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Sample records for sio2 film induced

  1. Nanoscale Laser-Induced Spallation in SiO2 Films Containing Gold Nanoparticles

    SciTech Connect

    Kudryashov, S.I.; Allen, S.D.; Papernov, S.; Schmid, A.W.

    2006-02-16

    A phenomenological theory of ultraviolet pulsed-laser-induced spallation is proposed to interpret crater formation in SiO2 thin films containing absorbing 18.5-nm gold particles. The theory considers a spherical thermoacoustic stress wave propagating from a thermal source produced by laser-energy absorption inside the particle and surrounding ionized volume. Calculations show that the tensile stress associated with such an acoustic wave may exceed the local strength of the material and cause fracture and spallation of the top film portion. The theory provides an explanation of the experimentally observed complex (two-cone) shape of craters formed in the film with particle-lodging depth exceeding 110 nm. Theoretical estimates for the threshold stress amplitude and peak temperature in the thermal source are in qualitative agreement with the experimental observations.

  2. SiO2/TiO2 Nanocomposite Films on Polystyrene for Light-Induced Cell Detachment Application.

    PubMed

    Cheng, Zhiguo; Cheng, Kui; Weng, Wenjian

    2017-01-25

    Light-induced cell detachment shows much potential in in vitro cell culture and calls for high-performance light-responsive films. In this study, a smooth and dense SiO2/TiO2 nanocomposite thin film with thickness of around 250 nm was first fabricated on H2O2 treated polystyrene (PS) substrate via a low-temperature sol-gel method. It was observed that the film could well-adhere on the PS surface and the bonding strength became increasingly high with the increase of SiO2 content. The peeling strength and shear strength reached 3.05 and 30.02 MPa, respectively. It was observed the surface of the film could transform into superhydrophilic upon 20 min illumination of ultraviolet with a wavelength of 365 nm (UV365). In cell culture, cells, i.e., NIH3T3 and MC3T3-E1 cells, cultured on SiO2/TiO2 nanocomposite film were easily detached after 10 min of UV365 illumination; the detachment rates reached 90.8% and 88.6%, respectively. Correspondingly, continuous cell sheets with good viability were also easily obtained through the same way. The present work shows that SiO2/TiO2 nanocomposite thin film could be easily prepared on polymeric surface at low temperature. The corresponding film exhibits excellent biocompatibility, high bonding strength, and good light responses. It could be a good candidate for the surface of cell culture utensils with light-induced cell detachment property.

  3. Defect induced phonon scattering for tuning the lattice thermal conductivity of SiO2 thin films

    NASA Astrophysics Data System (ADS)

    Cao, Sen; He, Hu; Zhu, Wenhui

    2017-01-01

    In this work, the thermal properties of nanoscale SiO2 thin films have been systematically investigated with respect to the thickness, crystal orientations and the void defects using non-equilibrium molecular-dynamics (NEMD) simulation. Size effect for the lattice thermal conductivity of nanoscale SiO2 thin films was observed. Additionally, SiO2 thin films with [001] oriented exhibited greater thermal conductivity compared with other crystal orientations which was discussed in terms of phonon density of states (PDOS). Furthermore, the porosity of void defects was introduced to quantify the influence of defects for thermal conductivity. Results exhibited that the thermal conductivity degraded with the increase of porosity. Two thermal conductivity suppression mechanisms, namely, void defects induced material loss interdicting heat conduction and phonon scattering enhanced by the boundary of defects, were proposed. Then, a further simulation was deployed to find that the effect of boundary scattering of defects was dominant in thermal conductivity degradation compared with material loss mechanism. The conclusion suggests that the thermal conductivity could be configured via regulating the distribution of PDOS directly associated with void defects.

  4. Influence of outgassing organic contamination on the transmittance and laser-induced damage of SiO2 sol-gel antireflection film

    NASA Astrophysics Data System (ADS)

    Yang, Liang; Xiang, Xia; Miao, Xinxiang; Li, Zhijie; Zhou, Guorui.; Yan, Zhonghua; Yuan, Xiaodong; Zheng, Wanguo; Zu, Xiaotao

    2015-12-01

    The influence of organic contamination (rubber outgassing) on the transmittance of the SiO2 sol-gel antireflection (AR) film and laser-induced damage threshold (LIDT) at 355 nm for 3ω AR film and at 1064 nm for 1ω AR film is studied. The correlation between the contamination time and the transmittance loss/LIDT of 1ω/3ω AR film is also investigated both in atmospheric and vacuum environments. The results show that the transmittance loss increases with increasing contamination time, and the LIDT decreases with increasing contamination time for both in atmospheric and vacuum environments. In addition, the resistance against contamination of the 1ω film is stronger than 3ω film, and the contamination is more serious in vacuum than in an atmosphere environment for the same contamination time. Meanwhile, the damage mechanism is also discussed. It indicated that both the porous structure and photo-thermal absorption contribute to the decreasing LIDT of the sol-gel AR film.

  5. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2010-10-01

    The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 °C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 °C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

  6. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  7. Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Yan, Kai; Yao, Wenqing; Zhao, Yuanyuan; Yang, Liping; Cao, Jiangli; Zhu, Yongfa

    2016-12-01

    The HfO2 films were deposited on SiO2 (native)/n-Si (100) substrates by electron beam evaporation (EBE) technology. The structural evolution of the films during thermal annealing were studied by using grazing incidence X-ray diffraction (GIXRD), Raman spectra and Auger electron spectroscopy (AES), while the change of bonding structure and interface products were obtained by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The existence of oxygen vacancies in the surface layer of the as-deposited HfO2 film was confirmed by Auger line shapes, which could facilitate the adsorption of ambient oxygen on the free surface and induce the diffusion of oxygen atoms to the surface layer during thermal annealing. Meanwhile, the newly formed defects in the films could provide more passageways for the diffusion of oxygen atoms to the film-substrate interface layer. The oxygen that diffused to the interface layer was the key factor of the change in the interface structure, which participated in the interface reaction. In addition, the formation amount and bonding structure of the interface products such as suboxide of silicon and hafnium silicate were influenced by the oxygen concentration of the external environment.

  8. Dewetting process of Au films on SiO2 nanowires: Activation energy evaluation

    NASA Astrophysics Data System (ADS)

    Ruffino, F.; Grimaldi, M. G.

    2015-05-01

    SiO2 nanowires gain scientific and technological interest in application fields ranging from nano-electronics, optics and photonics to bio-sensing. Furthermore, the SiO2 nanowires chemical and physical properties, and so their performances in devices, can be enhanced if decorated by metal nanoparticles (such Au) due to local plasmonic effects. In the present paper, we propose a simple, low-cost and high-throughput three-steps methodology for the mass-production of Au nanoparticles coated SiO2 nanowires. It is based on (1) production of the SiO2 nanowires on Si surface by solid state reaction of an Au film with the Si substrate at high temperature; (2) sputtering deposition of Au on the SiO2 nanowires to obtain the nanowires coated by an Au film; and (3) furnace annealing processes to induce the Au film dewetting on the SiO2 nanowires surface. Using scanning electron microscopy analyses, we followed the change of the Au nanoparticles mean versus the annealing time extracting values for the characteristic activation energy of the dewetting process of the Au film on the SiO2 nanowires surface. Such a study can allow the tuning of the nanowires/nanoparticles sizes for desired technological applications.

  9. Surface texturing effect on crack suppression of SiO2 film formed by F2 laser-induced photochemical surface modification of silicone on polycarbonate under heat resistance test

    NASA Astrophysics Data System (ADS)

    Nojiri, Hidetoshi; Okoshi, Masayuki

    2017-08-01

    A crack-free SiO2 film was successfully fabricated on silicone-coated polycarbonate (PC) even under heat resistance tests at 100 and 120 °C for 3 h by an additional rubbing treatment with steel wool for use as an automobile window material. The SiO2 film was formed by 157 nm F2 laser-induced photochemical surface modification of silicone on PC. The modified SiO2 layer was also zoned with a mesh mask during the laser irradiation. The zoned SiO2 layer was effective for suppressing cracks during laser irradiation. However, even the zoned layer caused cracks under heat resistance tests. A mechanism of the cracking was analyzed on the basis of observations of sample surfaces by confocal laser microscopy. The rubbed samples showed high heat resistance. By atomic force microscopy, the surface of the modified SiO2 layer was clearly observed to be textured, which reduced the large difference in the thermal expansion coefficient between SiO2 and silicone on PC, thus maintaining optical transparency.

  10. Crack suppression of SiO2 thin film formed by 157 nm F2 laser induced photochemical surface modification of hard silicone coating film on polycarbonate(Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Nojiri, Hidetoshi; Okoshi, Masayuki

    2017-03-01

    Light-weighting of vehicle is now strongly required for reducing gasoline consumption and CO2 emission. In this study, F2 laser was irradiated to the surface of hard silicone resin, coated by dip coating method onto the film of acrylic resin on a polycarbonate substrate. The surface part of the silicone resin was photo-chemically modified into SiO2. One of two types of aperture mask, 3×3 mm2 and 50×50 μm2, was set on the sample surface. The single pulse fluence was varied from 4 to 14 mJ/cm2, pulse repetition frequency was set to 10 Hz, and irradiation time was changed from 30 to 120 s. N2 gas was induced around the surface of the sample. After modification, SiO2 modified layer was etched by HF 1% diluted solution, and the etched depth was measured by a stylus-type surface profilometer. As a result of experiments, stress in the SiO2 modified layer increased by increasing of F2 laser irradiation time. In case of using aperture mask of 3×3 mm2, cracks were generated only on the irradiated area for longer irradiation time than 60 s. It is considered that the tensile stress in the modified layer exceeded the tensile fracture strength of 48 MPa of typical SiO2. When a mesh mask of 50×50 μm2 aperture was used, no crack generated even for a long irradiation of 200 s. We found, the tensile stress in SiO2 modified film can be reduced remarkably with using smaller aperture size of mesh mask, and it is very effective to prevent cracking.

  11. Impacts of SiO2 planarization on optical thin film properties and laser damage resistance

    NASA Astrophysics Data System (ADS)

    Day, T.; Wang, H.; Jankowska, E.; Reagan, B. A.; Rocca, J. J.; Stolz, C. J.; Mirkarimi, P.; Folta, J.; Roehling, J.; Markosyan, A.; Route, R. R.; Fejer, M. M.; Menoni, C. S.

    2016-12-01

    Lawrence Livermore National Laboratory (LLNL) and Colorado State University (CSU) have co-developed a planarization process to smooth nodular defects. This process consists of individually depositing then etching tens of nanometers of SiO2 with a ratio of 2:1, respectively. Previous work shows incorporating the angular dependent ion surface etching and unidirectional deposition reduces substrate defect cross-sectional area by 90%. This work investigates the micro-structural and optical modifications of planarized SiO2 films deposited by ion beam sputtering (IBS). It is shown the planarized SiO2 thin films have 3x increase in absorption and 18% reduction in thin film stress as compared to control (as deposited) SiO2. Planarized SiO2 films exhibit 13% increase in RMS surface roughness with respect to the control and super polished fused silica substrates. Laser-induced damage threshold (LIDT) results indicate the planarization process has no effect on the onset fluence but alters the shape of the probability vs fluence trace.

  12. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO 2/SiO 2 + Cu and SiO 2/SiO 2 + Au nanolayered multilayer films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Chacha, J.; Smith, C.; Pugh, M.; Colon, T.; Heidary, K.; Johnson, R. B.; Ila, D.

    2011-12-01

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO 2/SiO 2 + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO 2/SiO 2 + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO 2, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  13. Laser plasma shockwave cleaning of SiO 2 particles on gold film

    NASA Astrophysics Data System (ADS)

    Ye, Yayun; Yuan, Xiaodong; Xiang, Xia; Dai, Wei; Chen, Meng; Miao, Xinxiang; Lv, Haibing; Wang, Haijun; Zheng, Wanguo

    2011-04-01

    A Nd:YAG laser (1064 nm) induces optical breakdown of the airborne above the gold-coated K9 glass surface and the created shockwave removes the SiO2 particles contaminated on the gold films. The laser cleaning efficiency has been characterized by optical microscopy, dark field imaging, ultraviolet-visible-near infrared spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and the Image-pro software. The relationships between removal ratio and particle position and laser gap distance have been studied in the case of single pulse laser cleaning. The results show that the 1064 nm laser induced plasma shockwave can effectively remove the SiO2 particles. The removal ratio can reach above 90%. The effects of particle position and laser gap distance on the cleaning efficiency are simulated for the single pulse laser cleaning. The simulated results are consistent with the experimental ones.

  14. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  15. Enhanced luminous transmittance of thermochromic VO2 thin film patterned by SiO2 nanospheres

    NASA Astrophysics Data System (ADS)

    Zhou, Liwei; Liang, Jiran; Hu, Ming; Li, Peng; Song, Xiaolong; Zhao, Yirui; Qiang, Xiaoyong

    2017-05-01

    In this study, an ordered SiO2 nanosphere array coated with vanadium dioxide (VO2) has been fabricated to enhance transmittance with the potential application as an energy-efficient coating in the field of smart windows. SiO2 arrays were formed using the methods of self-assembly, and VO2 thin films were prepared by rapid thermal annealing (RTA) of sputtered vanadium films. VO2@SiO2 arrays were characterized by scanning electron microscopy, X-ray diffraction, a four-point probe, and UV-vis-NIR spectrophotometry. Compared with the planar films, the films deposited on 300 nm diameter SiO2 nanospheres can offer approximately 18% enhancement of luminous transmission (Tlum) because the diameter is smaller than the given wavelength and the protuberance of the surface array behaves as a gradation of refractive index producing antireflection. The solar regulation efficiency was not much deteriorated.

  16. Thin films of SiO2 and hydroxyapatite on titanium deposited by spray pyrolysis.

    PubMed

    Jokanovic, V; Jokanovic, B; Izvonar, D; Dacic, B

    2008-05-01

    Wet spray pyrolysis of fine, well-dispersed a SiO2 sol was used for the deposition of thin films of silicon dioxide. The sol was obtained by hydrothermal precipitation of silicon acid from a solution at pH = 10. The morphology, roughness, phase composition, chemical homogeneity and the mechanism of the films were investigated by SEM, EDS and IR spectroscopy. The obtained results show a complete covering of the titanium substrate with SiO2 after 3 h of deposition. It was observed that the film thickness increased from 3 to 19 microm, the roughness of the film decreased from 12 to 3 microm, while the morphology of the deposit changed considerably. A hydroxyapatite film was prepared on the so-obtained SiO2 thin film by spray pyrolysis deposition and its morphology and phase composition were investigated.

  17. Highly Luminescent Hybrid SiO2-Coated CdTe Quantum Dots Retained Initial Photoluminescence Efficiency in Sol-Gel SiO2 Film.

    PubMed

    Sun, Hongsheng; Xing, Yugui; Wu, Qinan; Yang, Ping

    2015-02-01

    A highly luminescent silica film was fabricated using tetraethyl orthosilicate (TEOS) and 3-aminopropyltrimethoxysilane (APS) through a controlled sol-gel reaction. The pre-hydrolysis of TEOS and APS which resulted in the mixture of TEOS and APS in a molecular level is a key for the formation of homogenous films. The aminopropyl groups in APS play an important role for obtaining homogeneous film with high photoluminescence (PL). Red-emitting hybrid SiO2-coated CdTe nano-crystals (NCs) were fabricated by a two-step synthesis including a thin SiO2 coating via a sol-gel process and a subsequent refluxing using green-emitting CdTe NCs. The hybrid SiO2-coated CdTe NCs were embedded in a functional SiO2 film via a two-step process including adding the NCs in SiO2 sol with a high viscosity and almost without ethanol and a subsequent spinning coating. The hybrid SiO2-coated CdTe NCs retained their initial PL efficiency (54%) in the film. Being encapsulated with the hybrid NCs in the film, no change on the absorption and PL spectra of red-emitting CdTe NCs (632 nm) was observed. This indicates the hybrid NCs is stable enough during preparation. This phenomenon is ascribed to the controlled sol-gel process and a hybrid SiO2 shell on CdTe NCs. Because these films exhibited high PL efficiency and stability, they will be utilizable for potential applications in many fields.

  18. Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film.

    PubMed

    Chien, Heng-Chieh; Yao, Da-Jeng; Huang, Mei-Jiau; Chang, Tien-Yao

    2008-05-01

    In this paper, we describe an easy-to-use method to measure the thermal conductivity of thin films based on an electrical heating/sensing mechanism and a steady-state technique. The method used relative commonly used instruments, and without any signal processing circuit, is easy to be used in such thin-film thermal conductivity measurement. The SiO2 thin-film samples, prepared by thermal oxidation, plasma enhanced chemical vapor deposition (PECVD), and E-beam evaporator, were deposited on a silicon substrate. The apparent thermal conductivity, the intrinsic thermal conductivity of SiO2 films, and the total interface thermal resistance of the heater/SiO2/silicon system were evaluated. Our data showed agreement with those data obtained from previous literatures and from the 3 omega method. Furthermore, by using a sandwiched structure, the interface thermal resistance of Cr/PECVD SiO2 and PECVD SiO2/silicon were also separately evaluated in this work. The data showed that the interface thermal resistance of Cr/PECVD SiO2 (metal/dielectric) is about one order of magnitude larger than that of PECVD SiO2/silicon (dielectric/dielectric).

  19. Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

    NASA Astrophysics Data System (ADS)

    Utsumi, Jun; Ide, Kensuke; Ichiyanagi, Yuko

    2016-02-01

    The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25 MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

  20. Ion assisted deposition of SiO2 film from silicon

    NASA Astrophysics Data System (ADS)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  1. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching.

    PubMed

    Ghazaryan, Lilit; Kley, E-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-24

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  2. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

    NASA Astrophysics Data System (ADS)

    Ghazaryan, Lilit; Kley, E.-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-01

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  3. High-removal selectivity through interaction between polyacrylamide and SiO2 film in poly isolation chemical mechanical planarization.

    PubMed

    Kim, Ye-Hwan; Lee, Kee-June; Park, Jea-Gun; Paik, Ungyu

    2009-06-01

    The interaction between polyacrylamide (PAM) and SiO2 film was investigated in order to elucidate the removal polycrystalline silicon (poly Si) to SiO2 selectivity in poly isolation chemical mechanical planarization (CMP). The hydrophilic characteristics of poly Si and SiO2 were analyzed by the X-ray photoelectron spectroscopy (XPS) and contact angle measurement. The surface of SiO2 is more hydrophilic than that of poly Si due to the siloxane (triple bond Si-O-Si triple bond) bonding. The adsorption behavior of PAM on poly Si and SiO2 film was determined by adsorption isotherms and force measurements using atomic force microscopy (AFM). Interaction between siloxane bonding of SiO2 film and the amine group along the backbone of PAM results in the adsorption of PAM on SiO2 film. Consequently, the passivation layer of PAM on the SiO2 film prevented abrasives from approaching the surface of SiO2 film, which led to suppression of the removal rate of SiO2 film from 82 to 12 A/min in poly isolation CMP process.

  4. SiO2 Film Deposition by KrF Excimer Laser Irradiation

    NASA Astrophysics Data System (ADS)

    Nishino, Shigehiro; Honda, Hiroki; Matsunami, Hiroyuki

    1986-01-01

    Deposition of SiO2 on a Si substrate by irradiating SiH4-O2-N2 mixture gas with focused KrF excimer laser (wavelength: 249 nm) was carried out. The deposition rate was 300Å/min at a substrate temperature of 250°C. The deposition strongly depends on the substrate temperature, laser power and flow ratio of O2/SiH4, and these parameters have individual threshold values for the film deposition. Photo-initiation phenomena in SiO2 deposition are observed for the first time. The deposited film was evaluated by etching and infrared measurements together with electrical measurements.

  5. The electro-optical behavior of liquid crystal molecules on the surface of SiO2 inorganic thin films.

    PubMed

    Sung, Shi-Joon; Yang, Kee-Jeong; Kim, Dae-Hwan; Do, Yun Seon; Kang, Jin-Kyu; Choi, Byeong-Dae

    2009-12-01

    Inorganic thin films are well known for the liquid crystal alignment layers for LCoS application due to the higher thermal and photochemical stability of inorganic materials. The switching time of liquid crystals is the important factor for the projection application and the faster switching time is required for the high quality display. The switching behavior of liquid crystal molecules on inorganic thin films might be closely related with the surface properties of the inorganic thin films. Therefore the understanding of surface properties of the inorganic thin films is required for the enhancement of the switching time of liquid crystals of LCoS devices. In this work, we prepared the SiO2 inorganic thin films and the electro-optical behavior of liquid crystal molecules on SiO2 thin film was investigated. The sputtering condition of SiO2 thin film was closely related with the thickness and the surface morphology of SiO2 thin film. The switching time of liquid crystals with negative dielectric constant on SiO2 inorganic thin films was dominantly affected by the size of protrusion on the surface of SiO2 thin film and the surface roughness of SiO2 thin film was also related with the switching time of liquid crystals. From these results, it is possible to prepare the SiO2 inorganic thin film suitable for the liquid crystal alignment layer for VAN LC mode.

  6. Double-layer antireflection from silver nanoparticle integrated SiO2 layer on silicon wafer: effect of nanoparticle morphology and SiO2 film thickness

    NASA Astrophysics Data System (ADS)

    Parashar, Piyush K.; Sharma, R. P.; Komarala, Vamsi K.

    2017-01-01

    Optical properties of silver nanoparticles (Ag NPs) on SiO2 thin films of variable thickness, as a plasmonic double layer on a plain silicon wafer, are investigated for broadband antireflection. The light confinement into the silicon is found to be sensitive to the SiO2 film thickness of a few nanometers due to an evanescent character of the Ag NPs’ near-fields. The Ag NPs’ size anisotropy plays a pivotal role in incident light coupling due to the sub-wavelength spatial variation of near-fields at the interface, which leads to reflectance spectrum oscillation behavior in the nanoparticles’ surface plasmon resonance and off-resonance regions. With an optimized SiO2/Ag NP double layer, the average reflectance in the 300-1200 nm spectral range is reduced to 14% in comparison to 42% in bare silicon, with a flat minimum reflectance of 3.5% in the 725-1020 nm spectral region. Finite difference time domain calculations are performed for spatial variation of near-fields and their angular distribution of far-fields at different inhomogeneous interfaces (where near-fields exist). The total reflectance from various configurations is simulated theoretically by considering the experimentally optimized physical parameters of the plasmonic double layer to support the observations. To verify the role of SiO2 surface topology apart from the nanoparticle morphology in plasmon near-field coupling, thermally grown SiO2 films are investigated along with the sputtered SiO2 thin films.

  7. Anti-fogging nanofibrous SiO(2) and nanostructured SiO(2)-TiO(2) films made by rapid flame deposition and in situ annealing.

    PubMed

    Tricoli, Antonio; Righettoni, Marco; Pratsinis, Sotiris E

    2009-11-03

    Transparent, pure SiO(2), TiO(2), and mixed silica-titania films were (stochastically) deposited directly onto glass substrates by flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate and/or titanium tetra isopropoxide in xylene) and stabilized by in situ flame annealing. Silicon dioxide films consisted of a network of interwoven nanofibers or nanowires several hundred nm long and 10-15 nm thick, as determined by microscopy. These nanowire or nanofibrous films were formed by chemical vapor deposition (surface growth) on bare glass substrates during scalable combustion of precursor solutions at ambient conditions, for the first time to our knowledge, as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, titanium dioxide films consisted of nanoparticles 3-5 nm in diameter that were formed in the flame and deposited onto the glass substrate, resulting in highly porous, lace-like nanostructures. Mixed SiO(2)-TiO(2) films (40 mol % SiO(2)) had similar morphology to pure TiO(2) films. Under normal solar radiation, all such films having a minimal thickness of about 300 nm completely prevented fogging of the glass substrates. These anti-fogging properties were attributed to inhibition of water droplet formation by such super-hydrophilic coatings as determined by wetting angle measurements. Deactivated (without UV radiation) pure TiO(2) coatings lost their super-hydrophilicity and anti-fogging properties even though their wetting angle was reduced by their nanowicking. In contrast, SiO(2)-TiO(2) coatings exhibited the best anti-fogging performance at all conditions taking advantage of the high surface coverage by TiO(2) nanoparticles and the super-hydrophilic properties of SiO(2) on their surface.

  8. Effects of modifiers on the hydrophobicity of SiO2 films from nano-husk ash

    NASA Astrophysics Data System (ADS)

    Xu, Kejing; Sun, Qingwen; Guo, Yanqing; Dong, Shuhua

    2013-07-01

    Nano-husk ashes were prepared by burning rice-husk with self-propagating method. The super-hydrophobic SiO2 films from nano-husk ash were prepared by sol-gel method using hydroxy silicone oil (HSO), hexamethyldisilazane (HMS), or methyl triethoxysilane (MTS) as modifiers. The effects of modifiers on the hydrophobic property of SiO2 films were studied, and the performances were characterized by the XRD, UV-vis, BET, EDS, SEM, IR, and Contact Angle Analyzer. The results showed that the contact angle of SiO2 films was more than 160° when volume ratio of the modifiers to silicon-sodium solution (SSS) was 0.15. The mechanism of modifiers on SiO2 surfaces is a graft copolymerization. The hydrophobic groups in the modifiers replace the hydroxy groups on SiO2 surfaces and make SiO2 surfaces present super-hydrophobicity.

  9. Chemical Vapor Deposition of Cu Film on SiO2 Using Cyclopentadienylcoppertriethylphosphine

    NASA Astrophysics Data System (ADS)

    Chichibu, Shigefusa; Yoshida, Nobuhide; Higuchi, Hirofumi; Matsumoto, Satoru

    1992-12-01

    Chemical vapor deposition of Cu film on SiO2 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450°C. From Auger electron spectroscopy measurements, no simultaneous incorporation of oxygen during the deposition has been confirmed. Relatively low temperature deposition is preferable to reduce the condensation of deposited Cu.

  10. Vapor-phase synthesis of mesoporous SiO2-P2O5 thin films.

    PubMed

    Nishiyama, Norikazu; Kaihara, Junji; Nishiyama, Yuko; Egashira, Yasuyuki; Ueyama, Korekazu

    2007-04-24

    Mesoporous SiO2-P2O5 films were synthesized from the vapor phase onto a silicon substrate. First, a precursor solution of cetyltrimethylammonium bromide (C16TAB), H3PO4, ethanol, and water was deposited on a silicon substrate by a spin-coating method. Then, the C16TAB-H3PO4 composite film was treated with tetraethoxysilane (TEOS) vapor at 90-180 degrees C for 2.5 h. The H3PO4-C16TAB composite formed a hexagonal structure on the silicon substrate before vapor treatment. The TEOS molecules penetrated into the film without a phase transition. The periodic mesostructure of the SiO2-P2O5 films was retained after calcination. The calcined films showed a high proton conductivity of about 0.55 S/cm at room temperature. The molar ratio of P/Si in the SiO2-P2O5 film was as high as 0.43, a level that was not attained by a premixing sol-gel method. The high phosphate group content and the ordered periodic mesostructure contributed to the high proton conductivity.

  11. Optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres.

    PubMed

    Oh, Yong Taeg; Choi, Bum Ho; Shin, Dong Chan

    2012-02-01

    The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.

  12. Preparation of photocatalytic TiO2-SiO2 thin film by sol-gel coating

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Han; Choi, Se-Young

    2004-07-01

    TiO2-SiO2 composite thin films for photocatalysis were fabricated on window glass with sol-gel technology. By measuring the contact angle of the film surface and the degradation of methylene blue, the super-hydrophilicity and photocatalytic activity of the composite thin films were studied. The results indicate that the TiO2-SiO2 composite thin film can yield various glass self-cleaning effects with low maintenance expenses.

  13. The hybrid photocatalyst of TiO2-SiO2 thin film prepared from rice husk silica

    NASA Astrophysics Data System (ADS)

    Klankaw, P.; Chawengkijwanich, C.; Grisdanurak, N.; Chiarakorn, Siriluk

    2012-03-01

    The TiO2-SiO2 thin film was prepared by self-assembly method by mixing SiO2 precursor with titanium precursor solution and aged to obtain a co-precipitation of silica and titanium crystals. Dip coating method was applied for thin film preparation on glass slide. The X-ray diffraction (XRD) of the self-assembly thin film had no characteristic property of SiO2 and even anatase TiO2 but indicated new crystal structure which was determined from the Fourier Transform Infrared Spectrophotometer (FTIR) as a hybridized Ti-O-Si bonding. The surface area and surface volume of the self-assembly sample were increased when SiO2 was incorporated into the film. The self-assembly TiO2-SiO2 thin film exhibited the enhanced photocatalytic decolorization of methylene blue (MB) dye. The advantages of SiO2 are; (1) to increase the adsorbability of the film and (2) to provide the hydroxyl radical to promote the photocatalytic reaction. The self-assembly thin film with the optimum molar ratio (SiO2:TiO2) as 20:80 gave the best performance for photocatalytic decolorization of MB dye with the overall efficiency of 81%.

  14. Direct fabrication of graphene on SiO2 enabled by thin film stress engineering

    PubMed Central

    McNerny, Daniel Q.; Viswanath, B.; Copic, Davor; Laye, Fabrice R.; Prohoda, Christophor; Brieland-Shoultz, Anna C.; Polsen, Erik S.; Dee, Nicholas T.; Veerasamy, Vijayen S.; Hart, A. John

    2014-01-01

    We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind. PMID:24854632

  15. Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.

    PubMed

    McNerny, Daniel Q; Viswanath, B; Copic, Davor; Laye, Fabrice R; Prohoda, Christophor; Brieland-Shoultz, Anna C; Polsen, Erik S; Dee, Nicholas T; Veerasamy, Vijayen S; Hart, A John

    2014-05-23

    We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind.

  16. Accurate characterization of SiO2 thin films using surface acoustic waves.

    PubMed

    Knapp, Matthias; Lomonosov, Alexey M; Warkentin, Paul; Jäger, Philipp M; Ruile, Werner; Kirschner, Hans-Peter; Honal, Matthias; Bleyl, Ingo; Mayer, Andreas P; Reindl, Leonhard M

    2015-04-01

    We have investigated the acoustic properties of silicon dioxide thin films. Therefore, we determined the phase velocity dispersion of LiNbO3 substrate covered with SiO2 deposited by a plasma enhanced chemical vapor deposition and a physical vapor deposition (PVD) process using differential delay lines and laser ultrasonic method. The density p and the elastic constants (c11 and c44) can be extracted by fitting corresponding finite element simulations to the phase velocities within an accuracy of at least +4%. Additionally, we propose two methods to improve the accuracy of the phase velocity determination by dealing with film thickness variation of the PVD process.

  17. Rapid lateral solidification of pure Cu and Au thin films encapsulated in SiO2

    NASA Astrophysics Data System (ADS)

    Kline, J. E.; Leonard, J. P.

    2005-05-01

    Excimer laser melting and lateral resolidification is demonstrated in 200nm thick Cu and Au elemental metal thin films encapsulated between SiO2 layers. Projection irradiation is used to selectively and completely melt lines 3to30μm wide in the metal film—with rapid lateral solidification originating from the unmelted sidewalls of the molten region—resulting in large columnar grains, extending transversely to the middle of the line. Transmission electron microscopy reveals twinning structures and other defects typical of rapid solidification. Encapsulation and control of the fluence are found to be crucial parameters necessary to prevent film dewetting while molten.

  18. Nano-Bi2WO6 functionalized flexible SiO2 fibrous film for water purification

    NASA Astrophysics Data System (ADS)

    Ma, Zhijun; Hu, Zhongliang; He, Xin; Fang, Zaijin; Li, Yang; Qiu, Jianrong

    2016-01-01

    Electrospinning-derived nanofibrous films functionalized by photocatalysts have been extensively studied in the applications of environmental remediation. In this investigation, we propose a simple strategy for preparation of flexible and chemically stable nanofibrous films with high photocatalytic efficiency. Specifically, SiO2 nanofibrous film modified with Bi2WO6 nanoparticles was studied as a representative. Flexible SiO2 nanofibers were derived through sol-gel and electrospinning techniques. By simple soaking in precursor solution of Bi2WO6 and calcination, the SiO2 nanofibrous film was functionalized by Bi2WO6 nanoparticles, forming hierarchically porous composite film. Micro morphology, mechanical property and photocatalytic performance were tuned via changing the concentration of the soaking solution. Photocatalytic removal of organic pollutant from water was performed using RhB (Rhodamine B) as a model. The strategy proposed here is also widely applicable for preparation of composite films modified with other kinds of photocatalysts. SiO2-Bi2MoO6, SiO2-TiO2 and SiO2-CuO composite films were prepared in a similar way to demonstrate the versatility of the proposed preparation strategy.

  19. Effects of Thermal Annealing on the Thermoelectric and Optical Properties of SiO2/SiO2+Cu Nanolayer Thin Films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Baker, M.; Lassiter, J.; Smith, C.; Muntele, C.; Johnson, R. B.

    2015-06-01

    We have prepared multi-nanolayer superlattice thin-film systems comprising 36 alternating layers of SiO2 and SiO2+Cu nanolayers, of total thickness approximately 300 nm, by magnetron direct current-radio frequency sputtering. To modify their thermoelectric and optical properties, the films were placed in a furnace for annealing at temperatures between 500°C and 700°C, in air, for 1 h, to form quantum nano-dots and/or quantum clusters. Atomic force microscopy was used to analyze the surface of the thin-film systems. The thermoelectric and optical properties of the systems were characterized by study of ultraviolet-visible-near infrared absorption, fluorescence, and Raman spectroscopy, and by measurement of Seebeck coefficients. Seebeck coefficients increased from -70 μV/K to -100 μV/K when the temperature was increased from 0°C to 700°C. Optical absorption spectra showed that formation of nano-dots and/or nano-clustering also occurred as the temperature was increased. Thermal annealing affected the optical and thermal properties of the multi-nanolayer thermoelectric thin-film systems in the positive direction.

  20. Effects of Thermal Annealing on the Thermoelectric and Optical Properties of SiO2/SiO2+Cu Nanolayer Thin Films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Baker, M.; Lassiter, J.; Smith, C.; Muntele, C.; Johnson, R. B.

    2014-09-01

    We have prepared multi-nanolayer superlattice thin-film systems comprising 36 alternating layers of SiO2 and SiO2+Cu nanolayers, of total thickness approximately 300 nm, by magnetron direct current-radio frequency sputtering. To modify their thermoelectric and optical properties, the films were placed in a furnace for annealing at temperatures between 500°C and 700°C, in air, for 1 h, to form quantum nano-dots and/or quantum clusters. Atomic force microscopy was used to analyze the surface of the thin-film systems. The thermoelectric and optical properties of the systems were characterized by study of ultraviolet-visible-near infrared absorption, fluorescence, and Raman spectroscopy, and by measurement of Seebeck coefficients. Seebeck coefficients increased from -70 μV/K to -100 μV/K when the temperature was increased from 0°C to 700°C. Optical absorption spectra showed that formation of nano-dots and/or nano-clustering also occurred as the temperature was increased. Thermal annealing affected the optical and thermal properties of the multi-nanolayer thermoelectric thin-film systems in the positive direction.

  1. The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal

    NASA Astrophysics Data System (ADS)

    Chou, Shu-Tsun; Tsai, Jen-Hwan; Sheu, Bor-Chiou

    1998-05-01

    Two photoluminescence (PL) bands were observed from Si+-implanted SiO2 films after rapid thermal anneal (RTA) at ⩾950 °C. The PL band at 2.2 eV was obtained from the films with RTA in dry nitrogen and the other one at 1.9 eV was obtained from the films with RTA in wet nitrogen. The luminescence at 2.2 eV disappeared after the films were reannealed with an electrical oven at ⩾600 °C, which is similar to the behavior of oxygen- and hydrogen-deficient structures, and therefore, the mechanism of this PL band was attributed to the Eδ' center. The other one at the 1.9 eV band, being related closely to Si-O-H structures and still appearing after being reannealed to 800 °C, could be ascribed to the effect of nonbridging oxygen hole centers.

  2. Active Antifogging Property of Monolayer SiO2 Film with Bioinspired Multiscale Hierarchical Pagoda Structures.

    PubMed

    Han, Zhiwu; Mu, Zhengzhi; Li, Bo; Wang, Ze; Zhang, Junqiu; Niu, Shichao; Ren, Luquan

    2016-09-27

    Antifogging surfaces with hydrophilic or even superhydrophilic wetting behavior have received significant attention due to their ability to reduce light scattering by film-like condensation. However, a major challenge remains in achieving high-speed antifogging performance and revealing the hydrophilic-based antifogging mechanism of glass or other transparent materials under aggressive fogging conditions. Herein, with inspiration from the fog-free property of the typical Morpho menelaus terrestris butterfly (Butler, 1866) wing scales, a monolayer SiO2 film with multiscale hierarchical pagoda structures (MHPSs) based on glass substrate was designed and fabricated using an optimized biotemplate-assisted wet chemical method without any post-treatments. The biomimetic monolayer film (BMF) composed of nanoscale SiO2 3D networks displayed excellent antifogging properties, which is superior to that of the glass substrate itself. The MHPS-based BMF even kept high transmittance (∼95%) under aggressive fog conditions, and it almost instantaneously recovered to a fog-free state (<5 s). Moreover, the underlying active antifogging strategy gathering initial fog capture and final antifog together was revealed. The fogdrops spontaneously adhered on the BMF surface and rapidly spread along the MHPSs in an anisotropic way, which made the fogdrops evaporate instantaneously to attain an initial fog-free state, leading to an efficient active antifogging performance. These properties mainly benefit from the synergistic effect of both hydrophilic chemical compositions (nanoscale SiO2) and physical structures (biomimetic MHPSs) of the BMF. High-speed active antifogging performance of the glass materials enabled the retention of a high transmittance property even in humid conditions, heralding reliable optical performance in outdoor practical applications, especially in aggressive foggy environments. More importantly, the investigations in this work offer a promising way to handily

  3. Magnetic excitations in (SiO 2)Co nano-composite films: Brillouin light scattering study

    NASA Astrophysics Data System (ADS)

    Stashkevich, A. A.; Roussigné, Y.; Stognij, A. I.; Novitskii, N. I.; Wurtz, G.; Zayats, A. V.; Viau, G.; Chaboussant, G.; Ott, F.; Lutsev, L. V.; Djemia, P.; Kostylev, M. P.; Belotelov, V.

    2009-04-01

    Behaviour of magnetic excitations in the Damon-Eshbach (DE) and backward volume (BV) geometries in nano-composite (SiO 2) 100-xCo x (50% at< x<80% at) films has been studied by Brillouin light scattering (BLS). It has been shown that it is the structure of Stokes/anti-Stokes BLS lines in the DE geometry that allows reliable identification of dipole-exchange spin waves (SW) and numerical estimation of the value of the effective exchange constant A eff of a super-ferromagnetic nano-granular sample ( x=80% at).

  4. TiO2 nanoparticles doped SiO2 films with ordered mesopore channels: a catalytic nanoreactor.

    PubMed

    Saha, Jony; Mitra, Anuradha; Dandapat, Anirban; De, Goutam

    2014-04-07

    Titanium dioxide (TiO2) incorporated ordered 2D hexagonal mesoporous silica (SiO2) films on a glass substrate were fabricated for use as a catalytic nanoreactor. Films were prepared using a tetraethyl orthosilicate (TEOS) derived SiO2 sol and a commercially available dispersion of TiO2 nanoparticles (NPs) in the presence of pluronic P123 as the structure directing agent. The effect of TiO2 doping (4-10 mol% with respect to the equivalent SiO2) into the ordered mesoporous SiO2 matrix was thoroughly investigated. The undoped SiO2 film showed a mesostructural transformation after heat-treatment at 350 °C whereas incorporation of TiO2 restricted such a transformation. Among all the TiO2 incorporated films, TEM showed that the 7 equivalent mol% TiO2 doped SiO2 film (ST-7) had an optimal composition which could retain the more organized 2D hexagonal (space group p6mm)-like mesostructures after heat-treatment. The catalytic activities of the TiO2 doped (4-10 mol%) films were investigated for the reduction of toxic KMnO4 in an aqueous medium. ST-7 film showed the maximum catalytic activity, as well as reusability. A TEM study on the resultant solution after KMnO4 reduction revealed the formation of MnO2 nanowires. It was understood that the embedded TiO2 NPs bonded SiO2 matrix increased the surface hydroxyl groups of the composite films resulting in the generation of acidic sites. The catalytic process can be explained by this enhanced surface acidity. The mesoporous channel of the ST-7 films with TiO2 doping can be used as a nanoreactor to form extremely thin MnO2 nanowires.

  5. Preparation and characterization of transparent hydrophilic photocatalytic TiO2/SiO2 thin films on polycarbonate.

    PubMed

    Fateh, Razan; Dillert, Ralf; Bahnemann, Detlef

    2013-03-19

    Transparent hydrophilic photocatalytic TiO2 coatings have been widely applied to endow the surfaces self-cleaning properties. A mixed metal oxide (TiO2/SiO2) can enhance the photocatalytic performance improving the ability of surface adsorption and increasing the amount of hydroxyl surface groups. The present work introduces a systematic study concerning the effect of the SiO2 addition to TiO2 films on the wettability, the photocatalytic activity, the adhesion strength, and the mechanical stability of the films. Transparent hydrophilic photocatalytic TiO2/SiO2 thin films were used to coat the polycarbonate (PC) substrate which was precoated by an intermediate SiO2 layer. The TiO2/SiO2 thin film was prepared employing a bulk TiO2 powder (Sachtleben Hombikat UV 100) and different molar ratios of tetraethoxysilane in acidic ethanol. A dip-coating process was used to deposit the films onto the polycarbonate substrate. The films were characterized by UV/vis spectrophotometry, FTIR spectroscopy, ellipsometry, BET, AFM, XRD, and water contact angle measurements. The mechanical stability and the UV resistance were examined. The photocatalytic activity of the coated surface was calculated from the kinetic analysis of methylene blue photodegradation measurements and compared with the photocatalytic activity of Pilkington Activ sheet glass. The coated surfaces displayed considerable photocatalytic activity and superhydrophilicity after exposure to UV light. The addition of SiO2 results in an improvement of the photocatalytic activity of the TiO2 film reaching the highest value at molar ratio TiO2/SiO2 equal to 1:0.9. The prepared films exhibit a good stability against UV(A) irradiation.

  6. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

    2016-10-01

    The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm‑2 · eV‑1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process.

  7. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

    PubMed Central

    Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

    2016-01-01

    The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm−2 · eV−1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process. PMID:27721493

  8. Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy.

    PubMed

    Tkachenko, Volodymyr; Marino, Antigone; Otón, Eva; Bennis, Noureddine; Otón, Josè Manuel

    2016-01-01

    Control of liquid crystal (LC) orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN) displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.

  9. Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

    PubMed Central

    Marino, Antigone; Otón, Eva; Bennis, Noureddine; Otón, Josè Manuel

    2016-01-01

    Control of liquid crystal (LC) orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN) displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles. PMID:28144524

  10. Surface acoustic wave properties of proton-exchanged LiNbO3 waveguides with SiO2 film.

    PubMed

    Kao, Kuo-Sheng; Cheng, Chien-Chuan; Chung, Chung-Jen; Chen, Ying-Chung

    2005-03-01

    Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.

  11. Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

    NASA Astrophysics Data System (ADS)

    King, David M.; Liang, Xinhua; Burton, Beau B.; Kamal Akhtar, M.; Weimer, Alan W.

    2008-06-01

    Pigment-grade TiO2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO2 and Al2O3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO2 films were deposited using tris-dimethylaminosilane (TDMAS) and H2O2 at 500 °C. Trimethylaluminum and water were used as precursors for Al2O3 ALD at 177 °C. The photocatalytic activity of anatase pigment-grade TiO2 was decreased by 98% after the deposition of 2 nm SiO2 films. H2SO4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO2 digest rate was 40 times faster for uncoated TiO2 than SiO2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H2O2 chemistry can deposit high quality, fully dense SiO2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO2 particles.

  12. An Interfacial Europium Complex on SiO2 Nanoparticles: Reduction-Induced Blue Emission System

    PubMed Central

    Ishii, Ayumi; Hasegawa, Miki

    2015-01-01

    In this study, Eu-coated SiO2 nanoparticles have been prepared, consisting of an interfacial complex of Eu and 1,10-phenanthroline (phen) at the solid surfaces of the SiO2/Eu nanostructures. The as-prepared SiO2/Eu/phen nanoparticles exhibits sharp red emission via energy transfer from the phen to the EuIII. After sintering at 200 °C in air, the emission is tuned from red to blue. The blue emission is originated from EuII. This reduction-induced emissive phenomenon resulted from the electron-donating environment created by the surrounding phen and SiO2, which is the first reported fabrication of a stable EuII-based emissive material using mild conditions (reaction in air and at low temperature) and an organic-inorganic hybrid nanostructure. The existence of two different stable oxidation states with characteristic emissions, blue emissive EuII and red emissive EuIII, suggests significant potential applications as novel luminescent materials with inorganic-organic hybrid structures. PMID:26122318

  13. Oxidation induced stress in SiO2/SiC structures

    NASA Astrophysics Data System (ADS)

    Li, Xiuyan; Ermakov, Alexei; Amarasinghe, Voshadhi; Garfunkel, Eric; Gustafsson, Torgny; Feldman, Leonard C.

    2017-04-01

    Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ˜108 Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ˜900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.

  14. Acid-Base Properties Of Glass Substrate And SiO2 - Bi2O3 Thin-Film Systems Obtained On It

    NASA Astrophysics Data System (ADS)

    Mal'chik, A. G.; Litovkin, S. V.; Filonov, A. V.; Ulyanova, O. V.; Gromov, V. E.

    2017-01-01

    The article describes an experimental research as a result of which SiO2 - Bi2O3 films have been synthesized of film-forming solutions based on tetraethoxysilane and bismuth nitrate (III). Acid-base properties of a glass substrate and SiO2 - Bi2O3 films obtained on it have been studied. The dependency of physical and chemical properties of SiO2 - Bi2O3 composites on their percentage composition have been revealed.

  15. Stochastic modeling of progressive breakdown in ultrathin SiO2 films

    NASA Astrophysics Data System (ADS)

    Miranda, E.; Cester, A.; Paccagnella, A.

    2003-12-01

    The breakdown dynamics of ultrathin SiO2 films in metal-oxide-semiconductor structures has been investigated. We show that the progressive increase of the leakage current that flows through the oxide when subjected to constant electrical stress can be modeled by the stochastic logistic differential equation. This approach relies on a time scale separation in which a deterministic term provides the S-shaped growth trajectory while a second term of the equation deals with the noisy behavior. Because of the inherent mean reverting property of the simulation process, the proposed model is also able to cover cases in which sudden upward and downward changes of the system's conductance are registered.

  16. Control of SiO2/Si interface defects generation during thin dielectric film etching using CHxFy/Ar/O2 plasma

    NASA Astrophysics Data System (ADS)

    Shigetoshi, Takushi; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya

    2015-06-01

    We investigated the quantitative control of SiO2/Si interface defects caused by CHxFy/Ar/O2 plasma etching. Both the number and the cause of interface defects generation strongly depended on the residual thicknesses of SiO2. When the residual thickness becomes small, in addition to the VUV/UV irradiation, ion injection caused a remarkable increase in the number of interface defects associated with Si dislocation. Complete recovery from damage was difficult by low-temperature thermal annealing, especially ion-induced damage. Ion-induced damage was suppressed by controlling the residual thickness of SiO2 to be larger than the ion penetration depth. VUV/UV-induces damage could be effectively suppressed by using a light shield layer such as SiN. Moreover, VUV/UV-induces damage under a fine space pattern is expected to be suppressed in comparison with a wide-open pattern. Thus, the process design of a film stack, pattern, etching condition, and thermal annealing condition are important for controlling SiO2/Si interface defect generation during plasma processing.

  17. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    NASA Astrophysics Data System (ADS)

    Chen, Le; Wang, Qing-Kang; Shen, Xiang-Qian; Chen, Wen; Huang, Kun; Liu, Dai-Ming

    2015-10-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation; finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm-800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances. Project supported by the National High-Tech Research and Development Program of China (Grant No. 2011AA050518), the University Research Program of Guangxi Education Department, China (Grant No. LX2014288), and the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2013GXNSBA019014).

  18. Analysis of long-term internal stress and film structure of SiO2 optical thin films.

    PubMed

    Nishikawa, Toshiyuki; Ono, Hiroi; Murotani, Hiroshi; Iida, Yoshitaka; Okada, Katsuhisa

    2011-03-20

    Recently, the demand for durability of optical thin films, which have long been used, has been growing as the performance of optical components improves. The stress of a film is an important parameter that is related to its adhesion. The electron beam (EB) and ion-assisted deposition (IAD) methods are widely used to fabricate optical thin films. However, there are few reports on long-term internal stress, despite the importance of this issue. Here we discuss the time dependence of the stress of SiO2 optical thin films in terms of optical characteristics in the infrared region. It was found that SiO2 thin films prepared by the EB and IAD methods exhibited compression stress. The Si-OH molecular bond was observed at around 930 cm(-1) in the Fourier transform infrared spectroscopy spectrum of the sample prepared by the EB method, which exhibited a large change in internal stress after an elapsed time. It is considered that this change in bonding was related to the decrease in the stress of the films.

  19. Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process.

    PubMed

    Vishwas, M; Rao, K Narasimha; Phani, A R; Arjuna Gowda, K V; Chakradhar, R P S

    2011-02-01

    Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (100) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (100). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature.

  20. Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums

    NASA Astrophysics Data System (ADS)

    Liu, Ling; Wang, Yue; Gong, Hao

    2001-07-01

    The annealing effects of 550 nm thick β-Ta films sputtered on Si and SiO2 substrates have been investigated under various vacuum conditions. Phase transformation from the tetragonal β-Ta into body-centered-cubic α-Ta of much higher conductivity occurred at annealing temperatures lower than 500 °C and 80% of β-Ta transformed into α-Ta after annealing at 600 °C for Ta on a Si substrate. For Ta on a SiO2 substrate, no phase transformation was observed at 500 °C annealing, and only 20% of β-Ta transformed into α-Ta at 600 °C. Oxygen diffusion into the Ta film at the interface of Ta/SiO2 could hinder β-Ta to α-Ta transformation. Both Ta on Si and Ta on SiO2 samples have smooth surfaces after annealing in 2×10-5 Torr. After annealing in a vacuum lower than 2×10-4 Torr, surface oxidation of the Ta thin films was detected. The increase of oxygen content in the Ta films caused higher compressive stress, and resulted in the film peeling in a serpentine pattern during annealing at 500 °C in 2×10-2 Torr for Ta on a SiO2 substrate. The Ta films cracked and detached from the SiO2 substrate after being annealed at 750 °C in 2×10-2 Torr. In contrast, no crack was found in Ta on Si, probably because of the relief of film stress due to more β-Ta being transformed into α-Ta during annealing. The residual oxygen and moisture in low vacuum may build up stress in Ta thin films during thermal processes, which can cause major reliability problems in electronic and other applications.

  1. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

    DOE PAGES

    Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

    2016-07-15

    Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similarmore » to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.« less

  2. Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials.

    PubMed

    Wu, Jean-Yee; Lee, Cheng-Chung

    2006-05-20

    Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

  3. Ultrafast coloring-bleaching performance of nanoporous WO3-SiO2 gasochromic films doped with Pd catalyst.

    PubMed

    Li, Dezeng; Wu, Guangming; Gao, Guohua; Shen, Jun; Huang, Fuqiang

    2011-12-01

    The gasochromic performance and durability of WO(3)-based films can be improved by doping SiO(2) particles within WO(3) matrix forming nanoporous supporting network and dispersing Pd catalyst inside films with enhanced catalytic activity. Nanoporous WO(3)-SiO(2) composite films loaded with Pd catalyst were prepared by sol-gel dip-coating process and served as an active chromogenic layer to fabricate a double-glazed gasochromic device. The structure, morphology, optical properties and gasochromic performance of WO(3)-SiO(2) films were fully investigated. The WO(3)-SiO(2) films exhibit excellent gasochromic performance with ultrafast coloring rate of 14.8% per second (%/s) (WO(3): 2.84%/s) and bleaching rate of 44.1%/s (WO(3): 7.18%/s). The transmittance changed between 17.8 and 74.6% during coloring-bleaching cycles, and totally reversibility and stability were achieved. © 2011 American Chemical Society

  4. Mechanism of charging of Au atoms and nanoclusters on Li doped SiO2/Mo(112) films.

    PubMed

    Martinez, Umberto; Giordano, Livia; Pacchioni, Gianfranco

    2010-02-01

    We present the results of supercell DFT calculations on the adsorption properties of Au atoms and small clusters (Au(n), n < or = 5) on a SiO(2)/Mo(112) thin film and on the same system modified by doping with Li atoms. The adsorbed Li atoms penetrate into the pores of the silica film and become stabilized at the interface where they donate one electron to the Mo metal. As a consequence, the work function of the Li-doped SiO(2)/Mo(112) film is reduced and results in modified adsorption properties. In fact, while on the undoped SiO(2)/Mo(112) film Au interacts only very weakly, on the Li-doped surface Au atoms and clusters bind with significant bond strengths. The calculations show that this is due to the occurrence of an electron transfer from the SiO(2)/Mo(112) interface to the adsorbed gold. The occurrence of the charge transfer is related to the work function of the support but also to the possibility for the silica film to undergo a strong polaronic distortion.

  5. Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

    PubMed Central

    Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

    2016-01-01

    This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

  6. Improved Performance by SiO2 Hollow Nanospheres for Silver Nanowire-Based Flexible Transparent Conductive Films.

    PubMed

    Zhang, Liwen; Zhang, Longjiang; Qiu, Yejun; Ji, Yang; Liu, Ya; Liu, Hong; Li, Guangji; Guo, Qiuquan

    2016-10-12

    Flexible transparent conductive films (TCFs) have attracted tremendous interest thanks to the rapid development of portable/flexible/wearable electronics. TCFs on the basis of silver nanowires (AgNWs) with excellent performance are becoming an efficient alternative to replace the brittle transparent metal oxide. In this study, a promising method was developed by introducing SiO2 hollow nanospheres (SiO2-HNSs) into the film to significantly improve the performance of AgNW-based TCFs. Since SiO2-HNSs have opposite charges to AgNWs, the strong attraction had promoted a uniform distribution of AgNWs and made the distance between AgNWs closer, which could decrease the contact resistance greatly. The introduction of SiO2 layer remarkably enhanced the transmission of visible light and the conductivity. In addition, the TCFs constructed by AgNWs and SiO2-HNSs showed much higher thermal stability and adhesive force than those by only AgNWs. As an example, the transmission of AgNW/SiO2-HNS-coated poly(ethylene terephthalate) (PET) could increase about 14.3% in comparison to AgNW-coated PET. Typically, a AgNW/SiO2-HNS-based TCF with a sheet resistance of about 33 Ω/sq and transmittance of about 98.0% (excluding substrate) could be obtained with excellent flexibility, adhesion, and thermal stability. At last some devices were fabricated.

  7. THz pulse generation using a contact grating device composed of TiO2/SiO2 thin films on LiNbO3 crystal

    NASA Astrophysics Data System (ADS)

    Yoshida, Fumiko; Nagashima, Keisuke; Tsubouchi, Masaaki; Maruyama, Momoko; Ochi, Yoshihiro

    2016-11-01

    We developed a new contact grating device for terahertz (THz) pulse generation by optical rectification. The device was made from polycrystalline rutile TiO2 thin film in the grating region and an amorphous SiO2 layer deposited on a Mg-doped LiNbO3 crystal. Our calculations indicated that the TiO2 grating on the SiO2 layer would yield an increase in diffraction efficiency of up to 0.69. The prepared TiO2 thin film had a sufficient laser induced damage threshold (140 GW/cm2) to enable effective THz pulse generation. Using a prototype device, we demonstrated THz pulse generation and investigated the phase-matching conditions experimentally.

  8. Solution-processed crack-free oxide films formed using SiO2 nanoparticles and organoalkoxysiloxane precursors

    NASA Astrophysics Data System (ADS)

    Na, Moonkyong; Rhee, Shi-Woo

    2015-07-01

    Crack-free uniform oxide films were deposited by spin-on-glass method using a mixture solution of organoalkoxysiloxane network former and SiO2 nanoparticles. In the range of molar ratio of SiO2 nanoparticles to oragnoalkoxysiloxanes between 0.6:1 and 1:1, stable sols were formed and smooth and uniform oxide films could be obtained. Fourier-transform infrared (FT-IR) spectroscopy was used to investigate the chemical properties of the films, and we found that Sisbnd Osbnd Si structures were effectively formed via condensation reactions during curing at 150 °C. The effect of three different organic side groups in the organoalkoxsiloxane on the film properties was investigated. Precursors containing methyl groups effectively formed Sisbnd Osbnd Si network with SiO2 nanoparticles, which was confirmed by the increased intensity of the Sisbnd O asymmetric stretching mode at 1080 cm-1 in the FT-IR spectra. Smooth and continuous films were obtained using precursors containing methyl and phenyl groups, with root-mean-square surface roughness of 1.05 nm (methyl precursor) and 1.16 nm (phenyl precursor). The shrinkage of the oxide film formed with phenyl groups was less than 1%. The dielectric properties of the oxide films were characterized, and we observed leakage currents in the range of 10-9 to 10-8 A/cm2 just prior to the dielectric breakdown with the films formed using precursors containing methyl and phenyl groups

  9. Optical and Structural Properties of Si Nanocrystals in SiO2 Films

    PubMed Central

    Nikitin, Timur; Khriachtchev, Leonid

    2015-01-01

    Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas. PMID:28347028

  10. [Influence of SiO2 films on color reproduction of Ni-Cr alloy porcelain crowns].

