Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Gas Source Molecular Beam Epitaxial Growth of GaN

DTIC Science & Technology

1992-11-25

identify by block number) FIELW GROUP SUB-GROUP 19. ABSTRACT (Continue on reverse if necessary and Identify by block number) Aluminum gallium nitride (AlGaN...AND TASK OBJECTIVES Aluminum gallium nitride (AIGaN) has long been recognized as a promising radiation hard optoelectronic material. AIGaN has a wide...Efficient, pure, low temperature sources for the gas source molecular beam epitaxial (GSMBE) growth of aluminum gallium nitride will essentially

InAs-based Hterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Ordered structure of FeGe2 formed during solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S. C.

2018-05-01

Fe3Si /Ge (Fe ,Si ) /Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si ). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P 4 m m . This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si . We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.

Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhu, Zhongyunshen; Song, Yuxin; Zhang, Zhenpu; Sun, Hao; Han, Yi; Li, Yaoyao; Zhang, Liyao; Xue, Zhongying; Di, Zengfeng; Wang, Shumin

2017-09-01

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ˜180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ˜180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

DTIC Science & Technology

2012-01-01

this paper were grown by solid- source molecular beam epitaxy (MBE). Here, the use of a lower- case letter (p) for the narrow bandgap layer and upper...electron and hole mobilities. High electron mobil- ity transistors ( HEMTs ) fabricated from these materials have shown good operating characteristics [1,2...Furthermore, the first monolithic microwave integrated circuits (MMICs) fabricated using 6.1 Å based HEMTs have been demonstrated [3]. New mate- rials

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

DOE PAGES

Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

2017-09-01

We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

Advanced Shutter Control for a Molecular Beam Epitaxy Reactor

DTIC Science & Technology

An open-source hardware and software-based shutter controller solution was developed that communicates over Ethernet with our original equipment...manufacturer (OEM) molecular beam epitaxy (MBE) reactor control software. An Arduino Mega microcontroller is the used for the brain of the shutter... controller , while a custom-designed circuit board distributes 24-V power to each of the 16 shutter solenoids available on the MBE. Using Ethernet

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

NASA Technical Reports Server (NTRS)

Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

1988-01-01

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Electrode structure of a compact microwave driven capacitively coupled atomic beam source

NASA Astrophysics Data System (ADS)

Shimabukuro, Yuji; Takahashi, Hidenori; Wada, Motoi

2018-01-01

A compact magnetic field free atomic beam source was designed, assembled and tested the performance to produce hydrogen and nitrogen atoms. A forced air-cooled solid-state microwave power supply at 2.45 GHz frequency drives the source up to 100 W through a coaxial transmission cable coupled to a triple stub tuner for realizing a proper matching condition to the discharge load. The discharge structure of the source affected the range of operation pressure, and the pressure was reduced by four orders of magnitude through improving the electrode geometry to enhance the local electric field intensity. Optical emission spectra of the produced plasmas indicate production of hydrogen and nitrogen atoms, while the flux intensity of excited nitrogen atoms monitored by a surface ionization type detector showed the signal level close to a source developed for molecular beam epitaxy applications with 500 W RF power.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

PubMed Central

2011-01-01

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

PubMed

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Elimination of oval defects in epilayers by using chemical beam epitaxy

NASA Astrophysics Data System (ADS)

Tsang, W. T.

1985-06-01

One ubiquitous problem that continues to haunt over molecular beam epitaxy (MBE) persistently throughout all these year and still without a good controllable solution is the presence of oval defects in gallium-containing compound semiconductor epilayers. While these defects have not presented major problems for discrete devices, they are likely to be a serious obstacle for integrated circuit applications. We showed that oval defects were present in GaAs and In0.53Ga0.47As epilayers grown by conventional MBE process using elemental Ga and In as group III sources, and either solid As4 or thermally cracked As4 from gas mixtures of trimethylarsine and hydrogen. On the other hand, the use of the chemical beam epitaxy in which the Ga and In were derived by thermal pyrolysis of their metal alkyls at the heated substrate surface resulted reproducibly in epilayers free of oval defects over the entire substrate surface of ˜8 cm diameter (limited by the substrate holder size). On the basis of the present results it is evident that the oval defects were related to the use of elemental Ga melt as the evaporant in conventional MBE.

A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Hasan, M.-A.; Knall, J.; Barnett, S. A.; Rockett, A.; Sundgren, J.-E.

1987-10-01

A single-grid electron-impact ultrahigh vacuum (UHV) compatible low-energy ion gun capable of operating with a low vapor pressure solid source material such as In is presented. The gun consists of a single chamber which integrates the functions of an effusion cell, a vapor transport tube, and a glow discharge ionizer. The initial results of experiments designed to study the role of ion/surface interactions during nucleation and the early stages of crystal growth in UHV revealed that, for deposition on amorphous substrates, the use of a partially ionized In(+) beam resulted in a progressive shift towards larger island sizes, a decreased rate of secondary nucleation, and a more uniform island size distribution.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Electronic Transport in Ultrathin Heterostructures.

DTIC Science & Technology

1981-10-01

heterostructures, superlattices, diffusion-enhanced disorder, transport properties, molecular beam epitaxy (MBE), photoluminescence, optical absorption...tion of single and multilayer GatlAs/GaAs heterostructures by metalorganic chemical vapor deposition (MJCVD) and molecular beam epitaxy (MBE) has...fundamental nature of these clusters and their relevance to other epitaxial techniques such as molecular beam epitaxy (MBE). To further varify or

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

NASA Astrophysics Data System (ADS)

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-12-01

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1989-01-01

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lee, J. H.; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

2016-01-01

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

PubMed

Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

2016-01-01

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

All Ultra-High Vacuum In-Situ Growth & Processing Approaches to Realization of Semiconductor Nanostructure Arrays

DTIC Science & Technology

1997-05-15

Quantum Box/Dot, Strained Epitaxy , 3D islands, Patterned Substrates, Molecular Beam Epitaxy Focused Ion Beam , In-Situ Processing, Quantum Box Lasers...Grown on Planar and Patterned GaAs(100) Substrates by Molecular Beam Epitaxy ", J. Vac. Sei. Technol. B13, 642(1995) 5. A. Madhukar, P. Chen, Q. Xie...Formation and Vertical Self-Organization on GaAs(lOO) via Molecular Beam Epitaxy ", Paper presented at MRS Spring 󈨣 Meeting (Apr. 17-21, 1995, San

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

2014-12-01

Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

DOE PAGES

A. T. Bollinger; Wu, J.; Bozovic, I.

2016-03-15

In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

DTIC Science & Technology

2012-11-20

InGaN growth where an intermediate regime does not exist.40 Considering GaN molecular - beam epitaxy (MBE) growth phase diagrams such as those...1009 (2007). 44 S. D. Burnham, Improved Understanding and Control of Magnesium-Doped Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy , in...reported using a modified form of molecular beam epitaxy (MBE) called Metal-Modulated Epitaxy (MME).11, 12 The details of this shuttered technique

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

NASA Astrophysics Data System (ADS)

Sze, Theresa; Mahbobzadeh, A. M.; Cheng, Julian; Hersee, Stephen D.; Osinski, Marek; Brueck, Steven R. J.; Malloy, Kevin J.

1993-06-01

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

DOE PAGES

Lee, J. H.; Tung, I. C.; Chang, S. -H.; ...

2016-01-05

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-raymore » and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Finally, additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.« less

Nitrogen Plasma Optimization for High-Quality Dilute Nitrides

DTIC Science & Technology

2005-02-01

Available online 1 February 2005Abstract Growth of GaInNAs by molecular beam epitaxy (MBE) generally requires a nitrogen plasma, which complicates growth...InGaAs and InGaAsP lasers. This paper addresses several of the challenges of plasma-assisted molecular beam epitaxy (MBE) of high-quality dilute nitrides...A.L. Holmes, Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy , J. Vac. Sci. Technol. B, in press.

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Phase-Locked Semiconductor Quantum Well Laser Arrays.

DTIC Science & Technology

1987-03-01

heated monocrystalline substrate. 149 APPENDIX B. A TECHNOLOGICAL APPENDIX 150 The general topic of molecular beam epitaxy (MBE) of compound semi...APPENDIX B. A TECHNOLOGICAL APPENDIX 151 - MONOCRYSTALLINE GaAs SUBSTRATE MOLECULAR / BEAMS...for 30 minutes at 300 C. During this time, the growth chamber cryo- panel is cooled with liquid nitrogen and the sources in the effusion cells are

High throughput vacuum chemical epitaxy

NASA Astrophysics Data System (ADS)

Fraas, L. M.; Malocsay, E.; Sundaram, V.; Baird, R. W.; Mao, B. Y.; Lee, G. Y.

1990-10-01

We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated at one time. Our vacuum chemical epitaxy reactor closely resembles a molecular beam epitaxy system in that wafers are loaded into a stainless steel vacuum chamber through a load chamber. Also as in MBE, arsenic vapors are supplied as reactant by heating solid arsenic sources thereby avoiding the use of arsine. However, in our VCE reactor, a large number of wafers are coated at one time in a vacuum system by the substitution of Group III alkyl sources for the elemental metal sources traditionally used in MBE. Higher wafer throughput results because in VCE, the metal-alkyl sources for Ga, Al, and dopants can be mixed at room temperature and distributed uniformly though a large area injector to multiple substrates as a homogeneous array of mixed element molecular beams. The VCE reactor that we have built and that we shall describe here uniformly deposits films on 7 inch diameter substrate platters. Each platter contains seven two inch or three 3 inch diameter wafers. The load chamber contains up to nine platters. The vacuum chamber is equipped with two VCE growth zones and two arsenic ovens, one per growth zone. Finally, each oven has a 1 kg arsenic capacity. As of this writing, mirror smooth GaAs films have been grown at up to 4 μm/h growth rate on multiple wafers with good thickness uniformity. The background doping is p-type with a typical hole concentration and mobility of 1 × 10 16/cm 3 and 350 cm 2/V·s. This background doping level is low enough for the fabrication of MESFETs, solar cells, and photocathodes as well as other types of devices. We have fabricated MESFET devices using VCE-grown epi wafers with peak extrinsic transconductance as high as 210 mS/mm for a threshold voltage of - 3 V and a 0.6 μm gate length. We have also recently grown AlGaAs epi layers with up to 80% aluminum using TEAl as the aluminum alkyl source. The AlGaAs layer thickness and aluminum content uniformity appear excellent.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

PubMed Central

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

Abstract High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. PMID:28740558

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers.

