Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lupina, L.; Zoellner, M. H.; Dietrich, B.

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

Conductive Polymer Synthesis with Single-Crystallinity via a Novel Plasma Polymerization Technique for Gas Sensor Applications.

PubMed

Park, Choon-Sang; Kim, Dong Ha; Shin, Bhum Jae; Kim, Do Yeob; Lee, Hyung-Kun; Tae, Heung-Sik

2016-09-30

This study proposes a new nanostructured conductive polymer synthesis method that can grow the single-crystalline high-density plasma-polymerized nanoparticle structures by enhancing the sufficient nucleation and fragmentation of the pyrrole monomer using a novel atmospheric pressure plasma jet (APPJ) technique. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FE-SEM) results show that the plasma-polymerized pyrrole (pPPy) nanoparticles have a fast deposition rate of 0.93 µm·min -1 under a room-temperature process and have single-crystalline characteristics with porous properties. In addition, the single-crystalline high-density pPPy nanoparticle structures were successfully synthesized on the glass, plastic, and interdigitated gas sensor electrode substrates using a novel plasma polymerization technique at room temperature. To check the suitability of the active layer for the fabrication of electrochemical toxic gas sensors, the resistance variations of the pPPy nanoparticles grown on the interdigitated gas sensor electrodes were examined by doping with iodine. As a result, the proposed APPJ device could obtain the high-density and ultra-fast single-crystalline pPPy thin films for various gas sensor applications. This work will contribute to the design of highly sensitive gas sensors adopting the novel plasma-polymerized conductive polymer as new active layer.

Thermal oxidation of single crystal aluminum antimonide and materials having the same

DOEpatents

Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.

2012-12-25

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Sacrificial template method of fabricating a nanotube

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [Berkeley, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yi-Ying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2007-05-01

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the <001> direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar "epitaxial-casting" approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

PubMed

Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

2017-11-16

For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coherent multilayer crystals and method of making

DOEpatents

Schuller, I.K.; Falco, C.M.

A new material consisting of a multilayer crystalline structure is described which is coherent perpendicular to the layers and where each layer is composed of a single crystallilne element. The individual layers may vary from 2A to 100A or more in thickness.

Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2003-11-25

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

A Nanoindentation Study of the Plastic Deformation and Fracture Mechanisms in Single-Crystalline CaFe2As2

NASA Astrophysics Data System (ADS)

Frawley, Keara G.; Bakst, Ian; Sypek, John T.; Vijayan, Sriram; Weinberger, Christopher R.; Canfield, Paul C.; Aindow, Mark; Lee, Seok-Woo

2018-04-01

The plastic deformation and fracture mechanisms in single-crystalline CaFe2As2 has been studied using nanoindentation and density functional theory simulations. CaFe2As2 single crystals were grown in a Sn-flux, resulting in homogeneous and nearly defect-free crystals. Nanoindentation along the [001] direction produces strain bursts, radial cracking, and lateral cracking. Ideal cleavage simulations along the [001] and [100] directions using density functional theory calculations revealed that cleavage along the [001] direction requires a much lower stress than cleavage along the [100] direction. This strong anisotropy of cleavage strength implies that CaFe2As2 has an atomic-scale layered structure, which typically exhibits lateral cracking during nanoindentation. This special layered structure results from weak atomic bonding between the (001) Ca and Fe2As2 layers.

A Nanoindentation Study of the Plastic Deformation and Fracture Mechanisms in Single-Crystalline CaFe 2As 2

DOE PAGES

Frawley, Keara G.; Bakst, Ian; Sypek, John T.; ...

2018-04-10

In this paper, the plastic deformation and fracture mechanisms in single-crystalline CaFe 2As 2 has been studied using nanoindentation and density functional theory simulations. CaFe 2As 2 single crystals were grown in a Sn-flux, resulting in homogeneous and nearly defect-free crystals. Nanoindentation along the [001] direction produces strain bursts, radial cracking, and lateral cracking. Ideal cleavage simulations along the [001] and [100] directions using density functional theory calculations revealed that cleavage along the [001] direction requires a much lower stress than cleavage along the [100] direction. This strong anisotropy of cleavage strength implies that CaFe 2As 2 has an atomic-scalemore » layered structure, which typically exhibits lateral cracking during nanoindentation. This special layered structure results from weak atomic bonding between the (001) Ca and Fe 2As 2 layers.« less

A Nanoindentation Study of the Plastic Deformation and Fracture Mechanisms in Single-Crystalline CaFe 2As 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frawley, Keara G.; Bakst, Ian; Sypek, John T.

In this paper, the plastic deformation and fracture mechanisms in single-crystalline CaFe 2As 2 has been studied using nanoindentation and density functional theory simulations. CaFe 2As 2 single crystals were grown in a Sn-flux, resulting in homogeneous and nearly defect-free crystals. Nanoindentation along the [001] direction produces strain bursts, radial cracking, and lateral cracking. Ideal cleavage simulations along the [001] and [100] directions using density functional theory calculations revealed that cleavage along the [001] direction requires a much lower stress than cleavage along the [100] direction. This strong anisotropy of cleavage strength implies that CaFe 2As 2 has an atomic-scalemore » layered structure, which typically exhibits lateral cracking during nanoindentation. This special layered structure results from weak atomic bonding between the (001) Ca and Fe 2As 2 layers.« less

Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, Min-Sung; Lee, Byung-Teak

2013-02-01

Single crystalline Zn0.8-xMg0.2AlxO thin films were grown on a GaN/Al2O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.6 eV to 4.0 eV, growth rate decreased from 6 nm/min to 3 nm/min, and the surface roughness decreased from 17 nm to 0.8 nm. It was observed that interfacial layers were formed between the thin films and the substrates, identified as cubic MgAl2O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2O4 layer, with low lattice mismatch of ˜7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.

PubMed

Xia, Jing; Huang, Xing; Liu, Ling-Zhi; Wang, Meng; Wang, Lei; Huang, Ben; Zhu, Dan-Dan; Li, Jun-Jie; Gu, Chang-Zhi; Meng, Xiang-Min

2014-08-07

Synthesis of large-area, atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for the large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly-crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates using a simple chemical vapour deposition (CVD) method at atmospheric pressure. Atomic force microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at ∼ 1.56 eV, indicating the transition from an indirect to a direct bandgap. Transmission electron microscopy (TEM) analysis confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, the photoresponse performance of photodetectors based on MoSe2 monolayer was studied for the first time. The devices exhibit a rapid response of ∼ 60 ms and a good photoresponsivity of ∼ 13 mA/W (using a 532 nm laser at an intensity of 1 mW mm(-2) and a bias of 10 V), suggesting that MoSe2 monolayer is a promising material for photodetection applications.

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo

2013-12-02

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore » of 609 cm{sup 2} V{sup −1} s{sup −1}.« less

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

One - step nanosecond laser microstructuring, sulfur hyperdoping, and annealing of silicon surfaces in liquid carbondisulfide

NASA Astrophysics Data System (ADS)

Van Luong, Nguyen; Danilov, P. A.; Ionin, A. A.; Khmel'nitskii, P. A.; Kudryashov, S. I.; Mel'nik, N. N.; Saraeva, I. N.; Смirnov, H. A.; Rudenko, A. A.; Zayarny, D. A.

2017-09-01

We perform a single-shot IR nanosecond laser processing of commercial silicon wafers in ambient air and under a 2 mm thick carbon disulfide liquid layer. We characterize the surface spots modified in the liquid ambient and the spots ablated under the same conditions in air in terms of its surface topography, chemical composition, band-structure modification, and crystalline structure by means of SEM and EDX microscopy, as well as of FT-IR and Raman spectroscopy. These studies indicate that single-step microstructuring and deep (up to 2-3% on the surface) hyperdoping of the crystalline silicon in its submicron surface layer, preserving via pulsed laser annealing its crystallinity and providing high (103 - 104 cm-1) spectrally at near- and mid-IR absorption coefficients, can be obtained in this novel approach, which is very promising for thin - film silicon photovoltaic devices

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure

NASA Technical Reports Server (NTRS)

Pandey, Raghvendra K. (Inventor); Raina, Kanwal K. (Inventor); Solayappan, Narayanan (Inventor)

1995-01-01

A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

γ-Irradiation assisted synthesis of graphene oxide sheets supported Ag nanoparticles with single crystalline structure and parabolic distribution from interlamellar limitation

NASA Astrophysics Data System (ADS)

Yue, Yunhao; Zhou, Baoming; Shi, Jie; Chen, Cheng; Li, Nan; Xu, Zhiwei; Liu, Liangsen; Kuang, Liyun; Ma, Meijun; Fu, Hongjun

2017-05-01

This paper reported a method to fabricate graphene oxide sheets supported Ag nanoparticles (AgNPs/GOS) with single crystalline structure and parabolic distribution without surfactant or functional agent. We used imidazole silver nitrate as intercalation precursor into the layers of graphite oxide, and subsequently reduction and growth of interlamellar AgNPs were induced via γ-irradiation. The results illustrated that the synergism of interlamellar limitation of graphite oxide and fragmentation ability of γ-irradiation could prevent coalescent reaction of AgNPs with other oligomeric clusters, and the single crystalline and small-sized (below 13.9 nm) AgNPs were prepared. Moreover, the content and size of AgNPs exhibited parabolic distribution on GOS surface because the graphite oxide exfoliated to GOS from the edge to the central area of layers. In addition, complete exfoliation degree of GOS and large-sized AgNPs were obtained simultaneously under suitable silver ions concentration. Optimized composites exhibited outstanding surface-enhanced Raman scattering properties for crystal violet with enhancement factor of 1.3 × 106 and detection limit of 1.0 × 10-7 M, indicating that the AgNPs/GOS composites could be applied to trace detection of organic dyes molecules. Therefore, this study presented a strategy for developing GOS supported nanometal with single crystalline structure and parabolic distribution based on γ-irradiation.

Method to grow group III-nitrides on copper using passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

DOEpatents

Li, Qiming; Wang, George T

2015-01-13

A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

Laser ablation of single-crystalline silicon by radiation of pulsed frequency-selective fiber laser

NASA Astrophysics Data System (ADS)

Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

2015-07-01

We have studied the process of destruction of the surface of a single-crystalline silicon wafer scanned by the beam of a pulsed ytterbium-doped fiber laser radiation with a wavelength of λ = 1062 nm. It is established that the laser ablation can proceed without melting of silicon and the formation of a plasma plume. Under certain parameters of the process (radiation power, beam scan velocity, and beam overlap density), pronounced oxidation of silicon microparticles with the formation of a characteristic loose layer of fine powdered silicon dioxide has been observed for the first time. The range of lasing and beam scanning regimes in which the growth of SiO2 layer takes place is determined.

In-situ crystallization of GeTe\\GaSb phase change memory stacked films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A., E-mail: alin.velea@psi.ch; National Institute of Materials Physics, RO-077125 Magurele, Ilfov; Borca, C. N.

2014-12-21

Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C,more » the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.« less

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations

NASA Astrophysics Data System (ADS)

Bai, Xiaoyuan; Shuai, Yao; Gong, Chaoguan; Wu, Chuangui; Luo, Wenbo; Böttger, Roman; Zhou, Shengqiang; Zhang, Wanli

2018-03-01

Single crystalline 128°Y-cut LiNbO3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO3 thin films are modified by low energy Ar+ irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar+ irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar+ irradiation. A two-stage etching mechanism by Ar+ irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

Investigation on the formation process of single-crystalline GaO x barrier in Fe/GaO x /MgO/Fe magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Krishna, N. S.; Doko, N.; Matsuo, N.; Saito, H.; Yuasa, S.

2017-11-01

We have grown Fe(0 0 1)/GaO x (0 0 1)/MgO(0 0 1)/Fe(0 0 1) magnetic tunnel junctions (MTJs) with or without in situ annealing after the deposition of GaO x layer and performed structural characterizations by focusing on the formation process of the single-crystalline GaO x . It was found that, even without the in situ annealing, the as-grown GaO x grown on the MgO was mostly single-crystalline except near the surface region (amorphous). The crystallization temperature of the amorphous region was reduced from 500 °C down to 250 °C by depositing the Fe upper electrode (poly-crystalline). It was clarified that the crystallization of the amorphous region near the Fe/GaO x interface caused the realignments of the crystal grains in the poly-crystalline Fe upper electrode, and, as a result, the fully epitaxial Fe/GaO x /MgO/Fe structure is eventually formed. All the MTJs showed high tunneling magnetoresistance ratios (about 100%) at room temperature, which was almost independent of the formation temperature of the single-crystalline GaO x .

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Seung Sae; Yu, Jung Ho; Lu, Di

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO 3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO 3 membrane lattice collapsesmore » below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. Finally, the transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices.« less

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide.

PubMed

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Liu, Fangze; Stoumpos, Costas C; Traore, Boubacar; Kepenekian, Mikael; Durand, Olivier; Katan, Claudine; Tretiak, Sergei; Crochet, Jared; Ajayan, Pulickel M; Kanatzidis, MercouriG; Even, Jacky; Mohite, Aditya D

2018-02-01

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grown on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. These results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE PAGES

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe; ...

2017-12-11

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Two-dimensional limit of crystalline order in perovskite membrane films

PubMed Central

Hong, Seung Sae; Yu, Jung Ho; Lu, Di; Marshall, Ann F.; Hikita, Yasuyuki; Cui, Yi; Hwang, Harold Y.

2017-01-01

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO3 membrane lattice collapses below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. The transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices. PMID:29167822

Two-dimensional limit of crystalline order in perovskite membrane films

DOE PAGES

Hong, Seung Sae; Yu, Jung Ho; Lu, Di; ...

2017-11-17

Long-range order and phase transitions in two-dimensional (2D) systems—such as magnetism, superconductivity, and crystallinity—have been important research topics for decades. The issue of 2D crystalline order has reemerged recently, with the development of exfoliated atomic crystals. Understanding the dimensional limit of crystalline phases, with different types of bonding and synthetic techniques, is at the foundation of low-dimensional materials design. We study ultrathin membranes of SrTiO 3, an archetypal perovskite oxide with isotropic (3D) bonding. Atomically controlled membranes are released after synthesis by dissolving an underlying epitaxial layer. Although all unreleased films are initially single-crystalline, the SrTiO 3 membrane lattice collapsesmore » below a critical thickness (5 unit cells). This crossover from algebraic to exponential decay of the crystalline coherence length is analogous to the 2D topological Berezinskii-Kosterlitz-Thouless (BKT) transition. Finally, the transition is likely driven by chemical bond breaking at the 2D layer-3D bulk interface, defining an effective dimensional phase boundary for coherent crystalline lattices.« less

Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes.

PubMed

Keum, Chang-Min; Liu, Shiyi; Al-Shadeedi, Akram; Kaphle, Vikash; Callens, Michiel Koen; Han, Lu; Neyts, Kristiaan; Zhao, Hongping; Gather, Malte C; Bunge, Scott D; Twieg, Robert J; Jakli, Antal; Lüssem, Björn

2018-01-15

Liquid-crystalline organic semiconductors exhibit unique properties that make them highly interesting for organic optoelectronic applications. Their optical and electrical anisotropies and the possibility to control the alignment of the liquid-crystalline semiconductor allow not only to optimize charge carrier transport, but to tune the optical property of organic thin-film devices as well. In this study, the molecular orientation in a liquid-crystalline semiconductor film is tuned by a novel blading process as well as by different annealing protocols. The altered alignment is verified by cross-polarized optical microscopy and spectroscopic ellipsometry. It is shown that a change in alignment of the liquid-crystalline semiconductor improves charge transport in single charge carrier devices profoundly. Comparing the current-voltage characteristics of single charge carrier devices with simulations shows an excellent agreement and from this an in-depth understanding of single charge carrier transport in two-terminal devices is obtained. Finally, p-i-n type organic light-emitting diodes (OLEDs) compatible with vacuum processing techniques used in state-of-the-art OLEDs are demonstrated employing liquid-crystalline host matrix in the emission layer.

Tunable phase transition in single-layer TiSe2 via electric field

NASA Astrophysics Data System (ADS)

Liu, Lei; Zhuang, Houlong L.

2018-06-01

Phase transition represents an intriguing physical phenomenon that exists in a number of single-layer transition-metal dichalcogenides. This phenomenon often occurs below a critical temperature and breaks the long-range crystalline order leading to a reconstructed superstructure called the charge-density wave (CDW) structure, which can therefore be recovered by external stimuli such as temperature. Alternatively, we show here that another external stimulation, electric field can also result in the phase transition between the regular and CDW structures of a single-layer transition-metal dichalcogenide. We used single-layer TiSe2 as an example to elucidate the mechanism of the CDW followed by calculations of the electronic structure using a hybrid density functional. We found that applying electric field can tune the phase transition between the 1T and CDW phases of single-layer TiSe2. Our work opens up a route of tuning the phase transition of single-layer materials via electric field.

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

PubMed Central

Dral, A. Petra; Dubbink, David; Nijland, Maarten; ten Elshof, Johan E.; Rijnders, Guus; Koster, Gertjan

2014-01-01

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material. PMID:25549000

Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers

NASA Astrophysics Data System (ADS)

Aubin, J.; Hartmann, J. M.; Veillerot, M.; Essa, Z.; Sermage, B.

2015-11-01

We have investigated the feasibility of selectively growing SiGe:B layers at 450 °C, 20 Torr in a 300 mm industrial reduced pressure chemical vapor deposition tool. A reduced H2 carrier gas mass-flow has been used in order to have acceptable growth rates at such a temperature, which is very low indeed. We have first of all studied on blanket Si wafers the in situ boron doping of SiGe with Si2H6, GeH4 and B2H6. A growth rate increase by a factor close to 7 together with a Ge concentration decrease from 53% down to 32% occurred as the diborane mass-flow increased. Very high B+ ion concentrations were obtained in layers that were single crystalline and smooth. Their concentration increased almost linearly with the B2H6 mass-flow, from 1.8 up to 8.3 × 1020 cm-3. The associated resistivity dropped from 0.43 down to 0.26 mΩ cm. We have then tested whether or not selectivity versus SiO2 could be achieved by adding various amounts of HCl to Si2H6 + GeH4 +B2H6. Single crystalline growth rates of intrinsic SiGe(:B) on Si were very similar to poly-crystalline growth rates on SiO2-covered substrates irrespective of the HCl flow. Straightforward selectivity was thus not feasible with a co-flow approach. As a consequence, a 450 °C deposition/etch (DE) process was evaluated. Growth occurred at 20 Torr with the above-mentioned chemistry, while the selective etch of poly-SiGe:B versus c-SiGe:B was conducted at 740 Torr with a medium HCl mass-flow (F(HCl)/F(H2) = 0.2) and a high H2 flow. A 2.2 etch selectivity was achieved while retaining single crystalline if slightly rough SiGe:B layers.

Electronic structure of clean and Ag-covered single-crystalline Bi2Sr2CuO6

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Shen, Z.-X.; Wells, B. O.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1989-11-01

Photoemission studies of single-crystalline samples of Bi2Sr2CuO6 show clear resemblance to the corresponding data for single crystals of Bi2Sr2CaCu2O8. In particular, a sharp Fermi-level cutoff, giving evidence of metallic conductivity at room temperature, as well as single-component O 1s emission and Cu 2p satellites with a strength amounting to about 50% of that of the main Cu 2p line, are observed. An analysis of the relative core-level photoemission intensities shows that the preferential cleavage plane of single-crystalline Bi2Sr2CuO6 is between adjacent Bi-O layers. Deposition of Ag adatoms causes only weak reaction with the Bi and O ions of the Bi2Sr2CuO6 substrate, while the Cu states rapidly react with the Ag adatoms, as monitored by a continuous reduction of the Cu 2p satellite intensity as the Ag overlayer becomes thicker.

Design and construction of hierarchical TiO2 nanorod arrays by combining layer-by-layer and hydrothermal crystallization techniques for electrochromic application

NASA Astrophysics Data System (ADS)

Chen, Yongbo; Li, Xiaomin; Bi, Zhijie; He, Xiaoli; Li, Guanjie; Xu, Xiaoke; Gao, Xiangdong

2018-05-01

The hierarchical TiO2 (H-TiO2) nanorod arrays (NRAs) composed of single-crystalline nanorods and nanocrystals were finely designed and successfully constructed for electrochromic (EC) application. By combining layer-by-layer (LBL) method and hydrothermal crystallization technique, the superfine nanocrystals (5-7 nm), which can provide abundant active sites and facilitate ion insertion/extraction during EC reactions, were uniformly and conformally assembled on the surface of single-crystalline TiO2 (SC-TiO2) NRAs. The as-formed H-TiO2 NRAs integrate the advantages of one-dimensional NRAs with fast kinetics and superfine nanocrystals with high ion capacity, showing highly enhanced EC performance. Large optical contrast (40.3%), shorter coloring/bleaching time (22/4 s), high coloration efficiency (11.2 cm2 C-1), and excellent cycling stability can be achieved in H-TiO2 NRAs, superior to the pristine SC-TiO2 NRAs and nanocrystalline TiO2 films. This work provides a feasible and well-designed strategy to explore high-performance materials for EC application.

Theoretical and experimental studies of hyperreflective polymer-network cholesteric liquid crystal structures with helicity inversion

NASA Astrophysics Data System (ADS)

Tasolamprou, A. C.; Mitov, M.; Zografopoulos, D. C.; Kriezis, E. E.

2009-03-01

Single-layer cholesteric liquid crystals exhibit a reflection coefficient which is at most 50% for unpolarized incident light. We give theoretical and experimental evidence of single-layer polymer-stabilized cholesteric liquid-crystalline structures that demonstrate hyper-reflective properties. Such original features are derived by the concurrent and randomly interlaced presence of both helicities. The fundamental properties of such structures are revealed by detailed numerical simulations based on a stochastic approach.

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Spontaneous Synthesis of Highly Crystalline TiO2 Compact/Mesoporous Stacked Films by a Low-Temperature Steam-Annealing Method for Efficient Perovskite Solar Cells.

PubMed

Sanehira, Yoshitaka; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu

2018-05-23

Highly crystalline TiO 2 nanostructured films were synthesized by a simple steam treatment of a TiCl 4 precursor film under a saturated water vapor atmosphere at 125 °C, here referred to as the steam-annealing method. In a single TiO 2 film preparation step, a bilayer structure comprising a compact bottom layer and a mesoporous surface layer was formed. The mesoporous layer was occupied by bipyramidal nanoparticles, with a composite phase of anatase and brookite crystals. Despite the low-temperature treatment process, the crystallinity of the TiO 2 film was high, comparable with that of the TiO 2 film sintered at 500 °C. The compact double-layered TiO 2 film was applied to perovskite solar cells (PSCs) as an electron-collecting layer. The PSC exhibited a maximum power conversion efficiency (PCE) of 18.9% with an open-circuit voltage ( V OC ) of 1.15 V. The PCE and V OC were higher than those of PSCs using a TiO 2 film formed by 500 °C sintering.

Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

NASA Astrophysics Data System (ADS)

Lu, Zhongyuan; Serrao, Claudy; Khan, Asif Islam; You, Long; Wong, Justin C.; Ye, Yu; Zhu, Hanyu; Zhang, Xiang; Salahuddin, Sayeef

2017-07-01

We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ˜ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides.

Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Zimmerman, Jeramy D.; Lassiter, Brian E .

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasimore » epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.« less

Microcrystalline silicon growth for heterojunction solar cells

NASA Technical Reports Server (NTRS)

Leung, D. C.; Iles, P. A.; Fang, P. H.

1984-01-01

Microcrystalline Si (m-Si) films with a 1.7eV energy bandgap and crystal size of several hundred A were e-beam evaporated on single crystalline Si (c-Si) to form a heterojunction with the substrate, or a window layer to a single crystalline p-n junction (heteroface structure). The goal was to enhance Voc by such uses of the larger bandgap m-Si, with the intriguing prospect of forming heterostructures with exact lattice match on each layer. The heterojunction structure was affected by interface and shunting problems and the best Voc achieved was only 482mV, well below that of single crystal Si homojunctions. The heteroface structure showed promise for some of the samples with p m-Si/p-n structure (the complementary structure did not show any improvement). Although several runs with different deposition conditions were run, the results were inconsistent. Any Voc enhancement obtained was too small to compensate for the current loss due to the extra absorption and poor carrier transport properties of the m-Si film.

Raman study of supported molybdenum disulfide single layers

NASA Astrophysics Data System (ADS)

Durrer, William; Manciu, Felicia; Afanasiev, Pavel; Berhault, Gilles; Chianelli, Russell

2008-10-01

Owing to the increasing demand for clean transportation fuels, highly dispersed single layer transition metal sulfides such as MoS2-based catalysts play an important role in catalytic processes for upgrading and removing sulfur from heavy petroleum feed. In its crystalline bulk form, MoS2 is chemically rather inactive due to a strong tendency to form highly stacked layers, but, when dispersed as single-layer nanoclusters on a support, the MoS2 becomes catalytically active in the hydrogenolysis of sulphur and nitrogen from organic compounds (hydrotreating catalysis). In the present studies alumina-supported MoS2 samples were analyzed by confocal Raman spectroscopy. Evidence of peaks at 152 cm-1, 234 cm-1, and 336 cm-1, normally not seen in the Raman spectrum of the standard bulk crystal, confirms the formation of single layers of MoS2. Furthermore, the presence of the 383 cm-1 Raman line suggests the trigonal prismatic coordination of the formed MoS2 single layers. Depending on the sample preparation method, a restacking of MoS2 layers is also observed, mainly for ex-thiomolybdate samples sulfided at 550 C.

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate.

PubMed

Zhang, Min; Guo, Zuoxing; Zhao, Liang; Yang, Shen; Zhao, Lei

2018-06-08

In 0.82 Ga 0.18 As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In 0.82 Ga 0.18 As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In 0.82 Ga 0.18 As buffer layer. By introducing the graded In x Ga 1−x As buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In 0.82 Ga 0.18 As/In 0.82 Al 0.18 As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

New CVD-based method for the growth of high-quality crystalline zinc oxide layers

NASA Astrophysics Data System (ADS)

Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

2016-07-01

High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

DOE PAGES

Xia, Zhenyang; Song, Haomin; Kim, Munho; ...

2017-07-07

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less

Interface Character of Aluminum-Graphite Metal Matrix Composites.

DTIC Science & Technology

1983-01-27

studied included the commer- cial A/graphite composites; layered model systems on single crystal and poly- crystalline graphite substrates as well as...composition and thickness of the composite interface, and graphite crystal orientation. 3 For the model systems in this study , single crystal graphite...been reviewed by Kingcry. Segregation at surfaces in single- crystal MgO of Fe, Cr and Sc, which were Dresent in concentrations within the single- 3phase

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Long-range ordering effect in electrodeposition of zinc and zinc oxide.

PubMed

Liu, Tao; Wang, Sheng; Shi, Zi-Liang; Ma, Guo-Bin; Wang, Mu; Peng, Ru-Wen; Hao, Xi-Ping; Ming, Nai-Ben

2007-05-01

In this paper, we report the long-range ordering effect observed in the electro-crystallization of Zn and ZnO from an ultrathin aqueous electrolyte layer of ZnSO4 . The deposition branches are regularly angled, covered with random-looking, scalelike crystalline platelets of ZnO. Although the orientation of each crystalline platelet of ZnO appears random, transmission electron microscopy shows that they essentially possess the same crystallographic orientation as the single-crystalline zinc electrodeposit underneath. Based on the experimental observations, we suggest that this unique long-range ordering effect results from an epitaxial nucleation effect in electrocrystallization.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. J.; Chang, Y.; Hou, Y. B.

2011-09-15

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermalmore » strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.« less

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J

2013-08-13

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Two-step fabrication of single-layer rectangular SnSe flakes

NASA Astrophysics Data System (ADS)

Jiang, Jizhou; Wong, Calvin Pei Yu; Zou, Jing; Li, Shisheng; Wang, Qixing; Chen, Jianyi; Qi, Dianyu; Wang, Hongyu; Eda, Goki; Chua, Daniel H. C.; Shi, Yumeng; Zhang, Wenjing; Thye Shen Wee, Andrew

2017-06-01

Recent findings about ultrahigh thermoelectric performances in SnSe single crystals have stimulated research on this binary semiconductor material. Furthermore, single-layer SnSe is an interesting analogue of phosphorene, with potential applications in two-dimensional (2D) nanoelectronics. Although significant advances in the synthesis of SnSe nanocrystals have been made, fabrication of well-defined large-sized single-layer SnSe flakes in a facile way still remains a challenge. The growth of single-layer rectangular SnSe flakes with a thickness of ~6.8 Å and lateral dimensions of about 30 µm  ×  50 µm is demonstrated by a two-step synthesis method, where bulk rectangular SnSe flakes were synthesized first by a vapor transport deposition method followed by a nitrogen etching technique to fabricate single-layer rectangular SnSe flakes in an atmospheric pressure system. The as-obtained rectangular SnSe flakes exhibited a pure crystalline phase oriented along the a-axis direction. Field-effect transistor devices fabricated on individual single-layer rectangular SnSe flakes using gold electrodes exhibited p-doped ambipolar behavior and a hole mobility of about 0.16 cm2 V-1 s-1. This two-step fabrication method can be helpful for growing other similar 2D large-sized single-layer materials.

Single crystal functional oxides on silicon

PubMed Central

Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2016-01-01

Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. PMID:26853112

Analysis of current-driven oscillatory dynamics of single-layer homoepitaxial islands on crystalline conducting substrates

NASA Astrophysics Data System (ADS)

Dasgupta, Dwaipayan; Kumar, Ashish; Maroudas, Dimitrios

2018-03-01

We report results of a systematic study on the complex oscillatory current-driven dynamics of single-layer homoepitaxial islands on crystalline substrate surfaces and the dependence of this driven dynamical behavior on important physical parameters, including island size, substrate surface orientation, and direction of externally applied electric field. The analysis is based on a nonlinear model of driven island edge morphological evolution that accounts for curvature-driven edge diffusion, edge electromigration, and edge diffusional anisotropy. Using a linear theory of island edge morphological stability, we calculate a critical island size at which the island's equilibrium edge shape becomes unstable, which sets a lower bound for the onset of time-periodic oscillatory dynamical response. Using direct dynamical simulations, we study the edge morphological dynamics of current-driven single-layer islands at larger-than-critical size, and determine the actual island size at which the migrating islands undergo a transition from steady to time-periodic asymptotic states through a subcritical Hopf bifurcation. At the highest symmetry of diffusional anisotropy examined, on {111} surfaces of face-centered cubic crystalline substrates, we find that more complex stable oscillatory states can be reached through period-doubling bifurcation at island sizes larger than those at the Hopf points. We characterize in detail the island morphology and dynamical response at the stable time-periodic asymptotic states, determine the range of stability of these oscillatory states terminated by island breakup, and explain the morphological features of the stable oscillating islands on the basis of linear stability theory.

Direct Low-Temperature Growth of Single-Crystalline Anatase TiO2 Nanorod Arrays on Transparent Conducting Oxide Substrates for Use in PbS Quantum-Dot Solar Cells.

PubMed

Chung, Hyun Suk; Han, Gill Sang; Park, So Yeon; Shin, Hee-Won; Ahn, Tae Kyu; Jeong, Sohee; Cho, In Sun; Jung, Hyun Suk

2015-05-20

We report on the direct growth of anatase TiO2 nanorod arrays (A-NRs) on transparent conducting oxide (TCO) substrates that can be directly applied to various photovoltaic devices via a seed layer mediated epitaxial growth using a facile low-temperature hydrothermal method. We found that the crystallinity of the seed layer and the addition of an amine functional group play crucial roles in the A-NR growth process. The A-NRs exhibit a pure anatase phase with a high crystallinity and preferred growth orientation in the [001] direction. Importantly, for depleted heterojunction solar cells (TiO2/PbS), the A-NRs improve both electron transport and injection properties, thereby largely increasing the short-circuit current density and doubling their efficiency compared to TiO2 nanoparticle-based solar cells.

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

NASA Astrophysics Data System (ADS)

Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2018-06-01

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (<102). Even after the post-annealing at 400 °C for the TFTs, the on/off ratio is still poor (˜102) because of the gate-induced drain leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

PubMed Central

Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

2016-01-01

Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

Measurement of the third order non-linearity of gold-graphene hybrid nanocomposite for near-infrared wavelengths

NASA Astrophysics Data System (ADS)

Syed, Salmaan R.; Lim, Guh-Hwan; Lim, Byungkwon; Chon, James W. M.

2016-04-01

We present measurements of nonlinear refraction (NLR) and nonlinear absorption (NLA) of single crystalline gold nanosheets (single crystalline-GNSs) and sputter coated polycrystalline thin gold metal film hybridized with multilayer grapheme (MLG) using Z-Scan technique for near-infrared wavelengths (NIR) ranging from 700 nm to 900 nm. Single crystalline GNSs of 20 nm thickness were prepared through chemical synthesis. MLG was found to have few monolayers of graphene, usually between 1-7 layers with an average of 4 monolayer thickness. The composite of GNSs and MLG was prepared by drop casting GNSs on MLG. Z-Scan experimental was carried out using Ti:sapphire femtosecond pulsed laser (700 nm - 900 nm wavelength, 115-130 fs pulse width and 0.82 MHz-82 MHz repetition rate). Intensity dependence on open aperture Z-scan was studied in detail for all materials. The NLA of polycrystalline thin gold metal film was found to be fractionally higher than that of single crystalline-GNSs. This is thought to be due to field enhancement around of gold islands formed on polycrystalline thin gold metal film during sputtering process. At higher repetition rates NLA phenomenon is diminished due to the temperature accumulation effect. As the repetition rate decreases the nonlinear effect is enhanced. On the other hand MLG exhibited saturable absorption (NSA) . Z-Scan results for single crystalline and poly crystalline gold-MLG nanocomposite exhibit NSA characteristics. The measured NSA coefficient `α' was found to be approximately ≍1.7×10-5-4.5×10-5 cmW-1 which is lower than that of MLG, clearly demonstrating the effect of hybridization.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

The Nature of Metastable AA’ Graphite: Low Dimensional Nano- and Single-Crystalline Forms

PubMed Central

Lee, Jae-Kap; Kim, Jin-Gyu; Hembram, K. P. S. S.; Kim, Yong-Il; Min, Bong-Ki; Park, Yeseul; Lee, Jeon-Kook; Moon, Dong Ju; Lee, Wooyoung; Lee, Sang-Gil; John, Phillip

2016-01-01

Over the history of carbon, it is generally acknowledged that Bernal AB stacking of the sp2 carbon layers is the unique crystalline form of graphite. The universal graphite structure is synthesized at 2,600~3,000 °C and exhibits a micro-polycrystalline feature. In this paper, we provide evidence for a metastable form of graphite with an AA’ structure. The non-Bernal AA’ allotrope of graphite is synthesized by the thermal- and plasma-treatment of graphene nanopowders at ~1,500 °C. The formation of AA’ bilayer graphene nuclei facilitates the preferred texture growth and results in single-crystal AA’ graphite in the form of nanoribbons (1D) or microplates (2D) of a few nm in thickness. Kinetically controlled AA’ graphite exhibits unique nano- and single-crystalline feature and shows quasi-linear behavior near the K-point of the electronic band structure resulting in anomalous optical and acoustic phonon behavior. PMID:28000780

Selective Nanoscale Mass Transport across Atomically Thin Single Crystalline Graphene Membranes.

PubMed

Kidambi, Piran R; Boutilier, Michael S H; Wang, Luda; Jang, Doojoon; Kim, Jeehwan; Karnik, Rohit

2017-05-01

Atomically thin single crystals, without grain boundaries and associated defect clusters, represent ideal systems to study and understand intrinsic defects in materials, but probing them collectively over large area remains nontrivial. In this study, the authors probe nanoscale mass transport across large-area (≈0.2 cm 2 ) single-crystalline graphene membranes. A novel, polymer-free picture frame assisted technique, coupled with a stress-inducing nickel layer is used to transfer single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate track etched supports with well-defined cylindrical ≈200 nm pores. Diffusion-driven flow shows selective transport of ≈0.66 nm hydrated K + and Cl - ions over ≈1 nm sized small molecules, indicating the presence of selective sub-nanometer to nanometer sized defects. This work presents a framework to test the barrier properties and intrinsic quality of atomically thin materials at the sub-nanometer to nanometer scale over technologically relevant large areas, and suggests the potential use of intrinsic defects in atomically thin materials for molecular separations or desalting. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroplating and magnetostructural characterization of multisegmented Co54Ni46/Co85Ni15 nanowires from single electrochemical bath in anodic alumina templates

PubMed Central

2013-01-01

Highly hexagonally ordered hard anodic aluminum oxide membranes, which have been modified by a thin cover layer of SiO2 deposited by atomic layer deposition method, were used as templates for the synthesis of electrodeposited magnetic Co-Ni nanowire arrays having diameters of around 180 to 200 nm and made of tens of segments with alternating compositions of Co54Ni46 and Co85Ni15. Each Co-Ni single segment has a mean length of around 290 nm for the Co54Ni46 alloy, whereas the length of the Co85Ni15 segments was around 430 nm. The composition and crystalline structure of each Co-Ni nanowire segment were determined by transmission electron microscopy and selected area electron diffraction techniques. The employed single-bath electrochemical nanowire growth method allows for tuning both the composition and crystalline structure of each individual Co-Ni segment. The room temperature magnetic behavior of the multisegmented Co-Ni nanowire arrays is also studied and correlated with their structural and morphological properties. PMID:23735184

Single-Layer graphene growth on crystalline Ni(111) and Ni(110) and the fate of Carbon on crystalline Ni(100).

NASA Astrophysics Data System (ADS)

Araujo, Paulo; Mafra, Daniela; Reina, Alfonso; Shin, Young Cheol; Kim, Ki Kang; Dresselhaus, Mildred; Kong, Jing

The growth of large area single-layer graphene (1-LG) is studied using ambient pressure CVD on single crystal Ni(111), Ni(110) and Ni(100). By varying both the furnace temperature in the range of 700 - 1100oC and the gas flow through the growth chamber, a uniform growth of high-quality 1-LG is obtained for Ni(111) and Ni(110), but only multilayer graphene (M-LG) growth could be obtained for Ni(100). The experimental results are interpreted to obtain the optimum combination of temperature and gas flow, and the results reported in this manuscript are interpreted through different thermodynamic mechanisms, such as diffusion, segregation and adsorption, which dictate the formation of different carbon structures over the different crystallographic directions of Ni. Characterization with optical microscopy, Raman spectroscopy and optical transmission accordingly support the experimental findings. DOE Award Number DE-SC0001088, College of Arts and Sciences at the University of Alabama, NRF Award Number 2015R1C1A1A02037083 and NSF-DMR 1507806.

Numerical Simulation of Transport Phenomena for a Double-Layer Laser Powder Deposition of Single-Crystal Superalloy

NASA Astrophysics Data System (ADS)

Liu, Zhaoyang; Qi, Huan

2014-04-01

A turbine blade made of single-crystal superalloys has been commonly used in gas turbine and aero engines. As an effective repair technology, laser powder deposition has been implemented to restore the worn turbine blade tips with a near-net shape capability and highly controllable solidified microstructure. Successful blade repair technology for single-crystal alloys requires a continuous epitaxial grain growth in the same direction of the crystalline orientation of the substrate material to the newly deposited layers. This work presents a three-dimensional numerical model to simulate the transport phenomena for a multilayer coaxial laser powder deposition process. Nickel-based single-crystal superalloy Rene N5 powder is deposited on a directional solidified substrate made of nickel-based directional-solidified alloy GTD 111 to verify the simulation results. The effects of processing parameters including laser power, scanning speed, and powder feeding rate on the resultant temperature field, fluid velocity field, molten pool geometric sizes, and the successive layer remelting ratios are studied. Numerical simulation results show that the maximum temperature of molten pool increases over layers due to the reduced heat dissipation capacity of the deposited geometry, which results in an increased molten pool size and fluid flow velocity at the successive deposited layer. The deposited bead geometry agrees well between the simulation and the experimental results. A large part of the first deposition layer, up to 85 pct of bead height, can be remelted during the deposition of the second layer. The increase of scanning speed decreases the ratio of G/ V (temperature gradient/solidification velocity), leading to an increased height ratio of the misoriented grain near the top surface of the previous deposited layer. It is shown that the processing parameters used in the simulation and experiment can produce a remelting ratio R larger than the misoriented grain height ratio S, which enables remelting of all the misoriented grains and guarantees a continuous growth of the substrate directional-solidified crystalline orientation during the multilayer deposition of single-crystal alloys.

Damage Tolerance and Mechanics of Interfaces in Nanostructured Metals

NASA Astrophysics Data System (ADS)

Foley, Daniel J.

The concept of interface driven properties in crystalline metals has been one of the most intensely discussed topics in materials science for decades. Since the 1980s researchers have been exploring the concept of grain boundary engineering as route for tuning properties such as fracture toughness and irradiation resistance. This is especially true in ultra-fine grained and nanocrystalline materials where grain boundary mediated properties become dominant. More recently, materials composed of hierarchical nanostructures, such as amorphous-crystalline nanolaminates, have attracted considerable attention due to their favorable properties, ease of manufacture and highly tunable microstructure. While both grain boundary engineering and hierarchical nanostructures have shown promise there are still questions remaining regarding the role of specific attributes of the microstructure (such as grain boundaries, grain/layer size and inter/intralayer morphology) in determining material properties. This thesis attempts to address these questions by using atomistic simulations to perform deformation and damage loading studies on a series of nanolaminate and bicrystalline structures. During the course of this thesis the roles of layer thickness, interlayer structure and interlayer chemistry on the mechanical properties of Ni-NiX amorphous-crystalline nanolaminates were explored using atomistic simulations. This thesis found that layer thickness/thickness ratio and amorphous layer chemistry play a crucial role in yield strength and Young's modulus. Analysis of the deformation mechanisms at the atomic scale revealed that structures containing single crystalline, crystalline layers undergo plastic deformation when shear transformation zones form in the amorphous layer and impinge on the amorphous-crystalline interface, leading to dislocation emission. However, structures containing nanocrystalline, crystalline layers (both equiaxed and columnar nanocrystalline) undergo plastic deformation through a combination of grain boundary sliding and grain boundary mediated dislocation nucleation. Since grain boundaries were found to play a critical role as sources and sinks for dislocations in amorphous-crystalline nanolaminates a follow-up study on the effect of grain boundary character on damage accumulation/accommodation in copper symmetric tilt grain boundaries was performed. This study found that grain boundaries will become saturated with damage, a state where grain boundary energy and grain boundary free volume oscillate about a plateau during continuous defect loading (vacancy, interstitial and frenkel pair loading were all considered). Further, grain boundary character (specifically equilibrium grain boundary energy) was strongly correlated to the damage accommodation behavior of grain boundaries in copper. Finally, a study that attempted to link grain boundary damage saturation behavior to variations in grain boundary mechanical properties was performed. This study found no direct relationships between grain boundary damage saturation behavior and variations in grain boundary properties. The results of this thesis provide researchers with several strategies for tuning the properties of amorphous-crystalline nanolaminates. These strategies include manipulated bulk attributes such as layer thickness and morphology as well as manipulation of microscale attributes such as grain boundary engineering. Finally, this thesis provides valuable insight into the damage loading/accommodation behavior of FCC symmetric tilt grain boundaries.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Nanometer Scale Confined Growth of Single-Crystalline Gold Nanowires via Photocatalytic Reduction.

