Porous silicon advances in drug delivery and immunotherapy

PubMed Central

Savage, D; Liu, X; Curley, S; Ferrari, M; Serda, RE

2013-01-01

Biomedical applications of porous silicon include drug delivery, imaging, diagnostics and immunotherapy. This review summarizes new silicon particle fabrication techniques, dynamics of cellular transport, advances in the multistage vector approach to drug delivery, and the use of porous silicon as immune adjuvants. Recent findings support superior therapeutic efficacy of the multistage vector approach over single particle drug delivery systems in mouse models of ovarian and breast cancer. With respect to vaccine development, multivalent presentation of pathogen-associated molecular patterns on the particle surface creates powerful platforms for immunotherapy, with the porous matrix able to carry both antigens and immune modulators. PMID:23845260

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

PubMed

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

PubMed Central

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared. PMID:22163487

Mid-infrared integrated photonics on silicon: a perspective

NASA Astrophysics Data System (ADS)

Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

2017-12-01

The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale.

PubMed

Wu, Marcelo; Han, Zhanghua; Van, Vien

2010-05-24

Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.

Porous silicon advances in drug delivery and immunotherapy.

PubMed

Savage, David J; Liu, Xuewu; Curley, Steven A; Ferrari, Mauro; Serda, Rita E

2013-10-01

Biomedical applications of porous silicon include drug delivery, imaging, diagnostics and immunotherapy. This review summarizes new silicon particle fabrication techniques, dynamics of cellular transport, advances in the multistage vector approach to drug delivery, and the use of porous silicon as immune adjuvants. Recent findings support superior therapeutic efficacy of the multistage vector approach over single particle drug delivery systems in mouse models of ovarian and breast cancer. With respect to vaccine development, multivalent presentation of pathogen-associated molecular patterns on the particle surface creates powerful platforms for immunotherapy, with the porous matrix able to carry both antigens and immune modulators. Copyright © 2013 Elsevier Ltd. All rights reserved.

Integrated Microfluidic Gas Sensors for Water Monitoring

NASA Technical Reports Server (NTRS)

Zhu, L.; Sniadecki, N.; DeVoe, D. L.; Beamesderfer, M.; Semancik, S.; DeVoe, D. L.

2003-01-01

A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

Modification of porous silicon rugate filters through thiol-yne photochemistry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soeriyadi, Alexander H., E-mail: alexander.soeriyadi@unsw.edu.au; Zhu, Ying, E-mail: alexander.soeriyadi@unsw.edu.au; Gooding, J. Justin, E-mail: justin.gooding@unsw.edu.au

2014-02-24

Porous silicon (PSi) has a considerable potential as biosensor platform. In particular, the ability to modify the surface chemistry of porous silicon is of interest. Here we present a generic method to modify the surface of porous silicon through thiol-yne photochemistry initiated by a radical initiator. Firstly, a freshly etched porous silicon substrate is modified through thermal hydrosilylation with 1,8-nonadiyne to passivate the surface and introduce alkyne functionalities. The alkyne functional surface could then be further reacted with thiol species in the presence of a radical initiator and UV light. Functionalization of the PSi rugate filter is followed with opticalmore » reflectivity measurements as well as high resolution X-ray photoelectron spectroscopy (XPS)« less

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Lebrasseur, Eric; Okamoto, Yuki; Marty, Frédéfic; Setoguchi, Ryota; Yamada, Kentaro; Mori, Isao; Morishita, Satoshi; Imai, Yoshiaki; Hosaka, Kota; Hirakawa, Atsushi; Inoue, Shu; Kubota, Masanori; Denoual, Matthieu

2017-06-01

Since the 2000s, several countries have established micro- and nanofabrication platforms for the research and education community as national projects. By combining such platforms with VLSI multichip foundry services, various integrated devices, referred to as “CMOS-MEMS”, can be realized without constructing an entire cleanroom. In this paper, we summarize MEMS-last postprocess schemes for CMOS devices on a bulk silicon wafer as well as on a silicon-on-insulator (SOI) wafer using an open-access cleanroom of the Nanotechnology Platform of MEXT Japan. The integration devices presented in this article are free-standing structures and postprocess isolated LSI devices. Postprocess issues are identified with their solutions, such as the reactive ion etching (RIE) lag for dry release and the impact of the deep RIE (DRIE) postprocess on transistor characteristics. Integration with nonsilicon materials is proposed as one of the future directions.

Fabrication of a multifunctional nano-in-micro drug delivery platform by microfluidic templated encapsulation of porous silicon in polymer matrix.

PubMed

Zhang, Hongbo; Liu, Dongfei; Shahbazi, Mohammad-Ali; Mäkilä, Ermei; Herranz-Blanco, Bárbara; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

2014-07-09

A multifunctional nano-in-micro drug delivery platform is developed by conjugating the porous silicon nanoparticles with mucoadhesive polymers and subsequent encapsulation into a pH-responsive polymer using microfluidics. The multistage platform shows monodisperse size distribution and pH-responsive payload release, and the released nanoparticles are mucoadhesive. Moreover, this platform is capable of simultaneously loading and releasing multidrugs with distinct properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Micropatterned arrays of porous silicon: toward sensory biointerfaces.

PubMed

Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

2011-07-01

We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

Highly linear ring modulator from hybrid silicon and lithium niobate.

PubMed

Chen, Li; Chen, Jiahong; Nagy, Jonathan; Reano, Ronald M

2015-05-18

We present a highly linear ring modulator from the bonding of ion-sliced x-cut lithium niobate onto a silicon ring resonator. The third order intermodulation distortion spurious free dynamic range is measured to be 98.1 dB Hz(2/3) and 87.6 dB Hz(2/3) at 1 GHz and 10 GHz, respectively. The linearity is comparable to a reference lithium niobate Mach-Zehnder interferometer modulator operating at quadrature and over an order of magnitude greater than silicon ring modulators based on plasma dispersion effect. Compact modulators for analog optical links that exploit the second order susceptibility of lithium niobate on the silicon platform are envisioned.

Trimming of silicon ring resonator by electron beam induced compaction and strain.

PubMed

Schrauwen, J; Van Thourhout, D; Baets, R

2008-03-17

Silicon is becoming the preferable platform for future integrated components, mostly due to the mature and reliable fabrication capabilities of electronics industry. Nevertheless, even the most advanced fabrication technologies suffer from non-uniformity on wafer scale and on chip scale, causing variations in the critical dimensions of fabricated components. This is an important issue since photonic circuits, and especially cavities such as ring resonators, are extremely sensitive to these variations. In this paper we present a way to circumvent these problems by trimming using electron beam induced compaction of oxide in silicon on insulator. Volume compaction of the oxide cladding causes both changes in the refractive index and creates strain in the silicon lattice. We demonstrate a resonance wavelength red shift 4.91 nm in a silicon ring resonator.

Mid-infrared materials and devices on a Si platform for optical sensing

PubMed Central

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

PubMed

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

Silicon nanomaterials are an important class of nanomaterials with great potential for technologies including energy, catalysis, and biotechnology, because of their many unique properties, including biocompatibility, abundance, and unique electronic, optical, and mechanical properties, among others. Silicon nanomaterials are known to have little or no toxicity due to favorable biocompatibility of silicon, which is an important precondition for biological and biomedical applications. In addition, huge surface-to-volume ratios of silicon nanomaterials are responsible for their unique optical, mechanical, or electronic properties, which offer exciting opportunities for design of high-performance silicon-based functional nanoprobes, nanosensors, and nanoagents for biological analysis and detection and disease treatment. Moreover, silicon is the second most abundant element (after oxygen) on earth, providing plentiful and inexpensive resources for large-scale and low-cost preparation of silicon nanomaterials for practical applications. Because of these attractive traits, and in parallel with a growing interest in their design and synthesis, silicon nanomaterials are extensively investigated for wide-ranging applications, including energy, catalysis, optoelectronics, and biology. Among them, bioapplications of silicon nanomaterials are of particular interest. In the past decade, scientists have made an extensive effort to construct a silicon nanomaterials platform for various biological and biomedical applications, such as biosensors, bioimaging, and cancer treatment, as new and powerful tools for disease diagnosis and therapy. Nonetheless, there are few review articles covering these important and promising achievements to promote the awareness of development of silicon nanobiotechnology. In this Account, we summarize recent representative works to highlight the recent developments of silicon functional nanomaterials for a new, powerful platform for biological and biomedical applications, including biosensor, bioimaging, and cancer therapy. First, we show that the interesting photoluminescence properties (e.g., strong fluorescence and robust photostability) and excellent biocompatibility of silicon nanoparticles (SiNPs) are superbly suitable for direct and long-term visualization of biological systems. The strongly fluorescent SiNPs are highly effective for bioimaging applications, especially for long-term cellular labeling, cancer cell detection, and tumor imaging in vitro and in vivo with high sensitivity. Next, we discuss the utilization of silicon nanomaterials to construct high-performance biosensors, such as silicon-based field-effect transistors (FET) and surface-enhanced Raman scattering (SERS) sensors, which hold great promise for ultrasensitive and selective detection of biological species (e.g., DNA and protein). Then, we introduce recent exciting research findings on the applications of silicon nanomaterials for cancer therapy with encouraging therapeutic outcomes. Lastly, we highlight the major challenges and promises in this field, and the prospect of a new nanobiotechnology platform based on silicon nanomaterials.

Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications.

PubMed

Nguyen, Tuan-Khoa; Phan, Hoang-Phuong; Kamble, Harshad; Vadivelu, Raja; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Hold, Leonie; Nguyen, Nam-Trung; Dao, Dzung Viet

2017-12-06

Micromachined membranes are promising platforms for cell culture thanks to their miniaturization and integration capabilities. Possessing chemical inertness, biocompatibility, and integration, silicon carbide (SiC) membranes have attracted great interest toward biological applications. In this paper, we present the batch fabrication, mechanical characterizations, and cell culture demonstration of robust ultrathin epitaxial deposited SiC membranes. The as-fabricated ultrathin SiC membranes, with an ultrahigh aspect ratio (length/thickness) of up to 20 000, possess high a fracture strength up to 2.95 GPa and deformation up to 50 μm. A high optical transmittance of above 80% at visible wavelengths was obtained for 50 nm membranes. The as-fabricated membranes were experimentally demonstrated as an excellent substrate platform for bio-MEMS/NEMS cell culture with the cell viability rate of more than 92% after 72 h. The ultrathin SiC membrane is promising for in vitro observations/imaging of bio-objects with an extremely short optical access.

All silicon electrode photocapacitor for integrated energy storage and conversion.

PubMed

Cohn, Adam P; Erwin, William R; Share, Keith; Oakes, Landon; Westover, Andrew S; Carter, Rachel E; Bardhan, Rizia; Pint, Cary L

2015-04-08

We demonstrate a simple wafer-scale process by which an individual silicon wafer can be processed into a multifunctional platform where one side is adapted to replace platinum and enable triiodide reduction in a dye-sensitized solar cell and the other side provides on-board charge storage as an electrochemical supercapacitor. This builds upon electrochemical fabrication of dual-sided porous silicon and subsequent carbon surface passivation for silicon electrochemical stability. The utilization of this silicon multifunctional platform as a combined energy storage and conversion system yields a total device efficiency of 2.1%, where the high frequency discharge capability of the integrated supercapacitor gives promise for dynamic load-leveling operations to overcome current and voltage fluctuations during solar energy harvesting.

Biofunctionalization on alkylated silicon substrate surfaces via "click" chemistry.

PubMed

Qin, Guoting; Santos, Catherine; Zhang, Wen; Li, Yan; Kumar, Amit; Erasquin, Uriel J; Liu, Kai; Muradov, Pavel; Trautner, Barbara Wells; Cai, Chengzhi

2010-11-24

Biofunctionalization of silicon substrates is important to the development of silicon-based biosensors and devices. Compared to conventional organosiloxane films on silicon oxide intermediate layers, organic monolayers directly bound to the nonoxidized silicon substrates via Si-C bonds enhance the sensitivity of detection and the stability against hydrolytic cleavage. Such monolayers presenting a high density of terminal alkynyl groups for bioconjugation via copper-catalyzed azide-alkyne 1,3-dipolar cycloaddition (CuAAC, a "click" reaction) were reported. However, yields of the CuAAC reactions on these monolayer platforms were low. Also, the nonspecific adsorption of proteins on the resultant surfaces remained a major obstacle for many potential biological applications. Herein, we report a new type of "clickable" monolayers grown by selective, photoactivated surface hydrosilylation of α,ω-alkenynes, where the alkynyl terminal is protected with a trimethylgermanyl (TMG) group, on hydrogen-terminated silicon substrates. The TMG groups on the film are readily removed in aqueous solutions in the presence of Cu(I). Significantly, the degermanylation and the subsequent CuAAC reaction with various azides could be combined into a single step in good yields. Thus, oligo(ethylene glycol) (OEG) with an azido tag was attached to the TMG-alkyne surfaces, leading to OEG-terminated surfaces that reduced the nonspecific adsorption of protein (fibrinogen) by >98%. The CuAAC reaction could be performed in microarray format to generate arrays of mannose and biotin with varied densities on the protein-resistant OEG background. We also demonstrated that the monolayer platform could be functionalized with mannose for highly specific capturing of living targets (Escherichia coli expressing fimbriae) onto the silicon substrates.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Fiber laser platform for highest flexibility and reliability in industrial femtosecond micromachining: TruMicro Series 2000

NASA Astrophysics Data System (ADS)

Jansen, Florian; Kanal, Florian; Kahmann, Max; Tan, Chuong; Diekamp, Holger; Scelle, Raphael; Budnicki, Aleksander; Sutter, Dirk

2018-02-01

In this work we present an ultrafast laser system distinguished by its industry-ready reliability and its outstanding flexibility that allows for real-time process-inherent parameter. The robust system design and linear amplifier architecture make the all-fiber series TruMicro 2000 ideally suited for passive coupling to hollow-core delivery fibers. In addition to details on the laser system itself, various application examples are shown, including welding of different glasses and ablation of silicon carbide and silicon.

From Extraterrestrial to Terrestrial Applications

NASA Astrophysics Data System (ADS)

Strobl, G. F. X.; Laroche, G.; Rasch, K.-D.; Hey, G.

While working to improve transistors in the early 1950s, Bell scientists Gerald Pearson and Calvin Fuller invented the first silicon solar cell. In 1954 Bell Laboratories presented the first solar battery to the public. Despite some early applications on oil platforms, the astronomical price of the cells limited their use to space exploration. In 1958 Vanguard 1, the first satellite with solar cells aboard, went into orbit. As the space program advanced, silicon solar cells became the preferred power source for spacecraft.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

Polymer waveguides for electro-optical integration in data centers and high-performance computers.

PubMed

Dangel, Roger; Hofrichter, Jens; Horst, Folkert; Jubin, Daniel; La Porta, Antonio; Meier, Norbert; Soganci, Ibrahim Murat; Weiss, Jonas; Offrein, Bert Jan

2015-02-23

To satisfy the intra- and inter-system bandwidth requirements of future data centers and high-performance computers, low-cost low-power high-throughput optical interconnects will become a key enabling technology. To tightly integrate optics with the computing hardware, particularly in the context of CMOS-compatible silicon photonics, optical printed circuit boards using polymer waveguides are considered as a formidable platform. IBM Research has already demonstrated the essential silicon photonics and interconnection building blocks. A remaining challenge is electro-optical packaging, i.e., the connection of the silicon photonics chips with the system. In this paper, we present a new single-mode polymer waveguide technology and a scalable method for building the optical interface between silicon photonics chips and single-mode polymer waveguides.

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

PubMed

Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

2017-12-05

Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, William; Xiong, Chi; Khater, Marwan

Due to the high radiative forcing of methane, fugitive natural gas leaks pose a significant challenge to the near-term environmental viability of oil and gas extraction. Reducing the subsequent environmental impact requires cost-effective sensor nodes for reliable, rapid, and continuous identification of extraneous methane emissions. The efficacy of laser spectroscopy has been widely demonstrated in both environmental and medical applications due to its sensitivity and specificity to the target analyte. However, the present cost and the lack of manufacturing scalability of free-space optical systems can limit their viability for economical wide-area sensor networks in localized leak detection applications. In thismore » paper, we will review the development and performance of a cost-effective silicon photonic sensing platform. This platform uses silicon photonic waveguide and packaging integration technologies to enable on-chip evanescent field spectroscopy of methane.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.

PubMed

Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun

2017-09-22

The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.

Real-time monitoring of surface-initiated atom transfer radical polymerization using silicon photonic microring resonators: implications for combinatorial screening of polymer brush growth conditions.

PubMed

Limpoco, F Ted; Bailey, Ryan C

2011-09-28

We directly monitor in parallel and in real time the temporal profiles of polymer brushes simultaneously grown via multiple ATRP reaction conditions on a single substrate using arrays of silicon photonic microring resonators. In addition to probing relative polymerization rates, we show the ability to evaluate the dynamic properties of the in situ grown polymers. This presents a powerful new platform for studying modified interfaces that may allow for the combinatorial optimization of surface-initiated polymerization conditions.

Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

PubMed

Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

2017-04-03

We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

PubMed

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si₃N₄) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si₃N₄ and the LN-Si₃N₄ waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Kinetics of new thermal donors (NTDs) in CZ-silicon based on FTIR analysis

NASA Astrophysics Data System (ADS)

Singh, Rajeev; Singh, Shyam; Yadav, Bal Chandra

2018-05-01

Oxygen is quite friendly to silicon and is interstitially positioned well guarded by neighbouring silicon atoms on regular sites, provides mechanical strength to the silicon wafers and helps in internal gettering. Oxygen dimers are a fast diffusing species. Presence of trimers provides a wider platform for interconversion of dimer-trimer and V-O interaction. Oxygen atoms in isomeric positions really play a trick in the formation of TDD0 - TDD16. Other members of the donor species are likely due to the addition of dimers/trimers. FTIR analysis of boron-doped CZ-silicon annealed at 495 °C revealed a unique feature that the nature of 999 cm-1 absorption peak corresponding to TDD3 is contrary to 1107 cm-1 absorption peak corresponding to interstitial oxygen in silicon. Isothermal annealing at different temperatures also indicates slow disappearance of one donor species and emergence of other donor species. Thermal acceptors and recombination centers intrinsically present in the as grown silicon crystal and/or generated as a result of annealing do contribute to lower the donor concentration.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

PubMed

Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

2016-02-10

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Hyperpolarized Porous Silicon Nanoparticles: Potential Theragnostic Material for ²⁹Si Magnetic Resonance Imaging.

PubMed

Seo, Hyeonglim; Choi, Ikjang; Whiting, Nicholas; Hu, Jingzhe; Luu, Quy Son; Pudakalakatti, Shivanand; McCowan, Caitlin; Kim, Yaewon; Zacharias, Niki; Lee, Seunghyun; Bhattacharya, Pratip; Lee, Youngbok

2018-05-20

Porous silicon nanoparticles have recently garnered attention as potentially-promising biomedical platforms for drug delivery and medical diagnostics. Here, we demonstrate porous silicon nanoparticles as contrast agents for ²⁹Si magnetic resonance imaging. Size-controlled porous silicon nanoparticles were synthesized by magnesiothermic reduction of silica nanoparticles and were surface activated for further functionalization. Particles were hyperpolarized via dynamic nuclear polarization to enhance their ²⁹Si MR signals; the particles demonstrated long ²⁹Si spin-lattice relaxation (T₁) times (~ 25 mins), which suggests potential applicability for medical imaging. Furthermore, ²⁹Si hyperpolarization levels were sufficient to allow ²⁹Si MRI in phantoms. These results underscore the potential of porous silicon nanoparticles that, when combined with hyperpolarized magnetic resonance imaging, can be a powerful theragnostic deep tissue imaging platform to interrogate various biomolecular processes in vivo. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An organophosphonate strategy for functionalizing silicon photonic biosensors

PubMed Central

Shang, Jing; Cheng, Fang; Dubey, Manish; Kaplan, Justin M.; Rawal, Meghana; Jiang, Xi; Newburg, David S.; Sullivan, Philip A.; Andrade, Rodrigo B.; Ratner, Daniel M.

2012-01-01

Silicon photonic microring resonators have established their potential for label-free and low-cost biosensing applications. However, the long-term performance of this optical sensing platform requires robust surface modification and biofunctionalization. Herein, we demonstrate a conjugation strategy based on an organophosphonate surface coating and vinyl sulfone linker to biofunctionalize silicon resonators for biomolecular sensing. To validate this method, a series of glycans, including carbohydrates and glycoconjugates, were immobilized on divinyl sulfone (DVS)/organophosphonate-modified microrings and used to characterize carbohydrate-protein and norovirus particle interactions. This biofunctional platform was able to orthogonally detect multiple specific carbohydrate-protein interactions simultaneously. Additionally, the platform was capable of reproducible binding after multiple regenerations by high-salt, high-pH or low-pH solutions and after 1-month storage in ambient conditions. This remarkable stability and durability of the organophosphonate immobilization strategy will facilitate the application of silicon microring resonators in various sensing conditions, prolong their lifetime, and minimize the cost for storage and delivery; these characteristics are requisite for developing biosensors for point-of-care and distributed diagnostics and other biomedical applications. In addition, the platform demonstrated its ability to characterize carbohydrate-mediated host-virus interactions, providing a facile method for discovering new anti-viral agents to prevent infectious disease. PMID:22220731

Integration of carbon nanotubes in slot waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, Elena; Zhang, Weiwei; Hoang, Thi Hong Cam; Alonso-Ramos, Carlos; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Balestrieri, Matteo; Keita, Al-Saleh; Sarti, Francesco; Biccari, Francesco; Torrini, Ughetta; Vinattieri, Anna; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Gurioli, Massimo; Vivien, Laurent

2016-05-01

Demanding applications such as video streaming, social networking, or web search relay on a large network of data centres, interconnected through optical links. The ever-growing data rates and power consumption inside these data centres are pushing copper links close to their fundamental limits. Optical interconnects are being extensively studied with the purpose of solving these limitations. Among the different possible technology platforms, silicon photonics, due to its compatibility with the CMOS platform, has become one of the preferred solutions for the development of the future generation photonic interconnects. However, the on-chip integration of all photonic and optoelectronic building blocks (sources, modulators and detectors…) is very complex and is not cost-effective due to the various materials involved (Ge for detection, doped Si for modulators and III-V for lasing). Carbon nanotubes (CNTs) are nanomaterials of great interest in photonics thanks to their fundamental optical properties, including near-IR room-temperature foto- and electro- luminescence, Stark effect, Kerr effect and absorption. In consequence, CNTs have the ability to emit, modulate and detect light in the telecommunications wavelength range. Furthermore, they are being extensively developed for new nano-electronics applications. In this work, we propose to use CNTs as active material integrated into silicon photonics for the development of all optoelectronic devices. Here, we report on the development of new integration schemes to couple the light emission from CNTs into optical resonators implemented on the silicon-on-insulator and silicon-nitride-on-insulator platforms. A theoretical and experimental analysis of the light interaction of CNTs with micro-ring resonators based on strip and slot waveguides and slot photonic crystal heterostructure cavities were carried out.

Methane Trace-Gas Sensing Enabled by Silicon Photonic Integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, William

Fugitive methane leaks occurring during extraction at typical natural gas wells have an adverse environmental impact due to the methane’s large radiative forcing, in addition to reducing the producer’s overall efficiency and cost. Mitigation of these concerns can benefit from cost-effective sensor nodes, performing reliable, rapid and continuous tracking of methane emissions. The efficacy of laser spectroscopy has been widely demonstrated in both environmental and medical applications due to its sensitivity and specificity to the target analyte. However, the present cost and lack of manufacturing scalability of traditional free-space optical systems can limit their viability for deployment in economical wide-areamore » sensor networks. This presentation will review the development and performance of a cost-effective silicon photonic trace gas sensing platform that leverages silicon photonic waveguide and packaging technologies to perform on-chip evanescent field spectroscopy of methane.« less

A silicon central pattern generator controls locomotion in vivo.

PubMed

Vogelstein, R J; Tenore, F; Guevremont, L; Etienne-Cummings, R; Mushahwar, V K

2008-09-01

We present a neuromorphic silicon chip that emulates the activity of the biological spinal central pattern generator (CPG) and creates locomotor patterns to support walking. The chip implements ten integrate-and-fire silicon neurons and 190 programmable digital-to-analog converters that act as synapses. This architecture allows for each neuron to make synaptic connections to any of the other neurons as well as to any of eight external input signals and one tonic bias input. The chip's functionality is confirmed by a series of experiments in which it controls the motor output of a paralyzed animal in real-time and enables it to walk along a three-meter platform. The walking is controlled under closed-loop conditions with the aide of sensory feedback that is recorded from the animal's legs and fed into the silicon CPG. Although we and others have previously described biomimetic silicon locomotor control systems for robots, this is the first demonstration of a neuromorphic device that can replace some functions of the central nervous system in vivo.

Silicon quantum processor with robust long-distance qubit couplings.

PubMed

Tosi, Guilherme; Mohiyaddin, Fahd A; Schmitt, Vivien; Tenberg, Stefanie; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2017-09-06

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.

High Power Broadband Multispectral Source on a Hybrid Silicon Chip

DTIC Science & Technology

2017-03-14

insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are made to the 1.5-µm...silicon-on-nitride-on- insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are...optical bandwidth of the erbium-doped-fiber-amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on- insulator

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

5 × 5 cm2 silicon photonic crystal slabs on glass and plastic foil exhibiting broadband absorption and high-intensity near-fields

PubMed Central

Becker, C.; Wyss, P.; Eisenhauer, D.; Probst, J.; Preidel, V.; Hammerschmidt, M.; Burger, S.

2014-01-01

Crystalline silicon photonic crystal slabs are widely used in various photonics applications. So far, the commercial success of such structures is still limited owing to the lack of cost-effective fabrication processes enabling large nanopatterned areas (≫ 1 cm2). We present a simple method for producing crystalline silicon nanohole arrays of up to 5 × 5 cm2 size with lattice pitches between 600 and 1000 nm on glass and flexible plastic substrates. Exclusively up-scalable, fast fabrication processes are applied such as nanoimprint-lithography and silicon evaporation. The broadband light trapping efficiency of the arrays is among the best values reported for large-area experimental crystalline silicon nanostructures. Further, measured photonic crystal resonance modes are in good accordance with light scattering simulations predicting strong near-field intensity enhancements greater than 500. Hence, the large-area silicon nanohole arrays might become a promising platform for ultrathin solar cells on lightweight substrates, high-sensitive optical biosensors, and nonlinear optics. PMID:25073935

Optical MEMS platform for low-cost on-chip integration of planar light circuits and optical switching

NASA Astrophysics Data System (ADS)

German, Kristine A.; Kubby, Joel; Chen, Jingkuang; Diehl, James; Feinberg, Kathleen; Gulvin, Peter; Herko, Larry; Jia, Nancy; Lin, Pinyen; Liu, Xueyuan; Ma, Jun; Meyers, John; Nystrom, Peter; Wang, Yao Rong

2004-07-01

Xerox Corporation has developed a technology platform for on-chip integration of latching MEMS optical waveguide switches and Planar Light Circuit (PLC) components using a Silicon On Insulator (SOI) based process. To illustrate the current state of this new technology platform, working prototypes of a Reconfigurable Optical Add/Drop Multiplexer (ROADM) and a l-router will be presented along with details of the integrated latching MEMS optical switches. On-chip integration of optical switches and PLCs can greatly reduce the size, manufacturing cost and operating cost of multi-component optical equipment. It is anticipated that low-cost, low-overhead optical network products will accelerate the migration of functions and services from high-cost long-haul markets to price sensitive markets, including networks for metropolitan areas and fiber to the home. Compared to the more common silica-on-silicon PLC technology, the high index of refraction of silicon waveguides created in the SOI device layer enables miniaturization of optical components, thereby increasing yield and decreasing cost projections. The latching SOI MEMS switches feature moving waveguides, and are advantaged across multiple attributes relative to alternative switching technologies, such as thermal optical switches and polymer switches. The SOI process employed was jointly developed under the auspice of the NIST APT program in partnership with Coventor, Corning IntelliSense Corp., and MicroScan Systems to enable fabrication of a broad range of free space and guided wave MicroOptoElectroMechanical Systems (MOEMS).

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.

PubMed

Kim, Hyunseok; Lee, Wook-Jae; Farrell, Alan C; Balgarkashi, Akshay; Huffaker, Diana L

2017-09-13

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Luneburg lens in silicon photonics.

PubMed

Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

2011-03-14

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

LCoS-SLM technology based on Digital Electro-optics Platform and using in dynamic optics for application development

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Wang, Chen; Lyu, Bo-Han; Chu, Chen-Hsien

2017-08-01

Digital Electro-optics Platform is the main concept of Jasper Display Corp. (JDC) to develop various applications. These applications are based on our X-on-Silicon technologies, for example, X-on-Silicon technologies could be used on Liquid Crystal on Silicon (LCoS), Micro Light-Emitting Diode on Silicon (μLEDoS), Organic Light-Emitting Diode on Silicon (OLEDoS), and Cell on Silicon (CELLoS), etc. LCoS technology is applied to Spatial Light Modulator (SLM), Dynamic Optics, Wavelength Selective Switch (WSS), Holographic Display, Microscopy, Bio-tech, 3D Printing and Adaptive Optics, etc. In addition, μLEDoS technology is applied to Augmented Reality (AR), Head Up Display (HUD), Head-mounted Display (HMD), and Wearable Devices. Liquid Crystal on Silicon - Spatial Light Modulator (LCoSSLM) based on JDC's On-Silicon technology for both amplitude and phase modulation, have an expanding role in several optical areas where light control on a pixel-by-pixel basis is critical for optimum system performance. Combination of the advantage of hardware and software, we can establish a "dynamic optics" for the above applications or more. Moreover, through the software operation, we can control the light more flexible and easily as programmable light processor.

On-chip optical transduction scheme for graphene nano-electro-mechanical systems in silicon-photonic platform.

PubMed

Dash, Aneesh; Selvaraja, S K; Naik, A K

2018-02-15

We present a scheme for on-chip optical transduction of strain and displacement of graphene-based nano-electro-mechanical systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit configurations is presented: the Mach-Zehnder interferometer (MZI), the micro-ring resonator, and the ring-loaded MZI. An index sensing based technique using an MZI loaded with a ring resonator with a moderate Q-factor of 2400 can yield a sensitivity of 28  fm/Hz and 6.5×10 -6 %/Hz for displacement and strain, respectively. Though any phase-sensitive integrated-photonic device could be used for optical transduction, here we show that optimal sensitivity is achievable by combining resonance with phase sensitivity.

On-chip optical transduction scheme for graphene nano-electro-mechanical systems in silicon-photonic platform

NASA Astrophysics Data System (ADS)

Dash, Aneesh; Selvaraja, S. K.; Naik, A. K.

2018-02-01

We present a scheme for on-chip optical transduction of strain and displacement of Graphene-based Nano-Electro-Mechanical Systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit configurations is presented: Mach-Zehnder Interferometer(MZI), micro-ring resonator and ring-loaded MZI. An index-sensing based technique using a Mach-Zehnder Interferometer loaded with a ring resonator with a moderate Q-factor of 2400 can yield a sensitivity of 28 fm/sqrt(Hz), and 6.5E-6 %/sqrt(Hz) for displacement and strain respectively. Though any phase sensitive integrated photonic device could be used for optical transduction, here we show that optimal sensitivity is achievable by combining resonance with phase sensitivity.

A novel approach for osteocalcin detection by competitive ELISA using porous silicon as a substrate.

PubMed

Rahimi, Fereshteh; Mohammadnejad Arough, Javad; Yaghoobi, Mona; Davoodi, Hadi; Sepehri, Fatemeh; Amirabadizadeh, Masood

2017-11-01

In this study, porous silicon (PSi) was utilized instead of prevalent polystyrene platforms, and its capability in biomolecule screening was examined. Here, two types of porous structure, macroporous silicon (Macro-PSi) and mesoporous silicon (Meso-PSi), were produced on silicon wafers by electrochemical etching using different electrolytes. Moreover, both kinds of fresh and oxidized PSi samples were investigated. Next, osteocalcin as a biomarker of the bone formation process was used as a model biomarker, and the colorimetric detection was performed by competitive enzyme-linked immunosorbent assay (ELISA). Both Macro-PSi and Meso-PSi substrates in the oxidized state, specifically the Meso-porous structure, were reported to have higher surface area to volume ratio, more capacitance of surface-antigen interaction, and more ability to capture antigen in comparison with the prevalent platforms. Moreover, the optical density signal of osteocalcin detected by the ELISA technique was notably higher than the common platforms. Based on the findings of this study, PSi can potentially be used in the ELISA to achieve better results and consequently more sensitivity. A further asset of incorporating such a nanometer structure in the ELISA technique is that the system response to analyte concentration could be maintained by consuming lower monoclonal antibody (or antigen) and consequently reduces the cost of the experiment. © 2016 International Union of Biochemistry and Molecular Biology, Inc.

IIIV/Si Nanoscale Lasers and Their Integration with Silicon Photonics

NASA Astrophysics Data System (ADS)

Bondarenko, Olesya

The rapidly evolving global information infrastructure requires ever faster data transfer within computer networks and stations. Integrated chip scale photonics can pave the way to accelerated signal manipulation and boost bandwidth capacity of optical interconnects in a compact and ergonomic arrangement. A key building block for integrated photonic circuits is an on-chip laser. In this dissertation we explore ways to reduce the physical footprint of semiconductor lasers and make them suitable for high density integration on silicon, a standard material platform for today's integrated circuits. We demonstrated the first room temperature metalo-dielectric nanolaser, sub-wavelength in all three dimensions. Next, we demonstrated a nanolaser on silicon, showing the feasibility of its integration with this platform. We also designed and realized an ultracompact feedback laser with edge-emitting structure, amenable for in-plane coupling with a standard silicon waveguide. Finally, we discuss the challenges and propose solutions for improvement of the device performance and practicality.

Design, fabrication, and characterization of high density silicon photonic components

NASA Astrophysics Data System (ADS)

Jones, Adam Michael

Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve eciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satised by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which ecient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling on a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modied racetrack resonator is then presented enabling extraction of insertion loss data for highly ecient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.

Design Fabrication and Characterization of High Density Silicon Photonic Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, Adam

2015-02-01

Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve e ciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satis ed by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which e cient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling onmore » a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modi ed racetrack resonator is then presented enabling extraction of insertion loss data for highly e cient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.« less

Vertical silicon nanowires as a universal platform for delivering biomolecules into living cells

PubMed Central

Shalek, Alex K.; Robinson, Jacob T.; Karp, Ethan S.; Lee, Jin Seok; Ahn, Dae-Ro; Yoon, Myung-Han; Sutton, Amy; Jorgolli, Marsela; Gertner, Rona S.; Gujral, Taranjit S.; MacBeath, Gavin; Yang, Eun Gyeong; Park, Hongkun

2010-01-01

A generalized platform for introducing a diverse range of biomolecules into living cells in high-throughput could transform how complex cellular processes are probed and analyzed. Here, we demonstrate spatially localized, efficient, and universal delivery of biomolecules into immortalized and primary mammalian cells using surface-modified vertical silicon nanowires. The method relies on the ability of the silicon nanowires to penetrate a cell’s membrane and subsequently release surface-bound molecules directly into the cell’s cytosol, thus allowing highly efficient delivery of biomolecules without chemical modification or viral packaging. This modality enables one to assess the phenotypic consequences of introducing a broad range of biological effectors (DNAs, RNAs, peptides, proteins, and small molecules) into almost any cell type. We show that this platform can be used to guide neuronal progenitor growth with small molecules, knock down transcript levels by delivering siRNAs, inhibit apoptosis using peptides, and introduce targeted proteins to specific organelles. We further demonstrate codelivery of siRNAs and proteins on a single substrate in a microarray format, highlighting this technology’s potential as a robust, monolithic platform for high-throughput, miniaturized bioassays. PMID:20080678

Optimized optical devices for edge-coupling-enabled silicon photonics platform

NASA Astrophysics Data System (ADS)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (< 2dB per device), high speed (>= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio <= 25 dB) for optical communication applications. Ultra-low loss edge couplers, broadband directional couplers, high-extinction ratio polarization beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

PubMed

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scigaj, M.; Chao, C. H.; Gázquez, J.

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Porous Silicon Structures as Optical Gas Sensors.

PubMed

Levitsky, Igor A

2015-08-14

We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

PubMed

Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2015-10-05

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection.

PubMed

Chandrasekaran, Arvind; Acharya, Ashwin; You, Jian Liang; Soo, Kim Young; Packirisamy, Muthukumaran; Stiharu, Ion; Darveau, André

2007-09-11

The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS). In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

Initial investigation of SU-8 photopolymer as a material for noninvasive endothelial cell research platforms

NASA Astrophysics Data System (ADS)

Westwood, S.; Gojova, A.; Kuo, B.; Barakat, A. I.; Gray, B. L.

2007-01-01

This paper presents a preliminary investigation in the usage of the micromachining polymer material SU-8 for the noninvasive shape control and functional study of vascular endothelial cells (ECs). We previously demonstrated a silicon and glass modular microinstrument platform that allowed for a wide range of EC functional response studies. However, we expect SU-8 to provide a more versatile fabrication technology and material for microchannel fabrication and instrumentation, since it is capable of achieving high aspect ratio sensor-compatible structures through simple photopatterning. In this paper, SU-8 microchannels were fabricated on glass slides for straightforward optical observation and biological sampling. Channel widths ranged from 50 to 210 µm, length varied from 100 to 2100 µm, with depth fixed at 100 µm. We plated bovine aortic endothelial cells (BAECs) in the microchannels and used image analysis to determine cellular elongation and orientation. Similar to silicon-on-glass microchannels, the cells become more elongated and oriented along the microchannel axis as the width of the microchannel decreases. Initial results indicate cells plate in the microchannels and on the SU-8 surfaces, whereas in a previous silicon microchannel study, cells plated exclusively on the glass bottom surfaces. This finding has implications for SU-8 as a structural material for microchannel instrumentation.

Observation of soliton compression in silicon photonic crystals

PubMed Central

Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

2014-01-01

Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with <10 pJ energy. We demonstrate a ~1-ps free-carrier-induced pulse acceleration and show that picosecond input pulses are critical to these observations. These experiments are enabled by a dispersion-engineered slow-light photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

Silicon quantum processor with robust long-distance qubit couplings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tosi, Guilherme; Mohiyaddin, Fahd A.; Schmitt, Vivien

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowingmore » selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.« less

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

NASA Astrophysics Data System (ADS)

Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.; Boucaud, P.

2014-07-01

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ˜7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roland, I.; Zeng, Y.; Han, Z.

