Profilometry of thin films on rough substrates by Raman spectroscopy

PubMed Central

Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf , Stefaan; Ballif , Christophe; Fejfar, Antonín

2016-01-01

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. PMID:27922033

Technological processes of grating light valve as diffractive spatial light modulator in laser phototypesetting system

NASA Astrophysics Data System (ADS)

Zhang, Wei; Geng, Yu; Hou, Changlun; Yang, Guoguang; Bai, Jian

2008-11-01

Grating Light Valve (GLV) is a kind of optics device based on Micro-Opto-Electro-Mechanical System (MOEMS) technology, utilizing diffraction principle to switch, attenuate and modulate light. In this paper, traditional GLV device's structure and its working principle are illuminated, and a kind of modified GLV structure is presented, with details introduction of the fabrication technology. The GLV structure includes single crystal silicon substrate, silicon dioxide isolating layer, aluminum layer of fixed ribbons and silicon nitride of movable ribbons. In the fabrication, lots of techniques are adopted, such as low-pressure chemical vapor deposition (LPCVD), photolithography, etching and evaporation. During the fabrication processes, Photolithography is a fundamental and fatal technology, which determines etching result and GLV quality. Some methods are proposed through repeated experiments, to improve etching result greatly and guide the practical application. This kind of GLV device can be made both small and inexpensively, and has been tested to show proper range of actuation under DC bias, with good performance. The GLV device also has merits such as low cost, simple technology, high fill ratio and low driving voltage. It can properly be well used and match the demands of high light power needed in laser phototypesetting system, as a high-speed, high-resolution light modulator.

Optofluidic encapsulation and manipulation of silicon microchips using image processing based optofluidic maskless lithography and railed microfluidics.

PubMed

Chung, Su Eun; Lee, Seung Ah; Kim, Jiyun; Kwon, Sunghoon

2009-10-07

We demonstrate optofluidic encapsulation of silicon microchips using image processing based optofluidic maskless lithography and manipulation using railed microfluidics. Optofluidic maskless lithography is a dynamic photopolymerization technique of free-floating microstructures within a fluidic channel using spatial light modulator. Using optofluidic maskless lithography via computer-vision aided image processing, polymer encapsulants are fabricated for chip protection and guiding-fins for efficient chip conveying within a fluidic channel. Encapsulated silicon chips with guiding-fins are assembled using railed microfluidics, which is an efficient guiding and heterogeneous self-assembly system of microcomponents. With our technology, externally fabricated silicon microchips are encapsulated, fluidically guided and self-assembled potentially enabling low cost fluidic manipulation and assembly of integrated circuits.

Adaptive optics scanning laser ophthalmoscope using liquid crystal on silicon spatial light modulator: Performance study with involuntary eye movement

NASA Astrophysics Data System (ADS)

Huang, Hongxin; Toyoda, Haruyoshi; Inoue, Takashi

2017-09-01

The performance of an adaptive optics scanning laser ophthalmoscope (AO-SLO) using a liquid crystal on silicon spatial light modulator and Shack-Hartmann wavefront sensor was investigated. The system achieved high-resolution and high-contrast images of human retinas by dynamic compensation for the aberrations in the eyes. Retinal structures such as photoreceptor cells, blood vessels, and nerve fiber bundles, as well as blood flow, could be observed in vivo. We also investigated involuntary eye movements and ascertained microsaccades and drifts using both the retinal images and the aberrations recorded simultaneously. Furthermore, we measured the interframe displacement of retinal images and found that during eye drift, the displacement has a linear relationship with the residual low-order aberration. The estimated duration and cumulative displacement of the drift were within the ranges estimated by a video tracking technique. The AO-SLO would not only be used for the early detection of eye diseases, but would also offer a new approach for involuntary eye movement research.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Reconfigurable wavefront sensor for ultrashort pulses.

PubMed

Bock, Martin; Das, Susanta Kumar; Fischer, Carsten; Diehl, Michael; Börner, Peter; Grunwald, Ruediger

2012-04-01

A highly flexible Shack-Hartmann wavefront sensor for ultrashort pulse diagnostics is presented. The temporal system performance is studied in detail. Reflective operation is enabled by programming tilt-tolerant microaxicons into a liquid-crystal-on-silicon spatial light modulator. Nearly undistorted pulse transfer is obtained by generating nondiffracting needle beams as subbeams. Reproducible wavefront analysis and spatially resolved second-order autocorrelation are demonstrated at incident angles up to 50° and pulse durations down to 6 fs.

Thermo-optic characteristics and switching power limit of slow-light photonic crystal structures on a silicon-on-insulator platform.

PubMed

Chahal, Manjit; Celler, George K; Jaluria, Yogesh; Jiang, Wei

2012-02-13

Employing a semi-analytic approach, we study the influence of key structural and optical parameters on the thermo-optic characteristics of photonic crystal waveguide (PCW) structures on a silicon-on-insulator (SOI) platform. The power consumption and spatial temperature profile of such structures are given as explicit functions of various structural, thermal and optical parameters, offering physical insight not available in finite-element simulations. Agreement with finite-element simulations and experiments is demonstrated. Thermal enhancement of the air-bridge structure is analyzed. The practical limit of thermo-optic switching power in slow light PCWs is discussed, and the scaling with key parameters is analyzed. Optical switching with sub-milliwatt power is shown viable.

Low voltage polymer network liquid crystal for infrared spatial light modulators.

PubMed

Peng, Fenglin; Xu, Daming; Chen, Haiwei; Wu, Shin-Tson

2015-02-09

We report a low-voltage and fast-response polymer network liquid crystal (PNLC) infrared phase modulator. To optimize device performance, we propose a physical model to understand the curing temperature effect on average domain size. Good agreement between model and experiment is obtained. By optimizing the UV curing temperature and employing a large dielectric anisotropy LC host, we have lowered the 2π phase change voltage to 22.8V at 1.55μm wavelength while keeping response time at about 1 ms. Widespread application of such a PNLC integrated into a high resolution liquid-crystal-on-silicon (LCoS) for infrared spatial light modulator is foreseeable.

A low voltage submillisecond-response polymer network liquid crystal spatial light modulator

NASA Astrophysics Data System (ADS)

Sun, Jie; Wu, Shin-Tson; Haseba, Yasuhiro

2014-01-01

We report a low voltage and highly transparent polymer network liquid crystal (PNLC) with submillisecond response time. By employing a large dielectric anisotropy LC host JC-BP07N, we have lowered the V2π voltage to 23 V at λ = 514 nm. This will enable PNLC to be integrated with a high resolution liquid-crystal-on-silicon spatial light modulator, in which the maximum voltage is 24 V. A simple model correlating PNLC performance with its host LC is proposed and validated experimentally. By optimizing the domain size, we can achieve V2π < 15 V with some compromises in scattering and response time.

Multi-spot porous silicon chip prepared from asymmetric electrochemical etching for human immunoglobin G sensor.

PubMed

Um, Sungyong; Cho, Bomin; Woo, Hee-Gweon; Sohn, Honglae

2011-08-01

Multi-spot porous silicon (MSPS)-based optical biosensor was developed to specify the biomolecules. MSPS chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon. MSPS prepared from anisotropic etching conditions displayed the Fabry-Pérot fringe patterns which varied spatially across the porous silicon (PS). Each spot displayed different reflection resonances and different pore characteristics as a function of the lateral distance from the Pt counter electrode. The sensor system consists of the 3 x 3 spot array of porous silicon modified with Protein A. The system was probed with various fragments of an aqueous Human Immunoglobin G (Ig G) analyte. The sensor operated by measurement of the reflection patterns in the white light reflection spectrum of MSPS. Molecular binding and specificity was detected as a shift in wavelength of these Fabry-Pérot fringe patterns.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Packaging of ferroelectric liquid crystal-on-silicon spatial light modulators

NASA Astrophysics Data System (ADS)

Lin, W.; Morozova, Nina D.; Ju, TehHua; Zhang, Weidong; Lee, Yung-Cheng; McKnight, Douglas J.; Johnson, Kristina M.

1996-11-01

A self-pulling soldering technology has been demonstrated for assembling liquid crystal on silicon (LCOS) spatial light modulators (SLMs). One of the major challenges in manufacturing the LCOS modules is to reproducibly control the thickness of the gap between the very large scale integrated circuit (VLSI) chip and the cover glass. The liquid crystal material is sandwiched between the VLSI chop and the cover glass which is coated with a transparent conductor. Solder joints with different profiles and sizes have been designed to provide surface tension forces to control the gap accommodating the ferroelectric liquid crystal layer in the range of a micron level with sub- micron uniformity. The optimum solder joint design is defined as a joint that results in the maximum pulling force. This technology provides an automatic, batch assembly process for a LCOS SLM through one reflow process. Fluxless soldering technology is used to assemble the module. This approach avoids residues from chemical of flux and oxides, and eliminates potential contamination to the device. Two different LCOS SLM designs and the process optimization are described.

Light trapping in thin-film solar cells with randomly rough and hybrid textures.

PubMed

Kowalczewski, Piotr; Liscidini, Marco; Andreani, Lucio Claudio

2013-09-09

We study light-trapping in thin-film silicon solar cells with rough interfaces. We consider solar cells made of different materials (c-Si and μc-Si) to investigate the role of size and nature (direct/indirect) of the energy band gap in light trapping. By means of rigorous calculations we demonstrate that the Lambertian Limit of absorption can be obtained in a structure with an optimized rough interface. We gain insight into the light trapping mechanisms by analysing the optical properties of rough interfaces in terms of Angular Intensity Distribution (AID) and haze. Finally, we show the benefits of merging ordered and disordered photonic structures for light trapping by studying a hybrid interface, which is a combination of a rough interface and a diffraction grating. This approach gives a significant absorption enhancement for a roughness with a modest size of spatial features, assuring good electrical properties of the interface. All the structures presented in this work are compatible with present-day technologies, giving recent progress in fabrication of thin monocrystalline silicon films and nanoimprint lithography.

Demonstration of Lasercom and Spatial Tracking with a Silicon Geiger-Mode APD Array

DTIC Science & Technology

2016-02-26

standardized pixel mask as described in the previous paragraph disabling 167 of the 1024 detectors in the array , this gives an absolute maximum rate...number of elements in an array based detector .5 In this paper, we present the results of photon-counting communication tests based on an arrayed ...semiconductor photon-counting detector .6 The array also has the ability to sense the spatial distribution of the received light giving it the potential to act

Applications of Photonic Crystals to Photovoltaic Devices

NASA Astrophysics Data System (ADS)

Foster, Stephen

Photonic crystals are structures that exhibit wavelength-scale spatial periodicity in their dielectric function. They are best known for their ability to exhibit complete photonic band gaps (PBGs) - spectral regions over which no light can propagate within the crystal. PBGs are specific instances of a more general phenomenon, in which the local photonic density of states can be enhanced or suppressed over different frequency ranges by tuning the properties of the crystal. This can be used to redirect, concentrate, or even trap light incident on the crystal. In this thesis, we investigate how photonic crystals can be used to enhance the efficiency of photovoltaic devices by trapping light. Due to the many different types of photovoltaic devices in existence (varying widely in materials used, modes of operation, and internal structure), there is no single light trapping architecture that can be applied to all photovoltaics. In this work we study a number of different devices: dye-sensitized solar cells, polymer solar cells, silicon-perovskite tandem cells, and single-junction silicon cells. We propose novel photonic crystal-based light trapping designs for each type of device, and evaluate these designs numerically to demonstrate their effectiveness. Full-field optical simulations of the cell are performed for each design, using either finite element method (FEM) or finite-difference time-domain (FDTD) techniques. Where appropriate, electrical modelling of the cell is also performed, through either the use of a simple one-diode model, or by obtaining full solutions to the semiconductor drift-diffusion equations within the cell. In all cases we find that the photonic crystal-based designs significantly outperform their non-nanostructured counterparts. In the case of dye-sensitized and polymer cells, enhancements in light absorption of 33% and 40% (respectively) are seen, relative to reference cells with planar geometries. In the case of silicon-perovskite tandem cells and silicon cells, projected power conversion efficiencies of over 30% are obtained, well beyond the current world record for silicon-based cells. We conclude the thesis with a discussion on the overall prospects for photonic crystal-based solar cells, with a focus on the factors that make solar cell technologies amenable to light trapping.

Diffusion lengths of silicon solar cells from luminescence images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wuerfel, P.; Trupke, T.; Puzzer, T.

A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced. The method, which is based on measuring the ratio of two luminescence images taken with two different spectral filters, is applicable, in principle, to both photoluminescence and electroluminescence measurements and is demonstrated experimentally by electroluminescence measurements on a multicrystalline silicon solar cell. Good agreement is observed with the diffusion length distribution obtained from a spectrally resolved light beam induced current map. In contrast to the determination of diffusion lengths from one single luminescence image, the method proposed heremore » gives absolute values of the diffusion length and, in comparison, it is much less sensitive to lateral voltage variations across the cell area as caused by local variations of the series resistance. It is also shown that measuring the ratio of two luminescence images allows distinguishing shunts or surface defects from bulk defects.« less

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Flicker in a twisted nematic spatial light modulator

NASA Astrophysics Data System (ADS)

Calderón-Hermosillo, Yuliana; García-Márquez, Jorge; Espinosa-Luna, Rafael; Ochoa, Noé Alcalá; López, Víctor; Aguilar, Alberto; Noé-Arias, Enrique; Alayli, Yasser

2013-06-01

Liquid Crystal on Silicon (LCoS) Spatial Light Modulators (SLM) are widely used for their capability to control beams howbeit fluctuations in phase and amplitude. It is then necessary to understand the negative effects of these fluctuations, also known as flicker, and the means to mitigate them. The flicker is observed either as high frequency variations of polarization, attenuation or high phase fluctuations on the wave front modulated by the LCoS device. Here, we compare the flicker behavior in a twisted nematic (TN) LCoS-SLM for different polarization schemes and temperatures. The quantitative evaluation shows that flicker is effectively reduced only by chilling the LCoS panel to temperatures just below 0 °C but, the LCoS modulation capability is also affected.

Long-distance thermal temporal ghost imaging over optical fibers

NASA Astrophysics Data System (ADS)

Yao, Xin; Zhang, Wei; Li, Hao; You, Lixing; Wang, Zhen; Huang, Yidong

2018-02-01

A thermal ghost imaging scheme between two distant parties is proposed and experimentally demonstrated over long-distance optical fibers. In the scheme, the weak thermal light is split into two paths. Photons in one path are spatially diffused according to their frequencies by a spatial dispersion component, then illuminate the object and record its spatial transmission information. Photons in the other path are temporally diffused by a temporal dispersion component. By the coincidence measurement between photons of two paths, the object can be imaged in a way of ghost imaging, based on the frequency correlation between photons in the two paths. In the experiment, the weak thermal light source is prepared by the spontaneous four-wave mixing in a silicon waveguide. The temporal dispersion is introduced by single mode fibers of 50 km, which also could be looked as a fiber link. Experimental results show that this scheme can be realized over long-distance optical fibers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplifiedmore » in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.« less

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

PubMed

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Correcting the Relative Bias of Light Obscuration and Flow Imaging Particle Counters.

PubMed

Ripple, Dean C; Hu, Zhishang

2016-03-01

Industry and regulatory bodies desire more accurate methods for counting and characterizing particles. Measurements of proteinaceous-particle concentrations by light obscuration and flow imaging can differ by factors of ten or more. We propose methods to correct the diameters reported by light obscuration and flow imaging instruments. For light obscuration, diameters were rescaled based on characterization of the refractive index of typical particles and a light scattering model for the extinction efficiency factor. The light obscuration models are applicable for either homogeneous materials (e.g., silicone oil) or for chemically homogeneous, but spatially non-uniform aggregates (e.g., protein aggregates). For flow imaging, the method relied on calibration of the instrument with silica beads suspended in water-glycerol mixtures. These methods were applied to a silicone-oil droplet suspension and four particle suspensions containing particles produced from heat stressed and agitated human serum albumin, agitated polyclonal immunoglobulin, and abraded ethylene tetrafluoroethylene polymer. All suspensions were measured by two flow imaging and one light obscuration apparatus. Prior to correction, results from the three instruments disagreed by a factor ranging from 3.1 to 48 in particle concentration over the size range from 2 to 20 μm. Bias corrections reduced the disagreement from an average factor of 14 down to an average factor of 1.5. The methods presented show promise in reducing the relative bias between light obscuration and flow imaging.

How to use a phase-only spatial light modulator as a color display.

PubMed

Harm, Walter; Jesacher, Alexander; Thalhammer, Gregor; Bernet, Stefan; Ritsch-Marte, Monika

2015-02-15

We demonstrate that a parallel aligned liquid crystal on silicon (PA-LCOS) spatial light modulator (SLM) without any attached color mask can be used as a full color display with white light illumination. The method is based on the wavelength dependence of the (voltage controlled) birefringence of the liquid crystal pixels. Modern SLMs offer a wide range over which the birefringence can be modulated, leading (in combination with a linear polarizer) to several intensity modulation periods of a reflected light wave as a function of the applied voltage. Because of dispersion, the oscillation period strongly depends on the wavelength. Thus each voltage applied to an SLM pixel corresponds to another reflected color spectrum. For SLMs with a sufficiently broad tuning range, one obtains a color palette (i.e., a "color lookup-table"), which allows one to display color images. An advantage over standard liquid crystal displays (LCDs), which use color masks in front of the individual pixels, is that the light efficiency and the display resolution are increased by a factor of three.

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

NASA Astrophysics Data System (ADS)

Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

2016-11-01

In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

Light propagation with phase discontinuities: generalized laws of reflection and refraction.

PubMed

Yu, Nanfang; Genevet, Patrice; Kats, Mikhail A; Aieta, Francesco; Tetienne, Jean-Philippe; Capasso, Federico; Gaburro, Zeno

2011-10-21

Conventional optical components rely on gradual phase shifts accumulated during light propagation to shape light beams. New degrees of freedom are attained by introducing abrupt phase changes over the scale of the wavelength. A two-dimensional array of optical resonators with spatially varying phase response and subwavelength separation can imprint such phase discontinuities on propagating light as it traverses the interface between two media. Anomalous reflection and refraction phenomena are observed in this regime in optically thin arrays of metallic antennas on silicon with a linear phase variation along the interface, which are in excellent agreement with generalized laws derived from Fermat's principle. Phase discontinuities provide great flexibility in the design of light beams, as illustrated by the generation of optical vortices through use of planar designer metallic interfaces.

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination

NASA Astrophysics Data System (ADS)

Kim, Ka-Hyun; Johnson, Erik V.; Cabarrocas, Pere Roca i.

2016-07-01

Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and self-healing after degradation during light-soaking. The precise dynamics of the light-induced degradation was studied in a series of light-soaking experiments under various illumination conditions such as AM1.5G and filtered 570 nm yellow light. Hydrogen effusion experiment before and after light-soaking further revealed that the initial degradation of pm-Si:H solar cells originate from the modification of silicon-hydrogen bonding on the surface of silicon nanocrystals in pm-Si:H.

Foveal light exposure is increased at the time of removal of silicone oil with the potential for phototoxicity.

PubMed

Dogramaci, Mahmut; Williams, Katie; Lee, Ed; Williamson, Tom H

2013-01-01

There is sudden and dramatic visual function deterioration in 1-10 % of eyes filled with silicone oil at the time of removal of silicon oil. Transmission of high-energy blue light is increased in eyes filled with silicone oil. We sought to identify if increased foveal light exposure is a potential factor in the pathophysiology of the visual loss at the time of removal of silicone oil. A graphic ray tracing computer program and laboratory models were used to determine the effect of the intraocular silicone oil bubble size on the foveal illuminance at the time of removal of silicone oil under direct microscope light. The graphic ray tracing computer program revealed a range of optical vignetting effects created by different sizes of silicone oil bubble within the vitreous cavity giving rise to an uneven macular illumination. The laboratory model was used to quantify the variation of illuminance at the foveal region with different sizes of silicone oil bubble with in the vitreous cavity at the time of removal of silicon oil under direct microscope light. To substantiate the hypothesis of the light toxicity during removal of silicone oil, The outcome of oil removal procedures performed under direct microscope illumination in compared to those performed under blocked illumination. The computer program showed that the optical vignetting effect at the macula was dependent on the size of the intraocular silicone oil bubble. The laboratory eye model showed that the foveal illuminance followed a bell-shaped curve with 70 % greater illuminance demonstrated at with 50-60 % silicone oil fill. The clinical data identified five eyes with unexplained vision loss out of 114 eyes that had the procedure performed under direct microscope illumination compared to none out of 78 eyes that had the procedure under blocked illumination. Foveal light exposure, and therefore the potential for phototoxicity, is transiently increased at the time of removal of silicone oil. This is due to uneven macular illumination resulting from the optical vignetting effect of different silicone oil bubble sizes. The increase in foveal light exposure may be significant when the procedure is performed under bright operating microscope light on already stressed photoreceptors of an eye filled with silicon oil. We advocate the use of precautions, such as central shadow filter on the operating microscope light source to reduce foveal light exposure and the risk of phototoxicity at the time of removal of silicone oil. The graphic ray tracing computer program used in this study shows promise in eye modeling for future studies.

A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells.

PubMed

Li, Yingfeng; Li, Meicheng; Fu, Pengfei; Li, Ruike; Song, Dandan; Shen, Chao; Zhao, Yan

2015-06-26

Silicon nanorod based radial-junction solar cells are competitive alternatives to traditional planar silicon solar cells. In various silicon nanorods, nanocone is always considered to be better than nanowire in light-absorption. Nevertheless, we find that this notion isn't absolutely correct. Silicon nanocone is indeed significantly superior over nanowire in light-concentration due to its continuous diameters, and thus resonant wavelengths excited. However, the concentrated light can't be effectively absorbed and converted to photogenerated carriers, since its propagation path in silicon nanocone is shorter than that in nanowire. The results provide critical clues for the design of silicon nanorod based radial-junction solar cells.

Numerical Solution of Light Scattered from and Transmitted through a Rough Dielectric Surface with Applications to Periodic Roughness and Isolated Structures

NASA Technical Reports Server (NTRS)

Sun, Wenbo; Videnn, Gorden; Lin, Bing; Hu, Yongxiang

2007-01-01

Light scattering and transmission by rough surfaces are of considerable interest in a variety of applications including remote sensing and characterization of surfaces. In this work, the finite-difference time domain technique is applied to calculate the scattered and transmitted electromagnetic fields of an infinite periodic rough surface. The elements of Mueller matrix for scattered light are calculated by an integral of the near fields over a significant number of periods of the surface. The normalized Mueller matrix elements of the scattered light and the spatial distribution of the transmitted flux for a monolayer of micron-sized dielectric spheres on a silicon substrate are presented. The numerical results show that the nonzero Mueller matrix elements of the system of the monolayer of dielectric spheres on a silicon substrate have specific maxima at some scattering angles. These maxima may be used in characterization of the feature of the system. For light transmitted through the monolayer of spheres, our results show that the transmitted energy focuses around the ray passing through centers of the spheres. At other locations, the transmitted flux is very small. The technique also may be used to calculate the perturbance of the electromagnetic field due to the presence of an isolated structure on the substrate.

Visible light laser voltage probing on thinned substrates

DOEpatents

Beutler, Joshua; Clement, John Joseph; Miller, Mary A.; Stevens, Jeffrey; Cole, Jr., Edward I.

2017-03-21

The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.

OSA Trends in Optics and Photonics Series, Volume 14 Spatial Light Modulators

DTIC Science & Technology

1998-05-26

Extreme Ultraviolet Lithography Glenn D. Kubiak andDon R. Kania, eds. Vol. 5 Optical Amplifiers and Their Applications (1996) Edited by...micromirror device ( DMD ), and photorefractive crystal. Note that other devices not discussed in this article have been developed, such as the charge...earlier. DMDs are fabricated by micromachining a silicon wafer.7 Tiny (16 um X 16 um) suspended mirrors are micromachined on cantilevers. The

Real-time emulation of neural images in the outer retinal circuit.

PubMed

Hasegawa, Jun; Yagi, Tetsuya

2008-12-01

We describe a novel real-time system that emulates the architecture and functionality of the vertebrate retina. This system reconstructs the neural images formed by the retinal neurons in real time by using a combination of analog and digital systems consisting of a neuromorphic silicon retina chip, a field-programmable gate array, and a digital computer. While the silicon retina carries out the spatial filtering of input images instantaneously, using the embedded resistive networks that emulate the receptive field structure of the outer retinal neurons, the digital computer carries out the temporal filtering of the spatially filtered images to emulate the dynamical properties of the outer retinal circuits. The emulations of the neural image, including 128 x 128 bipolar cells, are carried out at a frame rate of 62.5 Hz. The emulation of the response to the Hermann grid and a spot of light and an annulus of lights has demonstrated that the system responds as expected by previous physiological and psychophysical observations. Furthermore, the emulated dynamics of neural images in response to natural scenes revealed the complex nature of retinal neuron activity. We have concluded that the system reflects the spatiotemporal responses of bipolar cells in the vertebrate retina. The proposed emulation system is expected to aid in understanding the visual computation in the retina and the brain.

Matched-filtering generalized phase contrast using LCoS pico-projectors for beam-forming.

PubMed

Bañas, Andrew; Palima, Darwin; Glückstad, Jesper

2012-04-23

We report on a new beam-forming system for generating high intensity programmable optical spikes using so-called matched-filtering Generalized Phase Contrast (mGPC) applying two consumer handheld pico-projectors. Such a system presents a low-cost alternative for optical trapping and manipulation, optical lattices and other beam-shaping applications usually implemented with high-end spatial light modulators. Portable pico-projectors based on liquid crystal on silicon (LCoS) devices are used as binary phase-only spatial light modulators by carefully setting the appropriate polarization of the laser illumination. The devices are subsequently placed into the object and Fourier plane of a standard 4f-setup according to the mGPC spatial filtering configuration. Having a reconfigurable spatial phase filter, instead of a fixed and fabricated one, allows the beam shaper to adapt to different input phase patterns suited for different requirements. Despite imperfections in these consumer pico-projectors, the mGPC approach tolerates phase aberrations that would have otherwise been hard to overcome by standard phase projection. © 2012 Optical Society of America

Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

NASA Astrophysics Data System (ADS)

de Jong, M. M.

2013-01-01

In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the nanocrystalline silicon (nc-Si) regime. In the nc-Si regime, the crystalline fraction can be further controlled by changing the power input into the plasma. With these layers, a-Si thin film solar cells were fabricated, on glass and PC substrates. The adverse effect of the low temperature growth on the photoactive material is further mitigated by using thinner silicon layers, which can deliver a good current only with an adequate light trapping technique. We have simulated and experimentally tested three light trapping techniques, using embossed structures in PC substrates and random structures on glass: regular pyramid structures larger than the wavelength of light (micropyramids), regular pyramid structures comparable to the wavelength of light (nanopyramids) and random nano-textures (Asahi U-type). The use of nanostructured polycarbonate substrates results in initial conversion efficiencies of 7.4%, compared to 7.6% for cells deposited under identical conditions on Asahi U-type glass. The potential of manufacturing thin film solar cells at processing temperatures lower than 130oC is further illustrated by obtained results on texture-etched aluminium doped zinc-oxide (ZnO:Al) on glass: we achieved 6.9% for nc-Si cells using a very thin absorber layer of only 750 nm, and by combining a-Si and nc-Si cells in tandem solar cells we reached an initial conversion efficiency of 9.5%.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Photonics and microarray technology

NASA Astrophysics Data System (ADS)

Skovsen, E.; Duroux, M.; Neves-Petersen, M. T.; Duroux, L.; Petersen, S. B.

2007-05-01

Photonic induced immobilization of biosensor molecules is a novel technology that results in spatially oriented and spatially localized covalent coupling of a large variety of biomolecules onto thiol reactive surfaces, e.g. thiolated glass, quartz, gold or silicon. The reaction mechanism behind the reported new technology involves light-induced breakage of disulphide bridges in proteins upon UV illumination of nearby aromatic amino acids resulting in the formation of reactive molecules that will form covalent bonds with thiol reactive surfaces. This new technology has the potential of replacing present micro dispensing arraying technologies, where the size of the individual sensor spots are limited by the size of the dispensed droplets. Using light-induced immobilization the spatial resolution is defined by the area of the sensor surface that is illuminated by UV light and not by the physical size of the dispensed droplets of sensor molecules. This new technology allows for dense packing of different biomolecules on a surface, allowing the creation of multi-potent functionalized materials, such as biosensors with micrometer sized individual sensor spots. Thus, we have developed the necessary technology for preparing large protein arrays of enzymes and fragments of antibodies, with micrometer resolution, without the need for liquid micro dispensing.

Effective light absorption and its enhancement factor for silicon nanowire-based solar cell.

PubMed

Duan, Zhiqiang; Li, Meicheng; Mwenya, Trevor; Fu, Pengfei; Li, Yingfeng; Song, Dandan

2016-01-01

Although nanowire (NW) antireflection coating can enhance light trapping capability, which is generally used in crystal silicon (CS) based solar cells, whether it can improve light absorption in the CS body depends on the NW geometrical shape and their geometrical parameters. In order to conveniently compare with the bare silicon, two enhancement factors E(T) and E(A) are defined and introduced to quantitatively evaluate the efficient light trapping capability of NW antireflective layer and the effective light absorption capability of CS body. Five different shapes (cylindrical, truncated conical, convex conical, conical, and concave conical) of silicon NW arrays arranged in a square are studied, and the theoretical results indicate that excellent light trapping does not mean more light can be absorbed in the CS body. The convex conical NW has the best light trapping, but the concave conical NW has the best effective light absorption. Furthermore, if the cross section of silicon NW is changed into a square, both light trapping and effective light absorption are enhanced, and the Eiffel Tower shaped NW arrays have optimal effective light absorption.

Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

PubMed

Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

2014-10-20

Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

Photon energy lifter.

PubMed

Gaburro, Zeno; Ghulinyan, Mher; Riboli, Francesco; Pavesi, Lorenzo; Recati, Alessio; Carusotto, Iacopo

2006-08-07

We propose a time-dependent, spatially periodic photonic structure which is able to shift the carrier frequency of an optical pulse which propagates through it. Taking advantage of the slow group velocity of light in periodic photonic structures, the wavelength conversion process can be performed with an efficiency close to 1 and without affecting the shape and the coherence of the pulse. Quantitative Finite Difference Time Domain simulations are performed for realistic systems with optical parameters of conventional silicon technology.

Silicon coupled with plasmon nanocavities generates bright visible hot luminescence

NASA Astrophysics Data System (ADS)

Cho, Chang-Hee; Aspetti, Carlos O.; Park, Joohee; Agarwal, Ritesh

2013-04-01

To address the limitations in device speed and performance in silicon-based electronics, there have been extensive studies on silicon optoelectronics with a view to achieving ultrafast optical data processing. The biggest challenge has been to develop an efficient silicon-based light source, because the indirect bandgap of silicon gives rise to extremely low emission efficiencies. Although light emission in quantum-confined silicon at sub-10 nm length scales has been demonstrated, there are difficulties in integrating quantum structures with conventional electronics. It is desirable to develop new concepts to obtain emission from silicon at length scales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in `bulk-sized' silicon coupled with plasmon nanocavities at room temperature, from non-thermalized carrier recombination. The highly enhanced emission (internal quantum efficiency of >1%) in plasmonic silicon, together with its size compatibility with current silicon electronics, provides new avenues for developing monolithically integrated light sources on conventional microchips.

Planar metasurface retroreflector

NASA Astrophysics Data System (ADS)

Arbabi, Amir; Arbabi, Ehsan; Horie, Yu; Kamali, Seyedeh Mahsa; Faraon, Andrei

2017-07-01

Metasurfaces are two-dimensional arrangements of subwavelength scatterers that control the propagation of optical waves. Here, we show that cascaded metasurfaces, each performing a predefined mathematical transformation, provide a new optical design framework that enables new functionalities not yet demonstrated with single metasurfaces. Specifically, we demonstrate that retroreflection can be achieved with two vertically stacked planar metasurfaces, the first performing a spatial Fourier transform and its inverse, and the second imparting a spatially varying momentum to the Fourier transform of the incident light. Using this concept, we fabricate and test a planar monolithic near-infrared retroreflector composed of two layers of silicon nanoposts, which reflects light along its incident direction with a normal incidence efficiency of 78% and a large half-power field of view of 60°. The metasurface retroreflector demonstrates the potential of cascaded metasurfaces for implementing novel high-performance components, and enables low-power and low-weight passive optical transmitters.

Graphene-based active slow surface plasmon polaritons

PubMed Central

Lu, Hua; Zeng, Chao; Zhang, Qiming; Liu, Xueming; Hossain, Md Muntasir; Reineck, Philipp; Gu, Min

2015-01-01

Finding new ways to control and slow down the group velocity of light in media remains a major challenge in the field of optics. For the design of plasmonic slow light structures, graphene represents an attractive alternative to metals due to its strong field confinement, comparably low ohmic loss and versatile tunability. Here we propose a novel nanostructure consisting of a monolayer graphene on a silicon based graded grating structure. An external gate voltage is applied to graphene and silicon, which are separated by a spacer layer of silica. Theoretical and numerical results demonstrate that the structure exhibits an ultra-high slowdown factor above 450 for the propagation of surface plasmon polaritons (SPPs) excited in graphene, which also enables the spatially resolved trapping of light. Slowdown and trapping occur in the mid-infrared wavelength region within a bandwidth of ~2.1 μm and on a length scale less than 1/6 of the operating wavelength. The slowdown factor can be precisely tuned simply by adjusting the external gate voltage, offering a dynamic pathway for the release of trapped SPPs at room temperature. The presented results will enable the development of highly tunable optoelectronic devices such as plasmonic switches and buffers. PMID:25676462

A theoretical study on the optical properties of black silicon

NASA Astrophysics Data System (ADS)

Ma, Shijun; Liu, Shuang; Xu, Qinwei; Xu, Junwen; Lu, Rongguo; Liu, Yong; Zhong, Zhiyong

2018-03-01

There is a wide application prospect in black silicon, especially in solar cells and photoelectric detectors. For further optimization of black silicon, it is important to study its optical properties. Especially, the influence of the surface nanostructures on these properties and the light propagation within the nanostructures are relevant. In this paper, two kinds of black silicon models are studied via the finite differences time domain method. The simulated reflectance spectra matches well with the measured curve. Also, the light intensity distribution within the nanostructures shows that near 80% of the incident light are redirected and subjected to internal reflection, which provides powerful support for the good light trapping properties of black silicon.

Demonstration of the CDMA-mode CAOS smart camera.

PubMed

Riza, Nabeel A; Mazhar, Mohsin A

2017-12-11

Demonstrated is the code division multiple access (CDMA)-mode coded access optical sensor (CAOS) smart camera suited for bright target scenarios. Deploying a silicon CMOS sensor and a silicon point detector within a digital micro-mirror device (DMD)-based spatially isolating hybrid camera design, this smart imager first engages the DMD starring mode with a controlled factor of 200 high optical attenuation of the scene irradiance to provide a classic unsaturated CMOS sensor-based image for target intelligence gathering. Next, this CMOS sensor provided image data is used to acquire a focused zone more robust un-attenuated true target image using the time-modulated CDMA-mode of the CAOS camera. Using four different bright light test target scenes, successfully demonstrated is a proof-of-concept visible band CAOS smart camera operating in the CDMA-mode using up-to 4096 bits length Walsh design CAOS pixel codes with a maximum 10 KHz code bit rate giving a 0.4096 seconds CAOS frame acquisition time. A 16-bit analog-to-digital converter (ADC) with time domain correlation digital signal processing (DSP) generates the CDMA-mode images with a 3600 CAOS pixel count and a best spatial resolution of one micro-mirror square pixel size of 13.68 μm side. The CDMA-mode of the CAOS smart camera is suited for applications where robust high dynamic range (DR) imaging is needed for un-attenuated un-spoiled bright light spectrally diverse targets.

Liquid argon scintillation detection utilizing wavelength-shifting plates and light guides

NASA Astrophysics Data System (ADS)

Howard, B.