PubMed

Lee, Seonhee; Bae, Changdeuck; Shin, Hyunjung

2018-06-20

Single-crystalline gold nanowires (Au NWs) are directly synthesized by the photocatalytic reduction of an aqueous HAuCl 4 solution inside high-aspect-ratio TiO 2 nanotubes (NTs). Crystalline TiO 2 (anatase) NTs are prepared by the template-assisted atomic layer deposition technique with a subsequent annealing. Under the irradiation of ultraviolet light, photoexcited electrons are formed on the surfaces of TiO 2 NTs and could reduce Au ions to create nuclei without using any surfactant, reducing agent, and/or seed. Once nucleation occurred, high-aspect-ratio Au NWs are grown inside the TiO 2 NTs in a diffusion-controlled manner. As the solution pH increased, the nucleation/growth rate decreased and twin-free (or not observed), single-crystalline Au NWs are formed. At a pH above 6, the nucleation/growth rates increased and Au nanoparticles are observed both inside and outside of the TiO 2 NTs. The confined nanoscale geometries of the interior of the TiO 2 NTs are found to play a key role in the controlled diffusion of Au species and in determining the crystal morphology of the resulting Au NWs.

Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

PubMed

Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

2017-02-01

Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Topotactical growth of thick perovskite oxynitride layers by nitridation of single crystalline oxides

NASA Astrophysics Data System (ADS)

Ebbinghaus, Stefan G.; Aguiar, Rosiana; Weidenkaff, Anke; Gsell, Stefan; Reller, Armin

2008-06-01

Thick films of the perovskite-related oxynitrides LaTiO 2N, NdTiO 2N, SrNbO 2N and SrTaO 2N were synthesised by nitridation of single crystals of the corresponding oxides with general composition ABO 3.5. The oxide crystals were obtained by optical floating zone growth. They correspond to n = 4 member of the A nB nO 3 n+2 family of layered perovskites and were reacted at temperatures between 900 °C and 1050 °C to form the oxynitrides. Electron probe microanalysis proved the presence of nitrogen in a surface layer of a few micrometer thickness. Cross-section SEM revealed additional thin stripes of oxynitride within the bulk of the crystals, indicating that nitrogen is incorporated preferably parallel to the perovskite-type layers, which in turn are connected in a zipper-type mechanism. The formation of the desired perovskite-type oxynitrides was confirmed by X-ray diffraction. Pole figure measurements proved an epitaxial orientation ABO 2N (110)[001] ‖ ABO 3.5 (001)[100]. The mosaicity of the oxynitrides both in polar and azimuthal direction was very small (<2°) indicating a nearly single crystalline quality of the surface layer. The nitridation of the crystals results in a dramatic change in colour. Optical spectroscopy revealed shifts of the absorption edge by more than 200 nm to longer wavelengths with respect to the parent oxides, corresponding to a reduction of the band gap energies by 1.4-1.8 eV.

Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

NASA Astrophysics Data System (ADS)

Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

2016-11-01

Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in 1 bar of CO at 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

2017-06-01

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji

2015-03-15

To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glassmore » substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.« less

Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping

NASA Astrophysics Data System (ADS)

Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li

2018-03-01

Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.

Uniform hexagonal graphene flakes and films grown on liquid copper surface.

PubMed

Geng, Dechao; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi

2012-05-22

Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm(2)), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films on liquid Cu surfaces. Employing a liquid Cu surface completely eliminates the grain boundaries in solid polycrystalline Cu, resulting in a uniform nucleation distribution and low graphene nucleation density, but also enables self-assembly of HGFs into compact and ordered structures. These HGFs show an average two-dimensional resistivity of 609 ± 200 Ω and saturation current density of 0.96 ± 0.15 mA/μm, demonstrating their good conductivity and capability for carrying high current density.

Uniform hexagonal graphene flakes and films grown on liquid copper surface

PubMed Central

Geng, Dechao; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi

2012-01-01

Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm2), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films on liquid Cu surfaces. Employing a liquid Cu surface completely eliminates the grain boundaries in solid polycrystalline Cu, resulting in a uniform nucleation distribution and low graphene nucleation density, but also enables self-assembly of HGFs into compact and ordered structures. These HGFs show an average two-dimensional resistivity of 609 ± 200 Ω and saturation current density of 0.96 ± 0.15 mA/μm, demonstrating their good conductivity and capability for carrying high current density. PMID:22509001

Mechanical properties and structure evolution of single-crystalline silicon irradiated by 1 MeV Au+ and Cu+ ions

NASA Astrophysics Data System (ADS)

Liang, Wei; Zhu, Fei; Ling, Yunhan; Liu, Kezhao; Hu, Yin; Pan, Qifa; Chen, Limin; Zhang, Zhengjun

2018-05-01

Mechanical and structural evolutions of single-crystalline silicon irradiated by a series of doses 1 MeV Au+ ions and Cu+ ions are characterized by Surface laser-acoustic wave spectroscopy by (LA wave), Rutherford backscattering spectrometry and channeling (RBS/C) and transmission electron microscopy (TEM). The behavior of implanted Au+ and Cu+ ions was also simulated by using Stopping and range of ions in matter (SRIM) software package, respectively. It is demonstrated that LA wave and RBS could be applied for accurate evaluation of the TEM observed amorphous layer's thickness. The modified mechanical properties depend on the species and the dose of implantation. For 1 MeV Au+ ions, the threshold dose of completely amorphous is 5 × 1014 atoms/cm2, while the one for Cu+ ions is 5 × 1015 atoms/cm2. Upon completely amorphous, the young's modulus and layer density decreased significantly while saturated with the dose increasing sequentially.

Nanometre-thick single-crystalline nanosheets grown at the water-air interface

NASA Astrophysics Data System (ADS)

Wang, Fei; Seo, Jung-Hun; Luo, Guangfu; Starr, Matthew B.; Li, Zhaodong; Geng, Dalong; Yin, Xin; Wang, Shaoyang; Fraser, Douglas G.; Morgan, Dane; Ma, Zhenqiang; Wang, Xudong

2016-01-01

To date, the preparation of free-standing 2D nanomaterials has been largely limited to the exfoliation of van der Waals solids. The lack of a robust mechanism for the bottom-up synthesis of 2D nanomaterials from non-layered materials has become an obstacle to further explore the physical properties and advanced applications of 2D nanomaterials. Here we demonstrate that surfactant monolayers can serve as soft templates guiding the nucleation and growth of 2D nanomaterials in large area beyond the limitation of van der Waals solids. One- to 2-nm-thick, single-crystalline free-standing ZnO nanosheets with sizes up to tens of micrometres are synthesized at the water-air interface. In this process, the packing density of surfactant monolayers adapts to the sub-phase metal ions and guides the epitaxial growth of nanosheets. It is thus named adaptive ionic layer epitaxy (AILE). The electronic properties of ZnO nanosheets and AILE of other materials are also investigated.

He+ ion irradiation response of Fe–TiO2 multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderoglu, O.; Zhou, M. J.; Zhang, J.

2013-04-01

The accumulation of radiation-induced defect clusters and He bubble formation in He+ ion irradiated nanocrystalline TiO2 and Fe–TiO2 multilayer thin films were investigated using transmission electron microscopy (TEM). Prior to ion irradiation it was found that the crystallinity of TiO2 layers depends on the individual layer thickness: While all TiO2 layers are amorphous at 5 nm individual layer thickness, at 100 nm they are crystalline with a rutile polymorph. After He+ irradiation up to ~6 dpa at room temperature, amorphization of TiO2 layers was not observed in both nanocrystalline TiO2 single layers and Fe–TiO2 multilayers. The suppression of radiation-induced amorphizationmore » in TiO2 is interpreted in terms of a high density of defect sinks in these nano-composites in the form of Fe–TiO2 interphase boundaries and columnar grains within each layer with nano-scale intercolumnar porosity. In addition, a high concentration of He is believed to be trapped at these interfaces in the form of sub-nanometer-scale clusters retarding the formation of relatively larger He bubbles that can be resolved in TEM.« less

Infiltrating a thin or single-layer opal with an atomic vapour: Sub-Doppler signals and crystal optics

NASA Astrophysics Data System (ADS)

Moufarej, Elias; Maurin, Isabelle; Zabkov, Ilya; Laliotis, Athanasios; Ballin, Philippe; Klimov, Vasily; Bloch, Daniel

2014-10-01

Artificial thin glass opals can be infiltrated with a resonant alkali-metal vapour, providing novel types of hybrid systems. The reflection at the interface between the substrate and the opal yields a resonant signal, which exhibits sub-Doppler structures in linear spectroscopy for a range of oblique incidences. This result is suspected to originate in an effect of the three-dimensional confinement of the vapour in the opal interstices. It is here extended to a situation where the opal is limited to a few- or even a single-layer opal film, which is a kind of bidimensional grating. We have developed a flexible one-dimensional layered optical model, well suited for a Langmuir-Blodgett opal. Once extended to the case of a resonant infiltration, the model reproduces quick variations of the lineshape with incidence angle or polarization. Alternately, for an opal limited to a single layer of identical spheres, a three-dimensional numerical calculation was developed. It predicts crystalline anisotropy, which is demonstrated through diffraction on an empty opal made of a single layer of polystyrene spheres.

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

PubMed

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Recent progress in photoactive organic field-effect transistors.

PubMed

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Si, Lina; Guo, Dan; Luo, Jianbin; Lu, Xinchun

2010-03-01

Molecular dynamics simulations of nanoscratching processes were used to study the atomic-scale removal mechanism of single crystalline silicon in chemical mechanical polishing (CMP) process and particular attention was paid to the effect of scratching depth. The simulation results under a scratching depth of 1 nm showed that a thick layer of silicon material was removed by chip formation and an amorphous layer was formed on the silicon surface after nanoscratching. By contrast, the simulation results with a depth of 0.1 nm indicated that just one monoatomic layer of workpiece was removed and a well ordered crystalline surface was obtained, which is quite consistent with previous CMP experimental results. Therefore, monoatomic layer removal mechanism was presented, by which it is considered that during CMP process the material was removed by one monoatomic layer after another, and the mechanism could provide a reasonable understanding on how the high precision surface was obtained. Also, the effects of the silica particle size and scratching velocity on the removal mechanism were investigated; the wear regimes and interatomic forces between silica particle and workpiece were studied to account for the different removal mechanisms with indentation depths of 0.1 and 1 nm.

Self-Assembly of Coherently Dynamic, Auxetic Two-Dimensional Protein Crystals

PubMed Central

Suzuki, Yuta; Cardone, Giovanni; Restrepo, David; Zavattieri, Pablo D.; Baker, Timothy S.; Tezcan, F. Akif

2016-01-01

Two-dimensional (2D) crystalline materials possess unique structural, mechanical, and electronic properties1,2, which have rendered them highly attractive in many applications3-5. Although there have been advances in preparing 2D materials that consist of one or few atomic/molecular layers6,7, bottom-up assembly of 2D crystalline materials remains a considerable challenge and an active area of development8-10. Even more challenging is the design of dynamic 2D lattices that can undergo large-scale motions without loss of crystallinity. Dynamicity in porous 3D crystalline solids has been exploited for stimuli-responsive functions and adaptive behavior11-13. As in the case of such 3D materials, integrating flexibility/adaptiveness into crystalline 2D lattices would greatly broaden the functional scope of 2D materials. Here we report the self-assembly of unsupported, 2D protein lattices with precise spatial arrangements and patterns through a readily accessible design strategy. Three single- or double-point mutants of the C4 symmetric protein RhuA were designed to assemble via different modes of intermolecular interactions (single disulfide, double disulfide and metal coordination) into crystalline 2D arrays. Owing to the flexibility of the single disulfide interactions, the lattices of one of the variants (C98RhuA) are essentially defect-free and undergo substantial but fully correlated changes in molecular arrangement, giving coherently dynamic 2D molecular lattices. Notably, C98RhuA lattices possess a Poisson's ratio of −1, the lowest thermodynamically possible value for an isotropic material. PMID:27135928

S-layer fusion proteins — construction principles and applications

PubMed Central

Ilk, Nicola; Egelseer, Eva M; Sleytr, Uwe B

2011-01-01

Crystalline bacterial cell surface layers (S-layers) are the outermost cell envelope component of many bacteria and archaea. S-layers are monomolecular arrays composed of a single protein or glycoprotein species and represent the simplest biological membrane developed during evolution. The wealth of information available on the structure, chemistry, genetics and assembly of S-layers revealed a broad spectrum of applications in nanobiotechnology and biomimetics. By genetic engineering techniques, specific functional domains can be incorporated in S-layer proteins while maintaining the self-assembly capability. These techniques have led to new types of affinity structures, microcarriers, enzyme membranes, diagnostic devices, biosensors, vaccines, as well as targeting, delivery and encapsulation systems. PMID:21696943

Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jesse, Stephen; He, Qian; Lupini, Andrew R.

2015-10-19

We demonstrate atomic-level sculpting of 3D crystalline oxide nanostructures from metastable amorphous layer in a scanning transmission electron microscope (STEM). Strontium titanate nanostructures grow epitaxially from the crystalline substrate following the beam path. This method can be used for fabricating crystalline structures as small as 1-2 nm and the process can be observed in situ with atomic resolution. We further demonstrate fabrication of arbitrary shape structures via control of the position and scan speed of the electron beam. Combined with broad availability of the atomic resolved electron microscopy platforms, these observations suggest the feasibility of large scale implementation of bulkmore » atomic-level fabrication as a new enabling tool of nanoscience and technology, providing a bottom-up, atomic-level complement to 3D printing.« less

Characterization and use of crystalline bacterial cell surface layers

NASA Astrophysics Data System (ADS)

Sleytr, Uwe B.; Sára, Margit; Pum, Dietmar; Schuster, Bernhard

2001-10-01

Crystalline bacterial cell surface layers (S-layers) are one of the most common outermost cell envelope components of prokaryotic organisms (archaea and bacteria). S-layers are monomolecular arrays composed of a single protein or glycoprotein species and represent the simplest biological membranes developed during evolution. S-layers as the most abundant of prokaryotic cellular proteins are appealing model systems for studying the structure, synthesis, genetics, assembly and function of proteinaceous supramolecular structures. The wealth of information existing on the general principle of S-layers have revealed a broad application potential. The most relevant features exploited in applied S-layer research are: (i) pores passing through S-layers show identical size and morphology and are in the range of ultrafiltration membranes; (ii) functional groups on the surface and in the pores are aligned in well-defined positions and orientations and accessible for chemical modifications and binding functional molecules in very precise fashion; (iii) isolated S-layer subunits from a variety of organisms are capable of recrystallizing as closed monolayers onto solid supports (e.g., metals, polymers, silicon wafers) at the air-water interface, on lipid films or onto the surface of liposomes; (iv) functional domains can be incorporated in S-layer proteins by genetic engineering. Thus, S-layer technologies particularly provide new approaches for biotechnology, biomimetics, molecular nanotechnology, nanopatterning of surfaces and formation of ordered arrays of metal clusters or nanoparticles as required for nanoelectronics.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Optical properties of single and bilayer arsenene phases

NASA Astrophysics Data System (ADS)

Kecik, Deniz; Ciraci, Salim; Durgun, Engin

An extensive investigation of the optical properties of single-layer buckled and washboard arsenene and their bilayers was performed, starting from layered three-dimensional (3D) crystalline phase of arsenic using density functional and many-body perturbation theories combined with Random Phase Approximation. Electron-hole interactions were taken into account by solving the Bethe-Salpeter equation, suggesting first bound exciton energies on the order of 0.7 eV. Thus, many-body effects were found to be crucial for altering the optical properties of arsenene. The light absorption of single layer and bilayer arsenene structures in general falls within the visible-ultraviolet (UV) spectral regime. Moreover, directional anisotropy, varying the number of layers and applying homogeneous or uniaxial in-plane tensile strain were found to modify the optical properties of two-dimensional (2D) arsenene phases, which could be useful for diverse photovoltaic and optoelectronic applications. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No 115F088.

Atomically flat single-crystalline gold nanostructures for plasmonic nanocircuitry.

PubMed

Huang, Jer-Shing; Callegari, Victor; Geisler, Peter; Brüning, Christoph; Kern, Johannes; Prangsma, Jord C; Wu, Xiaofei; Feichtner, Thorsten; Ziegler, Johannes; Weinmann, Pia; Kamp, Martin; Forchel, Alfred; Biagioni, Paolo; Sennhauser, Urs; Hecht, Bert

2010-01-01

Deep subwavelength integration of high-definition plasmonic nanostructures is of key importance in the development of future optical nanocircuitry for high-speed communication, quantum computation and lab-on-a-chip applications. To date, the experimental realization of proposed extended plasmonic networks consisting of multiple functional elements remains challenging, mainly because of the multi-crystallinity of commonly used thermally evaporated gold layers. This can produce structural imperfections in individual circuit elements that drastically reduce the yield of functional integrated nanocircuits. In this paper we demonstrate the use of large (>100 μm(2)) but thin (<80 nm) chemically grown single-crystalline gold flakes that, after immobilization, serve as an ideal basis for focused ion beam milling and other top-down nanofabrication techniques on any desired substrate. Using this methodology we obtain high-definition ultrasmooth gold nanostructures with superior optical properties and reproducible nano-sized features over micrometre-length scales. Our approach provides a possible solution to overcome the current fabrication bottleneck and realize high-definition plasmonic nanocircuitry.

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

NASA Astrophysics Data System (ADS)

Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; de Wolf, Stefaan; Ballif, Christophe

2017-04-01

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Lattice matched semiconductor growth on crystalline metallic substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2013-11-05

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Experimental and theoretical evidence for bilayer-by-bilayer surface melting of crystalline ice

PubMed Central

Sánchez, M. Alejandra; Kling, Tanja; Ishiyama, Tatsuya; van Zadel, Marc-Jan; Mezger, Markus; Jochum, Mara N.; Cyran, Jenée D.; Smit, Wilbert J.; Bakker, Huib J.; Shultz, Mary Jane; Morita, Akihiro; Donadio, Davide; Nagata, Yuki; Bonn, Mischa; Backus, Ellen H. G.

2017-01-01

On the surface of water ice, a quasi-liquid layer (QLL) has been extensively reported at temperatures below its bulk melting point at 273 K. Approaching the bulk melting temperature from below, the thickness of the QLL is known to increase. To elucidate the precise temperature variation of the QLL, and its nature, we investigate the surface melting of hexagonal ice by combining noncontact, surface-specific vibrational sum frequency generation (SFG) spectroscopy and spectra calculated from molecular dynamics simulations. Using SFG, we probe the outermost water layers of distinct single crystalline ice faces at different temperatures. For the basal face, a stepwise, sudden weakening of the hydrogen-bonded structure of the outermost water layers occurs at 257 K. The spectral calculations from the molecular dynamics simulations reproduce the experimental findings; this allows us to interpret our experimental findings in terms of a stepwise change from one to two molten bilayers at the transition temperature. PMID:27956637

A S-Layer Protein of Bacillus anthracis as a Building Block for Functional Protein Arrays by In Vitro Self-Assembly.

PubMed

Wang, Xu-Ying; Wang, Dian-Bing; Zhang, Zhi-Ping; Bi, Li-Jun; Zhang, Ji-Bin; Ding, Wei; Zhang, Xian-En

2015-11-18

S-layer proteins create a cell-surface layer architecture in both bacteria and archaea. Because S-layer proteins self-assemble into a native-like S-layer crystalline structure in vitro, they are attractive building blocks in nanotechnology. Here, the potential use of the S-layer protein EA1 from Bacillus anthracis in constructing a functional nanostructure is investigated, and apply this nanostructure in a proof-of-principle study for serological diagnosis of anthrax. EA1 is genetically fused with methyl parathion hydrolase (MPH), to degrade methyl parathion and provide a label for signal amplification. EA1 not only serves as a nanocarrier, but also as a specific antigen to capture anthrax-specific antibodies. As results, purified EA1-MPH forms a single layer of crystalline nanostructure through self-assembly. Our chimeric nanocatalyst greatly improves enzymatic stability of MPH. When applied to the detection of anthrax-specific antibodies in serum samples, the detection of our EA1-MPH nanostructure is nearly 300 times more sensitive than that of the unassembled complex. Together, it is shown that it is possible to build a functional and highly sensitive nanosensor based on S-layer protein. In conclusion, our present study should serve as a model for the development of other multifunctional nanomaterials using S-layer proteins. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrospun single crystalline fork-like K2V8O21 as high-performance cathode materials for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Hao, Pengfei; Zhu, Ting; Su, Qiong; Lin, Jiande; Cui, Rong; Cao, Xinxin; Wang, Yaping; Pan, Anqiang

2018-06-01

Single crystalline fork-like potassium vanadate (K2V8O21) has been successfully prepared through electrospinning combined with a subsequent annealing process. The as-obtained K2V8O21 forks show a unique layer-by-layer stacked structure with conductive carbon. When used as cathode materials for lithium-ion batteries, the as-prepared fork-like materials exhibit high specific discharge capacity and excellent cyclic stability. High specific discharge capacity of 200.2 mA h g-1 and 131.5 mA h g-1 can be delivered at the current densities of 50 mA g-1 and 500 mA g-1, respectively. Furthermore, the K2V8O21 electrodes exhibit excellent long-term cycling stability that maintain a capacity of 108.3 mA h g-1 after 300 cycles at 500 mA g-1 with a fading rate of only 0.054% per cycle, revealing their potential applications in next generation high-performance lithium-ion batteries.

Method of doping organic semiconductors

DOEpatents

Kloc,; Christian Leo; Ramirez; Arthur Penn; So, Woo-Young

2010-10-26

An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

High-Performance Water-Iodinating Cartridge

NASA Technical Reports Server (NTRS)

Sauer, Richard; Gibbons, Randall E.; Flanagan, David T.

1993-01-01

High-performance cartridge contains bed of crystalline iodine iodinates water to near saturation in single pass. Cartridge includes stainless-steel housing equipped with inlet and outlet for water. Bed of iodine crystals divided into layers by polytetrafluoroethylene baffles. Holes made in baffles and positioned to maximize length of flow path through layers of iodine crystals. Resulting concentration of iodine biocidal; suppresses growth of microbes in stored water or disinfects contaminated equipment. Cartridge resists corrosion and can be stored wet. Reused several times before necessary to refill with fresh iodine crystals.

Structure analysis of aqueous ferrofluids at interface with silicon: neutron reflectometry data

NASA Astrophysics Data System (ADS)

Gapon, I. V.; Petrenko, V. I.; Bulavin, L. A.; Balasoiu, M.; Kubovcikova, M.; Zavisova, V.; Koneracka, M.; Kopcansky, P.; Chiriac, H.; Avdeev, M. V.

2017-05-01

Adsorption of nanoparticles from aqueous ferrofluids (FFs) on solid surface (crystalline silicon) was studied by neutron reflectometry (NR). Two kinds of FFs were considered. First kind was heavy water-based ferrofluids with magnetite nanoparticles coated by double layer of sodium oleate. Second one FF was cobalt ferrite nanoparticles stabilized by lauric acid/sodium n-dodecylsulphate layer and dispersed in water. It was obtained only a single adsorption layer for two types of ferrofluids. The impact of the magnetic nanoparticles concentration and geometry was considered in frame of the adsorption characteristic of FFs.

In situ TEM observation of heterogeneous phase transition of a constrained single-crystalline Ag2Te nanowire.

PubMed

In, Juneho; Yoo, Youngdong; Kim, Jin-Gyu; Seo, Kwanyong; Kim, Hyunju; Ihee, Hyotchel; Oh, Sang Ho; Kim, Bongsoo

2010-11-10

Laterally epitaxial single crystalline Ag2Te nanowires (NWs) are synthesized on sapphire substrates by the vapor transport method. We observed the phase transitions of these Ag2Te NWs via in situ transmission electron microscopy (TEM) after covering them with Pt layers. The constrained NW shows phase transition from monoclinic to a body-centered cubic (bcc) structure near the interfaces, which is ascribed to the thermal stress caused by differences in the thermal expansion coefficients. Furthermore, we observed the nucleation and growth of bcc phase penetrating into the face-centered cubic matrix at 200 °C by high-resolution TEM in real time. Our results would provide valuable insight into how compressive stresses imposed by overlayers affect behaviors of nanodevices.

Toward single-mode active crystal fibers for next-generation high-power fiber devices.

PubMed

Lai, Chien-Chih; Gao, Wan-Ting; Nguyen, Duc Huy; Ma, Yuan-Ron; Cheng, Nai-Chia; Wang, Shih-Chang; Tjiu, Jeng-Wei; Huang, Chun-Ming

2014-08-27

We report what we believe to be the first demonstration of a facile approach with controlled geometry for the production of crystal-core ceramic-clad hybrid fibers for scaling fiber devices to high average powers. The process consists of dip coating a solution of polycrystalline alumina onto a high-crystallinity 40-μm-diameter Ti:sapphire single-crystalline core followed by thermal treatments. Comparison of the measured refractive index with high-resolution transmission electron microscopy reveals that a Ca/Si-rich intragranular layer is precipitated at grain boundaries by impurity segregation and liquid-phase formation due to the relief of misfit strain energy in the Al2O3 matrix, slightly perturbing the refractive index and hence the optical properties. Additionally, electron backscatter diffractions supply further evidence that the Ti:sapphire single-crystalline core provides the template for growth into a sacrificial polycrystalline cladding, bringing the core and cladding into a direct bond. The thus-prepared doped crystal core with the undoped crystal cladding was achieved through the abnormal grain-growth process. The presented results provide a general guideline both for controlling crystal growth and for the performance of hybrid materials and provides insights into how one might design single-mode high-power crystal fiber devices.

Effects of alkyl chain length and anion size on thermal and structural properties for 1-alkyl-3-methylimidazolium hexafluorocomplex salts (C(x)MImAF6, x = 14, 16 and 18; A = P, As, Sb, Nb and Ta).

PubMed

Xu, Fei; Matsumoto, Kazuhiko; Hagiwara, Rika

2012-03-28

A series of 1-alkyl-3-methylimidazolium hexafluorocomplex salts (C(x)MImAF(6), x = 14, 16 and 18, A = P, As, Sb, Nb and Ta) have been characterized by thermal analysis, X-ray diffraction and polarized optical microscopy. A liquid crystalline mesophase is observed for all the C(16)MIm and C(18)MIm salts. The C(14)MIm(+) cation gives a liquid crystalline mesophase only with PF(6)(-). The temperature range of the liquid crystalline mesophase increases with an increase in alkyl chain length or with decrease in anion size. Single-crystal X-ray diffraction revealed that all the C(18)MImAF(6) salts (A = P, As, Sb, Nb and Ta) are isostructural with each other in the crystalline phase and have a layered structure. The interdigitated alkyl chain of the cation has a bent shape like a spoon near the imidazolium ring in the crystalline phase at -100 °C and is tilted with respect to the sheets of the imidazolium headgroups and anions. An increase of temperature increases the ratio of an all-trans conformation to the bent conformation in the crystalline phase. X-ray diffraction and polarized optical microscopy suggested that the liquid crystalline mesophase has a smectic A(2) structure. The interlayer distance increases with a decrease in the anion size since the smaller anion has a stronger coulombic interaction with the imidazolium headgroup, resulting in the decrease of the interdigitated part to give a larger layer spacing.

Ripple structure of crystalline layers in ion-beam-induced Si wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hazra, S.; Chini, T.K.; Sanyal, M.K.

Ion-beam-induced ripple formation in Si wafers was studied by two complementary surface sensitive techniques, namely atomic force microscopy (AFM) and depth-resolved x-ray grazing incidence diffraction (GID). The formation of ripple structure at high doses ({approx}7x10{sup 17} ions/cm{sup 2}), starting from initiation at low doses ({approx}1x10{sup 17} ions/cm{sup 2}) of ion beam, is evident from AFM, while that in the buried crystalline region below a partially crystalline top layer is evident from GID study. Such ripple structure of crystalline layers in a large area formed in the subsurface region of Si wafers is probed through a nondestructive technique. The GID techniquemore » reveals that these periodically modulated wavelike buried crystalline features become highly regular and strongly correlated as one increases the Ar ion-beam energy from 60 to 100 keV. The vertical density profile obtained from the analysis of a Vineyard profile shows that the density in the upper top part of ripples is decreased to about 15% of the crystalline density. The partially crystalline top layer at low dose transforms to a completely amorphous layer for high doses, and the top morphology was found to be conformal with the underlying crystalline ripple.« less

Tunable surface plasmon instability leading to emission of radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gumbs, Godfrey; Donostia International Physics Center; Iurov, Andrii, E-mail: aiurov@chtm.unm.edu

2015-08-07

We propose a new approach for energy conversion from a dc electric field to tunable terahertz emission based on hybrid semiconductors by combining two-dimensional (2D) crystalline layers and a thick conducting material with possible applications for chemical analysis, security scanning, medical (single-molecule) imaging, and telecommunications. The hybrid nano-structure may consist of a single or pair of sheets of graphene, silicene, or a 2D electron gas. When an electric current is passed through a 2D layer, we discover that two low-energy plasmon branches exhibit a characteristic loop in their dispersion before they merge into an unstable region beyond a critical wavemore » vector q{sub c}. This finite q{sub c} gives rise to a wavenumber cutoff in the emission dispersion of the surface plasmon induced instability and emission of radiation (spiler). However, there is no instability for a single driven layer far from the conductor, and the instability of an isolated pair of 2D layers occurs without a wavenumber cutoff. The wavenumber cutoff is found to depend on the conductor electron density, layer separation, distances of layers from the conductor surface, and the driving-current strength.« less

Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2008-04-01

In the present work, the authors report results of broadband dielectric spectroscopy on various samples of CaCu3Ti4O12 (CCTO), also including single-crystalline material, which so far was only rarely investigated. The measurements extend up to 1.3 GHz, covering more than nine frequency decades. We address the question of the origin of the colossal dielectric constants and of the relaxational behavior in this material, including the second relaxation reported in several recent works. For this purpose, the dependence of the temperature- and frequency-dependent dielectric properties on different tempering and surface treatments of the samples and on ac-field amplitude is investigated. Broadband spectra of a single crystal are analyzed by an equivalent circuit description by assuming two highly resistive layers in series to the bulk. Good fits could be achieved, including the second relaxation, which also shows up in single crystals. The temperature- and frequency-dependent intrinsic conductivity of CCTO is consistent with the variable range hopping model. The second relaxation is sensitive to surface treatment and, in contrast to the main relaxation, is also strongly affected by the applied ac voltage. Concerning the origin of the two insulating layers, we discuss a completely surface-related mechanism by assuming the formation of a metal-insulator diode and a combination of surface and internal barriers.

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics.

PubMed

Mánuel, J M; Jiménez, J J; Morales, F M; Lacroix, B; Santos, A J; García, R; Blanco, E; Domínguez, M; Ramírez, M; Beltrán, A M; Alexandrov, D; Tot, J; Dubreuil, R; Videkov, V; Andreev, S; Tzaneva, B; Bartsch, H; Breiling, J; Pezoldt, J; Fischer, M; Müller, J

2018-05-02

This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low Temperature Co-fired Ceramics has been used, as a non-crystalline substrate. Structures like these have never been developed before, and for economic reasons will represent a groundbreaking material in these fields of Electronic. In this sense, the report presents the characterization through various techniques of three series of specimens where GaN was deposited on this ceramic composite, using different buffer layers, and a singular metal-organic chemical vapor deposition related technique for low temperature deposition. Other single crystalline ceramic-based templates were also utilized as substrate materials, for comparison purposes.

Complex Pattern Formation from Current-Driven Dynamics of Single-Layer Epitaxial Islands on Crystalline Conducting Substrates

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Dasgupta, Dwaipayan; Maroudas, Dimitrios

We report a systematic study of complex pattern formation resulting from the driven dynamics of single-layer homoepitaxial islands on face-centered cubic (FCC) crystalline conducting substrate surfaces under the action of an externally applied electric field. The analysis is based on an experimentally validated nonlinear model of mass transport via island edge atomic diffusion, which also accounts for edge diffusional anisotropy. We analyze the morphological stability and simulate the field-driven evolution of rounded islands for an electric field oriented along the fast diffusion direction. For larger than critical island sizes on {110} and {100} FCC substrates, we show that multiple necking instabilities generate complex island patterns, including void-containing islands, mediated by sequences of breakup and coalescence events and distributed symmetrically with respect to the electric field direction. We analyze the dependence of the formed patterns on the original island size and on the duration of application of the external field. Starting from a single large rounded island, we characterize the evolution of the number of daughter islands and their average size and uniformity. The analysis reveals that the pattern formation kinetics follows a universal scaling relation. Division of Materials Sciences & Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (Award No.: DE-FG02-07ER46407).

Crystalline boron nitride aerogels

DOEpatents

Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

2017-04-04

This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Di; Baek, David J.; Hong, Seung Sae

2016-08-22

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-solublemore » Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.« less

Selective Oxidation of Amorphous Carbon Layers without Damaging Embedded Single Wall Carbon Nanotube Bundles

NASA Astrophysics Data System (ADS)

Choi, Young Chul; Lim, Seong Chu

2013-11-01

Single wall carbon nanotubes (SWCNTs) were synthesized by arc discharge, and then purified by selective oxidation of amorphous carbon layers that were found to encase SWCNT bundles and catalyst metal particles. In order to remove selectively the amorphous carbon layers with SWCNTs being intact, we have systematically investigated the thermal treatment conditions; firstly, setting the temperature by measuring the activation energies of SWCNTs and amorphous carbon layers, and then, secondly, finding the optimal process time. As a consequence, the optimal temperature and time for the thermal treatment was found to be 460 °C and 20 min, respectively. The complete elimination of surrounding amorphous carbon layers makes it possible to efficiently disperse the SWCNT bundles, resulting in high absorbance of SWCNT-ink. The SWCNTs which were thermal-treated at optimized temperature (460 °C) and duration (20 min) showed much better crystallinity, dispersibility, and transparent conducting properties, compared with as-synthesized and the nanotubes thermal-treated at different experimental conditions.

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

2018-01-01

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

Silicide surface phases on gold

NASA Technical Reports Server (NTRS)

Green, A. K.; Bauer, E.

1981-01-01

The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

Comparative electrochemical analysis of crystalline and amorphous anodized iron oxide nanotube layers as negative electrode for LIB.

PubMed

Pervez, Syed Atif; Kim, Doohun; Farooq, Umer; Yaqub, Adnan; Choi, Jung-Hee; Lee, You-Jin; Doh, Chil-Hoon

2014-07-23

This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.

Interface-Induced Zeeman-Protected Superconductivity in Ultrathin Crystalline Lead Films

NASA Astrophysics Data System (ADS)

Liu, Yi; Wang, Ziqiao; Zhang, Xuefeng; Liu, Chaofei; Liu, Yongjie; Zhou, Zhimou; Wang, Junfeng; Wang, Qingyan; Liu, Yanzhao; Xi, Chuanying; Tian, Mingliang; Liu, Haiwen; Feng, Ji; Xie, X. C.; Wang, Jian

2018-04-01

Two-dimensional (2D) superconducting systems are of great importance for exploring exotic quantum physics. The recent development of fabrication techniques has stimulated studies of high-quality single-crystalline 2D superconductors, where intrinsic properties give rise to unprecedented physical phenomena. Here, we report the observation of Zeeman-type spin-orbit interaction protected superconductivity (Zeeman-protected superconductivity) in 4-monolayer (ML) to 6-ML crystalline Pb films grown on striped incommensurate Pb layers on Si(111) substrates by molecular beam epitaxy. An anomalously large in-plane critical field far beyond the Pauli limit is detected, which can be attributed to the Zeeman-protected superconductivity due to the in-plane inversion symmetry breaking at the interface. Our work demonstrates that, in superconducting heterostructures, the interface can induce Zeeman-type spin-orbit interactions and modulate the superconductivity.

Electrodeposition of CdSe on GaAs and InP substrates

NASA Astrophysics Data System (ADS)

Etcheberry, A.; Cachet, H.; Cortes, R.; Froment, M.

2001-06-01

Epitaxial CdSe layers have been electrodeposited on the (1 0 0) and ( 1¯ 1¯ 1¯) faces of GaAs and InP single crystals. Chemical composition and crystalline quality of CdSe have been studied by X-photoelectron spectroscopy, reflection high energy electron diffraction and X-ray diffraction. Influence of the substrate has been pointed out.

Amorphization of hard crystalline materials by electrosprayed nanodroplet impact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu; Torrents, Anna; Borrajo-Pelaez, Rafael

2014-11-07

A beam of electrosprayed nanodroplets impacting on single-crystal silicon amorphizes a thin surface layer of a thickness comparable to the diameter of the drops. The phase transition occurs at projectile velocities exceeding a threshold, and is caused by the quenching of material melted by the impacts. This article demonstrates that the amorphization of silicon is a general phenomenon, as nanodroplets impacting at sufficient velocity also amorphize other covalently bonded crystals. In particular, we bombard single-crystal wafers of Si, Ge, GaAs, GaP, InAs, and SiC in a range of projectile velocities, and characterize the samples via electron backscatter diffraction and transmissionmore » electron microscopy to determine the aggregation state under the surface. InAs requires the lowest projectile velocity to develop an amorphous layer, followed by Ge, Si, GaAs, and GaP. SiC is the only semiconductor that remains fully crystalline, likely due to the relatively low velocities of the beamlets used in this study. The resiliency of each crystal to amorphization correlates well with the specific energy needed to melt it except for Ge, which requires projectile velocities higher than expected.« less

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Novel polymer-free iridescent lamellar hydrogel for two-dimensional confined growth of ultrathin gold membranes

NASA Astrophysics Data System (ADS)

Niu, Jian; Wang, Dong; Qin, Haili; Xiong, Xiong; Tan, Pengli; Li, Youyong; Liu, Rui; Lu, Xuxing; Wu, Jian; Zhang, Ting; Ni, Weihai; Jin, Jian

2014-02-01

Hydrogels are generally thought to be formed by nano- to micrometre-scale fibres or polymer chains, either physically branched or entangled with each other to trap water. Although there are also anisotropic hydrogels with apparently ordered structures, they are essentially polymer fibre/discrete polymer chains-based network without exception. Here we present a type of polymer-free anisotropic lamellar hydrogels composed of 100-nm-thick water layers sandwiched by two bilayer membranes of a self-assembled nonionic surfactant, hexadecylglyceryl maleate. The hydrogels appear iridescent as a result of Bragg’s reflection of visible light from the periodic lamellar plane. The particular lamellar hydrogel with extremely wide water spacing was used as a soft two-dimensional template to synthesize single-crystalline nanosheets in the confined two-dimensional space. As a consequence, flexible, ultrathin and large area single-crystalline gold membranes with atomically flat surface were produced in the hydrogel. The optical and electrical properties were detected on a single gold membrane.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Well-Defined Nanostructured, Single-Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells.

PubMed

Choi, Jongmin; Song, Seulki; Hörantner, Maximilian T; Snaith, Henry J; Park, Taiho

2016-06-28

An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution-processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

NASA Astrophysics Data System (ADS)

Seifarth, O.; Dietrich, B.; Zaumseil, P.; Giussani, A.; Storck, P.; Schroeder, T.

2010-10-01

Strained and relaxed single crystalline Si on insulator systems is an important materials science approach for future Si-based nanoelectronics. Layer transfer techniques are the dominating global integration approach over the whole wafer system but are difficult to scale down for local integration purposes limited to the area of the future device. In this respect, the heteroepitaxy approach by two simple subsequent epitaxial deposition steps of the oxide and the Si thin film is a promising way. We introduce tailored (Pr2O3)1-x(Y2O3)x oxide heterostructures on Si(111) as flexible heteroepitaxy concept for the integration of either strained or fully relaxed single crystalline Si thin films. Two different buffer concepts are explored by a combined experimental and theoretical study. First, the growth of fully relaxed single crystalline Si films is achieved by the growth of mixed PrYO3 insulators on Si(111) whose lattice constant is matched to Si. Second, isomorphic oxide-on-oxide epitaxy is exploited to grow strained Si films on lattice mismatched Y2O3/Pr2O3/Si(111) support systems. A thickness dependent multilayer model, based on Matthew's approach for strain relaxation by misfit dislocations, is presented to describe the experimental data.

In Situ Study of Silicon Electrode Lithiation with X-ray Reflectivity

DOE PAGES

Cao, Chuntian; Steinrück, Hans-Georg; Shyam, Badri; ...

2016-10-26

Surface sensitive X-ray reflectivity (XRR) measurements were performed to investigate the electrochemical lithiation of a native oxide terminated single crystalline silicon (100) electrode in real time during the first galvanostatic discharge cycle. This allows us to gain nanoscale, mechanistic insight into the lithiation of Si and the formation of the solid electrolyte interphase (SEI). We describe an electrochemistry cell specifically designed for in situ XRR studies and have determined the evolution of the electron density profile of the lithiated Si layer (Li xSi) and the SEI layer with subnanometer resolution. We propose a three-stage lithiation mechanism with a reaction limited,more » layer-by-layer lithiation of the Si at the Li xSi/Si interface.« less

Abrasion and deformed layer formation of manganese-zinc ferrite in sliding contact with lapping tapes

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Tanaka, K.

1986-01-01

Wear experiments were conducted using replication electron microscopy and reflection electron diffraction to study abrasion and the deformed layers produced in single-crystal Mn-Zn ferrite simulated heads during contact with lapping tapes. The crystaline state of the head is changed drastically during the abrasion process. Crystalline states ranging from nearly amorphous to highly textured polycrystalline can be produced on the wear surface of a single-crystal Mn-Zn ferrite head. The total thickness of the deformed layer was approximately 0.8 microns. This thickness increased as the load and abrasive grit size increased. The anisotropic wear of the ferrite was found to be inversely proportional to the hardness of the wear surface. The wear was lower in the order 211 111 10 0110. The wear of the ferrite increased markedly with an increase in sliding velocity and abrasive grit size.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Dan; Sun, Fu-He; Wei, Chang-Chun; Sun, Jian; Zhang, De-Kun; Geng, Xin-Hua; Xiong, Shao-Zhen; Zhao, Ying

2009-10-01

This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

Surface nanoporosity has a greater influence on osteogenic and bacterial cell adhesion than crystallinity and wettability

NASA Astrophysics Data System (ADS)

Rodriguez-Contreras, Alejandra; Guadarrama Bello, Dainelys; Nanci, Antonio

2018-07-01

There has been much emphasis on the influence of crystallinity and wettability for modulating cell activity, particularly for bone biomaterials. In this context, we have generated titanium oxide layers with similar mesoporous topography and surface roughness but with amorphous or crystalline oxide layers and differential wettability. We then investigated their influence on the behavior of MC3T3 osteoblastic and bacterial cells. There was no difference in cell adhesion, spreading and growth on amorphous and crystalline surfaces. The number of focal adhesions was similar, however, cells on the amorphous surface exhibited a higher frequency of mature adhesions. The crystallinity of the surface layers also had no bearing on bacterial adhesion. While it cannot be excluded that surface crystallinity, roughness and wettability contribute to some degree to determining cell behavior, our data suggest that physical characteristics of surfaces represent the major determinant.

Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carretero-Genevrier, Adrian; Oro-Sole, Judith; Gazquez, Jaume

2013-12-13

We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr 2+- or Ba 2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartzmore » thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.« less

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

NASA Astrophysics Data System (ADS)

Bragaglia, Valeria; Mio, Antonio M.; Calarco, Raffaella

2017-08-01

A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

PubMed

Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

2015-09-02

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

DOE PAGES

Lu, Di; Baek, David J.; Hong, Seung Sae; ...

2016-09-12

Here, the ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals 1, 2, 3, 4, 5, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality 6, 7, 8, 9 and emergent phenomena, as seen in perovskite heterostructures 10, 11, 12. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general methodmore » to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds 13, 14.« less

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

NASA Technical Reports Server (NTRS)

Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

1991-01-01

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

Crystalline Membranes

NASA Technical Reports Server (NTRS)

Tsapatsis, Michael (Inventor); Lai, Zhiping (Inventor)

2008-01-01

In certain aspects, the invention features methods for forming crystalline membranes (e.g., a membrane of a framework material, such as a zeolite) by inducing secondary growth in a layer of oriented seed crystals. The rate of growth of the seed crystals in the plane of the substrate is controlled to be comparable to the rate of growth out of the plane. As a result, a crystalline membrane can form a substantially continuous layer including grains of uniform crystallographic orientation that extend through the depth of the layer.

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

DOEpatents

Pankove, J.I.; Wu, C.P.

1982-03-30

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

DOEpatents

Pankove, Jacques I.; Wu, Chung P.

1982-01-01

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Layered Structure and Swelling Behavior of a Multiple Hydrate-Forming Pharmaceutical Compound

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiang, Y.; Xu, W; Stephens, P

2009-01-01

Investigation of one anhydrous and four hydrated forms of a pharmaceutical compound (1) using both single-crystal and high-resolution powder X-ray diffraction methods revealed a two-dimensional framework which, upon exposure to moisture, absorbed water between the layers, causing the lattice to expand by as much as 20% of the axial length along a. The single-crystal structure was solved and refined for the pentahydrate form in space group C2 with unit cell parameters a = 36.961(5) Angstroms, b = 7.458(2) Angstroms, c = 20.691(4) Angstroms, e = 99.461(1), and V = 5626(4) Angstroms3. In the single-crystal structure the water layers were parallelmore » to the bc plane and sandwiched by the crystalline compound 1 framework. Upon a change of relative humidity, water goes in and out of the interlayer space with the retention of the layer structure of the development compound. Starting from the anhydrous form, each additional water of hydration increased the interlayer spacing of the pharmaceutical solid by 1.3 Angstroms, half the size of a water molecule. In an exploratory formulation, this expansion of interlayer spacing caused tablets to crack upon storage at high relative humidity.« less

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE PAGES

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; ...

2017-02-10

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Takata, Fumiya; Gushi, Toshiki; Anzai, Akihito; Toko, Kaoru; Suemasu, Takashi

2018-03-01

We grow MnAl films on different underlayers by molecular beam epitaxy (MBE), and investigate their structural and magnetic properties. L10-ordered MnAl films were successfully grown both on an MgO(0 0 1) single-crystalline substrate and on an Mn4N(0 0 1) buffer layer formed on MgO(0 0 1) and SrTiO3(0 0 1) substrates. For the MgO substrate, post rapid thermal annealing (RTA) drastically improved the crystalline quality and the degree of L10-ordering, whereas no improvement in the crystallinity was achieved by altering the substrate temperature (TS) during MBE growth. However, high-quality L10-MnAl films were formed on the Mn4N buffer layer by simply varying TS. Structural analysis using X-ray diffraction showed MnAl on an MgO substrate had a cubic structure whereas MnAl on the Mn4N buffer had a tetragonal structure. This difference in crystal structure affected the magnetic properties of the MnAl films. The uniaxial magnetic anisotropy constant (Ku) was drastically improved by inserting an Mn4N buffer layer. We achieved a perpendicular magnetic anisotropy of Ku = 5.0 ± 0.7 Merg/cm3 for MnAl/Mn4N film on MgO and 6.0 ± 0.2 Merg/cm3 on STO. These results suggest that Mn4N has potential as an underlayer for L10-MnAl.

Effects of wear on structure-sensitive magnetic properties of ceramic ferrite in contact with magnetic tape

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Tanaka, K.

1985-01-01

Wear experiments and electron microscopy and diffraction studies were conducted to examine the wear and deformed layers in single-crystal Mn-Zn (ceramic) ferrite magnetic head material in contact with magnetic tape and the effects of that contact on magnetic properties. The crystalline state of the single-crystal magnetic head was changed drastically during the sliding process. A nearly amorphous structure was produced on its wear surface. Deformation in the surficial layer of the magnetic head was a critical factor in readback signal loss above 2.5 dB. The signal output level was reduced as applied normal load was increased. Considerable plastic flow occurred on the magnetic tape surface with sliding, and the signal loss due to the tape wear was approximately 1 dB.

Confined crystallization, crystalline phase deformation and their effects on the properties of crystalline polymers

NASA Astrophysics Data System (ADS)

Wang, Haopeng

With the recent advances in processing and catalyst technology, novel morphologies have been created in crystalline polymers and they are expected to substantially impact the properties. To reveal the structure-property relationships of some of these novel polymeric systems becomes the primary focus of this work. In the first part, using an innovative layer-multiplying coextrusion process to obtain assemblies with thousands of polymer nanolayers, dominating "in-plane" lamellar crystals were created when the confined poly(ethylene oxide) (PEO) layers were made progressively thinner. When the thickness was confined to 25 nanometers, the PEO crystallized as single, high-aspect-ratio lamellae that resembled single crystals. This crystallization habit imparted more than two orders of magnitude reduction in the gas permeability. The dramatic decrease in gas permeability was attributed to the reduced diffusion coefficient, because of the increase in gas diffusion path length through the in-plane lamellae. The temperature dependence of lamellar orientation and the crystallization kinetics in the confined nanolayers were also investigated. The novel olefinic block copolymer (OBC) studied in the second part consisted of long crystallizable sequences with low comonomer content alternating with rubbery amorphous blocks with high comonomer content. The crystallizable blocks formed lamellae that organized into space-filling spherulites even when the fraction of crystallizable block was so low that the crystallinity was only 7%. These unusual spherulites were highly elastic and recovered from strains as high as 300%. These "elastic spherulites" imparted higher strain recovery and temperature resistance than the conventional random copolymers that depend on isolated, fringed micellar-like crystals to provide the junctions for the elastomeric network. In the third part, positron annihilation lifetime spectroscopy (PALS) was used to obtain the temperature dependence of the free volume hole size in propylene/ethylene copolymers over a range in comonomer content. Above the glass transition temperature (Tg), the reduced free volume hole size and the densification of the amorphous phase were attributed to constraint imposed on rubbery amorphous chain segments by attached chain segments in crystals. However constant free volume fraction was found at Tg, across the crystallinity range of the copolymers, in agreement with the iso-free volume concept of glass transition.

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

PubMed

Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

PubMed

Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

2017-11-08

In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

Mechanical properties of electrospun bilayer fibrous membranes as potential scaffolds for tissue engineering.

PubMed

Pu, Juan; Komvopoulos, Kyriakos

2014-06-01

Bilayer fibrous membranes of poly(l-lactic acid) (PLLA) were fabricated by electrospinning, using a parallel-disk mandrel configuration that resulted in the sequential deposition of a layer with fibers aligned across the two parallel disks and a layer with randomly oriented fibers, both layers deposited in a single process step. Membrane structure and fiber alignment were characterized by scanning electron microscopy and two-dimensional fast Fourier transform. Because of the intricacies of the generated electric field, bilayer membranes exhibited higher porosity than single-layer membranes consisting of randomly oriented fibers fabricated with a solid-drum collector. However, despite their higher porosity, bilayer membranes demonstrated generally higher elastic modulus, yield strength and toughness than single-layer membranes with random fibers. Bilayer membrane deformation at relatively high strain rates comprised multiple abrupt microfracture events characterized by discontinuous fiber breakage. Bilayer membrane elongation yielded excessive necking of the layer with random fibers and remarkable fiber stretching (on the order of 400%) in the layer with fibers aligned in the stress direction. In addition, fibers in both layers exhibited multiple localized necking, attributed to the nonuniform distribution of crystalline phases in the fibrillar structure. The high membrane porosity, good mechanical properties, and good biocompatibility and biodegradability of PLLA (demonstrated in previous studies) make the present bilayer membranes good scaffold candidates for a wide range of tissue engineering applications. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth

PubMed Central

2017-01-01

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble. PMID:28356613

Discovery of Cellulose Surface Layer Conformation by Nonlinear Vibrational Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Libing; Fu, Li; Wang, Hong-fei

2017-03-14

Significant questions remain with respect to the structure and polymorphs of cellulose. These include the cellulose surface layers and the bulk crystalline core as well as the conformational differences. The Total Internal Reflection Sum Frequency Generation Vibrational Spectroscopy (TIR-SFG-VS) combined with the conventional SFG-VS (non-TIR) can help to resolve these questions by selectively characterizing the molecular structures of surface layers and the crystalline core of cellulose. From the SFG spectra in the C-H and O-H regions, we found that the surface layers of Avicel are essentially amorphous; while the surface layers of Iβ cellulose are crystalline but with different structuralmore » and spectroscopic signatures than that of its crystalline core. This work demonstrates the capacity of TIR and Non-TIR SFG-VS tools in selectively studying the structures and polymorphs of cellulose. In addition, these results also suggest that the assignments of major vibrational peaks for cellulose need to be further determined.« less

Enhanced efficiency and stability of inverted perovskite solar cells using highly crystalline SnO 2 nanocrystals as the robust electron-transporting layer

DOE PAGES

Zhu, Zonglong; Bai, Yang; Liu, Xiao; ...

2016-05-11

Here highly crystalline SnO 2 is demonstrated to serve as a stable and robust electron-transporting layer for high-performance perovskite solar cells. Benefiting from its high crystallinity, the relatively thick SnO 2 electron-transporting layer (≈120 nm) provides a respectable electron-transporting property to yield a promising power conversion efficiency (PCE)(18.8%) Over 90% of the initial PCE can be retained after 30 d storage in ambient with ≈70% relative humidity.

Research in the Optical Sciences

DTIC Science & Technology

1994-02-01

Gain Asymmetry and the Generation of New Frequencies2 "’ When a stable coherent beam is injected into a VCSEL that is lasing just above threshold, we... optical microscope was developed and tested. High quality single-crystal layers of beryllium were grown on germanium by molecular beam epitaxy (MBE... OPTICAL ELEWENTS FOR X-UV WAVELENGTHS FALCO AND SLAUGHTEM indicate an increase in crystalline quality as T is increased. However, samples deposited at

Single-Crystalline Ultrathin Co 3O 4 Nanosheets with Massive Vacancy Defects for Enhanced Electrocatalysis

DOE PAGES

Cai, Zhao; Bi, Yongmin; Hu, Enyuan; ...

2017-09-18

The role of vacancy defects is demonstrated to be positive in various energy-related processes. However, introducing vacancy defects into single-crystalline nanostructures with given facets and studying their defect effect on electrocatalytic properties remains a great challenge. Here this paper deliberately introduces oxygen defects into single-crystalline ultrathin Co 3O 4 nanosheets with O-terminated {111} facets by mild solvothermal reduction using ethylene glycol under alkaline condition. As-prepared defect-rich Co 3O 4 nanosheets show a low overpotential of 220 mV with a small Tafel slope of 49.1 mV dec -1 for the oxygen evolution reaction (OER), which is among the best Co-based OERmore » catalysts to date and even more active than the state-of-the-art IrO 2 catalyst. Such vacancy defects are formed by balancing with reducing environments under solvothermal conditions, but are surprisingly stable even after 1000 cycles of scanning under OER working conditions. Density functional theory plus U calculation attributes the enhanced performance to the oxygen vacancies and consequently exposed second-layered Co metal sites, which leads to the lowered OER activation energy of 2.26 eV and improved electrical conductivity. Finally, this mild solvothermal reduction concept opens a new door for the understanding and future designing of advanced defect-based electrocatalysts.« less

Scalable ferroelectric MOS capacitors comprised of single crystalline SrZrxTi1-xO3 on Ge.

NASA Astrophysics Data System (ADS)

Moghadam, Reza; Xiao, Z.-Y.; Ahmadi-Majlan, K.; Grimley, E.; Ong, P. V.; Lebeau, J. M.; Chambers, S. A.; Hong, X.; Sushko, P.; Ngai, J. H.

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to field-effect devices that require very little power to operate, or that possess both logic and memory functionalities. The development of metal-oxide-semiconductor (MOS) capacitors in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel is essential in order to realize such field-effect devices. Here we demonstrate that scalable, ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. Single crystalline SrZrxTi1-xO3 exhibits characteristics that are ideal for a ferroelectric gate material, namely, a type-I band offset with respect to Ge, large coercive fields and polarization that can be enhanced with electric field. The latter characteristic stems from the relaxor nature of SrZrxTi1-xO3. These properties enable MOS capacitors with 5 nm thick SrZrxTi1-xO3 layers to exhibit a nearly 2 V wide hysteretic window in the capacitance-voltage characteristics. The realization of ferroelectric MOS capacitors with technologically relevant gate thicknesses opens the pathway to practical field effect devices. NSF DMR 1508530.

Single-Crystalline Ultrathin Co 3O 4 Nanosheets with Massive Vacancy Defects for Enhanced Electrocatalysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Zhao; Bi, Yongmin; Hu, Enyuan

The role of vacancy defects is demonstrated to be positive in various energy-related processes. However, introducing vacancy defects into single-crystalline nanostructures with given facets and studying their defect effect on electrocatalytic properties remains a great challenge. Here this paper deliberately introduces oxygen defects into single-crystalline ultrathin Co 3O 4 nanosheets with O-terminated {111} facets by mild solvothermal reduction using ethylene glycol under alkaline condition. As-prepared defect-rich Co 3O 4 nanosheets show a low overpotential of 220 mV with a small Tafel slope of 49.1 mV dec -1 for the oxygen evolution reaction (OER), which is among the best Co-based OERmore » catalysts to date and even more active than the state-of-the-art IrO 2 catalyst. Such vacancy defects are formed by balancing with reducing environments under solvothermal conditions, but are surprisingly stable even after 1000 cycles of scanning under OER working conditions. Density functional theory plus U calculation attributes the enhanced performance to the oxygen vacancies and consequently exposed second-layered Co metal sites, which leads to the lowered OER activation energy of 2.26 eV and improved electrical conductivity. Finally, this mild solvothermal reduction concept opens a new door for the understanding and future designing of advanced defect-based electrocatalysts.« less

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

NASA Astrophysics Data System (ADS)

Li, Minghua; Shi, Hui; Dong, Yuegang; Ding, Lei; Han, Gang; Zhang, Yao; Liu, Ye; Yu, Guanghua

2017-10-01

The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB layer. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 °C. More importantly, a single NiFe (1 1 1) peak can be formed resulting in higher AMR values for films having CoFeB layer. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties.

Complex Pattern Formation from Current-Driven Dynamics of Single-Layer Homoepitaxial Islands on Crystalline Conducting Substrates

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Dasgupta, Dwaipayan; Maroudas, Dimitrios

2017-07-01

We report a systematic study of complex pattern formation resulting from the driven dynamics of single-layer homoepitaxial islands on surfaces of face-centered-cubic (fcc) crystalline conducting substrates under the action of an externally applied electric field. The analysis is based on an experimentally validated nonlinear model of mass transport via island edge atomic diffusion, which also accounts for edge diffusional anisotropy. We analyze the morphological stability and simulate the field-driven evolution of rounded islands for an electric field oriented along the fast edge diffusion direction. For larger-than-critical island sizes on {110 } and {100 } fcc substrates, we show that multiple necking instabilities generate complex island patterns, including not-simply-connected void-containing islands mediated by sequences of breakup and coalescence events and distributed symmetrically with respect to the electric field direction. We analyze the dependence of the formed patterns on the original island size and on the duration of application of the external field. Starting from a single large rounded island, we characterize the evolution of the number of daughter islands and their average size and uniformity. The evolution of the average island size follows a universal power-law scaling relation, and the evolution of the total edge length of the islands in the complex pattern follows Kolmogorov-Johnson-Mehl-Avrami kinetics. Our study makes a strong case for the use of electric fields, as precisely controlled macroscopic forcing, toward surface patterning involving complex nanoscale features.

Tunable terahertz radiation source

DOEpatents

Boulaevskii, Lev; Feldmann, David M; Jia, Quanxi; Koshelev, Alexei; Moody, Nathan A

2014-01-21

Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots

NASA Astrophysics Data System (ADS)

Groiss, Heiko; Spindlberger, Lukas; Oberhumer, Peter; Schäffler, Friedrich; Fromherz, Thomas; Grydlik, Martyna; Brehm, Moritz

2017-02-01

In this work, we show that the room-temperature photoluminescence intensity from Ge ion-bombarded (GIB) epitaxial Ge on Si quantum dots (QD) can be improved by their vertical stacking. We stress that the growth of GIB-QD multilayers is more demanding compared to all-crystalline epitaxial QDs, as a consequence of local amorphous regions within the GIB-QDs required during their genesis. We show that in spite of those amorphous regions, for accurately chosen growth temperatures of the Si spacer layers separating the GIB-QD layers, multiple GIB-QD layers can be stacked without detrimental break-down of epitaxial growth. Compared to a single GIB-QD layer, we observe a 650% increase in PL intensity for an eleven-layer GIB-QD stack, indicating that such multilayers are promising candidates as gain material for all-group-IV nano-photonic lasers.

Different Conformations of Surface Cellulose Molecules in Native Cellulose Microfibrils Revealed by Layer-by-Layer Peeling.

PubMed

Funahashi, Ryunosuke; Okita, Yusuke; Hondo, Hiromasa; Zhao, Mengchen; Saito, Tsuguyuki; Isogai, Akira

2017-11-13

Layer-by-layer peeling of surface molecules of native cellulose microfibrils was performed using a repeated sequential process of 2,2,6,6-tetramethylpiperidine-1-oxyl radical-mediated oxidation followed by hot alkali extraction. Both highly crystalline algal and tunicate celluloses and low-crystalline cotton and wood celluloses were investigated. Initially, the C6-hydroxy groups of the outermost surface molecules of each algal cellulose microfibril facing the exterior had the gauche-gauche (gg) conformation, whereas those facing the interior had the gauche-trans (gt) conformation. All the other C6-hydroxy groups of the cellulose molecules inside the microfibrils contributing to crystalline cellulose I had the trans-gauche (tg) conformation. After surface peeling, the originally second-layer molecules from the microfibril surface became the outermost surface molecules, and the original tg conformation changed to gg and gt conformations. The plant cellulose microfibrils likely had disordered structures for both the outermost surface and second-layer molecules, as demonstrated using the same layer-by-layer peeling technique.

Surface properties of atomically flat poly-crystalline SrTiO3

PubMed Central

Woo, Sungmin; Jeong, Hoidong; Lee, Sang A.; Seo, Hosung; Lacotte, Morgane; David, Adrian; Kim, Hyun You; Prellier, Wilfrid; Kim, Yunseok; Choi, Woo Seok

2015-01-01

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding the TMO domains and grain boundaries. PMID:25744275

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Increasing low frequency sound attenuation using compounded single layer of sonic crystal

NASA Astrophysics Data System (ADS)

Gulia, Preeti; Gupta, Arpan

2018-05-01

Sonic crystals (SC) are man-made periodic structures where sound hard scatterers are arranged in a crystalline manner. SC reduces noise in a particular range of frequencies called as band gap. Sonic crystals have a promising application in noise shielding; however, the application is limited due to the size of structure. Particularly for low frequencies, the structure becomes quite bulky, restricting its practical application. This paper presents a compounded model of SC, which has the same overall area and filling fraction but with increased low frequency sound attenuation. Two cases have been considered, a three layer SC and a compounded single layer SC. Both models have been analyzed using finite element simulation and plane wave expansion method. Band gaps for periodic structures have been obtained using both methods which are in good agreement. Further, sound transmission loss has been evaluated using finite element method. The results demonstrate the use of compounded model of Sonic Crystal for low frequency sound attenuation.

Novel Investigation on Nanostructured Multilayer and Functionally Graded Ni-P Electroless Coatings on Stainless Steel

NASA Astrophysics Data System (ADS)

Anvari, S. R.; Monirvaghefi, S. M.; Enayati, M. H.

2015-06-01

In this study, step-wise multilayer and functionally graded Ni-P coatings were deposited with electroless in which the content of phosphorus and nickel would be changed gradually and step-wise through the thickness of the coatings, respectively. To compare the properties of these coatings with Ni-P single-layer coatings, three types of coatings with different phosphorus contents were deposited. Heat treatment of coatings was performed at 400 °C for 1 h. The microstructure and phase transformation of coatings were characterized by SEM/EDS, TEM, and XRD. The mechanical properties of coatings were studied by nanoindentation test. According to the results of the single-layer coatings, low P coating had the maximum hardness and also the ratio of hardness ( H) to elasticity modulus ( E) for the mentioned coating was maximum. In addition, low and medium P coatings had crystalline and semi-crystalline structure, respectively. The mentioned coatings had <111> texture and after heat treatment their texture didn't change. While high P coating had amorphous structure, after heat treatment it changed to crystalline structure with <100> texture for nickel grains. Furthermore, the results showed that functionally graded and step-wise multilayer coatings were deposited successfully by using the same initial bath and changing the temperature and pH during deposition. Nanoindentation test results showed that the hardness of the mentioned coatings changed from 670 Hv near the substrate to 860 Hv near the top surface of coatings. For functionally graded coating the hardness profile had gradual changes, while step-wise multilayer coating had step-wise hardness profile. After heat treatment trend of hardness profiles was changed, so that near the substrate, hardness was measured 1400 Hv and changed to 1090 Hv at the top coat.

Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

NASA Astrophysics Data System (ADS)

Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

2018-05-01

The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs(001)

NASA Astrophysics Data System (ADS)

Chen, L.; Mankovsky, S.; Wimmer, S.; Schoen, M. A. W.; Körner, H. S.; Kronseder, M.; Schuh, D.; Bougeard, D.; Ebert, H.; Weiss, D.; Back, C. H.

2018-05-01

As a fundamental parameter in magnetism, the phenomenological Gilbert damping constant α determines the performance of many spintronic devices. For most magnetic materials, α is treated as an isotropic parameter entering the Landau-Lifshitz-Gilbert equation. However, could the Gilbert damping be anisotropic? Although several theoretical approaches have suggested that anisotropic α could appear in single-crystalline bulk systems, experimental evidence of its existence is scarce. Here, we report the emergence of anisotropic magnetic damping by exploring a quasi-two-dimensional single-crystalline ferromagnetic metal/semiconductor interface—that is, a Fe/GaAs(001) heterojunction. The observed anisotropic damping shows twofold C2v symmetry, which is expected from the interplay of interfacial Rashba and Dresselhaus spin-orbit interaction, and is manifested by the anisotropic density of states at the Fe/GaAs (001) interface. This discovery of anisotropic damping will enrich the understanding of magnetization relaxation mechanisms and can provide a route towards the search for anisotropic damping at other ferromagnetic metal/semiconductor interfaces.

Temperature dependent exchange bias training effect in single-crystalline BiFeO{sub 3}/Co bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, M. C.; You, B.; Tu, H. Q.

2015-05-07

Single-crystalline BiFeO{sub 3} (BFO)/Co bilayers were prepared by combined pulsed laser deposition and magnetron sputtering on (001) SrTiO{sub 3} substrates. Exchange bias (EB) and accompanying training effect have been studied as a function of temperature (T) between 5 K and 300 K. A non-monotonic exchange field variation with sharp increase below 100 K has been observed. In the meanwhile, strong training effect was recorded when T < 100 K and it weakens monotonically with increasing T up to 300 K. These temperature dependent EB and training effect may be caused by the uncompensated spins in both the interfacial spin-glass (SG) phase at low temperature and the antiferromagneticmore » BFO layer at higher temperature. The low temperature EB training results can be well fitted by a modified Binek's model considering asymmetric changes of the pinning SG spins at the descending and the ascending branches.« less

Automatic software correction of residual aberrations in reconstructed HRTEM exit waves of crystalline samples

DOE PAGES

Ophus, Colin; Rasool, Haider I.; Linck, Martin; ...

2016-11-30

We develop an automatic and objective method to measure and correct residual aberrations in atomic-resolution HRTEM complex exit waves for crystalline samples aligned along a low-index zone axis. Our method uses the approximate rotational point symmetry of a column of atoms or single atom to iteratively calculate a best-fit numerical phase plate for this symmetry condition, and does not require information about the sample thickness or precise structure. We apply our method to two experimental focal series reconstructions, imaging a β-Si 3N 4 wedge with O and N doping, and a single-layer graphene grain boundary. We use peak and latticemore » fitting to evaluate the precision of the corrected exit waves. We also apply our method to the exit wave of a Si wedge retrieved by off-axis electron holography. In all cases, the software correction of the residual aberration function improves the accuracy of the measured exit waves.« less

Large-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD.

PubMed

Ge, Wanyin; Kawahara, Kenji; Tsuji, Masaharu; Ago, Hiroki

2013-07-07

We report ambient pressure chemical vapor deposition (CVD) growth of single-crystalline NbS2 nanosheets with controlled orientation. On Si and SiO2 substrates, NbS2 nanosheets grow almost perpendicular to the substrate surface. However, when we apply transferred CVD graphene on SiO2 as a substrate, NbS2 sheets grow laterally lying on the graphene. The NbS2 sheets show the triangular and hexagonal shapes with a thickness of about 20-200 nm and several micrometres in the lateral dimension. Analyses based on X-ray diffraction and Raman spectroscopy indicate that the NbS2 nanosheets are single crystalline 3R-type with a rhombohedral structure of R3m space group. Our findings on the formation of highly aligned NbS2 nanosheets on graphene give new insight into the formation mechanism of NbS2 and would contribute to the templated growth of various layered materials.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.

PubMed

Moghadam, Reza M; Xiao, Zhiyong; Ahmadi-Majlan, Kamyar; Grimley, Everett D; Bowden, Mark; Ong, Phuong-Vu; Chambers, Scott A; Lebeau, James M; Hong, Xia; Sushko, Peter V; Ngai, Joseph H

2017-10-11

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZr x Ti 1-x O 3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZr x Ti 1-x O 3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

Automatic software correction of residual aberrations in reconstructed HRTEM exit waves of crystalline samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ophus, Colin; Rasool, Haider I.; Linck, Martin

We develop an automatic and objective method to measure and correct residual aberrations in atomic-resolution HRTEM complex exit waves for crystalline samples aligned along a low-index zone axis. Our method uses the approximate rotational point symmetry of a column of atoms or single atom to iteratively calculate a best-fit numerical phase plate for this symmetry condition, and does not require information about the sample thickness or precise structure. We apply our method to two experimental focal series reconstructions, imaging a β-Si 3N 4 wedge with O and N doping, and a single-layer graphene grain boundary. We use peak and latticemore » fitting to evaluate the precision of the corrected exit waves. We also apply our method to the exit wave of a Si wedge retrieved by off-axis electron holography. In all cases, the software correction of the residual aberration function improves the accuracy of the measured exit waves.« less

Determination of the spin Hall angle in single-crystalline Pt films from spin pumping experiments

NASA Astrophysics Data System (ADS)

Keller, Sascha; Mihalceanu, Laura; Schweizer, Matthias R.; Lang, Philipp; Heinz, Björn; Geilen, Moritz; Brächer, Thomas; Pirro, Philipp; Meyer, Thomas; Conca, Andres; Karfaridis, Dimitrios; Vourlias, George; Kehagias, Thomas; Hillebrands, Burkard; Papaioannou, Evangelos Th

2018-05-01

We report on the determination of the spin Hall angle in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t Pt) bilayers we determine the real part of the spin mixing conductance (4.4 ± 0.2) × 1019 m‑2 and reveal a very small spin diffusion length in the epitaxial Pt (1.1 ± 0.1) nm film. We investigate the spin pumping and ISHE in a stripe microstucture excited by a microwave coplanar waveguide antenna. By using their different angular dependencies, we distinguish between spin rectification effects and the inverse spin Hall effect. The relatively large value of the spin Hall angle (5.7 ± 1.4)% shows that ultra-clean e-beam evaporated non-magnetic materials can also have a comparable spin-to-charge current conversion efficiency as sputtered high resistivity layers.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Temperature Oscillation Modulated Self-Assembly of Periodic Concentric Layered Magnesium Carbonate Microparticles

PubMed Central

Li, Shihong; Wang, Zheng Jim; Chang, Ting-Tung

2014-01-01

Intriguing patterns of periodic, concentric, layered, mineral microstructure are present in nature and organisms, yet they have elusive geneses. We hypothesize temperature oscillation can be an independent factor that causes the self-assembly of such patterns in mineral phases synthesized in solution. Static experiments verify that rhythmic concentric multi-layered magnesium carbonate microhemispheres can be synthesized from bicarbonate solution by temperature oscillation, without use of a chemical template, additive or gel-diffusion system. Appropriate reactant concentration and initial pH value can restrain the competitive growth of other mineral generations. Polarized light microscopy images indicate the microhemispheres are crystalline and the crystallinity increases with incubation time. The thickness of a single mineral layer of microhemisphere in microscale is precisely controlled by the waveform parameters of the temperature oscillation, while the layer number, which can reach tens to about one hundred, is constrained by the temperature oscillation period number. FT-IR spectra show that these microhemispheres synthesized under different conditions can be identified as the basic form of magnesium carbonate, hydromagnesite (Mg5(CO3)4(OH)2⋅4H2O). SEM images exhibit the characteristic microscopic texture of the alternating dark and light rings of these microhemispheres. TEM images and ED patterns suggest the nanoflakes of microhemispheres are present in polycrystalline form with some degree of oriented assembly. The temperature oscillation modulated self-assembly may offer a new mechanism to understand the formation of layered microstructure of minerals in solution, and provide a non-invasive and programmable means to synthesize hierarchically ordered materials. PMID:24520410

Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS.

PubMed

Li, Chun; Huang, Liang; Snigdha, Gayatri Pongur; Yu, Yifei; Cao, Linyou

2012-10-23

We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

Co-delivery of ibuprofen and gentamicin from nanoporous anodic titanium dioxide layers.

PubMed

Pawlik, Anna; Jarosz, Magdalena; Syrek, Karolina; Sulka, Grzegorz D

2017-04-01

Although single-drug therapy may prove insufficient in treating bacterial infections or inflammation after orthopaedic surgeries, complex therapy (using both an antibiotic and an anti-inflammatory drug) is thought to address the problem. Among drug delivery systems (DDSs) with prolonged drug release profiles, nanoporous anodic titanium dioxide (ATO) layers on Ti foil are very promising. In the discussed research, ATO samples were synthesized via a three-step anodization process in an ethylene glycol-based electrolyte with fluoride ions. The third step lasted 2, 5 and 10min in order to obtain different thicknesses of nanoporous layers. Annealing the as-prepared amorphous layers at the temperature of 400°C led to obtaining the anatase phase. In this study, water-insoluble ibuprofen and water-soluble gentamicin were used as model drugs. Three different drug loading procedures were applied. The desorption-desorption-diffusion (DDD) model of the drug release was fitted to the experimental data. The effects of crystalline structure, depth of TiO 2 nanopores and loading procedure on the drug release profiles were examined. The duration of the drug release process can be easily altered by changing the drug loading sequence. Water-soluble gentamicin is released for a long period of time if gentamicin is loaded in ATO as the first drug. Additionally, deeper nanopores and anatase phase suppress the initial burst release of drugs. These results confirm that factors such as morphological and crystalline structure of ATO layers, and the procedure of drug loading inside nanopores, allow to alter the drug release performance of nanoporous ATO layers. Copyright © 2017 Elsevier B.V. All rights reserved.

Sol-gel-Derived nano-sized double layer anti-reflection coatings (SiO2/TiO2) for low-cost solar cell fabrication.

PubMed

Lee, Seung Jun; Hur, Man Gyu; Yoon, Dae Ho

2013-11-01

We investigate nano-sized double layer anti-reflection coatings (ARCs) using a TiO2 and SiO2 sol-gel solution process for mono-crystalline silicon solar cells. The process can be easily adapted for spraying sol-gel coatings to reduce manufacturing cost. The spray-coated SiO2/TiO2 nano-sized double layer ARCs were deposited on mono-crystalline silicon solar cells, and they showed good optical properties. The spray coating process is a lower-cost fabrication process for large-scale coating than vacuum deposition processes such as PECVD. The measured average optical reflectance (300-1200 nm) was about approximately 8% for SiO2/TiO2 nano-sized double layer ARCs. The electrical parameters of a mono-crystalline silicon solar cell and reflection losses show that the SiO2/TiO2 stacks can improve cell efficiency by 0.2% compared to a non-coated mono-crystalline silicon solar cell. In the results, good correlation between theoretical and experimental data was obtained. We expect that the sol-gel spray-coated mono-crystalline silicon solar cells have high potential for low-cost solar cell fabrication.

Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

PubMed

Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

2017-07-25

An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges

NASA Astrophysics Data System (ADS)

Yeom, Bongjun; Char, Kookheon

2016-06-01

Laminated nanostructures in nacre have been adopted as models in the fabrication of strong, tough synthetic nanocomposites. However, the utilization of CaCO3 biominerals in these composites is limited by the complexity of the synthesis method for nanosized biominerals. In this study, we use the enzymatic reaction of urease to generate a nanoscale CaCO3 thin film to prepare CaCO3/polymer hybrid nanolaminates. Additional layers of CaCO3 thin film are consecutively grown over the base CaCO3 layer with the intercalation of organic layers. The morphology and crystallinity of the added CaCO3 layers depend strongly on the thickness of the organic layer coated on the underlying CaCO3 layer. When the organic layer is less than 20 nm thick, the amorphous CaCO3 layer is spontaneously transformed into crystalline calcite layer during the growth process. We also observe crystalline continuity between adjacent CaCO3 layers through interconnecting mineral bridges. The formation of these mineral bridges is crucial to the epitaxial growth of CaCO3 layers, similar to the formation of natural nacre.

Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

PubMed

Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

2013-10-25

Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A neural network based computational model to predict the output power of different types of photovoltaic cells.

PubMed

Xiao, WenBo; Nazario, Gina; Wu, HuaMing; Zhang, HuaMing; Cheng, Feng

2017-01-01

In this article, we introduced an artificial neural network (ANN) based computational model to predict the output power of three types of photovoltaic cells, mono-crystalline (mono-), multi-crystalline (multi-), and amorphous (amor-) crystalline. The prediction results are very close to the experimental data, and were also influenced by numbers of hidden neurons. The order of the solar generation power output influenced by the external conditions from smallest to biggest is: multi-, mono-, and amor- crystalline silicon cells. In addition, the dependences of power prediction on the number of hidden neurons were studied. For multi- and amorphous crystalline cell, three or four hidden layer units resulted in the high correlation coefficient and low MSEs. For mono-crystalline cell, the best results were achieved at the hidden layer unit of 8.

Imaging of Crystalline and Amorphous Surface Regions Using Time-of-Flight Secondary-Ion Mass Spectrometry (ToF-SIMS): Application to Pharmaceutical Materials.

PubMed

Iuraş, Andreea; Scurr, David J; Boissier, Catherine; Nicholas, Mark L; Roberts, Clive J; Alexander, Morgan R

2016-04-05

The structure of a material, in particular the extremes of crystalline and amorphous forms, significantly impacts material performance in numerous sectors such as semiconductors, energy storage, and pharmaceutical products, which are investigated in this paper. To characterize the spatial distribution for crystalline-amorphous forms at the uppermost molecular surface layer, we performed time-of-flight secondary-ion mass spectroscopy (ToF-SIMS) measurements for quench-cooled amorphous and recrystallized samples of the drugs indomethacin, felodipine, and acetaminophen. Polarized light microscopy was used to localize crystallinity induced in the samples under controlled conditions. Principal component analysis was used to identify the subtle changes in the ToF-SIMS spectra indicative of the amorphous and crystalline forms for each drug. The indicators of amorphous and crystalline surfaces were common in type across the three drugs, and could be explained in general terms of crystal packing and intermolecular bonding, leading to intramolecular bond scission in the formation of secondary ions. Less intramolecular scission occurred in the amorphous form, resulting in a greater intensity of molecular and dimer secondary ions. To test the generality of amorphous-crystalline differentiation using ToF-SIMS, a different recrystallization method was investigated where acetaminophen single crystals were recrystallized from supersaturated solutions. The findings indicated that the ability to assign the crystalline/amorphous state of the sample using ToF-SIMS was insensitive to the recrystallization method. This demonstrates that ToF-SIMS is capable of detecting and mapping ordered crystalline and disordered amorphous molecular materials forms at micron spatial resolution in the uppermost surface of a material.

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

ITO/Au/ITO sandwich structure for near-infrared plasmonics.

PubMed

Fang, Xu; Mak, Chee Leung; Dai, Jiyan; Li, Kan; Ye, Hui; Leung, Chi Wah

2014-09-24

ITO/Au/ITO trilayers with varying gold spacer layer thicknesses were deposited on glass substrates by pulsed laser deposition. Transmission electron microscopy measurements demonstrated the continuous nature of the Au layer down to 2.4 nm. XRD patterns clearly showed an enhanced crystallinity of the ITO films promoted by the insertion of the gold layer. Compared with a single layer of ITO with a carrier concentration of 7.12 × 10(20) cm(-3), the ITO/Au/ITO structure achieved an effective carrier concentration as high as 3.26 × 10(22) cm(-3). Transmittance and ellipsometry measurements showed that the optical properties of ITO/Au/ITO films were greatly influenced by the thickness of the inserted gold layer. The cross-point wavelength of the trilayer samples was reduced with increasing gold layer thickness. Importantly, the trilayer structure exhibited a reduced loss (compared with plain Au) in the near-infrared region, suggesting its potential for plasmonic applications in the near-infrared range.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohite, Aditya; Blancon, Jean-Christophe

In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are gaining an extra degree of freedom in designing and fabricating efficient optoelectronic devices based on 2D layered hybrid perovskites. Industrial applications could include low cost solar cells, LEDs, laser diodes, detectors, and other nano-optoelectronic devices. The 2D, near-single-crystalline “Ruddlesden-Popper” thin films have an out-of-plane orientation so that uninhibited charge transport occurs through the perovskite layers in planar devices. The new research finds the existence of “layer-edge-states” at the edges of the perovskite layers which are key to bothmore » high efficiency of solar cells (greater than 12 percent) and high fluorescence efficiency (a few tens of percent) for LEDs. The spontaneous conversion of excitons (bound electron-hole pairs) to free carriers via these layer-edge states appears to be the key to the improvement of the photovoltaic and light-emitting thin film layered materials.« less

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

NASA Astrophysics Data System (ADS)

Park, Young-Bae; Ruglovsky, Jennifer L.; Atwater, Harry A.

2004-07-01

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H + and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90° a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d33, is estimated from PFM to be 80-100pm/V and the coercive electric field (Ec) is 12-20kV/cm, comparable to those in single crystal BaTiO3.

Plastic strain arrangement in copper single crystals in sliding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chumaevskii, Andrey V., E-mail: tch7av@gmail.com; Lychagin, Dmitry V., E-mail: dvl-tomsk@mail.ru; Tarasov, Sergei Yu., E-mail: tsy@ispms.tsc.ru

2014-11-14

Deformation of tribologically loaded contact zone is one of the wear mechanisms in spite of the fact that no mass loss may occur during this process. Generation of optimal crystallographic orientations of the grains in a polycrystalline materials (texturing) may cause hardening and reducing the deformation wear. To reveal the orientation dependence of an individual gain and simplify the task we use copper single crystals with the orientations of the compression axis along [111] and [110]. The plastic deformation was investigated by means of optical, scanning electron microscopy and EBSD techniques. It was established that at least four different zonesmore » were generated in the course of sliding test, such as non-deformed base metal, plastic deformation layer sliding, crystalline lattice reorientation layer and subsurface grain structure layer. The maximum plastic strain penetration depth was observed on [110]-single crystals. The minimum stability of [111]-crystals with respect to rotation deformation mode as well as activation of shear in the sliding contact plane provide for rotation deformation localization below the worn surface. The high-rate accumulation of misorientations and less strain penetration depth was observed on [111]-crystals as compared to those of [110]-oriented ones.« less

Tuning the Assembly of Spherical Nanoparticles in Semicrystalline Polymers

NASA Astrophysics Data System (ADS)

Zhao, Dan; Jestin, Jacques; Zhao, Longxi; Kumar, Sanat K.; Mohammadkhani, Mohammad; Benicewicz, Brian C.

We propose a simple, novel strategy to controlling nanoparticle (NPs) dispersion states in a semi-crystalline polymer matrix exploiting the kinetics of polymer crystallization. The system consists of poly(methyl methacrylate) grafted spherical silica NPs and poly(ethylene oxide) matrices, which are thermodynamically miscible in the melt. We first show that no remarkable change was observed in the spatial dispersion of NPs upon fast crystallization. However, for slow crystallization, both TEM and X-ray/neutron scattering reveal that the system starts to be organized in a ``layer-by-layer'' architecture, where the NPs are aligned in the amorphous phases intercalated by the crystalline lamellar phases. More importantly, we have found that the resulting ``sheet-like'' NP morphology gives rise to a 2-fold increase in the storage modulus but without compromising the fracture toughness of the neat polymer. These results open pathways for creating in-situ biomimetic hierarchical structures with improved mechanical properties through a simple, single-step crystallization processing, which could lead to new applications for this largest class of commercially relevant polymeric materials.

Aminosilane multilayer formed on a single-crystalline diamond surface with controlled nanoscopic hardness and bioactivity by a wet process.

PubMed

Amemiya, Yosuke; Hatakeyama, Akiko; Shimamoto, Nobuo

2009-01-06

Diamond could be an excellent support for nanodevices utilizing biomolecules if it is covered with a polymer layer immobilizing a variety of biomolecules. We report a wet method to form a 3-aminopropyltriethoxysilane (APTES) multilayer with a controlled hardness, roughness, and capacity for immobilizing protein. The method is feasible in typical biochemical laboratories where biomolecules are prepared. Atomic force microscopy (AFM) revealed that the surface geometries and nanoscopic hardness of the multilayers on an oxygen-terminated single-crystalline diamond surface depended on the dielectric constant of the solvent; the smaller the constant, the harder the layer. The hard multilayers had holes and APTES aggregates on the surfaces, while less hard ones had homogeneous surfaces with rare holes and little aggregates. The secondary deposition of APTES in a solvent with a large dielectric constant on a hard multilayer removed the holes, and further treatment of the multilayer in acidic ethanol solution diminished the aggregates. Such a surface can immobilize streptavidin with enough specificity against nonspecific adsorption using a combination of polyethylene glycol reagents. The results of a scratching test and nanoindentation test with AFM provided consistent results, suggesting some universality of the scratching test independent of the tip structure of the cantilever. The mechanism of formation of multilayers on the diamond surface and their binding to it is discussed.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

1989-01-01

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

Deformation sensor based on polymer-supported discontinuous graphene multi-layer coatings

NASA Astrophysics Data System (ADS)

Carotenuto, G.; Schiavo, L.; Romeo, V.; Nicolais, L.