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

A Silicon-Chip Source of Bright Photon-Pair Comb

DTIC Science & Technology

2012-10-16

A silicon -chip source of bright photon-pair comb Wei C. Jiang,1, ∗ Xiyuan Lu,2, ∗ Jidong Zhang,3 Oskar Painter,4 and Qiang Lin1, 3, † 1Institute of...efficient monolithic photon-pair source for on-chip application. Here we report a device on the silicon -on-insulator platform that utilizes dramatic cavity...enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-purity photon pairs in a comb fashion, with an

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

PubMed

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Hybrid integration of carbon nanotubes in silicon photonic structures

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

DNA-Mediated Patterning of Single Quantum Dot Nanoarrays: A Reusable Platform for Single-Molecule Control

NASA Astrophysics Data System (ADS)

Huang, Da; Freeley, Mark; Palma, Matteo

2017-03-01

We present a facile strategy of general applicability for the assembly of individual nanoscale moieties in array configurations with single-molecule control. Combining the programming ability of DNA as a scaffolding material with a one-step lithographic process, we demonstrate the patterning of single quantum dots (QDs) at predefined locations on silicon and transparent glass surfaces: as proof of concept, clusters of either one, two, or three QDs were assembled in highly uniform arrays with a 60 nm interdot spacing within each cluster. Notably, the platform developed is reusable after a simple cleaning process and can be designed to exhibit different geometrical arrangements.

High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes

PubMed Central

Snyder, Jessica L.; Getpreecharsawas, Jirachai; Fang, David Z.; Gaborski, Thomas R.; Striemer, Christopher C.; Fauchet, Philippe M.; Borkholder, David A.; McGrath, James L.

2013-01-01

We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures. PMID:24167263

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter

PubMed Central

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-01

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment. PMID:28067332

Quantum electromechanics on silicon nitride nanomembranes

PubMed Central

Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

2016-01-01

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

NASA Astrophysics Data System (ADS)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter

NASA Astrophysics Data System (ADS)

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-01

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment.

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter.

PubMed

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-09

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment.

Quantum electromechanics on silicon nitride nanomembranes.

PubMed

Fink, J M; Kalaee, M; Pitanti, A; Norte, R; Heinzle, L; Davanço, M; Srinivasan, K; Painter, O

2016-08-03

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom-mechanical, optical and microwave-would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

CGS-MSFSS Project report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey-Collard, Patrick

2015-10-27

From January 2015 to July 2015, I was doing research at Sandia National Laboratories in Albuquerque, United States. My work there consisted of performing experimental measurements using Sandia’s unique silicon quantum computing platform. The project is about coupling donor spin quantum bits, or qubits, to quantum dots in a silicon nanostructure based on conventional microchip technology. During the project, I devised a new quantum state readout mechanism that allow better, longer lived measurement signals. The measurement (or readout) mechanism is key to any qubit architecture. Next, I was able to demonstrate a quantum manipulation of the two-electron spin states ofmore » the coupled donor and quantum dot system. This constitutes a breakthrough for donor spin qubits in silicon because it could enable larger systems consisting of many qubits. This project will lead to publications in scientific journals, presentations in international conferences, and generates exciting new opportunities for manipulating nature at the nanoscale.« less

Mechanics of finger-tip electronics

NASA Astrophysics Data System (ADS)

Su, Yewang; Li, Rui; Cheng, Huanyu; Ying, Ming; Bonifas, Andrew P.; Hwang, Keh-Chih; Rogers, John A.; Huang, Yonggang

2013-10-01

Tactile sensors and electrotactile stimulators can provide important links between humans and virtual environments, through the sensation of touch. Soft materials, such as low modulus silicones, are attractive as platforms and support matrices for arrays sensors and actuators that laminate directly onto the fingertips. Analytic models for the mechanics of three dimensional, form-fitting finger cuffs based on such designs are presented here, along with quantitative validation using the finite element method. The results indicate that the maximum strains in the silicone and the embedded devices are inversely proportional to the square root of radius of curvature of the cuff. These and other findings can be useful in formulating designs for these and related classes of body-worn, three dimensional devices.

Porous Silicon Structures as Optical Gas Sensors

PubMed Central

Levitsky, Igor A.

2015-01-01

We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed. PMID:26287199

Hybrid integration of VCSELs onto a silicon photonic platform for biosensing application

NASA Astrophysics Data System (ADS)

Lu, Huihui; Lee, Jun Su; Zhao, Yan; Cardile, Paolo; Daly, Aidan; Carroll, Lee; O'Brien, Peter

2017-02-01

This paper presents a technology of hybrid integration vertical cavity surface emitting lasers (VCSELs) directly on silicon photonics chip. By controlling the reflow of the solder balls used for electrical and mechanical bonding, the VCSELs were bonded at 10 degree to achieve the optimum angle-of-incidence to the planar grating coupler through vision based flip-chip techniques. The 1 dB discrepancy between optical loss values of flip-chip passive assembly and active alignment confirmed that the general purpose of the flip-chip design concept is achieved. This hybrid approach of integrating a miniaturized light source on chip opens the possibly of highly compact sensor system, which enable future portable and wearable diagnostics devices.

Electrically Conductive and Optically Active Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Liao, Lei; Li, Yujing; Zhang, Hua; Huang, Yu; Duan, Xiangfeng

2009-01-01

We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching of highly doped n-type silicon (100) wafers in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of the as-grown silicon nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell nanowires, and entirely nanoporous nanowires by controlling the hydrogen peroxide concentration in the etching solution. The porous silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer, and are electrically conductive and optically active with visible photoluminescence. The combination of electronic and optical properties in the porous silicon nanowires may provide a platform for the novel optoelectronic devices for energy harvesting, conversion and biosensing. PMID:19807130

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Enabling chip-scale trace gas sensing systems with silicon photonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, William

Tunable laser trace-gas spectroscopy has been effectively used in both environmental and medical applications, for its sensitivity and specificity. We’ll describe how contemporary silicon photonics manufacturing and assembly are leveraged for a cost-effective miniaturized spectroscopic sensor platform, and outline uses in fugitive methane emissions monitoring.

A Highly Sensitive Porous Silicon (P-Si)-Based Human Kallikrein 2 (hK2) Immunoassay Platform toward Accurate Diagnosis of Prostate Cancer

PubMed Central

Lee, Sang Wook; Hosokawa, Kazuo; Kim, Soyoun; Jeong, Ok Chan; Lilja, Hans; Laurell, Thomas; Maeda, Mizuo

2015-01-01

Levels of total human kallikrein 2 (hK2), a protein involved the pathology of prostate cancer (PCa), could be used as a biomarker to aid in the diagnosis of this disease. In this study, we report on a porous silicon antibody immunoassay platform for the detection of serum levels of total hK2. The surface of porous silicon has a 3-dimensional macro- and nanoporous structure, which offers a large binding capacity for capturing probe molecules. The tailored pore size of the porous silicon also allows efficient immobilization of antibodies by surface adsorption, and does not require chemical immobilization. Monoclonal hK2 capture antibody (6B7) was dispensed onto P-Si chip using a piezoelectric dispenser. In total 13 × 13 arrays (169 spots) were spotted on the chip with its single spot volume of 300 pL. For an optimization of capture antibody condition, we firstly performed an immunoassay of the P-Si microarray under a titration series of hK2 in pure buffer (PBS) at three different antibody densities (75, 100 and 145 µg/mL). The best performance of the microarray platform was seen at 100 µg/mL of the capture antibody concentration (LOD was 100 fg/mL). The platform then was subsequently evaluated for a titration series of serum-spiked hK2 samples. The developed platform utilizes only 15 µL of serum per test and the total assay time is about 3 h, including immobilization of the capture antibody. The detection limit of the hK2 assay was 100 fg/mL in PBS buffer and 1 pg/mL in serum with a dynamic range of 106 (10−4 to 102 ng/mL). PMID:26007739

A Highly Sensitive Porous Silicon (P-Si)-Based Human Kallikrein 2 (hK2) Immunoassay Platform toward Accurate Diagnosis of Prostate Cancer.

PubMed

Lee, Sang Wook; Hosokawa, Kazuo; Kim, Soyoun; Jeong, Ok Chan; Lilja, Hans; Laurell, Thomas; Maeda, Mizuo

2015-05-22

Levels of total human kallikrein 2 (hK2), a protein involved the pathology of prostate cancer (PCa), could be used as a biomarker to aid in the diagnosis of this disease. In this study, we report on a porous silicon antibody immunoassay platform for the detection of serum levels of total hK2. The surface of porous silicon has a 3-dimensional macro- and nanoporous structure, which offers a large binding capacity for capturing probe molecules. The tailored pore size of the porous silicon also allows efficient immobilization of antibodies by surface adsorption, and does not require chemical immobilization. Monoclonal hK2 capture antibody (6B7) was dispensed onto P-Si chip using a piezoelectric dispenser. In total 13 × 13 arrays (169 spots) were spotted on the chip with its single spot volume of 300 pL. For an optimization of capture antibody condition, we firstly performed an immunoassay of the P-Si microarray under a titration series of hK2 in pure buffer (PBS) at three different antibody densities (75, 100 and 145 µg/mL). The best performance of the microarray platform was seen at 100 µg/mL of the capture antibody concentration (LOD was 100 fg/mL). The platform then was subsequently evaluated for a titration series of serum-spiked hK2 samples. The developed platform utilizes only 15 µL of serum per test and the total assay time is about 3 h, including immobilization of the capture antibody. The detection limit of the hK2 assay was 100 fg/mL in PBS buffer and 1 pg/mL in serum with a dynamic range of 106 (10(-4) to 10(2) ng/mL).

Integrated optical sensors for 2D spatial chemical mapping (Conference Presentation)

NASA Astrophysics Data System (ADS)

Flores, Raquel; Janeiro, Ricardo; Viegas, Jaime

2017-02-01

Sensors based on optical waveguides for chemical sensing have attracted increasing interest over the last two decades, fueled by potential applications in commercial lab-on-a-chip devices for medical and food safety industries. Even though the early studies were oriented for single-point detection, progress in device size reduction and device yield afforded by photonics foundries have opened the opportunity for distributed dynamic chemical sensing at the microscale. This will allow researchers to follow the dynamics of chemical species in field of microbiology, and microchemistry, with a complementary method to current technologies based on microfluorescence and hyperspectral imaging. The study of the chemical dynamics at the surface of photoelectrodes in water splitting cells are a good candidate to benefit from such optochemical sensing devices that includes a photonic integrated circuit (PIC) with multiple sensors for real-time detection and spatial mapping of chemical species. In this project, we present experimental results on a prototype integrated optical system for chemical mapping based on the interaction of cascaded resonant optical devices, spatially covered with chemically sensitive polymers and plasmon-enhanced nanostructured metal/metal-oxide claddings offering chemical selectivity in a pixelated surface. In order to achieve a compact footprint, the prototype is based in a silicon photonics platform. A discussion on the relative merits of a photonic platform based on large bandgap metal oxides and nitrides which have higher chemical resistance than silicon is also presented.

Flexible Transient Optical Waveguides and Surface-Wave Biosensors Constructed from Monocrystalline Silicon.

PubMed

Bai, Wubin; Yang, Hongjun; Ma, Yinji; Chen, Hao; Shin, Jiho; Liu, Yonghao; Yang, Quansan; Kandela, Irawati; Liu, Zhonghe; Kang, Seung-Kyun; Wei, Chen; Haney, Chad R; Brikha, Anlil; Ge, Xiaochen; Feng, Xue; Braun, Paul V; Huang, Yonggang; Zhou, Weidong; Rogers, John A

2018-06-26

Optical technologies offer important capabilities in both biological research and clinical care. Recent interest is in implantable devices that provide intimate optical coupling to biological tissues for a finite time period and then undergo full bioresorption into benign products, thereby serving as temporary implants for diagnosis and/or therapy. The results presented here establish a silicon-based, bioresorbable photonic platform that relies on thin filaments of monocrystalline silicon encapsulated by polymers as flexible, transient optical waveguides for accurate light delivery and sensing at targeted sites in biological systems. Comprehensive studies of the mechanical and optical properties associated with bending and unfurling the waveguides from wafer-scale sources of materials establish general guidelines in fabrication and design. Monitoring biochemical species such as glucose and tracking physiological parameters such as oxygen saturation using near-infrared spectroscopic methods demonstrate modes of utility in biomedicine. These concepts provide versatile capabilities in biomedical diagnosis, therapy, deep-tissue imaging, and surgery, and suggest a broad range of opportunities for silicon photonics in bioresorbable technologies. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thiolene and SIFEL-based Microfluidic Platforms for Liquid-Liquid Extraction

PubMed Central

Goyal, Sachit; Desai, Amit V.; Lewis, Robert W.; Ranganathan, David R.; Li, Hairong; Zeng, Dexing; Reichert, David E.; Kenis, Paul J.A.

2014-01-01

Microfluidic platforms provide several advantages for liquid-liquid extraction (LLE) processes over conventional methods, for example with respect to lower consumption of solvents and enhanced extraction efficiencies due to the inherent shorter diffusional distances. Here, we report the development of polymer-based parallel-flow microfluidic platforms for LLE. To date, parallel-flow microfluidic platforms have predominantly been made out of silicon or glass due to their compatibility with most organic solvents used for LLE. Fabrication of silicon and glass-based LLE platforms typically requires extensive use of photolithography, plasma or laser-based etching, high temperature (anodic) bonding, and/or wet etching with KOH or HF solutions. In contrast, polymeric microfluidic platforms can be fabricated using less involved processes, typically photolithography in combination with replica molding, hot embossing, and/or bonding at much lower temperatures. Here we report the fabrication and testing of microfluidic LLE platforms comprised of thiolene or a perfluoropolyether-based material, SIFEL, where the choice of materials was mainly guided by the need for solvent compatibility and fabrication amenability. Suitable designs for polymer-based LLE platforms that maximize extraction efficiencies within the constraints of the fabrication methods and feasible operational conditions were obtained using analytical modeling. To optimize the performance of the polymer-based LLE platforms, we systematically studied the effect of surface functionalization and of microstructures on the stability of the liquid-liquid interface and on the ability to separate the phases. As demonstrative examples, we report (i) a thiolene-based platform to determine the lipophilicity of caffeine, and (ii) a SIFEL-based platform to extract radioactive copper from an acidic aqueous solution. PMID:25246730

Silicon nanostructures for cancer diagnosis and therapy.

PubMed

Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

2015-01-01

The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

Design analysis of doped-silicon surface plasmon resonance immunosensors in mid-infrared range.

PubMed

DiPippo, William; Lee, Bong Jae; Park, Keunhan

2010-08-30

This paper reports the design analysis of a microfabricatable mid-infrared (mid-IR) surface plasmon resonance (SPR) sensor platform. The proposed platform has periodic heavily doped profiles implanted into intrinsic silicon and a thin gold layer deposited on top, making a physically flat grating SPR coupler. A rigorous coupled-wave analysis was conducted to prove the design feasibility, characterize the sensor's performance, and determine geometric parameters of the heavily doped profiles. Finite element analysis (FEA) was also employed to compute the electromagnetic field distributions at the plasmon resonance. Obtained results reveal that the proposed structure can excite the SPR on the normal incidence of mid-IR light, resulting in a large probing depth that will facilitate the study of larger analytes. Furthermore, the whole structure can be microfabricated with well-established batch protocols, providing tunability in the SPR excitation wavelength for specific biosensing needs with a low manufacturing cost. When the SPR sensor is to be used in a Fourier-transform infrared (FTIR) spectroscopy platform, its detection sensitivity and limit of detection are estimated to be 3022 nm/RIU and ~70 pg/mm(2), respectively, at a sample layer thickness of 100 nm. The design analysis performed in the present study will allow the fabrication of a tunable, disposable mid-IR SPR sensor that combines advantages of conventional prism and metallic grating SPR sensors.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

A fluid collection system for dermal wounds in clinical investigations

PubMed Central

Klopfer, Michael; Li, G.-P.; Widgerow, Alan; Bachman, Mark

2016-01-01

In this work, we demonstrate the use of a thin, self adherent, and clinically durable patch device that can collect fluid from a wound site for analysis. This device is manufactured from laminated silicone layers using a novel all-silicone double-molding process. In vitro studies for flow and delivery were followed by a clinical demonstration for exudate collection efficiency from a clinically presented partial thickness burn. The demonstrated utility of this device lends itself for use as a research implement used to clinically sample wound exudate for analysis. This device can serve as a platform for future integration of wearable technology into wound monitoring and care. The demonstrated fabrication method can be used for devices requiring thin membrane construction. PMID:27051470

High-speed polarization-encoded quantum key distribution based on silicon photonic integrated devices

NASA Astrophysics Data System (ADS)

Bunandar, Darius; Urayama, Junji; Boynton, Nicholas; Martinez, Nicholas; Derose, Christopher; Lentine, Anthony; Davids, Paul; Camacho, Ryan; Wong, Franco; Englund, Dirk

We present a compact polarization-encoded quantum key distribution (QKD) transmitter near a 1550-nm wavelength implemented on a CMOS-compatible silicon-on-insulator photonics platform. The transmitter generates arbitrary polarization qubits at gigahertz bandwidth with an extinction ratio better than 30 dB using high-speed carrier-depletion phase modulators. We demonstrate the performance of this device by generating secret keys at a rate of 1 Mbps in a complete QKD field test. Our work shows the potential of using advanced photonic integrated circuits to enable high-speed quantum-secure communications. This work was supported by the SECANT QKD Grand Challenge, the Samsung Global Research Outreach Program, and the Air Force Office of Scientific Research.

Experimental demonstration of two-dimensional hybrid waveguide-integrated plasmonic crystals on silicon-on-insulator platform

NASA Astrophysics Data System (ADS)

Ren, Guanghui; Yudistira, Didit; Nguyen, Thach G.; Khodasevych, Iryna; Schoenhardt, Steffen; Berean, Kyle J.; Hamm, Joachim M.; Hess, Ortwin; Mitchell, Arnan

2017-07-01

Nanoscale plasmonic structures can offer unique functionality due to extreme sub-wavelength optical confinement, but the realization of complex plasmonic circuits is hampered by high propagation losses. Hybrid approaches can potentially overcome this limitation, but only few practical approaches based on either single or few element arrays of nanoantennas on dielectric nanowire have been experimentally demonstrated. In this paper, we demonstrate a two dimensional hybrid photonic plasmonic crystal interfaced with a standard silicon photonic platform. Off resonance, we observe low loss propagation through our structure, while on resonance we observe strong propagation suppression and intense concentration of light into a dense lattice of nanoscale hot-spots on the surface providing clear evidence of a hybrid photonic plasmonic crystal bandgap. This fully integrated approach is compatible with established silicon-on-insulator (SOI) fabrication techniques and constitutes a significant step toward harnessing plasmonic functionality within SOI photonic circuits.

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

PubMed Central

Ooi, K. J. A.; Ng, D. K. T.; Wang, T.; Chee, A. K. L.; Ng, S. K.; Wang, Q.; Ang, L. K.; Agarwal, A. M.; Kimerling, L. C.; Tan, D. T. H.

2017-01-01

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform. PMID:28051064

Ultra-large nonlinear parameter in graphene-silicon waveguide structures.

PubMed

Donnelly, Christine; Tan, Dawn T H

2014-09-22

Mono-layer graphene integrated with optical waveguides is studied for the purpose of maximizing E-field interaction with the graphene layer, for the generation of ultra-large nonlinear parameters. It is shown that the common approach used to minimize the waveguide effective modal area does not accurately predict the configuration with the maximum nonlinear parameter. Both photonic and plasmonic waveguide configurations and graphene integration techniques realizable with today's fabrication tools are studied. Importantly, nonlinear parameters exceeding 10(4) W(-1)/m, two orders of magnitude larger than that in silicon on insulator waveguides without graphene, are obtained for the quasi-TE mode in silicon waveguides incorporating mono-layer graphene in the evanescent part of the optical field. Dielectric loaded surface plasmon polariton waveguides incorporating mono-layer graphene are observed to generate nonlinear parameters as large as 10(5) W(-1)/m, three orders of magnitude larger than that in silicon on insulator waveguides without graphene. The ultra-large nonlinear parameters make such waveguides promising platforms for nonlinear integrated optics at ultra-low powers, and for previously unobserved nonlinear optical effects to be studied in a waveguide platform.

Multiplexed evaluation of capture agent binding kinetics using arrays of silicon photonic microring resonators.

PubMed

Byeon, Ji-Yeon; Bailey, Ryan C

2011-09-07

High affinity capture agents recognizing biomolecular targets are essential in the performance of many proteomic detection methods. Herein, we report the application of a label-free silicon photonic biomolecular analysis platform for simultaneously determining kinetic association and dissociation constants for two representative protein capture agents: a thrombin-binding DNA aptamer and an anti-thrombin monoclonal antibody. The scalability and inherent multiplexing capability of the technology make it an attractive platform for simultaneously evaluating the binding characteristics of multiple capture agents recognizing the same target antigen, and thus a tool complementary to emerging high-throughput capture agent generation strategies.

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

DAPHNE silicon photonics technological platform for research and development on WDM applications

NASA Astrophysics Data System (ADS)

Baudot, Charles; Fincato, Antonio; Fowler, Daivid; Perez-Galacho, Diego; Souhaité, Aurélie; Messaoudène, Sonia; Blanc, Romuald; Richard, Claire; Planchot, Jonathan; De-Buttet, Come; Orlando, Bastien; Gays, Fabien; Mezzomo, Cécilia; Bernard, Emilie; Marris-Morini, Delphine; Vivien, Laurent; Kopp, Christophe; Boeuf, Frédéric

2016-05-01

A new technological platform aimed at making prototypes and feasibility studies has been setup at STMicroelectronics using 300mm wafer foundry facilities. The technology, called DAPHNE (Datacom Advanced PHotonic Nanoscale Environment), is devoted at developing and evaluating new devices and sub-systems in particular for wavelength division multiplexing (WDM) applications and ring resonator based applications. Developed in the course of PLAT4MFP7 European project, DAPHNE is a flexible platform that fits perfectly R&D needs. The fabrication flow enables the processing of photonic integrated circuits using a silicon-on-insulator (SOI) of 300nm, partial etches of 150nm and 50nm and a total silicon etching. Consequently, two varieties of rib waveguides and one strip waveguide can be fabricated simultaneously with auto-alignment properties. The process variability on the 150nm partially etched silicon and the thin 50nm slab region are both less than 6 nm. Using a variety of different implantation configurations and a back-end of line of 5 metal layers, active devices are fabricated both in germanium and silicon. An available far back-end of line process consists of making 20 μm diameter copper posts on top of the electrical pads so that an electronic integrated circuit can be bonded on top the photonic die by 3D integration. Besides having those fabrication process options, DAPHNE is equipped with a library of standard cells for optical routing and multiplexing. Moreover, typical Mach-Zehnder modulators based on silicon pn junctions are also available for optical signal modulation. To achieve signal detection, germanium photodetectors also exist as standard cells. The measured single-mode propagation losses are 3.5 dB/cm for strip, 3.7 dB/cm for deep-rib (50nm slab) and 1.4 dB/cm for standard rib (150nm slab) waveguides. Transition tapers between different waveguide structures are as low as 0.006 dB.

Development of an Automated Microfluidic Reaction Platform for Multidimensional Screening: Reaction Discovery Employing Bicyclo[3.2.1]octanoid Scaffolds

PubMed Central

Goodell, John R.; McMullen, Jonathan P.; Zaborenko, Nikolay; Maloney, Jason R.; Ho, Chuan-Xing; Jensen, Klavs F.; Porco, John A.

2010-01-01

An automated, silicon-based microreactor system has been developed for rapid, low-volume, multidimensional reaction screening. Use of the microfluidic platform to identify transformations of densely functionalized bicyclo[3.2.1]octanoid scaffolds will be described. PMID:20560568

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

PubMed

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors.

PubMed

Fahad, Hossain Mohammad; Shiraki, Hiroshi; Amani, Matin; Zhang, Chuchu; Hebbar, Vivek Srinivas; Gao, Wei; Ota, Hiroki; Hettick, Mark; Kiriya, Daisuke; Chen, Yu-Ze; Chueh, Yu-Lun; Javey, Ali

2017-03-01

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H 2 S, H 2 , and NO 2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

PubMed Central

Fahad, Hossain Mohammad; Shiraki, Hiroshi; Amani, Matin; Zhang, Chuchu; Hebbar, Vivek Srinivas; Gao, Wei; Ota, Hiroki; Hettick, Mark; Kiriya, Daisuke; Chen, Yu-Ze; Chueh, Yu-Lun; Javey, Ali

2017-01-01

There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H2S, H2, and NO2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors. PMID:28378017

Linewidth Narrowing and Purcell Enhancement in Photonic Crystal Cavities on an Er-Doped Silicon Nitride Platform

DTIC Science & Technology

2010-02-01

Low noise superconducting single photon detectors on silicon,” Appl. Phys. Lett. 93, 131101 (2008). 20. M. T. Tanner, C. M. Natarajan, V. K... wavelength sensitivity in NbTiN superconducting nanowire single-photon detectors fabricated on oxidized silicon substrates,” Proceedings of Single...cavity resonance wavelength and Q-factor for the PC cavity are shown in Figure 3. The data are taken both at low (0.050 mW) pump power and high (30 mW

Advances in microfluidic devices made from thermoplastics used in cell biology and analyses.

PubMed

Gencturk, Elif; Mutlu, Senol; Ulgen, Kutlu O

2017-09-01

Silicon and glass were the main fabrication materials of microfluidic devices, however, plastics are on the rise in the past few years. Thermoplastic materials have recently been used to fabricate microfluidic platforms to perform experiments on cellular studies or environmental monitoring, with low cost disposable devices. This review describes the present state of the development and applications of microfluidic systems used in cell biology and analyses since the year 2000. Cultivation, separation/isolation, detection and analysis, and reaction studies are extensively discussed, considering only microorganisms (bacteria, yeast, fungi, zebra fish, etc.) and mammalian cell related studies in the microfluidic platforms. The advantages/disadvantages, fabrication methods, dimensions, and the purpose of creating the desired system are explained in detail. An important conclusion of this review is that these microfluidic platforms are still open for research and development, and solutions need to be found for each case separately.

Retention in porous layer pillar array planar separation platforms

DOE PAGES

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.; ...

2016-08-11

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less

Retention in porous layer pillar array planar separation platforms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less

Thermal and Power Challenges in High Performance Computing Systems

NASA Astrophysics Data System (ADS)

Natarajan, Venkat; Deshpande, Anand; Solanki, Sudarshan; Chandrasekhar, Arun

2009-05-01

This paper provides an overview of the thermal and power challenges in emerging high performance computing platforms. The advent of new sophisticated applications in highly diverse areas such as health, education, finance, entertainment, etc. is driving the platform and device requirements for future systems. The key ingredients of future platforms are vertically integrated (3D) die-stacked devices which provide the required performance characteristics with the associated form factor advantages. Two of the major challenges to the design of through silicon via (TSV) based 3D stacked technologies are (i) effective thermal management and (ii) efficient power delivery mechanisms. Some of the key challenges that are articulated in this paper include hot-spot superposition and intensification in a 3D stack, design/optimization of thermal through silicon vias (TTSVs), non-uniform power loading of multi-die stacks, efficient on-chip power delivery, minimization of electrical hotspots etc.

Interferometer immunosensor based on porous silicon for determining alpha-fetoprotein

NASA Astrophysics Data System (ADS)

Lv, Xiaoyi; Jiang, Jing; Lv, Guodong; Mo, Jiaqing; Jia, Zhenhong

2016-10-01

An increased level of alpha-fetoprotein ( AFP) in the blood may be a sign of liver cancer. Porous silicon based optical microcavities structure is prepared as a label-free immunosensor platform for detecting AFP. After the antigen-antibody reaction, it is monitored that the red shift of the reflection spectrum of the immunosensor increases

High frequency acoustic on-chip integration for particle characterization and manipulation in microfluidics

NASA Astrophysics Data System (ADS)

Li, Sizhe; Carlier, Julien; Toubal, Malika; Liu, Huiqin; Campistron, Pierre; Callens, Dorothée; Nassar, Georges; Nongaillard, Bertrand; Guo, Shishang

2017-10-01

This letter presents a microfluidic device that integrates high frequency (650 MHz) bulk acoustic waves for the realization of particle handling on-chip. The core structure of the microfluidic chip is made up of a confocal lens, a vertical reflection wall, and a ZnO film transducer coupled with a silicon substrate for exciting acoustic beams. The excited acoustic waves propagate in bulk silicon and are then guided by a 45° silicon mirror into the suspensions in the microchannel; afterwards, the acoustic energy is focused on particles by the confocal lens and reflected by a reflection wall. Parts of the reflected acoustic energy backtrack into the transducer, and acoustic attenuation measurements are characterized for particle detection. Meanwhile, a strong acoustic streaming phenomenon can be seen around the reflection wall, which is used to implement particle manipulation. This platform opens a frontier for on-chip integration of high sensitivity acoustic characterization and localized acoustic manipulation in microfluidics.

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

PubMed Central

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-01-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices. PMID:28406177

Widely bandwidth-tunable silicon filter with an unlimited free-spectral range.

PubMed

St-Yves, Jonathan; Bahrami, Hadi; Jean, Philippe; LaRochelle, Sophie; Shi, Wei

2015-12-01

Next-generation high-capacity optical networks require flexible allocation of spectrum resources, for which low-cost optical filters with an ultra-wide bandwidth tunability beyond 100 GHz are desired. We demonstrate an integrated band-pass filter with the bandwidth continuously tuned across 670 GHz (117-788 GHz) which, to the best of our knowledge, is the widest tuning span ever demonstrated on a silicon chip. The filter also features simultaneous wavelength tuning and an unlimited free spectral range. We measured an out-of-band contrast of up to 55 dB, low in-band ripples of less than 0.3 dB, and in-band group delay variation of less than 8 ps. This result was achieved using cascaded Bragg-grating-assisted contra-directional couplers and micro-heaters on the 220 nm silicon-on-insulator platform with a very compact footprint of less than 7000  μm2. Another design with the bandwidth continuously tunable from 50 GHz to 1 THz is also presented.

Nanomechanical silicon resonators with intrinsic tunable gain and sub-nW power consumption.

PubMed

Bartsch, Sebastian T; Lovera, Andrea; Grogg, Daniel; Ionescu, Adrian M

2012-01-24

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-insulator platform for building NEM oscillators in which fin field effect transistors (FinFETs) are integrated into nanomechanical silicon resonators. We demonstrate transistor amplification and signal mixing, coupled with mechanical motion at very high frequencies (25-80 MHz). By operating the transistor in the subthreshold region, the power consumption of resonators can be reduced to record-low nW levels, opening the way for the parallel operation of hundreds of thousands of NEM oscillators. The electromechanical charge modulation due to the field effect in a resonant transistor body constitutes a scalable nanomechanical motion detection all-on-chip and at room temperature. The new class of tunable NEMS represents a major step toward their integration in resonator arrays for applications in sensing and signal processing. © 2011 American Chemical Society

High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Cheben, Pavel; Schmid, Jens H; Wang, Shurui; Xu, Dan-Xia; Lapointe, Jean; Janz, Siegfried; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, J Gonzalo; Molina-Fernández, Iñigo; Fédéli, Jean-Marc; Vivien, Laurent; Dado, Milan

2015-09-15

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Silicon Valley as an Early Adopter for On-Demand Civil VTOL Operations

NASA Technical Reports Server (NTRS)

Antcliff, Kevin R.; Moore, Mark D.; Goodrich, Kenneth H.

2016-01-01

With high incomes, long commutes, severe ground geographic constraints, severe highway congestion during peak commute times, high housing costs, and near perfect year-round weather, the Silicon Valley is positioned to be an excellent early adopter market for emerging aviation On-Demand Mobility transportation solutions. Prior efforts have attempted to use existing aviation platforms (helicopters or General Aviation aircraft) with existing infrastructure solutions, or only investigated new vehicle platforms without understanding how to incorporate new vehicle types into existing built-up communities. Research has been performed with the objective of minimizing door-to-door time for "Hyper Commuters" (frequent, long-distance commuters) in the Silicon Valley through the development of new helipad infrastructure for ultra-low noise Vertical Takeoff and Landing (VTOL) aircraft. Current travel times for chosen city-pairs across urban and suburban commutes are compared to future mobility concepts that provide significantly higher utilization and productivity to yield competitive operating costs compared to existing transportation choices. Helipads are introduced near current modes of transportation and infrastructure for ease-of-access, and maximizing proximity. Strategies for both private and public infrastructure development are presented that require no new land purchase while minimizing community noise exposure. New VTOL concepts are introduced with cruise speeds of 200 mph, which yield a greater than three times improvement in overall door-to-door time when compared to current automobiles, and in some cases, improvements of up to 6 times lower trip times.

Silicon-nanomembrane-based photonic crystal nanostructures for chip-integrated open sensor systems

NASA Astrophysics Data System (ADS)

Chakravarty, Swapnajit; Lai, Wei-Cheng; Zou, Yi; Lin, Cheyun; Wang, Xiaolong; Chen, Ray T.

2011-11-01

We experimentally demonstrate two devices on the photonic crystal platform for chip-integrated optical absorption spectroscopy and chip-integrated biomolecular microarray assays. Infrared optical absorption spectroscopy and biomolecular assays based on conjugate-specific binding principles represent two dominant sensing mechanisms for a wide spectrum of applications in environmental pollution sensing in air and water, chem-bio agents and explosives detection for national security, microbial contamination sensing in food and beverages to name a few. The easy scalability of photonic crystal devices to any wavelength ensures that the sensing principles hold across a wide electromagnetic spectrum. Silicon, the workhorse of the electronics industry, is an ideal platform for the above optical sensing applications.

Neuromorphic photonic networks using silicon photonic weight banks.

PubMed

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

Toward Intelligent Synthetic Neural Circuits: Directing and Accelerating Neuron Cell Growth by Self-Rolled-Up Silicon Nitride Microtube Array

PubMed Central

2015-01-01

In neural interface platforms, cultures are often carried out on a flat, open, rigid, and opaque substrate, posing challenges to reflecting the native microenvironment of the brain and precise engagement with neurons. Here we present a neuron cell culturing platform that consists of arrays of ordered microtubes (2.7–4.4 μm in diameter), formed by strain-induced self-rolled-up nanomembrane (s-RUM) technology using ultrathin (<40 nm) silicon nitride (SiNx) film on transparent substrates. These microtubes demonstrated robust physical confinement and unprecedented guidance effect toward outgrowth of primary cortical neurons, with a coaxially confined configuration resembling that of myelin sheaths. The dynamic neural growth inside the microtube, evaluated with continuous live-cell imaging, showed a marked increase (20×) of the growth rate inside the microtube compared to regions outside the microtubes. We attribute the dramatic accelerating effect and precise guiding of the microtube array to three-dimensional (3D) adhesion and electrostatic interaction with the SiNx microtubes, respectively. This work has clear implications toward building intelligent synthetic neural circuits by arranging the size, site, and patterns of the microtube array, for potential treatment of neurological disorders. PMID:25329686

High ferroelectric polarization in c-oriented BaTiO 3 epitaxial thin films on SrTiO 3/Si(001)

DOE PAGES

Scigaj, M.; Chao, C. H.; Gázquez, J.; ...

2016-09-21

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect

NASA Astrophysics Data System (ADS)

Claps, Ricardo; Dimitropoulos, Dimitrios; Raghunathan, Varun; Fathpour, Sasan; Jalali, Bahram; Jusserand, Bernard

2007-02-01

The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

DOE PAGES

Wojciechowski, Kenneth E.; Baker, Michael S.; Clews, Peggy J.; ...

2015-06-24

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitrymore » and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.« less

Large-scale quantum photonic circuits in silicon

NASA Astrophysics Data System (ADS)

Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

2016-08-01

Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

A monolithically integrated polarization entangled photon pair source on a silicon chip

PubMed Central

Matsuda, Nobuyuki; Le Jeannic, Hanna; Fukuda, Hiroshi; Tsuchizawa, Tai; Munro, William John; Shimizu, Kaoru; Yamada, Koji; Tokura, Yasuhiro; Takesue, Hiroki

2012-01-01

Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip. PMID:23150781

Exploiting metamaterials, plasmonics and nanoantennas concepts in silicon photonics

NASA Astrophysics Data System (ADS)

Rodríguez-Fortuño, Francisco J.; Espinosa-Soria, Alba; Martínez, Alejandro

2016-12-01

The interaction of light with subwavelength metallic nano-structures is at the heart of different current scientific hot topics, namely plasmonics, metamaterials and nanoantennas. Research in these disciplines during the last decade has given rise to new, powerful concepts providing an unprecedented degree of control over light manipulation at the nanoscale. However, only recently have these concepts been used to increase the capabilities of light processing in current photonic integrated circuits (PICs), which traditionally rely only on dielectric materials with element sizes larger than the light wavelength. Amongst the different PIC platforms, silicon photonics is expected to become mainstream, since manufacturing using well-established CMOS processes enables the mass production of low-cost PICs. In this review we discuss the benefits of introducing recent concepts arisen from the fields of metamaterials, plasmonics and nanoantennas into a silicon photonics integrated platform. We review existing works in this direction and discuss how this hybrid approach can lead to the improvement of current PICs enabling novel and disruptive applications in photonics.

Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide.

PubMed

Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

2016-06-15

We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

PubMed

Tang, Yongbo; Chen, Hui-Wen; Jain, Siddharth; Peters, Jonathan D; Westergren, Urban; Bowers, John E

2011-03-28

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Comparison of scientific computing platforms for MCNP4A Monte Carlo calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, J.S.; Brockhoff, R.C.

1994-04-01

The performance of seven computer platforms is evaluated with the widely used and internationally available MCNP4A Monte Carlo radiation transport code. All results are reproducible and are presented in such a way as to enable comparison with computer platforms not in the study. The authors observed that the HP/9000-735 workstation runs MCNP 50% faster than the Cray YMP 8/64. Compared with the Cray YMP 8/64, the IBM RS/6000-560 is 68% as fast, the Sun Sparc10 is 66% as fast, the Silicon Graphics ONYX is 90% as fast, the Gateway 2000 model 4DX2-66V personal computer is 27% as fast, and themore » Sun Sparc2 is 24% as fast. In addition to comparing the timing performance of the seven platforms, the authors observe that changes in compilers and software over the past 2 yr have resulted in only modest performance improvements, hardware improvements have enhanced performance by less than a factor of [approximately]3, timing studies are very problem dependent, MCNP4Q runs about as fast as MCNP4.« less

Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications

NASA Astrophysics Data System (ADS)

Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

2015-08-01

Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02384j

Reconfigurable Cellular Photonic Crystal Arrays (RCPA)

DTIC Science & Technology

2013-03-01

signal processing based on reconfigurable integrated optics devices. This technology has the potential to revolutionize the design circle of optical...Accomplishments III.A. Design and fabrication of an accumulation-mode modulator Figure 1(a) shows the schematic of a compact resonator on the double-Si... integration of silicon nitride on silicon-on-insulator platform to enhance the arsenal of photonic circuit designers . The coherent integration of

Thermo-optic characteristics and switching power limit of slow-light photonic crystal structures on a silicon-on-insulator platform.

