Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

NASA Astrophysics Data System (ADS)

Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

2014-03-01

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

DOEpatents

Vawter, Gregory A.; Smith, Robert E.

1998-01-01

A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides.

Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

DOEpatents

Vawter, G.A.; Smith, R.E.

1998-04-28

A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides. 7 figs.

Analysis and design of tunable wideband microwave photonics phase shifter based on Fabry-Perot cavity and Bragg mirrors in silicon-on-insulator waveguide.

PubMed

Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei

2010-04-20

We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.

Optical modulation in silicon waveguides via charge state control of deep levels.

PubMed

Logan, D F; Jessop, P E; Knights, A P; Wojcik, G; Goebel, A

2009-10-12

The control of defect mediated optical absorption at a wavelength of 1550 nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A 'normally-off' depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide

NASA Astrophysics Data System (ADS)

Rong, Haisheng; Liu, Ansheng; Nicolaescu, Remus; Paniccia, Mario; Cohen, Oded; Hak, Dani

2004-09-01

We fabricated a low-loss (˜0.22dB/cm) rib waveguide (WG) in silicon-on-insulator with a small effective core area of ˜1.57μm2 and measured the stimulated Raman scattering gain in the WG. We obtained 2.3dB Raman gain in a 4.8-cm-long S-shaped WG using a 1455nm pump laser with a cw power of 0.9W measured before the WG. In addition, we observed nonlinear dependence of Raman gain and optical propagation loss as a function of the pump power. Our study shows that this mainly is due to two-photon absorption (TPA) induced free carrier absorption in the silicon WG. We experimentally determined the TPA induced free carrier lifetime of 25ns, which agrees well with our modeling.

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides

NASA Astrophysics Data System (ADS)

Wei, Yuxin; Li, Guoyi; Hao, Yinlei; Li, Yubo; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2011-08-01

The undercut long-wave infrared (LWIR) waveguide components with air-gap beneath are analyzed and fabricated on the Si-wafer with simple manufacturing process. A 1 × 2 multimode interference (MMI) splitter based on this structure is presented and measured under the 10.6μm wavelength experimental setup. The uniformity of the MMI fabricated is 0.76 dB. The relationship among the output power, slab thickness and air-gap width is also fully discussed. Furthermore, undercut straight waveguides based on SOI platform are fabricated for propagation loss evaluation. Ways to reduce the loss are discussed either.

Photosensitive adhesive bonding process of magnetooptic waveguides with Si guiding layer for optical nonreciprocal devices

NASA Astrophysics Data System (ADS)

Choowitsakunlert, Salinee; Takagiwa, Kenji; Kobashigawa, Takuya; Hosoya, Nariaki; Silapunt, Rardchawadee; Yokoi, Hideki

2018-05-01

A photosensitive adhesive bonding process for a magnetooptic waveguide for an optical isolator employing a nonreciprocal guided-radiation mode conversion is investigated at 1.55 µm. The magnetooptic waveguide is a straight rib type, and it is fabricated by bonding the Si guiding layer to a magnetic garnet. In the fabrication process, an adhesive material is diluted to obtain a certain thickness before depositing on a silicon-on-insulator (SOI) substrate. The relationship between the percent dilution ratio and the thickness of the adhesive layer is considered. The smallest gap thickness is found to be 0.66 µm at a dilution ratio of 2%.

Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method.

PubMed

Dufour, Christian; Cardin, Julien; Debieu, Olivier; Fafin, Alexandre; Gourbilleau, Fabrice

2011-04-04

By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

PubMed Central

2011-01-01

By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible. PMID:21711829

Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

NASA Astrophysics Data System (ADS)

Liu, Qifa; Wang, Wei

2018-01-01

Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE PAGES

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; ...

2015-08-20

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Design and fabrication of inverted rib waveguide Bragg grating

NASA Astrophysics Data System (ADS)

Huang, Cheng-Sheng; Wang, Wei-Chih

2009-03-01

A polymeric SU8 rib waveguide Bragg grating filterfabricated using reactive ion etching (RIE) and solvent assisted microcontact molding (SAMIM) is presented. SAMIM is one kind of soft lithography. The technique is unique in which that a composite hPDMS/PDMS stamp was used to transfer the grating pattern onto an inverted SU8 rib waveguide system. The composite grating stamp can be used repeatedly several times with degradation. Using this stamp and inverter rib waveguide structure, the Bragg grating filter fabrication can be significantly simplified.

Integrated optical silicon IC compatible nanodevices for biosensing applications

NASA Astrophysics Data System (ADS)

Lechuga, Laura M.; Sepulveda, Borja; Llobera, Andreu; Calle, Ana; Dominguez, Carlos M.

2003-04-01

Biological and chemical sensing is one of the application fields where integrated optical nanodevices can play an important role [1]. We present a Silicon Integrated Mach-Zehnder Interferometer Nanodevice using a Total Internal Refraction waveguide configuration. The induced changes due to a biomolecular interactions in the effective refractive index of the waveguide,is monitored by the measurement of the change in the properties of the propagating light. For using this device as a biosensor, the waveguides of the structure must verify two conditions: work in the monomode regime and to have a Surface Sensivity as high as possible in the sensing arm. The MZI device structure is: (i) a Si wafer with a 500 mm thickness (ii) a 2 mm thick thermal Silicon-Oxide layer with a refractive index of 1.46 (iii) a LPCVD Silicon Nitride layer of 100 nm thickness and a refractive index of 2.00, which is used as the guiding layer. To achieve monomode behavior is needed to define a rib structure, with a depth of only 3 nm, on the Silicon Nitride layer by a lithographic step. This rib structure is performed by RIE and is the most critical step in the microfabrication of the device. Over the structure a protective layer of LPCVD SiO2 is deposited, with a 2 mm thickness and a refractive index of 1.46, which is patterned (photolithography) and etched (RIE) to define the sensing arm. The high sensivity of these devices makes them quite suitable for biosensing applications. For that, without loosing their activity the receptors biomolecules are covanlently immobilized, at nanometer scale , on the sensor area surface. Biospecific molecular recognition takes places when the complementary analyte to the receptor is flowed over the receptor using a flow system. Several biosensing applications have been performed with this device as enviromental pollutant control, immunosensing or genetic detection.

GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

PubMed

Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro

2018-03-20

Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7  dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

SU8 inverted-rib waveguide Bragg grating filter.

PubMed

Huang, Cheng-Sheng; Wang, Wei-Chih

2013-08-01

A polymeric SU8 inverted-rib waveguide Bragg grating filter fabricated using reactive ion etching (RIE) and solvent assisted microcontact molding (SAMIM) is presented. SAMIM is one kind of soft lithography. The technique is unique in that a composite hard-polydimethysiloxane/polydimethysiloxane stamp is used to transfer the grating pattern onto an inverted SU8 rib waveguide system. The composite grating stamp can be used repeatedly several times without degradation. Using this stamp and inverter-rib waveguide structure, the Bragg grating filter fabrication can be significantly simplified. The experiment result shows an attenuation dip in the transmission spectra, with a value of -7 dBm at 1550 nm for a grating with a period of 0.492 μm on an inverted-rib waveguide with 6.6 μm width and 4 μm height.

Chalcogenide based rib waveguide for compact on-chip supercontinuum sources in mid-infrared domain

NASA Astrophysics Data System (ADS)

Saini, Than Singh; Tiwari, Umesh Kumar; Sinha, Ravindra Kumar

2017-08-01

We have designed and analysed a rib waveguide structure in recently reported Ga-Sb-S based highly nonlinear chalcogenide glass for nonlinear applications. The proposed waveguide structure possesses a very high nonlinear coefficient and can be used to generate broadband supercontinuum in mid-infrared domain. The reported design of the chalcogenide waveguide offers two zero dispersion values at 1800 nm and 2900 nm. Such rib waveguide structure is suitable to generate efficient supercontinuum generation ranging from 500 - 7400 μm. The reported waveguide can be used for the realization of the compact on-chip supercontinuum sources which are highly applicable in optical imaging, optical coherence tomography, food quality control, security and sensing.

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

PubMed

Liang, H K; Yu, S F; Yang, H Y

2010-02-15

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

NASA Astrophysics Data System (ADS)

Sun, DeGui

2013-09-01

In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

PubMed

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

Large-core single-mode rib SU8 waveguide using solvent-assisted microcontact molding.

PubMed

Huang, Cheng-Sheng; Wang, Wei-Chih

2008-09-01

This paper describes a novel fabrication technique for constructing a polymer-based large-core single-mode rib waveguide. A negative tone SU8 photoresist with a high optical transmission over a large wavelength range and stable mechanical properties was used as a waveguide material. A waveguide was constructed by using a polydimethylsiloxane stamp combined with a solvent-assisted microcontact molding technique. The effects on the final pattern's geometry of four different process conditions were investigated. Optical simulations were performed using beam propagation method software. Single-mode beam propagation was observed at the output of the simulated waveguide as well as the actual waveguide through the microscope image.

Rib waveguide in Ga-Sb-S chalcogenide glass for on-chip mid-IR supercontinuum sources: Design and analysis

NASA Astrophysics Data System (ADS)

Saini, Than Singh; Tiwari, Umesh Kumar; Sinha, Ravindra Kumar

2017-08-01

Recently, highly nonlinear Ga-Sb-S chalcogenide glasses have been reported for promising mid-infrared applications such as thermal imaging, nonlinear optics, and infrared lasers. However, the nonlinear optical fiber and waveguide geometries in Ga-Sb-S chalcogenide glasses have not been reported to date. In this paper, we numerically investigate the design of the dual zero dispersion engineered rib waveguide in Ga8Sb32S60 chalcogenide glass by employing MgF2 glass as a lower and upper cladding material. The waveguide structure possesses nonlinearity as high as 24 100 W-1 Km-1 and 14 000 W-1 Km-1 at 2050 and 2800 nm, respectively. The reported waveguide is able to generate a mid-infrared supercontinuum spectrum spanning from 1000 to 7800 nm when it pumped with 97 femtosecond laser pulses of a peak power of 1 kW at 2050 nm. We have also showed that the supercontinuum spectrum can be extended to the spectral range of 1000-9700 nm using pumping with 497 fs pulses of a peak power of 6.4 kW at 2800 nm. To the best of our knowledge, the proposed rib waveguide structure in Ga8Sb32S60 chalcogenide glass has been reported first time for nonlinear applications. Such a dispersion engineered rib waveguide structure has potential applications for the low-cost, power efficient, and compact on-chip mid-infrared supercontinuum sources and other nonlinear photonic devices.

Tapered rib fiber coupler for semiconductor optical devices

DOEpatents

Vawter, Gregory A.; Smith, Robert Edward

2001-01-01

A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

Numerical model of the polymer electro-optic waveguide

NASA Astrophysics Data System (ADS)

Fan, Guofang; Li, Yuan; Han, Bing; Wang, Qi; Liu, Xinhou; Zhen, Zhen

2012-09-01

A numerical design model is presented for the polymer waveguide in an electro-optic modulator. The effective index method is used to analyze the height of the core waveguide and rib waveguide, an improved Marcatili method is presented to design the rib waveguide width in order to keep the strong single mode operation and have a good match with the standard fiber. Also, the thickness of the upper cladding layer is discussed through calculating the effective index of the multilayer planar waveguide structure has been obtained by setting the optical loss due to the metallic absorption to an acceptable value (<0.1 dB/cm). As a consequence, we take the EO polymer waveguide structure of UV15:CLD/APC:UFC170 as an example, an optimized design is reported.

Flexible polymeric rib waveguide with self-align couplers system

PubMed Central

Huang, Cheng-Sheng; Wang, Wei-Chih

2011-01-01

The authors report a polymeric based rib waveguide with U shape self-align fiber couplers system using a simple micromolding process with SU8 as a molding material and polydimethysiloxane as a waveguide material. The material is used for its good optical transparency, low surface tension, biocompatibility, and durability. Furthermore, the material is highly formable. This unique fabrication molding technique provides a means of keeping the material and manufacturing costs to a minimum. The self-align fiber couplers system also proves a fast and simple means of light coupling. The flexible nature of the waveguide material makes this process ideal for a potential wearable optical sensor. PMID:22171151

Feasibility of Coupling Between a Single-Mode Elliptical-Core Fiber and a Single Mode Rib Waveguide Over Temperature. Ph.D. Thesis - Akron Univ., Aug. 1995

NASA Technical Reports Server (NTRS)

Tuma, Margaret L.

1995-01-01

To determine the feasibility of coupling the output of an optical fiber to a rib waveguide in a temperature environment ranging from 20 C to 300 C, a theoretical calculation of the coupling efficiency between the two was investigated. This is a significant problem which needs to be addressed to determine whether an integrated optic device can function in a harsh temperature environment. Because the behavior of the integrated-optic device is polarization sensitive, a polarization-preserving optic fiber, via its elliptical core, was used to couple light with a known polarization into the device. To couple light energy efficiently from an optical fiber into a channel waveguide, the design of both components should provide for well-matched electric field profiles. The rib waveguide analyzed was the light input channel of an integrated-optic pressure sensor. Due to the complex geometry of the rib waveguide, there is no analytical solution to the wave equation for the guided modes. Approximation or numerical techniques must be utilized to determine the propagation constants and field patterns of the guide. In this study, three solution methods were used to determine the field profiles of both the fiber and guide: the effective-index method (EIM), Marcatili's approximation, and a Fourier method. These methods were utilized independently to calculate the electric field profile of a rib channel waveguide and elliptical fiber at two temperatures, 20 C and 300 C. These temperatures were chosen to represent a nominal and a high temperature that the device would experience. Using the electric field profile calculated from each method, the theoretical coupling efficiency between the single-mode optical fiber and rib waveguide was calculated using the overlap integral and results of the techniques compared. Initially, perfect alignment was assumed and the coupling efficiency calculated. Then, the coupling efficiency calculation was repeated for a range of transverse offsets at both temperatures. Results of the calculation indicate a high coupling efficiency can be achieved when the two components were properly aligned. The coupling efficiency was more sensitive to alignment offsets in the y direction than the x, due to the elliptical modal profile of both components. Changes in the coupling efficiency over temperature were found to be minimal.

Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Hassan, Karim; Ferrotti, Thomas; Harduin, Julie; Duprez, Hélène; Menezo, Sylvie; Ben Bakir, Badhise

2015-02-01

In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices ng ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rengstl, U.; Schwartz, M.; Herzog, T.

2015-07-13

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, wheremore » the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.« less

Rectangular-cladding silicon slot waveguide with improved nonlinear performance

NASA Astrophysics Data System (ADS)

Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

2018-04-01

Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

Modeling of dispersion engineered chalcogenide rib waveguide for ultraflat mid-infrared supercontinuum generation in all-normal dispersion regime

NASA Astrophysics Data System (ADS)

Ahmad, H.; Karim, M. R.; Rahman, B. M. A.

2018-03-01

A rigorous numerical investigation has been carried out through dispersion engineering of chalcogenide rib waveguide for near-infrared to mid-infrared ultraflat broadband supercontinuum generation in all-normal group-velocity dispersion regime. We propose a novel design of a 1-cm-long air-clad rib waveguide which is made from {Ge}_{11.5} {As}_{24} {Se}_{64.5} chalcogenide glass as the core with either silica or {Ge}_{11.5} {As}_{24} {S}_{64.5} chalcogenide glass as a lower cladding separately. A broadband ultraflat supercontinuum spanning from 1300 to 1900 nm could be generated when pumped at 1.55 μ {m} with a low input peak power of 100 W. Shifting the pump to 2 μ {m}, the supercontinuum spectra extended in the mid-infrared region up to 3400 nm with a moderate-input peak power of 500 W. To achieve further extension in mid-infrared, we excite our optimized rib waveguide in both the anomalous and all-normal dispersion pumping regions at 3.1 μ {m} with a largest input peak power of 3 kW. In the case of anomalous dispersion region pumping, numerical analysis shows that supercontinuum spectrum can be extended in the mid-infrared up to 10 μ {m}, although this contains high spectral amplitude fluctuations over the entire bandwidth which limits the supercontinuum sources in the field of high precision measurement applications. On the other hand, by optimizing a rib waveguide geometry for pumping in all-normal dispersion region, we are able to generate a smooth and flat-top coherent supercontinuum spectrum with a moderate bandwidth spanning the wavelength range 2-5.5 μ {m} with less than 5 dB spectral fluctuation over the entire output bandwidth. Our proposed design is highly suitable for making on-chip SC light sources for a variety of applications such as biomedical imaging, and environmental and industrial sensing in the mid-infrared region.

Effects of design geometry on SU8 polymer waveguides

NASA Astrophysics Data System (ADS)

Holland, Anthony S.; Balkunje, Vishal S.; Mitchell, Arnan; Austin, Michael W.; Raghunathan, Mukund K.; Kostovski, Gorgi

2005-02-01

The spin-on photoresist SU8 from MicroChem has a relatively high refractive index (n=1.57 at 1550nm) compared with other polymers. It is stable and has high optical transmission at optical communication wavelengths. In this paper we study rib waveguides fabricated using SU8 as the core layer and thermoset polymers UV15 (n=1.50 at 1550nm) from Master Bond and NOA61 (n=1.54 at 1550nm) from Gentec as the cladding layers. The rib height is varied from 0.3 to 1.7μm high. This is part of the SU8 layer sandwiched between the cladding layers. The waveguides are tested to determine the effects of varying this geometry for single mode optical transmission. The lengths of the waveguides were 1.5 cm to 5 cm.

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Mcwright, G.

1981-01-01

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barabanenkov, M. Yu., E-mail: barab@iptm.ru; Vyatkin, A. F.; Volkov, V. T.

2015-12-15

Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve the problem of 1.5-µm wavelength radiation input-output and its frequency filtering, strip diffraction gratings and two-dimensional photonic crystals are integrated into waveguides. The reflection and transmission spectra of gratings and photonic crystals are calculated. The waveguide-mode-attenuation coefficient for a polycrystalline silicon waveguide is experimentally estimated.

Ultra-fast pulse propagation in nonlinear graphene/silicon ridge waveguide

NASA Astrophysics Data System (ADS)

Liu, Ken; Zhang, Jian Fa; Xu, Wei; Zhu, Zhi Hong; Guo, Chu Cai; Li, Xiu Jian; Qin, Shi Qiao

2015-11-01

We report the femtosecond laser propagation in a hybrid graphene/silicon ridge waveguide with demonstration of the ultra-large Kerr coefficient of graphene. We also fabricated a slot-like graphene/silicon ridge waveguide which can enhance its effective Kerr coefficient 1.5 times compared with the graphene/silicon ridge waveguide. Both transverse-electric-like (TE-like) mode and transverse-magnetic-like (TM-like) mode are experimentally measured and numerically analyzed. The results show nonlinearity dependence on mode polarization not in graphene/silicon ridge waveguide but in slot-like graphene/silicon ridge waveguide. Great spectral broadening was observed due to self-phase modulation (SPM) after propagation in the hybrid waveguide with length of 2 mm. Power dependence property of the slot-like hybrid waveguide is also measured and numerically analyzed. The results also confirm the effective Kerr coefficient estimation of the hybrid structures. Spectral blue shift of the output pulse was observed in the slot-like graphene/silicon ridge waveguide. One possible explanation is that the blue shift was caused by the ultra-fast free carrier effect with the optical absorption of the doped graphene. This interesting effect can be used for soliton compression in femtosecond region. We also discussed the broadband anomalous dispersion of the Kerr coefficient of graphene.

Phase-shifter using submicron silicon waveguide couplers with ultra-small electro-mechanical actuator.

PubMed

Ikeda, Taro; Takahashi, Kazunori; Kanamori, Yoshiaki; Hane, Kazuhiro

2010-03-29

Phase shifter is an important part of optical waveguide circuits as used in interferometer. However, it is not always easy to generate a large phase shift in a small region. Here, a variable phase-shifter operating as delay-line of silicon waveguide was designed and fabricated by silicon micromachining. The proposed phase-shifter consists of a freestanding submicron-wide silicon waveguide with two waveguide couplers and an ultrasmall silicon comb-drive actuator. The position of the freestanding waveguide is moved by the actuator to vary the total optical path. Phase-shift was measured in a Mach-Zehnder interferometer to be 3.0pi at the displacement of 1.0 mum at the voltage of 31 V. The dimension of the fabricated device is 50microm wide and 85microm long.

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

PubMed

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

NASA Technical Reports Server (NTRS)

Yap, Markus; Tai, Yu-Chong; Mcgrath, William R.; Walker, Christopher

1992-01-01

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Investigation of AWG demultiplexer based SOI for CWDM application

NASA Astrophysics Data System (ADS)

Juhari, Nurjuliana; Susthitha Menon, P.; Shaari, Sahbudin; Annuar Ehsan, Abang

2017-11-01

9-channel Arrayed Waveguide Grating (AWG) demultiplexer for conventional and tapered structure were simulated using beam propagation method (BPM) with channel spacing of 20 nm. The AWG demultiplexer was design using high refractive index (n 3.47) material namely silicon-on-insulator (SOI) with rib waveguide structure. The characteristics of insertion loss, adjacent crosstalk and output spectrum response at central wavelength of 1.55 μm for both designs were compared and analyzed. The conventional AWG produced a minimum insertion loss of 6.64 dB whereas the tapered AWG design reduced the insertion loss by 2.66 dB. The lowest adjacent crosstalk value of -16.96 dB was obtained in the conventional AWG design and this was much smaller compared to the tapered AWG design where the lowest crosstalk value is -17.23 dB. Hence, a tapered AWG design significantly reduces the insertion loss but has a slightly higher adjacent crosstalk compared to the conventional AWG design. On the other hand, the output spectrum responses that are obtained from both designs were close to the Coarse Wavelength Division Multiplexing (CWDM) wavelength grid.

Ultra-large nonlinear parameter in graphene-silicon waveguide structures.

PubMed

Donnelly, Christine; Tan, Dawn T H

2014-09-22

Mono-layer graphene integrated with optical waveguides is studied for the purpose of maximizing E-field interaction with the graphene layer, for the generation of ultra-large nonlinear parameters. It is shown that the common approach used to minimize the waveguide effective modal area does not accurately predict the configuration with the maximum nonlinear parameter. Both photonic and plasmonic waveguide configurations and graphene integration techniques realizable with today's fabrication tools are studied. Importantly, nonlinear parameters exceeding 10(4) W(-1)/m, two orders of magnitude larger than that in silicon on insulator waveguides without graphene, are obtained for the quasi-TE mode in silicon waveguides incorporating mono-layer graphene in the evanescent part of the optical field. Dielectric loaded surface plasmon polariton waveguides incorporating mono-layer graphene are observed to generate nonlinear parameters as large as 10(5) W(-1)/m, three orders of magnitude larger than that in silicon on insulator waveguides without graphene. The ultra-large nonlinear parameters make such waveguides promising platforms for nonlinear integrated optics at ultra-low powers, and for previously unobserved nonlinear optical effects to be studied in a waveguide platform.

Magneto-optical non-reciprocal devices in silicon photonics

PubMed Central

Shoji, Yuya; Mizumoto, Tetsuya

2014-01-01

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm. PMID:27877640

Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides.

PubMed

Chmielak, Bartos; Matheisen, Christopher; Ripperda, Christian; Bolten, Jens; Wahlbrink, Thorsten; Waldow, Michael; Kurz, Heinrich

2013-10-21

We present detailed investigations of the local strain distribution and the induced second-order optical nonlinearity within strained silicon waveguides cladded with a Si₃N₄ strain layer. Micro-Raman Spectroscopy mappings and electro-optic characterization of waveguides with varying width w(WG) show that strain gradients in the waveguide core and the effective second-order susceptibility χ(2)(yyz) increase with reduced w(WG). For 300 nm wide waveguides a mean effective χ(2)(yyz) of 190 pm/V is achieved, which is the highest value reported for silicon so far. To gain more insight into the origin of the extraordinary large optical second-order nonlinearity of strained silicon waveguides numerical simulations of edge induced strain gradients in these structures are presented and discussed.

Misalignment tolerant efficient inverse taper coupler for silicon waveguide

NASA Astrophysics Data System (ADS)

Wang, Peng; Michael, Aron; Kwok, Chee Yee; Chen, Ssu-Han

2015-12-01

This paper describes an efficient fiber to submicron silicon waveguide coupling based on an inversely tapered silicon waveguide embedded in a SiO2 waveguide that is suspended in air. The inverse taper waveguide consist of a 50um long and 240nm thick silicon that linearly taper in width from 500nm to 120nm, which is embedded in SiO2. The SiO2 waveguide is 6um wide and 10um long. The simulation results show that the coupling loss of this new approach is 2.7dB including the interface loss at the input and output. The tolerance to fiber misalignment at the input of the coupler is 2um in both horizontal and vertical directions for only 1.5dB additional loss.

Broadband and scalable optical coupling for silicon photonics using polymer waveguides

NASA Astrophysics Data System (ADS)

La Porta, Antonio; Weiss, Jonas; Dangel, Roger; Jubin, Daniel; Meier, Norbert; Horst, Folkert; Offrein, Bert Jan

2018-04-01

We present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide.

PubMed

Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

2016-06-15

We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

All silicon waveguide spherical microcavity coupler device.

PubMed

Xifré-Pérez, E; Domenech, J D; Fenollosa, R; Muñoz, P; Capmany, J; Meseguer, F

2011-02-14

A coupler based on silicon spherical microcavities coupled to silicon waveguides for telecom wavelengths is presented. The light scattered by the microcavity is detected and analyzed as a function of the wavelength. The transmittance signal through the waveguide is strongly attenuated (up to 25 dB) at wavelengths corresponding to the Mie resonances of the microcavity. The coupling between the microcavity and the waveguide is experimentally demonstrated and theoretically modeled with the help of FDTD calculations.

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process.

PubMed

Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2010-08-30

We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

FIBER AND INTEGRATED OPTICS: New type of heterogeneous nanophotonic silicon-on-insulator optical waveguides

NASA Astrophysics Data System (ADS)

Tsarev, Andrei V.

2007-08-01

A new type of optical waveguides in silicon-on-insulator nanostructures is proposed and studied. Their optical properties are simulated by the beam propagation method and discussed. A new design in the form of heterogeneous waveguide structures is based on the production of additionally heavily doped p+-regions on the sides of a multimode stripe waveguide (the silicon core cross section is ~200 nm × 16 μm). Such doping provides the 'single-mode' behaviour of the heterogeneous waveguide due to the decrease in the optical losses for the fundamental mode and increase in losses for higher-order modes. Single-mode heterogeneous waveguides can be used as base waveguides in photonic and integrated optical elements.

Flexible integration of free-standing nanowires into silicon photonics.

PubMed

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

PubMed

Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

2013-05-20

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

Design of miniaturized silicon wire and slot waveguide polarization splitterbased on a resonant tunneling.

PubMed

Komatsu, Masa-Aki; Saitoh, Kunimasa; Koshiba, Masanori

2009-10-12

We propose an ultra-small polarization splitter based on a resonant tunneling phenomenon. This polarization splitter consists of two identical horizontally oblong silicon wire waveguides separated by a vertical slot waveguide. The structural parameters of the central resonant slot waveguide are designed to couple only the TM-like mode between the left and right side silicon wire waveguides. Results from numerical simulation with the full-vectorial beam propagation method show that a 16-mum-long polarization splitter with extinction ratio better than -20 dB on the entire C-band is achieved.

Strategies to improve electrode positioning and safety in cochlear implants.

PubMed

Rebscher, S J; Heilmann, M; Bruszewski, W; Talbot, N H; Snyder, R L; Merzenich, M M

1999-03-01

An injection-molded internal supporting rib has been produced to control the flexibility of silicone rubber encapsulated electrodes designed to electrically stimulate the auditory nerve in human subjects with severe to profound hearing loss. The rib molding dies, and molds for silicone rubber encapsulation of the electrode, were designed and machined using AutoCad and MasterCam software packages in a PC environment. After molding, the prototype plastic ribs were iteratively modified based on observations of the performance of the rib/silicone composite insert in a clear plastic model of the human scala tympani cavity. The rib-based electrodes were reliably inserted farther into these models, required less insertion force and were positioned closer to the target auditory neural elements than currently available cochlear implant electrodes. With further design improvements the injection-molded rib may also function to accurately support metal stimulating contacts and wire leads during assembly to significantly increase the manufacturing efficiency of these devices. This method to reliably control the mechanical properties of miniature implantable devices with multiple electrical leads may be valuable in other areas of biomedical device design.

Gamma radiation effects on silicon photonic waveguides.

PubMed

Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

2016-07-01

To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

PubMed

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides.

PubMed

Teng, Jie; Dumon, Pieter; Bogaerts, Wim; Zhang, Hongbo; Jian, Xigao; Han, Xiuyou; Zhao, Mingshan; Morthier, Geert; Baets, Roel

2009-08-17

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding. (c) 2009 Optical Society of America

Dry-film polymer waveguide for silicon photonics chip packaging.

PubMed

Hsu, Hsiang-Han; Nakagawa, Shigeru

2014-09-22

Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale.

PubMed

Wu, Marcelo; Han, Zhanghua; Van, Vien

2010-05-24

Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.

THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ((2)).

PubMed

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-07-14

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.

Silicon Micromachining for Terahertz Component Development

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Reck, Theodore J.; Jung-Kubiak, Cecile; Siles, Jose V.; Lee, Choonsup; Lin, Robert; Mehdi, Imran

2013-01-01

Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

NASA Astrophysics Data System (ADS)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Silicon Oxycarbide Waveguides for Photonic Applications

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Melloni, Andrea

2018-01-01

Silicon oxycarbide thin films deposited with rf reactive magnetron sputtering a SiC target are exploited to demonstrate photonic waveguides with a high refractive index of 1.82 yielding an index contrast of 18% with silica glass. The propagation losses of the photonic waveguides are measured at the telecom wavelength of 1.55 μm by cut-back technique. The results demonstrate the potential of silicon oxycarbide for photonic applications.

Design and characterization of integrated components for SiN photonic quantum circuits.

PubMed

Poot, Menno; Schuck, Carsten; Ma, Xiao-Song; Guo, Xiang; Tang, Hong X

2016-04-04

The design, fabrication, and detailed calibration of essential building blocks towards fully integrated linear-optics quantum computation are discussed. Photonic devices are made from silicon nitride rib waveguides, where measurements on ring resonators show small propagation losses. Directional couplers are designed to be insensitive to fabrication variations. Their offset and coupling lengths are measured, as well as the phase difference between the transmitted and reflected light. With careful calibrations, the insertion loss of the directional couplers is found to be small. Finally, an integrated controlled-NOT circuit is characterized by measuring the transmission through different combinations of inputs and outputs. The gate fidelity for the CNOT operation with this circuit is estimated to be 99.81% after post selection. This high fidelity is due to our robust design, good fabrication reproducibility, and extensive characterizations.

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide.

PubMed

Sekiguchi, Shigeaki; Kurahashi, Teruo; Zhu, Lei; Kawaguchi, Kenichi; Morito, Ken

2012-04-09

We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

Integrated amorphous silicon-aluminum long-range surface plasmon polariton (LR-SPP) waveguides

NASA Astrophysics Data System (ADS)

Sturlesi, Boaz; Grajower, Meir; Mazurski, Noa; Levy, Uriel

2018-03-01

We demonstrate the design, fabrication, and experimental characterization of a long range surface plasmon polariton waveguide that is compatible with complementary metal-oxide semiconductor backend technology. The structure consists of a thin aluminum strip embedded in amorphous silicon. This configuration offers a symmetric environment in which surface plasmon polariton modes undergo minimal loss. Furthermore, the plasmonic mode profile matches the modes of the dielectric (amorphous silicon) waveguide, thus allowing efficient coupling between silicon photonics and plasmonic platforms. The propagation length of the plasmonic waveguide was measured to be about 27 μm at the telecom wavelength around 1550 nm, in good agreement with numerical simulations. As such, the waveguide features both tight mode confinement and decent propagation length. On top of its photonic properties, placing a metal within the structure may also allow for additional functionalities such as photo-detection, thermo-optic tuning, and electro-optic control to be implemented.

Design of a Tunable, Room Temperature, Continuous-Wave Terahertz Source and Detector using Silicon Waveguides

DTIC Science & Technology

2008-01-30

that will use conventional diode- or hotomultiplier-tube-based optical detectors , which are xtremely sensitive . . HEATING AND FREE-CARRIER IMITATIONS...CONTRACT NUMBER IN-HOUSE Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides 5b. GRANT...B 261Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides T. Baehr-Jones,1,* M. Hochberg,1,3

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

PubMed

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si₃N₄) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si₃N₄ and the LN-Si₃N₄ waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Surface normal coupling to multiple-slot and cover-slotted silicon nanocrystalline waveguides and ring resonators

NASA Astrophysics Data System (ADS)

Covey, John; Chen, Ray T.

2014-03-01

Grating couplers are ideal for coupling into the tightly confined propagation modes of semiconductor waveguides. In addition, nonlinear optics has benefited from the sub-diffraction limit confinement of horizontal slot waveguides. By combining these two advancements, slot-based nonlinear optics with mode areas less than 0.02 μm2 can become as routine as twisting fiber connectors together. Surface normal fiber alignment to a chip is also highly desirable from time, cost, and manufacturing considerations. To meet these considerable design challenges, a custom genetic algorithm is created which, starting from purely random designs, creates a unique four stage grating coupler for two novel horizontal slot waveguide platforms. For horizontal multiple-slot waveguides filled with silicon nanocrystal, a theoretical fiber-towaveguide coupling efficiency of 68% is obtained. For thin silicon waveguides clad with optically active silicon nanocrystal, known as cover-slot waveguides, a theoretical fiber-to-waveguide coupling efficiency of 47% is obtained, and 1 dB and 3 dB theoretical bandwidths of 70 nm and 150 nm are obtained, respectively. Both waveguide platforms are fabricated from scratch, and their respective on-chip grating couplers are experimentally measured from a standard single mode fiber array that is mounted surface normally. The horizontal multiple-slot grating coupler achieved an experimental 60% coupling efficiency, and the horizontal cover-slot grating coupler achieved an experimental 38.7% coupling efficiency, with an extrapolated 1 dB bandwidth of 66 nm. This report demonstrates the promise of genetic algorithm-based design by reducing to practice the first large bandwidth vertical grating coupler to a novel silicon nanocrystal horizontal cover-slot waveguide.