2014-05-01

Graphene can be conveniently used in the modification of polymer surfaces. Graphene macromolecules are perfectly transparent to the visible light and electrically conductive, consequently these two properties can be simultaneously provided to polymeric substrates by surface coating with thin graphene layers. In addition, such coating process provides the substrates of: water-repellence, higher surface hardness, low-friction, self-lubrication, gas-barrier properties, and many other functionalities. Polyolefins have a non-polar nature and therefore graphene strongly sticks on their surface. Nano-crystalline graphite can be used as graphene precursor in some chemical processes (e.g., graphite oxide synthesis by the Hummer method), in addition it can be directly applied to the surface of a polyolefin substrate (e.g., polyethylene) to cover it by a thin graphene multilayer. In particular, the nano-crystalline graphite perfectly exfoliate under the application of a combination of shear and friction forces and the produced graphene single-layers perfectly spread and adhere on the polyethylene substrate surface. Such polymeric materials can be used as ITO (indium-tin oxide) substitute and in the fabrication of different electronic devices. Here the fabrication of transparent resistive deformation sensors based on low-density polyethylene films coated by graphene multilayers is described. Such devices are very sensible and show a high reversible and reproducible behavior.

Lens growth and protein changes in the eastern grey kangaroo.

PubMed

Augusteyn, Robert C

2011-01-01

Development in marsupials takes place predominantly ex utero while the young is attached to a nipple in the mother's pouch, very different from that in other species. This study was undertaken to examine whether this affects lens growth and the production of lens proteins in kangaroos. Fresh lenses were obtained at official culls from eastern gray kangaroos (Macropus giganteus). Wet weights were recorded for all and protein contents were determined for one lens from each animal. Dry weights, after fixation were obtained for 20 lenses. Ages were determined using both molar progression and total lens protein content. Lenses were divided into concentric layers by controlled dissolution using phosphate buffered saline. Samples were taken for determination of protein contents and dry weights, which were then used to determine the age of the layer removed. Soluble crystallin distributions were determined by fractionation of the centrifuged extracts using HPLC-GPC and the polypeptide contents of both soluble and insoluble proteins were assessed by SDS-PAGE. Lens growth is continuous from birth throughout adulthood and the increases in wet weight and fixed dry weight can be described with a single logistic growth functions for the whole life span. Three major crystallin classes, α-, β-, and γ-crystallins, were identified in the immature pouch-young animals aged around 60 days after birth. Adult lenses contain, in addition, the taxon-specific μ-crystallin. The proportions of these vary with the age of the lens tissue due to age related insolubilization as well as changes in the synthesis patterns. During early lactation (birth to 190 days), the α-, β-, and γ-crystallins represent 25, 53, and 20% of the total protein, respectively. After the pouch-young first releases the nipple (190 days), there is a rapid decrease in the production of γ-crystallins to around 5% of the total and a corresponding increase in μ-crystallin, from 0.5% to 15%. These changes were complete by the time the animal was fully weaned, around 1.5 years, and the final proportions of the 4 protein classes were maintained for the rest of life. The solubilities of α- and β-crystallins in the center of the lens decreased after age 5 years. Kangaroo lens growth is asymptotic, similar to that in most other species, even though most development of the young animal takes place ex utero. Changes in the patterns of lens protein synthesis in the kangaroo are similar to those observed in other species except for the large decrease in γ-crystallin and the matching increase in the marsupial-specific μ-crystallin, during late lactation.

Mechanical properties of atomically thin boron nitride and the role of interlayer interactions

PubMed Central

Falin, Aleksey; Cai, Qiran; Santos, Elton J. G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji; Taniguchi, Takashi; Barnett, Matthew R.; Chen, Ying; Ruoff, Rodney S.; Li, Lu Hua

2017-01-01

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but investigation into their mechanical properties remains incomplete. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviours quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better interlayer integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, for example, as mechanical reinforcements. PMID:28639613

Optical properties of single ZnTe nanowires grown at low temperature

NASA Astrophysics Data System (ADS)

Artioli, A.; Rueda-Fonseca, P.; Stepanov, P.; Bellet-Amalric, E.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Kheng, K.; Tatarenko, S.; Ferrand, D.; Cibert, J.

2013-11-01

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm2). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are ⟨111⟩ oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

Investigation of the Influence of Heat Balance Shifts on the Freeze Microstructure and Composition in Aluminum Smelting Bath System: Cryolite-CaF2-AlF3-Al2O3

NASA Astrophysics Data System (ADS)

Liu, Jingjing; Fallah-Mehrjardi, Ata; Shishin, Denis; Jak, Evgueni; Dorreen, Mark; Taylor, Mark

2017-12-01

In an aluminum electrolysis cell, the side ledge forms on side walls to protect it from the corrosive cryolitic bath. In this study, a series of laboratory analogue experiments have been carried out to investigate the microstructure and composition of side ledge (freeze linings) at different heat balance steady states. Three distinct layers are found in the freeze linings formed in the designed Cryolite-CaF2-AlF3-Al2O3 electrolyte system: a closed (columnar) crystalline layer, an open crystalline layer, and a sealing layer. This layered structure changes when the heat balance is shifted between different steady states, by melting or freezing the open crystalline layer. Phase chemistry of the freeze lining is studied in this paper to understand the side ledge formation process upon heat balance shifts. Electron probe X-ray microanalysis (EPMA) is used to characterize the microstructure and compositions of distinct phases existing in the freeze linings, which are identified as cryolite, chiolite, Ca-cryolite, and alumina. A freeze formation mechanism is further developed based on these microstructural/compositional investigations and also thermodynamic calculations through the software—FactSage. It is found that entrapped liquid channels exist in the open crystalline layer, assisting with the mass transfer between solidified crystals and bulk molten bath.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation.

PubMed

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-03-30

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

PubMed Central

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-01-01

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors. PMID:27026070

Configuration of twins in glass-embedded silver nanoparticles of various origin

NASA Astrophysics Data System (ADS)

Hofmeister, H.; Dubiel, M.; Tan, G. L.; Schicke, K.-D.

2005-09-01

Structural characterization using high resolution electron microscopy and diffractogram analysis of silver nanoparticles embedded in glass by various routes of fabrication was aimed at revealing the characteristic features of twin faults occuring in such particles. Nearly spherical silver nanoparticles well below 10 nm size embedded in commercial soda-lime silicate float glass have been fabricated either by silver/sodium ion exchange or by Ag+ ion implantation. Twinned nanoparticles, besides single crystalline species, have frequently been observed for both fabrication routes, mainly at sizes above 5 nm, but also at smaller sizes, even around 1 nm. The variety of particle forms comprises single crystalline particles of nearly cuboctahedron shape, particles containing single twin faults, and multiply twinned particles containing parallel twin lamellae, or cyclic twinned segments arranged around axes of fivefold symmetry. Parallel twinning is distinctly favoured by ion implantation whereas cyclic twinning preferably occurs upon ion exchange processing. Regardless of single or repeated twinning, parallel or cyclic twin arrangement, one may classify simple twin faults of regular atomic configuration and compound twin faults whose irregular configuration consists of additional planar defects like associated stacking faults or secondary twin faults. Besides, a particular superstructure composed of parallel twin lamellae of only three atomic layers thickness is observed.

Corrosion of low alloy steel containing 0.5% chromium in supercritical CO2-saturated brine and water-saturated supercritical CO2 environments

NASA Astrophysics Data System (ADS)

Wei, Liang; Gao, Kewei; Li, Qian

2018-05-01

The corrosion behavior of P110 low-Cr alloy steel in supercritical CO2-saturated brine (aqueous phase) and water-saturated supercritical CO2 (SC CO2 phase) was investigated. The results show that P110 steel primarily suffered general corrosion in the aqueous phase, while severe localized corrosion occurred in the SC CO2 phase. The formation of corrosion product scale on P110 steel in the aqueous phase divided into three stages: formation of the initial corrosion layer containing amorphous Cr(OH)3, FeCO3 and a small amount of Fe3C; transformation of initial corrosion layer to mixed layer, which consisted of FeCO3 and a small amount of Cr(OH)3 and Fe3C; growth and dissolution of the mixed layer. Finally, only a single mixed layer covered on the steel in the aqueous phase. However, the scale formed in SC CO2 phase consisted of two layers: the inner mixed layer and the dense outer FeCO3 crystalline layer.

Asynchronous cracking with dissimilar paths in multilayer graphene.

PubMed

Jang, Bongkyun; Kim, Byungwoon; Kim, Jae-Hyun; Lee, Hak-Joo; Sumigawa, Takashi; Kitamura, Takayuki

2017-11-16

Multilayer graphene consists of a stack of single-atomic-thick monolayer graphene sheets bound with π-π interactions and is a fascinating model material opening up a new field of fracture mechanics. In this study, fracture behavior of single-crystalline multilayer graphene was investigated using an in situ mode I fracture test under a scanning electron microscope, and abnormal crack propagation in multilayer graphene was identified for the first time. The fracture toughness of graphene was determined from the measured load-displacement curves and the realistic finite element modelling of specimen geometries. Nonlinear fracture behavior of the multilayer graphene is discussed based on nonlinear elastic fracture mechanics. In situ scanning electron microscope images obtained during the fracture test showed asynchronous crack propagation along independent paths, causing interlayer shear stress and slippages. We also found that energy dissipation by interlayer slippages between the graphene layers is the reason for the enhanced fracture toughness of multilayer graphene. The asynchronous cracking with independent paths is a unique cracking and toughening mechanism for single-crystalline multilayer graphene, which is not observed for the monolayer graphene. This could provide a useful insight for the design and development of graphene-based composite materials for structural applications.

Lattice matched crystalline substrates for cubic nitride semiconductor growth

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2015-02-24

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Band Structure Simulations of the Photoinduced Changes in the MgB₂:Cr Films.

PubMed

Kityk, Iwan V; Fedorchuk, Anatolii O; Ozga, Katarzyna; AlZayed, Nasser S

2015-04-02

An approach for description of the photoinduced nonlinear optical effects in the superconducting MgB₂:Cr₂O₃ nanocrystalline film is proposed. It includes the molecular dynamics step-by-step optimization of the two separate crystalline phases. The principal role for the photoinduced nonlinear optical properties plays nanointerface between the two phases. The first modified layers possess a form of slightly modified perfect crystalline structure. The next layer is added to the perfect crystalline structure and the iteration procedure is repeated for the next layer. The total energy here is considered as a varied parameter. To avoid potential jumps on the borders we have carried out additional derivative procedure.

Synthesis and structural characterization of bulk Sb2Te3 single crystal

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

Structure reconstruction of TiO2-based multi-wall nanotubes: first-principles calculations.

PubMed

Bandura, A V; Evarestov, R A; Lukyanov, S I

2014-07-28

A new method of theoretical modelling of polyhedral single-walled nanotubes based on the consolidation of walls in the rolled-up multi-walled nanotubes is proposed. Molecular mechanics and ab initio quantum mechanics methods are applied to investigate the merging of walls in nanotubes constructed from the different phases of titania. The combination of two methods allows us to simulate the structures which are difficult to find only by ab initio calculations. For nanotube folding we have used (1) the 3-plane fluorite TiO2 layer; (2) the anatase (101) 6-plane layer; (3) the rutile (110) 6-plane layer; and (4) the 6-plane layer with lepidocrocite morphology. The symmetry of the resulting single-walled nanotubes is significantly lower than the symmetry of initial coaxial cylindrical double- or triple-walled nanotubes. These merged nanotubes acquire higher stability in comparison with the initial multi-walled nanotubes. The wall thickness of the merged nanotubes exceeds 1 nm and approaches the corresponding parameter of the experimental patterns. The present investigation demonstrates that the merged nanotubes can integrate the two different crystalline phases in one and the same wall structure.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer

NASA Astrophysics Data System (ADS)

Chia, Wei‑Kuo; Yokoyama, Meiso; Yang, Cheng‑Fu; Chiang, Wang‑Ta; Chen, Ying‑Chung

2006-07-01

Bi4Ti3O12 thin films are deposited on indium tin oxide (ITO)/glass substrates using RF magnetron sputtering technology and are annealed at 675 °C in a rapid thermal annealing furnace in an oxygen atmosphere. The resulting films have high optical transmittances and good crystalline characteristics. ZnS:TbOF films are then deposited on the Bi4Ti3O12 films, causing the originally highly transparent specimens to blacken and to resemble a glass surface coated with carbon powder. The optical transmittance of the specimen is less than 15% under the visible wavelength range, and neither a crystalline phase nor a distinct ZnS grain structure is evident in X-ray diffractometer (XRD) and scanning electronic microscope (SEM). Secondary ion mass spectrometer (SIMS) analysis reveals the occurrence of interdiffusion between the ZnS and Bi4Ti3O12 layers. This suggests that one or more unknown chemical reactions take place among the elements Bi, S, and O at the interface during the deposition of ZnS:TbOF film on a Bi4Ti3O12/ITO/glass substrate. These reactions cause the visible transmittance of the specimens to deteriorate dramatically. To prevent interdiffusion, a silicon dioxide (SiO2) buffer layer 100 nm thick was grown on the Bi4Ti3O12/ITO/glass substrate using plasma-enhanced chemical vapor deposition (PECVD), then the ZnS:TbOF film was grown on the SiO2 buffer layer. The transmittance of the resulting specimen is enhanced approximately 8-fold in the visible region. XRD patterns reveal the ZnS(111)-oriented phase is dominant. Furthermore, dense, crack-free ZnS:TbOF grains are observed by SEM. The results imply that the SiO2 buffer layer sandwiched between the ZnS:TbOF and Bi4Ti3O2 layers effectively separates the two layers. Therefore, interdiffusion and chemical reactions are prevented at the interface of the two layers, and the crystalline characteristics of the ZnS:TbOF layer and the optical transmittance of the specimen are improved as a result. Finally, the dielectric constant of the stacked structure is lower than that of the single layer structure without SiO2, but the dielectric breakdown strength is enhanced.

Large-scale fabrication of single crystalline tin nanowire arrays

NASA Astrophysics Data System (ADS)

Luo, Bin; Yang, Dachi; Liang, Minghui; Zhi, Linjie

2010-09-01

Large-scale single crystalline tin nanowire arrays with preferred lattice orientation along the [100] direction were fabricated in porous anodic aluminium oxide (AAO) membranes by the electrodeposition method using copper nanorod as a second electrode.Large-scale single crystalline tin nanowire arrays with preferred lattice orientation along the [100] direction were fabricated in porous anodic aluminium oxide (AAO) membranes by the electrodeposition method using copper nanorod as a second electrode. Electronic supplementary information (ESI) available: Experimental details and the information for single crystalline copper nanorods. See DOI: 10.1039/c0nr00206b

Synthesis of Large-area Crystalline MoTe2 Atomic layer from Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Zhou, Lin; Zubair, Ahmad; Xu, Kai; Kong, Jing; Dresselhaus, Mildred

The controlled synthesis of highly crystalline large-area molybdenum ditelluride MoTe2 atomic layers is crucial for the practical applications of this emerging material. Here we develop a novel approach for the growth of large-area, uniform and highly crystalline few-layer MoTe2 film via chemical vapour deposition (CVD). Large-area atomically thin MoTe2 film has been successfully synthesized by tellurization of a MoO3 film. The as-grown MoTe2 film is uniform, stoichiometric, and highly crystalline. As a result of the high crystallinity, the electronic properties of MoTe2 film are comparable with that of mechanically exfoliated MoTe2 flakes. Moreover, we found that two different phases of MoTe2 (2H and 1T') can be grown depending on the choice of Mo precursor. Since the MoTe2 film is highly homogenous, and the size of the film is only limited by the substrate and CVD system size, our growth method paves the way for large-scale application of MoTe2 in high performance nanoelectronics and optoelectronics.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3 (LBM) films and LBM/BaTiO3/LBM heterostructures

NASA Astrophysics Data System (ADS)

Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.; Lourenço, A. A. C. S.; Amaral, V. S.

2017-12-01

Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced lattice mismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses of the films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm on both substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is further investigated. It is known that the crystal structure of substrates and imposed tensile strain affect the physical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate shows out-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The magnetic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 K and 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si substrate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ions into magnetic layer. Meanwhile, the Tc in LBMBTs increases in respect to other studied single layers and heterostructure, because of higher tensile strain induced at the interfaces.

Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker.

PubMed

Wang, Chun; Zhuang, Hao; Huang, Nan; Heuser, Steffen; Schlemper, Christoph; Zhai, Zhaofeng; Liu, Baodan; Staedler, Thorsten; Jiang, Xin

2016-06-14

As a potential material for biosensing applications, gallium nitride (GaN) films have attracted remarkable attention. In order to construct GaN biosensors, a corresponding immobilization of biolinkers is of great importance in order to render a surface bioactive. In this work, two kinds of n-alkenes with different carbon chain lengths, namely allylamine protected with trifluoroacetamide (TFAAA) and 10-aminodec-1-ene protected with trifluoroacetamide (TFAAD), were used to photochemically functionalize single crystalline GaN films. The successful linkage of both TFAAA and TFAAD to the GaN films is confirmed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurement. With increased UV illumination time, the intensity of the secondary ions corresponding to the linker molecules initially increases and subsequently decreases in both cases. Based on the SIMS measurements, the maximum coverage of TFAAA is achieved after 14 h of UV illumination, while only 2 h is required in the case of TFAAD to reach the situation of a fully covered GaN surface. This finding leads to the conclusion that the reaction rate of TFAAD is significantly higher compared to TFAAA. Measurements by atomic force microscopy (AFM) indicate that the coverage of GaN films by a TFAAA layer leads to an increased surface roughness. The atomic terraces, which are clearly observable for the pristine GaN films, disappear once the surface is fully covered by a TFAAA layer. Such TFAAA layers will feature a homogeneous surface topography even for reaction times of 24 h. In contrast to this, TFAAD shows strong cross-polymerization on the surface, this is confirmed by optical microscopy. These results demonstrate that TFAAA is a more suitable candidate as biolinker in context of the GaN surfaces due to its improved controllability.

Homoepitaxial growth of metal halide crystals investigated by reflection high-energy electron diffraction

DOE PAGES

Chen, Pei; Kuttipillai, Padmanaban S.; Wang, Lili; ...

2017-01-10

Here, we report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flowmore » growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.« less

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Properties of epitaxial BaTiO{sub 3} deposited on GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Contreras-Guerrero, R.; Droopad, R.; Veazey, J. P.

2013-01-07

Single crystal BaTiO{sub 3} (BTO) has been grown epitaxially on GaAs using molecular beam epitaxy with a 2 unit cell SrTiO{sub 3} nucleation layer. The oxide film is lattice-matched to GaAs through an in-plane rotation of 45 Degree-Sign relative to the (100) surface leading to c-axis orientation of the BaTiO{sub 3}. X-ray diffraction confirmed the crystallinity and orientation of the oxide film with a full width half maximum of 0.58 Degree-Sign for a 7.5 nm thick layer. Piezoresponse force microscopy was used to characterize the ferroelectric domains in the BaTiO{sub 3} layer, and a coercive voltage of 1-2 V andmore » piezoresponse amplitude {approx}5 pm/V was measured.« less

Advanced fabrication of single-crystalline silver nanopillar on SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Tomohiro, E-mail: tomohiro-mori@wakayama-kg.jp, E-mail: kenzo@eng.kagawa-u.ac.jp; Industrial Technology Center of Wakayama Prefecture, Ogura 60, Wakayama 649-6261; Tanaka, Yasuhiro

2016-01-25

Nanoscale crystallographic textures have received very little attention in research on surface plasmons using metallic nanostructures. A single-crystalline metallic nanostructure with a controlled crystallographic texture is expected to reduce optical losses. We elucidated the grain growth mechanism in silver thin films deposited on a highly transparent SiO{sub 2} substrate by electron backscatter diffraction methods with nanoscale resolution. At higher substrate temperatures, the grain growth was facilitated but the preferred orientation was not achieved. Moreover, we fabricated a single-crystalline silver nanopillar in a (111)-oriented large growing grain, which was controlled by varying the substrate temperature during film deposition by focused ion-beammore » milling. Furthermore, the light intensity of the scattering spectrum was measured for a single-crystalline silver nanopillar (undersurface diameter: 200 nm) for which surface plasmon resonance was observed. The single-crystalline silver nanopillar exhibits a stronger and sharper spectrum than the polycrystalline silver nanopillar. These results can be applied to the direct fabrication of a single-crystalline silver nanopillar using only physical processing.« less

In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films

NASA Astrophysics Data System (ADS)

Chubarov, Mikhail; Choudhury, Tanushree H.; Zhang, Xiaotian; Redwing, Joan M.

2018-02-01

There is significant interest in the growth of single crystal monolayer and few-layer films of transition metal dichalcogenides (TMD) and other 2D materials for scientific exploration and potential applications in optics, electronics, sensing, catalysis and others. The characterization of these materials is crucial in determining the properties and hence the applications. The ultra-thin nature of 2D layers presents a challenge to the use of x-ray diffraction (XRD) analysis with conventional Bragg-Brentano geometry in analyzing the crystallinity and epitaxial orientation of 2D films. To circumvent this problem, we demonstrate the use of in-plane XRD employing lab scale equipment which uses a standard Cu x-ray tube for the analysis of the crystallinity of TMD monolayer and few-layer films. The applicability of this technique is demonstrated in several examples for WSe2 and WS2 films grown by chemical vapor deposition on single crystal substrates. In-plane XRD was used to determine the epitaxial relation of WSe2 grown on c-plane sapphire and on SiC with an epitaxial graphene interlayer. The evolution of the crystal structure orientation of WS2 films on sapphire as a function of growth temperature was also examined. Finally, the epitaxial relation of a WS2/WSe2 vertical heterostructure deposited on sapphire substrate was determined. We observed that WSe2 grows epitaxially on both substrates employed in this work under all conditions studied while WS2 exhibits various preferred orientations on sapphire substrate which are temperature dependent. In contrast to the sapphire substrate, WS2 deposited on WSe2 exhibits only one preferred orientation which may provide a route to better control the orientation and crystal quality of WS2. In the case of epitaxial graphene on SiC, no graphene-related peaks were observed in in-plane XRD while its presence was confirmed using Raman spectroscopy. This demonstrates the limitation of the in-plane XRD technique for characterizing low electron density materials.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

Reassembly of S-layer proteins

NASA Astrophysics Data System (ADS)

Pum, Dietmar; Sleytr, Uwe B.

2014-08-01

Crystalline bacterial cell surface layers (S-layers) represent the outermost cell envelope component in a broad range of bacteria and archaea. They are monomolecular arrays composed of a single protein or glycoprotein species and represent the simplest biological membranes developed during evolution. They are highly porous protein mesh works with unit cell sizes in the range of 3 to 30 nm, and pore sizes of 2 to 8 nm. S-layers are usually 5 to 20 nm thick (in archaea, up to 70 nm). S-layer proteins are one of the most abundant biopolymers on earth. One of their key features, and the focus of this review, is the intrinsic capability of isolated native and recombinant S-layer proteins to form self-assembled mono- or double layers in suspension, at solid supports, the air-water interface, planar lipid films, liposomes, nanocapsules, and nanoparticles. The reassembly is entropy-driven and a fascinating example of matrix assembly following a multistage, non-classical pathway in which the process of S-layer protein folding is directly linked with assembly into extended clusters. Moreover, basic research on the structure, synthesis, genetics, assembly, and function of S-layer proteins laid the foundation for their application in novel approaches in biotechnology, biomimetics, synthetic biology, and nanotechnology.

Liquid crystalline composites containing phyllosilicates

DOEpatents

Chaiko,; David, J [Naperville, IL

2007-05-08

The present invention provides barrier films having reduced gas permeability for use in packaging and coating applications. The barrier films comprise an anisotropic liquid crystalline composite layer formed from phyllosilicate-polymer compositions. Phyllosilicate-polymer liquid crystalline compositions of the present invention can contain a high percentage of phyllosilicate while remaining transparent. Because of the ordering of the particles in the liquid crystalline composite, barrier films comprising liquid crystalline composites are particularly useful as barriers to gas transport.

Low intrinsic c-axis thermal conductivity in PVD grown epitaxial Sb2Te3 films

NASA Astrophysics Data System (ADS)

Rieger, F.; Kaiser, K.; Bendt, G.; Roddatis, V.; Thiessen, P.; Schulz, S.; Jooss, C.

2018-05-01

Accurate determination and comprehensive understanding of the intrinsic c-axis thermal conductivity κc of thermoelectric layered Sb2Te3 is of high importance for the development of strategies to optimize the figure of merit in thin film devices via heterostructures and defect engineering. We present here high precision measurements of κc of epitaxial Sb2Te3 thin films on Al2O3 substrates grown by physical vapor deposition in the temperature range of 100 K to 300 K. The Kapitza resistances of the involved interfaces have been determined and subtracted from the film data, allowing access to the intrinsic thermal conductivity of single crystalline Sb2Te3. At room temperature, we obtain κc = 1.9 W/m K, being much smaller than the in-plane thermal conductivity of κa b = 5 W/m K and even lower than the thermal conductivity of nano crystalline films of κnc ≈ 2.0-2.6 W/m K published by Park et al. [Nanoscale Res. Lett. 9, 96 (2014)]. High crystallinity and very low defect concentration of the films were confirmed by x-ray diffraction and high resolution transmission electron microscopy. Our data reveal that the phonon mean free path lm f p(" separators="|T ) is not limited by defect scattering and is of intrinsic nature, i.e., due to phonon-phonon scattering similar to other soft van der Waals type bonded layered systems.

Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp; Fukuda, Hiroshi

We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on opticalmore » anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Soft Nanoimprint Lithography for Direct Printing of Crystalline Metal Oxide Nanostructures

NASA Astrophysics Data System (ADS)

Kothari, Rohit; Beaulieu, Michael; Watkins, James

2015-03-01

We demonstrate a solution-based soft nanoimprint lithography technique to directly print dimensionally-stable crystalline metal oxide nanostructures. A patterned PDMS stamp is used in combination with a UV/thermal cure step to imprint a resist containing high concentrations of crystalline nanoparticles in an inorganic/organic binder phase. The as-imprinted nanostructures are highly crystalline and therefore undergo little shrinkage (less than 5% in some cases) upon thermal annealing. High aspect ratio nanostructures and sub-100 nm features are easily realized. Residual layer free direct imprinting (no etching) was achieved by choosing the resist with the appropriate surface energy to ensure dewetting at stamp-substrate interface. The technique was further extended to stack the nanostructures by deploying a layer-by-layer imprint strategy. The method is scalable and can produce large area device quality nanostructures in a rapid fashion at a low cost. CeO2, ITO and TiO2 nanopatterns are illustrated for their potential use in fuel cell electrodes, solar cell electrodes and photonic devices, respectively.

Structure and dynamics of shear bands in amorphous–crystalline nanolaminates

DOE PAGES

Guo, Wei; Gan, Bin; Molina-Aldareguia, Jon M.; ...

2015-08-03

In this paper, the velocities of shear bands in amorphous CuZr/crystalline Cu nanolaminates were quantified as a function of strain rate and crystalline volume fraction. A rate-dependent transition in flow response was found in a 100 nm CuZr/10 nm Cu nanolaminates. When increasing the Cu layer thickness from 10 nm to 100 nm, the instantaneous velocity of the shear band in these nanolaminates decreases from 11.2 μm/s to <~500 nm/s. Finally, atom probe tomography and transmission election microcopy observation revealed that in post-deformed pillars both grain rotation in the crystalline portion and non-diffusive crystallization in the amorphous layer affect themore » viscosity of shear bands.« less

Optical reflectance of solution processed quasi-superlattice ZnO and Al-doped ZnO (AZO) channel materials

NASA Astrophysics Data System (ADS)

Buckley, Darragh; McCormack, Robert; O'Dwyer, Colm

2017-04-01

The angle-resolved reflectance of high crystalline quality, c-axis oriented ZnO and AZO single and periodic quasi-superlattice (QSL) spin-coated TFT channels materials are presented. The data is analysed using an adapted model to accurately determine the spectral region for optical thickness and corresponding reflectance. The optical thickness agrees very well with measured thickness of 1-20 layered QSL thin films determined by transmission electron microscopy if the reflectance from lowest interference order is used. Directional reflectance for single layers or homogeneous QSLs of ZnO and AZO channel materials exhibit a consistent degree of anti-reflection characteristics from 30 to 60° (~10-12% reflection) for thickness ranging from ~40 nm to 500 nm. The reflectance of AZO single layer thin films is  <10% from 30 to 75° at 514.5 nm, and  <6% at 632.8 nm from 30-60°. The data show that ZnO and AZO with granular or periodic substructure behave optically as dispersive, continuous thin films of similar thickness, and angle-resolved spectral mapping provides a design rule for transparency or refractive index determination as a function of film thickness, substructure (dispersion) and viewing angle.

Visualization of phase evolution in model organic photovoltaic structures via energy-filtered transmission electron microscopy.

PubMed

Herzing, Andrew A; Ro, Hyun Wook; Soles, Christopher L; DeLongchamp, Dean M

2013-09-24

The morphology of the active layer in an organic photovoltaic bulk-heterojunction device is controlled by the extent and nature of phase separation during processing. We have studied the effects of fullerene crystallinity during heat treatment in model structures consisting of a layer of poly(3-hexylthiophene) (P3HT) sandwiched between two layers of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Utilizing a combination of focused ion-beam milling and energy-filtered transmission electron microscopy, we monitored the local changes in phase distribution as a function of annealing time at 140 °C. In both cases, dissolution of PCBM within the surrounding P3HT was directly visualized and quantitatively described. In the absence of crystalline PCBM, the overall phase distribution remained stable after intermediate annealing times up to 60 s, whereas microscale PCBM aggregates were observed after annealing for 300 s. Aggregate growth proceeded vertically from the substrate interface via uptake of PCBM from the surrounding region, resulting in a large PCBM-depleted region in their vicinity. When precrystallized PCBM was present, amorphous PCBM was observed to segregate from the intermediate P3HT layer and ripen the crystalline PCBM underneath, owing to the far lower solubility of crystalline PCBM within P3HT. This process occurred rapidly, with segregation already evident after annealing for 10 s and with uptake of nearly all of the amorphous PCBM by the crystalline layer after 60 s. No microscale aggregates were observed in the precrystallized system, even after annealing for 300 s.

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

PubMed

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 < δ < 0.5) by carefully monitoring the resistance changes under a switching flow of oxidizing gas (O2) and reducing gas (H2) in the temperature range of 250 ~ 800 °C. A giant resistance change ΔR by three to four orders of magnitude in less than 0.1 s was found with a fast oscillation behavior in the resistance change rates in the ΔR vs. t plots, suggesting that the oxygen vacancy exchange diffusion with oxygen/hydrogen atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-05-09

A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

Method for fabricating transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1997-01-01

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Method for fabricating transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1997-09-02

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

Lens growth and protein changes in the eastern grey kangaroo

PubMed Central

2011-01-01

Purpose Development in marsupials takes place predominantly ex utero while the young is attached to a nipple in the mother’s pouch, very different from that in other species. This study was undertaken to examine whether this affects lens growth and the production of lens proteins in kangaroos. Methods Fresh lenses were obtained at official culls from eastern gray kangaroos (Macropus giganteus). Wet weights were recorded for all and protein contents were determined for one lens from each animal. Dry weights, after fixation were obtained for 20 lenses. Ages were determined using both molar progression and total lens protein content. Lenses were divided into concentric layers by controlled dissolution using phosphate buffered saline. Samples were taken for determination of protein contents and dry weights, which were then used to determine the age of the layer removed. Soluble crystallin distributions were determined by fractionation of the centrifuged extracts using HPLC-GPC and the polypeptide contents of both soluble and insoluble proteins were assessed by SDS–PAGE. Results Lens growth is continuous from birth throughout adulthood and the increases in wet weight and fixed dry weight can be described with a single logistic growth functions for the whole life span. Three major crystallin classes, α-, β-, and γ-crystallins, were identified in the immature pouch-young animals aged around 60 days after birth. Adult lenses contain, in addition, the taxon-specific μ-crystallin. The proportions of these vary with the age of the lens tissue due to age related insolubilization as well as changes in the synthesis patterns. During early lactation (birth to 190 days), the α-, β-, and γ-crystallins represent 25, 53, and 20% of the total protein, respectively. After the pouch-young first releases the nipple (190 days), there is a rapid decrease in the production of γ-crystallins to around 5% of the total and a corresponding increase in μ-crystallin, from 0.5% to 15%. These changes were complete by the time the animal was fully weaned, around 1.5 years, and the final proportions of the 4 protein classes were maintained for the rest of life. The solubilities of α- and β-crystallins in the center of the lens decreased after age 5 years. Conclusions Kangaroo lens growth is asymptotic, similar to that in most other species, even though most development of the young animal takes place ex utero. Changes in the patterns of lens protein synthesis in the kangaroo are similar to those observed in other species except for the large decrease in γ-crystallin and the matching increase in the marsupial-specific μ-crystallin, during late lactation. PMID:22194649

Center for dielectric studies

NASA Astrophysics Data System (ADS)

Cross, L. E.; Newnham, R. E.; Biggers, J. V.

1984-05-01

This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

Intrinsic white-light emission from layered hybrid perovskites.

PubMed

Dohner, Emma R; Jaffe, Adam; Bradshaw, Liam R; Karunadasa, Hemamala I

2014-09-24

We report on the second family of layered perovskite white-light emitters with improved photoluminescence quantum efficiencies (PLQEs). Upon near-ultraviolet excitation, two new Pb-Cl and Pb-Br perovskites emit broadband "cold" and "warm" white light, respectively, with high color rendition. Emission from large, single crystals indicates an origin from the bulk material and not surface defect sites. The Pb-Br perovskite has a PLQE of 9%, which is undiminished after 3 months of continuous irradiation. Our mechanistic studies indicate that the emission has contributions from strong electron-phonon coupling in a deformable lattice and from a distribution of intrinsic trap states. These hybrids provide a tunable platform for combining the facile processability of organic materials with the structural definition of crystalline, inorganic solids.

Scanning tunneling spectroscopy study of the proximity effect in a disordered two-dimensional metal.

PubMed

Serrier-Garcia, L; Cuevas, J C; Cren, T; Brun, C; Cherkez, V; Debontridder, F; Fokin, D; Bergeret, F S; Roditchev, D

2013-04-12

The proximity effect between a superconductor and a highly diffusive two-dimensional metal is revealed in a scanning tunneling spectroscopy experiment. The in situ elaborated samples consist of superconducting single crystalline Pb islands interconnected by a nonsuperconducting atomically thin disordered Pb wetting layer. In the vicinity of each superconducting island the wetting layer acquires specific tunneling characteristics which reflect the interplay between the proximity-induced superconductivity and the inherent electron correlations of this ultimate diffusive two-dimensional metal. The observed spatial evolution of the tunneling spectra is accounted for theoretically by combining the Usadel equations with the theory of dynamical Coulomb blockade; the relevant length and energy scales are extracted and found in agreement with available experimental data.

Nanowires, nanostructures and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2005-04-19

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Black phosphorus nanodevices at terahertz frequencies: Photodetectors and future challenges

NASA Astrophysics Data System (ADS)

Viti, Leonardo; Politano, Antonio; Vitiello, Miriam Serena

2017-03-01

The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest, thanks to many favorable properties, such as the high carrier mobility, the in-plane anisotropy, the possibility to alter its transport via electrical gating, and the direct band-gap, which can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor, a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor, or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.

Single-crystalline dendritic bimetallic and multimetallic nanocubes.

PubMed

Kuang, Yun; Zhang, Ying; Cai, Zhao; Feng, Guang; Jiang, Yingying; Jin, Chuanhong; Luo, Jun; Sun, Xiaoming

2015-12-01

Developing facial synthetic routes for fabrication of multimetallic nanocatalysts with open porous morphology, tunable composition and tailored crystalline structure is a big challenge for fabrication of low-cost electrocatalysts. Here we report on the synthesis of single-crystalline dendritic bimetallic and multimetallic nanocubes via a solvothermal co-reduction method. These cubes show highly porous, complex 3D inner connections but single-crystalline structure. Tuning the reduction kinetics of metal precursors and introducing galvanic reaction at the active sites during growth were believed to be the keys for the formation of such unique nanostructure. Electro-catalytic oxygen reduction (ORR) and methanol oxidation (MOR) on these catalysts showed dramatic enhancements for both cathodic and anodic electrocatalysis in fuel cells, which were attributed to their unique morphology and crystalline structure, as well as synergetic effect of the multi-metallic components. This work uncovers the formation mechanism of such complex single-crystalline dendritic multimetallic nanocrystals and offers a promising synthetic strategy for geometric and crystalline control of multimetallic nanocrystals with tailored physical and chemical properties, which will benefit the development of clean energy.

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly.

PubMed

Rekab, Wassima; Stoeckel, Marc-Antoine; El Gemayel, Mirella; Gobbi, Marco; Orgiu, Emanuele; Samorì, Paolo

2016-04-20

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm(2) V(-1) s(-1). Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 10(3) AW(-1), and 5 × 10(3), respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material's properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer.

Study of the recrystallization in coated pellets - effect of coating on API crystallinity.

PubMed

Nikowitz, Krisztina; Pintye-Hódi, Klára; Regdon, Géza

2013-02-14

Coated diltiazem hydrochloride-containing pellets were prepared using the solution layering technique. Unusual thermal behavior was detected with differential scanning calorimetry (DSC) and its source was determined using thermogravimetry (TG), X-ray powder diffraction (XRPD) and hot-stage microscopy. The coated pellets contained diltiazem hydrochloride both in crystalline and amorphous form. Crystallization occurs on heat treatment causing an exothermic peak on the DSC curves that only appears in pellets containing both diltiazem hydrochloride and the coating. Results indicate that the amorphous fraction is situated in the coating layer. The migration of drugs into the coating layer can cause changes in its degree of crystallinity. Polymeric coating materials should therefore be investigated as possible crystallization inhibitors. Copyright © 2012 Elsevier B.V. All rights reserved.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

NASA Astrophysics Data System (ADS)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates

NASA Astrophysics Data System (ADS)

Roychowdhury, R.; Kumar, Shailendra; Wadikar, A.; Mukherjee, C.; Rajiv, K.; Sharma, T. K.; Dixit, V. K.

2017-10-01

Role of surface energy on the morphology, crystalline quality, electronic structure and optical properties of GaP layer grown on Si (001), Si (111), Ge (111) and GaAs (001) is investigated. GaP layers are grown on four different substrates under identical growth kinetics by metal organic vapour phase epitaxy. The atomic force microscopy images show that GaP layer completely covers the surface of GaAs substrate. On the other hand, the surfaces of Si (001), Si (111), Ge (111) substrates are partially covered with crystallographically morphed GaP island type micro and nano-structures. Origin of these crystallographically morphed GaP island is explained by the theoretical calculation of surface energy of the layer and corresponding substrates respectively. The nature of GaP island type micro and nano-structures and layers are single crystalline with existence of rotational twins on Si and Ge (111) substrates which is confirmed by the phi, omega and omega/2theta scans of high resolution x-ray diffraction. The electronic valence band offsets between the GaP and substrates have been determined from the valence band spectra of ultraviolet photoelectron spectroscopy. The valence electron plasmon of GaP are investigated by studying the energy values of Ga (3d) core level along with loss peaks in the energy dependent photoelectron spectra. The peak observed within the range of 3-6 eV from the Ga (3d) core level in the photoelectron spectra are associated to inter band transitions as their energy values are estimated from the pseudo dielectric function by the spectroscopic ellipsometry.

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

PubMed

Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J; Robinson, Jeremy T; Wallace, Robert M; Mayer, Theresa S; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A

2014-12-10

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

Investigation of the graphene-electrolyte interface in Li-air batteries: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Pavlov, S. V.; Kislenko, S. A.

2018-01-01

In this work the behavior of the main reactants (Li+, O2) of the oxygen reduction reaction (ORR) in acetonitrile solvent near the multi-layer graphene edge has been studied. It was observed by molecular dynamics simulations that the concentration distributions of the Li+ and O2 represent a “chessboard” structure. It was ascertained that the concentrations of the lithium ions and oxygen molecules reach their maximum values near the graphene edges pushed out from the surface, which may act as nucleation centers for the formation of crystalline products of the ORR. The maps of the free energy were estimated for the Li+ and O2. Energy optimal trajectories for the adsorption of oxygen molecules and lithium ions were found. Moreover, the distributions of the electric potential were obtained near the following carbon surfaces: single- and multi-layer graphene edge, graphene plane, which shows the qualitative differences in the double-layer structure.

Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

NASA Astrophysics Data System (ADS)

Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

Single Molecule Study of Cellulase Hydrolysis of Crystalline Cellulose

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Y.-S.; Luo, Y.; Baker, J. O.

This report seeks to elucidate the role of cellobiohydrolase-I (CBH I) in the hydrolysis of crystalline cellulose. A single-molecule approach uses various imaging techniques to investigate the surface structure of crystalline cellulose and changes made in the structure by CBH I.

Gallium nitride based logpile photonic crystals.

PubMed

Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J

2011-11-09

We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

Quantitative crystallinity determination for E1010, a novel carbapenem antibiotic, using differential scanning calorimetry.

PubMed

Kushida, Ikuo

2012-03-01

The objective of this study was to develop a quantitative crystallinity analysis method for the bulk drug of E1010 ((+)-(4R,5S,6S)-6-[(R)-1-hydroxyethyl]-3-[(2S,4S)-2-[(R)-1-hydroxy-1-[(R)-pyrrolidin-3 -yl]methyl]pyrrolidin-4-yl]thio-4-methyl-7-oxo-1-azabicyclo[3.2.0]hept-2-ene-2-carboxylic acid monohydrochloride), a novel carbapenem antibiotic. X-ray analyses, thermal analyses and hygroscopicity measurements were used to elucidate the crystal structure and the solid state properties. To develop a quantitative method for the crystallinity of E1010 bulk drug, the relationship between enthalpy change obtained by differential scanning calorimetry (DSC) and crystalline form ratio was investigated. E1010 bulk drug was found to exist in a crystalline trihydrate formed in two layers, i.e. a layer of E1010 free form, and a layer consisting of chloride ions and water molecules. The thermal analysis showed an endothermic peak derived from dehydration with the loss of crystal lattices at around 100°C as an onset. The enthalpy change value for the endothermic peak correlated well with crystalline content in binary physical mixtures of the crystalline trihydrate and the amorphous form. In addition, for nine lots of the bulk drug, a positive correlation between the enthalpy change and chemical stability in the solid state was observed. This quantitative analysis of crystallinity using DSC could be applicable for the quality control of the bulk drug to detect variability among manufacturing batches and to estimate the chemical stability of partially amorphous samples. © 2011 The Author. JPP © 2011 Royal Pharmaceutical Society.

In situ surface and interface study of crystalline (3×1)-O on InAs

NASA Astrophysics Data System (ADS)

Qin, Xiaoye; Wang, Wei-E.; Rodder, Mark S.; Wallace, Robert M.

2016-07-01

The oxidation behavior of de-capped InAs (100) exposed to O2 gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290-330 °C with a coexistence of In2O and As2O3. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO2 is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO2 growth at 100 °C.

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliviero, E.; David, M. L.; Beaufort, M. F.