    PubMed

    Wu, Dong; Feng, Yunzhi

    2011-08-01

    To study whether SiO2 films will influence the color of Ni-Cr metal ceramic restorations. For the film plating experimental group, Sol-gel method was employed to apply SiO2 films to the surface of the Ni-Cr copings, while no coating was applied for the non-film-plating control group. Veneering porcelains were then applied subsequently, and a total of 12 B2-colored maxillary incisor metal ceramic crowns were fabricated with 6 crowns in each group. A ShadeEye Ncc computer-aided colorimeter was employed to measure the shade of the samples, as well as 6 B2(Vitapan classical vita color tabs) shade standards. The color was expressed as C1E-1976-Lab coordinates. There was a statistically significant color difference between all metal ceramic crowns and the B2 shade standards (delta E>1.5). The L*, a*, b* values of all crowns were higher than those of the B2 shade standards, and the crowns were typically yellower or redder. While neither significant color difference nor difference in shade values was observed between the film plating experimental group and non-film-plating control group (delta E<1.5). SiO2 films applied to the Ni-Cr copings by means of Sol-gel technique do not impact the final color of the metal ceramic restorations.

  11. Superconducting properties of nano-sized SiO2 added YBCO thick film on Ag substrate

    NASA Astrophysics Data System (ADS)

    Almessiere, Munirah Abdullah; Al-Otaibi, Amal lafy; Azzouz, Faten Ben

    2017-10-01

    The microstructure and the flux pinning capability of SiO2-added YBa2Cu3Oy thick films on Ag substrates were investigated. A series of YBa2Cu3Oy thick films with small amounts (0-0.5 wt%) of nano-sized SiO2 particles (12 nm) was prepared. The thicknesses of the prepared thick films was approximately 100 µm. Phase analysis by x-ray diffraction and microstructure examination by scanning electron microscopy were performed and the critical current density dependence on the applied magnetic field Jc(H) and electrical resistivity ρ(T) were investigated. The magnetic field and temperature dependence of the critical current density (Jc) was calculated from magnetization measurements using Bean's critical state model. The results showed that the addition of a small amount (≤0.02 wt%) of SiO2 was effective in enhancing the critical current densities in the applied magnetic field. The sample with 0.01 wt% of added SiO2 exhibited a superconducting characteristics under an applied magnetic field for a temperature ranging from 10 to 77 K.

  12. Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film

    NASA Astrophysics Data System (ADS)

    Fu, Qianyu; Gao, Yuhan; Li, Dongsheng; Yang, Deren

    2016-05-01

    In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.

  13. Epitaxial Growth of Silicon Films on SiO2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Duan, Chunyan; Deng, Youjun; Ai, Bin; Liu, Chao; Zhuang, Lin; Shen, Hui

    2012-09-01

    In order to investigate the effect of selective area nucleation on epitaxial growth of silicon (Si) films, 35 µm thick Si films were deposited by atmospheric pressure chemical vapor deposition (APCVD) under the standard condition on two kinds of SiO2 patterned Si(100) wafers. One was circular patterns, and the other was striated patterns. Then, the structural properties of the as-deposited silicon thin films were investigated by metallurgical microscope, scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The results show that normal epitaxial growth occurs on the exposed Si(100) regions, while just polycrystalline Si deposition happens on the SiO2 regions. Moreover, for the substrates with circular patterns, the as-deposited Si thin films possess pyramid surface morphology thus excellent light trapping performance being spontaneously formed, and the sizes of the pyramid grains approximately equal to the sum of the diameter and spacing of the round exposed Si regions.

  14. Laser-induced damage of TiO2/SiO2 high reflector at 1064 nm

    NASA Astrophysics Data System (ADS)

    Yao, Jianke; Ma, Jianyong; Xiu, Cheng; Fan, Zhengxiu; Jin, Yunxia; Zhao, Yuanan; He, Hongbo; Shao, Jianda; Huang, Huolin; Zhang, Feng; Wu, Zhengyun

    2008-04-01

    A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064nm with a 12ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR.

  15. High speed deposition of SiO2 film by slot-type microwave CVD system

    NASA Astrophysics Data System (ADS)

    Toyoda, Hirotaka; Yamamoto, Masaki; Suzuki, Haruka

    2016-09-01

    High density microwave plasma is attractive because of its ability for high-throughput processing. So far, we have successfully produced large-area surface wave excited plasma (SWP) and have applied it to plasma-enhanced chemical vapor deposition (PE-CVD) of silicon films. However, the SWP requires a dielectric plate for the surface wave propagation, and high density plasma sometimes erodes the dielectric plate to produce oxygen contamination. To avoid such problem, we propose the PE-CVD using the microwave plasma produced inside slots of a waveguide without using the dielectric plate. A 2.45 GHz pulsed microwave (repetition: 20 kHz, duty ratio: 20%, average power: 40 W) is introduced to a rectangular waveguide through an isolator, a tuner, and a vacuum window. A slot of 4 mm in length and 0.2 mm in width is placed at the end of the waveguide, and is connected to a vacuum chamber. Both the waveguide and the chamber are evacuated by a turbomolecular pump. Oxygen and tetraethyl orthosilicate (TEOS) gases are introduced from the waveguide and from the outside of the waveguide, respectively, to deposit SiO2 film on Si substrates at a pressure of 15 Torr and a slot-substrate distance of 1.1 cm. Deposition rate as high as 80 nm/s is observed at a TEOS flow rate of 0.8 sccm. The result suggests that the present PE-CVD system is promising as a new high-speed film deposition technique. Part of this work is supported by JSPS KAKENHI Grant Number 25286079.

  16. Recrystallization of Ge thin film on SiO2 substrates using a two-step annealing process

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Lee, Jaejun; Park, Youn Ho; Park, Jeong Min; Do, Hong Kyeong; Kim, Yeon Joo; Choi, Heon-Jin

    2017-01-01

    The fabrication of high-quality crystalline germanium thin films (GeTF) on an amorphous SiO2 layer is crucial for the realization of high performance-, low cost III-V solar cells used in many applications. Herein, we report the growth of a high-quality crystalline GeTF on SiO2/Si substrates using an ultra-vacuum chemical vapor deposition (UHV-CVD) method. GeTF was grown on the SiO2 layer using a two-step growth and multi-annealing processes. The fabrication method involved the deposition of a 1st seeding layer, annealing, and deposition of a 2nd main layer followed by three times of cyclic annealing. The crystallization of the seeding layer having a thickness of less than 10 nm could be ascribed to the evolution of polycrystalline structures in the main layer. The cyclic annealing performed after the deposition of the main layer is also found to be crucial for the formation of single crystalline, high-quality Ge films on SiO2 substrates with <311> direction. The cyclic annealing results in a further reduction of the defects, thereby threading dislocations significantly to a density of 5.311 × 107 cm-2. Electrical measurements using the van der Pauw method revealed that the GeTF exhibits p-type characteristics and a high mobility of 360.10 cm2/Vs at room temperature. [Figure not available: see fulltext.

  17. Thermal oxidation of amorphous germanium thin films on SiO2 substrates

    NASA Astrophysics Data System (ADS)

    de los Santos Valladares, L.; Bustamante Dominguez, A.; Ionescu, A.; Brown, A.; Sepe, A.; Steiner, U.; Avalos Quispe, O.; Holmes, S.; Majima, Y.; Langford, R.; Barnes, C. H. W.

    2016-12-01

    In this work we report the thermal oxidation of amorphous germanium (a-Ge) thin films (140 nm thickness) in air. Following fabrication by conventional thermal evaporation on SiO2 substrates, the samples were annealed in air at different temperatures ranging from 300 to 1000 °C. By means of x-ray diffraction, x-ray reflectivity, synchrotron grazing-incidence wide-angle x-ray scattering and cross-sectional transmission electron microscopy analysis it is found that the a-Ge films abruptly crystallize at 475 °C, while simultaneously increasing the thickness of the oxide (GeO2) in a layer by layer fashion. X-ray photoemission spectroscopy reveals that the oxidation state of the Ge atoms in the GeO2 layer is 4+. However, a reaction at the GeO2/Ge interface occurs between 500 and 550 °C reducing the oxide layer to GeO x (x < 2) and containing Ge2+ and Ge+. The thickness of the oxide layer grows with the annealing temperature following an Arrhenius behavior with an activation energy of 0.82 ± 0.09 eV up to 500 °C. Remarkably, we observed simultaneous enhancement of the oxidation and crystallization of the a-Ge in the temperature interval 450 °C-500 °C, in which the oxidation rate reaches a maximum of around 0.8 nm °C-1 at around 500 °C.

  18. Synthesis and Characterization of TiO2/SiO2 Thin Film via Sol-Gel Method

    NASA Astrophysics Data System (ADS)

    Halin, D. S. C.; Abdullah, M. M. A. B.; Mahmed, N.; Malek, S. N. A. Abdul; Vizureanu, P.; Azhari, A. W.

    2017-06-01

    TiO2/SiO2 thin films were prepared by sol-gel spin coating method. Structural, surface morphology and optical properties were investigated for different annealing temperatures at 300°C, 400°C and 500°C. X-ray diffraction pattern show that brookite TiO2 crystalline phase with SiO2 phase presence at 300°C. At higher temperatures of 400-500°C, the only phase presence was brookite. The surface morphology of film was characterized by scanning electron microscopy (SEM). The films annealed at 300°C shows an agglomeration of small flaky with crack free. When the temperature of annealing increase to 400-500°C, the films with large flaky and large cracks film were formed which was due to surface tension between the film and the air during the drying process. The UV-Vis spectroscopy shows that the film exhibits a low transmittance around 30% which was due to the substrate is inhomogeneously covered by the films. In order to improve the coverage of the film on the substrate, it has to repeatable the spin coating to ensure the substrate is fully covered by the films.

  19. Nanostructured Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel thin films for integrated optics

    NASA Astrophysics Data System (ADS)

    Predoana, Luminita; Preda, Silviu; Anastasescu, Mihai; Stoica, Mihai; Voicescu, Mariana; Munteanu, Cornel; Tomescu, Roxana; Cristea, Dana

    2015-08-01

    The nanostructured multilayer silica-titania or silica-titania-alumina films doped with Er3+ were prepared by sol-gel method. The sol-gel method is a flexible and convenient way to prepare oxide films on several types of substrates, and for this reason it was extensively investigated for optical waveguides fabrication. The selected molar composition was 90%SiO2-10%TiO2 or 85%SiO2-10%TiO2-5% Al2O3 and 0.5% Er2O3. The films were characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), Spectroellipsometry (SE), as well as by Atomic Force Microscopy (AFM) and photoluminescence (PL). The films deposited on Si/SiO2 substrate by dip-coating or spin-coating, followed by annealing at 900 °C, presented homogenous and continuous surface and good adherence to the substrate. Differences were noticed in the structure and properties of the prepared films, depending on the composition and the number of deposited layers. Channel optical waveguides were obtained by patterning Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel layers deposited on oxidized silicon wafers.

  20. Density relative change and interface zone mutual diffusion of BiFeO3 films prepared on Si (1 0 0), SiO2 and SiO2/Si (1 0 0)

    NASA Astrophysics Data System (ADS)

    Xiao, RenZheng; Wang, ZeSong; Yuan, XianBao; Zhou, JianJun; Mao, ZhangLiang; Su, HuaShan; Li, Bo; Fu, DeJun

    2016-10-01

    The mutual diffusion taken place in the interface zone between BiFeO3 (BFO) films and substrates (Si (1 0 0), SiO2 and SiO2/Si (1 0 0)) has been revealed by energy dispersive X-ray spectroscopy (EDS) and Rutherford Backscattering Spectrometry (RBS). RBS spectra provide the relative atomic concentrations of Bi, Fe, Si, and O elements changed with the samples' depth as analyzed by RBS spectra fitting SIMNRA software. A certain width of the intermixing layer is probably formed between BFO films and individual substrate which is attributed to mutual diffusion in the interface zone during annealing process. The mechanism of concerted exchange component can explain the interface zone mutual diffusion phenomenon between BFO films and substrates. The width of the interface zone between BFO film and Si (1 0 0), SiO2, and SiO2/Si (1 0 0) substrate is about 1.94 × 1017, 2.01 × 1017 and 3.05 × 1017 atoms/cm2, respectively, which are equivalent to 30.9, 36.7, and 52.9 nm, respectively. It has been declared that the effect on density relative to BFO film is loosen or attenuation is presented in the interface zone, which can be interpreted as a migration or diffusion of various atoms during the annealing. This can also provide an evidence of atomic dynamics and defect engineering on interface diffusion.

  1. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

    NASA Astrophysics Data System (ADS)

    Zhu, Li Qiang; Sun, Jia; Wu, Guo Dong; Zhang, Hong Liang; Wan, Qing

    2013-02-01

    Phosphorus (P)-doped nanogranular SiO2 films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10-4 S cm-1 is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO2/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >107. Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO2 shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

  2. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.

    PubMed

    Zhu, Li Qiang; Sun, Jia; Wu, Guo Dong; Zhang, Hong Liang; Wan, Qing

    2013-03-07

    Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

  3. SiO2 Film Etching Process Using Environment-Friendly New Gas C5F7H

    NASA Astrophysics Data System (ADS)

    Miyawaki, Yudai; Takeda, Keigo; Ito, Azumi; Nakamura, Masahiro; Sekine, Makoto; Hori, Masaru

    2009-10-01

    With the continuous miniaturization of semiconductor memory devices, a much precise etching process for a high aspect ratio contact hole in SiO2 film is indispensable. Furthermore, deterioration of the SiO2 selectivity over a fragile, thin ArF photoresist would cause the sidewall roughness and poor pattern-width definition. In this study, we utilized a newly designed C5F7H gas. We compared the etch performances between the new gas and conventional C5F8 . Ar and O2 were introduced with the each fluorocarbon gas to controll the etching rate. A dual frequency (60 MHz / 2 MHz) capacitively coupled plasma was employed. The SiO2 etching rate and selectivity to ArF photoresist were investigated as a function of O2 flow rate. The maximum selectivity of only 3.7 and the SiO2 etching rate of 416 nm/min were obtained at O2 flow rate of 20 sccm for the C5F8/O2/Ar plasma. For the newly developed C5F7H/O2/Ar plasma, the maximum selectivity of 13.5 with the etching rate of 356 nm/min was achieved at 25-sccm O2 flow rate. From these results, it was confirmed that almost four times higher selectivity than that of the conventional C5F8 gas was obtained by using the new C5F7H gas.

  4. Diffraction Properties of Volume Holograms Recorded in SiO2 Nanoparticle-Dispersed Methacrylate Photopolymer Films

    NASA Astrophysics Data System (ADS)

    Suzuki, Naoaki; Tomita, Yasuo

    2003-08-01

    We report on holographic recording in the green with high diffraction efficiency and recording sensitivity in SiO2 nanoparticle-dispersed methacrylate photopolymer films. Dynamics of diffraction efficiencies and refractive index changes are measured for several SiO2 nanoparticle concentrations and grating spacings. Overmodulation phenomena in the diffraction efficiency are observed in films with the effective thickness of ˜32 μm and high nanoparticle concentrations. It is confirmed that the performance of this material system as holographic recording media is comparable to that of recently reported methacrylate photopolymers doped with TiO2 nanoparticles [N. Suzuki, Y. Tomita and T. Kojima: Appl. Phys. Lett. 81 (2002) 4121].

  5. Nanodimple Arrays Fabricated on SiO2 Surfaces by Wet Etching through Block Copolymer Thin Films

    NASA Astrophysics Data System (ADS)

    Watanabe, Ryoko; Kamata, Kaori; Iyoda, Tomokazu

    2008-06-01

    Block copolymer thin films are promising nanotemplates because highly ordered periodic structures are spontaneously formed through microphase separation on a deca-nanometer scale and over a large area. An amphiphilic block copolymer, which consists of poly(ethylene oxide) (PEO) and poly(methacrylate) (PMA) with azobenzene mesogens and is denoted by PEOm-b-PMA(Az)n, indicates a strong chemical contrast between the corresponding microdomains, which offer structurally reliable nanotemplates for fabricating nanostructured materials. Thermally annealing a PEOm-b-PMA(Az)n thin film provides hexagonally arranged, perpendicularly oriented PEO cylinders, which perform as ion-conductive nanochannels. In this study, a SiO2 layer on a silicon wafer substrate is etched by NH4F through a PEO114-b-PMA(Az)54 thin film as a nanomask. The SiO2 layer is patterned with a 24-nm-periodic hexagonally arranged nanodimple array. Atomic force microscope (AFM), field emission scanning electron microscope (FESEM), and cross-sectional transmission electron microscope (TEM) observations reveal that the nanodimple array has a 2-nm depth and is spread over the entire SiO2 surface on centimeter scale.

  6. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    NASA Astrophysics Data System (ADS)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  7. Shift in room-temperature photoluminescence of low-fluence Si(+)-implanted SiO2 films subjected to rapid thermal annealing.

    PubMed

    Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

    2008-12-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si(+) ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×10(16) cm(-2) shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices.

  8. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

    PubMed Central

    Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

    2008-01-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices. PMID:27878029

  9. Preparation of Ag/TiO2/SiO2 films via photo-assisted deposition and adsorptive self-assembly for catalytic bactericidal application

    NASA Astrophysics Data System (ADS)

    Xi, Baojuan; Chu, Xiaona; Hu, Jiangyong; Bhatia, Charanjit Singh; Danner, Aaron James; Yang, Hyunsoo

    2014-08-01

    The deterioration of water supply quality due to the waterborne bacteria is an environmental problem requiring the urgent attention. Due to the excellent and synergic antimicrobial capability, Ag-loaded TiO2 photocatalyst emerges as a feasible measure to guard the water. In our work, Ag nanoparticles have been prepared by the photoassisted reduction of AgNO3 on the TiO2 film fabricated by solution-based adsorptive self-assembly approach. The role of surfactant on the growth rate and size controlling of particles is also studied. In this connection, different kinds of surfactants, such as PVP, Tween-20, Tween-40 and so on, are applied in the system to investigate the formation of Ag nanoparticles. The surface profile and elemental analysis of Ag/TiO2/SiO2 films are examined by scanning electron microscopy and attached energy-dispersive X-ray spectroscopy, respectively. In the anti-bacteria detection, Ag nanoparticles are found to enhance the bactericidal efficiency strongly comparing with the pure TiO2 film under the same condition. In addition, by comparison with Ag/TiO2/SiO2 film in the dark environment as the reference experiment, UV-visible light plays a vital role in the improved bactericidal behavior, demonstrating the more efficient charge separation induced by metal silver. Because of the versatility of the method, the present photoreductive route is also exploited for the synthesis of Au nanoparticles on TiO2/SiO2 films. The corresponding photocatalytical detection results demonstrate the loading of Au nanoparticles can improve the photodegradation efficiency of methyl orange assigned to the similar electron-trapping effect to silver.

  10. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

    2017-05-01

    The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

  11. Electronic sputtering of thin SiO 2 films by MeV heavy ions

    NASA Astrophysics Data System (ADS)

    Arnoldbik, W. M.; Tomozeiu, N.; Habraken, F. H. P. M.

    2003-04-01

    The rate of removal of material from SiO 2 as a result of heavy ion irradiation, with energies in which energy loss via excitation and ionization of the solid predominates, depends strongly on the stopping power and angle of incidence of the incoming ions. There appears to be a threshold stopping power for SiO 2 of 500 eV/(10 15 at/cm 2) (or 3.5 keV/nm). This electronic sputter yield has been found to reach values as large as 10 4 atoms/incoming ion for 66 MeV Ag ions at an angle of incidence of 7° with the plane of the surface. Strikingly, the electronic sputter yield is very small for thin SiO 2 layers of a thickness ⩽1 nm when grown on c-Si, but it is appreciable for such layers deposited on the insulator silicon nitride. The data are discussed in the light of existing models for electronic sputtering invoking also models for potential sputtering of SiO 2 by low-energy, highly charged ions.

  12. Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films

    PubMed Central

    Zhao, Y.; Jenkins, M.; Measor, P.; Leake, K.; Liu, S.; Schmidt, H.; Hawkins, A. R.

    2011-01-01

    A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si3N4, the photoluminescence background of Ta2O5 based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12. PMID:21448254

  13. Hollow waveguides with low intrinsic photoluminescence fabricated with Ta(2)O(5) and SiO(2) films.

    PubMed

    Zhao, Y; Jenkins, M; Measor, P; Leake, K; Liu, S; Schmidt, H; Hawkins, A R

    2011-02-28

    A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta(2)O(5) and SiO(2) films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO(2) and sputtered Ta(2)O(5) provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si(3)N(4), the photoluminescence background of Ta(2)O(5) based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.

  14. Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films

    NASA Astrophysics Data System (ADS)

    Zhao, Y.; Jenkins, M.; Measor, P.; Leake, K.; Liu, S.; Schmidt, H.; Hawkins, A. R.

    2011-02-01

    A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si3N4, the photoluminescence background of Ta2O5 based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.

  15. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  16. Well-organized meso-macroporous TiO2/SiO2 film derived from amphiphilic rubbery comb copolymer.

    PubMed

    Jeon, Harim; Lee, Chang Soo; Patel, Rajkumar; Kim, Jong Hak

    2015-04-15

    We report the facile synthesis of a well-organized meso-macroporous TiO2/SiO2 thin film with high porosity and good interconnectivity from a binary mixture (i.e., titania precursor and polymer template). Our process is based on self-assembly of the amphiphilic rubbery comb copolymer, poly(dimethylsiloxane)-g-poly(oxyethylene methacrylate) (PDMS-g-POEM) with titanium tetraisopropoxide (TTIP). SiO2 is self-provided by thermal oxidation of PDMS chains during calcination under air. The selective, preferential interaction between TTIP and the hydrophilic POEM chains was responsible for the formation of well-organized TiO2/SiO2 films, as supported by transmission electron microscopy, scanning electron microscopy, X-ray photospectroscopy, and X-ray diffraction analyses. We investigated in detail the effect of precursor content, solvent type, and polymer concentration on thin film morphology. Photodegradation of methyl orange by the well-organized meso-macroporous TiO2/SiO2 film was greater than that of a dense TiO2 film prepared without PDMS-g-POEM as well as a SiO2-etched TiO2 film. These results indicate that the well-organized structure and SiO2 doping of the TiO2 film play a pivotal role in enhancing its photocatalytic properties.

  17. Synthesis of mesoporous TiO2/SiO2 hybrid films as an efficient photocatalyst by polymeric micelle assembly.

    PubMed

    Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Hwang, Soo Min; Sun, Ziqi; Kim, Jung Ho; Dou, Shi Xue; Yamauchi, Yusuke

    2014-05-12

    Thermally stable mesoporous TiO2/SiO2 hybrid films with pore size of 50 nm have been synthesized by adopting the polymeric micelle-assembly method. A triblock copolymer, poly(styrene-b-2-vinyl pyridine-b-ethylene oxide), which serves as a template for the mesopores, was utilized to form polymeric micelles. The effective interaction of titanium tetraisopropoxide (TTIP) and tetraethyl orthosilicate (TEOS) with the polymeric micelles enabled us to fabricate stable mesoporous films. By changing the molar ratio of TEOS and TTIP, several mesoporous TiO2/SiO2 hybrid films with different compositions can be synthesized. The presence of amorphous SiO2 phase effectively retards the growth of anatase TiO2 crystal in the pore walls and retains the original mesoporous structure, even at higher temperature (650 °C). These TiO2/SiO2 hybrid films are of very high quality, without any cracks or voids. The addition of SiO2 phase to mesoporous TiO2 films not only adsorbs more organic dyes, but also significantly enhances the photocatalytic activity compared to mesoporous pure TiO2 film without SiO2 phase.

  18. Incorporation and thermal evolution of rhodamine 6G dye molecules adsorbed in porous columnar optical SiO2 thin films.

    PubMed

    Sánchez-Valencia, Juan R; Blaszczyk-Lezak, Iwona; Espinós, Juan P; Hamad, Said; González-Elipe, Agustín R; Barranco, Angel

    2009-08-18

    Rhodamine 6G (Rh6G) dye molecules have been incorporated into transparent and porous SiO2 thin films prepared by evaporation at glancing angles. The porosity of these films has been assessed by analyzing their water adsorption isotherms measured for the films deposited on a quartz crystal monitor. Composite Rh6G/SiO2 thin films were prepared by immersion of a SiO2 thin film into a solution of the dye at a given pH. It is found that the amount of Rh6G molecules incorporated into the film is directly dependent on the pH of the solution and can be accounted for by a model based on the point of zero charge (PZC) concepts originally developed for colloidal oxides. At low pHs, the dye molecules incorporate in the form of monomers, while dimers or higher aggregates are formed if the pH increases. Depending on the actual preparation and treatment conditions, they also exhibit high relative fluorescence efficiency. The thermal stability of the composite films has been also investigated by characterizing their optical behavior after heating in an Ar atmosphere at increasing temperatures up to 275 degrees C. Heating induces a progressive loss of active dye molecules, a change in their agglomeration state, and an increment in their relative fluorescence efficiency. The obtained Rh6G/SiO2 composite thin films did not disperse the light and therefore can be used for integration into optical and photonic devices.

  19. Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface.

    PubMed

    Cheng, Xinbin; Jiao, Hongfei; Lu, Jiangtao; Ma, Bin; Wang, Zhanshan

    2013-06-17

    The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.

  20. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    DOE PAGES

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; ...

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2more » film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  1. Sol-gel SiO2 film contained Au/SiO2/quantum dot core/shell/shell nanostructures with plasmonic enhanced photoluminescence.

    PubMed

    Yang, Ping; Zhang, Lipeng; Wang, Yingzi

    2012-12-01

    A sol-gel method has been developed to fabricate functional silica film with Au/SiO2/quantum dot (QD) core/shell/shell nanostructures which exhibited plasmonic enhanced photoluminescence (PL). Au nanoparticles (NPs) were homogeneously coated with a SiO2 shell by an optimal Stöber synthesis. Hydrophobic CdSe/ZnS QDs was transferred into water phase via a ligand exchange by a thin functional SiO2 layer consisted of partially hydrolyzed 3-aminopropyltrimethoxysilane (APS) sol. The Au/SiO2/QD core/shell/shell nanostructure was created by assembling the functional SiO2-coated QDs to the SiO2-coated Au NPs while QDs transferred into water phase. Those partially hydrolyzed APS molecules play an important role for the connection between the QDs and SiO2-coated Au NPs. The Au/SiO2/QD core/shell/shell nanostructures were embedded in functional sol-gel SiO2 films fabricated via spinning and dipping coating, in which the film revealed strong surface plasmon scattering and enhanced PL. Because of the dual functionality, the film is utilizable for various applications including biological and medical sensors, optical devices, and solar cells. This technique can serve as a general route for encapsulating a variety of nanomaterials in sol-gel films.

  2. Patterned ion beam implantation of Co ions into a SiO2 thin film via ordered nanoporous alumina masks.

    PubMed

    Guan, Wei; Ghatak, Jay; Peng, Yong; Peng, Nianhua; Jeynes, Chris; Inkson, Beverley; Möbus, Günter

    2012-02-03

    Spatially patterned ion beam implantation of 190 keV Co(+) ions into a SiO(2) thin film on a Si substrate has been achieved by using nanoporous anodic aluminum oxide with a pore diameter of 125 nm as a mask. The successful synthesis of periodic embedded Co regions using pattern transfer is demonstrated for the first time using cross-sectional (scanning) transmission electron microscopy (TEM) in combination with analytical TEM. Implanted Co regions are found at the correct relative lateral periodicity given by the mask and at a depth of about 120 nm.

  3. Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy

    NASA Astrophysics Data System (ADS)

    Watanabe, Heiji; Baba, Toshio; Ichikawa, Masakazu

    1999-05-01

    Local dielectric breakdown of ultrathin SiO2 films grown on silicon substrates has been investigated by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We found that STM observation can reveal individual quasibreakdown spots created by hot-electron injection into the oxide, as well as features of the topography such as atomic steps on the oxide surface. STS was used to study the local electrical properties of the oxide films before and after electrical stressing. We observed a leakage current at the quasibreakdown spots that passed through defect levels in the ultrathin oxide films. We also found that several tunneling spectra obtained from near leakage sites showed clear negative differential resistance. This phenomenon was attributed to the conductance change in the leakage path due to electron charging effects. Moreover, we confirmed the stressing polarity dependence of the leakage-site creation, and that atomic steps on the oxide and at the SiO2/Si interface did not cause any serous problem in the quasibreakdown process.

  4. Nonlinear optical performance of poled liquid crystalline azo-dyes confined in SiO2 sonogel films

    NASA Astrophysics Data System (ADS)

    Torres-Zúñiga, V.; Morales-Saavedra, O. G.; Rivera, E.; Flores-Flores, J. O.; Bañuelos, J. G.; Ortega-Martínez, R.

    2010-01-01

    The catalyst-free sonogel route was implemented to fabricate highly pure, optically active, hybrid azo-dye/SiO2-based spin-coated thin films deposited onto ITO-covered glass substrates. The implemented azo-dyes exhibit a push-pull structure; thus chromophore electrical poling was performed in order to explore their quadratic nonlinear optical (NLO) performance and the role of the SiO2 matrix for allowing molecular alignment within the sonogel host network. Morphological and optical characterizations were performed to the film samples according to atomic force microscopy (AFM), ultraviolet-visible (UV-Vis) spectroscopy and the Maker-fringe technique. Regardless of absence of a high glass transition temperature (T g) in the studied monomeric liquid crystalline azo-dyes, some hybrid films displayed stable NLO activity such as second harmonic generation (SHG). Results show that the chromophores were homogeneously embedded within the SiO2 sonogel network, where the guest-host molecular and mechanical interactions permitted a stable monomeric electrical alignment in this kind of environment.

  5. Sol–gel synthesis and photoluminescence of SiO2–Si:Er3+ nanocomposite films

    NASA Astrophysics Data System (ADS)

    Tuan, P. V.; Khiem, T. N.; Huy, P. T.

    2017-03-01

    In this work, we report on sol–gel synthesis and photoluminescence of SiO2–Si:Er3+ nanocomoposite films. The films were characterized by x-ray diffraction, field emission scanning electron microscope and photoluminescence measurements. We demonstrate that the incorporation of Si nanocrystals with sizes of 10–20 nm into the silica matrix resulted in strong Er-related PL in the infrared region peaking at 1535 nm and that the film can be well excited by non-resonant wavelengths (250–260 nm). The role of Si nanocrystals as sensitizers and the dependence of the Er-related PL on Er-doping concentration and annealing temperature are also discussed.

  6. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films

    NASA Astrophysics Data System (ADS)

    Castro, Celia; BenAssayag, Gérard; Pecassou, Béatrice; Andreozzi, Andrea; Seguini, Gabriele; Perego, Michele; Schamm-Chardon, Sylvie

    2017-01-01

    In this work, we investigate the ability to control Si nanoparticles (NPs) spatially arranged in a hexagonal network of 20 nm wide nanovolumes at controlled depth within SiO2 thin films. To achieve this goal an unconventional lithographic technique was implemented based on a bottom-up approach, that is fully compatible with the existing semiconductor technology. The method combines ultra-low energy ion beam synthesis with nanostructured block-copolymer thin films that are self-assembled on the SiO2 substrates to form a nanoporous template with hexagonally packed pores. A systematic analytical investigation using time of flight-secondary ion mass spectroscopy and low-loss energy filtered transmission electron microscopy demonstrates that by adjusting few fabrication parameters, it is possible to narrow the size distribution of the NPs and to control the number of NPs per nanovolume. Experimental results are critically discussed on the basis of literature data, providing a description of the mechanism involved in the formation of Si NPs.

  7. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage ofmore » 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

  8. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Tunable Anisotropic Absorption of Ag-Embedded SiO2 Thin Films by Oblique Angle Deposition

    NASA Astrophysics Data System (ADS)

    Xiao, Xiu-Di; Dong, Guo-Ping; Shao, Jian-Da; Fan, Zheng-Xiu; He, Hong-Bo; Qi, Hong-Ji

    2009-08-01

    Ag-embedded SiO2 thin films are prepared by oblique angle deposition. Through field emission scanning electron microscopy (SEM), an orientated slanted columnar structure is observed. Energy-dispersive x-ray (EDX) analysis shows the Ag concentration is about 3% in the anisotropic SiO2 matrix. Anisotropic surface plasma resonance (SPR) absorption is observed in the Ag-embedded SiO2 thin films, which is dependent on polarization state and incidence angle of two orthogonal polarized lights and the deposition angle. This means that optical properties and anisotropic SPR absorption can be tunable in Ag-embedded SiO2 thin films. Broadband polarization splitting is also observed and the transmission ratio Tp/Ts between p- and s-polarized lights is up to 2.7 for thin films deposited at α = 70°, which means that Ag-embedded SiO2 thin films are a promising candidate for thin film polarizers.

  9. Spin-Relaxation Dynamics of E' Centers at High Density in SiO2 Thin Films for Single-Spin Tunneling Force Microscopy

    NASA Astrophysics Data System (ADS)

    Ambal, K.; Payne, A.; Waters, D. P.; Williams, C. C.; Boehme, C.

    2015-08-01

    The suitability of the spin dynamics of paramagnetic silicon dangling bonds (E' centers) in high-E'-density amorphous silicon dioxide (SiO2 ) as probe spins for single-spin tunneling force microscopy (SSTFM) is studied. SSTFM is a spin-selection-rule-based scanning-probe single-spin readout concept. Following the synthesis of SiO2 thin films on (111)-oriented crystalline-silicon substrates with room-temperature stable densities of [E'] >5 ×1018 cm-3 throughout the 60-nm thin film, pulsed electron paramagnetic resonance spectroscopy is conducted on the E' centers at temperatures between T =5 K and T =70 K . The measurements reveal that the spin coherence (the transverse spin-relaxation time T2) of these centers is significantly shortened compared to low-E'-density SiO2 films and within error margins not dependent on temperature. In contrast, the spin-flip times (the longitudinal relaxation times T1) are dependent on the temperature but with much weaker dependence than low-density SiO2 , with the greatest deviations from low-density SiO2 seen for T =5 K . These results, discussed in the context of the spin-relaxation dynamics of dangling-bond states of other silicon-based disordered solids, indicate the suitability of E' centers in high-density SiO2 as probe spins for SSTFM.

  10. Effect of SiO2 grafted MWCNTs on the mechanical and dielectric properties of PEN composite films

    NASA Astrophysics Data System (ADS)

    Jin, Fei; Feng, Mengna; Huang, Xu; Long, Cheng; Jia, Kun; Liu, Xiaobo

    2015-12-01

    In this study, the functional poly (arylene ether nitrile) (PEN)/multiwall carbon nanotubes (MWCNTs)/SiO2 nanocomposite with high mechanical and good electrical properties were fabricated through a simple and effective method. Specifically, the surface modification using highly ordered and porous SiO2 not only improves the dispersion of the MWCNTs in polymer matrix, but also combines the excellent properties of SiO2 and MWCNTs. Transmission electron microscopy (TEM), Fourier transform infrared spectra (FTIR), and scanning electron microscope (SEM) were employed to confirm the surface functionalization of MWCNTs. As a result, all the composite films exhibited good dielectric properties with high dielectric constant of 7 as well as low dielectric loss of 0.04. Besides, the results of mechanical tests showed that the tensile strength and modulus reached their highest values at the 2 wt% MWCNTs-SiO2 loading content (125 MPa and 2950 MPa, respectively). The rheological results showed that MWCNTs-SiO2/PEN composites have a typical solid-like viscoelastic response as frequencies changes. Therefore, all the results revealed that surface functionalization has strong influence on the dispersion state of MWCNTs in PEN matrix.

  11. A polycrystalline SiO2 colloidal crystal film with ultra-narrow reflections.

    PubMed

    Fu, Qianqian; Chen, Ang; Shi, Lei; Ge, Jianping

    2015-04-30

    This work reported a high quality photonic crystal film with an ultra-narrow photonic bandgap obtained via a chemical synthetic route. The bandgap is much narrower than that of traditional colloidal crystals, which makes the film qualified for use in optical devices. The narrow PBG originates from not only the high crystallinity and uniform orientations of microcrystals within the film but also the very close refractive indices between the silica and the polymer matrix. Due to the matching of the refractive index, the amorphous contents of the film are optically transparent and do not interfere with the reflection, so that the photonic crystal film is tolerant of the existence of disordered contents.

  12. Sol-gel preparation and characterization of SiO2 coated VO2 films with enhanced transmittance and high thermochromic performance

    NASA Astrophysics Data System (ADS)

    Li, Dezeng; Shan, Yongkui; Huang, Fuqiang; Ding, Shangjun

    2014-10-01

    Vanadium dioxide (VO2) films prepared at low-temperature with a low cost are considerable for energy-saving applications. Here, SiO2 coated VO2 films with clearly enhanced visible transmittance by introducing antireflection coatings (ARCs) and excellent thermochromic performance were present. The VO2 films have been prepared via a stable and low-cost sol-gel synthesis route using vanadium pentaoxide powder as precursor, and their structural, morphological, optical and electrical properties and thermochromic performance were systemically characterized. The resistance of VO2 films varies by 4 orders of magnitude and the transmittance changes from 11.8% to 69.3% at 2500 nm while no significant deviation appears in the visible region during metal-insulator transition (MIT). Nanoporous SiO2 coating with good optical transparency was coated on the surface of VO2 film via sol-gel dip-coating technique to enhance its optical transmittance, and the visible transmittance is increased by 14.6% due to the significantly decreased reflectance. The critical transition temperature (63 °C) and infrared switching properties of VO2 films are not much deteriorated by applying SiO2 layer. The synergistic effect of antireflection and thermochromism on SiO2 coated VO2 films was investigated.

  13. Luminescence of Eu(3+) doped SiO2 Thin Films and Glass Prepared by Sol-gel Technology

    NASA Technical Reports Server (NTRS)

    Castro, Lymari; Jia, Weiyi; Wang, Yanyun; Santiago, Miguel; Liu, Huimin

    1998-01-01

    Trivalent europium ions are an important luminophore for lighting and display. The emission of (5)D0 to (7)F2 transition exhibits a red color at about 610 nm, which is very attractive and fulfills the requirement for most red-emitting phosphors including lamp and cathode ray phosphorescence materials. Various EU(3+) doped phosphors have been developed, and luminescence properties have been extensively studied. On the other hand, sol-gel technology has been well developed by chemists. In recent years, applications of this technology to optical materials have drawn a great attention. Sol-gel technology provides a unique way to obtain homogeneous composition distribution and uniform doping, and the processing temperature can be very low. In this work, EU(3+) doped SiO2 thin films and glasses were prepared by sol-gel technology and their spectroscopic properties were investigated.

  14. Luminescence of Eu(3+) doped SiO2 Thin Films and Glass Prepared by Sol-gel Technology

    NASA Technical Reports Server (NTRS)

    Castro, Lymari; Jia, Weiyi; Wang, Yanyun; Santiago, Miguel; Liu, Huimin

    1998-01-01

    Trivalent europium ions are an important luminophore for lighting and display. The emission of (5)D0 to (7)F2 transition exhibits a red color at about 610 nm, which is very attractive and fulfills the requirement for most red-emitting phosphors including lamp and cathode ray phosphorescence materials. Various EU(3+) doped phosphors have been developed, and luminescence properties have been extensively studied. On the other hand, sol-gel technology has been well developed by chemists. In recent years, applications of this technology to optical materials have drawn a great attention. Sol-gel technology provides a unique way to obtain homogeneous composition distribution and uniform doping, and the processing temperature can be very low. In this work, EU(3+) doped SiO2 thin films and glasses were prepared by sol-gel technology and their spectroscopic properties were investigated.

  15. Infrared interference coating by use of Si3N4 and SiO2 films with ion-assisted deposition.

    PubMed

    Lee, Cheng-Chung; Ku, Shih-Liang

    2010-01-20

    Silicon nitride (Si(3)N(4)) and silicon dioxide (SiO(2)) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 microm. The application of Si(3)N(4) and SiO(2) films on the IR interference coating is demonstrated.

  16. Nature of point defects on SiO2/Mo(112) thin films and their interaction with Au atoms.

    PubMed

    Martinez, Umberto; Giordano, Livia; Pacchioni, Gianfranco

    2006-08-31

    We have studied by means of periodic DFT calculations the structure and properties of point defects at the surface of ultrathin silica films epitaxially grown on Mo(112) and their interaction with adsorbed Au atoms. For comparison, the same defects have been generated on an unsupported silica film with the same structure. Four defects have been considered: nonbridging oxygen (NBO, [triple bond]Si-O(*)), Si dangling bond (E' center, [triple bond]Si(*)), oxygen vacancy (V(O), [triple bond]Si-Si[triple bond]), and peroxo group ([triple bond]Si-O-O-Si[triple bond]), but only the NBO and the V(O) centers are likely to form on the SiO(2)/Mo(112) films under normal experimental conditions. The [triple bond]Si-O(*) center captures one electron from Mo forming a silanolate group, [triple bond]Si-O(-), sign of a direct interaction with the metal substrate. Apart from the peroxo group, which is unreactive, the other defects bind strongly the Au atom forming stable surface complexes, but their behavior may differ from that of the same centers generated on an unsupported silica film. This is true in particular for the two most likely defects considered, the nonbridging oxygen, [triple bond]Si-O(*), and the oxygen vacancy, [triple bond]Si-Si[triple bond].

  17. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    PubMed

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  18. Fabrication and super-hydrophilic property of transparent TiO2/SiO2 film from sol-gel process

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Zhang, Yihe; Xu, Caiyun; Yu, Li; Lv, Fengzhu

    2012-04-01

    A series of transparent and super-hydrophilic TiO2/SiO2 composite films with high adhesion to the glass were fabricated by dipping methods. The sol was prepared using peroxotitanium complex (PTC) as precursor by sol-gel process at low temperature. The properties of transmittance, hydrophility and adhesion were characterized by ultraviolet-visible spectrophotometer, water contact angle and the tape test, and the structure was analyzed by Fourier transform infrared spectroscopy (FTIR). The relationship of structure, surfactant and the compound action of TiO2/SiO2 was investigated. The results indicated that the fabricated films achieved excellent transmittance to slide glass of over 90%. Because of the poor adhesion of pure TiO2 film, the TiO2/SiO2 composite film with polyvinyl alcohol (PVA) as the surfactant was prepared. The tape test indicated that the composite film had a steady adhesion on the surface of glass. At the same time, the water contact angle of the films was blow 5° after exposed to the UV light. Furthermore, the glass insulators with TiO2/SiO2 composite film were placed in the outdoor environment, and it showed self-cleaning ability after water drenching. It was proved from the experiments that the transparent TiO2/SiO2 hybrid films with self-cleaning property possessed potential application in the fields of outdoor glass constructions, suspended glass disk insulators and auto windshields.

  19. Fabrication and super-hydrophilic property of transparent TiO2/SiO2 film from sol-gel process

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Zhang, Yihe; Xu, Caiyun; Yu, Li; Lv, Fengzhu

    2011-11-01

    A series of transparent and super-hydrophilic TiO2/SiO2 composite films with high adhesion to the glass were fabricated by dipping methods. The sol was prepared using peroxotitanium complex (PTC) as precursor by sol-gel process at low temperature. The properties of transmittance, hydrophility and adhesion were characterized by ultraviolet-visible spectrophotometer, water contact angle and the tape test, and the structure was analyzed by Fourier transform infrared spectroscopy (FTIR). The relationship of structure, surfactant and the compound action of TiO2/SiO2 was investigated. The results indicated that the fabricated films achieved excellent transmittance to slide glass of over 90%. Because of the poor adhesion of pure TiO2 film, the TiO2/SiO2 composite film with polyvinyl alcohol (PVA) as the surfactant was prepared. The tape test indicated that the composite film had a steady adhesion on the surface of glass. At the same time, the water contact angle of the films was blow 5° after exposed to the UV light. Furthermore, the glass insulators with TiO2/SiO2 composite film were placed in the outdoor environment, and it showed self-cleaning ability after water drenching. It was proved from the experiments that the transparent TiO2/SiO2 hybrid films with self-cleaning property possessed potential application in the fields of outdoor glass constructions, suspended glass disk insulators and auto windshields.

  20. Nonlinear optical absorption and switching properties of gold nanoparticle doped SiO2-TiO2 sol-gel films.

    PubMed

    Venkatram, N; Kumar, R Sai Santosh; Rao, D Narayana; Medda, S K; De, Sucheta; De, Goutam

    2006-07-01

    The nonlinear optical absorption and switching properties of sol-gel derived of Au nanoparticle doped SiO2-TiO2 sol-gel films having different Au-surface plasmon absorption positions are reported in this paper. The Au nanoparticles are embedded in SiO2 and SiO2-TiO2 mixed glassy film matrices with different refractive index values. To study the nonlinear absorption properties, lasers with three different wavelengths are used. The optical switching behavior is studied by using the pump-probe technique with 532 nm as the excitation wavelength. Ground state conduction band, surface plasmon band, and the free carrier band are taken as three level model to explain theoretically the obtained RSA and SA behaviors.

  1. Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating

    NASA Astrophysics Data System (ADS)

    Dubey, R. S.; Jhansirani, K.; Singh, Shyam

    Thin film silicon solar cells are the better choice due to their low cost as compared to the crystalline solar cells. However, thin film silicon solar cells are suffering from a problem of weak absorption of incident light and hence, light trapping mechanism is essential for the harvesting of maximum solar radiation. In this paper, we present the performance of solar cell using an efficient back reflector composed of multilayer thin film (SiO2/Si3N4) and a diffraction grating. The use of a back reflector showed enhanced light absorption due to the folding of unabsorbed light coming to it after crossing the active region in a wide wavelength range. Further, the effect of active layer thickness and grating height were also discussed for the optimal performance of the solar cell. In the case of magnetic transverse mode, a relative enhancement in cell efficiency about 79 and 21% respectively have been observed with respect to a planar and SC4 solar cells.

  2. Optical, electrical and dielectric properties of TiO 2-SiO 2 films prepared by a cost effective sol-gel process

    NASA Astrophysics Data System (ADS)

    Vishwas, M.; Rao, K. Narasimha; Gowda, K. V. Arjuna; Chakradhar, R. P. S.

    2011-12-01

    Titanium dioxide (TiO 2) and silicon dioxide (SiO 2) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO 2 and SiO 2 respectively. The pure and composite films of TiO 2 and SiO 2 were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO 2 and SiO 2 sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO 2 films on p-silicon (1 0 0) substrates. The current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 °C for their possible use in optoelectronic applications.

  3. Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.

    PubMed

    Vishwas, M; Rao, K Narasimha; Gowda, K V Arjuna; Chakradhar, R P S

    2011-12-01

    Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications.

  4. Strain-induced growth of SiO2 dots by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu

    2003-01-01

    Silicon dioxide dots are deposited on the Si cap layers of self-assembled Ge dots using a liquid phase deposition method. The Si capping layer directly above the Ge dots has a tensile strain, while the Si cap on the wetting layer is not strained. The tensile strain can enhance the silicon dioxide nucleation and deposition on Si surface, and SiO2 dots are directly formed on the top of Ge dots with the SiO2 wetting layers between the dots. The step height and base width of the dots increase with the deposition time. A metal-oxide-semiconductor photodetector is fabricated using the liquid-phase-deposited oxide, and has a responsivity of 0.08 mA/W at 1550 nm.

  5. Evolution of the structural and magnetotransport properties of magnetite films depending on the temperature of their synthesis on the SiO2/Si(001) surface

    NASA Astrophysics Data System (ADS)

    Balashev, V. V.; Vikulov, V. A.; Dimitriev, A. A.; Pisarenko, T. A.; Pustovalov, E. V.; Korobtsov, V. V.

    2017-07-01

    The methods of transmission and reflection electron diffraction have been used to investigate the structure of Fe3O4 films depending on the temperature of their synthesis on an Si substrate coated with an ultrathin layer of SiO2. The thus-grown polycrystalline films of magnetite had a texture, the axis of which was perpendicular to the surface of the SiO2 film. It has been revealed that, with an increase in the growth temperature, a structural rearrangement occurs which is characterized by an increase in the volume fraction of grains with the preferred (311) orientation. A study of the magnetotransport properties of the films has shown that the magnitude of their magnetoresistance increases with an increase in the temperature of their synthesis. It has been established that in the Fe3O4/SiO2/Si system with a tunneling-thin layer of SiO2 the magnetoresistance decreases as a result of the flow of an electric current through the silicon substrate.

  6. Polymeric fibre optic sensor based on a SiO2 nanoparticle film for humidity sensing on wounds

    NASA Astrophysics Data System (ADS)

    Gomez, David; Morgan, Stephen P.; Hayes Gill, Barrie R.; Korposh, Serhiy

    2016-05-01

    Optical fibre sensors have the potential to be incorporated into wound dressings to monitor moisture and predict healing without the need to remove the dressing. A low cost polymeric optical fibre humidity sensor based on evanescent wave absorption is demonstrated for skin humidity measurement. The sensor is fabricated by coating the fibre with a hydrophilic film based on bilayers of Poly(allylamine hydrochloride) (PAH) and SiO2 mesoporous nanoparticles. The Layer-by-Layer method was used for the deposition of the layers. Multimode polymeric optical fibre with a cladding diameter of 250μm was covered by 7 layers of PAH/SiO2 film on the central region of an unclad fibre with a diameter of 190μm. The length of the sensitive region is 30mm. Experiment results show a decrease in light intensity when relative humidity increases due to refractive index changes of the fibre coating. The sensitivity obtained was 200mV/%RH and the sensor was demonstrated to provide a faster response to changes in the humidity of the skin microenvironment than a commercial sensor.

  7. Formation and escaping of positronium in porous SiO 2 films at low temperature

    NASA Astrophysics Data System (ADS)

    Mariazzi, S.; Toniutti, L.; Patel, N.; Brusa, R. S.

    2008-10-01

    Positronium formation and escaping has been studied in porous silica thin films at temperature ranging from 13 to 300 K by 2-3 gamma ratio of positronium (3γ-PAS) measurements. Nanoporous silica thin films were deposited by spin coating on p-type (1 0 0) Si substrates and thermal treated in air at temperatures of 600 °C. Two different molar ratios of porogen (polyvinylpyrrolidone) were used in the TEOS-ethanol mixture to obtain samples with close porosity and connected porosity with the surfaces. In both types of sample a reduction of the 2-3 gamma ratio of positronium was observed by decreasing the temperature. This finding, in disagreement with the theoretical expectation, is discussed on the basis of the possible quenching mechanisms.

  8. Effect of Cations on the Chemical Mechanical Polishing of SiO2 Film

    NASA Astrophysics Data System (ADS)

    Song, Han; Wang, Liang-Yong; Liu, Wei-Li; Song, Zhi-Tang

    2013-09-01

    We investigate the effect of cations with different valences on the chemical mechanical polishing (CMP) of silicon dioxide films. The removal rate and surface roughness of the silicon-dioxide-film post-CMP are checked for the silica-based slurry with different cation salts (NaCl, CaCl2, AlCl3). Meanwhile, the particle size and size distribution of the slurries are characterized to test their lifetimes. The result shows that the three kinds of salts can improve the polishing removal rate from around 20 nm/min to 120 nm/min without affecting the surface roughness when the polishing slurry is stable. With increasing valence of cations, the polishing slurry requires less cation concentration to be added to improve the removal rate, while keeping a superior surface topography and maintaining a longer lifetime as well.

  9. Synthesis of CeO2@SiO2 core-shell nanoparticles by water-in-oil microemulsion. Preparation of functional thin film.

    PubMed

    Grasset, F; Marchand, R; Marie, A-M; Fauchadour, D; Fajardie, F

    2006-07-15

    Synthesis of nanoparticles under restricted environment offered by water-in-oil (W/O) microemulsions provides excellent control over particle size and shape, and inter-particle spacing. Such an environment has been involved to synthesize silica nanoparticles with a CeO2 core, so-called CeO2@SiO2. Aqueous fluids made up of ceria nanoparticles with a size close to 5 nm have been used as the water phase component. The starting CeO2 sols and obtained CeO2@SiO2 nanoparticles have been characterized by dynamic light scattering (DLS), X-ray diffraction, scanning and transmission electron microscopy, and specific surface area measurements. The microemulsion process has been characterized by DLS. Preliminary results on CeO2@SiO2 thin films are presented.

  10. Molecular dynamics simulations of dotriacontane films supported on a SiO2 surface

    NASA Astrophysics Data System (ADS)

    Gutierrez, Sebastian; Araya, Raul; Perez-Acle, Tomas; Retamal, Maria Jose; Volkmann, Ulrich G.

    2011-03-01

    Dotriacontane (C32 H66 , C32) films supported on Si O2 surfaces were studied using very high-resolution ellipsometry, atomic force microscopy (AFM) and x-ray reflectivity techniques. For almost complete layers a model was proposed in which the C32/ Si O2 interfacial region is characterized by a parallel bilayer and perpendicular layers on top. Recent AFM measurements performed on samples forming sea-weed like structures, showed that for these particular perpendicular ``fractal like'' layers the heights are lower than the all-trans length of dotriacontane (42.5 AA). To gain insights on the internal molecular ordering and layering of C32 supported on Si O2 surfaces, we used all-atom molecular dynamics to simulate C32 films at different temperatures. Our results confirm the presence of the parallel bilayer suggesting the existence of a mixed layer on top, formed by molecules with both parallel and perpendicular segments. These findings suggest a different molecular architecture for sea-weed like structures of dotriacontane supported on Si O2 .

  11. Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed SiO2 thin films for ReRAM.

    PubMed

    Choi, Byung Joon; Chen, Albert B K; Yang, Xiang; Chen, I-Wei

    2011-09-01

    Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

  12. Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2 substrates.

    PubMed

    Hübner, R; Hecker, M; Mattern, N; Hoffmann, V; Wetzig, K; Engelmann, H-J; Zschech, E

    2004-06-01

    Structural changes at annealing temperatures (T(an)) of 500-1,100 degrees C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal beta-Ta, whereby the [001] texture is independent of the substrate material. At lower annealing temperatures, the microstructural evolution is essentially the same for both Ta films. Incorporation of O atoms causes an increase of the intrinsic compressive stress, and diffusion of C atoms into the Ta layer leads to the formation of Ta(2)C. Additionally, a partial transformation of the original beta-Ta phase into a second phase with tetragonal unit cell (denoted as beta'-Ta) occurs. For the Ta/Si system, the formation of a Ta-Si intermixing layer is initiated at T(an)=550 degrees C, and nucleation of crystalline TaSi(2) occurs at T(an)=620 degrees C. The formation of a second Ta silicide was not detected up to T(an)=900 degrees C. In the case of the Ta film deposited onto the SiO(2) substrate, the metastable beta-Ta and the beta'-Ta transform completely into the thermodynamically stable cubic alpha-Ta at T(an)=750 degrees C. A marked reaction with the substrate indicated by the formation of Ta(2)O(5) and Ta(5)Si(3) occurs at T(an)=1,000 degrees C.

  13. SYNCHROTRON RADIATION, FREE ELECTRON LASER, APPLICATION OF NUCLEAR TECHNOLOGY, ETC.: Identification of pore size in porous SiO2 thin film by positron annihilation

    NASA Astrophysics Data System (ADS)

    Zhang, Zhe; Qin, Xiu-Bo; Wang, Dan-Ni; Yu, Run-Sheng; Wang, Qiao-Zhan; Ma, Yan-Yun; Wang, Bao-Yi

    2009-02-01

    Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

  14. Afm Study of the Evolution of Double Layer on SiO2 Surface and Self-Assembly Monolayer Induced by the Polarization with DC Voltages

    NASA Astrophysics Data System (ADS)

    Tian, Tian; Zhang, Yong; Wang, Haitao; Huang, Ningping; Xiao, Zhongdang

    AFM was used to study the evolution of double layer on SiO2 surface and self-assembly monolayer induced by the polarization with DC voltages. Approach force curves were recorded when external DC voltages were applied between solution and SiO2 or aminopropyltriethoxysilane (APTES) modified SiO2 surfaces in electrolyte solution. The results showed that the reversing of tip-surface interaction forces between attraction and repulsion could take place only by adjusting DC voltages. It is very useful for biotechnology because the adsorption of biomolecules could be controllable by DC voltages. A model was proposed to explain the behavior of double layer under DC voltages.

  15. Film growth, adsorption and desorption kinetics of indigo on SiO2.

    PubMed

    Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

    2014-05-14

    Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.

  16. Film growth, adsorption and desorption kinetics of indigo on SiO2

    PubMed Central

    Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

    2015-01-01

    Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer des orption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption. PMID:24832297

  17. Adsorption and self-assembly of M13 phage into directionally organized structures on C and SiO2 films.

    PubMed

    Moghimian, Pouya; Srot, Vesna; Rothenstein, Dirk; Facey, Sandra J; Harnau, Ludger; Hauer, Bernhard; Bill, Joachim; van Aken, Peter A

    2014-09-30

    A versatile method for the directional assembly of M13 phage using amorphous carbon and SiO2 thin films was demonstrated. A high affinity of the M13 phage macromolecules for incorporation into aligned structures on an amorphous carbon surface was observed at the concentration range, in which the viral nanofibers tend to disorder. In contrast, the viral particles showed less freedom to adopt an aligned orientation on SiO2 films when deposited in close vicinity. Here an interpretation of the role of the carbon surface in significant enhancement of adsorption and generation of viral arrays with a high orientational order was proposed in terms of surface chemistry and competitive electrostatic interactions. This study suggests the use of amorphous carbon substrates as a template for directional organization of a closely-packed and two-dimensional M13 viral film, which can be a promising route to mineralize a variety of smooth and homogeneous inorganic nanostructure layers.

