Design and characterization of single photon avalanche diodes arrays
NASA Astrophysics Data System (ADS)
Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.
2010-05-01
During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2
Negative feedback avalanche diode
NASA Technical Reports Server (NTRS)
Itzler, Mark Allen (Inventor)
2010-01-01
A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica
2013-12-15
We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.
Acconcia, G; Labanca, I; Rech, I; Gulinatti, A; Ghioni, M
2017-02-01
The minimization of Single Photon Avalanche Diodes (SPADs) dead time is a key factor to speed up photon counting and timing measurements. We present a fully integrated Active Quenching Circuit (AQC) able to provide a count rate as high as 100 MHz with custom technology SPAD detectors. The AQC can also operate the new red enhanced SPAD and provide the timing information with a timing jitter Full Width at Half Maximum (FWHM) as low as 160 ps.
InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.
Meng, Xiao; Xie, Shiyu; Zhou, Xinxin; Calandri, Niccolò; Sanzaro, Mirko; Tosi, Alberto; Tan, Chee Hing; Ng, Jo Shien
2016-03-01
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K(-1). Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10(8) Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.
InGaAs/InAlAs single photon avalanche diode for 1550 nm photons
Xie, Shiyu; Zhou, Xinxin; Calandri, Niccolò; Sanzaro, Mirko; Tosi, Alberto; Tan, Chee Hing; Ng, Jo Shien
2016-01-01
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured. PMID:27069647
Electrical and optical 3D modelling of light-trapping single-photon avalanche diode
NASA Astrophysics Data System (ADS)
Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.
2018-02-01
Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.
Analysis of InP-based single photon avalanche diodes based on a single recess-etching process
NASA Astrophysics Data System (ADS)
Lee, Kiwon
2018-04-01
Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.
Ekstrom, Philip A.
1981-01-01
A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.
A Single-Photon Avalanche Diode Array for Fluorescence Lifetime Imaging Microscopy.
Schwartz, David Eric; Charbon, Edoardo; Shepard, Kenneth L
2008-11-21
We describe the design, characterization, and demonstration of a fully integrated single-photon avalanche diode (SPAD) imager for use in time-resolved fluorescence imaging. The imager consists of a 64-by-64 array of active SPAD pixels and an on-chip time-to-digital converter (TDC) based on a delay-locked loop (DLL) and calibrated interpolators. The imager can perform both standard time-correlated single-photon counting (TCSPC) and an alternative gated-window detection useful for avoiding pulse pile-up when measuring bright signal levels. To illustrate the use of the imager, we present measurements of the decay lifetimes of fluorescent dyes of several types with a timing resolution of 350 ps.
A Single-Photon Avalanche Diode Array for Fluorescence Lifetime Imaging Microscopy
Schwartz, David Eric; Charbon, Edoardo; Shepard, Kenneth L.
2013-01-01
We describe the design, characterization, and demonstration of a fully integrated single-photon avalanche diode (SPAD) imager for use in time-resolved fluorescence imaging. The imager consists of a 64-by-64 array of active SPAD pixels and an on-chip time-to-digital converter (TDC) based on a delay-locked loop (DLL) and calibrated interpolators. The imager can perform both standard time-correlated single-photon counting (TCSPC) and an alternative gated-window detection useful for avoiding pulse pile-up when measuring bright signal levels. To illustrate the use of the imager, we present measurements of the decay lifetimes of fluorescent dyes of several types with a timing resolution of 350 ps. PMID:23976789
NASA Astrophysics Data System (ADS)
Liu, Junliang; Zhang, Tingfa; Li, Yongfu; Ding, Lei; Tao, Junchao; Wang, Ying; Wang, Qingpu; Fang, Jiaxiong
2017-07-01
A free-running single-photon detector for 1.06 μm wavelength based on an InGaAsP/InP single-photon avalanche diode is presented. The detector incorporates an ultra-fast active-quenching technique to greatly lessen the afterpulsing effects. An improved method for avalanche characterization using electroluminescence is proposed, and the performance of the detector is evaluated. The number of avalanche carriers is as low as 1.68 ×106 , resulting in a low total afterpulse probability of 4% at 233 K, 10% detection efficiency, and 1 μs hold-off time.
NASA Astrophysics Data System (ADS)
Fong, Bernicy S.; Davies, Murray; Deschamps, Pierre
2018-01-01
Timing resolution (or timing jitter) and time walk are separate parameters associated with a detector's response time. Studies have been done mostly on the time resolution of various single-photon detectors. As the designer and manufacturer of the ultra-low noise (ƙ-factor) silicon avalanche photodiode the super low K factor (SLiK) single-photon avalanche diode (SPAD), which is used in many single-photon counting applications, we often get inquiries from customers to better understand how this detector behaves under different operating conditions. Hence, here, we will be focusing on the study of these time-related parameters specifically for the SLiK SPAD, as a way to provide the most direct information for users of this detector to help with its use more efficiently and effectively. We will be providing the study data on how these parameters can be affected by temperature (both intrinsic to the detector chip and environmental input based on operating conditions), operating voltage, photon wavelength, as well as light spot size. How these parameters can be optimized and the trade-offs from optimization from the desired performance will be presented?
Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.
Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S
2017-07-10
We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.
High intensity click statistics from a 10 × 10 avalanche photodiode array
NASA Astrophysics Data System (ADS)
Kröger, Johannes; Ahrens, Thomas; Sperling, Jan; Vogel, Werner; Stolz, Heinrich; Hage, Boris
2017-11-01
Photon-number measurements are a fundamental technique for the discrimination and characterization of quantum states of light. Beyond the abilities of state-of-the-art devices, we present measurements with an array of 100 avalanche photodiodes exposed to photon-numbers ranging from well below to significantly above one photon per diode. Despite each single diode only discriminating between zero and non-zero photon-numbers we were able to extract a second order moment, which acts as a nonclassicality indicator. We demonstrate a vast enhancement of the applicable intensity range by two orders of magnitude relative to the standard application of such devices. It turns out that the probabilistic mapping of arbitrary photon-numbers on a finite number of registered clicks is not per se a disadvantage compared with true photon counters. Such detector arrays can bridge the gap between single-photon and linear detection, by investigation of the click statistics, without the necessity of photon statistics reconstruction.
Setting Single Photon Detectors for Use with an Entangled Photon Distribution System
2017-12-01
NOTICES Disclaimers The findings in this report are not to be construed as an official Department of the Army position unless so designated by...diode (as small as that provided by one photon incident on the detector) triggers an avalanche pulse. This output avalanche pulse is then compared with...with raw concurrence and fidelity ( compared with the Bell state given by Eq. 1) values of 0.871 and 0.934. Furthermore, the accidental-subtracted
How to squeeze high quantum efficiency and high time resolution out of a SPAD
NASA Technical Reports Server (NTRS)
Lacaita, A.; Zappa, F.; Cova, Sergio; Ripamonti, Giancarlo; Spinelli, A.
1993-01-01
We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.
Neural Imaging Using Single-Photon Avalanche Diodes
Karami, Mohammad Azim; Ansarian, Misagh
2017-01-01
Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimum dark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging process using SPADs can be performed by means of florescence lifetime imaging (FLIM), time correlated single-photon counting (TCSPC), positron emission tomography (PET), and single-photon emission computed tomography (SPECT). Results: This trend will result in more precise neural imaging cameras. While achieving low DCR SPADs is difficult in deep submicron technologies because of using higher doping profiles, higher PDPs are reported in green and blue part of light. Furthermore, the number of pixels integrated in the same chip is increasing with the technology progress which can result in the higher resolution of imaging. Conclusion: This study proposes implemented SPADs in Deep-submicron technologies to be used in neural imaging cameras, due to the small size pixels and higher timing accuracies. PMID:28446946
Ma, Jian; Bai, Bing; Wang, Liu-Jun; Tong, Cun-Zhu; Jin, Ge; Zhang, Jun; Pan, Jian-Wei
2016-09-20
InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.
Deterministic filtering of breakdown flashing at telecom wavelengths
NASA Astrophysics Data System (ADS)
Marini, Loris; Camphausen, Robin; Eggleton, Benjamin J.; Palomba, Stefano
2017-11-01
Breakdown flashes are undesired photo-emissions from the active area of single-photon avalanche photo-diodes. They arise from radiative recombinations of hot carriers generated during an avalanche and can induce crosstalk, compromise the measurement of optical quantum states, and hinder the security of quantum communications. Although the spectrum of this emission extends over hundreds of nanometers, active quenching may lead to a smaller uncertainty in the time of emission, thus enabling deterministic filtering. Our results pave the way to broadband interference mitigation in time-correlated single-photon applications.
Linear LIDAR versus Geiger-mode LIDAR: impact on data properties and data quality
NASA Astrophysics Data System (ADS)
Ullrich, A.; Pfennigbauer, M.
2016-05-01
LIDAR has become the inevitable technology to provide accurate 3D data fast and reliably even in adverse measurement situations and harsh environments. It provides highly accurate point clouds with a significant number of additional valuable attributes per point. LIDAR systems based on Geiger-mode avalanche photo diode arrays, also called single photon avalanche photo diode arrays, earlier employed for military applications, now seek to enter the commercial market of 3D data acquisition, advertising higher point acquisition speeds from longer ranges compared to conventional techniques. Publications pointing out the advantages of these new systems refer to the other category of LIDAR as "linear LIDAR", as the prime receiver element for detecting the laser echo pulses - avalanche photo diodes - are used in a linear mode of operation. We analyze the differences between the two LIDAR technologies and the fundamental differences in the data they provide. The limitations imposed by physics on both approaches to LIDAR are also addressed and advantages of linear LIDAR over the photon counting approach are discussed.
NASA Astrophysics Data System (ADS)
Pushkar', A. A.; Uvarova, T. V.; Kiiko, V. V.
2011-08-01
The possibilities of occupying high-lying 4 f states of Pr3+ ions in the active BaY2F8:Yb3+,Pr3+ medium according to the photon avalanche and step-by-step sensitization mechanisms are compared. It is shown that the photon avalanche is unlikely to occur in the BaY2F8:Yb3+,Pr3+ crystal. The multiband luminescence spectra in the visible spectral range (white emission) under single- and multiwave pumping of BaY2F8:Yb3+,Pr3+ crystal by IR laser diodes are reported.
Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S
2015-12-28
Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.
Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy
Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo
2014-01-01
Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114
NASA Astrophysics Data System (ADS)
Yan, Zhizhong; Hamel, Deny R.; Heinrichs, Aimee K.; Jiang, Xudong; Itzler, Mark A.; Jennewein, Thomas
2012-07-01
It is challenging to implement genuine free running single-photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) [M. A. Itzler, X. Jiang, B. Nyman, and K. Slomkowski, "Quantum sensing and nanophotonic devices VI," Proc. SPIE 7222, 72221K (2009), 10.1117/12.814669; X. Jiang, M. A. Itzler, K. ODonnell, M. Entwistle, and K. Slomkowski, "Advanced photon counting techniques V," Proc. SPIE 8033, 80330K (2011), 10.1117/12.883543; M. A. Itzler, X. Jiang, B. M. Onat, and K. Slomkowski, "Quantum sensing and nanophotonic devices VII," Proc. SPIE 7608, 760829 (2010), 10.1117/12.843588], which allows useful operation of these devices at a temperature of 193 K and results in very low darkcounts (˜100 counts per second (CPS)), good time jitter (˜30 ps), and good DE (˜10%). We characterized two NFADs with a time-correlation method using photons generated from weak coherent pulses and photon pairs produced by spontaneous parametric down conversion. The inferred detector efficiencies for both types of photon sources agree with each other. The best noise equivalent power of the device is estimated to be 8.1 × 10-18 W Hz-1/2, more than 10 times better than typical InP/InGaAs single photon avalanche diodes (SPADs) show in free running mode. The afterpulsing probability was found to be less than 0.1% per ns at the optimized operating point. In addition, we studied the performance of an entanglement-based quantum key distribution (QKD) using these detectors and develop a model for the quantum bit error rate that incorporates the afterpulsing coefficients. We verified experimentally that using these NFADs it is feasible to implement QKD over 400 km of telecom fiber. Our NFAD photon detector system is very simple, and is well suited for single-photon applications where ultra-low noise and free-running operation is required, and some afterpulsing can be tolerated.
Yan, Zhizhong; Hamel, Deny R; Heinrichs, Aimee K; Jiang, Xudong; Itzler, Mark A; Jennewein, Thomas
2012-07-01
It is challenging to implement genuine free running single-photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) [M. A. Itzler, X. Jiang, B. Nyman, and K. Slomkowski, "Quantum sensing and nanophotonic devices VI," Proc. SPIE 7222, 72221K (2009); X. Jiang, M. A. Itzler, K. ODonnell, M. Entwistle, and K. Slomkowski, "Advanced photon counting techniques V," Proc. SPIE 8033, 80330K (2011); M. A. Itzler, X. Jiang, B. M. Onat, and K. Slomkowski, "Quantum sensing and nanophotonic devices VII," Proc. SPIE 7608, 760829 (2010)], which allows useful operation of these devices at a temperature of 193 K and results in very low darkcounts (∼100 counts per second (CPS)), good time jitter (∼30 ps), and good DE (∼10%). We characterized two NFADs with a time-correlation method using photons generated from weak coherent pulses and photon pairs produced by spontaneous parametric down conversion. The inferred detector efficiencies for both types of photon sources agree with each other. The best noise equivalent power of the device is estimated to be 8.1 × 10(-18) W Hz(-1/2), more than 10 times better than typical InP/InGaAs single photon avalanche diodes (SPADs) show in free running mode. The afterpulsing probability was found to be less than 0.1% per ns at the optimized operating point. In addition, we studied the performance of an entanglement-based quantum key distribution (QKD) using these detectors and develop a model for the quantum bit error rate that incorporates the afterpulsing coefficients. We verified experimentally that using these NFADs it is feasible to implement QKD over 400 km of telecom fiber. Our NFAD photon detector system is very simple, and is well suited for single-photon applications where ultra-low noise and free-running operation is required, and some afterpulsing can be tolerated.
Mattioli Della Rocca, Francescopaolo
2018-01-01
This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479
Blacksberg, Jordana; Alerstam, Erik; Maruyama, Yuki; Cochrane, Corey J; Rossman, George R
2016-02-01
We present recent developments in time-resolved Raman spectroscopy instrumentation and measurement techniques for in situ planetary surface exploration, leading to improved performance and identification of minerals and organics. The time-resolved Raman spectrometer uses a 532 nm pulsed microchip laser source synchronized with a single photon avalanche diode array to achieve sub-nanosecond time resolution. This instrument can detect Raman spectral signatures from a wide variety of minerals and organics relevant to planetary science while eliminating pervasive background interference caused by fluorescence. We present an overview of the instrument design and operation and demonstrate high signal-to-noise ratio Raman spectra for several relevant samples of sulfates, clays, and polycyclic aromatic hydrocarbons. Finally, we present an instrument design suitable for operation on a rover or lander and discuss future directions that promise great advancement in capability.
An accurate behavioral model for single-photon avalanche diode statistical performance simulation
NASA Astrophysics Data System (ADS)
Xu, Yue; Zhao, Tingchen; Li, Ding
2018-01-01
An accurate behavioral model is presented to simulate important statistical performance of single-photon avalanche diodes (SPADs), such as dark count and after-pulsing noise. The derived simulation model takes into account all important generation mechanisms of the two kinds of noise. For the first time, thermal agitation, trap-assisted tunneling and band-to-band tunneling mechanisms are simultaneously incorporated in the simulation model to evaluate dark count behavior of SPADs fabricated in deep sub-micron CMOS technology. Meanwhile, a complete carrier trapping and de-trapping process is considered in afterpulsing model and a simple analytical expression is derived to estimate after-pulsing probability. In particular, the key model parameters of avalanche triggering probability and electric field dependence of excess bias voltage are extracted from Geiger-mode TCAD simulation and this behavioral simulation model doesn't include any empirical parameters. The developed SPAD model is implemented in Verilog-A behavioral hardware description language and successfully operated on commercial Cadence Spectre simulator, showing good universality and compatibility. The model simulation results are in a good accordance with the test data, validating high simulation accuracy.
Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.
Sun, Pengfei; Ishihara, Ryoichi; Charbon, Edoardo
2016-02-22
We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside- (FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.
A new single-photon avalanche diode in 90nm standard CMOS technology.
Karami, Mohammad Azim; Gersbach, Marek; Yoon, Hyung-June; Charbon, Edoardo
2010-10-11
We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown using a standard mask set exclusively. The proposed structure emerged from a systematic study aimed at miniaturization, while optimizing overall performance. The guard ring design is the result of an extensive modeling effort aimed at constraining the multiplication region within a well-defined area where the electric field exceeds the critical value for impact ionization. The device exhibits a dark count rate of 8.1 kHz, a maximum photon detection probability of 9% and the jitter of 398ps at a wavelength of 637nm, all of them measured at room temperature and 0.13V of excess bias voltage. An afterpulsing probability of 32% is achieved at the nominal dead time. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide
2016-03-15
We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbingmore » inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.« less
NASA Astrophysics Data System (ADS)
Prochazka, Ivan; Kodet, Jan; Eckl, Johann; Blazej, Josef
2017-10-01
We are reporting on the design, construction, and performance of a photon counting detector system, which is based on single photon avalanche diode detector technology. This photon counting device has been optimized for very high timing resolution and stability of its detection delay. The foreseen application of this detector is laser ranging of space objects, laser time transfer ground to space and fundamental metrology. The single photon avalanche diode structure, manufactured on silicon using K14 technology, is used as a sensor. The active area of the sensor is circular with 200 μm diameter. Its photon detection probability exceeds 40% in the wavelength range spanning from 500 to 800 nm. The sensor is operated in active quenching and gating mode. A new control circuit was optimized to maintain high timing resolution and detection delay stability. In connection to this circuit, timing resolution of the detector is reaching 20 ps FWHM. In addition, the temperature change of the detection delay is as low as 70 fs/K. As a result, the detection delay stability of the device is exceptional: expressed in the form of time deviation, detection delay stability of better than 60 fs has been achieved. Considering the large active area aperture of the detector, this is, to our knowledge, the best timing performance reported for a solid state photon counting detector so far.
Performance optimization of detector electronics for millimeter laser ranging
NASA Technical Reports Server (NTRS)
Cova, Sergio; Lacaita, A.; Ripamonti, Giancarlo
1993-01-01
The front-end electronic circuitry plays a fundamental role in determining the performance actually obtained from ultrafast and highly sensitive photodetectors. We deal here with electronic problems met working with microchannel plate photomultipliers (MCP-PMTs) and single photon avalanche diodes (SPADs) for detecting single optical photons and measuring their arrival time with picosecond resolution. The performance of available fast circuits is critically analyzed. Criteria for selecting the most suitable electronics are derived and solutions for exploiting the detector performance are presented and discussed.
NASA Technical Reports Server (NTRS)
Krainak, Michael A.
2005-01-01
We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.
32-channel single photon counting module for ultrasensitive detection of DNA sequences
NASA Astrophysics Data System (ADS)
Gudkov, Georgiy; Dhulla, Vinit; Borodin, Anatoly; Gavrilov, Dmitri; Stepukhovich, Andrey; Tsupryk, Andrey; Gorbovitski, Boris; Gorfinkel, Vera
2006-10-01
We continue our work on the design and implementation of multi-channel single photon detection systems for highly sensitive detection of ultra-weak fluorescence signals, for high-performance, multi-lane DNA sequencing instruments. A fiberized, 32-channel single photon detection (SPD) module based on single photon avalanche diode (SPAD), model C30902S-DTC, from Perkin Elmer Optoelectronics (PKI) has been designed and implemented. Unavailability of high performance, large area SPAD arrays and our desire to design high performance photon counting systems drives us to use individual diodes. Slight modifications in our quenching circuit has doubled the linear range of our system from 1MHz to 2MHz, which is the upper limit for these devices and the maximum saturation count rate has increased to 14 MHz. The detector module comprises of a single board computer PC-104 that enables data visualization, recording, processing, and transfer. Very low dark count (300-1000 counts/s), robust, efficient, simple data collection and processing, ease of connectivity to any other application demanding similar requirements and similar performance results to the best commercially available single photon counting module (SPCM from PKI) are some of the features of this system.
Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology
NASA Astrophysics Data System (ADS)
Savuskan, Vitali; Jakobson, Claudio; Merhav, Tomer; Shoham, Avi; Brouk, Igor; Nemirovsky, Yael
2015-05-01
In this study, a CMOS Single Photon Avalanche Diode (SPAD) 2D array is used to record and sample muzzle flash events in the visible spectrum, from representative weapons. SPADs detect the emission peaks of alkali salts, potassium or sodium, with spectral emission lines around 769nm and 589nm, respectively. The alkali salts are included in the gunpowder to suppress secondary flashes ignited during the muzzle flash event. The SPADs possess two crucial properties for muzzle flash imaging: (i) very high photon detection sensitivity, (ii) a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. The sole noise sources are the ones prior to the readout circuitry (optical signal distribution, avalanche initiation distribution and nonphotonic generation). This enables high sampling frequencies in the kilohertz range without significant SNR degradation, in contrast to regular CMOS image sensors. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength, in the presence of sunlight. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics and signal processing, which will be reported. The frame rate of ~16 KHz was chosen as an optimum between SNR degradation and temporal profile recognition accuracy. In contrast to a single SPAD, the 2D array allows for multiple events to be processed simultaneously. Moreover, a significant field of view is covered, enabling comprehensive surveillance and imaging.
2011-04-01
NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON USAMRMC a. REPORT U b. ABSTRACT U c . THIS PAGE U UU 19b. TELEPHONE NUMBER (include...a) (b) ( c ) Figure 2a) Experimental set-up for detection of ultrasound-modulated coherent light with a silicon photodetector 2b...also explored using their novel photon detector technology, known as a single photon avalanche diode ( SPAD ) detector [13], to detect ultrasound
Acconcia, G; Cominelli, A; Rech, I; Ghioni, M
2016-11-01
In recent years, lifetime measurements by means of the Time Correlated Single Photon Counting (TCSPC) technique have led to a significant breakthrough in medical and biological fields. Unfortunately, the many advantages of TCSPC-based approaches come along with the major drawback of a relatively long acquisition time. The exploitation of multiple channels in parallel could in principle mitigate this issue, and at the same time it opens the way to a multi-parameter analysis of the optical signals, e.g., as a function of wavelength or spatial coordinates. The TCSPC multichannel solutions proposed so far, though, suffer from a tradeoff between number of channels and performance, and the overall measurement speed has not been increased according to the number of channels, thus reducing the advantages of having a multichannel system. In this paper, we present a novel readout architecture for bi-dimensional, high-density Single Photon Avalanche Diode (SPAD) arrays, specifically designed to maximize the throughput of the whole system and able to guarantee an efficient use of resources. The core of the system is a routing logic that can provide a dynamic connection between a large number of SPAD detectors and a much lower number of high-performance acquisition channels. A key feature of our smart router is its ability to guarantee high efficiency under any operating condition.
NASA Astrophysics Data System (ADS)
Cominelli, A.; Acconcia, G.; Caldi, F.; Peronio, P.; Ghioni, M.; Rech, I.
2018-02-01
Time-Correlated Single Photon Counting (TCSPC) is a powerful tool that permits to record extremely fast optical signals with a precision down to few picoseconds. On the other hand, it is recognized as a relatively slow technique, especially when a large time-resolved image is acquired exploiting a single acquisition channel and a scanning system. During the last years, much effort has been made towards the parallelization of many acquisition and conversion chains. In particular, the exploitation of Single-Photon Avalanche Diodes in standard CMOS technology has paved the way to the integration of thousands of independent channels on the same chip. Unfortunately, the presence of a large number of detectors can give rise to a huge rate of events, which can easily lead to the saturation of the transfer rate toward the elaboration unit. As a result, a smart readout approach is needed to guarantee an efficient exploitation of the limited transfer bandwidth. We recently introduced a novel readout architecture, aimed at maximizing the counting efficiency of the system in typical TCSPC measurements. It features a limited number of high-performance converters, which are shared with a much larger array, while a smart routing logic provides a dynamic multiplexing between the two parts. Here we propose a novel routing algorithm, which exploits standard digital gates distributed among a large 32x32 array to ensure a dynamic connection between detectors and external time-measurement circuits.
Novel Photon-Counting Detectors for Free-Space Communication
NASA Technical Reports Server (NTRS)
Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff
2016-01-01
We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.
Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared
NASA Astrophysics Data System (ADS)
Tosi, Alberto; Dalla Mora, Alberto; Zappa, Franco; Cova, Sergio
2007-09-01
Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.
Fully industrialised single photon avalanche diodes
NASA Astrophysics Data System (ADS)
Pellegrini, S.; Rae, B.
2017-05-01
Single Photon Avalanche diodes (SPADs) were first realized more than five decades ago[1][1], and have now been industrialized for mass production in the 130 nm CMOS technology node by STMicroelectronics (STM). In this paper we present the latest STM SPAD with an excellent NIR photon detection probability (>5% at 850nm), a dark count rate median of 100 cps at room temperature and a low breakdown voltage of 14.2V. The dead time of the SPAD is approximately 25 ns, leading to a maximum count rate of 40 Mcps. Thanks to the 130 nm gate length of the CMOS technology used and the associated high digital gate density, complex digital signal processing can be implemented allowing fully integrated systems to be realized. The low bias required by the SPAD makes it possible for voltage generation to be achieved on-chip (e.g. charge pumped). We introduce our first generation time-of-flight system (VL6180) based on the STM SPAD technology, which is capable of ranging up to 60 cm in 60 ms. Ranging capabilities and accuracy are measured using a set of moving targets with reflectance of 5%, 17% and 88% in a fully automated test bed. To the best of our knowledge this was the first high volume SPAD-based device. To our knowledge this is the first time details of SPAD performance over production volumes and lifetime have been presented.
2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment
NASA Astrophysics Data System (ADS)
Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav
2018-02-01
PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.
Quantum optics with nanowires (Conference Presentation)
NASA Astrophysics Data System (ADS)
Zwiller, Val
2017-02-01
Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.
In vivo time-gated diffuse correlation spectroscopy at quasi-null source-detector separation.
Pagliazzi, M; Sekar, S Konugolu Venkata; Di Sieno, L; Colombo, L; Durduran, T; Contini, D; Torricelli, A; Pifferi, A; Mora, A Dalla
2018-06-01
We demonstrate time domain diffuse correlation spectroscopy at quasi-null source-detector separation by using a fast time-gated single-photon avalanche diode without the need of time-tagging electronics. This approach allows for increased photon collection, simplified real-time instrumentation, and reduced probe dimensions. Depth discriminating, quasi-null distance measurement of blood flow in a human subject is presented. We envision the miniaturization and integration of matrices of optical sensors of increased spatial resolution and the enhancement of the contrast of local blood flow changes.
Theory of single-photon detectors employing smart strategies of detection
NASA Astrophysics Data System (ADS)
Silva, João Batista Rosa; Ramos, Rubens Viana
2005-11-01
Single-photon detectors have become more important with the advent of set-ups for optical communication using single-photon pulses, mainly quantum key distribution. The performance of quantum key distribution systems depends strongly on the performance of single-photon detectors. In this paper, aiming to overcome the afterpulsing that limits strongly the maximal transmission rate of quantum key distribution systems, three smart strategies for single-photon detection are discussed using analytical and numerical procedures. The three strategies are: hold-off time conditioned to avalanche presence, termed the Norwegian strategy, using one avalanche photodiode, using two raffled avalanche photodiodes and using two switched avalanche photodiodes. Finally we give examples using these strategies in a quantum key distribution set-up.
NASA Astrophysics Data System (ADS)
Mandai, Shingo; Jain, Vishwas; Charbon, Edoardo
2014-02-01
This paper presents a digital silicon photomultiplier (SiPM) partitioned in columns, whereas each column is connected to a column-parallel time-to-digital converter (TDC), in order to improve the timing resolution of single-photon detection. By reducing the number of pixels per TDC using a sharing scheme with three TDCs per column, the pixel-to-pixel skew is reduced. We report the basic characterization of the SiPM, comprising 416 single-photon avalanche diodes (SPADs); the characterization includes photon detection probability, dark count rate, afterpulsing, and crosstalk. We achieved 264-ps full-width at half maximum timing resolution of single-photon detection using a 48-fold column-parallel TDC with a temporal resolution of 51.8 ps (least significant bit), fully integrated in standard complementary metal-oxide semiconductor technology.
Multi-LED parallel transmission for long distance underwater VLC system with one SPAD receiver
NASA Astrophysics Data System (ADS)
Wang, Chao; Yu, Hong-Yi; Zhu, Yi-Jun; Wang, Tao; Ji, Ya-Wei
2018-03-01
In this paper, a multiple light emitting diode (LED) chips parallel transmission (Multi-LED-PT) scheme for underwater visible light communication system with one photon-counting single photon avalanche diode (SPAD) receiver is proposed. As the lamp always consists of multi-LED chips, the data rate could be improved when we drive these multi-LED chips parallel by using the interleaver-division-multiplexing technique. For each chip, the on-off-keying modulation is used to reduce the influence of clipping. Then a serial successive interference cancellation detection algorithm based on ideal Poisson photon-counting channel by the SPAD is proposed. Finally, compared to the SPAD-based direct current-biased optical orthogonal frequency division multiplexing system, the proposed Multi-LED-PT system could improve the error-rate performance and anti-nonlinearity performance significantly under the effects of absorption, scattering and weak turbulence-induced channel fading together.
A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System
Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.
2009-01-01
We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564
High-speed multi-exposure laser speckle contrast imaging with a single-photon counting camera
Dragojević, Tanja; Bronzi, Danilo; Varma, Hari M.; Valdes, Claudia P.; Castellvi, Clara; Villa, Federica; Tosi, Alberto; Justicia, Carles; Zappa, Franco; Durduran, Turgut
2015-01-01
Laser speckle contrast imaging (LSCI) has emerged as a valuable tool for cerebral blood flow (CBF) imaging. We present a multi-exposure laser speckle imaging (MESI) method which uses a high-frame rate acquisition with a negligible inter-frame dead time to mimic multiple exposures in a single-shot acquisition series. Our approach takes advantage of the noise-free readout and high-sensitivity of a complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diode (SPAD) array to provide real-time speckle contrast measurement with high temporal resolution and accuracy. To demonstrate its feasibility, we provide comparisons between in vivo measurements with both the standard and the new approach performed on a mouse brain, in identical conditions. PMID:26309751
Rapid and efficient detection of single chromophore molecules in aqueous solution
NASA Astrophysics Data System (ADS)
Li, Li-Qiang; Davis, Lloyd M.
1995-06-01
The first experiments on the detection of single fluorescent molecules in a flowing stream of an aqueous solution with high total efficiency are reported. A capillary injection system for sample delivery causes all the dye molecules to pass in a diffusion-broadened stream within a fast-moving sheath flow, through the center of the tightly focused laser excitation beam. Single-molecule detection with a transit time of approximately 1 ms is accomplished with a high-quantum-efficiency single-photon avalanche diode and a low dead-time time-gating circuit for discrimination of Raman-scattered light from the solvent.
Integrated ultrasonic particle positioning and low excitation light fluorescence imaging
NASA Astrophysics Data System (ADS)
Bernassau, A. L.; Al-Rawhani, M.; Beeley, J.; Cumming, D. R. S.
2013-12-01
A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device is formed of multiple transducers surrounding an octagonal cavity. By stimulating pairs of transducers simultaneously, an acoustic landscape is created causing fluorescent micro-particles to agglomerate into lines. The fluorescent pattern is excited by a low power LED and detected by the SPAD imager. Our technique combines particle manipulation and visualization in a compact, low power, portable setup.
High-speed single-photon signaling for daytime QKD
NASA Astrophysics Data System (ADS)
Bienfang, Joshua; Restelli, Alessandro; Clark, Charles
2011-03-01
The distribution of quantum-generated cryptographic key at high throughputs can be critically limited by the performance of the systems' single-photon detectors. While noise and afterpulsing are considerations for all single-photon QKD systems, high-transmission rate systems also have critical detector timing-resolution and recovery time requirements. We present experimental results exploiting the high timing resolution and count-rate stability of modified single-photon avalanche diodes (SPADs) in our GHz QKD system operating over a 1.5 km free-space link that demonstrate the ability to apply extremely short temporal gates, enabling daytime free-space QKD with a 4% QBER. We also discuss recent advances in gating techniques for InGaAs SPADs that are suitable for high-speed fiber-based QKD. We present afterpulse-probability measurements that demonstrate the ability to support single-photon count rates above 100 MHz with low afterpulse probability. These results will benefit the design and characterization of free-space and fiber QKD systems. A. Restelli, J.C. Bienfang A. Mink, and C.W. Clark, IEEE J. Sel. Topics in Quant. Electron 16, 1084 (2010).
NASA Astrophysics Data System (ADS)
Acconcia, Giulia; Cominelli, Alessandro; Peronio, Pietro; Rech, Ivan; Ghioni, Massimo
2017-05-01
The analysis of optical signals by means of Single Photon Avalanche Diodes (SPADs) has been subject to a widespread interest in recent years. The development of multichannel high-performance Time Correlated Single Photon Counting (TCSPC) acquisition systems has undergone a fast trend. Concerning the detector performance, best in class results have been obtained resorting to custom technologies leading also to a strong dependence of the detector timing jitter from the threshold used to determine the onset of the photogenerated current flow. In this scenario, the avalanche current pick-up circuit plays a key role in determining the timing performance of the TCSPC acquisition system, especially with a large array of SPAD detectors because of electrical crosstalk issues. We developed a new current pick-up circuit based on a transimpedance amplifier structure able to extract the timing information from a 50-μm-diameter custom technology SPAD with a state-of-art timing jitter as low as 32ps and suitable to be exploited with SPAD arrays. In this paper we discuss the key features of this structure and we present a new version of the pick-up circuit that also provides quenching capabilities in order to minimize the number of interconnections required, an aspect that becomes more and more crucial in densely integrated systems.
Twenty Years of Rad-Hard K14 SPAD in Space Projects
Michálek, Vojtěch; Procházka, Ivan; Blažej, Josef
2015-01-01
During last two decades, several photon counting detectors have been developed in our laboratory. One of the most promising detector coming from our group silicon K14 Single Photon Avalanche Diode (SPAD) is presented with its valuable features and space applications. Based on the control electronics, it can be operated in both gated and non-gated mode. Although it was designed for photon counting detection, it can be employed for multiphoton detection as well. With respect to control electronics employed, the timing jitter can be as low as 20 ps RMS. Detection efficiency is about 40 % in range of 500 nm to 800 nm. The detector including gating and quenching circuitry has outstanding timing stability. Due to its radiation resistivity, the diode withstands 100 krad gamma ray dose without parameters degradation. Single photon detectors based on K14 SPAD were used for planetary altimeter and atmospheric lidar in MARS92/96 and Mars Surveyor ’98 space projects, respectively. Recent space applications of K14 SPAD comprises LIDAR and mainly time transfer between ground stations and artificial satellites. These include Laser Time Transfer, Time Transfer by Laser Link, and European Laser Timing projects. PMID:26213945
A compact fiber-optic probe-based singlet oxygen luminescence detection system.
Gemmell, Nathan R; McCarthy, Aongus; Kim, Michele M; Veilleux, Israel; Zhu, Timothy C; Buller, Gerald S; Wilson, Brian C; Hadfield, Robert H
2017-02-01
This paper presents a novel compact fiberoptic based singlet oxygen near-infrared luminescence probe coupled to an InGaAs/InP single photon avalanche diode (SPAD) detector. Patterned time gating of the single-photon detector is used to limit unwanted dark counts and eliminate the strong photosensitizer luminescence background. Singlet oxygen luminescence detection at 1270 nm is confirmed through spectral filtering and lifetime fitting for Rose Bengal in water, and Photofrin in methanol as model photosensitizers. The overall performance, measured by the signal-to-noise ratio, improves by a factor of 50 over a previous system that used a fiberoptic-coupled superconducting nanowire single-photon detector. The effect of adding light scattering to the photosensitizer is also examined as a first step towards applications in tissue in vivo. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Novel Photon-Counting Detectors for Free-Space Communication
NASA Technical Reports Server (NTRS)
Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.
2016-01-01
We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.
Gun muzzle flash detection using a CMOS single photon avalanche diode
NASA Astrophysics Data System (ADS)
Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael
2013-10-01
Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.
NASA Astrophysics Data System (ADS)
Isaak, S.; Bull, S.; Pitter, M. C.; Harrison, Ian.
2011-05-01
This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18 μm CMOS process. A low-doped p- guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16×1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor RRef = 300 kΩ. The SPAD I-V response, ID was found to slowly increase until VBD was reached at excess bias voltage, Ve = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.
Ingargiola, A.; Laurence, T. A.; Boutelle, R.; ...
2015-12-23
We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode (SPAD), photomultiplier tube (PMT) or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. Themore » format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. As a result, to encourage adoption by the academic and commercial communities, all software is released under the MIT open source license.« less
3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection
NASA Astrophysics Data System (ADS)
Vignetti, M. M.; Calmon, F.; Pittet, P.; Pares, G.; Cellier, R.; Quiquerez, L.; Chaves de Albuquerque, T.; Bechetoille, E.; Testa, E.; Lopez, J.-P.; Dauvergne, D.; Savoy-Navarro, A.
2018-02-01
Single-Photon Avalanche Diodes (SPADs) are p-n junctions operated in Geiger Mode by applying a reverse bias above the breakdown voltage. SPADs have the advantage of featuring single photon sensitivity with timing resolution in the picoseconds range. Nevertheless, their relatively high Dark Count Rate (DCR) is a major issue for charged particle detection, especially when it is much higher than the incoming particle rate. To tackle this issue, we have developed a 3D Silicon Coincidence Avalanche Detector (3D-SiCAD). This novel device implements two vertically aligned SPADs featuring on-chip electronics for the detection of coincident avalanche events occurring on both SPADs. Such a coincidence detection mode allows an efficient discrimination of events related to an incoming charged particle (producing a quasi-simultaneous activation of both SPADs) from dark counts occurring independently on each SPAD. A 3D-SiCAD detector prototype has been fabricated in CMOS technology adopting a 3D flip-chip integration technique, and the main results of its characterization are reported in this work. The particle detection efficiency and noise rejection capability for this novel device have been evaluated by means of a β- strontium-90 radioactive source. Moreover the impact of the main operating parameters (i.e. the hold-off time, the coincidence window duration, the SPAD excess bias voltage) over the particle detection efficiency has been studied. Measurements have been performed with different β- particles rates and show that a 3D-SiCAD device outperforms single SPAD detectors: the former is indeed capable to detect particle rates much lower than the individual DCR observed in a single SPAD-based detectors (i.e. 2 to 3 orders of magnitudes lower).
Photon-HDF5: An Open File Format for Timestamp-Based Single-Molecule Fluorescence Experiments.
Ingargiola, Antonino; Laurence, Ted; Boutelle, Robert; Weiss, Shimon; Michalet, Xavier
2016-01-05
We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long-term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode, photomultiplier tube, or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc.) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. The format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference Python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. To encourage adoption by the academic and commercial communities, all software is released under the MIT open source license. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.
Photon-HDF5: An Open File Format for Timestamp-Based Single-Molecule Fluorescence Experiments
Ingargiola, Antonino; Laurence, Ted; Boutelle, Robert; Weiss, Shimon; Michalet, Xavier
2016-01-01
We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long-term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode, photomultiplier tube, or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc.) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. The format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference Python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. To encourage adoption by the academic and commercial communities, all software is released under the MIT open source license. PMID:26745406
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ingargiola, A.; Laurence, T. A.; Boutelle, R.
We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode (SPAD), photomultiplier tube (PMT) or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. Themore » format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. As a result, to encourage adoption by the academic and commercial communities, all software is released under the MIT open source license.« less
Integrated electronics for time-resolved array of single-photon avalanche diodes
NASA Astrophysics Data System (ADS)
Acconcia, G.; Crotti, M.; Rech, I.; Ghioni, M.
2013-12-01
The Time Correlated Single Photon Counting (TCSPC) technique has reached a prominent position among analytical methods employed in a great variety of fields, from medicine and biology (fluorescence spectroscopy) to telemetry (laser ranging) and communication (quantum cryptography). Nevertheless the development of TCSPC acquisition systems featuring both a high number of parallel channels and very high performance is still an open challenge: to satisfy the tight requirements set by the applications, a fully parallel acquisition system requires not only high efficiency single photon detectors but also a read-out electronics specifically designed to obtain the highest performance in conjunction with these sensors. To this aim three main blocks have been designed: a gigahertz bandwidth front-end stage to directly read the custom technology SPAD array avalanche current, a reconfigurable logic to route the detectors output signals to the acquisition chain and an array of time measurement circuits capable of recording the photon arrival times with picoseconds time resolution and a very high linearity. An innovative architecture based on these three circuits will feature a very high number of detectors to perform a truly parallel spatial or spectral analysis and a smaller number of high performance time-to-amplitude converter offering very high performance and a very high conversion frequency while limiting the area occupation and power dissipation. The routing logic will make the dynamic connection between the two arrays possible in order to guarantee that no information gets lost.
Single-photon imaging in complementary metal oxide semiconductor processes
Charbon, E.
2014-01-01
This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470
Radiation Tests of Single Photon Avalanche Diode for Space Applications
NASA Technical Reports Server (NTRS)
Moscatelli, Francesco; Marisaldi, Martino; MacCagnani, Piera; Labanti, Claudio; Fuschino, Fabio; Prest, Michela; Berra, Alessandro; Bolognini, Davide; Ghioni, Massimo; Rech, Ivan;
2013-01-01
Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at -10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.
NASA Astrophysics Data System (ADS)
Puszka, Agathe; Di Sieno, Laura; Dalla Mora, Alberto; Pifferi, Antonio; Contini, Davide; Boso, Gianluca; Tosi, Alberto; Hervé, Lionel; Planat-Chrétien, Anne; Koenig, Anne; Dinten, Jean-Marc
2014-02-01
Fiber optic probes with a width limited to a few centimeters can enable diffuse optical tomography (DOT) in intern organs like the prostate or facilitate the measurements on extern organs like the breast or the brain. We have recently shown on 2D tomographic images that time-resolved measurements with a large dynamic range obtained with fast-gated single-photon avalanche diodes (SPADs) could push forward the imaged depth range in a diffusive medium at short source-detector separation compared with conventional non-gated approaches. In this work, we confirm these performances with the first 3D tomographic images reconstructed with such a setup and processed with the Mellin- Laplace transform. More precisely, we investigate the performance of hand-held probes with short interfiber distances in terms of spatial resolution and specifically demonstrate the interest of having a compact probe design featuring small source-detector separations. We compare the spatial resolution obtained with two probes having the same design but different scale factors, the first one featuring only interfiber distances of 15 mm and the second one, 10 mm. We evaluate experimentally the spatial resolution obtained with each probe on the setup with fast-gated SPADs for optical phantoms featuring two absorbing inclusions positioned at different depths and conclude on the potential of short source-detector separations for DOT.
Boso, Gianluca; Ke, Damei; Korzh, Boris; Bouilloux, Jordan; Lange, Norbert; Zbinden, Hugo
2015-01-01
In clinical applications, such as PhotoDynamic Therapy, direct singlet-oxygen detection through its luminescence in the near-infrared range (1270 nm) has been a challenging task due to its low emission probability and the lack of suitable single-photon detectors. Here, we propose a practical setup based on a negative-feedback avalanche diode detector that is a viable alternative to the current state-of-the art for different clinical scenarios, especially where geometric collection efficiency is limited (e.g. fiber-based systems, confocal microscopy, scanning systems etc.). The proposed setup is characterized with Rose Bengal as a standard photosensitizer and it is used to measure the singlet-oxygen quantum yield of a new set of photosensitizers for site-selective photodynamic therapy. PMID:26819830
SPAD electronics for high-speed quantum communications
NASA Astrophysics Data System (ADS)
Bienfang, Joshua C.; Restelli, Alessandro; Migdall, Alan
2011-01-01
We discuss high-speed electronics that support the use of single-photon avalanche diodes (SPADs) in gigahertz singlephoton communications systems. For InGaAs/InP SPADs, recent work has demonstrated reduced afterpulsing and count rates approaching 500 MHz can be achieved with gigahertz periodic-gating techniques designed to minimize the total avalanche charge to less than 100 fC. We investigate afterpulsing in this regime and establish a connection to observations using more conventional techniques. For Si SPADs, we report the benefits of improved timing electronics that enhance the temporal resolution of Si SPADs used in a free-space quantum key distribution (QKD) system operating in the GHz regime. We establish that the effects of count-rate fluctuations induced by daytime turbulent scintillation are significantly reduced, benefitting the performance of the QKD system.
Single photon detection with self-quenching multiplication
NASA Technical Reports Server (NTRS)
Zheng, Xinyu (Inventor); Cunningham, Thomas J. (Inventor); Pain, Bedabrata (Inventor)
2011-01-01
A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.
Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors
Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David
2016-01-01
This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm) and high fill factor (>20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved. PMID:27223284
Long-range depth profiling of camouflaged targets using single-photon detection
NASA Astrophysics Data System (ADS)
Tobin, Rachael; Halimi, Abderrahim; McCarthy, Aongus; Ren, Ximing; McEwan, Kenneth J.; McLaughlin, Stephen; Buller, Gerald S.
2018-03-01
We investigate the reconstruction of depth and intensity profiles from data acquired using a custom-designed time-of-flight scanning transceiver based on the time-correlated single-photon counting technique. The system had an operational wavelength of 1550 nm and used a Peltier-cooled InGaAs/InP single-photon avalanche diode detector. Measurements were made of human figures, in plain view and obscured by camouflage netting, from a stand-off distance of 230 m in daylight using only submilliwatt average optical powers. These measurements were analyzed using a pixelwise cross correlation approach and compared to analysis using a bespoke algorithm designed for the restoration of multilayered three-dimensional light detection and ranging images. This algorithm is based on the optimization of a convex cost function composed of a data fidelity term and regularization terms, and the results obtained show that it achieves significant improvements in image quality for multidepth scenarios and for reduced acquisition times.
A study of pile-up in integrated time-correlated single photon counting systems
NASA Astrophysics Data System (ADS)
Arlt, Jochen; Tyndall, David; Rae, Bruce R.; Li, David D.-U.; Richardson, Justin A.; Henderson, Robert K.
2013-10-01
Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.
A study of pile-up in integrated time-correlated single photon counting systems.
Arlt, Jochen; Tyndall, David; Rae, Bruce R; Li, David D-U; Richardson, Justin A; Henderson, Robert K
2013-10-01
Recent demonstration of highly integrated, solid-state, time-correlated single photon counting (TCSPC) systems in CMOS technology is set to provide significant increases in performance over existing bulky, expensive hardware. Arrays of single photon single photon avalanche diode (SPAD) detectors, timing channels, and signal processing can be integrated on a single silicon chip with a degree of parallelism and computational speed that is unattainable by discrete photomultiplier tube and photon counting card solutions. New multi-channel, multi-detector TCSPC sensor architectures with greatly enhanced throughput due to minimal detector transit (dead) time or timing channel dead time are now feasible. In this paper, we study the potential for future integrated, solid-state TCSPC sensors to exceed the photon pile-up limit through analytic formula and simulation. The results are validated using a 10% fill factor SPAD array and an 8-channel, 52 ps resolution time-to-digital conversion architecture with embedded lifetime estimation. It is demonstrated that pile-up insensitive acquisition is attainable at greater than 10 times the pulse repetition rate providing over 60 dB of extended dynamic range to the TCSPC technique. Our results predict future CMOS TCSPC sensors capable of live-cell transient observations in confocal scanning microscopy, improved resolution of near-infrared optical tomography systems, and fluorescence lifetime activated cell sorting.
Polarization entangled photons from quantum dots embedded in nanowires.
Huber, Tobias; Predojević, Ana; Khoshnegar, Milad; Dalacu, Dan; Poole, Philip J; Majedi, Hamed; Weihs, Gregor
2014-12-10
In this Letter, we present entanglement generated from a novel structure: a single InAsP quantum dot embedded in an InP nanowire. These structures can grow in a site-controlled way and exhibit high collection efficiency; we detect 0.5 million biexciton counts per second coupled into a single mode fiber with a standard commercial avalanche photo diode. If we correct for the known setup losses and detector efficiency, we get an extraction efficiency of 15(3) %. For the measured polarization entanglement, we observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6).
Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector
NASA Technical Reports Server (NTRS)
Huntington, Andrew
2013-01-01
The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.
High-resolution distributed temperature sensing with the multiphoton-timing technique
NASA Astrophysics Data System (ADS)
Höbel, M.; Ricka, J.; Wüthrich, M.; Binkert, Th.
1995-06-01
We report on a multiphoton-timing distributed temperature sensor (DTS) based on the concept of distributed anti-Stokes Raman thermometry. The sensor combines the advantage of very high spatial resolution (40 cm) with moderate measurement times. In 5 min it is possible to determine the temperature of as many as 4000 points along an optical fiber with an accuracy Delta T less than 2 deg C. The new feature of the DTS system is the combination of a fast single-photon avalanche diode with specially designed real-time signal-processing electronics. We discuss various parameters that affect the operation of analog and photon-timing DTS systems. Particular emphasis is put on the consequences of the nonideal behavior of sensor components and the corresponding correction procedures.
In-depth study of single photon time resolution for the Philips digital silicon photomultiplier
NASA Astrophysics Data System (ADS)
Liu, Z.; Gundacker, S.; Pizzichemi, M.; Ghezzi, A.; Auffray, E.; Lecoq, P.; Paganoni, M.
2016-06-01
The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.
Development of new photon-counting detectors for single-molecule fluorescence microscopy.
Michalet, X; Colyer, R A; Scalia, G; Ingargiola, A; Lin, R; Millaud, J E; Weiss, S; Siegmund, Oswald H W; Tremsin, Anton S; Vallerga, John V; Cheng, A; Levi, M; Aharoni, D; Arisaka, K; Villa, F; Guerrieri, F; Panzeri, F; Rech, I; Gulinatti, A; Zappa, F; Ghioni, M; Cova, S
2013-02-05
Two optical configurations are commonly used in single-molecule fluorescence microscopy: point-like excitation and detection to study freely diffusing molecules, and wide field illumination and detection to study surface immobilized or slowly diffusing molecules. Both approaches have common features, but also differ in significant aspects. In particular, they use different detectors, which share some requirements but also have major technical differences. Currently, two types of detectors best fulfil the needs of each approach: single-photon-counting avalanche diodes (SPADs) for point-like detection, and electron-multiplying charge-coupled devices (EMCCDs) for wide field detection. However, there is room for improvements in both cases. The first configuration suffers from low throughput owing to the analysis of data from a single location. The second, on the other hand, is limited to relatively low frame rates and loses the benefit of single-photon-counting approaches. During the past few years, new developments in point-like and wide field detectors have started addressing some of these issues. Here, we describe our recent progresses towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. We also discuss our development of large area photon-counting cameras achieving subnanosecond resolution for fluorescence lifetime imaging applications at the single-molecule level.
Development of new photon-counting detectors for single-molecule fluorescence microscopy
Michalet, X.; Colyer, R. A.; Scalia, G.; Ingargiola, A.; Lin, R.; Millaud, J. E.; Weiss, S.; Siegmund, Oswald H. W.; Tremsin, Anton S.; Vallerga, John V.; Cheng, A.; Levi, M.; Aharoni, D.; Arisaka, K.; Villa, F.; Guerrieri, F.; Panzeri, F.; Rech, I.; Gulinatti, A.; Zappa, F.; Ghioni, M.; Cova, S.
2013-01-01
Two optical configurations are commonly used in single-molecule fluorescence microscopy: point-like excitation and detection to study freely diffusing molecules, and wide field illumination and detection to study surface immobilized or slowly diffusing molecules. Both approaches have common features, but also differ in significant aspects. In particular, they use different detectors, which share some requirements but also have major technical differences. Currently, two types of detectors best fulfil the needs of each approach: single-photon-counting avalanche diodes (SPADs) for point-like detection, and electron-multiplying charge-coupled devices (EMCCDs) for wide field detection. However, there is room for improvements in both cases. The first configuration suffers from low throughput owing to the analysis of data from a single location. The second, on the other hand, is limited to relatively low frame rates and loses the benefit of single-photon-counting approaches. During the past few years, new developments in point-like and wide field detectors have started addressing some of these issues. Here, we describe our recent progresses towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. We also discuss our development of large area photon-counting cameras achieving subnanosecond resolution for fluorescence lifetime imaging applications at the single-molecule level. PMID:23267185
Fast x-ray detector system with simultaneous measurement of timing and energy for a single photon
NASA Astrophysics Data System (ADS)
Masuda, T.; Okubo, S.; Hara, H.; Hiraki, T.; Kitao, S.; Miyamoto, Y.; Okai, K.; Ozaki, R.; Sasao, N.; Seto, M.; Uetake, S.; Yamaguchi, A.; Yoda, Y.; Yoshimi, A.; Yoshimura, K.
2017-06-01
We developed a fast X-ray detector system for nuclear resonant scattering (NRS) experiments. Our system employs silicon avalanche photo-diode (Si-APD) as a fast X-ray sensor. The system is able to acquire both timing and energy of a single X-ray photon simultaneously in a high rate condition, 106 counts per second for one Si-APD. The performance of the system was investigated in SPring-8, a synchrotron radiation facility in Japan. Good time resolution of 120 ps (FWHM) was achieved with a slight tail distribution in the time spectrum by a level of 10-9 at 1 ns apart from the peak. Using this system, we successfully observed the NRS from the 26.27-keV level of mercury-201, which has a half-life of 630(50) ps. We also demonstrated the reduction of background events caused by radioactive decays in a radioactive sample by discriminating photon energy.
Fast x-ray detector system with simultaneous measurement of timing and energy for a single photon.
Masuda, T; Okubo, S; Hara, H; Hiraki, T; Kitao, S; Miyamoto, Y; Okai, K; Ozaki, R; Sasao, N; Seto, M; Uetake, S; Yamaguchi, A; Yoda, Y; Yoshimi, A; Yoshimura, K
2017-06-01
We developed a fast X-ray detector system for nuclear resonant scattering (NRS) experiments. Our system employs silicon avalanche photo-diode (Si-APD) as a fast X-ray sensor. The system is able to acquire both timing and energy of a single X-ray photon simultaneously in a high rate condition, 10 6 counts per second for one Si-APD. The performance of the system was investigated in SPring-8, a synchrotron radiation facility in Japan. Good time resolution of 120 ps (FWHM) was achieved with a slight tail distribution in the time spectrum by a level of 10 -9 at 1 ns apart from the peak. Using this system, we successfully observed the NRS from the 26.27-keV level of mercury-201, which has a half-life of 630(50) ps. We also demonstrated the reduction of background events caused by radioactive decays in a radioactive sample by discriminating photon energy.
Why did we elaborate an entangled photons experiment in our engineering school?
NASA Astrophysics Data System (ADS)
Jacubowiez, Lionel; Avignon, Thierry
2005-10-01
We will describe a simple setup experiment that allows students to create polarization-entangled photons pairs. These photon pairs are in an entangled state first described in the famous 1935 article in Phys.Rev by Einstein-Podolsky-Rosen, often called E.P.R. state. Photons pairs at 810 nm are produced in two nonlinear crystals by spontaneous parametric downconversion of photons at 405 nm emitted by a violet laser diode. The polarization state of the photons pairs is easily tunable with a half-wave plate and a Babinet compensator on the laser diode beam. After having adjusted the polarization-entangled state of the photon pairs, our students can perform a test of Bell's inequalities. They will find the amazing value for the Bell parameter between 2.3 and 2.6, depending on the quality of the adjustments of the state of polarization. The experiments described can be done in 4 or 5 hours. What is the importance of creating an entangled photons experiment for our engineering students? First of all, entanglement concept is clearly one of the most strikingly nonclassical features of quantum theory and it is playing an increasing role in present-day physics. But in this paper, we will emphasise the experimental point of view. We will try to explain why we believe that for our students this lab experiment is a unique opportunity to deal with established concepts and experimental techniques on polarization, non linear effects, phase matching, photon counting avalanche photodiodes, counting statistics, coincidences detectors. Let us recall that the first convincing experimental violations of Bell's inequalities were performed by Alain Aspect and Philippe Grangier with pairs of entangled photons at the Institut d'Optique between 1976 and 1982. Twenty five years later, due to recent advances in laser diode technology, new techniques for generation of photon pairs and avalanche photodiodes, this experiment is now part of the experimental lab courses for our students.
Negative Avalanche Feedback Detectors for Photon-Counting Optical Communications
NASA Technical Reports Server (NTRS)
Farr, William H.
2009-01-01
Negative Avalanche Feedback photon counting detectors with near-infrared spectral sensitivity offer an alternative to conventional Geiger mode avalanche photodiode or phototube detectors for free space communications links at 1 and 1.55 microns. These devices demonstrate linear mode photon counting without requiring any external reset circuitry and may even be operated at room temperature. We have now characterized the detection efficiency, dark count rate, after-pulsing, and single photon jitter for three variants of this new detector class, as well as operated these uniquely simple to use devices in actual photon starved free space optical communications links.
Homulle, H A R; Powolny, F; Stegehuis, P L; Dijkstra, J; Li, D-U; Homicsko, K; Rimoldi, D; Muehlethaler, K; Prior, J O; Sinisi, R; Dubikovskaya, E; Charbon, E; Bruschini, C
2016-05-01
In near infrared fluorescence-guided surgical oncology, it is challenging to distinguish healthy from cancerous tissue. One promising research avenue consists in the analysis of the exogenous fluorophores' lifetime, which are however in the (sub-)nanosecond range. We have integrated a single-photon pixel array, based on standard CMOS SPADs (single-photon avalanche diodes), in a compact, time-gated measurement system, named FluoCam. In vivo measurements were carried out with indocyanine green (ICG)-modified derivatives targeting the αvβ 3 integrin, initially on a genetically engineered mouse model of melanoma injected with ICG conjugated with tetrameric cyclic pentapeptide (ICG-E[c(RGD f K)4]), then on mice carrying tumour xenografts of U87-MG (a human primary glioblastoma cell line) injected with monomeric ICG-c(RGD f K). Measurements on tumor, muscle and tail locations allowed us to demonstrate the feasibility of in vivo lifetime measurements with the FluoCam, to determine the characteristic lifetimes (around 500 ps) and subtle lifetime differences between bound and unbound ICG-modified fluorophores (10% level), as well as to estimate the available photon fluxes under realistic conditions.
InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control
NASA Astrophysics Data System (ADS)
Tosi, Alberto; Ruggeri, Alessandro; Bahgat Shehata, Andrea; Della Frera, Adriano; Scarcella, Carmelo; Tisa, Simone; Giudice, Andrea
2013-01-01
We present a photon-counting module based on InGaAs/InP SPAD (Single-Photon Avalanche Diode) for detecting single photons up to 1.7 μm. The module exploits a novel architecture for generating and calibrating the gate width, along with other functions (such as module supervision, counting and processing of detected photons, etc.). The gate width, i.e. the time interval when the SPAD is ON, is user-programmable in the range from 500 ps to 1.5 μs, by means of two different delay generation methods implemented with an FPGA (Field-Programmable Gate Array). In order to compensate chip-to-chip delay variation, an auto-calibration circuit picks out a combination of delays in order to match at best the selected gate width. The InGaAs/InP module accepts asynchronous and aperiodic signals and introduces very low timing jitter. Moreover the photon counting module provides other new features like a microprocessor for system supervision, a touch-screen for local user interface, and an Ethernet link for smart remote control. Thanks to the fullyprogrammable and configurable architecture, the overall instrument provides high system flexibility and can easily match all requirements set by many different applications requiring single photon-level sensitivity in the near infrared with very low photon timing jitter.
A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM.
Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha
2016-09-02
We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing.
A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM
Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha
2016-01-01
We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing. PMID:27598170
Rojalin, Tatu; Kurki, Lauri; Laaksonen, Timo; Viitala, Tapani; Kostamovaara, Juha; Gordon, Keith C; Galvis, Leonardo; Wachsmann-Hogiu, Sebastian; Strachan, Clare J; Yliperttula, Marjo
2016-01-01
In this work, we utilize a short-wavelength, 532-nm picosecond pulsed laser coupled with a time-gated complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector to acquire Raman spectra of several drugs of interest. With this approach, we are able to reveal previously unseen Raman features and suppress the fluorescence background of these drugs. Compared to traditional Raman setups, the present time-resolved technique has two major improvements. First, it is possible to overcome the strong fluorescence background that usually interferes with the much weaker Raman spectra. Second, using the high photon energy excitation light source, we are able to generate a stronger Raman signal compared to traditional instruments. In addition, observations in the time domain can be performed, thus enabling new capabilities in the field of Raman and fluorescence spectroscopy. With this system, we demonstrate for the first time the possibility of recording fluorescence-suppressed Raman spectra of solid, amorphous and crystalline, and non-photoluminescent and photoluminescent drugs such as caffeine, ranitidine hydrochloride, and indomethacin (amorphous and crystalline forms). The raw data acquired by utilizing only the picosecond pulsed laser and a CMOS SPAD detector could be used for identifying the compounds directly without any data processing. Moreover, to validate the accuracy of this time-resolved technique, we present density functional theory (DFT) calculations for a widely used gastric acid inhibitor, ranitidine hydrochloride. The obtained time-resolved Raman peaks were identified based on the calculations and existing literature. Raman spectra using non-time-resolved setups with continuous-wave 785- and 532-nm excitation lasers were used as reference data. Overall, this demonstration of time-resolved Raman and fluorescence measurements with a CMOS SPAD detector shows promise in diverse areas, including fundamental chemical research, the pharmaceutical setting, process analytical technology (PAT), and the life sciences.
Mu, Ying; Valim, Niksa; Niedre, Mark
2013-06-15
We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.
Tracking capabilities of SPADs for laser ranging
NASA Technical Reports Server (NTRS)
Zappa, F.; Ripamonti, Giancarlo; Lacaita, A.; Cova, Sergio; Samori, C.
1993-01-01
The spatial sensitivity of Single-Photon Avalanche Diodes (SPADs) can be exploited in laser ranging measurements to finely tune the laser spot in the center of the detector sensitive area. We report the performance of a SPAD with l00 micron diameter. It features a time resolution better than 80 ps rms when operated 4V above V(b) at minus 30 C, and a spatial sensitivity better than 20 microns to radial displacements of the laser spot. New SPAD structures with auxiliary delay detectors are proposed. These improved devices could allow a two dimensional sensitivity, that could be employed for the design of pointing servos.
Highly sensitive lidar with a thumb-sized sensor-head built using an optical fiber preamplifier
NASA Astrophysics Data System (ADS)
Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Mao, Xueon; Maeda, Mitsutoshi; Nagashima, Chie; Kagami, Manabu
2011-06-01
We developed a LIDAR system with a sensor head as small as 22 cc, in spite of the inclusion of a scanning mechanism. This LIDAR system not only has a small body, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and it incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enabled us to exceed the detection limit of thermal noise. In conventional LIDAR systems the detection limit is determined by thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, received signal is amplified by an optical fiber amplifier in front of the photo diode and the TIA. Therefore, our LIDAR system can boost the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gain of the optical fiber amplifier and TIA in our LIDAR system such that it is capable of detecting a single photon. As a result, the detection limit of our LIDAR system is determined by shot noise. This small and highly sensitive measurement technology shows great potential for use in LIDAR with an optical preamplifier.
Time-Domain Fluorescence Lifetime Imaging Techniques Suitable for Solid-State Imaging Sensor Arrays
Li, David Day-Uei; Ameer-Beg, Simon; Arlt, Jochen; Tyndall, David; Walker, Richard; Matthews, Daniel R.; Visitkul, Viput; Richardson, Justin; Henderson, Robert K.
2012-01-01
We have successfully demonstrated video-rate CMOS single-photon avalanche diode (SPAD)-based cameras for fluorescence lifetime imaging microscopy (FLIM) by applying innovative FLIM algorithms. We also review and compare several time-domain techniques and solid-state FLIM systems, and adapt the proposed algorithms for massive CMOS SPAD-based arrays and hardware implementations. The theoretical error equations are derived and their performances are demonstrated on the data obtained from 0.13 μm CMOS SPAD arrays and the multiple-decay data obtained from scanning PMT systems. In vivo two photon fluorescence lifetime imaging data of FITC-albumin labeled vasculature of a P22 rat carcinosarcoma (BD9 rat window chamber) are used to test how different algorithms perform on bi-decay data. The proposed techniques are capable of producing lifetime images with enough contrast. PMID:22778606
NASA Astrophysics Data System (ADS)
D'Ascenzo, N.; Xie, Q.
2018-04-01
Modern concepts of single photon or charged particle detection systems are based on geiger mode avalanche devices developed in CMOS technology. The key-problem encountered in the fabrication of these devices in CMOS is the dark rate level. The dark rate and single photon signal are not distinguishable. This sets also the limits of the application of geiger mode avalanche devices to single photon or charged particle detection systems. We report the design and fabrication of four possible layouts of these devices using the 0.18 μm BCDLite GLOBALFOUNDRIES process. The devices have an area of 50×50 μm2. They are characterized by a fast response time and an approximately 60 ns recovery time. The best topology exhibits an average dark rate as low as 3×103 kHz/mm2.
Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR
NASA Astrophysics Data System (ADS)
Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph
2010-09-01
We report on the development of focal plane arrays (FPAs) employing two-dimensional arrays of InGaAsP-based Geiger-mode avalanche photodiodes (GmAPDs). These FPAs incorporate InP/InGaAs(P) Geiger-mode avalanche photodiodes (GmAPDs) to create pixels that detect single photons at shortwave infrared wavelengths with high efficiency and low dark count rates. GmAPD arrays are hybridized to CMOS read-out integrated circuits (ROICs) that enable independent laser radar (LADAR) time-of-flight measurements for each pixel, providing three-dimensional image data at frame rates approaching 200 kHz. Microlens arrays are used to maintain high fill factor of greater than 70%. We present full-array performance maps for two different types of sensors optimized for operation at 1.06 μm and 1.55 μm, respectively. For the 1.06 μm FPAs, overall photon detection efficiency of >40% is achieved at <20 kHz dark count rates with modest cooling to ~250 K using integrated thermoelectric coolers. We also describe the first evalution of these FPAs when multi-photon pulses are incident on single pixels. The effective detection efficiency for multi-photon pulses shows excellent agreement with predictions based on Poisson statistics. We also characterize the crosstalk as a function of pulse mean photon number. Relative to the intrinsic crosstalk contribution from hot carrier luminescence that occurs during avalanche current flows resulting from single incident photons, we find a modest rise in crosstalk for multi-photon incident pulses that can be accurately explained by direct optical scattering.
Site-controlled InGaN/GaN single-photon-emitting diode
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang
2016-04-11
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
High-resolution depth profiling using a range-gated CMOS SPAD quanta image sensor.
Ren, Ximing; Connolly, Peter W R; Halimi, Abderrahim; Altmann, Yoann; McLaughlin, Stephen; Gyongy, Istvan; Henderson, Robert K; Buller, Gerald S
2018-03-05
A CMOS single-photon avalanche diode (SPAD) quanta image sensor is used to reconstruct depth and intensity profiles when operating in a range-gated mode used in conjunction with pulsed laser illumination. By designing the CMOS SPAD array to acquire photons within a pre-determined temporal gate, the need for timing circuitry was avoided and it was therefore possible to have an enhanced fill factor (61% in this case) and a frame rate (100,000 frames per second) that is more difficult to achieve in a SPAD array which uses time-correlated single-photon counting. When coupled with appropriate image reconstruction algorithms, millimeter resolution depth profiles were achieved by iterating through a sequence of temporal delay steps in synchronization with laser illumination pulses. For photon data with high signal-to-noise ratios, depth images with millimeter scale depth uncertainty can be estimated using a standard cross-correlation approach. To enhance the estimation of depth and intensity images in the sparse photon regime, we used a bespoke clustering-based image restoration strategy, taking into account the binomial statistics of the photon data and non-local spatial correlations within the scene. For sparse photon data with total exposure times of 75 ms or less, the bespoke algorithm can reconstruct depth images with millimeter scale depth uncertainty at a stand-off distance of approximately 2 meters. We demonstrate a new approach to single-photon depth and intensity profiling using different target scenes, taking full advantage of the high fill-factor, high frame rate and large array format of this range-gated CMOS SPAD array.
Practical photon number detection with electric field-modulated silicon avalanche photodiodes.
Thomas, O; Yuan, Z L; Shields, A J
2012-01-24
Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.
Note: Fully integrated time-to-amplitude converter in Si-Ge technology.
Crotti, M; Rech, I; Ghioni, M
2010-10-01
Over the past years an always growing interest has arisen about the measurement technique of time-correlated single photon counting TCSPC), since it allows the analysis of extremely fast and weak light waveforms with a picoseconds resolution. Consequently, many applications exploiting TCSPC have been developed in several fields such as medicine and chemistry. Moreover, the development of multianode PMT and of single photon avalanche diode arrays led to the realization of acquisition systems with several parallel channels to employ the TCSPC technique in even more applications. Since TCSPC basically consists of the measurement of the arrival time of a photon, the most important part of an acquisition chain is the time measurement block, which must have high resolution and low differential nonlinearity, and in order to realize multidimensional systems, it has to be integrated to reduce both cost and area. In this paper we present a fully integrated time-to-amplitude converter, built in 0.35 μm Si-Ge technology, characterized by a good time resolution (60 ps), low differential nonlinearity (better than 3% peak to peak), high counting rate (16 MHz), low and constant power dissipation (40 mW), and low area occupation (1.38×1.28 mm(2)).
High linearity SPAD and TDC array for TCSPC and 3D ranging applications
NASA Astrophysics Data System (ADS)
Villa, Federica; Lussana, Rudi; Bronzi, Danilo; Dalla Mora, Alberto; Contini, Davide; Tisa, Simone; Tosi, Alberto; Zappa, Franco
2015-01-01
An array of 32x32 Single-Photon Avalanche-Diodes (SPADs) and Time-to-Digital Converters (TDCs) has been fabricated in a 0.35 μm automotive-certified CMOS technology. The overall dimension of the chip is 9x9 mm2. Each pixel is able to detect photons in the 300 nm - 900 nm wavelength range with a fill-factor of 3.14% and either to count them or to time stamp their arrival time. In photon-counting mode an in-pixel 6-bit counter provides photon-numberresolved intensity movies at 100 kfps, whereas in photon-timing mode the 10-bit in-pixel TDC provides time-resolved maps (Time-Correlated Single-Photon Counting measurements) or 3D depth-resolved (through direct time-of-flight technique) images and movies, with 312 ps resolution. The photodetector is a 30 μm diameter SPAD with low Dark Count Rate (120 cps at room temperature, 3% hot-pixels) and 55% peak Photon Detection Efficiency (PDE) at 450 nm. The TDC has a 6-bit counter and a 4-bit fine interpolator, based on a Delay Locked Loop (DLL) line, which makes the TDC insensitive to process, voltage, and temperature drifts. The implemented sliding-scale technique improves linearity, giving 2% LSB DNL and 10% LSB INL. The single-shot precision is 260 ps rms, comprising SPAD, TDC and driving board jitter. Both optical and electrical crosstalk among SPADs and TDCs are negligible. 2D fast movies and 3D reconstructions with centimeter resolution are reported.
Design rules for quantum imaging devices: experimental progress using CMOS single-photon detectors
NASA Astrophysics Data System (ADS)
Charbon, Edoardo; Gunther, Neil J.; Boiko, Dmitri L.; Beretta, Giordano B.
2006-08-01
We continue our previous program1 where we introduced a set of quantum-based design rules directed at quantum engineers who design single-photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high-resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio-fluorescence microscopy and 3D vision systems. They have also been particularly successful for intra-chip optical communications implemented entirely in CMOS technology. More importantly for our purposes, a very low dark count allows SPADs to detect rare photon events with a high dynamic range and high signal-to-noise ratio. Our CMOS SPADs support multi-channel detection of photon arrivals with picosecond accuracy, several million times per second, due to a very short detection cycle. The tiny chip area means they are suitable for highly miniaturized quantum imaging devices and that is how we employ them in this paper. Our quantum path integral analysis of the Young-Afshar-Wheeler interferometer showed that Bohr's complementarity principle was not violated due the previously overlooked effect of photon bifurcation within the lens--a phenomenon consistent with our quantum design rules--which accounts for the loss of which-path information in the presence of interference. In this paper, we report on our progress toward the construction of quantitative design rules as well as some proposed tests for quantum imaging devices using entangled photon sources with our SPAD imager.
3D near-infrared imaging based on a single-photon avalanche diode array sensor
NASA Astrophysics Data System (ADS)
Mata Pavia, Juan; Wolf, Martin; Charbon, Edoardo
2012-10-01
Near-infrared light can be used to determine the optical properties (absorption and scattering) of human tissue. Optical tomography uses this principle to image the internal structure of parts of the body by measuring the light that is scattered in the tissue. An imager for optical tomography was designed based on a detector with 128x128 single photon pixels that included a bank of 32 time-to-digital converters. Due to the high spatial resolution and the possibility of performing time resolved measurements, a new contactless setup has been conceived. The setup has a resolution of 97ps and operates with a laser source with an average power of 3mW. This new setup generated an high amount of data that could not be processed by established methods, therefore new concepts and algorithms were developed to take advantage of it. Simulations show that the potential resolution of the new setup would be much higher than previous designs. Measurements have been performed showing its potential. Images derived from the measurements showed that it is possible to reach a resolution of at least 5mm.
Hybrid photodetector for single-molecule spectroscopy and microscopy
Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon
2011-01-01
We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications. PMID:21822361
Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications
NASA Astrophysics Data System (ADS)
Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.
2007-02-01
Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.
Room temperature single-photon detectors for high bit rate quantum key distribution
DOE Office of Scientific and Technical Information (OSTI.GOV)
Comandar, L. C.; Patel, K. A.; Engineering Department, Cambridge University, 9 J J Thomson Ave., Cambridge CB3 0FA
We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances.
NASA Astrophysics Data System (ADS)
Di Sieno, L.; Contini, D.; Dalla Mora, A.; Torricelli, A.; Spinelli, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.
2013-06-01
In this article, we show experimental results of time-resolved optical spectroscopy performed with small distance between launching and detecting fibers. It was already demonstrated that depth discrimination is independent of source-detector separation and that measurements at small source detector distance provide better contrast and spatial resolution. The main disadvantage is represent by the huge increase in early photons (scarcely diffused by tissue) peak that can saturate the dynamic range of most detectors, hiding information carried by late photons. Thanks to a fast-gated Single- Photon Avalanche Diode (SPAD) module, we are able to reject the peak of early photons and to obtain high-dynamic range acquisitions. We exploit fast-gated SPAD module to perform for the first time functional near-infrared spectroscopy (fNIRS) at small source-detector distance for in vivo measurements and we demonstrate the possibility to detect non-invasively the dynamics of oxygenated and deoxygenated haemoglobin occurring in the motor cortex during a motor task. We also show the improvement in terms of signal amplitude and Signal-to-Noise Ratio (SNR) obtained exploiting fast-gated SPAD performances with respect to "non-gated" measurements.
Near-IR photon number resolving detector design
NASA Astrophysics Data System (ADS)
Bogdanski, Jan; Huntington, Elanor H.
2013-05-01
Photon-Number-Resolving-Detection (PNRD) capability is crucial for many Quantum-Information (QI) applications, e.g. for Coherent-State-Quantum-Computing, Linear-Optics-Quantum-Computing. In Quantum-Key-Distribution and Quantum-Secret-Sharing over 1310/1550 nm fiber, two other important, defense and information security related, QI applications, it's crucial for the information transmission security to guarantee that the information carriers (photons) are single. Thus a PNRD can provide an additional security level against eavesdropping. Currently, there are at least a couple of promising PNRD technologies in the Near-Infrared, but all of them require cryogenic cooling. Thus a compact, portable PNRD, based on commercial Avalanche-Photo-Diodes (APDs), could be a very useful instrument for many QI experiments. For an APD-based PNRD, it is crucial to measure the APD-current in the beginning of the avalanche. Thus an efficient cancellation of the APD capacitive spikes is a necessary condition for the very weak APD current measurement. The detector's principle is based on two commercial, pair-matched InGaAs/InP APDs, connected in series. It leads to a great cancelation of the capacitive spikes caused by the narrow (300 ps), differential gate-pulses of maximum 4V amplitude assuming that both pulses are perfectly matched in regards to their phases, amplitudes, and shapes. The cancellation scheme could be used for other APD-technologies, e.g. Silicon, extending the detection spectrum from visible to NIR. The design distinguishes itself from other, APD-based, schemes by its scalability feature and its computer controlled cancellation of the capacitive spikes. Furthermore, both APDs could be equally used for the detection purpose, which opens a possibility for the odd-even photon number parity detection.
Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability
2017-03-01
Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed- Energy Capability Damian Urciuoli, Miguel Hinojosa, and Ronald Green US...were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed- energy dissipation was kept nearly the same among the...voltages about which design provides the highest pulsed- energy capability. Keywords: Avalanche; Breakdown; Diode; Silicon Carbide Introduction
Long-wavelength photonic integrated circuits and avalanche photodetectors
NASA Astrophysics Data System (ADS)
Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa
2001-10-01
Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve InGaAs/Si APDs with much greater potential than the traditional InGaAs/InP APDs. Preliminary results on their performance will be presented.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Peronio, P.; Acconcia, G.; Rech, I.
Time-Correlated Single Photon Counting (TCSPC) has been long recognized as the most sensitive method for fluorescence lifetime measurements, but often requiring “long” data acquisition times. This drawback is related to the limited counting capability of the TCSPC technique, due to pile-up and counting loss effects. In recent years, multi-module TCSPC systems have been introduced to overcome this issue. Splitting the light into several detectors connected to independent TCSPC modules proportionally increases the counting capability. Of course, multi-module operation also increases the system cost and can cause space and power supply problems. In this paper, we propose an alternative approach basedmore » on a new detector and processing electronics designed to reduce the overall system dead time, thus enabling efficient photon collection at high excitation rate. We present a fast active quenching circuit for single-photon avalanche diodes which features a minimum dead time of 12.4 ns. We also introduce a new Time-to-Amplitude Converter (TAC) able to attain extra-short dead time thanks to the combination of a scalable array of monolithically integrated TACs and a sequential router. The fast TAC (F-TAC) makes it possible to operate the system towards the upper limit of detector count rate capability (∼80 Mcps) with reduced pile-up losses, addressing one of the historic criticisms of TCSPC. Preliminary measurements on the F-TAC are presented and discussed.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gong, S.; Labanca, I.; Rech, I.
2014-10-15
Fluorescence correlation spectroscopy (FCS) is a well-established technique to study binding interactions or the diffusion of fluorescently labeled biomolecules in vitro and in vivo. Fast FCS experiments require parallel data acquisition and analysis which can be achieved by exploiting a multi-channel Single Photon Avalanche Diode (SPAD) array and a corresponding multi-input correlator. This paper reports a 32-channel FPGA based correlator able to perform 32 auto/cross-correlations simultaneously over a lag-time ranging from 10 ns up to 150 ms. The correlator is included in a 32 × 1 SPAD array module, providing a compact and flexible instrument for high throughput FCS experiments.more » However, some inherent features of SPAD arrays, namely afterpulsing and optical crosstalk effects, may introduce distortions in the measurement of auto- and cross-correlation functions. We investigated these limitations to assess their impact on the module and evaluate possible workarounds.« less
NASA Astrophysics Data System (ADS)
Mandal, S.; Kanathila, M. B.; Pynn, C. D.; Li, W.; Gao, J.; Margalith, T.; Laurent, M. A.; Chowdhury, S.
2018-06-01
We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric field of 3 MV cm‑1 with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric field, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of field termination. The superior material quality was critical for such a near-ideal performance. An electric field of 3 MV cm‑1 recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.
NASA Technical Reports Server (NTRS)
Joshi, Ravindra P.; Abedin, M. Nurul (Technical Monitor)
2001-01-01
Field dependent drift velocity results are presented for electron transport in bulk Indium Arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 microns region of interest for atmospheric remote sensing applications. The dark current response was also evaluated. The role of the various components has been analyzed. For shorter devices, the tunneling component is shown to dominate at low temperatures. Finally, possible structures for enhanced photodetection are proposed for future research.
Single-photon emitting diode in silicon carbide.
Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C
2015-07-23
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.
Towards a portable Raman spectrometer using a concave grating and a time-gated CMOS SPAD.
Li, Zhiyun; Deen, M Jamal
2014-07-28
A low-cost, compact Raman spectrometer suitable for the on-line water monitoring applications is explored. A custom-designed concave grating for wavelength selection was fabricated and tested. The detection of the Raman signal is accomplished with a time-gated single photon avalanche diode (TG-SPAD). A fixed gate window of 3.5ns is designed and applied to the TG-SPAD. The temporal resolution of the SPAD was ~60ps when tested with a 7ps, 532nm solid-state laser. To test the efficiency of the gating in fluorescence signal suppression, different detection windows (3ns-0.25ns) within the 3.5ns gate window are used to measure the Raman spectra of Rhodamine B. Strong Raman peaks are resolved with this low-cost system.
Highly sensitive LIDAR with a thumb-sized sensor-head built using an optical fiber preamplifier (3)
NASA Astrophysics Data System (ADS)
Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Kagami, Manabu
2013-05-01
We have developed a LIDAR system with a sensor head which, although it includes a scanning mechanism, is less than 20 cc in size. The system is not only small, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enable us to exceed the detection limit set by thermal noise. In conventional LIDAR systems the detection limit is determined by the thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, the received signal is amplified by an optical fiber amplifier before reaching the photo diode and the TIA. Therefore, our LIDAR system boosts the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gains of the optical fiber amplifier and the TIA in our LIDAR system such that it would be capable of detecting a single photon. As a result, the detection limit of our system is determined by shot noise. We have previously demonstrated scanning up to a range of 80 m with this LIDAR system with a 2 mm diameter of receiving lens. We improved the optical amplifier and the peak output power of LIDAR was over 10KW. We redesigned the sensor-head and improved coupling efficiency. As a result, we succeeded in scanning over a range of 100 m. This small and highly sensitive measurement technology shows great potential for use in LIDAR.
NASA Astrophysics Data System (ADS)
Zhang, Xuping; Shi, Yuanlei; Shan, Yuanyuan; Sun, Zhenhong; Qiao, Weiyan; Zhang, Yixin
2016-09-01
Optical time domain reflectometry (OTDR) is one of the most successful diagnostic tools for nondestructive attenuation measurement of a fiber link. To achieve better sensitivity, spatial resolution, and avoid dead-zone in conversional OTDR, a single-photon detector has been introduced to form the photon-counting OTDR (ν-OTDR). We have proposed a ν-OTDR system using a gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector (SPAD). Benefiting from the superior performance of a sinusoidal gated SPAD on dark count probability, gating frequency, and gate duration, our ν-OTDR system has achieved a dynamic range (DR) of 33.4 dB with 1 μs probe pulse width after an equivalent measurement time of 51 s. This obtainable DR corresponds to a sensing length over 150 km. Our system has also obtained a spatial resolution of 5 cm at the end of a 5-km standard single-mode fiber. By employing a sinusoidal gating technique, we have improved the ν-OTDR spatial resolution and significantly reduced the measurement time.
Single photon detection using Geiger mode CMOS avalanche photodiodes
NASA Astrophysics Data System (ADS)
Lawrence, William G.; Stapels, Christopher; Augustine, Frank L.; Christian, James F.
2005-10-01
Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry. Radiation Monitoring Devices has successfully implemented CMOS manufacturing techniques to develop prototype detectors with active diameters ranging from 5 to 60 microns and measured detection efficiencies of up to 60%. CMOS active quenching circuits are included in the pixel layout. The actively quenched pixels have a quenching time less than 30 ns and a maximum count rate greater than 10 MHz. The actively quenched Geiger mode avalanche photodiode (GPD) has linear response at room temperature over six orders of magnitude. When operating in Geiger mode, these GPDs act as single photon-counting detectors that produce a digital output pulse for each photon with no associated read noise. Thermoelectrically cooled detectors have less than 1 Hz dark counts. The detection efficiency, dark count rate, and after-pulsing of two different pixel designs are measured and demonstrate the differences in the device operation. Additional applications for these devices include nuclear imaging and replacement of photomultiplier tubes in dosimeters.
NASA Astrophysics Data System (ADS)
Cominelli, Alessandro; Acconcia, Giulia; Ghioni, Massimo; Rech, Ivan
2018-03-01
Time-correlated single-photon counting (TCSPC) is a powerful optical technique, which permits recording fast luminous signals with picosecond precision. Unfortunately, given its repetitive nature, TCSPC is recognized as a relatively slow technique, especially when a large time-resolved image has to be recorded. In recent years, there has been a fast trend toward the development of TCPSC imagers. Unfortunately, present systems still suffer from a trade-off between number of channels and performance. Even worse, the overall measurement speed is still limited well below the saturation of the transfer bandwidth toward the external processor. We present a routing algorithm that enables a smart connection between a 32×32 detector array and five shared high-performance converters able to provide an overall conversion rate up to 10 Gbit/s. The proposed solution exploits a fully digital logic circuit distributed in a tree structure to limit the number and length of interconnections, which is a major issue in densely integrated circuits. The behavior of the logic has been validated by means of a field-programmable gate array, while a fully integrated prototype has been designed in 180-nm technology and analyzed by means of postlayout simulations.
3D near-infrared imaging based on a single-photon avalanche diode array sensor
NASA Astrophysics Data System (ADS)
Mata Pavia, Juan; Charbon, Edoardo; Wolf, Martin
2011-07-01
An imager for optical tomography was designed based on a detector with 128×128 single-photon pixels that included a bank of 32 time-to-digital converters. Due to the high spatial resolution and the possibility of performing time resolved measurements, a new contact-less setup has been conceived in which scanning of the object is not necessary. This enables one to perform high-resolution optical tomography with much higher acquisition rate, which is fundamental in clinical applications. The setup has a resolution of 97ps and operates with a laser source with an average power of 3mW. This new imaging system generated a high amount of data that could not be processed by established methods, therefore new concepts and algorithms were developed to take full advantage of it. Images were generated using a new reconstruction algorithm that combined general inverse problem methods with Fourier transforms in order to reduce the complexity of the problem. Simulations show that the potential resolution of the new setup is in the order of millimeters. Experiments have been performed to confirm this potential. Images derived from the measurements demonstrate that we have already reached a resolution of 5mm.
Design and characterization of a dead-time regime enhanced early photon projection imaging system
NASA Astrophysics Data System (ADS)
Sinha, L.; Fogarty, M.; Zhou, W.; Giudice, A.; Brankov, J. G.; Tichauer, K. M.
2018-04-01
Scattering of visible and near-infrared light in biological tissue reduces spatial resolution for imaging of tissues thicker than 100 μm. In this study, an optical projection imaging system is presented and characterized that exploits the dead-time characteristics typical of photon counting modules based on single photon avalanche diodes (SPADs). With this system, it is possible to attenuate the detection of more scattered late-arriving photons, such that detection of less scattered early-arriving photons can be enhanced with increased light intensity, without being impeded by the maximum count rate of the SPADs. The system has the potential to provide transmittance-based anatomical information or fluorescence-based functional information (with slight modification in the instrumentation) of biological samples with improved resolution in the mesoscopic domain (0.1-2 cm). The system design, calibration, stability, and performance were evaluated using simulation and experimental phantom studies. The proposed system allows for the detection of very-rare early-photons at a higher frequency and with a better signal-to-noise ratio. The experimental results demonstrated over a 3.4-fold improvement in the spatial resolution using early photon detection vs. conventional detection, and a 1000-fold improvement in imaging time using enhanced early detection vs. conventional early photon detection in a 4-mm thick phantom with a tissue-equivalent absorption coefficient of μa = 0.05 mm-1 and a reduced scattering coefficient of μs' = 5 mm-1.
Fully integrated free-running InGaAs/InP single-photon detector for accurate lidar applications.
Yu, Chao; Shangguan, Mingjia; Xia, Haiyun; Zhang, Jun; Dou, Xiankang; Pan, Jian-Wei
2017-06-26
We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large temperature range, and an active hold-off circuit implemented in a field programmable gate array is applied to further suppress the afterpulsing contribution. The key parameters of the free-running SPD including photon detection efficiency (PDE), dark count rate (DCR), afterpulse probability, and maximum count rate (MCR) are dedicatedly optimized for lidar application in practice. We then perform a field experiment using a Mie lidar system with 20 kHz pulse repetition frequency to compare the performance between the free-running InGaAs/InP SPD and a commercial superconducting nanowire single-photon detector (SNSPD). Our detector exhibits good performance with 1.6 Mcps MCR (0.6 μs hold-off time), 10% PDE, 950 cps DCR, and 18% afterpulse probability over 50 μs period. Such performance is worse than the SNSPD with 60% PDE and 300 cps DCR. However, after performing a specific algorithm that we have developed for afterpulse and count rate corrections, the lidar system performance in terms of range-corrected signal (Pr 2 ) distribution using our SPD agrees very well with the result using the SNSPD, with only a relative error of ∼2%. Due to the advantages of low-cost and small size of InGaAs/InP NFADs, such detector provides a practical solution for accurate lidar applications.
Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes
NASA Astrophysics Data System (ADS)
Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian
2017-11-01
Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000nm and 1600nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.
Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes.
Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian
2017-11-27
Quantum key distribution (QKD) at telecom wavelengths (1260 - 1625 nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, Indium Gallium Arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their Silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000 nm and 1600 nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.