PubMed

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

High-quality thermoelectric La 0.2 Sr 0.8 TiO 3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO 3 (001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10 -4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO 3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

PubMed Central

Steele, J. A.; Lewis, R. A.; Horvat, J.; Nancarrow, M. J. B.; Henini, M.; Fan, D.; Mazur, Y. I.; Schmidbauer, M.; Ware, M. E.; Yu, S.-Q.; Salamo, G. J.

2016-01-01

Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys. PMID:27377213

Low Resistance, Unannealed ohmic Contacts to n-Type InAs0.66Sb0.34

DTIC Science & Technology

2007-11-08

by solid-source molecular beam epitaxy (MBE). Structures consisted of a semi-insulating GaAs substrate, a 1.0 mm undoped AlSb buffer, and 1.0 mm n...6.1 Å-based HEMTs have been demonstrated recently [1, 2]. New materials such as InxGa1-xSb, InAsySb1-y, and InxAl1-xAsySb1-y, with lattice constants...speed operation [3]. Initial work on HEMTs and InAs heterojunction bipolar transistors (HBTs) has been promising [1, 4–7], but the fabrication of 6.2 Å

Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

DTIC Science & Technology

2015-04-22

Materials, Heterostrucuture Semiconductor, Light Emitting Devices, Molecular Beam Epitaxy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy ...designed structures were grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with the low-temperature growth technique. (The Ge-buffer

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of themore » observed device performance enhancements.« less

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zheng, Xiantong; Liang, Hongwei; Wang, Ping; Sun, Xiaoxiao; Chen, Zhaoying; Wang, Tao; Sheng, Bowen; Wang, Yixin; Chen, Ling; Wang, Ding; Rong, Xin; Li, Mo; Zhang, Jian; Wang, Xinqiang

2018-01-01

Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive X-ray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content.

Twenty years of molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications

DTIC Science & Technology

2005-01-01

molecular beam epitaxy , semiconductors, finite element method, modeling and simulation, oxidation furnace 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...Patterson Air Force Base). Device material growth was accomplished by means of molecular beam epitaxy (MBE) using a Varian GENII MBE system owned by the...grown by molecular beam epitaxy on a GaAs substrate. Vertical posts, with square and circular cross sections ranging in size from 5 to 40 microns

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

NASA Technical Reports Server (NTRS)

Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

Semiconductor Laser Joint Study Program with Rome Laboratory

DTIC Science & Technology

1994-09-01

VCSELs 3.3 Laser Wafer Growth by Molecular Beam Epitaxy 8 The VCSEL structures were grown by molecular beam ...cavity surface emittimg lasers ( VCSEL ), Optical 40 interconnects, Moelcular beam epitaxy It CECOOE 17. SECURfTY CLASWICATION SECURFlY CLASSIFICATION 1 Q...7 3.3 Laser Wafer Growth by Molecular Beam Epitax. ............ 8 3.4 VCSEL Fabrication Process ................................................

Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

DTIC Science & Technology

2013-09-01

Optimization of the Nonradiative Lifetime of Molecular- Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH) by P...it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6660 September 2013 Optimization of the Nonradiative ...REPORT TYPE Final 3. DATES COVERED (From - To) FY2013 4. TITLE AND SUBTITLE Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1994-04-09

surface temperature across the wafer during the growth of the cavity spacer region using the fact that the molecular beam epitaxy (MBE) growth of GaAs...substrate surface temperature across the wafer during the growth of the cavity spacer region. Using the fact that, during an molecular beam epitaxy (MBE...K. Bacher and J.S. Harris, "Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy ," to be presented

Optoelectronic Materials Center, A Collaborative Program Including University of New Mexico, Stanford University and California Institute of Technology

DTIC Science & Technology

1992-06-30

in the film. Ion-assisted molecular beam epitaxy is one of a class of techniques that allow modification growth kinetics during heteroepitaxy, with...the potential for novel means of misfit accommodation. In the last quarter, using ion-assisted molecular beam epitaxy , we have demonstrated 1. Reduction...shown in Figure 1. The results are compared with single quantum well material grown by Molecular Beam Epitaxy (MBE) previously. The optimum cavity

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

PubMed Central

Baiutti, Federico; Christiani, Georg

2014-01-01

Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua

2017-11-01

Ga2O3 with a wide bandgap of ˜ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It's also demonstrated that the CuGa2O4 film has a bandgap of ˜ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Aaron Ptak | NREL

Science.gov Websites

doping of III-Nitride materials grown by molecular beam epitaxy (MBE). He joined NREL after graduation in (0001) GaN Growth by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy, A.J. Ptak, M.R. Millecchia . Phys. Lett. 77, 2479 (2000). Magnesium Incorporation in GaN Grown by rf-Plasma Assisted Molecular Beam

A high-temperature single-photon source from nanowire quantum dots.

PubMed

Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

2008-12-01

We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lazarenko, A. A.; Berezovskaya, T. N.; Denisov, D. V.; Sobolev, M. S.; Pirogov, E. V.; Nikitina, E. V.

2017-11-01

This article discusses the process of preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. The method of preparation of Si (100) and Si (111) substrates was developed. This method provides reproducible high-quality silicon surface for molecular-beam epitaxy of Si-GaP heterostructures. As a result, it managed to reduce the eviction oxide temperature below 800 °C, which is an important parameter for the MBE technology.

Enhanced Hole Mobility and Density in GaSb Quantum Wells

DTIC Science & Technology

2013-01-01

Keywords: Molecular beam epitaxy Quantum wells Semiconducting III–V materials Field-effect transistors GaSb a b s t r a c t Modulation-doped quantum wells...QWs) of GaSb clad by AlAsSb were grown by molecular beam epitaxy on InP substrates. By virtue of quantum confinement and compressive strain of the...heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using a Riber Compact 21T MBE system. A cross

Chip-Scale Controlled Storage All-Optical Memory

DTIC Science & Technology

2007-02-01

half width at half maximum KHZ kilo Hertz KK Kramers-Kronig LH light hole MBE molecular beam epitaxy MHz mega Hertz MZI Mach-Zehnder...waveguide geometry. The sample used in experiments 1 and 2 consists of 15 GaAs (135Å)/Al0.3Ga0.7As(150 Å) QWs grown by molecular beam epitaxy (MBE...We developed the capability to grow GaAs QWs on (110)-oriented substrates using molecular beam epitaxy in a very short amount of time. The very

High-Temperature Spintronic Devices and Circuits in Absence of Magnetic Field

DTIC Science & Technology

2012-04-23

non-equilibrium Green’s function (NEGF) formalism. • Molecular beam epitaxy (MBE) growth of ferromagnetic metals (Fe, MnAs) and...measured for two diode injection currents in the Faraday geometry. The quantum dot microcavity device was grown by molecular beam epitaxy with a low...channel (10 nm, lxlOl9j Mn-doped) / undoped-AlAs (1 nm) tunnel barrier / undoped-GaAs (0.5 nm) / MnAs (25 nm) were grown by molecular beam epitaxy (MBE

Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yacob, M.; Reithmaier, J. P.; Benyoucef, M., E-mail: m.benyoucef@physik.uni-kassel.de

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.

An atomic carbon source for high temperature molecular beam epitaxy of graphene.

PubMed

Albar, J D; Summerfield, A; Cheng, T S; Davies, A; Smith, E F; Khlobystov, A N; Mellor, C J; Taniguchi, T; Watanabe, K; Foxon, C T; Eaves, L; Beton, P H; Novikov, S V

2017-07-26

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

DTIC Science & Technology

2008-01-01

Available online 18 October 2008 PACS: 72.80.Ey 73.61.Ey 81.05.Ea 85.30.Tv Keywords: A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III–V...were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1x. The composition of the...composition in order to control the strain in the GaSb quantum well. The heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi

Study of Spin Splitting in GaN/AlGaN Quantum Wells

DTIC Science & Technology

2009-05-11

plasma-assisted molecular - beam epitaxy ”, Jap. J. Appl. Phys. 47, 891 (2008), we have grown M-plane GaN films with self-assembled C-plane GaN nanopillars...on a γ-LiAlO2 substrate by plasma-assisted molecular - beam epitaxy . The diameters of the basal plane of the nanopillars are about 200 to 900 nm and...Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy ”, Appl. Phys. Lett. 92 pp.202106 (2008), we studied the

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

DTIC Science & Technology

2010-01-01

Heterostructure epitaxial material growth was performed by RF plasma-assisted molecular - beam epitaxy (MBE) on a 2-in. semi- insulating 4H SiC wafer. From... beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs . J Cryst Growth 2003;251:481–6. [25] Storm DF, Katzer DS, Binari SC, Glaser ER...Shanabrook BV, Roussos JA. Reduction of buffer layer conduction near plasma-assisted molecular - beam epitaxy grown GaN/AlN interfaces by beryllium

Tellurium n-type doping of highly mismatched amorphous GaN 1-xAs x alloys in plasma-assisted molecular beam epitaxy

DOE PAGES

Novikov, S. V.; Ting, M.; Yu, K. M.; ...