2018-02-01

In DUNE, the event timing provided by the detection of the relatively prompt scintillation photons will improve spatial resolution in the drift direction of the time-projection chamber (TPC) and is especially useful for non-beam physics topics such as supernova neutrinos and nucleon decay. The baseline design for the first 10kt single phase TPC fits the photon detector system in the natural gap between the wire planes of adjacent TPC volumes. A prototype photon detector design utilizes wavelength-shifter coated plates to convert the vacuum ultraviolet scintillation light to the optical and commercially-produced wavelength-shifting light guides to trap some of this light and transport it to an array of silicon photomultipliers at the end. This system and the testing performed to characterize the system and determine the efficiency are discussed.

Adaptive optics high-resolution IR spectroscopy with silicon grisms and immersion gratings

NASA Astrophysics Data System (ADS)

Ge, Jian; McDavitt, Daniel L.; Chakraborty, Abhijit; Bernecker, John L.; Miller, Shane

2003-02-01

The breakthrough of silicon immersion grating technology at Penn State has the ability to revolutionize high-resolution infrared spectroscopy when it is coupled with adaptive optics at large ground-based telescopes. Fabrication of high quality silicon grism and immersion gratings up to 2 inches in dimension, less than 1% integrated scattered light, and diffraction-limited performance becomes a routine process thanks to newly developed techniques. Silicon immersion gratings with etched dimensions of ~ 4 inches are being developed at Penn State. These immersion gratings will be able to provide a diffraction-limited spectral resolution of R = 300,000 at 2.2 micron, or 130,000 at 4.6 micron. Prototype silicon grisms have been successfully used in initial scientific observations at the Lick 3m telescope with adaptive optics. Complete K band spectra of a total of 6 T Tauri and Ae/Be stars and their close companions at a spectral resolution of R ~ 3000 were obtained. This resolving power was achieved by using a silicon echelle grism with a 5 mm pupil diameter in an IR camera. These results represent the first scientific observations conducted by the high-resolution silicon grisms, and demonstrate the extremely high dispersing power of silicon-based gratings. New discoveries from this high spatial and spectral resolution IR spectroscopy will be reported. The future of silicon-based grating applications in ground-based AO IR instruments is promising. Silicon immersion gratings will make very high-resolution spectroscopy (R > 100,000) feasible with compact instruments for implementation on large telescopes. Silicon grisms will offer an efficient way to implement low-cost medium to high resolution IR spectroscopy (R ~ 1000-50000) through the conversion of existing cameras into spectrometers by locating a grism in the instrument's pupil location.

An all-silicon optical PC-to-PC link utilizing USB

NASA Astrophysics Data System (ADS)

Goosen, Marius E.; Alberts, Antonie C.; Venter, Petrus J.; du Plessis, Monuko; Rademeyer, Pieter

2013-02-01

An integrated silicon light source still remains the Holy Grail for integrated optical communication systems. Hot carrier luminescent light sources provide a way to create light in a standard CMOS process, potentially enabling cost effective optical communication between CMOS integrated circuits. In this paper we present a 1 Mb/s integrated silicon optical link for information transfer, targeting a real-world integrated solution by connecting two PCs via a USB port while transferring data optically between the devices. This realization represents the first optical communication product prototype utilizing a CMOS light emitter. The silicon light sources which are implemented in a standard 0.35 μm CMOS technology are electrically modulated and detected using a commercial silicon avalanche photodiode. Data rates exceeding 10 Mb/s using silicon light sources have previously been demonstrated using raw bit streams. In this work data is sent in two half duplex streams accompanied with the separate transmission of a clock. Such an optical communication system could find application in high noise environments where data fidelity, range and cost are a determining factor.

Optimization of ferroelectric liquid crystal optically addressed spatial light modulator performance

NASA Astrophysics Data System (ADS)

Perennes, Frederic; Crossland, William A.

1997-08-01

The switching mechanisms of ferroelectric liquid crystal optically addressed spatial light modulators (OASLMs) using a photosensitive structure made of an intrinsic amorphous silicon layer sandwiched in between an indium tin oxide coated glass sheet and a reflective metal layer are reviewed. Devices based on photoconductor and photodiode layers are briefly reviewed and attention is focused on pixelated metal mirror devices, which offer fast switching and good optical characteristics with the same sensitivity range as the photodiode OASLMs. They are particularly suitable for high frame rate SLMs with intense read beams. Optimum drive conditions for this type of device are considered. An equivalent electrical circuit is proposed for the photosensitive structure and the voltage drop across the liquid crystal layer is investigated and related to the optical response of the device. Experimental work is carried out to demonstrate the validity of our equivalent circuit. We show that the synchronization of a light source with the case pulse enables the OASLM to work at frame rates of a few kilohertz. We also demonstrate that the exact synchronization of the write light source with the write pulse enhances the potential memory of the device.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inglese, Alessandro, E-mail: alessandro.inglese@aalto.fi; Savin, Hele; Lindroos, Jeanette

Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in lowmore » resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.« less

High-performance axicon lenses based on high-contrast, multilayer gratings

NASA Astrophysics Data System (ADS)

Doshay, Sage; Sell, David; Yang, Jianji; Yang, Rui; Fan, Jonathan A.

2018-01-01

Axicon lenses are versatile optical elements that can convert Gaussian beams to Bessel-like beams. In this letter, we demonstrate that axicons operating with high efficiencies and at large angles can be produced using high-contrast, multilayer gratings made from silicon. Efficient beam deflection of incident monochromatic light is enabled by higher-order optical modes in the silicon structure. Compared to diffractive devices made from low-contrast materials such as silicon dioxide, our multilayer devices have a relatively low spatial profile, reducing shadowing effects and enabling high efficiencies at large deflection angles. In addition, the feature sizes of these structures are relatively large, making the fabrication of near-infrared devices accessible with conventional optical lithography. Experimental lenses with deflection angles as large as 40° display field profiles that agree well with theory. Our concept can be used to design optical elements that produce higher-order Bessel-like beams, and the combination of high-contrast materials with multilayer architectures will more generally enable new classes of diffractive photonic structures.

Scintillating fibres coupled to silicon photomultiplier prototypes for fast beam monitoring and thin timing detectors

NASA Astrophysics Data System (ADS)

Papa, A.; Kettle, P.-R.; Ripiccini, E.; Rutar, G.

2016-07-01

Several scintillating fibre prototypes (single- and double-layers) made of 250 μm multi-clad square fibres coupled to silicon photomultiplier have been studied using electrons, positrons and muons at different energies. Current measurements show promising results: already for a single fibre layer and minimum ionizing particles we obtain a detection efficiency ≥ 95 % (mean collected light/fibre ≈ 8 phe), a timing resolution of 550 ps/fibre and a foreseen spatial resolution < 100 μm, based on the achieved negligible optical cross-talk between fibres (< 1 %). We will also discuss the performances of a double-layer staggered prototype configuration, for which a full detection efficiency (≥ 99 %) has been measured together with a timing resolution of ≈ 400 ps for double hit events.

Holographically generated structured illumination for cell stimulation in optogenetics

NASA Astrophysics Data System (ADS)

Schmieder, Felix; Büttner, Lars; Czarske, Jürgen; Torres, Maria Leilani; Heisterkamp, Alexander; Klapper, Simon; Busskamp, Volker

2017-06-01

In Optogenetics, cells, e.g. neurons or cardiac cells, are genetically altered to produce for example the lightsensitive protein Channelrhodopsin-2. Illuminating these cells induces action potentials or contractions and therefore allows to control electrical activity. Thus, light-induced cell stimulation can be used to gain insight to various biological processes. Many optogenetics studies, however, use only full field illumination and thus gain no local information about their specimen. But using modern spatial light modulators (SLM) in conjunction with computer-generated holograms (CGH), cells may be stimulated locally, thus enabling the research of the foundations of cell networks and cell communications. In our contribution, we present a digital holographic system for the patterned, spatially resolved stimulation of cell networks. We employ a fast ferroelectric liquid crystal on silicon SLM to display CGH at up to 1.7 kHz. With an effective working distance of 33 mm, we achieve a focus of 10 μm at a positioning accuracy of the individual foci of about 8 μm. We utilized our setup for the optogenetic stimulation of clusters of cardiac cells derived from induced pluripotent stem cells and were able to observe contractions correlated to both temporal frequency and spatial power distribution of the light incident on the cell clusters.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Post passivation light trapping back contacts for silicon heterojunction solar cells.

PubMed

Smeets, M; Bittkau, K; Lentz, F; Richter, A; Ding, K; Carius, R; Rau, U; Paetzold, U W

2016-11-10

Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient light-trapping back contacts, subsequent to the passivation of Si heterojunction solar cells. The back contacts are realized by texturing an amorphous silicon layer with a refractive index close to the one of crystalline silicon at the back side of the silicon wafer. As a result, decoupling of optically active and electrically active layers is introduced. In the long run, the presented concept has the potential to improve light trapping in monolithic Si multijunction solar cells as well as solar cell configurations where texturing of the Si absorber surfaces usually results in a deterioration of the electrical properties. As part of this study, different light-trapping textures were applied to prototype silicon heterojunction solar cells. The best path length enhancement factors, at high passivation quality, were obtained with light-trapping textures based on randomly distributed craters. Comparing a planar reference solar cell with an absorber thickness of 280 μm and additional anti-reflection coating, the short-circuit current density (J SC ) improves for a similar solar cell with light-trapping back contact. Due to the light trapping back contact, the J SC is enhanced around 1.8 mA cm -2 to 38.5 mA cm -2 due to light trapping in the wavelength range between 1000 nm and 1150 nm.

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Programmable diffractive lens for ophthalmic application

NASA Astrophysics Data System (ADS)

Millán, María S.; Pérez-Cabré, Elisabet; Romero, Lenny A.; Ramírez, Natalia

2014-06-01

Pixelated liquid crystal displays have been widely used as spatial light modulators to implement programmable diffractive optical elements, particularly diffractive lenses. Many different applications of such components have been developed in information optics and optical processors that take advantage of their properties of great flexibility, easy and fast refreshment, and multiplexing capability in comparison with equivalent conventional refractive lenses. We explore the application of programmable diffractive lenses displayed on the pixelated screen of a liquid crystal on silicon spatial light modulator to ophthalmic optics. In particular, we consider the use of programmable diffractive lenses for the visual compensation of refractive errors (myopia, hypermetropia, astigmatism) and presbyopia. The principles of compensation are described and sketched using geometrical optics and paraxial ray tracing. For the proof of concept, a series of experiments with artificial eye in optical bench are conducted. We analyze the compensation precision in terms of optical power and compare the results with those obtained by means of conventional ophthalmic lenses. Practical considerations oriented to feasible applications are provided.

Ophthalmic compensation of visual ametropia based on a programmable diffractive lens

NASA Astrophysics Data System (ADS)

Millán, Maria S.; Pérez-Cabré, Elisabet; Romero, Lenny A.; Ramírez, Natalia

2013-11-01

Pixelated liquid crystal displays have been widely used as spatial light modulators to implement programmable diffractive optical elements (DOEs), particularly diffractive lenses. Many different applications of such components have been developed in information optics and optical processors that take advantage of their properties of great flexibility, easy and fast refreshment, and multiplexing capability in comparison with equivalent conventional refractive lenses. In this paper, we explore the application of programmable diffractive lenses displayed on the pixelated screen of a liquid crystal on silicon spatial light modulator (LCoS-SLM) to ophthalmic optics. In particular, we consider the use of programmable diffractive lenses for the visual compensation of some refractive errors (myopia, hyperopia). The theoretical principles of compensation are described and sketched using geometrical optics and paraxial ray tracing. A series of experiments with artificial eye in optical bench are conducted to analyze the compensation accuracy in terms of optical power and to compare the results with those obtained by means of conventional ophthalmic lenses. Practical considerations oriented to feasible applications are provided.

Liquid Argon Scintillation Detection Utilizing Wavelength-Shifting Plates and Light Guides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, B.

In DUNE, the event timing provided by the detection of the relatively prompt scintillation photons will improve spatial resolution in the drift direction of the time-projection chamber (TPC) and is especially useful for non-beam physics topics such as supernova neutrinos and nucleon decay. The baseline design for the first 10kt single phase TPC fits the photon detector system in the natural gap between the wire planes of adjacent TPC volumes. A prototype photon detector design utilizes wavelength-shifter coated plates to convert the vacuum ultraviolet scintillation light to the optical and commercially-produced wavelength-shifting light guides to trap some of this lightmore » and transport it to an array of silicon photomultipliers at the end. This system and the testing performed to characterize the system and determine the efficiency are discussed.« less

Neural Network for Image-to-Image Control of Optical Tweezers

NASA Technical Reports Server (NTRS)

Decker, Arthur J.; Anderson, Robert C.; Weiland, Kenneth E.; Wrbanek, Susan Y.

2004-01-01

A method is discussed for using neural networks to control optical tweezers. Neural-net outputs are combined with scaling and tiling to generate 480 by 480-pixel control patterns for a spatial light modulator (SLM). The SLM can be combined in various ways with a microscope to create movable tweezers traps with controllable profiles. The neural nets are intended to respond to scattered light from carbon and silicon carbide nanotube sensors. The nanotube sensors are to be held by the traps for manipulation and calibration. Scaling and tiling allow the 100 by 100-pixel maximum resolution of the neural-net software to be applied in stages to exploit the full 480 by 480-pixel resolution of the SLM. One of these stages is intended to create sensitive null detectors for detecting variations in the scattered light from the nanotube sensors.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

The spatial resolution of silicon-based electron detectors in beta-autoradiography.

PubMed

Cabello, Jorge; Wells, Kevin

2010-03-21

Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Extremely simple holographic projection of color images

NASA Astrophysics Data System (ADS)

Makowski, Michal; Ducin, Izabela; Kakarenko, Karol; Suszek, Jaroslaw; Kolodziejczyk, Andrzej; Sypek, Maciej

2012-03-01

A very simple scheme of holographic projection is presented with some experimental results showing good quality image projection without any imaging lens. This technique can be regarded as an alternative to classic projection methods. It is based on the reconstruction real images from three phase iterated Fourier holograms. The illumination is performed with three laser beams of primary colors. A divergent wavefront geometry is used to achieve an increased throw angle of the projection, compared to plane wave illumination. Light fibers are used as light guidance in order to keep the setup as simple as possible and to provide point-like sources of high quality divergent wave-fronts at optimized position against the light modulator. Absorbing spectral filters are implemented to multiplex three holograms on a single phase-only spatial light modulator. Hence color mixing occurs without any time-division methods, which cause rainbow effects and color flicker. The zero diffractive order with divergent illumination is practically invisible and speckle field is effectively suppressed with phase optimization and time averaging techniques. The main advantages of the proposed concept are: a very simple and highly miniaturizable configuration; lack of lens; a single LCoS (Liquid Crystal on Silicon) modulator; a strong resistance to imperfections and obstructions of the spatial light modulator like dead pixels, dust, mud, fingerprints etc.; simple calculations based on Fast Fourier Transform (FFT) easily processed in real time mode with GPU (Graphic Programming).

Application of LC and LCoS in Multispectral Polarized Scene Projector (MPSP)

NASA Astrophysics Data System (ADS)

Yu, Haiping; Guo, Lei; Wang, Shenggang; Lippert, Jack; Li, Le

2017-02-01

A Multispectral Polarized Scene Projector (MPSP) had been developed in the short-wave infrared (SWIR) regime for the test & evaluation (T&E) of spectro-polarimetric imaging sensors. This MPSP generates multispectral and hyperspectral video images (up to 200 Hz) with 512×512 spatial resolution with active spatial, spectral, and polarization modulation with controlled bandwidth. It projects input SWIR radiant intensity scenes from stored memory with user selectable wavelength and bandwidth, as well as polarization states (six different states) controllable on a pixel level. The spectral contents are implemented by a tunable filter with variable bandpass built based on liquid crystal (LC) material, together with one passive visible and one passive SWIR cholesteric liquid crystal (CLC) notch filters, and one switchable CLC notch filter. The core of the MPSP hardware is the liquid-crystal-on-silicon (LCoS) spatial light modulators (SLMs) for intensity control and polarization modulation.

Goos-Hänchen effect on Si thin films with spherical and cylindrical pores

NASA Astrophysics Data System (ADS)

Olaya, Cherrie May; Garcia, Wilson O.; Hermosa, Nathaniel

2018-02-01

We examine the effects on the spatial and angular Goos-Hanchen (GH) beam shifts of spherical and cylindrical pores in a thin film. In our calculations, a p-polarized light is incident on a 1-μm thick porous silicon (Si) thin film on a Si substrate. The beam shifts are within the measurement range of usual optical detectors. Our results show that a technique based on GH shift can be used to determine the porosity and pore structure of thin films at a given thickness.

Optical silicones for use in harsh operating environments

NASA Astrophysics Data System (ADS)

Riegler, Bill; Bruner, Stephen J.; Elgin, Randall

2004-12-01

The optics industry widely uses silcones for various fiber optic cable potting applications and light emitting diode protection. Optics manufacturers know traditional silicone elastomers, gels, thixotropic gels, and fluids not only perform extremely well in high temperature applications, but also offer refractive index matching so that silicones can transmit light with admirable efficiency. However, because environmental conditions may affect a material's performance over time, one must also consider the conditions the device operates in to ensure long-term reliability. External environments may include exposure to a combination of UV light and temperature, while other environments may expose devices to hydrocarbon based fuels. This paper will delve into the chemistry of silicones and functional groups that lend themselves to properties such as temperature, fuel, and radiation resistance to show shy silicone is the material of choice for optic applications under normally harmful forms of exposure. Data will be presented to examine silicone's performance in these environment.

Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale.

PubMed

Wu, Marcelo; Han, Zhanghua; Van, Vien

2010-05-24

Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Temporal and spatial variation in the fouling of silicone coatings in Pearl Harbor, Hawaii.

PubMed

Holm, E R; Nedved, B T; Phillips, N; Deangelis, K L; Hadfield, M G; Smith, C M

2000-01-01

An antifouling or foul-release coating cannot be globally effective if it does not perform well in a range of environmental conditions, against a diversity of fouling organisms. From 1996 to 1998, the field test sites participating in the United States Navy's Office of Naval Research 6.2 Biofouling program examined global variation in the performance of 3 silicone foul-release coatings, viz. GE RTV11, Dow Corning RTV 3140, and Intersleek (International Coatings Ltd), together with a control anticorrosive coating (Ameron Protective Coatings F-150 series). At the University of Hawaii's test site in Pearl Harbor, significant differences were observed among the coatings in the rate of accumulation of fouling. The control coating failed rapidly; after 180-220 d immersion a community dominated by molluscs and sponges developed that persisted for the remainder of the experiment. Fouling of the GE and Dow Corning silicone coatings was slower, but eventually reached a similar community structure and coverage as the control coatings. The Intersleek coating remained lightly fouled throughout the experiment. Spatial variation in the structure of the community fouling the coatings was observed, but not in the extent of fouling. The rate of accumulation of fouling reflected differences among the coatings in adhesion of the tubeworm Hydroides elegans. The surface properties of these coatings may have affected the rate of fouling and the structure of the fouling community through their influence on larval settlement and subsequent interactions with other residents, predators, and the physical environment.

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Scattering rings in optically anisotropic porous silicon

NASA Astrophysics Data System (ADS)

Oton, C. J.; Gaburro, Z.; Ghulinyan, M.; Pancheri, L.; Bettotti, P.; Negro, L. Dal; Pavesi, L.

2002-12-01

We report the observation of strongly anisotropic scattering of laser light at oblique incidence on a (100)-oriented porous silicon layer. The scattered light forms cones tangent to the incident and reflected beams. The conical pattern is caused by scattering on the vertical walls of pores, which are straight along the layer thickness. The light cone defines structured light rings onto a screen normal to the cone axis. We explain the various structures by optical anisotropy of porous silicon. For the sample under analysis, we directly measure from the ring patterns a value of Δn/nord=8% of positive birefringence.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Three-dimensional surface profile intensity correction for spatially modulated imaging

NASA Astrophysics Data System (ADS)

Gioux, Sylvain; Mazhar, Amaan; Cuccia, David J.; Durkin, Anthony J.; Tromberg, Bruce J.; Frangioni, John V.

2009-05-01

We describe a noncontact profile correction technique for quantitative, wide-field optical measurement of tissue absorption (μa) and reduced scattering (μs') coefficients, based on geometric correction of the sample's Lambertian (diffuse) reflectance intensity. Because the projection of structured light onto an object is the basis for both phase-shifting profilometry and modulated imaging, we were able to develop a single instrument capable of performing both techniques. In so doing, the surface of the three-dimensional object could be acquired and used to extract the object's optical properties. The optical properties of flat polydimethylsiloxane (silicone) phantoms with homogenous tissue-like optical properties were extracted, with and without profilometry correction, after vertical translation and tilting of the phantoms at various angles. Objects having a complex shape, including a hemispheric silicone phantom and human fingers, were acquired and similarly processed, with vascular constriction of a finger being readily detectable through changes in its optical properties. Using profilometry correction, the accuracy of extracted absorption and reduced scattering coefficients improved from two- to ten-fold for surfaces having height variations as much as 3 cm and tilt angles as high as 40 deg. These data lay the foundation for employing structured light for quantitative imaging during surgery.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Improving performance of Si/CdS micro-/nanoribbon p-n heterojunction light emitting diodes by trenched structure

NASA Astrophysics Data System (ADS)

Huang, Shiyuan; Wu, Yuanpeng; Ma, Xiangyang; Yang, Zongyin; Liu, Xu; Yang, Qing

2018-05-01

Realizing high performance silicon based light sources has been an unremitting pursuit for researchers. In this letter, we propose a simple structure to enhance electroluminescence emission and reduce the threshold of injected current of silicon/CdS micro-/nanoribbon p-n heterojunction visible light emitting diodes, by fabricating trenched structure on silicon substrate to mount CdS micro-/nanoribbon. A series of experiments and simulation analysis favors the rationality and validity of our mounting design. After mounting the CdS micro-/nanoribbon, the optical field confinement increases, and absorption and losses from high refractive silicon substrate are effectively reduced. Meanwhile the sharp change of silicon substrate near heterojunction also facilitates the balance between electron current and hole current, which substantially conduces to the stable amplification of electroluminescence emission in CdS micro-/nanoribbon.

Method for improving the stability of amorphous silicon

DOEpatents

Branz, Howard M.

2004-03-30

A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

PubMed

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

NASA Astrophysics Data System (ADS)

Xu, Zejing

Silicon nanoparticles are attractive candidates for biological, photovoltaic and energy storage applications due to their size dependent optoelectronic properties. These include tunable light emission, high brightness, and stability against photo-bleaching relative to organic dyes (see Chapter 1). The preparation and characterization of silicon nanoparticle based hybrid nanomaterials and their relevance to photovoltaic and biological applications are described. The surface-passivated silicon nanoparticles were produced in one step from the reactive high-energy ball milling (RHEBM) of silicon wafers with various organic ligands. The surface structure and optical properties of the passivated silicon nanoparticles were systematically characterized. Fast approaches for purifying and at the same time size separating the silicon nanoparticles using a gravity GPC column were developed. The hydrodynamic diameter and size distribution of these size-separated silicon nanoparticles were determined using GPC and Diffusion Ordered NMR Spectroscopy (DOSY) as fast, reliable alternative approaches to TEM. Water soluble silicon nanoparticles were synthesized by grafting PEG polymers onto functionalized silicon nanoparticles with distal alkyne or azide moieties. The surface-functionalized silicon nanoparticles were produced from the reactive high-energy ball milling (RHEBM) of silicon wafers with a mixture of either 5-chloro-1-pentyne in 1-pentyne or 1,7 octadiyne in 1-hexyne to afford air and water stable chloroalkyl or alkynyl terminated nanoparticles, respectively. Nanoparticles with the ω-chloroalkyl substituents were easily converted to ω-azidoalkyl groups through the reaction of the silicon nanoparticles with sodium azide in DMF. The azido terminated nanoparticles were then grafted with monoalkynyl-PEG polymers using a copper catalyzed alkyne-azide cycloaddition (CuAAC) reaction to afford core-shell silicon nanoparticles with a covalently attached PEG shell. Covalently linked silicon nanoparticle clusters were synthesized via the CuAAC "click" reaction of functional silicon nanoparticles with α,ω-functional PEG polymers of various lengths. Dynamic light scattering studies show that the flexible globular nanoparticle arrays undergo a solvent dependent change in volume (ethanol> dichloromethane> toluene) similar in behavior to hydrogel nanocomposites. A novel light-harvesting complex and artificial photosynthetic material based on silicon nanoparticles was designed and synthesized. Silicon nanoparticles were used as nanoscaffolds for organizing the porphyrins to form light-harvesting complexes thereby enhancing the light absorption of the system. The energy transfer from silicon nanoparticles to porphyrin acceptors was investigated by both steady-state and time-resolved fluorescence spectroscopy. The energy transfer efficiency depended on the donor-acceptor ratio and the distance between the nanoparticle and the porphyrin ring. The addition of C60 resulted in the formation of silicon nanoparticle-porphyrin-fullerene nanoclusters which led to charge separation upon irradiation of the porphyrin ring. The electron-transfer process between the porphyrin and fullerene was investigated by femto-second transient absorption spectroscopy. Finally, the water soluble silicon nanoparticles were used as nanocarriers in photodynamic therapeutic application, in which can selectively deliver porphyrins into human embryonic kidney 293T (HEK293T) cells. In particular, the PEGylated alkynyl-porphyrins were conjugated onto the azido-terminated silicon nanoparticles via a CuAAC "click" reaction. The resultant PEGylated porphyrin grafted silicon nanoparticles have diameters around 13.5 +/- 3.8 nm. The cryo-TEM and conventional TEM analysis proved that the PEGylated porphyrin grafted silicon nanoparticle could form the micelle-like structures at higher concentration in water via self-assembly. The UV-Vis absorption analysis demonstrated that the silicon nanoparticle could reduce the porphyrin aggregation in water which can reduce the photophysical activity of porphyrin. In addition, the nanoparticle complex was capable of producing singlet oxygen when the porphyrin units were excited by light. The cell studies demonstrated that the silicon nanoparticle could deliver the porphyrin drugs into HEK293T cells and accumulate in the mitochondria where the porphyrin could serve as an efficient photosensitizer to kill the cells via mitochondrial apoptotic pathway.

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

PubMed

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

PubMed Central

Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

2012-01-01

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only. Introduction Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested. Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10. The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only. PMID:22805108

Shining a New Light on Silicon PV Manufacturing - Continuum Magazine |

Science.gov Websites

lines. Photo by Dennis Schroeder, NREL Shining a New Light on Silicon PV Manufacturing Groundbreaking system and can be automatically eliminated. Photo by Dennis Schroeder, NREL Tackling the Serious Issue of

Linear and passive silicon optical isolator

PubMed Central

Wang, Chen; Zhong, Xiao-Lan; Li, Zhi-Yuan

2012-01-01

On-chip optical isolation plays a key role in optical communications and computing based on silicon integrated photonic structures and has attracted great attentions for long years. Recently there have appeared hot controversies upon whether isolation of light can be realized via linear and passive photonic structures. Here we demonstrate optical isolation of infrared light in purely linear and passive silicon photonic structures. Both numerical simulations and experimental measurements show that the round-trip transmissivity of in-plane infrared light across a silicon photonic crystal slab heterojunction diode could be two orders of magnitudes smaller than the forward transmissivity at around 1,550 nm with a bandwidth of about 50 nm, indicating good performance of optical isolation. The occurrence of in-plane light isolation is attributed to the information dissipation due to off-plane and side-way scattering and selective modal conversion in the multiple-channel structure and has no conflict with the reciprocal principle. PMID:22993699

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Efficient Second-Harmonic Generation in Nanocrystalline Silicon Nanoparticles.

PubMed

Makarov, Sergey V; Petrov, Mihail I; Zywietz, Urs; Milichko, Valentin; Zuev, Dmitry; Lopanitsyna, Natalia; Kuksin, Alexey; Mukhin, Ivan; Zograf, George; Ubyivovk, Evgeniy; Smirnova, Daria A; Starikov, Sergey; Chichkov, Boris N; Kivshar, Yuri S

2017-05-10

Recent trends to employ high-index dielectric particles in nanophotonics are motivated by their reduced dissipative losses and large resonant enhancement of nonlinear effects at the nanoscale. Because silicon is a centrosymmetric material, the studies of nonlinear optical properties of silicon nanoparticles have been targeting primarily the third-harmonic generation effects. Here we demonstrate, both experimentally and theoretically, that resonantly excited nanocrystalline silicon nanoparticles fabricated by an optimized laser printing technique can exhibit strong second-harmonic generation (SHG) effects. We attribute an unexpectedly high yield of the nonlinear conversion to a nanocrystalline structure of nanoparticles supporting the Mie resonances. The demonstrated efficient SHG at green light from a single silicon nanoparticle is 2 orders of magnitude higher than that from unstructured silicon films. This efficiency is significantly higher than that of many plasmonic nanostructures and small silicon nanoparticles in the visible range, and it can be useful for a design of nonlinear nanoantennas and silicon-based integrated light sources.

Maximum likelihood positioning and energy correction for scintillation detectors

NASA Astrophysics Data System (ADS)

Lerche, Christoph W.; Salomon, André; Goldschmidt, Benjamin; Lodomez, Sarah; Weissler, Björn; Solf, Torsten

2016-02-01

An algorithm for determining the crystal pixel and the gamma ray energy with scintillation detectors for PET is presented. The algorithm uses Likelihood Maximisation (ML) and therefore is inherently robust to missing data caused by defect or paralysed photo detector pixels. We tested the algorithm on a highly integrated MRI compatible small animal PET insert. The scintillation detector blocks of the PET gantry were built with the newly developed digital Silicon Photomultiplier (SiPM) technology from Philips Digital Photon Counting and LYSO pixel arrays with a pitch of 1 mm and length of 12 mm. Light sharing was used to readout the scintillation light from the 30× 30 scintillator pixel array with an 8× 8 SiPM array. For the performance evaluation of the proposed algorithm, we measured the scanner’s spatial resolution, energy resolution, singles and prompt count rate performance, and image noise. These values were compared to corresponding values obtained with Center of Gravity (CoG) based positioning methods for different scintillation light trigger thresholds and also for different energy windows. While all positioning algorithms showed similar spatial resolution, a clear advantage for the ML method was observed when comparing the PET scanner’s overall single and prompt detection efficiency, image noise, and energy resolution to the CoG based methods. Further, ML positioning reduces the dependence of image quality on scanner configuration parameters and was the only method that allowed achieving highest energy resolution, count rate performance and spatial resolution at the same time.

Measurement of bite force variables related to human discrimination of left-right hardness differences of silicone rubber samples placed between the incisors.

PubMed

Dan, Haruka; Azuma, Teruaki; Hayakawa, Fumiyo; Kohyama, Kaoru

2005-05-01

This study was designed to examine human subjects' ability to discriminate between spatially different bite pressures. We measured actual bite pressure distribution when subjects simultaneously bit two silicone rubber samples with different hardnesses using their right and left incisors. They were instructed to compare the hardness of these two rubber samples and indicate which was harder (right or left). The correct-answer rates were statistically significant at P < 0.05 for all pairs of different right and left silicone rubber hardnesses. Simultaneous bite measurements using a multiple-point sheet sensor demonstrated that the bite force, active pressure and maximum pressure point were greater for the harder silicone rubber sample. The difference between the left and right was statistically significant (P < 0.05) for all pairs with different silicone rubber hardnesses. We demonstrated for the first time that subjects could perceive and discriminate between spatially different bite pressures during a single bite with incisors. Differences of the bite force, pressure and the maximum pressure point between the right and left silicone samples should be sensory cues for spatial hardness discrimination.

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

PubMed

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Resolution enhancement using simultaneous couple illumination

NASA Astrophysics Data System (ADS)

Hussain, Anwar; Martínez Fuentes, José Luis

2016-10-01

A super-resolution technique based on structured illumination created by a liquid crystal on silicon spatial light modulator (LCOS-SLM) is presented. Single and simultaneous pairs of tilted beams are generated to illuminate a target object. Resolution enhancement of an optical 4f system is demonstrated by using numerical simulations. The resulting intensity images are recorded at a charged couple device (CCD) and stored in the computer memory for further processing. One dimension enhancement can be performed with only 15 images. Two dimensional complete improvement requires 153 different images. The resolution of the optical system is extended three times compared to the band limited system.

First characterization of a digital SiPM based time-of-flight PET detector with 1 mm spatial resolution

NASA Astrophysics Data System (ADS)

Seifert, Stefan; van der Lei, Gerben; van Dam, Herman T.; Schaart, Dennis R.

2013-05-01

Monolithic scintillator detectors can offer a combination of spatial resolution, energy resolution, timing performance, depth-of-interaction information, and detection efficiency that make this type of detector a promising candidate for application in clinical, time-of-flight (TOF) positron emission tomography (PET). In such detectors the scintillation light is distributed over a relatively large number of photosensor pixels and the light intensity per pixel can be relatively low. Therefore, monolithic scintillator detectors are expected to benefit from the low readout noise offered by a novel photosensor called the digital silicon photomultiplier (dSiPM). Here, we present a first experimental characterization of a TOF PET detector comprising a 24 × 24 × 10 mm3 LSO:Ce,0.2%Ca scintillator read out by a dSiPM array (DPC-6400-44-22) developed by Philips Digital Photon Counting. A spatial resolution of ˜1 mm full-width-at-half-maximum (FWHM) averaged over the entire crystal was obtained (varying from just below 1 mm FWHM in the detector center to ˜1.2 mm FWHM close to the edges). Furthermore, the bias in the position estimation at the crystal edges that is typically found in monolithic scintillators is well below 1 mm even in the corners of the crystal.

Ray trace visualization of negative refraction of light in two-dimensional air-bridged silicon photonic crystal slabs at 1.55 microm.

PubMed

Gan, Lin; Liu, Ya-Zhao; Li, Jiang-Yan; Zhang, Ze-Bo; Zhang, Dao-Zhong; Li, Zhi-Yuan

2009-06-08

We demonstrate design, fabrication, and ray trace observation of negative refraction of near-infrared light in a two-dimensional square lattice of air holes etched into an air-bridged silicon slab. Special surface morphologies are designed to reduce the impedance mismatch when light refracts from a homogeneous silicon slab into the photonic crystal slab. We clearly observed negative refraction of infrared light for TE-like modes in a broad wavelength range by using scanning near-field optical microscopy technology. The experimental results are in good agreement with finite-difference time-domain simulations. The results indicate the designed photonic crystal structure can serve as polarization beam splitter.

Anomalous light trapping enhancement in a two-dimensional gold nanobowl array with an amorphous silicon coating.

PubMed

Yang, Liu; Kou, Pengfei; He, Nan; Dai, Hao; He, Sailing

2017-06-26

A facile polymethyl methacrylate-assisted turnover-transfer approach is developed to fabricate uniform hexagonal gold nanobowl arrays. The bare array shows inferior light trapping ability compared to its inverted counterpart (a gold nanospherical shell array). Surprisingly, after being coated with a 60-nm thick amorphous silicon film, an anomalous light trapping enhancement is observed with a significantly enhanced average absorption (82%), while for the inverted nanostructure, the light trapping becomes greatly weakened with an average absorption of only 66%. Systematic experimental and theoretical results show that the main reason for the opposite light trapping behaviors lies in the top amorphous silicon coating, which plays an important role in mediating the excitation of surface plasmon polaritons and the electric field distributions in both nanostructures.

Scalable High-Efficiency Thin Crystalline Silicon Photovoltaic Cells Enabled by Light-Trapping Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Gang; Branham, Matthew S.; Hsu, Wei-Chun

2014-09-02

This report summarizes the research activities of the Chen group at MIT over the last two years pertaining to our research effort developing and proving light-trapping designs for ultrathin crystalline silicon solar cells. We present a new world record efficiency for a sub-20-micron crystalline silicon device, as well as details on the combined photonic/electronic transport simulation we developed for photovoltaic applications.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Quantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature

DOE PAGES

Nguyen, Hieu T.; Johnston, Steve; Paduthol, Appu; ...

