DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

NASA Astrophysics Data System (ADS)

Jia, Chuanyu; Yu, Tongjun; Mu, Sen; Pan, Yaobo; Yang, Zhijian; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi

2007-05-01

Polarization-resolved edge-emitting electroluminescence of InGaN /GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395to455nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395nm) to 1.9 of blue LEDs (455nm). Based on TE mode dominant emissions in InGaN /GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E ‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN /GaN MQWs from near ultraviolet to blue.

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P.

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of themore » quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.« less

Emission wavelength red-shift by using ;semi-bulk; InGaN buffer layer in InGaN/InGaN multiple-quantum-well

NASA Astrophysics Data System (ADS)

Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2017-12-01

We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is fully strained on the n-GaN template, the MQW structure with the buffer has ∼15% relaxation. This small relaxation along with slight compositional pulling induced well thickness increase of MQW is believed to be the reason for the red-shift of emission wavelength. In addition, the SB InGaN buffer acts as an electron reservoir and also helps to reduce the Quantum Confined Stark Effect (QCSE) and thus increase the emission intensity. In this way, by avoiding fully relaxed buffer induced material degradation, a longer emission wavelength can be achieved by just using InGaN SB buffer while keeping all other growth conditions the same as the reference structure. Thus, a reasonably thick fully strained or very little relaxed InGaN buffer, which is realized by ;semi-bulk; approach to maintain good InGaN material quality, can be beneficial for realizing LEDs, grown on top of this buffer, emitting in the blue to cyan to green regime without using excess indium (In).

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J.; Dawson, P.; Hammersley, S.

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar,more » and is a function, specifically, of carrier density.« less

Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

DOE PAGES

Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

2016-11-04

Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

PubMed

Humphreys, C J; Griffiths, J T; Tang, F; Oehler, F; Findlay, S D; Zheng, C; Etheridge, J; Martin, T L; Bagot, P A J; Moody, M P; Sutherland, D; Dawson, P; Schulz, S; Zhang, S; Fu, W Y; Zhu, T; Kappers, M J; Oliver, R A

2017-05-01

We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding.

PubMed

Shu, G W; Lin, C C; Lin, H T; Lin, T N; Shen, J L; Chiu, C H; Li, Z Y; Kuo, H C; Lin, C C; Wang, S C; Lin, C A J; Chang, W H

2011-03-14

We present the first observation of resonance energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding. Steady-state and time-resolved photoluminescence measurements provide conclusive evidence of resonance energy transfer and obtain an optimum transfer efficiency of ~72%. A set of rate equations is successfully used to model the kinetics of resonance energy transfer.

(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, J., E-mail: j.bai@sheffield.ac.uk; Xu, B.; Guzman, F. G.

2015-12-28

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linearmore » increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.« less

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

DOE PAGES

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; ...

2015-11-18

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Impact of Alloy Fluctuations on Radiative and Auger Recombination in InGaN Quantum Wells

NASA Astrophysics Data System (ADS)

Jones, Christina; Teng, Chu-Hsiang; Yan, Qimin; Ku, Pei-Cheng; Kioupakis, Emmanouil

Light-emitting diodes (LEDs) based on indium gallium nitride (InGaN) are important for efficient solid-state lighting (2014 Nobel Prize in Physics). Despite its many successes, InGaN suffers from issues that reduce the efficiency of devices at high power, such as the green gap and efficiency droop. The origin of the droop has been attributed to Auger recombination, mediated by carrier scattering due to phonons and alloy disorder. Additionally, InGaN exhibits atomic-scale composition fluctuations that localize carriers and may affect the efficiency. In this work, we study the effect of local composition fluctuations on the radiative recombination rate, Auger recombination rate, and efficiency of InGaN/GaN quantum wells. We apply k.p calculations to simulate band edges and wave functions of quantum wells with fluctuating alloy distributions based on atom probe tomography data, and we evaluate double and triple overlaps of electron and hole wave functions. We compare results for quantum wells with fluctuating alloy distributions to those with uniform alloy compositions and to published work. Our results demonstrate that alloy-composition fluctuations aggravate the efficiency-droop and green-gap problems and further reduce LED efficiency at high power. We acknowledge the NSF CAREER award DMR-1254314, the NSF Graduate Research Fellowship Program DGE-1256260, and the DOE NERSC facility (DE-AC02-05CH11231).

Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.

PubMed

Park, Seoung-Hwan; Mishra, Dhaneshwar; Eugene Pak, Y; Kang, K; Park, Chang Yong; Yoo, Seung-Hyun; Cho, Yong-Hee; Shim, Mun-Bo; Kim, Sungjin

2014-06-16

Partial strain relaxation effects on polarization ratio of semipolar (112̄2) InxGa1−xN/GaN quantum well (QW) structures grown on relaxed InGaN buffers were investigated using the multiband effective-mass theory. The absolute value of the polarization ratio gradually decreases with increasing In composition in InGaN buffer layer when the strain relaxation ratio (ε0y′y′−εy′y′)/ε0y′y′ along y′-axis is assumed to be linearly proportional to the difference of lattice constants between the well and the buffer layer. Also, it changes its sign for the QW structure grown on InGaN buffer layer with a relatively larger In composition (x > 0.07). These results are in good agreement with the experiment. This can be explained by the fact that, with increasing In composition in the InGaN subsrate, the spontaneous emission rate for the y′-polarization gradually increases while that for x′-polarization decreases due to the decrease in a matrix element at the band-edge (k‖ = 0).

InGaN directional coupler made with a one-step etching technique

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Zhang, Shuai; Shi, Zheng; Li, Xin; Wang, Yongjin

2017-06-01

We propose, fabricate and characterize an on-chip integration of light source, InGaN waveguide, directional coupler and photodiode, in which AlGaN layers are used as top and bottom optical claddings to form an InGaN waveguide for guiding the in-plane emitted light from the InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED). The difference in etch rate caused by different exposure windows leads to an etching depth discrepancy using the one-step etching technique, which forms the InGaN directional coupler with the overlapped underlying slab. Light propagation results directly confirm effective light coupling in the InGaN directional coupler, which is achieved through high-order guided modes. The InGaN waveguide couples the modulated light from the InGaN/GaN MQW-LED and transfers part of light to the coupled waveguide via the InGaN directional coupler. The in-plane InGaN/GaN MQW-photodiode absorbs the guided light by the coupled InGaN waveguide and induces the photocurrent. The on-chip InGaN photonic integration experimentally demonstrates an in-plane light communication with a data transmission of 50 Mbps.

In(1-x)Ga(x)N@ZnO: a rationally designed and quantum dot integrated material for water splitting and solar harvesting applications.

PubMed

Rajaambal, Sivaraman; Mapa, Maitri; Gopinath, Chinnakonda S

2014-09-07

The highly desirable combination of the visible light absorption properties of In1-xGaxN Quantum dots (QD) along with the multifunctionality of ZnO into a single integrated material was prepared for solar harvesting. This is the first report on InGaN QD integrated with ZnO (InGaN@ZnO), synthesized by a highly reproducible, simple combustion method in 15 min. Structural, microstructural and electronic integration of the nitride and oxide components of InGaN@ZnO was demonstrated by appropriate characterization methods. Self-assembly of InGaN QD is induced in growing nascent zinc oxo nanoclusters taking advantage of the common wurtzite structure and nitrogen incorporation at the expense of oxygen vacancies. Direct integration brings about a single phase structure exhibiting extensive visible light absorption and high photostability. InGaN@ZnO suggests synergistic operation of light harvesting and charge conducting components for solar H2 generation without using any co-catalyst or sacrificial agent, and a promising photocurrent generation at 0 V under visible light illumination. The present study suggests a direct integration of QD with the host matrix and is a potential method to realize the advantages of QDs.

High-Modulation-Speed LEDs Based on III-Nitride

NASA Astrophysics Data System (ADS)

Chen, Hong

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Gheshlaghi, N.; Sözen, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-04-01

We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.

Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

NASA Astrophysics Data System (ADS)

Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

1997-03-01

We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. (figures)

Theoretical analysis of AlGaN/GaN resonant tunnelling diodes with step heterojunctions spacer and sub-quantum well

NASA Astrophysics Data System (ADS)

Liu, Y.; Gao, B.; Gong, M.

2017-06-01

In this paper, we proposed to use step heterojunctions emitter spacer (SHES) and InGaN sub-quantum well in AlGaN/GaN/AlGaN double barrier resonant tunnelling diodes (RTDs). Theoretical analysis of RTD with SHES and InGaN sub-quantum well was presented, which indicated that the negative differential resistance (NDR) characteristic was improved. And the simulation results, peak current density JP=82.67 mA/μm2, the peak-to-valley current ratio PVCR=3.38, and intrinsic negative differential resistance RN=-0.147Ω at room temperature, verified the improvement of NDR characteristic brought about by SHES and InGaN sub-quantum well. Both the theoretical analysis and simulation results showed that the device performance, especially the average oscillator output power presented great improvement and reached 2.77mW/μm2 magnitude. And the resistive cut-off frequency would benefit a lot from the relatively small RN as well. Our works provide an important alternative to the current approaches in designing new structure GaN based RTD for practical high frequency and high power applications.

Leading Modes of the 3pi0 production in proton-proton collisions at incident proton momentum 3.35GeV/c

NASA Astrophysics Data System (ADS)

Jampana, Balakrishnam R.

The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-bandgap (0.7 eV -- 3.4 eV), and other electronic, optical and mechanical properties. However, this novel InGaN material system poses technological challenges which extended into the performance of InGaN devices. The development of wide-band gap p--n InGaN homojunction solar cells with bandgap < 2.4 eV is investigated in the present work. The growth, fabrication and characterization of a 2.7 eV bandgap InGaN solar cell with a 1.73 eV open-circuit voltage is demonstrated. Limited solar cell performance, in terms of short-circuit current and efficiency, is observed. The poor performance of the InGaN solar cell is related to the formation of extended crystalline defects in InGaN epilayers of the solar cell structure. To investigate the influence of extended crystalline defects on InGaN epilayer properties, a few In0.12Ga0.88N epilayers with different thicknesses are grown and characterized for structural properties using high-resolution X-ray diffraction. The structural parameters, modeled as mosaic blocks, indicate deterioration in InGaN crystal quality when the film thickness exceeds a critical layer thickness. An associated increase in density of threading dislocations with deteriorated InGaN crystal quality is observed. The critical layer thickness is determined for a few InGaN compositions in the range of 6 -- 21 % In, and it decreases with increasing InGaN composition. Surface roughening and formation of V-defects are observed on InGaN surface beyond the critical layer thickness. An Urbach tail in optical absorption of InGaN epilayer is observed and it is related to the formation of V-defects. The direct consequence of light absorption via V-defects is a decrease in photoluminescence peak intensity with increasing InGaN epilayer thickness beyond critical layer thickness. Two p-i-n InGaN solar cell structures were designed, with InGaN epilayer thickness in one solar cell greater than the critical layer thickness and the other with a lower thickness, to investigate the influence of V-defects on performance of the solar cells. The photoresponse of the p-i-n InGaN solar cell with thicker InGaN epilayer is poor, while the other solar cell had good photoresponse and external quantum efficiency. Extending this investigation to a p-n InGaN solar cell, a solar cell with total InGaN epilayer less than the critical layer thickness is grown. The photoresponse and external quantum efficiency of the present solar cell is superior compared to the initially designed p-n InGaN homojunction solar cells. Solar cell characteristics without p-GaN capping layer in the above p-n InGaN solar cell are also investigated. Good open-circuit voltage is observed, but the short-circuit current and efficiency are limited by the formation of extended crystalline defects, as observed with other initial solar cell designs. A processing sequence is developed to coat III-nitride sidewalls, created during fabrication to form electrical contacts, with SiO2 to maximize the active device area and minimize accidental damage of solar cell during fabrication. Additionally, deposition of current spreading layers on p-type III-nitride epilayer to reduce the series resistance is evaluated. The III-nitrides are primarily grown on sapphire substrate and in a continued effort they are realized later on silicon substrate. InGaN solar cell structures were grown simultaneously on GaN/sapphire and GaN/silicon templates and their photoresponse is compared.

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Hafiz, Shopan D.; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

Enhancement of coherent zone folded longitudinal acoustic phonon (ZFLAP) oscillations at terahertz frequencies was demonstrated in InGaN multiple quantum wells (MQWs) by using wavelength degenerate time resolved differential transmission spectroscopy. Screening of the piezoelectric field in InGaN MQWs by photogenerated carriers upon femtosecond pulse excitation gave rise to terahertz ZFLAPs, which were monitored at the Brillouin zone center in the transmission geometry. MQWs composed of 10 pairs InxGa1-xN wells and In0.03Ga0.97N barriers provided coherent phonon frequencies of 0.69-0.80 THz depending on the period of MQWs. Dependences of ZFLAP amplitude on excitation density and wavelength were also investigated. Possibility of achieving phonon cavity, incorporating a MQW placed between two AlN/GaN phonon mirrors designed to exhibit large acoustic gaps at the zone center, was also explored.

Low-threshold indium gallium nitride quantum dot microcavity lasers

NASA Astrophysics Data System (ADS)

Woolf, Alexander J.

Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the derivation and analysis of the laser rate equations. A thorough examination of the rate equations serves as a natural motivation for QDs and high-quality factor low-modal volume resonators as an optimal laser gain medium and cavity, respectively. The combination of the two theoretically yields the most efficient semiconductor laser device possible. Part III describes in detail the design, growth, fabrication and characterization of the first InGaN QD microcavity laser. Additional experiments are also conducted in order to conclusively prove that the InGaN QDs serve as the gain medium and facilitate laser oscillation within the microdisk cavities. Part III continues with work related towards the development of the next generation of nitride light emitting devices. This includes the realization of photonic crystal cavity (PCC) fragmented quantum well (FQW) lasers that exhibit record low lasing thresholds of 9.1 muJ/cm2, comparable to the best devices in other III-V material systems. Part III also discusses cavity QED experiments on InGaN QDs embedded within GaN PCCs in order to quantify the degree of light-matter interaction. The lack of experimental evidence for weak or strong coupling, in the form of the Purcell Effect or cavity-mode anti-crossing respectively, naturally motivates the question of what mechanism is limiting the device performance. Part III concludes with cathodoluminesence and tapered fiber measurements in order to identify the limiting factor towards achieving strong coupling between InGaN QDs and GaN microcavities.

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

NASA Astrophysics Data System (ADS)

Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Gunning, Brendan P.; Koleske, Dan; Zhao, Yuji

2017-12-01

We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density-voltage (J-V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Das, Saikat; Izyumskaya, Natalia; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

NASA Astrophysics Data System (ADS)

Onuma, Takeyoshi; Chichibu, Shigefusa F.; Aoyama, Toyomi; Nakajima, Kiyomi; Ahmet, Parhat; Azuhata, Takashi; Chikyow, Toyohiro; Sota, Takayuki; Nagahama, Shin-ichi; Mukai, Takashi

2003-12-01

Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (FQW) was estimated to be 490 kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4 MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4 V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of FQW and population inversion under high excitation conditions.

Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

NASA Astrophysics Data System (ADS)

Abdullah, Rafid A.; Ibrahim, Kamarulazizi

2010-07-01

ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

NASA Astrophysics Data System (ADS)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Optical properties of wide gap semiconductors studied by means of cathodoluminescence

NASA Astrophysics Data System (ADS)

Fischer Ponce, Alec Mirco

III-nitride semiconductors have been found to be a suitable material for the fabrication of light-emitting diodes (LEDs) emitting in the visible and ultraviolet range through the use of indium gallium nitride (InGaN) active layers. Yet, achieving high-efficient and long lasting LEDs in the long wavelength range, especially in the green spectral region, is limited by difficulties of growth of InGaN layers with high indium content. Additionally, device efficiency is strongly dependent on the formation of low-resistive p-type gallium nitride (GaN)-based layers. In this dissertation, the optical properties of wide gap semiconductor are analyzed using cathodoluminescence imaging and spectroscopy, and time-resolved spectroscopic techniques. A transition at 3.2 eV in magnesium (Mg)-doped GaN has been revealed and it has been identified as a Mg-related donor-acceptor pair, which may be responsible for the increase in intensity with increasing magnesium concentration in the commonly observed donor-acceptor pair region. In a separate study, a decrease of the Mg acceptor energy level and the bulk resistivity in Mg-doped InGaN with increasing indium composition is observed, implying that InGaN p-layers should improve the device performance. Next, Mg-doped GaN and InGaN capping layers in LED structures grown under different ambient gases are shown to alter the quantum well (QW) luminescence. QWs grown with InGaN p-layers exhibit an improvement in the luminescence efficiency and a blue-shift due to reduction of the compressive misfit strain in the QWs. However, p-GaN layers grown under hydrogen ambient gas present a blue-shift of the QW emission. Hydrogen diffusion occurring after thermal annealing of the p-GaN layer may explain the reduction of piezoelectric field effects in polar InGaN quantum wells. In another study, InGaN QWs with high indium content grown in non-polar m-plane GaN were found to exhibit stacking faults originating at the first QW, relaxing the misfit strain in the subsequent layers. Finally, the optical and structural properties of highly luminescent zinc oxide (ZnO) tetrapod powders emitting in the visible green spectral range were studied with high spatial resolution. ZnO nanostructures are strong candidates for devices emitting light with very high efficiencies.

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chiao-Yun; Li, Heng; Shih, Yang-Ta

2015-03-02

We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase themore » carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.« less

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-08-18

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resultedmore » from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.« less

Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yue, E-mail: yuelin@fjirsm.ac.cn; Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002; Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian 361005

2014-01-14

We perform both spatially resolved electroluminescence (SREL) as a function of injection current and spatially resolved photoluminescence (SRPL) as a function of excitation power on InGaN quantum well blue light-emitting diodes to investigate the underlying physics for the phenomenon of the external quantum efficiency (EQE) droop. SREL allows us to study two most commonly observed but distinctly different droop behaviors on a single device, minimizing the ambiguity trying to compare independently fabricated devices. Two representative devices are studied: one with macroscopic scale material non-uniformity, the other being macroscopically uniform, but both with microscopic scale fluctuations. We suggest that the EQE–currentmore » curve reflects the interplay of three effects: nonradiative recombination through point defects, carrier localization due to either In composition or well width fluctuation, and nonradiative recombination of the extended defects, which is common to various optoelectronic devices. By comparing SREL and SRPL, two very different excitation/detection modes, we show that individual singular sites exhibiting either particularly strong or weak emission in SRPL do not usually play any significant and direct role in the EQE droop. We introduce a two-level model that can capture the basic physical processes that dictate the EQE–current dependence and describe the whole operating range of the device from 0.01 to 100 A/cm{sup 2}.« less

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Khachapuridze, A.; Suski, T.; Skierbiszewski, C.

2014-06-01

It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorption-like technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect.

PubMed

Jiang, Chunyan; Jing, Liang; Huang, Xin; Liu, Mengmeng; Du, Chunhua; Liu, Ting; Pu, Xiong; Hu, Weiguo; Wang, Zhong Lin

2017-09-26

The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the interface to largely enhance the efficiency of optoelectronic processes related to carrier separation or recombination. Here, we demonstrated the enhanced short-circuit current density and the conversion efficiency of InGaN/GaN multiple quantum well solar cells with an external stress applied on the device. The external-stress-induced piezoelectric charges generated at the interfaces of InGaN and GaN compensate the piezoelectric charges induced by lattice mismatch stress in the InGaN wells. The energy band realignment is calculated with a self-consistent numerical model to clarify the enhancement mechanism of optical-generated carriers. This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.

In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum wells

NASA Astrophysics Data System (ADS)

Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Takeda, Yoshikazu

2013-05-01

GaN/InxGa1-xN/GaN single quantum wells (SQWs) have been grown on c-plane GaN/sapphire substrates using MOVPE system. PL (photoluminescence) and AFM (atomic force microscope) measurements demonstrate good quality of after-growth thermal-annealed SQWs. In situ XRD (X-ray diffraction), XRR (X-ray reflectivity), and X-ray CTR (crystal truncation rod) scattering measurements were successfully conducted on the SQWs under the NH3+N2 ambient at 1103 K. The analysis results of the XRR and the X-ray CTR spectra at 1103 K and at 300 K on the same sample matched well. It demonstrated that In0.09Ga0.91N SQW structure with several ML (monolayer) InGaN thicknesses was successfully investigated using the XRR and CTR scattering measurements at 1103 K.

Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission

NASA Astrophysics Data System (ADS)

Kowsz, Stacy J.; Pynn, Christopher D.; Wu, Feng; Farrell, Robert M.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

2016-02-01

We report a semipolar III-nitride device in which an electrically injected blue light emitting diode optically pumps monolithic long wavelength emitting quantum wells (QWs) to create polarized white light. We have demonstrated an initial device with emission peaks at 440 nm and 560 nm from the electrically injected and optically pumped QWs, respectively. By tuning the ratio of blue to yellow, white light was measured with a polarization ratio of 0.40. High indium content InGaN is required for long wavelength emission but is difficult to achieve because it requires low growth temperatures and has a large lattice mismatch with GaN. This device design incorporates optically pumped QWs for long wavelength emission because they offer advantages over using electrically injected QWs. Optically pumped QWs do not have to be confined within a p-n junction, and carrier transport is not a concern. Thus, thick GaN barriers can be incorporated between multiple InGaN QWs to manage stress. Optically pumping long wavelength emitting QWs also eliminates high temperature steps that degrade high indium content InGaN but are required when growing p-GaN for an LED structure. Additionally, by eliminating electrical injection, the doping profile can instead be engineered to affect the emission wavelength. We discuss ongoing work focused on improving polarized white light emission by optimizing the optically pumped QWs. We consider the effects of growth conditions, including: trimethylindium (TMI) flow rate, InGaN growth rate, and growth temperature. We also examine the effects of epitaxial design, including: QW width, number of QWs, and doping.

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Neeraj; Department of Materials Science, Gulbarga University, Gulbarga 585106; Roul, Basanta, E-mail: basantaroul@gmail.com

2015-01-15

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore » InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.« less

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

DOEpatents

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Linearly polarized light emission from InGaN/GaN quantum well structure with high indium composition.

PubMed

Song, Hooyoung; Kim, Eun Kyu; Han, Il Ki; Lee, Sung-Ho; Hwang, Sung-Min

2011-10-01

We fabricated yellow (575 nm) emitting a-plane InGaN/GaN light emitting diode (LED). Microstructure and stress relaxation of the InGaN well layer were observed from the images of dark field transmission electron microscopy. The LED chip was operated at 3.7 V, 20 mA, and the polarization-free characteristic in nonpolar InGaN layer was confirmed from a small blue-shift of approximaely 1.7 nm with increase of current density. The high photoluminescence (PL) efficiency of 30.4% showed that this non-polar InGaN layer has a potential of application to green-red long wavelength light emitters. The PL polarization ratio at 290 K was 0.25 and the energy difference between two subbands was estimated to be 40.2 meV. The low values of polarization and energy difference were due to the stress relaxation of InGaN well layer.

Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahal, R.; Pantha, B. N.; Li, J.

2014-04-07

InGaN alloys are very promising for solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. The demonstration of direct solar-to-fuel conversion without external bias with the sunlight being the only energy input would pave the way for realizing photoelectrochemical (PEC) production of hydrogen by using InGaN. A monolithic solar-PEC cell based on InGaN/GaN multiple quantum wells capable to directly generate hydrogen gas under zero bias via solar water splitting is reported. Under the irradiation by a simulated sunlight (1-sun with 100 mW/cm{sup 2}), a 1.5% solar-to-fuel conversion efficiency has been achieved under zero bias,more » setting a fresh benchmark of employing III-nitrides for artificial photosynthesis. Time dependent hydrogen gas production photocurrent measured over a prolonged period (measured for 7 days) revealed an excellent chemical stability of InGaN in aqueous solution of hydrobromic acid. The results provide insights into the architecture design of using InGaN for artificial photosynthesis to provide usable clean fuel (hydrogen gas) with the sunlight being the only energy input.« less

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

PubMed Central

2014-01-01

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

Wetting layer effect on impurity-related electronic properties of different (In,Ga)N QD-shapes

NASA Astrophysics Data System (ADS)

El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine; Feddi, El Mustapha; El Mouchtachi, Ahmed

2018-05-01

In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular and square based-pyramidal and their wetting layers embedded in GaN matrix were considered. Based on the single band parabolic and the effective mass approximations, the envelop function and its corresponding energy eigenvalue are obtained assuming a finite potential barrier. Our results reveal that: (1) the wetting layer has a great influence on the electronic properties especially for a small quantum dot and acts in the opposite sense of the geometrical confinement, (2) a wetting layer-dependent critical QD-size is obtained limiting two different behaviors and (3) its effect is strongly-dependent on the quantum dot-shape.

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

PubMed Central

2014-01-01

This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. PMID:25147848

p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures

NASA Astrophysics Data System (ADS)

Zuo, P.; Jiang, Y.; Ma, Z. G.; Wang, L.; Zhao, B.; Li, Y. F.; Yue, G.; Wu, H. Y.; Yan, H. J.; Jia, H. Q.; Wang, W. X.; Zhou, J. M.; Sun, Q.; Liu, W. M.; Ji, An-Chun; Chen, H.

2017-08-01

The GaN-based p -n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p -n junction rectifying characteristics can be realized with pure n -type structures by inserting an (In,Ga)N quantum well into the GaN /(Al ,Ga )N /GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In ,Ga )N /GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p -n junction rectifying characteristics.

Effect of threading defects on InGaN /GaN multiple quantum well light emitting diodes

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2007-12-01

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1×107-2×108cm-2.

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy

NASA Astrophysics Data System (ADS)

Woodward, Jeffrey Michael

The development of InGaN quantum dots (QDs) is both scienti?cally challenging and promising for applications in visible spectrum LEDs, lasers, detectors, electroabsorption modulators and photovoltaics. Such QDs are typically grown using the Stranski-Krastanov (SK) growth mode, in which accumulated in-plane compressive strain induces a transition from 2D to 3D growth. This method has a number of inherent limitations, including the unavoidable formation of a 2D wetting layer and the di?culty of controlling the composition, areal density, and size of the dots. In this research, I have developed InGaN QDs by two methods using a plasma-assisted molecular beam epitaxy reactor. In the ?rst method, InGaN QDs were formed by SK growth mode on (0001) GaN/sapphire. In the second, I have addressed the limitations of the SK growth of InGaN QDs by developing a novel alternative method, which was utilized to grow on both (0001) GaN/sapphire and AlN/sapphire. This method relies upon the ability to form thermodynamically stable In-Ga liquid solutions throughout the entire compositional range at relatively low temperatures. Upon simultaneous or sequential deposition of In and Ga on a substrate, the adatoms form a liquid solution, whose composition is controlled by the ratio of the fluxes of the two constituents FIn/(FIn+FGa ). Depending on the interfacial free energy between the liquid deposit and substrate, the liquid deposit and vapor, and the vapor and substrate, the liquid deposit forms Inx-Ga1- x nano-droplets on the substrate. These nano-droplets convert into InxGa1-xN QDs upon exposure to nitrogen RF plasma. InGaN QDs produced by both methods were investigated in-situ by reflection high-energy electron diffraction and ex-situ by atomic force microscopy, field emission scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and grazing incidence small angle x-ray scattering. The optical activity and device potential of the QDs were investigated by photoluminescence measurements and the formation and evaluation of PIN devices (in which the intrinsic region contains QDs embedded within a higher bandgap matrix). InGaN QDs with areal densities ranging from 109 to 1011 cm -2 and diameters ranging from 11 to 39 nm were achieved.

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Wildeson, Isaac H.; Colby, Robert; Ewoldt, David A.; Liang, Zhiwen; Zakharov, Dmitri N.; Zaluzec, Nestor J.; García, R. Edwin; Stach, Eric A.; Sands, Timothy D.

2010-08-01

Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {11¯01} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to ˜20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K, respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the (In,Ga)N quantum wells and GaN cladding layers grown at 650-780 °C, present in 38% of the nanopyramid heterostructures. Plan-view TEM of the planar defects confirms that these defects do not terminate within the nanopyramids. During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.

2014-12-15

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibitsmore » a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.« less

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

PubMed

Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

2015-11-16

Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

A Phosphine-Free Route to Size-Adjustable CdSe and CdSe/CdS Core-Shell Quantum Dots for White-Light-Emitting Diodes.

PubMed

Zhang, Yugang; Li, Guopeng; Zhang, Ting; Song, Zihang; Wang, Hui; Zhang, Zhongping; Jiang, Yang

2018-03-01

The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Simulation and optimization of deep violet InGaN double quantum well laser

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.

2012-03-01

The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

NASA Astrophysics Data System (ADS)

Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit

2015-03-01

Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 x 1016 cm-3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x107 s-1, 8.8x10-10 cm3s-1), (8.5x107 s-1, 6.6x10-10 cm3s-1), and (6.5x107 s-1, 1.4x10-10 cm3s-1) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τrad α Tn/2, the dimensionality n of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T1.5 dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

NASA Astrophysics Data System (ADS)

Qin, Chuan; Gao, Xumin; Yuan, Jialei; Shi, Zheng; Jiang, Yuan; Liu, Yuhuai; Wang, Yongjin; Amano, Hiroshi

2018-05-01

A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe x S(1 - x) Quantum Dots

NASA Astrophysics Data System (ADS)

Wang, Rongfang; Wei, Xingming; Qin, Liqin; Luo, Zhihui; Liang, Chunjie; Tan, Guohang

2017-01-01

Thioglycolic acid-capped CdTe x S(1 - x) quantum dots (QDs) were synthesized through a one-step approach in an aqueous medium. The CdTe x S(1 - x) QDs played the role of a color conversion center. The structural and luminescent properties of the obtained CdTe x S(1 - x) QDs were investigated. The fabricated red light-emitting hybrid device with the CdTe x S(1 - x) QDs as the phosphor and a blue InGaN chip as the excitation source showed a good luminance. The Commission Internationale de L'Eclairage coordinates of the light-emitting diode (LED) at (0.66, 0.29) demonstrated a red LED. Results showed that CdTe x S(1 - x) QDs can be excited by blue or near-UV regions. This feature presents CdTe x S(1 - x) QDs with an advantage over wavelength converters for LEDs.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

NASA Astrophysics Data System (ADS)

Bergbauer, W.; Strassburg, M.; Kölper, Ch; Linder, N.; Roder, C.; Lähnemann, J.; Trampert, A.; Fündling, S.; Li, S. F.; Wehmann, H.-H.; Waag, A.

2010-07-01

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 µm h - 1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.

PubMed

Bergbauer, W; Strassburg, M; Kölper, Ch; Linder, N; Roder, C; Lähnemann, J; Trampert, A; Fündling, S; Li, S F; Wehmann, H-H; Waag, A

2010-07-30

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO(2) masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 microm h(-1) were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.

PubMed

Hwang, Yun Jeong; Wu, Cheng Hao; Hahn, Chris; Jeong, Hoon Eui; Yang, Peidong

2012-03-14

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting. © 2012 American Chemical Society

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth of N-polar InGaN by MOCVD is challenging. These challenges arise from the lack of available native substrates suitable for N-polar film growth. As a result, InGaN layers are conventionally grown in the III-polar direction (i.e. III-polar InGaN) and typically grow under considerable amounts of stress on III-polar GaN base layers. While the structure-property relations of thin III-polar InGaN layers have been widely studied in quantum well structures, insight into the growth of thick films and N-polar InGaN layers have been limited. Therefore, this dissertation research compared the growth of both thick III-polar and N-polar InGaN films grown on optimized GaN base layers. III-polar InGaN films were rough and exhibited a high density of V-pits, while the growth of thick N-polar InGaN films showed improved structural quality and low surface roughness. The results of this dissertation work thereby provide an alternative route to the fabrication of thick InGaN films for potential use in solar cells as well as strain reducing schemes for deep-green and red light emitters. Moreover, this dissertation investigated stress relaxation in thick N-polar films using in situ reflectivity and curvature measurements. The results showed that stress relaxation in N-polar InGaN significantly differed from III-polar InGaN due to the absence of V-pits and it was hypothesized that plastic relaxation in N-polar InGaN could occur by dislocation glide, which typically is kinetically limited at such low growth temperatures required for InGaN. The second part of this dissertation research work focused on buffer free growth of GaN directly on SiC and on epitaxial graphene produced on SiC for potential vertical devices. The studies presented in this dissertation work on the growth of GaN directly on SiC compared the stress evolution of GaN films grown with and without an AlN buffer layer. Films grown directly on SiC showed reduced threading dislocation densities and improved surface roughness when compared to the growth of GaN on an AlN buffer layer. The dislocations in the GaN films grown di

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw; Shivaraman, Ravi

2014-09-21

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

PubMed

Park, Min Joo; Kwon, K W; Kim, Y H; Park, S H; Kwak, Joon Seop

2011-05-01

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Effect of QW thickness and numbers on performance characteristics of deep violet InGaN MQW lasers

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

2015-03-01

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been investigated using the integrated system engineering technical computer aided design (ISE-TCAD) software. A comparative study on the effect of quantum well (QW) thickness and number on electrical and optical performance of deep violet In0.082Ga0.918N/GaN MQW LDs have been carried out. The simulation results showed that the highest slope efficiency and external differential quantum efficiency (DQE), as well as the lowest threshold current are obtained when the number of wells is two. The different QW thickness values of 2.2, 2.5, 2.8, 3 and 3.2 nm were compared and the best results were achieved for 2.5 nm QW thickness. The radiative recombination rate decreases with increasing QW thickness because of decreasing electron and hole carrier densities in wells. By increasing QW thickness, output power decreases and threshold current increases.

