Single Event Testing on Complex Devices: Test Like You Fly versus Test-Specific Design Structures

NASA Technical Reports Server (NTRS)

Berg, Melanie; LaBel, Kenneth A.

2014-01-01

We present a framework for evaluating complex digital systems targeted for harsh radiation environments such as space. Focus is limited to analyzing the single event upset (SEU) susceptibility of designs implemented inside Field Programmable Gate Array (FPGA) devices. Tradeoffs are provided between application-specific versus test-specific test structures.

Fault-Tolerant Sequencer Using FPGA-Based Logic Designs for Space Applications

DTIC Science & Technology

2013-12-01

Prototype Board SBU single bit upset SDK software development kit SDRAM synchronous dynamic random-access memory SEB single-event burnout ...current VHDL VHSIC hardware description language VHSIC very-high-speed integrated circuits VLSI very-large- scale integration VQFP very...transient pulse, called a single-event transient (SET), or even cause permanent damage to the device in the form of a burnout or gate rupture. The SEE

FPGA-based gating and logic for multichannel single photon counting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooser, Raphael C; Earl, Dennis Duncan; Evans, Philip G

2012-01-01

We present results characterizing multichannel InGaAs single photon detectors utilizing gated passive quenching circuits (GPQC), self-differencing techniques, and field programmable gate array (FPGA)-based logic for both diode gating and coincidence counting. Utilizing FPGAs for the diode gating frontend and the logic counting backend has the advantage of low cost compared to custom built logic circuits and current off-the-shelf detector technology. Further, FPGA logic counters have been shown to work well in quantum key distribution (QKD) test beds. Our setup combines multiple independent detector channels in a reconfigurable manner via an FPGA backend and post processing in order to perform coincidencemore » measurements between any two or more detector channels simultaneously. Using this method, states from a multi-photon polarization entangled source are detected and characterized via coincidence counting on the FPGA. Photons detection events are also processed by the quantum information toolkit for application testing (QITKAT)« less

Rad-Hard/HI-REL FPGA

NASA Technical Reports Server (NTRS)

Wang, Jih-Jong; Cronquist, Brian E.; McGowan, John E.; Katz, Richard B.

1997-01-01

The goals for a radiation hardened (RAD-HARD) and high reliability (HI-REL) field programmable gate array (FPGA) are described. The first qualified manufacturer list (QML) radiation hardened RH1280 and RH1020 were developed. The total radiation dose and single event effects observed on the antifuse FPGA RH1280 are reported on. Tradeoffs and the limitations in the single event upset hardening are discussed.

Fault Tree Analysis: An Operations Research Tool for Identifying and Reducing Undesired Events in Training.

ERIC Educational Resources Information Center

Barker, Bruce O.; Petersen, Paul D.

This paper explores the fault-tree analysis approach to isolating failure modes within a system. Fault tree investigates potentially undesirable events and then looks for failures in sequence that would lead to their occurring. Relationships among these events are symbolized by AND or OR logic gates, AND used when single events must coexist to…

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Analysis and Fault Injection Techniques Targeting Complex Designs Implemented in Xilinx-Virtex Family Field Programmable Gate Array (FPGA) Devices

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth; Kim, Hak

2014-01-01

An informative session regarding SRAM FPGA basics. Presenting a framework for fault injection techniques applied to Xilinx Field Programmable Gate Arrays (FPGAs). Introduce an overlooked time component that illustrates fault injection is impractical for most real designs as a stand-alone characterization tool. Demonstrate procedures that benefit from fault injection error analysis.

A SEU-Hard Flip-Flop for Antifuse FPGAs

NASA Technical Reports Server (NTRS)

Katz, R.; Wang, J. J.; McCollum, J.; Cronquist, B.; Chan, R.; Yu, D.; Kleyner, I.; Day, John H. (Technical Monitor)

2001-01-01

A single event upset (SEU)-hardened flip-flop has been designed and developed for antifuse Field Programmable Gate Array (FPGA) application. Design and application issues, testability, test methods, simulation, and results are discussed.

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

O'Bryan, Martha V.; Label, Kenneth A.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Lauenstein, Jean-Marie; Pellish, Jonathan A.; Ladbury, Raymond L.; Berg, Melanie D.

2015-01-01

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; OBryan, Martha V.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Pellish, Jonathan A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Ladbury, Raymond L.;

Initial Single Event Effects Testing of the Xilinx Virtex-4 Field Programmable Gate Array

NASA Technical Reports Server (NTRS)

Allen, Gregory R.; Swift, Gary M.; Carmichael, C.; Tseng, C.

2007-01-01

We present initial results for the thin epitaxial Xilinx Virtex-4 Fie ld Programmable Gate Array (FPGA), and compare to previous results ob tained for the Virtex-II and Virtex-II Pro. The data presented was a cquired through a consortium based effort with the common goal of pr oviding the space community with data and mitigation methods for the use of Xilinx FPGAs in space.

Real-time monitoring of single-photon detectors against eavesdropping in quantum key distribution systems.

PubMed

da Silva, Thiago Ferreira; Xavier, Guilherme B; Temporão, Guilherme P; von der Weid, Jean Pierre

2012-08-13

By employing real-time monitoring of single-photon avalanche photodiodes we demonstrate how two types of practical eavesdropping strategies, the after-gate and time-shift attacks, may be detected. Both attacks are identified with the detectors operating without any special modifications, making this proposal well suited for real-world applications. The monitoring system is based on accumulating statistics of the times between consecutive detection events, and extracting the afterpulse and overall efficiency of the detectors in real-time using mathematical models fit to the measured data. We are able to directly observe changes in the afterpulse probabilities generated from the after-gate and faint after-gate attacks, as well as different timing signatures in the time-shift attack. We also discuss the applicability of our scheme to other general blinding attacks.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Goldsman, N.; Liu, S.; Titus, J.; Ladbury, R. L.; Kim, H. S.; Phan, A. M.; Zafrani, M.; Sherman, P.

2011-01-01

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure is experimentally investigated.

Single Event Test Methodologies and System Error Rate Analysis for Triple Modular Redundant Field Programmable Gate Arrays

NASA Technical Reports Server (NTRS)

Allen, Gregory; Edmonds, Larry D.; Swift, Gary; Carmichael, Carl; Tseng, Chen Wei; Heldt, Kevin; Anderson, Scott Arlo; Coe, Michael

2010-01-01

We present a test methodology for estimating system error rates of Field Programmable Gate Arrays (FPGAs) mitigated with Triple Modular Redundancy (TMR). The test methodology is founded in a mathematical model, which is also presented. Accelerator data from 90 nm Xilins Military/Aerospace grade FPGA are shown to fit the model. Fault injection (FI) results are discussed and related to the test data. Design implementation and the corresponding impact of multiple bit upset (MBU) are also discussed.

Mitigating Upsets in SRAM Based FPGAs from the Xilinix Virtex 2 Family

NASA Technical Reports Server (NTRS)

Swift, Gary M.; Yui, Candice C.; Carmichael, Carl; Koga, Rocky; George, Jeffrey S.

2003-01-01

This slide presentation reviews the single event upset static testing of the Virtex II field programmable gate arrays (FPGA) that were tested in protons and heavy-ions. The test designs and static and dynamic test results are reviewed.

Normal myocardial perfusion scan portends a benign prognosis independent from the pretest probability of coronary artery disease. Sub-analysis of the J-ACCESS study.

PubMed

Imamura, Yosihiro; Fukuyama, Takaya; Nishimura, Sigeyuki; Nishimura, Tsunehiko

2009-08-01

We assessed the usefulness of gated stress/rest 99mTc-tetrofosmin myocardial perfusion single photon emission computed tomography (SPECT) to predict ischemic cardiac events in Japanese patients with various estimated pretest probabilities of coronary artery disease (CAD). Of the 4031 consecutively registered patients for a J-ACCESS (Japanese Assessment of Cardiac Events and Survival Study by Quantitative Gated SPECT) study, 1904 patients without prior cardiac events were selected. Gated stress/rest myocardial perfusion SPECT was performed and segmental perfusion scores and quantitative gated SPECT results were derived. The pretest probability for having CAD was estimated using the American College of Cardiology/American Heart Association/American College of Physicians-American Society of Internal Medicine guideline data for the management of patients with chronic stable angina, which includes age, gender, and type of chest discomfort. The patients were followed up for three years. During the three-year follow-up period, 96 developed ischemic cardiac events: 17 cardiac deaths, 8 nonfatal myocardial infarction, and 71 clinically driven revascularization. The summed stress score (SSS) was the most powerful independent predictor of all ischemic cardiac events (hazard ratio 1.077, CI 1.045-1.110). Abnormal SSS (> 3) was associated with a significantly higher cardiac event rate in patients with an intermediate to high pretest probability of CAD. Normal SSS (< or = 3) was associated with a low event rate in patients with any pretest probability of CAD. Myocardial perfusion SPECT is useful for further risk-stratification of patients with suspected CAD. The abnormal scan result (SSS > 3) is discriminative for subsequent cardiac events only in the groups with an intermediate to high pretest probability of CAD. The salient result is that normal scan results portend a benign prognosis independent from the pretest probability of CAD.

UWB dual burst transmit driver

DOEpatents

Dallum, Gregory E [Livermore, CA; Pratt, Garth C [Discovery Bay, CA; Haugen, Peter C [Livermore, CA; Zumstein, James M [Livermore, CA; Vigars, Mark L [Livermore, CA; Romero, Carlos E [Livermore, CA

2012-04-17

A dual burst transmitter for ultra-wideband (UWB) communication systems generates a pair of precisely spaced RF bursts from a single trigger event. An input trigger pulse produces two oscillator trigger pulses, an initial pulse and a delayed pulse, in a dual trigger generator. The two oscillator trigger pulses drive a gated RF burst (power output) oscillator. A bias driver circuit gates the RF output oscillator on and off and sets the RF burst packet width. The bias driver also level shifts the drive signal to the level that is required for the RF output device.

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, J. M.; Ladbury, R. L.; Batchelor, D. A.; Goldsman, N.; Kim, H. S.; Phan, A. M.

2010-01-01

A Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

Single Event Effects mitigation with TMRG tool

NASA Astrophysics Data System (ADS)

Kulis, S.

2017-01-01

Single Event Effects (SEE) are a major concern for integrated circuits exposed to radiation. There have been several techniques proposed to protect circuits against radiation-induced upsets. Among the others, the Triple Modular Redundancy (TMR) technique is one of the most popular. The purpose of the Triple Modular Redundancy Generator (TMRG) tool is to automatize the process of triplicating digital circuits freeing the designer from introducing the TMR code manually at the implementation stage. It helps to ensure that triplicated logic is maintained through the design process. Finally, the tool streamlines the process of introducing SEE in gate level simulations for final verification.

Summary of Research 2000: Department of Electrical and Computer Engineering

DTIC Science & Technology

2001-12-01

provides promising radiation hardening characteristics but the effect of microdose issues are not understood. As transistors shrink, trapping of small...examines the effects of enacting a microdose single event effect (SEE) upon a thick gate oxide of an SOI MOS capacitor in order to determine the degree

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

PubMed

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

NASA Technical Reports Server (NTRS)

Shuler, Robert L., Jr. (Inventor)

2002-01-01

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause the voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. The method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

NASA Technical Reports Server (NTRS)

Shuler, Robert L., Jr. (Inventor)

2002-01-01

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause tile voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. A method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.

SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

NASA Astrophysics Data System (ADS)

Tang, Zhaohuan; Fu, Xinghua; Yang, Fashun; Tan, Kaizhou; Ma, Kui; Wu, Xue; Lin, Jiexing

2017-12-01

Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs. Project supported by the National Natural Science Foundation of China (No. 61464002), the Grand Science and Technology Special Project in Guizhou Province of China (No. [2015]6006), and the Ministry of Education Open Foundation for Semiconductor Power Device Reliability (No. 010201).

Left ventricular energy model predicts adverse events in women with suspected myocardial ischemia: results from the NHLBI-sponsored women’s ischemia syndrome evaluation (WISE) study

PubMed Central

Weinberg, Nicole; Pohost, Gerald M.; Bairey Merz, C. Noel; Shaw, Leslee J.; Sopko, George; Fuisz, Anthon; Rogers, William J.; Walsh, Edward G.; Johnson, B. Delia; Sharaf, Barry L.; Pepine, Carl J.; Mankad, Sunil; Reis, Steven E.; Rayarao, Geetha; Vido, Diane A.; Bittner, Vera; Tauxe, Lindsey; Olson, Marian B.; Kelsey, Sheryl F.; Biederman, Robert WW

2013-01-01

Objectives To assess the prognostic value of a left ventricular energy-model in women with suspected myocardial ischemia. Background The prognostic value of internal energy utilization (IEU) of the left ventricle in women with suspected myocardial ischemia is unknown. Methods Women [n=227, mean age 59±12 years (range, 31-86 years)], with symptoms of myocardial ischemia, underwent myocardial perfusion imaging (MPI) assessment for regional perfusion defects along with measurement of ventricular volumes separately by gated Single Photon Emission Computed Tomography (SPECT) (n=207) and magnetic resonance imaging (MRI) (n=203). During follow-up (40±17 months), time to first major adverse cardiovascular event (MACE, death, myocardial infarction or hospitalization for congestive heart failure) was analyzed using MRI and gated SPECT variables. Results Adverse events occurred in 31 (14%). Multivariable Cox models were formed for each modality: IEU and wall thickness by MRI (Chi-squared 34, P<0.005) and IEU and systolic blood pressure by gated SEPCT (Chi-squared 34, P<0.005). The models remained predictive after adjustment for age, disease history and Framingham risk score. For each Cox model, patients were categorized as high-risk if the model hazard was positive and not high-risk otherwise. Kaplan-Meier analysis of time to MACE was performed for high-risk vs. not high-risk for MR (log rank 25.3, P<0.001) and gated SEPCT (log rank 18.2, P<0.001) models. Conclusions Among women with suspected myocardial ischemia a high internal energy utilization has higher prognostic value than either a low EF or the presence of a myocardial perfusion defect assessed using two independent modalities of MR or gated SPECT. PMID:24015377

Silicon Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan; Campola, Michael; Ladbury, Raymond; Label, Kenneth; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

Development of a Low-Cost and High-speed Single Event Effects Testers based on Reconfigurable Field Programmable Gate Arrays (FPGA)

NASA Technical Reports Server (NTRS)

Howard, J. W.; Kim, H.; Berg, M.; LaBel, K. A.; Stansberry, S.; Friendlich, M.; Irwin, T.

2006-01-01

A viewgraph presentation on the development of a low cost, high speed tester reconfigurable Field Programmable Gata Array (FPGA) is shown. The topics include: 1) Introduction; 2) Objectives; 3) Tester Descriptions; 4) Tester Validations and Demonstrations; 5) Future Work; and 6) Summary.

An Analysis of Heavy-Ion Single Event Effects for a Variety of Finite State-Machine Mitigation Strategies

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; Label, Kenneth A.; Kim, Hak; Phan, Anthony; Seidleck, Christina

2014-01-01

Finite state-machines (FSMs) are used to control operational flow in application specific integrated circuits (ASICs) and field programmable gate array (FPGA) devices. Because of their ease of interpretation, FSMs simplify the design and verification process and consequently are significant components in a synchronous design.

Radiation-Tolerant Intelligent Memory Stack - RTIMS

NASA Technical Reports Server (NTRS)

Ng, Tak-kwong; Herath, Jeffrey A.

2011-01-01

This innovation provides reconfigurable circuitry and 2-Gb of error-corrected or 1-Gb of triple-redundant digital memory in a small package. RTIMS uses circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field-programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuits are stacked into a module of 42.7 42.7 13 mm. Triple module redundancy, current limiting, configuration scrubbing, and single- event function interrupt detection are employed to mitigate radiation effects. The novel self-scrubbing and single event functional interrupt (SEFI) detection allows a relatively soft FPGA to become radiation tolerant without external scrubbing and monitoring hardware

Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

NASA Technical Reports Server (NTRS)

Allen, Gregory R.; Swift, Gary M.

2006-01-01

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

NASA Astrophysics Data System (ADS)

Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

The Effectiveness of TAG or Guard-Gates in SET Suppression Using Delay and Dual-Rail Configurations at 0.35 microns

NASA Technical Reports Server (NTRS)

Shuler, Robert L.; Balasubramanian, Anupama; Narasimham, Balaji; Bhuva, Bharat; O'Neill, Patrick M.; Kouba, Coy

2006-01-01

Design options for decreasing the susceptibility of integrated circuits to Single Event Upset (SEU) fall into two categories: (1) increasing the critical charge to cause an upset at a particular node, and (2) employing redundancy to mask or correct errors. With decreasing device sizes on an Integrated Circuit (IC), the amount of charge required to represent a logic state has steadily reduced. Critical charge methods such as increasing drive strength or increasing the time required to change state as in capacitive or resistive hardening or delay based approaches extract a steadily increasing penalty as a percentage of device resources and performance. Dual redundancy is commonly assumed only to provide error detection with Triple Modular Redundancy (TMR) required for correction, but less well known methods employ dual redundancy to achieve full error correction by voting two inputs with a prior state to resolve ambiguity. This requires special circuits such as the Whitaker latch [1], or the guard-gate [2] which some of us have called a Transition AND Gate (TAG) [3]. A 2-input guard gate is shown in Figure 1. It is similar to a Muller Completion Element [4] and relies on capacitance at node "out" to retain the prior state when inputs disagree, while eliminating any output buffer which would be susceptible to radiation strikes. This paper experimentally compares delay based and dual rail flip-flop designs wherein both types of circuits employ guard-gates to optimize layout and performance, and draws conclusions about design criteria and suitability of each option. In both cases a design goal is protection against Single Event Transients (SET) in combinational logic as well as SEU in the storage elements. For the delay based design, it is also a goal to allow asynchronous clear or preset inputs on the storage elements, which are often not available in radiation tolerant designs.

NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

Speed and Cardiac Recovery Variables Predict the Probability of Elimination in Equine Endurance Events

PubMed Central

Younes, Mohamed; Robert, Céline; Cottin, François; Barrey, Eric

2015-01-01

Nearly 50% of the horses participating in endurance events are eliminated at a veterinary examination (a vet gate). Detecting unfit horses before a health problem occurs and treatment is required is a challenge for veterinarians but is essential for improving equine welfare. We hypothesized that it would be possible to detect unfit horses earlier in the event by measuring heart rate recovery variables. Hence, the objective of the present study was to compute logistic regressions of heart rate, cardiac recovery time and average speed data recorded at the previous vet gate (n-1) and thus predict the probability of elimination during successive phases (n and following) in endurance events. Speed and heart rate data were extracted from an electronic database of endurance events (80–160 km in length) organized in four countries. Overall, 39% of the horses that started an event were eliminated—mostly due to lameness (64%) or metabolic disorders (15%). For each vet gate, logistic regressions of explanatory variables (average speed, cardiac recovery time and heart rate measured at the previous vet gate) and categorical variables (age and/or event distance) were computed to estimate the probability of elimination. The predictive logistic regressions for vet gates 2 to 5 correctly classified between 62% and 86% of the eliminated horses. The robustness of these results was confirmed by high areas under the receiving operating characteristic curves (0.68–0.84). Overall, a horse has a 70% chance of being eliminated at the next gate if its cardiac recovery time is longer than 11 min at vet gate 1 or 2, or longer than 13 min at vet gates 3 or 4. Heart rate recovery and average speed variables measured at the previous vet gate(s) enabled us to predict elimination at the following vet gate. These variables should be checked at each veterinary examination, in order to detect unfit horses as early as possible. Our predictive method may help to improve equine welfare and ethical considerations in endurance events. PMID:26322506

Speed and Cardiac Recovery Variables Predict the Probability of Elimination in Equine Endurance Events.

PubMed

Younes, Mohamed; Robert, Céline; Cottin, François; Barrey, Eric

2015-01-01

Nearly 50% of the horses participating in endurance events are eliminated at a veterinary examination (a vet gate). Detecting unfit horses before a health problem occurs and treatment is required is a challenge for veterinarians but is essential for improving equine welfare. We hypothesized that it would be possible to detect unfit horses earlier in the event by measuring heart rate recovery variables. Hence, the objective of the present study was to compute logistic regressions of heart rate, cardiac recovery time and average speed data recorded at the previous vet gate (n-1) and thus predict the probability of elimination during successive phases (n and following) in endurance events. Speed and heart rate data were extracted from an electronic database of endurance events (80-160 km in length) organized in four countries. Overall, 39% of the horses that started an event were eliminated--mostly due to lameness (64%) or metabolic disorders (15%). For each vet gate, logistic regressions of explanatory variables (average speed, cardiac recovery time and heart rate measured at the previous vet gate) and categorical variables (age and/or event distance) were computed to estimate the probability of elimination. The predictive logistic regressions for vet gates 2 to 5 correctly classified between 62% and 86% of the eliminated horses. The robustness of these results was confirmed by high areas under the receiving operating characteristic curves (0.68-0.84). Overall, a horse has a 70% chance of being eliminated at the next gate if its cardiac recovery time is longer than 11 min at vet gate 1 or 2, or longer than 13 min at vet gates 3 or 4. Heart rate recovery and average speed variables measured at the previous vet gate(s) enabled us to predict elimination at the following vet gate. These variables should be checked at each veterinary examination, in order to detect unfit horses as early as possible. Our predictive method may help to improve equine welfare and ethical considerations in endurance events.

Quantum Logic with Cavity Photons From Single Atoms.

PubMed

Holleczek, Annemarie; Barter, Oliver; Rubenok, Allison; Dilley, Jerome; Nisbet-Jones, Peter B R; Langfahl-Klabes, Gunnar; Marshall, Graham D; Sparrow, Chris; O'Brien, Jeremy L; Poulios, Konstantinos; Kuhn, Axel; Matthews, Jonathan C F

2016-07-08

We demonstrate quantum logic using narrow linewidth photons that are produced with an a priori nonprobabilistic scheme from a single ^{87}Rb atom strongly coupled to a high-finesse cavity. We use a controlled-not gate integrated into a photonic chip to entangle these photons, and we observe nonclassical correlations between photon detection events separated by periods exceeding the travel time across the chip by 3 orders of magnitude. This enables quantum technology that will use the properties of both narrow-band single photon sources and integrated quantum photonics.

Defect-sensitivity analysis of an SEU immune CMOS logic family

NASA Technical Reports Server (NTRS)

Ingermann, Erik H.; Frenzel, James F.

1992-01-01

Fault testing of resistive manufacturing defects is done on a recently developed single event upset immune logic family. Resistive ranges and delay times are compared with those of traditional CMOS logic. Reaction of the logic to these defects is observed for a NOR gate, and an evaluation of its ability to cope with them is determined.

Using Classical Reliability Models and Single Event Upset (SEU) Data to Determine Optimum Implementation Schemes for Triple Modular Redundancy (TMR) in SRAM-Based Field Programmable Gate Array (FPGA) Devices

NASA Technical Reports Server (NTRS)

Berg, M.; Kim, H.; Phan, A.; Seidleck, C.; LaBel, K.; Pellish, J.; Campola, M.

2015-01-01

Space applications are complex systems that require intricate trade analyses for optimum implementations. We focus on a subset of the trade process, using classical reliability theory and SEU data, to illustrate appropriate TMR scheme selection.

Recent Radiation Test Results for Trench Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak S.; Topper, Alyson D.; Ladbury, Raymond L.; Label, Kenneth A.

2017-01-01

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Redundant single event upset supression system

DOEpatents

Hoff, James R.

2006-04-04

CMOS transistors are configured to operate as either a redundant, SEU-tolerant, positive-logic, cross-coupled Nor Gate SR-flip flop or a redundant, SEU-tolerant, negative-logic, cross-coupled Nand Gate SR-flip flop. The register can operate as a memory, and further as a memory that can overcome the effects of radiation. As an SR-flip flop, the invention can be altered into any known type of latch or flip-flop by the application of external logic, thereby extending radiation tolerance to devices previously incapable of radiation tolerance. Numerous registers can be logically connected and replicated thereby being electronically configured to operate as a redundant circuit.

Single-Event Upset Characterization of Common First- and Second-Order All-Digital Phase-Locked Loops

NASA Astrophysics Data System (ADS)

Chen, Y. P.; Massengill, L. W.; Kauppila, J. S.; Bhuva, B. L.; Holman, W. T.; Loveless, T. D.

2017-08-01

The single-event upset (SEU) vulnerability of common first- and second-order all-digital-phase-locked loops (ADPLLs) is investigated through field-programmable gate array-based fault injection experiments. SEUs in the highest order pole of the loop filter and fraction-based phase detectors (PDs) may result in the worst case error response, i.e., limit cycle errors, often requiring system restart. SEUs in integer-based linear PDs may result in loss-of-lock errors, while SEUs in bang-bang PDs only result in temporary-frequency errors. ADPLLs with the same frequency tuning range but fewer bits in the control word exhibit better overall SEU performance.

A two-qubit logic gate in silicon.

PubMed

Veldhorst, M; Yang, C H; Hwang, J C C; Huang, W; Dehollain, J P; Muhonen, J T; Simmons, S; Laucht, A; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

2015-10-15

Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puczkarski, Paweł; Gehring, Pascal, E-mail: pascal.gehring@materials.ox.ac.uk; Lau, Chit S.

2015-09-28

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

Field Programmable Gate Aray (FPGA) Radiation Data: All Data is Not Equal

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Berg, Melanie D.

2016-01-01

Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks based on single particle event radiation testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means to FPGAs. Its all about understanding actual risks and not making assumptions.

Technology, design, simulation, and evaluation for SEP-hardened circuits

NASA Technical Reports Server (NTRS)

Adams, J. R.; Allred, D.; Barry, M.; Rudeck, P.; Woodruff, R.; Hoekstra, J.; Gardner, H.

1991-01-01

This paper describes the technology, design, simulation, and evaluation for improvement of the Single Event Phenomena (SEP) hardness of gate-array and SRAM cells. Through the use of design and processing techniques, it is possible to achieve an SEP error rate less than 1.0 x 10(exp -10) errors/bit-day for a 9O percent worst-case geosynchronous orbit environment.

On the reliable probing of discrete ‘plasma bullet’ propagation

NASA Astrophysics Data System (ADS)

Svarnas, P.; Gazeli, K.; Gkelios, A.; Amanatides, E.; Mataras, D.

2018-04-01

This report is devoted to the imaging of the spatiotemporal evolution of ‘plasma bullets’ during their propagation at atmospheric pressure. Although numerous studies have been realized on this topic with high gating rate cameras, triggering issues and statistical analyses of single-shot events over different cycles of the driving high voltage have not been discussed properly. The present work demonstrates the related difficulties faced due to the inherently erratic propagation of the bullets. A way of capturing and statistically analysing discrete bullet events is introduced, which is reliable even when low gating rate cameras are used and multiple bullets are formed within the voltage cycle. The method is based on plasma observations by means of two photoelectron multiplier tubes. It is suggested that these signals correlate better with bullet propagation events than the driving voltage or bullet current waveforms do, and allow either the elimination of issues arising from erratic propagation and hardware delays or at least the quantification of certain uncertainties. Herein, the entire setup, the related concept and the limits of accuracy are discussed in detail. Snapshots of the bullets are captured and commented on, with the bullets being produced by a sinusoidally driven single-electrode plasma jet reactor operating with helium. Finally, the instantaneous velocities of bullets on the order of 104-105 m s-1 are measured and propagation phases are distinguished in good agreement with the bibliography.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

A universal pathway for kinesin stepping.

PubMed

Clancy, Bason E; Behnke-Parks, William M; Andreasson, Johan O L; Rosenfeld, Steven S; Block, Steven M

2011-08-14

Kinesin-1 is an ATP-driven, processive motor that transports cargo along microtubules in a tightly regulated stepping cycle. Efficient gating mechanisms ensure that the sequence of kinetic events proceeds in the proper order, generating a large number of successive reaction cycles. To study gating, we created two mutant constructs with extended neck-linkers and measured their properties using single-molecule optical trapping and ensemble fluorescence techniques. Owing to a reduction in the inter-head tension, the constructs access an otherwise rarely populated conformational state in which both motor heads remain bound to the microtubule. ATP-dependent, processive backstepping and futile hydrolysis were observed under moderate hindering loads. On the basis of measurements, we formulated a comprehensive model for kinesin motion that incorporates reaction pathways for both forward and backward stepping. In addition to inter-head tension, we found that neck-linker orientation is also responsible for ensuring gating in kinesin.

Report on the formal specification and partial verification of the VIPER microprocessor

NASA Technical Reports Server (NTRS)

Brock, Bishop; Hunt, Warren A., Jr.

1991-01-01

The VIPER microprocessor chip is partitioned into four levels of abstractions. At the highest level, VIPER is described with decreasingly abstract sets of functions in LCF-LSM. At the lowest level are the gate-level models in proprietary CAD languages. The block-level and gate-level specifications are also given in the ELLA simulation language. Among VIPER's deficiencies are the fact that there is no notion of external events in the top-level specification, and it is impossible to use the top-level specifications to prove abstract properties of programs running on VIPER computers. There is no complete proof that the gate-level specifications implement the top-level specifications. Cohn's proof that the major-state machine correctly implements the top-level specifications has no formal connection with any of the other proof attempts. None of the latter address resetting the machine, memory timeout, forced error, or single step modes.

An SEU immune logic family

NASA Technical Reports Server (NTRS)

Canaris, J.

1991-01-01

A new logic family, which is immune to single event upsets, is described. Members of the logic family are capable of recovery, regardless of the shape of the upsetting event. Glitch propagation from an upset node is also blocked. Logic diagrams for an Inverter, Nor, Nand, and Complex Gates are provided. The logic family can be implemented in a standard, commercial CMOS process with no additional masks. DC, transient, static power, upset recovery and layout characteristics of the new family, based on a commercial 1 micron CMOS N-Well process, are described.

Universal quantum gates for Single Cooper Pair Box based quantum computing

NASA Technical Reports Server (NTRS)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

Single Event Effects Test Results for the Actel ProASIC Plus and Altera Stratix-II Field Programmable Gate Arrays

NASA Technical Reports Server (NTRS)

Allen, Gregory R.; Swift, Gary M.

2006-01-01

This work describes radiation testing of Actel's ProASIC Plus and Altera's Stratix-II FPGAs. The Actel Device Under Test (DUT) was a ProASIC Plus APA300-PQ208 nonvolatile, field reprogrammable device which is based on a 0.22micron flash-based LVCMOS technology. Limited investigation has taken place into flash based FPGA technologies, therefore this test served as a preliminary reference point for various SEE behaviors. The Altera DUT was a Stratix-II EP2S60F1020C4. Single Event Upset (SEU) and Single Event Latchup (SEL) were the focus of these studies. For the Actel, a latchup test was done at an effective LET of 75.0 MeV-sq cm/mg at room temperature, and no latchup was detected when irradiated to a total fluence of 1 x 10(exp 7) particles/sq cm. The Altera part was shown to latchup at room temperature.

Influence of emotional states on inhibitory gating: Animals models to clinical neurophysiology

PubMed Central

Cromwell, Howard C.; Atchley, Rachel M.

2014-01-01

Integrating research efforts using a cross-domain approach could redefine traditional constructs used in behavioral and clinical neuroscience by demonstrating that behavior and mental processes arise not from functional isolation but from integration. Our research group has been examining the interface between cognitive and emotional processes by studying inhibitory gating. Inhibitory gating can be measured via changes in behavior or neural signal processing. Sensorimotor gating of the startle response is a well-used measure. To study how emotion and cognition interact during startle modulation in the animal model, we examined ultrasonic vocalization (USV) emissions during acoustic startle and prepulse inhibition. We found high rates of USV emission during the sensorimotor gating paradigm and revealed links between prepulse inhibition (PPI) and USV emission that could reflect emotional and cognitive influences. Measuring inhibitory gating as P50 event-related potential suppression has also revealed possible connections between emotional states and cognitive processes. We have examined the single unit responses during the traditional gating paradigm and found that acute and chronic stress can alter gating of neural signals in regions such as amygdala, striatum and medial prefrontal cortex. Our findings point to the need for more cross-domain research on how shifting states of emotion can impact basic mechanisms of information processing. Results could inform clinical work with the development of tools that depend upon cross-domain communication, and enable a better understanding and evaluation of psychological impairment. PMID:24861710

A random access memory immune to single event upset using a T-Resistor

DOEpatents

Ochoa, A. Jr.

1987-10-28

In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

Random access memory immune to single event upset using a T-resistor

DOEpatents

Ochoa, Jr., Agustin

1989-01-01

In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

Middle Devonian to Early Carboniferous event stratigraphy of Devils Gate and Northern Antelope Range sections, Nevada, U.S.A

USGS Publications Warehouse

Sandberg, C.A.; Morrow, J.R.; Poole, F.G.; Ziegler, W.

2003-01-01

The classic type section of the Devils Gate Limestone at Devils Gate Pass is situated on the eastern slope of a proto-Antler forebulge that resulted from convergence of the west side of the North American continent with an ocean plate. The original Late Devonian forebulge, the site of which is now located between Devils Gate Pass and the Northern Antelope Range, separated the continental-rise to deep-slope Woodruff basin on the west from the backbulge Pilot basin on the east. Two connections between these basins are recorded by deeper water siltstone beds at Devils Gate; the older one is the lower tongue of the Woodruff Formation, which forms the basal unit of the upper member of the type Devils Gate, and the upper one is the overlying, thin lower member of the Pilot Shale. The forebulge and the backbulge Pilot basin originated during the middle Frasnian (early Late Devonian) Early hassi Zone, shortly following the Alamo Impact within the punctata Zone in southern Nevada. Evidence of this impact is recorded by coeval and reworked shocked quartz grains in the Northern Antelope Range and possibly by a unique bypass-channel or megatsunami-uprush sandy diamictite within carbonate-platform rocks of the lower member of the type Devils Gate Limestone. Besides the Alamo Impact and three regional events, two other important global events are recorded in the Devils Gate section. The semichatovae eustatic rise, the maximum Late Devonian flooding event, coincides with the sharp lithogenetic change at the discordant boundary above the lower member of the Devils Gate Limestone. Most significantly, the Devils Gate section contains the thickest and most complete rock record in North America across the late Frasnian linguiformis Zone mass extinction event. Excellent exposures include not only the extinction shale, but also a younger. Early triangularis Zone tsunamite breccia, produced by global collapse of carbonate platforms during a shallowing event that continued into the next younger Famennian Stage. The Northern Antelope Range section is located near the top of the west side of the proto-Antler forebulge. Because of its unusual, tectonically active location, unmatched at any other Nevada localities, this section records only four regional and global events during a timespan slightly longer than that of the Devils Gate section. The global semichatovae rise and late Frasnian mass extinction event are largely masked because of the depositional complexities resulting from this location.

Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

NASA Astrophysics Data System (ADS)

Cho, Won-Ju; Ahn, Min-Ju

2017-09-01

In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

PubMed

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Design Tools for Reconfigurable Hardware in Orbit (RHinO)

NASA Technical Reports Server (NTRS)

French, Mathew; Graham, Paul; Wirthlin, Michael; Larchev, Gregory; Bellows, Peter; Schott, Brian

2004-01-01

The Reconfigurable Hardware in Orbit (RHinO) project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. These tools leverage an established FPGA design environment and focus primarily on space effects mitigation and power optimization. The project is creating software to automatically test and evaluate the single-event-upsets (SEUs) sensitivities of an FPGA design and insert mitigation techniques. Extensions into the tool suite will also allow evolvable algorithm techniques to reconfigure around single-event-latchup (SEL) events. In the power domain, tools are being created for dynamic power visualiization and optimization. Thus, this technology seeks to enable the use of Reconfigurable Hardware in Orbit, via an integrated design tool-suite aiming to reduce risk, cost, and design time of multimission reconfigurable space processors using SRAM-based FPGAs.

Quasi-specific access of the potassium channel inactivation gate

PubMed Central

Venkataraman, Gaurav; Srikumar, Deepa; Holmgren, Miguel

2014-01-01

Many voltage-gated potassium channels open in response to membrane depolarization and then inactivate within milliseconds. Neurons use these channels to tune their excitability. In Shaker K+ channels, inactivation is caused by the cytoplasmic amino terminus, termed the inactivation gate. Despite having four such gates, inactivation is caused by the movement of a single gate into a position that occludes ion permeation. The pathway that this single inactivation gate takes into its inactivating position remains unknown. Here we show that a single gate threads through the intracellular entryway of its own subunit, but the tip of the gate has sufficient freedom to interact with all four subunits deep in the pore, and does so with equal probability. This pathway demonstrates that flexibility afforded by the inactivation peptide segment at the tip of the N-terminus is used to mediate function. PMID:24909510

Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

NASA Astrophysics Data System (ADS)

Verma, Madhulika; Sharma, Dheeraj; Pandey, Sunil; Nigam, Kaushal; Kondekar, P. N.

2017-01-01

In this work, we perform a comparative analysis between single and dual metal dielectrically modulated tunnel field-effect transistors (DMTFETs) for the application of label free biosensor. For this purpose, two different gate material with work-function as ϕM 1 and ϕM 2 are used in short-gate DMTFET, where ϕM 1 represents the work-function of gate M1 near to the drain end, while ϕM 2 denotes the work-function of gate M2 near to the source end. A nanogap cavity in the gate dielectric is formed by removing the selected portion of gate oxide for sensing the biomolecules. To investigate the sensitivity of these biosensors, dielectric constant and charge density within the cavity region are considered as governing parameters. The work-function of gate M2 is optimized and considered less than M1 to achieve abruptness at the source/channel junction, which results in better tunneling and improved ON-state current. The ATLAS device simulations show that dual metal SG-DMTFETs attains higher ON-state current and drain current sensitivity as compared to its counterpart device. Finally, a dual metal short-gate (DSG) biosensor is compared with the single metal short-gate (SG), single metal full-gate (FG), and dual metal full-gate (DFG) biosensors to analyse structurally enhanced conjugation effect on gate-channel coupling.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Goldsman, Neil; Liu, Sandra; Titus, Jeffrey L.; Ladbury, Raymond L.; Kim, Hak S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, Max; Sherman, Phillip

2012-01-01

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

An Integrated Gate Turnaround Management Concept Leveraging Big Data/Analytics for NAS Performance Improvements

NASA Technical Reports Server (NTRS)

Chung, William; Chachad, Girish; Hochstetler, Ronald

2016-01-01

The Integrated Gate Turnaround Management (IGTM) concept was developed to improve the gate turnaround performance at the airport by leveraging relevant historical data to support optimization of airport gate operations, which include: taxi to the gate, gate services, push back, taxi to the runway, and takeoff, based on available resources, constraints, and uncertainties. By analyzing events of gate operations, primary performance dependent attributes of these events were identified for the historical data analysis such that performance models can be developed based on uncertainties to support descriptive, predictive, and prescriptive functions. A system architecture was developed to examine system requirements in support of such a concept. An IGTM prototype was developed to demonstrate the concept using a distributed network and collaborative decision tools for stakeholders to meet on time pushback performance under uncertainties.

Hierarchical Address Event Routing for Reconfigurable Large-Scale Neuromorphic Systems.

PubMed

Park, Jongkil; Yu, Theodore; Joshi, Siddharth; Maier, Christoph; Cauwenberghs, Gert

2017-10-01

We present a hierarchical address-event routing (HiAER) architecture for scalable communication of neural and synaptic spike events between neuromorphic processors, implemented with five Xilinx Spartan-6 field-programmable gate arrays and four custom analog neuromophic integrated circuits serving 262k neurons and 262M synapses. The architecture extends the single-bus address-event representation protocol to a hierarchy of multiple nested buses, routing events across increasing scales of spatial distance. The HiAER protocol provides individually programmable axonal delay in addition to strength for each synapse, lending itself toward biologically plausible neural network architectures, and scales across a range of hierarchies suitable for multichip and multiboard systems in reconfigurable large-scale neuromorphic systems. We show approximately linear scaling of net global synaptic event throughput with number of routing nodes in the network, at 3.6×10 7 synaptic events per second per 16k-neuron node in the hierarchy.

How to resolve microsecond current fluctuations in single ion channels: The power of beta distributions

PubMed Central

Schroeder, Indra

2015-01-01

Abstract A main ingredient for the understanding of structure/function correlates of ion channels is the quantitative description of single-channel gating and conductance. However, a wealth of information provided from fast current fluctuations beyond the temporal resolution of the recording system is often ignored, even though it is close to the time window accessible to molecular dynamics simulations. This kind of current fluctuations provide a special technical challenge, because individual opening/closing or blocking/unblocking events cannot be resolved, and the resulting averaging over undetected events decreases the single-channel current. Here, I briefly summarize the history of fast-current fluctuation analysis and focus on the so-called “beta distributions.” This tool exploits characteristics of current fluctuation-induced excess noise on the current amplitude histograms to reconstruct the true single-channel current and kinetic parameters. A guideline for the analysis and recent applications demonstrate that a construction of theoretical beta distributions by Markov Model simulations offers maximum flexibility as compared to analytical solutions. PMID:26368656

Infrared laser dissociation of single megadalton polymer ions in a gated electrostatic ion trap: the added value of statistical analysis of individual events.

PubMed

Halim, Mohammad A; Clavier, Christian; Dagany, Xavier; Kerleroux, Michel; Dugourd, Philippe; Dunbar, Robert C; Antoine, Rodolphe

2018-05-07

In this study, we report the unimolecular dissociation mechanism of megadalton SO 3 -containing poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS) polymer cations and anions with the aid of infrared multiphoton dissociation coupled to charge detection ion trap mass spectrometry. A gated electrostatic ion trap ("Benner trap") is used to store and detect single gaseous polymer ions generated by positive and negative polarity in an electrospray ionization source. The trapped ions are then fragmented due to the sequential absorption of multiple infrared photons produced from a continuous-wave CO 2 laser. Several fragmentation pathways having distinct signatures are observed. Highly charged parent ions characteristically adopt a distinctive "stair-case" pattern (assigned to the "fission" process) whereas low charge species take on a "funnel like" shape (assigned to the "evaporation" process). Also, the log-log plot of the dissociation rate constants as a function of laser intensity between PAMPS positive and negative ions is significantly different.

Universal quantum gate set approaching fault-tolerant thresholds with superconducting qubits.

PubMed

Chow, Jerry M; Gambetta, Jay M; Córcoles, A D; Merkel, Seth T; Smolin, John A; Rigetti, Chad; Poletto, S; Keefe, George A; Rothwell, Mary B; Rozen, J R; Ketchen, Mark B; Steffen, M

2012-08-10

We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, including those for Clifford group generators, single-qubit π/4 and π/8 rotations, and a two-qubit controlled-not, exceed 95% (98%), without (with) subtracting state preparation and measurement errors. Furthermore, we introduce a process map representation in the Pauli basis which is visually efficient and informative. This high-fidelity gate set serves as a critical building block towards scalable architectures of superconducting qubits for error correction schemes and pushes up on the known limits of quantum gate characterization.

Universal Quantum Gate Set Approaching Fault-Tolerant Thresholds with Superconducting Qubits

NASA Astrophysics Data System (ADS)

Chow, Jerry M.; Gambetta, Jay M.; Córcoles, A. D.; Merkel, Seth T.; Smolin, John A.; Rigetti, Chad; Poletto, S.; Keefe, George A.; Rothwell, Mary B.; Rozen, J. R.; Ketchen, Mark B.; Steffen, M.

2012-08-01

We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, including those for Clifford group generators, single-qubit π/4 and π/8 rotations, and a two-qubit controlled-not, exceed 95% (98%), without (with) subtracting state preparation and measurement errors. Furthermore, we introduce a process map representation in the Pauli basis which is visually efficient and informative. This high-fidelity gate set serves as a critical building block towards scalable architectures of superconducting qubits for error correction schemes and pushes up on the known limits of quantum gate characterization.

Quantum design rules for single molecule logic gates.

