Radiation-Hardened Solid-State Drive

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.

2010-01-01

A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

Real-Time Environmental Artic Monitoring (R-TEAM).

DTIC Science & Technology

1987-11-01

critical points of the mooring. Tension, tilt, pressure and temperature data are recorded on solid state memory for the duration of the deployment. Two...To iUe Tna£ LA6aksIIorZ. Um DESCaiPTiow r oj.t.TAK 2ALUMINUM PIPE -ob.I’ -WALL. 5e1 . Sm IVI IlSdh7 Z BOT’TOM END CAPME G,15473 (5 2 R.OD 3__ MX 306 as...described in Reference 2. Each instrument, located at a critical point of the mooring, measures and records in solid state memory tension, tilt, temperature

Programmable Analog Memory Resistors For Electronic Neural Networks

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni; Thakoor, Sarita; Daud, Taher; Thakoor, Anilkumar P.

1990-01-01

Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.

Technique for improving solid state mosaic images

NASA Technical Reports Server (NTRS)

Saboe, J. M.

1969-01-01

Method identifies and corrects mosaic image faults in solid state visual displays and opto-electronic presentation systems. Composite video signals containing faults due to defective sensing elements are corrected by a memory unit that contains the stored fault pattern and supplies the appropriate fault word to the blanking circuit.

Ultra-High Density Holographic Memory Module with Solid-State Architecture

NASA Technical Reports Server (NTRS)

Markov, Vladimir B.

2000-01-01

NASA's terrestrial. space, and deep-space missions require technology that allows storing. retrieving, and processing a large volume of information. Holographic memory offers high-density data storage with parallel access and high throughput. Several methods exist for data multiplexing based on the fundamental principles of volume hologram selectivity. We recently demonstrated that a spatial (amplitude-phase) encoding of the reference wave (SERW) looks promising as a way to increase the storage density. The SERW hologram offers a method other than traditional methods of selectivity, such as spatial de-correlation between recorded and reconstruction fields, In this report we present the experimental results of the SERW-hologram memory module with solid-state architecture, which is of particular interest for space operations.

Expanded interleaved solid-state memory for a wide bandwidth transient waveform recorder

NASA Technical Reports Server (NTRS)

Thomas, R. M., Jr.

1980-01-01

An interleaved, solid state expanded memory for a 100 MHz bandwidth waveform recorder is described. The memory development resulted in a significant increase in the storage capacity of a commercially available recorder. The motivation for the memory expansion of the waveform recorder, which is used to support in-flight measurement of the electromagnetic characteristics of lightning discharges, was the need for a significantly longer data window than that provided by the commercially available unit. The expanded recorder provides a data window that is 128 times longer than the commercial unit, while maintaining the same time resolution, by increasing the storage capacity from 1024 to 131 072 data samples. The expanded unit operates at sample periods as small as 10 ns. Sampling once every 10 ns, the commercial unit records for about 10 microseconds before the memory is filled, whereas, the expanded unit records for about 1300 microseconds. A photo of the expanded waveform recorder is shown.

Protecting solid-state spins from a strongly coupled environment

NASA Astrophysics Data System (ADS)

Chen, Mo; Calvin Sun, Won Kyu; Saha, Kasturi; Jaskula, Jean-Christophe; Cappellaro, Paola

2018-06-01

Quantum memories are critical for solid-state quantum computing devices and a good quantum memory requires both long storage time and fast read/write operations. A promising system is the nitrogen-vacancy (NV) center in diamond, where the NV electronic spin serves as the computing qubit and a nearby nuclear spin as the memory qubit. Previous works used remote, weakly coupled 13C nuclear spins, trading read/write speed for long storage time. Here we focus instead on the intrinsic strongly coupled 14N nuclear spin. We first quantitatively understand its decoherence mechanism, identifying as its source the electronic spin that acts as a quantum fluctuator. We then propose a scheme to protect the quantum memory from the fluctuating noise by applying dynamical decoupling on the environment itself. We demonstrate a factor of 3 enhancement of the storage time in a proof-of-principle experiment, showing the potential for a quantum memory that combines fast operation with long coherence time.

Emulating short-term synaptic dynamics with memristive devices

NASA Astrophysics Data System (ADS)

Berdan, Radu; Vasilaki, Eleni; Khiat, Ali; Indiveri, Giacomo; Serb, Alexandru; Prodromakis, Themistoklis

2016-01-01

Neuromorphic architectures offer great promise for achieving computation capacities beyond conventional Von Neumann machines. The essential elements for achieving this vision are highly scalable synaptic mimics that do not undermine biological fidelity. Here we demonstrate that single solid-state TiO2 memristors can exhibit non-associative plasticity phenomena observed in biological synapses, supported by their metastable memory state transition properties. We show that, contrary to conventional uses of solid-state memory, the existence of rate-limiting volatility is a key feature for capturing short-term synaptic dynamics. We also show how the temporal dynamics of our prototypes can be exploited to implement spatio-temporal computation, demonstrating the memristors full potential for building biophysically realistic neural processing systems.

Ferroelectric memory evaluation and development system

NASA Astrophysics Data System (ADS)

Bondurant, David W.

Attention is given to the Ramtron FEDS-1, an IBM PC/AT compatible single-board 16-b microcomputer with 8-kbyte program/data memory implemented with nonvolatile ferroelectric dynamic RAM. This is the first demonstration of a new type of solid state nonvolatile read/write memory, the ferroelectric RAM (FRAM). It is suggested that this memory technology will have a significant impact on avionics system performance and reliability.

The robot's eyes - Stereo vision system for automated scene analysis

NASA Technical Reports Server (NTRS)

Williams, D. S.

1977-01-01

Attention is given to the robot stereo vision system which maintains the image produced by solid-state detector television cameras in a dynamic random access memory called RAPID. The imaging hardware consists of sensors (two solid-state image arrays using a charge injection technique), a video-rate analog-to-digital converter, the RAPID memory, and various types of computer-controlled displays, and preprocessing equipment (for reflexive actions, processing aids, and object detection). The software is aimed at locating objects and transversibility. An object-tracking algorithm is discussed and it is noted that tracking speed is in the 50-75 pixels/s range.

Correlated resistive/capacitive state variability in solid TiO2 based memory devices

NASA Astrophysics Data System (ADS)

Li, Qingjiang; Salaoru, Iulia; Khiat, Ali; Xu, Hui; Prodromakis, Themistoklis

2017-05-01

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

Performance analysis of three-dimensional-triple-level cell and two-dimensional-multi-level cell NAND flash hybrid solid-state drives

NASA Astrophysics Data System (ADS)

Sakaki, Yukiya; Yamada, Tomoaki; Matsui, Chihiro; Yamaga, Yusuke; Takeuchi, Ken

2018-04-01

In order to improve performance of solid-state drives (SSDs), hybrid SSDs have been proposed. Hybrid SSDs consist of more than two types of NAND flash memories or NAND flash memories and storage-class memories (SCMs). However, the cost of hybrid SSDs adopting SCMs is more expensive than that of NAND flash only SSDs because of the high bit cost of SCMs. This paper proposes unique hybrid SSDs with two-dimensional (2D) horizontal multi-level cell (MLC)/three-dimensional (3D) vertical triple-level cell (TLC) NAND flash memories to achieve higher cost-performance. The 2D-MLC/3D-TLC hybrid SSD achieves up to 31% higher performance than the conventional 2D-MLC/2D-TLC hybrid SSD. The factors of different performance between the proposed hybrid SSD and the conventional hybrid SSD are analyzed by changing its block size, read/write/erase latencies, and write unit of 3D-TLC NAND flash memory, by means of a transaction-level modeling simulator.

Co-design of application software and NAND flash memory in solid-state drive for relational database storage system

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Sun, Chao; Soga, Ayumi; Takeuchi, Ken

2014-01-01

A relational database management system (RDBMS) is designed based on NAND flash solid-state drive (SSD) for storage. By vertically integrating the storage engine (SE) and the flash translation layer (FTL), system performance is maximized and the internal SSD overhead is minimized. The proposed RDBMS SE utilizes physical information about the NAND flash memory which is supplied from the FTL. The query operation is also optimized for SSD. By these treatments, page-copy-less garbage collection is achieved and data fragmentation in the NAND flash memory is suppressed. As a result, RDBMS performance increases by 3.8 times, power consumption of SSD decreases by 46% and SSD life time is increased by 61%. The effectiveness of the proposed scheme increases with larger erase block sizes, which matches the future scaling trend of three-dimensional (3D-) NAND flash memories. The preferable row data size of the proposed scheme is below 500 byte for 16 kbyte page size.

Tunable Solid-State Quantum Memory Using Rare-Earth-Ion-Doped Crystal, Nd(3+):GaN

DTIC Science & Technology

2017-04-01

by plasma-assisted molecular beam epitaxy in a modular Gen II reactor using liquid gallium, solid Nd, and a nitrogen plasma. The photoluminescence (PL...provide a tunable memory. To vary the applied field, we designed and grew a series of Nd-doped GaN p-i-n structures, strain- balanced superlattice...27 Fig. 23 Electric field vs. GaN well/ AlxGa(1-x)N barrier thickness for strain- balanced superlattice (SBSL) structures with

Extended papers selected from ESSDERC 2015

NASA Astrophysics Data System (ADS)

Grasser, Tibor; Schmitz, Jurriaan; Lemme, Max C.

2016-11-01

This special issue of Solid State Electronics includes 28 papers which have been carefully selected from the best presentations given at the 45th European Solid-State Device Research Conference (ESSDERC 2015) held from September 14-18, 2015 in Graz, Austria. These papers cover a wide range of topics related to the research on solid-state devices. These topics are used also to organize the conference submissions and presentations into 7 tracks: CMOS Processes, Devices and Integration; Opto-, Power- and Microwave Devices; Modeling & Simulation; Characterization, Reliability & Yield; Advanced & Emerging Memories; MEMS, Sensors & Display Technologies; Emerging Non-CMOS Devices & Technologies.

Transferring multiqubit entanglement onto memory qubits in a decoherence-free subspace

NASA Astrophysics Data System (ADS)

He, Xiao-Ling; Yang, Chui-Ping

2017-03-01

Different from the previous works on generating entangled states, this work is focused on how to transfer the prepared entangled states onto memory qubits for protecting them against decoherence. We here consider a physical system consisting of n operation qubits and 2 n memory qubits placed in a cavity or coupled to a resonator. A method is presented for transferring n-qubit Greenberger-Horne-Zeilinger (GHZ) entangled states from the operation qubits (i.e., information processing cells) onto the memory qubits (i.e., information memory elements with long decoherence time). The transferred GHZ states are encoded in a decoherence-free subspace against collective dephasing and thus can be immune from decoherence induced by a dephasing environment. In addition, the state transfer procedure has nothing to do with the number of qubits, the operation time does not increase with the number of qubits, and no measurement is needed for the state transfer. This proposal can be applied to a wide range of hybrid qubits such as natural atoms and artificial atoms (e.g., various solid-state qubits).

A motionless actuation system for magnetic shape memory devices

NASA Astrophysics Data System (ADS)

Armstrong, Andrew; Finn, Kevin; Hobza, Anthony; Lindquist, Paul; Rafla, Nader; Müllner, Peter

2017-10-01

Ni-Mn-Ga is a Magnetic Shape Memory (MSM) alloy that changes shape in response to a variable magnetic field. We can intentionally manipulate the shape of the material to function as an actuator, and the material can thus replace complicated small electromechanical systems. In previous work, a very simple and precise solid-state micropump was developed, but a mechanical rotation was required to translate the position of the magnetic field. This mechanical rotation defeats the purpose of the motionless solid-state device. Here we present a solid-state electromagnetic driver to linearly progress the position of the applied magnetic field and the associated shrinkage. The generated magnetic field was focused at either of two pole pieces, providing a mechanism for moving the localized shrinkage in the MSM element. We confirmed that our driver has sufficient strength to actuate the MSM element using optical microscopy. We validated the whole design by comparing results obtained with finite element analysis with the experimentally measured flux density. This drive system serves as a possible replacement to the mechanical rotation of the magnetic field by using a multi-pole electromagnet that sweeps the magnetic field across the MSM micropump element, solid-state switching the current to each pole piece in the multi-pole electromagnet.

An automatic analyzer of solid state nuclear track detectors using an optic RAM as image sensor

NASA Astrophysics Data System (ADS)

Staderini, Enrico Maria; Castellano, Alfredo

1986-02-01

An optic RAM is a conventional digital random access read/write dynamic memory device featuring a quartz windowed package and memory cells regularly ordered on the chip. Such a device is used as an image sensor because each cell retains data stored in it for a time depending on the intensity of the light incident on the cell itself. The authors have developed a system which uses an optic RAM to acquire and digitize images from electrochemically etched CR39 solid state nuclear track detectors (SSNTD) in the track count rate up to 5000 cm -2. On the digital image so obtained, a microprocessor, with appropriate software, performs image analysis, filtering, tracks counting and evaluation.

Excited-State Spin Manipulation and Intrinsic Nuclear Spin Memory using Single Nitrogen-Vacancy Centers in Diamond

NASA Astrophysics Data System (ADS)

Fuchs, Gregory

2011-03-01

Nitrogen vacancy (NV) center spins in diamond have emerged as a promising solid-state system for quantum information processing and precision metrology at room temperature. Understanding and developing the built-in resources of this defect center for quantum logic and memory is critical to achieving these goals. In the first case, we use nanosecond duration microwave manipulation to study the electronic spin of single NV centers in their orbital excited-state (ES). We demonstrate ES Rabi oscillations and use multi-pulse resonant control to differentiate between phonon-induced dephasing, orbital relaxation, and coherent electron-nuclear interactions. A second resource, the nuclear spin of the intrinsic nitrogen atom, may be an ideal candidate for a quantum memory due to both the long coherence of nuclear spins and their deterministic presence. We investigate coherent swaps between the NV center electronic spin state and the nuclear spin state of nitrogen using Landau-Zener transitions performed outside the asymptotic regime. The swap gates are generated using lithographically fabricated waveguides that form a high-bandwidth, two-axis vector magnet on the diamond substrate. These experiments provide tools for coherently manipulating and storing quantum information in a scalable solid-state system at room temperature. We gratefully acknowledge support from AFOSR, ARO, and DARPA.

Complete tomography of a high-fidelity solid-state entangled spin-photon qubit pair.

PubMed

De Greve, Kristiaan; McMahon, Peter L; Yu, Leo; Pelc, Jason S; Jones, Cody; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2013-01-01

Entanglement between stationary quantum memories and photonic qubits is crucial for future quantum communication networks. Although high-fidelity spin-photon entanglement was demonstrated in well-isolated atomic and ionic systems, in the solid-state, where massively parallel, scalable networks are most realistically conceivable, entanglement fidelities are typically limited due to intrinsic environmental interactions. Distilling high-fidelity entangled pairs from lower-fidelity precursors can act as a remedy, but the required overhead scales unfavourably with the initial entanglement fidelity. With spin-photon entanglement as a crucial building block for entangling quantum network nodes, obtaining high-fidelity entangled pairs becomes imperative for practical realization of such networks. Here we report the first results of complete state tomography of a solid-state spin-photon-polarization-entangled qubit pair, using a single electron-charged indium arsenide quantum dot. We demonstrate record-high fidelity in the solid-state of well over 90%, and the first (99.9%-confidence) achievement of a fidelity that will unambiguously allow for entanglement distribution in solid-state quantum repeater networks.

Modular nonvolatile solid state recorder (MONSSTR) update

NASA Astrophysics Data System (ADS)

Klang, Mark R.; Small, Martin B.; Beams, Tom

2001-12-01

Solid state recorders have begun replacing traditional tape recorders in fulfilling the requirement to record images on airborne platforms. With the advances in electro-optical, IR, SAR, Multi and Hyper-spectral sensors and video recording requirements, solid state recorders have become the recorder of choice. Solid state recorders provide the additional storage, higher sustained bandwidth, less power, less weight and smaller footprint to meet the current and future recording requirements. CALCULEX, Inc., manufactures a non-volatile flash memory solid state recorder called the MONSSTR (Modular Non-volatile Solid State Recorder). MONSSTR is being used to record images from many different digital sensors on high performance aircraft such as the RF- 4, F-16 and the Royal Air Force Tornado. MONSSTR, with its internal multiplexer, is also used to record instrumentation data. This includes multiple streams of PCM and multiple channels of 1553 data. Instrumentation data is being recorded by MONSSTR systems in a range of platforms including F-22, F-15, F-16, Comanche Helicopter and US Navy torpedos. MONSSTR can also be used as a cockpit video recorder. This paper will provide an update of the MONSSTR.

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyazono, Evan; Zhong, Tian; Craiciu, Ioana

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

Coherent Spin Control at the Quantum Level in an Ensemble-Based Optical Memory.

PubMed

Jobez, Pierre; Laplane, Cyril; Timoney, Nuala; Gisin, Nicolas; Ferrier, Alban; Goldner, Philippe; Afzelius, Mikael

2015-06-12

Long-lived quantum memories are essential components of a long-standing goal of remote distribution of entanglement in quantum networks. These can be realized by storing the quantum states of light as single-spin excitations in atomic ensembles. However, spin states are often subjected to different dephasing processes that limit the storage time, which in principle could be overcome using spin-echo techniques. Theoretical studies suggest this to be challenging due to unavoidable spontaneous emission noise in ensemble-based quantum memories. Here, we demonstrate spin-echo manipulation of a mean spin excitation of 1 in a large solid-state ensemble, generated through storage of a weak optical pulse. After a storage time of about 1 ms we optically read-out the spin excitation with a high signal-to-noise ratio. Our results pave the way for long-duration optical quantum storage using spin-echo techniques for any ensemble-based memory.

Nanophotonic rare-earth quantum memory with optically controlled retrieval

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan M.; Bartholomew, John G.; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D.; Beyer, Andrew D.; Faraon, Andrei

2017-09-01

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes.

Packaging of a large capacity magnetic bubble domain spacecraft recorder

NASA Technical Reports Server (NTRS)

Becker, F. J.; Stermer, R. L.

1977-01-01

A Solid State Spacecraft Data Recorder (SSDR), based on bubble domain technology, having a storage capacity of 10 to the 8th power bits, was designed and is being tested. The recorder consists of two memory modules each having 32 cells, each cell containing sixteen 100 kilobit serial bubble memory chips. The memory modules are interconnected to a Drive and Control Unit (DCU) module containing four microprocessors, 500 integrated circuits, a RAM core memory and two PROM's. The two memory modules and DCU are housed in individual machined aluminum frames, are stacked in brick fashion and through bolted to a base plate assembly which also houses the power supply.

Solid state recording current meter conversion

USGS Publications Warehouse

Cheng, Ralph T.; Wang, Lichen

1985-01-01

The authors describe the conversion of an Endeco-174 current meter to a solid-state recording current meter. A removable solid-state module was designed to fit in the space originally occupied by an 8-track tape cartridge. The module contains a CPU and 128 kilobytes of nonvolatile CMOS memory. The solid-state module communicates with any terminal or computer using an RS-232C interface at 4800 baud rate. A primary consideration for conversion was to keep modifications of the current meter to a minimum. The communication protocol was designed to emulate the Endeco tape translation unit, thus the need for a translation unit was eliminated and the original data reduction programs can be used without any modification. After conversion, the data recording section of the current meter contains no moving parts; the storage capacity of the module is equivalent to that of the original tape cartridge.

Quantum entanglement between an optical photon and a solid-state spin qubit.

PubMed

Togan, E; Chu, Y; Trifonov, A S; Jiang, L; Maze, J; Childress, L; Dutt, M V G; Sørensen, A S; Hemmer, P R; Zibrov, A S; Lukin, M D

2010-08-05

Quantum entanglement is among the most fascinating aspects of quantum theory. Entangled optical photons are now widely used for fundamental tests of quantum mechanics and applications such as quantum cryptography. Several recent experiments demonstrated entanglement of optical photons with trapped ions, atoms and atomic ensembles, which are then used to connect remote long-term memory nodes in distributed quantum networks. Here we realize quantum entanglement between the polarization of a single optical photon and a solid-state qubit associated with the single electronic spin of a nitrogen vacancy centre in diamond. Our experimental entanglement verification uses the quantum eraser technique, and demonstrates that a high degree of control over interactions between a solid-state qubit and the quantum light field can be achieved. The reported entanglement source can be used in studies of fundamental quantum phenomena and provides a key building block for the solid-state realization of quantum optical networks.

Microchannel detector array for X-rays and UV

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1976-01-01

Device employs sensitive photoelectric electrodes and solid-state memory, can be used at visible UV and X ray wavelengths, includes nonmagnetic proximity focusing, and is immune to high energy charged-particle background.

Transitional circuitry for studying the properties of DNA

NASA Astrophysics Data System (ADS)

Trubochkina, N.

2018-01-01

The article is devoted to a new view of the structure of DNA as an intellectual scheme possessing the properties of logic and memory. The theory of transient circuitry, developed by the author for optimal computer circuits, revealed an amazing structural similarity between mathematical models of transition silicon elements and logic and memory circuits of solid state transient circuitry and atomic models of parts of DNA.

The elastocaloric effect of Ni50.8Ti49.2 shape memory alloys

NASA Astrophysics Data System (ADS)

Zhou, Min; Li, Yushuang; Zhang, Chen; Li, Shaojie; Wu, Erfu; Li, Wei; Li, Laifeng

2018-04-01

Solid-state cooling technologies are considered as possible alternatives for vapor compression cooling systems. The elastocaloric cooling (whose caloric effects are driven by uniaxial stress) technology, as an efficient and clean solid-state cooling technology, is receiving a great deal of attention very recently. Herein, a NiTi-based elastocaloric bulk material was reported. A large coefficient-of-performance of the material (COPmater) of 4.5 was obtained, which was even higher than that of other NiTi bulk materials. The temperature changes (ΔT) increased with increasing applied strain (ɛ), and reached 18 K upon loading and  -11 K upon unloading when the ɛ value increased to 4%. The high temperature changes were attributed to the large stress-induced entropy changes (the maximum ΔS σ value was 37 J kg-1 K-1). The temperature changes decreased with loading-unloading tensile cycles, and stabilized at 6.5 K upon loading and  -6 K upon unloading after tens of mechanical cycles. The Ni50.8Ti49.2 shape memory alloy showed great promise for application in solid-state refrigeration (or as heat pumps).

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials.

PubMed

Li, Yang; Li, Hua; He, Jinghui; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

2016-03-18

The practical application of organic memory devices requires low power consumption and reliable device quality. Herein, we report that inserting thienyl units into D-π-A molecules can improve these parameters by tuning the texture of the film. Theoretical calculations revealed that introducing thienyl π bridges increased the planarity of the molecular backbone and extended the D-A conjugation. Thus, molecules with more thienyl spacers showed improved stacking and orientation in the film state relative to the substrates. The corresponding sandwiched memory devices showed enhanced ternary memory behavior, with lower threshold voltages and better repeatability. The conductive switching and variation in the performance of the memory devices were interpreted by using an extended-charge-trapping mechanism. Our study suggests that judicious molecular engineering can facilitate control of the orientation of the crystallite in the solid state to achieve superior multilevel memory performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of bubble memory recorder onboard Japan Earth Resources Satellite-1

NASA Astrophysics Data System (ADS)

Araki, Tsunehiko; Ishida, Chu; Ochiai, Kiyoshi; Nozue, Tatsuhiro; Tachibana, Kyozo; Yoshida, Kazutoshi

The Bubble Memory Recorder (BMR) developed for use on the Earth Resources Satellite is described in terms of its design, capabilities, and functions. The specifications of the BMR are given listing memory capacity, functions, and interface types for data, command, and telemetry functions. The BMR has an emergency signal interface to provide contingency recording, and a satellite-separation signal interface can be turned on automatically by signal input. Data are stored in a novolatile memory device so that the memory is retained during power outages. The BMR is characterized by a capability for random access, nonvolatility, and a solid-state design that is useful for space operations since it does not disturb spacecraft attitude.

Application of the endochronic theory of viscoplasticity to solid propellants and sandasphalt concrete

NASA Technical Reports Server (NTRS)

Peng, S. T. J.; Valanis, K. C.

1977-01-01

Solid propellants, sand-asphalt concrete and hard plastics showed rate sensitive mechanical behavior which, in addition, indicated that these materials have a permanent memory of the strain (or loading) path by which their present state was attained. A constitutive equation was formulated in general three dimensional tensorial form by means of irreversible thermodynamics. By using a very simple analytical form, it was shown that the mechanical behavior of solid propellants and sand-asphalt concrete can be readily described.

Ion conduction in crystalline superionic solids and its applications

NASA Astrophysics Data System (ADS)

Chandra, Angesh

2014-06-01

Superionic solids an area of multidisciplinary research activity, incorporates to study the physical, chemical and technological aspects of rapid ion movements within the bulk of the special class of ionic materials. It is an emerging area of materials science, as these solids show tremendous technological scopes to develop wide variety of solid state electrochemical devices such as batteries, fuel cells, supercapacitors, sensors, electrochromic displays (ECDs), memories, etc. These devices have wide range of applicabilities viz. power sources for IC microchips to transport vehicles, novel sensors for controlling atmospheric pollution, new kind of memories for computers, smart windows/display panels, etc. The field grew with a rapid pace since then, especially with regards to designing new materials as well as to explore their device potentialities. Amongst the known superionic solids, fast Ag+ ion conducting crystalline solid electrolytes are attracted special attention due to their relatively higher room temperature conductivity as well as ease of materials handling/synthesis. Ion conduction in these electrolytes is very much interesting part of today. In the present review article, the ion conducting phenomenon and some device applications of crystalline/polycrystalline superionic solid electrolytes have been reviewed in brief. Synthesis and characterization tools have also been discussed in the present review article.

Electrically erasable non-volatile memory via electrochemical deposition of multifractal aggregates

NASA Astrophysics Data System (ADS)

West, William Clark

An electrically erasable non-volatile memory system based on the electrochemical deposition of Ag or Cu from a solid electrolyte is presented. This memory system, referred to as Metal Dendrite Memory, is characterized by its simplicity of design and operation, low power consumption, and potentially high cell density. By applying a small DC voltage (2.5-5V) across a Cu or Ag doped As-S amorphous chalcogenide film sandwiched between two metal electrodes, a metal filament can be electrodeposited, shorting the large impedance solid electrolyte ("on" state). Application of smaller amplitude voltage pulses (1-1.5V) across the metal filament ruptures the short, returning the cell to the high impedance state ("off" state). The state of the cell is read by applying very small amplitude voltage pulses (0.25V). These "read" voltage pulses do not disturb the state of the cell even after 10sp7 pulses. Due to difficulties in characterizing this solid electrolyte system via conventional techniques, the MDM cells have been examined using low excitation characterization methods such as Impedance Spectroscopy (IS) and polarization measurements. These studies have yielded a self-consistent equivalent circuit model as well as parameters such as ionic diffusivity and conductivity, double layer and geometric capacitances. In addition to materials characterization, the speed at which the MDM cells operate has been systematically studied using a series of statistically designed experiments, demonstrating the importance of photodoping time and applied voltage on device speed. These results were further examined using IS and Rutherford Backscattering Spectrometry (RBS). The morphology of the growing electrodeposit was studied in several different electrode arrangements and excitation conditions. Under migrationally limited conditions, the electrodeposit grew in multifractal patterns, as measured using lacunarity analysis. If a conducting film was deposited parallel to the growth direction, the electrodeposition could be driven from Diffusion Limited Aggregation (DLA) to Densely Branched Morphology (DBM) modes by changing the voltage applied to the cell. In summary, this study has laid the groundwork for future research and development of MDM memory systems by identifying many important characteristics of the MDM cell. These findings include quantitative measurement of ionic transport values, identification of the electrochemical mechanisms involved in MDM data storage, determination of parameters that are statistically significant in affecting data storage speed, and determination of the effect of cell geometry and bias on electrodeposit morphology.

Nonvolatile Ionic Two-Terminal Memory Device

NASA Technical Reports Server (NTRS)

Williams, Roger M.

1990-01-01

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

CASSIUS: The Cassini Uplink Scheduler

NASA Technical Reports Server (NTRS)

Bellinger, Earl

2012-01-01

The Cassini Uplink Scheduler (CASSIUS) is cross-platform software used to generate a radiation sequence plan for commands being sent to the Cassini spacecraft. Because signals must travel through varying amounts of Earth's atmosphere, several different modes of constant telemetry rates have been devised. These modes guarantee that the spacecraft and the Deep Space Network agree with respect to the data transmission rate. However, the memory readout of a command will be lost if it occurs on a telemetry mode boundary. Given a list of spacecraft message files as well as the available telemetry modes, CASSIUS can find an uplink sequence that ensures safe transmission of each file. In addition, it can predict when the two on-board solid state recorders will swap. CASSIUS prevents data corruption by making sure that commands are not planned for memory readout during telemetry rate changes or a solid state recorder swap.

Tunable ion-photon entanglement in an optical cavity.

PubMed

Stute, A; Casabone, B; Schindler, P; Monz, T; Schmidt, P O; Brandstätter, B; Northup, T E; Blatt, R

2012-05-23

Proposed quantum networks require both a quantum interface between light and matter and the coherent control of quantum states. A quantum interface can be realized by entangling the state of a single photon with the state of an atomic or solid-state quantum memory, as demonstrated in recent experiments with trapped ions, neutral atoms, atomic ensembles and nitrogen-vacancy spins. The entangling interaction couples an initial quantum memory state to two possible light-matter states, and the atomic level structure of the memory determines the available coupling paths. In previous work, the transition parameters of these paths determined the phase and amplitude of the final entangled state, unless the memory was initially prepared in a superposition state (a step that requires coherent control). Here we report fully tunable entanglement between a single (40)Ca(+) ion and the polarization state of a single photon within an optical resonator. Our method, based on a bichromatic, cavity-mediated Raman transition, allows us to select two coupling paths and adjust their relative phase and amplitude. The cavity setting enables intrinsically deterministic, high-fidelity generation of any two-qubit entangled state. This approach is applicable to a broad range of candidate systems and thus is a promising method for distributing information within quantum networks.

Solid state optical microscope

DOEpatents

Young, I.T.

1983-08-09

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal. 2 figs.

Solid-state optical microscope

DOEpatents

Young, I.T.

1981-01-07

A solid state optical microscope is described wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. Means for scanning in one of two orthogonal directions are provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

Solid state optical microscope

DOEpatents

Young, Ian T.

1983-01-01

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the TlInTe2-TlYbTe2 System

NASA Astrophysics Data System (ADS)

Akhmedova, A. M.

2018-04-01

The behavior of an electronic subsystem is investigated in the course of formation and development of a memory channel in solid solutions of the TlInTe2-TlYbTe2 system. An analysis of the current-voltage characteristics allows getting an insight into the reason for a sharp change in electrical conductance of the specimens under study during their transition from the high-resistance to high-conductance state and the reasons for the well known instability of threshold converters, which makes it possible to design devices with high threshold voltage stability.

Non-volatile memory based on the ferroelectric photovoltaic effect

PubMed Central

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Microtraps for neutral atoms using superconducting structures in the critical state

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emmert, A.; Brune, M.; Raimond, J.-M.

Recently demonstrated superconducting atom chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the trapping structures. For type-II superconductors, this distribution is hysteretic in the critical state due to the partial penetration of the magnetic field in the thin superconducting film through pinned vortices. We report here an experimental observation of this memory effect. Our results are in good agreement with the predictions of the Bean model of the critical state without adjustable parameters. The memory effect allows to write and store permanentmore » currents in micron-sized superconducting structures and paves the way toward engineered trapping potentials.« less

Systems Suitable for Information Professionals.

ERIC Educational Resources Information Center

Blair, John C., Jr.

1983-01-01

Describes computer operating systems applicable to microcomputers, noting hardware components, advantages and disadvantages of each system, local area networks, distributed processing, and a fully configured system. Lists of hardware components (disk drives, solid state disk emulators, input/output and memory components, and processors) and…

Quantum storage of a photonic polarization qubit in a solid.

PubMed

Gündoğan, Mustafa; Ledingham, Patrick M; Almasi, Attaallah; Cristiani, Matteo; de Riedmatten, Hugues

2012-05-11

We report on the quantum storage and retrieval of photonic polarization quantum bits onto and out of a solid state storage device. The qubits are implemented with weak coherent states at the single photon level, and are stored for a predetermined time of 500 ns in a praseodymium doped crystal with a storage and retrieval efficiency of 10%, using the atomic frequency comb scheme. We characterize the storage by using quantum state tomography, and find that the average conditional fidelity of the retrieved qubits exceeds 95% for a mean photon number μ=0.4. This is significantly higher than a classical benchmark, taking into account the poissonian statistics and finite memory efficiency, which proves that our crystal functions as a quantum storage device for polarization qubits. These results extend the storage capabilities of solid state quantum light matter interfaces to polarization encoding, which is widely used in quantum information science.

Eight microprocessor-based instrument data systems in the Galileo Orbiter spacecraft

NASA Technical Reports Server (NTRS)

Barry, R. C.

1980-01-01

Instrument data systems consist of a microprocessor, 3K bytes of Read Only Memory and 3K bytes of Random Access Memory. It interfaces with the spacecraft data bus through an isolated user interface with a direct memory access bus adaptor, and/or parallel data from instrument devices such as registers, buffers, analog to digital converters, multiplexers, and solid state sensors. These data systems support the spacecraft hardware and software communication protocol, decode and process instrument commands, generate continuous instrument operating modes, control the instrument mechanisms, acquire, process, format, and output instrument science data.

Potential High-Temperature Shape-Memory Alloys Identified in the Ti(Ni,Pt) System

NASA Technical Reports Server (NTRS)

Noebe, Ronald D.; Biles, Tiffany A.; Garg, Anita; Nathal, Michael V.

2004-01-01

"Shape memory" is a unique property of certain alloys that, when deformed (within certain strain limits) at low temperatures, will remember and recover to their original predeformed shape upon heating. It occurs when an alloy is deformed in the low-temperature martensitic phase and is then heated above its transformation temperature back to an austenitic state. As the material passes through this solid-state phase transformation on heating, it also recovers its original shape. This behavior is widely exploited, near room temperature, in commercially available NiTi alloys for connectors, couplings, valves, actuators, stents, and other medical and dental devices. In addition, there are limitless applications in the aerospace, automotive, chemical processing, and many other industries for materials that exhibit this type of shape-memory behavior at higher temperatures. But for high temperatures, there are currently no commercial shape-memory alloys. Although there are significant challenges to the development of high-temperature shape-memory alloys, at the NASA Glenn Research Center we have identified a series of alloy compositions in the Ti-Ni-Pt system that show great promise as potential high-temperature shape-memory materials.

Materials and other needs for advanced phase change memory (Presentation Recording)

NASA Astrophysics Data System (ADS)

Sosa, Norma E.

2015-09-01

Phase change memory (PCM), with its long history, may now hold its brightest promise to date. This bright future is being fueled by the "push" from big data. PCM is a non-volatile memory technology used to create solid-state random access memory devices that operate based the resistance properties of materials. Employing the electrical resistance differences-as opposed to differences in charge stored-between the amorphous and crystalline phases of the material, PCM can store bits, namely one's and zero's. Indeed, owing to the method of storage, PCM can in fact be designed to hold multiple bits thus leading to a high-density technology twice the storage density and less than half the cost of DRAM, the main kind found in typical personal computers. It has been long known that PCM can fill a need gap that spans 3 decades in performance from DRAM to solid state drive (NAND Flash). Furthermore, PCM devices can lead to performance and reliability improvements essential to enabling significant steps forward to supporting big data centric computing. This talk will focus on the science and challenges of aggressive scaling to realize the density needed, how this scaling challenge is intertwined with materials needs for endurance into the giga-cycles, and the associated forefront research aiming to realizing multi-level functionality into these nanoscale programmable resistor devices.

Towards self-correcting quantum memories

NASA Astrophysics Data System (ADS)

Michnicki, Kamil

This thesis presents a model of self-correcting quantum memories where quantum states are encoded using topological stabilizer codes and error correction is done using local measurements and local dynamics. Quantum noise poses a practical barrier to developing quantum memories. This thesis explores two types of models for suppressing noise. One model suppresses thermalizing noise energetically by engineering a Hamiltonian with a high energy barrier between code states. Thermalizing dynamics are modeled phenomenologically as a Markovian quantum master equation with only local generators. The second model suppresses stochastic noise with a cellular automaton that performs error correction using syndrome measurements and a local update rule. Several ways of visualizing and thinking about stabilizer codes are presented in order to design ones that have a high energy barrier: the non-local Ising model, the quasi-particle graph and the theory of welded stabilizer codes. I develop the theory of welded stabilizer codes and use it to construct a code with the highest known energy barrier in 3-d for spin Hamiltonians: the welded solid code. Although the welded solid code is not fully self correcting, it has some self correcting properties. It has an increased memory lifetime for an increased system size up to a temperature dependent maximum. One strategy for increasing the energy barrier is by mediating an interaction with an external system. I prove a no-go theorem for a class of Hamiltonians where the interaction terms are local, of bounded strength and commute with the stabilizer group. Under these conditions the energy barrier can only be increased by a multiplicative constant. I develop cellular automaton to do error correction on a state encoded using the toric code. The numerical evidence indicates that while there is no threshold, the model can extend the memory lifetime significantly. While of less theoretical importance, this could be practical for real implementations of quantum memories. Numerical evidence also suggests that the cellular automaton could function as a decoder with a soft threshold.

Bubble memory module for spacecraft application

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Looney, K. T.; Nichols, C. D.

1985-01-01

Bubble domain technology offers an all-solid-state alternative for data storage in onboard data systems. A versatile modular bubble memory concept was developed. The key module is the bubble memory module which contains all of the storage devices and circuitry for accessing these devices. This report documents the bubble memory module design and preliminary hardware designs aimed at memory module functional demonstration with available commercial bubble devices. The system architecture provides simultaneous operation of bubble devices to attain high data rates. Banks of bubble devices are accessed by a given bubble controller to minimize controller parts. A power strobing technique is discussed which could minimize the average system power dissipation. A fast initialization method using EEPROM (electrically erasable, programmable read-only memory) devices promotes fast access. Noise and crosstalk problems and implementations to minimize these are discussed. Flight memory systems which incorporate the concepts and techniques of this work could now be developed for applications.

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

NASA Astrophysics Data System (ADS)

Wu, Chi-Chang; Hsiao, Yu-Ping; You, Hsin-Chiang; Lin, Guan-Wei; Kao, Min-Fang; Manga, Yankuba B.; Yang, Wen-Luh

2018-02-01

We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the resistive layer. In this study, the chain distance and number of chain stacks of PI molecules are investigated. We employed different solid contents of polyamic acid (PAA) to synthesize various PI films, which served as the resistive layer of ReRAM, the electrical performance of which was evaluated. By tuning the PAA solid content, the intermolecular interaction energy of the PI films is changed without altering the molecular structure. Our results show that the leakage current in the high-resistance state and the memory window of the PI-based ReRAM can be substantially improved using this technique. The superior properties of the PI-based ReRAM are ascribed to fewer molecular chain stacks in the PI films when the PAA solid content is decreased, hence suppressing the leakage current. In addition, a device retention time of more than 107 s can be achieved using this technique. Finally, the conduction mechanism in the PI-based ReRAM was analyzed using hopping and conduction models.

Storing Data and Video on One Tape

NASA Technical Reports Server (NTRS)

Nixon, J. H.; Cater, J. P.

1985-01-01

Microprocessor-based system originally developed for anthropometric research merges digital data with video images for storage on video cassette recorder. Combined signals later retrieved and displayed simultaneously on television monitor. System also extracts digital portion of stored information and transfers it to solid-state memory.

Nature of hardness evolution in nanocrystalline NiTi shape memory alloys during solid-state phase transition

PubMed Central

Amini, Abbas; Cheng, Chun

2013-01-01

Due to a distinct nature of thermomechanical smart materials' reaction to applied loads, a revolutionary approach is needed to measure the hardness and to understand its size effect for pseudoelastic NiTi shape memory alloys (SMAs) during the solid-state phase transition. Spherical hardness is increased with depths during the phase transition in NiTi SMAs. This behaviour is contrary to the decrease in the hardness of NiTi SMAs with depths using sharp tips and the depth-insensitive hardness of traditional metallic alloys using spherical tips. In contrast with the common dislocation theory for the hardness measurement, the nature of NiTi SMAs' hardness is explained by the balance between the interface and the bulk energy of phase transformed SMAs. Contrary to the energy balance in the indentation zone using sharp tips, the interface energy was numerically shown to be less dominant than the bulk energy of the phase transition zone using spherical tips. PMID:23963305

Strongly coupling a cavity to inhomogeneous ensembles of emitters: Potential for long-lived solid-state quantum memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, I.; Portolan, S.; Auffeves, A.

2011-12-15

We investigate theoretically the coupling of a cavity mode to a continuous distribution of emitters. We discuss the influence of the emitters' inhomogeneous broadening on the existence and on the coherence properties of the polaritonic peaks. We find that their coherence depends crucially on the shape of the distribution and not only on its width. Under certain conditions the coupling to the cavity protects the polaritonic states from inhomogeneous broadening, resulting in a longer storage time for a quantum memory based on emitter ensembles. When two different ensembles of emitters are coupled to the resonator, they support a peculiar collectivemore » dark state, which is also very attractive for the storage of quantum information.« less

Modeling the behaviour of shape memory materials under large deformations

NASA Astrophysics Data System (ADS)

Rogovoy, A. A.; Stolbova, O. S.

2017-06-01

In this study, the models describing the behavior of shape memory alloys, ferromagnetic materials and polymers have been constructed, using a formalized approach to develop the constitutive equations for complex media under large deformations. The kinematic and constitutive equations, satisfying the principles of thermodynamics and objectivity, have been derived. The application of the Galerkin procedure to the systems of equations of solid mechanics allowed us to obtain the Lagrange variational equation and variational formulation of the magnetostatics problems. These relations have been tested in the context of the problems of finite deformation in shape memory alloys and ferromagnetic materials during forward and reverse martensitic transformations and in shape memory polymers during forward and reverse relaxation transitions from a highly elastic to a glassy state.

Integrated Vertical Bloch Line (VBL) memory

NASA Technical Reports Server (NTRS)

Katti, R. R.; Wu, J. C.; Stadler, H. L.

1991-01-01

Vertical Bloch Line (VBL) Memory is a recently conceived, integrated, solid state, block access, VLSI memory which offers the potential of 1 Gbit/sq cm areal storage density, data rates of hundreds of megabits/sec, and submillisecond average access time simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of BVL pairs are used to store binary information. At present, efforts are being directed at developing a single chip memory using 25 Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. The current design architecture, functional elements, and supercomputer simulation results are described which are used to assist the design process.

Nanophotonic rare-earth quantum memory with optically controlled retrieval.

PubMed

Zhong, Tian; Kindem, Jonathan M; Bartholomew, John G; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D; Beyer, Andrew D; Faraon, Andrei

2017-09-29

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Thickness effect of nickel oxide thin films on associated solution-processed write-once-read-many-times memory devices

NASA Astrophysics Data System (ADS)

Wang, Xiao Lin; Liu, Zhen; Wen, Chao; Liu, Yang; Wang, Hong Zhe; Chen, T. P.; Zhang, Hai Yan

2018-06-01

With self-prepared nickel acetate based solution, NiO thin films with different thicknesses have been fabricated by spin coating followed by thermal annealing. By forming a two-terminal Ag/NiO/ITO structure on glass, write-once-read-many-times (WORM) memory devices are realized. The WORM memory behavior is based on a permanent switching from an initial high-resistance state (HRS) to an irreversible low-resistance state (LRS) under the application of a writing voltage, due to the formation of a solid bridge across Ag and ITO electrodes by conductive filaments (CFs). The memory performance is investigated as a function of the NiO film thickness, which is determined by the number of spin-coated NiO layers. For devices with 4 and 6 NiO layers, data retention up to 104 s and endurance of 103 reading operations in the measurement range have been obtained with memory window maintained above four orders for both HRS and LRS. Before and after writing, the devices show the hopping and ohmic conduction behaviors, respectively, confirming that the CF formation could be the mechanism responsible for writing in the WORM memory devices.

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

PubMed

Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng

2018-05-30

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10 4 s between these two states with an on/off ratio of 10 4 , and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

Remote quantum entanglement between two micromechanical oscillators.

PubMed

Riedinger, Ralf; Wallucks, Andreas; Marinković, Igor; Löschnauer, Clemens; Aspelmeyer, Markus; Hong, Sungkun; Gröblacher, Simon

2018-04-01

Entanglement, an essential feature of quantum theory that allows for inseparable quantum correlations to be shared between distant parties, is a crucial resource for quantum networks 1 . Of particular importance is the ability to distribute entanglement between remote objects that can also serve as quantum memories. This has been previously realized using systems such as warm 2,3 and cold atomic vapours 4,5 , individual atoms 6 and ions 7,8 , and defects in solid-state systems 9-11 . Practical communication applications require a combination of several advantageous features, such as a particular operating wavelength, high bandwidth and long memory lifetimes. Here we introduce a purely micromachined solid-state platform in the form of chip-based optomechanical resonators made of nanostructured silicon beams. We create and demonstrate entanglement between two micromechanical oscillators across two chips that are separated by 20 centimetres . The entangled quantum state is distributed by an optical field at a designed wavelength near 1,550 nanometres. Therefore, our system can be directly incorporated in a realistic fibre-optic quantum network operating in the conventional optical telecommunication band. Our results are an important step towards the development of large-area quantum networks based on silicon photonics.

Deterministic Generation of All-Photonic Quantum Repeaters from Solid-State Emitters

NASA Astrophysics Data System (ADS)

Buterakos, Donovan; Barnes, Edwin; Economou, Sophia E.

2017-10-01

Quantum repeaters are nodes in a quantum communication network that allow reliable transmission of entanglement over large distances. It was recently shown that highly entangled photons in so-called graph states can be used for all-photonic quantum repeaters, which require substantially fewer resources compared to atomic-memory-based repeaters. However, standard approaches to building multiphoton entangled states through pairwise probabilistic entanglement generation severely limit the size of the state that can be created. Here, we present a protocol for the deterministic generation of large photonic repeater states using quantum emitters such as semiconductor quantum dots and defect centers in solids. We show that arbitrarily large repeater states can be generated using only one emitter coupled to a single qubit, potentially reducing the necessary number of photon sources by many orders of magnitude. Our protocol includes a built-in redundancy, which makes it resilient to photon loss.

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

SSD Market Overview

NASA Astrophysics Data System (ADS)

Wong, G.

The unparalleled cost and form factor advantages of NAND flash memory has driven 35 mm photographic film, floppy disks and one-inch hard drives to extinction. Due to its compelling price/performance characteristics, NAND Flash memory is now expanding its reach into the once-exclusive domain of hard disk drives and DRAM in the form of Solid State Drives (SSDs). Driven by the proliferation of thin and light mobile devices and the need for near-instantaneous accessing and sharing of content through the cloud, SSDs are expected to become a permanent fixture in the computing infrastructure.

Robust dynamical decoupling for quantum computing and quantum memory.

PubMed

Souza, Alexandre M; Alvarez, Gonzalo A; Suter, Dieter

2011-06-17

Dynamical decoupling (DD) is a popular technique for protecting qubits from the environment. However, unless special care is taken, experimental errors in the control pulses used in this technique can destroy the quantum information instead of preserving it. Here, we investigate techniques for making DD sequences robust against different types of experimental errors while retaining good decoupling efficiency in a fluctuating environment. We present experimental data from solid-state nuclear spin qubits and introduce a new DD sequence that is suitable for quantum computing and quantum memory.

Fermi Surface as a Driver for the Shape-Memory Effect in AuZn

NASA Astrophysics Data System (ADS)

Lashley, Jason

2005-03-01

Martensites are materials that undergo diffusionless, solid-state transitions. The martensitic transition yields properties that depend on the history of the material and if reversible can allow it to recover its previous shape after plastic deformation. This is known as the shape-memory effect (SME). We have succeeded in identifying the operative electronic mechanism responsible for the martensitic transition in the shape-memory alloy AuZn by using Fermi-surface measurements (de Haas-van Alphen oscillations) and band-structure calculations. Our findings suggest that electronic band structure gives rise to special features on the Fermi surface that is important to consider in the design of SME alloys.

Faithful Solid State Optical Memory with Dynamically Decoupled Spin Wave Storage

NASA Astrophysics Data System (ADS)

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-01

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

Faithful solid state optical memory with dynamically decoupled spin wave storage.

PubMed

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-12

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

Ultranarrow Optical Inhomogeneous Linewidth in a Stoichiometric Rare-Earth Crystal.

PubMed

Ahlefeldt, R L; Hush, M R; Sellars, M J

2016-12-16

We obtain a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare-earth crystal EuCl_{3}·6H_{2}O by isotopically purifying the crystal in ^{35}Cl. With this linewidth, an important limit for stoichiometric rare-earth crystals is surpassed: the hyperfine structure of ^{153}Eu is spectrally resolved, allowing the whole population of ^{153}Eu^{3+} ions to be prepared in the same hyperfine state using hole-burning techniques. This material also has a very high optical density, and can have long coherence times when deuterated. This combination of properties offers new prospects for quantum information applications. We consider two of these: quantum memories and quantum many-body studies. We detail the improvements in the performance of current memory protocols possible in these high optical depth crystals, and describe how certain memory protocols, such as off-resonant Raman memories, can be implemented for the first time in a solid-state system. We explain how the strong excitation-induced interactions observed in this material resemble those seen in Rydberg systems, and describe how these interactions can lead to quantum many-body states that could be observed using standard optical spectroscopy techniques.

Stabilization of photon collapse and revival dynamics by a non-Markovian phonon bath

NASA Astrophysics Data System (ADS)

Carmele, Alexander; Knorr, Andreas; Milde, Frank

2013-10-01

Solid state-based light emitters such as semiconductor quantum dots (QDs) have been demonstrated to be versatile candidates to study the fundamentals of light-matter interaction. In contrast to optics with isolated atomic systems, in the solid-state dissipative processes are induced by the inherent coupling to the environment and are typically perceived as a major obstacle toward stable performances in experiments and applications. In this theoretical model study we show that this is not necessarily the case. In fact, in certain parameter regimes, the memory of the solid-state environment can enhance coherent quantum optical effects. In particular, we demonstrate that the non-Markovian coupling to an incoherent phonon bath can exhibit a stabilizing effect on the coherent QD cavity-quantum electrodynamics by inhibiting irregular oscillations and allowing for regular collapse and revival patterns. For self-assembled GaAs/InAs QDs at low photon numbers we predict dynamics that deviate dramatically from the well-known atomic Jaynes-Cummings model. Even if the required sample parameters are not yet available in recent experimental achievements, we believe our proposal opens the way to a systematic and deliberate design of photon quantum effects via specifically engineered solid-state environments.

