Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

1982-01-01

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratory test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratary test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Silicon nanostructure arrays prepared by single step metal assisted chemical etching from single crystal wafer

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan; Das, Debajyoti

2018-04-01

Arrays of silicon nanostructures have been produced by single step Metal Assisted Chemical Etching (MACE) of single crystal Si-wafers at room temp and normal atmospheric condition. By studying optical and structural properties of the silicon nanowire like structures synthesized by Ag catalyst assisted chemical etching, a significant change in the reflectance spectra has been obtained leading to a gross reduction in reflectance from ˜31% to less than 1%. In comparison with bulk c-Si, the surface areas of the nanostructured samples have been increased significantly with the etching time, leading to an efficient absorption of light, favorable for photovoltaic applications.

Method of fabricating a PbS-PbSe IR detector array

NASA Technical Reports Server (NTRS)

Barrett, John R. (Inventor)

1987-01-01

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

NASA Astrophysics Data System (ADS)

Atanov, N.; Baranov, V.; Budagov, J.; Davydov, Yu. I.; Glagolev, V.; Tereshchenko, V.; Usubov, Z.; Cervelli, F.; Di Falco, S.; Donati, S.; Morescalchi, L.; Pedreschi, E.; Pezzullo, G.; Raffaelli, F.; Spinella, F.; Colao, F.; Cordelli, M.; Corradi, G.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Happacher, F.; Martini, M.; Miscetti, S.; Ricci, M.; Saputi, A.; Sarra, I.; Echenard, B.; Hitlin, D. G.; Hu, C.; Miyashita, T.; Porter, F.; Zhang, L.; Zhu, R.-Y.; Grancagnolo, F.; Tassielli, G.; Murat, P.

2018-02-01

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeV measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.

Development of a Broad High-Energy Gamma-Ray Telescope using Silicon Strip Detectors

NASA Technical Reports Server (NTRS)

Michelson, Peter F.

1998-01-01

The research effort has led to the development and demonstration of technology to enable the design and construction of a next-generation high-energy gamma-ray telescope that operates in the pair-production regime (E greater than 10 MeV). In particular, the technology approach developed is based on silicon-strip detector technology. A complete instrument concept based on this technology for the pair-conversion tracker and the use of CsI(T1) crystals for the calorimeter is now the baseline instrument concept for the Gamma-ray Large Area Space Telescope (GLAST) mission. GLAST is NASA's proposed high-energy gamma-ray mission designed to operate in the energy range from 10 MeV to approximately 300 GeV. GLAST, with nearly 100 times the sensitivity of EGRET, operates through pair conversion of gamma-rays and measurement of the direction and energy of the resulting e (+) - e (-) shower. The baseline design, developed with support from NASA includes a charged particle anticoincidence shield, a tracker/converter made of thin sheets of high-Z material interspersed with Si strip detectors, a CsI calorimeter and a programmable data trigger and acquisition system. The telescope is assembled as an array of modules or towers. Each tower contains elements of the tracker, calorimeter, and anticoincidence system. As originally proposed, the telescope design had 49 modules. In the more optimized design that emerged at the end of the grant period the individual modules are larger and the total number in the GLAST array is 25. Also the calorimeter design was advanced substantially to the point that it has a self-contained imaging capability, albeit much cruder than the tracker.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

DOE PAGES

Atanov, N.; Baranov, V.; Budagov, J.; ...

2017-12-21

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm 3, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeVmore » measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.« less

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanov, N.; Baranov, V.; Budagov, J.

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm 3, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeVmore » measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.« less

Micromachined Thermoelectric Sensors and Arrays and Process for Producing

NASA Technical Reports Server (NTRS)

Foote, Marc C. (Inventor); Jones, Eric W. (Inventor); Caillat, Thierry (Inventor)

2000-01-01

Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4 x 10(exp 9) cmHz(exp 1/2)/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi-Te and Bi-Sb-Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2 x 10(exp 9) cm Hz(exp 1/2)/W for 83 ms response times.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

1988-11-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

PubMed Central

2013-01-01

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

Low-background detector arrays for infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Estrada, J. A.; Goebel, J. H.; Mckelvey, M. E.; Mckibbin, D. D.; Mcmurray, R. E., Jr.; Weber, T. T.

1989-01-01

The status of a program which develops and characterizes integrated infrared (IR) detector array technology for space astronomical applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, coupled to silicon readout electronics. Low-background laboratory test results include measurements of responsivity, noise, dark current, temporal response, and the effects of gamma-radiation. In addition, successful astronomical imagery has been obtained on some arrays from this program. These two aspects of the development combine to demonstrate the strong potential for integrated array technology for IR space astronomy.

Measurement of the time resolution of small SiPM-based scintillation counters

NASA Astrophysics Data System (ADS)

Kravchenko, E. A.; Porosev, V. V.; Savinov, G. A.

2017-12-01

In this research, we evaluated the timing resolution of SiPM-based scintillation detector on a 1-GeV electron beam "extracted" from VEPP-4M. We tested small scintillation crystals of pure CsI, YAP, LYSO, and LFS-3 with HAMAMATSU S10362-33-025C and S13360-3050CS. The CsI scintillator together with HAMAMATSU S13360-3050CS demonstrated the best results. Nevertheless, the achieved time resolution of ~80 ps (RMS) relates mainly to the photodetector itself. It makes the silicon photomultiplier an attractive candidate to replace other devices in applications where sub-nanosecond accuracy is required.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryemadhi, A.; Barner, L.; Grove, A.

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE PAGES

Kryemadhi, A.; Barner, L.; Grove, A.; ...

2017-10-31

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

CAKE: the coincidence array for K600 experiments

NASA Astrophysics Data System (ADS)

Adsley, P.; Neveling, R.; Papka, P.; Dyers, Z.; Brümmer, J. W.; Diget, C. Aa.; Hubbard, N. J.; Li, K. C. W.; Long, A.; Marin-Lambarri, D. J.; Pellegri, L.; Pesudo, V.; Pool, L. C.; Smit, F. D.; Triambak, S.

2017-02-01

The combination of a magnetic spectrometer and ancillary detectors such as silicon detectors is a powerful tool for the study of nuclear reactions and nuclear structure. This paper discusses the recently commissioned silicon array called the "CAKE" which is designed for use with the K600 magnetic spectrometer at iThemba LABS.

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

DOEpatents

Li, Zheng; Chen, Wei

2016-07-05

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

DEATH-STAR: Silicon and Photovoltaic Fission Fragment Detector Arrays for Light-Ion Induced Fission Correlation Studies

NASA Astrophysics Data System (ADS)

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; Jovanovic, I.

2017-05-01

The Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE - E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution of 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.

DEATH-STAR: Silicon and photovoltaic fission fragment detector arrays for light-ion induced fission correlation studies

DOE PAGES

Koglin, J. D.; Burke, J. T.; Fisher, S. E.; ...

2017-02-20

Here, the Direct Excitation Angular Tracking pHotovoltaic-Silicon Telescope ARray (DEATH-STAR) combines a series of 12 silicon detectors in a ΔE–E configuration for charged particle identification with a large-area array of 56 photovoltaic (solar) cells for detection of fission fragments. The combination of many scattering angles and fission fragment detectors allows for an angular-resolved tool to study reaction cross sections using the surrogate method, anisotropic fission distributions, and angular momentum transfers through stripping, transfer, inelastic scattering, and other direct nuclear reactions. The unique photovoltaic detectors efficiently detect fission fragments while being insensitive to light ions and have a timing resolution ofmore » 15.63±0.37 ns. Alpha particles are detected with a resolution of 35.5 keV 1σ at 7.9 MeV. Measured fission fragment angular distributions are also presented.« less

Cross-section measurement of 7Be + d and 7Li + d with ANASEN* and its implication in the Big Bang Nucleosynthesis

NASA Astrophysics Data System (ADS)

Rijal, Nabin; Wiedenhover, Ingo; Baby, L. T.; Blackmon, J. C.; Rogachev, G.

2017-09-01

Astrophysically observed 7Li is 3 -4 times less than predicted amount by current models of Standard Big Bang Nucleosynthesis (SBBN). The nuclear reaction 7Be + d at energies relevant to SBBN, has been discussed as a possible means to destroy mass-7 nuclei. We investigated the 7Be + d and it's mirror nuclear reaction 7Li + d at SBBN energies using a radioactive 7Be and stable 7Li beam both in deuterium gas target inside ANASEN at Florida State University. ANASEN is an active target detector system which tracks the charged particles using a position sensitive proportional counter and 24-SX3 and 4-QQQ position sensitive Silicon detectors, all backed up by CsI detectors. ANASEN has wide angular coverage. The experiment measures a continuous excitation function by slowing down the beam in the target gas down to zero energy by using a single beam energy. Our set-up provides a high detection efficiency for all relevant reaction channels including (d , p) , (d , α) and/or direct breakup that can destroy mass-7 nuclei in contrast to previous measurements. The preliminary results of these experiments along with details of ANASEN detector will be presented. *ANASEN: Array for Nuclear Astrophysics and Structure with Exotic Nuclei. This work is supported by the US NSF MRI program, Grant No. PHY-0821308 and NSF Grant PHY-1401574.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

PubMed Central

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P.; Zolliker, Peter

2016-01-01

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed. PMID:26861341

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

PubMed

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

2016-02-06

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

A 2D silicon detector array for quality assurance in small field dosimetry: DUO.

PubMed

Shukaili, Khalsa Al; Petasecca, Marco; Newall, Matthew; Espinoza, Anthony; Perevertaylo, Vladimir L; Corde, Stéphanie; Lerch, Michael; Rosenfeld, Anatoly B

2017-02-01

Nowadays, there are many different applications that use small fields in radiotherapy treatments. The dosimetry of small radiation fields is not trivial due to the problems associated with lateral disequilibrium and source occlusion and requires reliable quality assurance (QA). Ideally such a QA tool should provide high spatial resolution, minimal beam perturbation and real time fast measurements. Many different types of silicon diode arrays are used for QA in radiotherapy; however, their application in small filed dosimetry is limited, in part, due to a lack of spatial resolution. The Center of Medical Radiation Physics (CMRP) has developed a new generation of a monolithic silicon diode array detector that will be useful for small field dosimetry in SRS/SRT. The objective of this study is to characterize a monolithic silicon diode array designed for dosimetry QA in SRS/SRT named DUO that is arranged as two orthogonal 1D arrays with 0.2 mm pitch. DUO is two orthogonal 1D silicon detector arrays in a monolithic crystal. Each orthogonal array contains 253 small pixels with size 0.04 × 0.8 mm 2 and three central pixels are with a size of 0.18 × 0.18 mm 2 each. The detector pitch is 0.2 mm and total active area is 52 × 52 mm 2 . The response of the DUO silicon detector was characterized in terms of dose per pulse, percentage depth dose, and spatial resolution in a radiation field incorporating high gradients. Beam profile of small fields and output factors measured on a Varian 2100EX LINAC in a 6 MV radiation fields of square dimensions and sized from 0.5 × 0.5 cm 2 to 5 × 5 cm 2 . The DUO response was compared under the same conditions with EBT3 films and an ionization chamber. The DUO detector shows a dose per pulse dependence of 5% for a range of dose rates from 2.7 × 10 -4 to 1.2 × 10 -4 Gy/pulse and 23% when the rate is further reduced to 2.8 × 10 -5 Gy/pulse. The percentage depth dose measured to 25 cm depth in solid water phantom beyond the surface and for a field size of 10 × 10 cm 2 agrees with that measured using a Markus IC within 1.5%. The beam profiles in both X and Y orthogonal directions showed a good match with EBT3 film, where the FWHM agreed within 1% and penumbra widths within 0.5 mm. The effect of an air gap above the DUO detector has also been studied. The output factor for field sizes ranging from 0.5 × 0.5 cm 2 to 5 × 5 cm 2 measured by the DUO detector with a 0.5 mm air gap above silicon surface agrees with EBT3 film and MOSkin detectors within 1.8%. The CMRP's monolithic silicon detector array, DUO, is suitable for SRS/SRT dosimetry and QA because of its very high spatial resolution (0.2 mm) and real time operation. © 2016 American Association of Physicists in Medicine.

Design optimization for a wearable, gamma-ray and neutron sensitive, detector array with directionality estimation

NASA Astrophysics Data System (ADS)

Ayaz-Maierhafer, Birsen; Britt, Carl G.; August, Andrew J.; Qi, Hairong; Seifert, Carolyn E.; Hayward, Jason P.

2017-10-01

In this study, we report on a constrained optimization and tradeoff study of a hybrid, wearable detector array having directional sensing based upon gamma-ray occlusion. One resulting design uses CLYC detectors while the second feasibility design involves the coupling of gamma-ray-sensitive CsI scintillators and a rubber LiCaAlF6 (LiCAF) neutron detector. The detector systems' responses were investigated through simulation as a function of angle in a two-dimensional plane. The expected total counts, peak-to-total ratio, directionality performance, and detection of 40 K for accurate gain stabilization were considered in the optimization. Source directionality estimation was investigated using Bayesian algorithms. Gamma-ray energies of 122 keV, 662 keV, and 1332 keV were considered. The equivalent neutron capture response compared with 3 He was also investigated for both designs.

Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

PubMed Central

Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

2015-01-01

Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells. PMID:28793457

Characterization of silicon heterojunctions for solar cells

PubMed Central

2011-01-01

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision. PMID:21711658

CsI Calorimeter for a Compton-Pair Telescope

NASA Astrophysics Data System (ADS)

Grove, Eric J.

We propose to build and test a hodoscopic CsI(Tl) scintillating-crystal calorimeter for a medium-energy γ-ray Compton and pair telescope. The design and technical approach for this calorimeter relies deeply on heritage from the Fermi LAT CsI Calorimeter, but it dramatically improves the low-energy performance of that design by reading out the scintillation light with silicon photomultipliers (SiPMs), making the technology developed for Fermi applicable in the Compton regime. While such a hodoscopic calorimeter is useful for an entire class of medium-energy γ-ray telescope designs, we propose to build it explicitly to support beam tests and balloon flight of the Proto-ComPair telescope, the development and construction of which was funded in a four-year APRA program beginning in 2015 ("ComPair: Steps to a Medium Energy γ-ray Mission" with PI J. McEnery of GSFC). That award did not include funding for its CsI calorimeter subsystem, and this proposal is intended to cover that gap. ComPair is a MIDEX-class instrument concept to perform a high-sensitivity survey of the γ-ray sky from 0.5 MeV to 500 MeV. ComPair is designed to provide a dramatic increase in sensitivity relative to previous instruments in this energy range (predominantly INTEGRAL/SPI and Compton COMPTEL), with the same transformative sensitivity increase - and corresponding scientific return- that the Fermi Large Area Telescope provided relative to Compton EGRET. To enable transformative science over a broad range of MeV energies and with a wide field of view, ComPair is a combined Compton telescope and pair telescope employing a silicon-strip tracker (for Compton scattering and pair conversion and tracking) and a solid-state CdZnTe calorimeter (for Compton absorption) and CsI calorimeter (for pair calorimetry), surrounded by a plastic scintillator anti-coincidence detector. Under the current proposal, we will complete the detailed design, assembly, and test of the CsI calorimeter for the risk-reduction prototype telescope, Proto-ComPair. We will: 1. Purchase CsI(Tl) crystals, Silicon Photomultipliers (SiPMs), and components for the analog and digital readout of the SiPMs; 2. Assemble and test Crystal Detector Elements (CDEs) from crystals, SiPMs and optical wrap; 3. Assemble and test analog and digital front-end and readout control boards; 4. Fabricate the mechanical structure that supports and contains the CDEs and electronics boards; and 5. Assemble and test the CsI calorimeter, and integrate it with the remainder of the Proto-ComPair subsystems. The PI team for this proposal conceived, designed, developed, assembled, tested, and currently operates the LAT calorimeter and is uniquely qualified to leverage the experience gained from that effort for ComPair.

Monolithic short wave infrared (SWIR) detector array

NASA Technical Reports Server (NTRS)

1983-01-01

A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

Development and Testing of the AMEGO Silicon Tracker System

NASA Astrophysics Data System (ADS)

Griffin, Sean; Amego Team

2018-01-01

The All-sky Medium Energy Gamma-ray Observatory (AMEGO) is a probe-class mission in consideration for the 2020 decadal review designed to operate at energies from ˜ 200 keV to > 10 GeV. Operating a detector in this energy regime is challenging due to the crossover in the interaction cross-section for Compton scattering and pair production. AMEGO is made of four major subsystems: a plastic anticoincidence detector for rejecting cosmic-ray events, a silicon tracker for measuring the energies of Compton scattered electrons and pair-production products, a CZT calorimeter for measuring the energy and location of Compton scattered photons, and a CsI calorimeter for measuring the energy of the pair-production products at high energies. The tracker comprises layers of dual-sided silicon strip detectors which provide energy and localization information for Compton scattering and pair-production events. A prototype tracker system is under development at GSFC; in this contribution we provide details on the verification, packaging, and testing of the prototype tracker, as well as present plans for the development of the front-end electronics, beam tests, and a balloon flight.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

1988-01-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

The hyperion particle-γ detector array

DOE PAGES

Hughes, R. O.; Burke, J. T.; Casperson, R. J.; ...

2017-03-08

Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. In conclusion, this article discusses the features of the array and presents data collected with the array in the commissioning experiment.

Si:As BIB detector arrays

NASA Technical Reports Server (NTRS)

Bharat, R.; Petroff, M. D.; Speer, J. J.; Stapelbroek, M. G.

1986-01-01

Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

High-performance linear arrays of YBa2Cu3O7 superconducting infrared microbolometers on silicon

NASA Astrophysics Data System (ADS)

Johnson, Burgess R.; Foote, Marc C.; Marsh, Holly A.

1995-06-01

Single detectors and linear arrays of microbolometers utilizing the superconducting transition edge of YBa(subscript 2)Cu(subscript 3)O(subscript 7) have been fabricated by micromachining on silicon wafers. A D* of 8 +/- 2 X 10(superscript 9) cm Hz(superscript 1/2)/watt has been measured on a single detector. This is the highest D* reported on any superconducting microbolometer operating at temperatures higher than about 70 K. The NEP of this device was 1.5 X 10(superscript -12) watts/Hz(superscript HLF) at 2 Hz, at a temperature of 80.7 K. The thermal time constant was 105 msec, and the detector area was 140 micrometers X 105 micrometers . The use of batch silicon processing makes fabrication of linear arrays of these detectors relatively straightforward. The measured responsivity of detectors in one such array varied by less than 20% over the 6 mm length of the 64-element linear array. This measurement shows that good uniformity can be achieved at a single operating temperature in a superconductor microbolometer array, even when the superconducting resistive transition is a sharp function of temperature. The thermal detection mechanism of these devices gives them broadband response. This makes them especially useful at long wavelengths (e.g. (lambda) > 20 micrometers ), where they provide very high sensitivity at relatively high operating temperatures.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

NASA Astrophysics Data System (ADS)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

2018-05-01

ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

Demonstration of Lasercom and Spatial Tracking with a Silicon Geiger-Mode APD Array

DTIC Science & Technology

2016-02-26

standardized pixel mask as described in the previous paragraph disabling 167 of the 1024 detectors in the array , this gives an absolute maximum rate...number of elements in an array based detector .5 In this paper, we present the results of photon-counting communication tests based on an arrayed ...semiconductor photon-counting detector .6 The array also has the ability to sense the spatial distribution of the received light giving it the potential to act

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

NASA Technical Reports Server (NTRS)

Jones, B.

1985-01-01

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

High-resolution x-ray imaging using a structured scintillator.

PubMed

Hormozan, Yashar; Sychugov, Ilya; Linnros, Jan

2016-02-01

In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator array to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.

Solid-state flat panel imager with avalanche amorphous selenium

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

2016-03-01

Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays

NASA Astrophysics Data System (ADS)

Nikzad, Shouleh; Jewell, April D.; Hoenk, Michael E.; Jones, Todd J.; Hennessy, John; Goodsall, Tim; Carver, Alexander G.; Shapiro, Charles; Cheng, Samuel R.; Hamden, Erika T.; Kyne, Gillian; Martin, D. Christopher; Schiminovich, David; Scowen, Paul; France, Kevin; McCandliss, Stephan; Lupu, Roxana E.

2017-07-01

Exciting concepts are under development for flagship, probe class, explorer class, and suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will depend on high-performance silicon detector arrays being delivered affordably and in high numbers. To that end, we have advanced delta-doping technology to high-throughput and high-yield wafer-scale processing, encompassing a multitude of state-of-the-art silicon-based detector formats and designs. We have embarked on a number of field observations, instrument integrations, and independent evaluations of delta-doped arrays. We present recent data and innovations from JPL's Advanced Detectors and Systems Program, including two-dimensional doping technology, JPL's end-to-end postfabrication processing of high-performance UV/optical/NIR arrays and advanced coatings for detectors. While this paper is primarily intended to provide an overview of past work, developments are identified and discussed throughout. Additionally, we present examples of past, in-progress, and planned observations and deployments of delta-doped arrays.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

NASA Astrophysics Data System (ADS)

Horisberger, R.

1990-03-01

It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking.

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

PubMed

He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

2015-06-23

Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

NASA Technical Reports Server (NTRS)

Cochran, A. L.

1984-01-01

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

Imaging responses of on-site CsI and Gd2O2S flat-panel detectors: Dependence on the tube voltage

NASA Astrophysics Data System (ADS)

Jeon, Hosang; Chung, Myung Jin; Youn, Seungman; Nam, Jiho; Lee, Jayoung; Park, Dahl; Kim, Wontaek; Ki, Yongkan; Kim, Ho Kyung

2015-07-01

One of the emerging issues in radiography is low-dose imaging to minimize patient's exposure. The scintillating materials employed in most indirect flat-panel detectors show a drastic change of X-ray photon absorption efficiency around their K-edge energies that consequently affects image quality. Using various tube voltages, we investigated the imaging performance of most popular scintillators: cesium iodide (CsI) and gadolinium oxysulfide (Gd2O2S). The integrated detective quantum efficiencies (iDQE) of four detectors installed in the same hospital were evaluated according to the standardized procedure IEC 62220-1 at tube voltages of 40 - 120 kVp. The iDQE values of the Gd2O2S detectors were normalized by those of CsI detectors to exclude the effects of image postprocessing. The contrast-to-noise ratios (CNR) were also evaluated by using an anthropomorphic chest phantom. The iDQE of the CsI detector outperformed that of the Gd2O2S detector over all tube voltages. Moreover, we noted that the iDQE of the Gd2O2S detectors quickly rolled off with decreasing tube voltage under 70 kVp. The CNRs of the two scintillators were similar at 120 kVp. At 60 kVp, however, the CNR of Gd2O2S was about half that of CsI. Compared to the Gd2O2S detectors, variations in the DQE performance of the CsI detectors were relatively immune to variations in the applied tube voltages. Therefore, we claim that Gd2O2S detectors are inappropriate for use in low-tube-voltage imaging (e.g., extremities and pediatrics) with low patient exposure.

A depth-of-interaction PET detector using mutual gain-equalized silicon photomultiplier

DOE Office of Scientific and Technical Information (OSTI.GOV)

W. Xi, A.G, Weisenberger, H. Dong, Brian Kross, S. Lee, J. McKisson, Carl Zorn

We developed a prototype high resolution, high efficiency depth-encoding detector for PET applications based on dual-ended readout of LYSO array with two silicon photomultipliers (SiPMs). Flood images, energy resolution, and depth-of-interaction (DOI) resolution were measured for a LYSO array - 0.7 mm in crystal pitch and 10 mm in thickness - with four unpolished parallel sides. Flood images were obtained such that individual crystal element in the array is resolved. The energy resolution of the entire array was measured to be 33%, while individual crystal pixel elements utilizing the signal from both sides ranged from 23.3% to 27%. By applyingmore » a mutual-gain equalization method, a DOI resolution of 2 mm for the crystal array was obtained in the experiments while simulations indicate {approx}1 mm DOI resolution could possibly be achieved. The experimental DOI resolution can be further improved by obtaining revised detector supporting electronics with better energy resolutions. This study provides a detailed detector calibration and DOI response characterization of the dual-ended readout SiPM-based PET detectors, which will be important in the design and calibration of a PET scanner in the future.« less

Silicon-based antenna-coupled polarization-sensitive millimeter-wave bolometer arrays for cosmic microwave background instruments

NASA Astrophysics Data System (ADS)

Rostem, Karwan; Ali, Aamir; Appel, John W.; Bennett, Charles L.; Brown, Ari; Chang, Meng-Ping; Chuss, David T.; Colazo, Felipe A.; Costen, Nick; Denis, Kevin L.; Essinger-Hileman, Tom; Hu, Ron; Marriage, Tobias A.; Moseley, Samuel H.; Stevenson, Thomas R.; U-Yen, Kongpop; Wollack, Edward J.; Xu, Zhilei

2016-07-01

We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant, characteristics that are critical for realizing efficient and uniform superconducting microwave circuits. An additional advantage of this material is its low specific heat. In a detector pixel, two Transition-Edge Sensor (TES) bolometers are antenna-coupled to in-band radiation via a symmetric planar orthomode transducer (OMT). Each orthogonal linear polarization is coupled to a separate superconducting microstrip transmission line circuit. On-chip filtering is employed to both reject out-of-band radiation from the upper band edge to the gap frequency of the niobium superconductor, and to flexibly define the bandwidth for each TES to meet the requirements of the application. The microwave circuit is compatible with multi-chroic operation. Metalized silicon platelets are used to define the backshort for the waveguide probes. This micro-machined structure is also used to mitigate the coupling of out-of-band radiation to the microwave circuit. At 40 GHz, the detectors have a measured efficiency of ˜90%. In this paper, we describe the development of the 90 GHz detector arrays that will be demonstrated using the Cosmology Large Angular Scale Surveyor (CLASS) ground-based telescope.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hughes, R. O.; Burke, J. T.; Casperson, R. J.

Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. In conclusion, this article discusses the features of the array and presents data collected with the array in the commissioning experiment.

Fast CsI-phoswich detector

DOEpatents

Langenbrunner, James R.

1996-01-01

An improved phoswich radiation detector used pure CsI crystal and a fast plastic scintillator and a single photomultiplier tube. The plastic is arranged to receive incident radiation, and that which passed through then strikes the CsI crystal. Scintillation light from both the plastic and CsI crystal are applied to the photomultiplier tube, with the light from the plastic passing through the crystal without absorption therein. Electronics are provided for analyzing the output of the photomultiplier tube to discriminate responses due to the plastic and the CsI crystal, through short gate and long gate integration, to produce results which are indicative of the characteristics of the different types of incident radiation, even in the presence of large amounts of radiation. The phoswich detector has excellent timing resolution. The scintillators of the CsI- phoswich were chosen for their fast risetimes, of about 3 ns for NE102A, and 30 ns for the pure CsI.

Fast CsI-phoswich detector

DOEpatents

Langenbrunner, J.R.

1996-05-07

An improved phoswich radiation detector used pure CsI crystal and a fast plastic scintillator and a single photomultiplier tube. The plastic is arranged to receive incident radiation, and that which passed through then strikes the CsI crystal. Scintillation light from both the plastic and CsI crystal are applied to the photomultiplier tube, with the light from the plastic passing through the crystal without absorption therein. Electronics are provided for analyzing the output of the photomultiplier tube to discriminate responses due to the plastic and the CsI crystal, through short gate and long gate integration, to produce results which are indicative of the characteristics of the different types of incident radiation, even in the presence of large amounts of radiation. The phoswich detector has excellent timing resolution. The scintillators of the CsI- phoswich were chosen for their fast risetimes, of about 3 ns for NE102A, and 30 ns for the pure CsI. 5 figs.

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

2010-01-01

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and far-infrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5 micrometer thick silicon membrane, and 380 micrometer thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

2010-01-01

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5µm thick silicon membrane, and 380µm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

Mechanical Designs and Developement of Advanced ACT: A Transfomative Upgrade to the ACTPol Receiver on the Atacama Cosmology Telescope.

NASA Astrophysics Data System (ADS)

Ward, Jonathan; Advanced ACT Collaboration, NASA Space Technology Research Fellowship

2017-06-01

The Atacama Cosmology Telescope is a six-meter diameter telescope located at 17,000 feet (5,200 meters) on Cerro Toco in the Andes Mountains of northern Chile. The next generation Advanced ACT (AdvACT) experiment is currently underway and will consist of three multichroic TES bolometer arrays operating together, totaling 5800 detectors on the sky. Each array will be sensitive to two frequency bands: a high frequency (HF) array at 150 and 230 GHz, two middle frequency (MF) arrays at 90 and 150 GHz, and a low frequency (LF) array at 28 and 41 GHz. The AdACT detector arrays will feature a revamped design when compared to ACTPol, including a transition to 150mm wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors consists of a feedhorn array of stacked silicon wafers which form a corrugated profile leading to each pixel. This is then followed by a four-piece detector stack assembly of silicon wafers which includes a waveguide interface plate, detector wafer, backshort cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured out of gold-plated, high purity copper. In addition to the detector array assembly, the array package also encloses the majority of our readout electronics. We present the full mechanical design of the AdvACT HF and MF detector array packages along with a detailed look at the detector array assemblies. We also highlight the use of continuously rotating warm half-wave plates (HWPs) at the front of the AdvACT receiver. We review the design of the rotation system and also early pipeline data analysis results. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT instruments with pre-existing ACTPol infrastructure.

Imaging antenna array at 119 microns. [for plasma diagnostics

NASA Technical Reports Server (NTRS)

Neikirk, N. P.; Tong, P. P.; Putledge, D. B.; Park, H.; Young, P. E.

1982-01-01

A focal-plane imaging antenna array has been demonstrated at 119 microns. The array is a line of evaporated silver bow-tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half-micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction-limited cut-off frequency.

The Mu2e undoped CsI crystal calorimeter

NASA Astrophysics Data System (ADS)

Atanov, N.; Baranov, V.; Budagov, J.; Cervelli, F.; Colao, F.; Cordelli, M.; Corradi, G.; Davydov, Y. I.; Di Falco, S.; Diociaiuti, E.; Donati, S.; Donghia, R.; Echenard, B.; Giovannella, S.; Glagolev, V.; Grancagnolo, F.; Happacher, F.; Hitlin, D. G.; Martini, M.; Miscetti, S.; Miyashita, T.; Morescalchi, L.; Murat, P.; Pedreschi, E.; Pezzullo, G.; Porter, F.; Raffaelli, F.; Ricci, M.; Saputi, A.; Sarra, I.; Spinella, F.; Tassielli, G.; Tereshchenko, V.; Usubov, Z.; Zhu, R. Y.

2018-02-01

The Mu2e experiment at Fermilab will search for Charged Lepton Flavor Violating conversion of a muon to an electron in an atomic field. The Mu2e detector is composed of a tracker, an electromagnetic calorimeter and an external system, surrounding the solenoid, to veto cosmic rays. The calorimeter plays an important role to provide: a) excellent particle identification capabilities; b) a fast trigger filter; c) an easier tracker track reconstruction. Two disks, located downstream of the tracker, contain 674 pure CsI crystals each. Each crystal is read out by two arrays of UV-extended SiPMs. The choice of the crystals and SiPMs has been finalized after a thorough test campaign. A first small scale prototype consisting of 51 crystals and 102 SiPM arrays has been exposed to an electron beam at the BTF (Beam Test Facility) in Frascati. Although the readout electronics were not final, results show that the current design is able to meet the timing and energy resolution required by the Mu2e experiment.

Large-format platinum silicide microwave kinetic inductance detectors for optical to near-IR astronomy.

PubMed

Szypryt, P; Meeker, S R; Coiffard, G; Fruitwala, N; Bumble, B; Ulbricht, G; Walter, A B; Daal, M; Bockstiegel, C; Collura, G; Zobrist, N; Lipartito, I; Mazin, B A

2017-10-16

We have fabricated and characterized 10,000 and 20,440 pixel Microwave Kinetic Inductance Detector (MKID) arrays for the Dark-speckle Near-IR Energy-resolved Superconducting Spectrophotometer (DARKNESS) and the MKID Exoplanet Camera (MEC). These instruments are designed to sit behind adaptive optics systems with the goal of directly imaging exoplanets in a 800-1400 nm band. Previous large optical and near-IR MKID arrays were fabricated using substoichiometric titanium nitride (TiN) on a silicon substrate. These arrays, however, suffered from severe non-uniformities in the TiN critical temperature, causing resonances to shift away from their designed values and lowering usable detector yield. We have begun fabricating DARKNESS and MEC arrays using platinum silicide (PtSi) on sapphire instead of TiN. Not only do these arrays have much higher uniformity than the TiN arrays, resulting in higher pixel yields, they have demonstrated better spectral resolution than TiN MKIDs of similar design. PtSi MKIDs also do not display the hot pixel effects seen when illuminating TiN on silicon MKIDs with photons with wavelengths shorter than 1 µm.

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Cuevas, Andres

2015-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath plasma enhanced chemical vapour deposited silicon nitride (SiNx). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta2O5 and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω.cm and n-type 1.0 Ω.cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012 cm-2 for the Ta2O5 film and -1.0 × 1012 cm-2 for the Ta2O5/SiNx stack. The Ta2O5/SiNx stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

PubMed

Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

2018-03-14

Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide range of feature sizes has significant implications for 2.5D/3D photonic and electronic device applications.

X-Ray Detector for 1 to 30 keV

NASA Technical Reports Server (NTRS)

Alcorn, G.; Jackson, J., Jr; Grant, P.; Marshall, F.

1983-01-01

Array of silicon X-ray detecting diodes measures photon energy and provides image of X-ray pattern. Regardless of thickness of new X-ray detector, depletion region extends through it. Impinging X-rays generate electrons in quantities proportional to X-ray energy. X-ray detector is mated to chargecoupled-device array for image generation and processing. Useful in industrial part inspection, pulsed-plasma research and medical application.

32-element beta detector developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

High resolution amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

High resolution amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

1992-01-01

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Noncontact Characterization of PV Detector Arrays

DTIC Science & Technology

1990-06-01

11-7 3 III DIODE ARRAY AS A SAW CONVOLVER/STORAGE CORRELATOR .... III-1 III.A NONLINEAR ( VARACTOR ) ACTION OF THE DIODES .......................... I...associated with the diodes in the detector array. The varactor action of the diodes produces a voltage across the diodes which is pro- portional to the...type of interactions desired herein. An alternative approach is to em- ploy thin dielectric overlays, such as zinc oxide or silicon nitride

Analytical performance of a versatile laboratory microscopic X-ray fluorescence system for metal uptake studies on argillaceous rocks

NASA Astrophysics Data System (ADS)

Gergely, Felicián; Osán, János; Szabó, B. Katalin; Török, Szabina

2016-02-01

Laboratory-scale microscopic X-ray fluorescence (micro-XRF) plays an increasingly important role in various fields where multielemental investigations of samples are indispensable. In case of geological samples, the reasonable detection limits (LOD) and spatial resolutions are necessary to identify the trace element content in microcrystalline level. The present study focuses on the analytical performance of a versatile laboratory-scale micro-XRF system with various options of X-ray sources and detectors to find the optimal experimental configuration in terms of sensitivities and LOD for selected elements in loaded petrographic thin sections. The method was tested for sorption studies involving thin sections prepared from cores of Boda Claystone Formation, which is a potential site for a high-level radioactive waste repository. Loaded ions in the sorption measurements were Cs(I) and Ni(II) chemically representing fission and corrosion products. Based on the collected elemental maps, the correlation between the elements representative of main rock components and the selected loaded ion was studied. For the elements of interest, Cs(I) and Ni(II) low-power iMOXS source with polycapillary and silicon drift detector was found to be the best configuration to reach the optimal LOD values. Laboratory micro-XRF was excellent to identify the responsible key minerals for the uptake of Cs(I). In case of nickel, careful corrections were needed because of the relatively high Ca content of the rock samples. The results were compared to synchrotron radiation micro-XRF.

NASA AMES infrared detector assemblies

NASA Technical Reports Server (NTRS)

1979-01-01

Silicon: Gallium infrared detector assemblies were designed, fabricated, and tested using techniques representative of those employed for hybrid arrays to determine the suitability of this candidate technology for infrared astronomical detector array applications. Both the single channel assembly and the assembly using a 32 channel CMOS multiplexer are considered. The detector material was certified to have a boron background of less than 10 to the 13th power atoms/sq cm counter doped with phosphorus. The gallium concentration is 2 x 10 to the 16th power atoms/cu cm.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

PubMed

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Si:Bi switched photoconducttor infrared detector array

NASA Technical Reports Server (NTRS)

Eakin, C. E.

1983-01-01

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

MCT Detectors and ROICS for Various Format MWIR and LWIR Arrays

DTIC Science & Technology

2009-10-01

ABSTRACT Silicon ROICs for MCT LWIR (4x288, 6x576) and MWIR (128x128) diode matrix arrays were designed, manufactured and tested. MCT layers...of polysilicon and two metallization levels. MCT Detectors and ROICs for Various Format MWIR and LWIR Arrays RTO-MP-SET-151 7 - 1...Format MWIR and LWIR Arrays 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

2016-01-01

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

Characterization of scintillator-based detectors for few-ten-keV high-spatial-resolution x-ray imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larsson, Jakob C., E-mail: jakob.larsson@biox.kth.se; Lundström, Ulf; Hertz, Hans M.

2016-06-15

Purpose: High-spatial-resolution x-ray imaging in the few-ten-keV range is becoming increasingly important in several applications, such as small-animal imaging and phase-contrast imaging. The detector properties critically influence the quality of such imaging. Here the authors present a quantitative comparison of scintillator-based detectors for this energy range and at high spatial frequencies. Methods: The authors determine the modulation transfer function, noise power spectrum (NPS), and detective quantum efficiency for Gadox, needle CsI, and structured CsI scintillators of different thicknesses and at different photon energies. An extended analysis of the NPS allows for direct measurements of the scintillator effective absorption efficiency andmore » effective light yield as well as providing an alternative method to assess the underlying factors behind the detector properties. Results: There is a substantial difference in performance between the scintillators depending on the imaging task but in general, the CsI based scintillators perform better than the Gadox scintillators. At low energies (16 keV), a thin needle CsI scintillator has the best performance at all frequencies. At higher energies (28–38 keV), the thicker needle CsI scintillators and the structured CsI scintillator all have very good performance. The needle CsI scintillators have higher absorption efficiencies but the structured CsI scintillator has higher resolution. Conclusions: The choice of scintillator is greatly dependent on the imaging task. The presented comparison and methodology will assist the imaging scientist in optimizing their high-resolution few-ten-keV imaging system for best performance.« less

Characterization of scintillator-based detectors for few-ten-keV high-spatial-resolution x-ray imaging.

PubMed

Larsson, Jakob C; Lundström, Ulf; Hertz, Hans M

2016-06-01

High-spatial-resolution x-ray imaging in the few-ten-keV range is becoming increasingly important in several applications, such as small-animal imaging and phase-contrast imaging. The detector properties critically influence the quality of such imaging. Here the authors present a quantitative comparison of scintillator-based detectors for this energy range and at high spatial frequencies. The authors determine the modulation transfer function, noise power spectrum (NPS), and detective quantum efficiency for Gadox, needle CsI, and structured CsI scintillators of different thicknesses and at different photon energies. An extended analysis of the NPS allows for direct measurements of the scintillator effective absorption efficiency and effective light yield as well as providing an alternative method to assess the underlying factors behind the detector properties. There is a substantial difference in performance between the scintillators depending on the imaging task but in general, the CsI based scintillators perform better than the Gadox scintillators. At low energies (16 keV), a thin needle CsI scintillator has the best performance at all frequencies. At higher energies (28-38 keV), the thicker needle CsI scintillators and the structured CsI scintillator all have very good performance. The needle CsI scintillators have higher absorption efficiencies but the structured CsI scintillator has higher resolution. The choice of scintillator is greatly dependent on the imaging task. The presented comparison and methodology will assist the imaging scientist in optimizing their high-resolution few-ten-keV imaging system for best performance.

Trigger design for a gamma ray detector of HIRFL-ETF

NASA Astrophysics Data System (ADS)

Du, Zhong-Wei; Su, Hong; Qian, Yi; Kong, Jie

2013-10-01

The Gamma Ray Array Detector (GRAD) is one subsystem of HIRFL-ETF (the External Target Facility (ETF) of the Heavy Ion Research Facility in Lanzhou (HIRFL)). It is capable of measuring the energy of gamma-rays with 1024 CsI scintillators in in-beam nuclear experiments. The GRAD trigger should select the valid events and reject the data from the scintillators which are not hit by the gamma-ray. The GRAD trigger has been developed based on the Field Programmable Gate Array (FPGAs) and PXI interface. It makes prompt trigger decisions to select valid events by processing the hit signals from the 1024 CsI scintillators. According to the physical requirements, the GRAD trigger module supplies 12-bit trigger information for the global trigger system of ETF and supplies a trigger signal for data acquisition (DAQ) system of GRAD. In addition, the GRAD trigger generates trigger data that are packed and transmitted to the host computer via PXI bus to be saved for off-line analysis. The trigger processing is implemented in the front-end electronics of GRAD and one FPGA of the GRAD trigger module. The logic of PXI transmission and reconfiguration is implemented in another FPGA of the GRAD trigger module. During the gamma-ray experiments, the GRAD trigger performs reliably and efficiently. The function of GRAD trigger is capable of satisfying the physical requirements.

Characterization of SiCSiC Composites in Support of Environmental Degradation Modeling

NASA Technical Reports Server (NTRS)

Kiser, Doug; Sullivan, Roy; Bhatt, Ram; Smith, Craig; Zima, John; McCue, Terry

2016-01-01

SiCSiC (silicon carbide fiber reinforced silicon carbide) composites are candidate materials for various turbine engine applications because of their high specific strength and good creep and oxidation resistance at elevated temperatures. This study was performed to characterize the microstructure of a melt infiltrated (MI) SiCSiC, and to examine environmental degradation mechanisms occurring in precracked MI SiCSiC CMC specimens under tensile stresses of 30 ksi or less at 815C in dry air or argon. In addition, the oxidation of the BN interface was characterized at815C, and crack opening displacement as a function of stress measurements were made. This material characterization is being performed to obtain data to support NASA GRC modeling of SiCSiC environmental degradation. The comparison of experimentally-observed phenomena with model predictions can lead to improved understanding of material degradation mechanisms.

Development of dual-polarization LEKIDs for CMB observations

NASA Astrophysics Data System (ADS)

McCarrick, Heather; Abitbol, Maximilian H.; Ade, Peter A. R.; Barry, Peter; Bryan, Sean; Che, George; Day, Peter; Doyle, Simon; Flanigan, Daniel; Johnson, Bradley R.; Jones, Glenn; LeDuc, Henry G.; Limon, Michele; Mauskopf, Philip; Miller, Amber; Tucker, Carole; Zmuidzinas, Jonas

2016-07-01

We discuss the design considerations and initial measurements from arrays of dual-polarization, lumped-element kinetic inductance detectors (LEKIDs) nominally designed for cosmic microwave background (CMB) studies. The detectors are horn-coupled, and each array element contains two single-polarization LEKIDs, which are made from thin-film aluminum and optimized for a single spectral band centered on 150 GHz. We are developing two array architectures, one based on 160 micron thick silicon wafers and the other based on silicon-on-insulator (SOI) wafers with a 30 micron thick device layer. The 20-element test arrays (40 LEKIDs) are characterized with both a linearly-polarized electronic millimeter wave source and a thermal source. We present initial measurements including the noise spectra, noise-equivalent temperature, and responsivity. We discuss future testing and further design optimizations to be implemented.

SU-E-I-51: Quantitative Assessment of X-Ray Imaging Detector Performance in a Clinical Setting - a Simple Approach Using a Commercial Instrument

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sjoeberg, J; Bujila, R; Omar, A

2015-06-15

Purpose: To measure and compare the performance of X-ray imaging detectors in a clinical setting using a dedicated instrument for the quantitative determination of detector performance. Methods: The DQEPro (DQE Instruments Inc., London, Ontario Canada) was used to determine the MTF, NPS and DQE using an IEC compliant methodology for three different imaging modalities: conventional radiography (CsI-based detector), general-purpose radioscopy (CsI-based detector), and mammography (a-Se based detector). The radiation qualities (IEC) RQA-5 and RQA-M-2 were used for the CsI-based and a-Se-based detectors, respectively. The DQEPro alleviates some of the difficulties associated with DQE measurements by automatically positioning test devices overmore » the detector, guiding the user through the image acquisition process and providing software for calculations. Results: A comparison of the NPS showed that the image noise of the a-Se detector was less correlated than the CsI detectors. A consistently higher performance was observed for the a-Se detector at all spatial frequencies (MTF: 0.97@0.25 cy/mm, DQE: 0.72@0.25 cy/mm) and the DQE drops off slower than for the CsI detectors. The CsI detector used for conventional radiography displayed a higher performance at low spatial frequencies compared to the CsI detector used for radioscopy (DQE: 0.65 vs 0.60@0.25 cy/mm). However, at spatial frequencies above 1.3 cy/mm, the radioscopy detector displayed better performance than the conventional radiography detector (DQE: 0.35 vs 0.24@2.00 cy/mm). Conclusion: The difference in the MTF, NPS and DQE that was observed for the two different CsI detectors and the a-Se detector reflect the imaging tasks that the different detector types are intended for. The DQEPro has made the determination and calculation of quantitative metrics of X-ray imaging detector performance substantially more convenient and accessible to undertake in a clinical setting.« less

The development and test of multi-anode microchannel array detector systems. Part 2: Soft X-ray detectors

NASA Technical Reports Server (NTRS)

Timothy, J. G.