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

Iodine-stabilized single-frequency green InGaN diode laser.

PubMed

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

In0.15Ga0.85N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH3

NASA Astrophysics Data System (ADS)

Wang, Hongxia; Zhang, Xiaohan; Wang, Hailong; Lv, Zesheng; Li, Yongxian; Li, Bin; Yan, Huan; Qiu, Xinjia; Jiang, Hao

2018-05-01

InGaN visible-light metal-semiconductor-metal photodetectors with GaN interlayers deposited by pulsed NH3 were fabricated and characterized. By periodically inserting the GaN thin interlayers, the surface morphology of InGaN active layer is improved and the phase separation is suppressed. At 5 V bias, the dark current reduced from 7.0 × 10-11 A to 7.0 × 10-13 A by inserting the interlayers. A peak responsivity of 85.0 mA/W was measured at 420 nm and 5 V bias, corresponding to an external quantum efficiency of 25.1%. The insertion of GaN interlayers also lead to a sharper spectral response cutoff.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ju, James; Haunschild, Georg; Loitsch, Bernhard

2016-04-15

The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga) < 0.2) yields a more than 10-fold reduction in thermal conductivity (κ) without deteriorating electrical conductivity (σ), while the Seebeck coefficient (S) increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga) = 0.1) with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm{supmore » 2}/V s at an electron density n{sub e} of ∼5×10{sup 19} cm{sup −3}, leading to an exceptionally high σ of ∼5400 (Ωcm){sup −1}. Simultaneously, in very short-period SL structures S becomes decoupled from n{sub e}, κ is further reduced below the alloy limit (κ < 9 W/m-K), and the power factor increases to 2.5×10{sup −4} W/m-K{sup 2} by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.« less

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lang, J. R.; Neufeld, C. J.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Mishra, U. K.; Speck, J. S.

2011-03-01

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

DOE PAGES

Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; ...

2015-04-01

The influence of a dilute In xGa 1-xN (x~0.03) underlayer (UL) grown below a single In 0.16Ga 0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that themore » improved radiative efficiency resulted from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

Effect of interface roughness on Auger recombination in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson

2017-03-01

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

Quantitative Scanning Transmission Electron Microscopy of Electronic and Nanostructured Materials

NASA Astrophysics Data System (ADS)

Yankovich, Andrew B.

Electronic and nanostructured materials have been investigated using advanced scanning transmission electron microscopy (STEM) techniques. The first topic is the microstructure of Ga and Sb-doped ZnO. Ga-doped ZnO is a candidate transparent conducting oxide material. The microstructure of GZO thin films grown by MBE under different growth conditions and different substrates were examined using various electron microscopy (EM) techniques. The microstructure, prevalent defects, and polarity in these films strongly depend on the growth conditions and substrate. Sb-doped ZnO nanowires have been shown to be the first route to stable p-type ZnO. Using Z-contrast STEM, I have showed that an unusual microstructure of Sb-decorated head-to-head inversion domain boundaries and internal voids contain all the Sb in the nanowires and cause the p-type conduction. InGaN thin films and InGaN / GaN quantum wells (QW) for light emitting diodes are the second topic. Low-dose Z-contrast STEM, PACBED, and EDS on InGaN QW LED structures grown by MOCVD show no evidence for nanoscale composition variations, contradicting previous reports. In addition, a new extended defect in GaN and InGaN was discovered. The defect consists of a faceted pyramid-shaped void that produces a threading dislocation along the [0001] growth direction, and is likely caused by carbon contamination during growth. Non-rigid registration (NRR) and high-precision STEM of nanoparticles is the final topic. NRR is a new image processing technique that corrects distortions arising from the serial nature of STEM acquisition that previously limited the precision of locating atomic columns and counting the number of atoms in images. NRR was used to demonstrate sub-picometer precision in STEM images of single crystal Si and GaN, the best achieved in EM. NRR was used to measure the atomic surface structure of Pt nanoacatalysts and Au nanoparticles, which revealed new bond length variation phenomenon of surface atoms. In addition, NRR allowed for measuring the 3D atomic structure of the nanoparticles with less than 1 atom uncertainty, a long-standing problem in EM. Finally, NRR was adapted to EDS spectrum images, significantly enhancing the signal to noise ratio and resolution of an EDS spectrum image of Ca-doped NdTiO3 compared to conventional methods.

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.

PubMed

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

NASA Astrophysics Data System (ADS)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

2018-03-01

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments

NASA Astrophysics Data System (ADS)

Bertazzi, Francesco; Goano, Michele; Calciati, Marco; Zhou, Xiangyu; Ghione, Giovanni; Bellotti, Enrico

2014-02-01

Auger recombination is at the hearth of the debate on droop, the decline of the internal quantum efficiency at high injection levels. The theory of Auger recombination in quantum wells is reviewed. The proposed microscopic model is based on a full-Brillouin-zone description of the electronic structure obtained by nonlocal empirical pseudopotential calculations and the linear combination of bulk bands. The lack of momentum conservation along the confining direction in InGaN/GaN quantum wells enhances direct (i.e. phononless) Auger transitions, leading to Auger coefficients in the range of those predicted for phonon-dressed processes in bulk InGaN.

Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

NASA Astrophysics Data System (ADS)

Wen, Pengyan; Liu, Jianping; Zhang, Shuming; Zhang, Liqun; Ikeda, Masao; Li, Deyao; Tian, Aiqin; Zhang, Feng; Cheng, Yang; Zhou, Wei; Yang, Hui

2017-11-01

The temperature, power, and voltage dependent photoluminescence spectra are studied in InGaN/GaN double quantum well blue laser diodes. Emissions from the two quantum wells can be distinguished at low temperature at low excitation power density due to the different built-in electric field in the two quantum wells. This finding is utilized to study the degradation of InGaN/GaN blue laser diodes. Two peaks are observed for the non-aged laser diode (LD), while one peak for the aged LD which performed 3200 h until no laser output is detected. The disappearance of the high energy peak in the photoluminescence spectra indicates a heavier degradation of the quantum well on the p-side, which agrees with our previous observation that both the linewidth and the potential fluctuation of InGaN quantum wells (QWs) reduced for the aged LDs.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

PubMed Central

Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Müller, Mathias; August, Olga; Bertram, Frank; Christen, Jürgen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang

2017-01-01

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1−xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ~220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices. PMID:28417975

Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

PubMed

Ho, Cheng-Han; Lien, Der-Hsien; Chang, Hung-Chih; Lin, Chin-An; Kang, Chen-Fang; Hsing, Meng-Kai; Lai, Kun-Yu; He, Jr-Hau

2012-12-07

We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

NASA Astrophysics Data System (ADS)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

InN/InGaN dot-in-a-wire nanostructures emitting at 1.55 µm

NASA Astrophysics Data System (ADS)

Chen, Qiming; Yan, Changling; Qu, Yi

2017-03-01

The room temperature photoluminescence emission at 1.55 µm from InN/In0.7Ga0.3N dot-in-nanowire heterostructures, which was grown on self-assembled GaN nanowires on Si (1 1 1) under N-rich condition by plasma assisted molecular beam epitaxy, has been clarified in this paper. The morphology of the nanowires was uniform along the c-axis as proved by scanning electron microscope, each of the nanowires was grown individually and homogeneously without any coalescence phenomenon respectively. The nanowires dispersed on a silicon substrate showed very clear InN dot-in-nanowire structure by high resolution transmission electron microscopy. The structural properties of the individual InGaN nanocolumn were further investigated by high-angle annular dark field image analysis and energy dispersive x-ray spectrum, which confirmed the successful growth of InN quantum dot embedded in InGaN nanowire.

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

PubMed Central

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. PMID:24369453

Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

NASA Astrophysics Data System (ADS)

Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

2018-04-01

We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

DOE PAGES

Limbach, F.; Gotschke, T.; Stoica, T.; ...

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Höfling, S.; Worschech, L.; Grützmacher, D.

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

PubMed

Seo, Yong Gon; Baik, Kwang Hyeon; Song, Hooyoung; Son, Ji-Su; Oh, Kyunghwan; Hwang, Sung-Min

2011-07-04

We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms

NASA Astrophysics Data System (ADS)

Yang, J.; Liu, S. T.; Wang, X. W.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liang, F.; Liu, W.; Zhang, L. Q.; Yang, H.; Wang, W. J.; Li, M.

2018-01-01

InGaN samples are grown using metalorganic chemical vapor deposition (MOCVD) and the dependences of structural and luminescence properties of InGaN layers on growth temperature are studied. It is found that the luminescence properties of InGaN layer are improved by increasing growth temperature properly. However, when the growth temperature of InGaN layer is too higher (740 °C in our work), a large amount of unintentionally incorporated gallium atoms enter into InGaN, and a spiral growth mode dominates in this case. It results in an inferior crystalline and interface quality, and ultimately degrades the luminescence of InGaN.

Effect of defects on the electrical/optical performance of gallium nitride based junction devices

NASA Astrophysics Data System (ADS)

Ferdous, Mohammad Shahriar

Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current increased exponentially, and electroluminescence intensity decreased by 22%, as the TD density in the LEDs increased from 1.7 x 107 cm-2 to 2 x 108 cm-2. Forward voltage remained almost constant with the increase of TD density. A model of carrier conduction via hopping through defect related states, was found to provide an excellent fit to the experimental I-V data and provides a useful basis for understanding carrier conduction in the presence of TDs.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

PubMed

Hahn, Christopher; Zhang, Zhaoyu; Fu, Anthony; Wu, Cheng Hao; Hwang, Yun Jeong; Gargas, Daniel J; Yang, Peidong

2011-05-24

Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the ⟨002⟩ direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.

Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting.

PubMed

Caccamo, Lorenzo; Hartmann, Jana; Fàbrega, Cristian; Estradé, Sonia; Lilienkamp, Gerhard; Prades, Joan Daniel; Hoffmann, Martin W G; Ledig, Johannes; Wagner, Alexander; Wang, Xue; Lopez-Conesa, Lluis; Peiró, Francesca; Rebled, José Manuel; Wehmann, Hergo-Heinrich; Daum, Winfried; Shen, Hao; Waag, Andreas

2014-02-26

3D single-crystalline, well-aligned GaN-InGaN rod arrays are fabricated by selective area growth (SAG) metal-organic vapor phase epitaxy (MOVPE) for visible-light water splitting. Epitaxial InGaN layer grows successfully on 3D GaN rods to minimize defects within the GaN-InGaN heterojunctions. The indium concentration (In ∼ 0.30 ± 0.04) is rather homogeneous in InGaN shells along the radial and longitudinal directions. The growing strategy allows us to tune the band gap of the InGaN layer in order to match the visible absorption with the solar spectrum as well as to align the semiconductor bands close to the water redox potentials to achieve high efficiency. The relation between structure, surface, and photoelectrochemical property of GaN-InGaN is explored by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES), current-voltage, and open circuit potential (OCP) measurements. The epitaxial GaN-InGaN interface, pseudomorphic InGaN thin films, homogeneous and suitable indium concentration and defined surface orientation are properties demanded for systematic study and efficient photoanodes based on III-nitride heterojunctions.

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feix, F., E-mail: feix@pdi-berlin.de; Flissikowski, T.; Chèze, C.

2016-07-25

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission.more » We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.« less

Visible Quantum Nanophotonics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramania, Ganapathi Subramanian; Wang, George T.; Fischer, Arthur J.

2017-09-01

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDsmore » into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.« less

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

DOEpatents

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup ¯}1) planes using nanospherical-lens photolithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kui; Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084; Wei, Tongbo, E-mail: tbwei@semi.ac.cn

2013-12-09

We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup ¯}1) planes towards the substrate and the perpendicular direction to the (101{sup ¯}1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was foundmore » that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.« less

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures.

PubMed

Wang, Tong; Puchtler, Tim J; Patra, Saroj K; Zhu, Tongtong; Jarman, John C; Oliver, Rachel A; Schulz, Stefan; Taylor, Robert A

2017-09-21

We report the successful realisation of intrinsic optical polarisation control by growth, in solid-state quantum dots in the thermoelectrically cooled temperature regime (≥200 K), using a non-polar InGaN system. With statistically significant experimental data from cryogenic to high temperatures, we show that the average polarisation degree of such a system remains constant at around 0.90, below 100 K, and decreases very slowly at higher temperatures until reaching 0.77 at 200 K, with an unchanged polarisation axis determined by the material crystallography. A combination of Fermi-Dirac statistics and k·p theory with consideration of quantum dot anisotropy allows us to elucidate the origin of the robust, almost temperature-insensitive polarisation properties of this system from a fundamental perspective, producing results in very good agreement with the experimental findings. This work demonstrates that optical polarisation control can be achieved in solid-state quantum dots at thermoelectrically cooled temperatures, thereby opening the possibility of polarisation-based quantum dot applications in on-chip conditions.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NASA Astrophysics Data System (ADS)

Latzel, M.; Büttner, P.; Sarau, G.; Höflich, K.; Heilmann, M.; Chen, W.; Wen, X.; Conibeer, G.; Christiansen, S. H.

2017-02-01

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device’s active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 {nm} alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments—chemical etching and alumina deposition—reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

PubMed

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Enhanced characteristics of blue InGaN /GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

NASA Astrophysics Data System (ADS)

Lin, Ray-Ming; Lu, Yuan-Chieh; Chou, Yi-Lun; Chen, Guo-Hsing; Lin, Yung-Hsiang; Wu, Meng-Chyi

2008-06-01

We have studied the characteristics of blue InGaN /GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the mechanism of selective activation in the Mg-doped GaN layer, we deposited titanium (Ti), gold (Au), Ti /Au, silver, and copper individually onto the Mg-doped GaN layer and investigated their effects on the hole concentration in the p-GaN layer. The Mg-doped GaN layer capped with Ti effectively depressed the hole concentration in the p-GaN layer by over one order of magnitude relative to that of the as-grown layer. This may suggest that high resistive regions are formed by diffusion of Ti and depth of high resistive region from the p-GaN surface depends on the capped Ti film thickness. Selective activation of the Mg-doped GaN layer could be used to modulate the length of the lateral current path. Furthermore, the external quantum efficiency of the LEDs was improved significantly after reducing the lateral current spreading length. In our best result, the external quantum efficiency was 52.3% higher (at 100mA) than that of the as-grown blue LEDs.

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaehwan; Min, Daehong; Jang, Jongjin

2014-10-28

In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface.more » To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.« less

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

2015-01-01

Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds

NASA Astrophysics Data System (ADS)

Bi, Zhaoxia; Gustafsson, Anders; Lenrick, Filip; Lindgren, David; Hultin, Olof; Wallenberg, L. Reine; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars

2018-01-01

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent {" separators="| 10 1 ¯ 1 } facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, {" separators="| 10 1 ¯ 1 } and (0001). Typically, the InGaN growth on {" separators="| 10 1 ¯ 1 } planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by {" separators="| 10 1 ¯ 1 }-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

2015-04-01

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z 0.38) IL is 1-2 nm thick, and is grown after and at the same growth temperature as the 3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a 10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to 0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration.

PubMed

Xu, Zhenzhu; Yu, Yuefeng; Han, Jinglei; Wen, Lei; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

2017-11-09

Both well vertically aligned and uniformly separated (In)GaN nanorods (NRs) were successfully grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Effects of supplied indium (In) flux on the morphology of (In)GaN NRs were investigated systematically. The scanning electron microscopic analysis and transmission electron microscopic measurements revealed that the presence of In flux can help to inhibit NR coalescence and obtain well-separated (In)GaN NRs. By increasing the supplied In flux, the densities of (In)GaN NRs decreased and the axial growth rates increased. According to the energy dispersive X-ray spectrometry measurements and theoretical calculations, the increase of In content of the NRs enhanced Ga diffusion on the NR sidewalls, which resulted in an increased axial growth rate. A kinetic In-assisted growth model for the well-separated (In)GaN NRs is therefore proposed. The model explains that the presence of In flux not only reduces the density of (In)GaN NRs due to the increase in substrate surface migration of Ga adatoms at nucleation stage but also lead to a remarkable enhancement of axial growth rate at growth stage. Consequently, the NR coalescence was significantly suppressed. The results provide a demonstration of obtaining well-separated (In)GaN NRs and open up further possibility of developing (In)GaN NR-based optoelectronic devices.

Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects

NASA Astrophysics Data System (ADS)

Gries, Katharina Ines; Schlechtweg, Julian; Hille, Pascal; Schörmann, Jörg; Eickhoff, Martin; Volz, Kerstin

2017-10-01

Scanning transmission electron microscopy is an extremely useful method to image small features with a size in the range of a few nanometers and below. But it must be taken into account that such images are projections of the sample and do not necessarily represent the real three dimensional structure of the specimen. By applying electron tomography this problem can be overcome. In our work GaN nanowires including InGaN nanodisks were investigated. To reduce the effect of the missing wedge a single nanowire was removed from the underlying silicon substrate using a manipulator needle and attached to a tomography holder. Since this sample exhibits the same thickness of few tens of nanometers in all directions normal to the tilt axis, this procedure allows a sample tilt of ±90°. Reconstruction of the received data reveals a split of the InGaN nanodisks into a horizontal continuation of the (0 0 0 1 bar) central facet and a declined {1 0 1 bar l} facet (with l = -2 or -3).

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Low damage dry etch for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

2015-08-01

We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

NASA Astrophysics Data System (ADS)

Jmerik, V. N.; Kuznetsova, N. V.; Nechaev, D. V.; Shubina, T. V.; Kirilenko, D. A.; Troshkov, S. I.; Davydov, V. Yu.; Smirnov, A. N.; Ivanov, S. V.

2017-11-01

The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (μ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-μm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the μ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 μm equal to that of the substrate patterning profile.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

NASA Astrophysics Data System (ADS)

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo; Wierer, Jonathan J.; Tansu, Nelson

2018-05-01

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ˜4-7 times larger radiative efficiency (pump intensity dependent) at green wavelengths than conventional InGaN/GaN MQWs. This study shows the InGaN-based MQWs with AlInN ILs are capable of achieving superior performance to conventional InGaN MQWs emitting at green wavelengths.

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

NASA Astrophysics Data System (ADS)

Bayram, C.; Shiu, K. T.; Zhu, Y.; Cheng, C. W.; Sadana, D. K.; Teherani, F. H.; Rogers, D. J.; Sandana, V. E.; Bove, P.; Zhang, Y.; Gautier, S.; Cho, C.-Y.; Cicek, E.; Vashaei, Z.; McClintock, R.; Razeghi, M.

2013-03-01

Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

NASA Astrophysics Data System (ADS)

Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Chèze, C.; Siekacz, M.; Wang, X. Q.; Albrecht, M.; Neugebauer, J.

2018-01-01

Nominal InN monolayers grown by molecular beam epitaxy on GaN(0001) are investigated combining in situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and density functional theory (DFT). TEM reveals a chemical intraplane ordering never observed before. Employing DFT, we identify a novel surface stabilization mechanism elastically frustrated rehybridization, which is responsible for the observed chemical ordering. The mechanism also sets an incorporation barrier for indium concentrations above 25% and thus fundamentally limits the indium content in coherently strained layers.

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

NASA Astrophysics Data System (ADS)

Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro

1999-11-01

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

NASA Astrophysics Data System (ADS)

Römer, Friedhard; Deppner, Marcus; Andreev, Zhelio; Kölper, Christopher; Sabathil, Matthias; Strassburg, Martin; Ledig, Johannes; Li, Shunfeng; Waag, Andreas; Witzigmann, Bernd

2012-02-01

We present a computational study on the anisotropic luminescence and the efficiency of a core-shell type nanowire LED based on GaN with InGaN active quantum wells. The physical simulator used for analyzing this device integrates a multidimensional drift-diffusion transport solver and a k . p Schrödinger problem solver for quantization effects and luminescence. The solution of both problems is coupled to achieve self-consistency. Using this solver we investigate the effect of dimensions, design of quantum wells, and current injection on the efficiency and luminescence of the core-shell nanowire LED. The anisotropy of the luminescence and re-absorption is analyzed with respect to the external efficiency of the LED. From the results we derive strategies for design optimization.

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence onmore » the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.« less

Optical properties of InGaN thin films in the entire composition range

NASA Astrophysics Data System (ADS)

Kazazis, S. A.; Papadomanolaki, E.; Androulidaki, M.; Kayambaki, M.; Iliopoulos, E.

2018-03-01

The optical properties of thick InGaN epilayers, with compositions spanning the entire ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) films were grown heteroepitaxially by radio-frequency plasma assisted molecular-beam epitaxy on freestanding GaN substrates. Their emission characteristics were investigated by low temperature photoluminescence spectroscopy, whereas variable angle spectroscopic ellipsometry was applied to determine the complex dielectric function of the films, in the 0.55-4.0 eV photon range. Photoluminescence lines were intense and narrow, in the range of 100 meV for Ga-rich InGaN films (x < 0.3), around 150 meV for mid-range composition films (0.3 < x < 0.6), and in the range of 50 meV for In-rich alloys (x > 0.6). The composition dependence of the strain-free emission energy was expressed by a bowing parameter of b = 2.70 ± 0.12 eV. The films' optical dielectric function dispersion was obtained by the analysis of the ellipsometric data employing a Kramers-Kronig consistent parameterized optical model. The refractive index dispersion was obtained for alloys in the entire composition range, and the corresponding values at the band edge show a parabolic dependence on the InN mole fraction expressed by a bowing parameter of b = 0.81 ± 0.04. The bowing parameter describing the fundamental energy bandgap was deduced to be equal to 1.66 ± 0.07 eV, consistent with the ab initio calculations for statistically random (non-clustered) InGaN alloys.

Surfactant antimony enhanced indium incorporation on InGaN (000 1 bar) surface: A DFT study

NASA Astrophysics Data System (ADS)

Zhang, Yiou; Zhu, Junyi

2016-03-01

InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this paper, we investigated the surfactant effect of Sb on the In incorporation on InGaN (000 1 bar) surface via first-principles approaches. Surface phase diagram was also constructed to determine surface structures under different growth conditions. By analyzing surface stress under different structures, we found that Sb adatom can induce tensile sites in the cation layer, enhancing the In incorporation. These findings may provide fundamental understandings and guidelines for the growth of InGaN with high In concentration.

Structural, electrical and optical characterization of high brightness phosphor-free white light emitting diodes

NASA Astrophysics Data System (ADS)

Omiya, Hiromasa

Much interest currently exists in GaN and related materials for applications such as light-emitting devices operating in the amber to ultraviolet range. Solid-state lighting (SSL) using these materials is widely being investigated worldwide, especially due to their high-energy efficiency and its impact on environmental issues. A new approach for solid-state lighting uses phosphor-free white light emitting diodes (LEDs) that consist of blue, green, and red quantum wells (QW), all in a single device. This approach leads to improved color rendering, and directionality, compared to the conventional white LEDs that use yellow phosphor on blue or ultraviolet emitters. Improving the brightness of these phosphor-free white LEDs should enhance and accelerate the development of SSL technology. The main objective of the research reported in this dissertation is to provide a comprehensive understanding of the nature of the multiple quantum wells used in phosphor-free white LEDs. This dissertation starts with an introduction to lighting history, the fundamental concepts of nitride semiconductors, and the evolution of LED technology. Two important challenges in LED technology today are metal-semiconductor contacts and internal piezoelectric fields present in quantum well structures. Thus, the main portion of this dissertation consists of three parts dealing with metal-semiconductor interfaces, single quantum well structures, and multiple quantum well devices. Gold-nickel alloys are widely used as contacts to the p-region of LEDs. We have performed a detailed study for its evolution under standard annealing steps. The atomic arrangement of gold at its interface with GaN gives a clear explanation for the improved ohmic contact performance. We next focus on the nature of InGaN QWs. The dynamic response of the QWs was studied with electron holography and time-resolved cathodoluminescence. Establishing the correlation between energy band structure and the light emission spectra elucidated the nature of light emission. Finally, we studied a more complex device, consisting of two red, one green, and two blue emitting quantum wells. A correlation between structural, electrical and optical measurements allows us to understand the dynamic performance of this device. The collective results of this dissertation lead to an improved understanding of the performance of high-brightness, phosphor-free, white LEDs.

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Z. L., E-mail: zhilaifang@hotmail.com; Li, Q. F.; Shen, X. Y.

2014-01-28

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhancedmore » interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.« less

Stepped In content growth of InGaN

NASA Astrophysics Data System (ADS)

Kanie, Hisashi; Yoshimura, Takaya

2004-03-01

Although InGaN plays an important role in blue lasers or blue light emitting diodes the characteristic luminescent properties of InGaN is not yet well elucidated. One of them is the double- or multi- peaked luminescent band [1] often observed from the InGaN epilayers. The mechanism is explained by the In content fluctuation or phase separations. We report the observation of the stepped-In-content growth on the facets of InGaN microcrystal under the scanning electron microscope equipped with a highly resolved (50 nm) cathodoluminescent imaging system. InGaN microcrystals were synthesized by nitridation of the mixture of In compound and GaN microcrystals by ammonia. We observed small rectangular crystals emitting at 420 nm with a size of 150-300 x 250-450 nm oriented in the crystallographic direction on a facet emitting at 370 nm. We also observed that a crystal emitting at 460 nm exists in a belt on a facet emitting at 420 nm. Frequency analysis of wavelengths of emission band peak shows 3 peaks at 370, 420, and 450 nm. We think the mechanism of the InGaN growth with a stepped increase in In content is comparable to that of the compositional pulling effect [2] except that the initial nucleus of richer In content InGaN growth is not a endpoint of dislocation that acts as a non-luminescent center. [1] S. Pereira, et.al., Appl. Phys. Lett. 81, 1207 (2002). [2]K. Hiramatsu,et.al. MRS Internet J. Nitride Sem. Res.vl2, article 6.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

NASA Astrophysics Data System (ADS)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

NASA Astrophysics Data System (ADS)

Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

2018-05-01

In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.

MOCVD growth of vertically aligned InGaN nanowires

NASA Astrophysics Data System (ADS)

Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

2013-05-01

In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.

PubMed

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Heilmann, Martin; Yang, Jianfeng; Dai, Xi; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2016-11-23

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

PubMed Central

Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.

2017-01-01

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs. PMID:29156543

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ke, E-mail: ke.wang@chiba-u.jp; Imai, Daichi; Kusakabe, Kazuhide

2016-01-25

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thickmore » and relaxed but defective InGaN for solar cell applications.« less

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

PubMed

Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

2013-03-25

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

Innovatively Continuous Mass Production Couette-taylor Flow: Pure Inorganic Green-Emitting Cs4PbBr6 Perovskite Microcrystal for display technology.

PubMed

Song, Young Hyun; Choi, Seung Hee; Park, Won Kyu; Yoo, Jin Sun; Kwon, Seok Bin; Kang, Bong Kyun; Park, Sang Ryul; Seo, Young Soo; Yang, Woo Seok; Yoon, Dae Ho

2018-01-31

We report for the first time the mass production of Cs 4 PbBr 6 perovskite microcrystal with a Couette-Taylor flow reactor in order to enhance the efficiency of the synthesis reaction. We obtained a pure Cs 4 PbBr 6 perovskite solid within 3 hrs that then realized a high photoluminescence quantum yield (PLQY) of 46%. Furthermore, the Cs 4 PbBr 6 perovskite microcrystal is applied with red emitting K 2 SiF 6 phosphor on a blue-emitting InGaN chip, achieving a high-performance luminescence characteristics of 9.79 lm/W, external quantum efficiency (EQE) of 2.9%, and correlated color temperature (CCT) of 2976 K; therefore, this perovskite is expected to be a promising candidate material for applications in optoelectronic devices.

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Xiaoming; Liu, Junlin, E-mail: liujunlin@ncu.edu.cn; Jiang, Fengyi

2015-10-28

The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery inmore » the injection mechanism of InGaN/GaN MQW LEDs.« less

A Stillinger-Weber Potential for InGaN

DOE PAGES

Zhou, X. W.; Jones, R. E.

2017-09-27

Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compoundmore » configurations. Lastly, this is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende In xGa 1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface.« less

Probing longitudinal modes evolution of a InGaN green laser diode

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsi; Lin, Wei-Chen; Chen, Hong-Zui; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-06-01

This study aims to investigate the longitudinal mode evolution of a InGaN green laser diode. A spectrometer with a 3-pm resolution was employed to obtain the emission spectra of a green laser diode, at a wavelength of around 520 nm, as a function of applied current and temperature. The spectral behavior of the laser modes with applied current was investigated. Right above the lasing threshold, the green diode laser emitted single longitudinal mode output. With increasing applied current, the number of the longitudinal modes increased. Up to ten lasing modes oscillated within the entire gain profile when the applied currents were tuned to 2.2Ith. Subsequently, a multi-Lorentzian profile model was adopted to analyze the spectra and observe how the modes evolved with temperature and applied current.

Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work reports on the morphology and light emission characteristics of ordered InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy. Within the growth temperature range of 750 to 650 Degree-Sign C, the In incorporation can be modified either by the growth temperature, the In/Ga ratio, or the III/V ratio, following different mechanisms. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength and line-shape. Furthermore, yellow-white emission is obtained at room temperature from nanostructures with a composition-graded active InGaN region obtained by temperature gradients during growth.

The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Grudowski, Paul Alexander

Nitride-based light-emitting diodes (LEDs) and laser diodes are important for large-area LED displays, flat-panel displays, traffic signals, and optical data storage, due to their characteristic ultraviolet and visible light emission. However, much of the research and development addressing material related problems is recent. The room-temperature continuous wave (CW) operation of nitride-based laser diodes remains a major milestone because the material quality requirements for these devices are extremely high. This study investigates nitride material development by the metalorganic chemical vapor deposition (MOCVD) and characterization of GaN, AlGaN, and InGaN, and by qualifying these materials with fabricated devices. The ultimate goal was to develop a working laser diode. The nitride epitaxial films were characterized by 300K Hall effect, x-ray diffraction (XRD), photoluminescence (PL), cathodoluminescence (CL), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). GaN grown heteroepitaxially on (0001) sapphire substrates was first optimized. A low-temperature GaN nucleation layer was developed that gave subsequent high-temperature GaN layers with low background carrier concentrations (n < 1×10sp{17}\\ cmsp{-3}). Intentional p-type hole concentrations up to 2× 10sp{18} cmsp{-3} and n-type electron concentrations up to 1× 10sp{19} cmsp{-3} were achieved at 300K with magnesium and silicon, respectively. The ternary alloy Insb{x}Gasb{1-x}N was grown with indium compositions up to x = 0.25. These films exhibited strong and narrow 300K PL bandedge peaks. Multiple-quantum-well structures with Insb{0.13}Gasb{0.87}N wells and Insb{0.03}Gasb{0.97}N barriers were grown and gave enhanced PL intensity compared to single InGaN layers. Modulation-doped MQW's produced enhanced PL intensity compared to uniformly-doped MQW's. 300K photopumping experiments produced stimulated emission from a five-period MQW. Light-emitting device structures comprised of InGaN MQW active regions and p-type and n-type GaN contact layers and AlGaN confinement layers were grown and fabricated. LED's showed bright emission at a wavelength of 400 nm. While optically pumped lasers were demonstrated, no injection lasing action was achieved in these devices. GaN grown by selective area lateral epitaxial overgrowth (SALEO) has reduced dislocation defect density and, therefore, may prove to be a promising substrate for nearly defect-free device structures. Plan-view and cross-sectional CL was used to compare spatial inhomogeneities in the bandedge luminescence.