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes placemore » and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.« less

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2017-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Understanding crumpling lipid vesicles at the gel phase transition

NASA Astrophysics Data System (ADS)

Hirst, Linda; Ossowski, Adam; Fraser, Matthew

2011-03-01

Wrinkling and crumpling transitions in different membrane types have been studied extensively in recent years both theoretically and computationally. There has also been very interesting recent work on defects in liquid crystalline shells. Lipid bilayer vesicles, widely used in biophysical research can be considered as a single layer smectic shell in the liquid crystalline phase. On cooling the lipid vesicle a transition to the gel phase may take place in which the lipid chains tilt and assume a more ordered packing arrangement. We observe large scale morphological changes in vesicles close to this transition point using fluorescence microscopy and investigate the possible mechanisms for this transition. Confocal microscopy is used to map 3D vesicle shape and crumpling length-scales. We also employ the molecular tilt sensitive dye, Laurdan to investigate the role of tilt domain formation on macroscopic structure. Funded by NSF CAREER award (DMR - BMAT #0852791).

Effect of Long Selenization Time on Co Films under a Low Temperature of 300 °C to Synthesize a Nanostructure CoSe2 and Optical Properties

NASA Astrophysics Data System (ADS)

Wu, Po-Feng; Shi, Jen-Bin; Cheng, Bo-Ci; Wu, Cheng-Han; Lee, Hsuan-Wei; Lin, Hsien-Sheng; Cheng, Fu-Chou; Chen, Kuan-Ping

2018-05-01

This work investigates a simple and non-toxic method to transform pre-deposited amorphous Co film into CoSe2 films at a fixed, low temperature of 300 °C. Single CoSe2-phase films having good crystallinity were obtained at a selenisation time ≧ 24 hours. A nanostructure CoSe2 having two different nano-morphological layers was observed. The CoSe2 films (72 hours) observed a large absorption and a direct band gap.

DOE Office of Scientific and Technical Information (OSTI.GOV)

He Liang; Xiu Faxian; Huang Guan

In this paper, we report the epitaxial growth of Bi{sub 2}Se{sub 3} thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of {approx}100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.

Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

DOE PAGES

Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

2007-10-19

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun [Orinda, CA; Shakouri, Ali [Santa Cruz, CA; Sands, Timothy D [Moraga, CA; Yang, Peidong [Berkeley, CA; Mao, Samuel S [Berkeley, CA; Russo, Richard E [Walnut Creek, CA; Feick, Henning [Kensington, CA; Weber, Eicke R [Oakland, CA; Kind, Hannes [Schaffhausen, CH; Huang, Michael [Los Angeles, CA; Yan, Haoquan [Albany, CA; Wu, Yiying [Albany, CA; Fan, Rong [El Cerrito, CA

2009-08-04

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanosturctures And Nanowires And Devices Fabricated Therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2006-02-07

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2010-11-16

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2018-01-30

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Tandem-layered quantum dot solar cells: tuning the photovoltaic response with luminescent ternary cadmium chalcogenides.

PubMed

Santra, Pralay K; Kamat, Prashant V

2013-01-16

Photon management in solar cells is an important criterion as it enables the capture of incident visible and infrared photons in an efficient way. Highly luminescent CdSeS quantum dots (QDs) with a diameter of 4.5 nm were prepared with a gradient structure that allows tuning of absorption and emission bands over the entire visible region without varying the particle size. These crystalline ternary cadmium chalcogenides were deposited within a mesoscopic TiO(2) film by electrophoretic deposition with a sequentially-layered architecture. This approach enabled us to design tandem layers of CdSeS QDs of varying band gap within the photoactive anode of a QD solar cell (QDSC). An increase in power conversion efficiency of 1.97-2.81% with decreasing band gap was observed for single-layer CdSeS, thus indicating varying degrees of photon harvesting. In two- and three-layered tandem QDSCs, we observed maximum power conversion efficiencies of 3.2 and 3.0%, respectively. These efficiencies are greater than the values obtained for the three individually layered photoanodes. The synergy of using tandem layers of the ternary semiconductor CdSeS in QDSCs was systematically evaluated using transient spectroscopy and photoelectrochemistry.

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

NASA Astrophysics Data System (ADS)

Takeuchi, M.; Shimizu, H.; Kajitani, R.; Kawasaki, K.; Kumagai, Y.; Koukitu, A.; Aoyagi, Y.

2007-01-01

The growth of N-polar AlN layers on c-plane sapphire is reported. Low-temperature AlN (LT-AlN) layers were used as seeding buffer layers with pre-nitridation for sapphire. To avoid strong vapor-phase reaction between trimethylaluminum (TMA) and ammonia (NH 3) and to improve the crystalline quality, low-pressure flow-modulated (FM) metal-organic chemical vapor deposition (MOCVD) technique was introduced with careful optimization of the FM sequence. The surface morphologies and the crystalline quality defined by the X-ray diffraction (XRD) (0 0 2) and (1 0 0) rocking curve measurements strongly depended on the LT-AlN thickness and on the TMA coverage per cycle of the FM growth. The sample showing the best XRD data with a good morphology was almost completely etched in aqueous KOH solution owing to N-polarity. From the plan-view transmission electron microscopy (TEM) observation, the dislocation density was counted to be about 3×10 10 cm -2.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

PubMed

Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

2015-03-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094; Melnikov, A.

2015-03-15

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results weremore » studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.« less

Polarimetry of Pinctada fucata nacre indicates myostracal layer interrupts nacre structure.

PubMed

Metzler, Rebecca A; Jones, Joshua A; D'Addario, Anthony J; Galvez, Enrique J

2017-02-01

The inner layer of many bivalve and gastropod molluscs consists of iridescent nacre, a material that is structured like a brick wall with bricks consisting of crystalline aragonite and mortar of organic molecules. Myostracal layers formed during shell growth at the point of muscle attachment to the shell can be found interspersed within the nacre structure. Little has been done to examine the effect the myostracal layer has on subsequent nacre structure. Here we present data on the structure of the myostracal and nacre layers from a bivalve mollusc, Pinctada fucata . Scanning electron microscope imaging shows the myostracal layer consists of regular crystalline blocks. The nacre before the layer consists of tablets approximately 400 nm thick, while after the myostracal layer the tablets are approximately 500 nm thick. A new technique, imaging polarimetry, indicates that the aragonite crystals within the nacre following the myostracal layer have greater orientation uniformity than before the myostracal layer. The results presented here suggest a possible interaction between the myostracal layer and subsequent shell growth.

Polarimetry of Pinctada fucata nacre indicates myostracal layer interrupts nacre structure

NASA Astrophysics Data System (ADS)

Metzler, Rebecca A.; Jones, Joshua A.; D'Addario, Anthony J.; Galvez, Enrique J.

2017-02-01

The inner layer of many bivalve and gastropod molluscs consists of iridescent nacre, a material that is structured like a brick wall with bricks consisting of crystalline aragonite and mortar of organic molecules. Myostracal layers formed during shell growth at the point of muscle attachment to the shell can be found interspersed within the nacre structure. Little has been done to examine the effect the myostracal layer has on subsequent nacre structure. Here we present data on the structure of the myostracal and nacre layers from a bivalve mollusc, Pinctada fucata. Scanning electron microscope imaging shows the myostracal layer consists of regular crystalline blocks. The nacre before the layer consists of tablets approximately 400 nm thick, while after the myostracal layer the tablets are approximately 500 nm thick. A new technique, imaging polarimetry, indicates that the aragonite crystals within the nacre following the myostracal layer have greater orientation uniformity than before the myostracal layer. The results presented here suggest a possible interaction between the myostracal layer and subsequent shell growth.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Length-dependent thermal transport in one-dimensional self-assembly of planar π-conjugated molecules

NASA Astrophysics Data System (ADS)

Tang, Hao; Xiong, Yucheng; Zu, Fengshuo; Zhao, Yang; Wang, Xiaomeng; Fu, Qiang; Jie, Jiansheng; Yang, Juekuan; Xu, Dongyan

2016-06-01

This work reports a thermal transport study in quasi-one-dimensional organic nanostructures self-assembled from conjugated planar molecules via π-π interactions. Thermal resistances of single crystalline copper phthalocyanine (CuPc) and perylenetetracarboxylic diimide (PTCDI) nanoribbons are measured via a suspended thermal bridge method. We experimentally observed the deviation from the linear length dependence for the thermal resistance of single crystalline β-phase CuPc nanoribbons, indicating possible subdiffusion thermal transport. Interestingly, a gradual transition to the linear length dependence is observed with the increase of the lateral dimensions of CuPc nanoribbons. The measured thermal resistance of single crystalline CuPc nanoribbons shows an increasing trend with temperature. However, the trend of temperature dependence of thermal resistance is reversed after electron irradiation, i.e., decreasing with temperature, indicating that the single crystalline CuPc nanoribbons become `amorphous'. Similar behavior is also observed for PTCDI nanoribbons after electron irradiation, proving that the electron beam can induce amorphization of single crystalline self-assembled nanostructures of planar π-conjugated molecules. The measured thermal resistance of the `amorphous' CuPc nanoribbon demonstrates a roughly linear dependence on the nanoribbon length, suggesting that normal diffusion dominates thermal transport.This work reports a thermal transport study in quasi-one-dimensional organic nanostructures self-assembled from conjugated planar molecules via π-π interactions. Thermal resistances of single crystalline copper phthalocyanine (CuPc) and perylenetetracarboxylic diimide (PTCDI) nanoribbons are measured via a suspended thermal bridge method. We experimentally observed the deviation from the linear length dependence for the thermal resistance of single crystalline β-phase CuPc nanoribbons, indicating possible subdiffusion thermal transport. Interestingly, a gradual transition to the linear length dependence is observed with the increase of the lateral dimensions of CuPc nanoribbons. The measured thermal resistance of single crystalline CuPc nanoribbons shows an increasing trend with temperature. However, the trend of temperature dependence of thermal resistance is reversed after electron irradiation, i.e., decreasing with temperature, indicating that the single crystalline CuPc nanoribbons become `amorphous'. Similar behavior is also observed for PTCDI nanoribbons after electron irradiation, proving that the electron beam can induce amorphization of single crystalline self-assembled nanostructures of planar π-conjugated molecules. The measured thermal resistance of the `amorphous' CuPc nanoribbon demonstrates a roughly linear dependence on the nanoribbon length, suggesting that normal diffusion dominates thermal transport. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09043a

Low cost sol-gel derived SiC-SiO2 nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jannat, Azmira; Lee, Woojin; Akhtar, M. Shaheer; Li, Zhen Yu; Yang, O.-Bong

2016-04-01

This paper describes the preparation, characterizations and the antireflection (AR) coating application in crystalline silicon solar cells of sol-gel derived SiC-SiO2 nanocomposite. The prepared SiC-SiO2 nanocomposite was effectively applied as AR layer on p-type Si-wafer via two step processes, where the sol-gel of precursor solution was first coated on p-type Si-wafer using spin coating at 2000 rpm and then subjected to annealing at 450 °C for 1 h. The crystalline, and structural observations revealed the existence of SiC and SiO2 phases, which noticeably confirmed the formation of SiC-SiO2 nanocomposite. The SiC-SiO2 layer on Si solar cells was found to be an excellent AR coating, exhibiting the low reflectance of 7.08% at wavelengths ranging from 400 to 1000 nm. The fabricated crystalline Si solar cell with SiC-SiO2 nanocomposite AR coating showed comparable power conversion efficiency of 16.99% to the conventional SixNx AR coated Si solar cell. New and effective sol-gel derived SiC-SiO2 AR layer would offer a promising technique to produce high performance Si solar cells with low-cost.

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

PubMed

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2012-01-01

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Formation and characterization of preferred oriented perovskite thin films on single-crystalline substrates

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Chen, Cheng-Chiang; Hsiung Chang, Sheng; Lee, Kuan-Lin; Tseng, Zong-Liang; Chen, Sheng-Hui; Kuo, Hao-Chung

2018-06-01

Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI3) thin films. The estimation of the lattice mismatch at the MAPbI3/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI3 thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI3/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.

Structure, Hydrodynamics, and Phase Transition of Freely Suspended Liquid Crystals

NASA Technical Reports Server (NTRS)

Clark, Noel A.

2000-01-01

Smectic liquid crystals are phases of rod shaped molecules organized into one dimensionally (1D) periodic arrays of layers, each layer being between one and two molecular lengths thick. In the least ordered smectic phases, the smectics A and C, each layer is a two dimensional (2D) liquid. Additionally there are a variety of more ordered smectic phases having hexatic short range translational order or 2D crystalline quasi long range translational order within the layers. The inherent fluid-layer structure and low vapor pressure of smectic liquid crystals enable the long term stabilization of freely suspended, single component, layered fluid films as thin as 30A, a single molecular layer. The layering forces the films to be an integral number of smectic layers thick, quantizing their thickness in layer units and forcing a film of a particular number of layers to be physically homogeneous with respect to its layer structure over its entire area. Optical reflectivity enables the precise determination of the number of layers. These ultrathin freely suspended liquid crystal films are structures of fundamental interest in condensed matter and fluid physics. They are the thinnest known stable condensed phase fluid structures and have the largest surface-to-volume ratio of any stable fluid preparation, making them ideal for the study of the effects of reduced dimensionality on phase behavior and on fluctuation and interface phenomena. Their low vapor pressure and quantized thickness enable the effective use of microgravity to extend the study of basic capillary phenomena to ultrathin fluid films. Freely suspended films have been a wellspring of new liquid crystal physics. They have been used to provide unique experimental conditions for the study of condensed phase transitions in two dimensions. They are the only system in which the hexatic has been unambiguously identified as a phase of matter, and the only physical system in which fluctuations of a 2D XY system and Kosterlitz Thouless phase transition has been observed and 2D XY quasi long range order verified. Smectic films have enabled the precise determination of smectic layer electron density and positional fluctuation profile and have been used to show that the interlayer interactions in anti-ferroelectric tilted smectics do not extend significantly beyond nearest neighbors. The interactions which are operative in liquid crystals are generally weak in comparison to those in crystalline phases, leading to the facile manipulation of the order in liquid crystals by external agents such as applied fields and surfaces. Effects arising from weak ordering are significantly enhanced in ultrathin free films and filaments wherein the intermolecular coupling is effectively reduced by loss of neighbors. Over the past four years this research, which we now detail, has produced a host of exciting new discoveries and unexpected results, maintaining the position of the study of freely suspended liquid crystal structures as one of most exciting and fruitful areas of complex fluid physics. In addition, several potentially interesting microgravity free film experiments have been identified.

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information

DOE PAGES

Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; ...

2014-11-10

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe 2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe 2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe 2 and EG. Vertical transport measurements across the WSe 2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supportedmore » by density functional theory that predicts a 1.6 eV barrier for transport from WSe 2 to graphene.« less

Synthesis, structure and magnetic properties ofβ-MnO2nanorods

PubMed Central

Kim, HaeJin; Lee, JinBae; Kim, Young-Min; Jung, Myung-Hwa; Jagličić, Z; Umek, P

2007-01-01

We present synthesis, structure and magnetic properties of structurally well-ordered single-crystalline β-MnO2nanorods of 50–100 nm diameter and several µm length. Thorough structural characterization shows that the basic β-MnO2material is covered by a thin surface layer (∼2.5 nm) of α-Mn2O3phase with a reduced Mn valence that adds its own magnetic signal to the total magnetization of the β-MnO2nanorods. The relatively complicated temperature-dependent magnetism of the nanorods can be explained in terms of a superposition of bulk magnetic properties of spatially segregated β-MnO2and α-Mn2O3constituent phases and the soft ferromagnetism of the thin interface layer between these two phases.

Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

NASA Astrophysics Data System (ADS)

Kihara, Takashi; Harada, Toshihiro; Kato, Masahiro; Nakano, Kiyoshi; Murakami, Osamu; Kikusui, Takefumi; Koshida, Nobuyoshi

2006-01-01

As one of the functional properties of ultrasound generator based on efficient thermal transfer at the nanocrystalline silicon (nc-Si) layer surface, its potential as an ultrasonic simulator of vocalization signals is demonstrated by using the acoustic data of mouse-pup calls. The device composed of a surface-heating thin-film electrode, an nc-Si layer, and a single-crystalline silicon (c-Si) wafer, exhibits an almost completely flat frequency response over a wide range without any mechanical surface vibration systems. It is shown that the fabricated emitter can reproduce digitally recorded ultrasonic mouse-pups vocalizations very accurately in terms of the call duration, frequency dispersion, and sound pressure level. The thermoacoustic nc-Si device provides a powerful physical means for the understanding of ultrasonic communication mechanisms in various living animals.

Large magnetic field-induced work output in a NiMnGa seven-layered modulated martensite

NASA Astrophysics Data System (ADS)

Pagounis, E.; Szczerba, M. J.; Chulist, R.; Laufenberg, M.

2015-10-01

We report the performance of a Ni-Mn-Ga single crystal with a seven-layered lattice modulation (14M martensite), demonstrating large actuation work output driven by an external magnetic field. A magnetic field-induced strain of 11.2%, a twinning stress of 0.64 MPa, and a magneto-crystalline anisotropy energy of 195 kJ/m3 are measured at room temperature, which exceed the best results reported in Ni-Mn-Ga 14M martensites. The produced magnetically induced work output of about 70 kJ/m3 makes the material attractive for actuator applications. Detailed XRD investigation reveals that the studied 14M martensite is stress-induced. With increasing compression stress, the stress-induced intermartensitic transformation sequence 10M → 14M → NM was demonstrated.

Ferromagnetic resonance of Ni wires fabricated on ferroelectric LiNbO3 substrate for studying magnetic anisotropy induced by the heterojunction

NASA Astrophysics Data System (ADS)

Yamaguchi, Akinobu; Nakao, Akiko; Ohkochi, Takuo; Yasui, Akira; Kinoshita, Toyohiko; Utsumi, Yuichi; Saiki, Tsunemasa; Yamada, Keisuke

2018-05-01

The electrical ferromagnetic resonance of micro-scale Ni wires with magnetic anisotropy induced by the heterojunction between the Ni layer and ferroelectric single crystalline LiNbO3 substrate was demonstrated by using rectifying effect. The two resonance modes were observed in the Ni wire aligned parallel to the applied magnetic field in plane. The lower resonance frequency mode is considered to correspond to the normal resonance mode with domain resonance, while the higher resonance mode is attributed to the mode which is contributed by the heterojunction between the Ni layer and LiNbO3 substrate. Our results manifest that the rectifying electrical detections are very useful for understating and evaluating the magnetic properties induced by the heterojunction.

Si-Ge-metal ternary phase diagram calculations

NASA Technical Reports Server (NTRS)

Fleurial, J. P.; Borshchevsky, A.

1990-01-01

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

PubMed

Lv, Ruitao; Robinson, Joshua A; Schaak, Raymond E; Sun, Du; Sun, Yifan; Mallouk, Thomas E; Terrones, Mauricio

2015-01-20

CONSPECTUS: In the wake of the discovery of the remarkable electronic and physical properties of graphene, a vibrant research area on two-dimensional (2D) layered materials has emerged during the past decade. Transition metal dichalcogenides (TMDs) represent an alternative group of 2D layered materials that differ from the semimetallic character of graphene. They exhibit diverse properties that depend on their composition and can be semiconductors (e.g., MoS2, WS2), semimetals (e.g., WTe2, TiSe2), true metals (e.g., NbS2, VSe2), and superconductors (e.g., NbSe2, TaS2). The properties of TMDs can also be tailored according to the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. For example, 2H-MoS2 is semiconducting, whereas 1T-MoS2 is metallic. Bulk 2H-MoS2 possesses an indirect band gap, but when 2H-MoS2 is exfoliated into monolayers, it exhibits direct electronic and optical band gaps, which leads to enhanced photoluminescence. Therefore, it is important to learn to control the growth of 2D TMD structures in order to exploit their properties in energy conversion and storage, catalysis, sensing, memory devices, and other applications. In this Account, we first introduce the history and structural basics of TMDs. We then briefly introduce the Raman fingerprints of TMDs of different layer numbers. Then, we summarize our progress on the controlled synthesis of 2D layered materials using wet chemical approaches, chemical exfoliation, and chemical vapor deposition (CVD). It is now possible to control the number of layers when synthesizing these materials, and novel van der Waals heterostructures (e.g., MoS2/graphene, WSe2/graphene, hBN/graphene) have recently been successfully assembled. Finally, the unique optical, electrical, photovoltaic, and catalytic properties of few-layered TMDs are summarized and discussed. In particular, their enhanced photoluminescence (PL), photosensing, photovoltaic conversion, and hydrogen evolution reaction (HER) catalysis are discussed in detail. Finally, challenges along each direction are described. For instance, how to grow perfect single crystalline monolayer TMDs without the presence of grain boundaries and dislocations is still an open question. Moreover, the morphology and crystal structure control of few-layered TMDs still requires further research. For wet chemical approaches and chemical exfoliation methods, it is still a significant challenge to control the lateral growth of TMDs without expansion in the c-axis direction. In fact, there is plenty of room in the 2D world beyond graphene. We envisage that with increasing progress in the controlled synthesis of these systems the unusual properties of mono- and few-layered TMDs and TMD heterostructures will be unveiled.

Method for fabrication of high temperature superconductors

DOEpatents

Balachandran, Uthamalingam; Ma, Beihai; Miller, Dean

2006-03-14

A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y₂O₃ and then a layer of CeO₂ is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO₂ layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10.degree. to about 40.degree. and YBCO superconductors are used.

Method for fabrication of high temperature superconductors

DOEpatents

Balachandran, Uthamalingam [Hinsdale, IL; Ma, Beihai [Naperville, IL; Miller, Dean [Darien, IL

2009-07-14

A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y.sub.2O.sub.3 and then a layer of CeO.sub.2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO.sub.2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10.degree. to about 40.degree. and YBCO superconductors are used.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Treatment of TNT red water by layer melt crystallization.

PubMed

Jo, Jeong-Hyeon; Ernest, Takyi; Kim, Kwang-Joo

2014-09-15

Treatment of the red water, which is wastewater of 2,4,6- trinitrotoluene (TNT) manufacturing process has been explored using ice crystallization. This study focuses on the formation of ice crystals from the red water in a layer crystallizer under various operating conditions. Among the parameters which affect layer crystallization, attention was given to cooling rate, cooling temperature, sweating rate and concentration of the red water. The study highlights the effect of subcooling and growth rate on purity of the ice crystalline layers produced. After sweating, the COD value of crystalline ice layer was significantly reduced from 10,000 mg/L to below 20mg/L. Most organic contaminants were removed in sweating fractions of 0.5. Eventually, the red water was treated by layer crystallization combined with the sweating process. Copyright © 2014 Elsevier B.V. All rights reserved.

Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi 2Se 3 Single Crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melamed, Celeste L.; Ortiz, Brenden R.; Gorai, Prashun

In this paper, we present an exfoliation method that produces cm 2-area atomically flat surfaces from bulk layered single crystals, with broad applications such as for the formation of lateral heterostructures and for use as substrates for van der Waals epitaxy. Single crystals of Bi 2Se 3 were grown using the Bridgman method and examined with X-ray reciprocal space maps, Auger spectroscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. An indium-bonding exfoliation technique was developed that produces multiple ~100 um thick atomically flat, macroscopic (>1 cm 2) slabs from each Bi 2Se 3 source crystal. Two-dimensional X-ray diffraction and reciprocalmore » space maps confirm the high crystalline quality of the exfoliated surfaces. Atomic force microscopy reveals that the exfoliated surfaces have an average root-mean-square (RMS) roughness of ~0.04 nm across 400 μm 2 scans and an average terrace width of 70 um between step edges. First-principles calculations reveal exfoliation energies of Bi 2Se 3 and a number of other layered compounds, which demonstrate relevance of our method across the field of 2D materials. While many potential applications exist, excellent lattice matching with the III-V alloy space suggests immediate potential for the use of these exfoliated layered materials as epitaxial substrates for photovoltaic development.« less

Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi 2Se 3 Single Crystals

DOE PAGES

Melamed, Celeste L.; Ortiz, Brenden R.; Gorai, Prashun; ...

2017-09-12

In this paper, we present an exfoliation method that produces cm 2-area atomically flat surfaces from bulk layered single crystals, with broad applications such as for the formation of lateral heterostructures and for use as substrates for van der Waals epitaxy. Single crystals of Bi 2Se 3 were grown using the Bridgman method and examined with X-ray reciprocal space maps, Auger spectroscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. An indium-bonding exfoliation technique was developed that produces multiple ~100 um thick atomically flat, macroscopic (>1 cm 2) slabs from each Bi 2Se 3 source crystal. Two-dimensional X-ray diffraction and reciprocalmore » space maps confirm the high crystalline quality of the exfoliated surfaces. Atomic force microscopy reveals that the exfoliated surfaces have an average root-mean-square (RMS) roughness of ~0.04 nm across 400 μm 2 scans and an average terrace width of 70 um between step edges. First-principles calculations reveal exfoliation energies of Bi 2Se 3 and a number of other layered compounds, which demonstrate relevance of our method across the field of 2D materials. While many potential applications exist, excellent lattice matching with the III-V alloy space suggests immediate potential for the use of these exfoliated layered materials as epitaxial substrates for photovoltaic development.« less

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

PubMed Central

Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V.; Valencia, Sergio; Ünal, Akin A.; Rader, Oliver; Fischer, Saskia F.

2016-01-01

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. PMID:27270569

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCO5) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCO5, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanismsmore » associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.« less

Switching of the direction of reflectionless light propagation at exceptional points in non-PT-symmetric structures using phase-change materials.

PubMed

Huang, Yin; Shen, Yuecheng; Min, Changjun; Veronis, Georgios

2017-10-30

We introduce a non-parity-time-symmetric three-layer structure, consisting of a gain medium layer sandwiched between two phase-change medium layers for switching of the direction of reflectionless light propagation. We show that for this structure unidirectional reflectionlessness in the forward direction can be switched to unidirectional reflectionlessness in the backward direction at the optical communication wavelength by switching the phase-change material Ge 2 Sb 2 Te 5 (GST) from its amorphous to its crystalline phase. We also show that it is the existence of exceptional points for this structure with GST in both its amorphous and crystalline phases which leads to unidirectional reflectionless propagation in the forward direction for GST in its amorphous phase, and in the backward direction for GST in its crystalline phase. Our results could be potentially important for developing a new generation of compact active free-space optical devices.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

NASA Astrophysics Data System (ADS)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Electron microscopy observation of TiO2 nanocrystal evolution in high-temperature atomic layer deposition.

PubMed

Shi, Jian; Li, Zhaodong; Kvit, Alexander; Krylyuk, Sergiy; Davydov, Albert V; Wang, Xudong

2013-01-01

Understanding the evolution of amorphous and crystalline phases during atomic layer deposition (ALD) is essential for creating high quality dielectrics, multifunctional films/coatings, and predictable surface functionalization. Through comprehensive atomistic electron microscopy study of ALD TiO2 nanostructures at designed growth cycles, we revealed the transformation process and sequence of atom arrangement during TiO2 ALD growth. Evolution of TiO2 nanostructures in ALD was found following a path from amorphous layers to amorphous particles to metastable crystallites and ultimately to stable crystalline forms. Such a phase evolution is a manifestation of the Ostwald-Lussac Law, which governs the advent sequence and amount ratio of different phases in high-temperature TiO2 ALD nanostructures. The amorphous-crystalline mixture also enables a unique anisotropic crystal growth behavior at high temperature forming TiO2 nanorods via the principle of vapor-phase oriented attachment.

Molecular events during the early stages of aggregation of GNNQQNY: An all atom MD simulation study of randomly dispersed peptides.

PubMed

Srivastava, Alka; Balaji, Petety V

2015-12-01

This study probes the early events during lag phase of aggregation of GNNQQNY using all atom MD simulations in explicit solvent. Simulations were performed by varying system size, temperature and starting configuration. Peptides dispersed randomly in the simulation box come together early on in the simulation and form aggregates. These aggregates are dynamic implying the absence of stabilizing interactions. This facilitates the exploration of alternate arrangements. The constituent peptides sample a variety of conformations, frequently re-orient and re-arrange with respect to each other and dissociate from/re-associate with the aggregate. The size and lifetime of aggregates vary depending upon the number of inter-peptide backbone H-bonds. Most of the aggregates formed are amorphous but crystalline aggregates of smaller size (mainly 2-mers) do appear and sustain for varying durations of time. The peptides in crystalline 2-mers are mostly anti-parallel. The largest crystalline aggregate that appears is a 4-mer in a single sheet and a 4-, 5-, or 6-mer in double layered arrangement. Crystalline aggregates grow either by the sequential addition of peptides, or by the head-on or lateral collision-adhesion of 2-mers. The formation of various smaller aggregates suggests the polymorphic nature of oligomers and heterogeneity in the lag phase. Copyright © 2015 Elsevier Inc. All rights reserved.

Sol-Gel Deposited Double Layer TiO₂ and Al₂O₃ Anti-Reflection Coating for Silicon Solar Cell.

PubMed

Jung, Jinsu; Jannat, Azmira; Akhtar, M Shaheer; Yang, O-Bong

2018-02-01

In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol-gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol-gel derived Al2O3 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol-gel derived TiO2 precursor, which was finally annealed at 400 °C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of ~13.95% with short circuit current (JSC) of 35.27 mA/cm2, open circuit voltage (VOC) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (Rs) as compared to single layer ARCs, resulting in the high VOC and FF.

Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode

NASA Astrophysics Data System (ADS)

Małek, Anna K.; Marszałek, Konstanty W.; Rydosz, Artur M.

2016-12-01

Recently photovoltaics attracts much attention of research and industry. The multidirectional studies are carried out in order to improve solar cells performance, the innovative materials are still searched and existing materials and technology are optimized. In the multilayer structure of CIGS solar cells molybdenum (Mo) layer is used as a back contact. Mo layers meet all requirements for back side electrode: low resistivity, good adhesion to the substrate, high optical reflection in the visible range, columnar structure for Na ions diffusion, formation of an ohmic contact with the ptype CIGS absorber layer, and high stability during the corrosive selenization process. The high adhesion to the substrate and low resistivity in single Mo layer is difficult to be achieved because both properties depend on the deposition parameters, particularly on working gas pressure. Therefore Mo bilayers are applied as a back contact for CIGS solar cells. In this work the Mo layers were deposited by medium frequency sputtering at different process parameters. The effect of substrate temperature within the range of 50°C-200°C and working gas pressure from 0.7 mTorr to 7 mTorr on crystalline structure of Mo layers was studied.

Aluminum surface modification by a non-mass-analyzed nitrogen ion beam

NASA Astrophysics Data System (ADS)

Ohira, Shigeo; Iwaki, Masaya

Non-mass-analyzed nitrogen ion implantation into polycrystal and single crystal aluminum sheets has been carried out at an accelerating voltage of 90 kV and a dose of 1 × 10 18 N ions/cm 2 using a Zymet implanter model Z-100. The pressure during implantation rose to 10 -3 Pa due to the influence of N gas feeding into the ion source. The characteristics of the surface layers were investigated by means of Auger electron spectroscopy (AES), X-ray diffraction (XRD), transmission electron diffraction (TED), and microscopy (TEM). The AES depth profiling shows a rectangular-like distribution of N atoms and little migration of O atoms near the surface. The high dose N-implantation forms c-axis oriented aluminum nitride (AIN) crystallines, and especially irradiation of Al single crystals with N ions leads to the formation of a hcp AlN single crystal. It is concluded that the high dose N-implantation in Al can result in the formation of AlN at room temperature without any thermal annealing. Furthermore, non-mass-analyzed N-implantation at a pressure of 10 -3 Pa of the nitrogen atmosphere causes the formation of pure AlN single crystals in the Al surface layer and consequently it can be practically used for AlN production.

Lead Acetate Based Hybrid Perovskite Through Hot Casting for Planar Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Shin, Gwang Su; Choi, Won-Gyu; Na, Sungjae; Gökdemir, Fatma Pinar; Moon, Taeho

2018-03-01

Flawless coverage of a perovskite layer is essential in order to achieve realistic high-performance planar heterojunction solar cells. We present that high-quality perovskite layers can be efficiently formed by a novel hot casting route combined with MAI (CH3NH3I) and non-halide lead acetate (PbAc2) precursors under ambient atmosphere. Casting temperature is controlled to produce various perovskite microstructures and the resulted crystalline layers are found to be comprised of closely packed islands with a smooth surface structure. Lead acetate employed perovskite solar cells are fabricated using PEDOT:PSS and PCBM charge transporting layers, in p- i- n type planar architecture. Especially, the outstanding open-circuit voltage demonstrates the high crystallinity and dense coverage of the produced perovskite layers by this facile route.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Single-crystalline graphene radio-frequency nanoswitches

NASA Astrophysics Data System (ADS)

Li, Peng; Cui, Tianhong

2015-07-01

Growth of monolayer single-crystalline graphene (SCG) using the low-pressure chemical vapor deposition method is reported. Graphene’s superb quality and single-crystalline nature were characterized and verified by Raman microscopy, atomic force microscopy, and carrier mobility measurement. Radio-frequency (RF) nanoelectromechanical switches based on coplanar waveguide double-clamped SCG membrane were achieved, and the superb properties of SCG enable the switches to operate at a pull-in voltage as low as 1 V, with switch time in the nanosecond regime. Owing to their single-crystalline nature, the switches’ lifetime (>5000 times) is much longer than that of polycrystalline graphene ones reported. The RF devices exhibit good isolation (-30 dB at 40 GHz (Ka band)), which can be further improved by SCG’s conductivity variation due to actuation voltage.

Optimization Methods on Synthesis of Atomically Thin Layered Materials and Heterostructures

NASA Astrophysics Data System (ADS)

Temiz, Selcuk

Two dimensional (2D) materials have emerged as a new class of materials that only a few atoms thick. Owing to their low dimensionality, 2D materials bear rather unusual properties that do not exist in traditional three dimensional (3D) materials. Graphene, a single layer of carbon atoms arrange in a 2D hexagonal lattice, has started the revolutionary progress in materials science and condensed matter physics, and motivated intense research in other 2D materials such as h-BN, and layered metal dichalcogenides. Chemical vapor deposition (CVD) is the most studied bottom-up graphene production method for building the prototypes of next-generation electronic devices due to its scalability; however, there is still not an ultimate consensus of growth mechanisms on control the size and morphology of synthesized-crystals. In order to have better understanding the growth mechanisms, the role of oxygen exposure in the graphene growth has been comprehensively studied. The oxygen gas is introduced into the CVD reactor before and during the growth, and its effects on the morphology, crystallinity, and nucleation density of graphene are systematically studied. It is found that introducing oxygen during growth significantly improves the graphene crystallinity while pre-dosing oxygen before growth reduces the graphene nucleation density. The stacking of graphene and other layered materials in the lateral or vertical geometries can offer extended functionality by exploiting interfacial phenomena, quantum confinement and tunneling, which requires the interface between the layered materials be free of contaminates. The vertical heterostructures of CVD-grown graphene and h-BN single crystals are deeply investigated by analytical scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). It is shown that graphene contamination, undetectable using optical microscopy, is prevalent at the nanoscale, and the interfacial contamination between the layers reduces the interlayer coupling and ultimately undermines the graphene/h-BN heterostructures. Raman spectroscopy is a versatile and non-destructive technique for the identification of structural properties and phonon features of atomically thin layered materials. Especially, the second order resonant Raman spectroscopy, which can be applied to the resonance conditions in energy of the incoming photon and interband transitions of an electron in a crystal lattice, reveals additional phonon modes to typical Raman active modes in a spectra. Various 2D materials, including SnSe2, WSe2, SnS2, and MoTe2, and their heterostructures are fabricated by dry transfer method as a top-down approach. The vibrational characteristics of these 2D materials systems are unambiguously established by using second order Resonant Raman spectroscopy.

Behaviour of the surface hydroxide groups of exfoliated kaolinite in the gas phase and during water adsorption.

PubMed

Táborosi, Attila; Szilágyi, Róbert K

2016-02-14

The chemical and physical properties, and thus the reactivity of phylloaluminosilicates can be tailored by intercalation, delamination, and exfoliation processes. In going from the periodic crystalline to the molecular exfoliated phase, surface defects and modifications gain importance as each face of the phylloaluminosilicate comes in direct contact with the external chemical environment. In this work, we extend our earlier studies on the molecular cluster modelling of exfoliated kaolinite sheets by evaluating the positions and orientations of surface hydroxide groups and bridging oxide anions, as the sites of reactivity. The previous focus on the inner chemical environment of a single kaolinite layer is shifted to the surface exposed octahedral aluminium-hydroxide and tetrahedral silicon-oxide sheets. The combination of semi-empirical, ab initio wave function, and density functional calculations unanimously support the amphoteric nature of the surface hydroxide groups with respect to H-bonding donor/acceptor capabilities. To a lesser extent, we observe the same for the bridging oxide anions. This is in contrast to the crystalline phase, which manifests only donor orientation for maintaining an inter-layer H-bond network. These results suggest that both electrophilic and nucleophilic characteristics of the octahedral and tetrahedral sheets need to be considered during intercalation and concomitant exfoliation of the kaolinite sheets.

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

PubMed

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium phosphate (ACP) environments could also arise from a transient amorphous precursor phase of apatite. Here, we provide an NMR spectroscopy methodology to reveal the origin of these ACP environments in bone mineral or in biomimetic apatite. The 1 H magnetization exchange between protons arising from amorphous and crystalline domains shows unambiguously that an ACP layer coats the apatitic crystalline core of bone et biomimetic apatite platelets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5 Nanowires.

PubMed

Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

2016-10-12

A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge 2 Sb 2 Te 5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

Polarimetry of Pinctada fucata nacre indicates myostracal layer interrupts nacre structure

PubMed Central

Jones, Joshua A.; D'Addario, Anthony J.; Galvez, Enrique J.

2017-01-01

The inner layer of many bivalve and gastropod molluscs consists of iridescent nacre, a material that is structured like a brick wall with bricks consisting of crystalline aragonite and mortar of organic molecules. Myostracal layers formed during shell growth at the point of muscle attachment to the shell can be found interspersed within the nacre structure. Little has been done to examine the effect the myostracal layer has on subsequent nacre structure. Here we present data on the structure of the myostracal and nacre layers from a bivalve mollusc, Pinctada fucata. Scanning electron microscope imaging shows the myostracal layer consists of regular crystalline blocks. The nacre before the layer consists of tablets approximately 400 nm thick, while after the myostracal layer the tablets are approximately 500 nm thick. A new technique, imaging polarimetry, indicates that the aragonite crystals within the nacre following the myostracal layer have greater orientation uniformity than before the myostracal layer. The results presented here suggest a possible interaction between the myostracal layer and subsequent shell growth. PMID:28386442

Crystalline ha coating on peek via chemical deposition

NASA Astrophysics Data System (ADS)

Almasi, D.; Izman, S.; Assadian, M.; Ghanbari, M.; Abdul Kadir, M. R.

2014-09-01

Polyether ether ketone (PEEK) has a similar elastic modulus to bone and can be a suitable alternative to metallic implants. However, PEEK is bioinert and does not integrate well with the surrounding tissues. The current commercial method for solving this problem is by coating PEEK substrates with calcium phosphates via plasma spraying. However, this method produces a low bonding strength between the substrate and the coating layer, as well as non-uniform density of the coating. In this study, chemical deposition was used to deposit HA crystalline particles on PEEK substrate without any subsequent crystallisation process therefore producing crystalline treated layer. EDX results confirmed the deposition of HA, and the XRD results confirmed that the treated layer was crystalline HA. FT-IR analysis confirmed the chemical bonding between HA and the substrate. Surface roughness increased from 24.27 nm to 34.08 nm for 3 min immersion time. The water contact angle showed an increase in wettability of the treated sample from 71.6 to 36.4 degrees, which in turn increased its bioactivity. The proposed method is a suitable alternative to other conventional methods as high temperature was not involved in the process which could damage the surface of the substrate.

Amorphous layer formation in Al86.0Co7.6Ce6.4 glass-forming alloy by large-area electron beam irradiation

NASA Astrophysics Data System (ADS)

Li, C. L.; Murray, J. W.; Voisey, K. T.; Clare, A. T.; McCartney, D. G.

2013-09-01

Amorphous Al-Co-Ce alloys are of interest because of their resistance to corrosion, but high cooling rates are generally required to suppress the formation of crystalline phases. In this study, the surface of a bulk crystalline Al-Co-Ce alloy of a glass-forming composition was treated using large area electron beam (LAEB) irradiation. Scanning electron microscopy shows that, compared to the microstructure of the original crystalline material, the treated surface exhibits greatly improved microstructural and compositional uniformity. Glancing angle X-ray diffraction conducted on the surface of treated samples indicates the formation of the amorphous phase following 25 and 50 pulses at 35 kV cathode voltage. However, when the samples are treated with 100 and 150 pulses at 35 kV cathode voltage of electron beam irradiation, the treated layer comprises localised crystalline regions in an amorphous matrix. In addition, the formation of cracks in the treated layer is found to be localised around the Al8Co2Ce phase in the bulk material. Overall, crack length per unit area had no clear change with an increase in the number of pulses.

Electrical characteristics of organic perylene single-crystal-based field-effect transistors

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kang, Han-Saem; Kim, Min-Ki; Kim, Kihyun; Cho, Mi-Yeon; Kwon, Young-Wan; Joo, Jinsoo; Kim, Jae-Il; Hong, Chang-Seop

2007-12-01

We report on the fabrication of organic field-effect transistors (OFETs) using perylene single crystal as the active material and their electrical characteristics. Perylene single crystals were directly grown from perylene powder in a furnace using a relatively short growth time of 1-3 h. The crystalline structure of the perylene single crystals was characterized by means of a single-crystal x-ray diffractometer. In order to place the perylene single crystal onto the Au electrodes of the field-effect transistor, a polymethlymethacrylate thin layer was spin-coated on top of the crystal surface. The OFETs fabricated using the perylene single crystal showed a typical p-type operating mode. The field-effect mobility of the perylene crystal based OFETs was measured to be ˜9.62×10-4 cm2/V s at room temperature. The anisotropy of the mobility implying the existence of different mobilities when applying currents in different directions was observed for the OFETs, and the existence of traps in the perylene crystal was found through the measurements of the temperature-dependent mobility at various operating drain voltages.

Method and structure for passivating semiconductor material

DOEpatents

Pankove, Jacques I.

1981-01-01

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

Formation of quasi-single crystalline porous ZnO nanostructures with a single large cavity

NASA Astrophysics Data System (ADS)

Cho, Seungho; Kim, Semi; Jung, Dae-Won; Lee, Kun-Hong

2011-09-01

We report a method for synthesizing quasi-single crystalline porous ZnO nanostructures containing a single large cavity. The microwave-assisted route consists of a short (about 2 min) temperature ramping stage (from room temperature to 120 °C) and a stage in which the temperature is maintained at 120 °C for 2 h. The structures produced by this route were 200-480 nm in diameter. The morphological yields of this method were very high. The temperature- and time-dependent evolution of the synthesized powders and the effects of an additive, vitamin C, were studied. Spherical amorphous/polycrystalline structures (70-170 nm in diameter), which appeared transitorily, may play a key role in the formation of the single crystalline porous hollow ZnO nanostructures. Studies and characterization of the nanostructures suggested a possible mechanism for formation of the quasi-single crystalline porous ZnO nanostructures with an interior space.We report a method for synthesizing quasi-single crystalline porous ZnO nanostructures containing a single large cavity. The microwave-assisted route consists of a short (about 2 min) temperature ramping stage (from room temperature to 120 °C) and a stage in which the temperature is maintained at 120 °C for 2 h. The structures produced by this route were 200-480 nm in diameter. The morphological yields of this method were very high. The temperature- and time-dependent evolution of the synthesized powders and the effects of an additive, vitamin C, were studied. Spherical amorphous/polycrystalline structures (70-170 nm in diameter), which appeared transitorily, may play a key role in the formation of the single crystalline porous hollow ZnO nanostructures. Studies and characterization of the nanostructures suggested a possible mechanism for formation of the quasi-single crystalline porous ZnO nanostructures with an interior space. Electronic supplementary information (ESI) available: TEM images and the corresponding SAED image of a ZnO nanostructure synthesized from the reaction without l(+)-ascorbic acid at the 85 °C time point (Fig. S1). See DOI: 10.1039/c1nr10609k

HNO₃-assisted polyol synthesis of ultralarge single-crystalline Ag microplates and their far propagation length of surface plasmon polariton.