1986-01-01

Detector systems based on the high gain microchannel plate (MCP) electron multiplier were used extensively for imaging at soft X-ray wavelengths both on the ground and in space. The latest pulse counting electronic readout systems provide zero readout noise, spatial resolutions (FWHM) of 25 microns or better and can determine the arrival times of detected photons to an accuracy of the order of 100 ns. These systems can be developed to produce detectors with active areas of 100 nm in diameter or greater. The use of CsI photocathodes produces very high detective quantum efficiencies at wavelengths between about 100 and 1A (approximately 0.1 to 10 keV) with moderate energy resolution. The operating characteristics of the different types of soft X-ray MCP detector systems are described and the prospects for future developments are discussed.

Responsivity boosting in FIR TiN LEKIDs using phonon recycling: simulations and array design

NASA Astrophysics Data System (ADS)

Fyhrie, Adalyn; McKenney, Christopher; Glenn, Jason; LeDuc, Henry G.; Gao, Jiansong; Day, Peter; Zmuidzinas, Jonas

2016-07-01

To characterize further the cosmic star formation history at high redshifts, a large-area survey by a cryogenic 4-6 meter class telescope with a focal plane populated by tens of thousands of far-infrared (FIR, 30-300 μm) detectors with broadband detector noise equivalent powers (NEPs) on the order of 3×10-9 W/√ Hz is needed. Ideal detectors for such a surveyor do not yet exist. As a demonstration of one technique for approaching the ultra-low NEPs required by this surveyor, we present the design of an array of 96 350 µm KIDs that utilize phonon recycling to boost responsivity. Our KID array is fabricated with TiN deposited on a silicon-on-insulator (SOI) wafer, which is a 2 μm thick layer of silicon bonded to a thicker slab of silicon by a thin oxide layer. The backside thick slab is etched away underneath the absorbers so that the inductors are suspended on just the 2 μm membrane. The intent is that quasiparticle recombination phonons are trapped in the thin membrane, thereby increasing their likelihood of being re-absorbed by the KID to break additional Cooper pairs and boost responsivity. We also present a Monte-Carlo simulation that predicts the amount of signal boost expected from phonon recycling given different detector geometries and illumination strategies. For our current array geometry, the simulation predicts a measurable 50% boost in responsivity.

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R. G.

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31P ions.

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

PubMed Central

2013-01-01

In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors. PMID:23773702

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Technical Reports Server (NTRS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.;

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Astrophysics Data System (ADS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Niraula, P.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Ward, J. T.; Wollack, E. J.; Vavagiakis, E. M.

2016-08-01

The Atacama Cosmology Telescope Polarimeter (ACTPol) is a polarization sensitive receiver for the 6-m Atacama Cosmology Telescope (ACT) and measures the small angular scale polarization anisotropies in the cosmic microwave background (CMB). The full focal plane is composed of three detector arrays, containing over 3000 transition edge sensors (TES detectors) in total. The first two detector arrays, observing at 146 GHz, were deployed in 2013 and 2014, respectively. The third and final array is composed of multichroic pixels sensitive to both 90 and 146 GHz and saw first light in February 2015. Fabricated at NIST, this dichroic array consists of 255 pixels, with a total of 1020 polarization sensitive bolometers and is coupled to the telescope with a monolithic array of broad-band silicon feedhorns. The detectors are read out using time-division SQUID multiplexing and cooled by a dilution refrigerator at 110 mK. We present an overview of the assembly and characterization of this multichroic array in the lab, and the initial detector performance in Chile. The detector array has a TES detector electrical yield of 85 %, a total array sensitivity of less than 10 \\upmu K√{ {s}}, and detector time constants and saturation powers suitable for ACT CMB observations.

The Mu2e undoped CsI crystal calorimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanov, N.; Baranov, V.; Budagov, J.

We present the Mu2e experiment at Fermilab will search for Charged Lepton Flavor Violating conversion of a muon to an electron in an atomic field. The Mu2e detector is composed of a tracker, an electromagnetic calorimeter and an external system, surrounding the solenoid, to veto cosmic rays. The calorimeter plays an important role to provide: a) excellent particle identification capabilities; b) a fast trigger filter; c) an easier tracker track reconstruction. Two disks, located downstream of the tracker, contain 674 pure CsI crystals each. Each crystal is read out by two arrays of UV-extended SiPMs. The choice of the crystalsmore » and SiPMs has been finalized after a thorough test campaign. A first small scale prototype consisting of 51 crystals and 102 SiPM arrays has been exposed to an electron beam at the BTF (Beam Test Facility) in Frascati. Lastly, although the readout electronics were not final, results show that the current design is able to meet the timing and energy resolution required by the Mu2e experiment.« less

The Mu2e undoped CsI crystal calorimeter

DOE PAGES

Atanov, N.; Baranov, V.; Budagov, J.; ...

2018-02-22

We present the Mu2e experiment at Fermilab will search for Charged Lepton Flavor Violating conversion of a muon to an electron in an atomic field. The Mu2e detector is composed of a tracker, an electromagnetic calorimeter and an external system, surrounding the solenoid, to veto cosmic rays. The calorimeter plays an important role to provide: a) excellent particle identification capabilities; b) a fast trigger filter; c) an easier tracker track reconstruction. Two disks, located downstream of the tracker, contain 674 pure CsI crystals each. Each crystal is read out by two arrays of UV-extended SiPMs. The choice of the crystalsmore » and SiPMs has been finalized after a thorough test campaign. A first small scale prototype consisting of 51 crystals and 102 SiPM arrays has been exposed to an electron beam at the BTF (Beam Test Facility) in Frascati. Lastly, although the readout electronics were not final, results show that the current design is able to meet the timing and energy resolution required by the Mu2e experiment.« less

InSb arrays with CCD readout for 1.0- to 5.5-microns infrared applications

NASA Technical Reports Server (NTRS)

Phillips, J. D.; Scorso, J. B.; Thom, R. D.

1976-01-01

There were two approaches for fabricating indium antimonide (InSb) arrays with CCD readout discussed. The hybrid approach integrated InSb detectors and silicon CCDs in a modular assembly via an advanced interconnection technology. In the monolithic approach, the InSb infrared detectors and the CCD readout were integrated on the same InSb chip. Both approaches utilized intrinsic (band-to-band) photodetection with the attendant advantages over extrinsic detectors. The status of each of these detector readout concepts, with pertinent performance characteristics, was presented.

Bolometeric detector arrays for CMB polarimetry

NASA Technical Reports Server (NTRS)

Kuo, C. L.; Bock, J. J.; Day, P.; Goldin, A.; Golwala, S.; Holmes, W.; Irwin, K.; Kenyon, M.; Lange, A. E.; LeDuc, H. G.;

Design, implementation, and performance of the Astro-H SXS calorimeter array and anticoincidence detector

NASA Astrophysics Data System (ADS)

Kilbourne, Caroline A.; Adams, Joseph S.; Brekosky, Regis P.; Chervenak, James A.; Chiao, Meng P.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Galeazzi, Masimilliano; Grein, Christoph; Jhabvala, Christine A.; Kelly, Daniel; Leutenegger, Maurice A.; McCammon, Dan; Scott Porter, F.; Szymkowiak, Andrew E.; Watanabe, Tomomi; Zhao, Jun

2018-01-01

The calorimeter array of the JAXA Astro-H (renamed Hitomi) soft x-ray spectrometer (SXS) was designed to provide unprecedented spectral resolution of spatially extended cosmic x-ray sources and of all cosmic x-ray sources in the Fe-K band around 6 keV, enabling essential plasma diagnostics. The SXS had a square array of 36 x-ray calorimeters at the focal plane. These calorimeters consisted of ion-implanted silicon thermistors and HgTe thermalizing x-ray absorbers. These devices demonstrated a resolution of better than 4.5 eV at 6 keV when operated at a heat-sink temperature of 50 mK. We will discuss the basic physical parameters of this array, including the array layout, thermal conductance of the link to the heat sink, resistance function, absorber details, and means of attaching the absorber to the thermistor-bearing element. We will also present the thermal characterization of the whole array, including thermal conductance and crosstalk measurements and the results of pulsing the frame temperature via alpha particles, heat pulses, and the environmental background. A silicon ionization detector was located behind the calorimeter array and served to reject events due to cosmic rays. We will briefly describe this anticoincidence detector and its performance.

The Design, Implementation, and Performance of the Astro-H SXS Calorimeter Array and Anti-Coincidence Detector

NASA Technical Reports Server (NTRS)

Kilbourne, Caroline A.; Adams, Joseph S.; Brekosky, Regis P.; Chiao, Meng P.; Chervenak, James A.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Galeazzi, Masimilliano; Grein, Christoph; Jhabvala, Christine A.;

Prototype Compton imager for special nuclear material

NASA Astrophysics Data System (ADS)

Wulf, Eric A.; Phlips, Bernard F.; Kurfess, James D.; Novikova, Elena I.; Fitzgerald, Carrie

2006-05-01

Compton imagers offer a method for passive detection of nuclear material over background radiation. A prototype Compton imager has been constructed using 8 layers of silicon detectors. Each layer consists of a 2×2 array of 2 mm thick cross-strip double-sided silicon detectors with active areas of 5.7 × 5.7 cm2 and 64 strips per side. The detectors are daisy-chained together in the array so that only 256 channels of electronics are needed to read-out each layer of the instrument. This imager is a prototype for a large, high-efficiency Compton imager that will meet operational requirements of Homeland Security for detection of shielded uranium. The instrument can differentiate between different radioisotopes using the reconstructed gamma-ray energy and can also show the location of the emissions with respect to the detector location. Results from the current instrument as well as simulations of the next generation instrument are presented.

Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

2015-12-07

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less

Lead sulfide - Silicon MOSFET infrared focal plane development

NASA Technical Reports Server (NTRS)

Barrett, J. R.; Jhabvala, M. D.

1983-01-01

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Compact Micromachined Infrared Bandpass Filters for Planetary Spectroscopy

NASA Technical Reports Server (NTRS)

Merrell, Willie C., II; Aslam, Shahid; Brown, Ari D.; Chervenak, James A.; Huang, Wei-Chung; Quijada, Manuel; Wollack, Edward

2011-01-01

The future needs of space based observational planetary and astronomy missions include low mass and small volume radiometric instruments that can operate in high radiation and low temperature environments. Here we focus on a central spectroscopic component, the bandpass filter. We model the bandpass response of the filters to target the wavelength of the resonance peaks at 20, 40, and 60 micrometers and report good agreement between the modeled and measured response. We present a technique of using common micromachining processes for semiconductor fabrication to make compact, free standing resonant metal mesh filter arrays with silicon support frames. The process can accommodate multiple detector array architectures and the silicon frame provides lightweight mechanical support with low form factor. We also present a conceptual hybridization of the filters with a detector array.

Gallium arsenide quantum well-based far infrared array radiometric imager

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Jhabvala, Murzy D.

1991-01-01

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Blocked impurity band hybrid infrared focal plane arrays for astronomy

NASA Technical Reports Server (NTRS)

Reynolds, D. B.; Seib, D. H.; Stetson, S. B.; Herter, T.; Rowlands, N.

1989-01-01

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Backshort-Under-Grid arrays for infrared astronomy

NASA Astrophysics Data System (ADS)

Allen, C. A.; Benford, D. J.; Chervenak, J. A.; Chuss, D. T.; Miller, T. M.; Moseley, S. H.; Staguhn, J. G.; Wollack, E. J.

2006-04-01

We are developing a kilopixel, filled bolometer array for space infrared astronomy. The array consists of three individual components, to be merged into a single, working unit; (1) a transition edge sensor bolometer array, operating in the milliKelvin regime, (2) a quarter-wave backshort grid, and (3) superconducting quantum interference device multiplexer readout. The detector array is designed as a filled, square grid of suspended, silicon bolometers with superconducting sensors. The backshort arrays are fabricated separately and will be positioned in the cavities created behind each detector during fabrication. The grids have a unique interlocking feature machined into the walls for positioning and mechanical stability. The spacing of the backshort beneath the detector grid can be set from ˜30 300 μm, by independently adjusting two process parameters during fabrication. The ultimate goal is to develop a large-format array architecture with background-limited sensitivity, suitable for a wide range of wavelengths and applications, to be directly bump bonded to a multiplexer circuit. We have produced prototype two-dimensional arrays having 8×8 detector elements. We present detector design, fabrication overview, and assembly technologies.

Atomistic Tight-Binding Theory Applied to Structural and Optical Properties of Silicon Nanodisks

NASA Astrophysics Data System (ADS)

Sukkabot, Worasak

2018-05-01

The use of ultrathin crystalline silicon (c-Si) wafers in solar cells necessitates a highly effective light absorber to compensate for poor light absorption. One route to overcoming this problem is to use a periodic array of Si nanodisks on ultrathin c-Si. In the present manuscript, we numerically investigate the effects of the geometrical parameters of the Si nanodisks, including disk diameter (D) and length (L), on the structural and optical properties, using atomistic tight-binding theory. These computations confirm that the electronic structure and optical properties are sensitive to the structural parameters. As the disk diameter and length increase, the single-electron energies decrease, and the single-hole energies increase. These calculations also reveal that, because of the quantum confinement effect, the optical band gaps gradually decrease independently of the increasing disk diameter and length. The optical spectra can be tuned across the visible region by varying the disk diameter and length, which is a useful feature for optimizing light absorption in solar cell applications. As the disk diameter and length increased, the optical intensities also increased; however, the atomistic electron-hole interactions and ground electron-hole wave function overlap progressively decreased. The ground electron-hole wave function overlap, Stokes shift, and fine structure splitting decreased as the disk diameter and length were increased. Thus, Si nanodisks with a large diameter and length might be a suitable candidate source of entangled photons. The Si nanodisks in this study also show promise for applications to solar cells based on ultrathin c-Si wafers.

Radiation hardness test of un-doped CsI crystals and Silicon Photomultipliers for the Mu2e calorimeter

NASA Astrophysics Data System (ADS)

Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Loreti, S.; Miscetti, S.; Pillon, M.; Sarra, I.

2017-11-01

The Mu2e calorimeter is composed by 1400 un-doped CsI crystals coupled to large area UV extended Silicon Photomultipliers arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position. It should also be fast enough to handle the high rate background and it must operate and survive in a high radiation environment. Simulation studies estimated that, in the hottest regions, each crystal will absorb a dose of 300 Gy and will be exposed to a neutron fluency of 6 × 1011 n/cm2 in 3 years of running. Test of un-doped CsI crystals irradiated up to 900 Gy and to a neutron fluency up to 9 × 1011 n/cm2 have been performed at CALLIOPE and FNG ENEA facilities in Italy. We present our study on the variation of light yield (LY) and longitudinal response uniformity (LRU) of these crystals after irradiation. The ionization dose does not modify LRU while a 20% reduction in LY is observed at 900 Gy. Similarly, the neutron flux causes an acceptable LY deterioration (≤ 15%). A neutron irradiation test on different types of SIPMs (two different array models from Hamamatsu and one from FBK) have also been carried out by measuring the variation of the leakage current and the charge response to an ultraviolet led. We concluded that, in the experiment, we will need to cool down the SIPMs to 0 °C reduce the leakage current to an acceptable level.

Bolometric Array Detectors for Space-Borne Astronomy

NASA Technical Reports Server (NTRS)

Lange, Andrew E.

2000-01-01

Funding from the NASA Innovative Research Grant was used to develop bolometric detectors. As described in the proposal, silicon nitride micromesh ('spider-web') absorbers had been demonstrated at U.C. Berkeley but not developed to be flight-worthy devices. We proceeded to first fabricate bolometers with Neutron Transmutation Doped (NTD) Ge thermistors that demonstrated high optical coupling (Church et al. 1996) and were developed for a ground-based millimeter-wave receiver (Mauskopf et al. 1997). The next generation of devices used In bump-bonded thermistors to achieve devices with performance product NEP*sqrt(tau) = 3e - 18 j at 300 mK, demonstrating a full order of magnitude improvement over pervious devices. These devices achieved an NEP = 1e-18 W/rtHz (Murray et al. 1996) as promised in the proposal. Sensitivities as good as 1e - 19 W/rtHz appear achievable with the silicon nitride architecture (Bock et al. 1997). Finally, arrays of micromesh bolometers were shown to be feasible in the last year of the program by etching a large number of devices on a single silicon wafer (75 mm). Full arrays were subsequently demonstrated for selection on the ESA/NASA Far-Infrared Space Telescope (FIRST) in competition with detectors provided by CEA in France and GSFC in the US Micromesh bolometer arrays are now baselined for both the ESA/NASA Planck and FIRST missions.

An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.

PubMed

Zhou, Zhi-Quan; Hu, Fei; Zhou, Wen-Jie; Chen, Hong-Yan; Ma, Lei; Zhang, Chi; Lu, Ming

2017-12-15

Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear was found to perform far better than that of similar structure but with no b-Si at the rear, with the efficiency being increased relatively by 27.7%. This finding was interesting as b-Si had a large specific surface area, which could cause high surface recombination and degradation of solar cell performance. A graded band gap was found to form at the rear of the c-Si solar cell with b-Si layer at the rear. This graded band gap tended to expel free electrons away from the rear, thus reducing the probability of electron-hole recombination at b-Si and improving the performance of c-Si solar cell.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

NASA Astrophysics Data System (ADS)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

A Radiation Dosimeter Concept for the Lunar Surface Environment

NASA Technical Reports Server (NTRS)

Adams, James H.; Christl, Mark J.; Watts, John; Kuznetsov, Eugeny N.; Parnell, Thomas A.; Pendleton, Geoff N.

2007-01-01

A novel silicon detector configuration for radiation dose measurements in an environment where solar energetic particles are of most concern is described. The dosimeter would also measure the dose from galactic cosmic rays. In the lunar environment a large range in particle flux and ionization density must be measured and converted to dose equivalent. This could be accomplished with a thick (e.g. 2mm) silicon detector segmented into cubic volume elements "voxels" followed by a second, thin monolithic silicon detector. The electronics needed to implement this detector concept include analog signal processors (ASIC) and a field programmable gate array (FPGA) for data accumulation and conversion to linear energy transfer (LET) spectra and to dose-equivalent (Sievert). Currently available commercial ASIC's and FPGA's are suitable for implementing the analog and digital systems.

The CENNS-10 liquid argon detector to measure CEvNS at the Spallation Neutron Source

NASA Astrophysics Data System (ADS)

Tayloe, R.

2018-04-01

The COHERENT collaboration is deploying a suite of low-energy detectors in a low-background corridor of the ORNL Spallation Neutron Source (SNS) to measure coherent elastic neutrino-nucleus scattering (CEvNS) on an array of nuclear targets employing different detector technologies. A measurement of CEvNS on different nuclei will test the N2-dependence of the CEvNS cross section and further the physics reach of the COHERENT effort. The first step of this program has been realized recently with the observation of CEvNS in a 14.6 kg CsI detector. Operation and deployment of Ge and NaI detectors are also underway. A 22 kg, single-phase, liquid argon detector (CENNS-10) started data-taking in Dec. 2016 and will provide results on CEvNS from a lighter nucleus. Initial results indicate that light output, pulse-shape discrimination, and background suppression are sufficient for a measurement of CEvNS on argon.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Infrared charge-injection-device array performance at low background

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Goebel, J. H.

1981-01-01

Low-background tests of a 1 x 32 Si:Bi charge-injection-device (CID) IR detector are carried out to evaluate its feasibility for space-based astronomical observations. Optimum performance is obtained at a temperature of 11 K. The sensitivity is found to compare well with that of discrete extrinsic silicon photoconductors. The measured sensitivity and the apparent absence of anomalous effects make extrinsic silicon CID arrays very promising for astronomical applications.

First data with the Hybrid Array of Gamma Ray Detector (HAGRiD)

NASA Astrophysics Data System (ADS)

Smith, K.; Baugher, T.; Burcher, S.; Carter, A. B.; Cizewski, J. A.; Chipps, K. A.; Febbraro, M.; Grzywacz, R.; Jones, K. L.; Munoz, S.; Pain, S. D.; Paulauskas, S. V.; Ratkiewicz, A.; Schmitt, K. T.; Thornsberry, C.; Toomey, R.; Walter, D.; Willoughby, H.

2018-01-01

The structure of nuclei provides insight into astrophysical reaction rates that are difficult to measure directly. These studies are often performed with transfer reactions and β-decay measurements. These experiments benefit from particle-γ coincidence measurements which provide information beyond that of particle detection alone. The Hybrid Array of Gamma Ray Detectors (HAGRiD) of LaBr3(Ce) scintillators has been designed with this purpose in mind. The design of the array permits it to be coupled with particle detector systems, such as the Oak Ridge Rutgers University Barrel Array (ORRUBA) of silicon detectors and the Versatile Array of Neutron Detectors at Low Energy (VANDLE). It is also designed to operate with the Jet Experiments in Nuclear Structure and Astrophysics (JENSA) advanced target system. HAGRiD's design avoids compromising the charged-particle angular resolution due to compact geometries which are often used to increase the γ efficiency in other systems. First experiments with HAGRiD coupled to VANDLE as well as ORRUBA and JENSA are discussed.

Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

NASA Astrophysics Data System (ADS)

Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

2016-02-01

This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.

Applications of Gas Imaging Micro-Well Detectors to an Advanced Compton Telescope

NASA Technical Reports Server (NTRS)

Bloser, P. F.; Hunter, S. D.; Ryan, J. M.; McConnell, M. L.; Miller, R. S.; Jackson, T. N.; Bai, B.; Jung, S.

2003-01-01

We present a concept for an Advanced Compton Telescope (ACT) based on the use of pixelized gas micro-well detectors to form a three-dimensional electron track imager. A micro-well detector consists of an array of individual micro-patterned proportional counters opposite a planar drift electrode. When combined with thin film transistor array readouts, large gas volumes may be imaged with very good spatial and energy resolution at reasonable cost. The third dimension is determined by timing the drift of the ionization electrons. The primary advantage of this approach is the excellent tracking of the Compton recoil electron that is possible in a gas volume. Such good electron tracking allows us to reduce the point spread function of a single incident photon dramatically, greatly improving the imaging capability and sensitivity. The polarization sensitivity, which relies on events with large Compton scattering angles, is particularly enhanced. We describe a possible ACT implementation of this technique, in which the gas tracking volume is surrounded by a CsI calorimeter, and present our plans to build and test a small prototype over the next three years.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less

IRAC test report. Gallium doped silicon band 2: Read noise and dark current

NASA Technical Reports Server (NTRS)

Lamb, Gerald; Shu, Peter; Mather, John; Ewin, Audrey; Bowser, Jeffrey

1987-01-01

A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

High-resolution x-ray imaging using a structured scintillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hormozan, Yashar, E-mail: hormozan@kth.se; Sychugov, Ilya; Linnros, Jan

2016-02-15

Purpose: In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Methods: Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator arraymore » to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. Results: The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. Conclusions: The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.« less

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Mitigating mechanical failure of crystalline silicon electrodes for lithium batteries by morphological design [Morphological design of silicon electrode with anisotropic interface reaction rate for lithium ion batteries

DOE PAGES

An, Yonghao; Wood, Brandon C.; Ye, Jianchao; ...

2015-06-08

Although crystalline silicon (c-Si) anodes promise very high energy densities in Li-ion batteries, their practical use is complicated by amorphization, large volume expansion and severe plastic deformation upon lithium insertion. Recent experiments have revealed the existence of a sharp interface between crystalline Si (c-Si) and the amorphous Li xSi alloy during lithiation, which propagates with a velocity that is orientation dependent; the resulting anisotropic swelling generates substantial strain concentrations that initiate cracks even in nanostructured Si. Here we describe a novel strategy to mitigate lithiation-induced fracture by using pristine c-Si structures with engineered anisometric morphologies that are deliberately designed tomore » counteract the anisotropy in the crystalline/amorphous interface velocity. This produces a much more uniform volume expansion, significantly reducing strain concentration. Based on a new, validated methodology that improves previous models of anisotropic swelling of c-Si, we propose optimal morphological designs for c-Si pillars and particles. The advantages of the new morphologies are clearly demonstrated by mesoscale simulations and verified by experiments on engineered c-Si micropillars. The results of this study illustrate that morphological design is effective in improving the fracture resistance of micron-sized Si electrodes, which will facilitate their practical application in next-generation Li-ion batteries. In conclusion, the model and design approach present in this paper also have general implications for the study and mitigation of mechanical failure of electrode materials that undergo large anisotropic volume change upon ion insertion and extraction.« less

Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

NASA Astrophysics Data System (ADS)

Hossain, Jaker; Ohki, Tatsuya; Ichikawa, Koki; Fujiyama, Kazuhiko; Ueno, Keiji; Fujii, Yasuhiko; Hanajiri, Tatsuro; Shirai, Hajime

2016-03-01

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated in terms of cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature Ts, and substrate dc bias Vs as variables for efficient PEDOT:PSS/crystalline silicon (c-Si) heterojunction solar cells. The high-speed-camera and differential mobility analysis characterizations revealed that the average size and flux of PEDOT:PSS mist depend on f, type of solvent, and Vs. Film deposition occurred when positive Vs was applied to the c-Si substrate at Ts of 30-40 °C, whereas no deposition of films occurred with negative Vs, implying that the film is deposited mainly from negatively charged mist. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrates by adjusting Ts and Vs. The adhesion of CMD PEDOT:PSS film to c-Si was greatly enhanced by applying substrate dc bias Vs compared with that of spin-coated film. The CMD PEDOT:PSS/c-Si heterojunction solar cell devices on textured c-Si(100) in 2 × 2 cm2 exhibited a power conversion efficiency η of 11.0% with better uniformity of the solar cell parameters. Furthermore, η was increased to 12.5% by adding an AR coating layer of molybdenum oxide MoOx formed by CMD. These findings suggest that CMD with negatively charged mist has great potential for the uniform deposition of organic and inorganic materials on textured c-Si substrates by suitably adjusting Ts and Vs.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Ground calibration of the Silicon Drift Detectors for NICER

NASA Astrophysics Data System (ADS)

LaMarr, Beverly; Prigozhin, Gregory; Remillard, Ronald; Malonis, Andrew; Gendreau, Keith C.; Arzoumanian, Zaven; Markwardt, Craig B.; Baumgartner, Wayne H.

2016-07-01

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the effort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Ground Calibration of the Silicon Drift Detectors for NICER

NASA Technical Reports Server (NTRS)

Lamarr, Beverly; Prigozhin, Gregory; Remillard, Ronald; Malonis, Andrew; Gendreau, Keith C.; Arzoumanian, Zaven; Markwardt, Craig B.; Baumgartner, Wayne H.

2016-01-01

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the e ort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Simulation calculations of efficiencies and silicon consumption for CH3NH3PbI3-x-y Br x Cl y /crystalline silicon tandem solar cells

NASA Astrophysics Data System (ADS)

Zhang, Lili; Xie, Ziang; Tian, Fuyang; Qin, Guogang

2017-04-01

Much attention has been paid to two-subcell tandem solar cells (TSCs) with crystalline silicon (c-Si) as the bottom cell (TSC-Si). Previous works have pointed out that the optimal band gap, E g, of the top cell material for a TSC-Si is around 1.75 eV. With a tunable E g and better stability than MAPbI3 (MA  =  CH3NH3), MAPbI3-x-y Br x Cl y is a promising candidate for the top cell material of a TSC-Si. In this work, calculations concerning the E g, refractive index and extinction coefficient of MAPbI3-x-y Br x Cl y are performed using first-principles calculations including the spin-orbit coupling (SOC) effect. MAPbI3-x-y Br x Cl y with five sets of x and y, which have a E g around 1.75 eV, are obtained. On this basis, absorption of the perovskite top cell is calculated applying the Lambert-Beer model (LBM) and the transfer matrix model (TMM), respectively. Considering the Auger recombination in the c-Si bottom cell and radiation coupling between the two subcells, the efficiencies for MAPbI3-x-y Br x Cl y /c-Si TSCs with the five sets of x and y are calculated. Among them, the MAPbI2.375Br0.5Cl0.125/c-Si TSC achieves the highest efficiency of 35.1% with a 440 nm thick top cell and 50 µm thick c-Si when applying the LBM. When applying the TMM, the highest efficiency of 32.5% is predicted with a 580 nm thick MAPbI2.375Br0.5Cl0.125 top cell and 50 µm thick c-Si. Compared with the limiting efficiency of 27.1% for a 190 µm thick c-Si single junction solar cell (SC), the MAPbI2.375Br0.5Cl0.125/c-Si TSC shows a superior performance of high efficiency and low c-Si consumption.

The PHOBOS detector at RHIC

NASA Astrophysics Data System (ADS)

Back, B. B.; Baker, M. D.; Barton, D. S.; Basilev, S.; Baum, R.; Betts, R. R.; Białas, A.; Bindel, R.; Bogucki, W.; Budzanowski, A.; Busza, W.; Carroll, A.; Ceglia, M.; Chang, Y.-H.; Chen, A. E.; Coghen, T.; Connor, C.; Czyż, W.; Dabrowski, B.; Decowski, M. P.; Despet, M.; Fita, P.; Fitch, J.; Friedl, M.; Gałuszka, K.; Ganz, R.; Garcia, E.; George, N.; Godlewski, J.; Gomes, C.; Griesmayer, E.; Gulbrandsen, K.; Gushue, S.; Halik, J.; Halliwell, C.; Haridas, P.; Hayes, A.; Heintzelman, G. A.; Henderson, C.; Hollis, R.; Hołyński, R.; Hofman, D.; Holzman, B.; Johnson, E.; Kane, J.; Katzy, J.; Kita, W.; Kotuła, J.; Kraner, H.; Kucewicz, W.; Kulinich, P.; Law, C.; Lemler, M.; Ligocki, J.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A.; Mülmenstädt, J.; Neal, M.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Patel, M.; Pernegger, H.; Plesko, M.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Ross, D.; Rosenberg, L.; Ryan, J.; Sanzgiri, A.; Sarin, P.; Sawicki, P.; Scaduto, J.; Shea, J.; Sinacore, J.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Straczek, A.; Stodulski, M.; Strek, M.; Stopa, Z.; Sukhanov, A.; Surowiecka, K.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.; Zalewski, K.; Żychowski, P.; Phobos Collaboration

2003-03-01

This manuscript contains a detailed description of the PHOBOS experiment as it is configured for the Year 2001 running period. It is capable of detecting charged particles over the full solid angle using a multiplicity detector and measuring identified charged particles near mid-rapidity in two spectrometer arms with opposite magnetic fields. Both of these components utilize silicon pad detectors for charged particle detection. The minimization of material between the collision vertex and the first layers of silicon detectors allows for the detection of charged particles with very low transverse momenta, which is a unique feature of the PHOBOS experiment. Additional detectors include a time-of-flight wall which extends the particle identification range for one spectrometer arm, as well as sets of scintillator paddle and Cherenkov detector arrays for event triggering and centrality selection.

Lead salt room-temperature MWIR FPA

NASA Astrophysics Data System (ADS)

Murphy, Paul F.; Jost, Steven R.; Barrett, John L.; Reese, Dan; Winn, Michael L.

2001-10-01

The development of low-cost uncooled thermal LWIR FPAs is resulting in the emergence of a new generation of infrared sensors for applications where affordability is the prerequisite for volume production. Both ferroelectric detector arrays and silicon-based microbolometers are finding numerous applications from gun sights to automotive FLIRs. There would be significant interest in a similar uncooled offering in the MWIR, but to date, thermal detectors have lacked sufficient sensitivity. The existing uncooled MWIR photon detector technology, based on polycrystalline lead salts, has been relegated to single-element detectors and relatively small linear arrays due to the high dark current and the stigma of being a 50-year-old technology.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Heterojunction-Internal-Photoemission Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.

Progress in the medicinal chemistry of silicon: C/Si exchange and beyond.

PubMed

Fujii, Shinya; Hashimoto, Yuichi

2017-04-01

Application of silyl functionalities is one of the most promising strategies among various 'elements chemistry' approaches for the development of novel and distinctive drug candidates. Replacement of one or more carbon atoms of various biologically active compounds with silicon (so-called sila-substitution) has been intensively studied for decades, and is often effective for alteration of activity profile and improvement of metabolic profile. In addition to simple C/Si exchange, several novel approaches for utilizing silicon in medicinal chemistry have been suggested in recent years, focusing on the intrinsic differences between silicon and carbon. Sila-substitution offers great potential for enlarging the chemical space of medicinal chemistry, and provides many options for structural development of drug candidates.

Gamma-ray spectroscopy of 131Sn81 via the (9Be, 8Be γ) reaction

NASA Astrophysics Data System (ADS)

Burcher, Sean; Bey, A.; Jones, K.; Ahn, S. H.; Ayres, A.; Schmitt, K. T.; Allmond, J.; Galindo-Urribari, A.; Radford, D. C.; Liang, J. F.; Neseraja, C. D.; Pain, S. D.; Pittman, S. T.; Smith, M. S.; Stracener, D. W.; Varner, R. L.; Bardayan, D. W.; O'Malley, P. D.; Cizewski, J. A.; Howard, M. E.; Manning, B. M.; Garcia Ruiz, R. F.; Kozub, R. L.; Matos, M.; Padilla-Rodal, E.

2016-09-01

Nuclear data in the region of the doubly-magic nucleus 132Sn82 is useful for benchmarking nuclear structure theories due to the clean single-particle nature of the nuclear wavefunction near the closed shells. At the Holifield Radioactive Ion Beam Facility (HRIBF) neutron-rich beams in the 132Sn82 region were produced via proton-induced fission of a Uranium-Carbide target. The CLARION array of HPGe detectors was coupled with the HyBall array of CsI detectors to allow for particle-gamma coincidence measurements. The gamma-ray de-excitation of the four lowest lying single-neutron states has been observed for the first time via the (9Be,8Be γ) reaction. The excitation energy of these states have been measured to higher precision than was possible with the previous charged particle measurement. This work was supported in part by the U.S. Department of Energy and the National Science Foundation.

A Study of the quality of CsI detectors and pulse-shape discrimination of scintillators for ?[U+0251]-particles, ?[U+0263]-particles, and neutrons

NASA Astrophysics Data System (ADS)

Salyer, Kaitlin; Rogachev, Grigory; Hooker, Joshua

2016-09-01

This project studied the capabilities of two different scintillators, Cesium Iodide (CsI) and p-Terphenyl. First, the resolution of a CsI detector was investigated by exposing only very small areas of its surface at a time to an alpha source. Second, the abilities of p-Terphenyl to detect alpha particles, gamma particles, and neutrons were analyzed through pulse shape discrimination. p-Terphenyl is of particular interest because it will be used in the Mitchell Institute Neutrino Experiment at Reactor (MINER) at Texas A&M University for measuring background data. The information learned from conducting these tests will be useful in understanding and expanding the limits of the experiments in which these detectors will ultimately be used.

a-Si:H TFT-silicon hybrid low-energy x-ray detector

DOE PAGES

Shin, Kyung -Wook; Karim, Karim S.

2017-03-15

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

PubMed

Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

2016-02-01

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Automotive assessment of carbon-silicon composite anodes and methods of fabrication

NASA Astrophysics Data System (ADS)

Karulkar, Mohan; Blaser, Rachel; Kudla, Bob

2015-01-01

To assess the potential of carbon silicon composite anodes for automotive applications, C-Si anodes were fabricated and certain improvements employed. The use of a PVDF buffer layer is demonstrated for the first time with a C-Si composite material. The buffer layer increases adhesion by 89%, and increases capacity by 50-80%. Also, a limited capacity range is employed to improve cycle life by up to 200%, and enable currents as high as 2 mA cm-1. The combined use of a buffer layer and limited capacity range has not been reported before. A model is also presented for comparing C-Si performance with real-world automotive targets from USABC, including energy density, power density, specific energy, and specific power. The analysis reveals a capacity penalty that arises from pairing C-Si with a traditional cathode (NCA), and which prevents the cell from meeting all targets. Scenarios are presented in which a higher-capacity cathode (250 mAh g-1) allows all targets to be hypothetically met.

Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Baochen, E-mail: liaobaochen@nus.edu.sg; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576; A*STAR Institute of Materials Research and Engineering

2014-06-23

In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is foundmore » to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.« less

Characterization of a clinical unit for digital radiography based on irradiation side sampling technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rivetti, Stefano; Lanconelli, Nico; Bertolini, Marco

2013-10-15

Purpose: A characterization of a clinical unit for digital radiography (FUJIFILM FDR D-EVO) is presented. This system is based on the irradiation side sampling (ISS) technology and can be equipped with two different scintillators: one traditional gadolinium-oxysulphide phosphor (GOS) and a needle structured cesium iodide (CsI) phosphor panel.Methods: The characterization was achieved in terms of response curve, modulation transfer function (MTF), noise power spectra (NPS), detective quantum efficiency (DQE), and psychophysical parameters (contrast-detail analysis with an automatic reading of CDRAD images). For both scintillation screens the authors accomplished the measurements with four standard beam conditions: RAQ3, RQA5, RQA7, and RQA9.Results:more » At the Nyquist frequency (3.33 lp/mm) the MTF is about 35% and 25% for CsI and GOS detectors, respectively. The CsI scintillator has better noise properties than the GOS screen in almost all the conditions. This is particularly true for low-energy beams, where the noise for the GOS system can go up to a factor 2 greater than that found for CsI. The DQE of the CsI detector reaches a peak of 60%, 60%, 58%, and 50% for the RQA3, RQA5, RQA7, and RQA9 beams, respectively, whereas for the GOS screen the maximum DQE is 40%, 44%, 44%, and 35%. The contrast-detail analysis confirms that in the majority of cases the CsI scintillator is able to provide improved outcomes to those obtained with the GOS screen.Conclusions: The limited diffusion of light produced by the ISS reading makes possible the achievement of very good spatial resolution. In fact, the MTF of the unit with the CsI panel is only slightly lower to that achieved with direct conversion detectors. The combination of very good spatial resolution, together with the good noise properties reached with the CsI screen, allows achieving DQE on average about 1.5 times greater than that obtained with GOS. In fact, the DQE of unit equipped with CsI is comparable to the best alternative methods available which are based on the same technology, and similar to others based on an a-Se direct conversion detectors.« less

High sensitivity microchannel plate detectors for space extreme ultraviolet missions.

PubMed

Yoshioka, K; Homma, T; Murakami, G; Yoshikawa, I

2012-08-01

Microchannel plate (MCP) detectors have been widely used as two-dimensional photon counting devices on numerous space EUV (extreme ultraviolet) missions. Although there are other choices for EUV photon detectors, the characteristic features of MCP detectors such as their light weight, low dark current, and high spatial resolution make them more desirable for space applications than any other detector. In addition, it is known that the photocathode can be tailored to increase the quantum detection efficiency (QDE) especially for longer UV wavelengths (100-150 nm). There are many types of photocathode materials available, typically alkali halides. In this study, we report on the EUV (50-150 nm) QDE evaluations for MCPs that were coated with Au, MgF(2), CsI, and KBr. We confirmed that CsI and KBr show 2-100 times higher QDEs than the bare photocathode MCPs, while Au and MgF(2) show reduced QDEs. In addition, the optimal geometrical parameters for the CsI deposition were also studied experimentally. The best CsI thickness was found to be 150 nm, and it should be deposited on the inner wall of the channels only where the EUV photons initially impinge. We will also discuss the techniques and procedures for reducing the degradation of the photocathode while it is being prepared on the ground before being deployed in space, as adopted by JAXA's EXCEED mission which will be launched in 2013.

High-resolution extremity cone-beam CT with a CMOS detector: Task-based optimization of scintillator thickness.

PubMed

Cao, Q; Brehler, M; Sisniega, A; Stayman, J W; Yorkston, J; Siewerdsen, J H; Zbijewski, W

2017-03-01

CMOS x-ray detectors offer small pixel sizes and low electronic noise that may support the development of novel high-resolution imaging applications of cone-beam CT (CBCT). We investigate the effects of CsI scintillator thickness on the performance of CMOS detectors in high resolution imaging tasks, in particular in quantitative imaging of bone microstructure in extremity CBCT. A scintillator thickness-dependent cascaded systems model of CMOS x-ray detectors was developed. Detectability in low-, high- and ultra-high resolution imaging tasks (Gaussian with FWHM of ~250 μ m, ~80 μ m and ~40 μ m, respectively) was studied as a function of scintillator thickness using the theoretical model. Experimental studies were performed on a CBCT test bench equipped with DALSA Xineos3030 CMOS detectors (99 μ m pixels) with CsI scintillator thicknesses of 400 μ m and 700 μ m, and a 0.3 FS compact rotating anode x-ray source. The evaluation involved a radiographic resolution gauge (0.6-5.0 lp/mm), a 127 μm tungsten wire for assessment of 3D resolution, a contrast phantom with tissue-mimicking inserts, and an excised fragment of human tibia for visual assessment of fine trabecular detail. Experimental studies show ~35% improvement in the frequency of 50% MTF modulation when using the 400 μ m scintillator compared to the standard nominal CsI thickness of 700 μ m. Even though the high-frequency DQE of the two detectors is comparable, theoretical studies show a 14% to 28% increase in detectability index ( d' 2 ) of high- and ultrahigh resolution tasks, respectively, for the detector with 400 μ m CsI compared to 700 μ m CsI. Experiments confirm the theoretical findings, showing improvements with the adoption of 400 μ m panel in the visibility of the radiographic pattern (2× improvement in peak-to-through distance at 4.6 lp/mm) and a 12.5% decrease in the FWHM of the tungsten wire. Reconstructions of the tibial plateau reveal enhanced visibility of trabecular structures with the CMOS detector with 400 μ m scinitllator. Applications on CMOS detectors in high resolution CBCT imaging of trabecular bone will benefit from using a thinner scintillator than the current standard in general radiography. The results support the translation of the CMOS sensor with 400 μ m CsI onto the clinical prototype of CMOS-based extremity CBCT.

High-resolution extremity cone-beam CT with a CMOS detector: Task-based optimization of scintillator thickness

PubMed Central

Cao, Q.; Brehler, M.; Sisniega, A.; Stayman, J. W.; Yorkston, J.; Siewerdsen, J. H.; Zbijewski, W.

2017-01-01

Purpose CMOS x-ray detectors offer small pixel sizes and low electronic noise that may support the development of novel high-resolution imaging applications of cone-beam CT (CBCT). We investigate the effects of CsI scintillator thickness on the performance of CMOS detectors in high resolution imaging tasks, in particular in quantitative imaging of bone microstructure in extremity CBCT. Methods A scintillator thickness-dependent cascaded systems model of CMOS x-ray detectors was developed. Detectability in low-, high- and ultra-high resolution imaging tasks (Gaussian with FWHM of ~250 μm, ~80 μm and ~40 μm, respectively) was studied as a function of scintillator thickness using the theoretical model. Experimental studies were performed on a CBCT test bench equipped with DALSA Xineos3030 CMOS detectors (99 μm pixels) with CsI scintillator thicknesses of 400 μm and 700 μm, and a 0.3 FS compact rotating anode x-ray source. The evaluation involved a radiographic resolution gauge (0.6–5.0 lp/mm), a 127 μm tungsten wire for assessment of 3D resolution, a contrast phantom with tissue-mimicking inserts, and an excised fragment of human tibia for visual assessment of fine trabecular detail. Results Experimental studies show ~35% improvement in the frequency of 50% MTF modulation when using the 400 μm scintillator compared to the standard nominal CsI thickness of 700 μm. Even though the high-frequency DQE of the two detectors is comparable, theoretical studies show a 14% to 28% increase in detectability index (d′2) of high- and ultrahigh resolution tasks, respectively, for the detector with 400 μm CsI compared to 700 μm CsI. Experiments confirm the theoretical findings, showing improvements with the adoption of 400 μm panel in the visibility of the radiographic pattern (2× improvement in peak-to-through distance at 4.6 lp/mm) and a 12.5% decrease in the FWHM of the tungsten wire. Reconstructions of the tibial plateau reveal enhanced visibility of trabecular structures with the CMOS detector with 400 μm scinitllator. Conclusion Applications on CMOS detectors in high resolution CBCT imaging of trabecular bone will benefit from using a thinner scintillator than the current standard in general radiography. The results support the translation of the CMOS sensor with 400 μm CsI onto the clinical prototype of CMOS-based extremity CBCT. PMID:28989220

"Characterization of ELEKTA SRS cone collimator using high spatial resolution monolithic silicon detector array".

PubMed

Shukaili, Khalsa Al; Corde, Stéphanie; Petasecca, Marco; Pereveratylo, Vladimir; Lerch, Michael; Jackson, Michael; Rosenfeld, Anatoly

2018-05-22

To investigate the accuracy of the dosimetry of radiation fields produced by small ELEKTA cone collimators used for stereotactic radiosurgery treatments (SRS) using commercially available detectors EBT3 Gafchromic TM film, IBA Stereotactic diode (SFD), and the recently developed detector DUO, which is a monolithic silicon orthogonal linear diode array detector. These three detectors were used for the measurement of beam profiles, output factors, and percentage depth dose for SRS cone collimators with cone sizes ranging from 5 to 50 mm diameter. The measurements were performed at 10 cm depth and 90 cm SSD. The SRS cone beam profiles measured with DUO, EBT3 film, and IBA SFD agreed well, results being in agreement within ±0.5 mm in the FWHM, and ±0.7 mm in the penumbra region. The output factor measured by DUO with 0.5 mm air gap above agrees within ±1% with EBT3. The OF measured by IBA SFD (corrected for the over-response) agreed with both EBT3 and DUO within ±2%. All three detectors agree within ±2% for PDD measurements for all SRS cones. The characteristics of the ELEKTA SRS cone collimator have been evaluated by using a monolithic silicon high spatial resolution detector DUO, EBT3, and IBA SFD diode. The DUO detector is suitable for fast real-time quality assurance dosimetry in small radiation fields typical for SRS/SRT. This has been demonstrated by its good agreement of measured doses with EBT 3 films. © 2018 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Geometrical shape design of nanophotonic surfaces for thin film solar cells.