Photoluminescence studies of high-efficient red-emitting K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphor for NUV LED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xinguo; State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275; Chen, Mengyang

Highlights: • Novel K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} red phosphors were prepared by solid-state method. • Phosphors exhibit strong red light under NUV excitation with quantum efficiency of 70.5 %. • Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. • The red LED prototype was fabricated with KYWP:Eu{sup 3+} phosphor and InGaN chip. - Abstract: A series of high-efficient red-emitting phosphors K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} have been successfully synthesized by conventional solid-state reaction, and its photoluminescence (PL) properties have been investigated. The phosphors can be excited efficiently by NUV light, then exhibit strong redmore » emission with quantum efficiency of 70.5%. The concentration quenching takes place at relatively high concentration of Eu{sup 3+} (x = 0.70), which is further confirmed by the variation of decay curves of the entitled phosphors. Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. The phosphor exhibits good thermal stability (92.5% at 100 °C and 84.1% at 180 °C). The red LED prototype fabricated by opyimized-composition K{sub 2}Y(WO{sub 4})(PO{sub 4}):0.70Eu{sup 3+} phosphor and 395 nm-emitting InGaN chips exhibit bright red emission. The results indicate that the K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphors are promising red phosphors for NUV LED.« less

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zheng, Xiantong; Liang, Hongwei; Wang, Ping; Sun, Xiaoxiao; Chen, Zhaoying; Wang, Tao; Sheng, Bowen; Wang, Yixin; Chen, Ling; Wang, Ding; Rong, Xin; Li, Mo; Zhang, Jian; Wang, Xinqiang

2018-01-01

Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive X-ray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content.

Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Jing; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Liu, Wei; Liang, Feng; Liu, Shuangtao; Xing, Yao; Wang, Wenjie; Li, Mo

2018-02-01

Room-temperature photoluminescence (RT PL) spectra of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition (MOCVD) was investigated. It is found that with increasing In content in GaN barriers, the FWHM and emission intensity decreases, and the emission wavelength is first red shift and then blue shift. The shrinkage of FWHM and emission wavelength blue shift can be attributed to the reduction of piezoelectric field, and the lower height of potential barrier will make carrier confinement weaker and ground state level lower, which resulting in emission intensity decreasing and wavelength red shift. In addition, doping the barrier with In will induce more inhomogeneous and deeper localized states in InGaN QWs, which also contribute to a red shift of PL emission wavelength.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Houqiang; Lu, Zhijian; Zhao, Yuji

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carriermore » lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.« less

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

NASA Astrophysics Data System (ADS)

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Özgür, Ü.; Morkoç, H.

2007-12-01

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN /InGaN HFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during AlGaN growth at high temperatures; and paves the way for better interfaces. An undoped In0.18Al0.82N/AlN/In0.04Ga0.96N HFET structure exhibited a μH=820cm2/Vs, with a ns=2.12×1013cm-2 at room temperature. Moreover, with an In-doped AlGaN barrier, namely, Al0.24In0.01Ga0.75N, grown at 900°C, the μH increased to 1230cm2/Vs with a ns of 1.09×1013cm-2 for a similar InGaN channel. Furthermore, when the barrier was replaced by Al0.25Ga0.75N grown at 1030°C, μH dropped to 870cm2/Vs with ns of 1.26×1013cm-2 at room temperature. Our results suggest that to fully realize the potential of the InGaN channel HFETs, AlInN or AlInGaN should be used as the barrier instead of the conventional AlGaN barrier.

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

NASA Astrophysics Data System (ADS)

Janjua, Bilal; Ng, Tien K.; Zhao, Chao; Anjum, Dalaver H.; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Shen, Chao; Ooi, Boon S.

2017-02-01

White light based on blue laser - YAG: Ce3+ phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm2 with peak output power of 400 μW. A low turn-on voltage of 2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of 39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

InGaN light-emitting diodes with highly transparent ZnO:Ga electrodes

NASA Astrophysics Data System (ADS)

Liu, H. Y.; Li, X.; Ni, X.; Avrutin, V.; Izyumskaya, N.; Özgür, Ü.; Morkoç, H.

2010-03-01

InGaN light-emitting diodes (LEDs) utilizing ZnO layers heavily doped with Ga (GZO) as transparent p-electrodes were fabricated and their characteristics were demonstrated to be superior to those of LEDs with metal Ni/Au electrodes. Highly conductive and highly transparent GZO films were grown on p-GaN contact layers of the LED structures by plasma-assisted molecular beam epitaxy under metal-rich conditions. The c and a lattice constants of GZO were found to be close to the bulk values, indicating small lattice distortion of GZO. The as-grown GZO films showed resistivities as low as 2.2-2.9×10-4 Ω cm. Upon rapid thermal annealing at the optimum temperature of 675 °C, the resistivity decreased reaching a value of ~1.9×10-4 Ω cm. Unlike the LEDs with Ni/Au contacts, the LEDs with GZO electrodes showed no filamentation and very uniform light emission at high current densities. The peak value of the relative external quantum efficiency for the LEDs with GZO contacts has substantial improvement compared with that for the LEDs with Ni/Au contacts. Under pulsed excitation mode, GZO-LEDs withstood current densities up to 5000 A/cm2.

Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

NASA Astrophysics Data System (ADS)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

NASA Astrophysics Data System (ADS)

Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

2016-11-01

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V

2013-05-31

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible tomore » use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)« less

Far-field coupling in nanobeam photonic crystal cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rousseau, Ian, E-mail: ian.rousseau@epfl.ch; Sánchez-Arribas, Irene; Carlin, Jean-François

2016-05-16

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal period, we showed using three-dimensional finite-difference time-domain simulations that the intensity extracted to the far-field could be improved by more than three orders of magnitude compared to the unmodified ideal cavity geometry. We then experimentally studied the evolution of the quality factor and far-field intensity as a function of cross-grating coupler amplitude. High quality factor (>4000) blue (λ = 455 nm) nanobeam photonic crystals were fabricated out ofmore » GaN thin films on silicon incorporating a single InGaN quantum well gain medium. Micro-photoluminescence spectroscopy of sets of twelve identical nanobeams revealed a nine-fold average increase in integrated far-field emission intensity and no change in average quality factor for the optimized structure compared to the unmodulated reference. These results are useful for research environments and future nanophotonic light-emitting applications where vertical in- and out-coupling of light to nanocavities is required.« less

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2012-03-06

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

DTIC Science & Technology

2009-02-19

magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the...magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the...successful compositional patterning of InGaN using in situ digital micromirror device (DMD) patterning of ultraviolet (UV

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhaoying; Zheng, Xiantong; Li, Zhilong

2016-08-08

We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.

Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

NASA Astrophysics Data System (ADS)

Philipps, Jan M.; Hölzel, Sara; Hille, Pascal; Schörmann, Jörg; Chatterjee, Sangam; Buyanova, Irina A.; Eickhoff, Martin; Hofmann, Detlev M.

2018-05-01

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In)GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

NASA Astrophysics Data System (ADS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-07-27

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method

NASA Astrophysics Data System (ADS)

Xue, Junjun; Cai, Qing; Zhang, Baohua; Ge, Mei; Chen, Dunjun; Zheng, Jianguo; Zhi, Ting; Tao, Zhikuo; Chen, Jiangwei; Wang, Lianhui; Zhang, Rong; Zheng, Youdou

2017-11-01

Incubation and shape transition are considered as two essential processes for nucleating of self-assembly InGaN nanocolumns (NCs) in traditional way. We propose a new approach for nuclei forming directly by in-situ annealing and ion irradiating the InGaN template during growing process. The nanoislands, considered as the nuclei of NCs, were formed by a combinational effect of thermal and ion etching (TIE), which made the gaps of the V-pits deeper and wider. On account of the decomposition of InGaN during TIE process, more nitride-rich amorphous alloys would intent to accumulate in the corroded V-pits. The amorphous alloys played a key role to promote the following growth from 2D regime into Volmer-Weber growth regime so that the NC morphology took place, rather than a compact film. As growth continued, the subsequently epitaxial InGaN alloys on the annealed NC nuclei were suffered in biaxial compressive stress for losing part of indium content from the NC nuclei during the TIE process. Strain relaxation, accompanied by thread dislocations, came up and made the lattice planes misoriented, which prevented the NCs from coalescence into a compact film at later period of growing.

X-ray probe of GaN thin films grown on InGaN compliant substrates

NASA Astrophysics Data System (ADS)

Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua

2013-04-01

GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication.

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

InGaN High-Temperature Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Starikov, David

2015-01-01

This Phase II project developed Indium-Gallium-Nitride (InGaN) photovoltaic cells for high-temperature and high-radiation environments. The project included theoretical and experimental refinement of device structures produced in Phase I as well as modeling and optimization of solar cell device processing. The devices have been tested under concentrated air mass zero (AM0) sunlight, at temperatures from 100 degC to 250 degC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high-temperature and high-radiation solar cells. The large commercial solar cell market could benefit from the hybridization of InGaN materials to existing solar cell technology, which would significantly increase cell efficiency without relying on highly toxic compounds. In addition, further development of this technology to even lower bandgap materials for space applications would extend lifetimes of satellite solar cell arrays due to increased radiation hardness. This could be of importance to the Departmentof Defense (DoD) and commercial satellite manufacturers.

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

NASA Astrophysics Data System (ADS)

Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

2010-11-01

The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy

NASA Astrophysics Data System (ADS)

Nami, Mohsen; Eller, Rhett F.; Okur, Serdal; Rishinaramangalam, Ashwin K.; Liu, Sheng; Brener, Igal; Feezell, Daniel F.

2017-01-01

Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and photoluminescence properties of GaN/InGaN core-shell nanowire arrays. The nanowires are grown on c-plane sapphire substrates using pulsed-mode metal organic chemical vapor deposition. By varying the dielectric mask configuration and growth conditions, we achieve GaN nanowire cores with diameters ranging from 80 to 700 nm that exhibit various degrees of polar, semipolar, and nonpolar faceting. A single InGaN quantum well (QW) and GaN barrier shell is also grown on the GaN nanowire cores and micro-photoluminescence is obtained and analyzed for a variety of nanowire dimensions, array pitch spacings, and aperture diameters. By increasing the nanowire pitch spacing on the same growth wafer, the emission wavelength redshifts from 440 to 520 nm, while increasing the aperture diameter results in a ˜35 nm blueshift. The thickness of one QW/barrier period as a function of pitch and aperture diameter is inferred using scanning electron microscopy, with larger pitches showing significantly thicker QWs. Significant increases in indium composition were predicted for larger pitches and smaller aperture diameters. The results are interpreted in terms of local growth conditions and adatom capture radius around the nanowires. This work provides significant insight into the effects of mask configuration and growth conditions on the nanowire properties and is applicable to the engineering of monolithic multi-color nanowire LEDs on a single chip.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing

2015-06-08

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

Ring resonator optical modes in InGaN/GaN structures grown on micro-cone-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Kazanov, D. R.; Pozina, G.; Jmerik, V. N.; Shubina, T. V.

2018-03-01

Molecular beam epitaxy (MBE) of III-nitride compounds on specially prepared cone-shaped patterned substrates is being actively developed nowadays, especially for nanophotonic applications. This type of substrates enables the successful growth of hexagonal nanorods (NRs). The insertion of an active quantum-sized region of InGaN inside a GaN NR allows us to enhance the rate of optical transitions by coupling them with resonant optical modes in the NR. However, we have observed the enhancement of emission not only from the NR but also around the circumference region of the cone-shaped base. We have studied this specific feature and demonstrated its impact on the output signal.

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presa, S., E-mail: silvino.presa@tyndall.ie; School of Engineering, University College Cork, Cork; Maaskant, P. P.

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thickermore » barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.« less

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

PubMed

Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

2016-08-24

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

PubMed Central

Du, Chunhua; Huang, Xin; Jiang, Chunyan; Pu, Xiong; Zhao, Zhenfu; Jing, Liang; Hu, Weiguo; Wang, Zhong Lin

2016-01-01

In recent years, visible light communication (VLC) technology has attracted intensive attention due to its huge potential in superior processing ability and fast data transmission. The transmission rate relies on the modulation bandwidth, which is predominantly determined by the minority-carrier lifetime in III-group nitride semiconductors. In this paper, the carrier dynamic process under a stress field was studied for the first time, and the carrier recombination lifetime was calculated within the framework of quantum perturbation theory. Owing to the intrinsic strain due to the lattice mismatch between InGaN and GaN, the wave functions for the holes and electrons are misaligned in an InGaN/GaN device. By applying an external strain that “cancels” the internal strain, the overlap between the wave functions can be maximized so that the lifetime of the carrier is greatly reduced. As a result, the maximum speed of a single chip was increased from 54 MHz up to 117 MHz in a blue LED chip under 0.14% compressive strain. Finally, a bandwidth contour plot depending on the stress and operating wavelength was calculated to guide VLC chip design and stress optimization. PMID:27841368

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding whitemore » emission.« less

Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

NASA Astrophysics Data System (ADS)

Nechaev, D. V.; Semenov, A. N.; Koshelev, O. A.; Jmerik, V. N.; Davydov, V. Yu; Smirnov, A. N.; Pozina, G.; Shubina, T. V.; Ivanov, S. V.

2017-11-01

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (μ-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Microcathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Maur, Matthias Auf der; Carlo, Aldo di; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Sakharov, Alexei V; Lundin, Wsevolod V; Nikolaev, Andrei E; Usov, Sergey O; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-01-06

The impact of electromechanical coupling on optical properties of light-emitting diodes (LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical simulations. The structure, i.e. the shape and the average In content of the QDs, has been directly derived from experimental data on out-of-plane strain distribution obtained from the geometric-phase analysis of a high-resolution transmission electron microscopy image of an LED structure grown by metalorganic vapor-phase epitaxy. Using continuum [Formula: see text] calculations, we have studied first the lateral and full electromechanical coupling between the QDs in the active region and its impact on the emission spectrum of a single QD located in the center of the region. Our simulations demonstrate the spectrum to be weakly affected by the coupling despite the strong common strain field induced in the QD active region. Then we analyzed the effect of vertical coupling between vertically stacked QDs as a function of the interdot distance. We have found that QCSE gives rise to a blue-shift of the overall emission spectrum when the interdot distance becomes small enough. Finally, we compared the theoretical spectrum obtained from simulation of the entire active region with an experimental electroluminescence (EL) spectrum. While the theoretical peak emission wavelength of the selected central QD corresponded well to that of the EL spectrum, the width of the latter one was determined by the scatter in the structures of various QDs located in the active region. Good agreement between the simulations and experiment achieved as a whole validates our model based on realistic structure of the QD active region and demonstrates advantages of the applied approach.

Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy

NASA Astrophysics Data System (ADS)

Juday, Reid

The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on nanoindented ZnO crystals. Bulk, single crystal ZnO was indented using a sub-micron spherical diamond tip on various surface orientations. The resistance to deformation (the "hardness") of each surface orientation was measured, with the c-plane being the most resistive. This is due to the orientation of the easy glide planes, the c-planes, being positioned perpendicularly to the applied load. The a-plane oriented crystal is the least resistive to deformation. Cathodoluminescence imaging allows for the correlation of the luminescence with the regions located near the indentation. Sub-nanometer shifts in the band edge emission have been assigned to residual strain the crystals. The a- and m-plane oriented crystals show two-fold symmetry with regions of compressive and tensile strain located parallel and perpendicular to the +/- c-directions, respectively. The c-plane oriented crystal shows six-fold symmetry with regions of tensile strain extending along the six equivalent a-directions.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

Confinement factor, near and far field patterns in InGaN MQW laser diodes

NASA Astrophysics Data System (ADS)

Martín, J.; Sánchez, M.

2005-07-01

In this work the influence of the QW number in the active region on spectral characteristics in InGaN multi quamtun well lasers is analyzed. A comparison between the abrupt index step structure (Step) and a graded-index structure (GRIN) is done. The effect of the introduction of a p-AlxGa1-xN electron blocking layer, placed above the last InGaN barrier in the Step structure is also analyzed. Calculations of the confinement factor, near and far field patterns were carried out. We found that with the adequate aluminum content in this layer, the confinement factor, near and far field patterns are improved, and values similar to those obtained with GRIN structure can be reached.

Impact of surface morphology on the properties of light emission in InGaN epilayers

NASA Astrophysics Data System (ADS)

Kristijonas Uždavinys, Tomas; Marcinkevičius, Saulius; Mensi, Mounir; Lahourcade, Lise; Carlin, Jean-François; Martin, Denis; Butté, Raphaël; Grandjean, Nicolas

2018-05-01

Scanning near-field optical microscopy was used to study the influence of the surface morphology on the properties of light emission and alloy composition in InGaN epitaxial layers grown on GaN substrates. A strong correlation between the maps of the photoluminescence (PL) peak energy and the gradient of the surface morphology was observed. This correlation demonstrates that the In incorporation strongly depends on the geometry of the monolayer step edges that form during growth in the step-flow mode. The spatial distribution of nonradiative recombination centers — evaluated from PL intensity maps — was found to strongly anticorrelate with the local content of In atoms in the InGaN alloy.

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.

The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

Material Science for High-Efficiency Photovoltaics: From Advanced Optical Coatings to Cell Design for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Perl, Emmett Edward

Solar cells based on III-V compound semiconductors are ideally suited to convert solar energy into electricity. The highest efficiency single-junction solar cells are made of gallium arsenide, and have attained an efficiency of 28.8%. Multiple III-V materials can be combined to construct multijunction solar cells, which have reached record efficiencies greater than 45% under concentration. III-V solar cells are also well suited to operate efficiently at elevated temperatures, due in large part to their high material quality. These properties make III-V solar cells an excellent choice for use in concentrator systems. Concentrator photovoltaic systems have attained module efficiencies that exceed 40%, and have the potential to reach the lowest levelized cost of electricity in sunny places like the desert southwest. Hybrid photovoltaic-thermal solar energy systems can utilize high-temperature III-V solar cells to simultaneously achieve dispatchability and a high sunlight-to-electricity efficiency. This dissertation explores material science to advance the state of III-V multijunction solar cells for use in concentrator photovoltaic and hybrid photovoltaic-thermal solar energy systems. The first half of this dissertation describes work on advanced optical designs to improve the efficiency of multijunction solar cells. As multijunction solar cells move to configurations with four or more subcells, they utilize a larger portion of the solar spectrum. Broadband antireflection coatings are essential to realizing efficiency gains for these state-of-the-art cells. A hybrid design consisting of antireflective nanostructures placed on top of multilayer interference-based optical coatings is developed. Antireflection coatings that utilize this hybrid approach yield unparalleled performance, minimizing reflection losses to just 0.2% on sapphire and 0.6% on gallium nitride for 300-1800nm light. Dichroic mirrors are developed for bonded 5-junction solar cells that utilize InGaN as a top junction. These designs maximize reflection of high-energy light for an InGaN top junction while minimizing reflection of low-energy light that would be absorbed by the lower four junctions. Increasing the reflectivity of high-energy photons enables a second pass of light through the InGaN cell, leading to increased absorption and a higher photocurrent. These optical designs enhanced the efficiency of a 2.65eV InGaN solar cell to a value of 3.3% under the AM0 spectrum, the highest reported efficiency for a standalone InGaN solar cell. The second half of the dissertation describes the development of III-V solar cells for high-temperature applications. As the operating temperature of a solar cell is increased, the ideal bandgap of the top junction increases. AlGaInP solar cells with bandgaps ranging from 1.9eV to 2.2eV are developed. A 2.03eV AlGaInP solar cell is demonstrated with a bandgap-voltage offset of 440mV, the lowest of any AlGaInP solar cell reported to date. Single-junction AlGaInP, GaInP, and GaAs solar cells designed for high-temperature operation are characterized up to a temperature of 400°C. The cell properties are compared to an analytical drift-diffusion model, and we find that a fundamental increase in the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. These findings provide a valuable guide to the design of any system that requires high-temperature solar cell operation.

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

PubMed

Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

2015-04-06

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

NASA Astrophysics Data System (ADS)

Bae, Sung Geun; Jeon, Injun; Jeon, Hunsoo; Kim, Kyoung Hwa; Yang, Min; Yi, Sam Nyung; Lee, Jae Hak; Ahn, Hyung Soo; Yu, Young Moon; Sawaki, Nobuhiko; Kim, Suck-Whan

2018-01-01

We prepared InGaN light-emitting diodes (LEDs) with the active layers grown from a mixed source of Ga-In-N materials on an n-type GaN substrate by a selective-area growth method and three fabrication steps: photolithography, epitaxial layer growth, and metallization. The preparation followed a previously developed experimental process using apparatus for mixed-source hydride vapor-phase epitaxy (HVPE), which consisted of a multi-graphite boat, for insulating against the high temperature and to control the growth rate of epilayers, filled with the mixed source on the inside and a radio-frequency (RF) heating coil for heating to a high temperature (T > 900 °C) and for easy control of temperature outside the source zone. Two types of LEDs were prepared, with In compositions of 11.0 and 6.0% in the InGaN active layer, and room-temperature electroluminescence measurements exhibited a main peak corresponding to the In composition at either 420 or 390 nm. The consecutive growth of InGaN LEDs by the mixed-source HVPE method provides a technique for the production of LEDs with a wide range of In compositions in the active layer.

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma

2015-03-15

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys,more » which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.« less

InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

NASA Astrophysics Data System (ADS)

Gherasoiu, I.; Yu, K. M.; Reichertz, L.; Walukiewicz, W.

2015-09-01

PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

Comparison of as-grown and annealed GaN/InGaN : Mg samples

NASA Astrophysics Data System (ADS)

Deng, Qingwen; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Lin, Defeng; Jiang, Lijuan; Feng, Chun; Li, Jinmin; Wang, Zhanguo; Hou, Xun

2011-08-01

Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7 K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N2 ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.

Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures

NASA Astrophysics Data System (ADS)

Sizov, Dmitry; Bhat, Rajaram; Zah, Chung-en

2013-05-01

We studied optical absorption of Mg-doped AlInGaN layers using excitation-position dependent and polarization resolved photoluminescence from the slab-waveguide edge of a laser structure. The major absorption in the Mg-doped layers was found only when p-doping is activated. It increases with the removal of residual hydrogen, which in case of Mg doping is a p-type passivation impurity, and reversibly disappears after passivation by hydrogen. This absorption is weakly wavelength and temperature dependent, and isotropic. This can be attributed to acceptor-bound hole absorption, because those holes concentration is nearly equal to that of activated acceptors and weakly temperature dependent (unlike the free hole concentration, which is much lower and is an exponential function of temperature due to high ionization energy). The cross section of photon absorption on such activated acceptor was quantified to be in the order of 10-17 cm-2. The absorption cross section of free electrons was found to be at least one order of magnitude lower and below detection limit. The same technique was used to experimentally quantify band structure polarization components along basis directions for green InGaN quantum wells (QWs) grown on c- and semipolar planes. The A1 and B1 valence subbands of c-plane QW were found to comprise mostly |X⟩ and |Y⟩ states. There was rather minor amount of |Z⟩ states with average square fraction of only 0.02. In (20-21) plane, due to small band anticrossing near gamma-point, we observed highly polarized absorption edges of A1- and B1-subbands consisting mainly of |Y⟩ and |X⟩ states, respectively, and found their energy splitting to be ˜40 meV. For (11-22) plane with smaller band splitting and polarization, we observed polarization switching with indium (In) concentration greater than 30% in the QW (or photon energy less than 2.3 eV). We confirmed our study of valence band structures by optical gain measurements.

Photoelectrochemical studies of InGaN/GaN MQW photoanodes

NASA Astrophysics Data System (ADS)

Butson, Joshua; Reddy Narangari, Parvathala; Krishna Karuturi, Siva; Yew, Rowena; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

2018-01-01

The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

DOE PAGES

Young, E. C.; Grandjean, N.; Mates, T. E.; ...

2016-11-23

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It has been found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ~10 12 cm -2, which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperaturemore » is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10 18 cm -3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.« less

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Modeling and Simulation of III-Nitride-Based Solar Cells using NextnanoRTM

NASA Astrophysics Data System (ADS)

Refaei, Malak

Nextnano3 software is a well-known package for simulating semiconductor band-structures at the nanoscale and predicting the general electronic structure. In this work, it is further demonstrated as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as well as the results of the drift-diffusion equations because it is a well-known material in both software tools. After substantiating the capabilities of Nextnano3 for the simulation solar cells, an InGaN single-junction solar cell was simulated. The effects of various indium compositions and device structures on the performance of this InGaN p-n homojunction solar cell was then investigated using Nextnano 3 as a simulation tool. For single-junction devices with varying bandgap, an In0.6Ga0.4N device with a bandgap of 1.44 eV was found to be the optimum. The results of this research demonstrate that the Nextnano3 software can be used to usefully simulate solar cells in general, and III-nitride solar cells specifically, for future study of nanoscale structured devices.

Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes

NASA Astrophysics Data System (ADS)

Vaskuri, Anna; Kärhä, Petri; Baumgartner, Hans; Kantamaa, Olli; Pulli, Tomi; Poikonen, Tuomas; Ikonen, Erkki

2018-04-01

We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN light-emitting diodes (LEDs) consisting of the Maxwell-Boltzmann distribution and the effective joint density of states. One spectrum at a known temperature for one LED specimen is needed for calibrating the model parameters of each LED type. Then, the model can be used for determining the junction temperature optically from the spectral measurement, because the junction temperature is one of the free parameters. We validated the models using, in total, 53 spectra of three red AlGaInP LED specimens and 72 spectra of three blue InGaN LED specimens measured at various current levels and temperatures between 303 K and 398 K. For all the spectra of red LEDs, the standard deviation between the modelled and measured junction temperatures was only 2.4 K. InGaN LEDs have a more complex effective joint density of states. For the blue LEDs, the corresponding standard deviation was 11.2 K, but it decreased to 3.5 K when each LED specimen was calibrated separately. The method of determining junction temperature was further tested on white InGaN LEDs with luminophore coating and LED lamps. The average standard deviation was 8 K for white InGaN LED types. We have six years of ageing data available for a set of LED lamps and we estimated the junction temperatures of these lamps with respect to their ageing times. It was found that the LEDs operating at higher junction temperatures were frequently more damaged.

Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In,Ga)N/GaN rod light-emitting diodes.

PubMed

Krause, Thilo; Hanke, Michael; Cheng, Zongzhe; Niehle, Michael; Trampert, Achim; Rosenthal, Martin; Burghammer, Manfred; Ledig, Johannes; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-Heinrich; Waag, Andreas

2016-08-12

Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core-shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able to distinguish between individual m-facets and to detect a significant in-plane strain gradient along the rod height. This gradient translates to a red-shift in the emitted wavelength revealed by spatially resolved cathodoluminescence measurements. We interpret the result in terms of numerically derived in-plane strain using the finite element method and subsequent kinematic scattering simulations which show that the driving parameter for this effect is an increasing indium content towards the rod tip.

Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In,Ga)N/GaN rod light-emitting diodes

NASA Astrophysics Data System (ADS)

Krause, Thilo; Hanke, Michael; Cheng, Zongzhe; Niehle, Michael; Trampert, Achim; Rosenthal, Martin; Burghammer, Manfred; Ledig, Johannes; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-Heinrich; Waag, Andreas

2016-08-01

Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core-shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able to distinguish between individual m-facets and to detect a significant in-plane strain gradient along the rod height. This gradient translates to a red-shift in the emitted wavelength revealed by spatially resolved cathodoluminescence measurements. We interpret the result in terms of numerically derived in-plane strain using the finite element method and subsequent kinematic scattering simulations which show that the driving parameter for this effect is an increasing indium content towards the rod tip.

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennig, J., E-mail: jonas.hennig@ovgu.de; Dadgar, A.; Witte, H.

2015-07-15

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices.more » Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.« less

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazioti, C.; Kehagias, Th.; Pavlidou, E.

2015-10-21

We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults andmore » threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.« less

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown tomore » be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.« less

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

NASA Astrophysics Data System (ADS)

Mori, Takuma; Egawa, Takashi; Miyoshi, Makoto

2017-08-01

We conducted the study on the growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well (MQW) structures by metalorganic chemical vapor deposition (MOCVD). It was found that the sum of InGaN well thickness t well_total was a predominant factor to form the rough surface, in addition to the growth temperature as low as 800 °C for the p-GaN layers. Microstructure analyses revealed that the rough surfaces consisted of a certain number of hexagonal V-shaped pits starting from dislocations propagated through an under layer and they increased with the increased t well_total. It was confirmed that the light absorption was enlarged for MQW structure samples with rough-surface p-GaN layers on the top, owing to not only the thickness effect in MQWs but also their reduced light reflection on the surfaces. It was also confirmed that these optical properties contributed to the performance improvement in InGaN/GaN MQW solar cells.

Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

2010-02-01

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuo; Ma, Ping, E-mail: maping@semi.ac.cn; Liu, Boting

2016-06-15

High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation ofmore » indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.« less

Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

NASA Astrophysics Data System (ADS)

Lai, Kun-Yu

Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hong-Ru; Wang, Shih-Yin; Ou, Sin-Liang

The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm{sup 2}/V s when the electrons passed through the n-GaN and themore » patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.« less

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

NASA Technical Reports Server (NTRS)

Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

2012-01-01

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same

DOEpatents

Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist

2013-11-19

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Enhanced polarization of (11-22) semi-polar InGaN nanorod array structure

NASA Astrophysics Data System (ADS)

Athanasiou, M.; Smith, R. M.; Hou, Y.; Zhang, Y.; Gong, Y.; Wang, T.

2015-10-01

By means of a cost effective nanosphere lithography technique, an InGaN/GaN multiple quantum well structure grown on (11-22) semipolar GaN has been fabricated into two dimensional nanorod arrays which form a photonic crystal (PhC) structure. Such a PhC structure demonstrates not only significantly increased emission intensity, but also an enhanced polarization ratio of the emission. This is due to an effective inhibition of the emission in slab modes and then redistribution to the vertical direction, thus minimizing the light scattering processes that lead to randomizing of the optical polarization. The PhC structure is designed based on a standard finite-difference-time-domain simulation, and then optically confirmed by detailed time-resolved photoluminescence measurements. The results presented pave the way for the fabrication of semipolar InGaN/GaN based emitters with both high efficiency and highly polarized emission.

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

NASA Astrophysics Data System (ADS)

Zhao, Guijuan; Wang, Lianshan; Li, Huijie; Meng, Yulin; Li, Fangzheng; Yang, Shaoyan; Wang, Zhanguo

2018-01-01

Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.

Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1 nm and a InGaN laser diode at 444 nm.

PubMed

Xu, B; Starecki, F; Pabœuf, D; Camy, P; Doualan, J L; Cai, Z P; Braud, A; Moncorgé, R; Goldner, Ph; Bretenaker, F

2013-03-11

We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At this pump wavelength, red and orange laser emissions are obtained at about 642.3 and 605.5 nm, with maximum output powers of 11.3 and 1 mW and associated slope efficiencies of 9.3% and 3.4%, with respect to absorbed pump powers, respectively. For comparison, the Pr:KYF(4) crystal is also pumped by a InGaN blue laser diode operating around 444 nm. In this case, the same red and orange lasers are obtained, but with maximum output powers of 7.8 and 2 mW and the associated slope efficiencies of 7 and 5.8%, respectively. Wavelength tuning for the two lasers is demonstrated by slightly tilting the crystal. Orange laser operation and laser wavelength tuning are reported for the first time.

N-Face GaN Electronics for Heteroepitaxial and Bonded Structures

DTIC Science & Technology

2015-08-27

GaN ! ?" InGaAs’Channel’ InAlAs’ !!!!!S! !!!!!!D! !!!!G! Ga (In)N’Dri2 ’Region! Wafer* Bonded! Junc2on! !!!!!S...Gate InGaAs InAlAs (In, Ga )N Source GaN on Sapphire Aperture CBL WBI InGaN n-InGaAs InAlAs n+ GaN S D WBI...about. Polarization effects at the interface may need to be considered. For Ga -polar InGaN- GaN homojunctions,

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

DOE PAGES

Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; ...