The case of the missing visual details: Occlusion and long-term visual memory.

PubMed

Williams, Carrick C; Burkle, Kyle A

2017-10-01

To investigate the critical information in long-term visual memory representations of objects, we used occlusion to emphasize 1 type of information or another. By occluding 1 solid side of the object (e.g., top 50%) or by occluding 50% of the object with stripes (like a picket fence), we emphasized visible information about the object, processing the visible details in the former and the object's overall form in the latter. On a token discrimination test, surprisingly, memory for solid or stripe occluded objects at either encoding (Experiment 1) or test (Experiment 2) was the same. In contrast, when occluded objects matched at encoding and test (Experiment 3) or when the occlusion shifted, revealing the entire object piecemeal (Experiment 4), memory was better for solid compared with stripe occluded objects, indicating that objects are represented differently in long-term visual memory. Critically, we also found that when the task emphasized remembering exactly what was shown, memory performance in the more detailed solid occlusion condition exceeded that in the stripe condition (Experiment 5). However, when the task emphasized the whole object form, memory was better in the stripe condition (Experiment 6) than in the solid condition. We argue that long-term visual memory can represent objects flexibly, and task demands can interact with visual information, allowing the viewer to cope with changing real-world visual environments. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Reconfigurable Full-Page Braille Displays

NASA Technical Reports Server (NTRS)

Garner, H. Douglas

1994-01-01

Electrically actuated braille display cells of proposed type arrayed together to form full-page braille displays. Like other braille display cells, these provide changeable patterns of bumps driven by digitally recorded text stored on magnetic tapes or in solid-state electronic memories. Proposed cells contain electrorheological fluid. Viscosity of such fluid increases in strong electrostatic field.

Accessing the dark exciton spin in deterministic quantum-dot microlenses

NASA Astrophysics Data System (ADS)

Heindel, Tobias; Thoma, Alexander; Schwartz, Ido; Schmidgall, Emma R.; Gantz, Liron; Cogan, Dan; Strauß, Max; Schnauber, Peter; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, Andre; Rodt, Sven; Gershoni, David; Reitzenstein, Stephan

2017-12-01

The dark exciton state in semiconductor quantum dots (QDs) constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state-based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses which promise enhanced photon extraction, to optically prepare and read out the dark exciton spin and observe its coherent precession. The optical access to the dark exciton is provided via spin-blockaded metastable biexciton states acting as heralding states, which are identified by deploying polarization-sensitive spectroscopy as well as time-resolved photon cross-correlation experiments. Our experiments reveal a spin-precession period of the dark exciton of (0.82 ± 0.01) ns corresponding to a fine-structure splitting of (5.0 ± 0.7) μeV between its eigenstates |↑ ⇑ ±↓ ⇓ ⟩. By exploiting microlenses deterministically fabricated above pre-selected QDs, our work demonstrates the possibility to scale up implementations of quantum information processing schemes using the QD-confined dark exciton spin qubit, such as the generation of photonic cluster states or the realization of a solid-state-based quantum memory.

Vortex-Core Reversal Dynamics: Towards Vortex Random Access Memory

NASA Astrophysics Data System (ADS)

Kim, Sang-Koog

2011-03-01

An energy-efficient, ultrahigh-density, ultrafast, and nonvolatile solid-state universal memory is a long-held dream in the field of information-storage technology. The magnetic random access memory (MRAM) along with a spin-transfer-torque switching mechanism is a strong candidate-means of realizing that dream, given its nonvolatility, infinite endurance, and fast random access. Magnetic vortices in patterned soft magnetic dots promise ground-breaking applications in information-storage devices, owing to the very stable twofold ground states of either their upward or downward core magnetization orientation and plausible core switching by in-plane alternating magnetic fields or spin-polarized currents. However, two technologically most important but very challenging issues --- low-power recording and reliable selection of each memory cell with already existing cross-point architectures --- have not yet been resolved for the basic operations in information storage, that is, writing (recording) and readout. Here, we experimentally demonstrate a magnetic vortex random access memory (VRAM) in the basic cross-point architecture. This unique VRAM offers reliable cell selection and low-power-consumption control of switching of out-of-plane core magnetizations using specially designed rotating magnetic fields generated by two orthogonal and unipolar Gaussian-pulse currents along with optimized pulse width and time delay. Our achievement of a new device based on a new material, that is, a medium composed of patterned vortex-state disks, together with the new physics on ultrafast vortex-core switching dynamics, can stimulate further fruitful research on MRAMs that are based on vortex-state dot arrays.

Nanostructures by ion beams

NASA Astrophysics Data System (ADS)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

Memcomputing with membrane memcapacitive systems

NASA Astrophysics Data System (ADS)

Pershin, Y. V.; Traversa, F. L.; Di Ventra, M.

2015-06-01

We show theoretically that networks of membrane memcapacitive systems—capacitors with memory made out of membrane materials—can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closely reproduces one of the main features of the brain. A practical realization of these membrane memcapacitive systems, using, e.g., graphene or other 2D materials, would be a step forward towards a solid-state realization of memcomputing with passive devices.

On the Fracture Toughness and Stable Crack Growth in Shape Memory Alloys Under Combined Thermomechanical Loading

NASA Astrophysics Data System (ADS)

Jape, Sameer Sanjay

Advanced multifunctional materials such as shape memory alloys (SMAs) offer unprecedented improvement over conventional materials when utilized as high power output solid-state actuators in a plethora of engineering applications, viz. aerospace, automotive, oil and gas exploration, etc., replacing complex multi-component assemblies with compact single-piece adaptive components. These potential applications stem from the material's ability to produce large recoverable actuation strains when subjected to combined thermomechanical loads, via a diffusionless solid-to-solid phase transition between high-temperature cubic austenite and low-temperature monoclinic martensite crystalline phases. To ensure reliable design, functioning and durability of SMA-based actuators, it is imperative to develop a thorough scientific knowledge base and understanding about their fracture properties i.e. crack-initiation and growth during thermal actuation, vis-a-vis the phase transformation metrics (i.e. transformation strains, hysteresis, and temperatures, critical stresses for phase transformation, etc.) and microstructural features (grain size, precipitates, and texture). Systematic experimental and analytical investigation of SMA fracture response based on known theories and methodologies is posed with significant challenges due to the inherent complexity in SMA thermomechanical constitutive response arising out of the shape memory and pseudoelastic effects, martensite detwinning and variant reorientation, thermomechanical coupling, and transformation induced plasticity (TRIP). In this study, a numerical analysis is presented that addresses the fundamental need to study fracture in SMAs in the presence of aforementioned complexities. Finite element modeling with an energetics based fracture toughness criterion and SMA thermomechanical behavior with nonlinearities from thermomechanical coupling and TRIP was conducted. A specific analysis of a prototype boundary value fracture problem yielded results similar to those obtained experimentally, viz. stable crack growth with transformation toughening, dependence of failure cycle on bias load and catastrophic failure during cooling, and are explained using classical fracture mechanics theories. Influence of TRIP as a monotonically accumulating irrecoverable plastic strain on the crack-tip mechanical fields in case of stationary and advancing cracks is also investigated using the same computational tools. Thermomechanical coupling in shape memory alloys, which is an important factor when utilized as solid-state actuators manifests itself through the generation and absorption of latent of transformation and leads to non-uniform temperature distribution. The effect of this coupling vis-a-vis the mechanics of static and advancing cracks is also analyzed using the energetics based approach.

Method and apparatus for offloading compute resources to a flash co-processing appliance

DOEpatents

Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing -bung

2015-10-13

Solid-State Drive (SSD) burst buffer nodes are interposed into a parallel supercomputing cluster to enable fast burst checkpoint of cluster memory to or from nearby interconnected solid-state storage with asynchronous migration between the burst buffer nodes and slower more distant disk storage. The SSD nodes also perform tasks offloaded from the compute nodes or associated with the checkpoint data. For example, the data for the next job is preloaded in the SSD node and very fast uploaded to the respective compute node just before the next job starts. During a job, the SSD nodes perform fast visualization and statistical analysis upon the checkpoint data. The SSD nodes can also perform data reduction and encryption of the checkpoint data.

Quantum storage of heralded polarization qubits in birefringent and anisotropically absorbing materials.

PubMed

Clausen, Christoph; Bussières, Félix; Afzelius, Mikael; Gisin, Nicolas

2012-05-11

Storage of quantum information encoded into heralded single photons is an essential constituent of long-distance quantum communication based on quantum repeaters and of optical quantum information processing. The storage of photonic polarization qubits is, however, difficult because many materials are birefringent and have polarization-dependent absorption. Here we present a simple scheme that eliminates these polarization effects, and we demonstrate it by storing heralded polarization qubits into a solid-state quantum memory. The quantum memory is implemented with a biaxial yttrium orthosilicate (Y2SiO5) crystal doped with rare-earth ions. Heralded single photons generated from a filtered spontaneous parametric down-conversion source are stored, and quantum state tomography of the retrieved polarization state reveals an average fidelity of 97.5±0.4%, which is significantly higher than what is achievable with a measure-and-prepare strategy.

Temporal Multimode Storage of Entangled Photon Pairs

NASA Astrophysics Data System (ADS)

Tiranov, Alexey; Strassmann, Peter C.; Lavoie, Jonathan; Brunner, Nicolas; Huber, Marcus; Verma, Varun B.; Nam, Sae Woo; Mirin, Richard P.; Lita, Adriana E.; Marsili, Francesco; Afzelius, Mikael; Bussières, Félix; Gisin, Nicolas

2016-12-01

Multiplexed quantum memories capable of storing and processing entangled photons are essential for the development of quantum networks. In this context, we demonstrate and certify the simultaneous storage and retrieval of two entangled photons inside a solid-state quantum memory and measure a temporal multimode capacity of ten modes. This is achieved by producing two polarization-entangled pairs from parametric down-conversion and mapping one photon of each pair onto a rare-earth-ion-doped (REID) crystal using the atomic frequency comb (AFC) protocol. We develop a concept of indirect entanglement witnesses, which can be used as Schmidt number witnesses, and we use it to experimentally certify the presence of more than one entangled pair retrieved from the quantum memory. Our work puts forward REID-AFC as a platform compatible with temporal multiplexing of several entangled photon pairs along with a new entanglement certification method, useful for the characterization of multiplexed quantum memories.

KSC-2011-1216

NASA Image and Video Library

2011-01-27

CAPE CANAVERAL, Fla. -- Kennedy Space Center Director and former astronaut Bob Cabana, left, United Space Alliance's Associate Program Manager for Solid Rocket Boosters Roger Elliott and Center Deputy Director Janet Petro participate in a Day of Remembrance wreath laying ceremony at the Space Mirror Memorial at the Kennedy Space Center Visitor Complex in Florida. The ceremony honors members of the NASA family who lost their lives while furthering the cause of exploration and discovery. The memorial displays the names of 24 United States astronauts, including the crew members of space shuttles Columbia and Challenger, Apollo 1, and those who died in training and commercial airplane accidents. The memorial is a project of the Astronauts Memorial Foundation and was paid for by Florida residents who purchased special Challenger mission automobile license plates. 2011 marks the 25th anniversary of the loss of Challenger, which broke apart over the Atlantic Ocean 73 seconds into flight on Jan. 28, 1986. Photo credit: NASA/Kim Shiflett

KSC-2011-1215

NASA Image and Video Library

2011-01-27

CAPE CANAVERAL, Fla. -- United Space Alliance's Associate Program Manager for Solid Rocket Boosters Roger Elliott, back, Kennedy Space Center Deputy Director Janet Petro, and Center Director and former astronaut Bob Cabana, participate in a Day of Remembrance wreath laying ceremony at the Space Mirror Memorial at the Kennedy Space Center Visitor Complex in Florida. The ceremony honors members of the NASA family who lost their lives while furthering the cause of exploration and discovery. The memorial displays the names of 24 United States astronauts, including the crew members of space shuttles Columbia and Challenger, Apollo 1, and those who died in training and commercial airplane accidents. The memorial is a project of the Astronauts Memorial Foundation and was paid for by Florida residents who purchased special Challenger mission automobile license plates. 2011 marks the 25th anniversary of the loss of Challenger, which broke apart over the Atlantic Ocean 73 seconds into flight on Jan. 28, 1986. Photo credit: NASA/Kim Shiflett

KSC-2011-1214

NASA Image and Video Library

2011-01-27

CAPE CANAVERAL, Fla. -- United Space Alliance's Associate Program Manager for Solid Rocket Boosters Roger Elliott, left, Kennedy Space Center Deputy Director Janet Petro, and Center Director and former astronaut Bob Cabana, participate in a Day of Remembrance wreath laying ceremony at the Space Mirror Memorial at the Kennedy Space Center Visitor Complex in Florida. The ceremony honors members of the NASA family who lost their lives while furthering the cause of exploration and discovery. The memorial displays the names of 24 United States astronauts, including the crew members of space shuttles Columbia and Challenger, Apollo 1, and those who died in training and commercial airplane accidents. The memorial is a project of the Astronauts Memorial Foundation and was paid for by Florida residents who purchased special Challenger mission automobile license plates. 2011 marks the 25th anniversary of the loss of Challenger, which broke apart over the Atlantic Ocean 73 seconds into flight on Jan. 28, 1986. Photo credit: NASA/Kim Shiflett

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Proceedings of the OGAMM Meeting (3rd) Held in Keswick-On-Derwentwater, Cumbria, England on September 4-7, 1990

DTIC Science & Technology

1990-09-07

and frequency shifting, (4) Investigation of device processes in optical waveguides and fibers; optical bistability for optical memory operation, and...all relative to urea, unless stated otherwise. Compound SHG Colour (1) 0.60 Yellow (2) 0.70 Dark green (3) 0.01 Pale yellow (4) 0.22 Yellow (5) 0.73...LOUGHBOROUGH T. KING UNIVERSITY OF TECHNOLOGY H. Coles N. PHILIPS I - LASER ENCHANCED 1 - OPTICAL & THERMAL DENSIFICATION PROPERTIES 2 - SOLID STATE

Heat-Assisted Multiferroic Solid-State Memory

PubMed Central

2017-01-01

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric layer and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99. PMID:28841185

Heat-Assisted Multiferroic Solid-State Memory.

PubMed

Lepadatu, Serban; Vopson, Melvin M

2017-08-25

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO₃ antiferroelectric layer and Ni 81 Fe 19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99.

Scale-free networks as an epiphenomenon of memory

NASA Astrophysics Data System (ADS)

Caravelli, F.; Hamma, A.; Di Ventra, M.

2015-01-01

Many realistic networks are scale free, with small characteristic path lengths, high clustering, and power law in their degree distribution. They can be obtained by dynamical networks in which a preferential attachment process takes place. However, this mechanism is non-local, in the sense that it requires knowledge of the whole graph in order for the graph to be updated. Instead, if preferential attachment and realistic networks occur in physical systems, these features need to emerge from a local model. In this paper, we propose a local model and show that a possible ingredient (which is often underrated) for obtaining scale-free networks with local rules is memory. Such a model can be realised in solid-state circuits, using non-linear passive elements with memory such as memristors, and thus can be tested experimentally.

Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors.

PubMed

Chung, Hyunjoong; Dudenko, Dmytro; Zhang, Fengjiao; D'Avino, Gabriele; Ruzié, Christian; Richard, Audrey; Schweicher, Guillaume; Cornil, Jérôme; Beljonne, David; Geerts, Yves; Diao, Ying

2018-01-18

Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.

Protecting a Diamond Quantum Memory by Charge State Control.

PubMed

Pfender, Matthias; Aslam, Nabeel; Simon, Patrick; Antonov, Denis; Thiering, Gergő; Burk, Sina; Fávaro de Oliveira, Felipe; Denisenko, Andrej; Fedder, Helmut; Meijer, Jan; Garrido, Jose A; Gali, Adam; Teraji, Tokuyuki; Isoya, Junichi; Doherty, Marcus William; Alkauskas, Audrius; Gallo, Alejandro; Grüneis, Andreas; Neumann, Philipp; Wrachtrup, Jörg

2017-10-11

In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and V Si -centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.

The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

NASA Technical Reports Server (NTRS)

Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

1979-01-01

The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

Static Behavior of Chalcogenide Based Programmable Metallization Cells

NASA Astrophysics Data System (ADS)

Rajabi, Saba

Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.

Space Radiation Effects in Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Johnston, A. H.

2001-01-01

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Shape memory alloy smart knee spacer to enhance knee functionality: model design and finite element analysis.

PubMed

Gautam, Arvind; Rani, A Bhargavi; Callejas, Miguel A; Acharyya, Swati Ghosh; Acharyya, Amit; Biswas, Dwaipayan; Bhandari, Vasundhra; Sharma, Paresh; Naik, Ganesh R

2016-08-01

In this paper we introduce Shape Memory Alloy (SMA) for designing the tibial part of Total Knee Arthroplasty (TKA) by exploiting the shape-memory and pseudo-elasticity property of the SMA (e.g. NiTi). This would eliminate the drawbacks of the state-of-the art PMMA based knee-spacer including fracture, sustainability, dislocation, tilting, translation and subluxation for tackling the Osteoarthritis especially for the aged people of 45-plus or the athletes. In this paper a Computer Aided Design (CAD) model using SolidWorks for the knee-spacer is presented based on the proposed SMA adopting the state-of-the art industry-standard geometry that is used in the PMMA based spacer design. Subsequently Ansys based Finite Element Analysis is carried out to measure and compare the performance between the proposed SMA based model with the state-of-the art PMMA ones. 81% more bending is noticed in the PMMA based spacer compared to the proposed SMA that would eventually cause fracture and tilting or translation of spacer. Permanent shape deformation of approximately 58.75% in PMMA based spacer is observed compared to recoverable 11% deformation in SMA when same load is applied on both separately.

MURI Center for Photonic Quantum Information Systems

DTIC Science & Technology

2009-10-16

conversion; solid- state quantum gates based on quantum dots in semiconductors and on NV centers in diamond; quantum memories using optical storage...of our high-speed quantum cryptography systems, and also by continuing to work on quantum information encoding into transverse spatial modes. 14...make use of cavity QED effects for quantum information processing, the quantum dot needs to be addressed coherently . We have probed the QD-cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarkevich, N. A.; Johnson, D. D.

NiTi is the most used shape-memory alloy, nonetheless, a lack of understanding remains regarding the associated structures and transitions, including their barriers. Using a generalized solid-state nudge elastic band (GSSNEB) method implemented via density-functional theory, we detail the structural transformations in NiTi relevant to shape memory: those between body-centered orthorhombic (BCO) groundstate and a newly identified stable austenite (“glassy” B2-like) structure, including energy barriers (hysteresis) and intermediate structures (observed as a kinetically limited R-phase), and between martensite variants (BCO orientations). All results are in good agreement with available experiment. We contrast the austenite results to those from the often-assumed, butmore » unstable B2. Furthermore, these high- and low-temperature structures and structural transformations provide much needed atomic-scale detail for transitions responsible for NiTi shape-memory effects.« less

Noninvasive Quantum Measurement of Arbitrary Operator Order by Engineered Non-Markovian Detectors

NASA Astrophysics Data System (ADS)

Bülte, Johannes; Bednorz, Adam; Bruder, Christoph; Belzig, Wolfgang

2018-04-01

The development of solid-state quantum technologies requires the understanding of quantum measurements in interacting, nonisolated quantum systems. In general, a permanent coupling of detectors to a quantum system leads to memory effects that have to be taken into account in interpreting the measurement results. We analyze a generic setup of two detectors coupled to a quantum system and derive a compact formula in the weak-measurement limit that interpolates between an instantaneous (text-book type) and almost continuous—detector dynamics-dependent—measurement. A quantum memory effect that we term "system-mediated detector-detector interaction" is crucial to observe noncommuting observables simultaneously. Finally, we propose a mesoscopic double-dot detector setup in which the memory effect is tunable and that can be used to explore the transition to non-Markovian quantum measurements experimentally.

Preliminary design for a standard 10 sup 7 bit Solid State Memory (SSM)

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Howle, W. M., Jr.; Stermer, R. L., Jr.

1978-01-01

A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.

Nonvolatile memory chips: critical technology for high-performance recce systems

NASA Astrophysics Data System (ADS)

Kaufman, Bruce

2000-11-01

Airborne recce systems universally require nonvolatile storage of recorded data. Both present and next generation designs make use of flash memory chips. Flash memory devices are in high volume use for a variety of commercial products ranging form cellular phones to digital cameras. Fortunately, commercial applications call for increasing capacities and fast write times. These parameters are important to the designer of recce recorders. Of economic necessity COTS devices are used in recorders that must perform in military avionics environments. Concurrently, recording rates are moving to $GTR10Gb/S. Thus to capture imagery for even a few minutes of record time, tactically meaningful solid state recorders will require storage capacities in the 100s of Gbytes. Even with memory chip densities at present day 512Mb, such capacities require thousands of chips. The demands on packaging technology are daunting. This paper will consider the differing flash chip architectures, both available and projected and discuss the impact on recorder architecture and performance. Emerging nonvolatile memory technologies, FeRAM AND MIRAM will be reviewed with regard to their potential use in recce recorders.

ASA-FTL: An adaptive separation aware flash translation layer for solid state drives

DOE PAGES

Xie, Wei; Chen, Yong; Roth, Philip C

2016-11-03

Here, the flash-memory based Solid State Drive (SSD) presents a promising storage solution for increasingly critical data-intensive applications due to its low latency (high throughput), high bandwidth, and low power consumption. Within an SSD, its Flash Translation Layer (FTL) is responsible for exposing the SSD’s flash memory storage to the computer system as a simple block device. The FTL design is one of the dominant factors determining an SSD’s lifespan and performance. To reduce the garbage collection overhead and deliver better performance, we propose a new, low-cost, adaptive separation-aware flash translation layer (ASA-FTL) that combines sampling, data clustering and selectivemore » caching of recency information to accurately identify and separate hot/cold data while incurring minimal overhead. We use sampling for light-weight identification of separation criteria, and our dedicated selective caching mechanism is designed to save the limited RAM resource in contemporary SSDs. Using simulations of ASA-FTL with both real-world and synthetic workloads, we have shown that our proposed approach reduces the garbage collection overhead by up to 28% and the overall response time by 15% compared to one of the most advanced existing FTLs. We find that the data clustering using a small sample size provides significant performance benefit while only incurring a very small computation and memory cost. In addition, our evaluation shows that ASA-FTL is able to adapt to the changes in the access pattern of workloads, which is a major advantage comparing to existing fixed data separation methods.« less

Triggering co-stimulation directly in melanoma tumor fragments drives CD8+ tumor-infiltrating lymphocyte expansion with improved effector-memory properties.

PubMed

Chacon, Jessica Ann; Sarnaik, Amod A; Pilon-Thomas, Shari; Radvanyi, Laszlo

2015-12-01

TIL from solid tumors can express activation/co-stimulatory molecules like 4-1BB/CD137, a sign of recent antigenic stimulation in the tumor microenvironment (TME). This activated state can be exploited ex vivo to enhance the expansion of tumor-reactive CD8 + TIL for adoptive cell therapy through direct addition of immunomodulators to tumor fragments in culture.

Temperature variations at nano-scale level in phase transformed nanocrystalline NiTi shape memory alloys adjacent to graphene layers.

PubMed

Amini, Abbas; Cheng, Chun; Naebe, Minoo; Church, Jeffrey S; Hameed, Nishar; Asgari, Alireza; Will, Frank

2013-07-21

The detection and control of the temperature variation at the nano-scale level of thermo-mechanical materials during a compression process have been challenging issues. In this paper, an empirical method is proposed to predict the temperature at the nano-scale level during the solid-state phase transition phenomenon in NiTi shape memory alloys. Isothermal data was used as a reference to determine the temperature change at different loading rates. The temperature of the phase transformed zone underneath the tip increased by ∼3 to 40 °C as the loading rate increased. The temperature approached a constant with further increase in indentation depth. A few layers of graphene were used to enhance the cooling process at different loading rates. Due to the presence of graphene layers the temperature beneath the tip decreased by a further ∼3 to 10 °C depending on the loading rate. Compared with highly polished NiTi, deeper indentation depths were also observed during the solid-state phase transition, especially at the rate dependent zones. Larger superelastic deformations confirmed that the latent heat transfer through the deposited graphene layers allowed a larger phase transition volume and, therefore, more stress relaxation and penetration depth.

Effect of nitrogen on iron-manganese-based shape memory alloys

NASA Astrophysics Data System (ADS)

Ariapour, Azita

Shape memory effect is due to a reversible martensitic transformation. The major drawback in case of Fe-Mn-based shape memory alloys is their inferior shape memory effect compared to Ni-Ti and Cu-based shape memory alloys and their low strength and corrosion resistance compared to steel alloys. It is known that by increasing the alloy strength the shape memory effect can be improved. Nitrogen in solid solution can increase the strength of steels to a greater extent than other major alloying elements. However, its effect on shape memory effect of Fe-Mn-based alloys is ambiguous. In this work first we investigated the effect of nitrogen addition in solid solution on both shape memory effect (SME) and strength of a Fe-Mn-Cr-Ni-Si shape memory alloy (SMA). It was found that interstitial nitrogen suppressed the shape memory effect in these alloys. As an example addition of 0.24 wt % nitrogen in solid solution to the alloy system suppressed the SME by ˜80% and increased the strength by 20%. A reduction of martensitic phase formation was found to be the dominant factor in suppression of the SME. This was related, experimentally and theoretically to stacking fault energy of the alloy as well as the driving force and friction force during the transformation. The second approach was doping the alloy with both 0.36 wt% of nitrogen and 0.36 wt% of niobium. Niobium has great affinity for nitrogen and thus NbN dispersed particles can be produced in the alloy following hot rolling. Then particles prevent growth of the alloy and increase the strength of the alloy due to reduced grain size, and precipitation hardening. The improvement of SME in this alloy compared to the interstitial containing alloys was due to the large removal of the nitrogen from solid solution. In case of all the alloys studied in this work, the presence of nitrogen in solid solution improved the corrosion resistance of the alloy. This suggests that nitrogen can replace nickel in the alloy. One of the proposed applications for high strength Fe-Mn-based alloys is as tendon rods in prestressed concrete. The advantage of M alloys in this application is the possibility of producing curved structural prestressed concrete.

Assessment of Various Flow Solvers Used to Predict the Thermal Environment inside Space Shuttle Solid Rocket Motor Joints

NASA Technical Reports Server (NTRS)

Wang, Qun-Zhen; Cash, Steve (Technical Monitor)

2002-01-01

It is very important to accurately predict the gas pressure, gas and solid temperature, as well as the amount of O-ring erosion inside the space shuttle Reusable Solid Rocket Motor (RSRM) joints in the event of a leak path. The scenarios considered are typically hot combustion gas rapid pressurization events of small volumes through narrow and restricted flow paths. The ideal method for this prediction is a transient three-dimensional computational fluid dynamics (CFD) simulation with a computational domain including both combustion gas and surrounding solid regions. However, this has not yet been demonstrated to be economical for this application due to the enormous amount of CPU time and memory resulting from the relatively long fill time as well as the large pressure and temperature rising rate. Consequently, all CFD applications in RSRM joints so far are steady-state simulations with solid regions being excluded from the computational domain by assuming either a constant wall temperature or no heat transfer between the hot combustion gas and cool solid walls.

Data storage technology comparisons

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1990-01-01

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Reversible TAD Chemistry as a Convenient Tool for the Design of (Re)processable PCL-Based Shape-Memory Materials.

PubMed

Defize, Thomas; Riva, Raphaël; Thomassin, Jean-Michel; Alexandre, Michaël; Herck, Niels Van; Prez, Filip Du; Jérôme, Christine

2017-01-01

A chemically cross-linked but remarkably (re)processable shape-memory polymer (SMP) is designed by cross-linking poly(ε-caprolactone) (PCL) stars via the efficient triazolinedione click chemistry, based on the very fast and reversible Alder-ene reaction of 1,2,4-triazoline-3,5-dione (TAD) with indole compounds. Typically, a six-arm star-shaped PCL functionalized by indole moieties at the chain ends is melt-blended with a bisfunctional TAD, directly resulting in a cross-linked PCL-based SMP without the need of post-curing treatment. As demonstrated by the stress relaxation measurement, the labile character of the TAD-indole adducts under stress allows for the solid-state plasticity reprocessing of the permanent shape at will by compression molding of the raw cross-linked material, while keeping excellent shape-memory properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

NASA Astrophysics Data System (ADS)

Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications.

PubMed

Romeira, Bruno; Figueiredo, José M L; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

Overview of emerging nonvolatile memory technologies

PubMed Central

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices. PMID:25278820

Overview of emerging nonvolatile memory technologies.

PubMed

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Thermomechanical behavior of shape memory elastomeric composites

NASA Astrophysics Data System (ADS)

Ge, Qi; Luo, Xiaofan; Rodriguez, Erika D.; Zhang, Xiao; Mather, Patrick T.; Dunn, Martin L.; Qi, H. Jerry

2012-01-01

Shape memory polymers (SMPs) can fix a temporary shape and recover their permanent shape in response to environmental stimuli such as heat, electricity, or irradiation. Most thermally activated SMPs use the macromolecular chain mobility change around the glass transition temperature ( Tg) to achieve the shape memory (SM) effects. During this process, the stiffness of the material typically changes by three orders of magnitude. Recently, a composite materials approach was developed to achieve thermally activated shape memory effect where the material exhibits elastomeric response in both the temporary and the recovered configurations. These shape memory elastomeric composites (SMECs) consist of an elastomeric matrix reinforced by a semicrystalline polymer fiber network. The matrix provides background rubber elasticity while the fiber network can transform between solid crystals and melt phases over the operative temperature range. As such it serves as a reversible "switching phase" that enables shape fixing and recovery. Shape memory elastomeric composites provide a new paradigm for the development of a wide array of active polymer composites that utilize the melt-crystal transition to achieve the shape memory effect. This potentially allows for material systems with much simpler chemistries than most shape memory polymers and thus can facilitate more rapid material development and insertion. It is therefore important to understand the thermomechanical behavior and to develop corresponding material models. In this paper, a 3D finite-deformation constitutive modeling framework was developed to describe the thermomechanical behavior of SMEC. The model is phenomenological, although inspired by micromechanical considerations of load transfer between the matrix and fiber phases of a composite system. It treats the matrix as an elastomer and the fibers as a complex solid that itself is an aggregate of melt and crystal phases that evolve from one to the other during a temperature change. As such, the composite consists of an elastomer reinforced by a soft liquid at high temperature and a stiff solid at low temperature. The model includes a kinetic description of the non-isothermal crystallization and melting of the fibers during a temperature change. As the fibers transform from melt to crystal during cooling it is assumed that new crystals are formed in an undeformed state, which requires careful tracking of the kinematics of the evolving phases which comes at a significant computational cost. In order to improve the computational efficiency, an effective phase model (EPM) is adopted to treat the evolving crystal phases as an effective medium. A suite of careful thermomechanical experiments with a SMEC was carried out to calibrate various model parameters, and then to demonstrate the ability of the model to accurately capture the shape memory behavior of the SMEC system during complex thermomechanical loading scenarios. The model also identifies the effects of microstructural design parameters such as the fiber volume fraction.

Triggering co-stimulation directly in melanoma tumor fragments drives CD8+ tumor-infiltrating lymphocyte expansion with improved effector-memory properties

PubMed Central

Chacon, Jessica Ann; Sarnaik, Amod A; Pilon-Thomas, Shari; Radvanyi, Laszlo

2015-01-01

TIL from solid tumors can express activation/co-stimulatory molecules like 4–1BB/CD137, a sign of recent antigenic stimulation in the tumor microenvironment (TME). This activated state can be exploited ex vivo to enhance the expansion of tumor-reactive CD8+ TIL for adoptive cell therapy through direct addition of immunomodulators to tumor fragments in culture. PMID:26587314

Advanced Solid-State Lasers/Compact Blue-Green Lasers. 1993 Technical Digest Series. Volume 2. Organization of the 1993 Photonics Science Topical Meetings held in New Orleans, Louisiana on 1 - 4 February 1993

DTIC Science & Technology

1993-02-04

memories is presented. (p. 400) JWC2 Pairwlse visible to UV up- tions. Periodic domain-inverted structure has conversion In Ho=÷ and Tm’" doped potential...Sydney. Nd:W. aM5itoL 40 1A 18 led &: 400 1C ID •:•• •e,,,- • ,, Figure 1; Geometries for solid collectors with 1, 2 or 3 pump sources. Figure 2...Although the output efficiencies of early devices were quite low, resonant enhancement of the signal input inside the laser cavity has recently led to

Ion conducting organic/inorganic hybrid polymers

NASA Technical Reports Server (NTRS)

Meador, Maryann B. (Inventor); Kinder, James D. (Inventor)

2010-01-01

This invention relates to a series of organic/inorganic hybrid polymers that are easy to fabricate into dimensionally stable films with good ion-conductivity over a wide range of temperatures for use in a variety of applications. The polymers are prepared by the reaction of amines, preferably diamines and mixtures thereof with monoamines with epoxy-functionalized alkoxysilanes. The products of the reaction are polymerized by hydrolysis of the alkoxysilane groups to produce an organic-containing silica network. Suitable functionality introduced into the amine and alkoxysilane groups produce solid polymeric membranes which conduct ions for use in fuel cells, high-performance solid state batteries, chemical sensors, electrochemical capacitors, electro-chromic windows or displays, analog memory devices and the like.

Variable-amplitude oscillatory shear response of amorphous materials.

PubMed

Perchikov, Nathan; Bouchbinder, Eran

2014-06-01

Variable-amplitude oscillatory shear tests are emerging as powerful tools to investigate and quantify the nonlinear rheology of amorphous solids, complex fluids, and biological materials. Quite a few recent experimental and atomistic simulation studies demonstrated that at low shear amplitudes, an amorphous solid settles into an amplitude- and initial-conditions-dependent dissipative limit cycle, in which back-and-forth localized particle rearrangements periodically bring the system to the same state. At sufficiently large shear amplitudes, the amorphous system loses memory of the initial conditions, exhibits chaotic particle motions accompanied by diffusive behavior, and settles into a stochastic steady state. The two regimes are separated by a transition amplitude, possibly characterized by some critical-like features. Here we argue that these observations support some of the physical assumptions embodied in the nonequilibrium thermodynamic, internal-variables based, shear-transformation-zone model of amorphous viscoplasticity; most notably that "flow defects" in amorphous solids are characterized by internal states between which they can make transitions, and that structural evolution is driven by dissipation associated with plastic deformation. We present a rather extensive theoretical analysis of the thermodynamic shear-transformation-zone model for a variable-amplitude oscillatory shear protocol, highlighting its success in accounting for various experimental and simulational observations, as well as its limitations. Our results offer a continuum-level theoretical framework for interpreting the variable-amplitude oscillatory shear response of amorphous solids and may promote additional developments.

Disorder-induced localization in crystalline phase-change materials.

PubMed

Siegrist, T; Jost, P; Volker, H; Woda, M; Merkelbach, P; Schlockermann, C; Wuttig, M

2011-03-01

Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

Effects of Palladium Content, Quaternary Alloying, and Thermomechanical Processing on the Behavior of Ni-Ti-Pd Shape Memory Alloys for Actuator Applications

NASA Technical Reports Server (NTRS)

Bigelow, Glen

2008-01-01

The need for compact, solid-state actuation systems for use in the aerospace, automotive, and other transportation industries is currently driving research in high-temperature shape memory alloys (HTSMA) having transformation temperatures above 100 C. One of the basic high temperature systems under investigation to fill this need is NiTiPd. Prior work on this alloy system has focused on phase transformations and respective temperatures, no-load shape memory behavior (strain recovery), and tensile behavior for selected alloys. In addition, a few tests have been done to determine the effect of boron additions and thermomechanical treatment on the aforementioned properties. The main properties that affect the performance of a solid state actuator, namely work output, transformation strain, and permanent deformation during thermal cycling under load have mainly been neglected. There is also no consistent data representing the mechanical behavior of this alloy system over a broad range of compositions. For this thesis, ternary NiTiPd alloys containing 15 to 46 at.% palladium were processed and the transformation temperatures, basic tensile properties, and work characteristics determined. However, testing reveals that at higher levels of alloying addition, the benefit of increased transformation temperature begins to be offset by lowered work output and permanent deformation or "walking" of the alloy during thermal cycling under load. In response to this dilemma, NiTiPd alloys have been further alloyed with gold, platinum, and hafnium additions to solid solution strengthen the martensite and parent austenite phases in order to improve the thermomechanical behavior of these materials. The tensile properties, work behavior, and dimensional stability during repeated thermal cycling under load for the ternary and quaternary alloys were compared and discussed. In addition, the benefits of more advanced thermomechanical processing or training on the dimensional stability of these alloys during repeated actuation were investigated. Finally, the effect of quaternary alloying on the thermal stability of NiTiPdX alloys is determined via thermal cycling of the materials to increasing temperatures under load. It was found that solid solution additions of platinum and gold resulted in about a 30 C increase in upper use temperature compared to the baseline NiTiPd alloy, providing an added measure of over-temperature protection.

Solid state engine using nitinol memory alloy

DOEpatents

Golestaneh, Ahmad A.

1981-01-01

A device for converting heat energy to mechanical energy includes a reservoir of a hot fluid and a rotor assembly mounted thereabove so a portion of it dips into the hot fluid. The rotor assembly may include a shaft having four spokes extending radially outwardly therefrom at right angles to each other, a floating ring and four flexible elements composed of a thermal memory material having a critical temperature between the temperature of the hot fluid and that of the ambient atmosphere extending between the ends of the spokes and the floating ring. Preferably, the flexible elements are attached to the floating ring through curved leaf springs. Energetic shape recovery of the flexible elements in the hot fluid causes the rotor assembly to rotate.

Solid state engine using nitinol memory alloy

DOEpatents

Golestaneh, A.A.

1980-01-21

A device for converting heat energy to mechanical energy includes a reservoir of a hot fluid and a rotor assembly mounted thereabove so a portion of it dips into the hot fluid. The rotor assembly may include a shaft having four spokes extending radially outwardly therefrom at right angles to each other, a floating ring and four flexible elements composed of a thermal memory material having a critical temperature between the temperature of the hot fluid and that of the ambient atmosphere extending between the ends of the spokes and the floating ring. Preferably, the flexible elements are attached to the floating ring through curved leaf springs. Energetic shape recovery of the flexible elements in the hot fluid causes the rotor assembly to rotate.

Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

NASA Astrophysics Data System (ADS)

Sun, Jonathan Z.

2016-10-01

Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

Frequency-bin entanglement of ultra-narrow band non-degenerate photon pairs

NASA Astrophysics Data System (ADS)

Rieländer, Daniel; Lenhard, Andreas; Jime`nez Farìas, Osvaldo; Máttar, Alejandro; Cavalcanti, Daniel; Mazzera, Margherita; Acín, Antonio; de Riedmatten, Hugues

2018-01-01

We demonstrate frequency-bin entanglement between ultra-narrowband photons generated by cavity enhanced spontaneous parametric down conversion. Our source generates photon pairs in widely non-degenerate discrete frequency modes, with one photon resonant with a quantum memory material based on praseodymium doped crystals and the other photon at telecom wavelengths. Correlations between the frequency modes are analyzed using phase modulators and narrowband filters before detection. We show high-visibility two photon interference between the frequency modes, allowing us to infer a coherent superposition of the modes. We develop a model describing the state that we create and use it to estimate optimal measurements to achieve a violation of the Clauser-Horne (CH) Bell inequality under realistic assumptions. With these settings we perform a Bell test and show a significant violation of the CH inequality, thus proving the entanglement of the photons. Finally we demonstrate the compatibility with a quantum memory material by using a spectral hole in the praseodymium (Pr) doped crystal as spectral filter for measuring high-visibility two-photon interference. This demonstrates the feasibility of combining frequency-bin entangled photon pairs with Pr-based solid state quantum memories.

Thermodynamic framework for information in nanoscale systems with memory

NASA Astrophysics Data System (ADS)

Arias-Gonzalez, J. Ricardo

2017-11-01

Information is represented by linear strings of symbols with memory that carry errors as a result of their stochastic nature. Proofreading and edition are assumed to improve certainty although such processes may not be effective. Here, we develop a thermodynamic theory for material chains made up of nanoscopic subunits with symbolic meaning in the presence of memory. This framework is based on the characterization of single sequences of symbols constructed under a protocol and is used to derive the behavior of ensembles of sequences similarly constructed. We then analyze the role of proofreading and edition in the presence of memory finding conditions to make revision an effective process, namely, to decrease the entropy of the chain. Finally, we apply our formalism to DNA replication and RNA transcription finding that Watson and Crick hybridization energies with which nucleotides are branched to the template strand during the copying process are optimal to regulate the fidelity in proofreading. These results are important in applications of information theory to a variety of solid-state physical systems and other biomolecular processes.

Thermodynamic framework for information in nanoscale systems with memory.

PubMed

Arias-Gonzalez, J Ricardo

2017-11-28

Information is represented by linear strings of symbols with memory that carry errors as a result of their stochastic nature. Proofreading and edition are assumed to improve certainty although such processes may not be effective. Here, we develop a thermodynamic theory for material chains made up of nanoscopic subunits with symbolic meaning in the presence of memory. This framework is based on the characterization of single sequences of symbols constructed under a protocol and is used to derive the behavior of ensembles of sequences similarly constructed. We then analyze the role of proofreading and edition in the presence of memory finding conditions to make revision an effective process, namely, to decrease the entropy of the chain. Finally, we apply our formalism to DNA replication and RNA transcription finding that Watson and Crick hybridization energies with which nucleotides are branched to the template strand during the copying process are optimal to regulate the fidelity in proofreading. These results are important in applications of information theory to a variety of solid-state physical systems and other biomolecular processes.

Development and Characterization of Improved NiTiPd High-Temperature Shape-Memory Alloys by Solid-Solution Strengthening and Thermomechanical Processing

NASA Technical Reports Server (NTRS)

Bigelow, Glen; Noebe, Ronald; Padula, Santo, II; Garg, Anita; Olson, David

2006-01-01

The need for compact, solid-state actuation systems for use in the aerospace, automotive, and other transportation industries is currently motivating research in high-temperature shape-memory alloys (HTSMA) with transformation temperatures greater than 100 C. One of the basic high-temperature alloys investigated to fill this need is Ni(19.5)Ti(50.5)Pd30. Initial testing has indicated that this alloy, while having acceptable work characteristics, suffers from significant permanent deformation (or ratcheting) during thermal cycling under load. In an effort to overcome this deficiency, various solid-solution alloying and thermomechanical processing schemes were investigated. Solid-solution strengthening was achieved by substituting 5at% gold or platinum for palladium in Ni(19.5)Ti(50.5)Pd30, the so-called baseline alloy, to strengthen the martensite and austenite phases against slip processes and improve thermomechanical behavior. Tensile properties, work behavior, and dimensional stability during repeated thermal cycling under load for the ternary and quaternary alloys were compared. The relative difference in yield strength between the martensite and austenite phases and the dimensional stability of the alloy were improved by the quaternary additions, while work output was only minimally impacted. The three alloys were also thermomechanically processed by cycling repeatedly through the transformation range under a constant stress. This so-called training process dramatically improved the dimensional stability in these samples and also recovered the slight decrease in work output caused by quaternary alloying. An added benefit of the solid-solution strengthening was maintenance of enhanced dimensional stability of the trained material to higher temperatures compared to the baseline alloy, providing a greater measure of over-temperature capability.

Digital Holographic Data Storage with Fast Access

NASA Astrophysics Data System (ADS)

Ma, J.; Chang, T.; Choi, S.; Hong, J.

Recent investigations in holographic mass memory systems have produced proof of concept demonstrations that have highlighted their potential for providing unprecedented capacity, data transfer rates and fast random access performance [1-4]. The exploratory nature of most such investigations has been largely confined to benchtop experiments in which the practical constraints of packaging and environmental concerns have been ignored. We have embarked on an effort to demonstrate the holographic mass memory concept by developing a compact prototype system geared for avionics and similar applications, which demand the following features (mostly interdependent factors): (1) solid-state design (no moving parts), (2) fast data-seek time, (3) robustness with respect to environmental factors (temperature, vibration, shock). In this chapter, we report on the development and demonstration of two systems, one with 100 Mbytes and the other with more than 1 Gbyte of storage capacity. Both systems feature solid-state design with the addressing mechanism realized with acousto-optic deflectors that are capable of better than 50 µs data seek time. Since the basic designs for the two systems are similar, we describe only the larger system in detail. The operation of the smaller system has been demonstrated in various environments, including hand-held operation and thermal/mechanical shock, and a photograph of the smaller system is provided as well as actual digital data retrieved from the same system.

Packaged digital holographic data storage with fast access

NASA Astrophysics Data System (ADS)

Ma, Jian; Chang, Tallis Y.; Choi, Sung; Hong, John H.

1998-11-01

Recent investigations in holographic mass memory systems have produced proof of concept demonstrations that have highlighted their potential for providing unprecedented capacity, data transfer rates and fast random access performance. The exploratory nature of most such investigations have been largely confined to benchtop experiments in which the practical constraints of packaging and environmental concerns have been ignored. We have embarked on an effort to demonstrate the holographic mass memory concept by developing a compact prototype system geared for avionics and similar applications which demand the following features (mostly interdependent factors): (1) solid state design (no moving parts), (2) fast data seek time, (3) robust with respect to environmental factors (temperature, vibration, shock). In this paper, we report on the development and demonstration of two systems, one with 100 Mbytes and the other with more than 1 Gbyte of storage capacity. Both systems feature solid state design with the addressing mechanism realized with acousto- optic deflectors that are capable of better than 50 microseconds data seek time. Since the basic designs for the two systems are similar, we describe only the larger system in detail. The operation of the smaller system has been demonstrated in various environments including hand-held operation and thermal/mechanical shock and a photograph of the smaller system is provided as well as actual digital data retrieved from the same system.

Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

NASA Astrophysics Data System (ADS)

Lee, Jong-Sun; Kim, Dong-Won; Kim, Hea-Jee; Jin, Soo-Min; Song, Myung-Jin; Kwon, Ki-Hyun; Park, Jea-Gun; Jalalah, Mohammed; Al-Hajry, Ali

2018-01-01

The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as 106 AC write/erase endurance cycles with 100-μs AC pulse width and a long retention time of 7.4-years at 85 °C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories.

Tactical reconnaissance recorder alternatives

NASA Astrophysics Data System (ADS)

Klang, Mark R.

1997-11-01

The actual collection of data, such as digital imagery, using the multitude of sensors available today and in the near future, requires a high data rate digital recorder. The amount of memory, data rates, environmental factors and affordability are important issues when selecting the type of recording system. This paper will discuss two types of systems, tape and solid state. Emphasis will be placed on operational factors and specific mission profiles that are associated with a tactical reconnaissance mission. The current and projected costs of the digital tape recorder and soli state recorder will be examined. The logistics of moving the data from the aircraft to a Ground Exploitation System will be discussed. Once the data is collected it needs to be stored in non-volatile memory with easy access. One of the major problems encountered during Desert Storm was the inability to locate and retrieve reconnaissance images. A data base that can store terabytes of data and have the ability to recall this information from off-site locations should be a requirement for a Desert Storm scenario.

Electro-Optic Quantum Memory for Light Using Two-Level Atoms

NASA Astrophysics Data System (ADS)

Hétet, G.; Longdell, J. J.; Alexander, A. L.; Lam, P. K.; Sellars, M. J.

2008-01-01

We present a simple quantum memory scheme that allows for the storage of a light field in an ensemble of two-level atoms. The technique is analogous to the NMR gradient echo for which the imprinting and recalling of the input field are performed by controlling a linearly varying broadening. Our protocol is perfectly efficient in the limit of high optical depths and the output pulse is emitted in the forward direction. We provide a numerical analysis of the protocol together with an experiment performed in a solid state system. In close agreement with our model, the experiment shows a total efficiency of up to 15%, and a recall efficiency of 26%. We suggest simple realizable improvements for the experiment to surpass the no-cloning limit.

Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

PubMed

Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

2009-03-04

We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

Electro-optic quantum memory for light using two-level atoms.

PubMed

Hétet, G; Longdell, J J; Alexander, A L; Lam, P K; Sellars, M J

2008-01-18

We present a simple quantum memory scheme that allows for the storage of a light field in an ensemble of two-level atoms. The technique is analogous to the NMR gradient echo for which the imprinting and recalling of the input field are performed by controlling a linearly varying broadening. Our protocol is perfectly efficient in the limit of high optical depths and the output pulse is emitted in the forward direction. We provide a numerical analysis of the protocol together with an experiment performed in a solid state system. In close agreement with our model, the experiment shows a total efficiency of up to 15%, and a recall efficiency of 26%. We suggest simple realizable improvements for the experiment to surpass the no-cloning limit.

Non-thermalization in trapped atomic ion spin chains

NASA Astrophysics Data System (ADS)

Hess, P. W.; Becker, P.; Kaplan, H. B.; Kyprianidis, A.; Lee, A. C.; Neyenhuis, B.; Pagano, G.; Richerme, P.; Senko, C.; Smith, J.; Tan, W. L.; Zhang, J.; Monroe, C.

2017-10-01

Linear arrays of trapped and laser-cooled atomic ions are a versatile platform for studying strongly interacting many-body quantum systems. Effective spins are encoded in long-lived electronic levels of each ion and made to interact through laser-mediated optical dipole forces. The advantages of experiments with cold trapped ions, including high spatio-temporal resolution, decoupling from the external environment and control over the system Hamiltonian, are used to measure quantum effects not always accessible in natural condensed matter samples. In this review, we highlight recent work using trapped ions to explore a variety of non-ergodic phenomena in long-range interacting spin models, effects that are heralded by the memory of out-of-equilibrium initial conditions. We observe long-lived memory in static magnetizations for quenched many-body localization and prethermalization, while memory is preserved in the periodic oscillations of a driven discrete time crystal state. This article is part of the themed issue 'Breakdown of ergodicity in quantum systems: from solids to synthetic matter'.

Non-thermalization in trapped atomic ion spin chains.