PubMed

Renaud, N; Hliwa, M; Joachim, C

2011-08-28

Recent publications have demonstrated how to implement a NOR logic gate with a single molecule using its interaction with two surface atoms as logical inputs [W. Soe et al., ACS Nano, 2011, 5, 1436]. We demonstrate here how this NOR logic gate belongs to the general family of quantum logic gates where the Boolean truth table results from a full control of the quantum trajectory of the electron transfer process through the molecule by very local and classical inputs practiced on the molecule. A new molecule OR gate is proposed for the logical inputs to be also single metal atoms, one per logical input.

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Suhail, Mohammed; Kuhn, Peter; Prinz, Erwin; Kim, Hak; LaBel, Kenneth A.

2004-01-01

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Non-radiation hardened microprocessors in space-based remote sensing systems

NASA Astrophysics Data System (ADS)

DeCoursey, R.; Melton, Ryan; Estes, Robert R., Jr.

2006-09-01

The CALIPSO (Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observations) mission is a comprehensive suite of active and passive sensors including a 20Hz 230mj Nd:YAG lidar, a visible wavelength Earth-looking camera and an imaging infrared radiometer. CALIPSO flies in formation with the Earth Observing System Post-Meridian (EOS PM) train, provides continuous, near-simultaneous measurements and is a planned 3 year mission. CALIPSO was launched into a 98 degree sun synchronous Earth orbit in April of 2006 to study clouds and aerosols and acquires over 5 gigabytes of data every 24 hours. Figure 1 shows the ground track of one CALIPSO orbit as well as high and low intensity South Atlantic Anomaly outlines. CALIPSO passes through the SAA several times each day. Spaced based remote sensing systems that include multiple instruments and/or instruments such as lidar generate large volumes of data and require robust real-time hardware and software mechanisms and high throughput processors. Due to onboard storage restrictions and telemetry downlink limitations these systems must pre-process and reduce the data before sending it to the ground. This onboard processing and realtime requirement load may mean that newer more powerful processors are needed even though acceptable radiation-hardened versions have not yet been released. CALIPSO's single board computer payload controller processor is actually a set of four (4) voting non-radiation hardened COTS Power PC 603r's built on a single width VME card by General Dynamics Advanced Information Systems (GDAIS). Significant radiation concerns for CALIPSO and other Low Earth Orbit (LEO) satellites include the South Atlantic Anomaly (SAA), the north and south poles and strong solar events. Over much of South America and extending into the South Atlantic Ocean (see figure 1) the Van Allen radiation belts dip to just 200-800km and spacecraft entering this area are subjected to high energy protons and experience higher than normal Single Event Upset (SEU) and Single Event Latch-up (SEL) rates. Although less significant, spacecraft flying in the area around the poles experience similar upsets. Finally, powerful solar proton events in the range of 10MeV/10pfu to 100MeV/1pfu as are forecasted and tracked by NOAA's Space Environment Center in Colorado can result in SingleEvent Upset (SEU), Single Event Latch-up (SEL) and permanent failures such as Single Event Gate Rupture (SEGR) in some technologies. (Galactic Cosmic Rays (GCRs) are another source, especially for gate rupture) CALIPSO mitigates common radiation concerns in its data handling through the use of redundant processors, radiation-hardened Application Specific Integrated Circuits (ASIC), hardware-based Error Detection and Correction (EDAC), processor and memory scrubbing, redundant boot code and mirrored files. After presenting a system overview this paper will expand on each of these strategies. Where applicable, related on-orbit data collected since the CALIPSO initial boot on May 4, 2006 will be noted.

Non Radiation Hardened Microprocessors in Spaced Based Remote Sensing Systems

NASA Technical Reports Server (NTRS)

Decoursey, Robert J.; Estes, Robert F.; Melton, Ryan

2006-01-01

The CALIPSO (Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observations) mission is a comprehensive suite of active and passive sensors including a 20Hz 230mj Nd:YAG lidar, a visible wavelength Earth-looking camera and an imaging infrared radiometer. CALIPSO flies in formation with the Earth Observing System Post-Meridian (EOS PM) train, provides continuous, near-simultaneous measurements and is a planned 3 year mission. CALIPSO was launched into a 98 degree sun synchronous Earth orbit in April of 2006 to study clouds and aerosols and acquires over 5 gigabytes of data every 24 hours. The ground track of one CALIPSO orbit as well as high and low intensity South Atlantic Anomaly outlines is shown. CALIPSO passes through the SAA several times each day. Spaced based remote sensing systems that include multiple instruments and/or instruments such as lidar generate large volumes of data and require robust real-time hardware and software mechanisms and high throughput processors. Due to onboard storage restrictions and telemetry downlink limitations these systems must pre-process and reduce the data before sending it to the ground. This onboard processing and realtime requirement load may mean that newer more powerful processors are needed even though acceptable radiation-hardened versions have not yet been released. CALIPSO's single board computer payload controller processor is actually a set of four (4) voting non-radiation hardened COTS Power PC 603r's built on a single width VME card by General Dynamics Advanced Information Systems (GDAIS). Significant radiation concerns for CALIPSO and other Low Earth Orbit (LEO) satellites include the South Atlantic Anomaly (SAA), the north and south poles and strong solar events. Over much of South America and extending into the South Atlantic Ocean the Van Allen radiation belts dip to just 200-800km and spacecraft entering this area are subjected to high energy protons and experience higher than normal Single Event Upset (SEU) and Single Event Latch-up (SEL) rates. Although less significant, spacecraft flying in the area around the poles experience similar upsets. Finally, powerful solar proton events in the range of 10MeV/10pfu to 100MeV/1pfu as are forecasted and tracked by NOAA's Space Environment Center in Colorado can result in Single Event Upset (SEU), Single Event Latch-up (SEL) and permanent failures such as Single Event Gate Rupture (SEGR) in some technologies. (Galactic Cosmic Rays (GCRs) are another source, especially for gate rupture) CALIPSO mitigates common radiation concerns in its data handling through the use of redundant processors, radiation-hardened Application Specific Integrated Circuits (ASIC), hardware-based Error Detection and Correction (EDAC), processor and memory scrubbing, redundant boot code and mirrored files. After presenting a system overview this paper will expand on each of these strategies. Where applicable, related on-orbit data collected since the CALIPSO initial boot on May 4, 2006 will be noted.

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Liu, Sandra; Titus, Jeffrey L.; McMorrow, Dale; Casey, Megan C.; Buchner, Stephen P.; Warner, Jeffrey; Phan, Anthony M.; Topper, Alyson D.; Kim, Hak S.;

Single photon detection imaging of Cherenkov light emitted during radiation therapy

NASA Astrophysics Data System (ADS)

Adamson, Philip M.; Andreozzi, Jacqueline M.; LaRochelle, Ethan; Gladstone, David J.; Pogue, Brian W.

2018-03-01

Cherenkov imaging during radiation therapy has been developed as a tool for dosimetry, which could have applications in patient delivery verification or in regular quality audit. The cameras used are intensified imaging sensors, either ICCD or ICMOS cameras, which allow important features of imaging, including: (1) nanosecond time gating, (2) amplification by 103-104, which together allow for imaging which has (1) real time capture at 10-30 frames per second, (2) sensitivity at the level of single photon event level, and (3) ability to suppress background light from the ambient room. However, the capability to achieve single photon imaging has not been fully analyzed to date, and as such was the focus of this study. The ability to quantitatively characterize how a single photon event appears in amplified camera imaging from the Cherenkov images was analyzed with image processing. The signal seen at normal gain levels appears to be a blur of about 90 counts in the CCD detector, after going through the chain of photocathode detection, amplification through a microchannel plate PMT, excitation onto a phosphor screen and then imaged on the CCD. The analysis of single photon events requires careful interpretation of the fixed pattern noise, statistical quantum noise distributions, and the spatial spread of each pulse through the ICCD.

Quantum rotation gates with controlled nonadiabatic evolutions

NASA Astrophysics Data System (ADS)

Abdelrahim, Abdelrahman A. H.; Benmachiche, Abderrahim; Subhi Mahmoud, Gharib; Messikh, Azeddine

2018-04-01

Quantum gates can be implemented adiabatically and nonadiabatically. Many schemes used at least two sequentially implemented gates to obtain an arbitrary one-qubit gate. Recently, it has been shown that nonadiabatic gates can be realized by single-shot implementation. It has also been shown that quantum gates can be implemented with controlled adiabatic evolutions. In this paper, we combine the advantage of single-shot implementation with controlled adiabatic evolutions to obtain controlled nonadiabatic evolutions. We also investigate the robustness to different types of errors. We find that the fidelity is close to unity for realistic decoherence rates.

A Rhizobium radiobacter Histidine Kinase Can Employ Both Boolean AND and OR Logic Gates to Initiate Pathogenesis.

PubMed

Fang, Fang; Lin, Yi-Han; Pierce, B Daniel; Lynn, David G

2015-10-12

The molecular logic gates that regulate gene circuits are necessarily intricate and highly regulated, particularly in the critical commitments necessary for pathogenesis. We now report simple AND and OR logic gates to be accessible within a single protein receptor. Pathogenesis by the bacterium Rhizobium radiobacter is mediated by a single histidine kinase, VirA, which processes multiple small molecule host signals (phenol and sugar). Mutagenesis analyses converged on a single signal integration node, and finer functional analyses revealed that a single residue could switch VirA from a functional AND logic gate to an OR gate where each of two signals activate independently. Host range preferences among natural strains of R. radiobacter correlate with these gate logic strategies. Although the precise mechanism for the signal integration node requires further analyses, long-range signal transmission through this histidine kinase can now be exploited for synthetic signaling circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evolutionary Based Techniques for Fault Tolerant Field Programmable Gate Arrays

NASA Technical Reports Server (NTRS)

Larchev, Gregory V.; Lohn, Jason D.

2006-01-01

The use of SRAM-based Field Programmable Gate Arrays (FPGAs) is becoming more and more prevalent in space applications. Commercial-grade FPGAs are potentially susceptible to permanently debilitating Single-Event Latchups (SELs). Repair methods based on Evolutionary Algorithms may be applied to FPGA circuits to enable successful fault recovery. This paper presents the experimental results of applying such methods to repair four commonly used circuits (quadrature decoder, 3-by-3-bit multiplier, 3-by-3-bit adder, 440-7 decoder) into which a number of simulated faults have been introduced. The results suggest that evolutionary repair techniques can improve the process of fault recovery when used instead of or as a supplement to Triple Modular Redundancy (TMR), which is currently the predominant method for mitigating FPGA faults.

Comparisons of single event vulnerability of GaAs SRAMS

NASA Astrophysics Data System (ADS)

Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

1986-12-01

A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

Single-channel kinetics of BK (Slo1) channels

PubMed Central

Geng, Yanyan; Magleby, Karl L.

2014-01-01

Single-channel kinetics has proven a powerful tool to reveal information about the gating mechanisms that control the opening and closing of ion channels. This introductory review focuses on the gating of large conductance Ca2+- and voltage-activated K+ (BK or Slo1) channels at the single-channel level. It starts with single-channel current records and progresses to presentation and analysis of single-channel data and the development of gating mechanisms in terms of discrete state Markov (DSM) models. The DSM models are formulated in terms of the tetrameric modular structure of BK channels, consisting of a central transmembrane pore-gate domain (PGD) attached to four surrounding transmembrane voltage sensing domains (VSD) and a large intracellular cytosolic domain (CTD), also referred to as the gating ring. The modular structure and data analysis shows that the Ca2+ and voltage dependent gating considered separately can each be approximated by 10-state two-tiered models with five closed states on the upper tier and five open states on the lower tier. The modular structure and joint Ca2+ and voltage dependent gating are consistent with a 50 state two-tiered model with 25 closed states on the upper tier and 25 open states on the lower tier. Adding an additional tier of brief closed (flicker states) to the 10-state or 50-state models improved the description of the gating. For fixed experimental conditions a channel would gate in only a subset of the potential number of states. The detected number of states and the correlations between adjacent interval durations are consistent with the tiered models. The examined models can account for the single-channel kinetics and the bursting behavior of gating. Ca2+ and voltage activate BK channels by predominantly increasing the effective opening rate of the channel with a smaller decrease in the effective closing rate. Ca2+ and depolarization thus activate by mainly destabilizing the closed states. PMID:25653620

Error-Transparent Quantum Gates for Small Logical Qubit Architectures

NASA Astrophysics Data System (ADS)

Kapit, Eliot

2018-02-01

One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

Gate sequence for continuous variable one-way quantum computation

PubMed Central

Su, Xiaolong; Hao, Shuhong; Deng, Xiaowei; Ma, Lingyu; Wang, Meihong; Jia, Xiaojun; Xie, Changde; Peng, Kunchi

2013-01-01

Measurement-based one-way quantum computation using cluster states as resources provides an efficient model to perform computation and information processing of quantum codes. Arbitrary Gaussian quantum computation can be implemented sufficiently by long single-mode and two-mode gate sequences. However, continuous variable gate sequences have not been realized so far due to an absence of cluster states larger than four submodes. Here we present the first continuous variable gate sequence consisting of a single-mode squeezing gate and a two-mode controlled-phase gate based on a six-mode cluster state. The quantum property of this gate sequence is confirmed by the fidelities and the quantum entanglement of two output modes, which depend on both the squeezing and controlled-phase gates. The experiment demonstrates the feasibility of implementing Gaussian quantum computation by means of accessible gate sequences.

Self-aligned gated field emission devices using single carbon nanofiber cathodes

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Hensley, D. K.; Simpson, M. L.; Lowndes, D. H.

2002-11-01

We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 mum that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler-Nordheim model of emission was demonstrated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

NASA Astrophysics Data System (ADS)

Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

2017-09-01

We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

Error budgeting single and two qubit gates in a superconducting qubit

NASA Astrophysics Data System (ADS)

Chen, Z.; Chiaro, B.; Dunsworth, A.; Foxen, B.; Neill, C.; Quintana, C.; Wenner, J.; Martinis, John. M.; Google Quantum Hardware Team Team

Superconducting qubits have shown promise as a platform for both error corrected quantum information processing and demonstrations of quantum supremacy. High fidelity quantum gates are crucial to achieving both of these goals, and superconducting qubits have demonstrated two qubit gates exceeding 99% fidelity. In order to improve gate fidelity further, we must understand the remaining sources of error. In this talk, I will demonstrate techniques for quantifying the contributions of control, decoherence, and leakage to gate error, for both single and two qubit gates. I will also discuss the near term outlook for achieving quantum supremacy using a gate-based approach in superconducting qubits. This work is supported Google Inc., and by the National Science Foundation Graduate Research Fellowship under Grant No. DGE 1605114.

Resonantly driven CNOT gate for electron spins.

PubMed

Zajac, D M; Sigillito, A J; Russ, M; Borjans, F; Taylor, J M; Burkard, G; Petta, J R

2018-01-26

Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon. Copyright © 2018, The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

A Novel Implementation of Efficient Algorithms for Quantum Circuit Synthesis

NASA Astrophysics Data System (ADS)

Zeller, Luke

In this project, we design and develop a computer program to effectively approximate arbitrary quantum gates using the discrete set of Clifford Gates together with the T gate (π/8 gate). Employing recent results from Mosca et. al. and Giles and Selinger, we implement a decomposition scheme that outputs a sequence of Clifford, T, and Tt gates that approximate the input to within a specified error range ɛ. Specifically, the given gate is first rounded to an element of Z[1/2, i] with a precision determined by ɛ, and then exact synthesis is employed to produce the resulting gate. It is known that this procedure is optimal in approximating an arbitrary single qubit gate. Our program, written in Matlab and Python, can complete both approximate and exact synthesis of qubits. It can be used to assist in the experimental implementation of an arbitrary fault-tolerant single qubit gate, for which direct implementation isn't feasible.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Enhanced ν-optical time domain reflectometry using gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector

NASA Astrophysics Data System (ADS)

Zhang, Xuping; Shi, Yuanlei; Shan, Yuanyuan; Sun, Zhenhong; Qiao, Weiyan; Zhang, Yixin

2016-09-01

Optical time domain reflectometry (OTDR) is one of the most successful diagnostic tools for nondestructive attenuation measurement of a fiber link. To achieve better sensitivity, spatial resolution, and avoid dead-zone in conversional OTDR, a single-photon detector has been introduced to form the photon-counting OTDR (ν-OTDR). We have proposed a ν-OTDR system using a gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector (SPAD). Benefiting from the superior performance of a sinusoidal gated SPAD on dark count probability, gating frequency, and gate duration, our ν-OTDR system has achieved a dynamic range (DR) of 33.4 dB with 1 μs probe pulse width after an equivalent measurement time of 51 s. This obtainable DR corresponds to a sensing length over 150 km. Our system has also obtained a spatial resolution of 5 cm at the end of a 5-km standard single-mode fiber. By employing a sinusoidal gating technique, we have improved the ν-OTDR spatial resolution and significantly reduced the measurement time.

Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes

NASA Astrophysics Data System (ADS)

Azuma, Yasuo; Sakamoto, Masanori; Teranishi, Toshiharu; Majima, Yutaka

2016-11-01

Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using the Au nanogap electrodes and the chemisorbed Au nanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulomb diamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and the charges on the floating gate electrodes were maintained for at least 12 h. By considering the capacitance of the floating gate electrode, the number of electrons in the floating gate electrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique.

Single-photon three-qubit quantum logic using spatial light modulators.

PubMed

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Evidence of a visual-to-auditory cross-modal sensory gating phenomenon as reflected by the human P50 event-related brain potential modulation.

PubMed

Lebib, Riadh; Papo, David; de Bode, Stella; Baudonnière, Pierre Marie

2003-05-08

We investigated the existence of a cross-modal sensory gating reflected by the modulation of an early electrophysiological index, the P50 component. We analyzed event-related brain potentials elicited by audiovisual speech stimuli manipulated along two dimensions: congruency and discriminability. The results showed that the P50 was attenuated when visual and auditory speech information were redundant (i.e. congruent), in comparison with this same event-related potential component elicited with discrepant audiovisual dubbing. When hard to discriminate, however, bimodal incongruent speech stimuli elicited a similar pattern of P50 attenuation. We concluded to the existence of a visual-to-auditory cross-modal sensory gating phenomenon. These results corroborate previous findings revealing a very early audiovisual interaction during speech perception. Finally, we postulated that the sensory gating system included a cross-modal dimension.

Compact quantum gates on electron-spin qubits assisted by diamond nitrogen-vacancy centers inside cavities

NASA Astrophysics Data System (ADS)

Wei, Hai-Rui; Deng, Fu-Guo

2013-10-01

Constructing compact quantum circuits for universal quantum gates on solid-state systems is crucial for quantum computing. We present some compact quantum circuits for a deterministic solid-state quantum computing, including the cnot, Toffoli, and Fredkin gates on the diamond NV centers confined inside cavities, achieved by some input-output processes of a single photon. Our quantum circuits for these universal quantum gates are simple and economic. Moreover, additional electron qubits are not employed, but only a single-photon medium. These gates have a long coherent time. We discuss the feasibility of these universal solid-state quantum gates, concluding that they are feasible with current technology.

Dual-gate GaAs FET switches

NASA Astrophysics Data System (ADS)

Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

1981-02-01

A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

Erroneous cardiac ECG-gated PET list-mode trigger events can be retrospectively identified and replaced by an offline reprocessing approach: first results in rodents

NASA Astrophysics Data System (ADS)

Böning, Guido; Todica, Andrei; Vai, Alessandro; Lehner, Sebastian; Xiong, Guoming; Mille, Erik; Ilhan, Harun; la Fougère, Christian; Bartenstein, Peter; Hacker, Marcus

2013-11-01

The assessment of left ventricular function, wall motion and myocardial viability using electrocardiogram (ECG)-gated [18F]-FDG positron emission tomography (PET) is widely accepted in human and in preclinical small animal studies. The nonterminal and noninvasive approach permits repeated in vivo evaluations of the same animal, facilitating the assessment of temporal changes in disease or therapy response. Although well established, gated small animal PET studies can contain erroneous gating information, which may yield to blurred images and false estimation of functional parameters. In this work, we present quantitative and visual quality control (QC) methods to evaluate the accuracy of trigger events in PET list-mode and physiological data. Left ventricular functional analysis is performed to quantify the effect of gating errors on the end-systolic and end-diastolic volumes, and on the ejection fraction (EF). We aim to recover the cardiac functional parameters by the application of the commonly established heart rate filter approach using fixed ranges based on a standardized population. In addition, we propose a fully reprocessing approach which retrospectively replaces the gating information of the PET list-mode file with appropriate list-mode decoding and encoding software. The signal of a simultaneously acquired ECG is processed using standard MATLAB vector functions, which can be individually adapted to reliably detect the R-peaks. Finally, the new trigger events are inserted into the PET list-mode file. A population of 30 mice with various health statuses was analyzed and standard cardiac parameters such as mean heart rate (119 ms ± 11.8 ms) and mean heart rate variability (1.7 ms ± 3.4 ms) derived. These standard parameter ranges were taken into account in the QC methods to select a group of nine optimal gated and a group of eight sub-optimal gated [18F]-FDG PET scans of mice from our archive. From the list-mode files of the optimal gated group, we randomly deleted various fractions (5% to 60%) of contained trigger events to generate a corrupted group. The filter approach was capable to correct the corrupted group and yield functional parameters with no significant difference to the optimal gated group. We successfully demonstrated the potential of the fully reprocessing approach by applying it to the sub-optimal group, where the functional parameters were significantly improved after reprocessing (mean EF from 41% ± 16% to 60% ± 13%). When applied to the optimal gated group the fully reprocessing approach did not alter the functional parameters significantly (mean EF from 64% ± 8% to 64 ± 7%). This work presents methods to determine and quantify erroneous gating in small animal gated [18F]-FDG PET scans. We demonstrate the importance of a quality check for cardiac triggering contained in PET list-mode data and the benefit of optionally reprocessing the fully recorded physiological information to retrospectively modify or fully replace the cardiac triggering in PET list-mode data. We aim to provide a preliminary guideline of how to proceed in the presence of errors and demonstrate that offline reprocessing by filtering erroneous trigger events and retrospective gating by ECG processing is feasible. Future work will focus on the extension by additional QC methods, which may exploit the amplitude of trigger events and ECG signal by means of pattern recognition. Furthermore, we aim to transfer the proposed QC methods and the fully reprocessing approach to human myocardial PET/CT.

A mechanism for acetylcholine receptor gating based on structure, coupling, phi, and flip.

PubMed

Gupta, Shaweta; Chakraborty, Srirupa; Vij, Ridhima; Auerbach, Anthony

2017-01-01

Nicotinic acetylcholine receptors are allosteric proteins that generate membrane currents by isomerizing ("gating") between resting and active conformations under the influence of neurotransmitters. Here, to explore the mechanisms that link the transmitter-binding sites (TBSs) with the distant gate, we use mutant cycle analyses to measure coupling between residue pairs, phi value analyses to sequence domain rearrangements, and current simulations to reproduce a microsecond shut component ("flip") apparent in single-channel recordings. Significant interactions between amino acids separated by >15 Å are rare; an exception is between the αM2-M3 linkers and the TBSs that are ∼30 Å apart. Linker residues also make significant, local interactions within and between subunits. Phi value analyses indicate that without agonists, the linker is the first region in the protein to reach the gating transition state. Together, the phi pattern and flip component suggest that a complete, resting↔active allosteric transition involves passage through four brief intermediate states, with brief shut events arising from sojourns in all or a subset. We derive energy landscapes for gating with and without agonists, and propose a structure-based model in which resting→active starts with spontaneous rearrangements of the M2-M3 linkers and TBSs. These conformational changes stabilize a twisted extracellular domain to promote transmembrane helix tilting, gate dilation, and the formation of a "bubble" that collapses to initiate ion conduction. The energy landscapes suggest that twisting is the most energetically unfavorable step in the resting→active conformational change and that the rate-limiting step in the reverse process is bubble formation. © 2017 Gupta et al.

Double-gated myocardial ASL perfusion imaging is robust to heart rate variation.

PubMed

Do, Hung Phi; Yoon, Andrew J; Fong, Michael W; Saremi, Farhood; Barr, Mark L; Nayak, Krishna S

2017-05-01

Cardiac motion is a dominant source of physiological noise (PN) in myocardial arterial spin labeled (ASL) perfusion imaging. This study investigates the sensitivity to heart rate variation (HRV) of double-gated myocardial ASL compared with the more widely used single-gated method. Double-gating and single-gating were performed on 10 healthy volunteers (n = 10, 3F/7M; age, 23-34 years) and eight heart transplant recipients (n = 8, 1F/7M; age, 26-76 years) at rest in the randomized order. Myocardial blood flow (MBF), PN, temporal signal-to-noise ratio (SNR), and HRV were measured. HRV ranged from 0.2 to 7.8 bpm. Double-gating PN did not depend on HRV, while single-gating PN increased with HRV. Over all subjects, double-gating provided a significant reduction in global PN (from 0.20 ± 0.15 to 0.11 ± 0.03 mL/g/min; P = 0.01) and per-segment PN (from 0.33 ± 0.23 to 0.21 ± 0.12 mL/g/min; P < 0.001), with significant increases in global temporal SNR (from 11 ± 8 to 18 ± 8; P = 0.02) and per-segment temporal SNR (from 7 ± 4 to 11 ± 12; P < 0.001) without significant difference in measured MBF. Single-gated myocardial ASL suffers from reduced temporal SNR, while double-gated myocardial ASL provides consistent temporal SNR independent of HRV. Magn Reson Med 77:1975-1980, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate.

PubMed

Soe, We-Hyo; Manzano, Carlos; Renaud, Nicolas; de Mendoza, Paula; De Sarkar, Abir; Ample, Francisco; Hliwa, Mohamed; Echavarren, Antonio M; Chandrasekhar, Natarajan; Joachim, Christian

2011-02-22

Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.

Implementing universal nonadiabatic holonomic quantum gates with transmons

NASA Astrophysics Data System (ADS)

Hong, Zhuo-Ping; Liu, Bao-Jie; Cai, Jia-Qi; Zhang, Xin-Ding; Hu, Yong; Wang, Z. D.; Xue, Zheng-Yuan

2018-02-01

Geometric phases are well known to be noise resilient in quantum evolutions and operations. Holonomic quantum gates provide us with a robust way towards universal quantum computation, as these quantum gates are actually induced by non-Abelian geometric phases. Here we propose and elaborate how to efficiently implement universal nonadiabatic holonomic quantum gates on simpler superconducting circuits, with a single transmon serving as a qubit. In our proposal, an arbitrary single-qubit holonomic gate can be realized in a single-loop scenario by varying the amplitudes and phase difference of two microwave fields resonantly coupled to a transmon, while nontrivial two-qubit holonomic gates may be generated with a transmission-line resonator being simultaneously coupled to the two target transmons in an effective resonant way. Moreover, our scenario may readily be scaled up to a two-dimensional lattice configuration, which is able to support large scalable quantum computation, paving the way for practically implementing universal nonadiabatic holonomic quantum computation with superconducting circuits.

Possibility designing XNOR and NAND molecular logic gates by using single benzene ring

NASA Astrophysics Data System (ADS)

Abbas, Mohammed A.; Hanoon, Falah H.; Al-Badry, Lafy F.

2017-09-01

This study focused on examining electronic transport through single benzene ring and suggested how such ring can be employed to design XNOR and NAND molecular logic gates. The single benzene ring was threaded by a magnetic flux. The magnetic flux and applied gate voltages were considered as the key tuning parameter in the XNOR and NAND gates operation. All the calculations are achieved by using steady-state theoretical model, which is based on the time-dependent Hamiltonian model. The transmission probability and the electric current are calculated as functions of electron energy and bias voltage, respectively. The application of the anticipated results can be a base for the progress of molecular electronics.

Deterministic nonlinear phase gates induced by a single qubit

NASA Astrophysics Data System (ADS)

Park, Kimin; Marek, Petr; Filip, Radim

2018-05-01

We propose deterministic realizations of nonlinear phase gates by repeating a finite sequence of non-commuting Rabi interactions between a harmonic oscillator and only a single two-level ancillary qubit. We show explicitly that the key nonclassical features of the ideal cubic phase gate and the quartic phase gate are generated in the harmonic oscillator faithfully by our method. We numerically analyzed the performance of our scheme under realistic imperfections of the oscillator and the two-level system. The methodology is extended further to higher-order nonlinear phase gates. This theoretical proposal completes the set of operations required for continuous-variable quantum computation.

Single calcium channel domain gating of synaptic vesicle fusion at fast synapses; analysis by graphic modeling

PubMed Central

Stanley, Elise F

2015-01-01

At fast-transmitting presynaptic terminals Ca2+ enter through voltage gated calcium channels (CaVs) and bind to a synaptic vesicle (SV) -associated calcium sensor (SV-sensor) to gate fusion and discharge. An open CaV generates a high-concentration plume, or nanodomain of Ca2+ that dissipates precipitously with distance from the pore. At most fast synapses, such as the frog neuromuscular junction (NMJ), the SV sensors are located sufficiently close to individual CaVs to be gated by single nanodomains. However, at others, such as the mature rodent calyx of Held (calyx of Held), the physiology is more complex with evidence that CaVs that are both close and distant from the SV sensor and it is argued that release is gated primarily by the overlapping Ca2+ nanodomains from many CaVs. We devised a 'graphic modeling' method to sum Ca2+ from individual CaVs located at varying distances from the SV-sensor to determine the SV release probability and also the fraction of that probability that can be attributed to single domain gating. This method was applied first to simplified, low and high CaV density model release sites and then to published data on the contrasting frog NMJ and the rodent calyx of Held native synapses. We report 3 main predictions: the SV-sensor is positioned very close to the point at which the SV fuses with the membrane; single domain-release gating predominates even at synapses where the SV abuts a large cluster of CaVs, and even relatively remote CaVs can contribute significantly to single domain-based gating. PMID:26457441

Universal photonic quantum gates assisted by ancilla diamond nitrogen-vacancy centers coupled to resonators

NASA Astrophysics Data System (ADS)

Wei, Hai-Rui; Long, Gui Lu

2015-03-01

We propose two compact, economic, and scalable schemes for implementing optical controlled-phase-flip and controlled-controlled-phase-flip gates by using the input-output process of a single-sided cavity strongly coupled to a single nitrogen-vacancy-center defect in diamond. Additional photonic qubits, necessary for procedures based on the parity-check measurement or controlled-path and merging gates, are not employed in our schemes. In the controlled-path gate, the paths of the target photon are conditionally controlled by the control photon, and these two paths can be merged back into one by using a merging gate. Only one half-wave plate is employed in our scheme for the controlled-phase-flip gate. Compared with the conventional synthesis procedures for constructing a controlled-controlled-phase-flip gate, the cost of which is two controlled-path gates and two merging gates, or six controlled-not gates, our scheme is more compact and simpler. Our schemes could be performed with a high fidelity and high efficiency with current achievable experimental techniques.

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.

PubMed

Muhonen, J T; Laucht, A; Simmons, S; Dehollain, J P; Kalra, R; Hudson, F E; Freer, S; Itoh, K M; Jamieson, D N; McCallum, J C; Dzurak, A S; Morello, A

2015-04-22

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual (31)P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized (31)P nucleus of a single P donor in isotopically purified (28)Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

Efficient Nonlocal M-Control and N-Target Controlled Unitary Gate Using Non-symmetric GHZ States

NASA Astrophysics Data System (ADS)

Chen, Li-Bing; Lu, Hong

2018-03-01

Efficient local implementation of a nonlocal M-control and N-target controlled unitary gate is considered. We first show that with the assistance of two non-symmetric qubit(1)-qutrit(N) Greenberger-Horne-Zeilinger (GHZ) states, a nonlocal 2-control and N-target controlled unitary gate can be constructed from 2 local two-qubit CNOT gates, 2 N local two-qutrit conditional SWAP gates, N local qutrit-qubit controlled unitary gates, and 2 N single-qutrit gates. At each target node, the two third levels of the two GHZ target qutrits are used to expose one and only one initial computational state to the local qutrit-qubit controlled unitary gate, instead of being used to hide certain states from the conditional dynamics. This scheme can be generalized straightforwardly to implement a higher-order nonlocal M-control and N-target controlled unitary gate by using M non-symmetric qubit(1)-qutrit(N) GHZ states as quantum channels. Neither the number of the additional levels of each GHZ target particle nor that of single-qutrit gates needs to increase with M. For certain realistic physical systems, the total gate time may be reduced compared with that required in previous schemes.

A parallel computational model for GATE simulations.

PubMed

Rannou, F R; Vega-Acevedo, N; El Bitar, Z

2013-12-01

GATE/Geant4 Monte Carlo simulations are computationally demanding applications, requiring thousands of processor hours to produce realistic results. The classical strategy of distributing the simulation of individual events does not apply efficiently for Positron Emission Tomography (PET) experiments, because it requires a centralized coincidence processing and large communication overheads. We propose a parallel computational model for GATE that handles event generation and coincidence processing in a simple and efficient way by decentralizing event generation and processing but maintaining a centralized event and time coordinator. The model is implemented with the inclusion of a new set of factory classes that can run the same executable in sequential or parallel mode. A Mann-Whitney test shows that the output produced by this parallel model in terms of number of tallies is equivalent (but not equal) to its sequential counterpart. Computational performance evaluation shows that the software is scalable and well balanced. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Multiple DC, single AC converter with a switched DC transformer

DOEpatents

Donnelly, M.K.; Hammerstrom, D.J.

1997-05-20

The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets. 14 figs.

Multiple DC, single AC converter with a switched DC transformer

DOEpatents

Donnelly, Matthew K.; Hammerstrom, Donald J.

1997-01-01

The invention is an improvement of the PASC inverter, wherein the improvements include the reduction from two shorting gates per transformer to one shorting gate per transformer and replacement of active control of the shorting gate with passive control of the shorting gate. Further advantages are obtained through the use of anti-parallel gate sets.

Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode

NASA Astrophysics Data System (ADS)

Zhang, Yixin; Zhang, Xuping; Shi, Yuanlei; Ying, Zhoufeng; Wang, Shun

2014-06-01

Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10-6 per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.

Radiation-hardened transistor and integrated circuit

DOEpatents

Ma, Kwok K.

2007-11-20

A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

Circadian Clock Synchronization of the Cell Cycle in Zebrafish Occurs through a Gating Mechanism Rather Than a Period-phase Locking Process.

PubMed

Laranjeiro, Ricardo; Tamai, T Katherine; Letton, William; Hamilton, Noémie; Whitmore, David

2018-04-01

Studies from a number of model systems have shown that the circadian clock controls expression of key cell cycle checkpoints, thus providing permissive or inhibitory windows in which specific cell cycle events can occur. However, a major question remains: Is the clock actually regulating the cell cycle through such a gating mechanism or, alternatively, is there a coupling process that controls the speed of cell cycle progression? Using our light-responsive zebrafish cell lines, we address this issue directly by synchronizing the cell cycle in culture simply by changing the entraining light-dark (LD) cycle in the incubator without the need for pharmacological intervention. Our results show that the cell cycle rapidly reentrains to a shifted LD cycle within 36 h, with changes in p21 expression and subsequent S phase timing occurring within the first few hours of resetting. Reentrainment of mitosis appears to lag S phase resetting by 1 circadian cycle. The range of entrainment of the zebrafish clock to differing LD cycles is large, from 16 to 32 hour periods. We exploited this feature to explore cell cycle entrainment at both the population and single cell levels. At the population level, cell cycle length is shortened or lengthened under corresponding T-cycles, suggesting that a 1:1 coupling mechanism is capable of either speeding up or slowing down the cell cycle. However, analysis at the single cell level reveals that this, in fact, is not true and that a gating mechanism is the fundamental method of timed cell cycle regulation in zebrafish. Cell cycle length at the single cell level is virtually unaltered with varying T-cycles.

Circadian Clock Synchronization of the Cell Cycle in Zebrafish Occurs through a Gating Mechanism Rather Than a Period-phase Locking Process

PubMed Central

Tamai, T. Katherine; Letton, William; Hamilton, Noémie; Whitmore, David

2018-01-01

Studies from a number of model systems have shown that the circadian clock controls expression of key cell cycle checkpoints, thus providing permissive or inhibitory windows in which specific cell cycle events can occur. However, a major question remains: Is the clock actually regulating the cell cycle through such a gating mechanism or, alternatively, is there a coupling process that controls the speed of cell cycle progression? Using our light-responsive zebrafish cell lines, we address this issue directly by synchronizing the cell cycle in culture simply by changing the entraining light-dark (LD) cycle in the incubator without the need for pharmacological intervention. Our results show that the cell cycle rapidly reentrains to a shifted LD cycle within 36 h, with changes in p21 expression and subsequent S phase timing occurring within the first few hours of resetting. Reentrainment of mitosis appears to lag S phase resetting by 1 circadian cycle. The range of entrainment of the zebrafish clock to differing LD cycles is large, from 16 to 32 hour periods. We exploited this feature to explore cell cycle entrainment at both the population and single cell levels. At the population level, cell cycle length is shortened or lengthened under corresponding T-cycles, suggesting that a 1:1 coupling mechanism is capable of either speeding up or slowing down the cell cycle. However, analysis at the single cell level reveals that this, in fact, is not true and that a gating mechanism is the fundamental method of timed cell cycle regulation in zebrafish. Cell cycle length at the single cell level is virtually unaltered with varying T-cycles. PMID:29444612

Methods for Quantum Circuit Design and Simulation

DTIC Science & Technology

2010-03-01

cannot be deter- mined given the one output. Reversible gates, expressed mathematically, are unitary matrices. 16 3.3.1 PAULI Gates/Matrices Three...common single-qubit gates are expressed mathematically as Pauli matrices, which are 2x2 matrices. A 2x2 quantum gate can be applied to a single quantum...bit (a 2x1 column vector). The Pauli matrices are expressed as follows: X =   0 1 1 0   Y =   0 −i i 0   Z =   1 0 0 −1   (3.10) where i

Applying fault tree analysis to the prevention of wrong-site surgery.

PubMed

Abecassis, Zachary A; McElroy, Lisa M; Patel, Ronak M; Khorzad, Rebeca; Carroll, Charles; Mehrotra, Sanjay

2015-01-01

Wrong-site surgery (WSS) is a rare event that occurs to hundreds of patients each year. Despite national implementation of the Universal Protocol over the past decade, development of effective interventions remains a challenge. We performed a systematic review of the literature reporting root causes of WSS and used the results to perform a fault tree analysis to assess the reliability of the system in preventing WSS and identifying high-priority targets for interventions aimed at reducing WSS. Process components where a single error could result in WSS were labeled with OR gates; process aspects reinforced by verification were labeled with AND gates. The overall redundancy of the system was evaluated based on prevalence of AND gates and OR gates. In total, 37 studies described risk factors for WSS. The fault tree contains 35 faults, most of which fall into five main categories. Despite the Universal Protocol mandating patient verification, surgical site signing, and a brief time-out, a large proportion of the process relies on human transcription and verification. Fault tree analysis provides a standardized perspective of errors or faults within the system of surgical scheduling and site confirmation. It can be adapted by institutions or specialties to lead to more targeted interventions to increase redundancy and reliability within the preoperative process. Copyright © 2015 Elsevier Inc. All rights reserved.

Demonstration of Inexact Computing Implemented in the JPEG Compression Algorithm using Probabilistic Boolean Logic applied to CMOS Components

DTIC Science & Technology

2015-12-24

Ripple-Carry RCA Ripple-Carry Adder RF Radio Frequency RMS Root-Mean-Square SEU Single Event Upset SIPI Signal and Image Processing Institute SNR...correctness, where 0.5 < p < 1, and a probability (1−p) of error. Errors could be caused by noise, radio frequency (RF) interference, crosstalk...utilized in the Apollo Guidance Computer is the three input NOR Gate. . . At the time that the decision was made to use in- 11 tegrated circuits, the

Demonstration of Inexact Computing Implemented in the JPEG Compression Algorithm Using Probabilistic Boolean Logic Applied to CMOS Components

DTIC Science & Technology

2015-12-24

Ripple-Carry RCA Ripple-Carry Adder RF Radio Frequency RMS Root-Mean-Square SEU Single Event Upset SIPI Signal and Image Processing Institute SNR...correctness, where 0.5 < p < 1, and a probability (1−p) of error. Errors could be caused by noise, radio frequency (RF) interference, crosstalk...utilized in the Apollo Guidance Computer is the three input NOR Gate. . . At the time that the decision was made to use in- 11 tegrated circuits, the

Mitigating Upsets in SRAM-Based FPGAs from the Xilinx Virtex 2 Family

NASA Technical Reports Server (NTRS)

Swift, G. M.; Yui, C. C.; Carmichael, C.; Koga, R.; George, J. S.

2003-01-01

Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.

Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories

NASA Astrophysics Data System (ADS)

Edmonds, Larry D.; Irom, Farokh; Allen, Gregory R.

2017-08-01

A recent model provides risk estimates for the deprogramming of initially programmed floating gates via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. This paper extends the model to include TID effects in the control circuitry by including one additional parameter. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

High-fidelity gates towards a scalable superconducting quantum processor

NASA Astrophysics Data System (ADS)

Chow, Jerry M.; Corcoles, Antonio D.; Gambetta, Jay M.; Rigetti, Chad; Johnson, Blake R.; Smolin, John A.; Merkel, Seth; Poletto, Stefano; Rozen, Jim; Rothwell, Mary Beth; Keefe, George A.; Ketchen, Mark B.; Steffen, Matthias

2012-02-01

We experimentally explore the implementation of high-fidelity gates on multiple superconducting qubits coupled to multiple resonators. Having demonstrated all-microwave single and two qubit gates with fidelities > 90% on multi-qubit single-resonator systems, we expand the application to qubits across two resonators and investigate qubit coupling in this circuit. The coupled qubit-resonators are building blocks towards two-dimensional lattice networks for the application of surface code quantum error correction algorithms.

Time-gated flow cytometry: an ultra-high selectivity method to recover ultra-rare-event μ-targets in high-background biosamples

NASA Astrophysics Data System (ADS)

Jin, Dayong; Piper, James A.; Leif, Robert C.; Yang, Sean; Ferrari, Belinda C.; Yuan, Jingli; Wang, Guilan; Vallarino, Lidia M.; Williams, John W.

2009-03-01

A fundamental problem for rare-event cell analysis is auto-fluorescence from nontarget particles and cells. Time-gated flow cytometry is based on the temporal-domain discrimination of long-lifetime (>1 μs) luminescence-stained cells and can render invisible all nontarget cell and particles. We aim to further evaluate the technique, focusing on detection of ultra-rare-event 5-μm calibration beads in environmental water dirt samples. Europium-labeled 5-μm calibration beads with improved luminescence homogeneity and reduced aggregation were evaluated using the prototype UV LED excited time-gated luminescence (TGL) flow cytometer (FCM). A BD FACSAria flow cytometer was used to sort accurately a very low number of beads (<100 events), which were then spiked into concentrated samples of environmental water. The use of europium-labeled beads permitted the demonstration of specific detection rates of 100%+/-30% and 91%+/-3% with 10 and 100 target beads, respectively, that were mixed with over one million nontarget autofluorescent background particles. Under the same conditions, a conventional FCM was unable to recover rare-event fluorescein isothiocyanate (FITC) calibration beads. Preliminary results on Giardia detection are also reported. We have demonstrated the scientific value of lanthanide-complex biolabels in flow cytometry. This approach may augment the current method that uses multifluorescence-channel flow cytometry gating.

The four-gate transistor

NASA Technical Reports Server (NTRS)

Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

2002-01-01

The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

NASA Technical Reports Server (NTRS)

Pinto, N. J.; Perez, R.; Mueller, C. H.; Theofylaktos, N.; Miranda, F. A.

2006-01-01

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

UVPROM dosimetry, microdosimetry and applications to SEU and extreme value theory

NASA Astrophysics Data System (ADS)

Scheick, Leif Zebediah

A new method is described for characterizing a device in terms of the statistical distribution of first failures. The method is based on the erasure of a commercial Ultra- Violet erasable Programmable Read Only Memory (UVPROM). The method of readout would be used on a spacecraft or in other restrictive radiation environments. The measurement of the charge remaining on the floating gate is used to determine absorbed dose. The method of determining dose does not require the detector to be destroyed or erased nor does it effect the ability for taking further measurements. This is compared to extreme value theory applied to the statistical distributions that apply to this device. This technique predicts the threshold of Single Event Effects (SEE), like anomalous changes in erasure time in programmable devices due to high microdose energy-deposition events. This technique also allows for advanced non-destructive, screening of a single microelectronic devices for predictable response in a stressful, i.e. radiation, environments.

Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

NASA Astrophysics Data System (ADS)

Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

2014-03-01

Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

GATE Monte Carlo simulation of dose distribution using MapReduce in a cloud computing environment.

PubMed

Liu, Yangchuan; Tang, Yuguo; Gao, Xin

2017-12-01

The GATE Monte Carlo simulation platform has good application prospects of treatment planning and quality assurance. However, accurate dose calculation using GATE is time consuming. The purpose of this study is to implement a novel cloud computing method for accurate GATE Monte Carlo simulation of dose distribution using MapReduce. An Amazon Machine Image installed with Hadoop and GATE is created to set up Hadoop clusters on Amazon Elastic Compute Cloud (EC2). Macros, the input files for GATE, are split into a number of self-contained sub-macros. Through Hadoop Streaming, the sub-macros are executed by GATE in Map tasks and the sub-results are aggregated into final outputs in Reduce tasks. As an evaluation, GATE simulations were performed in a cubical water phantom for X-ray photons of 6 and 18 MeV. The parallel simulation on the cloud computing platform is as accurate as the single-threaded simulation on a local server and the simulation correctness is not affected by the failure of some worker nodes. The cloud-based simulation time is approximately inversely proportional to the number of worker nodes. For the simulation of 10 million photons on a cluster with 64 worker nodes, time decreases of 41× and 32× were achieved compared to the single worker node case and the single-threaded case, respectively. The test of Hadoop's fault tolerance showed that the simulation correctness was not affected by the failure of some worker nodes. The results verify that the proposed method provides a feasible cloud computing solution for GATE.

Observation of ambipolar switching in a silver nanoparticle single-electron transistor with multiple molecular floating gates

NASA Astrophysics Data System (ADS)

Yamamoto, Makoto; Shinohara, Shuhei; Tamada, Kaoru; Ishii, Hisao; Noguchi, Yutaka

2016-03-01

Ambipolar switching behavior was observed in a silver nanoparticle (AgNP)-based single-electron transistor (SET) with tetra-tert-butyl copper phthalocyanine (ttbCuPc) as a molecular floating gate. Depending on the wavelength of the incident light, the stability diagram shifted to the negative and positive directions along the gate voltage axis. These results were explained by the photoinduced charging of ttbCuPc molecules in the vicinity of AgNPs. Moreover, multiple device states were induced by the light irradiation at a wavelength of 600 nm, suggesting that multiple ttbCuPc molecules individually worked as a floating gate.

Universal Quantum Computing with Measurement-Induced Continuous-Variable Gate Sequence in a Loop-Based Architecture.

PubMed

Takeda, Shuntaro; Furusawa, Akira

2017-09-22

We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.

Universal Quantum Computing with Measurement-Induced Continuous-Variable Gate Sequence in a Loop-Based Architecture

NASA Astrophysics Data System (ADS)

Takeda, Shuntaro; Furusawa, Akira

2017-09-01

We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.

Fabrication of quantum dots in undoped Si/Si 0.8Ge 0.2 heterostructures using a single metal-gate layer

DOE PAGES

Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

2016-08-01

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

Impact of sea level rise on tide gate function.

PubMed

Walsh, Sean; Miskewitz, Robert

2013-01-01

Sea level rise resulting from climate change and land subsidence is expected to severely impact the duration and associated damage resulting from flooding events in tidal communities. These communities must continuously invest resources for the maintenance of existing structures and installation of new flood prevention infrastructure. Tide gates are a common flood prevention structure for low-lying communities in the tidal zone. Tide gates close during incoming tides to prevent inundation from downstream water propagating inland and open during outgoing tides to drain upland areas. Higher downstream mean sea level elevations reduce the effectiveness of tide gates by impacting the hydraulics of the system. This project developed a HEC-RAS and HEC-HMS model of an existing tide gate structure and its upland drainage area in the New Jersey Meadowlands to simulate the impact of rising mean sea level elevations on the tide gate's ability to prevent upstream flooding. Model predictions indicate that sea level rise will reduce the tide gate effectiveness resulting in longer lasting and deeper flood events. The results indicate that there is a critical point in the sea level elevation for this local area, beyond which flooding scenarios become dramatically worse and would have a significantly negative impact on the standard of living and ability to do business in one of the most densely populated areas of America.

G4-FETs as Universal and Programmable Logic Gates

NASA Technical Reports Server (NTRS)

Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

2007-01-01

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Flexible and re-configurable optical three-input XOR logic gate of phase-modulated signals with multicast functionality for potential application in optical physical-layer network coding.

PubMed

Lu, Guo-Wei; Qin, Jun; Wang, Hongxiang; Ji, XuYuefeng; Sharif, Gazi Mohammad; Yamaguchi, Shigeru

2016-02-08

Optical logic gate, especially exclusive-or (XOR) gate, plays important role in accomplishing photonic computing and various network functionalities in future optical networks. On the other hand, optical multicast is another indispensable functionality to efficiently deliver information in optical networks. In this paper, for the first time, we propose and experimentally demonstrate a flexible optical three-input XOR gate scheme for multiple input phase-modulated signals with a 1-to-2 multicast functionality for each XOR operation using four-wave mixing (FWM) effect in single piece of highly-nonlinear fiber (HNLF). Through FWM in HNLF, all of the possible XOR operations among input signals could be simultaneously realized by sharing a single piece of HNLF. By selecting the obtained XOR components using a followed wavelength selective component, the number of XOR gates and the participant light in XOR operations could be flexibly configured. The re-configurability of the proposed XOR gate and the function integration of the optical logic gate and multicast in single device offer the flexibility in network design and improve the network efficiency. We experimentally demonstrate flexible 3-input XOR gate for four 10-Gbaud binary phase-shift keying signals with a multicast scale of 2. Error-free operations for the obtained XOR results are achieved. Potential application of the integrated XOR and multicast function in network coding is also discussed.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

PubMed

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Four Ca2+ Ions Activate TRPM2 Channels by Binding in Deep Crevices near the Pore but Intracellularly of the Gate

PubMed Central

Törőcsik, Beáta

2009-01-01

TRPM2 is a tetrameric Ca2+-permeable channel involved in immunocyte respiratory burst and in postischaemic neuronal death. In whole cells, TRPM2 activity requires intracellular ADP ribose (ADPR) and intra- or extracellular Ca2+, but the mechanism and the binding sites for Ca2+ activation remain unknown. Here we study TRPM2 gating in inside-out patches while directly controlling intracellular ligand concentrations. Concentration jump experiments at various voltages and Ca2+ dependence of steady-state single-channel gating kinetics provide unprecedented insight into the molecular mechanism of Ca2+ activation. In patches excised from Xenopus laevis oocytes expressing human TRPM2, coapplication of intracellular ADPR and Ca2+ activated ∼50-pS nonselective cation channels; K1/2 for ADPR was ∼1 µM at saturating Ca2+. Intracellular Ca2+ dependence of TRPM2 steady-state opening and closing rates (at saturating [ADPR] and low extracellular Ca2+) reveals that Ca2+ activation is a consequence of tighter binding of Ca2+ in the open rather than in the closed channel conformation. Four Ca2+ ions activate TRPM2 with a Monod-Wymann-Changeux mechanism: each binding event increases the open-closed equilibrium constant ∼33-fold, producing altogether 106-fold activation. Experiments in the presence of 1 mM of free Ca2+ on the extracellular side clearly show that closed channels do not sense extracellular Ca2+, but once channels have opened Ca2+ entering passively through the pore slows channel closure by keeping the “activating sites” saturated, despite rapid continuous Ca2+-free wash of the intracellular channel surface. This effect of extracellular Ca2+ on gating is gradually lost at progressively depolarized membrane potentials, where the driving force for Ca2+ influx is diminished. Thus, the activating sites lie intracellularly from the gate, but in a shielded crevice near the pore entrance. Our results suggest that in intact cells that contain micromolar ADPR a single brief puff of Ca2+ likely triggers prolonged, self-sustained TRPM2 activity. PMID:19171771

Improved event positioning in a gamma ray detector using an iterative position-weighted centre-of-gravity algorithm.

PubMed

Liu, Chen-Yi; Goertzen, Andrew L

2013-07-21

An iterative position-weighted centre-of-gravity algorithm was developed and tested for positioning events in a silicon photomultiplier (SiPM)-based scintillation detector for positron emission tomography. The algorithm used a Gaussian-based weighting function centred at the current estimate of the event location. The algorithm was applied to the signals from a 4 × 4 array of SiPM detectors that used individual channel readout and a LYSO:Ce scintillator array. Three scintillator array configurations were tested: single layer with 3.17 mm crystal pitch, matched to the SiPM size; single layer with 1.5 mm crystal pitch; and dual layer with 1.67 mm crystal pitch and a ½ crystal offset in the X and Y directions between the two layers. The flood histograms generated by this algorithm were shown to be superior to those generated by the standard centre of gravity. The width of the Gaussian weighting function of the algorithm was optimized for different scintillator array setups. The optimal width of the Gaussian curve was found to depend on the amount of light spread. The algorithm required less than 20 iterations to calculate the position of an event. The rapid convergence of this algorithm will readily allow for implementation on a front-end detector processing field programmable gate array for use in improved real-time event positioning and identification.

Determination of glomerular filtration rate (GFR) from fractional renal accumulation of iodinated contrast material: a convenient and rapid single-kidney CT-GFR technique.

PubMed

Yuan, XiaoDong; Tang, Wei; Shi, WenWei; Yu, Libao; Zhang, Jing; Yuan, Qing; You, Shan; Wu, Ning; Ao, Guokun; Ma, Tingting

2018-07-01

To develop a convenient and rapid single-kidney CT-GFR technique. One hundred and twelve patients referred for multiphasic renal CT and 99mTc-DTPA renal dynamic imaging Gates-GFR measurement were prospectively included and randomly divided into two groups of 56 patients each: the training group and the validation group. On the basis of the nephrographic phase images, the fractional renal accumulation (FRA) was calculated and correlated with the Gates-GFR in the training group. From this correlation a formula was derived for single-kidney CT-GFR calculation, which was validated by a paired t test and linear regression analysis with the single-kidney Gates-GFR in the validation group. In the training group, the FRA (x-axis) correlated well (r = 0.95, p < 0.001) with single-kidney Gates-GFR (y-axis), producing a regression equation of y = 1665x + 1.5 for single-kidney CT-GFR calculation. In the validation group, the difference between the methods of single-kidney GFR measurements was 0.38 ± 5.57 mL/min (p = 0.471); the regression line is identical to the diagonal (intercept = 0 and slope = 1) (p = 0.727 and p = 0.473, respectively), with a standard deviation of residuals of 5.56 mL/min. A convenient and rapid single-kidney CT-GFR technique was presented and validated in this investigation. • The new CT-GFR method takes about 2.5 min of patient time. • The CT-GFR method demonstrated identical results to the Gates-GFR method. • The CT-GFR method is based on the fractional renal accumulation of iodinated CM. • The CT-GFR method is achieved without additional radiation dose to the patient.

Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

PubMed

Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

2017-04-28

High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

Network-based simulation of aircraft at gates in airport terminals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Y.

1998-03-01

Simulation is becoming an essential tool for planning, design, and management of airport facilities. A simulation of aircraft at gates at an airport can be applied for various periodically performed applications, relating to the dynamic behavior of aircraft at gates in airport terminals for analyses, evaluations, and decision supports. Conventionally, such simulations are implemented using an event-driven method. For a more efficient simulation, this paper proposes a network-based method. The basic idea is to transform all the sequence constraint relations of aircraft at gates into a network. The simulation is done by calculating the longest path to all the nodesmore » in the network. The effect of the algorithm of the proposed method has been examined by experiments, and the superiority of the proposed method over the event-driven method is revealed through comprehensive comparisons of their overall simulation performance.« less

Background in X-ray astronomy proportional counters

NASA Technical Reports Server (NTRS)

Bower, C. R.; Dietz, K. L.; Ramsey, B. D.; Weisskopf, M. C.

1991-01-01

The authors report the results of an investigation into the nature of background events in proportional counters sensitive to X-ray photons having energy of less than 150 keV. Even with the use of thick shields composed of high-atomic-number material, a significant flux background in the detector's energy region can result from multiple Compton scattering in the mass surrounding the active region of the detector. The importance of the selection of detector components in the reduction of the background by more than an order of magnitude is emphasized. Experimental results are shown to agree qualitatively with Monte Carlo simulations. It is concluded that escape gating is a powerful means of determining the nature of background in flight detectors: the single/pair ratios reveal whether the detected events are charged particles or photons.

Mechanical gate control for atom-by-atom cluster assembly with scanning probe microscopy.

PubMed

Sugimoto, Yoshiaki; Yurtsever, Ayhan; Hirayama, Naoki; Abe, Masayuki; Morita, Seizo

2014-07-11

Nanoclusters supported on substrates are of great importance in physics and chemistry as well as in technical applications, such as single-electron transistors and nanocatalysts. The properties of nanoclusters differ significantly from those of either the constituent atoms or the bulk solid, and are highly sensitive to size and chemical composition. Here we propose a novel atom gating technique to assemble various atom clusters composed of a defined number of atoms at room temperature. The present gating operation is based on the transfer of single diffusing atoms among nanospaces governed by gates, which can be opened in response to the chemical interaction force with a scanning probe microscope tip. This method provides an alternative way to create pre-designed atom clusters with different chemical compositions and to evaluate their chemical stabilities, thus enabling investigation into the influence that a single dopant atom incorporated into the host clusters has on a given cluster stability.

Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

NASA Astrophysics Data System (ADS)

Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

2018-01-01

In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Experimental investigation of a four-qubit linear-optical quantum logic circuit

NASA Astrophysics Data System (ADS)

Stárek, R.; Mičuda, M.; Miková, M.; Straka, I.; Dušek, M.; Ježek, M.; Fiurášek, J.

2016-09-01

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C3Z gate and several two-qubit and single-qubit gates. The C3Z gate introduces a sign flip if and only if all four qubits are in the computational state |1>. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses.

Experimental investigation of a four-qubit linear-optical quantum logic circuit.

PubMed

Stárek, R; Mičuda, M; Miková, M; Straka, I; Dušek, M; Ježek, M; Fiurášek, J

2016-09-20

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C(3)Z gate and several two-qubit and single-qubit gates. The C(3)Z gate introduces a sign flip if and only if all four qubits are in the computational state |1〉. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses.

Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comandar, L. C.; Engineering Department, Cambridge University, 9 J J Thomson Ave, Cambridge CB3 0FA; Fröhlich, B.

We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with anmore » increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns.« less

Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.; Mueller, Wolfgang

2008-01-01

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

NASA Astrophysics Data System (ADS)

Michele, Simone; Sammarco, Paolo; d'Errico, Michele

2016-08-01

We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

Multi-target-qubit unconventional geometric phase gate in a multi-cavity system

NASA Astrophysics Data System (ADS)

Liu, Tong; Cao, Xiao-Zhi; Su, Qi-Ping; Xiong, Shao-Jie; Yang, Chui-Ping

2016-02-01

Cavity-based large scale quantum information processing (QIP) may involve multiple cavities and require performing various quantum logic operations on qubits distributed in different cavities. Geometric-phase-based quantum computing has drawn much attention recently, which offers advantages against inaccuracies and local fluctuations. In addition, multiqubit gates are particularly appealing and play important roles in QIP. We here present a simple and efficient scheme for realizing a multi-target-qubit unconventional geometric phase gate in a multi-cavity system. This multiqubit phase gate has a common control qubit but different target qubits distributed in different cavities, which can be achieved using a single-step operation. The gate operation time is independent of the number of qubits and only two levels for each qubit are needed. This multiqubit gate is generic, e.g., by performing single-qubit operations, it can be converted into two types of significant multi-target-qubit phase gates useful in QIP. The proposal is quite general, which can be used to accomplish the same task for a general type of qubits such as atoms, NV centers, quantum dots, and superconducting qubits.

Multi-target-qubit unconventional geometric phase gate in a multi-cavity system.

PubMed

Liu, Tong; Cao, Xiao-Zhi; Su, Qi-Ping; Xiong, Shao-Jie; Yang, Chui-Ping

2016-02-22

Cavity-based large scale quantum information processing (QIP) may involve multiple cavities and require performing various quantum logic operations on qubits distributed in different cavities. Geometric-phase-based quantum computing has drawn much attention recently, which offers advantages against inaccuracies and local fluctuations. In addition, multiqubit gates are particularly appealing and play important roles in QIP. We here present a simple and efficient scheme for realizing a multi-target-qubit unconventional geometric phase gate in a multi-cavity system. This multiqubit phase gate has a common control qubit but different target qubits distributed in different cavities, which can be achieved using a single-step operation. The gate operation time is independent of the number of qubits and only two levels for each qubit are needed. This multiqubit gate is generic, e.g., by performing single-qubit operations, it can be converted into two types of significant multi-target-qubit phase gates useful in QIP. The proposal is quite general, which can be used to accomplish the same task for a general type of qubits such as atoms, NV centers, quantum dots, and superconducting qubits.

A binary link tracker for the BaBar level 1 trigger system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berenyi, A.; Chen, H.K.; Dao, K.

1999-08-01

The BaBar detector at PEP-II will operate in a high-luminosity e{sup +}e{sup {minus}} collider environment near the {Upsilon}(4S) resonance with the primary goal of studying CP violation in the B meson system. In this environment, typical physics events of interest involve multiple charged particles. These events are identified by counting these tracks in a fast first level (Level 1) trigger system, by reconstructing the tracks in real time. For this purpose, a Binary Link Tracker Module (BLTM) was designed and fabricated for the BaBar Level 1 Drift Chamber trigger system. The BLTM is responsible for linking track segments, constructed bymore » the Track Segment Finder Modules (TSFM), into complete tracks. A single BLTM module processes a 360 MBytes/s stream of segment hit data, corresponding to information from the entire Drift Chamber, and implements a fast and robust algorithm that tolerates high hit occupancies as well as local inefficiencies of the Drift Chamber. The algorithms and the necessary control logic of the BLTM were implemented in Field Programmable Gate Arrays (FPGAs), using the VHDL hardware description language. The finished 9U x 400 mm Euro-format board contains roughly 75,000 gates of programmable logic or about 10,000 lines of VHDL code synthesized into five FPGAs.« less

Gating kinetics of batrachotoxin-modified Na+ channels in the squid giant axon. Voltage and temperature effects.

PubMed Central

Correa, A M; Bezanilla, F; Latorre, R

1992-01-01

The gating kinetics of batrachotoxin-modified Na+ channels were studied in outside-out patches of axolemma from the squid giant axon by means of the cut-open axon technique. Single channel kinetics were characterized at different membrane voltages and temperatures. The probability of channel opening (Po) as a function of voltage was well described by a Boltzmann distribution with an equivalent number of gating particles of 3.58. The voltage at which the channel was open 50% of the time was a function of [Na+] and temperature. A decrease in the internal [Na+] induced a shift to the right of the Po vs. V curve, suggesting the presence of an integral negative fixed charge near the activation gate. An increase in temperature decreased Po, indicating a stabilization of the closed configuration of the channel and also a decrease in entropy upon channel opening. Probability density analysis of dwell times in the closed and open states of the channel at 0 degrees C revealed the presence of three closed and three open states. The slowest open kinetic component constituted only a small fraction of the total number of transitions and became negligible at voltages greater than -65 mV. Adjacent interval analysis showed that there is no correlation in the duration of successive open and closed events. Consistent with this analysis, maximum likelihood estimation of the rate constants for nine different single-channel models produced a preferred model (model 1) having a linear sequence of closed states and two open states emerging from the last closed state. The effect of temperature on the rate constants of model 1 was studied. An increase in temperature increased all rate constants; the shift in Po would be the result of an increase in the closing rates predominant over the change in the opening rates. The temperature study also provided the basis for building an energy diagram for the transitions between channel states. PMID:1318096

ZnO-based multiple channel and multiple gate FinMOSFETs

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Huang, Hung-Lin; Tseng, Chun-Yen; Lee, Hsin-Ying

2016-02-01

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

NASA Astrophysics Data System (ADS)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-01

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

AC signal characterization for optimization of a CMOS single-electron pump

NASA Astrophysics Data System (ADS)

Murray, Roy; Perron, Justin K.; Stewart, M. D., Jr.; Zimmerman, Neil M.

2018-02-01

Pumping single electrons at a set rate is being widely pursued as an electrical current standard. Semiconductor charge pumps have been pursued in a variety of modes, including single gate ratchet, a variety of 2-gate ratchet pumps, and 2-gate turnstiles. Whether pumping with one or two AC signals, lower error rates can result from better knowledge of the properties of the AC signal at the device. In this work, we operated a CMOS single-electron pump with a 2-gate ratchet style measurement and used the results to characterize and optimize our two AC signals. Fitting this data at various frequencies revealed both a difference in signal path length and attenuation between our two AC lines. Using this data, we corrected for the difference in signal path length and attenuation by applying an offset in both the phase and the amplitude at the signal generator. Operating the device as a turnstile while using the optimized parameters determined from the 2-gate ratchet measurement led to much flatter, more robust charge pumping plateaus. This method was useful in tuning our device up for optimal charge pumping, and may prove useful to the semiconductor quantum dot community to determine signal attenuation and path differences at the device.

Operation and biasing for single device equivalent to CMOS

DOEpatents

Welch, James D.

2001-01-01

Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Time-Gated Orthogonal Scanning Automated Microscopy (OSAM) for High-speed Cell Detection and Analysis

NASA Astrophysics Data System (ADS)

Lu, Yiqing; Xi, Peng; Piper, James A.; Huo, Yujing; Jin, Dayong

2012-11-01

We report a new development of orthogonal scanning automated microscopy (OSAM) incorporating time-gated detection to locate rare-event organisms regardless of autofluorescent background. The necessity of using long-lifetime (hundreds of microseconds) luminescent biolabels for time-gated detection implies long integration (dwell) time, resulting in slow scan speed. However, here we achieve high scan speed using a new 2-step orthogonal scanning strategy to realise on-the-fly time-gated detection and precise location of 1-μm lanthanide-doped microspheres with signal-to-background ratio of 8.9. This enables analysis of a 15 mm × 15 mm slide area in only 3.3 minutes. We demonstrate that detection of only a few hundred photoelectrons within 100 μs is sufficient to distinguish a target event in a prototype system using ultraviolet LED excitation. Cytometric analysis of lanthanide labelled Giardia cysts achieved a signal-to-background ratio of two orders of magnitude. Results suggest that time-gated OSAM represents a new opportunity for high-throughput background-free biosensing applications.

Dynamical decoupling of local transverse random telegraph noise in a two-qubit gate

NASA Astrophysics Data System (ADS)

D'Arrigo, A.; Falci, G.; Paladino, E.

2015-10-01

Achieving high-fidelity universal two-qubit gates is a central requisite of any implementation of quantum information processing. The presence of spurious fluctuators of various physical origin represents a limiting factor for superconducting nanodevices. Operating qubits at optimal points, where the qubit-fluctuator interaction is transverse with respect to the single qubit Hamiltonian, considerably improved single qubit gates. Further enhancement has been achieved by dynamical decoupling (DD). In this article we investigate DD of transverse random telegraph noise acting locally on each of the qubits forming an entangling gate. Our analysis is based on the exact numerical solution of the stochastic Schrödinger equation. We evaluate the gate error under local periodic, Carr-Purcell and Uhrig DD sequences. We find that a threshold value of the number, n, of pulses exists above which the gate error decreases with a sequence-specific power-law dependence on n. Below threshold, DD may even increase the error with respect to the unconditioned evolution, a behaviour reminiscent of the anti-Zeno effect.

Compact universal logic gates realized using quantization of current in nanodevices.

PubMed

Zhang, Wancheng; Wu, Nan-Jian; Yang, Fuhua

2007-12-12

This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.

High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2018-04-01

We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

PubMed

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Single-channel recordings of RyR1 at microsecond resolution in CMOS-suspended membranes.

PubMed

Hartel, Andreas J W; Ong, Peijie; Schroeder, Indra; Giese, M Hunter; Shekar, Siddharth; Clarke, Oliver B; Zalk, Ran; Marks, Andrew R; Hendrickson, Wayne A; Shepard, Kenneth L

2018-02-20

Single-channel recordings are widely used to explore functional properties of ion channels. Typically, such recordings are performed at bandwidths of less than 10 kHz because of signal-to-noise considerations, limiting the temporal resolution available for studying fast gating dynamics to greater than 100 µs. Here we present experimental methods that directly integrate suspended lipid bilayers with high-bandwidth, low-noise transimpedance amplifiers based on complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) technology to achieve bandwidths in excess of 500 kHz and microsecond temporal resolution. We use this CMOS-integrated bilayer system to study the type 1 ryanodine receptor (RyR1), a Ca 2+ -activated intracellular Ca 2+ -release channel located on the sarcoplasmic reticulum. We are able to distinguish multiple closed states not evident with lower bandwidth recordings, suggesting the presence of an additional Ca 2+ binding site, distinct from the site responsible for activation. An extended beta distribution analysis of our high-bandwidth data can be used to infer closed state flicker events as fast as 35 ns. These events are in the range of single-file ion translocations.

Coupled gating of skeletal muscle ryanodine receptors is modulated by Ca2+, Mg2+, and ATP

PubMed Central

Porta, Maura; Diaz-Sylvester, Paula L.; Neumann, Jake T.; Escobar, Ariel L.; Fleischer, Sidney

2012-01-01

Coupled gating (synchronous openings and closures) of groups of skeletal muscle ryanodine receptors (RyR1), which mimics RyR1-mediated Ca2+ release underlying Ca2+ sparks, was first described by Marx et al. (Marx SO, Ondrias K, Marks AR. Science 281: 818–821, 1998). The nature of the RyR1-RyR1 interactions for coupled gating still needs to be characterized. Consequently, we defined planar lipid bilayer conditions where ∼25% of multichannel reconstitutions contain mixtures of coupled and independently gating RyR1. In ∼10% of the cases, all RyRs (2–10 channels; most frequently 3–4) gated in coupled fashion, allowing for quantification. Our results indicated that coupling required cytosolic solutions containing ATP/Mg2+ and high (50 mM) luminal Ca2+ (Calum) or Sr2+ solutions. Bursts of coupled activity (events) started and ended abruptly, with all channels activating/deactivating within ∼300 μs. Coupled RyR1 were heterogeneous, where highly active RyR1 (“drivers”) seemed open during the entire coupled event (Po = 1), while other RyR1s (“followers”) displayed abundant flickering and smaller amplitude. Drivers mean open time increased with cytosolic Ca2+ (Cacyt) or caffeine, whereas followers flicker frequency was Cacyt independent and more sensitive to inhibition by cytosolic Mg2+. Coupled events were insensitive to varying lumen-to-cytosol Ca2+ fluxes from ∼1 to 8 pA, which does not corroborate coupling of neighboring RyR1 by local Ca2+-induced Ca2+ release. However, coupling requires specific Calum sites, as it was lost when Calum was replaced by luminal Ba2+ or Mg2+. In summary, coupled events reveal complex interactions among heterogeneous RyR1, differentially modulated by cytosolic ATP/Mg2+, Cacyt, and Calum, which under cell-like ionic conditions may parallel synchronous RyR1 gating during Ca2+ sparks. PMID:22785120

Unifying Gate Synthesis and Magic State Distillation.

PubMed

Campbell, Earl T; Howard, Mark

2017-02-10

The leading paradigm for performing a computation on quantum memories can be encapsulated as distill-then-synthesize. Initially, one performs several rounds of distillation to create high-fidelity magic states that provide one good T gate, an essential quantum logic gate. Subsequently, gate synthesis intersperses many T gates with Clifford gates to realize a desired circuit. We introduce a unified framework that implements one round of distillation and multiquibit gate synthesis in a single step. Typically, our method uses the same number of T gates as conventional synthesis but with the added benefit of quadratic error suppression. Because of this, one less round of magic state distillation needs to be performed, leading to significant resource savings.

Simulation and video animation of canal flushing created by a tide gate

USGS Publications Warehouse

Schoellhamer, David H.

1988-01-01

A tide-gate algorithm was added to a one-dimensional unsteady flow model that was calibrated, verified, and used to determine the locations of as many as five tide gates that would maximize flushing in two canal systems. Results from the flow model were used to run a branched Lagrangian transport model to simulate the flushing of a conservative constituent from the canal systems both with and without tide gates. A tide gate produces a part-time riverine flow through the canal system that improves flushing along the flow path created by the tide gate. Flushing with no tide gates and with a single optimally located tide gate are shown with a video animation.

Parallel Transport Quantum Logic Gates with Trapped Ions.

PubMed

de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

2016-02-26

We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

Processing multiphoton states through operation on a single photon: Methods and applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin Qing; He Bing; Bergou, Janos A.

2009-10-15

Multiphoton states are widely applied in quantum information technology. By the methods presented in this paper, the structure of a multiphoton state in the form of multiple single-photon qubit products can be mapped to a single-photon qudit, which could also be in a separable product with other photons. This makes possible the manipulation of such multiphoton states by processing single-photon states. The optical realization of unknown qubit discrimination [B. He, J. A. Bergou, and Y.-H. Ren, Phys. Rev. A 76, 032301 (2007)] is simplified with the transformation methods. Another application is the construction of quantum logic gates, where the inversemore » transformations back to the input state spaces are also necessary. We especially show that the modified setups to implement the transformations can realize the deterministic multicontrol gates (including Toffoli gate) operating directly on the products of single-photon qubits.« less

A mechanism for acetylcholine receptor gating based on structure, coupling, phi, and flip

PubMed Central

Gupta, Shaweta; Chakraborty, Srirupa; Vij, Ridhima

2017-01-01

Nicotinic acetylcholine receptors are allosteric proteins that generate membrane currents by isomerizing (“gating”) between resting and active conformations under the influence of neurotransmitters. Here, to explore the mechanisms that link the transmitter-binding sites (TBSs) with the distant gate, we use mutant cycle analyses to measure coupling between residue pairs, phi value analyses to sequence domain rearrangements, and current simulations to reproduce a microsecond shut component (“flip”) apparent in single-channel recordings. Significant interactions between amino acids separated by >15 Å are rare; an exception is between the αM2–M3 linkers and the TBSs that are ∼30 Å apart. Linker residues also make significant, local interactions within and between subunits. Phi value analyses indicate that without agonists, the linker is the first region in the protein to reach the gating transition state. Together, the phi pattern and flip component suggest that a complete, resting↔active allosteric transition involves passage through four brief intermediate states, with brief shut events arising from sojourns in all or a subset. We derive energy landscapes for gating with and without agonists, and propose a structure-based model in which resting→active starts with spontaneous rearrangements of the M2–M3 linkers and TBSs. These conformational changes stabilize a twisted extracellular domain to promote transmembrane helix tilting, gate dilation, and the formation of a “bubble” that collapses to initiate ion conduction. The energy landscapes suggest that twisting is the most energetically unfavorable step in the resting→active conformational change and that the rate-limiting step in the reverse process is bubble formation. PMID:27932572

Auditory inhibitory gating in medial prefrontal cortex: Single unit and local field potential analysis.

PubMed

Mears, R P; Klein, A C; Cromwell, H C

2006-08-11

Medial prefrontal cortex is a crucial region involved in inhibitory processes. Damage to the medial prefrontal cortex can lead to loss of normal inhibitory control over motor, sensory, emotional and cognitive functions. The goal of the present study was to examine the basic properties of inhibitory gating in this brain region in rats. Inhibitory gating has recently been proposed as a neurophysiological assay for sensory filters in higher brain regions that potentially enable or disable information throughput. This perspective has important clinical relevance due to the findings that gating is dramatically impaired in individuals with emotional and cognitive impairments (i.e. schizophrenia). We used the standard inhibitory gating two-tone paradigm with a 500 ms interval between tones and a 10 s interval between tone pairs. We recorded both single unit and local field potentials from chronic microwire arrays implanted in the medial prefrontal cortex. We investigated short-term (within session) and long-term (between session) variability of auditory gating and additionally examined how altering the interval between the tones influenced the potency of the inhibition. The local field potentials displayed greater variability with a reduction in the amplitudes of the tone responses over both the short and long-term time windows. The decrease across sessions was most intense for the second tone response (test tone) leading to a more robust gating (lower T/C ratio). Surprisingly, single unit responses of different varieties retained similar levels of auditory responsiveness and inhibition in both the short and long-term analysis. Neural inhibition decreased monotonically related to the increase in intertone interval. This change in gating was most consistent in the local field potentials. Subsets of single unit responses did not show the lack of inhibition even for the longer intertone intervals tested (4 s interval). These findings support the idea that the medial prefrontal cortex is an important site where early inhibitory functions reside and potentially mediate psychological processes.

Protein Logic: A Statistical Mechanical Study of Signal Integration at the Single-Molecule Level

PubMed Central

de Ronde, Wiet; Rein ten Wolde, Pieter; Mugler, Andrew

2012-01-01

Information processing and decision-making is based upon logic operations, which in cellular networks has been well characterized at the level of transcription. In recent years, however, both experimentalists and theorists have begun to appreciate that cellular decision-making can also be performed at the level of a single protein, giving rise to the notion of protein logic. Here we systematically explore protein logic using a well-known statistical mechanical model. As an example system, we focus on receptors that bind either one or two ligands, and their associated dimers. Notably, we find that a single heterodimer can realize any of the 16 possible logic gates, including the XOR gate, by variation of biochemical parameters. We then introduce what to our knowledge is a novel idea: that a set of receptors with fixed parameters can encode functionally unique logic gates simply by forming different dimeric combinations. An exhaustive search reveals that the simplest set of receptors (two single-ligand receptors and one double-ligand receptor) can realize several different groups of three unique gates, a result for which the parametric analysis of single receptors and dimers provides a clear interpretation. Both results underscore the surprising functional freedom readily available to cells at the single-protein level. PMID:23009860

SRAM Based Re-programmable FPGA for Space Applications

NASA Technical Reports Server (NTRS)

Wang, J. J.; Sun, J. S.; Cronquist, B. E.; McCollum, J. L.; Speers, T. M.; Plants, W. C.; Katz, R. B.

1999-01-01

An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 micrometers CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor de-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I(sub CC)) measured indicates a device tolerance of approximately 50krad(Si).

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Technical Reports Server (NTRS)

Jones, C. W. (Editor)

1985-01-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Astrophysics Data System (ADS)

Jones, C. W.

1985-12-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Room temperature high-fidelity holonomic single-qubit gate on a solid-state spin.

PubMed

Arroyo-Camejo, Silvia; Lazariev, Andrii; Hell, Stefan W; Balasubramanian, Gopalakrishnan

2014-09-12

At its most fundamental level, circuit-based quantum computation relies on the application of controlled phase shift operations on quantum registers. While these operations are generally compromised by noise and imperfections, quantum gates based on geometric phase shifts can provide intrinsically fault-tolerant quantum computing. Here we demonstrate the high-fidelity realization of a recently proposed fast (non-adiabatic) and universal (non-Abelian) holonomic single-qubit gate, using an individual solid-state spin qubit under ambient conditions. This fault-tolerant quantum gate provides an elegant means for achieving the fidelity threshold indispensable for implementing quantum error correction protocols. Since we employ a spin qubit associated with a nitrogen-vacancy colour centre in diamond, this system is based on integrable and scalable hardware exhibiting strong analogy to current silicon technology. This quantum gate realization is a promising step towards viable, fault-tolerant quantum computing under ambient conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Anh T.; Kim, Eugene H.; Ulloa, Sergio E.

Single-atom gating, achieved by manipulation of adatoms on a surface, has been shown in experiments to allow precise control over superposition of electronic states in quantum corrals. Using a Green's function approach, we demonstrate theoretically that such atom gating can also be used to control the coupling between magnetic degrees of freedom in these systems. Atomic gating enables control not only on the direct interaction between magnetic adatoms, but also over superpositions of many-body states which can then control long distance interactions. We illustrate this effect by considering the competition between direct exchange between magnetic impurities and the Kondo screeningmore » mediated by the host electrons, and how this is affected by gating. These results suggest that both magnetic and nonmagnetic single-atom gating may be used to investigate magnetic impurity systems with tailored interactions, and may allow the control of entanglement of different spin states.« less

Driving qubit phase gates with sech shaped pulses

NASA Astrophysics Data System (ADS)

Long, Junling; Ku, Hsiang-Sheng; Wu, Xian; Lake, Russell; Barnes, Edwin; Economou, Sophia; Pappas, David

As shown in 1932 by Rozen and Zener, the Rabi model has a unique solution whereby, for a given pulse length or amplitude, a sech(t/sigma) shaped pulse can be used to drive complete oscillations around the Bloch sphere that are independent of detuning with only a resultant detuning-dependent phase accumulation. Using this property, single qubit phase gates and two-qubit CZ gates have been proposed. In this work we explore the effect of different drive pulse shapes, i.e. square, Gaussian, and sech, as a function of detuning for Rabi oscillations of a superconducting transmon qubit. An arbitrary, single-qubit phase gate is demonstrated with the sech(t/sigma) pulse, and full tomography is performed to extract the fidelity. This is the first step towards high fidelity, low leakage two qubit CZ gates, and illustrates the efficacy of using analytic solutions of the qubit drive prior to optimal pulse shaping.

Experimental investigation of a four-qubit linear-optical quantum logic circuit

PubMed Central

Stárek, R.; Mičuda, M.; Miková, M.; Straka, I.; Dušek, M.; Ježek, M.; Fiurášek, J.

2016-01-01

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C3Z gate and several two-qubit and single-qubit gates. The C3Z gate introduces a sign flip if and only if all four qubits are in the computational state |1〉. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses. PMID:27647176

Quantum phase gate based on electromagnetically induced transparency in optical cavities

NASA Astrophysics Data System (ADS)

Borges, Halyne S.; Villas-Bôas, Celso J.

2016-11-01

We theoretically investigate the implementation of a quantum controlled-phase gate in a system constituted by a single atom inside an optical cavity, based on the electromagnetically induced transparency effect. First we show that a probe pulse can experience a π phase shift due to the presence or absence of a classical control field. Considering the interplay of the cavity-EIT effect and the quantum memory process, we demonstrated a controlled-phase gate between two single photons. To this end, first one needs to store a (control) photon in the ground atomic states. In the following, a second (target) photon must impinge on the atom-cavity system. Depending on the atomic state, this second photon will be either transmitted or reflected, acquiring different phase shifts. This protocol can then be easily extended to multiphoton systems, i.e., keeping the control photon stored, it may induce phase shifts in several single photons, thus enabling the generation of multipartite entangled states. We explore the relevant parameter space in the atom-cavity system that allows the implementation of quantum controlled-phase gates using the recent technologies. In particular, we have found a lower bound for the cooperativity of the atom-cavity system which enables the implementation of phase shift on single photons. The induced shift on the phase of a photonic qubit and the controlled-phase gate between single photons, combined with optical devices, enable one to perform universal quantum computation.

Respiratory-gated electrical impedance tomography: a potential technique for quantifying stroke volume

NASA Astrophysics Data System (ADS)

Arshad, Saaid H.; Murphy, Ethan K.; Halter, Ryan J.

2016-03-01

Telemonitoring is becoming increasingly important as the proportion of the population living with cardiovascular disease (CVD) increases. Currently used health parameters in the suite of telemonitoring tools lack the sensitivity and specificity to accurately predict heart failure events, forcing physicians to play a reactive versus proactive role in patient care. A novel cardiac output (CO) monitoring device is proposed that leverages a custom smart phone application and a wearable electrical impedance tomography (EIT) system. The purpose of this work is to explore the potential of using respiratory-gated EIT to quantify stroke volume (SV) and assess its feasibility using real data. Simulations were carried out using the 4D XCAT model to create anatomically realistic meshes and electrical conductivity profiles representing the human thorax and the intrathoracic tissue. A single 5-second period respiration cycle with chest/lung expansion was modeled with end-diastole (ED) and end-systole (ES) heart volumes to evaluate how effective EIT-based conductivity changes represent clinically significant differences in SV. After establishing a correlation between conductivity changes and SV, the applicability of the respiratory-gated EIT was refined using data from the PhysioNet database to estimate the number of useful end-diastole (ED) and end-systole (ES) heart events attained over a 3.3 minute period. The area associated with conductivity changes was found to correlate to SV with a correlation coefficient of 0.92. A window of 12.5% around peak exhalation was found to be the optimal phase of the respiratory cycle from which to record EIT data. Within this window, ~47 useable ED and ES were found with a standard deviation of 28 using 3.3 minutes of data for 20 patients.

A neural mechanism for background information-gated learning based on axonal-dendritic overlaps.

PubMed

Mainetti, Matteo; Ascoli, Giorgio A

2015-03-01

Experiencing certain events triggers the acquisition of new memories. Although necessary, however, actual experience is not sufficient for memory formation. One-trial learning is also gated by knowledge of appropriate background information to make sense of the experienced occurrence. Strong neurobiological evidence suggests that long-term memory storage involves formation of new synapses. On the short time scale, this form of structural plasticity requires that the axon of the pre-synaptic neuron be physically proximal to the dendrite of the post-synaptic neuron. We surmise that such "axonal-dendritic overlap" (ADO) constitutes the neural correlate of background information-gated (BIG) learning. The hypothesis is based on a fundamental neuroanatomical constraint: an axon must pass close to the dendrites that are near other neurons it contacts. The topographic organization of the mammalian cortex ensures that nearby neurons encode related information. Using neural network simulations, we demonstrate that ADO is a suitable mechanism for BIG learning. We model knowledge as associations between terms, concepts or indivisible units of thought via directed graphs. The simplest instantiation encodes each concept by single neurons. Results are then generalized to cell assemblies. The proposed mechanism results in learning real associations better than spurious co-occurrences, providing definitive cognitive advantages.

A Neural Mechanism for Background Information-Gated Learning Based on Axonal-Dendritic Overlaps

PubMed Central

Mainetti, Matteo; Ascoli, Giorgio A.

2015-01-01

Experiencing certain events triggers the acquisition of new memories. Although necessary, however, actual experience is not sufficient for memory formation. One-trial learning is also gated by knowledge of appropriate background information to make sense of the experienced occurrence. Strong neurobiological evidence suggests that long-term memory storage involves formation of new synapses. On the short time scale, this form of structural plasticity requires that the axon of the pre-synaptic neuron be physically proximal to the dendrite of the post-synaptic neuron. We surmise that such “axonal-dendritic overlap” (ADO) constitutes the neural correlate of background information-gated (BIG) learning. The hypothesis is based on a fundamental neuroanatomical constraint: an axon must pass close to the dendrites that are near other neurons it contacts. The topographic organization of the mammalian cortex ensures that nearby neurons encode related information. Using neural network simulations, we demonstrate that ADO is a suitable mechanism for BIG learning. We model knowledge as associations between terms, concepts or indivisible units of thought via directed graphs. The simplest instantiation encodes each concept by single neurons. Results are then generalized to cell assemblies. The proposed mechanism results in learning real associations better than spurious co-occurrences, providing definitive cognitive advantages. PMID:25767887

Gating of tactile information through gamma band during passive arm movement in awake primates

PubMed Central

Song, Weiguo; Francis, Joseph T.