2014-10-22

We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale,more » and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.« less

Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

NASA Astrophysics Data System (ADS)

Hoshino, Tomoki; Mori, Nobuya

2018-04-01

InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

Comparative study of (0001) and (11\\bar{2}2) InGaN based light emitting diodes

NASA Astrophysics Data System (ADS)

Pristovsek, Markus; Humphreys, Colin J.; Bauer, Sebastian; Knab, Manuel; Thonke, Klaus; Kozlowski, Grzegorz; O'Mahony, Donagh; Maaskant, Pleun; Corbett, Brian

2016-05-01

We have systematically investigated the doping of (11\\bar{2}2) with Si and Mg by metal-organic vapour phase epitaxy for light emitting diodes (LEDs). By Si doping of GaN we reached electron concentrations close to 1020 cm-3, but the topography degrades above mid 1019 cm-3. By Mg doping we reached hole concentrations close to 5 × 1017 cm-3, using Mg partial pressures about 3× higher than those for (0001). Exceeding the maximum Mg partial pressure led to a quick degradation of the sample. Low resistivities as well as high hole concentrations required a growth temperature of 900 °C or higher. At optimised conditions the electrical properties as well as the photoluminescence of (11\\bar{2}2) p-GaN were similar to (0001) p-GaN. The best ohmic p-contacts were achieved by NiAg metallisation. A single quantum well LED emitting at 465 nm was realised on (0001) and (11\\bar{2}2). Droop (sub-linear increase of the light output power) occurred at much higher current densities on (11\\bar{2}2). However, the light output of the (0001) LED was higher than that of (11\\bar{2}2) until deep in the droop regime. Our LEDs as well as those in the literature indicate a reduction in efficiency from (0001) over semi-polar to non-polar orientations. We propose that reduced fields open a loss channel for carriers.

High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters

DTIC Science & Technology

2010-02-01

conditions. The TMI and trimethylgallium ( TMG ) precursors are injected simultaneously c) growth surface response via PARS signal The link between...ternary or quaternary alloys such as InGaN or InGaAlN is illustrated in Fig. 10. Here, the injection of the metal precursors, TMI and TMG , are separated...digital InGaN alloy formation, for the control of phase segregations, as well as to adjust the injection parameter to the different TMI and TMG growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Wu, Shudong; Xia, Changquan

In this work, graded barrier InGaN light-emitting diodes with increasing indium composition barriers are proposed and investigated numerically. When the conventional GaN barriers are replaced by this unique graded InGaN barrier design, the forward voltage at 100 mA is reduced from 3.32 V to 3.27 V, and the efficiency droop is improved from 46.6% to 7.5%. The simulation results observed in this work indicate that these improvements can be attributed to increased electron confinement and enhanced hole injection efficiency caused by the modified energy band diagram.

Photon correlation study of background suppressed single InGaN nanocolumns

NASA Astrophysics Data System (ADS)

Yamamoto, Takatoshi; Maekawa, Michiru; Imanishi, Yusuke; Ishizawa, Shunsuke; Nakaoka, Toshihiro; Kishino, Katsumi

2016-04-01

We report on a linearly polarized non-classical light emission from a single InGaN/GaN nanocolumn, which is a site-controlled nanostructure allowing for pixel-like large-scale integration. We have developed a shadow mask technique to reduce background emissions arising from nitride deposits around single nanocolumns and defect states of GaN. The signal to background ratio is improved from 0.5:1 to 10:1, which allows for detailed polarization-dependent measurement and photon-correlation measurements. Polarization-dependent measurements show that linearly polarized emissions arise from excitonic recombination involving a heavy-hole-like electronic state, corresponding to the bulk exciton of an in-plane polarized A exciton. The second-order coherence function at time zero g (2)(0) is 0.52 at 20 K without background correction. This value is explained in terms of a statistical mixture of a single-photon emission with residual weak background emissions, as well as efficient carrier injection from other localized states.

Effect of graded InGaN drain region and 'In' fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Duan, Xiaoling; Zhang, Jincheng; Wang, Shulong; Quan, Rudai; Hao, Yue

2017-12-01

An InGaN-based graded drain region tunnel field-effect transistor (GD-TFET) is proposed to suppress the ambipolar behavior. The simulation results with the trade-off between on-state current (Ion) and ambipolar current (Iambipolar) show decreased Iambipolar (1.9 × 10-14 A/μm) in comparison with that of conventional TFETs (2.0 × 10-8 A/μm). Furthermore, GD-TFET with high 'In' fraction InxGa1-xN source-side channel (SC- GD-TFET) is explored and exhibits 5.3 times Ion improvement and 60% average subthreshold swing (SSavg) reduction in comparison with GD-TFET by adjusting 'In' fraction in the InxGa1-xN source-side channel. The improvement is attributed to the confinement of BTBT in the source-side channel by the heterojunction. And then, the optimum value for source-side channel length (Lsc) is researched by DC performances results, which shows it falls into the range between Lsc = 10 nm and 20 nm.

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc.

PubMed

Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

2016-01-01

The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. © Wiley Periodicals, Inc.

Growth and Characterization Studies of InGaN for Optoelectronics, Electronics and Photovoltaic Applications

DTIC Science & Technology

2007-12-04

emitting diodes 6. Optical and material characterization of ZnO nanostructures 7. Fabrication of anodized - aluminum - oxide ( AAO ) ? preparing for patterned...Using InGaN for improving the efficiency of solar cell Theme: MOCVD and MBE growths of nitride and oxide semiconductor nanostructures for energy...0 20 40 60 80 100 120 P L E n h a n c e m e n t R a t i o Wavelength (nm) Silver -- 13X Gold --4X Aluminum -- 10X 0.0 0.5 1.0 1.5 2.0 2.5 I n

Fabrication and structural studies of opal-III nitride nanocomposites

NASA Astrophysics Data System (ADS)

Davydov, V. Yu; Golubev, V. G.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Brogueira, P.; Schwarz, R.

2000-12-01

In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

NASA Astrophysics Data System (ADS)

Erhard, N.; Sarwar, A. T. M. Golam; Yang, F.; McComb, D. W.; Myers, R. C.; Holleitner, A. W.

2015-01-01

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

MOCVD growth and study of thin films of indium nitride

NASA Astrophysics Data System (ADS)

Jain, Abhishek

This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in surface morphology obtained with growth of N-polar InN, delamination at the InN/GaN interface was still observed in these films, and was also present in In-polar InN samples. Attempts were made to further reduce the lattice mismatch and improve the adhesion between InN and GaN by using a compositionally graded InGaN buffer layer. The fabrication of InGaN over its entire composition range is challenging since the optimal growth parameters window for InGaN varies with composition and film quality is strongly dependent on temperature and precursor flow rates. The structural properties of the InN films grown on the graded InGaN layers were comparable to films grown directly on GaN, however, the film adhesion was significantly improved with no evidence of interfacial cracks between the InN and GaN. These preliminary results indicate that graded InGaN layers can be used to improve the adhesion of InN on both Ga-polar and N-polar GaN, however, further work is needed to develop graded InGaN buffer layers or constant composition InGaN interlayers with improved structural properties for InN growth. (Abstract shortened by UMI.)

Insights into Interfacial Changes and Photoelectrochemical Stability of In(x)Ga(1-x)N (0001) Photoanode Surfaces in Liquid Environments.

PubMed

Caccamo, Lorenzo; Cocco, Giulio; Martín, Gemma; Zhou, Hao; Fundling, Sönke; Gad, Alaaeldin; Mohajerani, Matin Sadat; Abdelfatah, Mahmoud; Estradé, Sonia; Peiró, Francesca; Dziony, Wanja; Bremers, Heiko; Hangleiter, Andreas; Mayrhofer, Leonhard; Lilienkamp, Gerhard; Moseler, Michael; Daum, Winfried; Waag, Andreas

2016-03-01

The long-term stability of InGaN photoanodes in liquid environments is an essential requirement for their use in photoelectrochemistry. In this paper, we investigate the relationships between the compositional changes at the surface of n-type In(x)Ga(1-x)N (x ∼ 0.10) and its photoelectrochemical stability in phosphate buffer solutions with pH 7.4 and 11.3. Surface analyses reveal that InGaN undergoes oxidation under photoelectrochemical operation conditions (i.e., under solar light illumination and constant bias of 0.5 VRHE), forming a thin amorphous oxide layer having a pH-dependent chemical composition. We found that the formed oxide is mainly composed of Ga-O bonds at pH 7.4, whereas at pH 11.3 the In-O bonds are dominant. The photoelectrical properties of InGaN photoanodes are intimately related to the chemical composition of their surface oxides. For instance, after the formation of the oxide layer (mainly Ga-O bonds) at pH 7.4, no photocurrent flow was observed, whereas the oxide layer (mainly In-O bonds) at pH 11.3 contributes to enhance the photocurrent, possibly because of its reported high photocatalytic activity. Once a critical oxide thickness was reached, especially at pH 7.4, no significant changes in the photoelectrical properties were observed for the rest of the test duration. This study provides new insights into the oxidation processes occurring at the InGaN/liquid interface, which can be exploited to improve InGaN stability and enhance photoanode performance for biosensing and water-splitting applications.

Red Luminescent Eu(III) Coordination Bricks Excited on Blue LED Chip.

PubMed

Koizuka, Toru; Yanagisawa, Kei; Hirai, Yuichi; Kitagawa, Yuichi; Nakanishi, Takayuki; Fushimi, Koji; Hasegawa, Yasuchika

2018-06-18

Three types of red luminescent Eu(III) complexes with Schiff base and hfa ligands (hfa: hexafluoroacetylacetonate), mononuclear [Eu(hfa) 2 (OAc)(salen) 2 ] (OAc: acetate anion, salen: N,N'-bis(salicylidene)ethylenediamine), brick-type [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] (salbn: N,N'-bis(salicylidene)-1,4-butanediamine), and polynuclear [Eu(hfa) 2 (OAc)(salhen)] n (salhen: N,N'-bis(salicylidene)-1,6-hexanediamine) are reported for white light-emitting diode (LED) devices. Among these complexes, brick-type [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] excited by blue light (460 nm) exhibits the photosensitized quantum yield (Φ π-π* = 47%) and remarkably high efficiency of sensitization (η sens = 96%). The efficiency of sensitization is caused by the excited state based on ligand-ligand interaction between the Schiff base and hfa ligands in Eu(III) complexes. To fabricate LED devices, the red luminescent [Eu 2 (hfa) 4 (OAc) 2 (salbn) 2 ] was mounted on an InGaN blue LED chip.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Wei; Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng

The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may becomemore » significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.« less

Electrical efficiency and droop in MQW LEDs

NASA Astrophysics Data System (ADS)

Malyutenko, V. K.

2014-02-01

It is believed that low power conversion efficiency in commercial MQW LEDs occurs as a result of efficiency droop, current-induced dynamic degradation of the internal quantum efficiency, injection efficiency, and extraction efficiency. Broadly speaking, all these "quenching" mechanisms could be referred to as the optical losses. The vast advances of high-power InGaN and AlGaInP MQW LEDs have been achieved by addressing these losses. In contrast to these studies, in this paper we consider an alternative approach to make high-power LEDs more efficient. We identify current-induced electrical efficiency degradation (EED) as a strong limiting factor of power conversion efficiency. We found that EED is caused by current crowding followed by an increase in current-induced series resistance of a device. By decreasing the current spreading length, EED also causes the optical efficiency to degrade and stands for an important aspect of LED performance. This paper gives scientists the opportunity to look for different attributes of EED.

High-performance semiconductor quantum-dot single-photon sources

NASA Astrophysics Data System (ADS)

Senellart, Pascale; Solomon, Glenn; White, Andrew

2017-11-01

Single photons are a fundamental element of most quantum optical technologies. The ideal single-photon source is an on-demand, deterministic, single-photon source delivering light pulses in a well-defined polarization and spatiotemporal mode, and containing exactly one photon. In addition, for many applications, there is a quantum advantage if the single photons are indistinguishable in all their degrees of freedom. Single-photon sources based on parametric down-conversion are currently used, and while excellent in many ways, scaling to large quantum optical systems remains challenging. In 2000, semiconductor quantum dots were shown to emit single photons, opening a path towards integrated single-photon sources. Here, we review the progress achieved in the past few years, and discuss remaining challenges. The latest quantum dot-based single-photon sources are edging closer to the ideal single-photon source, and have opened new possibilities for quantum technologies.

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Andrade, Nicolas; Monavarian, Morteza; Izyumskaya, Natalia; Das, Saikat; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2016-02-01

Near-field scanning optical microscopy was applied to investigate the spatial variations of extended defects and their effects on the optical quality for semi-polar (1-101) and (11-22) InGaN light emitting diodes (LEDs). (1-101) and (11-22) oriented InGaN LEDs emitting at 450-470 nm were grown on patterned Si (001) 7° offcut substrates and m-sapphire substrates by means of nano-epitaxial lateral overgrowth (ELO), respectively. For (1-101) structures, the photoluminescence (PL) at 85 K from the near surface c+ wings was found to be relatively uniform and strong across the sample. However, emission from the c- wings was substantially weaker due to the presence of high density of threading dislocations (TDs) and basal plane stacking faults (BSFs) as revealed from the local PL spectra. In case of (11-22) LED structures, near-field PL intensity correlated with the surface features and the striations along the direction parallel to the c-axis projection exposed facets where the Indium content was higher as deduced from shift in the PL peak energy.

Entanglement and quantum superposition induced by a single photon

NASA Astrophysics Data System (ADS)

Lü, Xin-You; Zhu, Gui-Lei; Zheng, Li-Li; Wu, Ying

2018-03-01

We predict the occurrence of single-photon-induced entanglement and quantum superposition in a hybrid quantum model, introducing an optomechanical coupling into the Rabi model. Originally, it comes from the photon-dependent quantum property of the ground state featured by the proposed hybrid model. It is associated with a single-photon-induced quantum phase transition, and is immune to the A2 term of the spin-field interaction. Moreover, the obtained quantum superposition state is actually a squeezed cat state, which can significantly enhance precision in quantum metrology. This work offers an approach to manipulate entanglement and quantum superposition with a single photon, which might have potential applications in the engineering of new single-photon quantum devices, and also fundamentally broaden the regime of cavity QED.

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

NASA Astrophysics Data System (ADS)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

PubMed Central

Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

2013-01-01

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

PubMed

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Deterministic and robust generation of single photons from a single quantum dot with 99.5% indistinguishability using adiabatic rapid passage.

PubMed

Wei, Yu-Jia; He, Yu-Ming; Chen, Ming-Cheng; Hu, Yi-Nan; He, Yu; Wu, Dian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2014-11-12

Single photons are attractive candidates of quantum bits (qubits) for quantum computation and are the best messengers in quantum networks. Future scalable, fault-tolerant photonic quantum technologies demand both stringently high levels of photon indistinguishability and generation efficiency. Here, we demonstrate deterministic and robust generation of pulsed resonance fluorescence single photons from a single semiconductor quantum dot using adiabatic rapid passage, a method robust against fluctuation of driving pulse area and dipole moments of solid-state emitters. The emitted photons are background-free, have a vanishing two-photon emission probability of 0.3% and a raw (corrected) two-photon Hong-Ou-Mandel interference visibility of 97.9% (99.5%), reaching a precision that places single photons at the threshold for fault-tolerant surface-code quantum computing. This single-photon source can be readily scaled up to multiphoton entanglement and used for quantum metrology, boson sampling, and linear optical quantum computing.

Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.

PubMed

Hoang, Thang B; Akselrod, Gleb M; Mikkelsen, Maiken H

2016-01-13

Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be integrated for directional, room-temperature single photon emission rates exceeding 80 GHz.

Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

NASA Astrophysics Data System (ADS)

Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

2017-07-01

Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Single-Photon-Triggered Quantum Phase Transition

NASA Astrophysics Data System (ADS)

Lü, Xin-You; Zheng, Li-Li; Zhu, Gui-Lei; Wu, Ying

2018-06-01

We propose a hybrid quantum model combining cavity QED and optomechanics, which allows the occurrence of an equilibrium superradiant quantum phase transition (QPT) triggered by a single photon. This single-photon-triggered QPT exists in the cases of both ignoring and including the so-called A2 term; i.e., it is immune to the no-go theorem. It originally comes from the photon-dependent quantum criticality featured by the proposed hybrid quantum model. Moreover, a reversed superradiant QPT is induced by the competition between the introduced A2 term and the optomechanical interaction. This work offers an approach to manipulate QPT with a single photon, which should inspire the exploration of single-photon quantum-criticality physics and the engineering of new single-photon quantum devices.

Single colloidal quantum dots as sources of single photons for quantum cryptography

NASA Astrophysics Data System (ADS)

Pisanello, Ferruccio; Qualtieri, Antonio; Leménager, Godefroy; Martiradonna, Luigi; Stomeo, Tiziana; Cingolani, Roberto; Bramati, Alberto; De Vittorio, Massimo

2011-02-01

Colloidal nanocrystals, i.e. quantum dots synthesized trough wet-chemistry approaches, are promising nanoparticles for photonic applications and, remarkably, their quantum nature makes them very promising for single photon emission at room temperature. In this work we describe two approaches to engineer the emission properties of these nanoemitters in terms of radiative lifetime and photon polarization, drawing a viable strategy for their exploitation as room-temperature single photon sources for quantum information and quantum telecommunications.

Quantum thermodynamic cycles and quantum heat engines. II.

PubMed

Quan, H T

2009-04-01

We study the quantum-mechanical generalization of force or pressure, and then we extend the classical thermodynamic isobaric process to quantum-mechanical systems. Based on these efforts, we are able to study the quantum version of thermodynamic cycles that consist of quantum isobaric processes, such as the quantum Brayton cycle and quantum Diesel cycle. We also consider the implementation of the quantum Brayton cycle and quantum Diesel cycle with some model systems, such as single particle in a one-dimensional box and single-mode radiation field in a cavity. These studies lay the microscopic (quantum-mechanical) foundation for Szilard-Zurek single-molecule engine.

On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot.

PubMed

Wu, Xiaofei; Jiang, Ping; Razinskas, Gary; Huo, Yongheng; Zhang, Hongyi; Kamp, Martin; Rastelli, Armando; Schmidt, Oliver G; Hecht, Bert; Lindfors, Klas; Lippitz, Markus

2017-07-12

Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature circuits that integrate single-photon sources, linear optical components, and detectors on a chip. Plasmonic nanocircuits will play essential roles in such developments. However, for quantum plasmonic circuits, integration of stable, bright, and narrow-band single photon sources in the structure has so far not been reported. Here we present a plasmonic nanocircuit driven by a self-assembled GaAs quantum dot. Through a planar dielectric-plasmonic hybrid waveguide, the quantum dot efficiently excites narrow-band single plasmons that are guided in a two-wire transmission line until they are converted into single photons by an optical antenna. Our work demonstrates the feasibility of fully on-chip plasmonic nanocircuits for quantum optical applications.

Gallium nitride-based micro-opto-electro-mechanical systems

NASA Astrophysics Data System (ADS)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial stresses, which are required to produce significantly larger tuning (up to several hundred meV) in quantum well-based devices.

High-Performance Single-Photon Sources via Spatial Multiplexing

DTIC Science & Technology

2014-01-01

ingredient for tasks such as quantum cryptography , quantum repeater, quantum teleportation, quantum computing, and truly-random number generation. Recently...SECURITY CLASSIFICATION OF: Single photons sources are desired for many potential quantum information applications. One common method to produce...photons sources are desired for many potential quantum information applications. One common method to produce single photons is based on a “heralding

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aseev, Pavel, E-mail: pavel.aseev@upm.es; Rodriguez, Paul E. D. Soto; Gómez, Víctor J.

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.

Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)

NASA Astrophysics Data System (ADS)

Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.

Diamond-based single-photon emitters

NASA Astrophysics Data System (ADS)

Aharonovich, I.; Castelletto, S.; Simpson, D. A.; Su, C.-H.; Greentree, A. D.; Prawer, S.

2011-07-01

The exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Sources of single photons are extremely important across many applications as they can serve as vectors for quantum information—thereby allowing long-range (perhaps even global-scale) quantum states to be made and manipulated for tasks such as quantum communication or distributed quantum computation. At the single-emitter level, quantum sources also afford new possibilities in terms of nanoscopy and bio-marking. Color centers in diamond are prominent candidates to generate and manipulate quantum states of light, as they are a photostable solid-state source of single photons at room temperature. In this review, we discuss the state of the art of diamond-based single-photon emitters and highlight their fabrication methodologies. We present the experimental techniques used to characterize the quantum emitters and discuss their photophysical properties. We outline a number of applications including quantum key distribution, bio-marking and sub-diffraction imaging, where diamond-based single emitters are playing a crucial role. We conclude with a discussion of the main challenges and perspectives for employing diamond emitters in quantum information processing.

Investigating and improving student understanding of quantum mechanics in the context of single photon interference

NASA Astrophysics Data System (ADS)

Marshman, Emily; Singh, Chandralekha

2017-06-01

Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the abstract quantum theory and concrete laboratory settings and have the potential to help students develop a solid grasp of the foundational issues in quantum mechanics. Here we describe students' conceptual difficulties with these topics in the context of Mach-Zehnder interferometer experiments with single photons and how the difficulties found in written surveys and individual interviews were used as a guide in the development of a Quantum Interactive Learning Tutorial (QuILT). The QuILT uses an inquiry-based approach to learning and takes into account the conceptual difficulties found via research to help upper-level undergraduate and graduate students learn about foundational quantum mechanics concepts using the concrete quantum optics context. It strives to help students learn the basics of quantum mechanics in the context of single photon experiment, develop the ability to apply fundamental quantum principles to experimental situations in quantum optics, and explore the differences between classical and quantum ideas in a concrete context. We discuss the findings from in-class evaluations suggesting that the QuILT was effective in helping students learn these abstract concepts.

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

NASA Astrophysics Data System (ADS)

Lu, Lin; Li, Ming-Chao; Lv, Chen; Gao, Wen-Gen; Jiang, Ming; Xu, Fu-Jun; Chen, Qi-Gong

2016-10-01

Performances of Ga- and N-polarity solar cells (SCs) adopting gradient-In-composition intrinsic layer (IL) are compared. It is found the gradient ILs can greatly weaken the negative influence from the polarization effects for the Ga- polarity case, and the highest conversion efficiency (η) of 2.18% can be obtained in the structure with a linear increase of In composition in the IL from bottom to top. This is mainly attributed to the adsorptions of more photons caused by the higher In composition in the IL closer to the p-GaN window layer. In contrast, for the N-polarity case, the SC structure with an InGaN IL adopting fixed In composition prevails over the ones adopting the gradient-In-composition IL, where the highest η of 9.28% can be obtained at x of 0.62. N-polarity SC structures are proven to have greater potential preparations in high-efficient InGaN SCs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306108, 61172131, and 61271377), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. 2013693), and the Anhui Polytechnic University Funds for Excellent Young Scientists, China (Grant No. 2014YQQ005).

Realization of a Cascaded Quantum System: Heralded Absorption of a Single Photon Qubit by a Single-Electron Charged Quantum Dot.

PubMed

Delteil, Aymeric; Sun, Zhe; Fält, Stefan; Imamoğlu, Atac

2017-04-28

Photonic losses pose a major limitation for the implementation of a quantum state transfer between nodes of a quantum network. A measurement that heralds a successful transfer without revealing any information about the qubit may alleviate this limitation. Here, we demonstrate the heralded absorption of a single photonic qubit, generated by a single neutral quantum dot, by a single-electron charged quantum dot that is located 5 m away. The transfer of quantum information to the spin degree of freedom takes place upon the emission of a photon; for a properly chosen or prepared quantum dot, the detection of this photon yields no information about the qubit. We show that this process can be combined with local operations optically performed on the destination node by measuring classical correlations between the absorbed photon color and the final state of the electron spin. Our work suggests alternative avenues for the realization of quantum information protocols based on cascaded quantum systems.

Research on Electrically Driven Single Photon Emitter by Diamond for Quantum Cryptography

DTIC Science & Technology

2015-03-24

by diamond for quantum cryptography 5a. CONTRACT NUMBER FA2386-14-1-4037 5b. GRANT NUMBE R Grant 14IOA093_144037 5c. PROGRAM ELEMENT...emerged as a highly competitive platform for applications in quantum cryptography , quantum computing, spintronics, and sensing or metrology...15. SUBJECT TERMS Diamond LED, Nitrogen Vacancy Complex, Quantum Computing, Quantum Cryptography , Single Spin Single Photon 16. SECURITY

Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-04-01

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

PubMed

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

PubMed

De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2012-11-15

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

Experimental test of single-system steering and application to quantum communication

NASA Astrophysics Data System (ADS)

Liu, Zhao-Di; Sun, Yong-Nan; Cheng, Ze-Di; Xu, Xiao-Ye; Zhou, Zong-Quan; Chen, Geng; Li, Chuan-Feng; Guo, Guang-Can

2017-02-01

Einstein-Podolsky-Rosen (EPR) steering describes the ability to steer remotely quantum states of an entangled pair by measuring locally one of its particles. Here we report on an experimental demonstration of single-system steering. The application to quantum communication is also investigated. Single-system steering refers to steering of a single d -dimensional quantum system that can be used in a unifying picture to certify the reliability of tasks employed in both quantum communication and quantum computation. In our experiment, high-dimensional quantum states are implemented by encoding polarization and orbital angular momentum of photons with dimensionality of up to 12.

Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

NASA Astrophysics Data System (ADS)

He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

2017-08-01

Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

Downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel.

PubMed

Pelc, Jason S; Yu, Leo; De Greve, Kristiaan; McMahon, Peter L; Natarajan, Chandra M; Esfandyarpour, Vahid; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Yamamoto, Yoshihisa; Fejer, M M

2012-12-03

Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm using a fiber-coupled periodically poled lithium niobate waveguide and a 2.2-μm pulsed pump laser. The single-photon character of the quantum dot emission is preserved during the downconversion process: we measure a cross-correlation g(2)(τ = 0) = 0.17 using resonant excitation of the quantum dot. We show that the downconversion interface is fully compatible with coherent optical control of the quantum dot electron spin through the observation of Rabi oscillations in the downconverted photon counts. These results represent a critical step towards a long-distance hybrid quantum network in which subsystems operating at different wavelengths are connected through quantum frequency conversion devices and 1.5-μm quantum channels.

Deterministic and storable single-photon source based on a quantum memory.

PubMed

Chen, Shuai; Chen, Yu-Ao; Strassel, Thorsten; Yuan, Zhen-Sheng; Zhao, Bo; Schmiedmayer, Jörg; Pan, Jian-Wei

2006-10-27

A single-photon source is realized with a cold atomic ensemble (87Rb atoms). A single excitation, written in an atomic quantum memory by Raman scattering of a laser pulse, is retrieved deterministically as a single photon at a predetermined time. It is shown that the production rate of single photons can be enhanced considerably by a feedback circuit while the single-photon quality is conserved. Such a single-photon source is well suited for future large-scale realization of quantum communication and linear optical quantum computation.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

PubMed

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Ultrafast optical control of individual quantum dot spin qubits.

PubMed

De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

2013-09-01

Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled with the spin, and these photons are then interfered. We review recent work demonstrating entanglement between a stationary spin qubit and a flying photonic qubit. These experiments utilize the polarization- and frequency-dependent spontaneous emission from the lowest charged exciton state to single spin Zeeman sublevels.

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

NASA Astrophysics Data System (ADS)

Malinverni, Marco; Tardy, Camille; Rossetti, Marco; Castiglia, Antonino; Duelk, Marcus; Vélez, Christian; Martin, Denis; Grandjean, Nicolas

2016-06-01

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm-2.

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

NASA Astrophysics Data System (ADS)

Inatomi, Yuya; Kangawa, Yoshihiro; Ito, Tomonori; Suski, Tadeusz; Kumagai, Yoshinao; Kakimoto, Koichi; Koukitu, Akinori

2017-07-01

The composition pulling effect in metalorganic vapor-phase InGaN epitaxy was theoretically investigated by thermodynamic analysis. The excess energies of biaxial-strained In x Ga1- x N were numerically calculated using empirical interatomic potentials considering different situations: (i) coherent growth on GaN(0001), (ii) coherent growth on In0.2Ga0.8N(0001), and (iii) bulk growth. Using the excess energies, the excess chemical potentials of InN and GaN alloys were computed. Our results show that compressive strain suppresses In incorporation, whereas tensile strain promotes it. Moreover, assuming chemical equilibrium, the relationship between the solid composition and the growth conditions was predicted. The results successfully reproduced the typical composition pulling effect.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

A novel yellow-emitting SrAlSi4N7:Ce3+ phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

NASA Astrophysics Data System (ADS)

Ruan, Jian; Xie, Rong-Jun; Funahashi, Shiro; Tanaka, Yoshinori; Takeda, Takashi; Suehiro, Takayuki; Hirosaki, Naoto; Li, Yuan-Qiang

2013-12-01

Ce3+-doped and Ce3+/Li+-codoped SrAlSi4N7 phosphors were synthesized by gas pressure sintering of powder mixtures of Sr3N2, AlN, α-Si3N4, CeN and Li3N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi4N7:Ce3+(Ce3+/Li+) were investigated in this work. The band structure calculated by the DMol3 code shows that SrAlSi4N7 has a direct band gap of 3.87 eV. The single crystal analysis of Ce3+-doped SrAlSi4N7 indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi4N7 was identified as a major phase of the fired powders, and Sr5Al5Si21N35O2 and AlN as minor phases. Both Ce3+ and Ce3+/Li+ doped SrAlSi4N7 phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce3+/Li+-doped SrAlSi4N7 (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr0.97Al1.03Si3.997N\\94\\maccounttest14=t0005_18193 7:Ce3+0.03 with a commercial blue InGaN chip. It indicates that SrAlSi4N7:Ce3+ is a promising yellow emitting down-conversion phosphor for white LEDs.

Recent advances in the science and technology for solid state lighting

NASA Astrophysics Data System (ADS)

Munkholm, Anneli

2003-03-01

Recent development of high power light emitting diodes (LEDs) has enabled fabrication of solid state devices with efficiencies that surpass that of incandescent light, as well as providing a total light output significantly exceeding that of conventional indicator LEDs. This breakthrough in high flux is opening up new applications for use of high power LEDs, such as liquid crystal display backlighting and automotive headlights. Some of the key elements to this technological breakthrough are the flip-chip device design, power packaging and phosphor coating technology, which will be discussed. In addition to device design improvements, our fundamental knowledge of the III-nitride material system is improving and has resulted in higher internal quantum efficiencies. Strain plays a significant role in complex AlInGaN heterostructures used in current devices. Using a multi-beam optical strain sensor (MOSS) system to measure the wafer curvature in situ, we have characterized the strain during metal-organic chemical vapor deposition of III-nitrides. Strain measurements of InGaN, AlGaN and Si-doped GaN films on GaN will be presented.

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

PubMed Central

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-01-01

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

PubMed

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-04-04

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

Luminescence properties of Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} from various Eu{sup 2+} sites for white-light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jia, E-mail: zhangjia@hytc.edu.cn; Jiang, Cheng

2014-12-15

Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} phosphors were synthesized by solid-state reaction method, and their luminescence properties were investigated. In the emission spectra, several overlapping emission bands originating from various Eu{sup 2+} sites were found. Eu{sup 2+} in Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8} exhibits green emission around 506 nm, and the sample doped with 0.1 mol% Eu{sup 2+} shows the strongest brightness under 365 nm excitation with the quantum efficiency of 63.6%. In the excitation spectra, strong and broad excitation bands from 250 to 450 nm were observed, which could well match with the emission wavelength of the light-emitting diodemore » chip. The fabrication test on the InGaN chip indicates the Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} phosphor could be promising candidate for white light-emitting diodes.« less

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Skrobas, K.; Suski, T.; Christensen, N. E.; Svane, A.

2015-08-01

The electronic structures of short period mGaN/nGayAl1-yN and mInyGa1-yN/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations, the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.

Atom Probe Tomography Analysis of Gallium-Nitride-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Prosa, Ty J.; Olson, David; Giddings, A. Devin; Clifton, Peter H.; Larson, David J.; Lefebvre, Williams

2014-03-01

Thin-film light-emitting diodes (LEDs) composed of GaN/InxGa1-xN/GaN quantum well (QW) structures are integrated into modern optoelectronic devices because of the tunable InGaN band-gap enabling emission of the full visible spectrum. Atom probe tomography (APT) offers unique capabilities for 3D device characterization including compositional mapping of nano-volumes (>106 nm3) , high detection efficiency (>50%), and good sensitivity. In this study, APT is used to understand the distribution of dopants as well as Al and In alloying agents in a GaN device. Measurements using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have also been made to improve the accuracy of the APT analysis by correlating the information content of these complimentary techniques. APT analysis reveals various QW and other optoelectronic structures including a Mg p-GaN layer, an Al-rich electron blocking layer, an In-rich multi-QW region, and an In-based super-lattice structure. The multi-QW composition shows good quantitative agreement with layer thickness and spacing extracted from a high resolution TEM image intensity analysis.