PubMed

Hess, P W; Becker, P; Kaplan, H B; Kyprianidis, A; Lee, A C; Neyenhuis, B; Pagano, G; Richerme, P; Senko, C; Smith, J; Tan, W L; Zhang, J; Monroe, C

2017-12-13

Linear arrays of trapped and laser-cooled atomic ions are a versatile platform for studying strongly interacting many-body quantum systems. Effective spins are encoded in long-lived electronic levels of each ion and made to interact through laser-mediated optical dipole forces. The advantages of experiments with cold trapped ions, including high spatio-temporal resolution, decoupling from the external environment and control over the system Hamiltonian, are used to measure quantum effects not always accessible in natural condensed matter samples. In this review, we highlight recent work using trapped ions to explore a variety of non-ergodic phenomena in long-range interacting spin models, effects that are heralded by the memory of out-of-equilibrium initial conditions. We observe long-lived memory in static magnetizations for quenched many-body localization and prethermalization, while memory is preserved in the periodic oscillations of a driven discrete time crystal state.This article is part of the themed issue 'Breakdown of ergodicity in quantum systems: from solids to synthetic matter'. © 2017 The Author(s).

Innovative microwave design leads to smart, small EW systems

NASA Astrophysics Data System (ADS)

Niehenke, Edward C.

1988-02-01

An account is given of the state-of-the-art in microwave component and system design for EW systems, whose size and weight has been progressively reduced in recent years as a result of continuing design innovation in microwave circuitry. Typically, AI-function computers are employed to control microwave functions in a way that allows rapid RAM or ROM software modification to meet new performance requirements, thereby obviating hardware modifications. Attention is given to high-isolation GaAs MMIC filters, switches and amplifiers, frequency converters, instantaneous frequency measurement systems, frequency translators, digital RF memories, and high effective radiated power solid-state active antenna arrays.

Towards flexible solid-state supercapacitors for smart and wearable electronics.

PubMed

Dubal, Deepak P; Chodankar, Nilesh R; Kim, Do-Heyoung; Gomez-Romero, Pedro

2018-03-21

Flexible solid-state supercapacitors (FSSCs) are frontrunners in energy storage device technology and have attracted extensive attention owing to recent significant breakthroughs in modern wearable electronics. In this study, we review the state-of-the-art advancements in FSSCs to provide new insights on mechanisms, emerging electrode materials, flexible gel electrolytes and novel cell designs. The review begins with a brief introduction on the fundamental understanding of charge storage mechanisms based on the structural properties of electrode materials. The next sections briefly summarise the latest progress in flexible electrodes (i.e., freestanding and substrate-supported, including textile, paper, metal foil/wire and polymer-based substrates) and flexible gel electrolytes (i.e., aqueous, organic, ionic liquids and redox-active gels). Subsequently, a comprehensive summary of FSSC cell designs introduces some emerging electrode materials, including MXenes, metal nitrides, metal-organic frameworks (MOFs), polyoxometalates (POMs) and black phosphorus. Some potential practical applications, such as the development of piezoelectric, photo-, shape-memory, self-healing, electrochromic and integrated sensor-supercapacitors are also discussed. The final section highlights current challenges and future perspectives on research in this thriving field.

Functionally Graded Metal-Metal Composite Structures

NASA Technical Reports Server (NTRS)

Brice, Craig A. (Inventor)

2017-01-01

Methods and devices are disclosed for creating a multiple alloy composite structure by forming a three-dimensional arrangement of a first alloy composition in which the three-dimensional arrangement has a substantially open and continuous porosity. The three-dimensional arrangement of the first alloy composition is infused with at least a second alloy composition, where the second alloy composition comprises a shape memory alloy. The three-dimensional arrangement is consolidated into a fully dense solid structure, and the original shape of the second alloy composition is set for reversible transformation. Strain is applied to the fully dense solid structure, which is treated with heat so that the shape memory alloy composition becomes memory activated to recover the original shape. An interwoven composite of the first alloy composition and the memory-activated second alloy composition is thereby formed in the multiple alloy composite structure.

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits

NASA Astrophysics Data System (ADS)

Yu, Leo; Natarajan, Chandra M.; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S.; Tanner, Michael G.; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H.; Fejer, Martin M.; Yamamoto, Yoshihisa

2015-11-01

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances.

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits.

PubMed

Yu, Leo; Natarajan, Chandra M; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S; Tanner, Michael G; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H; Fejer, Martin M; Yamamoto, Yoshihisa

2015-11-24

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances.

Memory Golf Clubs

NASA Technical Reports Server (NTRS)

1997-01-01

Memory Corporation's investigation of shape memory effect, stemming from Marshall Space Flight Center contracts to study materials for the space station, has aided in the development of Zeemet, a proprietary, high-damping shape memory alloy for the golf industry. The Nicklaus Golf Company has created a new line of golf clubs using Zeemet inserts. Its superelastic and high damping attributes translate into more spin on the ball, greater control, and a solid feel.

Computer-intensive simulation of solid-state NMR experiments using SIMPSON.

PubMed

Tošner, Zdeněk; Andersen, Rasmus; Stevensson, Baltzar; Edén, Mattias; Nielsen, Niels Chr; Vosegaard, Thomas

2014-09-01

Conducting large-scale solid-state NMR simulations requires fast computer software potentially in combination with efficient computational resources to complete within a reasonable time frame. Such simulations may involve large spin systems, multiple-parameter fitting of experimental spectra, or multiple-pulse experiment design using parameter scan, non-linear optimization, or optimal control procedures. To efficiently accommodate such simulations, we here present an improved version of the widely distributed open-source SIMPSON NMR simulation software package adapted to contemporary high performance hardware setups. The software is optimized for fast performance on standard stand-alone computers, multi-core processors, and large clusters of identical nodes. We describe the novel features for fast computation including internal matrix manipulations, propagator setups and acquisition strategies. For efficient calculation of powder averages, we implemented interpolation method of Alderman, Solum, and Grant, as well as recently introduced fast Wigner transform interpolation technique. The potential of the optimal control toolbox is greatly enhanced by higher precision gradients in combination with the efficient optimization algorithm known as limited memory Broyden-Fletcher-Goldfarb-Shanno. In addition, advanced parallelization can be used in all types of calculations, providing significant time reductions. SIMPSON is thus reflecting current knowledge in the field of numerical simulations of solid-state NMR experiments. The efficiency and novel features are demonstrated on the representative simulations. Copyright © 2014 Elsevier Inc. All rights reserved.

Relationship between crystal structure and solid-state properties of pharmaceuticals

NASA Astrophysics Data System (ADS)

Sheth, Agam R.

This thesis strives to understand the structure-property relationships of some pharmaceutical crystals at the molecular level with emphasis on the effect of secondary processing on the solid phase. Using single crystal X-ray diffractometry (SCXRD), the structure of warfarin sodium 2-propanol adduct (W) was established to be a true solvate, contrary to previous reports. Using dynamic water vapor sorption, optical and environmental scanning electron microscopy, SCXRD, powder X-ray diffractometry (PXRD), volume computations and molecular modeling, the effect of relative humidity and temperature on the crystal structure of W was investigated. Ab initio calculations on piroxicam showed that the difference in energy between the two polymorphs, I and II, arises predominantly from the difference between their lattice energies. The detailed hydrogen bonding networks of the two polymorphs are described and compared using graph sets. Despite stabilization of the polymorphs by hydrogen bonds, pair-wise distribution function transforms show a loss of polymorphic memory upon cryogrinding the two polymorphs, leading to a difference in recrystallization behavior between amorphous piroxicam prepared from polymorphs I and II. Structural and solid-state changes of piroxicam polymorphs under mechanical stress were investigated using cryogenic grinding, PXRD, diffuse-reflectance solid-state ultraviolet-visible spectroscopy, 13C solid-state nuclear magnetic resonance spectroscopy, and diffuse-reflectance solid-state Fourier-transform infrared spectroscopy. Intermolecular proton transfer was found to accompany changes in phase and color observed upon cryogrinding the two polymorphs. Model-free and model-fitting studies of the dehydration kinetics of piroxicam monohydrate (PM) showed the dependence of activation energy ( Ea) on both isothermal and non-isothermal heating conditions, and on the fraction of conversion. In the constant-E a region, isothermal dehydration follows the two-dimensional phase boundary model, while non-isothermal dehydration follows a mechanism intermediate between two- and three-dimensional diffusion that cannot be described by any of the common models. Structural studies suggest that the complex hydrogen bond pattern in PM is responsible for the observed dehydration behavior. Ab initio calculations provide an explanation for the changes in the molecular and crystal structures accompanying the reversible change in hydration state between anhydrous piroxicam Form I and PM. The thesis further demonstrates the utility of model-free analysis in describing complex dehydration kinetics.

Toward Quantum Non-demolition of nitrogen-vacancy centers in diamond

NASA Astrophysics Data System (ADS)

Hodges, Jonathan; Jiang, Liang; Maze, Jeronimo; Lukin, Mikhail

2009-05-01

The nitrogen-vacancy color center (NVC) in diamond, which possesses a long-lived electronic spin (S=1) ground state with optical addressability, is a promising platform for quantum networks, single-photon sources, and nanoscale magnetometers. Here, we make use of a nuclear spin based quantum memory to demonstrate quantum non-demolition measurement of a solid-state spin qubit. By entangling the electron spin with a polarized carbon-13 spin (I=1/2) in the lattice, we have repeated optical measurement of the electron spin for the polarization lifetime of the nuclear spin. We show relative improvements in signal-to-noise of greater than 300%. These techniques can be used to improve the sensitivity of NVC magnetometers.

Robustness of edge states in topological quantum dots against global electric field

NASA Astrophysics Data System (ADS)

Qu, Jin-Xian; Zhang, Shu-Hui; Liu, Ding-Yang; Wang, Ping; Yang, Wen

2017-07-01

The topological insulator has attracted increasing attention as a new state of quantum matter featured by the symmetry-protected edge states. Although the qualitative robustness of the edge states against local perturbations has been well established, it is not clear how these topological edge states respond quantitatively to a global perturbation. Here, we study the response of topological edge states in a HgTe quantum dot to an external in-plane electric field—a paradigmatic global perturbation in solid-state environments. We find that the stability of the topological edge state could be larger than that of the ground bulk state by several orders of magnitudes. This robustness may be verified by standard transport measurements in the Coulomb blockage regime. Our work may pave the way towards utilizing these topological edge states as stable memory devices for charge and/or spin information and stable emitter of single terahertz photons or entangled terahertz photon pairs for quantum communication.

Solid State Research, 1981-1

DTIC Science & Technology

1981-02-15

Pine J. Mol. Spectrosc. 84, 132 v I + v 3 Combination Band of SO 2 M. Dang-Nhu* (1980) 5076 Formation of the XeBr Exciplex D. J. Ehrlich J. Chem. Phys...heteroepitaxial Ge film deposited on (I00>Si at Ts 550*C. III 0 5P.m 130- ol III --- SURFACEIGe,-,Si, ALLOY (b) * *I (b)) ,0, ++, p...:l: Fig. 111-8. (a) Bright...with the 32 input samples in the CCD ( ol wells. Center cross section: With the write voltage applied to the memory gate and the first transfer gate

Applications of satellite data relay to problems of field seismology

NASA Technical Reports Server (NTRS)

Webster, W. J., Jr.; Miller, W. H.; Whitley, R.; Allenby, R. J.; Dennison, R. T.

1980-01-01

A seismic signal processor was developed and tested for use with the NOAA-GOES satellite data collection system. Performance tests on recorded, as well as real time, short period signals indicate that the event recognition technique used is nearly perfect in its rejection of cultural signals and that data can be acquired in many swarm situations with the use of solid state buffer memories. Detailed circuit diagrams are provided. The design of a complete field data collection platform is discussed and the employment of data collection platforms in seismic network is reviewed.

Theory of Spectroscopy and Dynamics in Laser-Irradiated Adspecies-Surface Systems.

DTIC Science & Technology

1986-07-01

integrodifferential equation of the Volterra type. P is the occupation probability of the vibrational state Is> of the adbond, and the memory kernrl KS(r...Incorporate the phonon (p) and the radiation (r) terms : K I= K 5 , + . F~rxa Debye model of~the solid, we have obtained He phonon portions K P1 in closed...of interest. Thus, KSS,(t)= OSS,(t) + K ( (3) The second term on the right-hand side is time-independent. If it were a delta function also, we would

Trends in solid state electronics, part 2

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1972-01-01

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Multimode cavity-assisted quantum storage via continuous phase-matching control

NASA Astrophysics Data System (ADS)

Kalachev, Alexey; Kocharovskaya, Olga

2013-09-01

A scheme for spatial multimode quantum memory is developed such that spatial-temporal structure of a weak signal pulse can be stored and recalled via cavity-assisted off-resonant Raman interaction with a strong angular-modulated control field in an extended Λ-type atomic ensemble. It is shown that effective multimode storage is possible when the Raman coherence spatial grating involves wave vectors with different longitudinal components relative to the paraxial signal field. The possibilities of implementing the scheme in the solid-state materials are discussed.

The Joint NASA/FAA/DoD Conference on Aging Aircraft (2nd) Held in Williamsburg, Virginia on 31 August-3 September 1998. Part 1

DTIC Science & Technology

1999-01-01

the previous sortie. 47 Portable Maintenance Data Store (PMDS). The PMDS is a solid state memory device approximately the same size as an...Engine Titanium Consortium Portable Scanner Bridging the gap between rapid imaging and robots is a class of inspection devices called scanners...patterns on the image to change . Thus, a region approximately the size of the sensor element (3 inches in diameter) can be inspected at one time, and an

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Nanophotonic photon echo memory based on rare-earth-doped crystals

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan; Miyazono, Evan; Faraon, Andrei; Caltech nano quantum optics Team

2015-03-01

Rare earth ions (REIs) are promising candidates for implementing solid-state quantum memories and quantum repeater devices. Their high spectral stability and long coherence times make REIs a good choice for integration in an on-chip quantum nano-photonic platform. We report the coupling of the 883 nm transition of Neodymium (Nd) to a Yttrium orthosilicate (YSO) photonic crystal nano-beam resonator, achieving Purcell enhanced spontaneous emission by 21 times and increased optical absorption. Photon echoes were observed in nano-beams of different doping concentrations, yielding optical coherence times T2 up to 80 μs that are comparable to unprocessed bulk samples. This indicates the remarkable coherence properties of Nd are preserved during nanofabrication, therefore opening the possibility of efficient on-chip optical quantum memories. The nano-resonator with mode volume of 1 . 6(λ / n) 3 was fabricated using focused ion beam, and a quality factor of 3200 was measured. Purcell enhanced absorption of 80% by an ensemble of ~ 1 × 106 ions in the resonator was measured, which fulfills the cavity impedance matching condition that is necessary to achieve quantum storage of photons with unity efficiency.

Memory colours and colour quality evaluation of conventional and solid-state lamps.

PubMed

Smet, Kevin A G; Ryckaert, Wouter R; Pointer, Michael R; Deconinck, Geert; Hanselaer, Peter

2010-12-06

A colour quality metric based on memory colours is presented. The basic idea is simple. The colour quality of a test source is evaluated as the degree of similarity between the colour appearance of a set of familiar objects and their memory colours. The closer the match, the better the colour quality. This similarity was quantified using a set of similarity distributions obtained by Smet et al. in a previous study. The metric was validated by calculating the Pearson and Spearman correlation coefficients between the metric predictions and the visual appreciation results obtained in a validation experiment conducted by the authors as well those obtained in two independent studies. The metric was found to correlate well with the visual appreciation of the lighting quality of the sources used in the three experiments. Its performance was also compared with that of the CIE colour rendering index and the NIST colour quality scale. For all three experiments, the metric was found to be significantly better at predicting the correct visual rank order of the light sources (p < 0.1).

Prediction of precipitate evolution and martensite transformation in Ti-Ni-Cu shape memory alloys by computational thermodynamics

NASA Astrophysics Data System (ADS)

Povoden-Karadeniz, A.; Cirstea, D. C.; Kozeschnik, E.

2016-04-01

Ti-50Ni to Ti-55Ni (at.%) can be termed as the pioneer of shape memory alloys (SMA). Intermetallic precipitates play an important role for strengthening. Their influence on the start temperature of the martensitic transformation is a crucial property for the shape memory effect. Efforts for increasing the martensite start temperature include replacement of a part of Ni atoms by Cu. The influence of Cu-addition to Ti-Ni SMA on T0- temperatures and the character of the austenite-martensite transformation is evaluated using a new thermodynamic database for the Ti-Ni-system extended by Cu. Trends of precipitation of intermetallic phases are simulated by combining the assessed thermodynamics of the Ti-Ni-Cu system with assessed diffusion mobility data and kinetic models, as implemented in the solid-state transformation software MatCalc and are presented in the form of time-temperature-precipitation diagrams. Thermodynamic equilibrium considerations, complemented by predictive thermo-kinetic precipitation simulation, facilitates SMA alloy design and definition of optimized aging conditions.

Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs

NASA Astrophysics Data System (ADS)

Tokutomi, Tsukasa; Tanakamaru, Shuhei; Iwasaki, Tomoko Ogura; Takeuchi, Ken

2015-09-01

To improve the reliability of NAND Flash memory based solid-state drives (SSDs), error-prediction LDPC (EP-LDPC) has been proposed for multi-level-cell (MLC) NAND Flash memory (Tanakamaru et al., 2012, 2013), which is effective for long retention times. However, EP-LDPC is not as effective for triple-level cell (TLC) NAND Flash memory, because TLC NAND Flash has higher error rates and is more sensitive to program-disturb error. Therefore, advanced error-prediction LDPC (AEP-LDPC) has been proposed for TLC NAND Flash memory (Tokutomi et al., 2014). AEP-LDPC can correct errors more accurately by precisely describing the error phenomena. In this paper, the effects of AEP-LDPC are investigated in a 2×nm TLC NAND Flash memory with temperature characterization. Compared with LDPC-with-BER-only, the SSD's data-retention time is increased by 3.4× and 9.5× at room-temperature (RT) and 85 °C, respectively. Similarly, the acceptable BER is increased by 1.8× and 2.3×, respectively. Moreover, AEP-LDPC can correct errors with pre-determined tables made at higher temperatures to shorten the measurement time before shipping. Furthermore, it is found that one table can cover behavior over a range of temperatures in AEP-LDPC. As a result, the total table size can be reduced to 777 kBytes, which makes this approach more practical.

Examining Recall Memory in Infancy and Early Childhood Using the Elicited Imitation Paradigm.

PubMed

Lukowski, Angela F; Milojevich, Helen M

2016-04-28

The ability to recall the past allows us to report on details of previous experiences, from the everyday to the significant. Because recall memory is commonly assessed using verbal report paradigms in adults, studying the development of this ability in preverbal infants and children proved challenging. Over the past 30 years, researchers have developed a non-verbal means of assessing recall memory known as the elicited or deferred imitation paradigm. In one variant of the procedure, participants are presented with novel three-dimensional stimuli for a brief baseline period before a researcher demonstrates a series of actions that culminate in an end- or goal-state. The participant is allowed to imitate the demonstrated actions immediately, after a delay, or both. Recall performance is then compared to baseline or to performance on novel control sequences presented at the same session; memory can be assessed for the individual target actions and the order in which they were completed. This procedure is an accepted analogue to the verbal report techniques used with adults, and it has served to establish a solid foundation of the nature of recall memory in infancy and early childhood. In addition, the elicited or deferred imitation procedure has been modified and adapted to answer questions relevant to other aspects of cognitive functioning. The broad utility and application of imitation paradigms is discussed, along with limitations of the approach and directions for future research.

Cytomegalovirus-Responsive CD8+ T Cells Expand After Solid Organ Transplantation in the Absence of CMV Disease.

PubMed

Higdon, L E; Trofe-Clark, J; Liu, S; Margulies, K B; Sahoo, M K; Blumberg, E; Pinsky, B A; Maltzman, J S

2017-08-01

Cytomegalovirus (CMV) is a major cause of morbidity and mortality in solid organ transplant recipients. Approximately 60% of adults are CMV seropositive, indicating previous exposure. Following resolution of the primary infection, CMV remains in a latent state. Reactivation is controlled by memory T cells in healthy individuals; transplant recipients have reduced memory T cell function due to chronic immunosuppressive therapies. In this study, CD8 + T cell responses to CMV polypeptides immediate-early-1 and pp65 were analyzed in 16 CMV-seropositive kidney and heart transplant recipients longitudinally pretransplantation and posttransplantation. All patients received standard of care maintenance immunosuppression, antiviral prophylaxis, and CMV viral load monitoring, with approximately half receiving T cell-depleting induction therapy. The frequency of CMV-responsive CD8 + T cells, defined by the production of effector molecules in response to CMV peptides, increased during the course of 1 year posttransplantation. The increase commenced after the completion of antiviral prophylaxis, and these T cells tended to be terminally differentiated effector cells. Based on this small cohort, these data suggest that even in the absence of disease, antigenic exposure may continually shape the CMV-responsive T cell population posttransplantation. © 2017 The American Society of Transplantation and the American Society of Transplant Surgeons.

Quantum Storage of Three-Dimensional Orbital-Angular-Momentum Entanglement in a Crystal.

PubMed

Zhou, Zong-Quan; Hua, Yi-Lin; Liu, Xiao; Chen, Geng; Xu, Jin-Shi; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2015-08-14

Here we present the quantum storage of three-dimensional orbital-angular-momentum photonic entanglement in a rare-earth-ion-doped crystal. The properties of the entanglement and the storage process are confirmed by the violation of the Bell-type inequality generalized to three dimensions after storage (S=2.152±0.033). The fidelity of the memory process is 0.993±0.002, as determined through complete quantum process tomography in three dimensions. An assessment of the visibility of the stored weak coherent pulses in higher-dimensional spaces demonstrates that the memory is highly reliable for 51 spatial modes. These results pave the way towards the construction of high-dimensional and multiplexed quantum repeaters based on solid-state devices. The multimode capacity of rare-earth-based optical processors goes beyond the temporal and the spectral degree of freedom, which might provide a useful tool for photonic information processing.

PCM-Based Durable Write Cache for Fast Disk I/O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhuo; Wang, Bin; Carpenter, Patrick

2012-01-01

Flash based solid-state devices (FSSDs) have been adopted within the memory hierarchy to improve the performance of hard disk drive (HDD) based storage system. However, with the fast development of storage-class memories, new storage technologies with better performance and higher write endurance than FSSDs are emerging, e.g., phase-change memory (PCM). Understanding how to leverage these state-of-the-art storage technologies for modern computing systems is important to solve challenging data intensive computing problems. In this paper, we propose to leverage PCM for a hybrid PCM-HDD storage architecture. We identify the limitations of traditional LRU caching algorithms for PCM-based caches, and develop amore » novel hash-based write caching scheme called HALO to improve random write performance of hard disks. To address the limited durability of PCM devices and solve the degraded spatial locality in traditional wear-leveling techniques, we further propose novel PCM management algorithms that provide effective wear-leveling while maximizing access parallelism. We have evaluated this PCM-based hybrid storage architecture using applications with a diverse set of I/O access patterns. Our experimental results demonstrate that the HALO caching scheme leads to an average reduction of 36.8% in execution time compared to the LRU caching scheme, and that the SFC wear leveling extends the lifetime of PCM by a factor of 21.6.« less

Merging of long-term memories in an insect.

PubMed

Hunt, Kathryn L; Chittka, Lars

2015-03-16

Research on comparative cognition has largely focused on successes and failures of animals to solve certain cognitive tasks, but in humans, memory errors can be more complex than simple failures to retrieve information [1, 2]. The existence of various types of "false memories," in which individuals remember events that they have never actually encountered, are now well established in humans [3, 4]. We hypothesize that such systematic memory errors may be widespread in animals whose natural lifestyle involves the processing and recollection of memories for multiple stimuli [5]. We predict that memory traces for various stimuli may "merge," such that features acquired in distinct bouts of training are combined in an animal's mind, so that stimuli that have never been viewed before, but are a combination of the features presented in training, may be chosen during recall. We tested this using bumblebees, Bombus terrestris. When individuals were first trained to a solid single-colored stimulus followed by a black and white (b/w)-patterned stimulus, a subsequent preference for the last entrained stimulus was found in both short-term- and long-term-memory tests. However, when bees were first trained to b/w-patterned stimuli followed by solid single-colored stimuli and were tested in long-term-memory tests 1 or 3 days later, they only initially preferred the most recently rewarded stimulus, and then switched their preference to stimuli that combined features from the previous color and pattern stimuli. The observed merging of long-term memories is thus similar to the memory conjunction error found in humans [6]. Copyright © 2015 Elsevier Ltd. All rights reserved.

Chromatographic enantioseparation by poly(biphenylylacetylene) derivatives with memory of both axial chirality and macromolecular helicity.

PubMed

Ishidate, Ryoma; Ikai, Tomoyuki; Kanoh, Shigeyoshi; Yashima, Eiji; Maeda, Katsuhiro

2017-03-01

Novel poly(biphenylylacetylene) derivatives bearing two acetyloxy groups at the 2- and 2'-positions and an alkoxycarbonyl group at the 4'-position of the biphenyl pendants (poly-Ac's) were synthesized by the polymerization of the corresponding biphenylylacetylenes using a rhodium catalyst. The obtained stereoregular (cis-transoidal) poly-Ac's folded into a predominantly one-handed helical conformation accompanied by a preferred-handed axially twisted conformation of the biphenyl pendants through noncovalent interactions with a chiral alcohol and both the induced main-chain helicity and the pendant axial chirality were maintained, that is, memorized, after complete removal of the chiral alcohol. The stability of the helicity memory of the poly-Ac's in a solution was lower than that of the analogous poly(biphenylylacetylene)s bearing two methoxymethoxy groups at the 2- and 2'-positions of the biphenyl pendants (poly-MOM's). In the solid state, however, the helicity memory of the poly-Ac's was much more stable and showed a better chiral recognition ability toward several racemates than that of the previously reported poly-MOM when used as a chiral stationary phase for high-performance liquid chromatography. In particular, the poly-Ac-based CSP with a helicity memory efficiently separated racemic benzoin derivatives into enantiomers. © 2017 Wiley Periodicals, Inc.

Rise of Racetrack Memory! Domain Wall Spin-Orbitronics

NASA Astrophysics Data System (ADS)

Parkin, Stuart

Memory-storage devices based on the current controlled motion of a series of domain walls (DWs) in magnetic racetracks promise performance and reliability beyond that of conventional magnetic disk drives and solid state storage devices (1). Racetracks that are formed from atomically thin, perpendicularly magnetized nano-wires, interfaced with adjacent metal layers with high spin-orbit coupling, give rise to domain walls that exhibit a chiral Néel structure (2). These DWs can be moved very efficiently with current via chiral spin-orbit torques (2,3). Record-breaking current-induced DW speeds exceeding 1,000 m/sec are found in synthetic antiferromagnetic structures (3) in which the net magnetization of the DWs is tuned to almost zero, making them ``invisible''. Based on these recent discoveries, Racetrack Memory devices have the potential to operate on picosecond timescales and at densities more than 100 times greater than other memory technologies. (1) S.S.P. Parkin et al., Science 320, 5873 (2008); S.S.P. Parkin and S.-H. Yang, Nat. Nano. 10, 195 (2015). (2) K.-S. Ryu metal. Nat. Nano. 8, 527 (2013). (3) S.-H. Yang, K.-S. Ryu and S.S.P. Parkin, Nat. Nano. 10, 221 (2015). (4). S.S.P. Parkin, Phys. Rev. Lett. 67, 3598 (1991).

Don’t make cache too complex: A simple probability-based cache management scheme for SSDs

PubMed Central

Cho, Sangyeun; Choi, Jongmoo

2017-01-01

Solid-state drives (SSDs) have recently become a common storage component in computer systems, and they are fueled by continued bit cost reductions achieved with smaller feature sizes and multiple-level cell technologies. However, as the flash memory stores more bits per cell, the performance and reliability of the flash memory degrade substantially. To solve this problem, a fast non-volatile memory (NVM-)based cache has been employed within SSDs to reduce the long latency required to write data. Absorbing small writes in a fast NVM cache can also reduce the number of flash memory erase operations. To maximize the benefits of an NVM cache, it is important to increase the NVM cache utilization. In this paper, we propose and study ProCache, a simple NVM cache management scheme, that makes cache-entrance decisions based on random probability testing. Our scheme is motivated by the observation that frequently written hot data will eventually enter the cache with a high probability, and that infrequently accessed cold data will not enter the cache easily. Owing to its simplicity, ProCache is easy to implement at a substantially smaller cost than similar previously studied techniques. We evaluate ProCache and conclude that it achieves comparable performance compared to a more complex reference counter-based cache-management scheme. PMID:28358897

Don't make cache too complex: A simple probability-based cache management scheme for SSDs.

PubMed

Baek, Seungjae; Cho, Sangyeun; Choi, Jongmoo

2017-01-01

Solid-state drives (SSDs) have recently become a common storage component in computer systems, and they are fueled by continued bit cost reductions achieved with smaller feature sizes and multiple-level cell technologies. However, as the flash memory stores more bits per cell, the performance and reliability of the flash memory degrade substantially. To solve this problem, a fast non-volatile memory (NVM-)based cache has been employed within SSDs to reduce the long latency required to write data. Absorbing small writes in a fast NVM cache can also reduce the number of flash memory erase operations. To maximize the benefits of an NVM cache, it is important to increase the NVM cache utilization. In this paper, we propose and study ProCache, a simple NVM cache management scheme, that makes cache-entrance decisions based on random probability testing. Our scheme is motivated by the observation that frequently written hot data will eventually enter the cache with a high probability, and that infrequently accessed cold data will not enter the cache easily. Owing to its simplicity, ProCache is easy to implement at a substantially smaller cost than similar previously studied techniques. We evaluate ProCache and conclude that it achieves comparable performance compared to a more complex reference counter-based cache-management scheme.

Oscillations in Spurious States of the Associative Memory Model with Synaptic Depression

NASA Astrophysics Data System (ADS)

Murata, Shin; Otsubo, Yosuke; Nagata, Kenji; Okada, Masato

2014-12-01

The associative memory model is a typical neural network model that can store discretely distributed fixed-point attractors as memory patterns. When the network stores the memory patterns extensively, however, the model has other attractors besides the memory patterns. These attractors are called spurious memories. Both spurious states and memory states are in equilibrium, so there is little difference between their dynamics. Recent physiological experiments have shown that the short-term dynamic synapse called synaptic depression decreases its efficacy of transmission to postsynaptic neurons according to the activities of presynaptic neurons. Previous studies revealed that synaptic depression destabilizes the memory states when the number of memory patterns is finite. However, it is very difficult to study the dynamical properties of the spurious states if the number of memory patterns is proportional to the number of neurons. We investigate the effect of synaptic depression on spurious states by Monte Carlo simulation. The results demonstrate that synaptic depression does not affect the memory states but mainly destabilizes the spurious states and induces periodic oscillations.

Switching dynamics of TaOx-based threshold switching devices

NASA Astrophysics Data System (ADS)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction.

PubMed

Lau, H W; Tan, O K; Liu, Y; Trigg, D A; Chen, T P

2006-08-28

In this work, we report on the fabrication of tetraethylorthosilicate (TEOS) thin dielectric film containing silicon nanocrystals (Si nc), synthesized by solid-state reaction, in a capacitor structure. A metal-insulator-semi-conductor (MIS) capacitor, with 28 nm thick Si nc in a TEOS thin film, has been fabricated. For this MIS, both electron and hole trapping in the Si nc are possible, depending on the polarity of the bias voltage. A V(FB) shift greater than 1 V can be experienced by a bias voltage of 16 V applied to the metal electrode for 1 s. Though there is no top control oxide, the discharge time for 10% of charges can be up to 4480 s when it is biased at 16 V for 1 s. It is further demonstrated that charging and discharging mechanisms are due to the Si nc rather than the TEOS oxide defects. This form of Si nc in a TEOS thin film capacitor provides the possibility of memory applications at low cost.

Evaluation of Origin Ensemble algorithm for image reconstruction for pixelated solid-state detectors with large number of channels

NASA Astrophysics Data System (ADS)

Kolstein, M.; De Lorenzo, G.; Mikhaylova, E.; Chmeissani, M.; Ariño, G.; Calderón, Y.; Ozsahin, I.; Uzun, D.

2013-04-01

The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated solid-state technology for nuclear medicine applications. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). For PET scanners, conventional algorithms like Filtered Back-Projection (FBP) and Ordered Subset Expectation Maximization (OSEM) are straightforward to use and give good results. However, FBP presents difficulties for detectors with limited angular coverage like PEM and Compton gamma cameras, whereas OSEM has an impractically large time and memory consumption for a Compton gamma camera with a large number of channels. In this article, the Origin Ensemble (OE) algorithm is evaluated as an alternative algorithm for image reconstruction. Monte Carlo simulations of the PET design are used to compare the performance of OE, FBP and OSEM in terms of the bias, variance and average mean squared error (MSE) image quality metrics. For the PEM and Compton camera designs, results obtained with OE are presented.

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits

PubMed Central

Yu, Leo; Natarajan, Chandra M.; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S.; Tanner, Michael G.; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H.; Fejer, Martin M.; Yamamoto, Yoshihisa

2015-01-01

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances. PMID:26597223

A solid-state digital temperature recorder for space use

NASA Technical Reports Server (NTRS)

Westbrook, R. M.; Bennett, L. D.; Steinhaver, R. A.; Deboo, G. J.

1981-01-01

A solid-state, digital, temperature recorder has been developed for use in space experiments. The recorder is completely self-contained and includes a temperature sensor; all necessary electronics for signal conditioning, processing, storing, control and timing; and a battery power supply. No electrical interfacing with the particular spacecraft on which the unit is used is required. The recorder is small, light, and sturdy, and has no moving parts. It uses only biocompatible materials and has passed vibration and shock spaceflight qualification tests. The unit is capable of storing 2048, -10 to +45 C, 8-bit temperature measurements taken at intervals selectable by factors of 2 from 1.875 to 240 min; data can be retained for at least 6 months. The basic recorder can be simplified to accommodate a variety of applications by adding memory to allow more data to be recorded, by changing the front end to permit measurements other than temperature to be made, and by using different batteries to realize various operating periods. Stored flight data are read out from the recorder by means of a ground read-out unit.

Reconceptualizing Working Memory in Educational Research

ERIC Educational Resources Information Center

Fenesi, Barbara; Sana, Faria; Kim, Joseph A.; Shore, David I.

2015-01-01

In recent years, research from cognitive science has provided a solid theoretical framework to develop evidence-based interventions in education. In particular, research into reading, writing, language, mathematics and multimedia learning has been guided by the application of Baddeley's multicomponent model of working memory. However, an…

Moore's law realities for recording systems and memory storage components: HDD, tape, NAND, and optical

NASA Astrophysics Data System (ADS)

Fontana, Robert E.; Decad, Gary M.

2018-05-01

This paper describes trends in the storage technologies associated with Linear Tape Open (LTO) Tape cartridges, hard disk drives (HDD), and NAND Flash based storage devices including solid-state drives (SSD). This technology discussion centers on the relationship between cost/bit and bit density and, specifically on how the Moore's Law perception that areal density doubling and cost/bit halving every two years is no longer being achieved for storage based components. This observation and a Moore's Law Discussion are demonstrated with data from 9-year storage technology trends, assembled from publically available industry reporting sources.

Utilization of parallel processing in solving the inviscid form of the average-passage equation system for multistage turbomachinery

NASA Technical Reports Server (NTRS)

Mulac, Richard A.; Celestina, Mark L.; Adamczyk, John J.; Misegades, Kent P.; Dawson, Jef M.

1987-01-01

A procedure is outlined which utilizes parallel processing to solve the inviscid form of the average-passage equation system for multistage turbomachinery along with a description of its implementation in a FORTRAN computer code, MSTAGE. A scheme to reduce the central memory requirements of the program is also detailed. Both the multitasking and I/O routines referred to are specific to the Cray X-MP line of computers and its associated SSD (Solid-State Disk). Results are presented for a simulation of a two-stage rocket engine fuel pump turbine.

Molecular dynamics simulations of oxide memory resistors (memristors).

PubMed

Savel'ev, S E; Alexandrov, A S; Bratkovsky, A M; Williams, R Stanley

2011-06-24

Reversible bipolar nanoswitches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion. The simulations show that the 'localized conductive filaments' and 'uniform push/pull' models for memristive switching are actually two extremes of the one stochastic mechanism.

Quantification of the memory effect of steady-state currents from interaction-induced transport in quantum systems

NASA Astrophysics Data System (ADS)

Lai, Chen-Yen; Chien, Chih-Chun

2017-09-01

Dynamics of a system in general depends on its initial state and how the system is driven, but in many-body systems the memory is usually averaged out during evolution. Here, interacting quantum systems without external relaxations are shown to retain long-time memory effects in steady states. To identify memory effects, we first show quasi-steady-state currents form in finite, isolated Bose- and Fermi-Hubbard models driven by interaction imbalance and they become steady-state currents in the thermodynamic limit. By comparing the steady-state currents from different initial states or ramping rates of the imbalance, long-time memory effects can be quantified. While the memory effects of initial states are more ubiquitous, the memory effects of switching protocols are mostly visible in interaction-induced transport in lattices. Our simulations suggest that the systems enter a regime governed by a generalized Fick's law and memory effects lead to initial-state-dependent diffusion coefficients. We also identify conditions for enhancing memory effects and discuss possible experimental implications.

Production and characterization of pure cryogenic inertial fusion targets

NASA Astrophysics Data System (ADS)

Boyd, B. A.; Kamerman, G. W.

An experimental cryogenic inertial fusion target generator and two optical techniques for automated target inspection are described. The generator produces 100 microns diameter solid hydrogen spheres at a rate compatible with fueling requirements of conceptual inertial fusion power plants. A jet of liquified hydrogen is disrupted into droplets by an ultrasonically excited nozzle. The droplets solidify into microspheres while falling through a chamber maintained below the hydrogen triple point pressure. Stable operation of the generator has been demonstrated for up to three hours. The optical inspection techniques are computer aided photomicrography and coarse diffraction pattern analysis (CDPA). The photomicrography system uses a conventional microscope coupled to a computer by a solid state camera and digital image memory. The computer enhances the stored image and performs feature extraction to determine pellet parameters. The CDPA technique uses Fourier transform optics and a special detector array to perform optical processing of a target image.

Examining Recall Memory in Infancy and Early Childhood Using the Elicited Imitation Paradigm

PubMed Central

Lukowski, Angela F.; Milojevich, Helen M.

2016-01-01

The ability to recall the past allows us to report on details of previous experiences, from the everyday to the significant. Because recall memory is commonly assessed using verbal report paradigms in adults, studying the development of this ability in preverbal infants and children proved challenging. Over the past 30 years, researchers have developed a non-verbal means of assessing recall memory known as the elicited or deferred imitation paradigm. In one variant of the procedure, participants are presented with novel three-dimensional stimuli for a brief baseline period before a researcher demonstrates a series of actions that culminate in an end- or goal-state. The participant is allowed to imitate the demonstrated actions immediately, after a delay, or both. Recall performance is then compared to baseline or to performance on novel control sequences presented at the same session; memory can be assessed for the individual target actions and the order in which they were completed. This procedure is an accepted analogue to the verbal report techniques used with adults, and it has served to establish a solid foundation of the nature of recall memory in infancy and early childhood. In addition, the elicited or deferred imitation procedure has been modified and adapted to answer questions relevant to other aspects of cognitive functioning. The broad utility and application of imitation paradigms is discussed, along with limitations of the approach and directions for future research. PMID:27167994

A flavanoid component of chocolate quickly reverses an imposed memory deficit.

PubMed

Knezevic, Bogdan; Komatsuzaki, Yoshimasa; de Freitas, Emily; Lukowiak, Ken

2016-03-01

The ability to remember is influenced by environmental and lifestyle factors, such as stress and diet. A flavanol contained in chocolate, epicatechin (Epi), has been shown to enhance long-term memory (LTM) formation in Lymnaea. Combining two stressors (low-calcium pond water and crowding) blocks learning and all forms of memory; that is, this combination of environmentally relevant stressors creates a memory-unfriendly state. We tested the hypothesis that Epi will immediately reverse the memory-unfriendly state, i.e. that snails in the memory-deficit state when trained in Epi will immediately become competent to learn and form memory. We found that Epi not only reverses the memory-deficit state but also further enhances LTM formation. Thus, a naturally occurring bioactive plant compound can overcome a memory-unfriendly state. This supports the idea that bioactive substances may mitigate memory-making deficits that, for example, occur with ageing. © 2016. Published by The Company of Biologists Ltd.

In situ and nonvolatile photoluminescence tuning and nanodomain writing demonstrated by all-solid-state devices based on graphene oxide.

PubMed

Tsuchiya, Takashi; Tsuruoka, Tohru; Terabe, Kazuya; Aono, Masakazu

2015-02-24

In situ and nonvolatile tuning of photoluminescence (PL) has been achieved based on graphene oxide (GO), the PL of which is receiving much attention because of various potential applications of the oxide (e.g., display, lighting, and nano-biosensor). The technique is based on in situ and nonvolatile tuning of the sp(2) domain fraction to the sp(3) domain fraction (sp(2)/sp(3) fraction) in GO through an electrochemical redox reaction achieved by solid electrolyte thin films. The all-solid-state variable PL device was fabricated by GO and proton-conducting mesoporous SiO2 thin films, which showed an extremely low PL background. The device successfully tuned the PL peak wavelength in a very wide range from 393 to 712 nm, covering that for chemically tuned GO, by adjusting the applied DC voltage within several hundred seconds. We also demonstrate the sp(2)/sp(3) fraction tuning using a conductive atomic force microscope. The device achieved not only writing, but also erasing of the sp(2)/sp(3)-fraction-tuned nanodomain (both directions operation). The combination of these techniques is applicable to a wide range of nano-optoelectronic devices including nonvolatile PL memory devices and on-demand rewritable biosensors that can be integrated into nano- and microtips which are transparent, ultrathin, flexible, and inexpensive.

Effect of Thermomechanical Processing on the Microstructure, Properties, and Work Behavior of a Ti50.5 Ni29.5 Pt20 High-Temperature Shape Memory Alloy

NASA Technical Reports Server (NTRS)

Noebe, Ronald; Draper, Susan; Gaydosh, Darrell; Garga, Anita; Lerch, Brad; Penney, Nicholas; Begelow, Glen; Padula, Santo, II; Brown, Jeff

2006-01-01

TiNiPt shape memory alloys are particularly promising for use as solid state actuators in environments up to 300 C, due to a reasonable balance of properties, including acceptable work output. However, one of the challenges to commercializing a viable high-temperature shape memory alloy (HTSMA) is to establish the appropriate primary and secondary processing techniques for fabrication of the material in a required product form such as rod and wire. Consequently, a Ti(50.5)Ni(29.5)Pt20 alloy was processed using several techniques including single-pass high-temperature extrusion, multiple-pass high-temperature extrusion, and cold drawing to produce bar stock, thin rod, and fine wire, respectively. The effects of heat treatment on the hardness, grain size, room temperature tensile properties, and transformation temperatures of hot- and cold-worked material were examined. Basic tensile properties as a function of temperature and the strain-temperature response of the alloy under constant load, for the determination of work output, were also investigated for various forms of the Ti(50.5)Ni(29.5)Pt20 alloy, including fine wire.

Applications of Singh-Rajput Mes in Recall Operations of Quantum Associative Memory for a Two- Qubit System

NASA Astrophysics Data System (ADS)

Singh, Manu Pratap; Rajput, B. S.

2016-03-01

Recall operations of quantum associative memory (QuAM) have been conducted separately through evolutionary as well as non-evolutionary processes in terms of unitary and non- unitary operators respectively by separately choosing our recently derived maximally entangled states (Singh-Rajput MES) and Bell's MES as memory states for various queries and it has been shown that in each case the choices of Singh-Rajput MES as valid memory states are much more suitable than those of Bell's MES. it has been demonstrated that in both the types of recall processes the first and the fourth states of Singh-Rajput MES are most suitable choices as memory states for the queries `11' and `00' respectively while none of the Bell's MES is a suitable choice as valid memory state in these recall processes. It has been demonstrated that all the four states of Singh-Rajput MES are suitable choice as valid memory states for the queries `1?', `?1', `?0' and `0?' while none of the Bell's MES is suitable choice as the valid memory state for these queries also.

Julius Edgar Lilienfeld Prize Talk: Quantum spintronics: abandoning perfection for new technologies

NASA Astrophysics Data System (ADS)

Awschalom, David D.

2015-03-01

There is a growing interest in exploiting the quantum properties of electronic and nuclear spins for the manipulation and storage of information in the solid state. Such schemes offer qualitatively new scientific and technological opportunities by leveraging elements of standard electronics to precisely control coherent interactions between electrons, nuclei, and electromagnetic fields. We provide an overview of the field, including a discussion of temporally- and spatially-resolved magneto-optical measurements designed for probing local moment dynamics in electrically and magnetically doped semiconductor nanostructures. These early studies provided a surprising proof-of-concept that quantum spin states can be created and controlled with high-speed optoelectronic techniques. However, as electronic structures approach the atomic scale, small amounts of disorder begin to have outsized negative effects. An intriguing solution to this conundrum is emerging from recent efforts to embrace semiconductor defects themselves as a route towards quantum machines. Individual defects in carbon-based materials possess an electronic spin state that can be employed as a solid state quantum bit at and above room temperature. Developments at the frontier of this field include gigahertz coherent control, nanofabricated spin arrays, nuclear spin quantum memories, and nanometer-scale sensing. We will describe advances towards quantum information processing driven by both physics and materials science to explore electronic, photonic, and magnetic control of spin. Work supported by the AFOSR, ARO, DARPA, NSF, and ONR.

Investigation of the effects of solid lipid curcumin on cognition and mood in a healthy older population.

PubMed

Cox, Katherine H M; Pipingas, Andrew; Scholey, Andrew B

2015-05-01

Curcumin possesses many properties which may prevent or ameliorate pathological processes underlying age-related cognitive decline, dementia or mood disorders. These benefits in preclinical studies have not been established in humans. This randomized, double-blind, placebo-controlled trial examined the acute (1 and 3 h after a single dose), chronic (4 weeks) and acute-on-chronic (1 and 3 h after single dose following chronic treatment) effects of solid lipid curcumin formulation (400 mg as Longvida®) on cognitive function, mood and blood biomarkers in 60 healthy adults aged 60-85. One hour after administration curcumin significantly improved performance on sustained attention and working memory tasks, compared with placebo. Working memory and mood (general fatigue and change in state calmness, contentedness and fatigue induced by psychological stress) were significantly better following chronic treatment. A significant acute-on-chronic treatment effect on alertness and contentedness was also observed. Curcumin was associated with significantly reduced total and LDL cholesterol and had no effect on hematological safety measures. To our knowledge this is the first study to examine the effects of curcumin on cognition and mood in a healthy older population or to examine any acute behavioral effects in humans. Results highlight the need for further investigation of the potential psychological and cognitive benefits of curcumin in an older population. © The Author(s) 2014.

Electrical probing of field-driven cascading quantized transitions of skyrmion cluster states in MnSi nanowires

NASA Astrophysics Data System (ADS)

Du, Haifeng; Liang, Dong; Jin, Chiming; Kong, Lingyao; Stolt, Matthew J.; Ning, Wei; Yang, Jiyong; Xing, Ying; Wang, Jian; Che, Renchao; Zang, Jiadong; Jin, Song; Zhang, Yuheng; Tian, Mingliang

2015-07-01

Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future spintronic devices. To enable such applications, particular attention has been focused on the properties of skyrmions in highly confined geometries such as one-dimensional nanowires. Hitherto, it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here, we achieve this by measuring the magnetoresistance in ultra-narrow MnSi nanowires. We observe quantized jumps in magnetoresistance versus magnetic field curves. By tracking the size dependence of the jump number, we infer that skyrmions are assembled into cluster states with a tunable number of skyrmions, in agreement with the Monte Carlo simulations. Our results enable an electric reading of the number of skyrmions in the cluster states, thus laying a solid foundation to realize skyrmion-based memory devices.

Memristive and neuromorphic behavior in a LixCoO2 nanobattery

NASA Astrophysics Data System (ADS)

Mai, V. H.; Moradpour, A.; Senzier, P. Auban; Pasquier, C.; Wang, K.; Rozenberg, M. J.; Giapintzakis, J.; Mihailescu, C. N.; Orfanidou, C. M.; Svoukis, E.; Breza, A.; Lioutas, Ch B.; Franger, S.; Revcolevschi, A.; Maroutian, T.; Lecoeur, P.; Aubert, P.; Agnus, G.; Salot, R.; Albouy, P. A.; Weil, R.; Alamarguy, D.; March, K.; Jomard, F.; Chrétien, P.; Schneegans, O.

2015-01-01

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Post-manufacturing, 17-times acceptable raw bit error rate enhancement, dynamic codeword transition ECC scheme for highly reliable solid-state drives, SSDs

NASA Astrophysics Data System (ADS)

Tanakamaru, Shuhei; Fukuda, Mayumi; Higuchi, Kazuhide; Esumi, Atsushi; Ito, Mitsuyoshi; Li, Kai; Takeuchi, Ken

2011-04-01

A dynamic codeword transition ECC scheme is proposed for highly reliable solid-state drives, SSDs. By monitoring the error number or the write/erase cycles, the ECC codeword dynamically increases from 512 Byte (+parity) to 1 KByte, 2 KByte, 4 KByte…32 KByte. The proposed ECC with a larger codeword decreases the failure rate after ECC. As a result, the acceptable raw bit error rate, BER, before ECC is enhanced. Assuming a NAND Flash memory which requires 8-bit correction in 512 Byte codeword ECC, a 17-times higher acceptable raw BER than the conventional fixed 512 Byte codeword ECC is realized for the mobile phone application without an interleaving. For the MP3 player, digital-still camera and high-speed memory card applications with a dual channel interleaving, 15-times higher acceptable raw BER is achieved. Finally, for the SSD application with 8 channel interleaving, 13-times higher acceptable raw BER is realized. Because the ratio of the user data to the parity bits is the same in each ECC codeword, no additional memory area is required. Note that the reliability of SSD is improved after the manufacturing without cost penalty. Compared with the conventional ECC with the fixed large 32 KByte codeword, the proposed scheme achieves a lower power consumption by introducing the "best-effort" type operation. In the proposed scheme, during the most of the lifetime of SSD, a weak ECC with a shorter codeword such as 512 Byte (+parity), 1 KByte and 2 KByte is used and 98% lower power consumption is realized. At the life-end of SSD, a strong ECC with a 32 KByte codeword is used and the highly reliable operation is achieved. The random read performance is also discussed. The random read performance is estimated by the latency. The latency is below 1.5 ms for ECC codeword up to 32 KByte. This latency is below the average latency of 15,000 rpm HDD, 2 ms.