  18. Frictional characteristics of nano-scale mesoporous SiO2 thin film formed by sol-gel and self-assembly method.

    PubMed

    Lee, Gyu-Sun; Shin, Yun-Ha; Kim, Ji-Man; Kim, Tae-Sung; Lee, Young-Ze

    2009-12-01

    The pores on the surface function as an outlet for wear particles and enhance the storage of lubricants, which improves lubrication effectiveness. Mesoporous SiO2 thin films were formed by the sol-gel and self-assembly methods to have a porous structure. One of the important issues in the manufacturing of the films involves the control of the porous structure to ensure proper mechanical properties. Mesoporous materials were manufactured with two surfactants, Pluronid Polyol (F127) and Cetyltrimethylammonium Bromide (CTABr). The pores were then exposed on the surface by chemical mechanical polishing (CMP) and plasma-etching. Ball-on-disk tests with mesoporous SiO2 thin films on glass specimens were conducted. The results show that the friction coefficient and wear volume of a specimen with F127, which has a 8 nm pore size, are far lower than those of CTABr, which has a 3 nm pore size at both the dry condition and at boundary lubricated condition. This proves a significant dependency of friction and wear on pore size of mesoporous SiO2 thin films.

  19. Phonon induced luminescence decay in monolayer MoS2 on SiO2/Si substrates

    NASA Astrophysics Data System (ADS)

    Saigal, Nihit; Ghosh, Sandip

    2015-12-01

    Exfoliated monolayer MoS2 films on SiO2/Si substrates have been studied using photoluminescence (PL), Raman and reflectance contrast (RC) spectroscopies. With increase in temperature, the intensity of the two dominant PL spectral features A and D, attributed to A exciton/trion and to defects, seemingly decay in an activated fashion with an energy ˜ 50 meV , which is close to the energies of E2 g 1 and A1g phonons. Comparison of absorption spectrum derived from RC with circular polarization resolved PL spectrum suggests that both D and A emissions are associated with bound excitons, the A emission involving relatively weakly localized ones. The PL decay behaviour is explained using a phenomenological model where non-radiative loss of excitons is determined by the number of excited phonon modes. This corroborates the recent finding of strong A exciton and A1g phonon coupling in monolayer MoS2.

  20. Ion induced dewetting of Au-Si on a SiO2 surface: composite nanodot evolution and wettability transition.

    PubMed

    Datta, D P; Siva, V; Varma, S; Kanjilal, D; Sahoo, P K

    2016-11-21

    A nanodot array morphology gradually develops on SiO2 surface when a thin bi-layer of Au and Si undergoes ion irradiation. An increasing amount of gold silicide is detected as islands on the insulator surface evolve into nanodots as a function of increasing ion fluence. Different stages of evolution from islands to nanodots are found to be driven by the localized melting of Au along the ion-track and dewetting of the metal film. Dewetting is accompanied by sputter-erosion and mixing of Au and Si at the bi-layer interface due to ion energy deposition. Interestingly, a gradual transition in wettability of the surface from the hydrophilic to the hydrophobic one is observed with the growth of nanodots, which is correlated with the compositional variation. The experimental results indicate a route towards the controlled growth of composite nanodots on an insulator surface having hydrophobic properties using ion irradiation.

  1. New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity

    PubMed Central

    Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

    2017-01-01

    Abstract Highly transparent, energy-saving, and superhydrophobic nanostructured SiO2/VO2 composite films have been fabricated using a sol–gel method. These composite films are composed of an underlying infrared (IR)-regulating VO2 layer and a top protective layer that consists of SiO2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO2 layer. The transmittance of the composite films in visible region (T lum) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO2 films and tungsten-doped VO2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO2/VO2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW.cm−2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications. PMID:28970866

  2. Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing

    NASA Astrophysics Data System (ADS)

    Tyschenko, Ida E.; Volodin, Vladimir A.; Cherkov, Alexander G.

    2016-12-01

    The effect of pressure employed during subsequent annealing of the Ge+-ion implanted SiO2 layers on the Ge nanocrystal formation was studied. Ge+ ions implanted in the thin SiO2 layers formed Gauss-like profiles with a Ge peak concentration varied from 1 to 12 at%. Subsequent annealing was carried out at temperature 600-1130 °C under pressures 1-1.2×104 bar. Strong effect of the pressure on the Ge atom distribution was obtained. High-temperature annealing under pressure within the range of 1-103 bar resulted in the out-diffusion of germanium from the SiO2 layer to the Si substrate. As the pressure reached 1.2×104 bar, Ge migration to the Si/SiO2 interface was prevented. At that, the Ge nanocrystal growth within the ion-implanted region of the SiO2 film took place. The nanocrystal size was investigated as a function both of the Ge atom concentration and the annealing temperature. The obtained results show a diffusion-controlled nanocrystal growth mechanism. The high-pressure (1.2×104 bar) diffusion coefficient of germanium in silicon dioxide was estimated as a function of the temperature and expressed by D=1.1×10-10 exp(-1.43 eV/kT) cm2/s.

  3. SiO2-nanocomposite film coating of CAD/CAM composite resin blocks improves surface hardness and reduces susceptibility to bacterial adhesion.

    PubMed

    Kamonwanon, Pranithida; Hirose, Nanako; Yamaguchi, Satoshi; Sasaki, Jun-Ichi; Kitagawa, Haruaki; Kitagawa, Ranna; Thaweboon, Sroisiri; Srikhirin, Toemsak; Imazato, Satoshi

    2017-01-31

    Composite resin blocks for computer-aided design/computer-aided manufacturing (CAD/CAM) applications have recently become available. However, CAD/CAM composite resins have lower wear resistance and accumulate more plaque than CAD/CAM ceramic materials. We assessed the effects of SiO2-nanocomposite film coating of four types of CAD/CAM composite resin blocks: Cerasmart, Katana Avencia block, Lava Ultimate, and Block HC on surface hardness and bacterial attachment. All composite blocks with coating demonstrated significantly greater Vickers hardness, reduced surface roughness, and greater hydrophobicity than those without coating. Adhesion of Streptococcus mutans to the coated specimens was significantly less than those for the uncoated specimens. These reduced levels of bacterial adherence on the coated surface were still evident after treatment with saliva. Surface modification by SiO2-nanocomposite film coating has potential to improve wear resistance and susceptibility to plaque accumulation of CAD/CAM composite resin restorations.

  4. Annealing induced degradation of thermal SiO2 on (100)Si: Point defect generation

    NASA Astrophysics Data System (ADS)

    Stesmans, A.; Pierreux, D.; Afanas'ev, V. V.

    2003-01-01

    The structural degradation of thermal SiO2 on (100)Si under isochronal post oxidation vacuum annealing (POVA) has been probed by electron spin resonance (ESR). The degradation process, studied in the range T-an = 950-1250degreesC, is established as intense point defect generation including E'(gamma) E'(delta), EX and the elusive predominant degradation center S. Thermally activated generation is revealed over broad T-an ranges for the two most populous defects, S and E'(gamma), with a common activation energy similar to1.6 eV. Depth profiling after heating at 1200degreesC shows that the S centers predominantly reside near the oxide borders, generally in anticorrelation with the E. distribution. The S center susceptibility has been inferred from conventional ESR signal intensity monitoring as well as from revealed anisotropic demagnetisation effects. It is found Curie-Weiss type with critical temperature of similar to1.3 K. Newly observed weak hyperfine structure may comply with the S center being an E'-Iike defect.

  5. Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Hu; Qi, Hongji; Zhao, Jiaoling; Wang, Bin; Shao, Jianda

    2017-03-01

    Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology.

  6. Evidence for strain-induced local conductance modulations in single-layer graphene on SiO2.

    PubMed

    Teague, M L; Lai, A P; Velasco, J; Hughes, C R; Beyer, A D; Bockrath, M W; Lau, C N; Yeh, N-C

    2009-07-01

    Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO(2) substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene.

  7. The enhanced photocatalytic activity and self-cleaning properties of mesoporous SiO2 coated Cu-Bi2O3 thin films.

    PubMed

    Shan, Wenjie; Hu, Yun; Zheng, Mengmeng; Wei, Chaohai

    2015-04-28

    Mesoporous SiO2 coated Cu-Bi2O3 thin films (meso-SiO2/Cu-Bi2O3) were prepared on glass substrates using a simple sol-gel/spin-coating method. The structure and optical properties were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, a UV-vis spectrophotometer and a water contact angle meter. The photocatalytic activity and self-cleaning properties of the films were investigated through the degradation of methyl orange and stearic acid, respectively. It was found that the meso-SiO2/Cu-Bi2O3 thin films were highly transparent and showed excellent superhydrophilicity even in the dark. The thin films exhibited enhanced photocatalytic activity and self-cleaning properties compared to pure Bi2O3 films, which was attributed to the cooperation of the interfacial charge transfer between Bi2O3 and surface Cu species as well as the unique mesoporous SiO2 structure. The results showed that the films can be used as promising self-cleaning and antifogging materials.

  8. High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Wado, Hiroyuki; Sawa, Akihito

    2015-08-01

    The introduction of a TiO2 buffer layer significantly improved the temperature coefficient of resistance (TCR), a measure of the sharpness of the metal-insulator transition, for films of VO2 grown on SiO2/Si (100) substrates at growth temperatures below 670 K. X-ray diffraction and Raman scattering measurements revealed that polycrystalline VO2 films were formed on the TiO2-buffered substrates at low temperatures below 600 K, whereas amorphous films were formed at these temperatures on SiO2/Si (100) substrates without a TiO2 buffer layer. Electron microscopy studies confirmed that the TiO2 buffer layer enhanced the grain growth of VO2 films at low growth temperatures. The VO2 films grown at 600 K on TiO2-buffered substrates showed a large TCR of more than 80%/K as a result of the improved crystallinity and grain size of the VO2 films. Our results provide an effective approach toward the integration of VO2-based devices onto Si platforms at process temperatures below 670 K.

  9. Photoluminescent Au-Ge composite nanodots formation on SiO2 surface by ion induced dewetting

    NASA Astrophysics Data System (ADS)

    Datta, D. P.; Siva, V.; Singh, A.; Kanjilal, D.; Sahoo, P. K.

    2017-09-01

    Medium energy ion irradiation on a bilayer of Au and Ge on SiO2 is observed to result in gradual morphological evolution from an interconnected network to a nanodot array on the insulator surface. Structural and compositional analyses reveal composite nature of the nanodots, comprising of both Au and Ge. The growing nanostructures are found to be photoluminescent at room temperature where the emission intensity and wavelengths vary with morphology. The growth of such nanostructures can be understood in terms of dewetting of the metal layer under ion irradiation due to ion-induced melting along the ion tracks. The visible PL emission is found to be related with evolution of the Au-Ge nanodots. The study indicates a route towards single step synthesis of metal-semiconductor nanodots on insulator surface.

  10. The structural studies of Ag containing TiO2-SiO2 gels and thin films deposited on steel

    NASA Astrophysics Data System (ADS)

    Adamczyk, Anna; Rokita, Magdalena

    2016-06-01

    FTIR spectroscopic structural studies of titania-silica monolith samples as well as thin films deposited on steel were described in this work. Thin films were synthesized by the sol-gel method applying the dip coating as separate one-component TiO2 and/or SiO2 layers or as two-component TiO2-SiO2 thin films. Silver nanoparticles were incorporated into the structure from pure SiO2 sol, deposited then as an additional layer in those hybrid multilayers systems. Except the spectroscopic studies, XRD diffraction, SEM microscopy with EDX analysis and AFM microscopy were applied. The structural studies allow to describe and compare the structure and the morphology of thin films, as well those Ag free as Ag containing ones, also by the comparison with the structure of bulk samples. In FTIR spectra, the band observed at about 613 cm-1 can be connected with the presence of the non-tetrahedral cation in the structure and is observed only in the spectra of Ag containing bulk samples and thin films. The bands at 435-467 cm-1 are due to the stretching vibrations of Ti-O bonds or as well to the bending vibrations of O-Si-O one. In the ranges of 779-799 cm-1 and 1027-1098 cm-1, the bands ascribed to the symmetric stretching vibrations and asymmetric vibrations of Si-O-Si connections, respectively, are observed. SEM and AFM images gave the information on the microstructure and the topography of samples surface. XRD measurements confirmed the presence of only amorphous phase in samples up to 500 °C and allowed to observe the tendency of their crystallization.

  11. SiO2/TiO2/n-Si/Ag(Cr)/TiO2 thin films with superhydrophilicity and low-emissivity

    NASA Astrophysics Data System (ADS)

    Loka, Chadrasekhar; Ryeol Park, Kyoung; Lee, Kee-Sun

    2016-01-01

    In this study, SiO2/TiO2/n-Si/Ag(Cr)/TiO2 multilayer structures have been designed and deposited by the RF and DC magnetron sputtering at room temperature. The as-deposited TiO2/glass films which are initially amorphous in nature were subjected to post annealing at 673 K for anatase phase TiO2. The anatase TiO2 films showed an optical bandgap ˜3.32 eV. The Ag(Cr)/TiO2 showed very low-emissivity (low-e) value ˜0.081 which is evaluated by using the sheet resistance (6.51 Ω/□) of the films. All the deposited films showed high visible transmittance (˜81%) and high infrared reflectance (72%) which are recorded by using the UV-vis-NIR spectrophotometer. In addition, experimentally obtained optical properties were in good agreement with the simulation data. The TiO2/n-Si heterojunction concept has been employed to enhance the superhydrophilicity of the deposited multilayer stack, TiO2/n-Si/Ag(Cr)/TiO2 films exhibited best superhydrophilicity with water contact angle ˜2°. The deposited multilayer structures SiO2/TiO2/n-Si/Ag(Cr)/TiO2 and TiO2/n-Si/Ag(Cr)/TiO2 achieved significant low-e and superhydrophilicity.

  12. Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells.

    PubMed

    Theuring, Martin; Wang, Peng Hui; Vehse, Martin; Steenhoff, Volker; von Maydell, Karsten; Agert, Carsten; Brolo, Alexandre G

    2014-10-02

    Plasmonic and photonic light trapping structures can significantly improve the efficiency of solar cells. This work presents an experimental and computational comparison of identically shaped metallic (Ag) and nonmetallic (SiO2) nanoparticles integrated to the back contact of amorphous silicon solar cells. Our results show comparable performance for both samples, suggesting that minor influence arises from the nanoparticle material. Particularly, no additional beneficial effect of the plasmonic features due to metallic nanoparticles could be observed.

  13. Ag-TiO2 nanoparticle codoped SiO2 films on ZrO2 barrier-coated glass substrates with antibacterial activity in ambient condition.

    PubMed

    Mukhopadhyay, Anindita; Basak, Sujit; Das, Jugal Kishore; Medda, Samar Kumar; Chattopadhyay, Krishnananda; De, Goutam

    2010-09-01

    Anatase TiO2 and Ag nanoparticles (NPs) codoped SiO2 films were prepared by the sol-gel method. Proportionate amounts of 3-(glycidoxypropyl)trimethoxysilane (GLYMO), tetraethylorthosilicate (TEOS) and 3-(methacryloxypropyl)trimethoxysilane (MEMO) derived inorganic-organic silica sol, commercially available dispersed anatase TiO2 NPs, and AgNO3 were used to prepare the sols. The films were prepared on ZrO2 (cubic) precoated soda-lime glass substrates by a single-dipping technique and heat-treated at 450 °C in air and H2/Ar atmosphere to obtain hard, relatively porous, and transparent coatings of thickness>600 nm. The ZrO2 barrier layer was previously applied on soda-lime glass to restrict the diffusion of Ag into the substrate. The Ag-TiO2 NPs incorporated SiO2 films were intense yellow in color and found to be fairly stable at ambient condition for several days under fluorescent light. These films show a considerable growth inhibition on contact with the gram negative bacteria E. coli.

  14. Aggregation of dipolar molecules in SiO2 hybrid organic-inorganic films: use of silver nanoparticles as inhibitors of molecular aggregation

    NASA Astrophysics Data System (ADS)

    Franco, Alfredo; García-Macedo, Jorge; Brusatin, Giovanna; Guglielmi, Massimo

    2013-04-01

    The technological implementation of hybrid organic-inorganic materials in second order nonlinear optical photonic devices depends strongly on the ability of the host matrixes to contain high loads of dipolar molecules without aggregation. Some organic molecules are often used to diminish the attracting interactions between dipolar molecules in such kind of materials, but their efficiency as inhibitors of molecular aggregation is limited by their polarizability. In this work, we report the use of silver nanoparticles as inhibitors of molecular aggregation in hybrid organic-inorganic films doped with dipolar molecules. The large polarizability of the silver nanoparticles makes them ideal moieties for the inhibition of the electrostatic interactions between dipolar nonlinear optical molecules. The average size of the silver nanoparticles in this work was 70.5 nm in diameter, they were synthesized using silver nitrate (AgNO3) as precursor and aminoethylaminopropyltrimethoxysilane as reducing agent. These nanoparticles were immersed in SiO2 hybrid organic-inorganic sol-gel films doped with dipolar chromophores to study their effect as inhibitors of dipolar chromophores aggregation. The presence of the silver nanoparticles in the solid films was confirmed by transmission electronic microscopy and UV-Visible spectroscopy. UV-Visible spectroscopy was also used to monitor the dipolar chromophores aggregation in the SiO2 films. We found that, at room temperature, silver nanoparticles are good inhibiting chromophores aggregation in comparison with the performance of organic inhibitors.

  15. Microstructure and optical dispersion characterization of nanocomposite sol-gel TiO2-SiO2 thin films with different compositions

    NASA Astrophysics Data System (ADS)

    Kermadi, S.; Agoudjil, N.; Sali, S.; Zougar, L.; Boumaour, M.; Broch, L.; En Naciri, A.; Placido, F.

    2015-06-01

    Nanocomposite TiO2-SiO2 thin films with different compositions (from 0 to 100 mol% TiO2) were deposited by sol-gel dip-coating method on silicon substrate. Crystal structure, chemical bonding configuration, composition and morphology evolutions with composition were followed by Raman scattering, Fourier transform infrared spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy respectively. The refractive index and the extinction coefficient were derived in a broad band wavelength (250-900 nm) from spectroscopic ellipsometry data with high accuracy and correlated with composition and microstructure. Results showed an anatase structure for 100% TiO2 with a grain size in 6-10 nm range. Whereas, the inclusion of SiO2 enlarges the optical band gap and suppresses the grain growth up to 4 nm in size. High TiO2 dispersion in SiO2 matrix was observed for all mixed materials. The refractive index (at λ = 600 nm) increases linearly with composition from 1.48 (in 100% SiO2) to 2.22 (in 100% TiO2) leading to lower dense material, its dispersion being discussed in terms of the Wemple-DiDomenico single oscillator model. Hence, the optical parameters, such optical dispersion energies E0 and Ed, the average oscillators, strength S0 and wavelength λ0 and the ratio of the carrier concentration to the effective mass N/m∗ have been derived. The analysis revealed a strong dependence on composition and structure. The optical response was also investigated in term of complex optical conductivity (σ) and both volume and surface energy loss functions (VELF and SELF).

  16. Emission enhancement of femtosecond laser-induced breakdown spectroscopy by combining nanoparticle and dual-pulse on crystal SiO2

    NASA Astrophysics Data System (ADS)

    Yang, Fan; Jiang, Lan; Wang, Sumei; Cao, Zhitao; Liu, Lei; Wang, Mengmeng; Lu, Yongfeng

    2017-08-01

    Metal nanoparticle deposition on sample surface is a promising approach to enhance the emission signal during laser-induced breakdown spectroscopy (LIBS). In this article, strong optical emission enhancement was achieved by combining nanoparticle enhanced LIBS (NELIBS) and double pulse LIBS (DP-LIBS) on a crystal SiO2 sample by using femtosecond laser. Thermal dewetting was used to deposit gold (Au) nanoparticles (NPs) on sample surface and NPs with different size were obtained by altering the thickness of the Au film. It was found that both the size and distribution of Au NPs significantly affected the enhancement effect of NELIBS and the Au NPs made from 7.5 nm gold film had the best enhancement effect. The fundamental features of NELIBS enhancement for dielectric target were investigated by studying the photon absorption process. At a low laser fluence of 4.4 J/cm2, an enhancement factor of about 13 for spectrum intensity was obtained in NELIBS and reached to 30 after being combined with DP-LIBS.

  17. Effect of SiO2 addition on photocatalytic activity, water contact angle and mechanical stability of visible light activated TiO2 thin films applied on stainless steel by a sol gel method

    NASA Astrophysics Data System (ADS)

    Momeni, Mansour; Saghafian, Hasan; Golestani-Fard, Farhad; Barati, Nastaran; Khanahmadi, Amirhossein

    2017-01-01

    Nanostructured N doped TiO2/20%SiO2 thin films were developed on steel surface via sol gel method using a painting airbrush. Thin films then were calcined at various temperatures in a range of 400-600 °C. The effect of SiO2 addition on phase composition and microstructural evolution of N doped TiO2 films were studied using XRD and FESEM. Optical properties, visible light photocatalytic activity, hydrophilic behavior, and mechanical behavior of the films were also investigated by DRS, methylene blue degradation, water contact angle measurements, and nanoscratch testing. Results indicated that the band gap energy of N doped TiO2/SiO2 was increased from 2.93 to 3.09 eV. Crack formation during calcination was also significantly promoted in the composite films. All composite films demonstrated weaker visible light photocatalytic activities and lower mechanical stability in comparison with N doped TiO2 films. Moreover, the N doped TiO2/SiO2 film calcined at 600 °C showed undesirable hydrophilic behavior with a water contact angle of 57° after 31 h of visible light irradiation. Outcomes of the present study reveal some different results to previous reports on TiO2/SiO2 films. In general, we believe the differences in substrate material as well as application in visible light are the main reasons for the above mentioned contradiction.

  18. Spin-wave modes in granular superferromagnetic (SiO2)Co/GaAs films observed using Brillouin light scattering

    NASA Astrophysics Data System (ADS)

    Stashkevich, A. A.; Roussigné, Y.; Stognij, A. I.; Novitskii, N. N.; Kostylev, M. P.; Wurtz, G. A.; Zayats, A. V.; Lutsev, L.

    2008-12-01

    Behavior of dipole-exchange spin waves (SWs) in the Damon-Eshbach geometry in a nanocomposite (SiO2)100-xCox superferromagnetic (x=80at.%) film has been studied by Brillouin light scattering. The measured value of the effective exchange constant turned out to be three times less than its value for the bulk cobalt. A qualitative theoretical model has been proposed to explain this reduction. It has been shown that the “superspin” approximation, identifying each nanoparticle with a “magnetic point” with no internal structure, is not sufficient to account for the description of the SW behavior of a concentrated nanocomposite medium.

  19. Brillouin light scattering observation of the transition from the superparamagnetic to the superferromagnetic state in nanogranular (SiO2)Co films

    NASA Astrophysics Data System (ADS)

    Stashkevich, A. A.; Roussigné, Y.; Djemia, P.; Billet, D.; Stognij, A. I.; Novitskii, N. N.; Wurtz, G. A.; Zayats, A. V.; Viau, G.; Chaboussant, G.; Ott, F.; Gautrot, S.; Kostylev, M. P.; Lutsev, L. V.; Belotelov, V.

    2008-11-01

    Evolution of magnetic excitations from purely magnetostatic modes to dipole-exchange spin waves in the Damon-Eshbach geometry in nanocomposite (SiO2)100-xCox (50 at. %films during a transition from superparamagnetic to superferromagnetic state has been studied by Brillouin light scattering. It has been shown that removal of the degeneracy of backward volume magnetostatic waves due to nonzero exchange constant manifests itself in more pronounced Stokes/anti-Stokes asymmetry. Accompanying static characterization by means of magnetic force microscopy imaging and grazing incidence small angle neutron scattering has demonstrated the presence of weak stripe domains in the superferromagnetic phase.

  20. Rhodamine 6G and 800 J-heteroaggregates with enhanced acceptor luminescence (HEAL) adsorbed in transparent SiO2 GLAD thin films.

    PubMed

    Sánchez-Valencia, Juan R; Aparicio, Francisco J; Espinós, Juan P; Gonzalez-Elipe, Agustín R; Barranco, Angel

    2011-04-21

    An enhanced fluorescent emission in the near infrared is observed when the Rhodamine 800 (Rh800) and 6G (Rh6G) dyes are coadsorbed in porous SiO(2) optical thin films prepared by glancing angle deposition (GLAD). This unusual behavior is not observed in solution and it has been ascribed to the formation of a new type of J-heteroaggregates with enhanced acceptor luminescence (HEAL). This article describes in detail and explains the main features of this new phenomenology previously referred in a short communication [J. R. Sánchez-Valencia, J. Toudert, L. González-García, A. R. González-Elipe and A. Barranco, Chem. Commun., 2010, 46, 4372-4374]. It is found that the efficiency and characteristics of the energy transfer process are dependent on the Rh6G/Rh800 concentration ratio which can be easily controlled by varying the pH of the solutions used for the infiltration of the molecules or by thermal treatments. A simple model has been proposed to account for the observed enhanced acceptor luminescence in which the heteroaggregates order themselves according to a "head to tail" configuration due to the geometrical constrains imposed by the SiO(2) porous matrix thin film. The thermal stability of the dye molecules within the films and basic optical (absorption and fluorescence) principles of the HEAL process are also described.

  1. Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

    NASA Astrophysics Data System (ADS)

    Nagata, Kohki; Ogura, Atsushi; Hirosawa, Ichiro; Suwa, Tomoyuki; Teramoto, Akinobu; Ohmi, Tadahiro

    2016-04-01

    The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO2 thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties.

  2. Room-temperature NH3 gas sensors based on Ag-doped γ-Fe2O3/SiO2 composite films with sub-ppm detection ability.

    PubMed

    Tang, Yongliang; Li, Zhijie; Zu, Xiaotao; Ma, Jinyi; Wang, Lu; Yang, Jing; Du, Bo; Yu, Qingkai

    2015-11-15

    In this report, NH3 gas sensors based on Ag-doped γ-Fe2O3/SiO2 composite films are investigated. The composite films were prepared with a sol-gel process, and the films' electrical resistance responded to the change of NH3 concentration in the environment. The SEM and AFM investigations showed that the films had a porous structure, and the XRD investigation indicated that the size of Ag particles changed with the modification of Ag loading content. Through a comparative gas sensing study among the Ag-doped composite films, undoped composite film, γ-Fe2O3 film, and SiO2 film, the Ag-doped composite films were found to be much more sensitive than the sensors based on the undoped composite film and γ-Fe2O3 film at room temperature, indicating the significant influences of the SiO2 and Ag on the sensing property. Moreover, the sensor based on Ag-doped (4%) γ-Fe2O3/SiO2 composite film was able to detect the NH3 gas at ppb level. Conversely, the responses of the sensor to other test gases (C2H5OH, CO, H2, CH4 and H2S) were all markedly low, suggesting excellent selectivity.

  3. Restructuring-induced activity of SiO(2)-supported large au nanoparticles in low-temperature CO oxidation.

    PubMed

    Qian, Kun; Sun, Huaxing; Huang, Weixin; Fang, Jun; Lv, Shanshan; He, Bo; Jiang, Zhiquan; Wei, Shiqiang

    2008-01-01

    Large Au nanoparticles with an average size of approximately 10 nm supported on inert SiO(2) become active in low-temperature CO oxidation after the addition of NaNO(3). The catalyst structures have been characterized in detail by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray absorption spectroscopy. The NaNO(3) additive in Au/SiO(2) catalysts does not lead to the formation of fine Au nanoparticles, which are generally considered to be inevitable in low-temperature CO oxidation catalyzed by gold, nor does it alter the electronic structure of Au. The NaNO(3)-induced restructuring of large Au nanoparticles was proposed to create low-coordinated Au sites on the surface capable of catalyzing low-temperature CO oxidation. These results experimentally prove that the activity of supported Au nanoparticles in low-temperature CO oxidation could solely arise from their geometric structure, which greatly deepens the fundamental understandings of Au nanocatalysis.

  4. High-conductivity SiO2-matrix B-doped Si-NC thin films by following ion-beam treatment

    NASA Astrophysics Data System (ADS)

    Huang, Junjun; Wang, Weiyan; Yang, Jie; Tan, Yongzhen; Chen, Wei; Ge, Tianyu; Zhang, Yajun; Gao, Min; Chen, Zhenming

    2016-09-01

    In this work, further ion-beam was performed on SiO2-matrix B-doped Si-NC (SBC) thin films in order to enhance conductivity. The effect of ionbeam type on the electrical properties of SBC thin films was investigated systematically. The results indicated that the conductivities of SBC thin films were significantly improved by both argon and hydrogen ion-beam treatments, and the higher the hydrogen ion ratio, the higher the conductivity of SBC thin films. The conductivity of SBC thin films was increased from 1.82 × 10-6 S/cm to 3.2 × 10-3 S/cm with following hydrogen-ion-beam treatment. The change in conductivity of SBC thin films was most possibly resultant from the ion-beam treatment facilitating the formation of higher superficial order and lower defects. An alternative method was proposed to prepare high-conductivity SBC thin films, which may be applied to other heterogeneous thin films.

  5. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

    PubMed

    Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

    2016-01-27

    We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

  6. Water adsorption, solvation and deliquescence of alkali halide thin films on SiO2 studied by ambient pressure X-ray photoelectron spectroscopy

    SciTech Connect

    Arima, Kenta; Jiang, Peng; Deng, Xingyi; Bluhm, Henrik; Salmeron, Miquel

    2010-03-31

    The adsorption of water on KBr thin films evaporated onto SiO2 was investigated as a function of relative humidity (RH) by ambient pressure X-ray photoelectron spectroscopy. At 30percent RH adsorbed water reaches a coverage of approximately one monolayer. As the humidity continues to increase, the coverage of water remains constant or increases very slowly until 60percent RH, followed by a rapid increase up to 100percent RH. At low RH a significant number of the Br atoms are lost due to irradiation damage. With increasing humidity solvation increases ion mobility and gives rise to a partial recovery of the Br/K ratio. Above 60percent RH the increase of the Br/K ratio accelerates. Above the deliquescence point (85percent RH), the thickness of the water layer continues to increase and reaches more than three layers near saturation. The enhancement of the Br/K ratio at this stage is roughly a factor 2.3 on a 0.5 nm KBr film, indicating a strong preferential segregation of Br ions to the surface of the thin saline solution on SiO2.

  7. Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

    NASA Astrophysics Data System (ADS)

    Singh, Jitendra; Ranwa, Sapana; Akhtar, Jamil; Kumar, Mahesh

    2015-06-01

    ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2"-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ˜3.275 eV to ˜3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

  8. Device-quality SiO 2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

    NASA Astrophysics Data System (ADS)

    Lakhani, Amir A.

    1984-10-01

    A cold wall atmospheric pressure Chemical Vapor Deposition (CVD) reactor was used to deposit films of SiO 2 at 250°C on n-InP and p-Si substrates. By varying the ratio of oxygen to silane flow rates, the reactor was operated in both the reaction rate controlled and retardation regimes. The insulator-semiconductor interface was evaluated with the aid of high frequency and quasi-static C- V curves. Films deposited on Si in the retardation regime with O 2:SiH 4 = 6 had lowest Qss of 5.8 × 10 11 cm -2 and minimum fast surface state density of 1 × 10 11cm-2eV-1. C- V curves on InP had a hysteresis of 0.5 V, a well defined dip in the quasi-static curve and the accumulation capacitance exhibited no frequency dispersion.

  9. White light-emitting diode coated with ZnSe:Mn/ZnSe nanocrystal films enveloped by SiO2.

    PubMed

    Yang, Boping; Zhang, Jiayu; Cui, Yiping; Wang, Kai

    2011-11-01

    Mn-doped nanocrystals (NCs) have attracted much attention for their excellent properties. In our work, colloidal Mn-doped NCs with high quantum yield are synthesized and enveloped with silica hydrosol. The blend of NCs and silica hydrosol is coated on a blue light-emitting diode (LED), and the appropriate thickness of the NC film is found. White light is gained through the mix of the blue emission of the LED and the orange emission from Mn-doped NC films. The chromaticity coordinates and the image of the white LED indicate that Mn-doped NCs can be a good substitute for YAG:Ce phosphor, and the reliability of the white LED can be improved by enveloping NCs with SiO(2). © 2011 Optical Society of America

  10. Corn-like, recoverable γ-Fe2O3@SiO2@TiO2 photocatalyst induced by magnetic dipole interactions.

    PubMed

    Wang, Fang; Li, Manhong; Yu, Lifang; Sun, Fan; Wang, Zhuliang; Zhang, Lifang; Zeng, Hao; Xu, Xiaohong

    2017-07-31

    Corn-like, γ-Fe2O3@SiO2@TiO2 core/shell heterostructures were synthesized by a modified solvothermal reduction combined with a sol-gel method. SiO2 shells were first deposited on monodisperse Fe3O4 microspheres by a sol-gel method. Fe3O4@SiO2@TiO2 corn-like heterostructures were then obtained by sequential TiO2 coating, during which the magnetic dipolar interactions induced the anisotropic self-assembly process. After annealing at 350 °C, the crystalized TiO2 enhanced photocatalytic activity, while Fe3O4 was converted to γ-Fe2O3. The corn-like γ-Fe2O3@SiO2@TiO2 photocatalyst can be recycled and reused by magnet extraction. Despite the photocatalytic activity decreased with each cycle, it can be completely recovered by moderate heating at 200 °C.

  11. Light induced water oxidation on cobalt-phosphate (Co-Pi) catalyst modified semi-transparent, porous SiO2-BiVO4 electrodes.

    PubMed

    Pilli, Satyananda Kishore; Deutsch, Todd G; Furtak, Thomas E; Turner, John A; Brown, Logan D; Herring, Andrew M

    2012-05-21

    A facile and simple procedure for the synthesis of semi-transparent and porous SiO2-BiVO4 electrodes is reported. The method involves a surfactant assisted metal-organic decomposition at 500 °C. An earth abundant oxygen evolution catalyst (OEC), cobalt phosphate (Co-Pi), has been used to modify the SiO2-BiVO4 electrode by electrodeposition (ED) and photoassisted electrodeposition (PED) methods. Modified electrodes by these two methods have been examined for light induced water oxidation and compared to the unmodified SiO2-BiVO4 electrodes by various photoelectrochemical techniques. The PED method was a more effective method of OEC preparation than the ED method as evidenced by an increased photocurrent magnitude during photocurrent-potential (I-V) characterizations. Electrode surfaces catalyzed by PED exhibited a very large cathodic shift (∼420 mV) in the onset potential for water oxidation. The chopped-light I-V measurements performed at different intervals over 24-hour extended testing under illumination and applied bias conditions show a fair photostability for PED Co-Pi modified SiO2-BiVO4.

  12. X-ray diffraction and surface acoustic wave analysis of BST/Pt/TiO2/SiO2/Si thin films

    NASA Astrophysics Data System (ADS)

    Mseddi, Souhir; Njeh, Anouar; Schneider, Dieter; Fuess, Hartmut; Hédi Ben Ghozlen, Mohamed

    2011-11-01

    High dielectric constant and electrostriction property of (Ba, Sr)Ti03 (BST) thin films result in an increasing interest for dielectric devices and microwave acoustic resonator. Barium strontium titanate (Ba0.645Sr0.355TiO3) films of about 300 nm thickness are grown on Pt(111)/TiO2/SiO2/Si(001) substrates by rf magnetron sputtering deposition techniques. X-ray diffraction is applied for the microstructural characterization. The BST films exhibit a cubic perovskite structure with a dense and smooth surface. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in the BST films. Young's modulus E and the Poisson ratio ν of TiO2, Pt and BST films in different propagation directions are derived from the measured dispersion curves. Estimation of BST elastics constants are served in SAW studies. Impact of stratification process on SAW, propagating along [100] and [110] directions of silicon substrate, has been interpreted on the basis of ordinary differential equation (ODE) and stiffness matrix method (SMM). A good agreement is observed between experimental and calculated dispersion curves. The performed calculations are strongly related to the implemented crystallographic data of each layer. Dispersion curves are found to be sensitive to the SAW propagation direction and the stratification process for the explored frequency ranges 50-250 MHz, even though it corresponds to a wave length clearly higher than the whole films thickness.

  13. Detection of λ-cyhalothrin by a core-shell spherical SiO2-based surface thin fluorescent molecularly imprinted polymer film.

    PubMed

    Gao, Lin; Han, Wenjuan; Li, Xiuying; Wang, Jixiang; Yan, Yongsheng; Li, Chunxiang; Dai, Jiangdong

    2015-12-01

    A fluorescent core-shell molecularly imprinted polymer based on the surface of SiO2 beads was synthesized and its application in the fluorescence detection of ultra-trace λ-cyhalothrin (LC) was investigated. The shell was prepared by copolymerization of acrylamide with allyl fluorescein in the presence of LC to form recognition sites. The experimental results showed that the thin fluorescent molecularly imprinted polymer (FMIP) film exhibited better selective recognition ability than fluorescent molecularly non-imprinted polymer (FNIP). A new nonlinear relationship between quenching rate and concentration was found in this work. In addition, the nonlinear relationship allowed a lower concentration range of 0-5.0 nM to be described by the Stern-Volmer equation with a correlation coefficient of 0.9929. The experiment results revealed that the SiO2@FMIP was satisfactory as a recognition element for determination of LC in soda water samples. Therefore this study demonstrated the potential of MIP for the recognition and detection of LC in food.

  14. Substituent effects on packing entropy and film morphologies in the nucleation of functionalized pentacenes on SiO2 substrate: molecular dynamics simulations.

    PubMed

    Chen, Shuang; Ma, Jing

    2012-08-21

    The changes in structural ordering, packing entropy, free energy, and film morphologies in the initial nucleation processes of pentacene (Pn), 6, 13-bis(t-butylethynyl) pentacene (t-Bu Pn), and 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS Pn) on the SiO(2) substrate were investigated, by using the molecular dynamics simulations. During the nucleation, the rod-like Pn molecules tend to diffuse rapidly and have different orientations on the SiO(2) surface. At the low coverage, the t-Bu Pn and TIPS Pn molecules with the branched topological structures almost lie flat on the substrate. On the basis of statistical distribution of various packing configurations of the functionalized Pn pairs, the packing entropy is estimated according to the Boltzmann formula. The packing entropy abruptly decreases in the early stage of deposition. Once the critical nucleus size is reached, the packing entropy converges to a constant value. As the coverage increases, the monolayer films of Pn and its branched derivatives become more ordered. The TIPS Pn with the relatively larger molecular area would occasionally stand on the surface during the nucleation, resulting in the dramatic changes in free energy. In the monolayers, the functionalized Pn molecules are packing more orderly than those in amorphous solids, but less orderly than those in crystals. The degree of order of these monolayers increases as the size of the substituents increases. The understanding of substituent effects on nucleation processes and packing structures is helpful to fabricate organic thin films with well-predefined molecular orientations.

  15. SiO2 substrate and Mo,In codoping effect on crystalline and vibrational characteristics of ZnO sprayed thin films

    NASA Astrophysics Data System (ADS)

    Souissi, A.; Mimouni, R.; Amlouk, M.; Guermazi, S.

    2015-09-01

    Undoped ZnO and codoped ZnO:Mo:In thin films were deposited on an amorphous SiO2 substrate at 460 °C using a (Mo/Zn) molar ratio of 1% and (In/Zn) ratios of 1%, 2%, 3% and 10%. The thin films were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and Raman spectroscopy (RS). The results revealed that the average crystallite sizes ranged from 36.2 to 18.97 nm, decreasing uniformly with the increase of co-doping. They were also lower than the grain size values of 48.29, 51.38, 60.59, 36.76, and 54.52 nm and dependent on the evolution of the residual compressive stress values, namely 0.358, 0.314, 0.569, 0.278 and 0.108 GPa, without and with the co-doping, respectively. The non-uniformities recorded at In 2% could presumably be attributed to the variable effect of the SiO2 substrate and dopants on the formation of ZnO:Mo:In thin films. Raman spectroscopy confirmed the findings from structural analysis, showing that all samples crystallized following the hexagonal Wurtzite single phase. It highlighted the presence of two dominant bands, 1LO and 2LO, whose ∼71 and 137 meV energies were comparable and above the ZnO exciton binding energy of 60 meV. The 2LO band showed marked dependencies on the physicochemical parameters mentioned above. The strong bands noted for optimal co-doping at Mo 1% and In 3% can be used (tested) in various electrical and optoelectronic applications.

  16. Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

    PubMed Central

    Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

    2014-01-01

    Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration. PMID:25384345

  17. Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

    2014-11-01

    Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration.

  18. Temperature-dependent DIET of alkalis from SiO2 films: Comparison with a lunar sample

    NASA Astrophysics Data System (ADS)

    Yakshinskiy, Boris V.; Madey, Theodore E.

    2005-11-01

    We present recent results in an investigation of source mechanisms for the origin of alkali atoms (Na, K) in tenuous planetary atmospheres. A reversible temperature dependence has recently been observed in the electron and photon stimulated desorption (ESD and PSD) of Na from a lunar basalt sample. The observations were attributed to a temperature-related variations in binding sites with different desorption rates. We have now measured the reversible temperature-dependence of the ESD yields for neutral Na and K, and ionic Na+ and K+ from an SiO2 surface. The neutral desorption yields demonstrate opposite behavior from the lunar sample, which is presumably associated with different desorption mechanisms. The sticking probability S for atomic K is nearly constant over the substrate temperature range 100 500 K, whereas S for Na decreases with increasing T in this range. To clarify the charge-transfer desorption mechanism, we compare the DIET of monovalent atoms (Na, K) and divalent atoms (Ba). The threshold for ESD of Ba is ˜25 eV, much higher than that for Na, K (3 and 4 eV).

  19. Study of the picosecond laser damage in HfO2/SiO2-based thin-film coatings in vacuum

    NASA Astrophysics Data System (ADS)

    Kozlov, A. A.; Papernov, S.; Oliver, J. B.; Rigatti, A.; Taylor, B.; Charles, B.; Smith, C.

    2016-12-01

    The laser damage thresholds of various HfO2/SiO2-based thin film coatings, including multilayer dielectric (MLD) gratings and high reflectors of different designs, prepared by E-beam and Plasma Ion Assisted Deposition (PIAD) methods, were investigated in vacuum, dry nitrogen, and after air-vacuum cycling. Single and multiple-pulse damage thresholds and their pulse-length scaling in the range of 0.6 to 100 ps were measured using a vacuum damage test station operated at 1053nm. The E-beam deposited high reflectors showed higher damage thresholds with square-root pulse-length scaling, as compared to PIAD coatings, which typically show slower power scaling. The former coatings appeared to be not affected by air/vacuum cycling, contrary to PIAD mirrors and MLD gratings. The relation between 1-on-1 and N-on-1 damage thresholds was found dependent on coating design and deposition methods.

  20. Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Razeghi, M.

    2010-03-01

    Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

  1. Thickness of the {SiO2}/{Si} interface and composition of silicon oxide thin films: effect of wafer cleaning procedures

    NASA Astrophysics Data System (ADS)

    Stedile, F. C.; Baumvol, I. J. R.; Oppenheim, I. F.; Trimaille, I.; Ganem, J.-J.; Rigo, S.

    1996-09-01

    We determined the areal density of Si atoms constituting the oxide-silicon interface and the stoichiometry of ultra-thin silicon oxide films, thermally grown on Si(001) in dry 18O 2 atmospheres, using the channeling of α-particles along the <001> axis of the Si substrates associated with grazing angle detection of the scattered particles. The amount of 18O atoms in the films was determined independently using the 18O(p,α) 15N nuclear reaction at 730 keV. The Si wafers were submitted to different cleaning procedures before oxidation in 18O 2, namely: standard RCA cleaning, HF etching followed by a rinse in ethanol and rapid thermal cleaning (RTC) under high vacuum. The stoichiometry of all oxide films having thicknesses between 2 and 13 nm could be fitted assuming a ratio {O}/{Si} = 2 , that is, the films were constituted by silicon dioxide. By comparing the results for samples cleaned in different ways, however, we noticed a pronounced change in the number of atoms in the non-registered Si layers at the {SiO2}/{Si} interface and so in the thickness of these interfaces.

  2. Effects of defects generated in ALD TiO2 films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum

    NASA Astrophysics Data System (ADS)

    Won, Sanghee; Go, Seunghee; Lee, Wonhee; Jeong, Kyunghoon; Jung, Hyunsuk; Lee, Chongmu; Lee, Eungu; Lee, Jaegab

    2008-12-01

    Thin TiO2 layers grown at 130°C on SiO2-coated Si substrates by atomic layer deposition (ALD) using TTIP and H2O as precursors were annealed, and the effects of the annealing temperature on the resulting electrical properties of TiO2 and the interface properties between a Pt electrode and TiO2 were examined using transmission line model (TLM) structures. The as-deposited TiO2 thin film had an amorphous structure with OH groups and a high resistivity of 6×103Ω-cm. Vacuum annealing at 700 °C transformed the amorphous film into an anatase structure and reduced its resistivity to 0.04Ω-cm. In addition, the vacuum-annealing of the TiO2/SiO2 structure at 700°C produced free silicon at the TiO2-SiO2 interface as a result of the reaction between the Ti interstitials and SiO2. The SiO2 formed on the TiO2 surface caused a Schottky contact, which was characterized by the TLM method. The use of the TLM method enabled the accurate measurement of the resistivity of the vacuum-annealed TiO2 films and the characterization of the Schottky contacts of the metal electrode to the TiO2.

  3. CPMV-induced synthesis of hollow mesoporous SiO2 nanocapsules with excellent performance in drug delivery.

    PubMed

    Kumar, Koushi; Kumar Doddi, Shanmukha; Arunasree, Marasanapalli Kalle; Paik, Pradip

    2015-03-07

    Hollow mesoporous-SiO2 nanocapsules have been synthesized at room temperature using unmodified cowpea Mosaic Virus (CPMV) as a template, and without using any catalyst or surfactant during the synthesis. The average size of the capsules synthesized was ∼200-250 nm with a 60-100 nm hollow core. The resulting nanocapsules were characterized using high resolution transmission electron microscopy (HRTEM). The biocompatibility of the hollow mesoporous SiO2 nanocapsules was investigated with an MTT assay using the RAW 264.7 cells, HepG2 cells (human liver carcinoma cells), and Hek293 cells (human embryonic kidney cells). The nanocapsules were loaded with fluorescent molecules (rhodamine 6G), doxorubicin (DOX) – an anticancer drug, and chloroquine diphosphate (CQDP) – an antimalarial drug, and their release was studied using a UV-Vis spectrometer. The development of surfactant free, bio-safe, hollow and mesoporous SiO2 nanocapsules with CPMV provides a route for the synthesis of porous nanocapsules for drug loading and the sustained delivery of drugs. The synthesis method for hollow mesoporous SiO2 nanocapsules using CPMV is novel, straightforward, and further demonstrates that, in general, nanoformulated capsules can be used for various drug-delivery-based therapeutic applications. To check the in vitro efficacy in medical biotechnology, Hek293 and HepG2 cell lines were used to study the cell viability of DOX-loaded hollow silica nanocapsules. The results show that the bio SiO2 nanocapsules synthesized with CPMV present an effective cargo and are suitable for nanoformulating with DOX, with the resultant nanoformulation showing good promise for killing cancer specific cells.

  4. Pump-probe optical switching in prism-coupled Au :SiO2 nanocomposite waveguide film

    NASA Astrophysics Data System (ADS)

    Lee, Kyeong-Seok; Lee, Taek-Sung; Kim, Won-Mok; Cho, Sunghun; Lee, Soonil

    2007-10-01

    The resonance properties due to the surface plasmon excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultrasensitive operation of optical switches based on a guided wave, the application of nanocomposite film has inherent limitation originating from the excessive optical loss related to the surface plasmon resonance. In this study, we address this problem and present the experimental and theoretical analyses on the pump-probe optical switching in prism-coupled Au(1vol%):SiO2 nanocomposite waveguide film.

  5. High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

    NASA Technical Reports Server (NTRS)

    Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

    1990-01-01

    Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

  6. Stress measurement of deposited SiO2 films on a silicon wafer using dimensional-stability holographic interferometry test

    NASA Astrophysics Data System (ADS)

    Dovgalenko, George E.; Haque, M. S.; Kniazkov, Anatoli; Onischenko, Yuri I.; Salamo, Gregory J.; Naseem, Hameed A.

    1997-11-01

    In quality control nondestructive techniques gain more and more importance. Holographic interferometry has the advantage of being very sensitive and can be used contactless for inspection of technical components. The interferogram contains fringes, whose pattern holds information about the surface deformation of a part subjected to the load. The load in case of deposited silicone oxide film is cased by stress produced different thermal expansion temperature coefficients film and silicone substrate. Change in stress in thin silicon dioxide films was observed using a high stability portable holographic interferometer using dimension stability test. Pattern recognition algorithm for synthesis of stress analyses map is reported. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. Correlation of differential stress with initial flatness deviation of Si wafer has been discovered. The advantages of the proposed measuring technique and results are discussed.

  7. [Stimulated emission characteristics of ZnO thin films deposited by magnetron sputtering on SiO2 substrates].

    PubMed

    Jing, Wang; Xi-qing, Zhang; Xiao-ying, Teng; De-ping, Xiong; Peng, Lin; Li, Wang; Shi-hua, Huang

    2004-07-01

    ZnO thin films were deposited by magnetron sputtering on SiQ2 substrates. The temperature dependence of the absorption spectra and the photoluminescence spectra was studied for ZnO thin film. The absorption of the longitudinal optical (LO) phonons and the free-excitons was observed at room temperature. The free-exciton emission was only observed in PL spectra at room temperature, the results indicate that ZnO thin films have excellent quality and low density of defects. The stimulated emission properties of ZnO thin films were investigated. When excitation intensity is above threshold, the FWHM o f stimulated emission peak increases and stimulated emission peak shows red shift with increasing excitation intensity. Our analysis shows that the optical gain is due to electronhole plasma emission.

  8. Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone.

    PubMed

    Kim, Jae-Kyung; Jin, Kwangsun; Jung, Jongwan; Rha, Sa-Kyun; Lee, Won-Jun

    2012-04-01

    We examined the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to tetrakis(ethylamino)silane [Si(NHC2H5)4] and O3. The growth kinetics of silicon oxide films was examined at substrate temperatures ranging from 325 to 514 degrees C. The deposition was governed by a self-limiting surface reaction, and the growth rate at 478 degrees C was saturated at 0.17 nm/cycle for Si(NHC2H5)4 exposures of 2 x 10(6) L (1 L = 10(-6) Torr x s). The films deposited at 365-404 degrees C exhibited a higher deposition rate of 0.20-0.21 nm/cycle. However, they contained impurities, such as carbon and nitrogen, and showed poor film qualities. The concentration of impurities decreased with increasing substrate temperature. It was found that the films deposited in the high-temperature regime (478-514 degrees C) showed excellent physical and electrical properties equivalent to those of LPCVD films.

  9. Fabrication of mechanically robust, self-cleaning and optically high-performance hybrid thin films by SiO2&TiO2 double-shelled hollow nanospheres

    NASA Astrophysics Data System (ADS)

    Yao, Lin; He, Junhui; Geng, Zhi; Ren, Tingting

    2015-07-01

    Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings.Low-cost antireflection (AR) thin films on large-area optical surfaces are important for high-performance optical devices, display devices and photovoltaic cells. In the current work, SiO2&TiO2 double-shell hollow nanospheres (DSHNs) were designed, synthesized and utilized as building blocks for fabricating multifunctional AR thin films. By optimizing the porosity of SiO2&TiO2 DSHN and thin film structure, substrates with DSHN thin films attained transmittance as high as 99.4% and average transmittance up to 98.5% in the visible region. The nano-composite SiO2-TiO2 films exhibited intrinsic superhydrophilicity, anti-fogging and high photocatalytic activity. Tape peeling test, sponge washing test, and high temperature and moisture proof test showed favorable robustness and functional durability of the thin films, which make them extremely attractive for applications in lenses, photovoltaic cells and windows of high-rise buildings. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02467f

  10. Rational Design and Construction of Well-Organized Macro-Mesoporous SiO2/TiO2 Nanostructure toward Robust High-Performance Self-Cleaning Antireflective Thin Films.

    PubMed

    Jin, Binbin; He, Junhui; Yao, Lin; Zhang, Yue; Li, Jing

    2017-05-24

    Antireflection (AR) thin films on optical substrates are of great significance in high-performance optoelectronic devices. Here, we present a rational design and construction of well-organized macro-mesoporous nanostructure toward robust high-performance self-cleaning antireflective thin films on the basis of effective medium theory and finite difference time domain (FDTD) simulations that combine the optical design principle. A hierarchical macro-mesoporous SiO2 thin film with very high porosity and gradient refractive indexes works as a λ/4-wavelength AR layer and significantly suppresses the reflection in the range from 350 to 1200 nm. Even after dip-coating a layer of high refractive index TiO2 nanocrystals, the nanostructured thin film still exhibits broadband AR properties which are much superior to conventional flat SiO2/TiO2 thin films, especially in the range of 350-500 nm. In addition, the obtained thin film exhibits photocatalytic self-cleaning and durable superhydrophilicity. The advantages brought by the well-organized macro-mesoporous structure are also testified through comparing to the solely mesoporous SiO2/TiO2 film counterpart. Moreover, the pencil hardness test and sandpaper abrasion test show favorable robustness and functional durability of the thin film, which make it extremely attractive for practical applications in optical devices, display devices, and photovoltaic cells.

  11. Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

    NASA Astrophysics Data System (ADS)

    Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

    2015-02-01

    Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

  12. Optical and physical properties of solgel-derived GeO2:SiO2 films in photonic applications.

    PubMed

    Ho, Charles K F; Pal, Rajni; Djie, H S; Pita, Kantisara; Ngo, Nam Quoc; Osipowicz, T

    2007-07-10

    The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO(2):(1-x)SiO(2)) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05

  13. Optical properties of ion-beam-synthesized Au nanoparticles in SiO2 matrix

    NASA Astrophysics Data System (ADS)

    Hsieh, Chang-Lin; Oyoshi, Keiji; Chao, Der-Sheng; Tsai, Hsu-Sheng; Hong, Wei-Lun; Takeda, Yoshihiko; Liang, Jenq-Horng

    2016-05-01

    In recent years, gold (Au) nanoparticles have been synthesized via various methods and used in optical and biomedical detection. Au nanoparticles contain some remarkable dimension-dependent optical properties due to surface plasmon resonance (SPR) in Au nanoparticles which causes high absorption in visible light regions. Since SPR in well-crystallized Au nanoparticles can enhance the local electromagnetic field, it is thus expected that greater efficiency in the photoluminescence (PL) originating from oxygen deficiency centers (ODC) can be achieved in Au-implanted SiO2 matrix. In order to demonstrate the enhancement of PL, Au nanoparticles were formed in SiO2 film using ion beam synthesis and their optical and microstructural properties were also investigated in this study. The results revealed that a clear absorption peak at approximately 530 nm was identified in the UV-Vis spectra and was attributed to SPR induced by Au nanoparticles in SiO2. The SPR of Au nanoparticles is also dependent on thermal treatment conditions, such as post-annealing temperature and ambient. The Au nanoparticle-containing SiO2 film also displayed several distinctive peaks at approximately 320, 360, 460, and 600 nm in the PL spectra and were found to be associated with ODC-related defects and non-bridging oxygen hole centers (NBOHC) in SiO2. In addition, the PL peak intensities increased as post-annealing temperature increased, a finding contradictory to the defect recovery but highly consistent with the SPR tendency. A maximum PL emission was achieved when the Au-implanted SiO2 film was annealed at 1100 °C for 1 h under N2. Therefore, the existence of Au nanoparticles in SiO2 film can induce SPR effects as well as enhance PL emission resulting from defect-related luminescence centers.

  14. Continuous ultrathin silver films deposited on SiO2 and SiNx using a self-assembled monolayer

    NASA Astrophysics Data System (ADS)

    Hafezian, Soroush; Maloney, Kate; Lefebvre, Josianne; Martinu, Ludvik; Kéna-Cohen, Stéphane

    2016-09-01

    In this letter, we study the deposition of ultrathin silver films on silicon oxide and nitride surfaces functionalized with self-assembled monolayers of (3-mercaptopropyl)-trimethoxysilane. First, we compare both solution and vapour-phase functionalization techniques and find the greatest improvement in electrical and optical properties using deposition from solution. Using X-ray photoelectron spectroscopy, we demonstrate that the formation of silver-sulfur covalent bonds is at the root of the improved wetting confirmed by ellipsometry, sheet resistance measurement, and atomic force microscopy. Second, we show that this technique can be extended to functionalize silicon nitride. Finally, we demonstrate a simple, but efficient, low-emissivity optical filter.

  15. Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

    NASA Astrophysics Data System (ADS)

    Jambois, O.; Berencen, Y.; Hijazi, K.; Wojdak, M.; Kenyon, A. J.; Gourbilleau, F.; Rizk, R.; Garrido, B.