Continuously tunable optical buffer with a dual silicon waveguide design.

PubMed

Horak, Peter; Stewart, Will; Loh, Wei H

2011-06-20

We propose a design for an optical buffer that comprises two coupled silicon waveguides, which is capable of generating a large continuously tunable change in the propagation delay time. The optical delay can be varied by more than 100% through varying the spacing between the waveguides.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

PubMed

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Total internal reflection-evanescent coupler for fiber-to-waveguide integration of planar optoelectric devices.

PubMed

Lu, Zhaolin; Prather, Dennis W

2004-08-01

We present a method for parallel coupling from a single-mode fiber, or fiber ribbon, into a silicon-on-insulator waveguide for integration with silicon optoelectronic circuits. The coupler incorporates the advantages of the vertically tapered waveguides and prism couplers, yet offers the flexibility of planar integration. The coupler can be fabricated by use of either wafer polishing technology or gray-scale photolithography. When optimal coupling is achieved in our experimental setup, the coupler can be packaged by epoxy bonding to form a fiber-waveguide parallel coupler or connector. Two-dimensional electromagnetic calculation predicts a coupling efficiency of 77% (- 1.14-dB insertion loss) for a silicon-to-silicon coupler with a uniform tunnel layer. The coupling efficiency is experimentally achieved to be 46% (-3.4-dB insertion loss), excluding the loss in silicon and the reflections from the input surface and the output facet.

Controlling temperature dependence of silicon waveguide using slot structure.

PubMed

Lee, Jong-Moo; Kim, Duk-Jun; Kim, Gwan-Ha; Kwon, O-Kyun; Kim, Kap-Joong; Kim, Gyungock

2008-02-04

We show that the temperature dependence of a silicon waveguide can be controlled well by using a slot waveguide structure filled with a polymer material. Without a slot, the amount of temperature-dependent wavelength shift for TE mode of a silicon waveguide ring resonator is very slightly reduced from 77 pm/ degrees C to 66 pm/ degrees C by using a polymer (WIR30-490) upper cladding instead of air upper cladding. With a slot filled with the same polymer, however, the reduction of the temperature dependence is improved by a pronounced amount and can be controlled down to -2 pm/ degrees C by adjusting several variables of the slot structure, such as the width of the slot between the pair of silicon wires, the width of the silicon wire pair, and the height of the silicon slab in our experiment. This measurement proves that a reduction in temperature dependence can be improved about 8 times more by using the slot structure.

Calculated coupling efficiency between an elliptical-core optical fiber and an optical waveguide over temperature

NASA Technical Reports Server (NTRS)

Tuma, Margaret L.; Weisshaar, Andreas; Li, Jian; Beheim, Glenn

1995-01-01

To determine the feasibility of coupling the output of a single-mode optical fiber into a single-mode rib waveguide in a temperature varying environment, a theoretical calculation of the coupling efficiency between the two was investigated. Due to the complex geometry of the rib guide, there is no analytical solution to the wave equation for the guided modes, thus, approximation and/or numerical techniques must be utilized to determine the field patterns of the guide. In this study, three solution methods were used for both the fiber and guide fields; the effective-index method (EIM), Marcatili's approximation, and a Fourier method. These methods were utilized independently to calculate the electric field profile of each component at two temperatures, 20 C and 300 C, representing a nominal and high temperature. Using the electric field profile calculated from each method, the theoretical coupling efficiency between an elliptical-core optical fiber and a rib waveguide was calculated using the overlap integral and the results were compared. It was determined that a high coupling efficiency can be achieved when the two components are aligned. The coupling efficiency was more sensitive to alignment offsets in the y direction than the x, due to the elliptical modal field profile of both components. Changes in the coupling efficiency over temperature were found to be minimal.

Polymer waveguides for electro-optical integration in data centers and high-performance computers.

PubMed

Dangel, Roger; Hofrichter, Jens; Horst, Folkert; Jubin, Daniel; La Porta, Antonio; Meier, Norbert; Soganci, Ibrahim Murat; Weiss, Jonas; Offrein, Bert Jan

2015-02-23

To satisfy the intra- and inter-system bandwidth requirements of future data centers and high-performance computers, low-cost low-power high-throughput optical interconnects will become a key enabling technology. To tightly integrate optics with the computing hardware, particularly in the context of CMOS-compatible silicon photonics, optical printed circuit boards using polymer waveguides are considered as a formidable platform. IBM Research has already demonstrated the essential silicon photonics and interconnection building blocks. A remaining challenge is electro-optical packaging, i.e., the connection of the silicon photonics chips with the system. In this paper, we present a new single-mode polymer waveguide technology and a scalable method for building the optical interface between silicon photonics chips and single-mode polymer waveguides.

Anti resonant reflecting optical waveguide structure based on oxidized porous silicon for label free bio sensing applications

NASA Astrophysics Data System (ADS)

Haji, L.; Hiraoui, M.; Lorrain, N.; Guendouz, M.

2012-03-01

In this letter we report on the use of an electrochemical process for the fabrication of anti resonant reflecting optical waveguide based on oxidized porous silicon. This method is known to allow the formation of various photonic structures (Bragg mirror, microcavity), thanks to the easy and in situ modulation of the porosity and thus of the refractive index. Planar anti resonant reflecting optical waveguide structure made from porous silicon is demonstrated to be very effective for low losses as compared to conventional resonant waveguide. Optical measurements carried out for TE and TM polarizations are reported and related to optical sensing.

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

NASA Astrophysics Data System (ADS)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a <100> wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Fabrication of thermal microphotonic sensors and sensor arrays

DOEpatents

Shaw, Michael J.; Watts, Michael R.; Nielson, Gregory N.

2010-10-26

A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.

Low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-infrared applications.

PubMed

Cho, Sang-Yeon; Soref, Richard A

2009-06-15

We report low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-IR applications. The composite modes in silicide ribbon waveguides offer a low-loss and highly confined mode profile, giving excellent plasmon waveguiding for long-wavelength applications. The calculated propagation loss of the composite long-range surface-plasmon polariton mode at a wavelength of 100 microm is 2.18 dB/cm with a mode height of less than 30 microm. The results presented provide important design guidelines for silicide/Si plasmon waveguides.

Passively aligned multichannel fiber-pigtailing of planar integrated optical waveguides

NASA Astrophysics Data System (ADS)

Kremmel, Johannes; Lamprecht, Tobias; Crameri, Nino; Michler, Markus

2017-02-01

A silicon device to simplify the coupling of multiple single-mode fibers to embedded single-mode waveguides has been developed. The silicon device features alignment structures that enable a passive alignment of fibers to integrated waveguides. For passive alignment, precisely machined V-grooves on a silicon device are used and the planar lightwave circuit board features high-precision structures acting as a mechanical stop. The approach has been tested for up to eight fiber-to-waveguide connections. The alignment approach, the design, and the fabrication of the silicon device as well as the assembly process are presented. The characterization of the fiber-to-waveguide link reveals total coupling losses of (0.45±0.20 dB) per coupling interface, which is significantly lower than the values reported in earlier works. Subsequent climate tests reveal that the coupling losses remain stable during thermal cycling but increases significantly during an 85°C/85 Rh-test. All applied fabrication and bonding steps have been performed using standard MOEMS fabrication and packaging processes.

Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications.

PubMed

Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

2016-03-04

Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

PubMed

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm². Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

SiN-assisted polarization-insensitive multicore fiber to silicon photonics interface

NASA Astrophysics Data System (ADS)

Poulopoulos, Giannis N.; Kalavrouziotis, Dimitrios; Mitchell, Paul; Macdonald, John R.; Bakopoulos, Paraskevas; Avramopoulos, Hercules

2015-06-01

We demonstrate a polarization-insensitive coupler interfacing multicore-fiber (MCF) to silicon waveguides. It comprises a 3D glass fanout transforming the circular MCF core-arrangement to linear and performing initial tapering, followed by a Spot-Size-Converter on the silicon chip. Glass waveguides are formed of multiple overlapped modification elements and appropriate offsetting thereof yields tapers with symmetric cross-section. The Spot-Size-Converter is an inverselytapered silicon waveguide with a tapered polymer overcladding where light is initially coupled, whereas phase-matching gradually shifts it towards the silicon core. Co-design of the glass fanout and Spot-Size-Converter obtains theoretical loss below 1dB for the overall Si-to-MCF transition in both polarizations.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

PubMed Central

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

Mechanical Kerr nonlinearities due to bipolar optical forces between deformable silicon waveguides.

PubMed

Ma, Jing; Povinelli, Michelle L

2011-05-23

We use an analytical method based on the perturbation of effective index at fixed frequency to calculate optical forces between silicon waveguides. We use the method to investigate the mechanical Kerr effect in a coupled-waveguide system with bipolar forces. We find that a positive mechanical Kerr coefficient results from either an attractive or repulsive force. An enhanced mechanical Kerr coefficient several orders of magnitude larger than the intrinsic Kerr coefficient is obtained in waveguides for which the optical mode approaches the air light line, given appropriate design of the waveguide dimensions.

Tiny surface plasmon resonance sensor integrated on silicon waveguide based on vertical coupling into finite metal-insulator-metal plasmonic waveguide.

PubMed

Lee, Dong-Jin; Yim, Hae-Dong; Lee, Seung-Gol; O, Beom-Hoan

2011-10-10

We propose a tiny surface plasmon resonance (SPR) sensor integrated on a silicon waveguide based on vertical coupling into a finite thickness metal-insulator-metal (f-MIM) plasmonic waveguide structure acting as a Fabry-Perot resonator. The resonant characteristics of vertically coupled f-MIM plasmonic waveguides are theoretically investigated and optimized. Numerical results show that the SPR sensor with a footprint of ~0.0375 μm2 and a sensitivity of ~635 nm/RIU can be designed at a 1.55 μm transmission wavelength.

Nanoparticle sorting in silicon waveguide arrays

NASA Astrophysics Data System (ADS)

Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

2017-08-01

This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

Supercontinuum generation in silicon waveguides relying on wave-breaking.

PubMed

Castelló-Lurbe, David; Silvestre, Enrique

2015-10-05

Four-wave-mixing processes enabled during optical wave-breaking (OWB) are exploited in this paper for supercontinuum generation. Unlike conventional approaches based on OWB, phase-matching is achieved here for these nonlinear interactions, and, consequently, new frequency production becomes more efficient. We take advantage of this kind of pulse propagation to obtain numerically a coherent octave-spanning mid-infrared supercontinuum generation in a silicon waveguide pumping at telecom wavelengths in the normal dispersion regime. This scheme shows a feasible path to overcome limits imposed by two-photon absorption on spectral broadening in silicon waveguides.

FDTD simulation of amorphous silicon waveguides for microphotonics applications

NASA Astrophysics Data System (ADS)

Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,

2017-05-01

In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.

Efficient channel-waveguide laser in Nd:GGG at 1.062 μm wavelength

NASA Astrophysics Data System (ADS)

Gerhardt, R.; Kleine-Börger, J.; Beilschmidt, L.; Frommeyer, M.; Dötsch, H.; Gather, B.

1999-08-01

Channel waveguide lasers in crystals of neodymium-doped gadolinium-gallium-garnet are realized. They are based on single-mode rib waveguides prepared by liquid phase epitaxy. By this growth technique the incorporation of certain impurities, which may cause severe quenching, is inevitable. The dominant quenching process could be identified and eliminated. Channel waveguides with extremely low losses, down to 0.25 dB/cm for both TE and TM modes, are fabricated by ion-beam etching. As a result, low thresholds of 5 mW and high slope efficiencies of 48% at the laser wavelength of 1.062 μm could be achieved when pumping at a wavelength of 807 nm.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Nanophotonic Devices in Silicon for Nonlinear Optics

DTIC Science & Technology

2010-10-15

record performance  Demonstration of world‟s lowest loss slot waveguides, made in a DOD-trusted foundry (BAE Systems)  Design study showing...highly-cited design study.  Design study on analog links using the above modulators.  Demonstration of the first silicon waveguides for the mid...Hochberg. Design of transmission line driven slot waveguide Mach-Zehnder interferometers and application to analog optical links. Optics Express 2010

Structural and optical studies of porous silicon buried waveguides: Effects of oxidation and pore filling using DR1 dyes

NASA Astrophysics Data System (ADS)

Charrier, J.; Kloul, M.; Pirasteh, P.; Bardeau, J.-F.; Guendouz, M.; Bulou, A.; Haji, L.

2007-11-01

This paper deals with the structural and optical properties of buried waveguides manufactured from mesoporous silicon films (as-formed porous silicon layers, after oxidation, after filling with active DR1 dyes). It is shown that the oxidation process only induced a weak morphology transformation. The 2D profiles of cross-sections of the waveguides by micro-Raman mapping were done in order to check the oxidation rate and to probe the DR1 filling of the layers. This latter appeared homogeneous but surprisingly is greater in the weaker porosity layer. The light propagation through these different waveguides was observed and losses were measured and analyzed. The losses decreased after oxidation but they increased after filling.

Silicon-on-insulator multimode-interference waveguide-based arrayed optical tweezers (SMART) for two-dimensional microparticle trapping and manipulation.

PubMed

Lei, Ting; Poon, Andrew W

2013-01-28

We demonstrate two-dimensional optical trapping and manipulation of 1 μm and 2.2 μm polystyrene particles in an 18 μm-thick fluidic cell at a wavelength of 1565 nm using the recently proposed Silicon-on-insulator Multimode-interference (MMI) waveguide-based ARrayed optical Tweezers (SMART) technique. The key component is a 100 μm square-core silicon waveguide with mm length. By tuning the fiber-coupling position at the MMI waveguide input facet, we demonstrate various patterns of arrayed optical tweezers that enable optical trapping and manipulation of particles. We numerically simulate the physical mechanisms involved in the arrayed trap, including the optical force, the heat transfer and the thermal-induced microfluidic flow.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Low-threshold ridge-waveguide 1.3-μm laser

NASA Astrophysics Data System (ADS)

Kortàn, J.; Nohavica, D.; Sarma, J.

1988-11-01

A description is given of the fabrication and of the main properties of 1.3-μm GaInAsP lasers with a ridge (rib) waveguide structure used for lateral confinement of transverse modes and of the current. Such lasers were made by the method of ion-beam etching and self-alignment photolithography. Narrow ridges (3-5 μm) formed in this way carried Ti-Au Schottky contacts. These lasers were simple to fabricate and their threshold currents were comparable with those in much more complex lasers with buried waveguide structures.

Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica

NASA Astrophysics Data System (ADS)

Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonström, Patrick; Kneissl, Michael

2016-04-01

The suitability of materials for deep ultraviolet (DUV) waveguides concerning transmittance, fabrication, and coupling properties is investigated and a fused silica core/ambient air cladding waveguide system is presented. This high refractive index contrast system has far better coupling efficiency especially for divergent light sources like LEDs and also a significantly smaller critical bending radius compared to conventional waveguide systems, as simulated by ray-tracing simulations. For the fabrication of 300-ffm-thick multimode waveguides a hydrouoric (HF) acid based wet etch process is compared to selective laser etching (SLE). In order to fabricate thick waveguides out of 300-ffm-thick silica wafers by HF etching, two masking materials, LPCVD silicon nitride and LPCVD poly silicon, are investigated. Due to thermal stress, the silicon nitride deposited wafers show cracks and even break. Using poly silicon as a masking material, no cracks are observed and deep etching in 50 wt% HF acid up to 180 min is performed. While the masked and unmasked silica surface is almost unchanged in terms of roughness, notching defects occur at the remaining polysilicon edge leading to jagged sidewalls. Using SLE, waveguides with high contour accuracy are fabricated and the DUV guiding properties are successfully demonstrated with propagation losses between 0.6 and 0:8 dB=mm. These values are currently limited by sidewall scattering losses.

Silicon-on-Sapphire Waveguides for Widely Tunable Coherent Mid-IR Sources

DTIC Science & Technology

2013-09-01

fabricated using a chrome mask. .......................................... 10 1 1. BACKGROUND The mid- infrared (IR) range between 3 m...leveraging existing sources in telecom and short-wave infrared (SWIR) bands. It has been demonstrated using silicon waveguides on silicon-on-silicon...reported [3]. The approach proposed under this project involves the four-wave mixing of a pump at a SWIR wavelength around 2 m and signals in the near

Transfer of micro and nano-photonic silicon nanomembrane waveguide devices on flexible substrates.

PubMed

Ghaffari, Afshin; Hosseini, Amir; Xu, Xiaochuan; Kwong, David; Subbaraman, Harish; Chen, Ray T

2010-09-13

This paper demonstrates transfer of optical devices without extra un-patterned silicon onto low-cost, flexible plastic substrates using single-crystal silicon nanomembranes. Employing this transfer technique, stacking two layers of silicon nanomembranes with photonic crystal waveguide in the first layer and multi mode interference couplers in the second layer is shown, respectively. This technique is promising to realize high density integration of multilayer hybrid structures on flexible substrates.

Copper nanorod array assisted silicon waveguide polarization beam splitter.

PubMed

Kim, Sangsik; Qi, Minghao

2014-04-21

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Monolithic coupling of a SU8 waveguide to a silicon photodiode

NASA Astrophysics Data System (ADS)

Nathan, M.; Levy, O.; Goldfarb, I.; Ruzin, A.

2003-12-01

We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 μm thick, and 20 μm wide SU8 waveguides were fabricated to overlap 40×180 μm2 photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photocurrent measurements. The overlap attenuation ranged from a minimum of 2.2 dB per mm overlap length to a maximum of about 3 dB/mm, comparing favorably with reported nonpolymeric waveguide-Si photodiode attenuations.

Discrete parametric band conversion in silicon for mid-infrared applications.

PubMed

Tien, En-Kuang; Huang, Yuewang; Gao, Shiming; Song, Qi; Qian, Feng; Kalyoncu, Salih K; Boyraz, Ozdal

2010-10-11

Silicon photonics has great potential for mid-wave-infrared applications. The dispersion of waveguide can be manipulated by waveguide dimension and cladding materials. Simulation shows that <3 μm wide conversion can be achieved by tuning the pump wavelength.

Non-degenerate two-photon absorption in silicon waveguides. Analytical and experimental study

DOE PAGES

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; ...

2015-06-22

We theoretically and experimentally investigate the nonlinear evolution of two optical pulses in a silicon waveguide. We provide an analytic solution for the weak probe wave undergoing non-degenerate two-photon absorption (TPA) from the strong pump. At larger pump intensities, we employ a numerical solution to study the interplay between TPA and photo-generated free carriers. We develop a simple and powerful approach to extract and separate out the distinct loss contributions of TPA and free-carrier absorption from readily available experimental data. Our analysis accounts accurately for experimental results in silicon photonic crystal waveguides.

Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation.

PubMed

Pafchek, R; Tummidi, R; Li, J; Webster, M A; Chen, E; Koch, T L

2009-02-10

A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement. Drop-port responses from weakly coupled ring resonators demonstrate propagation losses below 0.36 dB/cm for TE modes. This technique is also combined with "magic width" designs mitigating severe lateral radiation leakage for TM modes to achieve propagation loss values of 0.94 dB/cm. We discuss the fabrication process utilized to form these low-loss waveguides and implications for sensor devices in particular.

Analytical study of optical bistability in silicon-waveguide resonators.

PubMed

Rukhlenko, Ivan D; Premaratne, Malin; Agrawal, Govind P

2009-11-23

We present a theoretical model that describes accurately the nonlinear phenomenon of optical bistability in silicon-waveguide resonators but remains amenable to analytical results. Using this model, we derive a transcendental equation governing the intensity of a continuous wave transmitted through a Fabry-Perot resonator formed using a silicon-on-insulator waveguide. This equation reveals a dual role of free carriers in the formation of optical bistability in silicon. First, it shows that free-carrier absorption results in a saturation of the transmitted intensity. Second, the free-carrier dispersion and the thermo-optic effect may introduce phase shifts far exceeding those resulting from the Kerr effect alone, thus enabling one to achieve optical bistability in ultrashort resonators that are only a few micrometers long. Bistability can occur even when waveguide facets are not coated because natural reflectivity of the silicon- r interface can provide sufficient feedback. We find that it is possible to control the input-output characteristics of silicon-based resonators by changing the free-carrier lifetime using a reverse-biased p-n junction. We show theoretically that such a technique is suitable for realization of electronically assisted optical switching at a fixed input power and it may lead to silicon-based, nanometer-size, optical memories.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

CMOS-compatible 2-bit optical spectral quantization scheme using a silicon-nanocrystal-based horizontal slot waveguide

PubMed Central

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P. K. A.

2014-01-01

All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W−1/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems. PMID:25417847

CMOS-compatible 2-bit optical spectral quantization scheme using a silicon-nanocrystal-based horizontal slot waveguide.

PubMed

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P K A

2014-11-24

All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W(-1)/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems.

An optical microswitch chip integrated with silicon waveguides and touch-down electrostatic micromirrors

NASA Astrophysics Data System (ADS)

Jin, Young-Hyun; Seo, Kyoung-Sun; Cho, Young-Ho; Lee, Sang-Shin; Song, Ki-Chang; Bu, Jong-Uk

2004-12-01

We present an silicon-on-insulator (SOI) optical microswitch, composed of silicon waveguides and electrostatically actuated gold-coated silicon micromirrors integrated with laser diode (LD) receivers and photo diode (PD) transmitters. For a low switching voltage, we modify the conventional curved electrode microactuator into a new microactuator with touch-down beams. We fabricate the waveguides and the actuated micromirror using the inductively coupled plasma (ICP) etching process of SOI wafers. The fabricated microswitch operates at the switching voltage of 31.7 ± 4 V with the resonant frequency of 6.89 kHz. Compared to the conventional microactuator, the touch-down beam microactuator achieves 77.4% reduction of the switching voltage. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of 4.18 ± 0.25 dB. We discuss a feasible method to achieve the switching voltage lower than 10 V by reducing the residual stress in the insulation layers of touch-down beams to the level of 30 MPa. We also analyze the major source of micromirror loss, thereby presenting design guidelines for low-loss micromirror switches.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

PubMed

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.

PubMed

Zhu, Shiyang; Fang, Q; Yu, M B; Lo, G Q; Kwong, D L

2009-11-09

Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.

Flat-top MZI filters: a novel robust design based on MMI splitters

NASA Astrophysics Data System (ADS)

Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani; Aalto, Timo

2016-03-01

Multimode Interferometers (MMIs) are an attractive alternative to directional couplers, ensuring more relaxed tolerances to fabrication errors and broader operation bandwidth. The drawback is that only a limited discrete set of splitting ratios is achievable with MMIs of constant cross section. This issue clearly limits their use in flat-top interferometric filters, which design requires, in general, free choice of the splitting ratios. Here we show for the first time that it is possible to design 4-stage flat-top interferometers using only standard MMIs with 50:50 and 85:15 splitting ratios. The design approach is based on the representation of the system on the Bloch sphere. Flat-top interleavers with different free spectral ranges have been designed and fabricated on the silicon photonics platform of VTT, based on 3 μm thick rib and strip waveguides. Two different layouts have been explored: one where all components are collinear and a more compact one which elements have been folded in a spiral shape. All interleavers have been designed for TE polarization, and they work in a wavelength range comparable with the 100 nm bandwidth of the MMI splitters. Even though fabrication imperfections and non-ideal behaviour of both waveguide bends and MMIs led to reduced extinction compared to simulations, most devices show in-band extinction exceeding 15 dB. The in-band losses of the most central channels did not exceed 1.5 dB compared to the reference straight waveguide. The designed interleavers can be employed in cascaded configurations to achieve broadband and fabrication tolerant flat-top wavelength (de)multiplexers.

Broadband transverse magnetic pass polarizer with low insertion loss based on silicon nitride waveguide

NASA Astrophysics Data System (ADS)

Sharma, Tarun Kumar; Ranganath, Praveen; Nambiar, Siddharth; Selvaraja, Shankar Kumar

2018-03-01

A horizontally asymmetric transverse magnetic (TM) pass polarizer is presented. The device passes only TM mode and rejects transverse electric (TE) mode. The proposed device has an asymmetricity in the horizontal direction comprising a direction coupler region with a silicon waveguide, silicon nitride waveguide, and an air gap, all residing on silica. Between three equal width Si waveguides, we have one region filled with air and the other with SiN with unequal optimized widths. The device with its optimal dimensions yields an extremely low insertion loss (IL) of 0.16 dB for TM→TM, while TE is rejected by an IL of >48 dB. The proposed polarizer is operated between C&L bands with a high extinction ratio and broadband width of about 110 nm.

Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide.

PubMed

Wang, Ke-Yao; Foster, Mark A; Foster, Amy C

2015-06-15

Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.

Copper nanorod array assisted silicon waveguide polarization beam splitter

PubMed Central

Kim, Sangsik; Qi, Minghao

2014-01-01

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology. PMID:24787839

Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

NASA Astrophysics Data System (ADS)

Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

2016-05-01

We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

Two different ways for waveguides and optoelectronics components on top of C-MOS

NASA Astrophysics Data System (ADS)

Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.

2006-02-01

While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Buried anti resonant reflecting optical waveguide based on porous silicon material for an integrated Mach Zehnder structure

NASA Astrophysics Data System (ADS)

Hiraoui, M.; Guendouz, M.; Lorrain, N.; Haji, L.; Oueslati, M.

2012-11-01

A buried anti resonant reflecting optical waveguide for an integrated Mach Zehnder structure based on porous silicon material is achieved using a classical photolithography process. Three distinct porous silicon layers are then elaborated in a single step, by varying the porosity (thus the refractive index) and the thickness while respecting the anti-resonance conditions. Simulations and experimental results clearly show the antiresonant character of the buried waveguides. Significant variation of the reflectance and light propagation with different behavior depending on the polarization and the Mach Zehnder dimensions is obtained. Finally, we confirm the feasibility of this structure for sensing applications.

Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.

PubMed

Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M

2011-12-19

We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

PubMed

Feng, Ning-Ning; Feng, Dazeng; Liao, Shirong; Wang, Xin; Dong, Po; Liang, Hong; Kung, Cheng-Chih; Qian, Wei; Fong, Joan; Shafiiha, Roshanak; Luo, Ying; Cunningham, Jack; Krishnamoorthy, Ashok V; Asghari, Mehdi

2011-04-11

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate. © 2011 Optical Society of America

Mid-infrared materials and devices on a Si platform for optical sensing

PubMed Central

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Telecom to mid-infrared spanning supercontinuum generation in hydrogenated amorphous silicon waveguides using a Thulium doped fiber laser pump source.

PubMed

Dave, Utsav D; Uvin, Sarah; Kuyken, Bart; Selvaraja, Shankar; Leo, Francois; Roelkens, Gunther

2013-12-30

A 1,000 nm wide supercontinuum, spanning from 1470 nm in the telecom band to 2470 nm in the mid-infrared is demonstrated in a 800 nm x 220 nm 1 cm long hydrogenated amorphous silicon strip waveguide. The pump source was a picosecond Thulium doped fiber laser centered at 1950 nm. The real part of the nonlinear parameter of this waveguide at 1950 nm is measured to be 100 ± 10 W -1m-1, while the imaginary part of the nonlinear parameter is measured to be 1.2 ± 0.2 W-1m-1. The supercontinuum is stable over a period of at least several hours, as the hydrogenated amorphous silicon waveguides do not degrade when exposed to the high power picosecond pulse train.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Large On-Chip Amplification in Silicon via Forward Stimulated Brillouin Scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kittlaus, Eric; Shin, Heedeuk; Rakich, Peter

2015-10-15

Strong Brillouin coupling has only recently been realized in silicon using a new class of op- tomechanical waveguides that yield both optical and phononic con nement. Despite these major advances, appreciable Brillouin ampli cation has yet to be observed in silicon. Using new membrane- suspended silicon waveguide we report large Brillouin ampli cation for the rst time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net ampli cation. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and ampli ers in silicon.

Broadband athermal waveguides and devices for datacom and telecom applications

NASA Astrophysics Data System (ADS)

He, Liuqing; Guo, Yuhao; Han, Zhaohong; Wada, Kazumi; Kimerling, Lionel C.; Michel, Jurgen; Agarwal, Anuradha M.; Li, Guifang; Zhang, Lin

2018-02-01

The high temperature sensitivity of silicon material limits the applications of silicon-based micro-ring resonators in integrated photonics. To realize a low but broadband temperature-dependence-wavelength-shift (TDWS) micro-ring resonator, designing a broadband athermal waveguide becomes a significant task. In this work, we propose a broadband athermal waveguide which shows a low effective thermos-optical coefficient (TOC) of +/-1×10-6/K at 1400 nm to 1700 nm. The proposed waveguide shows low-loss performance of 0.01 dB/cm and stable broadband-athermal ability when it's applied in micro-ring resonators, and the optical loss of micro-ring resonator with a radius of 100 μm using this waveguide is 0.02 dB/cm.

Mid-infrared supercontinuum generation in tapered As2S3 chalcogenide planar waveguide

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Hu, Hongyu; Li, Wenbo; Dutta, Niloy K.

2016-10-01

We numerically demonstrate mid-infrared supercontinuum generation in a non-uniformly tapered chalcogenide planar waveguide. This planar rib waveguide of As2S3 glass on MgF2 is 2 cm long with increasing etch depth longitudinally to manage the total dispersion. This waveguide has zero dispersion at two wavelengths. The dispersion profile varies along the propagation distance, leading to continuous modification of the phase-matching condition for dispersive wave emission and enhancement of energy transfer efficiency between solitons and dispersive waves. Numerical simulations are conducted for secant input pulses at a wavelength of 1.55 μm with a width of 50 fs and peak power of 2 kW. Results show this proposed scheme significantly broadens the generated continuum, extending from ~1 to ~7 μm.

Sub-wavelength grating mode transformers in silicon slab waveguides.

PubMed

Bock, Przemek J; Cheben, Pavel; Schmid, Jens H; Delâge, André; Xu, Dan-Xia; Janz, Siegfried; Hall, Trevor J

2009-10-12

We report on several new types of sub-wavelength grating (SWG) gradient index structures for efficient mode coupling in high index contrast slab waveguides. Using a SWG, an adiabatic transition is achieved at the interface between silicon-on-insulator waveguides of different geometries. The SWG transition region minimizes both fundamental mode mismatch loss and coupling to higher order modes. By creating the gradient effective index region in the direction of propagation, we demonstrate that efficient vertical mode transformation can be achieved between slab waveguides of different core thickness. The structures which we propose can be fabricated by a single etch step. Using 3D finite-difference time-domain simulations we study the loss, polarization dependence and the higher order mode excitation for two types (triangular and triangular-transverse) of SWG transition regions between silicon-on-insulator slab waveguides of different core thicknesses. We demonstrate two solutions to reduce the polarization dependent loss of these structures. Finally, we propose an implementation of SWG structures to reduce loss and higher order mode excitation between a slab waveguide and a phase array of an array waveguide grating (AWG). Compared to a conventional AWG, the loss is reduced from -1.4 dB to < -0.2 dB at the slab-array interface.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings

DOE PAGES

Gehl, M.; Trotter, D.; Starbuck, A.; ...

2017-03-10

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Thus, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. We present the design and fabrication of compact siliconmore » photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm 2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. In addition, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.« less

Nonlinear optical interactions in silicon waveguides

NASA Astrophysics Data System (ADS)

Kuyken, B.; Leo, F.; Clemmen, S.; Dave, U.; Van Laer, R.; Ideguchi, T.; Zhao, H.; Liu, X.; Safioui, J.; Coen, S.; Gorza, S. P.; Selvaraja, S. K.; Massar, S.; Osgood, R. M.; Verheyen, P.; Van Campenhout, J.; Baets, R.; Green, W. M. J.; Roelkens, G.

2017-03-01

The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

Generation of 3.6  μm radiation and telecom-band amplification by four-wave mixing in a silicon waveguide with normal group velocity dispersion.

PubMed

Kuyken, B; Verheyen, P; Tannouri, P; Liu, X; Van Campenhout, J; Baets, R; Green, W M J; Roelkens, G

2014-03-15

Mid-infrared light generation through four-wave mixing-based frequency down-conversion in a normal group velocity dispersion silicon waveguide is demonstrated. A telecom-wavelength signal is down-converted across more than 1.2 octaves using a pump at 2190 nm in a 1 cm-long waveguide. At the same time, a 13 dB on-chip parametric gain of the telecom signal is obtained.

Optical properties of new wide heterogeneous waveguides with thermo optical shifters.

PubMed

De Leonardis, Francesco; Tsarev, Andrei V; Passaro, Vittorio M

2008-12-22

We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm x 35 microm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size approximately 10 microm. Local heater produces an efficient phase shifting by small temperature increase (DeltaT approximately 2K), switching power (< 40 mW) and switching time (< 10 micros). Mode optical losses are significantly decreased at high heating (DeltaT approximately 120 K).

Tailoring the dispersion behavior of silicon nanophotonic slot waveguides.

PubMed

Mas, Sara; Caraquitena, José; Galán, José V; Sanchis, Pablo; Martí, Javier

2010-09-27

We investigate the chromatic dispersion properties of silicon channel slot waveguides in a broad spectral region centered at ~1.5 μm. The variation of the dispersion profile as a function of the slot fill factor, i.e., the ratio between the slot and waveguide widths, is analyzed. Symmetric as well as asymmetric geometries are considered. In general, two different dispersion regimes are identified. Furthermore, our analysis shows that the zero and/or the peak dispersion wavelengths can be tailored by a careful control of the geometrical waveguide parameters including the cross-sectional area, the slot fill factor, and the slot asymmetry degree.

Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response.

PubMed

Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H

2008-03-15

We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.

Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement

NASA Astrophysics Data System (ADS)

Selvaraja, Shankar Kumar; Bogaerts, Wim; Van Thourhout, Dries

2011-04-01

Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance. The bend loss strongly depends on the bend radius, polarization, waveguide dimension and profile. In this paper, we present the effect of waveguide profile on the bend loss. We present waveguide profile improvement with optimized etch chemistry and the role of etch chemistry in adapting the etch profile of silicon is investigated. We experimentally demonstrate that by making the waveguide sidewalls vertical, the bend loss can be reduced up to 25% without affecting the propagation loss of the photonic wires. The bend loss of a 2 μm bend has been reduced from 0.039dB/90° bend to 0.028dB/90° bend by changing the sidewall angle from 81° to 90°, respectively. The propagation loss of 2.7 ± 0.1dB/cm and 3 ± 0.09dB/cm was observed for sloped and vertical photonic wires respectively was obtained.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

PubMed Central

TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

2017-01-01

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

Direct Wafer Bonding and Its Application to Waveguide Optical Isolators

PubMed Central

Mizumoto, Tetsuya; Shoji, Yuya; Takei, Ryohei

2012-01-01

This paper reviews the direct bonding technique focusing on the waveguide optical isolator application. A surface activated direct bonding technique is a powerful tool to realize a tight contact between dissimilar materials. This technique has the potential advantage that dissimilar materials are bonded at low temperature, which enables one to avoid the issue associated with the difference in thermal expansion. Using this technique, a magneto-optic garnet is successfully bonded on silicon, III-V compound semiconductors and LiNbO3. As an application of this technique, waveguide optical isolators are investigated including an interferometric waveguide optical isolator and a semileaky waveguide optical isolator. The interferometric waveguide optical isolator that uses nonreciprocal phase shift is applicable to a variety of waveguide platforms. The low refractive index of buried oxide layer in a silicon-on-insulator (SOI) waveguide enhances the magneto-optic phase shift, which contributes to the size reduction of the isolator. A semileaky waveguide optical isolator has the advantage of large fabrication-tolerance as well as a wide operation wavelength range. PMID:28817020

Fabrication of a Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Optical interconnects based on VCSELs and low-loss silicon photonics

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

PubMed

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Silicon photonics and challenges for fabrication

NASA Astrophysics Data System (ADS)

Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.

2017-03-01

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Relaxed tolerance adiabatic silicon coupler for high I/O port-density optical interconnects (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fard, Erfan; Norwood, Robert A.; Peyghambarian, Nasser N.; Koch, Thomas L.

2017-02-01

Widespread deployment of silicon photonics will benefit strongly from improved high-port-density interconnect solutions between chips, interposers, and other waveguide fabrics. We present an adiabatic silicon waveguide to polymer waveguide coupler design incorporating strong vertical asymmetries offering high efficiency, small footprint, and improved tolerance to lateral misalignment. The design incorporates a standard 450nm-wide silicon waveguide tapered down to 50nm over a distance of 200μm with a 1.6μm-thick polymer waveguide having a 4μm-wide core atop the taper. The coupler exhibits <0.1dB loss for both TE and TM modes based on 3-dimensional finite element modeling. Moreover, the modeled device exhibits less than 0.1dB excess loss with lateral misalignment of +/-2μm between polymer and silicon waveguide for TE mode, and 0.2dB excess loss with +/-1.6μm offset for the TM mode, and 1dB excess loss for both TE and TM modes with +/-2.7μm misalignment. This taper design should enable reduction in manufacturing costs due to a reduced on-chip footprint and the potential for lower-precision, higher-throughput assembly tools. The authors would like to acknowledge the support of AIM Photonics. This material is based on research sponsored by Air Force Research Laboratory under agreement number FA8650-15-2-5220. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of Air Force Research Laboratory or the U.S. Government.

Spectroscopy of high index contrast Yb:Ta2O5 waveguides for lasing applications

NASA Astrophysics Data System (ADS)

Aghajani, A.; Murugan, G. S.; Sessions, N. P.; Apostolopoulos, V.; Wilkinson, J. S.

2015-06-01

Ytterbium-doped waveguides are required for compact integrated lasers and Yb- doped Ta2O5 is a promising candidate material. The design, fabrication and spectroscopic characterisation of Yb:Ta2O5 rib waveguides are described. The peak absorption cross-section was measured to be 2.75×10-20 cm2 at 975 nm. The emission spectrum was found to have a fluorescence emission peak at a wavelength of 976 nm with a peak cross-section of 2.9×10-20 cm2 and a second broad fluorescence band spanning from 990 nm to 1090 nm. The excited- state life time was measured to be 260 μs.

Target molecules detection by waveguiding in a photonic silicon membrane

DOEpatents

Letant, Sonia E [Livermore, CA; Van Buuren, Anthony [Livermore, CA; Terminello, Louis [Danville, CA; Hart, Bradley R [Brentwood, CA

2006-12-26

Disclosed herein is a porous silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and calculate the concentration of bound target.

Target molecules detection by waveguiding in a photonic silicon membrane

DOEpatents

Letant, Sonia; Van Buuren, Anthony; Terminello, Louis

2004-08-31

Disclosed herein is a photonic silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls selectively bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and determine the concentration of bound target.

Novel Waveguide Architectures for Light Sources in Silicon Photonics

NASA Astrophysics Data System (ADS)

Tummidi, Ravi Sekhar

Of the many challenges which are threatening to derail the success trend set by Moore's Law, perhaps the most prominent one is the "Interconnect Bottleneck". The metallic interconnections which carry inter-chip and intra-chip signals are increasingly proving to be inadequate to carry the enormous amount of data due to band-width limitations, cross talk and increased latency. A silicon based optical interconnect is showing enormous promise to address this issue in a cost effective manner by leveraging the extremely matured CMOS fabrication infrastructure. An optical interconnect system consists of a low loss waveguide, modulator, photo detector and a light source. Of these the only component yet to be demonstrated in silicon is a CMOS compatible electrically pumped silicon based laser. The present work is our endeavor towards the goal of a practical light source in silicon. To this end we have focused our efforts on horizontal slot waveguide which consists of a nm thin low index silica layer sandwiched between two high index silicon layers. Such a structure provides an exceptionally high confinement for the TM-like mode in the thin silica slot. The shallow ridge profile of the waveguide allows in principle for lateral electrical access to the core of the waveguide for excitation of the slot embedded gain material like erbium or nano-crystal sensitized erbium using tunneling, polarization transfer or transport. Low losses in the proposed structure are paramount due to the low gain expectation (˜1dB/cm) from CMOS compatible gain media. This dissertation details the novel techniques conceived to mitigate the severe lateral radiation leakage loss of the TM-like mode in these waveguides and resonators using "Magic Widths" and "Magic Radii" designs. New fabrication techniques are discussed which were developed to achieve ultra-smooth waveguide surfaces to substantially reduce the scattering induced losses in the Silicon-on-Insulator (SOI) high index contrast system. This enabled us to achieve resonators with Qs of 1.6x106 for the TE-like mode in non-slot configurations and 3x105 for the TM-like mode in full slot configuration, the highest yet reported for this type of structure and close to our design requirements for a laser. Erbium was incorporated into the silica slot just 8.3 nm thick and photoluminescence was observed in full waveguide configuration. A simple phenomenological model based on spontaneous emission into a waveguide mode was developed, which predicted >10x Purcell enhancement of the luminescence decay in these slot waveguides even in the absence of a resonator, a result also yielded by a rigorous quantum electrodynamic analysis. These enhanced spontaneous emission rates were experimentally verified using time resolved photoluminescence decay and luminescence power measurements. The results so far indicate that these slot structures could be the enablers for very efficient LEDs due to the highly preferential characteristic of the spontaneous emission to go into the single guided mode. The future goal will be to harness this behavior for novel silicon photonic light sources.

Polymer waveguide grating sensor integrated with a thin-film photodetector

PubMed Central

Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

2014-01-01

This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III–V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing. PMID:24466407

Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

NASA Astrophysics Data System (ADS)

Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

2018-04-01

We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

Low-loss and energy efficient modulation in silicon photonic waveguides by adiabatic elimination scheme

NASA Astrophysics Data System (ADS)

Mrejen, Michael; Suchowski, Haim; Bachelard, Nicolas; Wang, Yuan; Zhang, Xiang

2017-07-01

High-speed Silicon Photonics calls for solutions providing a small footprint, high density, and minimum crosstalk, as exemplified by the recent development of integrated optical modulators. Yet, the performances of such modulators are hindered by intrinsic material losses, which results in low energy efficiency. Using the concept of Adiabatic Elimination, here, we introduce a scheme allowing for the low-loss modulation in densely packed waveguides. Our system is composed of two waveguides, whose coupling is mediated by an intermediate third waveguide. The signal is carried by the two outer modes, while the active control of their coupling is achieved via the intermediate dark mode. The modulation is performed by the manipulation of the central-waveguide mode index, leaving the signal-carrying waveguides unaffected by the loss. We discuss how Adiabatic Elimination provides a solution for mitigating signal losses and designing relatively compact, broadband, and energy-efficient integrated optical modulators.

Design and fabrication of hybrid SPP waveguides for ultrahigh-bandwidth low-penalty terabit-scale data transmission.

PubMed

Du, Jing; Wang, Jian

2017-11-27

Here we design and fabricate a hybrid surface plasmon polarities (SPP) waveguide on the silicon-on-insulator (SOI) photonics platform. The designed hybrid SPP waveguide is composed of a metal ridge, an air gap, and a silicon ridge. We simulate the mode characteristics in the structure and design the waveguide with a wide air gap that can simplify the fabrication process and maintain the advantages of the hybrid SPP mode. The performance of ultrahigh-bandwidth data transmission through the proposed waveguide is then investigated using 161 wavelength-division multiplexing (WDM) channels, each carrying a 11.2-Gbit/s orthogonal frequency-division multiplexing (OFDM) 16-ary quadrature amplitude modulation (16-QAM) signal. The bit-error rates (BERs) of all 161 channels are less than 1e-3. The favorable results show the prospect of on-chip optical interconnection using the proposed hybrid SPP waveguide.

Optical waveguide loop for planar trapping of blood cells and microspheres

NASA Astrophysics Data System (ADS)

Ahluwalia, Balpreet S.; Hellesø, Olav G.

2013-09-01

The evanescent field from a waveguide can be used to trap and propel a particle. An optical waveguide loop with an intentional gap at the center is used for planar transport and stable trapping of particles. The waveguide acts as a conveyor belt to trap and deliver spheres towards the gap. At the gap, the counter-diverging light fields hold the sphere at a fixed position. Numerical simulation based on the finite element method was performed in three dimensions using a computer cluster. The field distribution and optical forces for rib and strip waveguide designs are compared and discussed. The optical force on a single particle was computed for various positions of the particle in the gap. Simulation predicted stable trapping of particles in the gap. Depending on the gap separation (2-50 μm) a single or multiple spheres and red blood cells were trapped at the gap. Waveguides were made of tantalum pentaoxide material. The waveguides are only 180 nm thick and thus could be integrated with other functions on the chip.

Study on fabrication technology of silicon-based silica array waveguide grating

NASA Astrophysics Data System (ADS)

Sun, Yanjun; Dong, Lianhe; Leng, Yanbing

2009-05-01

Array waveguide grating (AWG) is an important plane optical element in dense wavelength division multiplex/demultiplex system. There are many virtue, channel quantity larger,lower loss, lower crosstalk, size smaller and high reliability etc. This article describs AWG fabrication technics utilizing IC(Integrated Circles) techniques, based on sixteen channel Silicon-Based Silica Array Waveguide Grating, put emphasis on discussing doping and deposition of waveguide core film,technics theory and interrelated parameter condition of photoetch and ion etching. Experiment result indicates that it depens on electrode structure, energy of radio-frequency electrode gas component, pressure ,flowing speed and substrate temperature by CVD depositing film .During depositing waveguide film by PE-CVD, the silicon is not reacted, When temperature becomes lower,it is reacted and it is easy to realize the control of film thickness and time with a result of film thickness uniformity reaching about 4% after optimizing deposition parameter and condition. We get the result of high etching speed rate, outline zoom, and side frame smooth by photoresist/Cr multiple mask and optimizing etching technics.

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

Methods of producing strain in a semiconductor waveguide and related devices

DOEpatents

Cox, Johathan Albert; Rakich, Peter Thomas

2016-02-16

Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated "X.sup.2"), while the second sections have a low X.sup.2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X.sup.2 properties when formed on a particular substrate, and/or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

NASA Astrophysics Data System (ADS)

Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

2018-06-01

A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

From SHG to mid-infrared SPDC generation in strained silicon waveguides

NASA Astrophysics Data System (ADS)

Castellan, Claudio; Trenti, Alessandro; Mancinelli, Mattia; Marchesini, Alessandro; Ghulinyan, Mher; Pucker, Georg; Pavesi, Lorenzo

2017-08-01

The centrosymmetric crystalline structure of Silicon inhibits second order nonlinear optical processes in this material. We report here that, by breaking the silicon symmetry with a stressing silicon nitride over-layer, Second Harmonic Generation (SHG) is obtained in suitably designed waveguides where multi-modal phase-matching is achieved. The modeling of the generated signal provides an effective strain-induced second order nonlinear coefficient of χ(2) = (0.30 +/- 0.02) pm/V. Our work opens also interesting perspectives on the reverse process, the Spontaneous Parametric Down Conversion (SPDC), through which it is possible to generate mid-infrared entangled photon pairs.

Hot-embossing fabrication of chalcogenide glasses rib waveguide for mid-infrared molecular sensing

NASA Astrophysics Data System (ADS)

Yan, Ting-Yang; Shen, Xiang; Wang, Rong-Ping; Wang, Guo-Xiang; Dai, Shi-Xun; Xu, Tie-Feng; Nie, Qiu-Hua

2017-02-01

Not Available Project supported by the National Natural Science Foundation of China (Grant No. 61377061), the Public Project of Zhejiang Province, China (Grant No. 2014C31146), and sponsored by K. C. Wong Magna Fund in Ningbo University, China.

Broadband telecom to mid-infrared supercontinuum generation in a dispersion-engineered silicon germanium waveguide.

PubMed

Ettabib, Mohamed A; Xu, Lin; Bogris, Adonis; Kapsalis, Alexandros; Belal, Mohammad; Lorent, Emerick; Labeye, Pierre; Nicoletti, Sergio; Hammani, Kamal; Syvridis, Dimitris; Shepherd, David P; Price, Jonathan H V; Richardson, David J; Petropoulos, Periklis

2015-09-01

We demonstrate broadband supercontinuum generation (SCG) in a dispersion-engineered silicon-germanium waveguide. The 3 cm long waveguide is pumped by femtosecond pulses at 2.4 μm, and the generated supercontinuum extends from 1.45 to 2.79 μm (at the -30  dB point). The broadening is mainly driven by the generation of a dispersive wave in the 1.5-1.8 μm region and soliton fission. The SCG was modeled numerically, and excellent agreement with the experimental results was obtained.

Silicon single mode waveguide modulator based upon switchable Bragg reflector

NASA Astrophysics Data System (ADS)

Azogui, Jonathan; Ramon, Yonathan; Businaro, Luca; Ciasca, Gabriele; Gerardino, Annamaria; Zalevsky, Zeev

2018-02-01

In this paper we present the development of an electro optical "Bragg" modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is "turned on" within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.

High-alignment-accuracy transfer printing of passive silicon waveguide structures.

PubMed

Ye, Nan; Muliuk, Grigorij; Trindade, Antonio Jose; Bower, Chris; Zhang, Jing; Uvin, Sarah; Van Thourhout, Dries; Roelkens, Gunther

2018-01-22

We demonstrate the transfer printing of passive silicon devices on a silicon-on-insulator target waveguide wafer. Adiabatic taper structures and directional coupler structures were designed for 1310 nm and 1600 nm wavelength coupling tolerant for ± 1 µm misalignment. The release of silicon devices from the silicon substrate was realized by underetching the buried oxide layer while protecting the back-end stack. Devices were successfully picked by a PDMS stamp, by breaking the tethers that kept the silicon coupons in place on the source substrate, and printed with high alignment accuracy on a silicon photonic target wafer. Coupling losses of -1.5 +/- 0.5 dB for the adiabatic taper at 1310 nm wavelength and -0.5 +/- 0.5 dB for the directional coupler at 1600 nm wavelength are obtained.

Low-chirp high-extinction-ratio modulator based on graphene-silicon waveguide.

PubMed

Yang, Longzhi; Hu, Ting; Hao, Ran; Qiu, Chen; Xu, Chao; Yu, Hui; Xu, Yang; Jiang, Xiaoqing; Li, Yubo; Yang, Jianyi

2013-07-15

We present a hybrid graphene-silicon waveguide, which consists of a lateral slot waveguide with three layers of graphene flakes inside. Through a theoretical analysis, an effective index variation for about 0.05 is found in the waveguide by applying a voltage on the graphene. We designed a Mach-Zehnder modulator based on this waveguide and demonstrated it can process signals nearly chirp-free. The calculation shows that the driving voltage is only 1 V even if the length of the arm is shortened to be 43.54 μm. An extinction up to 34.7 dB and a minimum chirp parameter of -0.006 are obtained. Its insertion loss is roughly -1.37 dB. This modulator consumes low power and has a small footprint. It can potentially be ultrafast as well as CMOS compatible.

Metal-capped silicon organic micro-ring electro-optical modulator (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zaki, Aya O.; Kirah, Khaled A.; Swillam, Mohamed A.

2017-02-01

An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of 12 dB for an applied peak to peak voltage of only 2 V and energy consumption of 1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.

Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

NASA Astrophysics Data System (ADS)

Hsieh, I.-Wei

In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon photonics. It is the author's hope that the thesis would convey to its readers the significance and potential of this exciting emerging technology.

Silicone polymer waveguide bridge for Si to glass optical fibers

NASA Astrophysics Data System (ADS)

Kruse, Kevin L.; Riegel, Nicholas J.; Middlebrook, Christopher T.

2015-03-01

Multimode step index polymer waveguides achieve high-speed, (<10 Gb/s) low bit-error-rates for onboard and embedded circuit applications. Using several multimode waveguides in parallel enables overall capacity to reach beyond 100 Gb/s, but the intrinsic bandwidth limitations due to intermodal dispersion limit the data transmission rates within multimode waveguides. Single mode waveguides, where intermodal dispersion is not present, have the potential to further improve data transmission rates. Single mode waveguide size is significantly less than their multimode counterparts allowing for greater density of channels leading to higher bandwidth capacity per layer. Challenges in implementation of embedded single mode waveguides within printed circuit boards involves mass production fabrication techniques to create precision dimensional waveguides, precision alignment tolerances necessary to launch a mode, and effective coupling between adjoining waveguides and devices. An emerging need in which single mode waveguides can be utilized is providing low loss fan out techniques and coupling between on-chip transceiver devices containing Si waveguide structures to traditional single mode optical fiber. A polymer waveguide bridge for Si to glass optical fibers can be implemented using silicone polymers at 1310 nm. Fabricated and measured prototype devices with modeling and simulation analysis are reported for a 12 member 1-D tapered PWG. Recommendations and designs are generated with performance factors such as numerical aperture and alignment tolerances.

A systematic optimization of design parameters in strained silicon waveguides to further enhance the linear electro-optic effect

NASA Astrophysics Data System (ADS)

Olivares, Irene; Angelova, Todora I.; Pinilla-Cienfuegos, Elena; Sanchis, Pablo

2016-05-01

The electro-optic Pockels effect may be generated in silicon photonics structures by breaking the crystal symmetry by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. In this work, the influence of the waveguide parameters on the strain distribution and its overlap with the optical mode to enhance the Pockels effect has been analyzed. The optimum waveguide structure have been designed based on the definition and quantification of a figure of merit. The fabrication of highly stressing SiN layers by PECVD has also been optimized to characterize the designed structures. The residual stress has been controlled during the growth process by analyzing the influence of the main deposition parameters. Therefore, two identical samples with low and high stress conditions were fabricated and electro-optically characterized to test the induced Pockels effect and the influence of carrier effects. Electro-optical modulation was only measured in the sample with the high stressing SiN layer that could be attributed to the Pockels effect. Nevertheless, the influence of carriers were also observed thus making necessary additional experiments to decouple both effects.

Optical gain at 650 nm from a polymer waveguide with dye-doped cladding

NASA Astrophysics Data System (ADS)

Reilly, M. A.; Coleman, B.; Pun, E. Y. B.; Penty, R. V.; White, I. H.; Ramon, M.; Xia, R.; Bradley, D. D. C.

2005-12-01

Signal amplification at the polymer optical fiber low-loss window of 650 nm is reported in an SU8 rib waveguide coated with Rhodamine-640 doped poly(methyl methacrylate). A signal beam is end-fired into the facet of a 7×100μm waveguide and amplified by top pumping of the 2-μm-thick cladding region with a pulsed pump source focused into a 9-mm-long stripe. A gain of 14dB and a minimum signal-to-noise ratio of around 2 dB are achieved in a 15-mm-long device with a low threshold pump intensity of 0.25μJ/mm2, which is an order of magnitude lower than previously reported.

Frequency non-degenerate phase-sensitive optical parametric amplification based on four-wave-mixing in width-modulated silicon waveguides.

PubMed

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng

2014-12-15

A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

PubMed

Zhang, Lin; Lin, Qiang; Yue, Yang; Yan, Yan; Beausoleil, Raymond G; Willner, Alan E

2012-01-16

We propose a novel silicon waveguide that exhibits four zero-dispersion wavelengths for the first time, to the best of our knowledge, with a flattened dispersion over a 670-nm bandwidth. This holds a great potential for exploration of new nonlinear effects and achievement of ultra-broadband signal processing on a silicon chip. As an example, we show that an octave-spanning supercontinuum assisted by dispersive wave generation can be obtained in silicon, over a wavelength range from 1217 to 2451 nm, almost from bandgap wavelength to half-bandgap wavelength. Input pulse is greatly compressed to 10 fs.

Low loss hollow-core waveguide on a silicon substrate

NASA Astrophysics Data System (ADS)

Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

2012-07-01

Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

Observation of an optical event horizon in a silicon-on-insulator photonic wire waveguide.

PubMed

Ciret, Charles; Leo, François; Kuyken, Bart; Roelkens, Gunther; Gorza, Simon-Pierre

2016-01-11

We report on the first experimental observation of an optical analogue of an event horizon in integrated nanophotonic waveguides, through the reflection of a continuous wave on an intense pulse. The experiment is performed in a dispersion-engineered silicon-on-insulator waveguide. In this medium, solitons do not suffer from Raman induced self-frequency shift as in silica fibers, a feature that is interesting for potential applications of optical event horizons. As shown by simulations, this also allows the observation of multiple reflections at the same time on fundamental solitons ejected by soliton fission.

Frequency-degenerate phase-sensitive optical parametric amplification based on four-wave mixing in graphene–silicon slot waveguide

NASA Astrophysics Data System (ADS)

Li, Zhen; Liu, Hongjun; Huang, Nan; Wang, Zhaolu; Han, Jing

2018-06-01

The phase-sensitive amplification process of a hybrid graphene–silicon (HyGS) slot waveguide with trilayers of graphene is investigated in this paper. Numerical simulation shows that a relatively high extinction ratio (42 dB) is achieved, because of the ultrahigh nonlinear coefficients, with a waveguide length of only 680 µm. In addition, the graphene layer provides the possibility of modulating the phase status and gain of the output signal. This study is expected to be highly beneficial to applications such as integrated optics and graphene-related active optical devices.

Methods and apparatus for mid-infrared sensing

DOEpatents

Lin, Pao Tai; Cai, Yan; Agarwal, Anuradha Murthy; Kimerling, Lionel C.

2015-06-02

A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum, to probe the absorption spectrum of fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Integrated resonant micro-optical gyroscope and method of fabrication

DOEpatents

Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM

2006-09-12

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

Compact and low cross-talk silicon-on-insulator crossing using a periodic dielectric waveguide.

PubMed

Feng, Junbo; Li, Qunqing; Fan, Shoushan

2010-12-01

We propose and experimentally demonstrate a compact, highly efficient, and negligible cross-talk silicon-on-insulator crossing using a periodic dielectric waveguide. The crossing occupies a footprint of less than 4 μm × 4 μm. Around 0.7 dB insertion loss and lower than -40 dB, cross talk was achieved experimentally over a broad wavelength range.

Silicon waveguide optical switch with embedded phase change material.

PubMed

Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M

2017-10-30

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

New dynamic silicon photonic components enabled by MEMS technology

NASA Astrophysics Data System (ADS)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

PubMed

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

PubMed Central

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-01-01

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

Optical study of Erbium-doped-porous silicon based planar waveguides

NASA Astrophysics Data System (ADS)

Najar, A.; Ajlani, H.; Charrier, J.; Lorrain, N.; Haesaert, S.; Oueslati, M.; Haji, L.

2007-06-01

Planar waveguides were formed from porous silicon layers obtained on P + substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er 3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.

Study of porous silicon optical waveguides impregnated with organic dyes

NASA Astrophysics Data System (ADS)

Pirasteh, P.; Charrier, J.; Dumeige, Y.; Chaillou, A.; Guendouz, M.; Haji, L.

2007-01-01

Planar waveguides were made using oxidised porous silicon layers. Then, they were impregnated with Congo Red or Disperse Red 1 dyes. Optical losses were investigated before and after impregnation. In our case, the losses of impregnated waveguides were always higher than those of non-impregnated ones. In order to achieve a better understanding of the origin of these losses, we not only studied the absorbance of solutions which would impregnate the porous layers but also the reflectance spectra of the obtained composite materials. According to the measurements, the increase in losses in the visible spectrum depends on the intrinsic absorption of the dye while in NIR, the increase would be due to an accumulation of dried dye on the surface of the waveguide which would give rise to the surface scattering losses.

Large tuning of birefringence in two strip silicon waveguides via optomechanical motion.

PubMed

Ma, Jing; Povinelli, Michelle L

2009-09-28

We present an optomechanical method to tune phase and group birefringence in parallel silicon strip waveguides. We first calculate the deformation of suspended, parallel strip waveguides due to optical forces. We optimize the frequency and polarization of the pump light to obtain a 9 nm deformation for an optical power of 20 mW. Widely tunable phase and group birefringence can be achieved by varying the pump power, with maximum values of 0.026 and 0.13, respectively. The giant phase birefringence allows linear to circular polarization conversion within 30 microm for a pump power of 67 mW. The group birefringence gives a tunable differential group delay of 6fs between orthogonal polarizations. We also evaluate the tuning performance of waveguides with different cross sections.

Photonic-chip-based all-optical ultra-wideband pulse generation via XPM and birefringence in a chalcogenide waveguide.

PubMed

Tan, Kang; Marpaung, David; Pant, Ravi; Gao, Feng; Li, Enbang; Wang, Jian; Choi, Duk-Yong; Madden, Steve; Luther-Davies, Barry; Sun, Junqiang; Eggleton, Benjamin J

2013-01-28

We report a photonic-chip-based scheme for all-optical ultra-wideband (UWB) pulse generation using a novel all-optical differentiator that exploits cross-phase modulation and birefringence in an As₂S₃ chalcogenide rib waveguide. Polarity-switchable UWB monocycles and doublets were simultaneously obtained with single optical carrier operation. Moreover, transmission over 40-km fiber of the generated UWB doublets is demonstrated with good dispersion tolerance. These results indicate that the proposed approach has potential applications in multi-shape, multi-modulation and long-distance UWB-over-fiber communication systems.

16-channel arrayed waveguide grating (AWG) demultiplexer design on SOI wafer for application in CWDM-PON

NASA Astrophysics Data System (ADS)

Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin

2015-01-01

Arrayed Waveguide Grating (AWG) functioning as a demultiplexer is designed on SOI platform with rib waveguide structure to be utilized in coarse wavelength division multiplexing-passive optical network (CWDM-PON) systems. Two design approaches; conventional and tapered configuration of AWG was developed with channel spacing of 20 nm that covers the standard transmission spectrum of CWDM ranging from 1311 nm to 1611 nm. The performance of insertion loss for tapered configuration offered the lowest insertion loss of 0.77 dB but the adjacent crosstalk gave non-significant relation for both designs. With average channel spacing of 20.4 nm, the nominal central wavelength of this design is close to the standard CWDM wavelength grid over 484 nm free spectrum range (FSR).

Guided-wave approaches to spectrally selective energy absorption

NASA Technical Reports Server (NTRS)

Stegeman, G. I.; Burke, J. J.

1987-01-01

Results of experiments designed to demonstrate spectrally selective absorption in dielectric waveguides on semiconductor substrates are reported. These experiments were conducted with three waveguides formed by sputtering films of PSK2 glass onto silicon-oxide layers grown on silicon substrates. The three waveguide samples were studied at 633 and 532 nm. The samples differed only in the thickness of the silicon-oxide layer, specifically 256 nm, 506 nm, and 740 nm. Agreement between theoretical predictions and measurements of propagation constants (mode angles) of the six or seven modes supported by these samples was excellent. However, the loss measurements were inconclusive because of high scattering losses in the structures fabricated (in excess of 10 dB/cm). Theoretical calculations indicated that the power distribution among all the modes supported by these structures will reach its steady state value after a propagation length of only 1 mm. Accordingly, the measured loss rates were found to be almost independent of which mode was initially excited. The excellent agreement between theory and experiment leads to the conclusion that low loss waveguides confirm the predicted loss rates.

CMOS-compatible spot-size converter for optical fiber to sub-μm silicon waveguide coupling with low-loss low-wavelength dependence and high tolerance to misalignment

NASA Astrophysics Data System (ADS)

Picard, Marie-Josée.; Latrasse, Christine; Larouche, Carl; Painchaud, Yves; Poulin, Michel; Pelletier, François; Guy, Martin

2016-03-01

One of the biggest challenges of silicon photonics is the efficient coupling of light between the sub-micron SiP waveguides and a standard optical fiber (SMF-28). We recently proposed a novel approach based on a spot-size converter (SSC) that fulfills this need. The SSC integrates a tapered silicon waveguide and a superimposed structure made of a plurality of rods of high index material, disposed in an array-like configuration and embedded in a cladding of lower index material. This superimposed structure defines a waveguide designed to provide an efficient adiabatic transfer, through evanescent coupling, to a 220 nm thick Si waveguide tapered down to a narrow tip on one side, while providing a large mode overlap to the optical fiber on the other side. An initial demonstration was made using a SSC fabricated with post-processing steps. Great coupling to a SMF-28 fiber with a loss of 0.6 dB was obtained for TEpolarized light at 1550 nm with minimum wavelength dependence. In this paper, SSCs designed for operation at 1310 and 1550 nm for TE/TM polarizations and entirely fabricated in a CMOS fab are presented.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides.

PubMed

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V; Yoon, Jongseung

2017-04-25

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF 4 :Yb 3+ ,Er 3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (∼40.1 mA/cm 2 ) and energy conversion efficiency (∼12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ∼13.6 mA/cm 2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption andmore » enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.« less

Measured Propagation Characteristics of Finite Ground Coplanar Waveguide on Silicon with a Thick Polyimide Interface Layer

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Papapolymerou, John; Tentzeris, Emmanouil M.; Williams, W. O. (Technical Monitor)

2002-01-01

Measured propagation characteristics of Finite Ground Coplanar (FGC) waveguide on silicon substrates with resistivities spanning 3 orders of magnitude (0.1 to 15.5 Ohm cm) and a 20 micron thick polyimide interface layer is presented as a function of the FGC geometry. Results show that there is an optimum FGC geometry for minimum loss, and silicon with a resistivity of 0.1 Ohm cm has greater loss than substrates with higher and lower resistivity. Lastly, substrates with a resistivity of 10 Ohm cm or greater have acceptable loss.

Optical Waveguides Written in Silicon with Femtosecond Laser

NASA Astrophysics Data System (ADS)

Pavlov, Ihor; Tokel, Onur; Pavlova, Svitlana; Kadan, Viktor; Makey, Ghaith; Turnali, Ahmed; Ilday, Omer

Silicon is one of the most widely used materials in modern technology, ranging from electronics and Si-photonics to microfluidic and sensor applications. Despite the long history of Si-based devices, and the strong demand for opto-electronical integration, 3D Si laser processing technology is still challenging. Recently, nanosecond-pulsed laser was used to fabricate embedded holographic elements in Si. However, until now, there was no demonstration of femtosecond-laser-written optical elements inside Si. In this paper, we present optical waveguides written deep inside Si with 1.5 um femtosecond laser. The laser beam, with 2 uJ pulse energy and 350 fs pulse duration focused inside Si sample, produces permanent modification of Si. By moving the lens along the beam direction we were able to produce optical waveguides up to 5 mm long. The diameter of the waveguide is measured to be 10 um. The waveguides were characterized with both optical shadowgraphy and far field imaging after CW light coupling. We observed nearly single mode propagation of light inside of the waveguide. The obtained difference of refractive index inside of the waveguide, is 2.5*10-4. TUBITAK Grant 113M930, TUBITAK Grant 114F256.

Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits.

PubMed

Dai, Daoxin; Mao, Mao

2015-11-02

An inverse taper on silicon is proposed and designed to realize an efficient mode converter available for the connection between multimode silicon nanophotonic integrated circuits and few-mode fibers. The present mode converter has a silicon-on-insulator inverse taper buried in a 3 × 3μm(2) SiN strip waveguide to deal with not only for the fundamental mode but also for the higher-order modes. The designed inverse taper enables the conversion between the six modes (i.e., TE(11), TE(21), TE(31), TE(41), TM(11), TM(12)) in a 1.4 × 0.22μm(2) multimode SOI waveguide and the six modes (like the LP(01), LP(11a), LP(11b) modes in a few-mode fiber) in a 3 × 3μm(2) SiN strip waveguide. The conversion efficiency for any desired mode is higher than 95.6% while any undesired mode excitation ratio is lower than 0.5%. This is helpful to make multimode silicon nanophotonic integrated circuits (e.g., the on-chip mode (de)multiplexers developed well) available to work together with few-mode fibers in the future.