The NSLS 100 element solid state array detector

PubMed Central

Furenlid, L.R.; Kraner, H.W.; Rogers, L.C.; Cramer, S.P.; Stephani, D.; Beuttenmuller, R.H.; Beren, J.

2015-01-01

X-ray absorption studies of dilute samples require fluorescence detection techniques. Since signal-to-noise ratios are governed by the ratio of fluorescent to scattered photons counted by a detector, solid state detectors which can discriminate between fluorescence and scattered photons have become the instruments of choice for trace element measurements. Commercially available 13 element Ge array detectors permitting total count rates < 500000 counts per second are now in routine use. Since X-ray absorption beamlines at high brightness synchrotron sources can already illuminate most dilute samples with enough flux to saturate the current generation of solid state detectors, the development of next-generation instruments with significantly higher total count rates is essential. We present the design and current status of the 100 element Si array detector being developed in a collaboration between the NSLS and the Instrumentation Division at Brookhaven National Laboratory. The detecting array consists of a 10×10 matrix of 4 mm×4 mm elements laid out on a single piece of ultrahigh purity silicon mounted at the front end of a liquid nitrogen dewar assembly. A matrix of charge sensitive integrating preamplifiers feed signals to an array of shaping amplifiers, single channel analyzers, and scalers. An electronic switch, delay amplifier, linear gate, digital scope, peak sensing A/D converter, and histogramining memory module provide for complete diagnostics and channel calibration. The entire instrument is controlled by a LabView 2 application on a MacII ci; the software also provides full control over beamline hardware and performs the data collection. PMID:26722135

Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories.

PubMed

Younis, Adnan; Chu, Dewei; Shah, Abdul Hadi; Du, Haiwei; Li, Sean

2017-01-18

As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta 2 O 5 , SiO 2 , etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe 3 O 4 film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag + , while Cu prefers to oxidize into Cu 2+ first, followed by Cu/Cu + oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe 3 O 4 -based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.

High performance superconducting devices enabled by three dimensionally ordered nanodots and/or nanorods

DOEpatents

Goyal, Amit

2013-09-17

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Reversible non-volatile switch based on a TCNQ charge transfer complex

NASA Technical Reports Server (NTRS)

DiStefano, Salvador (Inventor); Moacanin, Jovan (Inventor); Nagasubramanian, Ganesan (Inventor)

1993-01-01

A solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.

High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods

DOEpatents

Goyal, Amit , Kang; Sukill, [Knoxville, TN

2012-02-21

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Lattice Vibrations Boost Demagnetization Entropy in Shape Memory Alloy

DOE PAGES

Stonaha, Paul J.; Manley, Michael E.; Bruno, Nick; ...

2015-10-07

Magnetocaloric (MC) materials present an avenue for chemical-free, solid state refrigeration through cooling via adiabatic demagnetization. We have used inelastic neutron scattering to measure the lattice dynamics in the MC material Ni 45Co 5Mn 36.6In 13.4. Upon heating across TC, the material exhibits an anomalous increase in phonon entropy of 0.17 0.04 k_B/atom, which is nine times larger than expected from conventional thermal expansion. We find that the phonon softening is focused in a transverse optic phonon, and we present the results of first-principle calculations which predict a strong coupling between lattice distortions and magnetic excitations.

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

NASA Technical Reports Server (NTRS)

Hoenk, M. E.; Carver, A. G.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.; Tsur, S.

2013-01-01

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

The utilization of parallel processing in solving the inviscid form of the average-passage equation system for multistage turbomachinery

NASA Technical Reports Server (NTRS)

Mulac, Richard A.; Celestina, Mark L.; Adamczyk, John J.; Misegades, Kent P.; Dawson, Jef M.

1987-01-01

A procedure is outlined which utilizes parallel processing to solve the inviscid form of the average-passage equation system for multistage turbomachinery along with a description of its implementation in a FORTRAN computer code, MSTAGE. A scheme to reduce the central memory requirements of the program is also detailed. Both the multitasking and I/O routines referred to in this paper are specific to the Cray X-MP line of computers and its associated SSD (Solid-state Storage Device). Results are presented for a simulation of a two-stage rocket engine fuel pump turbine.

High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods

DOEpatents

Goyal, Amit [Knoxville, TN

2011-10-11

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

Molecular controlled of quantum nano systems

NASA Astrophysics Data System (ADS)

Paltiel, Yossi

2014-03-01

A century ago quantum mechanics created a conceptual revolution whose fruits are now seen in almost any aspect of our day-to-day life. Lasers, transistors and other solid state and optical devices represent the core technology of current computers, memory devices and communication systems. However, all these examples do not exploit fully the quantum revolution as they do not take advantage of the coherent wave-like properties of the quantum wave function. Controlled coherent system and devices at ambient temperatures are challenging to realize. We are developing a novel nano tool box with control coupling between the quantum states and the environment. This tool box that combines nano particles with organic molecules enables the integration of quantum properties with classical existing devices at ambient temperatures. The nano particles generate the quantum states while the organic molecules control the coupling and therefore the energy, charge, spin, or quasi particle transfer between the layers. Coherent effects at ambient temperatures can be measured in the strong coupling regime. In the talk I will present our nano tool box and show studies of charge transfer, spin transfer and energy transfer in the hybrid layers as well as collective transfer phenomena. These enable the realization of room temperature operating quantum electro optical devices. For example I will present in details, our recent development of a new type of chiral molecules based magnetless universal memory exploiting selective spin transfer.

Modeling of thermo-mechanical fatigue and damage in shape memory alloy axial actuators

NASA Astrophysics Data System (ADS)

Wheeler, Robert W.; Hartl, Darren J.; Chemisky, Yves; Lagoudas, Dimitris C.

2015-04-01

The aerospace, automotive, and energy industries have seen the potential benefits of using shape memory alloys (SMAs) as solid state actuators. Thus far, however, these actuators are generally limited to non-critical components or over-designed due to a lack of understanding regarding how SMAs undergo thermomechanical or actuation fatigue and the inability to accurately predict failure in an actuator during use. The purpose of this study was to characterize the actuation fatigue response of Nickel-Titanium-Hafnium (NiTiHf) axial actuators and, in turn, use this characterization to predict failure and monitor damage in dogbone actuators undergoing various thermomechanical loading paths. Calibration data was collected from constant load, full cycle tests ranging from 200-600MPa. Subsequently, actuator lifetimes were predicted for four additional loading paths. These loading paths consisted of linearly varying load with full transformation (300-500MPa) and step loads which transition from zero stress to 300-400MPa at various martensitic volume fractions. Thermal cycling was achieved via resistive heating and convective cooling and was controlled via a state machine developed in LabVIEW. A previously developed fatigue damage model, which is formulated such that the damage accumulation rate is general in terms of its dependence on current and local stress and actuation strain states, was utilized. This form allows the model to be utilized for specimens undergoing complex loading paths. Agreement between experiments and simulations is discussed.

Hybrid quantum logic and a test of Bell's inequality using two different atomic isotopes.

PubMed

Ballance, C J; Schäfer, V M; Home, J P; Szwer, D J; Webster, S C; Allcock, D T C; Linke, N M; Harty, T P; Aude Craik, D P L; Stacey, D N; Steane, A M; Lucas, D M

2015-12-17

Entanglement is one of the most fundamental properties of quantum mechanics, and is the key resource for quantum information processing (QIP). Bipartite entangled states of identical particles have been generated and studied in several experiments, and post-selected or heralded entangled states involving pairs of photons, single photons and single atoms, or different nuclei in the solid state, have also been produced. Here we use a deterministic quantum logic gate to generate a 'hybrid' entangled state of two trapped-ion qubits held in different isotopes of calcium, perform full tomography of the state produced, and make a test of Bell's inequality with non-identical atoms. We use a laser-driven two-qubit gate, whose mechanism is insensitive to the qubits' energy splittings, to produce a maximally entangled state of one (40)Ca(+) qubit and one (43)Ca(+) qubit, held 3.5 micrometres apart in the same ion trap, with 99.8 ± 0.6 per cent fidelity. We test the CHSH (Clauser-Horne-Shimony-Holt) version of Bell's inequality for this novel entangled state and find that it is violated by 15 standard deviations; in this test, we close the detection loophole but not the locality loophole. Mixed-species quantum logic is a powerful technique for the construction of a quantum computer based on trapped ions, as it allows protection of memory qubits while other qubits undergo logic operations or are used as photonic interfaces to other processing units. The entangling gate mechanism used here can also be applied to qubits stored in different atomic elements; this would allow both memory and logic gate errors caused by photon scattering to be reduced below the levels required for fault-tolerant quantum error correction, which is an essential prerequisite for general-purpose quantum computing.

The role of state anxiety in children's memories for pain.

PubMed

Noel, Melanie; Chambers, Christine T; McGrath, Patrick J; Klein, Raymond M; Stewart, Sherry H

2012-06-01

To investigate the impact of experimentally manipulated state anxiety and the influence of anxiety-related variables on children's memories for pain. A total of 110 children (60 boys) between the ages of 8 and 12 years were randomly assigned to complete a state anxiety induction task or a control task. Following experimental manipulation, children completed a laboratory pain task, pain ratings, and questionnaire measures of anxiety-related variables. 2 weeks later, children provided pain ratings based on their memories of the pain task. The experimental manipulation effectively induced state anxiety; however, pain memories did not differ between groups. Irrespective of group assignment, children with higher state anxiety had more negative pain memories. State anxiety uniquely predicted children's pain memories over and above other well established factors. Anxiety sensitivity and trait anxiety were significant predictors of recalled pain-related fear. These data highlight the importance of anxiety in the development of children's memories for pain.

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Neurogenesis Interferes with the Retrieval of Remote Memories: Forgetting in Neurocomputational Terms

ERIC Educational Resources Information Center

Weisz, Victoria I.; Argibay, Pablo F.

2012-01-01

In contrast to models and theories that relate adult neurogenesis with the processes of learning and memory, almost no solid hypotheses have been formulated that involve a possible neurocomputational influence of adult neurogenesis on forgetting. Based on data from a previous study that implemented a simple but complete model of the main…

Interfacing broadband photonic qubits to on-chip cavity-protected rare-earth ensembles

PubMed Central

Zhong, Tian; Kindem, Jonathan M.; Rochman, Jake; Faraon, Andrei

2017-01-01

Ensembles of solid-state optical emitters enable broadband quantum storage and transduction of photonic qubits, with applications in high-rate quantum networks for secure communications and interconnecting future quantum computers. To transfer quantum states using ensembles, rephasing techniques are used to mitigate fast decoherence resulting from inhomogeneous broadening, but these techniques generally limit the bandwidth, efficiency and active times of the quantum interface. Here, we use a dense ensemble of neodymium rare-earth ions strongly coupled to a nanophotonic resonator to demonstrate a significant cavity protection effect at the single-photon level—a technique to suppress ensemble decoherence due to inhomogeneous broadening. The protected Rabi oscillations between the cavity field and the atomic super-radiant state enable ultra-fast transfer of photonic frequency qubits to the ions (∼50 GHz bandwidth) followed by retrieval with 98.7% fidelity. With the prospect of coupling to other long-lived rare-earth spin states, this technique opens the possibilities for broadband, always-ready quantum memories and fast optical-to-microwave transducers. PMID:28090078

Interfacing broadband photonic qubits to on-chip cavity-protected rare-earth ensembles

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan M.; Rochman, Jake; Faraon, Andrei

2017-01-01

Ensembles of solid-state optical emitters enable broadband quantum storage and transduction of photonic qubits, with applications in high-rate quantum networks for secure communications and interconnecting future quantum computers. To transfer quantum states using ensembles, rephasing techniques are used to mitigate fast decoherence resulting from inhomogeneous broadening, but these techniques generally limit the bandwidth, efficiency and active times of the quantum interface. Here, we use a dense ensemble of neodymium rare-earth ions strongly coupled to a nanophotonic resonator to demonstrate a significant cavity protection effect at the single-photon level--a technique to suppress ensemble decoherence due to inhomogeneous broadening. The protected Rabi oscillations between the cavity field and the atomic super-radiant state enable ultra-fast transfer of photonic frequency qubits to the ions (~50 GHz bandwidth) followed by retrieval with 98.7% fidelity. With the prospect of coupling to other long-lived rare-earth spin states, this technique opens the possibilities for broadband, always-ready quantum memories and fast optical-to-microwave transducers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braiman, Yehuda; Neschke, Brendan; Nair, Niketh S.

Here, we study memory states of a circuit consisting of a small inductively coupled Josephson junction array and introduce basic (write, read, and reset) memory operations logics of the circuit. The presented memory operation paradigm is fundamentally different from conventional single quantum flux operation logics. We calculate stability diagrams of the zero-voltage states and outline memory states of the circuit. We also calculate access times and access energies for basic memory operations.

Neutron imaging integrated circuit and method for detecting neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagarkar, Vivek V.; More, Mitali J.

The present disclosure provides a neutron imaging detector and a method for detecting neutrons. In one example, a method includes providing a neutron imaging detector including plurality of memory cells and a conversion layer on the memory cells, setting one or more of the memory cells to a first charge state, positioning the neutron imaging detector in a neutron environment for a predetermined time period, and reading a state change at one of the memory cells, and measuring a charge state change at one of the plurality of memory cells from the first charge state to a second charge statemore » less than the first charge state, where the charge state change indicates detection of neutrons at said one of the memory cells.« less

State orientation and memory load impair prospective memory performance in older compared to younger persons.

PubMed

Kaschel, Reiner; Kazén, Miguel; Kuhl, Julius

2017-07-01

A modified event-based paradigm of prospective memory was applied to investigate intention initiation in older and younger participants under high versus low memory load (subsequent episodic word recall vs. recognition). State versus action orientation, a personality dimension related to intention enactment, was also measured. State-oriented persons show a superiority effect for the storage of intentions in an explicit format but have a paradoxical deficit in their actual enactment. We predicted an interaction between aging, personality, and memory load, with longer intention-initiation latencies and higher omission rates for older state-oriented participants under high memory load. Results were consistent with predictions and are interpreted according to current personality and prospective memory models of aging.

Material platforms for spin-based photonic quantum technologies

NASA Astrophysics Data System (ADS)

Atatüre, Mete; Englund, Dirk; Vamivakas, Nick; Lee, Sang-Yun; Wrachtrup, Joerg

2018-05-01

A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light-matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light-matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light-matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors.

Examining factors involved in stress-related working memory impairments: Independent or conditional effects?

PubMed

Banks, Jonathan B; Tartar, Jaime L; Tamayo, Brittney A

2015-12-01

A large and growing body of research demonstrates the impact of psychological stress on working memory. However, the typical study approach tests the effects of a single biological or psychological factor on changes in working memory. The current study attempted to move beyond the standard single-factor assessment by examining the impact of 2 possible factors in stress-related working memory impairments. To this end, 60 participants completed a working memory task before and after either a psychological stressor writing task or a control writing task and completed measures of both cortisol and mind wandering. We also included a measure of state anxiety to examine the direct and indirect effect on working memory. We found that mind wandering mediated the relationship between state anxiety and working memory at the baseline measurement. This indirect relationship was moderated by cortisol, such that the impact of mind wandering on working memory increased as cortisol levels increased. No overall working memory impairment was observed following the stress manipulation, but increases in state anxiety and mind wandering were observed. State anxiety and mind wandering independently mediated the relationship between change in working memory and threat perception. The indirect paths resulted in opposing effects on working memory. Combined, the findings from this study suggest that cortisol enhances the impact of mind wandering on working memory, that state anxiety may not always result in stress-related working memory impairments, and that high working memory performance can protect against mind wandering. (c) 2015 APA, all rights reserved).

The Case of the Missing Visual Details: Occlusion and Long-Term Visual Memory

ERIC Educational Resources Information Center

Williams, Carrick C.; Burkle, Kyle A.

2017-01-01

To investigate the critical information in long-term visual memory representations of objects, we used occlusion to emphasize 1 type of information or another. By occluding 1 solid side of the object (e.g., top 50%) or by occluding 50% of the object with stripes (like a picket fence), we emphasized visible information about the object, processing…

Atomic Source of Single Photons in the Telecom Band

NASA Astrophysics Data System (ADS)

Dibos, A. M.; Raha, M.; Phenicie, C. M.; Thompson, J. D.

2018-06-01

Single atoms and atomlike defects in solids are ideal quantum light sources and memories for quantum networks. However, most atomic transitions are in the ultraviolet-visible portion of the electromagnetic spectrum, where propagation losses in optical fibers are prohibitively large. Here, we observe for the first time the emission of single photons from a single Er3 + ion in a solid-state host, whose optical transition at 1.5 μ m is in the telecom band, allowing for low-loss propagation in optical fiber. This is enabled by integrating Er3 + ions with silicon nanophotonic structures, which results in an enhancement of the photon emission rate by a factor of more than 650. Dozens of distinct ions can be addressed in a single device, and the splitting of the lines in a magnetic field confirms that the optical transitions are coupled to the electronic spin of the Er3 + ions. These results are a significant step towards long-distance quantum networks and deterministic quantum logic for photons based on a scalable silicon nanophotonics architecture.

Magellan spacecraft and memory state tracking: Lessons learned, future thoughts

NASA Technical Reports Server (NTRS)

Bucher, Allen W.

1993-01-01

Numerous studies have been dedicated to improving the two main elements of Spacecraft Mission Operations: Command and Telemetry. As a result, not much attention has been given to other tasks that can become tedious, repetitive, and error prone. One such task is Spacecraft and Memory State Tracking, the process by which the status of critical spacecraft components, parameters, and the contents of on-board memory are managed on the ground to maintain knowledge of spacecraft and memory states for future testing, anomaly investigation, and on-board memory reconstruction. The task of Spacecraft and Memory State Tracking has traditionally been a manual task allocated to Mission Operations Procedures. During nominal Mission Operations this job is tedious and error prone. Because the task is not complex and can be accomplished manually, the worth of a sophisticated software tool is often questioned. However, in the event of an anomaly which alters spacecraft components autonomously or a memory anomaly such as a corrupt memory or flight software error, an accurate ground image that can be reconstructed quickly is a priceless commodity. This study explores the process of Spacecraft and Memory State Tracking used by the Magellan Spacecraft Team highlighting its strengths as well as identifying lessons learned during the primary and extended missions, two memory anomalies, and other hardships encountered due to incomplete knowledge of spacecraft states. Ideas for future state tracking tools that require minimal user interaction and are integrated into the Ground Data System will also be discussed.

Magellan spacecraft and memory state tracking: Lessons learned, future thoughts

NASA Astrophysics Data System (ADS)

Bucher, Allen W.

1993-03-01

Numerous studies have been dedicated to improving the two main elements of Spacecraft Mission Operations: Command and Telemetry. As a result, not much attention has been given to other tasks that can become tedious, repetitive, and error prone. One such task is Spacecraft and Memory State Tracking, the process by which the status of critical spacecraft components, parameters, and the contents of on-board memory are managed on the ground to maintain knowledge of spacecraft and memory states for future testing, anomaly investigation, and on-board memory reconstruction. The task of Spacecraft and Memory State Tracking has traditionally been a manual task allocated to Mission Operations Procedures. During nominal Mission Operations this job is tedious and error prone. Because the task is not complex and can be accomplished manually, the worth of a sophisticated software tool is often questioned. However, in the event of an anomaly which alters spacecraft components autonomously or a memory anomaly such as a corrupt memory or flight software error, an accurate ground image that can be reconstructed quickly is a priceless commodity. This study explores the process of Spacecraft and Memory State Tracking used by the Magellan Spacecraft Team highlighting its strengths as well as identifying lessons learned during the primary and extended missions, two memory anomalies, and other hardships encountered due to incomplete knowledge of spacecraft states. Ideas for future state tracking tools that require minimal user interaction and are integrated into the Ground Data System will also be discussed.

Porous inorganic-organic shape memory polymers.

PubMed

Zhang, Dawei; Burkes, William L; Schoener, Cody A; Grunlan, Melissa A

2012-06-21

Thermoresponsive shape memory polymers (SMPs) are a type of stimuli-sensitive materials that switch from a temporary shape back to their permanent shape upon exposure to heat. While the majority of SMPs have been fabricated in the solid form, porous SMP foams exhibit distinct properties and are better suited for certain applications, including some in the biomedical field. Like solid SMPs, SMP foams have been restricted to a limited group of organic polymer systems. In this study, we prepared inorganic-organic SMP foams based on the photochemical cure of a macromer comprised of inorganic polydimethylsiloxane (PDMS) segments and organic poly(ε-caprolactone) (PCL) segments, diacrylated PCL(40)-block-PDMS(37)-block-PCL(40). To achieve tunable pore size with high interconnectivity, the SMP foams were prepared via a refined solvent-casting/particulate-leaching (SCPL) method. By varying design parameters such as degree of salt fusion, macromer concentration in the solvent and salt particle size, the SMP foams with excellent shape memory behavior and tunable pore size, pore morphology, and modulus were obtained.

A cog in cognition: how the alpha 7 nicotinic acetylcholine receptor is geared towards improving cognitive deficits.

PubMed

Leiser, Steven C; Bowlby, Mark R; Comery, Thomas A; Dunlop, John

2009-06-01

Cognition, memory, and attention and arousal have been linked to nicotinic acetylcholine receptors (nAChRs). Thus it is not surprising that nAChRs have been strongly implicated as therapeutic targets for treating cognitive deficits in disorders such as schizophrenia and Alzheimer's disease (AD). In particular the alpha7 (alpha7) nAChR has been closely linked with normalization of P50 auditory evoked potential (AEP) gating deficits, and to a lesser extent improvements in pre-pulse inhibition (PPI) of the acoustic startle response. These two brain phenomena can be considered as pre-attentive, occurring while sensory information is being processed, and are important endophenotypes in schizophrenia with deficits likely contributing to the cognitive fragmentation associated with the disease. In addition alpha7 nAChRs have been implicated in attention, in particular under high attentional demand, and in more demanding working memory tasks such as long delays in delayed matching tasks. Efficacy of alpha7 nAChR agonists across a range of cognitive processes ranging from pre-attentive to attentive states and working and recognition memory provides a solid basis for their pro-cognitive effects. This review will focus on the recent work highlighting the role of alpha7 in cognition and cognitive processes.

NAS technical summaries: Numerical aerodynamic simulation program, March 1991 - February 1992

NASA Technical Reports Server (NTRS)

1992-01-01

NASA created the Numerical Aerodynamic Simulation (NAS) Program in 1987 to focus resources on solving critical problems in aeroscience and related disciplines by utilizing the power of the most advanced supercomputers available. The NAS Program provides scientists with the necessary computing power to solve today's most demanding computational fluid dynamics problems and serves as a pathfinder in integrating leading-edge supercomputing technologies, thus benefiting other supercomputer centers in Government and industry. This report contains selected scientific results from the 1991-92 NAS Operational Year, March 4, 1991 to March 3, 1992, which is the fifth year of operation. During this year, the scientific community was given access to a Cray-2 and a Cray Y-MP. The Cray-2, the first generation supercomputer, has four processors, 256 megawords of central memory, and a total sustained speed of 250 million floating point operations per second. The Cray Y-MP, the second generation supercomputer, has eight processors and a total sustained speed of one billion floating point operations per second. Additional memory was installed this year, doubling capacity from 128 to 256 megawords of solid-state storage-device memory. Because of its higher performance, the Cray Y-MP delivered approximately 77 percent of the total number of supercomputer hours used during this year.

Technical Operations Support III (TOPS III). Task Order 0018: Nanostructured Graphene-Like Polymers

DTIC Science & Technology

2010-06-01

diverse response by a large class of materials: viscoelastic fluids, inelasticity, crystallization of polymers, twinning, shape memory alloys , single...crystal super alloys , and viscoelastic solids. 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT: SAR 18. NUMBER...twinning (Rajagopal and Srinivasa (1997)), Kannan et al. (2002)), shape memory alloys (Rajagopal and Srinivasa (1999)), single crystal super alloys

Large efficiency at telecom wavelength for optical quantum memories.

PubMed

Dajczgewand, Julián; Le Gouët, Jean-Louis; Louchet-Chauvet, Anne; Chanelière, Thierry

2014-05-01

We implement the ROSE protocol in an erbium-doped solid, compatible with the telecom range. The ROSE scheme is an adaptation of the standard two-pulse photon echo to make it suitable for a quantum memory. We observe a retrieval efficiency of 40% for a weak laser pulse in the forward direction by using specific orientations of the light polarizations, magnetic field, and crystal axes.

Solid state engine with alternating motion

DOEpatents

Golestaneh, Ahmad A.

1982-01-01

Heat energy is converted to mechanical motion utilizing apparatus including a cylinder, a piston having openings therein reciprocable in the cylinder, inlet and outlet ports for warm water at one end of the cylinder, inlet and outlet ports for cool water at the other end of the cylinder, gates movable with the piston and slidably engaging the cylinder wall to alternately open and close the warm and cool water ports, a spring bearing against the warm water side of the piston and a double helix of a thermal shape memory material attached to the cool end of the cylinder and to the piston. The piston is caused to reciprocate by alternately admitting cool water and warm water to the cylinder.

Solid state engine with alternating motion

DOEpatents

Golestaneh, A.A.

1980-01-21

Heat energy is converted to mechanical motion utilizing apparatus including a cylinder, a piston having openings therein reciprocable in the cylinder, inlet and outlet ports for warm water at one end of the cylinder, inlet and outlet ports for cool water at the other end of the cylinder, gates movable with the piston and slidably engaging the cylinder wall to alternately open and close the warm and cool water ports, a spring bearing against the warm water side of the piston and a double helix of a thermal shape memory material attached to the cool end of the cylinder and to the piston. The piston is caused to reciprocate by alternately admitting cool water and warm water to the cylinder.

Lattice vibrations boost demagnetization entropy in a shape-memory alloy

NASA Astrophysics Data System (ADS)

Stonaha, P. J.; Manley, M. E.; Bruno, N. M.; Karaman, I.; Arroyave, R.; Singh, N.; Abernathy, D. L.; Chi, S.

2015-10-01

Magnetocaloric (MC) materials present an avenue for chemical-free, solid-state refrigeration through cooling via adiabatic demagnetization. We have used inelastic neutron scattering to measure the lattice dynamics in the MC material N i45C o5M n36.6I n13.4 . Upon heating across the Curie temperature (TC) , the material exhibits an anomalous increase in phonon entropy of 0.22 ±0.04 kB/atom , which is ten times larger than expected from conventional thermal expansion. This transition is accompanied by an abrupt softening of the transverse optic phonon. We present first-principles calculations showing a strong coupling between lattice distortions and magnetic excitations.

Detection and analysis of radio frequency lightning emissions

NASA Technical Reports Server (NTRS)

Jalali, F.

1982-01-01

The feasibility study of detection of lightning discharges from a geosynchronous satellite requires adequate ground-based information regarding emission characteristics. In this investigation, a measurement system for collection of S-band emission data is set up and calibrated, and the operations procedures for rapid data collection during a storm activity developed. The system collects emission data in two modes; a digitized, high-resolution, short duration record stored in solid-state memory, and a continuous long-duration record on magnetic tape. Representative lightning flash data are shown. Preliminary results indicate appreciable RF emissions at 2 gHz from both the leader and return strokes portions of the cloud-to-ground discharge with strong peaks associated with the return strokes.

Thermokinetic Simulation of Precipitation in NiTi Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Cirstea, C. D.; Karadeniz-Povoden, E.; Kozeschnik, E.; Lungu, M.; Lang, P.; Balagurov, A.; Cirstea, V.

2017-06-01

Considering classical nucleation theory and evolution equations for the growth and composition change of precipitates, we simulate the evolution of the precipitates structure in the classical stages of nucleation, growth and coarsening using the solid-state transformation Matcalc software. The formation of Ni3Ti, Ni4Ti3 or Ni3Ti2 precipitate is the key to hardening phenomenon of the alloys, which depends on the nickel solubility in the bulk alloys. The microstructural evolution of metastable Ni4Ti3 and Ni3Ti2 precipitates in Ni-rich TiNi alloys is simulated by computational thermokinetics, based on thermodynamic and diffusion databases. The simulated precipitate phase fractions are compared with experimental data.

Emerging applications of spark plasma sintering in all solid-state lithium-ion batteries and beyond

NASA Astrophysics Data System (ADS)

Zhu, Hongzheng; Liu, Jian

2018-07-01

Solid-state batteries have received increasing attention due to their high safety aspect and high energy and power densities. However, the development of solid-state batteries is hindered by inferior solid-solid interfaces between the solid-state electrolyte and electrode, which cause high interfacial resistance, reduced Li-ion and electron transfer rate, and limited battery performance. Recently, spark plasma sintering (SPS) is emerging as a promising technique for fabricating solid-state electrolyte and electrode pellets with clean and intimate solid-solid interfaces. During the SPS process, the unique reaction mechanism through the combination of current, pressure and high heating rate allow the formation of desirable solid-solid interfaces between active material particles. Herein, this work focuses on the overview of the application of SPS for fabricating solid-state electrolyte and electrode in all solid-state Li-ion batteries, and beyond, such as solid-state Li-S and Na-ion batteries. The correlations among SPS parameters, interfacial resistance, and electrochemical properties of solid-state electrolytes and electrodes are discussed for different material systems. In the end, we point out future opportunities and challenges associated with SPS application in the hot area of solid-state batteries. It is expected that this timely review will stimulate more fundamental and applied research in the development of solid-state batteries by SPS.

Magnetic antiskyrmions above room temperature in tetragonal Heusler materials

NASA Astrophysics Data System (ADS)

Nayak, Ajaya K.; Kumar, Vivek; Ma, Tianping; Werner, Peter; Pippel, Eckhard; Sahoo, Roshnee; Damay, Franoise; Rößler, Ulrich K.; Felser, Claudia; Parkin, Stuart S. P.

2017-08-01

Magnetic skyrmions are topologically stable, vortex-like objects surrounded by chiral boundaries that separate a region of reversed magnetization from the surrounding magnetized material. They are closely related to nanoscopic chiral magnetic domain walls, which could be used as memory and logic elements for conventional and neuromorphic computing applications that go beyond Moore’s law. Of particular interest is ‘racetrack memory’, which is composed of vertical magnetic nanowires, each accommodating of the order of 100 domain walls, and that shows promise as a solid state, non-volatile memory with exceptional capacity and performance. Its performance is derived from the very high speeds (up to one kilometre per second) at which chiral domain walls can be moved with nanosecond current pulses in synthetic antiferromagnet racetracks. Because skyrmions are essentially composed of a pair of chiral domain walls closed in on themselves, but are, in principle, more stable to perturbations than the component domain walls themselves, they are attractive for use in spintronic applications, notably racetrack memory. Stabilization of skyrmions has generally been achieved in systems with broken inversion symmetry, in which the asymmetric Dzyaloshinskii-Moriya interaction modifies the uniform magnetic state to a swirling state. Depending on the crystal symmetry, two distinct types of skyrmions have been observed experimentally, namely, Bloch and Néel skyrmions. Here we present the experimental manifestation of another type of skyrmion—the magnetic antiskyrmion—in acentric tetragonal Heusler compounds with D2d crystal symmetry. Antiskyrmions are characterized by boundary walls that have alternating Bloch and Néel type as one traces around the boundary. A spiral magnetic ground-state, which propagates in the tetragonal basal plane, is transformed into an antiskyrmion lattice state under magnetic fields applied along the tetragonal axis over a wide range of temperatures. Direct imaging by Lorentz transmission electron microscopy shows field-stabilized antiskyrmion lattices and isolated antiskyrmions from 100 kelvin to well beyond room temperature, and zero-field metastable antiskyrmions at low temperatures. These results enlarge the family of magnetic skyrmions and pave the way to the engineering of complex bespoke designed skyrmionic structures.

Progress and prospect on failure mechanisms of solid-state lithium batteries

NASA Astrophysics Data System (ADS)

Ma, Jun; Chen, Bingbing; Wang, Longlong; Cui, Guanglei

2018-07-01

By replacing traditional liquid organic electrolyte with solid-state electrolyte, the solid-state lithium batteries powerfully come back to the energy storage field due to their eminent safety and energy density. In recent years, a variety of solid-state lithium batteries based on excellent solid-state electrolytes are developed. However, the performance degradation of solid-state lithium batteries during cycling and storing is still a serious challenge for practical application. Therefore, this review summarizes the research progress of solid-state lithium batteries from the perspectives of failure phenomena and failure mechanisms. Additionally, the development of methodologies on studying the failure mechanisms of solid-state lithium batteries is also reviewed. Moreover, some perspectives on the remaining questions for understanding the failure behaviors and achieving long cycle life, high safety and high energy density solid-state lithium batteries are presented. This review will help researchers to recognize the status of solid-state lithium batteries objectively and attract much more research interest in conquering the failure issues of solid-state lithium batteries.

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...control circuitry for control of electron/ nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and...coherence time of the qubit/ memory , we present as an example the integration of cryogenic superconductor components, including filters and

A review of shape memory material’s applications in the offshore oil and gas industry

NASA Astrophysics Data System (ADS)

Patil, Devendra; Song, Gangbing

2017-09-01

The continuously increasing demand for oil and gas and the depleting number of new large reservoir discoveries have made it necessary for the oil and gas industry to investigate and design new, improved technologies that unlock new sources of energy and squeeze more from existing resources. Shape memory materials (SMM), with their remarkable properties such as the shape memory effect (SME), corrosion resistance, and superelasticity have shown great potential to meet these demands by significantly improving the functionality and durability of offshore systems. Shape memory alloy (SMA) and shape memory polymer (SMP) are two types of most commonly used SMM’s and are ideally suited for use over a range of robust engineering applications found within the oil and gas industry, such as deepwater actuators, valves, underwater connectors, seals, self-torqueing fasteners and sand management. The potential high strain and high force output of the SME of SMA can be harnessed to create a lightweight, solid state alternative to conventional hydraulic, pneumatic or motor based actuator systems. The phase transformation property enables the SMA to withstand erosive stresses, which is useful for minimizing the effect of erosion often experienced by downhole devices. The superelasticity of the SMA provides good energy dissipation, and can overcome the various defects and limitations suffered by conventional passive damping methods. The higher strain recovery during SME makes SMP ideal for developments of packers and sand management in downhole. The increasing number of SMM related research papers and patents from oil and gas industry indicate the growing research interest of the industry to implement SMM in offshore applications. This paper reviews the recent developments and applications of SMM in the offshore oil and gas industry.

Solid oxide fuel cells fueled with reducible oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chuang, Steven S.; Fan, Liang Shih

A direct-electrochemical-oxidation fuel cell for generating electrical energy includes a cathode provided with an electrochemical-reduction catalyst that promotes formation of oxygen ions from an oxygen-containing source at the cathode, a solid-state reduced metal, a solid-state anode provided with an electrochemical-oxidation catalyst that promotes direct electrochemical oxidation of the solid-state reduced metal in the presence of the oxygen ions to produce electrical energy, and an electrolyte disposed to transmit the oxygen ions from the cathode to the solid-state anode. A method of operating a solid oxide fuel cell includes providing a direct-electrochemical-oxidation fuel cell comprising a solid-state reduced metal, oxidizing themore » solid-state reduced metal in the presence of oxygen ions through direct-electrochemical-oxidation to obtain a solid-state reducible metal oxide, and reducing the solid-state reducible metal oxide to obtain the solid-state reduced metal.« less

Study of magnetic behavior in hexagonal-YMn1-xFexO3 (x=0 and 0.2) nanoparticles using remanent magnetization curves

NASA Astrophysics Data System (ADS)

Chauhan, Samta; Singh, Amit Kumar; Srivastava, Saurabh Kumar; Chandra, Ramesh

2016-09-01

We have studied the magnetic behavior of YMn1-xFexO3 (x=0 and 0.2) nanoparticles synthesized by conventional solid state reaction method. The as-synthesized nanoparticles were found to have hexagonal phase with P63cm space group confirmed by X-Ray diffraction. The particle size was found to be ~70 nm as confirmed by both X-Ray diffraction and Transmission Electron Microscopy. DC magnetization and memory effect measurements imply that the h-YMnO3 nanoparticles bear a resemblance to super spin-glass state following de Almeida-Thouless like behavior which is being suppressed by Fe-doping. The Fe-doping in YMnO3 enhances the antiferromagnetic (AFM) transition temperature TN to ~79 K and induces a new magnetic state due to the surface spins which is realized as diluted antiferromagnet in a field (DAFF) as explored by the thermoremanent and isothermoremanent magnetization measured with different applied magnetic field.

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and superconductor-ionic hybrid technologies. As the...pulse quality and need for development of single pulses with very high quality will impact directly the coherence time of the qubit/ memory , we present

Field-Controlled Electrical Switch with Liquid Metal.

PubMed

Wissman, James; Dickey, Michael D; Majidi, Carmel

2017-12-01

When immersed in an electrolyte, droplets of Ga-based liquid metal (LM) alloy can be manipulated in ways not possible with conventional electrocapillarity or electrowetting. This study demonstrates how LM electrochemistry can be exploited to coalesce and separate droplets under moderate voltages of ~1-10 V. This novel approach to droplet interaction can be explained with a theory that accounts for oxidation and reduction as well as fluidic instabilities. Based on simulations and experimental analysis, this study finds that droplet separation is governed by a unique limit-point instability that arises from gradients in bipolar electrochemical reactions that lead to gradients in interfacial tension. The LM coalescence and separation are used to create a field-programmable electrical switch. As with conventional relays or flip-flop latch circuits, the system can transition between bistable (separated or coalesced) states, making it useful for memory storage, logic, and shape-programmable circuitry using entirely liquids instead of solid-state materials.

Molar loss and powder diet leads to memory deficit and modifies the mRNA expression of brain-derived neurotrophic factor in the hippocampus of adult mice.

PubMed

Takeda, Yosuke; Oue, Hiroshi; Okada, Shinsuke; Kawano, Akira; Koretake, Katsunori; Michikawa, Makoto; Akagawa, Yasumasa; Tsuga, Kazuhiro

2016-12-05

It is known that tooth loss is known to be a risk factor for Alzheimer's disease and soft diet feeding induces memory impairment. Recent studies have shown that brain-derived neurotrophic factor (BDNF) is associated with tooth loss or soft diet in young animal model, and that BDNF expression is decreased in patients with Alzheimer's disease. However, single or combined effect of tooth loss and/or soft diet on brain function has not fully understood. Here we examined the effect of molar loss and powder diet on memory ability and the expression of BDNF mRNA in the hippocampus of adult C57BL/6J mice. Twenty eight-weeks-old C57BL/6J mice were divided into intact molar group and extracted molar group. They were randomly divided into the I/S group (Intact upper molar teeth/Solid diet feeding), the E/S group (Extracted upper molar teeth/Solid diet feeding), the I/P group (Intact upper molar teeth/Powder diet feeding), and the E/P group (Extracted upper molar teeth/Powder diet feeding). The observation periods were 4 and 16-week. To analyze the memory ability, the step-through passive avoidance test was conducted. BDNF-related mRNA in the hippocampus was analyzed by real-time polymerase chain reaction (RT-PCR). At 4 weeks later, we performed memory test and isolated brains to analyze. There were no differences in memory function and BDNF mRNA level between these four groups. However, at 16 weeks later, E/S and E/P group showed memory impairment, and decreased level of BDNF mRNA. Whereas, the powder diet had no effect on memory function and BDNF mRNA level even at 16 weeks later. These results suggest that the effect of molar loss and powder diet on memory function and BDNF mRNA levels were different, molar loss may have a greater long-term effect on memory ability than powder diet does.

75 FR 52023 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-24

... DEPARTMENT OF THE INTERIOR National Park Service Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of Washington, Seattle, WA AGENCY: National Park Service... of the Thomas Burke Memorial Washington State Museum (Burke Museum), University of Washington...

Reconsolidation May Incorporate State-Dependency into Previously Consolidated Memories

ERIC Educational Resources Information Center

Sierra, Rodrigo O.; Cassini, Lindsey F.; Santana, Fabiana; Crestani, Ana P.; Duran, Johanna M.; Haubrich, Josue; de Oliveira Alvares, Lucas; Quillfeldt, Jorge A.

2013-01-01

Some memories enter into a labile state after retrieval, requiring reconsolidation in order to persist. One functional role of memory reconsolidation is the updating of existing memories. There are reports suggesting that reconsolidation can be modulated by a particular endogenous process taking place concomitantly to its natural course, such as…

78 FR 55095 - Certain Flash Memory Chips and Products Containing Same; Institution of Investigation

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-09

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-893] Certain Flash Memory Chips and... States after importation of certain flash memory chips and products containing the same by reason of... sale within the United States after importation of certain flash memory chips and products containing...

A Heterogeneous Multiprocessor Graphics System Using Processor-Enhanced Memories

DTIC Science & Technology

1989-02-01

frames per second, font generation directly from conic spline descriptions, and rapid calculation of radiosity form factors. The hardware consists of...generality for rendering curved surfaces, volume data, objects dcscri id with Constructive Solid Geometry, for rendering scenes using the radiosity ...f.aces and for computing a spherical radiosity lighting model (see Section 7.6). Custom Memory Chips \\ 208 bits x 128 pixels - Renderer Board ix p o a

Computational Thermodynamics and Kinetics-Based ICME Framework for High-Temperature Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Arróyave, Raymundo; Talapatra, Anjana; Johnson, Luke; Singh, Navdeep; Ma, Ji; Karaman, Ibrahim

2015-11-01

Over the last decade, considerable interest in the development of High-Temperature Shape Memory Alloys (HTSMAs) for solid-state actuation has increased dramatically as key applications in the aerospace and automotive industry demand actuation temperatures well above those of conventional SMAs. Most of the research to date has focused on establishing the (forward) connections between chemistry, processing, (micro)structure, properties, and performance. Much less work has been dedicated to the development of frameworks capable of addressing the inverse problem of establishing necessary chemistry and processing schedules to achieve specific performance goals. Integrated Computational Materials Engineering (ICME) has emerged as a powerful framework to address this problem, although it has yet to be applied to the development of HTSMAs. In this paper, the contributions of computational thermodynamics and kinetics to ICME of HTSMAs are described. Some representative examples of the use of computational thermodynamics and kinetics to understand the phase stability and microstructural evolution in HTSMAs are discussed. Some very recent efforts at combining both to assist in the design of HTSMAs and limitations to the full implementation of ICME frameworks for HTSMA development are presented.

Optically programmable electron spin memory using semiconductor quantum dots.

PubMed

Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

2004-11-04

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

75 FR 36672 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-28

... made by the Burke Museum professional staff in consultation with representatives of the Lummi Tribe of... Memorial Washington State Museum, University of Washington, Seattle, WA AGENCY: National Park Service... of the Thomas Burke Memorial Washington State Museum (Burke Museum), University of Washington...

78 FR 45958 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-07-30

... associated funerary objects was made by the Burke Museum professional staff in consultation with....R50000] Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of... Memorial Washington State Museum, University of Washington (Burke Museum), has completed an inventory of...

Memory for light as a quantum process.

PubMed

Lobino, M; Kupchak, C; Figueroa, E; Lvovsky, A I

2009-05-22

We report complete characterization of an optical memory based on electromagnetically induced transparency. We recover the superoperator associated with the memory, under two different working conditions, by means of a quantum process tomography technique that involves storage of coherent states and their characterization upon retrieval. In this way, we can predict the quantum state retrieved from the memory for any input, for example, the squeezed vacuum or the Fock state. We employ the acquired superoperator to verify the nonclassicality benchmark for the storage of a Gaussian distributed set of coherent states.

Surface dose measurements with commonly used detectors: a consistent thickness correction method.

PubMed

Reynolds, Tatsiana A; Higgins, Patrick

2015-09-08

The purpose of this study was to review application of a consistent correction method for the solid state detectors, such as thermoluminescent dosimeters (chips (cTLD) and powder (pTLD)), optically stimulated detectors (both closed (OSL) and open (eOSL)), and radiochromic (EBT2) and radiographic (EDR2) films. In addition, to compare measured surface dose using an extrapolation ionization chamber (PTW 30-360) with other parallel plate chambers RMI-449 (Attix), Capintec PS-033, PTW 30-329 (Markus) and Memorial. Measurements of surface dose for 6MV photons with parallel plate chambers were used to establish a baseline. cTLD, OSLs, EDR2, and EBT2 measurements were corrected using a method which involved irradiation of three dosimeter stacks, followed by linear extrapolation of individual dosimeter measurements to zero thickness. We determined the magnitude of correction for each detector and compared our results against an alternative correction method based on effective thickness. All uncorrected surface dose measurements exhibited overresponse, compared with the extrapolation chamber data, except for the Attix chamber. The closest match was obtained with the Attix chamber (-0.1%), followed by pTLD (0.5%), Capintec (4.5%), Memorial (7.3%), Markus (10%), cTLD (11.8%), eOSL (12.8%), EBT2 (14%), EDR2 (14.8%), and OSL (26%). Application of published ionization chamber corrections brought all the parallel plate results to within 1% of the extrapolation chamber. The extrapolation method corrected all solid-state detector results to within 2% of baseline, except the OSLs. Extrapolation of dose using a simple three-detector stack has been demonstrated to provide thickness corrections for cTLD, eOSLs, EBT2, and EDR2 which can then be used for surface dose measurements. Standard OSLs are not recommended for surface dose measurement. The effective thickness method suffers from the subjectivity inherent in the inclusion of measured percentage depth-dose curves and is not recommended for these types of measurements.

All-optical coherent population trapping with defect spin ensembles in silicon carbide.

PubMed

Zwier, Olger V; O'Shea, Danny; Onur, Alexander R; van der Wal, Caspar H

2015-06-05

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.

Unconditional room-temperature quantum memory

NASA Astrophysics Data System (ADS)

Hosseini, M.; Campbell, G.; Sparkes, B. M.; Lam, P. K.; Buchler, B. C.

2011-10-01

Just as classical information systems require buffers and memory, the same is true for quantum information systems. The potential that optical quantum information processing holds for revolutionizing computation and communication is therefore driving significant research into developing optical quantum memory. A practical optical quantum memory must be able to store and recall quantum states on demand with high efficiency and low noise. Ideally, the platform for the memory would also be simple and inexpensive. Here, we present a complete tomographic reconstruction of quantum states that have been stored in the ground states of rubidium in a vapour cell operating at around 80°C. Without conditional measurements, we show recall fidelity up to 98% for coherent pulses containing around one photon. To unambiguously verify that our memory beats the quantum no-cloning limit we employ state-independent verification using conditional variance and signal-transfer coefficients.

New Maximally Entangled States for Pattern-Association Through Evolutionary Processes in a Two-Qubit System

NASA Astrophysics Data System (ADS)

Singh, Manu Pratap; Rajput, Balwant S.

2017-04-01

New set of maximally entangled states (Singh-Rajput MES), constituting orthonormal eigen bases, has been revisited and its superiority and suitability in pattern-association (Quantum Associative Memory, QuAM) have been demonstrated. Using these MES as memory states in the evolutionary process of pattern storage in a two-qubit system, it has been shown that the first two states of Singh-Rajput MES are useful for storing the pattern |11> and the last two of these MES are useful in storing the pattern |10> Recall operations of quantum associate memory (QuAM) have been conducted through evolutionary process in terms of unitary operators by separately choosing Singh-Rajput MES and Bell's MES as memory states and it has been shown that Singh-Rajput MES as valid memory states for recalling the patterns in a two-qubit system are much more suitable than Bell's MES.

Parameter optimization for transitions between memory states in small arrays of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rezac, Jacob D.; Imam, Neena; Braiman, Yehuda

Coupled arrays of Josephson junctions possess multiple stable zero voltage states. Such states can store information and consequently can be utilized for cryogenic memory applications. Basic memory operations can be implemented by sending a pulse to one of the junctions and studying transitions between the states. In order to be suitable for memory operations, such transitions between the states have to be fast and energy efficient. Here in this article we employed simulated annealing, a stochastic optimization algorithm, to study parameter optimization of array parameters which minimizes times and energies of transitions between specifically chosen states that can be utilizedmore » for memory operations (Read, Write, and Reset). Simulation results show that such transitions occur with access times on the order of 10–100 ps and access energies on the order of 10 -19–5×10 -18 J. Numerical simulations are validated with approximate analytical results.« less

The memory state heuristic: A formal model based on repeated recognition judgments.

PubMed

Castela, Marta; Erdfelder, Edgar

2017-02-01

The recognition heuristic (RH) theory predicts that, in comparative judgment tasks, if one object is recognized and the other is not, the recognized one is chosen. The memory-state heuristic (MSH) extends the RH by assuming that choices are not affected by recognition judgments per se, but by the memory states underlying these judgments (i.e., recognition certainty, uncertainty, or rejection certainty). Specifically, the larger the discrepancy between memory states, the larger the probability of choosing the object in the higher state. The typical RH paradigm does not allow estimation of the underlying memory states because it is unknown whether the objects were previously experienced or not. Therefore, we extended the paradigm by repeating the recognition task twice. In line with high threshold models of recognition, we assumed that inconsistent recognition judgments result from uncertainty whereas consistent judgments most likely result from memory certainty. In Experiment 1, we fitted 2 nested multinomial models to the data: an MSH model that formalizes the relation between memory states and binary choices explicitly and an approximate model that ignores the (unlikely) possibility of consistent guesses. Both models provided converging results. As predicted, reliance on recognition increased with the discrepancy in the underlying memory states. In Experiment 2, we replicated these results and found support for choice consistency predictions of the MSH. Additionally, recognition and choice latencies were in agreement with the MSH in both experiments. Finally, we validated critical parameters of our MSH model through a cross-validation method and a third experiment. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Design and construction of a double inversion recombination switch for heritable sequential genetic memory.

PubMed

Ham, Timothy S; Lee, Sung K; Keasling, Jay D; Arkin, Adam P

2008-07-30

Inversion recombination elements present unique opportunities for computing and information encoding in biological systems. They provide distinct binary states that are encoded into the DNA sequence itself, allowing us to overcome limitations posed by other biological memory or logic gate systems. Further, it is in theory possible to create complex sequential logics by careful positioning of recombinase recognition sites in the sequence. In this work, we describe the design and synthesis of an inversion switch using the fim and hin inversion recombination systems to create a heritable sequential memory switch. We have integrated the two inversion systems in an overlapping manner, creating a switch that can have multiple states. The switch is capable of transitioning from state to state in a manner analogous to a finite state machine, while encoding the state information into DNA. This switch does not require protein expression to maintain its state, and "remembers" its state even upon cell death. We were able to demonstrate transition into three out of the five possible states showing the feasibility of such a switch. We demonstrate that a heritable memory system that encodes its state into DNA is possible, and that inversion recombination system could be a starting point for more complex memory circuits. Although the circuit did not fully behave as expected, we showed that a multi-state, temporal memory is achievable.