2015-01-01

To make precise and prompt action in a dynamic environment, the sensorimotor system needs to integrate all related information. The inflow of somatosensory information to the cerebral cortex is regulated and mostly suppressed by movement, which is commonly referred to as sensory gating or gating. Sensory gating plays an important role in preventing redundant information from reaching the cortex, which should be considered when designing somatosensory neuroprosthetics. Gating can occur at several levels within the sensorimotor pathway, while the underlying mechanism is not yet fully understood. The average sensory evoked potential is commonly used to assess sensory information processing, however the assumption of a stereotyped response to each stimulus is still an open question. Event related spectral perturbation (ERSP), which is the power spectrum after time-frequency decomposition on single trial evoked potentials (total power), could overcome this limitation of averaging and provide additional information for understanding the underlying mechanism. To this aim, neural activities in primary somatosensory cortex (S1), primary motor cortex (M1), and ventral posterolateral (VPL) nucleus of thalamus were recorded simultaneously in two areas (S1 and M1 or S1 and VPL) during passive arm movement and rest in awake monkeys. Our results showed that neural activity at different recording areas demonstrated specific and unique response frequency characteristics. Tactile input induced early high frequency responses followed by low frequency oscillations within sensorimotor circuits, and passive movement suppressed these oscillations either in a phase-locked or non-phase-locked manner. Sensory gating by movement was non-phase-locked in M1, and complex in sensory areas. VPL showed gating of non-phase-locked at gamma band and mix of phase-locked and non-phase-locked at low frequency, while S1 showed gating of phase-locked and non-phase-locked at gamma band and an early phase-locked elevation followed by non-phase-locked gating at low frequency. Granger causality (GC) analysis showed bidirectional coupling between VPL and S1, while GC between M1 and S1 was not responsive to tactile input. Thus, these results suggest that tactile input is dominantly transmitted along the ascending direction from VPL to S1, and the sensory input is suppressed during movement through a bottom-up strategy within the gamma-band during passive movement. PMID:26578892

Properties of glutamate-gated ion channels in horizontal cells of the perch retina.

PubMed

Schmidt, K F

1997-08-01

The effect of two different concentrations of L-glutamate and kainate on the gating kinetics of amino acid-sensitive non-NMDA channels were studied in cultured teleost retinal horizontal cells by single-channel recording and by noise analysis of whole-cell currents. When the glutamate agonist kainate was applied clearly parabolic mean-variance relations of whole-cell membrane currents (up to 3000 pA) indicated that this agonist was acting on one type of channels with a conductance of 5-10 pS. The cells were less sensitive when L-glutamate was used as the agonist and in most cases whole-cell currents amounted to less than 200 pA. The mean-variance relation of glutamate induced currents was complex, indicating that more than one type of channel opening could be involved. Power spectra of whole-cell currents were fitted with two Lorentzians with time constants of approx. 1 and 5-20 msec. Effects on amplitudes and time constants of agonist concentrations are demonstrated. Two categories of unitary events with mean open times of approx. 1 and 7 msec and conductances of approx. 7 and 12 pS, respectively, were obtained in single-channel recordings from cell-attached patches at different concentrations of glutamate in the pipette.

ECL gate array with integrated PLL-based clock recovery and synthesis for high-speed data and telecom applications

NASA Astrophysics Data System (ADS)

Rosky, David S.; Coy, Bruce H.; Friedmann, Marc D.

1992-03-01

A 2500 gate mixed signal gate array has been developed that integrates custom PLL-based clock recovery and clock synthesis functions with 2500 gates of configurable logic cells to provide a single chip solution for 200 - 1244 MHz fiber based digital interface applications. By customizing the digital logic cells, any of the popular telecom and datacom standards may be implemented.

Gating of human ClC-2 chloride channels and regulation by carboxy-terminal domains

PubMed Central

Garcia-Olivares, Jennie; Alekov, Alexi; Boroumand, Mohammad Reza; Begemann, Birgit; Hidalgo, Patricia; Fahlke, Christoph

2008-01-01

Eukaryotic ClC channels are dimeric proteins with each subunit forming an individual protopore. Single protopores are gated by a fast gate, whereas the slow gate is assumed to control both protopores through a cooperative movement of the two carboxy-terminal domains. We here study the role of the carboxy-terminal domain in modulating fast and slow gating of human ClC-2 channels, a ubiquitously expressed ClC-type chloride channel involved in transepithelial solute transport and in neuronal chloride homeostasis. Partial truncation of the carboxy-terminus abolishes function of ClC-2 by locking the channel in a closed position. However, unlike other isoforms, its complete removal preserves function of ClC-2. ClC-2 channels without the carboxy-terminus exhibit fast and slow gates that activate and deactivate significantly faster than in WT channels. In contrast to the prevalent view, a single carboxy-terminus suffices for normal slow gating, whereas both domains regulate fast gating of individual protopores. Our findings demonstrate that the carboxy-terminus is not strictly required for slow gating and that the cooperative gating resides in other regions of the channel protein. ClC-2 is expressed in neurons and believed to open at negative potentials and increased internal chloride concentrations after intense synaptic activity. We propose that the function of the ClC-2 carboxy-terminus is to slow down the time course of channel activation in order to stabilize neuronal excitability PMID:18801843

Gating of human ClC-2 chloride channels and regulation by carboxy-terminal domains.

PubMed

Garcia-Olivares, Jennie; Alekov, Alexi; Boroumand, Mohammad Reza; Begemann, Birgit; Hidalgo, Patricia; Fahlke, Christoph

2008-11-15

Eukaryotic ClC channels are dimeric proteins with each subunit forming an individual protopore. Single protopores are gated by a fast gate, whereas the slow gate is assumed to control both protopores through a cooperative movement of the two carboxy-terminal domains. We here study the role of the carboxy-terminal domain in modulating fast and slow gating of human ClC-2 channels, a ubiquitously expressed ClC-type chloride channel involved in transepithelial solute transport and in neuronal chloride homeostasis. Partial truncation of the carboxy-terminus abolishes function of ClC-2 by locking the channel in a closed position. However, unlike other isoforms, its complete removal preserves function of ClC-2. ClC-2 channels without the carboxy-terminus exhibit fast and slow gates that activate and deactivate significantly faster than in WT channels. In contrast to the prevalent view, a single carboxy-terminus suffices for normal slow gating, whereas both domains regulate fast gating of individual protopores. Our findings demonstrate that the carboxy-terminus is not strictly required for slow gating and that the cooperative gating resides in other regions of the channel protein. ClC-2 is expressed in neurons and believed to open at negative potentials and increased internal chloride concentrations after intense synaptic activity. We propose that the function of the ClC-2 carboxy-terminus is to slow down the time course of channel activation in order to stabilize neuronal excitability.

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2011-01-01

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Investigation of field induced trapping on floating gates

NASA Technical Reports Server (NTRS)

Gosney, W. M.

1975-01-01

The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

Data-driven event-by-event respiratory motion correction using TOF PET list-mode centroid of distribution

NASA Astrophysics Data System (ADS)

Ren, Silin; Jin, Xiao; Chan, Chung; Jian, Yiqiang; Mulnix, Tim; Liu, Chi; E Carson, Richard

2017-06-01

Data-driven respiratory gating techniques were developed to correct for respiratory motion in PET studies, without the help of external motion tracking systems. Due to the greatly increased image noise in gated reconstructions, it is desirable to develop a data-driven event-by-event respiratory motion correction method. In this study, using the Centroid-of-distribution (COD) algorithm, we established a data-driven event-by-event respiratory motion correction technique using TOF PET list-mode data, and investigated its performance by comparing with an external system-based correction method. Ten human scans with the pancreatic β-cell tracer 18F-FP-(+)-DTBZ were employed. Data-driven respiratory motions in superior-inferior (SI) and anterior-posterior (AP) directions were first determined by computing the centroid of all radioactive events during each short time frame with further processing. The Anzai belt system was employed to record respiratory motion in all studies. COD traces in both SI and AP directions were first compared with Anzai traces by computing the Pearson correlation coefficients. Then, respiratory gated reconstructions based on either COD or Anzai traces were performed to evaluate their relative performance in capturing respiratory motion. Finally, based on correlations of displacements of organ locations in all directions and COD information, continuous 3D internal organ motion in SI and AP directions was calculated based on COD traces to guide event-by-event respiratory motion correction in the MOLAR reconstruction framework. Continuous respiratory correction results based on COD were compared with that based on Anzai, and without motion correction. Data-driven COD traces showed a good correlation with Anzai in both SI and AP directions for the majority of studies, with correlation coefficients ranging from 63% to 89%. Based on the determined respiratory displacements of pancreas between end-expiration and end-inspiration from gated reconstructions, there was no significant difference between COD-based and Anzai-based methods. Finally, data-driven COD-based event-by-event respiratory motion correction yielded comparable results to that based on Anzai respiratory traces, in terms of contrast recovery and reduced motion-induced blur. Data-driven event-by-event respiratory motion correction using COD showed significant image quality improvement compared with reconstructions with no motion correction, and gave comparable results to the Anzai-based method.

Data-driven event-by-event respiratory motion correction using TOF PET list-mode centroid of distribution.

PubMed

Ren, Silin; Jin, Xiao; Chan, Chung; Jian, Yiqiang; Mulnix, Tim; Liu, Chi; Carson, Richard E

2017-06-21

Data-driven respiratory gating techniques were developed to correct for respiratory motion in PET studies, without the help of external motion tracking systems. Due to the greatly increased image noise in gated reconstructions, it is desirable to develop a data-driven event-by-event respiratory motion correction method. In this study, using the Centroid-of-distribution (COD) algorithm, we established a data-driven event-by-event respiratory motion correction technique using TOF PET list-mode data, and investigated its performance by comparing with an external system-based correction method. Ten human scans with the pancreatic β-cell tracer 18 F-FP-(+)-DTBZ were employed. Data-driven respiratory motions in superior-inferior (SI) and anterior-posterior (AP) directions were first determined by computing the centroid of all radioactive events during each short time frame with further processing. The Anzai belt system was employed to record respiratory motion in all studies. COD traces in both SI and AP directions were first compared with Anzai traces by computing the Pearson correlation coefficients. Then, respiratory gated reconstructions based on either COD or Anzai traces were performed to evaluate their relative performance in capturing respiratory motion. Finally, based on correlations of displacements of organ locations in all directions and COD information, continuous 3D internal organ motion in SI and AP directions was calculated based on COD traces to guide event-by-event respiratory motion correction in the MOLAR reconstruction framework. Continuous respiratory correction results based on COD were compared with that based on Anzai, and without motion correction. Data-driven COD traces showed a good correlation with Anzai in both SI and AP directions for the majority of studies, with correlation coefficients ranging from 63% to 89%. Based on the determined respiratory displacements of pancreas between end-expiration and end-inspiration from gated reconstructions, there was no significant difference between COD-based and Anzai-based methods. Finally, data-driven COD-based event-by-event respiratory motion correction yielded comparable results to that based on Anzai respiratory traces, in terms of contrast recovery and reduced motion-induced blur. Data-driven event-by-event respiratory motion correction using COD showed significant image quality improvement compared with reconstructions with no motion correction, and gave comparable results to the Anzai-based method.

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Rooting through the Past

ERIC Educational Resources Information Center

Dodson, Angela P.

2012-01-01

Henry Louis Gates Jr., the Harvard professor and cultural critic, has been so prolific as a writer that the idea of fitting his essential works into a single volume of a manageable size seems preposterous. It has been done, however, in the recently published "The Henry Louis Gates, Jr. Reader." The Gates reader contains his favorite stories which…

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balakrishnan, S.; Sankaranarayanan, R.

Nonlocal two-qubit gates are geometrically represented by tetrahedron known as Weyl chamber within which perfect entanglers form a polyhedron. We identify that all edges of the Weyl chamber and polyhedron are formed by single parametric gates. Nonlocal attributes of these edges are characterized using entangling power and local invariants. In particular, SWAP{sup -{alpha}} family of gates with 0{<=}{alpha}{<=}1 constitutes one edge of the Weyl chamber with SWAP{sup -1/2} being the only perfect entangler. Finally, optimal constructions of controlled-NOT using SWAP{sup -1/2} gate and gates belong to three edges of the polyhedron are presented.

Counterfactual Rydberg gate for photons

NASA Astrophysics Data System (ADS)

Garcia-Escartin, Juan Carlos; Chamorro-Posada, Pedro

2012-03-01

Quantum computation with photons requires efficient two-photon gates. We put forward a two-photon entangling gate which uses an intermediate atomic system. The system includes a single Rydberg atom which can switch on and off photon absorption in an ensemble using the dipole blockade. The gate is based in a counterfactual protocol. The mere possibility of an absorption that can only occur with a vanishing probability steers the photons to the desired final state.

Protein logic: a statistical mechanical study of signal integration at the single-molecule level.

PubMed

de Ronde, Wiet; Rein ten Wolde, Pieter; Mugler, Andrew

2012-09-05

Information processing and decision-making is based upon logic operations, which in cellular networks has been well characterized at the level of transcription. In recent years, however, both experimentalists and theorists have begun to appreciate that cellular decision-making can also be performed at the level of a single protein, giving rise to the notion of protein logic. Here we systematically explore protein logic using a well-known statistical mechanical model. As an example system, we focus on receptors that bind either one or two ligands, and their associated dimers. Notably, we find that a single heterodimer can realize any of the 16 possible logic gates, including the XOR gate, by variation of biochemical parameters. We then introduce what to our knowledge is a novel idea: that a set of receptors with fixed parameters can encode functionally unique logic gates simply by forming different dimeric combinations. An exhaustive search reveals that the simplest set of receptors (two single-ligand receptors and one double-ligand receptor) can realize several different groups of three unique gates, a result for which the parametric analysis of single receptors and dimers provides a clear interpretation. Both results underscore the surprising functional freedom readily available to cells at the single-protein level. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Quantum memory and gates using a Λ -type quantum emitter coupled to a chiral waveguide

NASA Astrophysics Data System (ADS)

Li, Tao; Miranowicz, Adam; Hu, Xuedong; Xia, Keyu; Nori, Franco

2018-06-01

By coupling a Λ -type quantum emitter to a chiral waveguide, in which the polarization of a photon is locked to its propagation direction, we propose a controllable photon-emitter interface for quantum networks. We show that this chiral system enables the swap gate and a hybrid-entangling gate between the emitter and a flying single photon. It also allows deterministic storage and retrieval of single-photon states with high fidelities and efficiencies. In short, this chirally coupled emitter-photon interface can be a critical building block toward a large-scale quantum network.

A high-speed tunable beam splitter for feed-forward photonic quantum information processing.

PubMed

Ma, Xiao-Song; Zotter, Stefan; Tetik, Nuray; Qarry, Angie; Jennewein, Thomas; Zeilinger, Anton

2011-11-07

We realize quantum gates for path qubits with a high-speed, polarization-independent and tunable beam splitter. Two electro-optical modulators act in a Mach-Zehnder interferometer as high-speed phase shifters and rapidly tune its splitting ratio. We test its performance with heralded single photons, observing a polarization-independent interference contrast above 95%. The switching time is about 5.6 ns, and a maximal repetition rate is 2.5 MHz. We demonstrate tunable feed-forward operations of a single-qubit gate of path-encoded qubits and a two-qubit gate via measurement-induced interaction between two photons.

Isolated Attosecond Pulse Generation without the Need to Stabilize the Carrier-Envelope Phase of Driving Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gilbertson, Steve; Khan, Sabih D.; Wu Yi

2010-08-27

Single isolated attosecond pulses can be extracted from a pulse train with an ultrafast gate in the generation target. By setting the gate width sufficiently narrow with the generalized double optical gating, we demonstrate that single isolated attosecond pulses can be generated with any arbitrary carrier-envelope phase value of the driving laser. The carrier-envelope phase only affects the photon flux, not the pulse duration or contrast. Our results show that isolated attosecond pulses can be generated using carrier-envelope phase unstabilized 23 fs pulses directly from chirped pulse amplifiers.

Cognitive mechanisms associated with auditory sensory gating

PubMed Central

Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

2016-01-01

Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

Topologically protected gates for quantum computation with non-Abelian anyons in the Pfaffian quantum Hall state

NASA Astrophysics Data System (ADS)

Georgiev, Lachezar S.

2006-12-01

We extend the topological quantum computation scheme using the Pfaffian quantum Hall state, which has been recently proposed by Das Sarma , in a way that might potentially allow for the topologically protected construction of a universal set of quantum gates. We construct, for the first time, a topologically protected controlled-NOT gate, which is entirely based on quasihole braidings of Pfaffian qubits. All single-qubit gates, except for the π/8 gate, are also explicitly implemented by quasihole braidings. Instead of the π/8 gate we try to construct a topologically protected Toffoli gate, in terms of the controlled-phase gate and CNOT or by a braid-group-based controlled-controlled- Z precursor. We also give a topologically protected realization of the Bravyi-Kitaev two-qubit gate g3 .

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Trapped-ion quantum logic gates based on oscillating magnetic fields.

PubMed

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

SU-C-9A-06: The Impact of CT Image Used for Attenuation Correction in 4D-PET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Y; Bowsher, J; Yan, S

2014-06-01

Purpose: To evaluate the appropriateness of using 3D non-gated CT image for attenuation correction (AC) in a 4D-PET (gated PET) imaging protocol used in radiotherapy treatment planning simulation. Methods: The 4D-PET imaging protocol in a Siemens PET/CT simulator (Biograph mCT, Siemens Medical Solutions, Hoffman Estates, IL) was evaluated. CIRS Dynamic Thorax Phantom (CIRS Inc., Norfolk, VA) with a moving glass sphere (8 mL) in the middle of its thorax portion was used in the experiments. The glass was filled with {sup 18}F-FDG and was in a longitudinal motion derived from a real patient breathing pattern. Varian RPM system (Varian Medicalmore » Systems, Palo Alto, CA) was used for respiratory gating. Both phase-gating and amplitude-gating methods were tested. The clinical imaging protocol was modified to use three different CT images for AC in 4D-PET reconstruction: first is to use a single-phase CT image to mimic actual clinical protocol (single-CT-PET); second is to use the average intensity projection CT (AveIP-CT) derived from 4D-CT scanning (AveIP-CT-PET); third is to use 4D-CT image to do the phase-matched AC (phase-matching- PET). Maximum SUV (SUVmax) and volume of the moving target (glass sphere) with threshold of 40% SUVmax were calculated for comparison between 4D-PET images derived with different AC methods. Results: The SUVmax varied 7.3%±6.9% over the breathing cycle in single-CT-PET, compared to 2.5%±2.8% in AveIP-CT-PET and 1.3%±1.2% in phasematching PET. The SUVmax in single-CT-PET differed by up to 15% from those in phase-matching-PET. The target volumes measured from single- CT-PET images also presented variations up to 10% among different phases of 4D PET in both phase-gating and amplitude-gating experiments. Conclusion: Attenuation correction using non-gated CT in 4D-PET imaging is not optimal process for quantitative analysis. Clinical 4D-PET imaging protocols should consider phase-matched 4D-CT image if available to achieve better accuracy.« less

Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

NASA Astrophysics Data System (ADS)

Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

Bioinspired ion-transport properties of solid-state single nanochannels and their applications in sensing.

PubMed

Tian, Ye; Wen, Liping; Hou, Xu; Hou, Guanglei; Jiang, Lei

2012-07-16

Biological ion channels are able to control ion-transport processes precisely because of their intriguing properties, such as selectivity, rectification, and gating. Learning from nature, scientists have developed a promising system--solid-state single nanochannels--to mimic biological ion-transport properties. These nanochannels have many impressive properties, such as excess surface charge, making them selective; the ability to be produced or modified asymmetrically, endowing them with rectification; and chemical reactivity of the inner surface, imparting them with desired gating properties. Based on these unique characteristics, solid-state single nanochannels have been explored in various applications, such as sensing. In this context, we summarize recent developments of bioinspired solid-state single nanochannels with ion-transport properties that resemble their biological counterparts, including selectivity, rectification, and gating; their applications in sensing are also introduced briefly. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modal gating of muscle nicotinic acetylcholine receptors

NASA Astrophysics Data System (ADS)

Vij, Ridhima

Many ion channels exhibit multiple patterns of kinetic activity in single-channel currents. This behavior is rare in WT mouse muscle nicotinic acetylcholine receptors (AChRs), where A2C↔A2O gating events are well-described by single exponentials. Also, single-channel open probability (PO) is essentially homogeneous at a given agonist concentration in the WT receptors. Here I report that perturbations of almost all the residues in loop C (alpha188-alpha199, at the agonist binding site) generate heterogeneity in PO ('modes'). Such unsettled activity was apparent with an alanine substitution at all positions in loop C (except alphaY190 and alphaY198) and with different side chain substitutions at alphaP197 for both adult- and fetal-type AChRs. I used single channel electrophysiology along with site-directed mutagenesis to study modal gating in AChRs consequent to mutations/deletions in loop C. The multiple patterns of kinetic activity arose from the difference in agonist affinity rather than in intrinsic AChR gating. Out of the four different agonists used to study the modal behavior, acetylcholine (ACh) showed a higher degree of kinetic heterogeneity compared to others. The time constant for switching between modes was long (~mins), suggesting that they arise from alternative, stable protein conformations. By studying AChRs having only 1 functional binding site, I attempted to find the source of the affinity difference, which was traced mainly to the alphadelta agonist site. Affinity at the neurotransmitter binding site is mainly determined by a core of five aromatic residues (alphaY93, alphaW149, alphaY190, alphaY198 and deltaW57). Phenylalanine substitutions at all aromatic residues except alphaY93 resulted in elimination of modes. Modes were also eliminated by alanine mutation at deltaW57 on the complementary side but not at other aromatics. Also, by substituting four gamma subunit residues into the delta subunit on the complementary beta sheet, I found that modes were reduced. Based on our results, we propose that WT loop C has an important role in determining resting affinity, in part by making stable interactions with the complementary surface of the alphadelta binding pocket. We suggest a possible structural basis for the fluctuations caused by loop C perturbations and propose that at the alphadelta agonist binding site, both loop C and the complementary subunit surface can adopt alternative conformations and interact with each other with respect to the aromatic core, to cause the variations in affinity.

Optimization of single shot 3D breath-hold non-enhanced MR angiography of the renal arteries.

PubMed

Tan, Huan; Koktzoglou, Ioannis; Glielmi, Christopher; Galizia, Mauricio; Edelman, Robert R

2012-05-19

Cardiac and navigator-gated, inversion-prepared non-enhanced magnetic resonance angiography techniques can accurately depict the renal arteries without the need for contrast administration. However, the scan time and effectiveness of navigator-gated techniques depend on the subject respiratory pattern, which at times results in excessively prolonged scan times or suboptimal image quality. A single-shot 3D magnetization-prepared steady-state free precession technique was implemented to allow the full extent of the renal arteries to be depicted within a single breath-hold. Technical optimization of the breath-hold technique was performed with fourteen healthy volunteers. An alternative magnetization preparation scheme was tested to maximize inflow signal. Quantitative and qualitative comparisons were made between the breath-hold technique and the clinically accepted navigator-gated technique in both volunteers and patients on a 1.5 T scanner. The breath-hold technique provided an average of seven fold reduction in imaging time, without significant loss of image quality. Comparable single-to-noise and contrast-to-noise ratios of intra- and extra-renal arteries were found between the breath-hold and the navigator-gated techniques in volunteers. Furthermore, the breath-hold technique demonstrated good image quality for diagnostic purposes in a small number of patients in a pilot study. The single-shot, breath-hold technique offers an alternative to navigator-gated methods for non-enhanced renal magnetic resonance angiography. The initial results suggest a potential supplementary clinical role for the breath-hold technique in the evaluation of suspected renal artery diseases.

Dopant-controlled single-electron pumping through a metallic island

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenz, Tobias, E-mail: tobias.wenz@ptb.de; Hohls, Frank, E-mail: frank.hohls@ptb.de; Jehl, Xavier

We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.

PubMed

Yi, H T; Chen, Y; Czelen, K; Podzorov, V

2011-12-22

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Heralded quantum controlled-phase gates with dissipative dynamics in macroscopically distant resonators

NASA Astrophysics Data System (ADS)

Qin, Wei; Wang, Xin; Miranowicz, Adam; Zhong, Zhirong; Nori, Franco

2017-07-01

Heralded near-deterministic multiqubit controlled-phase gates with integrated error detection have recently been proposed by Borregaard et al. [Phys. Rev. Lett. 114, 110502 (2015), 10.1103/PhysRevLett.114.110502]. This protocol is based on a single four-level atom (a heralding quartit) and N three-level atoms (operational qutrits) coupled to a single-resonator mode acting as a cavity bus. Here we generalize this method for two distant resonators without the cavity bus between the heralding and operational atoms. Specifically, we analyze the two-qubit controlled-Z gate and its multiqubit-controlled generalization (i.e., a Toffoli-like gate) acting on the two-lowest levels of N qutrits inside one resonator, with their successful actions being heralded by an auxiliary microwave-driven quartit inside the other resonator. Moreover, we propose a circuit-quantum-electrodynamics realization of the protocol with flux and phase qudits in linearly coupled transmission-line resonators with dissipation. These methods offer a quadratic fidelity improvement compared to cavity-assisted deterministic gates.

AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster

NASA Astrophysics Data System (ADS)

Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young

2017-08-01

This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.

Identifying mitosis deep in tissue using dynamic light scattering fluctuation spectroscopy

NASA Astrophysics Data System (ADS)

An, Ran; Jeong, Kwan; Turek, John; Nolte, David

2012-03-01

In the cell cycle, mitosis is the most dramatic phase, especially in Telophase and Cytokinesis. For single cells and cell monolayer, there are precise microscopic studies of mitosis, while for 3-D tissue such as tumor spheroids the light signal is obscured by the high background of diffusely scattered light. Therefore, the mitosis phase cannot be detected deep inside 3-D tissue using conventional microscopic techniques. In this work, we detect mitosis in living tissue using Tissue Dynamic Imaging (TDI). We trace depth-gated dynamic speckles from a tumor spheroid (up to 1mm in diameter) using coherence-gated digital holography imaging. Frequency-versus-time spectrograms depend on specific types of perturbation such as cell shape change, membrane undulation and cell organelles movements. By using these spectral responses as functional finger prints, we can identify mitosis events from different voxels at a specified depth inside tumor spheroids. By performing B-scans of the tumor spheroid, we generate 3-D mitosis maps (or movies) for the entire tumor spheroids. We show that for healthy tumor spheroids, the mitosis events only happen within the proliferating shell. We also compare results when anti-cancer drugs are applied to arrest, release and synchronize mitosis. This shows the application of TDI for drug screening. The technique can identify and monitor complex motilities inside 3-D tissue with a strong potential for drug diagnosis and developmental biology studies.

Robust fluoroscopic respiratory gating for lung cancer radiotherapy without implanted fiducial markers

NASA Astrophysics Data System (ADS)

Cui, Ying; Dy, Jennifer G.; Sharp, Greg C.; Alexander, Brian; Jiang, Steve B.

2007-02-01

For gated lung cancer radiotherapy, it is difficult to generate accurate gating signals due to the large uncertainties when using external surrogates and the risk of pneumothorax when using implanted fiducial markers. We have previously investigated and demonstrated the feasibility of generating gating signals using the correlation scores between the reference template image and the fluoroscopic images acquired during the treatment. In this paper, we present an in-depth study, aiming at the improvement of robustness of the algorithm and its validation using multiple sets of patient data. Three different template generating and matching methods have been developed and evaluated: (1) single template method, (2) multiple template method, and (3) template clustering method. Using the fluoroscopic data acquired during patient setup before each fraction of treatment, reference templates are built that represent the tumour position and shape in the gating window, which is assumed to be at the end-of-exhale phase. For the single template method, all the setup images within the gating window are averaged to generate a composite template. For the multiple template method, each setup image in the gating window is considered as a reference template and used to generate an ensemble of correlation scores. All the scores are then combined to generate the gating signal. For the template clustering method, clustering (grouping of similar objects together) is performed to reduce the large number of reference templates into a few representative ones. Each of these methods has been evaluated against the reference gating signal as manually determined by a radiation oncologist. Five patient datasets were used for evaluation. In each case, gated treatments were simulated at both 35% and 50% duty cycles. False positive, negative and total error rates were computed. Experiments show that the single template method is sensitive to noise; the multiple template and clustering methods are more robust to noise due to the smoothing effect of aggregation of correlation scores; and the clustering method results in the best performance in terms of computational efficiency and accuracy.

A modular design of molecular qubits to implement universal quantum gates

PubMed Central

Ferrando-Soria, Jesús; Moreno Pineda, Eufemio; Chiesa, Alessandro; Fernandez, Antonio; Magee, Samantha A.; Carretta, Stefano; Santini, Paolo; Vitorica-Yrezabal, Iñigo J.; Tuna, Floriana; Timco, Grigore A.; McInnes, Eric J.L.; Winpenny, Richard E.P.

2016-01-01

The physical implementation of quantum information processing relies on individual modules—qubits—and operations that modify such modules either individually or in groups—quantum gates. Two examples of gates that entangle pairs of qubits are the controlled NOT-gate (CNOT) gate, which flips the state of one qubit depending on the state of another, and the gate that brings a two-qubit product state into a superposition involving partially swapping the qubit states. Here we show that through supramolecular chemistry a single simple module, molecular {Cr7Ni} rings, which act as the qubits, can be assembled into structures suitable for either the CNOT or gate by choice of linker, and we characterize these structures by electron spin resonance spectroscopy. We introduce two schemes for implementing such gates with these supramolecular assemblies and perform detailed simulations, based on the measured parameters including decoherence, to demonstrate how the gates would operate. PMID:27109358

DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technology. [Dual Injector Floating-gate MOS

NASA Technical Reports Server (NTRS)

Gosney, W. M.

1977-01-01

Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.

Gate control of spin-polarized conductance in alloyed transitional metal nanocontacts

NASA Astrophysics Data System (ADS)

Sivkov, Ilia N.; Brovko, Oleg O.; Rungger, Ivan; Stepanyuk, Valeri S.

2017-03-01

To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic, or molecular quantum dot whose localized states are non-spin-degenerate and can be controlled by an external bias applied via a gate electrode. Adjusting the bias of the gate one can realign those states with respect to the chemical potentials of the leads and thus tailor the spin-polarized transmission properties of the device. Here we show that similar functionality can be achieved in a purely metallic junction comprised of a metallic magnetic chain attached to metallic paramagnetic leads and biased by a gate electrode. Our ab initio calculations of electron transport through mixed Pt-Fe (Fe-Pd and Fe-Rh) atomic chains suspended between Pt (Pd and Rh) electrodes show that spin-polarized confined states of the chain can be shifted by the gate bias causing a change in the relative contributions of majority and minority channels to the nanocontact's conductance. As a result, we observe strong dependence of conductance spin polarization on the applied gate potential. In some cases the spin polarization of conductance can even be reversed in sign upon gate potential application, which is a remarkable and promising trait for spintronic applications.

Modeling of Single Noninactivating Na+ Channels: Evidence for Two Open and Several Fast Inactivated States

PubMed Central

The, Yu-Kai; Fernandes, Jacqueline; Popa, M. Oana; Alekov, Alexi K.; Timmer, Jens; Lerche, Holger

2006-01-01

Voltage-gated Na+ channels play a fundamental role in the excitability of nerve and muscle cells. Defects in fast Na+ channel inactivation can cause hereditary muscle diseases with hyper- or hypoexcitability of the sarcolemma. To explore the kinetics and gating mechanisms of noninactivating muscle Na+ channels on a molecular level, we analyzed single channel currents from wild-type and five mutant Na+ channels. The mutations were localized in different protein regions which have been previously shown to be important for fast inactivation (D3-D4-linker, D3/S4-S5, D4/S4-S5, D4/S6) and exhibited distinct grades of defective fast inactivation with varying levels of persistent Na+ currents caused by late channel reopenings. Different gating schemes were fitted to the data using hidden Markov models with a correction for time interval omission and compared statistically. For all investigated channels including the wild-type, two open states were necessary to describe our data. Whereas one inactivated state was sufficient to fit the single channel behavior of wild-type channels, modeling the mutants with impaired fast inactivation revealed evidence for several inactivated states. We propose a single gating scheme with two open and three inactivated states to describe the behavior of all five examined mutants. This scheme provides a biological interpretation of the collected data, based on previous investigations in voltage-gated Na+ and K+ channels. PMID:16513781

Shaping charge excitations in chiral edge states with a time-dependent gate voltage

NASA Astrophysics Data System (ADS)

Misiorny, Maciej; Fève, Gwendal; Splettstoesser, Janine

2018-02-01

We study a coherent conductor supporting a single edge channel in which alternating current pulses are created by local time-dependent gating and sent on a beam-splitter realized by a quantum point contact. The current response to the gate voltage in this setup is intrinsically linear. Based on a fully self-consistent treatment employing a Floquet scattering theory, we analyze the effect of different voltage shapes and frequencies, as well as the role of the gate geometry on the injected signal. In particular, we highlight the impact of frequency-dependent screening on the process of shaping the current signal. The feasibility of creating true single-particle excitations with this method is confirmed by investigating the suppression of excess noise, which is otherwise created by additional electron-hole pair excitations in the current signal.

Double optical gating of high-order harmonic generation with carrier-envelope phase stabilized lasers.

PubMed

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan; Khan, Sabih D; Shakya, Mahendra M; Moon, Eric; Chang, Zenghu

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2 pi radians.

Double Optical Gating of High-Order Harmonic Generation with Carrier-Envelope Phase Stabilized Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2{pi} radians.

Detection beyond Debye's length with an electrolyte-gated organic field-effect transistor.

PubMed

Palazzo, Gerardo; De Tullio, Donato; Magliulo, Maria; Mallardi, Antonia; Intranuovo, Francesca; Mulla, Mohammad Yusuf; Favia, Pietro; Vikholm-Lundin, Inger; Torsi, Luisa

2015-02-04

Electrolyte-gated organic field-effect transistors are successfully used as biosensors to detect binding events occurring at distances from the transistor electronic channel that are much larger than the Debye length in highly concentrated solutions. The sensing mechanism is mainly capacitive and is due to the formation of Donnan's equilibria within the protein layer, leading to an extra capacitance (CDON) in series to the gating system. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Goos-Hänchen-like shift in biased silicene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Bang-Shan; Wang, Yu, E-mail: ywang@semi.ac.cn; Lou, Yi-Yi

2016-04-28

We have theoretically studied the Goos-Hänchen-like shift of spinor-unpolarized beams tunneling through various gate-biased silicene nanostructures. Following the stationary-phase method, lateral displacement in single-, dual-, and multiple-gated silicene systems has been systematically demonstrated. It is shown for simple single-gated silicene that lateral displacement can be generally enhanced by Fabry-Perot interference, and near the transition point turning on the evanescent mode a very large lateral shift could be observed. For the dual-gated structure, we have also shown the crucial role of localized modes like quantum well states in enhancing the beam lateral displacement, while for the multiple gate-biased systems the resultingmore » superlattice subbands are also favorable for lateral displacement enhancement. Importantly, including the degeneracy-broken mechanisms such as gate-field and magnetic modulations, a fully spinor-resolved beam can be distinguished from the rest counterparts by aligning the incident beam with a proper spinor-resolved transition point, localized state, and subband, all of which can be flexibly modulated via electric means, offering the very desirable strategies to achieve the fully spinor-polarized beam for functional electronic applications.« less

Continuous-variable quantum computation with spatial degrees of freedom of photons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tasca, D. S.; Gomes, R. M.; Toscano, F.

2011-05-15

We discuss the use of the transverse spatial degrees of freedom of photons propagating in the paraxial approximation for continuous-variable information processing. Given the wide variety of linear optical devices available, a diverse range of operations can be performed on the spatial degrees of freedom of single photons. Here we show how to implement a set of continuous quantum logic gates which allow for universal quantum computation. In contrast with the usual quadratures of the electromagnetic field, the entire set of single-photon gates for spatial degrees of freedom does not require optical nonlinearity and, in principle, can be performed withmore » a single device: the spatial light modulator. Nevertheless, nonlinear optical processes, such as four-wave mixing, are needed in the implementation of two-photon gates. The efficiency of these gates is at present very low; however, small-scale investigations of continuous-variable quantum computation are within the reach of current technology. In this regard, we show how novel cluster states for one-way quantum computing can be produced using spontaneous parametric down-conversion.« less

Tl+-induced micros gating of current indicates instability of the MaxiK selectivity filter as caused by ion/pore interaction.

PubMed

Schroeder, Indra; Hansen, Ulf-Peter

2008-04-01

Patch clamp experiments on single MaxiK channels expressed in HEK293 cells were performed at high temporal resolution (50-kHz filter) in asymmetrical solutions containing 0, 25, 50, or 150 mM Tl+ on the luminal or cytosolic side with [K+] + [Tl+] = 150 mM and 150 mM K+ on the other side. Outward current in the presence of cytosolic Tl+ did not show fast gating behavior that was significantly different from that in the absence of Tl+. With luminal Tl+ and at membrane potentials more negative than -40 mV, the single-channel current showed a negative slope resistance concomitantly with a flickery block, resulting in an artificially reduced apparent single-channel current I(app). The analysis of the amplitude histograms by beta distributions enabled the estimation of the true single-channel current and the determination of the rate constants of a simple two-state O-C Markov model for the gating in the bursts. The voltage dependence of the gating ratio R = I(true)/I(app) = (k(CO) + k(OC))/k(CO) could be described by exponential functions with different characteristic voltages above or below 50 mM Tl(+). The true single-channel current I(true) decreased with Tl+ concentrations up to 50 mM and stayed constant thereafter. Different models were considered. The most likely ones related the exponential increase of the gating ratio to ion depletion at the luminal side of the selectivity filter, whereas the influence of [Tl+] on the characteristic voltage of these exponential functions and of the value of I(true) were determined by [Tl+] at the inner side of the selectivity filter or in the cavity.

Efficient Measurement of Quantum Gate Error by Interleaved Randomized Benchmarking

NASA Astrophysics Data System (ADS)

Magesan, Easwar; Gambetta, Jay M.; Johnson, B. R.; Ryan, Colm A.; Chow, Jerry M.; Merkel, Seth T.; da Silva, Marcus P.; Keefe, George A.; Rothwell, Mary B.; Ohki, Thomas A.; Ketchen, Mark B.; Steffen, M.

2012-08-01

We describe a scalable experimental protocol for estimating the average error of individual quantum computational gates. This protocol consists of interleaving random Clifford gates between the gate of interest and provides an estimate as well as theoretical bounds for the average error of the gate under test, so long as the average noise variation over all Clifford gates is small. This technique takes into account both state preparation and measurement errors and is scalable in the number of qubits. We apply this protocol to a superconducting qubit system and find a bounded average error of 0.003 [0,0.016] for the single-qubit gates Xπ/2 and Yπ/2. These bounded values provide better estimates of the average error than those extracted via quantum process tomography.

Bubble gate for in-plane flow control.

PubMed

Oskooei, Ali; Abolhasani, Milad; Günther, Axel

2013-07-07

We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

TU-E-BRB-08: Dual Gated Volumetric Modulated Arc Therapy.

PubMed

Wu, J; Fahimian, B; Wu, H; Xing, L

2012-06-01

Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging treatment modality for Stereotactic Body Radiotherapy (SBRT). However, gating significantly prolongs treatment time. In order to enhance treatment efficiency, a novel dual gated VMAT, in which dynamic arc deliveries are executed sequentially in alternating exhale and inhale phases, is proposed and evaluated experimentally. The essence of dual gated VMAT is to take advantage of the natural pauses that occur at inspiration and exhalation by alternatively delivering the dose at the two phases, instead of the exhale window only. The arc deliveries at the two phases are realized by rotating gantry forward at the exhale window and backward at the inhale in an alternative fashion. Custom XML scripts were developed in Varian's TrueBeam STx Developer Mode to enable dual gated VMAT delivery. RapidArc plans for a lung case were generated for both inhale and exhale phases. The two plans were then combined into a dual gated arc by interleaving the arc treatment nodes of the two RapidArc plans. The dual gated plan was delivered in the development mode of TrueBeam LINAC onto a motion phantom and the delivery was measured by using pinpoint chamber/film/diode array (delta 4). The measured dose distribution was compared with that computed using Eclipse AAA algorithm. The treatment delivery time was recorded and compared with the corresponding single gated plans. Relative to the corresponding single gated delivery, it was found that treatment time efficiency was improved by 95.5% for the case studied here. Pinpoint chamber absolute dose measurement agreed the calculation to within 0.7%. Diode chamber array measurements revealed that 97.5% of measurement points of dual gated RapidArc delivery passed the 3% and 3mm gamma-test criterion. A dual gated VMAT treatment has been developed and implemented successfully with nearly doubled treatment delivery efficiency. © 2012 American Association of Physicists in Medicine.

Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

PubMed

Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

2018-02-01

Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P < 0.001). All Group 1 patients had diagnostic image quality of the aortic wall and left ostium. The MCA significantly improved the image quality of the three main coronary arteries ( P < 0.05). Moreover, per-vessel interpretability improved from 92.3% to 97.1% with the MCA ( P = 0.013). Conclusion Hybrid ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Because advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

Cardiac-gated parametric images from 82 Rb PET from dynamic frames and direct 4D reconstruction.

PubMed

Germino, Mary; Carson, Richard E

2018-02-01

Cardiac perfusion PET data can be reconstructed as a dynamic sequence and kinetic modeling performed to quantify myocardial blood flow, or reconstructed as static gated images to quantify function. Parametric images from dynamic PET are conventionally not gated, to allow use of all events with lower noise. An alternative method for dynamic PET is to incorporate the kinetic model into the reconstruction algorithm itself, bypassing the generation of a time series of emission images and directly producing parametric images. So-called "direct reconstruction" can produce parametric images with lower noise than the conventional method because the noise distribution is more easily modeled in projection space than in image space. In this work, we develop direct reconstruction of cardiac-gated parametric images for 82 Rb PET with an extension of the Parametric Motion compensation OSEM List mode Algorithm for Resolution-recovery reconstruction for the one tissue model (PMOLAR-1T). PMOLAR-1T was extended to accommodate model terms to account for spillover from the left and right ventricles into the myocardium. The algorithm was evaluated on a 4D simulated 82 Rb dataset, including a perfusion defect, as well as a human 82 Rb list mode acquisition. The simulated list mode was subsampled into replicates, each with counts comparable to one gate of a gated acquisition. Parametric images were produced by the indirect (separate reconstructions and modeling) and direct methods for each of eight low-count and eight normal-count replicates of the simulated data, and each of eight cardiac gates for the human data. For the direct method, two initialization schemes were tested: uniform initialization, and initialization with the filtered iteration 1 result of the indirect method. For the human dataset, event-by-event respiratory motion compensation was included. The indirect and direct methods were compared for the simulated dataset in terms of bias and coefficient of variation as a function of iteration. Convergence of direct reconstruction was slow with uniform initialization; lower bias was achieved in fewer iterations by initializing with the filtered indirect iteration 1 images. For most parameters and regions evaluated, the direct method achieved the same or lower absolute bias at matched iteration as the indirect method, with 23%-65% lower noise. Additionally, the direct method gave better contrast between the perfusion defect and surrounding normal tissue than the indirect method. Gated parametric images from the human dataset had comparable relative performance of indirect and direct, in terms of mean parameter values per iteration. Changes in myocardial wall thickness and blood pool size across gates were readily visible in the gated parametric images, with higher contrast between myocardium and left ventricle blood pool in parametric images than gated SUV images. Direct reconstruction can produce parametric images with less noise than the indirect method, opening the potential utility of gated parametric imaging for perfusion PET. © 2017 American Association of Physicists in Medicine.

An ultra low energy biomedical signal processing system operating at near-threshold.

PubMed

Hulzink, J; Konijnenburg, M; Ashouei, M; Breeschoten, A; Berset, T; Huisken, J; Stuyt, J; de Groot, H; Barat, F; David, J; Van Ginderdeuren, J

2011-12-01

This paper presents a voltage-scalable digital signal processing system designed for the use in a wireless sensor node (WSN) for ambulatory monitoring of biomedical signals. To fulfill the requirements of ambulatory monitoring, power consumption, which directly translates to the WSN battery lifetime and size, must be kept as low as possible. The proposed processing platform is an event-driven system with resources to run applications with different degrees of complexity in an energy-aware way. The architecture uses effective system partitioning to enable duty cycling, single instruction multiple data (SIMD) instructions, power gating, voltage scaling, multiple clock domains, multiple voltage domains, and extensive clock gating. It provides an alternative processing platform where the power and performance can be scaled to adapt to the application need. A case study on a continuous wavelet transform (CWT)-based heart-beat detection shows that the platform not only preserves the sensitivity and positive predictivity of the algorithm but also achieves the lowest energy/sample for ElectroCardioGram (ECG) heart-beat detection publicly reported today.