PubMed

Chang, Cheng-Wei; Lin, Fan-Cheng; Chiu, Chun-Ya; Su, Chung-Yi; Huang, Jer-Shing; Perng, Tsong-Pyng; Yen, Ta-Jen

2014-07-23

We developed a HNO3-assisted polyol reduction method to synthesize ultralarge single-crystalline Ag microplates routinely. The edge length of the synthesized Ag microplates reaches 50 μm, and their top facets are (111). The mechanism for dramatically enlarging single-crystalline Ag structure stems from a series of competitive anisotropic growths, primarily governed by carefully tuning the adsorption of Ag(0) by ethylene glycol and the desorption of Ag(0) by a cyanide ion on Ag(100). Finally, we measured the propagation length of surface plasmon polaritons along the air/Ag interface under 534 nm laser excitation. Our single-crystalline Ag microplate exhibited a propagation length (11.22 μm) considerably greater than that of the conventional E-gun deposited Ag thin film (5.27 μm).

Synthesis of Large and Few Atomic Layers of Hexagonal Boron Nitride on Melted Copper

PubMed Central

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J.; Liu, Hua Kun

2015-01-01

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1–10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics. PMID:25582557

Development of a new low cost antireflective coating technique for solar cells

NASA Technical Reports Server (NTRS)

Wohlgemuth, J. H.; Warfield, D. B.; Johnson, G. A.

1982-01-01

The goal of this study was the development of an antireflective (AR) coating technique that has the potential for high throughput and low cost yet is capable of producing films of good optical quality. Previous efforts to develop sprayed AR coatings had utilized titanium isopropoxide mixed with volatile solvents. These films worked well on smooth surfaces but when applied to etched semi-crystalline silicon surfaces yielded inconsistent results with more than 20 percent of the AM1 incident light being reflected. In this program titanium isopropoxide was sprayed directly onto heater wafers (410 C) to produce a uniform AR coating even on highly textured surfaces. Tests on various types of solar cells yielded performance improvements for the hot sprayed AR cells that are equivalent to that observed for evaporated TiOx AR coated cells. As an extension of this effort a new double layer AR consisting of a bottom layer of hot sprayed titanium isopropoxide and a top layer of hot sprayed aluminum isopropoxide in methylene chloride has resulted in more than 10 percent improvement in cell output as compared to a single layer AR cell.

High-pressure polymorphism of As2S3 and new AsS2 modification with layered structure

NASA Astrophysics Data System (ADS)

Bolotina, N. B.; Brazhkin, V. V.; Dyuzheva, T. I.; Katayama, Y.; Kulikova, L. F.; Lityagina, L. V.; Nikolaev, N. A.

2014-01-01

At normal pressure, the As2S3 compound is the most stable equilibrium modification with unique layered structure. The possibility of high-pressure polymorphism of this substance remains questionable. Our research showed that the As2S3 substance was metastable under pressures P > 6 GPa decomposing into two high-pressure phases: As2S3 → AsS2 + AsS. New AsS2 phase can be conserved in the single crystalline form in metastable state at room pressure up to its melting temperature (470 K). This modification has the layered structure with P1211 monoclinic symmetry group; the unit-cell values are a = 7.916(2) Å, b = 9.937(2) Å, c = 7.118(1) Å, β = 106.41° ( Z = 8, density 3.44 g/cm3). Along with the recently studied AsS high-pressure modification, the new AsS2 phase suggests that high pressure polymorphism is a very powerful tool to create new layered-structure phases with "wrong" stoichiometry.

Synthesis of large and few atomic layers of hexagonal boron nitride on melted copper.

PubMed

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J; Liu, Hua Kun

2015-01-13

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1-10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics.

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

PubMed

Qiu, Dongri; Kim, Eun Kyu

2015-09-03

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

NASA Astrophysics Data System (ADS)

Qiu, Dongri; Kim, Eun Kyu

2015-09-01

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution

PubMed Central

Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

2015-01-01

Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co3+/4+ ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions. PMID:26456525

Reversible amorphization and the catalytically active state of crystalline Co3O4 during oxygen evolution.

PubMed

Bergmann, Arno; Martinez-Moreno, Elias; Teschner, Detre; Chernev, Petko; Gliech, Manuel; de Araújo, Jorge Ferreira; Reier, Tobias; Dau, Holger; Strasser, Peter

2015-10-12

Water splitting catalysed by earth-abundant materials is pivotal for global-scale production of non-fossil fuels, yet our understanding of the active catalyst structure and reactivity is still insufficient. Here we report on the structurally reversible evolution of crystalline Co3O4 electrocatalysts during oxygen evolution reaction identified using advanced in situ X-ray techniques. At electrode potentials facilitating oxygen evolution, a sub-nanometre shell of the Co3O4 is transformed into an X-ray amorphous CoOx(OH)y which comprises di-μ-oxo-bridged Co(3+/4+) ions. Unlike irreversible amorphizations, here, the formation of the catalytically-active layer is reversed by re-crystallization upon return to non-catalytic electrode conditions. The Co3O4 material thus combines the stability advantages of a controlled, stable crystalline material with high catalytic activity, thanks to the structural flexibility of its active amorphous oxides. We propose that crystalline oxides may be tailored for generating reactive amorphous surface layers at catalytic potentials, just to return to their stable crystalline state under rest conditions.

Interfacial crystalline structures in injection over-molded polypropylene and bond strength.

PubMed

Yan, Bowen; Wu, Hong; Jiang, Genjie; Guo, Shaoyun; Huang, Jian

2010-11-01

This paper describes interfacial crystalline structures found in injection overmolded polypropylene components and the relationship of these structures to bond strength between the components. The combined effects of the development of hierarchical gradient structures and the particular thermomechanical environment near the interface on the interfacial crystalline structures were investigated in detail by PLM, SEM, DSC, WAXD, and infrared dichroism spectroscopy. The experimental results showed that during molding there was competitive formation of interfacial crystalline structures consisted of "shish-kebab" layer (SKL) and a transcrystalline layers (TCL). Variation in shear stress (controlled by injection pressure and injection speed) plays an important role in the formation of the SKL. The formation of TCL is influenced by the thermal environment, namely melt temperature and mold temperature. Increasing within certain limits, interfacial temperature and the thermal gradient near the interface promotes β-iPP growth. The relationship between interfacial crystalline structures and interfacial bond strength was established by lap shear measurement. The interfacial bond strength is improved by enhancing the formation of TCL, but reduced if SKL predominates.

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Pei-Yu; Posadas, Agham B.; Kwon, Sunah; Wang, Qingxiao; Kim, Moon J.; Demkov, Alexander A.; Ekerdt, John G.

2017-12-01

Growth of crystalline Er2O3, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH4OH solutions and an in situ N2 plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry of 1.02. Using atomic layer deposition with erbium tris(isopropylcyclopentadienyl) [Er(iPrCp)3] and water, crystalline cubic Er2O3 (C-Er2O3) is grown on GaN at 250 °C. The orientation relationships between the C-Er2O3 film and the GaN substrate are C-Er2O3(222) ǁ GaN(0001), C-Er2O3⟨-440⟩ ǁ GaN ⟨11-20⟩, and C-Er2O3⟨-211⟩ ǁ GaN ⟨1-100⟩. Scanning transmission electron microscopy and electron energy loss spectroscopy are used to examine the microstructure of C-Er2O3 and its interface with GaN. With post-deposition annealing at 600 °C, a thicker interfacial layer is observed, and two transition layers, crystalline GaNwOz and crystalline GaErxOy, are found between GaN and C-Er2O3. The tensile strain in the C-Er2O3 film is studied with x-ray diffraction by changes in both out-of-plane and in-plane d-spacing. Fully relaxed C-Er2O3 films on GaN are obtained when the film thickness is around 13 nm. Additionally, a valence band offset of 0.7 eV and a conduction band offset of 1.2 eV are obtained using x-ray photoelectron spectroscopy.

Silver-free solar cell interconnection by laser spot welding of thin aluminum layers: analysis of process limits for ns- and μs-lasers

NASA Astrophysics Data System (ADS)

Schulte-Huxel, H.; Blankemeyer, S.; Kajari-Schröder, S.; Brendel, R.

2014-03-01

We investigate a laser welding process for contacting aluminum metallized crystalline silicon solar cells to a 10-μm-thick aluminum layers on a glass substrate. The reduction of the solar cell metallization thickness is analyzed with respect to laser induced damage using SiNx passivated silicon wafers. Additionally, we measure the mechanical stress of the laser welds by perpendicular tear-off as well as the electrical contact resistance. We apply two types of laser processes; one uses one to eight 20-ns-laser pulses at 355 nm with fluences between 12 and 40 J/cm2 and the other single 1.2-μs-laser pulses at 1064 nm with 33 to 73 J/cm2. Ns laser pulses can contact down to 1-μm-thick aluminum layers on silicon without inducing laser damage to the silicon and lead to sufficient strong mechanical contact. In case of μs laser pulses the limiting thickness is 2 μm.

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R., Jr. (Inventor); Stoakley, Diane M. (Inventor)

2009-01-01

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277

Targeted Single-Site MOF Node Modification: Trivalent Metal Loading via Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, In Soo; Borycz, Joshua; Platero-Prats, Ana E.

Postsynthetic functionalization of metal organic frameworks (MOFs) enables the controlled, high-density incorporation of new atoms on a crystallographically precise framework. Leveraging the broad palette of known atomic layer deposition (ALD) chemistries, ALD in MOFs (AIM) is one such targeted approach to construct diverse, highly functional, few-atom clusters. We here demonstrate the saturating reaction of trimethylindium (InMe3) with the node hydroxyls and ligated water of NU-1000, which takes place without significant loss of MOF crystallinity or internal surface area. We computationally identify the elementary steps by which trimethylated trivalent metal compounds (ALD precursors) react with this Zr-based MOF node to generatemore » a uniform and well characterized new surface layer on the node itself, and we predict a final structure that is fully consistent with experimental X-ray pair distribution function (PDF) analysis. We further demonstrate tunable metal loading through controlled number density of the reactive handles (-OH and -OH2) achieved through node dehydration at elevated temperatures.« less

Anisotropic dielectric phase transition triggered by pendulum-like motion coupled with proton transfer in a layered hybrid crystalline material (4-nitroanilinium+) (18-crown-6) (H2PO4-) (H3PO4)2

NASA Astrophysics Data System (ADS)

Liu, Yang; Zhu, Chun-li; Qin, Liu-lei; Zheng, Xiao-yuan; Liu, Zun-qi

2018-07-01

The organic-inorganic hybrid phase-transition material, (4-nitroanilinium+) (18-crown-6) (H2PO4-) (H3PO4)2 (1), was successfully synthesized. The organic (4-nitroanilinium) (18-crown-6)+ supramolecular cation layer and inorganic phosphate anion layer were arranged alternately. Differential scanning calorimetry (DSC), temperature-dependent dielectric measurements, and variable-temperature single-crystal X-ray diffraction analysis confirmed the reversible isostructural phase transition of 1 with the same space group Pbca at 225 K, wherein the synergistic effect between the pendulum-like motion of organic cations and the proton transfer in the Osbnd H⋯O hydrogen bonding of inorganic anions was mainly responsible for the phase-transition behavior of 1. The most striking dielectric property was the remarkable anisotropy along various crystallographic axes. A potential-energy calculation further supported the possibility of dynamic motion of cations in the crystal.

In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

NASA Astrophysics Data System (ADS)

Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

2014-07-01

Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

Formation of Porous Germanium Layers by Silver-Ion Implantation

NASA Astrophysics Data System (ADS)

Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

2018-04-01

We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

Spontaneous perpendicular exchange bias effect in L10-MnGa/FeMn bilayers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wei, D. H.; Zhao, J. H.

2018-01-01

We report on the spontaneous perpendicular exchange bias effect in as-grown L10-MnGa/FeMn bilayers. An FeMn layer with different thicknesses is introduced as an antiferromagnetic layer to couple with single-crystalline ferromagnetic L10-MnGa, which is epitaxially grown on a GaAs (001) substrate by molecular-beam epitaxy. The perpendicular exchange bias shows a strong dependence on both the thickness of the FeMn layer and the measurement temperature. A large spontaneous perpendicular exchange bias up to 8.9 kOe is achieved in L10-MnGa/FeMn bilayers at 5 K without any external magnetic treatment. The corresponding effective interfacial exchange energy Jeff is estimated to be 1.4 mJ/m2. The spontaneous perpendicular exchange bias effect in the (001) textured L10-MnGa/FeMn bilayers paves the way for spintronic devices based on exchange biased perpendicularly magnetized materials.

Native oxide formation on pentagonal copper nanowires: A TEM study

NASA Astrophysics Data System (ADS)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

Optimum design calculations for detectors based on ZnSe(Те,О) scintillators

NASA Astrophysics Data System (ADS)

Katrunov, K.; Ryzhikov, V.; Gavrilyuk, V.; Naydenov, S.; Lysetska, O.; Litichevskyi, V.

2013-06-01

Light collection in scintillators ZnSe(X), where X is an isovalent dopant, was studied using Monte Carlo calculations. Optimum design was determined for detectors of "scintillator—Si-photodiode" type, which can involve either one scintillation element or scintillation layers of large area made of small-crystalline grains. The calculations were carried out both for determination of the optimum scintillator shape and for design optimization of light guides, on the surface of which the layer of small-crystalline grains is formed.

Reaction of Rb and oxygen overlayers with single-crystalline Bi2Sr2CaCu2O8+δ superconductors

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Shen, Z.-X.; Wells, B. O.; Dessau, D. S.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1989-02-01

Single crystals of Bi2Sr2CaCu2O8+δ superconductors, in situ cleaved and modified by Rb and oxygen overlayers, have been studied using ultraviolet and x-ray photoemission spectroscopy. The core-level results show that Rb strongly reacts with the Bi and O states, while the Cu and Sr states are left unchanged. This observation strongly indicates that the Bi-O plane forms the surface layer. Subsequent exposure to oxygen results in new oxygen states at the surface as monitored by the O 1s core-level data. For both Rb and oxygen overlayers the valence-band spectra are severely altered. In particular, new valence-band states, presumably of oxygen character, are formed.

The spectral properties of interplanetary dust particles

NASA Technical Reports Server (NTRS)

Sandford, Scott A.

1988-01-01

The observed spectral and mineralogical properties of interplanetary dust particles (IDP) allows the conclusion that: (1) the majority of IDP infrared spectra are dominated by olivine, pyroxene, or layer lattice silicate minerals, (2) to the first order the emission spectra of comets Halley and Kohoutek can be matched by mixtures of these IDP infrared types, implying that comets contain mixtures of these different crystalline silicates and may vary from comet to comet and perhaps even within a single comet, (3) do not expect to observe a single 20 micron feature in cometary spectra, (4) carbonaceous materials dominate the visible spectra properties of the IDPs even though the mass in these particles consists primarily of silicates, and (5) the particle characteristics summarized need to be properly accounted for in future cometary emission models.

Interfacial growth of large-area single-layer metal-organic framework nanosheets

PubMed Central

Makiura, Rie; Konovalov, Oleg

2013-01-01

The air/liquid interface is an excellent platform to assemble two-dimensional (2D) sheets of materials by enhancing spontaneous organizational features of the building components and encouraging large length scale in-plane growth. We have grown 2D molecularly-thin crystalline metal-organic-framework (MOF) nanosheets composed of porphyrin building units and metal-ion joints (NAFS-13) under operationally simple ambient conditions at the air/liquid interface. In-situ synchrotron X-ray diffraction studies of the formation process performed directly at the interface were employed to optimize the NAFS-13 growth protocol leading to the development of a post-injection method –post-injection of the metal connectors into the water subphase on whose surface the molecular building blocks are pre-oriented– which allowed us to achieve the formation of large-surface area morphologically-uniform preferentially-oriented single-layer nanosheets. The growth of such large-size high-quality sheets is of interest for the understanding of the fundamental physical/chemical properties associated with ultra-thin sheet-shaped materials and the realization of their use in applications. PMID:23974345

Confined-plume chemical deposition: rapid synthesis of crystalline coatings of known hard or superhard materials on inorganic or organic supports by resonant IR decomposition of molecular precursors.

PubMed

Ivanov, Borislav L; Wellons, Matthew S; Lukehart, Charles M

2009-08-26

A one-step process for preparing microcrystalline coatings of known superhard, very hard, or ultraincompressible ceramic compositions on either inorganic or organic supports is reported. Midinfrared pulsed-laser irradiation of preceramic chemical precursors layered between IR-transmissive hard/soft supports under temporal and spatial confinement at a laser wavelength resonant with a precursor vibrational band gives one-step deposition of crystalline ceramic coatings without incurring noticeable collateral thermal damage to the support material. Reaction plume formation at the precursor/laser beam interface initiates confined-plume, chemical deposition (CPCD) of crystalline ceramic product. Continuous ceramic coatings are produced by rastering the laser beam over a sample specimen. CPCD processing of the Re-B single-source precursor, (B(3)H(8))Re(CO)(4), the dual-source mixtures, Ru(3)(CO)(12)/B(10)H(14) or W(CO)(6)/B(10)H(14), and the boron/carbon single-source precursor, o-B(10)C(2)H(12), confined between Si wafer or NaCl plates gives microcrystalline deposits of ReB(2), RuB(2), WB(4), or B(4)C, respectively. CPCD processing of Kevlar fabric wetted by (B(3)H(8))Re(CO)(4) produces an oriented, microcrystalline coating of ReB(2) on the Kevlar fabric without incurring noticeable thermal damage of the polymer support. Similarly, microcrystalline coatings of ReB(2) can be formed on IR-transmissive IR2, Teflon, or Ultralene polymer films.

ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

NASA Astrophysics Data System (ADS)

Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

UNDERSTANDING HARD ROCK HYDROGEOLOGY THROUGH AN EXPERIMENTAL HYDROGEOLOGICAL PARK IN SOUTH INDIA: Site development and investigations on the major role of the fractured zone in crystalline aquifers

NASA Astrophysics Data System (ADS)

Ahmed, S.; Guiheneuf, N.; Boisson, A.; Marechal, J.; Chandra, S.; Dewandel, B.; Perrin, J.

2012-12-01

In water stressed south India most of the groundwater used for irrigation is pumped from crystalline rocks aquifers. In those structures groundwater flow dominantly occur in a shallow higher-permeability zone that overlies a deeper lower-permeability zone hosting little flow. The fractured zone of the weathering profile plays an important role for groundwater. In order to understand clearly this impact on water availability and quality changes the Experimental Hydrogeological Park at Choutuppal, Andhra Pradesh, India is developed in the framework of the SORE H+ network. Several hydraulic tests (injection, flowmeter profiles, single-packer tests…) and geophysical measurements (ERT, Borehole logging…) are carried out on the site in order to characterize the depth-dependence of hydrodynamic parameters in the Indian Archean granite. Specific investigation on a borewell through packer tests demonstrate that the most conductive part of the aquifer corresponds to the upper part of the fractured layer, located just below the saprolite bottom, between 15 meters and 20 meters depth. There is no highly conductive fracture beyond 20 meters depth and no indication for any conductive fracture beyond 25 meters depth. Packer tests show that the upper part of the fractured layer (15-20 m depth) is characterized by a good vertical connectivity. On the contrary, the tests carried out below 20 m depth show no vertical connectivity at all. The geometry of the fracture network and associated hydrodynamic parameters are in agreement with the conceptual model of hard-rock aquifers that derive its properties from weathering processes. The general existence of such a highly conductive structure at the top of the fractured zone has a great impact on water prospection and exploitation in such crystalline aquifers.

Preferential orientation of metal oxide superconducting materials by mechanical means

DOEpatents

Capone, Donald W.

1990-01-01

A superconductor comprised of a polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0<.times.<0.5) is capable of accommodating very large current densities. By aligning the two-dimensional Cu--O layers which carry the current in the superconducting state in the a- and b-directions, i.e., within the basal plane, a high degree of crystalline axes alignment is provided between adjacent grains permitting the metal oxide material to accommodate high current densities. The orthorhombic crystalline particles have a tendency to lie down on one of the longer sides, i.e., on the a- or b-direction. Aligning the crystals in this orientation is accomplished by mechanical working of the material such as by extrusion, tape casting or slip casting, provided a single crystal powder is used as a starting material, to provide a highly oriented, e.g., approximately 90% of the crystal particles have a common orientation, superconducting matrix capable of supporting large current densities.

Preferential orientation of metal oxide superconducting materials by mechanical means

DOEpatents

Capone, D.W.

1990-11-27

A superconductor comprised of a polycrystalline metal oxide such as YBa[sub 2]Cu[sub 3]O[sub 7[minus]X] (where 0 < X < 0.5) is capable of accommodating very large current densities. By aligning the two-dimensional Cu-O layers which carry the current in the superconducting state in the a- and b-directions, i.e., within the basal plane, a high degree of crystalline axes alignment is provided between adjacent grains permitting the metal oxide material to accommodate high current densities. The orthorhombic crystalline particles have a tendency to lie down on one of the longer sides, i.e., on the a- or b-direction. Aligning the crystals in this orientation is accomplished by mechanical working of the material such as by extrusion, tape casting or slip casting, provided a single crystal powder is used as a starting material, to provide a highly oriented, e.g., approximately 90% of the crystal particles have a common orientation, superconducting matrix capable of supporting large current densities. 3 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varela, Maria; Scigaj, Mateusz; Gazquez, Jaume

Interfaces between (110) and (111)SrTiO 3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO 3 (a-LAO), Y:ZrO 2 (a-YSZ), and SrTiO 3 (a-STO) become conducting above a critical thickness t c. Here we show that t c for a-LAO does not depend on the substrate orientation, i.e. t c (a-LAO/(110)STO) ≈ t c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t c(a-LAO/(110)STO) < t c(a-YSZ/(110)STO) < t c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather thanmore » orientation-dependent enthalpy vacancy formation and diffusion. Furthermore, scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.« less

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film.

PubMed

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-21

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

NASA Astrophysics Data System (ADS)

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-01

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Multiferroic composites for magnetic data storage beyond the super-paramagnetic limit

NASA Astrophysics Data System (ADS)

Vopson, M. M.; Zemaityte, E.; Spreitzer, M.; Namvar, E.

2014-09-01

Ultra high-density magnetic data storage requires magnetic grains of <5 nm diameters. Thermal stability of such small magnetic grain demands materials with very large magneto-crystalline anisotropy, which makes data write process almost impossible, even when Heat Assisted Magnetic Recording (HAMR) technology is deployed. Here, we propose an alternative method of strengthening the thermal stability of the magnetic grains via elasto-mechanical coupling between the magnetic data storage layer and a piezo-ferroelectric substrate. Using Stoner-Wohlfarth single domain model, we show that the correct tuning of this coupling can increase the effective magneto-crystalline anisotropy of the magnetic grains making them stable beyond the super-paramagnetic limit. However, the effective magnetic anisotropy can also be lowered or even switched off during the write process by simply altering the applied voltage to the substrate. Based on these effects, we propose two magnetic data storage protocols, one of which could potentially replace HAMR technology, with both schemes promising unprecedented increases in the data storage areal density beyond the super-paramagnetic size limit.

Influence of coating steps of perovskite on low-temperature amorphous compact TiO x upon the morphology, crystallinity, and photovoltaic property correlation in planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Shahiduzzaman, Md.; Furumoto, Yoshikazu; Yamamoto, Kohei; Yonezawa, Kyosuke; Azuma, Yosuke; Kitamura, Michinori; Matsuzaki, Hiroyuki; Karakawa, Makoto; Kuwabara, Takayuki; Takahashi, Kohshin; Taima, Tetsuya

2018-03-01

The fabrication of high-efficiency solution-processable perovskite solar cells has been achieved using mesostructured films and compact titanium dioxide (TiO2) layers in a process that involves high temperatures and cost. Here, we present an efficient approach for fabricating chemical-bath-deposited, low-temperature, and low-cost amorphous compact TiO x -based planar heterojunction perovskite solar cells by one-step and two-step coatings of the perovskite layer. We also investigate the effect of the number of perovskite coating steps on the compact TiO x layer. The grazing incidence wide-angle X-ray scattering technique is used to clarify the relationship between morphology, crystallinity, and photovoltaic properties of the resulting devices. Analysis of the films revealed that one-step spin-coating of perovskite exhibited an enhancement of film quality and crystallization that correlates to photovoltaic performance 1.5 times higher than that of a two-step-coated device. Our findings show that the resulting morphology, crystallinity, and device performances are strongly dependent on the number of coating steps of the perovskite thin layer on the compact TiO x layer. This result is useful knowledge for the low-cost production of planar perovskite solar cells.

Large-scale fabrication of single crystalline tin nanowire arrays.

PubMed

Luo, Bin; Yang, Dachi; Liang, Minghui; Zhi, Linjie

2010-09-01

Large-scale single crystalline tin nanowire arrays with preferred lattice orientation along the [100] direction were fabricated in porous anodic aluminium oxide (AAO) membranes by the electrodeposition method using copper nanorod as a second electrode.

Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

NASA Astrophysics Data System (ADS)

Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

2018-04-01

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 < d < 20 nm in size are applied on InGaN/GaN multiple quantum well structures with surface morphology less nonuniform than that of ZnO films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

Sponge-like nanoporous single crystals of gold

PubMed Central

Khristosov, Maria Koifman; Bloch, Leonid; Burghammer, Manfred; Kauffmann, Yaron; Katsman, Alex; Pokroy, Boaz

2015-01-01

Single crystals in nature often demonstrate fascinating intricate porous morphologies rather than classical faceted surfaces. We attempt to grow such crystals, drawing inspiration from biogenic porous single crystals. Here we show that nanoporous single crystals of gold can be grown with no need for any elaborate fabrication steps. These crystals are found to grow following solidification of a eutectic composition melt that forms as a result of the dewetting of nanometric thin films. We also present a kinetic model that shows how this nano-porous single-crystalline structure can be obtained, and which allows the potential size of the porous single crystal to be predicted. Retaining their single-crystalline nature is due to the fact that the full crystallization process is faster than the average period between two subsequent nucleation events. Our findings clearly demonstrate that it is possible to form single-crystalline nano porous metal crystals in a controlled manner. PMID:26554856

On the nature of the reversibility of hydration-dehydration on the crystal structure and magnetism of the ferrimagnet [MnII(enH)(H2O)][CrIII(CN)6].H2O.

PubMed

Yoshida, Yusuke; Inoue, Katsuya; Kurmoo, Mohamedally

2009-01-05

We report the synthesis, crystal structure, and thermal and magnetic properties of the two-dimensional achiral soft ferrimagnet [Mn(II)(enH)(H(2)O)][Cr(III)(CN)(6)].H(2)O (1), en = 1,2-diaminoethane, as well as the recyclability of the dehydration and rehydration and their influence on the crystal structure and its magnetic properties. Unlike [Mn(S-pnH)(H(2)O)][Cr(CN)(6)].H(2)O (2S, pn = 1,2-diaminopropane), which is a chiral (P2(1)2(1)2(1)) enantiopure ferrimagnet (T(C) = 38 K), 1 crystallizes in the achiral orthorhombic Pcmn space group, having a similar two-dimensional square network of Mn-Cr with bridging cyanide, and 1 behaves also as a soft ferrimagnet (T(C) = 42 K). X-ray diffraction experiments on a single crystal of 1 indicate a transformation from a single crystal to an amorphous phase upon dehydrataion and partial recovery of its crystallinity upon rehydration. The dehydrated phase 1-DP exhibits long-range ordering at 75 K to a ferrimagnetic state and coercive field at 2 K of 100 Oe, which are a higher critical temperature and coercive field than for the virgin sample (H(C) = 60 Oe). Thermogravimetric analyses indicate that the crystallinity deteriorates upon hydration-dehydration cycling, with persistence toward the amorphous phase, as also seen by magnetization measurements. This effect is associated with an increase of statistical disorder inherent in the dehydration-rehydration process. X-ray powder diffraction suggests that 1-DP may retain order within the layers but loses coherence in the stacking of the layers.

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

Observations on the development of the crystalline bacterial biofilms that encrust and block Foley catheters.

PubMed

Stickler, D J; Morgan, S D

2008-08-01

The care of many patients undergoing long-term bladder catheterisation is complicated when the flow of urine through the catheter is blocked by encrustation. The problem results from infection by urease-producing bacteria, especially Proteus mirabilis, and the subsequent formation of crystalline biofilms on the catheter. The aim of this study was to discover how P. mirabilis initiates the development of these crystalline biofilms. The early stages in the formation of the biofilms were observed on a range of Foley catheters in a laboratory model of the catheterised bladder. Scanning electron micrographs revealed that when all-silicone, silicone-coated latex, hydrogel-coated latex, hydrogel/silver-coated latex and nitrofurazone silicone catheters were inserted into bladder models containing P. mirabilis and alkaline urine, their surfaces were rapidly coated with a microcrystalline foundation layer. X-ray microanalysis showed that this material was composed of calcium phosphate. Bacterial colonisation of the foundation layer followed and by 18h the catheters were encrusted by densely populated crystalline P. mirabilis biofilms. These observations have important implications for the development of encrustation-resistant catheters. In the case of silver catheters for example, bacterial cells can attach to the crystalline foundation layer and continue to grow, protected from contact with the underlying silver. If antimicrobials are to be incorporated into catheters to prevent encrustation, it is important that they diffuse into the urine and prevent the rise in pH that triggers crystal formation.

Single crystalline hollow metal-organic frameworks: a metal-organic polyhedron single crystal as a sacrificial template.

PubMed

Kim, Hyehyun; Oh, Minhak; Kim, Dongwook; Park, Jeongin; Seong, Junmo; Kwak, Sang Kyu; Lah, Myoung Soo

2015-02-28

Single crystalline hollow metal-organic frameworks (MOFs) with cavity dimensions on the order of several micrometers and hundreds of micrometers were prepared using a metal-organic polyhedron single crystal as a sacrificial hard template. The hollow nature of the MOF crystal was confirmed by scanning electron microscopy of the crystal sliced using a focused ion beam.

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

PubMed Central

Ranjkesh, Amid; Park, Min-Kyu; Park, Do Hyuk; Park, Ji-Sub; Choi, Jun-Chan; Kim, Sung-Hoon; Kim, Hak-Rin

2015-01-01

We propose a highly oriented photochromic dye film for an ultraviolet (UV)-sensing layer, where spirooxazine (SO) derivatives are aligned with the liquid crystalline UV-curable reactive mesogens (RM) using a guest-host effect. For effective electrical UV sensing with a simple metal-insulator-metal structure, our results show that the UV-induced switchable dipole moment amount of the SO derivatives is high; however, their tilting orientation should be controlled. Compared to the dielectric layer with the nearly planar SO dye orientation, the photochromic dielectric layer with the moderately tilted dye orientation shows more than seven times higher the UV-induced capacitance variation. PMID:26729116

Step-by-step fabrication of a highly oriented crystalline three-dimensional pillared-layer-type metal-organic framework thin film confirmed by synchrotron X-ray diffraction.

PubMed

Otsubo, Kazuya; Haraguchi, Tomoyuki; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2012-06-13

Fabrication of a crystalline ordered thin film based on the porous metal-organic frameworks (MOFs) is one of the practical applications of the future functional nanomaterials. Here, we report the creation of a highly oriented three-dimensional (3-D) porous pillared-layer-type MOF thin film on a metal substrate using a step-by-step approach based on liquid-phase epitaxy. Synchrotron X-ray diffraction (XRD) study clearly indicates that the thin film is crystalline and its orientation is highly controlled in both horizontal and vertical directions relative to the substrate. This report provides the first confirmation of details of not only the crystallinity but also the orientation of 3-D MOF thin film using synchrotron XRD. Moreover, we also demonstrate its guest adsorption/desorption behavior by using in situ XRD measurements. The results presented here would promise useful insights for fabrication of MOF-based nanodevices in the future.

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

Real-time monitoring of enzyme activity in a mesoporous silicon double layer

PubMed Central

Orosco, Manuel M.; Pacholski, Claudia; Sailor, Michael J.

2009-01-01

A double layer mesoporous silicon with different pore sizes functions as a nano-reactor that can isolate, filter and quantify the kinetics of enzyme reactions in real-time by optical reflectivity. This tiny reactor may be used to rapidly characterize a variety of isolated enzymes in a label-free manner. Activity of certain protease enzymes is often an indicator of disease states such as cancer1,2, stroke2, and neurodegeneracy3, and thus, there is a need for rapid assays that can characterize the kinetics and substrate specificity of enzymatic reactions. Nanostructured membranes can efficiently separate biomolecules4 but coupling a sensitive detection method remains difficult. Here we report a single mesoporous nano-reactor that can isolate and quantify in real-time the reaction products of proteases. The reactor consists of two layers of porous films electrochemically prepared from crystalline silicon. The upper layer with large pore sizes traps the protease enzymes and acts as the reactor while the lower layer with smaller pore sizes excludes the large proteins and captures the reaction products. Infiltration of the digested fragments into the lower layer produces a measurable change in optical reflectivity and this allows label-free quantification of enzyme kinetics in real-time within a volume of approximately 5 nanoliters. PMID:19350037

Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel

2015-06-30

Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb) 2Te 3 (CBST) films grown on SrTiO 3 (1 1 1) substrates with and without a Te capping layer. We find that bothmore » the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.« less

Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane.

PubMed

Sun, Xiao; Lin, Li; Sun, Luzhao; Zhang, Jincan; Rui, Dingran; Li, Jiayu; Wang, Mingzhan; Tan, Congwei; Kang, Ning; Wei, Di; Xu, H Q; Peng, Hailin; Liu, Zhongfan

2018-01-01

Future applications of graphene rely highly on the production of large-area high-quality graphene, especially large single-crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single-crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low-temperature yet rapid growth of large single-crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 µm min -1 for the growth of sub-centimeter graphene single crystals at temperature about 1000 °C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 °C, lower than the general growth temperature threshold (about 1000 °C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single-crystalline graphene, thus paves the way for graphene in high-end electronical and optoelectronical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vision correction via multi-layer pattern corneal surgery

NASA Astrophysics Data System (ADS)

Sun, Han-Yin; Wang, Hsiang-Chen; Yang, Shun-Fa

2013-07-01

With the rapid development of vision correction techniques, increasing numbers of people have undergone laser vision corrective surgery in recent years. The use of a laser scalpel instead of a traditional surgical knife reduces the size of the wound and quickens recovery after surgery. The primary objective of this article is to examine corneal surgery for vision correction via multi-layer swim-ring-shaped wave circles of the technique through optical simulations with the use of Monte-Carlo ray tracing method. Presbyopia stems from the loss of flexibility of crystalline lens due to aging of the eyeball. Diopter adjustment of a normal crystalline lens could reach 5 D; in the case of presbyopia, the adjustment was approximately 1 D, which made patients unable to see objects clearly in near distance. Corneal laser surgery with multi-layer swim-ring-shaped wave circles was performed, which ablated multiple circles on the cornea to improve flexibility of the crystalline lens. Simulation results showed that the ability of the crystalline lens to adjust increased tremendously from 1 D to 4 D. The method was also used to compare the images displayed on the retina before and after the treatment. The results clearly indicated a significant improvement in presbyopia symptoms with the use of this technique.

Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy

NASA Technical Reports Server (NTRS)

Pandey, Raghvendra K. (Inventor); Raina, Kanwal (Inventor); Solayappan, Narayanan (Inventor)

1994-01-01

A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

Preparation and single molecule structure of electroactive polysilane end-grafted on a crystalline silicon surface

NASA Astrophysics Data System (ADS)

Furukawa, Kazuaki; Ebata, Keisuke

2000-12-01

Electrically active polysilanes of poly(methylphenylsilane) (PMPS) and poly[bis(p-n-butylphenyl)silane] (PBPS), which are, respectively, known as a good hole transporting material and a near-ultraviolet electroluminescent material, are end-grafted directly on a crystalline silicon surface. The single polysilane molecules are clearly distinguished one from the other on the surface by means of atomic force microscopy observations. End-grafted single molecules of PMPS are observed as dots while end-grafted PBPS appear as worms extending for more than 100 nm on the crystalline silicon surface.

Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth.

PubMed

Huang, Xh; Li, Gh; Sun, Gz; Dou, Xc; Li, L; Zheng, Lx

2010-04-17

The initial growth stage of the single-crystalline Sb and Co nanowires with preferential orientation was studied, which were synthesized in porous anodic alumina membranes by the pulsed electrodeposition technique. It was revealed that the initial growth of the nanowires is a three-dimensional nucleation process, and then gradually transforms to two-dimensional growth via progressive nucleation mechanism, which resulting in a structure transition from polycrystalline to single crystalline. The competition among the nuclei inside the nanoscaled-confined channel and the growth kinetics is responsible for the structure transition of the initial grown nanowires.

Three Dimensional Orientation Measurements in Liquid-Crystalline Polymers by FT-IR ATR Dichroism.

DTIC Science & Technology

1987-07-24

dimension on an injection molded liquid crystalline copolyester plaque. This copolymer contains 75% of hydroxybenzoic acid (HBA) and 25% of 2,6...hydroxynaphthoic acid (HNA). Orientation functions were estimated averaging about a 10 u thick layer as a function of the location from the gate as well as the...molecular orientation in three dimension on an injection molded liquid crystalline copolyester plaque. This copolymer contains 75% of hydroxybenzoic acid

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 °C greater than that of the Ta67N33 diffusion barriers. Moreover, multilayered films, formed by alternately stacking the Ta67N33 and Ta64N36 layers with an optimized bilayer thickness (λ) of 10 nm, can dramatically reduce the intrinsic compressive stress to only 0.7 GPa and undergo high-temperature annealing without crystallization. Therefore, the Ta67N33/Ta64N36 multilayered films exhibit a much better barrier performance than the highly crystallization-resistant Ta64N36 single-layered films.

TiS2 and ZrS2 single- and double-wall nanotubes: first-principles study.

PubMed

Bandura, Andrei V; Evarestov, Robert A

2014-02-15

Hybrid density functional theory has been applied for investigations of the electronic and atomic structure of bulk phases, nanolayers, and nanotubes based on titanium and zirconium disulfides. Calculations have been performed on the basis of the localized atomic functions by means of the CRYSTAL-2009 computer code. The full optimization of all atomic positions in the regarded systems has been made to study the atomic relaxation and to determine the most favorable structures. The different layered and isotropic bulk phases have been considered as the possible precursors of the nanotubes. Calculations on single-walled TiS2 and ZrS2 nanotubes confirmed that the nanotubes obtained by rolling up the hexagonal crystalline layers with octahedral 1T morphology are the most stable. The strain energy of TiS2 and ZrS2 nanotubes is small, does not depend on the tube chirality, and approximately obeys to D(-2) law (D is nanotube diameter) of the classical elasticity theory. It is greater than the strain energy of the similar TiO2 and ZrO2 nanotubes; however, the formation energy of the disulfide nanotubes is considerably less than the formation energy of the dioxide nanotubes. The distance and interaction energy between the single-wall components of the double-wall nanotubes is proved to be close to the distance and interaction energy between layers in the layered crystals. Analysis of the relaxed nanotube shape using radial coordinate of the metal atoms demonstrates a small but noticeable deviation from completely cylindrical cross-section of the external walls in the armchair-like double-wall nanotubes. Copyright © 2013 Wiley Periodicals, Inc.

In situ differential reflectance spectroscopy of thin crystalline films of PTCDA on different substrates

NASA Astrophysics Data System (ADS)

Proehl, Holger; Nitsche, Robert; Dienel, Thomas; Leo, Karl; Fritz, Torsten

2005-04-01

We report an investigation of the excitonic properties of thin crystalline films of the archetypal organic semiconductor PTCDA (3,4,9,10-perylenetetracarboxylic dianhydride) grown on poly- and single crystalline surfaces. A sensitive setup capable of measuring the optical properties of ultrathin organic molecular crystals via differential reflectance spectroscopy (DRS) is presented. This tool allows to carry out measurements in situ, i.e., during the actual film growth, and over a wide spectral range, even on single crystalline surfaces with high symmetry or metallic surfaces, where widely used techniques like reflection anisotropy spectroscopy (RAS) or fluorescence excitation spectroscopy fail. The spectra obtained by DRS resemble mainly the absorption of the films if transparent substrates are used, which simplifies the analysis. In the case of mono- to multilayer films of PTCDA on single crystalline muscovite mica(0001) and Au(111) substrates, the formation of the solid state absorption from monomer to dimer and further to crystal-like absorption spectra can be monitored.

Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

NASA Astrophysics Data System (ADS)

Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

2017-01-01

This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

Orientation-dependent hydration structures at yttria-stabilized cubic zirconia surfaces

DOE PAGES

Hou, Binyang; Kim, Seunghyun; Kim, Taeho; ...

2016-11-30

Water interaction with surfaces is very important and plays key roles in many natural and technological processes. Because the experimental challenges that arise when studying the interaction water with specific crystalline surfaces, most studies on metal oxides have focused on powder samples, which averaged the interaction over different crystalline surfaces. As a result, studies on the crystal orientation-dependent interaction of water with metal oxides are rarely available in the literature. In this work, water adsorption at 8 mol % yttria-stabilized cubic single crystal zirconia (100) and (111) surfaces was studied in terms of interfacial hydration structures using high resolution X-raymore » reflectivity measurements. The interfacial electron density profiles derived from the structure factor analysis of the measured data show the existence of multiple layers of adsorbed water with additional peculiar metal adsorption near the oxide surfaces.Surface relaxation, depletion, and interaction between the adsorbed layers and bulk water are found to vary greatly between the two surfaces and are also different when compared to the previously studied (110) surface. The fractional ratio between chemisorbed and physisorbed water species were also quantitatively estimated, which turned out to vary dramatically from surface to surface. Finally, the result gives us a unique opportunity to reconsider the simplified 2:1 relation between chemisorption and physisorption, originally proposed by Morimoto et al. based on the adsorption isotherms of water on powder metal oxide samples.« less

Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivadasan, A. K., E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in; Dhara, Sandip, E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in; Mangamma, G., E-mail: sivankondazhy@gmail.com, E-mail: gm@igcar.gov.in, E-mail: dhara@igcar.gov.in

2016-05-07

Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formationmore » of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.« less

Theoretical study on electronic structure of bathocuproine: Renormalization of the band gap in the crystalline state and the large exciton binding energy

NASA Astrophysics Data System (ADS)

Yanagisawa, Susumu; Hatada, Shin-No-Suke; Morikawa, Yoshitada

Bathocuproine (BCP) is a promising organic material of a hole blocking layer in organic light-emitting diodes or an electron buffer layer in organic photovoltaic cells. The nature of the unoccupied electronic states is a key characteristic of the material, which play vital roles in the electron transport. To elucidate the electronic properties of the molecular or crystalline BCP, we use the GW approximation for calculation of the fundamental gap, and the long-range corrected density functional theory for the molecular optical absorption. It is found that the band gap of the BCP single crystal is 4.39 eV, and it is in agreement with the recent low-energy inverse photoemission spectroscopy measurement. The polarization energy is estimated to be larger than 1 eV, demonstrating the large polarization effects induced by the electronic clouds surrounding the injected charge. The theoretical optical absorption energy is 3.68 eV, and the exciton binding energy is estimated to be 0.71 eV, implying the large binding in the eletron-hole pair distributed around the small part of the molecular region. This work was supported by the Grants-in-Aid for Young Scientists (B) (No. 26810009), and for Scientific Research on Innovative Areas ``3D Active-Site Science'' (No. 26105011) from Japan Society for the Promotion of Science.