2014-10-01

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers hasmore » been determined.« less

Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy

NASA Astrophysics Data System (ADS)

Halder, Nripendra N.; Kelrich, Alexander; Cohen, Shimon; Ritter, Dan

2017-11-01

We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.

Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy.

PubMed

Halder, Nripendra N; Kelrich, Alexander; Cohen, Shimon; Ritter, Dan

2017-11-17

We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.

Optoelectronics Material Center: A Collaborative Program Including Center for High Technology Materials of the University of New Mexico, Stanford University, California Institute of Technology

DTIC Science & Technology

1992-09-01

SI by Ion-Assisted Molecular Beam Enltaxy Currently there is considerable interest in misfit accommodation in hetero- epitaxy for integration of device...of misfit accommodation. In the last quarter, we have demonstrated, using ion-assisted molecular beam epitaxy : * Reduction of dislocation density in... beam epitaxy (MOMBE) hardware, and demonstration of state-of-the-art MOMBE AlGaAs (1990). MOCVD Materials Growth Facilities and Eauipment Extension to

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohtani, K.; Fujita, K.; Ohno, H.

2005-11-21

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Very thin, high Ge content Si 0.3Ge 0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate

NASA Astrophysics Data System (ADS)

Myronov, M.; Shiraki, Y.

2007-04-01

Growth procedure and excellent properties of very thin 240 nm thick, 95% relaxed, high Ge content Si 0.3Ge 0.7 buffer grown on SOI(0 0 1) substrate are demonstrated. All epilayers of the newly developed Si 0.3Ge 0.7/SOI(0 0 1) variable-temperature virtual substrate were grown in a single process by solid-source molecular beam epitaxy. Surface analysis of grown samples revealed smooth, cross-hatch free surface with low root mean square surface roughness of 0.9 nm and low threading dislocations density of 5×10 4 cm -2.

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slobodskyy, T.; Ruester, C.; Fiederling, R.

2004-12-20

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Delayed Shutters For Dual-Beam Molecular Epitaxy

NASA Technical Reports Server (NTRS)

Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

1989-01-01

System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Tunable Solid-State Quantum Memory Using Rare-Earth-Ion-Doped Crystal, Nd(3+):GaN

DTIC Science & Technology

2017-04-01

by plasma-assisted molecular beam epitaxy in a modular Gen II reactor using liquid gallium, solid Nd, and a nitrogen plasma. The photoluminescence (PL...provide a tunable memory. To vary the applied field, we designed and grew a series of Nd-doped GaN p-i-n structures, strain- balanced superlattice...27 Fig. 23 Electric field vs. GaN well/ AlxGa(1-x)N barrier thickness for strain- balanced superlattice (SBSL) structures with

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, Darrell G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong; Singh, Rakesh K.; Xi, Xiaoxing

2017-12-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+δ, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Tiedje, H. F.; Brodie, D. E.

2000-05-01

A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

Physics and Technology of III-V Pseudomorphic Structures

DTIC Science & Technology

1991-03-01

AIISIRACT Iex~am uowo,, We have developed an in situ technique for determining the group -V composition in gas-source molecular beam epitaxy (GSMBE...growth of mixed group -V compounds, such as GaAsP, InAsP, and InGaAsP. The in situ technique consists of monitoring the intensity oscillations of ’ group -V...epitaxy ........................................................................... 58 13. A study of group -V desorption from InP and InAs by reflection

Fabrication of precision high quality facets on molecular beam epitaxy material

DOEpatents

Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

2001-01-01

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Molecular Beam Epitaxial Materials Study for Microwave and Millimeter Wave Devices.

DTIC Science & Technology

1978-10-01

competing for domi- nance with any given set of system components and deposition sequence. The evidence indicates that BeO substrate heaters contribute...34Single- Tranverse -Mode Injection Lasers with Embedded Stripe Layer Grown by Molecular Beam Epitaxy," Appl. Phys. Lett., 29, pp. 164-166 (1976). 178

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1993-12-09

during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate... molecular beam epitaxy (MBE) crystal growth, the GaAs growth rate is highly sensitive to the substrate temperature above 650"C (2], a GaAs/AIGaAs... epitaxial growth technique to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

NASA Technical Reports Server (NTRS)

D'Anterroches, Cecile; Yakupoglu, H. Nejat; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1988-01-01

Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 C. At 600 C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Manish; Deshmukh, Prithviraj; Kasanaboina, Pavan; Reynolds, C. Lewis, Jr.; Liu, Yang; Iyer, Shanthi

2017-12-01

Bandgap reduction of 10% by incorporation of a dilute amount of N is reported for the first time, in axial GaAsSb nanowires (NWs) grown on Si (111) via Ga-assisted molecular beam epitaxy. Impact of N incorporation on the surface morphology, NW growth kinetics, and their structural and optical properties were examined. Dilute nitride NWs with Sb composition of 7 at% did not exhibit any noticeable planar defects, as revealed by the absence of satellite twin peaks in the selected-area diffraction pattern and high-resolution transmission electron microscopy imaging. Point defects were also minimal in as-grown dilute nitride NWs, as ascertained from the comparison of low-temperature photoluminescence spectra as well as the shape and shift of Raman modes, with in situ annealed NWs in different ambients. Evidence of enhanced incorporation of N was found in the NWs in situ annealed in N ambient, but with deteriorated optical quality due to simultaneous creation of N-induced defects. The lack of any noticeable defects in the as-grown GaAsSbN NWs demonstrates the advantage of the vapor-liquid-solid mechanism responsible for growth of axial configuration over the vapor-solid growth mechanism for core-shell NWs as well as their thin film counterpart, which commonly exhibit N-induced point defects.

Quantitative RHEED Studies of MBE Growth of 3-5 Compounds

DTIC Science & Technology

1991-06-03

Vertical - Cavity Surface - Emitting Laser Using Molecular Beam Epitaxial ...Growth of Vertical Cavity Surface - emitting Lasers Our work under this ARO contract on the control of MBE growth has enhanced our ability to grow...pattern about the surface structure of nearly perfect crystals prepared by Molecular Beam Epitaxy ( MBE ) and to use these techniques

GHz-THz Electronics

DTIC Science & Technology

2013-03-07

Approved for public release; distribution is unlimited Molecular Beam Epitaxy of α-Sn on InSb Arnold Kiefer & Bruce Claflin, AFRL/RYDH Unique...Schlom & Kyle Shen (Cornell) Tight coupling of molecular - beam epitaxy (MBE) and angle-resolved photoelectron spectroscopy (ARPES) reveals metal...Materials & Devices Beyond Graphene Jim Hwang, Gernot Pomrenke, Joycelyn Harrison & Misoon Mah (AFOSR) 3D VCSEL Heterostructure h-BN/Graphene/h-BN

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, M. Y.; Haas, T. W.

1990-06-01

We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

PubMed Central

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Investigation of the silicon ion density during molecular beam epitaxy growth

NASA Astrophysics Data System (ADS)

Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

2002-05-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ma, Y. J.; Zhang, Y. G.; Gu, Y.; Xi, S. P.; Chen, X. Y.; Liang, Baolai; Juang, Bor-Chau; Huffaker, Diana L.; Du, B.; Shao, X. M.; Fang, J. X.

2017-07-01

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm-3, and for Be densities below 9.5×1017 cm-3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm-3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

Application of the ALE and MBE Methods to the Growth of Layered Hg sub x Cd sub 1-x Te Films.

DTIC Science & Technology

1986-09-26

films / We have studied the applicability of the Atomic Layer Epitaxy (ALE, vee Ref. -1pand Molecular Beam Epitaxy (MBE) ito growth of Hg2 Cdi- ,Te...thin- films throughout the composition range 0 x $ 0.8. The progress of the Contract has been reported periodically in five interim reports. This final...I separate sources) yielded films with high x values. On the grounds of these observations we do not find ALE suitable for growth of HgCdTe. 2) ALE

Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

1995-05-01

The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

NASA Astrophysics Data System (ADS)

Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

2017-09-01

The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

Mn-doped Ge self-assembled quantum dots via dewetting of thin films

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong

2017-03-01

In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990.

DTIC Science & Technology

1991-01-01

Hagino Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan This paper describes composition control of GaAsP...by performing As controlled RHEED oscillation experiments 110]. The SPMQW essentially equivalent to 20% and 33% alloys were grown by deposition of 1...and the Office of Naval Research . Hence RTD No. 28 was grown at 425 0 C with the As 4 beam equivalent pressure (BEP) reduced to 1.6 x 10 - " Torr

Growth of InN on Ge substrate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

2005-06-01

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-04-01

Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy

DTIC Science & Technology

2015-09-21

SECURITY CLASSIFICATION OF: Semiconductor nanowires have been identified as a viable technology for next-generation infrared (IR) photodetectors with... nanowires , by varying the Sb content using Ga-assisted molecular beam epitaxy. An increase in Sb content leads to strain accumulation in shell...manifesting in rough surface morphology, multifaceted growths, curved nanowires , and deterioration in the 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

DOEpatents

Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

1992-12-15

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

DOEpatents

Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

1992-01-01

A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

High-Speed High-Efficiency Large-Area Resonant Cavity Enhanced p-i-n Photodiodes for Multimode Fiber Communications

DTIC Science & Technology

2001-12-01

850 nm. The layers are grown by molecular beam epitaxy . The AlGaAs–GaAs inter- faces are alloy-graded for 30 nm to eliminate charge trapping that may... beam of the VCSELs allow for easy coupling of light into the MMF, it is also desirable to have photodetectors with large active windows compatible with... VCSEL )emitting at 850 nm [1] have become the preferred source for high-speed short-wavelength communication systems. These VCSELs are particularly

Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation

NASA Astrophysics Data System (ADS)

Goodman, S. A.; Auret, F. D.; Meyer, W. E.