High-performance computing for airborne applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quinn, Heather M; Manuzzato, Andrea; Fairbanks, Tom

2010-06-28

Recently, there has been attempts to move common satellite tasks to unmanned aerial vehicles (UAVs). UAVs are significantly cheaper to buy than satellites and easier to deploy on an as-needed basis. The more benign radiation environment also allows for an aggressive adoption of state-of-the-art commercial computational devices, which increases the amount of data that can be collected. There are a number of commercial computing devices currently available that are well-suited to high-performance computing. These devices range from specialized computational devices, such as field-programmable gate arrays (FPGAs) and digital signal processors (DSPs), to traditional computing platforms, such as microprocessors. Even thoughmore » the radiation environment is relatively benign, these devices could be susceptible to single-event effects. In this paper, we will present radiation data for high-performance computing devices in a accelerated neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a microprocessor. From these results, we found that all of these devices are suitable for many airplane environments without reliability problems.« less

UWB multi-burst transmit driver for averaging receivers

DOEpatents

Dallum, Gregory E

2012-11-20

A multi-burst transmitter for ultra-wideband (UWB) communication systems generates a sequence of precisely spaced RF bursts from a single trigger event. There are two oscillators in the transmitter circuit, a gated burst rate oscillator and a gated RF burst or RF power output oscillator. The burst rate oscillator produces a relatively low frequency, i.e., MHz, square wave output for a selected transmit cycle, and drives the RF burst oscillator, which produces RF bursts of much higher frequency, i.e., GHz, during the transmit cycle. The frequency of the burst rate oscillator sets the spacing of the RF burst packets. The first oscillator output passes through a bias driver to the second oscillator. The bias driver conditions, e.g., level shifts, the signal from the first oscillator for input into the second oscillator, and also controls the length of each RF burst. A trigger pulse actuates a timing circuit, formed of a flip-flop and associated reset time delay circuit, that controls the operation of the first oscillator, i.e., how long it oscillates (which defines the transmit cycle).

Anomalous annealing of floating gate errors due to heavy ion irradiation

NASA Astrophysics Data System (ADS)

Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong

2018-03-01

Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy-ion induced floating gate (FG) errors in 34 nm and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

NASA Astrophysics Data System (ADS)

Simoen, Eddy; Gaillardin, Marc; Paillet, Philippe; Reed, Robert A.; Schrimpf, Ron D.; Alles, Michael L.; El-Mamouni, Farah; Fleetwood, Daniel M.; Griffoni, Alessio; Claeys, Cor

2013-06-01

The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion microdose effects and single-event effects (SEEs) will be discussed. It is shown that a very high TID tolerance can be achieved by narrow-fin SOI FinFET architectures, while bulk FinFETs may exhibit similar TID response to the planar devices. Due to the vertical nature of FinFETs, a specific heavy-ion response can be obtained, whereby the angle of incidence becomes highly important with respect to the vertical sidewall gates. With respect to SEE, the buried oxide in the SOI FinFETs suppresses the diffusion tails from the charge collection in the substrate compared to the planar bulk FinFET devices. Channel lengths and fin widths are now comparable to, or smaller than the dimensions of the region affected by the single ionizing ions or lasers used in testing. This gives rise to a high degree of sensitivity to individual device parameters and source-drain shunting during ion-beam or laser-beam SEE testing. Simulations are used to illuminate the mechanisms observed in radiation testing and the progress and needs for the numerical modeling/simulation of the radiation response of advanced SOI and FinFET transistors are highlighted.

A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

2017-04-01

In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

Computer simulation of ion channel gating: the M(2) channel of influenza A virus in a lipid bilayer

NASA Technical Reports Server (NTRS)

Schweighofer, K. J.; Pohorille, A.

2000-01-01

The transmembrane fragment of the influenza virus M(2) protein forms a homotetrameric channel that transports protons. In this paper, we use molecular dynamics simulations to help elucidate the mechanism of channel gating by four histidines that occlude the channel lumen in the closed state. We test two competing hypotheses. In the "shuttle" mechanism, the delta nitrogen atom on the extracellular side of one histidine is protonated by the incoming proton, and, subsequently, the proton on the epsilon nitrogen atom is released on the opposite side. In the "water-wire" mechanism, the gate opens because of electrostatic repulsion between four simultaneously biprotonated histidines. This allows for proton transport along the water wire that penetrates the gate. For each system, composed of the channel embedded in a hydrated phospholipid bilayer, a 1.3-ns trajectory was obtained. It is found that the states involved in the shuttle mechanism, which contain either single-protonated histidines or a mixture of single-protonated histidines plus one biprotonated residue, are stable during the simulations. Furthermore, the orientations and dynamics of water molecules near the gate are conducive to proton transfer. In contrast, the fully biprotonated state is not stable. Additional simulations show that if only two histidines are biprotonated, the channel deforms but the gate remains closed. These results support the shuttle mechanism but not the gate-opening mechanism of proton gating in M(2).

Development of Gating Foils To Inhibit Ion Feedback Using FPC Production Techniques

NASA Astrophysics Data System (ADS)

Arai, D.; Ikematsu, K.; Sugiyama, A.; Iwamura, M.; Koto, A.; Katsuki, K.; Fujii, K.; Matsuda, T.

2018-02-01

Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions, MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μm pitch, 12.5 μm thick gating foil with 80 % transmittance of electrons in ILC conditions.

Ku-band high efficiency GaAs MMIC power amplifiers

NASA Technical Reports Server (NTRS)

Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul

1988-01-01

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

Quantum gates by periodic driving

PubMed Central

Shi, Z. C.; Wang, W.; Yi, X. X.

2016-01-01

Topological quantum computation has been extensively studied in the past decades due to its robustness against decoherence. One way to realize the topological quantum computation is by adiabatic evolutions—it requires relatively long time to complete a gate, so the speed of quantum computation slows down. In this work, we present a method to realize single qubit quantum gates by periodic driving. Compared to adiabatic evolution, the single qubit gates can be realized at a fixed time much shorter than that by adiabatic evolution. The driving fields can be sinusoidal or square-well field. With the sinusoidal driving field, we derive an expression for the total operation time in the high-frequency limit, and an exact analytical expression for the evolution operator without any approximations is given for the square well driving. This study suggests that the period driving could provide us with a new direction in regulations of the operation time in topological quantum computation. PMID:26911900

Quantum gates by periodic driving.

PubMed

Shi, Z C; Wang, W; Yi, X X

2016-02-25

Topological quantum computation has been extensively studied in the past decades due to its robustness against decoherence. One way to realize the topological quantum computation is by adiabatic evolutions-it requires relatively long time to complete a gate, so the speed of quantum computation slows down. In this work, we present a method to realize single qubit quantum gates by periodic driving. Compared to adiabatic evolution, the single qubit gates can be realized at a fixed time much shorter than that by adiabatic evolution. The driving fields can be sinusoidal or square-well field. With the sinusoidal driving field, we derive an expression for the total operation time in the high-frequency limit, and an exact analytical expression for the evolution operator without any approximations is given for the square well driving. This study suggests that the period driving could provide us with a new direction in regulations of the operation time in topological quantum computation.

Exact CNOT gates with a single nonlocal rotation for quantum-dot qubits

NASA Astrophysics Data System (ADS)

Pal, Arijeet; Rashba, Emmanuel I.; Halperin, Bertrand I.

2015-09-01

We investigate capacitively-coupled exchange-only two-qubit quantum gates based on quantum dots. For exchange-only coded qubits electron spin S and its projection Sz are exact quantum numbers. Capacitive coupling between qubits, as distinct from interqubit exchange, preserves these quantum numbers. We prove, both analytically and numerically, that conservation of the spins of individual qubits has a dramatic effect on the performance of two-qubit gates. By varying the level splittings of individual qubits, Ja and Jb, and the interqubit coupling time, t , we can find an infinite number of triples (Ja,Jb,t ) for which the two-qubit entanglement, in combination with appropriate single-qubit rotations, can produce an exact cnot gate. This statement is true for practically arbitrary magnitude and form of capacitive interqubit coupling. Our findings promise a large decrease in the number of nonlocal (two-qubit) operations in quantum circuits.

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

DOEpatents

Welch, James D.

2000-01-01

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Conformational rearrangements in the transmembrane domain of CNGA1 channels revealed by single-molecule force spectroscopy

NASA Astrophysics Data System (ADS)

Maity, Sourav; Mazzolini, Monica; Arcangeletti, Manuel; Valbuena, Alejandro; Fabris, Paolo; Lazzarino, Marco; Torre, Vincent

2015-05-01

Cyclic nucleotide-gated (CNG) channels are activated by binding of cyclic nucleotides. Although structural studies have identified the channel pore and selectivity filter, conformation changes associated with gating remain poorly understood. Here we combine single-molecule force spectroscopy (SMFS) with mutagenesis, bioinformatics and electrophysiology to study conformational changes associated with gating. By expressing functional channels with SMFS fingerprints in Xenopus laevis oocytes, we were able to investigate gating of CNGA1 in a physiological-like membrane. Force spectra determined that the S4 transmembrane domain is mechanically coupled to S5 in the closed state, but S3 in the open state. We also show there are multiple pathways for the unfolding of the transmembrane domains, probably caused by a different degree of α-helix folding. This approach demonstrates that CNG transmembrane domains have dynamic structure and establishes SMFS as a tool for probing conformational change in ion channels.

Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors suchmore » as enhanced on-current are also observed.« less

STIR: Novel Electronic States by Gating Strongly Correlated Materials

DTIC Science & Technology

2016-03-01

plan built on my group’s recent demonstration of electrolyte gating in Strontium Titanate, using an atomically thin hexagonal Boron Nitride barrier to...demonstration of electrolyte gating in Strontium Titanate, using an atomically thin hexagonal Boron Nitride barrier to prevent disorder and chemical...techniques and learned to apply thin hexagonal Boron Nitride to single crystals of materials expected to show some of the most exciting correlated

Wavelength-dependence of double optical gating for attosecond pulse generation

NASA Astrophysics Data System (ADS)

Tian, Jia; Li, Min; Yu, Ji-Zhou; Deng, Yong-Kai; Liu, Yun-Quan

2014-10-01

Both polarization gating (PG) and double optical gating (DOG) are productive methods to generate single attosecond (as) pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.

Universal holonomic single quantum gates over a geometric spin with phase-modulated polarized light.

PubMed

Ishida, Naoki; Nakamura, Takaaki; Tanaka, Touta; Mishima, Shota; Kano, Hiroki; Kuroiwa, Ryota; Sekiguchi, Yuhei; Kosaka, Hideo

2018-05-15

We demonstrate universal non-adiabatic non-abelian holonomic single quantum gates over a geometric electron spin with phase-modulated polarized light and 93% average fidelity. This allows purely geometric rotation around an arbitrary axis by any angle defined by light polarization and phase using a degenerate three-level Λ-type system in a negatively charged nitrogen-vacancy center in diamond. Since the control light is completely resonant to the ancillary excited state, the demonstrated holonomic gate not only is fast with low power, but also is precise without the dynamical phase being subject to control error and environmental noise. It thus allows pulse shaping for further fidelity.

A reconfigurable gate architecture for Si/SiGe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zajac, D. M.; Hazard, T. M.; Mi, X.

2015-06-01

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

Two-qubit logical operations in three quantum dots system.

PubMed

Łuczak, Jakub; Bułka, Bogdan R

2018-06-06

We consider a model of two interacting always-on, exchange-only qubits for which controlled phase (CPHASE), controlled NOT (CNOT), quantum Fourier transform (QFT) and SWAP operations can be implemented only in a few electrical pulses in a nanosecond time scale. Each qubit is built of three quantum dots (TQD) in a triangular geometry with three electron spins which are always kept coupled by exchange interactions only. The qubit states are encoded in a doublet subspace and are fully electrically controlled by a voltage applied to gate electrodes. The two qubit quantum gates are realized by short electrical pulses which change the triangular symmetry of TQD and switch on exchange interaction between the qubits. We found an optimal configuration to implement the CPHASE gate by a single pulse of the order 2.3 ns. Using this gate, in combination with single qubit operations, we searched for optimal conditions to perform the other gates: CNOT, QFT and SWAP. Our studies take into account environment effects and leakage processes as well. The results suggest that the system can be implemented for fault tolerant quantum computations.

Adiabatically-controlled two-qubit gates using quantum dot hybrid qubits

NASA Astrophysics Data System (ADS)

Frees, Adam; Gamble, John King; Friesen, Mark; Coppersmith, S. N.

With its recent success in experimentally performing single-qubit gates, the quantum dot hybrid qubit is an excellent candidate for two-qubit gating. Here, we propose an operational scheme which exploits the electrostatic properties of such qubits to yield a tunable effective coupling in a system with a static capacitive coupling between the dots. We then use numerically calculated fidelities to demonstrate the effect of charge noise on single- and two-qubit gates with this scheme. Finally, we show steps towards optimizing the gates fidelities, and discuss ways that the scheme could be further improved. This work was supported in part by ARO (W911NF-12-0607) (W911NF-12-R-0012), NSF (PHY-1104660), ONR (N00014-15-1-0029). The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

A single residue controls electron transfer gating in photosynthetic reaction centers

NASA Astrophysics Data System (ADS)

Shlyk, Oksana; Samish, Ilan; Matěnová, Martina; Dulebo, Alexander; Poláková, Helena; Kaftan, David; Scherz, Avigdor

2017-03-01

Interquinone QA- → QB electron-transfer (ET) in isolated photosystem II reaction centers (PSII-RC) is protein-gated. The temperature-dependent gating frequency “k” is described by the Eyring equation till levelling off at T ≥ 240 °K. Although central to photosynthesis, the gating mechanism has not been resolved and due to experimental limitations, could not be explored in vivo. Here we mimic the temperature dependency of “k” by enlarging VD1-208, the volume of a single residue at the crossing point of the D1 and D2 PSII-RC subunits in Synechocystis 6803 whole cells. By controlling the interactions of the D1/D2 subunits, VD1-208 (or 1/T) determines the frequency of attaining an ET-active conformation. Decelerated ET, impaired photosynthesis, D1 repair rate and overall cell physiology upon increasing VD1-208 to above 130 Å3, rationalize the >99% conservation of small residues at D1-208 and its homologous motif in non-oxygenic bacteria. The experimental means and resolved mechanism are relevant for numerous transmembrane protein-gated reactions.

NOTE: Pre-clinical evaluation of respiratory-gated delivery of volumetric modulated arc therapy with RapidArc

NASA Astrophysics Data System (ADS)

Nicolini, Giorgia; Vanetti, Eugenio; Clivio, Alessandro; Fogliata, Antonella; Cozzi, Luca

2010-06-01

A study was carried out to evaluate the possibility of delivering volumetric modulated arc therapy with the RapidArc technology under respiratory-gated conditions. The experiments were performed in the framework of a non-clinically released environment. Plans of six patients, all realized for a single arc, were used for the experiments. The Real-time Position Management™ (RPM) respiratory gating system from Varian was used to generate gate-open signals of different durations. Arcs were delivered applying the different gates creating sequences of beam-hold/beam-on during the dose delivery: the average number of interruptions for a single arc ranged from 0 to 45. Dose prescription was set to 2 Gy and different gate-open periods of 30, 15 and 5 s to keep gantry speed constant at maximum. 5 Gy and 15 Gy doses were then applied to gate-open signals of 5 and 8 s, respectively, to mimic the most challenging conditions of slow gantry rotation and high-frequency interruptions. The 5 and 15 Gy experiments represent dose conditions of clinical interest for stereotactic treatments. For each patient and gating condition, pre-treatment 2D verification measurements were performed using the PTW-729 array in conjunction with the Octavius phantom (PTW, Freiburg); measurements were performed on different days (one per patient, with the complete setup of phantom and detectors every time), while each gating experiment was repeated seven consecutive times for reproducibility (without a new setup of the measurement equipment). Measurements were compared with dose calculations in the treatment planning system (performed without any gating) to appraise the dosimetric impact of the presence of gating and the eventual dependence from the number of interruptions during a single arc. Analysis of machine-registered log files in terms of average deviations between actual and expected positions (from automatic measurements every 50 ms) resulted in mean ΔMU (monitor units) <0.02% for all gating conditions. Δ(Gantry angle) = 0.38 ± 0.01° for 2 Gy (all gate periods), 0.24 ± 0.01° for 5 Gy, and 0.10 ± 0.01° for 15 Gy deliveries. Average deviations for multileaf collimator (MLC) positions (root mean square over all 120 leaves) were 0.45 ± 0.01 mm for 2 Gy (all gate periods), 0.32 ± 0.01 mm for 5 Gy and 0.14 ± 0.01 mm for 15 Gy. Results in terms of dose measurements confirmed that the application of gating to RapidArc delivery does not affect the quality of the dose delivery. With criteria of ΔD = 3%, DTA = 3 mm, the gamma test was passing in a range of 99 to 100% of the measured points for most of the cases (with maximum number of interruptions of about 20 per arc) and from 97 to 98% for the extreme case of 15 Gy and 8 s gate-open signal (corresponding to almost 50 interruptions per arc). In conclusion, RapidArc delivery proved, in a pre-clinical phase and non-clinically released framework, to be reliable and dosimetrically accurate also when applied in conjunction with gating procedures.

An efficient quantum circuit analyser on qubits and qudits

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2011-10-01

This paper presents a highly efficient decomposition scheme and its associated Mathematica notebook for the analysis of complicated quantum circuits comprised of single/multiple qubit and qudit quantum gates. In particular, this scheme reduces the evaluation of multiple unitary gate operations with many conditionals to just two matrix additions, regardless of the number of conditionals or gate dimensions. This improves significantly the capability of a quantum circuit analyser implemented in a classical computer. This is also the first efficient quantum circuit analyser to include qudit quantum logic gates.

Photon-triggered nanowire transistors

NASA Astrophysics Data System (ADS)

Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J.; Park, Hong-Gyu

2017-10-01

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control

NASA Astrophysics Data System (ADS)

Tosi, Alberto; Ruggeri, Alessandro; Bahgat Shehata, Andrea; Della Frera, Adriano; Scarcella, Carmelo; Tisa, Simone; Giudice, Andrea

2013-01-01

We present a photon-counting module based on InGaAs/InP SPAD (Single-Photon Avalanche Diode) for detecting single photons up to 1.7 μm. The module exploits a novel architecture for generating and calibrating the gate width, along with other functions (such as module supervision, counting and processing of detected photons, etc.). The gate width, i.e. the time interval when the SPAD is ON, is user-programmable in the range from 500 ps to 1.5 μs, by means of two different delay generation methods implemented with an FPGA (Field-Programmable Gate Array). In order to compensate chip-to-chip delay variation, an auto-calibration circuit picks out a combination of delays in order to match at best the selected gate width. The InGaAs/InP module accepts asynchronous and aperiodic signals and introduces very low timing jitter. Moreover the photon counting module provides other new features like a microprocessor for system supervision, a touch-screen for local user interface, and an Ethernet link for smart remote control. Thanks to the fullyprogrammable and configurable architecture, the overall instrument provides high system flexibility and can easily match all requirements set by many different applications requiring single photon-level sensitivity in the near infrared with very low photon timing jitter.

Photon-triggered nanowire transistors.

PubMed

Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J; Park, Hong-Gyu

2017-10-01

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6 . A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Efficient G(sup 4)FET-Based Logic Circuits

NASA Technical Reports Server (NTRS)

Vatan, Farrokh

2008-01-01

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

Spectroscopic neutron detection using composite scintillators

NASA Astrophysics Data System (ADS)

Jovanovic, I.; Foster, A.; Kukharev, V.; Mayer, M.; Meddeb, A.; Nattress, J.; Ounaies, Z.; Trivelpiece, C.

2016-09-01

Shielded special nuclear material (SNM), especially highly enriched uranium, is exceptionally difficult to detect without the use of active interrogation (AI). We are investigating the potential use of low-dose active interrogation to realize simultaneous high-contrast imaging and photofission of SNM using energetic gamma-rays produced by low-energy nuclear reactions, such as 11B(d,nγ)12C and 12C(p,p‧)12C. Neutrons produced via fission are one reliable signature of the presence of SNM and are usually identified by their unique timing characteristics, such as the delayed neutron die-away. Fast neutron spectroscopy may provide additional useful discriminating characteristics for SNM detection. Spectroscopic measurements can be conducted by recoil-based or thermalization and capture-gated detectors; the latter may offer unique advantages since they facilitate low-statistics and event-by-event neutron energy measurements without spectrum unfolding. We describe the results of the development and characterization of a new type of capture-gated spectroscopic neutron detector based on a composite of scintillating polyvinyltoluene and lithium-doped scintillating glass in the form of millimeter-thick rods. The detector achieves >108 neutron-gamma discrimination resulting from its geometric properties and material selection. The design facilitates simultaneous pulse shape and pulse height discrimination, despite the fact that no materials intrinsically capable of pulse shape discrimination have been used to construct the detector. Accurate single-event measurements of neutron energy may be possible even when the energy is relatively low, such as with delayed fission neutrons. Simulation and preliminary measurements using the new composite detector are described, including those conducted using radioisotope sources and the low-dose active interrogation system based on low-energy nuclear reactions.

Good Vibrations: Cross-Frequency Coupling in the Human Nucleus Accumbens during Reward Processing

ERIC Educational Resources Information Center

Cohen, Michael X.; Axmacher, Nikolai; Lenartz, Doris; Elger, Christian E.; Sturm, Volker; Schlaepfer, Thomas E.

2009-01-01

The nucleus accumbens is critical for reward-guided learning and decision-making. It is thought to "gate" the flow of a diverse range of information (e.g., rewarding, aversive, and novel events) from limbic afferents to basal ganglia outputs. Gating and information encoding may be achieved via cross-frequency coupling, in which bursts of…

Multiple Embedded Processors for Fault-Tolerant Computing

NASA Technical Reports Server (NTRS)

Bolotin, Gary; Watson, Robert; Katanyoutanant, Sunant; Burke, Gary; Wang, Mandy

2005-01-01

A fault-tolerant computer architecture has been conceived in an effort to reduce vulnerability to single-event upsets (spurious bit flips caused by impingement of energetic ionizing particles or photons). As in some prior fault-tolerant architectures, the redundancy needed for fault tolerance is obtained by use of multiple processors in one computer. Unlike prior architectures, the multiple processors are embedded in a single field-programmable gate array (FPGA). What makes this new approach practical is the recent commercial availability of FPGAs that are capable of having multiple embedded processors. A working prototype (see figure) consists of two embedded IBM PowerPC 405 processor cores and a comparator built on a Xilinx Virtex-II Pro FPGA. This relatively simple instantiation of the architecture implements an error-detection scheme. A planned future version, incorporating four processors and two comparators, would correct some errors in addition to detecting them.

Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

NASA Astrophysics Data System (ADS)

Lu, Zhongyuan; Serrao, Claudy; Khan, Asif Islam; You, Long; Wong, Justin C.; Ye, Yu; Zhu, Hanyu; Zhang, Xiang; Salahuddin, Sayeef

2017-07-01

We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ˜ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides.

Determination of single-kidney glomerular filtration rate (GFR) with CT urography versus renal dynamic imaging Gates method.

PubMed

You, Shan; Ma, XianWu; Zhang, ChangZhu; Li, Qiang; Shi, WenWei; Zhang, Jing; Yuan, XiaoDong

2018-03-01

To present a single-kidney CT-GFR measurement and compare it with the renal dynamic imaging Gates-GFR. Thirty-six patients with hydronephrosis referred for CT urography and 99mTc-DTPA renal dynamic imaging were prospectively included. Informed consent was obtained from all patients. The CT urography protocol included non-contrast, nephrographic, and excretory phase imaging. The total CT-GFR was calculated by dividing the CT number increments of the total urinary system between the nephrographic and excretory phase by the products of iodine concentration in the aorta and the elapsed time, then multiplied by (1- Haematocrit). The total CT-GFR was then split into single-kidney CT-GFR by a left and right kidney proportionality factor. The results were compared with single-kidney Gates-GFR by using paired t-test, correlation analysis, and Bland-Altman plots. Paired difference between single-kidney CT-GFR (45.02 ± 13.91) and single-kidney Gates-GFR (51.21 ± 14.76) was 6.19 ± 5.63 ml/min, p<0.001, demonstrating 12.1% systematic underestimation with ±11.03 ml/min (±21.5%) measurement deviation. A good correlation was revealed between both measurements (r=0.87, p<0.001). The proposed single-kidney CT-GFR correlates and agrees well with the reference standard despite a systematic underestimation, therefore it could be a one-stop-shop for evaluating urinary tract morphology and split renal function. • A new CT method can assess split renal function • Only using images from CT urography and the value of haematocrit • A one-stop-shop CT technique without additional radiation dose.

Genetic programs constructed from layered logic gates in single cells

PubMed Central

Moon, Tae Seok; Lou, Chunbo; Tamsir, Alvin; Stanton, Brynne C.; Voigt, Christopher A.

2014-01-01

Genetic programs function to integrate environmental sensors, implement signal processing algorithms and control expression dynamics1. These programs consist of integrated genetic circuits that individually implement operations ranging from digital logic to dynamic circuits2–6, and they have been used in various cellular engineering applications, including the implementation of process control in metabolic networks and the coordination of spatial differentiation in artificial tissues. A key limitation is that the circuits are based on biochemical interactions occurring in the confined volume of the cell, so the size of programs has been limited to a few circuits1,7. Here we apply part mining and directed evolution to build a set of transcriptional AND gates in Escherichia coli. Each AND gate integrates two promoter inputs and controls one promoter output. This allows the gates to be layered by having the output promoter of an upstream circuit serve as the input promoter for a downstream circuit. Each gate consists of a transcription factor that requires a second chaperone protein to activate the output promoter. Multiple activator–chaperone pairs are identified from type III secretion pathways in different strains of bacteria. Directed evolution is applied to increase the dynamic range and orthogonality of the circuits. These gates are connected in different permutations to form programs, the largest of which is a 4-input AND gate that consists of 3 circuits that integrate 4 inducible systems, thus requiring 11 regulatory proteins. Measuring the performance of individual gates is sufficient to capture the behaviour of the complete program. Errors in the output due to delays (faults), a common problem for layered circuits, are not observed. This work demonstrates the successful layering of orthogonal logic gates, a design strategy that could enable the construction of large, integrated circuits in single cells. PMID:23041931

A photon-photon quantum gate based on a single atom in an optical resonator.

PubMed

Hacker, Bastian; Welte, Stephan; Rempe, Gerhard; Ritter, Stephan

2016-08-11

That two photons pass each other undisturbed in free space is ideal for the faithful transmission of information, but prohibits an interaction between the photons. Such an interaction is, however, required for a plethora of applications in optical quantum information processing. The long-standing challenge here is to realize a deterministic photon-photon gate, that is, a mutually controlled logic operation on the quantum states of the photons. This requires an interaction so strong that each of the two photons can shift the other's phase by π radians. For polarization qubits, this amounts to the conditional flipping of one photon's polarization to an orthogonal state. So far, only probabilistic gates based on linear optics and photon detectors have been realized, because "no known or foreseen material has an optical nonlinearity strong enough to implement this conditional phase shift''. Meanwhile, tremendous progress in the development of quantum-nonlinear systems has opened up new possibilities for single-photon experiments. Platforms range from Rydberg blockade in atomic ensembles to single-atom cavity quantum electrodynamics. Applications such as single-photon switches and transistors, two-photon gateways, nondestructive photon detectors, photon routers and nonlinear phase shifters have been demonstrated, but none of them with the ideal information carriers: optical qubits in discriminable modes. Here we use the strong light-matter coupling provided by a single atom in a high-finesse optical resonator to realize the Duan-Kimble protocol of a universal controlled phase flip (π phase shift) photon-photon quantum gate. We achieve an average gate fidelity of (76.2 ± 3.6) per cent and specifically demonstrate the capability of conditional polarization flipping as well as entanglement generation between independent input photons. This photon-photon quantum gate is a universal quantum logic element, and therefore could perform most existing two-photon operations. The demonstrated feasibility of deterministic protocols for the optical processing of quantum information could lead to new applications in which photons are essential, especially long-distance quantum communication and scalable quantum computing.

Evaluation of the clinical efficacy of the PeTrack motion tracking system for respiratory gating in cardiac PET imaging

NASA Astrophysics Data System (ADS)

Manwell, Spencer; Chamberland, Marc J. P.; Klein, Ran; Xu, Tong; deKemp, Robert

2017-03-01

Respiratory gating is a common technique used to compensate for patient breathing motion and decrease the prevalence of image artifacts that can impact diagnoses. In this study a new data-driven respiratory gating method (PeTrack) was compared with a conventional optical tracking system. The performance of respiratory gating of the two systems was evaluated by comparing the number of respiratory triggers, patient breathing intervals and gross heart motion as measured in the respiratory-gated image reconstructions of rubidium-82 cardiac PET scans in test and control groups consisting of 15 and 8 scans, respectively. We found evidence suggesting that PeTrack is a robust patient motion tracking system that can be used to retrospectively assess patient motion in the event of failure of the conventional optical tracking system.

Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castello, Marco; DIBRIS, University of Genoa, Via Opera Pia 13, Genoa 16145; Diaspro, Alberto

2014-12-08

Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated andmore » experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.« less

Characterization of radiation effects in 65 nm digital circuits with the DRAD digital radiation test chip

NASA Astrophysics Data System (ADS)

Jara Casas, L. M.; Ceresa, D.; Kulis, S.; Miryala, S.; Christiansen, J.; Francisco, R.; Gnani, D.

2017-02-01

A Digital RADiation (DRAD) test chip has been specifically designed to study the impact of Total Ionizing Dose (TID) (<1 Grad) and Single Event Upset (SEU) on digital logic gates in a 65 nm CMOS technology. Nine different versions of standard cell libraries are studied in this chip, basically differing in the device dimensions, Vt flavor and layout of the device. Each library has eighteen test structures specifically designed to characterize delay degradation and power consumption of the standard cells. For SEU study, a dedicated test structure based on a shift register is designed for each library. TID results up to 500 Mrad are reported.

Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

NASA Technical Reports Server (NTRS)

Adell, Philippe; Allen, Gregory

2013-01-01

As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

LRET Determination of Molecular Distances during pH Gating of the Mammalian Inward Rectifier Kir1.1b.

PubMed

Nanazashvili, Mikheil; Sánchez-Rodríguez, Jorge E; Fosque, Ben; Bezanilla, Francisco; Sackin, Henry

2018-01-09

Gating of the mammalian inward rectifier Kir1.1 at the helix bundle crossing (HBC) by intracellular pH is believed to be mediated by conformational changes in the C-terminal domain (CTD). However, the exact motion of the CTD during Kir gating remains controversial. Crystal structures and single-molecule fluorescence resonance energy transfer of KirBac channels have implied a rigid body rotation and/or a contraction of the CTD as possible triggers for opening of the HBC gate. In our study, we used lanthanide-based resonance energy transfer on single-Cys dimeric constructs of the mammalian renal inward rectifier, Kir1.1b, incorporated into anionic liposomes plus PIP 2 , to determine unambiguous, state-dependent distances between paired Cys residues on diagonally opposite subunits. Functionality and pH dependence of our proteoliposome channels were verified in separate electrophysiological experiments. The lanthanide-based resonance energy transfer distances measured in closed (pH 6) and open (pH 8) conditions indicated neither expansion nor contraction of the CTD during gating, whereas the HBC gate widened by 8.8 ± 4 Å, from 6.3 ± 2 to 15.1 ± 6 Å, during opening. These results are consistent with a Kir gating model in which rigid body rotation of the large CTD around the permeation axis is correlated with opening of the HBC hydrophobic gate, allowing permeation of a 7 Å hydrated K ion. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Using Pipelined XNOR Logic to Reduce SEU Risks in State Machines

NASA Technical Reports Server (NTRS)

Le, Martin; Zheng, Xin; Katanyoutant, Sunant

2008-01-01

Single-event upsets (SEUs) pose great threats to avionic systems state machine control logic, which are frequently used to control sequence of events and to qualify protocols. The risks of SEUs manifest in two ways: (a) the state machine s state information is changed, causing the state machine to unexpectedly transition to another state; (b) due to the asynchronous nature of SEU, the state machine's state registers become metastable, consequently causing any combinational logic associated with the metastable registers to malfunction temporarily. Effect (a) can be mitigated with methods such as triplemodular redundancy (TMR). However, effect (b) cannot be eliminated and can degrade the effectiveness of any mitigation method of effect (a). Although there is no way to completely eliminate the risk of SEU-induced errors, the risk can be made very small by use of a combination of very fast state-machine logic and error-detection logic. Therefore, one goal of two main elements of the present method is to design the fastest state-machine logic circuitry by basing it on the fastest generic state-machine design, which is that of a one-hot state machine. The other of the two main design elements is to design fast error-detection logic circuitry and to optimize it for implementation in a field-programmable gate array (FPGA) architecture: In the resulting design, the one-hot state machine is fitted with a multiple-input XNOR gate for detection of illegal states. The XNOR gate is implemented with lookup tables and with pipelines for high speed. In this method, the task of designing all the logic must be performed manually because no currently available logic synthesis software tool can produce optimal solutions of design problems of this type. However, some assistance is provided by a script, written for this purpose in the Python language (an object-oriented interpretive computer language) to automatically generate hardware description language (HDL) code from state-transition rules.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

PubMed Central

Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

2016-01-01

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

A highly manufacturable 0.2 {mu}m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Havasy, C.K.; Quach, T.K.; Bozada, C.A.

1995-12-31

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 {mu}m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

PubMed

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-15

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

Bayesian Statistical Inference in Ion-Channel Models with Exact Missed Event Correction.

PubMed

Epstein, Michael; Calderhead, Ben; Girolami, Mark A; Sivilotti, Lucia G

2016-07-26

The stochastic behavior of single ion channels is most often described as an aggregated continuous-time Markov process with discrete states. For ligand-gated channels each state can represent a different conformation of the channel protein or a different number of bound ligands. Single-channel recordings show only whether the channel is open or shut: states of equal conductance are aggregated, so transitions between them have to be inferred indirectly. The requirement to filter noise from the raw signal further complicates the modeling process, as it limits the time resolution of the data. The consequence of the reduced bandwidth is that openings or shuttings that are shorter than the resolution cannot be observed; these are known as missed events. Postulated models fitted using filtered data must therefore explicitly account for missed events to avoid bias in the estimation of rate parameters and therefore assess parameter identifiability accurately. In this article, we present the first, to our knowledge, Bayesian modeling of ion-channels with exact missed events correction. Bayesian analysis represents uncertain knowledge of the true value of model parameters by considering these parameters as random variables. This allows us to gain a full appreciation of parameter identifiability and uncertainty when estimating values for model parameters. However, Bayesian inference is particularly challenging in this context as the correction for missed events increases the computational complexity of the model likelihood. Nonetheless, we successfully implemented a two-step Markov chain Monte Carlo method that we called "BICME", which performs Bayesian inference in models of realistic complexity. The method is demonstrated on synthetic and real single-channel data from muscle nicotinic acetylcholine channels. We show that parameter uncertainty can be characterized more accurately than with maximum-likelihood methods. Our code for performing inference in these ion channel models is publicly available. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

[The anesthetic effects of Gow-Gates technique of inferior alveolar nerve block in impacted mandibular third molar extraction].

PubMed

Yang, Jieping; Liu, Wei; Gao, Qinghong

2013-08-01

To evaluate the anesthetic effects and safety of Gow-Gates technique of inferior alveolar nerve block in impacted mandibular third molar extraction. A split-mouth study was designed. The bilateral impacted mandibular third molar of 32 participants were divided into Gow-Gates technique of inferior alveolar nerve block (Gow-Gates group) and conventional technique of inferior alveolar nerve block (conventional group) randomly with third molar extracted. The anesthetic effects and adverse events were recorded. All the participants completed the research. The anesthetic success rate was 96.9% in Gow-Gates group and 90.6% in conventional group with no statistical difference ( P= 0.317); but when comparing the anesthesia grade, Gow-Gates group had a 96.9% of grade A and B, and conventional group had a rate of 78.1% (P = 0.034). And the Gow-Gates group had a much lower withdrawn bleeding than conventional group (P = 0.025). Two groups had no hematoma. Gow-Gates technique had a reliable anesthesia effects and safety in impacted mandibular third molar extraction and could be chosen as a candidate for the conventional inferior alveolar nerve block.

High-contrast terahertz wave modulation by gated graphene enhanced by extraordinary transmission through ring apertures.

PubMed

Gao, Weilu; Shu, Jie; Reichel, Kimberly; Nickel, Daniel V; He, Xiaowei; Shi, Gang; Vajtai, Robert; Ajayan, Pulickel M; Kono, Junichiro; Mittleman, Daniel M; Xu, Qianfan

2014-03-12

Gate-controllable transmission of terahertz (THz) radiation makes graphene a promising material for making high-speed THz wave modulators. However, to date, graphene-based THz modulators have exhibited only small on/off ratios due to small THz absorption in single-layer graphene. Here we demonstrate a ∼50% amplitude modulation of THz waves with gated single-layer graphene by the use of extraordinary transmission through metallic ring apertures placed right above the graphene layer. The extraordinary transmission induced ∼7 times near-filed enhancement of THz absorption in graphene. These results promise complementary metal-oxide-semiconductor compatible THz modulators with tailored operation frequencies, large on/off ratios, and high speeds, ideal for applications in THz communications, imaging, and sensing.

Systems and methods for detecting a failure event in a field programmable gate array

NASA Technical Reports Server (NTRS)

Ng, Tak-Kwong (Inventor); Herath, Jeffrey A. (Inventor)

2009-01-01

An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.

Catheter-based time-gated near-infrared fluorescence/OCT imaging system

NASA Astrophysics Data System (ADS)

Lu, Yuankang; Abran, Maxime; Cloutier, Guy; Lesage, Frédéric

2018-02-01

We developed a new dual-modality intravascular imaging system based on fast time-gated fluorescence intensity imaging and spectral domain optical coherence tomography (SD-OCT) for the purpose of interventional detection of atherosclerosis. A pulsed supercontinuum laser was used for fluorescence and OCT imaging. A double-clad fiber (DCF)- based side-firing catheter was designed and fabricated to have a 23 μm spot size at a 2.2 mm working distance for OCT imaging. Its single-mode core is used for OCT, while its inner cladding transports fluorescence excitation light and collects fluorescent photons. The combination of OCT and fluorescence imaging was achieved by using a DCF coupler. For fluorescence detection, we used a time-gated technique with a novel single-photon avalanche diode (SPAD) working in an ultra-fast gating mode. A custom-made delay chip was integrated in the system to adjust the delay between the excitation laser pulse and the SPAD gate-ON window. This technique allowed to detect fluorescent photons of interest while rejecting most of the background photons, thus leading to a significantly improved signal to noise ratio (SNR). Experiments were carried out in turbid media mimicking tissue with an indocyanine green (ICG) inclusion (1 mM and 100 μM) to compare the time-gated technique and the conventional continuous detection technique. The gating technique increased twofold depth sensitivity, and tenfold SNR at large distances. The dual-modality imaging capacity of our system was also validated with a silicone-based tissue-mimicking phantom.

All optical logic for optical pattern recognition and networking applications

NASA Astrophysics Data System (ADS)

Khoury, Jed

2017-05-01

In this paper, we propose architectures for the implementation 16 Boolean optical gates from two inputs using externally pumped phase- conjugate Michelson interferometer. Depending on the gate to be implemented, some require single stage interferometer and others require two stages interferometer. The proposed optical gates can be used in several applications in optical networks including, but not limited to, all-optical packet routers switching, and all-optical error detection. The optical logic gates can also be used in recognition of noiseless rotation and scale invariant objects such as finger prints for home land security applications.

A two-qubit photonic quantum processor and its application to solving systems of linear equations

PubMed Central

Barz, Stefanie; Kassal, Ivan; Ringbauer, Martin; Lipp, Yannick Ole; Dakić, Borivoje; Aspuru-Guzik, Alán; Walther, Philip

2014-01-01

Large-scale quantum computers will require the ability to apply long sequences of entangling gates to many qubits. In a photonic architecture, where single-qubit gates can be performed easily and precisely, the application of consecutive two-qubit entangling gates has been a significant obstacle. Here, we demonstrate a two-qubit photonic quantum processor that implements two consecutive CNOT gates on the same pair of polarisation-encoded qubits. To demonstrate the flexibility of our system, we implement various instances of the quantum algorithm for solving of systems of linear equations. PMID:25135432

Characteristics of camel-gate structures with active doping channel profiles

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Lour, Wen-Shiung; Laih, Lih-Wen; Liu, Rong-Chau; Liu, Wen-Chau

1996-03-01

In this paper, we demonstrate the influence of channel doping profile on the performances of camel-gate field effect transistors (CAMFETs). For comparison, single and tri-step doping channel structures with identical doping thickness products are employed, while other parameters are kept unchanged. The results of a theoretical analysis show that the single doping channel FET with lightly doping active layer has higher barrier height and drain-source saturation current. However, the transconductance is decreased. For a tri-step doping channel structure, it is found that the output drain-source saturation current and the barrier height are enhanced. Furthermore, the relatively voltage independent performances are improved. Two CAMFETs with single and tri-step doping channel structures have been fabricated and discussed. The devices exhibit nearly voltage independent transconductances of 144 mS mm -1 and 222 mS mm -1 for single and tri-step doping channel CAMFETs, respectively. The operation gate voltage may extend to ± 1.5 V for a tri-step doping channel CAMFET. In addition, the drain current densities of > 750 and 405 mA mm -1 are obtained for the tri-step and single doping CAMFETs. These experimental results are inconsistent with theoretical analysis.

Assessing hydraulic conditions through Francis turbines using an autonomous sensor device

DOE PAGES

Fu, Tao; Deng, Zhiqun Daniel; Duncan, Joanne P.; ...

2016-08-19

Downstream migratory fish, including some endangered species, can be injured or killed during turbine passage. In this study an autonomous Sensor Fish device was deployed at Arrowrock Dam, Cougar Dam, and Detroit Dam to evaluate the hydraulic conditions and physical stresses that fish experienced when passing through these Francis turbines. Pressure data was used to identify the location of the Sensor Fish and to calculate the nadir pressure and the magnitude and the rate of change in pressure during turbine passage. Acceleration data was used to identify events (collisions or shear) Sensor Fish experienced and to categorize the severity levelmore » (severe, medium, and slight) of each event. The results showed that Sensor Fish experienced severe events mostly in the stay vane/wicket gate region and the runner region. In the stay vane/wicket gate region, almost all severe events were collisions. In the runner region, Sensor fish experienced both severe collisions and severe shear events. Sensor Fish data at three wicket gate opening treatments at Cougar Dam indicated that the wicket gate opening of the Francis turbine can affect the hydraulic conditions in the turbine runner region. Fewer Sensor Fish experienced severe collisions in the turbine runner region at the peak efficiency than at the minimum opening and the maximum opening treatments. Comparisons between the Francis turbines at the three dams and the AHT Kaplan turbine at Wanapum Dam showed that higher percentage of Sensor Fish experienced severe events in the runner region when passing through Francis turbines than the AHT Kaplan turbine. The nadir pressures of the Francis turbines were lower than those of the AHT Kaplan turbine at Wanapum Dam. Both the magnitude and the rate of change in pressure were higher in Francis turbines than in the AHT Kaplan turbine at Wanapum Dam in the runner region. This study can be used to guide future laboratory studies of fish passing through Francis turbine and help the design of more fish-friendly turbines for new hydroelectric dams or the rehabilitations of existing dams.« less

Assessing hydraulic conditions through Francis turbines using an autonomous sensor device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Tao; Deng, Zhiqun Daniel; Duncan, Joanne P.