Design and implementation of Gm-APD array readout integrated circuit for infrared 3D imaging
NASA Astrophysics Data System (ADS)
Zheng, Li-xia; Yang, Jun-hao; Liu, Zhao; Dong, Huai-peng; Wu, Jin; Sun, Wei-feng
2013-09-01
A single-photon detecting array of readout integrated circuit (ROIC) capable of infrared 3D imaging by photon detection and time-of-flight measurement is presented in this paper. The InGaAs avalanche photon diodes (APD) dynamic biased under Geiger operation mode by gate controlled active quenching circuit (AQC) are used here. The time-of-flight is accurately measured by a high accurate time-to-digital converter (TDC) integrated in the ROIC. For 3D imaging, frame rate controlling technique is utilized to the pixel's detection, so that the APD related to each pixel should be controlled by individual AQC to sense and quench the avalanche current, providing a digital CMOS-compatible voltage pulse. After each first sense, the detector is reset to wait for next frame operation. We employ counters of a two-segmental coarse-fine architecture, where the coarse conversion is achieved by a 10-bit pseudo-random linear feedback shift register (LFSR) in each pixel and a 3-bit fine conversion is realized by a ring delay line shared by all pixels. The reference clock driving the LFSR counter can be generated within the ring delay line Oscillator or provided by an external clock source. The circuit is designed and implemented by CSMC 0.5μm standard CMOS technology and the total chip area is around 2mm×2mm for 8×8 format ROIC with 150μm pixel pitch. The simulation results indicate that the relative time resolution of the proposed ROIC can achieve less than 1ns, and the preliminary test results show that the circuit function is correct.
A current-assisted CMOS photonic sampler with two taps for fluorescence lifetime sensing
NASA Astrophysics Data System (ADS)
Ingelberts, H.; Kuijk, M.
2016-04-01
Imaging based on fluorescence lifetime is becoming increasingly important in medical and biological applications. State-of- the-art fluorescence lifetime microscopes either use bulky and expensive gated image intensifiers coupled to a CCD or single-photon detectors in a slow scanning setup. Numerous attempts are being made to create compact, cost-effective all- CMOS imagers for fluorescence lifetime sensing. Single-photon avalanche diode (SPAD) imagers can have very good timing resolution and noise characteristics but have low detection efficiency. Another approach is to use CMOS imagers based on demodulation detectors. These imagers can be either very fast or very efficient but it remains a challenge to combine both characteristics. Recently we developed the current-assisted photonic sampler (CAPS) to tackle these problems and in this work, we present a new CAPS with two detection taps that can sample a fluorescence decay in two time windows. In the case of mono-exponential decays, two windows provide enough information to resolve the lifetime. We built an electro-optical setup to characterize the detector and use it for fluorescence lifetime measurements. It consists of a supercontinuum pulsed laser source, an optical system to focus light into the detector and picosecond timing electronics. We describe the structure and operation of the two-tap CAPS and provide basic characterization of the speed performance at multiple wavelengths in the visible and near-infrared spectrum. We also record fluorescence decays of different visible and NIR fluorescent dyes and provide different methods to resolve the fluorescence lifetime.
Catheter-based time-gated near-infrared fluorescence/OCT imaging system
NASA Astrophysics Data System (ADS)
Lu, Yuankang; Abran, Maxime; Cloutier, Guy; Lesage, Frédéric
2018-02-01
We developed a new dual-modality intravascular imaging system based on fast time-gated fluorescence intensity imaging and spectral domain optical coherence tomography (SD-OCT) for the purpose of interventional detection of atherosclerosis. A pulsed supercontinuum laser was used for fluorescence and OCT imaging. A double-clad fiber (DCF)- based side-firing catheter was designed and fabricated to have a 23 μm spot size at a 2.2 mm working distance for OCT imaging. Its single-mode core is used for OCT, while its inner cladding transports fluorescence excitation light and collects fluorescent photons. The combination of OCT and fluorescence imaging was achieved by using a DCF coupler. For fluorescence detection, we used a time-gated technique with a novel single-photon avalanche diode (SPAD) working in an ultra-fast gating mode. A custom-made delay chip was integrated in the system to adjust the delay between the excitation laser pulse and the SPAD gate-ON window. This technique allowed to detect fluorescent photons of interest while rejecting most of the background photons, thus leading to a significantly improved signal to noise ratio (SNR). Experiments were carried out in turbid media mimicking tissue with an indocyanine green (ICG) inclusion (1 mM and 100 μM) to compare the time-gated technique and the conventional continuous detection technique. The gating technique increased twofold depth sensitivity, and tenfold SNR at large distances. The dual-modality imaging capacity of our system was also validated with a silicone-based tissue-mimicking phantom.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.
p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).
NASA Astrophysics Data System (ADS)
Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei
2017-12-01
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.
NASA Astrophysics Data System (ADS)
Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng
2017-05-01
This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.
A SPAD-based 3D imager with in-pixel TDC for 145ps-accuracy ToF measurement
NASA Astrophysics Data System (ADS)
Vornicu, I.; Carmona-Galán, R.; Rodríguez-Vázquez, Á.
2015-03-01
The design and measurements of a CMOS 64 × 64 Single-Photon Avalanche-Diode (SPAD) array with in-pixel Time-to-Digital Converter (TDC) are presented. This paper thoroughly describes the imager at architectural and circuit level with particular emphasis on the characterization of the SPAD-detector ensemble. It is aimed to 2D imaging and 3D image reconstruction in low light environments. It has been fabricated in a standard 0.18μm CMOS process, i. e. without high voltage or low noise features. In these circumstances, we are facing a high number of dark counts and low photon detection efficiency. Several techniques have been applied to ensure proper functionality, namely: i) time-gated SPAD front-end with fast active-quenching/recharge circuit featuring tunable dead-time, ii) reverse start-stop scheme, iii) programmable time resolution of the TDC based on a novel pseudo-differential voltage controlled ring oscillator with fast start-up, iv) a global calibration scheme against temperature and process variation. Measurements results of individual SPAD-TDC ensemble jitter, array uniformity and time resolution programmability are also provided.
Integrated fiber optical receiver reducing the gap to the quantum limit.
Zimmermann, Horst; Steindl, Bernhard; Hofbauer, Michael; Enne, Reinhard
2017-06-01
Experimental results of a single-photon avalanche diode (SPAD) based optical fiber receiver integrated in 0.35 µm PIN-photodiode CMOS technology are presented. To cope with the parasitic effects of SPADs an array of four receivers is implemented. The SPADs consist of a multiplication zone and a separate thick absorption zone to achieve a high photon detection probability (PDP). In addition cascoded quenchers allow to use a quenching voltage of twice the usual supply voltage, i.e. 6.6 V instead of 3.3 V, in order to increase the PDP further. Measurements result in sensitivities of -55.7 dBm at a data rate of 50 Mbit/s and -51.6 dBm at 100 Mbit/s for a wavelength of 635 nm and a bit-error ratio of 2 × 10 -3 , which is sufficient to perform error correction. These sensitivities are better than those of linear-mode APD receivers integrated in the same CMOS technology. These results are a major advance towards direct detection optical receivers working close to the quantum limit.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cheng, Z; Zheng, X; Deen, J
Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substratemore » by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.« less
NASA Astrophysics Data System (ADS)
Bruschini, Claudio; Charbon, Edoardo; Veerappan, Chockalingam; Braga, Leo H. C.; Massari, Nicola; Perenzoni, Matteo; Gasparini, Leonardo; Stoppa, David; Walker, Richard; Erdogan, Ahmet; Henderson, Robert K.; East, Steve; Grant, Lindsay; Játékos, Balázs; Ujhelyi, Ferenc; Erdei, Gábor; Lörincz, Emöke; André, Luc; Maingault, Laurent; Jacolin, David; Verger, L.; Gros d'Aillon, Eric; Major, Peter; Papp, Zoltan; Nemeth, Gabor
2014-05-01
The SPADnet FP7 European project is aimed at a new generation of fully digital, scalable and networked photonic components to enable large area image sensors, with primary target gamma-ray and coincidence detection in (Time-of- Flight) Positron Emission Tomography (PET). SPADnet relies on standard CMOS technology, therefore allowing for MRI compatibility. SPADnet innovates in several areas of PET systems, from optical coupling to single-photon sensor architectures, from intelligent ring networks to reconstruction algorithms. It is built around a natively digital, intelligent SPAD (Single-Photon Avalanche Diode)-based sensor device which comprises an array of 8×16 pixels, each composed of 4 mini-SiPMs with in situ time-to-digital conversion, a multi-ring network to filter, carry, and process data produced by the sensors at 2Gbps, and a 130nm CMOS process enabling mass-production of photonic modules that are optically interfaced to scintillator crystals. A few tens of sensor devices are tightly abutted on a single PCB to form a so-called sensor tile, thanks to TSV (Through Silicon Via) connections to their backside (replacing conventional wire bonding). The sensor tile is in turn interfaced to an FPGA-based PCB on its back. The resulting photonic module acts as an autonomous sensing and computing unit, individually detecting gamma photons as well as thermal and Compton events. It determines in real time basic information for each scintillation event, such as exact time of arrival, position and energy, and communicates it to its peers in the field of view. Coincidence detection does therefore occur directly in the ring itself, in a differed and distributed manner to ensure scalability. The selected true coincidence events are then collected by a snooper module, from which they are transferred to an external reconstruction computer using Gigabit Ethernet.
Avalanche diode having reduced dark current and method for its manufacture
Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.
2017-08-29
An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito
2015-03-16
We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.
NASA Technical Reports Server (NTRS)
Sun, Xiaoli; Davidson, Frederic M.
1990-01-01
A technique for word timing recovery in a direct-detection optical PPM communication system is described. It tracks on back-to-back pulse pairs in the received random PPM data sequences with the use of a phase locked loop. The experimental system consisted of an 833-nm AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector, and it used Q = 4 PPM signaling at source data rate 25 Mb/s. The mathematical model developed to describe system performance is shown to be in good agreement with the experimental measurements. Use of this recovered PPM word clock with a slot clock recovery system caused no measurable penalty in receiver sensitivity. The completely self-synchronized receiver was capable of acquiring and maintaining both slot and word synchronizations for input optical signal levels as low as 20 average detected photons per information bit. The receiver achieved a bit error probability of 10 to the -6th at less than 60 average detected photons per information bit.
NASA Technical Reports Server (NTRS)
Sun, Xiaoli; Davidson, Frederic; Field, Christopher
1990-01-01
A 50 Mbps direct detection optical communication system for use in an intersatellite link was constructed with an AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector. The system used a Q = 4 PPM format. The receiver consisted of a maximum likelihood PPM detector and a timing recovery subsystem. The PPM slot clock was recovered at the receiver by using a transition detector followed by a PLL. The PPM word clock was recovered by using a second PLL whose input was derived from the presence of back-to-back PPM pulses contained in the received random PPM pulse sequences. The system achieved a bit error rate of 0.000001 at less than 50 detected signal photons/information bit. The receiver was capable of acquiring and maintaining slot and word synchronization for received signal levels greater than 20 photons/information bit, at which the receiver bit error rate was about 0.01.
NASA Astrophysics Data System (ADS)
Cominelli, A.; Acconcia, G.; Peronio, P.; Rech, I.; Ghioni, M.
2017-05-01
In recent years, the Time-Correlated Single Photon Counting (TCSPC) technique has gained a prominent role in many fields, where the analysis of extremely fast and faint luminous signals is required. In the life science, for instance, the estimation of fluorescence time-constants with picosecond accuracy has been leading to a deeper insight into many biological processes. Although the many advantages provided by TCSPC-based techniques, their intrinsically repetitive nature leads to a relatively long acquisition time, especially when time-resolved images are obtained by means of a single detector, along with a scanning point system. In the last decade, TCSPC acquisition systems have been subjected to a fast trend towards the parallelization of many independent channels, in order to speed up the measure. On one hand, some high-performance multi-module systems have been already made commercially available, but high area and power consumption of each module have limited the number of channels to only some units. On the other hand, many compact systems based on Single Photon Avalanche Diodes (SPAD) have been proposed in literature, featuring thousands of independent acquisition chains on a single chip. The integration of both detectors and conversion electronic in the same pixel area, though, has imposed tight constraints on power dissipation and area occupation of the electronics, resulting in a tradeoff with performance, both in terms of differential nonlinearity and timing jitter. Furthermore, in the ideal case of simultaneous readout of a huge number of channels, the overall data rate can be as high as 100 Gbit/s, which is nowadays too high to be easily processed in real time by a PC. Typical adopted solutions involve an arbitrary dwell time, followed by a sequential readout of the converters, thus limiting the maximum operating frequency of each channel and impairing the measurement speed, which still lies well below the limit imposed by the saturation of the transfer rate towards the elaboration unit. We developed a novel readout architecture, starting from a completely different perspective: considering the maximum data rate we can manage with a PC, a limited set of conversion data is selected and transferred to the elaboration unit during each excitation period, in order to take full advantage of the bus bandwidth toward the PC. In particular, we introduce a smart routing logic, able to dynamically connect a large number of SPAD detectors to a limited set of high-performance external acquisition chains, paving the way for a more efficient use of resources and allowing us to effectively break the tradeoff between integration and performance, which affects the solutions proposed so far. The routing electronic features a pixelated architecture, while 3D-stacking techniques are exploited to connect each SPAD to its dedicated electronic, leading to a minimization of the overall number of interconnections crossing the integrated system, which is one of the main issues in high-density arrays.
NASA Technical Reports Server (NTRS)
Spinhirne, James D. (Inventor)
1993-01-01
An eye safe, compact, solid state lidar for profiling atmospheric cloud and aerosol scattering is disclosed. The transmitter of the micro pulse lidar is a diode pumped micro-J pulse energy, high repetition rate Nd:YLF laser. Eye safety is obtained through beam expansion. The receiver employs a photon counting solid state Geiger mode avalanche photodiode detector. Data acquisition is by a single card multichannel scaler. Daytime background induced quantum noise is controlled by a narrow receiver field-of-view and a narrow bandwidth temperature controlled interference filter. Dynamic range of the signal is limited to optical geometric signal compression. Signal simulations and initial atmospheric measurements indicate that micropulse lider systems are capable of detecting and profiling all significant cloud and aerosol scattering through the troposphere and into the stratosphere. The intended applications are scientific studies and environmental monitoring which require full time, unattended measurements of the cloud and aerosol height structure.
NASA Technical Reports Server (NTRS)
Spinhirne, James D.
1993-01-01
An eye safe, compact, solid state lidar for profiling atmospheric cloud and aerosol scattering has been demonstrated. The transmitter of the micropulse lidar is a diode pumped micro-J pulse energy, high repetition rate Nd:YLF laser. Eye safety is obtained through beam expansion. The receiver employs a photon counting solid state Geiger mode avalanche photodiode detector. Data acquisition is by a single card multichannel scaler. Daytime background induced quantum noise is controlled by a narrow receiver field-of-view and a narrow bandwidth temperature controlled interference filter. Dynamic range of the signal is limited by optical geometric signal compression. Signal simulations and initial atmospheric measurements indicate that systems built on the micropulse lidar concept are capable of detecting and profiling all significant cloud and aerosol scattering through the troposphere and into the stratosphere. The intended applications are scientific studies and environmental monitoring which require full time, unattended measurements of the cloud and aerosol height structure.
Architecture and applications of a high resolution gated SPAD image sensor
Burri, Samuel; Maruyama, Yuki; Michalet, Xavier; Regazzoni, Francesco; Bruschini, Claudio; Charbon, Edoardo
2014-01-01
We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers. PMID:25090572
Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise
NASA Technical Reports Server (NTRS)
Zhao, Kai; Lo, YuHwa; Farr, William
2010-01-01
This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.
Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.
2015-01-01
Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932
NASA Astrophysics Data System (ADS)
Antolovic, Ivan Michel; Burri, Samuel; Bruschini, Claudio; Hoebe, Ron; Charbon, Edoardo
2016-02-01
For many scientific applications, electron multiplying charge coupled devices (EMCCDs) have been the sensor of choice because of their high quantum efficiency and built-in electron amplification. Lately, many researchers introduced scientific complementary metal-oxide semiconductor (sCMOS) imagers in their instrumentation, so as to take advantage of faster readout and the absence of excess noise. Alternatively, single-photon avalanche diode (SPAD) imagers can provide even faster frame rates and zero readout noise. SwissSPAD is a 1-bit 512×128 SPAD imager, one of the largest of its kind, featuring a frame duration of 6.4 μs. Additionally, a gating mechanism enables photosensitive windows as short as 5 ns with a skew better than 150 ps across the entire array. The SwissSPAD photon detection efficiency (PDE) uniformity is very high, thanks on one side to a photon-to-digital conversion and on the other to a reduced fraction of "hot pixels" or "screamers", which would pollute the image with noise. A low native fill factor was recovered to a large extent using a microlens array, leading to a maximum PDE increase of 12×. This enabled us to detect single fluorophores, as required by ground state depletion followed by individual molecule return imaging microscopy (GSDIM). We show the first super resolution results obtained with a SPAD imager, with an estimated localization uncertainty of 30 nm and resolution of 100 nm. The high time resolution of 6.4 μs can be utilized to explore the dye's photophysics or for dye optimization. We also present the methodology for the blinking analysis on experimental data.
Multifocal multiphoton microscopy with adaptive optical correction
NASA Astrophysics Data System (ADS)
Coelho, Simao; Poland, Simon; Krstajic, Nikola; Li, David; Monypenny, James; Walker, Richard; Tyndall, David; Ng, Tony; Henderson, Robert; Ameer-Beg, Simon
2013-02-01
Fluorescence lifetime imaging microscopy (FLIM) is a well established approach for measuring dynamic signalling events inside living cells, including detection of protein-protein interactions. The improvement in optical penetration of infrared light compared with linear excitation due to Rayleigh scattering and low absorption have provided imaging depths of up to 1mm in brain tissue but significant image degradation occurs as samples distort (aberrate) the infrared excitation beam. Multiphoton time-correlated single photon counting (TCSPC) FLIM is a method for obtaining functional, high resolution images of biological structures. In order to achieve good statistical accuracy TCSPC typically requires long acquisition times. We report the development of a multifocal multiphoton microscope (MMM), titled MegaFLI. Beam parallelization performed via a 3D Gerchberg-Saxton (GS) algorithm using a Spatial Light Modulator (SLM), increases TCSPC count rate proportional to the number of beamlets produced. A weighted 3D GS algorithm is employed to improve homogeneity. An added benefit is the implementation of flexible and adaptive optical correction. Adaptive optics performed by means of Zernike polynomials are used to correct for system induced aberrations. Here we present results with significant improvement in throughput obtained using a novel complementary metal-oxide-semiconductor (CMOS) 1024 pixel single-photon avalanche diode (SPAD) array, opening the way to truly high-throughput FLIM.
Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging
NASA Astrophysics Data System (ADS)
Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph
2010-08-01
×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).
Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei
2017-12-15
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm×15 mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.
NASA Astrophysics Data System (ADS)
Hu, C. Y.
2016-12-01
The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.
NASA Astrophysics Data System (ADS)
Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Mao, Xueon; Maeda, Mitsutoshi; Nagashima, Chie; Kagami, Manabu
2012-06-01
We have developed a LIDAR system with a sensor head which, although it includes a scanning mechanism, is less than 20 cc in size. The system is not only small, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enable us to exceed the detection limit set by thermal noise. In conventional LIDAR systems the detection limit is determined by the thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, the received signal is amplified by an optical fiber amplifier before reaching the photo diode and the TIA. Therefore, our LIDAR system boosts the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gains of the optical fiber amplifier and the TIA in our LIDAR system such that it would be capable of detecting a single photon. As a result, the detection limit of our system is determined by shot noise. We have previously demonstrated optical pre-amplified LIDAR with a perfect co-axial optical system[1]. For this we used a variable optical attenuator to remove internal reflection from the transmission and receiving lenses. However, the optical attenuator had an insertion loss of 6dB which reduced the sensitivity of the LIDAR. We re-designed the optical system such that it was semi-co-axial and removed the variable optical attenuator. As a result, we succeeded in scanning up to a range of 80 m. This small and highly sensitive measurement technology shows great potential for use in LIDAR.
NASA Astrophysics Data System (ADS)
Haemisch, York; Frach, Thomas; Degenhardt, Carsten; Thon, Andreas
Silicon Photomultipliers (SiPMs) have emerged as promising alternative to fast vacuum photomultiplier tubes (PMT). A fully digital implementation of the Silicon Photomultiplier (dSiPM) has been developed in order to overcome the deficiencies and limitations of the so far only analog SiPMs (aSiPMs). Our sensor is based on arrays of single photon avalanche photodiodes (SPADs) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. In consequence, photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic provides the added benefit of low power consumption and possible integration of data post-processing directly in the sensor. In this overview paper, we discuss the sensor architecture together with its characteristics with a focus on scalability and practicability aspects for applications in medical imaging, high energy- and astrophysics.
The performance of Geiger mode avalanche photo-diodes in free space laser communication links
NASA Astrophysics Data System (ADS)
Farrell, Thomas C.
2018-05-01
Geiger mode avalanche photo-diode (APD) arrays, when used as detectors in laser communication (lasercom) receivers, promise better performance at lower signal levels than APDs operated in the linear mode. In this paper, we describe the basic operation of the Geiger mode APD array as a lasercom detector, concentrating on aspects relevant to the link design engineer (rather than, for example, describing the details of the physics of the basic device operation itself). Equations are developed that describe the effects of defocus and hold-off time on the relation between the number of photons detected by the array and the output of photo-electron counts. We show how to incorporate these equations into a link budget. The resulting predictions are validated by comparison against simulation results. Finally, we compare the performance of linear mode APD based receivers and Geiger mode APD array based receivers. Results show the Geiger mode receivers yield better performance, in terms of probability of bit error, at lower signal levels, except on links where there is an exceptionally large amount of background noise. Under those conditions, not surprisingly, the hold-off time degrades performance.
Comparison of 32 x 128 and 32 x 32 Geiger-mode APD FPAs for single photon 3D LADAR imaging
NASA Astrophysics Data System (ADS)
Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph
2011-05-01
We present results obtained from 3D imaging focal plane arrays (FPAs) employing planar-geometry InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) with high-efficiency single photon sensitivity at 1.06 μm. We report results obtained for new 32 x 128 format FPAs with 50 μm pitch and compare these results to those obtained for 32 x 32 format FPAs with 100 μm pitch. We show excellent pixel-level yield-including 100% pixel operability-for both formats. The dark count rate (DCR) and photon detection efficiency (PDE) performance is found to be similar for both types of arrays, including the fundamental DCR vs. PDE tradeoff. The optical crosstalk due to photon emission induced by pixel-level avalanche detection events is found to be qualitatively similar for both formats, with some crosstalk metrics for the 32 x 128 format found to be moderately elevated relative to the 32 x 32 FPA results. Timing jitter measurements are also reported for the 32 x 128 FPAs.
The solid state detector technology for picosecond laser ranging
NASA Technical Reports Server (NTRS)
Prochazka, Ivan
1993-01-01
We developed an all solid state laser ranging detector technology, which makes the goal of millimeter accuracy achievable. Our design and construction philosophy is to combine the techniques of single photon ranging, ultrashort laser pulses, and fast fixed threshold discrimination while avoiding any analog signal processing within the laser ranging chain. The all solid state laser ranging detector package consists of the START detector and the STOP solid state photon counting module. Both the detectors are working in an optically triggered avalanche switching regime. The optical signal is triggering an avalanche current buildup which results in the generation of a uniform, fast risetime output pulse.
Coupled Electro-Thermal Simulations of Single Event Burnout in Power Diodes
NASA Astrophysics Data System (ADS)
Albadri, A. M.; Schrimpf, R. D.; Walker, D. G.; Mahajan, S. V.
2005-12-01
Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.
Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications
NASA Technical Reports Server (NTRS)
Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry
2015-01-01
An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.
The blocking probability of Geiger-mode avalanche photo-diodes
NASA Technical Reports Server (NTRS)
Moision, Bruce; Srinivasan, Meera; Hamkins, Jon
2005-01-01
When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.
NASA Astrophysics Data System (ADS)
Tokura, Norihito; Yamamoto, Takao; Kato, Hisato; Nakagawa, Akio
We have studied the dynamic avalanche phenomenon in an SOI lateral diode during reverse recovery by using a mixed-mode device simulation. In the study, it has been found that local impact ionization occurs near an anode-side field oxide edge, where a high-density hole current flows and a high electric field appears simultaneously. We propose that a p-type anode extension region (AER) along a trench side wall effectively sweeps out stored carriers beneath an anode p-diffusion layer during reverse recovery, resulting in reduction of the electric field and remarkable suppression of the dynamic avalanche. The AER reduces the total recovery charge and does not cause any increase in the total stored charge under a forward bias operation. This effect is verified experimentally by the fabricated device with AER. Thus, the developed SOI lateral diode is promising as a high-speed and highly rugged free-wheeling diode, which can be integrated into next-generation SOI microinverters.
Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements
NASA Astrophysics Data System (ADS)
Jackson, John C.; Phelan, Don; Morrison, Alan P.; Redfern, R. Michael; Mathewson, Alan
2002-05-01
Geiger mode avalanche photodiodes (APD) can be biased above the breakdown voltage to allow detection of single photons. Because of the increase in quantum efficiency, magnetic field immunity, robustness, longer operating lifetime and reduction in costs, solid-state detectors capable of operating at non-cryogenic temperatures and providing single photon detection capabilities provide attractive alternatives to the photomultiplier tube (PMT). Shallow junction Geiger mode APD detectors provide the ability to manufacture photon detectors and detector arrays with CMOS compatible processing steps and allows the use of novel Silicon-on-Insulator(SoI) technology to provide future integrated sensing solutions. Previous work on Geiger mode APD detectors has focused on increasing the active area of the detector to make it more PMT like, easing the integration of discrete reaction, detection and signal processing into laboratory experimental systems. This discrete model for single photon detection works well for laboratory sized test and measurement equipment, however the move towards microfluidics and systems on a chip requires integrated sensing solutions. As we move towards providing integrated functionality of increasingly nanoscopic sized emissions, small area detectors and detector arrays that can be easily integrated into marketable systems, with sensitive small area single photon counting detectors will be needed. This paper will demonstrate the 2-dimensional and 3-dimensional simulation of optical coupling that occurs in Geiger mode APDs. Fabricated Geiger mode APD detectors optimized for fluorescence decay measurements were characterized and preliminary results show excellent results for their integration into fluorescence decay measurement systems.
Time of flight imaging through scattering environments (Conference Presentation)
NASA Astrophysics Data System (ADS)
Le, Toan H.; Breitbach, Eric C.; Jackson, Jonathan A.; Velten, Andreas
2017-02-01
Light scattering is a primary obstacle to imaging in many environments. On small scales in biomedical microscopy and diffuse tomography scenarios scattering is caused by tissue. On larger scales scattering from dust and fog provide challenges to vision systems for self driving cars and naval remote imaging systems. We are developing scale models for scattering environments and investigation methods for improved imaging particularly using time of flight transient information. With the emergence of Single Photon Avalanche Diode detectors and fast semiconductor lasers, illumination and capture on picosecond timescales are becoming possible in inexpensive, compact, and robust devices. This opens up opportunities for new computational imaging techniques that make use of photon time of flight. Time of flight or range information is used in remote imaging scenarios in gated viewing and in biomedical imaging in time resolved diffuse tomography. In addition spatial filtering is popular in biomedical scenarios with structured illumination and confocal microscopy. We are presenting a combination analytical, computational, and experimental models that allow us develop and test imaging methods across scattering scenarios and scales. This framework will be used for proof of concept experiments to evaluate new computational imaging methods.
Mid-infrared coincidence measurements on twin photons at room temperature
Mancinelli, M.; Trenti, A.; Piccione, S.; Fontana, G.; Dam, J. S.; Tidemand-Lichtenberg, P.; Pedersen, C.; Pavesi, L.
2017-01-01
Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons. In the visible and near infrared wavelength ranges suitable single-photon detectors do exist. However, low detector quantum efficiency or excessive noise has hampered their mid-infrared (MIR) counterpart. Fast and highly efficient single-photon detectors are thus highly sought after for MIR applications. Here we pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 μm. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules. The up-converted pairs are then detected with low-noise silicon avalanche photodiodes without the need for cryogenic cooling. PMID:28504244
A solid-state amorphous selenium avalanche technology for low photon flux imaging applications
Wronski, M. M.; Zhao, W.; Reznik, A.; Tanioka, K.; DeCrescenzo, G.; Rowlands, J. A.
2010-01-01
Purpose: The feasibility of a practical solid-state technology for low photon flux imaging applications was investigated. The technology is based on an amorphous selenium photoreceptor with a voltage-controlled avalanche multiplication gain. If this photoreceptor can provide sufficient internal gain, it will be useful for an extensive range of diagnostic imaging systems. Methods: The avalanche photoreceptor under investigation is referred to as HARP-DRL. This is a novel concept in which a high-gain avalanche rushing photoconductor (HARP) is integrated with a distributed resistance layer (DRL) and sandwiched between two electrodes. The avalanche gain and leakage current characteristics of this photoreceptor were measured. Results: HARP-DRL has been found to sustain very high electric field strengths without electrical breakdown. It has shown avalanche multiplication gains as high as 104 and a very low leakage current (≤20 pA∕mm2). Conclusions: This is the first experimental demonstration of a solid-state amorphous photoreceptor which provides sufficient internal avalanche gain for photon counting and photon starved imaging applications. PMID:20964217
Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes
ERIC Educational Resources Information Center
Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry
2008-01-01
An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…
Bilayer avalanche spin-diode logic
DOE Office of Scientific and Technical Information (OSTI.GOV)
Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien; Fadel, Eric R.
2015-11-15
A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.
High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.
Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo
2016-08-08
Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.
Whitmore, Colin D.; Essaka, David; Dovichi, Norman J.
2009-01-01
An ultrasensitive laser-induced fluorescence detector was used with capillary electrophoresis for the study of 5-carboxy-tetramethylrhodamine. The raw signal from the detector provided roughly three orders of magnitude dynamic range. The signal saturated at high analyte concentrations due to the dead time associated with the single-photon counting avalanche photodiode employed in the detector. The signal can be corrected for the detector dead time, providing an additional order of magnitude dynamic range. To further increase dynamic range, two fiber-optic beam-splitters were cascaded to generate a primary signal and two attenuated signals, each monitored by a single-photon counting avalanche photodiode. The combined signals from the three photodiodes are reasonably linear from the concentration detection limit of 3 pM to 10 μM, the maximum concentration investigated, a range of 3,000,000. Mass detection limits were 150 yoctomoles injected onto the capillary. PMID:19836546
ALART: a novel lidar system for vegetation height retrieval from space
NASA Astrophysics Data System (ADS)
Foglia Manzillo, P.; van Dijk, C. N.; Conticello, S.; Esposito, M.; Lussana, R.; Villa, F.; Tamborini, D.; Zappa, F.; Tosi, A.; Roncat, A.; Pfeiffer, N.; Entner, T.; Lampridis, D.
2015-10-01
We propose a multi-kHz Single-Photon Counting (SPC) space LIDAR, exploiting low energy pulses with high repetition frequency (PRF). The high PRF allows one to overcome the low signal limitations, as many return shots can be collected from nearly the same scattering area. The ALART space instrument exhibits a multi-beam design, providing height retrieval over a wide area and terrain slope measurements. This novel technique, working with low SNRs, allows multiple beam generation with a single laser, limiting mass and power consumption. As the receiver has a certain probability to detect multiple photons from different levels of canopy, a histogram is constructed and used to retrieve the properties of the target tree, by means of a modal decomposition of the reconstructed waveform. A field demonstrator of the ALART space instrument is currently being developed by a European consortium led by cosine | measurement systems and funded by ESA under the TRP program. The demonstrator requirements have been derived to be representative of the target instrument and it will be tested in an equipped tower in woodland areas in the Netherlands. The employed detectors are state-of-the-art CMOS Single-Photon Avalanche Diode (SPAD) matrices with 1024 pixels. Each pixel is independently equipped with an integrated Time-to-Digital Converter (TDC), achieving a timing accuracy that is much lower than the SPAD dead time, resulting in a distance resolution in the centimeter range. The instrument emits nanosecond laser pulses with energy on the order of several μJ, at a PRF of ~ 10 kHz, and projects on ground a three-beams pattern. An extensive field measurement campaign will validate the employed technologies and algorithms for vegetation height retrieval.
NASA Astrophysics Data System (ADS)
Hall, Donald
Under a current award, NASA NNX 13AC13G "EXTENDING THE ASTRONOMICAL APPLICATION OF PHOTON COUNTING HgCdTe LINEAR AVALANCHE PHOTODIODE ARRAYS TO LOW BACKGROUND SPACE OBSERVATIONS" UH has used Selex SAPHIRA 320 x 256 MOVPE L-APD HgCdTe arrays developed for Adaptive Optics (AO) wavefront (WF) sensing to investigate the potential of this technology for low background space astronomy applications. After suppressing readout integrated circuit (ROIC) glow, we have placed upper limits on gain normalized dark current of 0.01 e-/sec at up to 8 volts avalanche bias, corresponding to avalanche gain of 5, and have operated with avalanche gains of up to several hundred at higher bias. We have also demonstrated detection of individual photon events. The proposed investigation would scale the format to 1536 x 1536 at 12um (the largest achievable in a standard reticule without requiring stitching) while incorporating reference pixels required at these low dark current levels. The primary objective is to develop, produce and characterize a 1.5k x 1.5k at 12um pitch MOVPE HgCdTe L-APD array, with nearly 30 times the pixel count of the 320 x 256 SAPHIRA, optimized for low background space astronomy. This will involve: 1) Selex design of a 1.5k x 1.5k at 12um pitch ROIC optimized for low background operation, silicon wafer fabrication at the German XFab foundry in 0.35 um 3V3 process and dicing/test at Selex, 2) provision by GL Scientific of a 3-side close-buttable carrier building from the heritage of the HAWAII xRG family, 3) Selex development and fabrication of 1.5k x 1.5k at 12 um pitch MOVPE HgCdTe L-APD detector arrays optimized for low background applications, 4) hybridization, packaging into a sensor chip assembly (SCA) with initial characterization by Selex and, 5) comprehensive characterization of low background performance, both in the laboratory and at ground based telescopes, by UH. The ultimate goal is to produce and eventually market a large format array, the L-APD equivalent of the Teledyne H1RG and H2RG, able to achieve sub-electron read noise and count 1 - 5 um photons with high quantum efficiency and low dark count rate while preserving their Poisson statistics and noise.
Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials
Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas
2016-01-01
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399
Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.
Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas
2016-06-21
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.
NASA Astrophysics Data System (ADS)
Mirabelli, R.; Battistoni, G.; Giacometti, V.; Patera, V.; Pinci, D.; Sarti, A.; Sciubba, A.; Traini, G.; Marafini, M.
2018-01-01
In Particle Therapy (PT) accelerated charged particles and light ions are used for treating tumors. One of the main limitation to the precision of PT is the emission of secondary particles due to the beam interaction with the patient: secondary emitted neutrons can release a significant dose far from the tumor. Therefore, a precise characterization of their flux, production energy and angle distribution is eagerly needed in order to improve the Treatment Planning Systems (TPS) codes. The principal aim of the MONDO (MOnitor for Neutron Dose in hadrOntherapy) project is the development of a tracking device optimized for the detection of fast and ultra-fast secondary neutrons emitted in PT. The detector consists of a matrix of scintillating square fibres coupled with a CMOS-based readout. Here, we present the characterization of the detector tracker prototype and CMOS-based digital SPAD (Single Photon Avalanche Diode) array sensor tested with protons at the Beam Test Facility (Frascati, Italy) and at the Proton Therapy Centre (Trento, Italy), respectively.
Dragojević, Tanja; Hollmann, Joseph L.; Tamborini, Davide; Portaluppi, Davide; Buttafava, Mauro; Culver, Joseph P.; Villa, Federica; Durduran, Turgut
2017-01-01
Speckle contrast optical spectroscopy (SCOS) measures absolute blood flow in deep tissue, by taking advantage of multi-distance (previously reported in the literature) or multi-exposure (reported here) approach. This method promises to use inexpensive detectors to obtain good signal-to-noise ratio, but it has not yet been implemented in a suitable manner for a mass production. Here we present a new, compact, low power consumption, 32 by 2 single photon avalanche diode (SPAD) array that has no readout noise, low dead time and has high sensitivity in low light conditions, such as in vivo measurements. To demonstrate the capability to measure blood flow in deep tissue, healthy volunteers were measured, showing no significant differences from the diffuse correlation spectroscopy. In the future, this array can be miniaturized to a low-cost, robust, battery operated wireless device paving the way for measuring blood flow in a wide-range of applications from sport injury recovery and training to, on-field concussion detection to wearables. PMID:29359106
Time-resolved optical spectrometer based on a monolithic array of high-precision TDCs and SPADs
NASA Astrophysics Data System (ADS)
Tamborini, Davide; Markovic, Bojan; Di Sieno, Laura; Contini, Davide; Bassi, Andrea; Tisa, Simone; Tosi, Alberto; Zappa, Franco
2013-12-01
We present a compact time-resolved spectrometer suitable for optical spectroscopy from 400 nm to 1 μm wavelengths. The detector consists of a monolithic array of 16 high-precision Time-to-Digital Converters (TDC) and Single-Photon Avalanche Diodes (SPAD). The instrument has 10 ps resolution and reaches 70 ps (FWHM) timing precision over a 160 ns full-scale range with a Differential Non-Linearity (DNL) better than 1.5 % LSB. The core of the spectrometer is the application-specific integrated chip composed of 16 pixels with 250 μm pitch, containing a 20 μm diameter SPAD and an independent TDC each, fabricated in a 0.35 μm CMOS technology. In front of this array a monochromator is used to focus different wavelengths into different pixels. The spectrometer has been used for fluorescence lifetime spectroscopy: 5 nm spectral resolution over an 80 nm bandwidth is achieved. Lifetime spectroscopy of Nile blue is demonstrated.
Bellay, Timothy; Klaus, Andreas; Seshadri, Saurav; Plenz, Dietmar
2015-01-01
Spontaneous fluctuations in neuronal activity emerge at many spatial and temporal scales in cortex. Population measures found these fluctuations to organize as scale-invariant neuronal avalanches, suggesting cortical dynamics to be critical. Macroscopic dynamics, though, depend on physiological states and are ambiguous as to their cellular composition, spatiotemporal origin, and contributions from synaptic input or action potential (AP) output. Here, we study spontaneous firing in pyramidal neurons (PNs) from rat superficial cortical layers in vivo and in vitro using 2-photon imaging. As the animal transitions from the anesthetized to awake state, spontaneous single neuron firing increases in irregularity and assembles into scale-invariant avalanches at the group level. In vitro spike avalanches emerged naturally yet required balanced excitation and inhibition. This demonstrates that neuronal avalanches are linked to the global physiological state of wakefulness and that cortical resting activity organizes as avalanches from firing of local PN groups to global population activity. DOI: http://dx.doi.org/10.7554/eLife.07224.001 PMID:26151674
Israel, Yonatan; Tenne, Ron; Oron, Dan; Silberberg, Yaron
2017-01-01
Despite advances in low-light-level detection, single-photon methods such as photon correlation have rarely been used in the context of imaging. The few demonstrations, for example of subdiffraction-limited imaging utilizing quantum statistics of photons, have remained in the realm of proof-of-principle demonstrations. This is primarily due to a combination of low values of fill factors, quantum efficiencies, frame rates and signal-to-noise characteristic of most available single-photon sensitive imaging detectors. Here we describe an imaging device based on a fibre bundle coupled to single-photon avalanche detectors that combines a large fill factor, a high quantum efficiency, a low noise and scalable architecture. Our device enables localization-based super-resolution microscopy in a non-sparse non-stationary scene, utilizing information on the number of active emitters, as gathered from non-classical photon statistics. PMID:28287167
On the passive probing of fiber optic quantum communication channels
DOE Office of Scientific and Technical Information (OSTI.GOV)
Korol'kov, A. V., E-mail: sergei.kulik@gmail.co; Katamadze, K. G.; Kulik, S. P.
2010-04-15
Avalanche photodetectors based on InGaAs:P are the most sensitive and only detectors operating in the telecommunication wavelength range 1.30-1.55 {mu}m in the fiber optic quantum cryptography systems that can operate in the single photon count mode. In contrast to the widely used silicon photodetectors for wavelengths up to 1 {mu}m operating in a waiting mode, these detectors always operate in a gated mode. The production of an electron-hole pair in the process of the absorption of a photon and the subsequent appearance of an avalanche of carriers can be accompanied by the inverse processes of the recombination and emission ofmore » photons. Such a backward emission can present a potential serious problem for the stability of fiber optic quantum cryptography systems against passive probing. The results of analyzing the detection of backscattered radiation are reported. The probability of such an emission has been estimated.« less
Silicon Based Colloidal Quantum Dot and Nanotube Lasers
2013-03-01
carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal
Pixelated Geiger-Mode Avalanche Photo-Diode Characterization Through Dark Current Measurement
NASA Astrophysics Data System (ADS)
Amaudruz, Pierre-Andre; Bishop, Daryl; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retiere, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D.; Thompson, Christopher J.
2014-06-01
PIXELATED geiger-mode avalanche photodiodes (PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that at room temperature, the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure cannot be used to probe temperature variations. On the other hand, the MPPC current can be used to monitor light source conditions in DC mode without requiring strong temperature stability, as long as the integrated source brightness is comparable to the dark noise rate.
Microwave device investigations
NASA Technical Reports Server (NTRS)
Haddad, G. I.; Lomax, R. J.; Masnari, N. A.; Shabde, S. E.
1971-01-01
Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.
Femtosecond Laser--Pumped Source of Entangled Photons for Quantum Cryptography Applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pan, D.; Donaldson, W.; Sobolewski, R.
2007-07-31
We present an experimental setup for generation of entangled-photon pairs via spontaneous parametric down-conversion, based on the femtosecond-pulsed laser. Our entangled-photon source utilizes a 76-MHz-repetition-rate, 100-fs-pulse-width, mode-locked, ultrafast femtosecond laser, which can produce, on average, more photon pairs than a cw laser of an equal pump power. The resulting entangled pairs are counted by a pair of high-quantum-efficiency, single-photon, silicon avalanche photodiodes. Our apparatus is intended as an efficient source/receiver system for the quantum communications and quantum cryptography applications.
Off-axis spectral beam combining of Bragg reflection waveguide photonic crystal diode lasers
NASA Astrophysics Data System (ADS)
Sun, Fangyuan; Wang, Lijie; Zhao, Yufei; Hou, Guanyu; Shu, Shili; Zhang, Jun; Peng, Hangyu; Tian, Sicong; Tong, Cunzhu; Wang, Lijun
2018-06-01
The spectral beam combining (SBC) of Bragg reflection waveguide photonic crystal (BRW-PC) diode lasers was studied for the first time. An off-axis feedback system was constructed using a stripe mirror and a spatial filter to control beam quality in the external cavity. It was found that the BRW-PC diode lasers with a low divergence and a circular beam provided a simplified and cost-effective SBC. The off-axis feedback broke the beam quality limit of a single element, and an M 2 factor of 3.8 times lower than that of a single emitter in the slow axis was demonstrated.
Multiplexed single-mode wavelength-to-time mapping of multimode light
Chandrasekharan, Harikumar K; Izdebski, Frauke; Gris-Sánchez, Itandehui; Krstajić, Nikola; Walker, Richard; Bridle, Helen L.; Dalgarno, Paul A.; MacPherson, William N.; Henderson, Robert K.; Birks, Tim A.; Thomson, Robert R.
2017-01-01
When an optical pulse propagates along an optical fibre, different wavelengths travel at different group velocities. As a result, wavelength information is converted into arrival-time information, a process known as wavelength-to-time mapping. This phenomenon is most cleanly observed using a single-mode fibre transmission line, where spatial mode dispersion is not present, but the use of such fibres restricts possible applications. Here we demonstrate that photonic lanterns based on tapered single-mode multicore fibres provide an efficient way to couple multimode light to an array of single-photon avalanche detectors, each of which has its own time-to-digital converter for time-correlated single-photon counting. Exploiting this capability, we demonstrate the multiplexed single-mode wavelength-to-time mapping of multimode light using a multicore fibre photonic lantern with 121 single-mode cores, coupled to 121 detectors on a 32 × 32 detector array. This work paves the way to efficient multimode wavelength-to-time mapping systems with the spectral performance of single-mode systems. PMID:28120822
NASA Technical Reports Server (NTRS)
Meyer, William V.; Tscharnuter, Walther W.; Macgregor, Andrew D.; Dautet, Henri; Deschamps, Pierre; Boucher, Francois; Zuh, Jixiang; Tin, Padetha; Rogers, Richard B.; Ansari, Rafat R.
1994-01-01
Recent advancements in laser light scattering hardware are described. These include intelligent single card correlators; active quench/active reset avalanche photodiodes; laser diodes; and fiber optics which were used by or developed for a NASA advanced technology development program. A space shuttle experiment which will employ aspects of these hardware developments is previewed.
Response of CMS avalanche photo-diodes to low energy neutrons
NASA Astrophysics Data System (ADS)
Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.
2012-12-01
The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.
Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging
NASA Technical Reports Server (NTRS)
Lu, Wei; Krainak, Michael A.; Yang, Guangning; Sun, Xiaoli; Merritt, Scott
2016-01-01
We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies ((is) greater than 50%) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.
Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging
NASA Technical Reports Server (NTRS)
Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott
2016-01-01
We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.
Detector with internal gain for short-wave infrared ranging applications
NASA Astrophysics Data System (ADS)
Fathipour, Vala; Mohseni, Hooman
2017-09-01
Muñoz-Matutano, G.; Barrera, D.; Fernández-Pousa, C.R.; Chulia-Jordan, R.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Sales, S.; Martínez-Pastor, J.
2016-01-01
New optical fiber based spectroscopic tools open the possibility to develop more robust and efficient characterization experiments. Spectral filtering and light reflection have been used to produce compact and versatile fiber based optical cavities and sensors. Moreover, these technologies would be also suitable to study N-photon correlations, where high collection efficiency and frequency tunability is desirable. We demonstrated single photon emission of a single quantum dot emitting at 1300 nm, using a Fiber Bragg Grating for wavelength filtering and InGaAs Avalanche Photodiodes operated in Geiger mode for single photon detection. As we do not observe any significant fine structure splitting for the neutral exciton transition within our spectral resolution (46 μeV), metamorphic QD single photon emission studied with our all-fiber Hanbury Brown & Twiss interferometer could lead to a more efficient analysis of entangled photon sources at telecom wavelength. This all-optical fiber scheme opens the door to new first and second order interferometers to study photon indistinguishability, entangled photon and photon cross correlation in the more interesting telecom wavelengths. PMID:27257122
NASA Technical Reports Server (NTRS)
Gosney, W. M.
1977-01-01
Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.
NASA Astrophysics Data System (ADS)
Zhang, Yixin; Zhang, Xuping; Shi, Yuanlei; Ying, Zhoufeng; Wang, Shun
2014-06-01
Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10-6 per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.
Infrared engineering for the advancement of science: A UK perspective
NASA Astrophysics Data System (ADS)
Baker, Ian M.
2017-02-01
Leonardo MW (formerly Selex ES) has been developing infrared sensors and cameras for over 62 years at two main sites at Southampton and Basildon. Funding mainly from UK MOD has seen the technology progress from single element PbSe sensors to advanced, high definition, HgCdTe cameras, widely deployed in many fields today. However, in the last 10 years the major challenges and research funding has come from projects within the scientific sphere, particularly: astronomy and space. Low photon flux, high resolution spectroscopy and fast frame rates are the motivation to drive the sensitivity of infrared detectors to the single photon level. These detectors make use of almost noiseless avalanche gain in HgCdTe to achieve the sensitivity and speed of response. Metal Organic Vapour Phase Epitaxy, MOVPE, grown on low-cost GaAs substrates, provides the capability for crucial bandgap engineering to suppress breakdown currents and allow high avalanche gain even in very low background conditions. This paper describes the progress so far and provides a glimpse of the future.
Charge multiplication effect in thin diamond films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Skukan, N., E-mail: nskukan@irb.hr; Grilj, V.; Sudić, I.
2016-07-25
Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanchemore » multiplication and radiation detectors with extreme radiation hardness.« less
Michalet, X.; Siegmund, O.H.W.; Vallerga, J.V.; Jelinsky, P.; Millaud, J.E.; Weiss, S.
2017-01-01
We have recently developed a wide-field photon-counting detector having high-temporal and high-spatial resolutions and capable of high-throughput (the H33D detector). Its design is based on a 25 mm diameter multi-alkali photocathode producing one photo electron per detected photon, which are then multiplied up to 107 times by a 3-microchannel plate stack. The resulting electron cloud is proximity focused on a cross delay line anode, which allows determining the incident photon position with high accuracy. The imaging and fluorescence lifetime measurement performances of the H33D detector installed on a standard epifluorescence microscope will be presented. We compare them to those of standard single-molecule detectors such as single-photon avalanche photodiode (SPAD) or electron-multiplying camera using model samples (fluorescent beads, quantum dots and live cells). Finally, we discuss the design and applications of future generation of H33D detectors for single-molecule imaging and high-throughput study of biomolecular interactions. PMID:29479130
Quantum key distribution in a multi-user network at gigahertz clock rates
NASA Astrophysics Data System (ADS)
Fernandez, Veronica; Gordon, Karen J.; Collins, Robert J.; Townsend, Paul D.; Cova, Sergio D.; Rech, Ivan; Buller, Gerald S.
2005-07-01
In recent years quantum information research has lead to the discovery of a number of remarkable new paradigms for information processing and communication. These developments include quantum cryptography schemes that offer unconditionally secure information transport guaranteed by quantum-mechanical laws. Such potentially disruptive security technologies could be of high strategic and economic value in the future. Two major issues confronting researchers in this field are the transmission range (typically <100km) and the key exchange rate, which can be as low as a few bits per second at long optical fiber distances. This paper describes further research of an approach to significantly enhance the key exchange rate in an optical fiber system at distances in the range of 1-20km. We will present results on a number of application scenarios, including point-to-point links and multi-user networks. Quantum key distribution systems have been developed, which use standard telecommunications optical fiber, and which are capable of operating at clock rates of up to 2GHz. They implement a polarization-encoded version of the B92 protocol and employ vertical-cavity surface-emitting lasers with emission wavelengths of 850 nm as weak coherent light sources, as well as silicon single-photon avalanche diodes as the single photon detectors. The point-to-point quantum key distribution system exhibited a quantum bit error rate of 1.4%, and an estimated net bit rate greater than 100,000 bits-1 for a 4.2 km transmission range.
Small Imaging Depth LIDAR and DCNN-Based Localization for Automated Guided Vehicle †
Ito, Seigo; Hiratsuka, Shigeyoshi; Ohta, Mitsuhiko; Matsubara, Hiroyuki; Ogawa, Masaru
2018-01-01
We present our third prototype sensor and a localization method for Automated Guided Vehicles (AGVs), for which small imaging LIght Detection and Ranging (LIDAR) and fusion-based localization are fundamentally important. Our small imaging LIDAR, named the Single-Photon Avalanche Diode (SPAD) LIDAR, uses a time-of-flight method and SPAD arrays. A SPAD is a highly sensitive photodetector capable of detecting at the single-photon level, and the SPAD LIDAR has two SPAD arrays on the same chip for detection of laser light and environmental light. Therefore, the SPAD LIDAR simultaneously outputs range image data and monocular image data with the same coordinate system and does not require external calibration among outputs. As AGVs travel both indoors and outdoors with vibration, this calibration-less structure is particularly useful for AGV applications. We also introduce a fusion-based localization method, named SPAD DCNN, which uses the SPAD LIDAR and employs a Deep Convolutional Neural Network (DCNN). SPAD DCNN can fuse the outputs of the SPAD LIDAR: range image data, monocular image data and peak intensity image data. The SPAD DCNN has two outputs: the regression result of the position of the SPAD LIDAR and the classification result of the existence of a target to be approached. Our third prototype sensor and the localization method are evaluated in an indoor environment by assuming various AGV trajectories. The results show that the sensor and localization method improve the localization accuracy. PMID:29320434
Small Imaging Depth LIDAR and DCNN-Based Localization for Automated Guided Vehicle.
Ito, Seigo; Hiratsuka, Shigeyoshi; Ohta, Mitsuhiko; Matsubara, Hiroyuki; Ogawa, Masaru
2018-01-10
We present our third prototype sensor and a localization method for Automated Guided Vehicles (AGVs), for which small imaging LIght Detection and Ranging (LIDAR) and fusion-based localization are fundamentally important. Our small imaging LIDAR, named the Single-Photon Avalanche Diode (SPAD) LIDAR, uses a time-of-flight method and SPAD arrays. A SPAD is a highly sensitive photodetector capable of detecting at the single-photon level, and the SPAD LIDAR has two SPAD arrays on the same chip for detection of laser light and environmental light. Therefore, the SPAD LIDAR simultaneously outputs range image data and monocular image data with the same coordinate system and does not require external calibration among outputs. As AGVs travel both indoors and outdoors with vibration, this calibration-less structure is particularly useful for AGV applications. We also introduce a fusion-based localization method, named SPAD DCNN, which uses the SPAD LIDAR and employs a Deep Convolutional Neural Network (DCNN). SPAD DCNN can fuse the outputs of the SPAD LIDAR: range image data, monocular image data and peak intensity image data. The SPAD DCNN has two outputs: the regression result of the position of the SPAD LIDAR and the classification result of the existence of a target to be approached. Our third prototype sensor and the localization method are evaluated in an indoor environment by assuming various AGV trajectories. The results show that the sensor and localization method improve the localization accuracy.
NASA Astrophysics Data System (ADS)
Corbeil Therrien, Audrey
La tomographie d'emission par positrons (TEP) est un outil precieux en recherche preclinique et pour le diagnostic medical. Cette technique permet d'obtenir une image quantitative de fonctions metaboliques specifiques par la detection de photons d'annihilation. La detection des ces photons se fait a l'aide de deux composantes. D'abord, un scintillateur convertit l'energie du photon 511 keV en photons du spectre visible. Ensuite, un photodetecteur convertit l'energie lumineuse en signal electrique. Recemment, les photodiodes avalanche monophotoniques (PAMP) disposees en matrice suscitent beaucoup d'interet pour la TEP. Ces matrices forment des detecteurs sensibles, robustes, compacts et avec une resolution en temps hors pair. Ces qualites en font un photodetecteur prometteur pour la TEP, mais il faut optimiser les parametres de la matrice et de l'electronique de lecture afin d'atteindre les performances optimales pour la TEP. L'optimisation de la matrice devient rapidement une operation difficile, car les differents parametres interagissent de maniere complexe avec les processus d'avalanche et de generation de bruit. Enfin, l'electronique de lecture pour les matrices de PAMP demeure encore rudimentaire et il serait profitable d'analyser differentes strategies de lecture. Pour repondre a cette question, la solution la plus economique est d'utiliser un simulateur pour converger vers la configuration donnant les meilleures performances. Les travaux de ce memoire presentent le developpement d'un tel simulateur. Celui-ci modelise le comportement d'une matrice de PAMP en se basant sur les equations de physique des semiconducteurs et des modeles probabilistes. Il inclut les trois principales sources de bruit, soit le bruit thermique, les declenchements intempestifs correles et la diaphonie optique. Le simulateur permet aussi de tester et de comparer de nouvelles approches pour l'electronique de lecture plus adaptees a ce type de detecteur. Au final, le simulateur vise a quantifier l'impact des parametres du photodetecteur sur la resolution en energie et la resolution en temps et ainsi optimiser les performances de la matrice de PAMP. Par exemple, l'augmentation du ratio de surface active ameliore les performances, mais seulement jusqu'a un certain point. D'autres phenomenes lies a la surface active, comme le bruit thermique, provoquent une degradation du resultat. Le simulateur nous permet de trouver un compromis entre ces deux extremes. Les simulations avec les parametres initiaux demontrent une efficacite de detection de 16,7 %, une resolution en energie de 14,2 % LMH et une resolution en temps de 0.478 ns LMH. Enfin, le simulateur propose, bien qu'il vise une application en TEP, peut etre adapte pour d'autres applications en modifiant la source de photons et en adaptant les objectifs de performances. Mots-cles : Photodetecteurs, photodiodes avalanche monophotoniques, semiconducteurs, tomographie d'emission par positrons, simulations, modelisation, detection monophotonique, scintillateurs, circuit d'etouffement, SPAD, SiPM, Photodiodes avalanche operees en mode Geiger
48-spot single-molecule FRET setup with periodic acceptor excitation
NASA Astrophysics Data System (ADS)
Ingargiola, Antonino; Segal, Maya; Gulinatti, Angelo; Rech, Ivan; Labanca, Ivan; Maccagnani, Piera; Ghioni, Massimo; Weiss, Shimon; Michalet, Xavier
2018-03-01
Single-molecule Förster resonance energy transfer (smFRET) allows measuring distances between donor and acceptor fluorophores on the 3-10 nm range. Solution-based smFRET allows measurement of binding-unbinding events or conformational changes of dye-labeled biomolecules without ensemble averaging and free from surface perturbations. When employing dual (or multi) laser excitation, smFRET allows resolving the number of fluorescent labels on each molecule, greatly enhancing the ability to study heterogeneous samples. A major drawback to solution-based smFRET is the low throughput, which renders repetitive measurements expensive and hinders the ability to study kinetic phenomena in real-time. Here we demonstrate a high-throughput smFRET system that multiplexes acquisition by using 48 excitation spots and two 48-pixel single-photon avalanche diode array detectors. The system employs two excitation lasers allowing separation of species with one or two active fluorophores. The performance of the system is demonstrated on a set of doubly labeled double-stranded DNA oligonucleotides with different distances between donor and acceptor dyes along the DNA duplex. We show that the acquisition time for accurate subpopulation identification is reduced from several minutes to seconds, opening the way to high-throughput screening applications and real-time kinetics studies of enzymatic reactions such as DNA transcription by bacterial RNA polymerase.
Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei
2015-01-01
Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn “photon-switches” to “OFF” state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished. PMID:25797442
Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei
2015-03-23
Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.
Light in flight photography and applications (Conference Presentation)
NASA Astrophysics Data System (ADS)
Faccio, Daniele
2017-02-01
The first successful attempts (Abramson) at capturing light in flight relied on the holographic interference between the ``object'' beam scattered from a screen and a short reference pulse propagating at an angle, acting as an ultrafast shutter cite{egg}. This interference pattern was recorded on a photographic plate or film and allowed the visualisation of light as it propagated through complex environments with unprecedented temporal and spatial resolution. More recently, advances in ultrafast camera technology and in particular the use of picosecond resolution streak cameras allowed the direct digital recording of a light pulse propagating through a plastic bottle (Rasker at el.). This represented a remarkable step forward as it provided the first ever video recording (in the traditional sense with which one intends a video, i.e. something that can be played back directly on a screen and saved in digital format) of a pulse of light in flight. We will discuss a different technology that is based on an imaging camera with a pixel array in which each individual pixel is a single photon avalanche diode (SPAD). SPADs offer both sensitivity to single photons and picosecond temporal resolution of the photon arrival time (with respect to a trigger event). When adding imaging capability, SPAD arrays can deliver videos of light pulse propagating in free space, without the need for a scattering medium or diffuser as in all previous work (Gariepy et al). This capability can then be harnessed for a variety of applications. We will discuss the details of SPAD camera detection of moving objects (e.g. human beings) that are hidden from view and then conclude with a discussion of future perspectives in the field of bio-imaging.
Superlinear threshold detectors in quantum cryptography
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lydersen, Lars; Maroey, Oystein; Skaar, Johannes
2011-09-15
We introduce the concept of a superlinear threshold detector, a detector that has a higher probability to detect multiple photons if it receives them simultaneously rather than at separate times. Highly superlinear threshold detectors in quantum key distribution systems allow eavesdropping the full secret key without being revealed. Here, we generalize the detector control attack, and analyze how it performs against quantum key distribution systems with moderately superlinear detectors. We quantify the superlinearity in superconducting single-photon detectors based on earlier published data, and gated avalanche photodiode detectors based on our own measurements. The analysis shows that quantum key distribution systemsmore » using detector(s) of either type can be vulnerable to eavesdropping. The avalanche photodiode detector becomes superlinear toward the end of the gate. For systems expecting substantial loss, or for systems not monitoring loss, this would allow eavesdropping using trigger pulses containing less than 120 photons per pulse. Such an attack would be virtually impossible to catch with an optical power meter at the receiver entrance.« less
Ground-based demonstration of the European Laser Timing (ELT) experiment.
Schreiber, Karl Ulrich; Prochazka, Ivan; Lauber, Pierre; Hugentobler, Urs; Schäfer, Wolfgang; Cacciapuoti, Luigi; Nasca, Rosario
2010-03-01
The development of techniques for the comparison of distant clocks and for the distribution of stable and accurate time scales has important applications in metrology and fundamental physics research. Additionally, the rapid progress of frequency standards in the optical domain is presently demanding additional efforts for improving the performances of existing time and frequency transfer links. Present clock comparison systems in the microwave domain are based on GPS and two-way satellite time and frequency transfer (TWSTFT). European Laser Timing (ELT) is an optical link presently under study in the frame of the ESA mission Atomic Clock Ensemble in Space (ACES). The on-board hardware for ELT consists of a corner cube retro-reflector (CCR), a single-photon avalanche diode (SPAD), and an event timer board connected to the ACES time scale. Light pulses fired toward ACES by a laser ranging station will be detected by the SPAD diode and time tagged in the ACES time scale. At the same time, the CCR will re-direct the laser pulse toward the ground station providing precise ranging information. We have carried out a ground-based feasibility study at the Geodetic Observatory Wettzell. By using ordinary satellites with laser reflectors and providing a second independent detection port and laser pulse timing unit with an independent time scale, it is possible to evaluate many aspects of the proposed time transfer link before the ACES launch.
NASA Astrophysics Data System (ADS)
Qiao, Yun; Liang, Kun; Chen, Wen-Fei; Han, De-Jun
2013-10-01
The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier (SiPM) has gradually become an alternative to the photomultiplier tube (PMT) in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency (PDE), good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector (ADD) was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.
Lassiter, S J; Stryjewski, W; Legendre, B L; Erdmann, R; Wahl, M; Wurm, J; Peterson, R; Middendorf, L; Soper, S A
2000-11-01
A compact time-resolved near-IR fluorescence imager was constructed to obtain lifetime and intensity images of DNA sequencing slab gels. The scanner consisted of a microscope body with f/1.2 relay optics onto which was mounted a pulsed diode laser (repetition rate 80 MHz, lasing wavelength 680 nm, average power 5 mW), filtering optics, and a large photoactive area (diameter 500 microns) single-photon avalanche diode that was actively quenched to provide a large dynamic operating range. The time-resolved data were processed using electronics configured in a conventional time-correlated single-photon-counting format with all of the counting hardware situated on a PC card resident on the computer bus. The microscope head produced a timing response of 450 ps (fwhm) in a scanning mode, allowing the measurement of subnano-second lifetimes. The time-resolved microscope head was placed in an automated DNA sequencer and translated across a 21-cm-wide gel plate in approximately 6 s (scan rate 3.5 cm/s) with an accumulation time per pixel of 10 ms. The sampling frequency was 0.17 Hz (duty cycle 0.0017), sufficient to prevent signal aliasing during the electrophoresis separation. Software (written in Visual Basic) allowed acquisition of both the intensity image and lifetime analysis of DNA bands migrating through the gel in real time. Using a dual-labeling (IRD700 and Cy5.5 labeling dyes)/two-lane sequencing strategy, we successfully read 670 bases of a control M13mp18 ssDNA template using lifetime identification. Comparison of the reconstructed sequence with the known sequence of the phage indicated the number of miscalls was only 2, producing an error rate of approximately 0.3% (identification accuracy 99.7%). The lifetimes were calculated using maximum likelihood estimators and allowed on-line determinations with high precision, even when short integration times were used to construct the decay profiles. Comparison of the lifetime base calling to a single-dye/four-lane sequencing strategy indicated similar results in terms of miscalls, but reduced insertion and deletion errors using lifetime identification methods, improving the overall read accuracy.
Implementing a Multiplexed System of Detectors for Higher Photon Counting Rates
2007-01-01
D1 D2 Fig. 3. (a) Setup for testing different arrangements of InGaAs SPAD assemblies; (b) three different InGaAs SPAD assemblies; ( c ) schematic of...presently available, either commercial or prototype, the deadtimes range from ≈50 ns for actively quenched single photon avalanche detectors ( SPADs ...to ≈10 µs for passively quenched SPADs , although even actively quenched SPADs sometimes employ µs deadtimes to avoid excessive afterpulsing rates. In
Fluorescence multiplexing with time-resolved and spectral discrimination using a near-IR detector.
Zhu, Li; Stryjewski, Wieslaw; Lassiter, Suzanne; Soper, Steven A
2003-05-15
We report on the design and performance of a two-color, time-resolved detector for the acquisition of both steady-state and time-resolved fluorescence data acquired in real time during the capillary gel electrophoresis separation of DNA sequencing fragments. The detector consisted of a pair of pulsed laser diodes operating at 680 and 780 nm. The diode heads were coupled directly to single-mode fibers, which were terminated into a single fiber mounted via a FC/PC connector to the detector body. The detector contained a dichroic filter, which directed the dual-laser beams to an objective. The objective focused the laser light into a capillary gel column and also collected the resulting fluorescence emission. The dual-color emission was transmitted through the dichroic and focused onto a multimode fiber (core diameter 50 microm), which carried the luminescence to a pair of single-photon avalanche diodes (SPADs). The emission was sorted spectrally using a second dichroic onto one of two SPADs and isolated using appropriate interference filters (710- or 810-nm channel). The dual-color detector demonstrated a time response of 450 and 510 ps (fwhm) for the 710- and 810-nm channels, respectively. The mass detection limits for two near-IR dye-labeled sequencing primers electrophoresed in a capillary gel column were found to be 7.1 x 10(-21) and 3.2 x 10(-20) mol (SNR = 3) for the 710- and 810-nm detector channels, respectively. In addition, no leakage of luminescence excited at 680 nm was observed in the 810-nm channel or 780-nm excited luminescence into the 710-nm channel. An M13mp18 template was sequenced in a single capillary gel column using a two-color, two-lifetime format. The read length was found to be 650 base pairs for the test template at a calling accuracy of 95.1% using a linear poly(dimethylacrylamide) (POP6) gel column, with the read length determined primarily by the electrophoretic resolution produced by the sieving gel.
NASA Astrophysics Data System (ADS)
Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.
2018-04-01
Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.
Efficient single photon detection by quantum dot resonant tunneling diodes.
Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A
2005-02-18
We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.
Alayed, Mrwan; Deen, M Jamal
2017-09-14
Diffuse optical spectroscopy (DOS) and diffuse optical imaging (DOI) are emerging non-invasive imaging modalities that have wide spread potential applications in many fields, particularly for structural and functional imaging in medicine. In this article, we review time-resolved diffuse optical imaging (TR-DOI) systems using solid-state detectors with a special focus on Single-Photon Avalanche Diodes (SPADs) and Silicon Photomultipliers (SiPMs). These TR-DOI systems can be categorized into two types based on the operation mode of the detector (free-running or time-gated). For the TR-DOI prototypes, the physical concepts, main components, figures-of-merit of detectors, and evaluation parameters are described. The performance of TR-DOI prototypes is evaluated according to the parameters used in common protocols to test DOI systems particularly basic instrumental performance (BIP). In addition, the potential features of SPADs and SiPMs to improve TR-DOI systems and expand their applications in the foreseeable future are discussed. Lastly, research challenges and future developments for TR-DOI are discussed for each component in the prototype separately and also for the entire system.
Time-domain diffuse optics: towards next generation devices
NASA Astrophysics Data System (ADS)
Contini, Davide; Dalla Mora, Alberto; Arridge, Simon; Martelli, Fabrizio; Tosi, Alberto; Boso, Gianluca; Farina, Andrea; Durduran, Turgut; Martinenghi, Edoardo; Torricelli, Alessandro; Pifferi, Antonio
2015-07-01
Diffuse optics is a powerful tool for clinical applications ranging from oncology to neurology, but also for molecular imaging, and quality assessment of food, wood and pharmaceuticals. We show that ideally time-domain diffuse optics can give higher contrast and a higher penetration depth with respect to standard technology. In order to completely exploit the advantages of a time-domain system a distribution of sources and detectors with fast gating capabilities covering all the sample surface is needed. Here, we present the building block to build up such system. This basic component is made of a miniaturised source-detector pair embedded into the probe based on pulsed Vertical-Cavity Surface-Emitting Lasers (VCSEL) as sources and Single-Photon Avalanche Diodes (SPAD) or Silicon Photomultipliers (SiPM) as detectors. The possibility to miniaturized and dramatically increase the number of source detectors pairs open the way to an advancement of diffuse optics in terms of improvement of performances and exploration of new applications. Furthermore, availability of compact devices with reduction in size and cost can boost the application of this technique.
Measurement of luminescence decays: High performance at low cost
NASA Astrophysics Data System (ADS)
Sulkes, Mark; Sulkes, Zoe
2011-11-01
The availability of inexpensive ultra bright LEDs spanning the visible and near-ultraviolet combined with the availability of inexpensive electronics equipment makes it possible to construct a high performance luminescence lifetime apparatus (˜5 ns instrumental response or better) at low cost. A central need for time domain measurement systems is the ability to obtain short (˜1 ns or less) excitation light pulses from the LEDs. It is possible to build the necessary LED driver using a simple avalanche transistor circuit. We describe first a circuit to test for small signal NPN transistors that can avalanche. We then describe a final optimized avalanche mode circuit that we developed on a prototyping board by measuring driven light pulse duration as a function of the circuit on the board and passive component values. We demonstrate that the combination of the LED pulser and a 1P28 photomultiplier tube used in decay waveform acquisition has a time response that allows for detection and lifetime determination of luminescence decays down to ˜5 ns. The time response and data quality afforded with the same components in time-correlated single photon counting are even better. For time-correlated single photon counting an even simpler NAND-gate based LED driver circuit is also applicable. We also demonstrate the possible utility of a simple frequency domain method for luminescence lifetime determinations.
Heralded entanglement of two remote atoms
NASA Astrophysics Data System (ADS)
Krug, Michael; Hofmann, Julian; Ortegel, Norbert; Gerard, Lea; Redeker, Kai; Henkel, Florian; Rosenfeld, Wenjamin; Weber, Markus; Weinfurter, Harald
2012-06-01
Entanglement between atomic quantum memories at remote locations will be a key resource for future applications in quantum communication. One possibility to generate such entanglement over large distances is entanglement swapping starting from two quantum memories each entangled with a photon. The photons can be transported to a Bell-state measurement where after the atomic quantum memories are projected onto an entangled state. We have set up two independently operated single atom experiments separated by 20 m. Via a spontaneous decay process each quantum memory, in our case a single Rb-87 atom, emits a single photon whose polarization is entangled with the atomic spin. The photons one emitted from each atom are collected into single-mode optical fibers guided to a non-polarizing 50-50 beam-splitter and detected by avalanche photodetectors. Bunching of indistinguishable photons allows to perform a Bell-state measurement on the photons. Conditioned on the registration of particular two-photon coincidences the spin states of both atoms are measured. The observed correlations clearly prove the entanglement of the two atoms. This is a first step towards creating a basic node of a quantum network as well as a key prerequisite for a future loophole-free test of Bell's inequality.
High-brightness tapered laser diodes with photonic crystal structures
NASA Astrophysics Data System (ADS)
Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun
2018-02-01
Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.
Single photon counting linear mode avalanche photodiode technologies
NASA Astrophysics Data System (ADS)
Williams, George M.; Huntington, Andrew S.
2011-10-01
The false count rate of a single-photon-sensitive photoreceiver consisting of a high-gain, low-excess-noise linear-mode InGaAs avalanche photodiode (APD) and a high-bandwidth transimpedance amplifier (TIA) is fit to a statistical model. The peak height distribution of the APD's multiplied dark current is approximated by the weighted sum of McIntyre distributions, each characterizing dark current generated at a different location within the APD's junction. The peak height distribution approximated in this way is convolved with a Gaussian distribution representing the input-referred noise of the TIA to generate the statistical distribution of the uncorrelated sum. The cumulative distribution function (CDF) representing count probability as a function of detection threshold is computed, and the CDF model fit to empirical false count data. It is found that only k=0 McIntyre distributions fit the empirically measured CDF at high detection threshold, and that false count rate drops faster than photon count rate as detection threshold is raised. Once fit to empirical false count data, the model predicts the improvement of the false count rate to be expected from reductions in TIA noise and APD dark current. Improvement by at least three orders of magnitude is thought feasible with further manufacturing development and a capacitive-feedback TIA (CTIA).
Aqueye+: a new ultrafast single photon counter for optical high time resolution astrophysics
NASA Astrophysics Data System (ADS)
Zampieri, L.; Naletto, G.; Barbieri, C.; Verroi, E.; Barbieri, M.; Ceribella, G.; D'Alessandro, M.; Farisato, G.; Di Paola, A.; Zoccarato, P.
2015-05-01
Aqueye+ is a new ultrafast optical single photon counter, based on single photon avalanche photodiodes (SPAD) and a 4- fold split-pupil concept. It is a completely revisited version of its predecessor, Aqueye, successfully mounted at the 182 cm Copernicus telescope in Asiago. Here we will present the new technological features implemented on Aqueye+, namely a state of the art timing system, a dedicated and optimized optical train, a high sensitivity and high frame rate field camera and remote control, which will give Aqueye plus much superior performances with respect to its predecessor, unparalleled by any other existing fast photometer. The instrument will host also an optical vorticity module to achieve high performance astronomical coronography and a real time acquisition of atmospheric seeing unit. The present paper describes the instrument and its first performances.
FPGA-based gating and logic for multichannel single photon counting
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pooser, Raphael C; Earl, Dennis Duncan; Evans, Philip G
2012-01-01
We present results characterizing multichannel InGaAs single photon detectors utilizing gated passive quenching circuits (GPQC), self-differencing techniques, and field programmable gate array (FPGA)-based logic for both diode gating and coincidence counting. Utilizing FPGAs for the diode gating frontend and the logic counting backend has the advantage of low cost compared to custom built logic circuits and current off-the-shelf detector technology. Further, FPGA logic counters have been shown to work well in quantum key distribution (QKD) test beds. Our setup combines multiple independent detector channels in a reconfigurable manner via an FPGA backend and post processing in order to perform coincidencemore » measurements between any two or more detector channels simultaneously. Using this method, states from a multi-photon polarization entangled source are detected and characterized via coincidence counting on the FPGA. Photons detection events are also processed by the quantum information toolkit for application testing (QITKAT)« less
A non-contact time-domain scanning brain imaging system: first in-vivo results
NASA Astrophysics Data System (ADS)
Mazurenka, M.; Di Sieno, L.; Boso, G.; Contini, D.; Pifferi, A.; Dalla Mora, A.; Tosi, A.; Wabnitz, H.; Macdonald, R.
2013-06-01
We present results of first in-vivo tests of an optical non-contact scanning imaging system, intended to study oxidative metabolism related processes in biological tissue by means of time-resolved near-infrared spectroscopy. Our method is a novel realization of the short source-detector separation approach and based on a fast-gated single-photon avalanche diode to detect late photons only. The scanning system is built in quasi-confocal configuration and utilizes polarizationsensitive detection. It scans an area of 4×4 cm2, recording images with 32×32 pixels, thus creating a high density of source-detector pairs. To test the system we performed a range of in vivo measurements of hemodynamic changes in several types of biological tissues, i.e. skin (Valsalva maneuver), muscle (venous and arterial occlusions) and brain (motor and cognitive tasks). Task-related changes in hemoglobin concentrations were clearly detected in skin and muscle. The brain activation shows weaker, but yet detectable changes. These changes were localized in pixels near the motor cortex area (C3). However, it was found that even very short hair substantially impairs the measurement. Thus the applicability of the scanner is limited to hairless parts of body. The results of our first in-vivo tests prove the feasibility of non-contact scanning imaging as a first step towards development of a prototype for biological tissue imaging for various medical applications.
An Avalanche Diode Electron Detector for Observing NEET
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kishimoto, Shunji
2004-05-12
Nuclear excitation by electron transition (NEET) occurs in atomic inner-shell ionization if the nuclear excitation and the electron transition have nearly the same energy and a common multipolarity. We successfully observed the NEET on 197Au and on 193Ir using a silicon avalanche diode electron detector. The detector was used to find internal conversion electrons emitted from excited nuclei in time spectroscopy with a time gate method. Some nuclear resonant levels, including 8.410 keV on 169Tm and 80.577 keV on 166Er, were also observed with the detector.
Influence of the anisotropy on the performance of D-band SiC IMPATT diodes
NASA Astrophysics Data System (ADS)
Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue
2015-03-01
Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.
Multiple-Event, Single-Photon Counting Imaging Sensor
NASA Technical Reports Server (NTRS)
Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.
2011-01-01
The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.
Progress in low light-level InAs detectors- towards Geiger-mode detection
NASA Astrophysics Data System (ADS)
Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey
2017-05-01
InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Inoue, Keisuke; Kishimoto, Shunji, E-mail: syunji.kishimoto@kek.jp; Inst. of Materials Structure Science, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801
2016-07-27
We developed a scintillation X-ray detector using a proportional-mode silicon avalanche photodiode (Si-APD). We report a prototype detector using a lead-loaded plastic scintillator mounted on a proportional-mode Si-APD (active area size: 3 mm in diameter), which is operated at a low temperature. Using 67.41 keV X-rays, we could measure pulse-height spectra of scintillation light with a charge-sensitive preamplifier at 20, 0, and −35°C. Time spectra of the X-ray bunch structure were successfully recorded using a wideband and 60-dB-gain amplifier in hybrid-mode operation of the Photon Factory ring. We obtained a better time resolution of 0.51 ns (full width at half-maximum)more » for the single-bunch X-ray peak at −35°C. We were also able to observe a linear response of the scintillation pulses up to 8 Mcps for input photon rates up to 1.4 × 10{sup 8} photons/s.« less
Neumann, M; Herten, D P; Dietrich, A; Wolfrum, J; Sauer, M
2000-02-25
The first capillary array scanner for time-resolved fluorescence detection in parallel capillary electrophoresis based on semiconductor technology is described. The system consists essentially of a confocal fluorescence microscope and a x,y-microscope scanning stage. Fluorescence of the labelled probe molecules was excited using a short-pulse diode laser emitting at 640 nm with a repetition rate of 50 MHz. Using a single filter system the fluorescence decays of different labels were detected by an avalanche photodiode in combination with a PC plug-in card for time-correlated single-photon counting (TCSPC). The time-resolved fluorescence signals were analyzed and identified by a maximum likelihood estimator (MLE). The x,y-microscope scanning stage allows for discontinuous, bidirectional scanning of up to 16 capillaries in an array, resulting in longer fluorescence collection times per capillary compared to scanners working in a continuous mode. Synchronization of the alignment and measurement process were developed to allow for data acquisition without overhead. Detection limits in the subzeptomol range for different dye molecules separated in parallel capillaries have been achieved. In addition, we report on parallel time-resolved detection and separation of more than 400 bases of single base extension DNA fragments in capillary array electrophoresis. Using only semiconductor technology the presented technique represents a low-cost alternative for high throughput DNA sequencing in parallel capillaries.
Isolated nanoinjection photo detectors for high-speed and high-sensitivity single-photon detection
NASA Astrophysics Data System (ADS)
Fathipour, V.; Memis, O. G.; Jang, S. J.; Khalid, F.; Brown, R. L.; Hassaninia, I.; Gelfand, R.; Mohseni, H.
2013-09-01
Our group has designed and developed a new SWIR single photon detector called the nano-injection detector that is conceptually designed with biological inspirations taken from the rod cells in human eye. The detector couples a nanoscale sensory region with a large absorption volume to provide avalanche free internal amplification while operating at linear regime with low bias voltages. The low voltage operation makes the detector to be fully compatible with available CMOS technologies. Because there is no photon reemission, detectors can be formed into high-density single-photon detector arrays. As such, the nano injection detectors are viable candidates for SPD and imaging at the short-wave infrared band. Our measurements in 2007 proved a high SNR and a stable excess noise factor of near unity. We are reporting on a high speed version of the detector with 4 orders of magnitude enhancement in speed as well as 2 orders of magnitude reduction in dark current (30nA vs. 10 uA at 1.5V).
Tsujino, Kenji; Akiba, Makoto; Sasaki, Masahide
2007-03-01
The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.
Lumped transmission line avalanche pulser
Booth, R.
1995-07-18
A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse. 8 figs.
Lumped transmission line avalanche pulser
Booth, Rex
1995-01-01
A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.
Low dose digital X-ray imaging with avalanche amorphous selenium
NASA Astrophysics Data System (ADS)
Scheuermann, James R.; Goldan, Amir H.; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei
2015-03-01
Active Matrix Flat Panel Imagers (AMFPI) based on an array of thin film transistors (TFT) have become the dominant technology for digital x-ray imaging. In low dose applications, the performance of both direct and indirect conversion detectors are limited by the electronic noise associated with the TFT array. New concepts of direct and indirect detectors have been proposed using avalanche amorphous selenium (a-Se), referred to as high gain avalanche rushing photoconductor (HARP). The indirect detector utilizes a planar layer of HARP to detect light from an x-ray scintillator and amplify the photogenerated charge. The direct detector utilizes separate interaction (non-avalanche) and amplification (avalanche) regions within the a-Se to achieve depth-independent signal gain. Both detectors require the development of large area, solid state HARP. We have previously reported the first avalanche gain in a-Se with deposition techniques scalable to large area detectors. The goal of the present work is to demonstrate the feasibility of large area HARP fabrication in an a-Se deposition facility established for commercial large area AMFPI. We also examine the effect of alternative pixel electrode materials on avalanche gain. The results show that avalanche gain > 50 is achievable in the HARP layers developed in large area coaters, which is sufficient to achieve x-ray quantum noise limited performance down to a single x-ray photon per pixel. Both chromium (Cr) and indium tin oxide (ITO) have been successfully tested as pixel electrodes.
SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection
NASA Technical Reports Server (NTRS)
Yan, Feng
2006-01-01
A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.
Widefield High Frame Rate Single-Photon SPAD Imagers for SPIM-FCS.
Buchholz, Jan; Krieger, Jan; Bruschini, Claudio; Burri, Samuel; Ardelean, Andrei; Charbon, Edoardo; Langowski, Jörg
2018-05-22
Photon-counting sensors based on standard complementary metal-oxide-semiconductor single-photon avalanche diodes (SPADs) represent an emerging class of imagers that enable the counting and/or timing of single photons at zero readout noise (better than high-speed electron-multiplying charge-coupling devices) and over large arrays. They have seen substantial progress over the last 15 years, increasing their spatial resolution, timing accuracy, and sensitivity while reducing spurious signals such as afterpulsing and dark counts. They are increasingly being applied for time-resolved applications with the added advantage of enabling real-time options such as autocorrelation. We report in this study on the use of such a state-of-the-art 512 × 128 SPAD array, capable of a time resolution of 10 -5 -10 -6 s for full frames while retaining acceptable photosensitivity thanks to the use of dedicated microlenses, in a selective plane illumination-fluorescence correlation spectroscopy setup. The latter allows us to perform thousands of fluorescence-correlation spectroscopy measurements simultaneously in a two-dimensional slice of the sample. This high-speed SPAD imager enables the measurement of molecular motion of small fluorescent particles such as single chemical dye molecules. Inhomogeneities in the molecular detection efficiency were compensated for by means of a global fit of the auto- and cross-correlation curves, which also made a calibration-free measurement of various samples possible. The afterpulsing effect could also be mitigated, making the measurement of the diffusion of Alexa-488 possible, and the overall result quality was further improved by spatial binning. The particle concentrations in the focus tend to be overestimated by a factor of 1.7 compared to a confocal setup; a calibration is thus required if absolute concentrations need to be measured. The first high-speed selective plane illumination-fluorescence correlation spectroscopy in vivo measurements to our knowledge were also recorded: although two-component fit models could not be employed because of noise, the diffusion of eGFP oligomers in HeLa cells could be measured. Sensitivity and noise will be further improved in the next generation of SPAD-based widefield sensors, which are currently under testing. Copyright © 2018 Biophysical Society. Published by Elsevier Inc. All rights reserved.
Dynamics of Single-Photon Emission from Electrically Pumped Color Centers
NASA Astrophysics Data System (ADS)
Khramtsov, Igor A.; Agio, Mario; Fedyanin, Dmitry Yu.
2017-08-01
Low-power, high-speed, and bright electrically driven true single-photon sources, which are able to operate at room temperature, are vital for the practical realization of quantum-communication networks and optical quantum computations. Color centers in semiconductors are currently the best candidates; however, in spite of their intensive study in the past decade, the behavior of color centers in electrically controlled systems is poorly understood. Here we present a physical model and establish a theoretical approach to address single-photon emission dynamics of electrically pumped color centers, which interprets experimental results. We support our analysis with self-consistent numerical simulations of a single-photon emitting diode based on a single nitrogen-vacancy center in diamond and predict the second-order autocorrelation function and other emission characteristics. Our theoretical findings demonstrate remarkable agreement with the experimental results and pave the way to the understanding of single-electron and single-photon processes in semiconductors.
NASA Astrophysics Data System (ADS)
Ripamonti, Giancarlo; Lacaita, Andrea L.
1993-03-01
The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.
Multi-Kilovolt Solid-State Picosecond Switch Studies
2013-06-01
waveforms for the SiC device. Figure 7 shows the nanosecond driving pulse and the delayed avalanche breakdown of the SiC device. The driving...of the sharpened pulse RS VS VOLTAGE SOURCE TEST DEVICE VOLTAGE MONITOR R1 R2 TO SCOPE Figure 6. Simplified SiC avalanche diode test setup 0 2 4...Measured waveforms showing nanosecond driving pulse and subnanosecond delayed avalanche dreakdown of SiC device 50 µm 75 µm 10 µm p+ n+n Anode Cathode
NASA Astrophysics Data System (ADS)
Schroeder, Edward; Mauskopf, Philip; Pilyavsky, Genady; Sinclair, Adrian; Smith, Nathan; Bryan, Sean; Mani, Hamdi; Morozov, Dmitry; Berggren, Karl; Zhu, Di; Smirnov, Konstantin; Vakhtomin, Yuriy
2016-08-01
We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes.
High-speed particle tracking in microscopy using SPAD image sensors
NASA Astrophysics Data System (ADS)
Gyongy, Istvan; Davies, Amy; Miguelez Crespo, Allende; Green, Andrew; Dutton, Neale A. W.; Duncan, Rory R.; Rickman, Colin; Henderson, Robert K.; Dalgarno, Paul A.
2018-02-01
Single photon avalanche diodes (SPADs) are used in a wide range of applications, from fluorescence lifetime imaging microscopy (FLIM) to time-of-flight (ToF) 3D imaging. SPAD arrays are becoming increasingly established, combining the unique properties of SPADs with widefield camera configurations. Traditionally, the photosensitive area (fill factor) of SPAD arrays has been limited by the in-pixel digital electronics. However, recent designs have demonstrated that by replacing the complex digital pixel logic with simple binary pixels and external frame summation, the fill factor can be increased considerably. A significant advantage of such binary SPAD arrays is the high frame rates offered by the sensors (>100kFPS), which opens up new possibilities for capturing ultra-fast temporal dynamics in, for example, life science cellular imaging. In this work we consider the use of novel binary SPAD arrays in high-speed particle tracking in microscopy. We demonstrate the tracking of fluorescent microspheres undergoing Brownian motion, and in intra-cellular vesicle dynamics, at high frame rates. We thereby show how binary SPAD arrays can offer an important advance in live cell imaging in such fields as intercellular communication, cell trafficking and cell signaling.
Alayed, Mrwan
2017-01-01
Diffuse optical spectroscopy (DOS) and diffuse optical imaging (DOI) are emerging non-invasive imaging modalities that have wide spread potential applications in many fields, particularly for structural and functional imaging in medicine. In this article, we review time-resolved diffuse optical imaging (TR-DOI) systems using solid-state detectors with a special focus on Single-Photon Avalanche Diodes (SPADs) and Silicon Photomultipliers (SiPMs). These TR-DOI systems can be categorized into two types based on the operation mode of the detector (free-running or time-gated). For the TR-DOI prototypes, the physical concepts, main components, figures-of-merit of detectors, and evaluation parameters are described. The performance of TR-DOI prototypes is evaluated according to the parameters used in common protocols to test DOI systems particularly basic instrumental performance (BIP). In addition, the potential features of SPADs and SiPMs to improve TR-DOI systems and expand their applications in the foreseeable future are discussed. Lastly, research challenges and future developments for TR-DOI are discussed for each component in the prototype separately and also for the entire system. PMID:28906462
Colussi, V C; Beddar, A S; Kinsella, T J; Sibata, C H
2001-01-01
The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD-p--both p-type) for low-, intermediate-, and high-energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p-type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p-type) diode detectors with respect to certain radiation field parameters such as source-to-surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector-beam orientation). We have characterized the response of the high-energy ISORAD (p-type) diode in the low- (1-4 MV), intermediate- (6-12 MV), and high-energy (15-25 MV) range. Our results showed that the total variation of the response of high-energy ISORAD (p-type) diodes to all the above parameters are within +/-5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high-energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the "red" diode; manufacturer designation of the ISORAD (p-type) high-energy (15-25 MV) range diode, for all energies in our institution and satellites.
Beddar, A. Sam; Kinsella, Timothy J.; Sibata, Claudio H.
2001-01-01
The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD‐p–both p‐type) for low‐, intermediate‐, and high‐energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p‐type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p‐type) diode detectors with respect to certain radiation field parameters such as source‐to‐surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector‐beam orientation). We have characterized the response of the high‐energy ISORAD (p‐type) diode in the low‐ (1–4 MV), intermediate‐ (6–12 MV), and high‐energy (15–25 MV) range. Our results showed that the total variation of the response of high‐energy ISORAD (p‐type) diodes to all the above parameters are within ±5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high‐energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the “red” diode; manufacturer designation of the ISORAD (p‐type) high‐energy (15–25 MV) range diode, for all energies in our institution and satellites. PACS number(s): 87.66.–a, 87.53.–j PMID:11686742
Optical communication with semiconductor laser diodes
NASA Technical Reports Server (NTRS)
Davidson, F.
1988-01-01
Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.
NASA Technical Reports Server (NTRS)
Sun, Xiaoli; Davidson, Frederic M.
1990-01-01
A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the preamplifier high frequency response.
NASA Astrophysics Data System (ADS)
Lee, Min Soo; Park, Byung Kwon; Woo, Min Ki; Park, Chang Hoon; Kim, Yong-Su; Han, Sang-Wook; Moon, Sung
2016-12-01
We developed a countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme in quantum key distribution (QKD) systems. Background-noise cancellation includes self-differencing and balanced avalanche photon diode (APD) schemes and is considered a promising solution for low-noise APDs, which are critical components in high-performance QKD systems. However, its vulnerability to blinding attacks has been recently reported. In this work, we propose a countermeasure that prevents this potential security loophole from being used in detector blinding attacks. An experimental QKD setup is implemented and various tests are conducted to verify the feasibility and performance of the proposed method. The obtained measurement results show that the proposed scheme successfully detects occurring blinding-attack-based hacking attempts.
Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection
NASA Technical Reports Server (NTRS)
Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin
2010-01-01
The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).
NASA Technical Reports Server (NTRS)
Vasile, Stefan; Shera, Suzanne; Shamo, Denis
1998-01-01
New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.
Photon Counting System for High-Sensitivity Detection of Bioluminescence at Optical Fiber End.
Iinuma, Masataka; Kadoya, Yutaka; Kuroda, Akio
2016-01-01
The technique of photon counting is widely used for various fields and also applicable to a high-sensitivity detection of luminescence. Thanks to recent development of single photon detectors with avalanche photodiodes (APDs), the photon counting system with an optical fiber has become powerful for a detection of bioluminescence at an optical fiber end, because it allows us to fully use the merits of compactness, simple operation, highly quantum efficiency of the APD detectors. This optical fiber-based system also has a possibility of improving the sensitivity to a local detection of Adenosine triphosphate (ATP) by high-sensitivity detection of the bioluminescence. In this chapter, we are introducing a basic concept of the optical fiber-based system and explaining how to construct and use this system.
Free-running InGaAs single photon detector with 1 dark count per second at 10% efficiency
NASA Astrophysics Data System (ADS)
Korzh, B.; Walenta, N.; Lunghi, T.; Gisin, N.; Zbinden, H.
2014-02-01
We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse probability of 2.2% for 20 μs of deadtime. This was achieved by using an active hold-off circuit and cooling the NFAD with a free-piston stirling cooler down to temperatures of -110 °C. We integrated two detectors into a practical, 625 MHz clocked quantum key distribution system. Stable, real-time key distribution in the presence of 30 dB channel loss was possible, yielding a secret key rate of 350 bps.
Solid-state Image Sensor with Focal-plane Digital Photon-counting Pixel Array
NASA Technical Reports Server (NTRS)
Fossum, Eric R.; Pain, Bedabrata
1997-01-01
A solid-state focal-plane imaging system comprises an NxN array of high gain. low-noise unit cells. each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultra low level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer(either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (greater than 1mV/e(-)) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e(-))generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascade amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the may of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on anyone detector diode during any clock cycle.
CMOS SiPM with integrated amplifier
NASA Astrophysics Data System (ADS)
Schwinger, Alexander; Brockherde, Werner; Hosticka, Bedrich J.; Vogt, Holger
2017-02-01
The integration of silicon photomultiplier (SiPM) and frontend electronics in a suitable optoelectronic CMOS process is a promising approach to increase the versatility of single-photon avalanche diode (SPAD)-based singlephoton detectors. By integrating readout amplifiers, the device output capacitance can be reduced to minimize the waveform tail, which is especially important for large area detectors (>10 × 10mm2). Possible architectures include a single readout amplifier for the whole detector, which reduces the output capacitance to 1:1 pF at minimal reduction in detector active area. On the other hand, including a readout amplifier in every SiPM cell would greatly improve the total output capacitance by minimizing the influence of metal routing parasitic capacitance, but requiring a prohibitive amount of detector area. As tradeoff, the proposed detector features one readout amplifier for each column of the detector matrix to allow for a moderate reduction in output capacitance while allowing the electronics to be placed in the periphery of the active detector area. The presented detector with a total size of 1.7 ♢ 1.0mm2 features 400 cells with a 50 μm pitch, where the signal of each column of 20 SiPM cells is summed in a readout channel. The 20 readout channels are subsequently summed into one output channel, to allow the device to be used as a drop-in replacement for commonly used analog SiPMs.
Femtosecond Photon-Counting Receiver
NASA Technical Reports Server (NTRS)
Krainak, Michael A.; Rambo, Timothy M.; Yang, Guangning; Lu, Wei; Numata, Kenji
2016-01-01
An optical correlation receiver is described that provides ultra-precise distance and/or time/pulse-width measurements even for weak (single photons) and short (femtosecond) optical signals. A new type of optical correlation receiver uses a fourth-order (intensity) interferometer to provide micron distance measurements even for weak (single photons) and short (femtosecond) optical signals. The optical correlator uses a low-noise-integrating detector that can resolve photon number. The correlation (range as a function of path delay) is calculated from the variance of the photon number of the difference of the optical signals on the two detectors. Our preliminary proof-of principle data (using a short-pulse diode laser transmitter) demonstrates tens of microns precision.
Femtosecond Photon-Counting Receiver
NASA Technical Reports Server (NTRS)
Krainak, Michael A.; Rambo, Timothy M.; Yang, Guangning; Lu, Wei; Numata, Kenji
2016-01-01
An optical correlation receiver is described that provides ultra-precise distance and/or time-pulse-width measurements even for weak (single photons) and short (femtosecond) optical signals. A new type of optical correlation receiver uses a fourth-order (intensity) interferometer to provide micron distance measurements even for weak (single photons) and short (femtosecond) optical signals. The optical correlator uses a low-noise-integrating detector that can resolve photon number. The correlation (range as a function of path delay) is calculated from the variance of the photon number of the difference of the optical signals on the two detectors. Our preliminary proof-of principle data (using a short-pulse diode laser transmitter) demonstrates tens of microns precision.
Avalanche diodes for the generation of coherent radiation
NASA Technical Reports Server (NTRS)
Penfield, P., Jr.
1973-01-01
Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.
A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit
NASA Astrophysics Data System (ADS)
Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin
2017-07-01
We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.
Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes
NASA Technical Reports Server (NTRS)
Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)
2017-01-01
The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.
Leonardo (formerly Selex ES) infrared sensors for astronomy: present and future
NASA Astrophysics Data System (ADS)
Baker, Ian; Maxey, Chris; Hipwood, Les; Barnes, Keith
2016-07-01
Many branches of science require infrared detectors sensitive to individual photons. Applications range from low background astronomy to high speed imaging. Leonardo in Southampton, UK, has been developing HgCdTe avalanche photodiode (APD) sensors for astronomy in collaboration with European Southern Observatory (ESO) since 2008 and more recently the University of Hawaii. The devices utilise Metal Organic Vapour Phase Epitaxy, MOVPE, grown on low-cost GaAs substrates and in combination with a mesa device structure achieve very low dark current and near-ideal MTF. MOVPE provides the ability to grow complex HgCdTe heterostructures and these have proved crucial to suppress breakdown currents and allow high avalanche gain in low background situations. A custom device called Saphira (320x256/24μm) has been developed for wavefront sensors, interferometry and transient event imaging. This device has achieved read noise as low as 0.26 electrons rms and single photon imaging with avalanche gain up to x450. It is used in the ESO Gravity program for adaptive optics and fringe tracking and has been successfully trialled on the 3m NASA IRTF, 8.2m Subaru and 60 inch Mt Palomar for lucky imaging and wavefront sensing. In future the technology offers much shorter observation times for read-noise limited instruments, particularly spectroscopy. The paper will describe the MOVPE APD technology and current performance status.
Development of solid-state avalanche amorphous selenium for medical imaging.
Scheuermann, James R; Goldan, Amir H; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei
2015-03-01
Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.
Single chip lidar with discrete beam steering by digital micromirror device.
Smith, Braden; Hellman, Brandon; Gin, Adley; Espinoza, Alonzo; Takashima, Yuzuru
2017-06-26
A novel method of beam steering enables a large field of view and reliable single chip light detection and ranging (lidar) by utilizing a mass-produced digital micromirror device (DMD). Using a short pulsed laser, the micromirrors' rotation is frozen in mid-transition, which forms a programmable blazed grating. The blazed grating efficiently redistributes the light to a single diffraction order, among several. We demonstrated time of flight measurements for five discrete angles using this beam steering method with a nano second 905nm laser and Si avalanche diode. A distance accuracy of < 1 cm over a 1 m distance range, a 48° full field of view, and a measurement rate of 3.34k points/s is demonstrated.
NASA Astrophysics Data System (ADS)
O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.
2017-10-01
Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.
High bit rate germanium single photon detectors for 1310nm
NASA Astrophysics Data System (ADS)
Seamons, J. A.; Carroll, M. S.
2008-04-01
There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD operated at relatively short GM hold-off times to examine whether there are potential advantages to using Ge for 1310 nm single photon detection. A weaker after-pulsing dependence on frequency is observed offering initial indications of the potential that Ge APDs might provide better high frequency performance.
Hybrid indium phosphide-on-silicon nanolaser diode
NASA Astrophysics Data System (ADS)
Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice
2017-04-01
The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.
NASA Astrophysics Data System (ADS)
Ingargiola, Antonino; Assanelli, Mattia; Gallivanoni, Andrea; Rech, Ivan; Ghioni, Massimo; Cova, Sergio
2009-05-01
Improving SPAD performances, such as dark count rate and quantum efficiency, without degrading the photontiming jitter is a challenging task that requires a clear understanding of the physical mechanisms involved. In this paper we investigate the contribution of the avalanche buildup statistics and the lateral avalanche propagation to the photon-timing jitter in silicon SPAD devices. Recent works on the buildup statistics focused on the uniform electric field case, however these results can not be applied to Si SPAD devices in which field profile is far from constant. We developed a 1-D Monte Carlo (MC) simulator using the real non-uniform field profiles derived from Secondary Ion Mass Spectroscopy (SIMS) measurements. Local and non-local models for impact ionization phenomena were considered. The obtained results, in particular the mean multiplication rate and jitter of the buildup filament, allowed us to simulate the statistical spread of the avalanche current on the device active area. We included space charge effects and a detailed lumped model for the external electronics and parasitics. We found that, in agreement with some experimental evidences, the avalanche buildup contribution to the total timing jitter is non-negligible in our devices. Moreover the lateral propagation gives an additional contribution that can explain the increasing trend of the photon-timing jitter with the comparator threshold.
Emerging technologies in Si active photonics
NASA Astrophysics Data System (ADS)
Wang, Xiaoxin; Liu, Jifeng
2018-06-01
Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.
Structural and Electrical-Optical Characterizations of Semiconductor-Atomic Superlattice
2007-05-01
and Avalanche diodes certainly fall into this category. Resonant tunneling diodes like Esaki Tunnel diodes are NDC devices belong to a class where...Heterostructures, Eds. M. Dutta and M. Stroscio, (World Sci. 2003, Singapore), p221 177 Cooling by Inverse Nottingham Effect with Resonant Tunneling ...controlled emitter, V. Semet, V.T. Binh, J.Zhang, J.Yang, M.A. Khan, and R. Tsu, APL. 84,1937 (2004) 186 Stability Issues in Tunneling via Quantum
Free-running InGaAs single photon detector with 1 dark count per second at 10% efficiency
DOE Office of Scientific and Technical Information (OSTI.GOV)
Korzh, B., E-mail: Boris.Korzh@unige.ch; Walenta, N.; Lunghi, T.
We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse probability of 2.2% for 20 μs of deadtime. This was achieved by using an active hold-off circuit and cooling the NFAD with a free-piston stirling cooler down to temperatures of −110 °C. We integrated two detectors into a practical, 625 MHz clocked quantum key distribution system. Stable, real-time key distribution in the presence of 30 dB channel loss was possible, yielding a secret key rate of 350 bps.
Hacking commercial quantum cryptography systems by tailored bright illumination
NASA Astrophysics Data System (ADS)
Lydersen, Lars; Wiechers, Carlos; Wittmann, Christoffer; Elser, Dominique; Skaar, Johannes; Makarov, Vadim
2010-10-01
The peculiar properties of quantum mechanics allow two remote parties to communicate a private, secret key, which is protected from eavesdropping by the laws of physics. So-called quantum key distribution (QKD) implementations always rely on detectors to measure the relevant quantum property of single photons. Here we demonstrate experimentally that the detectors in two commercially available QKD systems can be fully remote-controlled using specially tailored bright illumination. This makes it possible to tracelessly acquire the full secret key; we propose an eavesdropping apparatus built from off-the-shelf components. The loophole is likely to be present in most QKD systems using avalanche photodiodes to detect single photons. We believe that our findings are crucial for strengthening the security of practical QKD, by identifying and patching technological deficiencies.
Geiger mode avalanche photodiodes for microarray systems
NASA Astrophysics Data System (ADS)
Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan
2002-06-01
New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.
Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.
Eklund, Karin; Ahnesjö, Anders
2010-11-01
Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode were shown to give comparable, or better, results than the traditionally used shielded diode. Spectra calculated for photon fields in water can be directly used for modeling the response of unshielded silicon diodes with plastic encapsulations. Unshielded diodes used together with appropriate corrections can replace shielded diodes in photon dose measurements.
Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin
2017-06-27
Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.
Wilman, Edward S; Gardiner, Sara H; Nomerotski, Andrei; Turchetta, Renato; Brouard, Mark; Vallance, Claire
2012-01-01
A new type of ion detector for mass spectrometry and general detection of low energy ions is presented. The detector consists of a scintillator optically coupled to a single-photon avalanche photodiode (SPAD) array. A prototype sensor has been constructed from a LYSO (Lu(1.8)Y(0.2)SiO(5)(Ce)) scintillator crystal coupled to a commercial SPAD array detector. As proof of concept, the detector is used to record the time-of-flight mass spectra of butanone and carbon disulphide, and the dependence of detection sensitivity on the ion kinetic energy is characterised.
NASA Astrophysics Data System (ADS)
Martinenghi, E.; Di Sieno, L.; Contini, D.; Sanzaro, M.; Pifferi, A.; Dalla Mora, A.
2016-07-01
We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm2 together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).
FRETBursts: An Open Source Toolkit for Analysis of Freely-Diffusing Single-Molecule FRET
Lerner, Eitan; Chung, SangYoon; Weiss, Shimon; Michalet, Xavier
2016-01-01
Single-molecule Förster Resonance Energy Transfer (smFRET) allows probing intermolecular interactions and conformational changes in biomacromolecules, and represents an invaluable tool for studying cellular processes at the molecular scale. smFRET experiments can detect the distance between two fluorescent labels (donor and acceptor) in the 3-10 nm range. In the commonly employed confocal geometry, molecules are free to diffuse in solution. When a molecule traverses the excitation volume, it emits a burst of photons, which can be detected by single-photon avalanche diode (SPAD) detectors. The intensities of donor and acceptor fluorescence can then be related to the distance between the two fluorophores. While recent years have seen a growing number of contributions proposing improvements or new techniques in smFRET data analysis, rarely have those publications been accompanied by software implementation. In particular, despite the widespread application of smFRET, no complete software package for smFRET burst analysis is freely available to date. In this paper, we introduce FRETBursts, an open source software for analysis of freely-diffusing smFRET data. FRETBursts allows executing all the fundamental steps of smFRET bursts analysis using state-of-the-art as well as novel techniques, while providing an open, robust and well-documented implementation. Therefore, FRETBursts represents an ideal platform for comparison and development of new methods in burst analysis. We employ modern software engineering principles in order to minimize bugs and facilitate long-term maintainability. Furthermore, we place a strong focus on reproducibility by relying on Jupyter notebooks for FRETBursts execution. Notebooks are executable documents capturing all the steps of the analysis (including data files, input parameters, and results) and can be easily shared to replicate complete smFRET analyzes. Notebooks allow beginners to execute complex workflows and advanced users to customize the analysis for their own needs. By bundling analysis description, code and results in a single document, FRETBursts allows to seamless share analysis workflows and results, encourages reproducibility and facilitates collaboration among researchers in the single-molecule community. PMID:27532626
Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.
Zimmler, Mariano A; Stichtenoth, Daniel; Ronning, Carsten; Yi, Wei; Narayanamurti, Venkatesh; Voss, Tobias; Capasso, Federico
2008-06-01
We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.
Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Vitiello, Miriam S
2016-03-15
Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology.
Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Vitiello, Miriam S.
2016-01-01
Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology. PMID:26976199
Metastability and avalanche dynamics in strongly correlated gases with long-range interactions
NASA Astrophysics Data System (ADS)
Hruby, Lorenz; Dogra, Nishant; Landini, Manuele; Donner, Tobias; Esslinger, Tilman
2018-03-01
We experimentally study the stability of a bosonic Mott insulator against the formation of a density wave induced by long-range interactions and characterize the intrinsic dynamics between these two states. The Mott insulator is created in a quantum degenerate gas of 87-Rubidium atoms, trapped in a 3D optical lattice. The gas is located inside and globally coupled to an optical cavity. This causes interactions of global range, mediated by photons dispersively scattered between a transverse lattice and the cavity. The scattering comes with an atomic density modulation, which is measured by the photon flux leaking from the cavity. We initialize the system in a Mott-insulating state and then rapidly increase the global coupling strength. We observe that the system falls into either of two distinct final states. One is characterized by a low photon flux, signaling a Mott insulator, and the other is characterized by a high photon flux, which we associate with a density wave. Ramping the global coupling slowly, we observe a hysteresis loop between the two states—a further signature of metastability. A comparison with a theoretical model confirms that the metastability originates in the competition between short- and global-range interactions. From the increasing photon flux monitored during the switching process, we find that several thousand atoms tunnel to a neighboring site on the timescale of the single-particle dynamics. We argue that a density modulation, initially forming in the compressible surface of the trapped gas, triggers an avalanche tunneling process in the Mott-insulating region.
Infrared sensors for Earth observation missions
NASA Astrophysics Data System (ADS)
Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.
2007-10-01
SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.
Uptake of CeO2 nanoparticles and its effect on growth of Medicago arborea In vitro plantlets.
Gomez-Garay, Aranzazu; Pintos, Beatriz; Manzanera, Jose Antonio; Lobo, Carmen; Villalobos, Nieves; Martín, Luisa
2014-10-01
The present study analyzes some effects of nano-CeO2 particles on the growth of in vitro plantlets of Medicago arborea when the nanoceria was added to the culture medium. Various concentrations of nano-CeO2 and bulk ceric oxide particles in suspension form were introduced to the agar culture medium to compare the effects of nanoceria versus ceric oxide bulk material. Germination rate and shoot dry weight were not affected by the addition of ceric oxide to the culture media. Furthermore, no effects were observed on chlorophyll content (single-photon avalanche diode (SPAD) measurements) due to the presence of either nano- or micro-CeO2 in the culture medium. When low concentrations of nanoceria were added to the medium, the number of trifoliate leaves and the root length increased but the root dry weight decreased. Also the values of maximum photochemical efficiency of PSII (F(v)/F m) showed a significant decrease. Dark-adapted minimum fluorescence (F 0) significantly increased in the presence of 200 mg L(-1) nanoceria and 400 mg L(-1) bulk material. Root tissues were more sensitive to nanoceria than were the shoots at lower concentrations of nanoceria. A stress effect was observed on M. arborea plantlets due to cerium uptake.
Long-distance entanglement-based quantum key distribution experiment using practical detectors.
Takesue, Hiroki; Harada, Ken-Ichi; Tamaki, Kiyoshi; Fukuda, Hiroshi; Tsuchizawa, Tai; Watanabe, Toshifumi; Yamada, Koji; Itabashi, Sei-Ichi
2010-08-02
We report an entanglement-based quantum key distribution experiment that we performed over 100 km of optical fiber using a practical source and detectors. We used a silicon-based photon-pair source that generated high-purity time-bin entangled photons, and high-speed single photon detectors based on InGaAs/InP avalanche photodiodes with the sinusoidal gating technique. To calculate the secure key rate, we employed a security proof that validated the use of practical detectors. As a result, we confirmed the successful generation of sifted keys over 100 km of optical fiber with a key rate of 4.8 bit/s and an error rate of 9.1%, with which we can distill secure keys with a key rate of 0.15 bit/s.
High brightness diode laser module development at nLIGHT Photonics
NASA Astrophysics Data System (ADS)
Price, Kirk; Karlsen, Scott; Brown, Aaron; Reynolds, Mitch; Mehl, Ron; Leisher, Paul; Patterson, Steve; Bell, Jake; Martinsen, Rob
2009-05-01
We report on the development of ultra-high brightness laser diode modules at nLIGHT Photonics. This paper demonstrates a laser diode module capable of coupling over 100W at 976 nm into a 105 μm, 0.15 NA fiber with fiber coupling efficiency greater than 85%. The high brightness module has an optical excitation under 0.13 NA, is virtually free of cladding modes, and has been wavelength stabilized with the use of volume holographic gratings for narrow-band operation. Utilizing nLIGHT's Pearl product architecture, these modules are based on hard soldered single emitters packaged into a compact and passively-cooled package. These modules are designed to be compatible with high power 7:1 fused fiber combiners, enabling over 500W power coupled into a 220 μm, 0.22 NA fiber. These modules address the need in the market for high brightness and wavelength stabilized diode lasers for pumping fiber lasers and solid-state laser systems.
Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm
DOE Office of Scientific and Technical Information (OSTI.GOV)
Comandar, L. C.; Engineering Department, Cambridge University, 9 J J Thomson Ave, Cambridge CB3 0FA; Fröhlich, B.
We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with anmore » increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scheuermann, James R., E-mail: James.Scheuermann@stonybrook.edu; Goldan, Amir H.; Zhao, Wei
Purpose: Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. Methods: The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layermore » (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. Results: An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. Conclusions: We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.« less
Magnetic avalanches in manganese-acetate, "magnetic deflagration"
NASA Astrophysics Data System (ADS)
Suzuki, Yoko
Mn12-acetate, first synthesized in 1980 by Lis, is one example of a class of many molecules called single molecule magnets (SMMs) or molecular nanomagnets. These molecules have several atomic spins strongly coupled together within each molecule. They exhibit interesting quantum mechanical phenomena at low temperatures such as quantum tunneling of magnetization, which was first found with Mn12-acetate in 1996 by Friedman, et al. , and Berry phase oscillations which were measured in Fe8 (another SMM) in 1999 by Wernsdorfer, et al. In addition to possible application as memory storage and qubits for quantum computers, these systems provide the means for studies of mesoscopic physics as well as the interactions of the molecules with their environment, such as phonon, photon, nuclear spin, intermolecular dipole, and exchange interactions. Mn12-acetate has twelve Mn ions magnetically coupled in the center of the molecule yielding a giant spin of S = 10 at low temperature. It also has a large uniaxial anisotropy of 65 K. Below 3 K, magnetization curves show strong hysteresis due to the anisotropy barrier. At thesis temperatures, the spin relaxes through the barrier by quantum tunneling of magnetization, which produces regularly-spaced multiple resonant steps in the hysteresis curve. Magnetic avalanches, first detected by Paulsen et al., also occur for some samples only at low temperature, leading to a very fast single-step reversal of the full magnetization, which clearly differs from relaxation by tunneling. In this thesis, I present the results of detailed experimental studies of two aspects of magnetic avalanche phenomenon: "conditions for the triggering of avalanches" and "propagation of the avalanche front". In the first study, we find the magnetic fields at which avalanches occur are stochastically distributed in a particular range of fields. For the second study, we conducted local time-resolved measurements. The results indicate the magnetization avalanches spread as a narrow interface that propagate through the crystal at a constant velocity which is roughly two orders of magnitude smaller than the speed of sound in solids. We argue this phenomenon is closely analogous to the propagation of a flame front(deflagration) through a flammable chemical substance.
NASA Astrophysics Data System (ADS)
Aguayo-Rodríguez, Gustavo; Zaldívar-Huerta, Ignacio E.; Rodríguez-Asomoza, Jorge; García-Juárez, Alejandro; Alonso-Rubio, Paul
2010-01-01
The generation, distribution and processing of microwave signals in the optical domain is a topic of research due to many advantages such as low loss, light weight, broadband width, and immunity to electromagnetic interference. In this sense, a novel all-optical microwave photonic filter scheme is proposed and experimentally demonstrated in the frequency range of 0.01-15.0 GHz. A microwave signal generated by optical mixing drives the microwave photonic filter. Basically, photonic filter is composed by a multimode laser diode, an integrated Mach- Zehnder intensity modulator, and 28.3-Km of single-mode standard fiber. Frequency response of the microwave photonic filter depends of the emission spectral characteristics of the multimode laser diode, the physical length of the single-mode standard fiber, and the chromatic dispersion factor associated to this type of fiber. Frequency response of the photonic filter is composed of a low-pass band centered at zero frequency, and several band-pass lobes located periodically on the microwave frequency range. Experimental results are compared by means of numerical simulations in Matlab exhibiting a small deviation in the frequency range of 0.01-5.0 GHz. However, this deviation is more evident when higher frequencies are reached. In this paper, we evaluate the causes of this deviation in the range of 5.0-15.0 GHz analyzing the parameters involved in the frequency response. This analysis permits to improve the performance of the photonic microwave filter to higher frequencies.
da Silva, Thiago Ferreira; Xavier, Guilherme B; Temporão, Guilherme P; von der Weid, Jean Pierre
2012-08-13
By employing real-time monitoring of single-photon avalanche photodiodes we demonstrate how two types of practical eavesdropping strategies, the after-gate and time-shift attacks, may be detected. Both attacks are identified with the detectors operating without any special modifications, making this proposal well suited for real-world applications. The monitoring system is based on accumulating statistics of the times between consecutive detection events, and extracting the afterpulse and overall efficiency of the detectors in real-time using mathematical models fit to the measured data. We are able to directly observe changes in the afterpulse probabilities generated from the after-gate and faint after-gate attacks, as well as different timing signatures in the time-shift attack. We also discuss the applicability of our scheme to other general blinding attacks.
Crilly, Richard
2014-01-01
A commercial version of a synthetic single crystal diamond detector (SCDD) in a Schottky diode configuration was recently released as the new type 60019 microDiamond detector (PTW‐Freiburg, Germany). In this study we investigate the dosimetric properties of this detector to independently confirm that findings from the developing group of the SCDDs still hold true for the commercial version of the SCDDs. We further explore if the use of the microDiamond detector can be expanded to high‐energy photon beams of up to 15 MV and to large field measurements. Measurements were performed with an Elekta Synergy linear accelerator delivering 6, 10, and 15 MV X‐rays, as well as 6, 9, 12, 15, and 20 MeV electron beams. The dependence of the microdiamond detector response on absorbed dose after connecting the detector was investigated. Furthermore, the dark current of the diamond detector was observed after irradiation. Results are compared to similar results from measurements with a diamond detector type 60003. Energy dependency was investigated, as well. Photon depth‐dose curves were measured for field sizes 3×3,10×10, and 30×30cm2. PDDs were measured with the Semiflex type 31010 detector, microLion type 31018 detector, P Diode type 60016, SRS Diode type 60018, and the microDiamond type 60019 detector (all PTW‐Freiburg). Photon profiles were measured at a depth of 10 cm. Electron depth‐dose curves normalized to the dose maximum were measured with the 14×14cm2 electron cone. PDDs were measured with a Markus chamber type 23343, an E Diode type 60017 and the microDiamond type 60019 detector (all PTW‐Freiburg). Profiles were measured with the E Diode and microDiamond at half of D90,D90,D70, and D50 depths and for electron cone sizes of 6×6cm2, 14×14cm2, and 20×20cm2. Within a tolerance of 0.5% detector response of the investigated detector was stable without any preirradiation. After preirradition with approximately 250 cGy the detector response was stable within 0.1%. A dark current after irradiation was not observed. The microDiamond detector shows no energy dependence in high energy photon or electron dosimetry. Electron PDD measurements with the E Diode and microDiamond are in good agreement. However, compared to E Diode measurements, dose values in the bremsstrahlungs region are about 0.5% lower when measured with the microDiamond detector. Markus detector measurements agree with E Diode measurements in the bremsstrahlungs region. For depths larger than dmax, depth‐dose curves of photon beams measured with the microDiamond detector are in close agreement to those measured with the microLion detector for small fields and with those measured with a Semiflex 0.125 cc ionization chamber for large fields. Differences are in the range of 0.25% and less. For profile measurements, microDiamond detector measurements agree well with microLion and P Diode measurements in the high‐dose region of the profile and the penumbra region. For areas outside the open field, P Diode measurements are about 0.5%–1.0% higher than microDiamond and microLion measurements. Thus it becomes evident that the investigated diamond detector (type 60019) is suitable for a wide range of applications in high‐energy photon and electron dosimetry and is interesting for relative, as well as absolute, dosimetry. PACS numbers: 00.06, 80.87 PMID:25493512
Deterministic photon-emitter coupling in chiral photonic circuits.
Söllner, Immo; Mahmoodian, Sahand; Hansen, Sofie Lindskov; Midolo, Leonardo; Javadi, Alisa; Kiršanskė, Gabija; Pregnolato, Tommaso; El-Ella, Haitham; Lee, Eun Hye; Song, Jin Dong; Stobbe, Søren; Lodahl, Peter
2015-09-01
Engineering photon emission and scattering is central to modern photonics applications ranging from light harvesting to quantum-information processing. To this end, nanophotonic waveguides are well suited as they confine photons to a one-dimensional geometry and thereby increase the light-matter interaction. In a regular waveguide, a quantum emitter interacts equally with photons in either of the two propagation directions. This symmetry is violated in nanophotonic structures in which non-transversal local electric-field components imply that photon emission and scattering may become directional. Here we show that the helicity of the optical transition of a quantum emitter determines the direction of single-photon emission in a specially engineered photonic-crystal waveguide. We observe single-photon emission into the waveguide with a directionality that exceeds 90% under conditions in which practically all the emitted photons are coupled to the waveguide. The chiral light-matter interaction enables deterministic and highly directional photon emission for experimentally achievable on-chip non-reciprocal photonic elements. These may serve as key building blocks for single-photon optical diodes, transistors and deterministic quantum gates. Furthermore, chiral photonic circuits allow the dissipative preparation of entangled states of multiple emitters for experimentally achievable parameters, may lead to novel topological photon states and could be applied for directional steering of light.
Deterministic photon-emitter coupling in chiral photonic circuits
NASA Astrophysics Data System (ADS)
Söllner, Immo; Mahmoodian, Sahand; Hansen, Sofie Lindskov; Midolo, Leonardo; Javadi, Alisa; Kiršanskė, Gabija; Pregnolato, Tommaso; El-Ella, Haitham; Lee, Eun Hye; Song, Jin Dong; Stobbe, Søren; Lodahl, Peter
2015-09-01
Engineering photon emission and scattering is central to modern photonics applications ranging from light harvesting to quantum-information processing. To this end, nanophotonic waveguides are well suited as they confine photons to a one-dimensional geometry and thereby increase the light-matter interaction. In a regular waveguide, a quantum emitter interacts equally with photons in either of the two propagation directions. This symmetry is violated in nanophotonic structures in which non-transversal local electric-field components imply that photon emission and scattering may become directional. Here we show that the helicity of the optical transition of a quantum emitter determines the direction of single-photon emission in a specially engineered photonic-crystal waveguide. We observe single-photon emission into the waveguide with a directionality that exceeds 90% under conditions in which practically all the emitted photons are coupled to the waveguide. The chiral light-matter interaction enables deterministic and highly directional photon emission for experimentally achievable on-chip non-reciprocal photonic elements. These may serve as key building blocks for single-photon optical diodes, transistors and deterministic quantum gates. Furthermore, chiral photonic circuits allow the dissipative preparation of entangled states of multiple emitters for experimentally achievable parameters, may lead to novel topological photon states and could be applied for directional steering of light.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Martinenghi, E., E-mail: edoardo.martinenghi@polimi.it; Di Sieno, L.; Contini, D.
2016-07-15
We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm{sup 2} together with themore » suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).« less
Thermal blinding of gated detectors in quantum cryptography.
Lydersen, Lars; Wiechers, Carlos; Wittmann, Christoffer; Elser, Dominique; Skaar, Johannes; Makarov, Vadim
2010-12-20
It has previously been shown that the gated detectors of two commercially available quantum key distribution (QKD) systems are blindable and controllable by an eavesdropper using continuous-wave illumination and short bright trigger pulses, manipulating voltages in the circuit [Nat. Photonics 4, 686 (2010)]. This allows for an attack eavesdropping the full raw and secret key without increasing the quantum bit error rate (QBER). Here we show how thermal effects in detectors under bright illumination can lead to the same outcome. We demonstrate that the detectors in a commercial QKD system Clavis2 can be blinded by heating the avalanche photo diodes (APDs) using bright illumination, so-called thermal blinding. Further, the detectors can be triggered using short bright pulses once they are blind. For systems with pauses between packet transmission such as the plug-and-play systems, thermal inertia enables Eve to apply the bright blinding illumination before eavesdropping, making her more difficult to catch.
Microgap ultra-violet detector
Wuest, Craig R.; Bionta, Richard M.
1994-01-01
A microgap ultra-violet detector of photons with wavelengths less than 400 run (4000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse.
Integrated Avalanche Photodiode arrays
DOE Office of Scientific and Technical Information (OSTI.GOV)
Harmon, Eric S.
2017-04-18
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
Integrated avalanche photodiode arrays
Harmon, Eric S.
2015-07-07
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
Microgap ultra-violet detector
Wuest, C.R.; Bionta, R.M.
1994-09-20
A microgap ultra-violet detector of photons with wavelengths less than 400 run (4,000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap is disclosed. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse. 2 figs.
Avalanche photodiode photon counting receivers for space-borne lidars
NASA Technical Reports Server (NTRS)
Sun, Xiaoli; Davidson, Frederic M.
1991-01-01
Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.
Monolithic photonic integrated circuit with a GaN-based bent waveguide
NASA Astrophysics Data System (ADS)
Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin
2018-06-01
Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.
Chen, Xuanhu; Xu, Yang; Zhou, Dong; Yang, Sen; Ren, Fang-Fang; Lu, Hai; Tang, Kun; Gu, Shulin; Zhang, Rong; Zheng, Youdou; Ye, Jiandong
2017-10-25
The metastable α-phase Ga 2 O 3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga 2 O 3 remains challenging. To this end, single crystalline α-Ga 2 O 3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga 2 O 3 /ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 10 3 and a detectivity of 9.66 × 10 12 cm Hz 1/2 W -1 . Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W -1 at -5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/Ga 2 O 3 and Ga 2 O 3 /ZnO heterointerfaces. The device also allows avalanche multiplication processes initiated by pure electron and hole injections under different illumination conditions. High avalanche gains over 10 3 and a low ionization coefficient ratio of electrons and holes are yielded, leading to a total gain over 10 5 and a high responsivity of 1.10 × 10 4 A W -1 . Such avalanche heterostructures with ultrahigh gains and bias-tunable UV detecting functionality hold promise for developing high performance solar-blind photodetectors.
Wuest, Craig R.; Bionta, Richard M.; Ables, Elden
1994-01-01
An x-ray detector which provides for the conversion of x-ray photons into photoelectrons and subsequent amplification of these photoelectrons through the generation of electron avalanches in a thin gas-filled region subject to a high electric potential. The detector comprises a cathode (photocathode) and an anode separated by the thin, gas-filled region. The cathode may comprise a substrate, such a beryllium, coated with a layer of high atomic number material, such as gold, while the anode can be a single conducting plane of material, such as gold, or a plane of resistive material, such as chromium/silicon monoxide, or multiple areas of conductive or resistive material, mounted on a substrate composed of glass, plastic or ceramic. The charge collected from each electron avalanche by the anode is passed through processing electronics to a point of use, such as an oscilloscope.
Wuest, C.R.; Bionta, R.M.; Ables, E.
1994-05-03
An x-ray detector is disclosed which provides for the conversion of x-ray photons into photoelectrons and subsequent amplification of these photoelectrons through the generation of electron avalanches in a thin gas-filled region subject to a high electric potential. The detector comprises a cathode (photocathode) and an anode separated by the thin, gas-filled region. The cathode may comprise a substrate, such a beryllium, coated with a layer of high atomic number material, such as gold, while the anode can be a single conducting plane of material, such as gold, or a plane of resistive material, such as chromium/silicon monoxide, or multiple areas of conductive or resistive material, mounted on a substrate composed of glass, plastic or ceramic. The charge collected from each electron avalanche by the anode is passed through processing electronics to a point of use, such as an oscilloscope. 3 figures.
Griessbach, Irmgard; Lapp, Markus; Bohsung, Jörg; Gademann, Günther; Harder, Dietrich
2005-12-01
Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.
Resonantly diode laser pumped 1.6-μm Er:YAG laser
NASA Astrophysics Data System (ADS)
Garbuzov, Dmitri; Kudryashov, Igor; Dubinskii, Mark
2005-06-01
We report what is believed to be the first demonstration of direct resonant diode pumping of a 1.6-mm Er3+-doped bulk solid-state laser (DPSSL). The most of the results is obtained with pumping Er:YAG by the single mode diode laser packaged in fibered modules. The fibered modules, emitting at 1470 nm and 1530 nm wavelength with and without fiber grating (FBG) stabilization, have been used in pumping experiments. The very first results on high power DPSSL operation achieved with diode array pumping also will be presented. The highest absorbed photon conversion efficiency of 26% has been obtained for Er:YAG DPSSL using the 1470-nm single-mode module. Analysis of the DPSSL input-output characteristics suggests that the obtained slope efficiency can be increased at least up to 40% through the reduction of intracavity losses and pumping efficiency improvement. Diode pumped SSL (DPSSL) operates at a wavelength of 1617 nm and 1645 nm.
Optimization of single photon detection model based on GM-APD
NASA Astrophysics Data System (ADS)
Chen, Yu; Yang, Yi; Hao, Peiyu
2017-11-01
One hundred kilometers high precision laser ranging hopes the detector has very strong detection ability for very weak light. At present, Geiger-Mode of Avalanche Photodiode has more use. It has high sensitivity and high photoelectric conversion efficiency. Selecting and designing the detector parameters according to the system index is of great importance to the improvement of photon detection efficiency. Design optimization requires a good model. In this paper, we research the existing Poisson distribution model, and consider the important detector parameters of dark count rate, dead time, quantum efficiency and so on. We improve the optimization of detection model, select the appropriate parameters to achieve optimal photon detection efficiency. The simulation is carried out by using Matlab and compared with the actual test results. The rationality of the model is verified. It has certain reference value in engineering applications.
Comparison of 16-Channel Laser Photoreceivers for Topographic Mapping
NASA Technical Reports Server (NTRS)
Krainak, Michael A.; Yang, Guangning; Sun, XiaoIi; Lu, Wei; Bai, Xiaogang; Yuan, Ping; McDonald, Paul; Boisvert, Joseph; Woo, Robyn; Wan, Kam;
2011-01-01
Topographic mapping lidar instruments must be able to detect extremely weak laser return signals from high altitudes including orbital distance. The signals have a wide dynamic range caused by the variability in atmospheric transmission and surface reflectance under a fast moving spacecraft. Ideally, lidar detectors should be able to detect laser signal return pulses at the single photon level and produce linear output for multiple photon events. Silicon avalanche photodiode (APO) detectors have been used in most space lidar receivers to date. Their sensitivity is typically hundreds of photons per pulse, and is limited by the quantum efficiency, APO gain noise, dark current, and preamplifier noise. NASA is pursuing three approaches for a 16-channel laser photoreceiver for use on the next generation direct-detection airborne and spacebome lidars. We present our measurement results and a comparison of their performance.
Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging
NASA Astrophysics Data System (ADS)
Singh, Anand; Pal, Ravinder
2017-11-01
Opto-electronic performance of the InGaAs/i-InGaAs/InP short wavelength infrared focal plane array suitable for high resolution imaging under low flux conditions and ranging is presented. More than 85% quantum efficiency is achieved in the optimized detector structure. Isotropic nature of the wet etching process poses a challenge in maintaining the required control in the small pitch high density detector array. Etching process is developed to achieve low dark current density of 1 nA/cm2 in the detector array with 25 µm pitch at 298 K. Noise equivalent photon performance less than one is achievable showing single photon detection capability. The reported photodiode with low photon flux is suitable for active cum passive imaging, optical information processing and quantum computing applications.
SPADAS: a high-speed 3D single-photon camera for advanced driver assistance systems
NASA Astrophysics Data System (ADS)
Bronzi, D.; Zou, Y.; Bellisai, S.; Villa, F.; Tisa, S.; Tosi, A.; Zappa, F.
2015-02-01
Advanced Driver Assistance Systems (ADAS) are the most advanced technologies to fight road accidents. Within ADAS, an important role is played by radar- and lidar-based sensors, which are mostly employed for collision avoidance and adaptive cruise control. Nonetheless, they have a narrow field-of-view and a limited ability to detect and differentiate objects. Standard camera-based technologies (e.g. stereovision) could balance these weaknesses, but they are currently not able to fulfill all automotive requirements (distance range, accuracy, acquisition speed, and frame-rate). To this purpose, we developed an automotive-oriented CMOS single-photon camera for optical 3D ranging based on indirect time-of-flight (iTOF) measurements. Imagers based on Single-photon avalanche diode (SPAD) arrays offer higher sensitivity with respect to CCD/CMOS rangefinders, have inherent better time resolution, higher accuracy and better linearity. Moreover, iTOF requires neither high bandwidth electronics nor short-pulsed lasers, hence allowing the development of cost-effective systems. The CMOS SPAD sensor is based on 64 × 32 pixels, each able to process both 2D intensity-data and 3D depth-ranging information, with background suppression. Pixel-level memories allow fully parallel imaging and prevents motion artefacts (skew, wobble, motion blur) and partial exposure effects, which otherwise would hinder the detection of fast moving objects. The camera is housed in an aluminum case supporting a 12 mm F/1.4 C-mount imaging lens, with a 40°×20° field-of-view. The whole system is very rugged and compact and a perfect solution for vehicle's cockpit, with dimensions of 80 mm × 45 mm × 70 mm, and less that 1 W consumption. To provide the required optical power (1.5 W, eye safe) and to allow fast (up to 25 MHz) modulation of the active illumination, we developed a modular laser source, based on five laser driver cards, with three 808 nm lasers each. We present the full characterization of the 3D automotive system, operated both at night and during daytime, in both indoor and outdoor, in real traffic, scenario. The achieved long-range (up to 45m), high dynamic-range (118 dB), highspeed (over 200 fps) 3D depth measurement, and high precision (better than 90 cm at 45 m), highlight the excellent performance of this CMOS SPAD camera for automotive applications.
NASA Technical Reports Server (NTRS)
Sun, X.; Jester, P. L.; Palm, S. P.; Abshire, J. B.; Spinhime, J. D.; Krainak, M. A.
2006-01-01
Si avalanche photodiode (APD) single photon counting modules (SPCMs) are used in the Geoscience Laser Altimeter System (GLAS) on Ice, Cloud, anti land Elevation Satellite (ICESat), currently in orbit measuring Earth surface elevation and atmosphere backscattering. These SPCMs are used to measure cloud and aerosol backscatterings to the GLAS laser light at 532-nm wavelength with 60-70% quantum efficiencies and up to 15 millions/s maximum count rates. The performance of the SPCMs has been closely monitored since ICESat launch on January 12, 2003. There has been no measurable change in the quantum efficiency, as indicated by the average photon count rates in response to the background light from the sunlit earth. The linearity and the afterpulsing seen from the cloud and surface backscatterings profiles have been the same as those during ground testing. The detector dark count rates monitored while the spacecraft was in the dark side of the globe have increased almost linearly at about 60 counts/s per day due to space radiation damage. The radiation damage appeared to be independent of the device temperature and power states. There was also an abrupt increase in radiation damage during the solar storm in 28-30 October 2003. The observed radiation damage is a factor of two to three lower than the expected and sufficiently low to provide useful atmosphere backscattering measurements through the end of the ICESat mission. To date, these SPCMs have been in orbit for more than three years. The accumulated operating time to date has reached 290 days (7000 hours). These SPCMs have provided unprecedented receiver sensitivity and dynamic range in ICESat atmosphere backscattering measurements.
2012-03-01
applications. Springer, Netherlands Pronko PP, VanRompay PA, Horvath C, Loesel F, Juhasz T, Liu X, Mourou G (1998) Avalanche ionization and dielectric Exp...Birks TA, Russell PSJ, Roberts PJ, Allan DC (1999) Single-mode photonic band gap guidance of light in air. Science 285:1537–1539 Du D, Liu X, Mourou G ...Lowdermilk WH, Milam D (1984) Review of ultraviolet damage threshold measurements at Lawrence Livemore National Labo- ratory. Proc SPIE 476:143–162 Mann G
Generation of High Purity Photon-Pair in a Short Highly Non-Linear Fiber
2013-01-01
Avalanche photodiode. A 10 m long HNLF fabricated by Sumitomo with a core diameter of 4 microns is fusion spliced to a single mode fiber for a...parametric down conversion (SPDC) was first observed in χ(2) nonlinear crystal [3]. However, the compatibility of a nonlinear crystal source with fiber and...PAIR IN A SHORT HIGHLY NON-LINEAR FIBER 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA8750-12-1-0136 5c. PROGRAM ELEMENT NUMBER N/A 6. AUTHOR(S
Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.
Aull, Brian
2016-04-08
This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.
Quantum interference of highly-dispersive surface plasmons (Conference Presentation)
NASA Astrophysics Data System (ADS)
Tokpanov, Yury S.; Fakonas, James S.; Atwater, Harry A.
2016-09-01
Previous experiments have shown that surface plasmon polaritons (SPPs) preserve their entangled state and do not cause measurable decoherence. However, essentially all of them were done using SPPs whose dispersion was in the linear "photon-like" regime. We report in this presentation on experiments showing how transition to "true-plasmon" non-linear dispersion regime, which occurs near SPP resonance frequency, will affect quantum coherent properties of light. To generate a polarization-entangled state we utilize type-I parametric down-conversion, occurring in a pair of non-linear crystals (BiBO), glued together and rotated by 90 degrees with respect to each other. For state projection measurements, we use a pair of polarizers and single-photon avalanche diode coincidence count detectors. We interpose a plasmonic hole array in the path of down-converted light before the polarizer. Without the hole array, we measure visibility V=99-100% and Bell's number S=2.81±0.03. To study geometrical effects we fabricated plasmonic hole arrays (gold on optically polished glass) with elliptical holes (axes are 190nm and 240nm) using focused ion beam. When we put this sample in our system we measured the reduction of visibility V=86±5% using entangled light. However, measurement using classical light gave exactly the same visibility; hence, this reduction is caused only by the difference in transmission coefficients of different polarizations. As samples with non-linear dispersion we fabricated two-layer (a-Si - Au) and three-layer (a-Si - Au - a-Si) structures on optically polished glass with different pitches and circular holes. The results of measurements with these samples will be discussed along with the theoretical investigations.
Gargett, Maegan; Oborn, Brad; Metcalfe, Peter; Rosenfeld, Anatoly
2015-02-01
MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named "magic plate," for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. geant4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-line and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm(3)) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm(2) area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm(2) photon field size. The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI-linear accelerator systems. In the in-line orientation, the silicon dose is directly proportional to the water dose. In the perpendicular orientation, there is a shift in dose response relative to water in the highest dose gradient regions, at the edge of jaw-defined and single-segment MLC fields. The trend was not observed in-field for an IMRT beam. The array is expected to be a valuable tool in MRIgRT dosimetry.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gargett, Maegan, E-mail: mg406@uowmail.edu.au; Rosenfeld, Anatoly; Oborn, Brad
2015-02-15
Purpose: MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named “magic plate,” for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. Methods: GEANT4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-linemore » and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm{sup 3}) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm{sup 2} area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm{sup 2} photon field size. Results: The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. Conclusions: A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI–linear accelerator systems. In the in-line orientation, the silicon dose is directly proportional to the water dose. In the perpendicular orientation, there is a shift in dose response relative to water in the highest dose gradient regions, at the edge of jaw-defined and single-segment MLC fields. The trend was not observed in-field for an IMRT beam. The array is expected to be a valuable tool in MRIgRT dosimetry.« less
Xia, Zhenyang; Zang, Kai; Liu, Dong; ...
2017-08-21
Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xia, Zhenyang; Zang, Kai; Liu, Dong
Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less
NASA Astrophysics Data System (ADS)
Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.
2018-03-01
Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.
InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 μm
NASA Astrophysics Data System (ADS)
Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Jiang, Xudong; Patel, Ketan; Slomkowski, Krystyna; Koch, Tim; Rangwala, Sabbir; Zalud, Peter F.; Yu, Young; Tower, John; Ferraro, Joseph
2009-05-01
We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) designed for use in three-dimensional (3-D) laser radar imaging systems at 1064 nm. To our knowledge, this is the first realization of FPAs for 3-D imaging that employ a planar-passivated buried-junction InP-based GmAPD device platform. This development also included the design and fabrication of custom readout integrate circuits (ROICs) to perform avalanche detection and time-of-flight measurements on a per-pixel basis. We demonstrate photodiode arrays (PDAs) with a very narrow breakdown voltage distribution width of 0.34 V, corresponding to a breakdown voltage total variation of less than +/- 0.2%. At an excess bias voltage of 3.3 V, which provides 40% pixel-level single photon detection efficiency, we achieve average dark count rates of 2 kHz at an operating temperature of 248 K. We present the characterization of optical crosstalk induced by hot carrier luminescence during avalanche events, where we show that the worst-case crosstalk probability per pixel, which occurs for nearest neighbors, has a value of less than 1.6% and exhibits anisotropy due to isolation trench etch geometry. To demonstrate the FPA response to optical density variations, we show a simple image of a broadened optical beam.
Timing resolution and time walk in SLiK SPAD: measurement and optimization
NASA Astrophysics Data System (ADS)
Fong, Bernicy S.; Davies, Murray; Deschamps, Pierre
2017-08-01
Timing resolution (or timing jitter) and time walk are separate parameters associated with a detector's response time. Studies have been done mostly on the time resolution of various single photon detectors [1]. As the designer and manufacturer of the ultra-low noise (ƙ-factor) silicon avalanche photodiode the SLiK SPAD, which is used in many single photon counting applications, we often get inquiries from customers to better understand how this detector behaves under different operating conditions. Hence, here we will be focusing on the study of these time related parameters specifically for the SLiK SPAD, as a way to provide the most direct information for users of this detector to help with its use more efficiently and effectively. We will be providing the study data on how these parameters can be affected by temperature (both intrinsic to the detector chip and environmental input based on operating conditions), operating voltage, photon wavelength, as well as light spot size. How these parameters can be optimized and the trade-offs from optimization from the desired performance will be presented.
Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems.
Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu
2018-02-01
Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.
Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems
NASA Astrophysics Data System (ADS)
Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu
2018-02-01
Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.
The MONDO project: A secondary neutron tracker detector for particle therapy
NASA Astrophysics Data System (ADS)
Valle, S. M.; Battistoni, G.; Patera, V.; Pinci, D.; Sarti, A.; Sciubba, A.; Spiriti, E.; Marafini, M.
2017-02-01
During Particle Therapy treatments the patient irradiation produces, among different types of secondary radiation, an abundant flux of neutrons that can release a significant dose far away from the tumour region. A precise measurement of their flux, energy and angle distributions is eagerly needed in order to improve the Treatment Planning Systems software and to properly take into account the risk of late complications in the whole body. The technical challenges posed by a neutron detector aiming for high detection efficiency and good backtracking precision will be addressed within the MONDO project, whose main goal is to develop a tracking detector targeting fast and ultra-fast secondary neutrons. The neutron tracking principle is based on the reconstruction of two consequent elastic scattering interactions of a neutron with a target material. Reconstructing the recoiling protons it is hence possible to measure the energy and incoming direction of the neutron. Plastic scintillators will be used as scattering and detection media: the tracker is being developed as a matrix of squared scintillating fibres of 250 μm side. The light produced and collected in fibres will be amplified using a triple GEM-based image intensifier and acquired using CMOS Single Photon Avalanche Diode arrays. Using therapeutic beams, the principal detector goal will be the measurement of the neutron production yields, as a function of production angle and energy.
Receiver design for SPAD-based VLC systems under Poisson-Gaussian mixed noise model.
Mao, Tianqi; Wang, Zhaocheng; Wang, Qi
2017-01-23
Single-photon avalanche diode (SPAD) is a promising photosensor because of its high sensitivity to optical signals in weak illuminance environment. Recently, it has drawn much attention from researchers in visible light communications (VLC). However, existing literature only deals with the simplified channel model, which only considers the effects of Poisson noise introduced by SPAD, but neglects other noise sources. Specifically, when an analog SPAD detector is applied, there exists Gaussian thermal noise generated by the transimpedance amplifier (TIA) and the digital-to-analog converter (D/A). Therefore, in this paper, we propose an SPAD-based VLC system with pulse-amplitude-modulation (PAM) under Poisson-Gaussian mixed noise model, where Gaussian-distributed thermal noise at the receiver is also investigated. The closed-form conditional likelihood of received signals is derived using the Laplace transform and the saddle-point approximation method, and the corresponding quasi-maximum-likelihood (quasi-ML) detector is proposed. Furthermore, the Poisson-Gaussian-distributed signals are converted to Gaussian variables with the aid of the generalized Anscombe transform (GAT), leading to an equivalent additive white Gaussian noise (AWGN) channel, and a hard-decision-based detector is invoked. Simulation results demonstrate that, the proposed GAT-based detector can reduce the computational complexity with marginal performance loss compared with the proposed quasi-ML detector, and both detectors are capable of accurately demodulating the SPAD-based PAM signals.
Fluorescence lifetime imaging to differentiate bound from unbound ICG-cRGD both in vitro and in vivo
NASA Astrophysics Data System (ADS)
Stegehuis, Paulien L.; Boonstra, Martin C.; de Rooij, Karien E.; Powolny, François E.; Sinisi, Riccardo; Homulle, Harald; Bruschini, Claudio; Charbon, Edoardo; van de Velde, Cornelis J. H.; Lelieveldt, Boudewijn P. F.; Vahrmeijer, Alexander L.; Dijkstra, Jouke; van de Giessen, Martijn
2015-03-01
Excision of the whole tumor is crucial, but remains difficult for many tumor types. Fluorescence lifetime imaging could be helpful intraoperative to differentiate normal from tumor tissue. In this study we investigated the difference in fluorescence lifetime imaging of indocyanine green coupled to cyclic RGD free in solution/serum or bound to integrins e.g. in tumors. The U87-MG glioblastoma cell line, expressing high integrin levels, was cultured to use in vitro and to induce 4 subcutaneous tumors in a-thymic mice (n=4). Lifetimes of bound and unbound probe were measured with an experimental time-domain single-photon avalanche diode array (time resolution <100ps). In vivo measurements were taken 30-60 minutes after intravenous injection, and after 24 hours. The in vitro lifetime of the fluorophores was similar at different concentrations (20, 50 and 100μM) and showed a statistically significant higher lifetime (p<0.001) of bound probe compared to unbound probe. In vivo, lifetimes of the fluorophores in tumors were significantly higher (p<0.001) than at the control site (tail) at 30-60 minutes after probe injection. Lifetimes after 24 hours confirmed tumor-specific binding (also validated by fluorescence intensity images). Based on the difference in lifetime imaging, it can be concluded that it is feasible to separate between bound and unbound probes in vivo.
Object detection system using SPAD proximity detectors
NASA Astrophysics Data System (ADS)
Stark, Laurence; Raynor, Jeffrey M.; Henderson, Robert K.
2011-10-01
This paper presents an object detection system based upon the use of multiple single photon avalanche diode (SPAD) proximity sensors operating upon the time-of-flight (ToF) principle, whereby the co-ordinates of a target object in a coordinate system relative to the assembly are calculated. The system is similar to a touch screen system in form and operation except that the lack of requirement of a physical sensing surface provides a novel advantage over most existing touch screen technologies. The sensors are controlled by FPGA-based firmware and each proximity sensor in the system measures the range from the sensor to the target object. A software algorithm is implemented to calculate the x-y coordinates of the target object based on the distance measurements from at least two separate sensors and the known relative positions of these sensors. Existing proximity sensors were capable of determining the distance to an object with centimetric accuracy and were modified to obtain a wide field of view in the x-y axes with low beam angle in z in order to provide a detection area as large as possible. Design and implementation of the firmware, electronic hardware, mechanics and optics are covered in the paper. Possible future work would include characterisation with alternative designs of proximity sensors, as this is the component which determines the highest achievable accur1acy of the system.
NASA Astrophysics Data System (ADS)
Ba, Nuo; Zhong, Xin; Wang, Lei; Fei, Jin-You; Zhang, Yan; Bao, Qian-Qian; Xiao, Li
2018-03-01
We investigate photonic transport properties of the 1D moving optical lattices filled with vast cold atoms driven into a four-level ladder-type system and obtain dynamically controlled photonic bandgaps and optical nonreciprocity. It is found that the two obvious optical nonreciprocity can be generated at two well-developed photonic bandgaps based on double dark states in the presence of a radio-frequency field. However, when the radio-frequency field is absence, the only one induced photonic bandgaps with distinguishing optical nonreciprocity can be opened up via single dark state. Dynamic control of the induced photonic bandgaps and optical nonreciprocity could be exploited to achieve all-optical diodes and routing for quantum information networks.
NASA Astrophysics Data System (ADS)
Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne
2017-04-01
Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.
Parameters of a supershort avalanche electron beam generated in atmospheric-pressure air
NASA Astrophysics Data System (ADS)
Tarasenko, V. F.
2011-05-01
Conditions under which the number of runaway electrons in atmospheric-pressure air reaches ˜5 × 1010 are determined. Recommendations for creating runaway electron accelerators are given. Methods for measuring the parameters of a supershort avalanche electron beam and X-ray pulses from gas-filled diodes, as well as the discharge current and gap voltage, are described. A technique for determining the instant of runaway electron generation with respect to the voltage pulse is proposed. It is shown that the reduction in the gap voltage and the decrease in the beam current coincide in time. The mechanism of intense electron beam generation in gas-filled diodes is analyzed. It is confirmed experimentally that, in optimal regimes, the number of electrons generated in atmospheric-pressure air with energies T > eU m , where U m is the maximum gap voltage, is relatively small.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Langer, Fabian, E-mail: fabian.langer@physik.uni-wuerzburg.de; Plischke, David; Kamp, Martin
2014-08-25
In this work, we report the fabrication of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 10{sup 9 }cm{sup −2} range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g{sup (2)}(0) = 0.05).
Multi-photon microscopy with a low-cost and highly efficient Cr:LiCAF laser
Sakadić, Sava; Demirbas, Umit; Mempel, Thorsten R.; Moore, Anna; Ruvinskaya, Svetlana; Boas, David A.; Sennaroglu, Alphan; Kartner, Franz X.; Fujimoto, James G.
2009-01-01
Multi-photon microscopy (MPM) is a powerful tool for biomedical imaging, enabling molecular contrast and integrated structural and functional imaging on the cellular and subcellular level. However, the cost and complexity of femtosecond laser sources that are required in MPM are significant hurdles to widespread adoption of this important imaging modality. In this work, we describe femtosecond diode pumped Cr:LiCAF laser technology as a low cost alternative to femtosecond Ti:Sapphire lasers for MPM. Using single mode pump diodes which cost only $150 each, a diode pumped Cr:LiCAF laser generates ~70-fs duration, 1.8-nJ pulses at ~800 nm wavelengths, with a repetition rate of 100 MHz and average output power of 180 mW. Representative examples of MPM imaging in neuroscience, immunology, endocrinology and cancer research using Cr:LiCAF laser technology are presented. These studies demonstrate the potential of this laser source for use in a broad range of MPM applications. PMID:19065223
NASA Astrophysics Data System (ADS)
Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.
2017-11-01
We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.
A quantum light-emitting diode for the standard telecom window around 1,550 nm.
Müller, T; Skiba-Szymanska, J; Krysa, A B; Huwer, J; Felle, M; Anderson, M; Stevenson, R M; Heffernan, J; Ritchie, D A; Shields, A J
2018-02-28
Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.
Kwon, Osung; Ra, Young-Sik; Kim, Yoon-Ho
2009-07-20
Coherence properties of the photon pair generated via spontaneous parametric down-conversion pumped by a multi-mode cw diode laser are studied with a Mach-Zehnder interferometer. Each photon of the pair enters a different input port of the interferometer and the biphoton coherence properties are studied with a two-photon detector placed at one output port. When the photon pair simultaneously enters the interferometer, periodic recurrence of the biphoton de Broglie wave packet is observed, closely resembling the coherence properties of the pump diode laser. With non-zero delays between the photons at the input ports, biphoton interference exhibits the same periodic recurrence but the wave packet shapes are shown to be dependent on both the input delay as well as the interferometer delay. These properties could be useful for building engineered entangled photon sources based on diode laser-pumped spontaneous parametric down-conversion.
Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics
NASA Astrophysics Data System (ADS)
Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin
2017-12-01
A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.
Temperature stability of transit time delay for a single-mode fibre in a loose tube cable
NASA Technical Reports Server (NTRS)
Bergman, L. A.; Eng, S. T.; Johnston, A. R.
1983-01-01
The effect of temperature on the transit-time delay of a loose-tube-type single-mode optical-fiber cable is investigated experimentally. A 1058-m length of cable was placed loosely coiled in an oven and used to connect a 820-nm single-mode laser diode to a high-speed avalanche-photodiode detector feeding a vector voltmeter; the signal was provided by a high-stability frequency-synthesized generator. Measurements were made every 2 C from -50 to 60 C and compared to those obtained with a 200-m lacquered bare fiber. The phase change of both fibers varied with temperature at a positive slope of 6-7 ppm/C. This value is significantly better than those reported for other cable types, suggesting the application of loose-fiber cables to long-haul gigabit digital transmissions or precision time-base distribution for VLBI.
Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G
2015-12-01
Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.
Two-photon transitions driven by a combination of diode and femtosecond lasers.
Moreno, Marco P; Nogueira, Giovana T; Felinto, Daniel; Vianna, Sandra S
2012-10-15
We report on the combined action of a cw diode laser and a train of ultrashort pulses when each of them drives one step of the 5S-5P-5D two-photon transition in rubidium vapor. The fluorescence from the 6P(3/2) state is detected for a fixed repetition rate of the femtosecond laser while the cw-laser frequency is scanned over the rubidium D(2) lines. This scheme allows for a velocity selective spectroscopy in a large spectral range including the 5D(3/2) and 5D(5/2) states. The results are well described in a simplified frequency domain picture, considering the interaction of each velocity group with the cw laser and a single mode of the frequency comb.
Energy pumping in electrical circuits under avalanche noise.
Kanazawa, Kiyoshi; Sagawa, Takahiro; Hayakawa, Hisao
2014-07-01
We theoretically study energy pumping processes in an electrical circuit with avalanche diodes, where non-Gaussian athermal noise plays a crucial role. We show that a positive amount of energy (work) can be extracted by an external manipulation of the circuit in a cyclic way, even when the system is spatially symmetric. We discuss the properties of the energy pumping process for both quasistatic and finite-time cases, and analytically obtain formulas for the amounts of the work and the power. Our results demonstrate the significance of the non-Gaussianity in energetics of electrical circuits.
Reliable InP-based Geiger-mode avalanche photodiode arrays
NASA Astrophysics Data System (ADS)
Smith, Gary M.; McIntosh, K. Alex; Donnelly, Joseph P.; Funk, Joseph E.; Mahoney, Leonard J.; Verghese, Simon
2009-05-01
Arrays as large as 256 x 64 of single-photon counting avalanche photodiodes have been developed for defense applications in free-space communication and laser radar. Focal plane arrays (FPAs) sensitive to both 1.06 and 1.55 μm wavelength have been fabricated for these applications. At 240 K and 4 V overbias, the dark count rate (DCR) of 15 μm diameter devices is typically 250 Hz for 1.06 μm sensitive APDs and 1 kHz for 1.55 μm APDs. Photon detection efficiencies (PDE) at 4 V overbias are about 45% for both types of APDs. Accounting for microlens losses, the full FPA has a PDE of 30%. The reset time needed for a pixel to avoid afterpulsing at 240 K is about 3-4 μsec. These devices have been used by system groups at Lincoln Laboratory and other defense contractors for building operational systems. For these fielded systems the device reliability is a strong concern. Individual APDs as well as full arrays have been run for over 1000 hrs of accelerated testing to verify their stability. The reliability of these GM-APDs is shown to be under 10 FITs at operating temperatures of 250 K, which also corresponds to an MTTF of 17,100 yrs.
Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis
NASA Technical Reports Server (NTRS)
Davidson, Frederic; Sun, Xiaoli
1989-01-01
Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.
Test of the HAPD light sensor for the Belle II Aerogel RICH
NASA Astrophysics Data System (ADS)
Yusa, Y.; Adachi, I.; Dolenec, R.; Hayata, K.; Iori, S.; Iwata, S.; Kakuno, H.; Kataura, R.; Kawai, H.; Kindo, H.; Kobayashi, T.; Korpar, S.; Krizan, P.; Kumita, T.; Mrvar, M.; Nishida, S.; Ogawa, K.; Pestotnik, R.; Santelj, L.; Sumiyoshi, T.; Tabata, M.; Yonenaga, M.
2017-12-01
The Aerogel Ring-Imaging Cherenkov detector (ARICH) is being installed in the endcap region of Belle II spectrometer to identify particles from B meson decays by detecting the Cherenkov ring image from aerogel radiators. To detect single photons, high-sensitive photon detector which has wide effective area (∼70 mm × 70 mm), a Hybrid Avalanche Photo Detector (HAPD), has been developed in a collaboration with Hamamatsu K.K. The HAPD consists of hybrid structure of a vacuum tube and an avalanche photodiode (APD). It can be operated in 1.5 T magnetic field of the spectrometer and withstands the radiation levels expected in the Belle II experiment. There are two steps of electric pulse amplification: acceleration of photo-electron in electric field in the vacuum tube part and electron avalanche in the APD part resulting in total gain of order 105. For the ARICH, we use 420 HAPDs in total. Before installing them, we performed quality assessment studies such as measurements of dark current, noise level, signal-to-noise ratio and two-dimensional scan with laser illumination. We also measured quantum efficiency of the photocathode. During the HAPD performance tests in the magnetic field, we observed very large signal pulses which cause long dead time of the readout electronics in some of the HAPDs. We have carried out a number of studies to understand this phenomenon, and have found a way to mitigate it and suppress the degradation of the ARICH performance. In this report, we will show a summary of the HAPD performance and quality assessment measurements including validation in the magnetic field for all of the HAPDs manufactured for the ARICH in the Belle II.
Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA
NASA Astrophysics Data System (ADS)
Beck, Jeff; Woodall, Milton; Scritchfield, Richard; Ohlson, Martha; Wood, Lewis; Mitra, Pradip; Robinson, Jim
2007-04-01
The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 μm band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 μm, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 μm spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 μm pitch, 4.2 μm to 5 μm cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhen, Aigong; Ma, Ping, E-mail: maping@semi.ac.cn; Zhang, Yonghui
2014-12-22
In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal couldmore » improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically.« less
Solar Power Satellite (SPS) fiber optic link assessment
NASA Technical Reports Server (NTRS)
1980-01-01
A feasibility demonstration of a 980 MHz fiber optic link for the Solar Power Satellite (SPS) phase reference distribution system was accomplished. A dual fiber-optic link suitable for a phase distribution frequency of 980 MHz was built and tested. The major link components include single mode injection laser diodes, avalanche photodiodes, and multimode high bandwidth fibers. Signal throughput was demonstrated to be stable and of high quality in all cases. For a typical SPS link length of 200 meters, the transmitted phase at 980 MHz varies approximately 2.5 degrees for every deg C of fiber temperature change. This rate is acceptable because of the link length compensation feature of the phase control design.
NASA Astrophysics Data System (ADS)
Amouroux, Marine; Uhring, Wilfried; Pebayle, Thierry; Poulet, Patrick; Marlier, Luc
2009-07-01
Continuous wave Near InfraRed Spectroscopy (NIRS) has been used successfully in clinical environments for several years to detect cerebral activation thanks to oxymetry (i.e. absorption of photons by oxy- and deoxy- hemoglobin) measurement. The goal of our group is to build a clinically-adapted time-resolved NIRS setup i.e. a setup that is compact and robust enough to allow bedside measurements and that matches safety requirements with human patients applications. Indeed our group has already shown that time resolution allows spatial resolution and improves sensitivity of cerebral activation detection. The setup is built with four laser diodes (excitation wavelengths: 685, 780, 830 and 870 nm) whose emitted light is injected into four optical fibers; detection of reflected photons is made through an avalanche photodiode and a high resolution timing module used to record Temporal Point Spread Functions (TPSF). Validation of the device was made using cylindrically-chaped phantoms with absorbing and/or scattering inclusions. Results show that recorded TPSF are typical both of scattering and absorbing materials thus demonstrating that our apparatus would detect variation of optical properties (absorption and scattering) deep within a diffusive media just like a cerebral activation represents a rise of absorption in the cortex underneath head surface.
Quantum interference of electrically generated single photons from a quantum dot.
Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J
2010-07-09
Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.
Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste
2013-09-09
We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.
Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla
2009-08-01
Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.
Single-photon technique for the detection of periodic extraterrestrial laser pulses.
Leeb, W R; Poppe, A; Hammel, E; Alves, J; Brunner, M; Meingast, S
2013-06-01
To draw humankind's attention to its existence, an extraterrestrial civilization could well direct periodic laser pulses toward Earth. We developed a technique capable of detecting a quasi-periodic light signal with an average of less than one photon per pulse within a measurement time of a few tens of milliseconds in the presence of the radiation emitted by an exoplanet's host star. Each of the electronic events produced by one or more single-photon avalanche detectors is tagged with precise time-of-arrival information and stored. From this we compute a histogram displaying the frequency of event-time differences in classes with bin widths on the order of a nanosecond. The existence of periodic laser pulses manifests itself in histogram peaks regularly spaced at multiples of the-a priori unknown-pulse repetition frequency. With laser sources simulating both the pulse source and the background radiation, we tested a detection system in the laboratory at a wavelength of 850 nm. We present histograms obtained from various recorded data sequences with the number of photons per pulse, the background photons per pulse period, and the recording time as main parameters. We then simulated a periodic signal hypothetically generated on a planet orbiting a G2V-type star (distance to Earth 500 light-years) and show that the technique is capable of detecting the signal even if the received pulses carry as little as one photon on average on top of the star's background light.
On-chip optical diode based on silicon photonic crystal heterojunctions.
Wang, Chen; Zhou, Chang-Zhu; Li, Zhi-Yuan
2011-12-19
Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes with wavelength-scale size using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu
Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, wemore » generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.« less
NASA Astrophysics Data System (ADS)
Savanier, Marc; Mookherjea, Shayan
2016-06-01
Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.
Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers
NASA Technical Reports Server (NTRS)
Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.
2001-01-01
Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
McEwan, T.E.
1993-12-28
An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shock wave diode, which increases and sharpens the pulse even more. 5 figures.
McEwan, Thomas E.
1993-01-01
An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shockwave diode, which increases and sharpens the pulse even more.
NASA Astrophysics Data System (ADS)
Kinnischtzke, Laura A.
We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.
High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.
Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S
2016-08-22
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol
DOE Office of Scientific and Technical Information (OSTI.GOV)
Molotkov, S. N.
2008-07-15
In real fiber-optic quantum cryptography systems, the avalanche photodiodes are not perfect, the source of quantum states is not a single-photon one, and the communication channel is lossy. For these reasons, key distribution is impossible under certain conditions for the system parameters. A simple analysis is performed to find relations between the parameters of real cryptography systems and the length of the quantum channel that guarantee secure quantum key distribution when the eavesdropper's capabilities are limited only by fundamental laws of quantum mechanics while the devices employed by the legitimate users are based on current technologies. Critical values are determinedmore » for the rate of secure real-time key generation that can be reached under the current technology level. Calculations show that the upper bound on channel length can be as high as 300 km for imperfect photodetectors (avalanche photodiodes) with present-day quantum efficiency ({eta} {approx} 20%) and dark count probability (p{sub dark} {approx} 10{sup -7})« less
Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol
NASA Astrophysics Data System (ADS)
Molotkov, S. N.
2008-07-01
In real fiber-optic quantum cryptography systems, the avalanche photodiodes are not perfect, the source of quantum states is not a single-photon one, and the communication channel is lossy. For these reasons, key distribution is impossible under certain conditions for the system parameters. A simple analysis is performed to find relations between the parameters of real cryptography systems and the length of the quantum channel that guarantee secure quantum key distribution when the eavesdropper’s capabilities are limited only by fundamental laws of quantum mechanics while the devices employed by the legitimate users are based on current technologies. Critical values are determined for the rate of secure real-time key generation that can be reached under the current technology level. Calculations show that the upper bound on channel length can be as high as 300 km for imperfect photodetectors (avalanche photodiodes) with present-day quantum efficiency (η ≈ 20%) and dark count probability ( p dark ˜ 10-7).
NASA Astrophysics Data System (ADS)
Ardanuy, Antoni; Comerón, Adolfo
2018-04-01
We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.
Review of GaN-based devices for terahertz operation
NASA Astrophysics Data System (ADS)
Ahi, Kiarash
2017-09-01
GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.
WDM Nanoscale Laser Diodes for Si Photonic Interconnects
2016-07-25
mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION
NASA Tech Briefs, September 2010
NASA Technical Reports Server (NTRS)
2010-01-01
Topics covered include: Instrument for Measuring Thermal Conductivity of Materials at Low Temperatures; Multi-Axis Accelerometer Calibration System; Pupil Alignment Measuring Technique and Alignment Reference for Instruments or Optical Systems; Autonomous System for Monitoring the Integrity of Composite Fan Housings; A Safe, Self-Calibrating, Wireless System for Measuring Volume of Any Fuel at Non-Horizontal Orientation; Adaptation of the Camera Link Interface for Flight-Instrument Applications; High-Performance CCSDS Encapsulation Service Implementation in FPGA; High-Performance CCSDS AOS Protocol Implementation in FPGA; Advanced Flip Chips in Extreme Temperature Environments; Diffuse-Illumination Systems for Growing Plants; Microwave Plasma Hydrogen Recovery System; Producing Hydrogen by Plasma Pyrolysis of Methane; Self-Deployable Membrane Structures; Reactivation of a Tin-Oxide-Containing Catalys; Functionalization of Single-Wall Carbon Nanotubes by Photo-Oxidation; Miniature Piezoelectric Macro-Mass Balance; Acoustic Liner for Turbomachinery Applications; Metering Gas Strut for Separating Rocket Stages; Large-Flow-Area Flow-Selective Liquid/Gas Separator; Counterflowing Jet Subsystem Design; Water Tank with Capillary Air/Liquid Separation; True Shear Parallel Plate Viscometer; Focusing Diffraction Grating Element with Aberration Control; Universal Millimeter-Wave Radar Front End; Mode Selection for a Single-Frequency Fiber Laser; Qualification and Selection of Flight Diode Lasers for Space Applications; Plenoptic Imager for Automated Surface Navigation; Maglev Facility for Simulating Variable Gravity; Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection; High-Speed Operation of Interband Cascade Lasers; 3D GeoWall Analysis System for Shuttle External Tank Foreign Object Debris Events; Charge-Spot Model for Electrostatic Forces in Simulation of Fine Particulates; Hidden Statistics Approach to Quantum Simulations; Reconstituted Three-Dimensional Interactive Imaging; Determining Atmospheric-Density Profile of Titan; Digital Microfluidics Sample Analyzer; Radiation Protection Using Carbon Nanotube Derivatives; Process to Selectively Distinguish Viable from Non-Viable Bacterial Cells; and TEAMS Model Analyzer.
A single blue nanorod light emitting diode.
Hou, Y; Bai, J; Smith, R; Wang, T
2016-05-20
We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.
Wang, Baoju; Zhan, Qiuqiang; Zhao, Yuxiang; Wu, Ruitao; Liu, Jing; He, Sailing
2016-01-25
Further development of multiphoton microscopic imaging is confronted with a number of limitations, including high-cost, high complexity and relatively low spatial resolution due to the long excitation wavelength. To overcome these problems, for the first time, we propose visible-to-visible four-photon ultrahigh resolution microscopic imaging by using a common cost-effective 730-nm laser diode to excite the prepared Nd(3+)-sensitized upconversion nanoparticles (Nd(3+)-UCNPs). An ordinary multiphoton scanning microscope system was built using a visible CW diode laser and the lateral imaging resolution as high as 161-nm was achieved via the four-photon upconversion process. The demonstrated large saturation excitation power for Nd(3+)-UCNPs would be more practical and facilitate the four-photon imaging in the application. A sample with fine structure was imaged to demonstrate the advantages of visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals. Combining the uniqueness of UCNPs, the proposed visible-to-visible four-photon imaging would be highly promising and attractive in the field of multiphoton imaging.
Multimode entanglement assisted QKD through a free-space maritime channel
NASA Astrophysics Data System (ADS)
Gariano, John; Djordjevic, Ivan B.
2017-10-01
When using quantum key distribution (QKD), one of the trade-offs for security is that the generation rate of a secret key is typically very low. Recent works have shown that using a weak coherent source allows for higher secret key generation rates compared to an entangled photon source, when a channel with low loss is considered. In most cases, the system that is being studied is over a fiber-optic communication channel. Here a theoretical QKD system using the BB92 protocol and entangled photons over a free-space maritime channel with multiple spatial modes is presented. The entangled photons are generated from a spontaneous parametric down conversion (SPDC) source of type II. To employ multiple spatial modes, the transmit apparatus will contain multiple SPDC sources, all driven by the pump lasers assumed to have the same intensity. The receive apparatuses will contain avalanche photo diodes (APD), modeled based on the NuCrypt CPDS-1000 detector, and located at the focal point of the receive aperture lens. The transmitter is assumed to be located at Alice and Bob will be located 30 km away, implying no channel crosstalk will be introduced in the measurements at Alice's side due to turbulence. To help mitigate the effects of atmospheric turbulence, adaptive optics will be considered at the transmitter and the receiver. An eavesdropper, Eve, is located 15 km from Alice and has no control over the devices at Alice or Bob. Eve is performing the intercept resend attack and listening to the communication over the public channel. Additionally, it is assumed that Eve can correct any aberrations caused by the atmospheric turbulence to determine which source the photon was transmitted from. One, four and nine spatial modes are considered with and without applying adaptive optics and compared to one another.
Alecu, R; Loomis, T; Alecu, J; Ochran, T
1999-01-01
Semiconductor diodes offer many advantages for clinical dosimetry: high sensitivity, real-time readout, simple instrumentation, robustness and air pressure independence. The feasibility and usefulness of in vivo dosimetry with diodes has been shown by numerous publications, but very few, if any, refer to the utilization of diodes in electron beam dosimetry. The purpose of this paper is to present our methods for implementing an effective IVD program for external beam therapy with photons and electrons and to evaluate a new type of diodes. Methods of deciding on reasonable action levels along with calibration procedures, established according to the type of measurements intended to be performed and the action limits, are discussed. Correction factors to account for nonreference clinical conditions for new types of diodes (designed for photon and electron beams) are presented and compared with those required by older models commercially available. The possibilities and limitations of each type of diode are presented, emphasizing the importance of using the appropriate diode for each task and energy range.
NASA Astrophysics Data System (ADS)
Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo
2014-05-01
This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.
Multi-dimensional spatial light communication made with on-chip InGaN photonic integration
NASA Astrophysics Data System (ADS)
Yang, Yongchao; Zhu, Bingcheng; Shi, Zheng; Wang, Jinyuan; Li, Xin; Gao, Xumin; Yuan, Jialei; Li, Yuanhang; Jiang, Yan; Wang, Yongjin
2017-04-01
Here, we propose, fabricate and characterize suspended photonic integration of InGaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide and InGaN MQW-photodetector on a single chip. The unique light emission property of InGaN MQW-LED makes it feasible to establish multi-dimensional spatial data transmission using visible light. The in-plane light communication system is comprised of InGaN MQW-LED, waveguide and InGaN MQW-photodetector, and the out-of-plane data transmission is realized by detecting the free-space light emission via a commercial photodiode module. Moreover, a full-duplex light communication is experimentally demonstrated at a data transmission rate of 50 Mbps when both InGaN MQW-diodes operate under simultaneous light emission and detection mode. The in-plane superimposed signals are able to be extracted through the self-interference cancellation method, and the out-of-plane superimposed signals are in good agreement with the calculated signals according to the extracted transmitted signals. These results are promising for the development of on-chip InGaN photonic integration for diverse applications.
Evaluation of a satellite laser ranging technique using pseudonoise code modulated laser diodes
NASA Technical Reports Server (NTRS)
Ball, Carolyn Kay
1987-01-01
Several types of Satellite Laser Ranging systems exist, operating with pulsed, high-energy lasers. The distance between a ground point and an orbiting satellite can be determined to within a few centimeters. A new technique substitutes pseudonoise code modulated laser diodes, which are much more compact, reliable and less costly, for the lasers now used. Since laser diode technology is only now achieving sufficiently powerful lasers, the capabilities of the new technique are investigated. Also examined are the effects of using an avalanche photodiode detector instead of a photomultiplier tube. The influence of noise terms (including background radiation, detector dark and thermal noise and speckle) that limit the system range and performance is evaluated.
High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...
2016-08-09
Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less
Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo
2012-02-07
Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.
Vizkelethy, G.; King, M. P.; Aktas, O.; ...
2016-12-02
Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vizkelethy, G.; King, M. P.; Aktas, O.
Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode
2011-11-15
nanocavity laser with world record low threshold of 208 nW based on a lateral p-i-n junction defined by ion implantation in gallium arsenide6. This...recombination effects are mini- mized. In contrast, at room temperature, thermal excitation of car- riers depopulates the quantum dots much quicker than does Pur
Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes
NASA Astrophysics Data System (ADS)
Collins, X.; Craig, A. P.; Roblin, T.; Marshall, A. R. J.
2018-01-01
We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients indicate that an avalanche photodiode not only can be designed to be a function in the mid-wave infrared but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.
2016-04-15
The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.
NASA Astrophysics Data System (ADS)
Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.
2016-04-01
The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.
NASA Astrophysics Data System (ADS)
Wilson, Jeffrey D.; Chaffee, Dalton W.; Wilson, Nathaniel C.; Lekki, John D.; Tokars, Roger P.; Pouch, John J.; Roberts, Tony D.; Battle, Philip R.; Floyd, Bertram; Lind, Alexander J.; Cavin, John D.; Helmick, Spencer R.
2016-09-01
A high generation rate photon-pair source using a dual element periodically-poled potassium titanyl phosphate (PP KTP) waveguide is described. The fully integrated photon-pair source consists of a 1064-nm pump diode laser, fiber-coupled to a dual element waveguide within which a pair of 1064-nm photons are up-converted to a single 532-nm photon in the first stage. In the second stage, the 532-nm photon is down-converted to an entangled photon-pair at 800 nm and 1600 nm which are fiber-coupled at the waveguide output. The photon-pair source features a high pair generation rate, a compact power-efficient package, and continuous wave (CW) or pulsed operation. This is a significant step towards the long term goal of developing sources for high-rate Quantum Key Distribution (QKD) to enable Earth-space secure communications. Characterization and test results are presented. Details and preliminary results of a laboratory free space QKD experiment with the B92 protocol are also presented.
NASA Technical Reports Server (NTRS)
Wilson, Jeffrey D.; Chaffee, Dalton W.; Wilson, Nathaniel C.; Lekki, John D.; Tokars, Roger P.; Pouch, John J.; Roberts, Tony D.; Battle, Philip; Floyd, Bertram M.; Lind, Alexander J.;
2016-01-01
A high generation rate photon-pair source using a dual element periodically-poled potassium titanyl phosphate (PP KTP) waveguide is described. The fully integrated photon-pair source consists of a 1064-nanometer pump diode laser, fiber-coupled to a dual element waveguide within which a pair of 1064-nanometer photons are up-converted to a single 532-nanometer photon in the first stage. In the second stage, the 532-nanometer photon is down-converted to an entangled photon-pair at 800 nanometer and 1600 nanometer which are fiber-coupled at the waveguide output. The photon-pair source features a high pair generation rate, a compact power-efficient package, and continuous wave (CW) or pulsed operation. This is a significant step towards the long term goal of developing sources for high-rate Quantum Key Distribution (QKD) to enable Earth-space secure communications. Characterization and test results are presented. Details and preliminary results of a laboratory free-space QKD experiment with the B92 protocol are also presented.
Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.
Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J
2018-04-01
Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.
Minozzi, M; Bonora, S; Sergienko, A V; Vallone, G; Villoresi, P
2013-02-15
We present an efficient method for optimizing the spatial profile of entangled-photon wave function produced in a spontaneous parametric down conversion process. A deformable mirror that modifies a wavefront of a 404 nm CW diode laser pump interacting with a nonlinear β-barium borate type-I crystal effectively controls the profile of the joint biphoton function. The use of a feedback signal extracted from the biphoton coincidence rate is used to achieve the optimal wavefront shape. The optimization of the two-photon coupling into two, single spatial modes for correlated detection is used for a practical demonstration of this physical principle.
NASA Technical Reports Server (NTRS)
2008-01-01
Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.
NASA Astrophysics Data System (ADS)
Burri, Samuel; Homulle, Harald; Bruschini, Claudio; Charbon, Edoardo
2016-04-01
LinoSPAD is a reconfigurable camera sensor with a 256×1 CMOS SPAD (single-photon avalanche diode) pixel array connected to a low cost Xilinx Spartan 6 FPGA. The LinoSPAD sensor's line of pixels has a pitch of 24 μm and 40% fill factor. The FPGA implements an array of 64 TDCs and histogram engines capable of processing up to 8.5 giga-photons per second. The LinoSPAD sensor measures 1.68 mm×6.8 mm and each pixel has a direct digital output to connect to the FPGA. The chip is bonded on a carrier PCB to connect to the FPGA motherboard. 64 carry chain based TDCs sampled at 400 MHz can generate a timestamp every 7.5 ns with a mean time resolution below 25 ps per code. The 64 histogram engines provide time-of-arrival histograms covering up to 50 ns. An alternative mode allows the readout of 28 bit timestamps which have a range of up to 4.5 ms. Since the FPGA TDCs have considerable non-linearity we implemented a correction module capable of increasing histogram linearity at real-time. The TDC array is interfaced to a computer using a super-speed USB3 link to transfer over 150k histograms per second for the 12.5 ns reference period used in our characterization. After characterization and subsequent programming of the post-processing we measure an instrument response histogram shorter than 100 ps FWHM using a strong laser pulse with 50 ps FWHM. A timing resolution that when combined with the high fill factor makes the sensor well suited for a wide variety of applications from fluorescence lifetime microscopy over Raman spectroscopy to 3D time-of-flight.
Chen, Zhen; Wong, Carlaton; Lubner, Sean; Yee, Shannon; Miller, John; Jang, Wanyoung; Hardin, Corey; Fong, Anthony; Garay, Javier E.; Dames, Chris
2014-01-01
A thermal diode is a two-terminal nonlinear device that rectifies energy carriers (for example, photons, phonons and electrons) in the thermal domain, the heat transfer analogue to the familiar electrical diode. Effective thermal rectifiers could have an impact on diverse applications ranging from heat engines to refrigeration, thermal regulation of buildings and thermal logic. However, experimental demonstrations have lagged far behind theoretical proposals. Here we present the first experimental results for a photon thermal diode. The device is based on asymmetric scattering of ballistic energy carriers by pyramidal reflectors. Recent theoretical work has predicted that this ballistic mechanism also requires a nonlinearity in order to yield asymmetric thermal transport, a requirement of all thermal diodes arising from the second Law of Thermodynamics, and realized here using an ‘inelastic thermal collimator’ element. Experiments confirm both effects: with pyramids and collimator the thermal rectification is 10.9±0.8%, while without the collimator no rectification is detectable (<0.3%). PMID:25399761
Geiger-mode APD camera system for single-photon 3D LADAR imaging
NASA Astrophysics Data System (ADS)
Entwistle, Mark; Itzler, Mark A.; Chen, Jim; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir
2012-06-01
The unparalleled sensitivity of 3D LADAR imaging sensors based on single photon detection provides substantial benefits for imaging at long stand-off distances and minimizing laser pulse energy requirements. To obtain 3D LADAR images with single photon sensitivity, we have demonstrated focal plane arrays (FPAs) based on InGaAsP Geiger-mode avalanche photodiodes (GmAPDs) optimized for use at either 1.06 μm or 1.55 μm. These state-of-the-art FPAs exhibit excellent pixel-level performance and the capability for 100% pixel yield on a 32 x 32 format. To realize the full potential of these FPAs, we have recently developed an integrated camera system providing turnkey operation based on FPGA control. This system implementation enables the extremely high frame-rate capability of the GmAPD FPA, and frame rates in excess of 250 kHz (for 0.4 μs range gates) can be accommodated using an industry-standard CameraLink interface in full configuration. Real-time data streaming for continuous acquisition of 2 μs range gate point cloud data with 13-bit time-stamp resolution at 186 kHz frame rates has been established using multiple solid-state storage drives. Range gate durations spanning 4 ns to 10 μs provide broad operational flexibility. The camera also provides real-time signal processing in the form of multi-frame gray-scale contrast images and single-frame time-stamp histograms, and automated bias control has been implemented to maintain a constant photon detection efficiency in the presence of ambient temperature changes. A comprehensive graphical user interface has been developed to provide complete camera control using a simple serial command set, and this command set supports highly flexible end-user customization.
Modeling silicon diode energy response factors for use in therapeutic photon beams.
Eklund, Karin; Ahnesjö, Anders
2009-10-21
Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.
Noise characterization of a 512×16 spad line sensor for time-resolved spectroscopy applications
NASA Astrophysics Data System (ADS)
Finlayson, Neil; Usai, Andrea; Erdogan, Ahmet T.; Henderson, Robert K.
2018-02-01
Time-resolved spectroscopy in the presence of noise is challenging. We have developed a new 512 pixel line sensor with 16 single-photon-avalanche (SPAD) detectors per pixel and ultrafast in-pixel time-correlated single photon counting (TCSPC) histogramming for such applications. SPADs are near shot noise limited detectors but we are still faced with the problem of high dark count rate (DCR) SPADs. The noisiest SPADs can be switched off to optimise signal-to-noiseratios (SNR) at the expense of longer acquisition/exposure times than would be possible if more SPADs were exploited. Here we present detailed noise characterization of our array. We build a DCR map for the sensor and demonstrate the effect of switching off the noisiest SPADs in each pixel. 24% percent of SPADs in the array are measured to have DCR in excess of 1kHz, while the best SPAD selection per pixel reduces DCR to 53+/-7Hz across the entire array. We demonstrate that selection of the lowest DCR SPAD in each pixel leads to the emergence of sparse spatial sampling noise in the sensor.
Solar Temporal Photon Bunching
NASA Astrophysics Data System (ADS)
Tan, Peng Kian
2018-04-01
Conventional ground-based astronomical observations suffer from image distortion due to atmospheric turbulence. Light from thermal blackbody radiators such as stars exhibits photon bunching behaviour at sufficiently short time-scales which should be independent from atmospherically induced phase fluctuations. However, this photon bunching signal is difficult to observe directly with available detector bandwidths. By performing narrowband spectral filtering on Sunlight and conducting temporal intensity interferometry using actively quenched avalanche photon detectors (APDs), the Solar g(2)(tau) signature was directly measured, consistently throughout the day despite fluctuating weather conditions, cloud cover and elevation angle.
Evaluation of the Gafchromic{sup Registered-Sign} EBT2 film for the dosimetry of radiosurgical beams
DOE Office of Scientific and Technical Information (OSTI.GOV)
Larraga-Gutierrez, Jose M.; Garcia-Hernandez, Diana; Garcia-Garduno, Olivia A.
2012-10-15
Purpose: Radiosurgery uses small fields and high-radiation doses to treat intra- and extracranial lesions in a single session. The lack of a lateral electronic equilibrium and the presence of high-dose gradients in these fields are challenges for adequate measurements. The availability of radiation detectors with the high spatial resolution required is restricted to only a few. Stereotactic diodes and EBT radiochromic films have been demonstrated to be good detectors for small-beam dosimetry. Because the stereotactic diode is the standard measurement for the dosimetry of radiosurgical beams, the goal of this work was to perform measurements with the radiochromic film Gafchromic{supmore » Registered-Sign} EBT2 and compare its results with a stereotactic diode. Methods: Total scatter factors, tissue maximum, and off-axis ratios from a 6 MV small photon beams were measured using EBT2 radiochromic film in a water phantom. The film-measured data were evaluated by comparing it with the data measured with a stereotactic field diode (IBA-Dosimetry). Results: The film and diode measurements had excellent agreement. The differences between the detectors were less than or equal to 2.0% for the tissue maximum and the off-axis ratios. However, for the total scatter factors, there were significant differences, up to 4.9% (relative to the reference field), for field sizes less than 1.0 cm. Conclusions: This work found that the Gafchromic{sup Registered-Sign} EBT2 film is adequate for small photon beam measurements, particularly for tissue maximum and off-axis ratios. However, careful attention must be taken when measuring output factors of small beams below 1.0 cm due to the film's energy dependence. The measurement differences may be attributable to the film's active layer composition because EBT2 incorporates higher Z elements (i.e., bromide and potassium), hence revealing a potential energy dependence for the dosimetry of small photon beams.« less
Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si
NASA Astrophysics Data System (ADS)
Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko
2016-04-01
A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.
NASA Astrophysics Data System (ADS)
Matthews, John A.; Owen, Geraint; McEwen, Lindsey J.; Shakesby, Richard A.; Hill, Jennifer L.; Vater, Amber E.; Ratcliffe, Anna C.
2017-11-01
This regional inventory and study of a globally uncommon landform type reveals similarities in form and process between craters produced by snow-avalanche and meteorite impacts. Fifty-two snow-avalanche impact craters (mean diameter 85 m, range 10-185 m) were investigated through field research, aerial photographic interpretation and analysis of topographic maps. The craters are sited on valley bottoms or lake margins at the foot of steep avalanche paths (α = 28-59°), generally with an easterly aspect, where the slope of the final 200 m of the avalanche path (β) typically exceeds 15°. Crater diameter correlates with the area of the avalanche start zone, which points to snow-avalanche volume as the main control on crater size. Proximal erosional scars ('blast zones') up to 40 m high indicate up-range ejection of material from the crater, assisted by air-launch of the avalanches and impulse waves generated by their impact into water-filled craters. Formation of distal mounds up to 12 m high of variable shape is favoured by more dispersed down-range deposition of ejecta. Key to the development of snow-avalanche impact craters is the repeated occurrence of topographically-focused snow avalanches that impact with a steep angle on unconsolidated sediment. Secondary craters or pits, a few metres in diameter, are attributed to the impact of individual boulders or smaller bodies of snow ejected from the main avalanche. The process of crater formation by low-density, low-velocity, large-volume snow flows occurring as multiple events is broadly comparable with cratering by single-event, high-density, high-velocity, small-volume projectiles such as small meteorites. Simple comparative modelling of snow-avalanche events associated with a crater of average size (diameter 85 m) indicates that the kinetic energy of a single snow-avalanche impact event is two orders of magnitude less than that of a single meteorite-impact event capable of producing a crater of similar size, which is consistent with the incremental development of snow-avalanche impact craters through the Holocene.
Active media for up-conversion diode-pumped lasers
NASA Astrophysics Data System (ADS)
Tkachuk, Alexandra M.
1996-03-01
In this work, we consider the different methods of populating the initial and final working levels of laser transitions in TR-doped crystals under the selective 'up-conversion' and 'avalanche' diode laser pumping. On the basis of estimates of the probabilities of competing non-radiative energy-transfer processes rates obtained from the experimental data and theoretical calculations, we estimated the efficiency of the up-conversion pumping and selfquenching of the upper TR3+ states excited by laser-diode emission. The effect of the host composition, dopant concentration, and temperature on the output characteristics and up-conversion processes in YLF:Er; BaY2F8:Er; BaY2F8:Er,Yb and BaY2F8:Yb,Ho are determined.
Laser damage helps the eavesdropper in quantum cryptography.
Bugge, Audun Nystad; Sauge, Sebastien; Ghazali, Aina Mardhiyah M; Skaar, Johannes; Lydersen, Lars; Makarov, Vadim
2014-02-21
We propose a class of attacks on quantum key distribution (QKD) systems where an eavesdropper actively engineers new loopholes by using damaging laser illumination to permanently change properties of system components. This can turn a perfect QKD system into a completely insecure system. A proof-of-principle experiment performed on an avalanche photodiode-based detector shows that laser damage can be used to create loopholes. After ∼1 W illumination, the detectors' dark count rate reduces 2-5 times, permanently improving single-photon counting performance. After ∼1.5 W, the detectors switch permanently into the linear photodetection mode and become completely insecure for QKD applications.
Efficient entanglement distribution over 200 kilometers.
Dynes, J F; Takesue, H; Yuan, Z L; Sharpe, A W; Harada, K; Honjo, T; Kamada, H; Tadanaga, O; Nishida, Y; Asobe, M; Shields, A J
2009-07-06
Here we report the first demonstration of entanglement distribution over a record distance of 200 km which is of sufficient fidelity to realize secure communication. In contrast to previous entanglement distribution schemes, we use detection elements based on practical avalanche photodiodes (APDs) operating in a self-differencing mode. These APDs are low-cost, compact and easy to operate requiring only electrical cooling to achieve high single photon detection efficiency. The self-differencing APDs in combination with a reliable parametric down-conversion source demonstrate that entanglement distribution over ultra-long distances has become both possible and practical. Consequently the outlook is extremely promising for real world entanglement-based communication between distantly separated parties.
Interference of Photons from a Weak Laser and a Quantum Dot
NASA Astrophysics Data System (ADS)
Ritchie, David; Bennett, Anthony; Patel, Raj; Nicoll, Christine; Shields, Andrew
2010-03-01
We demonstrate two-photon interference from two unsynchronized sources operating via different physical processes [1]. One source is spontaneous emission from the X^- state of an electrically-driven InAs/GaAs single quantum dot with μeV linewidth, the other stimulated emission from a laser with a neV linewidth. We mix the emission from these sources on a balanced non-polarising beam splitter and measure correlations in the photons that exit using Si-avalanche photodiodes and a time-correlated counting card. By periodically switching the polarisation state of the weak laser we simultaneously measure the correlation for parallel and orthogonally polarised sources, corresponding to maximum and minimum degrees of interference. When the two sources have the same intensity, a reduction in the correlation function at time zero for the case of parallel photon sources clearly indicates this interference effect. To quantify the degree of interference, we develop a theory that predicts the correlation function. Data and experiment are then compared for a range of intensity ratios. Based on this analysis we infer a wave-function overlap of 91%, which is remarkable given the fundamental differences between the two sources. [1] Bennett A. J et al Nature Physics, 5, 715--717 (2009).
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo
2014-07-07
The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCsmore » is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.« less
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.
Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K
2015-10-05
By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.
Single Photon Counting Detectors for Low Light Level Imaging Applications
NASA Astrophysics Data System (ADS)
Kolb, Kimberly
2015-10-01
This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for moderate to high flux rates where dark noise and CIC are insignificant noise sources. Research into decreasing the dark count rate of GM-APDs will lead to development of imaging arrays that are competitive for low light level imaging and spectroscopy applications in the near future.
Approaches toward a blue semiconductor laser
NASA Technical Reports Server (NTRS)
Ladany, I.
1989-01-01
Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.
2007-01-01
Metrology; (270.5290) Photon statistics. References and links 1. W. H. Louisell, A. Yariv, and A. E. Siegman , “Quantum Fluctuations and Noise in...939–941 (1981). 7. S. R. Bowman, Y. H. Shih, and C. O. Alley, “The use of Geiger mode avalanche photodiodes for precise laser ranging at very low...light levels: An experimental evaluation”, in Laser Radar Technology and Applications I, James M. Cruickshank, Robert C. Harney eds., Proc. SPIE 663
A two-stage series diode for intense large-area moderate pulsed X rays production.
Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang
2017-01-01
This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm 2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.
Fluorescence lifetime imaging system with nm-resolution and single-molecule sensitivity
NASA Astrophysics Data System (ADS)
Wahl, Michael; Rahn, Hans-Juergen; Ortmann, Uwe; Erdmann, Rainer; Boehmer, Martin; Enderlein, Joerg
2002-03-01
Fluorescence lifetime measurement of organic fluorophores is a powerful tool for distinguishing molecules of interest from background or other species. This is of interest in sensitive analysis and Single Molecule Detection (SMD). A demand in many applications is to provide 2-D imaging together with lifetime information. The method of choice is then Time-Correlated Single Photon Counting (TCSPC). We have devloped a compact system on a single PC board that can perform TCSPC at high throughput, while synchronously driving a piezo scanner holding the immobilized sample. The system allows count rates up to 3 MHz and a resolution down to 30 ps. An overall Instrument Response Function down to 300ps is achieved with inexpensive detectors and diode lasers. The board is designed for the PCI bus, permitting high throughput without loss of counts. It is reconfigurable to operate in different modes. The Time-Tagged Time-Resolved (TTTR) mode permits the recording of all photon events with a real-time tag allowing data analysis with unlimited flexibility. We use the Time-Tag clock for an external piezo scanner that moves the sample. As the clock source is common for scanning and tagging, the individual photons can be matched to pixels. Demonstrating the capablities of the system we studied single molecule solutions. Lifetime imaging can be performed at high resolution with as few as 100 photons per pixel.
Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode
Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; ...
2016-12-28
The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO 2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excitemore » infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.« less
Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew
The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO 2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excitemore » infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.« less
Time-resolved non-sequential ray-tracing modelling of non-line-of-sight picosecond pulse LIDAR
NASA Astrophysics Data System (ADS)
Sroka, Adam; Chan, Susan; Warburton, Ryan; Gariepy, Genevieve; Henderson, Robert; Leach, Jonathan; Faccio, Daniele; Lee, Stephen T.
2016-05-01
The ability to detect motion and to track a moving object that is hidden around a corner or behind a wall provides a crucial advantage when physically going around the obstacle is impossible or dangerous. One recently demonstrated approach to achieving this goal makes use of non-line-of-sight picosecond pulse laser ranging. This approach has recently become interesting due to the availability of single-photon avalanche diode (SPAD) receivers with picosecond time resolution. We present a time-resolved non-sequential ray-tracing model and its application to indirect line-of-sight detection of moving targets. The model makes use of the Zemax optical design programme's capabilities in stray light analysis where it traces large numbers of rays through multiple random scattering events in a 3D non-sequential environment. Our model then reconstructs the generated multi-segment ray paths and adds temporal analysis. Validation of this model against experimental results is shown. We then exercise the model to explore the limits placed on system design by available laser sources and detectors. In particular we detail the requirements on the laser's pulse energy, duration and repetition rate, and on the receiver's temporal response and sensitivity. These are discussed in terms of the resulting implications for achievable range, resolution and measurement time while retaining eye-safety with this technique. Finally, the model is used to examine potential extensions to the experimental system that may allow for increased localisation of the position of the detected moving object, such as the inclusion of multiple detectors and/or multiple emitters.
Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo
2012-01-01
Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. PMID:22314357
Multiwavelength L-band fiber laser with bismuth-oxide EDF and photonic crystal fiber
NASA Astrophysics Data System (ADS)
Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Abu Bakar, M. H.; Mahdi, M. A.
2011-05-01
A multiwavelength laser comb using a bismuth-based erbium-doped fiber and 50 m photonic crystal fiber is demonstrated in a ring cavity configuration. The fiber laser is solely pumped by a single 1455 nm Raman pump laser to exploit its higher power delivery compared to that of a single-mode laser diode pump. At 264 mW Raman pump power and 1 mW Brillouin pump power, 38 output channels in the L-band have been realized with an optical signal-to-noise ratio above 15 dB and a Stokes line spacing of 0.08 nm. The laser exhibits a tuning range of 12 nm and produces stable Stokes lines across the tuning range between Brillouin pump wavelengths of 1603 nm and 1615 nm.
High power diode lasers emitting from 639 nm to 690 nm
NASA Astrophysics Data System (ADS)
Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.
2014-03-01
There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.
Semiconductor radiation detector with internal gain
DOE Office of Scientific and Technical Information (OSTI.GOV)
Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas
An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.
NASA Astrophysics Data System (ADS)
Woodbury, Daniel; Wahlstrand, Jared; Goers, Andy; Feder, Linus; Miao, Bo; Hine, George; Salehi, Fatholah; Milchberg, Howard
2016-10-01
We report on the use of single-shot supercontinuum spectral interferometry (SSSI) to make temporally and spatially resolved measurements of laser-induced avalanche breakdown in ambient air by a 200 ps pulse. By seeding the breakdown using an external 100 fs pulse, we demonstrate control over the timing and spatial characteristics of the avalanche. In addition, we calculate the collisional ionization rates at various laser intensities and demonstrate seeding of the avalanche breakdown both by multiphoton ionization and by photodetaching ions produced from a radioactive source. These observations provide proof-of-concept support for recent proposals to remotely measure radioactivity using laser-induced avalanche breakdown. This work supported by a DTRA, C-WMD Basic Research Program, and by the DOE NNSA Stewardship Science Graduate Fellowship, provided under Grant Number DE-NA0002135.
Resonant- and avalanche-ionization amplification of laser-induced plasma in air
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wu, Yue; Zhang, Zhili, E-mail: zzhang24@utk.edu; Jiang, Naibo
2014-10-14
Amplification of laser-induced plasma in air is demonstrated utilizing resonant laser ionization and avalanche ionization. Molecular oxygen in air is ionized by a low-energy laser pulse employing (2 + 1) resonance-enhanced multi-photon ionization (REMPI) to generate seed electrons. Subsequent avalanche ionization of molecular oxygen and nitrogen significantly amplifies the laser-induced plasma. In this plasma-amplification effect, three-body attachments to molecular oxygen dominate the electron-generation and -loss processes, while either nitrogen or argon acts as the third body with low electron affinity. Contour maps of the electron density within the plasma obtained in O₂/N₂ and O₂/Ar gas mixtures are provided to showmore » relative degrees of plasma amplification with respect to gas pressure and to verify that the seed electrons generated by O₂ 2 + 1 REMPI are selectively amplified by avalanche ionization of molecular nitrogen in a relatively low-pressure condition (≤100 Torr). Such plasma amplification occurring in air could be useful in aerospace applications at high altitude.« less
Vardaki, Martha Z.; Matousek, Pavel; Stone, Nicholas
2016-01-01
We characterise the performance of a beam enhancing element (‘photon diode’) for use in deep Raman spectroscopy (DRS) of biological tissues. The optical component enhances the number of laser photons coupled into a tissue sample by returning escaping photons back into it at the illumination zone. The method is compatible with transmission Raman spectroscopy, a deep Raman spectroscopy concept, and its implementation leads to considerable enhancement of detected Raman photon rates. In the past, the enhancement concept was demonstrated with a variety of samples (pharmaceutical tablets, tissue, etc) but it was not systematically characterized with biological tissues. In this study, we investigate the enhancing properties of the photon diode in the transmission Raman geometry as a function of: a) the depth and b) the optical properties of tissue samples. Liquid tissue phantoms were employed to facilitate systematic variation of optical properties. These were chosen to mimic optical properties of human tissues, including breast and prostate. The obtained results evidence that a photon diode can enhance Raman signals of tissues by a maximum of × 2.4, although it can also decrease the signals created towards the back of samples that exhibit high scattering or absorption properties. PMID:27375932
Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel
NASA Astrophysics Data System (ADS)
Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.
2018-01-01
The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chofor, N; Poppe, B; Nebah, F
Purpose: In a brachytherapy photon field in water the fluence-averaged mean photon energy Em at the point of measurement correlates with the radiation quality correction factor kQ of a non water-equivalent detector. To support the experimental assessment of Em, we show that the normalized signal ratio NSR of a pair of radiation detectors, an unshielded silicon diode and a diamond detector can serve to measure quantity Em in a water phantom at a Ir-192 unit. Methods: Photon fluence spectra were computed in EGSnrc based on a detailed model of the GammaMed source. Factor kQ was calculated as the ratio ofmore » the detector's spectrum-weighted responses under calibration conditions at a 60Co unit and under brachytherapy conditions at various radial distances from the source. The NSR was investigated for a pair of a p-type unshielded silicon diode 60012 and a synthetic single crystal diamond detector 60019 (both PTW Freiburg). Each detector was positioned according to its effective point of measurement, with its axis facing the source. Lateral signal profiles were scanned under complete scatter conditions, and the NSR was determined as the quotient of the signal ratio under application conditions x and that at position r-ref = 1 cm. Results: The radiation quality correction factor kQ shows a close correlation with the mean photon energy Em. The NSR of the diode/diamond pair changes by a factor of two from 0–18 cm from the source, while Em drops from 350 to 150 keV. Theoretical and measured NSR profiles agree by ± 2 % for points within 5 cm from the source. Conclusion: In the presence of the close correlation between radiation quality correction factor kQ and photon mean energy Em, the NSR provides a practical means of assessing Em under clinical conditions. Precise detector positioning is the major challenge.« less
High-speed wavelength-division multiplexing quantum key distribution system.
Yoshino, Ken-ichiro; Fujiwara, Mikio; Tanaka, Akihiro; Takahashi, Seigo; Nambu, Yoshihiro; Tomita, Akihisa; Miki, Shigehito; Yamashita, Taro; Wang, Zhen; Sasaki, Masahide; Tajima, Akio
2012-01-15
A high-speed quantum key distribution system was developed with the wavelength-division multiplexing (WDM) technique and dedicated key distillation hardware engines. Two interferometers for encoding and decoding are shared over eight wavelengths to reduce the system's size, cost, and control complexity. The key distillation engines can process a huge amount of data from the WDM channels by using a 1 Mbit block in real time. We demonstrated a three-channel WDM system that simultaneously uses avalanche photodiodes and superconducting single-photon detectors. We achieved 12 h continuous key generation with a secure key rate of 208 kilobits per second through a 45 km field fiber with 14.5 dB loss.
Improved Fake-State Attack to the Quantum Key Distribution Systems
NASA Astrophysics Data System (ADS)
Zhang, Sheng; Wang, Jian; Tang, Chao-jing
2012-09-01
It has been showed that most commercial quantum cryptosystems are vulnerable to the fake-state attacks, which employ the loophole that the avalanche photodiodes as single photon detectors still produce detection events in the linear mode. However, previous fake-state attacks may be easily prevented by either installing a watch dog or reconfiguring the dead-time assigning component. In this paper, we present a new technique to counteract the after-pulse effect ever enhanced by the fake-state attacks, in order to lower the quantum bit error rate. Obviously, it is more difficult to detect the presented attack scheme. Indeed, it contributes to promoting of implementing a secure quantum cryptosystem in real life.
Multiband Photonic Phased-Array Antenna
NASA Technical Reports Server (NTRS)
Tang, Suning
2015-01-01
A multiband phased-array antenna (PAA) can reduce the number of antennas on shipboard platforms while offering significantly improved performance. Crystal Research, Inc., has developed a multiband photonic antenna that is based on a high-speed, optical, true-time-delay beamformer. It is capable of simultaneously steering multiple independent radio frequency (RF) beams in less than 1,000 nanoseconds. This high steering speed is 3 orders of magnitude faster than any existing optical beamformer. Unlike other approaches, this technology uses a single controlling device per operation band, eliminating the need for massive optical switches, laser diodes, and fiber Bragg gratings. More importantly, only one beamformer is needed for all antenna elements.
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites
Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Galkin, K. N.; Galkin, N. G.; Gutakovskii, A. K.
2015-01-01
By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3–4 and 15–20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2. PMID:26434582
Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode
NASA Technical Reports Server (NTRS)
Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli
2014-01-01
The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.
Towards a disposable in vivo miniature implantable fluorescence detector
NASA Astrophysics Data System (ADS)
Bellis, Stephen; Jackson, J. Carlton; Mathewson, Alan
2006-02-01
In the field of fluorescent microscopy, neuronal activity, diabetes and drug treatment are a few of the wide ranging biomedical applications that can be monitored with the use of dye markers. Historically, in-vivo fluorescent detectors consist of implantable probes coupled by optical fibre to sophisticated bench-top instrumentation. These systems typically use laser light to excite the fluorescent marker dies and using sensors, such as the photo-multiplier tube (PMT) or charge coupled devices (CCD), detect the fluorescent light that is filtered from the total excitation. Such systems are large and expensive. In this paper we highlight the first steps toward a fully implantable in-vivo fluorescence detection system. The aim is to make the detector system small, low cost and disposable. The current prototype is a hybrid platform consisting of a vertical cavity surface emitting laser (VCSEL) to provide the excitation and a filtered solid state Geiger mode avalanche photo-diode (APD) to detect the emitted fluorescence. Fluorescence detection requires measurement of extremely low levels of light so the proposed APD detectors combine the ability to count individual photons with the added advantage of being small in size. At present the exciter and sensor are mounted on a hybrid PCB inside a 3mm diameter glass tube.This is wired to external electronics, which provide quenching, photon counting and a PC interface. In this configuration, the set-up can be used for in-vitro experimentation and in-vivo analysis conducted on animals such as mice.
Experimental Implementation of a Quantum Optical State Comparison Amplifier
NASA Astrophysics Data System (ADS)
Donaldson, Ross J.; Collins, Robert J.; Eleftheriadou, Electra; Barnett, Stephen M.; Jeffers, John; Buller, Gerald S.
2015-03-01
We present an experimental demonstration of a practical nondeterministic quantum optical amplification scheme that employs two mature technologies, state comparison and photon subtraction, to achieve amplification of known sets of coherent states with high fidelity. The amplifier uses coherent states as a resource rather than single photons, which allows for a relatively simple light source, such as a diode laser, providing an increased rate of amplification. The amplifier is not restricted to low amplitude states. With respect to the two key parameters, fidelity and the amplified state production rate, we demonstrate significant improvements over previous experimental implementations, without the requirement of complex photonic components. Such a system may form the basis of trusted quantum repeaters in nonentanglement-based quantum communications systems with known phase alphabets, such as quantum key distribution or quantum digital signatures.
Marsolat, F; Tromson, D; Tranchant, N; Pomorski, M; Le Roy, M; Donois, M; Moignau, F; Ostrowsky, A; De Carlan, L; Bassinet, C; Huet, C; Derreumaux, S; Chea, M; Cristina, K; Boisserie, G; Bergonzo, P
2013-11-07
Recent developments of new therapy techniques using small photon beams, such as stereotactic radiotherapy, require suitable detectors to determine the delivered dose with a high accuracy. The dosimeter has to be as close as possible to tissue equivalence and to exhibit a small detection volume compared to the size of the irradiation field, because of the lack of lateral electronic equilibrium in small beam. Characteristics of single crystal diamond (tissue equivalent material Z = 6, high density) make it an ideal candidate to fulfil most of small beam dosimetry requirements. A commercially available Element Six electronic grade synthetic diamond was used to develop a single crystal diamond dosimeter (SCDDo) with a small detection volume (0.165 mm(3)). Long term stability was studied by irradiating the SCDDo in a (60)Co beam over 14 h. A good stability (deviation less than ± 0.1%) was observed. Repeatability, dose linearity, dose rate dependence and energy dependence were studied in a 10 × 10 cm(2) beam produced by a Varian Clinac 2100 C linear accelerator. SCDDo lateral dose profile, depth dose curve and output factor (OF) measurements were performed for small photon beams with a micro multileaf collimator m3 (BrainLab) attached to the linac. This study is focused on the comparison of SCDDo measurements to those obtained with different commercially available active detectors: an unshielded silicon diode (PTW 60017), a shielded silicon diode (Sun Nuclear EDGE), a PinPoint ionization chamber (PTW 31014) and two natural diamond detectors (PTW 60003). SCDDo presents an excellent spatial resolution for dose profile measurements, due to its small detection volume. Low energy dependence (variation of 1.2% between 6 and 18 MV photon beam) and low dose rate dependence of the SCDDo (variation of 1% between 0.53 and 2.64 Gy min(-1)) are obtained, explaining the good agreement between the SCDDo and the efficient unshielded diode (PTW 60017) in depth dose curve measurements. For field sizes ranging from 0.6 × 0.6 to 10 × 10 cm(2), OFs obtained with the SCDDo are between the OFs measured with the PinPoint ionization chamber and the Sun Nuclear EDGE diode that are known to respectively underestimate and overestimate OF values in small beam, due to the large detection volume of the chamber and the non-water equivalence of both detectors.
Realization of all-optical switch and diode via Raman gain process using a Kerr field
NASA Astrophysics Data System (ADS)
Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid
2016-08-01
The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \
Generation of heralded entanglement between distant quantum dot hole spins
NASA Astrophysics Data System (ADS)
Delteil, Aymeric
Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.
NASA Technical Reports Server (NTRS)
Prochzaka, Ivan; Kodat, Jan; Blazej, Josef; Sun, Xiaoli (Editor)
2015-01-01
We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.
Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong
2017-08-07
Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.
NASA Astrophysics Data System (ADS)
Arabshahi, S.; Majid, W.; Dwyer, J. R.; Rassoul, H.
2016-12-01
In Earth's atmosphere, runaway electrons are routinely produced from large electric fields such as occurs inside thunderclouds. Electrons run away when the average rate of energy loss in a medium is less than the average rate of energy gains from an electric field. These electrons can then produce more energetic electrons, and subsequently an avalanche of energetic electrons, through electron-electron Møller scattering with air atoms and molecules. The process is called a Relativistic Runaway Electron Avalanche (RREA). RREA also produces large flux of X-rays and gamma rays (e.g. Terrestrial Gamma Ray Flashes) through bremsstrahlung scattering. Theoretical modeling of electric fields inside dust devils [Farrel et al. 2006], and possible observation of large electrostatic discharges from Mars [Ruf et al. 2009] suggest that the electric fields could get close to the breakdown values for Mars' atmosphere, i.e. 25 kV/m. Using detailed Monte Carlo simulations, we have shown that for such electric fields it is possible to have a RREA-like mechanism also at work inside the Martian dust storms, capable of producing a large flux of gamma-ray photons. We have also shown that the resulting gamma ray photons could be detected using instruments either on the surface of Mars or on orbiting satellites.
Longitudinal density monitor for the LHC
NASA Astrophysics Data System (ADS)
Jeff, A.; Andersen, M.; Boccardi, A.; Bozyigit, S.; Bravin, E.; Lefevre, T.; Rabiller, A.; Roncarolo, F.; Welsch, C. P.; Fisher, A. S.
2012-03-01
The longitudinal density monitor (LDM) is primarily intended for the measurement of the particle population in nominally empty rf buckets. These so-called satellite or ghost bunches can cause problems for machine protection as well as influencing the luminosity calibration of the LHC. The high dynamic range of the system allows measurement of ghost bunches with as little as 0.01% of the main bunch population at the same time as characterization of the main bunches. The LDM is a single-photon counting system using visible synchrotron light. The photon detector is a silicon avalanche photodiode operated in Geiger mode, which allows the longitudinal distribution of the LHC beams to be measured with a resolution of 90 ps. Results from the LDM are presented, including a proposed method for constructing a 3-dimensional beam density map by scanning the LDM sensor in the transverse plane. In addition, we present a scheme to improve the sensitivity of the system by using an optical switching technique.
Behaviour of Belle II ARICH Hybrid Avalanche Photo-Detector in magnetic field
NASA Astrophysics Data System (ADS)
Kindo, H.; Adachi, I.; Dolenec, R.; Hataya, K.; Iori, S.; Iwata, S.; Kakuno, H.; Kataura, R.; Kawai, H.; Kobayashi, T.; Konno, T.; Korpar, S.; Kriz˘an, P.; Kumita, T.; Mrvar, M.; Nishida, S.; Ogawa, K.; Ogawa, S.; Pestotnik, R.; Šantelj, L.; Sumiyoshi, T.; Tabata, M.; Yonenaga, M.; Yusa, Y.
2017-12-01
The proximity-focusing Aerogel Ring-Imaging Cherenkov detector (ARICH) has been designed to separate kaons from pions in the forward end-cap of the Belle II spectrometer. The detector will be placed in 1.5 T magnetic field and must have immunity to it. In ARICH R&D, we solve the problem with new equipment called Hybrid Avalanche Photo-Detector (HAPD) which developed by Hamamatsu Photonics. Recently the production of about 500 HAPDs was completed. We test HAPDs in magnetic field in KEK. We found some HAPDs have significant amount of dead time, which reaches up to 30% in the worst case. The dead time is caused by very large (more than 10,000 times larger than a single photon signal) and frequent (∼5 Hz) signals, which make electronics paralysed. The huge signals are observed in about 30% of HAPDs. To identify the origin and understand the mechanism, we perform some extra test of HAPDs. We find a strange dependence of the huge signals to the APD bias voltage. If we reduce the bias voltage applied to one of the 4 APDs by 10 V, the frequency of the huge signals is much reduced. On the other hand, if we reduce the voltage of all the 4 HAPDs, huge signals do not decrease, or even increase in some case. We also find the huge signals seems to be related to the vacuum inside HAPD. We present about the observation of the huge signals of HAPDs in the magnetic field, and our strategy to manage it.
A new CMOS SiGeC avalanche photo-diode pixel for IR sensing
NASA Astrophysics Data System (ADS)
Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.
2009-05-01
Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.
Solid-state image sensor with focal-plane digital photon-counting pixel array
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)
1995-01-01
A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.
Coupled particle-in-cell and Monte Carlo transport modeling of intense radiographic sources
NASA Astrophysics Data System (ADS)
Rose, D. V.; Welch, D. R.; Oliver, B. V.; Clark, R. E.; Johnson, D. L.; Maenchen, J. E.; Menge, P. R.; Olson, C. L.; Rovang, D. C.
2002-03-01
Dose-rate calculations for intense electron-beam diodes using particle-in-cell (PIC) simulations along with Monte Carlo electron/photon transport calculations are presented. The electromagnetic PIC simulations are used to model the dynamic operation of the rod-pinch and immersed-B diodes. These simulations include algorithms for tracking electron scattering and energy loss in dense materials. The positions and momenta of photons created in these materials are recorded and separate Monte Carlo calculations are used to transport the photons to determine the dose in far-field detectors. These combined calculations are used to determine radiographer equations (dose scaling as a function of diode current and voltage) that are compared directly with measured dose rates obtained on the SABRE generator at Sandia National Laboratories.
Advanced active quenching circuit for ultra-fast quantum cryptography.
Stipčević, Mario; Christensen, Bradley G; Kwiat, Paul G; Gauthier, Daniel J
2017-09-04
Commercial photon-counting modules based on actively quenched solid-state avalanche photodiode sensors are used in a wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single-photon arrival-time resolution (jitter). However, they usually do not specify the range of conditions over which these parameters are constant or present a sufficient description of the characterization process. In this work, we perform a few novel tests on two commercial detectors and identify an additional set of imperfections that must be specified to sufficiently characterize their behavior. These include rate-dependence of the dead time and jitter, detection delay shift, and "twilighting". We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the performance of a system using these devices. We explain their origin by an in-depth analysis of the active quenching process. To mitigate the effects of these imperfections, a custom-built detection system is designed using a novel active quenching circuit. Its performance is compared against two commercial detectors in a fast quantum key distribution system with hyper-entangled photons and a random number generator.
III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)
NASA Astrophysics Data System (ADS)
Ghosh, Sid
2015-08-01
Laser detection and ranging (LADAR)-based systems operating in the Near Infrared (NIR) and Short Wave Infrared (SWIR) have become popular optical sensors for remote sensing, medical, and environmental applications. Sophisticated laser-based radar and weapon systems used for long-range military and astronomical applications need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. Infrared APDs play an important role in LADAR systems by integrating the detection and gain stages in a single device. Robust silicon-APDs are limited to visible and very near infrared region (< 1 um), while InGaAs works well up to wavelengths of about 1.5um. Si APDs have low multiplication or excess noise but are limited to below 1um due very poor quantum efficiency above 0.8um. InGaAs and Ge APDs operate up to wavelengths of 1.5um but have poor multiplication or excess noise due to a low impact ionization coefficient ratio between electrons and holes. For the past several decades HgCdTe has been traditionally used in longer wavelength (> 3um) infrared photon detection applications. Recently, various research groups (including Ghosh et. al.) have reported SWIR and MWIR HgCdTe APDs on CdZnTe and Si substrates. However, HgCdTe APDs suffer from low breakdown fields due to material defects, and excess noise increases significantly at high electric fields. During the past decade, InAs/GaSb Strain Layer Superlattice (SLS) material system has emerged as a potential material for the entire infrared spectrum because of relatively easier growth, comparable absorption coefficients, lower tunneling currents and longer Auger lifetimes resulting in enhanced detectivities (D*). Band engineering in type II SLS allows us to engineer avalanche properties of electrons and holes. This is a great advantage over bulk InGaAs and HgCdTe APDs where engineering avalanche properties is not possible. The talk will discuss the evolution of superlattice based avalanche photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.
An excess noise measurement system for weak responsivity avalanche photodiodes
NASA Astrophysics Data System (ADS)
Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.
2018-06-01
A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.
Subelectron readout noise focal plane arrays for space imaging
NASA Astrophysics Data System (ADS)
Atlas, Gene; Wadsworth, Mark
2004-01-01
Readout noise levels of under 1 electron have long been a goal for the FPA community. In the quest to enhance the FPA sensitivity, various approaches have been attempted ranging from the exotic Photo-multiplier tubes, Image Intensifier tubes, Avalanche photo diodes, and now the on-chip avalanche charge amplification technologies from the CCD manufacturers. While these techniques reduce the readout noise, each offers a set of compromises that negatively affect the overall performance of the sensor in parameters such as power dissipation, dynamic range, uniformity or system complexity. In this work, we overview the benefits and tradeoffs of each approach, and introduce a new technique based on ImagerLabs" exclusive HIT technology which promises sub-electron read noise and other benefits without the tradeoffs of the other noise reduction techniques.
NASA Astrophysics Data System (ADS)
Delorme, Mathieu; Le Doussal, Pierre; Wiese, Kay Jörg
2016-05-01
The Brownian force model is a mean-field model for local velocities during avalanches in elastic interfaces of internal space dimension d , driven in a random medium. It is exactly solvable via a nonlinear differential equation. We study avalanches following a kick, i.e., a step in the driving force. We first recall the calculation of the distributions of the global size (total swept area) and of the local jump size for an arbitrary kick amplitude. We extend this calculation to the joint density of local and global sizes within a single avalanche in the limit of an infinitesimal kick. When the interface is driven by a single point, we find new exponents τ0=5 /3 and τ =7 /4 , depending on whether the force or the displacement is imposed. We show that the extension of a "single avalanche" along one internal direction (i.e., the total length in d =1 ) is finite, and we calculate its distribution following either a local or a global kick. In all cases, it exhibits a divergence P (ℓ ) ˜ℓ-3 at small ℓ . Most of our results are tested in a numerical simulation in dimension d =1 .
Frequency division multiplexed radio-over-fiber transmission using an optically injected laser diode
NASA Astrophysics Data System (ADS)
Chan, Sze-Chun
2008-04-01
Nonlinear dynamics of semiconductor lasers have recently attracted much attention in the area of microwave photonics. By invoking the nonlinear dynamics of an optically injected laser diode, high-speed microwave oscillation can be generated using the period-one oscillation state. The oscillation is harnessed for application as a photonic microwave source in radio-over-fiber (RoF) systems. It is advantageous over conventional direct current modulation because it alleviates the modulation bandwidth limitation and naturally generates single sideband signals. The method is thus applicable to wireless communication systems even when the subcarrier frequency increases to 60 GHz. Because RoF is usually incorporated with standard wireless schemes that involve frequency division multiplexing (FDM), we investigate the performance of the optical injection system under simultaneous current injection of multiple data streams. Frequency mixings and competition for locking among subcarriers result in intermodulation distortion (IMD). The relative weightings of different channels should be optimized to ensure acceptable signal qualities. The results illustrate the feasibility of applying the optical injection system for FDM RoF transmission at high subcarrier frequencies.
Liu, Zong-Yuan; Liu, Sheng; Wang, Kai; Luo, Xiao-Bing
2010-06-01
We show that research presented in Opt. Lett.34, 301 (2009)OPLEDP0146-959210.1364/OL.34.000301 applied questionable phosphor definitions and a questionable simulation procedure for light-emitting diodes. Our simulation indicates that a one-dimensional photonic crystal is beneficial for color control but cannot improve the light extraction as asserted in that Letter.
Monolithic optical link in silicon-on-insulator CMOS technology.
Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan
2017-03-06
This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.
Analysis of plasma-mediated ablation in aqueous tissue
NASA Astrophysics Data System (ADS)
Jiao, Jian; Guo, Zhixiong
2012-06-01
Plasma-mediated ablation using ultrafast lasers in transparent media such as aqueous tissues is studied. It is postulated that a critical seed free electron density exists due to the multiphoton ionization in order to trigger the avalanche ionization which causes ablation and during the avalanche ionization process the contribution of laser-induced photon ionization is negligible. Based on this assumption, the ablation process can be treated as two separate processes - the multiphoton and avalanche ionizations - at different time stages; so that an analytical solution to the evolution of plasma formation is obtained for the first time. The analysis is applied to plasma-mediated ablation in corneal epithelium and validated via comparison with experimental data available in the literature. The critical seed free-electron density and the time to initiate the avalanche ionization for sub-picosecond laser pulses are analyzed. It is found that the critical seed free-electron density decreases as the pulse width increases, obeying a tp-5.65 rule. This model is further extended to the estimation of crater size in the ablation of tissue-mimic polydimethylsiloxane (PDMS). The results match well with the available experimental measurements.
Compensation of PVT Variations in ToF Imagers with In-Pixel TDC
Vornicu, Ion; Carmona-Galán, Ricardo; Rodríguez-Vázquez, Ángel
2017-01-01
The design of a direct time-of-flight complementary metal-oxide-semiconductor (CMOS) image sensor (dToF-CIS) based on a single-photon avalanche-diode (SPAD) array with an in-pixel time-to-digital converter (TDC) must contemplate system-level aspects that affect its overall performance. This paper provides a detailed analysis of the impact of process parameters, voltage supply, and temperature (PVT) variations on the time bin of the TDC array. Moreover, the design and characterization of a global compensation loop is presented. It is based on a phase locked loop (PLL) that is integrated on-chip. The main building block of the PLL is a voltage-controlled ring-oscillator (VCRO) that is identical to the ones employed for the in-pixel TDCs. The reference voltage that drives the master VCRO is distributed to the voltage control inputs of the slave VCROs such that their multiphase outputs become invariant to PVT changes. These outputs act as time interpolators for the TDCs. Therefore the compensation scheme prevents the time bin of the TDCs from drifting over time due to the aforementioned factors. Moreover, the same scheme is used to program different time resolutions of the direct time-of-flight (ToF) imager aimed at 3D ranging or depth map imaging. Experimental results that validate the analysis are provided as well. The compensation loop proves to be remarkably effective. The spreading of the TDCs time bin is lowered from: (i) 20% down to 2.4% while the temperature ranges from 0 °C to 100 °C; (ii) 27% down to 0.27%, when the voltage supply changes within ±10% of the nominal value; (iii) 5.2 ps to 2 ps standard deviation over 30 sample chips, due to process parameters’ variation. PMID:28486405
Compensation of PVT Variations in ToF Imagers with In-Pixel TDC.
Vornicu, Ion; Carmona-Galán, Ricardo; Rodríguez-Vázquez, Ángel
2017-05-09
The design of a direct time-of-flight complementary metal-oxide-semiconductor (CMOS) image sensor (dToF-CIS) based on a single-photon avalanche-diode (SPAD) array with an in-pixel time-to-digital converter (TDC) must contemplate system-level aspects that affect its overall performance. This paper provides a detailed analysis of the impact of process parameters, voltage supply, and temperature (PVT) variations on the time bin of the TDC array. Moreover, the design and characterization of a global compensation loop is presented. It is based on a phase locked loop (PLL) that is integrated on-chip. The main building block of the PLL is a voltage-controlled ring-oscillator (VCRO) that is identical to the ones employed for the in-pixel TDCs. The reference voltage that drives the master VCRO is distributed to the voltage control inputs of the slave VCROs such that their multiphase outputs become invariant to PVT changes. These outputs act as time interpolators for the TDCs. Therefore the compensation scheme prevents the time bin of the TDCs from drifting over time due to the aforementioned factors. Moreover, the same scheme is used to program different time resolutions of the direct time-of-flight (ToF) imager aimed at 3D ranging or depth map imaging. Experimental results that validate the analysis are provided as well. The compensation loop proves to be remarkably effective. The spreading of the TDCs time bin is lowered from: (i) 20% down to 2.4% while the temperature ranges from 0 °C to 100 °C; (ii) 27% down to 0.27%, when the voltage supply changes within ±10% of the nominal value; (iii) 5.2 ps to 2 ps standard deviation over 30 sample chips, due to process parameters' variation.
Sims, Neil C; De Barro, Paul; Newnham, Glenn J; Kalyebi, Andrew; Macfadyen, Sarina; Malthus, Tim J
2018-01-01
This study examines whether leaf spectra can be used to measure damage to cassava plants from whitefly (Bemisia tabaci), and the potential to translate measurements from leaf to landscape scale in eastern Africa. Symptoms of the cassava brown streak disease (CBSD) and cassava mosaic disease (CMD) viruses, and sooty mould (SM) blackening of lower leaves from whiteflies feeding on the upper leaves, were measured at the leaf scale with a high-resolution spectroradiometer and a single photon avalanche diode (SPAD) meter, which retrieves relative chlorophyll concentration. Spectral measurements were compared to the five-level visual scores used to assess the severity of each of the three damaging agents in the field, and also to leaf chemistry data. Leaves exhibiting severe CBSD and CMD were spectrally indistinguishable from leaves without any symptoms. Severe SM was spectrally distinctive but is likely to be difficult to map because of its occurrence in the lower crown. SPAD measurements were highly correlated with most foliar chemistry measurements and field scores of disease severity. Regression models between simulated Sentinel 2 bands, field scores and SPAD measurements were strongest using wavelengths with high importance weightings in random forest models. SPAD measurements are highly correlated to many foliar chemistry parameters, and should be considered for use in mapping disease severity over larger areas. Remaining challenges for mapping relate to the subtle expression of symptoms, the spatial distribution of disease severity within fields, and the small size and complex structure of the cassava fields themselves. © 2017 The Authors. Pest Management Science published by John Wiley & Sons Ltd on behalf of Society of Chemical Industry. © 2017 The Authors. Pest Management Science published by John Wiley & Sons Ltd on behalf of Society of Chemical Industry.
NASA Astrophysics Data System (ADS)
Blacksberg, J.; Rossman, G. R.; Maruyama, Y.; Charbon, E.
2011-12-01
In situ exploration of planetary surfaces has to date required multiple techniques that, when used together, yield important information about their formation histories and evolution. We present a time-resolved laser spectroscopic technique that could potentially collect complementary sets of data providing information on mineral structure, composition, and hydration state. Using a picosecond-scale pulsed laser and a fast time-resolved detector we can simultaneously collect spectra from Raman, Laser Induced Breakdown Spectroscopy (LIBS), and fluorescence emissions that are separated in time due to the unique decay times of each process. The use of a laser with high rep rate (40 KHz) and low pulse energy (1 μJ/pulse) allows us to rapidly collect high signal to noise Raman spectra while minimizing sample damage. Increasing the pulse energy by about an order of magnitude creates a microscopic plasma near the surface and enables the collection of LIBS spectra at an unusually high rep rate and low pulse energy. Simultaneously, broader fluorescence peaks can be detected with lifetimes varying from nanosecond to microsecond. We will present Raman, LIBS, and fluorescence spectra obtained on natural mineral samples such as sulfates, clays, pyroxenes and carbonates that are of interest for Mars mineralogy. We demonstrate this technique using a photocathode-based streak camera detector as well as a newly-developed solid state Single Photon Avalanche Diode (SPAD) sensor array based on Complementary Metal-Oxide Semiconductor (CMOS) technology. We will discuss the impact of system design and detector choice on science return of a potential planetary surface mission, with a specific focus on size, weight, power, and complexity. The research described here was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration (NASA).
De Barro, Paul; Newnham, Glenn J; Kalyebi, Andrew; Macfadyen, Sarina; Malthus, Tim J
2017-01-01
Abstract BACKGROUND This study examines whether leaf spectra can be used to measure damage to cassava plants from whitefly (Bemisia tabaci), and the potential to translate measurements from leaf to landscape scale in eastern Africa. Symptoms of the cassava brown streak disease (CBSD) and cassava mosaic disease (CMD) viruses, and sooty mould (SM) blackening of lower leaves from whiteflies feeding on the upper leaves, were measured at the leaf scale with a high‐resolution spectroradiometer and a single photon avalanche diode (SPAD) meter, which retrieves relative chlorophyll concentration. Spectral measurements were compared to the five‐level visual scores used to assess the severity of each of the three damaging agents in the field, and also to leaf chemistry data. RESULTS Leaves exhibiting severe CBSD and CMD were spectrally indistinguishable from leaves without any symptoms. Severe SM was spectrally distinctive but is likely to be difficult to map because of its occurrence in the lower crown. SPAD measurements were highly correlated with most foliar chemistry measurements and field scores of disease severity. Regression models between simulated Sentinel 2 bands, field scores and SPAD measurements were strongest using wavelengths with high importance weightings in random forest models. CONCLUSION SPAD measurements are highly correlated to many foliar chemistry parameters, and should be considered for use in mapping disease severity over larger areas. Remaining challenges for mapping relate to the subtle expression of symptoms, the spatial distribution of disease severity within fields, and the small size and complex structure of the cassava fields themselves. © 2017 The Authors. Pest Management Science published by John Wiley & Sons Ltd on behalf of Society of Chemical Industry. PMID:28851022
Modeling the relativistic runaway electron avalanche and the feedback mechanism with GEANT4
Skeltved, Alexander Broberg; Østgaard, Nikolai; Carlson, Brant; Gjesteland, Thomas; Celestin, Sebastien
2014-01-01
This paper presents the first study that uses the GEometry ANd Tracking 4 (GEANT4) toolkit to do quantitative comparisons with other modeling results related to the production of terrestrial gamma ray flashes and high-energy particle emission from thunderstorms. We will study the relativistic runaway electron avalanche (RREA) and the relativistic feedback process, as well as the production of bremsstrahlung photons from runaway electrons. The Monte Carlo simulations take into account the effects of electron ionization, electron by electron (Møller), and electron by positron (Bhabha) scattering as well as the bremsstrahlung process and pair production, in the 250 eV to 100 GeV energy range. Our results indicate that the multiplication of electrons during the development of RREAs and under the influence of feedback are consistent with previous estimates. This is important to validate GEANT4 as a tool to model RREAs and feedback in homogeneous electric fields. We also determine the ratio of bremsstrahlung photons to energetic electrons Nγ/Ne. We then show that the ratio has a dependence on the electric field, which can be expressed by the avalanche time τ(E) and the bremsstrahlung coefficient α(ε). In addition, we present comparisons of GEANT4 simulations performed with a “standard” and a “low-energy” physics list both validated in the 1 keV to 100 GeV energy range. This comparison shows that the choice of physics list used in GEANT4 simulations has a significant effect on the results. Key Points Testing the feedback mechanism with GEANT4 Validating the GEANT4 programming toolkit Study the ratio of bremsstrahlung photons to electrons at TGF source altitude PMID:26167437
NASA Astrophysics Data System (ADS)
Diamanti, Eleni; Takesue, Hiroki; Langrock, Carsten; Fejer, M. M.; Yamamoto, Yoshihisa
2006-12-01
We present a quantum key distribution experiment in which keys that were secure against all individual eavesdropping attacks allowed by quantum mechanics were distributed over 100 km of optical fiber. We implemented the differential phase shift quantum key distribution protocol and used low timing jitter 1.55 µm single-photon detectors based on frequency up-conversion in periodically poled lithium niobate waveguides and silicon avalanche photodiodes. Based on the security analysis of the protocol against general individual attacks, we generated secure keys at a practical rate of 166 bit/s over 100 km of fiber. The use of the low jitter detectors also increased the sifted key generation rate to 2 Mbit/s over 10 km of fiber.
Foundry fabricated photonic integrated circuit optical phase lock loop.
Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C
2017-07-24
This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.
WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scheuermann, J; Goldan, A; Zhao, W
2014-06-15
Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITOmore » signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.« less
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
DOE Office of Scientific and Technical Information (OSTI.GOV)
Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka
Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga 2O 3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barriermore » in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga 2O 3 photodetectors.« less
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; ...
2016-03-10
Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga 2O 3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barriermore » in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga 2O 3 photodetectors.« less
NASA Astrophysics Data System (ADS)
Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke
2013-04-01
Through the Research Scholars Institute, students of Hartnell Community College experimented with the application of avalanche photodiodes (APDs) as cosmic ray detectors during the summer of 2012. An APD detector was coupled with a 10 meter long wavelength shifting fiber (WSF) wrapped around a cylindrical plastic scintillator to maximize signal detection. A photomultiplier tube (PMT) was used in conjunction to detect the same scintillation light caused by incoming cosmic rays. Two APD detectors were evaluated to confirm the viability of the setup. In addition, a similar setup was recently utilized to implement multi-pixel photon counters (MPPCs) as readout detectors. Under this configuration, a high gain preamplifier was used to amplify the signals for both the MPPC and APD detectors. We report on our results characterizing the MPPC and discuss its overall performance. Compared to the APD, our findings suggest that the MPPC detector has greater sensitivity in detecting weak light signals, and can be used in place of the PMT for certain counting applications.
NASA Technical Reports Server (NTRS)
Beers, B. L.; Pine, V. W.; Hwang, H. C.; Bloomberg, H. W.; Lin, D. L.; Schmidt, M. J.; Strickland, D. J.
1979-01-01
The model consists of four phases: single electron dynamics, single electron avalanche, negative streamer development, and tree formation. Numerical algorithms and computer code implementations are presented for the first three phases. An approach to developing a code description of fourth phase is discussed. Numerical results are presented for a crude material model of Teflon.
NASA Astrophysics Data System (ADS)
Qin, Feihu; Hu, Juntao; Wang, Huanqin; Gui, Huaqiao; Liu, Jianguo; Lü, Liang; Kong, Deyi; Zhang, Jian; Han, Xia; Wang, Tianli
2017-10-01
An all-fiber structure detection system based on single photon detection technique(SPDT) has been developed to measure the ultra-low turbidity ofliquids. To assure the measurement accuracy,the total intensity of transmission light has been detected and quantified as number of photons by avalanche photodiode (APD) which has the advantage of high sensitivity.A fresh all-fiber structure optical fiber probe based on SPDT is applied in the system to reduce the volume and fluctuation of traditional transmission-light measurement system,in which the all-fiber structure probe is used to delivery and collection of transmission light.On the basis of Beer-Lambert (B-L) transmission law,a test system has been established and carried out a series of experiments.By combining B-Llaw with the principle of SPDT,a novel model for detecting turbidity has been proposed to explain the experimental results.The results have shown a well exponential relationship over the range of 0.01-1NTU (Nephelometric Turbidity Units).It also has showna good linear relationship with a resolution as high as 0.01NTUin the range of 0.01-0.09 NTU.When it is 1 secondofthe sampling time,the mean error of measurement result can be controlled within 5% of full scale.In addition,the new detection structure proposed in this paper, which makes the system more compact and more suitable in the small special space.
Photon detector configured to employ the Gunn effect and method of use
Cich, Michael J
2015-03-17
Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu
Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies,more » since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wronski, M.; Zhao, W.; Tanioka, K.
Purpose: The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. Methods: A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and themore » results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography/fluoroscopy (R/F) applications. Results: The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all clinically relevant medical x-ray exposures. Conclusions: This work demonstrates that the HARP-DRL sensor enables the practical implementation of a SHARP solid-state x-ray sensor capable of quantum noise limited operation throughout the entire range of clinically relevant x-ray exposures. This is an important step toward the realization of a SHARP-AMFPI x-ray flat-panel imager.« less
Application of LANDSAT data to delimitation of avalanche hazards in Montane, Colorado
NASA Technical Reports Server (NTRS)
Knepper, D. H. (Principal Investigator); Ives, J. D.; Summer, R.
1976-01-01
The author has identified the following significant results. Photointerpretation of individual avalanche paths on single band black and white LANDSAT images is greatly hindered by terrain shadows and the low spatial resolution of the LANDSAT system. Maps produced in this way are biased towards the larger avalanche paths that are under the most favorable illumination conditions during imaging; other large avalanche paths, under less favorable illumination, are often not detectable and the smaller paths, even those defined by sharp trimlines, are only rarely identifiable.
Photodiode design study. Final report, May--December 1977
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lamorte, M.F.
1977-12-01
The purpose of this work was to apply the analytical method developed for single junction and multijunction solar cells, Contract No. F33615-76-C-1283, to photodiodes and avalanche photodiodes. It was anticipated that this analytical method will advance the state-of-the-art because of the following: (1) the analysis considers the total photodetector multilayer structure rather than just the depleted region; (2) a model of the complete band structure is analyzed; (3) application of the integral form of the continuity equation is used; (4) structures that reduce dark current and/or increase the ratio of photocurrent to dark current are obtained; and (5) structures thatmore » increase spectral response in the depleted region and reduce response in other regions of the diode are obtained. The integral form of the continuity equation developed for solar cells is the steady-state or time-independent form. The contract specified that the time-independent equation would only be employed to determine applicability to photodetectors. The GaAsSb photodiode under development at Rockwell International, Thousand Oaks, California was used to determine the applicability to photodetectors. The diode structure is composed of four layers grown on a substrate. The analysis presents calculations of spectral response. This parameter is used in this study to optimize the structure.« less
Multipactor experiment on a dielectric surface
NASA Astrophysics Data System (ADS)
Anderson, Rex Beach, III
2001-12-01
Multipactor is an electron multiplication process, or electron avalanche, that occurs on metallic and dielectric surfaces in the presence of rf microwave fields. Just as a rock avalanche only needs one rock to cause a larger slide of destruction, one electron under multipactor conditions can cause a tremendous amount of damage to electrical components. Multipactor is a nuisance that can cause excessive noise in communication satellites and radar, and damage to vacuum windows in particle accelerators. Single-surface multipactor on dielectrics is responsible for poor transmission properties of vacuum windows and can eventually lead to vacuum window failure. The repercussions of multipactor affect a wide range of people. For example, a civilian placing a call on a cell phone, or a captain dependent on radar for his ship's safety could both be affected by multipactor. In order to combat this expensive annoyance, a unique experiment to investigate single-surface multipactor on a dielectric surface was developed and tested. The motivation of this thesis is to introduce a novel experiment for multipactor that is designed to verify theoretical calculations and explore the physics behind the phenomenon. The compact apparatus consists of a small brass microwave cavity in a high vacuum system. Most single-surface multipactor experiments consist of a large resonant ring wave guide with a MW power supply. This experiment is the first to utilize a high Q resonant cavity and kW-level power supply to create multipactor on a dielectric surface. The small brass resonant cavity has an inner length of 9.154 cm with an inner diameter of 9.045 cm. A pulsed, variable frequency microwave source at ˜2.4 GHz, 2 kW peak excites the TE111 mode with a strong electric field parallel to a dielectric plate (˜0.2 cm thickness) that is inserted at the mid-plane of the cavity. The microwave pulses from the power supply are monitored by calibrated microwave diodes. These calibrated diodes along with a bead pull perturbation method are used to calculate the threshold rf fields at the dielectric surface when multipactor occurs. This experiment is the first to measure electron current from the dielectric using an electron probe. The electron probe provides temporal measurements of the multipactor electron current with respect to the microwave pulses. Another unique electron diagnostic utilized in this multipactor experiment is phosphor. Phosphor on the dielectric surface is used to detect multipactor electrons by photoemission. Phosphors with different excitation energies are used as a crude electron energy analyzer. Experimental results from these diagnostics match well with theoretical calculations.
Fast sub-electron detectors review for interferometry
NASA Astrophysics Data System (ADS)
Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe
2016-08-01
New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA interferometer (US) by the Lagrange laboratory from Observatoire de la Cote d'Azur. By operating the detector at gain 1000, the readout noise is as low as 0.1 e and data can be analyzed with a better contrast in photon counting mode.
NASA Astrophysics Data System (ADS)
Fathipour, Vala; Bonakdar, Alireza; Mohseni, Hooman
2016-08-01
Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time (in 2007). It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs), and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K. EI detectors have been designed, fabricated, and tested during two generations of development and optimization cycles. We review our imager results using the first-generation detectors. In the second-generation devices, the dark current is reduced by two orders of magnitude, and bandwidth is improved by 4 orders of magnitude. The dark current density of the EI detector is shown to outperform the state-of-the-art technology, the
Banerjee, Bhadrani; Tripathi, Anvita; Das, Adrija; Singh, Kumari Alka; Banerjee, J. P.
2015-01-01
The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies. PMID:27347524
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cuneo, M.E.; Menge, P.R.; Hanson, D.L.
Application of ion beams to Inertial Confinement Fusion requires efficient production, transport and focusing of an intense, low microdivergence beam of an appropriate range ion. At Sandia, the authors are studying the production of lithium ion beams in extraction applied-B ion diodes on the SABRE accelerator (5 MV, 250 kA). Evidence on both SABRE (1 TW) and PBFA-II (20 TW) indicates that the lithium beam turns off and is replaced by a beam of mostly protons and carbon, possibly due to electron thermal and stimulated desorption of hydrocarbon surface contamination with subsequent avalanche ionization. Turn-off of the lithium beam ismore » accompanied by rapid impedance collapse. Surface cleaning techniques are being developed to reduce beam contamination, increase the total lithium energy and reduce the rate of diode impedance collapse. Application of surface cleaning techniques has increased the production of lithium from passive LiF sources by a factor of 2. Improved diode electric and magnetic field profiles have increased the diode efficiency and production of lithium by a factor of 5, without surface cleaning. Work is ongoing to combine these two advances which are discussed here.« less
Light Controlling at Subwavelength Scales in Nanophotonic Systems: Physics and Applications
NASA Astrophysics Data System (ADS)
Shen, Yuecheng
The capability of controlling light at scales that are much smaller than the operating wave-length enables new optical functionalities, and opens up a wide range of applications. Such a capability is out of the realm of conventional optical approaches. This dissertation aims to explore the light-matter interactions at nanometer scale, and to investigate the novel scien-tific and industrial applications. In particular, we will explain how to detect nanoparticles using an ultra-sensitive nano-sensor; we will also describe a photonic diode which gener-ates a unidirectional flow of single photons; Moreover, in an one-dimensional waveguide QED system where the fermionic degree of freedom is present, we will show that strong photon-photon interactions can be generated through scattering means, leading to photonic bunching and anti-bunching with various applications. Finally, we will introduce a mecha-nism to achieve super-resolution to discern fine features that are orders of magnitude smaller than the illuminating wavelength. These research projects incorporate recent advances in quantum nanophotonics, nanotechnologies, imaging reconstruction techniques, and rigorous numerical simulations.
NASA Astrophysics Data System (ADS)
Ohno, M.; Kawano, T.; Edahiro, I.; Shirakawa, H.; Ohashi, N.; Okada, C.; Habata, S.; Katsuta, J.; Tanaka, Y.; Takahashi, H.; Mizuno, T.; Fukazawa, Y.; Murakami, H.; Kobayashi, S.; Miyake, K.; Ono, K.; Kato, Y.; Furuta, Y.; Murota, Y.; Okuda, K.; Wada, Y.; Nakazawa, K.; Mimura, T.; Kataoka, J.; Ichinohe, Y.; Uchida, Y.; Katsuragawa, M.; Yoneda, H.; Sato, G.; Sato, R.; Kawaharada, M.; Harayama, A.; Odaka, H.; Hayashi, K.; Ohta, M.; Watanabe, S.; Kokubun, M.; Takahashi, T.; Takeda, S.; Kinoshita, M.; Yamaoka, K.; Tajima, H.; Yatsu, Y.; Uchiyama, H.; Saito, S.; Yuasa, T.; Makishima, K.; ASTRO-H HXI/SGD Team
2016-09-01
The hard X-ray Imager and Soft Gamma-ray Detector onboard ASTRO-H demonstrate high sensitivity to hard X-ray (5-80 keV) and soft gamma-rays (60-600 keV), respectively. To reduce the background, both instruments are actively shielded by large, thick Bismuth Germanate scintillators. We have developed the signal processing system of the avalanche photodiode in the BGO active shields and have demonstrated its effectiveness after assembly in the flight model of the HXI/SGD sensor and after integration into the satellite. The energy threshold achieved is about 150 keV and anti-coincidence efficiency for cosmic-ray events is almost 100%. Installed in the BGO active shield, the developed signal processing system successfully reduces the room background level of the main detector.
Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications
NASA Astrophysics Data System (ADS)
Pellegrini, G.; Baselga, M.; Carulla, M.; Fadeyev, V.; Fernández-Martínez, P.; García, M. Fernández; Flores, D.; Galloway, Z.; Gallrapp, C.; Hidalgo, S.; Liang, Z.; Merlos, A.; Moll, M.; Quirion, D.; Sadrozinski, H.; Stricker, M.; Vila, I.
2016-09-01
This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.
Four-terminal circuit element with photonic core
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sampayan, Stephen
A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less
Selective Photophysical Modification on Light-Emitting Polymer Films for Micro- and Nano-Patterning
Zhang, Xinping; Liu, Feifei; Li, Hongwei
2016-01-01
Laser-induced cross-linking in polymeric semiconductors was utilized to achieve micro- and nano-structuring in thin films. Single- and two-photon cross-linking processes led to the reduction in both the refractive index and thickness of the polymer films. The resultant photonic structures combine the features of both relief- and phase-gratings. Selective cross-linking in polymer blend films based on different optical response of different molecular phases enabled “solidification” of the phase-separation scheme, providing a stable template for further photonic structuring. Dielectric and metallic structures are demonstrated for the fabrication methods using cross-linking in polymer films. Selective cross-linking enables direct patterning into polymer films without introducing additional fabrication procedures or additional materials. The diffraction processes of the emission of the patterned polymeric semiconductors may provide enhanced output coupling for light-emitting diodes or distributed feedback for lasers. PMID:28773248
Progress towards the development of a source of entangled photons for Space
NASA Astrophysics Data System (ADS)
Fedrizzi, Alessandro; Jennewein, Thomas; Ursin, Rupert; Zeilinger, Anton
2007-03-01
Quantum entanglement offers exciting applications like quantum computing, quantum teleportation and quantum cryptography. Ground based quantum communication schemes in optical fibres however are limited to a distance of the order of ˜100 km. In order to extend this limit to a global scale we are working on the realization of an entanglement-based quantum communication transceiver for space deployment. Here we report on a compact, extremely bright source for polarization entangled photons meeting the scientific requirements for a potential space to ground optical link. The pair production rate exceeds 4*10̂6 pairs/s at just 20mW of laser diode pump power. Furthermore, we will present the results of various experiments proving the feasibility of quantum information in space, including a weak coherent pulse single-photon downlink from a LEO satellite and the distribution of entanglement over a 144km free space link, using ESAs optical ground station.
Flexible manufacturing for photonics device assembly
NASA Technical Reports Server (NTRS)
Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David
1994-01-01
The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.
Wireless fluorescence capsule for endoscopy using single photon-based detection
NASA Astrophysics Data System (ADS)
Al-Rawhani, Mohammed A.; Beeley, James; Cumming, David R. S.
2015-12-01
Fluorescence Imaging (FI) is a powerful technique in biological science and clinical medicine. Current FI devices that are used either for in-vivo or in-vitro studies are expensive, bulky and consume substantial power, confining the technique to laboratories and hospital examination rooms. Here we present a miniaturised wireless fluorescence endoscope capsule with low power consumption that will pave the way for future FI systems and applications. With enhanced sensitivity compared to existing technology we have demonstrated that the capsule can be successfully used to image tissue autofluorescence and targeted fluorescence via fluorophore labelling of tissues. The capsule incorporates a state-of-the-art complementary metal oxide semiconductor single photon avalanche detector imaging array, miniaturised optical isolation, wireless technology and low power design. When in use the capsule consumes only 30.9 mW, and deploys very low-level 468 nm illumination. The device has the potential to replace highly power-hungry intrusive optical fibre based endoscopes and to extend the range of clinical examination below the duodenum. To demonstrate the performance of our capsule, we imaged fluorescence phantoms incorporating principal tissue fluorophores (flavins) and absorbers (haemoglobin). We also demonstrated the utility of marker identification by imaging a 20 μM fluorescein isothiocyanate (FITC) labelling solution on mammalian tissue.
Efficient and robust quantum random number generation by photon number detection
DOE Office of Scientific and Technical Information (OSTI.GOV)
Applegate, M. J.; Cavendish Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge CB3 0HE; Thomas, O.
2015-08-17
We present an efficient and robust quantum random number generator based upon high-rate room temperature photon number detection. We employ an electric field-modulated silicon avalanche photodiode, a type of device particularly suited to high-rate photon number detection with excellent photon number resolution to detect, without an applied dead-time, up to 4 photons from the optical pulses emitted by a laser. By both measuring and modeling the response of the detector to the incident photons, we are able to determine the illumination conditions that achieve an optimal bit rate that we show is robust against variation in the photon flux. Wemore » extract random bits from the detected photon numbers with an efficiency of 99% corresponding to 1.97 bits per detected photon number yielding a bit rate of 143 Mbit/s, and verify that the extracted bits pass stringent statistical tests for randomness. Our scheme is highly scalable and has the potential of multi-Gbit/s bit rates.« less
Application of spherical diodes for megavoltage photon beams dosimetry.
Barbés, Benigno; Azcona, Juan D; Burguete, Javier; Martí-Climent, Josep M
2014-01-01
External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to perform in vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm(2) and 20 × 20 cm(2)) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (± 0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. The measurements of relative dose using the spherical diode described in this work show its feasibility for the dosimetry of megavoltage photon beams. A particularly important feature is its good angular response in the MV range. They would be good candidates for in vivo dosimetry, and quality assurance of VMAT and tomotherapy, and other modalities with beams irradiating from multiple orientations, such as Cyberknife and ViewRay, with minor modifications.
Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography
NASA Astrophysics Data System (ADS)
Watanabe, Manabu; Sato, Eiichi; Kodama, Hajime; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira
2013-09-01
X-ray photon counting was performed using a silicon X-ray diode (Si-XD) at a tube current of 2.0 mA and tube voltages ranging from 50 to 70 kV. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-ray photons, and Xray photons are directly detected using the Si-XD without a scintillator. Photocurrent from the diode is amplified using charge-sensitive and shaping amplifiers. To investigate the X-ray-electric conversion, we performed the event-pulseheight (EPH) analysis using a multichannel analyzer. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 10 min at a scan step of 0.5 mm and a rotation step of 1.0°. In PC-CT at a tube voltage of 70 kV, the image contrast of iodine media fell with increasing lower-level voltage of the event pulse using a comparator.
Age of Palos Verdes submarine debris avalanche, southern California
Normark, W.R.; McGann, M.; Sliter, R.
2004-01-01
The Palos Verdes debris avalanche is the largest, by volume, late Quaternary mass-wasted deposit recognized from the inner California Borderland basins. Early workers speculated that the sediment failure giving rise to the deposit is young, taking place well after sea level reached its present position. A newly acquired, closely-spaced grid of high-resolution, deep-tow boomer profiles of the debris avalanche shows that the Palos Verdes debris avalanche fills a turbidite leveed channel that extends seaward from San Pedro Sea Valley, with the bulk of the avalanche deposit appearing to result from a single failure on the adjacent slope. Radiocarbon dates from piston-cored sediment samples acquired near the distal edge of the avalanche deposit indicate that the main failure took place about 7500 yr BP. ?? 2003 Elsevier B.V. All rights reserved.
Importance of 'blue' photon levels for lettuce seedlings grown under red-light-emitting diodes
NASA Technical Reports Server (NTRS)
Hoenecke, M. E.; Bula, R. J.; Tibbitts, T. W.
1992-01-01
Light-emitting diodes (LEDs) with high-intensity output are being studied as a photosynthetic light source for plants. High-output LEDs have peak emission at approximately 660 nm concentrated in a waveband of +/- 30 nm. Lettuce (Lactuca sativa Grand Rapids') seedlings developed extended hypocotyls and elongated cotyledons when grown under these LEDs as a sole source of irradiance. This extension and elongation was prevented when the red LED radiation was supplemented with more than 15 micromoles m-2 s-1 of 400- to 500-nm photons from blue fluorescent lamps. Blue radiation effects were independent of the photon level of the red radiation.
Silicon-based silicon–germanium–tin heterostructure photonics
Soref, Richard
2014-01-01
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479
Two-photon fluorescence bioimaging with an all-semiconductor laser picosecond pulse source.
Kuramoto, Masaru; Kitajima, Nobuyoshi; Guo, Hengchang; Furushima, Yuji; Ikeda, Masao; Yokoyama, Hiroyuki
2007-09-15
We have demonstrated successful two-photon excitation fluorescence bioimaging using a high-power pulsed all-semiconductor laser. Toward this purpose, we developed a pulsed light source consisting of a mode-locked laser diode and a two-stage diode laser amplifier. This pulsed light source provided optical pulses of 5 ps duration and having a maximum peak power of over 100 W at a wavelength of 800 nm and a repetition frequency of 500 MHz.
Effect of Detector Dead Time on the Performance of Optical Direct-Detection Communication Links
NASA Technical Reports Server (NTRS)
Chen, C.-C.
1988-01-01
Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detect ion sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulted (PPM) channel is studied by analyzing the error probability. It is shown that, when back- ground noise is negligible, the performance of the detector with dead time is similar to that o f a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on background intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.
Effect of detector dead time on the performance of optical direct-detection communication links
NASA Astrophysics Data System (ADS)
Chen, C.-C.
1988-05-01
Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detection sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulated (PPM) channel is studied by analyzing the error probability. It is shown that, when background noise is negligible, the performance of the detector with dead time is similar to that of a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on badkground intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hoffman, D; Chung, E; Hess, C
2015-06-15
Purpose: Two newly emerging transmission detectors positioned upstream from the patient have been evaluated for online quality assurance of external beam radiotherapy. The prototype for the Integral Quality Monitor (IQM), developed by iRT Systems GmbH (Koblenz, Germany) is a large-area ion chamber mounted on the linac accessory tray to monitor photon fluence, energy, beam shape, and gantry position during treatment. The ion chamber utilizes a thickness gradient which records variable response dependent on beam position. The prototype of Delta4 Discover™, developed by ScandiDos (Uppsala, Sweden) is a linac accessory tray mounted 4040 diode array that measures photon fluence during patientmore » treatment. Both systems are employable for patient specific QA prior to treatment delivery. Methods: Our institution evaluated the reproducibility of measurements using various beam types, including VMAT treatment plans with both the IQM ion chamber and the Delta4 Discover diode array. Additionally, the IQM’s effect on photon fluence, dose response, simulated beam error detection, and the accuracy of the integrated barometer, thermometer, and inclinometer were characterized. The evaluated photon beam errors are based on the annual tolerances specified in AAPM TG-142. Results: Repeated VMAT treatments were measured with 0.16% reproducibility by the IQM and 0.55% reproducibility by the Delta4 Discover. The IQM attenuated 6, 10, and 15 MV photon beams by 5.43±0.02%, 4.60±0.02%, and 4.21±0.03% respectively. Photon beam profiles were affected <1.5% in the non-penumbra regions. The IQM’s ion chamber’s dose response was linear and the thermometer, barometer, and inclinometer agreed with other calibrated devices. The device detected variations in monitor units delivered (1%), field position (3mm), single MLC leaf positions (13mm), and photon energy. Conclusion: We have characterized two new transmissions detector systems designed to provide in-vivo like measurements upstream from the patient. Both systems demonstrate substantial utility for online treatment verification and QA of photon external beam radiotherapy.« less
Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes
NASA Astrophysics Data System (ADS)
Hickmott, T. W.
2017-02-01
Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.
Pederson, Gregory T.; Reardon, Blase; Caruso, C.J.; Fagre, Daniel B.
2006-01-01
Effective design of avalanche hazard mitigation measures requires long-term records of natural avalanche frequency and extent. Such records are also vital for determining whether natural avalanche frequency and extent vary over time due to climatic or biophysical changes. Where historic records are lacking, an accepted substitute is a chronology developed from tree-ring responses to avalanche-induced damage. This study evaluates a method for using tree-ring chronologies to provide spatially explicit differentiations of avalanche frequency and temporally explicit records of avalanche extent that are often lacking. The study area - part of John F. Stevens Canyon on the southern border of Glacier National Park – is within a heavily used railroad and highway corridor with two dozen active avalanche paths. Using a spatially geo-referenced network of avalanche-damaged trees (n=109) from a single path, we reconstructed a 96-year tree-ring based chronology of avalanche extent and frequency. Comparison of the chronology with historic records revealed that trees recorded all known events as well as the same number of previously unidentified events. Kriging methods provided spatially explicit estimates of avalanche return periods. Estimated return periods for the entire avalanche path averaged 3.2 years. Within this path, return intervals ranged from ~2.3 yrs in the lower track, to ~9-11 yrs and ~12 to >25 yrs in the runout zone, where the railroad and highway are located. For avalanche professionals, engineers, and transportation managers this technique proves a powerful tool in landscape risk assessment and decision making.
Nanobeam Photonic Crystal Cavity Light-Emitting Diodes
2011-01-01
Nanobeam photonic crystal cavity light-emitting diodes Gary Shambat,1,a) Bryan Ellis,1 Jan Petykiewicz,1 Marie A. Mayer,2 Tomas Sarmiento ,1 James...J. H. Ryou, P. B. Deotare, R. Dupuis, and M. Loncar, Appl. Phys. Lett. 97, 051104 (2010). 5Y. Gong, B. Ellis, G. Shambat, T. Sarmiento , J. S. Harris...F. Karouta, S. He, and R. W. van der Heijden, Appl. Phys. Lett. 97, 151105 (2010). 9B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento , J. Harris, E. E
Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes
NASA Technical Reports Server (NTRS)
Kumar, Sandeep; Boyd, Joseph T.; Jackson, Howard E.
1987-01-01
Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.
The Forward Endcap of the Electromagnetic Calorimeter for the PANDA Detector at FAIR
NASA Astrophysics Data System (ADS)
Albrecht, Malte; PANDA Collaboration
2015-02-01
The versatile 4π-detector PANDA will be built at the Facility for Antiproton and Ion Research (FAIR), an accelerator complex, currently under construction near Darmstadt, Germany. A cooled antiproton beam in a momentum range of 1.5 - 15GeV/c will be provided by the High Energy Storage Ring (HESR). All measurements at PANDA rely on an excellent performance of the detector with respect to tracking, particle identification and energy measurement. The electromagnetic calorimeter (EMC) of the PANDA detector will be equipped with 15744 PbWO4 crystals (PWO-II), which will be operated at a temperature of - 25° C in order to increase the light output. The design of the forward endcap of the EMC has been finalized. The crystals will be read out with Large Area Avalanche Photo Diodes (LAAPDs) in the outer regions and with Vacuum Photo Tetrodes (VPTTs) in the innermost part. Production of photosensor units utilizing charge integrating preamplifiers has begun. A prototype comprised of 216 PbWO4 crystals has been built and tested at various accelerators (CERN SPS, ELSA/Bonn, MAMI/Mainz), where the crystals have been exposed to electron and photon beams of 25MeV up to 15GeV. The results of these test measurements regarding the energy and position resolution are presented.
Development of a PET Scanner for Simultaneously Imaging Small Animals with MRI and PET
Thompson, Christopher J; Goertzen, Andrew L; Thiessen, Jonathan D; Bishop, Daryl; Stortz, Greg; Kozlowski, Piotr; Retière, Fabrice; Zhang, Xuezhu; Sossi, Vesna
2014-01-01
Recently, positron emission tomography (PET) is playing an increasingly important role in the diagnosis and staging of cancer. Combined PET and X-ray computed tomography (PET-CT) scanners are now the modality of choice in cancer treatment planning. More recently, the combination of PET and magnetic resonance imaging (MRI) is being explored in many sites. Combining PET and MRI has presented many challenges since the photo-multiplier tubes (PMT) in PET do not function in high magnetic fields, and conventional PET detectors distort MRI images. Solid state light sensors like avalanche photo-diodes (APDs) and more recently silicon photo-multipliers (SiPMs) are much less sensitive to magnetic fields thus easing the compatibility issues. This paper presents the results of a group of Canadian scientists who are developing a PET detector ring which fits inside a high field small animal MRI scanner with the goal of providing simultaneous PET and MRI images of small rodents used in pre-clinical medical research. We discuss the evolution of both the crystal blocks (which detect annihilation photons from positron decay) and the SiPM array performance in the last four years which together combine to deliver significant system performance in terms of speed, energy and timing resolution. PMID:25120157
Harder, G; Silberhorn, Ch; Rehacek, J; Hradil, Z; Motka, L; Stoklasa, B; Sánchez-Soto, L L
2016-04-01
We report the experimental point-by-point sampling of the Wigner function for nonclassical states created in an ultrafast pulsed type-II parametric down-conversion source. We use a loss-tolerant time-multiplexed detector based on a fiber-optical setup and a pair of photon-number-resolving avalanche photodiodes. By capitalizing on an expedient data-pattern tomography, we assess the properties of the light states with outstanding accuracy. The method allows us to reliably infer the squeezing of genuine two-mode states without any phase reference.
Current transport mechanisms in mercury cadmium telluride diode
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale
This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less
NASA Astrophysics Data System (ADS)
Garnache, A.; Laurain, A.; Myara, M.; Sellahi, M.; Cerutti, L.; Perez, J. P.; Michon, A.; Beaudoin, G.; Sagnes, I.; Cermak, P.; Romanini, D.
2017-11-01
We demonstrate high power (multiwatt) low noise single frequency operation of tunable compact verical-external- cavity surface-emitting-lasers exhibiting a low divergence high beam quality, of great interest for photonics applications. The quantum-well based lasers are operating in CW at RT at 1μm and 2.3μm exploiting GaAs and Sb technologies. For heat management purpose the VECSEL membranes were bonded on a SiC substrate. Both high power diode pumping (using GaAs commercial diode) at large incidence angle and electrical pumping are developed. The design and physical properties of the coherent wave are presented. We took advantage of thermal lens-based stability to develop a short (0.5-5mm) external cavity without any intracavity filter. We measured a low divergence circular TEM00 beam (M2 = 1.2) close to diffraction limit, with a linear light polarization (> 30 dB). The side mode suppression ratio is > 45 dB. The free running laser linewidth is 37 kHz limited by pump induced thermal fluctuations. Thanks to this high-Q external cavity approach, the frequency noise is low and the dynamics is in the relaxation-oscillation-free regime, exhibiting low intensity noise (< 0.1%), with a cutoff frequency ∽ 41MHz above which the shot noise level is reached. The key parameters limiting the laser power and coherence will be discussed. These design/properties can be extended to other wavelengths.
MCT (HgCdTe) IR detectors: latest developments in France
NASA Astrophysics Data System (ADS)
Reibel, Yann; Rubaldo, Laurent; Vaz, Cedric; Tribolet, Philippe; Baier, Nicolas; Destefanis, Gérard
2010-10-01
This paper presents an overview of the very recent developments of the MCT infrared detector technology developed by CEA-LETI and Sofradir in France. New applications require high sensitivity, higher operating temperature and dual band detectors. The standard n on p technology in production at Sofradir for 25 years is well mastered with an extremely robust and reliable process. Sofradir's interest in p on n technology opens the perspective of reducing dark current of diodes so detectors could operate in lower flux or higher operating temperature. In parallel, MCT Avalanche Photo Diodes (APD) have demonstrated ideal performances for low flux and high speed application like laser gated imaging during the last few years. This technology also opens new prospects on next generation of imaging detectors for compact, low flux and low power applications. Regarding 3rd Gen IR detectors, the development of dual-band infrared detectors has been the core of intense research and technological improvements for the last ten years. New TV (640 x 512 pixels) format MWIR/LWIR detectors on 20μm pixel pitch, made from Molecular Beam Epitaxy, has been developed with dedicated Read-Out Integrated Circuit (ROIC) for real simultaneous detection and maximum SNR. Technological and products achievements, as well as latest results and performances are presented outlining the availability of p/n, avalanche photodiodes and dual band technologies for new applications at system level.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hickmott, T. W.
Narrow band-pass filters have been used to measure the spectral distribution of electroluminescent photons with energies between 1.8 eV and 3.0 eV from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. Electroforming of metal-insulator-metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting channel in the insulator and changes the initial high resistance of the MIM diode to a low resistance state. It is a critical step in the development of resistive-switching memories that utilize MIM diodes as the active element. Electroforming of Al-Al{sub 2}O{sub 3}-Ag diodes in vacuum results in voltage-controlledmore » negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence (EL) and electron emission into vacuum (EM) develop simultaneously with the current increase that results in VCNR in the I-V characteristics. EL is due to recombination of electrons injected at the Al-Al{sub 2}O{sub 3} interface with radiative defect centers in Al{sub 2}O{sub 3}. Measurements of EL photons between 1.8 eV and 3.0 eV using a wide band-pass filter showed that EL intensity is exponentially dependent on Al{sub 2}O{sub 3} thickness for Al-Al{sub 2}O{sub 3}-Ag diodes between 12 nm and 20 nm thick. Enhanced El intensity in the thinnest diodes is attributed to an increase in the spontaneous emission rate of recombination centers due to high electromagnetic fields generated in Al{sub 2}O{sub 3} when EL photons interact with electrons in Ag or Al to form surface plasmon polaritons at the Al{sub 2}O{sub 3}-Ag or Al{sub 2}O{sub 3}-Al interface. El intensity is a maximum at 2.0–2.2 eV for Al-Al{sub 2}O{sub 3}-Ag diodes with Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. EL in diodes with 12 nm or 14 nm of Al{sub 2}O{sub 3} is enhanced by factors of 8–10 over EL from a diode with 18 nm of Al{sub 2}O{sub 3}. The extent of EL enhancement in the thinnest diodes can vary significantly between samples. A narrow band of recombination centers was found in one Al-Al{sub 2}O{sub 3}-Ag diode with 12 nm of Al{sub 2}O{sub 3}; it had EL intensity 100 times greater at 2.15 eV than the diode with 18 nm of Al{sub 2}O{sub 3}. EL intensity for photons with energies greater than 2.6 eV is nearly the same for all diodes.« less
NASA Astrophysics Data System (ADS)
Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor
2017-11-01
We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.
NASA Astrophysics Data System (ADS)
Kondo, K.; Baba, T.
2018-03-01
We demonstrate an adiabatic wavelength redshift using dynamic carrier depletion. Free carriers are first induced through two-photon absorption of a control pulse and then extracted by a reverse-biased p-i-n diode formed on a Si photonic crystal waveguide, resulting in rapid carrier depletion. A copropagating signal pulse is redshifted by the consequent increase in refractive index. We experimentally evaluated the dynamics of the carrier depletion by the pump-probe method and explored suitable conditions for adiabatic redshift. The signal's redshift was observed, and was confirmed to originate in the dynamic carrier depletion. The redshift was experimentally determined as 0.21 nm.
NASA Astrophysics Data System (ADS)
Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida
2014-11-01
The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.
Linear and passive silicon diodes, isolators, and logic gates
NASA Astrophysics Data System (ADS)
Li, Zhi-Yuan
2013-12-01
Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.
View from... Photonics Meets Biology Summer School: The bio-mission of diode lasers
NASA Astrophysics Data System (ADS)
Won, Rachel
2015-12-01
Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.
NASA Astrophysics Data System (ADS)
Chen, Yongqiang; Dong, Lijuan; Xu, Xiaohu; Jiang, Jun; Shi, Yunlong
2017-12-01
In this paper, we propose a scheme for subwavelength electromagnetic diodes by employing a photonic crystal (PC) cavity with embedded electromagnetically induced-transparency (EIT)-like highly dispersive meta-interface. A nonreciprocal response, with 21.5 dB transmission light contrast and 12.3 dBm working power, is conceptually demonstrated in a microstrip transmission line system with asymmetric absorption and nonlinear medium inclusion. Such high-contrast transmission and relatively low-threshold diode action stem from the composite PC-EIT mechanism. This mechanism not only possesses a large quality factor and strong localization of fields but also does not enlarge the device volume and drastically reduce transmittance. Our findings should be beneficial for the design of new and practical metamaterial-enabled nonlinear devices.
NASA Astrophysics Data System (ADS)
Cooray, Vernon; Cooray, Gerald; Marshall, Thomas; Arabshahi, Shahab; Dwyer, Joseph; Rassoul, Hamid
2014-11-01
In the present study, electromagnetic fields of accelerating charges were utilized to evaluate the electromagnetic fields generated by a relativistic electron avalanche. In the analysis it is assumed that all the electrons in the avalanche are moving with the same speed. In other words, the growth or the decay of the number of electrons takes place only at the head of the avalanche. It is shown that the radiation is emanating only from the head of the avalanche where electrons are being accelerated. It is also shown that an analytical expression for the radiation field of the avalanche at any distance can be written directly in terms of the e-folding length of the avalanche. This model of the avalanche was utilized to test the idea whether the source of the lightning signatures known as narrow bipolar pulses could be relativistic avalanches. The idea was tested by using the simultaneously measured electric fields of narrow bipolar pulses at two distances, one measured far away from the source and the other in the near vicinity. The avalanche parameters were extracted from the distant field and they are used to evaluate the close field. The results show that the source of the NBP can be modeled either as a single or a multiple burst of relativistic avalanches with speed of avalanches in the range of 2-3 × 108 m/s. The multiple avalanche model agrees better with the experimental data in that it can also generate the correct signature of the time derivatives and the HF and VHF radiation bursts of NBP.