A Novel Acousto-Electric Levitator for Studies of Drop and Particle Clusters and Arrays

NASA Technical Reports Server (NTRS)

Tian, Yuren; Apfel, Robert E.; Zheng, Yibing

1999-01-01

A novel and compact instrumentation for studying the behavior of drop sprays and of clusters of drops now permits fundamental research into the behavior of reacting and non-reacting fluid and solid species. The new capability is made possible by simultaneous acousto-electric levitation and charging of "seed" droplets (10-30 microns in diameter) which come together in 2-D clusters (with up to 300 droplets). These clusters are interesting in their own right because of their crystalline and quasi-crystalline forms, which depend on the acoustic and electric field parameters. By varying the electric and acoustic field intensities, one can cause a cluster of droplets to condense into larger drops (e.g. 50-300 microns) which, because of their charge, form uniformly spaced 2-D arrays of monodispersed drops (e.g. 30-40 array drops in preliminary experiments). One or more layers of these 2-D arrays can form in the acoustic standing wave. Such a configuration permits a wide range of fundamental studies of drop evaporation, combustion, and nucleation. The drops can be single or multicomponent. Therefore, fundamental materials studies can also be performed. Using this same Cluster and Array Generation (CAG) instrumentation, it has been also possible in preliminary experiments to demonstrate the clustering and arraying of solid particles, both coated with an electrically conducting layer and uncoated, and both charged and uncharged.

A facile way to control phase of tin selenide flakes by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wang, Zhigang; Pang, Fei

2018-06-01

Although two-dimensional (2D) tin selenides are attracting intense attentions, studies on its phase transition are still relatively few. Here we report a facile way to control the phase growth of tin selenide flakes on mica and SiO2/Si by only adjusting nominal Sn:Se ratio, which refers to the amount of loaded SnO2 and Se precursors. High normal Sn:Se ratio induced SnSe flakes, conversely SnSe2 flakes formed. It could be used as a practical guide to selectively synthesize pure phase of single crystalline 2D layered chalcogenide materials similar to tin selenides.

Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya

2014-06-16

Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10 nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050 °C was 0.83 cm{sup 2}/V s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

Thickness determination of biological samples with a zeta-calibrated scanning tunneling microscope.

PubMed Central

Wang, Z H; Hartmann, T; Baumeister, W; Guckenberger, R

1990-01-01

A single-tube scanning tunneling microscope has been zeta-calibrated by using atomic steps of crystalline gold and was used for measuring the thickness of two biological samples, metal-coated as well as uncoated. The hexagonal surface layer of the bacterium Deinococcus radiodurans with an open network-type structure shows thickness values that are strongly influenced by the substrate and the preparation method. In contrast, the thickness of the purple membrane of Halobacterium halobium with its densely packed less-corrugated structure exhibits very little variation in thickness in coated preparations and the values obtained are in good agreement with x-ray data. Images PMID:2251276

Molecular characterization of organic electronic films.

PubMed

DeLongchamp, Dean M; Kline, R Joseph; Fischer, Daniel A; Richter, Lee J; Toney, Michael F

2011-01-18

Organic electronics have emerged as a viable competitor to amorphous silicon for the active layer in low-cost electronics. The critical performance of organic electronic materials is closely related to their morphology and molecular packing. Unlike their inorganic counterparts, polymers combine complex repeat unit structure and crystalline disorder. This combination prevents any single technique from being able to uniquely solve the packing arrangement of the molecules. Here, a general methodology for combining multiple, complementary techniques that provide accurate unit cell dimensions and molecular orientation is described. The combination of measurements results in a nearly complete picture of the organic film morphology. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultimately short ballistic vertical graphene Josephson junctions

PubMed Central

Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

2015-01-01

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

Multilayer coating of optical substrates by ion beam sputtering

NASA Astrophysics Data System (ADS)

Daniel, M. V.; Demmler, M.

2017-10-01

Ion beam sputtering is well established in research and industry, despite its relatively low deposition rates compared to electron beam evaporation. Typical applications are coatings of precision optics, like filters, mirrors and beam splitter. Anti-reflective or high-reflective multilayer stacks benefit from the high mobility of the sputtered particles on the substrate surface and the good mechanical characteristics of the layers. This work gives the basic route from single layer optimization of reactive ion beam sputtered Ta2O5 and SiO2 thin films towards complex multilayer stacks for high-reflective mirrors and anti-reflective coatings. Therefore films were deposited using different oxygen flow into the deposition chamber Afterwards, mechanical (density, stress, surface morphology, crystalline phases) and optical properties (reflectivity, absorption and refractive index) were characterized. These knowledge was used to deposit a multilayer coating for a high reflective mirror.

Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm(2).

PubMed

Werner, Jérémie; Weng, Ching-Hsun; Walter, Arnaud; Fesquet, Luc; Seif, Johannes Peter; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

2016-01-07

Monolithic perovskite/crystalline silicon tandem solar cells hold great promise for further performance improvement of well-established silicon photovoltaics; however, monolithic tandem integration is challenging, evidenced by the modest performances and small-area devices reported so far. Here we present first a low-temperature process for semitransparent perovskite solar cells, yielding efficiencies of up to 14.5%. Then, we implement this process to fabricate monolithic perovskite/silicon heterojunction tandem solar cells yielding efficiencies of up to 21.2 and 19.2% for cell areas of 0.17 and 1.22 cm(2), respectively. Both efficiencies are well above those of the involved subcells. These single-junction perovskite and tandem solar cells are hysteresis-free and demonstrate steady performance under maximum power point tracking for several minutes. Finally, we present the effects of varying the intermediate recombination layer and hole transport layer thicknesses on tandem cell photocurrent generation, experimentally and by transfer matrix simulations.

Porous silicon-based direct hydrogen sulphide fuel cells.

PubMed

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Growth and Brilliant Photo-Emission of Crystalline Hexagonal Column of Alq3 Microwires

PubMed Central

Kim, Seokho; Kim, Do Hyoung; Choi, Jinho; Lee, Hojin; Kim, Sun-Young; Park, Jung Woon; Park, Dong Hyuk

2018-01-01

We report the growth and nanoscale luminescence characteristics of 8-hydroxyquinolinato aluminum (Alq3) with a crystalline hexagonal column morphology. Pristine Alq3 nanoparticles (NPs) were prepared using a conventional reprecipitation method. Crystal hexagonal columns of Alq3 were grown by using a surfactant-assisted self-assembly technique as an adjunct to the aforementioned reprecipitation method. The formation and structural properties of the crystalline and non-crystalline Alq3 NPs were analyzed with scanning electron microscopy and X-ray diffraction. The nanoscale photoluminescence (PL) characteristics and the luminescence color of the Alq3 single NPs and their crystal microwires (MWs) were evaluated from color charge-coupled device images acquired using a high-resolution laser confocal microscope. In comparison with the Alq3 NPs, the crystalline MWs exhibited a very bright and sharp emission. This enhanced and sharp emission from the crystalline Alq3 single MWs originated from effective π-π stacking of the Alq3 molecules due to strong interactions in the crystalline structure. PMID:29565306

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

Low temperature thermoelectric properties of p-type doped single-crystalline SnSe

NASA Astrophysics Data System (ADS)

Wang, Si; Hui, Si; Peng, Kunling; Bailey, Trevor P.; Liu, Wei; Yan, Yonggao; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

2018-04-01

SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, our study implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.

Thin film growth of the 2122-phase of BCSCO superconductor with high degree of crystalline perfection

NASA Technical Reports Server (NTRS)

Raina, K. K.; Narayanan, S.; Pandey, R. K.

1992-01-01

Thin films of the 80 K-phase of BiCaSrCu-oxide superconductor having the composition of Bi2Ca1.05Sr2.1Cu2.19O(x) and high degree of crystalline perfection have been grown on c-axis oriented twin free single crystal substrates of NdGaO3. This has been achieved by carefully establishing the growth conditions of the LPE experiments. The temperature regime of 850 to 830 C and quenching of the specimens on the termination of the growth period are found to be pertinent for the growth of quasi-single crystalline superconducting BCSCO films on NdGaO3 substrates. The TEM analysis reveals a single crystalline nature of these films which exhibit 100 percent reflectivity in infrared regions at liquid nitrogen temperature.

Synthesis of Large-grain, Single-crystalline Monolayer and AB-stacking Bilayer Graphene

NASA Astrophysics Data System (ADS)

Zhang, Luyao; Lin, Yung-Chen; Zhang, Yi; Chang, Han-Wen; Yeh, Wen-Cheng; Zhou, Chongwu; USC Nanotechnology Research Laboratory Team

2013-03-01

We report the growth of large-grain, single-crystalline monolayer and AB-stacking bilayer graphene by the combination of ambient pressure chemical vapor deposition and low pressure chemical vapor deposition. The shape of the monolayer graphene was modified to be either hexagons or flowers under different growth conditions. The size of the bilayer graphene region was enlarged under ambient pressure growth conditions with low methane concentration. Raman spectra and selected area electron diffraction of individual graphene grain indicated that the each graphene grain is single-crystalline. With electron beam lithography patterned PMMA seeds, graphene nucleation can be controlled and graphene monolayer and bilayer arrays were synthesized on copper foil. Electron backscatter diffraction study revealed that the graphene morphology had little correlation with the crystalline orientation of underlying copper substrate. Mork Family Department of Chemical Engineering and Materials Science

Generation and the role of dislocations in single-crystalline phase-change In 2 Se 3 nanowires under electrical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mafi, Elham; Tao, Xin; Zhu, Wenguang

2016-07-08

Using single crystalline In2Se3 nanowires as a platform, we have studied the RESET switching (from low to high electrical resistance) in this phase-change material under electric pulses. Particularly, we correlated the atomic-scale structural evolutions with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with density functional theory calculations, we show that the immobile dislocations generated via vacancy condensations are responsible for the RESET switching and that the material maintains the single crystallinity during the process. This new mechanism is fundamentally different from the crystalline-amorphous transition,more » which is commonly understood as the underlying process for the RESET switching in similar phase-change materials.« less

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

PubMed

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Surface roughness in XeF{sub 2} etching of a-Si/c-Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevens, A.A.E.; Beijerinck, H.C.W.

2005-01-01

Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a {approx}12 nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF{sub 2} flux, we observe a similar evolution of the surface roughness as a function of the XeF{sub 2} dose proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}0.2. In the transition region from the pure amorphous to themore » pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 {sigma}, with {sigma} the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of {sigma} which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.« less

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Hollow nanoparticle cathode materials for sodium electrochemical cells and batteries

DOEpatents

Shevchenko, Elena; Rajh, Tijana; Johnson, Christopher S.; Koo, Bonil

2016-07-12

A cathode comprises, in its discharged state, a layer of hollow .gamma.-Fe.sub.2O.sub.3 nanoparticles disposed between two layers of carbon nanotubes, and preferably including a metallic current collector in contact with one of the layers of carbon nanotubes. Individual particles of the hollow .gamma.-Fe.sub.2O.sub.3 nanoparticles comprise a crystalline shell of .gamma.-Fe.sub.2O.sub.3 including cation vacancies within the crystal structure of the shell (i.e., iron vacancies of anywhere between 3% to 90%, and preferably 44 to 77% of available octahedral iron sites). Sodium ions are intercalated within at least some of the cation vacancies within the crystalline shell of the hollow .gamma.-Fe.sub.2O.sub.3 nanoparticles.

Photoluminescence spectral reliance on aggregation order of 1,1-Bis(2'-thienyl)-2,3,4,5-tetraphenylsilole.

PubMed

Chen, Junwu; Xu, Bin; Yang, Kaixia; Cao, Yong; Sung, Herman H Y; Williams, Ian D; Tang, Ben Zhong

2005-09-15

1,1-Bis(2'-thienyl)-2,3,4,5-tetraphenylsilole (1) was prepared and characterized crystallographically. Silole 1 exhibited aggregation-induced emission (AIE) behavior like other 2,3,4,5-tetraphenylsiloles. Unexpectedly, aggregates formed in water/acetone (6:4 by volume) mixture emitted a blue light that peaked at 474 nm, while aggregates formed in the mixtures with higher water fractions emitted green light that peaked at 500 nm. Transmission electron microscopy demonstrated that the aggregates formed in the mixture with water fraction of 60% were single crystals, while aggregates that formed in the mixture with water fraction of 90% were irregular and poorly ordered particles. The unusual PL spectral reliance on aggregation order was further confirmed by PL emissions of macroscopic crystal powders and amorphous powders of the silole in the dry state. PL spectral blue shifting was observed upon aging of the poorly ordered aggregates formed in mixtures with water fractions of 70-90%, and they finally exhibited the same blue emission as the crystalline aggregates. The as-deposited thin solid film was amorphous and it could be transformed to a transparent crystalline film upon treatment in the vapor of an ethanol/water (1:1 by volume) mixture, along with PL spectral blue shifting due to changing of aggregation order. It was also found that the crystalline film showed a blue-shifted absorption spectrum relative to the amorphous film and the shift of the absorption edge of the spectra could match that of corresponding PL spectra. The FT-IR spectrum of crystal powders of 1 displayed more vibration modes compared with that of amorphous powders, suggesting the existence of different pi-overlaps or different molecular conformations. The crystals of 1-methyl-1,2,3,4,5-pentaphenylsilole and hexaphenylsilole also showed blue-shifted PL emissions of their amorphous solids, with a comparable PL spectral shift of 1. Developing of a silole solution on a TLC plate readily brought about an amorphous thin layer. Our results suggest that crystalline films of AIE-active siloles are potential emissive layers for efficient blue OLEDs with stable color and long lifetime.

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

NASA Astrophysics Data System (ADS)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

NASA Astrophysics Data System (ADS)

Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

2018-03-01

We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

Effect of nickel seed layer on growth of α-V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha; Reddy, G. B.

2015-08-01

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V2O5) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ˜ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V2O5 film deposited on both substrates are carried out by SEM, revealed that features of V2O5 NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

PubMed

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

NASA Astrophysics Data System (ADS)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-01

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ˜3 nm . Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Microstructures of GaN1-xPx layers grown on (0001) GaN substrates by gas source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Seong, Tae-Yeon; Bae, In-Tae; Choi, Chel-Jong; Noh, D. Y.; Zhao, Y.; Tu, C. W.

1999-03-01

Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001) GaN/sapphire at temperatures (Tg) in the range 500-760 °C. TEM, TED, and XRD results indicate that the samples grown at Tg⩽600 °C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg⩾730 °C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500 °C layer, the two phases are randomly oriented and distributed, whereas the 600 °C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg⩾730 °C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.

Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Jinno, Daiki; Otsuki, Shunya; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2018-02-01

To reduce the number of threading dislocations (TDs) in nonpolar a-plane GaN (a-GaN) epi-layers grown on flat r-plane sapphire substrates (r-FSS), we investigated the effects on the crystalline quality of the a-GaN epi-layers of high-density patterned r-plane sapphire substrates (r-HPSS), the patterns of which were placed at intervals of several hundred nanometers. Two types of r-HPSS, the patterns of which had diameters and heights on the order of several hundred nanometers (r-NHPSS) or several micrometers (r-MHPSS), were prepared with conventional r-FSS. The effect of these r-HPSS on the a-GaN epi-layers was demonstrated by evaluating the surface morphology and the crystalline quality of the epi-layers. The surfaces of the a-GaN epi-layer grown on r-FSS and r-NHPSS were pit-free and mirror-like, whereas the surface of the a-GaN epi-layer grown on r-MHPSS was very rough due to the large, irregular GaN islands that grew on the patterns, mainly at the initial growth stage. The crystalline quality of the a-GaN epi-layer grown on r-NHPSS was better than that of the a-GaN epi-layer grown on r-FSS. We confirmed that there were fewer TDs in the a-GaN epi-layer grown on r-NHPSS than there were in the a-GaN epi-layer grown on r-FSS. The TDs propagating to the surface in a-GaN epi-layer grown on r-NHPSS were mainly generated on the flat sapphire regions between the patterns. Interestingly, it was also found that the TDs that propagated to the surface concentrated with a periodic pitch along the c-axis direction. The TD densities of a-GaN epi-layers grown on r-FSS and r-NHPSS were estimated to be approximately 5.0 × 1010 and 1.5 × 109 cm-2, respectively. This knowledge will contribute to the further development of a-GaN epi-layers for high-performance devices.

Structure and Dynamics of Freely Suspended Liquid Crystals

NASA Technical Reports Server (NTRS)

Clark, Noel A.

2004-01-01

Smectic liquid crystals are phases of rod shaped molecules organized into one dimensionally (1 D) periodic arrays of layers, each layer being between one and two molecular lengths thick. In the least ordered smectic phases, the smectics A and C, each layer is a two dimensional (2D) liquid. Additionally there are a variety of more ordered smectic phases having hexatic short range translational order or 2D crystalline or quasi long range translational order within the layers. The inherent fluid-layer structure and low vapor pressure of smectic liquid crystals enables the long term stabilization of freely suspended, single component, layered fluid films as thin as 30A, a single molecular layer. The layering forces the films to be an integral number of smectic layers thick, quantizing their thickness in layer units and forcing a film of a particular number of layers to be physically homogeneous with respect to its layer structure over its entire area. Optical reflectivity enables the precise determination of the number of layers. These ultrathin freely suspended liquid crystal films are structures of fundamental interest in condensed matter and fluid physics. They are the thinnest known stable fluid structures and have the largest surface-to-volume ratio of any stable fluid preparation, making them ideal for the study of the effects of reduced dimensionality on phase behavior and on fluctuation and interface phenomena. Their low vapor pressure and quantized thickness enable the effective use of microgravity to extend the study of basic capillary phenomena to ultrathin fluid films. Freely suspended films have been a wellspring of new LC physics. They have been used to provide unique experimental conditions for the study of condensed phase transitions in two dimensions. They are the only system in which the hexatic has been unambiguously identified as a phase of matter, and the only physical system in which fluctuations of a 2D XY system and Kosterlitz Thouless phase transition has been observed and 2D XY quasi long range order verified. Smectic films have enabled the precise determination of smectic layer electron density and positional fluctuation profiles and have been used to show that the interlayer interactions in antiferroelectric tilted smectics do not extend significantly beyond nearest neighbors. Freely suspended films played a pivotal role in the recent discovery of macroscopic chiral-polar ordering in fluids of achiral molecules. The interactions which are operative in liquid crystals are generally weak in comparison to those in crystalline phases, leading to the facile manipulation of the order in liquid crystals by external agents such as applied fields and surfaces. Effects arising from weak ordering are significantly enhanced in ultrathin free films and filaments, in which the intermolecular coupling is effectively further reduced by loss of neighbors. Over the past four years this research, which we now detail, has produced a host of exciting new discoveries and unexpected results, maintaining the study of freely suspended liquid crystal structures as one of most exciting and fruitful areas of complex fluid physics. In addition, a class of experiments on the behavior of 1D interfaces in 2D films have been pursued with results that point to potentially quite interesting effects in microgravity.

Solar cells

DOEpatents

Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

2013-06-18

Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

The growth process of first water layer and crystalline ice on the Rh(111) surface

NASA Astrophysics Data System (ADS)

Beniya, Atsushi; Sakaguchi, Yuji; Narushima, Tetsuya; Mukai, Kozo; Yamashita, Yoshiyuki; Yoshimoto, Shinya; Yoshinobu, Jun

2009-01-01

The adsorption states and growth process of the first layer and multilayer of water (D2O) on Rh(111) above 135K were investigated using infrared reflection absorption spectroscopy (IRAS), temperature programed desorption, spot-profile-analysis low-energy electron diffraction, and scanning tunneling microscopy (STM). At the initial stage, water molecules form commensurate (√3×√3)R30° islands, whose size is limited for several hexagonal units; the average diameter is ˜2.5nm. This two-dimensional (2D) island includes D-down species, and free OD species exist at the island edge. With increasing coverage, the D-up species starts to appear in IRAS. At higher coverages, the 2D islands are connected in STM images. By the titration of Xe adsorption we estimated that the D-down domain occupies about 55% on Rh(111) at the saturation coverage. Further adsorption of water molecules forms three-dimensional ice crystallites on the first water layer; thus, the growth mode of crystalline water layers on Rh(111) is a Stranski-Krastanov type. We have found that an ice crystallite starts to grow on D-down domains and the D-down species do not reorient upon the formation of a crystalline ice.

Extremely enhanced photovoltaic properties of dye-sensitized solar cells by sintering mesoporous TiO2 photoanodes with crystalline titania chelated by acetic acid

NASA Astrophysics Data System (ADS)

Liu, Bo-Tau; Chou, Ya-Hui; Liu, Jin-Yan

2016-04-01

The study presents a significant improvement on the performance of dye-sensitized solar cells (DSSCs) through incorporating the crystalline titania chelated by acetic acid (TAc) into the mesoporous TiO2 photoanodes. The effects of TAc on the blocking layer, mesoporous TiO2 layer, and post-treatment have been investigated. The TAc blocking layer displays compact construction, revealing superior response time and resistance to suppress dark current compared to the blocking layer made from titanium(IV) isopropoxide (TTIP). The power conversion efficiency of DSSCs with the TAc treatment can reach as high as 10.49%, which is much higher than that of pristine DSSCs (5.67%) and that of DSSCs treated by TTIP (7.86%). We find that the TAc incorporation can lead to the decrease of charge transfer resistance and the increase of dye adsorption. The result may be attributed to the fact that the TAc possesses high crystallinity, exposed (101) planes, and acid groups chelated on surface, which are favorable for dye attachment and strong bonding at the FTO/TiO2 and the TiO2/TiO2 interfaces, These improvements result in the remarkable increase of photocurrent and thereby that of power conversion efficiency.

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Metalorganic deposition method for forming epitaxial thallium-based copper oxide superconducting films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsen, W.L.; Eddy, M.M.; Hammond, R.B.

1991-12-10

This patent describes a method for producing a superconducting article comprising an oriented metal oxide superconducting layer containing thallium, optionally calcium, barium and copper, the layer being at least 30 {Angstrom} and having a c-axis oriented normal to a crystalline substrate surface. It comprises coating the crystalline substrate surface with a solution of thallium, optionally calcium, barium and copper carboxylate soaps dispersed in a medium of hydrocarbons of halohydrocarbons with a stoichiometric metal ratio to form the oxide superconducting layer, prepyrolyzing the soaps coated on the substrate at a temperature of 350{degrees} C. or less in an oxygen containing atmosphere,more » and pyrolyzing the soaps at a temperature in the range of 800{degrees} - 900{degrees} C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce the superconducting layer on the substrate, wherein usable portions of the superconducting layer are epitaxial to the substrate.« less

Optimisation of readout performance of phase-change probe memory in terms of capping layer and probe tip

NASA Astrophysics Data System (ADS)

Wang, Lei; Wright, C. David; Aziz, Mustafa. M.; Yang, Ci Hui; Yang, Guo Wei

2014-11-01

The capping layer and the probe tip that serve as the protective layer and the recording tool, respectively, for phase-change probe memory play an important role on the writing performance of phase-change probe memory, thus receiving considerable attention. On the other hand, their influence on the readout performance of phasechange probe memory has rarely been reported before. A three-dimensional parametric study based on the Laplace equation was therefore conducted to investigate the effect of the capping layer and the probe tip on the resulting reading contrast for the two cases of reading a crystalline bit from an amorphous matrix and reading an amorphous bit from a crystalline matrix. The results indicated that a capping layer with a thickness of 2 nm and an electrical conductivity of 50 Ω-1m-1 is able to provide an appropriate reading contrast for both the cases, while satisfying the previous writing requirement, particularly with the assistance of a platinum silicide probe tip.

Laser writing of single-crystalline gold substrates for surface enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

2017-07-01

Surface enhanced Raman scattering (SERS) spectroscopy, a powerful contemporary tool for studying low-concentration analytes via surface plasmon induced enhancement of local electric field, is of utility in biochemistry, material science, threat detection, and environmental studies. We have developed a simple, fast, scalable, and relatively low-cost optical method of fabricating and characterizing large-area, reusable and broadband SERS substrates with long storage lifetime. We use tightly focused, intense infra-red laser pulses to write gratings on single-crystalline, Au (1 1 1) gold films on mica which act as SERS substrates. Our single-crystalline SERS substrates compare favourably, in terms of surface quality and roughness, to those fabricated in poly-crystalline Au films. Tests show that our SERS substrates have the potential of detecting urea and 1,10-phenantroline adulterants in milk and water, respectively, at 0.01 ppm (or lower) concentrations.

Novel Insights into the Proteus mirabilis Crystalline Biofilm Using Real-Time Imaging

PubMed Central

Wilks, Sandra A.; Fader, Mandy J.; Keevil, C. William

2015-01-01

The long-term use of indwelling catheters results in a high risk from urinary tract infections (UTI) and blockage. Blockages often occur from crystalline deposits, formed as the pH rises due to the action of urease-producing bacteria; the most commonly found species being Proteus mirabilis. These crystalline biofilms have been found to develop on all catheter materials with P. mirabilis attaching to all surfaces and forming encrustations. Previous studies have mainly relied on electron microscopy to describe this process but there remains a lack of understanding into the stages of biofilm formation. Using an advanced light microscopy technique, episcopic differential interference contrast (EDIC) microscopy combined with epifluorescence (EF), we describe a non-destructive, non-contact, real-time imaging method used to track all stages of biofilm development from initial single cell attachment to complex crystalline biofilm formation. Using a simple six-well plate system, attachment of P. mirabilis (in artificial urine) to sections of silicone and hydrogel latex catheters was tracked over time (up to 24 days). Using EDIC and EF we show how initial attachment occurred in less than 1 h following exposure to P. mirabilis. This was rapidly followed by an accumulation of an additional material (indicated to be carbohydrate based using lectin staining) and the presence of highly elongated, motile cells. After 24 h exposure, a layer developed above this conditioning film and within 4 days the entire surface (of both catheter materials) was covered with diffuse crystalline deposits with defined crystals embedded. Using three-dimensional image reconstruction software, cells of P. mirabilis were seen covering the crystal surfaces. EDIC microscopy could resolve these four components of the complex crystalline biofilm and the close relationship between P. mirabilis and the crystals. This real-time imaging technique permits study of this complex biofilm development with no risk of artefacts due to sample manipulation. A full understanding of the stages and components involved in crystalline encrustation formation will aid in the development of new protocols to manage and ultimately prevent catheter blockage. PMID:26516766

Novel Insights into the Proteus mirabilis Crystalline Biofilm Using Real-Time Imaging.

PubMed

Wilks, Sandra A; Fader, Mandy J; Keevil, C William

2015-01-01

The long-term use of indwelling catheters results in a high risk from urinary tract infections (UTI) and blockage. Blockages often occur from crystalline deposits, formed as the pH rises due to the action of urease-producing bacteria; the most commonly found species being Proteus mirabilis. These crystalline biofilms have been found to develop on all catheter materials with P. mirabilis attaching to all surfaces and forming encrustations. Previous studies have mainly relied on electron microscopy to describe this process but there remains a lack of understanding into the stages of biofilm formation. Using an advanced light microscopy technique, episcopic differential interference contrast (EDIC) microscopy combined with epifluorescence (EF), we describe a non-destructive, non-contact, real-time imaging method used to track all stages of biofilm development from initial single cell attachment to complex crystalline biofilm formation. Using a simple six-well plate system, attachment of P. mirabilis (in artificial urine) to sections of silicone and hydrogel latex catheters was tracked over time (up to 24 days). Using EDIC and EF we show how initial attachment occurred in less than 1 h following exposure to P. mirabilis. This was rapidly followed by an accumulation of an additional material (indicated to be carbohydrate based using lectin staining) and the presence of highly elongated, motile cells. After 24 h exposure, a layer developed above this conditioning film and within 4 days the entire surface (of both catheter materials) was covered with diffuse crystalline deposits with defined crystals embedded. Using three-dimensional image reconstruction software, cells of P. mirabilis were seen covering the crystal surfaces. EDIC microscopy could resolve these four components of the complex crystalline biofilm and the close relationship between P. mirabilis and the crystals. This real-time imaging technique permits study of this complex biofilm development with no risk of artefacts due to sample manipulation. A full understanding of the stages and components involved in crystalline encrustation formation will aid in the development of new protocols to manage and ultimately prevent catheter blockage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strelcov, Evgheni; Cothren, Joshua E.; Leonard, Donovan N.

Progress in rational engineering of Li-ion batteries requires better understanding of the electrochemical processes and accompanying transformations in the electrode materials on multiple length scales. In spite of recent progress in utilizing transmission electron microscopy (TEM) to analyze these materials, in situ scanning electron microscopy (SEM) was mostly overlooked as a powerful tool that allows probing these phenomena on the nano and mesoscale. In this paper, we report on in situ SEM study of lithiation in a V 2O 5-based single-nanobelt battery with ionic liquid electrolyte. Coupled with cyclic voltammetry measurements, in situ SEM revealed the peculiarities of subsurface intercalation,more » formation of solid-electrolyte interface (SEI) and electromigration of liquid. We observed that single-crystalline vanadia nanobelts do not undergo large-scale amorphization or fracture during electrochemical cycling, but rather transform topochemically with only a slight shape distortion. Lastly, the SEI layer seems to have significant influence on the lithium ion diffusion and overall capacity of the single-nanobelt battery.« less

Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation

NASA Astrophysics Data System (ADS)

Bragaglia, V.; Schnegg, A.; Calarco, R.; Holldack, K.

2016-10-01

A THz-probe spectroscopy scheme with laser-induced single cycle pulses of coherent synchrotron radiation is devised and adapted to reveal the dynamic THz transmittance response in epitaxially grown phase change materials upon 800 nm fs-laser excitation. Amorphous (a-) and crystalline (c-) films of the prototypical Ge2Sb2Te5 (GST) alloy are probed with single cycle THz pulses tuned to the spectral range of the highest absorption contrast at 2 THz. After an initial instantaneous sub-picosecond (ps) dynamic THz transmittance drop, the response of a-GST in that range is dominated only by a short recovery time τshort = 2 ps of the excited carriers. On the contrary, the behavior of the c-GST response displays a short decay of 0.85 ps followed by a long one τlong = 90 ps, suggesting that vacancy layers in an ordered c-GST play a role as dissipation channel for photo-induced free carriers.

Surface Polarity and Self-Structured Nanogrooves Collaboratively Oriented Molecular Packing for High Crystallinity toward Efficient Charge Transport.

PubMed

Ji, Deyang; Xu, Xiaomin; Jiang, Longfeng; Amirjalayer, Saeed; Jiang, Lang; Zhen, Yonggang; Zou, Ye; Yao, Yifan; Dong, Huanli; Yu, Junsheng; Fuchs, Harald; Hu, Wenping

2017-02-22

Efficient charge transport in organic semiconductors is essential for construction of high performance optoelectronic devices. Herein, for the first time, we demonstrate that poly(amic acid) (PAA), a facilely deposited and annealing-free dielectric layer, can tailor the growth of organic semiconductor films with large area and high crystallinity toward efficient charge transport and high mobility in their thin film transistors. Pentacene is used as a model system to demonstrate the concept with mobility up to 30.6 cm 2 V -1 s -1 , comparable to its high quality single crystal devices. The structure of PAA has corrugations with OH groups pointing out of the surface, and the presence of an amide bond further allows adjacent polymer strands to interact via hydrogen bonding, leading to a self-rippled surface perpendicular to the corrugation. On the other hand, the strong polar groups (-COOH/-CONH) of PAA could provide repulsive forces between PAA and pentacene, which results in the vertical orientation of pentacene on the dielectric surface. Indeed, in comparison with its imidized counterpart polyimide (PI), PAA dielectric significantly enhances the film crystallinity, drastically increases the domain size, and decreases the interface trap density, giving rise to superior device performance with high mobility. This concept can be extended to more organic semiconducting systems, e.g., 2,6-diphenylanthracene (DPA), tetracene, copper phthalocyanine (CuPc), and copper hexadecafluorophthalocyanine (F 16 CuPc), demonstrating the general applicability. The results show the importance of combining surface nanogrooves with the strong polarity in orienting the molecular arrangement for high crystallinity toward efficient charge transport in organic semiconductors.

New Layered Materials and Functional Nanoelectronic Devices

NASA Astrophysics Data System (ADS)

Yu, Jaeeun

This thesis introduces functional nanomaterials including superatoms and carbon nanotubes (CNTs) for new layered solids and molecular devices. Chapters 1-3 present how we incorporate superatoms into two-dimensional (2D) materials. Chapter 1 describes a new and simple approach to dope transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Doping is an effective method to modulate the electrical properties of materials, and we demonstrate an electron-rich cluster can be used as a tunable and controllable surface dopant for semiconducting TMDCs via charge transfer. As a demonstration of the concept, we make a p-n junction by patterning on specific areas of TMDC films. Chapter 2 and Chapter 3 introduce new 2D materials by molecular design of superatoms. Traditional atomic van der Waals materials such as graphene, hexagonal boron-nitride, and TMDCs have received widespread attention due to the wealth of unusual physical and chemical behaviors that arise when charges, spins, and vibrations are confined to a plane. Though not as widespread as their atomic counterparts, molecule-based layered solids offer significant benefits; their structural flexibility will enable the development of materials with tunable properties. Chapter 2 describes a layered van der Waals solid self-assembled from a structure-directing building block and C60 fullerene. The resulting crystalline solid contains a corrugated monolayer of neutral fullerenes and can be mechanically exfoliated. Chapter 3 describes a new method to functionalize electroactive superatoms with groups that can direct their assembly into covalent and non-covalent multi-dimensional frameworks. We synthesized Co6Se8[PEt2(4-C6H4COOH)]6 and found that it forms two types of crystalline assemblies with Zn(NO3)2, one is a three-dimensional solid and the other consists of stacked layers of two-dimensional sheets. The dimensionality is controlled by subtle changes in reaction conditions. CNT-based field-effect transistor (FETs), in which a single molecule spans an oxidatively cut gap in the CNT, provide a versatile, ground-state platform with well-defined electrical contacts. For statistical studies of a variety of small molecule bridges, Chapter 4 presents a novel fabrication method to produce hundreds of FETs on one single carbon nanotube. A large number of devices allows us to study the stability and uniformity of CNT FET properties. Moreover, the new platform also enables a quantitative analysis of molecular devices. In particular, we used CNT FETs for studying DNA-mediated charge transport. DNA conductance was measured by connecting DNA molecules of varying lengths to lithographically cut CNT FETs.

Reaction of amorphous/crystalline SiOC/Fe interfaces by thermal annealing

DOE PAGES

Su, Qing; Zhernenkov, Mikhail; Ding, Hepeng; ...

2017-06-12

The development of revolutionary new alloys and composites is crucial to meeting materials requirements for next generation nuclear reactors. The newly developed amorphous silicon oxycarbide (SiOC) and crystalline Fe composite system has shown radiation tolerance over a wide range of temperatures. To advance understanding of this new composite, we investigate the structure and thermal stability of the interface between amorphous SiOC and crystalline Fe by combining various experimental techniques and simulation methods. We show that the SiOC/Fe interface is thermally stable up to at least 400 °C. When the annealing temperature reaches 600 °C, an intermixed region forms at thismore » interface. This region appears to be a crystalline phase that forms an incoherent interface with the Fe layer. Density functional theory (DFT) Molecular dynamics (MD) is performed on the homogeneous SiFeOC phase to study the early stages of 2 formation of the intermixed layer. Both experimental and simulation results suggest this phase has the fayalite crystal structure. As a result, the physical processes involved in the formation of the intermixed region are discussed.« less

Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwak, Jeong Hun; Lee, Sung Su; Lee, Hyeon Jun

2016-03-21

We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a substrate, as well as our study of the growth process of graphite films using a pulsed laser deposition combined with in-situ monitoring based on reflection high-energy electron diffraction technique. We monitored the structural evolution of nano-crystalline graphite films directly grown on AlN-coated Si substrates without any catalytic layer. We found that the carbon films grown for less than 600 s cannot manifest the graphite structure due to a high defect density arising from grain boundaries;more » however, the carbon film can gradually become a nano-crystalline graphite film with a thickness of approximately up to 5 nm. The Raman spectra and electrical properties of carbon films indicate that the nano-crystalline graphite films can be fabricated, even at the growth temperature as low as 850 °C within 600 s.« less

Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo2O5.5+δ thin films

NASA Astrophysics Data System (ADS)

Bao, Shanyong; Xu, Xing; Enriquez, Erik; Mace, Brennan E.; Chen, Garry; Kelliher, Sean P.; Chen, Chonglin; Zhang, Yamei; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qinyu

2015-12-01

Single-crystalline epitaxial thin films of PrBaCo2O5.5+δ (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200-800 °C. During the oxidation cycle under O2, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co2+/Co3+ → Co3+ and Co3+ → Co3+/Co4+, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO2)(PrO)(CoO2) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

Targeted Single-Site MOF Node Modification: Trivalent Metal Loading via Atomic Layer Deposition

DOE PAGES

Kim, In Soo; Borycz, Joshua; Platero-Prats, Ana E.; ...

2015-07-02

Postsynthetic functionalization of metal organic frameworks (MOFs) enables the controlled, high-density incorporation of new atoms on a crystallographically precise framework. Leveraging the broad palette of known atomic layer deposition (ALD) chemistries, ALD in MOFs (AIM) is one such targeted approach to construct diverse, highly functional, few-atom clusters. In this paper, we demonstrate the saturating reaction of trimethylindium (InMe 3) with the node hydroxyls and ligated water of NU-1000, which takes place without significant loss of MOF crystallinity or internal surface area. We computationally identify the elementary steps by which trimethylated trivalent metal compounds (ALD precursors) react with this Zr-based MOFmore » node to generate a uniform and well characterized new surface layer on the node itself, and we predict a final structure that is fully consistent with experimental X-ray pair distribution function (PDF) analysis. Finally, we further demonstrate tunable metal loading through controlled number density of the reactive handles (–OH and –OH 2) achieved through node dehydration at elevated temperatures.« less

Electroless silver plating of the surface of organic semiconductors.

PubMed

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Ag out-surface diffusion in crystalline SiC with an effective SiO 2 diffusion barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, H. Y.; Zhu, Z.

2015-05-07

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope ( 110mAg) through the SiC coating layer is a safety concern. In order to understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. Our results suggestmore » little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO 2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua

2015-09-01

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration ofmore » buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Targeted Single-Site MOF Node Modification: Trivalent Metal Loading via Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, In Soo; Borycz, Joshua; Platero-Prats, Ana E.

Postsynthetic functionalization of metal organic frameworks (MOFs) enables the controlled, high-density incorporation of new atoms on a crystallographically precise framework. Leveraging the broad palette of known atomic layer deposition (ALD) chemistries, ALD in MOFs (AIM) is one such targeted approach to construct diverse, highly functional, few-atom clusters. In this paper, we demonstrate the saturating reaction of trimethylindium (InMe 3) with the node hydroxyls and ligated water of NU-1000, which takes place without significant loss of MOF crystallinity or internal surface area. We computationally identify the elementary steps by which trimethylated trivalent metal compounds (ALD precursors) react with this Zr-based MOFmore » node to generate a uniform and well characterized new surface layer on the node itself, and we predict a final structure that is fully consistent with experimental X-ray pair distribution function (PDF) analysis. Finally, we further demonstrate tunable metal loading through controlled number density of the reactive handles (–OH and –OH 2) achieved through node dehydration at elevated temperatures.« less

Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance.

PubMed

Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min

2016-01-28

A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.

Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

NASA Astrophysics Data System (ADS)

Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

2017-06-01

The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM.

PubMed

Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

2016-04-01

Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Surface Modification of Titanium Using Anodization to Enhance Antimicrobial Properties and Osseointegration

NASA Astrophysics Data System (ADS)

Jain, Sakshi

Titanium and its alloys are frequently used in dental and orthopedic implants because they have good mechanical strength, chemical stability and biocompatibility. These properties can be further improved by surface treatments such as anodization that are able to grow thicker and produce crystalline oxide layers with controlled morphological and physico-chemical properties. Both anatase (A) and rutile (R) crystalline phases of titanium oxide have been shown to promote bioactivity and antimicrobial effects. In a previous study in our laboratories, four electrolyte mixtures were optimized to produce anodized layers on commercially pure titanium consisting of specific anatase and rutile oxide ratios at an endpoint forming voltage of 180 V. In the present study, changes that occurred in the anodized layers with increasing forming voltage including crystallinity, thickness, surface morphology, surface roughness, surface chemistry, fractal dimension, shear strength, and corrosion resistance were determined for each of these electrolytes. The results showed the crystallinity, thickness, surface pore sizes, and surface roughness increased with increasing forming voltage. Incorporation of phosphorus into the anodized layers was shown in phosphoric acid containing electrolytes at higher forming voltages. Decreases in corrosion resistance were also shown at higher forming voltages in each electrolyte due to increased pore interconnectivity within the anodized layers. In addition, the apatite inducing ability of anodized layers in SBF was examined for selected forming voltages in each electrolyte. Anodization in phosphoric acid containing electrolytes was shown to be more favorable for apatite formation. The streptococcal and MRSA bacterial attachment before and after UV treatments was determined for selected forming voltages in each electrolyte. Additionally, the killing efficacy after 10-minute pre-irradiation with UVA or UVC treatments was determined. UVA treatments showed trends of at least a 20% reduction in bacterial attachment regardless of the crystallinity within the oxide for S. sanguinis. The anodized layer with an approximately equal distribution of anatase and rutile phases showed bacterial killing efficacy over 50% for S. sanguinis and over 80% for MRSA after UVA or UVC treatments. Finally, two forming voltage sample groups in two of the electrolytes were examined for MC3T3E-1 cell attachment, proliferation, and differentiation. Total intracellular protein content, alkaline phosphatase (ALP) activity, osteocalcin (OCN) activity, and cellular mineralization were investigated for different time periods up to 21 days. All sample groups showed suitable cellular proliferation, differentiation, and maturation but those anodized in the phosphoric acid containing electrolyte showed delayed proliferation and early differentiation and maturation. Also, anodized samples containing at least 50% anatase were shown to produce higher osteoblast mineralization compared to majority rutile phase anodized layers.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Direct observation of vast off-stoichiometric defects in single crystalline SnSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di; Wu, Lijun; He, Dongsheng

Single crystalline tin selenide (SnSe) recently emerged as a very promising thermoelectric material for waste heat harvesting and thermoelectric cooling, due to its record high figure of merit ZT in mediate temperature range. The most striking feature of SnSe lies in its extremely low lattice thermal conductivity as ascribed to the anisotropic and highly distorted Sn-Se bonds as well as the giant bond anharmonicity by previous studies, yet no theoretical models so far can give a quantitative explanation to such low a lattice thermal conductivity. Here, we presented direct observation of an astonishingly vast number of off-stoichiometric Sn vacancies andmore » Se interstitials, using sophisticated aberration corrected scanning transmission electron microscope; and credited the previously reported ultralow thermal conductivity of the SnSe single crystalline samples partly to their off-stoichiometric feature. In order to further validate the conclusion, we also synthesized stoichiometric SnSe single crystalline samples, and illustrated that the lattice thermal conductivity is deed much higher as compared with the off-stoichiometric single crystals. Finally, the scattering efficiency of individual point defect on heat-carrying phonons was then discussed in the state-of-art Debye-Callaway model.« less

Porous and single-crystalline ZnO nanobelts: fabrication with annealing precursor nanobelts, and gas-sensing and optoelectronic performance

NASA Astrophysics Data System (ADS)

Jin, Xiao-Bo; Li, Yi-Xiang; Su, Yao; Guo, Zheng; Gu, Cui-Ping; Huang, Jia-Rui; Meng, Fan-Li; Huang, Xing-Jiu; Li, Min-Qiang; Liu, Jin-Huai

2016-09-01

Porous and single-crystalline ZnO nanobelts have been prepared through annealing precursors of ZnSe · 0.5N2H4 well-defined and smooth nanobelts, which have been synthesized via a simple hydrothermal method. The composition and morphology evolutions with the calcination temperatures have been investigated in detail for as-prepared precursor nanobelts, suggesting that they can be easily transformed into ZnO nanobelts by preserving their initial morphology via calcination in air. In contrast, the obtained ZnO nanobelts are densely porous, owing to the thermal decomposition and oxidization of the precursor nanobelts. More importantly, the achieved porous ZnO nanobelts are single-crystalline, different from previously reported ones. Motivated by the intrinsic properties of the porous structure and good electronic transporting ability of single crystals, their gas-sensing performance has been further explored. It is demonstrated that porous ZnO single-crystalline nanobelts exhibit high response and repeatability toward volatile organic compounds, such as ethanol and acetone, with a short response/recovery time. Furthermore, their optoelectronic behaviors indicate that they can be promisingly employed to fabricate photoelectrochemical sensors.