Downstream migratory fish, including some endangered species, can be injured or killed during turbine passage. In this study an autonomous Sensor Fish device was deployed at Arrowrock Dam, Cougar Dam, and Detroit Dam to evaluate the hydraulic conditions and physical stresses that fish experienced when passing through these Francis turbines. Pressure data was used to identify the location of the Sensor Fish and to calculate the nadir pressure and the magnitude and the rate of change in pressure during turbine passage. Acceleration data was used to identify events (collisions or shear) Sensor Fish experienced and to categorize the severity levelmore » (severe, medium, and slight) of each event. The results showed that Sensor Fish experienced severe events mostly in the stay vane/wicket gate region and the runner region. In the stay vane/wicket gate region, almost all severe events were collisions. In the runner region, Sensor fish experienced both severe collisions and severe shear events. Sensor Fish data at three wicket gate opening treatments at Cougar Dam indicated that the wicket gate opening of the Francis turbine can affect the hydraulic conditions in the turbine runner region. Fewer Sensor Fish experienced severe collisions in the turbine runner region at the peak efficiency than at the minimum opening and the maximum opening treatments. Comparisons between the Francis turbines at the three dams and the AHT Kaplan turbine at Wanapum Dam showed that higher percentage of Sensor Fish experienced severe events in the runner region when passing through Francis turbines than the AHT Kaplan turbine. The nadir pressures of the Francis turbines were lower than those of the AHT Kaplan turbine at Wanapum Dam. Both the magnitude and the rate of change in pressure were higher in Francis turbines than in the AHT Kaplan turbine at Wanapum Dam in the runner region. This study can be used to guide future laboratory studies of fish passing through Francis turbine and help the design of more fish-friendly turbines for new hydroelectric dams or the rehabilitations of existing dams.« less

Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

PubMed

Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

2016-10-01

Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. Copyright © 2016 Elsevier B.V. All rights reserved.

Tunable inter-qubit coupling as a resource for gate based quantum computing with superconducting circuits

NASA Astrophysics Data System (ADS)

Chiaro, B.; Neill, C.; Chen, Z.; Dunsworth, A.; Foxen, B.; Quintana, C.; Wenner, J.; Martinis, J. M.; Google Quantum Hardware Team

Fast, high fidelity two qubit gates are an essential requirement of a quantum processor. In this talk, we discuss how the tunable coupling of the gmon architecture provides a pathway for an improved two qubit controlled-Z gate. The maximum inter-qubit coupling strength gmax = 60 MHz is sufficient for fast adiabatic two qubit gates to be performed as quickly as single qubit gates, reducing dephasing errors. Additionally, the ability to turn the coupling off allows all qubits to idle at low magnetic flux sensitivity, further reducing susceptibility to noise. However, the flexibility that this platform offers comes at the expense of increased control complexity. We describe our strategy for addressing the control challenges of the gmon architecture and show experimental progress toward fast, high fidelity controlled-Z gates with gmon qubits.

Neutralization of a single arginine residue gates open a two-pore domain, alkali-activated K+ channel

PubMed Central

Niemeyer, María Isabel; González-Nilo, Fernando D.; Zúñiga, Leandro; González, Wendy; Cid, L. Pablo; Sepúlveda, Francisco V.

2007-01-01

Potassium channels share a common selectivity filter that determines the conduction characteristics of the pore. Diversity in K+ channels is given by how they are gated open. TASK-2, TALK-1, and TALK-2 are two-pore region (2P) KCNK K+ channels gated open by extracellular alkalinization. We have explored the mechanism for this alkalinization-dependent gating using molecular simulation and site-directed mutagenesis followed by functional assay. We show that the side chain of a single arginine residue (R224) near the pore senses pH in TASK-2 with an unusual pKa of 8.0, a shift likely due to its hydrophobic environment. R224 would block the channel through an electrostatic effect on the pore, a situation relieved by its deprotonation by alkalinization. A lysine residue in TALK-2 fulfills the same role but with a largely unchanged pKa, which correlates with an environment that stabilizes its positive charge. In addition to suggesting unified alkaline pH-gating mechanisms within the TALK subfamily of channels, our results illustrate in a physiological context the principle that hydrophobic environment can drastically modulate the pKa of charged amino acids within a protein. PMID:17197424

Effect of knockout of α2δ-1 on action potentials in mouse sensory neurons.

PubMed

Margas, Wojciech; Ferron, Laurent; Nieto-Rostro, Manuela; Schwartz, Arnold; Dolphin, Annette C

2016-08-05

Gene deletion of the voltage-gated calcium channel auxiliary subunit α2δ-1 has been shown previously to have a cardiovascular phenotype, and a reduction in mechano- and cold sensitivity, coupled with delayed development of neuropathic allodynia. We have also previously shown that dorsal root ganglion (DRG) neuron calcium channel currents were significantly reduced in α2δ-1 knockout mice. To extend our findings in these sensory neurons, we have examined here the properties of action potentials (APs) in DRG neurons from α2δ-1 knockout mice in comparison to their wild-type (WT) littermates, in order to dissect how the calcium channels that are affected by α2δ-1 knockout are involved in setting the duration of individual APs and their firing frequency. Our main findings are that there is reduced Ca(2+) entry on single AP stimulation, particularly in the axon proximal segment, reduced AP duration and reduced firing frequency to a 400 ms stimulation in α2δ-1 knockout neurons, consistent with the expected role of voltage-gated calcium channels in these events. Furthermore, lower intracellular Ca(2+) buffering also resulted in reduced AP duration, and a lower frequency of AP firing in WT neurons, mimicking the effect of α2δ-1 knockout. By contrast, we did not obtain any consistent evidence for the involvement of Ca(2+)-activation of large conductance calcium-activated potassium (BK) and small conductance calcium-activated potassium (SK) channels in these events. In conclusion, the reduced Ca(2+) elevation as a result of single AP stimulation is likely to result from the reduced duration of the AP in α2δ-1 knockout sensory neurons.This article is part of the themed issue 'Evolution brings Ca(2+) and ATP together to control life and death'. © 2016 The Authors.

Two-qubit gates and coupling with low-impedance flux qubits

NASA Astrophysics Data System (ADS)

Chow, Jerry; Corcoles, Antonio; Rigetti, Chad; Rozen, Jim; Keefe, George; Rothwell, Mary-Beth; Rohrs, John; Borstelmann, Mark; Divincenzo, David; Ketchen, Mark; Steffen, Matthias

2011-03-01

We experimentally demonstrate the coupling of two low-impedance flux qubits mediated via a transmission line resonator. We explore the viability of experimental coupling protocols which involve selective microwave driving on the qubits independently as well as fast frequency tuning through on-chip flux-bias. Pulse-shaping techniques for single-qubit and two-qubit gates are employed for reducing unwanted leakage and phase errors. A joint readout through the transmission line resonator is used for characterizing single-qubit and two-qubit states.

Technical Note: High temporal resolution characterization of gating response time.

PubMed

Wiersma, Rodney D; McCabe, Bradley P; Belcher, Andrew H; Jensen, Patrick J; Smith, Brett; Aydogan, Bulent

2016-06-01

Low temporal latency between a gating ON/OFF signal and the LINAC beam ON/OFF during respiratory gating is critical for patient safety. Here the authors describe a novel method to precisely measure gating lag times at high temporal resolutions. A respiratory gating simulator with an oscillating platform was modified to include a linear potentiometer for position measurement. A photon diode was placed at linear accelerator isocenter for beam output measurement. The output signals of the potentiometer and diode were recorded simultaneously at 2500 Hz with an analog to digital converter for four different commercial respiratory gating systems. The ON and OFF of the beam signal were located and compared to the expected gating window for both phase and position based gating and the temporal lag times extracted. For phase based gating, a real-time position management (RPM) infrared marker tracking system with a single camera and a RPM system with a stereoscopic camera were measured to have mean gate ON/OFF lag times of 98/90 and 86/44 ms, respectively. For position based gating, an AlignRT 3D surface system and a Calypso magnetic fiducial tracking system were measured to have mean gate ON/OFF lag times of 356/529 and 209/60 ms, respectively. Temporal resolution of the method was high enough to allow characterization of individual gate cycles and was primary limited by the sampling speed of the data recording device. Significant variation of mean gate ON/OFF lag time was found between different gating systems. For certain gating devices, individual gating cycle lag times can vary significantly.

Technical Note: High temporal resolution characterization of gating response time

PubMed Central

Wiersma, Rodney D.; McCabe, Bradley P.; Belcher, Andrew H.; Jensen, Patrick J.; Smith, Brett; Aydogan, Bulent

2016-01-01

Purpose: Low temporal latency between a gating ON/OFF signal and the LINAC beam ON/OFF during respiratory gating is critical for patient safety. Here the authors describe a novel method to precisely measure gating lag times at high temporal resolutions. Methods: A respiratory gating simulator with an oscillating platform was modified to include a linear potentiometer for position measurement. A photon diode was placed at linear accelerator isocenter for beam output measurement. The output signals of the potentiometer and diode were recorded simultaneously at 2500 Hz with an analog to digital converter for four different commercial respiratory gating systems. The ON and OFF of the beam signal were located and compared to the expected gating window for both phase and position based gating and the temporal lag times extracted. Results: For phase based gating, a real-time position management (RPM) infrared marker tracking system with a single camera and a RPM system with a stereoscopic camera were measured to have mean gate ON/OFF lag times of 98/90 and 86/44 ms, respectively. For position based gating, an AlignRT 3D surface system and a Calypso magnetic fiducial tracking system were measured to have mean gate ON/OFF lag times of 356/529 and 209/60 ms, respectively. Conclusions: Temporal resolution of the method was high enough to allow characterization of individual gate cycles and was primary limited by the sampling speed of the data recording device. Significant variation of mean gate ON/OFF lag time was found between different gating systems. For certain gating devices, individual gating cycle lag times can vary significantly. PMID:27277028

Improving the gate fidelity of capacitively coupled spin qubits

NASA Astrophysics Data System (ADS)

Wang, Xin; Barnes, Edwin

2015-03-01

Precise execution of quantum gates acting on two or multiple qubits is essential to quantum computation. For semiconductor spin qubits coupled via capacitive interaction, the best fidelity for a two-qubit gate demonstrated so far is around 70%, insufficient for fault-tolerant quantum computation. In this talk we present control protocols that may substantially improve the robustness of two-qubit gates against both nuclear noise and charge noise. Our pulse sequences incorporate simultaneous dynamical decoupling protocols and are simple enough for immediate experimental realization. Together with existing control protocols for single-qubit gates, our results constitute an important step toward scalable quantum computation using spin qubits. This work is done in collaboration with Sankar Das Sarma and supported by LPS-NSA-CMTC and IARPA-MQCO.

Implementation of quantum logic gates via Stark-tuned Förster resonance in Rydberg atoms

NASA Astrophysics Data System (ADS)

Huang, Xi-Rong; Hu, Chang-Sheng; Shen, Li-Tuo; Yang, Zhen-Biao; Wu, Huai-Zhi

2018-02-01

We present a scheme for implementation of controlled-Z and controlled-NOT gates via rapid adiabatic passage and Stark-tuned Förster resonance. By sweeping the Förster resonance once without passing through it and adiabatically tuning the angle-dependent Rydberg-Rydberg interaction of the dipolar nature, the system can be effectively described by a two-level system with the adiabatic theorem. The single adiabatic passage leads to a gate fidelity as high as 0.999 and a greatly reduced gate operation time. We investigate the scheme by considering an actual atomic level configuration with rubidium atoms, where the fidelity of the controlled-Z gate is still higher than 0.99 under the influence of the Zeeman effect.

Probing pore constriction in a ligand-gated ion channel by trapping a metal ion in the pore upon agonist dissociation.

PubMed

Pittel, Ilya; Witt-Kehati, Dvora; Degani-Katzav, Nurit; Paas, Yoav

2010-08-20

Eukaryotic pentameric ligand-gated ion channels (pLGICs) are receptors activated by neurotransmitters to rapidly transport ions across cell membranes, down their electrochemical gradients. Recent crystal structures of two prokaryotic pLGICs were interpreted to imply that the extracellular side of the transmembrane pore constricts to close the channel (Hilf, R. J., and Dutzler, R. (2009) Nature 457, 115-118; Bocquet, N., Nury, H., Baaden, M., Le Poupon, C., Changeux, J. P., Delarue, M., and Corringer, P. J. (2009) Nature 457, 111-114). Here, we utilized a eukaryotic acetylcholine (ACh)-serotonin chimeric pLGIC that was engineered with histidines to coordinate a metal ion within the channel pore, at its cytoplasmic side. In a previous study, the access of Zn(2+) ions to the engineered histidines had been explored when the channel was either at rest (closed) or active (open) (Paas, Y., Gibor, G., Grailhe, R., Savatier-Duclert, N., Dufresne, V., Sunesen, M., de Carvalho, L. P., Changeux, J. P., and Attali, B. (2005) Proc. Natl. Acad. Sci. U.S.A. 102, 15877-15882). In this study, the interactions of Zn(2+) with the pore were probed upon agonist (ACh) dissociation that triggers the transition of the receptor from the active conformation to the resting conformation (i.e. during deactivation). Application of Zn(2+) onto ACh-bound open receptors obstructed their pore and prevented ionic flow. Removing ACh from its extracellular binding sites to trigger deactivation while Zn(2+) is still bound led to tight trapping of Zn(2+) within the pore. Together with single-channel recordings, made to explore single pore-blocking events, we show that dissociation of ACh causes the gate to shut on a Zn(2+) ion that effectively acts as a "foot in the door." We infer that, upon deactivation, the cytoplasmic side of the pore of the ACh-serotonin receptor chimera constricts to close the channel.

Reversible gating of smart plasmonic molecular traps using thermoresponsive polymers for single-molecule detection

PubMed Central

Zheng, Yuanhui; Soeriyadi, Alexander H.; Rosa, Lorenzo; Ng, Soon Hock; Bach, Udo; Justin Gooding, J.

2015-01-01

Single-molecule surface-enhanced Raman spectroscopy (SERS) has attracted increasing interest for chemical and biochemical sensing. Many conventional substrates have a broad distribution of SERS enhancements, which compromise reproducibility and result in slow response times for single-molecule detection. Here we report a smart plasmonic sensor that can reversibly trap a single molecule at hotspots for rapid single-molecule detection. The sensor was fabricated through electrostatic self-assembly of gold nanoparticles onto a gold/silica-coated silicon substrate, producing a high yield of uniformly distributed hotspots on the surface. The hotspots were isolated with a monolayer of a thermoresponsive polymer (poly(N-isopropylacrylamide)), which act as gates for molecular trapping at the hotspots. The sensor shows not only a good SERS reproducibility but also a capability to repetitively trap and release molecules for single-molecular sensing. The single-molecule sensitivity is experimentally verified using SERS spectral blinking and bianalyte methods. PMID:26549539

Subframe Burst Gating for Raman Spectroscopy in Combustion

NASA Technical Reports Server (NTRS)

Kojima, Jun; Fischer, David; Nguyen, Quang-Viet

2010-01-01

We describe an architecture for spontaneous Raman scattering utilizing a frame-transfer CCD sensor operating in a subframe burst-gating mode to realize time-resolved combustion diagnostics. The technique permits all-electronic optical gating with microsecond shutter speeds 5 J.Ls) without compromising optical throughput or image fidelity. When used in conjunction with a pair of orthogonally polarized excitation lasers, the technique measures single-shot vibrational Raman scattering that is minimally contaminated by problematic optical background noise.

Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

PubMed

Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

2018-04-18

Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

Intelligent layered nanoflare: ``lab-on-a-nanoparticle'' for multiple DNA logic gate operations and efficient intracellular delivery

NASA Astrophysics Data System (ADS)

Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

2014-07-01

DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology. Electronic supplementary information (ESI) available: Additional figures (Table S1, Fig. S1-S5). See DOI: 10.1039/c4nr01676a

Start Up Application Concerns with Field Programmable Gate Arrays (FPGAs)

NASA Technical Reports Server (NTRS)

Katz, Richard B.

1999-01-01

This note is being published to improve the visibility of this subject, as we continue to see problems surface in designs, as well as to add additional information to the previously published note for design engineers. The original application note focused on designing systems with no single point failures using Actel Field Programmable Gate Arrays (FPGAs) for critical applications. Included in that note were the basic principles of operation of the Actel FPGA and a discussion of potential single-point failures. The note also discussed the issue of startup transients for that class of device. It is unfortunate that we continue to see some design problems using these devices. This note will focus on the startup properties of certain electronic components, in general, and current Actel FPGAs, in particular. Devices that are "power-on friendly" are currently being developed by Actel, as a variant of the new SX series of FPGAs. In the ideal world, electronic components would behave much differently than they do in the real world, The chain, of course, starts with the power supply. Ideally, the voltage will immediately rise to a stable V(sub cc) level, of course, it does not. Aside from practical design considerations, inrush current limits of certain capacitors must be observed and the power supply's output may be intentionally slew rate limited to prevent a large current spike on the system power bus. In any event, power supply rise time may range from less than I msec to 100 msec or more.

Comparison of LVEF assessed by 2D echocardiography, gated blood pool SPECT, 99mTc tetrofosmin gated SPECT, and 18F-FDG gated PET with ERNV in patients with CAD and severe LV dysfunction.

PubMed

Raja, Senthil; Mittal, Bhagwant R; Santhosh, Sampath; Bhattacharya, Anish; Rohit, Manoj K

2014-11-01

Left ventricular ejection fraction (LVEF) is the single most important predictor of prognosis in patients with coronary artery disease (CAD) and left ventricular (LV) dysfunction. Equilibrium radionuclide ventriculography (ERNV) is considered the most reliable technique for assessing LVEF. Most of these patients undergo two dimensional (2D) echocardiography and myocardial viability study using gated myocardial perfusion imaging (MPI) or gated F-fluorodeoxyglucose (F-FDG) PET. However, the accuracy of LVEF assessed by these methods is not clear. This study has been designed to assess the correlation and agreement between the LVEF measured by 2D echocardiography, gated blood pool single photon emission computed tomography (SPECT), Tc tetrofosmin gated SPECT, and F-FDG gated PET with ERNV in CAD patients with severe LV dysfunction. Patients with CAD and severe LV dysfunction [ejection fraction (EF) <35 assessed by 2D echocardiography] were prospectively included in the study. These patients underwent ERNV along with gated blood pool SPECT, Tc tetrofosmin gated SPECT, and F-FDG gated PET as per the standard protocol for myocardial viability assessment and LVEF calculation. Spearman's coefficient of correlation (r) was calculated for the different sets of values with significance level kept at a P-value less than 0.05. Bland-Altman plots were inspected to visually assess the between-agreement measurements from different methods. Forty-one patients were prospectively included. LVEF calculated by various radionuclide methods showed good correlation with ERNV as follows: gated blood pool SPECT, r=0.92; MPI gated SPECT, r=0.85; and F-FDG gated PET, r=0.76. However, the correlation between 2D echocardiography and ERNV was poor (r=0.520). The Bland-Altman plot for LVEF measured by all radionuclide methods showed good agreement with ERNV. However, agreement between 2D echocardiography and ERNV is poor, as most of the values in this plot gave a negative difference for low EF and a positive difference for high EF. The mean difference between various techniques [2D echocardiography (a), gated blood pool SPECT (b), MPI gated SPECT (c), F-FDG gated PET (d)] and ERNV (e) was as follows: (a)-(e), 3.3; (b)-(e), 5; (c)-(e), 1.1; and (d)-(e), 2.9. The best possible correlation and agreement was found between MPI gated SPECT and ERNV. This study showed good correlation and agreement between MPI gated SPECT and F-FDG gated PET with ERNV for LVEF calculation in CAD patients with severe LV dysfunction. Thus, subjecting patients who undergo viability assessment by MPI gated SPECT or F-FDG gated PET to a separate procedure like ERNV for LVEF assessment may not be warranted. As the gated blood pool SPECT also showed good correlation and agreement with ERNV for LVEF assessment in CAD patients with severe LV dysfunction, with better characteristics than ERNV, it can be routinely used whenever accurate LVEF assessment is needed.

Voltage-Gated Lipid Ion Channels

PubMed Central

Blicher, Andreas; Heimburg, Thomas

2013-01-01

Synthetic lipid membranes can display channel-like ion conduction events even in the absence of proteins. We show here that these events are voltage-gated with a quadratic voltage dependence as expected from electrostatic theory of capacitors. To this end, we recorded channel traces and current histograms in patch-experiments on lipid membranes. We derived a theoretical current-voltage relationship for pores in lipid membranes that describes the experimental data very well when assuming an asymmetric membrane. We determined the equilibrium constant between closed and open state and the open probability as a function of voltage. The voltage-dependence of the lipid pores is found comparable to that of protein channels. Lifetime distributions of open and closed events indicate that the channel open distribution does not follow exponential statistics but rather power law behavior for long open times. PMID:23823188

Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

PubMed

Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

2013-10-09

In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

Numerical model of a single nanocrystal devoted to the study of disordered nanocrystal floating gates of new flash memories

NASA Astrophysics Data System (ADS)

Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie

2011-05-01

The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.

Single-qubit unitary gates by graph scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumer, Benjamin A.; Underwood, Michael S.; Feder, David L.

2011-12-15

We consider the effects of plane-wave states scattering off finite graphs as an approach to implementing single-qubit unitary operations within the continuous-time quantum walk framework of universal quantum computation. Four semi-infinite tails are attached at arbitrary points of a given graph, representing the input and output registers of a single qubit. For a range of momentum eigenstates, we enumerate all of the graphs with up to n=9 vertices for which the scattering implements a single-qubit gate. As n increases, the number of new unitary operations increases exponentially, and for n>6 the majority correspond to rotations about axes distributed roughly uniformlymore » across the Bloch sphere. Rotations by both rational and irrational multiples of {pi} are found.« less

PhotoGate microscopy: tracking single molecules in a cytoplasm (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yildiz, Ahmet

2016-02-01

Tracking single molecules inside cells reveals the dynamics of biological processes, including receptor trafficking, signaling and cargo transport. However, individual molecules often cannot be resolved inside cells due to their high density in the cellular environment. We developed a photobleaching gate assay, which controls the number of fluorescent particles in a region of interest by repeatedly photobleaching its boundary. Using this method, we tracked single particles at surface densities two orders of magnitude higher than the single-molecule detection limit. We observed ligand-induced dimerization of epidermal growth factor receptors (EGFR) on a live cell membrane. In addition, we tracked individual intraflagellar transport (IFT) trains along the length of a cilium and observed their remodeling at the ciliary tip.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

NASA Astrophysics Data System (ADS)

Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

2018-02-01

Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Parallel logic gates in synthetic gene networks induced by non-Gaussian noise.

PubMed

Xu, Yong; Jin, Xiaoqin; Zhang, Huiqing

2013-11-01

The recent idea of logical stochastic resonance is verified in synthetic gene networks induced by non-Gaussian noise. We realize the switching between two kinds of logic gates under optimal moderate noise intensity by varying two different tunable parameters in a single gene network. Furthermore, in order to obtain more logic operations, thus providing additional information processing capacity, we obtain in a two-dimensional toggle switch model two complementary logic gates and realize the transformation between two logic gates via the methods of changing different parameters. These simulated results contribute to improve the computational power and functionality of the networks.

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

PubMed

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

NASA Astrophysics Data System (ADS)

Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

2018-06-01

Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

Multiplexed charge-locking device for large arrays of quantum devices

NASA Astrophysics Data System (ADS)

Puddy, R. K.; Smith, L. W.; Al-Taie, H.; Chong, C. H.; Farrer, I.; Griffiths, J. P.; Ritchie, D. A.; Kelly, M. J.; Pepper, M.; Smith, C. G.

2015-10-01

We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.

Simulation and parametric analysis of graphene p-n junctions with two rectangular top gates and a single back gate

NASA Astrophysics Data System (ADS)

Nikiforidis, Ioannis; Karafyllidis, Ioannis G.; Dimitrakis, Panagiotis

2018-02-01

Graphene p-n junctions could be the building blocks of future nanoelectronic circuits. While the conductance modulation of graphene p-n junctions formed in devices with one bottom and one top gate have received much attention, there is comparatively little work done on devices with two top gates. Here, we employ tight-bind Hamiltonians and non-equilibrium Green function method to compute in a systematic way the dependence of the conductance of graphene p-n junctions, formed in a device with two top gates, on the device parameters. We present our results in a compact and systematic way, so that the effect of each parameter is clearly shown. Our results show that the device conductance can be effectively modulated, and that graphene devices with two top gates may be used as basic elements in future carbon-based nanoelectronic circuits.

Signatures of Mechanosensitive Gating.

PubMed

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

NASA Astrophysics Data System (ADS)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

Gating geometry studies of thin-walled 17-4PH investment castings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maguire, M.C.; Zanner, F.J.

1992-11-01

The ability to design gating systems that reliably feed and support investment castings is often the result of ``cut-and-try`` methodology. Factors such as hot tearing, porosity, cold shuts, misruns, and shrink are defects often corrected by several empirical gating design iterations. Sandia National Laboratories is developing rules that aid in removing the uncertainty involved in the design of gating systems for investment castings. In this work, gating geometries used for filling of thin walled investment cast 17-4PH stainless steel flat plates were investigated. A full factorial experiment evaluating the influence of metal pour temperature, mold preheat temperature, and mold channelmore » thickness were conducted for orientations that filled a horizontal flat plate from the edge. A single wedge gate geometry was used for the edge-gated configuration. Thermocouples placed along the top of the mold recorded metal front temperatures, and a real-time x-ray imaging system tracked the fluid flow behavior during filling of the casting. Data from these experiments were used to determine the terminal fill volumes and terminal fill times for each gate design.« less

Gating geometry studies of thin-walled 17-4PH investment castings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maguire, M.C.; Zanner, F.J.

1992-01-01

The ability to design gating systems that reliably feed and support investment castings is often the result of cut-and-try'' methodology. Factors such as hot tearing, porosity, cold shuts, misruns, and shrink are defects often corrected by several empirical gating design iterations. Sandia National Laboratories is developing rules that aid in removing the uncertainty involved in the design of gating systems for investment castings. In this work, gating geometries used for filling of thin walled investment cast 17-4PH stainless steel flat plates were investigated. A full factorial experiment evaluating the influence of metal pour temperature, mold preheat temperature, and mold channelmore » thickness were conducted for orientations that filled a horizontal flat plate from the edge. A single wedge gate geometry was used for the edge-gated configuration. Thermocouples placed along the top of the mold recorded metal front temperatures, and a real-time x-ray imaging system tracked the fluid flow behavior during filling of the casting. Data from these experiments were used to determine the terminal fill volumes and terminal fill times for each gate design.« less

Fast quantum logic gates with trapped-ion qubits

NASA Astrophysics Data System (ADS)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

Fast quantum logic gates with trapped-ion qubits.

PubMed

Schäfer, V M; Ballance, C J; Thirumalai, K; Stephenson, L J; Ballance, T G; Steane, A M; Lucas, D M

2018-02-28

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural 'speed limit' of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds-less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

Linear prediction and single-channel recording.

PubMed

Carter, A A; Oswald, R E

1995-08-01

The measurement of individual single-channel events arising from the gating of ion channels provides a detailed data set from which the kinetic mechanism of a channel can be deduced. In many cases, the pattern of dwells in the open and closed states is very complex, and the kinetic mechanism and parameters are not easily determined. Assuming a Markov model for channel kinetics, the probability density function for open and closed time dwells should consist of a sum of decaying exponentials. One method of approaching the kinetic analysis of such a system is to determine the number of exponentials and the corresponding parameters which comprise the open and closed dwell time distributions. These can then be compared to the relaxations predicted from the kinetic model to determine, where possible, the kinetic constants. We report here the use of a linear technique, linear prediction/singular value decomposition, to determine the number of exponentials and the exponential parameters. Using simulated distributions and comparing with standard maximum-likelihood analysis, the singular value decomposition techniques provide advantages in some situations and are a useful adjunct to other single-channel analysis techniques.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

The separate and combined effects of monoamine oxidase inhibition and nicotine on P50 sensory gating.

PubMed

Smith, Dylan M; Fisher, Derek; Blier, Pierre; Illivitsky, Vadim; Knott, Verner

2015-06-01

The cognitive effects of nicotine in humans remain a topic of great interest, due to the continued prevalence of cigarette smoking in society as well as the hypothesis that cognitively impaired populations such as schizophrenia patients use nicotine as a means of self-medicating against deficits of sensory gating. However, chronic smoking can predispose individuals to robust monoamine oxidase (MAO) inhibition, and thus far, the effect of MAO inhibition on human sensory gating is unknown. In this study, we investigated the effects of both nicotine (6-mg gum) and pharmacologically induced MAO-A inhibition via moclobemide (75 mg) on P50 event-related potential-indexed sensory gating in a sample of 24 healthy non-smoking males. Ratio score (rP50) measured gating revealed significant improvement in auditory stimulus suppression after combined nicotine and MAO-A inhibition compared to placebo and to the nicotine-alone condition. This nicotine + MAO-A inhibition-induced efficient gating was consistent regardless of participants' baseline (placebo) gating efficiency, despite the observation that nicotine in the absence of MAO-A inhibition exhibited a detrimental effect on gating in participants with high baseline suppression ratios. Nicotine and monoamine oxidase-inhibiting agents in tobacco smoke appear to exert a synergistic effect on sensory gating, which may contribute to the elevated dependence rates seen in populations with cognitive deficits such as schizophrenia.

Reduction in maximum time uncertainty of paired time signals

DOEpatents

Theodosiou, G.E.; Dawson, J.W.

1983-10-04

Reduction in the maximum time uncertainty (t[sub max]--t[sub min]) of a series of paired time signals t[sub 1] and t[sub 2] varying between two input terminals and representative of a series of single events where t[sub 1][<=]t[sub 2] and t[sub 1]+t[sub 2] equals a constant, is carried out with a circuit utilizing a combination of OR and AND gates as signal selecting means and one or more time delays to increase the minimum value (t[sub min]) of the first signal t[sub 1] closer to t[sub max] and thereby reduce the difference. The circuit may utilize a plurality of stages to reduce the uncertainty by factors of 20--800. 6 figs.

A New Partial Reconfiguration-Based Fault-Injection System to Evaluate SEU Effects in SRAM-Based FPGAs

NASA Astrophysics Data System (ADS)

Sterpone, L.; Violante, M.

2007-08-01

Modern SRAM-based field programmable gate array (FPGA) devices offer high capability in implementing complex system. Unfortunately, SRAM-based FPGAs are extremely sensitive to single event upsets (SEUs) induced by radiation particles. In order to successfully deploy safety- or mission-critical applications, designer need to validate the correctness of the obtained designs. In this paper we describe a system based on partial-reconfiguration for running fault-injection experiments within the configuration memory of SRAM-based FPGAs. The proposed fault-injection system uses the internal configuration capabilities that modern FPGAs offer in order to inject SEU within the configuration memory. Detailed experimental results show that the technique is orders of magnitude faster than previously proposed ones.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Citterio, M.; Camplani, A.; Cannon, M.

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

Reduction in maximum time uncertainty of paired time signals

DOEpatents

Theodosiou, George E.; Dawson, John W.

1983-01-01

Reduction in the maximum time uncertainty (t.sub.max -t.sub.min) of a series of paired time signals t.sub.1 and t.sub.2 varying between two input terminals and representative of a series of single events where t.sub.1 .ltoreq.t.sub.2 and t.sub.1 +t.sub.2 equals a constant, is carried out with a circuit utilizing a combination of OR and AND gates as signal selecting means and one or more time delays to increase the minimum value (t.sub.min) of the first signal t.sub.1 closer to t.sub.max and thereby reduce the difference. The circuit may utilize a plurality of stages to reduce the uncertainty by factors of 20-800.

Towards a DNA Nanoprocessor: Reusable Tile-Integrated DNA Circuits.

PubMed

Gerasimova, Yulia V; Kolpashchikov, Dmitry M

2016-08-22

Modern electronic microprocessors use semiconductor logic gates organized on a silicon chip to enable efficient inter-gate communication. Here, arrays of communicating DNA logic gates integrated on a single DNA tile were designed and used to process nucleic acid inputs in a reusable format. Our results lay the foundation for the development of a DNA nanoprocessor, a small and biocompatible device capable of performing complex analyses of DNA and RNA inputs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Technical Note: High temporal resolution characterization of gating response time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiersma, Rodney D., E-mail: rwiersma@uchicago.edu; McCabe, Bradley P.; Belcher, Andrew H.

2016-06-15

Purpose: Low temporal latency between a gating ON/OFF signal and the LINAC beam ON/OFF during respiratory gating is critical for patient safety. Here the authors describe a novel method to precisely measure gating lag times at high temporal resolutions. Methods: A respiratory gating simulator with an oscillating platform was modified to include a linear potentiometer for position measurement. A photon diode was placed at linear accelerator isocenter for beam output measurement. The output signals of the potentiometer and diode were recorded simultaneously at 2500 Hz with an analog to digital converter for four different commercial respiratory gating systems. The ONmore » and OFF of the beam signal were located and compared to the expected gating window for both phase and position based gating and the temporal lag times extracted. Results: For phase based gating, a real-time position management (RPM) infrared marker tracking system with a single camera and a RPM system with a stereoscopic camera were measured to have mean gate ON/OFF lag times of 98/90 and 86/44 ms, respectively. For position based gating, an AlignRT 3D surface system and a Calypso magnetic fiducial tracking system were measured to have mean gate ON/OFF lag times of 356/529 and 209/60 ms, respectively. Conclusions: Temporal resolution of the method was high enough to allow characterization of individual gate cycles and was primary limited by the sampling speed of the data recording device. Significant variation of mean gate ON/OFF lag time was found between different gating systems. For certain gating devices, individual gating cycle lag times can vary significantly.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Proctor, Timothy; Rudinger, Kenneth; Young, Kevin

Randomized benchmarking (RB) is widely used to measure an error rate of a set of quantum gates, by performing random circuits that would do nothing if the gates were perfect. In the limit of no finite-sampling error, the exponential decay rate of the observable survival probabilities, versus circuit length, yields a single error metric r. For Clifford gates with arbitrary small errors described by process matrices, r was believed to reliably correspond to the mean, over all Clifford gates, of the average gate infidelity between the imperfect gates and their ideal counterparts. We show that this quantity is not amore » well-defined property of a physical gate set. It depends on the representations used for the imperfect and ideal gates, and the variant typically computed in the literature can differ from r by orders of magnitude. We present new theories of the RB decay that are accurate for all small errors describable by process matrices, and show that the RB decay curve is a simple exponential for all such errors. Here, these theories allow explicit computation of the error rate that RB measures (r), but as far as we can tell it does not correspond to the infidelity of a physically allowed (completely positive) representation of the imperfect gates.« less

Making MUSIC: A multiple sampling ionization chamber

NASA Astrophysics Data System (ADS)

Shumard, B.; Henderson, D. J.; Rehm, K. E.; Tang, X. D.

2007-08-01

A multiple sampling ionization chamber (MUSIC) was developed for use in conjunction with the Atlas scattering chamber (ATSCAT). This chamber was developed to study the (α, p) reaction in stable and radioactive beams. The gas filled ionization chamber is used as a target and detector for both particles in the outgoing channel (p + beam particles for elastic scattering or p + residual nucleus for (α, p) reactions). The MUSIC detector is followed by a Si array to provide a trigger for anode events. The anode events are gated by a gating grid so that only (α, p) reactions where the proton reaches the Si detector result in an anode event. The MUSIC detector is a segmented ionization chamber. The active length of the chamber is 11.95 in. and is divided into 16 equal anode segments (3.5 in. × 0.70 in. with 0.3 in. spacing between pads). The dead area of the chamber was reduced by the addition of a Delrin snout that extends 0.875 in. into the chamber from the front face, to which a mylar window is affixed. 0.5 in. above the anode is a Frisch grid that is held at ground potential. 0.5 in. above the Frisch grid is a gating grid. The gating grid functions as a drift electron barrier, effectively halting the gathering of signals. Setting two sets of alternating wires at differing potentials creates a lateral electric field which traps the drift electrons, stopping the collection of anode signals. The chamber also has a reinforced mylar exit window separating the Si array from the target gas. This allows protons from the (α, p) reaction to be detected. The detection of these protons opens the gating grid to allow the drift electrons released from the ionizing gas during the (α, p) reaction to reach the anode segment below the reaction.

Cloning of Plasmodium falciparum by single-cell sorting

PubMed Central

Miao, Jun; Li, Xiaolian; Cui, Liwang

2010-01-01

Malaria parasite cloning is traditionally carried out mainly by using the limiting dilution method, which is laborious, imprecise, and unable to distinguish multiply-infected RBCs. In this study, we used a parasite engineered to express green fluorescent protein (GFP) to evaluate a single-cell sorting method for rapidly cloning Plasmodium falciparum. By dividing a two dimensional scattergram from a cell sorter into 17 gates, we determined the parameters for isolating singly-infected erythrocytes and sorted them into individual cultures. Pre-gating of the engineered parasites for GFP allowed the isolation of almost 100% GFP-positive clones. Compared with the limiting dilution method, the number of parasite clones obtained by single-cell sorting was much higher. Molecular analyses showed that parasite isolates obtained by single-cell sorting were highly homogenous. This highly efficient single-cell sorting method should prove very useful for cloning both P. falciparum laboratory populations from genetic manipulation experiments and clinical samples. PMID:20435038

Towards a portable Raman spectrometer using a concave grating and a time-gated CMOS SPAD.

PubMed

Li, Zhiyun; Deen, M Jamal

2014-07-28

A low-cost, compact Raman spectrometer suitable for the on-line water monitoring applications is explored. A custom-designed concave grating for wavelength selection was fabricated and tested. The detection of the Raman signal is accomplished with a time-gated single photon avalanche diode (TG-SPAD). A fixed gate window of 3.5ns is designed and applied to the TG-SPAD. The temporal resolution of the SPAD was ~60ps when tested with a 7ps, 532nm solid-state laser. To test the efficiency of the gating in fluorescence signal suppression, different detection windows (3ns-0.25ns) within the 3.5ns gate window are used to measure the Raman spectra of Rhodamine B. Strong Raman peaks are resolved with this low-cost system.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Triple-mode single-transistor graphene amplifier and its applications.

PubMed

Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

2010-10-26

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

Photoresponses in Gold Nanoparticle Single-Electron Transistors with Molecular Floating Gates

NASA Astrophysics Data System (ADS)

Noguchi, Yutaka; Yamamoto, Makoto; Ishii, Hisao; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji

2013-11-01

We have proposed a simple method of activating advanced functions in single-electron transistors (SETs) based on the specific properties of individual molecules. As a prototype, we fabricated a copper phthalocyanine (CuPc)-doped SET. The device consists of a gold-nanoparticle (GNP)-based SET doped with CuPc as a photoresponsive floating gate. In this paper, we report the details of the photoresponses of the CuPc-doped SET, such as conductance switching, sensitivity to the wavelength of the incident light, and multiple induced states.

Capacitance of graphenes

NASA Astrophysics Data System (ADS)

Young, Andrea; Dean, Cory; Meric, Inanc; Hone, Jim; Shepard, Ken; Kim, Philip

2010-03-01

Using a transfer procedure and single crystal hexagonal Boron Nitride gate dielectric, we are able to fabricate high mobility graphene devices with local top and back gates. The novel geometry of these devices allows us to measure the spatially averaged compressibility of mono- and bilayer graphene using the ``penetration field'' technique [Eisenstein, J.P. et al. Phys. Rev. Lett. 68, 674 (1992)]. In particular, we analyze the the effects of strong transverse electric fields on the compressibility of graphenes, especially as pertains to charged impurity scattering in single layer graphene and the opening of an energy gap in bilayer.

Quantum computers based on electron spins controlled by ultrafast off-resonant single optical pulses.

PubMed

Clark, Susan M; Fu, Kai-Mei C; Ladd, Thaddeus D; Yamamoto, Yoshihisa

2007-07-27

We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broadband optical pulses to rotate electron spins and provide the clock signal to the system. Nonlocal two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency.

Intelligent layered nanoflare: "lab-on-a-nanoparticle" for multiple DNA logic gate operations and efficient intracellular delivery.

PubMed

Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

2014-08-07

DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a "lab-on-a-nanoparticle", the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.

Diminished auditory sensory gating during active auditory verbal hallucinations.

PubMed

Thoma, Robert J; Meier, Andrew; Houck, Jon; Clark, Vincent P; Lewine, Jeffrey D; Turner, Jessica; Calhoun, Vince; Stephen, Julia

2017-10-01

Auditory sensory gating, assessed in a paired-click paradigm, indicates the extent to which incoming stimuli are filtered, or "gated", in auditory cortex. Gating is typically computed as the ratio of the peak amplitude of the event related potential (ERP) to a second click (S2) divided by the peak amplitude of the ERP to a first click (S1). Higher gating ratios are purportedly indicative of incomplete suppression of S2 and considered to represent sensory processing dysfunction. In schizophrenia, hallucination severity is positively correlated with gating ratios, and it was hypothesized that a failure of sensory control processes early in auditory sensation (gating) may represent a larger system failure within the auditory data stream; resulting in auditory verbal hallucinations (AVH). EEG data were collected while patients (N=12) with treatment-resistant AVH pressed a button to indicate the beginning (AVH-on) and end (AVH-off) of each AVH during a paired click protocol. For each participant, separate gating ratios were computed for the P50, N100, and P200 components for each of the AVH-off and AVH-on states. AVH trait severity was assessed using the Psychotic Symptoms Rating Scales AVH Total score (PSYRATS). The results of a mixed model ANOVA revealed an overall effect for AVH state, such that gating ratios were significantly higher during the AVH-on state than during AVH-off for all three components. PSYRATS score was significantly and negatively correlated with N100 gating ratio only in the AVH-off state. These findings link onset of AVH with a failure of an empirically-defined auditory inhibition system, auditory sensory gating, and pave the way for a sensory gating model of AVH. Copyright © 2017 Elsevier B.V. All rights reserved.

Calcium waves in a grid of clustered channels with synchronous IP3 binding and unbinding.

PubMed

Rückl, M; Rüdiger, S

2016-11-01

Calcium signals in cells occur at multiple spatial scales and variable temporal duration. However, a physical explanation for transitions between long-lasting global oscillations and localized short-term elevations (puffs) of cytoplasmic Ca 2+ is still lacking. Here we introduce a phenomenological, coarse-grained model for the calcium variable, which is represented by ordinary differential equations. Due to its small number of parameters, and its simplicity, this model allows us to numerically study the interplay of multi-scale calcium concentrations with stochastic ion channel gating dynamics even in larger systems. We apply this model to a single cluster of inositol trisphosphate (IP 3 ) receptor channels and find further evidence for the results presented in earlier work: a single cluster may be capable of producing different calcium release types, where long-lasting events are accompanied by unbinding of IP 3 from the receptor (Rückl et al., PLoS Comput. Biol. 11, e1003965 (2015)). Finally, we show the practicability of the model in a grid of 64 clusters which is computationally intractable with previous high-resolution models. Here long-lasting events can lead to synchronized oscillations and waves, while short events stay localized. The frequency of calcium releases as well as their coherence can thereby be regulated by the amplitude of IP 3 stimulation. Finally the model allows for a new explanation of oscillating [IP 3 ], which is not based on metabolic production and degradation of IP 3 .

Action potential propagation recorded from single axonal arbors using multi-electrode arrays.

PubMed

Tovar, Kenneth R; Bridges, Daniel C; Wu, Bian; Randall, Connor; Audouard, Morgane; Jang, Jiwon; Hansma, Paul K; Kosik, Kenneth S

2018-04-11

We report the presence of co-occurring extracellular action potentials (eAPs) from cultured mouse hippocampal neurons among groups of planar electrodes on multi-electrode arrays (MEAs). The invariant sequences of eAPs among co-active electrode groups, repeated co-occurrences and short inter-electrode latencies are consistent with action potential propagation in unmyelinated axons. Repeated eAP co-detection by multiple electrodes was widespread in all our data records. Co-detection of eAPs confirms they result from the same neuron and allows these eAPs to be isolated from all other spikes independently of spike sorting algorithms. We averaged co-occurring events and revealed additional electrodes with eAPs that would otherwise be below detection threshold. We used these eAP cohorts to explore the temperature sensitivity of action potential propagation and the relationship between voltage-gated sodium channel density and propagation velocity. The sequence of eAPs among co-active electrodes 'fingerprints' neurons giving rise to these events and identifies them within neuronal ensembles. We used this property and the non-invasive nature of extracellular recording to monitor changes in excitability at multiple points in single axonal arbors simultaneously over several hours, demonstrating independence of axonal segments. Over several weeks, we recorded changes in inter-electrode propagation latencies and ongoing changes in excitability in different regions of single axonal arbors. Our work illustrates how repeated eAP co-occurrences can be used to extract physiological data from single axons with low electrode density MEAs. However, repeated eAP co-occurrences leads to over-sampling spikes from single neurons and thus can confound traditional spike-train analysis.