    2009-09-01

    We have studied the current transport and electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10-3%.

  16. Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films

    NASA Astrophysics Data System (ADS)

    Abedrabbo, S.; Fiory, A. T.; Ravindra, N. M.

    2017-02-01

    Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol-gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol-gel-deposited silica. Comparative studies with other strained silicon samples are presented.

  17. Ultrathin-layer chromatography on SiO(2), Al(2)O(3), TiO(2), and ZrO(2) nanostructured thin films.

    PubMed

    Wannenmacher, Julia; Jim, Steven R; Taschuk, Michael T; Brett, Michael J; Morlock, Gertrud E

    2013-11-29

    We explored four different inorganic oxides and determined their merits in miniaturized planar chromatography. Despite progression of chromatographic techniques over several decades, such alternatives to traditional planar silica gel stationary phases have not been fully evaluated. Glancing angle deposition(GLAD) provided an excellent platform for engineering nanostructured thin films in these materials for ultrathin-layer chromatography (UTLC). Separations of carotenoids and synthetic food dyes were used to investigate the attributes of SiO(2), Al(2)O(3), TiO(2), and ZrO(2)GLAD UTLC media. These anisotropic high surface area thin films possessed similar channel-like features but different chromatographic properties.TiO(2)and ZrO(2)media were especially interesting since analyte retention could be modified through sim-ple oxidation heat treatments and UV irradiation. Generally, oxidation reduced analyte retention while UV exposure increased retention. Changes in retention factor as large as ΔhRF∼ 40 (for Acid Red 14 on titanium oxide) were achieved. Food dye mixtures were applied using consumer inkjet printers as per the Office Chromatography concept and separation performance was quantified using advanced video instrumentation designed for miniaturized plates. Enhanced time-resolved UTLC methods were used to calculate figures of merit from recorded dye separation videos. Small theoretical plate heights (<4 μm)and low limits of detection (<2 ng per zone for the food dye tartrazine) were measured. The combination of engineered GLAD UTLC plates, inkjet application of analyte spots, time-resolved UTLC, and custom analysis algorithms enabled some of the best performance achieved on GLAD UTLC layers. Separations on the inorganic oxide thin films were also successfully hyphenated with electrospray ionization mass spectrometry for the first time. This investigation demonstrates the utility of alternative inorganic oxide GLADUTLC media and probes avenues of expanding

  18. The Study of Femtosecond Laser Irradiation on GaAs Solar Cells With TiO2/SiO2 Anti-Reflection Films

    NASA Astrophysics Data System (ADS)

    Hua, Yinqun; Shi, Zhiguo; Wu, Wenhui; Chen, Ruifang; Rong, Zhen; Ye, Yunxia; Liu, Haixia

    Femtosecond laser ablation on GaAs solar cells for space power has been investigated. In particular, we studied the effects of laser energy and laser number on the ablation of solar cells. Furthermore, the morphologies and microstructure of ablation were characterized by the non-contact optical profilometer and scanning electron microscope (SEM). The photovoltaic properties were tested by the volt ampere characteristic test system. The abaltion threshold of the TiO2/SiO2 anti-reflection film of GaAs solar cells was obtained from the linear fit of the dependence of the square diameter of the ablated area with the natural logarithm of the femtosecond laser pulse energy, the resulting threshold of the laser fluence is about 0.31J/cm2, and the corresponding energy is 5.4uJ. The ablation depth showed nonlinear dependence of energy. With the fixed energy 6uJ and the increasing laser number, the damage degree increases obviously. Furthermore, the electric properties also suffer a certain degradation. Among all the evaluated electric properties, the photoelectric conversion efficiency (η) degraded remarkably.

  19. Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO2 Film for Emission at 614 nm

    PubMed Central

    Pita, Kantisara

    2017-01-01

    In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu3+ ions by fabricating thin-film samples of ZnO-nc and Eu3+ ions embedded in a SiO2 matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu3+ ions which results in the radiative emission from the Eu3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu3+ ions. PMID:28796195

  20. Nonlinear optical properties and surface-plasmon enhanced optical limiting in Ag-Cu nanoclusters co-doped in SiO2 Sol-Gel films

    NASA Astrophysics Data System (ADS)

    Kiran, P. Prem; Shivakiran Bhaktha, B. N.; Rao, D. Narayana; De, Goutam

    2004-12-01

    The nonlinear optical properties and the role of the surface-plasmon resonance (SPR) on optical limiting (OL) properties of Ag -Cu nanoclusters co-doped in SiO2 matrix prepared using the sol-gel technique with a Cu /Ag molar ratio of 1, 2 and 3, respectively, are presented. The studies were made using the second harmonic of high-power nanosecond and picosecond Nd :YAG lasers. These films show a self-defocusing nonlinearity with both nanosecond and picosecond pulses and a good nonlinear absorption behavior with the nanosecond pulse excitation. The nonlinear refractive index decreased with decreasing particle size, whereas the nonlinear absorption increased with an increase in Cu concentration. The observed nonlinear absorption is explained by taking into account the cumulative effect of both the intraband and interband mechanisms. The excitation near the SPR of Cu resulted in an enhanced OL behavior with increasing Cu concentration. No such concentration dependence is observed when the excitation is near the SPR of Ag, however, the limiting threshold is reduced approximately 10-17 times. Excitation at wavelengths far below the SPR of Ag and Cu has not shown any OL behavior. The major contribution toward OL is observed to be from the interband absorption and from a possible energy transfer within the higher unoccupied states of Cu and Ag. Although nonlinear scattering is observed at higher intensities, its contribution is found to be much less than that of the nonlinear absorption assisted by an energy transfer.

  1. Intensified magneto-resistance by rapid thermal annealing in magnetite (Fe3O4) thin film on SiO2 glass substrate

    NASA Astrophysics Data System (ADS)

    Kobori, H.; Morii, K.; Yamasaki, A.; Sugimura, A.; Taniguchi, T.; Horie, T.; Naitoh, Y.; Shimizu, T.

    2012-12-01

    We have observed large magneto-resistance (MR) intensified by rapid thermal annealing (RTA) in magnetite (Fe3O4) thin film (MTF) on SiO2 glass (a-SiO2) substrate. The MTF was produced by the RF magnetron sputtering method by using a magnetite target. The electrical resistivity (ER) of as-grown MTF (AG-MTF) showed the Mott's variable range hopping behavior, which implies that the AG-MTF is amorphous-like. Although the magneto-resistance (MR) ratio of bulk single crystal is very small except around the Verwey transition temperature (VTT), that of the AG-MTF showed moderately large below room temperature. Due to RTA of the AG-MTF by use of an IR image furnace, the MR ratio of MTFs was intensified, and especially by the annealing around the Curie temperature (585°C) of magnetite. Furthermore the ER of the rapid thermally annealed MTF (RTA-MTF) showed a slight kink at around the VTT, which indicates that the crystallinity of the RTA-MTF is higher than that of the AG-MTF The MTF produced by the RF magnetron sputtering method are composed of magnetite fine particles (MFPs). We consider that the directions of magnetic moments of MFPs in the MTF were spatially randomized by the RTA and the strong spin scattering of itinerant electrons transferring between adjacent MFPs caused the intensification of the MR ratio.

  2. Preparation of fullerene (C60) based SiO2 sonogel hybrid composites: UV laser induced photo-polymerization, morphological, and optical properties.

    PubMed

    Morales-Saavedra, Omar G; Castañeda, Rosalba; Bañuelos, J Guadalupe; Carreón-Castro, Ma del Pilar

    2008-07-01

    Fullerene (C60) spheres were successfully embedded by diffusion into a catalyst-free SiO2 sonogel network. By this method, homogeneous and stable solid state hybrid samples suitable for optical characterization were produced. Due to the high porosity exhibited by the sonogel matrix on the nanometric length-scale, the preparation of several C60 doped composites with variable dopant concentrations was achieved. The obtained bulk hybrids were irradiated with a pulsed Kr-F laser system in order to induce photo-polymerization of the implanted C60 guest molecules at optimal experimental conditions established according to the pulsed laser photoacoustic technique (LPAT). The adequate purity level displayed by the sonogel route allowed us to perform optimal optical characterizations of these composites (reference hybrids and photo-polymerized samples) in order to evaluate their photo-physical properties for potential photonic applications. In this work the sonolysis process used to prepare amorphous catalyst-free SiO2:C60 sonogel hybrids and their linear and nonlinear optical (NLO) properties are extensively discussed. UV-VIS absorption-, Photo Luminescent (PL)-, and Raman-spectroscopies in conjunction with nonlinear optical limiting (OL) measurements, gave experimental evidence of the inclusion of C60 molecules within the sonogel environment, the laser induced photo-polymerization process and the induced changes of the optical and NLO-properties. Results are discussed in combination with atomic force microscopy (AFM) studies in order to explore the surface morphology of these samples.

  3. Shock-induced transformations in the system NaAlSiO4-SiO2 - A new interpretation

    NASA Technical Reports Server (NTRS)

    Sekine, Toshimori; Ahrens, Thomas J.

    1992-01-01

    New internally consistent interpretations of the phases represented by the high pressure phase shock wave data for an albite-rich rock, jadeite, and nepheline in the system NaAlSiO4-SiO2, are obtained using the results of static high pressure investigations, and the recent discovery of the hollandite phase in a shocked meteorite. We conclude that nepheline transforms directly to the calcium ferrite structure, whereas albite transforms possibly to the hollandite structure. Shock Hugoniots for the other plagioclase and alkali feldspars also indicate that these transform to hollandite structures. The pressure-volume data at high pressure could alternatively represent the compression of an amorphous phase. Moreover, the shock Hugoniot data are expected to reflect the properties of the melt above shock stresses of 60-80 GPa. The third order Birch-Murnaghan equation of state parameters are given for the calcium ferrite type NaAlSiO4 and for albite-rich, orthoclase-rich, and anorthite-rich hollandites.

  4. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

    DOE PAGES

    Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji; ...

    2016-09-02

    The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated in this paper for both GeO2/Ge and SiO2/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ~15%. The increase in the energy shift is more significant for thermal GeO2 on Ge than for thermal SiO2 on Si above ~10-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO2 film to form hydroxyls. Analyzing the origins of this energy shift, we propose thatmore » the positive charging of a partially hydroxylated GeO2 film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO2/Ge than for SiO2/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO2 film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. Finally, this may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO2 layer.« less

  5. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji; Kawai, Kentaro; Morita, Mizuho; Crumlin, Ethan J.; Liu, Zhi; Watanabe, Heiji; Arima, Kenta

    2016-09-01

    The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated for both GeO2/Ge and SiO2/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ˜15%. The increase in the energy shift is more significant for thermal GeO2 on Ge than for thermal SiO2 on Si above ˜10-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO2 film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO2 film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO2/Ge than for SiO2/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO2 film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. This may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO2 layer.

  6. Peculiarities of the electronic structure and phase composition of amorphous (SiO2) x (a-Si: H) x-1 composite films according to X-ray spectroscopy data

    NASA Astrophysics Data System (ADS)

    Terekhov, V. A.; Parinova, E. V.; Domashevskaya, E. P.; Sadchikov, A. S.; Terukov, E. I.; Undalov, Yu. K.; Sen'kovskii, B. V.; Turishchev, S. Yu.

    2015-10-01

    Amorphous (SiO2) x (a-Si: H) x-1 composite films have been deposited from plasma of dc magnetron discharge switched on and off for variable periods of time. The electronic structure and phase composition of obtained films were studied by methods of ultrasoft X-ray emission spectroscopy (USXES) and X-ray absorption near edge structure (XANES) spectroscopy using synchrotron radiation. The results of a qualitative and semiquantitative analysis of the phase composition of films with the use of a special method of computer simulation showed that the content of amorphous a-Si: H clusters in SiO2 matrix can be varied within wide limits by changing the period of dc magnetron discharge switching. It is established that the formation of a large number of silicon nanoclusters in the (SiO2) x (a-Si: H) x-1 composite film leads to the appearance of anomalies in the XANES spectra, which are related to the scattering of synchrotron radiation on nanoclusters with dimensions comparable to the radiation wavelength near the X-ray absorption edge of silicon.

  7. A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

    NASA Astrophysics Data System (ADS)

    Zhang, Yuanyuan; Yang, Tao; Yan, Xiaobing; Zhang, Zichang; bai, Gang; Lu, Chao; Jia, Xinlei; Ding, Bangfu; Zhao, Jianhui; Zhou, Zhenyu

    2017-05-01

    In this study, we present a metal/Ba0.6Sr0.4TiO3/SiO2/Si (MBOS) structure for charge trapping memory, where the single Ba0.6Sr0.4TiO3 film acts as the blocking layer and charge trapping layer. This MBOS device structure demonstrates excellent charge trapping characteristics, a large memory window up to 8.4 V under an applied voltage of ±12 V, robust charge retention of only 4% charge loss after 1.08 × 104 s, fast switching rate, and great program/erase endurance. These attractive features are attributed to the high density of defect states in the Ba0.6Sr0.4TiO3 film and its inter-diffusion interface with SiO2. The properties of defect states in the Ba0.6Sr0.4TiO3 film are investigated through measurements of photoluminescence and photoluminescence excitation spectroscopy. The energy levels of these defect states are found to be distributed between 2.66 eV and 4.05 eV above the valence band. The inter-diffusion at the Ba0.6Sr0.4TiO3/SiO2 interface is observed by high-resolution transmission electron microscopy. More defect sites were created to obtain a better charge trapping capability and retention characteristics.

  8. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  9. [Study on the damage of SiO2 thin films on LiNbO3 crystal in optical parametric oscillator by XRD spectrometry].

    PubMed

    Niu, Rui-Hua; Han, Jing-Hua; Luo, Jin; Lu, Feng; Zhu, Qi-Hua; Li, Tong; Yang, Li-Ming; Feng, Guo-Ying; Zhou, Shou-Huan

    2010-12-01

    In an attempt to elucidate the damage in high transmission thin films on LiNbO3 crystal in optical parametric oscillator, the authors employed XRD spectrometry to investigate the spectrum of laser-induced damage in thin film as well as the morphology of the damage. The authors observed that the damage of thin film was characterized by the depressions/craters in the surface of the films, which were surrounded by a deposition layer with the deceasing thickness from the center of the craters. The XRD measurements indicate that the film was crystallized. The authors analyzed the causes of morphologies and the mechanism of crystallization with the aid of the model for impurity-induced damage in thin solid films. The crystallization was due to the solidification of liquid and gaseous mixtures that result from the strong absorbing to the incident laser. The crater was generated because the mixtures were ejected under the extensive pressure of the laser plasma shock wave. During the process that the mixtures deposit around the craters, the density of the mixtures will decrease and crystallization takes place. As a result, the color of the deposition layer becomes lighter from inside to outside, and the crystallization of the thin film materials was observed by XRD spectrometry.

  10. Large O2 Cluster Ions as Sputter Beam for ToF-SIMS Depth Profiling of Alkali Metals in Thin SiO2 Films.

    PubMed

    Holzer, Sabine; Krivec, Stefan; Kayser, Sven; Zakel, Julia; Hutter, Herbert

    2017-02-21

    A sputter beam, consisting of large O2 clusters, was used to record depth profiles of alkali metal ions (Me(+)) within thin SiO2 layers. The O2 gas cluster ion beam (O2-GCIB) exhibits an erosion rate comparable to the frequently used O2(+) projectiles. However, because of its high sputter yield the necessary beam current is considerably lower (factor 50), resulting in a decreased amount of excess charges at the SiO2 surface. Hence, a reduced electric field is obtained within the remaining dielectric layer. This drastically mitigates the Me(+) migration artifact, commonly observed in depth profiles of various dielectric materials, if analyzed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) in dual beam mode. It is shown, that the application of O2-GCIB results in a negligible residual ion migration for Na(+) and K(+). This enables artifact-free depth profiling with high sensitivity and low operational effort. Furthermore, insight into the migration behavior of Me(+) during O2(+) sputtering is given by switching the sputter beam from O2(+) to O2 clusters and vice versa. K(+) is found to be transported through the SiO2 layer only within the proceeding sputter front. For Na(+) a steadily increasing fraction is observed, which migrates through the unaffected SiO2 layer toward the adjacent Si/SiO2 interface.

  11. Statistical study of single and multiple pulse laser-induced damages of HfO2/SiO2 AR coatings at 1064 nm

    NASA Astrophysics Data System (ADS)

    Liu, Wenwen; Wei, Chaoyang; Chen, Shunli; Fang, Zhou; Yi, Kui; Shao, Jianda

    2013-08-01

    Multiple laser irradiations induce a critical issue as regards the lifetime of optical components. HfO2/SiO2 AR coatings for 1064 nm were prepared by conventional electron beam deposition. The evolution of laser-induced damage threshold (LIDT) and 100% damage probability threshold with shot numbers were investigated to illustrate the incubation mechanism of defect-induced damages and the intrinsic material modifications of coatings. It was found that the multi-shot LIDTs were lower than that of single-shot because of "fatigue effect". The 100% damage probability threshold also decreased with increasing shot numbers. This incubation phenomenon implied laser-induced modifications to the coating material that weaken it to subsequent pulse exposures. LID probability curves simulated with a statistical model assuming Gaussian distribution of defect threshold were used to highlight information on defects. Simulation results showed that the thresholds of different kinds of defects decreased with the increase of shot numbers. Optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profiler were employed in mapping damage morphology features and damage depth to discuss the initiators and mechanism of damage initiation. Additionally, damage regions were accessed by X-ray photoelectron spectroscopy (XPS) to indicate the changes in elemental content and valence of the materials with increasing pulse numbers.

  12. Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

    NASA Astrophysics Data System (ADS)

    Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

    2017-08-01

    We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

  13. Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics.

    PubMed

    Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

    2014-10-09

    Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics.

  14. Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics

    PubMed Central

    Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

    2014-01-01

    Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics. PMID:25297473

  15. Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films

    PubMed Central

    2011-01-01

    We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content. PMID:21711698

  16. Raman scattering studies of polycrystalline 3C-SiC deposited on SiO 2 and AlN thin films

    NASA Astrophysics Data System (ADS)

    Jeong, Junho; Jang, Kiwan; Lee, Ho Sueb; Chung, Gwiy-Sang; Kim, Gwi-yeol

    2009-01-01

    This paper describes the Raman scattering characteristics of the Raman spectra of 0.4- and 2.0-μm-thick polycrystalline (poly) 3C-SiC on AlN /Si and SiO 2/Si by using atmosphere pressure chemical vapor deposition (APCVD) with hexamethyldisilane (HMDS) and carrier gases (Ar+H 2). In the Raman spectra for all growth temperatures, the D and G peaks of nanocrystalline graphite were measured. The C/Si rate of poly 3C-SiC deposited in (Ar+H 2) atmosphere was higher than that in H 2 gas, although HMDS C/Si rate is 3. The biaxial stresses of 2.0-μm-thick 3C-SiC on SiO 2 and AlN, which was deposited at the growth temperature of 1180 °C after annealing AlN at 800 and 1100 °C, were calculated as 428 and 896 MPa, respectively. Therefore, poly 3C-SiC should admix with nanocrystalline graphite due to the addition of Ar gas and poly 3C-SiC on SiO 2 should be better than on AlN for harsh environmental MEMS applications.

  17. Testing Asymmetry in Plasma-Ball Growth Seeded by a Nanoscale Absorbing Defect Embedded in a SiO2 Thin-Film Matrix Subjected to UV Pulsed-Laser Radiation

    SciTech Connect

    Papernov, S.; Schmid, A.W.

    2008-09-16

    Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO2 thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified.

  18. Laser induced sub-micron changes of the chemical composition of SiO2-based optical fibers

    NASA Astrophysics Data System (ADS)

    Fokine, Michael A.

    2003-11-01

    A method to create sub-micron changes of the chemical composition of silica based optical fibers is reviewed. The method is used to create thermally stable refractive index structures, Fiber Bragg gratings, which can be used e.g. as sensors operating at very high temperatures. The method is based on UV induced chemical reactions of the silica glass with in-diffused molecular hydrogen. A change in the chemical composition is attained after thermal treatment, and the mechanism is attributed to diffusion of hydrogen compounds within the glass.

  19. The FTIR studies of gels and thin films of Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems.

    PubMed

    Adamczyk, Anna; Długoń, Elżbieta

    2012-04-01

    In this work, samples in form of bulk ones and thin films were obtained using the sol-gel method. The bulk samples were heated at different temperatures (500 °C, 850 °C and 1100 °C) corresponding to the annealing process of coatings, deposited on different substrates by dipping and pulling out samples from the proper sol with the stable speed. Thin films of both Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems were deposited on carbon, steel and titanium substrates in two different ways: as single layers obtained from Al2O3 sol, TiO2 sol and Al2O3 sol or deposited as mixed coatings from Al2O3-TiO2 sol as well as Al2O3-TiO2-SiO2 one. All bulk samples were studied by the FTIR spectroscopy and the X-ray diffractometry while thin films were also investigated by the electron microscopy. In the IR spectra of Al2O3-TiO2 samples, as well as gels and coatings, bands due to the vibrations of AlO bonds of the octahedrally and tetrahedrally coordinated aluminum were observed. The IR spectra of samples of Al2O3-TiO2-SiO2 system differ from that of Al2O3-TiO2 ones in presence of bands assigned to the SiO bond vibrations and in positions of bands due to AlO bond vibrations. In all spectra of bulk samples and coatings, the positions of TiO bond vibrations were ascribed basing on the IR spectra of the pure anatase and rutile.

  20. Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Wong, Kin Mun

    In this article, a simple, low cost and combined surface treatment method [pre-oxidation immersion of the p-type silicon (Si) substrate in hydrogen peroxide (H2O2) and post oxidation ultra-violet (UV) irradiation of the silicon-dioxide (SiO2) film] at room temperature is investigated. The interface trap density at midgap [Dit(mg)] of the resulting SiO2 film (denoted as sample 1A) is quantified from the full width at half-maximum of the scanning capacitance microscopy (SCM) differential capacitance (dC/dV) characteristics by utilizing a previously validated theoretical model. The Dit(mg) of sample 1A is significantly lower than the sample without any surface treatments which indicates that it is a viable technique for improving the interfacial quality of the thicker SiO2 films prepared by wet oxidation. Moreover, the proposed combined surface treatment method may possibly complement the commonly used forming gas anneal process to further improve the interfacial quality of the SiO2 films. The positive shift of the flatband voltage due to the overall oxide charges (estimated from the probe tip dc bias at the peak dC/dV spectra) of sample 1A suggests the presence of negative oxide fixed charge density (Nf) in the oxide. In addition, an analytical formula is derived to approximate the difference of the Nf values between the oxide samples that are immersed in H2O2 and UV irradiated from their measured SCM dC/dV spectra. Conversely, some physical mechanisms are proposed that result in the ionization of the SiO- species (which are converted from the neutral SiOH groups that originate from the pre-oxidation immersion in H2O2 and ensuing wet oxidation) during the UV irradiation as well as the UV photo-injected electrons from the Si substrate (which did not interact with the SiOH groups). They constitute the source of mobile electrons which partially passivate the positively charged empty donor-like interface traps at the Si-SiO2 interface.

  1. Enhanced and Retarded SiO2 Growth on Thermally Oxidized Fe-Contaminated n-Type Si(001) Surfaces

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Hagiwara, Hiroyuki

    2013-04-01

    At the beginning of the oxidation of Fe-contaminated n-type Si(001) surfaces, Fe reacted with oxygen (O2) on the silicon (Si) substrate to form Fe2O3 and oxygen-induced point defects (emitted Si + vacancies). SiO2 growth was mainly enhanced by catalytic action of Fe. At 650 °C, SiO2 growth of the contaminated samples was faster than in reference samples rinsed in RCA solution during the first 60 min. However, it substantially slowed and became less than that of the reference samples. As the oxidation advanced, approximately half of the contaminated Fe atoms became concentrated close to the surface area of the SiO2 film layer. This Fe2O3-rich SiO2 layer acted as a diffusion barrier against oxygen species. The diffusion of oxygen atoms toward the SiO2/Si interface may have been reduced, and in turn, the emission of Si self-interstitials owing to oxidation-induced strain may have been decreased at the SiO2/Si interface, resulting in the retarded oxide growth. These results are evidence that emitted Si self-interstitials are oxidized not in the Fe2O3-rich SiO2 layer, but at the SiO2/Si interface in accordance with a previously proposed model. A possible mechanism based on the interfacial Si emission model is discussed. The activation energies for the oxide growth are found to be in accord with the enhanced and reduced growths of the Fe-contaminated samples.

  2. Novel SiO2/H2Ti2O5·H2O-Nanochain Composite with High UV-Visible Photocatalytic Activity for Supertransparent Multifunctional Thin Films.

    PubMed

    Yao, Lin; He, Junhui; Li, Tong; Ren, Tingting

    2016-12-27

    In the current work, a peroxo titanium complex (PTC) solution was used as a novel water-soluble precursor to fabricate H2Ti2O5·H2O and the SiO2/H2Ti2O5·H2O-nanochain composite at low temperature (90-100 °C). The average width of H2Ti2O5·H2O nanochains is 4.5 ± 1.5 nm. Under full-spectrum irradiation, the Si/Ti-nanochain composite showed good UV-visible light absorption and excellent photocatalytic activity, which is 2.8 times that of P25. In the composite, SiO2 not only contributes to the formation of nanochains and improves the catalytic performance of H2Ti2O5·H2O but also reduces the refractive index of the complex. When coated on transparent organic substrates, the composite thin film exhibited excellent antireflective (as high as 99.3% on PC and 98.9% on PMMA) and self-cleaning properties. Pencil hardness, washing, and tape adhesion tests showed favorable adhesion-to-substrate and mechanical robustness of thin films, which make them extremely attractive for applications as highly transparent and self-cleaning thin films on lenses, photovoltaic cells, and windows of high-rise buildings.

  3. Time-resolved imaging of material response during laser-induced bulk damage in SiO2

    SciTech Connect

    Demos, S G; Negres, R A

    2008-10-24

    We report on time resolved imaging of the dynamic events taking place during laser-induced damage in the bulk of fused silica samples with nanosecond temporal resolution and one micron spatial resolution. These events include: shock/pressure wave formation and propagation, transient absorption, crack propagation and formation of residual stress fields. The work has been performed using a time-resolved microscope system that utilizes a probe pulse to acquire images at delay times covering the entire timeline of a damage event. Image information is enhanced using polarized illumination and simultaneously recording the two orthogonal polarization image components. For the case of fused silica, an electronic excitation is first observed accompanied by the onset of a pressure wave generation and propagation. Cracks are seen to form early in the process and reach their final size at about 25 ns into the damage event. In addition, changes that in part are attributed to transient absorption in the modified material are observed for delays up to about 200 microseconds.

  4. O atoms loss coefficient on porous SiO2 and TiO2 measured by plasma induced fluorescence

    NASA Astrophysics Data System (ADS)

    Allegraud, Katia; Gatilova, Lina; Guaitella, Olivier; Guillon, Jean; Rousseau, Antoine

    2006-10-01

    The time evolution of O atoms density in the gas phase during the post-discharge of a pulsed plasma is studied using a plasma induced fluorescence technique (PIF): a main long pulse creates the plasma and a shorter one re-excites atoms in the time post-discharge was used. The gas pressure is 133 Pa in N2/O2 mixture and the plasma is a pulsed DC discharge. The surface loss coefficient of O atoms on pyrex, porous silica, porous TiO2 is measured, this latter being a photocatalytic material. It is shown that the presence of porous silica or TiO2 leads to a stong increase of the O atom surface loss coefficient. When nano cluster of TiO2 are deposited on porous silica, the loss coefficient is first high and comparable to the case of the porous silica, but decreases after few milliseconds. Such a decrease of the surface loss coefficient has recently been reported in a pulsed microwave discharge [1]. The effect of the pre-irradiation of the porous materials by external ultraviolet is also studied. [1] G. Cartry, X. Duten and A. Rousseau Plasma Sources Sci. Technol. 15 (2006) 479--488

  5. Structural changes induced by lattice-electron interactions: SiO2 stishovite and FeTiO3 ilmenite.

    PubMed

    Yamanaka, Takamitsu

    2005-09-01

    The bright source and highly collimated beam of synchrotron radiation offers many advantages for single-crystal structure analysis under non-ambient conditions. The structure changes induced by the lattice-electron interaction under high pressure have been investigated using a diamond anvil pressure cell. The pressure dependence of electron density distributions around atoms is elucidated by a single-crystal diffraction study using deformation electron density analysis and the maximum entropy method. In order to understand the bonding electrons under pressure, diffraction intensity measurements of FeTiO3 ilmenite and gamma-SiO2 stishovite single crystals at high pressures were made using synchrotron radiation. Both diffraction studies describe the electron density distribution including bonding electrons and provide the effective charge of the cations. In both cases the valence electrons are more localized around the cations with increasing pressure. This is consistent with molecular orbital calculations, proving that the bonding electron density becomes smaller with pressure. The thermal displacement parameters of both samples are reduced with increasing pressure.

  6. Densification and residual stress induced by CO2 laser-based mitigation of SiO2 surfaces

    SciTech Connect

    Feit, M D; Matthews, M J; Soules, T F; Stolken, J S

    2010-10-21

    Knowing the ultimate surface morphology resulting from CO{sub 2} laser mitigation of induced laser damage is important both for determining adequate treatment protocols, and for preventing deleterious intensification upon subsequent illumination of downstream optics. Physical effects such as evaporation, viscous flow and densification can strongly affect the final morphology of the treated site. Evaporation is a strong function of temperature and will play a leading role in determining pit shapes when the evaporation rate is large, both because of material loss and redeposition. Viscous motion of the hot molten material during heating and cooling can redistribute material due to surface tension gradients (Marangoni effect) and vapor recoil pressure effects. Less well known, perhaps, is that silica can densify as a result of structural relaxation, to a degree depending on the local thermal history. The specific volume shrinkage due to structural relaxation can be mistaken for material loss due to evaporation. Unlike evaporation, however, local density change can be reversed by post annealing. All of these effects must be taken into account to adequately describe the final morphology and optical properties of single and multiple-pass mitigation protocols. We have investigated, experimentally and theoretically, the significance of such densification on residual stress and under what circumstances it can compete with evaporation in determining the ultimate post treatment surface shape. In general, understanding final surface configurations requires taking all these factors including local structural relaxation densification, and therefore the thermal history, into account. We find that surface depressions due to densification can dominate surface morphology in the non-evaporative regime when peak temperatures are below 2100K.

  7. Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im

    2015-11-01

    We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants ( ɛ r ) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ˜260 to ˜6000 and from ˜630 to ˜3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses ( tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model. [Figure not available: see fulltext.

  8. Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode

    NASA Astrophysics Data System (ADS)

    Satyalakshmi, K. M.; Varma, K. B. R.; Hegde, M. S.

    1995-07-01

    Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450 °C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450 °C on LNO/LAO and LNO/SiO2/Si were 2.5 μC/cm2, 37 kV/cm and 4.6μC/cm2, 93 kV/cm, respectively.

  9. Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate

    NASA Astrophysics Data System (ADS)

    Tan, Qiu-lin; Zhang, Wen-dong; Xue, Chen-yang; Liu, Jun; Li, Jun-hong; Xiong, Ji-jun

    2009-06-01

    Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate (PZT, Zr/Ti = 15/85) and lead titanate (PT), were fabricated. With three different combinations, namely, PZT, PT/PZT-PZT/PT, and PT/PZT/-/PZT/PT, three multilayer thin films were deposited on three Pt-Ti-Si3N4-SiO2-Si substrates by a modified sol-gel process. The fabrication process of the thin films is discussed in detail. We found that there is a large built-in stress in the thin film, which can be diminished by annealing at 600 °C, when the gel is turned into solid material through drying and sintering. The Raman scattering spectra of the films with different compositions and structures were investigated. With the help of X-ray diffraction (XRD) analyzer and Raman scattering spectra analyzer, it was found that the thin films with the PT/PZT-PZT/PT structure have reasonable crystallinity and less residual stress. XRD testing shows that the diffraction pattern of the multilayer film results from the superimposition of the PZT and PT patterns. This leads to the conclusion that the PT/PZT-PZT/PT multilayer thin film has a promising future in pyroelectric infrared detectors with high performance.

  10. SiO2 Nanoparticule-induced size-dependent genotoxicity - an in vitro study using sister chromatid exchange, micronucleus and comet assay.

    PubMed

    Battal, Dilek; Çelik, Ayla; Güler, Gizem; Aktaş, Ayça; Yildirimcan, Saadet; Ocakoglu, Kasim; Çömelekoǧlu, Ülkü

    2015-04-01

    Fine particles with a characteristic size smaller than 100 nm (i.e. nanoparticlesspread out in nowadays life. Silicon or Si, is one of the most abundant chemical elements found on the Earth. Its oxide forms, such as silicate (SiO4) and silicon dioxide, also known as silica (SiO2), are the main constituents of sand and quartz contributing to 90% of the Earth's crust. In this work, three genotoxicity systems "sister chromatid exchange, cytokinesis block micronucleus test and single cell gel electrophoresis (comet) assay" were employed to provide further insight into the cytotoxic and mutagenic/genotoxic potential of SiO2 nanoparticules (particle size 6 nm, 20 nm, 50 nm) in cultured peripheral blood lymphocytes as in vitro. It was observed that there is a significant decrease in Mitotic index (MI), Cytokinesis block proliferation index (CBPI), proliferation index (PRI) values expressed as Cell Kinetic parameters compared with negative control (p < 0.05). There is a statistically significant difference between negative control culture and culture exposed to SiO2 (6 nm, 20 nm, 50 nm) (p < 0.01, p < 0.01, p < 0.05, respectively). It is found that SiO2 nanoparticles at different size (6, 20, 50 nm) progressively increased the SCE frequency and DNA damage on the basis the AU values compared with negative control (p < 0.05). Results showed that the genotoxic/mutagenic and cytotoxic effects of SiO2 nanoparticules is dependent to particule size.

  11. The correlations of the electronic structure and film growth of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on SiO2.

    PubMed

    Lyu, Lu; Niu, Dongmei; Xie, Haipeng; Zhao, Yuan; Cao, Ningtong; Zhang, Hong; Zhang, Yuhe; Liu, Peng; Gao, Yongli

    2017-01-04

    Combining ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and small angle X-ray diffraction (SAXD) measurements, we perform a systematic investigation on the correlations of the electronic structure, film growth and molecular orientation of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO2). AFM analysis reveals a phase transition of disorderedly oriented molecules in clusters in thinner films to highly ordered standing-up molecules in islands in thicker films. SAXD peaks consistently support the standing-up configuration in islands. The increasing ordering of the molecular orientation with film thickness contributes to the changing of the shape and lowering of the leading edge of the highest occupied molecular orbital (HOMO). The end methyl of the highly ordered standing molecules forms an outward pointing dipole layer which makes the work function (WF) decrease with increasing thickness. The downward shift of the HOMO and a decrease of WF result in unconventional downward band bending and decreased ionization potential (IP). The correlations of the orientation ordering of molecules, film growth and interface electronic structures provide a useful design strategy to improve the performance of C8-BTBT thin film based field effect transistors.

  12. Highly Efficient visible-light-induced photoactivity of magnetically retrievable Fe3O4@SiO2@Bi2WO6@g-C3N4 hierarchical microspheres for the degradation of organic pollutant and production of hydrogen

    NASA Astrophysics Data System (ADS)

    Lu, Dingze; Wang, Hongmei; Shen, Qingqing; Kondamareddy, Kiran Kumar; Neena D

    2017-07-01

    The new multifunctional composite Fe3O4@SiO2@Bi2WO6@g-C3N4 (FSBG) hierarchical microspheres with Bi2WO6/g-C3N4 heterostructure as an outer shell and Fe3O4@SiO2 as a magnetic core have been synthesized and characterized for photocatalytic applications. An efficient and adoptable approach of synthesizing magnetic Bi2WO6/g-C3N4 hierarchical microspheres of grape-like morphology is realized. The as-synthesized structures exhibit highly efficient visible-light absorption and separation efficiency of photo-induced charge. The visible-light-induced photocatalytic activity of g-C3N4, Fe3O4@SiO2@Bi2WO6, and FSBG is evaluated by investigating the photodegradation of Rhodamine B (RhB) and hydrogen (H2) out of water. The comparative study reveals that the FSBG microspheres exhibit an optimum visible-light-induced photocatalytic activity in degrading Rhodamin B (RhB), which is 3.06 and 1.92 times to that of g-C3N4 and Fe3O4@SiO2@Bi2WO6 systems respectively and 3.89 and 2.31 times in the production of hydrogen (H2) out of water, respectively. The FSBG composite microspheres also exhibit good magnetic recoverability. An alternate mechanism for the enhanced visible-light photocatalytic activity is given in the present manuscript.

  13. Preparation and Characterization of SnO2-Nanoparticle-Included Ink Solution and Its Application to the Patterned Pt Films on SiO2/Si Substrates.

    PubMed

    Lee, Su Yeon; Lee, Ho Nyun; Kim, Hyun Jong; Lee, Seong Eui; Lee, Hee Chul

    2015-11-01

    Pure SnO2 nanoparticles with a single tetragonal phase were fabricated and characterized for use as ink solution. It was possible to obtain the SnO2 nanoparticles through the calcination process of SnC204 powders prepared by a hydrothermal reaction of an aqueous solution containing SnCl2 x 2H2O and H2C2O4. The SnO2 powder, synthesized at 600 degrees C, showed a single tetragonal phase, while the powders synthesized at 550 degrees C or lower were composed of a mixture of tetragonal and orthorhombic phases. The particle size of the SnO2 powder with single tetragonal phase was as small as 100 nm and its surface specific area was 12.31 m2/g. It was possible to fabricate the SnO2-nanoparticle-included ink solution for nanoparticle printing by adding a small amount of the previously prepared SnO2 powder to an aqueous solution of glycerol. The region of SnO2 nanoparticles formed by dropping the ink solution was able to successfully fill the gaps between Pt electrodes patterned on SiO2/Si substrates; the range of the gap between the electrodes was from 10 to 100 μm.

  14. Laser welding of fused silica glass with sapphire using a non- stoichiometric, fresnoitic Ba2TiSi2O8·3 SiO2 thin film as an absorber

    NASA Astrophysics Data System (ADS)

    de Pablos-Martín, A.; Lorenz, M.; Grundmann, M.; Höche, Th.

    2017-07-01

    Laser welding of dissimilar materials is challenging, due to their difference in coefficients of thermal expansion (CTE). In this work, fused silica-to-sapphire joints were achieved by employment of a ns laser focused in the intermediate Si-enriched fresnoitic glass thin film sealant. The microstructure of the bonded interphase was analyzed down to the nanometer scale and related to the laser parameters used. The crystallization of fresnoite in the glass sealant upon laser process leads to an intense blue emission intensity under UV excitation. This crystallization is favored in the interphase with the silica glass substrate, rather than in the border with the sapphire. The formation of SiO2 particles was confirmed, as well. The bond quality was evaluated by scanning acoustic microscopy (SAM). The substrates remain bonded even after heat treatment at 100 °C for 30 min, despite the large CTE difference between both substrates.

  15. High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators

    NASA Astrophysics Data System (ADS)

    Cheong, Woo-Seok; Yoon, Sung-Min; Hwang, Chi-Sun; Chu, Hye Yong

    2009-04-01

    Using a double-layered gate insulator [SiO2 (100 nm)/Al2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO2 TTFT was 17.4 cm2 s-1 V-1, and that of ZTO TTFT was 50.4 cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ˜106.

  16. In situ measurement of thickness dependence of magnetoresistance and magnetic hysteresis loops of ultrathin Co films on a SiO 2/Si(1 1 1) substrate

    NASA Astrophysics Data System (ADS)

    Li, M.; Wang, G.-C.

    2000-07-01

    Ultrathin Co films ranging from 1 to 19 monolayers (ML) thick were grown by thermal evaporations on native-oxide-covered Si(1 1 1) surfaces in ultrahigh vacuum (UHV). The thickness-dependent magnetoresistance (MR) and thickness-dependent magnetic hysteresis loops were measured in situ by a collinear four-point probe and surface magneto-optical Kerr effect (SMOKE) techniques, respectively. The magnetoresistance of the Co films, measured with the applied magnetic field parallel to the film plane and perpendicular to the current direction, was obtained only when the Co film thickness reached ˜7 ML. The MR increased monotonically from ˜0.01% at ˜7 ML to ˜0.11% at ˜19 ML. The onset of measurable magnetic hysteresis loops from the Co film occurred at ˜3 ML, earlier than the onset thickness ˜7 ML for measurable MR. The coercivity Hc of the Co film decreased with the film thickness d in the range of 3-19 ML and followed a power law Hc∝ d- n with n=0.33±0.05. The MR change was attributed to scattering from domain walls. The coercivity decrease as a function of thickness was attributed to the decrease of surface domain-wall pinning.

  17. Memory effect in the thin-film structure metal-Ba(0.5)Sr(0.5)Nb2O6-SiO2-Si

    NASA Astrophysics Data System (ADS)

    Baginskii, I. L.; Kostsov, E. G.

    1988-08-01

    A study is made of the memory effect in metal-ferroelectric-semiconductor structures based on textured barium strontium niobate (BSN) films produced on silicon substrates by the HF spraying method. It is found that BSN thin films on silicon have ferroelectric properties. It is also found that the memory effect in these structures is associated with ferroelectric polarization processes in the BSN film rather than space charge accumulation, despite the fact that the volt-farad characteristics exhibit hysteresis of the injection type.

  18. Study of catalytic properties of sol-gel-derived CoO x -SiO2 film systems by the example of the growth of carbon nanomaterials

    NASA Astrophysics Data System (ADS)

    Levitskii, V. S.; Maksimov, A. I.; Moshnikov, V. A.; Terukov, E. I.

    2014-07-01

    Film catalytic samples in the Si-Co-O system in the composition range from 15 to 90 mol % Co have been prepared using the sol-gel technology. Carbon nanomaterials have been fabricated by pyrolytic synthesis using these films as catalysts. Raman spectroscopy of materials has shown that multiwalled carbon nanotubes are formed by pyrolysis on catalytic films containing Co3O4. The dependence of the carbon material length on the synthesis time has been considered. It has been shown that the average growth rate of tubes and fibers is ˜3 μm/min.

  19. Residual stress in Ta2O5-SiO2 composite thin-film rugate filters prepared by radio frequency ion-beam sputtering.

    PubMed

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Ta-Si oxide composite thin-film rugate filters were prepared by radio frequency ion-beam sputtering and their residual stress and substrate deflections were measured. The residual stress and substrate deflection of these composite film rugate filters were less than that of notch filters made from a series of discrete quarter-wave layers with alternate high and low indices because of the smooth modulation of composition and no interface structure of the rugate filter.

  20. Magnetic anisotropy in multilayer nanogranular films (Co40Fe40B20)50(SiO2)50/α-Si:H

    NASA Astrophysics Data System (ADS)

    Denisova, E. A.; Komogortsev, S. V.; Iskhakov, R. S.; Chekanova, L. A.; Balaev, A. D.; Kalinin, Yu. E.; Sitnikov, A. V.

    2017-10-01

    Macroscopic and local magnetic anisotropy of [CoFeB-SiO2/α-Si:H]60 multilayer films was studied in comparison with that for the thick CoFeB-SiO2 granular films. The volume fraction of magnetic component Co40Fe40B20 is ranged from 0.34 to 0.70. In the multilayer films the magnetic layer and silicon spacer thicknesses are 2.5÷4.5 nm and 3.5 nm correspondingly. The magnetization curves and ferromagnetic resonance measurements were used to determining magnetic anisotropy energy constants. The main contribution to the local magnetic anisotropy energy constant is found to be from surface magnetic anisotropy of magnetic granules. It is found that the magnetic percolation point of multilayer films (XC 40) is shifted in comparison with that in granular films (XC 30). Surface magnetic anisotropy energy constants of multilayer films with different X evaluated from the surface modes of spin-wave resonance are in the range 0.5

  1. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    PubMed Central

    2011-01-01

    Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS) memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices. PMID:21711708

  2. Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Chen, Ningli; Lin, Guangyang; Zhang, Lu; Li, Cheng; Chen, Songyan; Huang, Wei; Xu, Jianfang; Wang, Jianyuan

    2017-05-01

    A simple method to form GeSn nanocrystallite thin films with high Sn composition at low temperature by sputtering Ge on self-assembled Sn nanodots is proposed. During the sputtering process, Ge atoms diffuse into Sn nanodots and then nanocrystalline GeSn freezes out as temperature is above 150 °C. GeSn nanocrystallite thin films with high Sn composition of 27.3% are achieved at 150 °C and Sn composition decreases gradually with elevation of temperature. The hole mobility of the GeSn nanocrystallite thin film of 14.0 cm2·V-1·s-1 is achieved with the process temperature of less than 275 °C, which is suitable for flexible electronics.

  3. Growth and structure of water on SiO2 films on Si investigated byKelvin probe microscopy and in situ X-ray Spectroscopies

    SciTech Connect

    Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H.; Salmeron, M.

    2007-06-14

    The growth of water on thin SiO{sub 2} films on Si wafers at vapor pressures between 1.5 and 4 torr and temperatures between -10 and 21 C has been studied in situ using Kelvin Probe Microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH) water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near 100%. The O K-edge near-edge X-ray absorption spectrum around 75% RH is similar to that of liquid water (imperfect H-bonding coordination) at temperatures above 0 C and ice-like below 0 C.

  4. Characterization of phospholipid bilayer formation on a thin film of porous SiO2 by reflective interferometric Fourier transform spectroscopy (RIFTS).

    PubMed

    Pace, Stéphanie; Seantier, Bastien; Belamie, Emmanuel; Lautrédou, Nicole; Sailor, Michael J; Milhiet, Pierre-Emmanuel; Cunin, Frédérique

    2012-05-01

    Classical methods for characterizing supported artificial phospholipid bilayers include imaging techniques such as atomic force microscopy and fluorescence microscopy. The use in the past decade of surface-sensitive methods such as surface plasmon resonance and ellipsometry, and acoustic sensors such as the quartz crystal microbalance, coupled to the imaging methods, have expanded our understanding of the formation mechanisms of phospholipid bilayers. In the present work, reflective interferometric Fourier transform spectrocopy (RIFTS) is employed to monitor the formation of a planar phospholipid bilayer on an oxidized mesoporous Si (pSiO(2)) thin film. The pSiO(2) substrates are prepared as thin films (3 μm thick) with pore dimensions of a few nanometers in diameter by the electrochemical etching of crystalline silicon, and they are passivated with a thin thermal oxide layer. A thin film of mica is used as a control. Interferometric optical measurements are used to quantify the behavior of the phospholipids at the internal (pores) and external surfaces of the substrates. The optical measurements indicate that vesicles initially adsorb to the pSiO(2) surface as a monolayer, followed by vesicle fusion and conversion to a surface-adsorbed lipid bilayer. The timescale of the process is consistent with prior measurements of vesicle fusion onto mica surfaces. Reflectance spectra calculated using a simple double-layer Fabry-Perot interference model verify the experimental results. The method provides a simple, real-time, nondestructive approach to characterizing the growth and evolution of lipid vesicle layers on the surface of an optical thin film.

  5. Visible light-induced hole injection into rectifying molecular wires anchored on Co3O4 and SiO2 nanoparticles.

    PubMed

    Soo, Han Sen; Agiral, Anil; Bachmeier, Andreas; Frei, Heinz

    2012-10-17

    Tight control of charge transport from a visible light sensitizer to a metal oxide nanoparticle catalyst for water oxidation is a critical requirement for developing efficient artificial photosynthetic systems. By utilizing covalently anchored molecular wires for hole transport from sensitizer to the oxide surface, the challenge of high rate and unidirectionality of the charge flow can be addressed. Functionalized hole conducting molecular wires of type p-oligo(phenylenevinylene) (3 aryl units, abbreviated PV3) with various anchoring groups for the covalent attachment to Co(3)O(4) catalyst nanoparticles were synthesized and two alternative methods for attachment to the oxide nanoparticle surface introduced. Covalent anchoring of intact PV3 molecules on Co(3)O(4) nanoparticles (and on SiO(2) nanoparticles for control purposes) was established by FT-Raman, FT-IR, and optical spectroscopy including observation, in some cases, of the vibrational signature of the anchored functionality. Direct monitoring of the kinetics of hole transfer from a visible light sensitizer in aqueous solution ([Ru(bpy)(3)](2+) (and derivatives) light absorber, [Co(NH(3))(5)Cl](2+) acceptor) to wire molecules on inert SiO(2)(12 nm) particles by nanosecond laser absorption spectroscopy revealed efficient, encounter controlled rates. For wire molecules anchored on Co(3)O(4) nanoparticles, the recovery of the reduced sensitizer at 470 nm indicated similarly efficient hole transfer to the attached PV3, yet no transient hole signal was detected at 600 nm. This implies hole injection from the anchored wire molecule into the Co(3)O(4) particle within 1 μs or shorter, indicating efficient charge transport from the visible light sensitizer to the oxide catalyst particle.

  6. 3D micro- and nano-machining of hydrogenated amorphous silicon films on SiO2/Si and glass substrates

    NASA Astrophysics Data System (ADS)

    Soleimani-Amiri, S.; Zanganeh, S.; Ramzani, R.; Talei, R.; Mohajerzadeh, S.; Azimi, S.; Sanaee, Z.

    2015-07-01

    We report on the hydrogen-assisted deep reactive ion etching of hydrogenated amorphous silicon (a-Si:H) films deposited using radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). High aspect-ratio vertical and 3D amorphous silicon features, with the desired control over the shaping of the sidewalls, in micro and nano scales, were fabricated in ordered arrays. The suitable adhesion of amorphous Si film to the underlayer allows one to apply deep micro- and nano-machining to these layers. By means of a second deposition of amorphous silicon on highly curved 3D structures and subsequent etching, the fabrication of amorphous silicon rings is feasible. In addition to photolithography, nanosphere colloidal lithography and electron beam lithography were exploited to realize ultra-small features of amorphous silicon. We have also investigated the optical properties of fabricated hexagonally patterned a-Si nanowire arrays on glass substrates and demonstrated their high potential as active layers for solar cells. This etching process presents an inexpensive method for the formation of highly featured arrays of vertical and 3D amorphous silicon rods on both glass and silicon substrates, suitable for large-area applications.

  7. Investigation of the structure and composition of film sol-gel-derived CoO x -SiO2 systems

    NASA Astrophysics Data System (ADS)

    Levitskii, V. S.; Maksimov, A. I.; Moshnikov, V. A.; Terukov, E. I.

    2014-02-01

    Samples of Si-Co-O ranging in composition from 15 to 90% of cobalt content have been synthesized by the sol-gel technology. The results of atomic force microscopy have demonstrated that the preliminary centrifugation of the solutions makes it possible to control the size of the nanospheres obtained in the stage of sol formation. For diagnostics of the phase composition of the film and bulk materials, Raman spectroscopy and X-ray powder diffraction analysis have been used. The results of X-ray powder diffraction analysis and Raman spectroscopy have revealed that the nanospheres belong to the Co3O4 spinel phase. It has been found that there is a correlation between the positions of the Raman band maxima and the nanosphere size.

  8. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  9. Shear strength of metal - SiO2 contacts

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1978-01-01

    The strength of the bond between metals and SiO2 was studied by measuring the static coefficient of friction of metals contacting alpha-quartz in ultrahigh vacuum. It was found that copper with either chemisorbed oxygen, nitrogen, or sulphur exhibited higher contact strength on stoichiometric SiO2 than did clean copper. Since the surface density of states induced by these species on copper is similar, it appears that the strength of the interfacial bond can be related to the density of states on the metal surface.

  10. Fabrication of noble-metal nanoparticle-doped SiO2-B2O3-P2O5 waveguide films

    NASA Astrophysics Data System (ADS)

    Lee, Hunhyeong; Kang, Minkyung; Nichols, William T.; Shin, Dongwook

    2012-05-01

    In this article, we report the fabrication and the characterization of Pt/SiO2-B2O3-P2O5 and Au/SiO2-B2O3-P2O5 composite thin films suitable for planar lightwave circuits (PLCs). The host material was prepared by using flame hydrolysis deposition (FHD). Platinum was doped from colloidal solutions with concentrations of 500, 1000, and 2000 ppm. Gold was doped by sputtering with various deposition times. The samples displayed absorption peaks originating from the surface plasmon resonance (SPR) of the dopant metal particles. With increasing dopant particle size, the absorption peak shifted toward longer wavelength, and the full width at half maximum (FWHM) of the absorption band broadened. The Maxwell-Garnett theory was used to explain the size dependence of the plasmon peaks. The dopant metal particles were found to order as a monolayer within the silica matrix, opening the possibility for surface-plasmon-resonance-based waveguiding in optical devices.

  11. Simultaneous electroanalytical determination of hydroquinone and catechol in the presence of resorcinol at an SiO2/C electrode spin-coated with a thin film of Nb2O5.

    PubMed

    Canevari, Thiago C; Arenas, Leliz T; Landers, Richard; Custodio, Rogério; Gushikem, Yoshitaka

    2013-01-07

    This paper describes the development, characterization and application of an Nb(2)O(5) film formed on the surface of a carbon ceramic material, SiO(2)/C, obtained by a sol-gel method, using the spin-coating technique. The working electrode using this material will be designated as SiCNb. Hydroquinone and catechol can be oxidized at this electrode in the presence of resorcinol, allowing their simultaneous detection. The electrochemical properties of the resulting electrode were investigated using cyclic and differential pulse voltammetry techniques. Well-defined and separated oxidation peaks were observed by differential pulse voltammetry in Tris-HCl buffer solution at pH 7 containing 1 mol L(-1) KCl in the supporting electrolyte solution. The SiCNb electrode exhibited high sensitivity in the simultaneous determination of hydroquinone and catechol in the presence of resorcinol, with the limits of detection for hydroquinone and catechol being 1.6 μmol L(-1) and 0.8 μmol L(-1), respectively. Theoretical calculations were performed to determine the ionization energies of hydroquinone, catechol and resorcinol; the results were used to explain the simultaneous determination of species by differential pulse voltammetry. The presence of resorcinol did not produce any interference in the simultaneous detection of hydroquinone and catechol on the surface of the modified electrode.

  12. Effect of surface wettability properties on the electrical properties of printed carbon nanotube thin-film transistors on SiO2/Si substrates.

    PubMed

    Liu, Zhen; Zhao, Jianwen; Xu, Wenya; Qian, Long; Nie, Shuhong; Cui, Zheng

    2014-07-09

    The precise placement and efficient deposition of semiconducting single-walled carbon nanotubes (sc-SWCNTs) on substrates are challenges for achieving printed high-performance SWCNT thin-film transistors (TFTs) with independent gates. It was found that the wettability of the substrate played a key role in the electrical properties of TFTs for sc-SWCNTs sorted by poly[(9,9-dioctylfluorene-2,7-diyl)-co-(1,4-benzo-2,1,3-thiadiazole)] (PFO-BT). In the present work we report a simple and scalable method which can rapidly and selectively deposit a high concentration of sc-SWCNTs in TFT channels by aerosol-jet-printing. The method is based on oxygen plasma treatment of substrates, which tunes the surface wettability. TFTs printed on the treated substrates demonstrated a low operation voltage, small hysteresis, high mobility up to 32.3 cm(2) V(-1) s(-1), and high on/off ratio up to 10(6) after only two printings. Their mobilities were 10 and 30 times higher than those of TFTs fabricated on untreated and low-wettability substrates. The uniformity of printed TFTs was also greatly improved. Inverters were constructed by printed top-gate TFTs, and a maximum voltage gain of 17 at Vdd = 5 V was achieved. The mechanism of such improvements is that the PFO-BT-functionalized sc-SWCNTs are preferably immobilized on the oxygen plasma treated substrates due to the strong hydrogen bonds between sc-SWCNTs and hydroxyl groups on the substrates.

  13. Semiconducting electronic property of graphene adsorbed on (0001) surfaces of SiO2.

    PubMed

    Nguyen, Thanh Cuong; Otani, Minoru; Okada, Susumu

    2011-03-11

    First-principles total energy calculations are performed to investigate the energetics and electronic structures of graphene adsorbed on both an oxygen-terminated SiO2 (0001) surface and a fully hydroxylated SiO2 (0001) surface. We find that there are several stable adsorption sites for graphene on both O-terminated and hydroxylated SiO2 surfaces. The binding energy in the most stable geometry is found to be 15 meV per C atom, indicating a weak interaction between graphene and SiO2 (0001) surfaces. We also find that the graphene adsorbed on SiO2 is a semiconductor irrespective of the adsorption arrangement due to the variation of on-site energy induced by the SiO2 substrate.

  14. Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

    2017-03-01

    The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

  15. Crack suppression of silica glass formed by zoned F2 laser-induced photochemical surface modification of hard silicone thin film coating on polycarbonate

    NASA Astrophysics Data System (ADS)

    Nojiri, Hidetoshi; Okoshi, Masayuki

    2016-12-01

    The surface layer of a hard silicone thin film coating on polycarbonate was modified to silica glass (SiO2) through F2-laser-induced photochemical reactions. To obtain samples with higher abrasion resistances, SiO2 films of 1 µm thickness and over were successfully formed without cracking, by zoning the laser-irradiated area of micrometer order. With the conversion of silicone to SiO2, the volumetric shrinkage of the sample was induced, which simply depended on the number of photons, by varying the single-pulse fluence and irradiation time of a F2 laser. The ratio of volumetric shrinkage to the original silicone was estimated to be approximately 0.85, generating tensile stress in SiO2. The stress could be suppressed to be lower than 48 MPa for typical SiO2 by reducing the laser-irradiated area to be of micrometer order. Also, when the length of one side of the irradiated area is 1 mm, the thickness of the SiO2 film is expected to increase to approximately 5 µm.