Direct observation of vast off-stoichiometric defects in single crystalline SnSe

DOE PAGES

Wu, Di; Wu, Lijun; He, Dongsheng; ...

2017-04-06

Single crystalline tin selenide (SnSe) recently emerged as a very promising thermoelectric material for waste heat harvesting and thermoelectric cooling, due to its record high figure of merit ZT in mediate temperature range. The most striking feature of SnSe lies in its extremely low lattice thermal conductivity as ascribed to the anisotropic and highly distorted Sn-Se bonds as well as the giant bond anharmonicity by previous studies, yet no theoretical models so far can give a quantitative explanation to such low a lattice thermal conductivity. Here, we presented direct observation of an astonishingly vast number of off-stoichiometric Sn vacancies andmore » Se interstitials, using sophisticated aberration corrected scanning transmission electron microscope; and credited the previously reported ultralow thermal conductivity of the SnSe single crystalline samples partly to their off-stoichiometric feature. In order to further validate the conclusion, we also synthesized stoichiometric SnSe single crystalline samples, and illustrated that the lattice thermal conductivity is deed much higher as compared with the off-stoichiometric single crystals. Finally, the scattering efficiency of individual point defect on heat-carrying phonons was then discussed in the state-of-art Debye-Callaway model.« less

Broadband dielectric spectroscopy on single-crystalline and ceramic CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2007-07-01

The authors present dielectric measurements of the colossal dielectric constant material CaCu3Ti4O12 extending up to 1.3GHz also covering so far only rarely investigated single-crystalline samples. Special emphasis is put on the second relaxation reported in several works on polycrystals, which the authors detect also in single crystals. For polycrystalline samples, the authors provide a recipe to achieve values of the dielectric constant as high as in single crystals.

An optical investigation of nano-crystalline CaF2 particles doped with Nd3+ ions

NASA Astrophysics Data System (ADS)

O'Dwyer, C.; James, H. J.; Cheu, B.; Jaque, F.; Han, T. P. J.

2017-10-01

Good crystalline quality CaF2 sub-micron size particles doped with neodymium ions have been produced by the co-precipitation process and their crystallinity have been further improved by thermal treatment at 500 °C. Core and surface related luminescence defect centres have been identified and the effects of Y3+ and Yb3+ codopants are also investigated. Core defects centres are associated with single-ion and multi-ion defect centres as observed in bulk single crystal whereas the origin of the surface or near surface defect, A‧, centre has been ascertained to be derived from a single-ion centre most probably charge compensated by a hydroxyl group.

Surface-micromachined 2D optical scanners with optically flat single-crystalline silicon micromirrors

NASA Astrophysics Data System (ADS)

Su, John G.; Patterson, Pamela R.; Wu, Ming C.

2001-05-01

We have developed a novel wafer-scale single-crystalline silicon micromirror bonding process to fabricate optically flat micromirrors on polysilicon surface-micromachined 2D scanners. The electrostatically actuated 2D scanner has a mirror area of 450 micrometers x 450 micrometers and an optical scan angle of +/- +/-7.5 degree(s). Compared to micromirrors made with a standard polysilicon surface-micromachining process, the radius of curvature of the micromirror has been improved by 1 50 times from 1.8 cm to 265 cm, with surface roughness < 10 nm. Besides, single-crystalline honeycomb micromirrors derived from silicon on insulator (SOI) have been developed to reduce the mass of the bonded mirror.

Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures.

PubMed

Burdin, Dmitrii A; Ekonomov, Nikolai A; Chashin, Dmitrii V; Fetisov, Leonid Y; Fetisov, Yuri K; Shamonin, Mikhail

2017-10-16

The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass) alloy or nickel with a thickness of 20-200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect-such as the mechanical resonance frequency f r , the quality factor Q and the magnitude of the magnetoelectric coefficient α E at the resonance frequency-are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters-Young's modulus Y , the acoustic quality factor of individual layers, the dielectric constant ε , the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ (n) of the ferromagnetic layer-are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices.

Preservation of rodent bones from El Harhoura 2 cave (Morocco, Neolithic - Middle Palaeolithic): Microstructure, mineralogy, crystallinity and composition

NASA Astrophysics Data System (ADS)

Farre, Bastien; Massard, Pierre; Nouet, Julius; Dauphin, Yannicke

2014-04-01

Thin sections, scanning electron microscopy (SEM), diffraction X (DRX) and infrared spectrometry (FTIR) have been used to study the structure, mineralogy, crystallinity and bulk composition of fossil rodent long bones extracted from a succession of sedimentary layers in a cave from Morocco (Neolithic - Middle Palaeolithic, El Harhoura 2). The microstructure of fossil bones is well-preserved at this scale of observation, and encrusted deposits are rare. All bones are preserved in apatite, but the crystallinity is modified, as well as the crystallite shape, the organic content and the organic-mineral ratio. No fluor enrichment has been observed. Alone or together, the studied parameters do not show a regular trend from the upper to the lower layers of the cave. The preservation of the fossil bones does not confirm the sequence of arid and humid periods inferred from taphonomic analyses.

GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids

NASA Astrophysics Data System (ADS)

Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

2016-02-01

Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g -GaN ) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g -GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g -GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g -GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g -GaN are preserved when g -GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g -GaN , is found to be an excellent substrate for growing g -GaN . Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g -GaN , and they can display electronic and optical properties that can be controlled by the number of g -GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g -GaN layers.

Non-wetting surface-driven high-aspect-ratio crystalline grain growth for efficient hybrid perovskite solar cells

DOE PAGES

Bi, Cheng; Wang, Qi; Shao, Yuchuan; ...

2015-07-20

Large-aspect-ratio grains are needed in polycrystalline thin-film solar cells for reduced charge recombination at grain boundaries; however, the grain size in organolead trihalide perovskite (OTP) films is generally limited by the film thickness. Here we report the growth of OTP grains with high average aspect ratio of 2.3–7.9 on a wide range of non-wetting hole transport layers (HTLs), which increase nucleus spacing by suppressing heterogeneous nucleation and facilitate grain boundary migration in grain growth by imposing less drag force. The reduced grain boundary area and improved crystallinity dramatically reduce the charge recombination in OTP thin films to the level inmore » OTP single crystals. Combining the high work function of several HTLs, a high stabilized device efficiency of 18.3% in low-temperature-processed planar-heterojunction OTP devices under 1 sun illumination is achieved. As a result, this simple method in enhancing OTP morphology paves the way for its application in other optoelectronic devices for enhanced performance.« less

MgCoAl and NiCoAl LDHs synthesized by the hydrothermal urea hydrolysis method: Structural characterization and thermal decomposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chagas, L.H., E-mail: lhchagas-prometro@inmetro.gov.br; Instituto Nacional de Metrologia Qualidade e Tecnologia, Divisão de Metrologia de Materiais, 25250-020 Duque de Caxias, RJ; De Carvalho, G.S.G.

Highlights: • We synthesized MgCoAl and NiCoAl LDHs by the urea hydrolysis method. • Aluminum rich and crystalline materials have been formed. • The calcination of the LDHs generated mixed oxides with high surface areas. - Abstract: Layered double hydroxides (LDHs) with Mg/Co/Al and Ni/Co/Al were synthesized for the first time by the urea hydrolysis method. The experimental conditions promoted aluminum rich and crystalline materials. The formation of LDHs was investigated by powder X-ray diffraction (XRD), chemical analysis, solid state nuclear magnetic resonance with magic angle spinning ({sup 27}Al-MAS-NMR), simultaneous thermogravimetric/differential thermal analysis (TGA/DTA), FTIR spectroscopy, scanning electron microscopy (SEM),more » and N{sub 2} adsorption–desorption experiments. A single phase corresponding to LDH could be obtained in all the investigated compositions. Thermal calcination of these LDHs at 500 °C resulted in the formation of solid solutions in which Al{sup 3+} was dissolved. All the calcined materials have rock-salt like structures and high surface areas.« less

Growth of Bi2Se3 topological insulator thin film on Ge(1 1 1) substrate

NASA Astrophysics Data System (ADS)

Kim, Seungyeon; Lee, Sangsoo; Woo, Jeongseok; Lee, Geunseop

2018-02-01

Atomically smooth, single crystalline Bi2Se3 thin films were grown on a Ge(1 1 1) substrate using molecular beam epitaxy. Crystallinities of both the surface and the bulk as well as the stoichiometry of the grown film were characterized by using low-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and photoelectron spectroscopies. Hexagonal atomic structures, quintuple layer steps observed in STM images confirmed that the Bi2Se3 film with a (0 0 0 1) surface was grown. Diffraction peak positions as well as the chemical composition determined from the core-level photoelectron spectra coincide well with those expected for the Bi2Se3 crystal. The surface state with a Dirac cone was observed in the valence photoelectron spectra, which also support that a high-quality Bi2Se3 film was grown on the Ge(1 1 1) substrate. The interface between Ge(1 1 1) and Bi2Se3(0 0 0 1) is expected to be abrupt due to the small lattice between them.

Early changes in retinal structure and BMP2 expression in the retina and crystalline lens of streptozotocin-induced diabetic pigs.

PubMed

Jeong, Jae Seung; Lee, Woon-Kyu; Moon, Yeon Sung; Kim, Na Rae

2017-09-01

This study aims to evaluate early changes in retinal structure and BMP2 expression in the retina and crystalline lens by comparing streptozotocin-induced diabetic pigs and normal control group pigs. Five eye samples from five diabetic Micro-pigs (Medikinetics, Pyeongtaek, Korea) and five eye samples from five control pigs bred in a specific pathogen-free area were used. Diabetes was developed through intravenous injection of nicotinamide and streptozotocin, and the average fasting glucose level was maintained at 250 mg/dL or higher for 16 weeks. To evaluate BMP2 expression in the retina and crystalline lens, Western blotting was performed. In Hematoxylin and Eosin staining, most diabetic pigs showed structural abnormalities in the inner plexiform layer. The number of nuclei in the ganglion cell layer within the range of 10 4 µm 2 was 3.78±0.60 for diabetic pigs and 5.57±1.07 for control group pigs, showing a statistically significant difference. In immunohistochemical staining, diabetic retinas showed an overall increase in BMP2 expression. In Western blotting, the average BMP2/actin level of diabetic retinas was 1.19±0.05, showing a significant increase compared to the 1.06±0.03 of the control group retinas ( P =0.016). The BMP2/actin level of diabetic crystalline lenses was similar to the control group crystalline lenses ( P =0.730). Compared to control group pigs, the number of nuclei in the inner nuclear layer of retinas from streptozotocin-induced diabetic pigs decreased, while an increase in BMP2 expression was observed in the retina of diabetic pigs.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

NASA Astrophysics Data System (ADS)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2016-12-01

Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

In Vitro Characterization of the Two-Stage Non-Classical Reassembly Pathway of S-Layers

PubMed Central

Breitwieser, Andreas; Iturri, Jagoba; Toca-Herrera, Jose-Luis; Sleytr, Uwe B.; Pum, Dietmar

2017-01-01

The recombinant bacterial surface layer (S-layer) protein rSbpA of Lysinibacillus sphaericus CCM 2177 is an ideal model system to study non-classical nucleation and growth of protein crystals at surfaces since the recrystallization process may be separated into two distinct steps: (i) adsorption of S-layer protein monomers on silicon surfaces is completed within 5 min and the amount of bound S-layer protein sufficient for the subsequent formation of a closed crystalline monolayer; (ii) the recrystallization process is triggered—after washing away the unbound S-layer protein—by the addition of a CaCl2 containing buffer solution, and completed after approximately 2 h. The entire self-assembly process including the formation of amorphous clusters, the subsequent transformation into crystalline monomolecular arrays, and finally crystal growth into extended lattices was investigated by quartz crystal microbalance with dissipation (QCM-D) and atomic force microscopy (AFM). Moreover, contact angle measurements showed that the surface properties of S-layers change from hydrophilic to hydrophobic as the crystallization proceeds. This two-step approach is new in basic and application driven S-layer research and, most likely, will have advantages for functionalizing surfaces (e.g., by spray-coating) with tailor-made biological sensing layers. PMID:28216572

On the Binding Stress-Enhanced Sensitivity of (Pb(Mg1/3Nb2/3)O3)0.65-(PbTiO3) 0.35 (PMN-PT) Piezoelectric Plate Sensor (PEPS)

NASA Astrophysics Data System (ADS)

Wu, Wei

(Pb(Mg1/3Nb2/3)O3)0.65-(PbTiO 3)0.35 (PMN-PT) piezoelectric plate sensor (PEPS) showed enhanced sensitivity in chemical and biological sensing applications which has been attributed to binding-induced crystalline orientation switching in the PMN-PT layer. However, so far there has been no direct demonstration of PEPS crystalline orientation switching upon target-analyte binding. Using biotin and streptavidin binding as a model detection system and by direct X-Ray diffraction observations after analyte binding we have unambiguously demonstrated that switching of the crystalline orientations of the PMN-PT layer indeed occurred. In addition, we have shown that PEPS sensitivity enhancement increased with an increasing transverse electromechanical coupling constant, -k31, of the PMN-PT layer--which is known to correlate with the crystalline orientation switching capability--by increasing the grain size of the PMN-PT layer or by applying a DC bias electric field. Finally, unprecedented high sensitivity of PEPS with high -k31, (i.e., -k31 > 0.3) were illustrated by the aM (10-18 M) sensitivity of in situ DNA hybridization detection without amplification and by the 100 fg/ml (10-13 g/ml) sensitivity of rapid, in situ protein detection in biological fluids such as troponin I detection in serum for early sign of myocardial infarction (heart attack), Her2 detection in serum for cancer treatment and monitoring, Tn antigen and anti-Tn antibody detection in serum for early cancer detection, and Toxins detection in stool for Clostridium difficile infection detection.

Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Wells, B. O.; Shen, Z.-X.; Dessau, D. S.; Lindau, I.; Spicer, W. E.; Mitzi, D. B.; Kapitulnik, A.

1990-03-01

Photoemission results from Al and Rb interfaces with single crystals of Bi2Sr2CaCu2O8 high-temperature superconductors are reported. The Al and Rb adsorbates are found to react quite differently with the Bi2Sr2CaCu2O8 substrate. While adatoms of Rb significantly affect only the Bi and O atoms in the top atomic layer, the Al adsorbate profoundly disrupts the bonding character of the whole Bi2Sr2CaCu2O8 material. For Al, the Bi and Cu states are strongly reduced, and the Sr and O states show evidence of oxidized components. In addition, Al causes a strong out-diffusion of oxygen from the bulk. The differences in the reactivity of Al and Rb are discussed in terms of the different mobility of the two atoms.

Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene.

PubMed

Kochat, Vidya; Tiwary, Chandra Sekhar; Biswas, Tathagata; Ramalingam, Gopalakrishnan; Hsieh, Kimberly; Chattopadhyay, Kamanio; Raghavan, Srinivasan; Jain, Manish; Ghosh, Arindam

2016-01-13

Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device quality and their electronic performance. Here we show that the grain boundaries in graphene which induce additional scattering of carriers in the conduction channel also act as an additional and strong source of electrical noise especially at the room temperature. From graphene field effect transistors consisting of single GB, we find that the electrical noise across the graphene GBs can be nearly 10 000 times larger than the noise from equivalent dimensions in single crystalline graphene. At high carrier densities (n), the noise magnitude across the GBs decreases as ∝1/n, suggesting Hooge-type mobility fluctuations, whereas at low n close to the Dirac point, the noise magnitude could be quantitatively described by the fluctuations in the number of propagating modes across the GB.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

NASA Astrophysics Data System (ADS)

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-12-01

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Heteroepitaxial growth of tin-doped indium oxide films on single crystalline yttria stabilized zirconia substrates

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Yagami, Teruyuki; Takaki, Satoru; Shigesato, Yuzo

1994-05-01

Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100]∥YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.

Non-destructive detection of cross-sectional strain and defect structure in an individual Ag five-fold twinned nanowire by 3D electron diffraction mapping.

PubMed

Fu, Xin; Yuan, Jun

2017-07-24

Coherent x-ray diffraction investigations on Ag five-fold twinned nanowires (FTNWs) have drawn controversial conclusions concerning whether the intrinsic 7.35° angular gap could be compensated homogeneously through phase transformation or inhomogeneously by forming disclination strain field. In those studies, the x-ray techniques only provided an ensemble average of the structural information from all the Ag nanowires. Here, using three-dimensional (3D) electron diffraction mapping approach, we non-destructively explore the cross-sectional strain and the related strain-relief defect structures of an individual Ag FTNW with diameter about 30 nm. The quantitative analysis of the fine structure of intensity distribution combining with kinematic electron diffraction simulation confirms that for such a Ag FTNW, the intrinsic 7.35° angular deficiency results in an inhomogeneous strain field within each single crystalline segment consistent with the disclination model of stress-relief. Moreover, the five crystalline segments are found to be strained differently. Modeling analysis in combination with system energy calculation further indicates that the elastic strain energy within some crystalline segments, could be partially relieved by the creation of stacking fault layers near the twin boundaries. Our study demonstrates that 3D electron diffraction mapping is a powerful tool for the cross-sectional strain analysis of complex 1D nanostructures.

Designing of luminescent GdPO4:Eu@LaPO4@SiO2 core/shell nanorods: Synthesis, structural and luminescence properties

NASA Astrophysics Data System (ADS)

Ansari, Anees A.; Labis, Joselito P.; Aslam Manthrammel, M.

2017-09-01

GdPO4:Eu3+ (core) and GdPO4:Eu@LaPO4 (core/shell) nanorods (NRs) were successfully prepared by urea based co-precipitation process at ambient conditions which was followed by coating with amorphous silica shell via the sol-gel chemical route. The role of surface coating on the crystal structure, crystallinity, morphology, solubility, surface chemistry and luminescence properties were well investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, Fourier Transform Infrared (FTIR), UV-Vis, and photoluminescence spectroscopy. XRD pattern revealed highly purified, well-crystalline, single phase-hexagonal-rhabdophane structure of GdPO4 crystal. The TEM micrographs exhibited highly crystalline and narrow size distributed rod-shaped GdPO4:Eu3+ nanostructures with average width 14-16 nm and typical length 190-220 nm. FTIR spectra revealed characteristic infrared absorption bands of amorphous silica. High absorbance in a visible region of silica modified core/shell/Si NRs in aqueous environment suggests the high solubility along with colloidal stability. The photoluminescence properties were remarkably enhanced after growth of undoped LaPO4 layers due to the reduction of nonradiative transition rate. The advantages of presented high emission intensity and high solubility of core/shell and core/shell/Si NRs indicated the potential applications in monitoring biological events.

Single-crystalline nanogap electrodes: enhancing the nanowire-breakdown process with a gaseous environment.

PubMed

Suga, Hiroshi; Sumiya, Touru; Furuta, Shigeo; Ueki, Ryuichi; Miyazawa, Yosuke; Nishijima, Takuya; Fujita, Jun-ichi; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

2012-10-24

A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was evaluated using scanning electron microscopy and transmission electron microscopy. Nanogap electrodes sandwiched between Pt-large-crystal-grains were obtained by the breakdown of the wire in an O(2) or H(2) atmosphere. These nanogap electrodes show intense spots in the electron diffraction pattern. The diffraction pattern corresponds to Pt (111), indicating that single-crystal grains are grown by the electrical wire breakdown process in an O(2) or H(2) atmosphere. The Pt wires that have (111)-texture and coherent boundaries can be considered ideal as interconnectors for single molecular electronics. The simple method for fabrication of a single-crystalline nanogap is one of the first steps toward standard nanogap electrodes for single molecular instruments and opens the door to future research on physical phenomena in nanospaces.

Predicting the optimal process window for the coating of single-crystalline organic films with mobilities exceeding 7 cm2/Vs.

NASA Astrophysics Data System (ADS)

Janneck, Robby; Vercesi, Federico; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2016-09-01

Organic thin film transistors (OTFTs) based on single crystalline thin films of organic semiconductors have seen considerable development in the recent years. The most successful method for the fabrication of single crystalline films are solution-based meniscus guided coating techniques such as dip-coating, solution shearing or zone casting. These upscalable methods enable rapid and efficient film formation without additional processing steps. The single-crystalline film quality is strongly dependent on solvent choice, substrate temperature and coating speed. So far, however, process optimization has been conducted by trial and error methods, involving, for example, the variation of coating speeds over several orders of magnitude. Through a systematic study of solvent phase change dynamics in the meniscus region, we develop a theoretical framework that links the optimal coating speed to the solvent choice and the substrate temperature. In this way, we can accurately predict an optimal processing window, enabling fast process optimization. Our approach is verified through systematic OTFT fabrication based on films grown with different semiconductors, solvents and substrate temperatures. The use of best predicted coating speeds delivers state of the art devices. In the case of C8BTBT, OTFTs show well-behaved characteristics with mobilities up to 7 cm2/Vs and onset voltages close to 0 V. Our approach also explains well optimal recipes published in the literature. This route considerably accelerates parameter screening for all meniscus guided coating techniques and unveils the physics of single crystalline film formation.

Arsenic Sorption on TiO2 Nanoparticles: Size And Crystallinity Effects

EPA Science Inventory

Single solute As (III) and As (V) sorption on nano-sized amorphous and crystalline TiO₂ was investigated to determine: size and crystallinity effects on arsenic sorption capacities, possible As (III) oxidation, and the nature of surface complexes. Amorphous and cryst...

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Multifunctional Diketopyrrolopyrrole-Based Conjugated Polymers with Perylene Bisimide Side Chains.

PubMed

Li, Cheng; Yu, Changshi; Lai, Wenbin; Liang, Shijie; Jiang, Xudong; Feng, Guitao; Zhang, Jianqi; Xu, Yunhua; Li, Weiwei

2017-11-24

Two conjugated polymers based on diketopyrrolopyrrole (DPP) in the main chain with different content of perylene bisimide (PBI) side chains are developed. The influence of PBI side chain on the photovoltaic performance of these DPP-based conjugated polymers is systematically investigated. This study suggests that the PBI side chains can not only alter the absorption spectrum and energy level but also enhance the crystallinity of conjugated polymers. As a result, such polymers can act as electron donor, electron acceptor, and single-component active layer in organic solar cells. These findings provide a new guideline for the future molecular design of multifunctional conjugated polymers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators

NASA Astrophysics Data System (ADS)

Ziss, Dorian; Martín-Sánchez, Javier; Lettner, Thomas; Halilovic, Alma; Trevisi, Giovanna; Trotta, Rinaldo; Rastelli, Armando; Stangl, Julian

2017-04-01

In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobate-lead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows us to explain this unexpected result with the presence of complex interface structures between the different layers.

Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators

PubMed Central

Ziss, Dorian; Martín-Sánchez, Javier; Lettner, Thomas; Halilovic, Alma; Trevisi, Giovanna; Trotta, Rinaldo; Rastelli, Armando; Stangl, Julian

2017-01-01

In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobate-lead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the “soft” SU8 bonding in comparison to the “hard” bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows us to explain this unexpected result with the presence of complex interface structures between the different layers. PMID:28522879

Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators.

PubMed

Ziss, Dorian; Martín-Sánchez, Javier; Lettner, Thomas; Halilovic, Alma; Trevisi, Giovanna; Trotta, Rinaldo; Rastelli, Armando; Stangl, Julian

2017-04-01

In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobate-lead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows us to explain this unexpected result with the presence of complex interface structures between the different layers.

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon

NASA Astrophysics Data System (ADS)

Chen, Lei; Qi, Yaqiong; Yu, Bingjun; Qian, Linmao

2017-06-01

Fundamental understanding of tribochemical wear mechanism of oxide-free single crystalline silicon (without native oxide layer) is essential to optimize the process of ultra-precision surface manufacturing. Here, we report sliding speed-dependent nanowear of oxide-free silicon against SiO2 microspheres in air and in deionized water. When contact pressure is too low to induce Si yield, tribochemical wear occurs with the existence of water molecules and wear volume decreases logarithmically to constant as sliding speed increased. TEM and Raman observations indicate that the dynamics of rupture and reformation of interfacial bonding bridges result in the variation of tribochemical wear of the oxide-free Si with the increase of sliding speed.

Tension-controlled single-crystallization of copper foils for roll-to-roll synthesis of high-quality graphene films

NASA Astrophysics Data System (ADS)

Jo, Insu; Park, Subeom; Kim, Dongjin; San Moon, Jin; Park, Won Bae; Kim, Tae Hyeong; Hyoun Kang, Jin; Lee, Wonbae; Kim, Youngsoo; Lee, Dong Nyung; Cho, Sung-Pyo; Choi, Hyunchul; Kang, Inbyeong; Park, Jong Hyun; Lee, Jeong Soo; Hong, Byung Hee

2018-04-01

It has been known that the crystalline orientation of Cu substrates plays a crucial role in chemical vapor deposition (CVD) synthesis of high-quality graphene. In particular, Cu (1 1 1) surface showing the minimum lattice mismatch with graphene is expected to provide an ideal catalytic reactivity that can minimize the formation of defects, which also induces larger single-crystalline domain sizes of graphene. Usually, the Cu (1 1 1) substrates can be epitaxially grown on single-crystalline inorganic substrates or can be recrystallized by annealing for more than 12 h, which limits the cost and time-effective synthesis of graphene. Here, we demonstrate a new method to optimize the crystalline orientations of vertically suspended Cu foils by tension control during graphene growth, resulting in large-area recrystallization into Cu (1 1 1) surface as the applied tension activates the grain boundary energy of Cu and promotes its abnormal grain growth to single crystals. In addition, we found a clue that the formation of graphene cooperatively assists the recrystallization into Cu (1 1 1) by minimizing the surface energy of Cu. The domain sizes and charge carrier mobility of graphene grown on the single-crystalline Cu (1 1 1) are 5 times and ~50% increased, respectively, in comparison with those of graphene from Cu (1 0 0), indicating that the less lattice mismatch and the lower interaction energy between Cu (1 1 1) and graphene allows the growth of larger single-crystalline graphene with higher charge carrier mobility. Thus, we believe that our finding provides a crucial idea to design a roll-to-roll (R2R) graphene synthesis system where the tension control is inevitably involved, which would be of great importance for the continuous production of high-quality graphene in the future.

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

2015-02-23

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysismore » also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.« less

Single- and two-color infrared focal plane arrays made by MBE in HgCdTe

NASA Astrophysics Data System (ADS)

Zanatta, Jean-Paul; Ferret, P.; Loyer, R.; Petroz, G.; Cremer, S.; Chamonal, Jean-Paul; Bouchut, Philippe; Million, Alain; Destefanis, Gerard L.

2000-12-01

We present here recent developments obtained at LETI infrared laboratory in the field of infrared detectors made in HgCdTe material and using the molecular beam epitaxial growth technique (MBE). We discuss the metallurgical points (growth temperature and flux control) that lead to achieve excellent quality epitaxial layers grown by MBE. We show a run-to-run reproducibility measured on growth run of more than 15 layers. The crystalline quality, surface morphology, and composition uniformity are excellent. The etch pits density (EPD) are in the low 105.cm-2 when HgCdTe grows on a CdZnTe substrate. Transport properties reveal a low n-type carrier concentration in the 1014 to 1015.cm-3 range with a carrier mobility in excess of 105 cm2/V/sec at 77K for epilayers grown with 10 micrometers cutoff wavelength. We describe the performances of several kinds of our HgCdTe- MBE devices: single color MWIR and LWIR detectors on HgCdTe/CdZnTe operating at 77K in respectively (3-5 micrometers ) and (8-12 micrometers ) wavelength range; single color MWIR detectors on HgCdTe grown on germanium heterosubstrate operating at 77K in the (3-5 micrometers ) wavelength range; two color HgCdTe detectors operating within the MWIR (3-5 micrometers ) band.

Nano-Scale Spatial Assessment of Calcium Distribution in Coccolithophores Using Synchrotron-Based Nano-CT and STXM-NEXAFS

PubMed Central

Sun, Shiyong; Yao, Yanchen; Zou, Xiang; Fan, Shenglan; Zhou, Qing; Dai, Qunwei; Dong, Faqin; Liu, Mingxue; Nie, Xiaoqin; Tan, Daoyong; Li, Shuai

2014-01-01

Calcified coccolithophores generate calcium carbonate scales around their cell surface. In light of predicted climate change and the global carbon cycle, the biomineralization ability of coccoliths has received growing interest. However, the underlying biomineralization mechanism is not yet well understood; the lack of non-invasive characterizing tools to obtain molecular level information involving biogenic processes and biomineral components remain significant challenges. In the present study, synchrotron-based Nano-computed Tomography (Nano-CT) and Scanning Transmission X-ray Microscopy-Near-edge X-ray Absorption Fine Structure Spectromicroscopy (STXM-NEXAFS) techniques were employed to identify Ca spatial distribution and investigate the compositional chemistry and distinctive features of the association between biomacromolecules and mineral components of calcite present in coccoliths. The Nano-CT results show that the coccolith scale vesicle is similar as a continuous single channel. The mature coccoliths were intracellularly distributed and immediately ejected and located at the exterior surface to form a coccoshpere. The NEXAFS spectromicroscopy results of the Ca L edge clearly demonstrate the existence of two levels of gradients spatially, indicating two distinctive forms of Ca in coccoliths: a crystalline-poor layer surrounded by a relatively crystalline-rich layer. The results show that Sr is absorbed by the coccoliths and that Sr/Ca substitution is rather homogeneous within the coccoliths. Our findings indicate that synchrotron-based STXM-NEXAFS and Nano-CT are excellent tools for the study of biominerals and provide information to clarify biomineralization mechanism. PMID:25530614

Cubic anisotropy in (Ga,Mn)As layers: Experiment and theory

NASA Astrophysics Data System (ADS)

Sawicki, M.; Proselkov, O.; Sliwa, C.; Aleshkevych, P.; Domagala, J. Z.; Sadowski, J.; Dietl, T.

2018-05-01

Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., p -type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining uniaxial magnetic anisotropies associated with biaxial strain and nonrandom formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the cubic term: the theory predicts switchings of the easy axis between in-plane <100 > and <110 > directions as a function of the hole concentration, whereas only the <100 > orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field p -d Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven nonuniformities of the carrier density, both favoring the <100 > direction of the apparent easy axis. However, according to our results, when the disorder gets reduced, a switching to the <110 > orientation is possible in a certain temperature and hole concentration range.

Liquid Crystalline Behavior and Related Properties of Colloidal Systems of Inorganic Oxide Nanosheets

PubMed Central

Nakato, Teruyuki; Miyamoto, Nobuyoshi

2009-01-01

Inorganic layered crystals exemplified by clay minerals can be exfoliated in solvents to form colloidal dispersions of extremely thin inorganic layers that are called nanosheets. The obtained “nanosheet colloids” form lyotropic liquid crystals because of the highly anisotropic shape of the nanosheets. This system is a rare example of liquid crystals consisting of inorganic crystalline mesogens. Nanosheet colloids of photocatalytically active semiconducting oxides can exhibit unusual photoresponses that are not observed for organic liquid crystals. This review summarizes experimental work on the phase behavior of the nanosheet colloids as well as photochemical reactions observed in the clay and semiconducting nanosheets system.

Photovoltaic performance of block copolymer devices is independent of the crystalline texture in the active layer

DOE PAGES

Guo, Changhe; Lee, Youngmin; Lin, Yen -Hao; ...

2016-06-15

The electronic properties of organic semiconductors are strongly influenced by intermolecular packing. When cast as thin films, crystalline π-conjugated molecules are strongly textured, potentially leading to anisotropic charge transport. Consequently, it is hypothesized that the orientation of crystallites in the active layer plays an important role in charge extraction and organic photovoltaic device performance. Here we demonstrate orientation control of molecular packing from mostly face-on to edge-on configurations in the active layer of P3HT- b-PFTBT block copolymer photovoltaics using 1-chloronaphthalene as a solvent additive. The effect of molecular orientations in P3HT crystals on charge transport and solar cell performance ismore » examined. We find that optimized photovoltaic device performance is independent of the crystalline texture of P3HT. Our observations provide further insights into the molecular organization required for efficient charge transport and overall device efficiencies. That is, the dominant crystal orientation, whether face-on or edge-on, is not critical to organic solar cells. Furthermore, a broad distribution of crystallite orientations ensures pathways for charge transport in any direction and enables efficient charge extraction in photovoltaic devices.« less

Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S/D Implants in an Existing Batch Implanter Production Line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kontratenko, Serguei; Krimbacher, Bernhard

2008-11-03

This paper is focused on the integration and qualification of an Axcelis Optima HD single wafer high current spot beam implanter in an existing 200 mm production line with different types of Axcelis batch implanters for high current applications. Both the design of the beamline and the beam shape are comparable between single wafer and batch high current spot beam implanters. In contrast to the single wafer high current ribbon beam implanter, energy contamination is not a concern for the considered spot beam tool because the drift mode can be used down to energies in the 2 keV region. Themore » most important difference between single wafer and batch high current implanters is the significantly higher dose rate and, therefore, the higher damage rate for the single wafer tool due to the different scanning architecture. The results of the integration of high dose implantations, mainly for p- and n-S/D formation, for DRAM 110 nm without pre-amorphization implantation (PAI), CMOS Logic from around 250 nm down to 90 nm without and with PAI, are presented and discussed. Dopant concentration profile analysis using SIMS was performed for different technologies and implantation conditions. The impurity activation was measured using sheet resistance and in some cases spreading resistance technique was applied. The amorphous layer thickness was measured using TEM. Finally, device data are presented in combination with dose, energy and beam current variations. The results have shown that the integration of implantation processes into crystalline structure without PAI is more complex and time consuming than implantations into amorphous layer where the damage difference due to the different dose rates is negligible.« less

Multi-technology Investigation of the Atomic Structure of Calcium Silicate Hydrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geng, Guoqing; Kilcoyne, David A.; Benmore, Chris J.

2015-01-01

In this study, synthetic C-S-H samples were investigated to reveal the feature at atomic scale. Rietveld refinement was applied to high resolution X-ray scattering data, yielding the lattice constants of the pseudocrystal structure, as well as the crystallinity along three axes. Near Edge X-ray Absorption Fine Structure (NEXAFS) spectra was collected at calcium L3,2-edge. Evolution of calcium coordination symmetry were studied by investigating spectra characteristics. Pair Distribution Function (PDF) study yields the statistics of atom pair distribution. Coordination number of Ca and Si were obtained by integrating Radial distribution function. Atomic model based on dimeric structure were discussed and comparedmore » with experimental data. Synthetic C-S-H samples with increasing Ca/Si ratio exhibit pseudo-crystal structure, resembling Dreierketten configuration similar to natural tobermorite structure. Along c-axis, the repeated structure could not survives two layers in case of low Ca/Si ratio (0.70, 1.05). But in high Ca/Si ratio (1.42) case, the crystallinity along c-axis is much bigger. The coordination number of Ca decreases with increasing Ca/Si ratio. Octahedrally coordinated Ca are observed in sample with Ca/Si ratio of 1.42. Various dimeric models are compared with experimental data. In case of Ca/Si ratio of 1.42, SiO4 tetrahedron chain needs to be shortened in linkage, most probably by substituting bridging SiO4 tetrahedron with CaO6 octahedron. These octahedrons in interlayer space act like pins to join two adjacent layer structures together. The crystallinity is thus increased along c-axis, and average coordination number is therefore reduced. In case of Ca/Si 1.05, crystallinity is low along c-axis since, indicating that not too many Ca ions exist in interlayer space to hold two layers together. Instead, negative charge of end oxygen could be balanced by proton. Ca/Si 0.70 has long tetrahedron chain linkage within layer while the linkage between adjacent layers are not strong, resulting in low crystallinity along c-axis. Neither Ca/Si ratio 0.70 nor 1.42 sample contains any Ca in octahedral symmetry, as indicated by the weak crystal field splitting of NEXAFS spectra.« less

Development of scintillating screens based on the single crystalline films of Ce doped (Gd,Y)3(Al,Ga,Sc)5O12 multi-component garnets

NASA Astrophysics Data System (ADS)

Zorenko, Yuriy; Gorbenko, Vitaliy; Savchyn, Volodymyr; Zorenko, Tanya; Fedorov, Alexander; Sidletskiy, Oleg

2014-09-01

The paper is dedicated to development of scintillators based on single crystalline films of Ce doped (Gd,Y)3(Al,Ga,Sc)5O12 multi-component garnets onto Gd3Ga5O12 substrates using the liquid phase epitaxy method.

Synthesis and temperature dependent Raman studies of large crystalline faces topological GeBi4Te7 single crystal

NASA Astrophysics Data System (ADS)

Mal, Priyanath; Bera, G.; Turpu, G. R.; Srivastava, Sunil K.; Das, Pradip

2018-05-01

We present a study of structural and vibrational properties of topological insulator GeBi4Te7. Modified Bridgeman technique is employed to synthesize the single crystal with relatively large crystalline faces. Sharp (0 0 l) reflection confirms the high crystallinity of the single crystal. We have performed temperature dependent Raman measurement for both parallel and perpendicular to crystallographic c axis geometry. In parallel configuration we have observed seven Raman modes whereas in perpendicular geometry only four of these are identified. Appearance and disappearance of Raman modes having different intensities for parallel and perpendicular to c measurement attribute to the mode polarization. Progressive blue shift is observed with lowering temperature, reflects the increase in internal stress.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Highly crystalline lithium titanium oxide sheets coated with nitrogen-doped carbon enable high-rate lithium-ion batteries.

PubMed

Han, Cuiping; He, Yan-Bing; Li, Baohua; Li, Hongfei; Ma, Jun; Du, Hongda; Qin, Xianying; Yang, Quan-Hong; Kang, Feiyu

2014-09-01

Sheets of Li4Ti5O12 with high crystallinity are coated with nitrogen-doped carbon (NC-LTO) using a controlled process, comprising hydrothermal reaction followed by chemical vapor deposition (CVD). Acetonitrile (CH3 CN) vapor is used as carbon and nitrogen source to obtain a thin coating layer of nitrogen-doped carbon. The layer enables the NC-LTO material to maintain its sheet structure during the high-temperature CVD process and to achieve high crystallinity. Doping with nitrogen introduces defects into the carbon coating layer, and this increased degree of disorder allows fast transportation of lithium ions in the layer. An electrode of NC-LTO synthesized at 700 °C exhibits greatly improved rate and cycling performance due to a markedly decreased total cell resistance and enhanced Li-ion diffusion coefficient (D(Li)). Specific capacities of 159.2 and 145.8 mA h g(-1) are obtained using the NC-LTO sheets, at charge/discharge rates of 1 and 10 C, respectively. These values are much higher than values for LTO particles did not undergo the acetonitrile CVD treatment. A capacity retention value as high as 94.7% is achieved for the NC-LTO sheets after 400 cycles in a half-cell at 5 C discharge rate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

HISTOCHEMICAL INVESTIGATIONS OF GLYCOGEN IN EYEBALL TISSUE IN RADIATION SICKNESS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullaev, V.M.

1964-03-01

Dogs and rabbits were irradiated with x-ray doses of 692 and 792 r, respectively. The animals were sacrificed at different periods following irradiation and the enucleated eyeballs embedded in celloidin and paraffin for histochemical study. Glycogen was nonuniformaly distributed as granules, lumps, powder, or a homogeneous mass in the normal coats of the eye. A high glycogen content was found in the eye muscles, conjunctival epithelium, sustentacular fibers of Muller, and vessels, especially those of the iris. There was a medium amount of glycogen in the corneal epithelium, rod and cone layer, ciliary muscles, and muscle bundles of the iris.more » Little glycogen was found in the outer plexiform and inner nuclear layers of the retina and in the substantia propria. Glycogen was lacking in the endothelium of Descemet's membrane and of the iris, the epithelium of the crystalline lens, and the glial cells of the optic nerve. The content and distribution of glycogen changed, depending on the severity and stage of radiation sickness. Increased glycogen content was noted in the eye muscles, outer layers of the retina, and vitreous body. A decrease was noted in the inner layers of the retina, the conjunctival epithelium, and in the nuclei of the crystalline lens. Glycogen disappeared in the crystalline lens in the areas of homogenation and fibrogenesis. (auth)« less

Solar cell structure incorporating a novel single crystal silicon material

DOEpatents

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Structural phase study in un-patterned and patterned PVDF semi-crystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramod, K., E-mail: rameshg.phy@pondiuni.edu.in; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu.in

2014-04-24

This work explores the structural phase studies of organic polymer- polyvinylidene fluoride (PVDF) thin films in semi-crystallized phase and nano-patterned PVDF thin films. The nanopatterns are transferred with the CD layer as a master using soft lithography technique. The semi-crystalline PVDF films were prepared by a still and hot (SH) method, using a homemade spin coater that has the proficiency of substrate heating by a halogen lamp. Using this set up, smooth PVDF thin films in semi-crystalline α-phase were prepared using 2-Butanone as solvent. XRD, AFM and confocal Raman microscope have been utilized to study the structural phase, crystallinity andmore » quality of the films.« less