Design and Construction of a Double Inversion Recombination Switch for Heritable Sequential Genetic Memory

PubMed Central

Ham, Timothy S.; Lee, Sung K.; Keasling, Jay D.; Arkin, Adam P.

2008-01-01

Background Inversion recombination elements present unique opportunities for computing and information encoding in biological systems. They provide distinct binary states that are encoded into the DNA sequence itself, allowing us to overcome limitations posed by other biological memory or logic gate systems. Further, it is in theory possible to create complex sequential logics by careful positioning of recombinase recognition sites in the sequence. Methodology/Principal Findings In this work, we describe the design and synthesis of an inversion switch using the fim and hin inversion recombination systems to create a heritable sequential memory switch. We have integrated the two inversion systems in an overlapping manner, creating a switch that can have multiple states. The switch is capable of transitioning from state to state in a manner analogous to a finite state machine, while encoding the state information into DNA. This switch does not require protein expression to maintain its state, and “remembers” its state even upon cell death. We were able to demonstrate transition into three out of the five possible states showing the feasibility of such a switch. Conclusions/Significance We demonstrate that a heritable memory system that encodes its state into DNA is possible, and that inversion recombination system could be a starting point for more complex memory circuits. Although the circuit did not fully behave as expected, we showed that a multi-state, temporal memory is achievable. PMID:18665232

Biomaterial-based Memory Device Development by Conducting Metallic DNA

DTIC Science & Technology

2013-05-28

time. Therefore, we have created a multiple-states memory system . This is the first multi-states resistance memory device by using bio-nanowire of the...world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni-DNA detection system ...ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system

Solar particle induced upsets in the TDRS-1 attitude control system RAM during the October 1989 solar particle events

NASA Astrophysics Data System (ADS)

Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard, T. L.

1995-10-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAR I unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEUs calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEUs by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEUs.

Is functional integration of resting state brain networks an unspecific biomarker for working memory performance?

PubMed

Alavash, Mohsen; Doebler, Philipp; Holling, Heinz; Thiel, Christiane M; Gießing, Carsten

2015-03-01

Is there one optimal topology of functional brain networks at rest from which our cognitive performance would profit? Previous studies suggest that functional integration of resting state brain networks is an important biomarker for cognitive performance. However, it is still unknown whether higher network integration is an unspecific predictor for good cognitive performance or, alternatively, whether specific network organization during rest predicts only specific cognitive abilities. Here, we investigated the relationship between network integration at rest and cognitive performance using two tasks that measured different aspects of working memory; one task assessed visual-spatial and the other numerical working memory. Network clustering, modularity and efficiency were computed to capture network integration on different levels of network organization, and to statistically compare their correlations with the performance in each working memory test. The results revealed that each working memory aspect profits from a different resting state topology, and the tests showed significantly different correlations with each of the measures of network integration. While higher global network integration and modularity predicted significantly better performance in visual-spatial working memory, both measures showed no significant correlation with numerical working memory performance. In contrast, numerical working memory was superior in subjects with highly clustered brain networks, predominantly in the intraparietal sulcus, a core brain region of the working memory network. Our findings suggest that a specific balance between local and global functional integration of resting state brain networks facilitates special aspects of cognitive performance. In the context of working memory, while visual-spatial performance is facilitated by globally integrated functional resting state brain networks, numerical working memory profits from increased capacities for local processing, especially in brain regions involved in working memory performance. Copyright © 2014 Elsevier Inc. All rights reserved.

78 FR 64006 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-25

... inventory of human remains under the control of the Burke Museum. The human remains were removed from Island....R50000] Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of... Memorial Washington State Museum, University of Washington (Burke Museum), has completed an inventory of...

78 FR 59955 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

... DEPARTMENT OF THE INTERIOR National Park Service [NPS-WASO-NAGPRA-13881; PPWOCRADN0-PCU00RP14.R50000] Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of.... SUMMARY: The Thomas Burke Memorial Washington State Museum, University of Washington (Burke Museum), has...

Half-State Readout In Vertical-Bloch-Line Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

1994-01-01

Potentially narrow margins of chirality-based chopping of magnetic stripes avoided. Half-state readout is experimental method of readout in Vertical-Bloch-Line (VBL) memory. Based on differential deflections of magnetic stripe domains in which data bits stored. To give meaning to explanation of half-state readout, see "Vertical-Bloch-Line Memory" (NPO-18467).

78 FR 59955 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

.... Consultation A detailed assessment of the human remains was made by the Burke Museum professional staff in....R50000] Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of... Memorial Washington State Museum, University of Washington (Burke Museum), has completed an inventory of...

Coordinated garbage collection for raid array of solid state disks

DOEpatents

Dillow, David A; Ki, Youngjae; Oral, Hakki S; Shipman, Galen M; Wang, Feiyi

2014-04-29

An optimized redundant array of solid state devices may include an array of one or more optimized solid-state devices and a controller coupled to the solid-state devices for managing the solid-state devices. The controller may be configured to globally coordinate the garbage collection activities of each of said optimized solid-state devices, for instance, to minimize the degraded performance time and increase the optimal performance time of the entire array of devices.

Stability of whole brain and regional network topology within and between resting and cognitive states.

PubMed

Rzucidlo, Justyna K; Roseman, Paige L; Laurienti, Paul J; Dagenbach, Dale

2013-01-01

Graph-theory based analyses of resting state functional Magnetic Resonance Imaging (fMRI) data have been used to map the network organization of the brain. While numerous analyses of resting state brain organization exist, many questions remain unexplored. The present study examines the stability of findings based on this approach over repeated resting state and working memory state sessions within the same individuals. This allows assessment of stability of network topology within the same state for both rest and working memory, and between rest and working memory as well. fMRI scans were performed on five participants while at rest and while performing the 2-back working memory task five times each, with task state alternating while they were in the scanner. Voxel-based whole brain network analyses were performed on the resulting data along with analyses of functional connectivity in regions associated with resting state and working memory. Network topology was fairly stable across repeated sessions of the same task, but varied significantly between rest and working memory. In the whole brain analysis, local efficiency, Eloc, differed significantly between rest and working memory. Analyses of network statistics for the precuneus and dorsolateral prefrontal cortex revealed significant differences in degree as a function of task state for both regions and in local efficiency for the precuneus. Conversely, no significant differences were observed across repeated sessions of the same state. These findings suggest that network topology is fairly stable within individuals across time for the same state, but also fluid between states. Whole brain voxel-based network analyses may prove to be a valuable tool for exploring how functional connectivity changes in response to task demands.

Large and reversible inverse magnetocaloric effect in Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire

NASA Astrophysics Data System (ADS)

Qu, Y. H.; Cong, D. Y.; Chen, Z.; Gui, W. Y.; Sun, X. M.; Li, S. H.; Ma, L.; Wang, Y. D.

2017-11-01

High-performance magnetocaloric materials should have a large reversible magnetocaloric effect and good heat exchange capability. Here, we developed a Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire with a large and reversible inverse magnetocaloric effect. As compared to the bulk counterpart, the microwire shows a better combination of magnetostructural transformation parameters (magnetization difference across transformation ΔM, transformation entropy change ΔStr, thermal hysteresis ΔThys, and transformation interval ΔTint) and thus greatly reduced critical field required for complete and reversible magnetic-field-induced transformation. A strong and reversible metamagnetic transition occurred in the microwire, which facilitates the achievement of large reversible magnetoresponsive effects. Consequently, a large and reversible magnetic-field-induced entropy change ΔSm of 12.8 J kg-1 K-1 under 5 T was achieved in the microwire, which is the highest value reported heretofore in Ni-Mn-based magnetic shape memory wires. Furthermore, since microwires have a high surface/volume ratio, they exhibit very good heat exchange capability. The present Ni48.1Co2.9Mn35.0In14.0 microwire shows great potential for magnetic refrigeration. This study may stimulate further development of high-performance magnetocaloric wires for high-efficiency and environmentally friendly solid-state cooling.

Immunologic memory in cutaneous leishmaniasis.

PubMed

Scott, Phillip

2005-12-01

Leishmania major infections induce solid immunity to reinfection. Experimental studies in mice indicate that the CD4+ T cells responsible for this immunity include two populations: parasite-dependent T effector cells and parasite-independent central memory T (Tcm) cells. While there currently is no vaccine for leishmaniasis, the existence of a long-lived population of Tcm cells that does not require the continued presence of live parasites suggests that a vaccine that expands these cells might be efficacious.

Thin tube experiments and numerical simulations of micromechanical multivariant constitutive modeling in superelastic Nitinol

NASA Astrophysics Data System (ADS)

Jung, Youngjean

This dissertation concerns the constitutive description of superelasticity in NiTi alloys and the finite element analysis of a corresponding material model at large strains. Constitutive laws for shape-memory alloys subject to biaxial loading, which are based on direct experimental observations, are generally not available. A reliable constitutive model for shape-memory alloys is important for various applications because Nitinol is now widely used in biotechnology devices such as endovascular stents, vena cava filters, dental files, archwires and guidewires, etc. As part of a broader project, tension-torsion tests are conducted on thin-walled tubes (thickness/radius ratio of 1:10) of the polycrystalline superelastic Nitinol using various loading/unloading paths under isothermal conditions. This biaxial loading/unloading test was carefully designed to avoid torsional buckling and strain non-uniformities. A micromechanical constitutive model, algorithmic implementation and numerical simulation of polycrystalline superelastic alloys under biaxial loading are developed. The constitutive model is based on the micromechanical structure of Ni-Ti crystals and accounts for the physical observation of solid-solid phase transformations through the minimization of the Helmholtz energy with dissipation. The model is formulated in finite deformations and incorporates the effect of texture which is of profound significance in the mechanical response of polycrystalline Nitinol tubes. The numerical implementation is based on the constrained minimization of a functional corresponding to the Helmholtz energy with dissipation. Special treatment of loading/unloading conditions is also developed to distinguish between forward/reverse transformation state. Simulations are conducted for thin tubes of Nitinol under tension-torsion, as well as for a simplified model of a biomedical stent.

Restoration of fMRI Decodability Does Not Imply Latent Working Memory States

PubMed Central

Schneegans, Sebastian; Bays, Paul M.

2018-01-01

Recent imaging studies have challenged the prevailing view that working memory is mediated by sustained neural activity. Using machine learning methods to reconstruct memory content, these studies found that previously diminished representations can be restored by retrospective cueing or other forms of stimulation. These findings have been interpreted as evidence for an activity-silent working memory state that can be reactivated dependent on task demands. Here, we test the validity of this conclusion by formulating a neural process model of working memory based on sustained activity and using this model to emulate a spatial recall task with retrocueing. The simulation reproduces both behavioral and fMRI results previously taken as evidence for latent states, in particular the restoration of spatial reconstruction quality following an informative cue. Our results demonstrate that recovery of the decodability of an imaging signal does not provide compelling evidence for an activity-silent working memory state. PMID:28820674

Predicting the integration of overlapping memories by decoding mnemonic processing states during learning

PubMed Central

Richter, Franziska R.; Chanales, Avi J. H.; Kuhl, Brice A.

2015-01-01

The hippocampal memory system is thought to alternate between two opposing processing states: encoding and retrieval. When present experience overlaps with past experience, this creates a potential tradeoff between encoding the present and retrieving the past. This tradeoff may be resolved by memory integration—that is, by forming a mnemonic representation that links present experience with overlapping past experience. Here, we used fMRI decoding analyses to predict when—and establish how—past and present experiences become integrated in memory. In an initial experiment, we alternately instructed subjects to adopt encoding, retrieval or integration states during overlapping learning. We then trained across-subject pattern classifiers to ‘read out’ the instructed processing states from fMRI activity patterns. We show that an integration state was clearly dissociable from encoding or retrieval states. Moreover, trial-by-trial fluctuations in decoded evidence for an integration state during learning reliably predicted behavioral expressions of successful memory integration. Strikingly, the decoding algorithm also successfully predicted specific instances of spontaneous memory integration in an entirely independent sample of subjects for whom processing state instructions were not administered. Finally, we show that medial prefrontal cortex and hippocampus differentially contribute to encoding, retrieval, and integration states: whereas hippocampus signals the tradeoff between encoding vs. retrieval states, medial prefrontal cortex actively represents past experience in relation to new learning. PMID:26327243

A Self-Organizing Incremental Spatiotemporal Associative Memory Networks Model for Problems with Hidden State

PubMed Central

2016-01-01

Identifying the hidden state is important for solving problems with hidden state. We prove any deterministic partially observable Markov decision processes (POMDP) can be represented by a minimal, looping hidden state transition model and propose a heuristic state transition model constructing algorithm. A new spatiotemporal associative memory network (STAMN) is proposed to realize the minimal, looping hidden state transition model. STAMN utilizes the neuroactivity decay to realize the short-term memory, connection weights between different nodes to represent long-term memory, presynaptic potentials, and synchronized activation mechanism to complete identifying and recalling simultaneously. Finally, we give the empirical illustrations of the STAMN and compare the performance of the STAMN model with that of other methods. PMID:27891146

An UV photochromic memory effect in proton-based WO3 electrochromic devices

NASA Astrophysics Data System (ADS)

Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

2008-11-01

We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

Remembering in Contradictory Minds: Disjunction Fallacies in Episodic Memory

ERIC Educational Resources Information Center

Brainerd, C. J.; Reyna, V. F.; Aydin, C.

2010-01-01

Disjunction fallacies have been extensively studied in probability judgment. They should also occur in episodic memory, if remembering a cue's episodic state depends on how its state is described on a memory test (e.g., being described as a target vs. as a distractor). If memory is description-dependent, cues will be remembered as occupying…

Emergence of low noise frustrated states in E/I balanced neural networks.

PubMed

Recio, I; Torres, J J

2016-12-01

We study emerging phenomena in binary neural networks where, with a probability c synaptic intensities are chosen according with a Hebbian prescription, and with probability (1-c) there is an extra random contribution to synaptic weights. This new term, randomly taken from a Gaussian bimodal distribution, balances the synaptic population in the network so that one has 80%-20% relation in E/I population ratio, mimicking the balance observed in mammals cortex. For some regions of the relevant parameters, our system depicts standard memory (at low temperature) and non-memory attractors (at high temperature). However, as c decreases and the level of the underlying noise also decreases below a certain temperature T t , a kind of memory-frustrated state, which resembles spin-glass behavior, sharply emerges. Contrary to what occurs in Hopfield-like neural networks, the frustrated state appears here even in the limit of the loading parameter α→0. Moreover, we observed that the frustrated state in fact corresponds to two states of non-vanishing activity uncorrelated with stored memories, associated, respectively, to a high activity or Up state and to a low activity or Down state. Using a linear stability analysis, we found regions in the space of relevant parameters for locally stable steady states and demonstrated that frustrated states coexist with memory attractors below T t . Then, multistability between memory and frustrated states is present for relatively small c, and metastability of memory attractors can emerge as c decreases even more. We studied our system using standard mean-field techniques and with Monte Carlo simulations, obtaining a perfect agreement between theory and simulations. Our study can be useful to explain the role of synapse heterogeneity on the emergence of stable Up and Down states not associated to memory attractors, and to explore the conditions to induce transitions among them, as in sleep-wake transitions. Copyright © 2016 Elsevier Ltd. All rights reserved.

Excitation of photonic atoms (dielectric microspheres) on optical fibers: application to room-temperature persistent spectral hole burning

NASA Astrophysics Data System (ADS)

Serpenguzel, Ali; Arnold, Stephen; Griffel, Giora

1995-05-01

Recently, photonic atoms (dielectric microspheres) have enjoyed the attention of the optical spectroscopy community. A variety of linear and nonlinear optical processes have been observed in liquid microdroplets. But solid state photonic devices using these properties are scarce. A first of these applications is the room temperature microparticle hole-burning memory. New applications can be envisioned if microparticle resonances can be coupled to traveling waves in optical fibers. In this paper we demonstrate the excitation of narrow morphology dependent resonances of microparticles placed on an optical fiber. Furthermore we reveal a model for this process which describes the coupling efficiency in terms of the geometrical and material properties of the microparticle-fiber system.

Well Monitoring System For EGS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normann, Randy; Glowka, Dave; Normann, Charles

This grant is a collection of projects designed to move aircraft high temperature electronics technology into the geothermal industry. Randy Normann is the lead. He licensed the HT83SNL00 chip from Sandia National Labs. This chip enables aircraft developed electronics for work within a geothermal well logging tool. However, additional elements are needed to achieve commercially successful logging tools. These elements are offered by a strong list of industrial partners on this grant as: Electrochemical Systems Inc. for HT Rechargeable Batteries, Frequency Management Systems for 300C digital clock, Sandia National Labs for experts in high temperature solder, Honeywell Solid-State Electronics Centermore » for reprogrammable high temperature memory. During the course of this project MagiQ Technologies for high temperature fiber optics.« less

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Noise-Resilient Quantum Computing with a Nitrogen-Vacancy Center and Nuclear Spins.

PubMed

Casanova, J; Wang, Z-Y; Plenio, M B

2016-09-23

Selective control of qubits in a quantum register for the purposes of quantum information processing represents a critical challenge for dense spin ensembles in solid-state systems. Here we present a protocol that achieves a complete set of selective electron-nuclear gates and single nuclear rotations in such an ensemble in diamond facilitated by a nearby nitrogen-vacancy (NV) center. The protocol suppresses internuclear interactions as well as unwanted coupling between the NV center and other spins of the ensemble to achieve quantum gate fidelities well exceeding 99%. Notably, our method can be applied to weakly coupled, distant spins representing a scalable procedure that exploits the exceptional properties of nuclear spins in diamond as robust quantum memories.

A seismic signal processor suitable for use with the NOAA/GOES satellite data collection system

NASA Technical Reports Server (NTRS)

Webster, W. J., Jr.; Miller, W. H.; Whitley, R.; Allenby, R. J.; Dennison, R. T.

1981-01-01

Because of the high data-rate requirements, a practical system capable of collecting seismic information in the field and relaying it, via satellite, to a central collection point is not yet available. A seismic signal processor has been developed and tested for use with the NOAA/GOES satellite data collection system. Performance tests on recorded, as well as real time, short period signals indicate that the event recognition technique used is nearly perfect in its rejection of environmental noise and other non-seismic signals and that, with the use of solid state buffer memories, data can be acquired in many swarm situations. The design of a complete field data collection platform is discussed based on the prototype evaluation.

A review of lithium and non-lithium based solid state batteries

NASA Astrophysics Data System (ADS)

Kim, Joo Gon; Son, Byungrak; Mukherjee, Santanu; Schuppert, Nicholas; Bates, Alex; Kwon, Osung; Choi, Moon Jong; Chung, Hyun Yeol; Park, Sam

2015-05-01

Conventional lithium-ion liquid-electrolyte batteries are widely used in portable electronic equipment such as laptop computers, cell phones, and electric vehicles; however, they have several drawbacks, including expensive sealing agents and inherent hazards of fire and leakages. All solid state batteries utilize solid state electrolytes to overcome the safety issues of liquid electrolytes. Drawbacks for all-solid state lithium-ion batteries include high resistance at ambient temperatures and design intricacies. This paper is a comprehensive review of all aspects of solid state batteries: their design, the materials used, and a detailed literature review of various important advances made in research. The paper exhaustively studies lithium based solid state batteries, as they are the most prevalent, but also considers non-lithium based systems. Non-lithium based solid state batteries are attaining widespread commercial applications, as are also lithium based polymeric solid state electrolytes. Tabular representations and schematic diagrams are provided to underscore the unique characteristics of solid state batteries and their capacity to occupy a niche in the alternative energy sector.

Asymmetric soft-error resistant memory

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Perlman, Marvin (Inventor)

1991-01-01

A memory system is provided, of the type that includes an error-correcting circuit that detects and corrects, that more efficiently utilizes the capacity of a memory formed of groups of binary cells whose states can be inadvertently switched by ionizing radiation. Each memory cell has an asymmetric geometry, so that ionizing radiation causes a significantly greater probability of errors in one state than in the opposite state (e.g., an erroneous switch from '1' to '0' is far more likely than a switch from '0' to'1'. An asymmetric error correcting coding circuit can be used with the asymmetric memory cells, which requires fewer bits than an efficient symmetric error correcting code.

Continuous-variable quantum computing in optical time-frequency modes using quantum memories.

PubMed

Humphreys, Peter C; Kolthammer, W Steven; Nunn, Joshua; Barbieri, Marco; Datta, Animesh; Walmsley, Ian A

2014-09-26

We develop a scheme for time-frequency encoded continuous-variable cluster-state quantum computing using quantum memories. In particular, we propose a method to produce, manipulate, and measure two-dimensional cluster states in a single spatial mode by exploiting the intrinsic time-frequency selectivity of Raman quantum memories. Time-frequency encoding enables the scheme to be extremely compact, requiring a number of memories that are a linear function of only the number of different frequencies in which the computational state is encoded, independent of its temporal duration. We therefore show that quantum memories can be a powerful component for scalable photonic quantum information processing architectures.

Improvement in the Shape Memory Response of Ti50.5Ni24.5Pd25 High-Temperature Shape Memory Alloy with Scandium Microalloying

NASA Technical Reports Server (NTRS)

Atli, K. C.; Karaman, I; Noebe, R. D.; Garg, A.; Chumlyakov, Y. I.; Kireeva, I. V.

2010-01-01

A Ti(50.5)Ni(24.5)Pd25 high-temperature shape memory alloy (HTSMA) is microalloyed with 0.5 at. pct scandium (Sc) to enhance its shape-memory characteristics, in particular, dimensional stability under repeated thermomechanical cycles. For both Ti(50.5)Ni(24.5)Pd25 and the Sc-alloyed material, differential scanning calorimetry is conducted for multiple cycles to characterize cyclic stability of the transformation temperatures. The microstructure is evaluated using electron microscopy, X-ray diffractometry, and wavelength dispersive spectroscopy. Isobaric thermal cycling experiments are used to determine transformation temperatures, dimensional stability, and work output as a function of stress. The Sc-doped alloy displays more stable shape memory response with smaller irrecoverable strain and narrower thermal hysteresis than the baseline ternary alloy. This improvement in performance is attributed to the solid solution hardening effect of Sc.

Kinetic memory based on the enzyme-limited competition.

PubMed

Hatakeyama, Tetsuhiro S; Kaneko, Kunihiko

2014-08-01

Cellular memory, which allows cells to retain information from their environment, is important for a variety of cellular functions, such as adaptation to external stimuli, cell differentiation, and synaptic plasticity. Although posttranslational modifications have received much attention as a source of cellular memory, the mechanisms directing such alterations have not been fully uncovered. It may be possible to embed memory in multiple stable states in dynamical systems governing modifications. However, several experiments on modifications of proteins suggest long-term relaxation depending on experienced external conditions, without explicit switches over multi-stable states. As an alternative to a multistability memory scheme, we propose "kinetic memory" for epigenetic cellular memory, in which memory is stored as a slow-relaxation process far from a stable fixed state. Information from previous environmental exposure is retained as the long-term maintenance of a cellular state, rather than switches over fixed states. To demonstrate this kinetic memory, we study several models in which multimeric proteins undergo catalytic modifications (e.g., phosphorylation and methylation), and find that a slow relaxation process of the modification state, logarithmic in time, appears when the concentration of a catalyst (enzyme) involved in the modification reactions is lower than that of the substrates. Sharp transitions from a normal fast-relaxation phase into this slow-relaxation phase are revealed, and explained by enzyme-limited competition among modification reactions. The slow-relaxation process is confirmed by simulations of several models of catalytic reactions of protein modifications, and it enables the memorization of external stimuli, as its time course depends crucially on the history of the stimuli. This kinetic memory provides novel insight into a broad class of cellular memory and functions. In particular, applications for long-term potentiation are discussed, including dynamic modifications of calcium-calmodulin kinase II and cAMP-response element-binding protein essential for synaptic plasticity.

Resting state EEG correlates of memory consolidation.

PubMed

Brokaw, Kate; Tishler, Ward; Manceor, Stephanie; Hamilton, Kelly; Gaulden, Andrew; Parr, Elaine; Wamsley, Erin J

2016-04-01

Numerous studies demonstrate that post-training sleep benefits human memory. At the same time, emerging data suggest that other resting states may similarly facilitate consolidation. In order to identify the conditions under which non-sleep resting states benefit memory, we conducted an EEG (electroencephalographic) study of verbal memory retention across 15min of eyes-closed rest. Participants (n=26) listened to a short story and then either rested with their eyes closed, or else completed a distractor task for 15min. A delayed recall test was administered immediately following the rest period. We found, first, that quiet rest enhanced memory for the short story. Improved memory was associated with a particular EEG signature of increased slow oscillatory activity (<1Hz), in concert with reduced alpha (8-12Hz) activity. Mindwandering during the retention interval was also associated with improved memory. These observations suggest that a short period of quiet rest can facilitate memory, and that this may occur via an active process of consolidation supported by slow oscillatory EEG activity and characterized by decreased attention to the external environment. Slow oscillatory EEG rhythms are proposed to facilitate memory consolidation during sleep by promoting hippocampal-cortical communication. Our findings suggest that EEG slow oscillations could play a significant role in memory consolidation during other resting states as well. Copyright © 2016 Elsevier Inc. All rights reserved.

A Hamiltonian driven quantum-like model for overdistribution in episodic memory recollection.

NASA Astrophysics Data System (ADS)

Broekaert, Jan B.; Busemeyer, Jerome R.

2017-06-01

While people famously forget genuine memories over time, they also tend to mistakenly over-recall equivalent memories concerning a given event. The memory phenomenon is known by the name of episodic overdistribution and occurs both in memories of disjunctions and partitions of mutually exclusive events and has been tested, modeled and documented in the literature. The total classical probability of recalling exclusive sub-events most often exceeds the probability of recalling the composed event, i.e. a subadditive total. We present a Hamiltonian driven propagation for the Quantum Episodic Memory model developed by Brainerd (et al., 2015) for the episodic memory overdistribution in the experimental immediate item false memory paradigm (Brainerd and Reyna, 2008, 2010, 2015). Following the Hamiltonian method of Busemeyer and Bruza (2012) our model adds time-evolution of the perceived memory state through the stages of the experimental process based on psychologically interpretable parameters - γ_c for recollection capability of cues, κ_p for bias or description-dependence by probes and β for the average gist component in the memory state at start. With seven parameters the Hamiltonian model shows good accuracy of predictions both in the EOD-disjunction and in the EOD-subadditivity paradigm. We noticed either an outspoken preponderance of the gist over verbatim trace, or the opposite, in the initial memory state when β is real. Only for complex β a mix of both traces is present in the initial state for the EOD-subadditivity paradigm.

Processes of Quantum Associative Memory (QuAM) Through New Maximally Entangled States (Singh-Rajput MES)

NASA Astrophysics Data System (ADS)

Singh, Manu Pratap; Rajput, B. S.

2016-07-01

Using Singh-Rajput MES as memory states in the evolutionary process of pattern storage and the non-evolutionary process of pattern recall (the two fundamental constituents of QuAM), the suitability and superiority of these MES over Bell's MES have been demonstrated in both these processes. It has been shown that, under the operations of all the possible memorization operators for a two-qubit system, the first two states of Singh-Rajput MES are useful for storing the pattern |11> and the last two of these MES are useful in storing the pattern |10> while Bell's MES are not much suitable as memory states in a valid memorization process. The recall operations have also been conducted by separately choosing Singh-Rajput MES and Bell's MES as memory states for possible various queries and it has been shown that in each case the choices of Singh-Rajput MES as valid memory states are much more suitable than those of Bell's MES.

The Memory State Heuristic: A Formal Model Based on Repeated Recognition Judgments

ERIC Educational Resources Information Center

Castela, Marta; Erdfelder, Edgar

2017-01-01

The recognition heuristic (RH) theory predicts that, in comparative judgment tasks, if one object is recognized and the other is not, the recognized one is chosen. The memory-state heuristic (MSH) extends the RH by assuming that choices are not affected by recognition judgments per se, but by the memory states underlying these judgments (i.e.,…

Episodic Memory Does Not Add Up: Verbatim-Gist Superposition Predicts Violations of the Additive Law of Probability

PubMed Central

Brainerd, C. J.; Wang, Zheng; Reyna, Valerie. F.; Nakamura, K.

2015-01-01

Fuzzy-trace theory’s assumptions about memory representation are cognitive examples of the familiar superposition property of physical quantum systems. When those assumptions are implemented in a formal quantum model (QEMc), they predict that episodic memory will violate the additive law of probability: If memory is tested for a partition of an item’s possible episodic states, the individual probabilities of remembering the item as belonging to each state must sum to more than 1. We detected this phenomenon using two standard designs, item false memory and source false memory. The quantum implementation of fuzzy-trace theory also predicts that violations of the additive law will vary in strength as a function of reliance on gist memory. That prediction, too, was confirmed via a series of manipulations (e.g., semantic relatedness, testing delay) that are thought to increase gist reliance. Surprisingly, an analysis of the underlying structure of violations of the additive law revealed that as a general rule, increases in remembering correct episodic states do not produce commensurate reductions in remembering incorrect states. PMID:26236091

Sequence memory based on coherent spin-interaction neural networks.

PubMed

Xia, Min; Wong, W K; Wang, Zhijie

2014-12-01

Sequence information processing, for instance, the sequence memory, plays an important role on many functions of brain. In the workings of the human brain, the steady-state period is alterable. However, in the existing sequence memory models using heteroassociations, the steady-state period cannot be changed in the sequence recall. In this work, a novel neural network model for sequence memory with controllable steady-state period based on coherent spininteraction is proposed. In the proposed model, neurons fire collectively in a phase-coherent manner, which lets a neuron group respond differently to different patterns and also lets different neuron groups respond differently to one pattern. The simulation results demonstrating the performance of the sequence memory are presented. By introducing a new coherent spin-interaction sequence memory model, the steady-state period can be controlled by dimension parameters and the overlap between the input pattern and the stored patterns. The sequence storage capacity is enlarged by coherent spin interaction compared with the existing sequence memory models. Furthermore, the sequence storage capacity has an exponential relationship to the dimension of the neural network.

Memory color of natural familiar objects: effects of surface texture and 3-D shape.

PubMed

Vurro, Milena; Ling, Yazhu; Hurlbert, Anya C

2013-06-28

Natural objects typically possess characteristic contours, chromatic surface textures, and three-dimensional shapes. These diagnostic features aid object recognition, as does memory color, the color most associated in memory with a particular object. Here we aim to determine whether polychromatic surface texture, 3-D shape, and contour diagnosticity improve memory color for familiar objects, separately and in combination. We use solid three-dimensional familiar objects rendered with their natural texture, which participants adjust in real time to match their memory color for the object. We analyze mean, accuracy, and precision of the memory color settings relative to the natural color of the objects under the same conditions. We find that in all conditions, memory colors deviate slightly but significantly in the same direction from the natural color. Surface polychromaticity, shape diagnosticity, and three dimensionality each improve memory color accuracy, relative to uniformly colored, generic, or two-dimensional shapes, respectively. Shape diagnosticity improves the precision of memory color also, and there is a trend for polychromaticity to do so as well. Differently from other studies, we find that the object contour alone also improves memory color. Thus, enhancing the naturalness of the stimulus, in terms of either surface or shape properties, enhances the accuracy and precision of memory color. The results support the hypothesis that memory color representations are polychromatic and are synergistically linked with diagnostic shape representations.

Deformation and Failure Mechanisms of Shape Memory Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daly, Samantha Hayes

2015-04-15

The goal of this research was to understand the fundamental mechanics that drive the deformation and failure of shape memory alloys (SMAs). SMAs are difficult materials to characterize because of the complex phase transformations that give rise to their unique properties, including shape memory and superelasticity. These phase transformations occur across multiple length scales (one example being the martensite-austenite twinning that underlies macroscopic strain localization) and result in a large hysteresis. In order to optimize the use of this hysteretic behavior in energy storage and damping applications, we must first have a quantitative understanding of this transformation behavior. Prior resultsmore » on shape memory alloys have been largely qualitative (i.e., mapping phase transformations through cracked oxide coatings or surface morphology). The PI developed and utilized new approaches to provide a quantitative, full-field characterization of phase transformation, conducting a comprehensive suite of experiments across multiple length scales and tying these results to theoretical and computational analysis. The research funded by this award utilized new combinations of scanning electron microscopy, diffraction, digital image correlation, and custom testing equipment and procedures to study phase transformation processes at a wide range of length scales, with a focus at small length scales with spatial resolution on the order of 1 nanometer. These experiments probe the basic connections between length scales during phase transformation. In addition to the insights gained on the fundamental mechanisms driving transformations in shape memory alloys, the unique experimental methodologies developed under this award are applicable to a wide range of solid-to-solid phase transformations and other strain localization mechanisms.« less

Ceramic Electrolyte Membrane Technology: Enabling Revolutionary Electrochemical Energy Storage

DTIC Science & Technology

2015-10-05

ion batteries . Solid-state Li- ion batteries could significantly improve safety and eliminate the need for complex...advancing ceramic electrolyte technology for use in solid-state Li- ion batteries . Solid-state Li- ion batteries could significantly improve safety and...technology for use in solid-state Li- ion batteries and high specific energy Li-S and Li- air batteries . Solid-state Li- ion batteries could

Uncertainty relations with quantum memory for the Wehrl entropy

NASA Astrophysics Data System (ADS)

De Palma, Giacomo

2018-03-01

We prove two new fundamental uncertainty relations with quantum memory for the Wehrl entropy. The first relation applies to the bipartite memory scenario. It determines the minimum conditional Wehrl entropy among all the quantum states with a given conditional von Neumann entropy and proves that this minimum is asymptotically achieved by a suitable sequence of quantum Gaussian states. The second relation applies to the tripartite memory scenario. It determines the minimum of the sum of the Wehrl entropy of a quantum state conditioned on the first memory quantum system with the Wehrl entropy of the same state conditioned on the second memory quantum system and proves that also this minimum is asymptotically achieved by a suitable sequence of quantum Gaussian states. The Wehrl entropy of a quantum state is the Shannon differential entropy of the outcome of a heterodyne measurement performed on the state. The heterodyne measurement is one of the main measurements in quantum optics and lies at the basis of one of the most promising protocols for quantum key distribution. These fundamental entropic uncertainty relations will be a valuable tool in quantum information and will, for example, find application in security proofs of quantum key distribution protocols in the asymptotic regime and in entanglement witnessing in quantum optics.

Transfer Function Bounds for Partial-unit-memory Convolutional Codes Based on Reduced State Diagram

NASA Technical Reports Server (NTRS)

Lee, P. J.

1984-01-01

The performance of a coding system consisting of a convolutional encoder and a Viterbi decoder is analytically found by the well-known transfer function bounding technique. For the partial-unit-memory byte-oriented convolutional encoder with m sub 0 binary memory cells and (k sub 0 m sub 0) inputs, a state diagram of 2(K) (sub 0) was for the transfer function bound. A reduced state diagram of (2 (m sub 0) +1) is used for easy evaluation of transfer function bounds for partial-unit-memory codes.

Role of state-dependent learning in the cognitive effects of caffeine in mice.

PubMed

Sanday, Leandro; Zanin, Karina A; Patti, Camilla L; Fernandes-Santos, Luciano; Oliveira, Larissa C; Longo, Beatriz M; Andersen, Monica L; Tufik, Sergio; Frussa-Filho, Roberto

2013-08-01

Caffeine is the most widely used psychoactive substance in the world and it is generally believed that it promotes beneficial effects on cognitive performance. However, there is also evidence suggesting that caffeine has inhibitory effects on learning and memory. Considering that caffeine may have anxiogenic effects, thus changing the emotional state of the subjects, state-dependent learning may play a role in caffeine-induced cognitive alterations. Mice were administered 20 mg/kg caffeine before training and/or before testing both in the plus-maze discriminative avoidance task (an animal model that concomitantly evaluates learning, memory, anxiety-like behaviour and general activity) and in the inhibitory avoidance task, a classic paradigm for evaluating memory in rodents. Pre-training caffeine administration did not modify learning, but produced an anxiogenic effect and impaired memory retention. While pre-test administration of caffeine did not modify retrieval on its own, the pre-test administration counteracted the memory deficit induced by the pre-training caffeine injection in both the plus-maze discriminative and inhibitory avoidance tasks. Our data demonstrate that caffeine-induced memory deficits are critically related to state-dependent learning, reinforcing the importance of considering the participation of state-dependency on the interpretation of the cognitive effects of caffeine. The possible participation of caffeine-induced anxiety alterations in state-dependent memory deficits is discussed.

A recursive solution for a fading memory filter derived from Kalman filter theory

NASA Technical Reports Server (NTRS)

Statman, J. I.

1986-01-01

A simple recursive solution for a class of fading memory tracking filters is presented. A fading memory filter provides estimates of filter states based on past measurements, similar to a traditional Kalman filter. Unlike a Kalman filter, an exponentially decaying weight is applied to older measurements, discounting their effect on present state estimates. It is shown that Kalman filters and fading memory filters are closely related solutions to a general least squares estimator problem. Closed form filter transfer functions are derived for a time invariant, steady state, fading memory filter. These can be applied in loop filter implementation of the Deep Space Network (DSN) Advanced Receiver carrier phase locked loop (PLL).

On Common Ground: Jost's (1897) Law of Forgetting and Ribot's (1881) Law of Retrograde Amnesia

ERIC Educational Resources Information Center

Wixted, John T.

2004-01-01

T. Ribot's (1881) law of retrograde amnesia states that brain damage impairs recently formed memories to a greater extent than older memories, which is generally taken to imply that memories need time to consolidate. A. Jost's (1897) law of forgetting states that if 2 memories are of the same strength but different ages, the older will decay more…

Feasibility study of molecular memory device based on DNA using methylation to store information

NASA Astrophysics Data System (ADS)

Jiang, Liming; Qiu, Wanzhi; Al-Dirini, Feras; Hossain, Faruque M.; Evans, Robin; Skafidas, Efstratios

2016-07-01

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

Packaging of solid state devices

DOEpatents

Glidden, Steven C.; Sanders, Howard D.

2006-01-03

A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

Goal-Directed Modulation of Neural Memory Patterns: Implications for fMRI-Based Memory Detection.

PubMed

Uncapher, Melina R; Boyd-Meredith, J Tyler; Chow, Tiffany E; Rissman, Jesse; Wagner, Anthony D

2015-06-03

Remembering a past event elicits distributed neural patterns that can be distinguished from patterns elicited when encountering novel information. These differing patterns can be decoded with relatively high diagnostic accuracy for individual memories using multivoxel pattern analysis (MVPA) of fMRI data. Brain-based memory detection--if valid and reliable--would have clear utility beyond the domain of cognitive neuroscience, in the realm of law, marketing, and beyond. However, a significant boundary condition on memory decoding validity may be the deployment of "countermeasures": strategies used to mask memory signals. Here we tested the vulnerability of fMRI-based memory detection to countermeasures, using a paradigm that bears resemblance to eyewitness identification. Participants were scanned while performing two tasks on previously studied and novel faces: (1) a standard recognition memory task; and (2) a task wherein they attempted to conceal their true memory state. Univariate analyses revealed that participants were able to strategically modulate neural responses, averaged across trials, in regions implicated in memory retrieval, including the hippocampus and angular gyrus. Moreover, regions associated with goal-directed shifts of attention and thought substitution supported memory concealment, and those associated with memory generation supported novelty concealment. Critically, whereas MVPA enabled reliable classification of memory states when participants reported memory truthfully, the ability to decode memory on individual trials was compromised, even reversing, during attempts to conceal memory. Together, these findings demonstrate that strategic goal states can be deployed to mask memory-related neural patterns and foil memory decoding technology, placing a significant boundary condition on their real-world utility. Copyright © 2015 the authors 0270-6474/15/358531-15$15.00/0.

Tramadol state-dependent memory: involvement of dorsal hippocampal muscarinic acetylcholine receptors.

PubMed

Jafari-Sabet, Majid; Jafari-Sabet, Ali-Reza; Dizaji-Ghadim, Ali

2016-08-01

The effects on tramadol state-dependent memory of bilateral intradorsal hippocampal (intra-CA1) injections of physostigmine, an acetylcholinesterase inhibitor, and atropine, a muscarinic acetylcholine receptor antagonist, were examined in adult male NMRI mice. A single-trial step-down passive avoidance task was used for the assessment of memory retention. Post-training intra-CA1 administration of an atypical μ-opioid receptor agonist, tramadol (0.5 and 1 μg/mouse), dose dependently impaired memory retention. Pretest injection of tramadol (0.5 and 1 μg/mouse, intra-CA1) induced state-dependent retrieval of the memory acquired under the influence of post-training tramadol (1 μg/mouse, intra-CA1). A pretest intra-CA1 injection of physostigmine (1 μg/mouse) reversed the memory impairment induced by post-training administration of tramadol (1 μg/mouse, intra-CA1). Moreover, pretest administration of physostigmine (0.5 and 1 μg/mouse, intra-CA1) with an ineffective dose of tramadol (0.25 μg/mouse, intra-CA1) also significantly restored retrieval. Pretest administration of physostigmine (0.25, 0.5, and 1 μg/mouse, intra-CA1) by itself did not affect memory retention. A pretest intra-CA1 injection of the atropine (1 and 2 μg/mouse) 5 min before the administration of tramadol (1 μg/mouse, intra-CA1) dose dependently inhibited tramadol state-dependent memory. Pretest administration of atropine (0.5, 1, and 2 μg/mouse, intra-CA1) by itself did not affect memory retention. It can be concluded that dorsal hippocampal muscarinic acetylcholine receptor mechanisms play an important role in the modulation of tramadol state-dependent memory.

Generation of programmable temporal pulse shape and applications in micromachining

NASA Astrophysics Data System (ADS)

Peng, X.; Jordens, B.; Hooper, A.; Baird, B. W.; Ren, W.; Xu, L.; Sun, L.

2009-02-01

In this paper we presented a pulse shaping technique on regular solid-state lasers and the application in semiconductor micromachining. With a conventional Q-switched laser, all of the parameters can be adjusted over only limited ranges, especially the pulse width and pulse shape. However, some laser link processes using traditional laser pulses with pulse widths of a few nanoseconds to a few tens of nanoseconds tend to over-crater in thicker overlying passivation layers and thereby cause IC reliability problems. Use of a laser pulse with a special shape and a fast leading edge, such as tailored pulse, is one technique for controlling link processing. The pulse shaping technique is based on light-loop controlled optical modulation to shape conventional Q-switched solid-state lasers. One advantage of the pulse shaping technique is to provide a tailored pulse shape that can be programmed to have more than one amplitude value. Moreover, it has the capability of providing programmable tailored pulse shapes with discrete amplitude and time duration components. In addition, it provides fast rising and fall time of each pulse at fairly high repetition rate at 355nm with good beam quality. The regular-to-shaped efficiency is up to 50%. We conclude with a discussion of current results for laser processing of semiconductor memory link structures using programmable temporal pulse shapes. The processing experiments showed promising results with shaped pulse.

A finite element analysis modeling tool for solid oxide fuel cell development: coupled electrochemistry, thermal and flow analysis in MARC®

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaleel, Mohammad A.; Lin, Zijing; Singh, Prabhakar

2004-05-03

A 3D simulation tool for modeling solid oxide fuel cells is described. The tool combines the versatility and efficiency of a commercial finite element analysis code, MARC{reg_sign}, with an in-house developed robust and flexible electrochemical (EC) module. Based upon characteristic parameters obtained experimentally and assigned by the user, the EC module calculates the current density distribution, heat generation, and fuel and oxidant species concentration, taking the temperature profile provided by MARC{reg_sign} and operating conditions such as the fuel and oxidant flow rate and the total stack output voltage or current as the input. MARC{reg_sign} performs flow and thermal analyses basedmore » on the initial and boundary thermal and flow conditions and the heat generation calculated by the EC module. The main coupling between MARC{reg_sign} and EC is for MARC{reg_sign} to supply the temperature field to EC and for EC to give the heat generation profile to MARC{reg_sign}. The loosely coupled, iterative scheme is advantageous in terms of memory requirement, numerical stability and computational efficiency. The coupling is iterated to self-consistency for a steady-state solution. Sample results for steady states as well as the startup process for stacks with different flow designs are presented to illustrate the modeling capability and numerical performance characteristic of the simulation tool.« less

Resonant tunneling based graphene quantum dot memristors.

PubMed

Pan, Xuan; Skafidas, Efstratios

2016-12-08

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Nitric oxide in the dorsal hippocampal area is involved on muscimol state-dependent memory in the step-down passive avoidance test.

PubMed

Jafari-Sabet, Majid; Khodadadnejad, Mohammad-Amin; Ghoraba, Saeed; Ataee, Ramin

2014-02-01

In the present study, the effects of intra-dorsal hippocampal (intra-CA1) injections of nitric oxide (NO) agents on muscimol state-dependent memory were examined in mice. A single-trial step-down passive avoidance task was used for the assessment of memory retrieval in adult male NMRI mice. Post-training intra-CA1 administration of a GABAA receptor agonist, muscimol (0.05 and 0.1 μg/mouse) dose dependently induced impairment of memory retention. Pre-test injection of muscimol (0.05 and 0.1 μg/mouse) induced state-dependent retrieval of the memory acquired under post-training muscimol (0.1 μg/mouse, intra-CA1) influence. Pre-test injection of a NO precursor, L-arginine (1 and 2 μg/mouse, intra-CA1) improved memory retention, although the low dose of the drug (0.5 μg/mouse) did not affect memory retention. Pre-test injection of an inhibitor of NO-synthase, L-NAME (0.5 and 1 μg/mouse, intra-CA1) impaired memory retention, although the low dose of the drug (0.25 μg/mouse) did not affect memory retention. In other series of experiments, pre-test intra-CA1 injection of L-arginine (0.25 and 0.5 μg/mouse) 5 min before the administration of muscimol (0.1 μg/mouse, intra-CA1) dose dependently inhibited muscimol state-dependent memory. Pre-test intra-CA1 administration of L-arginine (0.125, 0.25 and 0.5 μg/mouse) by itself cannot affect memory retention. Pre-test intra-CA1 injection of L-NAME (0.25 μg/mouse, intra-CA1) reversed the memory impairment induced by post-training administration of muscimol (0.1 μg/mouse, intra-CA1). Moreover, pre-test administration of L-NAME (0.125 and 0.25 μg/mouse, intra-CA1) with an ineffective dose of muscimol (0.025 μg/mouse, intra-CA1) significantly restored the retrieval and induced muscimol state-dependent memory. Pre-test intra-CA1 administration of L-NAME (0.0625, 0.125 and 0.25 μg/mouse) by itself cannot affect memory retention. It may be suggested that the nitric oxide in the dorsal hippocampal area play an important role in muscimol state-dependent memory. Copyright © 2013 Elsevier Inc. All rights reserved.

Memory Reconsolidation and Computational Learning

DTIC Science & Technology

2010-03-01

Cooper and H.T. Siegelmann, "Memory Reconsolidation for Natural Language Processing," Cognitive Neurodynamics , 3, 2009: 365-372. M.M. Olsen, N...computerized memories and other state of the art cognitive architectures, our memory system has the ability to process on-line and in real-time as...on both continuous and binary inputs, unlike state of the art methods in case based reasoning and in cognitive architectures, which are bound to

Solid state recorders for airborne reconnaissance

NASA Astrophysics Data System (ADS)

Klang, Mark R.

2003-08-01

Solid state recorders have become the recorder of choice for meeting airborne ruggedized requirements for reconnaissance and flight test. The cost of solid state recorders have decreased over the past few years that they are now less expense than the traditional high speed tape recorders. CALCULEX, Inc manufactures solid state recorders called MONSSTR (Modular Non-volatile Solid State Recorder). MONSSTR is being used on many different platforms such as F/A-22, Global Hawk, F-14, F-15, F-16, U-2, RF-4, and Tornado. This paper will discuss the advantages of using solid state recorders to meet the airborne reconnaissance requirement and the ability to record instrumentation data. The CALCULEX recorder has the ability to record sensor data and flight test data in the same chassis. This is an important feature because it eliminates additional boxes on the aircraft. The major advantages to using a solid state recorder include; reliability, small size, light weight, and power. Solid state recorders also have a larger storage capacity and higher bandwidth capability than other recording devices.

The solid-state terahertz spectrum of MDMA (Ecstasy) - A unique test for molecular modeling assignments

NASA Astrophysics Data System (ADS)

Allis, Damian G.; Hakey, Patrick M.; Korter, Timothy M.

2008-10-01

The terahertz (THz, far-infrared) spectrum of 3,4-methylene-dioxymethamphetamine hydrochloride (Ecstasy) is simulated using solid-state density functional theory. While a previously reported isolated-molecule calculation is noteworthy for the precision of its solid-state THz reproduction, the solid-state calculation predicts that the isolated-molecule modes account for only half of the spectral features in the THz region, with the remaining structure arising from lattice vibrations that cannot be predicted without solid-state molecular modeling. The molecular origins of the internal mode contributions to the solid-state THz spectrum, as well as the proper consideration of the protonation state of the molecule, are also considered.

76 FR 36176 - Pricing for National September 11 Memorial & Museum Commemorative Medal

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-21

... DEPARTMENT OF THE TREASURY United States Mint Pricing for National September 11 Memorial & Museum Commemorative Medal ACTION: Notice. SUMMARY: The United States Mint is announcing the price of the National September 11 Memorial & Museum Commemorative Medal. Introductory pricing will be $56.95, and regular pricing...

75 FR 36671 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-28

... DEPARTMENT OF THE INTERIOR National Park Service Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of Washington, Seattle, WA; Correction AGENCY: National Park... human remains and associated funerary objects in the possession of the Thomas Burke Memorial Washington...

Multilevel resistive information storage and retrieval

DOEpatents

Lohn, Andrew; Mickel, Patrick R.

2016-08-09

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

Zero-dynamics principle for perfect quantum memory in linear networks

NASA Astrophysics Data System (ADS)

Yamamoto, Naoki; James, Matthew R.

2014-07-01

In this paper, we study a general linear networked system that contains a tunable memory subsystem; that is, it is decoupled from an optical field for state transportation during the storage process, while it couples to the field during the writing or reading process. The input is given by a single photon state or a coherent state in a pulsed light field. We then completely and explicitly characterize the condition required on the pulse shape achieving the perfect state transfer from the light field to the memory subsystem. The key idea to obtain this result is the use of zero-dynamics principle, which in our case means that, for perfect state transfer, the output field during the writing process must be a vacuum. A useful interpretation of the result in terms of the transfer function is also given. Moreover, a four-node network composed of atomic ensembles is studied as an example, demonstrating how the input field state is transferred to the memory subsystem and what the input pulse shape to be engineered for perfect memory looks like.