1994-01-01

Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm-3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS ``signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.

Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Denisov, D. V.; Filimonov, A. V.; Nevedomsky, V. N.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Sokolovskii, G. S.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu

2017-11-01

The method of molecular beam epitaxy demonstrates the possibility to create high quality heterostructures of quantum cascade lasers in a spectral range of 7-8 μm containing 50 quantum cascades in an active region. Design based on the principle of two-phonon resonant scattering is used. X-ray diffraction and transmission electron microscopy experiments confirm high structural properties of the created heterostructures, e.g. the identity of the composition and thickness of epitaxial layers in all 50 cascades. Edge-emitting lasers based on the grown heterostructure demonstrate lasing with threshold current density of 2.8 kA/cm2 at a temperature of 78 K.

Novel cryogenic sources for liquid droplet and solid filament beams

NASA Astrophysics Data System (ADS)

Grams, Michael P.

Two novel atomic and molecular beam sources have been created and tested consisting first of a superfluid helium liquid jet, and secondly a solid filament of argon. The superfluid helium apparatus is the second of its kind in the world and uses a modified liquid helium cryostat to inject a cylindrical stream of superfluid helium into vacuum through glass capillary nozzles with diameters on the order of one micron created on-site at Arizona State University. The superfluid beam is an entirely new way to study superfluid behavior, and has many new applications such as superfluid beam-surface scattering, beam-beam scattering, and boundary-free study of superfluidity. The solid beam of argon is another novel beam source created by flowing argon gas through a capillary 50 microns in diameter which is clamped by a small copper plate to a copper block kept at liquid nitrogen temperature. The gas subsequently cools and solidifies plugging the capillary. Upon heating, the solid plug melts and liquid argon exits the capillary and immediately freezes by evaporative cooling. The solid filaments may find application as wall-less cryogenic matrices, or targets for laser plasma sources of extreme UV and soft x-ray sources.

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

PubMed

Zaleszczyk, Wojciech; Janik, Elzbieta; Presz, Adam; Dłuzewski, Piotr; Kret, Sławomir; Szuszkiewicz, Wojciech; Morhange, Jean-François; Dynowska, Elzbieta; Kirmse, Holm; Neumann, Wolfgang; Petroutchik, Aleksy; Baczewski, Lech T; Karczewski, Grzegorz; Wojtowicz, Tomasz

2008-11-01

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio

2007-02-09

In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

NASA Astrophysics Data System (ADS)

Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

2017-05-01

We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

DOE PAGES

Lin, Yong; Leung, Benjamin; Li, Qiming; ...

2015-07-14

In this study, ammonia-based molecular beam epitaxy (NH 3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH 3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH 3-MBE grown GaN nanowires show moremore » than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

p-Type and n-type doping of ZnSe: Effects of hydrogen incorporation

NASA Astrophysics Data System (ADS)

Fisher, P. A.; Ho, E.; House, J. L.; Petrich, G. S.; Kolodziejski, L. A.; Walker, J.; Johnson, N. M.

1995-05-01

The hydrogenation behavior of p- and n-type ZnSe grown on GaAs by gas source molecular beam epitaxy (GSMBE) is presented. Recent advances in p-type doping, using a radio frequency (RF) plasma source with nitrogen, have led to the successful fabrication of blue/green light emitters based on the (Zn,Mg)(S,Se) material system grown by molecular beam epitaxy (MBE). GSMBE replaces the high vapor pressure group VI elements with hydride gases which are amenable to regulation using precision mass flow controllers, and has the potential to deliver improved compositional control and reproducibility. We have found that the presence of hydrogen does not affect the electrical conductivity of ZnSe:Cl grown by GSMBE. In contrast, nitrogen-doped ZnSe is speculated to be electrically passivated by hydrogen for certain growth conditions as evidenced by: (1) coherent tracking of the hydrogen concentration with variations in the nitrogen concentration, which is measured by secondary ion mass spectrometry (SIMS), and (2) indications of high resistivity determined by capacitance-voltage ( C-V) measurements. Conventional and rapid thermal annealing (RTA) have been investigated to modify the degree of hydrogen passivation.

Microstructures of GaN1-xPx layers grown on (0001) GaN substrates by gas source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Seong, Tae-Yeon; Bae, In-Tae; Choi, Chel-Jong; Noh, D. Y.; Zhao, Y.; Tu, C. W.

1999-03-01

Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001) GaN/sapphire at temperatures (Tg) in the range 500-760 °C. TEM, TED, and XRD results indicate that the samples grown at Tg⩽600 °C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg⩾730 °C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500 °C layer, the two phases are randomly oriented and distributed, whereas the 600 °C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg⩾730 °C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.

Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi

2013-06-15

The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

Fabrication of IrSi(3)/p-Si Schottky diodes by a molecular beam epitaxy technique

NASA Technical Reports Server (NTRS)

Lin, T. L.; Iannelli, J. M.

1990-01-01

IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.

Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ritzmann, Julian; Schott, Rüdiger; Gross, Katherine; Reuter, Dirk; Ludwig, Arne; Wieck, Andreas D.

2018-01-01

In this work, we first study the effect of different growth parameters on the molecular beam epitaxy (MBE) growth of GaAs layers on (1 1 1)A oriented substrates. After that we present a method for the MBE growth of atomically smooth layers by sequences of growth and annealing phases. The samples exhibit low surface roughness and good electrical properties shown by atomic force microscopy (AFM), scanning electron microscopy (SEM) and van-der-Pauw Hall measurements.

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

NASA Technical Reports Server (NTRS)

Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

1988-01-01

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

DC Characteristics of InAs/AlSb HEMTs at Cryogenic Temperatures

DTIC Science & Technology

2009-05-01

Molecular Beam Epitaxy - MBE XIV, April 2007, Volumes 301- 302, Pages 1025-1029 Fig. 5: SEM image showing the 2x50μm InAs/AlSb HEMT . 325 ...started with a heterostructure grown by molecular beam epitaxy on a semi- insulating InP substrate. The heterostructure is shown in Fig. 1. Mesa isolation...DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures G. Moschetti, P-Å Nilsson, N. Wadefalk, M. Malmkvist, E. Lefebvre, J. Grahn

Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

2016-12-01

Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the "easy-magnetic plane" type was found. The gyromagnetic ratio and the demagnetizing field 4π M S were calculated.

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S.

2010-12-01

The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the structural quality of the material and limited diffusion of surface adatoms during growth dictate the In vacancy formation in low electron-density undoped epitaxial InN, while growth conditions and thermodynamics have a less important role, contrary to what is observed in, e.g., GaN. Furthermore, the results imply that in high quality InN, the electron mobility is likely limited not by ionized point defect scattering, but rather by threading dislocations.

Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

2017-12-01

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Asoka-Kumar, P.; Gossmann, H.-J.; Unterwald, F. C.; Feldman, L. C.; Leung, T. C.; Au, H. L.; Talyanski, V.; Nielsen, B.; Lynn, K. G.

1993-08-01

Positron annihilation in Si is a quantitaive, depth-sensitive technique for the detection of vacancylike defects or voids. A sensitivity of 5×1015 cm-3 for voidlike defects is easily achieved. The technique has been applied to a study of point-defect distributions in thin films of Si grown by molecular-beam epitaxy. A special procedure was developed to remove the influence of the native oxide on the positron measurement. 200-nm-thick films grown at temperatures between 475 and 560 °C show no defects below the sensitivity limit and are indistinguishable from the bulk substrate. So are films grown at 220 °C, provided a 2-min high-temperature anneal to a peak temperature of >=500 °C is executed every ~=30 nm during growth. If TRTA=450 °C, part of the film contains vacancylike defects to a concentration of ~=1018 cm-3. These results correlate well with current-voltage characteristics of p-n junctions grown with different rapid thermal anneal (RTA) temperatures. Ion scattering, with a defect sensitivity of ~=1%, shows no difference between films grown with different TRTA. Recrystallization of amorphous films, deposited at room temperature and annealed in situ at 550 °C, always leaves a significant defect concentration of ~=2×1018 cm-3; those defects are reduced but still present even after a 2-h 800 °C furnace anneal.

Comparative optical study of epitaxial InGaAs quantum rods grown with As{sub 2} and As{sub 4} sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius

2013-12-04

Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As{sub 2} or As{sub 4} sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As{sub 4} source is used. The changes inmore » optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.« less

Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, A.; Hein, C.; Bremers, H.

The kinetic processes of InN growth using alternating source fluxes with sub-monolayer In pulses in plasma-assisted molecular beam epitaxy have been investigated. Growth at various temperatures reveals the existence of two growth regimes. While growth at low temperatures is solely governed by surface diffusion, a combination of decomposition, desorption, and diffusion becomes decisive at growth temperatures of 470 °C and above. At this critical temperature, the surface morphology changes from a grainy structure to a structure made of huge islands. The formation of those islands is attributed to the development of an indium adlayer, which can be observed via reflection highmore » energy electron diffraction monitoring. Based on the growth experiments conducted at temperatures below T{sub Growth} = 470 °C, an activation energy for diffusion of 0.54 ± 0.02 eV has been determined from the decreasing InN island density. A comparison between growth on metalorganic vapor phase epitaxy GaN templates and pseudo bulk GaN indicates that step edges and dislocations are favorable nucleation sites. Based on the results, we developed a growth model, which describes the main mechanisms of the growth.« less

Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Satoh, Motoki; Arimoto, Keisuke; Yamanaka, Junji; Sawano, Kentarou; Shiraki, Yasuhiro; Nakagawa, Kiyokazu

2018-04-01

The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem for device applications. In this paper, the electrical properties of intrinsic-defect-related acceptor states generated during the SGOI formation are reported. It is found that freeze-out is hard to be achieved even at temperatures below 10 K, which indicates that the Fermi level lies near the valence band at low temperatures. With an aim to annihilate these defects, thermal annealing at 1050 °C for 12 h in N2 ambient was carried out. It was found that the thermal treatment is effective in reducing the densities of the acceptor states and in improving the crystalline quality.

GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range

NASA Astrophysics Data System (ADS)

Koeth, J.; Dietrich, R.; Reithmaier, J. P.; Forchel, A.

Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

GaAs core--shell nanowires for photovoltaic applications.

PubMed

Czaban, Josef A; Thompson, David A; LaPierre, Ray R

2009-01-01

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

NASA Astrophysics Data System (ADS)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

NASA Technical Reports Server (NTRS)

Bharatan, Sudhakar; Iyer, Shanthi; Matney, Kevin; Collis, Ward J.; Nunna Kalyan; Li, Jia; Wu, Liangjin; McGuire, Kristopher; McNeil, Laurie E.

2006-01-01

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.

Molecular beam epitaxy growth of SmFeAs(O,F) films with Tc = 55 K using the new fluorine source FeF3

NASA Astrophysics Data System (ADS)

Sakoda, Masahito; Ishii, Akihiro; Takinaka, Kenji; Naito, Michio

2017-07-01

REFeAs(O,F) (RE: rare-earth element) has the highest-Tc (˜58 K) among the iron-based superconductors, but a thin-film growth of REFeAs(O,F) is difficult. This is because it is not only a complex compound consisting of five elements but also requires doping of highly reactive fluorine to achieve superconductivity. We have reported in our previous article that fluorine can be supplied to a film by subliming solid-state fluorides such as FeF2 or SmF3. In this article, we report on the growth of SmFeAs(O,F) using FeF3 as an alternative fluorine source. FeF3 is solid at ambient temperatures and decomposes at temperatures as low as 100-200 °C, and releases fluorine-containing gas during the thermal decomposition. With this alternative fluorine source, we have grown SmFeAs(O,F) films with Tc as high as 55 K. This achievement demonstrates that FeF3 has potential as a fluorine source that can be employed ubiquitously for a thin-film growth of any fluorine containing compounds. One problem specific to FeF3 is that the compound is highly hydroscopic and contains a substantial amount of water even in its anhydrous form. In this article, we describe how to overcome this specific problem.

IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Shi, Z.; Xu, G.; McCann, P. J.; Fang, X. M.; Dai, N.; Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.

2000-06-01

Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 μm operated nearly to room temperature (289 K).

Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shafi, M.; Mari, R. H.; Khatab, A.; Henini, M.; Polimeni, A.; Capizzi, M.; Hopkinson, M.

2011-12-01

Dilute nitride GaAs1-xNx layers have been grown by molecular beam epitaxy with nitrogen concentration ranging from 0.2% to 0.8%. These samples have been studied before and after hydrogen irradiation by using standard deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS techniques. The activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs.

Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Foxon, C.T.

1988-07-25

We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function of cavity length and temperature, we conclude that the optical scattering losses are very low, that the gain-current characteristics are similar to alloy barrier devices, and that there is evidence for current leakage by recombination in the barriers.

Electric field-tunable Ba{sub x}Sr{sub 1-x}TiO{sub 3} films with high figures of merit grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikheev, Evgeny; Kajdos, Adam P.; Hauser, Adam J.

2012-12-17

We report on the dielectric properties of Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x Less-Than-Or-Equivalent-To 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore-560013

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Smith, K. V.; Yu, E. T.; Elsass, C. R.; Heying, B.; Speck, J. S.

2001-10-01

Local electronic properties in a molecular-beam-epitaxy-grown AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure are probed using depth-resolved scanning capacitance microscopy. Theoretical analysis of contrast observed in scanning capacitance images acquired over a range of bias voltages is used to assess the possible structural origins of local inhomogeneities in electronic structure, which are shown to be concentrated in areas where Ga droplets had formed on the surface during growth. Within these regions, there are significant variations in the local electronic structure that are attributed to variations in both AlxGa1-xN layer thickness and Al composition. Increased charge trapping is also observed in these regions.

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

NASA Astrophysics Data System (ADS)

Wofford, J. M.; Oliveira, M. H., Jr.; Schumann, T.; Jenichen, B.; Ramsteiner, M.; Jahn, U.; Fölsch, S.; Lopes, J. M. J.; Riechert, H.

2014-09-01

Graphene is grown by molecular beam epitaxy using epitaxial Ni films on MgO(111) as substrates. Raman spectroscopy and scanning tunneling microscopy reveal the graphene films to have few crystalline defects. While the layers are ultra-smooth over large areas, we find that Ni surface features lead to local non-uniformly thick graphene inclusions. The influence of the Ni surface structure on the position and morphology of these inclusions strongly suggests that multilayer graphene on Ni forms at the interface of the first complete layer and metal substrate in a growth-from-below mechanism. The interplay between Ni surface features and graphene growth behavior may facilitate the production of films with spatially resolved multilayer inclusions through engineered substrate surface morphology.

Molecular beam epitaxy growth of SmB6+/-δ thin films

NASA Astrophysics Data System (ADS)

Hoffman, Jason; Saleem, Muhammad; Day, James; Bonn, Doug; Hoffman, Jennifer

SmB6 has emerged as a leading candidate in the search for exotic topological states generated by strong interactions. The synthesis of epitaxial SmB6 thin films presents new avenues to control surface termination, thickness, and strain in this system. In this work, we use molecular beam epitaxy (MBE) to deposit SmB6+/-δ films on insulating (001)-oriented MgO substrates. We use ex-situ x-ray diffraction and magnetotransport measurements to assess the properties of the samples and compare them to previously reported values for single crystals. We also discuss the prospects of using rare-earth substitution to control the correlation strength and alter the topology of the bulk and surface electronic states.

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Schumann, T.; Lopes, J. M. J.; Wofford, J. M.; Oliveira, M. H.; Dubslaff, M.; Hanke, M.; Jahn, U.; Geelhaar, L.; Riechert, H.

2015-09-01

We examine how substrate selection impacts the resulting film properties in graphene growth by molecular beam epitaxy (MBE). Graphene growth on metallic as well as dielectric templates was investigated. We find that MBE offers control over the number of atomic graphene layers regardless of the substrate used. High structural quality could be achieved for graphene prepared on Ni (111) films which were epitaxially grown on MgO (111). For growth either on Al2O3 (0001) or on (6√3×6√3)R30°-reconstructed SiC (0001) surfaces, graphene with a higher density of defects is obtained. Interestingly, despite their defective nature, the layers possess a well defined epitaxial relation to the underlying substrate. These results demonstrate the feasibility of MBE as a technique for realizing the scalable synthesis of this two-dimensional crystal on a variety of substrates.

Alternative group V precursors for CVD applications

NASA Astrophysics Data System (ADS)

Lum, R. M.; Klingert, J. K.

1991-01-01

The chemical vapor deposition (CVD) techniques used to grow III/V semiconductors films, such as metalorganic vapor phase epitaxy (MOVPE), hydride VPE, chemical beam epitaxy (CBE) and gas source molecular beam epitaxy (GS-MBE), all use hydrides (AsH 3 and PH 3) as the Group V source. However, the hydrides are extremely toxic gases which are stored under high pressure (200-2000 psi). To reduce the safety hazards associated with these gases, alternative Group V precursors have been investigated. Organoarsenic and phosphorous compounds have received the most attention as replacements for AsH 3 and PH 3 because they are typically low vapor pressure liquids, and thus present significantly lower exposure risks than the hydrides. For AsH 3 these have included the methyl, ethyl and butyl-based derivatives RnAsH 3- n, with varying degrees ( n = 1-3) of hydrogen atom substitution. In this paper the growth properties, thermochemistry and toxicity of the various alkylarsine precursors are compared with arsine. Data are presented on the impact of the thermochemistry of these compounds on film electrical properties, and on the effects of precursor composition and purity on overall film quality. The suitability of alternative As-precursors for device applications is demonstrated, and selection criteria are presented for the most effective alkylarsine compound for a particular CVD growth process.

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.

PubMed

Desplanque, L; Bucamp, A; Troadec, D; Patriarche, G; Wallart, X

2018-07-27

In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO 2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces. Several micron long in-plane nanowires (NWs) can be achieved as well as more complex nanostructures such as branched NWs. The electrical properties of the material are investigated by the characterization of an InSb NW MOSFET down to 77 K. The resulting room temperature field effect mobility values are comparable with those reported on back-gated MOSFETs based on InSb NWs obtained by vapor liquid solid growth or electrodeposition. This growth method paves the way to the fabrication of complex InSb-based nanostructures.

Increase in the diffusion length of minority carriers in Al{sub x}Ga{sub 1–x}N alloys ({sub x} = 0–0.1) fabricated by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malin, T. V., E-mail: mal-tv@mail.ru; Gilinsky, A. M.; Mansurov, V. G.

2015-10-15

The room-temperature diffusion length of minority carriers in n-Al{sub 0.1}Ga{sub 0.9}N layers grown by ammonia molecular beam epitaxy on sapphire (0001) substrates used in structures for ultraviolet photodetectors is studied. Measurements were performed using the spectral dependence of the photocurrent recorded in a built-in p–n junction for thin samples and using the induced electron-current procedure for films up to 2 µm thick. The results show that the hole diffusion length in n-AlGaN films is 120–150 nm, which is larger than in GaN films grown under similar growth conditions by a factor of 3–4. This result can be associated with themore » larger lateral sizes characteristic of hexagonal columns in AlGaN layers grown by molecular beam epitaxy. No increase in the hole diffusion length is observed for thicker films.« less

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

PubMed

Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2012-09-12

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

NASA Astrophysics Data System (ADS)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

2018-05-01

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. The difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

NASA Astrophysics Data System (ADS)

Samal, D.; Nakamura, H.; Takagi, H.