Ellipticity dependence of high harmonics generated using 400 nm driving lasers

NASA Astrophysics Data System (ADS)

Cheng, Yan; Khan, Sabih; Zhao, Kun; Zhao, Baozhen; Chini, Michael; Chang, Zenghu

2011-05-01

High order harmonics generated from 400 nm driving pulses hold promise of scaling photon flux of single attosecond pulses by one to two orders of magnitude. We report ellipticity dependence and phase matching of high order harmonics generated from such pulses in Neon gas target and compared them with similar measurements using 800 nm driving pulses. Based on measured ellipticity dependence, we predict that double optical gating (DOG) and generalized double optical gating (GDOG) can be employed to extract intense single attosecond pulses from pulse train, while polarization gating (PG) may not work for this purpose. This material is supported by the U.S. Army Research Office under grant number W911NF-07-1-0475, and by the Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

Optical π phase shift created with a single-photon pulse.

PubMed

Tiarks, Daniel; Schmidt, Steffen; Rempe, Gerhard; Dürr, Stephan

2016-04-01

A deterministic photon-photon quantum logic gate is a long-standing goal. Building such a gate becomes possible if a light pulse containing only one photon imprints a phase shift of π onto another light field. We experimentally demonstrate the generation of such a π phase shift with a single-photon pulse. A first light pulse containing less than one photon on average is stored in an atomic gas. Rydberg blockade combined with electromagnetically induced transparency creates a phase shift for a second light pulse, which propagates through the medium. We measure the π phase shift of the second pulse when we postselect the data upon the detection of a retrieved photon from the first pulse. This demonstrates a crucial step toward a photon-photon gate and offers a variety of applications in the field of quantum information processing.

Reliability Design for Neutron Induced Single-Event Burnout of IGBT

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Ohnishi, Toyokazu; Fujikawa, Touma; Nose, Noboru; Hamada, Kimimori; Ishiko, Masayasu

Single-event burnout (SEB) caused by cosmic ray neutrons leads to catastrophic failures in insulated gate bipolar transistors (IGBTs). It was found experimentally that the incident neutron induced SEB failure rate increases as a function of the applied collector voltage. Moreover, the failure rate increased sharply with an increase in the applied collector voltage when the voltage exceeded a certain threshold value (SEB cutoff voltage). In this paper, transient device simulation results indicate that impact ionization at the n-drift/n+ buffer boundary is a crucially important factor in the turning-on of the parasitic pnp transistor, and eventually latch-up of the parasitic thyristor causes SEB. In addition, the device parameter dependency of the SEB cutoff voltage was analytically derived from the latch-up condition of the parasitic thyristor. As a result, it was confirmed that reducing the current gain of the parasitic transistor, such as by increasing the n-drift region thickness d was effective in increasing the SEB cutoff voltage. Furthermore, `white' neutron-irradiation experiments demonstrated that suppressing the inherent parasitic thyristor action leads to an improvement of the SEB cutoff voltage. It was confirmed that current gain optimization of the parasitic transistor is a crucial factor for establishing highly reliable design against chance failures.

Proton irradiation effects on advanced digital and microwave III-V components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.

1994-09-01

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage wasmore » observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].« less

Proton irradiation effects on advanced digital and microwave III-V components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.

1994-12-01

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage wasmore » observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].« less

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

All-Optical Two-Dimensional Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response

NASA Astrophysics Data System (ADS)

Tatsuura, Satoshi; Wada, Osamu; Furuki, Makoto; Tian, Minquan; Sato, Yasuhiro; Iwasa, Izumi; Pu, Lyong Sun

2001-04-01

In this study, we introduce a new concept of all-optical two-dimensional serial-to-parallel pulse converters. Femtosecond optical pulses can be understood as thin plates of light traveling in space. When a femtosecond signal-pulse train and a single gate pulse were fed onto a material with a finite incident angle, each signal-pulse plate met the gate-pulse plate at different locations in the material due to the time-of-flight effect. Meeting points can be made two-dimensional by adding a partial time delay to the gate pulse. By placing a nonlinear optical material at an appropriate position, two-dimensional serial-to-parallel conversion of a signal-pulse train can be achieved with a single gate pulse. We demonstrated the detection of parallel outputs from a 1-Tb/s optical-pulse train through the use of a BaB2O4 crystal. We also succeeded in demonstrating 1-Tb/s serial-to-parallel operation through the use of a novel organic nonlinear optical material, squarylium-dye J-aggregate film, which exhibits ultrafast recovery of bleached absorption.

Gate-Tuned Thermoelectric Power in Black Phosphorus.

PubMed

Saito, Yu; Iizuka, Takahiko; Koretsune, Takashi; Arita, Ryotaro; Shimizu, Sunao; Iwasa, Yoshihiro

2016-08-10

The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which is recently proved to be an effective tool for the investigation of thermoelectric properties. Here, we report the gate-tuning of thermoelectric power in a black phosphorus (BP) single crystal flake with the thickness of 40 nm. Using an EDLT configuration, we successfully control the thermoelectric power (S) and find that the S of ion-gated BP reached +510 μV/K at 210 K in the hole depleted state, which is much higher than the reported bulk single crystal value of +340 μV/K at 300 K. We compared this experimental data with the first-principles-based calculation and found that this enhancement is qualitatively explained by the effective thinning of the conduction channel of the BP flake and nonuniformity of the channel owing to the gate operation in a depletion mode. Our results provide new opportunities for further engineering BP as a thermoelectric material in nanoscale.

Unimolecular Logic Gate with Classical Input by Single Gold Atoms.

PubMed

Skidin, Dmitry; Faizy, Omid; Krüger, Justus; Eisenhut, Frank; Jancarik, Andrej; Nguyen, Khanh-Hung; Cuniberti, Gianaurelio; Gourdon, Andre; Moresco, Francesca; Joachim, Christian

2018-02-27

By a combination of solution and on-surface chemistry, we synthesized an asymmetric starphene molecule with two long anthracenyl input branches and a short naphthyl output branch on the Au(111) surface. Starting from this molecule, we could demonstrate the working principle of a single molecule NAND logic gate by selectively contacting single gold atoms by atomic manipulation to the longer branches of the molecule. The logical input "1" ("0") is defined by the interaction (noninteraction) of a gold atom with one of the input branches. The output is measured by scanning tunneling spectroscopy following the shift in energy of the electronic tunneling resonances at the end of the short branch of the molecule.

Linear optical quantum computing in a single spatial mode.

PubMed

Humphreys, Peter C; Metcalf, Benjamin J; Spring, Justin B; Moore, Merritt; Jin, Xian-Min; Barbieri, Marco; Kolthammer, W Steven; Walmsley, Ian A

2013-10-11

We present a scheme for linear optical quantum computing using time-bin-encoded qubits in a single spatial mode. We show methods for single-qubit operations and heralded controlled-phase (cphase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn [Nature (London) 409, 46 (2001)] scheme. Our protocol is suited to currently available photonic devices and ideally allows arbitrary numbers of qubits to be encoded in the same spatial mode, demonstrating the potential for time-frequency modes to dramatically increase the quantum information capacity of fixed spatial resources. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84±0.07.

Improved resolution of single channel dwell times reveals mechanisms of binding, priming, and gating in muscle AChR

PubMed Central

Mukhtasimova, Nuriya; daCosta, Corrie J.B.

2016-01-01

The acetylcholine receptor (AChR) from vertebrate skeletal muscle initiates voluntary movement, and its kinetics of activation are crucial for maintaining the safety margin for neuromuscular transmission. Furthermore, the kinetic mechanism of the muscle AChR serves as an archetype for understanding activation mechanisms of related receptors from the Cys-loop superfamily. Here we record currents through single muscle AChR channels with improved temporal resolution approaching half an order of magnitude over our previous best. A range of concentrations of full and partial agonists are used to elicit currents from human wild-type and gain-of-function mutant AChRs. For each agonist–receptor combination, rate constants are estimated from maximum likelihood analysis using a kinetic scheme comprised of agonist binding, priming, and channel gating steps. The kinetic scheme and rate constants are tested by stochastic simulation, followed by incorporation of the experimental step response, sampling rate, background noise, and filter bandwidth. Analyses of the simulated data confirm all rate constants except those for channel gating, which are overestimated because of the established effect of noise on the briefest dwell times. Estimates of the gating rate constants were obtained through iterative simulation followed by kinetic fitting. The results reveal that the agonist association rate constants are independent of agonist occupancy but depend on receptor state, whereas those for agonist dissociation depend on occupancy but not on state. The priming rate and equilibrium constants increase with successive agonist occupancy, and for a full agonist, the forward rate constant increases more than the equilibrium constant; for a partial agonist, the forward rate and equilibrium constants increase equally. The gating rate and equilibrium constants also increase with successive agonist occupancy, but unlike priming, the equilibrium constants increase more than the forward rate constants. As observed for a full and a partial agonist, the gain-of-function mutation affects the relationship between rate and equilibrium constants for priming but not for channel gating. Thus, resolving brief single channel currents distinguishes priming from gating steps and reveals how the corresponding rate and equilibrium constants depend on agonist occupancy. PMID:27353445

Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue

2017-08-01

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

Gating of a pH-sensitive K(2P) potassium channel by an electrostatic effect of basic sensor residues on the selectivity filter.

PubMed

Zúñiga, Leandro; Márquez, Valeria; González-Nilo, Fernando D; Chipot, Christophe; Cid, L Pablo; Sepúlveda, Francisco V; Niemeyer, María Isabel

2011-01-25

K(+) channels share common selectivity characteristics but exhibit a wide diversity in how they are gated open. Leak K(2P) K(+) channels TASK-2, TALK-1 and TALK-2 are gated open by extracellular alkalinization. The mechanism for this alkalinization-dependent gating has been proposed to be the neutralization of the side chain of a single arginine (lysine in TALK-2) residue near the pore of TASK-2, which occurs with the unusual pK(a) of 8.0. We now corroborate this hypothesis by transplanting the TASK-2 extracellular pH (pH(o)) sensor in the background of a pH(o)-insensitive TASK-3 channel, which leads to the restitution of pH(o)-gating. Using a concatenated channel approach, we also demonstrate that for TASK-2 to open, pH(o) sensors must be neutralized in each of the two subunits forming these dimeric channels with no apparent cross-talk between the sensors. These results are consistent with adaptive biasing force analysis of K(+) permeation using a model selectivity filter in wild-type and mutated channels. The underlying free-energy profiles confirm that either a doubly or a singly charged pH(o) sensor is sufficient to abolish ion flow. Atomic detail of the associated mechanism reveals that, rather than a collapse of the pore, as proposed for other K(2P) channels gated at the selectivity filter, an increased height of the energetic barriers for ion translocation accounts for channel blockade at acid pH(o). Our data, therefore, strongly suggest that a cycle of protonation/deprotonation of pH(o)-sensing arginine 224 side chain gates the TASK-2 channel by electrostatically tuning the conformational stability of its selectivity filter.

Gating of a pH-Sensitive K2P Potassium Channel by an Electrostatic Effect of Basic Sensor Residues on the Selectivity Filter

PubMed Central

Zúñiga, Leandro; Márquez, Valeria; González-Nilo, Fernando D.; Chipot, Christophe; Cid, L. Pablo; Sepúlveda, Francisco V.; Niemeyer, María Isabel

2011-01-01

K+ channels share common selectivity characteristics but exhibit a wide diversity in how they are gated open. Leak K2P K+ channels TASK-2, TALK-1 and TALK-2 are gated open by extracellular alkalinization. The mechanism for this alkalinization-dependent gating has been proposed to be the neutralization of the side chain of a single arginine (lysine in TALK-2) residue near the pore of TASK-2, which occurs with the unusual pKa of 8.0. We now corroborate this hypothesis by transplanting the TASK-2 extracellular pH (pHo) sensor in the background of a pHo-insensitive TASK-3 channel, which leads to the restitution of pHo-gating. Using a concatenated channel approach, we also demonstrate that for TASK-2 to open, pHo sensors must be neutralized in each of the two subunits forming these dimeric channels with no apparent cross-talk between the sensors. These results are consistent with adaptive biasing force analysis of K+ permeation using a model selectivity filter in wild-type and mutated channels. The underlying free-energy profiles confirm that either a doubly or a singly charged pHo sensor is sufficient to abolish ion flow. Atomic detail of the associated mechanism reveals that, rather than a collapse of the pore, as proposed for other K2P channels gated at the selectivity filter, an increased height of the energetic barriers for ion translocation accounts for channel blockade at acid pHo. Our data, therefore, strongly suggest that a cycle of protonation/deprotonation of pHo-sensing arginine 224 side chain gates the TASK-2 channel by electrostatically tuning the conformational stability of its selectivity filter. PMID:21283586

Thermal averages in a quantum point contact with a single coherent wave packet.

PubMed

Heller, E J; Aidala, K E; LeRoy, B J; Bleszynski, A C; Kalben, A; Westervelt, R M; Maranowski, K D; Gossard, A C

2005-07-01

A novel formal equivalence between thermal averages of coherent properties (e.g., conductance) and time averages of a single wave packet arises for Fermi gases and certain geometries. In the case of one open channel in a quantum point contact (QPC), only one wave packet history, with the wave packet width equal to the thermal length, completely determines the thermally averaged conductance. The formal equivalence moreover allows very simple physical interpretations of interference features surviving under thermal averaging. Simply put, pieces of the thermal wave packet returning to the QPC along independent paths must arrive at the same time in order to interfere. Remarkably, one immediate result of this approach is that higher temperature leads to narrower wave packets and therefore better resolution of events in the time domain. In effect, experiments at 4.2 K are performing time-gated experiments at better than a gigahertz. Experiments involving thermally averaged ballistic conductance in 2DEGS are presented as an application of this picture.

Single-Pixel Optical Fluctuation Analysis of Calcium Channel Function in Active Zones of Motor Nerve Terminals

PubMed Central

Luo, Fujun; Dittrich, Markus; Stiles, Joel R.; Meriney, Stephen D.

2011-01-01

We used high-resolution fluorescence imaging and single-pixel optical fluctuation analysis to estimate the opening probability of individual voltage-gated calcium (Ca2+) channels during an action potential and the number of such Ca2+ channels within active zones of frog neuromuscular junctions. Analysis revealed ~36 Ca2+ channels within each active zone, similar to the number of docked synaptic vesicles but far less than the total number of transmembrane particles reported based on freeze-fracture analysis (~200–250). The probability that each channel opened during an action potential was only ~0.2. These results suggest why each active zone averages only one quantal release event during every other action potential, despite a substantial number of docked vesicles. With sparse Ca2+ channels and low opening probability, triggering of fusion for each vesicle is primarily controlled by Ca2+ influx through individual Ca2+ channels. In contrast, the entire synapse is highly reliable because it contains hundreds of active zones. PMID:21813687

Experimental fault-tolerant universal quantum gates with solid-state spins under ambient conditions

PubMed Central

Rong, Xing; Geng, Jianpei; Shi, Fazhan; Liu, Ying; Xu, Kebiao; Ma, Wenchao; Kong, Fei; Jiang, Zhen; Wu, Yang; Du, Jiangfeng

2015-01-01

Quantum computation provides great speedup over its classical counterpart for certain problems. One of the key challenges for quantum computation is to realize precise control of the quantum system in the presence of noise. Control of the spin-qubits in solids with the accuracy required by fault-tolerant quantum computation under ambient conditions remains elusive. Here, we quantitatively characterize the source of noise during quantum gate operation and demonstrate strategies to suppress the effect of these. A universal set of logic gates in a nitrogen-vacancy centre in diamond are reported with an average single-qubit gate fidelity of 0.999952 and two-qubit gate fidelity of 0.992. These high control fidelities have been achieved at room temperature in naturally abundant 13C diamond via composite pulses and an optimized control method. PMID:26602456

Mechanical gating of a mechanochemical reaction cascade

NASA Astrophysics Data System (ADS)

Wang, Junpeng; Kouznetsova, Tatiana B.; Boulatov, Roman; Craig, Stephen L.

2016-11-01

Covalent polymer mechanochemistry offers promising opportunities for the control and engineering of reactivity. To date, covalent mechanochemistry has largely been limited to individual reactions, but it also presents potential for intricate reaction systems and feedback loops. Here we report a molecular architecture, in which a cyclobutane mechanophore functions as a gate to regulate the activation of a second mechanophore, dichlorocyclopropane, resulting in a mechanochemical cascade reaction. Single-molecule force spectroscopy, pulsed ultrasonication experiments and DFT-level calculations support gating and indicate that extra force of >0.5 nN needs to be applied to a polymer of gated gDCC than of free gDCC for the mechanochemical isomerization gDCC to proceed at equal rate. The gating concept provides a mechanism by which to regulate stress-responsive behaviours, such as load-strengthening and mechanochromism, in future materials designs.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

A Controlled-Phase Gate via Adiabatic Rydberg Dressing of Neutral Atoms

NASA Astrophysics Data System (ADS)

Keating, Tyler; Deutsch, Ivan; Cook, Robert; Biederman, Grant; Jau, Yuan-Yu

2014-05-01

The dipole blockade effect between Rydberg atoms is a promising tool for quantum information processing in neutral atoms. So far, most efforts to perform a quantum logic gate with this effect have used resonant laser pulses to excite the atoms, which makes the system particularly susceptible to decoherence through thermal motional effects. We explore an alternative scheme in which the atomic ground states are adiabatically ``dressed'' by turning on an off-resonant laser. We analyze the implementation of a CPHASE gate using this mechanism and find that fidelities of >99% should be possible with current technology, owing primarily to the suppression of motional errors. We also discuss how such a scheme could be generalized to perform more complicated, multi-qubit gates; in particular, a simple generalization would allow us to perform a Toffoli gate in a single step.

NASA Univision Hispanic Education Campaign

NASA Image and Video Library

2010-02-23

Melinda French Gates, of the Bill & Melinda Gates Foundation, speaks during an event at the National Press Club in Washington, Tuesday, Feb. 23, 2010. NASA is working with Univision Communications Inc. to develop a partnership in support of the Spanish-language media outlet's initiative to improve high school graduation rates, prepare Hispanic students for college, and encourage them to pursue careers in science, technology, engineering and mathematics, or STEM, disciplines. Photo Credit: (NASA/Bill Ingalls)

NASA Univision Hispanic Education Campaign

NASA Image and Video Library

2010-02-23

Melinda French Gates, of the Bill & Melinda Gates Foundation speaks at an event at the National Press Club in Washington, Tuesday, Feb. 23, 2010. NASA is working with Univision Communications Inc. to develop a partnership in support of the Spanish-language media outlet's initiative to improve high school graduation rates, prepare Hispanic students for college, and encourage them to pursue careers in science, technology, engineering and mathematics, or STEM, disciplines. Photo Credit: (NASA/Bill Ingalls)

Molecule counting with alkanethiol and DNA immobilized on gold microplates for extended gate FET.

PubMed

Cao, Zhong; Xiao, Zhong-Liang; Zhang, Ling; Luo, Dong-Mei; Kamahori, Masao; Shimoda, Maki

2013-04-01

Several molecule counting methods based on electrochemical characterization of alkanethiol and thiolated single-stranded oligonucleotide (HS-ssDNA) immobilized on gold microplates, which were used as extended gates of field effect transistors (FETs), have been investigated in this paper. The surface density of alkanethiol and DNA monolayers on gold microplates were quantitatively evaluated from the reductive desorption charge by using cyclic voltammetry (CV) and fast CV (FCV) methods in strong alkali solution. Typically, the surface density of 6-hydroxy-1-hexanethiol (6-HHT) was evaluated to be 4.639 molecules/nm(2), and the 28 base-pair dsDNA about 1.226-4.849 molecules/100 nm(2) on Au microplates after post-treatment with 6-HHT. The behaviors on surface potential and capacitance of different aminoalkanethiols on Au microplates were measured in 0.1 mol/L Na2SO4 and 10 mmol/L Tris-HCl (pH=7.4) solutions, indicating that the surface potential increases and the double-layer capacitance decreases with the length of carbon chain increased for the thiol monolayers, which obey a physics relationship for a capacitor. Comparably, a simple sensing method based on the electronic signals of biochemical reaction events on DNA immobilization and hybridization at the Au surface of the extended gate FET (EGFET) was developed, with which the surface density of the hybridized dsDNA on the gold surface of the EGFET was evaluated to be 1.36 molecules per 100 nm(2), showing that the EGFET is a promising sensing biochip for DNA molecule counting. Copyright © 2012 Elsevier B.V. All rights reserved.

Integrated System Technologies for Modular Trapped Ion Quantum Information Processing

NASA Astrophysics Data System (ADS)

Crain, Stephen G.

Although trapped ion technology is well-suited for quantum information science, scalability of the system remains one of the main challenges. One of the challenges associated with scaling the ion trap quantum computer is the ability to individually manipulate the increasing number of qubits. Using micro-mirrors fabricated with micro-electromechanical systems (MEMS) technology, laser beams are focused on individual ions in a linear chain and steer the focal point in two dimensions. Multiple single qubit gates are demonstrated on trapped 171Yb+ qubits and the gate performance is characterized using quantum state tomography. The system features negligible crosstalk to neighboring ions (< 3e-4), and switching speeds comparable to typical single qubit gate times (< 2 mus). In a separate experiment, photons scattered from the 171Yb+ ion are coupled into an optical fiber with 63% efficiency using a high numerical aperture lens (0.6 NA). The coupled photons are directed to superconducting nanowire single photon detectors (SNSPD), which provide a higher detector efficiency (69%) compared to traditional photomultiplier tubes (35%). The total system photon collection efficiency is increased from 2.2% to 3.4%, which allows for fast state detection of the qubit. For a detection beam intensity of 11 mW/cm 2, the average detection time is 23.7 mus with 99.885(7)% detection fidelity. The technologies demonstrated in this thesis can be integrated to form a single quantum register with all of the necessary resources to perform local gates as well as high fidelity readout and provide a photon link to other systems.

Phototransistor based on single In2Se3 nanosheets

NASA Astrophysics Data System (ADS)

Li, Qin-Liang; Liu, Chang-Hai; Nie, Yu-Ting; Chen, Wen-Hua; Gao, Xu; Sun, Xu-Hui; Wang, Sui-Dong

2014-11-01

Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3 nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications.Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3 nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications. Electronic supplementary information (ESI) available: SEM images of typical In2Se3 nanosheets, TEM-EDX spectrum of single In2Se3 nanosheets, STEM image and elemental mapping of an In2Se3 nanosheet, Scherrer sizes of In2Se3 nanosheets derived from the XRD pattern, statistics of In2Se3 nanosheet thickness, and photoresponse of an In2Se3 nanosheet phototransistor. See DOI: 10.1039/c4nr04404e

Quantum state matching of qubits via measurement-induced nonlinear transformations

NASA Astrophysics Data System (ADS)

Kálmán, Orsolya; Kiss, Tamás

2018-03-01

We consider the task of deciding whether an unknown qubit state falls in a prescribed neighborhood of a reference state. We assume that several copies of the unknown state are given and apply a unitary operation pairwise on them combined with a postselection scheme conditioned on the measurement result obtained on one of the qubits of the pair. The resulting transformation is a deterministic, nonlinear, chaotic map in the Hilbert space. We derive a class of these transformations capable of orthogonalizing nonorthogonal qubit states after a few iterations. These nonlinear maps orthogonalize states which correspond to the two different convergence regions of the nonlinear map. Based on the analysis of the border (the so-called Julia set) between the two regions of convergence, we show that it is always possible to find a map capable of deciding whether an unknown state is within a neighborhood of fixed radius around a desired quantum state. We analyze which one- and two-qubit operations would physically realize the scheme. It is possible to find a single two-qubit unitary gate for each map or, alternatively, a universal special two-qubit gate together with single-qubit gates in order to carry out the task. We note that it is enough to have a single physical realization of the required gates due to the iterative nature of the scheme.

Construction of a fuzzy and Boolean logic gates based on DNA.

PubMed

Zadegan, Reza M; Jepsen, Mette D E; Hildebrandt, Lasse L; Birkedal, Victoria; Kjems, Jørgen

2015-04-17

Logic gates are devices that can perform logical operations by transforming a set of inputs into a predictable single detectable output. The hybridization properties, structure, and function of nucleic acids can be used to make DNA-based logic gates. These devices are important modules in molecular computing and biosensing. The ideal logic gate system should provide a wide selection of logical operations, and be integrable in multiple copies into more complex structures. Here we show the successful construction of a small DNA-based logic gate complex that produces fluorescent outputs corresponding to the operation of the six Boolean logic gates AND, NAND, OR, NOR, XOR, and XNOR. The logic gate complex is shown to work also when implemented in a three-dimensional DNA origami box structure, where it controlled the position of the lid in a closed or open position. Implementation of multiple microRNA sensitive DNA locks on one DNA origami box structure enabled fuzzy logical operation that allows biosensing of complex molecular signals. Integrating logic gates with DNA origami systems opens a vast avenue to applications in the fields of nanomedicine for diagnostics and therapeutics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Keall, Paul J., E-mail: paul.keall@sydney.edu.au; Ng, Jin Aun; Juneja, Prabhjot

Purpose: Kilovoltage intrafraction monitoring (KIM) is a new real-time 3-dimensional image guidance method. Unlike previous real-time image guidance methods, KIM uses a standard linear accelerator without any additional equipment needed. The first prospective clinical trial of KIM is underway for prostate cancer radiation therapy. In this paper we report on the measured motion accuracy and precision using real-time KIM-guided gating. Methods and Materials: Imaging and motion information from the first 200 fractions from 6 patient prostate cancer radiation therapy volumetric modulated arc therapy treatments were analyzed. A 3-mm/5-second action threshold was used to trigger a gating event where the beammore » is paused and the couch position adjusted to realign the prostate to the treatment isocenter. To quantify the in vivo accuracy and precision, KIM was compared with simultaneously acquired kV/MV triangulation for 187 fractions. Results: KIM was successfully used in 197 of 200 fractions. Gating events occurred in 29 fractions (14.5%). In these 29 fractions, the percentage of beam-on time, the prostate displacement was >3 mm from the isocenter position, reduced from 73% without KIM to 24% with KIM-guided gating. Displacements >5 mm were reduced from 16% without KIM to 0% with KIM. The KIM accuracy was measured at <0.3 mm in all 3 dimensions. The KIM precision was <0.6 mm in all 3 dimensions. Conclusions: Clinical implementation of real-time KIM image guidance combined with gating for prostate cancer eliminates large prostate displacements during treatment delivery. Both in vivo KIM accuracy and precision are well below 1 mm.« less

Implementation of cascade logic gates and majority logic gate on a simple and universal molecular platform.

PubMed

Gao, Jinting; Liu, Yaqing; Lin, Xiaodong; Deng, Jiankang; Yin, Jinjin; Wang, Shuo

2017-10-25

Wiring a series of simple logic gates to process complex data is significantly important and a large challenge for untraditional molecular computing systems. The programmable property of DNA endows its powerful application in molecular computing. In our investigation, it was found that DNA exhibits excellent peroxidase-like activity in a colorimetric system of TMB/H 2 O 2 /Hemin (TMB, 3,3', 5,5'-Tetramethylbenzidine) in the presence of K + and Cu 2+ , which is significantly inhibited by the addition of an antioxidant. According to the modulated catalytic activity of this DNA-based catalyst, three cascade logic gates including AND-OR-INH (INHIBIT), AND-INH and OR-INH were successfully constructed. Interestingly, by only modulating the concentration of Cu 2+ , a majority logic gate with a single-vote veto function was realized following the same threshold value as that of the cascade logic gates. The strategy is quite straightforward and versatile and provides an instructive method for constructing multiple logic gates on a simple platform to implement complex molecular computing.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F.

2016-05-16

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

Operation of a gated field emitter using an individual carbon nanofiber cathode

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Ellis, E. D.; Britton, C. L.; Simpson, M. L.; Lowndes, D. H.; Baylor, L. R.

2001-11-01

We report on the operation of an integrated gated cathode device using a single vertically aligned carbon nanofiber as the field emission element. This device is capable of operation in a moderate vacuum for extended periods of time without experiencing a degradation of performance. Less than 1% of the total emitted current is collected by the gate electrode, indicating that the emitted electron beam is highly collimated. As a consequence, this device is ideal for applications that require well-focused electron emission from a microscale structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven; Breemen, A. J. J. M. van

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

What Randomized Benchmarking Actually Measures

DOE PAGES

Proctor, Timothy; Rudinger, Kenneth; Young, Kevin; ...

2017-09-28

Randomized benchmarking (RB) is widely used to measure an error rate of a set of quantum gates, by performing random circuits that would do nothing if the gates were perfect. In the limit of no finite-sampling error, the exponential decay rate of the observable survival probabilities, versus circuit length, yields a single error metric r. For Clifford gates with arbitrary small errors described by process matrices, r was believed to reliably correspond to the mean, over all Clifford gates, of the average gate infidelity between the imperfect gates and their ideal counterparts. We show that this quantity is not amore » well-defined property of a physical gate set. It depends on the representations used for the imperfect and ideal gates, and the variant typically computed in the literature can differ from r by orders of magnitude. We present new theories of the RB decay that are accurate for all small errors describable by process matrices, and show that the RB decay curve is a simple exponential for all such errors. Here, these theories allow explicit computation of the error rate that RB measures (r), but as far as we can tell it does not correspond to the infidelity of a physically allowed (completely positive) representation of the imperfect gates.« less

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

NASA Astrophysics Data System (ADS)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.

PubMed

Liao, P H; Peng, K P; Lin, H C; George, T; Li, P W

2018-05-18

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si 1-x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si 1-x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.

Quantum information processing by weaving quantum Talbot carpets

NASA Astrophysics Data System (ADS)

Farías, Osvaldo Jiménez; de Melo, Fernando; Milman, Pérola; Walborn, Stephen P.

2015-06-01

Single-photon interference due to passage through a periodic grating is considered in a novel proposal for processing D -dimensional quantum systems (quDits) encoded in the spatial degrees of freedom of light. We show that free-space propagation naturally implements basic single-quDit gates by means of the Talbot effect: an intricate time-space carpet of light in the near-field diffraction regime. By adding a diagonal phase gate, we show that a complete set of single-quDit gates can be implemented. We then introduce a spatially dependent beam splitter that allows for projective measurements in the computational basis and can be used for the implementation of controlled operations between two quDits. Universal quantum information processing can then be implemented with linear optics and ancilla photons via postselection and feed-forward following the original proposal of Knill-Laflamme and Milburn. Although we consider photons, our scheme should be directly applicable to a number of other physical systems. Interpretation of the Talbot effect as a quantum logic operation provides a beautiful and interesting way to visualize quantum computation through wave propagation and interference.

Implementation of Basic and Universal Gates In a single Circuit Based On Quantum-dot Cellular Automata Using Multi-Layer Crossbar Wire

NASA Astrophysics Data System (ADS)

Bhowmik, Dhrubajyoti; Saha, Apu Kr; Dutta, Paramartha; Nandi, Supratim

2017-08-01

Quantum-dot Cellular Automata (QCA) is one of the most substitutes developing nanotechnologies for electronic circuits, as a result of lower force utilization, higher speed and smaller size in correlation with CMOS innovation. The essential devices, a Quantum-dot cell can be utilized to logic gates and wires. As it is the key building block on nanotechnology circuits. By applying simple gates, the hardware requirements for a QCA circuit can be decreased and circuits can be less complex as far as level, delay and cell check. This article exhibits an unobtrusive methodology for actualizing novel upgraded simple and universal gates, which can be connected to outline numerous variations of complex QCA circuits. Proposed gates are straightforward in structure and capable as far as implementing any digital circuits. The main aim is to build all basic and universal gates in a simple circuit with and without crossbar-wire. Simulation results and physical relations affirm its handiness in actualizing each advanced circuit.

P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

2018-04-01

In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

Functional anatomy of an allosteric protein

NASA Astrophysics Data System (ADS)

Purohit, Prasad; Gupta, Shaweta; Jadey, Snehal; Auerbach, Anthony

2013-12-01

Synaptic receptors are allosteric proteins that switch on and off to regulate cell signalling. Here, we use single-channel electrophysiology to measure and map energy changes in the gating conformational change of a nicotinic acetylcholine receptor. Two separated regions in the α-subunits—the transmitter-binding sites and αM2-αM3 linkers in the membrane domain—have the highest ϕ-values (change conformation the earliest), followed by the extracellular domain, most of the membrane domain and the gate. Large gating-energy changes occur at the transmitter-binding sites, α-subunit interfaces, the αM1 helix and the gate. We hypothesize that rearrangements of the linkers trigger the global allosteric transition, and that the hydrophobic gate unlocks in three steps. The mostly local character of side-chain energy changes and the similarly high ϕ-values of separated domains, both with and without ligands, suggest that gating is not strictly a mechanical process initiated by the affinity change for the agonist.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Structure of the voltage-gated K⁺ channel Eag1 reveals an alternative voltage sensing mechanism.

PubMed

Whicher, Jonathan R; MacKinnon, Roderick

2016-08-12

Voltage-gated potassium (K(v)) channels are gated by the movement of the transmembrane voltage sensor, which is coupled, through the helical S4-S5 linker, to the potassium pore. We determined the single-particle cryo-electron microscopy structure of mammalian K(v)10.1, or Eag1, bound to the channel inhibitor calmodulin, at 3.78 angstrom resolution. Unlike previous K(v) structures, the S4-S5 linker of Eag1 is a five-residue loop and the transmembrane segments are not domain swapped, which suggest an alternative mechanism of voltage-dependent gating. Additionally, the structure and position of the S4-S5 linker allow calmodulin to bind to the intracellular domains and to close the potassium pore, independent of voltage-sensor position. The structure reveals an alternative gating mechanism for K(v) channels and provides a template to further understand the gating properties of Eag1 and related channels. Copyright © 2016, American Association for the Advancement of Science.

Structure of a eukaryotic cyclic nucleotide-gated channel

PubMed Central

Li, Minghui; Zhou, Xiaoyuan; Wang, Shu; Michailidis, Ioannis; Gong, Ye; Su, Deyuan; Li, Huan; Li, Xueming; Yang, Jian

2018-01-01

Summary Cyclic nucleotide-gated (CNG) channels are essential for vision and olfaction. They belong to the voltage-gated ion channel superfamily but their activities are controlled by intracellular cyclic nucleotides instead of transmembrane voltage. Here we report a 3.5 Å-resolution single-particle electron cryomicroscopy structure of a CNG channel from C. elegans in the cGMP-bound open state. The channel has an unusual voltage-sensor-like domain (VSLD), accounting for its deficient voltage dependence. A C-terminal linker connecting S6 and the cyclic nucleotide-binding domain interacts directly with both the VSLD and pore domain, forming a gating ring that couples conformational changes triggered by cyclic nucleotide binding to the gate. The selectivity filter is lined by the carboxylate side chains of a functionally important glutamate and three rings of backbone carbonyls. This structure provides a new framework for understanding mechanisms of ion permeation, gating and channelopathy of CNG channels and cyclic nucleotide modulation of related channels. PMID:28099415

Coupling two spin qubits with a high-impedance resonator

NASA Astrophysics Data System (ADS)

Harvey, S. P.; Bøttcher, C. G. L.; Orona, L. A.; Bartlett, S. D.; Doherty, A. C.; Yacoby, A.

2018-06-01

Fast, high-fidelity single and two-qubit gates are essential to building a viable quantum information processor, but achieving both in the same system has proved challenging for spin qubits. We propose and analyze an approach to perform a long-distance two-qubit controlled phase (CPHASE) gate between two singlet-triplet qubits using an electromagnetic resonator to mediate their interaction. The qubits couple longitudinally to the resonator, and by driving the qubits near the resonator's frequency, they can be made to acquire a state-dependent geometric phase that leads to a CPHASE gate independent of the initial state of the resonator. Using high impedance resonators enables gate times of order 10 ns while maintaining long coherence times. Simulations show average gate fidelities of over 96% using currently achievable experimental parameters and over 99% using state-of-the-art resonator technology. After optimizing the gate fidelity in terms of parameters tuneable in situ, we find it takes a simple power-law form in terms of the resonator's impedance and quality and the qubits' noise bath.

Simultaneous G-Quadruplex DNA Logic.

PubMed

Bader, Antoine; Cockroft, Scott L

2018-04-03

A fundamental principle of digital computer operation is Boolean logic, where inputs and outputs are described by binary integer voltages. Similarly, inputs and outputs may be processed on the molecular level as exemplified by synthetic circuits that exploit the programmability of DNA base-pairing. Unlike modern computers, which execute large numbers of logic gates in parallel, most implementations of molecular logic have been limited to single computing tasks, or sensing applications. This work reports three G-quadruplex-based logic gates that operate simultaneously in a single reaction vessel. The gates respond to unique Boolean DNA inputs by undergoing topological conversion from duplex to G-quadruplex states that were resolved using a thioflavin T dye and gel electrophoresis. The modular, addressable, and label-free approach could be incorporated into DNA-based sensors, or used for resolving and debugging parallel processes in DNA computing applications. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Phagocytosis: studies by optical tweezers and time-resolved microspectrofluorometry

NASA Astrophysics Data System (ADS)

Schneckenburger, Herbert; Sailer, Reinhard; Hendinger, Anita; Gschwend, Michael H.; Bauer, Manfred; Strauss, Wolfgang S. L.

1999-01-01

Cellular uptake of transparent Latex particles by J774A.1 mouse macrophages has been studied: First, single beads were kept within an optical light trap and located in close vicinity to individual cells. Uptake of the beads was visualized, and intrinsic fluorescence was detected in the spectral range of 420 - 530 nm. Second, time-gated fluorescence spectra of single cells were recorded at pre- selected times during one hour after cellular uptake. A rapid increase of autofluorescence and a subsequent decrease to the level of control cells within about 10 min. was measured within a time gate of 0 - 5 ns after the exciting laser pulses, and attributed to the 'free' coenzyme NAD(P)H. In contrast, fluorescence increase of NAD(P)H bound to proteins (measured within time gates of 5 - 10 ns or 10 - 15 ns) was less pronounced, and the subsequent decrease occurred within a longer period (about one hour).

Tuning charge and correlation effects for a single molecule on a graphene device

DOE PAGES

Wickenburg, Sebastian; Lu, Jiong; Lischner, Johannes; ...

2016-11-25

The ability to understand and control the electronic properties of individual molecules in a device environment is crucial for developing future technologies at the nanometre scale and below. Achieving this, however, requires the creation of three-terminal devices that allow single molecules to be both gated and imaged at the atomic scale. We have accomplished this by integrating a graphene field effect transistor with a scanning tunnelling microscope, thus allowing gate-controlled charging and spectroscopic interrogation of individual tetrafluoro-tetracyanoquinodimethane molecules. We observe a non-rigid shift in the molecule’s lowest unoccupied molecular orbital energy (relative to the Dirac point) as a function ofmore » gate voltage due to graphene polarization effects. Our results show that electron–electron interactions play an important role in how molecular energy levels align to the graphene Dirac point, and may significantly influence charge transport through individual molecules incorporated in graphene-based nanodevices.« less

Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

PubMed

Bahar, Ali Newaz; Waheed, Sajjad

2016-01-01

The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit.

Single array of magnetic vortex disks uses in-plane anisotropy to create different logic gates

NASA Astrophysics Data System (ADS)

Vigo-Cotrina, H.; Guimarães, A. P.

2017-11-01

Using micromagnetic simulation, we show that in-plane uniaxial magnetic anisotropy (IPUA) can be used to obtain FAN-OUT, AND and OR gates in an array of coupled disks with magnetic vortex configuration. First, we studied the influence of the direction of application of the IPUA on the energy transfer time (τ) between two identical coupled nanodisks. We found that when the direction of the IPUA is along the x axis the magnetic interaction increases, allowing shorter values of τ , while the IPUA along the y direction has the opposite effect. The magnetic interactions between the nanodisks along x and y directions (the coupling integrals) as a function of the uniaxial anisotropy constant (Kσ) were obtained using a simple dipolar model. Next, we demonstrated that choosing a suitable direction of application of the IPUA, it is possible to create several different logic gates with a single array of coupled nanodisks.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

ScienceCinema

Chu, Steven; Gates, Bill; Podesta, John

2018-05-14

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called Fireside Chat that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Single mechanically-gated cation channel currents can trigger action potentials in neocortical and hippocampal pyramidal neurons.

PubMed

Nikolaev, Yury A; Dosen, Peter J; Laver, Derek R; van Helden, Dirk F; Hamill, Owen P

2015-05-22

The mammalian brain is a mechanosensitive organ that responds to different mechanical forces ranging from intrinsic forces implicated in brain morphogenesis to extrinsic forces that can cause concussion and traumatic brain injury. However, little is known of the mechanosensors that transduce these forces. In this study we use cell-attached patch recording to measure single mechanically-gated (MG) channel currents and their affects on spike activity in identified neurons in neonatal mouse brain slices. We demonstrate that both neocortical and hippocampal pyramidal neurons express stretch-activated MG cation channels that are activated by suctions of ~25mm Hg, have a single channel conductance for inward current of 50-70pS and show weak selectivity for alkali metal cations (i.e., Na(+)

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

NASA Astrophysics Data System (ADS)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

Precise single-qubit control of the reflection phase of a photon mediated by a strongly-coupled ancilla–cavity system

NASA Astrophysics Data System (ADS)

Motzoi, F.; Mølmer, K.

2018-05-01

We propose to use the interaction between a single qubit atom and a surrounding ensemble of three level atoms to control the phase of light reflected by an optical cavity. Our scheme employs an ensemble dark resonance that is perturbed by the qubit atom to yield a single-atom single photon gate. We show here that off-resonant excitation towards Rydberg states with strong dipolar interactions offers experimentally-viable regimes of operations with low errors (in the 10‑3 range) as required for fault-tolerant optical-photon, gate-based quantum computation. We also propose and analyze an implementation within microwave circuit-QED, where a strongly-coupled ancilla superconducting qubit can be used in the place of the atomic ensemble to provide high-fidelity coupling to microwave photons.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Holonomic Quantum Control by Coherent Optical Excitation in Diamond.

PubMed

Zhou, Brian B; Jerger, Paul C; Shkolnikov, V O; Heremans, F Joseph; Burkard, Guido; Awschalom, David D

2017-10-06

Although geometric phases in quantum evolution are historically overlooked, their active control now stimulates strategies for constructing robust quantum technologies. Here, we demonstrate arbitrary single-qubit holonomic gates from a single cycle of nonadiabatic evolution, eliminating the need to concatenate two separate cycles. Our method varies the amplitude, phase, and detuning of a two-tone optical field to control the non-Abelian geometric phase acquired by a nitrogen-vacancy center in diamond over a coherent excitation cycle. We demonstrate the enhanced robustness of detuned gates to excited-state decoherence and provide insights for optimizing fast holonomic control in dissipative quantum systems.

Range estimation techniques in single-station thunderstorm warning sensors based upon gated, wideband, magnetic direction finder technology

NASA Technical Reports Server (NTRS)

Pifer, Alburt E.; Hiscox, William L.; Cummins, Kenneth L.; Neumann, William T.

1991-01-01

Gated, wideband, magnetic direction finders (DFs) were originally designed to measure the bearing of cloud-to-ground lightning relative to the sensor. A recent addition to this device uses proprietary waveform discrimination logic to select return stroke signatures and certain range dependent features in the waveform to provide an estimate of range of flashes within 50 kms. The enhanced ranging techniques are discussed which were designed and developed for use in single station thunderstorm warning sensor. Included are the results of on-going evaluations being conducted under a variety of meteorological and geographic conditions.

Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

PubMed

Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

2016-01-13

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Optimal control of quantum rings by terahertz laser pulses.