Networks of Memories

DTIC Science & Technology

2013-03-01

2000). The construction of  autobiographical   memories in the self­memory system. Psychological Review, 107(2), 261­288. Dennis, S., & Chapman, A. (2010...AFRL-OSR-VA-TR-2013-0131 Networks of Memories Simon Dennis, Mikhail Belkin Ohio State University March 2013 Final...Back (Rev. 8/98) 1 Networks of  Memories FA9550­09­1­0614 Professor Jay Myung PI: Simon Dennis Ohio State University February 15, 2013 2 Introduction

Static power reduction for midpoint-terminated busses

DOEpatents

Coteus, Paul W [Yorktown Heights, NY; Takken, Todd [Brewster, NY

2011-01-18

A memory system is disclosed which is comprised of a memory controller and addressable memory devices such as DRAMs. The invention provides a programmable register to control the high vs. low drive state of each bit of a memory system address and control bus during periods of bus inactivity. In this way, termination voltage supply current can be minimized, while permitting selected bus bits to be driven to a required state. This minimizes termination power dissipation while not affecting memory system performance. The technique can be extended to work for other high-speed busses as well.

Does childhood schooling affect old age memory or mental status? Using state schooling laws as natural experiments.

PubMed

Glymour, M M; Kawachi, I; Jencks, C S; Berkman, L F

2008-06-01

The association between schooling and old age cognitive outcomes such as memory disorders is well documented but, because of the threat of reverse causation, controversy persists over whether education affects old age cognition. Changes in state compulsory schooling laws (CSL) are treated as natural experiments (instruments) for estimating the effect of education on memory and mental status among the elderly. Changes in CSL predict changes in average years of schooling completed by children who are affected by the new laws. These educational differences are presumably independent of innate individual characteristics such as IQ. CSL-induced changes in education were used to obtain instrumental variable (IV) estimates of education's effect on memory (n = 10,694) and mental status (n = 9751) for white, non-Hispanic US-born Health and Retirement Survey participants born between 1900 and 1947 who did not attend college. After adjustment for sex, birth year, state of birth and state characteristics, IV estimates of education's effect on memory were large and statistically significant. IV estimates for mental status had very wide confidence intervals, so it was not possible to draw meaningful conclusions about the effect of education on this outcome. Increases in mandatory schooling lead to improvements in performance on memory tests many decades after school completion. These analyses condition on individual states, so differences in memory outcomes associated with CSL changes cannot be attributed to differences between states. Although unmeasured state characteristics that changed contemporaneously with CSL might account for these results, unobserved genetic variation is unlikely to do so.

Does childhood schooling affect old age memory or mental status? Using state schooling laws as natural experiments

PubMed Central

Glymour, M M; Kawachi, I; Jencks, C S; Berkman, L F

2009-01-01

Background The association between schooling and old age cognitive outcomes such as memory disorders is well documented but, because of the threat of reverse causation, controversy persists over whether education affects old age cognition. Changes in state compulsory schooling laws (CSL) are treated as natural experiments (instruments) for estimating the effect of education on memory and mental status among the elderly. Changes in CSL predict changes in average years of schooling completed by children who are affected by the new laws. These educational differences are presumably independent of innate individual characteristics such as IQ. Methods CSL-induced changes in education were used to obtain instrumental variable (IV) estimates of education’s effect on memory (n = 10 694) and mental status (n = 9751) for white, non-Hispanic US-born Health and Retirement Survey participants born between 1900 and 1947 who did not attend college. Results After adjustment for sex, birth year, state of birth and state characteristics, IV estimates of education’s effect on memory were large and statistically significant. IV estimates for mental status had very wide confidence intervals, so it was not possible to draw meaningful conclusions about the effect of education on this outcome. Conclusions Increases in mandatory schooling lead to improvements in performance on memory tests many decades after school completion. These analyses condition on individual states, so differences in memory outcomes associated with CSL changes cannot be attributed to differences between states. Although unmeasured state characteristics that changed contemporaneously with CSL might account for these results, unobserved genetic variation is unlikely to do so. PMID:18477752

Interplay between affect and arousal in recognition memory.

PubMed

Greene, Ciara M; Bahri, Pooja; Soto, David

2010-07-23

Emotional states linked to arousal and mood are known to affect the efficiency of cognitive performance. However, the extent to which memory processes may be affected by arousal, mood or their interaction is poorly understood. Following a study phase of abstract shapes, we altered the emotional state of participants by means of exposure to music that varied in both mood and arousal dimensions, leading to four different emotional states: (i) positive mood-high arousal; (ii) positive mood-low arousal; (iii) negative mood-high arousal; (iv) negative mood-low arousal. Following the emotional induction, participants performed a memory recognition test. Critically, there was an interaction between mood and arousal on recognition performance. Memory was enhanced in the positive mood-high arousal and in the negative mood-low arousal states, relative to the other emotional conditions. Neither mood nor arousal alone but their interaction appears most critical to understanding the emotional enhancement of memory.

Solid state lighting devices and methods with rotary cooling structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplow, Jeffrey P.

Solid state lighting devices and methods for heat dissipation with rotary cooling structures are described. An example solid state lighting device includes a solid state light source, a rotating heat transfer structure in thermal contact with the solid state light source, and a mounting assembly having a stationary portion. The mounting assembly may be rotatably coupled to the heat transfer structure such that at least a portion of the mounting assembly remains stationary while the heat transfer structure is rotating. Examples of methods for dissipating heat from electrical devices, such as solid state lighting sources are also described. Heat dissipationmore » methods may include providing electrical power to a solid state light source mounted to and in thermal contact with a heat transfer structure, and rotating the heat transfer structure through a surrounding medium.« less

Atomic structure and pressure-induced phase transformations in a phase-change alloy

NASA Astrophysics Data System (ADS)

Xu, Ming

Phase-change materials exist in at least two phases under the ambient condition. One is the amorphous state and another is crystalline phase. These two phases have vastly different physical properties, such as electrical conductivity, optical reflectivity, mass density, thermal conductivity, etc. The distinct physical properties and the fast transformation between amorphous and crystalline phases render these materials the ability to store information. For example, the DVD and the Blue-ray discs take advantage of the optical reflectivity contrast, and the newly developed solid-state memories make use of the large conductivity difference. In addition, both the amorphous and crystalline phases in phase-change memories (PCMs) are very stable at room temperature, and they are easy to be scaled up in the production of devices with large storage density. All these features make phase-change materials the ideal candidates for the next-generation memories. Despite of the fast development of these new memory materials in industry, many fundamental physics problems underlying these interesting materials are still not fully resolved. This thesis is aiming at solving some of the key issues in phase-change materials. Most of phase-change materials are composed of Ge-Sb-Te constituents. Among all these Ge-Sb-Te based materials, Ge2Sb2Te5 (GST) has the best performance and has been frequently studied as a prototypical phase-change material. The first and foremost issue is the structure of the two functioning phases. In this thesis, we investigate the unique atomic structure and bonding nature of amorphous GST (a-GST) and crystalline GST ( c-GST), using ab initio tools and X-ray diffraction (XRD) methods. Their local structures and bonding scenarios are then analyzed using electronic structure calculations. In order to gain insight into the fast phase transformation mechanism, we also carried out a series of high-pressure experiments on GST. Several new polymorphs and their transformations have been revealed under high pressure via in situ XRD and in situ electrical resistivity measurements. The mechanisms of the structural and property changes have been uncovered via ab initio molecular dynamics simulations.

Opiate exposure state controls dopamine D3 receptor and cdk5/calcineurin signaling in the basolateral amygdala during reward and withdrawal aversion memory formation.

PubMed

Rosen, Laura G; Rushlow, Walter J; Laviolette, Steven R

2017-10-03

The dopamine (DA) D3 receptor (D3R) is highly expressed in the basolateral nucleus of the amygdala (BLA), a neural region critical for processing opiate-related reward and withdrawal aversion-related memories. Functionally, D3R transmission is linked to downstream Cdk5 and calcineurin signaling, both of which regulate D3R activity states and play critical roles in memory-related synaptic plasticity. Previous evidence links D3R transmission to opiate-related memory processing, however little is known regarding how chronic opiate exposure may alter D3R-dependent memory mechanisms. Using conditioned place preference (CPP) and withdrawal aversion (conditioned place aversion; CPA) procedures in rats, combined with molecular analyses of BLA protein expression, we examined the effects of chronic opiate exposure on the functional role of intra-BLA D3R transmission during the acquisition of opiate reward or withdrawal aversion memories. Remarkably, we report that the state of opiate exposure during behavioural conditioning (opiate-naïve/non-dependent vs. chronically exposed and in withdrawal) controlled the functional role of intra-BLA D3R transmission during the acquisition of both opiate reward memories and withdrawal-aversion associative memories. Thus, whereas intra-BLA D3R blockade had no effect on opiate reward memory formation in the non-dependent state, blockade of intra-BLA D3R transmission prevented the formation of opiate reward and withdrawal aversion memory in the chronically exposed state. This switch in the functional role of D3R transmission corresponded to significant increases in Cdk5 phosphorylation and total expression levels of calcineurin, and a corresponding decrease in intra-BLA D3R expression. Inhibition of either intra-BLA Cdk5 or calcineurin reversed these effects, switching intra-BLA associative memory formation back to a D3R-independent mechanism. Copyright © 2017 Elsevier Inc. All rights reserved.

Autonomous Telemetry Collection for Single-Processor Small Satellites

NASA Technical Reports Server (NTRS)

Speer, Dave

2003-01-01

For the Space Technology 5 mission, which is being developed under NASA's New Millennium Program, a single spacecraft processor will be required to do on-board real-time computations and operations associated with attitude control, up-link and down-link communications, science data processing, solid-state recorder management, power switching and battery charge management, experiment data collection, health and status data collection, etc. Much of the health and status information is in analog form, and each of the analog signals must be routed to the input of an analog-to-digital converter, converted to digital form, and then stored in memory. If the micro-operations of the analog data collection process are implemented in software, the processor may use up a lot of time either waiting for the analog signal to settle, waiting for the analog-to-digital conversion to complete, or servicing a large number of high frequency interrupts. In order to off-load a very busy processor, the collection and digitization of all analog spacecraft health and status data will be done autonomously by a field-programmable gate array that can configure the analog signal chain, control the analog-to-digital converter, and store the converted data in memory.

Early MIMD experience on the CRAY X-MP

NASA Astrophysics Data System (ADS)

Rhoades, Clifford E.; Stevens, K. G.

1985-07-01

This paper describes some early experience with converting four physics simulation programs to the CRAY X-MP, a current Multiple Instruction, Multiple Data (MIMD) computer consisting of two processors each with an architecture similar to that of the CRAY-1. As a multi-processor, the CRAY X-MP together with the high speed Solid-state Storage Device (SSD) in an ideal machine upon which to study MIMD algorithms for solving the equations of mathematical physics because it is fast enough to run real problems. The computer programs used in this study are all FORTRAN versions of original production codes. They range in sophistication from a one-dimensional numerical simulation of collisionless plasma to a two-dimensional hydrodynamics code with heat flow to a couple of three-dimensional fluid dynamics codes with varying degrees of viscous modeling. Early research with a dual processor configuration has shown speed-ups ranging from 1.55 to 1.98. It has been observed that a few simple extensions to FORTRAN allow a typical programmer to achieve a remarkable level of efficiency. These extensions involve the concept of memory local to a concurrent subprogram and memory common to all concurrent subprograms.

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Bailey, Mark; Ho, Fat Duen

2004-01-01

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

A visual LISP program for voxelizing AutoCAD solid models

NASA Astrophysics Data System (ADS)

Marschallinger, Robert; Jandrisevits, Carmen; Zobl, Fritz

2015-01-01

AutoCAD solid models are increasingly recognized in geological and geotechnical 3D modeling. In order to bridge the currently existing gap between AutoCAD solid models and the grid modeling realm, a Visual LISP program is presented that converts AutoCAD solid models into voxel arrays. Acad2Vox voxelizer works on a 3D-model that is made up of arbitrary non-overlapping 3D-solids. After definition of the target voxel array geometry, 3D-solids are scanned at grid positions and properties are streamed to an ASCII output file. Acad2Vox has a novel voxelization strategy that combines a hierarchical reduction of sampling dimensionality with an innovative use of AutoCAD-specific methods for a fast and memory-saving operation. Acad2Vox provides georeferenced, voxelized analogs of 3D design data that can act as regions-of-interest in later geostatistical modeling and simulation. The Supplement includes sample geological solid models with instructions for practical work with Acad2Vox.

Evolution of Archival Storage (from Tape to Memory)

NASA Technical Reports Server (NTRS)

Ramapriyan, Hampapuram K.

2015-01-01

Over the last three decades, there has been a significant evolution in storage technologies supporting archival of remote sensing data. This section provides a brief survey of how these technologies have evolved. Three main technologies are considered - tape, hard disk and solid state disk. Their historical evolution is traced, summarizing how reductions in cost have helped being able to store larger volumes of data on faster media. The cost per GB of media is only one of the considerations in determining the best approach to archival storage. Active archives generally require faster response to user requests for data than permanent archives. The archive costs have to consider facilities and other capital costs, operations costs, software licenses, utilities costs, etc. For meeting requirements in any organization, typically a mix of technologies is needed.

Electrically reversible cracks in an intermetallic film controlled by an electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Z. Q.; Liu, J. H.; Biegalski, M. D.

Cracks in solid-state materials are typically irreversible. We report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 10 8 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks canmore » reach over 10 7 cycles under 10-μs pulses, without catastrophic failure of the film.« less

Evolution of magnetic disk subsystems

NASA Astrophysics Data System (ADS)

Kaneko, Satoru

1994-06-01

The higher recording density of magnetic disk realized today has brought larger storage capacity per unit and smaller form factors. If the required access performance per MB is constant, the performance of large subsystems has to be several times better. This article describes mainly the technology for improving the performance of the magnetic disk subsystems and the prospects of their future evolution. Also considered are 'crosscall pathing' which makes the data transfer channel more effective, 'disk cache' which improves performance coupling with solid state memory technology, and 'RAID' which improves the availability and integrity of disk subsystems by organizing multiple disk drives in a subsystem. As a result, it is concluded that since the performance of the subsystem is dominated by that of the disk cache, maximation of the performance of the disk cache subsystems is very important.

Electrically reversible cracks in an intermetallic film controlled by an electric field

DOE PAGES

Liu, Z. Q.; Liu, J. H.; Biegalski, M. D.; ...

2018-01-03

Cracks in solid-state materials are typically irreversible. We report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 10 8 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks canmore » reach over 10 7 cycles under 10-μs pulses, without catastrophic failure of the film.« less

Solid-state Isotopic Power Source for Computer Memory Chips

NASA Technical Reports Server (NTRS)

Brown, Paul M.

1993-01-01

Recent developments in materials technology now make it possible to fabricate nonthermal thin-film radioisotopic energy converters (REC) with a specific power of 24 W/kg and a 10 year working life at 5 to 10 watts. This creates applications never before possible, such as placing the power supply directly on integrated circuit chips. The efficiency of the REC is about 25 percent which is two to three times greater than the 6 to 8 percent capabilities of current thermoelectric systems. Radio isotopic energy converters have the potential to meet many future space power requirements for a wide variety of applications with less mass, better efficiency, and less total area than other power conversion options. These benefits result in significant dollar savings over the projected mission lifetime.

Wave-particle interactions on the FAST satellite

NASA Technical Reports Server (NTRS)

Temerin, M. A.; Carlson, C. W.; Cattell, C. A.; Ergun, R. E.; Mcfadden, J. P.

1990-01-01

NASA's Fast Auroral Snapshot, or 'FAST' satellite, scheduled for launch in 1993, will investigate the plasma physics of the low altitude auroral zone from a 3500-km apogee polar orbit. FAST will give attention to wave, double-layer, and soliton production processes due to electrons and ions, as well as to wave-wave interactions, and the acceleration of electrons and ions by waves and electric fields. FAST will employ an intelligent data-handling system capacle of data acquisition at rates of up to 1 Mb/sec, in addition to a 1-Gbit solid-state memory. The data need be gathered for only a few minutes during passes through the auroral zone, since the most interesting auroral phenomena occur in such narrow regions as auroral arcs, electrostatic shocks, and superthermal electron bursts.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sidlauskas, D.P.

A new type of biometric identifier which utilizes hand outline measurements made in three dimensions is described. This device uses solid state imaging with no moving parts. The important characteristics of accuracy, speed, user tolerability, small template size, low power, portability and reliability are discussed. A complete stand-alone biometric access control station with sufficient memory for 10,000 users and weighing less than 10 pounds has been built and tested. A test was conducted involving daily use by 112 users over a seven week period during which over 6300 access attempts were made. The single try equal error rate was foundmore » to be 0.4%. There were no false rejects when three tries were allowed before access was denied. Defeat with an artifact is difficult because the hand must be copied in all three dimensions.« less

Application of phase-change materials in memory taxonomy.

PubMed

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

Two dimensional modeling of elastic wave propagation in solids containing cracks with rough surfaces and friction - Part II: Numerical implementation.

PubMed

Delrue, Steven; Aleshin, Vladislav; Truyaert, Kevin; Bou Matar, Olivier; Van Den Abeele, Koen

2018-01-01

Our study aims at the creation of a numerical toolbox that describes wave propagation in samples containing internal contacts (e.g. cracks, delaminations, debondings, imperfect intergranular joints) of known geometry with postulated contact interaction laws including friction. The code consists of two entities: the contact model and the solid mechanics module. Part I of the paper concerns an in-depth description of a constitutive model for realistic contacts or cracks that takes into account the roughness of the contact faces and the associated effects of friction and hysteresis. In the crack model, three different contact states can be recognized: contact loss, total sliding and partial slip. Normal (clapping) interactions between the crack faces are implemented using a quadratic stress-displacement relation, whereas tangential (friction) interactions were introduced using the Coulomb friction law for the total sliding case, and the Method of Memory Diagrams (MMD) in case of partial slip. In the present part of the paper, we integrate the developed crack model into finite element software in order to simulate elastic wave propagation in a solid material containing internal contacts or cracks. We therefore implemented the comprehensive crack model in MATLAB® and introduced it in the Structural Mechanics Module of COMSOL Multiphysics®. The potential of the approach for ultrasound based inspection of solids with cracks showing acoustic nonlinearity is demonstrated by means of an example of shear wave propagation in an aluminum sample containing a single crack with rough surfaces and friction. Copyright © 2017 Elsevier B.V. All rights reserved.

A Steady State Visually Evoked Potential Investigation of Memory and Ageing

ERIC Educational Resources Information Center

Macpherson, Helen; Pipingas, Andrew; Silberstein, Richard

2009-01-01

Old age is generally accompanied by a decline in memory performance. Specifically, neuroimaging and electrophysiological studies have revealed that there are age-related changes in the neural correlates of episodic and working memory. This study investigated age-associated changes in the steady state visually evoked potential (SSVEP) amplitude and…

Arbitrary unitary transformations on optical states using a quantum memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Geoff T.; Pinel, Olivier; Hosseini, Mahdi

2014-12-04

We show that optical memories arranged along an optical path can perform arbitrary unitary transformations on frequency domain optical states. The protocol offers favourable scaling and can be used with any quantum memory that uses an off-resonant Raman transition to reversibly transfer optical information to an atomic spin coherence.

Feasibility study of molecular memory device based on DNA using methylation to store information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Al-Dirini, Feras; Center for Neural Engineering

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibriummore » Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.« less

Architecture and method for a burst buffer using flash technology

DOEpatents

Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing-bung

2016-03-15

A parallel supercomputing cluster includes compute nodes interconnected in a mesh of data links for executing an MPI job, and solid-state storage nodes each linked to a respective group of the compute nodes for receiving checkpoint data from the respective compute nodes, and magnetic disk storage linked to each of the solid-state storage nodes for asynchronous migration of the checkpoint data from the solid-state storage nodes to the magnetic disk storage. Each solid-state storage node presents a file system interface to the MPI job, and multiple MPI processes of the MPI job write the checkpoint data to a shared file in the solid-state storage in a strided fashion, and the solid-state storage node asynchronously migrates the checkpoint data from the shared file in the solid-state storage to the magnetic disk storage and writes the checkpoint data to the magnetic disk storage in a sequential fashion.

Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

PubMed

Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

2016-09-19

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Serial-to-parallel color-TV converter

NASA Technical Reports Server (NTRS)

Doak, T. W.; Merwin, R. B.; Zuckswert, S. E.; Sepper, W.

1976-01-01

Solid analog-to-digital converter eliminates flicker and problems with time base stability and gain variation in sequential color TV cameras. Device includes 3-bit delta modulator; two-field memory; timing, switching, and sync network; and three 3-bit delta demodulators

The reduction of adult neurogenesis in depression impairs the retrieval of new as well as remote episodic memory

PubMed Central

Fang, Jing; Demic, Selver; Cheng, Sen

2018-01-01

Major depressive disorder (MDD) is associated with an impairment of episodic memory, but the mechanisms underlying this deficit remain unclear. Animal models of MDD find impaired adult neurogenesis (AN) in the dentate gyrus (DG), and AN in DG has been suggested to play a critical role in reducing the interference between overlapping memories through pattern separation. Here, we study the effect of reduced AN in MDD on the accuracy of episodic memory using computational modeling. We focus on how memory is affected when periods with a normal rate of AN (asymptomatic states) alternate with periods with a low rate (depressive episodes), which has never been studied before. Also, unlike previous models of adult neurogenesis, which consider memories as static patterns, we model episodic memory as sequences of neural activity patterns. In our model, AN adds additional random components to the memory patterns, which results in the decorrelation of similar patterns. Consistent with previous studies, higher rates of AN lead to higher memory accuracy in our model, which implies that memories stored in the depressive state are impaired. Intriguingly, our model makes the novel prediction that memories stored in an earlier asymptomatic state are also impaired by a later depressive episode. This retrograde effect exacerbates with increased duration of the depressive episode. Finally, pattern separation at the sensory processing stage does not improve, but rather worsens, the accuracy of episodic memory retrieval, suggesting an explanation for why AN is found in brain areas serving memory rather than sensory function. In conclusion, while cognitive retrieval biases might contribute to episodic memory deficits in MDD, our model suggests a mechanistic explanation that affects all episodic memories, regardless of emotional relevance. PMID:29879169

The reduction of adult neurogenesis in depression impairs the retrieval of new as well as remote episodic memory.

PubMed

Fang, Jing; Demic, Selver; Cheng, Sen

2018-01-01

Major depressive disorder (MDD) is associated with an impairment of episodic memory, but the mechanisms underlying this deficit remain unclear. Animal models of MDD find impaired adult neurogenesis (AN) in the dentate gyrus (DG), and AN in DG has been suggested to play a critical role in reducing the interference between overlapping memories through pattern separation. Here, we study the effect of reduced AN in MDD on the accuracy of episodic memory using computational modeling. We focus on how memory is affected when periods with a normal rate of AN (asymptomatic states) alternate with periods with a low rate (depressive episodes), which has never been studied before. Also, unlike previous models of adult neurogenesis, which consider memories as static patterns, we model episodic memory as sequences of neural activity patterns. In our model, AN adds additional random components to the memory patterns, which results in the decorrelation of similar patterns. Consistent with previous studies, higher rates of AN lead to higher memory accuracy in our model, which implies that memories stored in the depressive state are impaired. Intriguingly, our model makes the novel prediction that memories stored in an earlier asymptomatic state are also impaired by a later depressive episode. This retrograde effect exacerbates with increased duration of the depressive episode. Finally, pattern separation at the sensory processing stage does not improve, but rather worsens, the accuracy of episodic memory retrieval, suggesting an explanation for why AN is found in brain areas serving memory rather than sensory function. In conclusion, while cognitive retrieval biases might contribute to episodic memory deficits in MDD, our model suggests a mechanistic explanation that affects all episodic memories, regardless of emotional relevance.

Non-Markovianity-assisted high-fidelity Deutsch-Jozsa algorithm in diamond

NASA Astrophysics Data System (ADS)

Dong, Yang; Zheng, Yu; Li, Shen; Li, Cong-Cong; Chen, Xiang-Dong; Guo, Guang-Can; Sun, Fang-Wen

2018-01-01

The memory effects in non-Markovian quantum dynamics can induce the revival of quantum coherence, which is believed to provide important physical resources for quantum information processing (QIP). However, no real quantum algorithms have been demonstrated with the help of such memory effects. Here, we experimentally implemented a non-Markovianity-assisted high-fidelity refined Deutsch-Jozsa algorithm (RDJA) with a solid spin in diamond. The memory effects can induce pronounced non-monotonic variations in the RDJA results, which were confirmed to follow a non-Markovian quantum process by measuring the non-Markovianity of the spin system. By applying the memory effects as physical resources with the assistance of dynamical decoupling, the probability of success of RDJA was elevated above 97% in the open quantum system. This study not only demonstrates that the non-Markovianity is an important physical resource but also presents a feasible way to employ this physical resource. It will stimulate the application of the memory effects in non-Markovian quantum dynamics to improve the performance of practical QIP.

Mood state and cerebral metabolism in persons with age-associated memory impairment.

PubMed

Cherrier, M M; Small, G W; Komo, S; La Rue, A

1997-12-30

People undergoing medical procedures sometimes experience feelings that may influence the results. In this study, we explore the relationship between changes in mood state self-ratings and cerebral glucose metabolism during positron emission tomography (PET) in persons with age-associated memory impairment (mean age 59.4 +/- 9.8 years). Brain regions of interest involved in both mood and memory were examined. Mood ratings of increased boredom correlated significantly with mesial temporal and parietal asymmetry and decreased parietal metabolism. Mood ratings of increased fatigue correlated with basal ganglia asymmetry and the right basal ganglia and left mesial temporal metabolism. These findings suggest that subjective mood state changes during PET may influence metabolism in brain regions implicated in emotion and memory function in people with age-related memory complaints.

David Adler Lectureship Award in the Field of Materials Physics: Racetrack Memory - a high-performance, storage class memory using magnetic domain-walls manipulated by current

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2012-02-01

Racetrack Memory is a novel high-performance, non-volatile storage-class memory in which magnetic domains are used to store information in a ``magnetic racetrack'' [1]. The magnetic racetrack promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability: a ``hard disk on a chip''. The magnetic racetrack is comprised of a magnetic nanowire in which a series of magnetic domain walls are shifted to and fro along the wire using nanosecond-long pulses of spin polarized current [2]. We have demonstrated the underlying physics that makes Racetrack Memory possible [3,4] and all the basic functions - creation, and manipulation of a train of domain walls and their detection. The physics underlying the current induced dynamics of domain walls will also be discussed. In particular, we show that the domain walls respond as if they have mass, leading to significant inertial driven motion of the domain walls over long times after the current pulses are switched off [3]. We also demonstrate that in perpendicularly magnetized nanowires there are two independent current driving mechanisms: one derived from bulk spin-dependent scattering that drives the domain walls in the direction of electron flow, and a second interfacial mechanism that can drive the domain walls either along or against the electron flow, depending on subtle changes in the nanowire structure. Finally, we demonstrate thermally induced spin currents are large enough that they can be used to manipulate domain walls. [4pt] [1] S.S.P. Parkin, US Patent 6,834,005 (2004); S.S.P. Parkin et al., Science 320, 190 (2008); S.S.P. Parkin, Scientific American (June 2009). [0pt] [2] M. Hayashi, L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 320, 209 (2008). [0pt] [3] L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 330, 1810 (2010). [0pt] [4] X. Jiang et al. Nat. Comm. 1:25 (2010) and Nano Lett. 11, 96 (2011).

Methods for Assessment of Memory Reactivation.

PubMed

Liu, Shizhao; Grosmark, Andres D; Chen, Zhe

2018-04-13

It has been suggested that reactivation of previously acquired experiences or stored information in declarative memories in the hippocampus and neocortex contributes to memory consolidation and learning. Understanding memory consolidation depends crucially on the development of robust statistical methods for assessing memory reactivation. To date, several statistical methods have seen established for assessing memory reactivation based on bursts of ensemble neural spike activity during offline states. Using population-decoding methods, we propose a new statistical metric, the weighted distance correlation, to assess hippocampal memory reactivation (i.e., spatial memory replay) during quiet wakefulness and slow-wave sleep. The new metric can be combined with an unsupervised population decoding analysis, which is invariant to latent state labeling and allows us to detect statistical dependency beyond linearity in memory traces. We validate the new metric using two rat hippocampal recordings in spatial navigation tasks. Our proposed analysis framework may have a broader impact on assessing memory reactivations in other brain regions under different behavioral tasks.

Experimentally-induced dissociation impairs visual memory.

PubMed

Brewin, Chris R; Mersaditabari, Niloufar

2013-12-01

Dissociation is a phenomenon common in a number of psychological disorders and has been frequently suggested to impair memory for traumatic events. In this study we explored the effects of dissociation on visual memory. A dissociative state was induced experimentally using a mirror-gazing task and its short-term effects on memory performance were investigated. Sixty healthy individuals took part in the experiment. Induced dissociation impaired visual memory performance relative to a control condition; however, the degree of dissociation was not associated with lower memory scores in the experimental group. The results have theoretical and practical implications for individuals who experience frequent dissociative states such as patients with posttraumatic stress disorder (PTSD). Copyright © 2013 Elsevier Inc. All rights reserved.

Default mode network connectivity indicates episodic memory capacity in mesial temporal lobe epilepsy.

PubMed

McCormick, Cornelia; Quraan, Maher; Cohn, Melanie; Valiante, Taufik A; McAndrews, Mary Pat

2013-05-01

The clinical relevance of resting state functional connectivity in neurologic disorders, including mesial temporal lobe epilepsy (mTLE), remains unclear. This study investigated how connectivity in the default mode network changes with unilateral damage to one of its nodes, the hippocampus (HC), and how such connectivity can be exploited clinically to characterize memory deficits and indicate postsurgical memory change. Functional magnetic resonance imaging (fMRI) resting state scans and neuropsychological memory assessments (Warrington Recognition Tests for Words and Faces) were performed on 19 healthy controls, 20 patients with right mTLE, and 18 patients with left mTLE. In addition, postsurgical fMRI resting state and memory change (postsurgical memory performance-presurgical memory performance) data were available for half of these patients. Patients with mTLE showed reduced connectivity from the posterior cingulate cortex (PCC) to the epileptogenic HC and increased PCC connectivity to the contralateral HC. Stronger PCC connectivity to the epileptogenic HC was associated with better presurgical memory and with greater postsurgical memory decline. Stronger PCC connectivity to the contralateral HC was associated with less postsurgical memory decline. Following surgery, PCC connectivity to the remaining HC increased from presurgical values and showed enhanced correlation with postsurgical memory function. It is notable that this index was superior to others (hippocampal volume, preoperative memory scores) in explaining variance in memory change following surgery. Our results demonstrate the striking clinical significance of the brain's intrinsic connectivity in evaluating cognitive capacity and indicating the potential of postsurgical cognitive morbidity in patients with mTLE. Wiley Periodicals, Inc. © 2013 International League Against Epilepsy.

Variable-Resistivity Material For Memory Circuits

NASA Technical Reports Server (NTRS)

Nagasubramanian, Ganesan; Distefano, Salvador; Moacanin, Jovan

1989-01-01

Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

Review—Practical Challenges Hindering the Development of Solid State Li Ion Batteries

DOE PAGES

Kerman, Kian; Luntz, Alan; Viswanathan, Venkatasubramanian; ...

2017-06-09

Solid state electrolyte systems boasting Li+ conductivity of >10 mS cm -1 at room temperature have opened the potential for developing a solid state battery with power and energy densities that are competitive with conventional liquid electrolyte systems. The primary focus of this review is twofold. First, differences in Li penetration resistance in solid state systems are discussed, and kinetic limitations of the solid state interface are highlighted. Second, technological challenges associated with processing such systems in relevant form factors are elucidated, and architectures needed for cell level devices in the context of product development are reviewed. Specific research vectorsmore » that provide high value to advancing solid state batteries are outlined and discussed.« less

Solid state division progress report, period ending February 29, 1980

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1980-09-01

Research is reported concerning theoretical solid state physics; surface and near-surface properties of solids; defects in solids; transport properties of solids; neutron scattering; crystal growth and characterization; and isotope research materials.

Synecdochic Memory at the United States Holocaust Memorial Museum

ERIC Educational Resources Information Center

Bernard-Donals, Michael

2012-01-01

On the third floor of the United States Holocaust Memorial Museum (USHMM), in Washington, D.C., inside a glass case, lie thousands of shoes. Old and mismatched, moldering after sixty years, they are what remains of countless Jews who were told to disrobe and who were subsequently murdered at Majdanek, Poland, during the final years of the…

Confident failures: Lapses of working memory reveal a metacognitive blind spot.

PubMed

Adam, Kirsten C S; Vogel, Edward K

2017-07-01

Working memory performance fluctuates dramatically from trial to trial. On many trials, performance is no better than chance. Here, we assessed participants' awareness of working memory failures. We used a whole-report visual working memory task to quantify both trial-by-trial performance and trial-by-trial subjective ratings of inattention to the task. In Experiment 1 (N = 41), participants were probed for task-unrelated thoughts immediately following 20% of trials. In Experiment 2 (N = 30), participants gave a rating of their attentional state following 25% of trials. Finally, in Experiments 3a (N = 44) and 3b (N = 34), participants reported confidence of every response using a simple mouse-click judgment. Attention-state ratings and off-task thoughts predicted the number of items correctly identified on each trial, replicating previous findings that subjective measures of attention state predict working memory performance. However, participants correctly identified failures on only around 28% of failure trials. Across experiments, participants' metacognitive judgments reliably predicted variation in working memory performance but consistently and severely underestimated the extent of failures. Further, individual differences in metacognitive accuracy correlated with overall working memory performance, suggesting that metacognitive monitoring may be key to working memory success.

A multilevel nonvolatile magnetoelectric memory

NASA Astrophysics Data System (ADS)

Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

2016-09-01

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

Multi-bit dark state memory: Double quantum dot as an electronic quantum memory

NASA Astrophysics Data System (ADS)

Aharon, Eran; Pozner, Roni; Lifshitz, Efrat; Peskin, Uri

2016-12-01

Quantum dot clusters enable the creation of dark states which preserve electrons or holes in a coherent superposition of dot states for a long time. Various quantum logic devices can be envisioned to arise from the possibility of storing such trapped particles for future release on demand. In this work, we consider a double quantum dot memory device, which enables the preservation of a coherent state to be released as multiple classical bits. Our unique device architecture uses an external gating for storing (writing) the coherent state and for retrieving (reading) the classical bits, in addition to exploiting an internal gating effect for the preservation of the coherent state.

Stochastic switching of TiO2-based memristive devices with identical initial memory states

PubMed Central

2014-01-01

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution. PMID:24994953

Real-time state estimation in a flight simulator using fNIRS.

PubMed

Gateau, Thibault; Durantin, Gautier; Lancelot, Francois; Scannella, Sebastien; Dehais, Frederic

2015-01-01

Working memory is a key executive function for flying an aircraft. This function is particularly critical when pilots have to recall series of air traffic control instructions. However, working memory limitations may jeopardize flight safety. Since the functional near-infrared spectroscopy (fNIRS) method seems promising for assessing working memory load, our objective is to implement an on-line fNIRS-based inference system that integrates two complementary estimators. The first estimator is a real-time state estimation MACD-based algorithm dedicated to identifying the pilot's instantaneous mental state (not-on-task vs. on-task). It does not require a calibration process to perform its estimation. The second estimator is an on-line SVM-based classifier that is able to discriminate task difficulty (low working memory load vs. high working memory load). These two estimators were tested with 19 pilots who were placed in a realistic flight simulator and were asked to recall air traffic control instructions. We found that the estimated pilot's mental state matched significantly better than chance with the pilot's real state (62% global accuracy, 58% specificity, and 72% sensitivity). The second estimator, dedicated to assessing single trial working memory loads, led to 80% classification accuracy, 72% specificity, and 89% sensitivity. These two estimators establish reusable blocks for further fNIRS-based passive brain computer interface development.

The CD8+ memory T-cell state of readiness is actively maintained and reversible

PubMed Central

Allam, Atef; Conze, Dietrich B.; Giardino Torchia, Maria Letizia; Munitic, Ivana; Yagita, Hideo; Sowell, Ryan T.; Marzo, Amanda L.

2009-01-01

The ability of the adaptive immune system to respond rapidly and robustly upon repeated antigen exposure is known as immunologic memory, and it is thought that acquisition of memory T-cell function is an irreversible differentiation event. In this study, we report that many phenotypic and functional characteristics of antigen-specific CD8 memory T cells are lost when they are deprived of contact with dendritic cells. Under these circumstances, memory T cells reverted from G1 to the G0 cell-cycle state and responded to stimulation like naive T cells, as assessed by proliferation, dependence upon costimulation, and interferon-γ production, without losing cell surface markers associated with memory. The memory state was maintained by signaling via members of the tumor necrosis factor receptor superfamily, CD27 and 4-1BB. Foxo1, a transcription factor involved in T-cell quiescence, was reduced in memory cells, and stimulation of naive CD8 cells via CD27 caused Foxo1 to be phosphorylated and emigrate from the nucleus in a phosphatidylinositol-3 kinase–dependent manner. Consistent with these results, maintenance of G1 in vivo was compromised in antigen-specific memory T cells in vesicular stomatitis virus-infected CD27-deficient mice. Therefore, sustaining the functional phenotype of T memory cells requires active signaling and maintenance. PMID:19617575

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Capacity of a quantum memory channel correlated by matrix product states

NASA Astrophysics Data System (ADS)

Mulherkar, Jaideep; Sunitha, V.

2018-04-01

We study the capacity of a quantum channel where channel acts like controlled phase gate with the control being provided by a one-dimensional quantum spin chain environment. Due to the correlations in the spin chain, we get a quantum channel with memory. We derive formulas for the quantum capacity of this channel when the spin state is a matrix product state. Particularly, we derive exact formulas for the capacity of the quantum memory channel when the environment state is the ground state of the AKLT model and the Majumdar-Ghosh model. We find that the behavior of the capacity for the range of the parameters is analytic.

76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-07

... Access Memory and Nand Flash Memory Devices and Products Containing Same; Notice of Institution of... importation, and the sale within the United States after importation of certain dynamic random access memory and NAND flash memory devices and products containing same by reason of infringement of certain claims...

Living Memorials: Understanding the Social Meanings of Community-Based Memorials to September 11, 2001

Treesearch

Erika S. Svendsen; Lindsay K. Campbell

2010-01-01

Living memorials are landscaped spaces created by people to memorialize individuals, places, and events. Hundreds of stewardship groups across the United States of America created living memorials in response to the September 11, 2001 terrorist attacks. This study sought to understand how stewards value, use, and talk about their living, community-based memorials....

Acute stress negatively affects object recognition early memory consolidation and memory retrieval unrelated to state-dependency.

PubMed

Nelissen, Ellis; Prickaerts, Jos; Blokland, Arjan

2018-06-01

It is well known that stress affects memory performance. However, there still appears to be inconstancy in literature about how acute stress affects the different stages of memory: acquisition, consolidation and retrieval. In this study, we exposed rats to acute stress and measured the effect on memory performance in the object recognition task as a measure for episodic memory. Stress was induced 30 min prior to the learning phase to affect acquisition, directly after the learning phase to affect consolidation, or 30 min before the retrieval phase to affect retrieval. Additionally, we induced stress both 30 min prior to the learning phase and 30 min prior to the retrieval phase to test whether the effects were related to state-dependency. As expected, we found that acute stress did not affect acquisition but had a negative impact on retrieval. To our knowledge, we are the first to show that early consolidation was negatively affected by acute stress. We also show that stress does not have a state-dependent effect on memory. Copyright © 2018 Elsevier B.V. All rights reserved.

Affect influences false memories at encoding: evidence from recognition data.

PubMed

Storbeck, Justin; Clore, Gerald L

2011-08-01

Memory is susceptible to illusions in the form of false memories. Prior research found, however, that sad moods reduce false memories. The current experiment had two goals: (1) to determine whether affect influences retrieval processes, and (2) to determine whether affect influences the strength and the persistence of false memories. Happy or sad moods were induced either before or after learning word lists designed to produce false memories. Control groups did not experience a mood induction. We found that sad moods reduced false memories only when induced before learning. Signal detection analyses confirmed that sad moods induced prior to learning reduced activation of nonpresented critical lures suggesting that they came to mind less often. Affective states, however, did not influence retrieval effects. We conclude that negative affective states promote item-specific processing, which reduces false memories in a similar way as using an explicitly guided cognitive control strategy. 2011 APA, all rights reserved

Affect Influences False Memories at Encoding: Evidence from Recognition Data

PubMed Central

Storbeck, Justin; Clore, Gerald L.

2014-01-01

Memory is susceptible to illusions in the form of false memories. Prior research found, however, that sad moods reduce false memories. The current experiment had two goals: (1) to determine whether affect influences retrieval processes, and (2) to determine whether affect influences the strength and the persistence of false memories. Happy or sad moods were induced either before or after learning word lists designed to produce false memories. Control groups did not experience a mood induction. We found that sad moods reduced false memories only when induced before learning. Signal detection analyses confirmed that sad moods induced prior to learning reduced activation of nonpresented critical lures suggesting that they came to mind less often. Affective states, however, did not influence retrieval effects. We conclude that negative affective states promote item-specific processing, which reduces false memories in a similar way as using an explicitly guided cognitive control strategy. PMID:21517165

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Stochastic memory: getting memory out of noise

NASA Astrophysics Data System (ADS)

Stotland, Alexander; di Ventra, Massimiliano

2011-03-01

Memory circuit elements, namely memristors, memcapacitors and meminductors, can store information without the need of a power source. These systems are generally defined in terms of deterministic equations of motion for the state variables that are responsible for memory. However, in real systems noise sources can never be eliminated completely. One would then expect noise to be detrimental for memory. Here, we show that under specific conditions on the noise intensity memory can actually be enhanced. We illustrate this phenomenon using a physical model of a memristor in which the addition of white noise into the state variable equation improves the memory and helps the operation of the system. We discuss under which conditions this effect can be realized experimentally, discuss its implications on existing memory systems discussed in the literature, and also analyze the effects of colored noise. Work supported in part by NSF.

Solid-state modeling of the terahertz spectrum of the high explosive HMX.

PubMed

Allis, Damian G; Prokhorova, Darya A; Korter, Timothy M

2006-02-09

The experimental solid-state terahertz (THz) spectrum (3-120 cm(-1)) of the beta-crystal form of the high explosive octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX) has been analyzed using solid-state density functional theory calculations. Various density functionals (both generalized gradient approximation and local density approximation) are compared in terms of their abilities to reproduce the experimentally observed solid-state structure and low-frequency vibrational motions. Good-to-excellent agreement between solid-state theory and experiment can be achieved in the THz region where isolated-molecule calculations fail to reproduce the observed spectral features, demonstrating a clear limitation of using isolated-molecule calculations for the assignment of THz frequency motions in molecular solids. The deficiency of isolated-molecule calculations is traced to modification of the molecular structure in the solid state through crystal packing effects and the formation of weak C-H...O hydrogen bonds.

Optofluidic devices with integrated solid-state nanopores

PubMed Central

Hawkins, Aaron R.; Schmidt, Holger

2016-01-01

This review (with 90 refs.) covers the state of the art in optofluidic devices with integrated solid-state nanopores for use in detection and sensing. Following an introduction into principles of optofluidics and solid-state nanopore technology, we discuss features of solid-state nanopore based assays using optofluidics. This includes the incorporation of solid-state nanopores into optofluidic platforms based on liquid-core anti-resonant reflecting optical waveguides (ARROWs), methods for their fabrication, aspects of single particle detection and particle manipulation. We then describe the new functionalities provided by solid-state nanopores integrated into optofluidic chips, in particular acting as smart gates for correlated electro-optical detection and discrimination of nanoparticles. This enables the identification of viruses and λ-DNA, particle trajectory simulations, enhancing sensitivity by tuning the shape of nanopores. The review concludes with a summary and an outlook. PMID:27046940

How Does Knowledge Promote Memory? The Distinctiveness Theory of Skilled Memory

ERIC Educational Resources Information Center

Rawson, Katherine A.; Van Overschelde, James P.

2008-01-01

The robust effects of knowledge on memory for domain-relevant information reported in previous research have largely been attributed to improved organizational processing. The present research proposes the distinctiveness theory of skilled memory, which states that knowledge improves memory not only through improved organizational processing but…

75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-25

... Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of... the sale within the United States after importation of certain dynamic random access memory semiconductors and products containing same, including memory modules, by reason of infringement of certain...

Unveiling the Switching Riddle of Silver Tetracyanoquinodimethane Towards Novel Planar Single-Crystalline Electrochemical Metallization Memories.

PubMed

Yang, Fangxu; Zhao, Qiang; Xu, Chunhui; Zou, Ye; Dong, Huanli; Zheng, Yonggang; Hu, Wenping

2016-09-01

The switching riddle of AgTCNQ is shown to be caused by the solid electrolyte mechanism. Both factors of bulk phase change and contact issue play key roles in the efficient work of the devices. An effective strategy is developed to locate the formation/disruption of Ag conductive filaments using the planar asymmetric configuration of Au/AgTCNQ/AlOx /Al. These novel electrochemical metallization memories demonstrate many promising properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

First principles study on electrochemical and chemical stability of solid electrolyte–electrode interfaces in all-solid-state Li-ion batteries

DOE PAGES

Zhu, Yizhou; He, Xingfeng; Mo, Yifei

2015-12-11

All-solid-state Li-ion batteries based on ceramic solid electrolyte materials are a promising next-generation energy storage technology with high energy density and enhanced cycle life. The poor interfacial conductance is one of the key limitations in enabling all-solid-state Li-ion batteries. However, the origin of this poor conductance has not been understood, and there is limited knowledge about the solid electrolyte–electrode interfaces in all-solid-state Li-ion batteries. In this paper, we performed first principles calculations to evaluate the thermodynamics of the interfaces between solid electrolyte and electrode materials and to identify the chemical and electrochemical stabilities of these interfaces. Our computation results revealmore » that many solid electrolyte–electrode interfaces have limited chemical and electrochemical stability, and that the formation of interphase layers is thermodynamically favorable at these interfaces. These formed interphase layers with different properties significantly affect the electrochemical performance of all-solid-state Li-ion batteries. The mechanisms of applying interfacial coating layers to stabilize the interface and to reduce interfacial resistance are illustrated by our computation. This study demonstrates a computational scheme to evaluate the chemical and electrochemical stability of heterogeneous solid interfaces. Finally, the enhanced understanding of the interfacial phenomena provides the strategies of interface engineering to improve performances of all-solid-state Li-ion batteries.« less

Selective effects of emotion on the phenomenal characteristics of autobiographical memories.

PubMed

Schaefer, Alexandre; Philippot, Pierre

2005-02-01

The present study investigates the emotional determinants of the phenomenal characteristics of autobiographical memories. A total of 84 participants completed the Memory Characteristics Questionnaire (MCQ, Johnson, Foley, Suengas, & Raye, 1988) after retrieving and orally describing a negative, a positive, and a neutral autobiographical memory. In addition, self-report and physiological measures of emotional state at retrieval were recorded. Results suggest that recall of perceptual, sensory, and semantic elements is better for emotional memories than for neutral ones. This difference is not significant for contextual and temporal aspects, suggesting that emotional memories are more vivid but no more specific than are neutral ones. In addition, positive memories yielded higher MCQ ratings than did negative memories for sensory, temporal, and contextual aspects. Finally, correlations suggest a positive relation between emotional state at retrieval and level of phenomenal detail of retrieved memories. Results are interpreted in terms of multilevel models of emotion and of Conway and Pleydell-Pearce's (2000) model.

Affect influences feature binding in memory: Trading between richness and strength of memory representations.

PubMed

Spachtholz, Philipp; Kuhbandner, Christof; Pekrun, Reinhard

2016-10-01

Research has shown that long-term memory representations of objects are formed as a natural product of perception even without any intentional memorization. It is not known, however, how rich these representations are in terms of the number of bound object features. In particular, because feature binding rests on resource-limited processes, there may be a context-dependent trade-off between the quantity of stored features and their memory strength. The authors examined whether affective state may bring about such a trade-off. Participants incidentally encoded pictures of real-world objects while experiencing positive or negative affect, and the authors later measured memory for 2 features. Results showed that participants traded between richness and strength of memory representations as a function of affect, with positive affect tuning memory formation toward richness and negative affect tuning memory formation toward strength. These findings demonstrate that memory binding is a flexible process that is modulated by affective state. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Application of phase-change materials in memory taxonomy

PubMed Central

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects. PMID:28740557

An extrapolation scheme for solid-state NMR chemical shift calculations

NASA Astrophysics Data System (ADS)

Nakajima, Takahito

2017-06-01

Conventional quantum chemical and solid-state physical approaches include several problems to accurately calculate solid-state nuclear magnetic resonance (NMR) properties. We propose a reliable computational scheme for solid-state NMR chemical shifts using an extrapolation scheme that retains the advantages of these approaches but reduces their disadvantages. Our scheme can satisfactorily yield solid-state NMR magnetic shielding constants. The estimated values have only a small dependence on the low-level density functional theory calculation with the extrapolation scheme. Thus, our approach is efficient because the rough calculation can be performed in the extrapolation scheme.

Mechanical memory

DOEpatents

Gilkey, Jeffrey C [Albuquerque, NM; Duesterhaus, Michelle A [Albuquerque, NM; Peter, Frank J [Albuquerque, NM; Renn, Rosemarie A [Alburquerque, NM; Baker, Michael S [Albuquerque, NM

2006-08-15

A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

Mechanical memory

DOEpatents

Gilkey, Jeffrey C [Albuquerque, NM; Duesterhaus, Michelle A [Albuquerque, NM; Peter, Frank J [Albuquerque, NM; Renn, Rosemarie A [Albuquerque, NM; Baker, Michael S [Albuquerque, NM

2006-05-16

A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

Solitonic Josephson-based meminductive systems

NASA Astrophysics Data System (ADS)

Guarcello, Claudio; Solinas, Paolo; di Ventra, Massimiliano; Giazotto, Francesco

2017-04-01

Memristors, memcapacitors, and meminductors represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, is their distinctive fingerprint. This feature endows them with the ability to store and process information on the same physical location, a property that is expected to benefit many applications ranging from unconventional computing to adaptive electronics to robotics. Therefore, it is important to find appropriate memory elements that combine a wide range of memory states, long memory retention times, and protection against unavoidable noise. Although several physical systems belong to the general class of memelements, few of them combine these important physical features in a single component. Here, we demonstrate theoretically a superconducting memory based on solitonic long Josephson junctions. Moreover, since solitons are at the core of its operation, this system provides an intrinsic topological protection against external perturbations. We show that the Josephson critical current behaves hysteretically as an external magnetic field is properly swept. Accordingly, long Josephson junctions can be used as multi-state memories, with a controllable number of available states, and in other emerging areas such as memcomputing, i.e., computing directly in/by the memory.