  16. Competing liquid phase instabilities during pulsed laser induced self-assembly of copper rings into ordered nanoparticle arrays on SiO2

    SciTech Connect

    Wu, Yeuyeng; Fowlkes, Jason Davidson; Kondic, Lou; Diez, Javier A; Gonzalez, Alejandro; Roberts, Nicholas A

    2011-01-01

    Nanoscale copper rings of different radii, thicknesses, and widths were synthesized on silicon dioxide thin films and were subsequently liquefied via a nanosecond pulse laser treatment. During the nanoscale liquid lifetimes, the rings experience competing retraction dynamics and thin film and/or Rayleigh-Plateau types of instabilities, which lead to arrays of ordered nanodroplets. Surprisingly, the results are significantly different from those of similar experiments carried out on a Si surface.(1) We use hydrodynamic simulations to elucidate how the different liquid/solid interactions control the different instability mechanisms in the present problem.

  17. Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4

    NASA Astrophysics Data System (ADS)

    Cosentino, Salvatore; Sungur Ozen, Emel; Raciti, Rosario; Mio, Antonio M.; Nicotra, Giuseppe; Simone, Francesca; Crupi, Isodiana; Turan, Rasit; Terrasi, Antonio; Aydinli, Atilla; Mirabella, Salvo

    2014-01-01

    Germanium quantum dots (QDs) embedded in SiO2 or in Si3N4 have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850 °C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2 matrix, or in the 1-2 nm range in the Si3N4 matrix, as measured by transmission electron microscopy. Thus, Si3N4 matrix hosts Ge QDs at higher density and more closely spaced than SiO2 matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si3N4 matrix in comparison with those in the SiO2 host. Light absorption by Ge QDs is shown to be more effective in Si3N4 matrix, due to the optical bandgap (0.9-1.6 eV) being lower than in SiO2 matrix (1.2-2.2 eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si3N4 matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  18. SAW-grade SiO2 for advanced microfluidic devices

    NASA Astrophysics Data System (ADS)

    Winkler, Andreas; Menzel, Siegfried; Schmidt, Hagen

    2009-05-01

    Acoustoelectronic devices based on surface acoustic wave (SAW) technology are primarily used in radio frequency filters, delay lines, duplexers, amplifiers and RFID tags. Thereby, SAW's are excited at the surface of piezoelectric materials (e.g. Quartz, LiTaO3, LiNbO3) by an RF signal applied via interdigital transducers (IDTs)1. Novel SAW applications that emerged recently in the field of microfluidics such as the handling of minimum quantities of fluids or gases2,3 require a fluid compatible design approach, high power durability and long lifetime of the devices. However, conventional SAW devices with finger electrodes arranged on top of the chip surface experience acoustomigration damage4,5 at high power input and/or higher operating temperature leading to failure of the device. Additionally, inappropriate material systems or chip surface topography can limit their performance in microfluidic application. To overcome these limitations the electrodes can be buried in an acoustically suited ("SAW-grade") functional layer which moreover should be adjustable to the specific biotechnological task. Depending on the properties of this layer, it can suppress the acoustomigration impact6 and improve the power durability of the device. Also, a reduction of the thermally-induced frequency shift is possible7. The present paper describes a novel SAW based chip technology approach using a modular concept. Here, the electrodes are buried in surface polished SAW-grade SiO2 fabricated by means of reactive RF magnetron sputtering from a SiO2- target. This approach will be demonstrated for two different metallization systems based on Al or Cu thin films on 128° YX-LiNbO3 substrates. We also show the application of the SiO2-layer with respect to compensation of thermallyinduced frequency shift and bio /chemical surface modification. Investigations were carried out using atomic force microscopy, laser-pulse acoustic measurement, glow-discharge optical emission spectroscopy

  19. Suppressing Structural Colors of Photocatalytic Optical Coatings on Glass: The Critical Role of SiO2.

    PubMed

    Li, Ronghua; Boudot, Mickael; Boissière, Cédric; Grosso, David; Faustini, Marco

    2017-04-26

    The appearance of structural colors on coated-glass is a critical esthetical drawback toward industrialization of photocatalytic coatings on windows for architecture or automobile. Herein we describe a rational approach to suppress the structural color of mesoporous TiO2-based coatings preserving photoactivity and mechanical stiffness. Addition of SiO2 as third component is discussed. TixSi(1-x)O2 mesoporous coatings were fabricated by one-step liquid deposition process through the evaporation induced self-assembling and characterized by GI-SAXS, GI-WAXS, electron microscopies, and in situ Environmental Ellipsometry Porosimetry. Guided by optical simulation, we investigated the critical role of SiO2 on the optical responses of the films but also on the structural, mechanical, and photocatalytic properties, important requirements to go toward real applications. We demonstrate that adding SiO2 to porous TiO2 allows tuning and suppression of structural colors through refractive index matching and up to 160% increase in mechanical stiffening of the films. This study leads us to demonstrate an example of "invisible" coating, in which the light reflection is angle- and thickness-independent, and exhibiting high porosity, mechanical stiffness, and photoactivity.

  20. Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

    NASA Astrophysics Data System (ADS)

    Lutsev, L. V.; Pavlov, V. V.; Usachev, P. A.; Astretsov, A. A.; Stognij, A. I.; Novitskii, N. N.

    2012-12-01

    Negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in the avalanche regime. Light with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap. This suppresses the avalanche feedback and causes a reduction of the current flowing through the SiO2(Co)/GaAs heterostructure.

  1. Molecular dynamics simulation of amorphous SiO2 nanoparticles.

    PubMed

    Hoang, Vo Van

    2007-11-08

    Molecular dynamics simulation of amorphous SiO2 spherical nanoparticles has been carried out in a model with different sizes, 2, 4, and 6 nm, under non-periodic boundary conditions. We use the pair interatomic potentials which have weak Coulomb interaction and Morse type short-range interaction. Models have been obtained by cooling from the melt via molecular dynamics (MD) simulation. Structural properties of amorphous nanoparticles obtained at 350 K have been studied via partial radial distribution functions (PRDFs), mean interatomic distances, coordination numbers, and bond-angle distributions, which are compared with those observed in the bulk. Calculations of the radial density profile in nanoparticles show the tendency of oxygen to concentrate at the surface as observed previously in other amorphous clusters or thin films. Size effects on structure of nanosized models are significant. The calculations show that if the size is larger than 4 nm, amorphous SiO2 nanoparticles have a distorted tetrahedral network structure with the mean coordination number ZSi-O approximately 4.0 and ZO-Si approximately 2.0 like those observed in the bulk. Surface structure, surface energy, and glass transition temperature of SiO2 nanoparticles have been obtained and presented.

  2. Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

    NASA Astrophysics Data System (ADS)

    Ando, Takashi; Copel, Matt; Bruley, John; Frank, Martin M.; Watanabe, Heiji; Narayanan, Vijay

    2010-03-01

    We demonstrate metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric and clarify the kinetics underlying this process. The intrinsic IL scaling effect on electron mobility is separated from La and Al-induced dipole effects. We find that the mobility degradation for La-containing high-κ dielectrics is not due to the La-induced dipole but due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation. This unique nature of the La-induced dipole enables aggressive equivalent oxide thickness scaling down to 0.42 nm without extrinsic mobility degradation when combined with IL scaling.

  3. Fabrication of SiO2/c-Si/SiO2 Double Barrier Structure Using Lateral Solid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Sinkkonen, J.

    Formation of an ultra-thin-film silicon-on-insulator structure by lateral solid state epitaxy (LSPE) of amorphous Si on SiO2 has been investigated. The LSPE growth length was found. The SiO2/Si/SiO2 double barrier structure with single crystalline silicon well has been grown.

  4. Nonlithographic SiO2 Nanodot Arrays via Template Synthesis Approach

    NASA Astrophysics Data System (ADS)

    Cha, Young Kwan; Seo, David; Yoo, In K.; Park, Sangjin; Jeong, Soo-Hwan; Chung, Chee Won

    2004-08-01

    We present a method for fabricating SiO2 nanodot arrays through pattern transfer of self-organized tantalum oxide hard masks on to a Si wafer. Tantalum oxide nanopillar arrays are formed at the bottom of anodic aluminum oxide by electrochemical anodization of the Al/Ta films on a Si wafer. Then the tantalum oxide nanopillars were used as hard masks for formation of SiO2 nanostructures. Ion milling was used for the pattern transfer. The density and diameter of the SiO2 nanodot arrays could be controlled by varing the anodizing conditions. The average diameters and areal density of prepared SiO2 nanodisks were 68 nm and 1010/cm2, respectively. Through this approach, it is expected that a wide variety of nanodisk arrays over large areas can be prepared.

  5. Content of steroid hormones in the blood and adrenal glands of mice in the dynamics of BCG- and SiO2-induced granulomatous inflammation.

    PubMed

    Palchikova, N A; Kuzminova, O I; Utkina, N V; Selyatitskaya, V G; Shkurupiy, V A

    2008-12-01

    Individual or combined administration of BCG vaccine and silicon dioxide to male mice induced a nonspecific stress response of the adrenal glands and gonads judging from changes in the concentration of blood cortisol and testosterone. The dynamics of cortisol concentration in the adrenal glands was similar, while changes in progesterone concentration were in antiphase to those in the blood. After combined administration of both inductors of granulomatous inflammation, changes in the concentrations of the studied hormones to a greater extent corresponded to their dynamics after injection of BCG.

  6. In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

    DOE PAGES

    Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; ...

    2015-12-17

    Real-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E=0.5 MeV/amu), scintillation materials of a-SiO2, crystalline quartz, and Al2O3 are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offersmore » higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. Lastly, the usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.« less

  7. Light Induced Water Oxidation on Cobalt-Phosphate (Co-Pi) Catalyst Modified Semi-Transparent, Porous SiO2-BiVO4 Electrodes

    SciTech Connect

    Pilli, S. K.; Deutsch, T. G.; Furtak, T. E.; Turner, J. A.; Brown, L. D.; Herring, A. M.

    2012-04-21

    A facile and simple procedure for the synthesis of semi-transparent and porous SiO{sub 2}-BiVO{sub 4} electrodes is reported. The method involves a surfactant assisted metal-organic decomposition at 500 C. An earth abundant oxygen evolution catalyst (OEC), cobalt phosphate (Co-Pi), has been used to modify the SiO{sub 2}-BiVO{sub 4} electrode by electrodeposition (ED) and photoassisted electrodeposition (PED) methods. Modified electrodes by these two methods have been examined for light induced water oxidation and compared to the unmodified SiO{sub 2}-BiVO{sub 4} electrodes by various photoelectrochemical techniques. The PED method was a more effective method of OEC preparation than the ED method as evidenced by an increased photocurrent magnitude during photocurrent-potential (I-V) characterizations. Electrode surfaces catalyzed by PED exhibited a very large cathodic shift (420 mV) in the onset potential for water oxidation. The chopped-light I-V measurements performed at different intervals over 24-hour extended testing under illumination and applied bias conditions show a fair photostability for PED Co-Pi modified SiO{sub 2}-BiVO{sub 4}.

  8. Shock induced reaction in Chicxulub target materials (CaSO4 and SiO2) and their relation to extinctions

    NASA Astrophysics Data System (ADS)

    Chen, Guangqing; Ahrens, Thomas J.

    1993-03-01

    The global platinum element rich layer, the presence of shocked quartz grains (in some cases with stishovite), and the observation of a tektite-rich layer, precisely at the K-T boundary, are the three major arguments for the extinction bolide impact hypothesis of Alvarez et al. Tektites (spherules) from Beloc in Haiti and Mimbral in Mexico received particular interest because of their geological proximity to the Chicxulub impact structure, which is a leading candidate for at least one of the K-T impact craters. Although in most localities the original glass has weathered to clay minerals, some shock-induced glass is found in outcrops and drill cores which is used for Ar-38/Ar-39 dating. The glassy tektites were found to be chemically similar and coeval at 65.0 Ma with Chicxulub melt rock. Two kinds of K-T spherules were discovered: (1) a silic black glass; and (2) a yellow glass, enriched in Ca, Mg, and S. The high sulfur content of the glass and the abundance of anhydrite (CaSO4) in the carbonate-evaporite sequence observed in Drill Holes Y-1 and Y-2 at Chicxulub prompted studies of calcium sulfate devolatization. Further discussion of our experiments is presented.

  9. Shock induced reaction in Chicxulub target materials (CaSO4 and SiO2) and their relation to extinctions

    NASA Technical Reports Server (NTRS)

    Chen, Guangqing; Ahrens, Thomas J.

    1993-01-01

    The global platinum element rich layer, the presence of shocked quartz grains (in some cases with stishovite), and the observation of a tektite-rich layer, precisely at the K-T boundary, are the three major arguments for the extinction bolide impact hypothesis of Alvarez et al. Tektites (spherules) from Beloc in Haiti and Mimbral in Mexico received particular interest because of their geological proximity to the Chicxulub impact structure, which is a leading candidate for at least one of the K-T impact craters. Although in most localities the original glass has weathered to clay minerals, some shock-induced glass is found in outcrops and drill cores which is used for Ar-38/Ar-39 dating. The glassy tektites were found to be chemically similar and coeval at 65.0 Ma with Chicxulub melt rock. Two kinds of K-T spherules were discovered: (1) a silic black glass; and (2) a yellow glass, enriched in Ca, Mg, and S. The high sulfur content of the glass and the abundance of anhydrite (CaSO4) in the carbonate-evaporite sequence observed in Drill Holes Y-1 and Y-2 at Chicxulub prompted studies of calcium sulfate devolatization. Further discussion of our experiments is presented.

  10. Hard-Mask-Through UV-Light-Induced Damage to Low-k Film during Plasma Process for Dual Damascene

    NASA Astrophysics Data System (ADS)

    Noriaki Matsunaga,; Hirokatsu Okumura,; Butsurin Jinnai,; Seiji Samukawa,

    2010-04-01

    Plasma irradiation impact on a SiO2-hardmask/SiOCH low-k film stacked structure was investigated in detail. The plasma irradiation induces damage to the low-k film although it is covered by a hard mask. The hard-mask-through UV-light-induced damage showed plasma source gas dependence. The damage is determined by the UV light wavelength and photon energy. It was also found that a high substrate temperature accelerates the hard-mask-through UV-light-induced damage. The hard-mask-through UV-light-induced damage was hardly seen for the hard masks thicker than 115 nm in the O2-irradiation experiment. Conversely, an actual SiO2 film deposition process by plasma-enhanced chemical vapor deposition (PE-CVD) induces damage during deposition. The PE-CVD process induces heavier damage to the low-k film than the O2-plasma experiment. Higher process temperature accelerates the hard-mask-through UV-light-induced damage in the hard mask SiO2 deposition process.

  11. Thermal Investigation of SiO2-Bi2O3 Heavy Metal Glasses

    NASA Astrophysics Data System (ADS)

    Simon, V.; Todea, M.; Simon, S.

    Structural changes induced by temperature rising in binary silico-bismuthate glasses are investigated by differential thermal analysis. Several exothermic peaks are recorded for all samples. Progressive substitution of Bi2O3 by SiO2 contributes to the structural relaxation of vitreous network and leads to diminishing of the melting temperature, even as SiO2 content reaches 40 mol%. Glass stability is enhanced by addition of silicon dioxide.

  12. Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti /SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Parui, Jayanta; Krupanidhi, S. B.

    2006-08-01

    Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt /Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ˜ 17°C per 1mol% of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193kV/cm at 80°C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2mol% La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

  13. Interaction of tetraethoxysilane with OH-terminated SiO2 (0 0 1) surface: A first principles study

    NASA Astrophysics Data System (ADS)

    Deng, Xiaodi; Song, Yixu; Li, Jinchun; Pu, Yikang

    2014-06-01

    First principles calculates have been performed to investigate the surface reaction mechanism of tetraethoxysilane (TEOS) with fully hydroxylated SiO2(0 0 1) substrate. In semiconductor industry, this is the key step to understand and control the SiO2 film growth in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. During the calculation, we proposed a model which breaks the surface dissociative chemisorption into two steps and we calculated the activation barriers and thermochemical energies for each step. Our calculation result for step one shows that the first half reaction is thermodynamically favorable. For the second half reaction, we systematically studied the two potential reaction pathways. The comparing result indicates that the pathway which is more energetically favorable will lead to formation of crystalline SiO2 films while the other will lead to formation of disordered SiO2 films.

  14. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    PubMed

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CFx) film deposition and Ar plasma activation of the CFx film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CFx deposition half-cycle from a C4F8/Ar plasma show that an atomically thin mixing layer is formed between the deposited CFx layer and the underlying SiO2 film. Etching during the Ar plasma cycle is activated by Ar(+) bombardment of the CFx layer, which results in the simultaneous removal of surface CFx and the underlying SiO2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CFx deposition, which combined with an ultrathin CFx layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CFx film, ∼3-4 Å of SiO2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CFx layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CFx on reactor walls leads to a gradual increase in the etch per cycle.

  15. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  16. Magnetoelectric coupling in Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3 thin films deposited on Pt/TiO2/SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Cibert, C.; Zhu, J.; Poullain, G.; Bouregba, R.; More-Chevalier, J.; Pautrat, A.

    2013-01-01

    Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3 (Terfenol-D/Pt/PZT) thin films were sputtered on Pt/TiO2/SiO2/Si substrate. PZT and Terfenol-D layers were chosen for their large piezoelectric and magnetostrictive coefficients, respectively. 4%-5% magnetocapacitance has been measured on a Terfenol-D/Pt/PZT stack at room temperature. A magnetoelectric (ME) voltage coefficient of 150 mV/cm Oe was obtained at low dc magnetic field out of mechanical resonance. This work demonstrates the possibility to achieve ME effect in integrated devices involving Terfenol-D and PZT thin films providing that the diffusion, which may occur between both active layers is reduced using an intermediate layer.

  17. Laser-induced chemical vapour deposition of conductive and insulating thin films

    NASA Astrophysics Data System (ADS)

    Reisse, G.; Gaensicke, F.; Ebert, R.; Illmann, U.; Johansen, H.

    1992-01-01

    Investigations concerning the laser-induced chemical vapour deposition of Mo, W, Co and TiSi 2 conductive thin film structures from Mo(CO) 6, W(CO) 6, Co 2(CO) 8, TiCl 4 and SiH 4 using a direct writing method are presented. SiO 2 thin films were deposited from SiH 4 and N 2O in a large area deposition process stimulated by an excimer laser by using a parallel beam configuration.

  18. Magnetic antidot arrays using SiO2 filled diblock copolymer micelles as ion etching mask

    NASA Astrophysics Data System (ADS)

    Pütter, S.; Stillrich, H.; Frömsdorf, A.; Menk, C.; Frömter, R.; Förster, S.; Oepen, H. P.

    2007-09-01

    We present a simple method for the production of magnetic antidot arrays utilizing polystyrene-poly-2-vinylpyridine micelles filled with amorphous SiO2. By dip coating, a micellar monolayer is deposited onto Co/Pt multilayers. A hexagonal pattern with periodicity of 80 nm is obtained. By Ar+ ion etching the micelle layer is transformed into an antidot array due to preferred sputtering of the SiO2 core. Further ion bombardment transfers the pattern into the magnetic film and leads to a reorientation of the perpendicular to in-plane easy axis which is attributed to intermixing of the Co/Pt multilayers.

  19. Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas

    NASA Astrophysics Data System (ADS)

    Li, Xi; Ling, Li; Hua, Xuefeng; Fukasawa, Masanaga; Oehrlein, Gottlieb S.; Barela, Marcos; Anderson, Harold M.

    2003-01-01

    etching of SiO2 and Si. We also measured fluorocarbon deposition rates without rf bias and etching rates of blanket SiO2, silicon, resist and deposited fluorocarbon films as a function of the rf bias and feed gas composition. Important differences in the response of the etching rates of those materials upon the addition of O2 and Ar to C4F8 were observed. In particular, we show that the SiO2/Si and SiO2/resist etching selectivities can be doubled by adding up to 90% Ar to C4F8, without inducing an unacceptably large reduction of the SiO2 etching rate. The change in etch rate ratios is at least in part due to strong surface chemical changes seen for Ar-rich fluorocarbon gas mixtures. The surface chemical changes of Si and SiO2 surfaces were investigated by real-time ellipsometry and x-ray photoelectron spectroscopy. A strong reduction of the fluorine content of the fluorocarbon steady-state layer and an increase in thickness is seen when up to 90% Ar was added to C4F8, and this coincides with an increase of the SiO2/Si etching selectivity. The change in fluorocarbon surface chemistry can be explained by the strongly increased ion/neutral flux ratio that is characteristic of Ar-rich C4F8/Ar gas mixtures.

  20. Optical properties of self-assembled TiO2-SiO2 double-layered photonic crystals.

    PubMed

    Oh, Yong Taeg; Koo, Bo Ra; Shin, Dong Chan

    2013-01-01

    The optical properties of self-assembled TiO2/SiO2 double-layered photonic crystals were examined using SiO2 and TiO2 nanopowders. The SiO2 and TiO2 nanopowders were fabricated using the well-known Stöber process, and the double-layered structure was self-assembled by an evaporation method. Self-assembled TiO2 thin film was coated at a 1.2 mm thickness by the evaporation process, and 3 atomic layers of the SiO2 layer was coated onto the TiO2 thin film. The relative reflectance peak intensity of the photonic bandgap in the specimen was 13% before thermal treatment. The peak value was increased by sequential heat-treatments and reached the highest value of 21% at 400 degrees C.

  1. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    PubMed

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-11-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  2. Determination of the SiO(2)/Si interface roughness by diffuse reflectance measurements.

    PubMed

    Roos, A; Bergkvist, M; Ribbing, C G

    1988-10-15

    The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.

  3. SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition.

    PubMed

    Boies, Adam M; Roberts, Jeffrey T; Girshick, Steven L; Zhang, Bin; Nakamura, Toshitaka; Mochizuki, Amane

    2009-07-22

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO2) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 degrees C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10(7) particles cm(-3).

  4. Transfer free graphene growth on SiO2 substrate at 250 °C

    NASA Astrophysics Data System (ADS)

    Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

    2017-03-01

    Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

  5. Transfer free graphene growth on SiO2 substrate at 250 °C

    PubMed Central

    Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

    2017-01-01

    Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures. PMID:28251997

  6. Transfer free graphene growth on SiO2 substrate at 250 °C.

    PubMed

    Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

    2017-03-02

    Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

  7. Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

    PubMed

    Lee, Jeong-Hoon; Song, Kwan-Woo; Park, Min-Ho; Kim, Hyung-Kyu; Yang, Cheol-Woong

    2011-07-01

    Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film.

  8. SiO2 and TiO2 nanoparticles synergistically trigger macrophage inflammatory responses.

    PubMed

    Tsugita, Misato; Morimoto, Nobuyuki; Nakayama, Masafumi

    2017-04-11

    Silicon dioxide (SiO2) nanoparticles (NPs) and titanium dioxide (TiO2) NPs are the most widely used inorganic nanomaterials. Although the individual toxicities of SiO2 and TiO2 NPs have been extensively studied, the combined toxicity of these NPs is much less understood. In this study, we observed unexpected and drastic activation of the caspase-1 inflammasome and production of IL-1β in mouse bone marrow-derived macrophages stimulated simultaneously with SiO2 and TiO2 NPs at concentrations at which these NPs individually do not cause macrophage activation. Consistent with this, marked lung inflammation was observed in mice treated intratracheally with both SiO2 and TiO2 NPs. In macrophages, SiO2 NPs localized in lysosomes and TiO2 NPs did not; while only TiO2 NPs produced ROS, suggesting that these NPs induce distinct cellular damage leading to caspase-1 inflammasome activation. Intriguingly, dynamic light scattering measurements revealed that, although individual SiO2 and TiO2 NPs immediately aggregated to be micrometer size, the mixture of these NPs formed a stable and relatively monodisperse complex with a size of ~250 nm in the presence of divalent cations. Taken together, these results suggest that SiO2 and TiO2 NPs synergistically induce macrophage inflammatory responses and subsequent lung inflammation. Thus, we propose that it is important to assess the synergistic toxicity of various combinations of nanomaterials.

  9. Alkaline-resistant titanium dioxide thin film displaying visible-light-induced superhydrophilicity initiated by interfacial electron transfer.

    PubMed

    Taguchi, Tsuyoshi; Ni, Lei; Irie, Hiroshi

    2013-04-16

    We synthesized a three-layer-type photocatalytic structure (TiO2/Cu(II)SiO2/SiO2), consisting of TiO2 on Cu(II)-grafted SiO2, which was deposited on a SiO2-coated glass substrate, and investigated its visible-light absorption and hydrophilic properties. Water contact angle measurements revealed visible-light-induced superhydrophilicity at the film surface that was initiated by interfacial electron transfer (IFET) at the interface of TiO2 and Cu(II)SiO2. Monitoring the oxidation state of Pb(2+) ions confirmed that the IFET-initiated holes diffused to the TiO2 surface, where they likely contributed to the hydrophilic conversion. We also demonstrated that layer-structured TiO2/Cu(II)SiO2/SiO2 was stable under alkaline conditions. Thus, we successfully synthesized alkaline-resistant TiO2 that displays visible-light-induced superhydrophilicity.

  10. Three-dimensional conductive networks based on stacked SiO2@graphene frameworks for enhanced gas sensing.

    PubMed

    Huang, Da; Yang, Zhi; Li, Xiaolin; Zhang, Liling; Hu, Jing; Su, Yanjie; Hu, Nantao; Yin, Guilin; He, Dannong; Zhang, Yafei

    2017-01-07

    Graphene is an ideal candidate for gas sensing due to its excellent conductivity and large specific surface areas. However, it usually suffers from sheet stacking, which seriously debilitates its sensing performance. Herein, we demonstrate a three-dimensional conductive network based on stacked SiO2@graphene core-shell hybrid frameworks for enhanced gas sensing. SiO2 spheres are uniformly encapsulated by graphene oxide (GO) through an electrostatic self-assembly approach to form SiO2@GO core-shell hybrid frameworks, which are reduced through thermal annealing to establish three-dimensional (3D) conductive sensing networks. The SiO2 supported 3D conductive graphene frameworks reveal superior sensing performance to bare reduced graphene oxide (RGO) films, which can be attributed to their less agglomeration and larger surface area. The response value of the 3D framework based sensor for 50 ppm NH3 and 50 ppm NO2 increased 8 times and 5 times, respectively. Additionally, the sensing performance degradation caused by the stacking of the sensing materials is significantly suppressed because the graphene layers are separated by the SiO2 spheres. The sensing performance decays by 92% for the bare RGO films when the concentration of the sensing material increases 8 times, while there is only a decay of 25% for that of the SiO2@graphene core-shell hybrid frameworks. This work provides an insight into 3D frameworks of hybrid materials for effectively improving gas sensing performance.

  11. Damage during SiO2 Etching by Low-Angle Forward Reflected Neutral Beam

    NASA Astrophysics Data System (ADS)

    Lee, Dohaing; Chung, Minjae; Park, Sangduk; Yeom, Geunyoung

    2002-12-01

    In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that when SiO2 was etched with the energetic reactive radical beams generated with SF6, SiO2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no etch damage could be found.

  12. Cleavage of rutile SiO2 hemi-crystals: Insights from first-principles investigations

    NASA Astrophysics Data System (ADS)

    Tamijani, Ali Abbaspour; Ebrahimiaqda, Elham

    2017-05-01

    In the current study, less-explored low-index surfaces of rutile-like SiO2 have been examined through first-principles electronic structure calculations. This work reports on the surface energies of the (110), (100), (101) and (001) facets of high-pressure SiO2 polymorph, also referred to stishovite. Surface-induced atomic displacements with respect to bulk were computed using a periodic slab approach. A multitude of density functional approximations, both dispersion-free and dispersion-corrected, were applied to perform the necessary calculations. Anomalously, the (100) plane was discovered to be the most energetically favorable low-index facet. It also turned out that the (001) was the least stable cut. In addition, the level of agreement between our computed surface energies and atomic shifts for rutile SiO2(110) and the results of the investigation prior to the present work was found to be acceptable.

  13. Direct observation of blocked nanoscale surface evaporation on SiO2 nanodroplets

    NASA Astrophysics Data System (ADS)

    Wan, Neng; Xu, Jun; Sun, Li-Tao; Martini, Matteo; Huang, Qing-An; Hu, Xiao-Hui; Xu, Tao; Bi, Heng-Chang; Sun, Jun

    2012-10-01

    Nano-scale surface evaporation of SiO2 nanodroplets from a volcano-shaped tip (tip diameter d ˜ 20 nm to 70 nm) was observed directly using an in situ transmission electron microscopy method. Au nanoparticles, those precipitated in the SiO2 matrix after an Au catalyzed growth, diffused and pinned onto the evaporation surface, which induced blocked evaporation dynamics. Our observations provide direct evidences of blocked evaporation dynamics caused by small-sized nanoparticles at the nanometer scale.

  14. Structural, ferroelectric and optical properties of Bi2VO5.5 thin films deposited on platinized silicon {(100) Pt/TiO2/SiO2/Si} substrates

    NASA Astrophysics Data System (ADS)

    Kumari, N.; Krupanidhi, S. B.; Varma, K. B. R.

    2008-06-01

    Bismuth vanadate (Bi2VO5.5, BVO) thin films have been deposited by a pulsed laser ablation technique on platinized silicon substrates. The surface morphology of the BVO thin films has been studied by atomic force microscopy (AFM). The optical properties of the BVO thin films were investigated using spectroscopic ellipsometric measurements in the 300 820 nm wavelength range. The refractive index (n), extinction coefficient (k) and thickness of the BVO thin films have been obtained by fitting the ellipsometric experimental data in a four-phase model (air/BVOrough/BVO/Pt). The values of the optical constants n and k that were determined through multilayer analysis at 600 nm were 2.31 and 0.056, respectively. For fitting the ellipsometric data and to interpret the optical constants, the unknown dielectric function of the BVO films was constructed using a Lorentz model. The roughness of the films was modeled in the Brugmann effective medium approximation and the results were compared with the AFM observations.

  15. Device Quality SiO2 Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating

    NASA Astrophysics Data System (ADS)

    Jiang, Nan; Hugon, Marie-Christine; Agius, Bernard; Kretz, Thierry; Plais, François; Pribat, Didier; Carriere, Thierry; Puech, Michel

    1992-10-01

    The deposition of high electrical quality SiO2 films on Si wafers has been achieved without substrate heating, (T<˜ 100°C), using distributed electron cyclotron resonance (DECR) microwave plasmas. We have studied the effects of the reactant gas mixture composition (O2/SiH4) on the dielectric behavior of DECR SiO2. The electrical performances of both Si-SiO2 interfaces and SiO2 films in metal-oxide-semiconductor (MOS) structures were assessed by several characterization methods including critical field (Ec) evaluation, fixed charge densities (Qox) and interface traps densities (Dit) determinations. We report typical values of Ec around 6 MV\\cdotcm-1, and Qox and Dit densities around 2× 1010 cm-2 and 3× 1010 cm-2\\cdoteV-1 respectively. Thin film SOI-MOSFETs have also been fabricated to prove the DECR oxide quality.

  16. Characterization and application of HfO2 - SiO2 mixtures produced by ion-beam sputtering technology

    NASA Astrophysics Data System (ADS)

    Kičas, S.; BatavičiÅ«tÄ--, GintarÄ--; Juškevičius, Kestutis; Tolenis, Tomas; Drazdys, Ramutis; Buzelis, Rytis; Melninkaitis, Andrius

    2013-11-01

    In the past years the usage of mixed oxides coatings lead to an important improvement of laser damage threshold and quality of optical elements. In this study influence of post treatment procedure - ex-situ annealing - is examined in terms of quality, optical constants and laser induced damage threshold (LIDT) of mixed HfO2 and SiO2 coatings. Monolayer thin films containing different fractions of HfO2 are deposited with ion beam sputtering technology (IBS.) All samples are post annealed at different temperatures and optimal regimes are defined. Refractive index and absorption coefficient dispersion is evaluated from transmission spectra measurements. Surface roughness of all samples is characterized before and after deposition and annealing, using atomic force microscopy (AFM). Microstructural changes are identified from changes in surface topography. Further, optical resistance was characterized by 5.7 ns duration pulses for 355 nm wavelength laser radiation, performing 1-on-1 sample exposure tests with high resolution micro-focusing approach for monolayer samples and S-on-1 tests for multilayer reflectors. Morphology of damaged sites was analyzed through optical microscopy. Finally, conclusions about annealing effect for mixed HfO2 and SiO2 monolayer and multilayer coatings are made.

  17. Dielectric SiO2 Planarization Using MnO2 Slurry

    NASA Astrophysics Data System (ADS)

    Kishii, Sadahiro; Nakamura, Ko; Hanawa, Kenzo; Watanabe, Satoru; Arimoto, Yoshihiro; Kurokawa, Syuhei; Doi, Toshiro K.

    2012-01-01

    MnO2 slurry can polish SiO2 film faster and planarize wide feature steps (2 ×2 mm2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO2 abrasive directly reacts on the SiO2 film. In post-Chemical mechanical polishing (CMP), the MnO2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H2O2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H2O2.

  18. Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air.

    PubMed

    Esro, Mazran; Kolosov, Oleg; Jones, Peter J; Milne, William I; Adamopoulos, George

    2017-01-11

    Silicon dioxide (SiO2) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO2 by thermal oxidation of silicon requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of ≈350 °C from pentane-2,4-dione solutions of SiCl4. SiO2 dielectrics were investigated by means of UV-vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (RRMS < 1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10(-7) A/cm(2) at 1 MV/cm, and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO2 stoichiometry and FTIR spectra reveal features related to SiO2 only. Thin film transistors implementing spray-coated SiO2 gate dielectrics and C60 and pentacene semiconducting channels exhibit excellent transport characteristics, i.e., negligible hysteresis, low leakage currents, high on/off current modulation ratio on the order of 10(6), and high carrier mobility.

  19. Synthesis and characterization of amorphous SiO2 nanowires via pulsed laser deposition accompanied by N2 annealing

    NASA Astrophysics Data System (ADS)

    Li, Hui; Guan, Leilei; Xu, Zhuoqi; Zhao, Yu; Sun, Jian; Wu, Jiada; Xu, Ning

    2016-12-01

    Amorphous SiO2 nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N2. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO2 nanowires is about 1200 °C and the grown SiO2 nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO2 and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO2 nanowire growth in the solid-liquid-solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350-800 nm, meanwhile the photoluminescence spectra of the as-grown SiO2 nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm.

  20. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  1. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  2. Direct Imaging and First Principles Studies of Si3N4/SiO2 Interface

    NASA Astrophysics Data System (ADS)

    Walkosz, Weronika; Klie, Robert; Ogut, Serdar; Mikijelj, Bilijana; Pennycook, Stephen; Idrobo, Juan C.

    2010-03-01

    It is well known that the composition of the integranular films (IGFs) in sintered polycrystalline silicon nitride (Si3N4) ceramics controls many of their physical and mechanical properties. A considerable effort has been made to characterize these films on the atomic scale using both experimental and theoretical methods. In this talk, we present results from a combined atomic-resolution Z-contrast and annular bright field imaging, electron energy-loss spectroscopy, as well as ab initio studies of the interface between β-Si3N4 (10-10) and SiO2 intergranular film. Our results show that O replaces N at the interface between the two materials in agreement with our theoretical calculations and that N is present in the SiO2 IGF. Moreover, they indicate the presence of atomic columns completing Si3N4 open rings, which have not been observed experimentally at the recently imaged Si3N4/rare-earth oxides interfaces, but have been predicted theoretically on bare Si3N4 surfaces. The structural and electronic variations at the Si3N4/SiO2 interface will be discussed in detail, focusing in particular on bonding characteristics.

  3. TiO2/SiO2 porous composite thin films: Role of TiO2 areal loading and modification with gold nanospheres on the photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Levchuk, Irina; Sillanpää, Mika; Guillard, Chantal; Gregori, Damia; Chateau, Denis; Parola, Stephane

    2016-10-01

    The aim of the work was to study photocatalytic activity of composite TiO2/Au/SiO2 thin films. Coatings were prepared using sol-gel technique. Physicochemical parameters of coatings were characterized using UV-vis spectrometry, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectrometry (XPS), inductively coupled plasma optical emission spectroscopy (ICP-OES), ellipsometry, tactile measurements, goniometry and diffuse reflectance measurements. The photocatalytic activity of the films was tested in batch mode using aqueous solution of formic acid. Changes of formic acid concentration were determined by means of high pressure liquid chromatography (HPLC). Increase of initial degradation rate of formic acid was detected for TiO2/Au/SiO2 films with gold nanoparticle's load 0.5 wt.% and 1.25 wt.%. However, deeper insights using more detailed characterization of these coatings demonstrated that the improvement of the photocatalytic activity is more probably attributed to an increase in the areal loading of TiO2.

  4. Screen-printed photochromic textiles through new inks based on SiO2@naphthopyran nanoparticles.

    PubMed

    Pinto, Tânia V; Costa, Paula; Sousa, Céu M; Sousa, Carlos A D; Pereira, Clara; Silva, Carla J S M; Pereira, Manuel Fernando R; Coelho, Paulo J; Freire, Cristina

    2016-10-05

    Photochromic silica nanoparticles (SiO2@NPT), fabricated through covalent immobilization of silylated naphthopyrans based on 2H-naphtho[1,2-b]pyran (S1, S2) and 3H-naphtho[2,1-b]pyran (S3, S4) or through direct adsorption of parent naphthopyrans (NPT 1, 3) onto silica nanoparticles, were successfully incorporated onto cotton fabrics by screen-printing process. Two aqueous acrylic (AC) and polyurethane (PU)-based inks were used as dispersing media. All textiles exhibited reversible photochromism under UV and solar irradiation, developing fast response and intense coloration. The fabrics coated with SiO2@S1 and SiO2@S2 showed a rapid color change and high contrast (ΔE*ab = 39-52), despite presenting slower bleaching kinetics (2-3 h to fade to the original color), whereas the textiles coated with SiO2@S3 and SiO2@S4 exhibited an excellent engagement between coloration and decoloration rates (coloration and fading times of 1 and 2 min, respectively; ΔE*ab = 27-53). The PU-based fabrics showed excellent results during the washing fastness tests, while the AC-based textiles only evidenced good results when a protective transfer film was applied over the printed design. In general, all textiles presented high color contrast, high photostability (during continuous UV irradiation) and stable photochromic responses upon twelve successive UV light/dark cycles, becoming excellent alternatives to other photochromic textiles reported in the literature.

  5. Densification of ∼5 nm-thick SiO2 layers by nitric acid oxidation

    NASA Astrophysics Data System (ADS)

    Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

    2017-08-01

    Low-temperature nitric acid (HNO3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of -1 V decreases by about two orders of magnitude from 1.868 × 10-5 A/cm2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10-8 A/cm2) approximately three orders of magnitude less than the as-grown SiO2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si1+, Si2+ and Si3+) in the SiO2/Si interface, as well as a decrease in the equilibrium density of defect sites (Nd) and fixed charge density (Nf). The barrier height (Vt) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO2/Si interface.

  6. Evidence of swelling of SiO2 upon thermal annealing

    NASA Astrophysics Data System (ADS)

    Banerjee, S.; Chakraborty, S.; Lai, P. T.

    2002-04-01

    Ultrathin SiO2 film was thermally grown on Si(001) substrate by dry oxidation and wet oxidation processes. The films were then subjected to thermal annealing (TA) at 1000 °C for 30 min. The structural characterization of the as-grown and the TA samples was carried out using the grazing incidence x-ray reflectivity technique. The analysis of the x-ray reflectivity data was carried out by using a model independent formalism based on the distorted wave Born approximation for obtaining the electron density profile (EDP) of the film as a function of depth. The EDP of both films show a decrease in the electron density as well as an increase in their thickness when the films are subjected to TA. It has also been observed that the total number of electrons is conserved in the oxide film after TA. Our analysis of the x-ray reflectivity data indicates that the SiO2 film swells and its interface with the substrate modifies upon TA.

  7. REE-SIO2 Systematics in Mor Gabbros and Associated Plagiogranites from the Fournier Oceanic Fragment, New Brunswick, Canada

    NASA Astrophysics Data System (ADS)

    Brophy, J. G.

    2010-12-01

    Seawater influx into hot, dry MOR gabbro can initiate hydration-induced melting and the generation of intermediate to felsic partial melts collectively referred to as plagiogranite. In a recent modeling study, Brophy (2009) suggested that the REE abundances of partial melts generated in this fashion should be characterized by unique patterns of REE-SiO2 variation. Specifically, REE abundances (modeled as enrichment factors, Cl/Co) should show a positive correlation with increasing SiO2 up to around 60 wt. % followed by a steady decrease in abundance as liquid SiO2 increases to around 76%. For liquids of around 55% SiO2 the degree of enrichment is around 2 for all of the REE. However, Cl/Co in the intermediate liquids of around 60 % SiO2 steadily decreases from ~5 for La to ~3 for Yb. Simarlarly, Cl/Co in the high SiO2 liquids of around 76% SiO2 decrease from ~3 for La to ~1 for Yb. If these model predictions are correct, the REE-SiO2 systematics of any naturally occurring suite of plagiogranite and MOR gabbro could be used to assess a partial melting as opposed to crystal fractionation origin. To test the model predictions, a suite of MOR gabbros and intrusive veins of plagiogranite were collected from the Fournier Oceanic Fragment, a middle Ordovician ophiolite sequence located along the northern shore of New Brunswick, and the type exposure for plagiogranites generated by hydration-induced MOR gabbro melting (Flagler and Spray, 1991). The MOR gabbros range from 48 to 55 % SiO2 while the intrusive plagiogranites range from 57 to 78 % SiO2 (anhydrous basis). When REE abundances are plotted against whole rock SiO2 they show all of the model features described above, though the absolute abundances require an initial gabbroic source rock that is more enriched in the REE than the host gabbros themselves. This correspondence between modeled and observed REE- SiO2 variations confirms the model predictions of Brophy (2009) and suggests that REE- SiO2 systematics represent

  8. The effect of the applied electric field on laser-induced damage of dielectric thin films

    NASA Astrophysics Data System (ADS)

    Wu, Shenjiang; Su, Junhong; Li, Dangjuan; Xu, Junqi; Kar, Satyananda; Ge, Jinman

    2017-01-01

    Laser-induced damage threshold (LIDT) in optical materials plays an important role in laser-matter interaction. The anti-laser ability of dielectric films are very important for the application in optical windows. In this paper, HfO2 and SiO2 dielectric thin films with thicknesses of about 240 nm and with good infrared characteristics are deposited by the vacuum thermal evaporation technique. The laser with peak density of 11 J cm-2 is used to irradiate the dielectric thin films. The laser damage morphologies under different laser radiation densities and with or without external electrical fields are studied. The results indicate that the electron density excited by laser has a directly relationship with the absorption coefficient; the increasing electric field reduces the laser energy density, and decreases the optical absorption in the center of laser irradiation region, hence the laser damage area decreases.

  9. Studies on TiO2/SiO2 and Pd/TiO2/SiO2 Catalysts in Photoreduction of CO2 with H2O to Methanol

    NASA Astrophysics Data System (ADS)

    Zbudniewek, K.; Góralski, J.; Rynkowski, J.

    2012-12-01

    The development of industry induced a massive increase in the emission of carbon dioxide into the atmosphere. A large amount of CO2 and its general availability causes that it could be a cheap reactant in a reaction that runs in a way similar to photosynthesis in plants. Pure TiO2 and metal doped TiO2 are the most studied semiconductor catalysts for photoreduction of CO2. The TiO2/SiO2 and Pd/TiO2/SiO2 catalysts were prepared and studied by temperature-programmed desorption, X-ray diffraction analysis, SEM-EDS, temperature-programmed reduction and then used for the methanol synthesis. The photoactivity of Pd/TiO2/SiO2 catalysts in the reduction of CO2 with H2O was tested at room temperature using photoreactor equipped with 16 lamps. The wavelength was characteristic of near ultraviolet. Post-reaction products were identified with gas chromatograph equipped with the flame ionization detector. Pd doping made the catalysts photoactive and the photoactivity of catalysts was changing as follows: 1%Pd/5%TiO2/SiO2 > 1% Pd/10% TiO2/SiO2 > 1% Pd/15% TiO2/SiO2. Optimum ultraviolet radiation time in the photoreduction of CO2 to methanol was 7 h. An addition of Pd does not change the surface of the carrier.

  10. Fabrication of high performance thin-film transistors via pressure-induced nucleation.

    PubMed

    Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

    2014-10-31

    We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm(2)/Vs.

  11. Properties of SiO2 grown on Ti, Co, Ni, Pd, and Pt silicides

    NASA Astrophysics Data System (ADS)

    Bartur, M.; Nicolet, M.-A.

    1984-01-01

    Successful utilization of silicides for VLSI applcations depends strongly on the formation of electrically insulating oxide on top of the silicide (1) . It is found that almost all silicides on a Si substrate can be oxidized to form an SiO2 layer on their surface. In this paper, we present some of the properties of such SiO2 layers formed on TiSi2, CoSi2, NiSi2, Pd2Si, and PtSi on a substrate following dry and wet oxidation. Electrical parameters that were investigated are the dielectric constant, dielectric strength (breakdown field), and pinhole density. The dielectric constant was found to be 3.49 ± 0.24, which is similar to the values reported for SiO2 grown on Si. The dielectric strength of the oxide layers depends on the polarity of the applied voltage, as is the case for oxide grown on poly-Si. Pinhole density in this oxide was also estimated and is less than 40 per cm2. The oxide density and stoichiometry were evaluated using Rutherford Backscattering Spectrometry (RBS) and DEKTAK, and compared to SiO2 grown on . The conclusion we have reached is that oxides grown on almost all the silicides investigated (except PdSi), hold promise for integrated circuit application. The main problem is the suicide roughness, induced by the thermal oxidation, that reduces the dielectric breakdown field.

  12. Growth of SiO 2 on InP substrate by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lei, Po Hsun; Yang, Chyi Da

    2010-04-01

    We have grown silicon dioxide (SiO 2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2SiF 6), 0.1 M boric acid (H 3BO 3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2O 2) that can regulate the concentration of OH - ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2SiF 6 in treatment solution.

  13. Study of the kinetics and mechanism of the thermal nitridation of SiO2

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.

    1985-01-01

    X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiO(x)N(y)/Si interface is initially at the interface, but moves 20-25 A away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.

  14. Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

    NASA Astrophysics Data System (ADS)

    Tóvári, E.; Csontos, M.; Kriváchy, T.; Fürjes, P.; Csonka, S.

    2014-09-01

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material platform for graphene based nanoelectromechanical applications.

  15. Synthesis and size differentiation of Ge nanocrystals in amorphous SiO2

    NASA Astrophysics Data System (ADS)

    Ağan, S.; Çelik-Aktaş, A.; Zuo, J. M.; Dana, A.; Aydınlı, A.

    2006-04-01

    Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700 1010 °C for durations of 5 to 60 min. Transmission electron microscopy (TEM) was used to investigate Ge nanocrystal formation in SiO2:Ge films. High-resolution cross section TEM images, electron energy-loss spectroscopy and energy dispersive X-ray analysis (EDX) data indicate that Ge nanocrystals are present in the amorphous silicon dioxide films. These nanocrystals are formed in two spatially separated layers with average sizes of 15 and 50 nm, respectively. EDX analysis indicates that Ge also diffuses into the Si substrate.

  16. Hydrogen Electrochemistry in SiO2 Related to Breakdown of Gate Oxides

    NASA Astrophysics Data System (ADS)

    Bloechl, Peter

    2000-03-01

    Further scaling of semiconductor devices faces major difficulties due to the limited lifetime of the gate oxide, which will be scaled below 2 ~ nm within 5 years. Breakdown has been correlated with stress-induced leakage currents (SILC) induced by hydrogen. State-of-the-art electronic structure calculations of defects related to hydrogen and oxygen vacancies in SiO2 have been performed. The origin of the SILC is attributed to the hydrogen bridge, as the only stable defect allowing two-step tunneling below 3 ~eV. The result is confirmed by EDMR measurements. I argue that SILC is not the direct cause of SILC, but some related electrochemical process. Hydrogen reactions with SiO2 indicate the creation of charged coordination defects, which results in a pathway for hydrogen induced electromigration that potentially may be the cause of breakdown.

  17. Formation and microstructural properties of locally distributed ZnSiO3 nanoparticles embedded in a SiO2 layer by using a focused electron beam.

    PubMed

    Shin, J W; No, Y S; Kim, T W; Choi, W K

    2008-10-01

    Locally distributed crystalline ZnSiO3 nanoparticles embedded in a SiO2 layer inserted between the ZnO thin film and the Si substrate were formed using transmission electron microscopy (TEM) with a focused electron beam irradiation process. High-resolution TEM (HRTEM) images and energy dispersive X-ray spectroscopy (EDS) profiles showed that ZnSiO3 nanocrystals with a size of approximately 6 nm were formed in the SiO2 layer. The formation mechanisms of the ZnSiO3 nanocrystals in the SiO2 layer are described on the basis of the HRTEM images and the EDS profiles.

  18. Nd3+-doped colloidal SiO2 composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers

    NASA Astrophysics Data System (ADS)

    Liu, Tingting; Lei, Hong

    2017-08-01

    Abrasive is one of the most important factors in chemical mechanical polishing (CMP). In order to improve the polishing qualities of sapphire substrates, the novel Nd3+-doped colloidal SiO2 composite abrasives were prepared by seed-induced growth method. In this work, there were a series of condensation reactions during the synthesis process of Nd3+-doped colloidal SiO2 composite abrasives and the silica cores were coated by shells (which contains SiO2, Nd2Si2O7 and Nd(OH)3) via chemical bonds and hydrogen bonds in the Nd3+-doped colloidal SiO2 composite abrasives, which made the composite abrasives' core-shell structure more sTable Scanning electron microscopy (SEM) showed that Nd3+-doped colloidal SiO2 composite abrasives were spherical and uniform in size. And the acting mechanisms of Nd3+-doped colloidal SiO2 composite abrasives on sapphire in CMP were investigated. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis and X-ray photoelectron spectroscopy (XPS) analysis demonstrated that the solid-state chemical reactions between the shells (which contained SiO2, Nd2Si2O7 and Nd(OH)3) of Nd3+-doped colloidal SiO2 composite abrasives and the sapphire occurred during the CMP process. Furthermore, Nd3+-doped colloidal SiO2 composite abrasives exhibited lower surface roughness and higher material removal rate (MRR) than the pure colloidal SiO2 abrasives in the same polishing conditions, which was attributed to the solid-state chemical reactions between shells of Nd3+-doped colloidal SiO2 composite abrasives and sapphire.

  19. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  20. Outer core stratification by crystallization of SiO2

    NASA Astrophysics Data System (ADS)

    Helffrich, G. R.; Hirose, K.; Morard, G.; Sinmyo, R.

    2016-12-01

    Wavespeeds lower than PREM's near-uniform self-compression profile in the outermost outer core constitute evidence for a radial compositional gradient there, and possibly for stable stratification. Based on melting experiments in the Fe-Si-O system in the diamond anvil at outer core pressures and temperatures that show crystallization of SiO2, we developed a thermodynamic model of SiO2 saturation in liquid Fe at high pressure and temperature conditions suitable for modeling magma ocean and outer core processes. Conditions in a magma ocean between 30-50 GPa allow for significant incorporation of Si + O in the metal, which, after the core evolves to its present temperature (3500-4500 K at the CMB), leads to exsolution of SiO2. The high efficiency of driving a dynamo by crystallization allows a dynamo of comparable strength to the present to be powered throughout Earth history. Using a transition-element hard-sphere model for seismic wavespeeds, we show that the continuous crystallization of SiO2 at the top of the core produces denser, iron-enriched liquid that mixes downward into the core. The net effects of the density and mean atomic weight change in the mixed region leads to reduced wavespeeds in the top of the outer core that require only a small change in concentration of the SiO2 component in the liquid, about 0.15 wt%.

  1. Tribological Properties of TiO2/SiO2 Double Layer Coatings Deposited on CP-Ti

    NASA Astrophysics Data System (ADS)

    Çomakli, O.; Yazici, M.; Yetim, T.; Yetim, A. F.; Çelik, A.

    In the present paper, the influences of different double layer on wear and scratch performances of commercially pure Titanium (CP-Ti) were investigated. TiO2/SiO2 and SiO2/TiO2 double layer coatings were deposited on CP-Ti by sol-gel dip coating process and calcined at 750∘C. The phase structure, cross-sectional morphology, composition, wear track morphologies, adhesion properties, hardness and roughness of uncoated and coated samples were characterized with X-ray diffraction, scanning electron microscopy (SEM), nano-indentation technique, scratch tester and 3D profilometer. Also, the tribological performances of all samples were investigated by a pin-on-disc tribo-tester against Al2O3 ball. Results showed that hardness, elastic modulus and adhesion resistance of double layer coated samples were higher than untreated CP-Ti. It was found that these properties of TiO2/SiO2 double layer coatings have higher than SiO2/TiO2 double layer coating. Additionally, the lowest friction coefficient and wear rates were obtained from TiO2/SiO2 double layer coatings. Therefore, it was seen that phase structure, hardness and film adhesion are important factors on the tribological properties of double layer coatings.

  2. Hydroxyapatite-TiO2-SiO2-Coated 316L Stainless Steel for Biomedical Application

    NASA Astrophysics Data System (ADS)

    Sidane, Djahida; Khireddine, Hafit; Bir, Fatima; Yala, Sabeha; Montagne, Alex; Chicot, Didier

    2017-07-01

    This study investigated the effectiveness of titania (TiO2) as a reinforcing phase in the hydroxyapatite (HAP) coating and silica (SiO2) single layer as a bond coat between the TiO2-reinforced hydroxyapatite (TiO2/HAP) top layer and 316L stainless steel (316L SS) substrate on the corrosion resistance and mechanical properties of the underlying 316L SS metallic implant. Single layer of SiO2 film was first deposited on 316L SS substrate and studied separately. Water contact angle measurements, X-ray photoelectron spectroscopy, and Fourier transform infrared spectrophotometer analysis were used to evaluate the hydroxyl group reactivity at the SiO2 outer surface. The microstructural and morphological results showed that the reinforcement of HAP coating with TiO2 and SiO2 reduced the crystallite size and the roughness surface. Indeed, the deposition of 50 vol pct TiO2-reinforced hydroxyapatite layer enhanced the hardness and the elastic modulus of the HAP coating, and the introduction of SiO2 inner layer on the surface of the 316L SS allowed the improvement of the bonding strength and the corrosion resistance as confirmed by scratch studies, nanoindentation, and cyclic voltammetry tests.

  3. A kinetic model for the thermal nitridation of SiO2/Si

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Madhukar, A.

    1986-01-01

    To explain the observed nitrogen distributions in thermally nitridated SiO2 films, a kinetic model is proposed in which the nitridation process is simulated, using the first-order chemical kinetics and Arrhenius dependence of the diffusion and reaction rates on temperature. The calculations show that initially, as the substrate reacts with diffusing nitrogen, a nitrogen-rich oxynitride forms at the SiO2-Si interface, while at nitridation temperatures above 1000 C, an oxygen-rich oxynitride subsequently forms at the interface, due to reaction of the substrate with an increasingly concentrated oxygen displaced by the slower nitridation of the SiO2. This sequence of events results in a nitrogen distribution in which the peak of the interfacial nitrogen concentration occurs away from the interface. The results are compared with the observed nitrogen distribution. The calculated results have correctly predicted the positions of the interfacial nitrogen peaks at the temperatures of 800, 1000, and 1150 C. To account for the observed width of the interfacial nitrogen distribution, it was found necessary to include in the simulations the effect of interfacial strain.

  4. Plasmonic properties of implanted Ag nanoparticles in SiO2 thin layer by spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Battie, Yann; En Naciri, Aotmane; Chaoui, Nouari; Le Gall, Yann; Muller, Dominique; Carrada, Marzia; Mathiot, Daniel

    2017-08-01

    We report an uncommon study of the insertion of distributions of both volume fraction and depolarization factors in the modeling of the plasmonic properties of implanted Ag nanoparticles (Ag-NPs) in a SiO2 layer when using spectroscopic ellipsometry (SE) characterization. The Ag-NPs were embedded in the SiO2 matrix by Ag+ ion implantation at various doses of 0.5 × 1016, 1 × 1016, 2 × 1016, and 5 × 1016 ions cm-2. The formation of the Ag-NPs in a host matrix of SiO2 was controlled by transmission electron microscopy (TEM). The Ag-NPs are self-organized in the layer, and their mean radius ranges between 2 and 20 nm. The optical properties of layers were extracted by modeling the SE parameters by taking into account the depth profile concentration of Ag-NPs. The mixture of SiO2 and Ag-NP inclusions was modeled as an effective medium according to the shape distributed effective medium theory (SDEMT). In addition to the optical responses, it is shown that this model enables the explanation of the impact of NP shape distribution on the plasmon band and provides precious information about the NP shape characteristics. A good agreement was obtained between ellipsometry and TEM results. The distribution of the volume fraction in the film was found to lead to a gradient of effective dielectric function which was determined by the SDEMT model. The effective dielectric function reveals distinct Ag plasmon resonance varying as the Ag+ ions dose is varied. The real part of the dielectric function shows a significant variation around the plasmon resonance in accordance with the Kramers-Kronig equations. All determined optical parameters by SDEMT are provided and discussed. We highlight that SE combined with SDEMT calculations can be considered as a reliable tool for the determination of the NP shape and volume fraction distributions without the need of TEM.

  5. Highly transparent and efficient counter electrode using SiO2/PEDOT-PSS composite for bifacial dye-sensitized solar cells.

    PubMed

    Song, Dandan; Li, Meicheng; Li, Yingfeng; Zhao, Xing; Jiang, Bing; Jiang, Yongjian

    2014-05-28

    A highly transparent and efficient counter electrode was facilely fabricated using SiO2/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) inorganic/organic composite and used in bifacial dye-sensitized solar cells (DSCs). The optical properties of SiO2/PEDOT-PSS electrode can be tailored by the blending amount of SiO2 and film thickness, and the incorporation of SiO2 in PEDOT-PSS provides better transmission in the long wavelength range. Meanwhile, the SiO2/PEDOT-PSS counter electrode shows a better electrochemical catalytic activity than PEDOT-PSS electrode for triiodide reduction, and the role of SiO2 in the catalytic process is investigated. The bifacial DSC with SiO2/PEDOT-PSS counter electrode achieves a high power conversion efficiency (PCE) of 4.61% under rear-side irradiation, which is about 83% of that obtained under front-side irradiation. Furthermore, the PCE of bifacial DSC can be significantly increased by adding a reflector to achieve bifacial irradiation, which is 39% higher than that under conventional front-side irradiation.

  6. Analysis of SiO 2/TiO 2-SiO 2/SiO 2 coupled parallel waveguide structures using computer aided design techniques

    NASA Astrophysics Data System (ADS)

    Chaudhari, Chitrarekha; Gautam, D. K.

    2000-07-01

    The analysis of two coupled parallel rib waveguides of SiO 2/TiO 2-SiO 2/SiO 2 on silicon substrate is presented. The indigenously developed beam propagation method (BPM) simulation tools are applied to observe the power coupling between two identical parallel rib waveguides and to study the dependence of the coupling length on various parameters of the rib waveguides including the refractive indices, rib height, guide thickness, clad thickness and separation between them. The designs for the 3 dB coupler and demultiplexer for DWDM, based on the symmetric directional coupler, are optimized for minimum dimensions using the techniques, for the first time. The optimum device length for 3 dB coupler was calculated to be 650 μm with 0.016 dB losses. The 1.3 μm and 1.304 μm demultiplexer has been designed with the optimized device length of 1.02 mm and the losses less than 0.40 dB at both the wavelengths.

  7. Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.

    PubMed

    Poudel, P R; Paramo, J A; Poudel, P P; Diercks, D R; Strzhemechny, Y M; Rout, B; McDaniel, F D

    2012-03-01

    Amorphous carbon (a-C) nanoclusters were synthesized by the implantation of carbon ions (C-) into thermally grown silicon dioxide film (-500 nm thick) on a Si (100) wafer and processed by high temperature thermal annealing. The carbon ions were implanted with an energy of 70 keV at a fluence of 5 x 10(17) atoms/cm2. The implanted samples were annealed at 1100 degrees C for different time periods in a gas mixture of 96% Ar+4% H2. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and High Resolution Transmission Electron Microscopy (HRTEM) were used to study the structural properties of both the as-implanted and annealed samples. HRTEM reveals the formation of nanostructures in the annealed samples. The Raman spectroscopy also confirms the formation of carbon nano-clusters in the samples annealed for 10 min, 30 min, 60 min and 90 min. No Raman features originating from the carbon-clusters are observed for the sample annealed further to 120 min, indicating a complete loss of implanted carbon from the SiO2 layer. The loss of the implanted carbon in the 120 min annealed sample from the SiO2 layer was also observed in the XPS depth profile measurements. Room temperature photoluminescence (PL) spectroscopy revealed visible emissions from the samples pointing to carbon ion induced defects as the origin of a broad 2.0-2.4 eV band, and the intrinsic defects in SiO2 as the possible origin of the -2.9 eV bands. In low temperature photoluminescence spectra, two sharp and intense photoluminescence lines at -3.31 eV and -3.34 eV appear for the samples annealed for 90 min and 120 min, whereas no such bands are observed in the samples annealed for 10 min, 30 min, and 60 min. The Si nano-clusters forming at the Si-SiO2 interface could be the origin of these intense peaks.

  8. One-step process to fabrication of transparent superhydrophobic SiO2 paper

    NASA Astrophysics Data System (ADS)

    Li, Jian; Wan, Hongqi; Ye, Yinping; Zhou, Huidi; Chen, Jianmin

    2012-11-01

    A simple technique for fabrication of superhydrophobic SiO2 paper was developed by spraying hydrophobic SiO2 nanoparticles suspension on paper substrate. The hydrophobic SiO2 nanoparticles were prepared by imparting octadecyltrichloro group on SiO2 nanoparticles. The as-prepared superhydrophobic SiO2 paper exhibted high water contact angle and low water sliding angle. Futhermore, the obtained superhydrophobic SiO2 paper was found to be highly transparent and the visibility of the character on the paper was not changed after spray-coating the hydrophobic SiO2 nanoparticles.

  9. Shock temperatures of SiO2 and their geophysical implications

    NASA Technical Reports Server (NTRS)

    Lyzenga, G. A.; Ahrens, T. J.; Mitchell, A. C.

    1983-01-01

    High pressure shock state temperatures of SiO2 were measured in specimens of single crystal alpha-quartz and fused quartz. Projectile impact and pyrometry techniques were employed to impart pressures in the 60-140 GPa range. Shock-induced phase transformations were observed near 70 and 50 GPa along the alpha- and fused-quartz Hugoniots. It is suggested that the transformation consists of melting of the shock-synthesized stishovite, with melting delayed by the superheating of the crystalline phase. Details of the stishovite-liquid phase boundaries have been determined, including stishovite melting at 4500 K under 70 GPa, with the melting accompanied by a relative volume change of about 2.7% and a latent heat of fusion of about 2.4 MJ/kg. At 100 GPa, an approximate limit of 3500 K for the melting of SiO2 is indicated for solid mantle mineral assemblages, such as the earth's mantle

  10. Casimir friction force between a SiO2 probe and a graphene-coated SiO2 substrate

    NASA Astrophysics Data System (ADS)

    Volokitin, A. I.

    2016-10-01

    The possibility of mechanical detection of Casimir friction with the use of a noncontact atomic force microscope is discussed. A SiO2 probe tip located above a graphene-coated SiO2 substrate is subjected to the frictional force caused by a fluctuating electromagnetic field produced by a current in graphene. This frictional force will create the bend of a cantilever, which can be measured by a modern noncontact atomic force microscope. Both the quantum and thermal contributions to the Casimir frictional force can be measured using this experimental setup. This result can also be used to mechanically detect Casimir friction in micro- and nanoelectromechanical systems.

  11. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  12. Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1980-01-01

    A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

  13. Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1980-01-01

    A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

  14. Scalable flame synthesis of SiO2 nanowires: dynamics of growth.

    PubMed

    Tricoli, Antonio; Righettoni, Marco; Krumeich, Frank; Stark, Wendelin J; Pratsinis, Sotiris E

    2010-11-19

    Silica nanowire arrays were grown directly onto plain glass substrates by scalable flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate). The silicon dioxide films consisted of a network of interwoven nanowires from a few to several hundred nanometres long (depending on the process conditions) and about 20 nm in diameter, as determined by scanning electron microscopy. These films were formed rapidly (within 10-20 s) at high growth rates (ca 11-30 nm s(-1)) by chemical vapour deposition (surface growth) at ambient conditions on the glass substrate as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, on high purity quartz nearly no nanowires were grown while on steel substrates porous SiO(2) films were formed. Functionalization with perfluorooctyl triethoxysilane converted the nanowire surface from super-hydrophilic to hydrophobic. Additionally, their hermetic coating by thin carbon layers was demonstrated also revealing their potential as substrates for synthesis of other functional 1D composite structures. This approach is a significant step towards large scale synthesis of SiO(2) nanowires facilitating their utilization in several applications.

  15. Scalable flame synthesis of SiO2 nanowires: dynamics of growth

    PubMed Central

    Tricoli, Antonio; Righettoni, Marco; Krumeich, Frank; Stark, Wendelin J; Pratsinis, Sotiris E

    2013-01-01

    Silica nanowire arrays were grown directly onto plain glass substrates by scalable flame spray pyrolysis of organometallic solutions (hexamethyldisiloxane or tetraethyl orthosilicate). The silicon dioxide films consisted of a network of interwoven nanowires from a few to several hundred nanometres long (depending on the process conditions) and about 20 nm in diameter, as determined by scanning electron microscopy. These films were formed rapidly (within 10–20 s) at high growth rates (ca 11–30 nm s−1) by chemical vapour deposition (surface growth) at ambient conditions on the glass substrate as determined by thermophoretic sampling of the flame aerosol and microscopy. In contrast, on high purity quartz nearly no nanowires were grown while on steel substrates porous SiO2 films were formed. Functionalization with perfluorooctyl triethoxysilane converted the nanowire surface from super-hydrophilic to hydrophobic. Additionally, their hermetic coating by thin carbon layers was demonstrated also revealing their potential as substrates for synthesis of other functional 1D composite structures. This approach is a significant step towards large scale synthesis of SiO2 nanowires facilitating their utilization in several applications. PMID:20972311

  16. Lithiation of SiO2 in Li-ion batteries: in situ transmission electron microscopy experiments and theoretical studies.

    PubMed

    Zhang, Yuefei; Li, Yujie; Wang, Zhenyu; Zhao, Kejie

    2014-12-10

    Surface passivation has become a routine strategy of design to mitigate the chemomechanical degradation of high-capacity electrodes by regulating the electrochemical process of lithiation and managing the associated deformation dynamics. Oxides are the prevalent materials used for surface coating. Lithiation of SiO2 leads to drastic changes in its electro-chemo-mechanical properties from an electronic insulator and a brittle material in its pure form to a conductor and a material sustainable of large deformation in the lithiated form. We synthesized SiO2-coated SiC nanowires that allow us to focus on the lithiation behavior of the sub-10 nm SiO2 thin coating. We systematically investigate the structural evolution, the electronic conduction and ionic transport properties, and the deformation pattern of lithiated SiO2 through coordinated in situ transmission electron microcopy experiments, first-principles computation, and continuum theories. We observe the stress-mediated reaction that induces inhomogeneous growth of SiO2. The results provide fundamental perspectives on the chemomechanical behaviors of oxides used in the surface coating of Li-ion technologies.

  17. The enhanced immune response of hepatitis B virus DNA vaccine using SiO2@LDH nanoparticles as an adjuvant.

    PubMed

    Wang, Jin; Zhu, Rongrong; Gao, Bo; Wu, Bin; Li, Kun; Sun, Xiaoyu; Liu, Hui; Wang, Shilong

    2014-01-01

    Various approaches have been used to improve systemic immune response to infectious disease or virus, and DNA vaccination has been demonstrated to be one of these effective ways to elicit protective immunity against pathogens. Our previous studies showed that layered double hydroxides (LDH) nanoparticles could be efficiently taken up by the MDDCs and had an adjuvant activity for DC maturation. To further enhance the immune adjuvant activity of LDH, core-shell structure SiO2@LDH nanoparticles were synthesized with an average diameter of about 210 nm. And its high transfection efficiency in vitro was demonstrated by using GFP expression plasmid as model DNA. Exposing SiO2@LDH nanoparticles to macrophages caused a higher dose-dependent expression of IFN-γ, IL-6, CD86 and MHC II, compared with SiO2 and LDH respectively. Furthermore, in vivo immunization of BALB/c mice indicated that, DNA vaccine loaded-SiO2@LDH nanoparticles not only induced much higher serum antibody response than naked DNA vaccine and plain nanoparticles, but also obviously promoted T-cell proliferation and skewed T helper to Th1 polarization. Additionally, it was proved that the caveolae-mediated uptake of SiO2@LDH nanoparticles by macrophage lead to macrophages activation via NF-κB signaling pathway. Our results indicate that SiO2@LDH nanoparticles could serve as a potential non-viral gene delivery system. Copyright © 2013 Elsevier Ltd. All rights reserved.

  18. Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

    1979-01-01

    The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

  19. Dissolution Kinetics of SiO2 into CaO-Fe2O3-SiO2 Slag

    NASA Astrophysics Data System (ADS)

    Yu, Bin; Lv, Xuewei; Xiang, Shenglin; Xu, Jian

    2016-06-01

    High-basicity sinter is the predominant Fe-bearing material used in blast furnace process in East Asia. The dissolution of SiO2 into molten calcium ferrite influences the assimilation process. In this study, a rotating cylinder method was used to explore the dissolution kinetics of SiO2 into CaO-Fe2O3-SiO2 slag. The influencing factors, including temperature, rotating time and speed, and initial composition of the slag, were considered. Results showed that the dissolution rate increased with increasing rotation speed and temperature, whereas the increase in ω(SiO2) or ω(Fe2O3)/ ω(CaO) ratio in the initial slag composition decreased the dissolution rate. The diffusion coefficient and activation energy of SiO2 during the dissolution process ranged from 2.09 × 10-6 to 6.40 × 10-6 cm2 s-1 and 106.62 to 248.20 kJ mol-1, respectively. Concentration difference between the boundary layer and bulk phase was the primary driving force of the dissolution process; however, this process was also influenced by the slag viscosity and ion diffusivity.

  20. Coulomb-blockade peak spacing statistics of graphene quantum dots on SiO2

    NASA Astrophysics Data System (ADS)

    Herrmann, O.; Gould, C.; Molenkamp, L. W.

    2016-10-01

    Extrinsic disorder strongly affects the performance of graphene-based quantum dots. The standard SiO2 substrate is generally considered to be one major factor besides edge-induced disorder. In this report we present the fabrication of lithographically defined quantum dots on SiO2 with short and narrow constrictions and different central island sizes. Low temperature transport measurements display distinct Coulomb-blockade peaks with amplitudes exceeding what is commonly observed experimentally. The analysis of the normalized Coulomb-blockade peak spacing shows a size dependence, which has not previously been observed for devices on SiO2. Furthermore, a quantitative comparison of the peak spacing distribution to the literature shows that one of the two devices compares favorably to a similar sized dot placed on hexagonal boron nitride, which is known to reduce the substrate disorder. Our findings suggest that the other sources of extrinsic disorder, such as lithography residues, may play an important role for the performance of large graphene quantum dots.

  1. Multilayers of oppositely charged SiO2 nanoparticles: effect of surface charge on multilayer assembly.

    PubMed

    Lee, Daeyeon; Gemici, Zekeriyya; Rubner, Michael F; Cohen, Robert E

    2007-08-14

    The growth behavior of all-silica nanoparticle multilayer thin films assembled via layer-by-layer deposition of oppositely charged SiO2 nanoparticles was studied as a function of assembly conditions. Amine-functionalized SiO2 nanoparticles were assembled into multilayers through the use of three different sizes of negatively charged SiO2 nanoparticles. The assembly pH of the nanoparticle suspensions needed to achieve maximum growth for each system was found to be different. However, the surface charge /z/ of the negatively charged silica nanoparticles at the optimal assembly pH was approximately the same, indicating the importance of this parameter in determining the growth behavior of all-nanoparticle multilayers. When /z/ of the negatively charged nanoparticles lies between 0.6z(0) and 1.2z(0) (where z(0) is the pH-independent value of the zeta-potential of the positively charged nanoparticles used in this study), the multilayers show maximum growth for each system. The effect of particle size on the film structure was also investigated. Although nanoparticle size significantly influenced the average bilayer thickness of the multilayers, the porosity and refractive index of multilayers made from nanoparticles of different sizes varied by a small amount. For example, the porosity of the different multilayer systems ranged from 42 to 49%. This study further demonstrates that one-component all-nanoparticle multilayers can be assembled successfully by depositing nanoparticles of the same material but with opposite surface charge.

  2. Electrochemically controlled transport of lithium through ultrathin SiO2

    NASA Astrophysics Data System (ADS)

    Ariel, Nava; Ceder, Gerbrand; Sadoway, Donald R.; Fitzgerald, Eugene A.

    2005-07-01

    Monolithically integrating the energy supply unit on a silicon integrated circuit (IC) requires the development of a thin-film solid-state battery compatible with silicon IC fabrication methods, materials, and performance. We have envisioned materials that can be processed in a silicon fabrication environment, thus bringing local stored energy to silicon ICs. By incorporating the material directly onto the silicon wafer, the economic parallelism that silicon complementary metal-oxide-semiconductor (CMOS) technology has enjoyed can be brought to power incorporation in each IC on a processed wafer. It is natural to look first towards silicon CMOS materials, and ask which materials need enhancement, which need replacement, and which can be used "as is." In this study, we begin by using two existing CMOS materials and one unconventional material for the construction of a source of electric power. We have explored the use of thermally grown silicon dioxide (SiO2) as thin as 9nm acting as an electrolyte material candidate in a solid-state power cell integrated on silicon. Other components of the thin-film cell consisted of rf-sputtered lithium cobalt oxide (LiCoO2) as the cathode and highly doped n-type polycrystalline silicon (polysilicon) grown by low-pressure chemical-vapor deposition as the anode. All structures were fabricated using conventional microelectronics fabrication technology. The charge and discharge behaviors of the LiCoO2/SiO2/polysilicon cells were studied. On the basis of the impedance measurements an equivalent circuit model of an ultrathin cell was inferred, and its microstructure was characterized by electron microscopy imaging. In spite of its high series resistance (˜4×107Ω ), we have shown that an ultrathin layer of an as-deposited Li-free SiO2 is an interesting candidate for an electrolyte or controllable barrier layer in lithium-ion-based devices.

  3. Preparation of SiO2@polystyrene@polypyrrole sandwich composites and hollow polypyrrole capsules with movable SiO2 spheres inside.

    PubMed

    Yao, Tongjie; Lin, Quan; Zhang, Kai; Zhao, Dengfeng; Lv, Hui; Zhang, Junhu; Yang, Bai

    2007-11-15

    In this paper, we describe a flexible method for preparing conducting building blocks: SiO2@polystyrene@polypyrrole sandwich multilayer composites and hollow polypyrrole (PPy) capsules with movable SiO2 spheres inside. First, SiO2@polystyrene (PS) core/shell composites were synthesized, and then SiO2@PS@PPy sandwich multilayer composites were prepared by chemical polymerization of pyrrole monomer on the surface of SiO2@PS composites. Furthermore, hollow polypyrrole capsules with movable SiO2 spheres inside were obtained after removal of the middle PS layer. The diameter of sandwich multilayer composites could easily be controlled by adjusting the dosage of pyrrole monomer. The conductivities of composites increased with the increase of PPy content. After the insulating PS layer was selectively etched, the conductivities of hollow capsules with movable SiO2 spheres inside were much higher than those of the corresponding sandwich multilayer composites.

  4. Helicon plasma deposition of a TiO2/SiO2 multilayer optical filter with graded refractive index profiles

    NASA Astrophysics Data System (ADS)

    Wang, Xinrong; Masumoto, Hiroshi; Someno, Yoshihiro; Hirai, Toshio

    1998-06-01

    Thirty one layer TiO2/SiO2 optical filters with graded refractive index profiles were fabricated by helicon plasma sputtering at room temperature. Multilayer films were deposited on glass (BK7) and Si (100) substrates simultaneously and sequentially. The measured transmittance spectrum exhibited a reflectance of 99.8% at a central wavelength of 730 nm and high transmittance over the wavelength region outside of the reflected band as a result of the suppression of the sidelobes. The experimental transmittance spectrum corresponded almost completely with that calculated based on the optical multilayer film theory and using the measured refractive indices of TiO2, SiO2 and TiO2-SiO2 composite films. Transmission electron microscopic observations confirmed the expected microstructure of the filter.

  5. Synchrotron x-ray studies of vitreous SiO2 over Si(001). I. Anisotropic glass contribution

    NASA Astrophysics Data System (ADS)

    Castro-Colin, M.; Donner, W.; Moss, S. C.; Islam, Z.; Sinha, S. K.; Nemanich, R.; Metzger, H. T.; Bösecke, P.; Shülli, T.

    2005-01-01

    While numerous investigations of the structure and interface of amorphous SiO2 thermally grown on Si, theoretical as well as experimental, have been carried out over the years, a definitive picture of this thin gate oxide and its interface remains lacking. We have explored this issue using synchrotron x rays in grazing incidence geometry. In this geometry a fourfold modulation in the first sharp diffraction peak (FSDP) from thin vitreous SiO2 of 100 and 500 Å thickness can be observed. While the FSDP exhibits a modulation throughout the entire film, this modulation decays away from the interface. Reflectivity measurements were also performed, which reveal an interfacial layer of 3% density increase in the SiO2 film over the bulk (film) density.

  6. Magnetic properties of the SiO2(Co)/GaAs interface: Polarized neutron reflectometry and SQUID magnetometry

    NASA Astrophysics Data System (ADS)

    Ukleev, V. A.; Grigoryeva, N. A.; Dyadkina, E. A.; Vorobiev, A. A.; Lott, D.; Lutsev, L. V.; Stognij, A. I.; Novitskiy, N. N.; Mistonov, A. A.; Menzel, D.; Grigoriev, S. V.

    2012-10-01

    The effect of giant injection magnetoresistance (GIMR) was recently observed in a granular SiO2/(54-75 at. % Co) film on a semiconductor GaAs substrate in a temperature range near T=300 K. The magnetoresistance coefficient reaches a value of 105% in a magnetic field of 1.9 T and at a voltage of 90 V. A structural model of the film was proposed based on the results of the grazing-incidence small-angle scattering (GISAXS) and x-ray reflectivity, which showed a specific interface layer 70-75 Å thick separating bulk SiO2(Co) granular film from the semiconductor substrate. This layer is formed by a monolayer of flattened Co particles which are laterally spaced apart much further than the particles in the bulk film. In the present work, using polarized neutron reflectometry (PNR), we study both the structural and magnetic properties of SiO2(Co) film separately in the bulk and in the interface layer, which is possible due to the depth resolution of the method. Temperature-dependent PNR and magnetization measurements performed by Superconducting Quantum Interference Device (SQUID) revealed the occurrence of two types of magnetic nanoparticles with different blocking temperatures and magnetization. The magnetization hysteresis curve demonstrated specific two-loop structure in fields 0.5-2 T. Thus our self-consistent results of PNR, GISAXS, and SQUID measurements emphasize the role of the interface features in the SiO2(Co)/GaAs heterostructures and show a direction for further development of the GIMR theory.

  7. Enhanced photoluminescence from CdS with SiO2 nanopillar arrays

    PubMed Central

    Li, Wei; Wang, Shaolei; He, Sufeng; Wang, Jing; Guo, Yanyan; Guo, Yufeng

    2015-01-01

    In this paper, the enhanced photoluminescence from CdS thin film with SiO2 nanopillar array (NPA) was demonstrated. The CdS was prepared using chemical bath deposition in a solution bath containing CdSO4, SC(NH2)2, and NH4OH. The SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques. The nanopillar is about 50 nm in diameter, and the height is 150 nm. As a result, the sample with NPA shows an obvious improvement of photoluminescence (PL), compared with the one without NPA. In addition, we also observed that the PL intensity is increased ~5 times if the active layer is deposited on the nanopillar arrays and covered by a thin metal film of Al. It is noteworthy that the enhancement of photoluminescence could be attributed to the roughness of the surface, the 2D photonic band gap (PBG) effect and the surface plasmon resonance (SPR) effects. PMID:26077552

  8. Migration of organic residuals in interlayer oxide to {SiO2}/{Si} interface

    NASA Astrophysics Data System (ADS)

    Kodama, N.; Mori, H.; Saito, S.; Koyama, K.

    1996-09-01

    The isolation characteristics of COB (capacitor over bit-line)-DRAMs was degraded, only when TEOS (tetraethyl orthosilicate)-BPSG (boron phosphor silicate glass) film was used for the interlayer oxide, which was covered with the silicon nitride film. The measurement of Vfb (flat band voltage) of the capacitor indicated that there were the positive charges around the {SiO2}/{Si} interface, which made the substrate n-type. SIMS (Secondary Ion Mass Spectrometry) by detecting MCs + ions showed that the amount of piled-up carbon at the interface increased with increasing annealing temperature, and this increase was consistent with the Vfb shift. Therefore, the isolation degradation was considered to be caused by positive charges which were originated from piled-up carbon. The SIMS analysis also showed that the total amount of carbon in the oxide seemed to be unchanged by the heat treatment, indicating that residual organic compounds migrated from the TEOS-BPSG layer to the {SiO2}/{Si} interface during the heat treatment, since the silicon nitride layer prevented their out-diffusion.

  9. Diffusion of SiO2 in Rhyolitic Melt

    NASA Astrophysics Data System (ADS)

    Yu, Y.; Zhang, Y.; Yang, Y.

    2015-12-01

    SiO2 is the most major component in silicate melts, and the diffusion of SiO2 plays a controlling role in growth or dissolution of quartz from or into silicate melts. The diffusivity of SiO2 is small and highly dependent on melt compositions (Lesher and Walker, 1986; Koyaguchi, 1989), making it difficult to extract high-quality Si diffusivity data. We conducted quartz dissolution experiments in rhyolitic melt (0.1wt% H2O, 73 wt% SiO2) at 1300-1600 °C. We also have preliminary data on quartz dissolution in basaltic melt at 1300 °C , one quartz dissolution experiment (Zhang et al., 1989) in andesitic melt at 1300 °C , and five cassiterite dissolution experiments (Yang et al, in review) in various hydrous rhyolitic melts (containing 0.1-5.9 wt% H2O, and 74-77 wt% SiO2) at 900-1100 °C. All experiments were conducted at 0.5 GPa using piston cylinder apparatus. All data were combined to examine the dependence of DSiO2 on melt compositions. Though in individual experiments lnDSiO2 is a linear function of SiO2 concentration as shown in literature, the combined data show that lnDSiO2 decreases linearly with XSi+Al, where XSi+Al is defined as cation mole fraction of Si+Al in melts. By fitting concentration profiles at different temperatures using DSiO2 = D0 ea(1-XSi+Al), the results show that the parameter a is roughly composition-independent across all experiments and is linear to 1/T: a = 2.603(±0.451) + 35282(±627)/T, r2= 0.996. D0 is the extrapolated effective binary diffusivity of SiO2 in pure silica melt (XSi+Al = 1 roughly corresponds to XSi = 1 in quartz dissolution experiments). For quartz dissolution experiments in rhyolitic melt, the dependence of D0 on T is: lnD0 = -14.041(±1.915) - 34719(±3125)/T, r2= 0.875 For cassiterite dissolution, lnD0 values do not follow the above trend because the dominant SnO concentration gradient can affect interdiffusion between SiO2 and other components. That is, XSi+Al alone is not enough to account for how D0 depends on other components. The effect of H2O on both a and D0 is roughly accounted for by simply including H as a cation when calculating XSi+Al. Namely, adding H2O equals to lowering XSi+Al, e.g. at 1300°C, every addition of 1 wt% H2O (i.e. lowering XSi+Al by ~0.05) would increase DSiO2 by ~1.2 lnD units for a melt with initial XSi+Al = 0.85 on anhydrous basis.

  10. Extracting the Density of States of Copper Phthalocyanine at the SiO2 Interface with Electronic Sum Frequency Generation.

    PubMed

    Pandey, Ravindra; Moon, Aaron P; Bender, Jon A; Roberts, Sean T

    2016-03-17

    Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc's electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ.

  11. Lateral Si /SiO2 quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Rölver, R.; Berghoff, B.; Bätzner, D. L.; Spangenberg, B.; Kurz, H.

    2008-05-01

    The photovoltaic properties of Si /SiO2 multiple quantum wells (QWs) embedded in lateral Schottky contacts are investigated. The QWs were fabricated by remote plasma enhanced chemical vapor deposition. By subsequent rapid thermal annealing, the two-dimensional Si layers are partially recrystallized, which gives rise to distinct quantum confinement effects. Although the current extraction along the quantum layers is hampered by the incomplete recrystallization, the data collected define the route to optimized Si based QW solar cells.

  12. Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2.

    PubMed

    Chulapakorn, Thawatchart; Sychugov, Ilya; Saveda Suvanam, Sethu; Linnros, Jan; Primetzhofer, Daniel; Hallén, Anders

    2017-09-15

    The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si(+) and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

  13. Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2

    NASA Astrophysics Data System (ADS)

    Chulapakorn, Thawatchart; Sychugov, Ilya; Saveda Suvanam, Sethu; Linnros, Jan; Primetzhofer, Daniel; Hallén, Anders

    2017-09-01

    The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 1011-1014 cm-2 were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm-1. PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

  14. In situ synthesis and hydrothermal crystallization of nanoanatase TiO2 -SiO2 coating on aramid fabric (HTiSiAF) for UV protection.

    PubMed

    Deng, Hui; Zhang, Hongda

    2015-10-01

    TiO2 -SiO2 thin film was prepared by sol-gel method and coated on the aramid fabric to prepare functional textiles. The aramid fabric was dipped and withdrawn in TiO2 -SiO2 gel and hydrothermal crystallization at 80(°) C, then its UV protection functionality was evaluated. The crystalline phase and the surface morphology of TiO2 -SiO2 thin film were characterized using SEM, XRD, and AFM respectively. SEM showed hydrothermal crystallization led to a homogeneous dispersion of anatase nonocrystal in TiO2 -SiO2 film, and XRD suggested the mean particle size of the formed anatase TiO2 was less than 30 nm. AFM indicated that hydrothermal treatment enhanced the crystallization of TiO2 . UV protection analysis suggested that the hydrothermally treated coated textile had a better screening property in comparison with TiO2 -SiO2 gel and native aramid fabric. © 2015 Wiley Periodicals, Inc.

  15. Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators.

    PubMed

    Olivares, Jimena; Wegmann, Enrique; Capilla, José; Iborra, Enrique; Clement, Marta; Vergara, Lucía; Aigner, Robert

    2010-01-01

    In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator.

  16. Chemical-state-selective X-ray absorption spectroscopy by detecting bond-specific Auger electrons for SiO2/SiC interface

    NASA Astrophysics Data System (ADS)

    Isomura, Noritake; Murai, Takaaki; Oji, Hiroshi; Nomoto, Toyokazu; Watanabe, Yukihiko; Kimoto, Yasuji

    2017-08-01

    Chemical-state-selective Si K-edge extended X-ray absorption fine structure (EXAFS) measurements of SiO2 and SiC are demonstrated by detecting bond-specific Auger electrons in SiC coated with a very thin SiO2 film. Differential-electron-yield (DEY) mode is used for the measurements. Each EXAFS spectrum may be subject to the following two spectrally overlapping influences: (i) the background spectrum formed by energy-losing SiC Auger electrons overlaps the SiO2 Auger peak, and (ii) the resonant SiO2 Auger peak overlaps the SiC Auger peak. The SiO2- and SiC-selective DEY-EXAFS spectra differ from each other and are similar to the spectra of bulk SiO2 and SiC, respectively, in the EXAFS regions, indicating that the two influences are negligible, and that this method can be considered valid for selection of chemical states.

  17. Light-induced pH change and its application to solid phase extraction of trace heavy metals by high-magnetization Fe3O4@SiO2@TiO2 nanoparticles followed by inductively coupled plasma mass spectrometry detection.

    PubMed

    Zhang, Nan; Peng, Hanyong; Hu, Bin

    2012-05-30

    We report here the preparation of high-magnetization Fe(3)O(4)@SiO(2)@TiO(2) nanoparticles for solid phase extraction of trace amounts of Cd(II), Cr(III), Mn(II) and Cu(II) from environmental waters. The prepared nanoparticles were characterized by scanning electron micrograph (SEM) and transmission electron microscopy (TEM). The high-magnetization nanoparticles carrying the target metals could be easily and fast separated from the aqueous solution simply by applying an external magnetic field while no filtration or centrifugation was necessary. A light-induced hydroxide ion emitter, molecular malachite green carbinol base (MGCB) was applied to adjust pH value of solution for quantitative adsorption instead of the conventional used buffer. In the presence of UV light, MGCB gives out OH(-) ions, and this leads to an increase in the pH value without the aid of buffer solution. Using high-magnetization Fe(3)O(4)@SiO(2)@TiO(2) nanoparticles as the extraction material and the light-induced MGCB for pH adjustment, we developed an efficient and convenient two-step method for separation/preconcentration trace amounts of Cd(II), Cr(III), Mn(II) and Cu(II) in environmental water samples followed by inductively coupled plasma mass spectrometry (ICP-MS) detection. The parameters affecting the extraction such as MGCB concentration, exposal time, sample volume, eluent condition, and interfering ions have been investigated in detail. Under the optimized conditions, the limits of detection for Cd(II), Cr(III), Mn(II) and Cu(II) were 4.0, 2.6, 1.6 and 2.3 ng L(-1), respectively, and the relative standard deviations (RSDs, c=1 μg L(-1), n=7) were 3.6%, 4.5%, 4.0 and 4.1%, respectively. The proposed method has been validated using certified reference materials, and it has been successfully applied in the determination of trace Cd(II), Cr(III), Mn(II) and Cu(II) in environmental water samples. Copyright © 2012 Elsevier B.V. All rights reserved.

  18. Interfacial SiO2 scavenging kinetics in HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Li, Xiuyan; Nishimura, Tomonori; Toriumi, Akira

    2016-11-01

    In this paper, Si and oxygen diffusions as well as SiO2 reduction reaction in HfO2/SiO2/Si stacks are examined in detail for fully understanding the SiO2-IL scavenging process. A 29Si isotope tracing experiment confirms that Si in SiO2-IL is mostly emitted from the HfO2 surface. In addition, the reaction of oxygen from SiO2 with VO in HfO2 is suggested. Furthermore, it is reported that the Si substrate is not changed at all in the SiO2-IL scavenging by simultaneously comparing a Si surface between with and without scavenged parts. Based on these results, a kinetic model for the SiO2-IL scavenging in HfO2/SiO2/Si stacks is proposed.

  19. Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers

    NASA Astrophysics Data System (ADS)

    Sekhar Das, Sudhansu; Senthil Kumar, M.

    2017-03-01

    SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (1 1 0) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R\\text{hs}\\text{A} ) was observed upon reducing the t Fe from 300 to 50 Å. The maximum value of R\\text{hs}\\text{A}   =  2.3 Ω observed for t Fe  =  50 Å sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R\\text{hs}\\text{A} was observed in sandwiched Fe (50 Å) film. Scaling law suggests that the R s follows the longitudinal resistivity (ρ) as, {{R}\\text{s}}\\propto {ρ1.9} , suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.

  20. Molecular-orientation-induced rapid roughening and morphology transition in organic semiconductor thin-film growth.

    PubMed

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S

    2015-03-24

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals.

  1. Molecular-Orientation-Induced Rapid Roughening and Morphology Transition in Organic Semiconductor Thin-Film Growth

    PubMed Central

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S.

    2015-01-01

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals. PMID:25801646

  2. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces

    NASA Astrophysics Data System (ADS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-04-01

    Electrical dipole at SiO2/Si and HfO2/SiO2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO2/Si and HfO2/SiO2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO2 and a HfO2/SiO2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance–voltage (C–V) characteristics. Comparing the results of XPS and C–V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements.

  3. Characteristics of the Electromagnetic Wave Absorbers of Composites Made of Ni-Zn Ferrite and Isolated SiO2 Particles

    NASA Astrophysics Data System (ADS)

    Kusunoki, Hiroki; Hiraki, Kiyohiro; Kondo, Takatoshi; Takada, Kazushi; Yoshikado, Shinzo

    It is found from simulation study that electromagnetic wave absorbers made of composites of Ni-Zn ferrite and SiO2 particles, which are mutually isolated each other in the continuous medium of Ni-Zn ferrite, show absorption in the frequency region both below and above 1GHz. The spray method is proposed to fabricate such composites in this study. The thin films of Ni-Zn ferrite can be coated on the surface of SiO2 particles by the spray thin film deposition method. It is confirmed by XRD and the electromagnetic characteristics measurement. The measured complex permeability approached to the calculated result using the isolation model of SiO2 particles in the Ni-Zn ferrite medium than using Lichtenecker’s logarithm mixed low.

  4. Synthesis and characterization of plasmonic and magnetically separable Ag/AgCl-Bi2WO6@ Fe3O4@SiO2 core-shell composites for visible light-induced water detoxification.

    PubMed

    Meng, Xiangchao; Zhang, Zisheng

    2017-01-01

    A magnetic photocatalyst composite (Ag/AgCl-Bi2WO6) was proposed and investigated. Magnetic Bi2WO6 was hydrothermally loaded onto silica-coated Fe3O4 which was synthesized by coprecipitation in addition to a modified Stöber process. Ag nanoparticles were then photoreduced on the surface of Bi2WO6. The prepared samples were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and ultraviolet-visible light diffuse reflectance spectroscopy. Magnetic properties were investigated using a superconducting quantum interface magnetometer, with samples exhibiting quasi-superparamagnetic behaviour. The visible light-induced photocatalytic activities were evaluated by degrading a model dye, RhB, as well as a colourless aromatic organic compound, phenol. Samples found to possess an excellent performance in terms of detoxification. Pathways and mechanisms for the photocatalytic degradation of organic compounds in the presence of Ag/AgCl-(M) Bi2WO6 were also investigated and proposed. Copyright © 2016. Published by Elsevier Inc.

  5. Molecular dynamics of liquid SiO2 under high pressure

    NASA Technical Reports Server (NTRS)

    Rustad, James R.; Yuen, David A.; Spera, Frank J.

    1990-01-01

    The molecular dynamics of pure SiO2 liquids was investigated up to pressures of 20 GPa at 4000 K using 252, 498, 864, and 1371 particles. The results obtained suggest that the pressure-induced maxima in the self-diffusion coefficients of both oxygen and silicon are dependent on the system size. In the case of larger systems, the maximum decreases and shifts to lower pressures. Changes in the velocity autocorrelation function with increasing pressure are described. The populations of anomalously coordinated silicon and oxygen are then discussed as a function of pressure and system size.

  6. PECVD of nanostructured SiO2 in a modulated microwave plasma jet at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Hnilica, J.; Schäfer, J.; Foest, R.; Zajíčková, L.; Kudrle, V.

    2013-08-01

    Atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) of thin films by means of a microwave plasma jet operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS) is reported for the first time. In contrast to other siloxy-alkanes that are commonly used for PECVD, the molecule of TTMS (C12H36O4Si5) exhibits a complex and symmetric molecular structure which is presumably essential for a large scale nanostructuring of the films. Deposited films have been characterized by means of electron microscopy (SEM), x-ray spectroscopy (EDX), and infra-red spectroscopy (FTIR). The applied methods demonstrate the prevalent inorganic SiO2-like character of the films and their highly fractalized nanostructure over a wide range of dimension 100-104 nm. Contact angle measurements show the superhydrophobicity of the films, while the dispersive component of the surface energy can be varied in a controlled way by low-frequency amplitude modulation of the excitation power of the MW discharge. The modulation regimes of the jet have been investigated by means of time-resolved optical emission spectroscopy in order to describe the oscillations of plasma parameters e.g. rotational temperature from OH and relative emission of silicon atoms to substantiate the reproducibility of the deposition conditions and to correlate the plasma properties with the resulting film properties.

  7. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors.

  8. Investigation of bonding characteristics between Si quantum dots and a SiO2 matrix.

    PubMed

    Park, Youngbin; Kim, Shinho; Moon, Jihyun; Lee, Jung Chul; Kim, Yangdo

    2012-02-01

    In order to understand and control the properties of Si quantum dot (QD) superlattice structures (SLS), it is necessary to investigate the bonding between the dots and their matrix and also the structures' crystallinities. In this study, a SiOx matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si QD SLS were prepared by alternating deposition of Si rich SiOx (x = 0.8) and SiO2 layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and 1,100 degrees C under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Raman and FTIR spectra revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100 degrees C for 1 hour. TEM images clearly showed SRO/SiO2 SLS and Si QDs formation in SRO layers after annealing at 1,100 degrees C for 2 hours. XPS analysis showed that Si-Si and Si-O bonding changes occurred above 1,100 degrees C. XPS analysis also revealed that Si QD SLSs started stabilizing after 2 hours' annealing and approached completion after 3 hours'. The systematic investigation of Si QDs in SiO2 matrices and their properties for solar cell application are presented.

  9. Stress and environmental shift characteristics of HfO2/SiO2 multilayer coatings

    NASA Astrophysics Data System (ADS)

    Anzellotti, J. F.; Smith, Douglas J.; Sczupak, Robert J.; Chrzan, Z. Roman

    1997-05-01

    HfO2/SiO2 polarizer coatings for 1054 nm have been produced that have low stress at explicit environmental conditions without the employment of backside stress- compensation films. In this process hafnia is condensed from a metallic melt and silica from an oxide source, both via electron-beam evaporation. Specifically, this process has been adopted for multilayer designs with stringent requirements on spectral control and wavefront distortion. Efforts to meet these requirements have prompted various investigations of coating stress and spectral behavior, especially under changing environmental conditions. Results have shown that coating stress and optical thickness vary significantly with humidity. THese quantities have been measured under both ambient air and dry nitrogen atmospheres. The effects of coating parameters on stress and environmental stability have been examined for an experimental hafnia/silica polarizer coating. The aforementioned parameters are hafnia deposition rate, oxygen pressure during hafnia deposition, and oxygen pressure during silica deposition. Results indicate a strong correlation of coating stress to oxygen pressure during the silica evaporation. Data on the aging of stress in hafnia/silica coatings will also be presented. The HfO2/SiO2 process has ben utilized in high-laser-damage- threshold coatings for the OMEGA laser system and for National Ignition Facility development coatings at the Laboratory for Laser Energetics.

  10. Effect of relative humidity on the deposition and coagulation of aerosolized SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Wang, Youfeng; Chen, Lan; Chen, Rui; Tian, Guolan; Li, Dexing; Chen, Chunying; Ge, Xiujie; Ge, Guanglu

    2017-09-01

    The temporal evolution of aerosolized SiO2 nanoparticles (NPs) released into an environmental test chamber has been investigated to interrogate the effect of relative humidity (RH) on the deposition and coagulation of the nanoparticles. The size-resolved deposition rate and Brownian coagulation coefficient for the particles at RH of 10%, 27%, 40%, 54%, and 64% are estimated. The results show that the effect of RH on the deposition rate is size-dependent; for particle diameter (Dp) < 70 nm, the deposition rate reduces as the RH rises; while for Dp > 70 nm, it grows as the RH rises. Generally, both low and high RH tends to enhance the deposition rate, and the minimum rate appears at moderate RH ( 54%). Electrostatic repulsion is probable for the inter-particles interaction at the low RH while the surface roughness due to water molecular adsorption is a main reason for the particle-wall interaction at higher RH. The increasing coagulation coefficient at high humidity correlates to the strong inter-particle adhesion, which may be caused by the water molecular adsorption on the hydrophilic surfaces of the SiO2 NPs due to the formation of nanometer-thick water film. This study suggests that air humidity plays unignorable roles in particle deposition and coagulation.

  11. SiO 2: chlorophyll gels under 4He irradiation

    NASA Astrophysics Data System (ADS)

    Rickards, J.; García, J. M.; García, M. R.; Ramírez, E.; López, K.

    1997-05-01

    SiO 2 gels doped with chlorophyll extracted from natural leaves were exposed to different fluences of a 3-MeV 4He beam from the Instituto de Física Pelletron Accelerator. Optical absorption, emission and excitation spectra were measured as a function of fluence in the interval (0-2.5) × 10 14 cm -2. Slight increases in both emission and excitation spectra at small fluences were observed. For larger fluences a characteristic exponential-type decay was produced due to degradation of the organic molecules. The data were fitted with a Lorentzian curve. A discussion of possible mechanisms is given in terms of the irradiation parameters.

  12. Wetting properties of phospholipid dispersion on tunable hydrophobic SiO2-glass plates.

    PubMed

    Alexandrova, Lidia; Karakashev, Stoyan I; Grigorov, L; Phan, Chi M; Smoukov, Stoyan K

    2015-06-01

    We study the wetting properties of very small droplets of salty aqueous suspensions of unilamellar liposomes of DMPC (dimyristoylphosphatidylcholine), situated on SiO2-glass surfaces with different levels of hydrophobicity. We evaluated two different measures of hydrophobicity of solid surfaces - receding contact angles and the thickness of wetting films trapped between an air bubble and the solid surface at different levels of hydrophobicity. We established a good correlation between methods which differ significantly in measurement difficulty and experimental setup. We also reveal details of the mechanism of wetting of different surfaces by the DMPC liposome suspension. Hydrophilic surfaces with water contact angles in the range of 0° to 35° are readily hydrophobized by the liposomes and only showed corresponding contact angles in the range 27°-43°. For same range of surface hydrophobicities, there was a clear reduction of the thickness of the wetting films between the surface and a bubble, reaching a minimum in the 35°-40° range. At higher levels of hydrophobicity both pure water and the liposome suspension show similar contact angles, and the thickness of wetting films between a bubble and those surfaces increases in parallel. Our analysis showed that the only force able to stabilize the film under these experimental conditions is steric repulsion. The latter suggests that nanobubbles adsorbed on hydrophobic parts of the surface, and coated with a DMPC layer, may be the cause of the 40-70 nm thickness of wetting films we observe.

  13. Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method

    NASA Astrophysics Data System (ADS)

    Wee, Terence C.; Ooi, Boon Siew; Zhou, Yan; Chan, Yuen Chuen; Lam, Yee Loy

    1999-11-01

    SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

  14. In vitro cytotoxicity of SiO2 or ZnO nanoparticles with different sizes and surface charges on U373MG human glioblastoma cells

    PubMed Central

    Kim, Jung-Eun; Kim, Hyejin; An, Seong Soo A; Maeng, Eun Ho; Kim, Meyoung-Kon; Song, Yoon-Jae

    2014-01-01

    Silicon dioxide (SiO2) and zinc oxide (ZnO) nanoparticles are widely used in various applications, raising issues regarding the possible adverse effects of these metal oxide nanoparticles on human cells. In this study, we determined the cytotoxic effects of differently charged SiO2 and ZnO nanoparticles, with mean sizes of either 100 or 20 nm, on the U373MG human glioblastoma cell line. The overall cytotoxicity of ZnO nanoparticles against U373MG cells was significantly higher than that of SiO2 nanoparticles. Neither the size nor the surface charge of the ZnO nanoparticles affected their cytotoxicity against U373MG cells. The 20 nm SiO2 nanoparticles were more toxic than the 100 nm nanoparticles against U373MG cells, but the surface charge had little or no effect on their cytotoxicity. Both SiO2 and ZnO nanoparticles activated caspase-3 and induced DNA fragmentation in U373MG cells, suggesting the induction of apoptosis. Thus, SiO2 and ZnO nanoparticles appear to exert cytotoxic effects against U373MG cells, possibly via apoptosis. PMID:25565841

  15. The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol

    NASA Astrophysics Data System (ADS)

    Yan, Li; Yuling, Liu; Aochen, Wang; Zhixin, Yang; Mingbin, Sun; Chuan, Cheng; Yufeng, Zhang; Nannan, Zhang

    2014-06-01

    There is a lot of hydroxyl on the surface of nano SiO2 sol used as an abrasive in the chemical mechanical planarization (CMP) process, and the chemical reaction activity of the hydroxyl is very strong due to the nano effect. In addition to providing a mechanical polishing effect, SiO2 sol is also directly involved in the chemical reaction. The stability of SiO2 sol was characterized through particle size distribution, zeta potential, viscosity, surface charge and other parameters in order to ensure that the chemical reaction rate in the CMP process, and the surface state of the copper film after CMP was not affected by the SiO2 sol. Polarization curves and corrosion potential of different concentrations of SiO2 sol showed that trace SiO2 sol can effectively weaken the passivation film thickness. In other words, SiO2 sol accelerated the decomposition rate of passive film. It was confirmed that the SiO2 sol as reactant had been involved in the CMP process of copper film as reactant by the effect of trace SiO2 sol on the removal rate of copper film in the CMP process under different conditions. In the CMP process, a small amount of SiO2 sol can drastically alter the chemical reaction rate of the copper film, therefore, the possibility that Cu/SiO2 as a catalytic system catalytically accelerated the chemical reaction in the CMP process was proposed. According to the van't Hoff isotherm formula and the characteristics of a catalyst which only changes the chemical reaction rate with out changing the total reaction standard Gibbs free energy, factors affecting the Cu/SiO2 catalytic reaction were derived from the decomposition rate of Cu (OH)2 and the pH value of the system, and then it was concluded that the CuSiO3 as intermediates of Cu/SiO2 catalytic reaction accelerated the chemical reaction rate in the CMP process. It was confirmed that the Cu/SiO2 catalytic system generated the intermediate of the catalytic reaction (CuSiO3) in the CMP process through the removal

  16. X-ray photoelectron spectroscopic analysis of Si nanoclusters in SiO2 matrix.

    PubMed

    Dane, Aykutlu; Demirok, U Korcan; Aydinli, Atilla; Suzer, Sefik

    2006-01-26

    We investigated silicon nanoclusters Si(nc) in a SiO2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.

  17. Avalanches in compressed porous SiO(2)-based materials.

    PubMed

    Nataf, Guillaume F; Castillo-Villa, Pedro O; Baró, Jordi; Illa, Xavier; Vives, Eduard; Planes, Antoni; Salje, Ekhard K H

    2014-08-01

    The failure dynamics in SiO(2)-based porous materials under compression, namely the synthetic glass Gelsil and three natural sandstones, has been studied for slowly increasing compressive uniaxial stress with rates between 0.2 and 2.8 kPa/s. The measured collapsed dynamics is similar to Vycor, which is another synthetic porous SiO(2) glass similar to Gelsil but with a different porous mesostructure. Compression occurs by jerks of strain release and a major collapse at the failure point. The acoustic emission and shrinking of the samples during jerks are measured and analyzed. The energy of acoustic emission events, its duration, and waiting times between events show that the failure process follows avalanche criticality with power law statistics over ca. 4 decades with a power law exponent ɛ≃ 1.4 for the energy distribution. This exponent is consistent with the mean-field value for the collapse of granular media. Besides the absence of length, energy, and time scales, we demonstrate the existence of aftershock correlations during the failure process.

  18. Defect Dynamics in the Network Glass SiO2

    NASA Astrophysics Data System (ADS)

    Vollmayr-Lee, Katharina; Zippelius, Annette

    2014-03-01

    We study the dynamics of the strong glass former SiO2 via molecular dynamics simulations below the glass transition temperature. To focus on microscopic processes, we average single particle trajectories over time windows of about 100 particle oscillations. The structure on this coarse-grained time scale is very well defined in terms of coordination numbers, allowing us to identify ill-coordinated atoms, called defects in the following. The most numerous defects are O-O neighbors, whose lifetimes are comparable to the equilibration time at low temperature. On the other hand SiO and OSi defects are very rare and short lived. The lifetime of defects is found to be strongly temperature dependent, consistent with activated processes. Single-particle jumps give rise to local structural rearrangements. We show that in SiO2 these structural rearrangements are coupled to the creation or annihilation of defects, giving rise to very strong correlations of jumping atoms and defects. This project was funded by the Deutsche Forschungsgemeinschaft via SFB 602 and FOR 1394.

  19. Bacterial adherence to SiO2-based multifunctional bioceramics.

    PubMed

    Kinnari, Teemu J; Esteban, Jaime; Gomez-Barrena, Enrique; Zamora, Nieves; Fernandez-Roblas, Ricardo; Nieto, Alejandra; Doadrio, Juan C; López-Noriega, Adolfo; Ruiz-Hernández, Eduardo; Arcos, Daniel; Vallet-Regí, María

    2009-04-01

    The bacterial adherence onto different multifunctional silica-based bioceramics has been evaluated. Staphylococcus aureus and Staphylococcus epidermidis were chosen, as they cause the majority of the implant-related infections in this field. Two SiO2 mesoporous materials (MCM-41, SBA-15), an ordered SiO2-CaO-P2O5 mesoporous glass (OMG), and a biphasic magnetic bioceramic (BMB), were incubated with S. aureus and S. epidermidis for 90 min, and subsequently sonicated to quantify the number of adhered bacteria on each material. It was found that S. aureus and S. epidermidis (10(8) CFU/mL) adhered significantly less to BMB samples when compared to MCM-41, SBA-15, or OMG. However, when the material pores accessible for bacteria in each material were taken into account, the lowest bacterial adherence was found in MCM-41, and the highest in SBA-15. The results show that bacterial adherence is higher on mesoporous bioceramics, although this higher microbial attachment is mainly due to the intergranular porosity and grain size morphology rather than to the mesoporous structure.

  20. Additivity of kinetic and potential energy contributions in modification of graphene supported on SiO2

    NASA Astrophysics Data System (ADS)

    Zhang, Xitong; Zhao, Shijun; Wang, Yuyu; Xue, Jianming

    2017-04-01

    The damage production induced by MeV highly charged ions (HCI) irradiations in graphene supported on a SiO2 substrate is investigated using molecular dynamics method. We get results in agreement with our recent experiments. We find that the electronic energy loss and potential energy deposition have similar effects on the defects creation in SiO2 substrate-supported graphene and both mechanisms of energy deposition seem to contribute in an additive way. The influences of the energy deposition depth and radius are studied. Only the energy deposited below the surface within 2.5 nm will induce the damage in graphene. Hence, the HCI can be a powerful tool to induce defects in graphene without causing deep damage of the substrate. When charge of incident Xeq+ is above 30, a nanopore is formed and the size of nanopore in graphene can be controlled by changing the incident charge state.

  1. Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications

    DTIC Science & Technology

    2013-04-05

    electrical conductivity. Germanium has the elec- trical conductivity of 2.17 (S m 1) at about room temperature (Griffiths, 1999 [1981]; Serway , 1998). The bulk...electrical conductivity of the fused silica is also given as 1.3 3 10 18 S m 1 ( Serway , 1998). The electrical conductivity which we calculated from...Nuclear Instruments & Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 257: 30 32. Serway RA (1998) Principles of

  2. Engineered magnetic core-shell SiO2/Fe microspheres and "medusa-like" microspheres of SiO2/iron oxide/carbon nanofibers or nanotubes.

    PubMed

    Mero, On; Sougrati, Moulay-Tahar; Jumas, Jean-Claude; Margel, Shlomo

    2014-08-19

    Iron oxide (IO) thin coatings of controlled thickness on SiO2 microspheres of narrow size distribution were prepared by decomposition at 160 °C of triiron dodecacarbonyl onto silica microspheres dispersed in diethylene glycol diethyl ether free of surfactant or stabilizer. The dried washed SiO2/IO core-shell microspheres were annealed at different temperatures and time periods under inert (Ar) or reducing (H2) atmosphere. The effect of temperature on the chemical composition, morphology, crystallinity, and magnetic properties of the IO and the elemental Fe nanoparticles type coatings onto the SiO2 core microspheres has been elucidated. "Medusa-like" SiO2/IO/carbon nanofibers and tubes particles were prepared by CVD of ethylene on the surface of the SiO2/IO microspheres at different temperatures. The morphology change of the grafted carbon nanofibers and tubes as a function of the CVD temperature was also elucidated.

  3. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    NASA Astrophysics Data System (ADS)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  4. Local Electrochemical Deposition of Thorium on SiO2/Si(111) Surface

    NASA Astrophysics Data System (ADS)

    Troyan, V. I.; Borisyuk, P. V.; Lebedinskii, Yu. Yu.; Vasiliev, O. S.

    The paper presents the results of the study of local formation of thorium oxide coatings on SiO2/Si(111) surface by electrochemical deposition. It was found that the electrochemical deposition of thorium atoms from thorium nitrate solution of Th(NO3)4 with the presence of water on silicon surface results in local formation of thorium compounds. The results of surface analysis by local XPS indicate that these compounds represent a thorium-, silicon-, oxygen- and carbon-based compounds. After 6 hours annealing at 600 °C at atmosphere carbon pulled completely, and the cluster formed film consists of oxygen and thorium only. It was shown that this system can be promising for further research of nuclear low-lying isomeric transition in 229Th isotope when irradiated by an electron beam.

  5. Niobium oxide dispersed on a carbon-ceramic matrix, SiO2/C/Nb2O5, used as an electrochemical ascorbic acid sensor.

    PubMed

    Arenas, Leliz T; Villis, Paulo C M; Arguello, Jacqueline; Landers, Richard; Benvenutti, Edilson V; Gushikem, Yoshitaka

    2010-11-15

    A film of niobium oxide was immobilized on a SiO(2)/C carbon-ceramic matrix (specific surface area 270 m(2)g(-1)) and characterized by N(2) adsorption-desorption isotherms, scanning electron microscopy, X-ray photoelectron spectroscopy and atomic force microscopy. This new carbon-ceramic material, SiO(2)/C/Nb(2)O(5), was used for construction of electrodes, and it shows ability to improve the electron-transfer between the electrode surface and ascorbic acid. The electrocatalytic oxidation of ascorbic acid was made by differential pulse and cyclic voltammetry techniques, making it potentially useful for developing a new ascorbic acid sensor.

  6. Effects of optical design modifications on thermal performance of a highly reflective HfO2/SiO2/TiO2 three material coating

    NASA Astrophysics Data System (ADS)

    Ocak, M.; Sert, C.; Okutucu-Özyurt, T.

    2017-08-01

    Effects of layer thickness modifications on laser induced temperature distribution inside three material, highly reflective thin film coatings are studied with numerical simulations. As a base design, a 21 layer coating composed of HfO2, SiO2 and TiO2 layers of quarter wave thickness is considered. First, the laser induced temperature distribution in this base design is obtained. Then the layer thicknesses of the base design are modified and the corresponding temperature distributions in four alternative non-quarter wave coatings are evaluated. The modified thicknesses are determined using an in-house code developed to shift the electric field intensity (EFI) peak from the first high/low layer interface towards the adjacent low index layer that has a higher thermal conductivity, hence, higher laser damage resistance. Meanwhile, the induced increase in the EFI peak is kept at a user defined upper limit. The laser endurance of the base and alternative designs are compared in terms of their estimated temperature distributions. The results indicated that both the peak temperature and the highest interface temperature are decreased by at least 32%, in non-dimensional form, when alternative designs are used instead of the base design. The total reflection of the base design is only decreased from 99.8% to at most 99.4% when alternative designs are used. The study is proved to be successful in improving the laser endurance of three material thin film coatings by lowering the peak and interface temperatures.

  7. Close-packed SiO 2/poly(methyl methacrylate) binary nanoparticles-coated polyethylene separators for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Park, Jang-Hoon; Cho, Joo-Hyun; Park, Woong; Ryoo, Dongjo; Yoon, Su-Jin; Kim, Jong Hun; Jeong, Yeon Uk; Lee, Sang-Young

    In an endeavour to improve not only the thermal shrinkage but also the electrochemical performance of separators in lithium-ion batteries, a novel composite separator is developed, i.e., a close-packed SiO 2/poly(methyl methacrylate) (PMMA) binary nanoparticles-coated polyethylene (PE) separator. The introduction of SiO 2 nanoparticles to the coating layer effectively suppresses thermal shrinkage of the composite separator. In contrast to a SiO 2/PMMA coating layer having a film-shaped PMMA binder, the SiO 2/PMMA binary nanoparticle coating layer employs PMMA particles as a binder. As a consequence, a highly porous structure, i.e., well-connected interstitial voids, is formed between the binary SiO 2 and PMMA nanoparticles. The unique porous morphology allows favourable liquid electrolyte wettability and facile ionic conduction, which play a crucial role in improving cell performance such as the discharge capacity and the C-rate capability of the composite separator.

  8. Effect of Different TiO2-SiO2 Multilayer Coatings Applied by Sol-Gel Method on Antireflective Property

    NASA Astrophysics Data System (ADS)

    lari, Najme; Ahangarani, Shahrokh; Shanaghi, Ali

    2015-07-01

    Multilayer thin films prepared using the sol-gel process have been used in many antireflection applications. In this paper, antireflective nanoscale multilayer TiO2-SiO2 coatings were formed on both sides of the glass substrates by combining sol-gel method and dip coating techniques. The coatings were carried out using tetraethyl orthosilicate as precursor for SiO2 and tetrabutyl orthotitanate as precursor for TiO2. The coatings prepared in this work were characterized using scanning electron microscope, Fourier-transformed infrared spectrophotometer and UV-Visible spectrophotometer. The SiO2 top layer coatings showed excellent antireflection in the wavelength range of 400-800 nm where the transmittance of glass substrate is significantly lower. By increasing the number of double TiO2-SiO2 layers, the transmission of the coated glasses increased due to applied multilayer coating properties. Six-layer sol-gel TiO2-SiO2 coatings showed the highest visible transmittance about 99.25% at the band of 550-650 nm.

  9. Observation of electron trapping along scratches on SiO2 surface in mirror electron microscope images under ultraviolet light irradiation

    NASA Astrophysics Data System (ADS)

    Hasegawa, Masaki; Shimakura, Tomokazu

    2010-04-01

    Surface charge distribution change caused by electrons trapped at defects of a SiO2 surface has been observed by using a mirror electron microscope (MEM) under monochromatized ultraviolet (UV) light irradiation. Scratches on the SiO2 surface on a silicon wafer were formed by mechanically polishing to create spatially distributed defects on the SiO2 surface. Exposure of the SiO2 surface by UV light with energy above 4.25 eV, which is the threshold energy for internal photoemission from silicon to SiO2, produced significant change in the contrast in the MEM images. This contrast change is mainly due to negative charging by the photoexcited electrons trapped at the defects along the scratches. The negative charging changes the curvature of the electrostatic equipotential surface above the scratches from a concave shape to a convex shape; as a result, their contrast in the MEM image becomes reversed. The surface density of the trapped electrons at a typical scratch was roughly estimated to be 1010 cm-2. This result of analysis of the contrast change shows that the MEM can be used for spatially resolved and spectroscopic characterizations of defects relating charge trapping in insulator films in conjunction with a charge-injection technique such as UV irradiation.

  10. Direct fabrication of hybrid nanofibres composed of SiO2-PMMA nanospheres via electrospinning.

    PubMed

    Zhang, Ran; Shang, Tinghua; Yang, Guang; Jia, Xiaolong; Cai, Qing; Yang, Xiaoping

    2016-08-01

    The direct fabrication of hybrid nanofibres composed of poly(methyl methacrylate)-grafted SiO2 (SiO2-PMMA) nanospheres via electrospinning was investigated in detail. SiO2-PMMA nanospheres were successfully prepared, with the SiO2 nanospheres synthesized via the Stober method, followed by in situ surface-initiated atom transfer radical polymerization of methyl methacrylate (MMA). Electrospinning was carried out with N,N-dimethylformamide (DMF) as the solvent to disperse SiO2-PMMA nanospheres. The size of the SiO2 core, the molecular weight of the PMMA shell and the concentration of the SiO2-PMMA/DMF solution all had substantial effects on the morphology and structure of electrospun nanofibres composed of SiO2-PMMA nanospheres. When these determining factors were well-tailored, it was found that one-dimensional necklace-like nanofibres were obtained, with SiO2-PMMA nanospheres aligned one by one along the fibre. The successful fabrication of nanofibres by directly electrospinning the SiO2-PMMA/DMF solution verified that polymer-grafted particles possess polymer-like characteristics, which endowed them with the ability to be processed into desirable shapes and structures.

  11. Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

    NASA Astrophysics Data System (ADS)

    de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

    2017-05-01

    Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

  12. Environment assisted photoconversion of luminescent surface defects in SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Spallino, Luisa; Spera, Monia; Vaccaro, Lavinia; Agnello, Simonpietro; Gelardi, Franco M.; Zatsepin, Anatoly F.; Cannas, Marco

    2017-10-01

    Time-resolved photoluminescence investigation on SiO2 nanoparticles was carried out in controlled atmosphere, with the aim to discern the effects induced on the typical blue luminescence band by high power UV Nd:YAG laser photons (4.66 eV) and by some selected molecular species of the air (O2, N2, CO2, H2O). These factors ultimately determine both the brightness and photostability of the emitting defect, so as to limit the unique and attracting potentialities offered by this system in many applicative fields. Here it is highlighted that the effects due to photons and molecules, singularly considered, are not additive, the radiation being more dramatic in reducing the emission efficiency. Moreover, by analyzing the kinetics to convert the defects in a non-luminescent configuration both by the direct (photon-defect) and indirect (photon-molecule-defect) interactions, the threshold bleaching fluence is derived, ranging between 5000 J/cm2 (in a vacuum) and 60 J/cm2 (in air). These results indicate that an outstanding enhancement of the defect photostability is gained by passing from ambient atmosphere to vacuum condition, leading to foresee an immediate and relevant improvement in the field of the single-emitter spectroscopy based on the visible emission of SiO2 nanoparticles.

  13. Silicon (100)/SiO2 by XPS

    SciTech Connect

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  14. XPS study of interface formation of CVD SiO2 on InSb. [X-ray Photoemission Spectroscopy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-01-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  15. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    NASA Astrophysics Data System (ADS)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  16. Mechanism of Highly Selective SiO2 Etching over Si using New Alternative Gas, C5HF7

    NASA Astrophysics Data System (ADS)

    Miyawaki, Yudai; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru; Yamazaki, Atsuyo; Ito, Azumi; Matsumoto, Hirokazu

    2011-10-01

    Highly selective etching of oxide for a high aspect ratio contact hole formation is important technologies of IC fabrications. To realize an extreme high etch performances for the future devices, it is important to control the plasma chemistry based on the feedstock gas selection and internal parameters of the plasma. We achieved that highly selective etching of SiO2 against Si using a newly-designed gas, C5HF7, O2, and Ar gas mixture employed a dual frequency capacitively coupled plasma (CCP). For the conventional C5F8/O2/Ar plasma, the SiO2 etch rate and maximum selectivity were 453 nm/min and 9.4. In contrast, for the newly developed C5HF7/O2/Ar plasma, the maximum selectivity of 57.3 with the etch rate of 445 nm/min was obtained. Gas phase diagnostics were conducted for understanding the plasma chemistries. It was found the density of F radical (Si etchant) in C5HF7 plasma was lower than that of C5F8 plasma and appreciable amount of H containing species exist in C5HF7 plasma. It is considered F content in the CF film on Si was reduced by the H containing species and lower F radical supply, and then the Si etching was prevented. Consequently, C5HF7/O2/Ar chemistry has a great potential for highly selective SiO2 etching over Si.

  17. Origin and removal of stacking faults in Ge islands nucleated on Si within nanoscale openings in SiO2

    NASA Astrophysics Data System (ADS)

    Leonhardt, Darin; Ghosh, Swapnadip; Han, Sang M.

    2011-10-01

    We have previously reported that Ge films formed after nucleation of Ge islands within nanometer size openings in SiO2 and their subsequent coalescence over the SiO2 template exhibit threading dislocation densities below 106 cm-2. However, these films contain a density of twin/stacking fault defects on the order of 5 × 1010 cm-2 that emanate primarily from the Ge-SiO2 interface. Most of these faults self-terminate within 200 nm of the interface; however, a total of 5 × 107 cm-2 propagate to the Ge surface. These defects are found to be detrimental to the morphology and minority carrier lifetime in III-V films integrated onto the Ge-on-Si virtual substrates. We have found that annealing the Ge islands during the initial stage of coalescence eliminates stacking faults, but further Ge growth leads to a film containing a threading dislocation density of 5 × 107 cm-2. To explain the origin of the twin/stacking fault defects in the Ge films and their removal after annealing Ge islands, we have studied the Ge islands before and after annealing. Our results indicate that twin/stacking faults originate from Ge islands that nucleate within nanoscale windows in the SiO2 template, in twin relationship to the underlying Si, and their coalescence with other epitaxial Ge islands. The density of Ge islands in twin relationship is approximately 4 × 1010 cm-2. In addition to the twin-oriented Ge islands, we observe that another group of Ge islands on the order of 2 × 1010 cm-2 have a small tilt-misorientation to the underlying Si ranging from 1.8 to 5.6°. After annealing, the density of both epitaxial and twin-oriented Ge islands is significantly reduced, and only the tilt-misoriented islands remain. The reduction in epitaxial and twin-oriented Ge islands stems from the thermal desorption of SiO2 template during the annealing, which leads to the transfer of Ge by surface diffusion from these Ge islands to the freshly exposed Si. This surface diffusion, while causing

  18. In vitro and in vivo genotoxicity investigations of differently sized amorphous SiO2 nanomaterials.

    PubMed

    Maser, Elena; Schulz, Markus; Sauer, Ursula G; Wiemann, Martin; Ma-Hock, Lan; Wohlleben, Wendel; Hartwig, Andrea; Landsiedel, Robert

    2015-12-01

    In vitro and in vivo genotoxic effects of differently sized amorphous SiO2 nanomaterials were investigated. In the alkaline Comet assay (with V79 cells), non-cytotoxic concentrations of 300 and 100-300μg/mL 15nm-SiO2 and 55nm-SiO2, respectively, relevant (at least 2-fold relative to the negative control) DNA damage. In the Alkaline unwinding assay (with V79 cells), only 15nm-SiO2 significantly increased DNA strand breaks (and only at 100μg/mL), whereas neither nanomaterial (up to 300μg/mL) increased Fpg (Formamidopyrimidine DNA glycosylase)-sensitive sites reflecting oxidative DNA base modifications. In the Comet assay using rat precision-cut lung slices, 15nm-SiO2 and 55nm-SiO2 induced significant DNA damage at ≥100μg/mL. In the Alkaline unwinding assay (with A549 cells), 30nm-SiO2 and 55nm-SiO2 (with larger primary particle size (PPS)) induced significant increases in DNA strand breaks at ≥50μg/mL, whereas 9nm-SiO2 and 15nm-SiO2 (with smaller PPS) induced significant DNA damage at higher concentrations. These two amorphous SiO2 also increased Fpg-sensitive sites (significant at 100μg/mL). In vivo, within 3 days after single intratracheal instillation of 360μg, neither 15nm-SiO2 nor 55nm-SiO2 caused genotoxic effects in the rat lung or in the bone marrow. However, pulmonary inflammation was observed in both test groups with findings being more pronounced upon treatment with 15nm-SiO2 than with 55nm-SiO2. Taken together, the study shows that colloidal amorphous SiO2 with different particle sizes may induce genotoxic effects in lung cells in vitro at comparatively high concentrations. However, the same materials elicited no genotoxic effects in the rat lung even though pronounced pulmonary inflammation evolved. This may be explained by the fact that a considerably lower dose reached the target cells in vivo than in vitro. Additionally, the different time points of investigation may provide more time for DNA damage repair after instillation.

  19. Friction force of smooth surfaces of SiO 2-SiO 2 as a function of residual pressure

    NASA Astrophysics Data System (ADS)

    Deulin, E. A.; Gatsenko, A. A.; Loginov, B. A.

    1999-08-01

    Experiments were carried out to study aspects of the dry friction of 'smooth' surfaces of silicon monocrystal wafers covered with SiO 2 over a wide range of residual pressure from 10 5 to 10 -8 Pa. The experiments show that a plot of the dynamic friction coefficient, fd, versus residual pressure, P, for smooth surfaces is more complex than the same for 'traditional' surfaces and confirm the existence of four ranges of pressure with different behavior of fd in each: (1) surface tension, (2) quasi-viscous, (3) adhesive and (4) cohesive friction. The behavior of fd in the pressure range P=10 -2-10 -9 Pa ensures the basis of the criterion of the extremely high vacuum (EHV) formulation. The friction coefficient fd decreases with pressure in the ultrahigh vacuum (UHV) range P=10 -2-10 -7 Pa and increases in the pressure range P<10 -7 Pa (UHV).

  20. [Effect of PEG400 on the luminescent Eu(BA)3/SiO2].

    PubMed

    Zeng, Dong-ming; Li, Yan-hua; Fu, Chang-cheng; Liu, You-nian; Shu, Wan-gen

    2007-02-01

    Rare earth organic complexes combined with inorganic compounds can enhanced thermal stability, but inorganic compounds matrix has great influence on the luminescence characteristic of rare earth organic complexes. The luminescence characteristic of organic and inorganic compound material was improved by PEG doping in the material. Eu(BA)3/SiO2 and Eu(BA)3/PEG400-SiO2 were synthesized by Sol-Gel method. The result of luminescence analysis showed that the excitation spectra and emission spectra of Eu(BA)3 accorded with those of Eu(BA)3/SiO2 and Eu(BA)3/PEG400-SiO2, but the luminescence intensity of Eu(BA)3/SiO2 was improved by PEG400-SiO2 in SiO2 gel. This was because PEG400 as a hard Lewis base, could be combined with rare earth ion and increase the luminescence intensity of Eu(BA)3. It was shown that the amount of PEG400 in Eu(BA)3/SiO2 had influence on luminescence intensity of Eu(BA)3, namely there was better luminescence intensity in Eu(BA)3/SiO2 with increment of the PEG400 addition, but when the amount of PEG400 exceeded 50 wt% of that of SiO2, the luminescence intensity of Eu(BA)3 hardly increased. When the amount of PEG400 exceed 15 wt% of that of SiO2, PEG400 had little influence on the content of water and hydroxy in the matrix, as verified by IR spectrum. The surface characteristic of SiO2 gel was investigated by atomic force microscopy (AFM).

  1. Fabrication of channel waveguides from sol-gel-processed polyvinylpyrrolidone/ SiO(2) composite materials.

    PubMed

    Yoshida, M; Prasad, P N

    1996-03-20

    Sol-gel-processed composite materials of polyvinylpyrrolidone (PVP) and SiO(2) were studied for optical waveguide applications. PVP is a polymer that can be crosslinked, so it is expected to have high thermal stability after crosslinking. However, thermal crosslinking and thermal decomposition of pure PVP take place around the same temperature, 200 °C, therefore pure PVP had a high optical propagation loss as a result of the absorption of the decomposed molecules after crosslinking. The incorporation of sol-gel-processed SiO(2) prevented the thermal decomposition of PVP and provided remarkably low optical propagation losses. The PVP/SiO(2)composite material also produced thick (>2-µm) crack-free films when the PVP concentration was 50% or higher. An optical propagation loss of 0.2 dB/cm was achieved at 633 nm in the 50% PVP/SiO(2) composite planar waveguide. Several aspects of the thermal stability of the waveguides were evaluated. The slab waveguide was then used for fabrication of channel waveguides with a selective laser-densification technique. This technique used metal lines fabricated with photolithography on the slab waveguide as a light absorbent, and these metal lines were heated by an Ar laser. The resultant channel waveguide had an optical propagation loss of 0.9 dB/ cm at 633 nm. This technique provides lower absorption loss and scattering loss compared with the direct laser-densification technique, which uses UV lasers, and produces narrow waveguides that are difficult to fabricate with a CO(2) laser.

  2. Synthesis and catalytic performance of SiO2@Ni and hollow Ni microspheres

    NASA Astrophysics Data System (ADS)

    Liu, Xin; Liu, Yanhua; Shi, Xueting; Yu, Zhengyang; Feng, Libang

    2016-11-01

    Nickel (Ni) catalyst has been widely used in catalytic reducing reactions such as catalytic hydrogenation of organic compounds and catalytic reduction of organic dyes. However, the catalytic efficiency of pure Ni is low. In order to improve the catalytic performance, Ni nanoparticle-loaded microspheres can be developed. In this study, we have prepared Ni nanoparticle-loaded microspheres (SiO2@Ni) and hollow Ni microspheres using two-step method. SiO2@Ni microspheres with raspberry-like morphology and core-shell structure are synthesized successfully using SiO2 microsphere as a template and Ni2+ ions are adsorbed onto SiO2 surfaces via electrostatic interaction and then reduced and deposited on surfaces of SiO2 microspheres. Next, the SiO2 cores are removed by NaOH etching and the hollow Ni microspheres are prepared. The NaOH etching time does no have much influence on the crystal structure, shape, and surface morphology of SiO2@Ni; however, it can change the phase composition evidently. The hollow Ni microspheres are obtained when the NaOH etching time reaches 10 h and above. The as-synthesized SiO2@Ni microspheres exhibit much higher catalytic performance than the hollow Ni microspheres and pure Ni nanoparticles in the catalytic reduction of methylene blue. Meanwhile, the SiO2@Ni catalyst has high stability and hence it can be recycled for reuse.

  3. High-fidelity conformation of graphene to SiO2 topographic features.

    PubMed

    Cullen, W G; Yamamoto, M; Burson, K M; Chen, J H; Jang, C; Li, L; Fuhrer, M S; Williams, E D

    2010-11-19

    High-resolution noncontact atomic force microscopy of SiO2 reveals previously unresolved roughness at the few-nm length scale, and scanning tunneling microscopy of graphene on SiO2 shows graphene to be slightly smoother than the supporting SiO2 substrate. A quantitative energetic analysis explains the observed roughness of graphene on SiO2 as extrinsic, and a natural result of highly conformal adhesion. Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.

  4. Highly efficient photoluminescence of SiO2 and Ce-SiO2 microfibres and microspheres.

    PubMed

    Ruso, Juan M; Gravina, A Noel; D'Elía, Noelia L; Messina, Paula V

    2013-06-14

    Semiconductor nanocrystals and nanostructures have been extensively studied in the last few years due to their interesting optical and optoelectronic properties. Nevertheless, combining precise photoluminescence properties with controlled morphologies of SiO2 is a major hurdle for a broad range of basic research and technological applications. Here, we demonstrate that microemulsion droplet interfacial elasticity can be manipulated to induce definite morphologies associated with specific intrinsic and extrinsic photoluminescent defects in the silica matrix. Thus, under precise experimental conditions hollow crystalline and compact amorphous SiO2 spheres showing ultraviolet-photoluminescence and helicoidal fibrils of Ce-doped amorphous silica with violet-blue emissions are obtained. Overall, it is demonstrated that the combination of microemulsions and doping represents an easy strategy for the design of specific nanoscale structures with high efficiency photoluminescence. The detailed structural analysis provided in the present work is expected to be useful as accurate information on assessment of technological nanostructures.

  5. Carbon Diffusion through SiO2 from a Hydrogenated Amorphous Carbon Layer and Accumulation at the SiO2/Si Interface

    NASA Astrophysics Data System (ADS)

    Krafcsik, Olga H.; Vida, György; Pócsik, István; Josepovits, Katalin V.; Deák, Péter

    2001-04-01

    Carbon diffusion in a SiO2/Si system was investigated. The source was provided by chemical vapor deposition of a hydrogenated amorphous carbon layer onto the oxide at low temperature. From layers with low oxygen content, no carbon outdiffusion was detected up to 1190°C@. If the O content was high, the diffusion would start suddenly at 1140°C, and carbon accumulation would be found on the Si side of the SiO2/Si interface in the form of SiC precipitates. These results are interpreted by assuming oxygen-assisted dissociation of carbon atoms from the carbon layer in form of CO molecules, fast CO diffusion through SiO2 and an exothermic reaction of CO with Si. No carbon segregation was found in SiO2. Consequences of carbon island formation during SiC oxidation are pointed out.

  6. Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

    NASA Astrophysics Data System (ADS)

    Huan, Qing; Hu, Hao; Pan, Li-Da; Xiao, Jiang; Du, Shi-Xuan; Gao, Hong-Jun

    2010-08-01

    Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction. Finally, a phenomenal “two-branch" model is proposed to simulate the growth process of the seahorse pattern.

  7. Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

    NASA Astrophysics Data System (ADS)

    Kim, Kyung-Min; Choi, Byung Joon; Kim, Seong Keun; Hwang, Cheol Seong

    2004-11-01

    Capacitive tip arrays having a metal-insulator-semiconductor capacitor structure were fabricated using thermally oxidized SiO2 or atomic-layer-deposited HfO2 gate dielectric films for their application to scanning-probe-array-type memory devices. The SiO2 film showed a nonuniform thickness distribution over the flat and tip areas of the arrays owing to the different oxidation speeds of the flat and tip Si surfaces. This resulted in a smaller sensing margin of the device. However, the high-dielectric HfO2 film showed not only a higher capacitance value but also a more uniform growth behavior over the whole area, which would result in a better device performance. The capacitance-voltage characteristics of both devices coincide well with the simulation results based on conventional metal-insulator-semiconductor theories.

  8. Nanosecond homogeneous nucleation and crystal growth in shock-compressed SiO2

    NASA Astrophysics Data System (ADS)

    Shen, Yuan; Jester, Shai; Qi, Tingting; Reed, Evan

    Understanding the kinetics of shock-compressed SiO2 is of great importance for mitigating optical damage for high-intensity lasers and for understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high-pressure phases of this material, but the formation kinetics and underlying microscopic mechanisms are yet to be elucidated. Here, by employing multiscale molecular dynamics studies of shock-compressed fused silica and quartz, we find that silica transforms into a poor glass former that subsequently exhibits ultrafast crystallization within a few nanoseconds. We also find that, as a result of the formation of such an intermediate disordered phase, the transition between silica polymorphs obeys a homogeneous reconstructive nucleation and grain growth model. Moreover, we construct a quantitative model of nucleation and grain growth, and compare its predictions with stishovite grain sizes observed in laser-induced damage and meteoroid impact events.

  9. Nanosecond homogeneous nucleation and crystal growth in shock-compressed SiO2.

    PubMed

    Shen, Yuan; Jester, Shai B; Qi, Tingting; Reed, Evan J

    2016-01-01

    Understanding the kinetics of shock-compressed SiO2 is of great importance for mitigating optical damage for high-intensity lasers and for understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high-pressure phases of this material, but the formation kinetics and underlying microscopic mechanisms are yet to be elucidated. Here, by employing multiscale molecular dynamics studies of shock-compressed fused silica and quartz, we find that silica transforms into a poor glass former that subsequently exhibits ultrafast crystallization within a few nanoseconds. We also find that, as a result of the formation of such an intermediate disordered phase, the transition between silica polymorphs obeys a homogeneous reconstructive nucleation and grain growth model. Moreover, we construct a quantitative model of nucleation and grain growth, and compare its predictions with stishovite grain sizes observed in laser-induced damage and meteoroid impact events.

  10. Nanosecond homogeneous nucleation and crystal growth in shock-compressed SiO2

    NASA Astrophysics Data System (ADS)

    Shen, Yuan; Jester, Shai B.; Qi, Tingting; Reed, Evan J.

    2016-01-01

    Understanding the kinetics of shock-compressed SiO2 is of great importance for mitigating optical damage for high-intensity lasers and for understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high-pressure phases of this material, but the formation kinetics and underlying microscopic mechanisms are yet to be elucidated. Here, by employing multiscale molecular dynamics studies of shock-compressed fused silica and quartz, we find that silica transforms into a poor glass former that subsequently exhibits ultrafast crystallization within a few nanoseconds. We also find that, as a result of the formation of such an intermediate disordered phase, the transition between silica polymorphs obeys a homogeneous reconstructive nucleation and grain growth model. Moreover, we construct a quantitative model of nucleation and grain growth, and compare its predictions with stishovite grain sizes observed in laser-induced damage and meteoroid impact events.

  11. Optical characterization of glutamate dehydrogenase monolayers chemisorbed on SiO2

    NASA Astrophysics Data System (ADS)

    Pompa, P. P.; Blasi, L.; Longo, L.; Cingolani, R.; Ciccarella, G.; Vasapollo, G.; Rinaldi, R.; Rizzello, A.; Storelli, C.; Maffia, M.

    2003-04-01

    This paper describes the formation of glutamate dehydrogenase monolayers on silicon dioxide, and their characterization by means of physical techniques, i.e., fluorescence spectroscopy and Fourier-transform infrared spectroscopy. Detailed investigations of the intrinsic stability of native proteins in solution were carried out to elucidate the occurrence of conformational changes induced by the immobilization procedure. The enzyme monolayers were deposited on SiO2 after preexposing silicon surfaces to 3-aminopropyltriethoxysilane and reacting the silylated surfaces with glutaric dialdehyde. The optical characterization demonstrates that the immobilization does not interfere with the fold pattern of the native enzyme. In addition, fluorescence spectroscopy, thermal denaturation, and quenching studies performed on the enzyme in solution well describe the folding and unfolding properties of glutamate dehydrogenase. The photophysical studies reported here are relevant for nanobioelectronics applications requiring protein immobilization on a chip.

  12. Controlling the nanoscale rippling of graphene with SiO2 nanoparticles.

    PubMed

    Osváth, Z; Gergely-Fülöp, E; Nagy, N; Deák, A; Nemes-Incze, P; Jin, X; Hwang, C; Biró, L P

    2014-06-07

    The electronic properties of graphene can be significantly influenced by mechanical strain. One practical approach to induce strain in graphene is to transfer atomically thin membranes onto pre-patterned substrates with specific corrugations. The possibility of using nanoparticles to impart extrinsic rippling to graphene has not been fully explored yet. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared on a Si substrate by the Langmuir-Blodgett technique. We show that the corrugation of the transferred graphene, and thus the membrane strain, can be modified by annealing at moderate temperatures. The membrane parts bridging the nanoparticles are suspended and can be reversibly lifted by the attractive forces between an atomic force microscope tip and graphene. This allows the dynamic control of the local morphology of graphene nanomembranes.

  13. Controlling the nanoscale rippling of graphene with SiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Osváth, Z.; Gergely-Fülöp, E.; Nagy, N.; Deák, A.; Nemes-Incze, P.; Jin, X.; Hwang, C.; Biró, L. P.

    2014-05-01

    The electronic properties of graphene can be significantly influenced by mechanical strain. One practical approach to induce strain in graphene is to transfer atomically thin membranes onto pre-patterned substrates with specific corrugations. The possibility of using nanoparticles to impart extrinsic rippling to graphene has not been fully explored yet. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared on a Si substrate by the Langmuir-Blodgett technique. We show that the corrugation of the transferred graphene, and thus the membrane strain, can be modified by annealing at moderate temperatures. The membrane parts bridging the nanoparticles are suspended and can be reversibly lifted by the attractive forces between an atomic force microscope tip and graphene. This allows the dynamic control of the local morphology of graphene nanomembranes.

  14. Hierarchical core-shell SiO2@PDA@BiOBr microspheres with enhanced visible-light-driven photocatalytic performance.

    PubMed

    Zhu, Shuai-Ru; Qi, Qi; Zhao, Wen-Na; Wu, Meng-Ke; Fang, Yuan; Tao, Kai; Yi, Fei-Yan; Han, Lei

    2017-08-29

    To explore catalysts combining highly accessible specific surface areas with low recombination of the photo-induced electron-hole pairs, a novel SiO2@PDA@BiOBr composite photocatalyst with a hierarchical core-shell structure was prepared by a facile solvothermal method. The catalyst shows a superior performance on photodegradation of Rhodamine B under visible light irradiation, especially for SiO2@PDA-2@BiOBr with the reactant kinetics constant (k = 0.0487 min(-1)). The enhanced photocatalytic performance of SiO2@PDA-2@BiOBr was ascribed to the decreased band-gap, higher surface area, and effectively photo-generated electron-hole pairs by the introduction of polydopamine (PDA). In addition, the photocatalytic degradation is initiated by ˙O2(-) derived from dye photosensitization and h(+) from the BiOBr. Cyclic experiments also indicate that the SiO2@PDA-2@BiOBr is reusable during the photodegradation process. The hierarchical core-shell SiO2@PDA@BiOBr photocatalyst will provide a theoretical model for the development of physical chemistry and structural properties of BiOBr-based composites to enhance the photocatalytic performances.

  15. Lateral solidification of a liquid crystalline semiconductor film induced by temperature gradient

    NASA Astrophysics Data System (ADS)

    Hoshino, Tomoya; Ito, Hayato; Fujieda, Ichiro; Hanasaki, Tomonori

    2013-09-01

    Derivatives of [1]benzothieno[3,2-b]benzothiophene (BTBT) are attracting much attention as a highly soluble, highmobility semiconductor material for thin-film transistor applications. These small molecules are known to organize themselves into a single crystalline structure after spin coating or drop casting. Charge transport in a single crystal material is anisotropic in nature. Hence, it is desired to control its orientation during growth or recrystallization so that the source and drain electrodes of a transistor are to be placed along a faster transport direction. We propose to generate temperature gradient in a heated liquid crystalline thin film to induce lateral recrystallization. In experiment, we tried two methods. First, an aluminum plate with two narrow ridges was inserted between a temperature-controlled stage and a square silicon substrate with a 200nm-thick SiO2 and a spin-coated C8-BTBT film. We raised the temperature of the stage to 120oC and let it cool gradually. During cooling at around 105oC , the color of the sample started to change, indicating a phase change. This change proceeded from the corners of the film and in about 30 seconds, darker regions merged at the center of the substrate. Second, the sample was placed at the edge of the stage. In this case, the color change started from the protruding corner of the sample and proceeded toward the other end. Micrograph observation revealed that cracks were formed in these films and they were perpendicular to the direction of the phase change.

  16. Tetragonal to Cubic Transformation of SiO2-Stabilized ZrO2 Polymorph through Dysprosium Substitutions.

    PubMed

    Vasanthavel, Subramaniyan; Derby, Brian; Kannan, Sanjeevi

    2017-02-06

    Partially stabilized tetragonal zirconia (t-ZrO2) is of particular interest for hard tissue replacements. Aging-related failures of the ceramic associated with the gradual transformation from t-ZrO2 to m-ZrO2 (monoclinic zirconia) can lead to its premature removal from the implant site. In addition, monitoring the satisfactory performance of the implant throughout its lifespan without invasive techniques is a challenging task. The magnetic resonance imaging (MRI) contrast ability of dysprosium (Dy(3+)) is well-established. To this aim, varied levels of Dy(3+) additions in the ZrO2-SiO2 binary oxide system were explored. The results indicate the effective role of Dy(3+) in the formation of thermally and mechanically stable c-ZrO2 (cubic zirconia) phase at higher temperatures. The presence of SiO2 influenced the t-ZrO2 stabilization, whereas Dy(3+) tends to occupy the ZrO2 lattice sites to induce c-ZrO2 transition. Magnetic and MRI tests displayed the commendable contrast ability of Dy(3+) stabilized ZrO2-SiO2 binary systems. Nanoindentation results demonstrate a remarkable enhancement of the mechanical properties.

  17. Prediction of 10-fold coordinated TiO2 and SiO2 structures at multimegabar pressures

    PubMed Central

    Lyle, Matthew J.; Pickard, Chris J.; Needs, Richard J.

    2015-01-01

    We predict by first-principles methods a phase transition in TiO2 at 6.5 Mbar from the Fe2P-type polymorph to a ten-coordinated structure with space group I4/mmm. This is the first report, to our knowledge, of the pressure-induced phase transition to the I4/mmm structure among all dioxide compounds. The I4/mmm structure was found to be up to 3.3% denser across all pressures investigated. Significant differences were found in the electronic properties of the two structures, and the metallization of TiO2 was calculated to occur concomitantly with the phase transition to I4/mmm. The implications of our findings were extended to SiO2, and an analogous Fe2P-type to I4/mmm transition was found to occur at 10 TPa. This is consistent with the lower-pressure phase transitions of TiO2, which are well-established models for the phase transitions in other AX2 compounds, including SiO2. As in TiO2, the transition to I4/mmm corresponds to the metallization of SiO2. This transformation is in the pressure range reached in the interiors of recently discovered extrasolar planets and calls for a reformulation of the equations of state used to model them. PMID:25991859

  18. Effect of pressure on cation partitioning between immiscible liquids in the system Ti0 2-SiO 2

    NASA Astrophysics Data System (ADS)

    Circone, S.; Agee, C. B.

    1995-03-01

    Liquidus phase relations in the system Si0 2-TiO 2 have been determined at 3.0 GPa to investigate the effect of pressure on the partitioning of Si and Ti between coexisting immiscible liquids. Experiments on oxide mixtures containing 10, 50, 90, and 100 mol% TiO 2 were performed in multi-anvil and piston-cylinder apparatus at 2173-2740 K. At 1 atm, immiscible liquids form because the liquid structures are dissimilar: tetravalent cations occur in primarily fourfold (Si0 2-rich liquid) vs. sixfold (TiO 2-rich liquid) coordination by oxygen. At 3.0 GPa, immiscible liquids also coexist, but the phase relations and liquid compositions are significantly different. The eutectic liquid is now Ti0 2-rich (78.4 vs. 8.1 mol% TiO 2 at 1 atm). Above the liquidus, the coexisting immiscible liquids are enriched in Si0 2. The Si0 2 content of the TiO 2-rich liquid has increased by more than a factor of 3, while the TiO2-content of the SiO 2-rich liquid has decreased by 1/2. The persistence of a wide solvus implies that pressure does not cause liquid structure assimilation. The observed shift in immiscible liquid compositions indicated that pressure has raised the activity of TiO 2 in the liquid dominated by tetravalent cations in fourfold coordination and lowered the activity of SiO 2 in a liquid dominated by tetravalent cations in sixfold coordination. The decrease in TiO 2 content of the SiO 2-rich liquid with pressure is probably related to the positive volume of mixing observed in 1 atm glasses in this composition range. The enhanced solubility of SiO 2 in the TiO 2-rich liquid with pressure may be due to a pressure-induced increase in the coordination state of Si.

  19. Nanocrystals encapsulated in SiO2 particles: silanization and homogenous coating for bio applications.

    PubMed

    Yang, Ping; Li, Xiaoyu; Zhang, Ruili; Liu, Ning; Zhang, Yulan

    2013-03-01

    Sol-gel procedures have been developed to encapsulate inorganic nanocrystals including metallic Au and II-VI semiconductor materials (CdSe/Cd(1-x)Zn(x)S) in SiO2 particles by using tetraethyl orthosilicate. The key strategy was the control of a sol-gel procedure. The anisotropic deposition of SiO2 monomers occurs because well-developed crystal facets having different affinity to SiO2 monomers. SiO2 monomers were not homogeneously deposited on nonspherical Au and CdSe/Cd(1-x)Zn(x)S nanocrystals. A surface silanization process, partly hydrolyzed tetraethyl orthosilicate were attached to the nanocrystals instead of initial ligands, plays an important role for the nanocrystals coated homogeneously with a SiO2 layer. Furthermore, CdSe/Cd(1-x)Zn(x)S nanocrystals were homogeneously coated with a thin SiO2 layer by the surface silanization process and a subsequent reverse micelle route. Colloidal Au nanocrystals were homogeneously coated with a SiO2 shell by the surface silanization process and subsequent Stöber synthesis without using a silane coupling agent or bulk polymer as the surface primer to render the Au surface vitreophilic. These results indicated partly hydrolyzed tetraethyl orthosilicate has an ability to replace the ligand on nanocrystals. After surface modification, the SiO2 particles with nanocrystals were conjugated with antibody for bioapplications.

  20. Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Guo, Li Qiang; Jin Wan, Chang; Qiang Zhu, Li; Wan, Qing

    2013-09-01

    Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with proton-induced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization.

  1. Gap states in pentacene thin film induced by inert gas exposure.

    PubMed

    Bussolotti, Fabio; Kera, Satoshi; Kudo, Kazuhiro; Kahn, Antoine; Ueno, Nobuo

    2013-06-28

    We studied gas-exposure effects on pentacene (Pn) films on SiO2 and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of ∼10(16) states eV-1 cm-3 comparable to electrical measurements. The results show the striking effects for Pn/SiO2: exposure to inert gas (N2 and Ar) produces a sharp rise in gap states from ∼10(16) to ∼10(18) states eV-1 cm-3 and pushes the Fermi level closer to the valence band (0.15-0.17 eV), as does exposure to O2 (0.20 eV), while no such gas-exposure effect is observed for Pn/Au(111). The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the crystal grain boundaries.

  2. High-frequency magnetic permeability of single- and multilayered (Co41Fe39B20) x (SiO2)100- x nanocomposites

    NASA Astrophysics Data System (ADS)

    Tarasova, O. S.; Sitnikov, A. V.; Kalinin, Yu. E.; Starostenko, S. N.; Granovskii, A. B.

    2016-12-01

    Thin film single-layered (Co41Fe39B20) x (SiO2)100- x nanocomposites at x = 30-80 at % and multilayered nanocomposites composed of 176 pairs of [(Co41Fe39B20)60(SiO2)40]/[(Co41Fe39B20)60(SiO2)40 + O2] have been prepared via ion-beam sputtering of the complex target. The concentration dependences of the magnetic permeability of single-layered films at a frequency of 50 MHz are characterized by maximum losses near x = 60 at %, whereas the percolation threshold with respect to the electric conductivity is x = 50 at %. The high-frequency magnetic permeability of films has been measured by the resonator method in the frequency range of 0.1—10 GHz. As is shown, while the single-layer film passes to the multilayered structure, the ferromagnetic resonance frequency shifts from 1.5 to 2.5 GHz, and the imaginary part of the magnetic permeability attains 200 that is presumably due to the inhibition of the perpendicular magnetic anisotropy component.

  3. Stability and lattice dynamics of SiO2 cristobalite

    NASA Astrophysics Data System (ADS)

    Coh, Sinisa; Vanderbilt, David

    2008-03-01

    Among the phases of SiO2 are alpha and beta cristobalite. Despite early indications that the higher-temperature beta phase might be cubic (Fd3m), it is now accepted that it is in fact tetragonal (I42d), and that the experiments suggesting a cubic structure were averaging spatially or dynamically over tetragonal domains. Recently, Zhang and Scott (J. Phys. Cond.Matt. 19, 275201) suggested that the lower-temperature alpha phase, widely accepted to be tetragonal (P41212), might be an artifact in a similar way. With this motivation we investigate the energy landscape in the vicinity of cristobalite phases using first-principles calculations. We use the ABINIT implementation of density-functional theory in a plane-wave pseudopotential framework. We find that both the P41212 alpha and I42d beta phases are local minima, thus reinforcing that the identification of the alpha phase as belonging to the P41212 structure. We compute the frequencies of phonon modes at high-symmetry k-points in both structures and compare with experiment. We also identify a minimum-energy path connecting the alpha and beta phases through an intermediate orthorhombic phase (P212121), and find a surprisingly low barrier of ˜5,eV per formula unit. We note that a simple rigid-unit mode picture gives a good rough description of these energetics, and we map out the minimum-energy path in the space of rigid unit rotations in a physically insightful way.

  4. Surface tailoring of SiO 2 nanoparticles by mechanochemical method based on simple milling

    NASA Astrophysics Data System (ADS)

    Lin, Jinbin; Chen, Hongling; Yao, Licheng

    2010-08-01

    An appropriate modifying agent is obviously important with regard to the surface treatment of nanoparticles. Moreover, a right physical mixer that can provide enough energy to break up the secondary structure (aggregate and agglomerate) of nanoparticles is absolutely critical to the modification as well. However, it is not easy to give consideration to both of them during the process of modification. As is often the case, we tend to take care of the modifying agent but lose sight of the physical mixer. In this paper, hybrid particles of SiO 2/2,4-Diisocyanatotoluene (SiO 2/TDI) and SiO 2/2,4-Diisocyanatotoluene/hydroxyl silicone oil (SiO 2/TDI/(PDMS-OH)) were fabricated by mechanochemical method based on simple milling. The prepared hybrid particles (SiO 2/TDI and SiO 2/TDI/(PDMS-OH)) were characterized by infrared spectroscopy (FT-IR), static contact angle (CA), water sorption measurement, thermal analysis (TGA and DSC) and transmission electron microscopy (TEM). FT-IR spectra and thermal analysis (DSC) results demonstrate that TDI together with PDMS-OH is chemically anchored to the surface of nano-SiO 2. TGA results show that the grafting density of TDI is as high as 2.62 TDI/nm 2, while the grafting density of PDMS-OH is 0.0156 PDMS-OH/nm 2. Deduced from static contact angle (CA) and water sorption measurement, both hybrid particles exhibit strong hydrophobic (140 o for SiO 2/TDI and 144 o for SiO 2/TDI/(PDMS-OH)) after modification. TEM images reveal that hybrid particles (SiO 2/TDI and SiO 2/TDI/(PDMS-OH)) prepared by ball milling method exhibit much better miscibility and dispersibility in PDMS matrix when compared with those particles prepared by a common mixing device.

  5. Continuous-wave laser annealing of free-standing Si /SiO2 superlattice: Modification of optical, structural, and light-emitting properties

    NASA Astrophysics Data System (ADS)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-09-01

    Raman, optical, and photoluminescence studies of a free-standing Si /SiO2 superlattice (SL) are described with emphasis on laser-induced thermal effects (laser annealing). The Si /SiO2 SL (500 repeats of 2-nm-thick Si and SiO2 layers) on a Si substrate was grown by a molecular beam deposition method and annealed at 1100°C for 1h in an oven, which promoted Si nanocrystals. Then the Si substrate was partially chemically etched producing free-standing areas. Continuous-wave laser annealing (˜104W /cm2) of the as-prepared free-standing SL strongly increases the Raman band of Si nanocrystals at ˜515cm-1, which features laser-induced crystallization and presumably originates from melting of Si nanostructures. The obtained results show that thermal annealing at 1100°C does not finish structural reorganization of the Si /SiO2 SL material and a large proportion of Si excess can be undetectable by Raman spectroscopy in related thermally annealed materials. For the laser-crystallized samples, various material characteristics (Raman spectra, light emission, and absorption) have been measured as a function of laser-induced temperature and period of laser annealing. The light emission is found to be a straightforward function of the temperature whereas the absorption coefficient depends on the laser-annealing period suggesting additional laser-induced structural reorganization.

  6. CdS nanoparticles incorporated onion-like mesoporous silica films: Ageing-induced large stokes shifted intense PL emission

    NASA Astrophysics Data System (ADS)

    Mishra, Manish Kr; Mandal, Abhijit; Saha, Jony; De, Goutam

    2013-10-01

    CdS nanoparticles (NPs) were generated in onion-like ordered mesoporous SiO2 films through a modified sol-gel process using P123 as a structure directing agent. Initially Cd2+ doped (12 equivalent mol% with respect to the SiO2) mesoporous SiO2 films were prepared on glass substrate. These films after heat-treatment at 350 °C in air yielded transparent mesoporous SiO2 films having hexagonally ordered onion-like pore channels embedded with uniformly dispersed CdO NPs. The generated CdO NPs were transformed into CdS NPs after exposing the films in H2S gas at 200 °C for 2 h. The as-prepared CdS NPs incorporated mesoporous SiO2 films (transparent and bright yellow in color) showed a band-edge emission at 485 nm and a weak surface defect related emission at 530 nm. During ageing of the films in ambient condition the band-edge emission gradually weakened with time and almost disappeared after about 15 days with concomitant increase of defect related strong surface state emission band near 615 nm. This transformation was related to the decay of initially formed well crystalline CdS to relatively smaller and weakly crystalline CdS NPs with surface defects due to gradual oxidation of surface sulfide. At this condition the embedded CdS NPs show large Stokes shifted (˜180 nm) intense broad emission which could be useful for luminescent solar concentrators. The detailed process was monitored by UV-Visible, FTIR and Raman spectroscopy, XPS, XRD and TEM studies. The evolution of photoluminescence (PL) and life times of CdS/SiO2 films were monitored with respect to the ageing time.

  7. Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition.

    PubMed

    Sobel, Nicolas; Hess, Christian; Lukas, Manuela; Spende, Anne; Stühn, Bernd; Toimil-Molares, M E; Trautmann, Christina

    2015-01-01

    Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS) reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7-1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS) confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced.

  8. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy.

    PubMed

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature.

  9. The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy

    PubMed Central

    Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

    2014-01-01

    The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature. PMID:25482412

  10. Fabrication and properties of highly luminescent materials from Tb(OH)3@SiO2 and Tb(OH)3@SiO2:Eu3+ nanotubes

    NASA Astrophysics Data System (ADS)

    Thu Huong, Tran; Anh, Tran Kim; Minh, Le Quoc

    2009-09-01

    Luminescent nanomaterials with one-dimensional (1D) structures have attracted much attention due to their unique properties and potential applications in nanophotonics and nanobiophotonics. In this paper, we report a synthesis of terbium - hydroxide - at - silica Tb(OH)3@SiO2 and Tb(OH)3@SiO2:Eu3+ nanotubes. Terbium - hydroxide tubes were synthesized by soft template method. The size of the tubes can be controlled precisely and have outer diameters ranging from 80 to 120 nm, wall thickness of about 30 nm, and lengths ranging from 300 to 800 nm. To fabricate core/shell materials, the seed growth method is used. FESEM, X-ray diffraction, Raman spectra of Tb(OH)3 and Tb(OH)3@SiO2 nanotubes were investigated. The photoluminescence (PL) spectrum of Tb(OH)3 under 325 nm excitation consists of four main peaks at 488, 542, 582, and 618 nm. Furthermore, a preliminary suggestion for the mechanism of growth of the Tb(OH)3 nanotubes using the soft - template synthesis technique has been proposed. The PL intensity from Tb(OH)3@SiO2 or Tb(OH)3@SiO2:Eu3+ nanotubes is much stronger than that of Tb(OH)3.

  11. Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

    DTIC Science & Technology

    2009-06-15

    the grafted TiO2 were in a highly dispersed amorphous form.19 Atomic layer deposition (ALD) is a thin film growth technique, which relies on self... Thin Films . U.S. Patent 4058430, 1977. (21) Ritala, M. Appl. Surf. Sci. 1997, 112, 223. TiO2 /SiO2 Catalysts Prepared by ALD J. Phys. Chem. C, Vol. 113...Surface Acidity and Properties of TiO2 /SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman

  12. Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures

    PubMed Central

    Tsuchiya, Taku; Tsuchiya, Jun

    2011-01-01

    Ultrahigh-pressure phase relationship of SiO2 silica in multimegabar pressure condition is still quite unclear. Here, we report a theoretical prediction on a previously uncharacterized stable structure of silica with an unexpected hexagonal Fe2P-type form. This phase, more stable than the cotunnite-type structure, a previously postulated postpyrite phase, was discovered to stabilize at 640 GPa through a careful structure search by means of ab initio density functional computations over various structure models. This is the first evidential result of the pressure-induced phase transition to the Fe2P-type structure among all dioxide compounds. The crystal structure consists of closely packed, fairly regular SiO9 tricapped trigonal prisms with a significantly compact lattice. Additional investigation further elucidates large effects of this phase change in SiO2 on the stability of MgSiO3 and CaSiO3 at multimegabar pressures. A postperovskite phase of MgSiO3 breaks down at 1.04 TPa along an assumed adiabat of super-Earths and yields Fe2P-type SiO2 and CsCl (B2)-type MgO. CaSiO3 perovskite, on the other hand, directly dissociates into SiO2 and metallic CaO, skipping a postperovskite polymorph. Predicted ultrahigh-pressure and temperature phase diagrams of SiO2, MgSiO3, and CaSiO3 indicate that the Fe2P-type SiO2 could be one of the dominant components in the deep mantles of terrestrial exoplanets and the cores of gas giants. PMID:21209327

  13. Prediction of a hexagonal SiO2 phase affecting stabilities of MgSiO3 and CaSiO3 at multimegabar pressures.

    PubMed

    Tsuchiya, Taku; Tsuchiya, Jun

    2011-01-25

    Ultrahigh-pressure phase relationship of SiO(2) silica in multimegabar pressure condition is still quite unclear. Here, we report a theoretical prediction on a previously uncharacterized stable structure of silica with an unexpected hexagonal Fe(2)P-type form. This phase, more stable than the cotunnite-type structure, a previously postulated postpyrite phase, was discovered to stabilize at 640 GPa through a careful structure search by means of ab initio density functional computations over various structure models. This is the first evidential result of the pressure-induced phase transition to the Fe(2)P-type structure among all dioxide compounds. The crystal structure consists of closely packed, fairly regular SiO(9) tricapped trigonal prisms with a significantly compact lattice. Additional investigation further elucidates large effects of this phase change in SiO(2) on the stability of MgSiO(3) and CaSiO(3) at multimegabar pressures. A postperovskite phase of MgSiO(3) breaks down at 1.04 TPa along an assumed adiabat of super-Earths and yields Fe(2)P-type SiO(2) and CsCl (B2)-type MgO. CaSiO(3) perovskite, on the other hand, directly dissociates into SiO(2) and metallic CaO, skipping a postperovskite polymorph. Predicted ultrahigh-pressure and temperature phase diagrams of SiO(2), MgSiO(3), and CaSiO(3) indicate that the Fe(2)P-type SiO(2) could be one of the dominant components in the deep mantles of terrestrial exoplanets and the cores of gas giants.

  14. UV-Triggered Self-Healing of a Single Robust SiO2 Microcapsule Based on Cationic Polymerization for Potential Application in Aerospace Coatings.

    PubMed

    Guo, Wanchun; Jia, Yin; Tian, Kesong; Xu, Zhaopeng; Jiao, Jiao; Li, Ruifei; Wu, Yuehao; Cao, Ling; Wang, Haiyan

    2016-08-17

    UV-triggered self-healing of single microcapsules has been a good candidate to enhance the life of polymer-based aerospace coatings because of its rapid healing process and healing chemistry based on an accurate stoichiometric ratio. However, free radical photoinitiators used in single microcapsules commonly suffer from possible deactivation due to the presence of oxygen in the space environment. Moreover, entrapment of polymeric microcapsules into coatings often involves elevated temperature or a strong solvent, probably leading to swelling or degradation of polymer shell, and ultimately the loss of active healing species into the host matrix. We herein describe the first single robust SiO2 microcapsule self-healing system based on UV-triggered cationic polymerization for potential application in aerospace coatings. On the basis of the similarity of solubility parameters of the active healing species and the SiO2 precursor, the epoxy resin and cationic photoinitiator are successfully encapsulated into a single SiO2 microcapsule via a combined interfacial/in situ polymerization. The single SiO2 microcapsule shows solvent resistance and thermal stability, especially a strong resistance for thermal cycling in a simulated space environment. In addition, the up to 89% curing efficiency of the epoxy resin in 30 min, and the obvious filling of scratches in the epoxy matrix demonstrate the excellent UV-induced healing performance of SiO2 microcapsules, attributed to a high load of healing species within the capsule (up to 87 wt %) and healing chemistry based on an accurate stoichiometric ratio of the photoinitiator and epoxy resin at 9/100. More importantly, healing chemistry based on a UV-triggered cationic polymerization mechanism is not sensitive to oxygen, extremely facilitating future embedment of this single SiO2 microcapsule in spacecraft coatings to achieve self-healing in a space environment with abundant UV radiation and oxygen.

  15. Role of bovine serum albumin and humic acid in the interaction between SiO2 nanoparticles and model cell membranes.

    PubMed

    Wei, Xiaoran; Qu, Xiaolei; Ding, Lei; Hu, Jingtian; Jiang, Wei

    2016-12-01

    Silica nanoparticles (SiO2 NPs) can cause health hazard after their release into the environment. Adsorption of natural organic matter and biomolecules on SiO2 NPs alters their surface properties and cytotoxicity. In this study, SiO2 NPs were treated by bovine serum albumin (BSA) and humic acid (HA) to study their effects on the integrity and fluidity of model cell membranes. Giant and small unilamellar vesicles (GUVs and SUVs) were prepared as model cell membranes in order to avoid the interference of cellular activities. The microscopic observation revealed that the BSA/HA treated (BSA-/HA-) SiO2 NPs took more time to disrupt membrane than untreated-SiO2 NPs, because BSA/HA adsorption covered the surface SiOH/SiO(-) groups and weakened the interaction between NPs and phospholipids. The deposition of SiO2 NPs on membrane was monitored by a quartz crystal microbalance with dissipation (QCM-D). Untreated- and HA-SiO2 NPs quickly disrupted the SUV layer on QCM-D sensor; BSA-SiO2 NPs attached on the membranes but only caused slow vesicle disruption. Untreated-, BSA- and HA-SiO2 NPs all caused the gelation of the positively-charged membrane, which was evaluated by the generalized polarity values. HA-SiO2 NPs caused most serious gelation, and BSA-SiO2 NPs caused the least. Our results demonstrate that the protein adsorption on SiO2 NPs decreases the NP-induced membrane damage.

  16. Nanoscale Phase-Separated Structure in Core-Shell Nanoparticles of SiO2-Si1-xGexO2 Glass Revealed by Electron Microscopy.

    PubMed

    Kubo, Yugo; Yonezawa, Kazuhiro

    2017-09-05

    SiO2-based optical fibers are indispensable components of modern information communication technologies. It has recently become increasingly important to establish a technique for visualizing the nanoscale phase-separated structure inside SiO2-GeO2 glass nanoparticles during the manufacturing of SiO2-GeO2 fibers. This is because the rapidly increasing price of Ge has made it necessary to improve the Ge yield by clarifying the detailed mechanism of Ge diffusion into SiO2. However, direct observation of the internal nanostructure of glass particles has been extremely difficult, mainly due to electrostatic charging and the damage induced by electron and X-ray irradiation. In the present study, we used state-of-the-art scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and energy dispersive X-ray spectroscopy (EDX) to examine cross-sectional samples of SiO2-GeO2 particles embedded in an epoxy resin, which were fabricated using a broad Ar ion beam and a focused Ga ion beam. These advanced techniques enabled us to observe the internal phase-separated structure of the nanoparticles. We have for the first time clearly determined the SiO2-Si1-xGexO2 core-shell structure of such particles, the element distribution, the degree of crystallinity, and the quantitative chemical composition of microscopic regions, and we discuss the formation mechanism for the observed structure. The proposed imaging protocol is highly promising for studying the internal structure of various core-shell nanoparticles, which affects their catalytic, optical, and electronic properties.

  17. Ordered SiO2 (phenolic-formaldehyde resin) in situ nanocomposites

    NASA Astrophysics Data System (ADS)

    Hernández-Padrón, G.; Rojas, F.; Castaño, V. M.

    2004-01-01

    Nanocomposite materials consisting of monodisperse SiO2 particles embedded in a polymerized resin matrix were produced by the adhesion of silica globules on the surface of a chemically modified phenolic-formaldehyde resin (MPFR) substrate that incorporates carboxylic groups in its molecules. Two routes were followed to obtain SiO2 nanoparticles-MPFR materials. The first procedure consisted of the growth of an SiO2 phase concurrently with the presence of MPFR molecules. The second procedure involved the preparation of a monodisperse SiO2 sol that was subsequently mixed with an MPFR solution. The thermal curing of the MPFR resin phase at 80 °C brought about thin SiO2-MPFR flakes from samples obtained from procedure 1 whilst monolithic pieces arose from samples from procedure 2. During the curing process, silanol surface groups of the silica globules reacted with carboxylic groups of the MPFR molecules to create a reinforced SiO2-MPFR substance that displayed ester bonds across the interface. Thermal treatments of specimens prepared by procedure 2 were performed at 150, 250, 400, 600 and 800 °C to monitor the integrity of the resultant hybrid substrates. To assess the characteristics of SiO2-MPFR materials, some of the main chemical, structural and textural characteristics of several specimens have been determined via FTIR, SEM and N2 adsorption studies.