Investigating and Improving Student Understanding of Quantum Mechanics in the Context of Single Photon Interference

ERIC Educational Resources Information Center

Marshman, Emily; Singh, Chandralekha

2017-01-01

Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the…

Joint remote control of an arbitrary single-qubit state by using a multiparticle entangled state as the quantum channel

NASA Astrophysics Data System (ADS)

Lv, Shu-Xin; Zhao, Zheng-Wei; Zhou, Ping

2018-01-01

We present a scheme for joint remote implementation of an arbitrary single-qubit operation following some ideas in one-way quantum computation. All the senders share the information of implemented quantum operation and perform corresponding single-qubit measurements according to their information of implemented operation. An arbitrary single-qubit operation can be implemented upon the remote receiver's quantum system if the receiver cooperates with all the senders. Moreover, we study the protocol of multiparty joint remote implementation of an arbitrary single-qubit operation with many senders by using a multiparticle entangled state as the quantum channel.

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Hybrid Circuit Quantum Electrodynamics: Coupling a Single Silicon Spin Qubit to a Photon

DTIC Science & Technology

2015-01-01

HYBRID CIRCUIT QUANTUM ELECTRODYNAMICS: COUPLING A SINGLE SILICON SPIN QUBIT TO A PHOTON PRINCETON UNIVERSITY JANUARY 2015 FINAL...SILICON SPIN QUBIT TO A PHOTON 5a. CONTRACT NUMBER FA8750-12-2-0296 5b. GRANT NUMBER N/A 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jason R. Petta...architectures. 15. SUBJECT TERMS Quantum Computing, Quantum Hybrid Circuits, Quantum Electrodynamics, Coupling a Single Silicon Spin Qubit to a Photon

DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS

DTIC Science & Technology

2017-10-01

DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS UNIVERSITY OF SOUTHERN CALIFORNIA OCTOBER 2017 FINAL...SUBTITLE DESIGN METHODOLOGIES AND TOOLS FOR SINGLE-FLUX QUANTUM LOGIC CIRCUITS 5a. CONTRACT NUMBER FA8750-15-C-0203 5b. GRANT NUMBER N/A 5c. PROGRAM...of this project was to investigate the state-of-the-art in design and optimization of single-flux quantum (SFQ) logic circuits, e.g., RSFQ and ERSFQ

Teleporting photonic qudits using multimode quantum scissors.

PubMed

Goyal, Sandeep K; Konrad, Thomas

2013-12-19

Teleportation plays an important role in the communication of quantum information between the nodes of a quantum network and is viewed as an essential ingredient for long-distance Quantum Cryptography. We describe a method to teleport the quantum information carried by a photon in a superposition of a number d of light modes (a "qudit") by the help of d additional photons based on transcription. A qudit encoded into a single excitation of d light modes (in our case Laguerre-Gauss modes which carry orbital angular momentum) is transcribed to d single-rail photonic qubits, which are spatially separated. Each single-rail qubit consists of a superposition of vacuum and a single photon in each one of the modes. After successful teleportation of each of the d single-rail qubits by means of "quantum scissors" they are converted back into a qudit carried by a single photon which completes the teleportation scheme.

Teleporting photonic qudits using multimode quantum scissors

NASA Astrophysics Data System (ADS)

Goyal, Sandeep K.; Konrad, Thomas

2013-12-01

Teleportation plays an important role in the communication of quantum information between the nodes of a quantum network and is viewed as an essential ingredient for long-distance Quantum Cryptography. We describe a method to teleport the quantum information carried by a photon in a superposition of a number d of light modes (a ``qudit'') by the help of d additional photons based on transcription. A qudit encoded into a single excitation of d light modes (in our case Laguerre-Gauss modes which carry orbital angular momentum) is transcribed to d single-rail photonic qubits, which are spatially separated. Each single-rail qubit consists of a superposition of vacuum and a single photon in each one of the modes. After successful teleportation of each of the d single-rail qubits by means of ``quantum scissors'' they are converted back into a qudit carried by a single photon which completes the teleportation scheme.

Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

NASA Astrophysics Data System (ADS)

Oliva, Robert; Zelewski, Szymon J.; Janicki, Łukasz; Gwóźdź, Katarzyna R.; Serafińczuk, Jarosław; Rudziński, Mariusz; Özbay, Ekmel; Kudrawiec, Robert

2018-03-01

Photoacoustic (PA) measurements have been performed on a series of In x Ga1-x N thin films grown with x > 50%. In order to illustrate the usefulness of this technique, these measurements have been compared with the results obtained by the following conventional techniques: photoluminescence, transmittance and contactless electroreflectance. Amongst all these techniques, only PA spectroscopy exhibited signal without the undesired Fabry-Perot interferences arising from the thin film and buffer layer. By accurately assessing the strain state and composition of our samples, we were able to study the compositional dependence of the band gap of our epilayers. Our results show that a bowing parameter of 1.43 eV successfully describes the compositional dependence of the band gap of InGaN.

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

Influence of the growth method on degradation of InGaN laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Muzioł, Grzegorz; Skierbiszewski, Czesław; Grzanka, Ewa; Wiśniewski, Przemysław; Makarowa, Irina; Czernecki, Robert; Suski, Tadek; Perlin, Piotr

2017-09-01

We demonstrate the influence of the operation current density and temperature on the degradation rate of InGaN laser diodes grown via metalorganic vapor-phase epitaxy (MOVPE) and plasma-assisted molecular beam epitaxy (PAMBE). The degradation rate of the MOVPE devices shows an exponential dependence on the temperature, with an activation energy of 0.38-0.43 eV, and a linear dependence on the operating current density. In comparison, the MBE-grown lasers exhibit a higher activation energy, on the order of 1 eV, and typically a lower degradation rate, resulting in a service time exceeding 50,000 h. We suggest that this difference may be related to the lower concentration of H in the Mg-doped MBE-grown GaN.

Scalable quantum computer architecture with coupled donor-quantum dot qubits

DOEpatents

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Quantum correlations of helicity entangled states in non-inertial frames beyond single mode approximation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harsij, Zeynab, E-mail: z.harsij@ph.iut.ac.ir; Mirza, Behrouz, E-mail: b.mirza@cc.iut.ac.ir

A helicity entangled tripartite state is considered in which the degree of entanglement is preserved in non-inertial frames. It is shown that Quantum Entanglement remains observer independent. As another measure of quantum correlation, Quantum Discord has been investigated. It is explicitly shown that acceleration has no effect on the degree of quantum correlation for the bipartite and tripartite helicity entangled states. Geometric Quantum Discord as a Hilbert–Schmidt distance is computed for helicity entangled states. It is shown that living in non-inertial frames does not make any influence on this distance, either. In addition, the analysis has been extended beyond singlemore » mode approximation to show that acceleration does not have any impact on the quantum features in the limit beyond the single mode. As an interesting result, while the density matrix depends on the right and left Unruh modes, the Negativity as a measure of Quantum Entanglement remains constant. Also, Quantum Discord does not change beyond single mode approximation. - Highlights: • The helicity entangled states here are observer independent in non-inertial frames. • It is explicitly shown that Quantum Discord for these states is observer independent. • Geometric Quantum Discord is also not affected by acceleration increase. • Extending to beyond single mode does not change the degree of entanglement. • Beyond single mode approximation the degree of Quantum Discord is also preserved.« less

Biological Information Processing in Single Microtubules

DTIC Science & Technology

2014-03-05

single Microtubule Google Mountain view campus, workshop on quantum biology 22 October 2010 3. Paul Davies Beyond Center at Arizona State University...Phoenix) Phoenix, workshop on quantum biology and cancer research, Experimental studies on single microtubule, 25-27 October 2010, Tempe, Arizona...State University, USA 4. Quantum aspects of microtubule: Direct experimental evidence for the existence of quantum states in microtubule, Towards a

Single-photon-level quantum image memory based on cold atomic ensembles

PubMed Central

Ding, Dong-Sheng; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2013-01-01

A quantum memory is a key component for quantum networks, which will enable the distribution of quantum information. Its successful development requires storage of single-photon light. Encoding photons with spatial shape through higher-dimensional states significantly increases their information-carrying capability and network capacity. However, constructing such quantum memories is challenging. Here we report the first experimental realization of a true single-photon-carrying orbital angular momentum stored via electromagnetically induced transparency in a cold atomic ensemble. Our experiments show that the non-classical pair correlation between trigger photon and retrieved photon is retained, and the spatial structure of input and retrieved photons exhibits strong similarity. More importantly, we demonstrate that single-photon coherence is preserved during storage. The ability to store spatial structure at the single-photon level opens the possibility for high-dimensional quantum memories. PMID:24084711

Quantum correlations of helicity entangled states in non-inertial frames beyond single mode approximation

NASA Astrophysics Data System (ADS)

Harsij, Zeynab; Mirza, Behrouz

2014-12-01

A helicity entangled tripartite state is considered in which the degree of entanglement is preserved in non-inertial frames. It is shown that Quantum Entanglement remains observer independent. As another measure of quantum correlation, Quantum Discord has been investigated. It is explicitly shown that acceleration has no effect on the degree of quantum correlation for the bipartite and tripartite helicity entangled states. Geometric Quantum Discord as a Hilbert-Schmidt distance is computed for helicity entangled states. It is shown that living in non-inertial frames does not make any influence on this distance, either. In addition, the analysis has been extended beyond single mode approximation to show that acceleration does not have any impact on the quantum features in the limit beyond the single mode. As an interesting result, while the density matrix depends on the right and left Unruh modes, the Negativity as a measure of Quantum Entanglement remains constant. Also, Quantum Discord does not change beyond single mode approximation.

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.

PubMed

Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon

2016-12-21

A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

Single-server blind quantum computation with quantum circuit model

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Quantum communication complexity using the quantum Zeno effect

NASA Astrophysics Data System (ADS)

Tavakoli, Armin; Anwer, Hammad; Hameedi, Alley; Bourennane, Mohamed

2015-07-01

The quantum Zeno effect (QZE) is the phenomenon in which the unitary evolution of a quantum state is suppressed, e.g., due to frequent measurements. Here, we investigate the use of the QZE in a class of communication complexity problems (CCPs). Quantum entanglement is known to solve certain CCPs beyond classical constraints. However, recent developments have yielded CCPs for which superclassical results can be obtained using only communication of a single d -level quantum state (qudit) as a resource. In the class of CCPs considered here, we show quantum reduction of complexity in three ways: using (i) entanglement and the QZE, (ii) a single qudit and the QZE, and (iii) a single qudit. We have performed a proof of concept experimental demonstrations of three party CCP protocol based on single-qubit communication with and without QZE.

A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band

NASA Astrophysics Data System (ADS)

Zeuner, Katharina D.; Paul, Matthias; Lettner, Thomas; Reuterskiöld Hedlund, Carl; Schweickert, Lucas; Steinhauer, Stephan; Yang, Lily; Zichi, Julien; Hammar, Mattias; Jöns, Klaus D.; Zwiller, Val

2018-04-01

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 μm with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths.

First observation of the quantized exciton-polariton field and effect of interactions on a single polariton

PubMed Central

Silva, Blanca; Fieramosca, Antonio; Tasco, Vittorianna; del Valle, Elena; Ballarini, Dario; Gigli, Giuseppe; Sanvitto, Daniele

2018-01-01

Polaritons are quasi-particles that originate from the coupling of light with matter and that demonstrate quantum phenomena at the many-particle mesoscopic level, such as Bose-Einstein condensation and superfluidity. A highly sought and long-time missing feature of polaritons is a genuine quantum manifestation of their dynamics at the single-particle level. Although they are conceptually perceived as entangled states and theoretical proposals abound for an explicit manifestation of their single-particle properties, so far their behavior has remained fully accounted for by classical and mean-field theories. We report the first experimental demonstration of a genuinely quantum state of the microcavity polariton field, by swapping a photon for a polariton in a two-photon entangled state generated by parametric downconversion. When bringing this single-polariton quantum state in contact with a polariton condensate, we observe a disentangling with the external photon. This manifestation of a polariton quantum state involving a single quantum unlocks new possibilities for quantum information processing with interacting bosons. PMID:29725616

First observation of the quantized exciton-polariton field and effect of interactions on a single polariton.

PubMed

Cuevas, Álvaro; López Carreño, Juan Camilo; Silva, Blanca; De Giorgi, Milena; Suárez-Forero, Daniel G; Sánchez Muñoz, Carlos; Fieramosca, Antonio; Cardano, Filippo; Marrucci, Lorenzo; Tasco, Vittorianna; Biasiol, Giorgio; Del Valle, Elena; Dominici, Lorenzo; Ballarini, Dario; Gigli, Giuseppe; Mataloni, Paolo; Laussy, Fabrice P; Sciarrino, Fabio; Sanvitto, Daniele

2018-04-01

Polaritons are quasi-particles that originate from the coupling of light with matter and that demonstrate quantum phenomena at the many-particle mesoscopic level, such as Bose-Einstein condensation and superfluidity. A highly sought and long-time missing feature of polaritons is a genuine quantum manifestation of their dynamics at the single-particle level. Although they are conceptually perceived as entangled states and theoretical proposals abound for an explicit manifestation of their single-particle properties, so far their behavior has remained fully accounted for by classical and mean-field theories. We report the first experimental demonstration of a genuinely quantum state of the microcavity polariton field, by swapping a photon for a polariton in a two-photon entangled state generated by parametric downconversion. When bringing this single-polariton quantum state in contact with a polariton condensate, we observe a disentangling with the external photon. This manifestation of a polariton quantum state involving a single quantum unlocks new possibilities for quantum information processing with interacting bosons.

Universal quantum gates for Single Cooper Pair Box based quantum computing

NASA Technical Reports Server (NTRS)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime.

PubMed

Press, David; Götzinger, Stephan; Reitzenstein, Stephan; Hofmann, Carolin; Löffler, Andreas; Kamp, Martin; Forchel, Alfred; Yamamoto, Yoshihisa

2007-03-16

We observe antibunching in the photons emitted from a strongly coupled single quantum dot and pillar microcavity in resonance. When the quantum dot was spectrally detuned from the cavity mode, the cavity emission remained antibunched, and also anticorrelated from the quantum dot emission. Resonant pumping of the selected quantum dot via an excited state enabled these observations by eliminating the background emitters that are usually coupled to the cavity. This device demonstrates an on-demand single-photon source operating in the strong coupling regime, with a Purcell factor of 61+/-7 and quantum efficiency of 97%.

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter.

PubMed

Zaske, Sebastian; Lenhard, Andreas; Keßler, Christian A; Kettler, Jan; Hepp, Christian; Arend, Carsten; Albrecht, Roland; Schulz, Wolfgang-Michael; Jetter, Michael; Michler, Peter; Becher, Christoph

2012-10-05

We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.

Implementation of single-photon quantum routing and decoupling using a nitrogen-vacancy center and a whispering-gallery-mode resonator-waveguide system.

PubMed

Cao, Cong; Duan, Yu-Wen; Chen, Xi; Zhang, Ru; Wang, Tie-Jun; Wang, Chuan

2017-07-24

Quantum router is a key element needed for the construction of future complex quantum networks. However, quantum routing with photons, and its inverse, quantum decoupling, are difficult to implement as photons do not interact, or interact very weakly in nonlinear media. In this paper, we investigate the possibility of implementing photonic quantum routing based on effects in cavity quantum electrodynamics, and present a scheme for single-photon quantum routing controlled by the other photon using a hybrid system consisting of a single nitrogen-vacancy (NV) center coupled with a whispering-gallery-mode resonator-waveguide structure. Different from the cases in which classical information is used to control the path of quantum signals, both the control and signal photons are quantum in our implementation. Compared with the probabilistic quantum routing protocols based on linear optics, our scheme is deterministic and also scalable to multiple photons. We also present a scheme for single-photon quantum decoupling from an initial state with polarization and spatial-mode encoding, which can implement an inverse operation to the quantum routing. We discuss the feasibility of our schemes by considering current or near-future techniques, and show that both the schemes can operate effectively in the bad-cavity regime. We believe that the schemes could be key building blocks for future complex quantum networks and large-scale quantum information processing.

Novel single photon sources for new generation of quantum communications

DTIC Science & Technology

2017-06-13

be used as building blocks for quantum cryptography and quantum key distribution There were numerous important achievements for the projects in the...single photon sources that will be used as build- ing blocks for quantum cryptography and quantum key distribution There were numerous im- portant...and enable absolutely secured information transfer between distant nodes – key prerequisite for quantum cryptography . Experiment: the experimental

Quantum Dots

NASA Astrophysics Data System (ADS)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by Lithographic Techniques: III-V Semiconductors and Carbon: 15. Electrically controlling single spin coherence in semiconductor nanostructures Y. Dovzhenko, K. Wang, M. D. Schroer and J. R. Petta; 16. Theory of electron and nuclear spins in III-V semiconductor and carbon-based dots H. Ribeiro and G. Burkard; 17. Graphene quantum dots: transport experiments and local imaging S. Schnez, J. Guettinger, F. Molitor, C. Stampfer, M. Huefner, T. Ihn and K. Ensslin; Part VI. Single Dots for Future Telecommunications Applications: 18. Electrically operated entangled light sources based on quantum dots R. M. Stevenson, A. J. Bennett and A. J. Shields; 19. Deterministic single quantum dot cavities at telecommunication wavelengths D. Dalacu, K. Mnaymneh, J. Lapointe, G. C. Aers, P. J. Poole, R. L. Williams and S. Hughes; Index.

Loading a single photon into an optical cavity

NASA Astrophysics Data System (ADS)

Du, Shengwang; Liu, Chang; Sun, Yuan; Zhao, Luwei; Zhang, Shanchao; Loy, M. M. T.

2015-05-01

Confining and manipulating single photons inside a reflective optical cavity is an essential task of cavity quantum electrodynamics (CQED) for probing the quantum nature of light quanta. Such systems are also elementary building blocks for many protocols of quantum network, where remote cavity quantum nodes are coupled through flying photons. The connectivity and scalability of such a quantum network strongly depends on the efficiency of loading a single photon into cavity. In this work we demonstrate that a single photon with an optimal temporal waveform can be efficiently loaded into a cavity. Using heralded narrow-band single photons with exponential growth wave packet whose time constant matches the photon lifetime in the cavity, we demonstrate a loading efficiency of more than 87 percent from free space to a single-sided Fabry-Perot cavity. Our result and approach may enable promising applications in realizing large-scale CQED-based quantum networks. The work was supported by the Hong Kong RGC (Project No. 601411).

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

PubMed

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Online evolution reconstruction from a single measurement record with random time intervals for quantum communication

NASA Astrophysics Data System (ADS)

Zhou, Hua; Su, Yang; Wang, Rong; Zhu, Yong; Shen, Huiping; Pu, Tao; Wu, Chuanxin; Zhao, Jiyong; Zhang, Baofu; Xu, Zhiyong

2017-10-01

Online reconstruction of a time-variant quantum state from the encoding/decoding results of quantum communication is addressed by developing a method of evolution reconstruction from a single measurement record with random time intervals. A time-variant two-dimensional state is reconstructed on the basis of recovering its expectation value functions of three nonorthogonal projectors from a random single measurement record, which is composed from the discarded qubits of the six-state protocol. The simulated results prove that our method is robust to typical metro quantum channels. Our work extends the Fourier-based method of evolution reconstruction from the version for a regular single measurement record with equal time intervals to a unified one, which can be applied to arbitrary single measurement records. The proposed protocol of evolution reconstruction runs concurrently with the one of quantum communication, which can facilitate the online quantum tomography.

High-fidelity projective read-out of a solid-state spin quantum register.

PubMed

Robledo, Lucio; Childress, Lilian; Bernien, Hannes; Hensen, Bas; Alkemade, Paul F A; Hanson, Ronald

2011-09-21

Initialization and read-out of coupled quantum systems are essential ingredients for the implementation of quantum algorithms. Single-shot read-out of the state of a multi-quantum-bit (multi-qubit) register would allow direct investigation of quantum correlations (entanglement), and would give access to further key resources such as quantum error correction and deterministic quantum teleportation. Although spins in solids are attractive candidates for scalable quantum information processing, their single-shot detection has been achieved only for isolated qubits. Here we demonstrate the preparation and measurement of a multi-spin quantum register in a low-temperature solid-state system by implementing resonant optical excitation techniques originally developed in atomic physics. We achieve high-fidelity read-out of the electronic spin associated with a single nitrogen-vacancy centre in diamond, and use this read-out to project up to three nearby nuclear spin qubits onto a well-defined state. Conversely, we can distinguish the state of the nuclear spins in a single shot by mapping it onto, and subsequently measuring, the electronic spin. Finally, we show compatibility with qubit control: we demonstrate initialization, coherent manipulation and single-shot read-out in a single experiment on a two-qubit register, using techniques suitable for extension to larger registers. These results pave the way for a test of Bell's inequalities on solid-state spins and the implementation of measurement-based quantum information protocols. © 2011 Macmillan Publishers Limited. All rights reserved

Joining the quantum state of two photons into one

NASA Astrophysics Data System (ADS)

Vitelli, Chiara; Spagnolo, Nicolò; Aparo, Lorenzo; Sciarrino, Fabio; Santamato, Enrico; Marrucci, Lorenzo

2013-07-01

Photons are the ideal carriers of quantum information for communication. Each photon can have a single or multiple qubits encoded in its internal quantum state, as defined by optical degrees of freedom such as polarization, wavelength, transverse modes and so on. However, as photons do not interact, multiplexing and demultiplexing the quantum information across photons has not been possible hitherto. Here, we introduce and demonstrate experimentally a physical process, named `quantum joining', in which the two-dimensional quantum states (qubits) of two input photons are combined into a single output photon, within a four-dimensional Hilbert space. The inverse process is also proposed, in which the four-dimensional quantum state of a single photon is split into two photons, each carrying a qubit. Both processes can be iterated, and hence provide a flexible quantum interconnect to bridge multiparticle protocols of quantum information with multidegree-of-freedom ones, with possible applications in future quantum networking.

Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm.

PubMed

Godfrin, C; Ferhat, A; Ballou, R; Klyatskaya, S; Ruben, M; Wernsdorfer, W; Balestro, F

2017-11-03

Quantum algorithms use the principles of quantum mechanics, such as, for example, quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimization, simulation, and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3/2 spin carried by a Tb ion sitting in a single molecular magnet transistor. The coherent manipulation of this multilevel quantum system (qudit) is achieved by means of electric fields only. Grover's search algorithm is implemented by constructing a quantum database via a multilevel Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multilevel quantum system with nonequal spaced energy levels, opening the way to novel quantum search algorithms.

Operating Quantum States in Single Magnetic Molecules: Implementation of Grover's Quantum Algorithm

NASA Astrophysics Data System (ADS)

Godfrin, C.; Ferhat, A.; Ballou, R.; Klyatskaya, S.; Ruben, M.; Wernsdorfer, W.; Balestro, F.

2017-11-01

Quantum algorithms use the principles of quantum mechanics, such as, for example, quantum superposition, in order to solve particular problems outperforming standard computation. They are developed for cryptography, searching, optimization, simulation, and solving large systems of linear equations. Here, we implement Grover's quantum algorithm, proposed to find an element in an unsorted list, using a single nuclear 3 /2 spin carried by a Tb ion sitting in a single molecular magnet transistor. The coherent manipulation of this multilevel quantum system (qudit) is achieved by means of electric fields only. Grover's search algorithm is implemented by constructing a quantum database via a multilevel Hadamard gate. The Grover sequence then allows us to select each state. The presented method is of universal character and can be implemented in any multilevel quantum system with nonequal spaced energy levels, opening the way to novel quantum search algorithms.

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom

PubMed Central

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-01-01

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process. PMID:27321821

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

PubMed

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-06-20

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

Autonomous calibration of single spin qubit operations

NASA Astrophysics Data System (ADS)

Frank, Florian; Unden, Thomas; Zoller, Jonathan; Said, Ressa S.; Calarco, Tommaso; Montangero, Simone; Naydenov, Boris; Jelezko, Fedor

2017-12-01

Fully autonomous precise control of qubits is crucial for quantum information processing, quantum communication, and quantum sensing applications. It requires minimal human intervention on the ability to model, to predict, and to anticipate the quantum dynamics, as well as to precisely control and calibrate single qubit operations. Here, we demonstrate single qubit autonomous calibrations via closed-loop optimisations of electron spin quantum operations in diamond. The operations are examined by quantum state and process tomographic measurements at room temperature, and their performances against systematic errors are iteratively rectified by an optimal pulse engineering algorithm. We achieve an autonomous calibrated fidelity up to 1.00 on a time scale of minutes for a spin population inversion and up to 0.98 on a time scale of hours for a single qubit π/2 -rotation within the experimental error of 2%. These results manifest a full potential for versatile quantum technologies.

Single-photon non-linear optics with a quantum dot in a waveguide

NASA Astrophysics Data System (ADS)

Javadi, A.; Söllner, I.; Arcari, M.; Hansen, S. Lindskov; Midolo, L.; Mahmoodian, S.; Kiršanskė, G.; Pregnolato, T.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P.

2015-10-01

Strong non-linear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, non-linear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created. Here we show that a single quantum dot in a photonic-crystal waveguide can be used as a giant non-linearity sensitive at the single-photon level. The non-linear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum non-linearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.

Single-Atom Single-Photon Quantum Interface

NASA Astrophysics Data System (ADS)

Moehring, David; Bochmann, Joerg; Muecke, Martin; Specht, Holger; Weber, Bernhard; Wilk, Tatjana; Rempe, Gerhard

2008-05-01

By combining atom trapping techniques and cavity cooling schemes we are able to trap a single neutral atom inside a high-finesse cavity for several tens of seconds. We show that our coupled atom-cavity system can be used to generate single photons in a controlled way. With our long trapping times and high single-photon production efficiency, the non-classical properties of the emitted light can be shown in the photon correlations of a single atom. In a similar atom-cavity setup, we investigate the interface between atoms and photons by entangling a single atom with a single photon emitted into the cavity and by further mapping the quantum state of the atom onto a second single photon. These schemes are intrinsically deterministic and establish the basic element required to realize a distributed quantum network with individual atoms at rest as quantum memories and single flying photons as quantum messengers. This work was supported by the Deutsche Forschungsgemeinschaft, and the European Union SCALA and CONQUEST programs. D. L. M. acknowledges support from the Alexander von Humboldt Foundation.

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2017-03-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.

Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

PubMed Central

Hu, C. Y.

2017-01-01

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks. PMID:28349960

Tuning Single Quantum Dot Emission with a Micromirror.

PubMed

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

Experimental protocol for high-fidelity heralded photon-to-atom quantum state transfer.

PubMed

Kurz, Christoph; Schug, Michael; Eich, Pascal; Huwer, Jan; Müller, Philipp; Eschner, Jürgen

2014-11-21

A quantum network combines the benefits of quantum systems regarding secure information transmission and calculational speed-up by employing quantum coherence and entanglement to store, transmit and process information. A promising platform for implementing such a network are atom-based quantum memories and processors, interconnected by photonic quantum channels. A crucial building block in this scenario is the conversion of quantum states between single photons and single atoms through controlled emission and absorption. Here we present an experimental protocol for photon-to-atom quantum state conversion, whereby the polarization state of an absorbed photon is mapped onto the spin state of a single absorbing atom with >95% fidelity, while successful conversion is heralded by a single emitted photon. Heralded high-fidelity conversion without affecting the converted state is a main experimental challenge, in order to make the transferred information reliably available for further operations. We record >80 s(-1) successful state transfer events out of 18,000 s(-1) repetitions.

QUANTUM CRYPTOGRAPHY: Single Photons.

PubMed

Benjamin, S

2000-12-22

Quantum cryptography offers the potential of totally secure transfer of information, but as Benjamin discusses in this Perspective, its practical implementation hinges on being able to generate single photons (rather than two or more) at a time. Michler et al. show how this condition can be met in a quantum dot microdisk structure. Single molecules were also recently shown to allow controlled single-photon emission.

Quantum confined Stark effects of single dopant in polarized hemispherical quantum dot: Two-dimensional finite difference approach and Ritz-Hassé variation method

NASA Astrophysics Data System (ADS)

El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

2018-05-01

Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

NASA Astrophysics Data System (ADS)

Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.

2017-11-01

We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.

Quantum interference of independently generated telecom-band single photons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Monika; Altepeter, Joseph B.; Huang, Yu-Ping

We report on high-visibility quantum interference of independently generated telecom O-band (1310 nm) single photons using standard single-mode fibers. The experimental data are shown to agree well with the results of simulations using a comprehensive quantum multimode theory without the need for any fitting parameter.

Generating single microwave photons in a circuit.

PubMed

Houck, A A; Schuster, D I; Gambetta, J M; Schreier, J A; Johnson, B R; Chow, J M; Frunzio, L; Majer, J; Devoret, M H; Girvin, S M; Schoelkopf, R J

2007-09-20

Microwaves have widespread use in classical communication technologies, from long-distance broadcasts to short-distance signals within a computer chip. Like all forms of light, microwaves, even those guided by the wires of an integrated circuit, consist of discrete photons. To enable quantum communication between distant parts of a quantum computer, the signals must also be quantum, consisting of single photons, for example. However, conventional sources can generate only classical light, not single photons. One way to realize a single-photon source is to collect the fluorescence of a single atom. Early experiments measured the quantum nature of continuous radiation, and further advances allowed triggered sources of photons on demand. To allow efficient photon collection, emitters are typically placed inside optical or microwave cavities, but these sources are difficult to employ for quantum communication on wires within an integrated circuit. Here we demonstrate an on-chip, on-demand single-photon source, where the microwave photons are injected into a wire with high efficiency and spectral purity. This is accomplished in a circuit quantum electrodynamics architecture, with a microwave transmission line cavity that enhances the spontaneous emission of a single superconducting qubit. When the qubit spontaneously emits, the generated photon acts as a flying qubit, transmitting the quantum information across a chip. We perform tomography of both the qubit and the emitted photons, clearly showing that both the quantum phase and amplitude are transferred during the emission. Both the average power and voltage of the photon source are characterized to verify performance of the system. This single-photon source is an important addition to a rapidly growing toolbox for quantum optics on a chip.

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

PubMed

Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

2012-01-01

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

PubMed

Jegenyes, Nikoletta; Morassi, Martina; Chrétien, Pascal; Travers, Laurent; Lu, Lu; Julien, Francois H; Tchernycheva, Maria; Houzé, Frédéric; Gogneau, Noelle

2018-05-25

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm². These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN p-i-n homojunction solar cells

NASA Astrophysics Data System (ADS)

Wu, Shudong; Cheng, Liwen; Wang, Qiang

2018-07-01

We theoretically investigate the effects of the unintentional background concentration, indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic performance of InGaN p-i-n homojunction solar cells by solving the Poisson and steady-state continuity equations. The built-in electric field and carrier generation rate depend on the position within the i-layer. The collection efficiency, short circuit current density, open circuit voltage, fill factor, and conversion efficiency are found to depend strongly on the background concentration, thickness, indium composition, and defect density of the i-layer. With increasing the background concentration, the maximum thickness of field-bearing i-layer decreases, and the width of depletion region may become even too small to cover the whole i-layer, resulting in a serious decrease of the carrier collection. Some oscillations as a function of indium composition are found in the short circuit current density and conversion efficiency at high indium composition and low defect density due to the interference between the absorbance and the generation rate of carriers. The defect density degrades seriously the overall photovoltaic performance, and its effect on the photovoltaic performance is roughly seven orders of magnitude higher than the previously reported values [Feng et al., J. Appl. Phys. 108 (2010) 093118]. As a result, the high crystalline quality InGaN with high indium composition is a key factor in the device performance of III-nitride based solar cells.

Scanning gate imaging of two coupled quantum dots in single-walled carbon nanotubes.

PubMed

Zhou, Xin; Hedberg, James; Miyahara, Yoichi; Grutter, Peter; Ishibashi, Koji

2014-12-12

Two coupled single wall carbon nanotube quantum dots in a multiple quantum dot system were characterized by using a low temperature scanning gate microscopy (SGM) technique, at a temperature of 170 mK. The locations of single wall carbon nanotube quantum dots were identified by taking the conductance images of a single wall carbon nanotube contacted by two metallic electrodes. The single electron transport through single wall carbon nanotube multiple quantum dots has been observed by varying either the position or voltage bias of a conductive atomic force microscopy tip. Clear hexagonal patterns were observed in the region of the conductance images where only two sets of overlapping conductance rings are visible. The values of coupling capacitance over the total capacitance of the two dots, C(m)/C(1(2)) have been extracted to be 0.21 ∼ 0.27 and 0.23 ∼ 0.28, respectively. In addition, the interdot coupling (conductance peak splitting) has also been confirmed in both conductance image measurement and current-voltage curves. The results show that a SGM technique enables spectroscopic investigation of coupled quantum dots even in the presence of unexpected multiple quantum dots.

Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

PubMed

Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

2009-10-09

Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source.

PubMed

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-06-28

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source

PubMed Central

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-01-01

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication. PMID:27350159

Photonic quantum state transfer between a cold atomic gas and a crystal.

PubMed

Maring, Nicolas; Farrera, Pau; Kutluer, Kutlu; Mazzera, Margherita; Heinze, Georg; de Riedmatten, Hugues

2017-11-22

Interfacing fundamentally different quantum systems is key to building future hybrid quantum networks. Such heterogeneous networks offer capabilities superior to those of their homogeneous counterparts, as they merge the individual advantages of disparate quantum nodes in a single network architecture. However, few investigations of optical hybrid interconnections have been carried out, owing to fundamental and technological challenges such as wavelength and bandwidth matching of the interfacing photons. Here we report optical quantum interconnection of two disparate matter quantum systems with photon storage capabilities. We show that a quantum state can be transferred faithfully between a cold atomic ensemble and a rare-earth-doped crystal by means of a single photon at 1,552  nanometre telecommunication wavelength, using cascaded quantum frequency conversion. We demonstrate that quantum correlations between a photon and a single collective spin excitation in the cold atomic ensemble can be transferred to the solid-state system. We also show that single-photon time-bin qubits generated in the cold atomic ensemble can be converted, stored and retrieved from the crystal with a conditional qubit fidelity of more than 85 per cent. Our results open up the prospect of optically connecting quantum nodes with different capabilities and represent an important step towards the realization of large-scale hybrid quantum networks.

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar [Formula: see text] core-shell triangular nanostripe GaN/InGaN LEDs.

PubMed

Okur, Serdal; Rishinaramangalam, Ashwin K; Mishkat-Ul-Masabih, Saadat; Nami, Mohsen; Liu, Sheng; Brener, Igal; Brueck, Steven R J; Feezell, Daniel F

2018-06-08

We investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics in semipolar [Formula: see text] core-shell triangular nanostripe light-emitting diodes (TLEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) at various excitation energy densities. Using electroluminescence, photoluminescence, and cathodoluminescence measurements, we verify the origins of the broad emission spectra from the nanostructures and confirm that localized regions of high-indium-content InGaN exist along the apex of the nanostructures. Spectrally resolved IQE measurements are then performed, with the spectra integrated from 400-450 nm and 450-500 nm to obtain the IQE of the QWs mainly near the sidewalls and apex of the TLEDs, respectively. TDPL and TRPL are used to decouple the radiative and non-radiative carrier lifetimes for different regions of the emission spectra. We observe that the IQE is higher for the spectral region between 450 nm and 500 nm compared to the IQE between 400 and 450 nm. This result is in contrast to the typical observation that the IQE of planar GaN-based LEDs is lower for longer wavelengths (i.e., higher indium contents). We also observe a longer non-radiative recombination lifetime for the longer wavelength portion of the spectrum. Several explanations are proposed for the improved IQE and longer non-radiative lifetime observed near the apex of the nanostructures. The results show that nanostructures may be leveraged to design more efficient green LEDs, potentially addressing a long-standing challenge in GaN-based materials.

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar (10\\bar{1}1) core-shell triangular nanostripe GaN/InGaN LEDs

NASA Astrophysics Data System (ADS)

Okur, Serdal; Rishinaramangalam, Ashwin K.; Mishkat-Ul-Masabih, Saadat; Nami, Mohsen; Liu, Sheng; Brener, Igal; Brueck, Steven R. J.; Feezell, Daniel F.

2018-06-01

We investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics in semipolar (10\\bar{1}1) core–shell triangular nanostripe light-emitting diodes (TLEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) at various excitation energy densities. Using electroluminescence, photoluminescence, and cathodoluminescence measurements, we verify the origins of the broad emission spectra from the nanostructures and confirm that localized regions of high-indium-content InGaN exist along the apex of the nanostructures. Spectrally resolved IQE measurements are then performed, with the spectra integrated from 400–450 nm and 450–500 nm to obtain the IQE of the QWs mainly near the sidewalls and apex of the TLEDs, respectively. TDPL and TRPL are used to decouple the radiative and non-radiative carrier lifetimes for different regions of the emission spectra. We observe that the IQE is higher for the spectral region between 450 nm and 500 nm compared to the IQE between 400 and 450 nm. This result is in contrast to the typical observation that the IQE of planar GaN-based LEDs is lower for longer wavelengths (i.e., higher indium contents). We also observe a longer non-radiative recombination lifetime for the longer wavelength portion of the spectrum. Several explanations are proposed for the improved IQE and longer non-radiative lifetime observed near the apex of the nanostructures. The results show that nanostructures may be leveraged to design more efficient green LEDs, potentially addressing a long-standing challenge in GaN-based materials.

Complete quantum control of a single quantum dot spin using ultrafast optical pulses.

PubMed

Press, David; Ladd, Thaddeus D; Zhang, Bingyang; Yamamoto, Yoshihisa

2008-11-13

A basic requirement for quantum information processing systems is the ability to completely control the state of a single qubit. For qubits based on electron spin, a universal single-qubit gate is realized by a rotation of the spin by any angle about an arbitrary axis. Driven, coherent Rabi oscillations between two spin states can be used to demonstrate control of the rotation angle. Ramsey interference, produced by two coherent spin rotations separated by a variable time delay, demonstrates control over the axis of rotation. Full quantum control of an electron spin in a quantum dot has previously been demonstrated using resonant radio-frequency pulses that require many spin precession periods. However, optical manipulation of the spin allows quantum control on a picosecond or femtosecond timescale, permitting an arbitrary rotation to be completed within one spin precession period. Recent work in optical single-spin control has demonstrated the initialization of a spin state in a quantum dot, as well as the ultrafast manipulation of coherence in a largely unpolarized single-spin state. Here we demonstrate complete coherent control over an initialized electron spin state in a quantum dot using picosecond optical pulses. First we vary the intensity of a single optical pulse to observe over six Rabi oscillations between the two spin states; then we apply two sequential pulses to observe high-contrast Ramsey interference. Such a two-pulse sequence realizes an arbitrary single-qubit gate completed on a picosecond timescale. Along with the spin initialization and final projective measurement of the spin state, these results demonstrate a complete set of all-optical single-qubit operations.

What are single photons good for?

NASA Astrophysics Data System (ADS)

Sangouard, Nicolas; Zbinden, Hugo

2012-10-01

In a long-held preconception, photons play a central role in present-day quantum technologies. But what are sources producing photons one by one good for precisely? Well, in opposition to what many suggest, we show that single-photon sources are not helpful for point to point quantum key distribution because faint laser pulses do the job comfortably. However, there is no doubt about the usefulness of sources producing single photons for future quantum technologies. In particular, we show how single-photon sources could become the seed of a revolution in the framework of quantum communication, making the security of quantum key distribution device-independent or extending quantum communication over many hundreds of kilometers. Hopefully, these promising applications will provide a guideline for researchers to develop more and more efficient sources, producing narrowband, pure and indistinguishable photons at appropriate wavelengths.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Heralded noiseless amplification for single-photon entangled state with polarization feature

NASA Astrophysics Data System (ADS)

Wang, Dan-Dan; Jin, Yu-Yu; Qin, Sheng-Xian; Zu, Hao; Zhou, Lan; Zhong, Wei; Sheng, Yu-Bo

2018-03-01

Heralded noiseless amplification is a promising method to overcome the transmission photon loss in practical noisy quantum channel and can effectively lengthen the quantum communication distance. Single-photon entanglement is an important resource in current quantum communications. Here, we construct two single-photon-assisted heralded noiseless amplification protocols for the single-photon two-mode entangled state and single-photon three-mode W state, respectively, where the single-photon qubit has an arbitrary unknown polarization feature. After the amplification, the fidelity of the single-photon entangled state can be increased, while the polarization feature of the single-photon qubit can be well remained. Both the two protocols only require the linear optical elements, so that they can be realized under current experimental condition. Our protocols may be useful in current and future quantum information processing.

Zero-phonon-line emission of single molecules for applications in quantum information processing

NASA Astrophysics Data System (ADS)

Kiraz, Alper; Ehrl, M.; Mustecaplioglu, O. E.; Hellerer, T.; Brauchle, C.; Zumbusch, A.

2005-07-01

A single photon source which generates transform limited single photons is highly desirable for applications in quantum optics. Transform limited emission guarantees the indistinguishability of the emitted single photons. This, in turn brings groundbreaking applications in linear optics quantum information processing within an experimental reach. Recently, self-assembled InAs quantum dots and trapped atoms have successfully been demonstrated as such sources for highly indistinguishable single photons. Here, we demonstrate that nearly transform limited zero-phonon-line (ZPL) emission from single molecules can be obtained by using vibronic excitation. Furthermore we report the results of coincidence detection experiments at the output of a Michelson-type interferometer. These experiments reveal Hong-Ou-Mandel correlations as a proof of the indistinguishability of the single photons emitted consecutively from a single molecule. Therefore, single molecules constitute an attractive alternative to single InAs quantum dots and trapped atoms for applications in linear optics quantum information processing. Experiments were performed with a home-built confocal microscope keeping the sample in a superfluid liquid Helium bath at 1.4K. We investigated terrylenediimide (TDI) molecules highly diluted in hexadecane (Shpol'skii matrix). A continuous wave single mode dye laser was used for excitation of vibronic transitions of individual molecules. From the integral fluorescence, the ZPL of single molecules was selected with a spectrally narrow interference filter. The ZPL emission was then sent to a scanning Fabry-Perot interferometer for linewidth measurements or a Michelson-type interferometer for coincidence detection.

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rengstl, U.; Schwartz, M.; Herzog, T.

2015-07-13

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, wheremore » the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.« less

EDITORIAL: Progress in quantum technology: one photon at a time Progress in quantum technology: one photon at a time

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-07-01

Technological developments sparked by quantum mechanics and wave-particle duality are still gaining ground over a hundred years after the theories were devised. While the impact of the theories in fundamental research, philosophy and even art and literature is widely appreciated, the implications in device innovations continue to breed potential. Applications inspired by these concepts include quantum computation and quantum cryptography protocols based on single photons, among many others. In this issue, researchers in Germany and the US report a step towards precisely triggered single-photon sources driven by surface acoustic waves (SAWs) [1]. The work brings technology based on quantum mechanics yet another step closer to practical device reality. Generation of single 'antibunched' photons has been one of the key challenges to progress in quantum information processing and communication. Researchers from Toshiba and Cambridge University in the UK recently reported what they described as 'the first electrically driven single-photon source capable of emitting indistinguishable photons' [2]. Single-photon sources have been reported previously [3]. However the approach demonstrated by Shields and colleagues allows electrical control, which is particularly useful for implementing in compact devices. The researchers used a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode to demonstrate interference between single photons. They also present a complete theory based on the interference of photons with a Lorentzian spectrum, which they compare with both continuous-wave and pulsed experiments. The application of SAWs in achieving precisely triggered single-photon sources develops the work of researchers in Germany in the late 1990s [4]. Surface acoustic waves travel like sound waves, but are characterized by an amplitude that typically decays exponentially with depth into the substrate. As Rocke and colleagues demonstrated, they can be used to dissociate an optically excited exciton and spatially separate the electron and hole, thereby increasing the radiative lifetime by orders of magnitude. The interesting behaviour of SAWs has led to studies towards a number of other applications including sensing [5-7], synthesis and nanoassembly [8]. For applications in single-photon sources, the electron-hole pairs are transported by the SAW to a quantum dot where they recombine emitting a single photon. However, so far various limiting factors in the system, such as the low quality of the quantum dots used leading to multiple-exciton recombinations, have hindered potential applications of the system as a single-photon source. Control over high-quality quantum-dot self-assembly is constantly improving. Researchers at the University of California at Berkeley and Harvard University in the US report the ability to successfully position a small number of colloidal quantum dots to within less than 100 nm accuracy on metallic surfaces [9]. They use single-stranded DNA both to act as an anchor to the gold or silver substrates and to selectively bind to the quantum dots, allowing programmed assembly of quantum dots on plasmonic structures. More recently still, researchers in Germany have reported how they can controllably reduce the density of self-assembled InP quantum dots by cyclic deposition with growth interruptions [10]. The impressive control has great potential for quantum emitter use. In this issue, Völk, Krenner and colleagues use an alternative approach to demonstrate how they can improve the performance of single-photon sources using SAWs. They use an optimized system of isolated self-assembled quantum posts in a quantum-well structure and inject the carriers at a distance from the posts where recombination and emission take place [3]. The SAW dissociates the electron-hole pairs and transports them to the quantum posts, so the two carrier types arrive at the quantum post with a set time delay. Other approaches, such as Coulomb blockade ones, have struggled to achieve the sequential injection of the carriers

Single Quantum Dot with Microlens and 3D-Printed Micro-objective as Integrated Bright Single-Photon Source

PubMed Central

2017-01-01

Integrated single-photon sources with high photon-extraction efficiency are key building blocks for applications in the field of quantum communications. We report on a bright single-photon source realized by on-chip integration of a deterministic quantum dot microlens with a 3D-printed multilens micro-objective. The device concept benefits from a sophisticated combination of in situ 3D electron-beam lithography to realize the quantum dot microlens and 3D femtosecond direct laser writing for creation of the micro-objective. In this way, we obtain a high-quality quantum device with broadband photon-extraction efficiency of (40 ± 4)% and high suppression of multiphoton emission events with g(2)(τ = 0) < 0.02. Our results highlight the opportunities that arise from tailoring the optical properties of quantum emitters using integrated optics with high potential for the further development of plug-and-play fiber-coupled single-photon sources. PMID:28670600

Quantum limit of heat flow across a single electronic channel.

PubMed

Jezouin, S; Parmentier, F D; Anthore, A; Gennser, U; Cavanna, A; Jin, Y; Pierre, F

2013-11-01

Quantum physics predicts that there is a fundamental maximum heat conductance across a single transport channel and that this thermal conductance quantum, G(Q), is universal, independent of the type of particles carrying the heat. Such universality, combined with the relationship between heat and information, signals a general limit on information transfer. We report on the quantitative measurement of the quantum-limited heat flow for Fermi particles across a single electronic channel, using noise thermometry. The demonstrated agreement with the predicted G(Q) establishes experimentally this basic building block of quantum thermal transport. The achieved accuracy of below 10% opens access to many experiments involving the quantum manipulation of heat.

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Fused Silica Ion Trap Chip with Efficient Optical Collection System for Timekeeping, Sensing, and Emulation

DTIC Science & Technology

2015-01-22

applications in fast single photon sources, quantum repeater circuitry, and high fidelity remote entanglement of atoms for quantum information protocols. We...fluorescence for motion/force sensors through Doppler velocimetry; and for the efficient collection of single photons from trapped ions for...Doppler velocimetry; and for the efficient collection of single photons from trapped ions for applications in fast single photon sources, quantum

Single-photon three-qubit quantum logic using spatial light modulators.

PubMed

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

NASA Astrophysics Data System (ADS)

Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

2017-12-01

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Strong suppression of shot noise in a feedback-controlled single-electron transistor

NASA Astrophysics Data System (ADS)

Wagner, Timo; Strasberg, Philipp; Bayer, Johannes C.; Rugeramigabo, Eddy P.; Brandes, Tobias; Haug, Rolf J.

2017-03-01

Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements, but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but progress has recently been made in the control of solid-state qubits as well. In quantum transport only a few active and passive feedback experiments have been realized on the level of single electrons, although theoretical proposals exist. Here we demonstrate the suppression of shot noise in a single-electron transistor using an exclusively electronic closed-loop feedback to monitor and adjust the counting statistics. With increasing feedback response we observe a stronger suppression and faster freezing of charge current fluctuations. Our technique is analogous to the generation of squeezed light with in-loop photodetection as used in quantum optics. Sub-Poisson single-electron sources will pave the way for high-precision measurements in quantum transport similar to optical or optomechanical equivalents.

On-chip interference of single photons from an embedded quantum dot and an external laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Bentham, C.; O'Hara, J.

2016-06-20

In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler.more » This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.« less

Spin properties of charged Mn-doped quantum dota)

NASA Astrophysics Data System (ADS)

Besombes, L.; Léger, Y.; Maingault, L.; Mariette, H.

2007-04-01

The optical properties of individual quantum dots doped with a single Mn atom and charged with a single carrier are analyzed. The emission of the neutral, negatively and positively charged excitons coupled with a single magnetic atom (Mn) are observed in the same individual quantum dot. The spectrum of the charged excitons in interaction with the Mn atom shows a rich pattern attributed to a strong anisotropy of the hole-Mn exchange interaction slightly perturbed by a small valence-band mixing. The anisotropy in the exchange interaction between a single magnetic atom and a single hole is revealed by comparing the emission of a charged Mn-doped quantum dot in longitudinal and transverse magnetic field.

Generation of Single Photons and Entangled Photon Pairs from a Quantum Dot

NASA Astrophysics Data System (ADS)

Yamamoto, Y.; Pelton, M.; Santori, C.; Solomon, G. S.

2002-10-01

Current quantum cryptography systems are limited by the Poissonian photon statistics of a standard light source: a security loophole is opened up by the possibility of multiple-photon pulses. By replacing the source with a single-photon emitter, transmission rates of secure information can be improved. A single photon source is also essential to implement a linear optics quantum computer. We have investigated the use of single self-assembled InAs/GaAs quantum dots as such single-photon sources, and have seen a hundred-fold reduction in the multi-photon probability as compared to Poissonian pulses. An extension of our experiment should also allow for the generation of triggered, polarizationentangled photon pairs.

Interferometric Quantum-Nondemolition Single-Photon Detectors

NASA Technical Reports Server (NTRS)

Kok, Peter; Lee, Hwang; Dowling, Jonathan

2007-01-01

Two interferometric quantum-nondemolition (QND) devices have been proposed: (1) a polarization-independent device and (2) a polarization-preserving device. The prolarization-independent device works on an input state of up to two photons, whereas the polarization-preserving device works on a superposition of vacuum and single- photon states. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode would also be populated by a single photon. Like other QND devices, the proposed devices are potentially useful for a variety of applications, including such areas of NASA interest as quantum computing, quantum communication, detection of gravity waves, as well as pedagogical demonstrations of the quantum nature of light. Many protocols in quantum computation and quantum communication require the possibility of detecting a photon without destroying it. The only prior single- photon-detecting QND device is based on quantum electrodynamics in a resonant cavity and, as such, it depends on the photon frequency. Moreover, the prior device can distinguish only between one photon and no photon. The proposed interferometric QND devices would not depend on frequency and could distinguish between (a) one photon and (b) zero or two photons. The first proposed device is depicted schematically in Figure 1. The input electromagnetic mode would be a superposition of a zero-, a one-, and a two-photon quantum state. The overall function of the device would be to probabilistically generate a unique detector output only when its input electromagnetic mode was populated by a single photon, in which case its output mode also would be populated by a single photon.

Spectroscopy of Single AlInAs Quantum Dots

NASA Astrophysics Data System (ADS)

Derebezov, I. A.; Gaisler, A. V.; Gaisler, V. A.; Dmitriev, D. V.; Toropov, A. I.; Kozhukhov, A. S.; Shcheglov, D. V.; Latyshev, A. V.; Aseev, A. L.

2018-03-01

A system of quantum dots based on Al x In1- x As/Al y Ga1- y As solid solutions is investigated. The use of Al x In1- x As wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1- x As single quantum dots grown by the Stranski-Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown-Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1- x As quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on Al x In1- x As quantum dots.

Observation of entanglement between a quantum dot spin and a single photon.

PubMed

Gao, W B; Fallahi, P; Togan, E; Miguel-Sanchez, J; Imamoglu, A

2012-11-15

Entanglement has a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, a main challenge is the efficient generation of entanglement between stationary (spin) and propagating (photon) quantum bits. Here we report the observation of quantum entanglement between a semiconductor quantum dot spin and the colour of a propagating optical photon. The demonstration of entanglement relies on the use of fast, single-photon detection, which allows us to project the photon into a superposition of red and blue frequency components. Our results extend the previous demonstrations of single-spin/single-photon entanglement in trapped ions, neutral atoms and nitrogen-vacancy centres to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. As a result of its fast optical transitions and favourable selection rules, the scheme we implement could in principle generate nearly deterministic entangled spin-photon pairs at a rate determined ultimately by the high spontaneous emission rate. Our observation constitutes a first step towards implementation of a quantum network with nodes consisting of semiconductor spin quantum bits.

Simple and Efficient Single Photon Filter for a Rb-based Quantum Memory

NASA Astrophysics Data System (ADS)

Stack, Daniel; Li, Xiao; Quraishi, Qudsia

2015-05-01

Distribution of entangled quantum states over significant distances is important to the development of future quantum technologies such as long-distance cryptography, networks of atomic clocks, distributed quantum computing, etc. Long-lived quantum memories and single photons are building blocks for systems capable of realizing such applications. The ability to store and retrieve quantum information while filtering unwanted light signals is critical to the operation of quantum memories based on neutral-atom ensembles. We report on an efficient frequency filter which uses a glass cell filled with 85Rb vapor to attenuate noise photons by an order of magnitude with little loss to the single photons associated with the operation of our cold 87Rb quantum memory. An Ar buffer gas is required to differentiate between signal and noise photons or similar statement. Our simple, passive filter requires no optical pumping or external frequency references and provides an additional 18 dB attenuation of our pump laser for every 1 dB loss of the single photon signal. We observe improved non-classical correlations and our data shows that the addition of a frequency filter increases the non-classical correlations and readout efficiency of our quantum memory by ~ 35%.

Single photon quantum cryptography.

PubMed

Beveratos, Alexios; Brouri, Rosa; Gacoin, Thierry; Villing, André; Poizat, Jean-Philippe; Grangier, Philippe

2002-10-28

We report the full implementation of a quantum cryptography protocol using a stream of single photon pulses generated by a stable and efficient source operating at room temperature. The single photon pulses are emitted on demand by a single nitrogen-vacancy color center in a diamond nanocrystal. The quantum bit error rate is less that 4.6% and the secure bit rate is 7700 bits/s. The overall performances of our system reaches a domain where single photons have a measurable advantage over an equivalent system based on attenuated light pulses.

A single-atom quantum memory.

PubMed

Specht, Holger P; Nölleke, Christian; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

2011-05-12

The faithful storage of a quantum bit (qubit) of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must be able to receive and recreate the photonic qubit; additionally, it must store an unknown quantum state of light better than any classical device. So far, these two requirements have been met only by ensembles of material particles that store the information in collective excitations. Recent developments, however, have paved the way for an approach in which the information exchange occurs between single quanta of light and matter. This single-particle approach allows the material qubit to be addressed, which has fundamental advantages for realistic implementations. First, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection; this can be used to combat inevitable losses and finite efficiencies. Second, it allows for individual qubit manipulations, opening up avenues for in situ processing of the stored quantum information. Here we demonstrate the most fundamental implementation of such a quantum memory, by mapping arbitrary polarization states of light into and out of a single atom trapped inside an optical cavity. The memory performance is tested with weak coherent pulses and analysed using full quantum process tomography. The average fidelity is measured to be 93%, and low decoherence rates result in qubit coherence times exceeding 180  microseconds. This makes our system a versatile quantum node with excellent prospects for applications in optical quantum gates and quantum repeaters.

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

PubMed Central

Branny, Artur; Kumar, Santosh; Proux, Raphaël; Gerardot, Brian D

2017-01-01

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. PMID:28530219

Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sergent, S.; Kako, S.; Bürger, M.

2014-10-06

We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T.

2015-08-21

The electronic structures of short period mGaN/nGa{sub y}Al{sub 1−y}N and mIn{sub y}Ga{sub 1-y}N/nGaN superlattices grown along the wurtzite c axis have been calculated for different alloy compositions y and various small numbers m of well- and n of barrier-monolayers. The general trends in gap behavior can, to a large extent, be related to the strength of the internal electric field, E, in the GaN and InGaN quantum wells. In the GaN/GaAlN superlattices, E reaches 4 MV/cm, while in the InGaN/GaN superlattices, values as high as E ≈ 6.5 MV/cm are found. The strong electric fields are caused by spontaneous and piezoelectric polarizations,more » the latter contribution dominating in InGaN/GaN superlattices. The influence of different arrangements of In atoms (indium clustering) on the band gap values in InGaN/GaN superlattices is examined.« less

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

NASA Astrophysics Data System (ADS)

Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping

2014-06-01

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance.

Towards quantum networks of single spins: analysis of a quantum memory with an optical interface in diamond.

PubMed

Blok, M S; Kalb, N; Reiserer, A; Taminiau, T H; Hanson, R

2015-01-01

Single defect centers in diamond have emerged as a powerful platform for quantum optics experiments and quantum information processing tasks. Connecting spatially separated nodes via optical photons into a quantum network will enable distributed quantum computing and long-range quantum communication. Initial experiments on trapped atoms and ions as well as defects in diamond have demonstrated entanglement between two nodes over several meters. To realize multi-node networks, additional quantum bit systems that store quantum states while new entanglement links are established are highly desirable. Such memories allow for entanglement distillation, purification and quantum repeater protocols that extend the size, speed and distance of the network. However, to be effective, the memory must be robust against the entanglement generation protocol, which typically must be repeated many times. Here we evaluate the prospects of using carbon nuclear spins in diamond as quantum memories that are compatible with quantum networks based on single nitrogen vacancy (NV) defects in diamond. We present a theoretical framework to describe the dephasing of the nuclear spins under repeated generation of NV spin-photon entanglement and show that quantum states can be stored during hundreds of repetitions using typical experimental coupling parameters. This result demonstrates that nuclear spins with weak hyperfine couplings are promising quantum memories for quantum networks.

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

PubMed

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

NASA Astrophysics Data System (ADS)

Kucukgok, Bahadir; Wu, Xuewang; Wang, Xiaojia; Liu, Zhiqiang; Ferguson, Ian T.; Lu, Na

2016-02-01

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

NASA Astrophysics Data System (ADS)

Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

2018-03-01

We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

Long-Distance Single Photon Transmission from a Trapped Ion via Quantum Frequency Conversion

NASA Astrophysics Data System (ADS)

Walker, Thomas; Miyanishi, Koichiro; Ikuta, Rikizo; Takahashi, Hiroki; Vartabi Kashanian, Samir; Tsujimoto, Yoshiaki; Hayasaka, Kazuhiro; Yamamoto, Takashi; Imoto, Nobuyuki; Keller, Matthias

2018-05-01

Trapped atomic ions are ideal single photon emitters with long-lived internal states which can be entangled with emitted photons. Coupling the ion to an optical cavity enables the efficient emission of single photons into a single spatial mode and grants control over their temporal shape. These features are key for quantum information processing and quantum communication. However, the photons emitted by these systems are unsuitable for long-distance transmission due to their wavelengths. Here we report the transmission of single photons from a single 40Ca+ ion coupled to an optical cavity over a 10 km optical fiber via frequency conversion from 866 nm to the telecom C band at 1530 nm. We observe nonclassical photon statistics of the direct cavity emission, the converted photons, and the 10 km transmitted photons, as well as the preservation of the photons' temporal shape throughout. This telecommunication-ready system can be a key component for long-distance quantum communication as well as future cloud quantum computation.

Room temperature single photon source using fiber-integrated hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Vogl, Tobias; Lu, Yuerui; Lam, Ping Koy

2017-07-01

Single photons are a key resource for quantum optics and optical quantum information processing. The integration of scalable room temperature quantum emitters into photonic circuits remains to be a technical challenge. Here we utilize a defect center in hexagonal boron nitride (hBN) attached by Van der Waals force onto a multimode fiber as a single photon source. We perform an optical characterization of the source in terms of spectrum, state lifetime, power saturation and photostability. A special feature of our source is that it allows for easy switching between fiber-coupled and free space single photon generation modes. In order to prove the quantum nature of the emission we measure the second-order correlation function {{g}(2)}≤ft(τ \\right) . For both fiber-coupled and free space emission, the {{g}(2)}≤ft(τ \\right) dips below 0.5 indicating operation in the single photon regime. The results so far demonstrate the feasibility of 2D material single photon sources for scalable photonic quantum information processing.

Quantum Yield Heterogeneity among Single Nonblinking Quantum Dots Revealed by Atomic Structure-Quantum Optics Correlation

DOE PAGES

Orfield, Noah J.; McBride, James R.; Wang, Feng; ...

2016-02-05

Physical variations in colloidal nanostructures give rise to heterogeneity in expressed optical behavior. This correlation between nanoscale structure and function demands interrogation of both atomic structure and photophysics at the level of single nanostructures to be fully understood. In this paper, by conducting detailed analyses of fine atomic structure, chemical composition, and time-resolved single-photon photoluminescence data for the same individual nanocrystals, we reveal inhomogeneity in the quantum yields of single nonblinking “giant” CdSe/CdS core/shell quantum dots (g-QDs). We find that each g-QD possesses distinctive single exciton and biexciton quantum yields that result mainly from variations in the degree of charging,more » rather than from volume or structure inhomogeneity. We further establish that there is a very limited nonemissive “dark” fraction (<2%) among the studied g-QDs and present direct evidence that the g-QD core must lack inorganic passivation for the g-QD to be “dark”. Finally and therefore, in contrast to conventional QDs, ensemble photoluminescence quantum yield is principally defined by charging processes rather than the existence of dark g-QDs.« less

Single-hidden-layer feed-forward quantum neural network based on Grover learning.

PubMed

Liu, Cheng-Yi; Chen, Chein; Chang, Ching-Ter; Shih, Lun-Min

2013-09-01

In this paper, a novel single-hidden-layer feed-forward quantum neural network model is proposed based on some concepts and principles in the quantum theory. By combining the quantum mechanism with the feed-forward neural network, we defined quantum hidden neurons and connected quantum weights, and used them as the fundamental information processing unit in a single-hidden-layer feed-forward neural network. The quantum neurons make a wide range of nonlinear functions serve as the activation functions in the hidden layer of the network, and the Grover searching algorithm outstands the optimal parameter setting iteratively and thus makes very efficient neural network learning possible. The quantum neuron and weights, along with a Grover searching algorithm based learning, result in a novel and efficient neural network characteristic of reduced network, high efficient training and prospect application in future. Some simulations are taken to investigate the performance of the proposed quantum network and the result show that it can achieve accurate learning. Copyright © 2013 Elsevier Ltd. All rights reserved.

Generation, storage, and retrieval of nonclassical states of light using atomic ensembles

NASA Astrophysics Data System (ADS)

Eisaman, Matthew D.

This thesis presents the experimental demonstration of several novel methods for generating, storing, and retrieving nonclassical states of light using atomic ensembles, and describes applications of these methods to frequency-tunable single-photon generation, single-photon memory, quantum networks, and long-distance quantum communication. We first demonstrate emission of quantum-mechanically correlated pulses of light with a time delay between the pulses that is coherently controlled by utilizing 87Rb atoms. The experiment is based on Raman scattering, which produces correlated pairs of excited atoms and photons, followed by coherent conversion of the atomic states into a different photon field after a controllable delay. We then describe experiments demonstrating a novel approach for conditionally generating nonclassical pulses of light with controllable photon numbers, propagation direction, timing, and pulse shapes. We observe nonclassical correlations in relative photon number between correlated pairs of photons, and create few-photon light pulses with sub-Poissonian photon-number statistics via conditional detection on one field of the pair. Spatio-temporal control over the pulses is obtained by exploiting long-lived coherent memory for photon states and electromagnetically induced transparency (EIT) in an optically dense atomic medium. Finally, we demonstrate the use of EIT for the controllable generation, transmission, and storage of single photons with tunable frequency, timing, and bandwidth. To this end, we study the interaction of single photons produced in a "source" ensemble of 87Rb atoms at room temperature with another "target" ensemble. This allows us to simultaneously probe the spectral and quantum statistical properties of narrow-bandwidth single-photon pulses, revealing that their quantum nature is preserved under EIT propagation and storage. We measure the time delay associated with the reduced group velocity of the single-photon pulses and report observations of their storage and retrieval. Together these experiments utilize atomic ensembles to realize a narrow-bandwidth single-photon source, single-photon memory that preserves the quantum nature of the single photons, and a primitive quantum network comprised of two atomic-ensemble quantum memories connected by a single photon in an optical fiber. Each of these experimental demonstrations represents an essential element for the realization of long-distance quantum communication.

Two-Way Communication with a Single Quantum Particle.