PubMed

Chahal, Manjit; Celler, George K; Jaluria, Yogesh; Jiang, Wei

2012-02-13

Employing a semi-analytic approach, we study the influence of key structural and optical parameters on the thermo-optic characteristics of photonic crystal waveguide (PCW) structures on a silicon-on-insulator (SOI) platform. The power consumption and spatial temperature profile of such structures are given as explicit functions of various structural, thermal and optical parameters, offering physical insight not available in finite-element simulations. Agreement with finite-element simulations and experiments is demonstrated. Thermal enhancement of the air-bridge structure is analyzed. The practical limit of thermo-optic switching power in slow light PCWs is discussed, and the scaling with key parameters is analyzed. Optical switching with sub-milliwatt power is shown viable.

Magneto-optical non-reciprocal devices in silicon photonics

PubMed Central

Shoji, Yuya; Mizumoto, Tetsuya

2014-01-01

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm. PMID:27877640

Silicon photonics for high-performance interconnection networks

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr

2011-12-01

We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics enables new sets of opportunities that we can leverage for performance gains, as well as new sets of challenges that we must solve. Leveraging its inherent compatibility with standard fabrication techniques of the semiconductor industry, combined with its capability of dense integration with advanced microelectronics, silicon photonics also offers a clear path toward commercialization through low-cost mass-volume production. Combining empirical validations of feasibility, demonstrations of massive performance gains in large-scale systems, and the potential for commercial penetration of silicon photonics, the impact of this work will become evident in the many decades that follow.

Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

NASA Astrophysics Data System (ADS)

Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

2016-03-01

This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

Three-dimensional patterning in polymer optical waveguides using focused ion beam milling

NASA Astrophysics Data System (ADS)

Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher

2016-07-01

Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.

SERS detection of R6G based on a novel graphene oxide/silver nanoparticles/silicon pyramid arrays structure.

PubMed

Zhang, C; Jiang, S Z; Huo, Y Y; Liu, A H; Xu, S C; Liu, X Y; Sun, Z C; Xu, Y Y; Li, Z; Man, B Y

2015-09-21

We present a novel surface-enhanced Raman scattering (SERS) substrate based on graphene oxide/silver nanoparticles/silicon pyramid arrays structure (GO/Ag/PSi). The SERS behaviors are discussed and compared by the detection of R6G. Based on the contrast experiments with PSi, GO/PSi, Ag/PSi and GO/AgA/PSi as SERS substrate, the perfect bio-compatibility, good homogeneity and chemical stability were confirmed. We also calculated the electric field distributions using Finite-difference time-domain (FDTD) analysis to further understand the GO/Ag/PSi structure as a perfect SERS platform. These experimental and theoretical results imply that the GO/Ag/PSi with regular pyramids array is expected to be an effective substrate for label-free sensitive SERS detections in areas of medicine, food safety and biotechnology.

Optomechanical and photothermal interactions in suspended photonic crystal membranes.

PubMed

Woolf, David; Hui, Pui-Chuen; Iwase, Eiji; Khan, Mughees; Rodriguez, Alejandro W; Deotare, Parag; Bulu, Irfan; Johnson, Steven G; Capasso, Federico; Loncar, Marko

2013-03-25

We present here an optomechanical system fabricated with novel stress management techniques that allow us to suspend an ultrathin defect-free silicon photonic-crystal membrane above a Silicon-on-Insulator (SOI) substrate with a gap that is tunable to below 200 nm. Our devices are able to generate strong attractive and repulsive optical forces over a large surface area with simple in- and out- coupling and feature the strongest repulsive optomechanical coupling in any geometry to date (gOM/2π ≈65 GHz/nm). The interplay between the optomechanical and photo-thermal-mechanical dynamics is explored, and the latter is used to achieve cooling and amplification of the mechanical mode, demonstrating that our platform is well-suited for potential applications in low-power mass, force, and refractive-index sensing as well as optomechanical accelerometry.

Neuromorphic audio-visual sensor fusion on a sound-localizing robot.

PubMed

Chan, Vincent Yue-Sek; Jin, Craig T; van Schaik, André

2012-01-01

This paper presents the first robotic system featuring audio-visual (AV) sensor fusion with neuromorphic sensors. We combine a pair of silicon cochleae and a silicon retina on a robotic platform to allow the robot to learn sound localization through self motion and visual feedback, using an adaptive ITD-based sound localization algorithm. After training, the robot can localize sound sources (white or pink noise) in a reverberant environment with an RMS error of 4-5° in azimuth. We also investigate the AV source binding problem and an experiment is conducted to test the effectiveness of matching an audio event with a corresponding visual event based on their onset time. Despite the simplicity of this method and a large number of false visual events in the background, a correct match can be made 75% of the time during the experiment.

Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared

NASA Astrophysics Data System (ADS)

Rissanen, A.; Mannila, R.; Tuohiniemi, M.; Akujärvi, A.; Antila, J.

2014-03-01

This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800 - 1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN λ/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible - near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.

UTBB FDSOI: Evolution and opportunities

NASA Astrophysics Data System (ADS)

Monfray, Stephane; Skotnicki, Thomas

2016-11-01

As today's 28 nm FDSOI (Fully Depleted Silicon On Insulator) technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also new opportunities, among logic applications and extending the possibilities offered by the platform. We will summarize how the advantages provided by the thin BOX have been first explored and developed, and how the back biasing techniques are the key to the outstanding performances provided by the FDSOI at low voltage. Then, as the FDSOI technology is also a solution to develop innovative platforms and applications, we will detail some opportunities. In particular, we will present monolithic 3D integration, ultra-low power devices for IoT (Internet of Things) and ultra-sensitive sensors.

Optical fiber Bragg grating-instrumented silicone liner for interface pressure measurement within prosthetic sockets of lower-limb amputees

NASA Astrophysics Data System (ADS)

Al-Fakih, Ebrahim; Arifin, Nooranida; Pirouzi, Gholamhossein; Mahamd Adikan, Faisal Rafiq; Shasmin, Hanie Nadia; Abu Osman, Noor Azuan

2017-08-01

This paper presents a fiber Bragg grating (FBG)-instrumented prosthetic silicone liner that provides cushioning for the residual limb and can successfully measure interface pressures inside prosthetic sockets of lower-limb amputees in a simple and practical means of sensing. The liner is made of two silicone layers between which 12 FBG sensors were embedded at locations of clinical interest. The sensors were then calibrated using a custom calibration platform that mimics a real-life situation. Afterward, a custom gait simulating machine was built to test the liner performance during an amputee's simulated gait. To validate the findings, the results were compared to those obtained by the commonly used F-socket mats. As the statistical findings reveal, both pressure mapping methods measured the interface pressure in a consistent way, with no significant difference (P-values ≥0.05). This pressure mapping technique in the form of a prosthetic liner will allow prosthetics professionals to quickly and accurately create an overall picture of the interface pressure distribution inside sockets in research and clinical settings, thereby improving the socket fit and amputee's satisfaction.

Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits.

PubMed

Liu, Liu; Ding, Yunhong; Yvind, Kresten; Hvam, Jørn M

2011-06-20

A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6 dB and an extinction ratio of 12 dB have been obtained experimentally in the whole C-band.

A Low-wear Planar-contact Silicon Raceway for Microball Bearing Applications

DTIC Science & Technology

2009-04-01

of friction between stainless steel microballs and silicon grooves (18–20). Both linear and rotary micromotors for sensor platforms were developed...mechanism, like a micromotor , will enable devices to reach higher speeds. Previously, the radial surface wear track depth was >15 m for a device...can lead to significant whirl and axial misalignment, which is critical for micromotor and micropump applications. Small changes in the alignment

A mock heart engineered with helical aramid fibers for in vitro cardiovascular device testing.

PubMed

Jansen-Park, So-Hyun; Hsu, Po-Lin; Müller, Indra; Steinseifer, Ulrich; Abel, Dirk; Autschbach, Rüdiger; Rossaint, Rolf; Schmitz-Rode, Thomas

2017-04-01

Mock heart circulation loops (MHCLs) serve as in-vitro platforms to investigate the physiological interaction between circulatory systems and cardiovascular devices. A mock heart (MH) engineered with silicone walls and helical aramid fibers, to mimic the complex contraction of a natural heart, has been developed to advance the MHCL previously developed in our group. A mock aorta with an anatomical shape enables the evaluation of a cannulation method for ventricular assist devices (VADs) and investigation of the usage of clinical measurement systems like pressure-volume catheters. Ventricle and aorta molds were produced based on MRI data and cast with silicone. Aramid fibers were layered in the silicone ventricle to reproduce ventricle torsion. A rotating hollow shaft was connected to the apex enabling the rotation of the MH and the connection of a VAD. Silicone wall thickness, aramid fiber angle and fiber pitch were varied to generate different MH models. All MH models were placed in a tank filled with variable amounts of water and air simulating the compliance. In this work, physiological ventricular torsion angles (15°-26°) and physiological pressure-volume loops were achieved. This MHCL can serve as a comprehensive testing platform for cardiovascular devices, such as artificial heart valves and cannulation of VADs.

Review of silicon photonics: history and recent advances

NASA Astrophysics Data System (ADS)

Ye, Winnie N.; Xiong, Yule

2013-09-01

Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting. Mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor (CMOS) fabrication processing technology, silicon has becoming the material choice for photonic and optoelectronic circuits with low cost, ultra-compact device footprint, and high-density integration. This review paper provides an overview on silicon photonics, by highlighting the early work from the mid-1980s on the fundamental building blocks such as silicon platforms and waveguides, and the main milestones that have been achieved so far in the field. A summary of reported work on functional elements in both passive and active devices, as well as the applications of the technology in interconnect, sensing, and solar cells, is identified.

Tapered polysilicon core fibers for nonlinear photonics.

PubMed

Suhailin, Fariza H; Shen, Li; Healy, Noel; Xiao, Limin; Jones, Maxwell; Hawkins, Thomas; Ballato, John; Gibson, Ursula J; Peacock, Anna C

2016-04-01

We propose and demonstrate a novel approach to obtaining small-core polysilicon waveguides from the silicon fiber platform. The fibers were fabricated via a conventional drawing tower method and, subsequently, tapered down to achieve silicon core diameters of ∼1  μm, the smallest optical cores for this class of fiber to date. Characterization of the material properties have shown that the taper process helps to improve the local crystallinity of the silicon core, resulting in a significant reduction in the material loss. By exploiting the combination of small cores and low losses, these tapered fibers have enabled the first observation of nonlinear transmission within a polycrystalline silicon waveguide of any type. As the fiber drawing method is highly scalable, it opens a route for the development of low-cost and flexible nonlinear silicon photonic systems.

Silicon oxynitride-on-glass waveguide array refractometer with wide sensing range and integrated read-out (Conference Presentation)

NASA Astrophysics Data System (ADS)

Viegas, Jaime; Mayeh, Mona; Srinivasan, Pradeep; Johnson, Eric G.; Marques, Paulo V. S.; Farahi, Faramarz

2017-02-01

In this work, a silicon oxynitride-on-silica refractometer is presented, based on sub-wavelength coupled arrayed waveguide interference, and capable of low-cost, high resolution, large scale deployment. The sensor has an experimental spectral sensitivity as high as 3200 nm/RIU, covering refractive indices ranging from 1 (air) up to 1.43 (oils). The sensor readout can be performed by standard spectrometers techniques of by pattern projection onto a camera, followed by optical pattern recognition. Positive identification of the refractive index of an unknown species is obtained by pattern cross-correlation with a look-up calibration table based algorithm. Given the lower contrast between core and cladding in such devices, higher mode overlap with single mode fiber is achieved, leading to a larger coupling efficiency and more relaxed alignment requirements as compared to silicon photonics platform. Also, the optical transparency of the sensor in the visible range allows the operation with light sources and camera detectors in the visible range, of much lower capital costs for a complete sensor system. Furthermore, the choice of refractive indices of core and cladding in the sensor head with integrated readout, allows the fabrication of the same device in polymers, for mass-production replication of disposable sensors.

Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

NASA Astrophysics Data System (ADS)

Sokolovskij, R.; Liu, P.; van Zeijl, H. W.; Mimoun, B.; Zhang, G. Q.

2015-05-01

Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

PubMed

Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

2014-12-01

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Sensitive Detection of Protein and miRNA Cancer Biomarkers using Silicon-Based Photonic Crystals and A Resonance Coupling Laser Scanning Platform

PubMed Central

George, Sherine; Chaudhery, Vikram; Lu, Meng; Takagi, Miki; Amro, Nabil; Pokhriyal, Anusha; Tan, Yafang; Ferreira, Placid; Cunningham, Brian T.

2013-01-01

Enhancement of the fluorescent output of surface-based fluorescence assays by performing them upon nanostructured photonic crystal (PC) surfaces has been demonstrated to increase signal intensities by >8000×. Using the multiplicative effects of optical resonant coupling to the PC in increasing the electric field intensity experienced by fluorescent labels (“enhanced excitation”) and the spatially biased funneling of fluorophore emissions through coupling to PC resonances (“enhanced extraction”), PC enhanced fluorescence (PCEF) can be adapted to reduce the limits of detection of disease biomarker assays, and to reduce the size and cost of high sensitivity detection instrumentation. In this work, we demonstrate the first silicon-based PCEF detection platform for multiplexed biomarker assay. The sensor in this platform is a silicon-based PC structure, comprised of a SiO2 grating that is overcoated with a thin film of high refractive index TiO2 and is produced in a semiconductor foundry for low cost, uniform, and reproducible manufacturing. The compact detection instrument that completes this platform was designed to efficiently couples fluorescence excitation from a semiconductor laser to the resonant optical modes of the PC, resulting in elevated electric field strength that is highly concentrated within the region <100 nm from the PC surface. This instrument utilizes a cylindrically focused line to scan a microarray in <1 minute. To demonstrate the capabilities of this sensor-detector platform, microspot fluorescent sandwich immunoassays using secondary antibodies labeled with Cy5 for two cancer biomarkers (TNF-α and IL-3) were performed. Biomarkers were detected at concentrations as low as 0.1 pM. In a fluorescent microarray for detection of a breast cancer miRNA biomarker miR-21, the miRNA was detectable at a concentration of 0.6 pM. PMID:23963502

Formation of composite polyacrylamide and silicone substrates for independent control of stiffness and strain.

PubMed

Simmons, Chelsey S; Ribeiro, Alexandre J S; Pruitt, Beth L

2013-02-21

Cells that line major tissues in the body such as blood vessels, lungs and gastrointestinal tract experience deformation from mechanical strain with our heartbeat, breathing, and other daily activities. Tissues also remodel in both development and disease, changing their mechanical properties. Taken together, cells can experience vastly different mechanical cues resulting from the combination of these interdependent stimuli. To date, most studies of cellular mechanotransduction have been limited to assays in which variations in substrate stiffness and strain were not combined. Here, we address this technological gap by implementing a method that can simultaneously tune both substrate stiffness and mechanical strain. Substrate stiffness is controlled with different monomer and crosslinker ratios during polyacrylamide gel polymerization, and strain is transferred from the underlying silicone platform when stretched. We demonstrate this platform with polyacrylamide gels with elastic moduli at 6 kPa and 20 kPa in combination with two different silicone formulations. The gels remain attached with up to 50% applied strains. To validate strain transfer through the gels into cells, we employ particle-tracking methods and observe strain transmission via cell morphological changes.

Formation of composite polyacrylamide and silicone substrates for independent control of stiffness and strain

PubMed Central

Simmons, Chelsey S.; Ribeiro, Alexandre J. S.; Pruitt, Beth L.

2013-01-01

Cells that line major tissues in the body such as blood vessels, lungs and gastrointestinal tract experience deformation from mechanical strain with our heartbeat, breathing, and other daily activities. Tissues also remodel in both development and disease, changing their mechanical properties. Taken together, cells can experience vastly different mechanical cues resulting from the combination of these interdependent stimuli. To date, most studies of cellular mechanotransduction have been limited to assays in which variations in substrate stiffness and strain were not combined. Here, we address this technological gap by implementing a method that can simultaneously tune both substrate stiffness and mechanical strain. Substrate stiffness is controlled with different monomer and crosslinker ratios during polyacrylamide gel polymerization, and strain is transferred from the underlying silicone platform when stretched. We demonstrate this platform with polyacrylamide gels with elastic moduli at 6 kPa and 20 kPa in combination with two different silicone formulations. The gels remain attached with up to 50% applied strains. To validate strain transfer through the gels into cells, we employ particle-tracking methods and observe strain transmission via cell morphological changes. PMID:23287818

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

PubMed

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

High surface area silicon materials: fundamentals and new technology.

PubMed

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

PubMed

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

High-performance silicon photonics technology for telecommunications applications.

PubMed

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

PubMed Central

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. PMID:27877659

High-performance silicon photonics technology for telecommunications applications

NASA Astrophysics Data System (ADS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Westmont, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Rapid City, SD; Ko, Heung Cho [Urbana, IL; Mack, Shawn [Goleta, CA

2011-10-18

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2010-09-21

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides.

PubMed

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V; Yoon, Jongseung

2017-04-25

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF 4 :Yb 3+ ,Er 3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (∼40.1 mA/cm 2 ) and energy conversion efficiency (∼12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ∼13.6 mA/cm 2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption andmore » enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.« less

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Polymer waveguide grating sensor integrated with a thin-film photodetector

PubMed Central

Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

2014-01-01

This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III–V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing. PMID:24466407

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2005-03-01

This work integrates multi-depth DRIE etching, trench-refilled molding, two poly-Si layers MUMPs and bulk releasing to improve the variety and performance of MEMS devices. In summary, the present fabrication process, named MOSBE II, has three merits. First, this process can monolithically fabricate and integrate poly-Si thin-film structures with different thicknesses and stiffnesses, such as the flexible spring and the stiff mirror plate. Second, multi-depth structures, such as vertical comb electrodes, are available from the DRIE processes. Third, a cavity under the micromachined device is provided by the bulk silicon etching process, so that a large out-of-plane motion is allowed. In application, an optical scanner driven by the self-aligned vertical comb actuator was demonstrated. The poly-Si micromachined components fabricated by MOSBE II can further integrate with the MUMPs devices to establish a more powerful MOEMS platform.

A low-power high-speed ultra-wideband pulse radio transmission system.

PubMed

Wei Tang; Culurciello, E

2009-10-01

We present a low-power high-speed ultra-wideband (UWB) transmitter with a wireless transmission test platform. The system is specifically designed for low-power high-speed wireless implantable biosensors. The integrated transmitter consists of a compact pulse generator and a modulator. The circuit is fabricated in the 0.5-mum silicon-on-sapphire process and occupies 420 mum times 420 mum silicon area. The transmitter is capable of generating pulses with 1-ns width and the pulse rate can be controlled between 90 MHz and 270 MHz. We built a demonstration/testing system for the transmitter. The transmitter achieves a 14-Mb/s data rate. With 50% duty cycle data, the power consumption of the chip is between 10 mW and 21 mW when the transmission distance is from 3.2 to 4 m. The core circuit size is 70 mum times 130 mum.

Cell Culture on MEMS Platforms: A Review

PubMed Central

Ni, Ming; Tong, Wen Hao; Choudhury, Deepak; Rahim, Nur Aida Abdul; Iliescu, Ciprian; Yu, Hanry

2009-01-01

Microfabricated systems provide an excellent platform for the culture of cells, and are an extremely useful tool for the investigation of cellular responses to various stimuli. Advantages offered over traditional methods include cost-effectiveness, controllability, low volume, high resolution, and sensitivity. Both biocompatible and bio-incompatible materials have been developed for use in these applications. Biocompatible materials such as PMMA or PLGA can be used directly for cell culture. However, for bio-incompatible materials such as silicon or PDMS, additional steps need to be taken to render these materials more suitable for cell adhesion and maintenance. This review describes multiple surface modification strategies to improve the biocompatibility of MEMS materials. Basic concepts of cell-biomaterial interactions, such as protein adsorption and cell adhesion are covered. Finally, the applications of these MEMS materials in Tissue Engineering are presented. PMID:20054478

Particle platforms for cancer immunotherapy

PubMed Central

Serda, Rita Elena

2013-01-01

Elevated understanding and respect for the relevance of the immune system in cancer development and therapy has led to increased development of immunotherapeutic regimens that target existing cancer cells and provide long-term immune surveillance and protection from cancer recurrence. This review discusses using particles as immune adjuvants to create vaccines and to augment the anticancer effects of conventional chemotherapeutics. Several particle prototypes are presented, including liposomes, polymer nanoparticles, and porous silicon microparticles, the latter existing as either single- or multiparticle platforms. The benefits of using particles include immune-cell targeting, codelivery of antigens and immunomodulatory agents, and sustained release of the therapeutic payload. Nanotherapeutic-based activation of the immune system is dependent on both intrinsic particle characteristics and on the immunomodulatory cargo, which may include danger signals known as pathogen-associated molecular patterns and cytokines for effector-cell activation. PMID:23761969

Fiber Bragg grating sensor interrogators on chip: challenges and opportunities

NASA Astrophysics Data System (ADS)

Marin, Yisbel; Nannipieri, Tiziano; Oton, Claudio J.; Di Pasquale, Fabrizio

2017-04-01

In this paper we present an overview of the current efforts towards integration of Fiber Bragg Grating (FBG) sensor interrogators. Different photonic integration platforms will be discussed, including monolithic planar lightwave circuit technology, silicon on insulator (SOI), indium phosphide (InP) and gallium arsenide (GaAs) material platforms. Also various possible techniques for wavelength metering and methods for FBG multiplexing will be discussed and compared in terms of resolution, dynamic performance, multiplexing capabilities and reliability. The use of linear filters, array waveguide gratings (AWG) as multiple linear filters and AWG based centroid signal processing techniques will be addressed as well as interrogation techniques based on tunable micro-ring resonators and Mach-Zehnder interferometers (MZI) for phase sensitive detection. The paper will also discuss the challenges and perspectives of photonic integration to address the increasing requirements of several industrial applications.

The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

2017-11-01

The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

Photonic Crystal Sensors Based on Porous Silicon

PubMed Central

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

NASA Technical Reports Server (NTRS)

Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.;

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xiaoyu; Lei, Shiming; Yu, Shih -Ying

Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillarymore » fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very welldefined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ~0.47-1dB/cm at the standard telecommunication wavelength (1550 nm). Furthermore, tt also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.« less

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.

PubMed

Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H

2016-06-08

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms.

Laser fabrication of porous silicon-based platforms for cell culturing.

PubMed

Peláez, Ramón-J; Afonso, Carmen-N; Vega, Fidel; Recio-Sánchez, Gonzalo; Torres-Costa, Vicente; Manso-Silván, Miguel; García-Ruiz, Josefa-P; Martín-Palma, Raúl-J

2013-11-01

In this study, we explore the selective culturing of human mesenchymal stem cells (hMSCs) on Si-based diffractive platforms. We demonstrate a single-step and flexible method for producing platforms on nanostructured porous silicon (nanoPS) based on the use of single pulses of an excimer laser to expose phase masks. The resulting patterns are typically 1D patterns formed by fringes or 2D patterns formed by circles. They are formed by alternate regions of almost unmodified nanoPS and regions where the nanoPS surface has melted and transformed into Si nanoparticles. The patterns are produced in relatively large areas (a few square millimeters) and can have a wide range of periodicities and aspect ratios. Direct binding, that is, with no previous functionalization of the pattern, alignment, and active polarization of hMSCs are explored. The results show the preferential direct binding of the hMSCs along the transformed regions whenever their width compares with the dimensions of the cells and they escape from patterns for smaller widths suggesting that the selectivity can be tailored through the pattern period. Copyright © 2013 Wiley Periodicals, Inc.

Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

NASA Astrophysics Data System (ADS)

Fohrmann, Lena Simone; Sommer, Gerrit; Pitruzzello, Giampaolo; Krauss, Thomas F.; Petrov, Alexander Yu.; Eich, Manfred

2017-09-01

Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC) mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

A Ubiquitous Optical Microsystem Platform with Application to Optical Metrology and Chemical Sensing

NASA Astrophysics Data System (ADS)

Gerling, John David

This dissertation is concerned with the development of a novel, versatile optical sensor platform for optical metrology and chemical sensing. We demonstrate the feasibility of embedding optical components between bonded silicon wafers with receptor cavities and optical windows to create a self-contained sensor microsystem that can be used for in-situ measurement of hostile environments. Arrays of these sensors internal to a silicon wafer can enable optical sensing for in-situ, real-time mapping and process development for the semiconductor industry in the form of an instrumented substrate. Single-die versions of these optical sensor platforms can also enable point-of-care diagnostics, high throughput disease screening, bio-warfare agent detection, and environmental monitoring. Our first discussion will focus on a single-wavelength interferometry-based prototype sensor. Several applications are demonstrated using this single wavelength prototype: refractive index monitoring, SiO2 plasma etching, chemical mechanical polishing, photoresist cure and dissolution, copper etch end-point detection, and also nanopore wetting phenomena. Subsequent sections of this dissertation will describe efforts to improve the optical sensor platform to achieve multi-wavelength sensing function. We explore the use of an off-the-shelf commercial RGB sensor for colorimetric monitoring of copper and aluminum thin-film etchings. We then expand upon our prior work and concepts to realize a fully integrated, chip-sized microspectrometer with a photon engine based on a diffraction grating. The design, fabrication, and demonstration of a working prototype with dimensions < 1 mm thick using standard planar microfabrication techniques is described. Proof-of-concept demonstrations indicate the working principle of dispersion, although with a low spectral resolution of 120 nm. With working knowledge of the issues of the first prototype, we present an improved 5-channel microspectrometer with a spectral range 400-900 nm and demonstrate its ability for spectral identification with 3 different phosphor powder samples. Finally, we conclude with suggestions for future areas of research.

Last Advances in Silicon-Based Optical Biosensors.

PubMed

Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C; Lechuga, Laura M

2016-02-24

We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

Reconfigurable and tunable compact comb filter and (de)interleaver on silicon platform.

PubMed

Zhou, Nan; Zheng, Shuang; Long, Yun; Ruan, Zhengsen; Shen, Li; Wang, Jian

2018-02-19

We propose and demonstrate a reconfigurable and tunable chip-scale comb filter and (de)interleaver on a silicon platform. The silicon-based photonic integrated device is formed by Sagnac loop mirrors (SLMs) with directional couplers replaced by multi-mode interference (MMI) assisted tunable Mach-Zehnder interferometer (MZI) couplers. The device can be regarded as a large SLM incorporating two small SLMs which form a Fabry-Perot (FP) cavity. By appropriately adjusting the micro-heaters in tunable MZI couplers and cavity, switchable operation between comb filter and (de)interleaver and extinction ratio and wavelength tunable operations of comb filter and (de)interleaver are achievable by thermo-optic tuning. Reconfigurable comb filter and (de)interleaver is demonstrated in the experiment. The central wavelength shifts of comb filter and (de)interleaver are demonstrated with wavelength tuning efficiencies of ~0.0224 nm/mW and ~0.0193 nm/mW, respectively. The 3-dB bandwidth of the comb filter is ~0.032 nm. The 3-dB and 20-dB bandwidths of the (de)interleaver passband are ~0.225 nm and ~0.326 nm. The obtained results indicate that the designed and fabricated device provides switchable comb filtering and interleaving functions together with extinction ratio and wavelength tunabilities. Reconfigurable and tunable silicon-based comb filter and (de)interleaver may find potential applications in robust wavelength-division multiplexing (WDM) optical communication systems.

Single-crystal silicon optical fiber by direct laser crystallization

DOE PAGES

Ji, Xiaoyu; Lei, Shiming; Yu, Shih -Ying; ...

2016-12-05

Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillarymore » fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very welldefined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ~0.47-1dB/cm at the standard telecommunication wavelength (1550 nm). Furthermore, tt also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.« less

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

PubMed

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

PubMed

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

Optical fiber Bragg grating-instrumented silicone liner for interface pressure measurement within prosthetic sockets of lower-limb amputees.

PubMed

Al-Fakih, Ebrahim; Arifin, Nooranida; Pirouzi, Gholamhossein; Mahamd Adikan, Faisal Rafiq; Shasmin, Hanie Nadia; Abu Osman, Noor Azuan

2017-08-01

This paper presents a fiber Bragg grating (FBG)-instrumented prosthetic silicone liner that provides cushioning for the residual limb and can successfully measure interface pressures inside prosthetic sockets of lower-limb amputees in a simple and practical means of sensing. The liner is made of two silicone layers between which 12 FBG sensors were embedded at locations of clinical interest. The sensors were then calibrated using a custom calibration platform that mimics a real-life situation. Afterward, a custom gait simulating machine was built to test the liner performance during an amputee's simulated gait. To validate the findings, the results were compared to those obtained by the commonly used F-socket mats. As the statistical findings reveal, both pressure mapping methods measured the interface pressure in a consistent way, with no significant difference (P-values ≥0.05). This pressure mapping technique in the form of a prosthetic liner will allow prosthetics professionals to quickly and accurately create an overall picture of the interface pressure distribution inside sockets in research and clinical settings, thereby improving the socket fit and amputee's satisfaction. (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Selective on site separation and detection of molecules in diluted solutions with super-hydrophobic clusters of plasmonic nanoparticles.

PubMed

Gentile, Francesco; Coluccio, Maria Laura; Zaccaria, Remo Proietti; Francardi, Marco; Cojoc, Gheorghe; Perozziello, Gerardo; Raimondo, Raffaella; Candeloro, Patrizio; Di Fabrizio, Enzo

2014-07-21

Super-hydrophobic surfaces are bio-inspired interfaces with a superficial texture that, in its most common evolution, is formed by a periodic lattice of silicon micro-pillars. Similar surfaces reveal superior properties compared to conventional flat surfaces, including very low friction coefficients. In this work, we modified meso-porous silicon micro-pillars to incorporate networks of metal nano-particles into the porous matrix. In doing so, we obtained a multifunctional-hierarchical system in which (i) at a larger micrometric scale, the super-hydrophobic pillars bring the molecules dissolved in an ultralow-concentration droplet to the active sites of the device, (ii) at an intermediate meso-scale, the meso-porous silicon film adsorbs the low molecular weight content of the solution and, (iii) at a smaller nanometric scale, the aggregates of silver nano-particles would measure the target molecules with unprecedented sensitivity. In the results, we demonstrated how this scheme can be utilized to isolate and detect small molecules in a diluted solution in very low abundance ranges. The presented platform, coupled to Raman or other spectroscopy techniques, is a realistic candidate for the protein expression profiling of biological fluids.

Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

PubMed

Yin, Chenxuan; Chen, Yujie; Jiang, Xiaohui; Zhang, Yanfeng; Shao, Zengkai; Xu, Pengfei; Yu, Siyuan

2016-10-15

Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

Thermal Management Investigations in Ceramic Thin Disk Lasers

DTIC Science & Technology

2011-01-14

techniques. 10-14mm diameter 0.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a larger platform, more than 6kW...along with various cooling techniques. 10-14mm diameter O.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a...assemblies are either attached to heat sinks or directly to the Cu W cooling mount, see Fig. I (c) & (d). The heat sinks tested are SiC , sapphire, and

Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors.

PubMed

Fard, Sahba Talebi; Murray, Kyle; Caverley, Michael; Donzella, Valentina; Flueckiger, Jonas; Grist, Samantha M; Huante-Ceron, Edgar; Schmidt, Shon A; Kwok, Ezra; Jaeger, Nicolas A F; Knights, Andrew P; Chrostowski, Lukas

2014-11-17

A resonance-enhanced, defect-mediated, ring resonator photodetector has been implemented as a single unit biosensor on a silicon-on-insulator platform, providing a cost effective means of integrating ring resonator sensors with photodetectors for lab-on-chip applications. This method overcomes the challenge of integrating hybrid photodetectors on the chip. The demonstrated responsivity of the photodetector-sensor was 90 mA/W. Devices were characterized using refractive index modified solutions and showed sensitivities of 30 nm/RIU.

Last Advances in Silicon-Based Optical Biosensors

PubMed Central

Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C.; Lechuga, Laura M.

2016-01-01

We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies. PMID:26927105

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

NASA Astrophysics Data System (ADS)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

Development of L-lactate dehydrogenase biosensor based on porous silicon resonant microcavities as fluorescence enhancers.

PubMed

Jenie, S N Aisyiyah; Prieto-Simon, Beatriz; Voelcker, Nicolas H

2015-12-15

The up-regulation of L-lactate dehydrogenase (LDH), an intracellular enzyme present in most of all body tissues, is indicative of several pathological conditions and cellular death. Herein, we demonstrate LDH detection using porous silicon (pSi) microcavities as a luminescence-enhancing optical biosensing platform. Non-fluorescent resazurin was covalently attached onto the pSi surface via thermal hydrocarbonisation, thermal hydrosylilation and acylation. Each surface modification step was confirmed by means of FTIR and the optical shifts of the resonance wavelength of the microcavity. Thermal hydrocarbonisation also afforded excellent surface stability, ensuring that the resazurin was not reduced on the pSi surface. Using a pSi microcavity biosensor, the fluorescence signal upon detection of LDH was amplified by 10 and 5-fold compared to that of a single layer and a detuned microcavity, respectively, giving a limit of detection of 0.08 U/ml. The biosensor showed a linear response between 0.16 and 6.5 U/ml, covering the concentration range of LDH in normal as well as damaged tissues. The biosensor was selective for LDH and did not produce a signal upon incubation with another NAD-dependant enzyme L-glutamic dehydrogenase. The use of the pSi microcavity as a sensing platform reduced reagent usage by 30% and analysis time threefold compared to the standard LDH assay in solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Challenges and solutions for high-volume testing of silicon photonics

NASA Astrophysics Data System (ADS)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

Nonclassical light sources for silicon photonics

NASA Astrophysics Data System (ADS)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

A photoelectrochemical platform for the capture and release of rare single cells.

PubMed

Parker, Stephen G; Yang, Ying; Ciampi, Simone; Gupta, Bakul; Kimpton, Kathleen; Mansfeld, Friederike M; Kavallaris, Maria; Gaus, Katharina; Gooding, J Justin

2018-06-12

For many normal and aberrant cell behaviours, it is important to understand the origin of cellular heterogeneity. Although powerful methods for studying cell heterogeneity have emerged, they are more suitable for common rather than rare cells. Exploring the heterogeneity of rare single cells is challenging because these rare cells must be first pre-concentrated and undergo analysis prior to classification and expansion. Here, a versatile capture & release platform consisting of an antibody-modified and electrochemically cleavable semiconducting silicon surface for release of individual cells of interest is presented. The captured cells can be interrogated microscopically and tested for drug responsiveness prior to release and recovery. The capture & release strategy was applied to identify rare tumour cells from whole blood, monitor the uptake of, and response to, doxorubicin and subsequently select cells for single-cell gene expression based on their response to the doxorubicin.

Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Jingwen; Sun, Xiankai, E-mail: xksun@cuhk.edu.hk; Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories

2016-04-11

Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with themore » extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.« less

Nanoscale light–matter interactions in atomic cladding waveguides

PubMed Central

Stern, Liron; Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2013-01-01

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light–matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light–vapour interactions on a chip. Specifically, we demonstrate light–matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime. PMID:23462991

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

PubMed

Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2011-07-04

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Experimental realization of Bloch oscillations in a parity-time synthetic silicon photonic lattice

PubMed Central

Xu, Ye-Long; Fegadolli, William S.; Gan, Lin; Lu, Ming-Hui; Liu, Xiao-Ping; Li, Zhi-Yuan; Scherer, Axel; Chen, Yan-Feng

2016-01-01

As an important electron transportation phenomenon, Bloch oscillations have been extensively studied in condensed matter. Due to the similarity in wave properties between electrons and other quantum particles, Bloch oscillations have been observed in atom lattices, photonic lattices, and so on. One of the many distinct advantages for choosing these systems over the regular electronic systems is the versatility in engineering artificial potentials. Here by utilizing dissipative elements in a CMOS-compatible photonic platform to create a periodic complex potential and by exploiting the emerging concept of parity-time synthetic photonics, we experimentally realize spatial Bloch oscillations in a non-Hermitian photonic system on a chip level. Our demonstration may have significant impact in the field of quantum simulation by following the recent trend of moving complicated table-top quantum optics experiments onto the fully integrated CMOS-compatible silicon platform. PMID:27095533

Tuning cell adhesion by direct nanostructuring silicon into cell repulsive/adhesive patterns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Premnath, Priyatha, E-mail: priyatha.premnath@ryerson.ca; Tavangar, Amirhossein, E-mail: atavanga@ryerson.ca; Tan, Bo, E-mail: tanbo@ryerson.ca

2015-09-10

Developing platforms that allow tuning cell functionality through incorporating physical, chemical, or mechanical cues onto the material surfaces is one of the key challenges in research in the field of biomaterials. In this respect, various approaches have been proposed and numerous structures have been developed on a variety of materials. Most of these approaches, however, demand a multistep process or post-chemical treatment. Therefore, a simple approach would be desirable to develop bio-functionalized platforms for effectively modulating cell adhesion and consequently programming cell functionality without requiring any chemical or biological surface treatment. This study introduces a versatile yet simple laser approachmore » to structure silicon (Si) chips into cytophobic/cytophilic patterns in order to modulate cell adhesion and proliferation. These patterns are fabricated on platforms through direct laser processing of Si substrates, which renders a desired computer-generated configuration into patterns. We investigate the morphology, chemistry, and wettability of the platform surfaces. Subsequently, we study the functionality of the fabricated platforms on modulating cervical cancer cells (HeLa) behaviour. The results from in vitro studies suggest that the nanostructures efficiently repel HeLa cells and drive them to migrate onto untreated sites. The study of the morphology of the cells reveals that cells evade the cytophobic area by bending and changing direction. Additionally, cell patterning, cell directionality, cell channelling, and cell trapping are achieved by developing different platforms with specific patterns. The flexibility and controllability of this approach to effectively structure Si substrates to cell-repulsive and cell-adhesive patterns offer perceptible outlook for developing bio-functionalized platforms for a variety of biomedical devices. Moreover, this approach could pave the way for developing anti-cancer platforms that selectively repel cancer cells while favoring the adhesion of normal cells. - Highlights: • Si platforms with cytophobic/philic patterns were developed to program cell growth. • Both nanotopography and chemistry contributed to the cytophobic property. • Cytophobic zones efficiently repel and drive HeLa cells to migrate to adhesive sites. • The approach enables cell patterning, directionality, channelling, and trapping. • This approach paves the way for developing anti-cancer platforms.« less

Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

NASA Astrophysics Data System (ADS)

Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

2017-06-01

Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

PubMed

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi

2015-06-10

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

2013-05-01

In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

PubMed Central

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-01-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors.

PubMed

Oakes, Landon; Westover, Andrew; Mares, Jeremy W; Chatterjee, Shahana; Erwin, William R; Bardhan, Rizia; Weiss, Sharon M; Pint, Cary L

2013-10-22

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-10-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

PubMed

Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

2012-12-17

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Surface normal coupling to multiple-slot and cover-slotted silicon nanocrystalline waveguides and ring resonators

NASA Astrophysics Data System (ADS)

Covey, John; Chen, Ray T.

2014-03-01

Grating couplers are ideal for coupling into the tightly confined propagation modes of semiconductor waveguides. In addition, nonlinear optics has benefited from the sub-diffraction limit confinement of horizontal slot waveguides. By combining these two advancements, slot-based nonlinear optics with mode areas less than 0.02 μm2 can become as routine as twisting fiber connectors together. Surface normal fiber alignment to a chip is also highly desirable from time, cost, and manufacturing considerations. To meet these considerable design challenges, a custom genetic algorithm is created which, starting from purely random designs, creates a unique four stage grating coupler for two novel horizontal slot waveguide platforms. For horizontal multiple-slot waveguides filled with silicon nanocrystal, a theoretical fiber-towaveguide coupling efficiency of 68% is obtained. For thin silicon waveguides clad with optically active silicon nanocrystal, known as cover-slot waveguides, a theoretical fiber-to-waveguide coupling efficiency of 47% is obtained, and 1 dB and 3 dB theoretical bandwidths of 70 nm and 150 nm are obtained, respectively. Both waveguide platforms are fabricated from scratch, and their respective on-chip grating couplers are experimentally measured from a standard single mode fiber array that is mounted surface normally. The horizontal multiple-slot grating coupler achieved an experimental 60% coupling efficiency, and the horizontal cover-slot grating coupler achieved an experimental 38.7% coupling efficiency, with an extrapolated 1 dB bandwidth of 66 nm. This report demonstrates the promise of genetic algorithm-based design by reducing to practice the first large bandwidth vertical grating coupler to a novel silicon nanocrystal horizontal cover-slot waveguide.

Integration of a 6LilnSe 2 thermal neutron detector into a CubeSat instrument

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egner, Joanna C.; Groza, Michael; Burger, Arnold

This paper describes the development of a preliminary compact and lightweight neutron detection system that uses the low power consuming CubeSat platform and will be especially effective for space-based applications. This is made possible using the novel 6LiInSe 2 scintillator crystal and a silicon avalanche photodiode (Si-APD). The schematics of this instrument are presented as well as the response of the instrument to initial testing under alpha radiation. The entire system weighs 670 grams and requires 5 volts direct current at 3 watts.

Integration of a 6LilnSe 2 thermal neutron detector into a CubeSat instrument

DOE PAGES

Egner, Joanna C.; Groza, Michael; Burger, Arnold; ...

2016-11-08

This paper describes the development of a preliminary compact and lightweight neutron detection system that uses the low power consuming CubeSat platform and will be especially effective for space-based applications. This is made possible using the novel 6LiInSe 2 scintillator crystal and a silicon avalanche photodiode (Si-APD). The schematics of this instrument are presented as well as the response of the instrument to initial testing under alpha radiation. The entire system weighs 670 grams and requires 5 volts direct current at 3 watts.

Autonomous chemical and biological miniature wireless-sensor

NASA Astrophysics Data System (ADS)

Goldberg, Bar-Giora

2005-05-01

The presentation discusses a new concept and a paradigm shift in biological, chemical and explosive sensor system design and deployment. From large, heavy, centralized and expensive systems to distributed wireless sensor networks utilizing miniature platforms (nodes) that are lightweight, low cost and wirelessly connected. These new systems are possible due to the emergence and convergence of new innovative radio, imaging, networking and sensor technologies. Miniature integrated radio-sensor networks, is a technology whose time has come. These network systems are based on large numbers of distributed low cost and short-range wireless platforms that sense and process their environment and communicate data thru a network to a command center. The recent emergence of chemical and explosive sensor technology based on silicon nanostructures, coupled with the fast evolution of low-cost CMOS imagers, low power DSP engines and integrated radio chips, has created an opportunity to realize the vision of autonomous wireless networks. These threat detection networks will perform sophisticated analysis at the sensor node and convey alarm information up the command chain. Sensor networks of this type are expected to revolutionize the ability to detect and locate biological, chemical, or explosive threats. The ability to distribute large numbers of low-cost sensors over large areas enables these devices to be close to the targeted threats and therefore improve detection efficiencies and enable rapid counter responses. These sensor networks will be used for homeland security, shipping container monitoring, and other applications such as laboratory medical analysis, drug discovery, automotive, environmental and/or in-vivo monitoring. Avaak"s system concept is to image a chromatic biological, chemical and/or explosive sensor utilizing a digital imager, analyze the images and distribute alarm or image data wirelessly through the network. All the imaging, processing and communications would take place within the miniature, low cost distributed sensor platforms. This concept however presents a significant challenge due to a combination and convergence of required new technologies, as mentioned above. Passive biological and chemical sensors with very high sensitivity and which require no assaying are in development using a technique to optically and chemically encode silicon wafers with tailored nanostructures. The silicon wafer is patterned with nano-structures designed to change colors ad patterns when exposed to the target analytes (TICs, TIMs, VOC). A small video camera detects the color and pattern changes on the sensor. To determine if an alarm condition is present, an on board DSP processor, using specialized image processing algorithms and statistical analysis, determines if color gradient changes occurred on the sensor array. These sensors can detect several agents simultaneously. This system is currently under development by Avaak, with funding from DARPA through an SBIR grant.

Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits

NASA Astrophysics Data System (ADS)

Sutton, Akil K.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.

A CMOS enhanced solid-state nanopore based single molecule detection platform.

PubMed

Chen, Chinhsuan; Yemenicioglu, Sukru; Uddin, Ashfaque; Corgliano, Ellie; Theogarajan, Luke

2013-01-01

Solid-state nanopores have emerged as a single molecule label-free electronic detection platform. Existing transimpedance stages used to measure ionic current nanopores suffer from dynamic range limitations resulting from steady-state baseline currents. We propose a digitally-assisted baseline cancellation CMOS platform that circumvents this issue. Since baseline cancellation is a form of auto-zeroing, the 1/f noise of the system is also reduced. Our proposed design can tolerate a steady state baseline current of 10µA and has a usable bandwidth of 750kHz. Quantitative DNA translocation experiments on 5kbp DNA was performed using a 5nm silicon nitride pore using both the CMOS platform and a commercial system. Comparison of event-count histograms show that the CMOS platform clearly outperforms the commercial system, allowing for unambiguous interpretation of the data.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides

PubMed Central

Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.

2016-01-01

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

Design, implementation, and application of a microresonator platform for measuring energy dissipation by internal friction in nanowires.

PubMed

Das, Kaushik; Sosale, Guruprasad; Vengallatore, Srikar

2012-12-21

Accurate measurements of internal friction in nanowires are required for the rational design of high-Q resonators used in nanoelectromechanical systems and for fundamental studies of nanomechanical behavior. However, measuring internal friction is challenging because of the difficulties associated with identifying the contributions of material dissipation to structural damping. Here, we present an approach for overcoming these difficulties by using a composite microresonator platform that is calibrated against the ultimate limits of thermoelastic damping. The platform consists of an array of nanowires patterned at the root of a low-loss single-crystal silicon microcantilever. The structure is processed using a lift-off technique, implemented using electron-beam lithography, to achieve excellent control over the size, alignment, dispersion and location of the nanowire array. As the first application of this platform, we measured internal friction at room temperature in aluminum nanowires that ranged from 50 to 100 nm in thickness and 100 to 400 nm in width. Internal friction is ~0.03 at frequencies of 6.5-21 kHz. Transmission electron microscopy of the nanocrystalline grain structure, and comparison with previously measured values of internal friction in continuous thin films of aluminum, suggest that grain-boundary sliding is a major source of internal friction in these nanowires.

Method of making gold thiolate and photochemically functionalized microcantilevers

DOEpatents

Boiadjiev, Vassil I [Knoxville, TN; Brown, Gilbert M [Knoxville, TN; Pinnaduwage, Lal A [Knoxville, TN; Thundat, Thomas G [Knoxville, TN; Bonnesen, Peter V [Knoxville, TN; Goretzki, Gudrun [Nottingham, GB

2009-08-25

Highly sensitive sensor platforms for the detection of specific reagents, such as chromate, gasoline and biological species, using microcantilevers and other microelectromechanical systems (MEMS) whose surfaces have been modified with photochemically attached organic monolayers, such as self-assembled monolayers (SAM), or gold-thiol surface linkage are taught. The microcantilever sensors use photochemical hydrosilylation to modify silicon surfaces and gold-thiol chemistry to modify metallic surfaces thereby enabling individual microcantilevers in multicantilever array chips to be modified separately. Terminal vinyl substituted hydrocarbons with a variety of molecular recognition sites can be attached to the surface of silicon via the photochemical hydrosilylation process. By focusing the activating UV light sequentially on selected silicon or silicon nitride hydrogen terminated surfaces and soaking or spotting selected metallic surfaces with organic thiols, sulfides, or disulfides, the microcantilevers are functionalized. The device and photochemical method are intended to be integrated into systems for detecting specific agents including chromate groundwater contamination, gasoline, and biological species.

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

PubMed Central

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

2015-01-01

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. PMID:27877816

Integrated amorphous silicon-aluminum long-range surface plasmon polariton (LR-SPP) waveguides

NASA Astrophysics Data System (ADS)

Sturlesi, Boaz; Grajower, Meir; Mazurski, Noa; Levy, Uriel

2018-03-01

We demonstrate the design, fabrication, and experimental characterization of a long range surface plasmon polariton waveguide that is compatible with complementary metal-oxide semiconductor backend technology. The structure consists of a thin aluminum strip embedded in amorphous silicon. This configuration offers a symmetric environment in which surface plasmon polariton modes undergo minimal loss. Furthermore, the plasmonic mode profile matches the modes of the dielectric (amorphous silicon) waveguide, thus allowing efficient coupling between silicon photonics and plasmonic platforms. The propagation length of the plasmonic waveguide was measured to be about 27 μm at the telecom wavelength around 1550 nm, in good agreement with numerical simulations. As such, the waveguide features both tight mode confinement and decent propagation length. On top of its photonic properties, placing a metal within the structure may also allow for additional functionalities such as photo-detection, thermo-optic tuning, and electro-optic control to be implemented.

Neurite guidance and three-dimensional confinement via compliant semiconductor scaffolds.

PubMed

Cavallo, Francesca; Huang, Yu; Dent, Erik W; Williams, Justin C; Lagally, Max G

2014-12-23

Neurons are often cultured in vitro on a flat, open, and rigid substrate, a platform that does not reflect well the native microenvironment of the brain. To address this concern, we have developed a culturing platform containing arrays of microchannels, formed in a crystalline-silicon nanomembrane (NM) resting on polydimethylsiloxane; this platform will additionally enable active sensing and stimulation at the local scale, via devices fabricated in the silicon. The mechanical properties of the composite Si/compliant substrate nanomaterial approximate those of neural tissue. The microchannels, created in the NM by strain engineering, demonstrate strong guidance of neurite outgrowth. Using plasma techniques, we developed a means to coat just the inside surface of these channels with an adhesion promoter (poly-d-lysine). For NM channels with openings larger than the cross-sectional area of a single axon, strong physical confinement and guidance of axons through the channels are observed. Imaging of axons that grow in channels with openings that approximate the size of an axon suggests that a tight seal exists between the cell membrane and the inner surface of the channel, mimicking a myelin sheath. Such a tight seal of the cell membrane with the channel surface would make this platform an attractive candidate for future neuronal repair. Results of measurements of impedance and photoluminescence of bare NM channels are comparable to those on a flat NM, demonstrating electrical and optical modalities of our platform and suggesting that this scaffold can be expanded for active sensing and monitoring of neuron cellular processes in conditions in which they exist naturally.

TriPleX: a versatile dielectric photonic platform

NASA Astrophysics Data System (ADS)

Wörhoff, Kerstin; Heideman, René G.; Leinse, Arne; Hoekman, Marcel

2015-04-01

Photonic applications based on planar waveguide technology impose stringent requirements on properties such as optical propagation losses, light coupling to optical fibers, integration density, as well as on reliability and reproducibility. The latter is correlated to a high level of control of the refractive index and waveguide geometry. In this paper, we review a versatile dielectric waveguide platform, called TriPleX, which is based on alternating silicon nitride and silicon dioxide films. Fabrication with CMOS-compatible equipment based on low-pressure chemical vapor deposition enables the realization of stable material compositions being a prerequisite to the control of waveguide properties and modal shape. The transparency window of both materials allows for the realization of low-loss waveguides over a wide wavelength range (400 nm-2.35 μm). Propagation losses as low as 5×10-4 dB/cm are reported. Three basic geometries (box shell, double stripe, and filled box) can be distinguished. A specific tapering technology is developed for on-chip, low-loss (<0.1 dB) spotsize convertors, allowing for combining efficient fiber to chip coupling with high-contrast waveguides required for increased functional complexity as well as for hybrid integration with other photonic platforms such as InP and SOI. The functionality of the TriPleX platform is captured by verified basic building blocks. The corresponding library and associated design kit is available for multi-project wafer (MPW) runs. Several applications of this platform technology in communications, biomedicine, sensing, as well as a few special fields of photonics are treated in more detail.

Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

PubMed Central

Coucheron, David A.; Fokine, Michael; Patil, Nilesh; Breiby, Dag Werner; Buset, Ole Tore; Healy, Noel; Peacock, Anna C.; Hawkins, Thomas; Jones, Max; Ballato, John; Gibson, Ursula J.

2016-01-01

Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core. PMID:27775066

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

NASA Astrophysics Data System (ADS)

Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

2017-06-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

Near-self-imaging cavity for three-mode optoacoustic parametric amplifiers using silicon microresonators.

PubMed

Liu, Jian; Torres, F A; Ma, Yubo; Zhao, C; Ju, L; Blair, D G; Chao, S; Roch-Jeune, I; Flaminio, R; Michel, C; Liu, K-Y

2014-02-10

Three-mode optoacoustic parametric amplifiers (OAPAs), in which a pair of photon modes are strongly coupled to an acoustic mode, provide a general platform for investigating self-cooling, parametric instability and very sensitive transducers. Their realization requires an optical cavity with tunable transverse modes and a high quality-factor mirror resonator. This paper presents the design of a table-top OAPA based on a near-self-imaging cavity design, using a silicon torsional microresonator. The design achieves a tuning coefficient for the optical mode spacing of 2.46  MHz/mm. This allows tuning of the mode spacing between amplification and self-cooling regimes of the OAPA device. Based on demonstrated resonator parameters (frequencies ∼400  kHz and quality-factors ∼7.5×10(5) we predict that the OAPA can achieve parametric instability with 1.6 μW of input power and mode cooling by a factor of 1.9×10(4) with 30 mW of input power.

Rapid bio-patterning method based on the fabrication of PEG microstructures and layer-by-layer polymeric thin film

NASA Astrophysics Data System (ADS)

Shim, Hyun-Woo; Lee, Ji-Hye; Choi, Chang-Hyoung; Song, Hwan-Moon; Kim, Bo-Yeol; Kim, Dong-Pyo; Lee, Chang-Soo

2007-12-01

The patterning of biomolecules in well-defined microstructures is critical issue for the development of biosensors and biochips. However, the fabrication of microstructures with well-ordered and spatially discrete forms to provide the patterned surface for the immobilization of biomolecules is difficult because of the lack of distinct physical and chemical barriers separating patterns. This study present rapid biomolecule patterning using micromolding in capillaries (MIMIC), soft-lithographic fabrication of PEG microstructures for prevention of nonspecific binding as a biological barrier, and self assembled polymeric thin film for efficient immobilization of proteins or cells. For the proof of concept, protein (FITC-BSA), bacteria (E.coli BL21-pET23b-GFP) were used for biomolecules patterning on polyelectrolyte coated surface within PEG microstructures. The novel approach of MIMIC combined with LbL coating provides a general platform for patterning a broad range of materials because it can be easily applied to various substrates such as glass, silicon, silicon dioxide, and polymers.

Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

NASA Astrophysics Data System (ADS)

Coucheron, David A.; Fokine, Michael; Patil, Nilesh; Breiby, Dag Werner; Buset, Ole Tore; Healy, Noel; Peacock, Anna C.; Hawkins, Thomas; Jones, Max; Ballato, John; Gibson, Ursula J.

2016-10-01

Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core.

PtSi gimbal-based FLIR for airborne applications

NASA Astrophysics Data System (ADS)

Wallace, Joseph; Ornstein, Itzhak; Nezri, M.; Fryd, Y.; Bloomberg, Steve; Beem, S.; Bibi, B.; Hem, S.; Perna, Steve N.; Tower, John R.; Lang, Frank B.; Villani, Thomas S.; McCarthy, D. R.; Stabile, Paul J.

1997-08-01

A new gimbal-based, FLIR camera for several types of airborne platforms has been developed. The FLIR is based on a PtSi on silicon technology: developed for high volume and minimum cost. The gimbal scans an area of 360 degrees in azimuth and an elevation range of plus 15 degrees to minus 105 degrees. It is stabilized to 25 (mu) Rad-rms. A combination of uniformity correction, defect substitution, and compact optics results in a long range, low cost FLIR for all low-speed airborne platforms.

SOI layout decomposition for double patterning lithography on high-performance computer platforms

NASA Astrophysics Data System (ADS)

Verstov, Vladimir; Zinchenko, Lyudmila; Makarchuk, Vladimir

2014-12-01

In the paper silicon on insulator layout decomposition algorithms for the double patterning lithography on high performance computing platforms are discussed. Our approach is based on the use of a contradiction graph and a modified concurrent breadth-first search algorithm. We evaluate our technique on 45 nm Nangate Open Cell Library including non-Manhattan geometry. Experimental results show that our soft computing algorithms decompose layout successfully and a minimal distance between polygons in layout is increased.

Embracing the quantum limit in silicon computing.

PubMed

Morton, John J L; McCamey, Dane R; Eriksson, Mark A; Lyon, Stephen A

2011-11-16

Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer. © 2011 Macmillan Publishers Limited. All rights reserved

All-optical control of light on a graphene-on-silicon nitride chip using thermo-optic effect.

PubMed

Qiu, Ciyuan; Yang, Yuxing; Li, Chao; Wang, Yifang; Wu, Kan; Chen, Jianping

2017-12-06

All-optical signal processing avoids the conversion between optical signals and electronic signals and thus has the potential to achieve a power efficient photonic system. Micro-scale all-optical devices for light manipulation are the key components in the all-optical signal processing and have been built on the semiconductor platforms (e.g., silicon and III-V semiconductors). However, the two-photon absorption (TPA) effect and the free-carrier absorption (FCA) effect in these platforms deteriorate the power handling and limit the capability to realize complex functions. Instead, silicon nitride (Si 3 N 4 ) provides a possibility to realize all-optical large-scale integrated circuits due to its insulator nature without TPA and FCA. In this work, we investigate the physical dynamics of all-optical control on a graphene-on-Si 3 N 4 chip based on thermo-optic effect. In the experimental demonstration, a switching response time constant of 253.0 ns at a switching energy of ~50 nJ is obtained with a device dimension of 60 μm × 60 μm, corresponding to a figure of merit (FOM) of 3.0 nJ mm. Detailed coupled-mode theory based analysis on the thermo-optic effect of the device has been performed.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Dielectrophoretic lab-on-CMOS platform for trapping and manipulation of cells.

PubMed

Park, Kyoungchul; Kabiri, Shideh; Sonkusale, Sameer

2016-02-01

Trapping and manipulation of cells are essential operations in numerous studies in biology and life sciences. We discuss the realization of a Lab-on-a-Chip platform for dielectrophoretic trapping and repositioning of cells and microorganisms on a complementary metal oxide semiconductor (CMOS) technology, which we define here as Lab-on-CMOS (LoC). The LoC platform is based on dielectrophoresis (DEP) which is the force experienced by any dielectric particle including biological entities in non-uniform AC electrical field. DEP force depends on the permittivity of the cells, its size and shape and also on the permittivity of the medium and therefore it enables selective targeting of cells based on their phenotype. In this paper, we address an important matter that of electrode design for DEP for which we propose a three-dimensional (3D) octapole geometry to create highly confined electric fields for trapping and manipulation of cells. Conventional DEP-based platforms are implemented stand-alone on glass, silicon or polymers connected to external infrastructure for electronics and optics, making it bulky and expensive. In this paper, the use of CMOS as a platform provides a pathway to truly miniaturized lab-on-CMOS or LoC platform, where DEP electrodes are designed using built-in multiple metal layers of the CMOS process for effective trapping of cells, with built-in electronics for in-situ impedance monitoring of the cell position. We present electromagnetic simulation results of DEP force for this unique 3D octapole geometry on CMOS. Experimental results with yeast cells validate the design. These preliminary results indicate the promise of using CMOS technology for truly compact miniaturized lab-on-chip platform for cell biotechnology applications.

Subpicometer thermal shifts in silicon photonic micro-ring resonators with sol-gel claddings (Conference Presentation)

NASA Astrophysics Data System (ADS)

Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam M.; Himmelhuber, Roland; DeRose, Christopher T.; Pomerene, Andrew; Lentine, Tony L.; Norwood, Robert A.

2017-02-01

Electronic interconnects are reaching their limit in terms of speed, dimensions and permissible power consumption. This has been a major concern in data centers and large scale computing platforms, creating limits to their scalability especially with respect to power consumption. Silicon photonic-electronic integration is viewed as a viable alternative that enables reliability, high efficiency, low cost and small footprint. In particular, silicon with its high refractive index, has enabled the integration a many individual optical elements (ring resonators) in small areas. Though silicon has a high thermo-optic coefficient (1.8×10^-4/°C) compared to silica, small thermal fluctuations can affect the optical performance especially for WDM applications. Therefore, a passive athermal solution for silicon photonic devices is required in order to reduce thermal sensitivity and power consumption. We have achieved this goal by replacing the silica top cladding with negative thermo-optic coefficient (TOC) materials. While polymers and titanium dioxide(titania) have a negative TOC, polymers can't handle high temperature processing and titania needs very tight thickness control and expensive deposition under vacuum. In this work we propose to use a sol-gel inorganic-organic hybrid material that has the benefits of both worlds. We were able to find optimum curing conditions to athermalize ring resonators by studying various sol-gel curing times and curing temperatures. Our athermal rings operate in a wide temperature range from 5C - 100C with thermal shifts below 1pm/C and low loss. Furthermore, we demonstrate that our athermal approach does not deleteriously effect critical device parameters, such as insertion loss and resonator Q factors.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects

PubMed Central

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi

2015-01-01

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463

On-Chip, Amplification-Free Quantification of Nucleic Acid for Point-of-Care Diagnosis

NASA Astrophysics Data System (ADS)

Yen, Tony Minghung

This dissertation demonstrates three physical device concepts to overcome limitations in point-of-care quantification of nucleic acids. Enabling sensitive, high throughput nucleic acid quantification on a chip, outside of hospital and centralized laboratory setting, is crucial for improving pathogen detection and cancer diagnosis and prognosis. Among existing platforms, microarray have the advantages of being amplification free, low instrument cost, and high throughput, but are generally less sensitive compared to sequencing and PCR assays. To bridge this performance gap, this dissertation presents theoretical and experimental progress to develop a platform nucleic acid quantification technology that is drastically more sensitive than current microarrays while compatible with microarray architecture. The first device concept explores on-chip nucleic acid enrichment by natural evaporation of nucleic acid solution droplet. Using a micro-patterned super-hydrophobic black silicon array device, evaporative enrichment is coupled with nano-liter droplet self-assembly workflow to produce a 50 aM concentration sensitivity, 6 orders of dynamic range, and rapid hybridization time at under 5 minutes. The second device concept focuses on improving target copy number sensitivity, instead of concentration sensitivity. A comprehensive microarray physical model taking into account of molecular transport, electrostatic intermolecular interactions, and reaction kinetics is considered to guide device optimization. Device pattern size and target copy number are optimized based on model prediction to achieve maximal hybridization efficiency. At a 100-mum pattern size, a quantum leap in detection limit of 570 copies is achieved using black silicon array device with self-assembled pico-liter droplet workflow. Despite its merits, evaporative enrichment on black silicon device suffers from coffee-ring effect at 100-mum pattern size, and thus not compatible with clinical patient samples. The third device concept utilizes an integrated optomechanical laser system and a Cytop microarray device to reverse coffee-ring effect during evaporative enrichment at 100-mum pattern size. This method, named "laser-induced differential evaporation" is expected to enable 570 copies detection limit for clinical samples in near future. While the work is ongoing as of the writing of this dissertation, a clear research plan is in place to implement this method on microarray platform toward clinical sample testing for disease applications and future commercialization.

Non-blocking four-port optical router based on thermooptic silicon microrings

NASA Astrophysics Data System (ADS)

Dang, Pei-pei; Li, Cui-ting; Zheng, Wen-xue; Zheng, Chuan-tao; Wang, Yi-ding

2016-07-01

By using silicon-on-insulator (SOI) platform, 12 channel waveguides, and four parallel-coupling one-microring resonator routing elements, a non-blocking four-port optical router is proposed. Structure design and optimization are performed on the routing elements at 1 550 nm. At drop state with a power consumption of 0 mW, the insertion loss of the drop port is less than 1.12 dB, and the crosstalk between the two output ports is less than -28 dB; at through state with a power consumption of 22 mW, the insertion loss of the through port is less than 0.45 dB, and the crosstalk between the two output ports is below -21 dB. Routing topology and function are demonstrated for the four-port optical router. The router can work at nine non-blocking routing states using the thermo-optic (TO) effect of silicon for tuning the resonance of each switching element. Detailed characterizations are presented, including output spectrum, insertion loss, and crosstalk. According to the analysis on all the data links of the router, the insertion loss is within the range of 0.13—3.36 dB, and the crosstalk is less than -19.46 dB. The router can meet the need of large-scale optical network-on-chip (ONoC).

Photovoltage field-effect transistors

NASA Astrophysics Data System (ADS)

Adinolfi, Valerio; Sargent, Edward H.

2017-02-01

The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III-V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers.

PubMed

Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe

2018-03-23

Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.

Silicon micro sensors as integrated readout platform for colorimetric and fluorescence based opto-chemical transducers

NASA Astrophysics Data System (ADS)

Will, Matthias; Martan, Tomas; Brodersen, Olaf

2011-09-01

Opto-chemical transducer almost offers unlimited possibilities for detection of physical quantities. New technologies and research show a steady increasing of publications in the area of sensoric principles. For transfer to real world applications the optical response has to be converted into an electrical signal. An exceptional opto chemical transducer loses the attraction if complex and expensive instruments for analysis are requires. Therefore, the readout system must be very compact and producible for low cost. In this presentation, the technology platform as a solution for these problems will be presented. We combine micro structuring of silicon, photodiode fabrication, chip in chip mounting and novel assembly technologies for creation of a flexible sensor platform. This flexible combination of technologies allows fabricating a family of planar optical remission sensors. With variation of design and modifications, we are able to detect colorimetric, fluorescent properties of an sensitive layer attached on the sensor surface. In our sensor with typical size of 6mm x 6mm x 1mm different emitting sources based on LED's or laser diodes, multiple detection cannels for the remitted light and also measurement of temperature are included. Based on these sensors we proof the concept by demonstrating sensors for oxygen, carbon dioxide and ammonia based on colorimetric and fluorescent changes in the transducer layer. In both configurations, LED's irradiated the sensitive polymer layer through a transparent substrate. The absorption or fluorescence properties of dyed polymer are changed by the chemical reaction and light response is detected by PIN diodes. The signal shift is analyzed by using a computer controlled evaluation board of own construction. Accuracy and reliability of the remission sensor system were verified and the whole sensor system was experimentally tested in the range of concentrations from 50 ppm up to 100 000 ppm for CO2 and O2 Furthermore, we develop concepts to use the sensor also for interferometric detection of layer properties and the combination with capacitive structures on the surface. This allows detecting of thickness or refractive index variation of layers in future.

Trace-gas Spectroscopy of Methane on a Silicon Photonic Chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Eric; Xiong, Chi; Martin, Yves

Recent advances in hybrid integrated silicon photonic (SiPh) technologies are enabling the migration of conventional free-space optical spectroscopic sensors onto a compact on-chip platform [1-3]. In addition to the small spatial footprint and power efficiency, we envision such sensors to be scalably manufactured using existing CMOS-compatible foundry processes, thus providing disruptive SWaP-C (size, weight, power, and cost) benefits in contrast to commercially available optical sensors. Initial demonstration of evanescent TDLAS (tunable diode laser absorption spectroscopy) of methane (CH4) on a passive SiPh waveguide has indicated minimum fractional absorption of (αL)min = 3.3×10-5 Hz-1/2, which is on-par with state-of-art open-path TDLASmore » sensor systems [4]. Given the general recent movement toward cleaner fuels, CH4 fugitive emissions monitoring is of significant interest given the extremely high radiative forcing potential [5]. For a nominal waveguide length of 30 cm with Γ = 25 % evanescent exposure, this corresponds to ~ 10 ppmv detection sensitivity at 1 s integration time, and further sensitivity enhancement is expected with even longer waveguides, as the laser RIN typically dominates our measurements at nominal waveguide lengths. Despite the excellent sensitivities for short-term integration periods, long-term measurements (> 10 s) are potentially limited on a silicon platform due to the high material thermo-optic coefficient, resulting in significant susceptibility of Fabry-Perot etalons to drift in the presence of even small (~ 1 mK) thermal fluctuations. To this end, customized spectral fitting algorithms have played a significant role in both fringe drift mitigation and peak detection fidelity (e.g. in the presence of a passing CH4 plume), which are crucial for enhancing long-term stability without the need for frequent sensor recalibration. A variety of spectral algorithms have been designed for this purpose, and details will be presented at the meeting.« less

Effects of macro- versus nanoporous silicon substrates on human aortic endothelial cell behavior

PubMed Central

2014-01-01

Human aortic endothelial cells play a key role in the pathogenesis of atherosclerosis, which is a common, progressive, and multifactorial disease that is the clinical endpoint of an inflammatory process and endothelial dysfunction. Study and development of new therapies against cardiovascular disease must be tested in vitro cell models, prior to be evaluated in vivo. To this aim, new cell culture platforms are developed that allow cells to grow and respond to their environment in a realistic manner. In this work, the cell adhesion and morphology of endothelial cells are investigated on functionalized porous silicon substrates with two different pore size configurations: macroporous and nanoporous silicon. Herein, we modified the surfaces of porous silicon substrates by aminopropyl triethoxysilane, and we studied how different pore geometries induced different cellular response in the cell morphology and adhesion. The cell growth over the surface of porous silicon becomes an attractive field, especially for medical applications. Surface properties of the biomaterial are associated with cell adhesion and as well as, with proliferation, migration and differentiation. PMID:25246859

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Silicone-based composite materials simulate breast tissue to be used as ultrasonography training phantoms.

PubMed

Ustbas, Burcin; Kilic, Deniz; Bozkurt, Ayhan; Aribal, Mustafa Erkin; Akbulut, Ozge

2018-08-01

A silicone-based composite breast phantom is fabricated to be used as an education model in ultrasonography training. A matrix of silicone formulations is tracked to mimic the ultrasonography and tactile response of human breast tissue. The performance of two different additives: (i) silicone oil and (ii) vinyl-terminated poly (dimethylsiloxane) (PDMS) are monitored by a home-made acoustic setup. Through the use of 75 wt% vinyl-terminated PDMS in two-component silicone elastomer mixture, a sound velocity of 1.29 ± 0.09 × 10 3  m/s and an attenuation coefficient of 12.99 ± 0.08 dB/cm-values those match closely to the human breast tissue-are measured with 5 MHz probe. This model can also be used for needle biopsy as well as for self-exam trainings. Herein, we highlight the fabrication of a realistic, durable, accessible, and cost-effective training platform that contains skin layer, inner breast tissue, and tumor masses. Copyright © 2018 Elsevier B.V. All rights reserved.

High speed analog-to-digital conversion with silicon photonics

NASA Astrophysics Data System (ADS)

Holzwarth, C. W.; Amatya, R.; Araghchini, M.; Birge, J.; Byun, H.; Chen, J.; Dahlem, M.; DiLello, N. A.; Gan, F.; Hoyt, J. L.; Ippen, E. P.; Kärtner, F. X.; Khilo, A.; Kim, J.; Kim, M.; Motamedi, A.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Ram, R. J.; Smith, H. I.; Zhou, G. R.; Spector, S. J.; Lyszczarz, T. M.; Geis, M. W.; Lennon, D. M.; Yoon, J. U.; Grein, M. E.; Schulein, R. T.; Frolov, S.; Hanjani, A.; Shmulovich, J.

2009-02-01

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

Design of a colorimetric sensing platform using reflection mode plasmonic colour filters

NASA Astrophysics Data System (ADS)

Mudachathi, Renilkumar; Tanaka, Takuo

2017-08-01

Plasmonic nano structures fabricated using inexpensive and abundant aluminum metal shows intense narrow reflection peaks with strong response to the external stimuli, provides a simple yet powerful detection mechanism that is well suited for the development of low cost and low power sensors, such as colorimetric sensors, which transduces external stimuli or environmental changes in to visible colour changes. Such low cost and disposable sensors have huge demands in the point-of-care and home health care diagnostic applications. We present the design of a colorimetric sensing platform based on reflection mode plasmonic colour filters on both silicon and glass substrate, which demonstrate a sharp colour change for varying ambient refractive index. The sensor is essentially a plasmonic metamaterial in which the aluminum square plate hovering on a PMMA nano pillar in the background of a perforated aluminum reflector forms the unit cell which is arranged periodically in a 2D square lattice. The meta-surface has two distinct absorption peaks in the visible region leaving a strong reflection band, which strongly responds to the ambient refractive index change, provides a means for the realization of low cost colorimetric sensing platform.

Recent Advances on Luminescent Enhancement-Based Porous Silicon Biosensors.

PubMed

Jenie, S N Aisyiyah; Plush, Sally E; Voelcker, Nicolas H

2016-10-01

Luminescence-based detection paradigms have key advantages over other optical platforms such as absorbance, reflectance or interferometric based detection. However, autofluorescence, low quantum yield and lack of photostability of the fluorophore or emitting molecule are still performance-limiting factors. Recent research has shown the need for enhanced luminescence-based detection to overcome these drawbacks while at the same time improving the sensitivity, selectivity and reducing the detection limits of optical sensors and biosensors. Nanostructures have been reported to significantly improve the spectral properties of the emitting molecules. These structures offer unique electrical, optic and magnetic properties which may be used to tailor the surrounding electrical field of the emitter. Here, the main principles behind luminescence and luminescence enhancement-based detections are reviewed, with an emphasis on europium complexes as the emitting molecule. An overview of the optical porous silicon microcavity (pSiMC) as a biosensing platform and recent proof-of-concept examples on enhanced luminescence-based detection using pSiMCs are provided and discussed.

A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

PubMed

Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

2008-02-01

Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides

NASA Astrophysics Data System (ADS)

Wei, Yuxin; Li, Guoyi; Hao, Yinlei; Li, Yubo; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2011-08-01

The undercut long-wave infrared (LWIR) waveguide components with air-gap beneath are analyzed and fabricated on the Si-wafer with simple manufacturing process. A 1 × 2 multimode interference (MMI) splitter based on this structure is presented and measured under the 10.6μm wavelength experimental setup. The uniformity of the MMI fabricated is 0.76 dB. The relationship among the output power, slab thickness and air-gap width is also fully discussed. Furthermore, undercut straight waveguides based on SOI platform are fabricated for propagation loss evaluation. Ways to reduce the loss are discussed either.

A Photostable Silicon Rhodamine Platform for Optical Voltage Sensing

PubMed Central

Huang, Yi-Lin; Walker, Alison S.; Miller, Evan W.

2015-01-01

This paper describes the design and synthesis of a photostable, far-red to near-infrared (NIR) platform for optical voltage sensing. We developed a new, sulfonated silicon rhodamine fluorophore and integrated it with a phenylenevinylene molecular wire to create a Berkeley Red Sensor of Transmembrane potential, or BeRST 1 (“burst”). BeRST 1 is the first member of a class of farred to NIR voltage sensitive dyes that make use of a photoinduced electron transfer (PeT) trigger for optical interrogation of membrane voltage. We show that BeRST 1 displays bright, membrane-localized fluorescence in living cells, high photostability, and excellent voltage sensitivity in neurons. Depolarization of the plasma membrane results in rapid fluorescence increases (24% ΔF/F per 100 mV). BeRST 1 can be used in conjunction with fluorescent stains for organelles, Ca2+ indicators, and voltage-sensitive fluorescent proteins. In addition, the red-shifted spectral profile of BeRST 1, relative to commonly employed optogenetic actuators like ChannelRhodopsin2 (ChR2), which require blue light, enables optical electrophysiology in neurons. The high speed, sensitivity, photostability and long-wavelength fluorescence profiles of BeRST 1 make it a useful platform for the non-invasive, optical dissection of neuronal activity. PMID:26237573

Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

NASA Astrophysics Data System (ADS)

Sacher, Wesley David

Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.

Microball-bearing-supported electrostatic micromachines with polymer dielectric films for electromechanical power conversion

NASA Astrophysics Data System (ADS)

Modafe, A.; Ghalichechian, N.; Frey, A.; Lang, J. H.; Ghodssi, R.

2006-09-01

This paper presents our latest research activities toward the development of electrostatic micromotors/microgenerators with a microball-bearing support mechanism and benzocyclobutene (BCB) low-k polymer insulating layers. The primary applications of these devices are long-range, high-speed micropositioning, high-speed micro pumping and micro power generation. In this paper, we present the development of the first generation of microball-bearing-supported micromachines. This device is a 6-phase, bottom-drive, linear, variable-capacitance micromotor. The design and fabrication of the linear micromotor, and characterization of the motor capacitance, force and motion in 3-phase and 6-phase excitation modes are presented. The micromotor consists of a silicon stator, a silicon slider and four stainless-steel microballs. The aligning force profile of the micromotor was extracted from simulated and measured capacitances of all phases. An average total aligning force of 0.27 mN with a maximum of 0.41 mN at 100 V dc was measured. The ac operation of the micromotor was verified by applying square-wave voltages and characterizing the slider motion. An average slider speed of 7.32 mm s-1 at 40 Hz and 120 V P-P was reached without losing the synchronization. The design, fabrication and characterization methods presented in this paper can be used as a technology platform for developing rotary micromachines.

Material platforms for spin-based photonic quantum technologies

NASA Astrophysics Data System (ADS)

Atatüre, Mete; Englund, Dirk; Vamivakas, Nick; Lee, Sang-Yun; Wrachtrup, Joerg

2018-05-01

A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light-matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light-matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light-matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors.

Fully suspended slot waveguide platform

NASA Astrophysics Data System (ADS)

Zhou, Wen; Cheng, Zhenzhou; Wu, Xinru; Sun, Xiankai; Tsang, Hon Ki

2018-02-01

A fully suspended slot waveguide (FSSWG) platform, including straight slot waveguides, 90° bends, high-Q racetrack resonators, and strip-to-slot mode converters, is demonstrated for broadband and low-loss operation in the mid-infrared spectral region. The proposed FSSWG platform has inherent merits of a broad spectral range of transparency which is limited only by the absorption of silicon, strong light-analyte interaction, good mechanical stability, and single lithography step fabrication process. By using asymmetric FSSWGs, the propagation loss, bending loss, and intrinsic optical Q factor are demonstrated to be 2.8 dB/cm, 0.15 dB/90°, and 12 600, respectively. The average conversion efficiency of a mode converter is 95.4% over a bandwidth of 170 nm and 97.0% at 2231 nm. The FSSWG platform would be promising for a long-range and cavity-enhanced light-analyte interaction.

Integrated programmable photonic filter on the silicon-on-insulator platform.

PubMed

Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

2014-12-29

We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

Hybrid III/V silicon photonic source with integrated 1D free-space beam steering.

PubMed

Doylend, J K; Heck, M J R; Bovington, J T; Peters, J D; Davenport, M L; Coldren, L A; Bowers, J E

2012-10-15

A chip-scale optical source with integrated beam steering is demonstrated. The chip was fabricated using the hybrid silicon platform and incorporates an on-chip laser, waveguide splitter, amplifiers, phase modulators, and surface gratings to comprise an optical phased array with beam steering across a 12° field of view in one axis. Tuning of the phased array is used to achieve 1.8°(steered axis)×0.6°(nonsteered axis) beam width with 7 dB background suppression for arbitrary beam direction within the field of view.

Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pisano, Albert P.

2013-04-26

This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

Ultralow drive voltage silicon traveling-wave modulator.

PubMed

Baehr-Jones, Tom; Ding, Ran; Liu, Yang; Ayazi, Ali; Pinguet, Thierry; Harris, Nicholas C; Streshinsky, Matt; Lee, Poshen; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

2012-05-21

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2006-02-01

This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (1 1 1) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (1 1 1) MOSBE (molded surface-micromachining and bulk etching release on (1 1 1) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

NASA Astrophysics Data System (ADS)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

NASA Astrophysics Data System (ADS)

Hsieh, I.-Wei

In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon photonics. It is the author's hope that the thesis would convey to its readers the significance and potential of this exciting emerging technology.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities.

PubMed

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F; Machiya, Hidenori; Htoon, Han; Doorn, Stephen K; Kato, Yuichiro K

2018-06-13

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10 7 Hz.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

DOE PAGES

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; ...

2015-06-30

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon,more » namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.« less

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE PAGES

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.; ...

2018-05-21

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

PubMed

Lee, Wook-Jae; Kim, Hyunseok; You, Jong-Bum; Huffaker, Diana L

2017-08-25

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm 2 , which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7 × 7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

Chemically Tunable Full Spectrum Optical Properties of 2D Silicon Telluride Nanoplates.

PubMed

Wang, Mengjing; Lahti, Gabriella; Williams, David; Koski, Kristie J

2018-06-07

Silicon telluride (Si 2 Te 3 ) is a two-dimensional, layered, p-type semiconductor that shows broad near-infrared photoluminescence. We show how, through various means of chemical modification, Si 2 Te 3 can have its optoelectronic properties modified in several independent ways without fundamentally altering the host crystalline lattice. Substitutional doping with Ge strongly redshifts the photoluminescence while substantially lowering the direct and indirect band gaps and altering the optical phonon modes. Intercalation with Ge introduces a sharp 4.3 eV ultraviolet resonance and shifts the bulk plasmon even while leaving the infrared response and band gaps virtually unchanged. Intercalation with copper strengthens the photoluminescence without altering its spectral shape. Thus silicon telluride is shown to be a chemically tunable platform of full spectrum optical properties promising for opto-electronic applications.

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization.

PubMed

Tran, Duy Phu; Pham, Thuy Thi Thanh; Wolfrum, Bernhard; Offenhäusser, Andreas; Thierry, Benjamin

2018-05-11

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.

Porous silicon and diatoms micro-shells: an example of inverse biomimetic

NASA Astrophysics Data System (ADS)

De Tommasi, Edoardo; Rea, Ilaria; Rendina, Ivo; De Stefano, Luca

2011-05-01

Porous silicon (PSi) is by far a very useful technological platform for optical monitoring of chemical and biological substances and due to its peculiar physical and morphological properties it is worldwide used in sensing experiments. On the other hand, we have discovered a natural material, the micro-shells of marine diatoms, ubiquitous unicellular algae, which are made of hydrated amorphous silica, but, most of all, show geometrical structures made of complex patterns of pores which are surprisingly similar to those of porous silicon. Moreover, under laser irradiation, this material is photoluminescent and the photoluminescence is very sensitive to the surrounding atmosphere, which means that the material can act as a transducer. Starting from our experience on PSi devices, we explore the optical and photonic properties of marine diatoms micro-shells in a sort of inverse biomimicry.

Apparatus for sequentially transporting containers

NASA Technical Reports Server (NTRS)

Hudgins, J. L. (Inventor)

1982-01-01

Apparatus for transferring and manipulating a plurality of containers in a sequence is disclosed including a mechanical manipulator arm having a gripping device which automatically picks up a container at a fixed pickup position P and transfers it to a processing station. At a processing station X, the container is loaded with silicon wafers and thereafter returned by the arm to the fixed position P at the pickup and return station Y. A plurality of the containers may be processed in sequence from the fixed pickup position by providing a movable carriage upon which container pedestal platforms are supported, at least one of which is an elevator platform. The platforms include abutments for properly positioning the containers for accurate pickup by the manipulator arm.

Dielectric Metasurface as a Platform for Spatial Mode Conversion in Nanoscale Waveguides.

PubMed

Ohana, David; Desiatov, Boris; Mazurski, Noa; Levy, Uriel

2016-12-14

We experimentally demonstrate a nanoscale mode converter that performs coupling between the first two transverse electric-like modes of a silicon-on-insulator waveguide. The device operates by introducing a nanoscale periodic perturbation in its effective refractive index along the propagation direction and a graded effective index profile along its transverse direction. The periodic perturbation provides phase matching between the modes, while the graded index profile, which is realized by the implementation of nanoscale dielectric metasurface consisting of silicon features that are etched into the waveguide taking advantage of the effective medium concept, provides the overlap between the modes. Following the device design and numerical analysis using three-dimensional finite difference time domain simulations, we have fabricated the device and characterized it by directly measuring the modal content using optical imaging microscopy. From these measurements, the mode purity is estimated to be 95% and the transmission relative to an unperturbed strip waveguide is as high as 88%. Finally, we extend this approach to accommodate for the coupling between photonic and plasmonic modes. Specifically, we design and numerically demonstrate photonic to plasmonic mode conversion in a hybrid waveguide in which photonic and surface plasmon polariton modes can be guided in the silicon core and in the silicon/metal interface, respectively. The same method can also be used for coupling between symmetric and antisymmetric plasmonic modes in metal-insulator-metal or insulator-metal-insulator structures. On the basis of the current demonstration, we believe that such nanoscale dielectric metasurface-based mode converters can now be realized and become an important building block in future nanoscale photonic and plasmonic devices. Furthermore, the demonstrated platform can be used for the implementation of other chip scale components such as splitters, combiners couplers, and more.

Integrated Optics for Planar imaging and Optical Signal Processing

NASA Astrophysics Data System (ADS)

Song, Qi

Silicon photonics is a subject of growing interest with the potential of delivering planar electro-optical devices with chip scale integration. Silicon-on-insulator (SOI) technology has provided a marvelous platform for photonics industry because of its advantages in integration capability in CMOS circuit and countless nonlinearity applications in optical signal processing. This thesis is focused on the investigation of planar imaging techniques on SOI platform and potential applications in ultra-fast optical signal processing. In the first part, a general review and background introduction about integrated photonics circuit and planar imaging technique are provided. In chapter 2, planar imaging platform is realized by a silicon photodiode on SOI chip. Silicon photodiode on waveguide provides a high numerical aperture for an imaging transceiver pixel. An erbium doped Y2O3 particle is excited by 1550nm Laser and the fluorescent image is obtained with assistance of the scanning system. Fluorescence image is reconstructed by using image de-convolution technique. Under photovoltaic mode, we use an on-chip photodiode and an external PIN photodiode to realize similar resolution as 5μm. In chapter 3, a time stretching technique is developed to a spatial domain to realize a 2D imaging system as an ultrafast imaging tool. The system is evaluated based on theoretical calculation. The experimental results are shown for a verification of system capability to imaging a micron size particle or a finger print. Meanwhile, dynamic information for a moving object is also achieved by correlation algorithm. In chapter 4, the optical leaky wave antenna based on SOI waveguide has been utilized for imaging applications and extensive numerical studied has been conducted. and the theoretical explanation is supported by leaky wave theory. The highly directive radiation has been obtained from the broadside with 15.7 dB directivity and a 3dB beam width of ΔØ 3dB ≈ 1.65° in free space environment when β -1 = 2.409 × 105/m, α=4.576 ×103/m. At the end, electronics beam-steering principle has been studied and the comprehensive model has been built to explain carrier transformation behavior in a PIN junction as individual silicon perturbation. Results show that 1019/cm3 is possible obtained with electron injection mechanism. Although the radiation modulation based on carrier injection of 1019/cm3 gives 0.5dB variation, resonant structure, such as Fabry Perrot Cavity, can be integrated with LOWAs to enhance modulation effect.

2D materials integrated in Si3N4 photonics platform

NASA Astrophysics Data System (ADS)

Faneca, Joaquin; Hogan, Benjamin T.; Torres Alonso, E.; Craciun, Monica; Baldycheva, Anna

2018-02-01

In this paper, we discuss a back-end CMOS fabrication process for the large-scale integration of 2D materials on SOI (siliconon-insulator) platform and present a complete theoretical study of the change in the effective refractive index of 2D materialsenabled silicon nitride waveguide structures. The chemical vapour deposition (CVD) and liquid exfoliation fabrication methods are described for the fabrication of graphene, WS2 and MoS2 thin films. Finite-difference frequency-domain (FDFD) approach and the Transfer Matrix Method were used in order to mathematically describe these structures. The introduction of thin films of 2D material onto Si3N4 waveguide structures allows manipulation of the optical characteristics to a high degree of precision by varying the Fermi-level through the engineering of the number of atomically thin layers or by electrical tuning, for example. Based on the proposed tuning approach, designs of graphene, WS2 and MoS2 enabled Si3N4 micro-ring structures are presented for the visible and NIR range, which demonstrate versatility and desirable properties for a wide range of applications, such as bio-chemical sensing and optical communications.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Multiplex detection of pathogen biomarkers in human blood, serum, and saliva using silicon photonic microring resonators

NASA Astrophysics Data System (ADS)

Estrada, I. A.; Burlingame, R. W.; Wang, A. P.; Chawla, K.; Grove, T.; Wang, J.; Southern, S. O.; Iqbal, M.; Gunn, L. C.; Gleeson, M. A.

2015-05-01

Genalyte has developed a multiplex silicon photonic chip diagnostics platform (MaverickTM) for rapid detection of up to 32 biological analytes from a drop of sample in just 10 to 20 minutes. The chips are manufactured with waveguides adjacent to ring resonators, and probed with a continuously variable wavelength laser. A shift in the resonant wavelength as mass binds above the ring resonators is measured and is directly proportional to the amount of bound macromolecules. We present here the ability to multiplex the detection of hemorrhagic fever antigens in whole blood, serum, and saliva in a 16 minute assay. Our proof of concept testing of a multiplex antigencapture chip has the ability to detect Zaire Ebola (ZEBOV) recombinant soluble glycoprotein (rsGP), Marburg virus (MARV) Angola recombinant glycoprotein (rGP) and dengue nonstructural protein I (NS1). In parallel, detection of 2 malaria antigens has proven successful, but has yet to be incorporated into multiplex with the others. Each assay performs with sensitivity ranging from 1.6 ng/ml to 39 ng/ml depending on the antigen detected, and with minimal cross-reactivity.

Smart Sensor Systems for Aerospace Applications: From Sensor Development to Application Testing

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J. C.; Dungan, L. K.; Ward, B. J.; Rowe, S.; Williams, J.; Makel, D. B.; Liu, C. C.; Chang, C. W.

2008-01-01

The application of Smart Sensor Systems for aerospace applications is a multidisciplinary process consisting of sensor element development, element integration into Smart Sensor hardware, and testing of the resulting sensor systems in application environments. This paper provides a cross-section of these activities for multiple aerospace applications illustrating the technology challenges involved. The development and application testing topics discussed are: 1) The broadening of sensitivity and operational range of silicon carbide (SiC) Schottky gas sensor elements; 2) Integration of fire detection sensor technology into a "Lick and Stick" Smart Sensor hardware platform for Crew Exploration Vehicle applications; 3) Extended testing for zirconia based oxygen sensors in the basic "Lick and Stick" platform for environmental monitoring applications. It is concluded that that both core sensor platform technology and a basic hardware platform can enhance the viability of implementing smart sensor systems in aerospace applications.

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

PubMed

Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

2017-12-26

The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Reconfigurable visible nanophotonic switch for optogenetic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mohanty, Aseema; Li, Qian; Tadayon, Mohammad Amin; Bhatt, Gaurang R.; Cardenas, Jaime; Miller, Steven A.; Kepecs, Adam; Lipson, Michal

2017-02-01

High spatiotemporal resolution deep-brain optical excitation for optogenetics would enable activation of specific neural populations and in-depth study of neural circuits. Conventionally, a single fiber is used to flood light into a large area of the brain with limited resolution. The scalability of silicon photonics could enable neural excitation over large areas with single-cell resolution similar to electrical probes. However, active control of these optical circuits has yet to be demonstrated for optogenetics. Here we demonstrate the first active integrated optical switch for neural excitation at 473 nm, enabling control of multiple beams for deep-brain neural stimulation. Using a silicon nitride waveguide platform, we develop a cascaded Mach-Zehnder interferometer (MZI) network located outside the brain to direct light to 8 different grating emitters located at the tip of the neural probe. We use integrated platinum microheaters to induce a local thermo-optic phase shift in the MZI to control the switch output. We measure an ON/OFF extinction ratio of >8dB for a single switch and a switching speed of 20 microseconds. We characterize the optical output of the switch by imaging its excitation of fluorescent dye. Finally, we demonstrate in vivo single-neuron optical activation from different grating emitters using a fully packaged device inserted into a mouse brain. Directly activated neurons showed robust spike firing activities with low first-spike latency and small jitter. Active switching on a nanophotonic platform is necessary for eventually controlling highly-multiplexed reconfigurable optical circuits, enabling high-resolution optical stimulation in deep-brain regions.

Co-integrating plasmonics with Si3N4 photonics towards a generic CMOS compatible PIC platform for high-sensitivity multi-channel biosensors: the H2020 PlasmoFab approach (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tsiokos, Dimitris M.; Dabos, George; Ketzaki, Dimitra; Weeber, Jean-Claude; Markey, Laurent; Dereux, Alain; Giesecke, Anna Lena; Porschatis, Caroline; Chmielak, Bartos; Wahlbrink, Thorsten; Rochracher, Karl; Pleros, Nikos

2017-05-01

Silicon photonics meet most fabrication requirements of standard CMOS process lines encompassing the photonics-electronics consolidation vision. Despite this remarkable progress, further miniaturization of PICs for common integration with electronics and for increasing PIC functional density is bounded by the inherent diffraction limit of light imposed by optical waveguides. Instead, Surface Plasmon Polariton (SPP) waveguides can guide light at sub-wavelength scales at the metal surface providing unique light-matter interaction properties, exploiting at the same time their metallic nature to naturally integrate with electronics in high-performance ASPICs. In this article, we demonstrate the main goals of the recently introduced H2020 project PlasmoFab towards addressing the ever increasing needs for low energy, small size and high performance mass manufactured PICs by developing a revolutionary yet CMOS-compatible fabrication platform for seamless co-integration of plasmonics with photonic and supporting electronic. We demonstrate recent advances on the hosting SiN photonic hosting platform reporting on low-loss passive SiN waveguide and Grating Coupler circuits for both the TM and TE polarization states. We also present experimental results of plasmonic gold thin-film and hybrid slot waveguide configurations that can allow for high-sensitivity sensing, providing also the ongoing activities towards replacing gold with Cu, Al or TiN metal in order to yield the same functionality over a CMOS metallic structure. Finally, the first experimental results on the co-integrated SiN+plasmonic platform are demonstrated, concluding to an initial theoretical performance analysis of the CMOS plasmo-photonic biosensor that has the potential to allow for sensitivities beyond 150000nm/RIU.

Widened photonic functionality of asymmetric high-index contrast/photonic crystal gratings

NASA Astrophysics Data System (ADS)

Nguyen, Hai Son; Dubois, Florian; Letartre, Xavier; Leclercq, Jean-Louis; Seassal, Christian; Viktorovitch, Pierre

2016-03-01

In this presentation we emphasize that, within the variety of parameters usable for the design of HCGs, the transverse (vertical) symmetry properties of HCGs provide a power-full joystick for the dispersion engineering of guided mode resonances. We concentrate on asymmetric HCGs designed to accommodate guided mode resonances with ultra-flat zero-curvature dispersion characteristics (or photons with ultra-heavy effective mass), as well as with Dirac cone shaped linear dispersion characteristics. Examples of the great potential of this family of asymmetric HCGs will include the development of a platform for polaritonic devices and the production of micro-lasers particularly suited for hybrid III-V / silicon heterogeneous photonic integration, along CMOS compatible technological schemes.

RNAi functionalized scaffold for scarless skin regeneration

PubMed Central

Liu, Xing; Ma, Lie; Gao, Changyou

2013-01-01

Combination of a 3-D scaffold with the emerging RNA interference (RNAi) technique represents the latest paradigm of regenerative medicine. In our recent paper “RNAi functionalized collagen-chitosan/silicone membrane bilayer dermal equivalent for full-thickness skin regeneration with inhibited scarring” in the journal Biomaterials, we not only demonstrated a 3-D system for siRNA sustained delivery, but also presented a comprehensive in vivo study by targeting a vital problem in skin regeneration: scarring. It is expected that further development of this kind of RNAi functionalized scaffold can provide a better platform for directing cell fates by integrating the “down-regulating” biomolecular cues into the cellular microenvironment, leading to the complete functional regeneration of skin. PMID:23811756

Ultrasound-driven Megahertz Faraday Waves for Generation of Monodisperse Micro Droplets and Applications

NASA Astrophysics Data System (ADS)

Tsai, Chen S.; Mao, Rong W.; Lin, Shih K.; Tsai, Shirley C.; Boss, Gerry; Brenner, Matt; Smaldone, Gerry; Mahon, Sari; Shahverdi, Kaveh; Zhu, Yun

Our theoretical findings on instability of Faraday waves at megahertz (MHz) drive frequency and realization of silicon-based MHz multiple-Fourier horn ultrasonic nozzles (MFHUNs) together have enabled generation of mono-disperse droplets of controllable diameter (2.5-6.0 μm) at very low electrical drive power (<0.5 Watt). The resulting battery-run clogging-free droplet generator has imminent application to pulmonary (inhalation) drug delivery and other potential applications. Here an update of advances on analysis and design of the MHz MFHUNs and the underlying physical mechanism for generation of mono-disperse micro droplets, and the nebulizer platform for application to detoxification of cyanide poisoning are presented.

Microfluidic assembly of monodisperse multistage pH-responsive polymer/porous silicon composites for precisely controlled multi-drug delivery.

PubMed

Liu, Dongfei; Zhang, Hongbo; Herranz-Blanco, Bárbara; Mäkilä, Ermei; Lehto, Vesa-Pekka; Salonen, Jarno; Hirvonen, Jouni; Santos, Hélder A

2014-05-28

We report an advanced drug delivery platform for combination chemotherapy by concurrently incorporating two different drugs into microcompoistes with ratiometric control over the loading degree. Atorvastatin and celecoxib were selected as model drugs due to their different physicochemical properties and synergetic effect on colorectal cancer prevention and inhibition. To be effective in colorectal cancer prevention and inhibition, the produced microcomposite contained hypromellose acetate succinate, which is insoluble in acidic conditions but highly dissolving at neutral or alkaline pH conditions. Taking advantage of the large pore volume of porous silicon (PSi), atorvastatin was firstly loaded into the PSi matrix, and then encapsulated into the pH-responsive polymer microparticles containing celecoxib by microfluidics in order to obtain multi-drug loaded polymer/PSi microcomposites. The prepared microcomposites showed monodisperse size distribution, multistage pH-response, precise ratiometric controlled loading degree towards the simultaneously loaded drug molecules, and tailored release kinetics of the loaded cargos. This attractive microcomposite platform protects the payloads from being released at low pH-values, and enhances their release at higher pH-values, which can be further used for colon cancer prevention and treatment. Overall, the pH-responsive polymer/PSi-based microcomposite can be used as a universal platform for the delivery of different drug molecules for combination therapy. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

NASA Astrophysics Data System (ADS)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

Membrane-on-a-chip: microstructured silicon/silicon-dioxide chips for high-throughput screening of membrane transport and viral membrane fusion.

PubMed

Kusters, Ilja; van Oijen, Antoine M; Driessen, Arnold J M

2014-04-22

Screening of transport processes across biological membranes is hindered by the challenge to establish fragile supported lipid bilayers and the difficulty to determine at which side of the membrane reactants reside. Here, we present a method for the generation of suspended lipid bilayers with physiological relevant lipid compositions on microstructured Si/SiO2 chips that allow for high-throughput screening of both membrane transport and viral membrane fusion. Simultaneous observation of hundreds of single-membrane channels yields statistical information revealing population heterogeneities of the pore assembly and conductance of the bacterial toxin α-hemolysin (αHL). The influence of lipid composition and ionic strength on αHL pore formation was investigated at the single-channel level, resolving features of the pore-assembly pathway. Pore formation is inhibited by a specific antibody, demonstrating the applicability of the platform for drug screening of bacterial toxins and cell-penetrating agents. Furthermore, fusion of H3N2 influenza viruses with suspended lipid bilayers can be observed directly using a specialized chip architecture. The presented micropore arrays are compatible with fluorescence readout from below using an air objective, thus allowing high-throughput screening of membrane transport in multiwell formats in analogy to plate readers.

Flexible copper-indium-diselenide films and devices for space applications

NASA Technical Reports Server (NTRS)

Armstrong, J. H.; Pistole, C. O.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

1991-01-01

With the ever increasing demands on space power systems, it is imperative that low cost, lightweight, reliable photovoltaics be developed. One avenue of pursuit for future space power applications is the use of low cost, lightweight flexible PV cells and arrays. Most work in this area assumes the use of flexible amorphous silicon (a-Si), despite its inherent instability and low efficiencies. However, polycrystalline thin film PV such as copper-indium-diselenide (CIS) are inherently more stable and exhibit better performance than a-Si. Furthermore, preliminary data indicate that CIS also offers exciting properties with respect to space applications. However, CIS has only heretofore only produced on rigid substrates. The implications of flexible CIS upon present and future space power platforms was explored. Results indicate that space qualified CIS can dramatically reduce the cost of PV, and in most cases, can be substituted for silicon (Si) based on end-of-life (EOL) estimations. Furthermore, where cost is a prime consideration, CIS can become cost effective than gallium arsenide (GaAs) in some applications. Second, investigations into thin film deposition on flexible substrates were made, and data from these tests indicate that fabrication of flexible CIS devices is feasible. Finally, data is also presented on preliminary TCO/CdS/CuInSe2/Mo devices.

Si-based optical I/O for optical memory interface

NASA Astrophysics Data System (ADS)

Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

2012-01-01

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

Three-Dimensional Multiscale, Multistable, and Geometrically Diverse Microstructures with Tunable Vibrational Dynamics Assembled by Compressive Buckling.

PubMed

Ning, Xin; Wang, Heling; Yu, Xinge; Soares, Julio A N T; Yan, Zheng; Nan, Kewang; Velarde, Gabriel; Xue, Yeguang; Sun, Rujie; Dong, Qiyi; Luan, Haiwen; Lee, Chan Mi; Chempakasseril, Aditya; Han, Mengdi; Wang, Yiqi; Li, Luming; Huang, Yonggang; Zhang, Yihui; Rogers, John

2017-04-11

Microelectromechanical systems remain an area of significant interest in fundamental and applied research due to their wide ranging applications. Most device designs, however, are largely two-dimensional and constrained to only a few simple geometries. Achieving tunable resonant frequencies or broad operational bandwidths requires complex components and/or fabrication processes. The work presented here reports unusual classes of three-dimensional (3D) micromechanical systems in the form of vibratory platforms assembled by controlled compressive buckling. Such 3D structures can be fabricated across a broad range of length scales and from various materials, including soft polymers, monocrystalline silicon, and their composites, resulting in a wide scope of achievable resonant frequencies and mechanical behaviors. Platforms designed with multistable mechanical responses and vibrationally de-coupled constituent elements offer improved bandwidth and frequency tunability. Furthermore, the resonant frequencies can be controlled through deformations of an underlying elastomeric substrate. Systematic experimental and computational studies include structures with diverse geometries, ranging from tables, cages, rings, ring-crosses, ring-disks, two-floor ribbons, flowers, umbrellas, triple-cantilever platforms, and asymmetric circular helices, to multilayer constructions. These ideas form the foundations for engineering designs that complement those supported by conventional, microelectromechanical systems, with capabilities that could be useful in systems for biosensing, energy harvesting and others.

Development of an electro-responsive platform for the controlled transfection of mammalian cells

NASA Astrophysics Data System (ADS)

Hook, Andrew L.; Thissen, Helmut W.; Hayes, Jason P.; Voelcker, Nicolas H.

2005-02-01

The recent development of living microarrays as novel tools for the analysis of gene expression in an in-situ environment promises to unravel gene function within living organisms. In order to significantly enhance microarray performance, we are working towards electro-responsive DNA transfection chips. This study focuses on the control of DNA adsorption and desorption by appropriate surface modification of highly doped p++ silicon. Silicon was modified by plasma polymerisation of allylamine (ALAPP), a non-toxic surface that sustains cell growth. Subsequent high surface density grafting of poly(ethylene oxide) formed a layer resistant to biomolecule adsorption and cell attachment. Spatially controlled excimer laser ablation of the surface produced micron resolution patterns of re-exposed plasma polymer whilst the rest of the surface remained non-fouling. We observed electro-stimulated preferential adsorption of DNA to the ALAPP surface and subsequent desorption by the application of a negative bias. Cell culture experiments with HEK 293 cells demonstrated efficient and controlled transfection of cells using the expression of green fluorescent protein as a reporter. Thus, these chemically patterned surfaces are promising platforms for use as living microarrays.

Probing low noise at the MOS interface with a spin-orbit qubit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce amore » spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems« less

A CMOS silicon spin qubit

PubMed Central

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.

2016-01-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. PMID:27882926

Impact of VLSI/VHSIC on satellite on-board signal processing

NASA Astrophysics Data System (ADS)

Aanstoos, J. V.; Ruedger, W. H.; Snyder, W. E.; Kelly, W. L.

Forecasted improvements in IC fabrication techniques, such as the use of X-ray lithography, are expected to yield submicron circuit feature sizes within the decade of the 1980s. As dimensions decrease, reliability, cost, speed, power consumption and density improvements will be realized which have a significant impact on the capabilities of onboard spacecraft signal processing functions. This will in turn result in increases of the intelligence that may be deployed on spaceborne remote sensing platforms. Among programs oriented toward such goals are the silicon-based Very High Speed Integrated Circuit (VHSIC) researches sponsored by the U.S. Department of Defense, and efforts toward the development of GaAs devices which will compete with silicon VLSI technology for future applications. GaAs has an electron mobility which is five to six times that of silicon, and promises commensurate computation speed increases under low field conditions.

A Plasmonic based Ultracompact Polarization Beam Splitter on Silicon-on-Insulator Waveguides

PubMed Central

Tan, Qilong; Huang, Xuguang; Zhou, Wen; Yang, Kun

2013-01-01

An ultracompact polarization beam splitter (PBS) is designed on silicon-on-insulator (SOI) platform based on the localized surface plasmons (LSPs) excited by particular polarization light. The device uses nanoscale silver cylinders as the polarization selection between two silicon waveguides of a directional coupler. The transverse-magnetic (TM) polarization light excites localized surface plasmons and is coupled into the cross port of the directional coupler with a low insert loss, while the transverse-electric (TE) polarization light is under restriction. The PBS has a coupling layer with 50 nm width and 1.1 μm length supporting broadband operation. The simulation calculations show that 22.06dB and 23.06dB of extinction ratios for the TE and TM polarizations were obtained, together with insertion losses of 0.09dB and 0.40dB. PMID:23856635

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

PubMed Central

Wolfrum, Bernhard; Thierry, Benjamin

2018-01-01

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs’ promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology. PMID:29751688

Wafer scale formation of monocrystalline silicon-based Mie resonators via silicon-on-insulator dewetting.

PubMed

Abbarchi, Marco; Naffouti, Meher; Vial, Benjamin; Benkouider, Abdelmalek; Lermusiaux, Laurent; Favre, Luc; Ronda, Antoine; Bidault, Sébastien; Berbezier, Isabelle; Bonod, Nicolas

2014-11-25

Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.

Self-assembled single-crystal silicon circuits on plastic

PubMed Central

Stauth, Sean A.; Parviz, Babak A.

2006-01-01

We demonstrate the use of self-assembly for the integration of freestanding micrometer-scale components, including single-crystal, silicon field-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates. Preferential self-assembly of multiple microcomponent types onto a common platform is achieved through complementary shape recognition and aided by capillary, fluidic, and gravitational forces. We outline a microfabrication process that yields single-crystal, silicon FETs in a freestanding, powder-like collection for use with self-assembly. Demonstrations of self-assembled FETs on plastic include logic inverters and measured electron mobility of 592 cm2/V-s. Finally, we extend the self-assembly process to substrates each containing 10,000 binding sites and realize 97% self-assembly yield within 25 min for 100-μm-sized elements. High-yield self-assembly of micrometer-scale functional devices as outlined here provides a powerful approach for production of macroelectronic systems. PMID:16968780

A CMOS silicon spin qubit

NASA Astrophysics Data System (ADS)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A CMOS silicon spin qubit.

PubMed

Maurand, R; Jehl, X; Kotekar-Patil, D; Corna, A; Bohuslavskyi, H; Laviéville, R; Hutin, L; Barraud, S; Vinet, M; Sanquer, M; De Franceschi, S

2016-11-24

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A scalable silicon photonic chip-scale optical switch for high performance computing systems.

PubMed

Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

2013-12-30

This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

PubMed

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Nanoporous Anodic Alumina: A Versatile Platform for Optical Biosensors

PubMed Central

Santos, Abel; Kumeria, Tushar; Losic, Dusan

2014-01-01

Nanoporous anodic alumina (NAA) has become one of the most promising nanomaterials in optical biosensing as a result of its unique physical and chemical properties. Many studies have demonstrated the outstanding capabilities of NAA for developing optical biosensors in combination with different optical techniques. These results reveal that NAA is a promising alternative to other widely explored nanoporous platforms, such as porous silicon. This review is aimed at reporting on the recent advances and current stage of development of NAA-based optical biosensing devices. The different optical detection techniques, principles and concepts are described in detail along with relevant examples of optical biosensing devices using NAA sensing platforms. Furthermore, we summarise the performance of these devices and provide a future perspective on this promising research field. PMID:28788678

Design of a broadband reciprocal optical diode in multimode silicon waveguide by partial depth etching

NASA Astrophysics Data System (ADS)

Zhu, Danfeng; Zhang, Jinqiannan; Ye, Han; Yu, Zhongyuan; Liu, Yumin

2018-07-01

We propose a design of reciprocal optical diode based on asymmetric spatial mode conversion in multimode silicon waveguide on the silicon-on-insulator platform. The design possesses large bandwidth, high contrast ratio and high fabrication tolerance. The forward even-to-odd mode conversion and backward blockade of even mode are achieved by partial depth etching in the functional region. Simulated by three-dimension finite-difference time-domain method, the forward transmission efficiency is about -2.05 dB while the backward transmission efficiency is only -22.68 dB, reaching a highest contrast ratio of 0.983 at the wavelength of 1550 nm. The operational bandwidth is up to 200 nm (from 1450 nm to 1650 nm) with contrast ratio higher than 0.911. The numerical analysis also demonstrates that the proposed optical diode possesses high tolerance for geometry parameter errors which may be introduced in fabrication. The design based on partial depth etching is compatible with CMOS process and is expected to contribute to the silicon-based all-optical circuits.

Portable and Reliable Surface-Enhanced Raman Scattering Silicon Chip for Signal-On Detection of Trace Trinitrotoluene Explosive in Real Systems.

PubMed

Chen, Na; Ding, Pan; Shi, Yu; Jin, Tengyu; Su, Yuanyuan; Wang, Houyu; He, Yao

2017-05-02

There is an increasing interest in the development of surface-enhanced Raman scattering (SERS) sensors for rapid and accurate on-site detection of hidden explosives. However, portable SERS methods for trace explosive detection in real systems remain scarce, mainly due to their relatively poor reliability and portability. Herein, we present the first demonstration of a portable silicon-based SERS analytical platform for signal-on detection of trace trinitrotoluene (TNT) explosives, which is made of silver nanoparticle (AgNP)-decorated silicon wafer chip (0.5 cm × 0.5 cm). In principle, under 514 nm excitation, the Raman signals of p-aminobenzenethiol (PABT) modified on the AgNP surface could be largely lit up due to the formation of electronic resonance-active TNT-PABT complex. In addition, the surface of AgNPs and silicon substrate-induced plasmon resonances also contribute the total SERS enhancement. For quantitative evaluation, the as-prepared chip features ultrahigh sensitivity [limit of detection is down to ∼1 pM (∼45.4 fg/cm 2 )] and adaptable reproducibility (relative standard deviation is less than 15%) in the detection of TNT standard solutions. More importantly, the developed chip can couple well with a hand-held Raman spectroscopic device using 785 nm excitation, suitable for qualitative analysis of trace TNT even at ∼10 -8 M level from environmental samples including lake water, soil, envelope, and liquor with a short data acquisition time (∼1 min). Furthermore, TNT vapors diffusing from TNT residues (∼10 -6 M) can be detected by using such a portable device, indicating its feasibility in determination of hidden samples.

Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

NASA Astrophysics Data System (ADS)

Pratlong, Jérôme; Schmuelling, Frank; Benitez, Victor; Breart De Boisanger, Michel; Skegg, Michael; Simpson, Robert; Bowring, Steve; Krzizok, Natalie

2017-09-01

The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot étalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.

A Synthetic Self-Oscillating Vocal Fold Model Platform for Studying Augmentation Injection

PubMed Central

Murray, Preston R.; Thomson, Scott L.; Smith, Marshall E.

2013-01-01

Objective Design and evaluate a platform for studying the mechanical effects of augmentation injections using synthetic self-oscillating vocal fold models. Study Design Basic science. Methods Life-sized, synthetic, multi-layer, self-oscillating vocal fold models were created that simulated bowing via volumetric reduction of the body layer relative to that of a normal, unbowed model. Material properties of the layers were unchanged. Models with varying degrees of bowing were created and paired with normal models. Following initial acquisition of data (onset pressure, vibration frequency, flow rate, and high-speed image sequences), bowed models were injected with silicone that had material properties similar to those used in augmentation procedures. Three different silicone injection quantities were tested: sufficient to close the glottal gap, insufficient to close the glottal gap, and excess silicone to create convex bowing of the bowed model. The above-mentioned metrics were again taken and compared. Pre- and post-injection high-speed image sequences were acquired using a hemilarynx setup, from which medial surface dynamics were quantified. Results The models vibrated with mucosal wave-like motion and at onset pressures and frequencies typical of human phonation. The models successfully exhibited various degrees of bowing which were then mitigated by injecting filler material. The models showed general pre- to post-injection decreases in onset pressure, flow rate, and open quotient, and a corresponding increase in vibration frequency. Conclusion The model may be useful in further explorations of the mechanical consequences of augmentation injections. PMID:24476985

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

2016-05-01

The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS circuits with 500 nm thick Si, operating around 3.8 µm wavelength. Results on facet coupling and sub-wavelength engineered grating coupler solutions in the mid-IR regime will be compared.

Hybrid Tandem Solar Cells | Photovoltaic Research | NREL

Science.gov Websites

Hybrid Tandem Solar Cells Hybrid Tandem Solar Cells To achieve aggressive cost reductions in photovoltaics (PV) beyond the 6¢/kWh SunShot Initiative 2020 goal, module efficiency must be increased beyond on a silicon platform and that aim to provide viable prototypes for commercialization. PV Research

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit.

PubMed

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

2016-12-21

Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10 -9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.

Si photonics technology for future optical interconnection

NASA Astrophysics Data System (ADS)

Zheng, Xuezhe; Krishnamoorthy, Ashok V.

2011-12-01

Scaling of computing systems require ultra-efficient interconnects with large bandwidth density. Silicon photonics offers a disruptive solution with advantages in reach, energy efficiency and bandwidth density. We review our progress in developing building blocks for ultra-efficient WDM silicon photonic links. Employing microsolder based hybrid integration with low parasitics and high density, we optimize photonic devices on SOI platforms and VLSI circuits on more advanced bulk CMOS technology nodes independently. Progressively, we successfully demonstrated single channel hybrid silicon photonic transceivers at 5 Gbps and 10 Gbps, and 80 Gbps arrayed WDM silicon photonic transceiver using reverse biased depletion ring modulators and Ge waveguide photo detectors. Record-high energy efficiency of less than 100fJ/bit and 385 fJ/bit were achieved for the hybrid integrated transmitter and receiver, respectively. Waveguide grating based optical proximity couplers were developed with low loss and large optical bandwidth to enable multi-layer intra/inter-chip optical interconnects. Thermal engineering of WDM devices by selective substrate removal, together with WDM link using synthetic wavelength comb, we significantly improved the device tuning efficiency and reduced the tuning range. Using these innovative techniques, two orders of magnitude tuning power reduction was achieved. And tuning cost of only a few 10s of fJ/bit is expected for high data rate WDM silicon photonic links.

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

NASA Astrophysics Data System (ADS)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J.; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

2016-12-01

Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10-9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers.

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

PubMed Central

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J.; Galili, Michael; Morioka, Toshio; Oxenløwe, Leif Katsuo

2016-01-01

Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7 × 7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than −30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing switching is demonstrated successfully. Bit error rate performance below 10−9 is obtained for all spatial channels with low power penalty. The proposed design can be easily upgraded to reconfigurable optical add/drop multiplexer capable of switching several multicore fibers. PMID:28000735

Measurement of DNA translocation dynamics in a solid-state nanopore at 100-ns temporal resolution

PubMed Central

Shekar, Siddharth; Niedzwiecki, David J.; Chien, Chen-Chi; Ong, Peijie; Fleischer, Daniel A.; Lin, Jianxun; Rosenstein, Jacob K.; Drndic, Marija; Shepard, Kenneth L.

2017-01-01

Despite the potential for nanopores to be a platform for high-bandwidth study of single-molecule systems, ionic current measurements through nanopores have been limited in their temporal resolution by noise arising from poorly optimized measurement electronics and large parasitic capacitances in the nanopore membranes. Here, we present a complementary metal-oxide-semiconductor (CMOS) nanopore (CNP) amplifier capable of low noise recordings at an unprecedented 10 MHz bandwidth. When integrated with state-of-the-art solid-state nanopores in silicon nitride membranes, we achieve an SNR of greater than 10 for ssDNA translocations at a measurement bandwidth of 5 MHz, which represents the fastest ion current recordings through nanopores reported to date. We observe transient features in ssDNA translocation events that are as short as 200 ns, which are hidden even at bandwidths as high as 1 MHz. These features offer further insights into the translocation kinetics of molecules entering and exiting the pore. This platform highlights the advantages of high-bandwidth translocation measurements made possible by integrating nanopores and custom-designed electronics. PMID:27332998

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides

NASA Astrophysics Data System (ADS)

Lemonde, M.-A.; Meesala, S.; Sipahigil, A.; Schuetz, M. J. A.; Lukin, M. D.; Loncar, M.; Rabl, P.

2018-05-01

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Optimization of silicon waveguides for gas detection application at mid-IR wavelengths

NASA Astrophysics Data System (ADS)

Butt, M. A.; Kozlova, E. S.

2018-04-01

There are several trace gases such as N2O, CO, CO2, NO, H2O, NO2, NH3, CH4 etc. which have their absorption peaks in Mid-IR spectrum These gases strongly absorb in the mid-IR > 2.5 μm spectral region due to their fundamental rotational and vibrational transitions. In this work, we modelled and optimized three different kinds of waveguides such as rib, strip and slot based on silicon platform to obtain maximum evanescent field ratio. These waveguides are designed at 3.39 μm and 4.67 μm which correspond to the absorption line of methane (CH4) and carbon monoxide (CO) respectively.

A review of materials engineering in silicon-based optical fibres

NASA Astrophysics Data System (ADS)

Healy, Noel; Gibson, Ursula; Peacock, Anna C.

2018-02-01

Semiconductor optical fibre technologies have grown rapidly in the last decade and there are now a range of production and post-processing techniques that allow for a vast degree of control over the core material's optoelectronic properties. These methodologies and the unique optical fibre geometry provide an exciting platform for materials engineering and fibres can now be produced with single crystal cores, low optical losses, tunable strain, and inscribable phase composition. This review discusses the state-of-the-art regarding the production of silicon optical fibres in amorphous and crystalline form and then looks at the post-processing techniques and the improved material quality and new functionality that they afford.

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides.

PubMed

Lemonde, M-A; Meesala, S; Sipahigil, A; Schuetz, M J A; Lukin, M D; Loncar, M; Rabl, P

2018-05-25

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Roadmap on silicon photonics

NASA Astrophysics Data System (ADS)

Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

2016-07-01

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

TM grating coupler on low-loss LPCVD based Si3N4 waveguide platform

NASA Astrophysics Data System (ADS)

Dabos, G.; Manolis, A.; Giesecke, A. L.; Porschatis, C.; Chmielak, B.; Wahlbrink, T.; Pleros, N.; Tsiokos, D.

2017-12-01

We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 waveguides have been fabricated by optical projection lithography using an i-line stepper tool enabling low-cost and mass manufacturing of photonic-integrated-circuits.

Ultracompact and high efficient silicon-based polarization splitter-rotator using a partially-etched subwavelength grating coupler

PubMed Central

Xu, Yin; Xiao, Jinbiao

2016-01-01

On-chip polarization manipulation is pivotal for silicon-on-insulator material platform to realize polarization-transparent circuits and polarization-division-multiplexing transmissions, where polarization splitters and rotators are fundamental components. In this work, we propose an ultracompact and high efficient silicon-based polarization splitter-rotator (PSR) using a partially-etched subwavelength grating (SWG) coupler. The proposed PSR consists of a taper-integrated SWG coupler combined with a partially-etched waveguide between the input and output strip waveguides to make the input transverse-electric (TE) mode couple and convert to the output transverse-magnetic (TM) mode at the cross port while the input TM mode confine well in the strip waveguide during propagation and directly output from the bar port with nearly neglected coupling. Moreover, to better separate input polarizations, an additional tapered waveguide extended from the partially-etched waveguide is also added. From results, an ultracompact PSR of only 8.2 μm in length is achieved, which is so far the reported shortest one. The polarization conversion loss and efficiency are 0.12 dB and 98.52%, respectively, together with the crosstalk and reflection loss of −31.41/−22.43 dB and −34.74/−33.13 dB for input TE/TM mode at wavelength of 1.55 μm. These attributes make the present device suitable for constructing on-chip compact photonic integrated circuits with polarization-independence. PMID:27306112

Design of a New Ultracompact Resonant Plasmonic Multi-Analyte Label-Free Biosensing Platform

PubMed Central

De Palo, Maripina; Ciminelli, Caterina

2017-01-01

In this paper, we report on the design of a bio-multisensing platform for the selective label-free detection of protein biomarkers, carried out through a 3D numerical algorithm. The platform includes a number of biosensors, each of them is based on a plasmonic nanocavity, consisting of a periodic metal structure to be deposited on a silicon oxide substrate. Light is strongly confined in a region with extremely small size (=1.57 μm2), to enhance the light-matter interaction. A surface sensitivity Ss = 1.8 nm/nm has been calculated together with a detection limit of 128 pg/mm2. Such performance, together with the extremely small footprint, allow the integration of several devices on a single chip to realize extremely compact lab-on-chip microsystems. In addition, each sensing element of the platform has a good chemical stability that is guaranteed by the selection of gold for its fabrication. PMID:28783075

Thermoplastic microfluidic devices and their applications in protein and DNA analysis

PubMed Central

Liu, Ke; Fan, Z. Hugh

2013-01-01

Microfluidics is a platform technology that has been used for genomics, proteomics, chemical synthesis, environment monitoring, cellular studies, and other applications. The fabrication materials of microfluidic devices have traditionally included silicon and glass, but plastics have gained increasing attention in the past few years. We focus this review on thermoplastic microfluidic devices and their applications in protein and DNA analysis. We outline the device design and fabrication methods, followed by discussion on the strategies of surface treatment. We then concentrate on several significant advancements in applying thermoplastic microfluidic devices to protein separation, immunoassays, and DNA analysis. Comparison among numerous efforts, as well as the discussion on the challenges and innovation associated with detection, is presented. PMID:21274478

Frequency-time coherence for all-optical sampling without optical pulse source

PubMed Central

Preußler, Stefan; Raoof Mehrpoor, Gilda; Schneider, Thomas

2016-01-01

Sampling is the first step to convert an analogue optical signal into a digital electrical signal. The latter can be further processed and analysed by well-known electrical signal processing methods. Optical pulse sources like mode-locked lasers are commonly incorporated for all-optical sampling, but have several drawbacks. A novel approach for a simple all-optical sampling is to utilise the frequency-time coherence of each signal. The method is based on only using two coupled modulators driven with an electrical sine wave. Since no optical source is required, a simple integration in appropriate platforms, such as Silicon Photonics might be possible. The presented method grants all-optical sampling with electrically tunable bandwidth, repetition rate and time shift. PMID:27687495

Vernier-like super resolution with guided correlated photon pairs.

PubMed

Nespoli, Matteo; Goan, Hsi-Sheng; Shih, Min-Hsiung

2016-01-11

We describe a dispersion-enabled, ultra-low power realization of super-resolution in an integrated Mach-Zehnder interferometer. Our scheme is based on a Vernier-like effect in the coincident detection of frequency correlated, non-degenerate photon pairs at the sensor output in the presence of group index dispersion. We design and simulate a realistic integrated refractive index sensor in a silicon nitride on silica platform and characterize its performance in the proposed scheme. We present numerical results showing a sensitivity improvement upward of 40 times over a traditional sensing scheme. The device we design is well within the reach of modern semiconductor fabrication technology. We believe this is the first metrology scheme that uses waveguide group index dispersion as a resource to attain super-resolution.

Microfluidic Platform for the Long-Term On-Chip Cultivation of Mammalian Cells for Lab-On-A-Chip Applications.

PubMed

Bunge, Frank; Driesche, Sander van den; Vellekoop, Michael J

2017-07-10

Lab-on-a-Chip (LoC) applications for the long-term analysis of mammalian cells are still very rare due to the lack of convenient cell cultivation devices. The difficulties are the integration of suitable supply structures, the need of expensive equipment like an incubator and sophisticated pumps as well as the choice of material. The presented device is made out of hard, but non-cytotoxic materials (silicon and glass) and contains two vertical arranged membranes out of hydrogel. The porous membranes are used to separate the culture chamber from two supply channels for gases and nutrients. The cells are fed continuously by diffusion through the membranes without the need of an incubator and low requirements on the supply of medium to the assembly. The diffusion of oxygen is modelled in order to find the optimal dimensions of the chamber. The chip is connected via 3D-printed holders to the macroscopic world. The holders are coated with Parlyene C to ensure that only biocompatible materials are in contact with the culture medium. The experiments with MDCK-cells show the successful seeding inside the chip, culturing and passaging. Consequently, the presented platform is a step towards Lab-on-a-Chip applications that require long-term cultivation of mammalian cells.

Athermal Photonic Devices and Circuits on a Silicon Platform

NASA Astrophysics Data System (ADS)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for post-fabrication trimming of athermal rings by sandwiching a thin photosensitive layer of As2S3 in between amorphous Si core and polymer top cladding. System design of an add-drop filter requires an optimum combination of channel counts performance and power handling capacity for maximum aggregate bandwidth. We establish the superior performance of athermal add-drop filter compared to a standard filter treating bandwidth as the figure-of-merit. (Copies available exclusively from MIT Libraries, libraries.mit.edu/docs - docs mit.edu)

1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

PubMed

Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

2015-04-01

Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

Micropatterning hydroxy-PAAm hydrogels and Sylgard 184 silicone elastomers with tunable elastic moduli.

PubMed

Versaevel, Marie; Grevesse, Thomas; Riaz, Maryam; Lantoine, Joséphine; Gabriele, Sylvain

2014-01-01

This protocol describes a simple method to deposit protein micropatterns over a wide range of culture substrate stiffness (three orders of magnitude) by using two complementary polymeric substrates. In the first part, we introduce a novel polyacrylamide hydrogel, called hydroxy-polyacrylamide (PAAm), that permits to surmount the intrinsically nonadhesive properties of polyacrylamide with minimal requirements in cost or expertize. We present a protocol for tuning easily the rigidity of "soft" hydroxy-PAAm hydrogels between ~0.5 and 50 kPa and a micropatterning method to locally deposit protein micropatterns on these hydrogels. In a second part, we describe a protocol for tuning the rigidity of "stiff" silicone elastomers between ~100 and 1000 kPa and printing efficiently proteins from the extracellular matrix. Finally, we investigate the effect of the matrix rigidity on the nucleus of primary endothelial cells by tuning the rigidity of both polymeric substrates. We envision that the complementarity of these two polymeric substrates, combined with an efficient microprinting technique, can be further developed in the future as a powerful mechanobiology platform to investigate in vitro the effect of mechanotransduction cues on cellular functions, gene expression, and stem cell differentiation. Copyright © 2014 Elsevier Inc. All rights reserved.

Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

PubMed

Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

2017-03-01

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

Label-free optical biosensors based on aptamer-functionalized porous silicon scaffolds.

PubMed

Urmann, Katharina; Walter, Johanna-Gabriela; Scheper, Thomas; Segal, Ester

2015-02-03

A proof-of-concept for a label-free and reagentless optical biosensing platform based on nanostructured porous silicon (PSi) and aptamers is presented in this work. Aptamers are oligonucleotides (single-stranded DNA or RNA) that can bind their targets with high affinity and specificity, making them excellent recognition elements for biosensor design. Here we describe the fabrication and characterization of aptamer-conjugated PSi biosensors, where a previously characterized his-tag binding aptamer (6H7) is used as model system. Exposure of the aptamer-functionalized PSi to the target proteins as well as to complex fluids (i.e., bacteria lysates containing target proteins) results in robust and well-defined changes in the PSi optical interference spectrum, ascribed to specific aptamer-protein binding events occurring within the nanoscale pores, monitored in real time. The biosensors show exceptional stability and can be easily regenerated by a short rinsing step for multiple biosensing analyses. This proof-of-concept study demonstrates the possibility of designing highly stable and specific label-free optical PSi biosensors, employing aptamers as capture probes, holding immense potential for application in detection of a broad range of targets, in a simple yet reliable manner.

Photonic molecules for application in silicon-on-insulator optical sensors

NASA Astrophysics Data System (ADS)

Barea, Luis A. M.; Souza, Mario C. M. M.; Moras, Andre L.; Catellan, Alvaro R. G.; Cirino, Giuseppe A.; Von Zuben, Antonio A. G.; Bassani, Jose W. M.; Frateschi, Newton C.

2018-02-01

Optical sensors based on integrated photonics have experienced impressive advancements in the past few decades and represent one of the main sensing solutions in many areas including environmental sensing and medical diagnostics. In this context, optical microcavities are extensively employed as refractive index (RI) sensors, providing sharp optical resonances that allow the detection of very small variations in the surrounding RI. With increased sensitivity, however, the device is subjected to environmental perturbations that can also change the RI, such as temperature variations, and therefore compromise their reliability. In this work, we present the concept and experimental realization of a photonic sensor based on coupled microcavities or Photonic Molecules (PM) in which only one cavity is exposed to the sensing solution, allowing a differential measurement of the RI change. The device consists of an exposed 5-μm radius microdisk resonator coupled to an external clad microring resonator fabricated on silicon-on-insulator (SOI) platform. This design allows good sensitivity (26 nm/RIU) for transverse electrical mode (TE-mode) in a compact footprint (40 × 40 μm2), representing a good solution for real-life applications in which measurement conditions are not easily controllable.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Performance of MCNP4A on seven computing platforms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, J.S.; Brockhoff, R.C.

1994-12-31

The performance of seven computer platforms has been evaluated with the MCNP4A Monte Carlo radiation transport code. For the first time we report timing results using MCNP4A and its new test set and libraries. Comparisons are made on platforms not available to us in previous MCNP timing studies. By using MCNP4A and its 325-problem test set, a widely-used and readily-available physics production code is used; the timing comparison is not limited to a single ``typical`` problem, demonstrating the problem dependence of timing results; the results are reproducible at the more than 100 installations around the world using MCNP; comparison ofmore » performance of other computer platforms to the ones tested in this study is possible because we present raw data rather than normalized results; and a measure of the increase in performance of computer hardware and software over the past two years is possible. The computer platforms reported are the Cray-YMP 8/64, IBM RS/6000-560, Sun Sparc10, Sun Sparc2, HP/9000-735, 4 processor 100 MHz Silicon Graphics ONYX, and Gateway 2000 model 4DX2-66V PC. In 1991 a timing study of MCNP4, the predecessor to MCNP4A, was conducted using ENDF/B-V cross-section libraries, which are export protected. The new study is based upon the new MCNP 25-problem test set which utilizes internationally available data. MCNP4A, its test problems and the test data library are available from the Radiation Shielding and Information Center in Oak Ridge, Tennessee, or from the NEA Data Bank in Saclay, France. Anyone with the same workstation and compiler can get the same test problem sets, the same library files, and the same MCNP4A code from RSIC or NEA and replicate our results. And, because we report raw data, comparison of the performance of other compute platforms and compilers can be made.« less

Robustness of spiking Deep Belief Networks to noise and reduced bit precision of neuro-inspired hardware platforms.

PubMed

Stromatias, Evangelos; Neil, Daniel; Pfeiffer, Michael; Galluppi, Francesco; Furber, Steve B; Liu, Shih-Chii

2015-01-01

Increasingly large deep learning architectures, such as Deep Belief Networks (DBNs) are the focus of current machine learning research and achieve state-of-the-art results in different domains. However, both training and execution of large-scale Deep Networks require vast computing resources, leading to high power requirements and communication overheads. The on-going work on design and construction of spike-based hardware platforms offers an alternative for running deep neural networks with significantly lower power consumption, but has to overcome hardware limitations in terms of noise and limited weight precision, as well as noise inherent in the sensor signal. This article investigates how such hardware constraints impact the performance of spiking neural network implementations of DBNs. In particular, the influence of limited bit precision during execution and training, and the impact of silicon mismatch in the synaptic weight parameters of custom hybrid VLSI implementations is studied. Furthermore, the network performance of spiking DBNs is characterized with regard to noise in the spiking input signal. Our results demonstrate that spiking DBNs can tolerate very low levels of hardware bit precision down to almost two bits, and show that their performance can be improved by at least 30% through an adapted training mechanism that takes the bit precision of the target platform into account. Spiking DBNs thus present an important use-case for large-scale hybrid analog-digital or digital neuromorphic platforms such as SpiNNaker, which can execute large but precision-constrained deep networks in real time.

Robustness of spiking Deep Belief Networks to noise and reduced bit precision of neuro-inspired hardware platforms

PubMed Central

Stromatias, Evangelos; Neil, Daniel; Pfeiffer, Michael; Galluppi, Francesco; Furber, Steve B.; Liu, Shih-Chii

2015-01-01

Increasingly large deep learning architectures, such as Deep Belief Networks (DBNs) are the focus of current machine learning research and achieve state-of-the-art results in different domains. However, both training and execution of large-scale Deep Networks require vast computing resources, leading to high power requirements and communication overheads. The on-going work on design and construction of spike-based hardware platforms offers an alternative for running deep neural networks with significantly lower power consumption, but has to overcome hardware limitations in terms of noise and limited weight precision, as well as noise inherent in the sensor signal. This article investigates how such hardware constraints impact the performance of spiking neural network implementations of DBNs. In particular, the influence of limited bit precision during execution and training, and the impact of silicon mismatch in the synaptic weight parameters of custom hybrid VLSI implementations is studied. Furthermore, the network performance of spiking DBNs is characterized with regard to noise in the spiking input signal. Our results demonstrate that spiking DBNs can tolerate very low levels of hardware bit precision down to almost two bits, and show that their performance can be improved by at least 30% through an adapted training mechanism that takes the bit precision of the target platform into account. Spiking DBNs thus present an important use-case for large-scale hybrid analog-digital or digital neuromorphic platforms such as SpiNNaker, which can execute large but precision-constrained deep networks in real time. PMID:26217169

Photonic crystal ring resonator-based four-channel dense wavelength division multiplexing demultiplexer on silicon on insulator platform: design and analysis

NASA Astrophysics Data System (ADS)

Sreenivasulu, Tupakula; Bhowmick, Kaustav; Samad, Shafeek A.; Yadunath, Thamerassery Illam R.; Badrinarayana, Tarimala; Hegde, Gopalkrishna; Srinivas, Talabattula

2018-04-01

A micro/nanofabrication feasible compact photonic crystal (PC) ring-resonator-based channel drop filter has been designed and analyzed for operation in C and L bands of communication window. The four-channel demultiplexer consists of ring resonators of holes in two-dimensional PC slab. The proposed assembly design of dense wavelength division multiplexing setup is shown to achieve optimal quality factor, without altering the lattice parameters or resonator size or inclusion of scattering holes. Transmission characteristics are analyzed using the three-dimensional finite-difference time-domain simulation approach. The radiation loss of the ring resonator was minimized by forced cancelation of radiation fields by fine-tuning the air holes inside the ring resonator. An average cross talk of -34 dB has been achieved between the adjacent channels maintaining an average quality factor of 5000. Demultiplexing is achieved by engineering only the air holes inside the ring, which makes it a simple and tolerant design from the fabrication perspective. Also, the device footprint of 500 μm2 on silicon on insulator platform makes it easy to fabricate the device using e-beam lithography technique.

2-Shock layered tuning campaign

NASA Astrophysics Data System (ADS)

Masse, Laurent; Dittrich, T.; Khan, S.; Kyrala, G.; Ma, T.; MacLaren, S.; Ralph, J.; Salmonson, J.; Tipton, R.; Los Alamos Natl Lab Team; Lawrence Livermore Natl Lab Team

2016-10-01

The 2-Shock platform has been developed to maintain shell sphericity throughout the compression phase of an indirect-drive target implosion and produce a stagnating hot spot in a quasi 1D-like manner. A sub-scale, 1700 _m outer diameter, and thick, 200 _m, uniformly Silicon doped, gas-filled plastic capsule is driven inside a nominal size 5750 _m diameter ignition hohlraum. The hohlraum fill is near vacuum to reduce back-scatter and improve laser/drive coupling. A two-shock pulse of about 1 MJ of laser energy drives the capsule. The thick capsule prevents ablation front feed-through to the imploded core. This platform has demonstrated its efficiency to tune a predictable and reproducible 1-D implosion with a nearly round shape. It has been shown that the high foot performance was dominated by the local defect growth due to the ablation front instability and by the hohlraum radiation asymmetries. The idea here is to take advantage of this 2-Shock platform to design a 1D-like layered implosion and eliminates the deleterious effects of radiation asymmetries and ablation front instability growth. We present the design work and our first experimental results of this near one-dimensional 2-Shock layered design. This work was performed under the auspices of the Lawrence Livermore National Security, LLC, (LLNS) under Contract No. DE-AC52-07NA27344.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that formmore » when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Bombarding Cancer: Biolistic Delivery of therapeutics using Porous Si Carriers

PubMed Central

Zilony, Neta; Tzur-Balter, Adi; Segal, Ester; Shefi, Orit

2013-01-01

A new paradigm for an effective delivery of therapeutics into cancer cells is presented. Degradable porous silicon carriers, which are tailored to carry and release a model anti-cancer drug, are biolistically bombarded into in-vitro cancerous targets. We demonstrate the ability to launch these highly porous microparticles by a pneumatic capillary gene gun, which is conventionally used to deliver cargos by heavy metal carriers. By optimizing the gun parameters e.g., the accelerating gas pressure, we have successfully delivered the porous carriers, to reach deep targets and to cross a skin barrier in a highly spatial resolution. Our study reveals significant cytotoxicity towards the target human breast carcinoma cells following the delivery of drug-loaded carriers, while administrating empty particles results in no effect on cell viability. The unique combination of biolistics with the temporal control of payload release from porous carriers presents a powerful and non-conventional platform for designing new therapeutic strategies. PMID:23975675

Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

Optical interconnection networks for high-performance computing systems

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr; Bergman, Keren

2012-04-01

Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers.

Interband π -like plasmon in silicene grown on silver

NASA Astrophysics Data System (ADS)

Sindona, A.; Cupolillo, A.; Alessandro, F.; Pisarra, M.; Coello Fiallos, D. C.; Osman, S. M.; Caputi, L. S.

2018-01-01

Silicene, the two-dimensional allotrope of silicon, is predicted to exist in a low-buckled honeycomb lattice, characterized by semimetallic electronic bands with graphenelike energy-momentum dispersions around the Fermi level (represented by touching Dirac cones). Single layers of silicene are mostly synthesized by depositing silicon on top of silver, where, however, the different phases observed to date are so strongly hybridized with the substrate that not only the Dirac cones, but also the whole valence and conduction states of ideal silicene appear to be lost. Here, we provide evidence that at least part of this semimetallic behavior is preserved by the coexistence of more silicene phases, epitaxially grown on Ag(111). In particular, we combine electron energy loss spectroscopy and time-dependent density functional theory to characterize the low-energy plasmon of a multiphase-silicene/Ag(111) sample, prepared at controlled silicon coverage and growth temperature. We find that this mode survives the interaction with the substrate, being perfectly matched with the π -like plasmon of ideal silicene. We therefore suggest that the weakened interaction of multiphase silicene with the substrate may provide a unique platform with the potential to develop different applications based on two-dimensional silicon systems.

EDITORIAL: Special issue on silicon photonics

NASA Astrophysics Data System (ADS)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative mechanisms for modulation in silicon that have yielded increasingly impressive results (see, for example, Liao L et al 2007 Electron. Lett. 43 issue 22). The convergence of computing and communications and the resultant demand for increased bandwidth has been one of the factors influencing the upsurge of interest in silicon, together with the requirement for photonic and electronic integration, all to be realized at low cost. Thus emerging applications such as short-reach communications links for optical interconnect and fibre to the home (FTTH) (as well as a multitude of other applications) are frequently offered as examples of where silicon photonics will have a significant, perhaps a revolutionary, impact. One of the major conclusions of the joint MIT-industry Communication Technology Roadmap (http://mph-roadmap.mit.edu/index.php), was that 'Photonics technology will be driven by electronic-photonic synergy and short (<1 km) reach interconnection. This direction will ignite a major shift in leadership of the optical component industry from information transmission (telecom) to information processing (computing imaging).' Thus the case is made for low-cost implementation, making silicon a prime candidate, particularly if true electronic/photonic integration is to be realized. Despite the limitations of silicon as an optical material, the intrinsic advantages of the most popular silicon optical platform, silicon-on-insulator (SOI), should not be overlooked. The very high confinement nature of this technology platform brings a host of advantages, including the possibility to miniaturize devices and circuits, to reduce power consumption, optical loss and cost, to increase yield, and to be compatible with CMOS-based intelligence. Thus the limitations of silicon as an optical material can be offset against the very significant advantages, to both commercial as well as technological success. Of course, there is still much to do, hence the increasing global investment in silicon technology and the massive increase in research activity in silicon photonics since the early work in the 1980s. Only time will tell if silicon can realize its potential to satisfy the ever-increasing array of applications. However, the indications are positive, and the contributors to this cause employ increasingly impressive levels of intellectual and technological capability to realize the desired goals. It is an interesting time to be involved in slicon photonics, and it will be equally fascinating to watch the evolution of the technology in the future. Whatever happens, silicon will make the transition from being regarded as purely an electronic material to recognition as an optoelectronic material. The evidence for this is represented in the collection of papers that form this special issue of Semiconductor Science and Technology. This special issue is, in turn, representative of the rapidly increasing body of literature that represents the field of silicon photonics. In a field of such rapid transition as silicon photonics, the hope is that this special issue takes a snapshot of the technology at the time of publication, to document the progress of the field for future reference, and in turn to stimulate further work. The Guest Editors are grateful for the tireless support of Clare Bedrock at IOP Publishing.

Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

PubMed Central

Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2011-01-01

We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

Organophosphonate-based PNA-functionalization of silicon nanowires for label-free DNA detection.

PubMed

Cattani-Scholz, Anna; Pedone, Daniel; Dubey, Manish; Neppl, Stefan; Nickel, Bert; Feulner, Peter; Schwartz, Jeffrey; Abstreiter, Gerhard; Tornow, Marc

2008-08-01

We investigated hydroxyalkylphosphonate monolayers as a novel platform for the biofunctionalization of silicon-based field effect sensor devices. This included a detailed study of the thin film properties of organophosphonate films on Si substrates using several surface analysis techniques, including AFM, ellipsometry, contact angle, X-ray photoelectron spectroscopy (XPS), X-ray reflectivity, and current-voltage characteristics in electrolyte solution. Our results indicate the formation of a dense monolayer on the native silicon oxide that has excellent passivation properties. The monolayer was biofunctionalized with 12 mer peptide nucleic acid (PNA) receptor molecules in a two-step procedure using the heterobifunctional linker, 3-maleimidopropionic-acid-N-hydroxysuccinimidester. Successful surface modification with the probe PNA was verified by XPS and contact angle measurements, and hybridization with DNA was determined by fluorescence measurements. Finally, the PNA functionalization protocol was translated to 2 microm long, 100 nm wide Si nanowire field effect devices, which were successfully used for label-free DNA/PNA hybridization detection.

Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes

NASA Astrophysics Data System (ADS)

Boettcher, Shannon W.; Spurgeon, Joshua M.; Putnam, Morgan C.; Warren, Emily L.; Turner-Evans, Daniel B.; Kelzenberg, Michael D.; Maiolo, James R.; Atwater, Harry A.; Lewis, Nathan S.

2010-01-01

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen2+/+ electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.

Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes.

PubMed

Boettcher, Shannon W; Spurgeon, Joshua M; Putnam, Morgan C; Warren, Emily L; Turner-Evans, Daniel B; Kelzenberg, Michael D; Maiolo, James R; Atwater, Harry A; Lewis, Nathan S

2010-01-08

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen(2+/+) electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Mechanism of erosion of nanostructured porous silicon drug carriers in neoplastic tissues

PubMed Central

Tzur-Balter, Adi; Shatsberg, Zohar; Beckerman, Margarita; Segal, Ester; Artzi, Natalie

2015-01-01

Nanostructured porous silicon (PSi) is emerging as a promising platform for drug delivery owing to its biocompatibility, degradability and high surface area available for drug loading. The ability to control PSi structure, size and porosity enables programming its in vivo retention, providing tight control over embedded drug release kinetics. In this work, the relationship between the in vitro and in vivo degradation of PSi under (pre)clinically relevant conditions, using breast cancer mouse model, is defined. We show that PSi undergoes enhanced degradation in diseased environment compared with healthy state, owing to the upregulation of reactive oxygen species (ROS) in the tumour vicinity that oxidize the silicon scaffold and catalyse its degradation. We further show that PSi degradation in vitro and in vivo correlates in healthy and diseased states when ROS-free or ROS-containing media are used, respectively. Our work demonstrates that understanding the governing mechanisms associated with specific tissue microenvironment permits predictive material performance. PMID:25670235

Nanostructured porous silicon-mediated drug delivery.

PubMed

Martín-Palma, Raúl J; Hernández-Montelongo, Jacobo; Torres-Costa, Vicente; Manso-Silván, Miguel; Muñoz-Noval, Álvaro

2014-08-01

The particular properties of nanostructured porous silicon (nanoPS) make it an attractive material for controlled and localized release of therapeutics within the body, aiming at increased efficacy and reduced risks of potential side effects. Since this is a rapidly evolving field as a consequence of the number of research groups involved, a critical review of the state of the art is necessary. In this work, the most promising and successful applications of nanoPS in the field of drug delivery are reviewed and discussed. Two key issues such as drug loading and release are also analyzed in detail. The development of multifunctional (hybrid) systems, aiming at imparting additional functionalities to the nanoPS particles such as luminescence, magnetic response and/or plasmonic effects (allowing simultaneous tracking and guiding), is also examined. Nanostructured materials based on silicon are promising platforms for pharmaceutical applications given their ability to degrade and low toxicity. However, a very limited number of clinical applications have been demonstrated so far.

Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

PubMed

Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

2012-10-01

We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

Membrane on a Chip: A Functional Tethered Lipid Bilayer Membrane on Silicon Oxide Surfaces

PubMed Central

Atanasov, Vladimir; Knorr, Nikolaus; Duran, Randolph S.; Ingebrandt, Sven; Offenhäusser, Andreas; Knoll, Wolfgang; Köper, Ingo

2005-01-01

Tethered membranes have been proven during recent years to be a powerful and flexible biomimetic platform. We reported in a previous article on the design of a new architecture based on the self-assembly of a thiolipid on ultrasmooth gold substrates, which shows extremely good electrical sealing properties as well as functionality of a bilayer membrane. Here, we describe the synthesis of lipids for a more modular design and the adaptation of the linker part to silane chemistry. We were able to form a functional tethered bilayer lipid membrane with good electrical sealing properties covering a silicon oxide surface. We demonstrate the functional incorporation of the ion carrier valinomycin and of the ion channel gramicidin. PMID:16127170

Metropolitan Quantum Key Distribution with Silicon Photonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalablemore » resource for future formation of metropolitan quantum-secure communications networks.« less

Metropolitan Quantum Key Distribution with Silicon Photonics

DOE PAGES

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; ...

2018-04-06

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalablemore » resource for future formation of metropolitan quantum-secure communications networks.« less

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Y.; Roland, I.; Checoury, X.

We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamentalmore » cavity mode.« less

Influence of porosity on thermophysical properties of a composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishaeva, N. Yu., E-mail: anohina@mail2000.ru; Ljukshin, B. A., E-mail: lba2008@yandex.ru; Bochkareva, S. A., E-mail: svetlanab7@yandex.ru

2015-10-27

In many modern information systems, the heat generated during the operation of electronic devices is usually dissipated by heat-conductive pads between the casing of the respective equipment and a massive base (platform). For newly developed pads, the promising materials are composites on the basis of various types of silicone rubber. At the same time, during the production of the pads without a vacuum setup, the material can contain air bubbles, which causes the porosity potentially negative for the thermal properties of the material. This work studies the thermal conductivity depending on the degree of silicone matrix filling by copper particles,more » introduced to improve thermal conductivity, and by air bubbles that are considered as reinforcing inclusions.« less

Metropolitan Quantum Key Distribution with Silicon Photonics

NASA Astrophysics Data System (ADS)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; Cai, Hong; Long, Christopher M.; Boynton, Nicholas; Martinez, Nicholas; DeRose, Christopher; Chen, Changchen; Grein, Matthew; Trotter, Douglas; Starbuck, Andrew; Pomerene, Andrew; Hamilton, Scott; Wong, Franco N. C.; Camacho, Ryan; Davids, Paul; Urayama, Junji; Englund, Dirk

2018-04-01

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugimoto, Hiroshi; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501; Zhang, Ran

2015-07-27

We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensingmore » and imaging.« less

Direct current microhollow cathode discharges on silicon devices operating in argon and helium

NASA Astrophysics Data System (ADS)

Michaud, R.; Felix, V.; Stolz, A.; Aubry, O.; Lefaucheux, P.; Dzikowski, S.; Schulz-von der Gathen, V.; Overzet, L. J.; Dussart, R.

2018-02-01

Microhollow cathode discharges have been produced on silicon platforms using processes usually used for MEMS fabrication. Microreactors consist of 100 or 150 μm-diameter cavities made from Ni and SiO2 film layers deposited on a silicon substrate. They were studied in the direct current operating mode in two different geometries: planar and cavity configuration. Currents in the order of 1 mA could be injected in microdischarges operating in different gases such as argon and helium at a working pressure between 130 and 1000 mbar. When silicon was used as a cathode, the microdischarge operation was very unstable in both geometry configurations. Strong current spikes were produced and the microreactor lifetime was quite short. We evidenced the fast formation of blisters at the silicon surface which are responsible for the production of these high current pulses. EDX analysis showed that these blisters are filled with argon and indicate that an implantation mechanism is at the origin of this surface modification. Reversing the polarity of the microdischarge makes the discharge operate stably without current spikes, but the discharge appearance is quite different from the one obtained in direct polarity with the silicon cathode. By coating the silicon cathode with a 500 nm-thick nickel layer, the microdischarge becomes very stable with a much longer lifetime. No current spikes are observed and the cathode surface remains quite smooth compared to the one obtained without coating. Finally, arrays of 76 and 576 microdischarges were successfully ignited and studied in argon. At a working pressure of 130 mbar, all microdischarges are simultaneously ignited whereas they ignite one by one at higher pressure.

Status of development of LCOS projection displays for F-22A, F/A-18E/F, and JSF cockpits

NASA Astrophysics Data System (ADS)

Kalmanash, Michael H.

2001-09-01

Projection display technology has been found to be an attractive alternative to direct view flat panel displays in many avionics applications. The projection approach permits compact high performance systems to be tailored to specific platform needs while using a complement of commercial off the shelf (COTS) components, including liquid crystal on silicon (LCOS) microdisplay imagers. A common projection engine used on multiple platforms enables improved performance, lower cost and shorter development cycles. This paper provides a status update for projection displays under development for the F-22A, the F/A-18E/F and the Lockheed Joint Strike Fighter (JSF) aircraft.

Micron-Scale Differential Scanning Calorimeter on a Chip

DOEpatents

Cavicchi, Richard E; Poirier, Gregory Ernest; Suehle, John S; Gaitan, Michael; Tea, Nim H

1998-06-30

A differential scanning microcalorimeter produced on a silicon chip enables microscopic scanning calorimetry measurements of small samples and thin films. The chip may be fabricated using standard CMOS processes. The microcalorimeter includes a reference zone and a sample zone. The reference and sample zones may be at opposite ends of a suspended platform or may reside on separate platforms. An integrated polysilicon heater provides heat to each zone. A thermopile consisting of a succession of thermocouple junctions generates a voltage representing the temperature difference between the reference and sample zones. Temperature differences between the zones provide information about the chemical reactions and phase transitions that occur in a sample placed in the sample zone.

Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

PubMed

Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

2016-11-01

We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

Ion Channel Conductance Measurements on a Silicon-Based Platform

DTIC Science & Technology

2006-01-01

calculated using the molecular dynamics code, GROMACS . Reasonable agreement is obtained in the simulated versus measured conductance over the range of...measurements of the lipid giga-seal characteristics have been performed, including AC conductance measurements and statistical analysis in order to...Dynamics kernel self-consistently coupled to Poisson equations using a P3M force field scheme and the GROMACS description of protein structure and

The silicon chip: A versatile micro-scale platform for micro- and nano-scale systems

NASA Astrophysics Data System (ADS)

Choi, Edward

Cutting-edge advances in micro- and nano-scale technology require instrumentation to interface with the external world. While technology feature sizes are continually being reduced, the size of experimentalists and their instrumentation do not mirror this trend. Hence there is a need for effective application-specific instrumentation to bridge the gap from the micro and nano-scale phenomena being studied to the comparative macro-scale of the human interfaces. This dissertation puts forward the idea that the silicon CMOS integrated circuit, or microchip in short, serves as an excellent platform to perform this functionality. The electronic interfaces designed for the semiconductor industry are particularly attractive as development platforms, and the reduction in feature sizes that has been a hallmark of the industry suggests that chip-scale instrumentation may be more closely coupled to the phenomena of interest, allowing finer control or improved measurement capabilities. Compatibility with commercial processes will further enable economies of scale through mass production, another welcome feature of this approach. Thus chip-scale instrumentation may replace the bulky, expensive, cumbersome-to-operate macro-scale prototypes currently in use for many of these applications. The dissertation examines four specific applications in which the chip may serve as the ideal instrumentation platform. These are nanorod manipulation, polypyrrole bilayer hinge microactuator control, organic transistor hybrid circuits, and contact fluorescence imaging. The thesis is structured around chapters devoted to each of these projects, in addition to a chapter on preliminary work on an RFID system that serves as a wireless interface model. Each of these chapters contains tools and techniques developed for chip-scale instrumentation, from custom scripts for automated layout and data collection to microfabrication processes. Implementation of these tools to develop systems for the applications above is evaluated. The viability of this approach is not limited to the examples listed in this work, and innovative new methodologies beyond those included here may be developed in the future for other systems which would benefit from the versatility of chip-scale platforms.

Data acquisition system for the socal plane detector of the mass separator MASHA

NASA Astrophysics Data System (ADS)

Novoselov, A. S.; Rodin, A. M.; Motycak, S.; Podshibyakin, A. V.; Krupa, L.; Belozerov, A. V.; Vedeneyev, V. Yu.; Gulyaev, A. V.; Gulyaeva, A. V.; Kliman, J.; Salamatin, V. S.; Stepantsov, S. V.; Chernysheva, E. V.; Yukhimchuk, S. A.; Komarov, A. B.; Kamas, D.

2016-09-01

The results of the development and the general information about the data acquisition system which was recently created at the MASHA setup (Flerov laboratory of nuclear reactions at Joint institute for nuclear research) are presented. The main difference from the previous system is that we use a new modern platform, National Instruments PXI with XIA multichannel high-speed digitizers (250 MHz 12 bit 16 channels). At this moment system has 448 spectrometric channels. The software and its features for the data acquisition and analysis are also described. The new DAQ system expands precision measuring capabilities of alpha decays and spontaneous fission at the focal plane position-sensitive silicon strip detector which, in turn, increases the capabilities of the setup in such a field as low-yield registration of elements.

Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics

PubMed Central

Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M.; De Vittorio, Massimo; Rizzi, Francesco

2017-01-01

The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, SixNy/Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described. PMID:28489040

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

PubMed

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10^-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

PubMed

Saber, Md Ghulam; Wang, Yun; El-Fiky, Eslam; Patel, David; Shahriar, Kh Arif; Alam, Md Samiul; Jacques, Maxime; Xing, Zhenping; Xu, Luhua; Abadía, Nicolás; Plant, David V

2018-01-01

We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 μm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 μm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

NASA Astrophysics Data System (ADS)

Chen, Yong; Luo, Guanghong; Diao, Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

2007-04-01

Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3×ω Nd:YAG laser in air, SF6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ~2 µm in SF6 gas and to ~5 µm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (~10×) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits.

Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

NASA Astrophysics Data System (ADS)

Ghosh, Arindam

Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry breaking remains unknown, we believe this indicates a new many-body electronic phase in two-dimensionally doped silicon and germanium with a half-filled impurity band. We acknowledge financial support from Department of Science and Technology, Government of India, and Australia-India Strategic Research Fund (AISRF).

Methods of Attaching or Grafting Carbon Nanotubes to Silicon Surfaces and Composite Structures Derived Therefrom

NASA Technical Reports Server (NTRS)

Tour, James M. (Inventor); Chen, Bo (Inventor); Flatt, Austen K. (Inventor); Stewart, Michael P. (Inventor); Dyke, Christopher A. (Inventor); Maya, Francisco (Inventor)

2012-01-01

The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon surfaces. In some embodiments, such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. In some embodiments, the methods of the present invention include: (1) reacting a silicon surface with a functionalizing agent (such as oligo(phenylene ethynylene)) to form a functionalized silicon surface; (2) dispersing a quantity of CNTs in a solvent to form dispersed CNTs; and (3) reacting the functionalized silicon surface with the dispersed CNTs. The present invention is also directed to the novel compositions produced by such methods.

Experimental verification of layout physical verification of silicon photonics

NASA Astrophysics Data System (ADS)

El Shamy, Raghi S.; Swillam, Mohamed A.

2018-02-01

Silicon photonics have been approved as one of the best platforms for dense integration of photonic integrated circuits (PICs) due to the high refractive index contrast among its materials. Silicon on insulator (SOI) is a widespread photonics technology, which support a variety of devices for lots of applications. As the photonics market is growing, the number of components in the PICs increases which increase the need for an automated physical verification (PV) process. This PV process will assure reliable fabrication of the PICs as it will check both the manufacturability and the reliability of the circuit. However, PV process is challenging in the case of PICs as it requires running an exhaustive electromagnetic (EM) simulations. Our group have recently proposed an empirical closed form models for the directional coupler and the waveguide bends based on the SOI technology. The models have shown a very good agreement with both finite element method (FEM) and finite difference time domain (FDTD) solvers. These models save the huge time of the 3D EM simulations and can be easily included in any electronic design automation (EDA) flow as the equations parameters can be easily extracted from the layout. In this paper we present experimental verification for our previously proposed models. SOI directional couplers with different dimensions have been fabricated using electron beam lithography and measured. The results from the measurements of the fabricate devices have been compared to the derived models and show a very good agreement. Also the matching can reach 100% by calibrating certain parameter in the model.

Process development for single-crystal silicon solar cells

NASA Astrophysics Data System (ADS)

Bohra, Mihir H.

Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

SiGe BiCMOS manufacturing platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

Linear phase conjugation for atmospheric aberration compensation

NASA Astrophysics Data System (ADS)

Grasso, Robert J.; Stappaerts, Eddy A.

1998-01-01

Atmospheric induced aberrations can seriously degrade laser performance, greatly affecting the beam that finally reaches the target. Lasers propagated over any distance in the atmosphere suffer from a significant decrease in fluence at the target due to these aberrations. This is especially so for propagation over long distances. It is due primarily to fluctuations in the atmosphere over the propagation path, and from platform motion relative to the intended aimpoint. Also, delivery of high fluence to the target typically requires low beam divergence, thus, atmospheric turbulence, platform motion, or both results in a lack of fine aimpoint control to keep the beam directed at the target. To improve both the beam quality and amount of laser energy delivered to the target, Northrop Grumman has developed the Active Tracking System (ATS); a novel linear phase conjugation aberration compensation technique. Utilizing a silicon spatial light modulator (SLM) as a dynamic wavefront reversing element, ATS undoes aberrations induced by the atmosphere, platform motion or both. ATS continually tracks the target as well as compensates for atmospheric and platform motion induced aberrations. This results in a high fidelity, near-diffraction limited beam delivered to the target.

Integrated nanoscale tools for interrogating living cells

NASA Astrophysics Data System (ADS)

Jorgolli, Marsela

The development of next-generation, nanoscale technologies that interface biological systems will pave the way towards new understanding of such complex systems. Nanowires -- one-dimensional nanoscale structures -- have shown unique potential as an ideal physical interface to biological systems. Herein, we focus on the development of nanowire-based devices that can enable a wide variety of biological studies. First, we built upon standard nanofabrication techniques to optimize nanowire devices, resulting in perfectly ordered arrays of both opaque (Silicon) and transparent (Silicon dioxide) nanowires with user defined structural profile, densities, and overall patterns, as well as high sample consistency and large scale production. The high-precision and well-controlled fabrication method in conjunction with additional technologies laid the foundation for the generation of highly specialized platforms for imaging, electrochemical interrogation, and molecular biology. Next, we utilized nanowires as the fundamental structure in the development of integrated nanoelectronic platforms to directly interrogate the electrical activity of biological systems. Initially, we generated a scalable intracellular electrode platform based on vertical nanowires that allows for parallel electrical interfacing to multiple mammalian neurons. Our prototype device consisted of 16 individually addressable stimulation/recording sites, each containing an array of 9 electrically active silicon nanowires. We showed that these vertical nanowire electrode arrays could intracellularly record and stimulate neuronal activity in dissociated cultures of rat cortical neurons similar to patch clamp electrodes. In addition, we used our intracellular electrode platform to measure multiple individual synaptic connections, which enables the reconstruction of the functional connectivity maps of neuronal circuits. In order to expand and improve the capability of this functional prototype device we designed and fabricated a new hybrid chip that combines a front-side nanowire-based interface for neuronal recording with backside complementary metal oxide semiconductor (CMOS) circuits for on-chip multiplexing, voltage control for stimulation, signal amplification, and signal processing. Individual chips contain 1024 stimulation/recording sites enabling large-scale interfacing of neuronal networks with single cell resolution. Through electrical and electrochemical characterization of the devices, we demonstrated their enhanced functionality at a massively parallel scale. In our initial cell experiments, we achieved intracellular stimulations and recordings of changes in the membrane potential in a variety of cells including: HEK293T, cardiomyocytes, and rat cortical neurons. This demonstrated the device capability for single-cell-resolution recording/stimulation which when extended to a large number of neurons in a massively parallel fashion will enable the functional mapping of a complex neuronal network.

Two-wavelength backscattering lidar for stand off detection of aerosols

NASA Astrophysics Data System (ADS)

Mierczyk, Zygmunt; Zygmunt, Marek; Gawlikowski, Andrzej; Gietka, Andrzej; Kaszczuk, Miroslawa; Knysak, Piotr; Mlodzianko, Andrzej; Muzal, Michal; Piotrowski, Wiesław; Wojtanowski, Jacek

2008-10-01

Following article presents LIDAR for stand off detection of aerosols which was constructed in Institute of Optoelectronics in Military University of Technology. LIDAR is a DISC type system (DIfferential SCattering) and is based on analysis of backscattering signal for two wavelengths (λ1 = 1064 nm and λ2 = 532 nm) - the first and the second harmonic of Nd:YAG laser. Optical receiving system is consisted of aspherical mirror lens, two additional mirrors and a system of interference filters. In detection system of LIDAR a silicon avalanche photodiode and two different amplifiers were used. Whole system is mounted on a specialized platform designed for possibility of LIDAR scanning movements. LIDAR is computer controlled. The compiled software enables regulation of the scanning platform work, gain control, and control of data processing and acquisition system. In the article main functional elements of LIDAR are shown and typical parameters of system work and construction are presented. One presented also first results of research with use of LIDAR. The aim of research was to detect and characterize scattering aerosol, both natural and anthropogenic one. For analyses of natural aerosols, cumulus cloud was used. For analyses of anthropogenic aerosols one used three various pyrotechnic mixtures (DM11, M2, M16) which generate smoke of different parameters. All scattering centers were firstly well described and theoretical analyses were conducted. Results of LIDAR research were compared with theoretical analyses and general conclusions concerning correctness of LIDAR work and its application were drawn.

WDM mid-board optics for chip-to-chip wavelength routing interconnects in the H2020 ICT-STREAMS

NASA Astrophysics Data System (ADS)

Kanellos, G. T.; Pleros, N.

2017-02-01

Multi-socket server boards have emerged to increase the processing power density on the board level and further flatten the data center networks beyond leaf-spine architectures. Scaling however the number of processors per board puts current electronic technologies into challenge, as it requires high bandwidth interconnects and high throughput switches with increased number of ports that are currently unavailable. On-board optical interconnection has proved the potential to efficiently satisfy the bandwidth needs, but their use has been limited to parallel links without performing any smart routing functionality. With CWDM optical interconnects already a commodity, cyclical wavelength routing proposed to fit the datacom for rack-to-rack and board-to-board communication now becomes a promising on-board routing platform. ICT-STREAMS is a European research project that aims to combine WDM parallel on-board transceivers with a cyclical AWGR, in order to create a new board-level, chip-to-chip interconnection paradigm that will leverage WDM parallel transmission to a powerful wavelength routing platform capable to interconnect multiple processors with unprecedented bandwidth and throughput capacity. Direct, any-to-any, on-board interconnection of multiple processors will significantly contribute to further flatten the data centers and facilitate east-west communication. In the present communication, we present ICT-STREAMS on-board wavelength routing architecture for multiple chip-to-chip interconnections and evaluate the overall system performance in terms of throughput and latency for several schemes and traffic profiles. We also review recent advances of the ICT-STREAMS platform key-enabling technologies that span from Si in-plane lasers and polymer based electro-optical circuit boards to silicon photonics transceivers and photonic-crystal amplifiers.

Metasurface Freeform Nanophotonics.

PubMed

Zhan, Alan; Colburn, Shane; Dodson, Christopher M; Majumdar, Arka

2017-05-10

Freeform optics aims to expand the toolkit of optical elements by allowing for more complex phase geometries beyond rotational symmetry. Complex, asymmetric curvatures are employed to enhance the performance of optical components while minimizing their size. Unfortunately, these high curvatures and complex forms are often difficult to manufacture with current technologies, especially at the micron scale. Metasurfaces are planar sub-wavelength structures that can control the phase, amplitude, and polarization of incident light, and can thereby mimic complex geometric curvatures on a flat, wavelength-scale thick surface. We present a methodology for designing analogues of freeform optics using a silicon nitride based metasurface platform for operation at visible wavelengths. We demonstrate a cubic phase plate with a point spread function exhibiting enhanced depth of field over 300 micron along the optical axis with potential for performing metasurface-based white light imaging, and an Alvarez lens with a tunable focal length range of over 2.5 mm corresponding to a change in optical power of ~1600 diopters with 100 micron of total mechanical displacement. The adaptation of freeform optics to a sub-wavelength metasurface platform allows for further miniaturization of optical components and offers a scalable route toward implementing near-arbitrary geometric curvatures in nanophotonics.

A method for evaluating photovoltaic potential in China based on GIS platform

NASA Astrophysics Data System (ADS)

Wang, L. Z.; Tan, H. W.; Ji, L.; Wang, D.

2017-11-01

Solar photovoltaic systems are commonly utilized in China. However, the associated research is still lack of its resource potential analysis in all regions in China. Based on the existed data about solar radiation and system conversion efficiency data, a new method for distributed photovoltaic potential assessment has been presented. The experiment of three kinds of solar photovoltaic system has been set up for the purpose of analyzing the relationship between conversion efficiency and environmental parameters. This paper fits the relationship between conversion efficiency and solar radiation intensity. This method takes into account the amount of solar radiation that is effectively generated and drives away the weak values. With the spatial analysis function of geographic information system (GIS) platform, frequency distribution of solar radiation intensity and PV potential in China can be derived. Furthermore, analytical results show that monocrystalline-silicon PV generation in the north-western and northern areas have reached a level of more than 200 kWh/(m2.a), making those areas be suitable for the development of PV system. However, the potential for southwest areas reaches a level of only 130 kWh/(m2.a). This paper can provide the baseline reference for solar energy development planning.

Integrated digital printing of flexible circuits for wireless sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mei, Ping; Whiting, Gregory L.; Schwartz, David E.; Ng, Tse Nga; Krusor, Brent S.; Ready, Steve E.; Daniel, George; Veres, Janos; Street, Bob

2016-09-01

Wireless sensing has broad applications in a wide variety of fields such as infrastructure monitoring, chemistry, environmental engineering and cold supply chain management. Further development of sensing systems will focus on achieving light weight, flexibility, low power consumption and low cost. Fully printed electronics provide excellent flexibility and customizability, as well as the potential for low cost and large area applications, but lack solutions for high-density, high-performance circuitry. Conventional electronics mounted on flexible printed circuit boards provide high performance but are not digitally fabricated or readily customizable. Incorporation of small silicon dies or packaged chips into a printed platform enables high performance without compromising flexibility or cost. At PARC, we combine high functionality c-Si CMOS and digitally printed components and interconnects to create an integrated platform that can read and process multiple discrete sensors. Our approach facilitates customization to a wide variety of sensors and user interfaces suitable for a broad range of applications including remote monitoring of health, structures and environment. This talk will describe several examples of printed wireless sensing systems. The technologies required for these sensor systems are a mix of novel sensors, printing processes, conventional microchips, flexible substrates and energy harvesting power solutions.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

PubMed

Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír

2016-03-07

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Chronic Conjunctivitis due to Nocardia nova Complex Formation on a Silicone Stent: A Case Report and Review of the Literature.

PubMed

Micheletti, John M; Agrawal, Megha; Matoba, Alice Y; Marx, Douglas P

2015-01-01

Nocardial conjunctivitis associated with silicone tubing is an extremely rare finding. The authors present a case of a 52-year-old woman with previous dacryocystorhinostomy and silicone tube placement 3 years prior who presented with OD redness and discharge for 1 week. On examination, the patient was noted to have mucoid discharge and crusting surrounding the silicone tube. The tube debris was sampled, and the culture was positive for Nocardia nova complex sensitive to trimethoprim/sulfamethoxazole and amikacin. Silicone tube colonization and N. nova complex conjunctivitis are both rare but should be considered in the differential diagnosis of patients with indwelling silicone tubes presenting with chronic conjunctivitis resistant to fluoroquinolones and tobramycin.

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

Dewetting and deposition of thin films with insoluble surfactants from curved silicone hydrogel substrates.

PubMed

Bhamla, M Saad; Balemans, Caroline; Fuller, Gerald G

2015-07-01

We investigate the stabilizing effect of insoluble surfactant monolayers on thin aqueous films. We first describe an experimental platform that enables the formation of aqueous films laden with dipalmitoylphosphatidylcholine (DPPC) monolayers on curved silicone hydrogel (SiHy) substrates. We show that these surfactant layers extend the lifetime of the aqueous films. The films eventually "dewet" by the nucleation and growth of dry areas and the onset of this dewetting can be controlled by the surface rheology of the DPPC layer. We thus demonstrate that increasing the interfacial rheology of the DPPC layer leads to stable films that delay dewetting. We also show that dewetting can be exploited to controllably pattern the underlying curved SiHy substrates with DPPC layers. Copyright © 2015 Elsevier Inc. All rights reserved.

Breather soliton dynamics in microresonators

NASA Astrophysics Data System (ADS)

Yu, Mengjie; Jang, Jae K.; Okawachi, Yoshitomo; Griffith, Austin G.; Luke, Kevin; Miller, Steven A.; Ji, Xingchen; Lipson, Michal; Gaeta, Alexander L.

2017-02-01

The generation of temporal cavity solitons in microresonators results in coherent low-noise optical frequency combs that are critical for applications in spectroscopy, astronomy, navigation or telecommunications. Breather solitons also form an important part of many different classes of nonlinear wave systems, manifesting themselves as a localized temporal structure that exhibits oscillatory behaviour. To date, the dynamics of breather solitons in microresonators remains largely unexplored, and its experimental characterization is challenging. Here we demonstrate the excitation of breather solitons in two different microresonator platforms based on silicon nitride and on silicon. We investigate the dependence of the breathing frequency on pump detuning and observe the transition from period-1 to period-2 oscillation. Our study constitutes a significant contribution to understanding the soliton dynamics within the larger context of nonlinear science.

Ultralow-Loss CMOS Copper Plasmonic Waveguides.

PubMed

Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

2016-01-13

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Probing the low thermal conductivity of single-crystalline porous Si nanowires

NASA Astrophysics Data System (ADS)

Zhao, Yunshan; Lina Yang Collaboration; Lingyu Kong Collaboration; Baowen Li Collaboration; John T L Thong Collaboration; Kedar Hippalgaonkar Collaboration

Pore-like structures provide a novel way to reduce the thermal conductivity of silicon nanowires, compared to both smooth-surface VLS nanowires and rough EE nanowires. Because of enhanced phonon scattering with interface and decrease in phonon transport path, the porous nanostructures show reduction in thermal conductance by few orders of magnitude. It proves to be extremely challenging to evaluate porosity accurately in an experimental manner and further understand its effect on thermal transport. In this study, we use the newly developed electron-beam based micro-electrothermal device technique to study the porosity dependent thermal conductivity of mesoporous silicon nanowires that have single-crystalline scaffolding. Based on the Casino simulation, the power absorbed by the nanowire, coming from the loss of travelling electron energy, has a linear relationship with it cross section. The relationship has been verified experimentally as well. Monte Carlo simulation is carried out to theoretically predict the thermal conductivity of silicon nanowires with a specific value of porosity. These single-crystalline porous silicon nanowires show extremely low thermal conductivity, even below the amorphous limit. These structures together with our experimental techniques provide a particularly intriguing platform to understand the phonon transport in nanoscale and aid the performance improvement in future nanowires-based devices.

Constructing polyamidoamine dendrons from poly(poly(ethylene glycol) monomethacrylate) brushes grafted from planar silicon hydride surfaces for biomedical applications

NASA Astrophysics Data System (ADS)

Liu, Xiang; Zheng, Hong-Ning; Yan, Qin; Wang, Cuie; Ma, Yin-Zhou; Tang, Yan-Chun; Xiao, Shou-Jun

2011-06-01

A facile approach was established to construct polyamidoamine (PAMAM) dendrons from polymer brushes of poly(poly(ethylene glycol) monomethacrylate) (Si-g-P(PEGMA-OH)) grafted from a planar silicon hydride surface. First the Si-g-P(PEGMA-OH) brushes were grown via surface-initiated atom transfer radical polymerization with robust Si-C links on silicon surfaces. The side-chain hydroxyl groups of Si-g-P(PEGMA-OH) were chlorinated with thionyl chloride and further chlorines were substituted with amino groups of ethylenediamine, giving terminal primary amines. Borrowing the solution synthesis approach, we constructed second and third generations of PAMAM dendrons on-chip by surface-initiated alternative growth of two monomers, methyl acrylate and ethylenediamine. Two applications of silicon-based PAMAM dendrons were shown: the dense amino groups were activated via a cross-linker, N-succinimidyl-6-maleimidylhexanoate, to capture a free-thiol-carrying peptide of oxytocin and the third generation of PAMAM dendrons was used as a platform to on-chip synthesize a three amino acid peptide of Arg-Gly-Asp (RGD). The above conclusions were mainly derived from a home-built multiple transmission-reflection infrared spectroscopy, and complemented by X-ray photoelectron spectroscopy, UV-Vis spectroscopy and matrix-assisted laser desorption/ionization-time of flight-mass spectrometry.

Chemical Interaction-Guided, Metal-Free Growth of Large-Area Hexagonal Boron Nitride on Silicon-Based Substrates.

PubMed

Behura, Sanjay; Nguyen, Phong; Debbarma, Rousan; Che, Songwei; Seacrist, Michael R; Berry, Vikas

2017-05-23

Hexagonal boron nitride (h-BN) is an ideal platform for interfacing with two-dimensional (2D) nanomaterials to reduce carrier scattering for high-quality 2D electronics. However, scalable, transfer-free growth of hexagonal boron nitride (h-BN) remains a challenge. Currently, h-BN-based 2D heterostructures require exfoliation or chemical transfer of h-BN grown on metals resulting in small areas or significant interfacial impurities. Here, we demonstrate a surface-chemistry-influenced transfer-free growth of large-area, uniform, and smooth h-BN directly on silicon (Si)-based substrates, including Si, silicon nitride (Si 3 N 4 ), and silicon dioxide (SiO 2 ), via low-pressure chemical vapor deposition. The growth rates increase with substrate electronegativity, Si < Si 3 N 4 < SiO 2 , consistent with the adsorption rates calculated for the precursor molecules via atomistic molecular dynamics simulations. Under graphene with high grain density, this h-BN film acts as a polymer-free, planar-dielectric interface increasing carrier mobility by 3.5-fold attributed to reduced surface roughness and charged impurities. This single-step, chemical interaction guided, metal-free growth mechanism of h-BN for graphene heterostructures establishes a potential pathway for the design of complex and integrated 2D-heterostructured circuitry.

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

DTIC Science & Technology

2017-03-01

need of high efficiency with high temperature operation eliminates essentially all laser diode technologies except VCSELs. Therefore scaling of the...CW laser diode and separate modulator. Lower diagram circuitry shows the case for a DML VCSEL. The small gain volume and high speed modulation...speed of the modulator. However the CW laser that is needed for the modulator appears to create a technological roadblock for laser diode platforms

All-Printed Flexible and Stretchable Electronics.

PubMed

Mohammed, Mohammed G; Kramer, Rebecca

2017-05-01

A fully automated additive manufacturing process that produces all-printed flexible and stretchable electronics is demonstrated. The printing process combines soft silicone elastomer printing and liquid metal processing on a single high-precision 3D stage. The platform is capable of fabricating extremely complex conductive circuits, strain and pressure sensors, stretchable wires, and wearable circuits with high yield and repeatability. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities.

PubMed

Cai, Wei; Yang, Yongchao; Gao, Xumin; Yuan, Jialei; Yuan, Wei; Zhu, Hongbo; Wang, Yongjin

2016-03-21

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

Fabrication and characterization of a chemically oxidized-nanostructured porous silicon based biosensor implementing orienting protein A.

PubMed

Naveas, Nelson; Hernandez-Montelongo, Jacobo; Pulido, Ruth; Torres-Costa, Vicente; Villanueva-Guerrero, Raúl; Predestinación García Ruiz, Josefa; Manso-Silván, Miguel

2014-03-01

Nanostructured porous silicon (PSi) elicits as a very attractive material for future biosensing systems due to its high surface area, biocompatibility and well-established fabrication methods. In order to engineer its performance as a biosensor transducer platform, the density of immunoglobulins properly immobilized and oriented onto the surface needs to be optimized. In this work we fabricated and characterized a novel biosensing system focusing on the improvement of the biofunctionalization cascade. The system consists on a chemically oxidized PSi platform derivatized with 3-aminopropyltriethoxysilane (APTS) that is coupled to Staphylococcus protein A (SpA). The chemical oxidation has previously demonstrated to enhance the biofunctionalization process and here "by implementing SpA" a molecularly oriented immunosensor is achieved. The biosensor system is characterized in terms of its chemical composition, wettability and optical reflectance. Finally, this system is successfully exploited to develop a biosensor for detecting asymmetric dimethylarginine (ADMA), an endogenous molecule involved in cardiovascular diseases. Therefore, this work is relevant from the point of view of design and optimization of the biomolecular immobilization cascade on PSi surfaces with the added value of contribution to the development of new assays for detecting ADMA with a view on prevention of cardiovascular diseases. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel nanoplasmonic biosensor integrated in a microfluidic channel

NASA Astrophysics Data System (ADS)

Solis-Tinoco, V.; Sepulveda, B.; Lechuga, L. M.

2015-06-01

An important motivation of the actual biosensor research is to develop a multiplexed sensing platform of high sensitivity fabricated with large-scale and low-cost technologies for applications such as diagnosis and monitoring of diseases, drug discovery and environmental control. Biosensors based on localized plasmon resonance (LSPR) have demonstrated to be a novel and effective platform for quantitative detection of biological and chemical analytes. Here, we describe a novel label-free nanobiosensor consisting of an array of closely spaced, vertical, elastomeric nanopillars capped with plasmonic gold nanodisks in a SU-8 channel. The principle is based on the refractive index sensing using the LSPR of gold nanodisks. The fabrication of the nanobiosensor is based on replica molding technique and gold nanodisks are incorporated on the polymer structures by e-beam evaporation. In this work, we provide the strategies for controlling the silicon nanostructure replication using thermal polymers and photopolymers with different Young's modulus, in order to minimize the common distortions in the process and to obtain a reliable replica of the Si master. The master mold of the biosensor consists of a hexagonal array of silicon nanopillars, whose diameter is ~200 nm, and whose height can range from 250 nm to 1.300 μm, separated 400 nm from the center to center, integrated in a SU-8 microfluidic channel.

High resolution microphotonic needle for endoscopic imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tadayon, Mohammad Amin; Mohanty, Aseema; Roberts, Samantha P.; Barbosa, Felippe; Lipson, Michal

2017-02-01

GRIN (Graded index) lens have revolutionized micro endoscopy enabling deep tissue imaging with high resolution. The challenges of traditional GRIN lenses are their large size (when compared with the field of view) and their limited resolution. This is because of the relatively weak NA in standard graded index lenses. Here we introduce a novel micro-needle platform for endoscopy with much higher resolution than traditional GRIN lenses and a FOV that corresponds to the whole cross section of the needle. The platform is based on polymeric (SU-8) waveguide integrated with a microlens micro fabricated on a silicon substrate using a unique molding process. Due to the high index of refraction of the material the NA of the needle is much higher than traditional GRIN lenses. We tested the probe in a fluorescent dye solution (19.6 µM Alexa Flour 647 solution) and measured a numerical aperture of 0.25, focal length of about 175 µm and minimal spot size of about 1.6 µm. We show that the platform can image a sample with the field of view corresponding to the cross sectional area of the waveguide (80x100 µm2). The waveguide size can in principle be modified to vary size of the imaging field of view. This demonstration, combined with our previous work demonstrating our ability to implant the high NA needle in a live animal, shows that the proposed system can be used for deep tissue imaging with very high resolution and high field of view.

Multilayered photonic integration on SOI platform using waveguide-based bridge structure

NASA Astrophysics Data System (ADS)

Majumder, Saikat; Chakraborty, Rajib

2018-06-01

A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

CMUT Fabrication Based On A Thick Buried Oxide Layer.

PubMed

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O; Khuri-Yakub, Butrus T

2010-10-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required - in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate.

CMUT Fabrication Based On A Thick Buried Oxide Layer

PubMed Central

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O.; Khuri-Yakub, Butrus T.

2010-01-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required – in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate. PMID:22685377

Chemical Insight Into The Origin of Red and Blue Photoluminescence Arising From Freestanding Silicon Nanocrystals

PubMed Central

Dasog, Mita; Yang, Zhenyu; Regli, Sarah; Atkins, Tonya M.; Faramus, Angelique; Singh, Mani P.; Muthuswamy, Elayaraja; Kauzlarich, Susan M.; Tilley, Richard D.; Veinot, Jonathan G. C.

2013-01-01

Silicon nanocrystals (Si NCs) are attractive functional materials. They are compatible with standard electronics and communications platforms as well being biocompatible. Numerous methods have been developed to realize size-controlled Si NC synthesis. While these procedures produce Si NCs that appear identical, their optical responses can differ dramatically. Si NCs prepared using high-temperature methods routinely exhibit photoluminescence agreeing with the effective mass approximation (EMA), while those prepared via solution methods exhibit blue emission that is somewhat independent of particle size. Despite many proposals, a definitive explanation for this difference has been elusive for no less than a decade. This apparent dichotomy brings into question our understanding of Si NC properties and potentially limits the scope of their application. The present contribution takes a substantial step forward toward identifying the origin of the blue emission that is not expected based upon EMA predictions. It describes a detailed comparison of Si NCs obtained from three of the most widely cited procedures as well as the conversion of red-emitting Si NCs to blue-emitters upon exposure to nitrogen containing reagents. Analysis of the evidence is consistent with the hypothesis that the presence of trace nitrogen and oxygen even at the ppm level in Si NCs gives rise to the blue emission. PMID:23394574

Chemical insight into the origin of red and blue photoluminescence arising from freestanding silicon nanocrystals.

PubMed

Dasog, Mita; Yang, Zhenyu; Regli, Sarah; Atkins, Tonya M; Faramus, Angelique; Singh, Mani P; Muthuswamy, Elayaraja; Kauzlarich, Susan M; Tilley, Richard D; Veinot, Jonathan G C

2013-03-26

Silicon nanocrystals (Si NCs) are attractive functional materials. They are compatible with standard electronics and communications platforms and are biocompatible. Numerous methods have been developed to realize size-controlled Si NC synthesis. While these procedures produce Si NCs that appear identical, their optical responses can differ dramatically. Si NCs prepared using high-temperature methods routinely exhibit photoluminescence agreeing with the effective mass approximation (EMA), while those prepared via solution methods exhibit blue emission that is somewhat independent of particle size. Despite many proposals, a definitive explanation for this difference has been elusive for no less than a decade. This apparent dichotomy brings into question our understanding of Si NC properties and potentially limits the scope of their application. The present contribution takes a substantial step forward toward identifying the origin of the blue emission that is not expected based upon EMA predictions. It describes a detailed comparison of Si NCs obtained from three of the most widely cited procedures as well as the conversion of red-emitting Si NCs to blue emitters upon exposure to nitrogen-containing reagents. Analysis of the evidence is consistent with the hypothesis that the presence of trace nitrogen and oxygen even at the parts per million level in Si NCs gives rise to the blue emission.

Construction and Characterization of a Novel Vocal Fold Bioreactor

PubMed Central

Zerdoum, Aidan B.; Tong, Zhixiang; Bachman, Brendan; Jia, Xinqiao

2014-01-01

In vitro engineering of mechanically active tissues requires the presentation of physiologically relevant mechanical conditions to cultured cells. To emulate the dynamic environment of vocal folds, a novel vocal fold bioreactor capable of producing vibratory stimulations at fundamental phonation frequencies is constructed and characterized. The device is composed of a function generator, a power amplifier, a speaker selector and parallel vibration chambers. Individual vibration chambers are created by sandwiching a custom-made silicone membrane between a pair of acrylic blocks. The silicone membrane not only serves as the bottom of the chamber but also provides a mechanism for securing the cell-laden scaffold. Vibration signals, generated by a speaker mounted underneath the bottom acrylic block, are transmitted to the membrane aerodynamically by the oscillating air. Eight identical vibration modules, fixed on two stationary metal bars, are housed in an anti-humidity chamber for long-term operation in a cell culture incubator. The vibration characteristics of the vocal fold bioreactor are analyzed non-destructively using a Laser Doppler Vibrometer (LDV). The utility of the dynamic culture device is demonstrated by culturing cellular constructs in the presence of 200-Hz sinusoidal vibrations with a mid-membrane displacement of 40 µm. Mesenchymal stem cells cultured in the bioreactor respond to the vibratory signals by altering the synthesis and degradation of vocal fold-relevant, extracellular matrix components. The novel bioreactor system presented herein offers an excellent in vitro platform for studying vibration-induced mechanotransduction and for the engineering of functional vocal fold tissues. PMID:25145349

Construction and characterization of a novel vocal fold bioreactor.

PubMed

Zerdoum, Aidan B; Tong, Zhixiang; Bachman, Brendan; Jia, Xinqiao

2014-08-01

In vitro engineering of mechanically active tissues requires the presentation of physiologically relevant mechanical conditions to cultured cells. To emulate the dynamic environment of vocal folds, a novel vocal fold bioreactor capable of producing vibratory stimulations at fundamental phonation frequencies is constructed and characterized. The device is composed of a function generator, a power amplifier, a speaker selector and parallel vibration chambers. Individual vibration chambers are created by sandwiching a custom-made silicone membrane between a pair of acrylic blocks. The silicone membrane not only serves as the bottom of the chamber but also provides a mechanism for securing the cell-laden scaffold. Vibration signals, generated by a speaker mounted underneath the bottom acrylic block, are transmitted to the membrane aerodynamically by the oscillating air. Eight identical vibration modules, fixed on two stationary metal bars, are housed in an anti-humidity chamber for long-term operation in a cell culture incubator. The vibration characteristics of the vocal fold bioreactor are analyzed non-destructively using a Laser Doppler Vibrometer (LDV). The utility of the dynamic culture device is demonstrated by culturing cellular constructs in the presence of 200-Hz sinusoidal vibrations with a mid-membrane displacement of 40 µm. Mesenchymal stem cells cultured in the bioreactor respond to the vibratory signals by altering the synthesis and degradation of vocal fold-relevant, extracellular matrix components. The novel bioreactor system presented herein offers an excellent in vitro platform for studying vibration-induced mechanotransduction and for the engineering of functional vocal fold tissues.

Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

NASA Astrophysics Data System (ADS)

Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

2008-02-01

Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

Fully Tunable Silicon Nanowire Arrays Fabricated by Soft Nanoparticle Templating.

PubMed

Rey, By Marcel; Elnathan, Roey; Ditcovski, Ran; Geisel, Karen; Zanini, Michele; Fernandez-Rodriguez, Miguel-Angel; Naik, Vikrant V; Frutiger, Andreas; Richtering, Walter; Ellenbogen, Tal; Voelcker, Nicolas H; Isa, Lucio

2016-01-13

We demonstrate a fabrication breakthrough to produce large-area arrays of vertically aligned silicon nanowires (VA-SiNWs) with full tunability of the geometry of the single nanowires and of the whole array, paving the way toward advanced programmable designs of nanowire platforms. At the core of our fabrication route, termed "Soft Nanoparticle Templating", is the conversion of gradually compressed self-assembled monolayers of soft nanoparticles (microgels) at a water-oil interface into customized lithographical masks to create VA-SiNW arrays by means of metal-assisted chemical etching (MACE). This combination of bottom-up and top-down techniques affords excellent control of nanowire etching site locations, enabling independent control of nanowire spacing, diameter and height in a single fabrication route. We demonstrate the fabrication of centimeter-scale two-dimensional gradient photonic crystals exhibiting continuously varying structural colors across the entire visible spectrum on a single silicon substrate, and the formation of tunable optical cavities supported by the VA-SiNWs, as unambiguously demonstrated through numerical simulations. Finally, Soft Nanoparticle Templating is combined with optical lithography to create hierarchical and programmable VA-SiNW patterns.

Hydrogen adsorption in metal-decorated silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Singh, Ram Sevak; Solanki, Ankit

2016-09-01

Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

PubMed

Tang, Wei; Picraux, S Tom; Huang, Jian Yu; Gusak, Andriy M; Tu, King-Ning; Dayeh, Shadi A

2013-06-12

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. Here, using in situ high-resolution transmission electron microscopy (HRTEM), we capture single events during heterogeneous nucleation and atomic layer reaction of nickel silicide at various crystalline boundaries in Si nanochannels for the first time. We show through systematic experiments and analytical modeling that unlike other typical face-centered cubic materials such as copper or silicon the twin defects in NiSi2 have high interfacial energies. We observe that these twin defects dramatically change the behavior of new phase nucleation and can have direct implications for ultrascaled devices that are prone to defects or may utilize them to improve device performance.

Extended Hubbard model for mesoscopic transport in donor arrays in silicon

NASA Astrophysics Data System (ADS)

Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

2017-12-01

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Gluing silicon with silicone

NASA Astrophysics Data System (ADS)

Abt, I.; Fox, H.; Moshous, B.; Richter, R. H.; Riechmann, K.; Rietz, M.; Riedl, J.; Denis, R. St; Wagner, W.

1998-02-01

Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.

A novel preparation method for silicone oil nanoemulsions and its application for coating hair with silicone

PubMed Central

Hu, Zhenhua; Liao, Meiling; Chen, Yinghui; Cai, Yunpeng; Meng, Lele; Liu, Yajun; Lv, Nan; Liu, Zhenguo; Yuan, Weien

2012-01-01

Background Silicone oil, as a major component in conditioner, is beneficial in the moisture preservation and lubrication of hair. However, it is difficult for silicone oil to directly absorb on the hair surface because of its hydrophobicity. Stable nanoemulsions containing silicone oil may present as a potential solution to this problem. Methods Silicone oil nanoemulsions were prepared using the oil-in-water method with nonionic surfactants. Emulsion particle size and distribution were characterized by scanning electron microscopy. The kinetic stability of this nanoemulsion system was investigated under accelerated stability tests and long-term storage. The effect of silicone oil deposition on hair was examined by analyzing the element of hair after treatment of silicone oil nanoemulsions. Results Nonionic surfactants such as Span 80 and Tween 80 are suitable emulsifiers to prepare oil-in-water nanoemulsions that are both thermodynamically stable and can enhance the absorption of silicone oil on hair surface. Conclusion The silicone oil-in-water nanoemulsions containing nonionic surfactants present as a promising solution to improve the silicone oil deposition on the hair surface for hair care applications. PMID:23166436

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

DOE PAGES

Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...

2016-08-09

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less

Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

NASA Astrophysics Data System (ADS)

Liu, Qifa; Wang, Wei

2018-01-01

Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.

Wafer integrated micro-scale concentrating photovoltaics

NASA Astrophysics Data System (ADS)

Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

2017-09-01

Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

Integrated nanopore sensing platform with sub-microsecond temporal resolution

PubMed Central

Rosenstein, Jacob K; Wanunu, Meni; Merchant, Christopher A; Drndic, Marija; Shepard, Kenneth L

2012-01-01

Nanopore sensors have attracted considerable interest for high-throughput sensing of individual nucleic acids and proteins without the need for chemical labels or complex optics. A prevailing problem in nanopore applications is that the transport kinetics of single biomolecules are often faster than the measurement time resolution. Methods to slow down biomolecular transport can be troublesome and are at odds with the natural goal of high-throughput sensing. Here we introduce a low-noise measurement platform that integrates a complementary metal-oxide semiconductor (CMOS) preamplifier with solid-state nanopores in thin silicon nitride membranes. With this platform we achieved a signal-to-noise ratio exceeding five at a bandwidth of 1 MHz, which to our knowledge is the highest bandwidth nanopore recording to date. We demonstrate transient signals as brief as 1 μs from short DNA molecules as well as current signatures during molecular passage events that shed light on submolecular DNA configurations in small nanopores. PMID:22426489

A Sol-gel Integrated Dual-readout Microarray Platform for Quantification and Identification of Prostate-specific Antigen.