  18. Nitridation of SiO2 for surface passivation

    NASA Technical Reports Server (NTRS)

    Lai, S. K. C.

    1985-01-01

    An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

  19. Reduction of Mobile Pt Ion Density in SiO 2 and Si-SiO 2 Interface State Density in Pt-diffused Metal-Oxide-Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Deng, Bei; Shu, Chang; Kuwano, Hiroshi

    1995-07-01

    Platinum diffusion into bipolar devices introduces mobile Pt ions into SiO2 films and causes the state density at the Si-SiO2 interface to increase. Mobile Pt ions make the devices unstable and the increase in the interface state density causes enhancement of leakage current. MOS, metal-phosphosilicate glass-oxide-semiconductor (MGOS) and metal-silicon nitride-oxide-semiconductor (MNOS) structures are fabricated on (111) and (100) substrates in order to investigate means of reducing these adverse effects induced by Pt diffusion. Mobile Pt ions, the interface state density and the flat-band voltage for these structures are measured. The experimental results show that the MGOS structure with the (100) oriented substrate is most beneficial in reducing the adverse effects of Pt-diffused devices.

  20. Kinetics of valeric acid ketonization and ketenization in catalytic pyrolysis on nanosized SiO2, γ-Al2O3, CeO2/SiO2, Al2O3/SiO2 and TiO2/SiO2.

    PubMed

    Kulyk, Kostiantyn; Palianytsia, Borys; Alexander, John D; Azizova, Liana; Borysenko, Mykola; Kartel, Mykola; Larsson, Mats; Kulik, Tetiana

    2017-04-09

    Valeric acid is an important renewable platform chemical that can efficiently be produced from lignocellulosic biomass. Upgrading of valeric acid by catalytic pyrolysis has the potential to produce value added biofuels and chemicals on an industrial scale. Understanding the different mechanisms involved in the thermal transformations of valeric acid on the surface of nanosized oxides is important for the development of efficient heterogeneously-catalyzed pyrolytic conversion techniques. In this work, the thermal decomposition of valeric acid on the surface of nanoscale SiO2, γ-Al2O3, CeO2/SiO2, Al2O3/SiO2 and TiO2/SiO2 has been investigated by Temperature-Programmed Desorption Mass Spectrometry (TPD MS). Fourier transform infrared spectroscopy (FTIR) has been used to investigate the structure of valeric acid complexes on the oxide surfaces. Two main products of pyrolytic conversion were observed to be formed depending on the nano-catalyst used - dibutylketone and propylketene. The mechanisms of ketene and ketone formation from chemisorbed fragments of valeric acid are proposed and the kinetic parameters of the corresponding reactions were calculated. It was found that the activation energy of ketenization decreases in the order SiO2>γ-Al2O3>TiO2/SiO2>Al2O3/SiO2, and the activation energy of ketonization decreases in the order γ-Al2O3>CeO2/SiO2. Nano-oxide CeO2/SiO2 was found to selectively catalyze ketonization reaction.

  1. Photoluminiscence response of Ru(II) complex immobilized in SiO2-based matrix to dissolved oxygen in beer.

    PubMed

    Anastasova, S; Milanova, M; Todorovsky, D

    2008-04-24

    The possibility to use the photoluminescence of Ru(II) tris(4,7-diphenyl-1,10-phenathroline) dichloride, immobilized in sol-gel produced SiO2-based matrix for the determination of dissolved oxygen concentration in beer is studied. Organically-modified silane (octyltriethoxysilane) and mixtures from tetraethoxysilane and octyltriethoxysilane are used as precursors for matrix production. Spin- and dip-coating techniques are applied for films deposition. The predeposition ultrasound treatment of the sol ensures a good sensitivity and a linear sensor quenching response to oxygen in 1/6 ppm O2-concentration interval. The CO2 present practically has no effect on the films performance. Their photoluminescence show rather good stability on prolonged storage in beer.

  2. Using Atom-Probe Tomography to Understand Zn O ∶Al /SiO 2/Si Schottky Diodes

    NASA Astrophysics Data System (ADS)

    Jaramillo, R.; Youssef, Amanda; Akey, Austin; Schoofs, Frank; Ramanathan, Shriram; Buonassisi, Tonio

    2016-09-01

    We use electronic transport and atom-probe tomography to study Zn O ∶Al /SiO 2/Si Schottky diodes on lightly doped n - and p -type Si. We vary the carrier concentration in the ZnO ∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO ∶Al at the junction is likely to be metallic even when the bulk of the ZnO ∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.

  3. Bottom-up nanofabrication through catalyzed vapor phase HF etching of SiO2

    NASA Astrophysics Data System (ADS)

    Zhao, Shichao; Liu, Haitao

    2015-01-01

    We show that a wide range of inorganic and organic molecules or nanostructures can enhance the vapor phase HF etching of SiO2 resulting in a negative tone pattern transfer to a SiO2 substrate. The templates used in this study include micron- and nanometer-sized NaCl crystals, graphene oxide flakes, and albumin molecules. In all cases, a negative-tone pattern transfer to the underlying SiO2 substrate was obtained. The results suggest that vapor phase HF etching could be a general purpose pattern transfer technique for nanoscale and supramolecular templates.

  4. Surface spins disorder in uncoated and SiO2 coated maghemite nanoparticles

    NASA Astrophysics Data System (ADS)

    Zeb, F.; Nadeem, K.; Shah, S. Kamran Ali; Kamran, M.; Gul, I. Hussain; Ali, L.

    2017-05-01

    We studied the surface spins disorder in uncoated and silica (SiO2) coated maghemite (γ-Fe2O3) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO2 coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (TB) for SiO2 coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (Ms) of SiO2 coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO2 coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1- BTb)) was fitted well for both uncoated and SiO2 coated nanoparticles and yields: B =3×10-7 K-b, b=2.22 and B=0.0127 K-b, b=0.57 for uncoated and SiO2 coated nanoparticles, respectively. Higher value of B for SiO2 coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO2 coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO2 coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO2 coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface spins disorder in SiO2 coated nanoparticles than in uncoated γ-Fe2O3 nanoparticles.

  5. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  6. A Stable Monomeric SiO2 Complex with Donor-Acceptor Ligands.

    PubMed

    Rodriguez, Ricardo; Gau, David; Saouli, Jérémy; Baceiredo, Antoine; Saffon-Merceron, Nathalie; Branchadell, Vicenç; Kato, Tsuyoshi

    2017-03-27

    Isolation of a monomeric SiO2 compound 3 as a stable donor-acceptor complex with two different ligands -a σ-donating ligand (pyridine, dimethylaminopyridine, N-heterocyclic carbene) and a donor-acceptor ligand (iminophosphorane)-is presented. The SiO2 complex 3 is soluble in ordinary organic solvents and is stable at room temperature in solution and in the solid state. Of particular interest, 3 remains reactive and can be used as a stable and soluble unimolecular SiO2 reagent.

  7. Out-coupling efficiency enhancement of organic light emitting diode device by SiO2-UV hardener composite layer.

    PubMed

    Ham, Hyo Kyun; Oh, Yong Taeg; Choi, Seok Eui; Park, Jong Woon; Choi, BumHo; Shin, Dong Chan

    2011-02-01

    The enhancement of out-coupling efficiency of organic light emitting diode (OLED) using SiO2-polymer composite layers was investigated. The SiO2-polymer composite was made from a SiO2 nanopowder and commercial UV-hardeners. The composite layer was coated on glass by dip-coating method in a SiO2 suspension, followed by spin-coating of 1 microm thick UV-hardener of was found that the optical properties were depend on the quantity of SiO2 nanopowder in the composite layer and dispersion of SiO2 suspension. 194/440 nm size of SiO2 nanopowders were added to the composite layer to enhance the light scattering effect. The OLED device which the SiO2-polymer composite layer was applied showed enhanced out-coupling efficiency around 30%.

  8. Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors

    NASA Astrophysics Data System (ADS)

    Kamata, Hironobu; Kita, Koji

    2017-03-01

    We studied the dipole induced flatband voltage (VFB) shifts of Si MOS capacitors with Al2O3/SiO2/Al2O3/SiO2/Si laminated stacks ((Al2O3/SiO2)n/Si, n = 2) designed for a large positive shift of VFB. The VFB shift caused by each dipole layer was determined from capacitance-voltage characteristics by excluding the effect of fixed charges. Due to the additivity of multiple dipole layers in the laminated stack, a large VFB shift (>1 V) was observed. In our experimental condition, the dipole layers at Al2O3-on-SiO2 interfaces were selectively formed, while those at SiO2-on-Al2O3 interfaces were effectively suppressed. The validity of such additivity of VFB shifts induced by selectively formed dipole layers was also experimentally demonstrated for n ≥ 3 laminated stacks. An introduction of multiple dipole layers is applicable for a threshold voltage tuning in a wider range than the tuning with a single dipole layer.

  9. Effect of SiO2 nanoparticle doping on electro-optical properties of polymer dispersed liquid crystal lens for smart electronic glasses

    NASA Astrophysics Data System (ADS)

    Kim, Eunju; Liu, Yang; Hong, Sung-Jei; Han, Jeong In

    2015-03-01

    In this paper, SiO2 nanoparticle doped polymer dispersed liquid crystal (PDLC) lenses were made from a mixture of prepolymer, E7 liquid crystal and SiO2 nanoparticles by the polymerization induced phase separation (PIPS) process for smart electronic glasses with auto-shading and auto-focusing functions. Electro-optical properties of doped and undoped samples including transmittance, driving voltage, contrast ratio and slope of the linear region of the transmittance-voltage were measured, compared and analyzed. Driving voltage of SiO2 nanoparticle doped PDLC lenses moderately improved. But the slope of linear region, response time and contrast ratio deteriorated, especially the latter two. It can be assumed that these doping effects were due to the mechanistic change from liquid-gel separation to liquid-liquid separation by the fast heterogeneous nucleation rate caused by the increased nucleation at the surface of SiO2 nanoparticles. The marked deteriorations of falling response time and contrast ratio were due to well defined liquid crystal molecules in LC droplets, which induced slow and imperfect random rearrangement of LC molecules at the off state.

  10. Transformation superplasticity of water ice and ice containing SiO2 particulates

    NASA Astrophysics Data System (ADS)

    Schuh, C. A.; Dunand, D. C.

    2002-11-01

    Transformation superplasticity is a deformation mechanism that occurs during the phase transformation of an externally stressed material. Pressure-induced transformation superplasticity, which has long been postulated to occur in olivine in the Earth's interior, is shown to take place in water ice. Pure ice specimens were subjected to hydrostatic pressure cycling between 0 and 300 MPa to reversibly induce the I/II transformation (at 220 or 230 K) or the I/III transformation (at 240 K). When a small uniaxial compressive stress was applied during cycling, the specimens exhibited a uniaxial compressive strain (as large as 22% after a single cycle) proportional to the applied stress, in agreement with observations and theory for transformation superplasticity of metals and ceramics, induced by polymorphic thermal cycling. Additionally, specimens of ice containing 10 vol% SiO2 were deformed by this mechanism during the I/II transformation at 230 K. The presence of silica particles was found to enhance the deformation, rather than strengthen the ice. These experimental results are discussed both qualitatively and quantitatively in terms of existing models of transformation superplasticity and implications for the lithosphere rheology of the icy moons of the outer planets.

  11. Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

    NASA Technical Reports Server (NTRS)

    Johannes, Daniel; Webber, Robert

    2013-01-01

    across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

  12. Insulin adsorption on crystalline SiO2: Comparison between polar and nonpolar surfaces using accelerated molecular-dynamics simulations

    NASA Astrophysics Data System (ADS)

    Nejad, Marjan A.; Mücksch, Christian; Urbassek, Herbert M.

    2017-02-01

    Adsorption of insulin on polar and nonpolar surfaces of crystalline SiO2 (cristobalite and α -quartz) is studied using molecular dynamics simulation. Acceleration techniques are used in order to sample adsorption phase space efficiently and to identify realistic adsorption conformations. We find major differences between the polar and nonpolar surfaces. Electrostatic interactions govern the adsorption on polar surfaces and can be described by the alignment of the protein dipole with the surface dipole; hence spreading of the protein on the surface is irrelevant. On nonpolar surfaces, on the other hand, van-der-Waals interaction dominates, inducing surface spreading of the protein.

  13. Synthesis for Magnetic Mesoporous Fe3O4-SiO2 Composites and Heterogeneous Fenton Degradation of Methyl Blue

    NASA Astrophysics Data System (ADS)

    Xie, Huanling; Zhang, Tengyun

    2014-12-01

    In this work, we presented a facile, one-step preparation for magnetic mesoporous Fe3O4-SiO2 composites under closely neutral conditions by an evaporation-induced self-assembly (EISA) and adding 1,3,5-TMB as co-solvent approach. The resulting samples were characterized by X-ray diffraction, N2 adsorption measurement, FT-IR and SEM. Magnetic mesoporous composites and H2O2 form heterogeneous Fenton in order to removal methylene blue as the dye wastewater model object. The catalysts showed high catalytic activity and stability in the decolorization of methlye blue.

  14. QSAR model for cytotoxicity of SiO2 nanoparticles on human lung fibroblasts

    NASA Astrophysics Data System (ADS)

    Toropova, Alla P.; Toropov, Andrey A.; Benfenati, Emilio; Korenstein, Rafi

    2014-02-01

    The possibility of building up predictive model for cytotoxicity of SiO2-nanoparticles (SiO2-NPs) by means of so-called optimal descriptors which are mathematical functions of size and concentration of SiO2-NPs is demonstrated with data on sixteen systems' "size-concentration." The calculation has been carried out by means of the CORAL software (http://www.insilico.eu/coral/). The statistical quality of the best model for the cytotoxic inhibition ratio (%) of human lung fibroblasts cultured in the media containing different concentrations of SiO2-NPs which is measured by MTT assay is the following: n = 10, r 2 = 0.9837, s = 2.53 %, F = 483 (training set) and n = 6, r 2 = 0.9269, s = 7.94 % (test set). The perspectives of this approach are discussed.

  15. Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation.

    PubMed

    Nguyen, Truong Khang; Le, Khai Q; Canimoglu, Adil; Can, Nurdogan

    2016-09-01

    In this study, we investigate optical properties of metal nanoparticle crystals fabricated by implanting copper (Cu) ions into single silica (SiO2) crystals with 400keV at various ion doses. The Cu implanted SiO2 (SiO2:Cu) crystal produces a broadband luminescence emission, ranging from blue to yellow, and having a blue luminescence peak at 546nm. Such anomalous luminescence emission bands suggest that the ion implantation may give rise to aggregation of Cu nanoparticles in the host matrix. The boundary element method-based modelling of a given Cu nanoparticle aggregation was employed to justify the broadband luminescence emission. Formation of Cu nanoparticles in SiO2 is predicted through their optical absorption data. The experimental results are compared with results of Mie calculations and we observe that the higher ion dose produces the larger particle size.

  16. Arrays of SiO(2) Substrate-Free Micromechanical Uncooled THz and Infrared Detectors

    SciTech Connect

    Grbovic, Dragoslav; Lavrik, Nickolay V; Rajic, Slobodan; Datskos, Panos G

    2008-01-01

    We describe the design, fabrication, and characterization of arrays of uncooled infrared and terahertz micromechanical detectors that utilize SiO2 as a main structural material. Materials with highly dissimilar coefficients of thermal expansion, namely, Al and SiO2, were used to form folded bimaterial regions. This approach improved the detector sensitivity by 12 times compared to SiNx-based detectors of similar shape and size. Two types of structural SiO2 layers were investigated: thermally grown and plasma-enhanced chemical-vapor-deposited SiO2. Fabrication of the detector arrays relied on a straightforward process flow that involved three photolithography steps and no wet etching. The noise equivalent temperature difference intrinsic to the detectors fabricated during this work can reach 3.8 mK when excluding any contribution from the optical readout used to interrogate the arrays.

  17. Arrays of SiO2 substrate-free micromechanical uncooled infrared and terahertz detectors

    NASA Astrophysics Data System (ADS)

    Grbovic, D.; Lavrik, N. V.; Rajic, S.; Datskos, P. G.

    2008-09-01

    We describe the design, fabrication, and characterization of arrays of uncooled infrared and terahertz micromechanical detectors that utilize SiO2 as a main structural material. Materials with highly dissimilar coefficients of thermal expansion, namely, Al and SiO2, were used to form folded bimaterial regions. This approach improved the detector sensitivity by 12 times compared to SiNx-based detectors of similar shape and size. Two types of structural SiO2 layers were investigated: thermally grown and plasma-enhanced chemical-vapor-deposited SiO2. Fabrication of the detector arrays relied on a straightforward process flow that involved three photolithography steps and no wet etching. The noise equivalent temperature difference intrinsic to the detectors fabricated during this work can reach 3.8 mK when excluding any contribution from the optical readout used to interrogate the arrays.

  18. Experimental determination of nanofluid specific heat with SiO2 nanoparticles in different base fluids

    NASA Astrophysics Data System (ADS)

    Akilu, S.; Baheta, A. T.; Sharma, K. V.; Said, M. A.

    2017-09-01

    Nanostructured ceramic materials have recently attracted attention as promising heat transfer fluid additives owing to their outstanding heat storage capacities. In this paper, experimental measurements of the specific heats of SiO2-Glycerol, SiO2-Ethylene Glycol, and SiO2-Glycerol/Ethylene Glycol mixture 60:40 ratio (by mass) nanofluids with different volume concentrations of 1.0-4.0% have been carried out using differential scanning calorimeter at temperatures of 25 °C and 50 °C. Experimental results indicate lower specific heat capacities are found with SiO2 nanofluids compared to their respective base fluids. The specific heat was decreasing with the increase of concentration, and this decrement depends on upon the type of the base fluid. It is observed that temperature has a positive impact on the specific heat capacity. Furthermore, the experimental values were compared with the theoretical model predictions, and a satisfactory agreement was established.

  19. EPR study of phenolic radical stabilization by grafting on SiO 2

    NASA Astrophysics Data System (ADS)

    Panagiota, Stathi; Louloudi, Maria; Deligiannakis, Yiannis

    2009-04-01

    A hybrid [SiO 2-GA] material has been synthesized by grafting Gallic acid (3,4,5-trihydroxybenzoic acid, GA) on SiO 2 via formation of amide bonds between amine groups on aminopropyl-silica and the carboxyl group of GA. The spatial fixation of GA prevents polymerization effects. EPR spectroscopy shows that GA radicals on [SiO 2-GA] show remarkable stability, comparable to that previously observed only for radicals in biological matrices on in soil organic matter. EPR reveals a bundle-like organization of the GA molecules on [SiO 2-GA] material. The relation of these factors to the enhanced radical stability is discussed.

  20. Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

    PubMed Central

    Shim, Kyu Hwan; Hulme, John; Maeng, Eun Ho; Kim, Meyoung-Kon; An, Seong Soo A

    2014-01-01

    A multitude of nanoparticles, such as titanium oxide (TiO2), zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were found for arginine-coated positively charged SiO2 nanoparticles than for the negatively charged nanoparticles. The proteins identified as bound in the corona from SiO2 nanoparticles were further analyzed with ClueGO, a Cytoscape plugin used in protein ontology and for identifying biological interaction pathways. Proteins bound on the surface of nanoparticles may affect functional and conformational properties and distributions in complicated biological processes. PMID:25565838

  1. Properties of Cathodoluminescence for Cryogenic Applications of SiO2-based Space Observatory Optics and Coatings

    NASA Technical Reports Server (NTRS)

    Evans, Amberly; Dennison, J.R.; Wilson, Gregory; Dekany, Justin; Bowers Charles W.; Meloy, Robert; Heaney, James B.

    2013-01-01

    Disordered thin film SiO2SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high-energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (60-200 nm) SiO2SiOx optical coatings on reflective metal substrates over a range of sample temperatures (40-400 K) and emission wavelengths (260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UVVISNIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

  2. Optimization of SiO2-TiNxOy-Cu interference absorbers: numerical and experimental results

    NASA Astrophysics Data System (ADS)

    Lazarov, Michel P.; Sizmann, R.; Frei, Ulrich

    1993-10-01

    SiO2 - TiNxOy-Cu absorbers were prepared with activated reactive evaporation (ARE). The deposition parameters for the ARE process were adjusted according to the results of the numerical optimizations by a genetic algorithm. We present spectral reflectance, calorimetric and grazing incidence X-ray reflection (GXR) measurements. Best coatings for applications as selective absorber in the range of T equals 100 (DOT)(DOT)(DOT) 200 degree(s)C exhibit a solar absorptance of 0.94 and a near normal emittance of 0.044 at 100 degree(s)C. This emittance is correlated with the hemispherical emittance of 0.061 obtained from calorimetric measurements at 200 degree(s)C. First results on lifetime studies show that the coatings are thermally stable under vacuum up to 400 degree(s)C. The SiO2 film passivates the absorber, a substantial slow down of degradation in dry air is observed. Our tests demonstrate that the coating will withstand break down in cooling fluid and vacuum if mounted in an evacuated collector.

  3. Facile approach in fabricating superhydrophobic SiO2/polymer nanocomposite coating

    NASA Astrophysics Data System (ADS)

    Chen, Hengzhen; Zhang, Xia; Zhang, Pingyu; Zhang, Zhijun

    2012-11-01

    We have developed a facile spin-coating method to prepare water-repellent SiO2/polymer composite coating without any surface chemical modification. The wettability can be adjusted by controlling the content of SiO2 nanoparticles. The coating demonstrates sustainable superhydrophobicity in the condition of continuous contact with corrosive liquids. Importantly, the coating can be fabricated on various metal substrates to prevent metal from corrosion.

  4. Mechanisms of diffusion of boron impurities in SiO2.

    PubMed

    Otani, Minoru; Shiraishi, Kenji; Oshiyama, Atsushi

    2003-02-21

    We report first-principle total-energy calculations that clarify mechanisms of boron diffusion in SiO2. We find that a B atom takes a variety of stable and metastable geometries depending on its charge state. We also find that atomic rearrangements during the diffusion manifest a wealth of bonding feasibility in SiO2 and that the calculated activation energy agrees with the experimental data available. Recombination enhanced diffusion is also proposed.

  5. Self-cleaning and superhydrophilic wool by TiO2/SiO2 nanocomposite

    NASA Astrophysics Data System (ADS)

    Pakdel, Esfandiar; Daoud, Walid A.; Wang, Xungai

    2013-06-01

    Wool fabrics were functionalised using TiO2 and TiO2/SiO2 nanocomposites through a low-temperature sol-gel method. Titanium terta isopropoxide (TTIP) and tetra ethylorthosilicate (TEOS) were employed as precursors of TiO2 and SiO2, respectively. Nanocomposite sols were devised based on three molar ratio percentages of TiO2/SiO2 70:30, 50:50, and 30:70 to investigate the role of each component. The self-cleaning and hydrophilicity of wool fabrics were analysed based on the removal of coffee stain under UV and water droplet contact angle measurements, respectively. It was observed that applying TiO2/SiO2 50:50 and 30:70 sols to wool rendered the fabric superhydrophilic. Fabrics functionalised with TiO2/SiO2 30:70 showed the highest efficiency in stain removal, followed by samples functionalised with TiO2/SiO2 50:50.

  6. PVP immobilized SiO2 nanospheres for high-performance shear thickening fluid

    NASA Astrophysics Data System (ADS)

    Liu, Mei; Chen, Qian; Wang, Sheng; Bai, Linfeng; Sang, Min; Jiang, Wanquan; Xuan, Shouhu; Gong, Xinglong

    2017-07-01

    We develop a modified method to improve the rheological performance of SiO2-based shear thickening fluid (STF). Directly adding surfactant into STF is the most common method to improve the rheological performance of SiO2-based STF. However, the final viscosity increases quickly with the increase of shear rate, which is against for the practical applications. In this work, SiO2 nanospheres are firstly modified by PVP K30 through an ethanol refluxing method and the modified SiO2 nanospheres are used to prepare PVP@SiO2-STF. Compared with the unmodified SiO2 based STF (SiO2-STF), the PVP@SiO2-STF presents an obvious increase of shear thickening (ST) effects and the maximum viscosity increases by 7 times and the critical shear rates decrease about 10 times approximately. A reasonable explanation is proposed to interpret the influence of the modification methods on the rheological properties of STF. This work provides a new way to control the shear thickening behavior and also contributes to understand the mechanism of ST effect, which has an important significance to develop controllable STF.

  7. Effect of helium on structure and compression behavior of SiO2 glass

    PubMed Central

    Shen, Guoyin; Mei, Qiang; Prakapenka, Vitali B.; Lazor, Peter; Sinogeikin, Stanislav; Meng, Yue; Park, Changyong

    2011-01-01

    The behavior of volatiles is crucial for understanding the evolution of the Earth’s interior, hydrosphere, and atmosphere. Noble gases as neutral species can serve as probes and be used for examining gas solubility in silicate melts and structural responses to any gas inclusion. Here, we report experimental results that reveal a strong effect of helium on the intermediate range structural order of SiO2 glass and an unusually rigid behavior of the glass. The structure factor data show that the first sharp diffraction peak position of SiO2 glass in helium medium remains essentially the same under pressures up to 18.6 GPa, suggesting that helium may have entered in the voids in SiO2 glass under pressure. The dissolved helium makes the SiO2 glass much less compressible at high pressures. GeO2 glass and SiO2 glass with H2 as pressure medium do not display this effect. These observations suggest that the effect of helium on the structure and compression of SiO2 glass is unique. PMID:21444785

  8. Photoluminescence properties of hybrid SiO2-coated CdTe/CdSe quantum dots.

    PubMed

    Liu, Ning; Yang, Ping

    2014-09-01

    Hybrid SiO2-coated CdTe/CdSe quantum dots (QDs) were prepared using CdTe/CdSe QDs prepared by hydrothermal synthesis. A CdSe interlayer made CdTe/CdSe cores with unique type II heterostructures. The hybrid SiO2-coated CdTe/CdSe QDs revealed excellent photoluminescence (PL) properties compared with hybrid SiO2-coated CdTe QDs. Because of the existence of spatial separations of carriers in the type II CdTe/CdSe core/shell QDs, the hybrid QDs had a relatively extended PL lifetime and high stability in phosphate-buffered saline buffer solutions. This is ascribed to the unique components and stable surface state of hybrid SiO2-coated CdTe/CdSe QDs. During the stabilization test in phosphate-buffered saline buffer solutions, both static and dynamic quenching occurred. The quenching mechanism of the hybrid QDs was not suited with the Stern–Volmer equation. However, the relative stable surface of CdTe/CdSe QDs resulted in lower degradation and relative high PL quantum yields compared with hybrid SiO2-coated CdTe QDs. As a result, hybrid SiO2-coated CdTe/CdSe QDs can be used in bioapplications.

  9. Synthesis and Characterization of Microwave Absorber SiO2 by Sol-Gel Methode

    NASA Astrophysics Data System (ADS)

    Wardiyati, S.; Adi, W. A.; Deswita

    2017-05-01

    In recent years, information technology is growing rapidly, such as communication devices. However, there are still many shortcomings, for example, confidential information leaks caused by the leakage of electromagnetic waves used. A coating of electromagnetic materials or formation composite of electromagnetic material with other materials such as SiO2 is needed to overcome these problems. For such needs, it is necessary to study the manufacture of SiO2 which is simple, cheap, and effective. In this research, manufacture of SiO2 by sol-gel method used a solution of sodium silicate (Na2SiO3) as precursors and H2SO4 as a catalyst. The parameters tested in this experiment is the effect of sintering temperature on the properties of the resulting SiO2. The purpose of this study was to obtain an amorphous SiO2 powder, which is in nano-sized and has a high surface area. The characterization of prepared samples were performed by using an X-ray Diffraction (XRD), Fourier Transmission Infra Red (FTIR), Scanning electron microscopy-energy dispersive spectrometer (SEM-EDS), Transmission Electron Microscopy (TEM), and Surface Area Analyzer (SAA). Based on the experimental results, the SiO2 amorphous structure was obtained with a particle size of 15-20 nm, the surface area of 298 m2/g, and sintering temperature of 100 °C.

  10. Enhanced Formation of Si Nanocrystals in SiO2 by Light-Filtering Rapid Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Chen, Xiaobo; Chen, Guangping

    2015-04-01

    In this work, silicon-rich oxide (SRO) films with designed thickness of 100 nm were deposited by a bipolar pulse and radio frequency magnetron co-sputtering. For comparison, the samples were then treated in a nitrogen atmosphere by conventional rapid thermal annealing (CRTA) or light-filtering rapid thermal annealing (LRTA) at 900-1100°C for 2 min. Raman spectra, grazing incident X-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurements, and current density-voltage measurements were carried out to analyze the microstructural and electrical properties of samples. Compared with the control sample using CRTA method, the crystalline volume fraction and number density of Si nanocrystals (SiNCs) in silicon oxide prepared by LRTA were greatly increased. The quantum effects of the short wave-length light (less than 800 nm) of these tungsten halogen lamps during the rapid thermal annealing process have negative effects on the formation of SiNCs in SiO2 films. SiNCs with crystal volume fraction of 73%, average size of 2.53 nm, and number density of 1.1 × 1012 cm-2 embedded in the amorphous SiO2 matrix can be formed by LRTA at 1100°C. Enhancement of more than one order of magnitude in conductivity and higher current density were obtained from the LRTA annealed sample compared to the CRTA annealed sample. The improvements in conductivity and current density were attributed to the high density SiNCs. Our results show that the LRTA method is a suitable annealing tool for the formation of SiNC in thin SiOx films.

  11. Space Weathering of Silicates Simulated by Successive Laser Irradiation: In Situ Reflectance Measurements of Fo90, Fo99+, and Sio2

    NASA Technical Reports Server (NTRS)

    Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

    2016-01-01

    Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of nanophase metallic Fe (npFe0) grains, 2050 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laserpulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

  12. Space Weathering of Silicates Simulated by Successive Laser Irradiation: in Situ Reflectance Measurements of Fo90, Fo99+, and SiO2

    NASA Technical Reports Server (NTRS)

    Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

    2016-01-01

    Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of "nanophase" metallic Fe (npFe0) grains, 20-50 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100-400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laser pulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

  13. Space weathering of silicates simulated by successive laser irradiation: In situ reflectance measurements of Fo90, Fo99+, and SiO2

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

    2016-02-01

    Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of "nanophase" metallic Fe (npFe0) grains, 20-50 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100-400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laser pulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

  14. Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films

    NASA Astrophysics Data System (ADS)

    Nishida, Kentaro; Ono, Kouichi; Eriguchi, Koji

    2017-06-01

    We propose a new optical model for assigning the physical structure of plasma-damaged SiOC films examined by spectroscopic ellipsometry. A two-parameter Bruggeman’s effective medium approximation is used for estimating the thickness and volume fraction of a low-dielectric (ɛ) region (ɛ ˜ 1) in the SiO2 background. We introduced an optical model consisting of damaged and undamaged layers. The thickness and fraction of the damaged layer are fitted. Prediction was performed using this model for SiOC samples exposed to various plasmas, and the results were compared with those of scanning electron microscopy. We further applied this model to estimating the depth of damaged region in combination with a layer-by-layer wet-etching technique. In the case of He plasma exposure, the structural change induced by the damage extends 90-130 nm in depth. Since the degradation of interlayer dielectrics affects the circuit performance, the proposed optical model should be used for designing plasma processes.

  15. Highly active surface-enhanced Raman scattering (SERS) substrates based on gold nanoparticles infiltrated into SiO2 inverse opals

    NASA Astrophysics Data System (ADS)

    Ankudze, Bright; Philip, Anish; Pakkanen, Tuula T.; Matikainen, Antti; Vahimaa, Pasi

    2016-11-01

    SiO2 inverse opal (IO) films with embedded gold nanoparticles (AuNPs) for surface-enhanced Raman scattering (SERS) application are reported. SiO2 IO films were loaded with AuNPs by a simple infiltration in a single cycle to form Au-SiO2 IOs. The optical property and the morphology of the Au-SiO2 IO substrates were characterized; it was observed that they retained the Bragg diffraction of SiO2 IO and the localized surface plasmon resonance (LSPR) of AuNPs. The SERS property of the Au-SiO2 IO substrates were studied with methylene blue (MB) and 4-aminothiophenol (4-ATP). The SERS enhancement factors were 107 and 106 for 4-ATP and MB, respectively. A low detection limit of 10-10 M for 4-ATP was also obtained with the Au-SiO2 IO substrate. A relative standard deviation of 18.5% for the Raman signals intensity at 1077 cm-1 for 4-ATP shows that the Au-SiO2 IO substrates have good signal reproducibility. The results of this study indicate that the Au-SiO2 IO substrates can be used in sensing and SERS applications.

  16. Fe effect on the optical properties of TiO2:Fe2O3 nanostructured composites supported on SiO2 microsphere assemblies

    PubMed Central

    2014-01-01

    The effect of Fe ion concentration on the morphological, structural, and optical properties of TiO2 films supported on silica (SiO2) opals has been studied. TiO2:Fe2O3 films were prepared by the sol-gel method in combination with a vertical dip coating procedure; precursor solutions of Ti and Fe were deposited on a monolayer of SiO2 opals previously deposited on a glass substrate by the same procedure. After the dip coating process has been carried out, the samples were thermally treated to obtain the TiO2:Fe2O3/SiO2 composites at the Fe ion concentrations of 1, 3, and 5 wt%. Scanning electron microscopy (SEM) micrographs show the formation of colloidal silica microspheres of about 50 nm diameter autoensembled in a hexagonal close-packed fashion. Although the X-ray diffractograms show no significant effect of Fe ion concentration on the crystal structure of TiO2, the μ-Raman and reflectance spectra do show that the intensity of a phonon vibration mode and the energy bandgap of TiO2 decrease as the Fe+3 ion concentration increases. PMID:25276103

  17. A post-stishovite SiO2 polymorph in the meteorite Shergotty: implications for impact events.

    PubMed

    Sharp, T G; El Goresy, A; Wopenka, B; Chen, M

    1999-05-28

    Transmission electron microscopy and electron diffraction show that the martian meteorite Shergotty, a shocked achondrite, contains a dense orthorhombic SiO2 phase similar to post-stishovite SiO2 with the alpha-PbO2 structure. If an SiO2 mineral exists in Earth's lower mantle, it would probably occur in a post-stishovite SiO2 structure. The presence of such a high-density polymorph in a shocked sample indicates that post-stishovite SiO2 structures may be used as indicators of extreme shock pressures.

  18. Fabrication of ZIF-8@SiO2 Micro/Nano Hierarchical Superhydrophobic Surface on AZ31 Magnesium Alloy with Impressive Corrosion Resistance and Abrasion Resistance.

    PubMed

    Wu, Cuiqing; Liu, Qi; Chen, Rongrong; Liu, Jingyuan; Zhang, Hongsen; Li, Rumin; Takahashi, Kazunobu; Liu, Peili; Wang, Jun

    2017-03-29

    Superhydrophobic coatings are highly promising for protecting material surfaces and for wide applications. In this study, superhydrophobic composites, comprising a rhombic-dodecahedral zeolitic imidazolate framework (ZIF-8@SiO2), have been manufactured onto AZ31 magnesium alloy via chemical etching and dip-coating methods to enhance stability and corrosion resistance. Herein, we report on a simple strategy to modify hydrophobic hexadecyltrimethoxysilan (HDTMS) on ZIF-8@SiO2 to significantly improve the property of repelling water. We show that various liquids can be stable on its surface and maintain a contact angle higher than 150°. The morphologies and chemical composition were characterized by means of scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FI-IR). In addition, the anticorrosion and antiattrition properties of the film were assessed by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization and HT, respectively. Such a coating shows promising potential as a material for large-scale fabrication.

  19. A 1550 nm PbS semiconductor quantum dots fiber amplifier based on SiO2 sol-gel method

    NASA Astrophysics Data System (ADS)

    Sun, Xiaolan; Li, Chao; Xie, Libin; Liu, Xiaohong; Dong, Yanhua

    2011-12-01

    A novel PbS quantum dots (QDs) fiber amplifier based on SiO2 Sol-Gel method was proposed. The QDs doped SiO2 films was deposited onto a fused tapered fiber coupler based on standard single mode fiber (SMF). With a 980 nm wavelength laser diode (LD) as the pump, 1550 nm signal and 980 nm pump light waves were injected into the tapered region simultaneously, through the evanescent wave, we obtained the gain at 1576 nm wavelength as high as 5 dB. The proposed fiber amplififier can implement the property of a small, integrated, high output, low noise, high gain, low cost, which meet the need of the future of optical fiber communication system.

  20. Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD.

    PubMed

    Kato, Toshiaki; Hatakeyama, Rikizo

    2012-10-23

    A transfer-free method for growing carrier-density-controlled graphene directly on a SiO(2) substrate has been realized for the first time by rapid-heating plasma chemical vapor deposition (RH-PCVD). Using this method, high-quality single-layer graphene sheets with a hexagonal domain can be selectively grown between a Ni film and a SiO(2) substrate. Systematic investigations reveal that the relatively thin Ni layer, rapid heating, and plasma CVD are critical to the success of this unique method of graphene growth. By applying this technique, an easy and scalable graphene-based field effect transistor (FET) fabrication is also demonstrated. The electrical transport type of the graphene-based FET can be precisely tuned by adjusting the NH(3) gas concentration during the RH-PCVD process.

  1. Raspberrylike SiO2@reduced graphene oxide@AgNP composite microspheres with high aqueous dispersity and excellent catalytic activity.

    PubMed

    Xiao, Wei; Zhang, Yanhua; Liu, Bitao

    2015-03-25

    The hybridizations of functional microspheres with graphene or graphene oxide (GO) sheets often suffer from severe agglomeration behaviors, leading to poor water dispersity of the resultant composite materials. Here, we first demonstrate that the sonication-assisted self-assembly of tiny GO sheets (whose lateral size less than 200 nm) on microspheric substrates like cationic polyelectrolyte-modified SiO2 microspheres could effectively overcome such a common drawback. On the basis of this facile strategy, we further developed reduced graphene oxide/silver nanoparticle composite film wrapped SiO2 microspheres, which not only possessed unique raspberrylike structure and high aqueous dispersity but also exhibited exceptional catalytic activity toward the reduction of 4-nitrophenol.

  2. Influence of in situ applied ultrasound during Si+ implantation in SiO2 on paramagnetic defect generation

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Romanyuk, A.; Stesmans, A.

    2010-06-01

    Electron spin resonance (ESR) results are presented on the influence of in situ ultrasound treatment (UST) during implantation at 300 K of Si+ ions into thermal SiO2 on (100)Si before and after subsequent high-temperature (T) annealing (1100 °C) intended to promote the formation of embedded Si nanoparticles. The as-implanted state exhibits high densities of three prominent types of point defects, including the SiO2-specific S and E'γ O-vacancy type centers, and an unknown broad (≈20 G) signal at g≈2.0026 denoted IS. The high-intensity S signal shows demagnetization shape effects, pointing to a distribution of high local density of defects over a thin layer. UST is observed to effectuate a drastic reduction in S and E'γ centers, and elimination of IS beyond detection. This reveals a strong healing influence of in situ transferred ultrasound (US) energy on implantation-induced damage, here quantified and identified on atomic level in terms of mainly intrinsic paramagnetic point defects elimination, viz., Frenkel pair elimination, while all three initial signals disappear. Other types of defects surface after annealing of the non-US treated sample, including the SiO2-specific EX defect signal and Pb-type Si/SiO2 interface centers, the appearance of the latter providing direct ESR evidence for crystallization of the excess Si nanoparticles. The influence of the UST healing effect is kept up after subsequent annealing, now resulting in the absence of virtually all ESR-active centers. The drop in Pb-type centers below the detection level in the UST annealed sample indicates improvement of the nanocrystalline-Si/SiO2 interface quality. The combination of UST with high-T annealing emerges as a highly efficient means to eradicate ion implantation damage in terms of intrinsic point defects.

  3. Induced changes in refractive index, optical band gap, and absorption edge of polycarbonate-SiO2 thin films by Vis-IR lasers

    NASA Astrophysics Data System (ADS)

    Ehsani, Hassan; Akhoondi, Somaieh

    2016-09-01

    In this experimental work, we have studied induced changes in refractive index, extinction coefficient, and optical band-gap of Bisphenol-A-polycarbonate (BPA-PC) coated with a uniform and thin, anti-scratch SiO2 film irradiated by visible to near-infrared lasers at 532 nm (green),650 nm(red), and 980 nm (IR)wavelength lasers with different energy densities. Our lasers sources are indium-gallium-aluminum-phosphide, second harmonic of neodymium-YAG-solid state lasers and gallium-aluminum-arsenide-semiconductor laser. The energy densities of our sources have been changed by changing the spot size of incident laser. samples transmission spectra were monitored by carry500 spectrophotometer and induced changes in optical properties are evaluated by using, extrapolation of the transmission spectrum through Swanepoel method and computer application

  4. Fabrication of biomimetic high performance antireflective and antifogging film by spin-coating.

    PubMed

    Zhang, Liang; Lü, Changli; Li, Yunfeng; Lin, Zhe; Wang, Zhanhua; Dong, Heping; Wang, Tieqiang; Zhang, Xuemin; Li, Xiao; Zhang, Junhu; Yang, Bai

    2012-05-15

    In this paper, we report a facile way to fabricate biomimetic high performance optical hybrid films with excellent antireflective and antifogging properties by one-step spin-coating the mixture of mesoporous SiO(2) particles and SiO(2) sol. The production process of the films is easy, low-cost, and time-efficient. Mesoporous SiO(2) particles containing surfactants disperse in SiO(2) sol stably without any chemical modification, which decrease the effective refractive index and increase the transmittance of the films. In addition, such films possess superhydrophilic properties and exhibit high performance antifogging properties. Due to the good film forming performance of SiO(2) sol, mesoporous SiO(2) particles are embedded in the films and impart the films high mechanical stability and durability. The surface morphology of the films can maintain well after repeated friction, and the performances of antireflective and antifogging also do not change as well.

  5. Nanosecond Timescale Homogeneous Nucleation and Crystal Growth in Shock-Compressed SiO2

    NASA Astrophysics Data System (ADS)

    Shen, Yuan; Barak, Shai; Qi, Tingting; Reed, Evan

    2015-06-01

    Understanding the kinetics of shock compressed SiO2 is of great importance for mitigating optical damage for high intensity lasers and understanding meteoroid impacts. Experimental work has placed some thermodynamic bounds on the formation of high pressure crystal phases, but the kinetics and microscopic mechanisms are yet to be elucidated. The latter are particularly relevant for this material which has long-lived metastable states. Enabled by million atom multiscale shock technique (MSST) molecular dynamics studies of shock compressed fused silica and quartz using variations on the BKS analytical potential, we discover here that crystallization occurs within as little as a few nanoseconds. In surprising contrast to shock induced solid-solid phase transformations in metals, we find that the transition from quartz obeys a diffusion mediated homogeneous nucleation and growth model due to formation of an intermediate disordered phase. We construct a quantitative model of diffusion mediated nucleation and growth kinetics and compare to stishovite grain sizes observed in laser damage events and near the Barringer Crater. We also study the effect of quantum nuclear effects using the quantum bath MSST and find that shock temperatures are shifted up to 500 K from classical values.

  6. Prediction of SiO2 etching profile under the presence of RIE-lag effect

    NASA Astrophysics Data System (ADS)

    Yagisawa, Takashi; Makabe, Toshiaki

    2008-10-01

    As the size of ULSI elements shrinks further, functional design for a top-down plasma processing will be strongly required in order to predict and overcome many types of damages induced by plasma etching. The reactive ion etching (RIE) of high-aspect contact hole (HARC) or inter-layer dielectric (ILD) has been traditionally performed by fluorocarbon chemistry under the presence of high-energy ion bombardment in a two-frequency capacitively coupled plasma (2f-CCP) reactor. It is experimentally known as RIE-lag effect that the etching rate at the bottom decreases with increasing the aspect ratio of the pattern. The dependence of etch rate on the aspect ratio will be a crucial issue to be addressed in a top-down plasma nano-processing. In the present study, a feature profile evolution of SiO2 trench pattern is predicted under competition among etching and polymer deposition by the level-set method. When the etch depth is small, the incident ions are reflected at the sidewall and focused in the center of the trench, resulting in a slight enhancement of the etch rate at the bottom. On the other hand, the geometrical shadowing effect which reduces both ions and radicals striking the bottom surface will be dominant at high aspect ratio. Dependence of RIE-lag on a biasing voltage will also be discussed.

  7. Structural color in porous, superhydrophilic, and self-cleaning SiO2/TiO2 Bragg stacks.

    PubMed

    Wu, Zhizhong; Lee, Daeyeon; Rubner, Michael F; Cohen, Robert E

    2007-08-01

    Thin-film Bragg stacks exhibiting structural color have been fabricated by a layer-by-layer (LbL) deposition process involving the sequential adsorption of nanoparticles and polymers. High- and low-refractive-index regions of quarter-wave stacks were generated by calcining LbL-assembled multilayers containing TiO(2) and SiO(2) nanoparticles, respectively. The physical attributes of each region were characterized by a recently developed ellipsometric method. The structural color characteristics of the resultant nanoporous Bragg stacks could be precisely tuned in the visible region by varying the number of stacks and the thickness of the high- and low-refractive-index stacks. These Bragg stacks also exhibited potentially useful superhydrophilicity and self-cleaning properties.

  8. TEM studies of Ge nanocrystal formation in PECVD grown SiO2:Ge/SiO2 multilayers

    NASA Astrophysics Data System (ADS)

    Agan, S.; Dana, A.; Aydinli, A.

    2006-06-01

    We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 °C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 °C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 °C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

  9. Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

    NASA Astrophysics Data System (ADS)

    Junige, Marcel; Löffler, Markus; Geidel, Marion; Albert, Matthias; Bartha, Johann W.; Zschech, Ehrenfried; Rellinghaus, Bernd; van Dorp, Willem F.

    2017-09-01

    Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

  10. Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum.

    PubMed

    Junige, Marcel; Löffler, Markus; Geidel, Marion; Albert, Matthias; Bartha, Johann W; Zschech, Ehrenfried; Rellinghaus, Bernd; Dorp, Willem F van

    2017-09-27

    Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

  11. Relationship between lymphocyte DNA fragmentation and dose of iron oxide (Fe2O3) and silicon oxide (SiO2) nanoparticles.

    PubMed

    Jiménez-Villarreal, J; Rivas-Armendáriz, D I; Arellano Pérez-Vertti, R D; Olivas Calderón, E; García-Garza, R; Betancourt-Martínez, N D; Serrano-Gallardo, L B; Morán-Martínez, J

    2017-02-08

    At present, the use of nanoparticles is a controversial topic, especially when analyzing their effects in human tissues. Nanoparticles (NPs) can cause oxidative stress by increasing membrane lipids peroxidation and reactive oxygen species, and decreasing intracellular glutathione. Oxidative stress plays an important role in cell signaling and inflammatory responses. It can result in genotoxicity, affect cell proliferation, and induce DNA damage. The objective of this study is to evaluate the genotoxic potential of NPs in lymphocyte DNA. Wistar female rats (N = 45) were sorted in three randomized groups as follows: Group 1 (N = 20); Group 2 (N = 20) and a control group (N = 5). A single dose of iron oxide (Fe2O3) and silicon oxide (SiO2) NPs dissolved in saline solution were administered orally to the rats. Cardiac puncture was performed to extract peripheral blood for genotoxic analysis. DNA fragmentation for lymphocytes was performed. Control rats showed a fragmentation percentage of 11.20 ± 2.16%. Rats exposed to SiO2 and Fe2O3 NPs for 24 h showed statistically significant differences in DNA fragmentation percentages as compared with that of the control group. A lineal dose-response correlation between genotoxic damage and exposure to SiO2 and Fe2O3 NPs was found (r(2) = 0.99 and 0.98 for SiO2 and Fe2O3, respectively). In conclusion, we found that exposure to Fe2O3 and SiO2 NPs can cause DNA fragmentation in lymphocytes in a dose-dependent manner.

  12. Exploring Pd adsorption, diffusion, permeation, and nucleation on bilayer SiO2/Ru as a function of hydroxylation and precursor environment: From UHV to catalyst preparation

    NASA Astrophysics Data System (ADS)

    Pomp, Sascha; Kaden, William E.; Sterrer, Martin; Freund, Hans-Joachim

    2016-10-01

    The hydroxylation-dependent permeability of bilayer SiO2 supported on Ru(0001) was investigated by XPS and TDS studies in a temperature range of 100 K to 600 K. For this, the thermal behavior of Pd evaporated at 100 K, which results in surface and sub-surface (Ru-supported) binding arrangements, was examined relative to the extent of pre-hydroxylation. Samples containing only defect-mediated hydroxyls showed no effect on Pd diffusion through the film at low temperature. If, instead, the concentration of strongly bound hydroxyl groups and associated weakly bound water molecules was enriched by an electron-assisted hydroxylation procedure, the probability for Pd diffusion through the film is decreased via a pore-blocking mechanism. Above room temperature, all samples showed similar behavior, reflective of particle nucleation above the film and eventual agglomeration with any metal atoms initially binding beneath the film. When depositing Pd onto the same SiO2/Ru model support via adsorption of [Pd(NH3)4]Cl2 from alkaline (pH 12) precursor solution, we observe notably different adsorption and nucleation mechanisms. The resultant Pd adsorption complexes follow established decomposition pathways to produce model catalyst systems compatible with those created exclusively within UHV despite lacking the ability to penetrate the film due to the increased size of the initial Pd precursor groups.

  13. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors

    NASA Astrophysics Data System (ADS)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-10-01

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02987e

  14. Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: An Azimuthal RHEED Approach.

    PubMed

    Lu, Zonghuan; Sun, Xin; Xiang, Yu; Washington, Morris A; Wang, Gwo-Ching; Lu, Toh-Ming

    2017-07-12

    The symmetry of graphene is usually determined by a low-energy electron diffraction (LEED) method when the graphene is on the conductive substrates, but LEED cannot handle graphene transferred to SiO2/Si substrates due to the charging effect. While transmission electron microscopy can generate electron diffraction on post-transferred graphene, this method is too localized. Herein, we employed an azimuthal reflection high-energy electron diffraction (RHEED) method to construct the reciprocal space mapping and determine the symmetry of wafer-size graphene both pre- and post-transfer. In this work, single-crystalline Cu(111) films were prepared on sapphire(0001) and spinel(111) substrates with sputtering. Then the graphene was epitaxially grown on single-crystalline Cu(111) films with a low pressure chemical vapor deposition. The reciprocal space mapping using azimuthal RHEED confirmed that the graphene grown on Cu(111) films was single-crystalline, no matter the form of the monolayer or multilayer structure. While the Cu(111) film grown on sapphire(0001) may occasionally consist of 60° in-plane rotational twinning, the reciprocal space mapping revealed that the in-plane orientation of graphene grown atop was not affected. The proposed method for checking the crystalline integrity of the post-transferred graphene sheets is an important step in the realization of the graphene as a platform to fabricate electronic and optoelectronic devices.

  15. Development of nano SiO2 incorporated nano zinc phosphate coatings on mild steel

    NASA Astrophysics Data System (ADS)

    Tamilselvi, M.; Kamaraj, P.; Arthanareeswari, M.; Devikala, S.; Selvi, J. Arockia

    2015-03-01

    This paper reports the development of nano SiO2 incorporated nano zinc phosphate coatings on mild steel at low temperature for achieving better corrosion protection. A new formulation of phosphating bath at low temperature with nano SiO2 was attempted to explore the possibilities of development of nano zinc phosphate coatings on mild steel with improved corrosion resistance. The coatings developed were studied by Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Electrochemical measurements. Significant variation in the coating weight, morphology and corrosion resistance was observed as nano SiO2 concentrations varied from 0.5-4 g/L. The results showed that, the nano SiO2 in the phosphating solution changed the initial potential of the interface between mild steel substrate and phosphating solution and reduce the activation energy of the phosphating process, increase the nucleation sites and yielded zinc phosphate coatings of higher coating weight, greater surface coverage and enhanced corrosion resistance. Better corrosion resistance was observed for coatings derived from phosphating bath containing 1.5 g/L nano SiO2. The new formulation reported in the present study was free from Ni or Mn salts and had very low concentration of sodium nitrite (0.4 g/L) as accelerator.

  16. Superamphiphobic surfaces constructed by cross-linked hollow SiO2 spheres

    NASA Astrophysics Data System (ADS)

    Cui, Weihao; Wang, Tao; Yan, Aili; Wang, Sheng

    2017-04-01

    By using stringed carbon spheres as template material, a series of hierarchical 3D cross-linked SiO2 coated carbon spheres and hollow SiO2 spheres were fabricated, and spray-coated on glass slides, followed by the fluorination treatment with per-fluorotrichlorosilane. The surface characterization and surface wettability data indicated that hollow SiO2 spheres spray-coated surfaces showed better superhydrophobicity and superoleophobcity properties than the corresponding solid C@SiO2 coated surface. This study further demonstrated that superamphiphobicity depends on two critical factors, namely a cavity- and spot-rich hierarchical structure and the size and shape of overhangs. Moreover, the optimal conditions for the preparation of hollow SiO2 coated glass slide were identified after a systematic investigation of various concentrations of the carbon precursor and tetraethylorthosilicate. It was found that when 0.10 g carbon spheres prepared from 1.0 M carbon precursor were used as the template and 20 mg/mL tetraethylorthosilicate was used as silica precursor, the hollow SiO2 coated glass slide exhibited the best superamphiphobic performance, with the highest contact angles and lowest sliding angles for various liquids, such as water, olive oil, n-hexadecane and n-dodecane.

  17. Tribological properties and lubricating mechanism of SiO2 nanoparticles in water-based fluid

    NASA Astrophysics Data System (ADS)

    Bao, Y. Y.; Sun, J. L.; Kong, L. H.

    2017-03-01

    The tribological properties of surface modified SiO2 nanoparticles suspension in water-based lubricant have been studied. SiO2 (30 nm) nanoparticles were dispersed through surface modification with polyethylene glycol-200. Transmission electron microscope (TEM) and infrared (IR) spectroscopy show that SiO2 nanoparticles disperse well and stably in the water-based lubricant. The diameter of the nanoparticles is about 60 nm. Tribological properties of the water-based lubricant were evaluated using four-ball wear test machine and pin-on-disk tester under different loads and different concentrations of SiO2 nanoparticles. Wear surface morphology, element chemistry configuration of steel balls and steel rings were studied by means of X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Results show that the tribological properties of the water-based fluid have been improved by addition of nanoparticles ranging from 0.1% to 0.3% concentrations. SiO2 nanoparticles deposited onto the wear surface during the sliding, which helped to reduce the friction coefficients and increase the anti-wear properties due to the miniature ball bearing effect and self-repairing performance of nanoparticles between the friction pairs. With the increase of test load, the friction coefficients decrease but the wear of the surface increase.

  18. Relaxation Properties of Single Layer Graphene on SiO2 Substrate.

    PubMed

    Wang, Weidong; Li, Shuai; Min, Jiaojiao; Shen, Cuili

    2015-04-01

    The relaxation properties of single layer graphene sheet on the SiO2 substrate are investigated through molecular dynamics simulation technique in this article. The graphene sheet models with different aspect ratios on SiO2 substrate are established and sufficiently relaxed at different thermodynamic temperatures. Subsequently, the morphology, equilibrium position and undulation of graphene on SiO2 substrate are discussed. It is observed that after sufficient relaxation processes, all the graphene sheets are adsorbed on SiO2 substrates and have some certain degree of undulations both on the edge and in the inner surface rather than perfect planar structures. Further observation from the simulation results shows that with different initial distances between the graphene sheet and SiO2 substrate, the graphene sheet would eventually stabilize to an identical equilibrium level at the same temperature. In addition, the final average distance between the graphene sheet and the substrate is a constant of 3.44 A at 0.01 K, in close proximity to the value of parameter r in Lennard-Jones potential function, and the higher the temperature is, the larger the final distance becomes. The results also indicate that for the same size of the graphene sheet, the increasing of temperature significantly aggravates the undulation of graphene sheet. With the increase of aspect ratios, the undulation of the graphene sheet is also aggravated, even the graphene sheet would crimp to a certain extent.

  19. Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

    PubMed

    Tseng, Kuang-Hung; Chen, Kuan-Lung

    2012-08-01

    This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

  20. Casimir frictional drag force between a SiO2 tip and a graphene-covered SiO2 substrate

    NASA Astrophysics Data System (ADS)

    Volokitin, A. I.

    2016-12-01

    The possibility of the mechanical detection of the Casimir friction using noncontact force microscope is discussed. On a SiO2 tip situated above a graphene-covered SiO2 substrate will act the frictional drag force mediated by a fluctuating electromagnetic field produced by a current in the graphene sheet. This friction force will produce the bending of the cantilever, which can be measured by state-of-art noncontact force microscope. Both the thermal and quantum contributions to the Casimir frictional drag force can be studied using this experimental setup. This result paves the way for the mechanical detection of the Casimir friction and for the application of the frictional drag effect in micro- and nanoelectromechanical devices (MEMS and NEMS).