PubMed

Del Santo, Flavio; Dakić, Borivoje

2018-02-09

In this Letter we show that communication when restricted to a single information carrier (i.e., single particle) and finite speed of propagation is fundamentally limited for classical systems. On the other hand, quantum systems can surpass this limitation. We show that communication bounded to the exchange of a single quantum particle (in superposition of different spatial locations) can result in "two-way signaling," which is impossible in classical physics. We quantify the discrepancy between classical and quantum scenarios by the probability of winning a game played by distant players. We generalize our result to an arbitrary number of parties and we show that the probability of success is asymptotically decreasing to zero as the number of parties grows, for all classical strategies. In contrast, quantum strategy allows players to win the game with certainty.

Two-Way Communication with a Single Quantum Particle

NASA Astrophysics Data System (ADS)

Del Santo, Flavio; Dakić, Borivoje

2018-02-01

In this Letter we show that communication when restricted to a single information carrier (i.e., single particle) and finite speed of propagation is fundamentally limited for classical systems. On the other hand, quantum systems can surpass this limitation. We show that communication bounded to the exchange of a single quantum particle (in superposition of different spatial locations) can result in "two-way signaling," which is impossible in classical physics. We quantify the discrepancy between classical and quantum scenarios by the probability of winning a game played by distant players. We generalize our result to an arbitrary number of parties and we show that the probability of success is asymptotically decreasing to zero as the number of parties grows, for all classical strategies. In contrast, quantum strategy allows players to win the game with certainty.

Quantum routing of single optical photons with a superconducting flux qubit

NASA Astrophysics Data System (ADS)

Xia, Keyu; Jelezko, Fedor; Twamley, Jason

2018-05-01

Interconnecting optical photons with superconducting circuits is a challenging problem but essential for building long-range superconducting quantum networks. We propose a hybrid quantum interface between the microwave and optical domains where the propagation of a single-photon pulse along a nanowaveguide is controlled in a coherent way by tuning the electromagnetically induced transparency window with the quantum state of a flux qubit mediated by the spin in a nanodiamond. The qubit can route a single-photon pulse using the nanodiamond into a quantum superposition of paths without the aid of an optical cavity—simplifying the setup. By preparing the flux qubit in a superposition state our cavityless scheme creates a hybrid state-path entanglement between a flying single optical photon and a static superconducting qubit.

Linear optical quantum computing in a single spatial mode.

PubMed

Humphreys, Peter C; Metcalf, Benjamin J; Spring, Justin B; Moore, Merritt; Jin, Xian-Min; Barbieri, Marco; Kolthammer, W Steven; Walmsley, Ian A

2013-10-11

We present a scheme for linear optical quantum computing using time-bin-encoded qubits in a single spatial mode. We show methods for single-qubit operations and heralded controlled-phase (cphase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn [Nature (London) 409, 46 (2001)] scheme. Our protocol is suited to currently available photonic devices and ideally allows arbitrary numbers of qubits to be encoded in the same spatial mode, demonstrating the potential for time-frequency modes to dramatically increase the quantum information capacity of fixed spatial resources. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84±0.07.

Compact quantum gates on electron-spin qubits assisted by diamond nitrogen-vacancy centers inside cavities

NASA Astrophysics Data System (ADS)

Wei, Hai-Rui; Deng, Fu-Guo

2013-10-01

Constructing compact quantum circuits for universal quantum gates on solid-state systems is crucial for quantum computing. We present some compact quantum circuits for a deterministic solid-state quantum computing, including the cnot, Toffoli, and Fredkin gates on the diamond NV centers confined inside cavities, achieved by some input-output processes of a single photon. Our quantum circuits for these universal quantum gates are simple and economic. Moreover, additional electron qubits are not employed, but only a single-photon medium. These gates have a long coherent time. We discuss the feasibility of these universal solid-state quantum gates, concluding that they are feasible with current technology.

Theory of single-photon detectors employing smart strategies of detection

NASA Astrophysics Data System (ADS)

Silva, João Batista Rosa; Ramos, Rubens Viana

2005-11-01

Single-photon detectors have become more important with the advent of set-ups for optical communication using single-photon pulses, mainly quantum key distribution. The performance of quantum key distribution systems depends strongly on the performance of single-photon detectors. In this paper, aiming to overcome the afterpulsing that limits strongly the maximal transmission rate of quantum key distribution systems, three smart strategies for single-photon detection are discussed using analytical and numerical procedures. The three strategies are: hold-off time conditioned to avalanche presence, termed the Norwegian strategy, using one avalanche photodiode, using two raffled avalanche photodiodes and using two switched avalanche photodiodes. Finally we give examples using these strategies in a quantum key distribution set-up.

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar.

PubMed

Ding, Xing; He, Yu; Duan, Z-C; Gregersen, Niels; Chen, M-C; Unsleber, S; Maier, S; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2016-01-15

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire.

PubMed

Li, Qiang; Wei, Hong; Xu, Hongxing

2015-12-09

The interactions between surface plasmons (SPs) in metal nanostructures and excitons in quantum emitters (QEs) lead to many interesting phenomena and potential applications that are strongly dependent on the quantum yield of SPs. The difficulty in distinguishing all the possible exciton recombination channels hinders the experimental determination of SP quantum yield. Here, we experimentally measured for the first time the quantum yield of single SPs generated by the exciton-plasmon coupling in a system composed of a single quantum dot and a silver nanowire (NW). By utilizing the SP guiding property of the NW, the decay rates of all the exciton recombination channels, i.e., direct free space radiation channel, SP generation channel, and nonradiative damping channel, are quantitatively obtained. It is determined that the optimum emitter-NW coupling distance for the largest SP quantum yield is about 10 nm, resulting from the different distance-dependent decay rates of the three channels. These results are important for manipulating the coupling between plasmonic nanostructures and QEs and developing on-chip quantum plasmonic devices for potential nanophotonic and quantum information applications.

Quantum optics. All-optical routing of single photons by a one-atom switch controlled by a single photon.

PubMed

Shomroni, Itay; Rosenblum, Serge; Lovsky, Yulia; Bechler, Orel; Guendelman, Gabriel; Dayan, Barak

2014-08-22

The prospect of quantum networks, in which quantum information is carried by single photons in photonic circuits, has long been the driving force behind the effort to achieve all-optical routing of single photons. We realized a single-photon-activated switch capable of routing a photon from any of its two inputs to any of its two outputs. Our device is based on a single atom coupled to a fiber-coupled, chip-based microresonator. A single reflected control photon toggles the switch from high reflection (R ~ 65%) to high transmission (T ~ 90%), with an average of ~1.5 control photons per switching event (~3, including linear losses). No additional control fields are required. The control and target photons are both in-fiber and practically identical, making this scheme compatible with scalable architectures for quantum information processing. Copyright © 2014, American Association for the Advancement of Science.

Size-Dependent Biexciton Quantum Yields and Carrier Dynamics of Quasi-Two-Dimensional Core/Shell Nanoplatelets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Xuedan; Diroll, Benjamin T.; Cho, Wooje

Quasi-two-dimensional nanoplatelets (NPLs) possess fundamentally different excitonic properties from zero-dimensional quantum dots. We study lateral size-dependent photon emission statistics and carrier dynamics of individual NPLs using second-order photon correlation (g( 2)(τ)) spectroscopy and photoluminescence (PL) intensity-dependent lifetime analysis. Room-temperature radiative lifetimes of NPLs can be derived from maximum PL intensity periods in PL time traces. It first decreases with NPL lateral size and then stays constant, deviating from the electric dipole approximation. Analysis of the PL time traces further reveals that the single exciton quantum yield in NPLs decreases with NPL lateral size and increases with protecting shell thickness, indicatingmore » the importance of surface passivation on NPL emission quality. Second-order photon correlation (g( 2)(τ)) studies of single NPLs show that the biexciton quantum yield is strongly dependent on the lateral size and single exciton quantum yield of the NPLs. In large NPLs with unity single exciton quantum yield, the corresponding biexciton quantum yield can reach unity. In conclusion, these findings reveal that by careful growth control and core–shell material engineering, NPLs can be of great potential for light amplification and integrated quantum photonic applications.« less

Size-Dependent Biexciton Quantum Yields and Carrier Dynamics of Quasi-Two-Dimensional Core/Shell Nanoplatelets

DOE PAGES

Ma, Xuedan; Diroll, Benjamin T.; Cho, Wooje; ...

2017-08-08

Quasi-two-dimensional nanoplatelets (NPLs) possess fundamentally different excitonic properties from zero-dimensional quantum dots. We study lateral size-dependent photon emission statistics and carrier dynamics of individual NPLs using second-order photon correlation (g( 2)(τ)) spectroscopy and photoluminescence (PL) intensity-dependent lifetime analysis. Room-temperature radiative lifetimes of NPLs can be derived from maximum PL intensity periods in PL time traces. It first decreases with NPL lateral size and then stays constant, deviating from the electric dipole approximation. Analysis of the PL time traces further reveals that the single exciton quantum yield in NPLs decreases with NPL lateral size and increases with protecting shell thickness, indicatingmore » the importance of surface passivation on NPL emission quality. Second-order photon correlation (g( 2)(τ)) studies of single NPLs show that the biexciton quantum yield is strongly dependent on the lateral size and single exciton quantum yield of the NPLs. In large NPLs with unity single exciton quantum yield, the corresponding biexciton quantum yield can reach unity. In conclusion, these findings reveal that by careful growth control and core–shell material engineering, NPLs can be of great potential for light amplification and integrated quantum photonic applications.« less

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

PubMed

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

A Novel Quantum Solution to Privacy-Preserving Nearest Neighbor Query in Location-Based Services

NASA Astrophysics Data System (ADS)

Luo, Zhen-yu; Shi, Run-hua; Xu, Min; Zhang, Shun

2018-04-01

We present a cheating-sensitive quantum protocol for Privacy-Preserving Nearest Neighbor Query based on Oblivious Quantum Key Distribution and Quantum Encryption. Compared with the classical related protocols, our proposed protocol has higher security, because the security of our protocol is based on basic physical principles of quantum mechanics, instead of difficulty assumptions. Especially, our protocol takes single photons as quantum resources and only needs to perform single-photon projective measurement. Therefore, it is feasible to implement this protocol with the present technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Vandersypen, L. M. K.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Long wavelength infrared detector

NASA Technical Reports Server (NTRS)

Vasquez, Richard P. (Inventor)

1993-01-01

Long wavelength infrared detection is achieved by a detector made with layers of quantum well material bounded on each side by barrier material to form paired quantum wells, each quantum well having a single energy level. The width and depth of the paired quantum wells, and the spacing therebetween, are selected to split the single energy level with an upper energy level near the top of the energy wells. The spacing is selected for splitting the single energy level into two energy levels with a difference between levels sufficiently small for detection of infrared radiation of a desired wavelength.

Quantum Logic with Cavity Photons From Single Atoms.

PubMed

Holleczek, Annemarie; Barter, Oliver; Rubenok, Allison; Dilley, Jerome; Nisbet-Jones, Peter B R; Langfahl-Klabes, Gunnar; Marshall, Graham D; Sparrow, Chris; O'Brien, Jeremy L; Poulios, Konstantinos; Kuhn, Axel; Matthews, Jonathan C F

2016-07-08

We demonstrate quantum logic using narrow linewidth photons that are produced with an a priori nonprobabilistic scheme from a single ^{87}Rb atom strongly coupled to a high-finesse cavity. We use a controlled-not gate integrated into a photonic chip to entangle these photons, and we observe nonclassical correlations between photon detection events separated by periods exceeding the travel time across the chip by 3 orders of magnitude. This enables quantum technology that will use the properties of both narrow-band single photon sources and integrated quantum photonics.

Operating single quantum emitters with a compact Stirling cryocooler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlehahn, A.; Krüger, L.; Gschrey, M.

2015-01-15

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, wemore » perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g{sup (2)}(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g{sup (2)}(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.« less

Operating single quantum emitters with a compact Stirling cryocooler.

PubMed

Schlehahn, A; Krüger, L; Gschrey, M; Schulze, J-H; Rodt, S; Strittmatter, A; Heindel, T; Reitzenstein, S

2015-01-01

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g((2))(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g((2))(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

Polymer Waveguides for Quantum Information

DTIC Science & Technology

2005-01-01

a single photon or a very small amount of light plays a critical role in establishing the quantum nature of the process. These materials offer...realizations of Mach-Zehnder interferometers for use in single- photon quantum communication systems. The Scope of the research for this grant: This...to the waveguide we make. We also intend to investigate the transmission of highly attenuated signals mimicking the single photon , which in turn

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

PubMed

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Single Channel Quantum Color Image Encryption Algorithm Based on HSI Model and Quantum Fourier Transform

NASA Astrophysics Data System (ADS)

Gong, Li-Hua; He, Xiang-Tao; Tan, Ru-Chao; Zhou, Zhi-Hong

2018-01-01

In order to obtain high-quality color images, it is important to keep the hue component unchanged while emphasize the intensity or saturation component. As a public color model, Hue-Saturation Intensity (HSI) model is commonly used in image processing. A new single channel quantum color image encryption algorithm based on HSI model and quantum Fourier transform (QFT) is investigated, where the color components of the original color image are converted to HSI and the logistic map is employed to diffuse the relationship of pixels in color components. Subsequently, quantum Fourier transform is exploited to fulfill the encryption. The cipher-text is a combination of a gray image and a phase matrix. Simulations and theoretical analyses demonstrate that the proposed single channel quantum color image encryption scheme based on the HSI model and quantum Fourier transform is secure and effective.

Exchange-biased quantum tunnelling in a supramolecular dimer of single-molecule magnets.

PubMed

Wernsdorfer, Wolfgang; Aliaga-Alcalde, Núria; Hendrickson, David N; Christou, George

2002-03-28

Various present and future specialized applications of magnets require monodisperse, small magnetic particles, and the discovery of molecules that can function as nanoscale magnets was an important development in this regard. These molecules act as single-domain magnetic particles that, below their blocking temperature, exhibit magnetization hysteresis, a classical property of macroscopic magnets. Such 'single-molecule magnets' (SMMs) straddle the interface between classical and quantum mechanical behaviour because they also display quantum tunnelling of magnetization and quantum phase interference. Quantum tunnelling of magnetization can be advantageous for some potential applications of SMMs, for example, in providing the quantum superposition of states required for quantum computing. However, it is a disadvantage in other applications, such as information storage, where it would lead to information loss. Thus it is important to both understand and control the quantum properties of SMMs. Here we report a supramolecular SMM dimer in which antiferromagnetic coupling between the two components results in quantum behaviour different from that of the individual SMMs. Our experimental observations and theoretical analysis suggest a means of tuning the quantum tunnelling of magnetization in SMMs. This system may also prove useful for studying quantum tunnelling of relevance to mesoscopic antiferromagnets.

Implementing universal nonadiabatic holonomic quantum gates with transmons

NASA Astrophysics Data System (ADS)

Hong, Zhuo-Ping; Liu, Bao-Jie; Cai, Jia-Qi; Zhang, Xin-Ding; Hu, Yong; Wang, Z. D.; Xue, Zheng-Yuan

2018-02-01

Geometric phases are well known to be noise resilient in quantum evolutions and operations. Holonomic quantum gates provide us with a robust way towards universal quantum computation, as these quantum gates are actually induced by non-Abelian geometric phases. Here we propose and elaborate how to efficiently implement universal nonadiabatic holonomic quantum gates on simpler superconducting circuits, with a single transmon serving as a qubit. In our proposal, an arbitrary single-qubit holonomic gate can be realized in a single-loop scenario by varying the amplitudes and phase difference of two microwave fields resonantly coupled to a transmon, while nontrivial two-qubit holonomic gates may be generated with a transmission-line resonator being simultaneously coupled to the two target transmons in an effective resonant way. Moreover, our scenario may readily be scaled up to a two-dimensional lattice configuration, which is able to support large scalable quantum computation, paving the way for practically implementing universal nonadiabatic holonomic quantum computation with superconducting circuits.

Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry.

PubMed

Müller, M; Vural, H; Schneider, C; Rastelli, A; Schmidt, O G; Höfling, S; Michler, P

2017-06-23

Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits

NASA Astrophysics Data System (ADS)

Yu, Leo; Natarajan, Chandra M.; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S.; Tanner, Michael G.; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H.; Fejer, Martin M.; Yamamoto, Yoshihisa

2015-11-01

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances.

Heralded entangling quantum gate via cavity-assisted photon scattering

NASA Astrophysics Data System (ADS)

Borges, Halyne S.; Rossatto, Daniel Z.; Luiz, Fabrício S.; Villas-Boas, Celso J.

2018-01-01

We theoretically investigate the generation of heralded entanglement between two identical atoms via cavity-assisted photon scattering in two different configurations, namely, either both atoms confined in the same cavity or trapped into locally separated ones. Our protocols are given by a very simple and elegant single-step process, the key mechanism of which is a controlled-phase-flip gate implemented by impinging a single photon on single-sided cavities. In particular, when the atoms are localized in remote cavities, we introduce a single-step parallel quantum circuit instead of the serial process extensively adopted in the literature. We also show that such parallel circuit can be straightforwardly applied to entangle two macroscopic clouds of atoms. Both protocols proposed here predict a high entanglement degree with a success probability close to unity for state-of-the-art parameters. Among other applications, our proposal and its extension to multiple atom-cavity systems step toward a suitable route for quantum networking, in particular for quantum state transfer, quantum teleportation, and nonlocal quantum memory.

Electrically driven quantum light emission in electromechanically tuneable photonic crystal cavities

NASA Astrophysics Data System (ADS)

Petruzzella, M.; Pagliano, F. M.; Zobenica, Ž.; Birindelli, S.; Cotrufo, M.; van Otten, F. W. M.; van der Heijden, R. W.; Fiore, A.

2017-12-01

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits.

PubMed

Yu, Leo; Natarajan, Chandra M; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S; Tanner, Michael G; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H; Fejer, Martin M; Yamamoto, Yoshihisa

2015-11-24

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances.

Strong Light-Matter Interactions in Single Open Plasmonic Nanocavities at the Quantum Optics Limit.

PubMed

Liu, Renming; Zhou, Zhang-Kai; Yu, Yi-Cong; Zhang, Tengwei; Wang, Hao; Liu, Guanghui; Wei, Yuming; Chen, Huanjun; Wang, Xue-Hua

2017-06-09

Reaching the quantum optics limit of strong light-matter interactions between a single exciton and a plasmon mode is highly desirable, because it opens up possibilities to explore room-temperature quantum devices operating at the single-photon level. However, two challenges severely hinder the realization of this limit: the integration of single-exciton emitters with plasmonic nanostructures and making the coupling strength at the single-exciton level overcome the large damping of the plasmon mode. Here, we demonstrate that these two hindrances can be overcome by attaching individual J aggregates to single cuboid Au@Ag nanorods. In such hybrid nanosystems, both the ultrasmall mode volume of ∼71  nm^{3} and the ultrashort interaction distance of less than 0.9 nm make the coupling coefficient between a single J-aggregate exciton and the cuboid nanorod as high as ∼41.6  meV, enabling strong light-matter interactions to be achieved at the quantum optics limit in single open plasmonic nanocavities.

Multi-party Semi-quantum Key Agreement with Delegating Quantum Computation

NASA Astrophysics Data System (ADS)

Liu, Wen-Jie; Chen, Zhen-Yu; Ji, Sai; Wang, Hai-Bin; Zhang, Jun

2017-10-01

A multi-party semi-quantum key agreement (SQKA) protocol based on delegating quantum computation (DQC) model is proposed by taking Bell states as quantum resources. In the proposed protocol, the participants only need the ability of accessing quantum channel and preparing single photons {|0〉, |1〉, |+〉, |-〉}, while the complicated quantum operations, such as the unitary operations and Bell measurement, will be delegated to the remote quantum center. Compared with previous quantum key agreement protocols, this client-server model is more feasible in the early days of the emergence of quantum computers. In order to prevent the attacks from outside eavesdroppers, inner participants and quantum center, two single photon sequences are randomly inserted into Bell states: the first sequence is used to perform the quantum channel detection, while the second is applied to disorder the positions of message qubits, which guarantees the security of the protocol.

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

PubMed Central

Birowosuto, Muhammad Danang; Sumikura, Hisashi; Matsuo, Shinji; Taniyama, Hideaki; van Veldhoven, Peter J.; Nötzel, Richard; Notomi, Masaya

2012-01-01

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres. PMID:22432053

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling.

PubMed

Birowosuto, Muhammad Danang; Sumikura, Hisashi; Matsuo, Shinji; Taniyama, Hideaki; van Veldhoven, Peter J; Nötzel, Richard; Notomi, Masaya

2012-01-01

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.

Three-party Quantum Secure Direct Communication with Single Photons in both Polarization and Spatial-mode Degrees of Freedom

NASA Astrophysics Data System (ADS)

Wang, LiLi; Ma, WenPing; Wang, MeiLing; Shen, DongSu

2016-05-01

We present an efficient three-party quantum secure direct communication (QSDC) protocol with single photos in both polarization and spatial-mode degrees of freedom. The three legal parties' messages can be encoded on the polarization and the spatial-mode states of single photons independently with desired unitary operations. A party can obtain the other two parties' messages simultaneously through a quantum channel. Because no extra public information is transmitted in the classical channels, the drawback of information leakage or classical correlation does not exist in the proposed scheme. Moreover, the comprehensive security analysis shows that the presented QSDC network protocol can defend the outsider eavesdropper's several sorts of attacks. Compared with the single photons with only one degree of freedom, our protocol based on the single photons in two degrees of freedom has higher capacity. Since the preparation and the measurement of single photon quantum states in both the polarization and the spatial-mode degrees of freedom are available with current quantum techniques, the proposed protocol is practical.

Experimental verification of multidimensional quantum steering

NASA Astrophysics Data System (ADS)

Li, Che-Ming; Lo, Hsin-Pin; Chen, Liang-Yu; Yabushita, Atsushi

2018-03-01

Quantum steering enables one party to communicate with another remote party even if the sender is untrusted. Such characteristics of quantum systems not only provide direct applications to quantum information science, but are also conceptually important for distinguishing between quantum and classical resources. While concrete illustrations of steering have been shown in several experiments, quantum steering has not been certified for higher dimensional systems. Here, we introduce a simple method to experimentally certify two different kinds of quantum steering: Einstein-Podolsky-Rosen (EPR) steering and single-system (SS) steering (i.e., temporal steering), for dimensionality (d) up to d = 16. The former reveals the steerability among bipartite systems, whereas the latter manifests itself in single quantum objects. We use multidimensional steering witnesses to verify EPR steering of polarization-entangled pairs and SS steering of single photons. The ratios between the measured witnesses and the maximum values achieved by classical mimicries are observed to increase with d for both EPR and SS steering. The designed scenario offers a new method to study further the genuine multipartite steering of large dimensionality and potential uses in quantum information processing.

Electrical control of single hole spins in nanowire quantum dots.

PubMed

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

PubMed

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-10-15

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

Optically programmable electron spin memory using semiconductor quantum dots.

PubMed

Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

2004-11-04

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

PubMed Central

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

Experimental Realization of Efficient, Room Temperature Single-Photon Sources with Definite Circular and Linear Polarizations

NASA Astrophysics Data System (ADS)

Boutsidis, Christos

In this thesis I present experimental demonstrations of room-temperature, single-photon sources with definite linear and circular polarizations. Definite photon polarization increases the efficiency of quantum communication systems. In contrast with cryogenic-temperature single-photon sources based on epitaxial quantum dots requiring expensive MBE and nanofabrication, my method utilizes a mature liquid crystal technology, which I made consistent with single-emitter fluorescence microscopy. The structures I have prepared are planar-aligned cholesteric liquid crystals forming 1-D photonic bandgaps for circularly-polarized light, which were used to achieve definite circularly-polarized fluorescence of single emitters doped in this environment. I also used planar-aligned nematic liquid crystals to align single molecules with linear dipole moments and achieved definite linearly-polarized fluorescence. I used single nanocrystal quantum dots, single nanodiamond color-centers, rare-earth-doped nanocrystals, and single terrylene and DiIC18(3) dye molecules as emitters. For nanocrystal quantum dots I observed circular polarization dissymmetry factors as large as ge = --1.6. In addition, I observed circularly-polarized resonances in the fluorescence of emitters within a cholesteric microcavity, with cavity quality factors of up to Q ˜ 250. I also showed that the fluorescence of DiIC18(3) dye molecules in planar-aligned nematic cells exhibits definite linear polarization, with a degree of polarization of rho = --0.58 +/- 0.03. Distributed Bragg reflectors form another type of microcavity that can be used to realize a single-photon source. I characterized the fluorescence from nanocrystal quantum dots doped in the defect layers of such microcavites, both organic and inorganic. Finally, to demonstrate the single-photon properties of single-emitter-doped cholesteric and nematic liquid crystal structures and distributed Bragg reflector microcavities, I present observations of photon antibunching from emitters doped in each of these structures. These experimental observations include photon antibunching from: nanocrystal quantum dots and nanodiamond color-centers doped in a cholesteric microcavity; terrylene and DiIC 18(3) dye molecules doped in nematic structures, and nanocrystal quantum dots doped in the distributed Bragg reflector microcavity. A value of the zero-time second-order coherence as low as g(2)(0) = 0.001 +/- 0.03 was measured. These results represent an important step forward in the realization of room temperature single-photon sources with definite polarization for secure quantum communication.

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

PubMed

Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

2018-05-09

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

On-demand semiconductor single-photon source with near-unity indistinguishability.

PubMed

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Observation of quantum entanglement between a photon and a single electron spin confined to an InAs quantum dot

NASA Astrophysics Data System (ADS)

Schaibley, John; Burgers, Alex; McCracken, Greg; Duan, Luming; Berman, Paul; Steel, Duncan; Bracker, Allan; Gammon, Daniel; Sham, Lu

2013-03-01

A single electron spin confined to a single InAs quantum dot (QD) can serve as a qubit for quantum information processing. By utilizing the QD's optically excited trion states in the presence of an externally applied magnetic field, the QD spin can be rapidly initialized, manipulated and read out. A key resource for quantum information is the ability to entangle distinct QD spins. One approach relies on intermediate spin-photon entanglement to mediate the entanglement between distant QD spin qubits. We report a demonstration of quantum entanglement between a photon's polarization state and the spin state of a single electron confined to a single QD. Here, the photon is spontaneously emitted from one of the QD's trion states. The emitted photon's polarization along the detection axis is entangled with the resulting spin state of the QD. By performing projective measurements on the photon's polarization state and correlating these measurements with the state of the QD spin in two different bases, we obtain a lower bound on the entanglement fidelity of 0.59 (after background correction). The fidelity bound is limited almost entirely by the timing resolution of our single photon detector. The spin-photon entanglement generation rate is 3 ×103 s-1. Supported by: NSF, MURI, AFOSR, DARPA, ARO.

Single photon at a configurable quantum-memory-based beam splitter

NASA Astrophysics Data System (ADS)

Guo, Xianxin; Mei, Yefeng; Du, Shengwang

2018-06-01

We report the demonstration of a configurable coherent quantum-memory-based beam splitter (BS) for a single-photon wave packet making use of laser-cooled 85Rb atoms and electromagnetically induced transparency. The single-photon wave packet is converted (stored) into a collective atomic spin state and later retrieved (split) into two nearly opposing directions. The storage time, beam-splitting ratio, and relative phase are configurable and can be dynamically controlled. We experimentally confirm that such a BS preserves the quantum particle nature of the single photon and the coherence between the two split wave packets of the single photon.

Semi-quantum Dialogue Based on Single Photons

NASA Astrophysics Data System (ADS)

Ye, Tian-Yu; Ye, Chong-Qiang

2018-02-01

In this paper, we propose two semi-quantum dialogue (SQD) protocols by using single photons as the quantum carriers, where one requires the classical party to possess the measurement capability and the other does not have this requirement. The security toward active attacks from an outside Eve in the first SQD protocol is guaranteed by the complete robustness of present semi-quantum key distribution (SQKD) protocols, the classical one-time pad encryption, the classical party's randomization operation and the decoy photon technology. The information leakage problem of the first SQD protocol is overcome by the classical party' classical basis measurements on the single photons carrying messages which makes him share their initial states with the quantum party. The security toward active attacks from Eve in the second SQD protocol is guaranteed by the classical party's randomization operation, the complete robustness of present SQKD protocol and the classical one-time pad encryption. The information leakage problem of the second SQD protocol is overcome by the quantum party' classical basis measurements on each two adjacent single photons carrying messages which makes her share their initial states with the classical party. Compared with the traditional information leakage resistant QD protocols, the advantage of the proposed SQD protocols lies in that they only require one party to have quantum capabilities. Compared with the existing SQD protocol, the advantage of the proposed SQD protocols lies in that they only employ single photons rather than two-photon entangled states as the quantum carriers. The proposed SQD protocols can be implemented with present quantum technologies.

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Berger, Christoph; Veit, Peter

2015-06-22

Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function atmore » zero time delay.« less

Plasmon-Assisted Selective and Super-Resolving Excitation of Individual Quantum Emitters on a Metal Nanowire.

PubMed

Li, Qiang; Pan, Deng; Wei, Hong; Xu, Hongxing

2018-03-14

Hybrid systems composed of multiple quantum emitters coupled with plasmonic waveguides are promising building blocks for future integrated quantum nanophotonic circuits. The techniques that can super-resolve and selectively excite contiguous quantum emitters in a diffraction-limited area are of great importance for studying the plasmon-mediated interaction between quantum emitters and manipulating the single plasmon generation and propagation in plasmonic circuits. Here we show that multiple quantum dots coupled with a silver nanowire can be controllably excited by tuning the interference field of surface plasmons on the nanowire. Because of the period of the interference pattern is much smaller than the diffraction limit, we demonstrate the selective excitation of two quantum dots separated by a distance as short as 100 nm. We also numerically demonstrate a new kind of super-resolution imaging method that combines the tunable surface plasmon interference pattern on the NW with the structured illumination microscopy technique. Our work provides a novel high-resolution optical excitation and imaging method for the coupled systems of multiple quantum emitters and plasmonic waveguides, which adds a new tool for studying and manipulating single quantum emitters and single plasmons for quantum plasmonic circuitry applications.

The application of microwave photonic detection in quantum communication

NASA Astrophysics Data System (ADS)

Diao, Wenting; Zhuang, Yongyong; Song, Xuerui; Wang, Liujun; Duan, Chongdi

2018-03-01

Quantum communication has attracted much attention in recent years, provides an ultimate level of security, and uniquely it is one of the most likely practical quantum technologies at present. In order to realize global coverage of quantum communication networks, not only need the help of satellite to realize wide area quantum communication, need implementation of optical fiber system to realize city to city quantum communication, but also, it is necessary to implement end-to-end quantum communications intercity and wireless quantum communications that can be received by handheld devices. Because of the limitation of application of light in buildings, it needs quantum communication with microwave band to achieve quantum reception of wireless handheld devices. The single microwave photon energy is very low, it is difficult to directly detect, which become a difficulty in microwave quantum detection. This paper summarizes the mode of single microwave photon detection methods and the possibility of application in microwave quantum communication, and promotes the development of quantum communication in microwave band and quantum radar.

Measurement-only verifiable blind quantum computing with quantum input verification

NASA Astrophysics Data System (ADS)

Morimae, Tomoyuki

2016-10-01

Verifiable blind quantum computing is a secure delegated quantum computing where a client with a limited quantum technology delegates her quantum computing to a server who has a universal quantum computer. The client's privacy is protected (blindness), and the correctness of the computation is verifiable by the client despite her limited quantum technology (verifiability). There are mainly two types of protocols for verifiable blind quantum computing: the protocol where the client has only to generate single-qubit states and the protocol where the client needs only the ability of single-qubit measurements. The latter is called the measurement-only verifiable blind quantum computing. If the input of the client's quantum computing is a quantum state, whose classical efficient description is not known to the client, there was no way for the measurement-only client to verify the correctness of the input. Here we introduce a protocol of measurement-only verifiable blind quantum computing where the correctness of the quantum input is also verifiable.

Mid-infrared coincidence measurements on twin photons at room temperature

PubMed Central

Mancinelli, M.; Trenti, A.; Piccione, S.; Fontana, G.; Dam, J. S.; Tidemand-Lichtenberg, P.; Pedersen, C.; Pavesi, L.

2017-01-01

Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons. In the visible and near infrared wavelength ranges suitable single-photon detectors do exist. However, low detector quantum efficiency or excessive noise has hampered their mid-infrared (MIR) counterpart. Fast and highly efficient single-photon detectors are thus highly sought after for MIR applications. Here we pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 μm. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules. The up-converted pairs are then detected with low-noise silicon avalanche photodiodes without the need for cryogenic cooling. PMID:28504244

Self-Assembled Nanocrystals of Polycyclic Aromatic Hydrocarbons Show Photostable Single-Photon Emission.