2016-07-01

A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ˜1020 cm-3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

NASA Astrophysics Data System (ADS)

Fan, C. C.; Liu, Z. T.; Cai, S. H.; Wang, Z.; Xiang, P.; Zhang, K. L.; Liu, W. L.; Liu, J. S.; Wang, P.; Zheng, Y.; Shen, D. W.; You, L. X.

2017-08-01

High-quality (001)-oriented perovskite [(SrIrO3)m/(SrTiO3)] superlattices (m=1/2, 1, 2, 3 and ∞ ) films have been grown on SrTiO3(001) epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

NASA Astrophysics Data System (ADS)

Khosravi, Ava; Addou, Rafik; Smyth, Christopher M.; Yue, Ruoyu; Cormier, Christopher R.; Kim, Jiyoung; Hinkle, Christopher L.; Wallace, Robert M.

2018-02-01

Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2 lattice as well as tunable nitrogen concentration with N2 plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe2 lattice after N2 plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N2 plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.

Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Chen, Cheng-Yu; Hsiao, Li-Han; Chyi, Jen-Inn

2015-09-01

In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

Growth of analog Al(x)Ga(1-x)As/GaAs parabolic quantum wells by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wang, S. M.; Treideris, G.; Chen, W. Q.; Andersson, T. G.

1993-01-01

Parabolic Al(x)Ga(1-x)As/GaAs quantum wells have been grown by molecular beam epitaxy with linear ramping of the Al effusion cell temperature, where the ramping rate was carefully analyzed to avoid a flux lag. The calculated potential profile from the temperature variation was very close to the parabolic one. Low-temperature photoluminescence showed clear interband transitions up to the n = 3 sublevels. The equal energy spacing between adjacent transitions involving heavy-hole states confirmed the parabolic shape of the quantum well.

Perspective: Oxide molecular-beam epitaxy rocks!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, Darrell G., E-mail: schlom@cornell.edu

2015-06-01

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

Molecular beam epitaxy growth method for vertical-cavity surface-emitting laser resonators based on substrate thermal emission

NASA Astrophysics Data System (ADS)

Talghader, J. J.; Hadley, M. A.; Smith, J. S.

1995-12-01

A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.

Magnetic properties of epitaxial hexagonal HoFeO3 thin films

NASA Astrophysics Data System (ADS)

Wang, Xiao; Xiao, Zhuyun; Xu, Xiaoshan; Wang, Wenbin; Keavney, David; Liu, Yaohua; Cheng, X. M.

2014-03-01

Multiferroic materials exhibit multiple ferroic orders simultaneously and thus have great potential applications in information technology, sensing and actuation. Epitaxial hexagonal HoFeO3 (h-HFO) films are very promising candidates as multiferroic materials with room temperature ferromagnetism, because magnetic Ho3+ ions are expected to have stronger exchange interactions with Fe3+ ions than the well-studied h-LuFeO3 films. We report study of magnetic properties of epitaxial h-HFO thin films deposited using laser molecular beam epitaxy on Yttria-stabilized zirconia (YSZ) substrates. X-ray diffraction measurements confirmed the epitaxial registry and six-fold symmetry of the film. Temperature dependence of magnetization of the film measured by a Quantum Design SQUID magnetometer shows dominating paramagnetic characteristic. Element specific x-ray magnetic circular dichroism measurements performed at beamline 4-ID-C of the Advanced Photon Source show a ferromagnetic ordering of Fe and an exchange coupling between Ho3+ and Fe3+ ions. Work at BMC is supported by NSF Career award (DMR 1053854). Work at ANL is supported by US-DOE, Office of Science, BES (No. DE-AC02-06CH11357).

Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro; Isu, Toshiro

2017-11-01

Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near-infrared region. Two-color lasing of the device was successfully demonstrated under pulsed current operations at room temperature. We also observed good temporal coherence of the two-color laser light using a Michelson interferometer. A coherent terahertz source is expected when a wafer-bonded coupled cavity consisting of (0 0 1) and non-(0 0 1) epitaxial films is used for the two-color laser device, in which the difference-frequency generation can be enabled by the second-order nonlinear response in the lower cavity.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

Near Field Scanning Optical Microscopy (NSOM) of Nano Devices

DTIC Science & Technology

2008-12-01

FEATURES OF GaN NANOWIRES Gallium Nitride (GaN) nanowires are semiconductor wires of great interest lately for its some of its unique properties. These...via chemical vapour deposition (CVD) [19] or even with gas source molecular beam epitaxy (MBE) [20] The GaN nanowires growth techniques will not be...Denlinger, and Peidong Yang, Crystallographic alignment of high-density gallium nitride nanowire arrays, Nature Materials, Issue 3 Vol 8, pg 524

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

PubMed Central

2012-01-01

We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail. PMID:23043754

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

Growth and optical investigations of high quality individual CdTe/(Cd,Mg)Te core/shell nanowires.

PubMed

Wojnar, P; Płachta, J; Kret, S; Kaleta, A; Zaleszczyk, W; Szymura, M; Wiater, M; Baczewski, L T; Pietruczik, A; Karczewski, G; Wojtowicz, T; Kossut, J

2017-01-27

CdTe nanowires with the average diameter of only 40 nm coated with (Cd,Mg)Te shells are grown using Au-catalyzed vapor-liquid-solid growth mechanism in a system for molecular beam epitaxy. High optical quality of individual nanowires is revealed by means of low temperature cathodoluminescence and micro-luminescence. It is found that, the optical emission spectrum consists mostly of the near band edge emission without any significant contribution of defect related luminescence. Moreover, the importance of surface passivation with (Cd,Mg)Te coating shells is demonstrated.

Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Park, K. W.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

2013-02-01

A proximal probe-based quantitative measurement of thermal conductivity with ˜100-150 nm lateral and vertical spatial resolution has been implemented. Measurements on an ErAs/GaAs superlattice structure grown by molecular beam epitaxy with 3% volumetric ErAs content yielded thermal conductivity at room temperature of 9 ± 2 W/m K, approximately five times lower than that for GaAs. Numerical modeling of phonon scattering by ErAs nanoparticles yielded thermal conductivities in reasonable agreement with those measured experimentally and provides insight into the potential influence of nanoparticle shape on phonon scattering. Measurements of wedge-shaped samples created by focused ion beam milling provide direct confirmation of depth resolution achieved.

Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kruse, J. E.; Doundoulakis, G.; Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well asmore » numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.« less

Molecular Beam Epitaxial Growth of Iron Nitrides on Zinc-Blende Gallium Nitride(001)

NASA Astrophysics Data System (ADS)

Pak, Jeongihm; Lin, Wenzhi; Chinchore, Abhijit; Wang, Kangkang; Smith, Arthur R.

2008-03-01

Iron nitrides are attractive materials for their high magnetic moments, corrosion, and oxidation resistance. We present the successful epitaxial growth of iron nitride on zinc-blende gallium nitride (c-GaN) in order to develop a novel magnetic transition metal nitride/semiconductor system. First, GaN is grown on magnesium oxide (MgO) substrates having (001) orientation using rf N2-plasma molecular beam epitaxy. Then we grow FeN at substrate temperature of ˜ 210 ^oC up to a thickness of ˜ 10.5 nm. In-situ reflection high-energy electron diffraction (RHEED) is used to monitor the surface during growth. Initial results suggest that the epitaxial relationship is FeN[001] || GaN[001] and FeN[100] || GaN[100]. Work in progress is to investigate the surface using in-situ scanning tunneling microscopy (STM) to reveal the surface structure at atomic scale, as well as to explore more Fe-rich magnetic phases.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza

2015-11-23

Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BNmore » until it may cover entire h-BN flakes.« less

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptormore » states in the presence of the midgap state EL2.« less

Perspective. Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

DOE PAGES

Wu, J.; Bozovic, I.

2015-04-06

Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru; Zablotsky, S. V.; Shilyaev, A. V.

Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of ∼30 meV. The possible relationship between energy states and crystal-structure defects is discussed.

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

NASA Technical Reports Server (NTRS)

Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

1986-01-01

A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

InN island shape and its dependence on growth condition of molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Cao, Y. G.; Xie, M. H.; Liu, Y.; Ng, Y. F.; Wu, H. S.; Tong, S. Y.

2003-12-01

During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas pillar-shaped islands are obtained when excess indium fluxes are employed. The pillar-shaped islands are identified to represent the equilibrium shape, whereas the pyramidal ones are limited by kinetics. As the size of islands increases, their aspect ratio shows a decreasing trend, which is attributed to a gradual relaxation of strain in the layer by defects.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.

PubMed

Plissard, S; Larrieu, G; Wallart, X; Caroff, P

2011-07-08

We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires directly on Si(111) with a near-perfect vertical yield, using electron-beam-defined arrays of holes in a dielectric layer and molecular beam epitaxy. In our conditions, GaAs nanowires are grown along a vapor-liquid-solid mechanism, using in situ self-forming Ga droplets. The focus of this paper is to understand the role of the substrate preparation and of the pre-growth conditioning. Without changing temperature or the V/III ratio, the yield of vertical nanowires is increased incrementally up to 95%. The possibility to achieve very dense arrays, with center-to-center inter-wire distances less than 100 nm, is demonstrated.

Si /SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning

NASA Astrophysics Data System (ADS)

Suet, Z.; Paul, D. J.; Zhang, J.; Turner, S. G.

2007-05-01

In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si /SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate linear current-voltage characteristics, while a 15min hydrogen clean produces negative differential resistance with peak-to-valley current ratios up to 2.2 and peak current densities of 5.0A/cm2 at 30K. Analysis of the valley current and the band structure of the devices suggest methods for increasing the operating temperature of Si /SiGe resonant tunneling diodes as required for applications.

Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

2016-03-01

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

Broad area quantum cascade lasers operating in pulsed mode above 100 °C λ ∼4.7 μm

NASA Astrophysics Data System (ADS)

Zhao, Yue; Yan, Fangliang; Zhang, Jinchuan; Liu, Fengqi; Zhuo, Ning; Liu, Junqi; Wang, Lijun; Wang, Zhanguo

2017-07-01

We demonstrate a broad area (400 μm) high power quantum cascade laser (QCL). A total peak power of 62 W operating at room temperature is achieved at λ ∼4.7 μm. The temperature dependence of the peak power characteristic is given in the experiment, and also the temperature of the active zone is simulated by a finite-element-method (FEM). We find that the interface roughness of the active core has a great effect on the temperature of the active zone and can be enormously improved using the solid source molecular beam epitaxy (MBE) growth system. Project supported by the National Basic Research Program of China (No. 2013CB632801), the National Key Research and Development Program (No. 2016YFB0402303), the National Natural Science Foundation of China (Nos. 61435014, 61627822, 61574136, 61306058, 61404131), the Key Projects of Chinese Academy of Sciences (No. ZDRW-XH-20164), and the Beijing Natural Science Foundation (No. 4162060).

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

NASA Technical Reports Server (NTRS)

Radhakrishnan, G.; Mccullough, O.; Cser, J.; Katz, J.

1988-01-01

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

DTIC Science & Technology

2009-07-01

making III–V FETs has been different than for silicon FETs. Growth techniques such as molecular beam epitaxy (MBE) are used to create heterostructures in...lities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures...article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel

Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd₂O₃ and Y₂O₃ on GaN.

PubMed

Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei

2013-02-01

High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and highly structural perfection. Structural investigation was carried out by in situ reflection high energy electron diffraction (RHEED) and ex-situ X-ray diffraction (XRD) with synchrotron radiation. In the initial stage of epitaxial growth, the R₂O₃ layers have a hexagonal phase with the epitaxial relationship of R₂O₃ (0001)(H)<1120>(H)//GaN(0001)(H)<1120>(H). With the increase in R₂O₃ film thickness, the structure of the R₂O₃ films changes from single domain hexagonal phase to monoclinic phase with six different rotational domains, following the R₂O₃ (201)(M)[020](M)//GaN(0001)(H)<1120>(H) orientational relationship. The structural details and fingerprints of hexagonal and monoclinic phase Gd₂O₃ films have also been examined by using electron energy loss spectroscopy (EELS). Approximate 3-4 nm is the critical thickness for the structural phase transition depending on the composing rare earth element.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

PubMed Central

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

2015-01-01

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. PMID:27877816

Structure and optical band gaps of (Ba,Sr)SnO{sub 3} films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh

2016-09-15

Epitaxial growth of (Ba{sub x}Sr{sub 1−x})SnO{sub 3} films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO{sub 3} films can be grown coherently strained on closely lattice and symmetry matched PrScO{sub 3} substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO{sub 3} films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.

Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

DTIC Science & Technology

2011-10-01

explored the use of in situ deposition of Al2O3 on GaSb grown on InP using molecular beam epitaxy and reported Dit values in the low 1012/cm2eV range near...M. Heyns, M. Caymax, and J. Dekoster, “GaSb mole- cular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide...transmission electron microscopy. Capacitors were made on these films using platinum (Pt) electrode deposited in an e- beam evaporator through a shadow

Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

2009-02-01

Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures

DTIC Science & Technology

2009-05-01

voltage (I-V) characteristics of several infrared LEDs, including a type-II W-well laser grown by Molecular Beam Epitaxy at Naval Research Laboratory...Injection Cavity (OPIC) lasers includes >4 um emission from a broadband laser and the measurement of spatial and temporal beam profiles. From August 2006...argon) at 15 mTorr, 400W ICP, and 70W RIE power, with an etch rate of 300 nm/min. Epitaxial ZnO layers were plasma etched using BCl3/SF0gas mixtures

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

2017-06-01

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

Craig L. Perkins, Ph.D. | NREL

Science.gov Websites

molecular beam epitaxy systems, two photoemission systems, a field-emission scanning Auger microprobe, a ;Molecular Anchors for Self-Assembled Monolayers on ZnO: A Direct Comparison of the Thiol and Phosphonic Acid

High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source

DTIC Science & Technology

2002-01-01

is the goal for applications in fiber optic communication systems. 1.3 micron edge- emitting lasers and VCSELs have been recently demonstrated by...GaAsN layers. CONCLUSIONS Molecular beam epitaxial growth of GaAsj_,N, layers has been studied as a function of nitrogen content and growth regimes. We...obtained are important for further improving the characteristics of InGaAsN lasers emitting at 1.3 micron. INTRODUCTION Group-Ill nitride semiconductors

Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

NASA Astrophysics Data System (ADS)

Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

2016-11-01

Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

2016-05-01

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding whitemore » emission.« less

Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Y. H.; He, Q. L.; Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China

2013-04-29

Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

2017-06-01

The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kumagai, Y.; Imada, S.; Baba, T.; Kobayashi, M.

2011-05-01

ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between ZnTe and ZnMgTe was not negligible, the critical layer thickness (CLT) was theoretically derived. Structures with varying Mg composition and layer thickness of ZnMgTe cladding layer were grown and examined for crystal quality with respect to theoretical data. The crystal quality was investigated by means of cross sectional transmission electron microscopy (TEM) and reciprocal space mapping (RSM). Optical confinements were observed by irradiating a laser beam from one end of the sample and monitoring the transmitted light from the other end.

New VCSEL technology with scalability for single mode operation and densely integrated arrays

NASA Astrophysics Data System (ADS)

Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

2011-06-01

Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

PubMed

Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

2016-06-08

Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

Molecular beam epitaxial growth, transmittance and photoluminescence spectra of zinc-blende CdTe thin films with high-quality on perovskite SrTiO3 (1 1 1) substrates

NASA Astrophysics Data System (ADS)

Song, Kun; Zhu, Xuanting; Tang, Kai; Bai, W.; Zhu, Liangqing; Yang, Jing; Zhang, Yuanyuan; Tang, Xiaodong; Chu, Junhao

2018-03-01

High-crystalline quality CdTe thin films are grown on the largely lattice-mismatched SrTiO3 (STO) (1 1 1) substrates by molecular beam epitaxy. A transformation from a three dimensional regime to a two dimensional one is observed by the reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The formation of an elastic deformation CdTe layer on STO (1 1 1), namely a pseudomorphic growth mode with a critical thickness of ∼40 nm, is supported by the RHEED, AFM and X-ray diffraction. Crystal structures and epitaxial relationships of CdTe epitaxial films on STO (1 1 1) are characterized by 2θ-ω scans and reciprocal space mapping. Two strong absorption peaks at the energies of ∼1.621 eV and ∼1.597 eV at 5 K are clearly observed for a ∼120 nm thick CdTe epitaxial film, which are proposed to be ascribed to the strained and unstrained epitaxial CdTe layers, respectively. Moreover, the presence of the exciton band while the absence of deep level defect states for the ∼120 nm thick CdTe film characterized by the temperature dependent photoluminescence spectra further supports the high-crystalline quality.

Group-III nitride VCSEL structures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ng, HockMin; Moustakas, Theodore D.

2000-07-01

III-nitride VCSEL structures designed for electron-beam pumping have been grown by molecular beam epitaxy (MBE). The structures consist of a sapphire substrate on which an AlN/GaN distributed Bragg reflector (DBR) with peak reflectance >99% at 402 nm is deposited. The active region consists of a 2-(lambda) cavity with 25 In0.1Ga0.9N/GaN multiquantum wells (MQWs) whose emission coincides with the high reflectance region of the DBR. The thicknesses of the InGaN wells and the GaN barriers are 35 angstrom and 75 angstrom respectively. The top reflector consists of a silver metallic mirror which prevents charging effects during electron-beam pumping. The structure was pumped from the top- side with a cw electron-beam using a modified cathodoluminescence (CL) system mounted on a scanning electron microscope chamber. Light output was collected from the polished sapphire substrate side. Measurements performed at 100 K showed intense emission at 407 nm with narrowing of the linewidth with increasing beam current. A narrow emission linewidth of 0.7 nm was observed indicating the onset of stimulated emission.

A method of producing high quality oxide and related films on surfaces

NASA Technical Reports Server (NTRS)

Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

1991-01-01

Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, A. A.; Hesjedal, T.; Diamond Light Source, Didcot OX11 0DE

We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined withmore » ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)« less

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

PubMed

Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; von Molnár, Stephan; Xiong, Peng

2013-04-10

Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Heterogeneous Two-Phase Pillars in Epitaxial NiFe 2 O 4 -LaFeO 3 Nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comes, Ryan B.; Perea, Daniel E.; Spurgeon, Steven R.

2017-07-10

Self-assembled epitaxial oxide nanocomposites have been explored for a wide range of applications, including multiferroic and magnetoelectric properties, plasmonics, and catalysis. These so-called “vertically aligned nanocomposites” form spontaneously during the deposition process when segregation into two phases is energetically favorable as compared to a solid solution. However, there has been surprisingly little work understanding the driving forces that govern the synthesis of these materials, which can include point defect energetics, surface diffusion, and interfacial energies. To explore these factors, La-Ni-Fe-O films have been synthesized by molecular beam epitaxy and it is shown that these phase segregate into spinel-perovskite nanocomposites. Usingmore » complementary scanning transmission electron microscopy and atom-probe tomography, the elemental composition of each phase is examined and found that Ni ions are exclusively found in the spinel phase. From correlative analysis, a model for the relative favorability of the Ni2+ and Ni3+ valences under the growth conditions is developed. It is shown that multidimensional characterization techniques provide previously unobserved insight into the growth process and complex driving forces for phase segregation.« less

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Growth and characterization of dilute nitride GaN{sub x}P{sub 1−x} nanowires and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires on Si (111) by gas source molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sukrittanon, S.; Kuang, Y. J.; Dobrovolsky, A.