A traveling-wave forward coupler design for a new accelerating mode in a silicon woodpile accelerator

DOE PAGES

Wu, Ziran; Lee, Chunghun H.; Wootton, Kent P.; ...

2016-03-01

Silicon woodpile photonic crystals provide a base structure that can be used to build a three-dimensional dielectric waveguide system for high-gradient laser driven acceleration. A new woodpile waveguide design that hosts a phase synchronous, centrally confined accelerating mode is proposed. Comparing with previously discovered silicon woodpile accelerating modes, this mode shows advantages in terms of better electron beam loading and higher achievable acceleration gradient. Several traveling-wave coupler design schemes developed for multi-cell RF cavity accelerators are adapted to the woodpile power coupler design for this new accelerating mode. Design of a forward coupled, highly efficient silicon woodpile accelerator is achieved.more » Simulation shows high efficiency of over 75% of the drive laser power coupled to this fundamental accelerating mode, with less than 15% backward wave scattering. The estimated acceleration gradient, when the coupler structure is driven at the damage threshold fluence of silicon at its operating 1.506 μm wavelength, can reach 185 MV/m. Lastly, a 17-layer woodpile waveguide structure was successfully fabricated, and the measured bandgap is in excellent agreement with simulation.« less

A traveling-wave forward coupler design for a new accelerating mode in a silicon woodpile accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ziran; Lee, Chunghun H.; Wootton, Kent P.

Silicon woodpile photonic crystals provide a base structure that can be used to build a three-dimensional dielectric waveguide system for high-gradient laser driven acceleration. A new woodpile waveguide design that hosts a phase synchronous, centrally confined accelerating mode is proposed. Comparing with previously discovered silicon woodpile accelerating modes, this mode shows advantages in terms of better electron beam loading and higher achievable acceleration gradient. Several traveling-wave coupler design schemes developed for multi-cell RF cavity accelerators are adapted to the woodpile power coupler design for this new accelerating mode. Design of a forward coupled, highly efficient silicon woodpile accelerator is achieved.more » Simulation shows high efficiency of over 75% of the drive laser power coupled to this fundamental accelerating mode, with less than 15% backward wave scattering. The estimated acceleration gradient, when the coupler structure is driven at the damage threshold fluence of silicon at its operating 1.506 μm wavelength, can reach 185 MV/m. Lastly, a 17-layer woodpile waveguide structure was successfully fabricated, and the measured bandgap is in excellent agreement with simulation.« less

Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Young, Paul G.

1993-01-01

Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.

High Power Broadband Multispectral Source on a Hybrid Silicon Chip

DTIC Science & Technology

2017-03-14

insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are made to the 1.5-µm...silicon-on-nitride-on- insulator (SONOI) waveguide platform are demonstrated and emit over 200 mW pulsed output power at room temperature. Improvements are...optical bandwidth of the erbium-doped-fiber-amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on- insulator

Cross-phase modulation-induced spectral broadening in silicon waveguides.

PubMed

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J

2016-01-11

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

PubMed Central

Chakravarty, Swapnajit; Yang, Chun-Ju; Wang, Zheng; Tang, Naimei; Fan, Donglei; Chen, Ray T.

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed. PMID:25829549

Small sensitivity to temperature variations of Si-photonic Mach-Zehnder interferometer using Si and SiN waveguides

NASA Astrophysics Data System (ADS)

Hiraki, Tatsurou; Fukuda, Hiroshi; Yamada, Koji; Yamamoto, Tsuyoshi

2015-03-01

We demonstrated a small sensitivity to temperature variations of delay-line Mach-Zehnder interferometer (DL MZI) on a Si photonics platform. The key technique is to balance a thermo-optic effect in the two arms by using waveguide made of different materials. With silicon and silicon nitride waveguides, the fabricated DL MZI with a free-spectrum range of ~40 GHz showed a wavelength shift of -2.8 pm/K with temperature variations, which is 24 times smaller than that of the conventional Si-waveguide DL MZI. We also demonstrated the decoding of the 40-Gbit/s differential phase-shift keying signals to on-off keying signals with various temperatures. The tolerable temperature variation for the acceptable power penalty was significantly improved due to the small wavelength shifts.

Flexible Transient Optical Waveguides and Surface-Wave Biosensors Constructed from Monocrystalline Silicon.

PubMed

Bai, Wubin; Yang, Hongjun; Ma, Yinji; Chen, Hao; Shin, Jiho; Liu, Yonghao; Yang, Quansan; Kandela, Irawati; Liu, Zhonghe; Kang, Seung-Kyun; Wei, Chen; Haney, Chad R; Brikha, Anlil; Ge, Xiaochen; Feng, Xue; Braun, Paul V; Huang, Yonggang; Zhou, Weidong; Rogers, John A

2018-06-26

Optical technologies offer important capabilities in both biological research and clinical care. Recent interest is in implantable devices that provide intimate optical coupling to biological tissues for a finite time period and then undergo full bioresorption into benign products, thereby serving as temporary implants for diagnosis and/or therapy. The results presented here establish a silicon-based, bioresorbable photonic platform that relies on thin filaments of monocrystalline silicon encapsulated by polymers as flexible, transient optical waveguides for accurate light delivery and sensing at targeted sites in biological systems. Comprehensive studies of the mechanical and optical properties associated with bending and unfurling the waveguides from wafer-scale sources of materials establish general guidelines in fabrication and design. Monitoring biochemical species such as glucose and tracking physiological parameters such as oxygen saturation using near-infrared spectroscopic methods demonstrate modes of utility in biomedicine. These concepts provide versatile capabilities in biomedical diagnosis, therapy, deep-tissue imaging, and surgery, and suggest a broad range of opportunities for silicon photonics in bioresorbable technologies. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tapered polysilicon core fibers for nonlinear photonics.

PubMed

Suhailin, Fariza H; Shen, Li; Healy, Noel; Xiao, Limin; Jones, Maxwell; Hawkins, Thomas; Ballato, John; Gibson, Ursula J; Peacock, Anna C

2016-04-01

We propose and demonstrate a novel approach to obtaining small-core polysilicon waveguides from the silicon fiber platform. The fibers were fabricated via a conventional drawing tower method and, subsequently, tapered down to achieve silicon core diameters of ∼1  μm, the smallest optical cores for this class of fiber to date. Characterization of the material properties have shown that the taper process helps to improve the local crystallinity of the silicon core, resulting in a significant reduction in the material loss. By exploiting the combination of small cores and low losses, these tapered fibers have enabled the first observation of nonlinear transmission within a polycrystalline silicon waveguide of any type. As the fiber drawing method is highly scalable, it opens a route for the development of low-cost and flexible nonlinear silicon photonic systems.

Direct-patterned optical waveguides on amorphous silicon films

DOEpatents

Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

2005-08-02

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

High temperature support apparatus and method of use for casting materials

DOEpatents

Clark, Roger F; Cliber, James A; Stoddard, Nathan G; Gerber, Jesse I; Roberts, Raymond J; Wilmerton, Mark A

2015-02-10

This invention relates to a system and a method of use for large ceramic member support and manipulation at elevated temperatures in non-oxidizing atmospheres, such as using carbon-carbon composite materials for producing high purity silicon in the manufacture of solar modules. The high temperature apparatus of this invention includes one or more support ribs, one or more cross braces in combination with the one or more support ribs, and a shaped support liner positionable upon the one or more support ribs and the one or more cross braces.

Femtosecond laser micromachining of waveguides in silicone-based hydrogel polymers.

PubMed

Ding, Li; Blackwell, Richard I; Künzler, Jay F; Knox, Wayne H

2008-06-10

By tightly focusing 27 fs laser pulses from a Ti:sapphire oscillator with 1.3 nJ pulse energy at 93 MHz repetition rate, we are able to fabricate optical waveguides inside hydrogel polymers containing approximately 36% water by weight. A tapered lensed fiber is used to couple laser light at a wavelength of 632.8 nm into these waveguides within a water environment. Strong waveguiding is observed due to large refractive index changes. A large waveguide propagation loss is found, and we show that this is caused by surface roughness which can be reduced by optimizing the waveguides.

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides

NASA Astrophysics Data System (ADS)

Lemonde, M.-A.; Meesala, S.; Sipahigil, A.; Schuetz, M. J. A.; Lukin, M. D.; Loncar, M.; Rabl, P.

2018-05-01

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Optical gain measurements in porous silicon planar waveguides codoped by erbium and ytterbium ions at 1.53 μm

NASA Astrophysics Data System (ADS)

Najar, Adel; Charrier, Joël; Lorrain, Nathalie; Haji, Lazhar; Oueslati, Mehrezi

2007-09-01

The on-off optical gain measurements as a function of the pump power were performed on porous silicon planar waveguides codoped by erbium and ytterbium ions. These measurements were obtained for different ratios of Yb concentration to Er concentration. The highest value of the gain was reached when the Yb concentration is three times higher than that of Er at a moderate 980nm pump power value equal to 70mW. Optical losses measurements have been performed on these waveguides and were equal to 2.1dB/cm and an internal gain of about 6.4dB/cm was obtained.

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures.

PubMed

Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

2016-06-25

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides.

PubMed

Lemonde, M-A; Meesala, S; Sipahigil, A; Schuetz, M J A; Lukin, M D; Loncar, M; Rabl, P

2018-05-25

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Porous silicon omnidirectional mirrors and distributed Bragg reflectors for planar waveguide applications

NASA Astrophysics Data System (ADS)

Xifré-Pérez, E.; Marsal, L. F.; Ferré-Borrull, J.; Pallarès, J.

2007-09-01

The use of omnidirectional mirrors (an special case of distributed Bragg reflectors) as cladding for planar waveguides is proposed and analyzed. The proposed structure is an all-porous silicon multilayer consisting of a core layer inserted between two omnidirectional mirrors. The transfer matrix method is applied for the modal analysis. The influence of the parameters of the waveguide structure on the guided modes is analyzed. These parameters are the layer thickness and number of periods of the omnidirectional mirror, and the refractive index and thickness of the core layer. Finally, the confinement of the omnidirectional mirror cladding is analyzed with respect to two other different distributed Bragg reflector claddings.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

PubMed

Vivien, Laurent; Polzer, Andreas; Marris-Morini, Delphine; Osmond, Johann; Hartmann, Jean Michel; Crozat, Paul; Cassan, Eric; Kopp, Christophe; Zimmermann, Horst; Fédéli, Jean Marc

2012-01-16

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.

PubMed

Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

2017-09-13

Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.

Phase sensitive amplification in integrated waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Schroeder, Jochen B.; Zhang, Youngbin; Husko, Chad A.; LeFrancois, Simon; Eggleton, Benjamin J.

2017-02-01

Phase sensitive amplification (PSA) is an attractive technology for integrated all-optical signal processing, due to it's potential for noiseless amplification, phase regeneration and generation of squeezed light. In this talk I will review our results on implementing four-wave-mixing based PSA inside integrated photonic devices. In particular I will discuss PSA in chalcogenide ridge waveguides and silicon slow-light photonic crystals. We achieve PSA in both pump- and signal-degenerate schemes with maximum extinction ratios of 11 (silicon) and 18 (chalcogenide) dB. I will further discuss the influence of two-photon absorption and free carrier effects on the performance of silicon-based PSAs.

Silicon cross-connect filters using microring resonator coupled multimode-interference-based waveguide crossings.

PubMed

Xu, Fang; Poon, Andrew W

2008-06-09

We report silicon cross-connect filters using microring resonator coupled multimode-interference (MMI) based waveguide crossings. Our experiments reveal that the MMI-based cross-connect filters impose lower crosstalk at the crossing than the conventional cross-connect filters using plain crossings, while offering a nearly symmetric resonance line shape in the drop-port transmission. As a proof-of-concept for cross-connection applications, we demonstrate on a silicon-on-insulator substrate (i) a 4-channel 1 x 4 linear-cascaded MMI-based cross-connect filter, and (ii) a 2-channel 2 x 2 array-cascaded MMI-based cross-connect filter.

Integrated optical components in thin films of polymers

NASA Technical Reports Server (NTRS)

Sarkisov, Sergey; Abdeldayem, Hossin; Venkateswarlu, Putcha; Teague, Zedric

1995-01-01

The results will be reported on the study of integrated optical components based on nonlinear optical polymeric films. Polymers poly(methyl methacrylate) (PMMA) and polyimide (PI) doped with organic laser dyes 4-dicyanomethylene-2-methyl-6-p dimethylaminostyryl-4H pyran (DCM) and 1, 3, 5, 7, 8 - pentamethyl-2,6 -diethyl-pyrromethene -BF2-complex (Pyrommethene 567, PM-567) were selected as materials for light guiding films. Additionally, UV polymerized polydiacetylene (PDA) on glass substrate was used as a waveguide material. Optical waveguides were fabricated using spin coating of preoxidized silicon wafers (1.5 micrometer silicon oxide layer) with organic dye/polymer solution followed by soft baking. the modes in slab waveguides were studied using prism coupling techniques. Measured values of mode coupling angles in multimode waveguides were used to calculate film thickness and refractive index for different polarizations. Refractive index anisotropy was found in PDA waveguide. The optimal conditions of spin coating for single mode waveguide fabrication were estimated. Propagation losses were measured by collecting the light scattered from the trace of a propagating mode either by scanning photo detector or by CCD camera. Different types of light coupling techniques were used including end-dire coupling, prism and grating coupling. Mechanical printing technique was developed for coupling grating fabrication resulting in gratings with 4% diffraction efficiency. The gratings demonstrated good stability with diffraction efficiency relaxation rate 2.4 dB/hour at a temperature approximately 15-20 C below glass transition point. Dye doped waveguides were transversally pumped with frequency doubled Nd:YAG Q-switched laser producing intensive light emission with apparent 6 kW/sq cm pump threshold and spectrum narrowing near 617 nm peak in the case of DCM doped waveguide. PM-567 doped waveguide pumped with CW Ar(+) laser (514 nm wavelength) far below threshold (0.1 W/sq.cm pump power) demonstrated emission spectrum narrowing near 616 nm peak with 18% power conversion slope efficiency. In this case emission spectrum modification was caused by the enhanced light absorption along the direction of propagating waveguide modes. Changing length, thickness, and other morphlogical waveguide parameters one can modify emission spectrum in predictable direction. The results show that polymeric waveguides, especially based on high temperature polymers such as Pl, can be used to produce a varietiy of active and passive silicon compatible integrated optical components for aerospace applications.

Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

NASA Technical Reports Server (NTRS)

Dimov, Fedor (Inventor); Ai, Jun (Inventor)

2015-01-01

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experimentmore » showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.« less

Alpha Radiation Effects on Silicon Oxynitride Waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morichetti, Francesco; Grillanda, Stefano; Manandhar, Sandeep

2016-09-21

Photonic technologies are today of great interest for use in harsh environments, such as outer space, where they can potentially replace current communication systems based on radiofrequency components. However, very much alike to electronic devices, the behavior of optical materials and circuits can be strongly altered by high-energy and high-dose ionizing radiations. Here, we investigate the effects of alpha () radiation with MeV-range energy on silicon oxynitride (SiON) optical waveguides. Irradiation with a dose of 5×1015 cm-2 increases the refractive index of the SiON core by nearly 10-2, twice as much that of the surrounding silica cladding, leading to amore » significant increase of the refractive index contrast of the waveguide. The higher mode confinement induced by -radiation reduces the loss of tightly bent waveguides. We show that this increases the quality factor of microring resonators by 20%, with values larger than 105 after irradiation.« less

Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces

NASA Astrophysics Data System (ADS)

Long, Yun; Wang, Jian

2014-06-01

Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide (``controlling'' waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the ``controlling'' waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

Extremely small polarization beam splitter based on a multimode interference coupler with a silicon hybrid plasmonic waveguide.

PubMed

Guan, Xiaowei; Wu, Hao; Shi, Yaocheng; Dai, Daoxin

2014-01-15

A novel polarization beam splitter (PBS) with an extremely small footprint is proposed based on a multimode interference (MMI) coupler with a silicon hybrid plasmonic waveguide. The MMI section, covered with a metal strip partially, is designed to achieve mirror imaging for TE polarization. On the other hand, for TM polarization, there is almost no MMI effect since the higher-order TM modes are hardly excited due to the hybrid plasmonic effect. With this design, the whole PBS including the 1.1 μm long MMI section as well as the output section has a footprint as small as ∼1.8 μm×2.5 μm. Besides, the fabrication process is simple since the waveguide dimension is relatively large (e.g., the input/output waveguides widths w ≥300 nm and the MMI width w(MMI)=800 nm). Numerical simulations show that the designed PBS has a broad band of ∼80 nm for an ER >10 dB as well as a large fabrication tolerance to allow a silicon core width variation of -30 nm<Δw<50 nm and a metal strip width variation of -200 nm<Δw(m)<0.

Fabrication of raised and inverted SU8 polymer waveguides

NASA Astrophysics Data System (ADS)

Holland, Anthony S.; Mitchell, Arnan; Balkunje, Vishal S.; Austin, Mike W.; Raghunathan, Mukund K.

2005-01-01

Polymer films with high optical transmission have been investigated for making optical devices for several years. SU8 photoresist and optical adhesives have been investigated for use as thin films for optical devices, not what they were originally designed for. Optical adhesives are typically a one component thermoset polymer and are convenient to use for making thin film optical devices such as waveguides. They are prepared in minutes as thin films unlike SU8, which has to be carefully thermally cured over several hours for optimum results. However SU8 can be accurately patterned to form the geometry of structures required for single mode optical waveguides. SU8 in combination with the lower refractive index optical adhesive films such as UV15 from Master Bond are used to form single and multi mode waveguides. SU8 is photopatternable but we have also used dry etching of the SU8 layer or the other polymer layers e.g. UV15 to form the ribs, ridges or trenches required to guide single modes of light. Optical waveguides were also fabricated using only optical adhesives of different refractive indices. The resolution obtainable is poorer than with SU8 and hence multi mode waveguides are obtained. Loss measurements have been obtained for waveguides of different geometries and material combinations. The process for making polymer waveguides is demonstrated for making large multi mode waveguides and microfluidic channels by scaling the process up in size.

Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

NASA Astrophysics Data System (ADS)

Fohrmann, Lena Simone; Sommer, Gerrit; Pitruzzello, Giampaolo; Krauss, Thomas F.; Petrov, Alexander Yu.; Eich, Manfred

2017-09-01

Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC) mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

Process development for waveguide chemical sensors with integrated polymeric sensitive layers

NASA Astrophysics Data System (ADS)

Amberkar, Raghu; Gao, Zhan; Park, Jongwon; Henthorn, David B.; Kim, Chang-Soo

2008-02-01

Due to the proper optical property and flexibility in the process development, an epoxy-based, high-aspect ratio photoresist SU-8 is now attracting attention in optical sensing applications. Manipulation of the surface properties of SU-8 waveguides is critical to attach functional films such as chemically-sensitive layers. We describe a new integration process to immobilize fluorescence molecules on SU-8 waveguide surface for application to intensity-based optical chemical sensors. We use two polymers for this application. Spin-on, hydrophobic, photopatternable silicone is a convenient material to contain fluorophore molecules and to pattern a photolithographically defined thin layer on the surface of SU-8. We use fumed silica powders as an additive to uniformly disperse the fluorophores in the silicone precursor. In general, additional processes are not critically required to promote the adhesion between the SU-8 and silicone. The other material is polyethylene glycol diacrylate (PEGDA). Recently we demonstrated a novel photografting method to modify the surface of SU-8 using a surface bound initiator to control its wettability. The activated surface is then coated with a monomer precursor solution. Polymerization follows when the sample is exposed to UV irradiation, resulting in a grafted PEGDA layer incorporating fluorophores within the hydrogel matrix. Since this method is based the UV-based photografting reaction, it is possible to grow off photolithographically defined hydrogel patterns on the waveguide structures. The resulting films will be viable integrated components in optical bioanalytical sensors. This is a promising technique for integrated chemical sensors both for planar type waveguide and vertical type waveguide chemical sensors.

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

PubMed

Li, Chenlei; Dai, Daoxin

2017-11-01

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

Design and analysis of a silicon-based antiresonant reflecting optical waveguide chemical sensor

NASA Astrophysics Data System (ADS)

Remley, Kate A.; Weisshaar, Andreas

1996-08-01

The design of a silicon-based antiresonant reflecting optical waveguide (ARROW) chemical sensor is presented, and its theoretical performance is compared with that of a conventional structure. The use of an ARROW structure permits incorporation of a thick guiding region for efficient coupling to a single-mode fiber. A high-index overlay is added to fine tune the sensitivity of the ARROW chemical sensor. The sensitivity of the sensor is presented, and design trade-offs are discussed.

Silicon photonic IC embedded optical-PCB for high-speed interconnect application

NASA Astrophysics Data System (ADS)

Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

2018-02-01

Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

Dielectric Metasurface as a Platform for Spatial Mode Conversion in Nanoscale Waveguides.

PubMed

Ohana, David; Desiatov, Boris; Mazurski, Noa; Levy, Uriel

2016-12-14

We experimentally demonstrate a nanoscale mode converter that performs coupling between the first two transverse electric-like modes of a silicon-on-insulator waveguide. The device operates by introducing a nanoscale periodic perturbation in its effective refractive index along the propagation direction and a graded effective index profile along its transverse direction. The periodic perturbation provides phase matching between the modes, while the graded index profile, which is realized by the implementation of nanoscale dielectric metasurface consisting of silicon features that are etched into the waveguide taking advantage of the effective medium concept, provides the overlap between the modes. Following the device design and numerical analysis using three-dimensional finite difference time domain simulations, we have fabricated the device and characterized it by directly measuring the modal content using optical imaging microscopy. From these measurements, the mode purity is estimated to be 95% and the transmission relative to an unperturbed strip waveguide is as high as 88%. Finally, we extend this approach to accommodate for the coupling between photonic and plasmonic modes. Specifically, we design and numerically demonstrate photonic to plasmonic mode conversion in a hybrid waveguide in which photonic and surface plasmon polariton modes can be guided in the silicon core and in the silicon/metal interface, respectively. The same method can also be used for coupling between symmetric and antisymmetric plasmonic modes in metal-insulator-metal or insulator-metal-insulator structures. On the basis of the current demonstration, we believe that such nanoscale dielectric metasurface-based mode converters can now be realized and become an important building block in future nanoscale photonic and plasmonic devices. Furthermore, the demonstrated platform can be used for the implementation of other chip scale components such as splitters, combiners couplers, and more.

Polarization-dependent coupling between a polarization-independent high-index-contrast subwavelength grating and waveguides

NASA Astrophysics Data System (ADS)

Katayama, Takeo; Ito, Jun; Kawaguchi, Hitoshi

2016-07-01

We investigated the optical coupling between a polarization-independent high-index-contrast subwavelength grating (HCG) and two orthogonal in-plane waveguides. We fabricated the HCG with waveguides on a silicon-on-insulator substrate and demonstrated that a waveguide with a strong output is switched by changing the polarization of light injected into the HCG. The light coupled more strongly to the waveguide in the direction perpendicular to the polarization of the incident light than to that in the parallel direction. If this waveguide-coupled HCG is incorporated into a polarization bistable vertical-cavity surface-emitting laser (VCSEL), the output waveguide can be switched by changing the lasing polarization of the VCSEL.

Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes

NASA Astrophysics Data System (ADS)

Hsiao, Yi-Hua; Iwamoto, Satoshi; Arakawa, Yasuhiko

2013-04-01

We designed silicon photonic crystal (PhC) waveguides (WGs) for efficient silicon Raman amplifiers and lasers. We adopted narrow-width WGs to utilize two symmetric transvers-electric-like (TE-like) guided modes, which permit efficient external coupling for both the pump and Stokes waves. Modifying the size and shape of air holes surrounding the line-defect WG structures could tune the frequency difference between these two modes, at the Brillouin-zone edge, to match the Raman shift of silicon. Thus, small group velocities are also available both for pump and Stokes waves simultaneously, which results in a large enhancement of Raman gain. The enhancement factor of the Raman gain in the designed structure is more than 100 times that reported previously.

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Permanent fine tuning of silicon microring devices by femtosecond laser surface amorphization and ablation.

PubMed

Bachman, Daniel; Chen, Zhijiang; Fedosejevs, Robert; Tsui, Ying Y; Van, Vien

2013-05-06

We demonstrate the fine tuning capability of femtosecond laser surface modification as a permanent trimming mechanism for silicon photonic components. Silicon microring resonators with a 15 µm radius were irradiated with single 400 nm wavelength laser pulses at varying fluences. Below the laser ablation threshold, surface amorphization of the crystalline silicon waveguides yielded a tuning rate of 20 ± 2 nm/J · cm(-2)with a minimum resonance wavelength shift of 0.10nm. Above that threshold, ablation yielded a minimum resonance shift of -1.7 nm. There was some increase in waveguide loss for both trimming mechanisms. We also demonstrated the application of the method by using it to permanently correct the resonance mismatch of a second-order microring filter.

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrauwen, Jonathan; Thourhout, Dries van; Baets, Roel

Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300 deg. C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300 deg. C. We presentmore » elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.« less

SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

DTIC Science & Technology

2010-06-08

DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES Presented at Mirror Technology Days, Boulder...coatings. 15. SUBJECT TERMS Mirrors , structures, silicon carbide, design, inserts, coatings, pockets, ribs, bonding, threads 16. SECURITY...Prescribed by ANSI Std. 239.18 purify protect transport SiC Design Guide Manufacture of Silicon Carbide Products Mirror Technology Days June 7 to 9, 2010

Multi-octave spectral beam combiner on ultra-broadband photonic integrated circuit platform.

PubMed

Stanton, Eric J; Heck, Martijn J R; Bovington, Jock; Spott, Alexander; Bowers, John E

2015-05-04

We present the design of a novel platform that is able to combine optical frequency bands spanning 4.2 octaves from ultraviolet to mid-wave infrared into a single, low M2 output waveguide. We present the design and realization of a key component in this platform that combines the wavelength bands of 350 nm - 1500 nm and 1500 nm - 6500 nm with demonstrated efficiency greater than 90% in near-infrared and mid-wave infrared. The multi-octave spectral beam combiner concept is realized using an integrated platform with silicon nitride waveguides and silicon waveguides. Simulated bandwidth is shown to be over four octaves, and measured bandwidth is shown over two octaves, limited by the availability of sources.

Multipurpose silicon photonics signal processor core.

PubMed

Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

2017-09-21

Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.

PubMed

Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H

2016-06-08

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms.

Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths.

PubMed

Porcel, Marco A G; Schepers, Florian; Epping, Jörn P; Hellwig, Tim; Hoekman, Marcel; Heideman, René G; van der Slot, Peter J M; Lee, Chris J; Schmidt, Robert; Bratschitsch, Rudolf; Fallnich, Carsten; Boller, Klaus-J

2017-01-23

We demonstrate supercontinuum generation in stoichiometric silicon nitride (Si₃N₄ in SiO₂) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal pulse energy of 1.4 nJ and a waveguide with 1.0 µm × 0.9 µm cross section, designed for anomalous dispersion across the 1500 nm telecommunication range, the output spectrum extends from the visible, at around 526 nm, up to the mid-infrared, at least to 2.6 µm, the instrumental limit of our detection. This output spans more than 2.2 octaves (454 THz at the -30 dB level). The measured output spectra agree well with theoretical modeling based on the generalized nonlinear Schrödinger equation. The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides.

Planar waveguide integrated spatial filter array

NASA Astrophysics Data System (ADS)

Ai, Jun; Dimov, Fedor; Lyon, Richard; Rakuljic, Neven; Griffo, Chris; Xia, Xiaowei; Arik, Engin

2013-09-01

An innovative integrated spatial filter array (iSFA) was developed for the nulling interferometer for the detection of earth-like planets and life beyond our solar system. The coherent iSFA comprised a 2D planar lightwave circuit (PLC) array coupled with a pair of 2D lenslet arrays in a hexagonal grid to achieve the optimum fill factor and throughput. The silica-on-silicon waveguide mode field diameter and numerical aperture (NA) were designed to match with the Airy disc and NA of the microlens for optimum coupling. The lenslet array was coated with a chromium pinhole array at the focal plane to pass the single-mode waveguide but attenuate the higher modes. We assembled a 32 by 30 array by stacking 32 chips that were produced by photolithography from a 6-in. silicon wafer. Each chip has 30 planar waveguides. The PLC array is inherently polarization-maintaining (PM) and requires much less alignment in contrast to a fiber array, where each PM fiber must be placed individually and oriented correctly. The PLC array offers better scalability than the fiber bundle array for large arrays of over 1,000 waveguides.

Optical bio-chemical sensors on SNOW ring resonators.

PubMed

Khorasaninejad, Mohammadreza; Clarke, Nigel; Anantram, M P; Saini, Simarjeet Singh

2011-08-29

In this paper, we propose and analyze novel ring resonator based bio-chemical sensors on silicon nanowire optical waveguide (SNOW) and show that the sensitivity of the sensors can be increased by an order of magnitude as compared to silicon-on-insulator based ring resonators while maintaining high index contrast and compact devices. The core of the waveguide is hollow and allows for introduction of biomaterial in the center of the mode, thereby increasing the sensitivity of detection. A sensitivity of 243 nm/refractive index unit (RIU) is achieved for a change in bulk refractive index. For surface attachment, the sensor is able to detect monolayer attachments as small as 1 Å on the surface of the silicon nanowires.

Optical bio-chemical sensors on SNOW ring resonators

NASA Astrophysics Data System (ADS)

Khorasaninejad, Mohammadreza; Clarke, Nigel; Anantram, M. P.; Singh Saini, Simarjeet

2011-08-01

In this paper, we propose and analyze novel ring resonator based bio-chemical sensors on silicon nanowire optical waveguide (SNOW) and show that the sensitivity of the sensors can be increased by an order of magnitude as compared to silicon-on-insulator based ring resonators while maintaining high index contrast and compact devices. The core of the waveguide is hollow and allows for introduction of biomaterial in the center of the mode, thereby increasing the sensitivity of detection. A sensitivity of 243 nm/refractive index unit (RIU) is achieved for a change in bulk refractive index. For surface attachment, the sensor is able to detect monolayer attachments as small as 1 Å on the surface of the silicon nanowires.

Minimizing Actuator-Induced Residual Error in Active Space Telescope Primary Mirrors

DTIC Science & Technology

2010-09-01

actuator geometry, and rib-to-facesheet intersection geometry are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A...are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A parametric finite element model is used to explore the trade space...MOST) finite element model. The move to lightweight actively-controlled silicon carbide ( SiC ) mirrors is traced back to previous generations of space

Ultracompact and high efficient silicon-based polarization splitter-rotator using a partially-etched subwavelength grating coupler

PubMed Central

Xu, Yin; Xiao, Jinbiao

2016-01-01

On-chip polarization manipulation is pivotal for silicon-on-insulator material platform to realize polarization-transparent circuits and polarization-division-multiplexing transmissions, where polarization splitters and rotators are fundamental components. In this work, we propose an ultracompact and high efficient silicon-based polarization splitter-rotator (PSR) using a partially-etched subwavelength grating (SWG) coupler. The proposed PSR consists of a taper-integrated SWG coupler combined with a partially-etched waveguide between the input and output strip waveguides to make the input transverse-electric (TE) mode couple and convert to the output transverse-magnetic (TM) mode at the cross port while the input TM mode confine well in the strip waveguide during propagation and directly output from the bar port with nearly neglected coupling. Moreover, to better separate input polarizations, an additional tapered waveguide extended from the partially-etched waveguide is also added. From results, an ultracompact PSR of only 8.2 μm in length is achieved, which is so far the reported shortest one. The polarization conversion loss and efficiency are 0.12 dB and 98.52%, respectively, together with the crosstalk and reflection loss of −31.41/−22.43 dB and −34.74/−33.13 dB for input TE/TM mode at wavelength of 1.55 μm. These attributes make the present device suitable for constructing on-chip compact photonic integrated circuits with polarization-independence. PMID:27306112

Process technologies of MPACVD planar waveguide devices and fiber attachment

NASA Astrophysics Data System (ADS)

Li, Cheng-Chung; Qian, Fan; Boudreau, Robert A.; Rowlette, John R., Sr.; Bowen, Terry P.

1999-03-01

Optical circuits based on low-loss glass waveguide on silicon are a practical and promising approach to integrate different functional components. Fiber attachment to planar waveguide provides a practical application for optical communications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. Microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer is thus deposited with a compatible high growth rate (i.e. 0.4 - 0.5 micrometer/min). Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The resultant refractive index can be varied between 1.46 (i.e. pure silica) and 1.60 (i.e. pure germania). Waveguides can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on a mask layer. The core layer is removed by plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma (ICP) etch. Etch rates of 3000 - 4000 angstrom/min have been achieved using ICP compared to typical etch rates of 200 - 300 angstrom/min using conventional RIE. Planar waveguides offer good mode matching to optical fiber. A polished fiber end can be glued to the end facet of waveguide with a very low optical coupling loss. In addition, anisotropic etching of silicon V- grooves provides a passive alignment capability. Epoxy and solder were used to fix the fiber within the guiding groove. Several designs of waveguide-fiber attachment will be discussed.

Method and apparatus for low-loss signal transmission

NASA Technical Reports Server (NTRS)

Shimabukuro, Fred (Inventor); Yeh, Cavour (Inventor); Fraser, Scott (Inventor); Siegel, Peter (Inventor)

2008-01-01

The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

On-chip integratable all-optical quantizer using strong cross-phase modulation in a silicon-organic hybrid slot waveguide

PubMed Central

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Sang, Xinzhu; Wang, Kuiru; Wu, Qiang; Yan, Binbin; Li, Feng; Zhou, Xian; Zhong, Kangping; Zhou, Guiyao; Yu, Chongxiu; Farrell, Gerald; Lu, Chao; Yaw Tam, Hwa; Wai, P. K. A.

2016-01-01

High performance all-optical quantizer based on silicon waveguide is believed to have significant applications in photonic integratable optical communication links, optical interconnection networks, and real-time signal processing systems. In this paper, we propose an integratable all-optical quantizer for on-chip and low power consumption all-optical analog-to-digital converters. The quantization is realized by the strong cross-phase modulation and interference in a silicon-organic hybrid (SOH) slot waveguide based Mach-Zehnder interferometer. By carefully designing the dimension of the SOH waveguide, large nonlinear coefficients up to 16,000 and 18,069 W−1/m for the pump and probe signals can be obtained respectively, along with a low pulse walk-off parameter of 66.7 fs/mm, and all-normal dispersion in the wavelength regime considered. Simulation results show that the phase shift of the probe signal can reach 8π at a low pump pulse peak power of 206 mW and propagation length of 5 mm such that a 4-bit all-optical quantizer can be realized. The corresponding signal-to-noise ratio is 23.42 dB and effective number of bit is 3.89-bit. PMID:26777054

Bi-wavelength two dimensional chirped grating couplers for low cost WDM PON transceivers

NASA Astrophysics Data System (ADS)

Xu, Lin; Chen, Xia; Li, Chao; Tsang, Hon Ki

2011-04-01

We propose and demonstrate a bi-wavelength two dimensional (2D) waveguide grating coupler on silicon-on-insulator which has efficient coupling of optical light with two-wavelength bands independently between standard optical single mode fibers and nanophotonic waveguides. The details of design are described and the measurement results as well as system performance are experimentally characterized. The bi-wavelength grating coupler can be used as wavelength-division-multiplexing (WDM) splitter/combiner for monolithically silicon integrated transceivers, potentially meeting the low cost requirements for future WDM passive optical network (PON).

Organization of the Integrated Photonics Topical Meeting Held in Victoria, British Columbia on 30 March-1 April 1998. Technical Digest Series. Volume 4. Postconference Edition

DTIC Science & Technology

1999-03-22

amplifiers fabricated on Si substrates by co- sputtering, (p. 27) 11:30am IMC3 ■ Birefrlngent oxidized porous silicon-based optical waveguides, Yu. N...that integrated optical waveguides based on oxidized porous silicon have a relatively large birefringence. As a result, the modes of both... Membrane microresonator lasers with 2-D photonic bandgap crystal mirrors for compact in- plane optics, B. D’Urso, O. Painter, A. Yariv, A. Scherer

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serafimovich, P. G.; Stepikhova, M. V., E-mail: mst@ipm.sci-nnov.ru; Kazanskiy, N. L.

2016-08-15

The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicity induced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.

Ultralow-Loss CMOS Copper Plasmonic Waveguides.

PubMed

Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

2016-01-13

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

DTIC Science & Technology

2015-08-20

optomechanical crystal cavities connected by a dispersion-engineered phonon waveguide. Pulsed and continuous- wave measurements are first used to char- acterize...device layer of a silicon-on-insulator wafer (see App. A), and consists of several parts: an op- tomechanical cavity with co- localized optical and acous... localized cavity mode and the nearly- resonant phonon waveguide modes. The optical coupling waveg- uide is fabricated in the near-field of the nanobeam

Conformable large-area position-sensitive photodetectors based on luminescence-collecting silicone waveguides

NASA Astrophysics Data System (ADS)

Bartu, Petr; Koeppe, Robert; Arnold, Nikita; Neulinger, Anton; Fallon, Lisa; Bauer, Siegfried

2010-06-01

Position sensitive detection schemes based on the lateral photoeffect rely on inorganic semiconductors. Such position sensitive devices (PSDs) are reliable and robust, but preparation with large active areas is expensive and use on curved substrates is impossible. Here we present a novel route for the fabrication of conformable PSDs which allows easy preparation on large areas, and use on curved surfaces. Our device is based on stretchable silicone waveguides with embedded fluorescent dyes, used in conjunction with small silicon photodiodes. Impinging laser light (e.g., from a laser pointer) is absorbed by the dye in the PSD and re-emitted as fluorescence light at a larger wavelength. Due to the isotropic emission from the fluorescent dye molecules, most of the re-emitted light is coupled into the planar silicone waveguide and directed to the edges of the device. Here the light signals are detected via embedded small silicon photodiodes arranged in a regular pattern. Using a mathematical algorithm derived by extensive using of models from global positioning system (GPS) systems and human activity monitoring, the position of light spots is easily calculated. Additionally, the device shows high durability against mechanical stress, when clamped in an uniaxial stretcher and mechanically loaded up to 15% strain. The ease of fabrication, conformability, and durability of the device suggests its use as interface devices and as sensor skin for future robots.

Label-free silicon photonic biosensor system with integrated detector array.

PubMed

Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

2009-08-07

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

NASA Astrophysics Data System (ADS)

Nader, Nima; Maser, Daniel L.; Cruz, Flavio C.; Kowligy, Abijith; Timmers, Henry; Chiles, Jeff; Fredrick, Connor; Westly, Daron A.; Nam, Sae Woo; Mirin, Richard P.; Shainline, Jeffrey M.; Diddams, Scott

2018-03-01

Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm-6.2 μm). Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Design, Fabrication, and Packaging of Mach-Zehnder Interferometers for Biological Sensing Applications

NASA Astrophysics Data System (ADS)

Novak, Joseph

Optical biological sensors are widely used in the fields of medical testing, water treatment and safety, gene identification, and many others due to advances in nanofabrication technology. This work focuses on the design of fiber-coupled Mach-Zehnder Interferometer (MZI) based biosensors fabricated on silicon-on-insulator (SOI) wafer. Silicon waveguide sensors are designed with multimode and single-mode dimensions. Input coupling efficiency is investigated by design of various taper structures. Integration processing and packaging is performed for fiber attachment and enhancement of input coupling efficiency. Optical guided-wave sensors rely on single-mode operation to extract an induced phase-shift from the output signal. A silicon waveguide MZI sensor designed and fabricated for both multimode and single-mode dimensions. Sensitivity of the sensors is analyzed for waveguide dimensions and materials. An s-bend structure is designed for the multimode waveguide to eliminate higher-order mode power as an alternative to single-mode confinement. Single-mode confinement is experimentally demonstrated through near field imaging of waveguide output. Y-junctions are designed for 3dB power splitting to the MZI arms and for power recombination after sensing to utilize the interferometric function of the MZI. Ultra-short 10microm taper structures with curved geometries are designed to improve insertion loss from fiber-to-chip without significantly increasing device area and show potential for applications requiring misalignment tolerance. An novel v-groove process is developed for self-aligned integration of fiber grooves for attachment to sensor chips. Thermal oxidation at temperatures from 1050-1150°C during groove processing creates an SiO2 layer on the waveguide end facet to protect the waveguide facet during integration etch processing without additional e-beam lithography processing. Experimental results show improvement of insertion loss compared to dicing preparation and Focused Ion Beam methods using the thermal oxidation process.

Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

NASA Astrophysics Data System (ADS)

Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo; Kanellos, George T.; Fitsios, Dimitrios; Pleros, Nikos

2013-02-01

We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

Demonstration of highly efficient forward stimulated Brillouin scattering in partly suspended silicon nanowire racetrack resonators

NASA Astrophysics Data System (ADS)

Zhang, Ruiwen; Sun, Junqiang; Chen, Guodong; Cheng, Ming; Jiang, Jialin

2017-07-01

We demonstrate the forward stimulated Brillouin scattering (FSBS) in a partly suspended silicon nanowire racetrack resonator. To realize the tight confinement of the transverse acoustic modes in the nanoscale silicon core, the racetrack resonator is supported by the tiny pillar. The Brillouin amplification of 2.25 dB is achieved with the resonator radius of 100 μm under a low-power pump laser of 8 mW. The influences of the waveguide width and the top width of the tiny pillar on the Brillouin frequency shift and Brillouin gain are presented and analyzed. The Brillouin frequency shift is conveniently manipulated by the changes in waveguide widths. Our proposed approach furnishes an alternative towards harnessing FSBS in integrated photonic circuits.

Active control of lateral leakage in thin-ridge SOI waveguide structures

NASA Astrophysics Data System (ADS)

Dalvand, Naser; Nguyen, Thach G.; Tummidi, Ravi S.; Koch, Thomas L.; Mitchell, Arnan

2011-12-01

We report on the design and simulation of a novel Silicon-On-Insulator waveguide structures which when excited with TM guided light, emit TE polarized radiation with controlled radiation characteristics[1]. The structures utilize parallel leaky waveguides of specific separations. The structures are simulated using a full-vector mode-matching approach which allows visualisation of the evolution of the propagating and radiating fields over the length of the waveguide structure. It is shown that radiation can be resonantly enhanced or suppressed in different directions depending on the choice of the phase of the excitation of the waveguide components. Steps toward practical demonstration are identified.

High-efficiency power transfer for silicon-based photonic devices

NASA Astrophysics Data System (ADS)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

PubMed

Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

2012-12-17

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Silicon graphene Bragg gratings.

PubMed

Capmany, José; Domenech, David; Muñoz, Pascual

2014-03-10

We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

Micrometer size polarization independent depletion-type photonic modulator in Silicon On Insulator

NASA Astrophysics Data System (ADS)

Gardes, F. Y.; Tsakmakidis, K. L.; Thomson, D.; Reed, G. T.; Mashanovich, G. Z.; Hess, O.; Avitabile, D.

2007-04-01

The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarization independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

PubMed

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

Infrared transparent graphene heater for silicon photonic integrated circuits.

PubMed

Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

2016-04-18

Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides

PubMed Central

Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.

2016-01-01

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauermann, M.; Weimann, C.; Palmer, R.

2014-05-27

We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

DOEpatents

Neudecker, Bernd J.; Bates, John B.

2001-01-01

Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

Integrated Optical Interferometers with Micromachined Diaphragms for Pressure Sensing

NASA Technical Reports Server (NTRS)

DeBrabander, Gregory N.; Boyd, Joseph T.

1996-01-01

Optical pressure sensors have been fabricated which use an integrated optical channel waveguide that is part of an interferometer to measure the pressure-induced strain in a micromachined silicon diaphragm. A silicon substrate is etched from the back of the wafer leaving a rectangular diaphragm. On the opposite side of the wafer, ring resonator and Mach-Zehnder interferometers are formed with optical channel waveguides made from a low pressure chemical vapor deposited film of silicon oxynitride. The interferometer's phase is altered by pressure-induced stress in a channel segment positioned over the long edge of the diaphragm. The phase change in the ring resonator is monitored using a link-insensitive swept frequency laser diode, while in the Mach-Zehnder it is determined using a broad band super luminescent diode with subsequent wavelength separation. The ring resonator was found to be highly temperature sensitive, while the Mach-Zehnder, which had a smaller optical path length difference, was proportionally less so. The quasi-TM mode was more sensitive to pressure, in accord with calculations. Waveguide and sensor theory, sensitivity calculations, a fabrication sequence, and experimental results are presented.

L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Pérez-Galacho, Diego; Guerber, Sylvain; Vakarin, Vladyslav; Marcaud, Guillaume; Le Roux, Xavier; Cassan, Eric; Marris-Morini, Delphine; Cheben, Pavel; Boeuf, Frédéric; Baudot, Charles; Vivien, Laurent

2017-09-01

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20  dB). A measured coupling efficiency of -2.7  dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

PubMed

Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír

2016-03-07

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

PubMed Central

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan

2016-01-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

PubMed

Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

2016-03-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

A photonic crystal waveguide with silicon on insulator in the near-infrared band

NASA Astrophysics Data System (ADS)

Tang, Hai-Xia; Zuo, Yu-Hua; Yu, Jin-Zhong; Wang, Qi-Ming

2007-07-01

A two-dimensional (2D) photonic crystal waveguide in the Γ-K direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

PubMed

Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

2015-06-01

Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

Low-loss curved subwavelength grating waveguide based on index engineering

NASA Astrophysics Data System (ADS)

Wang, Zheng; Xu, Xiaochuan; Fan, D. L.; Wang, Yaoguo; Chen, Ray T.

2016-03-01

Subwavelength grating (SWG) waveguide is an intriguing alternative to conventional optical waveguides due to its freedom to tune a few important waveguide properties such as dispersion and refractive index. Devices based on SWG waveguide have demonstrated impressive performances compared to those of conventional waveguides. However, the large loss of SWG waveguide bends jeopardizes their applications in integrated photonics circuits. In this work, we propose that a predistorted refractive index distribution in SWG waveguide bends can effectively decrease the mode mismatch noise and radiation loss simultaneously, and thus significantly reduce the bend loss. Here, we achieved the pre-distortion refractive index distribution by using trapezoidal silicon pillars. This geometry tuning approach is numerically optimized and experimentally demonstrated. The average insertion loss of a 5 μm SWG waveguide bend can be reduced drastically from 5.58 dB to 1.37 dB per 90° bend for quasi-TE polarization. In the future, the proposed approach can be readily adopted to enhance performance of an array of SWG waveguide-based photonics devices.

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

NASA Astrophysics Data System (ADS)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Wavelength selective switch array employing silica-based waveguide frontend with integrated polarization diversity optics.

PubMed

Sakamaki, Yohei; Shikama, Kota; Ikuma, Yuichiro; Suzuki, Kenya

2017-08-21

We propose a waveguide frontend with integrated polarization diversity optics for a wavelength selective switch (WSS) array with a liquid crystal on silicon switching engine to simplify the free space optics configuration and the alignment process in optical modules. The polarization diversity function is realized by the integration of a waveguide-type polarization beam splitter and a polarization rotating half-wave plate in a beam launcher using silica-based planar lightwave circuit technology. We confirmed experimentally the feasibility of using our proposed waveguide frontend in a two-in-one 1 × 20 WSS. The experimental results show that the fabricated waveguide frontend provides a polarization diversity function without any degradation in optical performance.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

PubMed

Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

2016-02-10

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

NASA Astrophysics Data System (ADS)

Driscoll, Jeffrey B.

Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields are shown to contribute no time-averaged momentum. Furthermore, the vectoral modal components, in conjunction with the tensoral nature of the third-order susceptibility of Si, lead to nonlinear properties which are dependent on waveguide orientation with respect to the Si parent crystal and the construction of the modal electric field components. This consideration is used to maximize effective nonlinearity and realize nonlinear Kerr gratings along specific waveguide trajectories. Tight optical confinement leads to a natural enhancement of the intrinsically large effective nonlinearty of Si waveguides, and in fact, the effective nonlinearty can be made to be almost 106 times greater in Si waveguides than that of standard single-mode fiber. Such a large nonlinearity motivates chip-scale all-optical signal processing techniques. Wavelength conversion by both four-wave-mixing (FWM) and cross-phase-modulation (XPM) will be discussed, including a technique that allows for enhanced broadband discrete FWM over arbitrary spectral spans by modulating both the linear and nonlinear waveguide properties through periodic changes in waveguide geometry. This quasi-phase-matching approach has very real applications towards connecting mature telecom sources detectors and components to other spectral regimes, including the mid-IR. Other signal processing techniques such as all-optical modulation format conversion via XPM will also be discussed. This thesis will conclude by looking at ways to extend the bandwidth capacity of Si waveguide interconnects on chip. As the number of processing cores continues to scale as a means for computational performance gains, on-chip link capacity will become an increasingly important issue. Metallic traces have severe limitations and are envisioned to eventually bow to integrated photonic links. The aggregate bandwidth supported by a single waveguide link will therefore become a crucial consideration as integrated photonics approaches the CPU. One way to increase aggregate bandwidth is to utilize different eigen-modes of a multimode waveguide, and integrated waveguide mode-muxes and demuxes for achieving simultaneous mode-division-multiplexing and wavelength-division-multiplexing will be demonstrated.

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Optical trapping apparatus, methods and applications using photonic crystal resonators

DOEpatents

Erickson, David; Chen, Yih-Fan

2015-06-16

A plurality of photonic crystal resonator optical trapping apparatuses and a plurality optical trapping methods using the plurality of photonic crystal resonator optical trapping apparatuses include located and formed over a substrate a photonic waveguide that is coupled (i.e., either separately coupled or integrally coupled) with a photonic crystal resonator. In a particular embodiment, the photonic waveguide and the photonic crystal resonator comprise a monocrystalline silicon (or other) photonic material absent any chemical functionalization. In another particular embodiment, the photonic waveguide and the photonic crystal resonator comprise a silicon nitride material which when actuating the photonic crystal resonator optical trapping apparatus with a 1064 nanometer resonant photonic radiation wavelength (or other resonant photonic radiation wavelength in a range from about 700 to about 1200 nanometers) provides no appreciable heating of an aqueous sample fluid that is analyzed by the photonic crystal resonator optical trapping apparatus.

Nanoscale light–matter interactions in atomic cladding waveguides

PubMed Central

Stern, Liron; Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2013-01-01

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light–matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light–vapour interactions on a chip. Specifically, we demonstrate light–matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime. PMID:23462991

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

DOE PAGES

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; ...

2016-03-01

Here, we demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneathmore » an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.« less

Thermo-optic coefficient and nonlinear refractive index of silicon oxynitride waveguides

NASA Astrophysics Data System (ADS)

Trenti, A.; Borghi, M.; Biasi, S.; Ghulinyan, M.; Ramiro-Manzano, F.; Pucker, G.; Pavesi, L.

2018-02-01

Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. In this work, we measured the thermo-optic coefficient dn/dT and the nonlinear refractive index n2 of relatively high (n ˜ 1.83 at a wavelength of 1.55 μm) refractive index SiON by using racetrack resonators. These parameters have been determined to be d/n d T =(1.84 ±0.17 ) × 10-5 K-1 and n2 = (7 ± 1) × 10-16 cm2W-1.

Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yap, K.P.; Lamontagne, B.; Delage, A.

2006-05-15

We present a technique to lithographically define and fabricate all required optical facets on a silicon-on-insulator photonic integrated circuit by an inductively coupled plasma etch process. This technique offers 1 {mu}m positioning accuracy of the facets at any location within the chip and eliminates the need of polishing. Facet fabrication consists of two separate steps to ensure sidewall verticality and minimize attack on the end surfaces of the waveguides. Protection of the waveguides by a thermally evaporated aluminum layer before the 40-70 {mu}m deep optical facet etching has been proven essential in assuring the facet smoothness and integrity. Both scanningmore » electron microscopy analysis and optical measurement results show that the quality of the facets prepared by this technique is comparable to the conventional facets prepared by polishing.« less

Slot silicon-gallium nitride waveguide in MMI structures based 1x8 wavelength demultiplexer

NASA Astrophysics Data System (ADS)

Ben Zaken, Bar Baruch; Zanzury, Tal; Malka, Dror

2017-06-01

We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operated at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm and 1565 nm wavelengths. Gallium nitride (GaN) surrounded by silicon (Si) was founded as suitable materials for the slot-waveguide structures. The proposed device was designed by seven 1x2 MMI couplers, fourteen S-band and one input taper. Numerical investigations were carried out on the geometrical parameters by using a full vectorial-beam propagation method (FVBPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530- 1565 nm) with low crosstalk ((-19.97)-(-13.77) dB) and bandwidth (1.8-3.6 nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology.

Towards Fieldable Rapid Bioagent Detection: advanced Resonant Optical Waveguide and Biolayer Structures for Integrated Biosensing

DTIC Science & Technology

2007-11-01

waveguide approach in which a right-angled gadolinium gallium garnet (GGG) glass prism of index 1.965 at 633 nm is used to couple light from a HeNe laser of...SPARROW sensor consists of two planar, single mode aluminum oxide waveguides separated vertically by a lower refractive index silicon dioxide layer...and high stability could be formed on aluminum oxide, the binding of an alkyl carboxylic acid, stearic acid (n-octadecanoic acid), was investigated

Mechanical Properties of Spinal Ligaments for Rhesus Monkey, Baboon and Chimpanzee.

DTIC Science & Technology

1981-06-01

isolate the spine, to grossly elevate the scapulae , and to expose the dorsal aspect of the rib cage. Using a Stryker saw, the rib,: were cut at least 2...Figure 10. The upper gripping plate was attached to the actuator of the testing machine and the lower plate to the load cell. The ligament sample was held...against these plates with stainless steel bands. On the surfaces of both the plates and the bands, a waterproof abrasive mesh (silicon carbide 120

Ribbed Swimsuit

NASA Technical Reports Server (NTRS)

1996-01-01

Langley Research Center's turbulent-drag reduction technology, as applied to airplanes and the winning yacht in America's Cup, finds another application: swimwear. The Strush SR swimsuit features silicon ribbing or "riblets" at the chest and buttocks, reducing friction in the water. Combined with innovations by its manufacturer, Arena North America, the company says the technology makes the suit 10 to 15 percent faster than any other world class swimsuit. The publicity for the Strush SR is handled by Suter Communications, Inc. *Company no longer exists (12/5/96).

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Compact cantilever couplers for low-loss fiber coupling to silicon photonic integrated circuits.

PubMed

Wood, Michael; Sun, Peng; Reano, Ronald M

2012-01-02

We demonstrate coupling from tapered optical fibers to 450 nm by 250 nm silicon strip waveguides using compact cantilever couplers. The couplers consist of silicon inverse width tapers embedded within silicon dioxide cantilevers. Finite difference time domain simulations are used to design the length of the silicon inverse width taper to as short as 6.5 μm for a cantilever width of 2 μm. Modeling of various strip waveguide taper profiles shows reduced coupling losses for a quadratic taper profile. Infrared measurements of fabricated devices demonstrate average coupling losses of 0.62 dB per connection for the quasi-TE mode and 0.50 dB per connection for the quasi-TM mode across the optical telecommunications C band. In the wavelength range from 1477 nm to 1580 nm, coupling losses for both polarizations are less than 1 dB per connection. The compact, broadband, and low-loss coupling scheme enables direct access to photonic integrated circuits on an entire chip surface without the need for dicing or cleaving the chip.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

MITLL Silicon Integrated Photonics Process: Design Guide

DTIC Science & Technology

2015-07-31

Silicon Integrated Photonics Process Comprehensive Design Guide 16  Deep Etch for Fiber Coupling (DEEP_ETCH...facets for fiber coupling. Standard design layers for each process are defined in Section 3, but other options can be made available. Notes on...a silicon thinning process that can create very low loss waveguides (and which better suppresses back scatter and, therefore, resonance splitting in

Vibroacoustics of the piano soundboard: Reduced models, mobility synthesis, and acoustical radiation regime

NASA Astrophysics Data System (ADS)

Boutillon, Xavier; Ege, Kerem

2013-09-01

In string musical instruments, the sound is radiated by the soundboard, subject to the strings excitation. This vibration of this rather complex structure is described here with models which need only a small number of parameters. Predictions of the models are compared with the results of experiments that have been presented in Ege et al. [Vibroacoustics of the piano soundboard: (non)linearity and modal properties in the low- and mid-frequency ranges, Journal of Sound and Vibration 332 (5) (2013) 1288-1305]. The apparent modal density of the soundboard of an upright piano in playing condition, as seen from various points of the structure, exhibits two well-separated regimes, below and above a frequency flim that is determined by the wood characteristics and by the distance between ribs. Above flim, most modes appear to be localised, presumably due to the irregularity of the spacing and height of the ribs. The low-frequency regime is predicted by a model which consists of coupled sub-structures: the two ribbed areas split by the main bridge and, in most cases, one or two so-called cut-off corners. In order to assess the dynamical properties of each of the subplates (considered here as homogeneous plates), we propose a derivation of the (low-frequency) modal density of an orthotropic homogeneous plate which accounts for the boundary conditions on an arbitrary geometry. Above flim, the soundboard, as seen from a given excitation point, is modelled as a set of three structural wave-guides, namely the three inter-rib spacings surrounding the excitation point. Based on these low- and high-frequency models, computations of the point-mobility and of the apparent modal densities seen at several excitation points match published measurements. The dispersion curve of the wave-guide model displays an acoustical radiation scheme which differs significantly from that of a thin homogeneous plate. It appears that piano dimensioning is such that the subsonic regime of acoustical radiation extends over a much wider frequency range than it would be for a homogeneous plate with the same low-frequency vibration. One problem in piano manufacturing is examined in relationship with the possible radiation schemes induced by the models.

Solid State Research, 1980:4

DTIC Science & Technology

1980-10-31

and is initiated at the periphery of the de- vice at opening in the SijNj layer. Rate measurement* of thi* prove** made on the GKOUSS imager using...dimensions, single-mode opera- tion can be obtained. There is a stripe opening in the oxide film running parallel to the etched rib, which can be...seen in cross section in Fig. I-l(a). This stripe opening is the nucleation region for the epitaxial growth. Other oxide-confined waveguide

Tunable Stimulated Brillouin Scattering in Planar Optical Circuits

DTIC Science & Technology

2012-11-01

interaction, making it the material of choice for chip-scale SBS. SBS was characterized in a 7 cm long As2S3 rib waveguide using the backscattered ...spectrum and pump-probe measurements. Figure 2(a) shows the backscattered signal demonstrating the generation of Stokes signal as the average pump...power is increased; pulsed pump with a duty cycle of 1% and pulse width of 400ns was used for backscattering experiment. From the backscattered

Ultra-high-speed graphene optical modulator design based on tight field confinement in a slot waveguide

NASA Astrophysics Data System (ADS)

Kovacevic, Goran; Phare, Christopher; Set, Sze Y.; Lipson, Michal; Yamashita, Shinji

2018-06-01

We present a design of an ultra-fast in-line graphene optical modulator on a silicon waveguide with a bandwidth exceeding 100 GHz, very small power consumption below 15 fJ/bit, and insertion loss of 1.5 dB. This is achieved by utilizing the transverse-electric-mode silicon slot to tailor the overlap of graphene electrodes, thus significantly reducing the capacitance of the device while maintaining a low insertion loss and using conservative estimates of the graphene resistance. Our design is substantiated by comprehensive finite-element-method simulations and RC circuit characterization, as well as fabrication feasibility discussion.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Hao, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu; Optical Nanostructures Laboratory, Columbia University, New York, New York 10027; Gu, Tingyi, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu

2016-03-14

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

Hybrid indium phosphide-on-silicon nanolaser diode

NASA Astrophysics Data System (ADS)

Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

2017-04-01

The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

PubMed Central

Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

2016-01-01

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

PubMed

Palit, Sabarni; Kirch, Jeremy; Huang, Mengyuan; Mawst, Luke; Jokerst, Nan Marie

2010-10-15

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Silicon photonics thermal phase shifter with reduced temperature range

DOEpatents

Lentine, Anthony L; Kekatpure, Rohan D; DeRose, Christopher; Davids, Paul; Watts, Michael R

2013-12-17

Optical devices, phased array systems and methods of phase-shifting an input signal are provided. An optical device includes a microresonator and a waveguide for receiving an input optical signal. The waveguide includes a segment coupled to the microresonator with a coupling coefficient such that the waveguide is overcoupled to the microresonator. The microresonator received the input optical signal via the waveguide and phase-shifts the input optical signal to form an output optical signal. The output optical signal is coupled into the waveguide via the microresonator and transmitted by the waveguide. At an operating point of the optical device, the coupling coefficient is selected to reduce a change in an amplitude of the output optical signal and to increase a change in a phase of the output optical signal, relative to the input optical signal.

Three Dimensionally Interconnected Silicon Nanomembranes for Optical Phased Array (OPA) and Optical True Time Delay (TTD) Applications

DTIC Science & Technology

2012-06-01

Nanophotonic Waveguides," J. Lightwave Technol. 25 (1), 151-156 (2007). [7-4] Yongbo Tang, Zhechao Wang, Lech Wosinski, Urban Westergren, and Sailing...Waveguides," Photonics Journal, IEEE 3 (2), 203-208 (2011). [8-25] Zhechao Wang, Ning Zhu, Yongbo Tang, Lech Wosinski, Daoxin Dai, and Sailing He

Polymer electro-optic waveguide devices: Low-loss etchless fabrication techniques and passive-to-active integration

NASA Astrophysics Data System (ADS)

Geary, Kevin

The development of high-frequency polymer electro-optic modulators has seen steady and significant progress in recent years, yet applications of these promising materials to more complicated integrated optic structures and arrays of devices have been limited primarily due to high optical waveguide loss characteristics. This is unfortunate since a major advantage of polymers as photonic materials is their compatibility with photolithographic processing of large components. In this Dissertation, etchless waveguide writing techniques are presented in order to improve the overall optical insertion loss of electro-optic polymer waveguide devices. These techniques include poling-induced writing, stress-induced waveguide writing, and photobleaching. Using these waveguide writing mechanisms, we have demonstrated straight waveguides, phase modulators, Mach-Zehnder intensity modulators, variable optical attenuators, and multimode interference (MMI) power splitters, all with improved loss characteristics over their etched rib waveguide counterparts. Ultimately, the insertion loss of an integrated optic device is limited by the actual material loss of the core waveguide material. In this Dissertation, passive-to-active polymer waveguide transitions are proposed to circumvent this problem. These transitions are compact, in-plane, self-aligned, and require no tapering of any physical dimensions of the waveguides. By utilizing both the time-dependent and intensity-dependent photobleaching characteristics of electro-optic polymer materials, adiabatic refractive index tapers can be seamlessly coupled to in-plane butt couple transitions, resulting in losses as low as 0.1 dB per interface. By integrating passive polymer planar lightwave circuits with the high-speed phase shifting capability of electro-optic polymers, active wideband photonic devices of increased size and complexity can be realized. Optical fiber-to-device coupling can also result in significant contributions to the overall insertion loss of an integrated electro-optic polymer device. In this Dissertation, we leverage the photobleached refractive index taper component of our proposed passive-to-active polymer waveguide transitions in order to realize a two-dimensional optical mode transformer for improved overall fiber-to-device coupling of electro-optic polymer waveguide devices.

Planar polymer and glass graded index waveguides for data center applications

NASA Astrophysics Data System (ADS)

Pitwon, Richard; Yamauchi, Akira; Brusberg, Lars; Wang, Kai; Ishigure, Takaaki; Schröder, Henning; Neitz, Marcel; Worrall, Alex

2016-03-01

Embedded optical waveguide technology for optical printed circuit boards (OPCBs) has advanced considerably over the past decade both in terms of materials and achievable waveguide structures. Two distinct classes of planar graded index multimode waveguide have recently emerged based on polymer and glass materials. We report on the suitability of graded index polymer waveguides, fabricated using the Mosquito method, and graded index glass waveguides, fabricated using ion diffusion on thin glass foils, for deployment within future data center environments as part of an optically disaggregated architecture. To this end, we first characterize the wavelength dependent performance of different waveguide types to assess their suitability with respect to two dominant emerging multimode transceiver classes based on directly modulated 850 nm VCSELs and 1310 silicon photonics devices. Furthermore we connect the different waveguide types into an optically disaggregated data storage system and characterize their performance with respect to different common high speed data protocols used at the intra and inter rack level including 10 Gb Ethernet and Serial Attached SCSI.

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

PubMed Central

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

Analog optical computing primitives in silicon photonics

DOE PAGES

Jiang, Yunshan; DeVore, Peter T. S.; Jalali, Bahram

2016-03-15

Optical computing accelerators help alleviate bandwidth and power consumption bottlenecks in electronics. In this paper, we show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation and the recovery of a signal in the presence of multiplicative distortion. Finally, the function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.

2015-07-20

We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

Organic Thin Films for Photonics Applications. Volume 14

DTIC Science & Technology

1997-01-01

progress of the polymer optical fiber (POF) and related photonics polymer for high-speed telecommunication is reviewed. The high-bandwidth perfluorinated ...silicon. In the waveguide spectrometry studies described above, ab- sorption was measured on slab waveguides where fabrication imperfections are... compound in scries I[//| and II|//| , we have determined in solution: - the ground-state dipole /{ using capacitive measurements - the static

Unambiguous demonstration of soliton evolution in slow-light silicon photonic crystal waveguides with SFG-XFROG.

PubMed

Li, Xiujian; Liao, Jiali; Nie, Yongming; Marko, Matthew; Jia, Hui; Liu, Ju; Wang, Xiaochun; Wong, Chee Wei

2015-04-20

We demonstrate the temporal and spectral evolution of picosecond soliton in the slow light silicon photonic crystal waveguides (PhCWs) by sum frequency generation cross-correlation frequency resolved optical grating (SFG-XFROG) and nonlinear Schrödinger equation (NLSE) modeling. The reference pulses for the SFG-XFROG measurements are unambiguously pre-characterized by the second harmonic generation frequency resolved optical gating (SHG-FROG) assisted with the combination of NLSE simulations and optical spectrum analyzer (OSA) measurements. Regardless of the inevitable nonlinear two photon absorption, high order soliton compressions have been observed remarkably owing to the slow light enhanced nonlinear effects in the silicon PhCWs. Both the measurements and the further numerical analyses of the pulse dynamics indicate that, the free carrier dispersion (FCD) enhanced by the slow light effects is mainly responsible for the compression, the acceleration, and the spectral blue shift of the soliton.

A Plasmonic based Ultracompact Polarization Beam Splitter on Silicon-on-Insulator Waveguides

PubMed Central

Tan, Qilong; Huang, Xuguang; Zhou, Wen; Yang, Kun

2013-01-01

An ultracompact polarization beam splitter (PBS) is designed on silicon-on-insulator (SOI) platform based on the localized surface plasmons (LSPs) excited by particular polarization light. The device uses nanoscale silver cylinders as the polarization selection between two silicon waveguides of a directional coupler. The transverse-magnetic (TM) polarization light excites localized surface plasmons and is coupled into the cross port of the directional coupler with a low insert loss, while the transverse-electric (TE) polarization light is under restriction. The PBS has a coupling layer with 50 nm width and 1.1 μm length supporting broadband operation. The simulation calculations show that 22.06dB and 23.06dB of extinction ratios for the TE and TM polarizations were obtained, together with insertion losses of 0.09dB and 0.40dB. PMID:23856635

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2013-04-08

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

An octave-spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

PubMed Central

Kuyken, Bart; Ideguchi, Takuro; Holzner, Simon; Yan, Ming; Hänsch, Theodor W.; Van Campenhout, Joris; Verheyen, Peter; Coen, Stéphane; Leo, Francois; Baets, Roel; Roelkens, Gunther; Picqué, Nathalie

2015-01-01

Laser frequency combs, sources with a spectrum consisting of hundred thousands evenly spaced narrow lines, have an exhilarating potential for new approaches to molecular spectroscopy and sensing in the mid-infrared region. The generation of such broadband coherent sources is presently under active exploration. Technical challenges have slowed down such developments. Identifying a versatile highly nonlinear medium for significantly broadening a mid-infrared comb spectrum remains challenging. Here we take a different approach to spectral broadening of mid-infrared frequency combs and investigate CMOS-compatible highly nonlinear dispersion-engineered silicon nanophotonic waveguides on a silicon-on-insulator chip. We record octave-spanning (1,500–3,300 nm) spectra with a coupled input pulse energy as low as 16 pJ. We demonstrate phase-coherent comb spectra broadened on a room-temperature-operating CMOS-compatible chip. PMID:25697764

Electro-optical logic gates based on graphene-silicon waveguides

NASA Astrophysics Data System (ADS)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

Design of a compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides.

PubMed

Xu, Yin; Xiao, Jinbiao

2016-01-20

A compact and integrated TM-rotated/TE-through polarization beam splitter for silicon-based slot waveguides is proposed and characterized. For the input TM mode, it is first transferred into the cross strip waveguide using a tapered directional coupler (DC), and then efficiently rotated to the corresponding TE mode using an L-shaped bending polarization rotator (PR). Finally, the TE mode for slot waveguide at the output end is obtained with the help of a strip-to-slot mode converter. By contrast, for the input TE mode, it almost passes through the slot waveguide directly and outputs at the bar end with nearly neglected coupling due to a large mode mismatch. Moreover, an additional S-bend connecting the tapered DC and bending PR is used to enhance the performance. Results show that a total device length of 19.6 μm is achieved, where the crosstalk (CT) and polarization conversion loss are, respectively -26.09 and 0.54 dB, for the TM mode, and the CT and insertion loss are, respectively, -22.21 and 0.41 dB, for the TE mode, both at 1.55 μm. The optical bandwidth is approximately 50 nm with a CT<-20  dB. In addition, fabrication tolerances and field evolution are also presented.

Coupled resonator optical waveguides based on silicon-on-insulator photonic wires

NASA Astrophysics Data System (ADS)

Xia, Fengnian; Sekaric, Lidija; O'Boyle, Martin; Vlasov, Yurii

2006-07-01

Coupled resonator optical waveguides (CROWs) comprised of up to 16 racetrack resonators based on silicon-on-insulator (SOI) photonic wires were fabricated and characterized. The optical properties of the CROWs were simulated using measured single resonator parameters based on a matrix approach. The group delay property of CROWs was also analyzed. The SOI based CROWs consisting of multiple resonators have extremely small footprints and can find applications in optical filtering, dispersion compensation, and optical buffering. Moreover, such CROW structure is a promising candidate for exploration of low light level nonlinear optics due to its resonant nature and compact mode size (˜0.1μm2) in photonic wire.

Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

NASA Astrophysics Data System (ADS)

Katz, Oded; Malka, Dror

2017-07-01

In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

PubMed

Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

2010-08-30

To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

Two-mode division multiplexing in a silicon-on-insulator ring resonator.

PubMed

Dorin, Bryce A; Ye, Winnie N

2014-02-24

Mode-division multiplexing (MDM) is an emerging multiple-input multiple-output method, utilizing multimode waveguides to increase channel numbers. In the past, silicon-on-insulator (SOI) devices have been primarily focused on single-mode waveguides. We present the design and fabrication of a two-mode SOI ring resonator for MDM systems. By optimizing the device parameters, we have ensured that each mode is treated equally within the ring. Using adiabatic Bezier curves in the ring bends, our ring demonstrated a signal-to-crosstalk ratio above 18 dB for both modes at the through and drop ports. We conclude that the ring resonator has the potential for filtering and switching for MDM systems on SOI.

Trapped Atoms in One-Dimensional Photonic Crystals

DTIC Science & Technology

2013-08-09

a single silicon -nitride nanobeam (refractive index n = 2) with a 1D array of filleted rectangular holes along the propagation direction; atoms are...trapped in the centers of the holes (figure 1( a )). The second waveguide consists of two parallel silicon nitride nanobeams, each with a periodic array...the refractive index of silicon nitride is approximately constant across the optical domain, we adopt the approximation based on a frequency

Silicon photonics cloud (SiCloud)

NASA Astrophysics Data System (ADS)

DeVore, Peter T. S.; Jiang, Yunshan; Lynch, Michael; Miyatake, Taira; Carmona, Christopher; Chan, Andrew C.; Muniam, Kuhan; Jalali, Bahram

2015-02-01

We present SiCloud (Silicon Photonics Cloud), the first free, instructional web-based research and education tool for silicon photonics. SiCloud's vision is to provide a host of instructional and research web-based tools. Such interactive learning tools enhance traditional teaching methods by extending access to a very large audience, resulting in very high impact. Interactive tools engage the brain in a way different from merely reading, and so enhance and reinforce the learning experience. Understanding silicon photonics is challenging as the topic involves a wide range of disciplines, including material science, semiconductor physics, electronics and waveguide optics. This web-based calculator is an interactive analysis tool for optical properties of silicon and related material (SiO2, Si3N4, Al2O3, etc.). It is designed to be a one stop resource for students, researchers and design engineers. The first and most basic aspect of Silicon Photonics is the Material Parameters, which provides the foundation for the Device, Sub-System and System levels. SiCloud includes the common dielectrics and semiconductors for waveguide core, cladding, and photodetection, as well as metals for electrical contacts. SiCloud is a work in progress and its capability is being expanded. SiCloud is being developed at UCLA with funding from the National Science Foundation's Center for Integrated Access Networks (CIAN) Engineering Research Center.

Plasmonic integrated circuits comprising metal waveguides, multiplexer/demultiplexer, detectors, and logic circuits on a silicon substrate

NASA Astrophysics Data System (ADS)

Fukuda, M.; Ota, M.; Sumimura, A.; Okahisa, S.; Ito, M.; Ishii, Y.; Ishiyama, T.

2017-05-01

A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon

NASA Astrophysics Data System (ADS)

Yan, Yingchao; Faber, Anne J.; de Waal, Henk

1996-01-01

RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

NASA Astrophysics Data System (ADS)

Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

2018-04-01

All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

Label-free silicon photonic biosensor system with integrated detector array

PubMed Central

Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

2010-01-01

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

Inverse design of near unity efficiency perfectly vertical grating couplers.

PubMed

Michaels, Andrew; Yablonovitch, Eli

2018-02-19

Efficient coupling between integrated optical waveguides and optical fibers is essential to the success of silicon photonics. While many solutions exist, perfectly vertical grating couplers that scatter light out of a waveguide in the direction normal to the waveguide's top surface are an ideal candidate due to their potential to reduce packaging complexity. Designing such couplers with high efficiencies, however, has proven difficult. In this paper, we use inverse electromagnetic design techniques to optimize a high efficiency two-layer perfectly vertical silicon grating coupler. Our base design achieves a chip-to-fiber coupling efficiency of 99.2% (-0.035 dB) at 1550 nm. Using this base design as a starting point, we run subsequent constrained optimizations to realize vertical couplers with coupling efficiencies over 96% and back reflections of less than -40 dB which can be fabricated using 65 nm-resolution lithography. These results demonstrate a new path forward for designing fabrication-tolerant ultra high efficiency grating couplers.

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

TriPleX: a versatile dielectric photonic platform

NASA Astrophysics Data System (ADS)

Wörhoff, Kerstin; Heideman, René G.; Leinse, Arne; Hoekman, Marcel

2015-04-01

Photonic applications based on planar waveguide technology impose stringent requirements on properties such as optical propagation losses, light coupling to optical fibers, integration density, as well as on reliability and reproducibility. The latter is correlated to a high level of control of the refractive index and waveguide geometry. In this paper, we review a versatile dielectric waveguide platform, called TriPleX, which is based on alternating silicon nitride and silicon dioxide films. Fabrication with CMOS-compatible equipment based on low-pressure chemical vapor deposition enables the realization of stable material compositions being a prerequisite to the control of waveguide properties and modal shape. The transparency window of both materials allows for the realization of low-loss waveguides over a wide wavelength range (400 nm-2.35 μm). Propagation losses as low as 5×10-4 dB/cm are reported. Three basic geometries (box shell, double stripe, and filled box) can be distinguished. A specific tapering technology is developed for on-chip, low-loss (<0.1 dB) spotsize convertors, allowing for combining efficient fiber to chip coupling with high-contrast waveguides required for increased functional complexity as well as for hybrid integration with other photonic platforms such as InP and SOI. The functionality of the TriPleX platform is captured by verified basic building blocks. The corresponding library and associated design kit is available for multi-project wafer (MPW) runs. Several applications of this platform technology in communications, biomedicine, sensing, as well as a few special fields of photonics are treated in more detail.

Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

NASA Astrophysics Data System (ADS)

Porcel, Marco A. G.; Mak, Jesse; Taballione, Caterina; Schermerhorn, Victoria K.; Epping, Jörn P.; van der Slot, Peter J. M.; Boller, Klaus-J.

2017-12-01

We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 {\\mu}m and various different widths, from 0.6 to 1.2 {\\mu}m, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10$^{-4}$ to 10$^{-2}$ s$^{-1}$, with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up, the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 x 1 {\\mu}m$^2$ cross section and 36 mm length, corresponding to 53 {\\mu}W at 532 nm with 13 mW of IR input coupled into the waveguide. The according $\\chi^{(2)}$ amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.

Evanescent-wave bonding between optical waveguides.

PubMed

Povinelli, Michelle L; Loncar, Marko; Ibanescu, Mihai; Smythe, Elizabeth J; Johnson, Steven G; Capasso, Federico; Joannopoulos, John D

2005-11-15

Forces arising from overlap between the guided waves of parallel, microphotonic waveguides are calculated. Both attractive and repulsive forces, determined by the choice of relative input phase, are found. Using realistic parameters for a silicon-on-insulator material system, we estimate that the forces are large enough to cause observable displacements. Our results illustrate the potential for a broader class of optically tunable microphotonic devices and microstructured artificial materials.

Design of a broadband reciprocal optical diode in multimode silicon waveguide by partial depth etching

NASA Astrophysics Data System (ADS)

Zhu, Danfeng; Zhang, Jinqiannan; Ye, Han; Yu, Zhongyuan; Liu, Yumin

2018-07-01

We propose a design of reciprocal optical diode based on asymmetric spatial mode conversion in multimode silicon waveguide on the silicon-on-insulator platform. The design possesses large bandwidth, high contrast ratio and high fabrication tolerance. The forward even-to-odd mode conversion and backward blockade of even mode are achieved by partial depth etching in the functional region. Simulated by three-dimension finite-difference time-domain method, the forward transmission efficiency is about -2.05 dB while the backward transmission efficiency is only -22.68 dB, reaching a highest contrast ratio of 0.983 at the wavelength of 1550 nm. The operational bandwidth is up to 200 nm (from 1450 nm to 1650 nm) with contrast ratio higher than 0.911. The numerical analysis also demonstrates that the proposed optical diode possesses high tolerance for geometry parameter errors which may be introduced in fabrication. The design based on partial depth etching is compatible with CMOS process and is expected to contribute to the silicon-based all-optical circuits.

Nanoscale devices based on plasmonic coaxial waveguide resonators

NASA Astrophysics Data System (ADS)

Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

2015-02-01

Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

Full-vectorial finite element method in a cylindrical coordinate system for loss analysis of photonic wire bends

NASA Astrophysics Data System (ADS)

Kakihara, Kuniaki; Kono, Naoya; Saitoh, Kunimasa; Koshiba, Masanori

2006-11-01

This paper presents a new full-vectorial finite-element method in a local cylindrical coordinate system, to effectively analyze bending losses in photonic wires. The discretization is performed in the cross section of a three-dimensional curved waveguide, using hybrid edge/nodal elements. The solution region is truncated by anisotropic, perfectly matched layers in the cylindrical coordinate system, to deal properly with leaky modes of the waveguide. This approach is used to evaluate bending losses in silicon wire waveguides. The numerical results of the present approach are compared with results calculated with an equivalent straight waveguide approach and with reported experimental data. These comparisons together demonstrate the validity of the present approach based on the cylindrical coordinate system and also clarifies the limited validity of the equivalent straight waveguide approximation.

Dispersion flattened single etch-step waveguide based on subwavelength grating

NASA Astrophysics Data System (ADS)

Jafari, Zeinab; Zarifkar, Abbas

2017-06-01

A novel subwavelength-grating-assisted (SWG-assisted) waveguide is proposed for dispersion flattening. Tuning the refractive index, which is a powerful tool in dispersion engineering, can be carried out through adjusting the properties of the SWG regions. It is particularly beneficial for controlling the flattened dispersion bandwidth. This will also eliminate the need for integration of other less compatible materials with silicon. Moreover, the SWG-assisted waveguide can be easily fabricated through a single etch-step process. By engineering the structural parameters of the waveguide, an ultra-flat dispersion profile with a total dispersion variation of 10 (ps/nm/km) over a wide bandwidth of 1615 nm is obtained. The possibility of bandwidth expansion, the fabrication friendly design, and the flattened dispersion profile of the proposed waveguide make it promising for wideband nonlinear applications.

Integrated Optical Synthetic Aperture Radar Processor.

DTIC Science & Technology

1987-09-01

acoustooptic cell was employed to input each radar return into a time-and-space integrating optical architecture comprised of several lenses, a CCD area array...acoustooptic cell and parallel rib waveguide structure. During the course of the literature survey, we became aware of an elegant and poten- tially profound...wave.) scatterer at (f , A(t) is the far-field pattern of the antenna. From the geometry of Si. 1. R can be written as [I-2R,/c - nT1 r(t) = A(nT) rectj

Wide band cryogenic ultra-high vacuum microwave absorber

DOEpatents

Campisi, I.E.

1992-05-12

An absorber waveguide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the waveguide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the waveguide. 11 figs.

Vapor-Redissolution Technique for Reduction of POLYMER/Si Arrayed Waveguide Grating Loss

NASA Astrophysics Data System (ADS)

Zhang, Haiming; Zhang, Daming; Qin, Zhenkun; Ma, Chunsheng

An efficient vapor-redissolution technique is used to greatly reduce sidewall scattering loss in the polymer arrayed waveguide grating (AWG) fabricated on a silicon substrate. Smoother sidewalls are achieved and verified by scanning electron microscopy. Reduction of sidewall scattering loss is further measured for the loss measurement of both straight waveguides and AWG devices. The sidewall loss in straight polymer waveguide is decreased by 2.1 dB/cm, the insertion loss of our AWG device is reduced by about 5.5 dB for the central channel and 6.7 dB for the edge channels, the crosstalk is reduced by 2.5 dB, and 3-dB bandwidth is narrowed by 0.05 nm after the vapor-redissoluton treatment.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

PubMed

Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

2016-12-15

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D₂O) in a D₂O-H₂O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D₂O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

NASA Technical Reports Server (NTRS)

Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

2005-01-01

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayn, I.; Mouradian, S.; Li, L.

2014-11-24

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

Performance of ultracompact copper-capped silicon hybrid plasmonic waveguide-ring resonators at telecom wavelengths.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2012-07-02

Ultracompact Cu-capped Si hybrid plasmonic waveguide-ring resonators (WRRs) with ring radii of 1.09-2.59 μm are fabricated on silicon on insulator substrates using standard complementary metal-oxide-semiconductor technology and characterized over the telecom wavelength range of 1.52-1.62 μm. The dependence of the spectral characteristics on the key structural parameters such as the Si core width, the ring radius, the separation gap between the ring and bus waveguides, and the ring configuration is systematically studied. A WRR with 2.59-μm radius and 0.250-μm nominal gap exhibits good performances such as normalized insertion loss of ~0.1 dB, extinction ratio of ~12.8 dB, free spectral range of ~47 nm, and quality factor of ~275. The resonance wavelength is redshifted by ~4.6 nm and an extinction ratio of ~7.5 dB is achieved with temperature increasing from 27 to 82°C. The corresponding effective thermo-optical coefficient (dn(g)/dT) is estimated to be ~1.6 × 10(-4) K(-1), which is contributed by the thermo-optical effect of both the Si core and the Cu cap, as revealed by numerical simulations. Combined with the compact size and the high thermal conductivity of Cu, various effective thermo-optical devices based on these Cu-capped plasmonic WRRs could be realized for seamless integration in existing Si electronic-photonic integrated circuits.

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared.

PubMed

Li, Fangxin; Jackson, Stuart D; Grillet, Christian; Magi, Eric; Hudson, Darren; Madden, Steven J; Moghe, Yashodhan; O'Brien, Christopher; Read, Andrew; Duvall, Steven G; Atanackovic, Peter; Eggleton, Benjamin J; Moss, David J

2011-08-01

We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8 dB/cm at λ = 1550 nm, ~1.1 to 1.4 dB/cm at λ = 2080 nm and < 2dB/cm at λ = 5.18 μm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yunshan; DeVore, Peter T. S.; Jalali, Bahram

Optical computing accelerators help alleviate bandwidth and power consumption bottlenecks in electronics. In this paper, we show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation and the recovery of a signal in the presence of multiplicative distortion. Finally, the function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

Hybrid plasmonic waveguide-assisted Metal–Insulator–Metal ring resonator for refractive index sensing

NASA Astrophysics Data System (ADS)

Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.

2018-05-01

A highly sensitive refractive index sensor based on an integrated hybrid plasmonic waveguide (HPWG) and a Metal-Insulator-Metal (M-I-M) micro-ring resonator is presented. In our design, there are two slot-waveguide-based micro-rings that encircle a gold disc. The outer slot WG is formed by the combination of Silicon-Air-Gold ring and the inner slot-waveguide is formed by Gold ring-Air-Gold disc. The slot-waveguide rings provide an interaction length sufficient to accumulate a detectable wavelength shift. The transmission spectrum and electric field distribution of this sensor structure are simulated using Finite Element Method (FEM). The sensitivity of this micro-ring resonator is achieved at 800 nm/RIU which is about six times higher than that of the conventional Si ring with the same geometry. Our proposed sensor design has a potential to find further applications in biomedical science and nano-photonic circuits.

Chiral spiral waveguides based on MMI crossings: theory and experiments

NASA Astrophysics Data System (ADS)

Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Vehmas, Tapani; Aalto, Timo

2016-03-01

We introduce a novel type of chiral spiral waveguide where the usual waveguide crossings are replaced by 100:0 Multimode Interferometers (MMIs), i.e. 2x2 splitters that couple all the input light in the cross output port. Despite the topological equivalence with the standard configuration, we show how resorting to long MMIs has non-trivial advantages in terms of footprint and propagation length. An accurate analytic model is also introduced to show the impact of nonidealities on the spiral performances, including propagation loss and cross-talk. We have designed and fabricated three chiral spirals on our platform, based on 3 μm thick silicon strip waveguides with 0.13 dB/cm propagation loss, and 1.58 mm long MMIs. The fabricated spirals have 7, 13 and 49 loops respectively, corresponding to the effective lengths 6.6 cm, 12.5 cm and 47.9 cm. The proposed model is successfully applied to the experimental results, highlighting MMI extinction ratio of about 16.5 dB and MMI loss of about 0.08 dB, that are much worse compared to the simulated 50 dB extinction and 0.01 dB loss. This imposes an upper limit to the number of rounds, because light takes shortcuts through the bar MMI ports. Nevertheless, the novel chiral spiral waveguides outperform what is achievable in mainstream silicon photonics platforms based on submicron waveguides in terms of length and propagation losses, and they are promising candidates for the realization of integrated gyroscopes. They can be significantly further improved by replacing the MMIs with adiabatic 100:0 splitters, ensuring lower cross-talk and broader bandwidth.

Realization of optical multimode TSV waveguides for Si-Interposer in 3D-chip-stacks

NASA Astrophysics Data System (ADS)

Killge, S.; Charania, S.; Richter, K.; Neumann, N.; Al-Husseini, Z.; Plettemeier, D.; Bartha, J. W.

2017-05-01

Optical connectivity has the potential to outperform copper-based TSVs in terms of bandwidth at the cost of more complexity due to the required electro-optical and opto-electrical conversion. The continuously increasing demand for higher bandwidth pushes the breakeven point for a profitable operation to shorter distances. To integrate an optical communication network in a 3D-chip-stack optical through-silicon vertical VIAs (TSV) are required. While the necessary effort for the electrical/optical and vice versa conversion makes it hard to envision an on-chip optical interconnect, a chip-to-chip optical link appears practicable. In general, the interposer offers the potential advantage to realize electro-optical transceivers on affordable expense by specific, but not necessarily CMOS technology. We investigated the realization and characterization of optical interconnects as a polymer based waveguide in high aspect ratio (HAR) TSVs proved on waferlevel. To guide the optical field inside a TSV as optical-waveguide or fiber, its core has to have a higher refractive index than the surrounding material. Comparing different material / technology options it turned out that thermal grown silicon dioxide (SiO2) is a perfect candidate for the cladding (nSiO2 = 1.4525 at 850 nm). In combination with SiO2 as the adjacent polymer layer, the negative resist SU-8 is very well suited as waveguide material (nSU-8 = 1.56) for the core. Here, we present the fabrication of an optical polymer based multimode waveguide in TSVs proved on waferlevel using SU-8 as core and SiO2 as cladding. The process resulted in a defect-free filling of waveguide TSVs with SU-8 core and SiO2 cladding up to aspect ratio (AR) 20:1 and losses less than 3 dB.

Si photonics technology for future optical interconnection

NASA Astrophysics Data System (ADS)

Zheng, Xuezhe; Krishnamoorthy, Ashok V.

2011-12-01

Scaling of computing systems require ultra-efficient interconnects with large bandwidth density. Silicon photonics offers a disruptive solution with advantages in reach, energy efficiency and bandwidth density. We review our progress in developing building blocks for ultra-efficient WDM silicon photonic links. Employing microsolder based hybrid integration with low parasitics and high density, we optimize photonic devices on SOI platforms and VLSI circuits on more advanced bulk CMOS technology nodes independently. Progressively, we successfully demonstrated single channel hybrid silicon photonic transceivers at 5 Gbps and 10 Gbps, and 80 Gbps arrayed WDM silicon photonic transceiver using reverse biased depletion ring modulators and Ge waveguide photo detectors. Record-high energy efficiency of less than 100fJ/bit and 385 fJ/bit were achieved for the hybrid integrated transmitter and receiver, respectively. Waveguide grating based optical proximity couplers were developed with low loss and large optical bandwidth to enable multi-layer intra/inter-chip optical interconnects. Thermal engineering of WDM devices by selective substrate removal, together with WDM link using synthetic wavelength comb, we significantly improved the device tuning efficiency and reduced the tuning range. Using these innovative techniques, two orders of magnitude tuning power reduction was achieved. And tuning cost of only a few 10s of fJ/bit is expected for high data rate WDM silicon photonic links.

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

PubMed Central

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

PubMed

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10^-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

PubMed

Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

2011-10-10

We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

Design and simulation of MEMS microvalves for silicon photonic biosensor chip

NASA Astrophysics Data System (ADS)

Amemiya, Yoshiteru; Nakashima, Yuuto; Maeda, Jun; Yokoyama, Shin

2018-04-01

For the early and easy diagnosis of diseases, we have proposed a silicon photonic biosensor chip with two kinds of MEMS microvalves for a multiple-item detection system. The driving voltage of the vertical type with the circular-plate capacitor structure and that of the lateral type with the comb-shaped electrode are investigated. From mechanical calculations, the driving voltage of the vertical type is estimated to be 30 V and that of the lateral type to be 15 V. The propagation loss at the intersecting waveguides of arrayed ring-resonator biosensors is also estimated. In the case of optimized intersecting waveguides, more than 67% transmittance of TE-mode light is simulated for the series connection of 20 intersecting waveguides. It is confirmed that it is possible to fabricate an 8 × 12 arrayed biosensor chip in an area of 1 × 1.5 mm2 taking the device size of the microvalves into consideration. We have, for the first time, designed a whole system, including sensors and a fluid channel with MEMS microvalves.

Silicon-based highly-efficient fiber-to-waveguide coupler for high index contrast systems

NASA Astrophysics Data System (ADS)

Nguyen, Victor; Montalbo, Trisha; Manolatou, Christina; Agarwal, Anu; Hong, Ching-yin; Yasaitis, John; Kimerling, L. C.; Michel, Jurgen

2006-02-01

A coupler to efficiently transfer broadband light from a single-mode optical fiber to a single-mode high-index contrast waveguide has been fabricated on a silicon substrate. We utilized a novel coupling scheme, with a vertically asymmetric design consisting of a stepwise parabolic graded index profile combined with a horizontal taper, to simultaneously confine light in both directions. Coupling efficiency has been measured as a function of the device dimensions. The optimal coupling efficiency is achieved for structures whose length equals the focal distance of the graded index and whose input width is close to the mode field diameter of the fiber. The fabricated structure is compact, robust and highly efficient, with an insertion loss of 2.2dB at 1550nm. The coupler exhibits less than 1dB variation in coupling efficiency in the measured spectral range from 1520nmto1620nm. The lowest insertion loss of 1.9dB is measured at 1540nm. The coupler design offers highly efficient coupling for single mode waveguides of core indices up to 2.2.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Mid-IR soliton compression in silicon optical fibers and fiber tapers.

PubMed

Peacock, Anna C

2012-03-01

Numerical simulations are used to investigate soliton compression in silicon core optical fibers at 2.3 μm in the mid-infrared waveguide regime. Compression in both standard silicon fibers and fiber tapers is compared to establish the relative compression ratios for a range of input pulse conditions. The results show that tapered fibers can be used to obtain higher levels of compression for moderate soliton orders and thus lower input powers. © 2012 Optical Society of America

Porous silicon micro-resonator implemented by standard photolithography process for sensing application

NASA Astrophysics Data System (ADS)

Girault, P.; Azuelos, P.; Lorrain, N.; Poffo, L.; Lemaitre, J.; Pirasteh, P.; Hardy, I.; Thual, M.; Guendouz, M.; Charrier, J.

2017-10-01

A micro-resonator based on porous silicon ridge waveguides is implemented by a large scale standard photolithography process to obtain a low cost and sensitive sensor based on volume detection principle instead of the evanescent one usually used. The porous nature of the ridge waveguides allows the target molecules to be infiltrated in the core and to be detected by direct interaction with the propagated light. Racetrack resonator with radius of 100 μm and a coupling length of 70 μm is optically characterized for the volume detection of different concentrations of glucose. A high sensitivity of 560 nm/RIU is reached with only one micro-resonator and a limit of detection of 8.10-5 RIU, equivalent to a glucose concentration of 0.7 g/L, is obtained.

Giant nonlinear response at a plasmonic nanofocus drives efficient four-wave mixing

NASA Astrophysics Data System (ADS)

Nielsen, Michael P.; Shi, Xingyuan; Dichtl, Paul; Maier, Stefan A.; Oulton, Rupert F.

2017-12-01

Efficient optical frequency mixing typically must accumulate over large interaction lengths because nonlinear responses in natural materials are inherently weak. This limits the efficiency of mixing processes owing to the requirement of phase matching. Here, we report efficient four-wave mixing (FWM) over micrometer-scale interaction lengths at telecommunications wavelengths on silicon. We used an integrated plasmonic gap waveguide that strongly confines light within a nonlinear organic polymer. The gap waveguide intensifies light by nanofocusing it to a mode cross-section of a few tens of nanometers, thus generating a nonlinear response so strong that efficient FWM accumulates over wavelength-scale distances. This technique opens up nonlinear optics to a regime of relaxed phase matching, with the possibility of compact, broadband, and efficient frequency mixing integrated with silicon photonics.

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

PubMed

Wang, Wanjun; Zhou, Haifeng; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2012-06-15

We report on an experimental 3×3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1×N and N×N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3×3 switching functionality is demonstrated at a wavelength of 1.55 μm, with an average cross talk of -11.1  dB and a power consumption of 97.5 mW.

Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

NASA Astrophysics Data System (ADS)

Sacher, Wesley David

Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.

Transition Regimes of Jet Impingement on Rib and Cavity Superhydrophobic Surfaces

NASA Astrophysics Data System (ADS)

Johnson, Michael; Maynes, Daniel; Webb, Brent

2010-11-01

We report experimental results characterizing the dynamics of a liquid jet impinging normally on superhydrophobic surfaces spanning the Weber number (based on the jet velocity and diameter) range from 100 to 2000.The superhydrophobic surfaces are fabricated with both silicon and PDMS surfaces and exhibit micro-ribs and cavities coated with a hydrophobic coating. In general, the hydraulic jump exhibits an elliptical shape with the major axis being aligned parallel to the ribs, concomitant with the frictional resistance being smaller in the parallel direction than in the transverse direction. When the water depth downstream of the jump was imposed at a predetermined value, the major and minor axis of the jump increased with decreasing water depth, following classical hydraulic jump behavior. When no water depth was imposed, a regime change was observed within the Weber number range explained. For We < 1200, the flow forms a filament at the edge of the ellipse, where the flow moves along the rim of the ellipse toward the major axis. The filaments then join and continue to move parallel to the ribs. For 1200 < We < 1800, the filaments beyond the ellipse break into multiple streams and droplets and begin to take on a component perpendicular to the ribs. For We > 1800 a small amount of water flows purely in the transverse direction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pocha, Michael D.; Carey, Kent

The information age was maturing, and photonics was emerging as a significant technology with important'national security and commercial implications at the time of the CRADA. This was largely due to the vast information carrying capacity of optical beams and the availability of cheap.and effective optical fiber waveguides to guide the light. However, a major limitation to the widespread deployment of photonic systems was the high-cost (in an economic and performance sense) associated with coupling optical power between optoelectronic waveguide devices or between a device and an optical fiber. The problem was critical in the case of single-mode waveguide devices. Mitigatingmore » these costs would be a significant and pervasive enabler of the technology for a wide variety of applications that would have crucial defense and economic impact. The partners worked together to develop optical mode size converters on silicon substrates. Silicon was chosen because of its compatibility with the required photolithographic and micromachining techniques. By choosing silicon, these techniques could enable the close coupling of high-speed, high density silicon electronic circuitry to efficient low-cost photonics. The efficient coupling of electronics and photonics technologies would be important for many information age technologies. The joint nature of this project was intended to allow HP to benefit from some unique LLNL capabilities, and LLNL would be in a position to learn from HP and enhance its value to fundamental DP missions. Although the CRADA began as a hardware development project to develop the mode converter, it evolved into a software development venture. LLNL and HP researchers examined literature, performed some preliminary calculations, and evaluated production trade-offs of several known techniques to determine the best candidates for an integrated system.« less

Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

NASA Astrophysics Data System (ADS)

Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

2016-03-01

Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

A novel C-shaped, gold nanoparticle coated, embedded polymer waveguide for localized surface plasmon resonance based detection.

PubMed

Prabhakar, Amit; Mukherji, Soumyo

2010-12-21

In this study, a novel embedded optical waveguide based sensor which utilizes localized surface plasmon resonance of gold nanoparticles coated on a C-shaped polymer waveguide is being reported. The sensor, as designed, can be used as an analysis chip for detection of minor variations in the refractive index of its microenvironment, which makes it suitable for wide scale use as an affinity biosensor. The C-shaped waveguide coupled with microfluidic channel was fabricated by single step patterning of SU8 on an oxidized silicon wafer. The absorbance due to the localized surface plasmon resonance (LSPR) of SU8 waveguide bound gold nano particle (GNP) was found to be linear with refractive index changes between 1.33 and 1.37. A GNP coated C-bent waveguide of 200 μ width with a bend radius of 1 mm gave rise to a sensitivity of ~5 ΔA/RIU at 530 nm as compared to the ~2.5 ΔA/RIU (refractive index units) of the same dimension bare C-bend SU8 waveguide. The resolution of the sensor probe was ~2 × 10(-4) RIU.

Integrated Optical Dipole Trap for Cold Neutral Atoms with an Optical Waveguide Coupler

NASA Astrophysics Data System (ADS)

Lee, J.; Park, D. H.; Mittal, S.; Meng, Y.; Dagenais, M.; Rolston, S. L.

2013-05-01

Using an optical waveguide, an integrated optical dipole trap uses two-color (red and blue-detuned) traveling evanescent wave fields for trapping cold neutral atoms. To achieve longitudinal confinement, we propose using an integrated optical waveguide coupler, which provides a potential gradient along the beam propagation direction sufficient to confine atoms. This integrated optical dipole trap can support an atomic ensemble with a large optical depth due to its small mode area. Its quasi-TE0 waveguide mode has an advantage over the HE11 mode of a nanofiber, with little inhomogeneous Zeeman broadening at the trapping region. The longitudinal confinement eliminates the need for a 1D optical lattice, reducing collisional blockaded atomic loading, potentially producing larger ensembles. The waveguide trap allows for scalability and integrability with nano-fabrication technology. We analyze the potential performance of such integrated atom traps and present current research progress towards a fiber-coupled silicon nitride optical waveguide integrable with atom chips. Work is supported by the ARO Atomtronics MURI. Work is supported by the ARO Atomtronics MURI.

Waveguides in Thin Film Polymeric Materials

NASA Technical Reports Server (NTRS)

Sakisov, Sergey; Abdeldayem, Hossin; Venkateswarlu, Putcha; Teague, Zedric

1996-01-01

Results on the fabrication of integrated optical components in polymeric materials using photo printing methods will be presented. Optical waveguides were fabricated by spin coating preoxidized silicon wafers with organic dye/polymer solution followed by soft baking. The waveguide modes were studied using prism coupling technique. Propagation losses were measured by collecting light scattered from the trace of a propagation mode by either scanning photodetector or CCD camera. We observed the formation of graded index waveguides in photosensitive polyimides after exposure of UV light from a mercury arc lamp. By using a theoretical model, an index profile was reconstructed which is in agreement with the profile reconstructed by the Wentzel-Kramers-Brillouin calculation technique using a modal spectrum of the waveguides. Proposed mechanism for the formation of the graded index includes photocrosslinking followed by UV curing accompanied with optical absorption increase. We also developed the prototype of a novel single-arm double-mode interferometric sensor based on our waveguides. It demonstrates high sensitivity to the chance of ambient temperature. The device can find possible applications in aeropropulsion control systems.

Ultra-wideband high-speed Mach-Zehnder switch based on hybrid plasmonic waveguides.

PubMed

Janjan, Babak; Fathi, Davood; Miri, Mehdi; Ghaffari-Miab, Mohsen

2017-02-20

In this paper, the distinctive dispersion characteristic of hybrid plasmonic waveguides is exploited for designing ultra-wideband directional couplers. It is shown that by using optimized geometrical dimensions for hybrid plasmonic waveguides, nearly wavelength-independent directional couplers can be achieved. These broadband directional couplers are then used to design Mach-Zehnder-interferometer-based switches. Our simulation results show the ultra-wide bandwidth of ∼260  nm for the proposed hybrid plasmonic-waveguide-based switch. Further investigation of the proposed Mach-Zehnder switch confirms that because of the strong light confinement in the hybrid plasmonic waveguide structure, the switching time, power consumption, and overall footprint of the device can be significantly improved compared to silicon-ridge-waveguide-based Mach-Zehnder switches. For the Mach-Zehnder switch designed by using the optimized directional coupler, the switching time is found to be less than one picosecond, while the power consumption, V_πL_π figure of merit, and active length of the device are ∼61  fJ/bit, 85  V×μm, and 30 μm, respectively.

Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm

NASA Astrophysics Data System (ADS)

Yan, Y. C.; Faber, A. J.; de Waal, H.; Kik, P. G.; Polman, A.

1997-11-01

Erbium-doped multicomponent phosphate glass waveguides were deposited by rf sputtering techniques. The Er concentration was 5.3×1020cm-3. By pumping the waveguide at 980 nm with a power of ˜21 mW, a net optical gain of 4.1 dB at 1.535 μm was achieved. This high gain per unit length at low pump power could be achieved because the Er-Er cooperative upconversion interactions in this heavily Er-doped phosphate glass are very weak [the upconversion coefficient is (2.0±0.5)×10-18 cm3/s], presumably due to the homogeneous distribution of Er in the glass and due to the high optical mode confinement in the waveguide which leads to high pump power density at low pump power.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

DOE PAGES

Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...

2016-08-09

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less

Two-dimensional free-space beam steering with an optical phased array on silicon-on-insulator.

PubMed

Doylend, J K; Heck, M J R; Bovington, J T; Peters, J D; Coldren, L A; Bowers, J E

2011-10-24

We demonstrate a 16-channel, independently tuned waveguide surface grating optical phased array in silicon for two dimensional beam steering with a total field of view of 20° x 14°, beam width of 0.6° x 1.6°, and full-window background peak suppression of 10 dB. © 2011 Optical Society of America

The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

DTIC Science & Technology

2013-10-01

infrared applications; SiGeSn heterostructure photonics; group IV plasmonics with silicides , germanicides, doped Si, Ge or GeSn; Franz-Keldysh...SPP waveguide in which localized silicide or germanicide “conductors” are introduced to give local plasmonic confinement. Therefore, guided-wave...reconfigurable integrated optoelectronics, electro-optical logic in silicon, silicides for group IV plasmonics, reviews of third-order nonlinear optical

Ultralow-power all-optical processing of high-speed data signals in deposited silicon waveguides.

PubMed

Wang, Ke-Yao; Petrillo, Keith G; Foster, Mark A; Foster, Amy C

2012-10-22

Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER < 10(-9)) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.

Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

CMOS compatible on-chip telecom-band to mid-infrared supercontinuum generation in dispersion-engineered reverse strip/slot hybrid Si3N4 waveguide

NASA Astrophysics Data System (ADS)

Hui, Zhanqiang; Zhang, Lingxuan; Zhang, Wenfu

2018-01-01

A silicon nitride (Si3N4)-based reverse strip/slot hybrid waveguide with single vertical silica slot is proposed to acquire extremely low and flat chromatic dispersion profile. This is achieved by design and optimization of the geometrical structural parameters of the reverse hybrid waveguide. The flat dispersion varying between ±10 ps/(nm.km) is obtained over 610 nm bandwidth. Both the effective area and nonlinear coefficient of the waveguide across the entire spectral range of interest are investigated. This led to design of an on-chip supercontinuum (SC) source with -30 dB bandwidth of 2996 nm covering from 1.209 to 4.205 μm. Furthermore, we discuss the output signal spectral and temporal characteristic as a function of the pump power. Our waveguide design offers a CMOS compatible, low-cost/high yield (no photolithography or lift-off processes are necessary) on-chip SC source for near- and mid-infrared nonlinear applications.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Ponderomotive electron acceleration in a silicon-based nanoplasmonic waveguide.

PubMed

Sederberg, S; Elezzabi, A Y

2014-10-17

Ponderomotive electron acceleration is demonstrated in a semiconductor-loaded nanoplasmonic waveguide. Photogenerated free carriers are accelerated by the tightly confined nanoplasmonic fields and reach energies exceeding the threshold for impact ionization. Broadband (375 nm ≤ λ ≤ 650  nm) white light emission is observed from the nanoplasmonic waveguides. Exponential growth of visible light emission confirms the exponential growth of the electron population, demonstrating the presence of an optical-field-driven electron avalanche. Electron sweeping dynamics are visualized using pump-probe measurements, and a sweeping time of 1.98 ± 0.40 ps is measured. These findings offer a means to harness the potential of the emerging field of ultrafast nonlinear nanoplasmonics.

Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides

NASA Astrophysics Data System (ADS)

Wang, Zhaolu; Liu, Hongjun; Huang, Nan; Sun, Qibing; Li, Xuefeng

2014-01-01

Raman amplification based on stimulated Stokes Raman scattering (SSRS) and wavelength conversion based on coherent anti-Stokes Raman scattering (CARS) are theoretically investigated in silicon-on-sapphire (SOS) waveguides in the mid-infrared (IR) region. When the linear phase mismatch Δk is close to zero, the Stokes gain and conversion efficiency drop down quickly due to the effect of parametric gain suppression when the Stokes-pump input ratio is sufficiently large. The Stokes gain increases with the increase of Δk, whereas efficient wavelength conversion needs appropriate Δk under different pump intensities. The conversion efficiency at exact linear phase matching (Δk = 0) is smaller than that at optimal linear phase mismatch by a factor of about 28 dB when the pump intensity is 2 GW cm-2.

Three-dimensional patterning in polymer optical waveguides using focused ion beam milling

NASA Astrophysics Data System (ADS)

Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher

2016-07-01

Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

PubMed

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

PubMed

Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

2010-03-29

Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

Optical MEMS platform for low-cost on-chip integration of planar light circuits and optical switching

NASA Astrophysics Data System (ADS)

German, Kristine A.; Kubby, Joel; Chen, Jingkuang; Diehl, James; Feinberg, Kathleen; Gulvin, Peter; Herko, Larry; Jia, Nancy; Lin, Pinyen; Liu, Xueyuan; Ma, Jun; Meyers, John; Nystrom, Peter; Wang, Yao Rong

2004-07-01

Xerox Corporation has developed a technology platform for on-chip integration of latching MEMS optical waveguide switches and Planar Light Circuit (PLC) components using a Silicon On Insulator (SOI) based process. To illustrate the current state of this new technology platform, working prototypes of a Reconfigurable Optical Add/Drop Multiplexer (ROADM) and a l-router will be presented along with details of the integrated latching MEMS optical switches. On-chip integration of optical switches and PLCs can greatly reduce the size, manufacturing cost and operating cost of multi-component optical equipment. It is anticipated that low-cost, low-overhead optical network products will accelerate the migration of functions and services from high-cost long-haul markets to price sensitive markets, including networks for metropolitan areas and fiber to the home. Compared to the more common silica-on-silicon PLC technology, the high index of refraction of silicon waveguides created in the SOI device layer enables miniaturization of optical components, thereby increasing yield and decreasing cost projections. The latching SOI MEMS switches feature moving waveguides, and are advantaged across multiple attributes relative to alternative switching technologies, such as thermal optical switches and polymer switches. The SOI process employed was jointly developed under the auspice of the NIST APT program in partnership with Coventor, Corning IntelliSense Corp., and MicroScan Systems to enable fabrication of a broad range of free space and guided wave MicroOptoElectroMechanical Systems (MOEMS).

Chemical Sensors Based on Optical Ring Resonators

NASA Technical Reports Server (NTRS)

Homer, Margie; Manfreda, Allison; Mansour, Kamjou; Lin, Ying; Ksendzov, Alexander

2005-01-01

Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring res

Transmission and group-delay characterization of coupled resonator optical waveguides apodized through the longitudinal offset technique.

PubMed

Doménech, J D; Muñoz, P; Capmany, J

2011-01-15

In this Letter, the amplitude and group delay characteristics of coupled resonator optical waveguides apodized through the longitudinal offset technique are presented. The devices have been fabricated in silicon-on-insulator technology employing deep ultraviolet lithography. The structures analyzed consisted of three racetracks resonators uniform (nonapodized) and apodized with the aforementioned technique, showing a delay of 5 ± 3 ps and 4 ± 0.5 ps over 1.6 and 1.4 nm bandwidths, respectively.

Folded Coplanar Waveguide Slot Antenna on Silicon Substrates With a Polyimide Interface Layer

NASA Technical Reports Server (NTRS)

Bacon, Andrew; Ponchak, George E.; Papapolymerou, John; Bushyager, Nathan; Tentzeris, Manos; Williams, W. D. (Technical Monitor)

2002-01-01

A novel mm-wave Coplanar Waveguide (CPW) folded slot antenna is characterized on low-resistivity Si substrate (1 omega-cm) and a high resistivity Si substrate with a polyimide interface layer for the first time. The antenna resonates around 30 GHz with a return loss greater than 14.6 dB. Measured radiation patterns indicate the existence of a main lobe, but the radiation pattern is affected by a strong surface wave mode, which is greater in the high resistivity Si wafer.

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

PubMed

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

All-optical Integrated Switches Based on Azo-benzene Liquid Crystals on Silicon

DTIC Science & Technology

2011-11-01

Glass D263 SU8 Polymer Polymer NLC n̂ n̂ Refractive index @1.55 µm Materials n// = 1.689 n⊥= 1.502 n = 1.575 n = 1.516 E7 Glass D263 SU8 ...In the other case we have a nonlinear LCW based on glass substrates. It consists in a rectangular hollow realized in SU8 photoresist two glass...and discussion 5. All optical polymeric waveguide: methods, assumptions and procedure 6. All optical polymeric waveguide: results and discussion 7

Temperature Dependent Performance of Coplanar Waveguide (CPW) on Substrates of Various Materials

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Young, Paul

1994-01-01

The attenuation (a) and effective dielectric constant (E(sub eff)) of Coplanar Waveguide (CPW) transmission lines on high-resistivity silicon and diamond substrates as a function of both temperature and frequency are presented. The technique used to obtain the values for a and E(sub eff) involves the use of a unique cryogenic probe station designed and built by NASA. Attenuation of gold CPW lines on diamond substrates is compared with that of superconducting CPW lines.

Ultra-broadband and low-loss 3  dB optical power splitter based on adiabatic tapered silicon waveguides.

PubMed

Wang, Yang; Gao, Shitao; Wang, Ke; Skafidas, Efstratios

2016-05-01

A broadband, low-loss and polarization-insensitive 3 dB optical power splitter based on adiabatic tapered silicon waveguides is proposed and investigated. 3D-FDTD simulation results show that the splitter achieves an output transmission efficiency of nearly 50% over an ultra-broad wavelength range from 1200 to 1700 nm. The device is fabricated, and experimental results show that the splitter exhibits a low excess loss of <0.19  dB for the TE polarization and <0.14  dB for the TM polarization over the entire measured wavelength range from 1530 to 1600 nm, while having an adiabatic taper length of only 5 μm. In addition, the measured power uniformity of the cascaded 1×8 splitter is only 0.47 dB, and 0.17 dB for the TE and TM polarizations, respectively. With the advantages of low loss, broad bandwidth, and compact size, the proposed splitter is a promising element for large-scale silicon integrated photonic circuits.

Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

NASA Astrophysics Data System (ADS)

Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

2008-02-01

Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Design of a wideband tunable AWG using electro-optic polymers and push-pull electrode configuration for ultrafast photonic switching applications

NASA Astrophysics Data System (ADS)

Asquini, Rita; d'Alessandro, Antonio; Salusti, Andrea; Gizzi, Claudio

2003-08-01

A tunable waveguide grating router (WGR) design is reported, where a subpicosecond phase shift is obtained by means of the electro-optically induced refractive index change in the arms of an arrayed-waveguide grating (AWG) made of highly nonlinear poled polymer CLD-75/APC. The polymer consists of a guest-host system, formed by a ring-locked phenyltetraene bridged cromophore dispersed in an amorphous polycarbonate, with coefficient r33=55pm/V and propagation losses of 1.7dB/cm. We propose a multilayer structure on Si substrate, where segments of each waveguide of the AWG are sandwiched between a ground gold electrode and electrodes whose length varies over the AWG. Numerical simulations of a device with electrode length difference of 250μm show a tuning range of 11nm centered at 1550nm by varying the applied voltage from -90V to +90V. From the optimized AWG, a WGR operating with 16 channels spaced by 100GHz has been designed. The WGR is made of single-mode rib waveguides and buffers whose thicknesses are respectively 1.8μm and 1.7μm. A broader tunability range is obtained using the push-pull technique, which induces a refractive index change of opposite sign in two halves of the AWG. A crosstalk of -40dB with tuning range of 22nm over the C-band was figured out.

Trace-gas Spectroscopy of Methane on a Silicon Photonic Chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Eric; Xiong, Chi; Martin, Yves

Recent advances in hybrid integrated silicon photonic (SiPh) technologies are enabling the migration of conventional free-space optical spectroscopic sensors onto a compact on-chip platform [1-3]. In addition to the small spatial footprint and power efficiency, we envision such sensors to be scalably manufactured using existing CMOS-compatible foundry processes, thus providing disruptive SWaP-C (size, weight, power, and cost) benefits in contrast to commercially available optical sensors. Initial demonstration of evanescent TDLAS (tunable diode laser absorption spectroscopy) of methane (CH4) on a passive SiPh waveguide has indicated minimum fractional absorption of (αL)min = 3.3×10-5 Hz-1/2, which is on-par with state-of-art open-path TDLASmore » sensor systems [4]. Given the general recent movement toward cleaner fuels, CH4 fugitive emissions monitoring is of significant interest given the extremely high radiative forcing potential [5]. For a nominal waveguide length of 30 cm with Γ = 25 % evanescent exposure, this corresponds to ~ 10 ppmv detection sensitivity at 1 s integration time, and further sensitivity enhancement is expected with even longer waveguides, as the laser RIN typically dominates our measurements at nominal waveguide lengths. Despite the excellent sensitivities for short-term integration periods, long-term measurements (> 10 s) are potentially limited on a silicon platform due to the high material thermo-optic coefficient, resulting in significant susceptibility of Fabry-Perot etalons to drift in the presence of even small (~ 1 mK) thermal fluctuations. To this end, customized spectral fitting algorithms have played a significant role in both fringe drift mitigation and peak detection fidelity (e.g. in the presence of a passing CH4 plume), which are crucial for enhancing long-term stability without the need for frequent sensor recalibration. A variety of spectral algorithms have been designed for this purpose, and details will be presented at the meeting.« less

Hybrid optofluidic biosensors

NASA Astrophysics Data System (ADS)

Parks, Joshua W.

Optofluidics, born of the desire to create a system containing microfluidic environments with integrated optical elements, has seen dramatic increases in popularity over the last 10 years. In particular, the application of this technology towards chip based molecular sensors has undergone significant development. The most sensitive of these biosensors interface liquid- and solid-core antiresonant reflecting optical waveguides (ARROWs). These sensor chips are created using conventional silicon microfabrication. As such, ARROW technology has previously been unable to utilize state-of-the-art microfluidic developments because the technology used--soft polydimethyl siloxane (PDMS) micromolded chips--is unamenable to the silicon microfabrication workflows implemented in the creation of ARROW detection chips. The original goal of this thesis was to employ hybrid integration, or the connection of independently designed and fabricated optofluidic and microfluidic chips, to create enhanced biosensors with the capability of processing and detecting biological samples on a single hybrid system. After successful demonstration of this paradigm, this work expanded into a new direction--direct integration of sensing and detection technologies on a new platform with dynamic, multi-dimensional photonic re-configurability. This thesis reports a number of firsts, including: • 1,000 fold optical transmission enhancement of ARROW optofluidic detection chips through thermal annealing, • Detection of single nucleic acids on a silicon-based ARROW chip, • Hybrid optofluidic integration of ARROW detection chips and passive PDMS microfluidic chips, • Hybrid optofluidic integration of ARROW detection chips and actively controllable PDMS microfluidic chips with integrated microvalves, • On-chip concentration and detection of clinical Ebola nucleic acids, • Multimode interference (MMI) waveguide based wavelength division multiplexing for detection of single influenza virions, • All PDMS platform created from monolithically integrated solid- and liquid-core waveguides with single particle detection efficiency and directly integrated microvalves, featuring: ∘ Tunable/tailorable PDMS MMI waveguides, ∘ Lightvalves (optical switch/fluidic microvalve) with the ability to dynamically control light and fluid flow simultaneously, ∘ Lightvalve trap architecture with the ability to physically trap, detect, and analyze single biomolecules.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

PubMed

Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

2011-12-19

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

Electromagnetic crystal based terahertz thermal radiators and components

NASA Astrophysics Data System (ADS)

Wu, Ziran

This dissertation presents the investigation of thermal radiation from three-dimensional electromagnetic crystals (EMXT), as well as the development of a THz rapid prototyping fabrication technique and its application in THz EMXT components and micro-system fabrication and integration. First, it is proposed that thermal radiation from a 3-D EMXT would be greatly enhanced at the band gap edge frequency due to the redistribution of photon density of states (DOS) within the crystal. A THz thermal radiator could thus be built upon a THz EMXT by utilizing the exceptional emission peak(s) around its band gap frequency. The thermal radiation enhancement effects of various THz EMXT including both silicon and tungsten woodpile structures (WPS) and cubic photonic cavity (CPC) array are explored. The DOS of all three structures are calculated, and their thermal radiation intensities are predicted using Planck's Equation. These calculations show that the DOS of the silicon and tungsten WPS can be enhanced by a factor of 11.8 around 364 GHz and 2.6 around 406 GHz respectively, in comparison to the normal blackbody radiation at same frequencies. An enhancement factor of more than 100 is obtained in calculation from the CPC array. A silicon WPS with a band gap around 200 GHz has been designed and fabricated. Thermal emissivity of the silicon WPS sample is measured with a control blackbody as reference. And enhancements of the emission from the WPS over the control blackbody are observed at several frequencies quite consistent with the theoretical predictions. Second, the practical challenge of THz EMXT component and system fabrication is met by a THz rapid prototyping technique developed by us. Using this technique, the fabrications of several EMXTs with 3D electromagnetic band gaps in the 100-400 GHz range are demonstrated. Characterization of the samples via THz Time-domain Spectroscopy (THz-TDS) shows very good agreement with simulation, confirming the build accuracy of this prototyping approach. Third, an all-dielectric THz waveguide is designed, fabricated and characterized. The design is based on hollow-core EMXT waveguide, and the fabrication is implemented with the THz prototyping method. Characterization results of the waveguide power loss factor show good consistency with the simulation, and waveguide propagation loss as low as 0.03 dB/mm at 105 GHz is demonstrated. Several design parameters are also varied and their impacts on the waveguide performance investigated theoretically. Finally, a THz EMXT antenna based on expanding the defect radius of the EMXT waveguide to a horn shape is proposed and studied. The boresight directivity and main beam angular width of the optimized EMXT horn antenna is comparable with a copper horn antenna of the same dimensions at low frequencies, and much better than the copper horn at high frequencies. The EMXT antenna has been successfully fabricated via the same THz prototyping, and we believe this is the first time an EMXT antenna of this architecture is fabricated. Far-field measurement of the EMXT antenna radiation pattern is undergoing. Also, in order to integrate planar THz solid-state devices (especially source and detector) and THz samples under test with the potential THz micro-system fabricate-able by the prototyping approach, an EMXT waveguide-to-microstrip line transition structure is designed. The structure uses tapered solid dielectric waveguides on both ends to transit THz energy from the EMXT waveguide defect onto the microstrip line. Simulation of the transition structure in a back-to-back configuration yields about -15 dB insertion loss mainly due to the dielectric material loss. The coupling and radiation loss of the transition structure is estimated to be -2.115 dB. The fabrication and characterization of the transition system is currently underway. With all the above THz components realized in the future, integrated THz micro-systems manufactured by the same prototyping technique will be achieved, with low cost, high quality, self-sufficiency, and great customizability.

Bragg gratings: Optical microchip sensors

NASA Astrophysics Data System (ADS)

Watts, Sam

2010-07-01

A direct UV writing technique that can create multiple Bragg gratings and waveguides in a planar silica-on-silicon chip is enabling sensing applications ranging from individual disposable sensors for biotechnology through to multiplexed sensor networks in pharmaceutical manufacturing.

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon–Gallium-Nitride Slot Waveguide Structures

PubMed Central

Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

2016-01-01

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530–1565 nm) into four output ports with low insertion losses (0.07 dB). PMID:28773638

Multilayered photonic integration on SOI platform using waveguide-based bridge structure

NASA Astrophysics Data System (ADS)

Majumder, Saikat; Chakraborty, Rajib

2018-06-01

A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

Simultaneous wavelength conversion of ASK and DPSK signals based on four-wave-mixing in dispersion engineered silicon waveguides.

PubMed

Xu, Lin; Ophir, Noam; Menard, Michael; Lau, Ryan Kin Wah; Turner-Foster, Amy C; Foster, Mark A; Lipson, Michal; Gaeta, Alexander L; Bergman, Keren

2011-06-20

We experimentally demonstrate four-wave-mixing (FWM)-based continuous wavelength conversion of optical differential-phase-shift-keyed (DPSK) signals with large wavelength conversion ranges as well as simultaneous wavelength conversion of dual-wavelength channels with mixed modulation formats in 1.1-cm-long dispersion-engineered silicon waveguides. We first validate up to 100-nm wavelength conversion range for 10-Gb/s DPSK signals, showcasing the capability to perform phase-preserving operations at high bit rates in chip-scale devices over wide conversion ranges. We further validate the wavelength conversion of dual-wavelength channels modulated with 10-Gb/s packetized phase-shift-keyed (PSK) and amplitude-shift-keyed (ASK) signals; demonstrate simultaneous operation on multiple channels with mixed formats in chip-scale devices. For both configurations, we measure the spectral and temporal responses and evaluate the performances using bit-error-rate (BER) measurements.

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

PubMed

Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

2009-01-05

We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

Interference effects on guided Cherenkov emission in silicon from perpendicular, oblique, and parallel boundaries

NASA Astrophysics Data System (ADS)

Couillard, M.; Yurtsever, A.; Muller, D. A.

2010-05-01

Waveguide electromagnetic modes excited by swift electrons traversing Si slabs at normal and oblique incidence are analyzed using monochromated electron energy-loss spectroscopy and interpreted using a local dielectric theory that includes relativistic effects. At normal incidence, sharp spectral features in the visible/near-infrared optical domain are directly assigned to p -polarized modes. When the specimen is tilted, s -polarized modes, which are completely absent at normal incidence, become visible in the loss spectra. In the tilted configuration, the dispersion of p -polarized modes is also modified. For tilt angles higher than ˜50° , Cherenkov radiation, the phenomenon responsible for the excitation of waveguide modes, is expected to partially escape the silicon slab and the influence of this effect on experimental measurements is discussed. Finally, we find evidence for an interference effect at parallel Si/SiO2 interfaces, as well as a delocalized excitation of guided Cherenkov modes.

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.

PubMed

Mercante, Andrew J; Shi, Shouyuan; Yao, Peng; Xie, Linli; Weikle, Robert M; Prather, Dennis W

2018-05-28

We present a thin film crystal ion sliced (CIS) LiNbO 3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm -1 . The design, fabrication, and characterization of our broadband modulator is presented in this work.

Fabrication and Characterization of Thermo-Optic Mach-Zehnder Silicon Modulator

NASA Astrophysics Data System (ADS)

Park, Yeongho

This thesis focuses on the modeling, design, and fabrication of the Thermo-Optic Mach-Zehnder Modulator, which is one of the simple active devices in silicon photonics. The Mach-Zehnder interferometer (MZI) was formed as an optical path on a silicon on insulator (SOI) wafer of 2040+/-80 nm thick, and the thermo-optic effect was used to modulate the infrared light of 1553 nm wavelength by controlling the temperature of the one arm of the MZI. To fabricate and understand the Si photonic device, the whole process from theory to the measurement setup is introduced. Additionally, all the fabrication details and some informative experiments which were performed during the fabrication are discussed for students who will study the more developed devices. The width of the designed waveguide is 4 mum, but the width of the fabricated waveguide is 3.0+/-0.2 mum due to the isotropic etching. For the lithography for both patterning waveguides and metal contacts, the AZ 5214 photoresist was used, and the details of the lithography was discussed. Furthermore, the lift-off method was performed and introduced to solve the over-etching problem. The fabricated metal contacts can withstand up to 1.6W, and the electric power 0.3W is required to make Pi phase difference according to the simulation result by the simulation software Lumerical. The optical output of the device was not detected due to the huge losses from the sidewall roughness and the insertion loss, so it is discussed in the experimental measurement chapter.

Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits.

PubMed

Liu, Liu; Ding, Yunhong; Yvind, Kresten; Hvam, Jørn M

2011-06-20

A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6 dB and an extinction ratio of 12 dB have been obtained experimentally in the whole C-band.

RF Transmission Lines on Silicon Substrates

NASA Technical Reports Server (NTRS)

Ponchak, George E.

1999-01-01

A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.

Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides.

PubMed

Wang, Ke-Yao; Foster, Amy C

2012-04-15

We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of -13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n(2)=7.43×10(-13) cm(2)/W, approximately an order of magnitude larger than that of single crystal silicon. © 2012 Optical Society of America

Integrated waveguide and nanostructured sensor platform for surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Pearce, Stuart J.; Pollard, Michael E.; Oo, SweZin; Chen, Ruiqi; Kalsi, Sumit; Charlton, Martin D. B.

2014-01-01

Limitations of current sensors include large dimensions, sometimes limited sensitivity and inherent single-parameter measurement capability. Surface-enhanced Raman spectroscopy can be utilized for environment and pharmaceutical applications with the intensity of the Raman scattering enhanced by a factor of 10. By fabricating and characterizing an integrated optical waveguide beneath a nanostructured precious metal coated surface a new surface-enhanced Raman spectroscopy sensing arrangement can be achieved. Nanostructured sensors can provide both multiparameter and high-resolution sensing. Using the slab waveguide core to interrogate the nanostructures at the base allows for the emission to reach discrete sensing areas effectively and should provide ideal parameters for maximum Raman interactions. Thin slab waveguide films of silicon oxynitride were etched and gold coated to create localized nanostructured sensing areas of various pitch, diameter, and shape. These were interrogated using a Ti:Sapphire laser tuned to 785-nm end coupled into the slab waveguide. The nanostructured sensors vertically projected a Raman signal, which was used to actively detect a thin layer of benzyl mercaptan attached to the sensors.

Linear spectral response of a Fano-resonant graded-stub filter based on pillar-photonic-crystal waveguides.

PubMed

Tokushima, Masatoshi

2018-02-01

To achieve high spectral linearity, we developed a Fano-resonant graded-stub filter on the basis of a pillar-photonic-crystal (PhC) waveguide. In a numerical simulation, the availability of a linear region within a peak-to-bottom wavelength span was nearly doubled compared to that of a sinusoidal spectrum, which was experimentally demonstrated with a fabricated silicon-pillar PhC stub filter. The high linearity of this filter is suitable for optical modulators used in multilevel amplitude modulation.

Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires.

PubMed

Li, Jian; Kirkwood, Robert A; Baker, Luke J; Bosworth, David; Erotokritou, Kleanthis; Banerjee, Archan; Heath, Robert M; Natarajan, Chandra M; Barber, Zoe H; Sorel, Marc; Hadfield, Robert H

2016-06-27

We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo₈₃Si₁₇ thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of approximately 5% at 1550 nm wavelength. Under these conditions 10 Hz dark count rate and 51 ps full width at half maximum (FWHM) timing jitter is observed.

The mid-IR silicon photonics sensor platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in solution; ii) gas sensing in air and iii) on-chip spectrometry provide good insight into the tradeoffs being made en route to ubiquitous sensor deployment in an Internet of Things.

Rigid thin windows for vacuum applications

DOEpatents

Meyer, Glenn Allyn; Ciarlo, Dino R.; Myers, Booth Richard; Chen, Hao-Lin; Wakalopulos, George

1999-01-01

A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.

Experimental analysis of silicon oxycarbide thin films and waveguides

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea

2017-05-01

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

NASA Astrophysics Data System (ADS)

Chen, Hsuen-Li; Hsieh, Chung-I; Cheng, Chao-Chia; Chang, Chia-Pin; Hsu, Wen-Hau; Wang, Way-Seen; Liu, Po-Tsun

2005-07-01

Ultralow dielectric constant (<2.0) porous materials have received much attention as next-generation dielectric materials. In this study, optical properties of porous-methyl-silsesquioxane(MSQ)-like films (porous polysilazane, PPSZ) were characterized for optical waveguide devices applications. Measured results indicate that the refractive index is decreased to approximately 1.320 as the hydration time exceeds 24 h. The measured refractive index is about 1.163 at a wavelength of 1550 nm. PPSZ films have low absorption in the 500 to 2000 nm wavelength regime. Because of their relatively low refractive index and low absorption over a large spectral regime, PPSZ films can be good cladding materials for use in optically integrated devices with many high-refractive-index materials such as silicon oxide, silicon nitride, silicon, and polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.

Self-phase-modulation induced spectral broadening in silicon waveguides

NASA Astrophysics Data System (ADS)

Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram

2004-03-01

The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm2 peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

Self-phase-modulation induced spectral broadening in silicon waveguides.

PubMed

Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram

2004-03-08

The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm(2) peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

The role of group index engineering in series-connected photonic crystal microcavities for high density sensor microarrays

PubMed Central

Zou, Yi; Chakravarty, Swapnajit; Zhu, Liang; Chen, Ray T.

2014-01-01

We experimentally demonstrate an efficient and robust method for series connection of photonic crystal microcavities that are coupled to photonic crystal waveguides in the slow light transmission regime. We demonstrate that group index taper engineering provides excellent optical impedance matching between the input and output strip waveguides and the photonic crystal waveguide, a nearly flat transmission over the entire guided mode spectrum and clear multi-resonance peaks corresponding to individual microcavities that are connected in series. Series connected photonic crystal microcavities are further multiplexed in parallel using cascaded multimode interference power splitters to generate a high density silicon nanophotonic microarray comprising 64 photonic crystal microcavity sensors, all of which are interrogated simultaneously at the same instant of time. PMID:25316921

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Four-port coupled channel-guide device based on 2D photonic crystal structure

NASA Astrophysics Data System (ADS)

Camargo, Edilson A.; Chong, Harold M. H.; De La Rue, Richard M.

2004-12-01

We have fabricated and measured a four-port coupled channel-waveguide device using W1 channel waveguides oriented along ΓK directions in a two-dimensional (2D) hole-based planar photonic crystal (PhC) based on silicon-on-insulator (SOI) waveguide material, at operation wavelengths around 1550 nm. 2D FDTD simulations and experimental results are shown and compared. The structure has been designed using a mode conversion approach, combined with coupled-mode concepts. The overall length of the photonic crystal structure is typically about 39 μm and the structure has been fabricated using a combination of direct-write electron-beam lithography (EBL) and dry-etch processing. Devices were measured using a tunable laser with end-fire coupling into the planar structure.

Inverse design of near unity efficiency perfectly vertical grating couplers

NASA Astrophysics Data System (ADS)

Michaels, Andrew; Yablonovitch, Eli

2018-02-01

Efficient coupling between integrated optical waveguides and optical fibers is essential to the success of integrated photonics. While many solutions exist, perfectly vertical grating couplers which scatter light out of a waveguide in the direction normal to the waveguide's top surface are an ideal candidate due to their potential to reduce packaging complexity. Designing such couplers with high efficiency, however, has proven difficult. In this paper, we use electromagnetic inverse design techniques to optimize a high efficiency two-layer perfectly vertical silicon grating coupler. Our base design achieves a chip-to-fiber coupling efficiency of over 99% (-0.04 dB) at 1550 nm. Using this base design, we apply subsequent constrained optimizations to achieve vertical couplers with over 96% efficiency which are fabricable using a 65 nm process.

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing

PubMed Central

Shi, Yaocheng; Ma, Ke; Dai, Daoxin

2016-01-01

A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO2 buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity. PMID:26950132

Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing.

PubMed

Shi, Yaocheng; Ma, Ke; Dai, Daoxin

2016-03-03

A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO₂ buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity.

Hydraulic Jumps on Superhydrophobic Surfaces Exhibiting Ribs and Cavities

NASA Astrophysics Data System (ADS)

Johnson, Michael; Russell, Benton; Maynes, Daniel; Webb, Brent

2009-11-01

We report experimental results characterizing the dynamics of a liquid jet impinging normally on superhydrophobic surfaces spanning the Weber number (based on the jet velocity and diameter) range from 100 to 1400. The superhydrophobic surfaces are fabricated with both silicon and PDMS surfaces and exhibit micro-ribs and cavities coated with a hydrophobic coating. In general, the hydraulic jump exhibits an elliptical shape with the major axis being aligned parallel to the ribs, concomitant with the frictional resistance being smaller in the parallel direction than in the transverse direction. When the water depth downstream of the jump was imposed at a predetermined value, the major and minor axis of the jump increased with decreasing water depth, following classical hydraulic jump behavior. When no water depth was imposed, however, the total projected area of the ellipse exhibited a nearly linear dependence on the jet Weber number, and was nominally invariant with varying hydrophobicity and relative size of the ribs and cavities. For this scenario the Weber number (based on the local radial velocity and water depth prior to the jump) was of order unity at the jump location. The results also reveal that for increasing relative size of the cavities, the ratio of the ellipse axis (major-to-minor) increases.

Bulk diamond optical waveguides fabricated by focused femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Hadden, J. P.; Sotillo, Belén.; Bharadwaj, Vibhav; Rampini, Stefano; Bosia, Federico; Picollo, Federico; Sakakura, Masaaki; Chiappini, Andrea; Fernandez, Toney T.; Osellame, Roberto; Miura, Kiyotaka; Ferrari, Maurizio; Ramponi, Roberta; Olivero, Paolo; Barclay, Paul E.; Eaton, Shane M.

2017-02-01

Diamond's nitrogen-vacancy (NV) centers show great promise in sensing applications and quantum computing due to their long electron spin coherence time and their ability to be located, manipulated and read out using light. The electrons of the NV center, largely localized at the vacancy site, combine to form a spin triplet, which can be polarized with 532- nm laser light, even at room temperature. The NV's states are isolated from environmental perturbations making their spin coherence comparable to trapped ions. An important breakthrough would be in connecting, using waveguides, multiple diamond NVs together optically. However, the inertness of diamond is a significant hurdle for the fabrication of integrated optics similar to those that revolutionized silicon photonics. In this work we show the possibility of buried waveguide fabrication in diamond, enabled by focused femtosecond high repetition rate laser pulses. We use μRaman spectroscopy to gain better insight into the structure and refractive index profile of the optical waveguides.

High-speed detection at two micrometres with monolithic silicon photodiodes

NASA Astrophysics Data System (ADS)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

MWP phase shifters integrated in PbS-SU8 waveguides.

PubMed

Hervás, Javier; Suárez, Isaac; Pérez, Joaquín; Cantó, Pedro J Rodríguez; Abargues, Rafael; Martínez-Pastor, Juan P; Sales, Salvador; Capmany, José

2015-06-01

We present new kind of microwave phase shifters (MPS) based on dispersion of PbS colloidal quantum dots (QDs) in commercially available photoresist SU8 after a ligand exchange process. Ridge PbS-SU8 waveguides are implemented by integration of the nanocomposite in a silicon platform. When these waveguides are pumped at wavelengths below the band-gap of the PbS QDs, a phase shift in an optically conveyed (at 1550 nm) microwave signal is produced. The strong light confinement produced in the ridge waveguides allows an improvement of the phase shift as compared to the case of planar structures. Moreover, a novel ridge bilayer waveguide composed by a PbS-SU8 nanocomposite and a SU8 passive layer is proposed to decrease the propagation losses of the pump beam and in consequence to improve the microwave phase shift up to 36.5° at 25 GHz. Experimental results are reproduced by a theoretical model based on the slow light effect produced in a semiconductor waveguide due to the coherent population oscillations. The resulting device shows potential benefits respect to the current MPS technologies since it allows a fast tunability of the phase shift and a high level of integration due to its small size.

High-Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Colliders

NASA Astrophysics Data System (ADS)

Tantawi, Sami G.; Tamura, Fumihiko

2000-04-01

We describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders. The switch systems described here have two designs. Both designs consist of two 3dB hybrids and active modules. In the first design the module is composed of a cascaded active phase shifter. In the second design the module uses arrays of SPST (Single Pole Single Throw) switches. Each cascaded element of the phase shifter and the SPST switch has similar design. The active element consists of symmetrical three-port tee-junctions and an active waveguide window in the symmetrical arm of the tee-junction. The design methodology of the elements and the architecture of the whole switch system are presented. We describe the scaling law that governs the relation between power handling capability and number of elements. The design of the active waveguide window is presented. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of tens of megawatts at X-band.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yongjin, E-mail: wangyj@njupt.edu.cn; Zhu, Guixia; Gao, Xumin

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junctionmore » InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.« less

Demonstration of free space coherent optical communication using integrated silicon photonic orbital angular momentum devices.

PubMed

Su, Tiehui; Scott, Ryan P; Djordjevic, Stevan S; Fontaine, Nicolas K; Geisler, David J; Cai, Xinran; Yoo, S J B

2012-04-23

We propose and demonstrate silicon photonic integrated circuits (PICs) for free-space spatial-division-multiplexing (SDM) optical transmission with multiplexed orbital angular momentum (OAM) states over a topological charge range of -2 to +2. The silicon PIC fabricated using a CMOS-compatible process exploits tunable-phase arrayed waveguides with vertical grating couplers to achieve space division multiplexing and demultiplexing. The experimental results utilizing two silicon PICs achieve SDM mux/demux bit-error-rate performance for 1‑b/s/Hz, 10-Gb/s binary phase shifted keying (BPSK) data and 2-b/s/Hz, 20-Gb/s quadrature phase shifted keying (QPSK) data for individual and two simultaneous OAM states. © 2012 Optical Society of America

Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

PubMed

Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

2017-04-03

We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

PubMed

Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

2014-12-01

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

NASA Astrophysics Data System (ADS)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

PubMed

Yin, Chenxuan; Chen, Yujie; Jiang, Xiaohui; Zhang, Yanfeng; Shao, Zengkai; Xu, Pengfei; Yu, Siyuan

2016-10-15

Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

NASA Astrophysics Data System (ADS)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Surface plasmons in new waveguide structures containing ultra-thin metal and silicon layers

NASA Astrophysics Data System (ADS)

Shabat, M. M.; Ubeid, M. F.; Abu Rahma, M. A.

2018-05-01

Reflected and transmitted powers due to the interaction of electromagnetic waves with a structure containing thin metal and silicon layer are investigated in more detail. The formulations for the transverse electric wave case are provided. Transfer matrix method is used to find the reflection and the transmission coefficients at each interface. Numerical results are presented to show the effect of the structure parameters, the incidence angle and the wavelength on the reflected, transmitted and loss powers.

Using carrier-depletion silicon modulators for optical power monitoring.

PubMed

Yu, Hui; Korn, Dietmar; Pantouvaki, Marianna; Van Campenhout, Joris; Komorowska, Katarzyna; Verheyen, Peter; Lepage, Guy; Absil, Philippe; Hillerkuss, David; Alloatti, Luca; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-11-15

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caër, Charles; Le Roux, Xavier; Cassan, Eric, E-mail: eric.cassan@u-psud.fr

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

Research on SOI-based micro-resonator devices

NASA Astrophysics Data System (ADS)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of < 400 ps and crosstalk < -23 dB, and > 10 Gbit/s high speed microring modulators.

Porous silicon ring resonator for compact, high sensitivity biosensing applications

DOE PAGES

Rodriguez, Gilberto A.; Hu, Shuren; Weiss, Sharon M.

2015-01-01

A ring resonator is patterned on a porous silicon slab waveguide to produce a compact, high quality factor biosensor with a large internal surface area available for enhanced recognition of biological and chemical molecules. The porous nature of the ring resonator allows molecules to directly interact with the guided mode. Quality factors near 10,000 were measured for porous silicon ring resonators with a radius of 25 μm. A bulk detection sensitivity of 380 nm/RIU was measured upon exposure to salt water solutions. Specific detection of nucleic acid molecules was demonstrated with a surface detection sensitivity of 4 pm/nM.

Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing.

PubMed

Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T

2012-04-01

We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.

Optical confinement and light guiding in high dielectric contrast materials systems

NASA Astrophysics Data System (ADS)

Foresi, James S.

A study of silicon photonic devices, including waveguides and microcavities, is presented in this thesis. The high index difference of Silicon-On-Insulator materials is used to design submicron devices capable of light localization and routing. Losses due to interface roughness between the high and low index materials are measured to be 40dB/cm. An analysis of lithographically induced interface roughness is performed and a method for evaluating nanometer-scale roughness is presented. High index differences lead to compact bends and power splitters. Bends of 2.0μm radius are measured to have losses less than 0.5dB. Splitting angles of 5o with losses less than 1.5dB are demonstrated. The bends and splitters are the most compact devices of their kind. The design, fabrication and analysis of two light confining devices in the SOI system are presented: photonic band gap (PBG) and microdisk microcavities. A PBG waveguide microcavity with minimum dimensions of 0.10μm is fabricated and transmission measurements reveal cavity Q's of 265, a resonant wavelength of 1564nm, and a modal volume of 0.27/mu m3. This is the first demonstration of PBG resonance at optical frequencies. The PBG microcavity volume is two orders of magnitude smaller than has been achieved in other microcavity devices. Microdisk and microring resonators are demonstrated. A waveguide-coupled microring is shown to operate as a channel dropping filter with Q's of 250 and a free spectral range of 25nm. The application of the microcavity devices to spontaneous emission control of erbium-doped silicon is analyzed. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

Review of silicon photonics: history and recent advances

NASA Astrophysics Data System (ADS)

Ye, Winnie N.; Xiong, Yule

2013-09-01

Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting. Mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor (CMOS) fabrication processing technology, silicon has becoming the material choice for photonic and optoelectronic circuits with low cost, ultra-compact device footprint, and high-density integration. This review paper provides an overview on silicon photonics, by highlighting the early work from the mid-1980s on the fundamental building blocks such as silicon platforms and waveguides, and the main milestones that have been achieved so far in the field. A summary of reported work on functional elements in both passive and active devices, as well as the applications of the technology in interconnect, sensing, and solar cells, is identified.

Crystal structure of laser-induced subsurface modifications in Si

NASA Astrophysics Data System (ADS)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in't Veld, A. J.

2015-08-01

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si -iii/Si -xii occur as a result of the laser irradiation.

Mid-infrared integrated photonics on silicon: a perspective

NASA Astrophysics Data System (ADS)

Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

2017-12-01

The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

High-contrast grating hollow-core waveguide splitter applied to optical phased array

NASA Astrophysics Data System (ADS)

Zhao, Che; Xue, Ping; Zhang, Hanxing; Chen, Te; Peng, Chao; Hu, Weiwei

2014-11-01

A novel hollow-core (HW) Y-branch waveguide splitter based on high-contrast grating (HCG) is presented. We calculated and designed the HCG-HW splitter using Rigorous Coupled Wave Analysis (RCWA). Finite-different timedomain (FDTD) simulation shows that the splitter has a broad bandwidth and the branching loss is as low as 0.23 dB. Fabrication is accomplished with standard Silicon-On-Insulator (SOI) process. The experimental measurement results indicate its good performance on beam splitting near the central wavelength λ = 1550 nm with a total insertion loss of 7.0 dB.

Phase 2: Array automated assembly task low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Jones, G. T.

1979-01-01

Several microwave systems for use in solar cell fabrication were developed and experimentally tested. The first system used a standing wave rectangular waveguide horn applicator. Satisfactory results were achieved with this system for impedance matching and wafer surface heating uniformity. The second system utilized a resonant TM sub 011 mode cylindrical cavity but could not be employed due to its poor energy coupling efficiency. The third and fourth microwave systems utilized a circular waveguide operating in the TM sub 01 and TM sub 11 but had problems with impedance matching, efficiency, and field uniformity.

Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching

NASA Astrophysics Data System (ADS)

Zhang, Nikai

Solar radiation can be converted directly into electricity by using the photovoltaic effect, which represents the principle of operation of solar cells. Currently, most solar cells are made of crystalline silicon and have a conversion efficiency of about 20% or less. Multi-junction solar cells, made of III-V compound semiconductors, can have efficiencies in excess of 40%. The main factor that prohibits such high-efficiency technologies from wider acceptance is the cost. An alternative approach to using large-area expensive solar cells is to employ lower cost optics and concentrate the solar radiation to smaller cell area, which is the basic principle of solar concentrators. In this thesis, we consider a solar concentrator module that consists of a combination of a lens array and a slab waveguide with etched conical holes on one side of the waveguide, which are aligned with the lenslets. Sunlight coming through each of these lenslets is focused on the backside of the waveguide, where a coupling structure (an etched cone) is fabricated. This coupler changes the propagation direction of the incident light in such a way that light is guided through total internal reflection (TIR) within the glass slab and eventually reaches a solar cell, which is properly mounted on the side of the slab. The concept of this concentrated photovoltaic (CPV) system is based on a planar light guide solar concentrator module, proposed earlier by another group. This project builds on the original idea by including the following substantial modifications. The lens array is to be made of solid glass by a mold technology and provided to us by our industrial partner, Libbey, Inc., as opposed to silicone on glass technology, in which the lenses are made out of silicone and sit on a glass substrate. The coupling structures are cone-shaped holes etched directly into the solid glass waveguide, as opposed to coupling structures that are formed by addition of polymeric layer and consequent patterning. The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.

Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices

NASA Astrophysics Data System (ADS)

Hoang, Thu Trang; Ngo, Quang Minh; Vu, Dinh Lam; Le, Khai Q.; Nguyen, Truong Khang; Nguyen, Hieu P. T.

2018-01-01

Shrinking the linewidth of resonances induced by multiple coupled resonators is comprehensively analyzed using the coupled-mode theory (CMT) in time. Two types of coupled resonators under investigation are coupled resonator optical waveguides (CROWs) and side-coupled resonators with waveguide (SCREW). We examine the main parameters influencing on the spectral response such as the number of resonators (n) and the phase shift (φ) between two adjacent resonators. For the CROWs geometry consisting of n coupled resonators, we observe the quality (Q) factor of the right- and left-most resonant lineshapes increases n times larger than that of a single resonator. For the SCREW geometry, relying on the phase shift, sharp, and asymmetric resonant lineshape of the high Q factor a narrow linewidth of the spectral response could be achieved. We employ the finite-difference time-domain (FDTD) method to design and simulate two proposed resonators for practical applications. The proposed coupled resonators in silicon-on-insulator (SOI) slotted two-dimensional (2-D) photonic crystals (PhCs) filled and covered with a low refractive index organic material. Slotted PhC waveguides and cavities are designed to enhance the electromagnetic intensity and to confine the light into small cross-sectional area with low refractive index so that efficient optical devices could be achieved. A good agreement between the theoretical CMT analysis and the FDTD simulation is shown as an evidence for our accurate investigation. All-optical switches based on the CROWs in the SOI slotted 2-D PhC waveguide that are filled and covered by a nonlinear organic cladding to overcome the limitations of its well-known intrinsic properties are also presented. From the calculations, we introduce a dependency of the normalized linewidth of the right-most resonance and its switching power of the all-optical switches on number of resonator, n. This result might provide a guideline for all-optical signal processing on a silicon PhC chip design.

Theoretical Study of Monolayer and Double-Layer Waveguide Love Wave Sensors for Achieving High Sensitivity.

PubMed

Li, Shuangming; Wan, Ying; Fan, Chunhai; Su, Yan

2017-03-22

Love wave sensors have been widely used for sensing applications. In this work, we introduce the theoretical analysis of the monolayer and double-layer waveguide Love wave sensors. The velocity, particle displacement and energy distribution of Love waves were analyzed. Using the variations of the energy repartition, the sensitivity coefficients of Love wave sensors were calculated. To achieve a higher sensitivity coefficient, a thin gold layer was added as the second waveguide on top of the silicon dioxide (SiO₂) waveguide-based, 36 degree-rotated, Y-cut, X-propagating lithium tantalate (36° YX LiTaO₃) Love wave sensor. The Love wave velocity was significantly reduced by the added gold layer, and the flow of wave energy into the waveguide layer from the substrate was enhanced. By using the double-layer structure, almost a 72-fold enhancement in the sensitivity coefficient was achieved compared to the monolayer structure. Additionally, the thickness of the SiO₂ layer was also reduced with the application of the gold layer, resulting in easier device fabrication. This study allows for the possibility of designing and realizing robust Love wave sensors with high sensitivity and a low limit of detection.

Photonics and Optoelectronics

DTIC Science & Technology

2013-03-07

Distribution Outline/Agenda • Nanophotonics: plasmonics, nanostructures, metasurfaces etc • Integrated Nanophotonics & Silicon Photonics...Highlights Nanophotonics Nanophotonics: metasurfaces , nanostructures, plasmonics etc • Shalaev – Broadband Light Bending with Plasmonic...solitons, slot waveguide, “ Metasurface ” collimator etc " World Changing Ideas 2012” Electronic Tattoos, sciencemag , J. Rogers UICU P

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

PN-type carrier-induced filter with modulatable extinction ratio.

PubMed

Fang, Qing; Tu, Xiaoguang; Song, Junfeng; Jia, Lianxi; Luo, Xianshu; Yang, Yan; Yu, Mingbin; Lo, Guoqiang

2014-12-01

We demonstrate the first PN-type carrier-induced silicon waveguide Bragg grating filter on a SOI wafer. The optical extinction ratio of this kind of filter can be efficiently modulated under both reverse and forward biases. The carrier-induced Bragg grating based on a PN junction is fabricated on the silicon waveguide using litho compensation technology. The measured optical bandwidth and the extinction ratio of the filter are 0.45 nm and 19 dB, respectively. The optical extinction ratio modulation under the reverse bias is more than 11.5 dB and it is more than 10 dB under the forward bias. Only 1-dB optical transmission loss is realized in this Bragg grating under a reverse bias. The shifting rates of the central wavelength under forward and reverse biases are ~-1.25 nm/V and 0.01 nm/V, respectively. The 3-dB modulation bandwidth of this filter is 5.1 GHz at a bias of -10 V.

Graphene-on-silicon nitride waveguide photodetector with interdigital contacts

NASA Astrophysics Data System (ADS)

Gao, Yun; Tao, Li; Tsang, Hon Ki; Shu, Chester

2018-05-01

Graphene photodetectors have attracted research attention because of their potential high speed and broad spectral bandwidth. However, their low responsivity and quantum efficiency compared with germanium or III-V material based photodetectors limit their practical use. Here, we demonstrate a chemical vapor deposited graphene photodetector integrated on a silicon nitride waveguide. Interdigital metal contacts are used to reduce the channel spacing down to ˜200 nm. At zero bias, a metal-graphene junction is used for photodetection, which is beneficial for an electro-optic bandwidth of ˜33 GHz in the 1550 nm wavelength band. At a bias of 1 V, a photoconductive responsivity of ˜2.36 A/W at 1550 nm was observed. The high speed and high responsivity make the device promising for photodetection in the telecommunication C-band. A diffusion model is applied to study the carrier transition process in the graphene channel. By adopting this model, the high performance of the device is explained. The main limitation in the responsivity of graphene photodetectors is also analyzed.

Realization of a compact polarization splitter-rotator on silicon.

PubMed

Dai, Daoxin; Wu, Hao

2016-05-15

A novel compact polarization splitter-rotator (PSR) is proposed and realized with silicon-on-insulator nanowires. The present PSR consists of an adiabatic taper, an asymmetric directional coupler (ADC), and a multimode interference (MMI) mode filter. The adiabatic taper enables an efficient mode conversion from the launched TM₀ mode to the TE₁ mode in a wide waveguide, which is then coupled to the TE₀ mode of a narrow waveguide through the ADC. Meanwhile, the launched TE₀ mode does not have mode conversion and outputs from the through port directly. The MMI mode filter is cascaded at the through port to filter out the residual power of the TE₁ mode so that the extinction ratio of the PSR is improved greatly. The total length of the PSR is ∼70  μm and the fabricated PSR has an extinction ratio of ∼20  dB over a broadband ranging from 1547 to 1597 nm.

Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

PubMed

Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

2017-06-16

Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects

PubMed Central

Tseng, Chih-Kuo; Chen, Wei-Ting; Chen, Ku-Hung; Liu, Han-Din; Kang, Yimin; Na, Neil; Lee, Ming-Chang M.

2013-01-01

A novel technique using surface tension to locally bond germanium (Ge) on silicon (Si) is presented for fabricating high performance Ge/Si photodiodes. Surface tension is a cohesive force among liquid molecules that tends to bring contiguous objects in contact to maintain a minimum surface energy. We take advantage of this phenomenon to fabricate a heterojunction optoelectronic device where the lattice constants of joined semiconductors are different. A high-speed Ge/Si heterojunction waveguide photodiode is presented by microbonding a beam-shaped Ge, first grown by rapid-melt-growth (RMG) method, on top of a Si waveguide via surface tension. Excellent device performances such as an operating bandwidth of 17 GHz and a responsivity of 0.66 and 0.70 A/W at the reverse bias of −4 and −6 V, respectively, are demonstrated. This technique can be simply implemented via modern complementary metal-oxide-semiconductor (CMOS) fabrication technologies for integrating Ge on Si devices. PMID:24232956

Thin-film magnetless Faraday rotators for compact heterogeneous integrated optical isolators

NASA Astrophysics Data System (ADS)

Karki, Dolendra; Stenger, Vincent; Pollick, Andrea; Levy, Miguel

2017-06-01

This report describes the fabrication, characterization, and transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth-substituted rare-earth iron garnets were produced from commercially available materials by mechanical lapping, dice polishing, and crystal-ion-slicing. Eleven- μ m -thick films were shown to retain the 45 ° Faraday rotation of the bulk material to within 2 ° at 1.55 μ m wavelength without re-poling. Anti-reflection coated films evince 0.09 dB insertion loses and better than -20 dB extinction ratios. Lower extinction ratios than the bulk are ascribed to multimode propagation. Significantly larger extinction ratios are predicted for single-mode waveguides. Faraday rotation, extinction ratios, and insertion loss tests on He-ion implanted slab waveguides of the same material yielded similar results. The work culminated with bond alignment and transfer of 7 μ m -thick crystal-ion-sliced 50 × 480 μ m 2 films onto silicon photonic substrates.

Split-Block Waveguide Polarization Twist for 220 to 325 GHz

NASA Technical Reports Server (NTRS)

Ward, John; Chattopadhyay, Goutam

2008-01-01

A split-block waveguide circuit that rotates polarization by 90 has been designed with WR-3 input and output waveguides, which are rectangular waveguides used for a nominal frequency range of 220 to 325 GHz. Heretofore, twisted rectangular waveguides equipped with flanges at the input and output have been the standard means of rotating the polarizations of guided microwave signals. However, the fabrication and assembly of such components become difficult at high frequency due to decreasing wavelength, such that twisted rectangular waveguides become impractical at frequencies above a few hundred gigahertz. Conventional twisted rectangular waveguides are also not amenable to integration into highly miniaturized subassemblies of advanced millimeter- and submillimeter-wave detector arrays now undergoing development. In contrast, the present polarization- rotating waveguide can readily be incorporated into complex integrated waveguide circuits such as miniaturized detector arrays fabricated by either conventional end milling of metal blocks or by deep reactive ion etching of silicon blocks. Moreover, the present split-block design can be scaled up in frequency to at least 5 THz. The main step in fabricating a splitblock polarization-rotating waveguide of the present design is to cut channels having special asymmetrically shaped steps into mating upper and lower blocks (see Figure 1). The dimensions of the steps are chosen to be consistent with the WR-3 waveguide cross section, which is 0.864 by 0.432 mm. The channels are characterized by varying widths with constant depths of 0.432, 0.324, and 0.216 mm and by relatively large corner radii to facilitate fabrication. The steps effect both a geometric transition and the corresponding impedance-matched electromagnetic-polarization transition between (1) a WR-3 rectangular waveguide oriented with the electric field vector normal to the block mating surfaces and (2) a corresponding WR-3 waveguide oriented with its electric field vector parallel to the mating surfaces of the blocks. A prototype has been built and tested. Figure 2 presents test results indicative of good performance over nearly the entire WR-3 waveguide frequency band.

Enhancement of coupling ratios in SOI based asymmetrical optical directional couplers

NASA Astrophysics Data System (ADS)

Pendam, Nagaraju; Vardhani, Chunduru Parvatha

2017-11-01

A novel design of slab structured asymmetrical optical directional coupler with S-bend waveguides on silicon-on-insulator (SOI) platform has been designed by using R-Soft CAD tool. Beam propagation method (BPM) is used for light propagation analysis. The simulation results of asymmetrical optical directional couplers are reported. We find that the asymmetrical directional coupler has lower coupling ratios and higher extinction ratios with waveguide parameters such as width, wavelength, waveguide spacing, and coupling length. Simulation results designate that the coupling efficiency for transverse electric (TE) and transverse magnetic (TM) modes can reach about more than 95% and extinction ratio about 6 dB when the coupling length is 6 mm for both the polarization modes and insertion loss is 17 dB with same coupling length 6 mm at central wavelength 1550 nm.

Chemical sensors fabricated by a photonic integrated circuit foundry

NASA Astrophysics Data System (ADS)

Stievater, Todd H.; Koo, Kee; Tyndall, Nathan F.; Holmstrom, Scott A.; Kozak, Dmitry A.; Goetz, Peter G.; McGill, R. Andrew; Pruessner, Marcel W.

2018-02-01

We describe the detection of trace concentrations of chemical agents using waveguide-enhanced Raman spectroscopy in a photonic integrated circuit fabricated by AIM Photonics. The photonic integrated circuit is based on a five-centimeter long silicon nitride waveguide with a trench etched in the top cladding to allow access to the evanescent field of the propagating mode by analyte molecules. This waveguide transducer is coated with a sorbent polymer to enhance detection sensitivity and placed between low-loss edge couplers. The photonic integrated circuit is laid-out using the AIM Photonics Process Design Kit and fabricated on a Multi-Project Wafer. We detect chemical warfare agent simulants at sub parts-per-million levels in times of less than a minute. We also discuss anticipated improvements in the level of integration for photonic chemical sensors, as well as existing challenges.

Optical phased arrays with evanescently-coupled antennas

DOEpatents

Sun, Jie; Watts, Michael R; Yaacobi, Ami; Timurdogan, Erman

2015-03-24

An optical phased array formed of a large number of nanophotonic antenna elements can be used to project complex images into the far field. These nanophotonic phased arrays, including the nanophotonic antenna elements and waveguides, can be formed on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) processes. Directional couplers evanescently couple light from the waveguides to the nanophotonic antenna elements, which emit the light as beams with phases and amplitudes selected so that the emitted beams interfere in the far field to produce the desired pattern. In some cases, each antenna in the phased array may be optically coupled to a corresponding variable delay line, such as a thermo-optically tuned waveguide or a liquid-filled cell, which can be used to vary the phase of the antenna's output (and the resulting far-field interference pattern).

Guided wave opto-acoustic device

DOEpatents

Jarecki, Jr., Robert L.; Rakich, Peter Thomas; Camacho, Ryan; Shin, Heedeuk; Cox, Jonathan Albert; Qiu, Wenjun; Wang, Zheng

2016-02-23

The various technologies presented herein relate to various hybrid phononic-photonic waveguide structures that can exhibit nonlinear behavior associated with traveling-wave forward stimulated Brillouin scattering (forward-SBS). The various structures can simultaneously guide photons and phonons in a suspended membrane. By utilizing a suspended membrane, a substrate pathway can be eliminated for loss of phonons that suppresses SBS in conventional silicon-on-insulator (SOI) waveguides. Consequently, forward-SBS nonlinear susceptibilities are achievable at about 3000 times greater than achievable with a conventional waveguide system. Owing to the strong phonon-photon coupling achievable with the various embodiments, potential application for the various embodiments presented herein cover a range of radiofrequency (RF) and photonic signal processing applications. Further, the various embodiments presented herein are applicable to applications operating over a wide bandwidth, e.g. 100 MHz to 50 GHz or more.

Fully suspended slot waveguide platform

NASA Astrophysics Data System (ADS)

Zhou, Wen; Cheng, Zhenzhou; Wu, Xinru; Sun, Xiankai; Tsang, Hon Ki

2018-02-01

A fully suspended slot waveguide (FSSWG) platform, including straight slot waveguides, 90° bends, high-Q racetrack resonators, and strip-to-slot mode converters, is demonstrated for broadband and low-loss operation in the mid-infrared spectral region. The proposed FSSWG platform has inherent merits of a broad spectral range of transparency which is limited only by the absorption of silicon, strong light-analyte interaction, good mechanical stability, and single lithography step fabrication process. By using asymmetric FSSWGs, the propagation loss, bending loss, and intrinsic optical Q factor are demonstrated to be 2.8 dB/cm, 0.15 dB/90°, and 12 600, respectively. The average conversion efficiency of a mode converter is 95.4% over a bandwidth of 170 nm and 97.0% at 2231 nm. The FSSWG platform would be promising for a long-range and cavity-enhanced light-analyte interaction.

Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

NASA Astrophysics Data System (ADS)

Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

2013-05-01

In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

Silicon oxynitride-on-glass waveguide array refractometer with wide sensing range and integrated read-out (Conference Presentation)

NASA Astrophysics Data System (ADS)

Viegas, Jaime; Mayeh, Mona; Srinivasan, Pradeep; Johnson, Eric G.; Marques, Paulo V. S.; Farahi, Faramarz

2017-02-01

In this work, a silicon oxynitride-on-silica refractometer is presented, based on sub-wavelength coupled arrayed waveguide interference, and capable of low-cost, high resolution, large scale deployment. The sensor has an experimental spectral sensitivity as high as 3200 nm/RIU, covering refractive indices ranging from 1 (air) up to 1.43 (oils). The sensor readout can be performed by standard spectrometers techniques of by pattern projection onto a camera, followed by optical pattern recognition. Positive identification of the refractive index of an unknown species is obtained by pattern cross-correlation with a look-up calibration table based algorithm. Given the lower contrast between core and cladding in such devices, higher mode overlap with single mode fiber is achieved, leading to a larger coupling efficiency and more relaxed alignment requirements as compared to silicon photonics platform. Also, the optical transparency of the sensor in the visible range allows the operation with light sources and camera detectors in the visible range, of much lower capital costs for a complete sensor system. Furthermore, the choice of refractive indices of core and cladding in the sensor head with integrated readout, allows the fabrication of the same device in polymers, for mass-production replication of disposable sensors.

High-contrast germanium-doped silica-on-silicon waveguides

NASA Astrophysics Data System (ADS)

Dumais, Patrick; Callender, Claire; Blanchetière, Chantal; Ledderhof, Chris

2012-10-01

Silica-on-silicon planar lightwave circuits have a number of advantages including stability and low insertion loss to optical fiber networks. Standard GeO2 doping levels in the waveguide cores lead to a refractive index contrast, n/n, of 0.75%-2%. This range of index contrast requires relatively large bend radii in order to minimize bend losses. This limits the density scaling of these circuits. By using high dopant levels for a Δn/n of 4%, the bend radius can be decreased to less than 1 mm, from which significant gains in optical circuit density can be obtained. In addition, low-loss ring resonators with free spectral ranges of a few tens of gigahertz can be realized, enabling some additional optical signal processing and filtering on that scale. Optical devices with such high dopant levels have been reported by Bellman et al. in 2004 [1] but to the authors' knowledge, no other experimental work on high-delta GeO2-doped waveguides has been reported since. In this paper, we present experimental measurements on high-delta devices including directional couplers, MMI couplers, Mach-Zehnder interferometers, and ring resonators. Device performance, including propagation loss, bend loss, interferometer contrast ratio and birefringence will be presented. We demonstrate that ring resonators with 40 GHz free spectral range can be fabricated for optical signal processing.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Crystal structure of laser-induced subsurface modifications in Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.

2015-06-04

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

NASA Astrophysics Data System (ADS)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

PubMed

Sen, Mrinal; Das, Mukul K

2015-11-01

In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

Raman Amplification and Tunable Pulse Delays in Silicon Waveguides

NASA Astrophysics Data System (ADS)

Rukhlenko, Ivan D.; Garanovich, Ivan L.; Premaratne, Malin; Sukhorukov, Andrey A.; Agrawal, Govind P.

2010-10-01

The nonlinear process of stimulated Raman scattering is important for silicon photonics as it enables optical amplification and lasing. However, generally employed numerical approaches provide very little insight into the contribution of different silicon Raman amplifier (SRA) parameters. In this paper, we solve the coupled pump-signal equations analytically and derive an exact formula for the envelope of a signal pulse when picosecond optical pulses are amplified inside a SRA pumped by a continuous-wave laser beam. Our solution is valid for an arbitrary pulse shape and fully accounts for the Raman gain-dispersion effects, including temporal broadening and group-velocity reduction. Our results are useful for optimizing the performance of SRAs and for engineering controllable signal delays.

Silica-on-silicon waveguide quantum circuits.

PubMed

Politi, Alberto; Cryan, Martin J; Rarity, John G; Yu, Siyuan; O'Brien, Jeremy L

2008-05-02

Quantum technologies based on photons will likely require an integrated optics architecture for improved performance, miniaturization, and scalability. We demonstrate high-fidelity silica-on-silicon integrated optical realizations of key quantum photonic circuits, including two-photon quantum interference with a visibility of 94.8 +/- 0.5%; a controlled-NOT gate with an average logical basis fidelity of 94.3 +/- 0.2%; and a path-entangled state of two photons with fidelity of >92%. These results show that it is possible to directly "write" sophisticated photonic quantum circuits onto a silicon chip, which will be of benefit to future quantum technologies based on photons, including information processing, communication, metrology, and lithography, as well as the fundamental science of quantum optics.