PubMed

Pazzagli, Sofia; Lombardi, Pietro; Martella, Daniele; Colautti, Maja; Tiribilli, Bruno; Cataliotti, Francesco Saverio; Toninelli, Costanza

2018-05-22

Quantum technologies could largely benefit from the control of quantum emitters in sub-micrometric size crystals. These are naturally prone to integration in hybrid devices, including heterostructures and complex photonic devices. Currently available quantum emitters in nanocrystals suffer from spectral instability, preventing their use as single-photon sources for most quantum optics operations. In this work we report on the performances of single-photon emission from organic nanocrystals (average size of hundreds of nm), made of anthracene (Ac) and doped with dibenzoterrylene (DBT) molecules. The source has hours-long photostability with respect to frequency and intensity, both at room and at cryogenic temperature. When cooled to 3 K, the 00-zero phonon line shows linewidth values (50 MHz) close to the lifetime limit. Such optical properties in a nanocrystalline environment recommend the proposed organic nanocrystals as single-photon sources for integrated photonic quantum technologies.

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

NASA Astrophysics Data System (ADS)

Haffouz, Sofiane; Zeuner, Katharina D.; Dalacu, Dan; Poole, Philip J.; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D.; Zwiller, Valery; Williams, Robin L.

2018-05-01

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

PubMed

Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

2013-10-09

In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

Experimental two-dimensional quantum walk on a photonic chip

PubMed Central

Lin, Xiao-Feng; Feng, Zhen; Chen, Jing-Yuan; Gao, Jun; Sun, Ke; Wang, Chao-Yue; Lai, Peng-Cheng; Xu, Xiao-Yun; Wang, Yao; Qiao, Lu-Feng; Yang, Ai-Lin

2018-01-01

Quantum walks, in virtue of the coherent superposition and quantum interference, have exponential superiority over their classical counterpart in applications of quantum searching and quantum simulation. The quantum-enhanced power is highly related to the state space of quantum walks, which can be expanded by enlarging the photon number and/or the dimensions of the evolution network, but the former is considerably challenging due to probabilistic generation of single photons and multiplicative loss. We demonstrate a two-dimensional continuous-time quantum walk by using the external geometry of photonic waveguide arrays, rather than the inner degree of freedoms of photons. Using femtosecond laser direct writing, we construct a large-scale three-dimensional structure that forms a two-dimensional lattice with up to 49 × 49 nodes on a photonic chip. We demonstrate spatial two-dimensional quantum walks using heralded single photons and single photon–level imaging. We analyze the quantum transport properties via observing the ballistic evolution pattern and the variance profile, which agree well with simulation results. We further reveal the transient nature that is the unique feature for quantum walks of beyond one dimension. An architecture that allows a quantum walk to freely evolve in all directions and at a large scale, combining with defect and disorder control, may bring up powerful and versatile quantum walk machines for classically intractable problems. PMID:29756040

Experimental two-dimensional quantum walk on a photonic chip.

PubMed

Tang, Hao; Lin, Xiao-Feng; Feng, Zhen; Chen, Jing-Yuan; Gao, Jun; Sun, Ke; Wang, Chao-Yue; Lai, Peng-Cheng; Xu, Xiao-Yun; Wang, Yao; Qiao, Lu-Feng; Yang, Ai-Lin; Jin, Xian-Min

2018-05-01

Quantum walks, in virtue of the coherent superposition and quantum interference, have exponential superiority over their classical counterpart in applications of quantum searching and quantum simulation. The quantum-enhanced power is highly related to the state space of quantum walks, which can be expanded by enlarging the photon number and/or the dimensions of the evolution network, but the former is considerably challenging due to probabilistic generation of single photons and multiplicative loss. We demonstrate a two-dimensional continuous-time quantum walk by using the external geometry of photonic waveguide arrays, rather than the inner degree of freedoms of photons. Using femtosecond laser direct writing, we construct a large-scale three-dimensional structure that forms a two-dimensional lattice with up to 49 × 49 nodes on a photonic chip. We demonstrate spatial two-dimensional quantum walks using heralded single photons and single photon-level imaging. We analyze the quantum transport properties via observing the ballistic evolution pattern and the variance profile, which agree well with simulation results. We further reveal the transient nature that is the unique feature for quantum walks of beyond one dimension. An architecture that allows a quantum walk to freely evolve in all directions and at a large scale, combining with defect and disorder control, may bring up powerful and versatile quantum walk machines for classically intractable problems.

Quantum entanglement between an optical photon and a solid-state spin qubit.

PubMed

Togan, E; Chu, Y; Trifonov, A S; Jiang, L; Maze, J; Childress, L; Dutt, M V G; Sørensen, A S; Hemmer, P R; Zibrov, A S; Lukin, M D

2010-08-05

Quantum entanglement is among the most fascinating aspects of quantum theory. Entangled optical photons are now widely used for fundamental tests of quantum mechanics and applications such as quantum cryptography. Several recent experiments demonstrated entanglement of optical photons with trapped ions, atoms and atomic ensembles, which are then used to connect remote long-term memory nodes in distributed quantum networks. Here we realize quantum entanglement between the polarization of a single optical photon and a solid-state qubit associated with the single electronic spin of a nitrogen vacancy centre in diamond. Our experimental entanglement verification uses the quantum eraser technique, and demonstrates that a high degree of control over interactions between a solid-state qubit and the quantum light field can be achieved. The reported entanglement source can be used in studies of fundamental quantum phenomena and provides a key building block for the solid-state realization of quantum optical networks.

Quantum Otto engine using a single ion and a single thermal bath

NASA Astrophysics Data System (ADS)

Biswas, Asoka; Chand, Suman

2016-05-01

Quantum heat engines employ a quantum system as the working fluid, that gives rise to large work efficiency, beyond the limit for classical heat engines. Existing proposals for implementing quantum heat engines require that the system interacts with the hot bath and the cold bath (both modelled as a classical system) in an alternative fashion and therefore assumes ability to switch off the interaction with the bath during a certain stage of the heat-cycle. However, it is not possible to decouple a quantum system from its always-on interaction with the bath without use of complex pulse sequences. It is also hard to identify two different baths at two different temperatures in quantum domain, that sequentially interact with the system. Here, we show how to implement a quantum Otto engine without requiring to decouple the bath in a sequential manner. This is done by considering a single thermal bath, coupled to a single trapped ion. The electronic degree of freedom of the ion is chosen as a two-level working fluid while the vibrational degree of freedom plays the role of the cold bath. Measuring the electronic state mimics the release of heat into the cold bath. Thus, our model is fully quantum and exhibits very large work efficiency, asymptotically close to unity.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

PubMed

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

NASA Astrophysics Data System (ADS)

Dixit, V. K.; Porwal, S.; Singh, S. D.; Sharma, T. K.; Ghosh, Sandip; Oak, S. M.

2014-02-01

Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states.

Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

NASA Astrophysics Data System (ADS)

Mounir, Christian; Schimpke, Tilman; Rossbach, Georg; Avramescu, Adrian; Strassburg, Martin; Schwarz, Ulrich T.

2017-01-01

We investigate the optical emission properties of the active InGaN shell of high aspect-ratio InGaN/GaN core-shell microrods (μRods) by confocal quasi-resonant polarization-resolved and excitation density dependent micro-photoluminescence (μPL). The active shell, multiple thin InGaN/GaN quantum wells (MQWs), was deposited on GaN μRods selectively grown by metal organic vapor phase epitaxy on patterned SiO2/n-GaN/sapphire template. High spatial resolution mappings reveal a very homogeneous emission intensity along the whole μRods including the tip despite a red-shift of 30 nm from the base to the tip along the 8.6 μm-long m-plane sidewalls. Looking at the Fabry-Perot interference fringes superimposed on the μPL spectra, we get structural information on the μRods. A high degree of linear polarization (DLP) of 0.6-0.66 is measured on the lower half of the m-plane side facets with a slight decrease toward the tip. We observe the typical drop of the DLP with an excitation density caused by degenerate filling of valence bands (Fermi regime). Local internal quantum efficiencies (IQEs) of 55 ±11 % up to 73 ±7 % are estimated on the m-plane facet from measurements at low temperature. Finally, simultaneously fitting the DLP and IQE as a function of the excitation density, we determine the carrier density inside the active region and the recombination rate coefficients of the m-plane MQWs. We show that phase-space filling and the background carrier density have to be included in the recombination rate model.

Generation of Antibunched Light by Excited Molecules in a Microcavity Trap

NASA Technical Reports Server (NTRS)

DeMartini, F.; DiGiuseppe, G.; Marrocco, M.

1996-01-01

The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.

Optical-nanofiber-based interface for single molecules

NASA Astrophysics Data System (ADS)

Skoff, Sarah M.; Papencordt, David; Schauffert, Hardy; Bayer, Bernhard C.; Rauschenbeutel, Arno

2018-04-01

Optical interfaces for quantum emitters are a prerequisite for implementing quantum networks. Here, we couple single molecules to the guided modes of an optical nanofiber. The molecules are embedded within a crystal that provides photostability and, due to the inhomogeneous broadening, a means to spectrally address single molecules. Single molecules are excited and detected solely via the nanofiber interface without the requirement of additional optical access. In this way, we realize a fully fiber-integrated system that is scalable and may become a versatile constituent for quantum hybrid systems.

Optical levitation of a microdroplet containing a single quantum dot.

PubMed

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2015-03-15

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This Letter presents the realization of an optically levitated solid-state quantum emitter.

Sensitivity enhancements in MQ-MAS NMR of spin-5/2 nuclei using modulated rf mixing pulses

NASA Astrophysics Data System (ADS)

Vosegaard, Thomas; Massiot, Dominique; Grandinetti, Philip J.

2000-08-01

An X- overlineX pulse train with stepped modulation frequency was employed to enhance the multiple-quantum to single-quantum coherence transfer in the mixing period of the multiple-quantum magic-angle spinning (MQ-MAS) experiment for spin I=5/2 nuclei. Two MQ-MAS pulse sequences employing this mixing scheme for the triple-to-single and quintuple-to-single quantum coherence transfers have been designed and their performance is demonstrated for 27Al on samples of NaSi 3AlO 8 and 9Al 2O 3·2B 2O 3 . Compared to the standard single-pulse mixing sequences, the sensitivity is approximately doubled in the present experiments.

Direct Observation of Two-Step Photon Absorption in an InAs/GaAs Single Quantum Dot for the Operation of Intermediate-Band Solar Cells.

PubMed

Nozawa, Tomohiro; Takagi, Hiroyuki; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2015-07-08

We present the first direct observation of two-step photon absorption in an InAs/GaAs single quantum dot (QD) using photocurrent spectroscopy with two lasers. The sharp peaks of the photocurrent are shifted due to the quantum confined Stark effect, indicating that the photocurrent from a single QD is obtained. In addition, the intensity of the peaks depends on the power of the secondary laser. These results reveal the direct demonstration of the two-step photon absorption in a single QD. This is an essential result for both the fundamental operation and the realization of ultrahigh solar-electricity energy conversion in quantum dot intermediate-band solar cells.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Measuring complete quantum states with a single observable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng Xinhua; Suter, Dieter; Du Jiangfeng

2007-10-15

Experimental determination of an unknown quantum state usually requires several incompatible measurements. However, it is also possible to determine the full quantum state from a single, repeated measurement. For this purpose, the quantum system whose state is to be determined is first coupled to a second quantum system (the 'assistant') in such a way that part of the information in the quantum state is transferred to the assistant. The actual measurement is then performed on the enlarged system including the original system and the assistant. We discuss in detail the requirements of this procedure and experimentally implement it on amore » simple quantum system consisting of nuclear spins.« less

A reconfigurable gate architecture for Si/SiGe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zajac, D. M.; Hazard, T. M.; Mi, X.

2015-06-01

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

Conduction Band-Edge Non-Parabolicity Effects on Impurity States in (In,Ga)N/GaN Cylindrical QWWs

NASA Astrophysics Data System (ADS)

Haddou El, Ghazi; Anouar, Jorio

2014-02-01

In this paper, the conduction band-edge non-parabolicity (NP) and the circular cross-section radius effects on hydrogenic shallow-donor impurity ground-state binding energy in zinc-blende (ZB) InGaN/GaN cylindrical QWWs are reported. The finite potential barrier between (In,Ga)N well and GaN environment is considered. Two models of the conduction band-edge non-parabolicity are taking into account. The variational approach is used within the framework of single band effective-mass approximation with one-parametric 1S-hydrogenic trial wave-function. It is found that NP effect is more pronounced in the wire of radius equal to effective Bohr radius than in large and narrow wires. Moreover, the binding energy peak shifts to narrow wire under NP effect. A good agreement is shown compared to the findings results.

Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl; Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw; Sakowski, K.

2016-07-07

Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain wasmore » below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton peak from the bulk GaN (DX GaN) and the two peaks (A and B) from InGaN layers. No emission from quaternary AlInGaN layers was observed. An accumulation of electrons on the EBL interface in high-In sample and formation of 2D electron gas (2DEG) was detected. The dynamics of 2DEG was studied by time resolved luminescence revealing strong dependence of emission energy on the 2DEG concentration. Theoretical calculations as well as power-dependence and temperature-dependence analysis showed the importance of electric field inside the structure. At the interface, the field was screened by carriers and could be changed by illumination. From these measurements, the dynamics of electric field was described as the discharge of carriers accumulated on the EBL.« less

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

PubMed Central

Schuck, C.; Guo, X.; Fan, L.; Ma, X.; Poot, M.; Tang, H. X.

2016-01-01

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips. PMID:26792424

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

PubMed

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

NASA Astrophysics Data System (ADS)

Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

2017-09-01

Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

Classical and quantum optical correlation effects between single quantum dots: The role of the hopping photon

NASA Astrophysics Data System (ADS)

Hughes, S.; Gotoh, H.; Kamada, H.

2006-09-01

We present a theoretical study of photon-coupled single quantum dots in a semiconductor. A series of optical effects are demonstrated, including a subradiant dark resonance, superradiance, reversible spontaneous emission decay, and pronounced exciton entanglement. Both classical and quantum optical approaches are presented using a self-consistent formalism that treats real and virtual photon exchange on an equal footing and can account for different quantum dot properties, surface effects, and retardation in the dipole-dipole coupling, all of which are shown to play a non-negligible role.

Mode locking of electron spin coherences in singly charged quantum dots.

PubMed

Greilich, A; Yakovlev, D R; Shabaev, A; Efros, Al L; Yugova, I A; Oulton, R; Stavarache, V; Reuter, D; Wieck, A; Bayer, M

2006-07-21

The fast dephasing of electron spins in an ensemble of quantum dots is detrimental for applications in quantum information processing. We show here that dephasing can be overcome by using a periodic train of light pulses to synchronize the phases of the precessing spins, and we demonstrate this effect in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. This mode locking leads to constructive interference of contributions to Faraday rotation and presents potential applications based on robust quantum coherence within an ensemble of dots.

Quantum Metaphotonics

DTIC Science & Technology

2016-03-24

for and success in achieving single quantum dot vacuum Rabi splitting in 2004 (quantum strong coupling, currently 1,354 citations) [6, 7] was...Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity.” Nature 432, 200-203 (2004...7. G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors.” Nature Physics 2, 81 (2006). 8. G

An economic and feasible Quantum Sealed-bid Auction protocol

NASA Astrophysics Data System (ADS)

Zhang, Rui; Shi, Run-hua; Qin, Jia-qi; Peng, Zhen-wan

2018-02-01

We present an economic and feasible Quantum Sealed-bid Auction protocol using quantum secure direct communication based on single photons in both the polarization and the spatial-mode degrees of freedom, where each single photon can carry two bits of classical information. Compared with previous protocols, our protocol has higher efficiency. In addition, we propose a secure post-confirmation mechanism without quantum entanglement to guarantee the security and the fairness of the auction.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

The Heteronuclear Single-Quantum Correlation (HSQC) Experiment: Vectors versus Product Operators

ERIC Educational Resources Information Center

de la Vega-Herna´ndez, Karen; Antuch, Manuel

2015-01-01

A vectorial representation of the full sequence of events occurring during the 2D-NMR heteronuclear single-quantum correlation (HSQC) experiment is presented. The proposed vectorial representation conveys an understanding of the magnetization evolution during the HSQC pulse sequence for those who have little or no quantum mechanical background.…

Quantum phase transitions in spin-1 X X Z chains with rhombic single-ion anisotropy

NASA Astrophysics Data System (ADS)

Ren, Jie; Wang, Yimin; You, Wen-Long

2018-04-01

We explore numerically the inverse participation ratios in the ground state of one-dimensional spin-1 X X Z chains with the rhombic single-ion anisotropy. By employing the techniques of density-matrix renormalization group, effects of the rhombic single-ion anisotropy on various information theoretical measures are investigated, such as the fidelity susceptibility, the quantum coherence, and the entanglement entropy. Their relations with the quantum phase transitions are also analyzed. The phase transitions from the Y -Néel phase to the large-Ex or the Haldane phase can be well characterized by the fidelity susceptibility. The second-order derivative of the ground-state energy indicates all the transitions are of second order. We also find that the quantum coherence, the entanglement entropy, the Schmidt gap, and the inverse participation ratios can be used to detect the critical points of quantum phase transitions. Results drawn from these quantum information observables agree well with each other. Finally we provide a ground-state phase diagram as functions of the exchange anisotropy Δ and the rhombic single-ion anisotropy E .

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits

PubMed Central

Yu, Leo; Natarajan, Chandra M.; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S.; Tanner, Michael G.; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H.; Fejer, Martin M.; Yamamoto, Yoshihisa

2015-01-01

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances. PMID:26597223

Linear Optical Quantum Metrology with Single Photons: Exploiting Spontaneously Generated Entanglement to Beat the Shot-Noise Limit

NASA Astrophysics Data System (ADS)

Motes, Keith R.; Olson, Jonathan P.; Rabeaux, Evan J.; Dowling, Jonathan P.; Olson, S. Jay; Rohde, Peter P.

2015-05-01

Quantum number-path entanglement is a resource for supersensitive quantum metrology and in particular provides for sub-shot-noise or even Heisenberg-limited sensitivity. However, such number-path entanglement has been thought to be resource intensive to create in the first place—typically requiring either very strong nonlinearities, or nondeterministic preparation schemes with feedforward, which are difficult to implement. Very recently, arising from the study of quantum random walks with multiphoton walkers, as well as the study of the computational complexity of passive linear optical interferometers fed with single-photon inputs, it has been shown that such passive linear optical devices generate a superexponentially large amount of number-path entanglement. A logical question to ask is whether this entanglement may be exploited for quantum metrology. We answer that question here in the affirmative by showing that a simple, passive, linear-optical interferometer—fed with only uncorrelated, single-photon inputs, coupled with simple, single-mode, disjoint photodetection—is capable of significantly beating the shot-noise limit. Our result implies a pathway forward to practical quantum metrology with readily available technology.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

NASA Astrophysics Data System (ADS)

Kuhlmann, Andreas V.; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.; Warburton, Richard J.

2013-07-01

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 107 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Linear optical quantum metrology with single photons: exploiting spontaneously generated entanglement to beat the shot-noise limit.

PubMed

Motes, Keith R; Olson, Jonathan P; Rabeaux, Evan J; Dowling, Jonathan P; Olson, S Jay; Rohde, Peter P

2015-05-01

Quantum number-path entanglement is a resource for supersensitive quantum metrology and in particular provides for sub-shot-noise or even Heisenberg-limited sensitivity. However, such number-path entanglement has been thought to be resource intensive to create in the first place--typically requiring either very strong nonlinearities, or nondeterministic preparation schemes with feedforward, which are difficult to implement. Very recently, arising from the study of quantum random walks with multiphoton walkers, as well as the study of the computational complexity of passive linear optical interferometers fed with single-photon inputs, it has been shown that such passive linear optical devices generate a superexponentially large amount of number-path entanglement. A logical question to ask is whether this entanglement may be exploited for quantum metrology. We answer that question here in the affirmative by showing that a simple, passive, linear-optical interferometer--fed with only uncorrelated, single-photon inputs, coupled with simple, single-mode, disjoint photodetection--is capable of significantly beating the shot-noise limit. Our result implies a pathway forward to practical quantum metrology with readily available technology.

Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

NASA Astrophysics Data System (ADS)

Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2003-11-01

CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (

Quantum coherence behaviors of fermionic system in non-inertial frame

NASA Astrophysics Data System (ADS)

Huang, Zhiming; Situ, Haozhen

2018-04-01

In this paper, we analyze the quantum coherence behaviors of a single qubit in the relativistic regime beyond the single-mode approximation. Firstly, we investigate the freezing condition of quantum coherence in fermionic system. We also study the quantum coherence tradeoff between particle and antiparticle sector. It is found that there exists quantum coherence transfer between particle and antiparticle sector, but the coherence lost in particle sector is not entirely compensated by the coherence generation of antiparticle sector. Besides, we emphatically discuss the cohering power and decohering power of Unruh channel with respect to the computational basis. It is shown that cohering power is vanishing and decohering power is dependent of the choice of Unruh mode and acceleration. Finally, we compare the behaviors of quantum coherence with geometric quantum discord and entanglement in relativistic setup. Our results show that this quantifiers in two region converge at infinite acceleration limit, which implies that this measures become independent of Unruh modes beyond the single-mode approximations. It is also demonstrated that the robustness of quantum coherence and geometric quantum discord are better than entanglement under the influence of acceleration, since entanglement undergoes sudden death.

Modeling of the whispering gallery mode in microdisk and microgear resonators using a Toeplitz matrix formalism for single-photon source

NASA Astrophysics Data System (ADS)

Attia, Moez; Gueddana, Amor; Chatta, Rihab; Morand, Alain

2013-09-01

The work presented in this paper develops a new formalism to design microdisks and microgears structures. The main objective is to study the optics and geometrics parameters influence on the microdisks and microgears structures resonance behavior. This study is conducted to choice a resonance structure with height quality factor Q to be associated with Quantum dot to form a single photon source. This new method aims to design resonant structures that are simpler and requires less computing performances than FDTD and Floquet Block methods. This formalism is based on simplifying Fourier transformed and using toeplitz matrix writing. This new writing allows designing all kind of resonance structures with any defect and any modification. In other study we have design a quantum dot emitting a photon at 1550 nm of the fundamental mode, but the quantum dot emits other photons at other wavelengths. The focus of the resonant structure and the quantum dot association is the resonance of the photon at 1550 nm and the elimination of all other photons with others energies. The quantum dot studied in [1] is an InAs/GaAs quantum dot, we design an GaAS microdisk and microgear and we compare the quality factor Q of this two structures and we conclude that the microgear is more appropriated to be associate to the quantum dot and increase the probability P1 to obtain a single photon source at 1550 nm and promotes the obtaining of single photon. The performance improving of the resonant structure is able to increase the success of quantum applications such as quantum gates based on single photon source.

Deterministic quantum teleportation with feed-forward in a solid state system.

PubMed

Steffen, L; Salathe, Y; Oppliger, M; Kurpiers, P; Baur, M; Lang, C; Eichler, C; Puebla-Hellmann, G; Fedorov, A; Wallraff, A

2013-08-15

Engineered macroscopic quantum systems based on superconducting electronic circuits are attractive for experimentally exploring diverse questions in quantum information science. At the current state of the art, quantum bits (qubits) are fabricated, initialized, controlled, read out and coupled to each other in simple circuits. This enables the realization of basic logic gates, the creation of complex entangled states and the demonstration of algorithms or error correction. Using different variants of low-noise parametric amplifiers, dispersive quantum non-demolition single-shot readout of single-qubit states with high fidelity has enabled continuous and discrete feedback control of single qubits. Here we realize full deterministic quantum teleportation with feed-forward in a chip-based superconducting circuit architecture. We use a set of two parametric amplifiers for both joint two-qubit and individual qubit single-shot readout, combined with flexible real-time digital electronics. Our device uses a crossed quantum bus technology that allows us to create complex networks with arbitrary connecting topology in a planar architecture. The deterministic teleportation process succeeds with order unit probability for any input state, as we prepare maximally entangled two-qubit states as a resource and distinguish all Bell states in a single two-qubit measurement with high efficiency and high fidelity. We teleport quantum states between two macroscopic systems separated by 6 mm at a rate of 10(4) s(-1), exceeding other reported implementations. The low transmission loss of superconducting waveguides is likely to enable the range of this and other schemes to be extended to significantly larger distances, enabling tests of non-locality and the realization of elements for quantum communication at microwave frequencies. The demonstrated feed-forward may also find application in error correction schemes.

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

Optically probing the fine structure of a single Mn atom in an InAs quantum dot.

PubMed

Kudelski, A; Lemaître, A; Miard, A; Voisin, P; Graham, T C M; Warburton, R J; Krebs, O

2007-12-14

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A0 whose effective spin J=1 is significantly perturbed by the quantum dot potential and its associated strain field. The spin interaction with photocarriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of mueV, but vanishingly small for electrons.

Experimental quasi-single-photon transmission from satellite to earth.

PubMed

Yin, Juan; Cao, Yuan; Liu, Shu-Bin; Pan, Ge-Sheng; Wang, Jin-Hong; Yang, Tao; Zhang, Zhong-Ping; Yang, Fu-Min; Chen, Yu-Ao; Peng, Cheng-Zhi; Pan, Jian-Wei

2013-08-26

Free-space quantum communication with satellites opens a promising avenue for global secure quantum network and large-scale test of quantum foundations. Recently, numerous experimental efforts have been carried out towards this ambitious goal. However, one essential step--transmitting single photons from the satellite to the ground with high signal-to-noise ratio (SNR) at realistic environments--remains experimental challenging. Here, we report a direct experimental demonstration of the satellite-ground transmission of a quasi-single-photon source. In the experiment, single photons (~0.85 photon per pulse) are generated by reflecting weak laser pulses back to earth with a cube-corner retro-reflector on the satellite CHAMP, collected by a 600-mm diameter telescope at the ground station, and finally detected by single-photon counting modules after 400-km free-space link transmission. With the help of high accuracy time synchronization, narrow receiver field-of-view and high-repetition-rate pulses (76 MHz), a SNR of better than 16:1 is obtained, which is sufficient for a secure quantum key distribution. Our experimental results represent an important step towards satellite-ground quantum communication.

Polymorphic improvement of Stillinger-Weber potential for InGaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Xiaowang W.; Jones, Reese E.; Chu, Kevin

A Stillinger-Weber potential is computationally very efficient for molecular dynamics simulations. Despite its simple mathematical form, the Stillinger-Weber potential can be easily parameterized to ensure that crystal structures with tetrahedral bond angles (e.g., diamond-cubic, zinc-blende, and wurtzite) are stable and have the lowest energy. As a result, the Stillinger-Weber potential has been widely used to study a variety of semiconductor elements and alloys. When studying an A-B binary system, however, the Stillinger-Weber potential is associated with two major drawbacks. First, it significantly overestimates the elastic constants of elements A and B, limiting its use for systems involving both compounds andmore » elements (e.g., an A/AB multilayer). Second, it prescribes equal energy for zinc-blende and wurtzite crystals, limiting its use for compounds with large stacking fault energies. Here in this paper, we utilize the polymorphic potential style recently implemented in LAMMPS to develop a modified Stillinger-Weber potential for InGaN that overcomes these two problems.« less

Polymorphic improvement of Stillinger-Weber potential for InGaN

NASA Astrophysics Data System (ADS)

Zhou, X. W.; Jones, R. E.; Chu, K.

2017-12-01

A Stillinger-Weber potential is computationally very efficient for molecular dynamics simulations. Despite its simple mathematical form, the Stillinger-Weber potential can be easily parameterized to ensure that crystal structures with tetrahedral bond angles (e.g., diamond-cubic, zinc-blende, and wurtzite) are stable and have the lowest energy. As a result, the Stillinger-Weber potential has been widely used to study a variety of semiconductor elements and alloys. When studying an A-B binary system, however, the Stillinger-Weber potential is associated with two major drawbacks. First, it significantly overestimates the elastic constants of elements A and B, limiting its use for systems involving both compounds and elements (e.g., an A/AB multilayer). Second, it prescribes equal energy for zinc-blende and wurtzite crystals, limiting its use for compounds with large stacking fault energies. Here, we utilize the polymorphic potential style recently implemented in LAMMPS to develop a modified Stillinger-Weber potential for InGaN that overcomes these two problems.

On the impact of indium distribution on the electronic properties in InGaN nanodisks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benaissa, M., E-mail: benaissa.um5@gmail.com, E-mail: benaissa@fsr.ac.ma; Sigle, W.; Aken, P. A. van

2015-03-09

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening.more » In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.« less

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Okur, Serdal; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2014-02-01

Carrier transport in double heterostructure (DH) InGaN light emitting diodes (LEDs) was investigated using photocurrent measurements performed under CW HeCd laser (325 nm wavelength) excitation. The effect of electron injector thicknesses was investigated by monitoring the excitation density and applied bias dependent escape of photogenerated carriers from the active region and through energy band structure and carrier transport simulations using Silvaco Atlas. For quad (4x) 3-nm DH LED structures incorporating staircase electron injectors (SEIs), photocurrent increased with SEI thickness due to reduced effective barrier opposing carrier escape from the active region as confirmed by simulations. The carrier leakage percentile at -3V bias and 280 Wcm-2 optical excitation density increased from 24 % to 55 % when In 0.04Ga0.96N + In0.08Ga0.92N SEI thickness was increased from 4 nm + 4 nm to 30 nm + 30 nm. The increased leakage with thicker SEI correlates with increased carrier overflow under forward bias.

Polymorphic improvement of Stillinger-Weber potential for InGaN

DOE PAGES

Zhou, Xiaowang W.; Jones, Reese E.; Chu, Kevin

2017-12-21

A Stillinger-Weber potential is computationally very efficient for molecular dynamics simulations. Despite its simple mathematical form, the Stillinger-Weber potential can be easily parameterized to ensure that crystal structures with tetrahedral bond angles (e.g., diamond-cubic, zinc-blende, and wurtzite) are stable and have the lowest energy. As a result, the Stillinger-Weber potential has been widely used to study a variety of semiconductor elements and alloys. When studying an A-B binary system, however, the Stillinger-Weber potential is associated with two major drawbacks. First, it significantly overestimates the elastic constants of elements A and B, limiting its use for systems involving both compounds andmore » elements (e.g., an A/AB multilayer). Second, it prescribes equal energy for zinc-blende and wurtzite crystals, limiting its use for compounds with large stacking fault energies. Here in this paper, we utilize the polymorphic potential style recently implemented in LAMMPS to develop a modified Stillinger-Weber potential for InGaN that overcomes these two problems.« less

An on-chip coupled resonator optical waveguide single-photon buffer

PubMed Central

Takesue, Hiroki; Matsuda, Nobuyuki; Kuramochi, Eiichi; Munro, William J.; Notomi, Masaya

2013-01-01

Integrated quantum optical circuits are now seen as one of the most promising approaches with which to realize single-photon quantum information processing. Many of the core elements for such circuits have been realized, including sources, gates and detectors. However, a significant missing function necessary for photonic quantum information processing on-chip is a buffer, where single photons are stored for a short period of time to facilitate circuit synchronization. Here we report an on-chip single-photon buffer based on coupled resonator optical waveguides (CROW) consisting of 400 high-Q photonic crystal line-defect nanocavities. By using the CROW, a pulsed single photon is successfully buffered for 150 ps with 50-ps tunability while maintaining its non-classical properties. Furthermore, we show that our buffer preserves entanglement by storing and retrieving one photon from a time-bin entangled state. This is a significant step towards an all-optical integrated quantum information processor. PMID:24217422

A Novel Scheme for Bidirectional and Hybrid Quantum Information Transmission via a Seven-Qubit State

NASA Astrophysics Data System (ADS)

Fang, Sheng-hui; Jiang, Min

2018-02-01

In this paper, we present a novel scheme for bidirectional and hybrid quantum information transmission via a seven-qubit state. We demonstrate that under the control of the supervisor two distant participants can simultaneously and deterministically exchange their states with each other no matter whether they know the states or not. In our scheme, Alice can teleport an arbitrary single-qubit state (two-qubit state) to Bob and Bob can prepare a known two-qubit state (single-qubit state) for Alice simultaneously via the control of the supervisor Charlie. Compared with previous studies for single bidirectional quantum teleportation or single bidirectional remote state preparation schemes, our protocol is a kind of hybrid approach for quantum information transmission. Furthermore, it achieves success with unit probability. Notably, since only pauli operations and two-qubit and single-qubit measurements are used in our schemes, it is flexible in physical experiments.