2014-08-18

We have demonstrated self-catalyzed GaN{sub x}P{sub 1−x} and GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN{sub x}P{sub 1−x} nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaN{sub x}P{sub 1−x} nanowires. A temperature-dependent photoluminescence (PL) study performed on GaN{sub x}P{sub 1−x}/GaN{sub y}P{sub 1−y} core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localizedmore » states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaN{sub x}P{sub 1−x} core.« less

Growing Cobalt Silicide Columns In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Obert W.

1991-01-01

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

2017-02-01

We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

Growth of boron-doped few-layer graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Soares, G. V.; Nakhaie, S.; Heilmann, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented.

Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

NASA Astrophysics Data System (ADS)

Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

2017-02-01

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage ( I- V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I- V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

2002-02-01

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

DOEpatents

Chambers, Scott A.

2006-02-21

A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Siekacz, Marcin; Feduniewicz-Zmuda, Anna; Nowakowska-Szkudlarek, Anna; Sawicka, Marta; Perlin, Piotr

2018-03-01

We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10-4 Ω·cm2.

Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Ohshita, Hiroshi; Saito, Katsuhiko; Guo, Qixin

2018-02-01

Photoluminescence (PL) properties of ZnTe/ZnMgTe quantum well (QW) structures grown by molecular beam epitaxy (MBE) were investigated systematically with respect to well widths and Mg contents. Observed PL peak energies were consistent well with the calculated emission energies of the QWs considering a lattice distortion in the ZnTe well. From the temperature dependence of PL intensity, it was found that a suppression of a carrier escape from QW is crucial to obtain a PL at higher temperature in the ZnTe/ZnMgTe QW. Based on the results, multiple quantum well structures were designed and fabricated, which exhibited a green PL at room temperature.

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lang, J. R.; Neufeld, C. J.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Mishra, U. K.; Speck, J. S.

2011-03-01

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodbridge, K.; Blood, P.; Fletcher, E.D.

1984-07-01

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2016-03-15

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for themore » 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.« less

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe

NASA Astrophysics Data System (ADS)

Mavridi, N.; Zhu, J.; Eldose, N. M.; Prior, K. A.; Moug, R. T.

2018-05-01

ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m-2 and 34 ± 4 mJ m-2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.

Method of Forming Three-Dimensional Semiconductors Structures

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor)

2002-01-01

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed.

Fast Optoelectronic Switching Processes in Surface-Emitting Semiconductor Lasers and Nonlinear Etalons

DTIC Science & Technology

1992-05-01

molecular beam epitaxy (MWE). The crystal growers have been persuaded of the importance of this work, and several substrate rotation arrangements and In...RPG VCSELS for optical pumping at 800 wm GaAs/GaAlAs RPA etalons without epitaxial reflectors. The first three wafers were destined for above- and below...of MOCVD-grown GaAs/GaAIAs RPO- VCSEL samples with 20 quantum wells and epitaXial multilayer high-reflectivity stacks with R=3.995 and 0.999 was pumped

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

NASA Astrophysics Data System (ADS)

Takahasi, Masamitu

2018-05-01

The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III–V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid–solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

PubMed Central

Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

2016-01-01

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene. PMID:26928710

Spontaneous perpendicular exchange bias effect in L10-MnGa/FeMn bilayers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wei, D. H.; Zhao, J. H.

2018-01-01

We report on the spontaneous perpendicular exchange bias effect in as-grown L10-MnGa/FeMn bilayers. An FeMn layer with different thicknesses is introduced as an antiferromagnetic layer to couple with single-crystalline ferromagnetic L10-MnGa, which is epitaxially grown on a GaAs (001) substrate by molecular-beam epitaxy. The perpendicular exchange bias shows a strong dependence on both the thickness of the FeMn layer and the measurement temperature. A large spontaneous perpendicular exchange bias up to 8.9 kOe is achieved in L10-MnGa/FeMn bilayers at 5 K without any external magnetic treatment. The corresponding effective interfacial exchange energy Jeff is estimated to be 1.4 mJ/m2. The spontaneous perpendicular exchange bias effect in the (001) textured L10-MnGa/FeMn bilayers paves the way for spintronic devices based on exchange biased perpendicularly magnetized materials.

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Choi, Miri; Posadas, Agham; Dargis, Rytis; Shih, Chih-Kang; Demkov, Alexander A.; Triyoso, Dina H.; David Theodore, N.; Dubourdieu, Catherine; Bruley, John; Jordan-Sweet, Jean

2012-03-01

An epitaxial layer of SrTiO3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiOx interlayer can be formed which alters the strain state of SrTiO3. We report a study of strain relaxation in SrTiO3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO3 on Si (001). Understanding the process of strain relaxation of SrTiO3 on silicon will be useful for controlling the SrTiO3 lattice constant for lattice matching with functional oxide overlayers.

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

DOE PAGES

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; ...

2015-06-30

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon,more » namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.« less

First results for custom-built low-temperature (4.2 K) scanning tunneling microscope/molecular beam epitaxy and pulsed laser epitaxy system designed for spin-polarized measurements

NASA Astrophysics Data System (ADS)

Foley, Andrew; Alam, Khan; Lin, Wenzhi; Wang, Kangkang; Chinchore, Abhijit; Corbett, Joseph; Savage, Alan; Chen, Tianjiao; Shi, Meng; Pak, Jeongihm; Smith, Arthur

2014-03-01

A custom low-temperature (4.2 K) scanning tunneling microscope system has been developed which is combined directly with a custom molecular beam epitaxy facility (and also including pulsed laser epitaxy) for the purpose of studying surface nanomagnetism of complex spintronic materials down to the atomic scale. For purposes of carrying out spin-polarized STM measurements, the microscope is built into a split-coil, 4.5 Tesla superconducting magnet system where the magnetic field can be applied normal to the sample surface; since, as a result, the microscope does not include eddy current damping, vibration isolation is achieved using a unique combination of two stages of pneumatic isolators along with an acoustical noise shield, in addition to the use of a highly stable as well as modular `Pan'-style STM design with a high Q factor. First 4.2 K results reveal, with clear atomic resolution, various reconstructions on wurtzite GaN c-plane surfaces grown by MBE, including the c(6x12) on N-polar GaN(0001). Details of the system design and functionality will be presented.

Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

NASA Astrophysics Data System (ADS)

Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

2017-10-01

This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on- n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on- p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

Radiation enhancement in doped AlGaN-structures upon optical pumping

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E.; Malin, T. V.; Osinnykh, I. V.; Fateev, N. V.

2017-01-01

Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized Al x Ga1- x N/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of 260 THz for Al0.5Ga0.5N and 360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm-1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm-1 for Al0.74Ga0.26N at λ ≈ 468 nm.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Single photon emission from charged excitons in CdTe/ZnTe quantum dots

NASA Astrophysics Data System (ADS)

Belyaev, K. G.; Rakhlin, M. V.; Sorokin, S. V.; Klimko, G. V.; Gronin, S. V.; Sedova, I. V.; Mukhin, I. S.; Ivanov, S. V.; Toropov, A. A.

2017-11-01

We report on micro-photoluminescence studies of individual self-organized CdTe/ZnTe quantum dots intended for single-photon-source applications in a visible spectral range. The quantum dots surface density below 1010 per cm2 was achieved by using a thermally activated regime of molecular beam epitaxy that allowed fabrication of etched mesa-structures containing only a few emitting quantum dots. The single photon emission with the autocorrelation function g(2)(0)<0.2 was detected and identified as recombination of charged excitons in the individual quantum dot.

Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, Ming Y.; Haas, T. W.

1990-10-01

We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

2011-03-01

We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bae, Hopil

With the advent of new Internet services for exchaging not only texts and pictures but also home-made videos and high-definition movies, the appetite for more internet bandwidth is still growing at a fast pace. Satisfying these demands require extending the high-speed fiber optical networks all the way to the end users. This approach will require high-performance lasers, detectors, and modulators that are also very inexpensive and power-efficient. VCSELs are ideal light sources for this application due to their low power consumption, easier fiber coupling, ease of fabrication, and the possibility of dense 2-D integration. A new GaAs-based gain material, GaInNAsSb, can be an enabling technology for VCSELs in the 1.3-1.6mum wavelength range appropriate for optical communications. It can also enable high-power lasers for pumping Raman amplifiers, which can significantly increase the usable bandwidth of optical fibers. Growth of GaInNAsSb by molecular beam epitaxy has been very challenging, but various improvements in growth and annealing conditions lead to very low-threshold 1.55mum edge-emitting lasers and the first GaAs-based pulsed-mode 1.534mum VCSELs. Improving their temperature stability and achieving room-temperature continuous-wave(CW) VCSELs was the main objective of this thesis work. This thesis first discusses additional improvements in annealing and growth conditions, which led to a factor of 4 increase in the peak pholuminescence intensity. Edge-emitting lasers employing different numbers and structures of GaInNasSb QWs were compared, and the carrier leakage to the GaNAs barriers has been identified to be the dominant source of carrier recombination, by measurements using segmented contacts. Using the same triple QW structures and carefully designed AlGaAs/GaAs DBR mirrors, the first-ever all-epitaxial near-room-temperature CW VCSELs at 1528nm are realized on GaAs substrates.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

NASA Technical Reports Server (NTRS)

Peng, C. K.; Sinha, S.; Morkoc, H.

1987-01-01

Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Hidetoshi, E-mail: hsuzuki@cc.miyazaki-u.ac.jp; Nakata, Yuka; