A surface code quantum computer in silicon.

PubMed

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Large-scale quantum photonic circuits in silicon

NASA Astrophysics Data System (ADS)

Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

2016-08-01

Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

Atomistic analysis of valley-orbit hybrid states and inter-dot tunnel rates in a Si double quantum dot

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Rahman, Rajib; Klimeck, Gerhard

2014-03-01

Silicon quantum dots are promising candidates for solid-state quantum computing due to the long spin coherence times in silicon, arising from small spin-orbit interaction and a nearly spin free host lattice. However, the conduction band valley degeneracy adds an additional degree of freedom to the electronic structure, complicating the encoding and operation of qubits. Although the valley and the orbital indices can be uniquely identified in an ideal silicon quantum dot, atomic-scale disorder mixes valley and orbital states in realistic dots. Such valley-orbit hybridization, strongly influences the inter-dot tunnel rates.Using a full-band atomistic tight-binding method, we analyze the effect of atomic-scale interface disorder in a silicon double quantum dot. Fourier transform of the tight-binding wavefunctions helps to analyze the effect of disorder on valley-orbit hybridization. We also calculate and compare inter-dot inter-valley and intra-valley tunneling, in the presence of realistic disorder, such as interface tilt, surface roughness, alloy disorder, and interface charges. The method provides a useful way to compute electronic states in realistically disordered systems without any posteriori fitting parameters.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

PubMed Central

Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

2016-01-01

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

Optimization of a Solid-State Electron Spin Qubit Using Gate Set Tomography (Open Access, Publisher’s Version)

DTIC Science & Technology

2016-10-13

enielse@sandia.gov and a.morello@unsw.edu.au Keywords: quantum computing , silicon, tomography Supplementarymaterial for this article is available online...Abstract State of the art qubit systems are reaching the gatefidelities required for scalable quantum computation architectures. Further improvements in...and addressedwhen the qubit is usedwithin a fault-tolerant quantum computation scheme. 1. Introduction One of themain challenges in the physical

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horibe, Kosuke; Oda, Shunri; Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp

2015-02-23

Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. Themore » lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.« less

CGS-MSFSS Project report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey-Collard, Patrick

2015-10-27

From January 2015 to July 2015, I was doing research at Sandia National Laboratories in Albuquerque, United States. My work there consisted of performing experimental measurements using Sandia’s unique silicon quantum computing platform. The project is about coupling donor spin quantum bits, or qubits, to quantum dots in a silicon nanostructure based on conventional microchip technology. During the project, I devised a new quantum state readout mechanism that allow better, longer lived measurement signals. The measurement (or readout) mechanism is key to any qubit architecture. Next, I was able to demonstrate a quantum manipulation of the two-electron spin states ofmore » the coupled donor and quantum dot system. This constitutes a breakthrough for donor spin qubits in silicon because it could enable larger systems consisting of many qubits. This project will lead to publications in scientific journals, presentations in international conferences, and generates exciting new opportunities for manipulating nature at the nanoscale.« less

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Strong spin-photon coupling in silicon

NASA Astrophysics Data System (ADS)

Samkharadze, N.; Zheng, G.; Kalhor, N.; Brousse, D.; Sammak, A.; Mendes, U. C.; Blais, A.; Scappucci, G.; Vandersypen, L. M. K.

2018-03-01

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot–based spin qubit registers.

A programmable two-qubit quantum processor in silicon

NASA Astrophysics Data System (ADS)

Watson, T. F.; Philips, S. G. J.; Kawakami, E.; Ward, D. R.; Scarlino, P.; Veldhorst, M.; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.; Vandersypen, L. M. K.

2018-03-01

Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing. In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform. Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations. However, as seen with small-scale demonstrations of quantum computers using other types of qubit, combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. Here we overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch–Josza algorithm and the Grover search algorithm—canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85–89 per cent and concurrences of 73–82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.

A programmable two-qubit quantum processor in silicon.

PubMed

Watson, T F; Philips, S G J; Kawakami, E; Ward, D R; Scarlino, P; Veldhorst, M; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, M A; Vandersypen, L M K

2018-03-29

Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing. In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform. Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations. However, as seen with small-scale demonstrations of quantum computers using other types of qubit, combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. Here we overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch-Josza algorithm and the Grover search algorithm-canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85-89 per cent and concurrences of 73-82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.

PubMed

Voisin, B; Maurand, R; Barraud, S; Vinet, M; Jehl, X; Sanquer, M; Renard, J; De Franceschi, S

2016-01-13

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

A CMOS silicon spin qubit

PubMed Central

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.

2016-01-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. PMID:27882926

A CMOS silicon spin qubit

NASA Astrophysics Data System (ADS)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A CMOS silicon spin qubit.

PubMed

Maurand, R; Jehl, X; Kotekar-Patil, D; Corna, A; Bohuslavskyi, H; Laviéville, R; Hutin, L; Barraud, S; Vinet, M; Sanquer, M; De Franceschi, S

2016-11-24

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Shor's quantum factoring algorithm on a photonic chip.

PubMed

Politi, Alberto; Matthews, Jonathan C F; O'Brien, Jeremy L

2009-09-04

Shor's quantum factoring algorithm finds the prime factors of a large number exponentially faster than any other known method, a task that lies at the heart of modern information security, particularly on the Internet. This algorithm requires a quantum computer, a device that harnesses the massive parallelism afforded by quantum superposition and entanglement of quantum bits (or qubits). We report the demonstration of a compiled version of Shor's algorithm on an integrated waveguide silica-on-silicon chip that guides four single-photon qubits through the computation to factor 15.

Spin-wave utilization in a quantum computer

NASA Astrophysics Data System (ADS)

Khitun, A.; Ostroumov, R.; Wang, K. L.

2001-12-01

We propose a quantum computer scheme using spin waves for quantum-information exchange. We demonstrate that spin waves in the antiferromagnetic layer grown on silicon may be used to perform single-qubit unitary transformations together with two-qubit operations during the cycle of computation. The most attractive feature of the proposed scheme is the possibility of random access to any qubit and, consequently, the ability to recognize two qubit gates between any two distant qubits. Also, spin waves allow us to eliminate the use of a strong external magnetic field and microwave pulses. By estimate, the proposed scheme has as high as 104 ratio between quantum system coherence time and the time of a single computational step.

Blueprint for a microwave trapped ion quantum computer.

PubMed

Lekitsch, Bjoern; Weidt, Sebastian; Fowler, Austin G; Mølmer, Klaus; Devitt, Simon J; Wunderlich, Christof; Hensinger, Winfried K

2017-02-01

The availability of a universal quantum computer may have a fundamental impact on a vast number of research fields and on society as a whole. An increasingly large scientific and industrial community is working toward the realization of such a device. An arbitrarily large quantum computer may best be constructed using a modular approach. We present a blueprint for a trapped ion-based scalable quantum computer module, making it possible to create a scalable quantum computer architecture based on long-wavelength radiation quantum gates. The modules control all operations as stand-alone units, are constructed using silicon microfabrication techniques, and are within reach of current technology. To perform the required quantum computations, the modules make use of long-wavelength radiation-based quantum gate technology. To scale this microwave quantum computer architecture to a large size, we present a fully scalable design that makes use of ion transport between different modules, thereby allowing arbitrarily many modules to be connected to construct a large-scale device. A high error-threshold surface error correction code can be implemented in the proposed architecture to execute fault-tolerant operations. With appropriate adjustments, the proposed modules are also suitable for alternative trapped ion quantum computer architectures, such as schemes using photonic interconnects.

A two-qubit logic gate in silicon.

PubMed

Veldhorst, M; Yang, C H; Hwang, J C C; Huang, W; Dehollain, J P; Muhonen, J T; Simmons, S; Laucht, A; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

2015-10-15

Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

NASA Astrophysics Data System (ADS)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal-oxide-semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal-oxide-semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal-oxide-semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal-oxide-semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

Quantum Molecular Dynamics Simulations of Nanotube Tip Assisted Reactions

NASA Technical Reports Server (NTRS)

Menon, Madhu

1998-01-01

In this report we detail the development and application of an efficient quantum molecular dynamics computational algorithm and its application to the nanotube-tip assisted reactions on silicon and diamond surfaces. The calculations shed interesting insights into the microscopic picture of tip surface interactions.

Room temperature high-fidelity holonomic single-qubit gate on a solid-state spin.

PubMed

Arroyo-Camejo, Silvia; Lazariev, Andrii; Hell, Stefan W; Balasubramanian, Gopalakrishnan

2014-09-12

At its most fundamental level, circuit-based quantum computation relies on the application of controlled phase shift operations on quantum registers. While these operations are generally compromised by noise and imperfections, quantum gates based on geometric phase shifts can provide intrinsically fault-tolerant quantum computing. Here we demonstrate the high-fidelity realization of a recently proposed fast (non-adiabatic) and universal (non-Abelian) holonomic single-qubit gate, using an individual solid-state spin qubit under ambient conditions. This fault-tolerant quantum gate provides an elegant means for achieving the fidelity threshold indispensable for implementing quantum error correction protocols. Since we employ a spin qubit associated with a nitrogen-vacancy colour centre in diamond, this system is based on integrable and scalable hardware exhibiting strong analogy to current silicon technology. This quantum gate realization is a promising step towards viable, fault-tolerant quantum computing under ambient conditions.

An addressable quantum dot qubit with fault-tolerant control-fidelity.

PubMed

Veldhorst, M; Hwang, J C C; Yang, C H; Leenstra, A W; de Ronde, B; Dehollain, J P; Muhonen, J T; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

2014-12-01

Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy centres in diamond and phosphorus atoms in silicon. For example, long coherence times were made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here, we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford-based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has dephasing time T2* = 120 μs and coherence time T2 = 28 ms, both orders of magnitude larger than in other types of semiconductor qubit. By gate-voltage-tuning the electron g*-factor we can Stark shift the electron spin resonance frequency by more than 3,000 times the 2.4 kHz electron spin resonance linewidth, providing a direct route to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.

Blueprint for a microwave trapped ion quantum computer

PubMed Central

Lekitsch, Bjoern; Weidt, Sebastian; Fowler, Austin G.; Mølmer, Klaus; Devitt, Simon J.; Wunderlich, Christof; Hensinger, Winfried K.

2017-01-01

The availability of a universal quantum computer may have a fundamental impact on a vast number of research fields and on society as a whole. An increasingly large scientific and industrial community is working toward the realization of such a device. An arbitrarily large quantum computer may best be constructed using a modular approach. We present a blueprint for a trapped ion–based scalable quantum computer module, making it possible to create a scalable quantum computer architecture based on long-wavelength radiation quantum gates. The modules control all operations as stand-alone units, are constructed using silicon microfabrication techniques, and are within reach of current technology. To perform the required quantum computations, the modules make use of long-wavelength radiation–based quantum gate technology. To scale this microwave quantum computer architecture to a large size, we present a fully scalable design that makes use of ion transport between different modules, thereby allowing arbitrarily many modules to be connected to construct a large-scale device. A high error–threshold surface error correction code can be implemented in the proposed architecture to execute fault-tolerant operations. With appropriate adjustments, the proposed modules are also suitable for alternative trapped ion quantum computer architectures, such as schemes using photonic interconnects. PMID:28164154

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

DOE PAGES

Zhang, Jingyuan Linda; Sun, Shuo; Burek, Michael J.; ...

2018-01-29

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into themore » cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength ( g/2π = 4.9 ± 0.3 GHz) and cooperativity ( C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.« less

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jingyuan Linda; Sun, Shuo; Burek, Michael J.

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into themore » cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength ( g/2π = 4.9 ± 0.3 GHz) and cooperativity ( C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.« less

Hybrid spin and valley quantum computing with singlet-triplet qubits.

PubMed

Rohling, Niklas; Russ, Maximilian; Burkard, Guido

2014-10-24

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.

Silicon Quantum Dots with Counted Antimony Donor Implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel Lee

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Interface induced spin-orbit interaction in silicon quantum dots and prospects of scalability

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Wai, Kok; Veldhorst, Menno; Hwang, Jason; Yang, Henry; Klimeck, Gerhard; Dzurak, Andrew; Rahman, Rajib

A scalable quantum computing architecture requires reproducibility over key qubit properties, like resonance frequency, coherence time etc. Randomness in these properties would necessitate individual knowledge of each qubit in a quantum computer. Spin qubits hosted in Silicon (Si) quantum dots (QD) is promising as a potential building block for a large-scale quantum computer, because of their longer coherence times. The Stark shift of the electron g-factor in these QDs has been used to selectively address multiple qubits. From atomistic tight-binding studies we investigated the effect of interface non-ideality on the Stark shift of the g-factor in a Si QD. We find that based on the location of a monoatomic step at the interface with respect to the dot center both the sign and magnitude of the Stark shift change. Thus the presence of interface steps in these devices will cause variability in electron g-factor and its Stark shift based on the location of the qubit. This behavior will also cause varying sensitivity to charge noise from one qubit to another, which will randomize the dephasing times T2*. This predicted device-to-device variability is experimentally observed recently in three qubits fabricated at a Si/Si02 interface, which validates the issues discussed.

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.

PubMed

Muhonen, J T; Laucht, A; Simmons, S; Dehollain, J P; Kalra, R; Hudson, F E; Freer, S; Itoh, K M; Jamieson, D N; McCallum, J C; Dzurak, A S; Morello, A

2015-04-22

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual (31)P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized (31)P nucleus of a single P donor in isotopically purified (28)Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

Dopant atoms as quantum components in silicon nanoscale devices

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

A simple quantum mechanical treatment of scattering in nanoscale transistors

NASA Astrophysics Data System (ADS)

Venugopal, R.; Paulsson, M.; Goasguen, S.; Datta, S.; Lundstrom, M. S.

2003-05-01

We present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling dissipative electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors. The simulation scheme, which solves the nonequilibrium Green's function equations self consistently with Poisson's equation, treats the effect of scattering using a simple approximation inspired by the "Büttiker probes," often used in mesoscopic physics. It is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results are used to highlight quantum effects, discuss the physics of scattering and to relate the quantum mechanical quantities used in our model to experimentally measured low field mobilities. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This paper shows that our approximate treatment of scattering, is an efficient and useful simulation method for modeling electron transport in nanoscale, silicon-on-insulator transistors.

Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

PubMed

Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

2015-07-01

Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

Ab initio characterization of coupling strength for all types of dangling-bond pairs on the hydrogen-terminated Si(100)-2 × 1 surface

NASA Astrophysics Data System (ADS)

Shaterzadeh-Yazdi, Zahra; Sanders, Barry C.; DiLabio, Gino A.

2018-04-01

Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.

High surface area silicon materials: fundamentals and new technology.

PubMed

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Density functional theory calculation of refractive indices of liquid-forming silicon oil compounds

NASA Astrophysics Data System (ADS)

Lee, Sanghun; Park, Sung Soo; Hagelberg, Frank

2012-02-01

A combination of quantum chemical calculation and molecular dynamics simulation is applied to compute refractive indices of liquid-forming silicon oils. The densities of these species are obtained from molecular dynamics simulations based on the NPT ensemble while the molecular polarizabilities are evaluated by density functional theory. This procedure is shown to yield results well compatible with available experimental data, suggesting that it represents a robust and economic route for determining the refractive indices of liquid-forming organic complexes containing silicon.

Quantum error correction in crossbar architectures

NASA Astrophysics Data System (ADS)

Helsen, Jonas; Steudtner, Mark; Veldhorst, Menno; Wehner, Stephanie

2018-07-01

A central challenge for the scaling of quantum computing systems is the need to control all qubits in the system without a large overhead. A solution for this problem in classical computing comes in the form of so-called crossbar architectures. Recently we made a proposal for a large-scale quantum processor (Li et al arXiv:1711.03807 (2017)) to be implemented in silicon quantum dots. This system features a crossbar control architecture which limits parallel single-qubit control, but allows the scheme to overcome control scaling issues that form a major hurdle to large-scale quantum computing systems. In this work, we develop a language that makes it possible to easily map quantum circuits to crossbar systems, taking into account their architecture and control limitations. Using this language we show how to map well known quantum error correction codes such as the planar surface and color codes in this limited control setting with only a small overhead in time. We analyze the logical error behavior of this surface code mapping for estimated experimental parameters of the crossbar system and conclude that logical error suppression to a level useful for real quantum computation is feasible.

Hybrid quantum and molecular mechanics embedded cluster models for chemistry on silicon and silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Shoemaker, James Richard

Fabrication of silicon carbide (SiC) semiconductor devices are of interest for aerospace applications because of their high-temperature tolerance. Growth of an insulating SiO2 layer on SiC by oxidation is a poorly understood process, and sometimes produces interface defects that degrade device performance. Accurate theoretical models of surface chemistry, using quantum mechanics (QM), do not exist because of the huge computational cost of solving Schrodinger's equation for a molecular cluster large enough to represent a surface. Molecular mechanics (MM), which describes a molecule as a collection of atoms interacting through classical potentials, is a fast computational method, good at predicting molecular structure, but cannot accurately model chemical reactions. A new hybrid QM/MM computational method for surface chemistry was developed and applied to silicon and SiC surfaces. The addition of MM steric constraints was shown to have a large effect on the energetics of O atom adsorption on SiC. Adsorption of O atoms on Si-terminated SiC(111) favors above surface sites, in contrast to Si(111), but favors subsurface adsorption sites on C- terminated SiC(111). This difference, and the energetics of C atom etching via CO2 desorption, can explain the observed poor performance of SiC devices in which insulating layers were grown on C-terminated surfaces.

Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.

PubMed

Tettamanzi, Giuseppe Carlo; Hile, Samuel James; House, Matthew Gregory; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y

2017-03-28

The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations.

Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon.

PubMed

Shamim, Saquib; Weber, Bent; Thompson, Daniel W; Simmons, Michelle Y; Ghosh, Arindam

2016-09-14

The atomically precise doping of silicon with phosphorus (Si:P) using scanning tunneling microscopy (STM) promises ultimate miniaturization of field effect transistors. The one-dimensional (1D) Si:P nanowires are of particular interest, retaining exceptional conductivity down to the atomic scale, and are predicted as interconnects for a scalable silicon-based quantum computer. Here, we show that ultrathin Si:P nanowires form one of the most-stable electrical conductors, with the phenomenological Hooge parameter of low-frequency noise being as low as ≈10(-8) at 4.2 K, nearly 3 orders of magnitude lower than even carbon-nanotube-based 1D conductors. A in-built isolation from the surface charge fluctuations due to encapsulation of the wires within the epitaxial Si matrix is the dominant cause for the observed suppression of noise. Apart from quantum information technology, our results confirm the promising prospects for precision-doped Si:P structures in atomic-scale circuitry for the 11 nm technology node and beyond.

A review on single photon sources in silicon carbide.

PubMed

Lohrmann, A; Johnson, B C; McCallum, J C; Castelletto, S

2017-03-01

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

PubMed

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

PubMed Central

House, M. G.; Kobayashi, T.; Weber, B.; Hile, S. J.; Watson, T. F.; van der Heijden, J.; Rogge, S.; Simmons, M. Y.

2015-01-01

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon. PMID:26548556

A silicon-nanowire memory driven by optical gradient force induced bistability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, B.; Institute of Microelectronics, A*STAR; Cai, H., E-mail: caih@ime.a-star.edu.sg

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Positrons vs electrons channeling in silicon crystal: energy levels, wave functions and quantum chaos manifestations

NASA Astrophysics Data System (ADS)

Shul'ga, N. F.; Syshchenko, V. V.; Tarnovsky, A. I.; Solovyev, I. I.; Isupov, A. Yu.

2018-01-01

The motion of fast electrons through the crystal during axial channeling could be regular and chaotic. The dynamical chaos in quantum systems manifests itself in both statistical properties of energy spectra and morphology of wave functions of the individual stationary states. In this report, we investigate the axial channeling of high and low energy electrons and positrons near [100] direction of a silicon crystal. This case is particularly interesting because of the fact that the chaotic motion domain occupies only a small part of the phase space for the channeling electrons whereas the motion of the channeling positrons is substantially chaotic for the almost all initial conditions. The energy levels of transverse motion, as well as the wave functions of the stationary states, have been computed numerically. The group theory methods had been used for classification of the computed eigenfunctions and identification of the non-degenerate and doubly degenerate energy levels. The channeling radiation spectrum for the low energy electrons has been also computed.

Electrostatically defined silicon quantum dots with counted antimony donor implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P.

2016-02-08

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Electrostatically defined silicon quantum dots with counted antimony donor implants

NASA Astrophysics Data System (ADS)

Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.

2016-02-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

NASA Astrophysics Data System (ADS)

Fu, Huixia; Liu, Zheng; Sun, Jia-Tao; Meng, Sheng

Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-r3xr3 surface with a spontaneous weak reconstruction has a strong tendency of ferromagnetism and nontrivial topological properties, characterized by spin polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together gives rise to quantized anomalous Hall effect with a finite Chern number C = -1. This work suggests exciting opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.

Solid State Quantum Computer in Silicon

DTIC Science & Technology

2008-09-30

for photonic entanglement ”, Physical Review A 76, 052312 (2007). S.J. Devitt, A.D. Greentree and L.C.L. Hollenberg, “Information free quantum bus for...77, 100501 (2008). S.J. Devitt, A.D. Greentree, R. Ionicioiu, J.L. O’Brien, W.J. Munro and L.C.L. Hollenberg, “ Photonic module: An on-demand resource...656 (2008). M.I. Makin, J.H. Cole, C. Tahan, L.C.L. Hollenberg and A.D. Greentree, “Quantum phase transitions in photonic cavities with two-level

Rapid Optimization of External Quantum Efficiency of Thin Film Solar Cells Using Surrogate Modeling of Absorptivity.

PubMed

Kaya, Mine; Hajimirza, Shima

2018-05-25

This paper uses surrogate modeling for very fast design of thin film solar cells with improved solar-to-electricity conversion efficiency. We demonstrate that the wavelength-specific optical absorptivity of a thin film multi-layered amorphous-silicon-based solar cell can be modeled accurately with Neural Networks and can be efficiently approximated as a function of cell geometry and wavelength. Consequently, the external quantum efficiency can be computed by averaging surrogate absorption and carrier recombination contributions over the entire irradiance spectrum in an efficient way. Using this framework, we optimize a multi-layer structure consisting of ITO front coating, metallic back-reflector and oxide layers for achieving maximum efficiency. Our required computation time for an entire model fitting and optimization is 5 to 20 times less than the best previous optimization results based on direct Finite Difference Time Domain (FDTD) simulations, therefore proving the value of surrogate modeling. The resulting optimization solution suggests at least 50% improvement in the external quantum efficiency compared to bare silicon, and 25% improvement compared to a random design.

Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits

NASA Astrophysics Data System (ADS)

Song, Yang; Das Sarma, S.

2016-12-01

Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified 28Si and the realization of extremely long spin coherence time in single-donor electrons, the recent experimental focus is on two-coupled donors with the eventual goal of a scaled-up quantum circuit. Motivated by this development, we simulate the statistical distribution of the exchange coupling J between a pair of donors under realistic donor placement straggles, and quantify the errors relative to the intended J value. With J values in a broad range of donor-pair separation ( 5 <|R |<60 nm), we work out various cases systematically, for a target donor separation R0 along the [001], [110] and [111] Si crystallographic directions, with |R0|=10 ,20 or 30 nm and standard deviation σR=1 ,2 ,5 or 10 nm. Our extensive theoretical results demonstrate the great challenge for a prescribed J gate even with just a donor pair, a first step for any scalable Si-donor-based quantum computer.

First-principles simulations of transition metal ions in silicon as potential quantum bits

NASA Astrophysics Data System (ADS)

Ma, He; Seo, Hosung; Galli, Giulia

Optically active spin defects in semiconductors have gained increasing attention in recent years for use as potential solid-state quantum bits (or qubits). Examples include the nitrogen-vacancy center in diamond, transition metal impurities, and rare earth ions. In this talk, we present first-principles theoretical results on group 6 transition metal ion (Chromium, Molybdenum and Tungsten) impurities in silicon, and we investigate their potential use as qubits. We used density functional theory (DFT) to calculate defect formation energies and we found that transition metal ions have lower formation energies at interstitial than substitutional sites. We also computed the electronic structure of the defects with particular attention to the position of the defect energy levels with respect to the silicon band edges. Based on our results, we will discuss the possibility of implementing qubits in silicon using group 6 transition metal ions. This work is supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Quantum confinement of nanocrystals within amorphous matrices

NASA Astrophysics Data System (ADS)

Lusk, Mark T.; Collins, Reuben T.; Nourbakhsh, Zahra; Akbarzadeh, Hadi

2014-02-01

Nanocrystals encapsulated within an amorphous matrix are computationally analyzed to quantify the degree to which the matrix modifies the nature of their quantum-confinement power—i.e., the relationship between nanocrystal size and the gap between valence- and conduction-band edges. A special geometry allows exactly the same amorphous matrix to be applied to nanocrystals of increasing size to precisely quantify changes in confinement without the noise typically associated with encapsulating structures that are different for each nanocrystal. The results both explain and quantify the degree to which amorphous matrices redshift the character of quantum confinement. The character of this confinement depends on both the type of encapsulating material and the separation distance between the nanocrystals within it. Surprisingly, the analysis also identifies a critical nanocrystal threshold below which quantum confinement is not possible—a feature unique to amorphous encapsulation. Although applied to silicon nanocrystals within an amorphous silicon matrix, the methodology can be used to accurately analyze the confinement softening of other amorphous systems as well.

Quantum computing with defects.

PubMed

Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

2010-05-11

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

Quantum Optomechanics with Silicon Nanostructures

NASA Astrophysics Data System (ADS)

Safavi-Naeini, Amir H.

Mechanical resonators are the most basic and ubiquitous physical systems known. In on-chip form, they are used to process high frequency signals in every cell phone, television, and laptop. They have also been in the last few decades in different shapes and forms, a critical part of progress in quantum information sciences with kilogram scale mirrors for gravitational wave detection measuring motion at its quantum limits, and the motion of single ions being used to link qubits for quantum computation. Optomechanics is a field primarily concerned with coupling light to the motion of mechanical structures. This thesis contains descriptions of recent work with mechanical systems in the megahertz to gigahertz frequency range, formed by nanofabricating novel photonic/phononic structures on a silicon chip. These structures are designed to have both optical and mechanical resonances, and laser light is used to address and manipulate their motional degrees of freedom through radiation pressure forces. We laser cool these mechanical resonators to their ground states, and observe for the first time the quantum zero-point motion of a nanomechanical resonator. Conversely, we show that engineered mechanical resonances drastically modify the optical response of our structures, creating large effective optical nonlinearities not present in bulk silicon. We experimentally demonstrate aspects of these nonlinearities by proposing and observing ``electromagnetically induced transparency'' and light slowed down to 6 m/s, as well as wavelength conversion, and generation of nonclassical optical radiation. Finally, the application of optomechanics to longstanding problems in quantum and classical communications are proposed and investigated.

Resonantly driven CNOT gate for electron spins.

PubMed

Zajac, D M; Sigillito, A J; Russ, M; Borjans, F; Taylor, J M; Burkard, G; Petta, J R

2018-01-26

Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon. Copyright © 2018, The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Resonantly driven CNOT gate for electron spins

NASA Astrophysics Data System (ADS)

Zajac, D. M.; Sigillito, A. J.; Russ, M.; Borjans, F.; Taylor, J. M.; Burkard, G.; Petta, J. R.

2018-01-01

To build a universal quantum computer—the kind that can handle any computational task you throw at it—an essential early step is to demonstrate the so-called CNOT gate, which acts on two qubits. Zajac et al. built an efficient CNOT gate by using electron spin qubits in silicon quantum dots, an implementation that is especially appealing because of its compatibility with existing semiconductor-based electronics (see the Perspective by Schreiber and Bluhm). To showcase the potential, the authors used the gate to create an entangled quantum state called the Bell state.

Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sekiguchi, Takeharu; Yoshida, Shunji; Itoh, Kohei M.

2005-09-02

Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter {approx}2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 deg. C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

Modeling Magnetic Properties in EZTB

NASA Technical Reports Server (NTRS)

Lee, Seungwon; vonAllmen, Paul

2007-01-01

A software module that calculates magnetic properties of a semiconducting material has been written for incorporation into, and execution within, the Easy (Modular) Tight-Binding (EZTB) software infrastructure. [EZTB is designed to model the electronic structures of semiconductor devices ranging from bulk semiconductors, to quantum wells, quantum wires, and quantum dots. EZTB implements an empirical tight-binding mathematical model of the underlying physics.] This module can model the effect of a magnetic field applied along any direction and does not require any adjustment of model parameters. The module has thus far been applied to study the performances of silicon-based quantum computers in the presence of magnetic fields and of miscut angles in quantum wells. The module is expected to assist experimentalists in fabricating a spin qubit in a Si/SiGe quantum dot. This software can be executed in almost any Unix operating system, utilizes parallel computing, can be run as a Web-portal application program. The module has been validated by comparison of its predictions with experimental data available in the literature.

Silicon superlattices: Theory and application to semiconductor devices

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1981-01-01

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

PubMed

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

High-fidelity readout and control of a nuclear spin qubit in silicon.

PubMed

Pla, Jarryd J; Tan, Kuan Y; Dehollain, Juan P; Lim, Wee H; Morton, John J L; Zwanenburg, Floris A; Jamieson, David N; Dzurak, Andrew S; Morello, Andrea

2013-04-18

Detection of nuclear spin precession is critical for a wide range of scientific techniques that have applications in diverse fields including analytical chemistry, materials science, medicine and biology. Fundamentally, it is possible because of the extreme isolation of nuclear spins from their environment. This isolation also makes single nuclear spins desirable for quantum-information processing, as shown by pioneering studies on nitrogen-vacancy centres in diamond. The nuclear spin of a (31)P donor in silicon is very promising as a quantum bit: bulk measurements indicate that it has excellent coherence times and silicon is the dominant material in the microelectronics industry. Here we demonstrate electrical detection and coherent manipulation of a single (31)P nuclear spin qubit with sufficiently high fidelities for fault-tolerant quantum computing. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate quantum non-demolition and electrical single-shot readout of the nuclear spin with a readout fidelity higher than 99.8 percent-the highest so far reported for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radio-frequency pulses. For an ionized (31)P donor, we find a nuclear spin coherence time of 60 milliseconds and a one-qubit gate control fidelity exceeding 98 percent. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear-spin-based quantum-information processing.

Out of the lab and into the fab: Nano-alignment as an enabler for Silicon Photonics' next chapter

NASA Astrophysics Data System (ADS)

Jordan, Scott

2017-06-01

The rapid advent of Silicon Photonics presents many challenges for test and packaging. Here we concisely review SiP device attributes that differ significantly from classical photonic configurations, with a view to the future beyond current, connectivity-oriented silicon photonics developments, looking to such endeavors as all-optical computing and quantum computing. The necessity for nano-precision alignment of optical elements in test and packaging operations quickly emerges as the unfilled need. We review the industrial test and packaging solutions developed back in the 1997-2001 photonics boom to address the needs of that era's devices, and map their gaps with the new SiP device classes. Finally we review the new state-of-the-art of recent advances in the field that address these gaps.

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

DOE PAGES

Pica, G.; Lovett, B. W.; Bhatt, R. N.; ...

2016-01-14

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. In this work, we present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalabilitymore » issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. In conclusion, we use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.« less

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE PAGES

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.; ...

2018-01-18

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Rolf Landauer and Charles H. Bennett Award Talk: Experimental development of spin qubits in silicon

NASA Astrophysics Data System (ADS)

Morello, Andrea

The modern information era is built on silicon nanoelectronic devices. The future quantum information era might be built on silicon too, if we succeed in controlling the interactions between individual spins hosted in silicon nanostructures. Spins in silicon constitute excellent solid-state qubits, because of the weak spin-orbit coupling and the possibility to remove nuclear spins from the environment through 28Si isotopic enrichment. Substitutional 31P atoms in silicon behave approximately like hydrogen in vacuum, providing two spin 1/2 qubits - the donor-bound electron and the 31P nucleus - that can be coherently controlled, read out in single-shot, and are naturally coupled through the hyperfine interaction. In isotopically-enriched 28Si, these single-atom qubits have demonstrated outstanding coherence times, up to 35 seconds for the nuclear spin, and 1-qubit gate fidelities well above 99.9% for both the electron and the nucleus. The hyperfine coupling provides a built-in interaction to entangle the two qubits within one atom. The combined initialization, control and readout fidelities result in a violation of Bell's inequality with S = 2 . 70 , a record value for solid-state qubits. Despite being identical atomic systems, 31P atoms can be addressed individually by locally modifying the hyperfine interaction through electrostatic gating. Multi-qubit logic gates can be mediated either by the exchange interaction or by electric dipole coupling. Scaling up beyond a single atom presents formidable challenges, but provides a pathway to building quantum processors that are compatible with standard semiconductor fabrication, and retain a nanometric footprint, important for truly large-scale quantum computers. Work supported by US Army Research Office (W911NF-13-1-0024) and Australian Research Council (CE110001027).

Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

NASA Astrophysics Data System (ADS)

Li, Huashan; Wu, Zhigang; Lusk, Mark

2013-03-01

Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K.

2016-07-25

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots.more » This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.« less

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

PubMed Central

Vinh, N. Q.; Greenland, P. T.; Litvinenko, K.; Redlich, B.; van der Meer, A. F. G.; Lynch, S. A.; Warner, M.; Stoneham, A. M.; Aeppli, G.; Paul, D. J.; Pidgeon, C. R.; Murdin, B. N.

2008-01-01

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Silicon coupled with plasmon nanocavities generates bright visible hot luminescence

NASA Astrophysics Data System (ADS)

Cho, Chang-Hee; Aspetti, Carlos O.; Park, Joohee; Agarwal, Ritesh

2013-04-01

To address the limitations in device speed and performance in silicon-based electronics, there have been extensive studies on silicon optoelectronics with a view to achieving ultrafast optical data processing. The biggest challenge has been to develop an efficient silicon-based light source, because the indirect bandgap of silicon gives rise to extremely low emission efficiencies. Although light emission in quantum-confined silicon at sub-10 nm length scales has been demonstrated, there are difficulties in integrating quantum structures with conventional electronics. It is desirable to develop new concepts to obtain emission from silicon at length scales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in `bulk-sized' silicon coupled with plasmon nanocavities at room temperature, from non-thermalized carrier recombination. The highly enhanced emission (internal quantum efficiency of >1%) in plasmonic silicon, together with its size compatibility with current silicon electronics, provides new avenues for developing monolithically integrated light sources on conventional microchips.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Photonic quantum technologies (Presentation Recording)

NASA Astrophysics Data System (ADS)

O'Brien, Jeremy L.

2015-09-01

The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

All-electric control of donor nuclear spin qubits in silicon

NASA Astrophysics Data System (ADS)

Sigillito, Anthony J.; Tyryshkin, Alexei M.; Schenkel, Thomas; Houck, Andrew A.; Lyon, Stephen A.

2017-10-01

The electronic and nuclear spin degrees of freedom of donor impurities in silicon form ultra-coherent two-level systems that are potentially useful for applications in quantum information and are intrinsically compatible with industrial semiconductor processing. However, because of their smaller gyromagnetic ratios, nuclear spins are more difficult to manipulate than electron spins and are often considered too slow for quantum information processing. Moreover, although alternating current magnetic fields are the most natural choice to drive spin transitions and implement quantum gates, they are difficult to confine spatially to the level of a single donor, thus requiring alternative approaches. In recent years, schemes for all-electrical control of donor spin qubits have been proposed but no experimental demonstrations have been reported yet. Here, we demonstrate a scalable all-electric method for controlling neutral 31P and 75As donor nuclear spins in silicon. Using coplanar photonic bandgap resonators, we drive Rabi oscillations on nuclear spins exclusively using electric fields by employing the donor-bound electron as a quantum transducer, much in the spirit of recent works with single-molecule magnets. The electric field confinement leads to major advantages such as low power requirements, higher qubit densities and faster gate times. Additionally, this approach makes it possible to drive nuclear spin qubits either at their resonance frequency or at its first subharmonic, thus reducing device bandwidth requirements. Double quantum transitions can be driven as well, providing easy access to the full computational manifold of our system and making it convenient to implement nuclear spin-based qudits using 75As donors.

Probing low noise at the MOS interface with a spin-orbit qubit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce amore » spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems« less

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Nanosize relief: from phase masks to antireflection coatings on quartz and silicon

NASA Astrophysics Data System (ADS)

Verevkin, Yu K.; Klimov, A. Yu; Gribkov, B. A.; Petryakov, V. N.; Koposova, E. V.; Olaizola, Santiago M.

2008-11-01

By using the interference of pulsed radiation and a complete lithographic cycle, phase masks on quartz and antireflection structures on quartz and silicon are produced. The transmission of radiation through a corrugated vacuum—solid interface is calculated by solving rigorously an integral equation with the help of a computer program for parameters close to experimental parameters. The results of measurements are in good agreement with calculations. The methods developed in the paper can be used for manufacturing optical and semiconductor devices.

CMOS-compatible photonic devices for single-photon generation

NASA Astrophysics Data System (ADS)

Xiong, Chunle; Bell, Bryn; Eggleton, Benjamin J.

2016-09-01

Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Silica-on-silicon waveguide quantum circuits.

PubMed

Politi, Alberto; Cryan, Martin J; Rarity, John G; Yu, Siyuan; O'Brien, Jeremy L

2008-05-02

Quantum technologies based on photons will likely require an integrated optics architecture for improved performance, miniaturization, and scalability. We demonstrate high-fidelity silica-on-silicon integrated optical realizations of key quantum photonic circuits, including two-photon quantum interference with a visibility of 94.8 +/- 0.5%; a controlled-NOT gate with an average logical basis fidelity of 94.3 +/- 0.2%; and a path-entangled state of two photons with fidelity of >92%. These results show that it is possible to directly "write" sophisticated photonic quantum circuits onto a silicon chip, which will be of benefit to future quantum technologies based on photons, including information processing, communication, metrology, and lithography, as well as the fundamental science of quantum optics.

Robust quantum control using smooth pulses and topological winding

NASA Astrophysics Data System (ADS)

Barnes, Edwin; Wang, Xin

2015-03-01

Perhaps the greatest challenge in achieving control of microscopic quantum systems is the decoherence induced by the environment, a problem which pervades experimental quantum physics and is particularly severe in the context of solid state quantum computing and nanoscale quantum devices because of the inherently strong coupling to the surrounding material. We present an analytical approach to constructing intrinsically robust driving fields which automatically cancel the leading-order noise-induced errors in a qubit's evolution exactly. We address two of the most common types of non-Markovian noise that arise in qubits: slow fluctuations of the qubit energy splitting and fluctuations in the driving field itself. We demonstrate our method by constructing robust quantum gates for several types of spin qubits, including phosphorous donors in silicon and nitrogen-vacancy centers in diamond. Our results constitute an important step toward achieving robust generic control of quantum systems, bringing their novel applications closer to realization. Work supported by LPS-CMTC.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

PubMed

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Predicting the valley physics of silicon quantum dots directly from a device layout

NASA Astrophysics Data System (ADS)

Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Bacewski, Andrew D.; Nielsen, Erik; Montaño, Inès; Rudolph, Martin; Carroll, Malcolm S.; Muller, Richard P.

Qubits made from electrostatically-defined quantum dots in Si-based systems are excellent candidates for quantum information processing applications. However, the multi-valley structure of silicon's band structure provides additional challenges for the few-electron physics critical to qubit manipulation. Here, we present a theory for valley physics that is predictive, in that we take as input the real physical device geometry and experimental voltage operation schedule, and with minimal approximation compute the resulting valley physics. We present both effective mass theory and atomistic tight-binding calculations for two distinct metal-oxide-semiconductor (MOS) quantum dot systems, directly comparing them to experimental measurements of the valley splitting. We conclude by assessing these detailed simulations' utility for engineering desired valley physics in future devices. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program.

Studies of silicon quantum dots prepared at different substrate temperatures

NASA Astrophysics Data System (ADS)

Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.

2017-03-01

In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.

A fabrication guide for planar silicon quantum dot heterostructures

NASA Astrophysics Data System (ADS)

Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

2018-04-01

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source.

PubMed

Steidle, Jeffrey A; Fanto, Michael L; Preble, Stefan F; Tison, Christopher C; Howland, Gregory A; Wang, Zihao; Alsing, Paul M

2017-04-04

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

Al transmon qubits on silicon-on-insulator for quantum device integration

NASA Astrophysics Data System (ADS)

Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

2017-07-01

We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

Witnessing eigenstates for quantum simulation of Hamiltonian spectra

PubMed Central

Santagati, Raffaele; Wang, Jianwei; Gentile, Antonio A.; Paesani, Stefano; Wiebe, Nathan; McClean, Jarrod R.; Morley-Short, Sam; Shadbolt, Peter J.; Bonneau, Damien; Silverstone, Joshua W.; Tew, David P.; Zhou, Xiaoqi; O’Brien, Jeremy L.; Thompson, Mark G.

2018-01-01

The efficient calculation of Hamiltonian spectra, a problem often intractable on classical machines, can find application in many fields, from physics to chemistry. We introduce the concept of an “eigenstate witness” and, through it, provide a new quantum approach that combines variational methods and phase estimation to approximate eigenvalues for both ground and excited states. This protocol is experimentally verified on a programmable silicon quantum photonic chip, a mass-manufacturable platform, which embeds entangled state generation, arbitrary controlled unitary operations, and projective measurements. Both ground and excited states are experimentally found with fidelities >99%, and their eigenvalues are estimated with 32 bits of precision. We also investigate and discuss the scalability of the approach and study its performance through numerical simulations of more complex Hamiltonians. This result shows promising progress toward quantum chemistry on quantum computers. PMID:29387796

Silicon quantum dots for energetic material applications

NASA Astrophysics Data System (ADS)

Adams, Sarah K.; Piekiel, Nicholas W.; Ervin, Matthew H.; Morris, Christopher J.

2018-06-01

In its history as an energetic material, porous silicon has demonstrated flame speeds in excess of 3 km s-1, tunable combustion behavior, and high energy output, which in theory makes it a very attractive energetic system. In practice, its application within the field is limited by porous silicon's typical substrate-adhered form and caustic chemical processing requirements that limit how and when porous silicon is made. In this work, we have relieved porous silicon of these constraints by creating reactive silicon quantum dots from free-standing porous silicon films. The resulting material is composed of crystalline silicon nanoparticles with diameters as small as 2 nm that retain the chemical properties of the original films including the SiH2 termination layer. The fabricated silicon particles were characterized using FTIR Spectroscopy, TEM, and EDS for determining the size and the chemical composition. For testing as an energetic material fuel, porous silicon was mixed with an oft used oxidizer, sodium perchlorate. During open-channel combustion tests, silicon quantum dots mixed with sodium perchlorate demonstrated flame speeds over 2.5 km s-1, while bomb calorimetry tests showed an average heat of combustion of 7.4 kJ g-1. These results demonstrate the ability to retain the porous silicon material properties that allow for highly energetic material reactions to occur, despite the additional processing steps to create silicon quantum dots. This opens the door for the use of porous silicon in the bulk of the energetic material application space, much of which was previously limited due to the substrate-attached nature of typical porous silicon.

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

NASA Astrophysics Data System (ADS)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

NASA Astrophysics Data System (ADS)

Pala, M. G.; Esseni, D.

2018-03-01

This paper presents the theory, implementation, and application of a quantum transport modeling approach based on the nonequilibrium Green's function formalism and a full-band empirical pseudopotential Hamiltonian. We here propose to employ a hybrid real-space/plane-wave basis that results in a significant reduction of the computational complexity compared to a full plane-wave basis. To this purpose, we provide a theoretical formulation in the hybrid basis of the quantum confinement, the self-energies of the leads, and the coupling between the device and the leads. After discussing the theory and the implementation of the new simulation methodology, we report results for complete, self-consistent simulations of different electron devices, including a silicon Esaki diode, a thin-body silicon field effect transistor (FET), and a germanium tunnel FET. The simulated transistors have technologically relevant geometrical features with a semiconductor film thickness of about 4 nm and a channel length ranging from 10 to 17 nm. We believe that the newly proposed formalism may find applications also in transport models based on ab initio Hamiltonians, as those employed in density functional theory methods.

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Quantum transport modelling of silicon nanobeams using heterogeneous computing scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harb, M., E-mail: harbm@physics.mcgill.ca; Michaud-Rioux, V., E-mail: vincentm@physics.mcgill.ca; Guo, H., E-mail: guo@physics.mcgill.ca

We report the development of a powerful method for quantum transport calculations of nanowire/nanobeam structures with large cross sectional area. Our approach to quantum transport is based on Green's functions and tight-binding potentials. A linear algebraic formulation allows us to harness the massively parallel nature of Graphics Processing Units (GPUs) and our implementation is based on a heterogeneous parallel computing scheme with traditional processors and GPUs working together. Using our software tool, the electronic and quantum transport properties of silicon nanobeams with a realistic cross sectional area of ∼22.7 nm{sup 2} and a length of ∼81.5 nm—comprising 105 000 Si atoms and 24 000more » passivating H atoms in the scattering region—are investigated. The method also allows us to perform significant averaging over impurity configurations—all possible configurations were considered in the case of single impurities. Finally, the effect of the position and number of vacancy defects on the transport properties was considered. It is found that the configurations with the vacancies lying closer to the local density of states (LDOS) maxima have lower transmission functions than the configurations with the vacancies located at LDOS minima or far away from LDOS maxima, suggesting both a qualitative method to tune or estimate optimal impurity configurations as well as a physical picture that accounts for device variability. Finally, we provide performance benchmarks for structures as large as ∼42.5 nm{sup 2} cross section and ∼81.5 nm length.« less

Energy and Information Transfer Via Coherent Exciton Wave Packets

NASA Astrophysics Data System (ADS)

Zang, Xiaoning

Electronic excitons are bound electron-hole states that are generated when light interacts with matter. Such excitations typically entangle with phonons and rapidly decohere; the resulting electronic state dynamics become diffusive as a result. However, if the exciton-phonon coupling can be reduced, it may be possible to construct excitonic wave packets that offer a means of efficiently transmitting information and energy. This thesis is a combined theory/computation investigation to design condensed matter systems which support the requisite coherent transport. Under the idealizing assumption that exciton-phonon entanglement could be completely suppressed, the majority of this thesis focuses on the creation and manipulation of exciton wave packets in quasi-one-dimensional systems. While each site could be a silicon quantum dot, the actual implementation focused on organic molecular assemblies for the sake of computational simplicity, ease of experimental implementation, potential for coherent transport, and promise because of reduced structural uncertainty. A laser design was derived to create exciton wave packets with tunable shape and speed. Quantum interference was then exploited to manipulate these packets to block, pass, and even dissociate excitons based on their energies. These developments allow exciton packets to be considered within the arena of quantum information science. The concept of controllable excitonic wave packets was subsequently extended to consider molecular designs that allow photons with orbital angular momentum to be absorbed to create excitons with a quasi-angular momentum of their own. It was shown that a well-defined measure of topological charge is conserved in such light-matter interactions. Significantly, it was also discovered that such molecules allow photon angular momenta to be combined and later emitted. This amounts to a new way of up/down converting photonic angular momentum without relying on nonlinear optical materials. The associated excitations were dubbed twisted excitons. Twisted exciton packets can be manipulated as they travel down molecular chains, and this has applications in quantum information science as well. In each setting considered, exciton dynamics were initially studied using a simple tight-binding formalism. This misses the actual many-body interactions and multiple energy levels associated real systems. To remedy this, I adapted an existing time-domain Density Functional Theory code and applied it to study the dynamics of exciton wave packets on quasi-one-dimensional systems. This required the use of high-performance computing and the construction of a number of key auxiliary codes. Establishing the requisite methodology constituted a substantial part of the entire thesis. Surprisingly, this effort uncovered a computational issue associated with Rabi oscillations that had been incorrectly characterized in the literature. My research elucidated the actual problem and a solution was found. This new methodology was an integral part of the overall computational analysis. The thesis then takes up the a detailed consideration of the prospect for creating systems that support a strong measure of transport coherence. While physical implementations include molecular assemblies, solid-state superlattices, and even optical lattices, I decided to focus on assemblies of nanometer-sized silicon quantum dots. First principles computational analysis was used to quantify reorganization within individual dots and excitonic coupling between dots. Quantum dot functionalizations were identified that make it plausible to maintain a measure of excitonic coherence even at room temperatures. Attention was then turned to the use of covalently bonded bridge material to join quantum dots in a way that facilitates efficient exciton transfer. Both carbon and silicon structures were considered by considering the way in which subunits might be best brought together. This resulted in a set of design criteria which were then evaluated using first-principles, excited state analyses. It was found that efficient exciton transfer is indeed possible. When coupled to the previous quantum dot functionalizations, the notion that quantum dot materials could support partially coherent exciton wave packets was determined to be quite reasonable.

Electrical and mechanical tuning of a silicon vacancy defect in SiC for quantum information technology

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We develop coherent control via Stark effect over the optical transition energies of silicon monovacancy deep center in hexagonal silicon carbide. We show that this defect's unique asymmetry properties of its piezoelectric tensor and Kramer's degenerate high-spin ground/excited state configurations can be used to create new possibilities in quantum information technology ranging from photonic networks to quantum key distribution. We also give examples of its qubit implementations via precise electric field control. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

Vacuum Gap Microstrip Microwave Resonators for 2.5-D Integration in Quantum Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewis, Rupert M.; Henry, Michael David; Schroeder, Katlin

We demonstrate vacuum gap λ/2 microwave resonators as a route toward higher integration in superconducting qubit circuits. The resonators are fabricated from pieces on two silicon chips bonded together with an In-Sb bond. Measurements of the devices yield resonant frequencies in good agreement with simulations. Furthermore, we discuss creating low loss circuits in this geometry.

Vacuum Gap Microstrip Microwave Resonators for 2.5-D Integration in Quantum Computing

DOE PAGES

Lewis, Rupert M.; Henry, Michael David; Schroeder, Katlin

2017-02-22

We demonstrate vacuum gap λ/2 microwave resonators as a route toward higher integration in superconducting qubit circuits. The resonators are fabricated from pieces on two silicon chips bonded together with an In-Sb bond. Measurements of the devices yield resonant frequencies in good agreement with simulations. Furthermore, we discuss creating low loss circuits in this geometry.

Mid-infrared coincidence measurements on twin photons at room temperature

PubMed Central

Mancinelli, M.; Trenti, A.; Piccione, S.; Fontana, G.; Dam, J. S.; Tidemand-Lichtenberg, P.; Pedersen, C.; Pavesi, L.

2017-01-01

Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons. In the visible and near infrared wavelength ranges suitable single-photon detectors do exist. However, low detector quantum efficiency or excessive noise has hampered their mid-infrared (MIR) counterpart. Fast and highly efficient single-photon detectors are thus highly sought after for MIR applications. Here we pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 μm. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules. The up-converted pairs are then detected with low-noise silicon avalanche photodiodes without the need for cryogenic cooling. PMID:28504244

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

NASA Astrophysics Data System (ADS)

Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

2018-03-01

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Diamond photonics for distributed quantum networks

NASA Astrophysics Data System (ADS)

Johnson, Sam; Dolan, Philip R.; Smith, Jason M.

2017-09-01

The distributed quantum network, in which nodes comprising small but well-controlled quantum states are entangled via photonic channels, has in recent years emerged as a strategy for delivering a range of quantum technologies including secure communications, enhanced sensing and scalable quantum computing. Colour centres in diamond are amongst the most promising candidates for nodes fabricated in the solid-state, offering potential for large scale production and for chip-scale integrated devices. In this review we consider the progress made and the remaining challenges in developing diamond-based nodes for quantum networks. We focus on the nitrogen-vacancy and silicon-vacancy colour centres, which have demonstrated many of the necessary attributes for these applications. We focus in particular on the use of waveguides and other photonic microstructures for increasing the efficiency with which photons emitted from these colour centres can be coupled into a network, and the use of microcavities for increasing the fraction of photons emitted that are suitable for generating entanglement between nodes.

Computational modeling and analysis of thermoelectric properties of nanoporous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H.; Yu, Y.; Li, G., E-mail: gli@clemson.edu

2014-03-28

In this paper, thermoelectric properties of nanoporous silicon are modeled and studied by using a computational approach. The computational approach combines a quantum non-equilibrium Green's function (NEGF) coupled with the Poisson equation for electrical transport analysis, a phonon Boltzmann transport equation (BTE) for phonon thermal transport analysis and the Wiedemann-Franz law for calculating the electronic thermal conductivity. By solving the NEGF/Poisson equations self-consistently using a finite difference method, the electrical conductivity σ and Seebeck coefficient S of the material are numerically computed. The BTE is solved by using a finite volume method to obtain the phonon thermal conductivity k{sub p}more » and the Wiedemann-Franz law is used to obtain the electronic thermal conductivity k{sub e}. The figure of merit of nanoporous silicon is calculated by ZT=S{sup 2}σT/(k{sub p}+k{sub e}). The effects of doping density, porosity, temperature, and nanopore size on thermoelectric properties of nanoporous silicon are investigated. It is confirmed that nanoporous silicon has significantly higher thermoelectric energy conversion efficiency than its nonporous counterpart. Specifically, this study shows that, with a n-type doping density of 10{sup 20} cm{sup –3}, a porosity of 36% and nanopore size of 3 nm × 3 nm, the figure of merit ZT can reach 0.32 at 600 K. The results also show that the degradation of electrical conductivity of nanoporous Si due to the inclusion of nanopores is compensated by the large reduction in the phonon thermal conductivity and increase of absolute value of the Seebeck coefficient, resulting in a significantly improved ZT.« less

Small Scale Burner Review

DTIC Science & Technology

2009-07-01

dopants in the semiconductor components of the devices (5). Venkatasubramanian (46) reviewed some state- of-the-art TE materials such as quantum-dot...conversion efficiency of a GaSb micro TPV system incorporating broadband silicon carbide (SiC) and selective emitted materials ( cobalt [Co]/nickel...carbon CFD computational fluid dynamics Co cobalt CO carbon monoxide CO2 carbon dioxide Cu copper GaSb gallium antimonide InGaAs indium gallium

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Valley dependent g-factor anisotropy in Silicon quantum dots

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Kawakami, Erika; Scarlino, Pasquale; Nowak, Michal; Klimeck, Gerhard; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.; Vandersypen, Lieven M. K.; Rahman, Rajib

Silicon (Si) quantum dots (QD) provide a promising platform for a spin based quantum computer, because of the exceptionally long spin coherence times in Si and the existing industrial infrastructure. Due to the presence of an interface and a vertical electric field, the two lowest energy states of a Si QD are primarily composed of two conduction band valleys. Confinement by the interface and the E-field not only affect the charge properties of these states, but also their spin properties through the spin-orbit interaction (SO), which differs significantly from the SO in bulk Si. Recent experiments have found that the g-factors of these states are different and dependent on the direction of the B-field. Using an atomistic tight-binding model, we investigate the electric and magnetic field dependence of the electron g-factor of the valley states in a Si QD. We find that the g-factors are valley dependent and show 180-degree periodicity as a function of an in-plane magnetic field orientation. However, atomic scale roughness can strongly affect the anisotropic g-factors. Our study helps to reconcile disparate experimental observations and to achieve better external control over electron spins in Si QD, by electric and magnetic fields.

X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

NASA Astrophysics Data System (ADS)

Takahashi, Hiroshi; Hashizume, Tamotsu; Hasegawa, Hideki

1999-02-01

In order to understand and optimize a novel oxide-free InP passivation process using a silicon surface quantum well, a detailed in situ X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance-voltage (C-V) study of the interface was carried out. Calculation of quantum levels in the silicon quantum well was performed on the basis of the band lineup of the strained Si3N4/Si/InP interface and the result indicated that the interface should become free of gap states when the silicon layer thickness is below 5 Å. Experimentally, such a delicate Si3N4/Si/InP structure was realized by partial nitridation of a molecular beam epitaxially (MBE) grown pseudomorphic silicon layer using an electron cyclotron resonance (ECR) N2 plasma. The progress of nitridation was investigated in detail by angle-resolved XPS. A newly developed UHV contactless C-V method realized in situ characterization of surface electronic properties of InP at each processing step for passivation. It was found that the interface state density decreased substantially into the 1010 cm-2 eV-1 range by optimizing the nitridation process of the silicon layer. It was concluded that both the surface bond termination and state removal by quantum confinement are responsible for the NSS reduction.

Biocompatible magnetofluorescent probes: luminescent silicon quantum dots coupled with superparamagnetic iron(III) oxide.

PubMed

Erogbogbo, Folarin; Yong, Ken-Tye; Hu, Rui; Law, Wing-Cheung; Ding, Hong; Chang, Ching-Wen; Prasad, Paras N; Swihart, Mark T

2010-09-28

Luminescent silicon quantum dots (SiQDs) are gaining momentum in bioimaging applications, based on their unique combination of optical properties and biocompatibility. Here, we report the development of a multimodal probe that combines the optical properties of silicon quantum dots with the superparamagnetic properties of iron oxide nanoparticles to create biocompatible magnetofluorescent nanoprobes. Multiple nanoparticles of each type are coencapsulated within the hydrophobic core of biocompatible phospholipid-polyethyleneglycol (DSPE-PEG) micelles. The size distribution and composition of the magnetofluorescent nanoprobes were characterized by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). Enhanced cellular uptake of these probes in the presence of a magnetic field was demonstrated in vitro. Their luminescence stability in a prostate cancer tumor model microenvironment was demonstrated in vivo. This paves the way for multimodal silicon quantum-dot-based nanoplatforms for a variety of imaging and delivery applications.

Surface Magnetism on pristine silicon thin film for spin and valley transport

NASA Astrophysics Data System (ADS)

Sun, Jia-Tao

The spin and valley degree of freedom for an electron have received tremendous attention in condensed matters physics because of the potential application for spintronics and valleytronics. It has been widely accepted that d0 light elemental materials of single component are not taken as ferromagnetic candidates because of the absence of odd paired electrons. The ferromagnetism has to be introduced by ferromagnetic impurity, edge functionalization, or proximity with ferromagnetic neighbors etc. These special surface or interface structures require atomically precise control which significantly increases experimental uncertainty and theoretical understanding. By means of density functional theory (DFT) computations, we found that the spin- and valley- polarized state can be introduced in pristine silicon thin films without any alien components. The key point to this aim is the formation of graphene-like hexagonal structures making a spin-polarized Dirac fermion with half-filling. The resulting fundamental physics such as quantum valley Hall effect (QVHE), quantum anomalous Hall effect (QAHE) and magnetoelectric effect will be discussed.

Luminescence and related properties of nanocrystalline porous silicon

NASA Astrophysics Data System (ADS)

Koshida, N.

This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.

QCAD simulation and optimization of semiconductor double quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina

2013-12-01

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltagesmore » in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design comparison and optimization.« less

Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

Progress in post-quantum mechanics

NASA Astrophysics Data System (ADS)

Sarfatti, Jack

2017-05-01

Newton's mechanics in the 17th century increased the lethality of artillery. Thermodynamics in the 19th led to the steam-powered industrial revolution. Maxwell's unification of electricity, magnetism and light gave us electrical power, the telegraph, radio and television. The discovery of quantum mechanics in the 20th century by Planck, Bohr, Einstein, Schrodinger, Heisenberg led to the creation of the atomic and hydrogen bombs as well as computer chips, the world-wide-web and Silicon Valley's multibillion dollar corporations. The lesson is that breakthroughs in fundamental physics, both theoretical and experimental, have always led to profound technological wealth-creating industries and will continue to do so. There is now a new revolution brewing in quantum mechanics that can be divided into three periods. The first quantum revolution was from 1900 to about 1975. The second quantum information/computer revolution was from about 1975 to 2015. (The early part of this story is told by Kaiser in his book, How the Hippies Saved Physics, how a small group of Berkeley/San Francisco physicists triggered that second revolution.) The third quantum revolution is how an extension of quantum mechanics may lead to the understanding of consciousness as a natural physical phenomenon that can emerge in many material substrates, not only in our carbon-based biochemistry. In particular, this new post-quantum mechanics may lead to naturally conscious artificial intelligence in nano-electronic machines, as well as perhaps extending human life spans to hundreds of years and more.

Experimental Bayesian Quantum Phase Estimation on a Silicon Photonic Chip.

PubMed

Paesani, S; Gentile, A A; Santagati, R; Wang, J; Wiebe, N; Tew, D P; O'Brien, J L; Thompson, M G

2017-03-10

Quantum phase estimation is a fundamental subroutine in many quantum algorithms, including Shor's factorization algorithm and quantum simulation. However, so far results have cast doubt on its practicability for near-term, nonfault tolerant, quantum devices. Here we report experimental results demonstrating that this intuition need not be true. We implement a recently proposed adaptive Bayesian approach to quantum phase estimation and use it to simulate molecular energies on a silicon quantum photonic device. The approach is verified to be well suited for prethreshold quantum processors by investigating its superior robustness to noise and decoherence compared to the iterative phase estimation algorithm. This shows a promising route to unlock the power of quantum phase estimation much sooner than previously believed.

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

Single Spin Readout for the Silicon-Based Quantum Computer

DTIC Science & Technology

2007-01-03

cantilever unlike softer magnetic materi- als such as Co and NiFe . Therefore fabrication of high coercivity magnets are different from the techniques...not suitable for batch fabrication. However the advanta- geous physical properties of the resulting probe magnet outweigh the ease of fabrication of...studying the magnetic properties of these tiny moment micromagnets as a prerequisite to their successful development. We have developed a sen- sitive

Predicting Hydride Donor Strength via Quantum Chemical Calculations of Hydride Transfer Activation Free Energy.

PubMed

Alherz, Abdulaziz; Lim, Chern-Hooi; Hynes, James T; Musgrave, Charles B

2018-01-25

We propose a method to approximate the kinetic properties of hydride donor species by relating the nucleophilicity (N) of a hydride to the activation free energy ΔG ⧧ of its corresponding hydride transfer reaction. N is a kinetic parameter related to the hydride transfer rate constant that quantifies a nucleophilic hydridic species' tendency to donate. Our method estimates N using quantum chemical calculations to compute ΔG ⧧ for hydride transfers from hydride donors to CO 2 in solution. A linear correlation for each class of hydrides is then established between experimentally determined N values and the computationally predicted ΔG ⧧ ; this relationship can then be used to predict nucleophilicity for different hydride donors within each class. This approach is employed to determine N for four different classes of hydride donors: two organic (carbon-based and benzimidazole-based) and two inorganic (boron and silicon) hydride classes. We argue that silicon and boron hydrides are driven by the formation of the more stable Si-O or B-O bond. In contrast, the carbon-based hydrides considered herein are driven by the stability acquired upon rearomatization, a feature making these species of particular interest, because they both exhibit catalytic behavior and can be recycled.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

PubMed Central

Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos

2018-01-01

Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267

Fabrication of Circuit QED Quantum Processors, Part 1: Extensible Footprint for a Superconducting Surface Code

NASA Astrophysics Data System (ADS)

Bruno, A.; Michalak, D. J.; Poletto, S.; Clarke, J. S.; Dicarlo, L.

Large-scale quantum computation hinges on the ability to preserve and process quantum information with higher fidelity by increasing redundancy in a quantum error correction code. We present the realization of a scalable footprint for superconducting surface code based on planar circuit QED. We developed a tileable unit cell for surface code with all I/O routed vertically by means of superconducting through-silicon vias (TSVs). We address some of the challenges encountered during the fabrication and assembly of these chips, such as the quality of etch of the TSV, the uniformity of the ALD TiN coating conformal to the TSV, and the reliability of superconducting indium contact between the chips and PCB. We compare measured performance to a detailed list of specifications required for the realization of quantum fault tolerance. Our demonstration using centimeter-scale chips can accommodate the 50 qubits needed to target the experimental demonstration of small-distance logical qubits. Research funded by Intel Corporation and IARPA.

Fundamental device design considerations in the development of disruptive nanoelectronics.

PubMed

Singh, R; Poole, J O; Poole, K F; Vaidya, S D

2002-01-01

In the last quarter of a century silicon-based integrated circuits (ICs) have played a major role in the growth of the economy throughout the world. A number of new technologies, such as quantum computing, molecular computing, DNA molecules for computing, etc., are currently being explored to create a product to replace semiconductor transistor technology. We have examined all of the currently explored options and found that none of these options are suitable as silicon IC's replacements. In this paper we provide fundamental device criteria that must be satisfied for the successful operation of a manufacturable, not yet invented, device. The two fundamental limits are the removal of heat and reliability. The switching speed of any practical man-made computing device will be in the range of 10(-15) to 10(-3) s. Heisenberg's uncertainty principle and the computer architecture set the heat generation limit. The thermal conductivity of the materials used in the fabrication of a nanodimensional device sets the heat removal limit. In current electronic products, redundancy plays a significant part in improving the reliability of parts with macroscopic defects. In the future, microscopic and even nanoscopic defects will play a critical role in the reliability of disruptive nanoelectronics. The lattice vibrations will set the intrinsic reliability of future computing systems. The two critical limits discussed in this paper provide criteria for the selection of materials used in the fabrication of future devices. Our work shows that diamond contains the clue to providing computing devices that will surpass the performance of silicon-based nanoelectronics.

The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.

PubMed

Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

2015-12-22

Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs. © 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon

DTIC Science & Technology

1994-04-01

matrix elements, quantum confinement, surface effects ? CHARLOTFE STANDARD R. Tsu Comparison of Luminescence Efficiency ROLE OF NANOSCALE Si-DEVICES...confinement effects in microcrystalline silicon [2,3] may lead to revolutionary advances in speed and dramatically reduced energy consumption of silicon...Formation: A Quantum Wire Effect ," Avpl. Phys. Lett., 58, 856 (1991). 5. R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and Photoluminescence

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Ensemble brightening and enhanced quantum yield in size-purified silicon nanocrystals

DOE PAGES

Miller, Joseph B.; Van Sickle, Austin R.; Anthony, Rebecca J.; ...

2012-07-18

Here, we report on the quantum yield, photoluminescence (PL) lifetime and ensemble photoluminescent stability of highly monodisperse plasma-synthesized silicon nanocrystals (SiNCs) prepared though density-gradient ultracentrifugation in mixed organic solvents. Improved size uniformity leads to a reduction in PL line width and the emergence of entropic order in dry nanocrystal films. We find excellent agreement with the anticipated trends of quantum confinement in nanocrystalline silicon, with a solution quantum yield that is independent of nanocrystal size for the larger fractions but decreases dramatically with size for the smaller fractions. We also find a significant PL enhancement in films assembled from themore » fractions, and we use a combination of measurement, simulation and modeling to link this ‘brightening’ to a temporally enhanced quantum yield arising from SiNC interactions in ordered ensembles of monodisperse nanocrystals. Using an appropriate excitation scheme, we exploit this enhancement to achieve photostable emission.« less

Quantum electromechanics on silicon nitride nanomembranes

PubMed Central

Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

2016-01-01

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

Quantum electromechanics on silicon nitride nanomembranes.

PubMed

Fink, J M; Kalaee, M; Pitanti, A; Norte, R; Heinzle, L; Davanço, M; Srinivasan, K; Painter, O

2016-08-03

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom-mechanical, optical and microwave-would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Plasmonic engineering of spontaneous emission from silicon nanocrystals.

PubMed

Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

2013-01-01

Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

PubMed

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Atomically manufactured nickel-silicon quantum dots displaying robust resonant tunneling and negative differential resistance

NASA Astrophysics Data System (ADS)

Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.

2017-12-01

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.

Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

DOE PAGES

Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.; ...

2017-05-22

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less

Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less

Spin coherence in silicon/silicon-germanium nanostructures

NASA Astrophysics Data System (ADS)

Truitt, James L.

This thesis investigates the spin coherence of electrons in silicon/silicon-germanium (Si/SiGe) quantum wells. With a long spin coherence time, an electron trapped in a quantum dot in Si/SiGe is a prime candidate for a quantum bit (qubit) in a solid state implementation of a quantum computer. In particular, the mechanisms responsible for decoherence are examined in a variety of Si/SiGe quantum wells, and it is seen that their behavior does not correspond to published theories of decoherence in these structures. Transport data are analyzed for all samples to determine the electrical properties of each, taking into account a parallel conduction path seen in all samples. Furthermore, the effect of confining the electrons into nanostructures of varying size in one of the samples is studied. All but one of the samples examined are grown by ultrahigh vacuum chemical vapor deposition at the University of Wisconsin - Madison. The nanostructures are patterned on a sample provided by IBM using the Nabity Pattern Generation Software (NPGS) on a LEO1530 Scanning Electron Microscope, and etched using SF6 in an STS reactive ion etcher. Continuous-wave electron spin resonance studies are done using a Bruker ESP300E spectrometer, with a 4.2K continuous flow cryostat and X-band cavity. In order to fully characterize the sample, electrical measurements were done. Hall bars are etched into the 2DEGs, and Ohmic contacts are annealed in to provide a current path through the 2DEG. Measurements are made both from room temperature down to 2K in a Physical Property Measurement System (PPMS), and at 300mK using a custom built probe in a one shot 3He cryostat made by Oxford Instruments. The custom built probe also allows high frequency excitations, facilitating electrically detected magnetic resonance (EDMR) experiments. In many of the samples, an orientationally dependent electron spin resonance linewidth is seen whose anisotropy is much larger at small angles than that predicted by published theories. The anisotropy is further increased through lateral confinement of the electrons, and a change in the coherence and relaxation times may be seen as a function of dot size as well. Finally, an outlook on the direction the lab is taking from 2DEGs to dots with electron spin resonance is given, with some promising electrically detected magnetic resonance results shown.

Nondestructive imaging of atomically thin nanostructures buried in silicon

PubMed Central

Gramse, Georg; Kölker, Alexander; Lim, Tingbin; Stock, Taylor J. Z.; Solanki, Hari; Schofield, Steven R.; Brinciotti, Enrico; Aeppli, Gabriel; Kienberger, Ferry; Curson, Neil J.

2017-01-01

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers. PMID:28782006

Collaborative Simulation Grid: Multiscale Quantum-Mechanical/Classical Atomistic Simulations on Distributed PC Clusters in the US and Japan

NASA Technical Reports Server (NTRS)

Kikuchi, Hideaki; Kalia, Rajiv; Nakano, Aiichiro; Vashishta, Priya; Iyetomi, Hiroshi; Ogata, Shuji; Kouno, Takahisa; Shimojo, Fuyuki; Tsuruta, Kanji; Saini, Subhash;

Nanoelectronics: Opportunities for future space applications

NASA Technical Reports Server (NTRS)

Frazier, Gary

1995-01-01

Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.

Quantum engineering of transistors based on 2D materials heterostructures

NASA Astrophysics Data System (ADS)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Quantum engineering of transistors based on 2D materials heterostructures.

PubMed

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R. G.

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31P ions.

Isolating and moving single atoms using silicon nanocrystals

DOEpatents

Carroll, Malcolm S.

2010-09-07

A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law.

PubMed

Li, Qi; Luo, Tian-Yi; Zhou, Meng; Abroshan, Hadi; Huang, Jingchun; Kim, Hyung J; Rosi, Nathaniel L; Shao, Zhengzhong; Jin, Rongchao

2016-09-27

Silicon nanoparticles (NPs) have been widely accepted as an alternative material for typical quantum dots and commercial organic dyes in light-emitting and bioimaging applications owing to silicon's intrinsic merits of least toxicity, low cost, and high abundance. However, to date, how to improve Si nanoparticle photoluminescence (PL) performance (such as ultrahigh quantum yield, sharp emission peak, high stability) is still a major issue. Herein, we report surface nitrogen-capped Si NPs with PL quantum yield up to 90% and narrow PL bandwidth (full width at half-maximum (fwhm) ≈ 40 nm), which can compete with commercial dyes and typical quantum dots. Comprehensive studies have been conducted to unveil the influence of particle size, structure, and amount of surface ligand on the PL of Si NPs. Especially, a general ligand-structure-based PL energy law for surface nitrogen-capped Si NPs is identified in both experimental and theoretical analyses, and the underlying PL mechanisms are further discussed.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

PubMed

Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

2013-11-15

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

Silicon nanoparticles: applications in cell biology and medicine

PubMed Central

O’Farrell, Norah; Houlton, Andrew; Horrocks, Benjamin R

2006-01-01

In this review, we describe the synthesis, physical properties, surface functionalization, and biological applications of silicon nanoparticles (also known as quantum dots). We compare them against current technologies, such as fluorescent organic dyes and heavy metal chalcogenide-based quantum dots. In particular, we examine the many different methods that can be used to both create and modify these nanoparticles and the advantages they may have over current technologies that have stimulated research into designing silicon nanoparticles for in vitro and in vivo applications. PMID:17722279

Telecom-band degenerate-frequency photon pair generation in silicon microring cavities.

PubMed

Guo, Yuan; Zhang, Wei; Dong, Shuai; Huang, Yidong; Peng, Jiangde

2014-04-15

In this Letter, telecom-band degenerate-frequency photon pairs are generated in a specific mode of a silicon microring cavity by the nondegenerate spontaneous four-wave mixing (SFWM) process, under two continuous-wave pumps at resonance wavelength of two different cavity modes. The ratio of coincidence to accidental coincidence is up to 100 under a time bin width of 5 ns, showing their characteristics of quantum correlation. Their quantum interference in balanced and unbalanced Mach-Zehnder interferometers is investigated theoretically and experimentally, and the results show potential in quantum metrology and quantum information.

Photovoltage field-effect transistors

NASA Astrophysics Data System (ADS)

Adinolfi, Valerio; Sargent, Edward H.

2017-02-01

The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III-V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides

NASA Astrophysics Data System (ADS)

Lemonde, M.-A.; Meesala, S.; Sipahigil, A.; Schuetz, M. J. A.; Lukin, M. D.; Loncar, M.; Rabl, P.

2018-05-01

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides.

PubMed

Lemonde, M-A; Meesala, S; Sipahigil, A; Schuetz, M J A; Lukin, M D; Loncar, M; Rabl, P

2018-05-25

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Nanodiamonds carrying silicon-vacancy quantum emitters with almost lifetime-limited linewidths

NASA Astrophysics Data System (ADS)

Jantzen, Uwe; Kurz, Andrea B.; Rudnicki, Daniel S.; Schäfermeier, Clemens; Jahnke, Kay D.; Andersen, Ulrik L.; Davydov, Valery A.; Agafonov, Viatcheslav N.; Kubanek, Alexander; Rogers, Lachlan J.; Jelezko, Fedor

2016-07-01

Colour centres in nanodiamonds are an important resource for applications in quantum sensing, biological imaging, and quantum optics. Here we report unprecedented narrow optical transitions for individual colour centres in nanodiamonds smaller than 200 nm. This demonstration has been achieved using the negatively charged silicon vacancy centre, which has recently received considerable attention due to its superb optical properties in bulk diamond. We have measured an ensemble of silicon-vacancy centres across numerous nanodiamonds to have an inhomogeneous distribution of 1.05 nm at 5 K. Individual spectral lines as narrower than 360 MHz were measured in photoluminescence excitation, and correcting for apparent spectral diffusion yielded an homogeneous linewidth of about 200 MHz which is close to the lifetime limit. These results indicate the high crystalline quality achieved in these nanodiamond samples, and advance the applicability of nanodiamond-hosted colour centres for quantum optics applications.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

Integrated spatial multiplexing of heralded single-photon sources

PubMed Central

Collins, M.J.; Xiong, C.; Rey, I.H.; Vo, T.D.; He, J.; Shahnia, S.; Reardon, C.; Krauss, T.F.; Steel, M.J.; Clark, A.S.; Eggleton, B.J.

2013-01-01

The non-deterministic nature of photon sources is a key limitation for single-photon quantum processors. Spatial multiplexing overcomes this by enhancing the heralded single-photon yield without enhancing the output noise. Here the intrinsic statistical limit of an individual source is surpassed by spatially multiplexing two monolithic silicon-based correlated photon pair sources in the telecommunications band, demonstrating a 62.4% increase in the heralded single-photon output without an increase in unwanted multipair generation. We further demonstrate the scalability of this scheme by multiplexing photons generated in two waveguides pumped via an integrated coupler with a 63.1% increase in the heralded photon rate. This demonstration paves the way for a scalable architecture for multiplexing many photon sources in a compact integrated platform and achieving efficient two-photon interference, required at the core of optical quantum computing and quantum communication protocols. PMID:24107840

Multi-photon absorption limits to heralded single photon sources

PubMed Central

Husko, Chad A.; Clark, Alex S.; Collins, Matthew J.; De Rossi, Alfredo; Combrié, Sylvain; Lehoucq, Gaëlle; Rey, Isabella H.; Krauss, Thomas F.; Xiong, Chunle; Eggleton, Benjamin J.

2013-01-01

Single photons are of paramount importance to future quantum technologies, including quantum communication and computation. Nonlinear photonic devices using parametric processes offer a straightforward route to generating photons, however additional nonlinear processes may come into play and interfere with these sources. Here we analyse spontaneous four-wave mixing (SFWM) sources in the presence of multi-photon processes. We conduct experiments in silicon and gallium indium phosphide photonic crystal waveguides which display inherently different nonlinear absorption processes, namely two-photon (TPA) and three-photon absorption (ThPA), respectively. We develop a novel model capturing these diverse effects which is in excellent quantitative agreement with measurements of brightness, coincidence-to-accidental ratio (CAR) and second-order correlation function g(2)(0), showing that TPA imposes an intrinsic limit on heralded single photon sources. We build on these observations to devise a new metric, the quantum utility (QMU), enabling further optimisation of single photon sources. PMID:24186400

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohiyaddin, Fahd A.; Kalra, Rachpon; Laucht, Arne

The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental nonidealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO 2 interface. We then estimate the required time scales and exchange couplings, and themore » level of noise that can be tolerated to achieve high-fidelity transport. As a result, we also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport.« less

Transport of spin qubits with donor chains under realistic experimental conditions

NASA Astrophysics Data System (ADS)

Mohiyaddin, Fahd A.; Kalra, Rachpon; Laucht, Arne; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2016-07-01

The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental nonidealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO2 interface. We then estimate the required time scales and exchange couplings, and the level of noise that can be tolerated to achieve high-fidelity transport. We also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport.

Transport of spin qubits with donor chains under realistic experimental conditions

DOE PAGES

Mohiyaddin, Fahd A.; Kalra, Rachpon; Laucht, Arne; ...

2016-07-25

The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental nonidealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO 2 interface. We then estimate the required time scales and exchange couplings, and themore » level of noise that can be tolerated to achieve high-fidelity transport. As a result, we also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport.« less

The future of computing--new architectures and new technologies.

PubMed

Warren, P

2004-02-01

All modern computers are designed using the 'von Neumann' architecture and built using silicon transistor technology. Both architecture and technology have been remarkably successful. Yet there are a range of problems for which this conventional architecture is not particularly well adapted, and new architectures are being proposed to solve these problems, in particular based on insight from nature. Transistor technology has enjoyed 50 years of continuing progress. However, the laws of physics dictate that within a relatively short time period this progress will come to an end. New technologies, based on molecular and biological sciences as well as quantum physics, are vying to replace silicon, or at least coexist with it and extend its capability. The paper describes these novel architectures and technologies, places them in the context of the kinds of problems they might help to solve, and predicts their possible manner and time of adoption. Finally it describes some key questions and research problems associated with their use.

Freestanding silicon quantum dots: origin of red and blue luminescence.

PubMed

Gupta, Anoop; Wiggers, Hartmut

2011-02-04

In this paper, we studied the behavior of silicon quantum dots (Si-QDs) after etching and surface oxidation by means of photoluminescence (PL) measurements, Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance spectroscopy (EPR). We observed that etching of red luminescing Si-QDs with HF acid drastically reduces the concentration of defects and significantly enhances their PL intensity together with a small shift in the emission spectrum. Additionally, we observed the emergence of blue luminescence from Si-QDs during the re-oxidation of freshly etched particles. Our results indicate that the red emission is related to the quantum confinement effect, while the blue emission from Si-QDs is related to defect states at the newly formed silicon oxide surface.

Enhancing coherence in molecular spin qubits via atomic clock transitions

NASA Astrophysics Data System (ADS)

Shiddiq, Muhandis; Komijani, Dorsa; Duan, Yan; Gaita-Ariño, Alejandro; Coronado, Eugenio; Hill, Stephen

2016-03-01

Quantum computing is an emerging area within the information sciences revolving around the concept of quantum bits (qubits). A major obstacle is the extreme fragility of these qubits due to interactions with their environment that destroy their quantumness. This phenomenon, known as decoherence, is of fundamental interest. There are many competing candidates for qubits, including superconducting circuits, quantum optical cavities, ultracold atoms and spin qubits, and each has its strengths and weaknesses. When dealing with spin qubits, the strongest source of decoherence is the magnetic dipolar interaction. To minimize it, spins are typically diluted in a diamagnetic matrix. For example, this dilution can be taken to the extreme of a single phosphorus atom in silicon, whereas in molecular matrices a typical ratio is one magnetic molecule per 10,000 matrix molecules. However, there is a fundamental contradiction between reducing decoherence by dilution and allowing quantum operations via the interaction between spin qubits. To resolve this contradiction, the design and engineering of quantum hardware can benefit from a ‘bottom-up’ approach whereby the electronic structure of magnetic molecules is chemically tailored to give the desired physical behaviour. Here we present a way of enhancing coherence in solid-state molecular spin qubits without resorting to extreme dilution. It is based on the design of molecular structures with crystal field ground states possessing large tunnelling gaps that give rise to optimal operating points, or atomic clock transitions, at which the quantum spin dynamics become protected against dipolar decoherence. This approach is illustrated with a holmium molecular nanomagnet in which long coherence times (up to 8.4 microseconds at 5 kelvin) are obtained at unusually high concentrations. This finding opens new avenues for quantum computing based on molecular spin qubits.

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.

PubMed

Wang, Ruijun; Sprengel, Stephan; Boehm, Gerhard; Muneeb, Muhammad; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2016-09-05

Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm² and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm² in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells.

PubMed

Mendes, Manuel J; Hernández, Estela; López, Esther; García-Linares, Pablo; Ramiro, Iñigo; Artacho, Irene; Antolín, Elisa; Tobías, Ignacio; Martí, Antonio; Luque, Antonio

2013-08-30

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude.In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance.The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

NASA Astrophysics Data System (ADS)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Quantum dot SOA/silicon external cavity multi-wavelength laser.

PubMed

Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

2015-02-23

We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

Optical properties of silicon nanocrystals synthesized in supercritical fluids

NASA Astrophysics Data System (ADS)

Pell, Lindsay; Korgel, Brian A.

2002-11-01

We developed a supercritical solution phase synthesis of silicon nanocrystals. High temperature and pressure (500°C, >140 bar) conditions allow a wet chemical approach to this challenging synthesis. Diphenylsilane was used as a silicon precursor and long chain thiols and alcohols were used to sterically stabilize the luminescent nanocrystals. Moderate size separation was achieved via size exclusion chromatography using crosslinked styrene divinylbenzene beads. Size separated fractions of silicon nanocrystals exhibit quantum efficiencies of 12% while polydisperse samples have quantum efficiencies of 5%. Nanocrystal size distributions have been determined with transmission electron microscopy and further characterized with atomic force microscopy (AFM). These silicon nanocrystals have size tunable photoluminescence as indicated by their ensemble spectroscopy and further verified through AFM and single nanocrystal photoluminescence spectroscopy. Fluorescence intermittency (characteristic of single CdSe nanocrystals) is present in our isolated silicon nanocrystals and is one of the criteria used to distinguish single crystals from clusters of particles.

Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab

2013-12-23

We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

NASA Astrophysics Data System (ADS)

Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

2017-02-01

Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

Near-IR photon number resolving detector design

NASA Astrophysics Data System (ADS)

Bogdanski, Jan; Huntington, Elanor H.

2013-05-01

Photon-Number-Resolving-Detection (PNRD) capability is crucial for many Quantum-Information (QI) applications, e.g. for Coherent-State-Quantum-Computing, Linear-Optics-Quantum-Computing. In Quantum-Key-Distribution and Quantum-Secret-Sharing over 1310/1550 nm fiber, two other important, defense and information security related, QI applications, it's crucial for the information transmission security to guarantee that the information carriers (photons) are single. Thus a PNRD can provide an additional security level against eavesdropping. Currently, there are at least a couple of promising PNRD technologies in the Near-Infrared, but all of them require cryogenic cooling. Thus a compact, portable PNRD, based on commercial Avalanche-Photo-Diodes (APDs), could be a very useful instrument for many QI experiments. For an APD-based PNRD, it is crucial to measure the APD-current in the beginning of the avalanche. Thus an efficient cancellation of the APD capacitive spikes is a necessary condition for the very weak APD current measurement. The detector's principle is based on two commercial, pair-matched InGaAs/InP APDs, connected in series. It leads to a great cancelation of the capacitive spikes caused by the narrow (300 ps), differential gate-pulses of maximum 4V amplitude assuming that both pulses are perfectly matched in regards to their phases, amplitudes, and shapes. The cancellation scheme could be used for other APD-technologies, e.g. Silicon, extending the detection spectrum from visible to NIR. The design distinguishes itself from other, APD-based, schemes by its scalability feature and its computer controlled cancellation of the capacitive spikes. Furthermore, both APDs could be equally used for the detection purpose, which opens a possibility for the odd-even photon number parity detection.

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

NASA Astrophysics Data System (ADS)

Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen

2017-03-01

In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations <1 1 0> and <1 0 0> and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90° on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5 nm, 6 nm, 7 nm and 8 nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

Two-electron spin correlations in precision placed donors in silicon.

PubMed

Broome, M A; Gorman, S K; House, M G; Hile, S J; Keizer, J G; Keith, D; Hill, C D; Watson, T F; Baker, W J; Hollenberg, L C L; Simmons, M Y

2018-03-07

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16 ± 1 nm. By utilising an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.

A role for ion implantation in quantum computing

NASA Astrophysics Data System (ADS)

Jamieson, David N.; Prawer, Steven; Andrienko, Igor; Brett, David A.; Millar, Victoria

2001-04-01

We propose to create arrays of phosphorus atoms in silicon for quantum computing using ion implantation. Since the implantation of the ions is essentially random, the yield of usefully spaced atoms is low and therefore some method of registering the passage of a single ion is required. This can be accomplished by implantation of the ions through a thin surface layer consisting of resist. Changes to the chemical and/or electrical properties of the resist will be used to mark the site of the buried ion. For chemical changes, the latent damage will be developed and the atomic force microscope (AFM) used to image the changes in topography. Alternatively, changes in electrical properties (which obviate the need for post-irradiation chemical etching) will be used to register the passage of the ion using scanning tunneling microscopy (STM), the surface current imaging mode of the AFM. We address the central issue of the contrast created by the passage of a single ion through resist layers of PMMA and C 60.

Quantum metrology with a single spin-3/2 defect in silicon carbide

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using the novel features of semiconductor high half-spin multiplet defects with easy-to-implement optical detection protocols. To achieve this, we use the spin- 3 / 2 silicon monovacancy deep center in hexagonal silicon carbide based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single VSi- defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. Other point defects, i.e. 3d transition metal or rare-earth impurities in semiconductors, may also provide similar opportunities in quantum sensing due to their similar high spin (S >= 3 / 2) configurations. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

A monolithically integrated polarization entangled photon pair source on a silicon chip

PubMed Central

Matsuda, Nobuyuki; Le Jeannic, Hanna; Fukuda, Hiroshi; Tsuchizawa, Tai; Munro, William John; Shimizu, Kaoru; Yamada, Koji; Tokura, Yasuhiro; Takesue, Hiroki

2012-01-01

Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip. PMID:23150781

Silicon Quantum Dots for Quantum Information Processing

DTIC Science & Technology

2013-11-01

Thewalt, and K . M. Itoh. Electron spin coherence exceeding seconds in high-purity silicon. Nature Materials, 11(2), 143 (2011). 21 [87] T. Ando, A...120 143 169 REFERENCES [89] M. G. Borselli, R. S. Ross, A. A. Kiselev, E. T. Croke, K . S. Holabird, P. W. Deelman, L. D. Warren, I. Alvarado-Rodriguez...48 3.3.1 4 K Dewar Measurements . . . . . . . . . . . . . . . . . . 48 3.3.2 Dilution

Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.

PubMed

Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G

2016-01-27

Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

Photovoltaic reciprocity and quasi-Fermi level splitting in nanostructure-based solar cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Aeberhard, Urs

2017-04-01

The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions [1]. So far, the theory has been verified for a wide range of devices and material systems and forms the basis of a growing number of luminesecence imaging techniques used in the characterization of photovoltaic materials, cells and modules [2-5]. However, there are also some examples where the theory fails, such as in the case of amorphous silicon. In our contribution, we critically assess the assumptions made in the derivation of the theory and compare its predictions with rigorous formal relations as well as numerical computations in the framework of a comprehensive quantum-kinetic theory of photovoltaics [6] as applied to ultra-thin absorber architectures [7]. One of the main applications of the photovoltaic reciprocity relation is the determination of quasi-Fermi level splittings (QFLS) in solar cells from the measurement of luminescence. In nanostructure-based photovoltaic architectures, the determination of QFLS is challenging, but instrumental to assess the performance potential of the concepts. Here, we use our quasi-Fermi level-free theory to investigate existence and size of QFLS in quantum well and quantum dot solar cells. [1] Uwe Rau. Reciprocity relation between photovoltaic quantum efficiency and electrolumines- cent emission of solar cells. Phys. Rev. B, 76(8):085303, 2007. [2] Thomas Kirchartz and Uwe Rau. Electroluminescence analysis of high efficiency cu(in,ga)se2 solar cells. J. Appl. Phys., 102(10), 2007. [3] Thomas Kirchartz, Uwe Rau, Martin Hermle, Andreas W. Bett, Anke Helbig, and Jrgen H. Werner. Internal voltages in GaInP-GaInAs-Ge multijunction solar cells determined by electro- luminescence measurements. Appl. Phys. Lett., 92(12), 2008. [4] Thomas Kirchartz, Anke Helbig, Wilfried Reetz, Michael Reuter, Jürgen H. Werner, and Uwe Rau. Reciprocity between electroluminescence and quantum efficiency used for the characterization of silicon solar cells. Prog. Photovolt: Res. Appl., 17(6):394-402, 2009. [5] U. Hoyer, M. Wagner, Th. Swonke, J. Bachmann, R. Auer, A. Osvet, and C. J. Brabec. Electroluminescence imaging of organic photovoltaic modules. Appl. Phys. Lett., 97(23), 2010. [6] U. Aeberhard. Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Greens function formalism. J. Comput. Electron., 10:394-413, 2011. [7] U. Aeberhard. Simulation of ultrathin solar cells beyond the limits of the semiclassical bulk picture. IEEE J. Photovolt., 6(3):654-660, 2016.

Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Davidson, Frederic; Sun, Xiaoli

1989-01-01

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

NASA Astrophysics Data System (ADS)

Mi, X.; Cady, J. V.; Zajac, D. M.; Stehlik, J.; Edge, L. F.; Petta, J. R.

2017-01-01

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

Direct conversion of hydride- to siloxane-terminated silicon quantum dots

DOE PAGES

Anderson, Ryan T.; Zang, Xiaoning; Fernando, Roshan; ...

2016-10-20

Here, peripheral surface functionalization of hydride-terminated silicon quantum dots (SiQD) is necessary in order to minimize their oxidation/aggregation and allow for solution processability. Historically thermal hydrosilylation addition of alkenes and alkynes across the Si-H surface to form Si-C bonds has been the primary method to achieve this. Here we demonstrate a mild alternative approach to functionalize hydride-terminated SiQDs using bulky silanols in the presence of free-radical initiators to form stable siloxane (~Si-O-SiR 3) surfaces with hydrogen gas as a byproduct. This offers an alternative to existing methods of forming siloxane surfaces that require corrosive Si-Cl based chemistry with HCl byproducts.more » A 52 nm blue shift in the photoluminescent spectra of siloxane versus alkyl-functionalized SiQDs is observed that we explain using computational theory. Model compound synthesis of silane and silsesquioxane analogues is used to optimize surface chemistry and elucidate reaction mechanisms. Thorough characterization on the extent of siloxane surface coverage is provided using FTIR and XPS. As a result, TEM is used to demonstrate SiQD size and integrity after surface chemistry and product isolation.« less

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Quantum efficiencies exceeding unity in amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanmaekelbergh, D.; Lagemaat, J. van de; Schropp, R.E.I.

1994-12-31

The experimental observation of internal quantum efficiencies above unity in crystalline silicon solar cells has brought up the question whether the generation of multiple electron/hole pairs has to be taken into consideration also in solar cells based on direct gap amorphous semiconductors. To study photogenerated carrier dynamics, the authors have applied Intensity Modulated Photocurrent Spectroscopy (IMPS) to hydrogenated amorphous silicon p-i-n solar cells. In the reverse voltage bias region at low illumination intensities it has been observed that the low frequency limit of the AC quantum yield Y increases significantly above unit with decreasing light intensity, indicating that more thanmore » one electron per photon is detected in the external circuit. This phenomenon can be explained by considering trapping and thermal emission of photogenerated carriers at intragap atmospheric dangling bond defect centers.« less

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution

DOE PAGES

Cai, Hong; Long, Christopher M.; DeRose, Christopher T.; ...

2017-01-01

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution.

PubMed

Cai, Hong; Long, Christopher M; DeRose, Christopher T; Boynton, Nicholas; Urayama, Junji; Camacho, Ryan; Pomerene, Andrew; Starbuck, Andrew L; Trotter, Douglas C; Davids, Paul S; Lentine, Anthony L

2017-05-29

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Hong; Long, Christopher M.; DeRose, Christopher T.

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Fabrication et caracterisation de cristaux photoniques pour exaltation de fluorescence

NASA Astrophysics Data System (ADS)

Gascon, Annabelle

2011-12-01

In today's world, there is a pressing need for point-of-care molecular analysis that is fast, inexpensive and transportable. Lab-on-a- chips are designed to fulfill that need. They are micro-electromechanical systems (MEMS), fabricated with microelectronic techniques, that use the analytes physical properties to detect their presence in liquid samples. This detection can be performed by attaching the analyte to quantum dots. These quantum dots are semiconducting nanoparticles with narrow fluorescence band. In our project, we use a tuneable system with a two-slab photonic crystal that serves as a tuneable optical filter, detecting the presence and wavelength of these quantum dots. Photonic crystals are dielectrics with a variable refractive index, with a period near the visible light wavelength. They are called photonic crystals because they have a photonic band gap just as atomic crystals, periodic structure of atoms, have an electronic band gap. They are photonic because photons instead of electrons propagate through them. They can also enhance fluorescence from quantum dots at the photonic crystals guided resonance wavelength. My project objectives are to: (1) Fabricate two-slab photonic crystal, (2) Characterize photonic crystals, (3) Place quantum dots on photonic crystals, (4) Measure fluorescence enhancement. The device made during this project consists of a silicon wafer on which were deposited a 200 nm silicon nitride layer, then a 200 nm silicon dioxide layer and finally another 200 nm silicon nitride layer. An electron-beam lithography defines the photonic crystals and the MEMS. The photonic crystals are square lattices of holes 180 nm in diameter, at a period of 460 nm, etched through the two silicon nitride slabs. The two slabs are etched in a single step of Reactive Ion Etching (RIE). Then, the silicon under the photonic crystal is etched from the backside up to the nitride by deep-RIE. Finally, the oxide layer is removed in order to completely suspend the two-slab photonic crystal. The M EMS can change the gap between the two slabs in order to tune the guided resonance wavelength. An optical set-up is used to trace the photonic crystals transmission and reflection spectrum, in order to know the guided resonance position. A supercontinuum source illuminates the device at a normal incidence angle for wavelength between 400 nm and 800 nm. High-resolution spectra are obtained with a CCD camera spectrometer. Different types of one-slab photonic crystals are analyzed with this approach: we observe guided resonance peaks near 550 nm, 615 nm and 700 nm. Finally, a quantum dots microdrop is placed on the photonic crystal. The quantum dots emission wavelength matches with the photonic crystal guided resonance. A hyperspectral fluorescence microscope excites quantum dots between 436 nm and 483 nm, detects emission greater than 500 nm and plots a fluorescence wavelength spectrum. This set-up measures and compares the fluorescence of the quantum dots placed on and next to the photonic crystals. Our results show that the fluorescence is 30 times higher on the photonic crystals, but the fluorescence wavelength corresponds neither to the quantum dots emission nor to the photonic crystal guided resonance. In conclusion, this master thesis project demonstrates that it is possible to fabricate two-slab photonic crystals in silicon nitride and to plot their transmission and reflection spectra in order to find their guided resonance position. A fluorescence enhancement is visible, but at a different wavelength than of the quantum dots.

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

PubMed

Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

2015-09-02

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

2018-04-01

We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

Metropolitan Quantum Key Distribution with Silicon Photonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalablemore » resource for future formation of metropolitan quantum-secure communications networks.« less

Metropolitan Quantum Key Distribution with Silicon Photonics

DOE PAGES

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; ...

2018-04-06

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalablemore » resource for future formation of metropolitan quantum-secure communications networks.« less

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities

PubMed Central

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures’ refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times. PMID:28045442

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

PubMed

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

2016-07-04

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

Metropolitan Quantum Key Distribution with Silicon Photonics

NASA Astrophysics Data System (ADS)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; Cai, Hong; Long, Christopher M.; Boynton, Nicholas; Martinez, Nicholas; DeRose, Christopher; Chen, Changchen; Grein, Matthew; Trotter, Douglas; Starbuck, Andrew; Pomerene, Andrew; Hamilton, Scott; Wong, Franco N. C.; Camacho, Ryan; Davids, Paul; Urayama, Junji; Englund, Dirk

2018-04-01

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

Two-axis control of a singlet-triplet qubit with an integrated micromagnet.

DOE PAGES

Wu, Xian; Ward, D. R.; Prance, J. R.; ...

2014-08-04

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double-quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micromagnet, the magnetic field difference ΔB between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit’s Bloch vector around two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time T*2 is determined. By measuringmore » T*2 at many different values of the exchange coupling J and at two different values of ΔB, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on T*2 arising from charge noise and from coupling to nuclear spins.« less

Colloidal silicon quantum dots: synthesis and luminescence tuning from the near-UV to the near-IR range

PubMed Central

Ghosh, Batu; Shirahata, Naoto

2014-01-01

This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable efforts in surface functionalization of QDs have categorized it into (i) a two-step process and (ii) in situ surface derivatization. Photophysical properties of QDs are summarized to highlight the continuous tuning of photoluminescence color from the near-UV through visible to the near-IR range. The emission features strongly depend on the silicon nanostructures including QD surface configurations. Possible mechanisms of photoluminescence have been summarized to ascertain the future challenges toward industrial use of silicon-based light emitters. PMID:27877634

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

NASA Astrophysics Data System (ADS)

Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

2017-03-01

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

The effect of axial ligands on the quantum yield of singlet oxygen of new silicon phthalocyanine

NASA Astrophysics Data System (ADS)

Lv, Huafei; Zhang, Xuemei; Yu, Xinxin; Pan, Sujuan; Xie, Shusen; Yang, Hongqin; Peng, Yiru

2016-10-01

The singlet oxygen (1O2) production abilitity is an important factor to assess their potential as effective of photosensitizers. In this paper, the 1O2 production rate, production rate constant and quantum yield of silicon(IV) phthalocyanine axially bearing 1-3 generation dendritic substituents were evaluated by a high performance liquid chromatographic method. The results show that the 1O2 production rate and production rate constant of these compounds increase gradually with dendritic generations increase. And the 1O2 quantum yield of silicon(IV) phthalocyanine with first generation dendritic ligand was the highest. This may be due to the isolation effect of the dendritic ligands on the phthalocyanine core. The parameters of the observed 1O2 production properties will provide valuable data for these dendrimer phthalocyanines as promising photosensitizer in PDT application.

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

NASA Astrophysics Data System (ADS)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

2014-01-01

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Will spin-relaxation times in molecular magnets permit quantum information processing?

NASA Astrophysics Data System (ADS)

Ardavan, Arzhang

2007-03-01

Certain computational tasks can be efficiently implemented using quantum logic, in which the information-carrying elements are permitted to exist in quantum superpositions. To achieve this in practice, a physical system that is suitable for embodying quantum bits (qubits) must be identified. Some proposed scenarios employ electron spins in the solid state, for example phosphorous donors in silicon, quantum dots, heterostructures and endohedral fullerenes, motivated by the long electron-spin relaxation times exhibited by these systems. An alternative electron-spin based proposal exploits the large number of quantum states and the non-degenerate transitions available in high spin molecular magnets. Although these advantages have stimulated vigorous research in molecular magnets, the key question of whether the intrinsic spin relaxation times are long enough has hitherto remained unaddressed. Using X-band pulsed electron spin resonance, we measure the intrinsic spin-lattice (T1) and phase coherence (T2) relaxation times in molecular nanomagnets for the first time. In Cr7M heterometallic wheels, with M = Ni and Mn, phase coherence relaxation is dominated by the coupling of the electron spin to protons within the molecule. In deuterated samples T2 reaches 3 μs at low temperatures, which is several orders of magnitude longer than the duration of spin manipulations, satisfying a prerequisite for the deployment of molecular nanomagnets in quantum information applications.

Entanglement in a solid-state spin ensemble.

PubMed

Simmons, Stephanie; Brown, Richard M; Riemann, Helge; Abrosimov, Nikolai V; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Mike L W; Itoh, Kohei M; Morton, John J L

2011-02-03

Entanglement is the quintessential quantum phenomenon. It is a necessary ingredient in most emerging quantum technologies, including quantum repeaters, quantum information processing and the strongest forms of quantum cryptography. Spin ensembles, such as those used in liquid-state nuclear magnetic resonance, have been important for the development of quantum control methods. However, these demonstrations contain no entanglement and ultimately constitute classical simulations of quantum algorithms. Here we report the on-demand generation of entanglement between an ensemble of electron and nuclear spins in isotopically engineered, phosphorus-doped silicon. We combined high-field (3.4 T), low-temperature (2.9 K) electron spin resonance with hyperpolarization of the (31)P nuclear spin to obtain an initial state of sufficient purity to create a non-classical, inseparable state. The state was verified using density matrix tomography based on geometric phase gates, and had a fidelity of 98% relative to the ideal state at this field and temperature. The entanglement operation was performed simultaneously, with high fidelity, on 10(10) spin pairs; this fulfils one of the essential requirements for a silicon-based quantum information processor.

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

PubMed

Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2015-10-05

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

Studies of mist deposition for the formation of quantum dot CdSe films

NASA Astrophysics Data System (ADS)

Price, S. C.; Shanmugasundaram, K.; Ramani, S.; Zhu, T.; Zhang, F.; Xu, J.; Mohney, S. E.; Zhang, Q.; Kshirsagar, A.; Ruzyllo, J.

2009-10-01

Films of CdSe(ZnS) colloidal nanocrystalline quantum dots (NQDs) were deposited on bare silicon, glass and polymer coated silicon using mist deposition. This effort is a part of an exploratory investigation in which this deposition technique is studied for the first time as a method to form semiconductor NQD films. The process parameters, including deposition time, solution concentration and electric field, were varied to change the thickness of the deposited film. Blanket films and films deposited through a shadow mask were created to investigate the method's ability to pattern films during the deposition process. The differences between these deposition modes in terms of film morphology were observed. Overall, the results show that mist deposition of quantum dots is a viable method for creating thin, patterned quantum dot films using colloidal solution as the precursor. It is concluded that this technique shows very good promise for quantum dot (light emitting diode, LED) fabrication.

Qubit entanglement between ring-resonator photon-pair sources on a silicon chip

PubMed Central

Silverstone, J. W.; Santagati, R.; Bonneau, D.; Strain, M. J.; Sorel, M.; O'Brien, J. L.; Thompson, M. G.

2015-01-01

Entanglement—one of the most delicate phenomena in nature—is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale. PMID:26245267

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Design and characterization of integrated components for SiN photonic quantum circuits.

PubMed

Poot, Menno; Schuck, Carsten; Ma, Xiao-Song; Guo, Xiang; Tang, Hong X

2016-04-04

The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations.

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

NASA Astrophysics Data System (ADS)

Jaud, Marie-Anne; Barraud, Sylvain; Saint-Martin, Jérôme; Bournel, Arnaud; Dollfus, Philippe; Jaouen, Hervé

2008-12-01

A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

NASA Astrophysics Data System (ADS)

Nadtochiy, A. M.; Kryzhanovskaya, N. V.; Maximov, M. V.; Zhukov, A. E.; Moiseev, E. I.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu. M.; Mukhin, I. S.; Arakcheeva, E. M.; Livshits, D.; Lipovskii, A. A.

2013-09-01

Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 μW and λ/Δλ ˜ 27000.

Fine Splitting of Electron States in Silicon Nanocrystal with a Hydrogen-like Shallow Donor

PubMed Central

2007-01-01

Electron structure of a silicon quantum dot doped with a shallow hydrogen-like donor has been calculated for the electron states above the optical gap. Within the framework of the envelope-function approach we have calculated the fine splitting of the ground sixfold degenerate electron state as a function of the donor position inside the quantum dot. Also, dependence of the wave functions and energies on the dot size was obtained.

Entangling distant resonant exchange qubits via circuit quantum electrodynamics

NASA Astrophysics Data System (ADS)

Srinivasa, V.; Taylor, J. M.; Tahan, Charles

2016-11-01

We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.

Tritiated amorphous silicon for micropower applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kherani, N.P.; Kosteski, T.; Zukotynski, S.

1995-10-01

The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in themore » visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.« less

Plasticity and Kinky Chemistry of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Dzegilenko, Fedor

2000-01-01

Since their discovery in 1991, carbon nanotubes have been the subject of intense research interest based on early predictions of their unique mechanical, electronic, and chemical properties. Materials with the predicted unique properties of carbon nanotubes are of great interest for use in future generations of aerospace vehicles. For their structural properties, carbon nanotubes could be used as reinforcing fibers in ultralight multifunctional composites. For their electronic properties, carbon nanotubes offer the potential of very high-speed, low-power computing elements, high-density data storage, and unique sensors. In a continuing effort to model and predict the properties of carbon nanotubes, Ames accomplished three significant results during FY99. First, accurate values of the nanomechanics and plasticity of carbon nanotubes based on quantum molecular dynamics simulations were computed. Second, the concept of mechanical deformation catalyzed-kinky-chemistry as a means to control local chemistry of nanotubes was discovered. Third, the ease of nano-indentation of silicon surfaces with carbon nanotubes was established. The elastic response and plastic failure mechanisms of single-wall nanotubes were investigated by means of quantum molecular dynamics simulations.

Nanoscale light–matter interactions in atomic cladding waveguides

PubMed Central

Stern, Liron; Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2013-01-01

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light–matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light–vapour interactions on a chip. Specifically, we demonstrate light–matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime. PMID:23462991

Biocompatible silicon quantum dots by ultrasound-induced solution route

NASA Astrophysics Data System (ADS)

Lee, Soojin; Cho, Woon-Jo

2004-10-01

The water-soluble silicon quantum dots (QDs) of average diameter ~3 nm were prepared in organic solvent by ultrasound-induced solution route. This speedy rout produces the silicon QDs in the size range from 2 nm to 4 nm at room temperature and ambient pressure. The product yield of QDs was estimated to be higher than 60 % based on the initial NaSi weight. The surfaces of QDs were terminated with organic molecules including biocompatible ending groups (hydroxyl, amine and carboxyl) during simple preparation. Covalent attached molecules were characterized by FT-IR spectroscopy. These water-soluble passivation of QDs has just a little effect on the optical properties of original QDs.

Broadly tunable terahertz difference-frequency generation in quantum cascade lasers on silicon

NASA Astrophysics Data System (ADS)

Jung, Seungyong; Kim, Jae Hyun; Jiang, Yifan; Vijayraghavan, Karun; Belkin, Mikhail A.

2018-01-01

We report broadly tunable terahertz (THz) sources based on intracavity Cherenkov difference-frequency generation in quantum cascade lasers transfer-printed on high-resistivity silicon substrates. Spectral tuning from 1.3 to 4.3 THz was obtained from a 2-mm long laser chip using a modified Littrow external cavity setup. The THz power output and the midinfrared-to-THz conversion efficiency of the devices transferred on silicon are dramatically enhanced, compared with the devices on a native semi-insulating InP substrate. Enhancement is particularly significant at higher THz frequencies, where the tail of the Reststrahlen band results in a strong absorption of THz light in the InP substrate.

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

NASA Technical Reports Server (NTRS)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

High-efficiency power transfer for silicon-based photonic devices

NASA Astrophysics Data System (ADS)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

PubMed

Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

2012-12-17

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Silicon Solar Cell Efficiency Improvement Employing the Photoluminescent, Down-Shifting Effects of Carbon and CdTe Quantum Dots (Open Access Publisher’s Version)

DTIC Science & Technology

2016-03-21

ORIGINAL PAPER Silicon solar cell efficiency improvement employing the photoluminescent, down-shifting effects of carbon and CdTe quantum dots Elias...smaller influence on solar cell performance, they are con- sidered to be a more attractive option due to their afford- ability and minimal impact in the...Photovoltaics Solar cells Introduction There is a generalized trend to demonstrate higher solar cell efficiency with more affordable devices to promote

Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

NASA Astrophysics Data System (ADS)

Wang, Junfeng; Zhou, Yu; Zhang, Xiaoming; Liu, Fucai; Li, Yan; Li, Ke; Liu, Zheng; Wang, Guanzhong; Gao, Weibo

2017-06-01

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. In this paper, we report an experimental demonstration of the generation of a single-photon-emitter array through ion implantation. VSi defects are generated in predetermined locations with high generation efficiency (approximately 19 % ±4 % ). The single emitter probability reaches approximately 34 % ±4 % when the ion-implantation dose is properly set. This method serves as a critical step in integrating single VSi defect emitters with photonic structures, which, in turn, can improve the emission and collection efficiency of VSi defects when they are used in a spin photonic quantum network. On the other hand, the defects are shallow, and they are generated about 40 nm below the surface which can serve as a critical resource in quantum-sensing applications.

Valley splitting of single-electron Si MOS quantum dots

DOE PAGES

Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; ...

2016-12-19

Here, silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physicsmore » between the two samples is essentially the same.« less

Remote quantum entanglement between two micromechanical oscillators.

PubMed

Riedinger, Ralf; Wallucks, Andreas; Marinković, Igor; Löschnauer, Clemens; Aspelmeyer, Markus; Hong, Sungkun; Gröblacher, Simon

2018-04-01

Entanglement, an essential feature of quantum theory that allows for inseparable quantum correlations to be shared between distant parties, is a crucial resource for quantum networks 1 . Of particular importance is the ability to distribute entanglement between remote objects that can also serve as quantum memories. This has been previously realized using systems such as warm 2,3 and cold atomic vapours 4,5 , individual atoms 6 and ions 7,8 , and defects in solid-state systems 9-11 . Practical communication applications require a combination of several advantageous features, such as a particular operating wavelength, high bandwidth and long memory lifetimes. Here we introduce a purely micromachined solid-state platform in the form of chip-based optomechanical resonators made of nanostructured silicon beams. We create and demonstrate entanglement between two micromechanical oscillators across two chips that are separated by 20 centimetres . The entangled quantum state is distributed by an optical field at a designed wavelength near 1,550 nanometres. Therefore, our system can be directly incorporated in a realistic fibre-optic quantum network operating in the conventional optical telecommunication band. Our results are an important step towards the development of large-area quantum networks based on silicon photonics.

Biomolecular computers with multiple restriction enzymes.

PubMed

Sakowski, Sebastian; Krasinski, Tadeusz; Waldmajer, Jacek; Sarnik, Joanna; Blasiak, Janusz; Poplawski, Tomasz

2017-01-01

The development of conventional, silicon-based computers has several limitations, including some related to the Heisenberg uncertainty principle and the von Neumann "bottleneck". Biomolecular computers based on DNA and proteins are largely free of these disadvantages and, along with quantum computers, are reasonable alternatives to their conventional counterparts in some applications. The idea of a DNA computer proposed by Ehud Shapiro's group at the Weizmann Institute of Science was developed using one restriction enzyme as hardware and DNA fragments (the transition molecules) as software and input/output signals. This computer represented a two-state two-symbol finite automaton that was subsequently extended by using two restriction enzymes. In this paper, we propose the idea of a multistate biomolecular computer with multiple commercially available restriction enzymes as hardware. Additionally, an algorithmic method for the construction of transition molecules in the DNA computer based on the use of multiple restriction enzymes is presented. We use this method to construct multistate, biomolecular, nondeterministic finite automata with four commercially available restriction enzymes as hardware. We also describe an experimental applicaton of this theoretical model to a biomolecular finite automaton made of four endonucleases.

Isotopically enhanced triple-quantum-dot qubit

PubMed Central

Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron; Borselli, Matthew G.; Kiselev, Andrey A.; Fong, Bryan H.; Holabird, Kevin S.; Hazard, Thomas M.; Huang, Biqin; Deelman, Peter W.; Milosavljevic, Ivan; Schmitz, Adele E.; Ross, Richard S.; Gyure, Mark F.; Hunter, Andrew T.

2015-01-01

Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking. PMID:26601186

Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots.

PubMed

Douglas-Gallardo, Oscar A; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban

2018-04-14

Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

PubMed Central

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-01-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices. PMID:28406177

Communication: Photoinduced carbon dioxide binding with surface-functionalized silicon quantum dots

NASA Astrophysics Data System (ADS)

Douglas-Gallardo, Oscar A.; Sánchez, Cristián Gabriel; Vöhringer-Martinez, Esteban

2018-04-01

Nowadays, the search for efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf-SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). The chemical and electronic properties of the proposed SiQDs have been studied with a Density Functional Theory and Density Functional Tight-Binding (DFTB) approach along with a time-dependent model based on the DFTB framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf-SiQDs for photochemically activated carbon dioxide fixation.

Synthesis of photochromic nanoparticles and determination of the mechanism of photochromism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inoue, Shuhei, E-mail: shu18@hiroshima-u.ac.jp; Matsumura, Yukihiko; Kawamoto, Takahiro

2016-05-15

Photochromic nanoparticles of zinc-silicon oxide were synthesized using plasma enhanced chemical vapor deposition. These particles turned black upon irradiating with ultraviolet light. We investigated this phenomenon using density functional theory calculations. Silicon inclusions create trap levels and oxygen defects that reduce the ionization potential of ZnO. This forms a quantum potential between ZnO and zinc-silicon oxide, and the excited electron is stable. Because oxygen defects also increase the bond overlap population between the zinc atoms in a ZnO crystal, they introduce further defects and help in the formation of quantum potentials. Growth of a perfect crystal of ZnO prevents themore » formation of oxygen defects, which is not desirable for photochromism.« less

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

NASA Astrophysics Data System (ADS)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Photonic zero mode in a non-Hermitian photonic lattice.

PubMed

Pan, Mingsen; Zhao, Han; Miao, Pei; Longhi, Stefano; Feng, Liang

2018-04-03

Zero-energy particles (such as Majorana fermions) are newly predicted quasiparticles and are expected to play an important role in fault-tolerant quantum computation. In conventional Hermitian quantum systems, however, such zero states are vulnerable and even become vanishing if couplings with surroundings are of the same topological nature. Here we demonstrate a robust photonic zero mode sustained by a spatial non-Hermitian phase transition in a parity-time (PT) symmetric lattice, despite the same topological order across the entire system. The non-Hermitian-enhanced topological protection ensures the reemergence of the zero mode at the phase transition interface when the two semi-lattices under different PT phases are decoupled effectively in their real spectra. Residing at the midgap level of the PT symmetric spectrum, the zero mode is topologically protected against topological disorder. We experimentally validated the robustness of the zero-energy mode by ultrafast heterodyne measurements of light transport dynamics in a silicon waveguide lattice.

Plasma Enabled Fabrication of Silicon Carbide Nanostructures

NASA Astrophysics Data System (ADS)

Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya (Ken)

Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

Coherent coupling between a quantum dot and a donor in silicon

DOE PAGES

Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin; ...

2017-10-18

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show thatmore » the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.« less

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

NASA Astrophysics Data System (ADS)

Samanta, Arup; Muruganathan, Manoharan; Hori, Masahiro; Ono, Yukinori; Mizuta, Hiroshi; Tabe, Michiharu; Moraru, Daniel

2017-02-01

Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for functionality at the atomic level with one-by-one control of electrons. However, single-electron effects in donor-atom devices have only been observed at low temperatures mainly due to the low tunnel barriers. If a few donor-atoms are closely coupled as a molecule to form a quantum dot, the ground-state energy level is significantly deepened, leading to higher tunnel barriers. Here, we demonstrate that such an a-few-donor quantum dot, formed by selective conventional doping of phosphorus (P) donors in a Si nano-channel, sustains Coulomb blockade behavior even at room temperature. In this work, such a quantum dot is formed by 3 P-donors located near the center of the selectively-doped area, which is consistent with a statistical analysis. This finding demonstrates practical conditions for atomic- and molecular-level electronics based on donor-atoms in silicon nanodevices.

Computational Study of Field Initiated Surface Reactions for Synthesis of Diamond and Silicon

NASA Technical Reports Server (NTRS)

Musgrave, Charles Bruce

1999-01-01

This project involves using quantum chemistry to simulate surface chemical reactions in the presence of an electric field for nanofabrication of diamond and silicon. A field delivered by a scanning tunneling microscope (STM) to a nanometer scale region of a surface affects chemical reaction potential energy surfaces (PES) to direct atomic scale surface modification to fabricate sub-nanometer structures. Our original hypothesis is that the applied voltage polarizes the charge distribution of the valence electrons and that these distorted molecular orbitals can be manipulated with the STM so as to change the relative stabilities of the electronic configurations over the reaction coordinates and thus the topology of the PES and reaction kinetics. Our objective is to investigate the effect of applied bias on surface reactions and the extent to which STM delivered fields can be used to direct surface chemical reactions on an atomic scale on diamond and silicon. To analyze the fundamentals of field induced chemistry and to investigate the application of this technique for the fabrication of nanostructures, we have employed methods capable of accurately describing molecular electronic structure. The methods we employ are density functional theory (DFT) quantum chemical (QC) methods. To determine the effect of applied bias on surface reactions we have calculated the QC PESs in various applied external fields for various reaction steps for depositing or etching diamond and silicon. We have chosen reactions which are thought to play a role in etching and the chemical vapor deposition growth of Si and diamond. The PESs of the elementary reaction steps involved are then calculated under the applied fields, which we vary in magnitude and configuration. We pay special attention to the change in the reaction barriers, and transition state locations, and search for low energy reaction channels which were inaccessible without the applied bias.

Determination of the Quantum Efficiency of a Light Detector

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2008-01-01

The "quantum efficiency" (QE) is an important property of a light detector. This quantity can be determined in the undergraduate physics laboratory. The experimentally determined QE of a silicon photodiode appeared to be in reasonable agreement with expected values. The experiment confirms the quantum properties of light and seems to be a useful…

Simulation of silicon thin-film solar cells for oblique incident waves

NASA Astrophysics Data System (ADS)

Jandl, Christine; Hertel, Kai; Pflaum, Christoph; Stiebig, Helmut

2011-05-01

To optimize the quantum efficiency (QE) and short-circuit current density (JSC) of silicon thin-film solar cells, one has to study the behavior of sunlight in these solar cells. Simulations are an adequate and economic method to analyze the optical properties of light caused by absorption and reflection. To this end a simulation tool is developed to take several demands into account. These include the analysis of perpendicular and oblique incident waves under E-, H- and circularly polarized light. Furthermore, the topology of the nanotextured interfaces influences the efficiency and therefore also the short-circuit current density. It is well known that a rough transparent conductive oxide (TCO) layer increases the efficiency of solar cells. Therefore, it is indispensable that various roughness profiles at the interfaces of the solar cell layers can be modeled in such a way that atomic force microscope (AFM) scan data can be integrated. Numerical calculations of Maxwell's equations based on the finite integration technique (FIT) and Finite Difference Time Domain (FDTD) method are necessary to incorporate all these requirements. The simulations are performed in parallel on high performance computers (HPC) to meet the large computational requirements.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Quantum Theory and the Silicon Revolution. Resources in Technology.

ERIC Educational Resources Information Center

Deal, Walter F., III

1995-01-01

This learning activity describes silicon as one of the most plentiful materials on earth, demonstrating how it supplies the building blocks for electronic devices such as transistors, integrated circuits, and microprocessors. It includes a design brief on control technology. (JOW)

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

A dressed spin qubit in silicon

DOE PAGES

Laucht, Arne; Kalra, Rachpon; Simmons, Stephanie; ...

2016-10-17

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties—a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of T* 2p = 2.4 ms andmore » T Hahn 2p = 9 ms, one order of magnitude longer than those of the undressed spin. Moreover, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.« less

Design considerations for multielectron double quantum dot qubits in silicon

NASA Astrophysics Data System (ADS)

Nielsen, Erik; Barnes, Edwin; Kestner, Jason

2014-03-01

Solid state double quantum dot (DQD) spin qubits can be created by confining two electrons to a DQD potential. We present results showing the viability and potential advantages of creating a DQD spin qubit with greater than two electrons, and which suggest that silicon devices which could realize these advantages are experimentally possible. Our analysis of a six-electron DQD uses full configuration interaction methods and shows an isolated qubit space in regimes which 3D quantum device simulations indicate are accessible experimentally. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Microfabrication of low-loss lumped-element Josephson circuits for non-reciprocal and parametric devices

NASA Astrophysics Data System (ADS)

Cicak, Katarina; Lecocq, Florent; Ranzani, Leonardo; Peterson, Gabriel A.; Kotler, Shlomi; Teufel, John D.; Simmonds, Raymond W.; Aumentado, Jose

Recent developments in coupled mode theory have opened the doors to new nonreciprocal amplification techniques that can be directly leveraged to produce high quantum efficiency in current measurements in microwave quantum information. However, taking advantage of these techniques requires flexible multi-mode circuit designs comprised of low-loss materials that can be implemented using common fabrication techniques. In this talk we discuss the design and fabrication of a new class of multi-pole lumped-element superconducting parametric amplifiers based on Nb/Al-AlOx/Nb Josephson junctions on silicon or sapphire. To reduce intrinsic loss in these circuits we utilize PECVD amorphous silicon as a low-loss dielectric (tanδ 5 ×10-4), resulting in nearly quantum-limited directional amplification.

High-speed polarization-encoded quantum key distribution based on silicon photonic integrated devices

NASA Astrophysics Data System (ADS)

Bunandar, Darius; Urayama, Junji; Boynton, Nicholas; Martinez, Nicholas; Derose, Christopher; Lentine, Anthony; Davids, Paul; Camacho, Ryan; Wong, Franco; Englund, Dirk

We present a compact polarization-encoded quantum key distribution (QKD) transmitter near a 1550-nm wavelength implemented on a CMOS-compatible silicon-on-insulator photonics platform. The transmitter generates arbitrary polarization qubits at gigahertz bandwidth with an extinction ratio better than 30 dB using high-speed carrier-depletion phase modulators. We demonstrate the performance of this device by generating secret keys at a rate of 1 Mbps in a complete QKD field test. Our work shows the potential of using advanced photonic integrated circuits to enable high-speed quantum-secure communications. This work was supported by the SECANT QKD Grand Challenge, the Samsung Global Research Outreach Program, and the Air Force Office of Scientific Research.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Space division multiplexing chip-to-chip quantum key distribution.

PubMed

Bacco, Davide; Ding, Yunhong; Dalgaard, Kjeld; Rottwitt, Karsten; Oxenløwe, Leif Katsuo

2017-09-29

Quantum cryptography is set to become a key technology for future secure communications. However, to get maximum benefit in communication networks, transmission links will need to be shared among several quantum keys for several independent users. Such links will enable switching in quantum network nodes of the quantum keys to their respective destinations. In this paper we present an experimental demonstration of a photonic integrated silicon chip quantum key distribution protocols based on space division multiplexing (SDM), through multicore fiber technology. Parallel and independent quantum keys are obtained, which are useful in crypto-systems and future quantum network.

Interfacing External Quantum Devices to a Universal Quantum Computer

PubMed Central

Lagana, Antonio A.; Lohe, Max A.; von Smekal, Lorenz

2011-01-01

We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. PMID:22216276

Interfacing external quantum devices to a universal quantum computer.

PubMed

Lagana, Antonio A; Lohe, Max A; von Smekal, Lorenz

2011-01-01

We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. © 2011 Lagana et al.

Universal blind quantum computation for hybrid system

NASA Astrophysics Data System (ADS)

Huang, He-Liang; Bao, Wan-Su; Li, Tan; Li, Feng-Guang; Fu, Xiang-Qun; Zhang, Shuo; Zhang, Hai-Long; Wang, Xiang

2017-08-01

As progress on the development of building quantum computer continues to advance, first-generation practical quantum computers will be available for ordinary users in the cloud style similar to IBM's Quantum Experience nowadays. Clients can remotely access the quantum servers using some simple devices. In such a situation, it is of prime importance to keep the security of the client's information. Blind quantum computation protocols enable a client with limited quantum technology to delegate her quantum computation to a quantum server without leaking any privacy. To date, blind quantum computation has been considered only for an individual quantum system. However, practical universal quantum computer is likely to be a hybrid system. Here, we take the first step to construct a framework of blind quantum computation for the hybrid system, which provides a more feasible way for scalable blind quantum computation.

Senior Research Fellow Wins Major International Science Award | News | NREL

Science.gov Websites

generation (MEG) in semiconductor nanocrystals, also called quantum dots, and recently found efficient MEG in silicon quantum dots. He shares the award with Stefan W. Glunz of the Fraunhofer Institute in Germany

Parallel Decomposition of the Fictitious Lagrangian Algorithm and its Accuracy for Molecular Dynamics Simulations of Semiconductors.

NASA Astrophysics Data System (ADS)

Yeh, Mei-Ling

We have performed a parallel decomposition of the fictitious Lagrangian method for molecular dynamics with tight-binding total energy expression into the hypercube computer. This is the first time in literature that the dynamical simulation of semiconducting systems containing more than 512 silicon atoms has become possible with the electrons treated as quantum particles. With the utilization of the Intel Paragon system, our timing analysis predicts that our code is expected to perform realistic simulations on very large systems consisting of thousands of atoms with time requirements of the order of tens of hours. Timing results and performance analysis of our parallel code are presented in terms of calculation time, communication time, and setup time. The accuracy of the fictitious Lagrangian method in molecular dynamics simulation is also investigated, especially the energy conservation of the total energy of ions. We find that the accuracy of the fictitious Lagrangian scheme in small silicon cluster and very large silicon system simulations is good for as long as the simulations proceed, even though we quench the electronic coordinates to the Born-Oppenheimer surface only in the beginning of the run. The kinetic energy of electrons does not increase as time goes on, and the energy conservation of the ionic subsystem remains very good. This means that, as far as the ionic subsystem is concerned, the electrons are on the average in the true quantum ground states. We also tie up some odds and ends regarding a few remaining questions about the fictitious Lagrangian method, such as the difference between the results obtained from the Gram-Schmidt and SHAKE method of orthonormalization, and differences between simulations where the electrons are quenched to the Born -Oppenheimer surface only once compared with periodic quenching.

Vanadium supersaturated silicon system: a theoretical and experimental approach

NASA Astrophysics Data System (ADS)

Garcia-Hemme, Eric; García, Gregorio; Palacios, Pablo; Montero, Daniel; García-Hernansanz, Rodrigo; Gonzalez-Diaz, Germán; Wahnon, Perla

2017-12-01

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

NASA Astrophysics Data System (ADS)

Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

Novel axially carborane-cage substituted silicon phthalocyanine photosensitizer; synthesis, characterization and photophysicochemical properties

NASA Astrophysics Data System (ADS)

Atmaca, Göknur Yaşa; Dizman, Cemil; Eren, Tarık; Erdoğmuş, Ali

2015-02-01

The novel axially dicarborane substituted silicon (IV) (SiPc-DC) phthalocyanine was synthesized by treating silicon phthalocyanine dichloride SiPc(Cl)2 (SiPc) with o-Carborane monool. The compound was characterized by mass spectrometry, UV-Vis, FT-IR, 1H and 11B Nuclear Magnetic Resonance Spectroscopy (NMR). Spectral, photophysical (fluorescence quantum yield) and photochemical (singlet oxygen (ΦΔ) and photodegradation quantum yield (Φd)) properties of the complex were reported in different solutions (Dimethyl sulfoxide (DMSO), Dimethylformamide (DMF) and Toluene). The results of spectral measurements showed that both SiPc and carborane cage can have potential to be used as sensitizers in photodynamic therapy (PDT) and boron neutron capture therapy (BNCT) by their singlet oxygen efficiencies (ΦΔ = 0.41, 0.39).

Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

NASA Astrophysics Data System (ADS)

Rose, Brendon Charles

This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic temperature. Additionally, we observe that the optical emission is highly coherent, predominately into a narrow zero phonon line that is stable in frequency. The combination of coherent optical and spin degrees of freedom has eluded all previous solid state defects.

Blind Quantum Signature with Blind Quantum Computation

NASA Astrophysics Data System (ADS)

Li, Wei; Shi, Ronghua; Guo, Ying

2017-04-01

Blind quantum computation allows a client without quantum abilities to interact with a quantum server to perform a unconditional secure computing protocol, while protecting client's privacy. Motivated by confidentiality of blind quantum computation, a blind quantum signature scheme is designed with laconic structure. Different from the traditional signature schemes, the signing and verifying operations are performed through measurement-based quantum computation. Inputs of blind quantum computation are securely controlled with multi-qubit entangled states. The unique signature of the transmitted message is generated by the signer without leaking information in imperfect channels. Whereas, the receiver can verify the validity of the signature using the quantum matching algorithm. The security is guaranteed by entanglement of quantum system for blind quantum computation. It provides a potential practical application for e-commerce in the cloud computing and first-generation quantum computation.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe

2015-12-28

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less

Coherent manipulation of a Si/SiGe-based singlet-triplet qubit

NASA Astrophysics Data System (ADS)

Gyure, Mark

2012-02-01

Electrically defined silicon-based qubits are expected to show improved quantum memory characteristics in comparison to GaAs-based devices due to reduced hyperfine interactions with nuclear spins. Silicon-based qubit devices have proved more challenging to build than their GaAs-based counterparts, but recently several groups have reported substantial progress in single-qubit initialization, measurement, and coherent operation. We report [1] coherent control of electron spins in two coupled quantum dots in an undoped Si/SiGe heterostructure, forming two levels of a singlet-triplet qubit. We measure a nuclei-induced T2^* of 360 ns, an increase over similar measurements in GaAs-based quantum dots by nearly two orders of magnitude. We also describe the results from detailed modeling of our materials and devices that show this value for T2^* is consistent with theoretical expectations for our estimated dot sizes and a natural abundance of ^29Si. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the United States Department of Defense or the U.S. Government. Approved for public release, distribution unlimited.[4pt] [1] B. M. Maune et al., ``Coherent Singlet-Triplet Oscillations in a Silicon-based Double Quantum Dot,'' accepted by Nature.

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Measurement-only verifiable blind quantum computing with quantum input verification

NASA Astrophysics Data System (ADS)

Morimae, Tomoyuki

2016-10-01

Verifiable blind quantum computing is a secure delegated quantum computing where a client with a limited quantum technology delegates her quantum computing to a server who has a universal quantum computer. The client's privacy is protected (blindness), and the correctness of the computation is verifiable by the client despite her limited quantum technology (verifiability). There are mainly two types of protocols for verifiable blind quantum computing: the protocol where the client has only to generate single-qubit states and the protocol where the client needs only the ability of single-qubit measurements. The latter is called the measurement-only verifiable blind quantum computing. If the input of the client's quantum computing is a quantum state, whose classical efficient description is not known to the client, there was no way for the measurement-only client to verify the correctness of the input. Here we introduce a protocol of measurement-only verifiable blind quantum computing where the correctness of the quantum input is also verifiable.

Final Report: Hot Carrier Collection in Thin Film Silicon with Tailored Nanocrystalline/Amorphous Structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, Reuben T.

This project developed, characterized, and perfected a new type of highly tunable nanocrystalline silicon (nc-Si:H) incorporating quantum confined silicon nanoparticles (SiNPs). A dual zone deposition process and system were developed and demonstrated. The depositions of SiNPs, the amorphous phase, and co-deposited material were characterized and optimized. Material design and interpretation of results were guided by new theoretical tools that examined both the electronic structure and carrier dynamics of this hybrid material. Heterojunction and p-i-n solar cells were demonstrated and characterized. Photo-thin-film-transistors allowed mobility to be studied as a function SiNP density in the films. Rapid (hot) transfer of carriers frommore » the amorphous matrix to the quantum confined SiNPs was observed and connected to reduced photo-degradation. The results carry quantum confined Si dots from a novelty to materials that can be harnessed for PV and optoelectronic applications. The growth process is broadly extendable with alternative amorphous matrices, novel layered structures, and alternative NPs easily accessible. The hot carrier effects hold the potential for third generation photovoltaics.« less

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Directed Atom-by-Atom Assembly of Dopants in Silicon.

PubMed

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Quantum analogue computing.

PubMed

Kendon, Vivien M; Nemoto, Kae; Munro, William J

2010-08-13

We briefly review what a quantum computer is, what it promises to do for us and why it is so hard to build one. Among the first applications anticipated to bear fruit is the quantum simulation of quantum systems. While most quantum computation is an extension of classical digital computation, quantum simulation differs fundamentally in how the data are encoded in the quantum computer. To perform a quantum simulation, the Hilbert space of the system to be simulated is mapped directly onto the Hilbert space of the (logical) qubits in the quantum computer. This type of direct correspondence is how data are encoded in a classical analogue computer. There is no binary encoding, and increasing precision becomes exponentially costly: an extra bit of precision doubles the size of the computer. This has important consequences for both the precision and error-correction requirements of quantum simulation, and significant open questions remain about its practicality. It also means that the quantum version of analogue computers, continuous-variable quantum computers, becomes an equally efficient architecture for quantum simulation. Lessons from past use of classical analogue computers can help us to build better quantum simulators in future.

Triple-server blind quantum computation using entanglement swapping

NASA Astrophysics Data System (ADS)

Li, Qin; Chan, Wai Hong; Wu, Chunhui; Wen, Zhonghua

2014-04-01

Blind quantum computation allows a client who does not have enough quantum resources or technologies to achieve quantum computation on a remote quantum server such that the client's input, output, and algorithm remain unknown to the server. Up to now, single- and double-server blind quantum computation have been considered. In this work, we propose a triple-server blind computation protocol where the client can delegate quantum computation to three quantum servers by the use of entanglement swapping. Furthermore, the three quantum servers can communicate with each other and the client is almost classical since one does not require any quantum computational power, quantum memory, and the ability to prepare any quantum states and only needs to be capable of getting access to quantum channels.

Investigation of gas surface interactions at self-assembled silicon surfaces acting as gas sensors

NASA Astrophysics Data System (ADS)

Narducci, Dario; Bernardinello, Patrizia; Oldani, Matteo

2003-05-01

This paper reports the results of an investigation aimed at using self-assembled monolayers to modify the supramolecular interactions between Si surfaces and gaseous molecules. The specific goal is that of employing molecularly imprinted silicon surfaces to develop a new class of chemical sensors capable to detect species with enhanced selectivity. Single-crystal p-type (0 0 1) silicon has been modified by grafting organic molecules onto its surface by using wet chemistry synthetic methods. Silicon has been activated toward nucleophilic attack by brominating its surface using a modified version of the purple etch, and aromatic fragments have been bonded through the formation of direct Si-C bonds onto it using Grignard reagents or lithium aryl species. Formation of self-assembled monolayers (SAMs) was verified by using vibrational spectroscopy. Porous metal-SAM-Si diodes have been successfully tested as resistive chemical sensors toward NO x, SO x, CO, NH 3 and methane. Current-voltage characteristics measured at different gas compositions showed that the mechanism of surface electron density modulation involves a modification of the junction barrier height upon gas adsorption. Quantum-mechanical simulations of the interaction mechanism were carried out using different computational methods to support such an interaction mechanism. The results obtained appear to open up new relevant applications of the SAM techniques in the area of gas sensing.

Dressed photon-orbital states in a quantum dot: Intervalley spin resonance

DOE PAGES

Scarlino, P.; Kawakami, E.; Jullien, T.; ...

2017-04-19

Because of the symmetry in silicon quantum wells, silicon quantum dots have an extra degree of freedom leading to a small energy splitting called the valley splitting. This degree of freedom has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understoodmore » through the use of dressed photon-orbital states, enabling a unified understanding of six resonance lines we observe in these experiments.« less

How to Build a Quantum Computer

NASA Astrophysics Data System (ADS)

Sanders, Barry C.

2017-11-01

Quantum computer technology is progressing rapidly with dozens of qubits and hundreds of quantum logic gates now possible. Although current quantum computer technology is distant from being able to solve computational problems beyond the reach of non-quantum computers, experiments have progressed well beyond simply demonstrating the requisite components. We can now operate small quantum logic processors with connected networks of qubits and quantum logic gates, which is a great stride towards functioning quantum computers. This book aims to be accessible to a broad audience with basic knowledge of computers, electronics and physics. The goal is to convey key notions relevant to building quantum computers and to present state-of-the-art quantum-computer research in various media such as trapped ions, superconducting circuits, photonics and beyond.

Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

PubMed

Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

2016-06-21

The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

Blind topological measurement-based quantum computation.

PubMed

Morimae, Tomoyuki; Fujii, Keisuke

2012-01-01

Blind quantum computation is a novel secure quantum-computing protocol that enables Alice, who does not have sufficient quantum technology at her disposal, to delegate her quantum computation to Bob, who has a fully fledged quantum computer, in such a way that Bob cannot learn anything about Alice's input, output and algorithm. A recent proof-of-principle experiment demonstrating blind quantum computation in an optical system has raised new challenges regarding the scalability of blind quantum computation in realistic noisy conditions. Here we show that fault-tolerant blind quantum computation is possible in a topologically protected manner using the Raussendorf-Harrington-Goyal scheme. The error threshold of our scheme is 4.3 × 10(-3), which is comparable to that (7.5 × 10(-3)) of non-blind topological quantum computation. As the error per gate of the order 10(-3) was already achieved in some experimental systems, our result implies that secure cloud quantum computation is within reach.

Blind topological measurement-based quantum computation

NASA Astrophysics Data System (ADS)

Morimae, Tomoyuki; Fujii, Keisuke

2012-09-01

Blind quantum computation is a novel secure quantum-computing protocol that enables Alice, who does not have sufficient quantum technology at her disposal, to delegate her quantum computation to Bob, who has a fully fledged quantum computer, in such a way that Bob cannot learn anything about Alice's input, output and algorithm. A recent proof-of-principle experiment demonstrating blind quantum computation in an optical system has raised new challenges regarding the scalability of blind quantum computation in realistic noisy conditions. Here we show that fault-tolerant blind quantum computation is possible in a topologically protected manner using the Raussendorf-Harrington-Goyal scheme. The error threshold of our scheme is 4.3×10-3, which is comparable to that (7.5×10-3) of non-blind topological quantum computation. As the error per gate of the order 10-3 was already achieved in some experimental systems, our result implies that secure cloud quantum computation is within reach.

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Orbital photogalvanic effects in quantum-confined structures

NASA Astrophysics Data System (ADS)

Karch, J.; Tarasenko, S. A.; Olbrich, P.; Schönberger, T.; Reitmaier, C.; Plohmann, D.; Kvon, Z. D.; Ganichev, S. D.

2010-09-01

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

Protease sensing using nontoxic silicon quantum dots.

PubMed

Cheng, Xiaoyu; McVey, Benjamin F P; Robinson, Andrew B; Longatte, Guillaume; O'Mara, Peter B; Tan, Vincent T G; Thordarson, Pall; Tilley, Richard D; Gaus, Katharina; Justin Gooding, John

2017-08-01

Herein is presented a proof-of-concept study of protease sensing that combines nontoxic silicon quantum dots (SiQDs) with Förster resonance energy transfer (FRET). The SiQDs serve as the donor and an organic dye as the acceptor. The dye is covalently attached to the SiQDs using a peptide linker. Enzymatic cleavage of the peptide leads to changes in FRET efficiency. The combination of interfacial design and optical imaging presented in this work opens opportunities for use of nontoxic SiQDs relevant to intracellular sensing and imaging. (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Biomolecular computers with multiple restriction enzymes

PubMed Central

Sakowski, Sebastian; Krasinski, Tadeusz; Waldmajer, Jacek; Sarnik, Joanna; Blasiak, Janusz; Poplawski, Tomasz

2017-01-01

Abstract The development of conventional, silicon-based computers has several limitations, including some related to the Heisenberg uncertainty principle and the von Neumann “bottleneck”. Biomolecular computers based on DNA and proteins are largely free of these disadvantages and, along with quantum computers, are reasonable alternatives to their conventional counterparts in some applications. The idea of a DNA computer proposed by Ehud Shapiro’s group at the Weizmann Institute of Science was developed using one restriction enzyme as hardware and DNA fragments (the transition molecules) as software and input/output signals. This computer represented a two-state two-symbol finite automaton that was subsequently extended by using two restriction enzymes. In this paper, we propose the idea of a multistate biomolecular computer with multiple commercially available restriction enzymes as hardware. Additionally, an algorithmic method for the construction of transition molecules in the DNA computer based on the use of multiple restriction enzymes is presented. We use this method to construct multistate, biomolecular, nondeterministic finite automata with four commercially available restriction enzymes as hardware. We also describe an experimental applicaton of this theoretical model to a biomolecular finite automaton made of four endonucleases. PMID:29064510

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

NASA Astrophysics Data System (ADS)

Song, Yang; Das Sarma, S.

2017-09-01

We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the perceived weak spin-orbit coupling (SOC) in Si, we find that our discovered relaxation mechanism, combined with the electron-phonon and interdonor interactions, drives the transitions in the two-electron states over a large range of donor coupling regimes. The scaling of the relaxation rate with interdonor exchange interaction J goes from J5 to J4 at the low to high temperature limits. Our analytical study draws on the symmetry analysis over combined band, donor envelope, and valley configurations. It uncovers naturally the dependence on the donor-alignment direction and triplet spin orientation, and especially on the dominant SOC source from donor impurities. While a magnetic field is not necessary for this relaxation, unlike in the single-donor spin relaxation, we discuss the crossover behavior with increasing Zeeman energy in order to facilitate comparison with experiments.

Demonstration of blind quantum computing.

PubMed

Barz, Stefanie; Kashefi, Elham; Broadbent, Anne; Fitzsimons, Joseph F; Zeilinger, Anton; Walther, Philip

2012-01-20

Quantum computers, besides offering substantial computational speedups, are also expected to preserve the privacy of a computation. We present an experimental demonstration of blind quantum computing in which the input, computation, and output all remain unknown to the computer. We exploit the conceptual framework of measurement-based quantum computation that enables a client to delegate a computation to a quantum server. Various blind delegated computations, including one- and two-qubit gates and the Deutsch and Grover quantum algorithms, are demonstrated. The client only needs to be able to prepare and transmit individual photonic qubits. Our demonstration is crucial for unconditionally secure quantum cloud computing and might become a key ingredient for real-life applications, especially when considering the challenges of making powerful quantum computers widely available.

Quantum Computation: Entangling with the Future

NASA Technical Reports Server (NTRS)

Jiang, Zhang

2017-01-01

Commercial applications of quantum computation have become viable due to the rapid progress of the field in the recent years. Efficient quantum algorithms are discovered to cope with the most challenging real-world problems that are too hard for classical computers. Manufactured quantum hardware has reached unprecedented precision and controllability, enabling fault-tolerant quantum computation. Here, I give a brief introduction on what principles in quantum mechanics promise its unparalleled computational power. I will discuss several important quantum algorithms that achieve exponential or polynomial speedup over any classical algorithm. Building a quantum computer is a daunting task, and I will talk about the criteria and various implementations of quantum computers. I conclude the talk with near-future commercial applications of a quantum computer.

Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon.

PubMed

Kim, D S; Hellman, O; Herriman, J; Smith, H L; Lin, J Y Y; Shulumba, N; Niedziela, J L; Li, C W; Abernathy, D L; Fultz, B

2018-02-27

Despite the widespread use of silicon in modern technology, its peculiar thermal expansion is not well understood. Adapting harmonic phonons to the specific volume at temperature, the quasiharmonic approximation, has become accepted for simulating the thermal expansion, but has given ambiguous interpretations for microscopic mechanisms. To test atomistic mechanisms, we performed inelastic neutron scattering experiments from 100 K to 1,500 K on a single crystal of silicon to measure the changes in phonon frequencies. Our state-of-the-art ab initio calculations, which fully account for phonon anharmonicity and nuclear quantum effects, reproduced the measured shifts of individual phonons with temperature, whereas quasiharmonic shifts were mostly of the wrong sign. Surprisingly, the accepted quasiharmonic model was found to predict the thermal expansion owing to a large cancellation of contributions from individual phonons.

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

PubMed

Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

2017-12-12

We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao; Qiu, Zhi-Jun

2010-10-01

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Understanding Molecular Conduction: Old Wine in a New Bottle?

NASA Astrophysics Data System (ADS)

Ghosh, Avik

2007-03-01

Molecules provide an opportunity to test our understanding of fundamental non-equilibrium transport processes, as well as explore new device possibilities. We have developed a unified approach to nanoscale conduction, coupling bandstructure and electrostatics of the channel and contacts with a quantum kinetic theory of current flow. This allows us to describe molecular conduction at various levels of detail, -- from quantum corrected compact models, to semi-empirical models for quick physical insights, and `first-principles' calculations of current-voltage (I-V) characteristics with no adjustable parameters. Using this suite of tools, we can quantitatively explain various experimental I-Vs, including complex reconstructed silicon substrates. We find that conduction in most molecules is contact dominated, and limited by fundamental electrostatic and thermodynamic restrictions quite analogous to those faced by the silicon industry, barring a few interesting exceptions. The distinction between molecular and silicon electronics must therefore be probed at a more fundamental level. Ultra-short molecules are unique in that they possess large Coulomb energies as well as anomalous vibronic couplings with current flow -- in other words, strong non-equilibrium electron-electron and electron-phonon correlations. These effects yield prominent experimental signatures, but require a completely different modeling approach -- in fact, popular approaches to include correlation typically do not work for non-equilibrium. Molecules exhibit rich physics, including the ability to function both as weakly interacting current conduits (quantum wires) as well as strongly correlated charge storage centers (quantum dots). Theoretical treatment of the intermediate coupling regime is particularly challenging, with a large `fine structure constant' for transport that negates orthodox theories of Coulomb Blockade and phonon-assisted tunneling. It is in this regime that the scientific and technological merits of molecular conductors may need to be explored. For instance, the tunable quantum coupling of current flow in silicon transistors with engineered molecular scatterers could lead to devices that operate on completely novel principles.

Undergraduate computational physics projects on quantum computing

NASA Astrophysics Data System (ADS)

Candela, D.

2015-08-01

Computational projects on quantum computing suitable for students in a junior-level quantum mechanics course are described. In these projects students write their own programs to simulate quantum computers. Knowledge is assumed of introductory quantum mechanics through the properties of spin 1/2. Initial, more easily programmed projects treat the basics of quantum computation, quantum gates, and Grover's quantum search algorithm. These are followed by more advanced projects to increase the number of qubits and implement Shor's quantum factoring algorithm. The projects can be run on a typical laptop or desktop computer, using most programming languages. Supplementing resources available elsewhere, the projects are presented here in a self-contained format especially suitable for a short computational module for physics students.

Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

PubMed

Xu, Kaikai

2013-09-20

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

The Fabrication of Arrays of Single Ions in Silicon via Ion Implantation

DTIC Science & Technology

2014-02-01

Requirement of optical nonlinearity for photon count- ing. Physical Review A, 65:042304, 2002. [108] Seth Lloyd and Samuel L. Braunstein. Quantum...defects in metals. Journal of Physics F: Metal Physics, 3(2):295, 1973. [361] George D. Watkins . Intrinsic defects in silicon. Materials Science in Semicon

Shell Filling and Magnetic Anisotropy In A Few Hole Silicon Metal-Oxide-Semiconductor Quantum Dot

NASA Astrophysics Data System (ADS)

Hamilton, Alex; Li., R.; Liles, S. D.; Yang, C. H.; Hudson, F. E.; Veldhorst, M. E.; Dzurak, A. S.

There is growing interest in hole spin states in group IV materials for quantum information applications. The near-absence of nuclear spins in group IV crystals promises long spin coherence times, while the strong spin-orbit interaction of the hole states provides fast electrical spin manipulation methods. However, the level-mixing and magnetic field dependence of the p-orbital hole states is non-trivial in nanostructures, and is not as well understood as for electron systems. In this work, we study the hole states in a gate-defined silicon metal-oxide-semiconductor quantum dot. Using an adjacent charge sensor, we monitor quantum dot orbital level spacing down to the very last hole, and find the standard two-dimensional (2D) circular dot shell filling structure. We can change the shell filling sequence by applying an out-of-plane magnetic field. However, when the field is applied in-plane, the shell filling is not changed. This magnetic field anisotropy suggests that the confined hole states are Ising-like.

Quantum simulation of the Hubbard model with dopant atoms in silicon

PubMed Central

Salfi, J.; Mol, J. A.; Rahman, R.; Klimeck, G.; Simmons, M. Y.; Hollenberg, L. C. L.; Rogge, S.

2016-01-01

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model. PMID:27094205

Atomic Source of Single Photons in the Telecom Band

NASA Astrophysics Data System (ADS)

Dibos, A. M.; Raha, M.; Phenicie, C. M.; Thompson, J. D.

2018-06-01

Single atoms and atomlike defects in solids are ideal quantum light sources and memories for quantum networks. However, most atomic transitions are in the ultraviolet-visible portion of the electromagnetic spectrum, where propagation losses in optical fibers are prohibitively large. Here, we observe for the first time the emission of single photons from a single Er3 + ion in a solid-state host, whose optical transition at 1.5 μ m is in the telecom band, allowing for low-loss propagation in optical fiber. This is enabled by integrating Er3 + ions with silicon nanophotonic structures, which results in an enhancement of the photon emission rate by a factor of more than 650. Dozens of distinct ions can be addressed in a single device, and the splitting of the lines in a magnetic field confirms that the optical transitions are coupled to the electronic spin of the Er3 + ions. These results are a significant step towards long-distance quantum networks and deterministic quantum logic for photons based on a scalable silicon nanophotonics architecture.

Blind topological measurement-based quantum computation

PubMed Central

Morimae, Tomoyuki; Fujii, Keisuke

2012-01-01

Blind quantum computation is a novel secure quantum-computing protocol that enables Alice, who does not have sufficient quantum technology at her disposal, to delegate her quantum computation to Bob, who has a fully fledged quantum computer, in such a way that Bob cannot learn anything about Alice's input, output and algorithm. A recent proof-of-principle experiment demonstrating blind quantum computation in an optical system has raised new challenges regarding the scalability of blind quantum computation in realistic noisy conditions. Here we show that fault-tolerant blind quantum computation is possible in a topologically protected manner using the Raussendorf–Harrington–Goyal scheme. The error threshold of our scheme is 4.3×10−3, which is comparable to that (7.5×10−3) of non-blind topological quantum computation. As the error per gate of the order 10−3 was already achieved in some experimental systems, our result implies that secure cloud quantum computation is within reach. PMID:22948818

Quantum computation for solving linear systems

NASA Astrophysics Data System (ADS)

Cao, Yudong

Quantum computation is a subject born out of the combination between physics and computer science. It studies how the laws of quantum mechanics can be exploited to perform computations much more efficiently than current computers (termed classical computers as oppose to quantum computers). The thesis starts by introducing ideas from quantum physics and theoretical computer science and based on these ideas, introducing the basic concepts in quantum computing. These introductory discussions are intended for non-specialists to obtain the essential knowledge needed for understanding the new results presented in the subsequent chapters. After introducing the basics of quantum computing, we focus on the recently proposed quantum algorithm for linear systems. The new results include i) special instances of quantum circuits that can be implemented using current experimental resources; ii) detailed quantum algorithms that are suitable for a broader class of linear systems. We show that for some particular problems the quantum algorithm is able to achieve exponential speedup over their classical counterparts.

Abstract quantum computing machines and quantum computational logics

NASA Astrophysics Data System (ADS)

Chiara, Maria Luisa Dalla; Giuntini, Roberto; Sergioli, Giuseppe; Leporini, Roberto

2016-06-01

Classical and quantum parallelism are deeply different, although it is sometimes claimed that quantum Turing machines are nothing but special examples of classical probabilistic machines. We introduce the concepts of deterministic state machine, classical probabilistic state machine and quantum state machine. On this basis, we discuss the question: To what extent can quantum state machines be simulated by classical probabilistic state machines? Each state machine is devoted to a single task determined by its program. Real computers, however, behave differently, being able to solve different kinds of problems. This capacity can be modeled, in the quantum case, by the mathematical notion of abstract quantum computing machine, whose different programs determine different quantum state machines. The computations of abstract quantum computing machines can be linguistically described by the formulas of a particular form of quantum logic, termed quantum computational logic.

Photophysical properties of blue – emitting silicon nanoparticles

PubMed Central

Portolés, Manuel J. Llansola; Nieto, Felipe Rodriguez; Soria, Delia B.; Amalvy, Javier I.; Peruzzo, Pablo J.; Mártire, Daniel O.; Kotler, Mónica; Holub, Oliver; Gonzalez, Mónica C.

2012-01-01

Silicon nanoparticles with strong blue photoluminescence were synthesized by electrochemical etching of silicon wafers and ultrasonically removed under N2 atmosphere in organic solvents to produce colloids. Thermal treatment leads to the formation of colloidal Si particles of 3 ± 1 nm diameter, which upon excitation with 340 – 380 nm light exhibited room temperature luminescence in the range from 400 to 500 nm. The emission and the one- and two-photon excitation spectra of the particles are not sensitive to surface functionalization with methyl 2-methylprop-2-enoate. However, the derivatized particles show higher emission quantum yields in air-saturated suspensions (44%) than the underivatized particles (27%), as well as higher stability of its dispersions. FTIR and XPS spectra indicate a significant surface oxidation of the particles. The Si:O:C ratio at the surface of the derivatized particles estimated from XPS is Si3O6(C5O2Hy)1, with y = 7 - 8. Vibronic spacing is observed in both the emission and excitation spectra. The information obtained from one-photon excitation experiments (emission and excitation spectra, photoluminescence quantum yields, luminescence decay lifetimes and anisotropy correlation lifetimes), as well as from two-photon excitation fluorescence correlation spectroscopy (brightness and diffusion coefficients) and TEM indicate that the blue-emitting particles are monodisperse and ball-shaped. Particle size clearly determines the emission and excitation spectral region, as expected from quantum confinement, but the presence and extent of Si-O species on the silicon networks seem crucial for determining the spectrum features and intensity of emission. The nanoparticles could hold great potential as quantum dots for applications as luminescence sensors in biology and environmental science. PMID:22866180

Surface chemistry and density distribution influence on visible luminescence of silicon quantum dots: an experimental and theoretical approach.

PubMed

Dutt, Ateet; Matsumoto, Yasuhiro; Santana-Rodríguez, G; Ramos, Estrella; Monroy, B Marel; Santoyo Salazar, J

2017-01-04

The impact of the surface reconstruction of the density distribution and photoluminescence of silicon quantum dots (QDs) embedded in a silicon oxide matrix (SiO x ) has been studied. Annealing treatments carried out on the as-deposited samples provoked the effusion of hydrogen species. Moreover, depending on the surrounding density and coalescence of QDs, they resulted in a change in the average size of the particles depending on the initial local environment. The shift in the luminescence spectra all over the visible region (blue, green and red) shows a strong dependence on the resultant change in the size and/or the passivation environment of QDs. Density functional theoretical (DFT) calculations support this fact and explain the possible electronic transitions (HOMO-LUMO gap) involved. Passivation in the presence of oxygen species lowers the band gap of Si 29 and Si 35 nanoclusters up to 1.7 eV, whereas, surface passivation in the environment of hydrogen species increases the band gap up to 4.4 eV. These results show a good agreement with the quantum confinement model described in this work and explain the shift in the luminescence all over the visible region. The results reported here offer vital insight into the mechanism of emission from silicon quantum dots which has been one of the most debated topics in the last two decades. QDs with multiple size distribution in different local environments (band gap) observed in this work could be used for the fabrication of light emission diodes (LEDs) or shift-conversion thin films in third generation efficient tandem solar cells for the maximum absorption of the solar spectrum in different wavelength regions.

Quantum computing with acceptor spins in silicon.

PubMed

Salfi, Joe; Tong, Mengyang; Rogge, Sven; Culcer, Dimitrie

2016-06-17

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.

Some foundational aspects of quantum computers and quantum robots.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benioff, P.; Physics

1998-01-01

This paper addresses foundational issues related to quantum computing. The need for a universally valid theory such as quantum mechanics to describe to some extent its own validation is noted. This includes quantum mechanical descriptions of systems that do theoretical calculations (i.e. quantum computers) and systems that perform experiments. Quantum robots interacting with an environment are a small first step in this direction. Quantum robots are described here as mobile quantum systems with on-board quantum computers that interact with environments. Included are discussions on the carrying out of tasks and the division of tasks into computation and action phases. Specificmore » models based on quantum Turing machines are described. Differences and similarities between quantum robots plus environments and quantum computers are discussed.« less

Quantum computers: Definition and implementations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perez-Delgado, Carlos A.; Kok, Pieter

The DiVincenzo criteria for implementing a quantum computer have been seminal in focusing both experimental and theoretical research in quantum-information processing. These criteria were formulated specifically for the circuit model of quantum computing. However, several new models for quantum computing (paradigms) have been proposed that do not seem to fit the criteria well. Therefore, the question is what are the general criteria for implementing quantum computers. To this end, a formal operational definition of a quantum computer is introduced. It is then shown that, according to this definition, a device is a quantum computer if it obeys the following criteria:more » Any quantum computer must consist of a quantum memory, with an additional structure that (1) facilitates a controlled quantum evolution of the quantum memory; (2) includes a method for information theoretic cooling of the memory; and (3) provides a readout mechanism for subsets of the quantum memory. The criteria are met when the device is scalable and operates fault tolerantly. We discuss various existing quantum computing paradigms and how they fit within this framework. Finally, we present a decision tree for selecting an avenue toward building a quantum computer. This is intended to help experimentalists determine the most natural paradigm given a particular physical implementation.« less

Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties

NASA Astrophysics Data System (ADS)

Garcia-Castello, Nuria; Illera, Sergio; Guerra, Roberto; Prades, Joan Daniel; Ossicini, Stefano; Cirera, Albert

2013-08-01

We study the details of electronic transport related to the atomistic structure of silicon quantum dots embedded in a silicon dioxide matrix using ab initio calculations of the density of states. Several structural and composition features of quantum dots (QDs), such as diameter and amorphization level, are studied and correlated with transport under transfer Hamiltonian formalism. The current is strongly dependent on the QD density of states and on the conduction gap, both dependent on the dot diameter. In particular, as size increases, the available states inside the QD increase, while the QD band gap decreases due to relaxation of quantum confinement. Both effects contribute to increasing the current with the dot size. Besides, valence band offset between the band edges of the QD and the silica, and conduction band offset in a minor grade, increases with the QD diameter up to the theoretical value corresponding to planar heterostructures, thus decreasing the tunneling transmission probability and hence the total current. We discuss the influence of these parameters on electron and hole transport, evidencing a correlation between the electron (hole) barrier value and the electron (hole) current, and obtaining a general enhancement of the electron (hole) transport for larger (smaller) QD. Finally, we show that crystalline and amorphous structures exhibit enhanced probability of hole and electron current, respectively.

Quantum simulator review

NASA Astrophysics Data System (ADS)

Bednar, Earl; Drager, Steven L.

2007-04-01

Quantum information processing's objective is to utilize revolutionary computing capability based on harnessing the paradigm shift offered by quantum computing to solve classically hard and computationally challenging problems. Some of our computationally challenging problems of interest include: the capability for rapid image processing, rapid optimization of logistics, protecting information, secure distributed simulation, and massively parallel computation. Currently, one important problem with quantum information processing is that the implementation of quantum computers is difficult to realize due to poor scalability and great presence of errors. Therefore, we have supported the development of Quantum eXpress and QuIDD Pro, two quantum computer simulators running on classical computers for the development and testing of new quantum algorithms and processes. This paper examines the different methods used by these two quantum computing simulators. It reviews both simulators, highlighting each simulators background, interface, and special features. It also demonstrates the implementation of current quantum algorithms on each simulator. It concludes with summary comments on both simulators.

Bandgap Tuning of Silicon Quantum Dots by Surface Functionalization with Conjugated Organic Groups.

PubMed

Zhou, Tianlei; Anderson, Ryan T; Li, Huashan; Bell, Jacob; Yang, Yongan; Gorman, Brian P; Pylypenko, Svitlana; Lusk, Mark T; Sellinger, Alan

2015-06-10

The quantum confinement and enhanced optical properties of silicon quantum dots (SiQDs) make them attractive as an inexpensive and nontoxic material for a variety of applications such as light emitting technologies (lighting, displays, sensors) and photovoltaics. However, experimental demonstration of these properties and practical application into optoelectronic devices have been limited as SiQDs are generally passivated with covalently bound insulating alkyl chains that limit charge transport. In this work, we show that strategically designed triphenylamine-based surface ligands covalently bonded to the SiQD surface using conjugated vinyl connectivity results in a 70 nm red-shifted photoluminescence relative to their decyl-capped control counterparts. This suggests that electron density from the SiQD is delocalized into the surface ligands to effectively create a larger hybrid QD with possible macroscopic charge transport properties.

Quantum walk computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kendon, Viv

2014-12-04

Quantum versions of random walks have diverse applications that are motivating experimental implementations as well as theoretical studies. Recent results showing quantum walks are “universal for quantum computation” relate to algorithms, to be run on quantum computers. We consider whether an experimental implementation of a quantum walk could provide useful computation before we have a universal quantum computer.

Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

PubMed

Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H; Priante, Davide; Alhamoud, Abdullah A; Wu, Feng; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki, Munir M; Ng, Tien Khee; Ooi, Boon S

2017-01-23

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm² (80 mA in 0.5 × 0.5 mm² device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm² of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

Quantum simulations with noisy quantum computers

NASA Astrophysics Data System (ADS)

Gambetta, Jay

Quantum computing is a new computational paradigm that is expected to lie beyond the standard model of computation. This implies a quantum computer can solve problems that can't be solved by a conventional computer with tractable overhead. To fully harness this power we need a universal fault-tolerant quantum computer. However the overhead in building such a machine is high and a full solution appears to be many years away. Nevertheless, we believe that we can build machines in the near term that cannot be emulated by a conventional computer. It is then interesting to ask what these can be used for. In this talk we will present our advances in simulating complex quantum systems with noisy quantum computers. We will show experimental implementations of this on some small quantum computers.

Bifurcation-based adiabatic quantum computation with a nonlinear oscillator network.

PubMed

Goto, Hayato

2016-02-22

The dynamics of nonlinear systems qualitatively change depending on their parameters, which is called bifurcation. A quantum-mechanical nonlinear oscillator can yield a quantum superposition of two oscillation states, known as a Schrödinger cat state, via quantum adiabatic evolution through its bifurcation point. Here we propose a quantum computer comprising such quantum nonlinear oscillators, instead of quantum bits, to solve hard combinatorial optimization problems. The nonlinear oscillator network finds optimal solutions via quantum adiabatic evolution, where nonlinear terms are increased slowly, in contrast to conventional adiabatic quantum computation or quantum annealing, where quantum fluctuation terms are decreased slowly. As a result of numerical simulations, it is concluded that quantum superposition and quantum fluctuation work effectively to find optimal solutions. It is also notable that the present computer is analogous to neural computers, which are also networks of nonlinear components. Thus, the present scheme will open new possibilities for quantum computation, nonlinear science, and artificial intelligence.

Bifurcation-based adiabatic quantum computation with a nonlinear oscillator network

NASA Astrophysics Data System (ADS)

Goto, Hayato

2016-02-01

The dynamics of nonlinear systems qualitatively change depending on their parameters, which is called bifurcation. A quantum-mechanical nonlinear oscillator can yield a quantum superposition of two oscillation states, known as a Schrödinger cat state, via quantum adiabatic evolution through its bifurcation point. Here we propose a quantum computer comprising such quantum nonlinear oscillators, instead of quantum bits, to solve hard combinatorial optimization problems. The nonlinear oscillator network finds optimal solutions via quantum adiabatic evolution, where nonlinear terms are increased slowly, in contrast to conventional adiabatic quantum computation or quantum annealing, where quantum fluctuation terms are decreased slowly. As a result of numerical simulations, it is concluded that quantum superposition and quantum fluctuation work effectively to find optimal solutions. It is also notable that the present computer is analogous to neural computers, which are also networks of nonlinear components. Thus, the present scheme will open new possibilities for quantum computation, nonlinear science, and artificial intelligence.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Computation and Dynamics: Classical and Quantum

NASA Astrophysics Data System (ADS)

Kisil, Vladimir V.

2010-05-01

We discuss classical and quantum computations in terms of corresponding Hamiltonian dynamics. This allows us to introduce quantum computations which involve parallel processing of both: the data and programme instructions. Using mixed quantum-classical dynamics we look for a full cost of computations on quantum computers with classical terminals.

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

1994-01-01

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Linear integrated optics in 3C silicon carbide.

PubMed

Martini, Francesco; Politi, Alberto

2017-05-15

The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.

Measurements of spin life time of an antimony-bound electron in silicon

NASA Astrophysics Data System (ADS)

Lu, T. M.; Bishop, N. C.; Tracy, L. A.; Blume-Kohout, R.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.

2013-03-01

We report our measurements of spin life time of an antimony-bound electron in silicon. The device is a double-top-gated silicon quantum dot with antimony atoms implanted near the quantum dot region. A donor charge transition is identified by observing a charge offset in the transport characteristics of the quantum dot. The tunnel rates on/off the donor are first characterized and a three-level pulse sequence is then used to measure the spin populations at different load-and-wait times in the presence of a fixed magnetic field. The spin life time is extracted from the exponential time dependence of the spin populations. A spin life time of 1.27 seconds is observed at B = 3.25 T. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evtukh, A. A., E-mail: dept_5@isp.kiev.ua; Kaganovich, E. B.; Manoilov, E. G.

2006-02-15

Electroluminescent structures that emit in the visible region of the spectrum and are based on porous silicon (por-Si) formed on the p-Si substrate electrolytically using an internal current source are fabricated. The photoluminescent and electroluminescent properties, as well as the current-and capacitance-voltage characteristics of the structures are studied. Electroluminescence is observed only if the forward bias voltage is applied to the structure; the electroluminescence mechanism is based on the injection and is related to the radiative recombination of electrons and holes in quantum-dimensional Si nanocrystals. The injection of holes is controlled by the condition of their accumulation in the space-chargemore » region of p-Si and by a comparatively low concentration of electronic states at the por-Si/p-Si interface. The charge transport in por-Si is caused by the direct tunneling of charge carriers between the quantum-mechanical levels, which is ensured by an appreciable number of quantum-dimensional Si nanocrystals. The leakage currents are low as a result of a small variance in the sizes of Si nanocrystals and the absence of comparatively large nanocrystals.« less

Quantum chemistry simulation on quantum computers: theories and experiments.

PubMed

Lu, Dawei; Xu, Boruo; Xu, Nanyang; Li, Zhaokai; Chen, Hongwei; Peng, Xinhua; Xu, Ruixue; Du, Jiangfeng

2012-07-14

It has been claimed that quantum computers can mimic quantum systems efficiently in the polynomial scale. Traditionally, those simulations are carried out numerically on classical computers, which are inevitably confronted with the exponential growth of required resources, with the increasing size of quantum systems. Quantum computers avoid this problem, and thus provide a possible solution for large quantum systems. In this paper, we first discuss the ideas of quantum simulation, the background of quantum simulators, their categories, and the development in both theories and experiments. We then present a brief introduction to quantum chemistry evaluated via classical computers followed by typical procedures of quantum simulation towards quantum chemistry. Reviewed are not only theoretical proposals but also proof-of-principle experimental implementations, via a small quantum computer, which include the evaluation of the static molecular eigenenergy and the simulation of chemical reaction dynamics. Although the experimental development is still behind the theory, we give prospects and suggestions for future experiments. We anticipate that in the near future quantum simulation will become a powerful tool for quantum chemistry over classical computations.

ASCR Workshop on Quantum Computing for Science

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aspuru-Guzik, Alan; Van Dam, Wim; Farhi, Edward

This report details the findings of the DOE ASCR Workshop on Quantum Computing for Science that was organized to assess the viability of quantum computing technologies to meet the computational requirements of the DOE’s science and energy mission, and to identify the potential impact of quantum technologies. The workshop was held on February 17-18, 2015, in Bethesda, MD, to solicit input from members of the quantum computing community. The workshop considered models of quantum computation and programming environments, physical science applications relevant to DOE's science mission as well as quantum simulation, and applied mathematics topics including potential quantum algorithms formore » linear algebra, graph theory, and machine learning. This report summarizes these perspectives into an outlook on the opportunities for quantum computing to impact problems relevant to the DOE’s mission as well as the additional research required to bring quantum computing to the point where it can have such impact.« less

Material platforms for spin-based photonic quantum technologies

NASA Astrophysics Data System (ADS)

Atatüre, Mete; Englund, Dirk; Vamivakas, Nick; Lee, Sang-Yun; Wrachtrup, Joerg

2018-05-01

A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light-matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light-matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light-matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors.

Flow Ambiguity: A Path Towards Classically Driven Blind Quantum Computation

NASA Astrophysics Data System (ADS)

Mantri, Atul; Demarie, Tommaso F.; Menicucci, Nicolas C.; Fitzsimons, Joseph F.

2017-07-01

Blind quantum computation protocols allow a user to delegate a computation to a remote quantum computer in such a way that the privacy of their computation is preserved, even from the device implementing the computation. To date, such protocols are only known for settings involving at least two quantum devices: either a user with some quantum capabilities and a remote quantum server or two or more entangled but noncommunicating servers. In this work, we take the first step towards the construction of a blind quantum computing protocol with a completely classical client and single quantum server. Specifically, we show how a classical client can exploit the ambiguity in the flow of information in measurement-based quantum computing to construct a protocol for hiding critical aspects of a computation delegated to a remote quantum computer. This ambiguity arises due to the fact that, for a fixed graph, there exist multiple choices of the input and output vertex sets that result in deterministic measurement patterns consistent with the same fixed total ordering of vertices. This allows a classical user, computing only measurement angles, to drive a measurement-based computation performed on a remote device while hiding critical aspects of the computation.

One-way quantum computing in superconducting circuits

NASA Astrophysics Data System (ADS)

Albarrán-Arriagada, F.; Alvarado Barrios, G.; Sanz, M.; Romero, G.; Lamata, L.; Retamal, J. C.; Solano, E.

2018-03-01

We propose a method for the implementation of one-way quantum computing in superconducting circuits. Measurement-based quantum computing is a universal quantum computation paradigm in which an initial cluster state provides the quantum resource, while the iteration of sequential measurements and local rotations encodes the quantum algorithm. Up to now, technical constraints have limited a scalable approach to this quantum computing alternative. The initial cluster state can be generated with available controlled-phase gates, while the quantum algorithm makes use of high-fidelity readout and coherent feedforward. With current technology, we estimate that quantum algorithms with above 20 qubits may be implemented in the path toward quantum supremacy. Moreover, we propose an alternative initial state with properties of maximal persistence and maximal connectedness, reducing the required resources of one-way quantum computing protocols.

Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

NASA Astrophysics Data System (ADS)

Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

2016-11-01

Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

Ab initio theory of spin-orbit coupling for quantum bits in diamond exhibiting dynamic Jahn-Teller effect

NASA Astrophysics Data System (ADS)

Gali, Adam; Thiering, Gergő

Dopants in solids are promising candidates for implementations of quantum bits for quantum computing. In particular, the high-spin negatively charged nitrogen-vacancy defect (NV) in diamond has become a leading contender in solid-state quantum information processing. The initialization and readout of the spin is based on the spin-selective decay of the photo-excited electron to the ground state which is mediated by spin-orbit coupling between excited states states and phonons. Generally, the spin-orbit coupling plays a crucial role in the optical spinpolarization and readout of NV quantum bit (qubit) and alike. Strong electron-phonon coupling in dynamic Jahn-Teller (DJT) systems can substantially influence the effective strength of spin-orbit coupling. Here we show by ab initio supercell density functional theory (DFT) calculations that the intrinsic spin-orbit coupling is strongly damped by DJT effect in the triplet excited state that has a consequence on the rate of non-radiative decay. This theory is applied to the ground state of silicon-vacancy (SiV) and germanium-vacancy (GeV) centers in their negatively charged state that can also act like qubits. We show that the intrinsic spin-orbit coupling in SiV and GeV centers is in the 100 GHz region, in contrast to the NV center of 10 GHz region. Our results provide deep insight in the nature of SiV and GeV qubits in diamond. EU FP7 DIADEMS project (Contract No. 611143).

Quantum Spin Glasses, Annealing and Computation

NASA Astrophysics Data System (ADS)

Chakrabarti, Bikas K.; Inoue, Jun-ichi; Tamura, Ryo; Tanaka, Shu

2017-05-01

List of tables; List of figures, Preface; 1. Introduction; Part I. Quantum Spin Glass, Annealing and Computation: 2. Classical spin models from ferromagnetic spin systems to spin glasses; 3. Simulated annealing; 4. Quantum spin glass; 5. Quantum dynamics; 6. Quantum annealing; Part II. Additional Notes: 7. Notes on adiabatic quantum computers; 8. Quantum information and quenching dynamics; 9. A brief historical note on the studies of quantum glass, annealing and computation.

Quantum-Enhanced Cyber Security: Experimental Computation on Quantum-Encrypted Data

DTIC Science & Technology

2017-03-02

AFRL-AFOSR-UK-TR-2017-0020 Quantum-Enhanced Cyber Security: Experimental Computation on Quantum-Encrypted Data Philip Walther UNIVERSITT WIEN Final...REPORT TYPE Final 3. DATES COVERED (From - To) 15 Oct 2015 to 31 Dec 2016 4. TITLE AND SUBTITLE Quantum-Enhanced Cyber Security: Experimental Computation...FORM SF 298 Final Report for FA9550-1-6-1-0004 Quantum-enhanced cyber security: Experimental quantum computation with quantum-encrypted data

Computing quantum discord is NP-complete

NASA Astrophysics Data System (ADS)

Huang, Yichen

2014-03-01

We study the computational complexity of quantum discord (a measure of quantum correlation beyond entanglement), and prove that computing quantum discord is NP-complete. Therefore, quantum discord is computationally intractable: the running time of any algorithm for computing quantum discord is believed to grow exponentially with the dimension of the Hilbert space so that computing quantum discord in a quantum system of moderate size is not possible in practice. As by-products, some entanglement measures (namely entanglement cost, entanglement of formation, relative entropy of entanglement, squashed entanglement, classical squashed entanglement, conditional entanglement of mutual information, and broadcast regularization of mutual information) and constrained Holevo capacity are NP-hard/NP-complete to compute. These complexity-theoretic results are directly applicable in common randomness distillation, quantum state merging, entanglement distillation, superdense coding, and quantum teleportation; they may offer significant insights into quantum information processing. Moreover, we prove the NP-completeness of two typical problems: linear optimization over classical states and detecting classical states in a convex set, providing evidence that working with classical states is generically computationally intractable.

Quantum dot lasers: From promise to high-performance devices

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

2009-03-01

Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

Quantum Computation

NASA Astrophysics Data System (ADS)

Aharonov, Dorit

In the last few years, theoretical study of quantum systems serving as computational devices has achieved tremendous progress. We now have strong theoretical evidence that quantum computers, if built, might be used as a dramatically powerful computational tool, capable of performing tasks which seem intractable for classical computers. This review is about to tell the story of theoretical quantum computation. I l out the developing topic of experimental realizations of the model, and neglected other closely related topics which are quantum information and quantum communication. As a result of narrowing the scope of this paper, I hope it has gained the benefit of being an almost self contained introduction to the exciting field of quantum computation. The review begins with background on theoretical computer science, Turing machines and Boolean circuits. In light of these models, I define quantum computers, and discuss the issue of universal quantum gates. Quantum algorithms, including Shor's factorization algorithm and Grover's algorithm for searching databases, are explained. I will devote much attention to understanding what the origins of the quantum computational power are, and what the limits of this power are. Finally, I describe the recent theoretical results which show that quantum computers maintain their complexity power even in the presence of noise, inaccuracies and finite precision. This question cannot be separated from that of quantum complexity because any realistic model will inevitably be subjected to such inaccuracies. I tried to put all results in their context, asking what the implications to other issues in computer science and physics are. In the end of this review, I make these connections explicit by discussing the possible implications of quantum computation on fundamental physical questions such as the transition from quantum to classical physics.

Quantum Computing: Selected Internet Resources for Librarians, Researchers, and the Casually Curious

ERIC Educational Resources Information Center

Cirasella, Jill

2009-01-01

This article presents an annotated selection of the most important and informative Internet resources for learning about quantum computing, finding quantum computing literature, and tracking quantum computing news. All of the quantum computing resources described in this article are freely available, English-language web sites that fall into one…

Digital Control of Exchange Interaction in a Spin-based Silicon Quantum Computer

DTIC Science & Technology

2013-05-19

GRANT NUMBER 5a. CONTRACT NUMBER W911NF-09-1-0498 611102 Form Approved OMB NO. 0704-0188 56447-PH-QC.6 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10...graduating undergraduates funded by a DoD funded Center of Excellence grant for Education, Research and Engineering: The number of undergraduates funded by...5424 – 5431, 2004.  [C20]  D. A. Grützmacher, T. O. Sedgwick, A. Powell, M. Tejwani, S. S.  lyer,  J. Cotte, and   F.  Cardone ,  “Ge segregation  in SiGe

Contextuality as a Resource for Models of Quantum Computation with Qubits

NASA Astrophysics Data System (ADS)

Bermejo-Vega, Juan; Delfosse, Nicolas; Browne, Dan E.; Okay, Cihan; Raussendorf, Robert

2017-09-01

A central question in quantum computation is to identify the resources that are responsible for quantum speed-up. Quantum contextuality has been recently shown to be a resource for quantum computation with magic states for odd-prime dimensional qudits and two-dimensional systems with real wave functions. The phenomenon of state-independent contextuality poses a priori an obstruction to characterizing the case of regular qubits, the fundamental building block of quantum computation. Here, we establish contextuality of magic states as a necessary resource for a large class of quantum computation schemes on qubits. We illustrate our result with a concrete scheme related to measurement-based quantum computation.

Bifurcation-based adiabatic quantum computation with a nonlinear oscillator network

PubMed Central

Goto, Hayato

2016-01-01

The dynamics of nonlinear systems qualitatively change depending on their parameters, which is called bifurcation. A quantum-mechanical nonlinear oscillator can yield a quantum superposition of two oscillation states, known as a Schrödinger cat state, via quantum adiabatic evolution through its bifurcation point. Here we propose a quantum computer comprising such quantum nonlinear oscillators, instead of quantum bits, to solve hard combinatorial optimization problems. The nonlinear oscillator network finds optimal solutions via quantum adiabatic evolution, where nonlinear terms are increased slowly, in contrast to conventional adiabatic quantum computation or quantum annealing, where quantum fluctuation terms are decreased slowly. As a result of numerical simulations, it is concluded that quantum superposition and quantum fluctuation work effectively to find optimal solutions. It is also notable that the present computer is analogous to neural computers, which are also networks of nonlinear components. Thus, the present scheme will open new possibilities for quantum computation, nonlinear science, and artificial intelligence. PMID:26899997

Measurement of the noise power spectrum in digital x-ray detectors

NASA Astrophysics Data System (ADS)

Aufrichtig, Richard; Su, Yu; Cheng, Yu; Granfors, Paul R.

2001-06-01

The noise power spectrum, NPS, is a key imaging property of a detector and one of the principle quantities needed to compute the detective quantum efficiency. NPS is measured by computing the Fourier transform of flat field images. Different measurement methods are investigated and evaluated with images obtained from an amorphous silicon flat panel x-ray imaging detector. First, the influence of fixed pattern structures is minimized by appropriate background corrections. For a given data set the effect of using different types of windowing functions is studied. Also different window sizes and amounts of overlap between windows are evaluated and compared to theoretical predictions. Results indicate that measurement error is minimized when applying overlapping Hanning windows on the raw data. Finally it is shown that radial averaging is a useful method of reducing the two-dimensional noise power spectrum to one dimension.

Architectures and Applications for Scalable Quantum Information Systems

DTIC Science & Technology

2007-01-01

quantum computation models, such as adiabatic quantum computing , can be converted to quantum circuits. Therefore, in our design flow’s first phase...vol. 26, no. 5, pp. 1484–1509, 1997. [19] A. Childs, E. Farhi, and J. Preskill, “Robustness of adiabatic quantum computation ,” Phys. Rev. A, vol. 65...magnetic resonance computer with three quantum bits that simulates an adiabatic quantum optimization algorithm. Adiabatic

Hybrid quantum computing with ancillas

NASA Astrophysics Data System (ADS)

Proctor, Timothy J.; Kendon, Viv

2016-10-01

In the quest to build a practical quantum computer, it is important to use efficient schemes for enacting the elementary quantum operations from which quantum computer programs are constructed. The opposing requirements of well-protected quantum data and fast quantum operations must be balanced to maintain the integrity of the quantum information throughout the computation. One important approach to quantum operations is to use an extra quantum system - an ancilla - to interact with the quantum data register. Ancillas can mediate interactions between separated quantum registers, and by using fresh ancillas for each quantum operation, data integrity can be preserved for longer. This review provides an overview of the basic concepts of the gate model quantum computer architecture, including the different possible forms of information encodings - from base two up to continuous variables - and a more detailed description of how the main types of ancilla-mediated quantum operations provide efficient quantum gates.

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

QCE: A Simulator for Quantum Computer Hardware

NASA Astrophysics Data System (ADS)

Michielsen, Kristel; de Raedt, Hans

2003-09-01

The Quantum Computer Emulator (QCE) described in this paper consists of a simulator of a generic, general purpose quantum computer and a graphical user interface. The latter is used to control the simulator, to define the hardware of the quantum computer and to debug and execute quantum algorithms. QCE runs in a Windows 98/NT/2000/ME/XP environment. It can be used to validate designs of physically realizable quantum processors and as an interactive educational tool to learn about quantum computers and quantum algorithms. A detailed exposition is given of the implementation of the CNOT and the Toffoli gate, the quantum Fourier transform, Grover's database search algorithm, an order finding algorithm, Shor's algorithm, a three-input adder and a number partitioning algorithm. We also review the results of simulations of an NMR-like quantum computer.

Verification for measurement-only blind quantum computing

NASA Astrophysics Data System (ADS)

Morimae, Tomoyuki

2014-06-01

Blind quantum computing is a new secure quantum computing protocol where a client who does not have any sophisticated quantum technology can delegate her quantum computing to a server without leaking any privacy. It is known that a client who has only a measurement device can perform blind quantum computing [T. Morimae and K. Fujii, Phys. Rev. A 87, 050301(R) (2013), 10.1103/PhysRevA.87.050301]. It has been an open problem whether the protocol can enjoy the verification, i.e., the ability of the client to check the correctness of the computing. In this paper, we propose a protocol of verification for the measurement-only blind quantum computing.

High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits

PubMed Central

Pernice, W.H.P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G.N.; Sergienko, A.V.; Tang, H.X.

2012-01-01

Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. PMID:23271658

A single-atom quantum memory in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freer, Solomon; Simmons, Stephanie; Laucht, Arne

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28Si. The fidelity of the memory process ismore » characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.« less

A single-atom quantum memory in silicon

DOE PAGES

Freer, Solomon; Simmons, Stephanie; Laucht, Arne; ...

2017-03-20

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28Si. The fidelity of the memory process ismore » characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.« less

Experimental realization of Bloch oscillations in a parity-time synthetic silicon photonic lattice

PubMed Central

Xu, Ye-Long; Fegadolli, William S.; Gan, Lin; Lu, Ming-Hui; Liu, Xiao-Ping; Li, Zhi-Yuan; Scherer, Axel; Chen, Yan-Feng

2016-01-01

As an important electron transportation phenomenon, Bloch oscillations have been extensively studied in condensed matter. Due to the similarity in wave properties between electrons and other quantum particles, Bloch oscillations have been observed in atom lattices, photonic lattices, and so on. One of the many distinct advantages for choosing these systems over the regular electronic systems is the versatility in engineering artificial potentials. Here by utilizing dissipative elements in a CMOS-compatible photonic platform to create a periodic complex potential and by exploiting the emerging concept of parity-time synthetic photonics, we experimentally realize spatial Bloch oscillations in a non-Hermitian photonic system on a chip level. Our demonstration may have significant impact in the field of quantum simulation by following the recent trend of moving complicated table-top quantum optics experiments onto the fully integrated CMOS-compatible silicon platform. PMID:27095533

Experimental demonstration of blind quantum computing

NASA Astrophysics Data System (ADS)

Barz, Stefanie; Kashefi, Elham; Broadbent, Anne; Fitzsimons, Joe; Zeilinger, Anton; Walther, Philip

2012-02-01

Quantum computers are among the most promising applications of quantum-enhanced technologies. Quantum effects such as superposition and entanglement enable computational speed-ups that are unattainable using classical computers. The challenges in realising quantum computers suggest that in the near future, only a few facilities worldwide will be capable of operating such devices. In order to exploit these computers, users would seemingly have to give up their privacy. It was recently shown that this is not the case and that, via the universal blind quantum computation protocol, quantum mechanics provides a way to guarantee that the user's data remain private. Here, we demonstrate the first experimental version of this protocol using polarisation-entangled photonic qubits. We demonstrate various blind one- and two-qubit gate operations as well as blind versions of the Deutsch's and Grover's algorithms. When the technology to build quantum computers becomes available, this will become an important privacy-preserving feature of quantum information processing.

Single-server blind quantum computation with quantum circuit model

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Method for enhancing the solubility of boron and indium in silicon

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2002-01-01

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Contextuality supplies the 'magic' for quantum computation.

PubMed

Howard, Mark; Wallman, Joel; Veitch, Victor; Emerson, Joseph

2014-06-19

Quantum computers promise dramatic advantages over their classical counterparts, but the source of the power in quantum computing has remained elusive. Here we prove a remarkable equivalence between the onset of contextuality and the possibility of universal quantum computation via 'magic state' distillation, which is the leading model for experimentally realizing a fault-tolerant quantum computer. This is a conceptually satisfying link, because contextuality, which precludes a simple 'hidden variable' model of quantum mechanics, provides one of the fundamental characterizations of uniquely quantum phenomena. Furthermore, this connection suggests a unifying paradigm for the resources of quantum information: the non-locality of quantum theory is a particular kind of contextuality, and non-locality is already known to be a critical resource for achieving advantages with quantum communication. In addition to clarifying these fundamental issues, this work advances the resource framework for quantum computation, which has a number of practical applications, such as characterizing the efficiency and trade-offs between distinct theoretical and experimental schemes for achieving robust quantum computation, and putting bounds on the overhead cost for the classical simulation of quantum algorithms.

Exploiting Locality in Quantum Computation for Quantum Chemistry.

PubMed

McClean, Jarrod R; Babbush, Ryan; Love, Peter J; Aspuru-Guzik, Alán

2014-12-18

Accurate prediction of chemical and material properties from first-principles quantum chemistry is a challenging task on traditional computers. Recent developments in quantum computation offer a route toward highly accurate solutions with polynomial cost; however, this solution still carries a large overhead. In this Perspective, we aim to bring together known results about the locality of physical interactions from quantum chemistry with ideas from quantum computation. We show that the utilization of spatial locality combined with the Bravyi-Kitaev transformation offers an improvement in the scaling of known quantum algorithms for quantum chemistry and provides numerical examples to help illustrate this point. We combine these developments to improve the outlook for the future of quantum chemistry on quantum computers.

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

PubMed

Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

2014-12-14

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

Computational Multiqubit Tunnelling in Programmable Quantum Annealers

DTIC Science & Technology

2016-08-25

ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

Complexity Bounds for Quantum Computation

DTIC Science & Technology

2007-06-22

Programs Trustees of Boston University Boston, MA 02215 - Complexity Bounds for Quantum Computation REPORT DOCUMENTATION PAGE 18. SECURITY CLASSIFICATION...Complexity Bounds for Quantum Comp[utation Report Title ABSTRACT This project focused on upper and lower bounds for quantum computability using constant...classical computation models, particularly emphasizing new examples of where quantum circuits are more powerful than their classical counterparts. A second

Application of Blind Quantum Computation to Two-Party Quantum Computation

NASA Astrophysics Data System (ADS)

Sun, Zhiyuan; Li, Qin; Yu, Fang; Chan, Wai Hong

2018-06-01

Blind quantum computation (BQC) allows a client who has only limited quantum power to achieve quantum computation with the help of a remote quantum server and still keep the client's input, output, and algorithm private. Recently, Kashefi and Wallden extended BQC to achieve two-party quantum computation which allows two parties Alice and Bob to perform a joint unitary transform upon their inputs. However, in their protocol Alice has to prepare rotated single qubits and perform Pauli operations, and Bob needs to have a powerful quantum computer. In this work, we also utilize the idea of BQC to put forward an improved two-party quantum computation protocol in which the operations of both Alice and Bob are simplified since Alice only needs to apply Pauli operations and Bob is just required to prepare and encrypt his input qubits.

Application of Blind Quantum Computation to Two-Party Quantum Computation

NASA Astrophysics Data System (ADS)

Sun, Zhiyuan; Li, Qin; Yu, Fang; Chan, Wai Hong

2018-03-01

Blind quantum computation (BQC) allows a client who has only limited quantum power to achieve quantum computation with the help of a remote quantum server and still keep the client's input, output, and algorithm private. Recently, Kashefi and Wallden extended BQC to achieve two-party quantum computation which allows two parties Alice and Bob to perform a joint unitary transform upon their inputs. However, in their protocol Alice has to prepare rotated single qubits and perform Pauli operations, and Bob needs to have a powerful quantum computer. In this work, we also utilize the idea of BQC to put forward an improved two-party quantum computation protocol in which the operations of both Alice and Bob are simplified since Alice only needs to apply Pauli operations and Bob is just required to prepare and encrypt his input qubits.

Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor.

PubMed

Aravind, K; Lin, M C; Ho, I L; Wu, C S; Kuo, Watson; Kuan, C H; Chang-Liao, K S; Chen, C D

2012-03-01

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T-2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.

Decoherence in adiabatic quantum computation

NASA Astrophysics Data System (ADS)

Albash, Tameem; Lidar, Daniel A.

2015-06-01

Recent experiments with increasingly larger numbers of qubits have sparked renewed interest in adiabatic quantum computation, and in particular quantum annealing. A central question that is repeatedly asked is whether quantum features of the evolution can survive over the long time scales used for quantum annealing relative to standard measures of the decoherence time. We reconsider the role of decoherence in adiabatic quantum computation and quantum annealing using the adiabatic quantum master-equation formalism. We restrict ourselves to the weak-coupling and singular-coupling limits, which correspond to decoherence in the energy eigenbasis and in the computational basis, respectively. We demonstrate that decoherence in the instantaneous energy eigenbasis does not necessarily detrimentally affect adiabatic quantum computation, and in particular that a short single-qubit T2 time need not imply adverse consequences for the success of the quantum adiabatic algorithm. We further demonstrate that boundary cancellation methods, designed to improve the fidelity of adiabatic quantum computing in the closed-system setting, remain beneficial in the open-system setting. To address the high computational cost of master-equation simulations, we also demonstrate that a quantum Monte Carlo algorithm that explicitly accounts for a thermal bosonic bath can be used to interpolate between classical and quantum annealing. Our study highlights and clarifies the significantly different role played by decoherence in the adiabatic and circuit models of quantum computing.

Spin-based quantum computation in multielectron quantum dots

NASA Astrophysics Data System (ADS)

Hu, Xuedong; Das Sarma, S.

2001-10-01

In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid-state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single-spin system unless special conditions are satisfied. Our work compellingly demonstrates that a delicate synergy between theory and experiment (between software and hardware) is essential for constructing a quantum computer.

Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

NASA Astrophysics Data System (ADS)

Ghosh, Arindam

Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry breaking remains unknown, we believe this indicates a new many-body electronic phase in two-dimensionally doped silicon and germanium with a half-filled impurity band. We acknowledge financial support from Department of Science and Technology, Government of India, and Australia-India Strategic Research Fund (AISRF).

Elucidating reaction mechanisms on quantum computers.

PubMed

Reiher, Markus; Wiebe, Nathan; Svore, Krysta M; Wecker, Dave; Troyer, Matthias

2017-07-18

With rapid recent advances in quantum technology, we are close to the threshold of quantum devices whose computational powers can exceed those of classical supercomputers. Here, we show that a quantum computer can be used to elucidate reaction mechanisms in complex chemical systems, using the open problem of biological nitrogen fixation in nitrogenase as an example. We discuss how quantum computers can augment classical computer simulations used to probe these reaction mechanisms, to significantly increase their accuracy and enable hitherto intractable simulations. Our resource estimates show that, even when taking into account the substantial overhead of quantum error correction, and the need to compile into discrete gate sets, the necessary computations can be performed in reasonable time on small quantum computers. Our results demonstrate that quantum computers will be able to tackle important problems in chemistry without requiring exorbitant resources.

Elucidating reaction mechanisms on quantum computers

PubMed Central

Reiher, Markus; Wiebe, Nathan; Svore, Krysta M.; Wecker, Dave; Troyer, Matthias

2017-01-01

With rapid recent advances in quantum technology, we are close to the threshold of quantum devices whose computational powers can exceed those of classical supercomputers. Here, we show that a quantum computer can be used to elucidate reaction mechanisms in complex chemical systems, using the open problem of biological nitrogen fixation in nitrogenase as an example. We discuss how quantum computers can augment classical computer simulations used to probe these reaction mechanisms, to significantly increase their accuracy and enable hitherto intractable simulations. Our resource estimates show that, even when taking into account the substantial overhead of quantum error correction, and the need to compile into discrete gate sets, the necessary computations can be performed in reasonable time on small quantum computers. Our results demonstrate that quantum computers will be able to tackle important problems in chemistry without requiring exorbitant resources. PMID:28674011

Elucidating reaction mechanisms on quantum computers

NASA Astrophysics Data System (ADS)

Reiher, Markus; Wiebe, Nathan; Svore, Krysta M.; Wecker, Dave; Troyer, Matthias

2017-07-01

With rapid recent advances in quantum technology, we are close to the threshold of quantum devices whose computational powers can exceed those of classical supercomputers. Here, we show that a quantum computer can be used to elucidate reaction mechanisms in complex chemical systems, using the open problem of biological nitrogen fixation in nitrogenase as an example. We discuss how quantum computers can augment classical computer simulations used to probe these reaction mechanisms, to significantly increase their accuracy and enable hitherto intractable simulations. Our resource estimates show that, even when taking into account the substantial overhead of quantum error correction, and the need to compile into discrete gate sets, the necessary computations can be performed in reasonable time on small quantum computers. Our results demonstrate that quantum computers will be able to tackle important problems in chemistry without requiring exorbitant resources.

Software Systems for High-performance Quantum Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S; Britt, Keith A

Quantum computing promises new opportunities for solving hard computational problems, but harnessing this novelty requires breakthrough concepts in the design, operation, and application of computing systems. We define some of the challenges facing the development of quantum computing systems as well as software-based approaches that can be used to overcome these challenges. Following a brief overview of the state of the art, we present models for the quantum programming and execution models, the development of architectures for hybrid high-performance computing systems, and the realization of software stacks for quantum networking. This leads to a discussion of the role that conventionalmore » computing plays in the quantum paradigm and how some of the current challenges for exascale computing overlap with those facing quantum computing.« less

Laterally stacked Schottky diodes for infrared sensor applications

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor)

1991-01-01

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Homomorphic encryption experiments on IBM's cloud quantum computing platform

NASA Astrophysics Data System (ADS)

Huang, He-Liang; Zhao, You-Wei; Li, Tan; Li, Feng-Guang; Du, Yu-Tao; Fu, Xiang-Qun; Zhang, Shuo; Wang, Xiang; Bao, Wan-Su

2017-02-01

Quantum computing has undergone rapid development in recent years. Owing to limitations on scalability, personal quantum computers still seem slightly unrealistic in the near future. The first practical quantum computer for ordinary users is likely to be on the cloud. However, the adoption of cloud computing is possible only if security is ensured. Homomorphic encryption is a cryptographic protocol that allows computation to be performed on encrypted data without decrypting them, so it is well suited to cloud computing. Here, we first applied homomorphic encryption on IBM's cloud quantum computer platform. In our experiments, we successfully implemented a quantum algorithm for linear equations while protecting our privacy. This demonstration opens a feasible path to the next stage of development of cloud quantum information technology.

A cross-disciplinary introduction to quantum annealing-based algorithms

NASA Astrophysics Data System (ADS)

Venegas-Andraca, Salvador E.; Cruz-Santos, William; McGeoch, Catherine; Lanzagorta, Marco

2018-04-01

A central goal in quantum computing is the development of quantum hardware and quantum algorithms in order to analyse challenging scientific and engineering problems. Research in quantum computation involves contributions from both physics and computer science; hence this article presents a concise introduction to basic concepts from both fields that are used in annealing-based quantum computation, an alternative to the more familiar quantum gate model. We introduce some concepts from computer science required to define difficult computational problems and to realise the potential relevance of quantum algorithms to find novel solutions to those problems. We introduce the structure of quantum annealing-based algorithms as well as two examples of this kind of algorithms for solving instances of the max-SAT and Minimum Multicut problems. An overview of the quantum annealing systems manufactured by D-Wave Systems is also presented.

Some Thoughts Regarding Practical Quantum Computing

NASA Astrophysics Data System (ADS)

Ghoshal, Debabrata; Gomez, Richard; Lanzagorta, Marco; Uhlmann, Jeffrey

2006-03-01

Quantum computing has become an important area of research in computer science because of its potential to provide more efficient algorithmic solutions to certain problems than are possible with classical computing. The ability of performing parallel operations over an exponentially large computational space has proved to be the main advantage of the quantum computing model. In this regard, we are particularly interested in the potential applications of quantum computers to enhance real software systems of interest to the defense, industrial, scientific and financial communities. However, while much has been written in popular and scientific literature about the benefits of the quantum computational model, several of the problems associated to the practical implementation of real-life complex software systems in quantum computers are often ignored. In this presentation we will argue that practical quantum computation is not as straightforward as commonly advertised, even if the technological problems associated to the manufacturing and engineering of large-scale quantum registers were solved overnight. We will discuss some of the frequently overlooked difficulties that plague quantum computing in the areas of memories, I/O, addressing schemes, compilers, oracles, approximate information copying, logical debugging, error correction and fault-tolerant computing protocols.

Ultralow-Threshold Electrically Pumped Quantum-Dot Photonic-Crystal Nanocavity Laser

DTIC Science & Technology

2011-05-01

we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p–i–n junction formed by ion implantation...330 nm layer of silicon nitride was then deposited on the sample using plasma-enhanced chemical vapour deposition (PECVD) to serve as a mask for ion

Graphene-based quantum Hall resistance standards grown by chemical vapor deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, Rebeca; Lafont, Fabien; Kazazis, Dimitris; Michon, Adrien; Couturaud, Olivier; Consejo, Christophe; Jouault, Benoit; Poirier, Wilfrid; Schopfer, Felicien

2015-03-01

Replace GaAs-based quantum Hall resistance standards (GaAs-QHRS) by a more convenient one, based on graphene (Gr-QHRS), is an ongoing goal in metrology. The new Gr-QHRS are expected to work in less demanding experimental conditions than GaAs ones. It will open the way to a broad dissemination of quantum standards, potentially towards industrial end-users, and it will support the implementation of a new International System of Units based on fixed fundamental constants. Here, we present accurate quantum Hall resistance measurements in large graphene Hall bars, grown by the hybrid scalable technique of propane/hydrogen chemical vapor deposition (CVD) on silicon carbide (SiC). This new Gr-QHRS shows a relative accuracy of 1 ×10-9 of the Hall resistance under the lowest magnetic field ever achieved in graphene. These experimental conditions surpass those of the most wildely used GaAs-QHRS. These results confirm the promises of graphene for resistance metrology applications and emphasizes the quality of the graphene produced by the CVD on SiC for applications as demanding as the resistance metrology.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

DOE PAGES

Stolle, Carl Jackson; Lu, Xiaotang; Yu, Yixuan; ...

2017-08-01

In this study, auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimesmore » increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E g. Beyond a critical length, the CM quantum yield decreases. Finally, nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.« less

Sideband pump-probe technique resolves nonlinear modulation response of PbS/CdS quantum dots on a silicon nitride waveguide

NASA Astrophysics Data System (ADS)

Kolarczik, Mirco; Ulbrich, Christian; Geiregat, Pieter; Zhu, Yunpeng; Sagar, Laxmi Kishore; Singh, Akshay; Herzog, Bastian; Achtstein, Alexander W.; Li, Xiaoqin; van Thourhout, Dries; Hens, Zeger; Owschimikow, Nina; Woggon, Ulrike

2018-01-01

For possible applications of colloidal nanocrystals in optoelectronics and nanophotonics, it is of high interest to study their response at low excitation intensity with high repetition rates, as switching energies in the pJ/bit to sub-pJ/bit range are targeted. We develop a sensitive pump-probe method to study the carrier dynamics in colloidal PbS/CdS quantum dots deposited on a silicon nitride waveguide after excitation by laser pulses with an average energy of few pJ/pulse. We combine an amplitude modulation of the pump pulse with phase-sensitive heterodyne detection. This approach permits to use co-linearly propagating co-polarized pulses. The method allows resolving transmission changes of the order of 10-5 and phase changes of arcseconds. We find a modulation on a sub-nanosecond time scale caused by Auger processes and biexciton decay in the quantum dots. With ground state lifetimes exceeding 1 μs, these processes become important for possible realizations of opto-electronic switching and modulation based on colloidal quantum dots emitting in the telecommunication wavelength regime.

Non-unitary probabilistic quantum computing circuit and method

NASA Technical Reports Server (NTRS)

Williams, Colin P. (Inventor); Gingrich, Robert M. (Inventor)

2009-01-01

A quantum circuit performing quantum computation in a quantum computer. A chosen transformation of an initial n-qubit state is probabilistically obtained. The circuit comprises a unitary quantum operator obtained from a non-unitary quantum operator, operating on an n-qubit state and an ancilla state. When operation on the ancilla state provides a success condition, computation is stopped. When operation on the ancilla state provides a failure condition, computation is performed again on the ancilla state and the n-qubit state obtained in the previous computation, until a success condition is obtained.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.

Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching timemore » increase from 45 to 75 mintunes.« less

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method

NASA Astrophysics Data System (ADS)

Tachibana, Tomihisa; Tanahashi, Katsuto; Mochizuki, Toshimitsu; Shirasawa, Katsuhiko; Takato, Hidetaka

2018-04-01

Bifacial interdigitated-back-contact (IBC) silicon solar cells with a high bifaciality of 0.91 were fabricated. Screen printing and firing technology were used to reduce the production cost. For the first time, the relationship between the rear side structure and carrier collection probability was evaluated using internal quantum efficiency (IQE) mapping. The measurement results showed that the screen-printed electrode and back surface field (BSF) area led to low IQE. The low carrier collection probability by BSF area can be explained by electrical shading effects. Thus, it is clear that the IQE mapping system is useful to evaluate the IBC cell.

Valley-orbit splitting in doped nanocrystalline silicon: k•p calculations

NASA Astrophysics Data System (ADS)

Belyakov, Vladimir A.; Burdov, Vladimir A.

2007-07-01

The valley-orbit splitting in silicon quantum dots with shallow donors has been theoretically studied. In particular, the chemical-shift calculation was carried out within the frames of k•p approximation for single- and many-donor cases. For both cases, the great value of the chemical shift has been obtained compared to its bulk value. Such increase of the chemical shift becomes possible due to the quantum confinement effect in a dot. It is shown for the single-donor case that the level splitting and chemical shift strongly depend on the dot radius and donor position inside the nanocrystal. In the many-donor case, the chemical shift is almost proportional to the number of donors.

Continuous multispectral imaging of surface phonon polaritons on silicon carbide with an external cavity quantum cascade laser

NASA Astrophysics Data System (ADS)

Dougakiuchi, Tatsuo; Kawada, Yoichi; Takebe, Gen

2018-03-01

We demonstrate the continuous multispectral imaging of surface phonon polaritons (SPhPs) on silicon carbide excited by an external cavity quantum cascade laser using scattering-type scanning near-field optical microscopy. The launched SPhPs were well characterized via the confirmation that the theoretical dispersion relation and measured in-plane wave vectors are in excellent agreement in the entire measurement range. The proposed scheme, which can excite and observe SPhPs with an arbitrary wavelength that effectively covers the spectral gap of CO2 lasers, is expected to be applicable for studies of near-field optics and for various applications based on SPhPs.

Hybrid III-V Silicon Lasers

NASA Astrophysics Data System (ADS)

Bowers, John

2014-03-01

Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

Programming languages and compiler design for realistic quantum hardware.

PubMed

Chong, Frederic T; Franklin, Diana; Martonosi, Margaret

2017-09-13

Quantum computing sits at an important inflection point. For years, high-level algorithms for quantum computers have shown considerable promise, and recent advances in quantum device fabrication offer hope of utility. A gap still exists, however, between the hardware size and reliability requirements of quantum computing algorithms and the physical machines foreseen within the next ten years. To bridge this gap, quantum computers require appropriate software to translate and optimize applications (toolflows) and abstraction layers. Given the stringent resource constraints in quantum computing, information passed between layers of software and implementations will differ markedly from in classical computing. Quantum toolflows must expose more physical details between layers, so the challenge is to find abstractions that expose key details while hiding enough complexity.

Programming languages and compiler design for realistic quantum hardware

NASA Astrophysics Data System (ADS)

Chong, Frederic T.; Franklin, Diana; Martonosi, Margaret

2017-09-01

Quantum computing sits at an important inflection point. For years, high-level algorithms for quantum computers have shown considerable promise, and recent advances in quantum device fabrication offer hope of utility. A gap still exists, however, between the hardware size and reliability requirements of quantum computing algorithms and the physical machines foreseen within the next ten years. To bridge this gap, quantum computers require appropriate software to translate and optimize applications (toolflows) and abstraction layers. Given the stringent resource constraints in quantum computing, information passed between layers of software and implementations will differ markedly from in classical computing. Quantum toolflows must expose more physical details between layers, so the challenge is to find abstractions that expose key details while hiding enough complexity.

Building an adiabatic quantum computer simulation in the classroom

NASA Astrophysics Data System (ADS)

Rodríguez-Laguna, Javier; Santalla, Silvia N.

2018-05-01

We present a didactic introduction to adiabatic quantum computation (AQC) via the explicit construction of a classical simulator of quantum computers. This constitutes a suitable route to introduce several important concepts for advanced undergraduates in physics: quantum many-body systems, quantum phase transitions, disordered systems, spin-glasses, and computational complexity theory.

Nontrivial Quantum Effects in Biology: A Skeptical Physicists' View

NASA Astrophysics Data System (ADS)

Wiseman, Howard; Eisert, Jens

The following sections are included: * Introduction * A Quantum Life Principle * A quantum chemistry principle? * The anthropic principle * Quantum Computing in the Brain * Nature did everything first? * Decoherence as the make or break issue * Quantum error correction * Uselessness of quantum algorithms for organisms * Quantum Computing in Genetics * Quantum search * Teleological aspects and the fast-track to life * Quantum Consciousness * Computability and free will * Time scales * Quantum Free Will * Predictability and free will * Determinism and free will * Acknowledgements * References

Algorithmic complexity of quantum capacity

NASA Astrophysics Data System (ADS)

Oskouei, Samad Khabbazi; Mancini, Stefano

2018-04-01

We analyze the notion of quantum capacity from the perspective of algorithmic (descriptive) complexity. To this end, we resort to the concept of semi-computability in order to describe quantum states and quantum channel maps. We introduce algorithmic entropies (like algorithmic quantum coherent information) and derive relevant properties for them. Then we show that quantum capacity based on semi-computable concept equals the entropy rate of algorithmic coherent information, which in turn equals the standard quantum capacity. Thanks to this, we finally prove that the quantum capacity, for a given semi-computable channel, is limit computable.

Computing quantum hashing in the model of quantum branching programs

NASA Astrophysics Data System (ADS)

Ablayev, Farid; Ablayev, Marat; Vasiliev, Alexander

2018-02-01

We investigate the branching program complexity of quantum hashing. We consider a quantum hash function that maps elements of a finite field into quantum states. We require that this function is preimage-resistant and collision-resistant. We consider two complexity measures for Quantum Branching Programs (QBP): a number of qubits and a number of compu-tational steps. We show that the quantum hash function can be computed efficiently. Moreover, we prove that such QBP construction is optimal. That is, we prove lower bounds that match the constructed quantum hash function computation.

Symmetrically private information retrieval based on blind quantum computing

NASA Astrophysics Data System (ADS)

Sun, Zhiwei; Yu, Jianping; Wang, Ping; Xu, Lingling

2015-05-01

Universal blind quantum computation (UBQC) is a new secure quantum computing protocol which allows a user Alice who does not have any sophisticated quantum technology to delegate her computing to a server Bob without leaking any privacy. Using the features of UBQC, we propose a protocol to achieve symmetrically private information retrieval, which allows a quantum limited Alice to query an item from Bob with a fully fledged quantum computer; meanwhile, the privacy of both parties is preserved. The security of our protocol is based on the assumption that malicious Alice has no quantum computer, which avoids the impossibility proof of Lo. For the honest Alice, she is almost classical and only requires minimal quantum resources to carry out the proposed protocol. Therefore, she does not need any expensive laboratory which can maintain the coherence of complicated quantum experimental setups.

Hybrid Quantum-Classical Approach to Quantum Optimal Control.

PubMed

Li, Jun; Yang, Xiaodong; Peng, Xinhua; Sun, Chang-Pu

2017-04-14

A central challenge in quantum computing is to identify more computational problems for which utilization of quantum resources can offer significant speedup. Here, we propose a hybrid quantum-classical scheme to tackle the quantum optimal control problem. We show that the most computationally demanding part of gradient-based algorithms, namely, computing the fitness function and its gradient for a control input, can be accomplished by the process of evolution and measurement on a quantum simulator. By posing queries to and receiving answers from the quantum simulator, classical computing devices update the control parameters until an optimal control solution is found. To demonstrate the quantum-classical scheme in experiment, we use a seven-qubit nuclear magnetic resonance system, on which we have succeeded in optimizing state preparation without involving classical computation of the large Hilbert space evolution.

Spatially resolved resonant tunneling on single atoms in silicon.

PubMed

Voisin, B; Salfi, J; Bocquel, J; Rahman, R; Rogge, S

2015-04-22

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent electronic manipulation, on the dopants atomic scale properties. This requires both fine energetic and spatial resolution of the energy spectrum and wave-function, respectively. Here we present an experiment fulfilling both conditions: we perform transport on single donors in silicon close to a vacuum interface using a scanning tunneling microscope (STM) in the single electron tunneling regime. The spatial degrees of freedom of the STM tip provide a versatility allowing a unique understanding of electrostatics. We obtain the absolute energy scale from the thermal broadening of the resonant peaks, allowing us to deduce the charging energies of the donors. Finally we use a rate equations model to derive the current in presence of an excited state, highlighting the benefits of the highly tunable vacuum tunnel rates which should be exploited in further experiments. This work provides a general framework to investigate dopant-based systems at the atomic scale.

Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

PubMed

Zani, Maurizio; Sala, Vittorio; Irde, Gabriele; Pietralunga, Silvia Maria; Manzoni, Cristian; Cerullo, Giulio; Lanzani, Guglielmo; Tagliaferri, Alberto

2018-04-01

The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces. Copyright © 2018 Elsevier B.V. All rights reserved.

Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley E. Patt; Jan S. Iwanczyk

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

NASA Astrophysics Data System (ADS)

Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2018-05-01

We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Zero-field optical magnetic resonance study of phosphorus donors in 28-silicon

NASA Astrophysics Data System (ADS)

Morse, Kevin J.; Dluhy, Phillip; Huber, Julian; Salvail, Jeff Z.; Saeedi, Kamyar; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Simmons, S.; Thewalt, M. L. W.

2018-03-01

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous high fidelity qubit initialization, manipulation, and readout. Here we characterize the phosphorus in silicon system in the regime of "zero" magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ˜10 s Hahn echo coherence times, even for applied static magnetic fields below Earth's field.

Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagornov, Yu. S., E-mail: Nagornov.Yuri@gmail.com

2015-12-15

The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. A thermodynamic model has been proposed to describe the experimental data obtained by atomic-force microscopy, Raman scattering, spectral analysis, Auger spectroscopy, and X-ray diffraction spectroscopy. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals. The processes of laser annealing and electron irradiationmore » of carbonized porous silicon have been analyzed.« less

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

NASA Astrophysics Data System (ADS)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Private quantum computation: an introduction to blind quantum computing and related protocols

NASA Astrophysics Data System (ADS)

Fitzsimons, Joseph F.

2017-06-01

Quantum technologies hold the promise of not only faster algorithmic processing of data, via quantum computation, but also of more secure communications, in the form of quantum cryptography. In recent years, a number of protocols have emerged which seek to marry these concepts for the purpose of securing computation rather than communication. These protocols address the task of securely delegating quantum computation to an untrusted device while maintaining the privacy, and in some instances the integrity, of the computation. We present a review of the progress to date in this emerging area.

Synthetic Developments of Nontoxic Quantum Dots.

PubMed

Das, Adita; Snee, Preston T

2016-03-03

Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

OpenFlow Extensions for Programmable Quantum Networks

DTIC Science & Technology

2017-06-19

Extensions for Programmable Quantum Networks by Venkat Dasari, Nikolai Snow, and Billy Geerhart Computational and Information Sciences Directorate...distribution is unlimited. 1 1. Introduction Quantum networks and quantum computing have been receiving a surge of interest recently.1–3 However, there has...communicate using entangled particles and perform calculations using quantum logic gates. Additionally, quantum computing uses a quantum bit (qubit

Disciplines, models, and computers: the path to computational quantum chemistry.

PubMed

Lenhard, Johannes

2014-12-01

Many disciplines and scientific fields have undergone a computational turn in the past several decades. This paper analyzes this sort of turn by investigating the case of computational quantum chemistry. The main claim is that the transformation from quantum to computational quantum chemistry involved changes in three dimensions. First, on the side of instrumentation, small computers and a networked infrastructure took over the lead from centralized mainframe architecture. Second, a new conception of computational modeling became feasible and assumed a crucial role. And third, the field of computa- tional quantum chemistry became organized in a market-like fashion and this market is much bigger than the number of quantum theory experts. These claims will be substantiated by an investigation of the so-called density functional theory (DFT), the arguably pivotal theory in the turn to computational quantum chemistry around 1990.

Recent progress of quantum annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Sei

2015-03-10

We review the recent progress of quantum annealing. Quantum annealing was proposed as a method to solve generic optimization problems. Recently a Canadian company has drawn a great deal of attention, as it has commercialized a quantum computer based on quantum annealing. Although the performance of quantum annealing is not sufficiently understood, it is likely that quantum annealing will be a practical method both on a conventional computer and on a quantum computer.

Enhanced conversion efficiency in Si solar cells employing photoluminescent down-shifting CdSe/CdS core/shell quantum dots.

PubMed

Lopez-Delgado, R; Zhou, Y; Zazueta-Raynaud, A; Zhao, H; Pelayo, J E; Vomiero, A; Álvarez-Ramos, M E; Rosei, F; Ayon, A

2017-10-26

Silicon solar cells have captured a large portion of the total market of photovoltaic devices mostly due to their relatively high efficiency. However, Silicon exhibits limitations in ultraviolet absorption because high-energy photons are absorbed at the surface of the solar cell, in the heavily doped region, and the photo-generated electron-hole pairs need to diffuse into the junction region, resulting in significant carrier recombination. One of the alternatives to improve the absorption range involves the use of down-shifting nano-structures able to interact with the aforementioned high energy photons. Here, as a proof of concept, we use downshifting CdSe/CdS quantum dots to improve the performance of a silicon solar cell. The incorporation of these nanostructures triggered improvements in the short circuit current density (J sc , from 32.5 to 37.0 mA/cm 2 ). This improvement led to a ∼13% increase in the power conversion efficiency (PCE), from 12.0 to 13.5%. Our results demonstrate that the application of down-shifting materials is a viable strategy to improve the efficiency of Silicon solar cells with mass-compatible techniques that could serve to promote their widespread utilization.

Predictable quantum efficient detector based on n-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

DOE pushes for useful quantum computing

NASA Astrophysics Data System (ADS)

Cho, Adrian

2018-01-01

The U.S. Department of Energy (DOE) is joining the quest to develop quantum computers, devices that would exploit quantum mechanics to crack problems that overwhelm conventional computers. The initiative comes as Google and other companies race to build a quantum computer that can demonstrate "quantum supremacy" by beating classical computers on a test problem. But reaching that milestone will not mean practical uses are at hand, and the new $40 million DOE effort is intended to spur the development of useful quantum computing algorithms for its work in chemistry, materials science, nuclear physics, and particle physics. With the resources at its 17 national laboratories, DOE could play a key role in developing the machines, researchers say, although finding problems with which quantum computers can help isn't so easy.

Geometric manipulation of trapped ions for quantum computation.

PubMed

Duan, L M; Cirac, J I; Zoller, P

2001-06-01

We propose an experimentally feasible scheme to achieve quantum computation based solely on geometric manipulations of a quantum system. The desired geometric operations are obtained by driving the quantum system to undergo appropriate adiabatic cyclic evolutions. Our implementation of the all-geometric quantum computation is based on laser manipulation of a set of trapped ions. An all-geometric approach, apart from its fundamental interest, offers a possible method for robust quantum computation.

Cooling the Collective Motion of Trapped Ions to Initialize a Quantum Register

DTIC Science & Technology

2016-09-13

computation [1] provides a gen- eral framework for fundamental investigations into sub- jects such as entanglement, quantum measurement, and quantum ...information theory. Since quantum computation relies on entanglement between qubits, any implementa- tion of a quantum computer must offer isolation from the...for realiz- ing a quantum computer , which is scalable to an arbitrary number of qubits. Their scheme is based on a collection of trapped atomic ions

Quantum computing on encrypted data

NASA Astrophysics Data System (ADS)

Fisher, K. A. G.; Broadbent, A.; Shalm, L. K.; Yan, Z.; Lavoie, J.; Prevedel, R.; Jennewein, T.; Resch, K. J.

2014-01-01

The ability to perform computations on encrypted data is a powerful tool for protecting privacy. Recently, protocols to achieve this on classical computing systems have been found. Here, we present an efficient solution to the quantum analogue of this problem that enables arbitrary quantum computations to be carried out on encrypted quantum data. We prove that an untrusted server can implement a universal set of quantum gates on encrypted quantum bits (qubits) without learning any information about the inputs, while the client, knowing the decryption key, can easily decrypt the results of the computation. We experimentally demonstrate, using single photons and linear optics, the encryption and decryption scheme on a set of gates sufficient for arbitrary quantum computations. As our protocol requires few extra resources compared with other schemes it can be easily incorporated into the design of future quantum servers. These results will play a key role in enabling the development of secure distributed quantum systems.

Quantum computing on encrypted data.

PubMed

Fisher, K A G; Broadbent, A; Shalm, L K; Yan, Z; Lavoie, J; Prevedel, R; Jennewein, T; Resch, K J

2014-01-01

The ability to perform computations on encrypted data is a powerful tool for protecting privacy. Recently, protocols to achieve this on classical computing systems have been found. Here, we present an efficient solution to the quantum analogue of this problem that enables arbitrary quantum computations to be carried out on encrypted quantum data. We prove that an untrusted server can implement a universal set of quantum gates on encrypted quantum bits (qubits) without learning any information about the inputs, while the client, knowing the decryption key, can easily decrypt the results of the computation. We experimentally demonstrate, using single photons and linear optics, the encryption and decryption scheme on a set of gates sufficient for arbitrary quantum computations. As our protocol requires few extra resources compared with other schemes it can be easily incorporated into the design of future quantum servers. These results will play a key role in enabling the development of secure distributed quantum systems.

Research progress on quantum informatics and quantum computation

NASA Astrophysics Data System (ADS)

Zhao, Yusheng

2018-03-01

Quantum informatics is an emerging interdisciplinary subject developed by the combination of quantum mechanics, information science, and computer science in the 1980s. The birth and development of quantum information science has far-reaching significance in science and technology. At present, the application of quantum information technology has become the direction of people’s efforts. The preparation, storage, purification and regulation, transmission, quantum coding and decoding of quantum state have become the hotspot of scientists and technicians, which have a profound impact on the national economy and the people’s livelihood, technology and defense technology. This paper first summarizes the background of quantum information science and quantum computer and the current situation of domestic and foreign research, and then introduces the basic knowledge and basic concepts of quantum computing. Finally, several quantum algorithms are introduced in detail, including Quantum Fourier transform, Deutsch-Jozsa algorithm, Shor’s quantum algorithm, quantum phase estimation.

A cryogenic DAC operating down to 4.2 K

NASA Astrophysics Data System (ADS)

Rahman, M. T.; Lehmann, T.

2016-04-01

This paper presents a 10 bit CMOS current steering digital to analog converter (DAC) that operates from room temperature to as low as 4.2 K. It works as the core part of a cryogenic Silicon quantum computer controller circuit producing rapid control gate voltage pulses for quantum bits (qubits) initialization. An improved analog calibration method with a unique unit current cell design is included in the D/A converter structure to overcome the extended cryogenic nonlinear and mismatch effects. The DAC retains its 10 bit linear monotonic behavior over the wide temperature range and it drives a 50 Ω load to 516 mV with a full scale rise time of 10 ns. The differential non-linearity (DNL) of the converter is 0.35LSB while its average power consumption is 32.18 mW from a 3 V power supply. The complete converter is fabricated using a commercial 0.5 μm 1 poly 3 metal Silicon on Sapphire (SOS) CMOS process. He briefly worked as a Lecturer in the Stamford University Bangladesh prior to starting his Ph.D. in 2012 in the School of Electrical Engineering and Telecommunications, UNSW. His Ph.D. research is focused on cryogenic electronics for Quantum Computer Interface. His main research interests are in designing data converters for ultra-low temperature electronics and biomedical applications. He spent two years as a Research Fellow at the University of Edinburgh, U.K., where he worked with biologically inspired artificial neural systems. From 1997 to 2000, he was an Assistant Professor in electronics at the Technical University of Denmark, working with low-power low-noise low-voltage analog and mixed analog-digital integrated circuits. From 2001 to 2003 he was Principal Engineer with Cochlear Ltd., Australia, where he was involved in the design of the world's first fully implantable cochlear implant. Today he is Associate Professor in microelectronics at the University of New South Wales, Australia. He has authored over 100 journal papers, conference papers, book chapters and patents in microelectronic circuit design for a range of applications. His main research interests are in solid-state circuits and systems (analog and digital), biomedical microelectronics, ultra-low temperature electronics, nanometre CMOS, and green electronics.

Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes

NASA Astrophysics Data System (ADS)

Boettcher, Shannon W.; Spurgeon, Joshua M.; Putnam, Morgan C.; Warren, Emily L.; Turner-Evans, Daniel B.; Kelzenberg, Michael D.; Maiolo, James R.; Atwater, Harry A.; Lewis, Nathan S.

2010-01-01

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen2+/+ electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.

Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes.

PubMed

Boettcher, Shannon W; Spurgeon, Joshua M; Putnam, Morgan C; Warren, Emily L; Turner-Evans, Daniel B; Kelzenberg, Michael D; Maiolo, James R; Atwater, Harry A; Lewis, Nathan S

2010-01-08

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen(2+/+) electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.

Elucidating Reaction Mechanisms on Quantum Computers

NASA Astrophysics Data System (ADS)

Wiebe, Nathan; Reiher, Markus; Svore, Krysta; Wecker, Dave; Troyer, Matthias

We show how a quantum computer can be employed to elucidate reaction mechanisms in complex chemical systems, using the open problem of biological nitrogen fixation in nitrogenase as an example. We discuss how quantum computers can augment classical-computer simulations for such problems, to significantly increase their accuracy and enable hitherto intractable simulations. Detailed resource estimates show that, even when taking into account the substantial overhead of quantum error correction, and the need to compile into discrete gate sets, the necessary computations can be performed in reasonable time on small quantum computers. This demonstrates that quantum computers will realistically be able to tackle important problems in chemistry that are both scientifically and economically significant.

A scalable quantum computer with ions in an array of microtraps

PubMed

Cirac; Zoller

2000-04-06

Quantum computers require the storage of quantum information in a set of two-level systems (called qubits), the processing of this information using quantum gates and a means of final readout. So far, only a few systems have been identified as potentially viable quantum computer models--accurate quantum control of the coherent evolution is required in order to realize gate operations, while at the same time decoherence must be avoided. Examples include quantum optical systems (such as those utilizing trapped ions or neutral atoms, cavity quantum electrodynamics and nuclear magnetic resonance) and solid state systems (using nuclear spins, quantum dots and Josephson junctions). The most advanced candidates are the quantum optical and nuclear magnetic resonance systems, and we expect that they will allow quantum computing with about ten qubits within the next few years. This is still far from the numbers required for useful applications: for example, the factorization of a 200-digit number requires about 3,500 qubits, rising to 100,000 if error correction is implemented. Scalability of proposed quantum computer architectures to many qubits is thus of central importance. Here we propose a model for an ion trap quantum computer that combines scalability (a feature usually associated with solid state proposals) with the advantages of quantum optical systems (in particular, quantum control and long decoherence times).

Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy

DTIC Science & Technology

2016-08-25

life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an... quantum computer . DOI: 10.1103/PhysRevX.6.021028 Subject Areas: Condensed Matter Physics, Quantum Physics, Quantum Information I. INTRODUCTION Quantum ... computing hardware is affected by a substantial level of intrinsic noise and therefore naturally realizes dis- sipative quantum dynamics [1,2

Quantum Accelerators for High-performance Computing Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S.; Britt, Keith A.; Mohiyaddin, Fahd A.

We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, themore » prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration.« less

Growing Cobalt Silicide Columns In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Obert W.

1991-01-01

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

2015-08-01

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

Adiabatic topological quantum computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cesare, Chris; Landahl, Andrew J.; Bacon, Dave

Topological quantum computing promises error-resistant quantum computation without active error correction. However, there is a worry that during the process of executing quantum gates by braiding anyons around each other, extra anyonic excitations will be created that will disorder the encoded quantum information. Here, we explore this question in detail by studying adiabatic code deformations on Hamiltonians based on topological codes, notably Kitaev’s surface codes and the more recently discovered color codes. We develop protocols that enable universal quantum computing by adiabatic evolution in a way that keeps the energy gap of the system constant with respect to the computationmore » size and introduces only simple local Hamiltonian interactions. This allows one to perform holonomic quantum computing with these topological quantum computing systems. The tools we develop allow one to go beyond numerical simulations and understand these processes analytically.« less

Adiabatic topological quantum computing

DOE PAGES

Cesare, Chris; Landahl, Andrew J.; Bacon, Dave; ...

2015-07-31

Topological quantum computing promises error-resistant quantum computation without active error correction. However, there is a worry that during the process of executing quantum gates by braiding anyons around each other, extra anyonic excitations will be created that will disorder the encoded quantum information. Here, we explore this question in detail by studying adiabatic code deformations on Hamiltonians based on topological codes, notably Kitaev’s surface codes and the more recently discovered color codes. We develop protocols that enable universal quantum computing by adiabatic evolution in a way that keeps the energy gap of the system constant with respect to the computationmore » size and introduces only simple local Hamiltonian interactions. This allows one to perform holonomic quantum computing with these topological quantum computing systems. The tools we develop allow one to go beyond numerical simulations and understand these processes analytically.« less

Quantum computing and probability.

PubMed

Ferry, David K

2009-11-25

Over the past two decades, quantum computing has become a popular and promising approach to trying to solve computationally difficult problems. Missing in many descriptions of quantum computing is just how probability enters into the process. Here, we discuss some simple examples of how uncertainty and probability enter, and how this and the ideas of quantum computing challenge our interpretations of quantum mechanics. It is found that this uncertainty can lead to intrinsic decoherence, and this raises challenges for error correction.

Fast non-Abelian geometric gates via transitionless quantum driving.

PubMed

Zhang, J; Kyaw, Thi Ha; Tong, D M; Sjöqvist, Erik; Kwek, Leong-Chuan

2015-12-21

A practical quantum computer must be capable of performing high fidelity quantum gates on a set of quantum bits (qubits). In the presence of noise, the realization of such gates poses daunting challenges. Geometric phases, which possess intrinsic noise-tolerant features, hold the promise for performing robust quantum computation. In particular, quantum holonomies, i.e., non-Abelian geometric phases, naturally lead to universal quantum computation due to their non-commutativity. Although quantum gates based on adiabatic holonomies have already been proposed, the slow evolution eventually compromises qubit coherence and computational power. Here, we propose a general approach to speed up an implementation of adiabatic holonomic gates by using transitionless driving techniques and show how such a universal set of fast geometric quantum gates in a superconducting circuit architecture can be obtained in an all-geometric approach. Compared with standard non-adiabatic holonomic quantum computation, the holonomies obtained in our approach tends asymptotically to those of the adiabatic approach in the long run-time limit and thus might open up a new horizon for realizing a practical quantum computer.

Fast non-Abelian geometric gates via transitionless quantum driving

PubMed Central

Zhang, J.; Kyaw, Thi Ha; Tong, D. M.; Sjöqvist, Erik; Kwek, Leong-Chuan

2015-01-01

A practical quantum computer must be capable of performing high fidelity quantum gates on a set of quantum bits (qubits). In the presence of noise, the realization of such gates poses daunting challenges. Geometric phases, which possess intrinsic noise-tolerant features, hold the promise for performing robust quantum computation. In particular, quantum holonomies, i.e., non-Abelian geometric phases, naturally lead to universal quantum computation due to their non-commutativity. Although quantum gates based on adiabatic holonomies have already been proposed, the slow evolution eventually compromises qubit coherence and computational power. Here, we propose a general approach to speed up an implementation of adiabatic holonomic gates by using transitionless driving techniques and show how such a universal set of fast geometric quantum gates in a superconducting circuit architecture can be obtained in an all-geometric approach. Compared with standard non-adiabatic holonomic quantum computation, the holonomies obtained in our approach tends asymptotically to those of the adiabatic approach in the long run-time limit and thus might open up a new horizon for realizing a practical quantum computer. PMID:26687580

Verifiable fault tolerance in measurement-based quantum computation

NASA Astrophysics Data System (ADS)

Fujii, Keisuke; Hayashi, Masahito

2017-09-01

Quantum systems, in general, cannot be simulated efficiently by a classical computer, and hence are useful for solving certain mathematical problems and simulating quantum many-body systems. This also implies, unfortunately, that verification of the output of the quantum systems is not so trivial, since predicting the output is exponentially hard. As another problem, the quantum system is very delicate for noise and thus needs an error correction. Here, we propose a framework for verification of the output of fault-tolerant quantum computation in a measurement-based model. In contrast to existing analyses on fault tolerance, we do not assume any noise model on the resource state, but an arbitrary resource state is tested by using only single-qubit measurements to verify whether or not the output of measurement-based quantum computation on it is correct. Verifiability is equipped by a constant time repetition of the original measurement-based quantum computation in appropriate measurement bases. Since full characterization of quantum noise is exponentially hard for large-scale quantum computing systems, our framework provides an efficient way to practically verify the experimental quantum error correction.

Graphene and Carbon Quantum Dot-Based Materials in Photovoltaic Devices: From Synthesis to Applications

PubMed Central

Paulo, Sofia; Palomares, Emilio; Martinez-Ferrero, Eugenia

2016-01-01

Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV). Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized solar cells. In this review, we summarize the most common uses of both types of semiconducting materials and highlight the significant advances made in recent years due to the influence that synthetic materials have on final performance. PMID:28335285

Femtosecond Laser--Pumped Source of Entangled Photons for Quantum Cryptography Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, D.; Donaldson, W.; Sobolewski, R.

2007-07-31

We present an experimental setup for generation of entangled-photon pairs via spontaneous parametric down-conversion, based on the femtosecond-pulsed laser. Our entangled-photon source utilizes a 76-MHz-repetition-rate, 100-fs-pulse-width, mode-locked, ultrafast femtosecond laser, which can produce, on average, more photon pairs than a cw laser of an equal pump power. The resulting entangled pairs are counted by a pair of high-quantum-efficiency, single-photon, silicon avalanche photodiodes. Our apparatus is intended as an efficient source/receiver system for the quantum communications and quantum cryptography applications.

Topical Meeting on Picosecond Electronics and Optoelectronics

DTIC Science & Technology

1987-10-10

Gee, G. D Thurmond, H. W 8-00 AM (Invited Paper) Yen, Hughes Research Laboratories Design and fabrica- FA1 High-Speed Phenomena In GaAs Quantum Wells...D.H. Auston, P.R. Smith, J.C. Bean, J.P. Harbison, and D. Kaplan , "Picosecond Photoconciuctivity in Amorphous Silicon," in Picosecond Phenomena 1980... FA1 -4 QUANTUM-WELL PHYSICS AND DEVICES C. Weisbuch, Thomson CSF, Presider IA 155 , ,Ii : Al-1 High-Speed Phenomena in GaAs Multiple-Quantum-Wells A

Compiling Planning into Quantum Optimization Problems: A Comparative Study

DTIC Science & Technology

2015-06-07

and Sipser, M. 2000. Quantum computation by adiabatic evolution. arXiv:quant- ph/0001106. Fikes, R. E., and Nilsson, N. J. 1972. STRIPS: A new...become available: quantum annealing. Quantum annealing is one of the most accessible quantum algorithms for a computer sci- ence audience not versed...in quantum computing because of its close ties to classical optimization algorithms such as simulated annealing. While large-scale universal quantum

Quantum Computer Science

NASA Astrophysics Data System (ADS)

Mermin, N. David

2007-08-01

Preface; 1. Cbits and Qbits; 2. General features and some simple examples; 3. Breaking RSA encryption with a quantum computer; 4. Searching with a quantum computer; 5. Quantum error correction; 6. Protocols that use just a few Qbits; Appendices; Index.

Optimization of single keV ion implantation for the construction of single P-donor devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Hopf, Toby; Andresen, Soren E.; Hearne, Sean M.; Hudson, Fay E.; Pakes, Christopher I.; Mitic, Mladen; Gauja, Eric; Tamanyan, Grigori; Dzurak, Andrew S.; Prawer, Steven; Clark, Robert G.

2005-02-01

We report recent progress in single keV ion implantation and online detection for the controlled implantation of single donors in silicon. When integrated with silicon nanofabrication technology this forms the "top down" strategy for the construction of prototype solid state quantum computer devices based on phosphorus donors in silicon. We have developed a method of single ion implantation and online registration that employs detector electrodes adjacent to the area into which the donors are to be implanted. The implantation sites are positioned with nanometer accuracy using an electron beam lithography patterned PMMA mask. Control of the implantation depth of 20 nm is achieved by tuning the phosphorus ion energy to 14 keV. The counting of single ion implantation in each site is achieved by the detection of e-/h+ pairs produced by the implanted phosphorus ion in the substrate. The system is calibrated by use of Mn K-line x-rays (5.9 and 6.4 keV) and we find the ionization energy of the 14 keV phosphorus ions in silicon to be about 3.5-4.0 keV for implants through a 5 nm SiO2 surface layer. This paper describes the development of an improved PIN detector structure that provides more reliable performance of the earlier MOS structure. With the new structure, the energy noise threshold has been minimized to 1 keV or less. Unambiguous detection/counting of single keV ion implantation events were achieved with a confidence level greater than 98% with a reliable and reproducible fabrication process.

Surface Passivation by Quantum Exclusion Using Multiple Layers

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor)

2015-01-01

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Quantum Statistical Mechanics on a Quantum Computer

NASA Astrophysics Data System (ADS)

Raedt, H. D.; Hams, A. H.; Michielsen, K.; Miyashita, S.; Saito, K.

We describe a quantum algorithm to compute the density of states and thermal equilibrium properties of quantum many-body systems. We present results obtained by running this algorithm on a software implementation of a 21-qubit quantum computer for the case of an antiferromagnetic Heisenberg model on triangular lattices of different size.

An approach to quantum-computational hydrologic inverse analysis

DOE PAGES

O'Malley, Daniel

2018-05-02

Making predictions about flow and transport in an aquifer requires knowledge of the heterogeneous properties of the aquifer such as permeability. Computational methods for inverse analysis are commonly used to infer these properties from quantities that are more readily observable such as hydraulic head. We present a method for computational inverse analysis that utilizes a type of quantum computer called a quantum annealer. While quantum computing is in an early stage compared to classical computing, we demonstrate that it is sufficiently developed that it can be used to solve certain subsurface flow problems. We utilize a D-Wave 2X quantum annealermore » to solve 1D and 2D hydrologic inverse problems that, while small by modern standards, are similar in size and sometimes larger than hydrologic inverse problems that were solved with early classical computers. Our results and the rapid progress being made with quantum computing hardware indicate that the era of quantum-computational hydrology may not be too far in the future.« less

An approach to quantum-computational hydrologic inverse analysis.

PubMed

O'Malley, Daniel

2018-05-02

Making predictions about flow and transport in an aquifer requires knowledge of the heterogeneous properties of the aquifer such as permeability. Computational methods for inverse analysis are commonly used to infer these properties from quantities that are more readily observable such as hydraulic head. We present a method for computational inverse analysis that utilizes a type of quantum computer called a quantum annealer. While quantum computing is in an early stage compared to classical computing, we demonstrate that it is sufficiently developed that it can be used to solve certain subsurface flow problems. We utilize a D-Wave 2X quantum annealer to solve 1D and 2D hydrologic inverse problems that, while small by modern standards, are similar in size and sometimes larger than hydrologic inverse problems that were solved with early classical computers. Our results and the rapid progress being made with quantum computing hardware indicate that the era of quantum-computational hydrology may not be too far in the future.

An approach to quantum-computational hydrologic inverse analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Malley, Daniel

Making predictions about flow and transport in an aquifer requires knowledge of the heterogeneous properties of the aquifer such as permeability. Computational methods for inverse analysis are commonly used to infer these properties from quantities that are more readily observable such as hydraulic head. We present a method for computational inverse analysis that utilizes a type of quantum computer called a quantum annealer. While quantum computing is in an early stage compared to classical computing, we demonstrate that it is sufficiently developed that it can be used to solve certain subsurface flow problems. We utilize a D-Wave 2X quantum annealermore » to solve 1D and 2D hydrologic inverse problems that, while small by modern standards, are similar in size and sometimes larger than hydrologic inverse problems that were solved with early classical computers. Our results and the rapid progress being made with quantum computing hardware indicate that the era of quantum-computational hydrology may not be too far in the future.« less

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

PubMed

Keizer, Joris G; McKibbin, Sarah R; Simmons, Michelle Y

2015-07-28

Abrupt dopant profiles and low resistivity are highly sought after qualities in the silicon microelectronics industry and, more recently, in the development of an all epitaxial Si:P based quantum computer. If we increase the active carrier density in silicon to the point where the material becomes superconducting, while maintaining a low thermal budget, it will be possible to fabricate nanoscale superconducting devices using the highly successful technique of depassivation lithography. In this work, we investigate the dopant profile and activation in multiple high density Si:P δ-layers fabricated by stacking individual layers with intervening silicon growth. We determine that dopant activation is ultimately limited by the formation of P-P dimers due to the segregation of dopants between multilayers. By increasing the encapsulation thickness between subsequent layers, thereby minimizing the formation of these deactivating defects, we are able to achieve an active carrier density of ns = 4.5 ×10(14) cm(-2) for a triple layer. The results of electrical characterization are combined with those of secondary ion mass spectroscopy to construct a model that accurately describes the impact of P segregation on the final active carrier density in Si:P multilayers. Our model predicts that a 3D active carrier density of 8.5 × 10(20) cm(-3) (1.7 atom %) can be achieved.

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.

PubMed

Schatzl, Magdalena; Hackl, Florian; Glaser, Martin; Rauter, Patrick; Brehm, Moritz; Spindlberger, Lukas; Simbula, Angelica; Galli, Matteo; Fromherz, Thomas; Schäffler, Friedrich

2017-03-15

Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime.

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities

PubMed Central

2017-01-01

Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime. PMID:28345012

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

NASA Astrophysics Data System (ADS)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

A novel quantum scheme for secure two-party distance computation

NASA Astrophysics Data System (ADS)

Peng, Zhen-wan; Shi, Run-hua; Zhong, Hong; Cui, Jie; Zhang, Shun

2017-12-01

Secure multiparty computational geometry is an essential field of secure multiparty computation, which computes a computation geometric problem without revealing any private information of each party. Secure two-party distance computation is a primitive of secure multiparty computational geometry, which computes the distance between two points without revealing each point's location information (i.e., coordinate). Secure two-party distance computation has potential applications with high secure requirements in military, business, engineering and so on. In this paper, we present a quantum solution to secure two-party distance computation by subtly using quantum private query. Compared to the classical related protocols, our quantum protocol can ensure higher security and better privacy protection because of the physical principle of quantum mechanics.

Self-assembled III-V quantum dots: potential for silicon optoelectronics

NASA Technical Reports Server (NTRS)

Leon, R.

2001-01-01

The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

High-Threshold Fault-Tolerant Quantum Computation with Analog Quantum Error Correction

NASA Astrophysics Data System (ADS)

Fukui, Kosuke; Tomita, Akihisa; Okamoto, Atsushi; Fujii, Keisuke

2018-04-01

To implement fault-tolerant quantum computation with continuous variables, the Gottesman-Kitaev-Preskill (GKP) qubit has been recognized as an important technological element. However, it is still challenging to experimentally generate the GKP qubit with the required squeezing level, 14.8 dB, of the existing fault-tolerant quantum computation. To reduce this requirement, we propose a high-threshold fault-tolerant quantum computation with GKP qubits using topologically protected measurement-based quantum computation with the surface code. By harnessing analog information contained in the GKP qubits, we apply analog quantum error correction to the surface code. Furthermore, we develop a method to prevent the squeezing level from decreasing during the construction of the large-scale cluster states for the topologically protected, measurement-based, quantum computation. We numerically show that the required squeezing level can be relaxed to less than 10 dB, which is within the reach of the current experimental technology. Hence, this work can considerably alleviate this experimental requirement and take a step closer to the realization of large-scale quantum computation.

Quantum Gauss-Jordan Elimination and Simulation of Accounting Principles on Quantum Computers

NASA Astrophysics Data System (ADS)

Diep, Do Ngoc; Giang, Do Hoang; Van Minh, Nguyen

2017-06-01

The paper is devoted to a version of Quantum Gauss-Jordan Elimination and its applications. In the first part, we construct the Quantum Gauss-Jordan Elimination (QGJE) Algorithm and estimate the complexity of computation of Reduced Row Echelon Form (RREF) of N × N matrices. The main result asserts that QGJE has computation time is of order 2 N/2. The second part is devoted to a new idea of simulation of accounting by quantum computing. We first expose the actual accounting principles in a pure mathematics language. Then, we simulate the accounting principles on quantum computers. We show that, all accounting actions are exhousted by the described basic actions. The main problems of accounting are reduced to some system of linear equations in the economic model of Leontief. In this simulation, we use our constructed Quantum Gauss-Jordan Elimination to solve the problems and the complexity of quantum computing is a square root order faster than the complexity in classical computing.

Experimental Identification of Non-Abelian Topological Orders on a Quantum Simulator.

PubMed

Li, Keren; Wan, Yidun; Hung, Ling-Yan; Lan, Tian; Long, Guilu; Lu, Dawei; Zeng, Bei; Laflamme, Raymond

2017-02-24

Topological orders can be used as media for topological quantum computing-a promising quantum computation model due to its invulnerability against local errors. Conversely, a quantum simulator, often regarded as a quantum computing device for special purposes, also offers a way of characterizing topological orders. Here, we show how to identify distinct topological orders via measuring their modular S and T matrices. In particular, we employ a nuclear magnetic resonance quantum simulator to study the properties of three topologically ordered matter phases described by the string-net model with two string types, including the Z_{2} toric code, doubled semion, and doubled Fibonacci. The third one, non-Abelian Fibonacci order is notably expected to be the simplest candidate for universal topological quantum computing. Our experiment serves as the basic module, built on which one can simulate braiding of non-Abelian anyons and ultimately, topological quantum computation via the braiding, and thus provides a new approach of investigating topological orders using quantum computers.

Noise Threshold and Resource Cost of Fault-Tolerant Quantum Computing with Majorana Fermions in Hybrid Systems.

PubMed

Li, Ying

2016-09-16

Fault-tolerant quantum computing in systems composed of both Majorana fermions and topologically unprotected quantum systems, e.g., superconducting circuits or quantum dots, is studied in this Letter. Errors caused by topologically unprotected quantum systems need to be corrected with error-correction schemes, for instance, the surface code. We find that the error-correction performance of such a hybrid topological quantum computer is not superior to a normal quantum computer unless the topological charge of Majorana fermions is insusceptible to noise. If errors changing the topological charge are rare, the fault-tolerance threshold is much higher than the threshold of a normal quantum computer and a surface-code logical qubit could be encoded in only tens of topological qubits instead of about 1,000 normal qubits.

Applications and assessment of QM:QM electronic embedding using generalized asymmetric Mulliken atomic charges.

PubMed

Parandekar, Priya V; Hratchian, Hrant P; Raghavachari, Krishnan

2008-10-14

Hybrid QM:QM (quantum mechanics:quantum mechanics) and QM:MM (quantum mechanics:molecular mechanics) methods are widely used to calculate the electronic structure of large systems where a full quantum mechanical treatment at a desired high level of theory is computationally prohibitive. The ONIOM (our own N-layer integrated molecular orbital molecular mechanics) approximation is one of the more popular hybrid methods, where the total molecular system is divided into multiple layers, each treated at a different level of theory. In a previous publication, we developed a novel QM:QM electronic embedding scheme within the ONIOM framework, where the model system is embedded in the external Mulliken point charges of the surrounding low-level region to account for the polarization of the model system wave function. Therein, we derived and implemented a rigorous expression for the embedding energy as well as analytic gradients that depend on the derivatives of the external Mulliken point charges. In this work, we demonstrate the applicability of our QM:QM method with point charge embedding and assess its accuracy. We study two challenging systems--zinc metalloenzymes and silicon oxide cages--and demonstrate that electronic embedding shows significant improvement over mechanical embedding. We also develop a modified technique for the energy and analytic gradients using a generalized asymmetric Mulliken embedding method involving an unequal splitting of the Mulliken overlap populations to offer improvement in situations where the Mulliken charges may be deficient.

Demonstration of a small programmable quantum computer with atomic qubits.

PubMed

Debnath, S; Linke, N M; Figgatt, C; Landsman, K A; Wright, K; Monroe, C

2016-08-04

Quantum computers can solve certain problems more efficiently than any possible conventional computer. Small quantum algorithms have been demonstrated on multiple quantum computing platforms, many specifically tailored in hardware to implement a particular algorithm or execute a limited number of computational paths. Here we demonstrate a five-qubit trapped-ion quantum computer that can be programmed in software to implement arbitrary quantum algorithms by executing any sequence of universal quantum logic gates. We compile algorithms into a fully connected set of gate operations that are native to the hardware and have a mean fidelity of 98 per cent. Reconfiguring these gate sequences provides the flexibility to implement a variety of algorithms without altering the hardware. As examples, we implement the Deutsch-Jozsa and Bernstein-Vazirani algorithms with average success rates of 95 and 90 per cent, respectively. We also perform a coherent quantum Fourier transform on five trapped-ion qubits for phase estimation and period finding with average fidelities of 62 and 84 per cent, respectively. This small quantum computer can be scaled to larger numbers of qubits within a single register, and can be further expanded by connecting several such modules through ion shuttling or photonic quantum channels.

Demonstration of a small programmable quantum computer with atomic qubits

NASA Astrophysics Data System (ADS)

Debnath, S.; Linke, N. M.; Figgatt, C.; Landsman, K. A.; Wright, K.; Monroe, C.

2016-08-01

Quantum computers can solve certain problems more efficiently than any possible conventional computer. Small quantum algorithms have been demonstrated on multiple quantum computing platforms, many specifically tailored in hardware to implement a particular algorithm or execute a limited number of computational paths. Here we demonstrate a five-qubit trapped-ion quantum computer that can be programmed in software to implement arbitrary quantum algorithms by executing any sequence of universal quantum logic gates. We compile algorithms into a fully connected set of gate operations that are native to the hardware and have a mean fidelity of 98 per cent. Reconfiguring these gate sequences provides the flexibility to implement a variety of algorithms without altering the hardware. As examples, we implement the Deutsch-Jozsa and Bernstein-Vazirani algorithms with average success rates of 95 and 90 per cent, respectively. We also perform a coherent quantum Fourier transform on five trapped-ion qubits for phase estimation and period finding with average fidelities of 62 and 84 per cent, respectively. This small quantum computer can be scaled to larger numbers of qubits within a single register, and can be further expanded by connecting several such modules through ion shuttling or photonic quantum channels.

Two-spectral Yang-Baxter operators in topological quantum computation

NASA Astrophysics Data System (ADS)

Sanchez, William F.

2011-05-01

One of the current trends in quantum computing is the application of algebraic topological methods in the design of new algorithms and quantum computers, giving rise to topological quantum computing. One of the tools used in it is the Yang-Baxter equation whose solutions are interpreted as universal quantum gates. Lately, more general Yang-Baxter equations have been investigated, making progress as two-spectral equations and Yang-Baxter systems. This paper intends to apply these new findings to the field of topological quantum computation, more specifically, the proposition of the two-spectral Yang-Baxter operators as universal quantum gates for 2 qubits and 2 qutrits systems, obtaining 4x4 and 9x9 matrices respectively, and further elaboration of the corresponding Hamiltonian by the use of computer algebra software Mathematica® and its Qucalc package. In addition, possible physical systems to which the Yang-Baxter operators obtained can be applied are considered. In the present work it is demonstrated the utility of the Yang-Baxter equation to generate universal quantum gates and the power of computer algebra to design them; it is expected that these mathematical studies contribute to the further development of quantum computers

A SiGe Quadrature Pulse Modulator for Superconducting Qubit State Manipulation

NASA Astrophysics Data System (ADS)

Kwende, Randy; Bardin, Joseph

Manipulation of the quantum states of microwave superconducting qubits typically requires the generation of coherent modulated microwave pulses. While many off-the-shelf instruments are capable of generating such pulses, a more integrated approach is likely required if fault-tolerant quantum computing architectures are to be implemented. In this work, we present progress towards a pulse generator specifically designed to drive superconducing qubits. The device is implemented in a commercial silicon process and has been designed with energy-efficiency and scalability in mind. Pulse generation is carried out using a unique approach in which modulation is applied directly to the in-phase and quadrature components of a carrier signal in the 1-10 GHz frequency range through a unique digital-analog conversion process designed specifically for this application. The prototype pulse generator can be digitally programmed and supports sequencing of pulses with independent amplitude and phase waveforms. These amplitude and phase waveforms can be digitally programmed through a serial programming interface. Detailed performance of the pulse generator at room temperature and 4 K will be presented.

Counted Sb donors in Si quantum dots

NASA Astrophysics Data System (ADS)

Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

2015-03-01

Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

The Harvard Clean Energy Project: High-throughput screening of organic photovoltaic materials using cheminformatics, machine learning, and pattern recognition

NASA Astrophysics Data System (ADS)

Olivares-Amaya, Roberto; Hachmann, Johannes; Amador-Bedolla, Carlos; Daly, Aidan; Jinich, Adrian; Atahan-Evrenk, Sule; Boixo, Sergio; Aspuru-Guzik, Alán

2012-02-01

Organic photovoltaic devices have emerged as competitors to silicon-based solar cells, currently reaching efficiencies of over 9% and offering desirable properties for manufacturing and installation. We study conjugated donor polymers for high-efficiency bulk-heterojunction photovoltaic devices with a molecular library motivated by experimental feasibility. We use quantum mechanics and a distributed computing approach to explore this vast molecular space. We will detail the screening approach starting from the generation of the molecular library, which can be easily extended to other kinds of molecular systems. We will describe the screening method for these materials which ranges from descriptor models, ubiquitous in the drug discovery community, to eventually reaching first principles quantum chemistry methods. We will present results on the statistical analysis, based principally on machine learning, specifically partial least squares and Gaussian processes. Alongside, clustering methods and the use of the hypergeometric distribution reveal moieties important for the donor materials and allow us to quantify structure-property relationships. These efforts enable us to accelerate materials discovery in organic photovoltaics through our collaboration with experimental groups.

Semiconductor material and method for enhancing solubility of a dopant therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Rubia, Tomas Diaz; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2003-09-09

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2005-03-29

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Universal non-adiabatic holonomic quantum computation in decoherence-free subspaces with quantum dots inside a cavity

NASA Astrophysics Data System (ADS)

Liu, Jun; Dong, Ping; Zhou, Jian; Cao, Zhuo-Liang

2017-05-01

A scheme for implementing the non-adiabatic holonomic quantum computation in decoherence-free subspaces is proposed with the interactions between a microcavity and quantum dots. A universal set of quantum gates can be constructed on the encoded logical qubits with high fidelities. The current scheme can suppress both local and collective noises, which is very important for achieving universal quantum computation. Discussions about the gate fidelities with the experimental parameters show that our schemes can be implemented in current experimental technology. Therefore, our scenario offers a method for universal and robust solid-state quantum computation.

Silicon photonics for high-performance interconnection networks

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr

2011-12-01

We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics enables new sets of opportunities that we can leverage for performance gains, as well as new sets of challenges that we must solve. Leveraging its inherent compatibility with standard fabrication techniques of the semiconductor industry, combined with its capability of dense integration with advanced microelectronics, silicon photonics also offers a clear path toward commercialization through low-cost mass-volume production. Combining empirical validations of feasibility, demonstrations of massive performance gains in large-scale systems, and the potential for commercial penetration of silicon photonics, the impact of this work will become evident in the many decades that follow.

Quantum-kinetic theory of photocurrent generation via direct and phonon-mediated optical transitions

NASA Astrophysics Data System (ADS)

Aeberhard, U.

2011-07-01

A quantum kinetic theory of direct and phonon-mediated indirect optical transitions is developed within the framework of the nonequilibrium Green’s function formalism. After validation against the standard Fermi golden rule approach in the bulk case, it is used in the simulation of photocurrent generation in ultrathin crystalline silicon p-i-n junction devices.

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

NASA Astrophysics Data System (ADS)

King, Cameron; Schoenfield, Joshua; Calderón, M. J.; Koiller, Belita; Saraiva, André; Hu, Xuedong; Jiang, Hong-Wen; Friesen, Mark; Coppersmith, S. N.

Fabricating quantum dots in silicon metal-oxide-semiconductor (MOS) for quantum information processing applications is attractive because of the long spin coherence times in silicon and the potential for leveraging the massive investments that have been made for scaling of the technology for classical electronics. One obstacle that has impeded the development of electrically gated MOS singlet-triplet qubits is the lack of observed spin blockade, where the tunneling of a second electron into a dot is fast when the two-electron state is a singlet and slow when the two-electron state is a triplet, even in samples with large singlet-triplet energy splittings. We show that this is a commonly exhibited problem in MOS double quantum dots, and present evidence that the cause is stray positive charges in the oxide layer inducing accidental dots near the device's active region that allow spin blockade lifting. This work was supported by ARO (W911NF-12-1-0607), NSF (IIA-1132804), the Department of Defense under Contract No. H98230-15-C 0453, ARO (W911NF-14-1-0346), NSF (OISE-1132804), ONR (N00014-15-1-0029), and ARO (W911NF-12-R-0012).

Near-Unity Internal Quantum Efficiency of Luminescent Silicon Nanocrystals with Ligand Passivation.

PubMed

Sangghaleh, Fatemeh; Sychugov, Ilya; Yang, Zhenyu; Veinot, Jonathan G C; Linnros, Jan

2015-07-28

Spectrally resolved photoluminescence (PL) decays were measured for samples of colloidal, ligand-passivated silicon nanocrystals. These samples have PL emission energies with peak positions in the range ∼1.4-1.8 eV and quantum yields of ∼30-70%. Their ensemble PL decays are characterized by a stretched-exponential decay with a dispersion factor of ∼0.8, which changes to an almost monoexponential character at fixed detection energies. The dispersion factors and decay rates for various detection energies were extracted from spectrally resolved curves using a mathematical approach that excluded the effect of homogeneous line width broadening. Since nonradiative recombination would introduce a random lifetime variation, leading to a stretched-exponential decay for an ensemble, we conclude that the observed monoexponential decay in size-selected ensembles signifies negligible nonradiative transitions of a similar strength to the radiative one. This conjecture is further supported as extracted decay rates agree with radiative rates reported in the literature, suggesting 100% internal quantum efficiency over a broad range of emission wavelengths. The apparent differences in the quantum yields can then be explained by a varying fraction of "dark" or blinking nanocrystals.

A new software-based architecture for quantum computer

NASA Astrophysics Data System (ADS)

Wu, Nan; Song, FangMin; Li, Xiangdong

2010-04-01

In this paper, we study a reliable architecture of a quantum computer and a new instruction set and machine language for the architecture, which can improve the performance and reduce the cost of the quantum computing. We also try to address some key issues in detail in the software-driven universal quantum computers.

Efficient quantum walk on a quantum processor

PubMed Central

Qiang, Xiaogang; Loke, Thomas; Montanaro, Ashley; Aungskunsiri, Kanin; Zhou, Xiaoqi; O'Brien, Jeremy L.; Wang, Jingbo B.; Matthews, Jonathan C. F.

2016-01-01

The random walk formalism is used across a wide range of applications, from modelling share prices to predicting population genetics. Likewise, quantum walks have shown much potential as a framework for developing new quantum algorithms. Here we present explicit efficient quantum circuits for implementing continuous-time quantum walks on the circulant class of graphs. These circuits allow us to sample from the output probability distributions of quantum walks on circulant graphs efficiently. We also show that solving the same sampling problem for arbitrary circulant quantum circuits is intractable for a classical computer, assuming conjectures from computational complexity theory. This is a new link between continuous-time quantum walks and computational complexity theory and it indicates a family of tasks that could ultimately demonstrate quantum supremacy over classical computers. As a proof of principle, we experimentally implement the proposed quantum circuit on an example circulant graph using a two-qubit photonics quantum processor. PMID:27146471

Estimating the Resources for Quantum Computation with the QuRE Toolbox

DTIC Science & Technology

2013-05-31

quantum computing. Quantum Info. Comput., 9(7):666–682, July 2009. [13] M. Saffman, T. G. Walker, and K. Mølmer. Quantum information with rydberg atoms...109(5):735–750, 2011. [24] Aram Harrow , Avinatan Hassidim, and Seth Lloyd. Quantum algorithm for solving linear systems of equations. Phys. Rev

Entanglement in a Quantum Annealing Processor

DTIC Science & Technology

2016-09-07

that QA is a viable technology for large- scale quantum computing . DOI: 10.1103/PhysRevX.4.021041 Subject Areas: Quantum Physics, Quantum Information...Superconductivity I. INTRODUCTION The past decade has been exciting for the field of quantum computation . A wide range of physical imple- mentations...measurements used in studying prototype universal quantum computers [9–14]. These constraints make it challenging to experimentally determine whether a scalable

Quantum Optical Implementations of Current Quantum Computing Paradigms

DTIC Science & Technology

2005-05-01

Conferences and Proceedings: The results were presented at several conferences. These include: 1. M. O. Scully, " Foundations of Quantum Mechanics ", in...applications have revealed a strong connection between the fundamental aspects of quantum mechanics that governs physical systems and the informational...could be solved in polynomial time using quantum computers. Another set of problems where quantum mechanics can carry out computations substantially

Experimental Adiabatic Quantum Factorization under Ambient Conditions Based on a Solid-State Single Spin System.

PubMed

Xu, Kebiao; Xie, Tianyu; Li, Zhaokai; Xu, Xiangkun; Wang, Mengqi; Ye, Xiangyu; Kong, Fei; Geng, Jianpei; Duan, Changkui; Shi, Fazhan; Du, Jiangfeng

2017-03-31

The adiabatic quantum computation is a universal and robust method of quantum computing. In this architecture, the problem can be solved by adiabatically evolving the quantum processor from the ground state of a simple initial Hamiltonian to that of a final one, which encodes the solution of the problem. Adiabatic quantum computation has been proved to be a compatible candidate for scalable quantum computation. In this Letter, we report on the experimental realization of an adiabatic quantum algorithm on a single solid spin system under ambient conditions. All elements of adiabatic quantum computation, including initial state preparation, adiabatic evolution (simulated by optimal control), and final state read-out, are realized experimentally. As an example, we found the ground state of the problem Hamiltonian S_{z}I_{z} on our adiabatic quantum processor, which can be mapped to the factorization of 35 into its prime factors 5 and 7.

Experimental Adiabatic Quantum Factorization under Ambient Conditions Based on a Solid-State Single Spin System

NASA Astrophysics Data System (ADS)

Xu, Kebiao; Xie, Tianyu; Li, Zhaokai; Xu, Xiangkun; Wang, Mengqi; Ye, Xiangyu; Kong, Fei; Geng, Jianpei; Duan, Changkui; Shi, Fazhan; Du, Jiangfeng

2017-03-01

The adiabatic quantum computation is a universal and robust method of quantum computing. In this architecture, the problem can be solved by adiabatically evolving the quantum processor from the ground state of a simple initial Hamiltonian to that of a final one, which encodes the solution of the problem. Adiabatic quantum computation has been proved to be a compatible candidate for scalable quantum computation. In this Letter, we report on the experimental realization of an adiabatic quantum algorithm on a single solid spin system under ambient conditions. All elements of adiabatic quantum computation, including initial state preparation, adiabatic evolution (simulated by optimal control), and final state read-out, are realized experimentally. As an example, we found the ground state of the problem Hamiltonian SzIz on our adiabatic quantum processor, which can be mapped to the factorization of 35 into its prime factors 5 and 7.

Compressed quantum computation using a remote five-qubit quantum computer

NASA Astrophysics Data System (ADS)

Hebenstreit, M.; Alsina, D.; Latorre, J. I.; Kraus, B.

2017-05-01

The notion of compressed quantum computation is employed to simulate the Ising interaction of a one-dimensional chain consisting of n qubits using the universal IBM cloud quantum computer running on log2(n ) qubits. The external field parameter that controls the quantum phase transition of this model translates into particular settings of the quantum gates that generate the circuit. We measure the magnetization, which displays the quantum phase transition, on a two-qubit system, which simulates a four-qubit Ising chain, and show its agreement with the theoretical prediction within a certain error. We also discuss the relevant point of how to assess errors when using a cloud quantum computer with a limited amount of runs. As a solution, we propose to use validating circuits, that is, to run independent controlled quantum circuits of similar complexity to the circuit of interest.

Experimental comparison of two quantum computing architectures.

PubMed

Linke, Norbert M; Maslov, Dmitri; Roetteler, Martin; Debnath, Shantanu; Figgatt, Caroline; Landsman, Kevin A; Wright, Kenneth; Monroe, Christopher

2017-03-28

We run a selection of algorithms on two state-of-the-art 5-qubit quantum computers that are based on different technology platforms. One is a publicly accessible superconducting transmon device (www. ibm.com/ibm-q) with limited connectivity, and the other is a fully connected trapped-ion system. Even though the two systems have different native quantum interactions, both can be programed in a way that is blind to the underlying hardware, thus allowing a comparison of identical quantum algorithms between different physical systems. We show that quantum algorithms and circuits that use more connectivity clearly benefit from a better-connected system of qubits. Although the quantum systems here are not yet large enough to eclipse classical computers, this experiment exposes critical factors of scaling quantum computers, such as qubit connectivity and gate expressivity. In addition, the results suggest that codesigning particular quantum applications with the hardware itself will be paramount in successfully using quantum computers in the future.

Continuous-variable quantum Gaussian process regression and quantum singular value decomposition of nonsparse low-rank matrices

NASA Astrophysics Data System (ADS)

Das, Siddhartha; Siopsis, George; Weedbrook, Christian

2018-02-01

With the significant advancement in quantum computation during the past couple of decades, the exploration of machine-learning subroutines using quantum strategies has become increasingly popular. Gaussian process regression is a widely used technique in supervised classical machine learning. Here we introduce an algorithm for Gaussian process regression using continuous-variable quantum systems that can be realized with technology based on photonic quantum computers under certain assumptions regarding distribution of data and availability of efficient quantum access. Our algorithm shows that by using a continuous-variable quantum computer a dramatic speedup in computing Gaussian process regression can be achieved, i.e., the possibility of exponentially reducing the time to compute. Furthermore, our results also include a continuous-variable quantum-assisted singular value decomposition method of nonsparse low rank matrices and forms an important subroutine in our Gaussian process regression algorithm.

Effect of oxygen plasma on nanomechanical silicon nitride resonators

NASA Astrophysics Data System (ADS)

Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

2017-08-01

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

Scalable quantum computer architecture with coupled donor-quantum dot qubits

DOEpatents

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Experimental realization of universal geometric quantum gates with solid-state spins.

PubMed

Zu, C; Wang, W-B; He, L; Zhang, W-G; Dai, C-Y; Wang, F; Duan, L-M

2014-10-02

Experimental realization of a universal set of quantum logic gates is the central requirement for the implementation of a quantum computer. In an 'all-geometric' approach to quantum computation, the quantum gates are implemented using Berry phases and their non-Abelian extensions, holonomies, from geometric transformation of quantum states in the Hilbert space. Apart from its fundamental interest and rich mathematical structure, the geometric approach has some built-in noise-resilience features. On the experimental side, geometric phases and holonomies have been observed in thermal ensembles of liquid molecules using nuclear magnetic resonance; however, such systems are known to be non-scalable for the purposes of quantum computing. There are proposals to implement geometric quantum computation in scalable experimental platforms such as trapped ions, superconducting quantum bits and quantum dots, and a recent experiment has realized geometric single-bit gates in a superconducting system. Here we report the experimental realization of a universal set of geometric quantum gates using the solid-state spins of diamond nitrogen-vacancy centres. These diamond defects provide a scalable experimental platform with the potential for room-temperature quantum computing, which has attracted strong interest in recent years. Our experiment shows that all-geometric and potentially robust quantum computation can be realized with solid-state spin quantum bits, making use of recent advances in the coherent control of this system.

Universal quantum gates for Single Cooper Pair Box based quantum computing

NASA Technical Reports Server (NTRS)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.