PubMed

Nam, W I; Yoo, Y J; Song, Y M

2016-07-11

We present the effect of geometrical parameters, particularly shape, on optical absorption enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide (GaAs) using a rigorous coupled wave analysis (RCWA) method. It is discovered that the "sweet spot" that maximizes efficiency of solar cells exists for the design of nanophotonic surfaces. For the case of ultrathin, rod array is practical due to the effective optical resonances resulted from the optimum geometry whereas parabola array is viable for relatively thicker cells owing to the effective graded index profile. A specific value of thickness, which is the median value of other two devices tailored by rod and paraboloid, is optimized by truncated shape structure. It is therefore worth scanning the optimum shape of nanostructures in a given thickness in order to achieve high performance.

Achieving an Accurate Surface Profile of a Photonic Crystal for Near-Unity Solar Absorption in a Super Thin-Film Architecture.

PubMed

Kuang, Ping; Eyderman, Sergey; Hsieh, Mei-Li; Post, Anthony; John, Sajeev; Lin, Shawn-Yu

2016-06-28

In this work, a teepee-like photonic crystal (PC) structure on crystalline silicon (c-Si) is experimentally demonstrated, which fulfills two critical criteria in solar energy harvesting by (i) its Gaussian-type gradient-index profile for excellent antireflection and (ii) near-orthogonal energy flow and vortex-like field concentration via the parallel-to-interface refraction effect inside the structure for enhanced light trapping. For the PC structure on 500-μm-thick c-Si, the average reflection is only ∼0.7% for λ = 400-1000 nm. For the same structure on a much thinner c-Si ( t = 10 μm), the absorption is near unity (A ∼ 99%) for visible wavelengths, while the absorption in the weakly absorbing range (λ ∼ 1000 nm) is significantly increased to 79%, comparing to only 6% absorption for a 10-μm-thick planar c-Si. In addition, the average absorption (∼94.7%) of the PC structure on 10 μm c-Si for λ = 400-1000 nm is only ∼3.8% less than the average absorption (∼98.5%) of the PC structure on 500 μm c-Si, while the equivalent silicon solid content is reduced by 50 times. Furthermore, the angular dependence measurements show that the high absorption is sustained over a wide angle range (θinc = 0-60°) for teepee-like PC structure on both 500 and 10-μm-thick c-Si.

Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

NASA Astrophysics Data System (ADS)

Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

2017-01-01

This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

Muon counting using silicon photomultipliers in the AMIGA detector of the Pierre Auger observatory

NASA Astrophysics Data System (ADS)

Aab, A.; Abreu, P.; Aglietta, M.; Ahn, E. J.; Samarai, I. Al; Albuquerque, I. F. M.; Allekotte, I.; Allison, P.; Almela, A.; Alvarez Castillo, J.; Alvarez-Muñiz, J.; Ambrosio, M.; Anastasi, G. A.; Anchordoqui, L.; Andrada, B.; Andringa, S.; Aramo, C.; Arqueros, F.; Arsene, N.; Asorey, H.; Assis, P.; Aublin, J.; Avila, G.; Badescu, A. M.; Balaceanu, A.; Baus, C.; Beatty, J. J.; Becker, K. H.; Bellido, J. A.; Berat, C.; Bertaina, M. E.; Bertou, X.; Biermann, P. L.; Billoir, P.; Biteau, J.; Blaess, S. G.; Blanco, A.; Blazek, J.; Bleve, C.; Boháčová, M.; Boncioli, D.; Bonifazi, C.; Borodai, N.; Botti, A. M.; Brack, J.; Brancus, I.; Bretz, T.; Bridgeman, A.; Briechle, F. L.; Buchholz, P.; Bueno, A.; Buitink, S.; Buscemi, M.; Caballero-Mora, K. S.; Caccianiga, B.; Caccianiga, L.; Cancio, A.; Canfora, F.; Caramete, L.; Caruso, R.; Castellina, A.; Cataldi, G.; Cazon, L.; Cester, R.; Chavez, A. G.; Chiavassa, A.; Chinellato, J. A.; Chudoba, J.; Clay, R. W.; Colalillo, R.; Coleman, A.; Collica, L.; Coluccia, M. R.; Conceição, R.; Contreras, F.; Cooper, M. J.; Coutu, S.; Covault, C. E.; Cronin, J.; Dallier, R.; D'Amico, S.; Daniel, B.; Dasso, S.; Daumiller, K.; Dawson, B. R.; de Almeida, R. M.; de Jong, S. J.; De Mauro, G.; de Mello Neto, J. R. T.; De Mitri, I.; de Oliveira, J.; de Souza, V.; Debatin, J.; del Peral, L.; Deligny, O.; Di Giulio, C.; Di Matteo, A.; Díaz Castro, M. L.; Diogo, F.; Dobrigkeit, C.; D'Olivo, J. C.; Dorofeev, A.; dos Anjos, R. C.; Dova, M. T.; Dundovic, A.; Ebr, J.; Engel, R.; Erdmann, M.; Erfani, M.; Escobar, C. O.; Espadanal, J.; Etchegoyen, A.; Falcke, H.; Fang, K.; Farrar, G.; Fauth, A. C.; Fazzini, N.; Fick, B.; Figueira, J. M.; Filevich, A.; Filipčič, A.; Fratu, O.; Freire, M. M.; Fujii, T.; Fuster, A.; García, B.; Garcia-Pinto, D.; Gaté, F.; Gemmeke, H.; Gherghel-Lascu, A.; Ghia, P. L.; Giaccari, U.; Giammarchi, M.; Giller, M.; Głas, D.; Glaser, C.; Glass, H.; Golup, G.; Gómez Berisso, M.; Gómez Vitale, P. F.; González, N.; Gookin, B.; Gordon, J.; Gorgi, A.; Gorham, P.; Gouffon, P.; Grillo, A. F.; Grubb, T. D.; Guarino, F.; Guedes, G. P.; Hampel, M. R.; Hansen, P.; Harari, D.; Harrison, T. A.; Harton, J. L.; Hasankiadeh, Q.; Haungs, A.; Hebbeker, T.; Heck, D.; Heimann, P.; Herve, A. E.; Hill, G. C.; Hojvat, C.; Holt, E.; Homola, P.; Hörandel, J. R.; Horvath, P.; Hrabovský, M.; Huege, T.; Hulsman, J.; Insolia, A.; Isar, P. G.; Jandt, I.; Jansen, S.; Johnsen, J. A.; Josebachuili, M.; Kääpä, A.; Kambeitz, O.; Kampert, K. H.; Kasper, P.; Katkov, I.; Keilhauer, B.; Kemp, E.; Kieckhafer, R. M.; Klages, H. O.; Kleifges, M.; Kleinfeller, J.; Krause, R.; Krohm, N.; Kuempel, D.; Kukec Mezek, G.; Kunka, N.; Kuotb Awad, A.; LaHurd, D.; Latronico, L.; Lauscher, M.; Lebrun, P.; Legumina, R.; Leigui de Oliveira, M. A.; Letessier-Selvon, A.; Lhenry-Yvon, I.; Link, K.; Lopes, L.; López, R.; López Casado, A.; Luce, Q.; Lucero, A.; Malacari, M.; Mallamaci, M.; Mandat, D.; Mantsch, P.; Mariazzi, A. G.; Mariş, I. C.; Marsella, G.; Martello, D.; Martinez, H.; Martínez Bravo, O.; Masías Meza, J. J.; Mathes, H. J.; Mathys, S.; Matthews, J.; Matthews, J. A. J.; Matthiae, G.; Mayotte, E.; Mazur, P. O.; Medina, C.; Medina-Tanco, G.; Melo, D.; Menshikov, A.; Messina, S.; Micheletti, M. I.; Middendorf, L.; Minaya, I. A.; Miramonti, L.; Mitrica, B.; Mockler, D.; Molina-Bueno, L.; Mollerach, S.; Montanet, F.; Morello, C.; Mostafá, M.; Müller, G.; Muller, M. A.; Müller, S.; Naranjo, I.; Navas, S.; Nellen, L.; Neuser, J.; Nguyen, P. H.; Niculescu-Oglinzanu, M.; Niechciol, M.; Niemietz, L.; Niggemann, T.; Nitz, D.; Nosek, D.; Novotny, V.; Nožka, H.; Núñez, L. A.; Ochilo, L.; Oikonomou, F.; Olinto, A.; Pakk Selmi-Dei, D.; Palatka, M.; Pallotta, J.; Papenbreer, P.; Parente, G.; Parra, A.; Paul, T.; Pech, M.; Pedreira, F.; Pȩkala, J.; Pelayo, R.; Peña-Rodriguez, J.; Pereira, L. A. S.; Perrone, L.; Peters, C.; Petrera, S.; Phuntsok, J.; Piegaia, R.; Pierog, T.; Pieroni, P.; Pimenta, M.; Pirronello, V.; Platino, M.; Plum, M.; Porowski, C.; Prado, R. R.; Privitera, P.; Prouza, M.; Quel, E. J.; Querchfeld, S.; Quinn, S.; Ramos-Pollant, R.; Rautenberg, J.; Ravignani, D.; Reinert, D.; Revenu, B.; Ridky, J.; Risse, M.; Ristori, P.; Rizi, V.; Rodrigues de Carvalho, W.; Rodriguez Fernandez, G.; Rodriguez Rojo, J.; Rodríguez-Frías, M. D.; Rogozin, D.; Rosado, J.; Roth, M.; Roulet, E.; Rovero, A. C.; Saffi, S. J.; Saftoiu, A.; Salazar, H.; Saleh, A.; Salesa Greus, F.; Salina, G.; Sanabria Gomez, J. D.; Sánchez, F.; Sanchez-Lucas, P.; Santos, E. M.; Santos, E.; Sarazin, F.; Sarkar, B.; Sarmento, R.; Sarmiento-Cano, C.; Sato, R.; Scarso, C.; Schauer, M.; Scherini, V.; Schieler, H.; Schmidt, D.; Scholten, O.; Schovánek, P.; Schröder, F. G.; Schulz, A.; Schulz, J.; Schumacher, J.; Sciutto, S. J.; Segreto, A.; Settimo, M.; Shadkam, A.; Shellard, R. C.; Sigl, G.; Silli, G.; Sima, O.; Śmiałkowski, A.; Šmída, R.; Snow, G. R.; Sommers, P.; Sonntag, S.; Sorokin, J.; Squartini, R.; Stanca, D.; Stanič, S.; Stasielak, J.; Strafella, F.; Suarez, F.; Suarez Durán, M.; Sudholz, T.; Suomijärvi, T.; Supanitsky, A. D.; Sutherland, M. S.; Swain, J.; Szadkowski, Z.; Taborda, O. A.; Tapia, A.; Tepe, A.; Theodoro, V. M.; Timmermans, C.; Todero Peixoto, C. J.; Tomankova, L.; Tomé, B.; Tonachini, A.; Torralba Elipe, G.; Torres Machado, D.; Torri, M.; Travnicek, P.; Trini, M.; Ulrich, R.; Unger, M.; Urban, M.; Valbuena-Delgado, A.; Valdés Galicia, J. F.; Valiño, I.; Valore, L.; van Aar, G.; van Bodegom, P.; van den Berg, A. M.; van Vliet, A.; Varela, E.; Vargas Cárdenas, B.; Varner, G.; Vázquez, J. R.; Vázquez, R. A.; Veberič, D.; Verzi, V.; Vicha, J.; Villaseñor, L.; Vorobiov, S.; Wahlberg, H.; Wainberg, O.; Walz, D.; Watson, A. A.; Weber, M.; Weindl, A.; Wiencke, L.; Wilczyński, H.; Winchen, T.; Wittkowski, D.; Wundheiler, B.; Wykes, S.; Yang, L.; Yelos, D.; Yushkov, A.; Zas, E.; Zavrtanik, D.; Zavrtanik, M.; Zepeda, A.; Zimmermann, B.; Ziolkowski, M.; Zong, Z.; Zuccarello, F.

2017-03-01

AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), is proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.

Muon counting using silicon photomultipliers in the AMIGA detector of the Pierre Auger observatory

DOE PAGES

Aab, A.; Abreu, P.; Aglietta, M.; ...

2017-03-03

Here, AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m 2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), ismore » proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.« less

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

NASA Astrophysics Data System (ADS)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (< 10 μm), to handle large particle occupancy, and to require a small fraction of the number of electronic channels of an equivalent pixel detector. The Silicon Vertex Tracker (SVT) for the STAR experiment at RHIC is based on this new technology. The SVT will consist of 216 SDD's, each 6.3 cm by 6.3 cm, arranged in a three layer barrel design, covering 2 π in azimuth and ±1 in pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

PubMed

Aull, Brian

2016-04-08

This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

A CMOS ASIC Design for SiPM Arrays

PubMed Central

Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K.; Miyaoka, Robert S.; Rudell, Jacques C.

2012-01-01

Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM). PMID:24825923

Fundamental x-ray interaction limits in diagnostic imaging detectors: frequency-dependent Swank noise.

PubMed

Hajdok, G; Battista, J J; Cunningham, I A

2008-07-01

A frequency-dependent x-ray Swank factor based on the "x-ray interaction" modulation transfer function and normalized noise power spectrum is determined from a Monte Carlo analysis. This factor was calculated in four converter materials: amorphous silicon (a-Si), amorphous selenium (a-Se), cesium iodide (CsI), and lead iodide (PbI2) for incident photon energies between 10 and 150 keV and various converter thicknesses. When scaled by the quantum efficiency, the x-ray Swank factor describes the best possible detective quantum efficiency (DQE) a detector can have. As such, this x-ray interaction DQE provides a target performance benchmark. It is expressed as a function of (Fourier-based) spatial frequency and takes into consideration signal and noise correlations introduced by reabsorption of Compton scatter and photoelectric characteristic emissions. It is shown that the x-ray Swank factor is largely insensitive to converter thickness for quantum efficiency values greater than 0.5. Thus, while most of the tabulated values correspond to thick converters with a quantum efficiency of 0.99, they are appropriate to use for many detectors in current use. A simple expression for the x-ray interaction DQE of digital detectors (including noise aliasing) is derived in terms of the quantum efficiency, x-ray Swank factor, detector element size, and fill factor. Good agreement is shown with DQE curves published by other investigators for each converter material, and the conditions required to achieve this ideal performance are discussed. For high-resolution imaging applications, the x-ray Swank factor indicates: (i) a-Si should only be used at low-energy (e.g., mammography); (ii) a-Se has the most promise for any application below 100 keV; and (iii) while quantum efficiency may be increased at energies just above the K edge in CsI and PbI2, this benefit is offset by a substantial drop in the x-ray Swank factor, particularly at high spatial frequencies.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guangning; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies ((is) greater than 50%) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

PubMed Central

Contreras, Javier; Costa, Daniel; Pereira, Sonia; Fortunato, Elvira; Martins, Rodrigo; Wierzbicki, Rafal; Heerlein, Holger; Ferreira, Isabel

2010-01-01

The movement of a micro cantilever was detected via a self constructed portable data acquisition prototype system which integrates a linear array of 32 1D amorphous silicon position sensitive detectors (PSD). The system was mounted on a microscope using a metal structure platform and the movement of the 30 μm wide by 400 μm long cantilever was tracked by analyzing the signals acquired by the 32 sensor array electronic readout system and the relevant data algorithm. The obtained results show a linear behavior of the photocurrent relating X and Y movement, with a non-linearity of about 3%, a spatial resolution of less than 2 μm along the lateral dimension of the sensor as well as of less than 3 μm along the perpendicular dimension of the sensor, when detecting just the micro-cantilever, and a spatial resolution of less than 1 μm when detecting the holding structure. PMID:22163648

Indium antimonide large-format detector arrays

NASA Astrophysics Data System (ADS)

Davis, Mike; Greiner, Mark

2011-06-01

Large format infrared imaging sensors are required to achieve simultaneously high resolution and wide field of view image data. Infrared sensors are generally required to be cooled from room temperature to cryogenic temperatures in less than 10 min thousands of times during their lifetime. The challenge is to remove mechanical stress, which is due to different materials with different coefficients of expansion, over a very wide temperature range and at the same time, provide a high sensitivity and high resolution image data. These challenges are met by developing a hybrid where the indium antimonide detector elements (pixels) are unconnected islands that essentially float on a silicon substrate and form a near perfect match to the silicon read-out circuit. Since the pixels are unconnected and isolated from each other, the array is reticulated. This paper shows that the front side illuminated and reticulated element indium antimonide focal plane developed at L-3 Cincinnati Electronics are robust, approach background limited sensitivity limit, and provide the resolution expected of the reticulated pixel array.

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Application of the Langley plot for calibration of sun sensors for the Halogen Occultation Experiment (HALOE)

NASA Technical Reports Server (NTRS)

Moore, Alvah S., Jr.; Mauldin, L. ED, III; Stump, Charles W.; Reagan, John A.; Fabert, Milton G.

1989-01-01

The calibration of the Halogen Occultation Experiment (HALOE) sun sensor is described. This system consists of two energy-balancing silicon detectors which provide coarse azimuth and elevation control signals and a silicon photodiode array which provides top and bottom solar edge data for fine elevation control. All three detectors were calibrated on a mountaintop near Tucson, Ariz., using the Langley plot technique. The conventional Langley plot technique was modified to allow calibration of the two coarse detectors, which operate wideband. A brief description of the test setup is given. The HALOE instrument is a gas correlation radiometer that is now being developed for the Upper Atmospheric Research Satellite.

Limitations on energy resolution of segmented silicon detectors

NASA Astrophysics Data System (ADS)

Wiącek, P.; Chudyba, M.; Fiutowski, T.; Dąbrowski, W.

2018-04-01

In the paper experimental study of charge division effects and energy resolution of X-ray silicon pad detectors are presented. The measurements of electrical parameters, capacitances and leakage currents, for six different layouts of pad arrays are reported. The X-ray spectra have been measured using a custom developed dedicated low noise front-end electronics. The spectra measured for six different detector layouts have been analysed in detail with particular emphasis on quantitative evaluation of charge division effects. Main components of the energy resolution due to Fano fluctuations, electronic noise, and charge division, have been estimated for six different sensor layouts. General recommendations regarding optimisation of pad sensor layout for achieving best possible energy resolution have been formulated.

Extended short wavelength infrared HgCdTe detectors on silicon substrates

NASA Astrophysics Data System (ADS)

Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

2016-09-01

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Visible and infrared linear detector arrays for the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS)

NASA Technical Reports Server (NTRS)

Bailey, Gary C.

1987-01-01

The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) instrument uses four separate focal plane assemblies consisting of line array detectors that are multiplexed to a common J-FET preamp using a FET switch multiplexing (MUX) technique. A 32-element silicon line array covers the spectral range from 0.41 to 0.70 microns. Three additional 64-element indium antimonide (InSb) line arrays cover the spectral range from 0.68 to 2.45 microns. The spectral sampling interval per detector element is nominally 9.8 nm, giving a total of 224 spectral channels. All focal planes operate at liquid nitrogen temperature and are housed in separate dewars. Electrical performance characteristics include a read noise of less than 1000 e(-) in all channels, response and dark nonuniformity of 5 percent peak to peak, and quantum efficiency of greater than 60 percent.

An ab initio study on the effect of iron atom junction on transport characteristics of carbon-silicon mixed chain

NASA Astrophysics Data System (ADS)

Hu, Wei; Zhou, Qinghua; Liu, Wenhua; Liang, Yan; Wang, Tao; Wan, Haiqing

2018-04-01

The effect of iron atom junction on transport characteristics of carbon-silicon mixed chain has been studied from an ab initio study. At zero bias, the Fe(CSi)n system appears to be the decrease of the conductance as the number of the Si-C pairs in the chain increases (n changes). When n > 5, the conductance tends to zero. These changes are independent of the transferring charge of the system, depending on the coupling of the electrodes and the central region. Under bias, the higher the bias voltage, the bigger the transmission coefficient of the system, and the transmission peak moves closer to the Fermi level. The I-V curves of Fe(CSi)2 and Fe (CSi)3 are linear, showing the behavior of metal resistance.

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

NASA Technical Reports Server (NTRS)

Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

1989-01-01

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Characterization of Photon-Counting Detector Responsivity for Non-Linear Two-Photon Absorption Process

NASA Technical Reports Server (NTRS)

Sburlan, S. E.; Farr, W. H.

2011-01-01

Sub-band absorption at 1550 nm has been demonstrated and characterized on silicon Geiger mode detectors which normally would be expected to have no response at this wavelength. We compare responsivity measurements to singlephoton absorption for wavelengths slightly above the bandgap wavelength of silicon (approx. 1100 microns). One application for this low efficiency sub-band absorption is in deep space optical communication systems where it is desirable to track a 1030 nm uplink beacon on the same flight terminal detector array that monitors a 1550 nm downlink signal for pointingcontrol. The currently observed absorption at 1550 nm provides 60-70 dB of isolation compared to the response at 1064 nm, which is desirable to avoid saturation of the detector by scattered light from the downlink laser.

Assembly and evaluation of a pyroelectric detector bonded to vertically aligned multiwalled carbon nanotubes over thin silicon.

PubMed

Theocharous, E; Theocharous, S P; Lehman, J H

2013-11-20

A novel pyroelectric detector consisting of a vertically aligned nanotube array on thin silicon (VANTA/Si) bonded to a 60 μm thick crystal of LiTaO₃ has been fabricated. The performance of the VANTA/Si-coated pyroelectric detector was evaluated using National Physical Laboratory's (NPL's) detector-characterization facilities. The relative spectral responsivity of the detector was found to be spectrally flat in the 0.8-24 μm wavelength range, in agreement with directional-hemispherical reflectance measurements of witness samples of the VANTA. The spatial uniformity of response of the test detector exhibited good uniformity, although the nonuniformity increased with increasing modulation frequency. The nonuniformity may be assigned either to the dimensions of the VANTA or the continuity of the bond between the VANTA/Si coating and the pyroelectric crystal substrate. The test detector exhibited a small superlinear response, which is similar to that of pyroelectric detectors coated with good quality gold-black coatings.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Integrated infrared detector arrays for low-background astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.

1979-01-01

Existing integrated infrared detector array technology is being evaluated under low-background conditions to determine its applicability in orbiting astronomical applications where extended integration times and photometric accuracy are of interest. Preliminary performance results of a 1 x 20 elements InSb CCD array under simulated astronomical conditions are presented. Using the findings of these tests, improved linear- and area-array technology will be developed for use in NASA programs such as the Shuttle Infrared Telescope Facility. For wavelengths less than 30 microns, extrinsic silicon and intrinsic arrays with CCD readout will be evaluated and improved as required, while multiplexed arrays of Ge:Ga for wavelengths in the range 30 to 120 microns will be developed as fundamental understanding of this material improves. Future efforts will include development of improved drive and readout circuitry, and consideration of alternate multiplexing schemes.

Design and Deployment of a Multichroic Polarimeter Array on the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Datta, R.; Austermann, J.; Beall, J. A.; Becker, D.; Coughlin, K. P.; Duff, S. M.; Gallardo, P.A.; Grace, E.; Hasselfield, M.; Henderson, S. W.;

Design and Deployment of a Multichroic Polarimeter Array on the Atacama Cosmology Telescope

NASA Astrophysics Data System (ADS)

Datta, R.; Austermann, J.; Beall, J. A.; Becker, D.; Coughlin, K. P.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Munson, C. D.; Nati, F.; Niemack, M. D.; Page, L.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Schillaci, A.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

We present the design and the preliminary on-sky performance with respect to beams and passbands of a multichroic polarimeter array covering the 90 and 146 GHz cosmic microwave background bands and its enabling broad-band optical system recently deployed on the Atacama Cosmology Telescope (ACT). The constituent pixels are feedhorn-coupled multichroic polarimeters fabricated at NIST. This array is coupled to the ACT telescope via a set of three silicon lenses incorporating novel broad-band metamaterial anti-reflection coatings. This receiver represents the first multichroic detector array deployed for a CMB experiment and paves the way for the extensive use of multichroic detectors and broad-band optical systems in the next generation of CMB experiments.

Fabricating with crystalline Si to improve superconducting detector performance

NASA Astrophysics Data System (ADS)

Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.

2017-05-01

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Development of ultrahigh resolution alpha particle imaging detector using 1 mm channel size Si-PM array

NASA Astrophysics Data System (ADS)

Yamamoto, Seiichi; Kawaguchi, Wataru

2018-06-01

For precise distribution measurements of alpha particles, a high-resolution alpha particle imaging detector is required. Although combining a thin scintillator with a silicon photomultiplier (Si-PM) array is a promising method for achieving high resolution, the spatial resolution is limited. Reducing the size of the Si-PM array is a possible approach to improving the spatial resolution of the alpha particle imaging detector. Consequently, we employed a 1 mm channel size Si-PM array combined with a thin ZnS(Ag) sheet to form an alpha particle imaging detector and evaluated the performance. For the developed alpha particle imaging detector, an Si-PM array with 1 mm x 1 mm channel size arranged 8 x 8 was optically coupled to a ZnS(Ag) sheet with a 1-mm-thick light guide between them. The size of the alpha particle imaging detector was 9.5 mm x 9.5 mm. The spatial resolution of the developed alpha particle imaging detector was 0.14 mm FWHM, and the energy resolution was 74% FWHM for 5.5 MeV alpha particles. The uniformity of the imaging detector at the central part of the field of view (FOV) was ±4.7%. The background count rate was 0.06 counts/min. We obtained various high-resolution phantom images for alpha particles with the developed system. We conclude that the developed imaging detector is promising for high-resolution distribution measurements of alpha particles.

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

NASA Technical Reports Server (NTRS)

Allen, Christine; Benford, Dominic; Miller, Timothy; Staguhn, Johannes; Wollack, Edward; Moseley, Harvey

2007-01-01

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Waveform digitization for high resolution timing detectors with silicon photomultipliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ronzhin, A.; Albrow, M. G.; Los, S.

2012-03-01

The results of time resolution studies with silicon photomultipliers (SiPMs) read out with high bandwidth constant fraction discrimination electronics were presented earlier [1-3]. Here we describe the application of fast waveform digitization readout based on the DRS4 chip [4], a switched capacitor array (SCA) produced by the Paul Scherrer Institute, to further our goal of developing high time resolution detectors based on SiPMs. The influence of the SiPM signal shape on the time resolution was investigated. Different algorithms to obtain the best time resolution are described, and test beam results are presented.

High-energy X-ray diffraction using the Pixium 4700 flat-panel detector.

PubMed

Daniels, J E; Drakopoulos, M

2009-07-01

The Pixium 4700 detector represents a significant step forward in detector technology for high-energy X-ray diffraction. The detector design is based on digital flat-panel technology, combining an amorphous Si panel with a CsI scintillator. The detector has a useful pixel array of 1910 x 2480 pixels with a pixel size of 154 microm x 154 microm, and thus it covers an effective area of 294 mm x 379 mm. Designed for medical imaging, the detector has good efficiency at high X-ray energies. Furthermore, it is capable of acquiring sequences of images at 7.5 frames per second in full image mode, and up to 60 frames per second in binned region of interest modes. Here, the basic properties of this detector applied to high-energy X-ray diffraction are presented. Quantitative comparisons with a widespread high-energy detector, the MAR345 image plate scanner, are shown. Other properties of the Pixium 4700 detector, including a narrow point-spread function and distortion-free image, allows for the acquisition of high-quality diffraction data at high X-ray energies. In addition, high frame rates and shutterless operation open new experimental possibilities. Also provided are the necessary data for the correction of images collected using the Pixium 4700 for diffraction purposes.

Image quality of a pixellated GaAs X-ray detector

NASA Astrophysics Data System (ADS)

Sun, G. C.; Makham, S.; Bourgoin, J. C.; Mauger, A.

2007-02-01

X-ray detection requires materials with large atomic numbers Z in order to absorb the radiation efficiently. In case of X-ray imaging, fluorescence is a limiting factor for the spatial resolution and contrast at energies above the kα threshold. Since both the energy and yield of the fluorescence of a given material increase with the atomic number, there is an optimum value of Z. GaAs, which can now be epitaxially grown as self-supported thick layers to fulfil the requirements for imaging (good homogeneity of the electronic properties) corresponds to this optimum. Image performances obtained with this material are evaluated in terms of line spread function and modulation transfer function, and a comparison with CsI is made. We evaluate the image contrast obtained for a given object contrast with GaAs and CsI detectors, in the photon energy range of medical applications. Finally, we discuss the minimum object size, which can be detected by these detectors in of mammography conditions. This demonstrates that an object of a given size can be detected using a GaAs detector with a dose at least 100 times lower than using a CsI detector.

Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainlymore » from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.« less

Design of an Experiment to Measure ann Using 3H(γ, pn)n at HIγS★

NASA Astrophysics Data System (ADS)

Friesen, F. Q. L.; Ahmed, M. W.; Crowe, B. J.; Crowell, A. S.; Cumberbatch, L. C.; Fallin, B.; Han, Z.; Howell, C. R.; Malone, R. M.; Markoff, D.; Tornow, W.; Witała, H.

2016-03-01

We provide an update on the development of an experiment at TUNL for determining the 1S0 neutron-neutron (nn) scattering length (ann) from differential cross-section measurements of three-body photodisintegration of the triton. The experiment will be conducted using a linearly polarized gamma-ray beam at the High Intensity Gamma-ray Source (HIγS) and tritium gas contained in thin-walled cells. The main components of the planned experiment are a 230 Ci gas target system, a set of wire chambers and silicon strip detectors on each side of the beam axis, and an array of neutron detectors on each side beyond the silicon detectors. The protons emitted in the reaction are tracked in the wire chambers and their energy and position are measured in silicon strip detectors. The first iteration of the experiment will be simplified, making use of a collimator system, and silicon detectors to interrogate the main region of interest near 90° in the polar angle. Monte-Carlo simulations based on rigorous 3N calculations have been conducted to validate the sensitivity of the experimental setup to ann. This research supported in part by the DOE Office of Nuclear Physics Grant Number DE-FG02-97ER41033

β-Decay Studies of r-Process Nuclei Using the Advanced Implantation Detector Array (AIDA)

NASA Astrophysics Data System (ADS)

Griffin, C. J.; Davinson, T.; Estrade, A.; Braga, D.; Burrows, I.; Coleman-Smith, P. J.; Grahn, T.; Grant, A.; Harkness-Brennan, L. J.; Kiss, G.; Kogimtzis, M.; Lazarus, I. H.; Letts, S. C.; Liu, Z.; Lorusso, G.; Matsui, K.; Nishimura, S.; Page, R. D.; Prydderch, M.; Phong, V. H.; Pucknell, V. F. E.; Rinta-Antila, S.; Roberts, O. J.; Seddon, D. A.; Simpson, J.; Thomas, S. L.; Woods, P. J.

Thought to produce around half of all isotopes heavier than iron, the r-process is a key mechanism for nucleosynthesis. However, a complete description of the r-process is still lacking and many unknowns remain. Experimental determination of β-decay half-lives and β-delayed neutron emission probabilities along the r-process path would help to facilitate a greater understanding of this process. The Advanced Implantation Detector Array (AIDA) represents the latest generation of silicon implantation detectors for β-decay studies with fast radioactive ion beams. Preliminary results from commissioning experiments demonstrate successful operation of AIDA and analysis of the data obtained during the first official AIDA experiments is now under-way.

High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

2013-01-01

In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

Evaluation of Matrix9 silicon photomultiplier array for small-animal PET.

PubMed

Du, Junwei; Schmall, Jeffrey P; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S; Buckley, Steve; Jackson, Carl; Cherry, Simon R

2015-02-01

The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL's front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm(2) and the total size of the detector head is 47.8 × 46.3 mm(2). Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0-32.5 V in 0.5 V intervals) and at different temperatures (5 °C-25 °C in 5 °C degree steps) to find the optimal operating conditions. The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. In summary, the Matrix9 detector system can resolve high-resolution scintillator arrays common in small-animal PET with adequate energy resolution and timing resolution over a large detector area. The modular design of the Matrix9 detector allows it to be used as a building block for simple, low channel-count, yet high performance, small animal PET or PET/MRI systems.

Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

PubMed Central

Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

2015-01-01

Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm2 and the total size of the detector head is 47.8 × 46.3 mm2. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can resolve high-resolution scintillator arrays common in small-animal PET with adequate energy resolution and timing resolution over a large detector area. The modular design of the Matrix9 detector allows it to be used as a building block for simple, low channel-count, yet high performance, small animal PET or PET/MRI systems. PMID:25652479

Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Junwei, E-mail: jwdu@ucdavis.edu; Schmall, Jeffrey P.; Yang, Yongfeng

Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm{sup 2} and the total size of the detector head is 47.8 × 46.3 mm{sup 2}. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomographymore » (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can resolve high-resolution scintillator arrays common in small-animal PET with adequate energy resolution and timing resolution over a large detector area. The modular design of the Matrix9 detector allows it to be used as a building block for simple, low channel-count, yet high performance, small animal PET or PET/MRI systems.« less

QBeRT: an innovative instrument for qualification of particle beam in real-time

NASA Astrophysics Data System (ADS)

Gallo, G.; Lo Presti, D.; Bonanno, D. L.; Longhitano, F.; Bongiovanni, D. G.; Reito, S.; Randazzo, N.; Leonora, E.; Sipala, V.; Tommasino, F.

2016-11-01

This paper describes an innovative beam diagnostic and monitoring system composed of a position sensitive detector and a residual range detector, based on scintillating optical fiber and on an innovative read-out strategy and reconstruction algorithm. The position sensitive detector consists of four layers of pre-aligned and juxtaposed scintillating fibres arranged to form two identical overlying and orthogonal planes. The 500 μm square section fibres are optically coupled to two Silicon Photomultiplier arrays using a channel reduction system patented by the Istituto Nazionale di Fisica Nucleare. The residual range detector is a stack of sixty parallel layers of the same fibres used in the position detector, each of which is optically coupled to a channel of Silicon Photomultiplier array by wavelength shifting fibres. The sensitive area of the two detectors is 9 × 9 cm2. After being fully characterized at CATANA proton therapy facility, the performance of the prototypes was tested during last year also at TIFPA proton irradiation facility. The unique feature of these detectors is the possibility to work in imaging conditions (e.g. a particle at a time up to 106 particles per second) and in therapy conditions up to 109 particles per second. The combined use of the two detectors, in imaging conditions, as an example of application, allows the particle radiography of an object. In therapy conditions, in particular, the system measures the position, the profiles, the energy and the fluence of the beam.

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo

2013-12-02

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore » of 609 cm{sup 2} V{sup −1} s{sup −1}.« less

The development of high resolution silicon x-ray microcalorimeters

NASA Astrophysics Data System (ADS)

Porter, F. S.; Kelley, R. L.; Kilbourne, C. A.

2005-12-01

Recently we have produced x-ray microcalorimeters with resolving powers approaching 2000 at 5.9 keV using a spare XRS microcalorimeter array. We attached 400 um square, 8 um thick HgTe absorbers using a variety of attachment methods to an XRS array and ran the detector array at temperatures between 40 and 60 mK. The best results were for absorbers attached using the standard XRS absorber-pixel thermal isolation scheme utilizing SU8 polymer tubes. In this scenario we achieved a resolution of 3.2 eV FWHM at 5.9 keV. Substituting a silicon spacer for the SU8 tubes also yielded sub-4eV results. In contrast, absorbers attached directly to the thermistor produced significant position dependence and thus degraded resolution. Finally, we tested standard 640um-square XRS detectors at reduced bias power at 50mK and achieved a resolution of 3.7eV, a 50% improvement over the XRS flight instrument. Implanted silicon microcalorimeters are a mature flight-qualified technology that still has a substantial phase space for future development. We will discuss these new high resolution results, the various absorber attachment schemes, planned future improvements, and, finally, their relevance to future high resolution x-ray spectrometers including Constellation-X.

Construction of a fast, inexpensive rapid-scanning diode-array detector and spectrometer.

PubMed

Carter, T P; Baek, H K; Bonninghausen, L; Morris, R J; van Wart, H E

1990-10-01

A 512-element diode-array spectroscopic detection system capable of acquiring multiple spectra at a rate of 5 ms per spectrum with an effective scan rate of 102.9 kHz has been constructed. Spectra with fewer diode elements can also be acquired at scan rates up to 128 kHz. The detector utilizes a Hamamatsu silicon photodiode-array sensor that is interfaced to Hamamatsu driver/amplifier and clock generator boards and a DRA laboratories 12-bit 160-kHz analog-to-digital converter. These are standard, commercially available devices which cost approximately $3500. The system is interfaced to and controlled by an IBM XT microcomputer. Detailed descriptions of the home-built detector housing and control/interface circuitry are presented and its application to the study of the reaction of horseradish peroxidase with hydrogen peroxide is demonstrated.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirsh, T. Y.; Perez Galvan, A.; Burkey, M.

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

The use of cosmic-ray muons in the energy calibration of the Beta-decay Paul Trap silicon-detector array

NASA Astrophysics Data System (ADS)

Hirsh, T. Y.; Pérez Gálvan, A.; Burkey, M. T.; Aprahamian, A.; Buchinger, F.; Caldwell, S.; Clark, J. A.; Gallant, A. T.; Heckmaier, E.; Levand, A. F.; Marley, S. T.; Morgan, G. E.; Nystrom, A.; Orford, R.; Savard, G.; Scielzo, N. D.; Segel, R.; Sharma, K. S.; Siegl, K.; Wang, B. S.

2018-04-01

This article presents an approach to calibrate the energy response of double-sided silicon strip detectors (DSSDs) for low-energy nuclear-science experiments by utilizing cosmic-ray muons. For the 1-mm-thick detectors used with the Beta-decay Paul Trap, the minimum-ionizing peak from these muons provides a stable and time-independent in situ calibration point at around 300 keV, which supplements the calibration data obtained above 3 MeV from α sources. The muon-data calibration is achieved by comparing experimental spectra with detailed Monte Carlo simulations performed using GEANT4 and CRY codes. This additional information constrains the calibration at lower energies, resulting in improvements in quality and accuracy.

Gamma ray camera

DOEpatents

Perez-Mendez, V.

1997-01-21

A gamma ray camera is disclosed for detecting rays emanating from a radiation source such as an isotope. The gamma ray camera includes a sensor array formed of a visible light crystal for converting incident gamma rays to a plurality of corresponding visible light photons, and a photosensor array responsive to the visible light photons in order to form an electronic image of the radiation therefrom. The photosensor array is adapted to record an integrated amount of charge proportional to the incident gamma rays closest to it, and includes a transparent metallic layer, photodiode consisting of a p-i-n structure formed on one side of the transparent metallic layer, and comprising an upper p-type layer, an intermediate layer and a lower n-type layer. In the preferred mode, the scintillator crystal is composed essentially of a cesium iodide (CsI) crystal preferably doped with a predetermined amount impurity, and the p-type upper intermediate layers and said n-type layer are essentially composed of hydrogenated amorphous silicon (a-Si:H). The gamma ray camera further includes a collimator interposed between the radiation source and the sensor array, and a readout circuit formed on one side of the photosensor array. 6 figs.

Gamma ray camera

DOEpatents

Perez-Mendez, Victor

1997-01-01

A gamma ray camera for detecting rays emanating from a radiation source such as an isotope. The gamma ray camera includes a sensor array formed of a visible light crystal for converting incident gamma rays to a plurality of corresponding visible light photons, and a photosensor array responsive to the visible light photons in order to form an electronic image of the radiation therefrom. The photosensor array is adapted to record an integrated amount of charge proportional to the incident gamma rays closest to it, and includes a transparent metallic layer, photodiode consisting of a p-i-n structure formed on one side of the transparent metallic layer, and comprising an upper p-type layer, an intermediate layer and a lower n-type layer. In the preferred mode, the scintillator crystal is composed essentially of a cesium iodide (CsI) crystal preferably doped with a predetermined amount impurity, and the p-type upper intermediate layers and said n-type layer are essentially composed of hydrogenated amorphous silicon (a-Si:H). The gamma ray camera further includes a collimator interposed between the radiation source and the sensor array, and a readout circuit formed on one side of the photosensor array.

A micro GC detector array based on chemiresistors employing various surface functionalized monolayer-protected gold nanoparticles.

PubMed

Jian, Rih-Sheng; Huang, Rui-Xuan; Lu, Chia-Jung

2012-01-15

Aspects of the design, fabrication, and characterization of a chemiresistor type of microdetector for use in conjunction with gas chromatograph are described. The detector was manufactured on silicon chips using microelectromechanical systems (MEMS) technology. Detection was based on measuring changes in resistance across a film comprised of monolayer-protected gold nanoclusters (MPCs). When chromatographic separated molecules entered the detector cell, the MPC film absorbed vapor and undergoes swelling, then the resistance changes accordingly. Thiolates were used as ligand shells to encapsulate the nano-gold core and to manipulate the selectivity of the detector array. The dimensions of the μ-detector array were 14(L)×3.9(W)×1.2(H)mm. Mixtures of eight volatile organic compounds with different functional groups and volatility were tested to characterize the selectivity of the μ-detector array. The detector responses were rapid, reversible, and linear for all of the tested compounds. The detection limits ranged from 2 to 111ng, and were related to both the compound volatility and the selectivity of the surface ligands on the gold nanoparticles. Design and operation parameters such as flow rate, detector temperature, and width of the micro-fluidic channel were investigated. Reduction of the detector temperature resulted in improved sensitivity due to increased absorption. When a wider flow channel was used, the signal-to-noise ratio was improved due to the larger sensing area. The extremely low power consumption and small size makes this μ-detector array potentially useful for the development of integrated μ-GC. Copyright © 2011 Elsevier B.V. All rights reserved.

Integrating IR detector imaging systems

NASA Technical Reports Server (NTRS)

Bailey, G. C. (Inventor)

1984-01-01

An integrating IR detector array for imaging is provided in a hybrid circuit with InSb mesa diodes in a linear array, a single J-FET preamplifier for readout, and a silicon integrated circuit multiplexer. Thin film conductors in a fan out pattern deposited on an Al2O3 substrate connect the diodes to the multiplexer, and thick film conductors also connect the reset switch and preamplifier to the multiplexer. Two phase clock pulses are applied with a logic return signal to the multiplexer through triax comprised of three thin film conductors deposited between layers. A lens focuses a scanned image onto the diode array for horizontal read out while a scanning mirror provides vertical scan.

Status of the isophot detector development

NASA Technical Reports Server (NTRS)

Wolf, J.; Lemke, D.; Burgdorf, M.; Groezinger, U.; Hajduk, CH.

1989-01-01

ISOPHOT is one of the four focal plane experiments of the European Space Agency's Infrared Space Observatory (ISO). Scheduled for a 1993 launch, it will operate extrinsic silicon and germanium photoconductors at low temperature and low background during the longer than 18 month mission. These detectors cover the wavelength range from 2.5 to 200 microns and are used as single elements and in arrays. A cryogenic preamplifier was developed to read out a total number of 223 detector pixels.

New generation of Cherenkov counters

NASA Astrophysics Data System (ADS)

Giomataris, Y.; Charpak, G.; Peskov, V.; Sauli, F.

1992-12-01

Experimental results with a parallel plate avalanche chamber (PPAC) having a CsI photocathode and pad array readout are reported. High gains in excess of 10 5 have been obtained with He gas at atmospheric pressure and traces of CH 4 or CF 4 quencher. Such light gas mixtures extend the transparency for the Cherenkov light to the extreme UV region and allow detector operation with very low sensitivity to the ionization produced by minimum ionizing particles. A hadron blind detector (HBD) is discussed which exploits the broad photon energy bandwidth (≈ 10 eV) and the high Cherenkov threshold ( pπ = 15 GeV). This fast detector, since it has a good spatial resolution, can be used at the future Large Hadron Collider (LHC) or the Superconductivity Super Collider (SSC) either as an efficient electron tagger, rejecting hadrons faking electrons in the calorimeter, or as a pretracker giving fast electron and high-energy muon signature and momentum estimation. Other potential applications in the domain of Cherenkov light detection are also discussed.

Performance study of single undoped CsI crystals for the Mu2e experiment

NASA Astrophysics Data System (ADS)

Donghia, R.; Mu2e Calorimeter Group

2016-03-01

The Mu2e experiment at Fermilab aims to measure the neutrinoless muon-to-electron conversion, which is a charged-lepton flavor-violating process. The goal of the experiment is to reach a single event sensitivity of 2.5 × 10^{-17} , to set an upper limit on the muon conversion rate at 6.7 × 10^{-17} in a three-year run. For this purpose, the Mu2e detector is designed to identify electrons from muon conversion and reduce the background to a negligible level. It consists of a low-mass straw tracker and a pure CsI crystal calorimeter. In this paper, the performance of undoped CsI single crystal is reported. Crystals from many vendors have been characterized by determining their Light Yield (LY) and Longitudinal Response Uniformity (LRU), when read with a UV extended PMT, and their time resolution when coupled to a silicon photomultiplier. The crystals show a LY of ˜100 photoelectrons per MeV when wrapped with Tyvek and coupled to the PMT without optical grease. The LRU is well represented by a linear slope that is on average 0.6%/cm. Both measurements have been performed using a ^{22} Na source. The timing performance has been evaluated exploiting cosmic rays, with MPPC readout. A timing resolution lower than 400ps has been achieved (at ˜20{ MeV} , which is the energy released by a minimum ionizing particle in the crystal).

Additives to silane for thin film silicon photovoltaic devices

DOEpatents

Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

2013-09-17

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Geometry Survey of the Time-of-Flight Neutron-Elastic Scattering (Antonella) Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oshinowo, Babatunde O.; Izraelevitch, Federico

The Antonella experiment is a measurement of the ionization efficiency of nuclear recoils in silicon at low energies [1]. It is a neutron elastic scattering experiment motivated by the search for dark matter particles. In this experiment, a proton beam hits a lithium target and neutrons are produced. The neutron shower passes through a collimator that produces a neutron beam. The beam illuminates a silicon detector. With a certain probability, a neutron interacts with a silicon nucleus of the detector producing elastic scattering. After the interaction, a fraction of the neutron energy is transferred to the silicon nucleus which acquiresmore » kinetic energy and recoils. This kinetic energy is then dissipated in the detector producing ionization and thermal energy. The ionization produced is measured with the silicon detector electronics. On the other hand, the neutron is scattered out of the beam. A neutron-detector array (made of scintillator bars) registers the neutron arrival time and the scattering angle to reconstruct the kinematics of the neutron-nucleus interaction with the time-of-flight technique [2]. In the reconstruction equations, the energy of the nuclear recoil is a function of the scattering angle with respect to the beam direction, the time-of-flight of the neutron and the geometric distances between components of the setup (neutron-production target, silicon detector, scintillator bars). This paper summarizes the survey of the different components of the experiment that made possible the off-line analysis of the collected data. Measurements were made with the API Radian Laser Tracker and I-360 Probe Wireless. The survey was completed at the University of Notre Dame, Indiana, USA in February 2015.« less

Characterization of an ultraviolet imaging detector with high event rate ROIC (HEROIC) readout

NASA Astrophysics Data System (ADS)

Nell, Nicholas; France, Kevin; Harwit, Alex; Bradley, Scott; Franka, Steve; Freymiller, Ed; Ebbets, Dennis

2016-07-01

We present characterization results from a photon counting imaging detector consisting of one microchannel plate (MCP) and an array of two readout integrated circuits (ROIC) that record photon position. The ROICs used in the position readout are the high event rate ROIC (HEROIC) devices designed to handle event rates up to 1 MHz per pixel, recently developed by the Ball Aerospace and Technologies Corporation in collaboration with the University of Colorado. An opaque cesium iodide (CsI) photocathode sensitive in the far-ultraviolet (FUV; 122-200 nm), is deposited on the upper surface of the MCP. The detector is characterized in a chamber developed by CU Boulder that is capable of illumination with vacuum-ultraviolet (VUV) monochromatic light and measurement of absolute ux with a calibrated photodiode. Testing includes investigation of the effects of adjustment of internal settings of the HEROIC devices including charge threshold, gain, and amplifier bias. The detector response to high count rates is tested. We report initial results including background, uniformity, and quantum detection efficiency (QDE) as a function of wavelength.

Energy-resolved CT imaging with a photon-counting silicon-strip detector

NASA Astrophysics Data System (ADS)

Persson, Mats; Huber, Ben; Karlsson, Staffan; Liu, Xuejin; Chen, Han; Xu, Cheng; Yveborg, Moa; Bornefalk, Hans; Danielsson, Mats

2014-03-01

Photon-counting detectors are promising candidates for use in the next generation of x-ray CT scanners. Among the foreseen benefits are higher spatial resolution, better trade-off between noise and dose, and energy discriminating capabilities. Silicon is an attractive detector material because of its low cost, mature manufacturing process and high hole mobility. However, it is sometimes claimed to be unsuitable for use in computed tomography because of its low absorption efficiency and high fraction of Compton scatter. The purpose of this work is to demonstrate that high-quality energy-resolved CT images can nonetheless be acquired with clinically realistic exposure parameters using a photon-counting silicon-strip detector with eight energy thresholds developed in our group. We use a single detector module, consisting of a linear array of 50 0.5 × 0.4 mm detector elements, to image a phantom in a table-top lab setup. The phantom consists of a plastic cylinder with circular inserts containing water, fat and aqueous solutions of calcium, iodine and gadolinium, in different concentrations. We use basis material decomposition to obtain water, calcium, iodine and gadolinium basis images and demonstrate that these basis images can be used to separate the different materials in the inserts. We also show results showing that the detector has potential for quantitative measurements of substance concentrations.

Study of n- γ discrimination by zero-crossing method with SiPM based scintillation detectors

NASA Astrophysics Data System (ADS)

Grodzicka-Kobylka, M.; Szczesniak, T.; Moszyński, M.; Swiderski, L.; Wolski, D.; Baszak, J.; Korolczuk, S.; Schotanus, P.

2018-03-01

The paper presents a study of n / γ discrimination with 4x4 ch and 8x8 ch Multi Pixel Photon Counter (MPPC) arrays in neutron detectors based on Stilbene and EJ299-33 plastic scintillators. The n / γ discrimination showed an excellent capability of the MPPC arrays, comparable to that observed earlier with the classical PMTs. Particularly, an application of a zero-crossing method of n - γ discrimination prevented deterioration of the discrimination by the slow response of the Silicon Photomultiplier (SiPM, or MPPC interchangeably) array related to its large capacitance. It was confirmed by a good agreement of the Figure of Merit normalized to the number of photoelectrons determined for the MPPC arrays and XP5500 PMT.

Performance of charge-injection-device infrared detector arrays at low and moderate backgrounds

NASA Technical Reports Server (NTRS)

Mckelvey, M. E.; Mccreight, C. R.; Goebel, J. H.; Reeves, A. A.

1985-01-01

Three 2 x 64 element charge injection device infrared detector arrays were tested at low and moderate background to evaluate their usefulness for space based astronomical observations. Testing was conducted both in the laboratory and in ground based telescope observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3x10 sq root of W/Hz. Array well capacity was measured to be significantly smaller than predicted. The measured sensitivity, which compares well with that of nonintegrating discrete extrinsic silicon photoconductors, shows these arrays to be useful for certain astronomical observations. However, the measured readout efficiency and frequency response represent serious limitations in low background applications.

14C autoradiography with an energy-sensitive silicon pixel detector.

PubMed

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, TImothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nicholas P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Efficient scalable solid-state neutron detector.

PubMed

Moses, Daniel

2015-06-01

We report on scalable solid-state neutron detector system that is specifically designed to yield high thermal neutron detection sensitivity. The basic detector unit in this system is made of a (6)Li foil coupled to two crystalline silicon diodes. The theoretical intrinsic efficiency of a detector-unit is 23.8% and that of detector element comprising a stack of five detector-units is 60%. Based on the measured performance of this detector-unit, the performance of a detector system comprising a planar array of detector elements, scaled to encompass effective area of 0.43 m(2), is estimated to yield the minimum absolute efficiency required of radiological portal monitors used in homeland security.

Fabrication of an X-Ray Imaging Detector

NASA Technical Reports Server (NTRS)

Alcorn, G. E.; Burgess, A. S.

1986-01-01

X-ray detector array yields mosaic image of object emitting 1- to 30-keV range fabricated from n-doped silicon wafer. In proposed fabrication technique, thin walls of diffused n+ dopant divide wafer into pixels of rectangular cross section, each containing central electrode of thermally migrated p-type metal. This pnn+ arrangement reduces leakage current by preventing transistor action caused by pnp structure of earlier version.

A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Davis, Kristopher O.; Walters, Joseph; Schneller, Eric; Seigneur, Hubert; Brooker, R. Paul; Scardera, Giuseppe; Rodgers, Marianne P.; Mohajeri, Nahid; Shiradkar, Narendra; Dhere, Neelkanth G.; Wohlgemuth, John; Rudack, Andrew C.; Schoenfeld, Winston V.

2014-10-01

In this work, the use of manufacturing metrology across the supply chain to improve crystalline silicon (c-Si) photovoltaic (PV) module reliability and durability is addressed. Additionally, an overview and summary of a recent extensive literature survey of relevant measurement techniques aimed at reducing or eliminating the probability of field failures is presented. An assessment of potential gaps is also given, wherein the PV community could benefit from new research and demonstration efforts. This review is divided into three primary areas representing different parts of the c-Si PV supply chain: (1) feedstock production, crystallization and wafering; (2) cell manufacturing; and (3) module manufacturing.

Monolithic integration of hybrid perovskite single crystals with heterogenous substrate for highly sensitive X-ray imaging

NASA Astrophysics Data System (ADS)

Wei, Wei; Zhang, Yang; Xu, Qiang; Wei, Haotong; Fang, Yanjun; Wang, Qi; Deng, Yehao; Li, Tao; Gruverman, Alexei; Cao, Lei; Huang, Jinsong

2017-04-01

The monolithic integration of new optoelectronic materials with well-established inexpensive silicon circuitry is leading to new applications, functionality and simple readouts. Here, we show that single crystals of hybrid perovskites can be integrated onto virtually any substrates, including silicon wafers, through facile, low-temperature, solution-processed molecular bonding. The brominated (3-aminopropyl)triethoxysilane molecule binds the native oxide of silicon and participates in the perovskite crystal with its ammonium bromide group, yielding a solid mechanical and electrical connection. The dipole of the bonding molecule reduces device noise while retaining signal intensity. The reduction of dark current enables the detectors to be operated at increased bias, resulting in a sensitivity of 2.1 × 104 µC Gyair-1 cm-2 under 8 keV X-ray radiation, which is over a thousand times higher than the sensitivity of amorphous selenium detectors. X-ray imaging with both perovskite pixel detectors and linear array detectors reduces the total dose by 15-120-fold compared with state-of-the-art X-ray imaging systems.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

NeutronSTARS: A segmented neutron and charged particle detector for low-energy reaction studies

DOE PAGES

Akindele, O. A.; Casperson, R. J.; Wang, B. S.; ...

2017-08-10

NeutronSTARS (Neutron-S ilicon T elescope A rray for R eaction S tudies) consists of 2.2-tons of gadolinium-doped liquid scintillator for neutron detection and large area silicon detectors for charged particle identification. This detector array is intended for low-energy-nuclear-reaction measurements that result in the emission of neutrons such as and fission. This paper describes the NeutronSTARS experimental setup, calibration, and the array’s response to neutral and charged particles.

Method of fabricating an imaging X-ray spectrometer

NASA Technical Reports Server (NTRS)

Alcorn, G. E. (Inventor); Burgess, A. S. (Inventor)

1986-01-01

A process for fabricating an X-ray spectrometer having imaging and energy resolution of X-ray sources is discussed. The spectrometer has an array of adjoinging rectangularly shaped detector cells formed in a silicon body. The walls of the cells are created by laser drilling holes completely through the silicon body and diffusing n(+) phosphorous doping material therethrough. A thermally migrated aluminum electrode is formed centrally through each of the cells.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Nanopillar arrays on semiconductor membranes as electron emission amplifiers.

PubMed

Qin, Hua; Kim, Hyun-Seok; Blick, Robert H

2008-03-05

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The secondary electron yield (SEY) from the nanopillars in the current device is found to be about 1.8 times that of the plain silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of the NPM and an application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in an NPM system stimulated by incident particles or radiation.

A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

PubMed

Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

2018-02-01

The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector response was studied experimentally and characterized using a Monte Carlo simulation. The sDMG detector was found to accurately determine the 12 C beam energy and is suited for fast energy and range verification quality assurance. It is proposed that the sDMG is also applicable for verification of treatment planning systems that rely on particle range. © 2017 American Association of Physicists in Medicine.

Basic performance evaluation of a Si-PM array-based LGSO phoswich DOI block detector for a high-resolution small animal PET system.

PubMed

Yamamoto, Seiichi

2013-07-01

The silicon photomultiplier (Si-PM) is a promising photodetector for PET. However, it remains unclear whether Si-PM can be used for a depth-of-interaction (DOI) detector based on the decay time differences of the scintillator where pulse shape analysis is used. For clarification, we tested the Hamamatsu 4 × 4 Si-PM array (S11065-025P) combined with scintillators that used different decay times to develop DOI block detectors using the pulse shape analysis. First, Ce-doped Gd(2)SiO(5) (GSO) scintillators of 0.5 mol% Ce were arranged in a 4 × 4 matrix and were optically coupled to the center of each pixel of the Si-PM array for measurement of the energy resolution as well as its gain variations according to the temperature. Then two types of Ce-doped Lu(1.9)Gd(0.1)Si0(5) (LGSO) scintillators, 0.025 mol% Ce (decay time: ~31 ns) and 0.75 mol% Ce (decay time: ~46 ns), were optically coupled in the DOI direction, arranged in a 11 × 7 matrix, and optically coupled to a Si-PM array for testing of the possibility of a high-resolution DOI detector. The energy resolution of the Si-PM array-based GSO block detector was 18 ± 4.4 % FWHM for a Cs-137 gamma source (662 keV). Less than 1 mm crystals were clearly resolved in the position map of the LGSO DOI block detector. The peak-to-valley ratio (P/V) derived from the pulse shape spectra of the LGSO DOI block detector was 2.2. These results confirmed that Si-PM array-based DOI block detectors are promising for high-resolution small animal PET systems.

Experimental evaluation of the resolution improvement provided by a silicon PET probe.

PubMed

Brzeziński, K; Oliver, J F; Gillam, J; Rafecas, M; Studen, A; Grkovski, M; Kagan, H; Smith, S; Llosá, G; Lacasta, C; Clinthorne, N H

2016-09-01

A high-resolution PET system, which incorporates a silicon detector probe into a conventional PET scanner, has been proposed to obtain increased image quality in a limited region of interest. Detailed simulation studies have previously shown that the additional probe information improves the spatial resolution of the reconstructed image and increases lesion detectability, with no cost to other image quality measures. The current study expands on the previous work by using a laboratory prototype of the silicon PET-probe system to examine the resolution improvement in an experimental setting. Two different versions of the probe prototype were assessed, both consisting of a back-to-back pair of 1-mm thick silicon pad detectors, one arranged in 32 × 16 arrays of 1.4 mm × 1.4 mm pixels and the other in 40 × 26 arrays of 1.0 mm × 1.0 mm pixels. Each detector was read out by a set of VATAGP7 ASICs and a custom-designed data acquisition board which allowed trigger and data interfacing with the PET scanner, itself consisting of BGO block detectors segmented into 8 × 6 arrays of 6 mm × 12 mm × 30 mm crystals. Limited-angle probe data was acquired from a group of Na-22 point-like sources in order to observe the maximum resolution achievable using the probe system. Data from a Derenzo-like resolution phantom was acquired, then scaled to obtain similar statistical quality as that of previous simulation studies. In this case, images were reconstructed using measurements of the PET ring alone and with the inclusion of the probe data. Images of the Na-22 source demonstrated a resolution of 1.5 mm FWHM in the probe data, the PET ring resolution being approximately 6 mm. Profiles taken through the image of the Derenzo-like phantom showed a clear increase in spatial resolution. Improvements in peak-to-valley ratios of 50% and 38%, in the 4.8 mm and 4.0 mm phantom features respectively, were observed, while previously unresolvable 3.2 mm features were brought to light by the addition of the probe. These results support the possibility of improving the image resolution of a clinical PET scanner using the silicon PET-probe.

Development of New High Resolution Neutron Detector

NASA Astrophysics Data System (ADS)

Mostella, L. D., III; Rajabali, M.; Loureiro, D. P.; Grzywacz, R.

2017-09-01

Beta-delayed neutron emission is a prevalent form of decay for neutron-rich nuclei. This occurs when an unstable nucleus undergoes beta decay, but produces a daughter nucleus in an excited state above the neutron separation energy. The daughter nucleus then de-excites by ejecting one or more neutrons. We wish to map the states from which these nuclei decay via neutron spectroscopy using NEXT, a new high resolution neutron detector. NEXT utilizes silicon photomultipliers and 6 mm thick pulse-shape discriminating plastic scintillators, allowing for smaller and more compact modular geometries in the NEXT array. Timing measurements for the detector were performed and a resolution of 893 ps (FWHM) has been achieved so far. Aspects of the detector that were investigated and will be presented here include scintillator geometry, wrapping materials, fitting functions for the digitized signals, and electronic components coupled to the silicon photomultipliers for signal shaping.

Initial astronomical results with a new 5-14 micron Si:Ga 58x62 DRO array camera

NASA Technical Reports Server (NTRS)

Gezari, Dan; Folz, Walter; Woods, Larry

1989-01-01

A new array camera system was developed using a 58 x 62 pixel Si:Ga (gallium doped silicon) DRO (direct readout) photoconductor array detector manufactured by Hughes/Santa Barbara Research Center (SBRC). The camera system is a broad band photometer designed for 5 to 14 micron imaging with large ground-based optical telescopes. In a typical application a 10 micron photon flux of about 10(exp 9) photons sec(exp -1) m(exp -2) microns(exp -1) arcsec(exp -2) is incident in the telescope focal plane, while the detector well capacity of these arrays is 10(exp 5) to 10 (exp 6) electrons. However, when the real efficiencies and operating conditions are accounted for, the 2-channel 3596 pixel array operates with about 1/2 full wells at 10 micron and 10% bandwidth with high duty cycle and no real experimental compromises.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, P; Cammin, J; Solberg, T

Purpose: Proton radiography and proton computed tomography (PCT) can be used to measure proton stopping power directly. However, practical and cost effective proton imaging detectors are not widely available. In this study, the authors investigated the feasibility of proton imaging using a silicon diode array. Methods: A one-dimensional silicon-diode detector array (1DSDA) was aligned with the central axis (CAX) of the proton beam. Polymethyl methacrylate (PMMA) slabs were used to find the correspondence between the water equivalent thickness (WET) and 1DSDA channel number. 2D proton radiographs (PR) were obtained by translation and rotation of a phantom relative to CAX whilemore » the proton nozzle and 1DSDA were kept stationary. A PCT image of one slice of the phantom was reconstructed using filtered backprojection. Results: PR and PCT images of the PMMA cube were successfully acquired using the 1DSDA. The WET of the phantom was measured using PR data with an accuracy of 4.2% or better. Structures down to 1 mm in size could be resolved. Reconstruction of a PCT image showed very good agreement with simulation. Limitations in spatial resolution are attributed to limited spatial sampling, beam collimation, and proton scatter. Conclusion: The results demonstrate the feasibility of using silicon diode arrays for proton imaging. Such a device can potentially offer fast image acquisition, high spatial and energy resolution for PR and PCT.« less

Two-photon Shack-Hartmann wavefront sensor.

PubMed

Xia, Fei; Sinefeld, David; Li, Bo; Xu, Chris

2017-03-15

We introduce a simple wavefront sensing scheme for aberration measurement of pulsed laser beams in near-infrared wavelengths (<2200  nm), where detectors are not always available or are very expensive. The method is based on two-photon absorption in a silicon detector array for longer wavelengths detection. We demonstrate the simplicity of such implementations with a commercially available Shack-Hartmann wavefront sensor and discuss the detection sensitivity of this method.

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

PubMed

Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2012-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems

PubMed Central

Dey, Samrat; Lewellen, Thomas K.; Miyaoka, Robert S.; Rudell, Jacques C.

2013-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs). PMID:24301987

Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

NASA Astrophysics Data System (ADS)

Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

2018-04-01

A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

Modeling and designing multilayer 2D perovskite / silicon bifacial tandem photovoltaics for high efficiencies and long-term stability.

PubMed

Chung, Haejun; Sun, Xingshu; Mohite, Aditya D; Singh, Rahul; Kumar, Lokendra; Alam, Muhammad A; Bermel, Peter

2017-04-17

A key challenge in photovoltaics today is to develop cell technologies with both higher efficiencies and lower fabrication costs than incumbent crystalline silicon (c-Si) single-junction cells. While tandem cells have higher efficiencies than c-Si alone, it is generally challenging to find a low-cost, high-performance material to pair with c-Si. However, the recent emergence of 22% efficient perovskite photovoltaics has created a tremendous opportunity for high-performance, low-cost perovskite / crystalline silicon tandem photovoltaic cells. Nonetheless, two key challenges remain. First, integrating perovskites into tandem structures has not yet been demonstrated to yield performance exceeding commercially available crystalline silicon modules. Second, the stability of perovskites is inconsistent with the needs of most end-users, who install photovoltaic modules to produce power for 25 years or more. Making these cells viable thus requires innovation in materials processing, device design, fabrication, and yield. We will address these two gaps in the photovoltaic literature by investigating new types of 2D perovskite materials with n-butylammonium spacer layers, and integrating these materials into bifacial tandem solar cells providing at least 30% normalized power production. We find that an optimized 2D perovskite ((BA)₂(MA)₃(Sn_0.6Pb_0.4)₄I₁₃)/silicon bifacial tandem cell, given a globally average albedo of 30%, yields a normalized power production of 30.31%, which should be stable for extended time periods without further change in materials or encapsulation.

Rad-hard Dual-threshold High-count-rate Silicon Pixel-array Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Adam

In this program, a Voxtel-led team demonstrates a full-format (192 x 192, 100-µm pitch, VX-810) high-dynamic-range x-ray photon-counting sensor—the Dual Photon Resolved Energy Acquisition (DUPREA) sensor. Within the Phase II program the following tasks were completed: 1) system analysis and definition of the DUPREA sensor requirements; 2) design, simulation, and fabrication of the full-format VX-810 ROIC design; 3) design, optimization, and fabrication of thick, fully depleted silicon photodiodes optimized for x-ray photon collection; 4) hybridization of the VX-810 ROIC to the photodiode array in the creation of the optically sensitive focal-plane array; 5) development of an evaluation camera; and 6)more » electrical and optical characterization of the sensor.« less

A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

NASA Astrophysics Data System (ADS)

Gray, Kory Forrest

The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric detector with a D* of 3 * 107 cm Hz 0.5/W was demonstrated with a time response of 3-10 milliseconds. With this initial research, it is possible to improve the D* to the high 108 cm Hz 0.5/W range by slightly changing the design of the thermopile and patterning the absorption layer.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

X-ray imaging performance of scintillator-filled silicon pore arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, Matthias; Engel, Klaus Juergen; Menser, Bernd

2008-03-15

The need for fine detail visibility in various applications such as dental imaging, mammography, but also neurology and cardiology, is the driver for intensive efforts in the development of new x-ray detectors. The spatial resolution of current scintillator layers is limited by optical diffusion. This limitation can be overcome by a pixelation, which prevents optical photons from crossing the interface between two neighboring pixels. In this work, an array of pores was etched in a silicon wafer with a pixel pitch of 50 {mu}m. A very high aspect ratio was achieved with wall thicknesses of 4-7 {mu}m and pore depthsmore » of about 400 {mu}m. Subsequently, the pores were filled with Tl-doped cesium iodide (CsI:Tl) as a scintillator in a special process, which includes powder melting and solidification of the CsI. From the sample geometry and x-ray absorption measurement the pore fill grade was determined to be 75%. The scintillator-filled samples have a circular active area of 16 mm diameter. They are coupled with an optical sensor binned to the same pixel pitch in order to measure the x-ray imaging performance. The x-ray sensitivity, i.e., the light output per absorbed x-ray dose, is found to be only 2.5%-4.5% of a commercial CsI-layer of similar thickness, thus very low. The efficiency of the pores to transport the generated light to the photodiode is estimated to be in the best case 6.5%. The modulation transfer function is 40% at 4 lp/mm and 10%-20% at 8 lp/mm. It is limited most likely by the optical gap between scintillator and sensor and by K-escape quanta. The detective quantum efficiency (DQE) is determined at different beam qualities and dose settings. The maximum DQE(0) is 0.28, while the x-ray absorption with the given thickness and fill factor is 0.57. High Swank noise is suspected to be the reason, mainly caused by optical scatter inside the CsI-filled pores. The results are compared to Monte Carlo simulations of the photon transport inside the pore array structure. In addition, some x-ray images of technical and anatomical phantoms are shown. This work shows that scintillator-filled pore arrays can provide x-ray imaging with high spatial resolution, but are not suitable in their current state for most of the applications in medical imaging, where increasing the x-ray doses cannot be tolerated.« less

Intelligent Front-end Electronics for Silicon photodetectors (IFES)

NASA Astrophysics Data System (ADS)

Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

2016-05-01

While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

Design and simulation of a planar micro-optic free-space receiver

NASA Astrophysics Data System (ADS)

Nadler, Brett R.; Hallas, Justin M.; Karp, Jason H.; Ford, Joseph E.

2017-11-01

We propose a compact directional optical receiver for free-space communications, where a microlens array and micro-optic structures selectively couple light from a narrow incidence angle into a thin slab waveguide and then to an edge-mounted detector. A small lateral translation of the lenslet array controls the coupled input angle, enabling the receiver to select the transmitter source direction. We present the optical design and simulation of a 10mm x 10mm aperture receiver using a 30μm thick silicon waveguide able to couple up to 2.5Gbps modulated input to a 10mm x 30μm wide detector.

Hot-spot durability testing of amorphous cells and modules

NASA Technical Reports Server (NTRS)

Gonzalez, Charles; Jetter, Elizabeth

1985-01-01

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Alexander; Florent, Karine; Tapriya, Astha

Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

Examining the free radical bonding mechanism of benzoquinone- and hydroquinone-methanol passivation of silicon surfaces

NASA Astrophysics Data System (ADS)

Kotulak, Nicole A.; Chen, Meixi; Schreiber, Nikolas; Jones, Kevin; Opila, Robert L.

2015-11-01

The surface passivation of p-benzoquinone (BQ) and hydroquinone (HQ) when dissolved in methanol (ME) has been examined through effective lifetime testing of crystalline silicon (c-Si) wafers treated with the aforementioned solutions. Changes in the availability of both photons and protons in the solutions were demonstrated to affect the level of passivation achieved. The requirement of both excess protons and ambient light exposure to maintain high effective lifetimes supports the presence of a free radical species that drives the surface passivation. Surface analysis suggests a 1:1 ratio of HQ-like bonds to methoxy bonds on the c-Si surface after treatment with a BQ/ME solution.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

DMD-based implementation of patterned optical filter arrays for compressive spectral imaging.

PubMed

Rueda, Hoover; Arguello, Henry; Arce, Gonzalo R

2015-01-01

Compressive spectral imaging (CSI) captures multispectral imagery using fewer measurements than those required by traditional Shannon-Nyquist theory-based sensing procedures. CSI systems acquire coded and dispersed random projections of the scene rather than direct measurements of the voxels. To date, the coding procedure in CSI has been realized through the use of block-unblock coded apertures (CAs), commonly implemented as chrome-on-quartz photomasks. These apertures block or permit us to pass the entire spectrum from the scene at given spatial locations, thus modulating the spatial characteristics of the scene. This paper extends the framework of CSI by replacing the traditional block-unblock photomasks by patterned optical filter arrays, referred to as colored coded apertures (CCAs). These, in turn, allow the source to be modulated not only spatially but spectrally as well, entailing more powerful coding strategies. The proposed CCAs are synthesized through linear combinations of low-pass, high-pass, and bandpass filters, paired with binary pattern ensembles realized by a digital micromirror device. The optical forward model of the proposed CSI architecture is presented along with a proof-of-concept implementation, which achieves noticeable improvements in the quality of the reconstruction.

Direct detection of sub-GeV dark matter with scintillating targets

DOE PAGES

Derenzo, Stephen; Essig, Rouven; Massari, Andrea; ...

2017-07-28

We suggest a novel experimental concept for detecting MeV-to-GeV-mass dark matter, in which the dark matter scatters off electrons in a scintillating target and produces a signal of one or a few photons. New large-area photodetectors are needed to measure the photon signal with negligible dark counts, which could be constructed from transition edge sensor (TES) or microwave kinetic inductance detector (MKID) technology. Alternatively, detecting two photons in coincidence may allow the use of conventional photodetectors like photomultiplier tubes. Here we describe why scintillators may have distinct advantages over other experiments searching for a low ionization signal from sub-GeV darkmore » matter, as there are fewer potential sources of spurious backgrounds. We discuss various target choices, but focus on calculating the expected dark matter-electron scattering rates in three scintillating crystals: sodium iodide (NaI), cesium iodide (CsI), and gallium arsenide (GaAs). Among these, GaAs has the lowest band gap (1.52 eV) compared to NaI (5.9 eV) or CsI (6.4 eV), which in principle allows it to probe dark matter masses as low as ~0.5 MeV, compared to ~1.5 MeV with NaI or CsI. We compare these scattering rates with those expected in silicon (Si) and germanium (Ge). The proposed experimental concept presents an important complementary path to existing efforts, and its potential advantages may make it the most sensitive direct-detection probe of dark matter down to MeV masses.« less

Direct detection of sub-GeV dark matter with scintillating targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Derenzo, Stephen; Essig, Rouven; Massari, Andrea

We suggest a novel experimental concept for detecting MeV-to-GeV-mass dark matter, in which the dark matter scatters off electrons in a scintillating target and produces a signal of one or a few photons. New large-area photodetectors are needed to measure the photon signal with negligible dark counts, which could be constructed from transition edge sensor (TES) or microwave kinetic inductance detector (MKID) technology. Alternatively, detecting two photons in coincidence may allow the use of conventional photodetectors like photomultiplier tubes. Here we describe why scintillators may have distinct advantages over other experiments searching for a low ionization signal from sub-GeV darkmore » matter, as there are fewer potential sources of spurious backgrounds. We discuss various target choices, but focus on calculating the expected dark matter-electron scattering rates in three scintillating crystals: sodium iodide (NaI), cesium iodide (CsI), and gallium arsenide (GaAs). Among these, GaAs has the lowest band gap (1.52 eV) compared to NaI (5.9 eV) or CsI (6.4 eV), which in principle allows it to probe dark matter masses as low as ~0.5 MeV, compared to ~1.5 MeV with NaI or CsI. We compare these scattering rates with those expected in silicon (Si) and germanium (Ge). The proposed experimental concept presents an important complementary path to existing efforts, and its potential advantages may make it the most sensitive direct-detection probe of dark matter down to MeV masses.« less

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

Laser printing of silicon nanoparticles with resonant optical electric and magnetic responses.

PubMed

Zywietz, Urs; Evlyukhin, Andrey B; Reinhardt, Carsten; Chichkov, Boris N

2014-03-04

Silicon nanoparticles with sizes of a few hundred nanometres exhibit unique optical properties due to their strong electric and magnetic dipole responses in the visible range. Here we demonstrate a novel laser printing technique for the controlled fabrication and precise deposition of silicon nanoparticles. Using femtosecond laser pulses it is possible to vary the size of Si nanoparticles and their crystallographic phase. Si nanoparticles produced by femtosecond laser printing are initially in an amorphous phase (a-Si). They can be converted into the crystalline phase (c-Si) by irradiating them with a second femtosecond laser pulse. The resonance-scattering spectrum of c-Si nanoparticles, compared with that of a-Si nanoparticles, is blue shifted and its peak intensity is about three times higher. Resonant optical responses of dielectric nanoparticles are characterized by accumulation of electromagnetic energy in the excited modes, which can be used for the realization of nanoantennas, nanolasers and metamaterials.

3D scanning characteristics of an amorphous silicon position sensitive detector array system.

PubMed

Contreras, Javier; Gomes, Luis; Filonovich, Sergej; Correia, Nuno; Fortunato, Elvira; Martins, Rodrigo; Ferreira, Isabel

2012-02-13

The 3D scanning electro-optical characteristics of a data acquisition prototype system integrating a 32 linear array of 1D amorphous silicon position sensitive detectors (PSD) were analyzed. The system was mounted on a platform for imaging 3D objects using the triangulation principle with a sheet-of-light laser. New obtained results reveal a minimum possible gap or simulated defect detection of approximately 350 μm. Furthermore, a first study of the angle for 3D scanning was also performed, allowing for a broad range of angles to be used in the process. The relationship between the scanning angle of the incident light onto the object and the image displacement distance on the sensor was determined for the first time in this system setup. Rendering of 3D object profiles was performed at a significantly higher number of frames than in the past and was possible for an incident light angle range of 15 ° to 85 °.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

PubMed

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nick P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic J.

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Investigation of the Effect of Temperature and Light Emission from Silicon Photomultiplier Detectors

NASA Astrophysics Data System (ADS)

Ruiz Castruita, Daniel; Ramos, Daniel; Hernandez, Victor; Niduaza, Rommel; Konx, Adrian; Fan, Sewan; Fatuzzo, Laura; Ritt, Stefan

2015-04-01

The silicon photomultiplier (SiPM) is an extremely sensitive light detector capable of measuring very dim light and operates as a photon-number resolving detector. Its high gain comes from operating at slightly above the breakdown voltage, which is also accompanied by a high dark count rate. At this conference poster session we describe our investigation of using SiPMs, the multipixel photon counters (MPPC) from Hamamatsu, as readout detectors for development in a cosmic ray scintillating detector array. Our research includes implementation of a novel design that automatically adjusts for the bias voltage to the MPPC detectors to compensate for changes in the ambient temperature. Furthermore, we describe our investigations for the MPPC detector characteristics at different bias voltages, temperatures and light emission properties. To measure the faint light emitted from the MPPC we use a photomultiplier tube capable of detecting single photons. Our data acquisition setup consists of a 5 Giga sample/second waveform digitizer, the DRS4, triggered to capture the MPPC detector waveforms. Analysis of the digitized waveforms, using the CERN package PAW, would be discussed and presented. US Department of Education Title V Grant PO31S090007.

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Shera, Suzanne; Shamo, Denis

1998-01-01

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Investigation of Very Fast Light Detectors: Silicon Photomultiplier and Micro PMT for a Cosmic Ray Array

NASA Astrophysics Data System (ADS)

Cervantes, Omar; Reyes, Liliana; Hooks, Tyler; Perez, Luis; Ritt, Stefan

2016-03-01

To construct a cosmic detector array using 4 scintillation detectors, we investigated 2 recent light sensor technologies from Hamamatsu, as possible readout detectors. First, we investigated several homemade versions of the multipixel photon counter (MPPC) light sensors. These detectors were either biased with internal or external high voltage power supplies. We made extensive measurements to confirm for the coincidence of the MPPC devices. Each sensor is coupled to a wavelength shifting fiber (WSF) that is embedded along a plastic scintillator sheet (30cmx60cmx1/4''). Using energetic cosmic rays, we evaluated several of these homemade detector modules placed above one another in a light proof enclosure. Next, we assembled 2 miniaturized micro photomultiplier (micro PMT), a device recently marketed by Hamamatsu. These sensors showed very fast response times. With 3 WSF embedded in scintillator sheets, we performed coincidence experiments. The detector waveforms were captured using the 5GS/sec domino ring sampler, the DRS4 and our workflow using the CERN PAW package and data analysis results would be presented. Title V Grant.

Investigations of Nuclear Structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarantites, Demetrios; Reviol, W.

The proposal addresses studies of nuclear structure at low-energies and development of instrumentation for that purpose. The structure studies deal with features of neutron-rich nuclei with unexplored shapes (football- or pear-shaped nuclei). The regions of interest are: neutron rich nuclei like 132-138Sn, or 48-54Ca, and the Zr, Mo, and Ru isotopes. The tools used can be grouped as follows: either Gammasphere or Gretina multi-gamma detector arrays and auxiliary detectors (Microball, Neutron Shell, and the newly completed Phoswich Wall).The neutron-rich nuclei are accessed by radioactive-beam binary reactions or by 252Cf spontaneous fission. The experiments with heavy radioactive beams aim at excitingmore » the beam nuclei by pick-up or transfer a neutron or a proton from a light target like 13C, 9Be, 11B or 14N .For these binary-reaction studies the Phoswich Wall detector system is essential. It is based on four multi-anode photomultiplier tubes on which CsI and thin fast-timing plastic scintillators are attached. Their signals are digitized with a high density microchip system.« less

Characterization of a novel two dimensional diode array the "magic plate" as a radiation detector for radiation therapy treatment.

PubMed

Wong, J H D; Fuduli, I; Carolan, M; Petasecca, M; Lerch, M L F; Perevertaylo, V L; Metcalfe, P; Rosenfeld, A B

2012-05-01

Intensity modulated radiation therapy (IMRT) utilizes the technology of multileaf collimators to deliver highly modulated and complex radiation treatment. Dosimetric verification of the IMRT treatment requires the verification of the delivered dose distribution. Two dimensional ion chamber or diode arrays are gaining popularity as a dosimeter of choice due to their real time feedback compared to film dosimetry. This paper describes the characterization of a novel 2D diode array, which has been named the "magic plate" (MP). It was designed to function as a 2D transmission detector as well as a planar detector for dose distribution measurements in a solid water phantom for the dosimetric verification of IMRT treatment delivery. The prototype MP is an 11 × 11 detector array based on thin (50 μm) epitaxial diode technology mounted on a 0.6 mm thick Kapton substrate using a proprietary "drop-in" technology developed by the Centre for Medical Radiation Physics, University of Wollongong. A full characterization of the detector was performed, including radiation damage study, dose per pulse effect, percent depth dose comparison with CC13 ion chamber and build up characteristics with a parallel plane ion chamber measurements, dose linearity, energy response and angular response. Postirradiated magic plate diodes showed a reproducibility of 2.1%. The MP dose per pulse response decreased at higher dose rates while at lower dose rates the MP appears to be dose rate independent. The depth dose measurement of the MP agrees with ion chamber depth dose measurements to within 0.7% while dose linearity was excellent. MP showed angular response dependency due to the anisotropy of the silicon diode with the maximum variation in angular response of 10.8% at gantry angle 180°. Angular dependence was within 3.5% for the gantry angles ± 75°. The field size dependence of the MP at isocenter agrees with ion chamber measurement to within 1.1%. In the beam perturbation study, the surface dose increased by 12.1% for a 30 × 30 cm(2) field size at the source to detector distance (SDD) of 80 cm whilst the transmission for the MP was 99%. The radiation response of the magic plate was successfully characterized. The array of epitaxial silicon based detectors with "drop-in" packaging showed properties suitable to be used as a simplified multipurpose and nonperturbing 2D radiation detector for radiation therapy dosimetric verification.

Design and optimization of a novel 3D detector: The 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Tan, Jian; Li, Zheng

2018-04-01

A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric field region existed in the conventional 3D-Trench-Electrode detector. Full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Through comparing of the simulation results of the detector, we can obtain the best design of the 3SOSED. In addition, simulation results show that, as compared to the conventional 3D detector, the proposed 3DOSED can improve not only detector charge collection efficiency but also its radiation hardness with regard to solving the trapping problem in the detector bulk. What is more, it has been shown that detector full depletion voltage is also slightly reduced, which can improve the utility aspects of the detector. When compared to the conventional 3D detector, we find that the proposed novel 3DOSED structure has better electric potential and electric field distributions, and better electrical properties such as detector full depletion voltage. In 3DOSED array, each pixel cell is isolated from each other by highly doped trenches, but also electrically and physically connected with each other through the remaining silicon bulk between broken electrodes.

TU-E-BRA-05: Reverse Geometry Imaging with MV Detector for Improved Image Resolution.

PubMed

Ganguly, A; Abel, E; Sun, M; Fahrig, R; Virshup, G; Star-Lack, J

2012-06-01

Thick pixilated scintillators can offer significant improvements in quantum efficiency over phosphor screen megavoltage (MV) detectors. However spatial resolution can be compromised due to the spreading of light across pixels within septa. Of particular interest are the lower energy x-ray photons and associated light photons that produce higher image contrast but are stopped near the scintillator entrance surface. They suffer the most scattering in the scintillator prior to detection in the photodiodes. Reversing the detector geometry, so that the incident x-ray beam passes through the photodiode array into the scintillator, allows the light to scatter less prior to detection. This also reduces the Swank noise since now higher and lower energy x-ray photons tend to produce similar electronic signals. In this work, we present simulations and measurements of detector MTF for the conventional/forward and reverse geometries to demonstrate this phenomenon. A tabletop system consisting of a Varian CX1 1MeV linear accelerator and a modified Varian Paxscan4030 with the readout electronics moved away from the incident the beam was used. A special holder was used to press a 2.5W×5.0L×2.0Hcm 3 pixellated Cesium Iodide (CsI:Tl) scintillator array on to the detector glass. The CsI array had a pitch of 0.784mm with plastic septa between pixels and the photodiode array pitch was 0.192 mm. The MTF in the forward and reverse geometries was measured using a 0.5mm thick Tantalum slanted edge. Geant4-based Monte Carlo simulations were performed for comparison. The measured and simulated MTFs matched to within 3.4(±3.7)% in the forward and 4.4(±1.5)% in reverse geometries. The reverse geometry MTF was higher than the forward geometry MTF at all spatial frequencies and doubled to .25 at 0.3lp/mm. A novel method of improving the image resolution at MV energies was demonstrated. The improvements should be more pronounced with increased scintillator thickness. Funding support provided by NIH (grant number NIH R01 CA138426). © 2012 American Association of Physicists in Medicine.

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

NASA Astrophysics Data System (ADS)

Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

2008-04-01

Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Status of the MARE experiment in Milan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferri, E.; Arnaboldi, C.; Ceruti, G.

2009-12-16

An international collaboration has grown around the project of Microcalorimeter Arrays for a Rhenium Experiment (MARE) for a direct and calorimetric measurement of the electron antineutrino mass with sub-electronvolt sensitivity.MARE is divided into two phases. The first phase (MARE-1) consists of two independent experiments using the presently available detector technology to reach a sensitivity of m{sub v}{<=}2eV/c{sup 2}. The goal of the second phase (MARE-2) is to achieve a sub-electronvolt sensitivity on the neutrino mass.The Milan MARE-1 experiment is based on arrays of silicon implanted microcalorimeters, produced by NASA/GSFC, with dielectric silver perrhenate absorbers, AgReO{sub 4}. We present here themore » status of MARE-1 in Milan which is starting data taking with 2 arrays (72 detectors). In this configuration a sensitivity of about 5 eV can be achieved in two years. We describe in details the experimental setup which is designed to host up to 8 arrays (288 detectors). With 8 arrays, two years of measurement would improve the sensitivity to about 3 eV. This talk reports on the activity of the group for the MARE project in Milan.« less

Design data brochure for CSI series V solar heating system

NASA Technical Reports Server (NTRS)

1978-01-01

Generalized information on system configuration, system sizing, and mechanical layout is presented to assist the architect or designer in preparing construction drawings and specifications for the installation of the CSI integrated solar heating systems. Efficiency in space utilization of a full length collector and the importance of proper sizing of the collector array are among the topics discussed. Details of storage and transport subsystems are provided along with drawings and specifications of all components of the CSI system.

TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, A K; Koniczek, M; Antonuk, L E

Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailedmore » circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed circuit simulations and prototyping is expected. Partially supported by NIH grant R01-EB000558. This work was partially supported by NIH grant no. R01-EB000558.« less

The NSLS 100 element solid state array detector

PubMed Central

Furenlid, L.R.; Kraner, H.W.; Rogers, L.C.; Cramer, S.P.; Stephani, D.; Beuttenmuller, R.H.; Beren, J.

2015-01-01

X-ray absorption studies of dilute samples require fluorescence detection techniques. Since signal-to-noise ratios are governed by the ratio of fluorescent to scattered photons counted by a detector, solid state detectors which can discriminate between fluorescence and scattered photons have become the instruments of choice for trace element measurements. Commercially available 13 element Ge array detectors permitting total count rates < 500000 counts per second are now in routine use. Since X-ray absorption beamlines at high brightness synchrotron sources can already illuminate most dilute samples with enough flux to saturate the current generation of solid state detectors, the development of next-generation instruments with significantly higher total count rates is essential. We present the design and current status of the 100 element Si array detector being developed in a collaboration between the NSLS and the Instrumentation Division at Brookhaven National Laboratory. The detecting array consists of a 10×10 matrix of 4 mm×4 mm elements laid out on a single piece of ultrahigh purity silicon mounted at the front end of a liquid nitrogen dewar assembly. A matrix of charge sensitive integrating preamplifiers feed signals to an array of shaping amplifiers, single channel analyzers, and scalers. An electronic switch, delay amplifier, linear gate, digital scope, peak sensing A/D converter, and histogramining memory module provide for complete diagnostics and channel calibration. The entire instrument is controlled by a LabView 2 application on a MacII ci; the software also provides full control over beamline hardware and performs the data collection. PMID:26722135

Conceptual design and optimization of a plastic scintillator array for 2D tomography using a compact D-D fast neutron generator.

PubMed

Adams, Robert; Zboray, Robert; Cortesi, Marco; Prasser, Horst-Michael

2014-04-01

A conceptual design optimization of a fast neutron tomography system was performed. The system is based on a compact deuterium-deuterium fast neutron generator and an arc-shaped array of individual neutron detectors. The array functions as a position sensitive one-dimensional detector allowing tomographic reconstruction of a two-dimensional cross section of an object up to 10 cm across. Each individual detector is to be optically isolated and consists of a plastic scintillator and a Silicon Photomultiplier for measuring light produced by recoil protons. A deterministic geometry-based model and a series of Monte Carlo simulations were used to optimize the design geometry parameters affecting the reconstructed image resolution. From this, it is expected that with an array of 100 detectors a reconstructed image resolution of ~1.5mm can be obtained. Other simulations were performed in order to optimize the scintillator depth (length along the neutron path) such that the best ratio of direct to scattered neutron counts is achieved. This resulted in a depth of 6-8 cm and an expected detection efficiency of 33-37%. Based on current operational capabilities of a prototype neutron generator being developed at the Paul Scherrer Institute, planned implementation of this detector array design should allow reconstructed tomograms to be obtained with exposure times on the order of a few hours. Copyright © 2014 Elsevier Ltd. All rights reserved.

High resolution CsI(Tl)/Si-PIN detector development for breast imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.; Tull, C.R.

High resolution multi-element (8x8) imaging arrays with collimators, size matched to discrete CsI(Tl) scintillator arrays and Si-PIN photodetector arrays (PDA`s) were developed as prototypes for larger arrays for breast imaging. Photodetector pixels were each 1.5 {times} 1.5 mm{sup 2} with 0.25 mm gaps. A 16-element quadrant of the detector was evaluated with a segmented CsI(Tl) scintillator array coupled to the silicon array. The scintillator thickness of 6 mm corresponds to >85% total gamma efficiency at 140 keV. Pixel energy resolution of <8% FWHM was obtained for Tc-99m. Electronic noise was 41 e{sup {minus}} RMS corresponding to a 3% FWHM contributionmore » to the 140 keV photopeak. Detection efficiency uniformity measured with a Tc-99m flood source was 4.3% for an {approximately}10% energy photopeak window. Spatial resolution was 1.53 mm FWHM and pitch was 1.75 mm as measured from the Co-57 (122 keV) line spread function. Signal to background was 34 and contrast was 0.94. The energy resolution and spatial characteristics of the new imaging detector exceed those of other scintillator based imaging detectors. A camera based on this technology will allow: (1) Improved Compton scatter rejection; (2) Detector positioning in close proximity to the breast to increase signal to noise; (3) Improved spatial resolution; and (4) Improved efficiency compared to high resolution collimated gamma cameras for the anticipated compressed breast geometries.« less

Enabling Large Focal Plane Arrays through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Costen, Nick; Benford, Dominic J.

2012-01-01

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

2018-01-01

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

Focal-plane detector system for the KATRIN experiment

NASA Astrophysics Data System (ADS)

Amsbaugh, J. F.; Barrett, J.; Beglarian, A.; Bergmann, T.; Bichsel, H.; Bodine, L. I.; Bonn, J.; Boyd, N. M.; Burritt, T. H.; Chaoui, Z.; Chilingaryan, S.; Corona, T. J.; Doe, P. J.; Dunmore, J. A.; Enomoto, S.; Formaggio, J. A.; Fränkle, F. M.; Furse, D.; Gemmeke, H.; Glück, F.; Harms, F.; Harper, G. C.; Hartmann, J.; Howe, M. A.; Kaboth, A.; Kelsey, J.; Knauer, M.; Kopmann, A.; Leber, M. L.; Martin, E. L.; Middleman, K. J.; Myers, A. W.; Oblath, N. S.; Parno, D. S.; Peterson, D. A.; Petzold, L.; Phillips, D. G.; Renschler, P.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Tcherniakhovski, D.; Thümmler, T.; Van Wechel, T. D.; VanDevender, B. A.; Vöcking, S.; Wall, B. L.; Wierman, K. L.; Wilkerson, J. F.; Wüstling, S.

2015-04-01

The focal-plane detector system for the KArlsruhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high-vacuum system, a high-vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system. It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

Images of the future - Two decades in astronomy

NASA Technical Reports Server (NTRS)

Weistrop, D.

1982-01-01

Future instruments for the 100-10,000 A UV-wavelength region will require detectors with greater quantum efficiency, smaller picture elements, a greater wavelength range, and greater active area than those currently available. After assessing the development status and performance characteristics of vidicons, image tubes, electronographic cameras, digicons, silicon arrays and microchannel plate intensifiers presently employed by astronomical spacecraft, attention is given to such next-generation detectors as the Mosaicked Optical Self-scanned Array Imaging Camera, which consists of a photocathode deposited on the input side of a microchannel plate intensifier. The problems posed by the signal processing and data analysis requirements of the devices foreseen for the 21st century are noted.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector to be used for time-resolved X-ray scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and a depletion depth of 10 μm. The multichannel scaler counted X-ray pulses over continuous 2046 time bins for every 0.5 ns and recorded a time spectrum at each pixel with a time resolution of 0.5 ns (FWHM) for 8.0 keV X-rays. Using the detector system, we were able to observe X-ray peaks clearly separated with 2 nsmore » interval in the multibunch-mode operation of the Photon Factory ring. The small-angle X-ray scattering for polyvinylidene fluoride film was also observed with the detector.« less

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

NASA Astrophysics Data System (ADS)

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

2018-06-01

We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

A gas ionisation detector in the axial (Bragg) geometry used for the time-of-flight elastic recoil detection analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siketić, Zdravko; Skukan, Natko; Bogdanović Radović, Iva

2015-08-15

In this paper, time-of-flight elastic recoil detection analysis spectrometer with a newly constructed gas ionization detector for energy detection is presented. The detector is designed in the axial (Bragg) geometry with a 3 × 3 array of 50 nm thick Si{sub 3}N{sub 4} membranes as an entrance window. 40 mbar isobutane gas was sufficient to stop a 30 MeV primary iodine beam as well as all recoils in the detector volume. Spectrometer and detector performances were determined showing significant improvement in the mass and energy resolution, respectively, comparing to the spectrometer with a standard silicon particle detector for an energymore » measurement.« less

Optimization of a large-area detector-block based on SiPM and pixelated LYSO crystal arrays.

PubMed

Calva-Coraza, E; Alva-Sánchez, H; Murrieta-Rodríguez, T; Martínez-Dávalos, A; Rodríguez-Villafuerte, M

2017-10-01

We present the performance evaluation of a large-area detector module based on the ArrayC-60035-64P, an 8×8 array of tileable, 7.2mm pitch, silicon photomultipliers (SiPM) by SensL, covering a total area of 57.4mm×57.4mm. We characterized the ArrayC-60035-64P, operating at room temperature, using LYSO pixelated crystal arrays of different pitch sizes (1.075, 1.430, 1.683, 2.080 and 2.280mm) to determine the resolvable crystal size. After an optimization process, a 7mm thick coupling light guide was used for all crystal pitches. To identify the interaction position a 16-channel (8 columns, 8 rows) symmetric charge division (SCD) readout board together with a center-of-gravity algorithm was used. Based on this, we assembled the detector modules using a 40×40 LYSO, 1.43mm pitch array, covering the total detector area. Calibration was performed using a 137 Cs source resulting in excellent crystal maps with minor geometric distortion, a mean 4.1 peak-to-valley ratio and 9.6% mean energy resolution for 662keV photons in the central region. The resolvability index was calculated in the x and y directions with values under 0.42 in all cases. We show that these large area SiPM arrays, combined with a 16-channel SCD readout board, can offer high spatial resolution, without processing a big number of signals, attaining excellent energy resolution and detector uniformity. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

CCAM: A novel millimeter-wave instrument using a close-packed TES bolometer array

NASA Astrophysics Data System (ADS)

Lau, Judy M.

This thesis describes CCAM, an instrument designed to map the Cosmic Microwave Background (CMB), and also presents some of the initial measurements made with CCAM on the Atacama Cosmology Telescope (ACT). CCAM uses a CCD-like camera of millimeter-wave TES bolometers. It employs new detector technology, read-out electronics, cold re-imaging optics, and cryogenics to obtain high sensitivity CMB anisotropy measurements. The free-standing 8×32 close-packed array of pop- up TES detectors is the first of its kind to observe the sky at 145 GHz. We present the design of the receiver including the antireflection coated silicon lens re-imaging system, construction and optimization of the pulse tube/ sorption refrigerator cryogenic system, as well as the technology developed to integrate eight 1×32 TES columns and accompanying read-out electronics in to an array of 256 millimeter-wave detectors into a focal plane area of 3.5 cm 2. The performance of the detectors and optics prior to deployment at the ACT site in Chile are reported as well as preliminary performance results of the instrument when optically paired with the ACT telescope in the summer of 2007. Here, we also report on the feasibility of the TES detector array to measure polarization when coupled to a rotating birefringent sapphire half wave plate and wire-grid polarizer.

Controllable nanoscale inverted pyramids for highly efficient quasi-omnidirectional crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Haiyuan, Xu; Sihua, Zhong; Yufeng, Zhuang; Wenzhong, Shen

2018-01-01

Nanoscale inverted pyramid structures (NIPs) have always been regarded as one of the paramount light management schemes to achieve extraordinary performance in various devices, especially in solar cells, due to their outstanding antireflection ability with relative lower surface enhancement ratio. However, current approaches to fabricating NIPs are complicated and not cost-effective for massive cell production in the photovoltaic industry. Here, controllable NIPs are fabricated on crystalline silicon (c-Si) wafers by Ag-catalyzed chemical etching and alkaline modification, which is a preferable all-solution-processed method. Through applying the NIPs to c-Si solar cells and optimizing the cell design, we have successfully achieved highly efficient textured solar cells with NIPs of a champion efficiency of 20.5%. Significantly, these NIPs are further demonstrated to possess a quasi-omnidirectional property over broad sunlight incident angles of approximately 0°-60°. Moreover, NIPs are theoretically revealed to offer light trapping advantages for ultrathin c-Si solar cells. Hence, NIPs formed by a controllable method exhibit great potential to be used in the future photovoltaic industry as surface texture.

Development of the new trigger for VANDLE neutron detector

NASA Astrophysics Data System (ADS)

Hasse, Adam; Taylor, Steven; Daugherty, Hadyn; Grzywacz, Robert

2014-09-01

Beta-delayed neutron emission (βn) is the dominant decay channel for the majority of very neutron-rich nuclei. In order to study these decays a new detector system called the Versatile Array of Neutron Detectors at Low Energy (VANDLE) was constructed. A critical part of this neutron time of flight detector is a trigger unit. This trigger is sensitive to electron from beta decay down to very low energies, insensitive to gamma rays and have a good timing performance, better than 1 ns. In order to satisfy these condition, we have developed a new system, which utilizes plastic scintillator but uses recently developed light readout technique, based on the so called Silicon Photomultiplier, manufactured by Sensl. New system has been developed and performance tested using digital data acquisition system at the University of Tennessee and will be utilized in future experiments involving VANDLE. Beta-delayed neutron emission (βn) is the dominant decay channel for the majority of very neutron-rich nuclei. In order to study these decays a new detector system called the Versatile Array of Neutron Detectors at Low Energy (VANDLE) was constructed. A critical part of this neutron time of flight detector is a trigger unit. This trigger is sensitive to electron from beta decay down to very low energies, insensitive to gamma rays and have a good timing performance, better than 1 ns. In order to satisfy these condition, we have developed a new system, which utilizes plastic scintillator but uses recently developed light readout technique, based on the so called Silicon Photomultiplier, manufactured by Sensl. New system has been developed and performance tested using digital data acquisition system at the University of Tennessee and will be utilized in future experiments involving VANDLE. Department of Physics and Astronomy, University of Tennessee, Knoxville, USA.

Preparation of reflective CsI photocathodes with reproducible high quantum efficiency

NASA Astrophysics Data System (ADS)

Maier-Komor, P.; Bauer, B. B.; Friese, J.; Gernhäuser, R.; Kienle, P.; Körner, H. J.; Montermann, G.; Zeitelhack, K.

1995-02-01

CsI as a solid UV-photocathode material has many promising applications in fast gaseous photon detectors. They are proposed in large area Ring Imaging CHerenkov (RICH) devices in forthcoming experiments at various high-energy particle accelerators. A high photon-to-electron conversion efficiency is a basic requirement for the successful operation of these devices. High reproducible quantum efficiencies could be achieved with CsI layers prepared by electron beam evaporation from a water-cooled copper crucible. CsI films were deposited in the thickness range of 30 to 500 μg/cm 2. Absorption coefficients and quantum efficiencies were measured in the wavelength region of 150 nm to 250 nm. The influence of various evaporation parameters on the quantum efficiency were investigated.

Improved event positioning in a gamma ray detector using an iterative position-weighted centre-of-gravity algorithm.

PubMed

Liu, Chen-Yi; Goertzen, Andrew L

2013-07-21

An iterative position-weighted centre-of-gravity algorithm was developed and tested for positioning events in a silicon photomultiplier (SiPM)-based scintillation detector for positron emission tomography. The algorithm used a Gaussian-based weighting function centred at the current estimate of the event location. The algorithm was applied to the signals from a 4 × 4 array of SiPM detectors that used individual channel readout and a LYSO:Ce scintillator array. Three scintillator array configurations were tested: single layer with 3.17 mm crystal pitch, matched to the SiPM size; single layer with 1.5 mm crystal pitch; and dual layer with 1.67 mm crystal pitch and a ½ crystal offset in the X and Y directions between the two layers. The flood histograms generated by this algorithm were shown to be superior to those generated by the standard centre of gravity. The width of the Gaussian weighting function of the algorithm was optimized for different scintillator array setups. The optimal width of the Gaussian curve was found to depend on the amount of light spread. The algorithm required less than 20 iterations to calculate the position of an event. The rapid convergence of this algorithm will readily allow for implementation on a front-end detector processing field programmable gate array for use in improved real-time event positioning and identification.

Sub-200 ps CRT in monolithic scintillator PET detectors using digital SiPM arrays and maximum likelihood interaction time estimation.

PubMed

van Dam, Herman T; Borghi, Giacomo; Seifert, Stefan; Schaart, Dennis R

2013-05-21

Digital silicon photomultiplier (dSiPM) arrays have favorable characteristics for application in monolithic scintillator detectors for time-of-flight positron emission tomography (PET). To fully exploit these benefits, a maximum likelihood interaction time estimation (MLITE) method was developed to derive the time of interaction from the multiple time stamps obtained per scintillation event. MLITE was compared to several deterministic methods. Timing measurements were performed with monolithic scintillator detectors based on novel dSiPM arrays and LSO:Ce,0.2%Ca crystals of 16 × 16 × 10 mm(3), 16 × 16 × 20 mm(3), 24 × 24 × 10 mm(3), and 24 × 24 × 20 mm(3). The best coincidence resolving times (CRTs) for pairs of identical detectors were obtained with MLITE and measured 157 ps, 185 ps, 161 ps, and 184 ps full-width-at-half-maximum (FWHM), respectively. For comparison, a small reference detector, consisting of a 3 × 3 × 5 mm(3) LSO:Ce,0.2%Ca crystal coupled to a single pixel of a dSiPM array, was measured to have a CRT as low as 120 ps FWHM. The results of this work indicate that the influence of the optical transport of the scintillation photons on the timing performance of monolithic scintillator detectors can at least partially be corrected for by utilizing the information contained in the spatio-temporal distribution of the collection of time stamps registered per scintillation event.

Sub-200 ps CRT in monolithic scintillator PET detectors using digital SiPM arrays and maximum likelihood interaction time estimation

NASA Astrophysics Data System (ADS)

van Dam, Herman T.; Borghi, Giacomo; Seifert, Stefan; Schaart, Dennis R.

2013-05-01

Digital silicon photomultiplier (dSiPM) arrays have favorable characteristics for application in monolithic scintillator detectors for time-of-flight positron emission tomography (PET). To fully exploit these benefits, a maximum likelihood interaction time estimation (MLITE) method was developed to derive the time of interaction from the multiple time stamps obtained per scintillation event. MLITE was compared to several deterministic methods. Timing measurements were performed with monolithic scintillator detectors based on novel dSiPM arrays and LSO:Ce,0.2%Ca crystals of 16 × 16 × 10 mm3, 16 × 16 × 20 mm3, 24 × 24 × 10 mm3, and 24 × 24 × 20 mm3. The best coincidence resolving times (CRTs) for pairs of identical detectors were obtained with MLITE and measured 157 ps, 185 ps, 161 ps, and 184 ps full-width-at-half-maximum (FWHM), respectively. For comparison, a small reference detector, consisting of a 3 × 3 × 5 mm3 LSO:Ce,0.2%Ca crystal coupled to a single pixel of a dSiPM array, was measured to have a CRT as low as 120 ps FWHM. The results of this work indicate that the influence of the optical transport of the scintillation photons on the timing performance of monolithic scintillator detectors can at least partially be corrected for by utilizing the information contained in the spatio-temporal distribution of the collection of time stamps registered per scintillation event.

Cryogenic Design of the Setup for MARE-1 in Milan

NASA Astrophysics Data System (ADS)

Schaeffer, D.; Arnaboldi, C.; Ceruti, G.; Ferri, E.; Kilbourne, C.; Kraft-Bermuth, S.; Margesin, B.; McCammon, D.; Monfardini, A.; Nucciotti, A.; Pessina, G.; Previtali, E.; Sisti, M.

2008-05-01

A large worldwide collaboration is growing around the project of Micro-calorimeter Arrays for a Rhenium Experiment (MARE) for a direct calorimetric measurement of the neutrino mass. To validate the use of cryogenic detectors by checking the presence of unexpected systematic errors, two first experiments are planned using the available techniques composed of arrays of 300 detectors to measure 1010 events in a reasonable time of 3 years (step MARE-1) to reach a sensitivity on the neutrino mass of ˜2 eV/c2. Our experiment in Milan is based on compensated doped silicon implanted thermistor arrays made in NASA/GSFC and on AgReO4 crystals. We present here the design of the cryogenic system that integrates all the requirements for such experiment (electronics for high impedances, low parasitic capacitances, low micro-phonic noise).

Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-03-01

Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

Comparison of SensL and Hamamatsu 4×4 channel SiPM arrays in gamma spectrometry with scintillators

NASA Astrophysics Data System (ADS)

Grodzicka-Kobylka, M.; Szczesniak, T.; Moszyński, M.

2017-06-01

The market of Silicon Photomultipliers (SiPMs) consists of many manufacturers that produce their detectors in different technology. Hamamatsu (Japan) and SensL (Ireland) seems to be the most popular companies that produce large SiPM arrays. The aim of this work is characterization and comparison of 4×4 channel SiPM arrays produced by these two producers. Both of the tested SiPMs are made in through-silicon via (TSV) technology, consist of 16, 3×3 mm avalanche photodiode (APD) cells and have fill factor slightly above 60%. The largest difference is a single APD cell size and hence total number of APD cells (55,424 for Hamamatsu, 76,640 for SensL). In the case of SensL SiPM, its spectral response characteristics is shifted slightly toward shorter wavelengths with maximum at 420 nm (450 nm for Hamamatsu). The presented measurements cover selection of the SiPM optimum operating voltage (in respect to energy resolution), verification of the excess noise factor and check of the linearity characteristics. Moreover, the gamma spectrometry with LSO, BGO and CsI:Tl scintillators together with pulse characteristics for these crystals (rise time and fall time) is reported, as well as temperature dependence. The presented measurements show better performance of the SensL array comparing to the Hamamatsu detector.

Optimizing the Timing Resolution for the NEXT Array

NASA Astrophysics Data System (ADS)

Engelhardt, A.; Shadrick, S.; Rajabali, M.; Schmitt, K.; Grzywacz, R.

2016-09-01

In nuclear physics studies there are very few detectors capable of measuring neutron energies in the 0.1-10 MeV energy range with a reasonable resolution. The VANDLE array is the premier detector array for these measurements, yet VANDLE is limited by the its thickness (2.9 cm minimum).The Neutron dEtector with Tracking (NEXT) array would be capable of surpassing the limitations caused by the large size of VANDLE bars. A proposed configuration of each neutron detector consists of ten 3-mm thick plastic scintillators with two or more silicon photomultipliers (SiPMs) attached at each end. To achieve the desired energy resolution for neutron energy measurements through time of flight, the timing resolution between these SiPMs needs to be below 200 ps. A SiPM was placed on each end of a plastic scintillator inside a light-tight electrical box along with a 137Cs source. An analog circuit was designed in order to measure the timing difference between the two SiPMs. Different configurations of SiPM sizes, scintillator sizes, and wrappings were tested in order to determine the configuration that yields the best timing resolution. Details of the testing procedures and results will be presented. Research Supported by the National Nuclear Security Administration.

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

Focal-plane detector system for the KATRIN experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amsbaugh, J. F.; Barrett, J.; Beglarian, A.

Here, the local plane detector system for the KArlsiuhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high vacuum system, a high vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system, It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

Focal-plane detector system for the KATRIN experiment

DOE PAGES

Amsbaugh, J. F.; Barrett, J.; Beglarian, A.; ...

2015-01-09

Here, the local plane detector system for the KArlsiuhe TRItium Neutrino (KATRIN) experiment consists of a multi-pixel silicon p-i-n-diode array, custom readout electronics, two superconducting solenoid magnets, an ultra high vacuum system, a high vacuum system, calibration and monitoring devices, a scintillating veto, and a custom data-acquisition system, It is designed to detect the low-energy electrons selected by the KATRIN main spectrometer. We describe the system and summarize its performance after its final installation.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.

2016-01-01

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Zirconium oxide surface passivation of crystalline silicon

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Hettick, Mark; Xu, Zhaoran; Yan, Di; Peng, Jun; Javey, Ali; Cuevas, Andres

2018-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrOx). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiOx interfacial layer underneath an 18 nm ZrOx layer, consistent with ellipsometry measurements (˜20 nm). Capacitance-voltage measurements show that the annealed ZrOx film features a low interface defect density of 1.0 × 1011 cm-2 eV-1 and a low negative film charge density of -6 × 1010 cm-2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrOx is consistent with the requirements of high efficiency silicon solar cells.

Mechanically and chemically robust sandwich-structured C@Si@C nanotube array Li-ion battery anodes.

PubMed

Liu, Jinyun; Li, Nan; Goodman, Matthew D; Zhang, Hui Gang; Epstein, Eric S; Huang, Bo; Pan, Zeng; Kim, Jinwoo; Choi, Jun Hee; Huang, Xingjiu; Liu, Jinhuai; Hsia, K Jimmy; Dillon, Shen J; Braun, Paul V

2015-02-24

Stability and high energy densities are essential qualities for emerging battery electrodes. Because of its high specific capacity, silicon has been considered a promising anode candidate. However, the several-fold volume changes during lithiation and delithiation leads to fractures and continuous formation of an unstable solid-electrolyte interphase (SEI) layer, resulting in rapid capacity decay. Here, we present a carbon-silicon-carbon (C@Si@C) nanotube sandwich structure that addresses the mechanical and chemical stability issues commonly associated with Si anodes. The C@Si@C nanotube array exhibits a capacity of ∼2200 mAh g(-1) (∼750 mAh cm(-3)), which significantly exceeds that of a commercial graphite anode, and a nearly constant Coulombic efficiency of ∼98% over 60 cycles. In addition, the C@Si@C nanotube array gives much better capacity and structure stability compared to the Si nanotubes without carbon coatings, the ZnO@C@Si@C nanorods, a Si thin film on Ni foam, and C@Si and Si@C nanotubes. In situ SEM during cycling shows that the tubes expand both inward and outward upon lithiation, as well as elongate, and then revert back to their initial size and shape after delithiation, suggesting stability during volume changes. The mechanical modeling indicates the overall plastic strain in a nanotube is much less than in a nanorod, which may significantly reduce low-cycle fatigue. The sandwich-structured nanotube design is quite general, and may serve as a guide for many emerging anode and cathode systems.

10 CFR 71.59 - Standards for arrays of fissile material packages.

Code of Federal Regulations, 2012 CFR

2012-01-01

... the stack by water: (1) Five times “N” undamaged packages with nothing between the packages would be.... The value of the CSI may be zero provided that an unlimited number of packages are subcritical, such...) of this section. Any CSI greater than zero must be rounded up to the first decimal place. (c) For a...

10 CFR 71.59 - Standards for arrays of fissile material packages.

Code of Federal Regulations, 2013 CFR

2013-01-01

... the stack by water: (1) Five times “N” undamaged packages with nothing between the packages would be.... The value of the CSI may be zero provided that an unlimited number of packages are subcritical, such...) of this section. Any CSI greater than zero must be rounded up to the first decimal place. (c) For a...

10 CFR 71.59 - Standards for arrays of fissile material packages.

Code of Federal Regulations, 2014 CFR

2014-01-01

... the stack by water: (1) Five times “N” undamaged packages with nothing between the packages would be.... The value of the CSI may be zero provided that an unlimited number of packages are subcritical, such...) of this section. Any CSI greater than zero must be rounded up to the first decimal place. (c) For a...

10 CFR 71.59 - Standards for arrays of fissile material packages.

Code of Federal Regulations, 2011 CFR

2011-01-01

... fissile material package shall derive a number “N” based on all the following conditions being satisfied.... The value of the CSI may be zero provided that an unlimited number of packages are subcritical, such...) of this section. Any CSI greater than zero must be rounded up to the first decimal place. (c) For a...

10 CFR 71.59 - Standards for arrays of fissile material packages.

Code of Federal Regulations, 2010 CFR

2010-01-01

... fissile material package shall derive a number “N” based on all the following conditions being satisfied.... The value of the CSI may be zero provided that an unlimited number of packages are subcritical, such...) of this section. Any CSI greater than zero must be rounded up to the first decimal place. (c) For a...

The NASA - Arc 10/20 micron camera

NASA Technical Reports Server (NTRS)

Roellig, T. L.; Cooper, R.; Deutsch, L. K.; Mccreight, C.; Mckelvey, M.; Pendleton, Y. J.; Witteborn, F. C.; Yuen, L.; Mcmahon, T.; Werner, M. W.

1994-01-01

A new infrared camera (AIR Camera) has been developed at NASA - Ames Research Center for observations from ground-based telescopes. The heart of the camera is a Hughes 58 x 62 pixel Arsenic-doped Silicon detector array that has the spectral sensitivity range to allow observations in both the 10 and 20 micron atmospheric windows.

Development of a unit cell for a Ge:Ga detector array

NASA Technical Reports Server (NTRS)

1988-01-01

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Horn-coupled, commercially-fabricated aluminum lumped-element kinetic inductance detectors for millimeter wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarrick, H., E-mail: hlm2124@columbia.edu; Flanigan, D.; Jones, G.

We discuss the design, fabrication, and testing of prototype horn-coupled, lumped-element kinetic inductance detectors (LEKIDs) designed for cosmic microwave background studies. The LEKIDs are made from a thin aluminum film deposited on a silicon wafer and patterned using standard photolithographic techniques at STAR Cryoelectronics, a commercial device foundry. We fabricated 20-element arrays, optimized for a spectral band centered on 150 GHz, to test the sensitivity and yield of the devices as well as the multiplexing scheme. We characterized the detectors in two configurations. First, the detectors were tested in a dark environment with the horn apertures covered, and second, themore » horn apertures were pointed towards a beam-filling cryogenic blackbody load. These tests show that the multiplexing scheme is robust and scalable, the yield across multiple LEKID arrays is 91%, and the measured noise-equivalent temperatures for a 4 K optical load are in the range 26±6 μK√(s)« less

A fast and complete GEANT4 and ROOT Object-Oriented Toolkit: GROOT

NASA Astrophysics Data System (ADS)

Lattuada, D.; Balabanski, D. L.; Chesnevskaya, S.; Costa, M.; Crucillà, V.; Guardo, G. L.; La Cognata, M.; Matei, C.; Pizzone, R. G.; Romano, S.; Spitaleri, C.; Tumino, A.; Xu, Y.

2018-01-01

Present and future gamma-beam facilities represent a great opportunity to validate and evaluate the cross-sections of many photonuclear reactions at near-threshold energies. Monte Carlo (MC) simulations are very important to evaluate the reaction rates and to maximize the detection efficiency but, unfortunately, they can be very cputime-consuming and in some cases very hard to reproduce, especially when exploring near-threshold cross-section. We developed a software that makes use of the validated tracking GEANT4 libraries and the n-body event generator of ROOT in order to provide a fast, realiable and complete MC tool to be used for nuclear physics experiments. This tool is indeed intended to be used for photonuclear reactions at γ-beam facilities with ELISSA (ELI Silicon Strip Array), a new detector array under development at the Extreme Light Infrastructure - Nuclear Physics (ELI-NP). We discuss the results of MC simulations performed to evaluate the effects of the electromagnetic induced background, of the straggling due to the target thickness and of the resolution of the silicon detectors.

Electrical interface characteristics (I-V), optical time of flight measurements, and the x-ray (20 keV) signal response of amorphous-selenium/crystalline-silicon heterojunction structures

NASA Astrophysics Data System (ADS)

Hunter, David M.; Ho, Chu An; Belev, George; De Crescenzo, Giovanni; Kasap, Safa O.; Yaffe, Martin J.

2011-03-01

We have investigated the dark current, optical TOF (time of flight) properties, and the X-ray response of amorphousselenium (a-Se)/crystalline-silicon (c-Si) heterostructures for application in digital radiography. The structures have been studied to determine if an x-ray generated electron signal, created in an a-Se layer, could be directly transferred to a c-Si based readout device such as a back-thinned CCD (charge coupled device). A simple first order band-theory of the structure indicates that x-ray generated electrons should transfer from the a-Se to the c-Si, while hole transfer from p-doped c-Si to the a-Se should be blocked, permitting a low dark signal as required. The structures we have tested have a thin metal bias electrode on the x-ray facing side of the a-Se which is deposited on the c-Si substrate. The heterostructures made with pure a-Se deposited on epitaxial p-doped (5×10 14 cm-3) c-Si exhibited very low dark current of 15 pA cm-2 at a negative bias field of 10 V μm-1 applied to the a-Se. The optical TOF (time of flight) measurements show that the applied bias drops almost entirely across the a-Se layer and that the a-Se hole and electron mobilities are within the range of commonly accepted values. The x-ray signal measurements demonstrate the structure has the expected x-ray quantum efficiency. We have made a back-thinned CCD coated with a-Se and although most areas of the device show a poor x-ray response, it does contain small regions which do work properly with the expected x-ray sensitivity. Improved understanding of the a-Se/c-Si interface and preparation methods should lead to properly functioning devices.

High spectral resolution studies of gamma ray bursts on new missions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Desai, U. D.; Acuna, M. H.; Cline, T. L.

1996-08-01

Two new missions will be launched in 1996 and 1997, each carrying X-ray and gamma ray detectors capable of high spectral resolution at room temperature. The Argentine Satelite de Aplicaciones Cientificas (SAC-B) and the Small Spacecraft Technology Initiative (SSTI) Clark missions will each carry several arrays of X-ray detectors primarily intended for the study of solar flares and gamma-ray bursts. Arrays of small (1 cm{sup 2}) cadmium zinc telluride (CZT) units will provide x-ray measurements in the 10 to 80 keV range with an energy resolution of {approx_equal}6 keV. Arrays of both silicon avalanche photodiodes (APD) and P-intrinsic-N (PIN) photodiodesmore » (for the SAC-B mission only) will provide energy coverage from 2-25 keV with {approx_equal}1 keV resolution. For SAC-B, higher energy spectral data covering the 30-300 keV energy range will be provided by CsI(Tl) scintillators coupled to silicon APDs, resulting in similar resolution but greater simplicity relative to conventional CsI/PMT systems. Because of problems with the Pegasus launch vehicle, the launch of SAC-B has been delayed until 1997. The launch of the SSTI Clark mission is scheduled for June 1996.« less

Superconducting Microwave Resonator Arrays for Submillimeter/Far-Infrared Imaging

NASA Astrophysics Data System (ADS)

Noroozian, Omid

Superconducting microwave resonators have the potential to revolutionize submillimeter and far-infrared astronomy, and with it our understanding of the universe. The field of low-temperature detector technology has reached a point where extremely sensitive devices like transition-edge sensors are now capable of detecting radiation limited by the background noise of the universe. However, the size of these detector arrays are limited to only a few thousand pixels. This is because of the cost and complexity of fabricating large-scale arrays of these detectors that can reach up to 10 lithographic levels on chip, and the complicated SQUID-based multiplexing circuitry and wiring for readout of each detector. In order to make substantial progress, next-generation ground-based telescopes such as CCAT or future space telescopes require focal planes with large-scale detector arrays of 104--10 6 pixels. Arrays using microwave kinetic inductance detectors (MKID) are a potential solution. These arrays can be easily made with a single layer of superconducting metal film deposited on a silicon substrate and pattered using conventional optical lithography. Furthermore, MKIDs are inherently multiplexable in the frequency domain, allowing ˜ 10 3 detectors to be read out using a single coaxial transmission line and cryogenic amplifier, drastically reducing cost and complexity. An MKID uses the change in the microwave surface impedance of a superconducting thin-film microresonator to detect photons. Absorption of photons in the superconductor breaks Cooper pairs into quasiparticles, changing the complex surface impedance, which results in a perturbation of resonator frequency and quality factor. For excitation and readout, the resonator is weakly coupled to a transmission line. The complex amplitude of a microwave probe signal tuned on-resonance and transmitted on the feedline past the resonator is perturbed as photons are absorbed in the superconductor. The perturbation can be detected using a cryogenic amplifier and subsequent homodyne mixing at room temperature. In an array of MKIDs, all the resonators are coupled to a shared feedline and are tuned to slightly different frequencies. They can be read out simultaneously using a comb of frequencies generated and measured using digital techniques. This thesis documents an effort to demonstrate the basic operation of ˜ 256 pixel arrays of lumped-element MKIDs made from superconducting TiN x on silicon. The resonators are designed and simulated for optimum operation. Various properties of the resonators and arrays are measured and compared to theoretical expectations. A particularly exciting observation is the extremely high quality factors (˜ 3 x 107) of our TiNx resonators which is essential for ultra-high sensitivity. The arrays are tightly packed both in space and in frequency which is desirable for larger full-size arrays. However, this can cause a serious problem in terms of microwave crosstalk between neighboring pixels. We show that by properly designing the resonator geometry, crosstalk can be eliminated; this is supported by our measurement results. We also tackle the problem of excess frequency noise in MKIDs. Intrinsic noise in the form of an excess resonance frequency jitter exists in planar superconducting resonators that are made on dielectric substrates. We conclusively show that this noise is due to fluctuations of the resonator capacitance. In turn, the capacitance fluctuations are thought to be driven by two-level system (TLS) fluctuators in a thin layer on the surface of the device. With a modified resonator design we demonstrate with measurements that this noise can be substantially reduced. An optimized version of this resonator was designed for the multiwavelength submillimeter kinetic inductance camera (MUSIC) instrument for the Caltech Submillimeter Observatory.

Development of depth encoding small animal PET detectors using dual-ended readout of pixelated scintillator arrays with SiPMs.

PubMed

Kuang, Zhonghua; Sang, Ziru; Wang, Xiaohui; Fu, Xin; Ren, Ning; Zhang, Xianming; Zheng, Yunfei; Yang, Qian; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

2018-02-01

The performance of current small animal PET scanners is mainly limited by the detector performance and depth encoding detectors are required to develop PET scanner to simultaneously achieve high spatial resolution and high sensitivity. Among all depth encoding PET detector approaches, dual-ended readout detector has the advantage to achieve the highest depth of interaction (DOI) resolution and spatial resolution. Silicon photomultiplier (SiPM) is believed to be the photodetector of the future for PET detector due to its excellent properties as compared to the traditional photodetectors such as photomultiplier tube (PMT) and avalanche photodiode (APD). The purpose of this work is to develop high resolution depth encoding small animal PET detector using dual-ended readout of finely pixelated scintillator arrays with SiPMs. Four lutetium-yttrium oxyorthosilicate (LYSO) arrays with 11 × 11 crystals and 11.6 × 11.6 × 20 mm 3 outside dimension were made using ESR, Toray and BaSO 4 reflectors. The LYSO arrays were read out with Hamamatsu 4 × 4 SiPM arrays from both ends. The SiPM array has a pixel size of 3 × 3 mm 2 , 0.2 mm gap in between the pixels and a total active area of 12.6 × 12.6 mm 2 . The flood histograms, DOI resolution, energy resolution and timing resolution of the four detector modules were measured and compared. All crystals can be clearly resolved from the measured flood histograms of all four arrays. The BaSO 4 arrays provide the best and the ESR array provides the worst flood histograms. The DOI resolution obtained from the DOI profiles of the individual crystals of the four array is from 2.1 to 2.35 mm for events with E > 350 keV. The DOI ratio variation among crystals is bigger for the BaSO 4 arrays as compared to both the ESR and Toray arrays. The BaSO 4 arrays provide worse detector based DOI resolution. The photopeak amplitude of the Toray array had the maximum change with depth, it provides the worst energy resolution of 21.3%. The photopeak amplitude of the BaSO 4 array with 80 μm reflector almost doesn't change with depth, it provides the best energy resolution of 12.9%. A maximum timing shift of 1.37 ns to 1.61 ns among the corner and the center crystals in the four arrays was obtained due to the use of resistor network readout. A crystal based timing resolution of 0.68 ns to 0.83 ns and a detector based timing resolution of 1.26 ns to 1.45 ns were obtained for the four detector modules. Four high resolution depth encoding small animal PET detectors were developed using dual-ended readout of pixelated scintillator arrays with SiPMs. The performance results show that those detectors can be used to build a small animal PET scanner to simultaneously achieve uniform high spatial resolution and high sensitivity. © 2017 American Association of Physicists in Medicine.

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

NASA Astrophysics Data System (ADS)

Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

2018-03-01

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation compared to SiG occurs, double-sided tapes are convenient alternatives for optical coupling materials since they diffuse light intrinsically, acting as a light guide, offer mechanical support and durability, are easily applied and removed from scintillators/photodetectors, and are relatively inexpensive and readily available.

Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

PubMed

Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

2018-02-26

Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation compared to SiG occurs, double-sided tapes are convenient alternatives for optical coupling materials since they diffuse light intrinsically, acting as a light guide, offer mechanical support and durability, are easily applied and removed from scintillators/photodetectors, and are relatively inexpensive and readily available.

Preliminary test results from a telescope of Hughes pixel arrays at FNAL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.; Vezie, D.

1992-09-01

In December of 1991 three silicon hybrid pixel detectors each having 2.56 [times] 2.56 pixels 30 [mu]m square, made by the Hughes Aircraft Company, were placed in a high energy muon beam at the Fermi National Accelerator Laboratory. Straight tracks were recorded in these detectors at angles to the normal to the plane of the silicon ranging from 0 to 45[degrees]. In this note, preliminary results are presented on the straight through tracks, i.e., those passing through the telescope at normal incidence. Pulse height data, signal-to-noise data, and preliminary straight line fits to the data resulting in residual distributions aremore » presented. Preliminary calculations show spatial resolution of less than 5 [mu]m in two dimensions.« less

Preliminary test results from a telescope of Hughes pixel arrays at FNAL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.; Vezie, D.

1992-09-01

In December of 1991 three silicon hybrid pixel detectors each having 2.56 {times} 2.56 pixels 30 {mu}m square, made by the Hughes Aircraft Company, were placed in a high energy muon beam at the Fermi National Accelerator Laboratory. Straight tracks were recorded in these detectors at angles to the normal to the plane of the silicon ranging from 0 to 45{degrees}. In this note, preliminary results are presented on the straight through tracks, i.e., those passing through the telescope at normal incidence. Pulse height data, signal-to-noise data, and preliminary straight line fits to the data resulting in residual distributions aremore » presented. Preliminary calculations show spatial resolution of less than 5 {mu}m in two dimensions.« less

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Microcrystalline silicon growth for heterojunction solar cells

NASA Technical Reports Server (NTRS)

Iles, P. A.; Leung, D. C.; Fang, P. H.

1983-01-01

A total of sixteen runs of e-beam vacuum deposition of p type microcrystalline Si (m-Si) films were attempted on n type or p-n junction single crystalline Si (C-Si) substrates. The m-Si film thickness varied from .15 to .7 um and metal contacts were deposited after plasma hydrogenation. The p-m-Si on n-c-Si structure had a Voc of up to 490 m V while no Voc improvements were observed in the p-m-Si on p-n C-Si structure against p-n controls. Both CFF and Jsc were lower than control. Possible problem areas were interfaced between m-Si and C-si and the back contacts due to lack of sintering for fear of dehydrogenation.

Design of 280 GHz feedhorn-coupled TES arrays for the balloon-borne polarimeter SPIDER

NASA Astrophysics Data System (ADS)

Hubmayr, Johannes; Austermann, Jason E.; Beall, James A.; Becker, Daniel T.; Benton, Steven J.; Bergman, A. Stevie; Bond, J. Richard; Bryan, Sean; Duff, Shannon M.; Duivenvoorden, Adri J.; Eriksen, H. K.; Filippini, Jeffrey P.; Fraisse, A.; Galloway, Mathew; Gambrel, Anne E.; Ganga, K.; Grigorian, Arpi L.; Gualtieri, Riccardo; Gudmundsson, Jon E.; Hartley, John W.; Halpern, M.; Hilton, Gene C.; Jones, William C.; McMahon, Jeffrey J.; Moncelsi, Lorenzo; Nagy, Johanna M.; Netterfield, C. B.; Osherson, Benjamin; Padilla, Ivan; Rahlin, Alexandra S.; Racine, B.; Ruhl, John; Rudd, T. M.; Shariff, J. A.; Soler, J. D.; Song, Xue; Ullom, Joel N.; Van Lanen, Jeff; Vissers, Michael R.; Wehus, I. K.; Wen, Shyang; Wiebe, D. V.; Young, Edward

2016-07-01

We describe 280 GHz bolometric detector arrays that instrument the balloon-borne polarimeter spider. A primary science goal of spider is to measure the large-scale B-mode polarization of the cosmic microwave background (cmb) in search of the cosmic-inflation, gravitational-wave signature. 280 GHz channels aid this science goal by constraining the level of B-mode contamination from galactic dust emission. We present the focal plane unit design, which consists of a 16x16 array of conical, corrugated feedhorns coupled to a monolithic detector array fabricated on a 150 mm diameter silicon wafer. Detector arrays are capable of polarimetric sensing via waveguide probe-coupling to a multiplexed array of transition-edge-sensor (TES) bolometers. The spider receiver has three focal plane units at 280 GHz, which in total contains 765 spatial pixels and 1,530 polarization sensitive bolometers. By fabrication and measurement of single feedhorns, we demonstrate 14.7° FHWM Gaussian-shaped beams with <1% ellipticity in a 30% fractional bandwidth centered at 280 GHz. We present electromagnetic simulations of the detection circuit, which show 94% band-averaged, single-polarization coupling efficiency, 3% reflection and 3% radiative loss. Lastly, we demonstrate a low thermal conductance bolometer, which is well-described by a simple TES model and exhibits an electrical noise equivalent power (NEP) = 2.6 x 10-17 W/√Hz, consistent with the phonon noise prediction.

Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

NASA Astrophysics Data System (ADS)

Macco, B.; Bivour, M.; Deijkers, J. H.; Basuvalingam, S. B.; Black, L. E.; Melskens, J.; van de Loo, B. W. H.; Berghuis, W. J. H.; Hermle, M.; Kessels, W. M. M. Erwin

2018-06-01

This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter J0 of 20 fA/cm2 and a surface recombination velocity Seff of 4.8 cm/s have been achieved for ultrathin films of 1 nm. The surface pretreatment was found to have a strong impact on the passivation. Good passivation can be achieved on both HF-treated c-Si surfaces and c-Si surfaces with a wet-chemically grown interfacial silicon oxide layer. On HF-treated surfaces, a minimum film thickness of 3 nm is required to achieve a high level of surface passivation, whereas the use of a wet chemically-grown interfacial oxide enables excellent passivation even for Nb2O5 films of only 1 nm. This discrepancy in passivation between both surface types is attributed to differences in the formation and stoichiometry of interfacial silicon oxide, resulting in different levels of chemical passivation. On both surface types, the high level of passivation of ALD Nb2O5 is aided by field-effect passivation originating from a high fixed negative charge density of 1-2 × 1012 cm-3. Furthermore, it is demonstrated that the passivation level provided by 1 nm of Nb2O5 can be further enhanced through light-soaking. Finally, initial explorations show that a low contact resistivity can be obtained using Nb2O5-based contacts. Together, these properties make ALD Nb2O5 a highly interesting building block for high-efficiency c-Si solar cells.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Using a flat-panel detector in high resolution cone beam CT for dental imaging.

PubMed

Baba, R; Ueda, K; Okabe, M

2004-09-01

Cone beam CT (CBCT) requires a two-dimensional X-ray detector. In the several CBCT systems developed for dental imaging, detection has been by the combination of an X-ray image intensifier and charge-coupled device (CCD) camera. In this paper, we propose a new CBCT system in which the detector is of the flat-panel type and evaluate its performance in dental imaging. We developed a prototype CBCT that has a flat-panel-type detector. The detector consists of a CsI scintillator screen and a photosensor array. First, the flat panel detector and image intensifier detector were compared in terms of the signal-to-noise ratio (SNR) of projected images. We then used these data and a theoretical formula to evaluate noise in reconstructed images. Second, reconstructed images of a bar pattern phantom were obtained as a way of evaluating the spatial resolution. Then, reconstructed images of a skull phantom were obtained. The SNR of the developed system was 1.6 times as high as that of a system with an image intensifier detector of equal detector pitch. The system was capable of resolving a 0.35 mm pattern and its field of view almost completely encompassed that of an image intensifier detector which is used in dentomaxillofacial imaging. The fine spatial resolution of the detector led to images in which the structural details of a skull phantom were clearly visible. The system's isotropically fine resolution will lead to improved precision in dental diagnosis and surgery. The next stage of our research will be the development of a flat panel detector system with a high frame acquisition rate.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Design and fabrication of two-dimensional semiconducting bolometer arrays for HAWC and SHARC-II

NASA Astrophysics Data System (ADS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. D.; Harper, D. A.; Jhabvala, Murzy D.; Moseley, S. H.; Rennick, Timothy; Shirron, Peter J.; Smith, W. W.; Staguhn, Johannes G.

2003-02-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 × 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 × 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Reflectivity quenching of ESR multilayer polymer film reflector in optically bonded scintillator arrays

NASA Astrophysics Data System (ADS)

Loignon-Houle, Francis; Pepin, Catherine M.; Charlebois, Serge A.; Lecomte, Roger

2017-04-01

The 3M-ESR multilayer polymer film is a widely used reflector in scintillation detector arrays. As specified in the datasheet and confirmed experimentally by measurements in air, it is highly reflective (> 98 %) over the entire visible spectrum (400-1000 nm) for all angles of incidence. Despite these outstanding characteristics, it was previously found that light crosstalk between pixels in a bonded LYSO scintillator array with ESR reflector can be as high as ∼30-35%. This unexplained light crosstalk motivated further investigation of ESR optical performance. Analytical simulation of a multilayer structure emulating the ESR reflector showed that the film becomes highly transparent to incident light at large angles when surrounded on both sides by materials of refractive index higher than air. Monte Carlo simulations indicate that a considerable fraction (∼25-35%) of scintillation photons are incident at these leaking angles in high aspect ratio LYSO scintillation crystals. The film transparency was investigated experimentally by measuring the scintillation light transmission through the ESR film sandwiched between a scintillation crystal and a photodetector with or without layers of silicone grease. Strong light leakage, up to nearly 30%, was measured through the reflector when coated on both sides with silicone, thus elucidating the major cause of light crosstalk in bonded arrays. The reflector transparency was confirmed experimentally for angles of incidence larger than 60 ° using a custom designed setup allowing illumination of the bonded ESR film at selected grazing angles. The unsuspected ESR film transparency can be beneficial for detector arrays exploiting light sharing schemes, but it is highly detrimental for scintillator arrays designed for individual pixel readout.

Controllable Nanoscale Inverted Pyramids for High-Efficient Quasi-Omnidirectional Crystalline Silicon Solar Cells.

PubMed

Xu, Haiyuan; Zhong, Sihua; Zhuang, Yufeng; Shen, Wenzhong

2017-11-14

Nanoscale inverted pyramid structures (NIPs) have always been regarded as one of the most paramount light management schemes to achieve the extraordinary performance in various devices, especially in solar cells, due to their outstanding antireflection ability with relative lower surface enhancement ratio. However, the current approaches to fabricating the NIPs are complicated and not cost-effective for the massive cell production in the photovoltaic industry. Here, controllable NIPs are fabricated on crystalline silicon (c-Si) wafers by Ag catalyzed chemical etching and alkaline modification, which is a preferable all-solution-processed method. Through applying the NIPs to c-Si solar cells and optimizing the cell design, we have successfully achieved highly efficient NIPs textured solar cells with the champion efficiency of 20.5%. Importantly, the NIPs textured solar cells are further demonstrated to possess the quasi-omnidirectional property over the broad sunlight incident angles of approximately 0°-60°. Moreover, the NIPs are theoretically revealed to offer light trapping advantage for ultrathin c-Si solar cells. Hence, the NIPs formed by the controllable method exhibit a great potential to be used in the future photovoltaic industry as surface texture. © 2017 IOP Publishing Ltd.

Absorptivity of semiconductors used in the production of solar cell panels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V.; Mikityuk, T. I.

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Simore » at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.« less

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

PubMed

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Performance of a high-resolution depth-encoding PET detector module using linearly-graded SiPM arrays

NASA Astrophysics Data System (ADS)

Du, Junwei; Bai, Xiaowei; Gola, Alberto; Acerbi, Fabio; Ferri, Alessandro; Piemonte, Claudio; Yang, Yongfeng; Cherry, Simon R.

2018-02-01

The goal of this study was to exploit the excellent spatial resolution characteristics of a position-sensitive silicon photomultiplier (SiPM) and develop a high-resolution depth-of-interaction (DOI) encoding positron emission tomography (PET) detector module. The detector consists of a 30  ×  30 array of 0.445  ×  0.445  ×  20 mm3 polished LYSO crystals coupled to two 15.5  ×  15.5 mm2 linearly-graded SiPM (LG-SiPM) arrays at both ends. The flood histograms show that all the crystals in the LYSO array can be resolved. The energy resolution, the coincidence timing resolution and the DOI resolution were 21.8  ±  5.8%, 1.23  ±  0.10 ns and 3.8  ±  1.2 mm, respectively, at a temperature of -10 °C and a bias voltage of 35.0 V. The performance did not degrade significantly for event rates of up to 130 000 counts s-1. This detector represents an attractive option for small-bore PET scanner designs that simultaneously emphasize high spatial resolution and high detection efficiency, important, for example, in preclinical imaging of the rodent brain with neuroreceptor ligands.

Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

NASA Astrophysics Data System (ADS)

Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

NASA Astrophysics Data System (ADS)

Black, Lachlan E.; Kessels, W. M. M. Erwin

2018-05-01

Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.

The development of infrared detectors and mechanisms for use in future infrared space missions

NASA Technical Reports Server (NTRS)

Houck, James R.

1995-01-01

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Multispectral linear array visible and shortwave infrared sensors

NASA Astrophysics Data System (ADS)

Tower, J. R.; Warren, F. B.; Pellon, L. E.; Strong, R.; Elabd, H.; Cope, A. D.; Hoffmann, D. M.; Kramer, W. M.; Longsderff, R. W.

1984-08-01

All-solid state pushbroom sensors for multispectral linear array (MLA) instruments to replace mechanical scanners used on LANDSAT satellites are introduced. A buttable, four-spectral-band, linear-format charge coupled device (CCD) and a buttable, two-spectral-band, linear-format, shortwave infrared CCD are described. These silicon integrated circuits may be butted end to end to provide multispectral focal planes with thousands of contiguous, in-line photosites. The visible CCD integrated circuit is organized as four linear arrays of 1024 pixels each. Each array views the scene in a different spectral window, resulting in a four-band sensor. The shortwave infrared (SWIR) sensor is organized as 2 linear arrays of 512 detectors each. Each linear array is optimized for performance at a different wavelength in the SWIR band.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Antireflection Coatings for Silicon in the 2.5-50-microm Region.

PubMed

Sherman, G H; Coleman, P D

1971-12-01

It has been found that vacuum-deposited films of CsI, AgCl, TlBr, and TlCl are useful as antireflection coatings for silicon over a broad spectral range in the infrared. Measurements performed on a plane-parallel silicon plate coated with various thicknesses of the above materials yield transmittance values ranging from 99% at lambda = 2.9 microm to 88% at lambda = 27 microm. Experimental details of the coating process and properties of the coatings are discussed.

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung -Wook; Karim, Karim S.

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

Sub-barrier fusion cross section measurements with STELLA

NASA Astrophysics Data System (ADS)

Heine, M.; Courtin, S.; Fruet, G.; Jenkins, D. G.; Montanari, D.; Adsley, P.; Beck, C.; Della Negra, S.; Dené, P.; Haas, F.; Hammache, F.; Heitz, G.; Kirsebom, O. S.; Krauth, M.; Lesrel, J.; Meyer, A.; Morris, L.; Regan, P. H.; Richer, M.; Rudigier, M.; de Séréville, N.; Stodel, C.

2018-01-01

The experimental setup STELLA (STELlar LAboratory) is designed for the measurement of deep sub-barrier light heavy ion fusion cross sections. For background suppression the γ-particle coincidence technique is used. In this project, LaBr3 detectors from the UK FATIMA (FAst TIMing Array) collaboration are combined with annular silicon strip detectors customized at IPHC-CNRS, Strasbourg, and the setup is located at Andromède, IPN, Orsay. The commissioning of the experimental approach as well as a sub-barrier 12C +12C → 24Mg∗ cross section measurement campaign are carried out.

Design and verification of a cloud field optical simulator

NASA Technical Reports Server (NTRS)

Davis, J. M.; Cox, S. K.; Mckee, T. B.

1982-01-01

A concept and an apparatus designed to investigate the reflected and transmitted distributions of light from optically thick clouds is presented. The Cloud Field Optical Simulator (CFOS) is a laboratory device which utilizes an array of incandescent lamps as a source, simulated clouds made from cotton or styrofoam as targets, and an array of silicon photodiodes as detectors. The device allows virtually any source-target-detector geometry to be examined. Similitude between real clouds and their CFOS cotton or styrofoam counterparts is established by relying on a linear relationship between optical depth and the ratio of reflected to transmitted light for a semi-infinite layer. Comparisons of principal plane radiances observed by the CFOS with Monte Carlo computations for a water cloud at 0.7 microns show excellent agreement.

Approaching total absorption of graphene strips using a c-Si subwavelength periodic membrane

NASA Astrophysics Data System (ADS)

Sang, Tian; Wang, Rui; Li, Junlang; Zhou, Jianyu; Wang, Yueke

2018-04-01

Approaching total absorption of graphene strips at near infrared using a crystalline-silicon (c-Si) subwavelength periodic membrane (SPM) is presented. The absorption in graphene strips in a c-Si SPM is enhanced by a resonant tip, which is resulted from the coupling between the guided mode and the radiation mode through symmetry breaking of the structure at near-normal incidence. The enhancement of the electric field intensity is increased 1939 times and the group velocity of light is decreased to 3.55 ×10-4c at resonance, and 99.3% absorption in graphene strips can be achieved by critical coupling at the incident angle of 2°. High absorption of the graphene strips can be maintained as the etching thickness, the strip width, and the period are altered. When this type of c-Si SPM with graphene strips is used in refractive index sensors, it shows excellent sensing properties due to its stable near-unity absorption.

Scalable Background-Limited Polarization-Sensitive Detectors for mm-wave Applications

NASA Technical Reports Server (NTRS)

Rostem, Karwan; Ali, Aamir; Appel, John W.; Bennett, Charles L.; Chuss, David T.; Colazo, Felipe A.; Crowe, Erik; Denis, Kevin L.; Essinger-Hileman, Tom; Marriage, Tobias A.;

Silicon photomultipliers for scintillating trackers

NASA Astrophysics Data System (ADS)

Rabaioli, S.; Berra, A.; Bolognini, D.; Bonvicini, V.; Bosisio, L.; Ciano, S.; Iugovaz, D.; Lietti, D.; Penzo, A.; Prest, M.; Rashevskaya, I.; Reia, S.; Stoppani, L.; Vallazza, E.

2012-12-01

In recent years, silicon photomultipliers (SiPMs) have been proposed as a new kind of readout device for scintillating detectors in many experiments. A SiPM consists of a matrix of parallel-connected pixels, which are independent photon counters working in Geiger mode with very high gain (∼106). This contribution presents the use of an array of eight SiPMs (manufactured by FBK-irst) for the readout of a scintillating bar tracker (a small size prototype of the Electron Muon Ranger detector for the MICE experiment). The performances of the SiPMs in terms of signal to noise ratio, efficiency and time resolution will be compared to the ones of a multi-anode photomultiplier tube (MAPMT) connected to the same bars. Both the SiPMs and the MAPMT are interfaced to a VME system through a 64 channel MAROC ASIC.

IRIS : A reaction spectroscopy facility with solid H2 /D2 target

NASA Astrophysics Data System (ADS)

Holl, Matthias; Kanungo, Ritu; Alcorta, Martin; Andreoiu, Corina; Bidaman, Harris; Burbadge, Christina; Burke, Devin; Chen, Alan; Davids, Barry; Diaz Varela, Alejandra; Garrett, Paul; Hackman, Greg; Ishimoto, Shigeru; Kaur, Satbir; Keefe, Matthew; Kruecken, Reiner; Mansour, Iymad; Randhawa, Jaspreet; Sanetullaev, Alisher; Shotter, Alan; Smith, Jenna; Tanaka, Junki; Tanihata, Isao; Turko, Joseph; Workman, Orry

2016-09-01

The charged particle reaction spectroscopy station IRIS at TRIUMF is designed to allow studies of inelastic scattering and transfer reactions for low intensity beams. To do so, a novel solid H2 /D2 target is used in combination with a low pressure ionization chamber for the identification of incoming beam particles. The light ejectiles are measured using a ΔE - E telescope consisting of an annular silicon detector followed by CsI(Tl) array. Another ΔE - E telescope, consisting of two segmented silicon detectors, is used to identify the heavy outgoing particles. An overview of the faciltity will be given and examples from recent experiments that illustrate that facility's capability for reaction studies of exotic nuclei will be shown. Support from Canada Foundation for Innovation, Nova Scotia Research and Innovation Trust and NSERC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Next decade in infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.

2017-10-01

Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

Silicon photomultipliers in scintillation detectors used for gamma ray energies up to 6.1 MeV

NASA Astrophysics Data System (ADS)

Grodzicka-Kobylka, M.; Szczesniak, T.; Moszyński, M.; Swiderski, L.; Szawłowski, M.

2017-12-01

Majority of papers concerning scintillation detectors with light readout by means of silicon photomultipliers refer to nuclear medicine or radiation monitoring devices where energy of detected gamma rays do not exceed 2 MeV. Detection of gamma radiation with higher energies is of interest to e.g. high energy physics and plasma diagnostics. The aim of this paper is to study applicability (usefulness) of SiPM light readout in detection of gamma rays up to 6.1 MeV in combination with various scintillators. The reported measurements were made with 3 samples of one type of Hamamatsu TSV (Through-Silicon Via technology) MPPC arrays. These 4x4 channel arrays have a 50 × 50 μm2 cell size and 12 × 12 mm2 effective active area. The following scintillators were used: CeBr3, NaI:Tl, CsI:Tl. During all the tests detectors were located in a climatic chamber. The studies are focused on optimization of the MPPC performance for practical use in detection of high energy gamma rays. The optimization includes selection of the optimum operating voltage in respect to the required energy resolution, dynamic range, linearity and pulse amplitude. The presented temperature tests show breakdown voltage dependence on the temperature change and define requirements for a power supply and gain stabilization method. The energy spectra for energies between 511 keV and 6.1 MeV are also presented and compared with data acquired with a classic photomultiplier XP5212B readout. Such a comparison allowed study of nonlinearity of the tested MPPCs, correction of the energy spectra and proper analysis of the energy resolution.

X-ray characterization of a multichannel smart-pixel array detector.

PubMed

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

2016-01-01

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

Label-free silicon photonic biosensor system with integrated detector array.

PubMed

Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

2009-08-07

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

Label-free silicon photonic biosensor system with integrated detector array

PubMed Central

Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

2010-01-01

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aab, A.; Abreu, P.; Aglietta, M.

Here, AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m 2 detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), ismore » proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98% efficiency for the highest tested overvoltage, combined with a low probability of accidental counting (~2%), show a promising performance for this new system.« less

Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

PubMed

Yang, Zhenhai; Shang, Aixue; Qin, Linling; Zhan, Yaohui; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

2016-04-01

We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 μm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 μm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10  mA/cm² in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Optimization of Performance Parameters for Large Area Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Janzen, Kathryn

2008-10-01

The goal of the GlueX experiment is to search for exotic hybrid mesons as evidence of gluonic excitations in an effort to better understand confinement. A key component of the GlueX detector is the electromagnetic barrel calorimeter (BCAL) located immediately inside a superconducting solenoid of approximately 2.5T. Because of this arrangement, traditional vacuum photomultiplier tubes (PMTs) which are affected significantly by magnetic fields cannot be used on the BCAL. The use of Silicon photomultipliers (SiPMs) as front-end detectors has been proposed. While the largest SiPMs that have been previously employed by other experiments are 1x1 mm^2, GlueX proposes to use large area SiPMs each composed of 16 - 3x3 mm^2 cells in a 4x4 array. This puts the GlueX collaboration in the unique position of driving the technology for larger area sensors. In this talk I will discuss tests done in Regina regarding performance parameters of prototype SiPM arrays delivered by SensL, a photonics research and development company based in Ireland, as well as sample 1x1 mm^2 and 3x3 mm^2 SiPMs.

Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

NASA Astrophysics Data System (ADS)

Schuster, J.

2018-02-01

Military requirements demand both single and dual-color infrared (IR) imaging systems with both high resolution and sharp contrast. To quantify the performance of these imaging systems, a key measure of performance, the modulation transfer function (MTF), describes how well an optical system reproduces an objects contrast in the image plane at different spatial frequencies. At the center of an IR imaging system is the focal plane array (FPA). IR FPAs are hybrid structures consisting of a semiconductor detector pixel array, typically fabricated from HgCdTe, InGaAs or III-V superlattice materials, hybridized with heat/pressure to a silicon read-out integrated circuit (ROIC) with indium bumps on each pixel providing the mechanical and electrical connection. Due to the growing sophistication of the pixel arrays in these FPAs, sophisticated modeling techniques are required to predict, understand, and benchmark the pixel array MTF that contributes to the total imaging system MTF. To model the pixel array MTF, computationally exhaustive 2D and 3D numerical simulation approaches are required to correctly account for complex architectures and effects such as lateral diffusion from the pixel corners. It is paramount to accurately model the lateral di_usion (pixel crosstalk) as it can become the dominant mechanism limiting the detector MTF if not properly mitigated. Once the detector MTF has been simulated, it is directly decomposed into its constituent contributions to reveal exactly what is limiting the total detector MTF, providing a path for optimization. An overview of the MTF will be given and the simulation approach will be discussed in detail, along with how different simulation parameters effect the MTF calculation. Finally, MTF optimization strategies (crosstalk mitigation) will be discussed.

A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications.

PubMed

Wang, Qiang; Wen, Jie; Ravindranath, Bosky; O'Sullivan, Andrew W; Catherall, David; Li, Ke; Wei, Shouyi; Komarov, Sergey; Tai, Yuan-Chuan

2015-09-11

Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC's active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4 × 4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16 × 16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92 × 0.92 × 3 mm 3 with 1.0 mm pitch. The outer diameter of the detector block is 16.8 × 16.8 mm 2 . Thirty-two such blocks will be arranged in a 4 × 8 array with 1 mm gaps to form a panel detector with detection area around 7 cm × 14 cm in the full-size detector. The flood histogram acquired with Ge-68 source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module's mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, +/-0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules.

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

PubMed

Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

2015-11-06

We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

Advanced ACTPol Cryogenic Detector Arrays and Readout

NASA Astrophysics Data System (ADS)

Henderson, S. W.; Allison, R.; Austermann, J.; Baildon, T.; Battaglia, N.; Beall, J. A.; Becker, D.; De Bernardis, F.; Bond, J. R.; Calabrese, E.; Choi, S. K.; Coughlin, K. P.; Crowley, K. T.; Datta, R.; Devlin, M. J.; Duff, S. M.; Dunkley, J.; Dünner, R.; van Engelen, A.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Hills, F.; Hilton, G. C.; Hincks, A. D.; Hloẑek, R.; Ho, S. P.; Hubmayr, J.; Huffenberger, K.; Hughes, J. P.; Irwin, K. D.; Koopman, B. J.; Kosowsky, A. B.; Li, D.; McMahon, J.; Munson, C.; Nati, F.; Newburgh, L.; Niemack, M. D.; Niraula, P.; Page, L. A.; Pappas, C. G.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Sehgal, N.; Sherwin, B. D.; Sievers, J. L.; Simon, S. M.; Spergel, D. N.; Staggs, S. T.; Stevens, J. R.; Thornton, R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

Advanced ACTPol is a polarization-sensitive upgrade for the 6 m aperture Atacama Cosmology Telescope, adding new frequencies and increasing sensitivity over the previous ACTPol receiver. In 2016, Advanced ACTPol will begin to map approximately half the sky in five frequency bands (28-230 GHz). Its maps of primary and secondary cosmic microwave background anisotropies—imaged in intensity and polarization at few arcminute-scale resolution—will enable precision cosmological constraints and also a wide array of cross-correlation science that probes the expansion history of the universe and the growth of structure via gravitational collapse. To accomplish these scientific goals, the Advanced ACTPol receiver will be a significant upgrade to the ACTPol receiver, including four new multichroic arrays of cryogenic, feedhorn-coupled AlMn transition edge sensor polarimeters (fabricated on 150 mm diameter wafers); a system of continuously rotating meta-material silicon half-wave plates; and a new multiplexing readout architecture which uses superconducting quantum interference devices and time division to achieve a 64-row multiplexing factor. Here we present the status and scientific goals of the Advanced ACTPol instrument, emphasizing the design and implementation of the Advanced ACTPol cryogenic detector arrays.

Advanced ACTPol Cryogenic Detector Arrays and Readout

NASA Technical Reports Server (NTRS)

Henderson, S.W.; Allison, R.; Austermann, J.; Baildon, T.; Battaglia, N.; Beall, J. A.; Becker, D.; De Bernardis, F.; Bond, J. R.; Wollack, E. J.

2016-01-01

Advanced ACTPol is a polarization-sensitive upgrade for the 6 m aperture Atacama Cosmology Telescope, adding new frequencies and increasing sensitivity over the previous ACTPol receiver. In 2016, Advanced ACTPol will begin to map approximately half the sky in five frequency bands (28-230 GHz). Its maps of primary and secondary cosmic microwave background anisotropies-imaged in intensity and polarization at few arcminute-scale resolution-will enable precision cosmological constraints and also awide array of cross-correlation science that probes the expansion history of the universe and the growth of structure via gravitational collapse. To accomplish these scientific goals, the AdvancedACTPol receiver will be a significant upgrade to the ACTPol receiver, including four new multichroic arrays of cryogenic, feedhorn-coupled AlMn transition edge sensor polarimeters (fabricated on 150 mm diameter wafers); a system of continuously rotating meta-material silicon half-wave plates; and a new multiplexing readout architecture which uses superconducting quantum interference devices and time division to achieve a 64-row multiplexing factor. Here we present the status and scientific goals of the Advanced ACTPol instrument, emphasizing the design and implementation of the AdvancedACTPol cryogenic detector arrays.

Shortwave infrared 512 x 2 line sensor for earth resources applications

NASA Astrophysics Data System (ADS)

Tower, J. R.; Pellon, L. E.; McCarthy, B. M.; Elabd, H.; Moldovan, A. G.; Kosonocky, W. F.; Kalshoven, J. E., Jr.; Tom, D.

1985-08-01

As part of the NASA remote-sensing Multispectral Linear Array Program, an edge-buttable 512 x 2 IRCCD line image sensor with 30-micron Pd2Si Schottky-barrier detectors is developed for operation with passive cooling at 120 K in the 1.1-2.5 micron short infrared band. On-chip CCD multiplexers provide one video output for each 512 detector band. The monolithic silicon line imager performance at a 4-ms optical integration time includes a signal-to-noise ratio of 241 for irradiance of 7.2 microwatts/sq cm at 1.65 microns wavelength, a 5000 dynamic range, a modulation transfer function, greater than 60 percent at the Nyquist frequency, and an 18-milliwatt imager chip total power dissipation. Blemish-free images with three percent nonuniformity under illumination and nonlinearity of 1.25 percent are obtained. A five SWIR imager hybrid focal plane was constructed, demonstrating the feasibility of arrays with only a two-detector loss at each joint.

Antenna-coupled Superconducting Bolometers for Observations of the Cosmic Microwave Background Polarization

NASA Astrophysics Data System (ADS)

Myers, Michael James

We describe the development of a novel millimeter-wave cryogenic detector. The device integrates a planar antenna, superconducting transmission line, bandpass filter, and bolometer onto a single silicon wafer. The bolometer uses a superconducting Transition-Edge Sensor (TES) thermistor, which provides substantial advantages over conventional semiconductor bolometers. The detector chip is fabricated using standard micro-fabrication techniques. This highly-integrated detector architecture is particularly well-suited for use in the de- velopment of polarization-sensitive cryogenic receivers with thousands of pixels. Such receivers are needed to meet the sensitivity requirements of next-generation cosmic microwave background polarization experiments. The design, fabrication, and testing of prototype array pixels are described. Preliminary considerations for a full array design are also discussed. A set of on-chip millimeter-wave test structures were developed to help understand the performance of our millimeter-wave microstrip circuits. These test structures produce a calibrated transmission measurement for an arbitrary two-port circuit using optical techniques, rather than a network analyzer. Some results of fabricated test structures are presented.

Monte Carlo simulation of the dose response of a novel 2D silicon diode array for use in hybrid MRI-LINAC systems.

PubMed

Gargett, Maegan; Oborn, Brad; Metcalfe, Peter; Rosenfeld, Anatoly

2015-02-01

MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named "magic plate," for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. geant4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-line and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm(3)) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm(2) area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm(2) photon field size. The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI-linear accelerator systems. In the in-line orientation, the silicon dose is directly proportional to the water dose. In the perpendicular orientation, there is a shift in dose response relative to water in the highest dose gradient regions, at the edge of jaw-defined and single-segment MLC fields. The trend was not observed in-field for an IMRT beam. The array is expected to be a valuable tool in MRIgRT dosimetry.

Monte Carlo simulation of the dose response of a novel 2D silicon diode array for use in hybrid MRI–LINAC systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gargett, Maegan, E-mail: mg406@uowmail.edu.au; Rosenfeld, Anatoly; Oborn, Brad

2015-02-15

Purpose: MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named “magic plate,” for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. Methods: GEANT4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-linemore » and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm{sup 3}) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm{sup 2} area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm{sup 2} photon field size. Results: The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. Conclusions: A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI–linear accelerator systems. In the in-line orientation, the silicon dose is directly proportional to the water dose. In the perpendicular orientation, there is a shift in dose response relative to water in the highest dose gradient regions, at the edge of jaw-defined and single-segment MLC fields. The trend was not observed in-field for an IMRT beam. The array is expected to be a valuable tool in MRIgRT dosimetry.« less

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.;

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.

2002-01-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Geant4 simulations of the absorption of photons in CsI and NaI produced by electrons with energies up to 4 MeV and their application to precision measurements of the β-energy spectrum with a calorimetric technique

NASA Astrophysics Data System (ADS)

Huyan, X.; Naviliat-Cuncic, O.; Voytas, P.; Chandavar, S.; Hughes, M.; Minamisono, K.; Paulauskas, S. V.

2018-01-01

The yield of photons produced by electrons slowing down in CsI and NaI was studied with four electromagnetic physics constructors included in the Geant4 toolkit. The subsequent absorption of photons in detector geometries used for measurements of the β spectrum shape was also studied with a focus on the determination of the absorption fraction. For electrons with energies in the range 0.5-4 MeV, the relative photon yields determined with the four Geant4 constructors differ at the level of 10-2 in amplitude and the relative absorption fractions differ at the level of 10-4 in amplitude. The differences among constructors enabled the estimation of the sensitivity to Geant4 simulations for the measurement of the β energy spectrum shape in 6He decay using a calorimetric technique with ions implanted in the active volume of detectors. The size of the effect associated with photons escaping the detectors was quantified in terms of a slope which, on average, is respectively - 5 . 4 %/MeV and - 4 . 8 %/MeV for the CsI and NaI geometries. The corresponding relative uncertainties as determined from the spread of results obtained with the four Geant4 constructors are 0.0067 and 0.0058.

About the optical properties of oxidized black silicon structures

NASA Astrophysics Data System (ADS)

Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

2017-02-01

The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

George, B. M.; Behrends, J.; Schnegg, A.; Schulze, T. F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W. G.; Gerstmann, U.

2013-03-01

Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.

MMW/THz imaging using upconversion to visible, based on glow discharge detector array and CCD camera

NASA Astrophysics Data System (ADS)

Aharon, Avihai; Rozban, Daniel; Abramovich, Amir; Yitzhaky, Yitzhak; Kopeika, Natan S.

2017-10-01

An inexpensive upconverting MMW/THz imaging method is suggested here. The method is based on glow discharge detector (GDD) and silicon photodiode or simple CCD/CMOS camera. The GDD was previously found to be an excellent room-temperature MMW radiation detector by measuring its electrical current. The GDD is very inexpensive and it is advantageous due to its wide dynamic range, broad spectral range, room temperature operation, immunity to high power radiation, and more. An upconversion method is demonstrated here, which is based on measuring the visual light emitting from the GDD rather than its electrical current. The experimental setup simulates a setup that composed of a GDD array, MMW source, and a basic CCD/CMOS camera. The visual light emitting from the GDD array is directed to the CCD/CMOS camera and the change in the GDD light is measured using image processing algorithms. The combination of CMOS camera and GDD focal plane arrays can yield a faster, more sensitive, and very inexpensive MMW/THz camera, eliminating the complexity of the electronic circuits and the internal electronic noise of the GDD. Furthermore, three dimensional imaging systems based on scanning prohibited real time operation of such imaging systems. This is easily solved and is economically feasible using a GDD array. This array will enable us to acquire information on distance and magnitude from all the GDD pixels in the array simultaneously. The 3D image can be obtained using methods like frequency modulation continuous wave (FMCW) direct chirp modulation, and measuring the time of flight (TOF).

MO-F-CAMPUS-J-03: Development of a Human Brain PET for On-Line Proton Beam-Range Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Yiping

Purpose: To develop a prototype PET for verifying proton beam-range before each fractionated therapy that will enable on-line re-planning proton therapy. Methods: Latest “edge-less” silicon photomultiplier arrays and customized ASIC readout electronics were used to develop PET detectors with depth-of-interaction (DOI) measurement capability. Each detector consists of one LYSO array with each end coupled to a SiPM array. Multiple detectors can be seamlessly tiled together to form a large detector panel. Detectors with 1.5×1.5 and 2.0×2.0 mm crystals at 20 or 30 mm lengths were studied. Readout of individual SiPM or signal multiplexing was used to transfer 3D interaction position-codedmore » analog signals through flexible-print-circuit cables or PCB board to dedicated ASIC front-end electronics to output digital timing pulses that encode interaction information. These digital pulses can be transferred to, through standard LVDS cables, and decoded by a FPGA-based data acquisition of coincidence events and data transfer. The modular detector and scalable electronics/data acquisition will enable flexible PET system configuration for different imaging geometry. Results: Initial detector performance measurement shows excellent crystal identification even with 30 mm long crystals, ∼18% and 2.8 ns energy and timing resolutions, and around 2–3 mm DOI resolution. A small prototype PET scanner with one detector ring has been built and evaluated, validating the technology and design. A large size detector panel has been fabricated by scaling up from modular detectors. Different designs of resistor and capacitor based signal multiplexing boards were tested and selected based on optimal crystal identification and timing performance. Stackable readout electronics boards and FPGA-based data acquisition boards were developed and tested. A brain PET is under construction. Conclusion: Technology of large-size DOI detector based on SiPM array and advanced readout has been developed. PET imaging performance and initial phantom studies of on-line proton beam-range measurement will be conducted and reported. NIH grant R21CA187717; Cancer Prevention and Research Institute of Texas grant RP120326.« less

Optical and IR applications in astronomy and astrophysics

NASA Astrophysics Data System (ADS)

McLean, Ian S.

2009-06-01

The set comprising silicon charge-coupled devices, low band-gap infrared arrays and bolometer arrays provide astronomers with position-sensitive photon detectors from the X-ray to the sub-mm. In recent years the most significant advances have occurred in the near-infrared part of the spectrum because not only have the detector formats caught up with those of charge-coupled device (CCDs) but also because the advent of adaptive optics (AO) has meant that the very largest telescopes can achieve their diffraction limit in the near-infrared. Thus infrared cameras, spectrometers and hybrid instruments that measure spatial and spectral information simultaneously are now commanding the greatest attention on telescopes from 6.5 to 10 m in effective aperture. Scientific applications of these new infrared instruments span everything from the search for nearby solar systems to the orbital motions of stars about the massive black hole at the center of the Milky Way, and studies of the first galaxies to form in the high redshift Universe. Background, principles and applications of infrared array detectors to astronomy and astrophysics will be discussed with particular emphasis on work at the W.M. Keck 10-m telescope on Mauna Kea, Hawaii.

On-ground calibration of AGILE-GRID with a photon beam: results and lessons for the future

NASA Astrophysics Data System (ADS)

Cattaneo, P. W.; Rappoldi, A.

2013-06-01

On the AGILE satellite, there is the Gamma Ray Imaging Detector (GRID) consisting of a Silicon Tracker (ST), a Cesium Iodide Mini-Calorimeter and an Anti-Coincidence system of plastic scintillator bars. The ST needs a calibration with a γ-ray beam to validate the simulation used to calculate the detector response versus the energy and the direction of the γ rays. A tagged γ-ray beam line was designed at the Beam Test Facility of the Laboratori Nazionali of Frascati, generated by an electron beam through bremsstrahlung in a position-sensitive target. The γ-ray energy is deduced by the difference with the post-bremsstrahlung electron energy [P. W. Cattaneo, et al., Characterization of a tagged γ-ray beam line at the daΦne beam test facility, Nucl. Instr. and Meth. A 674 (2012) 55-66; P. W. Cattaneo, et al., First results about on-ground calibration of the silicon tracker for the agile satellite, Nucl. Instr. and Meth. A 630(1) (2011) 251-257.]. The electron energy is measured by a spectrometer consisting of a dipole magnet and an array of position sensitive silicon strip detectors, the Photon Tagging System (PTS). In this paper the setup and the calibration of AGILE performed in 2005 are described.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

PubMed

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Characterization of perovskite layer on various nanostructured silicon wafer

NASA Astrophysics Data System (ADS)

Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib; Zaidi, Saleem H.

2017-05-01

Crystalline silicon (c-Si) solar cell dominates 90% of photovoltaic (PV) market. The c-Si is the most mature of all PV technologies and expected to remain leading the PV technology by 2050. The attractive characters of Si solar cell are stability, long lasting and higher lifetime. Presently, the efficiency of c-Si solar cell is still stuck at 25% for one and half decades. Tandem approach is one of the attempts to improve the Si solar cell efficiency with higher bandgap layer is stacked on top of Si bottom cell. Perovskite offers a big potential to be inserted into a tandem solar cell. Perovskite with bandgap of 1.6 to 1.9 eV will be able to absorb high energy photons, meanwhile c-Si with bandgap of 1.124 eV will absorb low energy photons. The high carrier mobility, high carrier lifetime, highly compatible with both solution and evaporation techniques makes perovskite an eligible candidate for perovskite-Si tandem configuration. The solution of methyl ammonium lead iodide (MAPbI3) was prepared by single step precursor process. The perovskite layer was deposited on different c-Si surface structure, namely planar, textured and Si nanowires (SiNWs) by using spin-coating technique at different rotation speeds. The nanostructure of Si surface was textured using alkaline based wet chemical etching process and SiNW was grown using metal assisted etching technique. The detailed surface morphology and absorbance of perovskite were studied in this paper. The results show that the thicknesses of MAPbI3 were reduced with the increasing of rotation speed. In addition, the perovskite layer deposited on the nanostructured Si wafer became rougher as the etching time and rotation speed increased. The average surface roughness increased from ˜24 nm to ˜38 nm for etching time range between 5-60 min at constant low rotation speed (2000 rpm) for SiNWs Si wafer.

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

A Compact Imaging Detector of Polarization and Spectral Content

NASA Technical Reports Server (NTRS)

Rust, D. M.; Kumar, A.; Thompson, K. E.

1993-01-01

A new type of image detector will simultaneously analyze the polarization of light at all picture elements in a scene. The integrated Dual Imaging Detector (IDID) consists of a polarizing beam splitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. The polarizing beam splitter can be either a Ronchi ruling, or an array of cylindrical lenslets, bonded to a birefringent wafer. The wafer, in turn, is bonded to the CCD so that light in the two orthogonal planes of polarization falls on adjacent pairs of pixels. The use of a high-index birefringent material, e.g., rutile, allows the IDID to operate at f-numbers as high as f/3.5. Other aspects of the detector are discussed.

Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

NASA Astrophysics Data System (ADS)

Jackson, John C.; Phelan, Don; Morrison, Alan P.; Redfern, R. Michael; Mathewson, Alan

2002-05-01

Geiger mode avalanche photodiodes (APD) can be biased above the breakdown voltage to allow detection of single photons. Because of the increase in quantum efficiency, magnetic field immunity, robustness, longer operating lifetime and reduction in costs, solid-state detectors capable of operating at non-cryogenic temperatures and providing single photon detection capabilities provide attractive alternatives to the photomultiplier tube (PMT). Shallow junction Geiger mode APD detectors provide the ability to manufacture photon detectors and detector arrays with CMOS compatible processing steps and allows the use of novel Silicon-on-Insulator(SoI) technology to provide future integrated sensing solutions. Previous work on Geiger mode APD detectors has focused on increasing the active area of the detector to make it more PMT like, easing the integration of discrete reaction, detection and signal processing into laboratory experimental systems. This discrete model for single photon detection works well for laboratory sized test and measurement equipment, however the move towards microfluidics and systems on a chip requires integrated sensing solutions. As we move towards providing integrated functionality of increasingly nanoscopic sized emissions, small area detectors and detector arrays that can be easily integrated into marketable systems, with sensitive small area single photon counting detectors will be needed. This paper will demonstrate the 2-dimensional and 3-dimensional simulation of optical coupling that occurs in Geiger mode APDs. Fabricated Geiger mode APD detectors optimized for fluorescence decay measurements were characterized and preliminary results show excellent results for their integration into fluorescence decay measurement systems.

Readout, first- and second-level triggers of the new Belle silicon vertex detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Abe, R.; Abe, T.; Aihara, H.; Asano, Y.; Aso, T.; Bakich, A.; Browder, T.; Chang, M. C.; Chao, Y.; Chen, K. F.; Chidzik, S.; Dalseno, J.; Dowd, R.; Dragic, J.; Everton, C. W.; Fernholz, R.; Fujii, H.; Gao, Z. W.; Gordon, A.; Guo, Y. N.; Haba, J.; Hara, K.; Hara, T.; Harada, Y.; Haruyama, T.; Hasuko, K.; Hayashi, K.; Hazumi, M.; Heenan, E. M.; Higuchi, T.; Hirai, H.; Hitomi, N.; Igarashi, A.; Igarashi, Y.; Ikeda, H.; Ishino, H.; Itoh, K.; Iwaida, S.; Kaneko, J.; Kapusta, P.; Karawatzki, R.; Kasami, K.; Kawai, H.; Kawasaki, T.; Kibayashi, A.; Koike, S.; Korpar, S.; Križan, P.; Kurashiro, H.; Kusaka, A.; Lesiak, T.; Limosani, A.; Lin, W. C.; Marlow, D.; Matsumoto, H.; Mikami, Y.; Miyake, H.; Moloney, G. R.; Mori, T.; Nakadaira, T.; Nakano, Y.; Natkaniec, Z.; Nozaki, S.; Ohkubo, R.; Ohno, F.; Okuno, S.; Onuki, Y.; Ostrowicz, W.; Ozaki, H.; Peak, L.; Pernicka, M.; Rosen, M.; Rozanska, M.; Sato, N.; Schmid, S.; Shibata, T.; Stamen, R.; Stanič, S.; Steininger, H.; Sumisawa, K.; Suzuki, J.; Tajima, H.; Tajima, O.; Takahashi, K.; Takasaki, F.; Tamura, N.; Tanaka, M.; Taylor, G. N.; Terazaki, H.; Tomura, T.; Trabelsi, K.; Trischuk, W.; Tsuboyama, T.; Uchida, K.; Ueno, K.; Ueno, K.; Uozaki, N.; Ushiroda, Y.; Vahsen, S.; Varner, G.; Varvell, K.; Velikzhanin, Y. S.; Wang, C. C.; Wang, M. Z.; Watanabe, M.; Watanabe, Y.; Yamada, Y.; Yamamoto, H.; Yamashita, Y.; Yamashita, Y.; Yamauchi, M.; Yanai, H.; Yang, R.; Yasu, Y.; Yokoyama, M.; Ziegler, T.; Žontar, D.

2004-12-01

A major upgrade of the Silicon Vertex Detector (SVD 2.0) of the Belle experiment at the KEKB factory was installed along with new front-end and back-end electronics systems during the summer shutdown period in 2003 to cope with higher particle rates, improve the track resolution and meet the increasing requirements of radiation tolerance. The SVD 2.0 detector modules are read out by VA1TA chips which provide "fast or" (hit) signals that are combined by the back-end FADCTF modules to coarse, but immediate level 0 track trigger signals at rates of several tens of a kHz. Moreover, the digitized detector signals are compared to threshold lookup tables in the FADCTFs to pass on hit information on a single strip basis to the subsequent level 1.5 trigger system, which reduces the rate below the kHz range. Both FADCTF and level 1.5 electronics make use of parallel real-time processing in Field Programmable Gate Arrays (FPGAs), while further data acquisition and event building is done by PC farms running Linux. The new readout system hardware is described and the first results obtained with cosmics are shown.

High-precision X-ray spectroscopy of highly-charged ions at the experimental storage ring using silicon microcalorimeters

NASA Astrophysics Data System (ADS)

Scholz, Pascal A.; Andrianov, Victor; Echler, Artur; Egelhof, Peter; Kilbourne, Caroline; Kiselev, Oleg; Kraft-Bermuth, Saskia; McCammon, Dan

2017-10-01

X-ray spectroscopy on highly charged heavy ions provides a sensitive test of quantum electrodynamics in very strong Coulomb fields. One limitation of the current accuracy of such experiments is the energy resolution of available X-ray detectors for energies up to 100 keV. To improve this accuracy, a novel detector concept, namely the concept of microcalorimeters, is exploited for this kind of measurements. The microcalorimeters used in the present experiments consist of silicon thermometers, ensuring a high dynamic range, and of absorbers made of high-Z material to provide high X-ray absorption efficiency. Recently, besides an earlier used detector, a new compact detector design, housed in a new dry cryostat equipped with a pulse tube cooler, was applied at a test beamtime at the experimental storage ring (ESR) of the GSI facility in Darmstadt. A U89+ beam at 75 MeV/u and a 124Xe54+ beam at various beam energies, both interacting with an internal gas-jet target, were used in different cycles. This test was an important benchmark for designing a larger array with an improved lateral sensitivity and statistical accuracy.

Visual grading analysis of digital neonatal chest phantom X-ray images: Impact of detector type, dose and image processing on image quality.

PubMed

Smet, M H; Breysem, L; Mussen, E; Bosmans, H; Marshall, N W; Cockmartin, L

2018-07-01

To evaluate the impact of digital detector, dose level and post-processing on neonatal chest phantom X-ray image quality (IQ). A neonatal phantom was imaged using four different detectors: a CR powder phosphor (PIP), a CR needle phosphor (NIP) and two wireless CsI DR detectors (DXD and DRX). Five different dose levels were studied for each detector and two post-processing algorithms evaluated for each vendor. Three paediatric radiologists scored the images using European quality criteria plus additional questions on vascular lines, noise and disease simulation. Visual grading characteristics and ordinal regression statistics were used to evaluate the effect of detector type, post-processing and dose on VGA score (VGAS). No significant differences were found between the NIP, DXD and CRX detectors (p>0.05) whereas the PIP detector had significantly lower VGAS (p< 0.0001). Processing did not influence VGAS (p=0.819). Increasing dose resulted in significantly higher VGAS (p<0.0001). Visual grading analysis (VGA) identified a detector air kerma/image (DAK/image) of ~2.4 μGy as an ideal working point for NIP, DXD and DRX detectors. VGAS tracked IQ differences between detectors and dose levels but not image post-processing changes. VGA showed a DAK/image value above which perceived IQ did not improve, potentially useful for commissioning. • A VGA study detects IQ differences between detectors and dose levels. • The NIP detector matched the VGAS of the CsI DR detectors. • VGA data are useful in setting initial detector air kerma level. • Differences in NNPS were consistent with changes in VGAS.

Tuning the colors of c-Si solar cells by exploiting plasmonic effects

NASA Astrophysics Data System (ADS)

Peharz, G.; Grosschädl, B.; Prietl, C.; Waldhauser, W.; Wenzl, F. P.

2016-09-01

The color of a crystalline silicon (c-Si) solar cell is mainly determined by its anti-reflective coating. This is a lambda/4 coating made from a transparent dielectric material. The thickness of the anti-reflective coating is optimized for maximal photocurrent generation, resulting in the typical blue or black colors of c-Si solar cells. However, for building-integrated photovoltaic (BiPV) applications the color of the solar cells is demanded to be tunable - ideally by a cheap and flexible coating process on standard (low cost) c-Si solar cells. Such a coating can be realized by applying plasmonic coloring which is a rapidly growing technology for high-quality color filtering and rendering for different fields of application (displays, imaging,…). In this contribution, we present results of an approach for tuning the color of standard industrial c-Si solar cells that is based on coating them with metallic nano-particles. In particular, thin films (< 20 nm) of a metal (e.g., silver) were sputtered onto c-Si solar cells and thermally annealed subsequently. The sizes and the shapes of the nano-particles (characterized by SEM) were found to depend on the thickness of the deposited films and the surface roughness of the substrates/solar cells. With such an approach it is possible to tune the color of the standard c-Si cells from blue to green and brownish/red. The position of the resonance peak in the reflection spectrum was found to be almost independent from the angle of incidence. This low angular sensitivity is a clear advantage compared to alternative color tuning methods, for which additional dielectric thin films are deposited on c-Si solar cells.

Design and verification of a cloud field optical simulator

NASA Technical Reports Server (NTRS)

Davis, J. M.; Cox, S. K.; Mckee, T. B.

1983-01-01

A concept and an apparatus designed to investigate the reflected and transmitted distributions of light from optically thick clouds is presented. The Cloud Field Optical Simulator (CFOS) is a laboratory device which utilizes an array of incandescent lamps as a source, simulated clouds made from cotton or styrofoam as targets, and an array of silicon photodiodes as detectors. The device allows virtually any source-target-detector geometry to be examined. Similitude between real clouds and their CFOS cotton or styrofoam counterparts is established by relying on a linear relationship between optical depth and the ratio of reflected to transmitted light for a semiinfinite layer. Comparisons of principal plane radiances observed by the CFOS with Monte Carlo computations for a water cloud at 0.7 micron show excellent agreement. Initial applications of the CFOS are discussed.

Characterization studies of silicon photomultipliers and crystals matrices for a novel time of flight PET detector

NASA Astrophysics Data System (ADS)

Auffray, E.; Ben Mimoun Bel Hadj, F.; Cortinovis, D.; Doroud, K.; Garutti, E.; Lecoq, P.; Liu, Z.; Martinez, R.; Paganoni, M.; Pizzichemi, M.; Silenzi, A.; Xu, C.; Zvolský, M.

2015-06-01

This paper describes the characterization of crystal matrices and silicon photomultiplier arrays for a novel Positron Emission Tomography (PET) detector, namely the external plate of the EndoTOFPET-US system. The EndoTOFPET-US collaboration aims to integrate Time-Of-Flight PET with ultrasound endoscopy in a novel multimodal device, capable to support the development of new biomarkers for prostate and pancreatic tumors. The detector consists in two parts: a PET head mounted on an ultrasound probe and an external PET plate. The challenging goal of 1 mm spatial resolution for the PET image requires a detector with small crystal size, and therefore high channel density: 4096 LYSO crystals individually readout by Silicon Photomultipliers (SiPM) make up the external plate. The quality and properties of these components must be assessed before the assembly. The dark count rate, gain, breakdown voltage and correlated noise of the SiPMs are measured, while the LYSO crystals are evaluated in terms of light yield and energy resolution. In order to effectively reduce the noise in the PET image, high time resolution for the gamma detection is mandatory. The Coincidence Time Resolution (CTR) of all the SiPMs assembled with crystals is measured, and results show a value close to the demanding goal of 200 ps FWHM. The light output is evaluated for every channel for a preliminary detector calibration, showing an average of about 1800 pixels fired on the SiPM for a 511 keV interaction. Finally, the average energy resolution at 511 keV is about 13 %, enough for effective Compton rejection.

First results of a novel Silicon Drift Detector array designed for low energy X-ray fluorescence spectroscopy

NASA Astrophysics Data System (ADS)

Rachevski, Alexandre; Ahangarianabhari, Mahdi; Bellutti, Pierluigi; Bertuccio, Giuseppe; Brigo, Elena; Bufon, Jernej; Carrato, Sergio; Castoldi, Andrea; Cautero, Giuseppe; Fabiani, Sergio; Giacomini, Gabriele; Gianoncelli, Alessandra; Giuressi, Dario; Guazzoni, Chiara; Kourousias, George; Liu, Chang; Menk, Ralf Hendrik; Montemurro, Giuseppe Vito; Picciotto, Antonino; Piemonte, Claudio; Rashevskaya, Irina; Shi, Yongbiao; Stolfa, Andrea; Vacchi, Andrea; Zampa, Gianluigi; Zampa, Nicola; Zorzi, Nicola

2016-07-01

We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 °C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier, is 158 eV FWHM at 5.9 keV and 0 °C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450 μm. The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy, aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline.

Development of a Silicon Drift Detector Array: An X-Ray Fluorescence Spectrometer for Remote Surface Mapping

NASA Technical Reports Server (NTRS)

Gaskin, Jessica A.; Carini, Gabriella A.; Wei, Chen; Elsner, Ronald F.; Kramer, Georgiana; De Geronimo, Gianluigi; Keister, Jeffrey W.; Zheng, Li; Ramsey, Brian D.; Rehak, Pavel;

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romani, R. K.; Brink, P. L.; Cabrera, B.

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE PAGES

Romani, R. K.; Brink, P. L.; Cabrera, B.; ...

2018-01-23

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

NASA Astrophysics Data System (ADS)

Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

2018-01-01

We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Arvind, E-mail: anita@barc.gov.in; Topkar, Anita

In order to improve the gamma discrimination capability for thermal neutron measurements using silicon PIN detectors, a novel approach of use of thin epitaxial silicon PIN detectors was investigated. Thin epitaxial silicon detectors with thickness of 15 µm were developed and their performance was tested with thermal neutrons using {sup 10}B converter. The performance of this detector was compared with the performance of a 300 µm silicon detector. The results of experiments presented in this paper indicate that thin epitaxial silicon detectors can significantly improve γ discrimination for thermal neutron measurements.

Discovery of SiCSi in IRC +10216: A missing link between gas and dust carriers of Si–C bonds

PubMed Central

Cernicharo, J.; McCarthy, M. C.; Gottlieb, C. A.; Agúndez, M.; Velilla Prieto, L.; Baraban, J. H.; Changala, P. B.; Guélin, M.; Kahane, C.; Martin-Drumel, M. A.; Patel, N. A.; Reilly, N. J.; Stanton, J. F.; Quintana-Lacaci, G.; Thorwirth, S.; Young, K. H.

2015-01-01

We report the discovery in space of a disilicon species, SiCSi, from observations between 80 and 350 GHz with the IRAM10 30m radio telescope. Owing to the close coordination between laboratory experiments and astrophysics, 112 lines have now been detected in the carbon-rich star CW Leo. The derived frequencies yield improved rotational and centrifugal distortion constants up to sixth order. From the line profiles and interferometric maps with the Submillimeter Array11, the bulk of the SiCSi emission arises from a region of 6″ in radius. The derived abundance is comparable to that of SiC2. As expected from chemical equilibrium calculations, SiCSi and SiC2 are the most abundant species harboring a Si–C bond in the dust formation zone and certainly both play a key role in the formation of SiC dust grains. PMID:26722621

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

NASA Technical Reports Server (NTRS)

Denis, K. L.; Ali, A.; Appel, J.; Bennett, C. L.; Chang, M. P.; Chuss, D. T.; Colazo, F. A.; Costen, N.; Essinger-Hileman, T.; Hu, R.;

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

NASA Technical Reports Server (NTRS)

Denis, Kevin L.; Aamir, A.; Bennett, C. L.; Chang, M. P.; Chuss, D. T.; Colazo, F. A.; Costen, N.; Essinger-Hileman, T.; Hu, R.; Marriage, T.;

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

Design and evaluation of a SiPM-based large-area detector module for positron emission imaging

NASA Astrophysics Data System (ADS)

Alva-Sánchez, H.; Murrieta-Rodríguez, T.; Calva-Coraza, E.; Martínez-Dávalos, A.; Rodríguez-Villafuerte, M.

2018-03-01

The design and evaluation of a large-area detector module for positron emission imaging applications, is presented. The module features a SensL ArrayC-60035-64P-PCB solid state detector (8×8 array of tileable silicon photomultipliers by SensL, 7.2 mm pitch) covering a total area of 57.4×57.4 mm2. The detector module was formed using a pixelated array of 40×40 lutetium-yttrium oxyorthosilicate (LYSO) scintillator crystal elements with 1.43 mm pitch. A 7 mm thick coupling light guide was used to allow light sharing between adjacent SiPM. A 16-channel symmetric charge division (SCD) readout board was designed to multiplex the number of signals from 64 to 16 (8 columns and 8 rows) and a center-of-gravity algorithm to identify the position. Data acquisition and digitization was accomplished using a custom-made system based on FPGAs boards. Crystal maps were obtained using 18F-positron sources and Voronoi diagrams were used to correct for geometric distortions and to generate a non-uniformity correction matrix. All measurements were taken at a controlled room temperature of 22oC. The crystal maps showed minor distortion, 90% of the 1600 total crystal elements could be identified, a mean peak-to-valley ratio of 4.3 was obtained and a 10.8% mean energy resolution for 511 keV annihilation photons was determined. The performance of the detector using our own readout board was compared to that using two different commercially readout boards using the same detector module arrangement. We show that these large-area SiPM arrays, combined with a 16-channel SCD readout board, can offer high spatial resolution, excellent energy resolution and detector uniformity and thus, can be used for positron emission imaging applications.

Enhancing the spectral response of filled bolometer arrays for submillimeter astronomy.

PubMed

Revéret, Vincent; Rodriguez, Louis; Agnèse, Patrick

2010-12-10

Future missions for astrophysical studies in the submillimeter region will need detectors with very high sensitivity and large fields of view. Bolometer arrays can fulfill these requirements over a very broad band. We describe a technique that enables bolometer arrays that use quarter-wave cavities to have a high spectral response over most of the submillimeter band. This technique is based on the addition on the front of the array of an antireflecting dielectric layer. The optimum parameters (layer thickness and distance to the array) are determined by a 2D analytic code. This general principle is applied to the case of Herschel PACS bolometers (optimized for the 60 to 210 μm band). As an example, we demonstrate experimentally that a PACS array covered by a 138 μm thick silicon layer can improve the spectral response by a factor of 1.7 in the 450 μm band.

Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

NASA Astrophysics Data System (ADS)

Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

2017-11-01

A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.

Comparative investigation of the detective quantum efficiency of direct and indirect conversion detector technologies in dedicated breast CT.

PubMed

Kuttig, Jan D; Steiding, Christian; Kolditz, Daniel; Hupfer, Martin; Karolczak, Marek; Kalender, Willi A

2015-06-01

To investigate the dose saving potential of direct-converting CdTe photon-counting detector technology for dedicated breast CT. We analyzed the modulation transfer function (MTF), the noise power spectrum (NPS) and the detective quantum efficiency (DQE) of two detector technologies, suitable for breast CT (BCT): a flat-panel energy-integrating detector with a 70 μm and a 208 μm thick gadolinium oxysulfide (GOS) and a 150 μm thick cesium iodide (CsI) scintillator and a photon-counting detector with a 1000 μm thick CdTe sensor. The measurements for GOS scintillator thicknesses of 70 μm and 208 μm delivered 10% pre-sampled MTF values of 6.6 mm(-1) and 3.2 mm(-1), and DQE(0) values of 23% and 61%. The 10% pre-sampled MTF value for the 150 μm thick CsI scintillator 6.9 mm(-1), and the DQE(0) value was 49%. The CdTe sensor reached a 10% pre-sampled MTF value of 8.5 mm(-1) and a DQE(0) value of 85%. The photon-counting CdTe detector technology allows for significant dose reduction compared to the energy-integrating scintillation detector technology used in BCT today. Our comparative evaluation indicates that a high potential dose saving may be possible for BCT by using CdTe detectors, without loss of spatial resolution. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Scintillator Detector Development at Central Michigan University

NASA Astrophysics Data System (ADS)

McClain, David; Estrade, Alfredo; Neupane, Shree

2017-09-01

Experimental nuclear physics relies both on the accuracy and precision of the instruments for radiation detection used in experimental setups. At Central Michigan University we have setup a lab to work with scintillator detectors for radioactive ion beam experiments, using a Picosecond Laser and radioactive sources for testing. We have tested the resolution for prototypes of large area scintillators that could be used for fast timing measurements in the focal plane of spectrometers, such as the future High Rigidity Spectrometer at the Facility for Rare Isotope Beams (FRIB). We measured the resolution as a function of the length of the detector, and also the position of the beam along the scintillator. We have also designed a scintillating detector to veto light ion background in beta-decay experiments with the Advanced Implantation Detector Array (AIDA) at RIKEN in Japan. We tested different configurations of Silicon Photomultipliers and scintillating fiber optics to find the best detection efficiency.

A depth-of-interaction PET detector using a stair-shaped reflector arrangement and a single-ended scintillation light readout.

PubMed

Son, Jeong-Whan; Lee, Min Sun; Lee, Jae Sung

2017-01-21

Positron emission tomography (PET) detectors with the ability to encode depth-of-interaction (DOI) information allow us to simultaneously improve the spatial resolution and sensitivity of PET scanners. In this study, we propose a DOI PET detector based on a stair-pattern reflector arrangement inserted between pixelated crystals and a single-ended scintillation light readout. The main advantage of the proposed method is its simplicity; DOI information is decoded from a flood map and the data can be simply acquired by using a single-ended readout system. Another potential advantage is that the two-step DOI detectors can provide the largest peak position distance in a flood map because two-dimensional peak positions can be evenly distributed. We conducted a Monte Carlo simulation and obtained flood maps. Then, we conducted experimental studies using two-step DOI arrays of 5  ×  5 Lu 1.9 Y 0.1 SiO 5 :Ce crystals with a cross-section of 1.7  ×  1.7 mm 2 and different detector configurations: an unpolished single-layer ( U S) array, a polished single-layer ( P S) array and a polished stacked two-layer ( P T) array. For each detector configuration, both air gaps and room-temperature vulcanization (RTV) silicone gaps were tested. Detectors U S and P T showed good peak separation in each scintillator with an average peak-to-valley ratio (PVR) and distance-to-width ratio (DWR) of 2.09 and 1.53, respectively. Detector P S RTV showed lower PVR and DWR (1.65 and 1.34, respectively). The configuration of detector P T Air is preferable for the construction of time-of-flight-DOI detectors because timing resolution was degraded by only about 40 ps compared with that of a non-DOI detector. The performance of detectors U S Air and P S RTV was lower than that of a non-DOI detector, and thus these designs are favorable when the manufacturing cost is more important than timing performance. The results demonstrate that the proposed DOI-encoding method is a promising candidate for PET scanners that require high resolution and sensitivity and operate with conventional acquisition systems.

Photodisintegration reactions for nuclear astrophysics studies at ELI-NP

NASA Astrophysics Data System (ADS)

Matei, C.; Balabanski, D.; Filipescu, D. M.; Tesileanu, O.

2018-01-01

Extreme Light Infrastructure - Nuclear Physics facility will come online in Bucharest-Magurele, Romania, in 2018 and will deliver high intensity laser and brilliant gamma beams. We present the physics cases and instruments proposed at ELI-NP to measure capture reactions by means of the inverse photodisintegration reaction. We propose to study the 16O(γ, α)12C reaction using a Time Projection Chamber detector with electronic readout. Several other reactions, such as 24Mg(γ, α)20Ne and reactions on heavy nuclei relevant in the p-process, are central to stellar evolution and will be investigated with a proposed Silicon Strip Detector array and a 4π neutron detector. The status of the experimental facilities and first-day experiments will be presented in detail.

The Maia Spectroscopy Detector System: Engineering for Integrated Pulse Capture, Low-Latency Scanning and Real-Time Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirkham, R.; Siddons, D.; Dunn, P.A.

2010-06-23

The Maia detector system is engineered for energy dispersive x-ray fluorescence spectroscopy and elemental imaging at photon rates exceeding 10{sup 7}/s, integrated scanning of samples for pixel transit times as small as 50 {micro}s and high definition images of 10{sup 8} pixels and real-time processing of detected events for spectral deconvolution and online display of pure elemental images. The system developed by CSIRO and BNL combines a planar silicon 384 detector array, application-specific integrated circuits for pulse shaping and peak detection and sampling and optical data transmission to an FPGA-based pipelined, parallel processor. This paper describes the system and themore » underpinning engineering solutions.« less

Highly multiplexed signal readout for a time-of-flight positron emission tomography detector based on silicon photomultipliers.

PubMed

Cates, Joshua W; Bieniosek, Matthew F; Levin, Craig S

2017-01-01

Maintaining excellent timing resolution in the generation of silicon photomultiplier (SiPM)-based time-of-flight positron emission tomography (TOF-PET) systems requires a large number of high-speed, high-bandwidth electronic channels and components. To minimize the cost and complexity of a system's back-end architecture and data acquisition, many analog signals are often multiplexed to fewer channels using techniques that encode timing, energy, and position information. With progress in the development SiPMs having lower dark noise, after pulsing, and cross talk along with higher photodetection efficiency, a coincidence timing resolution (CTR) well below 200 ps FWHM is now easily achievable in single pixel, bench-top setups using 20-mm length, lutetium-based inorganic scintillators. However, multiplexing the output of many SiPMs to a single channel will significantly degrade CTR without appropriate signal processing. We test the performance of a PET detector readout concept that multiplexes 16 SiPMs to two channels. One channel provides timing information with fast comparators, and the second channel encodes both position and energy information in a time-over-threshold-based pulse sequence. This multiplexing readout concept was constructed with discrete components to process signals from a [Formula: see text] array of SensL MicroFC-30035 SiPMs coupled to [Formula: see text] Lu 1.8 Gd 0.2 SiO 5 (LGSO):Ce (0.025 mol. %) scintillators. This readout method yielded a calibrated, global energy resolution of 15.3% FWHM at 511 keV with a CTR of [Formula: see text] FWHM between the 16-pixel multiplexed detector array and a [Formula: see text] LGSO-SiPM reference detector. In summary, results indicate this multiplexing scheme is a scalable readout technique that provides excellent coincidence timing performance.

Low Cost, High Performance Avalanche Photodiodes for Enabling High Sensitivity Bio-fluorescence Detection (First Year of a Two-year Program)

DTIC Science & Technology

2011-04-01

nGaNGaNSiCSiC EE   4 When the electric field can punch through into the GaN absorption region, as illustrated in the band diagram in figure 2 (left...cr SiCSiC br GaNGaN EE EE0       SiC b SiC GaN d VE E 0 q(Vbi-Vb) GaN SiC n dSiC dGaN EGaN ESiC q(Vbi-Vb) GaN ndSiC...detector (figure 2, right). cr SiCSiCn br GaNGaN cr SiCSiC EEE   0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EGaN El ec

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pern, F. J.; Glick, S. H.

We have conducted a series of accelerated exposure test (AET) studies for various crystalline-Si (c-Si) and amorphous-Si (a-Si) cell samples that were encapsulated with different superstrates, pottants, and substrates. Nonuniform browning patterns of ethylene vinyl acetate (EVA) pottants were observed for glass/EVA/glass-encapsulated c-Si cell samples under solar simulator exposures at elevated temperatures. The polymer/polymer-configured laminates with Tedlar or Tefzel did not discolor because of photobleaching reactions, but yellowed with polyester or nylon top films. Delamination was observed for the polyester/EVA layers on a-Si minimodules and for a polyolefin-based thermoplastic pottant at high temperatures. For all tested c-Si cell samples, irregularmore » changes in the current-voltage parameters were observed that could not be accounted for simply by the transmittance changes of the superstrate/pottant layers. Silicone-type adhesives used under UV-transmitting polymer top films were observed to cause greater cell current/efficiency loss than EVA or polyethylene pottants.« less

Performance analysis of a CsI-based flat panel detector in a cone beam variable resolution x-ray system

NASA Astrophysics Data System (ADS)

Dahi, Bahram; Keyes, Gary S.; Rendon, David A.; DiBianca, Frank A.

2007-03-01

A new Cone-Beam CT (CBCT) system is introduced that uses the concept of Variable Resolution X-ray (VRX) detection, which has previously been demonstrated to significantly increase spatial resolution for small objects. An amorphous silicon Flat Panel Detector (FPD) with a CsI scintillator (PaxScan 2020, Varian, Salt Lake City, UT) is coupled with a micro-focus x-ray tube (35 - 80 kVp, 10 - 250 μA) to form a CBCT. The FPD is installed on a rotating arm that can be adjusted to any angle θ, called the VRX angle, between 90° and 0° with respect to the x-ray direction. A VRX angle of 90° for the detector corresponds to a conventional CBCT whereas a VRX angle of 30° means that the detector is tilted 90° - 30° = 60° from its perpendicular position. Tilting the FPD in this manner reduces both the line-spread function width and the sampling distance by a factor of sin(θ), thereby increasing detector spatial resolution proportionately. An in-house phantom is used to measure the MTF of the reconstructed CT images using different VRX angles. An increase by a factor of 1.67 +/- 0.007 is observed in the MTF cutoff frequency at 30° compared to 90° in images acquired at 75 kVp. Expected theoretical value for this case is 2.0. The new Cone-Beam Variable Resolution X-ray (CB-VRX) CT system is expected to significantly improve the images acquired from small objects - such as small animals - while exploiting the opportunities offered by a conventional CBCT.

The FAZIA project in Europe: R&D phase

NASA Astrophysics Data System (ADS)

Bougault, R.; Poggi, G.; Barlini, S.; Borderie, B.; Casini, G.; Chbihi, A.; Le Neindre, N.; Pârlog, M.; Pasquali, G.; Piantelli, S.; Sosin, Z.; Ademard, G.; Alba, R.; Anastasio, A.; Barbey, S.; Bardelli, L.; Bini, M.; Boiano, A.; Boisjoli, M.; Bonnet, E.; Borcea, R.; Bougard, B.; Brulin, G.; Bruno, M.; Carboni, S.; Cassese, C.; Cassese, F.; Cinausero, M.; Ciolacu, L.; Cruceru, I.; Cruceru, M.; D'Aquino, B.; De Fazio, B.; Degerlier, M.; Desrues, P.; Di Meo, P.; Dueñas, J. A.; Edelbruck, P.; Energico, S.; Falorsi, M.; Frankland, J. D.; Galichet, E.; Gasior, K.; Gramegna, F.; Giordano, R.; Gruyer, D.; Grzeszczuk, A.; Guerzoni, M.; Hamrita, H.; Huss, C.; Kajetanowicz, M.; Korcyl, K.; Kordyasz, A.; Kozik, T.; Kulig, P.; Lavergne, L.; Legouée, E.; Lopez, O.; Łukasik, J.; Maiolino, C.; Marchi, T.; Marini, P.; Martel, I.; Masone, V.; Meoli, A.; Merrer, Y.; Morelli, L.; Negoita, F.; Olmi, A.; Ordine, A.; Paduano, G.; Pain, C.; Pałka, M.; Passeggio, G.; Pastore, G.; Pawłowski, P.; Petcu, M.; Petrascu, H.; Piasecki, E.; Pontoriere, G.; Rauly, E.; Rivet, M. F.; Rocco, R.; Rosato, E.; Roscilli, L.; Scarlini, E.; Salomon, F.; Santonocito, D.; Seredov, V.; Serra, S.; Sierpowski, D.; Spadaccini, G.; Spitaels, C.; Stefanini, A. A.; Tobia, G.; Tortone, G.; Twaróg, T.; Valdré, S.; Vanzanella, A.; Vanzanella, E.; Vient, E.; Vigilante, M.; Vitiello, G.; Wanlin, E.; Wieloch, A.; Zipper, W.

2014-02-01

The goal of the FAZIA Collaboration is the design of a new-generation 4 π detector array for heavy-ion collisions with radioactive beams. This article summarizes the main results of the R&D phase, devoted to the search for significant improvements of the techniques for charge and mass identification of reaction products. This was obtained by means of a systematic study of the basic detection module, consisting of two transmission-mounted silicon detectors followed by a CsI(Tl) scintillator. Significant improvements in ΔE- E and pulse-shape techniques were obtained by controlling the doping homogeneity and the cutting angles of silicon and by putting severe constraints on thickness uniformity. Purposely designed digital electronics contributed to identification quality. The issue of possible degradation related to radiation damage of silicon was also addressed. The experimental activity was accompanied by studies on the physics governing signal evolution in silicon. The good identification quality obtained with the prototypes during the R&D phase, allowed us to investigate also some aspects of isospin physics, namely isospin transport and odd-even staggering. Now, after the conclusion of the R&D period, the FAZIA Collaboration has entered the demonstrator phase, with the aim of verifying the applicability of the devised solutions for the realization of a larger-scale experimental set-up.

Characterizing Subpixel Spatial Resolution of a Hybrid CMOS Detector

NASA Astrophysics Data System (ADS)

Bray, Evan; Burrows, Dave; Chattopadhyay, Tanmoy; Falcone, Abraham; Hull, Samuel; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

The detection of X-rays is a unique process relative to other wavelengths, and allows for some novel features that increase the scientific yield of a single observation. Unlike lower photon energies, X-rays liberate a large number of electrons from the silicon absorber array of the detector. This number is usually on the order of several hundred to a thousand for moderate-energy X-rays. These electrons tend to diffuse outward into what is referred to as the charge cloud. This cloud can then be picked up by several pixels, forming a specific pattern based on the exact incident location. By conducting the first ever “mesh experiment" on a hybrid CMOS detector (HCD), we have experimentally determined the charge cloud shape and used it to characterize responsivity of the detector with subpixel spatial resolution.

Energy resolution of the CdTe-XPAD detector: calibration and potential for Laue diffraction measurements on protein crystals.

PubMed

Medjoubi, Kadda; Thompson, Andrew; Bérar, Jean-François; Clemens, Jean-Claude; Delpierre, Pierre; Da Silva, Paulo; Dinkespiler, Bernard; Fourme, Roger; Gourhant, Patrick; Guimaraes, Beatriz; Hustache, Stéphanie; Idir, Mourad; Itié, Jean-Paul; Legrand, Pierre; Menneglier, Claude; Mercere, Pascal; Picca, Frederic; Samama, Jean-Pierre

2012-05-01

The XPAD3S-CdTe, a CdTe photon-counting pixel array detector, has been used to measure the energy and the intensity of the white-beam diffraction from a lysozyme crystal. A method was developed to calibrate the detector in terms of energy, allowing incident photon energy measurement to high resolution (approximately 140 eV), opening up new possibilities in energy-resolved X-ray diffraction. In order to demonstrate this, Laue diffraction experiments were performed on the bending-magnet beamline METROLOGIE at Synchrotron SOLEIL. The X-ray energy spectra of diffracted spots were deduced from the indexed Laue patterns collected with an imaging-plate detector and then measured with both the XPAD3S-CdTe and the XPAD3S-Si, a silicon photon-counting pixel array detector. The predicted and measured energy of selected diffraction spots are in good agreement, demonstrating the reliability of the calibration method. These results open up the way to direct unit-cell parameter determination and the measurement of high-quality Laue data even at low resolution. Based on the success of these measurements, potential applications in X-ray diffraction opened up by this type of technology are discussed.

Modularized compact positron emission tomography detector for rapid system development

PubMed Central

Xi, Daoming; Liu, Xiang; Zeng, Chen; Liu, Wei; Li, Yanzhao; Hua, Yuexuan; Mei, Xiongze; Kim, Heejong; Xiao, Peng; Kao, Chien-Min; Xie, Qingguo

2016-01-01

Abstract. We report the development of a modularized compact positron emission tomography (PET) detector that outputs serial streams of digital samples of PET event pulses via an Ethernet interface using the UDP/IP protocol to enable rapid configuration of a PET system by connecting multiple such detectors via a network switch to a computer. Presently, the detector is 76  mm×50  mm×55  mm in extent (excluding I/O connectors) and contains an 18×12 array of 4.2×4.2×20  mm3 one-to-one coupled lutetium-yttrium oxyorthosilicate/silicon photomultiplier pixels. It employs cross-wire and stripline readouts to merge the outputs of the 216 detector pixels to 24 channels. Signals at these channels are sampled using a built-in 24-ch, 4-level field programmable gate arrays-only multivoltage threshold digitizer. In the computer, software programs are implemented to analyze the digital samples to extract event information and to perform energy qualification and coincidence filtering. We have developed two such detectors. We show that all their pixels can be accurately discriminated and measure a crystal-level energy resolution of 14.4% to 19.4% and a detector-level coincidence time resolution of 1.67 ns FWHM. Preliminary imaging results suggests that a PET system based on the detectors can achieve an image resolution of ∼1.6  mm. PMID:28018941

Analytical expressions for noise and crosstalk voltages of the High Energy Silicon Particle Detector

NASA Astrophysics Data System (ADS)

Yadav, I.; Shrimali, H.; Liberali, V.; Andreazza, A.

2018-01-01

The paper presents design and implementation of a silicon particle detector array with the derived closed form equations of signal-to-noise ratio (SNR) and crosstalk voltages. The noise analysis demonstrates the effect of interpixel capacitances (IPC) between center pixel (where particle hits) and its neighbouring pixels, resulting as a capacitive crosstalk. The pixel array has been designed and simulated in a 180 nm BCD technology of STMicroelectronics. The technology uses the supply voltage (VDD) of 1.8 V and the substrate potential of -50 V. The area of unit pixel is 250×50 μm2 with the substrate resistivity of 125 Ωcm and the depletion depth of 30 μm. The mathematical model includes the effects of various types of noise viz. the shot noise, flicker noise, thermal noise and the capacitive crosstalk. This work compares the results of noise and crosstalk analysis from the proposed mathematical model with the circuit simulation results for a given simulation environment. The results show excellent agreement with the circuit simulations and the mathematical model. The average relative error (AVR) generated for the noise spectral densities with respect to the simulations and the model is 12% whereas the comparison gives the errors of 3% and 11.5% for the crosstalk voltages and the SNR results respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrummore » of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.« less

Shell Evolution towards 78Ni: Low-Lying States in 77Cu

NASA Astrophysics Data System (ADS)

Sahin, E.; Bello Garrote, F. L.; Tsunoda, Y.; Otsuka, T.; de Angelis, G.; Görgen, A.; Niikura, M.; Nishimura, S.; Xu, Z. Y.; Baba, H.; Browne, F.; Delattre, M.-C.; Doornenbal, P.; Franchoo, S.; Gey, G.; Hadyńska-KlÈ©k, K.; Isobe, T.; John, P. R.; Jung, H. S.; Kojouharov, I.; Kubo, T.; Kurz, N.; Li, Z.; Lorusso, G.; Matea, I.; Matsui, K.; Mengoni, D.; Morfouace, P.; Napoli, D. R.; Naqvi, F.; Nishibata, H.; Odahara, A.; Sakurai, H.; Schaffner, H.; Söderström, P.-A.; Sohler, D.; Stefan, I. G.; Sumikama, T.; Suzuki, D.; Taniuchi, R.; Taprogge, J.; Vajta, Z.; Watanabe, H.; Werner, V.; Wu, J.; Yagi, A.; Yalcinkaya, M.; Yoshinaga, K.

2017-06-01

The level structure of the neutron-rich 77Cu nucleus is investigated through β -delayed γ -ray spectroscopy at the Radioactive Isotope Beam Factory of the RIKEN Nishina Center. Ions of 77Ni are produced by in-flight fission, separated and identified in the BigRIPS fragment separator, and implanted in the WAS3ABi silicon detector array, surrounded by Ge cluster detectors of the EURICA array. A large number of excited states in 77Cu are identified for the first time by correlating γ rays with the β decay of 77Ni, and a level scheme is constructed by utilizing their coincidence relationships. The good agreement between large-scale Monte Carlo shell model calculations and experimental results allows for the evaluation of the single-particle structure near 78Ni and suggests a single-particle nature for both the 5 /21- and 3 /21- states in 77Cu, leading to doubly magic 78Ni.

Design, status and perspective of the Mu2e crystal calorimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pezzullo, G.; Atanov, N.; Baranov, V.

The Mu2e experiment at Fermilab will search for the charged lepton flavor violating process of neutrino-lessmore » $$\\mu \\to e$$ coherent conversion in the field of an aluminum nucleus. Mu2e will reach a single event sensitivity of about $$2.5\\cdot 10^{-17}$$ that corresponds to four orders of magnitude improvements with respect to the current best limit. The detector system consists of a straw tube tracker and a crystal calorimeter made of undoped CsI coupled with Silicon Photomultipliers. The calorimeter was designed to be operable in a harsh environment where about 10 krad/year will be delivered in the hottest region and work in presence of 1 T magnetic field. The calorimeter role is to perform $$\\mu$$/e separation to suppress cosmic muons mimiking the signal, while providing a high level trigger and a seeding the track search in the tracker. Here, in this paper we present the calorimeter design and the latest R&D results.« less

Study of the Residual Background Events in Ground Data from the ASTRO-HSXS Microcalorimeter

NASA Technical Reports Server (NTRS)

Kilbourne, Caroline A.; Boyce, Kevin R.; Chiao, M. P.; Eckart, M. E.; Kelley, R. L.; Leutenegger, M. A.; Porter, F. S.; Watanabe, T.; Ishisaki, Y.; Yamada, S.;

Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

NASA Astrophysics Data System (ADS)

Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

2018-04-01

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE PAGES

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.; ...

2017-09-21

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

An overview of crystalline silicon solar cell technology: Past, present, and future

NASA Astrophysics Data System (ADS)

Sopian, K.; Cheow, S. L.; Zaidi, S. H.

2017-09-01

Crystalline silicon (c-Si) solar cell, ever since its inception, has been identified as the only economically and environmentally sustainable renewable resource to replace fossil fuels. Performance c-Si based photovoltaic (PV) technology has been equal to the task. Its price has been reduced by a factor of 250 over last twenty years (from ˜ 76 USD to ˜ 0.3 USD); its market growth is expected to reach 100 GWP by 2020. Unfortunately, it is still 3-4 times higher than carbon-based fuels. With the matured PV manufacturing technology as it exists today, continuing price reduction poses stiff challenges. Alternate manufacturing approaches in combination with thin wafers, low (< 10 x) optical enhancement with Fresnel lenses, band-gap engineering for enhanced optical absorption, and newer, advanced solar cell configurations including partially transparent bifacial and back contact solar cells will be required. This paper will present a detailed, cost-based analysis of advanced solar cell manufacturing technologies aimed at higher (˜ 22 %) efficiency with existing equipment and processes.

The Light-Induced Field-Effect Solar Cell Concept - Perovskite Nanoparticle Coating Introduces Polarization Enhancing Silicon Cell Efficiency.

PubMed

Wang, Yusheng; Xia, Zhouhui; Liu, Lijia; Xu, Weidong; Yuan, Zhongcheng; Zhang, Yupeng; Sirringhaus, Henning; Lifshitz, Yeshayahu; Lee, Shui-Tong; Bao, Qiaoliang; Sun, Baoquan

2017-05-01

Solar cell generates electrical energy from light one via pulling excited carrier away under built-in asymmetry. Doped semiconductor with antireflection layer is general strategy to achieve this including crystalline silicon (c-Si) solar cell. However, loss of extra energy beyond band gap and light reflection in particular wavelength range is known to hinder the efficiency of c-Si cell. Here, it is found that part of short wavelength sunlight can be converted into polarization electrical field, which strengthens asymmetry in organic-c-Si heterojunction solar cell through molecule alignment process. The light harvested by organometal trihalide perovskite nanoparticles (NPs) induces molecular alignment on a conducting polymer, which generates positive electrical surface field. Furthermore, a "field-effect solar cell" is successfully developed and implemented by combining perovskite NPs with organic/c-Si heterojunction associating with light-induced molecule alignment, which achieves an efficiency of 14.3%. In comparison, the device with the analogous structure without perovskite NPs only exhibits an efficiency of 12.7%. This finding provides a novel concept to design solar cell by sacrificing part of sunlight to provide "extra" asymmetrical field continuously as to drive photogenerated carrier toward respective contacts under direct sunlight. Moreover, it also points out a method to combine promising perovskite material with c-Si solar cell. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tailored Voltage Waveforms in an SF6 /O2 discharge: slope asymmetry and its effect on surface nanotexturing of silicon

NASA Astrophysics Data System (ADS)

Fischer, G.; Drahi, E.; Poulain, G.; Bruneau, B.; Johnson, E. V.

2016-09-01

The nanotexturing of the surface of a crystalline silicon (c-Si) wafer for improved photovoltaic performance can be achieved through the use of a SF6 /O2 capacitively coupled reactive ion etching plasma. In this study, we attempt to modify the texturing conditions by taking advantage of slope asymmetries of Tailored Voltage Waveform (TVW) excitation. We show that TVW shapes resembling ``sawtooths'', presenting a large slope asymmetry, induce high ionization asymmetries in the discharge, and that the dominance of this effect strongly depends on both gas mixture and pressure. These asymmetries have been previously observed in other electronegative gas and are due to differing plasma sheath dynamics at powered and grounded electrode in a discharge operating in drift-ambipolar mode. The texturing of c-Si in SF6 /O2 occurs through competing mechanisms, including etching by fluorine radicals and in-situ deposition of micro-masking species. The relative fluxes of etching and passivating species are expected to be strongly varied due to the plasma asymmetry. Morphological and optical characterization of textured c-Si surfaces will give more insight into both the plasma properties and the mechanisms involved in dry nanotexturing. This project has been supported by the French Government in the frame of the program of investment for the future (Programme d'Investissement d'Avenir - ANR-IEED-002-01).

Observation and experimental investigation of confinement effects on ion transport and electrokinetic flows at the microscale

PubMed Central

Benneker, Anne M.; Wood, Jeffery A.; Tsai, Peichun A.; Lammertink, Rob G. H.

2016-01-01

Electrokinetic effects adjacent to charge-selective interfaces (CSI) have been experimentally investigated in microfluidic platforms in order to gain understanding on underlying phenomena of ion transport at elevated applied voltages. We experimentally investigate the influence of geometry and multiple array densities of the CSI on concentration and flow profiles in a microfluidic set-up using nanochannels as the CSI. Particle tracking obtained under chronoamperometric measurements show the development of vortices in the microchannel adjacent to the nanochannels. We found that the direction of the electric field and the potential drop inside the microchannel has a large influence on the ion transport through the interface, for example by inducing immediate wall electroosmotic flow. In microfluidic devices, the electric field may not be directed normal to the interface, which can result in an inefficient use of the CSI. Multiple vortices are observed adjacent to the CSI, growing in size and velocity as a function of time and dependent on their location in the microfluidic device. Local velocities inside the vortices are measured to be more than 1.5 mm/s. Vortex speed, as well as flow speed in the channel, are dependent on the geometry of the CSI and the distance from the electrode. PMID:27853257

Prototype readout electronics and silicon strip detector study for the silicon tracking system at compressed baryonic matter experiment

NASA Astrophysics Data System (ADS)

Kasiński, Krzysztof; Szczygieł, Robert; Gryboś, Paweł

2011-10-01

This paper presents the prototype detector readout electronics for the STS (Silicon Tracking System) at CBM (Compressed Baryonic Matter) experiment at FAIR, GSI (Helmholtzzentrum fuer Schwerionenforschung GmbH) in Germany. The emphasis has been put on the strip detector readout chip and its interconnectivity with detector. Paper discusses the impact of the silicon strip detector and interconnection cable construction on the overall noise of the system and architecture of the TOT02 readout ASIC. The idea and problems of the double-sided silicon detector usage are also presented.

Recent progress in infrared detector technologies

NASA Astrophysics Data System (ADS)

Rogalski, A.

2011-05-01

In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VO x) or amorphous silicon (α-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement. Attractive alternatives consist of low-resistance α-SiGe monocrystalline SiGe quantum wells or quantum dots. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in MEMS systems have lead to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Albion: the UK 3rd generation high-performance thermal imaging programme

NASA Astrophysics Data System (ADS)

McEwen, R. K.; Lupton, M.; Lawrence, M.; Knowles, P.; Wilson, M.; Dennis, P. N. J.; Gordon, N. T.; Lees, D. J.; Parsons, J. F.

2007-04-01

The first generation of high performance thermal imaging sensors in the UK was based on two axis opto-mechanical scanning systems and small (4-16 element) arrays of the SPRITE detector, developed during the 1970s. Almost two decades later, a 2nd Generation system, STAIRS C was introduced, based on single axis scanning and a long linear array of approximately 3000 elements. The UK has now begun the industrialisation of 3 rd Generation High Performance Thermal Imaging under a programme known as "Albion". Three new high performance cadmium mercury telluride arrays are being manufactured. The CMT material is grown by MOVPE on low cost substrates and bump bonded to the silicon read out circuit (ROIC). To maintain low production costs, all three detectors are designed to fit with existing standard Integrated Detector Cooling Assemblies (IDCAs). The two largest focal planes are conventional devices operating in the MWIR and LWIR spectral bands. A smaller format LWIR device is also described which has a smart ROIC, enabling much longer stare times than are feasible with conventional pixel circuits, thus achieving very high sensitivity. A new reference surface technology for thermal imaging sensors is described, based on Negative Luminescence (NL), which offers several advantages over conventional peltier references, improving the quality of the Non-Uniformity Correction (NUC) algorithms.

A flexible scintillation light apparatus for rare events searches

NASA Astrophysics Data System (ADS)

Gironi, L.; Baldazzi, G.; Bonvicini, V.; Campana, R.; Capelli, S.; Evangelista, Y.; Fasoli, M.; Feroci, M.; Fuschino, F.; Labanti, C.; Marisaldi, M.; Previtali, E.; Riganese, L.; Rashevsky, A.; Sisti, M.; Vacchi, A.; Vedda, A.; Zampa, G.; Zampa, N.; Zuffa, M.

2016-05-01

FLARES (a Flexible scintillation Light Apparatus for Rare Event Searches) is a project for an innovative detector technology to be applied to rare event searches, and in particular to neutrinoless double beta decay experiments. Its novelty is the enhancement and optimization of the collection of the scintillation light emitted by ultra-pure crystals through the use of arrays of high performance silicon photodetectors cooled to 120 K. This would provide scintillation detectors with ~1% level energy resolution, with the advantages of a technology offering relatively simple low cost mass scalability and powerful background reduction handles, as requested by future neutrinoless double beta decay experimental programs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbosa, F.; Somov, A. S.; Somov, S. V.

Here, silicon photomultipliers (SiPMs) are used in detectors of the GlueX experiment devoted to studying the nature of confinement. These detectors are operable at counting rates as high as 2 MHz with a time resolution (FWHM) of approximately 0.3 ns and a number of excited pixels of up to 10 4. For SiPMs that operate under these conditions, the measured dependences of the recovery time and the time resolution are presented as functions of the number of excited pixels and the excitation frequency. Using a picosecond laser, the time resolution has been measured for an array of 4 × 4more » SiPMs, which was specially developed for the experiment.« less

Earth Observing-1 Advanced Land Imager: Radiometric Response Calibration

NASA Technical Reports Server (NTRS)

Mendenhall, J. A.; Lencioni, D. E.; Evans, J. B.

2000-01-01

The Advanced Land Imager (ALI) is one of three instruments to be flown on the first Earth Observing mission (EO-1) under NASA's New Millennium Program (NMP). ALI contains a number of innovative features, including a wide field of view optical design, compact multispectral focal plane arrays, non-cryogenic HgCdTe detectors for the short wave infrared bands, and silicon carbide optics. This document outlines the techniques adopted during ground calibration of the radiometric response of the Advanced Land Imager. Results from system level measurements of the instrument response, signal-to-noise ratio, saturation radiance, and dynamic range for all detectors of every spectral band are also presented.

Developing the (d,p γ) reaction as a surrogate for (n, γ) in inverse kinematics

NASA Astrophysics Data System (ADS)

Lepailleur, Alexandre; Baugher, Travis; Cizewski, Jolie; Ratkiewicz, Andrew; Walter, David; Pain, Steven; Smith, Karl; Garland, Heather; Goddess Collaboration

2016-09-01

The r-process that proceeds via (n, γ) reactions on neutron-rich nuclei is responsible for the synthesis of about half of the elements heavier than iron. Because (n, γ) measurements on short-lived isotopes are not possible, the (d,p γ) reaction is being investigated as a surrogate for (n, γ). Of particular importance is validating a surrogate in inverse kinematics. Therefore, the 95Mo(d,p γ) reaction was measured in inverse kinematics with stable beams from ATLAS and CD2 targets. Reaction protons were measured in coincidence with gamma rays with GODDESS - Gammasphere ORRUBA: Dual Detectors for Experimental Structure Studies. The Oak Ridge Rutgers University Barrel Array (ORRUBA) of position-sensitive silicon strip detectors was augmented with annular arrays of segmented strip detectors at backward and forward angles, resulting in a high-angular coverage for light ejectiles. Preliminary results from the 95Mo(d,p γ) study will be presented. This work was supported in part by the U.S. Department of Energy and National Science Foundation.

Analysis of periodically patterned metallic nanostructures for infrared absorber

NASA Astrophysics Data System (ADS)

Peng, Sha; Yuan, Ying; Long, Huabao; Liu, Runhan; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

With rapid advancement of infrared detecting technology in both military and civil domains, the photo-electronic performances of near-infrared detectors have been widely concerned. Currently, near-infrared detectors demonstrate some problems such as low sensitivity, low detectivity, and relatively small array scale. The current studies show that surface plasmons (SPs) stimulated over the surface of metallic nanostructures by incident light can be used to break the diffraction limit and thus concentrate light into sub-wavelength scale, so as to indicate a method to develop a new type of infrared absorber or detector with very large array. In this paper, we present the design and characterization of periodically patterned metallic nanostructures that combine nanometer thickness aluminum film with silicon wafer. Numerical computations show that there are some valleys caused by surface plasmons in the reflection spectrum in the infrared region, and both red shift and blue shift of the reflection spectrum were observed through changing the nanostructural parameters such as angle α and diameters D. Moreover, the strong E-field intensity is located at the sharp corner of the nano-structures.

A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications

PubMed Central

Wang, Qiang; Wen, Jie; Ravindranath, Bosky; O’Sullivan, Andrew W.; Catherall, David; Li, Ke; Wei, Shouyi; Komarov, Sergey; Tai, Yuan-Chuan

2015-01-01

Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC’s active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4 × 4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16 × 16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92 × 0.92 × 3 mm3 with 1.0 mm pitch. The outer diameter of the detector block is 16.8 × 16.8 mm2. Thirty-two such blocks will be arranged in a 4 × 8 array with 1 mm gaps to form a panel detector with detection area around 7 cm × 14 cm in the full-size detector. The flood histogram acquired with Ge-68 source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module’s mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, +/−0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules. PMID:26085702

Active pixel sensor array as a detector for electron microscopy.

PubMed

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

Refractive index-based detection of gradient elution liquid chromatography using chip-integrated microring resonator arrays.

PubMed

Wade, James H; Bailey, Ryan C

2014-01-07

Refractive index-based sensors offer attractive characteristics as nondestructive and universal detectors for liquid chromatographic separations, but a small dynamic range and sensitivity to minor thermal perturbations limit the utility of commercial RI detectors for many potential applications, especially those requiring the use of gradient elutions. As such, RI detectors find use almost exclusively in sample abundant, isocratic separations when interfaced with high-performance liquid chromatography. Silicon photonic microring resonators are refractive index-sensitive optical devices that feature good sensitivity and tremendous dynamic range. The large dynamic range of microring resonators allows the sensors to function across a wide spectrum of refractive indices, such as that encountered when moving from an aqueous to organic mobile phase during a gradient elution, a key analytical advantage not supported in commercial RI detectors. Microrings are easily configured into sensor arrays, and chip-integrated control microrings enable real-time corrections of thermal drift. Thermal controls allow for analyses at any temperature and, in the absence of rigorous temperature control, obviates extended detector equilibration wait times. Herein, proof of concept isocratic and gradient elution separations were performed using well-characterized model analytes (e.g., caffeine, ibuprofen) in both neat buffer and more complex sample matrices. These experiments demonstrate the ability of microring arrays to perform isocratic and gradient elutions under ambient conditions, avoiding two major limitations of commercial RI-based detectors and maintaining comparable bulk RI sensitivity. Further benefit may be realized in the future through selective surface functionalization to impart degrees of postcolumn (bio)molecular specificity at the detection phase of a separation. The chip-based and microscale nature of microring resonators also make it an attractive potential detection technology that could be integrated within lab-on-a-chip and microfluidic separation devices.

Terahertz Array Receivers with Integrated Antennas

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro;

Fabrication and characterization of multi-stopband Fabry-Pérot filter array for nanospectrometers in the VIS range using SCIL nanoimprint technology

NASA Astrophysics Data System (ADS)

Shen, Yannan; Istock, André; Zaman, Anik; Woidt, Carsten; Hillmer, Hartmut

2018-05-01

Miniaturization of optical spectrometers can be achieved by Fabry-Pérot (FP) filter arrays. Each FP filter consists of two parallel highly reflecting mirrors and a resonance cavity in between. Originating from different individual cavity heights, each filter transmits a narrow spectral band (transmission line) with different wavelengths. Considering the fabrication efficiency, plasma enhanced chemical vapor deposition (PECVD) technology is applied to implement the high-optical-quality distributed Bragg reflectors (DBRs), while substrate conformal imprint lithography (one type of nanoimprint technology) is utilized to achieve the multiple cavities in just a single step. The FP filter array fabricated by nanoimprint combined with corresponding detector array builds a so-called "nanospectrometer". However, the silicon nitride and silicon dioxide stacks deposited by PECVD result in a limited stopband width of DBR (i.e., < 100 nm), which then limits the sensing range of filter arrays. However, an extension of the spectral range of filter arrays is desired and the topic of this investigation. In this work, multiple DBRs with different central wavelengths (λ c) are structured, deposited, and combined on a single substrate to enlarge the entire stopband. Cavity arrays are successfully aligned and imprinted over such terrace like surface in a single step. With this method, small chip size of filter arrays can be preserved, and the fabrication procedure of multiple resonance cavities is kept efficient as well. The detecting range of filter arrays is increased from roughly 50 nm with single DBR to 163 nm with three different DBRs.

Hard x-ray and gamma-ray imaging and spectroscopy using scintillators coupled to silicon drift detectors

NASA Astrophysics Data System (ADS)

Lechner, P.; Eckhard, R.; Fiorini, C.; Gola, A.; Longoni, A.; Niculae, A.; Peloso, R.; Soltau, H.; Strüder, L.

2008-07-01

Silicon Drift Detectors (SDDs) are used as low-capacitance photon detectors for the optical light emitted by scintillators. The scintillator crystal is directly coupled to the SDD entrance window. The entrance window's transmittance can be optimized for the scintillator characteristic by deposition of a wavelength-selective anti-reflective coating. Compared to conventional photomultiplier tubes the SDD readout offers improved energy resolution and avoids the practical problems of incompatibility with magnetic fields, instrument volume and requirement of high voltage. A compact imaging spectrometer for hard X-rays and γ-rays has been developed by coupling a large area (29 × 26 mm2) monolithic SDD array with 77 hexagonal cells to a single non-structured CsI-scintillator of equal size. The scintillation light generated by the absorption of an energetic photon is seen by a number of detector cells and the position of the photon interaction is reconstructed by the centroid method. The measured spatial resolution of the system (<= 500 μm) is considerably smaller than the SDD cell size (3.2 mm) and in the order required at the focal plane of high energy missions. The energy information is obtained by summing the detector cell signals. Compared to direct converting pixelated detectors, e.g. CdTe with equal position resolution the scintillator-SDD combination requires a considerably lower number of readout channels. In addition it has the advantages of comprehensive material experience, existing technologies, proven long term stability, and practically unlimited availability of high quality material.

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

Spectral anomaly methods for aerial detection using KUT nuisance rejection

NASA Astrophysics Data System (ADS)

Detwiler, R. S.; Pfund, D. M.; Myjak, M. J.; Kulisek, J. A.; Seifert, C. E.

2015-06-01

This work discusses the application and optimization of a spectral anomaly method for the real-time detection of gamma radiation sources from an aerial helicopter platform. Aerial detection presents several key challenges over ground-based detection. For one, larger and more rapid background fluctuations are typical due to higher speeds, larger field of view, and geographically induced background changes. As well, the possible large altitude or stand-off distance variations cause significant steps in background count rate as well as spectral changes due to increased gamma-ray scatter with detection at higher altitudes. The work here details the adaptation and optimization of the PNNL-developed algorithm Nuisance-Rejecting Spectral Comparison Ratios for Anomaly Detection (NSCRAD), a spectral anomaly method previously developed for ground-based applications, for an aerial platform. The algorithm has been optimized for two multi-detector systems; a NaI(Tl)-detector-based system and a CsI detector array. The optimization here details the adaptation of the spectral windows for a particular set of target sources to aerial detection and the tailoring for the specific detectors. As well, the methodology and results for background rejection methods optimized for the aerial gamma-ray detection using Potassium, Uranium and Thorium (KUT) nuisance rejection are shown. Results indicate that use of a realistic KUT nuisance rejection may eliminate metric rises due to background magnitude and spectral steps encountered in aerial detection due to altitude changes and geographically induced steps such as at land-water interfaces.

SU-E-T-163: Characterization of a Novel High Resolution 1D Silicon Monolithic Array for Small Field Commissioning and Quality Assurance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bisello, F; IBA Dosimetry, Schwarzenbruck, DE; McGlade, J

2015-06-15

Purpose: To study the suitability of a novel 1D silicon monolithic array for dosimetry of small radiation fields and for QA of high dose gradient treatment modalities (IMRT and SBRT). Methods: A 1D array composed of 4 monolithic silicon modules of 64 mm length and 1 mm pixel pitch was developed by IBA Dosimetry. Measurements were carried out for 6MV and 15MV photons on two commercial different linacs (TrueBeam and Clinac iX, Varian Medical Systems, Palo Alto, CA) and for a CyberKnife G4 (Accuray Inc., Sunnyvale, CA). The 1D array was used to measure output factors (OF), profiles and offmore » axis correction factors (OACF) for the Iris CyberKnife variable collimator (5–60 mm). In addition, dose profiles (at the isocenter plane) were measured for multiple IMRT and SBRT treatment plans and compared with those obtained using EDR2radiographic film (Carestream Health, Rochester NY), a commercial 2D diode array and with the dose distribution calculated using a commercial TPS (Eclipse, Varian Medical Systems, Palo Alto, CA). Results: Due to the small pixel pitch of the detector, IMRT and SBRT plan profiles deviate from film measurements by less than 2%. Similarly, the 1D array exhibits better performance than the 2D diode array due to the larger (7 mm) pitch of that device. Iris collimator OFs measured using the 1D silicon array are in good agreement with the commissioning values obtained using a commercial stereotactic diode as well as with published data. Maximum deviations are < 3% for the smallest field (5 and 7.5mm) and below 1% for all other dimensions. Conclusion: We have demonstrated good performances of the array for commissioning of small photon fields and in patient QA, compared with diodes and film typically used in these clinical applications. The technology compares favorably with existing commercial solutions The presenting author is founded by a Marie Curie Early Initial Training Network Fellowship of the European Communitys Seventh Framework Programme under contract number (PITN-GA-2011-289198-ARDENT). The research activity is hosted by IBA Dosimetry, Gmbh.« less

Concept Doped-Silicon Thermopile Detectors for Future Planetary Thermal Imaging Instruments

NASA Astrophysics Data System (ADS)

Lakew, Brook; Barrentine, Emily M.; Aslam, Shahid; Brown, Ari D.

2016-10-01

Presently, uncooled thermopiles are the detectors of choice for thermal mapping in the 4.6-100 μm spectral range. Although cooled detectors like Ge or Si thermistor bolometers, and MgB2 or YBCO superconducting bolometers, have much higher sensitivity, the required active or passive cooling mechanisms add prohibitive cost and mass for long duration missions. Other uncooled detectors, likepyroelectrics, require a motor mechanism to chop against a known reference temperature, which adds unnecessary mission risk. Uncooled vanadium oxide or amorphous Si microbolometer arrays with integrated CMOS readout circuits, not only have lower sensitivity, but also have not been proven to be radiation hard >100 krad (Si) total ionizing dose, and barring additional materials and readout development, their performance has reached a plateau.Uncooled and radiation hard thermopiles with D* ~1x109 cm√Hz/W and time constant τ ~100 ms have been integrated into thermal imaging instruments on several past missions and have extensive flight heritage (Mariner, Voyager, Cassini, LRO, MRO). Thermopile arrays are also on the MERTIS instrument payload on-board the soon to be launched BepiColombo Mission.To date, thermopiles used for spaceflight instrumentation have consisted of either hand assembled "one-off" single thermopile pixels or COTS thermopile pixel arrays both using Bi-Sb or Bi-Te thermoelectric materials. For future high performance imagers, thermal detector arrays with higher D*, lower τ, and high efficiency delineated absorbers are desirable. Existing COTS and other flight thermopile designs require highly specialized and nonstandard processing techniques to fabricate both the Bi-Sb or Bi-Te thermocouples and the gold or silver black absorbers, which put limitations on further development.Our detector arrays will have a D* ≥ 3x109 cm√Hz/W and a thermal time constant ≤ 30 ms at 170 K. They will be produced using proven, standard semiconductor and MEMS fabrication techniques, which will enable the future integration of other ancillary structures like high efficiency broadband absorbers, which will result in D* ≥ 5x109 cm√Hz/W.

The High Momentum Particle IDentification (HMPID) detector PID performance and its contribution to the ALICE physics program

NASA Astrophysics Data System (ADS)

Volpe, Giacomo; ALICE Collaboration

2017-12-01

The ALICE apparatus is dedicated to study the properties of strongly interacting matter under extremely high temperature and energy density conditions. For this, enhanced particle identification (PID) capabilities are required. Among the PID ALICE detectors, the ALICE-HMPID (High Momentum Particle IDentification) detector is devoted to the identification of charged hadrons, exploiting the Cherenkov effect. It consists of seven identical RICH modules, with liquid C6F14 as Cherenkov radiator (n ≈1.298 at λ=175 nm). Photon and charged particle detection is performed by a MWPC, coupled with a pad segmented CsI coated photo-cathode. The total CsI active area is 10.3 m2. The HMPID provides 3 sigma separation for pions and kaons up to pT = 3 GeV / c and for kaons and (anti-)protons up to pT = 5 GeV / c . A review of the HMPID PID performance, in particular in the challenging central Pb-Pb collisions, and its contribution to the ALICE physics program, using the LHC RUN1 (2010-2013) and RUN2 (2015) data, are presented.

Multiple Frequency Contrast Source Inversion Method for Vertical Electromagnetic Profiling: 2D Simulation Results and Analyses

NASA Astrophysics Data System (ADS)

Li, Jinghe; Song, Linping; Liu, Qing Huo

2016-02-01

A simultaneous multiple frequency contrast source inversion (CSI) method is applied to reconstructing hydrocarbon reservoir targets in a complex multilayered medium in two dimensions. It simulates the effects of a salt dome sedimentary formation in the context of reservoir monitoring. In this method, the stabilized biconjugate-gradient fast Fourier transform (BCGS-FFT) algorithm is applied as a fast solver for the 2D volume integral equation for the forward computation. The inversion technique with CSI combines the efficient FFT algorithm to speed up the matrix-vector multiplication and the stable convergence of the simultaneous multiple frequency CSI in the iteration process. As a result, this method is capable of making quantitative conductivity image reconstruction effectively for large-scale electromagnetic oil exploration problems, including the vertical electromagnetic profiling (VEP) survey investigated here. A number of numerical examples have been demonstrated to validate the effectiveness and capacity of the simultaneous multiple frequency CSI method for a limited array view in VEP.

DISCOVERY OF SiCSi IN IRC+10216: A MISSING LINK BETWEEN GAS AND DUST CARRIERS OF Si–C BONDS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cernicharo, J.; Agúndez, M.; Prieto, L. Velilla

2015-06-10

We report the discovery in space of a disilicon species, SiCSi, from observations between 80 and 350 GHz with the IRAM 30 m radio telescope. Owing to the close coordination between laboratory experiments and astrophysics, 112 lines have now been detected in the carbon-rich star CW Leo. The derived frequencies yield improved rotational and centrifugal distortion constants up to sixth order. From the line profiles and interferometric maps with the Submillimeter Array, the bulk of the SiCSi emission arises from a region of 6″ in radius. The derived abundance is comparable to that of SiC{sub 2}. As expected from chemicalmore » equilibrium calculations, SiCSi and SiC{sub 2} are the most abundant species harboring a Si−C bond in the dust formation zone and certainly both play a key role in the formation of SiC dust grains.« less

Monolithic Silicon Microbolometer Materials for Uncooled Infrared Detectors

DTIC Science & Technology

2015-05-21

covered by an active sensing material, and G is the thermal conductance of the supporting legs. Another important figure of merit is the noise...have a low thermal conductance to maximize thermal isolation from the environment. The legs also have a thin film of metal which serve as...fabricated array, glass substrates (≈ 2 mm thick) were used due to their low thermal conductivity and therefore a lower ability to transport heat away

Characterization of Sensitivity Encoded Silicon Photomultiplier (SeSP) with 1-Dimensional and 2-Dimensional Encoding for High Resolution PET/MR

NASA Astrophysics Data System (ADS)

Omidvari, Negar; Schulz, Volkmar

2015-06-01

This paper evaluates the performance of a new type of PET detectors called sensitivity encoded silicon photomultiplier (SeSP), which allows a direct coupling of small-pitch crystal arrays to the detector with a reduction in the number of readout channels. Four SeSP devices with two separate encoding schemes of 1D and 2D were investigated in this study. Furthermore, both encoding schemes were manufactured in two different sizes of 4 ×4 mm2 and 7. 73 ×7. 9 mm2, in order to investigate the effect of size on detector parameters. All devices were coupled to LYSO crystal arrays with 1 mm pitch size and 10 mm height, with optical isolation between crystals. The characterization was done for the key parameters of crystal-identification, energy resolution, and time resolution as a function of triggering threshold and over-voltage (OV). Position information was archived using the center of gravity (CoG) algorithm and a least squares approach (LSQA) in combination with a mean light matrix around the photo-peak. The positioning results proved the capability of all four SeSP devices in precisely identifying all crystals coupled to the sensors. Energy resolution was measured at different bias voltages, varying from 12% to 18% (FWHM) and paired coincidence time resolution (pCTR) of 384 ps to 1.1 ns was obtained for different SeSP devices at about 18 °C room temperature. However, the best time resolution was achieved at the highest over-voltage, resulting in a noise ratio of 99.08%.

Engineering in-plane silicon nanowire springs for highly stretchable electronics

NASA Astrophysics Data System (ADS)

Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

2018-01-01

Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE2014147-2), the Jiangsu Shuangchuang Team's Personal Program and the Fundamental Research Funds for the Central Universities, and the China Scholarship Council and the Postgraduate Program of Jiangsu Province (No. KYZZ160052).

Analysis and Quantification of Coupling Mechanisms of External Signal Perturbations on Silicon Detectors for Particle Physics Experiments

NASA Astrophysics Data System (ADS)

Arteche, F.; Rivetta, C.; Iglesias, M.; Echeverria, I.

2016-05-01

Silicon detectors have been used in astrophysics satellites and particle detectors for high energy physics (HEP) experiments. For HEP applications, EMC studies have been conducted in silicon detectors to characterize the impact of external noise on the system. They have shown that problems associated with the new generation of silicon detectors are related with interferences generated by the power supplies and auxiliary equipment connected to the device. Characterization of these interferences along with the coupling and their propagation into the susceptible front-end circuits is required for a successful integration of these systems. This paper presents the analysis of the sensitivity curves and coupling mechanisms between the noise and the front-end electronics that have been observed during the characterization of two silicon detector prototypes: the CMS-Silicon tracker detector (CMS-ST) and Silicon Vertex Detector (Belle II-SVD). As a result of these studies, it is possible to identify critical elements in prototypes to take corrective actions in the design and improve the front-end electronics performance.

Maximum likelihood positioning and energy correction for scintillation detectors

NASA Astrophysics Data System (ADS)

Lerche, Christoph W.; Salomon, André; Goldschmidt, Benjamin; Lodomez, Sarah; Weissler, Björn; Solf, Torsten

2016-02-01

An algorithm for determining the crystal pixel and the gamma ray energy with scintillation detectors for PET is presented. The algorithm uses Likelihood Maximisation (ML) and therefore is inherently robust to missing data caused by defect or paralysed photo detector pixels. We tested the algorithm on a highly integrated MRI compatible small animal PET insert. The scintillation detector blocks of the PET gantry were built with the newly developed digital Silicon Photomultiplier (SiPM) technology from Philips Digital Photon Counting and LYSO pixel arrays with a pitch of 1 mm and length of 12 mm. Light sharing was used to readout the scintillation light from the 30× 30 scintillator pixel array with an 8× 8 SiPM array. For the performance evaluation of the proposed algorithm, we measured the scanner’s spatial resolution, energy resolution, singles and prompt count rate performance, and image noise. These values were compared to corresponding values obtained with Center of Gravity (CoG) based positioning methods for different scintillation light trigger thresholds and also for different energy windows. While all positioning algorithms showed similar spatial resolution, a clear advantage for the ML method was observed when comparing the PET scanner’s overall single and prompt detection efficiency, image noise, and energy resolution to the CoG based methods. Further, ML positioning reduces the dependence of image quality on scanner configuration parameters and was the only method that allowed achieving highest energy resolution, count rate performance and spatial resolution at the same time.

Adaptive algorithms of position and energy reconstruction in Anger-camera type detectors: experimental data processing in ANTS

NASA Astrophysics Data System (ADS)

Morozov, A.; Defendi, I.; Engels, R.; Fraga, F. A. F.; Fraga, M. M. F. R.; Gongadze, A.; Guerard, B.; Jurkovic, M.; Kemmerling, G.; Manzin, G.; Margato, L. M. S.; Niko, H.; Pereira, L.; Petrillo, C.; Peyaud, A.; Piscitelli, F.; Raspino, D.; Rhodes, N. J.; Sacchetti, F.; Schooneveld, E. M.; Solovov, V.; Van Esch, P.; Zeitelhack, K.

2013-05-01

The software package ANTS (Anger-camera type Neutron detector: Toolkit for Simulations), developed for simulation of Anger-type gaseous detectors for thermal neutron imaging was extended to include a module for experimental data processing. Data recorded with a sensor array containing up to 100 photomultiplier tubes (PMT) or silicon photomultipliers (SiPM) in a custom configuration can be loaded and the positions and energies of the events can be reconstructed using the Center-of-Gravity, Maximum Likelihood or Least Squares algorithm. A particular strength of the new module is the ability to reconstruct the light response functions and relative gains of the photomultipliers from flood field illumination data using adaptive algorithms. The performance of the module is demonstrated with simulated data generated in ANTS and experimental data recorded with a 19 PMT neutron detector. The package executables are publicly available at http://coimbra.lip.pt/~andrei/

Compact Radiative Control Structures for Millimeter Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari D.; Chuss, David T.; Chervenak, James A.; Henry, Ross M.; Moseley, s. Harvey; Wollack, Edward J.

2010-01-01

We have designed, fabricated, and tested compact radiative control structures, including antireflection coatings and resonant absorbers, for millimeter through submillimeter wave astronomy. The antireflection coatings consist of micromachined single crystal silicon dielectric sub-wavelength honeycombs. The effective dielectric constant of the structures is set by the honeycomb cell geometry. The resonant absorbers consist of pieces of solid single crystal silicon substrate and thin phosphorus implanted regions whose sheet resistance is tailored to maximize absorption by the structure. We present an implantation model that can be used to predict the ion energy and dose required for obtaining a target implant layer sheet resistance. A neutral density filter, a hybrid of a silicon dielectric honeycomb with an implanted region, has also been fabricated with this basic approach. These radiative control structures are scalable and compatible for use large focal plane detector arrays.

Advances in Multi-Pixel Photon Counter technology: First characterization results

NASA Astrophysics Data System (ADS)

Bonanno, G.; Marano, D.; Romeo, G.; Garozzo, S.; Grillo, A.; Timpanaro, M. C.; Catalano, O.; Giarrusso, S.; Impiombato, D.; La Rosa, G.; Sottile, G.

2016-01-01

Due to the recent advances in silicon photomultiplier technology, new types of Silicon Photomultiplier (SiPM), also named Multi-Pixel Photon Counter (MPPC) detectors have become recently available, demonstrating superior performance in terms of their most important electrical and optical parameters. This paper presents the latest characterization results of the novel Low Cross-Talk (LCT) MPPC families from Hamamatsu, where a noticeable fill-factor enhancement and cross-talk reduction is achieved. In addition, the newly adopted resin coating has been proven to yield improved photon detection capabilities in the 280-320 nm spectral range, making the new LCT MPPCs particularly suitable for emerging applications like Cherenkov Telescope Array, and Astroparticle Physics.

Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

NASA Astrophysics Data System (ADS)

Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

2016-12-01

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

Optimization of performance parameters for large area silicon photomultipliers for use in the GlueX experiment

NASA Astrophysics Data System (ADS)

Janzen, Kathryn Louise

Largely because of their resistance to magnetic fields, silicon photomultipliers (SiPMs) are being considered as the readout for the GlueX Barrel Calorimeter, a key component of the GlueX detector located immediately inside a 2.2 T superconducting solenoid. SiPMs with active area 1 x 1 mm2 have been investigated for use in other experiments, but detectors with larger active areas are required for the GlueX BCAL. This puts the GlueX collaboration in the unique position of being pioneers in the use of this frontend detection revolution by driving the technology for larger area sensors. SensL, a photonics research and development company in Ireland, has been collaborating with the University of Regina GlueX group to develop prototype large area SiPMs comprising 16 - 3x3 mm2 cells assembled in a close-packed matrix. Performance parameters of individual SensL 1x1 mm2 and 3x3 mm2 SiPMs along with prototype SensL SiPM arrays are tested, including current versus voltage characteristics, photon detection efficiency, and gain uniformity, in an effort to determine the suitability of these detectors to the GlueX BCAL readout.

AM06: the Associative Memory chip for the Fast TracKer in the upgraded ATLAS detector

NASA Astrophysics Data System (ADS)

Annovi, A.; Beretta, M. M.; Calderini, G.; Crescioli, F.; Frontini, L.; Liberali, V.; Shojaii, S. R.; Stabile, A.

2017-04-01

This paper describes the AM06 chip, which is a highly parallel processor for pattern recognition in the ATLAS high energy physics experiment. The AM06 contains memory banks that store data organized in 18 bit words; a group of 8 words is called "pattern". Each AM06 chip can store up to 131 072 patterns. The AM06 is a large chip, designed in 65 nm CMOS, and it combines full-custom memory arrays, standard logic cells and serializer/deserializer IP blocks at 2 Gbit/s for input/output communication. The overall silicon area is 168 mm2 and the chip contains about 421 million transistors. The AM06 receives the detector data for each event accepted by Level-1 trigger, up to 100 kHz, and it performs a track reconstruction based on hit information from channels of the ATLAS silicon detectors. Thanks to the design of a new associative memory cell and to the layout optimization, the AM06 consumption is only about 1 fJ/bit per comparison. The AM06 has been fabricated and successfully tested with a dedicated test system.

Silicon nitride Micromesh Bolometer Array for Submillimeter Astrophysics.

PubMed

Turner, A D; Bock, J J; Beeman, J W; Glenn, J; Hargrave, P C; Hristov, V V; Nguyen, H T; Rahman, F; Sethuraman, S; Woodcraft, A L

2001-10-01

We present the design and performance of a feedhorn-coupled bolometer array intended for a sensitive 350-mum photometer camera. Silicon nitride micromesh absorbers minimize the suspended mass and heat capacity of the bolometers. The temperature transducers, neutron-transmutation-doped Ge thermistors, are attached to the absorber with In bump bonds. Vapor-deposited electrical leads address the thermistors and determine the thermal conductance of the bolometers. The bolometer array demonstrates a dark noise-equivalent power of 2.9 x 10(-17) W/ radicalHz and a mean heat capacity of 1.3 pJ/K at 390 mK. We measure the optical efficiency of the bolometer and feedhorn to be 0.45-0.65 by comparing the response to blackbody calibration sources. The bolometer array demonstrates theoretical noise performance arising from the photon and the phonon and Johnson noise, with photon noise dominant under the design background conditions. We measure the ratio of total noise to photon noise to be 1.21 under an absorbed optical power of 2.4 pW. Excess noise is negligible for audio frequencies as low as 30 mHz. We summarize the trade-offs between bare and feedhorn-coupled detectors and discuss the estimated performance limits of micromesh bolometers. The bolometer array demonstrates the sensitivity required for photon noise-limited performance from a spaceborne, passively cooled telescope.

Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Waczynski, A.; La, A.; Sundaram, M.; Costard, E.; Jhabvala, C.; Kan, E.; Kahle, D.; Foltz, R.;

ZnO transparent conductive oxide for thin film silicon solar cells

NASA Astrophysics Data System (ADS)

Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

2010-03-01

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

Design and properties of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Bar, Jan; Budzyński, Tadeusz; CieŻ, Michal; Grabiec, Piotr; Kozłowski, Roman; Kulawik, Jan; Panas, Andrzej; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecka, Iwona; Wielunski, Marek; Witek, Krzysztof; Yakushev, Alexander; Zaborowski, Michał

2013-07-01

The paper discusses the design of charged-particle detectors commissioned and developed at the Institute of Electron Technology (ITE) in collaboration with foreign partners, used in international research on transactinide elements and to build personal radiation protection devices in Germany. Properties of these detectors and the results obtained using the devices are also presented. The design of the following epiplanar detector structures is discussed: ♢ 64-element chromatographic arrays for the COMPACT (Cryo On-line Multidetector for Physics And Chemistry of Transactinides) detection system used at the GSI Helmholtzzentrum für Schwerionenforschung in Darmstadt (GSI) for research on Hassium, Copernicium and Flerovium, as well as elements 119 and 120, ♢ 2-element flow detectors for the COLD (Cryo On-Line Detector) system used for research on Copernicium and Flerovium at the Joint Institute for Nuclear Research, Dubna, ♢ detectors for a radon exposimeter and sensors for a neutron dosimeter developed at the Institut für Strahlenschutz, Helmholtz Zentrum München. The design of planar detectors - single-sided and double-sided strip detectors for the Focal Plane Detector Box used at GSI for research on Flerovium and elements 119 and 120 is also discussed.

The charge pump PLL clock generator designed for the 1.56 ns bin size time-to-digital converter pixel array of the Timepix3 readout ASIC

NASA Astrophysics Data System (ADS)

Fu, Y.; Brezina, C.; Desch, K.; Poikela, T.; Llopart, X.; Campbell, M.; Massimiliano, D.; Gromov, V.; Kluit, R.; van Beauzekom, M.; Zappon, F.; Zivkovic, V.

2014-01-01

Timepix3 is a newly developed pixel readout chip which is expected to be operated in a wide range of gaseous and silicon detectors. It is made of 256 × 256 pixels organized in a square pixel-array with 55 μm pitch. Oscillators running at 640 MHz are distributed across the pixel-array and allow for a highly accurate measurement of the arrival time of a hit. This paper concentrates on a low-jitter phase locked loop (PLL) that is located in the chip periphery. This PLL provides a control voltage which regulates the actual frequency of the individual oscillators, allowing for compensation of process, voltage, and temperature variations.

Coincidence detection of spatially correlated photon pairs with a monolithic time-resolving detector array.

PubMed

Unternährer, Manuel; Bessire, Bänz; Gasparini, Leonardo; Stoppa, David; Stefanov, André

2016-12-12

We demonstrate coincidence measurements of spatially entangled photons by means of a multi-pixel based detection array. The sensor, originally developed for positron emission tomography applications, is a fully digital 8×16 silicon photomultiplier array allowing not only photon counting but also per-pixel time stamping of the arrived photons with an effective resolution of 265 ps. Together with a frame rate of 500 kfps, this property exceeds the capabilities of conventional charge-coupled device cameras which have become of growing interest for the detection of transversely correlated photon pairs. The sensor is used to measure a second-order correlation function for various non-collinear configurations of entangled photons generated by spontaneous parametric down-conversion. The experimental results are compared to theory.

Radiation response and basic dosimetric characterisation of the ‘Magic Plate’

NASA Astrophysics Data System (ADS)

Alrowaili, Z. A.; Lerch, M.; Petasecca, M.; Carolan, M.; Rosenfeld, A.

2017-02-01

Two Dimensional (2D) silicon diode arrays are often implemented in radiation therapy quality assurance (QA) applications due to their advantages such as: real-time operation (compared to the films), large dynamic range and small size (compared to ionization chambers). The Centre for Medical Radiation Physics, University of Wollongong has developed a multifunctional 2D silicon diode array known as the Magic Plate (MP) for real-time applications and is suitable as a transmission detector for photon flunce mapping (MPTM) or for in phantom dose mapping (MPDM). The paper focusses on the characterisation of the MPDM in terms of output factor and square field beam profiling in 6 MV, 10 MV and 18 MV clinical photon fields. We have found excellent agreement with three different ion chambers for all measured parameters with output factors agreeing within 1.2% and field profiles agreeing within 3% and/or 3mm. This work has important implications for the development of the MP when operating in transmission mapping mode.

Measurement of the energy and time resolution of a undoped CsI + MPPC array for the Mu2e experiment

DOE PAGES

Atanova, O.; Cordelli, M.; Corradi, G.; ...

2017-02-13

This paper describes the measurements of energy and time response and resolution of a 3 x 3 array made of undoped CsI crystals coupled to large area Hamamatsu Multi Pixel Photon Counters. The measurements have been performed using the electron beam of the Beam Test Facility in Frascati (Rome, Italy) in the energy range 80-120 MeV. The measured energy resolution, estimated with the FWHM, at 100 MeV is 16.4%. This resolution is dominated by the energy leakage due to the small dimensions of the prototype. The time is reconstructed by fitting the leading edge of the digitized signals and applyingmore » a digital constant fraction discrimination technique. A time resolution of about 110 ps at 100 MeV is achieved.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gatingmore » time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.« less

Development of a front-end analog circuit for multi-channel SiPM readout and performance verification for various PET detector designs

NASA Astrophysics Data System (ADS)

Ko, Guen Bae; Yoon, Hyun Suk; Kwon, Sun Il; Lee, Chan Mi; Ito, Mikiko; Hong, Seong Jong; Lee, Dong Soo; Lee, Jae Sung

2013-03-01

Silicon photomultipliers (SiPMs) are outstanding photosensors for the development of compact imaging devices and hybrid imaging systems such as positron emission tomography (PET)/ magnetic resonance (MR) scanners because of their small size and MR compatibility. The wide use of this sensor for various types of scintillation detector modules is being accelerated by recent developments in tileable multichannel SiPM arrays. In this work, we present the development of a front-end readout module for multi-channel SiPMs. This readout module is easily extendable to yield a wider detection area by the use of a resistive charge division network (RCN). We applied this readout module to various PET detectors designed for use in small animal PET/MR, optical fiber PET/MR, and double layer depth of interaction (DOI) PET. The basic characteristics of these detector modules were also investigated. The results demonstrate that the PET block detectors developed using the readout module and tileable multi-channel SiPMs had reasonable performance.

Evaluation of a Silicon 90Sr Betavoltaic Power Source.

PubMed

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90 Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90 Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Evaluation of a Silicon 90Sr Betavoltaic Power Source

PubMed Central

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-01-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles. PMID:27905521

Evaluation of a Silicon 90Sr Betavoltaic Power Source

NASA Astrophysics Data System (ADS)

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Ultrafast laser direct hard-mask writing for high efficiency c-Si texture designs

NASA Astrophysics Data System (ADS)

Kumar, Kitty; Lee, Kenneth K. C.; Nogami, Jun; Herman, Peter R.; Kherani, Nazir P.

2013-03-01

This study reports a high-resolution hard-mask laser writing technique to facilitate the selective etching of crystalline silicon (c-Si) into an inverted-pyramidal texture with feature size and periodicity on the order of the wavelength which, thus, provides for both anti-reflection and effective light-trapping of infrared and visible light. The process also enables engineered positional placement of the inverted-pyramid thereby providing another parameter for optimal design of an optically efficient pattern. The proposed technique, a non-cleanroom process, is scalable for large area micro-fabrication of high-efficiency thin c-Si photovoltaics. Optical wave simulations suggest the fabricated textured surface with 1.3 μm inverted-pyramids and a single anti-reflective coating increases the relative energy conversion efficiency by 11% compared to the PERL-cell texture with 9 μm inverted pyramids on a 400 μm thick wafer. This efficiency gain is anticipated to improve further for thinner wafers due to enhanced diffractive light trapping effects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pern, F.J.; Glick, S.H.

We have conducted a series of accelerated exposure test (AET) studies for various crystalline-Si (c-Si) and amorphous-Si (a-Si) cell samples that were encapsulated with different superstrates, pottants, and substrates. Nonuniform browning patterns of ethylene vinyl acetate (EVA) pottants were observed for glass/EVA/glass-encapsulated c-Si cell samples under solar simulator exposures at elevated temperatures. The polymer/polymer-configured laminates with Tedlar or Tefzel did not discolor because of photobleaching reactions, but yellowed with polyester or nylon top films. Delamination was observed for the polyester/EVE layers on a-Si minimodules and for a polyolefin-based thermoplastic pottant at high temperatures. For all tested c-Si cell samples, irregularmore » changes in the current-voltage parameters were observed that could not be accounted for simply by the transmittance changes of the superstrate/pottant layers. Silicone-type adhesives used under UV-transmitting polymer top films were observed to cause greater cell current/efficiency loss than EVA or polyethylene pottants. {copyright} {ital 1999 American Institute of Physics.}« less

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

Measurements of the Optical Performance of Prototype TES Bolometers for SAFARI

NASA Astrophysics Data System (ADS)

Audley, M. D.; de Lange, G.; Ranjan, M.; Gao, J.-R.; Khosropanah, P.; Ridder, M. L.; Mauskopf, P. D.; Morozov, D.; Doherty, S.; Trappe, N.; Withington, S.

2014-09-01

We have measured the optical response of prototype detectors for SAFARI, the far-infrared imaging spectrometer for the SPICA satellite. SAFARI's three bolometer arrays, coupled with a Fourier transform spectrometer, will provide images of a 2'×2' field of view with spectral information over the wavelength range 34-210 μm. Each horn-coupled bolometer consists of a transition edge sensor (TES), with a transition temperature close to 100 mK, and a thin-film Ta absorber on a thermally-isolated silicon nitride membrane. SAFARI requires extremely sensitive detectors ( NEP˜2×10-19 W/), with correspondingly low saturation powers (˜5 fW), to take advantage of SPICA's cooled optics. To meet the challenge of testing such sensitive detectors we have constructed an ultra-low background test facility based on a cryogen-free high-capacity dilution refrigerator, paying careful attention to stray-light exclusion, shielding, and vibration isolation. For optical measurements the system contains internal cold (3-30 K) and hot (˜300 K) black-body calibration sources, as well as a light pipe for external illumination. We discuss our measurements of high optical efficiency in prototype SAFARI detectors and describe recent improvements to the test facility that will enable us to test the full SAFARI focal-plane arrays.

Comparación del funcionamiento entre PMT y SiPM para la detección de Cherenkov atmosférico en el Complejo Astronómico El Leoncito

NASA Astrophysics Data System (ADS)

Yelós, L. D.; Suarez, F.; García, B.

2017-10-01

Most recent discoveries in gamma ray astronomy with energies around 50 GeV to 30 TeV, were achieved with ground Cherenkov Telescopes, traditionally composed of a parabolic mirror and a single or an array of photo multiplier tubes (PMTs) in their focus. The same detectors (or similar) are used in most astrophysics experiments. Recently, a new detector, the silicon photo-multiplier (SiPM), is progressively replacing the PMTs due to their technical advantages. However some limitations in their functioning make them more complex to use than PMTs and forces their characterization for each project. This work describes the characterization of SiPM from SensL (model MicroFC-SMA-30035) and a PMT from Hamamatsu (model R1463), both detectors are possible options to be used in an array of three Cherenkov telescopes at CASLEO. Additionally, we include the results of the operation of both detectors under controlled laboratory conditions that simulate expected conditions at field. Laboratory test were run in a darkbox with a data acquisition system, a personalized data analyze system with ROOT libraries, temperature control and monitoring, polarization control, a controlled light source, and humidity monitoring.

A novel depth-of-interaction block detector for positron emission tomography using a dichotomous orthogonal symmetry decoding concept.

PubMed

Zhang, Yuxuan; Yan, Han; Baghaei, Hossain; Wong, Wai-Hoi

2016-02-21

Conventionally, a dual-end depth-of-interaction (DOI) block detector readout requires two two-dimensional silicon photomultiplier (SiPM) arrays, one on top and one on the bottom, to define the XYZ positions. However, because both the top and bottom SiPM arrays are reading the same pixels, this creates information redundancy. We propose a dichotomous orthogonal symmetric (DOS) dual-end readout block detector design, which removes this redundancy by reducing the number of SiPMs and still achieves XY and DOI (Z) decoding for positron emission tomography (PET) block detector. Reflecting films are used within the block detector to channel photons going to the top of the block to go only in the X direction, and photons going to the bottom are channeled along the Y direction. Despite the unidirectional channeling on each end, the top readout provides both X and Y information using two one-dimensional SiPM arrays instead of a two-dimensional SiPM array; similarly, the bottom readout also provides both X and Y information with just two one-dimensional SiPM arrays. Thus, a total of four one-dimensional SiPM arrays (4  ×  N SiPMs) are used to decode the XYZ positions of the firing pixels instead of two two-dimensional SiPM arrays (2  ×  N  ×  N SiPMs), reducing the number of SiPM arrays per block from 2N(2) to 4 N for PET/MR or PET/CT systems. Moreover, the SiPM arrays on one end can be replaced by two regular photomultiplier tubes (PMTs), so that a block needs only 2 N SiPMs  +  2 half-PMTs; this hybrid-DOS DOI block detector can be used in PET/CT systems. Monte Carlo simulations were carried out to study the performance of our DOS DOI block detector design, including the XY-decoding quality, energy resolution, and DOI resolution. Both BGO and LSO scintillators were studied. We found that 4 mm pixels were well decoded for 5  ×  5 BGO and 9  ×  9 LSO arrays with 4 to 5 mm DOI resolution and 16-20% energy resolution. By adding light-channel decoding, we modified the DOS design to a high-resolution design, which resolved scintillator pixels smaller than the SiPM dimensions. Detector pixels of 2.4 mm were decoded for 8  ×  8 BGO and 15  ×  15 LSO arrays with 5 mm DOI resolution and 20-23% energy resolution. Time performance was also studied for the 8  ×  8 BGO and 15  ×  15 LSO HR-DOS arrays. The timing resolution for the corner and central crystals is 986  ±  122 ps and 1.89  ±  0.17 μs respectively with BGO, 137  ±  42 ps and 458  ±  67 ps respectively with LSO. Monte Carlo simulations with GATE/Geant4 demonstrated the feasibility of our DOS DOI block detector design. In conclusion, our novel design achieved good performance except the time performance while using fewer SiPMs and supporting electronic channels than the current non-DOI PET detectors. This novel design can significantly reduce the cost, heat, and readout complexity of DOI block detectors for PET/MR/CT systems that don't require the time-of-flight capability.

Development and Production of Array Barrier Detectors at SCD

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

2017-09-01

XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

A tetrahedron beam computed tomography benchtop system with a multiple pixel field emission x-ray tube.

PubMed

Xu, Xiaochao; Kim, Joshua; Laganis, Philip; Schulze, Derek; Liang, Yongguang; Zhang, Tiezhi

2011-10-01

To demonstrate the feasibility of Tetrahedron Beam Computed Tomography (TBCT) using a carbon nanotube (CNT) multiple pixel field emission x-ray (MPFEX) tube. A multiple pixel x-ray source facilitates the creation of novel x-ray imaging modalities. In a previous publication, the authors proposed a Tetrahedron Beam Computed Tomography (TBCT) imaging system which comprises a linear source array and a linear detector array that are orthogonal to each other. TBCT is expected to reduce scatter compared with Cone Beam Computed Tomography (CBCT) and to have better detector performance. Therefore, it may produce improved image quality for image guided radiotherapy. In this study, a TBCT benchtop system has been developed with an MPFEX tube. The tube has 75 CNT cold cathodes, which generate 75 x-ray focal spots on an elongated anode, and has 4 mm pixel spacing. An in-house-developed, 5-row CT detector array using silicon photodiodes and CdWO(4) scintillators was employed in the system. Hardware and software were developed for tube control and detector data acquisition. The raw data were preprocessed for beam hardening and detector response linearity and were reconstructed with an FDK-based image reconstruction algorithm. The focal spots were measured at about 1 × 2 mm(2) using a star phantom. Each cathode generates around 3 mA cathode current with 2190 V gate voltage. The benchtop system is able to perform TBCT scans with a prolonged scanning time. Images of a commercial CT phantom were successfully acquired. A prototype system was developed, and preliminary phantom images were successfully acquired. MPFEX is a promising x-ray source for TBCT. Further improvement of tube output is needed in order for it to be used in clinical TBCT systems.

The Detector and Readout Systems of the Micro-X High Resolution Microcalorimeter X-Ray Imaging Rocket

NASA Astrophysics Data System (ADS)

Wikus, P.; Doriese, W. B.; Eckart, M. E.; Adams, J. S.; Bandler, S. R.; Brekosky, R. P.; Chervenak, J. A.; Ewin, A. J.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Galeazzi, M.; Hilton, G.; Irwin, K. D.; Kelley, R. L.; Kilbourne, C. A.; Leman, S. W.; McCammon, D.; Porter, F. S.; Reintsema, C. D.; Rutherford, J. M.; Trowbridge, S. N.

2009-12-01

The Micro-X sounding rocket experiment will deploy an imaging transition-edge-sensor (TES) microcalorimeter spectrometer to observe astrophysical sources in the 0.2-3.0 keV band. The instrument has been designed at a systems level, and the first items of flight hardware are presently being built. In the first flight, planned for January 2011, the spectrometer will observe a recently discovered Silicon knot in the Puppis-A supernova remnant. Here we describe the design of the Micro-X science instrument, focusing on the instrument's detector and detector assembly. The current design of the 2-dimensional spectrometer array contains 128 close-packed pixels with a pitch of 600 μm. The conically approximated Wolter-1 mirror will map each of these pixels to a 0.95 arcmin region on the sky; the field of view will be 11.4 arcmin. Targeted energy resolution of the TESs is about 2 eV over the full observing band. A SQUID time-division multiplexer (TDM) will read out the array. The detector time constants will be engineered to approximately 2 ms to match the TDM, which samples each pixel at 32.6 kHz, limited only by the telemetry system of the rocket. The detector array and two SQUID stages of the TDM readout system are accommodated in a lightweight Mg enclosure, which is mounted to the 50 mK stage of an adiabatic demagnetization refrigerator. A third SQUID amplification stage is located on the 1.6 K liquid He stage of the cryostat. An on-board 55-Fe source will fluoresce a Ca target, providing 3.69 and 4.01 keV calibration lines that will not interfere with the scientifically interesting energy band.

Large format imaging arrays for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Wollack, E. J.; Marraige, T.; Staggs, S.; Niemack, M.; Doriese, B.

2006-01-01

We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics.

PubMed

Xue, Zhaoguo; Sun, Mei; Dong, Taige; Tang, Zhiqiang; Zhao, Yaolong; Wang, Junzhuan; Wei, Xianlong; Yu, Linwei; Chen, Qing; Xu, Jun; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

2017-12-13

Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been established, while high resolution transmission electron microscopy analysis reveals a high quality monolike crystallinity in the line-shaped engineered SiNW springs. Excitingly, in situ scanning electron microscopy stretching and current-voltage characterizations also demonstrate a superelastic and robust electric transport carried by the SiNW springs even under large stretching of more than 200%. We suggest that this highly reliable line-shape programming approach holds a strong promise to extend the mature c-Si technology into the development of a new generation of high performance biofriendly and stretchable electronics.

Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

NASA Astrophysics Data System (ADS)

Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

2016-04-01

One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm3 size) with 22Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

Dynamic test results for the CASES ground experiment

NASA Technical Reports Server (NTRS)

Bukley, Angelia P.; Patterson, Alan F.; Jones, Victoria L.

1993-01-01

The Controls, Astrophysics, and Structures Experiment in Space (CASES) Ground Test Facility (GTF) has been developed at Marshall Space Flight Center (MSFC) to provide a facility for the investigation of Controls/Structures Interaction (CSI) phenomena, to support ground testing of a potential shuttle-based CASES flight experiment, and to perform limited boom deployment and retraction dynamics studies. The primary objectives of the ground experiment are to investigate CSI on a test article representative of a Large Space Structure (LSS); provide a platform for Guest Investigators (GI's) to conduct CSI studies; to test and evaluate LSS control methodologies, system identification (ID) techniques, failure mode analysis; and to compare ground test predictions and flight results. The proposed CASES flight experiment consists of a 32 meter deployable/retractable boom at the end of which is an occulting plate. The control objective of the experiment is to maintain alignment of the tip plate (occulter) with a detector located at the base of the boom in the orbiter bay. The tip plate is pointed towards a star, the sun, or the galactic center to collect high-energy X-rays emitted by these sources. The tip plate, boom, and detector comprise a Fourier telescope. The occulting holes in the tip plate are approximately one millimeter in diameter making the alignment requirements quite stringent. Control authority is provided by bidirectional linear thrusters located at the boom tip and Angular Momentum Exchange Devices (AMED's) located at mid-boom and at the tip. The experiment embodies a number of CSI control problems including vibration suppression, pointing a long flexible structure, and disturbance rejection. The CASES GTF is representative of the proposed flight experiment with identical control objectives.

High-Density Superconducting Cables for Advanced ACTPol

NASA Astrophysics Data System (ADS)

Pappas, C. G.; Austermann, J.; Beall, J. A.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Henderson, S. W.; Ho, S. P.; Koopman, B. J.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Niraula, P.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-07-01

Advanced ACTPol (AdvACT) is an upcoming Atacama Cosmology Telescope (ACT) receiver upgrade, scheduled to deploy in 2016, that will allow measurement of the cosmic microwave background polarization and temperature to the highest precision yet with ACT. The AdvACT increase in sensitivity is partly provided by an increase in the number of transition-edge sensors (TESes) per array by up to a factor of two over the current ACTPol receiver detector arrays. The high-density AdvACT TES arrays require 70 \\upmu m pitch superconducting flexible cables (flex) to connect the detector wafer to the first-stage readout electronics. Here, we present the flex fabrication process and test results. For the flex wiring layer, we use a 400-nm-thick sputtered aluminum film. In the center of the cable, the wiring is supported by a polyimide substrate, which smoothly transitions to a bare (uncoated with polyimide) silicon substrate at the ends of the cable for a robust wedge wire-bonding interface. Tests on the first batch of flex made for the first AdvACT array show that the flex will meet the requirements for AdvACT, with a superconducting critical current above 1 mA at 500 mK, resilience to mechanical and cryogenic stress, and a room temperature yield of 97 %.

Achieving ultra-high temperatures with a resistive emitter array

NASA Astrophysics Data System (ADS)

Danielson, Tom; Franks, Greg; Holmes, Nicholas; LaVeigne, Joe; Matis, Greg; McHugh, Steve; Norton, Dennis; Vengel, Tony; Lannon, John; Goodwin, Scott

2016-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to larger formats, many scene projector users require much higher simulated temperatures than can be generated with current technology in order to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024 x 1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1400 K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. A 'scalable' Read In Integrated Circuit (RIIC) is also being developed under the same UHT program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. Results of design verification testing of the completed RIIC will be presented and discussed.