2017-09-01

A micro-photoluminescence-based technique is presented, to quantify and map sheet resistances of boron-diffused layers in silicon solar cell precursors with micron-scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily-doped layers, yielding a broader photoluminescence spectrum at the long-wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping density, the impacts of photon reabsorption on the analysis can be avoided; thus, an accurate characterization of the sheet resistance can be made. This metric is demonstrated to be better representative of themore » sheet resistance than the surface doping density or the total dopant concentration of the diffused layer. The technique is applied to quantify sheet resistances of 12-um-wide diffused fingers in interdigitated back-contact solar cell precursors and large diffused areas. The results are confirmed by both 4-point probe and time-of-flight secondary-ion mass spectrometry measurements. Lastly, the practical limitations associated with extending the proposed technique into an imaging mode are presented and explained.« less

Quantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hieu T.; Johnston, Steve; Paduthol, Appu

A micro-photoluminescence-based technique is presented, to quantify and map sheet resistances of boron-diffused layers in silicon solar cell precursors with micron-scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily-doped layers, yielding a broader photoluminescence spectrum at the long-wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping density, the impacts of photon reabsorption on the analysis can be avoided; thus, an accurate characterization of the sheet resistance can be made. This metric is demonstrated to be better representative of themore » sheet resistance than the surface doping density or the total dopant concentration of the diffused layer. The technique is applied to quantify sheet resistances of 12-um-wide diffused fingers in interdigitated back-contact solar cell precursors and large diffused areas. The results are confirmed by both 4-point probe and time-of-flight secondary-ion mass spectrometry measurements. Lastly, the practical limitations associated with extending the proposed technique into an imaging mode are presented and explained.« less

Light-adjustable lens.

PubMed Central

Schwartz, Daniel M

2003-01-01

PURPOSE: First, to determine whether a silicone light-adjustable intraocular lens (IOL) can be fabricated and adjusted precisely with a light delivery device (LDD). Second, to determine the biocompatibility of an adjustable IOL and whether the lens can be adjusted precisely in vivo. METHODS: After fabrication of a light-adjustable silicone formulation, IOLs were made and tested in vitro for cytotoxicity, leaching, precision of adjustment, optical quality after adjustment, and mechanical properties. Light-adjustable IOLs were then tested in vivo for biocompatibility and precision of adjustment in a rabbit model. In collaboration with Zeiss-Meditec, a digital LDD was developed and tested to correct for higher-order aberrations in light-adjustable IOLs. RESULTS: The results establish that a biocompatible silicone IOL can be fabricated and adjusted using safe levels of light. There was no evidence of cytotoxicity or leaching. Testing of mechanical properties revealed no significant differences from commercial controls. Implantation of light-adjustable lenses in rabbits demonstrated- excellent biocompatibility after 6 months, comparable to a commercially available IOL. In vivo spherical (hyperopic and myopic) adjustment in rabbits was achieved using an analog light delivery system. The digital light delivery system was tested and achieved correction of higher-order aberrations. CONCLUSION: A silicone light-adjustable IOL and LDD have been developed to enable postoperative, noninvasive adjustment of lens power. The ability to correct higher-order aberrations in these materials has broad potential applicability for optimization of vision in patients undergoing cataract and refractive surgery. PMID:14971588

Black thin film silicon

NASA Astrophysics Data System (ADS)

Koynov, Svetoslav; Brandt, Martin S.; Stutzmann, Martin

2011-08-01

"Black etching" has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The present work is focused on the optical effects induced by the black-etching treatment on hydrogenated amorphous and microcrystalline silicon thin films, in particular with respect to their application in solar cells. In addition to a strong reduction of the reflectivity, efficient light trapping within the modified thin films is found. The enhancement of the optical absorption due to the light trapping is investigated via photometric measurements and photothermal deflection spectroscopy. The correlation of the texture morphology (characterized via atomic force microscopy) with the optical effects is discussed in terms of an effective medium with gradually varying optical density and in the framework of the theory of statistical light trapping. Photoconductivity spectra directly show that the light trapping causes a significant prolongation of the light path within the black silicon films by up to 15 μm for ˜1 μm thick films, leading to a significant increase of the absorption in the red.

Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling.

PubMed

Ma, Zhongyuan; Ni, Xiaodong; Zhang, Wenping; Jiang, Xiaofan; Yang, Huafeng; Yu, Jie; Wang, Wen; Xu, Ling; Xu, Jun; Chen, Kunji; Feng, Duan

2014-11-17

A significant enhancement of blue light emission from amorphous oxidized silicon nitride (a-SiNx:O) films is achieved by introduction of ordered and size-controllable arrays of Ag nanoparticles between the silicon substrate and a-SiNx:O films. Using hexagonal arrays of Ag nanoparticles fabricated by nanosphere lithography, the localized surface plasmons (LSPs) resonance can effectively increase the internal quantum efficiency from 3.9% to 13.3%. Theoretical calculation confirms that the electromagnetic field-intensity enhancement is through the dipole surface plasma coupling with the excitons of a-SiNx:O films, which demonstrates a-SiNx:O films with enhanced blue emission are promising for silicon-based light-emitting applications by patterned Ag arrays.

Characterization studies of silicon photomultipliers and crystals matrices for a novel time of flight PET detector

NASA Astrophysics Data System (ADS)

Auffray, E.; Ben Mimoun Bel Hadj, F.; Cortinovis, D.; Doroud, K.; Garutti, E.; Lecoq, P.; Liu, Z.; Martinez, R.; Paganoni, M.; Pizzichemi, M.; Silenzi, A.; Xu, C.; Zvolský, M.

2015-06-01

This paper describes the characterization of crystal matrices and silicon photomultiplier arrays for a novel Positron Emission Tomography (PET) detector, namely the external plate of the EndoTOFPET-US system. The EndoTOFPET-US collaboration aims to integrate Time-Of-Flight PET with ultrasound endoscopy in a novel multimodal device, capable to support the development of new biomarkers for prostate and pancreatic tumors. The detector consists in two parts: a PET head mounted on an ultrasound probe and an external PET plate. The challenging goal of 1 mm spatial resolution for the PET image requires a detector with small crystal size, and therefore high channel density: 4096 LYSO crystals individually readout by Silicon Photomultipliers (SiPM) make up the external plate. The quality and properties of these components must be assessed before the assembly. The dark count rate, gain, breakdown voltage and correlated noise of the SiPMs are measured, while the LYSO crystals are evaluated in terms of light yield and energy resolution. In order to effectively reduce the noise in the PET image, high time resolution for the gamma detection is mandatory. The Coincidence Time Resolution (CTR) of all the SiPMs assembled with crystals is measured, and results show a value close to the demanding goal of 200 ps FWHM. The light output is evaluated for every channel for a preliminary detector calibration, showing an average of about 1800 pixels fired on the SiPM for a 511 keV interaction. Finally, the average energy resolution at 511 keV is about 13 %, enough for effective Compton rejection.

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

2011-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

2009-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Direct-patterned optical waveguides on amorphous silicon films

DOEpatents

Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

2005-08-02

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

PubMed

Xu, Kaikai

2013-09-20

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

PubMed

Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

2017-08-31

Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI 3 ) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

Light Weight Silicon Mirrors for Space Instrumentation

NASA Technical Reports Server (NTRS)

Bly, Vincent T.; Hill, Peter C.; Hagopian, John G.; Strojay, Carl R.; Miller, Timothy

2012-01-01

Each mirror is a monolithic structure from a single crystal of silicon. The mirrors are light weighted after the optical surface is ground and polished. Mirrors made during the initial phase of this work were typically 1/50 lambda or better (RMS at 633 n m)

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

NASA Astrophysics Data System (ADS)

Skenes, Kevin; Kumar, Arkadeep; Prasath, R. G. R.; Danyluk, Steven

2018-02-01

Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear.

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Interaction between light and highly confined hypersound in a silicon photonic nanowire

NASA Astrophysics Data System (ADS)

van Laer, Raphaël; Kuyken, Bart; van Thourhout, Dries; Baets, Roel

2015-03-01

In the past decade there has been a surge in research at the boundary between photonics and phononics. Most efforts have centred on coupling light to motion in a high-quality optical cavity, typically geared towards manipulating the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic wires. Here we demonstrate, for the first time, such a giant overlap between near-infrared light and gigahertz sound co-localized in a small-core silicon wire. The wire is supported by a tiny pillar to block the path for external phonon leakage, trapping 10 GHz phonons in an area of less than 0.1 μm2. Because our geometry can also be studied in microcavities, it paves the way for complete fusion between the fields of cavity optomechanics and Brillouin scattering. The results bode well for the realization of optically driven lasers/sasers, isolators and comb generators on a densely integrated silicon chip.

Large-scale quantum photonic circuits in silicon

NASA Astrophysics Data System (ADS)

Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

2016-08-01

Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

Predictable quantum efficient detector based on n-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

Ultrastructural effects of silicone oil on the clear crystalline lens of the human eye.

PubMed

Soliman, Wael; Sharaf, Mohamed; Abdelazeem, Khaled; El-Gamal, Dalia; Nafady, Allam

2018-03-01

To evaluate light and electron microscopic changes of the anterior capsule and its epithelium after clear lens extraction of vitrectomized myopic eyes with silicone oil tamponade. This prospective, controlled, non-randomized, interventional study included 20 anterior lens capsular specimens that were excised during combined clear lens extraction and silicone oil removal from previously vitrectomized highly myopic patients with silicone oil tamponade for previous retinal detachment surgeries. The specimens were examined via light microscopy and electron microscopy and compared with 20 anterior capsule specimens removed during clear lens extraction of non-vitrectomized highly myopic eyes. Light microscopic examination of clear lens anterior capsule specimens of vitrectomized myopic eyes filled with silicone oil showed relatively more flat cells with irregular outline of lens' epithelial cells with wide intercellular spaces, deeply stained nuclei, and multiple intracytoplasmic vacuoles. Scanning electron microscopy revealed collagenous surfaces filled with multiple pits, depressions, and abnormal deposits. Transmission electron microscopy revealed lens epithelial cells with apoptotic changes, many cytoplasmic vacuoles, and filopodia-like protrusions between lens epithelial cells and the capsule. Epithelial proliferation and multilayering were also observed. silicone oil may play a role in the development of apoptotic and histopathological changes in clear lens epithelial cells. Clarity of the lens at the time of silicone oil removal does not indicate an absence of cataractous changes. We found justification of combined clear lens extraction and silicone oil removal or combined phacovitrectomy when silicone oil injection is planned, but further long-term studies with larger patient groups are required.

Photovoltage field-effect transistors

NASA Astrophysics Data System (ADS)

Adinolfi, Valerio; Sargent, Edward H.

2017-02-01

The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III-V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

Direct glass bonded high specific power silicon solar cells for space applications

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Rand, J. A.; Cummings, J. R.; Lampo, S. M.; Shreve, K. P.; Barnett, Allen M.

1991-01-01

A lightweight, radiation hard, high performance, ultra-thin silicon solar cell is described that incorporates light trapping and a cover glass as an integral part of the device. The manufacturing feasibility of high specific power, radiation insensitive, thin silicon solar cells was demonstrated experimentally and with a model. Ultra-thin, light trapping structures were fabricated and the light trapping demonstrated experimentally. The design uses a micro-machined, grooved back surface to increase the optical path length by a factor of 20. This silicon solar cell will be highly tolerant to radiation because the base width is less than 25 microns making it insensitive to reduction in minority carrier lifetime. Since the silicon is bonded without silicone adhesives, this solar cell will also be insensitive to UV degradation. These solar cells are designed as a form, fit, and function replacement for existing state of the art silicon solar cells with the effect of simultaneously increasing specific power, power/area, and power supply life. Using a 3-mil thick cover glass and a 0.3 g/sq cm supporting Al honeycomb, a specific power for the solar cell plus cover glass and honeycomb of 80.2 W/Kg is projected. The development of this technology can result in a revolutionary improvement in high survivability silicon solar cell products for space with the potential to displace all existing solar cell technologies for single junction space applications.

CMOS-compatible plenoptic detector for LED lighting applications.

PubMed

Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

2015-09-07

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

NASA Astrophysics Data System (ADS)

Kadi, M.; Media, E. M.; Gueddaoui, H.; Outemzabet, R.

2014-09-01

Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 nm. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and κ(λ), the band gap Eg, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

A study on measuring occlusal contact area using silicone impression materials: an application of this method to the bite force measurement system using the pressure-sensitive sheet.

PubMed

Ando, Katsuya; Kurosawa, Masahiro; Fuwa, Yuji; Kondo, Takamasa; Goto, Shigemi

2007-11-01

The aim of this study was to establish an objective and quantitative method of measuring occlusal contact areas. To this end, bite records were taken with a silicone impression material and a light transmission device was used to read the silicone impression material. To examine the effectiveness of this novel method, the occlusal contact area of the silicone impression material and its thickness limit of readable range were measured. Results of this study suggested that easy and highly accurate measurements of occlusal contact area could be obtained by selecting an optimal applied voltage of the light transmission device and an appropriate color of the silicone impression material.

The Gamma Ray Imaging Detector of the AGILE satellite: A novel application of silicon trackers for detection of astrophysics high-energy photons

NASA Astrophysics Data System (ADS)

Rappoldi, Andrea; AGILE Collaboration

2009-10-01

AGILE is a project of the Italian Space Agency (ASI) Scientific Program dedicated to Gamma ray astrophysics. It is designed to be a very light and compact instrument, capable of photon detections and imaging in both the 30 MeV-50 GeV and 18-60 keV energy ranges, with a large field of view (FOV is ˜3 and ˜1 sr, respectively). The core of the instrument (launched on April 23, 2007 from the Indian Space Research Organization's launch facility) is represented by the Gamma Ray Imaging Detector (GRID), which is a silicon tracker developed by the Italian National Institute of Nuclear Physics (INFN), with a spatial resolution of ˜40 μm. The GRID performances have been studied by means of a GEANT Montecarlo, and tested with a dedicated calibration campaign using the tagged gamma beam available at Beam Test Facility (BTF) of INFN Frascati Laboratory.

Conformable large-area position-sensitive photodetectors based on luminescence-collecting silicone waveguides

NASA Astrophysics Data System (ADS)

Bartu, Petr; Koeppe, Robert; Arnold, Nikita; Neulinger, Anton; Fallon, Lisa; Bauer, Siegfried

2010-06-01

Position sensitive detection schemes based on the lateral photoeffect rely on inorganic semiconductors. Such position sensitive devices (PSDs) are reliable and robust, but preparation with large active areas is expensive and use on curved substrates is impossible. Here we present a novel route for the fabrication of conformable PSDs which allows easy preparation on large areas, and use on curved surfaces. Our device is based on stretchable silicone waveguides with embedded fluorescent dyes, used in conjunction with small silicon photodiodes. Impinging laser light (e.g., from a laser pointer) is absorbed by the dye in the PSD and re-emitted as fluorescence light at a larger wavelength. Due to the isotropic emission from the fluorescent dye molecules, most of the re-emitted light is coupled into the planar silicone waveguide and directed to the edges of the device. Here the light signals are detected via embedded small silicon photodiodes arranged in a regular pattern. Using a mathematical algorithm derived by extensive using of models from global positioning system (GPS) systems and human activity monitoring, the position of light spots is easily calculated. Additionally, the device shows high durability against mechanical stress, when clamped in an uniaxial stretcher and mechanically loaded up to 15% strain. The ease of fabrication, conformability, and durability of the device suggests its use as interface devices and as sensor skin for future robots.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

Wavefront correction in two-photon microscopy with a multi-actuator adaptive lens.

PubMed

Bueno, Juan M; Skorsetz, Martin; Bonora, Stefano; Artal, Pablo

2018-05-28

A multi-actuator adaptive lens (AL) was incorporated into a multi-photon (MP) microscope to improve the quality of images of thick samples. Through a hill-climbing procedure the AL corrected for the specimen-induced aberrations enhancing MP images. The final images hardly differed when two different metrics were used, although the sets of Zernike coefficients were not identical. The optimized MP images acquired with the AL were also compared with those obtained with a liquid-crystal-on-silicon spatial light modulator. Results have shown that both devices lead to similar images, which corroborates the usefulness of this AL for MP imaging.

Structure for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2009-01-01

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Multiwavelength metasurfaces through spatial multiplexing

DOE PAGES

Arbabi, Ehsan; Arbabi, Amir; Kamali, Seyedeh Mahsa; ...

2016-09-06

Metasurfaces are two-dimensional arrangements of optical scatterers rationally arranged to control optical wavefronts. Despite the significant advances made in wavefront engineering through metasurfaces, most of these devices are designed for and operate at a single wavelength. Here we show that spatial multiplexing schemes can be applied to increase the number of operation wavelengths. We use a high contrast dielectric transmittarray platform with amorphous silicon nano-posts to demonstrate polarization insensitive metasurface lenses with a numerical aperture of 0.46, that focus light at 915 and 1550 nm to the same focal distance. We investigate two different methods, one based on large scalemore » segmentation and one on meta-atom interleaving, and compare their performances. An important feature of this method is its simple generalization to adding more wavelengths or new functionalities to a device. Furthermore, it provides a relatively straightforward method for achieving multi-functional and multiwavelength metasurface devices.« less

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

On-axis programmable microscope using liquid crystal spatial light modulator

NASA Astrophysics Data System (ADS)

García-Martínez, Pascuala; Martínez, José Luís.; Moreno, Ignacio

2017-06-01

Spatial light modulators (SLM) are currently used in many applications in optical microscopy and imaging. One of the most promising methods is the use of liquid crystal displays (LCD) as programmable phase diffractive optical elements (DOE) placed in the Fourier plane giving access to the spatial frequencies which can be phased shifted individually, allowing to emulate a wealth of contrast enhancing methods for both amplitude and phase samples. We use phase and polarization modulation of LCD to implement an on-axis microscope optical system. The LCD used are Hamamatsu liquid crystal on silicon (LCOS) SLM free of flicker, thus showing a full profit of the SLM space bandwidth, as opposed to optical systems in the literature forced to work off-axis due to the strong zero-order component. Taking benefits of the phase modulation of the LCOS we have implemented different microscopic imaging operations, such as high-pass and low-pass filtering in parallel using programmable blazed gratings. Moreover, we are able to control polarization modulation to display two orthogonal linear state of polarization images than can be subtracted or added by changing the period of the blazed grating. In that sense, Differential Interference Contrast (DIC) microscopy can be easily done by generating two images exploiting the polarization splitting properties when a blazed grating is displayed in the SLM. Biological microscopy samples are also used.

Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

NASA Astrophysics Data System (ADS)

Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.

2018-05-01

A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.

Silicon isotope fractionation in rice and cucumber plants over a life cycle: Laboratory studies at different external silicon concentrations

NASA Astrophysics Data System (ADS)

Sun, Yan; Wu, Lianghuan; Li, Xiaoyan; Sun, Li; Gao, Jianfei; Ding, Tiping

2016-11-01

Understanding the variations of silicon isotopes in terrestrial higher plants can be helpful toward elucidating the global biogeochemical silicon cycle. We studied silicon isotope fractionation in rice and cucumber plants over their entire life cycles. These two different silicon-absorbing plants were grown hydroponically at different external silicon concentrations. The ranges of δ30Si values in rice were -1.89‰ to 1.69‰, -1.81‰ to 1.96‰, and -2.08‰ to 2.02‰ at 0.17 mM, 1.70 mM, and 8.50 mM silicon concentrations, respectively. The ranges of δ30Si values in cucumber were -1.38‰ to 1.21‰, -1.33‰ to 1.26‰, and -1.62‰ to 1.40‰ at 0.085 mM, 0.17 mM, and 1.70 mM external silicon concentrations, respectively. A general increasing trend in δ30Si values from lower to upper plant parts reflected the preferential incorporation of lighter silicon isotopes from transpired water to biogenic opal. Furthermore, the active uptake mechanism regulated by several transporters might have also played an important role in the preferential transport of heavy silicon isotopes into aboveground plant parts. This suggested that silicon isotope fractionation in both rice and cucumber was a Rayleigh-like process. The data on δ30Si values for the whole plants and nutrient solutions indicated that biologically mediated silicon isotope fractionation occurred during silicon uptake by roots. At lower external silicon concentrations, heavy silicon isotopes entered plants more readily than light silicon isotopes. Conversely, at higher external silicon concentrations, light silicon isotopes entered plants more readily than heavy silicon isotopes.

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane.

DTIC Science & Technology

1985-02-18

regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen...addition demonstrated significant changes in the silicon atom profiles near the sheath boundary. Originator supplied keywords include: rf discharge, silane, plasma chemistry , silicon atom, laser-induced fluorescence.

Every photon counts: improving low, mid, and high-spatial frequency errors on astronomical optics and materials with MRF

NASA Astrophysics Data System (ADS)

Maloney, Chris; Lormeau, Jean Pierre; Dumas, Paul

2016-07-01

Many astronomical sensing applications operate in low-light conditions; for these applications every photon counts. Controlling mid-spatial frequencies and surface roughness on astronomical optics are critical for mitigating scattering effects such as flare and energy loss. By improving these two frequency regimes higher contrast images can be collected with improved efficiency. Classically, Magnetorheological Finishing (MRF) has offered an optical fabrication technique to correct low order errors as well has quilting/print-through errors left over in light-weighted optics from conventional polishing techniques. MRF is a deterministic, sub-aperture polishing process that has been used to improve figure on an ever expanding assortment of optical geometries, such as planos, spheres, on and off axis aspheres, primary mirrors and freeform optics. Precision optics are routinely manufactured by this technology with sizes ranging from 5-2,000mm in diameter. MRF can be used for form corrections; turning a sphere into an asphere or free form, but more commonly for figure corrections achieving figure errors as low as 1nm RMS while using careful metrology setups. Recent advancements in MRF technology have improved the polishing performance expected for astronomical optics in low, mid and high spatial frequency regimes. Deterministic figure correction with MRF is compatible with most materials, including some recent examples on Silicon Carbide and RSA905 Aluminum. MRF also has the ability to produce `perfectly-bad' compensating surfaces, which may be used to compensate for measured or modeled optical deformation from sources such as gravity or mounting. In addition, recent advances in MRF technology allow for corrections of mid-spatial wavelengths as small as 1mm simultaneously with form error correction. Efficient midspatial frequency corrections make use of optimized process conditions including raster polishing in combination with a small tool size. Furthermore, a novel MRF fluid, called C30, has been developed to finish surfaces to ultra-low roughness (ULR) and has been used as the low removal rate fluid required for fine figure correction of mid-spatial frequency errors. This novel MRF fluid is able to achieve <4Å RMS on Nickel-plated Aluminum and even <1.5Å RMS roughness on Silicon, Fused Silica and other materials. C30 fluid is best utilized within a fine figure correction process to target mid-spatial frequency errors as well as smooth surface roughness 'for free' all in one step. In this paper we will discuss recent advancements in MRF technology and the ability to meet requirements for precision optics in low, mid and high spatial frequency regimes and how improved MRF performance addresses the need for achieving tight specifications required for astronomical optics.

On the Fringe Field of Wide Angle LC Optical Phased Array

NASA Technical Reports Server (NTRS)

Wang, Xighua; Wang, Bin; Bos, Philip J.; Anderson, James E.; Pouch, John; Miranda, Felix; McManamon, Paul F.

2004-01-01

For free space laser communication, light weighted large deployable optics is a critical component for the transmitter. However, such an optical element will introduce large aberrations due to the fact that the surface figure of the large optics is susceptable to deformation in the space environment. We propose to use a high-resolution liquid crystal spatial light modulator to correct for wavefront aberrations introduced by the primary optical element, and to achieve very fine beam steering and shaping at the same time. A 2-D optical phased array (OPA) antenna based on a Liquid Crystal on Silicon (LCOS) spatial light modulator is described. This device offers a combination of low cost, high resolution, high accuracy, high diffraction efficiency at video speed. To quantitatively understand the influence factor of the different design parameters, a computer simulation of the device is given by the 2-D director simulation and the Finite Difference Time domain (FDTD) simulation. For the 1-D OPA, we define the maximum steering angle to have a grating period of 8 pixel/reset scheme; as for larger steering angles than this criterion, the diffraction efficiency drops dramatically. In this case, the diffraction efficiency of 0.86 and the Strehl ratio of 0.9 are obtained in the simulation. The performance of the device in achieving high resolution wavefront correction and beam steering is also characterized experimentally.

Retrieval of the atomic displacements in the crystal from the coherent X-ray diffraction pattern.

PubMed

Minkevich, A A; Köhl, M; Escoubas, S; Thomas, O; Baumbach, T

2014-07-01

The retrieval of spatially resolved atomic displacements is investigated via the phases of the direct(real)-space image reconstructed from the strained crystal's coherent X-ray diffraction pattern. It is demonstrated that limiting the spatial variation of the first- and second-order spatial displacement derivatives improves convergence of the iterative phase-retrieval algorithm for displacements reconstructions to the true solution. This approach is exploited to retrieve the displacement in a periodic array of silicon lines isolated by silicon dioxide filled trenches.

Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

NASA Astrophysics Data System (ADS)

Timerkaeva, Dilyara; Attaccalite, Claudio; Brenet, Gilles; Caliste, Damien; Pochet, Pascal

2018-04-01

The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

PubMed

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Insights into Mercury's interior structure from geodesy measurements

NASA Astrophysics Data System (ADS)

Rivoldini, A.; Van Hoolst, T.; Trinh, A.

2013-09-01

The measurements of the gravitational field of Mercury by MESSENGER [1] and improved measurements of the spin state of Mercury [2] provide important constraints on the interior structure of Mercury. In particular, these data give strong constraints on the radius and density of Mercury's core and on the core's concentration of sulfur if sulfur is the only light element in the core [3]. Although sulfur is ubiquitously invoked as being the principal candidate light element in terrestrial planet's cores its abundance in the core depends on the redox conditions during planetary formation. MESSENGER data from remote sensing of Mercury's surface [4] indicate a high abundance of sulfur and confirm the low abundance in FeO supporting the hypotheses that Mercury formed under reducing conditions [5]. Therefore, substantial amounts of other light elements like for instance silicon could be present together with sulfur inside Mercury's core. Unlike sulfur, which does almost not partition into solid iron under Mercury's core pressure and temperature conditions, silicon partitions virtually equally between solid and liquid iron. Thus, if silicon is the only light element inside the core, the density jump at the inner-core outer-core boundary is significantly smaller if compared to an Fe - FeS core. If both silicon and sulfur are present inside Mercury's core then as a consequence of a large immiscibility region in liquid Fe - Si - S at Mercury's core conditions and for specific concentrations of light elements [6] a thin layer much enriched in sulfur and depleted in silicon could form at the top of the core. In this study we analyze interior structure models with silicon as the only light element in the core and with both silicon and sulfur in the core. Compared to models with Fe - FeS both settings have different mass distributions within their cores and will likely deform differently due to different elastic properties. Consequently their libration and tides will be different. Here we will use the measured 88 day libration amplitude and polar moment of inertia of Mercury in order to constrain the interior structure of both settings and calculate their tides.

Photocurrent mapping of near-field optical antenna resonances

NASA Astrophysics Data System (ADS)

Barnard, Edward S.; Pala, Ragip A.; Brongersma, Mark L.

2011-09-01

An increasing number of photonics applications make use of nanoscale optical antennas that exhibit a strong, resonant interaction with photons of a specific frequency. The resonant properties of such antennas are conventionally characterized by far-field light-scattering techniques. However, many applications require quantitative knowledge of the near-field behaviour, and existing local field measurement techniques provide only relative, rather than absolute, data. Here, we demonstrate a photodetector platform that uses a silicon-on-insulator substrate to spectrally and spatially map the absolute values of enhanced fields near any type of optical antenna by transducing local electric fields into photocurrent. We are able to quantify the resonant optical and materials properties of nanoscale (~50 nm) and wavelength-scale (~1 µm) metallic antennas as well as high-refractive-index semiconductor antennas. The data agree well with light-scattering measurements, full-field simulations and intuitive resonator models.

Silicate phosphors and white LED technology: improvements and opportunities

NASA Astrophysics Data System (ADS)

Sommer, Christian; Wenzl, Franz P.; Hartmann, Paul; Pachler, Peter; Schweighart, Marko; Leising, Guenther; Tasch, Stefan

2007-09-01

With the advent of a new generation of high brightness LEDs especially in the blue spectral range, white light technology based on phosphor conversion gains maturity for a successful penetration of, e.g., the general lighting market within the next years. Major challenges ahead are originating from the specific demands of the markets on small emission areas, highest possible intensities, long-term color stability, and spatial homogeneity of color coordinates. The LED industry more or less relies on the conversion phosphor classes of YAG, Sulfates, and Silicates, embedded in silicone matrices. A number of conformal coating technologies are in use. The optimization of the coating geometries with the help of software simulation offers a high potential for increased angular color homogeneity and high package densities, especially when secondary optics is in use. We report on recent progress in simulating parameters for improved white LEDs manufactured by coating technologies.

Asymmetric light transmission based on coupling between photonic crystal waveguides and L1/L3 cavity

NASA Astrophysics Data System (ADS)

Zhang, Jinqiannan; Chai, Hongyu; Yu, Zhongyuan; Cheng, Xiang; Ye, Han; Liu, Yumin

2017-09-01

A compact design of all-optical diode with mode conversion function based on a two-dimensional photonic crystal waveguide and an L1 or L3 cavity is theoretically investigated. The proposed photonic crystal structures comprise a triangular arrangement of air holes embedded in a silicon substrate. Asymmetric light propagation is achieved via the spatial mode match/mismatch in the coupling region. The simulations show that at each cavity's resonance frequency, the transmission efficiency of the structure with the L1 and L3 cavities reach 79% and 73%, while the corresponding unidirectionalities are 46 and 37 dB, respectively. The functional frequency can be controlled by simply adjusting the radii of specific air holes in the L1 and L3 cavities. The proposed structure can be used as a frequency filter, a beam splitter and has potential applications in all-optical integrated circuits.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

NASA Astrophysics Data System (ADS)

Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

2017-12-01

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

Flexible integration of free-standing nanowires into silicon photonics.

PubMed

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Structural diversity and electronic properties in potassium silicides

NASA Astrophysics Data System (ADS)

Hao, Chun-Mei; Li, Yunguo; Huang, Hong-Mei; Li, Yan-Ling

2018-05-01

Stable potassium silicides in the complete compositional landscape were systematically explored up to 30 GPa using the variable-composition evolutionary structure prediction method. The results show that K4Si, K3Si, K5Si2, K2Si, K3Si2, KSi, KSi2, KSi3, and K8Si46 have their stability fields in the phase diagram. The spatial dimensional diversity of polymerized silicon atoms (0D "isolated" anion, dimer, Si4 group, 1D zigzag chain, 2D layer, and 3D network) under the potassium sublattice was uncovered as silicon content increases. Especially, the 2D layered silicon presents interestingly a variety of shapes, such as the "4 + 6" ring, "4 + 8"ring, and 8-membered ring. K-Si bonding exhibits a mixed covalency and ionicity, while Si-Si bonding is always of covalent character. Semiconductivity or metallicity mainly depends on the form of sublattices and K:Si ratio, which allows us to find more semiconductors in the Si-rich side when closed-shell K cations are encompassed by polymerized Si. The semiconducting silicides present strong absorption in the infrared and visible light range. These findings open up the avenue for experimental synthesis of alkali metal-IVA compounds and potential applications as battery electrode materials or photoelectric materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Preventing light-induced degradation in multicrystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindroos, J., E-mail: jeanette.lindroos@aalto.fi; Boulfrad, Y.; Yli-Koski, M.

2014-04-21

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Preventing light-induced degradation in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

2014-04-01

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Texturing Silicon Nanowires for Highly Localized Optical Modulation of Cellular Dynamics.

PubMed

Fang, Yin; Jiang, Yuanwen; Acaron Ledesma, Hector; Yi, Jaeseok; Gao, Xiang; Weiss, Dara E; Shi, Fengyuan; Tian, Bozhi

2018-06-18

Engineered silicon-based materials can display photoelectric and photothermal responses under light illumination, which may lead to further innovations at the silicon-biology interfaces. Silicon nanowires have small radial dimensions, promising as highly localized cellular modulators, however the single crystalline form typically has limited photothermal efficacy due to the poor light absorption and fast heat dissipation. In this work, we report strategies to improve the photothermal response from silicon nanowires by introducing nanoscale textures on the surface and in the bulk. We next demonstrate high-resolution extracellular modulation of calcium dynamics in a number of mammalian cells including glial cells, neurons, and cancer cells. The new materials may be broadly used in probing and modulating electrical and chemical signals at the subcellular length scale, which is currently a challenge in the field of electrophysiology or cellular engineering.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

PubMed

Peters, M; Battaglia, C; Forberich, K; Bläsi, B; Sahraei, N; Aberle, A G

2012-12-31

Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control.

PubMed

Chong, Katie E; Staude, Isabelle; James, Anthony; Dominguez, Jason; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi S; Luk, Ting S; Decker, Manuel; Neshev, Dragomir N; Brener, Igal; Kivshar, Yuri S

2015-08-12

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

Choosing a Silicone Encapsulant for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Velderrain, Michelle

2011-12-01

Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

NASA Astrophysics Data System (ADS)

Sokolovskij, R.; Liu, P.; van Zeijl, H. W.; Mimoun, B.; Zhang, G. Q.

2015-05-01

Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies.

Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuckelberger, M., E-mail: michael.stuckelberger@epfl.ch; Riesen, Y.; Despeisse, M.

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both themore » p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.« less

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

A Near-Infrared Spectrometer to Measure Zodiacal Light Absorption Spectrum

NASA Technical Reports Server (NTRS)

Kutyrev, A. S.; Arendt, R.; Dwek, E.; Kimble, R.; Moseley, S. H.; Rapchun, D.; Silverberg, R. F.

2010-01-01

We have developed a high throughput infrared spectrometer for zodiacal light fraunhofer lines measurements. The instrument is based on a cryogenic dual silicon Fabry-Perot etalon which is designed to achieve high signal to noise Fraunhofer line profile measurements. Very large aperture silicon Fabry-Perot etalons and fast camera optics make these measurements possible. The results of the absorption line profile measurements will provide a model free measure of the zodiacal Light intensity in the near infrared. The knowledge of the zodiacal light brightness is crucial for accurate subtraction of zodiacal light foreground for accurate measure of the extragalactic background light after the subtraction of zodiacal light foreground. We present the final design of the instrument and the first results of its performance.

Novel high refractive index, thermally conductive additives for high brightness white LEDs

NASA Astrophysics Data System (ADS)

Hutchison, Richard Stephen

In prior works the inclusion of nanoparticle fillers has typically been shown to increase the thermal conductivity or refractive index of polymer nanocomposites separately. High refractive index zirconia nanoparticles have already proved their merit in increasing the optical efficiency of encapsulated light emitting diodes. However, the thermal properties of zirconia-silicone nanocomposites have yet to be investigated. While phosphor-converted light emitting diodes are at the forefront of solid-state lighting technologies for producing white light, they are plagued by efficiency losses due to excessive heating at the semiconductor die and in and around the phosphor particles, as well as photon scattering losses in the phosphor layer. It would then be of great interest if the high refractive index nanoparticles were found to both be capable of increasing the refractive index, thus reducing the optical scattering, and also the thermal conductivity, channeling more heat away from the LED die and phosphors, mitigating efficiency losses from heat. Thermal conductance measurements on unfilled and nanoparticle loaded silicone samples were conducted to quantify the effect of the zirconia nanoparticle loading on silicone nanocomposite thermal conductivity. An increase in thermal conductivity from 0.27 W/mK to 0.49 W/mK from base silicone to silicone with 33.5 wt% zirconia nanoparticles was observed. This trend closely mirrored a basic rule of mixtures prediction, implying a further enhancement in thermal conductivity could be achieved at higher nanoparticle loadings. The optical properties of transparency and light extraction efficiency of these composites were also investigated. While overall the zirconia nanocomposite showed good transparency, there was a slight decrease at the shorter wavelengths with increasing zirconia content. For longer wavelength LEDs, such as green or red, this might not matter, but phosphor-converted white LEDs use a blue LED as the photon source making this decrease in transparency important to note. This decrease in transparency may be partially or wholly why a decrease in light extraction efficiency is observed at the 33.5 wt% zirconia loading fraction used for the LED samples. Preliminary aging studies under full and enhanced power conditions were conducted over 500 and 1000 hours to observe any changes in the spectral output power and phosphor conversion efficiency of the LEDs due to inclusion of the zirconia nanoparticles. It was found that the nanoparticles have no negative effect on the aging properties but also show no enhancement in relative output power over a preliminary aging study. However, their inclusion did result in increased phosphor conversion efficiency over the use of an unfilled silicone. This increase was seen as around a 10% or greater enhancement for the nanocomposite over that for the base Sylgard silicone. These experiments were originally conducted on the commercially available methylated Sylgard 184 silicone and then again on a higher refractive index methyl-phenyl silicone from Momentive. While some of the results from the Momentive silicone were perplexing, it was seen that, even without the inclusion of nanoparticles, the Momentive silicone had a higher refractive index, better aging properties, and a higher phosphor conversion efficiency over 500 hours under enhanced power conditions, warranting further studies into methyl-phenyl silicone nanocomposites.

Unambiguous demonstration of soliton evolution in slow-light silicon photonic crystal waveguides with SFG-XFROG.

PubMed

Li, Xiujian; Liao, Jiali; Nie, Yongming; Marko, Matthew; Jia, Hui; Liu, Ju; Wang, Xiaochun; Wong, Chee Wei

2015-04-20

We demonstrate the temporal and spectral evolution of picosecond soliton in the slow light silicon photonic crystal waveguides (PhCWs) by sum frequency generation cross-correlation frequency resolved optical grating (SFG-XFROG) and nonlinear Schrödinger equation (NLSE) modeling. The reference pulses for the SFG-XFROG measurements are unambiguously pre-characterized by the second harmonic generation frequency resolved optical gating (SHG-FROG) assisted with the combination of NLSE simulations and optical spectrum analyzer (OSA) measurements. Regardless of the inevitable nonlinear two photon absorption, high order soliton compressions have been observed remarkably owing to the slow light enhanced nonlinear effects in the silicon PhCWs. Both the measurements and the further numerical analyses of the pulse dynamics indicate that, the free carrier dispersion (FCD) enhanced by the slow light effects is mainly responsible for the compression, the acceleration, and the spectral blue shift of the soliton.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

NREL Paves the Way to Commercialization of Silicon Ink (Fact Sheet)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

In 2008, Innovalight, a start-up company in Sunnyvale, California, invented a liquid form of silicon, called Silicon Ink. It contains silicon nanoparticles that are suspended evenly within the solution. Those nanoparticles contain dopant atoms that can be driven into silicon solar cells, which changes the conductivity of the silicon and creates the internal electric fields that are needed to turn photons into electrons -- and thus into electricity. The ink is applied with a standard screen printer, already commonly used in the solar industry. The distinguishing feature of Silicon Ink is that it can be distributed in exact concentrations inmore » precisely the correct locations on the surface of the solar cell. This allows most of the surface to be lightly doped, enhancing its response to blue light, while heavily doping the area around the electrical contacts, raising the conductivity in that area to allow the contact to work more efficiently. The accuracy and uniformity of the ink distribution allows the production of solar cells that achieve higher power production at a minimal additional cost.« less

Transmutation doping of silicon solar cells

NASA Technical Reports Server (NTRS)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Method of making self-aligned lightly-doped-drain structure for MOS transistors

DOEpatents

Weiner, Kurt H.; Carey, Paul G.

2001-01-01

A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. During the process, the silicon in the source/drain region is melted by the laser energy. Impurities from the gas phase diffuse into the molten silicon to appropriately dope the source/drain regions. By controlling the energy of the laser, a lightly-doped-drain can be formed in one processing step. This is accomplished by first using a single high energy laser pulse to melt the silicon to a significant depth and thus the amount of dopants incorporated into the silicon is small. Furthermore, the dopants incorporated during this step diffuse to the edge of the MOS transistor gate structure. Next, many low energy laser pulses are used to heavily dope the source/drain silicon only in a very shallow region. Because of two-dimensional heat transfer at the MOS transistor gate edge, the low energy pulses are inset from the region initially doped by the high energy pulse. By computer control of the laser energy, the single high energy laser pulse and the subsequent low energy laser pulses are carried out in a single operational step to produce a self-aligned lightly-doped-drain-structure.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintainingmore » high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.« less

Apparatus for melt growth of crystalline semiconductor sheets

DOEpatents

Ciszek, Theodore F.; Hurd, Jeffery L.

1986-01-01

An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

NASA Astrophysics Data System (ADS)

Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

2018-04-01

A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

NASA Astrophysics Data System (ADS)

Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

2018-04-01

Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

NASA Astrophysics Data System (ADS)

Hamadeh, H.; Naddaf, M.; Jazmati, A.

2008-12-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Eigenmode multiplexing with SLM for volume holographic data storage

NASA Astrophysics Data System (ADS)

Chen, Guanghao; Miller, Bo E.; Takashima, Yuzuru

2017-08-01

The cavity supports the orthogonal reference beam families as its eigenmodes while enhancing the reference beam power. Such orthogonal eigenmodes are used as additional degree of freedom to multiplex data pages, consequently increase storage densities for volume Holographic Data Storage Systems (HDSS) when the maximum number of multiplexed data page is limited by geometrical factor. Image bearing holograms are multiplexed by orthogonal phase code multiplexing via Hermite-Gaussian eigenmodes in a Fe:LiNbO3 medium with a 532 nm laser at multiple Bragg angles by using Liquid Crystal on Silicon (LCOS) spatial light modulators (SLMs) in reference arms. Total of nine holograms are recorded with three angular and three eigenmode.

Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

NASA Astrophysics Data System (ADS)

Qin, Chuan; Gao, Xumin; Yuan, Jialei; Shi, Zheng; Jiang, Yuan; Liu, Yuhuai; Wang, Yongjin; Amano, Hiroshi

2018-05-01

A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

TimepixCam: a fast optical imager with time-stamping

NASA Astrophysics Data System (ADS)

Fisher-Levine, M.; Nomerotski, A.

2016-03-01

We describe a novel fast optical imager, TimepixCam, based on an optimized silicon pixel sensor with a thin entrance window, read out by a Timepix ASIC. TimepixCam is able to record and time-stamp light flashes in excess of 1,000 photons with high quantum efficiency in the 400-1000nm wavelength range with 20ns timing resolution, corresponding to an effective rate of 50 Megaframes per second. The camera was used for imaging ions impinging on a microchannel plate followed by a phosphor screen. Possible applications include spatial and velocity map imaging of ions in time-of-flight mass spectroscopy; coincidence imaging of ions and electrons, and other time-resolved types of imaging spectroscopy.

Light-Trapping Characteristics of Ag Nanoparticles for Enhancing the Energy Conversion Efficiency of Hybrid Solar Cells.

PubMed

Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Yan, Lanqin; Xu, Lihua; Fu, Yaolong

2017-10-18

In this paper, we investigated the optical and electrical characteristics of hybrid solar cells using silicon pyramid/Ag nanoparticle and nanowire/Ag nanoparticle nanocomposite structures, which are obtained by the Ag-assisted electroless etching method. We introduced the application of the physical and chemical properties of Ag nanoparticles on four kinds of solar cells: silicon pyramid, silicon pyramid/PEDOT:PSS, silicon nanowire, and silicon nanowire/PEDOT:PSS. We simulated the absorption of these structures for different parameters. Furthermore, we also show the result of the current density-voltage (J-V) characterization of the sample with Ag nanoparticles, which exhibits an improvement of the power conversion efficiency (PCE) in contrast to the samples without Ag nanoparticles. It was found that the properties of light-trapping of Ag nanoparticles have a prominent impact on improving the PCE of hybrid solar cells.

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

NASA Astrophysics Data System (ADS)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

Hybrid dielectric light trapping designs for thin-film CdZnTe/Si tandem cells

DOE PAGES

Chung, H.; Zhou, C.; Tee, X. T.; ...

2016-05-20

Tandem solar cells consisting of high bandgap cadmium telluride alloys atop crystalline silicon have potential for high efficiencies exceeding the Shockley-Queisser limit. However, experimental results have fallen well below this goal significantly because of non-ideal current matching and light trapping. In this work, we simulate cadmium zinc telluride (CZT) and crystalline silicon (c-Si) tandems as an exemplary system to show the role that a hybrid light trapping and bandgap engineering approach can play in improving performance and lowering materials costs for tandem solar cells incorporating crystalline silicon. This work consists of two steps. First, we optimize absorption in the crystallinemore » silicon layer with front pyramidal texturing and asymmetric dielectric back gratings, which results in 121% absorption enhancement from a planar structure. Then, using this pre-optimized light trapping scheme, we model the dispersion of the Cd xZn 1-xTe alloys, and then adjust the bandgap to realize the best current matching for a range of CZT thicknesses. Using experimental parameters, the corresponding maximum efficiency is predicted to be 16.08 % for a total tandem cell thickness of only 2.2 μm.« less

Experimental evaluation of the resolution improvement provided by a silicon PET probe.

PubMed

Brzeziński, K; Oliver, J F; Gillam, J; Rafecas, M; Studen, A; Grkovski, M; Kagan, H; Smith, S; Llosá, G; Lacasta, C; Clinthorne, N H

2016-09-01

A high-resolution PET system, which incorporates a silicon detector probe into a conventional PET scanner, has been proposed to obtain increased image quality in a limited region of interest. Detailed simulation studies have previously shown that the additional probe information improves the spatial resolution of the reconstructed image and increases lesion detectability, with no cost to other image quality measures. The current study expands on the previous work by using a laboratory prototype of the silicon PET-probe system to examine the resolution improvement in an experimental setting. Two different versions of the probe prototype were assessed, both consisting of a back-to-back pair of 1-mm thick silicon pad detectors, one arranged in 32 × 16 arrays of 1.4 mm × 1.4 mm pixels and the other in 40 × 26 arrays of 1.0 mm × 1.0 mm pixels. Each detector was read out by a set of VATAGP7 ASICs and a custom-designed data acquisition board which allowed trigger and data interfacing with the PET scanner, itself consisting of BGO block detectors segmented into 8 × 6 arrays of 6 mm × 12 mm × 30 mm crystals. Limited-angle probe data was acquired from a group of Na-22 point-like sources in order to observe the maximum resolution achievable using the probe system. Data from a Derenzo-like resolution phantom was acquired, then scaled to obtain similar statistical quality as that of previous simulation studies. In this case, images were reconstructed using measurements of the PET ring alone and with the inclusion of the probe data. Images of the Na-22 source demonstrated a resolution of 1.5 mm FWHM in the probe data, the PET ring resolution being approximately 6 mm. Profiles taken through the image of the Derenzo-like phantom showed a clear increase in spatial resolution. Improvements in peak-to-valley ratios of 50% and 38%, in the 4.8 mm and 4.0 mm phantom features respectively, were observed, while previously unresolvable 3.2 mm features were brought to light by the addition of the probe. These results support the possibility of improving the image resolution of a clinical PET scanner using the silicon PET-probe.

Design of dual-diameter nanoholes for efficient solar-light harvesting

PubMed Central

2014-01-01

A dual-diameter nanohole (DNH) photovoltaic system is proposed, where a top (bottom) layer with large (small) nanoholes is used to improve the absorption for the short-wavelength (long-wavelength) solar incidence, leading to a broadband light absorption enhancement. Through three-dimensional finite-element simulation, the core device parameters, including the lattice constant, nanohole diameters, and nanohole depths, are engineered in order to realize the best light-matter coupling between nanostructured silicon and solar spectrum. The designed bare DNH system exhibits an outstanding absorption capability with a photocurrent density (under perfect internal quantum process) predicted to be 27.93 mA/cm2, which is 17.39%, 26.17%, and over 100% higher than the best single-nanohole (SNH) system, SNH system with an identical Si volume, and equivalent planar configuration, respectively. Considering the fabrication feasibility, a modified DNH system with an anti-reflection coating and back silver reflector is examined by simulating both optical absorption and carrier transport in a coupled way in frequency and three-dimensional spatial domains, achieving a light-conversion efficiency of 13.72%. PACS 85.60.-q; Optoelectronic device; 84.60.Jt; Photovoltaic conversion PMID:25258605

Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

NASA Astrophysics Data System (ADS)

Recht, Daniel

This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Xiao, Sanshui; Mortensen, Niels A.

2012-10-01

Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Workshop summary: New silicon cells

NASA Technical Reports Server (NTRS)

Meulenberg, A.; Iles, P. A.

1993-01-01

The workshop on new silicon cells held during SPRAT12 is summarized. A smaller than average group attended this workshop reflecting the reduction in research dollars available to this portion of the photovoltaics community. Despite the maturity of the silicon technology, a core of the group maintained an excitement about new developments and potential opportunities. The group addressed both the implications and the applications of recent developments. Topics discussed include: light trapping and ultrathin silicon cells; different uses for silicon cells; new silicon cell developments; and radiation tolerant high efficiency cells.

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

NASA Astrophysics Data System (ADS)

Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

2013-03-01

Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

Method and apparatus for melt growth of crystalline semiconductor sheets

DOEpatents

Ciszek, T.F.; Hurd, J.L.

1981-02-25

An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

An analog silicon retina with multichip configuration.

PubMed

Kameda, Seiji; Yagi, Tetsuya

2006-01-01

The neuromorphic silicon retina is a novel analog very large scale integrated circuit that emulates the structure and the function of the retinal neuronal circuit. We fabricated a neuromorphic silicon retina, in which sample/hold circuits were embedded to generate fluctuation-suppressed outputs in the previous study [1]. The applications of this silicon retina, however, are limited because of a low spatial resolution and computational variability. In this paper, we have fabricated a multichip silicon retina in which the functional network circuits are divided into two chips: the photoreceptor network chip (P chip) and the horizontal cell network chip (H chip). The output images of the P chip are transferred to the H chip with analog voltages through the line-parallel transfer bus. The sample/hold circuits embedded in the P and H chips compensate for the pattern noise generated on the circuits, including the analog communication pathway. Using the multichip silicon retina together with an off-chip differential amplifier, spatial filtering of the image with an odd- and an even-symmetric orientation selective receptive fields was carried out in real time. The analog data transfer method in the present multichip silicon retina is useful to design analog neuromorphic multichip systems that mimic the hierarchical structure of neuronal networks in the visual system.

Impact of solidification dynamics on crystal properties of silicon molten by a nanosecond laser pulse

NASA Astrophysics Data System (ADS)

Meyer, Fabian; Büchler, Andreas; Brand, Andreas A.; Dasa, Manoj K.; Nekarda, Jan F.; Preu, Ralf

2018-03-01

In this study, we use pump-probe microscopy to examine the melting and solidification dynamics of silicon during and after a UV laser pulse with a duration of 30 ns. Below the ablation threshold, we observe lateral melt front contraction velocities of up to 600 ms^{-1}. The peak velocities spatially coincide with a ring of lower crystallinity within the formerly molten area, as we show with spatially resolved Raman spectroscopy.

Thermometry of Silicon Nanoparticles

NASA Astrophysics Data System (ADS)

Mecklenburg, Matthew; Zutter, Brian; Regan, B. C.

2018-01-01

Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly scaled modern transistors. As a step toward addressing this problem, we measure the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250 °C , using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this reasoning, we find that measurements of the plasmon energy provide an independent measure of the nanoparticle temperature consistent with that of the heater chip's macroscopic, dual-function heater-and-thermometer to within the 5% accuracy of the thermometer's calibration. Thus, silicon has the potential to provide its own high-spatial-resolution thermometric readout signal via measurements of its volume plasmon energy. Furthermore, nanoparticles can, in general, serve as convenient nanothermometers for in situ electron-microscopy experiments.

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Full-color OLED on silicon microdisplay

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

What controls silicon isotope fractionation during dissolution of diatom opal?

NASA Astrophysics Data System (ADS)

Wetzel, F.; de Souza, G. F.; Reynolds, B. C.

2014-04-01

The silicon isotope composition of opal frustules from photosynthesising diatoms is a promising tool for studying past changes in the marine silicon cycle, and indirectly that of carbon. Dissolution of this opal may be accompanied by silicon isotope fractionation that could disturb the pristine silicon isotope composition of diatom opal acquired in the surface ocean. It has previously been shown that dissolution of fresh and sediment trap diatom opal in seawater does fractionate silicon isotopes. However, as the mechanism of silicon isotope fractionation remained elusive, it is uncertain whether opal dissolution in general is associated with silicon isotope fractionation considering that opal chemistry and surface properties are spatially and temporally (i.e. opal of different age) diverse. In this study we dissolved sediment core diatom opal in 5 mM NaOH and found that this process is not associated with significant silicon isotope fractionation. Since no variability of the isotope effect was observed over a wide range of dissolution rates, we can rule out the suggestion that back-reactions had a significant influence on the net isotope effect. Similarly, we did not observe an impact of temperature, specific surface area, or degree of undersaturation on silicon isotope partitioning during dissolution, such that these can most likely also be ruled out as controlling factors. We discuss the potential impacts of the chemical composition of the dissolution medium and age of diatom opal on silicon isotope fractionation during dissolution. It appears most likely that the controlling mechanism of silicon isotope fractionation during dissolution is related to the reactivity, or potentially, aluminium content of the opal. Such a dependency would imply that silicon isotope fractionation during dissolution of diatom opal is spatially and temporally variable. However, since the isotope effects during dissolution are small, the silicon isotope composition of diatom opal appears to be robust against dissolution in the deep sea sedimentary environment.

Light Trapping for Silicon Solar Cells: Theory and Experiment

NASA Astrophysics Data System (ADS)

Zhao, Hui

Crystalline silicon solar cells have been the mainstream technology for photovoltaic energy conversion since their invention in 1954. Since silicon is an indirect band gap material, its absorption coefficient is low for much of the solar spectrum, and the highest conversion efficiencies are achieved only in cells that are thicker than about 0.1 mm. Light trapping by total internal reflection is important to increase the optical absorption in silicon layers, and becomes increasingly important as the layers are thinned. Light trapping is typically characterized by the enhancement of the absorptance of a solar cell beyond the value for a single pass of the incident beam through an absorbing semiconductor layer. Using an equipartition argument, in 1982 Yablonovitch calculated an enhancement of 4n2 , where n is the refractive index. We have extracted effective light-trapping enhancements from published external quantum efficiency spectra in several dozen silicon solar cells. These results show that this "thermodynamic" enhancement has never been achieved experimentally. The reasons for incomplete light trapping could be poor anti-reflection coating, inefficient light scattering, and parasitic absorption. We report the light-trapping properties of nanocrystalline silicon nip solar cells deposited onto two types of Ag/ZnO backreflectors at United Solar Ovonic, LLC. We prepared the first type by first making silver nanparticles onto a stainless steel substrate, and then overcoating the nanoparticles with a second silver layer. The second type was prepared at United Solar using a continuous silver film. Both types were then overcoated with a ZnO film. The root mean square roughness varied from 27 to 61 nm, and diffuse reflectance at 1000 nm wavelength varied from 0.4 to 0.8. The finished cells have a thin, indium-tin oxide layer on the top that acts as an antireflection coating. For both backreflector types, the short-circuit photocurrent densities J SC for solar illumination were about 25 mA/cm2 for 1.5 micron cells. We also measured external quantum efficiency spectra and optical reflectance spectra, which were only slightly affected by the back reflector morphology. We performed a thermodynamic calculation for the optical absorptance in the silicon layer and the top oxide layer to explain the experimental results; the calculation is an extension of previous work by Stuart and Hall that incorporates the antireflection properties and absorption in the top oxide film. From our calculations and experimental measurements, we concluded that parasitic absorption in this film is the prominent reason for incomplete light trapping in these cells. To reduce the optical parasitic loss in the top oxide layer, we propose a bilayer design, and show the possible benefits to the photocurrent density.

Light scattering and light transmittance of cadaver eye-explanted intraocular lenses of different materials.

PubMed

Morris, Caleb; Werner, Liliana; Barra, Daniel; Liu, Erica; Stallings, Shannon; Floyd, Anne

2014-01-01

To evaluate light scattering and light transmittance in cadaver eye-explanted intraocular lenses (IOLs) manufactured from different materials. John A. Moran Eye Center, University of Utah, Salt Lake City, Utah, USA. Experimental study. Forty-nine pseudophakic cadaver eyes were selected according to IOL material/type and implantation duration, and the IOLs were explanted. Hydrophobic acrylic, hydrophilic acrylic, poly(methyl methacrylate) (PMMA), and silicone IOLs were included. Gross and light microscopy was performed for all IOLs. Light scattering was measured with an EAS 1000 Scheimpflug camera, and light transmittance was assessed using a Lambda 35 UV/Vis spectrophotometer (single-beam configuration with an RSA PE-20 integrating sphere). Analyses were performed at room temperature in the hydrated state and compared with analyses of controls. The highest levels of surface light scattering were measured for 3-piece hydrophobic acrylic, which was also the IOL type with the longest implantation duration among the Acrysof hydrophobic acrylic IOLs. Hydrophilic acrylic, PMMA, and silicone IOLs exhibited relatively low light-scattering levels. The lowest light-scattering levels were observed with PMMA IOLs (1-piece looped and 3-piece) and plate silicone IOLs, which represent the IOL types with the longest implantation duration in this series. Light transmittance values measured for all IOL types appeared to be similar to the values of the corresponding control IOLs. The phenomenon of surface light scattering (nanoglistenings) is more particularly related to hydrophobic acrylic IOLs and increases with implantation time. No significant effect of surface light scattering on IOL light transmittance was found. Copyright © 2013 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Multi-pinhole SPECT Imaging with Silicon Strip Detectors

PubMed Central

Peterson, Todd E.; Shokouhi, Sepideh; Furenlid, Lars R.; Wilson, Donald W.

2010-01-01

Silicon double-sided strip detectors offer outstanding instrinsic spatial resolution with reasonable detection efficiency for iodine-125 emissions. This spatial resolution allows for multiple-pinhole imaging at low magnification, minimizing the problem of multiplexing. We have conducted imaging studies using a prototype system that utilizes a detector of 300-micrometer thickness and 50-micrometer strip pitch together with a 23-pinhole collimator. These studies include an investigation of the synthetic-collimator imaging approach, which combines multiple-pinhole projections acquired at multiple magnifications to obtain tomographic reconstructions from limited-angle data using the ML-EM algorithm. Sub-millimeter spatial resolution was obtained, demonstrating the basic validity of this approach. PMID:20953300

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Hao, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu; Optical Nanostructures Laboratory, Columbia University, New York, New York 10027; Gu, Tingyi, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu

2016-03-14

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

FAST TRACK COMMUNICATION: White light emission from chemically synthesized ZnO-porous silicon nanocomposite

NASA Astrophysics Data System (ADS)

Singh, R. G.; Singh, Fouran; Kanjilal, D.; Agarwal, V.; Mehra, R. M.

2009-03-01

White light emission across the extended visible region of the electromagnetic spectrum from the ZnO-porous silicon (PS) nanocomposite is reported. Nanocrystallites of ZnO were grown inside the spongy structures of PS by the chemical route of sol-gel spin coating. The property of the material arises from versatile interactions among the host structures of PS and ZnO. The origin of the observed extended white light emission from 1.4 to 3.3 eV is discussed by developing a flat band energy diagram.

Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of "micromorph" tandem solar cells

NASA Astrophysics Data System (ADS)

Chatterjee, P.; Roca i Cabarrocas, P.

2018-01-01

Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), "micromorph" tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter's low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the initial efficiency suffers. The advantage of such an IR is ultimately seen in the stabilized state since the LID of a thin top cell is low. We also find that for high stabilized efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency.

Luneburg lens in silicon photonics.

PubMed

Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

2011-03-14

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

Periodic silicon nanostructures for spectroscopic microsensors

NASA Astrophysics Data System (ADS)

Wehrspohn, Ralf B.; Gesemann, Benjamin; Pergande, Daniel; Geppert, Torsten M.; Schweizer, Stefan L.; Moretton, Susanne; Lambrecht, Armin

2011-09-01

Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-compact photonic crystal gas cells. It is conceptually based on low group velocities inside a photonic crystal gas cell and anti-reflection layers coupling light into the device. Experimentally, an enhancement of the CO2 infrared absorption by a factor of 2.6 to 3.5 as compared to an empty cell, due to slow light inside a 2D silicon photonic crystal gas cell, was observed; this is in excellent agreement with numerical simulations. In addition we report on silicon nanotip arrays, suitable for gas ionization in ion mobility microspectrometers (micro-IMS) having detection ranges in principle down to the ppt-range. Such instruments allow the detection of explosives, chemical warfare agents, and illicit drugs, e.g., at airports. We describe the fabrication process of large-scale-ordered nanotips with different tip shapes. Both silicon microstructures have been fabricated by photoelectrochemical etching of silicon.

5 × 5 cm2 silicon photonic crystal slabs on glass and plastic foil exhibiting broadband absorption and high-intensity near-fields

PubMed Central

Becker, C.; Wyss, P.; Eisenhauer, D.; Probst, J.; Preidel, V.; Hammerschmidt, M.; Burger, S.

2014-01-01

Crystalline silicon photonic crystal slabs are widely used in various photonics applications. So far, the commercial success of such structures is still limited owing to the lack of cost-effective fabrication processes enabling large nanopatterned areas (≫ 1 cm2). We present a simple method for producing crystalline silicon nanohole arrays of up to 5 × 5 cm2 size with lattice pitches between 600 and 1000 nm on glass and flexible plastic substrates. Exclusively up-scalable, fast fabrication processes are applied such as nanoimprint-lithography and silicon evaporation. The broadband light trapping efficiency of the arrays is among the best values reported for large-area experimental crystalline silicon nanostructures. Further, measured photonic crystal resonance modes are in good accordance with light scattering simulations predicting strong near-field intensity enhancements greater than 500. Hence, the large-area silicon nanohole arrays might become a promising platform for ultrathin solar cells on lightweight substrates, high-sensitive optical biosensors, and nonlinear optics. PMID:25073935

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

PubMed

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

The behavior of single-crystal silicon to dynamic loading using in-situ X-ray diffraction and phase contrast imaging

NASA Astrophysics Data System (ADS)

Lee, Hae Ja; Xing, Zhou; Galtier, Eric; Arnold, Brice; Granados, Eduardo; Brown, Shaughnessy B.; Tavella, Franz; McBride, Emma; Fry, Alan; Nagler, Bob; Schropp, Andreas; Seiboth, Frank; Samberg, Dirk; Schroer, Christian; Gleason, Arianna E.; Higginbotham, Andrew

Hydrostatic and uniaxial compression studies have revealed that crystalline silicon undergoes phase transitions from a cubic diamond structure to a variety of phases including orthorhombic Imma phase, body-centered tetragonal phase, and a hexagonal primitive phase. The dynamic response of silicon at high pressure, however, is not well understood. Phase contrast imaging has proven to be a powerful tool for probing density changes caused by the shock propagation into a material. In order to characterize the elastic and phase transitions, we image shock waves in Si with high spatial resolution using the LCLS X-ray free electron laser and Matter in Extreme Conditions instrument. In this study, the long pulse optical laser with pseudo-flat top shape creates high pressures up to 60 GPa. We measure the crystal structure by observing X-ray diffraction orthogonal to the shock propagation direction over a range of pressures. We describe the capability of simultaneously performing phase contrast imaging and in situ X-ray diffraction during shock loading and discuss the dynamic response of Si in high-pressure phases Use of the Linac Coherent Light Source (LCLS), SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515. The MEC instrument is supported by.

Exploiting metamaterials, plasmonics and nanoantennas concepts in silicon photonics

NASA Astrophysics Data System (ADS)

Rodríguez-Fortuño, Francisco J.; Espinosa-Soria, Alba; Martínez, Alejandro

2016-12-01

The interaction of light with subwavelength metallic nano-structures is at the heart of different current scientific hot topics, namely plasmonics, metamaterials and nanoantennas. Research in these disciplines during the last decade has given rise to new, powerful concepts providing an unprecedented degree of control over light manipulation at the nanoscale. However, only recently have these concepts been used to increase the capabilities of light processing in current photonic integrated circuits (PICs), which traditionally rely only on dielectric materials with element sizes larger than the light wavelength. Amongst the different PIC platforms, silicon photonics is expected to become mainstream, since manufacturing using well-established CMOS processes enables the mass production of low-cost PICs. In this review we discuss the benefits of introducing recent concepts arisen from the fields of metamaterials, plasmonics and nanoantennas into a silicon photonics integrated platform. We review existing works in this direction and discuss how this hybrid approach can lead to the improvement of current PICs enabling novel and disruptive applications in photonics.

Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Deng, Can; Tan, Xinyu; Jiang, Lihua; Tu, Yiteng; Ye, Mao; Yi, Yasha

2018-01-01

Structural design with high light absorption is the key challenge for thin film solar cells because of its poor absorption. In this paper, the light-trapping performance of silicon inclined nanohole arrays is systematically studied. The finite difference time domain method is used to calculate the optical absorption of different inclination angles in different periods and diameters. The results indicate that the inclined nanoholes with inclination angles between 5° and 45° demonstrate greater light-trapping ability than their counterparts of the vertical nanoholes, and they also show that by choosing the optimal parameters for the inclined nanoholes, a 31.2 mA/cm2 short circuit photocurrent density could be achieved, which is 10.25% higher than the best vertical nanohole system and 105.26% higher than bare silicon with a thickness of 2330 nm. The design principle proposed in this work gives a guideline for choosing reasonable parameters in the application of solar cells.

Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process.

PubMed

Jin, Jonghan; Kim, Jae Wan; Kang, Chu-Shik; Kim, Jong-Ahn; Lee, Sunghun

2012-02-27

We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.

Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

NASA Astrophysics Data System (ADS)

Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

2016-03-01

Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low light scattering. Likewise, SEM cannot be used effectively for post-inspection defect review and classification of these very shallow types of defects. To verify and obtain accurate shape and three-dimensional information of those defects, automatic defect review AFM (ADR AFM) is utilized for accurate locating and imaging of DOI. In ADR AFM, non-contact mode imaging is used for non-destructive characterization and preserving tip sharpness for data repeatability and reproducibility. Locating DOI and imaging are performed automatically with a throughput of many defects per hour. Topography images of DOI has been collected and compared with SEM images. The ADR AFM has been shown as a non-destructive metrology tool for defect review and obtaining three-dimensional topography information.

Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study

NASA Astrophysics Data System (ADS)

Lantreibecq, A.; Legros, M.; Plassat, N.; Monchoux, J. P.; Pihan, E.

2018-02-01

The PV properties of wafers processed from Cz-seeded directionally solidified silicon ingots suffer from variable structural defects. In this study, we draw an overview on the types of structural defects encountered in the specific case of full 〈1 0 0〉 oriented growth. We found micro twins, background dislocations, and subgrains boundaries. We discuss the possible links between thermomechanical stresses and growth processes with spatial evolution of both background dislocation densities and subgrain boundaries length.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

2018-05-01

High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

Phase sensitive amplification in integrated waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Schroeder, Jochen B.; Zhang, Youngbin; Husko, Chad A.; LeFrancois, Simon; Eggleton, Benjamin J.

2017-02-01

Phase sensitive amplification (PSA) is an attractive technology for integrated all-optical signal processing, due to it's potential for noiseless amplification, phase regeneration and generation of squeezed light. In this talk I will review our results on implementing four-wave-mixing based PSA inside integrated photonic devices. In particular I will discuss PSA in chalcogenide ridge waveguides and silicon slow-light photonic crystals. We achieve PSA in both pump- and signal-degenerate schemes with maximum extinction ratios of 11 (silicon) and 18 (chalcogenide) dB. I will further discuss the influence of two-photon absorption and free carrier effects on the performance of silicon-based PSAs.

Tunable reflecting terahertz filter based on chirped metamaterial structure

PubMed Central

Yang, Jing; Gong, Cheng; Sun, Lu; Chen, Ping; Lin, Lie; Liu, Weiwei

2016-01-01

Tunable reflecting terahertz bandstop filter based on chirped metamaterial structure is demonstrated by numerical simulation. In the metamaterial, the metal bars are concatenated to silicon bars with different lengths. By varying the conductivity of the silicon bars, the reflectivity, central frequency and bandwidth of the metamaterial could be tuned. Light illumination could be introduced to change the conductivity of the silicon bars. Numerical simulations also show that the chirped metamaterial structure is insensitive to the incident angle and polarization-dependent. The proposed chirped metamaterial structure can be operated as a tunable bandstop filter whose modulation depth, bandwidth, shape factor and center frequency can be controlled by light pumping. PMID:27941833

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caër, Charles; Le Roux, Xavier; Cassan, Eric, E-mail: eric.cassan@u-psud.fr

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

The effect of material matching on the stress-induced power degradation for light-redirecting-ribbon-based silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Gou, X. F.; Zhuang, H.; Zhu, J.; Li, X. Y.

2018-01-01

Light redirecting ribbons (LRR) have recently been adopted in crystalline silicon modules in PV industry. The introduction of this LRR may bring additional stress at the boundary of the busbar/wafer contact, which may probably lead to higher power loss after aging. The thermal cycle and electroluminescence (EL) test are employed in this work to investigate this stress-induced power degradation for LRR-based crystalline silicon modules. The obtained results demonstrate that with increase in the thickness of the EVA encapsulant or the decrease in the thickness of the LRR, the power degradation induced by stress can be effectively diminished.

Dielectric metasurfaces solve differential and integro-differential equations.

PubMed

Abdollahramezani, Sajjad; Chizari, Ata; Dorche, Ali Eshaghian; Jamali, Mohammad Vahid; Salehi, Jawad A

2017-04-01

Leveraging subwavelength resonant nanostructures, plasmonic metasurfaces have recently attracted much attention as a breakthrough concept for engineering optical waves both spatially and spectrally. However, inherent ohmic losses concomitant with low coupling efficiencies pose fundamental impediments over their practical applications. Not only can all-dielectric metasurfaces tackle such substantial drawbacks, but also their CMOS-compatible configurations support both Mie resonances that are invariant to the incident angle. Here, we report on a transmittive metasurface comprising arrayed silicon nanodisks embedded in a homogeneous dielectric medium to manipulate phase and amplitude of incident light locally and almost independently. By taking advantage of the interplay between the electric/magnetic resonances and employing general concepts of spatial Fourier transformation, a highly efficient metadevice is proposed to perform mathematical operations including solution of ordinary differential and integro-differential equations with constant coefficients. Our findings further substantiate dielectric metasurfaces as promising candidates for miniaturized, two-dimensional, and planar optical analog computing systems that are much thinner than their conventional lens-based counterparts.

Light Trapping with Silicon Light Funnel Arrays

PubMed Central

Nissan, Yuval; Gabay, Tamir; Shalev, Gil

2018-01-01

Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF) arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase). This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization. PMID:29562685

Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qian; University of the Chinese Academy of Sciences, Beijing 100039; Li, Bincheng, E-mail: bcli@ioe.ac.cn

2015-09-28

Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique withmore » multiple pump beam radii.« less

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE PAGES

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; ...

2015-07-20

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Mercury's core evolution

NASA Astrophysics Data System (ADS)

Deproost, Marie-Hélène; Rivoldini, Attilio; Van Hoolst, Tim

2016-10-01

Remote sensing data of Mercury's surface by MESSENGER indicate that Mercury formed under reducing conditions. As a consequence, silicon is likely the main light element in the core together with a possible small fraction of sulfur. Compared to sulfur, which does almost not partition into solid iron at Mercury's core conditions and strongly decreases the melting temperature, silicon partitions almost equally well between solid and liquid iron and is not very effective at reducing the melting temperature of iron. Silicon as the major light element constituent instead of sulfur therefore implies a significantly higher core liquidus temperature and a decrease in the vigor of compositional convection generated by the release of light elements upon inner core formation.Due to the immiscibility in liquid Fe-Si-S at low pressure (below 15 GPa), the core might also not be homogeneous and consist of an inner S-poor Fe-Si core below a thinner Si-poor Fe-S layer. Here, we study the consequences of a silicon-rich core and the effect of the blanketing Fe-S layer on the thermal evolution of Mercury's core and on the generation of a magnetic field.

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Silicon carbidonitride based phosphors and lighting devices using the same

DOEpatents

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-09-17

Disclosed herein are novel families of silicon carbidonitride phosphor compositions. In certain embodiments, optimal ranges of carbon content have been identified which provide excellent luminescence and thermal stability characteristics.

Scintillation light detectors with Neganov Luke amplification

NASA Astrophysics Data System (ADS)

Isaila, C.; Boslau, O.; Coppi, C.; Feilitzsch, F. v.; Goldstraß, P.; Jagemann, T.; Jochum, J.; Kemmer, J.; Lachenmaier, T.; Lanfranchi, J.-C.; Pahlke, A.; Potzel, W.; Rau, W.; Stark, M.; Wernicke, D.; Westphal, W.

2006-04-01

For an active suppression of the gamma and electron background in the Cryogenic Rare Event Search with Superconducting Thermometers (CRESST) dark matter experiment both phonons and scintillation light generated in a CaWO 4 crystal are detected simultaneously. The phonon signal is read out by a transition edge sensor (TES) on the CaWO 4 crystal. For light detection a silicon absorber equipped with a TES is employed. An efficient background discrimination requires very sensitive light detectors. The threshold can be improved by applying an electric field to the silicon crystal leading to an amplification of the thermal signal due to the Neganov-Luke effect. Measurements showing the improved sensitivity of the light detectors as well as future steps for reducing the observed extra noise will be presented.

Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin

2016-11-14

For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

Near white light emission of silicon nanocrystals

NASA Astrophysics Data System (ADS)

Lee, Soojin; Han, Il-Ki; Cho, Woon-Jo

2003-11-01

Silicon nanoparticles in the range from 2 nm to 5 nm was prepared from Zintl salt, soldium silicide (NaSi) by sonochemical method. This synthesis permits the reaction completed as fast as in a few hours and the easy alkyl-modification of nanocrystals surface at room temperature and ambient pressure. The average size of nanoparticles measured by the dynamic light scattering analysis was 2.7 nm. The high-resolution transmission electron micrograph cofirmed the material identity of nanoparticles as crystalline silicon. FT-IR spectra are consistent with the surface states of nanocrystals that is chlorine- or butyl-capped. The emission peak center moved to longer wavelength (up to 430 nm) with the reaction time, under a 325 nm excitation. The luminescence of silicon colloids looks bright bluish-white under excitation using a commercial low-intensity UV lamp.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

Dynamic Silicon Nanophotonics

DTIC Science & Technology

2013-07-31

sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

Organic light emitting diode with light extracting layer

DOEpatents

Lu, Songwei

2016-06-14

A light extraction substrate includes a glass substrate having a first surface and a second surface. A light extraction layer is formed on at least one of the surfaces. The light extraction layer is a coating, such as a silicon-containing coating, incorporating nanoparticles.

Textile Pressure Sensor Made of Flexible Plastic Optical Fibers

PubMed Central

Rothmaier, Markus; Luong, Minh Phi; Clemens, Frank

2008-01-01

In this paper we report the successful development of pressure sensitive textile prototypes based on flexible optical fibers technology. Our approach is based on thermoplastic silicone fibers, which can be integrated into woven textiles. As soon as pressure at a certain area of the textile is applied to these fibers they change their cross section reversibly, due to their elastomeric character, and a simultaneous change in transmitted light intensity can be detected. We have successfully manufactured two different woven samples with fibers of 0.51 and 0.98 mm diameter in warp and weft direction, forming a pressure sensitive matrix. Determining their physical behavior when a force is applied shows that pressure measurements are feasible. Their usable working range is between 0 and 30 N. Small drifts in the range of 0.2 to 4.6%, over 25 load cycles, could be measured. Finally, a sensor array of 2 × 2 optical fibers was tested for sensitivity, spatial resolution and light coupling between fibers at intersections. PMID:27879938

Eyecup scope—optical recordings of light stimulus-evoked fluorescence signals in the retina

PubMed Central

Hausselt, Susanne E.; Breuninger, Tobias; Castell, Xavier; Denk, Winfried; Margolis, David J.; Detwiler, Peter B.

2009-01-01

Dendritic signals play an essential role in processing visual information in the retina. To study them in neurites too small for electrical recording, we developed an instrument that combines a multi-photon (MP) microscope with a through-the-objective high-resolution visual stimulator. An upright microscope was designed that uses the objective lens for both MP imaging and delivery of visual stimuli to functionally intact retinal explants or eyecup preparations. The stimulator consists of a miniature liquid-crystal-on-silicon display coupled into the optical path of an infrared-excitation laser-scanning microscope. A pair of custom-made dichroic filters allows light from the excitation laser and three spectral bands (‘colors’) from the stimulator to reach the retina, leaving two intermediate bands for fluorescence imaging. Special optics allow displacement of the stimulator focus relative to the imaging focus. Spatially resolved changes in calcium-indicator fluorescence in response to visual stimuli were recorded in dendrites of different types of mammalian retinal neurons. PMID:19023590

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE PAGES

Veale, M. C.; Adkin, P.; Booker, P.; ...

2017-12-04

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veale, M. C.; Adkin, P.; Booker, P.

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Multiple ion beam irradiation for the study of radiation damage in materials

NASA Astrophysics Data System (ADS)

Taller, Stephen; Woodley, David; Getto, Elizabeth; Monterrosa, Anthony M.; Jiao, Zhijie; Toader, Ovidiu; Naab, Fabian; Kubley, Thomas; Dwaraknath, Shyam; Was, Gary S.

2017-12-01

The effects of transmutation produced helium and hydrogen must be included in ion irradiation experiments to emulate the microstructure of reactor irradiated materials. Descriptions of the criteria and systems necessary for multiple ion beam irradiation are presented and validated experimentally. A calculation methodology was developed to quantify the spatial distribution, implantation depth and amount of energy-degraded and implanted light ions when using a thin foil rotating energy degrader during multi-ion beam irradiation. A dual ion implantation using 1.34 MeV Fe+ ions and energy-degraded D+ ions was conducted on single crystal silicon to benchmark the dosimetry used for multi-ion beam irradiations. Secondary Ion Mass Spectroscopy (SIMS) analysis showed good agreement with calculations of the peak implantation depth and the total amount of iron and deuterium implanted. The results establish the capability to quantify the ion fluence from both heavy ion beams and energy-degraded light ion beams for the purpose of using multi-ion beam irradiations to emulate reactor irradiated microstructures.

Biological applications of an LCoS-based programmable array microscope (PAM)

NASA Astrophysics Data System (ADS)

Hagen, Guy M.; Caarls, Wouter; Thomas, Martin; Hill, Andrew; Lidke, Keith A.; Rieger, Bernd; Fritsch, Cornelia; van Geest, Bert; Jovin, Thomas M.; Arndt-Jovin, Donna J.

2007-02-01

We report on a new generation, commercial prototype of a programmable array optical sectioning fluorescence microscope (PAM) for rapid, light efficient 3D imaging of living specimens. The stand-alone module, including light source(s) and detector(s), features an innovative optical design and a ferroelectric liquid-crystal-on-silicon (LCoS) spatial light modulator (SLM) instead of the DMD used in the original PAM design. The LCoS PAM (developed in collaboration with Cairn Research, Ltd.) can be attached to a port of a(ny) unmodified fluorescence microscope. The prototype system currently operated at the Max Planck Institute incorporates a 6-position high-intensity LED illuminator, modulated laser and lamp light sources, and an Andor iXon emCCD camera. The module is mounted on an Olympus IX71 inverted microscope with 60-150X objectives with a Prior Scientific x,y, and z high resolution scanning stages. Further enhancements recently include: (i) point- and line-wise spectral resolution and (ii) lifetime imaging (FLIM) in the frequency domain. Multiphoton operation and other nonlinear techniques should be feasible. The capabilities of the PAM are illustrated by several examples demonstrating single molecule as well as lifetime imaging in live cells, and the unique capability to perform photoconversion with arbitrary patterns and high spatial resolution. Using quantum dot coupled ligands we show real-time binding and subsequent trafficking of individual ligand-growth factor receptor complexes on and in live cells with a temporal resolution and sensitivity exceeding those of conventional CLSM systems. The combined use of a blue laser and parallel LED or visible laser sources permits photoactivation and rapid kinetic analysis of cellular processes probed by photoswitchable visible fluorescent proteins such as DRONPA.

Hard x-ray and gamma-ray imaging and spectroscopy using scintillators coupled to silicon drift detectors

NASA Astrophysics Data System (ADS)

Lechner, P.; Eckhard, R.; Fiorini, C.; Gola, A.; Longoni, A.; Niculae, A.; Peloso, R.; Soltau, H.; Strüder, L.

2008-07-01

Silicon Drift Detectors (SDDs) are used as low-capacitance photon detectors for the optical light emitted by scintillators. The scintillator crystal is directly coupled to the SDD entrance window. The entrance window's transmittance can be optimized for the scintillator characteristic by deposition of a wavelength-selective anti-reflective coating. Compared to conventional photomultiplier tubes the SDD readout offers improved energy resolution and avoids the practical problems of incompatibility with magnetic fields, instrument volume and requirement of high voltage. A compact imaging spectrometer for hard X-rays and γ-rays has been developed by coupling a large area (29 × 26 mm2) monolithic SDD array with 77 hexagonal cells to a single non-structured CsI-scintillator of equal size. The scintillation light generated by the absorption of an energetic photon is seen by a number of detector cells and the position of the photon interaction is reconstructed by the centroid method. The measured spatial resolution of the system (<= 500 μm) is considerably smaller than the SDD cell size (3.2 mm) and in the order required at the focal plane of high energy missions. The energy information is obtained by summing the detector cell signals. Compared to direct converting pixelated detectors, e.g. CdTe with equal position resolution the scintillator-SDD combination requires a considerably lower number of readout channels. In addition it has the advantages of comprehensive material experience, existing technologies, proven long term stability, and practically unlimited availability of high quality material.

Application of the fractional Fourier transform to the design of LCOS based optical interconnects and fiber switches.

PubMed

Robertson, Brian; Zhang, Zichen; Yang, Haining; Redmond, Maura M; Collings, Neil; Liu, Jinsong; Lin, Ruisheng; Jeziorska-Chapman, Anna M; Moore, John R; Crossland, William A; Chu, D P

2012-04-20

It is shown that reflective liquid crystal on silicon (LCOS) spatial light modulator (SLM) based interconnects or fiber switches that use defocus to reduce crosstalk can be evaluated and optimized using a fractional Fourier transform if certain optical symmetry conditions are met. Theoretically the maximum allowable linear hologram phase error compared to a Fourier switch is increased by a factor of six before the target crosstalk for telecom applications of -40 dB is exceeded. A Gerchberg-Saxton algorithm incorporating a fractional Fourier transform modified for use with a reflective LCOS SLM is used to optimize multi-casting holograms in a prototype telecom switch. Experiments are in close agreement to predicted performance.

Development of a Liquefied Noble Gas Time Projection Chamber

NASA Astrophysics Data System (ADS)

Lesser, Ezra; White, Aaron; Aidala, Christine

2015-10-01

Liquefied noble gas detectors have been used for various applications in recent years for detecting neutrinos, neutrons, photons, and potentially dark matter. The University of Michigan is developing a detector with liquid argon to produce scintillation light and ionization electrons. Our data collection method will allow high-resolution energy measurement and spatial reconstruction of detected particles by using multi-pixel silicon photomultipliers (SiPM) and a cylindrical time projection chamber (TPC) with a multi-wire endplate. We have already designed a liquid argon condenser and purification unit surrounded by an insulating vacuum, constructed circuitry for temperature and pressure sensors, and created software to obtain high-accuracy sensor readouts. The status of detector development will be presented. Funded through the Michigan Memorial Phoenix Project.

Optimized 2D array of thin silicon pillars for efficient antireflective coatings in the visible spectrum

PubMed Central

Proust, Julien; Fehrembach, Anne-Laure; Bedu, Frédéric; Ozerov, Igor; Bonod, Nicolas

2016-01-01

Light reflection occuring at the surface of silicon wafers is drastically diminished by etching square pillars of height 110 nm and width 140 nm separated by a 100 nm gap distance in a square lattice. The design of the nanostructure is optimized to widen the spectral tolerance of the antireflective coatings over the visible spectrum for both fundamental polarizations. Angle and polarized resolved optical measurements report a light reflection remaining under 5% when averaged in the visible spectrum for both polarizations in a wide angular range. Light reflection remains almost insensitive to the light polarization even in oblique incidence. PMID:27109643

A Plasmonic based Ultracompact Polarization Beam Splitter on Silicon-on-Insulator Waveguides

PubMed Central

Tan, Qilong; Huang, Xuguang; Zhou, Wen; Yang, Kun

2013-01-01

An ultracompact polarization beam splitter (PBS) is designed on silicon-on-insulator (SOI) platform based on the localized surface plasmons (LSPs) excited by particular polarization light. The device uses nanoscale silver cylinders as the polarization selection between two silicon waveguides of a directional coupler. The transverse-magnetic (TM) polarization light excites localized surface plasmons and is coupled into the cross port of the directional coupler with a low insert loss, while the transverse-electric (TE) polarization light is under restriction. The PBS has a coupling layer with 50 nm width and 1.1 μm length supporting broadband operation. The simulation calculations show that 22.06dB and 23.06dB of extinction ratios for the TE and TM polarizations were obtained, together with insertion losses of 0.09dB and 0.40dB. PMID:23856635

Sub-50-nm self-assembled nanotextures for enhanced broadband antireflection in silicon solar cells.

PubMed

Rahman, Atikur; Ashraf, Ahsan; Xin, Huolin; Tong, Xiao; Sutter, Peter; Eisaman, Matthew D; Black, Charles T

2015-01-21

Materials providing broadband light antireflection have applications as highly transparent window coatings, military camouflage, and coatings for efficiently coupling light into solar cells and out of light-emitting diodes. In this work, densely packed silicon nanotextures with feature sizes smaller than 50 nm enhance the broadband antireflection compared with that predicted by their geometry alone. A significant fraction of the nanotexture volume comprises a surface layer whose optical properties differ substantially from those of the bulk, providing the key to improved performance. The nanotexture reflectivity is quantitatively well-modelled after accounting for both its profile and changes in refractive index at the surface. We employ block copolymer self-assembly for precise and tunable nanotexture design in the range of ~10-70 nm across macroscopic solar cell areas. Implementing this efficient antireflection approach in crystalline silicon solar cells significantly betters the performance gain compared with an optimized, planar antireflection coating.

Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

PubMed

Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

2010-03-29

Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

Formation and characterization of ZnS/CdS nanocomposite materials into porous silicon

NASA Astrophysics Data System (ADS)

Xue, Tao; Lv, Xiao-yi; Jia, Zhen-hong; Hou, Jun-wei; Jian, Ji-kang

2008-11-01

ZnS/CdS were deposited by chemical vapor deposition (CVD) technique on porous silicon substrates formed by electrochemical anodization of n-type (100) silicon wafer. The optical properties of ZnS/CdS porous silicon composite materials are studied. The results showed that new luminescence characteristics such as strong and stable visible-light emissions with different colors were observed from the ZnS/CdS-PS nanocomposite materials at room temperature.

Hybrid III-V/silicon lasers

NASA Astrophysics Data System (ADS)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Investigations into B-O defect formation-dissociation in CZ-silicon and their effect on solar cell performance

NASA Astrophysics Data System (ADS)

Basnyat, Prakash M.

About 30% of the total market share of industrial manufacture of silicon solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The efficiency of solar cells fabricated on boron-doped Czochralski silicon degrades due to the formation of metastable defects when excess electrons are created by illumination or minority carrier injection during forward bias. The recombination path can be removed by annealing the cell at about 200° C but recombination returns on exposure to light. Several mono-crystalline and multi-crystalline solar cells have been characterized by methods such as laser beam induced current (LBIC), Four-Probe electrical resistivity etc. to better understand the light induced degradation (LID) effect in silicon solar cells. All the measurements are performed as a function of light soaking time. Annealed states are produced by exposing the cells/wafer to temperature above 200° C for 30 minutes and light soaked state was produced by exposure to 1000 W/m2 light using AM1.5 solar simulator for 72 hours. Dark I-V data are analyzed by a software developed at NREL. This study shows that LID, typically, has two components- a bulk component that arises from boron-oxygen defects and a surface component that appears to be due to the SiNx:H-Si interface. With the analysis of dark saturation current (J02), it is seen that the surface LID increases with an increase in the q/2kT component. Results show that cell performance due to bulk effect is fully recovered upon annealing where as surface LID does not recover fully. This statement is also verified by the study of mc- silicon solar cells. Multi-crystalline silicon solar cell has very low oxygen content and, therefore, recombination sites will not be able to form. This shows that there is no bulk degradation in mc- Si solar cells but they exhibit surface degradation. The results suggest that a typical Cz-silicon solar cell with an initial efficiency of ˜18% could suffer a reduction in efficiency to ˜ 17.5% after the formation of a metastable defect, out of which ˜ 0.4% comes from a bulk effect and ˜0.1% is linked to a surface effect.

Optothermal response of a single silicon nanotip

NASA Astrophysics Data System (ADS)

Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

2018-02-01

The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

PubMed

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

Silicon detectors for combined MR-PET and MR-SPECT imaging

NASA Astrophysics Data System (ADS)

Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

2013-02-01

Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.

Self-sensing E-glass-fiber-reinforced composites

NASA Astrophysics Data System (ADS)

Brooks, David; Hayes, Simon A.; Khan, N. A.; Zolfaghar, K.; Fernando, Gerard F.

1997-06-01

Conventional E-glass fibers were surface treated to enable them to act as light guides for short distances. The reinforcing fiber light guides were embedded in glass fiber reinforced epoxy prepregs and processed into composites. The resultant composite was termed the self-sensing composite as any damage to these fibers or its interface would result in the attenuation of the transmitted light. Epoxy, silicone, fluoropolymer and sol-gel derived cladding materials were evaluated as potential cladding materials. RFLGs with a silicone coating was found to give the best light transmission. The self-sensing fibers were capable of detecting a 0.5 J direct impact. The feasibility of using the RFLGs for impact damage location was also demonstrated successfully as bleeding-light could be seen in the vicinity of the impact.

High-density regular arrays of nanometer-scale rods formed on silicon surfaces via femtosecond laser irradiation in water.

PubMed

Shen, Mengyan; Carey, James E; Crouch, Catherine H; Kandyla, Maria; Stone, Howard A; Mazur, Eric

2008-07-01

We report on the formation of high-density regular arrays of nanometer-scale rods using femtosecond laser irradiation of a silicon surface immersed in water. The resulting surface exhibits both micrometer-scale and nanometer-scale structures. The micrometer-scale structure consists of spikes of 5-10 mum width, which are entirely covered by nanometer-scale rods that are roughly 50 nm wide and normal to the surface of the micrometer-scale spikes. The formation of the nanometer-scale rods involves several processes: refraction of laser light in highly excited silicon, interference of scattered and refracted light, rapid cooling in water, roughness-enhanced optical absorptance, and capillary instabilities.

Nonclassical light sources for silicon photonics

NASA Astrophysics Data System (ADS)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Real-space measurement of potential distribution in PECVD ONO electrets by Kelvin probe force microscopy.

PubMed

Emmerich, F; Thielemann, C

2016-05-20

Multilayers of silicon oxide/silicon nitride/silicon oxide (ONO) are known for their good electret properties due to deep energy traps near the material interfaces, facilitating charge storage. However, measurement of the space charge distribution in such multilayers is a challenge for conventional methods if layer thickness dimensions shrink below 1 μm. In this paper, we propose an atomic force microscope based method to determine charge distributions in ONO layers with spatial resolution below 100 nm. By applying Kelvin probe force microscopy (KPFM) on freshly cleaved, corona-charged multilayers, the surface potential is measured directly along the z-axis and across the interfaces. This new method gives insights into charge distribution and charge movement in inorganic electrets with a high spatial resolution.

Porous Silicon as Antireflecting Layer

NASA Astrophysics Data System (ADS)

Kosoglu, Gulsen; Yumak, Mehmet; Okmen, Selim; Ozatay, Ozhan; Skarlatos, Yani; Garcia, Carlos

2013-03-01

The main aim in photovoltaic industry is to produce efficient and energy competitive solar cell modules at low cost. Efficient AntiReflection Coatings (ARC) improve light collection and thereby increase the current output of solar cells. Broadband ARCs are desirable for efficient application over the entire solar spectrum and porous silicon layers as antireflective coating layers provide successful light collection. In the study the most critical physical parameters of porous silicon are examined, homogeneous and uniform porous layers are produced. The photoluminescence spectrum and optical parameters of porous layers have been investigated, and we are now in the process of improving the efficiency of the device by modulating the structure of the porous silicon layers and studying its photovoltaic characteristics. We would like to thank to Mr. Aziz U. Caliskan and his group for their valuable support from TUBITAK YITAL. This Project is supported by Bogazici University Research Funding: 5782, TUBITAK Grant : 209T099, and Bogazici University Infrared Funding: 6121.

Pyrolytic carbon coated black silicon

NASA Astrophysics Data System (ADS)

Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

2016-05-01

Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm.

Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics.

PubMed

Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K

2015-12-02

Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

2015-08-01

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1997-01-01

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

PubMed

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

The Optical Emission and Absorption Properties of Silicon-Germanium Superlattice Structures Grown on Non-Conventional Silicon Substrate Orientation

DTIC Science & Technology

1994-08-01

evidence needed to someday design and build a silicon- based infrared detector that can efficiently detect light at normal incidence. I chose to...detector a. spectral response b. dark current c. qutiantuam efficiency MAKE DEVICE Figure 1. A simple schematic diagram describing a basic materials... based . If we can extend the capabilities of silicon into the near infrared (iR), the nation would be well- positioned to exploit our advantage in this

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

PubMed

Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

2014-12-14

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

Silicon Based Colloidal Quantum Dot and Nanotube Lasers

DTIC Science & Technology

2013-03-01

carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal

Wavelength dispersion characteristics of integrated silicon avalanche LEDs: potential applications in futuristic on-chip micro- and nano-biosensors

NASA Astrophysics Data System (ADS)

Okhai, Timothy A.; Snyman, Lukas W.; Polleux, Jean-Luc

2016-02-01

Si Av LEDs are easily integrated in on-chip integrated circuitry. They have high modulation frequencies into the GHz range and can be fabricated to sub-micron dimensions. Due to subsurface light generation in the silicon device itself, and the high refractive index differences between silicon and the device environment, the exiting light radiation has interesting dispersion characteristics. Three junction micro p+-np+ Silicon Avalanche based Light Emitting Devices (Si Av LEDs) have been analyzed in terms of dispersion characteristics, generally resulting in different wavelengths of light (colors) being emitted at different angles and solid angles from the surfaces of these devices. The emission wavelength is in the 450 - 850 nm range. The devices are of micron dimension and operate at 8 - 10V, 1μA - 2mA. The emission spot sizes are about 1 micron square. Emission intensities are up to 500 nW.μm-2. The observed dispersion characteristics range from 0.05 degrees per nm per degree at emission angle of 5 degrees, to 0.15 degrees per nm at emission angles of 30 degrees. It is believed that the dispersion characteristics can find interesting and futuristic on-chip electro-optic applications involving particularly a ranging from on chip micro optical wavelength dispersers, communication de-multiplexers, and novel bio-sensor applications. All of these could penetrate into the nanoscale dimensions.

Ultra-short silicon MMI duplexer

NASA Astrophysics Data System (ADS)

Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

2012-11-01

The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

Effect of light aging on silicone-resin bond strength in maxillofacial prostheses.

PubMed

Polyzois, Gregory; Pantopoulos, Antonis; Papadopoulos, Triantafillos; Hatamleh, Muhanad

2015-04-01

The aim of this study was to investigate the effect of accelerated light aging on bond strength of a silicone elastomer to three types of denture resin. A total of 60 single lap joint specimens were fabricated with auto-, heat-, and photopolymerized (n = 20) resins. An addition-type silicone elastomer (Episil-E) was bonded to resins treated with the same primer (A330-G). Thirty specimens served as controls and were tested after 24 hours, and the remaining were aged under accelerated exposure to daylight for 546 hours (irradiance 765 W/m(2) ). Lap shear joint tests were performed to evaluate bond strength at 50 mm/min crosshead speed. Two-way ANOVA and Tukey's test were carried out to detect statistical significance (p < 0.05). ANOVA showed that the main effect of light aging was the most important factor determining the shear bond strength. The mean bond strength values ranged from 0.096 to 0.136 MPa. The highest values were recorded for auto- (0.131 MPa) and photopolymerized (0.136 MPa) resins after aging. Accelerated light aging for 546 hours affects the bond strength of an addition-type silicone elastomer to three different denture resins. The bond strength significantly increased after aging for photo- and autopolymerized resins. All the bonds failed adhesively. © 2014 by the American College of Prosthodontists.

Broadband angle-independent antireflection coatings on nanostructured light trapping solar cells

NASA Astrophysics Data System (ADS)

Vázquez-Guardado, Abraham; Boroumand, Javaneh; Franklin, Daniel; Chanda, Debashis

2018-03-01

Backscattering from nanostructured surfaces greatly diminishes the efficacy of light trapping solar cells. While the analytical design of broadband, angle-independent antireflection coatings on nanostructured surfaces proved inefficient, numerical optimization proves a viable alternative. Here, we numerically design and experimentally verify the performance of single and bilayer antireflection coatings on a 2D hexagonal diffractive light trapping pattern on crystalline silicon substrates. Three well-known antireflection coatings, aluminum oxide, silicon nitride, and silicon oxide, which also double as high-quality surface passivation materials, are studied in the 400-1000 nm band. By varying thickness and conformity, the optimal parameters that minimize the broadband total reflectance (specular and scattering) from the nanostructured surface are obtained. The design results in a single-layer antireflection coating with normal-angle wavelength-integrated reflectance below 4% and a bilayer antireflection coating demonstrating reflection down to 1.5%. We show experimentally an angle-averaged reflectance of ˜5.2 % up to 60° incident angle from the optimized bilayer antireflection-coated nanostructured surface, paving the path toward practical implementation of the light trapping solar cells.

Multiscale transparent electrode architecture for efficient light management and carrier collection in solar cells.

PubMed

Boccard, Mathieu; Battaglia, Corsin; Hänni, Simon; Söderström, Karin; Escarré, Jordi; Nicolay, Sylvain; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe

2012-03-14

The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance. © 2012 American Chemical Society

Nonlinear Silicon Photonics: Extending Platforms, Control, and Applications

NASA Astrophysics Data System (ADS)

Miller, Steven Andrew

Silicon photonics is a revolutionary technology that enables the control of light inside a silicon chip and holds promise to impact many applications from data center optical interconnects to optical sensing and even quantum optics. The tight confinement of light inside these chips greatly enhances light-matter interactions, making this an ideal platform for nonlinear photonics. Recently, microresonator-based Kerr frequency comb generation has become a prevalent emerging field, enabling the generation of a broadband optical pulse train by inputting a low-power continuous-wave laser into a low-loss chip-scale micro-cavity. These chip-scale combs have a wide variety of applications, including optical clocks, optical spectroscopy, and data communications. Several important applications in biological, chemical and atmospheric areas require combs generated in the visible and mid-infrared wavelength ranges, where there has been far less research and development compared with the near-infrared. Additionally, most platforms widely for combs are passive, limiting the ability to control and optimize the frequency combs. In this dissertation, we set out to address these shortcomings and introduce new tunability as well as wavelength flexibility in order to enable new applications for microresonator frequency combs. The silicon nitride platform for near-infrared combs is generally a passive platform with limited tuning capabilities. We overcome dispersion limitations in the visible range by leveraging the second-order nonlinearity of silicon nitride and demonstrate visible comb lines. We then further investigate the second-order nonlinearity of silicon nitride by measuring the linear electro-optic effect, a potential tuning mechanism. Finally, we introduce thermal tuning onto the silicon nitride platform and demonstrate tuning of the resonance extinction and dispersion of a micro-cavity using a coupled cavity design. We also address the silicon mid-infrared frequency comb platform. The transparency range of the traditional silicon platform prohibits operation beyond 4 mum wavelength. Here we show that a silicon photonics platform can be leveraged for broadband mid-infrared operation without introducing complexity in fabrication. Both an air-clad and fully suspended silicon platform can enable broadband, low-loss propagation and comb generation as high as 6 mum. We demonstrate a high quality factor resonator near 4 mum wavelength, more than an order of magnitude higher than the traditional platform. Finally, we discuss future avenues of research building on the work presented here.

High-pressure melting experiments on Fe-Si alloys and implications for silicon as a light element in the core

NASA Astrophysics Data System (ADS)

Ozawa, Haruka; Hirose, Kei; Yonemitsu, Kyoko; Ohishi, Yasuo

2016-12-01

We carried out melting experiments on Fe-Si alloys to 127 GPa in a laser-heated diamond-anvil cell (DAC). On the basis of textural and chemical characterizations of samples recovered from a DAC, a change in eutectic liquid composition in the Fe-FeSi binary system was examined with increasing pressure. The chemical compositions of coexisting liquid and solid phases were quantitatively determined with field-emission-type electron microprobes. The results demonstrate that silicon content in the eutectic liquid decreases with increasing pressure to less than 1.5 ± 0.1 wt.% Si at 127 GPa. If silicon is a single light element in the core, 4.5 to 12 wt.% Si is required in the outer core in order to account for its density deficit from pure iron. However, such a liquid core, whose composition is on the Si-rich side of the eutectic point, crystallizes less dense solid, CsCl (B2)-type phase at the inner core boundary (ICB). Our data also show that the difference in silicon concentration between coexisting solid and liquid is too small to account for the observed density contrast across the ICB. These indicate that silicon cannot be the sole light element in the core. Previous geochemical and cosmochemical arguments, however, strongly require ∼6 wt.% Si in the core. It is possible that the Earth's core originally included ∼6 wt.% Si but then became depleted in silicon by crystallizing SiO2 or MgSiO3.

Optical detection system for MEMS-type pressure sensor

NASA Astrophysics Data System (ADS)

Sareło, K.; Górecka-Drzazga, A.; Dziuban, J. A.

2015-07-01

In this paper a special optical detection system designed for a MEMS-type (micro-electro-mechanical system) silicon pressure sensor is presented. The main part of the optical system—a detection unit with a perforated membrane—is bonded to the silicon sensor, and placed in a measuring system. An external light source illuminates the membrane of the pressure sensor. Owing to the light reflected from the deflected membrane sensor, the optical pattern consisting of light points is visible, and pressure can be estimated. The optical detection unit (20   ×   20   ×   20.4 mm3) is fabricated using microengineering techniques. Its dimensions are adjusted to the dimensions of the pressure sensor (5   ×   5 mm2 silicon membrane). Preliminary tests of the optical detection unit integrated with the silicon pressure sensor are carried out. For the membrane sensor from 15 to 60 µm thick, a repeatable detection of the differential pressure in the range of 0 to 280 kPa is achieved. The presented optical microsystem is especially suitable for the pressure measurements in a high radiation environment.

On-chip remote charger model using plasmonic island circuit

NASA Astrophysics Data System (ADS)

Ali, J.; Youplao, P.; Pornsuwancharoen, N.; Aziz, M. S.; Chiangga, S.; Amiri, I. S.; Punthawanunt, S.; Singh, G.; Yupapin, P.

2018-06-01

We propose the remote charger model using the light fidelity (LiFi) transmission and integrate microring resonator circuit. It consists of the stacked layers of silicon-graphene-gold materials known as a plasmonic island placed at the center of the modified add-drop filter. The input light power from the remote LiFi can enter into the island via a silicon waveguide. The optimized input power is obtained by the coupled micro-lens on the silicon surface. The induced electron mobility generated in the gold layer by the interfacing layer between silicon-graphene. This is the reversed interaction of the whispering gallery mode light power of the microring system, in which the generated power is fed back into the microring circuit. The electron mobility is the required output and obtained at the device ports and characterized for the remote current source applications. The obtained calculation results have shown that the output current of ∼2.5 × 10-11 AW-1, with the gold height of 1.0 μm and the input power of 5.0 W is obtained at the output port, which is shown the potential application for a short range free pace remote charger.

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Experimental investigations of quantum confined silicon nanoparticle light emitting devices

NASA Astrophysics Data System (ADS)

Ligman, Rebekah Kristine

2007-12-01

As the demands on our world's energy resources continue to grow, alternative high efficiency materials such as quantum confined silicon nanoparticles (Si nps) are desirable for their potential low cost application in white light illumination, in optical displays, and in on-chip optical interconnects. Many fabrication and passivation techniques exist that produce Si nps with high photogenerated quantum yield. However, high electrically generated Si np quantum efficiency has eluded our society. Predominantly due to the lack of a stable surface passivation and a device fabrication technique that preserves the Si np optical properties. To amend these deficiencies, the passivation of nonthermal plasma fabricated Si nps with a surface oxide grown under UV exposure was first investigated. Control over the surface oxidized Si np (Si/SiO2) passivation growth was demonstrated and the optical stability of Si/SiO2 nps was suitable for demonstrating Si np electroluminescence (EL). Two approaches for constructing hybrid organic light emitting diode (OLED) devices around nonthermal plasma fabricated Si nps were then investigated. Multilayer devices, composed of a nonthermal plasma fabricated Si np layer embedded within an OLED, were first studied. However, no EL from Si nps was obtained using the multilayer device architecture due to poor control over the Si np film thickness. Single layer polymer(Si/SiO2) hybrid devices, composed of nps randomly dispersed within an extrinsic conductive polymer, were then studied and EL from Si/SiO2 nps was obtained. The hybrid device optical and electrical response was enhanced over the control devices, possibly due to morphology changes induced by the Si/SiO2 nps. The energy transfer (ET) processes in single layer polymer(Si/SiO 2) hybrid devices were then investigated by imposing known spatial separations between the intrinsic conductive polymers and Si/SiO2 nps. No measurable Si/SiO2 np emission was observed from the intrinsic hybrid devices independent of the spatial separation, implying no ET occurs between the intrinsic polymers and Si/SiO2 nps. These results suggest the observed Si/SiO 2 np emission from extrinsic polymer(Si/SiO2) hybrid devices may be produced by direct carrier injection, Forster or Dexter ET mechanisms.

Light, Strong Insulating Tiles

NASA Technical Reports Server (NTRS)

Cordia, E.; Schirle, J.

1987-01-01

Improved lightweight insulating silica/aluminum borosilicate/silicon carbide tiles combine increased tensile strength with low thermal conductivity. Changes in composition substantially improve heat-insulating properties of silica-based refractory tile. Silicon carbide particles act as high-emissivity radiation scatterers in tile material.

TES-Based Light Detectors for the CRESST Direct Dark Matter Search

NASA Astrophysics Data System (ADS)

Rothe, J.; Angloher, G.; Bauer, P.; Bento, A.; Bucci, C.; Canonica, L.; D'Addabbo, A.; Defay, X.; Erb, A.; Feilitzsch, F. v.; Ferreiro Iachellini, N.; Gorla, P.; Gütlein, A.; Hauff, D.; Jochum, J.; Kiefer, M.; Kluck, H.; Kraus, H.; Lanfranchi, J.-C.; Langenkämper, A.; Loebell, J.; Mancuso, M.; Mondragon, E.; Münster, A.; Pagliarone, C.; Petricca, F.; Potzel, W.; Pröbst, F.; Puig, R.; Reindl, F.; Schäffner, K.; Schieck, J.; Schipperges, V.; Schönert, S.; Seidel, W.; Stahlberg, M.; Stodolsky, L.; Strandhagen, C.; Strauss, R.; Tanzke, A.; Trinh Thi, H. H.; Türkoğlu, C.; Ulrich, A.; Usherov, I.; Wawoczny, S.; Willers, M.; Wüstrich, M.

2018-05-01

The CRESST experiment uses cryogenic detectors based on transition-edge sensors to search for dark matter interactions. Each detector module consists of a scintillating CaWO_4 crystal and a silicon-on-sapphire (SOS) light detector which operate in coincidence (phonon-light technique). The 40-mm-diameter SOS disks (2 g mass) used in the data taking campaign of CRESST-II Phase 2 (2014-2016) reached absolute baseline resolutions of σ = 4-7 eV. This is the best performance reported for cryogenic light detectors of this size. Newly developed silicon beaker light detectors (4 cm height, 4 cm diameter, 6 g mass), which cover a large fraction of the target crystal surface, have achieved a baseline resolution of σ = 5.8 eV. First results of further improved light detectors developed for the ongoing low-threshold CRESST-III experiment are presented.

Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugimoto, Hiroshi; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501; Zhang, Ran

2015-07-27

We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensingmore » and imaging.« less

Nonspecular reflection of light at an inhomogeneous interface between two media and in a nanostructured layer with a quasi-zero refractive index

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gadomsky, O. N., E-mail: gadomsky@mail.ru; Gadomskaya, I. V.

2015-02-15

We have derived formulas for the amplitudes of light reflection and refraction at an inhomogeneous interface between two media and in a nanostructured layer with a quasi-zero refractive index. These formulas are applied to explain the experimental spectra of nonspecular light reflection using a nanostructured (PMMA + Ag) layer with silver nanoparticles on a silicon surface as an example. We show that a surface wave is formed in the nanostructured layer at various angles of light incidence and the layer with a quasi-zero refractive index is an antireflection coating that provides uniform 5% silicon antireflection in the wavelength range frommore » 450 to 1000 nm.« less

Controllable Change of Photoluminescence Spectra of Silicone Rubber Modified by 193 nm ArF Excimer Laser

NASA Astrophysics Data System (ADS)

Okoshi, Masayuki; Iyono, Minako; Inoue, Narumi

2009-12-01

Photoluminescence spectra of silicone rubber ([SiO(CH3)2]n) photochemically modified by a 193 nm ArF excimer laser was found to be controllable. Compared with the modification in air, the photoluminescence spectra could be blueshifted by the modification in vacuum or the additional irradiation of ArF excimer laser in vacuum after the modification in air. To redshift, on the other hand, the additional irradiation of a 157 nm F2 laser in air after the modification in air, the modification in oxygen gas, or the postannealing after the modification in oxygen gas was effective. The blue and redshifts of the photoluminescence were essentially due to the acceleration of reduction and oxidation reactions of silicone rubber, respectively, because the photoluminescence derives its origin from oxygen deficiency centers and peroxy centers of the silica structure in the modified silicone rubber. On the basis of the spectra changes, colorful light-guiding sheets made of silicone rubber under illumination of a 375 nm light-emitting diode were successfully fabricated for cellular phone use.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

PubMed Central

Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos

2018-01-01

Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267

Periodic molybdenum disc array for light trapping in amorphous silicon layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiwei; Deng, Changkai; Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under lightmore » illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.« less

Calculation comparison of an additive and subtractive light modulator for high-resolution pixellight headlamps

NASA Astrophysics Data System (ADS)

Held, Marcel Philipp; Ley, Peer-Phillip; Lachmayer, Roland

2018-02-01

High-resolution vehicle headlamps represent a future-oriented technology that increases traffic safety and driving comfort in the dark. A further development to current matrix beam headlamps are LED-based pixellight systems which enable additional lighting functions (e.g. the projection of navigation information on the road) to be activated for given driving scenarios. The image generation is based on spatial light modulators (SLM) such as digital micromirror devices (DMD), liquid crystal displays (LCD), liquid crystal on silicon (LCoS) devices or LED arrays. For DMD-, LCD- and LCoSbased headlamps, the optical system uses illumining optics to ensure a precise illumination of the corresponding SLM. LED arrays, however, have to use imaging optics to project the LED die onto an intermediate image plane and thus create the light distribution via an apposition of gapless juxtapositional LED die images. Nevertheless, the lambertian radiation characteristics complex the design of imaging optics regarding a highefficiency setup with maximum resolution and luminous flux. Simplifying the light source model and its emitting characteristics allows to determine a balanced setup between these parameters by using the Etendue and to ´ calculate the maximum possible efficacy and luminous flux for each technology in an early designing stage. Therefore, we present a calculation comparison of how simplifying the light source model can affect the Etendue ´ conservation and the setup design for two high-resolution technologies. The shown approach is evaluated and compared to simulation models to show the occurring deviation and its applicability.

Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

NASA Astrophysics Data System (ADS)

Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

2017-11-01

Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities

NASA Astrophysics Data System (ADS)

Haase, Felix; Kiefer, Fabian; Schäfer, Sören; Kruse, Christian; Krügener, Jan; Brendel, Rolf; Peibst, Robby

2017-08-01

We demonstrate an independently confirmed 25.0%-efficient interdigitated back contact silicon solar cell with passivating polycrystalline silicon (poly-Si) on oxide (POLO) contacts that enable a high open circuit voltage of 723 mV. We use n-type POLO contacts with a measured saturation current density of J 0n = 4 fA cm-2 and p-type POLO contacts with J 0p = 10 fA cm-2. The textured front side and the gaps between the POLO contacts on the rear are passivated by aluminum oxide (AlO x ) with J 0AlO x = 6 fA cm-2 as measured after deposition. We analyze the recombination characteristics of our solar cells at different process steps using spatially resolved injection-dependent carrier lifetimes measured by infrared lifetime mapping. The implied pseudo-efficiency of the unmasked cell, i.e., cell and perimeter region are illuminated during measurement, is 26.2% before contact opening, 26.0% after contact opening and 25.7% for the finished cell. This reduction is due to an increase in the saturation current density of the AlO x passivation during chemical etching of the contact openings and of the rear side metallization. The difference between the implied pseudo-efficiency and the actual efficiency of 25.0% as determined by designated-area light current-voltage (I-V) measurements is due to series resistance and diffusion of excess carriers into the non-illuminated perimeter region.

Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

DOEpatents

Vertes, Akos; Walker, Bennett N.

2013-09-10

The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

DOEpatents

Vertes, Akos; Walker, Bennett N

2015-04-07

The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

DOEpatents

Vertes, Akos [Reston, VA; Walker, Bennett N [Washington, DC

2012-02-07

The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector

NASA Astrophysics Data System (ADS)

Ren, Rui; Zhong, Zheng

2018-06-01

This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

NASA Technical Reports Server (NTRS)

Ho, C. T.; Mathias, J. D.

1981-01-01

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

NASA Astrophysics Data System (ADS)

Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

2018-06-01

A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Application Of Optical Processing For Growth Of Silicon Dioxide

DOEpatents

Sopori, Bhushan L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy

NASA Technical Reports Server (NTRS)

2006-01-01

A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.

Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

PubMed Central

Scholvin, Jörg; Kinney, Justin P.; Bernstein, Jacob G.; Moore-Kochlacs, Caroline; Kopell, Nancy; Fonstad, Clifton G.; Boyden, Edward S.

2015-01-01

Objective Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are close-packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes, to enable spatially oversampled recording of neural activity in a scalable fashion. Methods Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance Finally, we perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites. PMID:26699649

Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

NASA Astrophysics Data System (ADS)

Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

2016-11-01

Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Hassan, Karim; Ferrotti, Thomas; Harduin, Julie; Duprez, Hélène; Menezo, Sylvie; Ben Bakir, Badhise

2015-02-01

In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices ng ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.

Demonstration of polarization-insensitive spatial light modulation using a single polarization-sensitive spatial light modulator.

PubMed

Liu, Jun; Wang, Jian

2015-07-06

We present a simple configuration incorporating a single polarization-sensitive phase-only liquid crystal spatial light modulator (LC-SLM) to facilitate polarization-insensitive spatial light modulation. The polarization-insensitive configuration is formed by a polarization beam splitter (PBS), a polarization-sensitive phase-only LC-SLM, a half-wave plate (HWP), and a mirror in a loop structure. We experimentally demonstrate polarization-insensitive spatial light modulations for incident linearly polarized beams with different polarization states and polarization-multiplexed beams. Polarization-insensitive spatial light modulations generating orbital angular momentum (OAM) beams are demonstrated in the experiment. The designed polarization-insensitive configuration may find promising applications in spatial light modulations accommodating diverse incident polarizations.

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

NASA Astrophysics Data System (ADS)

Sánchez, L. A.; Moretón, A.; Guada, M.; Rodríguez-Conde, S.; Martínez, O.; González, M. A.; Jiménez, J.

2018-05-01

Today's photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical-grade Si solar cells are studied using these two techniques.

Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells.

PubMed

Ram, Sanjay K; Desta, Derese; Rizzoli, Rita; Bellettato, Michele; Lyckegaard, Folmer; Jensen, Pia B; Jeppesen, Bjarke R; Chevallier, Jacques; Summonte, Caterina; Larsen, Arne Nylandsted; Balling, Peter

2017-06-01

Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

Silicon Mie resonators for highly directional light emission from monolayer MoS2

NASA Astrophysics Data System (ADS)

Cihan, Ahmet Fatih; Curto, Alberto G.; Raza, Søren; Kik, Pieter G.; Brongersma, Mark L.

2018-05-01

Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.

1×3 optical drop splitter in a rod-type silicon photonic crystal

NASA Astrophysics Data System (ADS)

Zhuang, Dongxia; Chen, Xiyao; Li, Junjun; Lin, Guimin; Qiang, Zexuan; Qiu, Yishen; Li, Hui

2011-12-01

We report an 1×3 optical drop splitter (ODS) based on a self-collimation ring resonator (SCRR) in a rod-type silicon photonic crystal. The proposed 1×3 ODS consists of four beam splitters which are formed by changing the radius of one row of silicon rods. When the self-collimated light with resonance frequency is launched into the ODS, the light beam can be split into three parts come out from three drop ports while no light coming out from the through port. The splitting ratio of the three drop beams can be controlled by tuning the radii of the beam splitters. The FDTD method is employed to calculate the transmission of the 1×3 ODS. For the drop wavelength of 1550 nm, the free spectral range is 28.7 nm, which almost covers the whole optical communication C-band window. This 1×3 ODS may have applications in photonic integrated circuits.

Effect of light elements on the sound velocities in solid iron: Implications for the composition of Earth's core

NASA Astrophysics Data System (ADS)

Badro, James; Fiquet, Guillaume; Guyot, François; Gregoryanz, Eugene; Occelli, Florent; Antonangeli, Daniele; d'Astuto, Matteo

2007-02-01

We measured compressional sound velocities in light element alloys of iron (FeO, FeSi, FeS, and FeS2) at high-pressure by inelastic X-ray scattering. This dataset provides new mineralogical constraints on the composition of Earth's core, and completes the previous sets formed by the pressure-density systematics for these compounds. Based on the combination of these datasets and their comparison with radial seismic models, we propose an average composition model of the Earth's core. We show that the incorporation of small amounts of silicon or oxygen is compatible with geophysical observations and geochemical abundances. The effect of nickel on the calculated light element contents is shown to be negligible. The preferred core model derived from our measurements is an inner core which contains 2.3 wt.% silicon and traces of oxygen, and an outer core containing 2.8 wt.% silicon and around 5.3 wt.% oxygen.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

PubMed Central

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, Suoyuan; School of Chemical Engineering and Materials, Dalian Polytechnic University, Dalian 116034; Tsang, Chi Him A.

Graphical abstract: H-SiNWs can catalyze hydroxylation of benzene and degradation of methyl red under visible light irradiation. Highlights: Black-Right-Pointing-Pointer Hydrogen-terminated silicon nanowires were active photocatalyst in the hydroxylation of benzene under light. Black-Right-Pointing-Pointer Hydrogen-terminated silicon nanowires were also effective in the decomposition of methyl red dye. Black-Right-Pointing-Pointer The Si/SiO{sub x} core-shell structure is the main reason of the obtained high selectivity during the hydroxylation. -- Abstract: Hydrogen-terminated silicon nanowires (H-SiNWs) were used as heterogeneous photocatalysts for the hydroxylation of benzene and for the decomposition of methyl red under visible light irradiation. The above reactions were monitored by GC-MS and UV-Vismore » spectrophotometry, respectively, which shows 100% selectivity for the transformation of benzene to phenol. A complete decomposition of a 2 Multiplication-Sign 10{sup -4} M methyl red solution was achieved within 30 min. The high selectivity for the hydroxylation of benzene and the photodecomposition demonstrate the catalytic activity of ultrafine H-SiNWs during nanocatalysis.« less

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

DOE PAGES

Geissbühler, Jonas; Werner, Jérémie; Nicolas, Silvia Martin de; ...

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. Furthermore, we circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Optical designs for improved solar cell performance

NASA Astrophysics Data System (ADS)

Kosten, Emily Dell

The solar resource is the most abundant renewable resource on earth, yet it is currently exploited with relatively low efficiencies. To make solar energy more affordable, we can either reduce the cost of the cell or increase the efficiency with a similar cost cell. In this thesis, we consider several different optical approaches to achieve these goals. First, we consider a ray optical model for light trapping in silicon microwires. With this approach, much less material can be used, allowing for a cost savings. We next focus on reducing the escape of radiatively emitted and scattered light from the solar cell. With this angle restriction approach, light can only enter and escape the cell near normal incidence, allowing for thinner cells and higher efficiencies. In Auger-limited GaAs, we find that efficiencies greater than 38% may be achievable, a significant improvement over the current world record. To experimentally validate these results, we use a Bragg stack to restrict the angles of emitted light. Our measurements show an increase in voltage and a decrease in dark current, as less radiatively emitted light escapes. While the results in GaAs are interesting as a proof of concept, GaAs solar cells are not currently made on the production scale for terrestrial photovoltaic applications. We therefore explore the application of angle restriction to silicon solar cells. While our calculations show that Auger-limited cells give efficiency increases of up to 3% absolute, we also find that current amorphous silicion-crystalline silicon heterojunction with intrinsic thin layer (HIT) cells give significant efficiency gains with angle restriction of up to 1% absolute. Thus, angle restriction has the potential for unprecedented one sun efficiencies in GaAs, but also may be applicable to current silicon solar cell technology. Finally, we consider spectrum splitting, where optics direct light in different wavelength bands to solar cells with band gaps tuned to those wavelengths. This approach has the potential for very high efficiencies, and excellent annual power production. Using a light-trapping filtered concentrator approach, we design filter elements and find an optimal design. Thus, this thesis explores silicon microwires, angle restriction, and spectral splitting as different optical approaches for improving the cost and efficiency of solar cells.

Removing Chlorides From Metallurgical-Grade Silicon

NASA Technical Reports Server (NTRS)

Breneman, W. C.; Coleman, L. M.

1982-01-01

Process for making low-cost silicon for solar cells is further improved. Silane product recycled to feed stripper column converts some of heavy impurities to volatile ones that pass off at top of column with light wastes. Impurities--chlorides of arsenic, phosphorus, and boron-would otherwise be carried to subsequent distillations where they would be difficult to remove. Since only a small amount of silane is recycled, silicon production efficiency remains high.

International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon

DTIC Science & Technology

1994-04-01

matrix elements, quantum confinement, surface effects ? CHARLOTFE STANDARD R. Tsu Comparison of Luminescence Efficiency ROLE OF NANOSCALE Si-DEVICES...confinement effects in microcrystalline silicon [2,3] may lead to revolutionary advances in speed and dramatically reduced energy consumption of silicon...Formation: A Quantum Wire Effect ," Avpl. Phys. Lett., 58, 856 (1991). 5. R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and Photoluminescence

Digital pulse-shape analysis with a TRACE early silicon prototype

NASA Astrophysics Data System (ADS)

Mengoni, D.; Dueñas, J. A.; Assié, M.; Boiano, C.; John, P. R.; Aliaga, R. J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzáles, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V. V.; Perez-Vidal, R.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente Dobón, J. J.

2014-11-01

A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 μm thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.

Hybrid integration of carbon nanotubes in silicon photonic structures

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

On the role of spatial position of bridged oxygen atoms as surface passivants on the ground-state gap and photo-absorption spectrum of silicon nano-crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazemi, Sanaz; Soleimani, Ebrahim Asl; Pourfath, Mahdi, E-mail: pourfath@ut.ac.ir, E-mail: pourfath@iue.tuwien.ac.at

2015-11-28

Silicon nano-crystals (NCs) are potential candidates for enhancing and tuning optical properties of silicon for optoelectronic and photo-voltaic applications. Due to the high surface-to-volume ratio, however, optical properties of NC result from the interplay of quantum confinement and surface effects. In this work, we show that both the spatial position of surface terminants and their relative positions have strong effects on NC properties as well. This is accomplished by investigating the ground-state HOMO-LUMO band-gap, the photo-absorption spectra, and the localization and overlap of HOMO and LUMO orbital densities for prototype ∼1.2 nm Si{sub 32–x}H{sub 42–2x}O{sub x} hydrogenated silicon NC with bridgedmore » oxygen atoms as surface terminations. It is demonstrated that the surface passivation geometry significantly alters the localization center and thus the overlap of frontier molecular orbitals, which correspondingly modifies the electronic and optical properties of NC.« less

Liquid Crystal on Silicon Wavefront Corrector

NASA Technical Reports Server (NTRS)

Pouch, John; Miranda, Felix; Wang, Xinghua; Bos, Philip, J.

2004-01-01

A low cost, high resolution, liquid crystal on silicon, spatial light modulator has been developed for the correction of huge aberrations in an optical system where the polarization dependence and the chromatic nature are tolerated. However, the overall system performance suggests that this device is also suitable for real time correction of aberration in human eyes. This device has a resolution of 1024 x 768, and is driven by an XGA display driver. The effective stroke length of the device is 700 nm and 2000 nm for the visible and IR regions of the device, respectively. The response speeds are 50 Hz and 5 Hz, respectively, which are fast enough for real time adaptive optics for aberrations in human eyes. By modulating a wavefront of 2 pi, this device can correct for arbitrary high order wavefront aberrations since the 2-D pixel array is independently controlled by the driver. The high resolution and high accuracy of the device allow for diffraction limited correction of the tip and tilt or defocus without an additional correction loop. We have shown that for every wave of aberration, an 8 step blazed grating is required to achieve high diffraction efficiency around 80%. In light of this, up to 125 waves peak to valley of tip and tilt can be corrected if we choose the simplest aberration. Corrections of 34 waves of aberration, including high order Zernicke terms in a high magnification telescope, to diffraction limited performance (residual wavefront aberration less than 1/30 lambda at 632.8 nm) have been observed at high efficiency.

A compact integrated device for spatially selective optogenetic neural stimulation based on the Utah Optrode Array

NASA Astrophysics Data System (ADS)

Scharf, Robert; Reiche, Christopher F.; McAlinden, Niall; Cheng, Yunzhou; Xie, Enyuan; Sharma, Rohit; Tathireddy, Prashant; Rieth, Loren; Mathieson, Keith; Blair, Steve

2018-02-01

Optogenetics is a powerful tool for neural control, but controlled light delivery beyond the superficial structures of the brain remains a challenge. For this, we have developed an optrode array, which can be used for optogenetic stimulation of the deep layers of the cortex. The device consists of a 10×10 array of penetrating optical waveguides, which are predefined using BOROFLOAT® wafer dicing. A wet etch step is then used to achieve the desired final optrode dimensions, followed by heat treatment to smoothen the edges and the surface. The major challenge that we have addressed is delivering light through individual waveguides in a controlled and efficient fashion. Simply coupling the waveguides in the optrode array to a separately-fabricated μLED array leads to low coupling efficiency and significant light scattering in the optrode backplane and crosstalk to adjacent optrodes due to the large mismatch between the μLED and waveguide numerical aperture and the working distance between them. We mitigate stray light by reducing the thickness of the glass backplane and adding a silicon interposer layer with optical vias connecting the μLEDs to the optrodes. The interposer additionally provides mechanical stability required by very thin backplanes, while restricting the unwanted spread of light. Initial testing of light output from the optrodes confirms intensity levels sufficient for optogenetic neural activation. These results pave the way for future work, which will focus on optimization of light coupling and adding recording electrodes to each optrode shank to create a bidirectional optoelectronic interface.

Demonstration of polarization-insensitive spatial light modulation using a single polarization-sensitive spatial light modulator

PubMed Central

Liu, Jun; Wang, Jian

2015-01-01

We present a simple configuration incorporating a single polarization-sensitive phase-only liquid crystal spatial light modulator (LC-SLM) to facilitate polarization-insensitive spatial light modulation. The polarization-insensitive configuration is formed by a polarization beam splitter (PBS), a polarization-sensitive phase-only LC-SLM, a half-wave plate (HWP), and a mirror in a loop structure. We experimentally demonstrate polarization-insensitive spatial light modulations for incident linearly polarized beams with different polarization states and polarization-multiplexed beams. Polarization-insensitive spatial light modulations generating orbital angular momentum (OAM) beams are demonstrated in the experiment. The designed polarization-insensitive configuration may find promising applications in spatial light modulations accommodating diverse incident polarizations. PMID:26146032

Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector

NASA Astrophysics Data System (ADS)

Cai, Wei; Wang, Wei; Zhu, Bingcheng; Gao, Xumin; Zhu, Guixia; Yuan, Jialei; Wang, Yongjin

2018-01-01

Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

PubMed

Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2011-07-04

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Multiscale Study of Plasmonic Scattering and Light Trapping Effect in Silicon Nanowire Array Solar Cells.

PubMed

Meng, Lingyi; Zhang, Yu; Yam, ChiYung

2017-02-02

Nanometallic structures that support surface plasmons provide new ways to confine light at deep-subwavelength scales. The effect of light scattering in nanowire array solar cells is studied by a multiscale approach combining classical electromagnetic (EM) and quantum mechanical simulations. A photovoltaic device is constructed by integrating a silicon nanowire array with a plasmonic silver nanosphere. The light scatterings by plasmonic element and nanowire array are obtained via classical EM simulations, while current-voltage characteristics and optical properties of the nanowire cells are evaluated quantum mechanically. We found that the power conversion efficiency (PCE) of photovoltaic device is substantially improved due to the local field enhancement of the plasmonic effect and light trapping by the nanowire array. In addition, we showed that there exists an optimal nanowire number density in terms of optical confinement and solar cell PCE.

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Application of optical processing for growth of silicon dioxide

DOEpatents

Sopori, B.L.

1997-06-17

A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities.

PubMed

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F; Machiya, Hidenori; Htoon, Han; Doorn, Stephen K; Kato, Yuichiro K

2018-06-13

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10 7 Hz.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE PAGES

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.; ...

2018-05-21

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

PubMed

Lee, Wook-Jae; Kim, Hyunseok; You, Jong-Bum; Huffaker, Diana L

2017-08-25

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm 2 , which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7 × 7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

Pyrolytic carbon coated black silicon

PubMed Central

Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

2016-01-01

Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

Spatial and Angular Resolution Enhancement of Light Fields Using Convolutional Neural Networks

NASA Astrophysics Data System (ADS)

Gul, M. Shahzeb Khan; Gunturk, Bahadir K.

2018-05-01

Light field imaging extends the traditional photography by capturing both spatial and angular distribution of light, which enables new capabilities, including post-capture refocusing, post-capture aperture control, and depth estimation from a single shot. Micro-lens array (MLA) based light field cameras offer a cost-effective approach to capture light field. A major drawback of MLA based light field cameras is low spatial resolution, which is due to the fact that a single image sensor is shared to capture both spatial and angular information. In this paper, we present a learning based light field enhancement approach. Both spatial and angular resolution of captured light field is enhanced using convolutional neural networks. The proposed method is tested with real light field data captured with a Lytro light field camera, clearly demonstrating spatial and angular resolution improvement.

Spatial and Angular Resolution Enhancement of Light Fields Using Convolutional Neural Networks.

PubMed

Gul, M Shahzeb Khan; Gunturk, Bahadir K

2018-05-01

Light field imaging extends the traditional photography by capturing both spatial and angular distribution of light, which enables new capabilities, including post-capture refocusing, post-capture aperture control, and depth estimation from a single shot. Micro-lens array (MLA) based light field cameras offer a cost-effective approach to capture light field. A major drawback of MLA based light field cameras is low spatial resolution, which is due to the fact that a single image sensor is shared to capture both spatial and angular information. In this paper, we present a learning based light field enhancement approach. Both spatial and angular resolution of captured light field is enhanced using convolutional neural networks. The proposed method is tested with real light field data captured with a Lytro light field camera, clearly demonstrating spatial and angular resolution improvement.

Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

PubMed

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-21

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0.078) ps).

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

NASA Astrophysics Data System (ADS)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0.078) ps).

Comparison of one- and two-photon optical beam-induced current imaging

NASA Astrophysics Data System (ADS)

Xu, Chris; Denk, Winfried

1999-08-01

Optical beam induced current (OBIC) imaging through the backside of integrated circuits was investigated in the wavelength λ region from 1.15 to 1.26 μm. With a subpicosecond excitation source and approximately 1 mW at the sample, the two-photon contribution to the generated photocurrent dominates at λ=1.25 μm but becomes negligible for λ<1.18 μm. One-photon- (1P-) and two-photon- (2P-) OBIC images are very different. In the 1P case a strong contribution by scattered light to the carrier generation leads to an edge enhancement effect that is entirely missing when 2P excitation dominates. 2P-OBIC images often show supply-voltage dependent intensity steps that are much sharper than the optical resolution permits. The advantages of 2P-OBIC lie in the spatial confinement of the free carrier generation, a more relevant contrast mechanism, and the promise of a substantial increase in spatial resolution because of the quadratic intensity dependence and the possibility of using silicon solid immersion lenses, which could eventually provide resolution sufficient for circuits made by deep UV lithography.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Polymer dispensing and embossing technology for the lens type LED packaging

NASA Astrophysics Data System (ADS)

Chien, Chien-Lin Chang; Huang, Yu-Che; Hu, Syue-Fong; Chang, Chung-Min; Yip, Ming-Chuen; Fang, Weileun

2013-06-01

This study presents a ring-type micro-structure design on the substrate and its corresponding micro fabrication processes for a lens-type light-emitting diode (LED) package. The dome-type or crater-type silicone lenses are achieved by a dispensing and embossing process rather than a molding process. Silicone with a high viscosity and thixotropy index is used as the encapsulant material. The ring-type micro structure is adopted to confine the dispensed silicone encapsulant so as to form the packaged lens. With the architecture and process described, this LED package technology herein has three merits: (1) the flexibility of lens-type LED package designs is enhanced; (2) a dome-type package design is used to enhance the intensity; (3) a crater-type package design is used to enhance the view angle. Measurement results show the ratio between the lens height and lens radius can vary from 0.4 to 1 by changing the volume of dispensed silicone. The view angles of dome-type and crater-type packages can reach 155° ± 5° and 175° ± 5°, respectively. As compared with the commercial plastic leaded chip carrier-type package, the luminous flux of a monochromatic blue light LED is improved by 15% by the dome-type package (improved by 7% by the crater-type package) and the luminous flux of a white light LED is improved by 25% by the dome-type package (improved by 13% by the crater-type package). The luminous flux of monochromatic blue light LED and white light LED are respectively improved by 8% and 12% by the dome-type package as compare with the crater-type package.

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Mhamdi, El Mahdi; Holovsky, Jakub; Demaurex, Bénédicte

2014-06-23

Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

PubMed

Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

2016-07-29

Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

NASA Astrophysics Data System (ADS)

Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

2014-03-01

We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

Laser-Raman microprobe identification of inclusions in capsules associated with silicone gel breast implants.

PubMed

Centeno, J A; Mullick, F G; Panos, R G; Miller, F W; Valenzuela-Espinoza, A

1999-07-01

Raman spectroscopy (the analysis of scattered photons after excitation with a monochromatic light source) provides a nondestructive method for identifying organic and inorganic materials on the basis of the molecule's characteristic spectrum of vibrational frequencies. Although the technique has been predominantly applied in sciences other than pathology, the recent advent of high-quality microscope optics coupled to optical Raman spectrometers (a variation known as a Raman microprobe) rendered this technique amenable to applications in human pathology. In the Raman microprobe, a laser beam is focused on a spot approximately 1 microm in diameter on the surface of the sample, e.g., tissue, and the scattered light is collected and analyzed. In this investigation, we used the Raman microprobe for the identification of foreign materials in breast implant capsular tissues. The characteristic silicone group frequencies associated with the silicon-oxygen stretch, the silicone-carbon stretch, the silicon-methyl and the methyl carbon-hydrogen stretch frequencies were used to identify polydimethylsiloxane and to define chemical differences among the various other implant-related inclusions. All of the inclusions were positively identified in a series of 44 capsules from silicone gel-filled implants: polydimethylsiloxane was found in 44 of 44 capsules surrounding silicone gel-filled implants; polyurethane was seen in 4 of 4 capsules around polyurethane foam-coated gel-filled implants; 4 of 4 capsules enveloping Dacron patch gel-filled implants revealed Dacron; and talc was identified in 8 of these 44 capsules. Raman microspectroscopy provides a rapid, accurate, and sensitive method for identifying inclusions associated with silicone and other implant materials in tissue.

Fabrication of thermal microphotonic sensors and sensor arrays

DOEpatents

Shaw, Michael J.; Watts, Michael R.; Nielson, Gregory N.

2010-10-26

A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.

All silicon waveguide spherical microcavity coupler device.

PubMed

Xifré-Pérez, E; Domenech, J D; Fenollosa, R; Muñoz, P; Capmany, J; Meseguer, F

2011-02-14

A coupler based on silicon spherical microcavities coupled to silicon waveguides for telecom wavelengths is presented. The light scattered by the microcavity is detected and analyzed as a function of the wavelength. The transmittance signal through the waveguide is strongly attenuated (up to 25 dB) at wavelengths corresponding to the Mie resonances of the microcavity. The coupling between the microcavity and the waveguide is experimentally demonstrated and theoretically modeled with the help of FDTD calculations.

Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study

NASA Astrophysics Data System (ADS)

Somogyi, Bálint; Zólyomi, Viktor; Gali, Adam

2012-11-01

Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the near-infrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

Enhanced-Adhesion Multi-Walled Carbon Nanotubes on Titanium Substrates for Stray Light Control

NASA Technical Reports Server (NTRS)

Hagopian, John; Getty, Stephanie; Quijada, Manuel

2012-01-01

Carbon nanotubes previously grown on silicon have extremely low reflectance, making them a good candidate for stray light suppression. Silicon, however, is not a good structural material for stray light components such as tubes, stops, and baffles. Titanium is a good structural material and can tolerate the 700 C nanotube growth process. The ability to grow carbon nanotubes on a titanium substrate that are ten times blacker than the current NASA state-of-the-art paints in the visible to near infrared spectra has been achieved. This innovation will allow significant improvement of stray light performance in scientific instruments or any other optical system. This innovation is a refinement of the utilization of multiwalled carbon nano tubes for stray light suppression in spaceflight instruments. The innovation is a process to make the surface darker and improve the adhesion to the substrate, improving robustness for spaceflight use. Bright objects such as clouds or ice scatter light off of instrument structures and components and make it difficult to see dim objects in Earth observations. A darker material to suppress this stray light has multiple benefits to these observations, including enabling scientific observations not currently possible, increasing observational efficiencies in high-contrast scenes, and simplifying instruments and lowering their cost by utilizing fewer stray light components and achieving equivalent performance. The prior art was to use commercially available black paint, which resulted in approximately 4% of the light being reflected (hemispherical reflectance or total integrated scatter, or TIS). Use of multiwalled carbon nanotubes on titanium components such as baffles, entrance aperture, tubes, and stops, can decrease this scattered light by a factor of ten per bounce over the 200-nm to 2,500-nm wavelength range. This can improve system stray light performance by orders of magnitude. The purpose of the innovation is to provide an enhanced stray light control capability by making a blacker surface treatment for typical stray light control components. Since baffles, stops, and tubes used in scientific observations often undergo loads such as vibration, it was critical to develop this surface treatment on structural materials. The innovation is to optimize the carbon nanotube growth for titanium, which is a strong, lightweight structural material suitable for spaceflight use. The titanium substrate carbon nanotubes are more robust than those grown on silicon and allow for easier utilization. They are darker than current surface treatments over larger angles and larger wavelength range. The primary advantage of titanium substrate is that it is a good structural material, and not as brittle as silicon.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Joshua A.; Riddle, Matthew E.; Graziano, Diane J.

2015-08-12

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of siliconmore » carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015–2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2–20 billion GJ depending on market adoption dynamics.« less

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

NASA Astrophysics Data System (ADS)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Study of silicone-based materials for the packaging of optoelectronic devices

NASA Astrophysics Data System (ADS)

Lin, Yeong-Her

The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced degradations, and thus cause reliability issues and shorten the lifetime. A new high performance silicone has been developed and its performance has been compared with other commercial silicone products in the packaging of high power white LEDs. The high performance silicone also has better results than commercial high refractive index silicone and optical grade epoxy under JEDEC reliability standard for moisture sensitivity test. In synthesis of red dye-doped particles by sol-gel method, it is a novel method to get high color rendering index (CRI) LEDs. These red dye-doped particles, with average diameter of 5 mum, can be mixed with liquid encapsulants to form a uniform distribution in polymer matrix. The red dye-doped particles can be excited by phosphor-emitted yellow light instead of blue light from LED chip. Therefore, warm white LEDs with high CRI can be gotten at high lumen efficiency. The second part of this work is silicone elastomer for biomedical applications, especially in making urological implantable devices. A cross-linked, heat curable, addition-reaction silicone material is prepared. The material may be molded or formed into one or more medical devices. One such medical device could be a catheter used in urological applications. The material is a long term indwelling material that resists encrustation like a metal stent, but is more comfortable because it is silicone-based. The material can be made relatively cheaply compared to metal stents. Furthermore, the material is biocompatible with bladder epithelial cells.

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

Ultra-thin, light-trapping silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

1989-01-01

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Shaping the third-harmonic radiation from silicon nanodimers

DOE PAGES

Wang, Lei; Kruk, Sergey; Xu, Lei; ...

2017-01-23

Recent progress in the study of resonant light confinement in high-index dielectric nanostructures suggests a new route for achieving efficient control of both electric and magnetic components of light. It also leads to the enhancement of nonlinear effects near electric and magnetic Mie resonances with an engineered radiation directionality. Furthermore we study the third-harmonic generation from dimers composed of pairs of two identical silicon nanoparticles and demonstrate, both numerically and experimentally, that the multipolar harmonic modes generated by the dimers near the Mie resonances allow the shaping of the directionality of nonlinear radiation.

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

NASA Astrophysics Data System (ADS)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.

Enhancing performance of LCoS-SLM as adaptive optics by using computer-generated holograms modulation software

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Lyu, Bo-Han; Wang, Chen; Hung, Cheng-Chieh

2017-05-01

We have already developed multi-function and easy-to-use modulation software that was based on LabVIEW system. There are mainly four functions in this modulation software, such as computer generated holograms (CGH) generation, CGH reconstruction, image trimming, and special phase distribution. Based on the above development of CGH modulation software, we could enhance the performance of liquid crystal on silicon - spatial light modulator (LCoSSLM) as similar as the diffractive optical element (DOE) and use it on various adaptive optics (AO) applications. Through the development of special phase distribution, we are going to use the LCoS-SLM with CGH modulation software into AO technology, such as optical microscope system. When the LCOS-SLM panel is integrated in an optical microscope system, it could be placed on the illumination path or on the image forming path. However, LCOS-SLM provides a program-controllable liquid crystal array for optical microscope. It dynamically changes the amplitude or phase of light and gives the obvious advantage, "Flexibility", to the system

Programmable diffractive optical elements for extending the depth of focus in ophthalmic optics

NASA Astrophysics Data System (ADS)

Romero, Lenny A.; Millán, María. S.; Jaroszewicz, Zbigniew; Kołodziejczyk, Andrzej

2015-01-01

The depth of focus (DOF) defines the axial range of high lateral resolution in the image space for object position. Optical devices with a traditional lens system typically have a limited DOF. However, there are applications such as in ophthalmology, which require a large DOF in comparison to a traditional optical system, this is commonly known as extended DOF (EDOF). In this paper we explore Programmable Diffractive Optical Elements (PDOEs), with EDOF, as an alternative solution to visual impairments, especially presbyopia. These DOEs were written onto a reflective liquid cystal on silicon (LCoS) spatial light modulator (SLM). Several designs of the elements are analyzed: the Forward Logarithmic Axicon (FLAX), the Axilens (AXL), the Light sword Optical Element (LSOE), the Peacock Eye Optical Element (PE) and Double Peacock Eye Optical Element (DPE). These elements focus an incident plane wave into a segment of the optical axis. The performances of the PDOEs are compared with those of multifocal lenses. In all cases, we obtained the point spread function and the image of an extended object. The results are presented and discussed.

The Oxford SWIFT integral field spectrograph

NASA Astrophysics Data System (ADS)

Thatte, Niranjan; Tecza, Matthias; Clarke, Fraser; Goodsall, Timothy; Lynn, James; Freeman, David; Davies, Roger L.

2006-06-01

We present the design of the Oxford SWIFT integral field spectrograph, a dedicated I and z band instrument (0.65μm micron - 1.0μm micron at R~4000), designed to be used in conjunction with the Palomar laser guide star adaptive optics system (PALAO, and its planned upgrade PALM-3000). It builds on two recent developments (i) the improved ability of second generation adaptive optics systems to correct for atmospheric turbulence at wavelengths less than or equal to 1μm micron, and (ii) the availability of CCD array detectors with high quantum efficiency at very red wavelengths (close to the silicon band edge). Combining these with a state-of-the-art integral field unit design using an all-glass image slicer, SWIFT's design provides very high throughput and low scattered light. SWIFT simultaneously provides spectra of ~4000 spatial elements, arranged in a rectangular field-of-view of 44 × 89 pixels. It has three on-the-fly selectable pixel scales of 0.24", 0.16" and 0.08'. First light is expected in spring 2008.

Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications

NASA Astrophysics Data System (ADS)

Lee, Seyeong; Kim, Dongyoon; Kim, Seong-Min; Kim, Jeong-Ah; Kim, Taesoo; Kim, Dong-Yu; Yoon, Myung-Han

2015-08-01

Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc.Recent advances in nanostructure-based biotechnology have resulted in a growing demand for vertical nanostructure substrates with elaborate control over the nanoscale geometry and a high-throughput preparation. In this work, we report the fabrication of non-periodic vertical silicon nanocolumn substrates via polyelectrolyte multilayer-enabled randomized nanosphere lithography. Owing to layer-by-layer deposited polyelectrolyte adhesives, uniformly-separated polystyrene nanospheres were securely attached on large silicon substrates and utilized as masks for the subsequent metal-assisted silicon etching in solution. Consequently, non-periodic vertical silicon nanocolumn arrays were successfully fabricated on a wafer scale, while each nanocolumn geometric factor, such as the diameter, height, density, and spatial patterning, could be fully controlled in an independent manner. Finally, we demonstrate that our vertical silicon nanocolumn substrates support viable cell culture with minimal cell penetration and unhindered cell motility due to the blunt nanocolumn morphology. These results suggest that vertical silicon nanocolumn substrates may serve as a useful cellular interface platform for performing a statistically meaningful number of cellular experiments in the fields of biomolecular delivery, stem cell research, etc. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02384j

Light Trapping, Absorption and Solar Energy Harvesting by Artificial Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

John, Sajeev

2014-06-04

We have studied light trapping in conical pore silicon photonic crystal architectures. We find considerable improvement in solar absorption (relative to nanowires) in a square lattice of conical nano-pores.

MEMS Incandescent Light Source

NASA Technical Reports Server (NTRS)

Tuma, Margaret; King, Kevin; Kim, Lynn; Hansler, Richard; Jones, Eric; George, Thomas

2001-01-01

A MEMS-based, low-power, incandescent light source is being developed. This light source is fabricated using three bonded chips. The bottom chip consists of a reflector on Silicon, the middle chip contains a Tungsten filament bonded to silicon and the top layer is a transparent window. A 25-micrometer-thick spiral filament is fabricated in Tungsten using lithography and wet-etching. A proof-of-concept device has been fabricated and tested in a vacuum chamber. Results indicate that the filament is electrically heated to approximately 2650 K. The power required to drive the proof-of-concept spiral filament to incandescence is 1.25 W. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 microns. The micromachining techniques used to fabricate this light source can be applied to other MEMS devices.

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

NASA Astrophysics Data System (ADS)

Schmidt, Jan; Cuevas, Andrés

1999-09-01

In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1-31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017cm-3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley-Read-Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec-0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron-oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices.

High performance broadband photodetector based on MoS2/porous silicon heterojunction

NASA Astrophysics Data System (ADS)

Dhyani, Veerendra; Dwivedi, Priyanka; Dhanekar, Saakshi; Das, Samaresh

2017-11-01

A high speed efficient broadband photodetector based on a vertical n-MoS2/p-porous silicon heterostructure has been demonstrated. Large area MoS2 on electrochemical etched porous silicon was grown by sulphurization of a sputtered MoO3 thin film. A maximum responsivity of 9 A/W (550-850 nm) with a very high detectivity of ˜1014 Jones is observed. Transient measurements show a fast response time of ˜9 μs and is competent to work at high frequencies (˜50 kHz). The enhanced photodetection performance of the heterojunction made on porous silicon over that made on planar silicon is explained in terms of higher interfacial barrier height, superior light trapping property, and larger junction area in the MoS2/porous silicon junction.

A silicon-nanowire memory driven by optical gradient force induced bistability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, B.; Institute of Microelectronics, A*STAR; Cai, H., E-mail: caih@ime.a-star.edu.sg

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Subnanosecond-laser-induced periodic surface structures on prescratched silicon substrate

NASA Astrophysics Data System (ADS)

Hongo, Motoharu; Matsuo, Shigeki

2016-06-01

Laser-induced periodic surface structures (LIPSS) were fabricated on a prescratched silicon surface by irradiation with subnanosecond laser pulses. Low-spatial-frequency LIPSS (LSFL) were observed in the central and peripheral regions; both had a period Λ close to the laser wavelength λ, and the wavevector orientation was parallel to the electric field of the laser beam. The LSFL in the peripheral region seemed to be growing, that is, expanding in length with increasing number of pulses, into the outer regions. In addition, high-spatial-frequency LIPSS, Λ ≲ λ /2, were found along the scratches, and their wavevector orientation was parallel to the scratches.

Scanned Image Projection System Employing Intermediate Image Plane

NASA Technical Reports Server (NTRS)

DeJong, Christian Dean (Inventor); Hudman, Joshua M. (Inventor)

2014-01-01

In imaging system, a spatial light modulator is configured to produce images by scanning a plurality light beams. A first optical element is configured to cause the plurality of light beams to converge along an optical path defined between the first optical element and the spatial light modulator. A second optical element is disposed between the spatial light modulator and a waveguide. The first optical element and the spatial light modulator are arranged such that an image plane is created between the spatial light modulator and the second optical element. The second optical element is configured to collect the diverging light from the image plane and collimate it. The second optical element then delivers the collimated light to a pupil at an input of the waveguide.

Amorphous silicon photovoltaic devices

DOEpatents

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Navy Aegis Ballistic Missile Defense (BMD) Program: Background and Issues for Congress

DTIC Science & Technology

2010-09-28

co-development with Japan, for chemical vapor composite silicon carbide and silicon carbide corrugated mirror processes for the SM–3 Block IIA...all the more urgent in light of Iran’s continued uranium enrichment program. Iran continues to defy international obligations, and there continues to

Processing Research on Chemically Vapor Deposited Silicon Nitride

DTIC Science & Technology

1981-12-01

forming silicon carbide to reduce free silicon content. (b) Boron and aluminum were selected as two single-valence elements with small atomic radii which...obtained in cold wall (CW-3) runs were sliced into small flexure bars (19.1x3.2xt(mm) where t = thickness) if they appeared to be of suitable quality...discussed later. Addition of borcn trichloride in small amounts (Run 8) caused Formation of a light blue translucent deposit which contained at least one

Plasmaless cleaning process of silicon surface using chlorine trifluoride

NASA Astrophysics Data System (ADS)

Saito, Yoji; Yamaoka, Osamu; Yoshida, Akira

1990-03-01

Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the removal of the native oxide without changing the etch rate of silicon. The etched surface is analyzed with Auger electron measurement, indicating the existence of Cl atoms on it.

Squeezing of Light via Reflection from a Silicon Micromechanical Resonator

DTIC Science & Technology

2013-03-14

Hz. Laser phase noise on the signal beam can be converted to intensity noise by reflection from the dispersive cavity or due to frequency dependent...Figure A6: Experimental setup for characterization of intensity and phase noise. The laser is amplitude stabilized and an attenuator is used to select...nm thick silicon de- vice layer of a silicon-on-insulator microchip (see Fig. 1a). The in-plane differential motion of the two beams at a fundamental

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor

PubMed Central

Ouyang, Qingling; Zeng, Shuwen; Jiang, Li; Hong, Liying; Xu, Gaixia; Dinh, Xuan-Quyen; Qian, Jun; He, Sailing; Qu, Junle; Coquet, Philippe; Yong, Ken-Tye

2016-01-01

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. PMID:27305974

Characterization of Silicon Moth-Eye Antireflection Coatings for Astronomical Applications in the Infrared

NASA Astrophysics Data System (ADS)

Jeram, Sarik; Ge, Jian; Jiang, Peng; Phillips, Blayne

2016-01-01

Silicon moth-eye antireflective structures have emerged to be an excellent approachfor reducing the amount of light that is lost upon incidence on a given surface of optics made of silicon. This property has been exploited for a wide variety of products ranging from eyeglasses and flat-panel displays to solar panels. These materials typically come in the form of coatings that are applied to an optical substrate such as glass. Moth-eye coatings, made of a periodic array of subwavelength pillars on silicon substrates or other substrates, can produce the desired antireflection (AR) performance for a broad wavelength range and over a wide range of incident angles. In the field of astronomy, every photon striking a detector is significant - and thus, losses from reflectivity at the various optical interfaces before a detector can have significant implications to the science at hand. Moth-eye AR coatings on these optical interfaces may minimize their reflection losses while maximizing light throughput for a multitude of different astronomical instruments. In addition, moth-eye AR coatings, which are patterned directly on silicon surfaces, can significantly enhance the coating durability. At the University of Florida, we tested two moth-eye filters designed for use in the near-infrared regime at 1-8 microns by examining their optical properties, such as transmission, the scattered light, and wavefront quality, and testing the coatings at cryogenic temperatures to characterize their viability for use in both ground- and space-based infrared instruments. This presentation will report our lab evaluation results.

Ring-patterned plasmonic photonic crystal thermal light source for miniaturized near-infrared spectrometers

NASA Astrophysics Data System (ADS)

Labib, Shady R.; Elsayed, Ahmed A.; Sabry, Yasser M.; Khalil, Diaa

2018-02-01

There is a growing number of spectroscopy applications in the near-infrared (NIR) range including gas sensing, food analysis, pharmaceutical and industrial applications that requires highly efficient, more compact and low-cost miniaturized spectrometers. One of the key components for such systems is the wideband light source that can be fabricated using Silicon technology and hence integrated with other components on the same chip. In this work, we report a ring-patterned plasmonic photonic crystal (PC) thermal light source for miniaturized near-infrared spectrometers. The design is based on silicon and tuned to achieve wavelength selectivity in the emitted spectrum. The design is optimized by using Rigorous Coupled-Wave Analysis (RCWA) simulation, which is used to compute the power reflectance and transmittance that are used to predict the emissivity of the structure. The design consists of a PC of silicon rings coated with platinum. The period of the structure is about 2 μm and the silicon is highly-doped with n-type doping level in the order of 1019-1020 cm-3 to enhance the free-carrier absorption. The ring etching depth, diameter and shell thickness are optimized to increase its emissivity within a specific wavelength range of interest. The simulation results show an emissivity exceeding 0.9 in the NIR range up to 2.5 μm, while the emissivity is decreased significantly for longer wavelengths suppressing the emission out of the range of interest, and hence increasing the efficiency for the source. The reported results open the door for black body radiation engineering in integrated silicon sources for spectrometer miniaturization.

New dynamic silicon photonic components enabled by MEMS technology

NASA Astrophysics Data System (ADS)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Copper-assisted, anti-reflection etching of silicon surfaces

DOEpatents

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

Porous silicon nanocrystals in a silica aerogel matrix

PubMed Central

2012-01-01

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation. PMID:22805684

Porous silicon nanocrystals in a silica aerogel matrix.

PubMed

Amonkosolpan, Jamaree; Wolverson, Daniel; Goller, Bernhard; Polisski, Sergej; Kovalev, Dmitry; Rollings, Matthew; Grogan, Michael D W; Birks, Timothy A

2012-07-17

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Determination of X-ray flux using silicon pin diodes

PubMed Central

Owen, Robin L.; Holton, James M.; Schulze-Briese, Clemens; Garman, Elspeth F.

2009-01-01

Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced. PMID:19240326

Photothermally tunable silicon-microring-based optical add-drop filter through integrated light absorber.

PubMed

Chen, Xi; Shi, Yuechun; Lou, Fei; Chen, Yiting; Yan, Min; Wosinski, Lech; Qiu, Min

2014-10-20

An optically pumped thermo-optic (TO) silicon ring add-drop filter with fast thermal response is experimentally demonstrated. We propose that metal-insulator-metal (MIM) light absorber can be integrated into silicon TO devices, acting as a localized heat source which can be activated remotely by a pump beam. The MIM absorber design introduces less thermal capacity to the device, compared to conventional electrically-driven approaches. Experimentally, the absorber-integrated add-drop filter shows an optical response time of 13.7 μs following the 10%-90% rule (equivalent to a exponential time constant of 5 μs) and a wavelength shift over pump power of 60 pm/mW. The photothermally tunable add-drop filter may provide new perspectives for all-optical routing and switching in integrated Si photonic circuits.

Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

2013-12-01

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

Studying Silicon Photomultipliers and Light Signal Acquisition for the SBND Experiment

NASA Astrophysics Data System (ADS)

Savard, Claire; SBND Collaboration

2017-01-01

The Short-Baseline Near Detector (SBND) is one of three Liquid Argon Time Projection Chamber (LArTPC) based detectors that will be used in the Short-Baseline Neutrino (SBN) program at Fermilab. SBN will study the neutrino-argon interaction and search for oscillations at short baseline. Light produced in neutrino interactions inside a LArTPC provides a precision measurement of the initial interaction time of the event, essential for differentiating non-beam-background from beam-based signal. I will discuss the light guide system for SBND, with an emphasis on the Silicon Photomultiplier (SiPM) readout and data acquisition. In particular, I will show results from testing and characterizing a candidate electronics board for reading out the SiPM signals.

Diffraction-Based Optical Switching with MEMS

DOE PAGES

Blanche, Pierre-Alexandre; LaComb, Lloyd; Wang, Youmin; ...

2017-04-19

In this article, we are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two implementations have been demonstrated, one using the Texas Instruments DLP (Digital Light Processing), and the other an LCoS-based (Liquid Crystal on Silicon) SLM (Spatial Light Modulator). These switches demonstrated the benefit of diffraction, by independently achieving high speed, efficiency, and high number of ports.more » We also demonstrated for the first time that PSK (Phase Shift Keying) modulation format can be used with diffraction-based devices. To be truly effective in diffraction mode, the MEMS pixels should modulate the phase of the incident light. We are presenting our past and current efforts to manufacture a new type of MEMS where the pixels are moving in the vertical direction. The original structure is a 32 x 32 phase modulator array with high contrast grating pixels, and we are introducing a new sub-wavelength linear array capable of a 310 kHz modulation rate« less

An Experimental Study of a Micro-Projection Enabled Optical Terminal for Short-Range Bidirectional Multi-Wavelength Visible Light Communications

PubMed Central

Tsai, Cheng-Yu; Jiang, Jhih-Shan

2018-01-01

A micro-projection enabled short-range communication (SRC) approach using red-, green- and blue-based light-emitting diodes (RGB-LEDs) has experimentally demonstrated recently that micro-projection and high-speed data transmission can be performed simultaneously. In this research, a reconfigurable design of a polarization modulated image system based on the use of a Liquid Crystal on Silicon based Spatial Light Modulator (LCoS-based SLM) serving as a portable optical terminal capable of micro-projection and bidirectional multi-wavelength communications is proposed and experimentally demonstrated. For the proof of concept, the system performance was evaluated through a bidirectional communication link at a transmission distance over 0.65 m. In order to make the proposed communication system architecture compatible with the data modulation format of future possible wireless communication system, baseband modulation scheme, i.e., Non-Return-to-Zero On-Off-Keying (NRZ_OOK), M-ary Phase Shift Keying (M-PSK) and M-ary Quadrature Amplitude Modulation (M-QAM) were used to investigate the system transmission performance. The experimental results shown that an acceptable BER (satisfying the limitation of Forward Error Correction, FEC standard) and crosstalk can all be achieved in the bidirectional multi-wavelength communication scenario. PMID:29587457

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

Diffraction-Based Optical Switching with MEMS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blanche, Pierre-Alexandre; LaComb, Lloyd; Wang, Youmin

In this article, we are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two implementations have been demonstrated, one using the Texas Instruments DLP (Digital Light Processing), and the other an LCoS-based (Liquid Crystal on Silicon) SLM (Spatial Light Modulator). These switches demonstrated the benefit of diffraction, by independently achieving high speed, efficiency, and high number of ports.more » We also demonstrated for the first time that PSK (Phase Shift Keying) modulation format can be used with diffraction-based devices. To be truly effective in diffraction mode, the MEMS pixels should modulate the phase of the incident light. We are presenting our past and current efforts to manufacture a new type of MEMS where the pixels are moving in the vertical direction. The original structure is a 32 x 32 phase modulator array with high contrast grating pixels, and we are introducing a new sub-wavelength linear array capable of a 310 kHz modulation rate« less

Development of an amorphous selenium based photoconductor and its application in a high-sensitivity photodetector (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Ebisudani, Taishi; Ochiai, Jun; Saito, Ichitaro; Yamada, Takatoshi; Chua, Daniel H. C.; Mimura, Hidenori; Okano, Ken

2016-09-01

Although present imaging devices are mostly silicon-based devices such as CMOS and CCD, these devices are reaching their sensitivity limit due to the band gap of silicon. Amorphous selenium (a-Se) is a promising candidate for high- sensitivity photo imaging devices, because of its low thermal noise, high spatial resolution, as well as adaptability to wide-area deposition. In addition, internal signal amplification is reported on a-Se based photodetectors, which enables a photodetector having effective quantum efficiency over 100 % against visible light. Since a-Se has sensitivity to UV and soft X-rays, the reported internal signal amplification should be applicable to UV and X-ray detection. However, application of the internal signal amplification required high voltage, which caused unexpected breakdown at the contact or thin-film transistor-based signal read-out. For this reason, vacuum devices having electron-beam read-out is proposed. The advantages of vacuum-type devices are vacuum insulation and its extremely low dark current. In this study, we present recent progresses in developing a-Se based photoconductive films and photodetector using nitrogen-doped diamond electron beam source as signal read-out. A novel electrochemical method is used to dope impurities into a-Se, turning the material from weak p-type to n-type. A p-n junction is formed within a-Se photoconductive film, which has increased the sensitivity of a-Se based photodetector. Our result suggests a possibility of high sensitivity photodetector that can potentially break the limit of silicon-based devices.

Evaluation of the MTF for a-Si:H imaging arrays

NASA Astrophysics Data System (ADS)

Yorkston, John; Antonuk, Larry E.; Seraji, N.; Huang, Weidong; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1994-05-01

Hydrogenated amorphous silicon imaging arrays are being developed for numerous applications in medical imaging. Diagnostic and megavoltage images have previously been reported and a number of the intrinsic properties of the arrays have been investigated. This paper reports on the first attempt to characterize the intrinsic spatial resolution of the imaging pixels on a 450 micrometers pitch, n-i-p imaging array fabricated at Xerox P.A.R.C. The pre- sampled modulation transfer function was measured by scanning a approximately 25 micrometers wide slit of visible wavelength light across a pixel in both the DATA and FET directions. The results show that the response of the pixel in these orthogonal directions is well described by a simple model that accounts for asymmetries in the pixel response due to geometric aspects of the pixel design.

Laboratory evaluation of Fecker and Loral optical IR PWI systems

NASA Technical Reports Server (NTRS)

Gorstein, M.; Hallock, J. N.; Houten, M.; Mcwilliams, I. G.

1971-01-01

A previous flight test of two electro-optical pilot warning indicators, using a flashing xenon strobe and silicon detectors as cooperative elements, pointed out several design deficiencies. The present laboratory evaluation program corrected these faults and calibrated the sensitivity of both systems in azimuth elevation and range. The laboratory tests were performed on an optical bench and consisted of three basic components: (1) a xenon strobe lamp whose output is monitored at the indicator detector to give pulse to pulse information on energy content at the receiver; (2) a strobe light attenuating optical system which is calibrated photometrically to provide simulated range; and (3) a positioning table on which the indicator system under study is mounted and which provides spatial location coordinates for all data points. The test results for both systems are tabulated.

Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

NASA Astrophysics Data System (ADS)

Franken, R. H.-J.

2006-09-01

With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes at this surface. Additionally, we show that we can control the lateral feature sizes and obtain an optimized roughness for light scattering. With this new knowledge we were able to indicate the influence of the surface plasmon absorption of the textured Ag layers on the current enhancement and recognize this effect as one of the limiting factors to the current increase in thin film solar cells. Finally we present the dark and light current voltage (J-V) parameters of muc-Si:H solar cells as a function of the rms roughness of the substrate. We show that increased roughness can result in an increased defect density of the absorbing silicon layer (i layer), which limits the current collection in the solar cell. The presented research gives better understanding of the effect of TCOs and textured interfaces on light trapping and current enhancement in thin film silicon solar cells. The thesis explains some fundamental insights in light scattering and reveals some material and morphology features that are dominantly limiting the current generation in muc-Si:H solar cells deposited on light scattering back reflectors. Furthermore, it presents a method to obtain optimized back scattering contacts at deposition temperatures below 300 oC, which opens the possibility for the use of heat resistant plastic substrates. We improved the muc-Si:H solar cell efficiency with flat back reflectors from 4.5 % and 14.6 mA/cm2 to 8.5 % and 23.4 mA/cm2 with the use of optimized back reflectors.

Development of a Modern Cosmic Ray Telescope based on Silicon Photomultipliers for use in High Schools

NASA Astrophysics Data System (ADS)

Ruiz Castruita, Daniel; Niduaza, Rommel; Hernandez, Victor; Knox, Adrian; Ramos, Daniel; Fan, Sewan; Fatuzzo, Laura

2015-04-01

Lately, a new light sensor technology based on the breakdown phenomenon in the reverse biased silicon diode has found many applications that span from particle physics to medical imaging science. The silicon photomultiplier (SiPM) has several notable advantages compared to conventional photomultiplier tubes which include: lower cost, lower operating voltage and the ability to measure very weak light signals at the single photon level. At this conference meeting, we describe our efforts to implement SiPMs as read out light detectors for plastic scintillators in a cosmic ray telescope for use in high schools. In particular, we describe our work in designing, testing and assembling the cosmic ray telescope. We include a high gain preamplifier, a custom coincidence circuit using fast comparators to discriminate the SiPM signal amplitudes and a monovibrator IC for lengthening the singles and coincidence logic pulses. An Arduino micro-controller and program sketches are used for processing and storing the singles and coincidence counts data. Results from our measurements would be illustrated and presented. US Department of Education Title V Grant Award PO31S090007.

Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Inglese, Alessandro; Lindroos, Jeanette; Vahlman, Henri; Savin, Hele

2016-09-01

The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley—Read—Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec-Et=0.48 -0.62 eV with a moderate donor-like capture asymmetry ( k =1.7 -2.6 ) and an additional shallow energy state located at Ec-Et=0.1 -0.2 eV , which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare these results with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.

Monolithic integration of elliptic-symmetry diffractive optical element on silicon-based 45 degrees micro-reflector.

PubMed

Lan, Hsiao-Chin; Hsiao, Hsu-Liang; Chang, Chia-Chi; Hsu, Chih-Hung; Wang, Chih-Ming; Wu, Mount-Learn

2009-11-09

A monolithically integrated micro-optical element consisting of a diffractive optical element (DOE) and a silicon-based 45 degrees micro-reflector is experimentally demonstrated to facilitate the optical alignment of non-coplanar fiber-to-fiber coupling. The slanted 45 degrees reflector with a depth of 216 microm is fabricated on a (100) silicon wafer by anisotropic wet etching. The DOE with a diameter of 174.2 microm and a focal length of 150 microm is formed by means of dry etching. Such a compact device is suitable for the optical micro-system to deflect the incident light by 90 degrees and to focus it on the image plane simultaneously. The measured light pattern with a spot size of 15 microm has a good agreement with the simulated result of the elliptic-symmetry DOE with an off-axis design for eliminating the strongly astigmatic aberration. The coupling efficiency is enhanced over 10-folds of the case without a DOE on the 45 degrees micro-reflector. This device would facilitate the optical alignment of non-coplanar light coupling and further miniaturize the volume of microsystem.

Melting Experiments in the Fe-FeSi System at High Pressure

NASA Astrophysics Data System (ADS)

Ozawa, H.; Hirose, K.

2013-12-01

The principal light element in the Earth's core must reproduce the density jump at the inner core boundary (ICB). Silicon is thought to be a plausible light element in the core, and the melting phase relations in Fe-FeSi binary system at the ICB pressure are of great importance. Theoretical calculations on the Fe-FeSi binary system suggested that the difference in Si content between the outer core and the inner core would be too small to satisfy the observed density jump at the ICB [Alfè et al., 2002 EPSL], which requires other light elements in addition to silicon. Here we experimentally examined partitioning of silicon between liquid and solid iron up to 97 GPa. High pressure and temperature conditions were generated in a laser-heated diamond-anvil cell. Chemical compositions of co-existing quenched liquid and solid Fe-Si alloys were determined with a field-emission-type electron probe micro-analyzer. We used Fe-Si alloy containing 9 wt% Si as a starting material. Chemical analyses on the recovered samples from 39 and 49 GPa demonstrated the coexistence of quenched Si-depleted liquid and Si-enriched solid. In contrast, silicon partitions preferentially into liquid metal at 97 GPa, suggesting the starting composition (Fe-9wt% Si) lies on the iron-rich part of the eutectic. These results indicate the eutectic composition shifts toward FeSi between 49 and 97 GPa.

Modification of porous silicon rugate filters through thiol-yne photochemistry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soeriyadi, Alexander H., E-mail: alexander.soeriyadi@unsw.edu.au; Zhu, Ying, E-mail: alexander.soeriyadi@unsw.edu.au; Gooding, J. Justin, E-mail: justin.gooding@unsw.edu.au

2014-02-24

Porous silicon (PSi) has a considerable potential as biosensor platform. In particular, the ability to modify the surface chemistry of porous silicon is of interest. Here we present a generic method to modify the surface of porous silicon through thiol-yne photochemistry initiated by a radical initiator. Firstly, a freshly etched porous silicon substrate is modified through thermal hydrosilylation with 1,8-nonadiyne to passivate the surface and introduce alkyne functionalities. The alkyne functional surface could then be further reacted with thiol species in the presence of a radical initiator and UV light. Functionalization of the PSi rugate filter is followed with opticalmore » reflectivity measurements as well as high resolution X-ray photoelectron spectroscopy (XPS)« less

Evanescent Microwave Probes on High-Resistivity Silicon and its Application in Characterization of Semiconductors

NASA Technical Reports Server (NTRS)

Tabib-Azar, M.; Akinwande, D.; Ponchak, George E.; LeClair, S. R.

1999-01-01

In this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-rho) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-rho silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron-hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator.

SiN-assisted polarization-insensitive multicore fiber to silicon photonics interface

NASA Astrophysics Data System (ADS)

Poulopoulos, Giannis N.; Kalavrouziotis, Dimitrios; Mitchell, Paul; Macdonald, John R.; Bakopoulos, Paraskevas; Avramopoulos, Hercules

2015-06-01

We demonstrate a polarization-insensitive coupler interfacing multicore-fiber (MCF) to silicon waveguides. It comprises a 3D glass fanout transforming the circular MCF core-arrangement to linear and performing initial tapering, followed by a Spot-Size-Converter on the silicon chip. Glass waveguides are formed of multiple overlapped modification elements and appropriate offsetting thereof yields tapers with symmetric cross-section. The Spot-Size-Converter is an inverselytapered silicon waveguide with a tapered polymer overcladding where light is initially coupled, whereas phase-matching gradually shifts it towards the silicon core. Co-design of the glass fanout and Spot-Size-Converter obtains theoretical loss below 1dB for the overall Si-to-MCF transition in both polarizations.

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

Light-trapping surface coating with concave arrays for efficiency enhancement in amorphous silicon thin-film solar cells

NASA Astrophysics Data System (ADS)

Liu, Daiming; Wang, Qingkang

2018-08-01

Light trapping is particularly important because of the desire to produce low-cost solar cells with the thinnest possible photoactive layers. Herein, along the research line of "optimization →fabrication →characterization →application", concave arrays were incorporated into amorphous silicon thin-film solar cell for lifting its photoelectric conversion efficiency. In advance, based on rigorous coupled wave analysis method, optics simulations were performed to obtain the optimal period of 10 μm for concave arrays. Microfabrication processes were used to etch concave arrays on glass, and nanoimprint was devoted to transfer the pattern onto polymer coatings with a high fidelity. Spectral characterizations prove that the concave-arrays coating enjoys excellent the light-trapping behaviors, by reducing the reflectance to 7.4% from 8.6% of bare glass and simultaneously allowing a high haze ratio of ∼ 70% in 350-800 nm. Compared with bare cell, the concave-arrays coating based amorphous silicon thin-film solar cell possesses the improving photovoltaic performances. Relative enhancements are 3.46% and 3.57% in short circuit current and photoelectric conversion efficiency, respectively. By the way, this light-trapping coating is facile, low-cost and large-scale, and can be straightforward introduced in other ready-made solar devices.

Fast subsurface fingerprint imaging with full-field optical coherence tomography system equipped with a silicon camera

NASA Astrophysics Data System (ADS)

Auksorius, Egidijus; Boccara, A. Claude

2017-09-01

Images recorded below the surface of a finger can have more details and be of higher quality than the conventional surface fingerprint images. This is particularly true when the quality of the surface fingerprints is compromised by, for example, moisture or surface damage. However, there is an unmet need for an inexpensive fingerprint sensor that is able to acquire high-quality images deep below the surface in short time. To this end, we report on a cost-effective full-field optical coherent tomography system comprised of a silicon camera and a powerful near-infrared LED light source. The system, for example, is able to record 1.7 cm×1.7 cm en face images in 0.12 s with the spatial sampling rate of 2116 dots per inch and the sensitivity of 93 dB. We show that the system can be used to image internal fingerprints and sweat ducts with good contrast. Finally, to demonstrate its biometric performance, we acquired subsurface fingerprint images from 240 individual fingers and estimated the equal-error-rate to be ˜0.8%. The developed instrument could also be used in other en face deep-tissue imaging applications because of its high sensitivity, such as in vivo skin imaging.

Silver nanoprisms/silicone hybrid rubber materials and their optical limiting property to femtosecond laser

NASA Astrophysics Data System (ADS)

Li, Chunfang; Liu, Miao; Jiang, Nengkai; Wang, Chunlei; Lin, Weihong; Li, Dongxiang

2017-08-01

Optical limiters against femtosecond laser are essential for eye and sensor protection in optical processing system with femtosecond laser as light source. Anisotropic Ag nanoparticles are expected to develop into optical limiting materials for femtosecond laser pulses. Herein, silver nanoprisms are prepared and coated by silica layer, which are then doped into silicone rubber to obtain hybrid rubber sheets. The silver nanoprisms/silicone hybrid rubber sheets exhibit good optical limiting property to femtosecond laser mainly due to nonlinear optical absorption.

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

PubMed

Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

2013-11-15

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

NASA Technical Reports Server (NTRS)

Fripp, A. L., Jr.

1974-01-01

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Silicone Coating on Polyimide Sheet

NASA Technical Reports Server (NTRS)

Park, J. J.

1985-01-01

Silicone coatings applied to polyimide sheeting for variety of space-related applications. Coatings intended to protect flexible substrates of solar-cell blankets from degradation by oxygen atoms, electrons, plasmas, and ultraviolet light in low Earth orbit and outer space. Since coatings are flexible, generally useful in forming flexible laminates or protective layers on polyimide-sheet products.

Navy Aegis Ballistic Missile Defense (BMD) Program: Background and Issues for Congress

DTIC Science & Technology

2011-04-19

for SM-3 Block IIA co-development with Japan, for chemical vapor composite silicon carbide and silicon carbide corrugated mirror processes for the SM...to say, this concern is all the more urgent in light of Iran’s continued uranium enrichment program. Iran continues to defy international obligations

Semi-transparent solar cells

NASA Astrophysics Data System (ADS)

Sun, J.; Jasieniak, J. J.

2017-03-01

Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

Indium-tin-oxide nanowhiskers crystalline silicon photovoltaics combining micro- and nano-scale surface textures

NASA Astrophysics Data System (ADS)

Chang, C. H.; Hsu, M. H.; Chang, W. L.; Sun, W. C.; Yu, Peichen

2011-02-01

In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The combined surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on passivated, micro-grooved silicon solar cells using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared, which is optically equivalent to a stack of two dielectric thin-films with step- and graded- refractive index profiles. The ITO nanowhiskers provide broadband anti-reflective properties (R<5%) in the wavelength range of 350-1100nm. In comparison with conventional Si solar cell, the combined surface texture solar cell shows higher external quantum efficiency (EQE) in the range of 700-1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). Furthermore, the nano-whiskers also provide strong forward scattering for ultraviolet and visible light, favorable in thin-wafer silicon photovoltaics to increase the optical absorption path.

Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures.

PubMed

Huang, Yi-Fan; Chattopadhyay, Surojit; Jen, Yi-Jun; Peng, Cheng-Yu; Liu, Tze-An; Hsu, Yu-Kuei; Pan, Ci-Ling; Lo, Hung-Chun; Hsu, Chih-Hsun; Chang, Yuan-Huei; Lee, Chih-Shan; Chen, Kuei-Hsien; Chen, Li-Chyong

2007-12-01

Nature routinely produces nanostructured surfaces with useful properties, such as the self-cleaning lotus leaf, the colour of the butterfly wing, the photoreceptor in brittlestar and the anti-reflection observed in the moth eye. Scientists and engineers have been able to mimic some of these natural structures in the laboratory and in real-world applications. Here, we report a simple aperiodic array of silicon nanotips on a 6-inch wafer with a sub-wavelength structure that can suppress the reflection of light at a range of wavelengths from the ultraviolet, through the visible part of the spectrum, to the terahertz region. Reflection is suppressed for a wide range of angles of incidence and for both s- and p-polarized light. The antireflection properties of the silicon result from changes in the refractive index caused by variations in the height of the silicon nanotips, and can be simulated with models that have been used to explain the low reflection from moth eyes. The improved anti-reflection properties of the surfaces could have applications in renewable energy and electro-optical devices for the military.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

PubMed

Yang, Zhenhai; Shang, Aixue; Qin, Linling; Zhan, Yaohui; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

2016-04-01

We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 μm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 μm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10  mA/cm² in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

Locally-enhanced light scattering by a monocrystalline silicon wafer

NASA Astrophysics Data System (ADS)

Ma, Li; Zhang, Pan; Li, Zhen-Hua; Liu, Chun-Xiang; Li, Xing; Zhan, Zi-Jun; Ren, Xiao-Rong; He, Chang-Wei; Chen, Chao; Cheng, Chuan-Fu

2018-03-01

We study the optical properties of light scattering by a monocrystalline silicon wafer, by using transparent material to replicate its surface structure and illuminating a fabricated sample with a laser source. The experimental results show that the scattering field contains four spots of concentrated intensity with high local energy, and these spots are distributed at the four vertices of a square with lines of intensity linking adjacent spots. After discussing simulations of and theory about the formation of this light scattering, we conclude that the scattering field is formed by the effects of both geometrical optics and physical optics. Moreover, we calculate the central angle of the spots in the light field, and the result indicates that the locally-enhanced intensity spots have a definite scattering angle. These results may possibly provide a method for improving energy efficiency within mono-Si based solar cells.

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices

NASA Astrophysics Data System (ADS)

Ran, G. Z.; Jiang, D. F.; Kan, Q.; Chen, H. D.

2010-12-01

We have observed a strongly polarized edge-emission from an organic light emitting device (OLED) with a silicon anode and a stacked Sm/Au (or Ag) cathode. For the OLED with a Sm/Au cathode, the transverse magnetic (TM) mode is stronger than the transverse electric (TE) mode by a factor of 2, while the polarization ratio of TM:TE is close to 300 for that with a Sm/Ag cathode. The polarization results from the scattering of surface plasmon polaritons at the device boundary. Such a silicon-based OLED is potentially an electrically excited SPP source in plasmonics.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Leung, D. C.; Iles, P. A.

1983-01-01

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

Indoor Light Performance of Coil Type Cylindrical Dye Sensitized Solar Cells.

PubMed

Kapil, Gaurav; Ogomi, Yuhei; Pandey, Shyam S; Ma, Tingli; Hayase, Shuzi

2016-04-01

A very good performance under low/diffused light intensities is one of the application areas in which dye-sensitized solar cells (DSSCs) can be utilized effectively compared to their inorganic silicon solar cell counterparts. In this article, we have investigated the 1 SUN and low intensity fluorescent light performance of Titanium (Ti)-coil based cylindrical DSSC (C-DSSC) using ruthenium based N719 dye and organic dyes such as D205 and Y123. Electrochemical impedance spectroscopic results were analyzed for variable solar cell performances. Reflecting mirror with parabolic geometry as concentrator was also utilized to tap diffused light for indoor applications. Fluorescent light at relatively lower illumination intensities (0.2 mW/cm2 to 0.5 mW/cm2) were used for the investigation of TCO-less C-DSSC performance with and without reflector geometry. Furthermore, the DSSC performances were analyzed and compared with the commercially available amorphous silicon based solar cell for indoor applications.

Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell

NASA Astrophysics Data System (ADS)

A. Betty, C.; N, Padma; Arora, Shalav; Survaiya, Parth; Bhattacharya, Debarati; Choudhury, Sipra; Roy, Mainak

2018-01-01

A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the π-π stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives Voc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer.

Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley E. Patt; Jan S. Iwanczyk

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

Metal-assisted chemical etch porous silicon formation method

DOEpatents

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Tip-Enhanced Raman Imaging and Nano Spectroscopy of Etched Silicon Nanowires

PubMed Central

Kazemi-Zanjani, Nastaran; Kergrene, Erwan; Liu, Lijia; Sham, Tsun-Kong; Lagugné-Labarthet, François

2013-01-01

Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations. PMID:24072021

Effects of nutrients and light intensity on the growth and biochemical composition of a marine microalga Odontella aurita

NASA Astrophysics Data System (ADS)

Xia, Song; Wan, Linglin; Li, Aifen; Sang, Min; Zhang, Chengwu

2013-11-01

Algal biotechnology has advanced greatly in the past three decades. Many microalgae are now cultivated to produce bioactive substances. Odontella aurita is a marine diatom industrially cultured in outdoor open ponds and used for human nutrition. For the first time, we have systematically investigated the effects of culture conditions in cylindrical glass columns and flat-plate photobioreactors, including nutrients (nitrogen, phosphorus, silicon, and sulfur), light intensity and light path, on O. aurita cell growth and biochemical composition (protein, carbohydrate, β-1,3-glucan, lipids, and ash). The optimal medium for photoautotrophic cultivation of O. aurita contained 17.65 mmol/L nitrogen, 1.09 mmol/L phosphorus, 0.42 mmol/L silicon, and 24.51 mmol/L sulfur, yielding a maximum biomass production of 6.1-6.8 g/L and 6.7-7.8 g/L under low and high light, respectively. Scale-up experiments were conducted with flat-plate photobioreactors using different light-paths, indicating that a short light path was more suitable for biomass production of O. aurita. Analyses of biochemical composition showed that protein content decreased while carbohydrate (mainly composed of β-1,3-glucan) increased remarkably to about 50% of dry weight during the entire culture period. The highest lipid content (19.7% of dry weight) was obtained under 0.11 mmol/L silicon and high light conditions at harvest time. Fatty acid Profiles revealed that 80% were C14, C16, and C20, while arachidonic acid and eicosapentaenoic acid (EPA) accounted for 1.6%-5.6% and 9%-20% of total fatty acids, respectively. High biomass production and characteristic biochemical composition Profiles make O. aurita a promising microalga for the production of bioactive components, such as EPA and β-1,3-glucan.

Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Winans, Joshua David

As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

Determination of the Quantum Efficiency of a Light Detector

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2008-01-01

The "quantum efficiency" (QE) is an important property of a light detector. This quantity can be determined in the undergraduate physics laboratory. The experimentally determined QE of a silicon photodiode appeared to be in reasonable agreement with expected values. The experiment confirms the quantum properties of light and seems to be a useful…

Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

NASA Astrophysics Data System (ADS)

Stupca, Matthew; Nayfeh, Osama M.; Hoang, Tuan; Nayfeh, Munir H.; Alhreish, Bahjat; Boparai, Jack; AlDwayyan, Abdullah; AlSalhi, Mohamad

2012-10-01

Present red phosphor converters provide spectra dominated by sharp lines and suffer from availability and stability issues which are not ideal for color mixing in display or solid state lighting applications. We examine the use of mono dispersed 3 nm silicon nanoparticles, with inhomogeneously broadened red luminescence as an effective substitute for red phosphors. We tested a 3-phase hybrid nanophosphor consisting of ZnS:Ag, ZnS:Cu,Au,Al, and nanoparticles. Correlated color temperature is examined under UV and LED pumping in the range 254, 365-400 nm. The temperature is found reasonably flat for the longer wavelengths and drops for the shorter wavelengths while the color rendering index increases. The photo stability of the phosphors relative to the silicon nanoparticles is recorded. The variation in the temperature is analyzed in terms of the strength of inter-band-gap transition and continuum band to band transitions.

Self-aligned process for forming microlenses at the tips of vertical silicon nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dan, Yaping, E-mail: yaping.dan@sjtu.edu.cn; Chen, Kaixiang; Crozier, Kenneth B.

The microlens is a key enabling technology in optoelectronics, permitting light to be efficiently coupled to and from devices such as image sensors and light-emitting diodes. Their ubiquitous nature motivates the development of new fabrication techniques, since existing methods face challenges as microlenses are scaled to smaller dimensions. Here, the authors demonstrate the formation of microlenses at the tips of vertically oriented silicon nanowires via a rapid atomic layer deposition process. The nature of the process is such that the microlenses are centered on the nanowires, and there is a self-limiting effect on the final sizes of the microlenses arisingmore » from the nanowire spacing. Finite difference time domain electromagnetic simulations are performed of microlens focusing properties, including showing their ability to enhance visible-wavelength absorption in silicon nanowires.« less

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

DEATH-STAR: Silicon and Photovoltaic Fission Fragment Detector Arrays for Light-Ion Induced Fission Correlation Studies

NASA Astrophysics Data System (ADS)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; Jovanovic, I.

2017-05-01

The Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE - E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution of 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE PAGES

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; ...

2017-02-20

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

Micro - ring resonator with variety of gap width for acid rain sensing application: preliminary study

NASA Astrophysics Data System (ADS)

Mulyanti, B.; Ramza, H.; Pawinanto, R. E.; Rahman, J. A.; Ab-Rahman, M. S.; Putro, W. S.; Hasanah, L.; Pantjawati, A. B.

2017-05-01

The acid rain is an environmental disaster that it will be intimidates human life. The development micro-ring resonator sensor created from SOI (Silicon on insulator) and it used to detect acid rain index. In this study, the LUMERICAL software was used to simulate SOI material micro-ring resonator. The result shows the optimum values of fixed parameters from ring resonator have dependent variable in gap width. The layers under ring resonator with silicone (Si) and wafer layer of silicone material (Si) were added to seen three conditions of capability model. Model - 3 is an additional of bottom layer that gives the significant effect on the factor of quality. The optimum value is a peak value that given by the FSR calculation. FSR = 0, it means that is not shows the light propagation in the ring resonator and none of the light coming out on the bus - line.

Rapid Surface Functionalization of Hydrogen-Terminated Silicon by Alkyl Silanols.

PubMed

Escorihuela, Jorge; Zuilhof, Han

2017-04-26

Surface functionalization of inorganic semiconductor substrates, particularly silicon, has focused attention toward many technologically important applications, involving photovoltaic energy, biosensing and catalysis. For such modification processes, oxide-free (H-terminated) silicon surfaces are highly required, and different chemical approaches have been described in the past decades. However, their reactivity is often poor, requiring long reaction times (2-18 h) or the use of UV light (10-30 min). Here, we report a simple and rapid surface functionalization for H-terminated Si(111) surfaces using alkyl silanols. This catalyst-free surface reaction is fast (15 min at room temperature) and can be accelerated with UV light irradiation, reducing the reaction time to 1-2 min. This grafting procedure leads to densely packed organic monolayers that are hydrolytically stable (even up to 30 days at pH 3 or 11) and can display excellent antifouling behavior against a range of organic polymers.

Rapid Surface Functionalization of Hydrogen-Terminated Silicon by Alkyl Silanols

PubMed Central

2017-01-01

Surface functionalization of inorganic semiconductor substrates, particularly silicon, has focused attention toward many technologically important applications, involving photovoltaic energy, biosensing and catalysis. For such modification processes, oxide-free (H-terminated) silicon surfaces are highly required, and different chemical approaches have been described in the past decades. However, their reactivity is often poor, requiring long reaction times (2–18 h) or the use of UV light (10–30 min). Here, we report a simple and rapid surface functionalization for H-terminated Si(111) surfaces using alkyl silanols. This catalyst-free surface reaction is fast (15 min at room temperature) and can be accelerated with UV light irradiation, reducing the reaction time to 1–2 min. This grafting procedure leads to densely packed organic monolayers that are hydrolytically stable (even up to 30 days at pH 3 or 11) and can display excellent antifouling behavior against a range of organic polymers. PMID:28409624

Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

NASA Technical Reports Server (NTRS)

Chen, L. Y.; Loferski, J. J.

1975-01-01

Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Study of white light emission from ZnS/PS composite system

NASA Astrophysics Data System (ADS)

Wang, Caifeng; Li, Qingshan; Lu, Lei; Zhang, Lichun; Qi, Hongxia

2007-09-01

ZnS films were deposited by pulsed laser deposition (PLD) on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. The photoluminescence (PL) spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures (200, 300, and 400 Celsius degree) for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band (450-700 nm) in the visible region, exhibiting intensively white light emission.

Liquid crystal television spatial light modulators

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Chao, Tien-Hsin

1989-01-01

The spatial light modulation characteristics and capabilities of the liquid crystal television (LCTV) spatial light modulators (SLMs) are discussed. A comparison of Radio Shack, Epson, and Citizen LCTV SLMs is made.

Demonstration of free space coherent optical communication using integrated silicon photonic orbital angular momentum devices.

PubMed

Su, Tiehui; Scott, Ryan P; Djordjevic, Stevan S; Fontaine, Nicolas K; Geisler, David J; Cai, Xinran; Yoo, S J B

2012-04-23

We propose and demonstrate silicon photonic integrated circuits (PICs) for free-space spatial-division-multiplexing (SDM) optical transmission with multiplexed orbital angular momentum (OAM) states over a topological charge range of -2 to +2. The silicon PIC fabricated using a CMOS-compatible process exploits tunable-phase arrayed waveguides with vertical grating couplers to achieve space division multiplexing and demultiplexing. The experimental results utilizing two silicon PICs achieve SDM mux/demux bit-error-rate performance for 1‑b/s/Hz, 10-Gb/s binary phase shifted keying (BPSK) data and 2-b/s/Hz, 20-Gb/s quadrature phase shifted keying (QPSK) data for individual and two simultaneous OAM states. © 2012 Optical Society of America

a-Si:H TFT-silicon hybrid low-energy x-ray detector

DOE PAGES

Shin, Kyung -Wook; Karim, Karim S.

2017-03-15

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

White light scanner-based repeatability of 3-dimensional digitizing of silicon rubber abutment teeth impressions

PubMed Central

Jeon, Jin-Hun; Lee, Kyung-Tak; Kim, Hae-Young; Kim, Ji-Hwan

2013-01-01

PURPOSE The aim of this study was to evaluate the repeatability of the digitizing of silicon rubber impressions of abutment teeth by using a white light scanner and compare differences in repeatability between different abutment teeth types. MATERIALS AND METHODS Silicon rubber impressions of a canine, premolar, and molar tooth were each digitized 8 times using a white light scanner, and 3D surface models were created using the point clouds. The size of any discrepancy between each model and the corresponding reference tooth were measured, and the distribution of these values was analyzed by an inspection software (PowerInspect 2012, Delcamplc., Birmingham, UK). Absolute values of discrepancies were analyzed by the Kruskal-Wallis test and multiple comparisons (α=.05). RESULTS The discrepancy between the impressions for the canine, premolar, and molar teeth were 6.3 µm (95% confidence interval [CI], 5.4-7.2), 6.4 µm (95% CI, 5.3-7.6), and 8.9 µm (95% CI, 8.2-9.5), respectively. The discrepancy of the molar tooth impression was significantly higher than that of other tooth types. The largest variation (as mean [SD]) in discrepancies was seen in the premolar tooth impression scans: 26.7 µm (95% CI, 19.7-33.8); followed by canine and molar teeth impressions, 16.3 µm (95% CI, 15.3-17.3), and 14.0 µm (95% CI, 12.3-15.7), respectively. CONCLUSION The repeatability of the digitizing abutment teeth's silicon rubber impressions by using a white light scanner was improved compared to that with a laser scanner, showing only a low mean discrepancy between 6.3 µm and 8.9 µm, which was in an clinically acceptable range. Premolar impression with a long and narrow shape showed a significantly larger discrepancy than canine and molar impressions. Further work is needed to increase the digitizing performance of the white light scanner for deep and slender impressions. PMID:24353885

a Study of Oxygen Precipitation in Heavily Doped Silicon.

NASA Astrophysics Data System (ADS)

Graupner, Robert Kurt

Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation processes. This could lead to more effective control and use of oxygen precipitation for gettering. One of the principal purposes of this thesis is the extension of the infrared interstitial oxygen measurement technique to situations outside the measurement capacities of the standard technique. These situations include silicon slices exhibiting interfering precipitate absorption bands and heavily doped n-type silicon wafers. A new method is presented for correcting for the effect of multiple reflections in silicon wafers with optically rough surfaces. The technique for the measurement of interstitial oxygen in heavily doped n-type wafers is then used to perform a comparative study of oxygen precipitation in heavily antimony doped (.035 ohm-cm) silicon and lightly doped p-type silicon. A model is presented to quantitatively explain the observed suppression of defect formation in heavily doped n-type wafers.

Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

NASA Technical Reports Server (NTRS)

Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

1976-01-01

Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

Silicon-Etalon Fiber-Optic Temperature Sensor

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Fritsch, Klaus; Flatico, Joseph M.; Azar, Massood Tabib

1993-01-01

Developmental temperature sensor consists of silicon Fabry-Perot etalon attached to end of optical fiber. Features immunity to electrical interference, small size, light weight, safety, and chemical inertness. Output encoded in ration of intensities at two different wavelengths, rather than in overall intensity, with result that temperature readings not degraded much by changes in transmittance of fiber-optic link.

Structural changes in shock compressed silicon observed using time-resolved x-ray diffraction at the Dynamic Compression Sector

NASA Astrophysics Data System (ADS)

Turneaure, Stefan; Zdanowicz, E.; Sinclair, N.; Graber, T.; Gupta, Y. M.

2015-06-01

Structural changes in shock compressed silicon were observed directly using time-resolved x-ray diffraction (XRD) measurements at the Dynamic Compression Sector at the Advanced Photon Source. The silicon samples were impacted by polycarbonate impactors accelerated to velocities greater than 5 km/s using a two-stage light gas gun resulting in impact stresses of about 25 GPa. The 23.5 keV synchrotron x-ray beam passed through the polycarbonate impactor, the silicon sample, and an x-ray window (polycarbonate or LiF) at an angle of 30 degrees relative to the impact plane. Four XRD frames (~ 100 ps snapshots) were obtained with 153.4 ns between frames near the time of impact. The XRD measurements indicate that in the peak shocked state, the silicon samples completely transformed to a high-pressure phase. XRD results for both shocked polycrystalline silicon and single crystal silicon will be presented and compared. Work supported by DOE/NNSA.

Selenium bond decreases ON resistance of light-activated switch

NASA Technical Reports Server (NTRS)

1965-01-01

Vitrified amorphous selenium bond decreases the ON resistance of a gallium arsenide-silicon light-activated, low-level switch. The switch is used under a pulse condition to prolong switch life and minimize errors due to heating, devitrification, and overdrawing.

Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers.

PubMed

Hinken, David; Schinke, Carsten; Herlufsen, Sandra; Schmidt, Arne; Bothe, Karsten; Brendel, Rolf

2011-03-01

We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge carriers are excited electrically (electroluminescence) using a power supply for carrier injection or optically (photoluminescence) using a laser as illumination source. The luminescence emission arising from the radiative recombination of the stimulated charge carriers is measured spatially resolved using a camera. We give details of the various components including cameras, optical filters for electro- and photo-luminescence, the semiconductor laser and the four-quadrant power supply. We compare a silicon charged-coupled device (CCD) camera with a back-illuminated silicon CCD camera comprising an electron multiplier gain and a complementary metal oxide semiconductor indium gallium arsenide camera. For the detection of the luminescence emission of silicon we analyze the dominant noise sources along with the signal-to-noise ratio of all three cameras at different operation conditions.

Optimized light sharing for high-resolution TOF PET detector based on digital silicon photomultipliers.

PubMed

Marcinkowski, R; España, S; Van Holen, R; Vandenberghe, S

2014-12-07

The majority of current whole-body PET scanners are based on pixelated scintillator arrays with a transverse pixel size of 4 mm. However, recent studies have shown that decreasing the pixel size to 2 mm can significantly improve image spatial resolution. In this study, the performance of Digital Photon Counter (DPC) from Philips Digital Photon Counting (PDPC) was evaluated to determine their potential for high-resolution whole-body time of flight (TOF) PET scanners. Two detector configurations were evaluated. First, the DPC3200-44-22 DPC array was coupled to a LYSO block of 15 × 15 2 × 2 × 22 mm(3) pixels through a 1 mm thick light guide. Due to light sharing among the dies neighbour logic of the DPC was used. In a second setup the same DPC was coupled directly to a scalable 4 × 4 LYSO matrix of 1.9 × 1.9 × 22 mm(3) crystals with a dedicated reflector arrangement allowing for controlled light sharing patterns inside the matrix. With the first approach an average energy resolution of 14.5% and an average CRT of 376 ps were achieved. For the second configuration an average energy resolution of 11% and an average CRT of 295 ps were achieved. Our studies show that the DPC is a suitable photosensor for a high-resolution TOF-PET detector. The dedicated reflector arrangement allows one to achieve better performances than the light guide approach. The count loss, caused by dark counts, is overcome by fitting the matrix size to the size of DPC single die.

Spatial Light Modulator Would Serve As Electronic Iris

NASA Technical Reports Server (NTRS)

Gutow, David A.

1991-01-01

In proposed technique for controlling brightness of image formed by lens, spatial light modulator serves as segmented, electronically variable aperture. Offers several advantages: spatial light modulator controlled remotely and responds faster than motorized iris or other remotely controlled mechanical iris. Unlike iris, modulator also configured so as not to vary depth of field appreciably. Unlike lead lanthanum zirconate titanate crystal, spatial light modulator does not require high voltage.

Waveguide-excited fluorescence microarray

NASA Astrophysics Data System (ADS)

Sagarzazu, Gabriel; Bedu, Mélanie; Martinelli, Lucio; Ha, Khoi-Nguyen; Pelletier, Nicolas; Safarov, Viatcheslav I.; Weisbuch, Claude; Gacoin, Thierry; Benisty, Henri

2008-04-01

Signal-to-noise ratio is a crucial issue in microarray fluorescence read-out. Several strategies are proposed for its improvement. First, light collection in conventional microarrays scanners is quite limited. It was recently shown that almost full collection can be achieved in an integrated lens-free biosensor, with labelled species hybridizing practically on the surface of a sensitive silicon detector [L. Martinelli et al. Appl. Phys. Lett. 91, 083901 (2007)]. However, even with such an improvement, the ultimate goal of real-time measurements during hybridization is challenging: the detector is dazzled by the large fluorescence of labelled species in the solution. In the present paper we show that this unwanted signal can effectively be reduced if the excitation light is confined in a waveguide. Moreover, the concentration of excitation light in a waveguide results in a huge signal gain. In our experiment we realized a structure consisting of a high index sol-gel waveguide deposited on a low-index substrate. The fluorescent molecules deposited on the surface of the waveguide were excited by the evanescent part of a wave travelling in the guide. The comparison with free-space excitation schemes confirms a huge gain (by several orders of magnitude) in favour of waveguide-based excitation. An optical guide deposited onto an integrated biosensor thus combines both advantages of ideal light collection and enhanced surface localized excitation without compromising the imaging properties. Modelling predicts a negligible penalty from spatial cross-talk in practical applications. We believe that such a system would bring microarrays to hitherto unattained sensitivities.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Application of porous silicon in solar cell

NASA Astrophysics Data System (ADS)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan

Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can bemore » omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current.« less

Comparison of diffraction-enhanced computed tomography and monochromatic synchrotron radiation computed tomography of human trabecular bone.

PubMed

Connor, D M; Hallen, H D; Lalush, D S; Sumner, D R; Zhong, Z

2009-10-21

Diffraction-enhanced imaging (DEI) is an x-ray-based medical imaging modality that, when used in tomography mode (DECT), can generate a three-dimensional map of both the apparent absorption coefficient and the out-of-plane gradient of the index of refraction of the sample. DECT is known to have contrast gains over monochromatic synchrotron radiation CT (SRCT) for soft tissue structures. The goal of this experiment was to compare contrast-to-noise ratio (CNR) and resolution in images of human trabecular bone acquired using SRCT with images acquired using DECT. All images were acquired at the National Synchrotron Light Source (Upton, NY, USA) at beamline X15 A at an x-ray energy of 40 keV and the silicon [3 3 3] reflection. SRCT, apparent absorption DECT and refraction DECT slice images of the trabecular bone were created. The apparent absorption DECT images have significantly higher spatial resolution and CNR than the corresponding SRCT images. Thus, DECT will prove to be a useful tool for imaging applications in which high contrast and high spatial resolution are required for both soft tissue features and bone.

Silicone Migration From Baked-on Silicone Layers. Particle Characterization in Placebo and Protein Solutions.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2016-12-01

A significant number of therapeutic proteins are marketed as pre-filled syringes or other drug/device combination products and have been safely used in these formats for years. Silicone oil, which is used as lubricant, can migrate into the drug product and may interact with therapeutic proteins. In this study, particles in the size range of 0.2-5 μm and ≥1 μm as determined by resonant mass measurement and micro-flow imaging/light obscuration, respectively, resulted from silicone sloughing off the container barrel after agitation. The degree of droplet formation correlated well with the applied baked-on silicone levels of 13 μg and 94 μg per cartridge. Silicone migration was comparable in placebo, 2 mg/mL and 33 mg/mL IgG1 formulations containing 0.04% (w/v) polysorbate 20. Headspace substantially increased the formation of silicone droplets during agitation. The highest particle concentrations reached, however, were still very low compared to numbers described for spray-on siliconized containers. When applying adequate baked-on silicone levels below 100 μg, bake-on siliconization efficiently limits silicone migration into the drug product without compromising device functionality. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

PubMed

Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

2016-12-01

Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

Method and Apparatus for Improved Spatial Light Modulation

NASA Technical Reports Server (NTRS)

Soutar, Colin (Inventor); Juday, Richard D. (Inventor)

2000-01-01

A method and apparatus for modulating a light beam in an optical processing system is described. Preferably, an electrically-controlled polarizer unit and/or an analyzer unit are utilized in combination with a spatial light modulator and a controller. Preferably, the spatial light modulator comprises a pixelated birefringent medium such as a liquid crystal video display. The combination of the electrically controlled polarizer unit and analyzer unit make it simple and fast to reconfigure the modulation described by the Jones matrix of the spatial light modulator. A particular optical processing objective is provided to the controller. The controller performs calculations and supplies control signals to the polarizer unit, the analyzer unit, and the spatial light modulator in order to obtain the optical processing objective.

Method and Apparatus for Improved Spatial Light Modulation

NASA Technical Reports Server (NTRS)

Colin, Soutar (Inventor); Juday, Richard D. (Inventor)

1999-01-01

A method and apparatus for modulating a light beam in an optical processing system is described. Preferably, an electrically-controlled polarizer unit and/or an analyzer unit are utilized in combination with a spatial light modulator and a controller. Preferably, the spatial light modulator comprises a pixelated birefringent medium such as a liquid crystal video display. The combination of the electrically controlled polarizer unit and analyzer unit make it simple and fast to reconfigure the modulation described by the Jones matrix of the spatial light modulator. A particular optical processing objective is provided to the controller. The controller performs calculations and supplies control signals to the polarizer unit, the analyzer unit, and the spatial light modulator in order to obtain die optical processing objective.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

PubMed

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

High-Performance Ultrathin Organic-Inorganic Hybrid Silicon Solar Cells via Solution-Processed Interface Modification.

PubMed

Zhang, Jie; Zhang, Yinan; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan; Jia, Baohua

2017-07-05

Organic-inorganic hybrid solar cells based on n-type crystalline silicon and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) exhibited promising efficiency along with a low-cost fabrication process. In this work, ultrathin flexible silicon substrates, with a thickness as low as tens of micrometers, were employed to fabricate hybrid solar cells to reduce the use of silicon materials. To improve the light-trapping ability, nanostructures were built on the thin silicon substrates by a metal-assisted chemical etching method (MACE). However, nanostructured silicon resulted in a large amount of surface-defect states, causing detrimental charge recombination. Here, the surface was smoothed by solution-processed chemical treatment to reduce the surface/volume ratio of nanostructured silicon. Surface-charge recombination was dramatically suppressed after surface modification with a chemical, associated with improved minority charge-carrier lifetime. As a result, a power conversion efficiency of 9.1% was achieved in the flexible hybrid silicon solar cells, with a substrate thickness as low as ∼14 μm, indicating that interface engineering was essential to improve the hybrid junction quality and photovoltaic characteristics of the hybrid devices.

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

NASA Astrophysics Data System (ADS)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

The Study of the Interaction between Silica Filler and Silicone Rubber

NASA Astrophysics Data System (ADS)

Liu, Jiesheng; Gong, Xiaoqiang; Zhang, Rongtang

2018-01-01

The interaction between silica filler and silicone rubber was studied by swelling ratio, Kraus curve and crosslinking density test. The results showed that lower values of Vro/Vrf and swelling ratio in modified filler system suggests good filler-matrix interactions. The composites with silane coupling agents show higher crosslink-density compared that of untreated ones. In the light of the above statement, it can be concluded that modification of filler is the crucial factor in creating a good interaction between the filler and silicone rubber.

Resonant Raman scattering from silicon nanoparticles enhanced by magnetic response.

PubMed

Dmitriev, Pavel A; Baranov, Denis G; Milichko, Valentin A; Makarov, Sergey V; Mukhin, Ivan S; Samusev, Anton K; Krasnok, Alexander E; Belov, Pavel A; Kivshar, Yuri S

2016-05-05

Enhancement of optical response with high-index dielectric nanoparticles is attributed to the excitation of their Mie-type magnetic and electric resonances. Here we study Raman scattering from crystalline silicon nanoparticles and reveal that magnetic dipole modes have a much stronger effect on the scattering than electric modes of the same order. We demonstrate experimentally a 140-fold enhancement of the Raman signal from individual silicon spherical nanoparticles at the magnetic dipole resonance. Our results confirm the importance of the optically-induced magnetic response of subwavelength dielectric nanoparticles for enhancing light-matter interactions.

All-silicon-based nano-antennas for wavelength and polarization demultiplexing.

PubMed

Panmai, Mingcheng; Xiang, Jin; Sun, Zhibo; Peng, Yuanyuan; Liu, Hongfeng; Liu, Haiying; Dai, Qiaofeng; Tie, Shaolong; Lan, Sheng

2018-05-14

We propose an all-silicon-based nano-antenna that functions as not only a wavelength demultiplexer but also a polarization one. The nano-antenna is composed of two silicon cuboids with the same length and height but with different widths. The asymmetric structure of the nano-antenna with respect to the electric field of the incident light induced an electric dipole component in the propagation direction of the incident light. The interference between this electric dipole and the magnetic dipole induced by the magnetic field parallel to the long side of the cuboids is exploited to manipulate the radiation direction of the nano-antenna. The radiation direction of the nano-antenna at a certain wavelength depends strongly on the phase difference between the electric and magnetic dipoles interacting coherently, offering us the opportunity to realize wavelength demultiplexing. By varying the polarization of the incident light, the interference of the magnetic dipole induced by the asymmetry of the nano-antenna and the electric dipole induced by the electric field parallel to the long side of the cuboids can also be used to realize polarization demultiplexing in a certain wavelength range. More interestingly, the interference between the dipole and quadrupole modes of the nano-antenna can be utilized to shape the radiation directivity of the nano-antenna. We demonstrate numerically that radiation with adjustable direction and high directivity can be realized in such a nano-antenna which is compatible with the current fabrication technology of silicon chips.

Absolute flatness measurements of silicon mirrors by a three-intersection method by near-infrared interferometry

PubMed Central

2013-01-01

Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer. The interferometer was constructed using a near-infrared laser diode with a 1,310-nm wavelength light where the silicon plane mirror is transparent. The height differences at the coordinate values between the absolute line profiles by the three-intersection method have been evaluated. The height differences of the three flats were 4.5 nm or less. The three-intersection method using the near-infrared interferometer was useful for measuring the absolute flatness of the silicon plane mirrors. PMID:23758916

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon

NASA Astrophysics Data System (ADS)

Diener, J.; Künzner, N.; Kovalev, D.; Gross, E.; Koch, F.; Fujii, M.

2003-05-01

Electro-chemical etching of heavily doped, (110) oriented, p+ (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.

Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Oh, Kyonghwan; Kwon, Oh-Kyong

2012-03-01

A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces

NASA Astrophysics Data System (ADS)

Long, Yun; Wang, Jian

2014-06-01

Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide (``controlling'' waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the ``controlling'' waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

Maturation and survival of Cronobacter biofilms on silicone, polycarbonate, and stainless steel after UV light and ethanol immersion treatments.

PubMed

Jo, Seo-Hee; Baek, Seung-Bum; Ha, Ji-Hyoung; Ha, Sang-Do

2010-05-01

Cronobacter sakazakii cells in biofilms formed on silicone, polycarbonate, and stainless steel coupons immersed in reconstituted powdered infant milk formula were treated with ethanol (10 to 70%) and UV light (12 to 2,160 mW.s/cm(2)) as antibacterial treatments. Biofilm maturation curves were determined after immersion at 25 degrees C for up to 144 h. Populations increased after subsequent immersion at 25 degrees C for 24 h in reconstituted powdered infant milk formula to the respective maximum levels of 7.96, 7.91, and 6.99 log CFU per coupon. Populations attached to silicone and polycarbonate surfaces to a greater extent than to stainless steel (P < 0.05). Treatment with 10% ethanol did not cause a significant decrease in the level of C. sakazakii, but treatment with 30, 40, and 50% ethanol reduced the levels to approximately 1.73, 3.02, and 4.17 log CFU per coupon, respectively. C. sakazakii was not detected on any coupon after treatment with 70% ethanol or 2,160 mW.s/cm(2) UV light. A synergistic effect of sequential ethanol and UV treatments was not observed.

Photonic zero mode in a non-Hermitian photonic lattice.

PubMed

Pan, Mingsen; Zhao, Han; Miao, Pei; Longhi, Stefano; Feng, Liang

2018-04-03

Zero-energy particles (such as Majorana fermions) are newly predicted quasiparticles and are expected to play an important role in fault-tolerant quantum computation. In conventional Hermitian quantum systems, however, such zero states are vulnerable and even become vanishing if couplings with surroundings are of the same topological nature. Here we demonstrate a robust photonic zero mode sustained by a spatial non-Hermitian phase transition in a parity-time (PT) symmetric lattice, despite the same topological order across the entire system. The non-Hermitian-enhanced topological protection ensures the reemergence of the zero mode at the phase transition interface when the two semi-lattices under different PT phases are decoupled effectively in their real spectra. Residing at the midgap level of the PT symmetric spectrum, the zero mode is topologically protected against topological disorder. We experimentally validated the robustness of the zero-energy mode by ultrafast heterodyne measurements of light transport dynamics in a silicon waveguide lattice.

Binocular adaptive optics visual simulator.

PubMed

Fernández, Enrique J; Prieto, Pedro M; Artal, Pablo

2009-09-01

A binocular adaptive optics visual simulator is presented. The instrument allows for measuring and manipulating ocular aberrations of the two eyes simultaneously, while the subject performs visual testing under binocular vision. An important feature of the apparatus consists on the use of a single correcting device and wavefront sensor. Aberrations are controlled by means of a liquid-crystal-on-silicon spatial light modulator, where the two pupils of the subject are projected. Aberrations from the two eyes are measured with a single Hartmann-Shack sensor. As an example of the potential of the apparatus for the study of the impact of the eye's aberrations on binocular vision, results of contrast sensitivity after addition of spherical aberration are presented for one subject. Different binocular combinations of spherical aberration were explored. Results suggest complex binocular interactions in the presence of monochromatic aberrations. The technique and the instrument might contribute to the better understanding of binocular vision and to the search for optimized ophthalmic corrections.

A novel plasmonic interferometry and the potential applications

NASA Astrophysics Data System (ADS)

Ali, J.; Pornsuwancharoen, N.; Youplao, P.; Aziz, M. S.; Chiangga, S.; Jaglan, J.; Amiri, I. S.; Yupapin, P.

2018-03-01

In this article, we have proposed the plasmonic interferometry concept and analytical details given. By using the conventional optical interferometry, which can be simply calculated by using the relationship between the electric field and electron mobility, the interference mobility visibility (fringe visibility) can be observed. The surface plasmons in the sensing arm of the Michelson interferometer is constructed by the stacked layers of the silicon-graphene-gold, allows to characterize the spatial resolution of light beams in terms of the electron mobility down to 100-nm scales, with measured coherence lengths as low as ∼100 nm for an incident wavelength of 1550 nm. We have demonstrated a compact plasmonic interferometer that can apply to the electron mean free paths measurement, from which the precise determination can be used for the high-resolution mean free path measurement and sensing applications. This system provides the practical simulation device parameters that can be fabricated and tested by the experimental platform.

Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

PubMed

Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

2017-08-01

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Seamless lamination of a concave-convex architecture with single-layer graphene.

PubMed

Park, Ji-Hoon; Lim, Taekyung; Baik, Jaeyoon; Seo, Keumyoung; Moon, Youngkwon; Park, Noejung; Shin, Hyun-Joon; Kwak, Sang Kyu; Ju, Sanghyun; Ahn, Joung Real

2015-11-21

Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.

QDIRT: Quantitative Direct and Indirect Testing of Sudomotor Function

PubMed Central

Gibbons, Christopher H.; Illigens, Ben MW; Centi, Justin; Freeman, Roy

2011-01-01

Objective To develop a novel assessment of sudomotor function. Background Post-ganglionic sudomotor function is currently evaluated using quantitative sudomotor axon reflex testing (QSART) or silicone impressions. We hypothesize that high-resolution digital photography has advanced sufficiently to allow quantitative direct and indirect testing of sudomotor function (QDIRT) with spatial and temporal resolution comparable to these techniques. Methods Sweating in 10 humans was stimulated on both forearms by iontophoresis of 10% acetylcholine. Silicone impressions were made and topical indicator dyes were digitally photographed every 15 seconds for 7 minutes after iontophoresis. Sweat droplets were quantified by size, location and percent surface area. Each test was repeated 8 times in each subject on alternating arms over 2 months. Another 10 subjects had silicone impressions, QDIRT and QSART performed on the dorsum of the right foot. Results The percent area of sweat photographically imaged correlated with silicone impressions at 5 minutes on the forearm (r = 0.92, p<0.01) and dorsal foot (r=0.85, p<0.01). The number of sweat droplets assessed with QDIRT correlated with the silicone impression although the droplet number was lower (162±28 vs. 341±56, p<0.01; r =0.83, p<0.01). QDIRT and QSART sudomotor assessments measured at the dorsum of the foot correlated (sweat response (r=0.63, p<0.05) and sweat onset latency (r=0.52, p<0.05). Conclusions QDIRT measured both the direct and indirect sudomotor response with spatial resolution similar to silicone impressions, and with temporal resolution that is similar to QSART. QDIRT provides a novel tool for the evaluation of post-ganglionic sudomotor function. PMID:18541883