Honoring our donors: a survey of memorial ceremonies in United States anatomy programs.

PubMed

Jones, Trahern W; Lachman, Nirusha; Pawlina, Wojciech

2014-01-01

Many anatomy programs that incorporate dissection of donated human bodies hold memorial ceremonies of gratitude towards body donors. The content of these ceremonies may include learners' reflections on mortality, respect, altruism, and personal growth told through various humanities modalities. The task of planning is usually student- and faculty-led with participation from other health care students. Objective information on current memorial ceremonies for body donors in anatomy programs in the United States appears to be lacking. The number of programs in the United States that currently plan these memorial ceremonies and information on trends in programs undertaking such ceremonies remain unknown. Gross anatomy program directors throughout the United States were contacted and asked to respond to a voluntary questionnaire on memorial ceremonies held at their institution. The results (response rate 68.2%) indicated that a majority of human anatomy programs (95.5%) hold memorial ceremonies. These ceremonies are, for the most part, student-driven and nondenominational or secular in nature. Participants heavily rely upon speech, music, poetry, and written essays, with a small inclusion of other humanities modalities, such as dance or visual art, to explore a variety of themes during these ceremonies. © 2013 American Association of Anatomists.

Inhibition of Protein Synthesis but Not ß-Adrenergic Receptors Blocks Reconsolidation of a Cocaine-Associated Cue Memory

ERIC Educational Resources Information Center

Dunbar, Amber B.; Taylor, Jane R.

2016-01-01

Previously consolidated memories have the potential to enter a state of lability upon memory recall, during which time the memory can be altered before undergoing an additional consolidation-like process and being stored again as a long-term memory. Blocking reconsolidation of aberrant memories has been proposed as a potential treatment for…

Angelica gigas Nakai and Soluplus-Based Solid Formulations Prepared by Hot-Melting Extrusion: Oral Absorption Enhancing and Memory Ameliorating Effects

PubMed Central

Piao, Jingpei; Lee, Jae-Young; Weon, Jin Bae; Ma, Choong Je; Ko, Hyun-Jeong; Kim, Dae-Duk; Kang, Wie-Soo; Cho, Hyun-Jong

2015-01-01

Oral solid formulations based on Angelica gigas Nakai (AGN) and Soluplus were prepared by the hot-melting extrusion (HME) method. AGN was pulverized into coarse and ultrafine particles, and their particle size and morphology were investigated. Ultrafine AGN particles were used in the HME process with high shear to produce AGN-based formulations. In simulated gastrointestinal fluids (pH 1.2 and pH 6.8) and water, significantly higher amounts of the major active components of AGN, decursin (D) and decursinol angelate (DA), were extracted from the HME-processed AGN/Soluplus (F8) group than the AGN EtOH extract (ext) group (p < 0.05). Based on an in vivo pharmacokinetic study in rats, the relative oral bioavailability of decursinol (DOH), a hepatic metabolite of D and DA, in F8-administered mice was 8.75-fold higher than in AGN EtOH ext-treated group. In scopolamine-induced memory-impaired mice, F8 exhibited a more potent cognitive enhancing effect than AGN EtOH ext in both a Morris water maze test and a passive avoidance test. These findings suggest that HME-processed AGN/Soluplus formulation (F8) could be a promising therapeutic candidate for memory impairment. PMID:25915423

Spelling: A Visual Skill.

ERIC Educational Resources Information Center

Hendrickson, Homer

1988-01-01

Spelling problems arise due to problems with form discrimination and inadequate visualization. A child's sequence of visual development involves learning motor control and coordination, with vision directing and monitoring the movements; learning visual comparison of size, shape, directionality, and solidity; developing visual memory or recall;…

Solid-state rechargeable magnesium battery

DOEpatents

Shao, Yuyan; Liu, Jun; Liu, Tianbiao; Li, Guosheng

2016-09-06

Embodiments of a solid-state electrolyte comprising magnesium borohydride, polyethylene oxide, and optionally a Group IIA or transition metal oxide are disclosed. The solid-state electrolyte may be a thin film comprising a dispersion of magnesium borohydride and magnesium oxide nanoparticles in polyethylene oxide. Rechargeable magnesium batteries including the disclosed solid-state electrolyte may have a coulombic efficiency .gtoreq.95% and exhibit cycling stability for at least 50 cycles.

Solid State Research, 1980:1.

DTIC Science & Technology

1980-02-15

ESD-TR-79-325 H 1 Solid State Research 1980 Prepared under Electronic Systems Division Contract FI%28-80-C-0002 by Lincoln Laboratory MASSkCHIISETTS...it is no longer needed. MASSACHUSETTS IN*STITUTE OF TECHNOLOGY LINCOLN LABORATORY V SOLID STATE RESEARCH QUARTERLY TECHNICAL SUMMARY REPORT I NOVEMBER...January 1990. The topics covered a-e Solid State Device Research , Quantum Electronics, Materials Rese.rch, Microelec- tronics, and Analog Device

Integrated Interface Strategy toward Room Temperature Solid-State Lithium Batteries.

PubMed

Ju, Jiangwei; Wang, Yantao; Chen, Bingbing; Ma, Jun; Dong, Shanmu; Chai, Jingchao; Qu, Hongtao; Cui, Longfei; Wu, Xiuxiu; Cui, Guanglei

2018-04-25

Solid-state lithium batteries have drawn wide attention to address the safety issues of power batteries. However, the development of solid-state lithium batteries is substantially limited by the poor electrochemical performances originating from the rigid interface between solid electrodes and solid-state electrolytes. In this work, a composite of poly(vinyl carbonate) and Li 10 SnP 2 S 12 solid-state electrolyte is fabricated successfully via in situ polymerization to improve the rigid interface issues. The composite electrolyte presents a considerable room temperature conductivity of 0.2 mS cm -1 , an electrochemical window exceeding 4.5 V, and a Li + transport number of 0.6. It is demonstrated that solid-state lithium metal battery of LiFe 0.2 Mn 0.8 PO 4 (LFMP)/composite electrolyte/Li can deliver a high capacity of 130 mA h g -1 with considerable capacity retention of 88% and Coulombic efficiency of exceeding 99% after 140 cycles at the rate of 0.5 C at room temperature. The superior electrochemical performance can be ascribed to the good compatibility of the composite electrolyte with Li metal and the integrated compatible interface between solid electrodes and the composite electrolyte engineered by in situ polymerization, which leads to a significant interfacial impedance decrease from 1292 to 213 Ω cm 2 in solid-state Li-Li symmetrical cells. This work provides vital reference for improving the interface compatibility for room temperature solid-state lithium batteries.

Modified Reference SPS with Solid State Transmitting Antenna

NASA Technical Reports Server (NTRS)

Woodcock, G. R.; Sperber, B. R.

1980-01-01

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

Working memory maintenance is sufficient to reduce state anxiety.

PubMed

Balderston, Nicholas L; Quispe-Escudero, David; Hale, Elizabeth; Davis, Andrew; O'Connell, Katherine; Ernst, Monique; Grillon, Christian

2016-11-01

According to the attentional control theory (ACT) proposed by Eysenck and colleagues, anxiety interferes with cognitive processing by prioritizing bottom-up attentional processes over top-down attentional processes, leading to competition for access to limited resources in working memory, particularly the central executive (Eysenck, Derakshan, Santos, & Calvo, ). However, previous research using the n-back working memory task suggests that working memory load also reduces state anxiety. Assuming that similar mechanisms underlie the effect of anxiety on cognition, and the effect of cognition on anxiety, one possible implication of the ACT would suggest that the reduction of state anxiety with increasing working memory load is driven by activation of central executive attentional control processes. We tested this hypothesis using the Sternberg working memory paradigm, where maintenance processes can be isolated from central executive processes (Altamura et al., ; Sternberg, ). Consistent with the n-back results, subjects showed decreased state anxiety during the maintenance period of high-load trials relative to low-load trials, suggesting that maintenance processes alone are sufficient to achieve this state anxiety reduction. Given that the Sternberg task does not require central executive engagement, these results are not consistent with an implication of the ACT where the cognition/anxiety relationship and anxiety/cognition relationship are mediated by similar central executive mechanisms. Instead, we propose an extension of the ACT such that engaging working memory maintenance suppresses state anxiety in a load-dependent manner. Furthermore, we hypothesize that the efficacy of this effect may moderate the effect of trait anxiety on cognition. Published 2016. This article is a U.S. Government work and is in the public domain in the USA.

Decoding fMRI Signatures of Real-world Autobiographical Memory Retrieval.

PubMed

Rissman, Jesse; Chow, Tiffany E; Reggente, Nicco; Wagner, Anthony D

2016-04-01

Extant neuroimaging data implicate frontoparietal and medial-temporal lobe regions in episodic retrieval, and the specific pattern of activity within and across these regions is diagnostic of an individual's subjective mnemonic experience. For example, in laboratory-based paradigms, memories for recently encoded faces can be accurately decoded from single-trial fMRI patterns [Uncapher, M. R., Boyd-Meredith, J. T., Chow, T. E., Rissman, J., & Wagner, A. D. Goal-directed modulation of neural memory patterns: Implications for fMRI-based memory detection. Journal of Neuroscience, 35, 8531-8545, 2015; Rissman, J., Greely, H. T., & Wagner, A. D. Detecting individual memories through the neural decoding of memory states and past experience. Proceedings of the National Academy of Sciences, U.S.A., 107, 9849-9854, 2010]. Here, we investigated the neural patterns underlying memory for real-world autobiographical events, probed at 1- to 3-week retention intervals as well as whether distinct patterns are associated with different subjective memory states. For 3 weeks, participants (n = 16) wore digital cameras that captured photographs of their daily activities. One week later, they were scanned while making memory judgments about sequences of photos depicting events from their own lives or events captured by the cameras of others. Whole-brain multivoxel pattern analysis achieved near-perfect accuracy at distinguishing correctly recognized events from correctly rejected novel events, and decoding performance did not significantly vary with retention interval. Multivoxel pattern classifiers also differentiated recollection from familiarity and reliably decoded the subjective strength of recollection, of familiarity, or of novelty. Classification-based brain maps revealed dissociable neural signatures of these mnemonic states, with activity patterns in hippocampus, medial PFC, and ventral parietal cortex being particularly diagnostic of recollection. Finally, a classifier trained on previously acquired laboratory-based memory data achieved reliable decoding of autobiographical memory states. We discuss the implications for neuroscientific accounts of episodic retrieval and comment on the potential forensic use of fMRI for probing experiential knowledge.

An optoelectronic framework enabled by low-dimensional phase-change films.

PubMed

Hosseini, Peiman; Wright, C David; Bhaskaran, Harish

2014-07-10

The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

A solid state video recorder as a direct replacement of a mechanically driven disc recording device in a security system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terry, P.L.

1989-01-01

Whether upgrading or developing a security system, investing in a solid state video recorder may prove to be quite prudent. Even though the initial cost of a solid state recorder may be more expensive, when comparing it to a disc recorder it is practically maintenance free. Thus, the cost effectiveness of a solid state video recorder over an extended period of time more than justifies the initial expense. This document illustrates the use of a solid state video recorder as a direct replacement. It replaces a mechanically driven disc recorder that existed in a synchronized video recording system. The originalmore » system was called the Universal Video Disc Recorder System. The modified system will now be referred to as the Solid State Video Recording System. 5 figs.« less

Changes in Neural Connectivity and Memory Following a Yoga Intervention for Older Adults: A Pilot Study.

PubMed

Eyre, Harris A; Acevedo, Bianca; Yang, Hongyu; Siddarth, Prabha; Van Dyk, Kathleen; Ercoli, Linda; Leaver, Amber M; Cyr, Natalie St; Narr, Katherine; Baune, Bernhard T; Khalsa, Dharma S; Lavretsky, Helen

2016-01-01

No study has explored the effect of yoga on cognitive decline and resting-state functional connectivity. This study explored the relationship between performance on memory tests and resting-state functional connectivity before and after a yoga intervention versus active control for subjects with mild cognitive impairment (MCI). Participants ( ≥ 55 y) with MCI were randomized to receive a yoga intervention or active "gold-standard" control (i.e., memory enhancement training (MET)) for 12 weeks. Resting-state functional magnetic resonance imaging was used to map correlations between brain networks and memory performance changes over time. Default mode networks (DMN), language and superior parietal networks were chosen as networks of interest to analyze the association with changes in verbal and visuospatial memory performance. Fourteen yoga and 11 MET participants completed the study. The yoga group demonstrated a statistically significant improvement in depression and visuospatial memory. We observed improved verbal memory performance correlated with increased connectivity between the DMN and frontal medial cortex, pregenual anterior cingulate cortex, right middle frontal cortex, posterior cingulate cortex, and left lateral occipital cortex. Improved verbal memory performance positively correlated with increased connectivity between the language processing network and the left inferior frontal gyrus. Improved visuospatial memory performance correlated inversely with connectivity between the superior parietal network and the medial parietal cortex. Yoga may be as effective as MET in improving functional connectivity in relation to verbal memory performance. These findings should be confirmed in larger prospective studies.

Lipid immiscibility and biophysical properties: Molecular order within and among unit cell volumes

USDA-ARS?s Scientific Manuscript database

Saturated and unsaturated fatty acids clearly have a discrete chemical structure in the solid state. In a saturated solution, the solid state and solution state are in chemical equilibrium. The lipid stearic acid packs in unit cell volumes in the liquid state as well as in the solid state. Normal...

Does the Magnetosphere go to Sleep?

NASA Astrophysics Data System (ADS)

Hesse, M.; Moretto, T.; Friis-Christensen, E. A.; Kuznetsova, M.; Østgaard, N.; Tenfjord, P.; Opgenoorth, H. J.

2017-12-01

An interesting question in magnetospheric research is related to the transition between magnetospheric configurations under substantial solar wind driving, and a putative relaxed state after the driving ceases. While it is conceivable that the latter state may be unique and only dependent on residual solar wind driving, a more likely scenario has magnetospheric memory playing a key role. Memory processes may be manifold: constraints from conservation of flux tube entropy to neutral wind inertia in the upper atmosphere may all contribute. In this presentation, we use high-resolution, global, MHD simulations to begin to shed light on this transition, as well as on the concept of a quiet state of the magnetosphere. We will discuss key elements of magnetospheric memory, and demonstrate their influence, as well as the actual memory time scale, through simulations and analytical estimates. Finally, we will point out processes with the potential to effect magnetospheric memory loss.

Josephson Thermal Memory

NASA Astrophysics Data System (ADS)

Guarcello, Claudio; Solinas, Paolo; Braggio, Alessandro; Di Ventra, Massimiliano; Giazotto, Francesco

2018-01-01

We propose a superconducting thermal memory device that exploits the thermal hysteresis in a flux-controlled temperature-biased superconducting quantum-interference device (SQUID). This system reveals a flux-controllable temperature bistability, which can be used to define two well-distinguishable thermal logic states. We discuss a suitable writing-reading procedure for these memory states. The time of the memory writing operation is expected to be on the order of approximately 0.2 ns for a Nb-based SQUID in thermal contact with a phonon bath at 4.2 K. We suggest a noninvasive readout scheme for the memory states based on the measurement of the effective resonance frequency of a tank circuit inductively coupled to the SQUID. The proposed device paves the way for a practical implementation of thermal logic and computation. The advantage of this proposal is that it represents also an example of harvesting thermal energy in superconducting circuits.

Solid-state optical refrigeration to sub-100 Kelvin regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melgaard, Seth D.; Albrecht, Alexander R.; Hehlen, Markus P.

We report that since the first demonstration of net cooling twenty years ago, optical refrigeration of solids has progressed to outperform all other solid-state cooling processes. It has become the first and only solid-state refrigerator capable of reaching cryogenic temperatures, and now the first solid-state cooling below 100 K. Such substantial progress required a multi-disciplinary approach of pump laser absorption enhancement, material characterization and purification, and thermal management. Here we present the culmination of two decades of progress, the record cooling to ≈91K from room temperature.

Solid-state optical refrigeration to sub-100 Kelvin regime

DOE PAGES

Melgaard, Seth D.; Albrecht, Alexander R.; Hehlen, Markus P.; ...

2016-02-05

We report that since the first demonstration of net cooling twenty years ago, optical refrigeration of solids has progressed to outperform all other solid-state cooling processes. It has become the first and only solid-state refrigerator capable of reaching cryogenic temperatures, and now the first solid-state cooling below 100 K. Such substantial progress required a multi-disciplinary approach of pump laser absorption enhancement, material characterization and purification, and thermal management. Here we present the culmination of two decades of progress, the record cooling to ≈91K from room temperature.

Solid-state optical refrigeration to sub-100 Kelvin regime

PubMed Central

Melgaard, Seth D.; Albrecht, Alexander R.; Hehlen, Markus P.; Sheik-Bahae, Mansoor

2016-01-01

Since the first demonstration of net cooling twenty years ago, optical refrigeration of solids has progressed to outperform all other solid-state cooling processes. It has become the first and only solid-state refrigerator capable of reaching cryogenic temperatures, and now the first solid-state cooling below 100 K. Such substantial progress required a multi-disciplinary approach of pump laser absorption enhancement, material characterization and purification, and thermal management. Here we present the culmination of two decades of progress, the record cooling to ≈ 91 K from room temperature. PMID:26847703

78 FR 11675 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-19

... A detailed assessment of the human remains was made by the Burke Museum professional staff in... Inventory Completion: Thomas Burke Memorial Washington State Museum, University of Washington, Seattle, WA... State Museum (Burke Museum) has completed an inventory of human remains, in consultation with the...

77 FR 51564 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-24

... the human remains was made by the Burke Museum professional staff in consultation with representatives... Inventory Completion: Thomas Burke Memorial Washington State Museum, University of Washington, Seattle, WA... State Museum (Burke Museum), University of Washington, has completed an inventory of human remains, in...

An analytical model of memristors in plants

PubMed Central

Markin, Vladislav S; Volkov, Alexander G; Chua, Leon

2014-01-01

The memristor, a resistor with memory, was postulated by Chua in 1971 and the first solid-state memristor was built in 2008. Recently, we found memristors in vivo in plants. Here we propose a simple analytical model of 2 types of memristors that can be found within plants. The electrostimulation of plants by bipolar periodic waves induces electrical responses in the Aloe vera and Mimosa pudica with fingerprints of memristors. Memristive properties of the Aloe vera and Mimosa pudica are linked to the properties of voltage gated K+ ion channels. The potassium channel blocker TEACl transform plant memristors to conventional resistors. The analytical model of a memristor with a capacitor connected in parallel exhibits different characteristic behavior at low and high frequency of applied voltage, which is the same as experimental data obtained by cyclic voltammetry in vivo. PMID:25482769

Magnetic properties in polycrystalline and single crystal Ca-doped LaCoO3

NASA Astrophysics Data System (ADS)

Zeng, R.; Debnath, J. C.; Chen, D. P.; Shamba, P.; Wang, J. L.; Kennedy, S. J.; Campbell, S. J.; Silver, T.; Dou, S. X.

2011-04-01

Polycrystalline (PC) and single crystalline (SC) Ca-doped LaCoO3 (LCCO) samples with the perovskite structure were synthesized by conventional solid-state reaction and the floating-zone growth method. We present the results of a comprehensive investigation of the magnetic properties of the LCCO system. Systematic measurements have been conducted on dc magnetization, ac susceptibility, exchange-bias, and the magnetocaloric effect. These findings suggest that complex structural phases, ferromagnetic (FM), and spin-glass/cluster-spin-glass (CSG), and their transitions exist in PC samples, while there is a much simpler magnetic phase in SC samples. It was also of interest to discover that the CSG induced a magnetic field memory effect and an exchange-bias-like effect, and that a large inverse irreversible magnetocaloric effect exists in this system.

Parallel implementation of D-Phylo algorithm for maximum likelihood clusters.

PubMed

Malik, Shamita; Sharma, Dolly; Khatri, Sunil Kumar

2017-03-01

This study explains a newly developed parallel algorithm for phylogenetic analysis of DNA sequences. The newly designed D-Phylo is a more advanced algorithm for phylogenetic analysis using maximum likelihood approach. The D-Phylo while misusing the seeking capacity of k -means keeps away from its real constraint of getting stuck at privately conserved motifs. The authors have tested the behaviour of D-Phylo on Amazon Linux Amazon Machine Image(Hardware Virtual Machine)i2.4xlarge, six central processing unit, 122 GiB memory, 8  ×  800 Solid-state drive Elastic Block Store volume, high network performance up to 15 processors for several real-life datasets. Distributing the clusters evenly on all the processors provides us the capacity to accomplish a near direct speed if there should arise an occurrence of huge number of processors.

On the dynamics of water molecules at the protein solute interfaces.

PubMed

Bernini, A; Spiga, O; Ciutti, A; Chiellini, S; Menciassi, N; Venditti, V; Niccolai, N

2004-10-01

Proteins, with the large variety of chemical groups they present at their molecular surface, are a class of molecules which can be very informative on most of the possible solute-solvent interactions. Hen egg white lysozyme has been used as a probe to investigate the complex solvent dynamics occurring at the protein surface, by analysing the results obtained from Nuclear Magnetic Resonance, X-ray diffractometry and Molecular Dynamics simulations. A consistent overall picture for the dynamics of water molecules close to the protein is obtained, suggesting that a rapid exchange occurs, in a picosecond timescale, among all the possible hydration surface sites both in solution and the solid state, excluding the possibility that solvent molecules can form liquid-crystal-like supramolecular adducts, which have been proposed as a molecular basis of 'memory of water'.

MLFMA-accelerated Nyström method for ultrasonic scattering - Numerical results and experimental validation

NASA Astrophysics Data System (ADS)

Gurrala, Praveen; Downs, Andrew; Chen, Kun; Song, Jiming; Roberts, Ron

2018-04-01

Full wave scattering models for ultrasonic waves are necessary for the accurate prediction of voltage signals received from complex defects/flaws in practical nondestructive evaluation (NDE) measurements. We propose the high-order Nyström method accelerated by the multilevel fast multipole algorithm (MLFMA) as an improvement to the state-of-the-art full-wave scattering models that are based on boundary integral equations. We present numerical results demonstrating improvements in simulation time and memory requirement. Particularly, we demonstrate the need for higher order geom-etry and field approximation in modeling NDE measurements. Also, we illustrate the importance of full-wave scattering models using experimental pulse-echo data from a spherical inclusion in a solid, which cannot be modeled accurately by approximation-based scattering models such as the Kirchhoff approximation.

Episodic memory retrieval, parietal cortex, and the Default Mode Network: functional and topographic analyses

PubMed Central

Sestieri, Carlo; Corbetta, Maurizio; Romani, Gian Luca; Shulman, Gordon L.

2011-01-01

The default mode network (DMN) is often considered a functionally homogeneous system that is broadly associated with internally directed cognition (e.g. episodic memory, theory of mind, self-evaluation). However, few studies have examined how this network interacts with other networks during putative “default” processes such as episodic memory retrieval. Using fMRI, we investigated the topography and response profile of human parietal regions inside and outside the DMN, independently defined using task-evoked deactivations and resting state functional connectivity, during episodic memory retrieval. Memory retrieval activated posterior nodes of the DMN, particularly the angular gyrus, but also more anterior and dorsal parietal regions that were anatomically separate from the DMN. The two sets of parietal regions showed different resting-state functional connectivity and response profiles. During memory retrieval, responses in DMN regions peaked sooner than non-DMN regions, which in turn showed responses that were sustained until a final memory judgment was reached. Moreover, a parahippocampal region that showed strong resting-state connectivity with parietal DMN regions also exhibited a pattern of task-evoked activity similar to that exhibited by DMN regions. These results suggest that DMN parietal regions directly supported memory retrieval, whereas non-DMN parietal regions were more involved in post-retrieval processes such as memory-based decision making. Finally, a robust functional dissociation within the DMN was observed. While angular gyrus and posterior cingulate/precuneus were significantly activated during memory retrieval, an anterior DMN node in medial prefrontal cortex was strongly deactivated. This latter finding demonstrates functional heterogeneity rather than homogeneity within the DMN during episodic memory retrieval. PMID:21430142

Episodic memory retrieval, parietal cortex, and the default mode network: functional and topographic analyses.

PubMed

Sestieri, Carlo; Corbetta, Maurizio; Romani, Gian Luca; Shulman, Gordon L

2011-03-23

The default mode network (DMN) is often considered a functionally homogeneous system that is broadly associated with internally directed cognition (e.g., episodic memory, theory of mind, self-evaluation). However, few studies have examined how this network interacts with other networks during putative "default" processes such as episodic memory retrieval. Using functional magnetic resonance imaging, we investigated the topography and response profile of human parietal regions inside and outside the DMN, independently defined using task-evoked deactivations and resting-state functional connectivity, during episodic memory retrieval. Memory retrieval activated posterior nodes of the DMN, particularly the angular gyrus, but also more anterior and dorsal parietal regions that were anatomically separate from the DMN. The two sets of parietal regions showed different resting-state functional connectivity and response profiles. During memory retrieval, responses in DMN regions peaked sooner than non-DMN regions, which in turn showed responses that were sustained until a final memory judgment was reached. Moreover, a parahippocampal region that showed strong resting-state connectivity with parietal DMN regions also exhibited a pattern of task-evoked activity similar to that exhibited by DMN regions. These results suggest that DMN parietal regions directly supported memory retrieval, whereas non-DMN parietal regions were more involved in postretrieval processes such as memory-based decision making. Finally, a robust functional dissociation within the DMN was observed. Whereas angular gyrus and posterior cingulate/precuneus were significantly activated during memory retrieval, an anterior DMN node in medial prefrontal cortex was strongly deactivated. This latter finding demonstrates functional heterogeneity rather than homogeneity within the DMN during episodic memory retrieval.

The effect of visual and interaction fidelity on spatial cognition in immersive virtual environments.

PubMed

Mania, Katerina; Wooldridge, Dave; Coxon, Matthew; Robinson, Andrew

2006-01-01

Accuracy of memory performance per se is an imperfect reflection of the cognitive activity (awareness states) that underlies performance in memory tasks. The aim of this research is to investigate the effect of varied visual and interaction fidelity of immersive virtual environments on memory awareness states. A between groups experiment was carried out to explore the effect of rendering quality on location-based recognition memory for objects and associated states of awareness. The experimental space, consisting of two interconnected rooms, was rendered either flat-shaded or using radiosity rendering. The computer graphics simulations were displayed on a stereo head-tracked Head Mounted Display. Participants completed a recognition memory task after exposure to the experimental space and reported one of four states of awareness following object recognition. These reflected the level of visual mental imagery involved during retrieval, the familiarity of the recollection, and also included guesses. Experimental results revealed variations in the distribution of participants' awareness states across conditions while memory performance failed to reveal any. Interestingly, results revealed a higher proportion of recollections associated with mental imagery in the flat-shaded condition. These findings comply with similar effects revealed in two earlier studies summarized here, which demonstrated that the less "naturalistic" interaction interface or interface of low interaction fidelity provoked a higher proportion of recognitions based on visual mental images.

Real-Time State Estimation in a Flight Simulator Using fNIRS

PubMed Central

Gateau, Thibault; Durantin, Gautier; Lancelot, Francois; Scannella, Sebastien; Dehais, Frederic

2015-01-01

Working memory is a key executive function for flying an aircraft. This function is particularly critical when pilots have to recall series of air traffic control instructions. However, working memory limitations may jeopardize flight safety. Since the functional near-infrared spectroscopy (fNIRS) method seems promising for assessing working memory load, our objective is to implement an on-line fNIRS-based inference system that integrates two complementary estimators. The first estimator is a real-time state estimation MACD-based algorithm dedicated to identifying the pilot’s instantaneous mental state (not-on-task vs. on-task). It does not require a calibration process to perform its estimation. The second estimator is an on-line SVM-based classifier that is able to discriminate task difficulty (low working memory load vs. high working memory load). These two estimators were tested with 19 pilots who were placed in a realistic flight simulator and were asked to recall air traffic control instructions. We found that the estimated pilot’s mental state matched significantly better than chance with the pilot’s real state (62% global accuracy, 58% specificity, and 72% sensitivity). The second estimator, dedicated to assessing single trial working memory loads, led to 80% classification accuracy, 72% specificity, and 89% sensitivity. These two estimators establish reusable blocks for further fNIRS-based passive brain computer interface development. PMID:25816347

Design of a Molecular Memory Device: The Electron Transfer Shift Register Memory

NASA Technical Reports Server (NTRS)

Beratan, D.

1993-01-01

A molecular shift register memory at the molecular level is described. The memory elements consist of molecules can exit in either an oxidized or reduced state and the bits are shifted between the cells with photoinduced electron transfer reactions.

Bridging consciousness and cognition in memory and perception: evidence for both state and strength processes.

PubMed

Aly, Mariam; Yonelinas, Andrew P

2012-01-01

Subjective experience indicates that mental states are discrete, in the sense that memories and perceptions readily come to mind in some cases, but are entirely unavailable to awareness in others. However, a long history of psychophysical research has indicated that the discrete nature of mental states is largely epiphenomenal and that mental processes vary continuously in strength. We used a novel combination of behavioral methodologies to examine the processes underlying perception of complex images: (1) analysis of receiver operating characteristics (ROCs), (2) a modification of the change-detection flicker paradigm, and (3) subjective reports of conscious experience. These methods yielded converging results showing that perceptual judgments reflect the combined, yet functionally independent, contributions of two processes available to conscious experience: a state process of conscious perception and a strength process of knowing; processes that correspond to recollection and familiarity in long-term memory. In addition, insights from the perception experiments led to the discovery of a new recollection phenomenon in a long-term memory change detection paradigm. The apparent incompatibility between subjective experience and theories of cognition can be understood within a unified state-strength framework that links consciousness to cognition across the domains of perception and memory.

Bridging Consciousness and Cognition in Memory and Perception: Evidence for Both State and Strength Processes

PubMed Central

Aly, Mariam; Yonelinas, Andrew P.

2012-01-01

Subjective experience indicates that mental states are discrete, in the sense that memories and perceptions readily come to mind in some cases, but are entirely unavailable to awareness in others. However, a long history of psychophysical research has indicated that the discrete nature of mental states is largely epiphenomenal and that mental processes vary continuously in strength. We used a novel combination of behavioral methodologies to examine the processes underlying perception of complex images: (1) analysis of receiver operating characteristics (ROCs), (2) a modification of the change-detection flicker paradigm, and (3) subjective reports of conscious experience. These methods yielded converging results showing that perceptual judgments reflect the combined, yet functionally independent, contributions of two processes available to conscious experience: a state process of conscious perception and a strength process of knowing; processes that correspond to recollection and familiarity in long-term memory. In addition, insights from the perception experiments led to the discovery of a new recollection phenomenon in a long-term memory change detection paradigm. The apparent incompatibility between subjective experience and theories of cognition can be understood within a unified state-strength framework that links consciousness to cognition across the domains of perception and memory. PMID:22272314

Spin memory effect for compact binaries in the post-Newtonian approximation

NASA Astrophysics Data System (ADS)

Nichols, David A.

2017-04-01

The spin memory effect is a recently predicted relativistic phenomenon in asymptotically flat spacetimes that become nonradiative infinitely far in the past and future. Between these early and late times, the magnetic-parity part of the time integral of the gravitational-wave strain can undergo a nonzero change; this difference is the spin memory effect. Families of freely falling observers around an isolated source can measure this effect, in principle, and fluxes of angular momentum per unit solid angle (or changes in superspin charges) generate the effect. The spin memory effect had not been computed explicitly for astrophysical sources of gravitational waves, such as compact binaries. In this paper, we compute the spin memory in terms of a set of radiative multipole moments of the gravitational-wave strain. The result of this calculation allows us to establish the following results about the spin memory: (i) We find that the accumulation of the spin memory behaves in a qualitatively different way from that of the displacement memory effect for nonspinning, quasicircular compact binaries in the post-Newtonian approximation: the spin memory undergoes a large secular growth over the duration of the inspiral, whereas for the displacement effect this increase is small. (ii) The rate at which the spin memory grows is equivalent to a nonlinear, but nonoscillatory and nonhereditary effect in the gravitational waveform that had been previously calculated for nonspinning, quasicircular compact binaries. (iii) This rate of buildup of the spin memory could potentially be detected by future gravitational-wave detectors by carefully combining the measured waveforms from hundreds of gravitational-wave detections of compact binaries.

Comparison of solid-state and submerged-state fermentation for the bioprocessing of switchgrass to ethanol and acetate by Clostridium phytofermentans.

PubMed

Jain, Abhiney; Morlok, Charles K; Henson, J Michael

2013-01-01

The conversion of sustainable energy crops using microbiological fermentation to biofuels and bioproducts typically uses submerged-state processes. Alternatively, solid-state fermentation processes have several advantages when compared to the typical submerged-state processes. This study compares the use of solid-state versus submerged-state fermentation using the mesophilic anaerobic bacterium Clostridium phytofermentans in the conversion of switchgrass to the end products of ethanol, acetate, and hydrogen. A shift in the ratio of metabolic products towards more acetate and hydrogen production than ethanol production was observed when C. phytofermentans was grown under solid-state conditions as compared to submerged-state conditions. Results indicated that the end product concentrations (in millimolar) obtained using solid-state fermentation were higher than using submerged-state fermentation. In contrast, the total fermentation products (in weight of product per weight of carbohydrates consumed) and switchgrass conversion were higher for submerged-state fermentation. The conversion of xylan was greater than glucan conversion under both fermentation conditions. An initial pH of 7 and moisture content of 80 % resulted in maximum end products formation. Scanning electron microscopy study showed the presence of biofilm formed by C. phytofermentans growing on switchgrass under submerged-state fermentation whereas bacterial cells attached to surface and no apparent biofilm was observed when grown under solid-state fermentation. To our knowledge, this is the first study reporting consolidated bioprocessing of a lignocellulosic substrate by a mesophilic anaerobic bacterium under solid-state fermentation conditions.

Superior Blends Solid Polymer Electrolyte with Integrated Hierarchical Architectures for All-Solid-State Lithium-Ion Batteries.

PubMed

Zhang, Dechao; Zhang, Long; Yang, Kun; Wang, Hongqiang; Yu, Chuang; Xu, Di; Xu, Bo; Wang, Li-Min

2017-10-25

Exploration of advanced solid electrolytes with good interfacial stability toward electrodes is a highly relevant research topic for all-solid-state batteries. Here, we report PCL/SN blends integrating with PAN-skeleton as solid polymer electrolyte prepared by a facile method. This polymer electrolyte with hierarchical architectures exhibits high ionic conductivity, large electrochemical windows, high degree flexibility, good flame-retardance ability, and thermal stability (workable at 80 °C). Additionally, it demonstrates superior compatibility and electrochemical stability toward metallic Li as well as LiFePO 4 cathode. The electrolyte/electrode interfaces are very stable even subjected to 4.5 V at charging state for long time. The LiFePO 4 /Li all-solid-state cells based on this electrolyte deliver high capacity, outstanding cycling stability, and superior rate capability better than those based on liquid electrolyte. This solid polymer electrolyte is eligible for next generation high energy density all-solid-state batteries.

The death of recency: Relationship between end-state comfort and serial position effects in serial recall: Logan and Fischman (2011) revisited.

PubMed

Logan, Samuel W; Fischman, Mark G

2015-12-01

Two experiments examined the dynamic interaction between cognitive resources in short-term memory and bimanual object manipulation by extending recent research by Logan and Fischman (2011). In Experiment 1, 16 participants completed a bimanual end-state comfort task and a memory task requiring serial recall of 12 words or pictures. The end-state comfort task involved moving two glasses between two shelves. Participants viewed the items, performed the end-state comfort task, and then serially recalled the items. Recall was evaluated by the presence or absence of primacy and recency effects. The end-state comfort effect (ESCE) was assessed by the percentage of initial hand positions that allowed the hands to end comfortably. The main findings indicated that the ESCE was disrupted; the primacy effect remained intact; and the recency effect disappeared regardless of the type of memory item recalled. In Experiment 2, 16 participants viewed six items, performed an end-state comfort task, viewed another six items, and then serially recalled all 12 items. Results were essentially the same as in Experiment 1. Findings suggest that executing a bimanual end-state comfort task, regardless of when it is completed during a memory task, diminishes the recency effect irrespective of the type of memory item. Copyright © 2015 Elsevier B.V. All rights reserved.

[Interactions between the hippocampus and the amygdala in synaptic plasticity processes. A key to understanding the relations between motivation and memory].

PubMed

Almaguer-Melián, W; Bergado-Rosado, J A

Memory is initially stored as a transitory change that can become consolidated and converted into a long term memory trace. Consolidation largely depends on the emotional state. It is known that the hippocampus plays a role in the consolidation process of certain types of memory and that the amygdala might modulate the consolidation of the memory traces in other parts of the brain. The interaction between these two structures is crucial in many forms of learning and memory. The hippocampus, as well as the amygdala, display a type of synaptic plasticity known as long term potentiation (LTP), which is considered to be a cellular memory mechanism. Recently, it has been reported that the consolidation of the hippocampal LTP may be modulated, like memory, by the emotional state and by the activation of the basolateral amygdala. These findings, taken as a whole, can help to explain how the processes of consolidation of memory take place. At the same time they also constitute a more physiological model of the learning and memory processes, which will provide us with a more accurate understanding of the mechanisms behind the consolidation of the memory.

Reducing noise in a Raman quantum memory.

PubMed

Bustard, Philip J; England, Duncan G; Heshami, Khabat; Kupchak, Connor; Sussman, Benjamin J

2016-11-01

Optical quantum memories are an important component of future optical and hybrid quantum technologies. Raman schemes are strong candidates for use with ultrashort optical pulses due to their broad bandwidth; however, the elimination of deleterious four-wave mixing noise from Raman memories is critical for practical applications. Here, we demonstrate a quantum memory using the rotational states of hydrogen molecules at room temperature. Polarization selection rules prohibit four-wave mixing, allowing the storage and retrieval of attenuated coherent states with a mean photon number 0.9 and a pulse duration 175 fs. The 1/e memory lifetime is 85.5 ps, demonstrating a time-bandwidth product of ≈480 in a memory that is well suited for use with broadband heralded down-conversion and fiber-based photon sources.

Quantum memories: emerging applications and recent advances

NASA Astrophysics Data System (ADS)

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-11-01

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances.

PubMed

Heshami, Khabat; England, Duncan G; Humphreys, Peter C; Bustard, Philip J; Acosta, Victor M; Nunn, Joshua; Sussman, Benjamin J

2016-11-12

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances

PubMed Central

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-01-01

Quantum light–matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories. PMID:27695198

KSC-03pd2211

NASA Image and Video Library

2003-07-23

KENNEDY SPACE CENTER, FLA. - An aerial view of the KSC Visitor Complex shows the Shuttle Plaza at left, with the solid rocket boosters and external tank and a model of an orbiter; the Astronaut Memorial Mirror in the center alongside the lake; and the Rocket Garden at right, center.

Solid solutions of MnSb as recording media in optical memory applications

NASA Astrophysics Data System (ADS)

Bai, V. S.; Rama Rao, K. V. S.

1984-03-01

Possibilities regarding the use of larger packing densities and faster access times make it potentially feasible to employ optical technology for the development of computer data storage systems with a performance which is 2-4 orders of magnitude better than that of conventional systems. The information can be stored on thin magnetic films using the technique of laser Curie point writing and retrieved with the aid of magnetooptic readout. Thin films of MnBi have been studied extensively as a prospective storage medium. However, certain difficulties arise in connection with a phase transformation. For these reasons, the present investigation is concerned with the possibility of employing as storage medium MnSb, in which such a phase transformation is absent. In the case of MnSb, a change regarding the easy direction of magnetization would be required. Attention is given to several solid solutions of MnSb and the merits of these materials for optical memory applications.

Hippocampal corticosterone impairs memory consolidation during sleep but improves consolidation in the wake state

PubMed Central

Kelemen, Eduard; Bahrendt, Marie; Born, Jan; Inostroza, Marion

2014-01-01

We studied the interaction between glucocorticoid (GC) level and sleep/wake state during memory consolidation. Recent research has accumulated evidence that sleep supports memory consolidation in a unique physiological process, qualitatively distinct from consolidation occurring during wakefulness. This appears particularly true for memories that rely on the hippocampus, a region with abundant expression of GC receptors. Against this backdrop we hypothesized that GC effects on consolidation depend on the brain state, i.e., sleep and wakefulness. Following exploration of two objects in an open field, during 80 min retention periods rats received an intrahippocampal infusion of corticosterone (10 ng) or vehicle while asleep or awake. Then the memory was tested in the hippocampus-dependent object-place recognition paradigm. GCs impaired memory consolidation when administered during sleep but improved consolidation during the wake retention interval. Intrahippocampal infusion of GC or sleep/wake manipulations did not alter novel-object recognition performance that does not require the hippocampus. This work corroborates the notion of distinct consolidation processes occurring in sleep and wakefulnesss, and identifies GCs as a key player controlling distinct hippocampal memory consolidation processes in sleep and wake conditions. © 2014 Wiley Periodicals, Inc. PMID:24596244

The effects of diazepam and oxprenolol on short term memory in individuals of high and low state anxiety.

PubMed Central

Desai, N; Taylor-Davies, A; Barnett, D B

1983-01-01

1 The effect of oral doses of diazepam (5 mg) and oxprenolol (80 mg) on short term memory of normal individuals stratified for 'state' anxiety levels has been investigated. 2 Normal student volunteers were stratified into high and low anxiety groups on the basis of responses to the Spielberger 'A-state' scale. Subjects were then randomly administered active drug or placebo and given a form of running memory test performed under a variety of conditions in which variable rate of item presentation and articulatory suppression were used. 3 Diazepam significantly reduced the errors of recall in the running memory test in the high anxiety group and produced a distinct separation of response from the low anxiety group under the test conditions of slow item presentation with articulatory suppression. Oxprenolol had no effect on the short term memory test in either high or low anxiety groups in any experimental test situation. 4 These results are compared to previous work in which generally a deleterious effect of diazepam on short term memory in normal volunteers has been reported. The implications of these findings are further discussed in relationship to possible models of memory function. PMID:6849754

Cortical connectivity and memory performance in cognitive decline: A study via graph theory from EEG data.

PubMed

Vecchio, F; Miraglia, F; Quaranta, D; Granata, G; Romanello, R; Marra, C; Bramanti, P; Rossini, P M

2016-03-01

Functional brain abnormalities including memory loss are found to be associated with pathological changes in connectivity and network neural structures. Alzheimer's disease (AD) interferes with memory formation from the molecular level, to synaptic functions and neural networks organization. Here, we determined whether brain connectivity of resting-state networks correlate with memory in patients affected by AD and in subjects with mild cognitive impairment (MCI). One hundred and forty-four subjects were recruited: 70 AD (MMSE Mini Mental State Evaluation 21.4), 50 MCI (MMSE 25.2) and 24 healthy subjects (MMSE 29.8). Undirected and weighted cortical brain network was built to evaluate graph core measures to obtain Small World parameters. eLORETA lagged linear connectivity as extracted by electroencephalogram (EEG) signals was used to weight the network. A high statistical correlation between Small World and memory performance was found. Namely, higher Small World characteristic in EEG gamma frequency band during the resting state, better performance in short-term memory as evaluated by the digit span tests. Such Small World pattern might represent a biomarker of working memory impairment in older people both in physiological and pathological conditions. Copyright © 2015 IBRO. Published by Elsevier Ltd. All rights reserved.

Synthesis of azines in solid state: reactivity of solid hydrazine with aldehydes and ketones.

PubMed

Lee, Byeongno; Lee, Kyu Hyung; Cho, Jaeheung; Nam, Wonwoo; Hur, Nam Hwi

2011-12-16

Highly conjugated azines were prepared by solid state grinding of solid hydrazine and carbonyl compounds such as aldehydes and ketones, using a mortar and a pestle. Complete conversion to the azine product is generally achieved at room temperature within 24 h, without using solvents or additives. The solid-state reactions afford azines as the sole products with greater than 97% yield, producing only water and carbon dioxide as waste.

Emotional state and local versus global spatial memory.

PubMed

Brunyé, Tad T; Mahoney, Caroline R; Augustyn, Jason S; Taylor, Holly A

2009-02-01

The present work investigated the effects of participant emotional state on global versus local memory for map-based information. Participants were placed into one of four emotion induction groups, crossing high and low arousal with positive and negative valence, or a control group. They then studied a university campus map and completed two memory tests, free recall and spatial statement verification. Converging evidence from these two tasks demonstrated that arousal amplifies symbolic distance effects and leads to a globally-focused spatial mental representation, partially at the expense of local knowledge. These results were found for both positively- and negatively-valenced affective states. The present study is the first investigation of emotional effects on spatial memory, and has implications for theories of emotion and spatial cognition.

"Reality" of near-death-experience memories: evidence from a psychodynamic and electrophysiological integrated study.

PubMed

Palmieri, Arianna; Calvo, Vincenzo; Kleinbub, Johann R; Meconi, Federica; Marangoni, Matteo; Barilaro, Paolo; Broggio, Alice; Sambin, Marco; Sessa, Paola

2014-01-01

The nature of near-death-experiences (NDEs) is largely unknown but recent evidence suggests the intriguing possibility that NDEs may refer to actually "perceived," and stored, experiences (although not necessarily in relation to the external physical world). We adopted an integrated approach involving a hypnosis-based clinical protocol to improve recall and decrease memory inaccuracy together with electroencephalography (EEG) recording in order to investigate the characteristics of NDE memories and their neural markers compared to memories of both real and imagined events. We included 10 participants with NDEs, defined by the Greyson NDE scale, and 10 control subjects without NDE. Memories were assessed using the Memory Characteristics Questionnaire. Our hypnosis-based protocol increased the amount of details in the recall of all kind of memories considered (NDE, real, and imagined events). Findings showed that NDE memories were similar to real memories in terms of detail richness, self-referential, and emotional information. Moreover, NDE memories were significantly different from memories of imagined events. The pattern of EEG results indicated that real memory recall was positively associated with two memory-related frequency bands, i.e., high alpha and gamma. NDE memories were linked with theta band, a well-known marker of episodic memory. The recall of NDE memories was also related to delta band, which indexes processes such as the recollection of the past, as well as trance states, hallucinations, and other related portals to transpersonal experience. It is notable that the EEG pattern of correlations for NDE memory recall differed from the pattern for memories of imagined events. In conclusion, our findings suggest that, at a phenomenological level, NDE memories cannot be considered equivalent to imagined memories, and at a neural level, NDE memories are stored as episodic memories of events experienced in a peculiar state of consciousness.

40 CFR 256.23 - Requirements for closing or upgrading open dumps.

Code of Federal Regulations, 2010 CFR

2010-07-01

...) SOLID WASTES GUIDELINES FOR DEVELOPMENT AND IMPLEMENTATION OF STATE SOLID WASTE MANAGEMENT PLANS Solid... classification of existing solid waste disposal facilities according to the criteria. This classification shall... solid waste disposal facility; (2) The availability of State regulatory and enforcement powers; and (3...

40 CFR 256.23 - Requirements for closing or upgrading open dumps.

Code of Federal Regulations, 2011 CFR

2011-07-01

...) SOLID WASTES GUIDELINES FOR DEVELOPMENT AND IMPLEMENTATION OF STATE SOLID WASTE MANAGEMENT PLANS Solid... classification of existing solid waste disposal facilities according to the criteria. This classification shall... solid waste disposal facility; (2) The availability of State regulatory and enforcement powers; and (3...

Two dimensional modeling of elastic wave propagation in solids containing cracks with rough surfaces and friction - Part I: Theoretical background.

PubMed

Aleshin, Vladislav; Delrue, Steven; Trifonov, Andrey; Bou Matar, Olivier; Van Den Abeele, Koen

2018-01-01

Our study aims at the creation of a numerical toolbox that describes wave propagation in samples containing internal contacts (e.g. cracks, delaminations, debondings, imperfect intergranular joints) of known geometry with postulated contact interaction laws including friction. The code consists of two entities: the contact model and the solid mechanics module. Part I of the paper concerns the modeling of internal contacts (called cracks for brevity), while part II is related to the integration of the developed contact model into a solid mechanics module that allows the description of wave propagation processes. The contact model is used to produce normal and tangential load-displacement relationships, which in turn are used by the solid mechanics module as boundary conditions at the internal contacts. Due to friction, the tangential reaction curve is hysteretic and memory-dependent. In addition, it depends on the normal reaction curve. An essential feature of the proposed contact model is that it takes into account the roughness of the contact faces. On one hand, accounting for roughness makes the contact model more complicated since it gives rise to a partial slip regime when some parts on the contact area experience slip and some do not. On the other hand, as we will show, the concept of contact surfaces covered by asperities receding under load makes it possible to formulate a consistent contact model that provides nonlinear load-displacement relationships for any value of the drive displacements and their histories. This is a strong advantage, since this way, the displacement-driven model allows for a simple explicit procedure of data exchange with the solid mechanics module, while more traditional flat-surface contacts driven by loads generate a complex iterative procedure. More specifically, the proposed contact model is based on the previously developed method of memory diagrams that allows one to automatically obtain memory-dependent solutions to frictional contact problems in the particular case of partial slip. Here we extend the solution onto cases of total sliding and contact loss which is possible while using the displacement-driven formulation. The method requires the knowledge of the normal contact response obtained in our case as a result of statistical consideration of roughness of contact faces. Copyright © 2017 Elsevier B.V. All rights reserved.

Defense.gov - Special Report: Koran War Veterans Memorial

Science.gov Websites

Department of Defense Submit Search Korean War Veteran Memorial Korean War Special - Memorial Home Page - Photo Essay Memorial Honors Those Who Answered the Call From 1950 to 1953, the United States joined with War Veterans Memorial honors those Americans who answered the call, those who worked and fought under

Gas-Sensing Flip-Flop Circuits

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.; Williams, Roger; Ryan, Margaret A.

1995-01-01

Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.