PubMed

Lee, SangWook; Lee, Jong Hyun; Kwon, Hyuck Gi; Laurell, Thomas; Jeong, Ok Chan; Kim, Soyoun

2018-01-01

Here, we report a sol-gel integrated affinity microarray for on-chip matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) that enables capture and identification of prostate?specific antigen (PSA) in samples. An anti-PSA antibody (H117) was mixed with a sol?gel, and the mixture was spotted onto a porous silicon (pSi) surface without additional surface modifications. The antibody easily penetrates the sol-gel macropore fluidic network structure, making possible high affinities. To assess the capture affinity of the platform, we performed a direct assay using fluorescein isothiocyanate-labeled PSA. Pure PSA was subjected to on-chip MALDI-TOF-MS analysis, yielding three clear mass peptide peaks (m/z = 1272, 1407, and 1872). The sol-gel microarray platform enables dual readout of PSA both fluorometric and MALDI-TOF MS analysis in biological samples. Here we report a useful method for a means for discovery of biomarkers in complex body fluids.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Silicon carbide semiconductor technology for high temperature and radiation environments

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.

1993-01-01

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Foundry Technologies Focused on Environmental and Ecological Applications

NASA Astrophysics Data System (ADS)

Roizin, Ya.; Lisiansky, M.; Pikhay, E.

Solutions allowing fabrication of remote control systems with integrated sensors (motes) were introduced as a part of CMOS foundry production platform and verified on silicon. The integrated features include sensors employing principles previously verified in the development of ultra-low power consuming non-volatile memories (C-Flash, MRAM) and components allowing low-power energy harvesting (low voltage rectifiers, high -voltage solar cells). The developed systems are discussed with emphasis on their environmental and security applications.

Axillary silicone lymphadenopathy presenting with a lump and altered sensation in the breast: a case report

PubMed Central

2009-01-01

Introduction Silicone lymphadenopathy is a rare but recognised complication of procedures involving the use of silicone. It has a poorly understood mechanism but is thought to occur following the transportation of silicone particles from silicone-containing prostheses to lymph nodes by macrophages. Case presentation We report of a case involving a 35-year-old woman who presented to the breast clinic with a breast lump and altered sensation below her left nipple 5 years after bilateral cosmetic breast augmentations. A small lump was detected inferior to the nipple but clinical examination and initial ultrasound investigation showed both implants to be intact. However, mammography and magnetic resonance imaging of both breasts revealed both intracapsular and extracapsular rupture of the left breast prosthesis. The patient went on to develop a flu-like illness and tender lumps in the left axilla and right mastoid regions. An excision biopsy of the left axillary lesion and replacement of the ruptured implant was performed. Subsequent histological analysis showed that the axillary lump was a lymph node containing large amounts of silicone. Conclusion The exclusion of malignancy remains the priority when dealing with lumps in the breast or axilla. Silicone lymphadenopathy should however be considered as a differential diagnosis in patients in whom silicone prostheses are present. PMID:19830102

Plasma jet printing of electronic materials on flexible and nonconformal objects.

PubMed

Gandhiraman, Ram P; Jayan, Vivek; Han, Jin-Woo; Chen, Bin; Koehne, Jessica E; Meyyappan, M

2014-12-10

We present a novel approach for the room-temperature fabrication of conductive traces and their subsequent site-selective dielectric encapsulation for use in flexible electronics. We have developed an aerosol-assisted atmospheric pressure plasma-based deposition process for efficiently depositing materials on flexible substrates. Silver nanowire conductive traces and silicon dioxide dielectric coatings for encapsulation were deposited using this approach as a demonstration. The paper substrate with silver nanowires exhibited a very low change in resistance upon 50 cycles of systematic deformation, exhibiting high mechanical flexibility. The applicability of this process to print conductive traces on nonconformal 3D objects was also demonstrated through deposition on a 3D-printed thermoplastic object, indicating the potential to combine plasma printing with 3D printing technology. The role of plasma here includes activation of the material present in the aerosol for deposition, increasing the deposition rate, and plasma polymerization in the case of inorganic coatings. The demonstration here establishes a low-cost, high-throughput, and facile process for printing electronic components on nonconventional platforms.

Alternative technological development for RF hybridization

NASA Astrophysics Data System (ADS)

Antônio Finardi, Célio; da Fontoura Ponchet, André; Battesini Adamo, Cristina; Flacker, Alexander; Cotrin Teixeira, Ricardo; Panepucci, Roberto Ricardo

2017-03-01

The paper presents a technological solution for high frequency packaging platform evaluated up to 40 GHz. The main purpose of this development was to define an alternative hybrid technology that is more flexible and faster to prototype compared with thin film or multi chip module (MCM-D). The alternative technology also shows adequate performance for high bit rate solutions integrating optical and electronics blocks. This approach consists of a soft substrate (laminate material), plating processes (electroless Ni-P/Au, electrolytic Au) and lithography patterning. Ground coplanar waveguide was used for microwave structures with excellent ground planes connections due to easy via holes implementation. We present results of high frequency packaging of important RF blocks, such as integrated broadband bias-T, transimpedance amplifier ICs and silicon photonics optical modulators. The paper demonstrates a solution for high frequency hybridization that can be implemented with standard substrates, designed with any shape and with large numbers of metalized via holes and compatible with usual assembling techniques.

Single Hit Energy-resolved Laue Diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Shamim; Suggit, Matthew J.; Stubley, Paul G.

2015-05-15

In situ white light Laue diffraction has been successfully used to interrogate the structure of single crystal materials undergoing rapid (nanosecond) dynamic compression up to megabar pressures. However, information on strain state accessible via this technique is limited, reducing its applicability for a range of applications. We present an extension to the existing Laue diffraction platform in which we record the photon energy of a subset of diffraction peaks. This allows for a measurement of the longitudinal and transverse strains in situ during compression. Consequently, we demonstrate measurement of volumetric compression of the unit cell, in addition to the limitedmore » aspect ratio information accessible in conventional white light Laue. We present preliminary results for silicon, where only an elastic strain is observed. VISAR measurements show the presence of a two wave structure and measurements show that material downstream of the second wave does not contribute to the observed diffraction peaks, supporting the idea that this material may be highly disordered, or has undergone large scale rotation.« less

Accurate calculation of field and carrier distributions in doped semiconductors

NASA Astrophysics Data System (ADS)

Yang, Wenji; Tang, Jianping; Yu, Hongchun; Wang, Yanguo

2012-06-01

We use the numerical squeezing algorithm(NSA) combined with the shooting method to accurately calculate the built-in fields and carrier distributions in doped silicon films (SFs) in the micron and sub-micron thickness range and results are presented in graphical form for variety of doping profiles under different boundary conditions. As a complementary approach, we also present the methods and the results of the inverse problem (IVP) - finding out the doping profile in the SFs for given field distribution. The solution of the IVP provides us the approach to arbitrarily design field distribution in SFs - which is very important for low dimensional (LD) systems and device designing. Further more, the solution of the IVP is both direct and much easy for all the one-, two-, and three-dimensional semiconductor systems. With current efforts focused on the LD physics, knowing of the field and carrier distribution details in the LD systems will facilitate further researches on other aspects and hence the current work provides a platform for those researches.

A Serious Complication of Illicit Silicone Injections: Latent Silicone Embolization Syndrome after Incision and Drainage of Local Injection Site.

PubMed

Purdy-Payne, Erin K; Green, Jillian; Zenoni, Scott; Evans, Alexander N; Bilski, Tracy R

2015-08-01

Silicone embolization syndrome, a serious adverse effect of illicit silicone injections by laypersons, occurs when silicone particles enter the circulation and shower the lungs and other vital organs. We review the literature on silicone embolization syndrome and describe a unique case of the syndrome that developed after a latent period of several months, upon surgical debridement of an injection site abscess. In the scientific literature, silicone embolization syndrome has been well described and multiple presentations have been delineated. Immediate presentation with a rapidly fatal course occurs in cases of erroneous intra-vascular injection, in which large volumes of silicone occlude pulmonary arteries and cause cor pulmonale. Insidious presentation of progressive respiratory distress and systemic inflammatory response syndrome occurs in cases of peri-vascular injection, caused by gradual vascular infiltration by smaller silicone emboli that shower pulmonary capillaries diffusely, causing alveolar hemorrhage and inflammation. Rarely, latent cases have presented months to years later upon trauma to the original site, which disrupts the sequestered siliconoma, allowing re-exposure to the immune system and the opportunity for vascular infiltration. To the best of our knowledge, this is the first description of silicone embolization syndrome that occurred after surgical manipulation of the site. It has important management implications for patients with a history of prior silicone injections at a site being considered for surgical intervention. Strategies for managing this potential complication include adding a regimen of daily debridement, aggressive ventilator support, and maintaining close observation in an intensive care unit (ICU) or progressive care unit (PCU) during the high-risk post-operative period. Alternatively, when possible, surgeons may avoid disruption of the siliconoma by trialing medical management of localized inflammation or using alternative procedures such as image-guided wide local excision or liposuction with fat transfer.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

PubMed Central

Chakravarty, Swapnajit; Yang, Chun-Ju; Wang, Zheng; Tang, Naimei; Fan, Donglei; Chen, Ray T.

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed. PMID:25829549

High-frequency and high-quality silicon carbide optomechanical microresonators

PubMed Central

Lu, Xiyuan; Lee, Jonathan Y.; Lin, Qiang

2015-01-01

Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a fm · Qm product as high as 9.47 × 1012 Hz. The strong optomechanical coupling allows us to efficiently excite and probe the coherent mechanical oscillation by optical waves. The demonstrated devices, in combination with the superior thermal property, chemical inertness, and defect characteristics of SiC, show great potential for applications in metrology, sensing, and quantum photonics, particularly in harsh environments that are challenging for other device platforms. PMID:26585637

Low-Actuation Voltage MEMS Digital-to-Analog Converter with Parylene Spring Structures.

PubMed

Ma, Cheng-Wen; Lee, Fu-Wei; Liao, Hsin-Hung; Kuo, Wen-Cheng; Yang, Yao-Joe

2015-08-28

We propose an electrostatically-actuated microelectromechanical digital-to-analog converter (M-DAC) device with low actuation voltage. The spring structures of the silicon-based M-DAC device were monolithically fabricated using parylene-C. Because the Young's modulus of parylene-C is considerably lower than that of silicon, the electrostatic microactuators in the proposed device require much lower actuation voltages. The actuation voltage of the proposed M-DAC device is approximately 6 V, which is less than one half of the actuation voltages of a previously reported M-DAC equipped with electrostatic microactuators. The measured total displacement of the proposed three-bit M-DAC is nearly 504 nm, and the motion step is approximately 72 nm. Furthermore, we demonstrated that the M-DAC can be employed as a mirror platform with discrete displacement output for a noncontact surface profiling system.

Small sensitivity to temperature variations of Si-photonic Mach-Zehnder interferometer using Si and SiN waveguides

NASA Astrophysics Data System (ADS)

Hiraki, Tatsurou; Fukuda, Hiroshi; Yamada, Koji; Yamamoto, Tsuyoshi

2015-03-01

We demonstrated a small sensitivity to temperature variations of delay-line Mach-Zehnder interferometer (DL MZI) on a Si photonics platform. The key technique is to balance a thermo-optic effect in the two arms by using waveguide made of different materials. With silicon and silicon nitride waveguides, the fabricated DL MZI with a free-spectrum range of ~40 GHz showed a wavelength shift of -2.8 pm/K with temperature variations, which is 24 times smaller than that of the conventional Si-waveguide DL MZI. We also demonstrated the decoding of the 40-Gbit/s differential phase-shift keying signals to on-off keying signals with various temperatures. The tolerable temperature variation for the acceptable power penalty was significantly improved due to the small wavelength shifts.

A compact thermo-optical multimode-interference silicon-based 1 × 4 nano-photonic switch.

PubMed

Zhou, Haifeng; Song, Junfeng; Chee, Edward K S; Li, Chao; Zhang, Huijuan; Lo, Guoqiang

2013-09-09

An ultra-compact multimode-interference (MMI)-based 1 × 4 nano-photonic switch is demonstrated by employing silicon thermo-optical effect on SOI platform. The device performance is systematically characterized by comprehensively investigating the constituent building blocks, including 1 × 4 power splitter, 4 × 4 MMI coupler and groove-isolated thermo-optical heaters. An instructive model is established to statistically estimate the required power consumption and investigate the influence of the power imbalance of the 4 × 4 MMI coupler on the switching performance. At the designed wavelength of 1550 nm, the average insertion loss of different switching states is 1.7 dB, and the transmission imbalance is 1.05 dB. The worst extinction ratio and crosstalk of all the output ports reach 11.48 dB and -11.38 dB, respectively.

The effects of gamma irradiation on micro-hotplates with integrated temperature sensing diodes

NASA Astrophysics Data System (ADS)

Francis, Laurent A.; André, Nicolas; Boufouss, El Hafed; Gérard, Pierre; Ali, Zeeshan; Udrea, Florin; Flandre, Denis

2014-06-01

Micro-hotplates are MEMS structures of interest for low-power gas sensing, lab-on-chips and space applications, such as micro-thrusters. Micro-hotplates usually consist in a Joule heater suspended on a thin-film membrane while thermopiles or thermodiodes are added as temperature sensors and for feedback control. The implementation of micro-hotplates using a Silicon-On-Insulator technology makes them suited for co-integration with analog integrated circuits and operation at elevated environmental temperatures in a range from 200 to 300 °C, while the heater allows thermal cycling in the kHz regime up to 700 °C, e.g. necessary for the activation of gas sensitive metal-oxide on top of the membrane, with mWrange electrical power. The demonstrated resistance of micro-hotplates to gamma radiations can extend their use in nuclear plants, biomedical sterilization and space applications. In this work, we present results from electrical tests on micro-hotplates during their irradiation by Cobalt-60 gamma rays with total doses up to 18.90 kGy. The micro-hotplates are fabricated using a commercial 1.0 μm Silicon-On-Insulator technology with a tungsten Joule heater, which allows power-controlled operation above 600 °C with less than 60 mW, and temperature sensing silicon diodes located on the membrane and on the bulk. We show the immunity of the sensing platform to the harsh radiation environment. Beside the good tolerance of the thermodiodes and the membrane materials to the total radiation dose, the thermodiode located on the heating membrane is constantly annealed during irradiation and keeps a constant sensitivity while post-irradiation annealing can restore the thermodiode.

Complications of penile augmentation by use of nonmedical industrial silicone.

PubMed

Shamsodini, Ahmad; Al-Ansari, Abdulla A; Talib, Raidh A; Alkhafaji, Haidar M; Shokeir, Ahmed A; Toth, Csaba

2012-12-01

Penile augmentation has been reported in the literature by injecting various materials by nonmedical persons. This study aims to present our experience in management of penile augmentation complications associated with injection or implantation of industrial silicone by lay persons. Early surgical intervention can lead to faster recovery and better cosmetic and functional outcome. Two patients had injection of industrial silicone paste, and the other two had industrial silicone ring implantation. All the patients except one were presented after 13 months of the procedure. Patients with industrial silicone ring presented with multiple sinuses of penile skin in one, and abscess discharge pus from the site of implanted ring in the other. Both patients with injected silicone paste presented with swelling and deformity of the penis that interfered with their intercourse. Silicone ring patients underwent skin incision and drainage of the infected materials and extraction of the implants with delayed skin closure. The two patients with silicone paste injection underwent two-stage penile reconstructions using scrotal flap. Patients with extracted rings had smooth recovery with acceptable cosmetic outcome. One of them was not initially satisfied with the length of his penis that was overcome by short-term use of vacuum device. One of the patients with silicone paste injection had wound infection that was successfully treated with local wound care. Both had satisfactory penile length and acceptable cosmetic outcome. All patients had normal erectile function postoperatively. Complications of using industrial silicone injection can be drastic, and awareness of the public can avoid using of this material for penile augmentation. © 2011 International Society for Sexual Medicine.

A nanowaveguide platform for collective atom-light interaction

NASA Astrophysics Data System (ADS)

Meng, Y.; Lee, J.; Dagenais, M.; Rolston, S. L.

2015-08-01

We propose a nanowaveguide platform for collective atom-light interaction through evanescent field coupling. We have developed a 1 cm-long silicon nitride nanowaveguide can use evanescent fields to trap and probe an ensemble of 87Rb atoms. The waveguide has a sub-micrometer square mode area and was designed with tapers for high fiber-to-waveguide coupling efficiencies at near-infrared wavelengths (750 nm to 1100 nm). Inverse tapers in the platform adiabatically transfer a weakly guided mode of fiber-coupled light into a strongly guided mode with an evanescent field to trap atoms and then back to a weakly guided mode at the other end of the waveguide. The coupling loss is -1 dB per facet (˜80% coupling efficiency) at 760 nm and 1064 nm, which is estimated by a propagation loss measurement with waveguides of different lengths. The proposed platform has good thermal conductance and can guide high optical powers for trapping atoms in ultra-high vacuum. As an intermediate step, we have observed thermal atom absorption of the evanescent component of a nanowaveguide and have demonstrated the U-wire mirror magneto-optical trap that can transfer atoms to the proximity of the surface.

All-soft, battery-free, and wireless chemical sensing platform based on liquid metal for liquid- and gas-phase VOC detection.

PubMed

Kim, Min-Gu; Alrowais, Hommood; Kim, Choongsoon; Yeon, Pyungwoo; Ghovanloo, Maysam; Brand, Oliver

2017-06-27

Lightweight, flexible, stretchable, and wireless sensing platforms have gained significant attention for personal healthcare and environmental monitoring applications. This paper introduces an all-soft (flexible and stretchable), battery-free, and wireless chemical microsystem using gallium-based liquid metal (eutectic gallium-indium alloy, EGaIn) and poly(dimethylsiloxane) (PDMS), fabricated using an advanced liquid metal thin-line patterning technique based on soft lithography. Considering its flexible, stretchable, and lightweight characteristics, the proposed sensing platform is well suited for wearable sensing applications either on the skin or on clothing. Using the microfluidic sensing platform, detection of liquid-phase and gas-phase volatile organic compounds (VOC) is demonstrated using the same design, which gives an opportunity to have the sensor operate under different working conditions and environments. In the case of liquid-phase chemical sensing, the wireless sensing performance and microfluidic capacitance tunability for different dielectric liquids are evaluated using analytical, numerical, and experimental approaches. In the case of gas-phase chemical sensing, PDMS is used both as a substrate and a sensing material. The gas sensing performance is evaluated and compared to a silicon-based, solid-state gas sensor with a PDMS sensing film.

Magnetic resonance imaging properties of multimodality anthropomorphic silicone rubber phantoms for validating surgical robots and image guided therapy systems

NASA Astrophysics Data System (ADS)

Cheung, Carling L.; Looi, Thomas; Drake, James; Kim, Peter C. W.

2012-02-01

The development of image guided robotic and mechatronic platforms for medical applications requires a phantom model for initial testing. Finding an appropriate phantom becomes challenging when the targeted patient population is pediatrics, particularly infants, neonates or fetuses. Our group is currently developing a pediatricsized surgical robot that operates under fused MRI and laparoscopic video guidance. To support this work, we describe a method for designing and manufacturing silicone rubber organ phantoms for the purpose of testing the robotics and the image fusion system. A surface model of the organ is obtained and converted into a mold that is then rapid-prototyped using a 3D printer. The mold is filled with a solution containing a particular ratio of silicone rubber to slacker additive to achieve a specific set of tactile and imaging characteristics in the phantom. The expected MRI relaxation times of different ratios of silicone rubber to slacker additive are experimentally quantified so that the imaging properties of the phantom can be matched to those of the organ that it represents. Samples of silicone rubber and slacker additive mixed in ratios ranging from 1:0 to 1:1.5 were prepared and scanned using inversion recovery and spin echo sequences with varying TI and TE, respectively, in order to fit curves to calculate the expected T1 and T2 relaxation times of each ratio. A set of infantsized abdominal organs was prepared, which were successfully sutured by the robot and imaged using different modalities.

Prototype readout electronics and silicon strip detector study for the silicon tracking system at compressed baryonic matter experiment

NASA Astrophysics Data System (ADS)

Kasiński, Krzysztof; Szczygieł, Robert; Gryboś, Paweł

2011-10-01

This paper presents the prototype detector readout electronics for the STS (Silicon Tracking System) at CBM (Compressed Baryonic Matter) experiment at FAIR, GSI (Helmholtzzentrum fuer Schwerionenforschung GmbH) in Germany. The emphasis has been put on the strip detector readout chip and its interconnectivity with detector. Paper discusses the impact of the silicon strip detector and interconnection cable construction on the overall noise of the system and architecture of the TOT02 readout ASIC. The idea and problems of the double-sided silicon detector usage are also presented.

Ultra-short silicon MMI duplexer

NASA Astrophysics Data System (ADS)

Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

2012-11-01

The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

Software platform for simulation of a prototype proton CT scanner.

PubMed

Giacometti, Valentina; Bashkirov, Vladimir A; Piersimoni, Pierluigi; Guatelli, Susanna; Plautz, Tia E; Sadrozinski, Hartmut F-W; Johnson, Robert P; Zatserklyaniy, Andriy; Tessonnier, Thomas; Parodi, Katia; Rosenfeld, Anatoly B; Schulte, Reinhard W

2017-03-01

Proton computed tomography (pCT) is a promising imaging technique to substitute or at least complement x-ray CT for more accurate proton therapy treatment planning as it allows calculating directly proton relative stopping power from proton energy loss measurements. A proton CT scanner with a silicon-based particle tracking system and a five-stage scintillating energy detector has been completed. In parallel a modular software platform was developed to characterize the performance of the proposed pCT. The modular pCT software platform consists of (1) a Geant4-based simulation modeling the Loma Linda proton therapy beam line and the prototype proton CT scanner, (2) water equivalent path length (WEPL) calibration of the scintillating energy detector, and (3) image reconstruction algorithm for the reconstruction of the relative stopping power (RSP) of the scanned object. In this work, each component of the modular pCT software platform is described and validated with respect to experimental data and benchmarked against theoretical predictions. In particular, the RSP reconstruction was validated with both experimental scans, water column measurements, and theoretical calculations. The results show that the pCT software platform accurately reproduces the performance of the existing prototype pCT scanner with a RSP agreement between experimental and simulated values to better than 1.5%. The validated platform is a versatile tool for clinical proton CT performance and application studies in a virtual setting. The platform is flexible and can be modified to simulate not yet existing versions of pCT scanners and higher proton energies than those currently clinically available. © 2017 American Association of Physicists in Medicine.

Heterogeneous Silicon III-V Mode-Locked Lasers

NASA Astrophysics Data System (ADS)

Davenport, Michael Loehrlein

Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

RF performances of inductors integrated on localized p+-type porous silicon regions

PubMed Central

2012-01-01

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate. PMID:23009746

High-Brightness Lasers with Spectral Beam Combining on Silicon

NASA Astrophysics Data System (ADS)

Stanton, Eric John

Modern implementations of absorption spectroscopy and infrared-countermeasures demand advanced performance and integration of high-brightness lasers, especially in the molecular fingerprint spectral region. These applications, along with others in communication, remote-sensing, and medicine, benefit from the light source comprising a multitude of frequencies. To realize this technology, a single multi-spectral optical beam of near-diffraction-limited divergence is created by combining the outputs from an array of laser sources. Full integration of such a laser is possible with direct bonding of several epitaxially-grown chips to a single silicon (Si) substrate. In this platform, an array of lasers is defined with each gain material, creating a densely spaced set of wavelengths similar to wavelength division multiplexing used in communications. Scaling the brightness of a laser typically involves increasing the active volume to produce more output power. In the direction transverse to the light propagation, larger geometries compromise the beam quality. Lengthening the cavity provides only limited scaling of the output power due to the internal losses. Individual integrated lasers have low brightness due to combination of thermal effects and high optical intensities. With heterogeneous integration, many lasers can be spectrally combined on a single integrated chip to scale brightness in a compact platform. Recent demonstrations of 2.0-microm diode and 4.8-microm quantum cascade lasers on Si have extended this heterogeneous platform beyond the telecommunications band to the mid-infrared. In this work, low-loss beam combining elements spanning the visible to the mid-infrared are developed and a high-brightness multi-spectral laser is demonstrated in the range of 4.6-4.7-microm wavelengths. An architecture is presented where light is combined in multiple stages: first within the gain-bandwidth of each laser material and then coarsely between each spectral band to a single output waveguide. All components are demonstrated on a common material platform with a Si substrate, which lends feasibility to the complete system integration. Particular attention is focused on improving the efficiency of arrayed waveguide gratings (AWGs), used in the dense wavelength combining stage. This requires development of a refined characterization technique involving AWGs in a ring-resonator configuration to reduce measurement uncertainty. New levels of low-loss are achieved for visible, near-infrared, and mid-infrared multiplexing devices. Also, a multi-spectral laser in the mid-infrared is demonstrated by integrating an array of quantum cascade lasers and an AWG with Si waveguides. The output power and spectra are measured, demonstrating efficient beam combining and power scaling. Thus, a bright laser source in the mid-infrared has been demonstrated, along with an architecture and the components for incorporating visible and near-infrared optical bands.

Conversion of the Aerodynamic Preliminary Analysis System (APAS) to an IBM PC Compatible Format

NASA Technical Reports Server (NTRS)

Kruep, John M.

1995-01-01

The conversion of the Aerodynamic Preliminary Analysis System (APAS) software from a Silicon Graphics UNIX-based platform to a DOS-based IBM PC compatible is discussed. Relevant background information is given, followed by a discussion of the steps taken to accomplish the conversion and a discussion of the type of problems encountered during the conversion. A brief comparison of aerodynamic data obtained using APAS with data from another source is also made.

Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

NASA Astrophysics Data System (ADS)

Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

2016-03-01

Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

Axillary silicone lymphadenopathy secondary to augmentation mammaplasty

PubMed Central

Dragoumis, Dimitrios M.; Assimaki, Anthoula S.; Vrizas, Triantafyllos I.; Tsiftsoglou, Aris P.

2010-01-01

We report a case involving a 45-year-old woman, who presented with an axillary mass 10 years after bilateral cosmetic augmentation mammaplasty. A lump was detected in the left axilla, and subsequent mammography and magnetic resonance imaging demonstrated intracapsular rupture of the left breast prosthesis. An excisional biopsy of the left axillary lesion and replacement of the ruptured implant was performed. Histological analysis showed that the axillary lump was lymph nodes containing large amounts of silicone. Silicone lymphadenopathy is an obscure complication of procedures involving the use of silicone. It is thought to occur following the transit of silicone droplets from breast implants to lymph nodes by macrophages and should always be considered as a differential diagnosis in patients in whom silicone prostheses are present. PMID:21217983

New technologies for solar energy silicon - Cost analysis of BCL process

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K.-Y.; Fang, C. S.; Lutwack, R.; Hsu, G.; Leven, H.

1980-01-01

New technologies for producing polysilicon are being developed to provide lower cost material for solar cells which convert sunlight into electricity. This article presents results for the BCL Process, which produces the solar-cell silicon by reduction of silicon tetrachloride with zinc vapor. Cost, sensitivity, and profitability analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon by the BCL Process. Profitability analysis indicates a sales price of $12.1-19.4 per kg of silicon (1980 dollars) at a 0-25 per cent DCF rate of return on investment after taxes. These results indicate good potential for meeting the goal of providing lower cost material for silicon solar cells.

Laser-induced fluorescence detection platform for point-of-care testing

NASA Astrophysics Data System (ADS)

Berner, Marcel; Hilbig, Urs; Schubert, Markus B.; Gauglitz, Günter

2017-08-01

Point-of-care testing (POCT) devices for continuous low-cost monitoring of critical patient parameters require miniaturized and integrated setups for performing quick high-sensitivity analyses, away from central clinical laboratories. This work presents a novel and promising laser-induced fluorescence platform for measurements in direct optical test formats that leads towards such powerful POCT devices based on fluorescence-labeled immunoassays. Ultimate sensitivity of thin film photodetectors, integrated with microfluidics, and a comprehensive optimization of all system components aim at low-level signal detection in the targeted biosensor application. The setup acquires fluorescence signals from the volume of a microfluidic channel. An innovative sandwiching process forms a flow channel in the microfluidic chips by embedding laser-cut double-sided adhesive tapes. The custom fit of amorphous silicon based photodiode arrays to the geometry of the flow channel enables miniaturization, fully adequate for POCT devices. A free-beam laser excitation with line focus provides excellent alignment stability, allows for easy and reliable swapping of the disposable microfluidic chips, and therewith greatly improves the ease of use of the resulting integrated device. As a proof-of-concept of this novel in-volume measurement approach, the limit of detection for the dye DY636-COOH in pure water as a model fluorophore is examined and found to be 26 nmol l-1 .

Characterization of the initial level and migration of silicone oil lubricant in empty prefilled syringes for biologics using infrared spectroscopy.

PubMed

Bee, Jared S; Frey, Vadim V; Javed, Urooj; Chung, Jonathan; Corcoran, Marta L; Roussel, Paul S; Krause, Stephan O; Cash, Patricia W; Bishop, Steven M; Dimitrova, Mariana N

2014-01-01

Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. Glass prefillable syringes are lubricated with silicone oil to ensure functionality and a consistent injection for the end user. If excessive silicone is applied, droplets could potentially result in aggregation of sensitive biopharmaceuticals or clouding of the solution. Therefore, monitoring and optimization of the applied silicone layer is critical for prefilled syringe development. The hydrophobic properties of silicone oil, the potential for assay interference, and the very small quantities applied to prefilled syringes present a challenge for the development of a suitable assay. In this work we present a rapid and simple Fourier transform infrared (FTIR) spectroscopy method for quantitation of total silicone levels applied to prefilled syringes. Level-dependent silicone oil migration occurred over time for empty prefilled syringes stored tip-up. However, migration from all prefilled syringes with between 0.25 and 0.8 mg of initial silicone oil resulted in a stable limiting minimum level of between 0.15 and 0.26 mg of silicone in the syringe reached after 1 to 4 years of empty tip-up storage. The results of the FTIR assay correlated well with non-destructive reflectometry characterization of the syringes. This assay can provide valuable data for selection of a robust initial silicone oil target and quality control of prefilled syringes intended for biopharmaceuticals. © PDA, Inc. 2014.

Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Levine, S. R.

1995-01-01

A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

PubMed

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

PubMed Central

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-01-01

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms

NASA Astrophysics Data System (ADS)

Shen, Ming-Yi

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples. We have successfully shown that the kinetic monte carlo (KMC) I/I simulation can precisely model both the silicon amorphization and the arsenic distribution in the fin by comparing the KMC simulation results with TEM images. The results of the KMC I/I simulation show that at high dose rate more activated arsenic dopants were in the source-drain extension (SDE) region. This finding matches with the increased silicon amorphization caused by the high dose-rate I/I, given that the arsenic atoms could be more easily activated by the solid phase epitaxial regrowth process. This increased silicon amorphization led to not only higher arsenic activation near the spacer edge, but also less arsenic atoms straggling into the channel. Hence, it is possible to improve the throughput of the ion implanter when the dopants are implanted at high dose rate if the same doping level with a lower wafer dose can be achieved. In addition, the leakage current might also be reduced due to less undesired dopants in the channel. However, the twin defects from the problematic Si{111} recrystallization is well-known to cause excessive leakage current to the FinFET. This drawback can offset the benefits of the high dose rate I/I mentioned above. This work produced the first attempt at simulating the electrical impact of twin defects on advanced-node (10 nm) FinFET device performance. It was found that the high dose-rate I/I causes more twin defects in the silicon fin, and the physical locations of these defects were close to the channel. The defects undesirably induced trap-assisted band-to-band tunneling near the drain, which increased the leakage current. This issue could be mitigated by using asymmetrical gate overlap/underlap design or thicker spacer for SDE I/I so that the twin defects are not located in the depletion region near the drain.

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

NASA Astrophysics Data System (ADS)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal-oxide-semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal-oxide-semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal-oxide-semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal-oxide-semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

Process of preparing tritiated porous silicon

DOEpatents

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Good vibrations: Controlling light with sound (Conference Presentation)

NASA Astrophysics Data System (ADS)

Eggleton, Benjamin J.; Choudhary, Amol

2016-10-01

One of the surprises of nonlinear optics, is that light may interact strongly with sound. Intense laser light literally "shakes" the glass in optical fibres, exciting acoustic waves (sound) in the fibre. Under the right conditions, it leads to a positive feedback loop between light and sound termed "Stimulated Brillouin Scattering," or simply SBS. This nonlinear interaction can amplify or filter light waves with extreme precision in frequency which makes it uniquely suited to solve key problems in the fields of defence, biomedicine, wireless communications, spectroscopy and imaging. We have achieved the first demonstration of SBS in compact chip-scale structures, carefully designed so that the optical fields and the acoustic fields are simultaneously confined and guided. This new platform has opened a range of new functionalities that are being applied in communications and defence with breathtaking performance and compactness. My talk will introduce this new field and review our progress and achievements, including silicon based optical phononic processor.

Nonlinear Analyte Concentration Gradients for One-Step Kinetic Analysis Employing Optical Microring Resonators

PubMed Central

Marty, Michael T.; Kuhnline Sloan, Courtney D.; Bailey, Ryan C.; Sligar, Stephen G.

2012-01-01

Conventional methods to probe the binding kinetics of macromolecules at biosensor surfaces employ a stepwise titration of analyte concentrations and measure the association and dissociation to the immobilized ligand at each concentration level. It has previously been shown that kinetic rates can be measured in a single step by monitoring binding as the analyte concentration increases over time in a linear gradient. We report here the application of nonlinear analyte concentration gradients for determining kinetic rates and equilibrium binding affinities in a single experiment. A versatile nonlinear gradient maker is presented, which is easily applied to microfluidic systems. Simulations validate that accurate kinetic rates can be extracted for a wide range of association and dissociation rates, gradient slopes and curvatures, and with models for mass transport. The nonlinear analyte gradient method is demonstrated with a silicon photonic microring resonator platform to measure prostate specific antigen-antibody binding kinetics. PMID:22686186

Full control of far-field radiation via photonic integrated circuits decorated with plasmonic nanoantennas.

PubMed

Sun, Yi-Zhi; Feng, Li-Shuang; Bachelot, Renaud; Blaize, Sylvain; Ding, Wei

2017-07-24

We theoretically develop a hybrid architecture consisting of photonic integrated circuit and plasmonic nanoantennas to fully control optical far-field radiation with unprecedented flexibility. By exploiting asymmetric and lateral excitation from silicon waveguides, single gold nanorod and cascaded nanorod pair can function as component radiation pixels, featured by full 2π phase coverage and nanoscale footprint. These radiation pixels allow us to design scalable on-chip devices in a wavefront engineering fashion. We numerically demonstrate beam collimation with 30° out of the incident plane and nearly diffraction limited divergence angle. We also present high-numerical-aperture (NA) beam focusing with NA ≈0.65 and vector beam generation (the radially-polarized mode) with the mode similarity greater than 44%. This concept and approach constitutes a designable optical platform, which might be a future bridge between integrated photonics and metasurface functionalities.

Nonlinear analyte concentration gradients for one-step kinetic analysis employing optical microring resonators.

PubMed

Marty, Michael T; Sloan, Courtney D Kuhnline; Bailey, Ryan C; Sligar, Stephen G

2012-07-03

Conventional methods to probe the binding kinetics of macromolecules at biosensor surfaces employ a stepwise titration of analyte concentrations and measure the association and dissociation to the immobilized ligand at each concentration level. It has previously been shown that kinetic rates can be measured in a single step by monitoring binding as the analyte concentration increases over time in a linear gradient. We report here the application of nonlinear analyte concentration gradients for determining kinetic rates and equilibrium binding affinities in a single experiment. A versatile nonlinear gradient maker is presented, which is easily applied to microfluidic systems. Simulations validate that accurate kinetic rates can be extracted for a wide range of association and dissociation rates, gradient slopes, and curvatures, and with models for mass transport. The nonlinear analyte gradient method is demonstrated with a silicon photonic microring resonator platform to measure prostate specific antigen-antibody binding kinetics.

A multiplexed chip-based assay system for investigating the functional development of human skeletal myotubes in vitro.

PubMed

Smith, A S T; Long, C J; Pirozzi, K; Najjar, S; McAleer, C; Vandenburgh, H H; Hickman, J J

2014-09-20

This report details the development of a non-invasive in vitro assay system for investigating the functional maturation and performance of human skeletal myotubes. Data is presented demonstrating the survival and differentiation of human myotubes on microscale silicon cantilevers in a defined, serum-free system. These cultures can be stimulated electrically and the resulting contraction quantified using modified atomic force microscopy technology. This system provides a higher degree of sensitivity for investigating contractile waveforms than video-based analysis, and represents the first system capable of measuring the contractile activity of individual human muscle myotubes in a reliable, high-throughput and non-invasive manner. The development of such a technique is critical for the advancement of body-on-a-chip platforms toward application in pre-clinical drug development screens. Copyright © 2014 Elsevier B.V. All rights reserved.

Vertically aligned carbon nanotube probes for monitoring blood cholesterol

NASA Astrophysics Data System (ADS)

Roy, Somenath; Vedala, Harindra; Choi, Wonbong

2006-02-01

Detection of blood cholesterol is of great clinical significance. The amperometric detection technique was used for the enzymatic assay of total cholesterol. Multiwall carbon nanotubes (MWNTs), vertically aligned on a silicon platform, promote heterogeneous electron transfer between the enzyme and the working electrode. Surface modification of the MWNT with a biocompatible polymer, polyvinyl alcohol (PVA), converted the hydrophobic nanotube surface into a highly hydrophilic one, which facilitates efficient attachment of biomolecules. The fabricated working electrodes showed a linear relationship between cholesterol concentration and the output signal. The efficacy of the multiwall carbon nanotubes in promoting heterogeneous electron transfer was evident by distinct electrochemical peaks and higher signal-to-noise ratio as compared to the Au electrode with identical enzyme immobilization protocol. The selectivity of the cholesterol sensor in the presence of common interferents present in human blood, e.g. uric acid, ascorbic acid and glucose, is also reported.

An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

PubMed

Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

2010-05-24

Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

Toward athermal silicon-on-insulator (de)multiplexers in the O-band.

PubMed

Hassan, Karim; Sciancalepore, Corrado; Harduin, Julie; Ferrotti, Thomas; Menezo, Sylvie; Ben Bakir, Badhise

2015-06-01

We report on the design, fabrication, and characterization of a 1×4 silicon-on-insulator (SOI) demultiplexer exhibiting a significant reduction of its thermo-optical sensitivity in the O-band. The optical filtering is achieved by cascading several Mach-Zehnder interferometers (MZIs) fabricated on a 300-nm-thick SOI platform. Owing to an asymmetric design of the confinement for each MZIs, we found an athermal criterium that satisfies the spectral requirements. The thermal sensitivity of the structure is analyzed by a semi-analytical model in order to create an athermal multiplexer. Fiber-to-fiber thermo-optical testing reveals a thermal sensitivity of around 17  pm/°C reduced by 75% compared to the standard devices with promising performances for both the crosstalk (15 dB), the insertion losses (4 dB), and absolute lambda registration (<0.25  nm).