PubMed

Räsänen, E; Castro, A; Werschnik, J; Rubio, A; Gross, E K U

2007-04-13

Complete control of single-electron states in a two-dimensional semiconductor quantum-ring model is established, opening a path into coherent laser-driven single-gate qubits. The control scheme is developed in the framework of optimal-control theory for laser pulses of two-component polarization. In terms of pulse lengths and target-state occupations, the scheme is shown to be superior to conventional control methods that exploit Rabi oscillations generated by uniform circularly polarized pulses. Current-carrying states in a quantum ring can be used to manipulate a two-level subsystem at the ring center. Combining our results, we propose a realistic approach to construct a laser-driven single-gate qubit that has switching times in the terahertz regime.

Anomalous Coulomb oscillation in crossed carbon nanotubes

NASA Astrophysics Data System (ADS)

Baek, Seung Jae; Lee, Dongsu; Park, Seung Joo; Park, Yung Woo; Svensson, Johannes; Jonson, Mats; Campbell, Eleanor E. B.

2008-03-01

Single-walled carbon nanotube (SWCNT) crossed junctions separated by an insulating layer were fabricated to investigate the double quantum dot modulated by a single gate (DQD-sG). Anomalous Coulomb oscillations were observed on the lower CNT at low temperature, where the behavior was interpreted by the concept of a double quantum dot (DQD) system http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id =APPLAB000089000023233107000001&idtype=cvips&gifs=yes [1]. To understand it more clearly, we have intentionally fabricated crossed CNTs without oxide layer in between. The observed anomalous Coulomb oscillations indicate that the contact resistance between the two tubes becomes a potential barrier splitting the initial single QD into the DQD, and the back-gate modulates the energy levels of the DQD.

Chirp of the single attosecond pulse generated by a polarization gating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang Zenghu

2005-02-01

The chirp of the xuv supercontinuum generated by a polarization gating is investigated by comparing three-dimensional nonadiabatic numerical simulations with classical calculations. The origin of the chirp is the dependence of the energy gain by an electron on the return time. The chirp is positive and its value is almost the same as that when a linearly polarized laser is used. Although the 250-eV-wide supercontinuum corresponds to a single attosecond pulse, the shortest duration of the pulse is limited by the chirp. By compensating the positive chirp with the negative group velocity dispersion of a Sn filter, it is predictedmore » that a single 58-as pulse can be generated.« less

Rectification of Acetylcholine-Elicited Currents in PC12 Pheochromocytoma Cells

NASA Astrophysics Data System (ADS)

Ifune, C. K.; Steinbach, J. H.

1990-06-01

The current-voltage (I-V) relationship for acetylcholine-elicited currents in the rat pheochromocytoma cell line PC12 is nonlinear. Two voltage-dependent processes that could account for the whole-cell current rectification were examined, receptor channel gating and single receptor channel permeation. We found that both factors are involved in the rectification of the whole-cell currents. The voltage dependence of channel gating determines the shape of the I-V curve at negative potentials. The single-channel I-V relationship is inwardly rectifying and largely responsible for the characteristic shape of the whole-cell I-V curve at positive potentials. The rectification of the single-channel currents is produced by the voltage-dependent block of outward currents by intracellular Mg2+ ions.

Separation and counting of single molecules through nanofluidics, programmable electrophoresis, and nanoelectrode-gated tunneling and dielectric detection

DOEpatents

Lee, James W.; Thundat, Thomas G.

2006-04-25

An apparatus for carrying out the separation, detection, and/or counting of single molecules at nanometer scale. Molecular separation is achieved by driving single molecules through a microfluidic or nanofluidic medium using programmable and coordinated electric fields. In various embodiments, the fluidic medium is a strip of hydrophilic material on nonconductive hydrophobic surface, a trough produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base, or a covered passageway produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base together with a nonconductive cover on the parallel strips of hydrophobic nonconductive material. The molecules are detected and counted using nanoelectrode-gated electron tunneling methods, dielectric monitoring, and other methods.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NASA Astrophysics Data System (ADS)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-01

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

PubMed

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-15

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Radiation effects in reconfigurable FPGAs

NASA Astrophysics Data System (ADS)

Quinn, Heather

2017-04-01

Field-programmable gate arrays (FPGAs) are co-processing hardware used in image and signal processing. FPGA are programmed with custom implementations of an algorithm. These algorithms are highly parallel hardware designs that are faster than software implementations. This flexibility and speed has made FPGAs attractive for many space programs that need in situ, high-speed signal processing for data categorization and data compression. Most commercial FPGAs are affected by the space radiation environment, though. Problems with TID has restricted the use of flash-based FPGAs. Static random access memory based FPGAs must be mitigated to suppress errors from single-event upsets. This paper provides a review of radiation effects issues in reconfigurable FPGAs and discusses methods for mitigating these problems. With careful design it is possible to use these components effectively and resiliently.

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

DOE PAGES

Citterio, M.; Camplani, A.; Cannon, M.; ...

2015-11-19

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

NASA Technical Reports Server (NTRS)

1983-01-01

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Reduction in maximum time uncertainty of paired time signals

DOEpatents

Theodosiou, G.E.; Dawson, J.W.

1981-02-11

Reduction in the maximum time uncertainty (t/sub max/ - t/sub min/) of a series of paired time signals t/sub 1/ and t/sub 2/ varying between two input terminals and representative of a series of single events where t/sub 1/ less than or equal to t/sub 2/ and t/sub 1/ + t/sub 2/ equals a constant, is carried out with a circuit utilizing a combination of OR and AND gates as signal selecting means and one or more time delays to increase the minimum value (t/sub min/) of the first signal t/sub 1/ closer to t/sub max/ and thereby reduce the difference. The circuit may utilize a plurality of stages to reduce the uncertainty by factors of 20 to 800.

Error-Rate Estimation Based on Multi-Signal Flow Graph Model and Accelerated Radiation Tests

PubMed Central

Wang, Yueke; Xing, Kefei; Deng, Wei; Zhang, Zelong

2016-01-01

A method of evaluating the single-event effect soft-error vulnerability of space instruments before launched has been an active research topic in recent years. In this paper, a multi-signal flow graph model is introduced to analyze the fault diagnosis and meantime to failure (MTTF) for space instruments. A model for the system functional error rate (SFER) is proposed. In addition, an experimental method and accelerated radiation testing system for a signal processing platform based on the field programmable gate array (FPGA) is presented. Based on experimental results of different ions (O, Si, Cl, Ti) under the HI-13 Tandem Accelerator, the SFER of the signal processing platform is approximately 10−3(error/particle/cm2), while the MTTF is approximately 110.7 h. PMID:27583533

Error-Rate Estimation Based on Multi-Signal Flow Graph Model and Accelerated Radiation Tests.

PubMed

He, Wei; Wang, Yueke; Xing, Kefei; Deng, Wei; Zhang, Zelong

2016-01-01

A method of evaluating the single-event effect soft-error vulnerability of space instruments before launched has been an active research topic in recent years. In this paper, a multi-signal flow graph model is introduced to analyze the fault diagnosis and meantime to failure (MTTF) for space instruments. A model for the system functional error rate (SFER) is proposed. In addition, an experimental method and accelerated radiation testing system for a signal processing platform based on the field programmable gate array (FPGA) is presented. Based on experimental results of different ions (O, Si, Cl, Ti) under the HI-13 Tandem Accelerator, the SFER of the signal processing platform is approximately 10-3(error/particle/cm2), while the MTTF is approximately 110.7 h.

Double optical gating

NASA Astrophysics Data System (ADS)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Experimental limits on the fidelity of adiabatic geometric phase gates in a single solid-state spin qubit

DOE PAGES

Zhang, Kai; Nusran, N. M.; Slezak, B. R.; ...

2016-05-17

While it is often thought that the geometric phase is less sensitive to fluctuations in the control fields, a very general feature of adiabatic Hamiltonians is the unavoidable dynamic phase that accompanies the geometric phase. The effect of control field noise during adiabatic geometric quantum gate operations has not been probed experimentally, especially in the canonical spin qubit system that is of interest for quantum information. We present measurement of the Berry phase and carry out adiabatic geometric phase gate in a single solid-state spin qubit associated with the nitrogen-vacancy center in diamond. We manipulate the spin qubit geometrically bymore » careful application of microwave radiation that creates an effective rotating magnetic field, and observe the resulting Berry phase signal via spin echo interferometry. Our results show that control field noise at frequencies higher than the spin echo clock frequency causes decay of the quantum phase, and degrades the fidelity of the geometric phase gate to the classical threshold after a few (~10) operations. This occurs in spite of the geometric nature of the state preparation, due to unavoidable dynamic contributions. In conclusion, we have carried out systematic analysis and numerical simulations to study the effects of the control field noise and imperfect driving waveforms on the quantum phase gate.« less

Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

DOE PAGES

Witzel, Wayne; Montano, Ines; Muller, Richard P.; ...

2015-08-19

In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.« less

Experimental limits on the fidelity of adiabatic geometric phase gates in a single solid-state spin qubit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Kai; Nusran, N. M.; Slezak, B. R.

While it is often thought that the geometric phase is less sensitive to fluctuations in the control fields, a very general feature of adiabatic Hamiltonians is the unavoidable dynamic phase that accompanies the geometric phase. The effect of control field noise during adiabatic geometric quantum gate operations has not been probed experimentally, especially in the canonical spin qubit system that is of interest for quantum information. We present measurement of the Berry phase and carry out adiabatic geometric phase gate in a single solid-state spin qubit associated with the nitrogen-vacancy center in diamond. We manipulate the spin qubit geometrically bymore » careful application of microwave radiation that creates an effective rotating magnetic field, and observe the resulting Berry phase signal via spin echo interferometry. Our results show that control field noise at frequencies higher than the spin echo clock frequency causes decay of the quantum phase, and degrades the fidelity of the geometric phase gate to the classical threshold after a few (~10) operations. This occurs in spite of the geometric nature of the state preparation, due to unavoidable dynamic contributions. In conclusion, we have carried out systematic analysis and numerical simulations to study the effects of the control field noise and imperfect driving waveforms on the quantum phase gate.« less

A Rout to Protect Quantum Gates constructed via quantum walks from Noises.

PubMed

Du, Yi-Mu; Lu, Li-Hua; Li, You-Quan

2018-05-08

The continuous-time quantum walk on a one-dimensional graph of odd number of sites with an on-site potential at the center is studied. We show that such a quantum-walk system can construct an X-gate of a single qubit as well as a control gate for two qubits, when the potential is much larger than the hopping strength. We investigate the decoherence effect and find that the coherence time can be enhanced by either increasing the number of sites on the graph or the ratio of the potential to the hopping strength, which is expected to motivate the design of the quantum gate with long coherence time. We also suggest several experimental proposals to realize such a system.

Amplifying genetic logic gates.

PubMed

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

Gatemon Benchmarking and Two-Qubit Operation

NASA Astrophysics Data System (ADS)

Casparis, Lucas; Larsen, Thorvald; Olsen, Michael; Petersson, Karl; Kuemmeth, Ferdinand; Krogstrup, Peter; Nygard, Jesper; Marcus, Charles

Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability singular to semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors of ~0.5 % for all gates, including voltage-controlled Z rotations. We show coherent capacitive coupling between two gatemons and coherent SWAP operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of ~91 %, demonstrating the potential of gatemon qubits for building scalable quantum processors. We acknowledge financial support from Microsoft Project Q and the Danish National Research Foundation.

Scalable uniform construction of highly conditional quantum gates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, Svetoslav S.; Vitanov, Nikolay V.

2011-08-15

We present a scalable uniform technique for the construction of highly conditional multiply-controlled-not quantum gates of trapped ion qubits, such as the Toffoli gate, without using ancilla states and circuits of an exorbitant number of concatenated one- and two-qubit gates. Apart from the initial dressing of the internal qubit states with vibrational phonons and the final restoration of the phonon ground state, our technique requires the application of just a single composite pulse on the target qubit and is applicable both in and outside the Lamb-Dicke regime. We design special narrowband composite pulses, which suppress all transitions but the conditionalmore » transition of the target qubit; moreover, these composite pulses significantly improve the spatial addressing selectivity.« less

Low-Power and High-Speed Technique for logic Gates in 20nm Double-Gate FinFET Technology

NASA Astrophysics Data System (ADS)

Priydarshi, A.; Chattopadhyay, M. K.

2016-10-01

The FinFET is the leading example of multigate MOSFETS to substitute conventional single gate MOSFETs for ultimate scaling [1], The FinFET structure is a combination of a thin channel region and a double gate to suppress the short channel effects (SCEs) and Vthvariation [2], By using FinFET,figure of merits viz, ION, IOFF, output resistance, propagation delay, noise margin and leakage power, can be improved for ultra low power and high performance applications[3]. In this paper, a new high speed low power dynamic circuit design technique has been proposed using 20nm FinFETs. By applying the appropriate clock and sleep signal to the back gates of the FinFETs, the proposed circuit can efficiently control the dynamic power, During the pre-charging period, Vth of PMOS is controlled low so that a fast precharging can occur;

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

PubMed

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

NASA Astrophysics Data System (ADS)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

NASA Astrophysics Data System (ADS)

Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

2018-04-01

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

Multi-valued logic gates based on ballistic transport in quantum point contacts.

PubMed

Seo, M; Hong, C; Lee, S-Y; Choi, H K; Kim, N; Chung, Y; Umansky, V; Mahalu, D

2014-01-22

Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

Cloning of Plasmodium falciparum by single-cell sorting.

PubMed

Miao, Jun; Li, Xiaolian; Cui, Liwang

2010-10-01

Malaria parasite cloning is traditionally carried out mainly by using the limiting dilution method, which is laborious, imprecise, and unable to distinguish multiply-infected RBCs. In this study, we used a parasite engineered to express green fluorescent protein (GFP) to evaluate a single-cell sorting method for rapidly cloning Plasmodium falciparum. By dividing a two-dimensional scattergram from a cell sorter into 17 gates, we determined the parameters for isolating singly-infected erythrocytes and sorted them into individual cultures. Pre-gating of the engineered parasites for GFP allowed the isolation of almost 100% GFP-positive clones. Compared with the limiting dilution method, the number of parasite clones obtained by single-cell sorting was much higher. Molecular analyses showed that parasite isolates obtained by single-cell sorting were highly homogenous. This highly efficient single-cell sorting method should prove very useful for cloning both P. falciparum laboratory populations from genetic manipulation experiments and clinical samples. Copyright 2010 Elsevier Inc. All rights reserved.

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klymenko, M. V.; Klein, M.; Levine, R. D.

2016-07-14

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states correspondsmore » to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.« less

Management of a Complex Open Channel Network During Flood Events

NASA Astrophysics Data System (ADS)

Franchini, M.; Valiani, A.; Schippa, L.; Mascellani, G.

2003-04-01

Most part of the area around Ferrara (Italy) is below the mean sea level and an extensive drainage system combined with several pump stations allows the use of this area for both urban development and industrial and agricultural activities. The three main channels of this hydraulic system constitute the Ferrara Inland Waterway (total length approximately 70 km), which connects the Po river near Ferrara to the sea. Because of the level difference between the upstream and dowstream ends of the waterway, three locks are located along it, each of them combined with a set of gates to control the water levels. During rainfall events, most of the water of the basin flows into the waterway and heavy precipitations sometimes cause flooding in several areas. This is due to the insufficiency of the channel network dimensions and an inadequate manual operation of the gates. This study presents a hydrological-hydraulic model for the entire Ferrara basin and a system of rules in order to operate the gates. In particular, their opening is designed to be regulated in real time by monitoring the water level in several sections along the channels. Besides flood peak attenuation, this operation strategy contributes also to the maintenance of a constant water level for irrigation and fluvial navigation during the dry periods. With reference to the flood event of May 1996, it is shown that this floodgate operation policy, unlike that which was actually adopted during that event, would lead to a significant flood peak attenuation, avoiding flooding in the area upstream of Ferrara.

Ultrafast coherent excitation of a trapped ion qubit for fast gates and photon frequency qubits.

PubMed

Madsen, M J; Moehring, D L; Maunz, P; Kohn, R N; Duan, L-M; Monroe, C

2006-07-28

We demonstrate ultrafast coherent excitation of an atomic qubit stored in the hyperfine levels of a single trapped cadmium ion. Such ultrafast excitation is crucial for entangling networks of remotely located trapped ions through the interference of photon frequency qubits, and is also a key component for realizing ultrafast quantum gates between Coulomb-coupled ions.

Towards optimizing two-qubit operations in three-electron double quantum dots

NASA Astrophysics Data System (ADS)

Frees, Adam; Gamble, John King; Mehl, Sebastian; Friesen, Mark; Coppersmith, S. N.

The successful implementation of single-qubit gates in the quantum dot hybrid qubit motivates our interest in developing a high fidelity two-qubit gate protocol. Recently, extensive work has been done to characterize the theoretical limitations and advantages in performing two-qubit operations at an operation point located in the charge transition region. Additionally, there is evidence to support that single-qubit gate fidelities improve while operating in the so-called ``far-detuned'' region, away from the charge transition. Here we explore the possibility of performing two-qubit gates in this region, considering the challenges and the benefits that may present themselves while implementing such an operational paradigm. This work was supported in part by ARO (W911NF-12-0607) (W911NF-12-R-0012), NSF (PHY-1104660), ONR (N00014-15-1-0029). The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

Universal non-adiabatic geometric manipulation of pseudo-spin charge qubits

NASA Astrophysics Data System (ADS)

Azimi Mousolou, Vahid

2017-01-01

Reliable quantum information processing requires high-fidelity universal manipulation of quantum systems within the characteristic coherence times. Non-adiabatic holonomic quantum computation offers a promising approach to implement fast, universal, and robust quantum logic gates particularly useful in nano-fabricated solid-state architectures, which typically have short coherence times. Here, we propose an experimentally feasible scheme to realize high-speed universal geometric quantum gates in nano-engineered pseudo-spin charge qubits. We use a system of three coupled quantum dots containing a single electron, where two computational states of a double quantum dot charge qubit interact through an intermediate quantum dot. The additional degree of freedom introduced into the qubit makes it possible to create a geometric model system, which allows robust and efficient single-qubit rotations through careful control of the inter-dot tunneling parameters. We demonstrate that a capacitive coupling between two charge qubits permits a family of non-adiabatic holonomic controlled two-qubit entangling gates, and thus provides a promising procedure to maintain entanglement in charge qubits and a pathway toward fault-tolerant universal quantum computation. We estimate the feasibility of the proposed structure by analyzing the gate fidelities to some extent.

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

NASA Astrophysics Data System (ADS)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; Lagally, Max G.; Foote, Ryan H.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.

2016-10-01

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau-Zener-Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

Highly flexible SRAM cells based on novel tri-independent-gate FinFET

NASA Astrophysics Data System (ADS)

Liu, Chengsheng; Zheng, Fanglin; Sun, Yabin; Li, Xiaojin; Shi, Yanling

2017-10-01

In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read stability and speed. Both cells can offer multi read operations for frequency requirement with single voltage supply. In the first TIG FinFET SRAM cell, the strength of single-fin access transistor (TIG FinFET) can be flexibly adjusted by selecting five different modes to meet the needs of dynamic frequency design. Compared to the previous double-independent-gate (DIG) FinFET SRAM cell, 12.16% shorter read delay can be achieved with only 1.62% read stability decrement. As for the second TIG FinFET SRAM cell, pass-gate feedback technology is applied and double-fin TIG FinFETs are used as access transistors to solve the severe write-ability degradation. Three modes exist to flexibly adjust read speed and stability, and 68.2% larger write margin and 51.7% shorter write delay are achieved at only the expense of 26.2% increase in leakage power, with the same layout area as conventional FinFET SRAM cell.

Implementation of ternary Shor’s algorithm based on vibrational states of an ion in anharmonic potential

NASA Astrophysics Data System (ADS)

Liu, Wei; Chen, Shu-Ming; Zhang, Jian; Wu, Chun-Wang; Wu, Wei; Chen, Ping-Xing

2015-03-01

It is widely believed that Shor’s factoring algorithm provides a driving force to boost the quantum computing research. However, a serious obstacle to its binary implementation is the large number of quantum gates. Non-binary quantum computing is an efficient way to reduce the required number of elemental gates. Here, we propose optimization schemes for Shor’s algorithm implementation and take a ternary version for factorizing 21 as an example. The optimized factorization is achieved by a two-qutrit quantum circuit, which consists of only two single qutrit gates and one ternary controlled-NOT gate. This two-qutrit quantum circuit is then encoded into the nine lower vibrational states of an ion trapped in a weakly anharmonic potential. Optimal control theory (OCT) is employed to derive the manipulation electric field for transferring the encoded states. The ternary Shor’s algorithm can be implemented in one single step. Numerical simulation results show that the accuracy of the state transformations is about 0.9919. Project supported by the National Natural Science Foundation of China (Grant No. 61205108) and the High Performance Computing (HPC) Foundation of National University of Defense Technology, China.

Crystal structure of a two-subunit TrkA octameric gating ring assembly

DOE PAGES

Deller, Marc C.; Johnson, Hope A.; Miller, Mitchell D.; ...

2015-03-31

The TM1088 locus of T. maritima codes for two proteins designated TM1088A and TM1088B, which combine to form the cytosolic portion of a putative Trk K⁺ transporter. We report the crystal structure of this assembly to a resolution of 3.45 Å. The high resolution crystal structures of the components of the assembly, TM1088A and TM1088B, were also determined independently to 1.50 Å and 1.55 Å, respectively. The TM1088 proteins are structurally homologous to each other and to other K⁺ transporter proteins, such as TrkA. These proteins form a cytosolic gating ring assembly that controls the flow of K⁺ ions acrossmore » the membrane. TM1088 represents the first structure of a two-subunit Trk assembly. Despite the atypical genetics and chain organization of the TM1088 assembly, it shares significant structural homology and an overall quaternary organization with other single-subunit K⁺ gating ring assemblies. This structure provides the first structural insights into what may be an evolutionary ancestor of more modern single-subunit K⁺ gating ring assemblies.« less

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE PAGES

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; ...

2016-10-18

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

NASA Astrophysics Data System (ADS)

Feng, Liqiang; Liu, Katheryn

2018-05-01

An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

The effect of split gate dimensions on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure

NASA Astrophysics Data System (ADS)

Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

We use a multiplexing scheme to measure the conductance properties of 95 split gates of 7 different gate dimensions fabricated on a GaAs/AlGaAs chip, in a single cool down. The number of devices for which conductance is accurately quantized reduces as the gate length increases. However, even the devices for which conductance is accurately quantized in units of 2e2 / h show no correlation between the length of electrostatic potential barrier in the channel and the gate length, using a saddle point model to estimate the barrier length. Further, the strength of coupling between the gates and the 1D channel does not increase with gate length beyond 0.7 μm. The background electrostatic profile appears as significant as the gate dimension in determining device behavior. We find a clear correlation between the curvature of the electrostatic barrier along the channel and the strength of the ``0.7 anomaly'' which identifies the electrostatic length of the channel as the principal factor governing the conductance of the 0.7 anomaly. Present address: Wisconsin Institute for Quantum Information, University of Wisconsin-Madison, Madison, WI.

Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

NASA Astrophysics Data System (ADS)

Chen, Meng; Lei, Jiefeng; Huang, Shengxiang; Liao, Congwei; Deng, Lianwen

2017-06-01

A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive {V}{TH} shift within 0.4 V and negative {V}{TH} shift within -1.2 V and it is robust and promising for high-resolution display. Project supported by the Science and Technology Project of Hunan Province, China (No. 2015JC3401)

Comparison Of Intake Gate Closure Methods At Lower Granite, Little Goose, Lower Monumental, And Mcnary Dams Using Risk-Based Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gore, Bryan F.; Blackburn, Tyrone R.; Heasler, Patrick G.

2001-01-19

The objective of this report is to compare the benefits and costs of modifications proposed for intake gate closure systems at four hydroelectric stations on the Lower Snake and Upper Columbia Rivers in the Walla Walla District that are unable to meet the COE 10-minute closure rule due to the installation of fish screens. The primary benefit of the proposed modifications is to reduce the risk of damage to the station and environs when emergency intake gate closure is required. Consequently, this report presents the results and methodology of an extensive risk analysis performed to assess the reliability of powerhousemore » systems and the costs and timing of potential damages resulting from events requiring emergency intake gate closure. As part of this analysis, the level of protection provided by the nitrogen emergency closure system was also evaluated. The nitrogen system was the basis for the original recommendation to partially disable the intake gate systems. The risk analysis quantifies this protection level.« less

Proposal for quantum gates in permanently coupled antiferromagnetic spin rings without need of local fields.

PubMed

Troiani, Filippo; Affronte, Marco; Carretta, Stefano; Santini, Paolo; Amoretti, Giuseppe

2005-05-20

We propose a scheme for the implementation of quantum gates which is based on the qubit encoding in antiferromagnetic molecular rings. We show that a proper engineering of the intercluster link would result in an effective coupling that vanishes as far as the system is kept in the computational space, while it is turned on by a selective excitation of specific auxiliary states. These are also shown to allow the performing of single-qubit and two-qubit gates without an individual addressing of the rings by means of local magnetic fields.

The mathematics of a quantum Hamiltonian computing half adder Boolean logic gate.

PubMed

Dridi, G; Julien, R; Hliwa, M; Joachim, C

2015-08-28

The mathematics behind the quantum Hamiltonian computing (QHC) approach of designing Boolean logic gates with a quantum system are given. Using the quantum eigenvalue repulsion effect, the QHC AND, NAND, OR, NOR, XOR, and NXOR Hamiltonian Boolean matrices are constructed. This is applied to the construction of a QHC half adder Hamiltonian matrix requiring only six quantum states to fullfil a half Boolean logical truth table. The QHC design rules open a nano-architectronic way of constructing Boolean logic gates inside a single molecule or atom by atom at the surface of a passivated semi-conductor.

Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

PubMed

Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

2014-02-07

Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Low-latency optical parallel adder based on a binary decision diagram with wavelength division multiplexing scheme

NASA Astrophysics Data System (ADS)

Shinya, A.; Ishihara, T.; Inoue, K.; Nozaki, K.; Kita, S.; Notomi, M.

2018-02-01

We propose an optical parallel adder based on a binary decision diagram that can calculate simply by propagating light through electrically controlled optical pass gates. The CARRY and CARRY operations are multiplexed in one circuit by a wavelength division multiplexing scheme to reduce the number of optical elements, and only a single gate constitutes the critical path for one digit calculation. The processing time reaches picoseconds per digit when we use a 100-μm-long optical path gates, which is ten times faster than a CMOS circuit.

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

PubMed

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Probing the cooperativity of Thermoplasma acidophilum proteasome core particle gating by NMR spectroscopy

PubMed Central

Huang, Rui; Pérez, Felipe; Kay, Lewis E.

2017-01-01

The 20S proteasome core particle (20S CP) plays an integral role in cellular homeostasis by degrading proteins no longer required for function. The process is, in part, controlled via gating residues localized to the ends of the heptameric barrel-like CP structure that occlude substrate entry pores, preventing unregulated degradation of substrates that might otherwise enter the proteasome. Previously, we showed that the N-terminal residues of the α-subunits of the CP from the archaeon Thermoplasma acidophilum are arranged such that, on average, two of the seven termini are localized inside the lumen of the proteasome, thereby plugging the entry pore and functioning as a gate. However, the mechanism of gating remains unclear. Using solution NMR and a labeling procedure in which a series of mixed proteasome rings are prepared such that the percentage of gate-containing subunits is varied, we address the energetics of gating and establish whether gating is a cooperative process involving the concerted action of residues from more than a single protomer. Our results establish that the intrinsic probability of a gate entering the lumen favors the in state by close to 20-fold, that entry of each gate is noncooperative, with the number of gates that can be accommodated inside the lumen a function of the substrate entry pore size and the bulkiness of the gating residues. Insight into the origin of the high affinity for the in state is obtained from spin-relaxation experiments. More generally, our approach provides an avenue for dissecting interactions of individual protomers in homo-oligomeric complexes. PMID:29087330

An atypical CNG channel activated by a single cGMP molecule controls sperm chemotaxis.

PubMed

Bönigk, Wolfgang; Loogen, Astrid; Seifert, Reinhard; Kashikar, Nachiket; Klemm, Clementine; Krause, Eberhard; Hagen, Volker; Kremmer, Elisabeth; Strünker, Timo; Kaupp, U Benjamin

2009-10-27

Sperm of the sea urchin Arbacia punctulata can respond to a single molecule of chemoattractant released by an egg. The mechanism underlying this extreme sensitivity is unknown. Crucial signaling events in the response of A. punctulata sperm to chemoattractant include the rapid synthesis of the intracellular messenger guanosine 3',5'-monophosphate (cGMP) and the ensuing membrane hyperpolarization that results from the opening of potassium-selective cyclic nucleotide-gated (CNGK) channels. Here, we use calibrated photolysis of caged cGMP to show that approximately 45 cGMP molecules are generated during the response to a single molecule of chemoattractant. The CNGK channel can respond to such small cGMP changes because it is exquisitely sensitive to cGMP and activated in a noncooperative fashion. Like voltage-activated Ca(v) and Na(v) channels, the CNGK polypeptide consists of four homologous repeat sequences. Disabling each of the four cyclic nucleotide-binding sites through mutagenesis revealed that binding of a single cGMP molecule to repeat 3 is necessary and sufficient to activate the CNGK channel. Thus, CNGK has developed a mechanism of activation that is different from the activation of other CNG channels, which requires the cooperative binding of several ligands and operates in the micromolar rather than the nanomolar range.

NASA Univision Hispanic Education Campaign

NASA Image and Video Library

2010-02-23

NASA Administrator Charles Bolden, left, speaks with Melinda French Gates, of the Bill & Melinda Gates Foundation, right, prior to the start of an event at the National Press Club in Washington, Tuesday, Feb. 23, 2010. NASA is working with Univision Communications Inc. to develop a partnership in support of the Spanish-language media outlet's initiative to improve high school graduation rates, prepare Hispanic students for college, and encourage them to pursue careers in science, technology, engineering and mathematics, or STEM, disciplines. Photo Credit: (NASA/Bill Ingalls)

Interconnect-free parallel logic circuits in a single mechanical resonator

PubMed Central

Mahboob, I.; Flurin, E.; Nishiguchi, K.; Fujiwara, A.; Yamaguchi, H.

2011-01-01

In conventional computers, wiring between transistors is required to enable the execution of Boolean logic functions. This has resulted in processors in which billions of transistors are physically interconnected, which limits integration densities, gives rise to huge power consumption and restricts processing speeds. A method to eliminate wiring amongst transistors by condensing Boolean logic into a single active element is thus highly desirable. Here, we demonstrate a novel logic architecture using only a single electromechanical parametric resonator into which multiple channels of binary information are encoded as mechanical oscillations at different frequencies. The parametric resonator can mix these channels, resulting in new mechanical oscillation states that enable the construction of AND, OR and XOR logic gates as well as multibit logic circuits. Moreover, the mechanical logic gates and circuits can be executed simultaneously, giving rise to the prospect of a parallel logic processor in just a single mechanical resonator. PMID:21326230

Interconnect-free parallel logic circuits in a single mechanical resonator.

PubMed

Mahboob, I; Flurin, E; Nishiguchi, K; Fujiwara, A; Yamaguchi, H

2011-02-15

In conventional computers, wiring between transistors is required to enable the execution of Boolean logic functions. This has resulted in processors in which billions of transistors are physically interconnected, which limits integration densities, gives rise to huge power consumption and restricts processing speeds. A method to eliminate wiring amongst transistors by condensing Boolean logic into a single active element is thus highly desirable. Here, we demonstrate a novel logic architecture using only a single electromechanical parametric resonator into which multiple channels of binary information are encoded as mechanical oscillations at different frequencies. The parametric resonator can mix these channels, resulting in new mechanical oscillation states that enable the construction of AND, OR and XOR logic gates as well as multibit logic circuits. Moreover, the mechanical logic gates and circuits can be executed simultaneously, giving rise to the prospect of a parallel logic processor in just a single mechanical resonator.

Electrical level of defects in single-layer two-dimensional TiO2

NASA Astrophysics Data System (ADS)

Song, X. F.; Hu, L. F.; Li, D. H.; Chen, L.; Sun, Q. Q.; Zhou, P.; Zhang, D. W.

2015-11-01

The remarkable properties of graphene and transition metal dichalcogenides (TMDCs) have attracted increasing attention on two-dimensional materials, but the gate oxide, one of the key components of two-dimensional electronic devices, has rarely reported. We found the single-layer oxide can be used as the two dimensional gate oxide in 2D electronic structure, such as TiO2. However, the electrical performance is seriously influenced by the defects existing in the single-layer oxide. In this paper, a nondestructive and noncontact solution based on spectroscopic ellipsometry has been used to detect the defect states and energy level of single-layer TiO2 films. By fitting the Lorentz oscillator model, the results indicate the exact position of defect energy levels depends on the estimated band gap and the charge state of the point defects of TiO2.

Deterministic Multi-hop Controlled Teleportation of Arbitrary Single-Qubit State

NASA Astrophysics Data System (ADS)

Peng, Jia-yin; Bai, Ming-qiang; Mo, Zhi-wen

2017-10-01

Multi-hop teleportation is of great significance due to long-distance delivery of quantum information and wireless quantum communication networks. In existing protocols of multi-hop teleportation, the more nodes, the smaller the success probability. In this paper, fusing the ideas of multi-hop teleportation and controlled teleportation, we put forward a scheme for implementing multi-hop controlled teleportation of single-qubit state. A set of ingenious three-qubit non-maximally entangled states are constructed to serve as the quantum channels. The information is perfectly transmitted hop by hop through teleportation under the control of the supervisors. Unit success probability can be achieved independent of channel's entanglement degree and the number of intermediate nodes. Only Pauli operations, single-qubit rotation, Hadamard gate, controlled-NOT gate, Bell-state measurement and single-qubit measurement are used in our scheme, so this scheme is easily realized in physical experiment.

Single-Shot Quantum Nondemolition Detection of Individual Itinerant Microwave Photons

NASA Astrophysics Data System (ADS)

Besse, Jean-Claude; Gasparinetti, Simone; Collodo, Michele C.; Walter, Theo; Kurpiers, Philipp; Pechal, Marek; Eichler, Christopher; Wallraff, Andreas

2018-04-01

Single-photon detection is an essential component in many experiments in quantum optics, but it remains challenging in the microwave domain. We realize a quantum nondemolition detector for propagating microwave photons and characterize its performance using a single-photon source. To this aim, we implement a cavity-assisted conditional phase gate between the incoming photon and a superconducting artificial atom. By reading out the state of this atom in a single shot, we reach an external (internal) photon-detection fidelity of 50% (71%), limited by transmission efficiency between the source and the detector (75%) and the coherence properties of the qubit. By characterizing the coherence and average number of photons in the field reflected off the detector, we demonstrate its quantum nondemolition nature. We envisage applications in generating heralded remote entanglement between qubits and for realizing logic gates between propagating microwave photons.

Technical Note: Evaluation of the latency and the beam characteristics of a respiratory gating system using an Elekta linear accelerator and a respiratory indicator device, Abches.

PubMed

Saito, Masahide; Sano, Naoki; Ueda, Koji; Shibata, Yuki; Kuriyama, Kengo; Komiyama, Takafumi; Marino, Kan; Aoki, Shinichi; Onishi, Hiroshi

2018-01-01

To evaluate the basic performance of a respiratory gating system using an Elekta linac and an Abches respiratory-monitoring device. The gating system was comprised of an Elekta Synergy linac equipped with a Response TM gating interface module and an Abches respiratory-monitoring device. The latencies from a reference respiratory signal to the resulting Abches gating output signal and the resulting monitor-ion-chamber output signal were measured. Then, the flatness and symmetry of the gated beams were measured using a two-dimensional ionization chamber array for fixed and arc beams, respectively. Furthermore, the beam quality, TPR 20,10 , and the output of the fixed gated beams were also measured using a Farmer chamber. Each of the beam characteristics was compared with each of those for nongated irradiation. The full latencies at beam-on and beam-off for 6-MV gated beams were 336.4 ± 23.4 ms and 87.6 ± 7.1 ms, respectively. The differences in flatness between the gated and nongated beams were within 0.91% and 0.87% for the gun-target and left-right directions, respectively. In the same manner, the beam symmetries were within 0.68% and 0.82%, respectively. The percentage differences in beam quality and beam output were below 1% for a beam-on time range of 1.1-7 s. The latency of the Elekta gating system combined with Abches was found to be acceptable using our measurement method. Furthermore, we demonstrated that the beam characteristics of the gating system using our respiratory indicator were comparable with the nongated beams for a single-arc gated beam delivery. © 2017 American Association of Physicists in Medicine.

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Steven; Gates, Bill; Podesta, John

2012-02-28

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called Fireside Chat that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas aboutmore » how small businesses and innovators can overcome the challenges that face many startups.« less

Glutamate receptor-channel gating. Maximum likelihood analysis of gigaohm seal recordings from locust muscle.

PubMed Central

Bates, S E; Sansom, M S; Ball, F G; Ramsey, R L; Usherwood, P N

1990-01-01

Gigaohm recordings have been made from glutamate receptor channels in excised, outside-out patches of collagenase-treated locust muscle membrane. The channels in the excised patches exhibit the kinetic state switching first seen in megaohm recordings from intact muscle fibers. Analysis of channel dwell time distributions reveals that the gating mechanism contains at least four open states and at least four closed states. Dwell time autocorrelation function analysis shows that there are at least three gateways linking the open states of the channel with the closed states. A maximum likelihood procedure has been used to fit six different gating models to the single channel data. Of these models, a cooperative model yields the best fit, and accurately predicts most features of the observed channel gating kinetics. PMID:1696510

Highly stable thin film transistors using multilayer channel structure

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.; Hedhili, M. N.; Alshareef, H. N.

2015-03-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO{sub 2}) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO{sub 2} layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO{sub 2} layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnOmore » layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.« less

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

PubMed

Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields.

PubMed

Noe, G Timothy; Katayama, Ikufumi; Katsutani, Fumiya; Allred, James J; Horowitz, Jeffrey A; Sullivan, David M; Zhang, Qi; Sekiguchi, Fumiya; Woods, Gary L; Hoffmann, Matthias C; Nojiri, Hiroyuki; Takeda, Jun; Kono, Junichiro

2016-12-26

We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers in the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.

Single gate p-n junctions in graphene-ferroelectric devices

NASA Astrophysics Data System (ADS)

Hinnefeld, J. Henry; Xu, Ruijuan; Rogers, Steven; Pandya, Shishir; Shim, Moonsub; Martin, Lane W.; Mason, Nadya

2016-05-01

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3 substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an "on-demand" p-n junction in graphene controlled by a single, universal backgate.

Practical implementation, characterization and applications of a multi-colour time-gated luminescence microscope.

PubMed

Zhang, Lixin; Zheng, Xianlin; Deng, Wei; Lu, Yiqing; Lechevallier, Severine; Ye, Zhiqiang; Goldys, Ewa M; Dawes, Judith M; Piper, James A; Yuan, Jingli; Verelst, Marc; Jin, Dayong

2014-10-13

Time-gated luminescence microscopy using long-lifetime molecular probes can effectively eliminate autofluorescence to enable high contrast imaging. Here we investigate a new strategy of time-gated imaging for simultaneous visualisation of multiple species of microorganisms stained with long-lived complexes under low-background conditions. This is realized by imaging two pathogenic organisms (Giardia lamblia stained with a red europium probe and Cryptosporidium parvum with a green terbium probe) at UV wavelengths (320-400 nm) through synchronization of a flash lamp with high repetition rate (1 kHz) to a robust time-gating detection unit. This approach provides four times enhancement in signal-to-background ratio over non-time-gated imaging, while the average signal intensity also increases six-fold compared with that under UV LED excitation. The high sensitivity is further confirmed by imaging the single europium-doped Y₂O₂S nanocrystals (150 nm). We report technical details regarding the time-gating detection unit and demonstrate its compatibility with commercial epi-fluorescence microscopes, providing a valuable and convenient addition to standard laboratory equipment.

Practical Implementation, Characterization and Applications of a Multi-Colour Time-Gated Luminescence Microscope

NASA Astrophysics Data System (ADS)

Zhang, Lixin; Zheng, Xianlin; Deng, Wei; Lu, Yiqing; Lechevallier, Severine; Ye, Zhiqiang; Goldys, Ewa M.; Dawes, Judith M.; Piper, James A.; Yuan, Jingli; Verelst, Marc; Jin, Dayong

2014-10-01

Time-gated luminescence microscopy using long-lifetime molecular probes can effectively eliminate autofluorescence to enable high contrast imaging. Here we investigate a new strategy of time-gated imaging for simultaneous visualisation of multiple species of microorganisms stained with long-lived complexes under low-background conditions. This is realized by imaging two pathogenic organisms (Giardia lamblia stained with a red europium probe and Cryptosporidium parvum with a green terbium probe) at UV wavelengths (320-400 nm) through synchronization of a flash lamp with high repetition rate (1 kHz) to a robust time-gating detection unit. This approach provides four times enhancement in signal-to-background ratio over non-time-gated imaging, while the average signal intensity also increases six-fold compared with that under UV LED excitation. The high sensitivity is further confirmed by imaging the single europium-doped Y2O2S nanocrystals (150 nm). We report technical details regarding the time-gating detection unit and demonstrate its compatibility with commercial epi-fluorescence microscopes, providing a valuable and convenient addition to standard laboratory equipment.

Robustness of high-fidelity Rydberg gates with single-site addressability

NASA Astrophysics Data System (ADS)

Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

2014-09-01

Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

Evaluation of PET Imaging Resolution Using 350 mu{m} Pixelated CZT as a VP-PET Insert Detector

NASA Astrophysics Data System (ADS)

Yin, Yongzhi; Chen, Ximeng; Li, Chongzheng; Wu, Heyu; Komarov, Sergey; Guo, Qingzhen; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

2014-02-01

A cadmium-zinc-telluride (CZT) detector with 350 μm pitch pixels was studied in high-resolution positron emission tomography (PET) imaging applications. The PET imaging system was based on coincidence detection between a CZT detector and a lutetium oxyorthosilicate (LSO)-based Inveon PET detector in virtual-pinhole PET geometry. The LSO detector is a 20 ×20 array, with 1.6 mm pitches, and 10 mm thickness. The CZT detector uses ac 20 ×20 ×5 mm substrate, with 350 μm pitch pixelated anodes and a coplanar cathode. A NEMA NU4 Na-22 point source of 250 μm in diameter was imaged by this system. Experiments show that the image resolution of single-pixel photopeak events was 590 μm FWHM while the image resolution of double-pixel photopeak events was 640 μm FWHM. The inclusion of double-pixel full-energy events increased the sensitivity of the imaging system. To validate the imaging experiment, we conducted a Monte Carlo (MC) simulation for the same PET system in Geant4 Application for Emission Tomography. We defined LSO detectors as a scanner ring and 350 μm pixelated CZT detectors as an insert ring. GATE simulated coincidence data were sorted into an insert-scanner sinogram and reconstructed. The image resolution of MC-simulated data (which did not factor in positron range and acolinearity effect) was 460 μm at FWHM for single-pixel events. The image resolutions of experimental data, MC simulated data, and theoretical calculation are all close to 500 μm FWHM when the proposed 350 μm pixelated CZT detector is used as a PET insert. The interpolation algorithm for the charge sharing events was also investigated. The PET image that was reconstructed using the interpolation algorithm shows improved image resolution compared with the image resolution without interpolation algorithm.

Scanning gate microscopy of electronic inhomogeneities in single-walled carbon nanotube (SWCNT) devices

NASA Astrophysics Data System (ADS)

Hunt, Steven R.; Collins, Phillip G.

2010-03-01

The electronic properties of graphitic carbon devices are primarily determined by the contact metal and the carbon band structure. However, inhomogeneities such as substrate imperfections, surface defects, and mobile contaminants also contribute and can lead to transistor-like behaviors. We experimentally investigate this phenomena in the 1-D limit using metallic single-walled carbon nanotubes (SWCNTs) before and after the electrochemical creation of sidewall defects. While scanning gate microscopy readily identifies the defect sites, the energy-dependence of the technique allows quantitative analysis of the defects and discrimination of different defect types. This research is partly supported by the NSF (DMR 08-xxxx).