State-of-the-art review of computational fluid dynamics modeling for fluid-solids systems

NASA Astrophysics Data System (ADS)

Lyczkowski, R. W.; Bouillard, J. X.; Ding, J.; Chang, S. L.; Burge, S. W.

1994-05-01

As the result of 15 years of research (50 staff years of effort) Argonne National Laboratory (ANL), through its involvement in fluidized-bed combustion, magnetohydrodynamics, and a variety of environmental programs, has produced extensive computational fluid dynamics (CFD) software and models to predict the multiphase hydrodynamic and reactive behavior of fluid-solids motions and interactions in complex fluidized-bed reactors (FBR's) and slurry systems. This has resulted in the FLUFIX, IRF, and SLUFIX computer programs. These programs are based on fluid-solids hydrodynamic models and can predict information important to the designer of atmospheric or pressurized bubbling and circulating FBR, fluid catalytic cracking (FCC) and slurry units to guarantee optimum efficiency with minimum release of pollutants into the environment. This latter issue will become of paramount importance with the enactment of the Clean Air Act Amendment (CAAA) of 1995. Solids motion is also the key to understanding erosion processes. Erosion rates in FBR's and pneumatic and slurry components are computed by ANL's EROSION code to predict the potential metal wastage of FBR walls, intervals, feed distributors, and cyclones. Only the FLUFIX and IRF codes will be reviewed in the paper together with highlights of the validations because of length limitations. It is envisioned that one day, these codes with user-friendly pre- and post-processor software and tailored for massively parallel multiprocessor shared memory computational platforms will be used by industry and researchers to assist in reducing and/or eliminating the environmental and economic barriers which limit full consideration of coal, shale, and biomass as energy sources; to retain energy security; and to remediate waste and ecological problems.

The Sleep Elaboration-Awake Pruning (SEAP) theory of memory: long term memories grow in complexity during sleep and undergo selection while awake. Clinical, psychopharmacological and creative implications.

PubMed

Charlton, Bruce G; Andras, Peter

2009-07-01

Long term memory (LTM) systems need to be adaptive such that they enhance an organism's reproductive fitness and self-reproducing in order to maintain their complexity of communications over time in the face of entropic loss of information. Traditional 'representation-consolidation' accounts conceptualize memory adaptiveness as due to memories being 'representations' of the environment, and the longevity of memories as due to 'consolidation' processes. The assumption is that memory representations are formed while an animal is awake and interacting with the environment, and these memories are consolidated mainly while the animal is asleep. So the traditional view of memory is 'instructionist' and assumes that information is transferred from the environment into the brain. By contrast, we see memories as arising endogenously within the brain's LTM system mainly during sleep, to create complex but probably maladaptive memories which are then simplified ('pruned') and selected during the awake period. When awake the LTM system is brought into a more intense interaction with past and present experience. Ours is therefore a 'selectionist' account of memory, and could be termed the Sleep Elaboration-Awake Pruning (or SEAP) theory. The SEAP theory explains the longevity of memories in the face of entropy by the tendency for memories to grow in complexity during sleep; and explains the adaptiveness of memory by selection for consistency with perceptions and previous memories during the awake state. Sleep is therefore that behavioural state during which most of the internal processing of the system of LTM occurs; and the reason sleep remains poorly understood is that its primary activity is the expansion of long term memories. By re-conceptualizing the relationship between memory, sleep and the environment; SEAP provides a radically new framework for memory research, with implications for the measurement of memory and the design of empirical investigations in clinical, psychopharmacological and creative domains. For example, it would be predicted that states of insufficient alertness such as delirium would produce errors of commission (memory distortion and false memories, as with psychotic delusions), while sleep deprivation would produce errors of memory omission (memory loss). Ultimately, the main argument in favour of SEAP is that long term memory must be a complex adaptive system, and complex systems arise, are selected and sustained according to the principles of systems theory; and therefore LTM cannot be functioning in the way assumed by 'representation-consolidation' theories.

Topological supersymmetry breaking: The definition and stochastic generalization of chaos and the limit of applicability of statistics

NASA Astrophysics Data System (ADS)

Ovchinnikov, Igor V.; Schwartz, Robert N.; Wang, Kang L.

2016-03-01

The concept of deterministic dynamical chaos has a long history and is well established by now. Nevertheless, its field theoretic essence and its stochastic generalization have been revealed only very recently. Within the newly found supersymmetric theory of stochastics (STS), all stochastic differential equations (SDEs) possess topological or de Rahm supersymmetry and stochastic chaos is the phenomenon of its spontaneous breakdown. Even though the STS is free of approximations and thus is technically solid, it is still missing a firm interpretational basis in order to be physically sound. Here, we make a few important steps toward the construction of the interpretational foundation for the STS. In particular, we discuss that one way to understand why the ground states of chaotic SDEs are conditional (not total) probability distributions, is that some of the variables have infinite memory of initial conditions and thus are not “thermalized”, i.e., cannot be described by the initial-conditions-independent probability distributions. As a result, the definitive assumption of physical statistics that the ground state is a steady-state total probability distribution is not valid for chaotic SDEs.

Atomistic Simulation of Interfaces in Materials of Solid State Ionics

NASA Astrophysics Data System (ADS)

Ivanov-Schitz, A. K.; Mazo, G. N.

2018-01-01

The possibilities of describing correctly interfaces of different types in solids within a computer experiment using molecular statics simulation, molecular dynamics simulation, and quantum chemical calculations are discussed. Heterophase boundaries of various types, including grain boundaries and solid electrolyte‒solid electrolyte and ionic conductor‒electrode material interfaces, are considered. Specific microstructural features and mechanisms of the ion transport in real heterophase structures (cationic conductor‒metal anode and anionic conductor‒cathode) existing in solid state ionics devices (such as solid-state batteries and fuel cells) are discussed.

Tunable solid state lasers for remote sensing; Proceedings of the Conference, Stanford University, CA, October 1-3, 1984

NASA Technical Reports Server (NTRS)

Byer, R. L. (Editor); Trebino, R. (Editor); Gustafson, E. K. (Editor)

1985-01-01

Papers are presented on solid-state lasers for remote sensing, diode-pumped Nd:YAG lasers, and tunable solid-state-laser systems. Topics discussed include titanium-sapphire tunable laser systems, the performance of slab geometry, and the development of slab lasers. Consideration is given to garnet host solid-state lasers, the growth of lasers and nonlinear materials, and nonlinear frequency conversion and tunable sources.

Nanowire membrane-based nanothermite: towards processable and tunable interfacial diffusion for solid state reactions.

PubMed

Yang, Yong; Wang, Peng-peng; Zhang, Zhi-cheng; Liu, Hui-ling; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

2013-01-01

Interfacial diffusion is of great importance in determining the performance of solid-state reactions. For nanometer sized particles, some solid-state reactions can be triggered accidently by mechanical stress owing to their large surface-to-volume ratio compared with the bulk ones. Therefore, a great challenge is the control of interfacial diffusion for solid state reactions, especially for energetic materials. Here we demonstrate, through the example of nanowire-based thermite membrane, that the thermite solid-state reaction can be easily tuned via the introduction of low-surface-energy coating layer. Moreover, this silicon-coated thermite membrane exhibit controlled wetting behavior ranging from superhydrophilic to superhydrophobic and, simultaneously, to significantly reduce the friction sensitivity of thermite membrane. This effect enables to increase interfacial resistance by increasing the amount of coating material. Indeed, our results described here make it possible to tune the solid-state reactions through the manipulation of interfacial diffusion between the reactants.

Nanowire Membrane-based Nanothermite: towards Processable and Tunable Interfacial Diffusion for Solid State Reactions

NASA Astrophysics Data System (ADS)

Yang, Yong; Wang, Peng-Peng; Zhang, Zhi-Cheng; Liu, Hui-Ling; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

2013-04-01

Interfacial diffusion is of great importance in determining the performance of solid-state reactions. For nanometer sized particles, some solid-state reactions can be triggered accidently by mechanical stress owing to their large surface-to-volume ratio compared with the bulk ones. Therefore, a great challenge is the control of interfacial diffusion for solid state reactions, especially for energetic materials. Here we demonstrate, through the example of nanowire-based thermite membrane, that the thermite solid-state reaction can be easily tuned via the introduction of low-surface-energy coating layer. Moreover, this silicon-coated thermite membrane exhibit controlled wetting behavior ranging from superhydrophilic to superhydrophobic and, simultaneously, to significantly reduce the friction sensitivity of thermite membrane. This effect enables to increase interfacial resistance by increasing the amount of coating material. Indeed, our results described here make it possible to tune the solid-state reactions through the manipulation of interfacial diffusion between the reactants.

Modulation of steady state functional connectivity in the default mode and working memory networks by cognitive load.

PubMed

Newton, Allen T; Morgan, Victoria L; Rogers, Baxter P; Gore, John C

2011-10-01

Interregional correlations between blood oxygen level dependent (BOLD) magnetic resonance imaging (fMRI) signals in the resting state have been interpreted as measures of connectivity across the brain. Here we investigate whether such connectivity in the working memory and default mode networks is modulated by changes in cognitive load. Functional connectivity was measured in a steady-state verbal identity N-back task for three different conditions (N = 1, 2, and 3) as well as in the resting state. We found that as cognitive load increases, the functional connectivity within both the working memory the default mode network increases. To test whether functional connectivity between the working memory and the default mode networks changed, we constructed maps of functional connectivity to the working memory network as a whole and found that increasingly negative correlations emerged in a dorsal region of the posterior cingulate cortex. These results provide further evidence that low frequency fluctuations in BOLD signals reflect variations in neural activity and suggests interaction between the default mode network and other cognitive networks. Copyright © 2010 Wiley-Liss, Inc.

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... Activities; Proposed Collection; Comment Request; State Program Adequacy Determination: Municipal Solid Waste... States. Title: State Program Adequacy Determination: Municipal Solid Waste Landfills (MSWLFs) and Non... 4004(a) and Section 1008(a)(3). Section 4005(c) of RCRA, as amended by the Hazardous Solid Waste...

Development of a HTSMA-Actuated Surge Control Rod for High-Temperature Turbomachinery Applications

NASA Technical Reports Server (NTRS)

Padula, Santo, II; Noebe, Ronald; Bigelow, Glen; Culley, Dennis; Stevens, Mark; Penney, Nicholas; Gaydosh, Darrell; Quackenbush, Todd; Carpenter, Bernie

2007-01-01

In recent years, a demand for compact, lightweight, solid-state actuation systems has emerged, driven in part by the needs of the aeronautics industry. However, most actuation systems used in turbomachinery require not only elevated temperature but high-force capability. As a result, shape memory alloy (SMA) based systems have worked their way to the forefront of a short list of viable options to meet such a technological challenge. Most of the effort centered on shape memory systems to date has involved binary NiTi alloys but the working temperatures required in many aeronautics applications dictate significantly higher transformation temperatures than the binary systems can provide. Hence, a high temperature shape memory alloy (HTSMA) based on NiTiPdPt, having a transformation temperature near 300 C, was developed. Various thermo-mechanical processing schemes were utilized to further improve the dimensional stability of the alloy and it was later extruded/drawn into wire form to be more compatible with envisioned applications. Mechanical testing on the finished wire form showed reasonable work output capability with excellent dimensional stability. Subsequently, the wire form of the alloy was incorporated into a benchtop system, which was shown to provide the necessary stroke requirements of approx.0.125 inches for the targeted surge-control application. Cycle times for the actuator were limited to 4 seconds due to control and cooling constraints but this cycle time was determined to be adequate for the surge control application targeted as the primary requirement was initial actuation of a surge control rod, which could be completed in approximately one second.

States of curiosity modulate hippocampus-dependent learning via the dopaminergic circuit

PubMed Central

Gruber, Matthias J.; Gelman, Bernard D.; Ranganath, Charan

2014-01-01

Summary People find it easier to learn about topics that interest them, but little is known about the mechanisms by which intrinsic motivational states affect learning. We used functional magnetic resonance imaging to investigate how curiosity (intrinsic motivation to learn) influences memory. In both immediate and one-day delayed memory tests, participants showed improved memory for information that they were curious about, and also for incidental material learned during states of high curiosity. FMRI results revealed that activity in the midbrain and the nucleus accumbens was enhanced during states of high curiosity. Importantly, individual variability in curiosity-driven memory benefits for incidental material was supported by anticipatory activity in the midbrain and hippocampus and by functional connectivity between these regions. These findings suggest a link between the mechanisms supporting extrinsic reward motivation and intrinsic curiosity and highlight the importance of stimulating curiosity in order to create more effective learning experiences. PMID:25284006

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Chen, Bingbing; Shen, Yanjiao; Guo, Jianxin; Liu, Baoting; Dai, Xiuhong; Xu, Ying; Mai, Yaohua

2017-11-01

A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.

De novo alloreactive memory CD8+ T cells develop following allogeneic challenge when CNI immunosuppression is delayed.

PubMed

Hart-Matyas, M; Gareau, A J; Hirsch, G M; Lee, T D G

2015-01-01

Allospecific memory T cells are a recognized threat to the maintenance of solid-organ transplants. Limited information exists regarding the development of alloreactive memory T cells when post-transplant immunosuppression is present. The clinical practice of delaying calcineurin inhibitor (CNI) initiation post-transplant may permit the development of a de novo allospecific memory population. We investigated the development of de novo allospecific memory CD8+ T cells following the introduction of CNI immunosuppression in a murine model using allogeneic cell priming. Recipient mice alloprimed with splenocytes from fully mismatched donors received cyclosporine (CyA), initiated at 0, 2, 6, or 10days post-prime. Splenocytes from recipients were analyzed by flow cytometry or enzyme-linked immunosorbent assay for evidence of memory cell formation. Memory and effector CD8+ T cell development was prevented when CyA was initiated at 0day or 2days post-prime (p<0.001), but not 6days post-prime. Following a boost challenge, these memory CD8+ T cells were capable of producing a similarly sized population of secondary effectors as recipients not treated with CyA (p>0.05). Delaying CyA up to 6days or later post-prime permits the development of functional de novo allospecific memory CD8+ T cells. The development of this potentially detrimental T cell population in patients could be prevented by starting CNI immunosuppression early post-transplant. Copyright © 2014 Elsevier B.V. All rights reserved.

Solid state phase change materials for thermal energy storage in passive solar heated buildings

NASA Astrophysics Data System (ADS)

Benson, D. K.; Christensen, C.

1983-11-01

A set of solid state phase change materials was evaluated for possible use in passive solar thermal energy storage systems. The most promising materials are organic solid solutions of pentaerythritol, pentaglycerine and neopentyl glycol. Solid solution mixtures of these compounds can be tailored so that they exhibit solid-to-solid phase transformations at any desired temperature within the range from less than 25 deg to 188 deg. Thermophysical properties such as thermal conductivity, density and volumetric expansion were measured. Computer simulations were used to predict the performance of various Trombe wall designs incorporating solid state phase change materials. Optimum performance was found to be sensitive to the choice of phase change temperatures and to the thermal conductivity of the phase change material. A molecular mechanism of the solid state phase transition is proposed and supported by infrared spectroscopic evidence.

Aging-related episodic memory decline: are emotions the key?

PubMed Central

Kinugawa, Kiyoka; Schumm, Sophie; Pollina, Monica; Depre, Marion; Jungbluth, Carolin; Doulazmi, Mohamed; Sebban, Claude; Zlomuzica, Armin; Pietrowsky, Reinhard; Pause, Bettina; Mariani, Jean; Dere, Ekrem

2013-01-01

Episodic memory refers to the recollection of personal experiences that contain information on what has happened and also where and when these events took place. Episodic memory function is extremely sensitive to cerebral aging and neurodegerative diseases. We examined episodic memory performance with a novel test in young (N = 17, age: 21–45), middle-aged (N = 16, age: 48–62) and aged but otherwise healthy participants (N = 8, age: 71–83) along with measurements of trait and state anxiety. As expected we found significantly impaired episodic memory performance in the aged group as compared to the young group. The aged group also showed impaired working memory performance as well as significantly decreased levels of trait anxiety. No significant correlation between the total episodic memory and trait or state anxiety scores was found. The present results show an age-dependent episodic memory decline along with lower trait anxiety in the aged group. Yet, it still remains to be determined whether this difference in anxiety is related to the impaired episodic memory performance in the aged group. PMID:23378831

Explaining how brain stimulation can evoke memories.

PubMed

Jacobs, Joshua; Lega, Bradley; Anderson, Christopher

2012-03-01

An unexplained phenomenon in neuroscience is the discovery that electrical stimulation in temporal neocortex can cause neurosurgical patients to spontaneously experience memory retrieval. Here we provide the first detailed examination of the neural basis of stimulation-induced memory retrieval by probing brain activity in a patient who reliably recalled memories of his high school (HS) after stimulation at a site in his left temporal lobe. After stimulation, this patient performed a customized memory task in which he was prompted to retrieve information from HS and non-HS topics. At the one site where stimulation evoked HS memories, remembering HS information caused a distinctive pattern of neural activity compared with retrieving non-HS information. Together, these findings suggest that the patient had a cluster of neurons in his temporal lobe that help represent the "high school-ness" of the current cognitive state. We believe that stimulation here evoked HS memories because it altered local neural activity in a way that partially mimicked the normal brain state for HS memories. More broadly, our findings suggest that brain stimulation can evoke memories by recreating neural patterns from normal cognition.

A bio-inspired memory model for structural health monitoring

NASA Astrophysics Data System (ADS)

Zheng, Wei; Zhu, Yong

2009-04-01

Long-term structural health monitoring (SHM) systems need intelligent management of the monitoring data. By analogy with the way the human brain processes memories, we present a bio-inspired memory model (BIMM) that does not require prior knowledge of the structure parameters. The model contains three time-domain areas: a sensory memory area, a short-term memory area and a long-term memory area. First, the initial parameters of the structural state are specified to establish safety criteria. Then the large amount of monitoring data that falls within the safety limits is filtered while the data outside the safety limits are captured instantly in the sensory memory area. Second, disturbance signals are distinguished from danger signals in the short-term memory area. Finally, the stable data of the structural balance state are preserved in the long-term memory area. A strategy for priority scheduling via fuzzy c-means for the proposed model is then introduced. An experiment on bridge tower deformation demonstrates that the proposed model can be applied for real-time acquisition, limited-space storage and intelligent mining of the monitoring data in a long-term SHM system.

Solid-State Cloud Radar System (CRS) Upgrade and Deployment

NASA Technical Reports Server (NTRS)

McLinden, Matt; Heymsfield, Gerald; Li, Lihua; Racette, Paul; Coon, Michael; Venkatesh, Vijay

2015-01-01

The recent decade has brought rapid development in solid-state power amplifier (SSPA) technology. This has enabled the use of solid-state precipitation radar in place of high-power and high-voltage systems such as those that use Klystron or Magnetron transmitters. The NASA Goddard Space Flight Center has recently completed a comprehensive redesign of the 94 gigahertz Cloud Radar System (CRS) to incorporate a solid-state transmitter. It is the first cloud radar to achieve sensitivity comparable to that of a high-voltage transmitter using solid-state. The NASA Goddard Space Flight Center's Cloud Radar System (CRS) is a 94 gigahertz Doppler radar that flies on the NASA ER-2 high-altitude aircraft. The upgraded CRS system utilizes a state-of-the-art solid-state 94 gigahertz power amplifier with a peak transmit power of 30 watts. The modernized CRS system is detailed here with data results from its deployment during the 2014 Integrated Precipitation and Hydrology Experiment (IPHEX).

Solitonic Josephson-based meminductive systems

DOE PAGES

Guarcello, Claudio; Solinas, Paolo; Di Ventra, Massimiliano; ...

2017-04-24

Memristors, memcapacitors, and meminductors represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, is their distinctive fingerprint. This feature endows them with the ability to store and process information on the same physical location, a property that is expected to benefit many applications ranging from unconventional computing to adaptive electronics to robotics. Therefore, it is important to find appropriate memory elements that combine a wide range of memory states, long memory retention times, and protection against unavoidable noise. Although several physical systemsmore » belong to the general class of memelements, few of them combine these important physical features in a single component. Here in this paper, we demonstrate theoretically a superconducting memory based on solitonic long Josephson junctions. Moreover, since solitons are at the core of its operation, this system provides an intrinsic topological protection against external perturbations. We show that the Josephson critical current behaves hysteretically as an external magnetic field is properly swept. Accordingly, long Josephson junctions can be used as multi-state memories, with a controllable number of available states, and in other emerging areas such as memcomputing, i.e., computing directly in/by the memory.« less

Solitonic Josephson-based meminductive systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guarcello, Claudio; Solinas, Paolo; Di Ventra, Massimiliano

Memristors, memcapacitors, and meminductors represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, is their distinctive fingerprint. This feature endows them with the ability to store and process information on the same physical location, a property that is expected to benefit many applications ranging from unconventional computing to adaptive electronics to robotics. Therefore, it is important to find appropriate memory elements that combine a wide range of memory states, long memory retention times, and protection against unavoidable noise. Although several physical systemsmore » belong to the general class of memelements, few of them combine these important physical features in a single component. Here in this paper, we demonstrate theoretically a superconducting memory based on solitonic long Josephson junctions. Moreover, since solitons are at the core of its operation, this system provides an intrinsic topological protection against external perturbations. We show that the Josephson critical current behaves hysteretically as an external magnetic field is properly swept. Accordingly, long Josephson junctions can be used as multi-state memories, with a controllable number of available states, and in other emerging areas such as memcomputing, i.e., computing directly in/by the memory.« less

A memristor-based nonvolatile latch circuit

NASA Astrophysics Data System (ADS)

Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia, Qiangfei; Snider, Gregory S.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2010-06-01

Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

77 FR 46117 - Notice of Inventory Completion: Thomas Burke Memorial Washington State Museum, University of...

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2012-08-02

... Museum professional staff in consultation with representatives of the Coeur D'Alene Tribe of the Coeur D... Inventory Completion: Thomas Burke Memorial Washington State Museum, University of Washington, Seattle, WA... State Museum (Burke Museum) has completed an inventory of human remains and associated funerary objects...

Glass for Solid State Devices

NASA Technical Reports Server (NTRS)

Bailey, R. F.

1982-01-01

Glass film has low intrinsic compressive stress for isolating active layers of magnetic-bubble and other solid-state devices. Solid-state device structure incorporates low-stress glasses as barrier and spacer layers. Glass layers mechanically isolate substrate, conductor, and nickel/iron layers.

Current status of solid-state lithium batteries employing solid redox polymerization cathodes

NASA Astrophysics Data System (ADS)

Visco, S. J.; Doeff, M. M.; Dejonghe, L. C.

1991-03-01

The rapidly growing demand for secondary batteries having high specific energy and power has naturally led to increased efforts in lithium battery technology. Still, the increased safety risks associated with high energy density systems has tempered the enthusiasm of proponents of such systems for use in the consumer marketplace. The inherent advantages of all-solid-state batteries in regards to safety and reliability are strong factors in advocating their introduction to the marketplace. However, the low ionic conductivity of solid electrolytes relative to nonaqueous liquid electrolytes implies low power densities for solid state systems operating at ambient temperatures. Recent advances in polymer electrolytes have led to the introduction of solid electrolytes having conductivities in the range of 10(exp -4)/ohm cm at room temperature; this is still two orders of magnitude lower than liquid electrolytes. Although these improved ambient conductivities put solid state batteries in the realm of practical devices, it is clear that solid state batteries using such polymeric separators will be thin film devices. Fortunately, thin film fabrication techniques are well established in the plastics and paper industry, and present the possibility of continuous web-form manufacturing. This style of battery manufacture should make solid polymer batteries very cost-competitive with conventional secondary cells. In addition, the greater geometric flexibility of thin film solid state cells should provide benefits in terms of the end-use form factor in device design. This work discusses the status of solid redox polymerization cathodes.

Correlation between Mechanical Behavior and Actuator-type Performance of Ni-Ti-Pd High-temperature Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Bigelow, Glen S.; Padula, Santo A., II; Garg, Anita; Noebe, Ronald D.

2007-01-01

High-temperature shape memory alloys in the NiTiPd system are being investigated as lower cost alternatives to NiTiPt alloys for use in compact solid-state actuators for the aerospace, automotive, and power generation industries. A range of ternary NiTiPd alloys containing 15 to 46 at.% Pd has been processed and actuator mimicking tests (thermal cycling under load) were used to measure transformation temperatures, work behavior, and dimensional stability. With increasing Pd content, the work output of the material decreased, while the amount of permanent strain resulting from each load-biased thermal cycle increased. Monotonic isothermal tension testing of the high-temperature austenite and low temperature martensite phases was used to partially explain these behaviors, where a mismatch in yield strength between the austenite and martensite phases was observed at high Pd levels. Moreover, to further understand the source of the permanent strain at lower Pd levels, strain recovery tests were conducted to determine the onset of plastic deformation in the martensite phase. Consequently, the work behavior and dimensional stability during thermal cycling under load of the various NiTiPd alloys is discussed in relation to the deformation behavior of the materials as revealed by the strain recovery and monotonic tension tests.

Entropic uncertainty relation of a two-qutrit Heisenberg spin model in nonuniform magnetic fields and its dynamics under intrinsic decoherence

NASA Astrophysics Data System (ADS)

Zhang, Zuo-Yuan; Wei, DaXiu; Liu, Jin-Ming

2018-06-01

The precision of measurements for two incompatible observables in a physical system can be improved with the assistance of quantum memory. In this paper, we investigate the quantum-memory-assisted entropic uncertainty relation for a spin-1 Heisenberg model in the presence of external magnetic fields, the systemic quantum entanglement (characterized by the negativity) is analyzed as contrast. Our results show that for the XY spin chain in thermal equilibrium, the entropic uncertainty can be reduced by reinforcing the coupling between the two particles or decreasing the temperature of the environment. At zero-temperature, the strong magnetic field can result in the growth of the entropic uncertainty. Moreover, in the Ising case, the variation trends of the uncertainty are relied on the choices of anisotropic parameters. Taking the influence of intrinsic decoherence into account, we find that the strong coupling accelerates the inflation of the uncertainty over time, whereas the high magnetic field contributes to its reduction during the temporal evolution. Furthermore, we also verify that the evolution behavior of the entropic uncertainty is roughly anti-correlated with that of the entanglement in the whole dynamical process. Our results could offer new insights into quantum precision measurement for the high spin solid-state systems.

Correlation between mechanical behavior and actuator-type performance of Ni-Ti-Pd high-temperature shape memory alloys

NASA Astrophysics Data System (ADS)

Bigelow, Glen S.; Padula, Santo A., II; Garg, Anita; Noebe, Ronald D.

2007-04-01

High-temperature shape memory alloys in the NiTiPd system are being investigated as lower cost alternatives to NiTiPt alloys for use in compact solid-state actuators for the aerospace, automotive, and power generation industries. A range of ternary NiTiPd alloys containing 15 to 46 at.% Pd has been processed and actuator mimicking tests (thermal cycling under load) were used to measure transformation temperatures, work behavior, and dimensional stability. With increasing Pd content, the work output of the material decreased, while the amount of permanent strain resulting from each load-biased thermal cycle increased. Monotonic isothermal tension testing of the high-temperature austenite and low temperature martensite phases was used to partially explain these behaviors, where a mismatch in yield strength between the austenite and martensite phases was observed at high Pd levels. Moreover, to further understand the source of the permanent strain at lower Pd levels, strain recovery tests were conducted to determine the onset of plastic deformation in the martensite phase. Consequently, the work behavior and dimensional stability during thermal cycling under load of the various NiTiPd alloys is discussed in relation to the deformation behavior of the materials as revealed by the strain recovery and monotonic tension tests.

Attenuation of neurobehavioral and neurochemical abnormalities in animal model of cognitive deficits of Alzheimer's disease by fermented soybean nanonutraceutical.

PubMed

Bhatt, Prakash Chandra; Pathak, Shruti; Kumar, Vikas; Panda, Bibhu Prasad

2018-02-01

The present study was performed to evaluate the efficacy of nanonutraceuticals (NN) for attenuation of neurobehavioral and neurochemical abnormalities in Alzheimer's disease. Solid-state fermentation of soybean with Bacillus subtilis was performed to produce different metabolites (nattokinase, daidzin, genistin and glycitin and menaquinone-7). Intoxication of rats with colchicine caused impairment in learning and memory which was demonstrated in neurobehavioral paradigms (Morris water maze and passive avoidance) linked with decreased activity of acetylcholinesterase (AChE). NN treatment led to a significant increase in TLT in the retention trials as compared to acquisition trial TLT suggesting an improved learning and memory in rats. Further, treatment of NN caused an increase in the activity of AChE (42%), accompanied with a reduced activity of glutathione (42%), superoxide dismutase (43%) and catalase (41%). It also decreased the level of lipid peroxidation (28%) and protein carbonyl contents (30%) in hippocampus as compared to those treated with colchicine alone, suggesting a possible neuroprotective efficacy of NN. Interestingly, in silico studies also demonstrated an effective amyloid-β and BACE-1 inhibition activity. These findings clearly indicated that NN reversed colchicine-induced behavioral and neurochemical alterations through potent antioxidant activity and could possibly impart beneficial effects in cognitive defects associated with Alzheimer's disease.

GSRP/David Marshall: Fully Automated Cartesian Grid CFD Application for MDO in High Speed Flows

NASA Technical Reports Server (NTRS)

2003-01-01

With the renewed interest in Cartesian gridding methodologies for the ease and speed of gridding complex geometries in addition to the simplicity of the control volumes used in the computations, it has become important to investigate ways of extending the existing Cartesian grid solver functionalities. This includes developing methods of modeling the viscous effects in order to utilize Cartesian grids solvers for accurate drag predictions and addressing the issues related to the distributed memory parallelization of Cartesian solvers. This research presents advances in two areas of interest in Cartesian grid solvers, viscous effects modeling and MPI parallelization. The development of viscous effects modeling using solely Cartesian grids has been hampered by the widely varying control volume sizes associated with the mesh refinement and the cut cells associated with the solid surface. This problem is being addressed by using physically based modeling techniques to update the state vectors of the cut cells and removing them from the finite volume integration scheme. This work is performed on a new Cartesian grid solver, NASCART-GT, with modifications to its cut cell functionality. The development of MPI parallelization addresses issues associated with utilizing Cartesian solvers on distributed memory parallel environments. This work is performed on an existing Cartesian grid solver, CART3D, with modifications to its parallelization methodology.

Effects of Drying Process on an IgG1 Monoclonal Antibody Using Solid-State Hydrogen Deuterium Exchange with Mass Spectrometric Analysis (ssHDX-MS).

PubMed

Moussa, Ehab M; Wilson, Nathan E; Zhou, Qi Tony; Singh, Satish K; Nema, Sandeep; Topp, Elizabeth M

2018-01-03

Lyophilization and spray drying are widely used to manufacture solid forms of therapeutic proteins. Lyophilization is used to stabilize proteins vulnerable to degradation in solution, whereas spray drying is mainly used to prepare inhalation powders or as an alternative to freezing for storing bulk drug substance. Both processes impose stresses that may adversely affect protein structure, stability and bioactivity. Here, we compared lyophilization with and without controlled ice nucleation, and spray drying for their effects on the solid-state conformation and matrix interactions of a model IgG1 monoclonal antibody (mAb). Solid-state conformation and matrix interactions of the mAb were probed using solid-state hydrogen-deuterium exchange with mass spectrometric analysis (ssHDX-MS), and solid-state Fourier transform infrared (ssFTIR) and solid-state fluorescence spectroscopies. mAb conformation and/or matrix interactions were most perturbed in mannitol-containing samples and the distribution of states was more heterogeneous in sucrose and trehalose samples that were spray dried. The findings demonstrate the sensitivity of ssHDX-MS to changes weakly indicated by spectroscopic methods, and support the broader use of ssHDX-MS to probe formulation and process effects on proteins in solid samples.

Joint Quantum Institute |

Science.gov Websites

this award for his wide-ranging experimental physics research accomplishments. From 2015-2017 Fenton is a JQI Fellow and assistant professor of physics, and his chief area of research is experimental starting a new experimental research program focused on quantum memory and quantum information in solid

Changes in Neural Connectivity and Memory Following a Yoga Intervention for Older Adults: A Pilot Study

PubMed Central

Eyre, Harris A.; Acevedo, Bianca; Yang, Hongyu; Siddarth, Prabha; Van Dyk, Kathleen; Ercoli, Linda; Leaver, Amber M.; Cyr, Natalie St.; Narr, Katherine; Baune, Bernhard T.; Khalsa, Dharma S.; Lavretsky, Helen

2016-01-01

Background: No study has explored the effect of yoga on cognitive decline and resting-state functional connectivity. Objectives: This study explored the relationship between performance on memory tests and resting-state functional connectivity before and after a yoga intervention versus active control for subjects with mild cognitive impairment (MCI). Methods: Participants ( ≥ 55 y) with MCI were randomized to receive a yoga intervention or active “gold-standard” control (i.e., memory enhancement training (MET)) for 12 weeks. Resting-state functional magnetic resonance imaging was used to map correlations between brain networks and memory performance changes over time. Default mode networks (DMN), language and superior parietal networks were chosen as networks of interest to analyze the association with changes in verbal and visuospatial memory performance. Results: Fourteen yoga and 11 MET participants completed the study. The yoga group demonstrated a statistically significant improvement in depression and visuospatial memory. We observed improved verbal memory performance correlated with increased connectivity between the DMN and frontal medial cortex, pregenual anterior cingulate cortex, right middle frontal cortex, posterior cingulate cortex, and left lateral occipital cortex. Improved verbal memory performance positively correlated with increased connectivity between the language processing network and the left inferior frontal gyrus. Improved visuospatial memory performance correlated inversely with connectivity between the superior parietal network and the medial parietal cortex. Conclusion:Yoga may be as effective as MET in improving functional connectivity in relation to verbal memory performance. These findings should be confirmed in larger prospective studies. PMID:27060939

Increased numbers of preexisting memory CD8 T cells and decreased T-bet expression can restrain terminal differentiation of secondary effector and memory CD8 T cells.

PubMed

Joshi, Nikhil S; Cui, Weiguo; Dominguez, Claudia X; Chen, Jonathan H; Hand, Timothy W; Kaech, Susan M

2011-10-15

Memory CD8 T cells acquire effector memory cell properties after reinfection and may reach terminally differentiated, senescent states ("Hayflick limit") after multiple infections. The signals controlling this process are not well understood, but we found that the degree of secondary effector and memory CD8 T cell differentiation was intimately linked to the amount of T-bet expressed upon reactivation and preexisting memory CD8 T cell number (i.e., primary memory CD8 T cell precursor frequency) present during secondary infection. Compared with naive cells, memory CD8 T cells were predisposed toward terminal effector (TE) cell differentiation because they could immediately respond to IL-12 and induce T-bet, even in the absence of Ag. TE cell formation after secondary (2°) or tertiary infections was dependent on increased T-bet expression because T-bet(+/-) cells were resistant to these phenotypic changes. Larger numbers of preexisting memory CD8 T cells limited the duration of 2° infection and the amount of IL-12 produced, and consequently, this reduced T-bet expression and the proportion of 2° TE CD8 T cells that formed. Together, these data show that over repeated infections, memory CD8 T cell quality and proliferative fitness is not strictly determined by the number of serial encounters with Ag or cell divisions, but is a function of the CD8 T cell differentiation state, which is genetically controlled in a T-bet-dependent manner. This differentiation state can be modulated by preexisting memory CD8 T cell number and the intensity of inflammation during reinfection. These results have important implications for vaccinations involving prime-boost strategies.

System Safety Management Lessons Learned

DTIC Science & Technology

1989-05-01

DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government . Neither the United States Government nor... Government or any agency thereof, or Battelle Memorial Institute. The views and opinions of authors expressed herein do not necessarily state or reflect...those of the United States Government or any agency thereof. PACIFIC NORTHWEST LABORATORY operated by BATTELLE MEMORIAL INSTITUTE for the UNITED

Slow oscillations orchestrating fast oscillations and memory consolidation.

PubMed

Mölle, Matthias; Born, Jan

2011-01-01

Slow-wave sleep (SWS) facilitates the consolidation of hippocampus-dependent declarative memory. Based on the standard two-stage memory model, we propose that memory consolidation during SWS represents a process of system consolidation which is orchestrated by the neocortical <1Hz electroencephalogram (EEG) slow oscillation and involves the reactivation of newly encoded representations and their subsequent redistribution from temporary hippocampal to neocortical long-term storage sites. Indeed, experimental induction of slow oscillations during non-rapid eye movement (non-REM) sleep by slowly alternating transcranial current stimulation distinctly improves consolidation of declarative memory. The slow oscillations temporally group neuronal activity into up-states of strongly enhanced neuronal activity and down-states of neuronal silence. In a feed-forward efferent action, this grouping is induced not only in the neocortex but also in other structures relevant to consolidation, namely the thalamus generating 10-15Hz spindles, and the hippocampus generating sharp wave-ripples, with the latter well known to accompany a replay of newly encoded memories taking place in hippocampal circuitries. The feed-forward synchronizing effect of the slow oscillation enables the formation of spindle-ripple events where ripples and accompanying reactivated hippocampal memory information become nested into the single troughs of spindles. Spindle-ripple events thus enable reactivated memory-related hippocampal information to be fed back to neocortical networks in the excitable slow oscillation up-state where they can induce enduring plastic synaptic changes underlying the effective formation of long-term memories. Copyright © 2011 Elsevier B.V. All rights reserved.

Sequential behavior and its inherent tolerance to memory faults.

NASA Technical Reports Server (NTRS)

Meyer, J. F.

1972-01-01

Representation of a memory fault of a sequential machine M by a function mu on the states of M and the result of the fault by an appropriately determined machine M(mu). Given some sequential behavior B, its inherent tolerance to memory faults can then be measured in terms of the minimum memory redundancy required to realize B with a state-assigned machine having fault tolerance type tau and fault tolerance level t. A behavior having maximum inherent tolerance is exhibited, and it is shown that behaviors of the same size can have different inherent tolerance.

Strengthening a consolidated memory: the key role of the reconsolidation process.

PubMed

Forcato, Cecilia; Fernandez, Rodrigo S; Pedreira, María E

2014-01-01

The reconsolidation hypothesis posits that the presentation of a specific cue, previously associated with a life event, makes the stored memory pass from a stable to a reactivated state. In this state, memory is again labile and susceptible to different agents, which may either damage or improve the original memory. Such susceptibility decreases over time and leads to a re-stabilization phase known as reconsolidation process. This process has been assigned two biological roles: memory updating, which suggests that destabilization of the original memory allows the integration of new information into the background of the original memory; and memory strengthening, which postulates that the labilization-reconsolidation process strengthens the original memory. The aim of this review is to analyze the strengthening as an improvement obtained only by triggering such process without any other treatment. In our lab, we have demonstrated that when triggering the labilization-reconsolidation process at least once the original memory becomes strengthened and increases its persistence. We have also shown that repeated labilization-reconsolidation processes strengthened the original memory by enlarging its precision, and said reinforced memories were more resistant to interference. Finally, we have shown that the strengthening function is not operative in older memories. We present and discuss both our findings and those of others, trying to reveal the central role of reconsolidation in the modification of stored information. Copyright © 2014 Elsevier Ltd. All rights reserved.

76 FR 24783 - Workers Memorial Day, 2011

Federal Register 2010, 2011, 2012, 2013, 2014

2011-05-02

... Vol. 76 Monday, No. 84 May 2, 2011 Part V The President Proclamation 8658--Workers Memorial Day... 8658 of April 27, 2011 Workers Memorial Day, 2011 By the President of the United States of America A..., and erode our economy. On Workers Memorial Day, we celebrate the improvements in American workplaces...

Reconsolidation of Declarative Memory in Humans

ERIC Educational Resources Information Center

Forcato, Cecilia; Burgos, Valeria L.; Argibay, Pablo F.; Molina, Victor A.; Pedreira, Maria E.; Maldonado, Hector

2007-01-01

The reconsolidation hypothesis states that a consolidated memory could again become unstable and susceptible to facilitation or impairment for a discrete period of time after a reminder presentation. The phenomenon has been demonstrated in very diverse species and types of memory, including the human procedural memory of a motor skill task but not…

Improving Working Memory Efficiency by Reframing Metacognitive Interpretation of Task Difficulty

ERIC Educational Resources Information Center

Autin, Frederique; Croizet, Jean-Claude

2012-01-01

Working memory capacity, our ability to manage incoming information for processing purposes, predicts achievement on a wide range of intellectual abilities. Three randomized experiments (N = 310) tested the effectiveness of a brief psychological intervention designed to boost working memory efficiency (i.e., state working memory capacity) by…

78 FR 48188 - Certain Flash Memory Chips and Products Containing the Same Notice of Receipt of Complaint...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-07

... INTERNATIONAL TRADE COMMISSION [Docket No. 2971] Certain Flash Memory Chips and Products.... International Trade Commission has received a complaint entitled Certain Flash Memory Chips and Products... sale within the United States after importation of certain flash memory chips and products containing...

Thin Rechargeable Batteries for CMOS SRAM Memory Protection

NASA Technical Reports Server (NTRS)

Crouse, Dennis N.

1993-01-01

New rechargeable battery technology is described and compared with classical primary battery back-up of SRAM PC cards. Thin solid polymer electrolyte cells with the thickness of TSOP memory components (1 mm nominal, 1.1 mm max) and capacities of 14 mAh/sq cm can replace coin cells. The SRAM PC cards with permanently installed rechargeable cells and optional electrochromic low battery voltage indicators will free the periodic PC card user from having to 'feed' their PC cards with coin cells and will allow a quick visual check of stored cards for their battery voltage status.

KSC-2015-1214

NASA Image and Video Library

2015-01-28

CAPE CANAVERAL, Fla. – NASA’s Kennedy Space Center in Florida paid tribute to the crews of Apollo 1 and space shuttles Challenger and Columbia, as well as other NASA astronauts who lost their lives while furthering the cause of exploration and discovery, during the agency's Day of Remembrance, Jan. 28. A wreath-laying ceremony was held at the Space Mirror Memorial located in the Kennedy Space Center Visitor Complex. Behind the memorial, the full-size mock-up of the external fuel tank and solid rocket boosters mark the entrance to the Space Shuttle Atlantis exhibit. Photo credit: NASA/Jim Grossmann

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

NASA Astrophysics Data System (ADS)

Sedghi, N.; Li, H.; Brunell, I. F.; Dawson, K.; Potter, R. J.; Guo, Y.; Gibbon, J. T.; Dhanak, V. R.; Zhang, W. D.; Zhang, J. F.; Robertson, J.; Hall, S.; Chalker, P. R.

2017-03-01

The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed to neutralization of electronic defect levels associated with oxygen vacancies. The density functional simulations with the screened exchange hybrid functional approximation show that the incorporation of nitrogen dopant atoms in the oxide network removes the O vacancy midgap defect states, thus nullifying excess defects and eliminating alternative conductive paths. By effectively reducing the density of vacancy-induced defect states through N doping, 3-bit multilevel cell switching is demonstrated, consisting of eight distinctive resistive memory states achieved by either controlling the set current compliance or the maximum voltage during reset. Nitrogen doping has a threefold effect: widening the switching memory window to accommodate the more intermediate states, improving the stability of states, and providing a gradual reset for multi-level cell switching during reset. The N-doped Ta2O5 devices have relatively small set and reset voltages (< 1 V) with reduced variability due to doping.

System level mechanisms of adaptation, learning, memory formation and evolvability: the role of chaperone and other networks.

PubMed

Gyurko, David M; Soti, Csaba; Stetak, Attila; Csermely, Peter

2014-05-01

During the last decade, network approaches became a powerful tool to describe protein structure and dynamics. Here, we describe first the protein structure networks of molecular chaperones, then characterize chaperone containing sub-networks of interactomes called as chaperone-networks or chaperomes. We review the role of molecular chaperones in short-term adaptation of cellular networks in response to stress, and in long-term adaptation discussing their putative functions in the regulation of evolvability. We provide a general overview of possible network mechanisms of adaptation, learning and memory formation. We propose that changes of network rigidity play a key role in learning and memory formation processes. Flexible network topology provides ' learning-competent' state. Here, networks may have much less modular boundaries than locally rigid, highly modular networks, where the learnt information has already been consolidated in a memory formation process. Since modular boundaries are efficient filters of information, in the 'learning-competent' state information filtering may be much smaller, than after memory formation. This mechanism restricts high information transfer to the 'learning competent' state. After memory formation, modular boundary-induced segregation and information filtering protect the stored information. The flexible networks of young organisms are generally in a 'learning competent' state. On the contrary, locally rigid networks of old organisms have lost their 'learning competent' state, but store and protect their learnt information efficiently. We anticipate that the above mechanism may operate at the level of both protein-protein interaction and neuronal networks.

Development of subjective recollection: understanding of and introspection on memory States.

PubMed

Ghetti, Simona; Mirandola, Chiara; Angelini, Laura; Cornoldi, Cesare; Ciaramelli, Elisa

2011-01-01

The development of subjective recollection was investigated in participants aged 6-18 years. In Experiment 1 (N = 90), age-related improvements were found in understanding of the subjective experience of recollection, although robust levels of understanding were observed even in the youngest group. In Experiment 2 (N = 100), age-related differences were found in subjective recollection during a memory task, suggesting development not only in the ability to reflect on memory states, but also in the informational basis of subjective recollection. Lower understanding of memory states was associated with increased propensity to claim recollection. These results indicate that subjective recollection develops considerably during childhood and suggest that the development of metamemory supports this capacity. © 2011 The Authors. Child Development © 2011 Society for Research in Child Development, Inc.

Identifying major depressive disorder using Hurst exponent of resting-state brain networks.

PubMed

Wei, Maobin; Qin, Jiaolong; Yan, Rui; Li, Haoran; Yao, Zhijian; Lu, Qing

2013-12-30

Resting-state functional magnetic resonance imaging (fMRI) studies of major depressive disorder (MDD) have revealed abnormalities of functional connectivity within or among the resting-state networks. They provide valuable insight into the pathological mechanisms of depression. However, few reports were involved in the "long-term memory" of fMRI signals. This study was to investigate the "long-term memory" of resting-state networks by calculating their Hurst exponents for identifying depressed patients from healthy controls. Resting-state networks were extracted from fMRI data of 20 MDD and 20 matched healthy control subjects. The Hurst exponent of each network was estimated by Range Scale analysis for further discriminant analysis. 95% of depressed patients and 85% of healthy controls were correctly classified by Support Vector Machine with an accuracy of 90%. The right fronto-parietal and default mode network constructed a deficit network (lower memory and more irregularity in MDD), while the left fronto-parietal, ventromedial prefrontal and salience network belonged to an excess network (longer memory in MDD), suggesting these dysfunctional networks may be related to a portion of the complex of emotional and cognitive disturbances. The abnormal "long-term memory" of resting-state networks associated with depression may provide a new possibility towards the exploration of the pathophysiological mechanisms of MDD. © 2013 Elsevier Ireland Ltd. All rights reserved.

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

NASA Astrophysics Data System (ADS)

Gao, Shuang; Yang, Guang; Cui, Bin; Wang, Shouguo; Zeng, Fei; Song, Cheng; Pan, Feng

2016-06-01

Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future.Stateful logic circuits based on next-generation nonvolatile memories, such as magnetoresistance random access memory (MRAM), promise to break the long-standing von Neumann bottleneck in state-of-the-art data processing devices. For the successful commercialisation of stateful logic circuits, a critical step is realizing the best use of a single memory cell to perform logic functions. In this work, we propose a method for implementing all 16 Boolean logic functions in a single MRAM cell, namely a magnetoresistance (MR) unit. Based on our experimental results, we conclude that this method is applicable to any MR unit with a double-hump-like hysteresis loop, especially pseudo-spin-valve magnetic tunnel junctions with a high MR ratio. Moreover, after simply reversing the correspondence between voltage signals and output logic values, this method could also be applicable to any MR unit with a double-pit-like hysteresis loop. These results may provide a helpful solution for the final commercialisation of MRAM-based stateful logic circuits in the near future. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03169b

Rational coating of Li7P3S11 solid electrolyte on MoS2 electrode for all-solid-state lithium ion batteries

NASA Astrophysics Data System (ADS)

Xu, R. C.; Wang, X. L.; Zhang, S. Z.; Xia, Y.; Xia, X. H.; Wu, J. B.; Tu, J. P.

2018-01-01

Large interfacial resistance between electrode and electrolyte limits the development of high-performance all-solid-state batteries. Herein we report a uniform coating of Li7P3S11 solid electrolyte on MoS2 to form a MoS2/Li7P3S11 composite electrode for all-solid-state lithium ion batteries. The as-synthesized Li7P3S11 processes a high ionic of 2.0 mS cm-1 at room temperature. Due to homogeneous union and reduced interfacial resistance, the assembled all-solid-state batteries with the MoS2/Li7P3S11 composite electrode exhibit higher reversible capacity of 547.1 mAh g-1 at 0.1 C and better cycling stability than the counterpart based on untreated MoS2. Our study provides a new reference for design/fabrication of advanced electrode materials for high-performance all-solid-state batteries.

Advanced solid-state NMR spectroscopy of natural organic matter

USDA-ARS?s Scientific Manuscript database

Solid-state NMR is essential for the characterization of natural organic matter (NOM) and is gaining importance in geosciences and environmental sciences. This review is intended to highlight advanced solid-state NMR techniques, especially the systematic approach to NOM characterization, and their ...

Quantitative secondary electron detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Jyoti; Joy, David C.; Nayak, Subuhadarshi

Quantitative Secondary Electron Detection (QSED) using the array of solid state devices (SSD) based electron-counters enable critical dimension metrology measurements in materials such as semiconductors, nanomaterials, and biological samples (FIG. 3). Methods and devices effect a quantitative detection of secondary electrons with the array of solid state detectors comprising a number of solid state detectors. An array senses the number of secondary electrons with a plurality of solid state detectors, counting the number of secondary electrons with a time to digital converter circuit in counter mode.

Architecture for Multiple Interacting Robot Intelligences

NASA Technical Reports Server (NTRS)

Peters, Richard Alan, II (Inventor)

2008-01-01

An architecture for robot intelligence enables a robot to learn new behaviors and create new behavior sequences autonomously and interact with a dynamically changing environment. Sensory information is mapped onto a Sensory Ego-Sphere (SES) that rapidly identifies important changes in the environment and functions much like short term memory. Behaviors are stored in a database associative memory (DBAM) that creates an active map from the robot's current state to a goal state and functions much like long term memory. A dream state converts recent activities stored in the SES and creates or modifies behaviors in the DBAM.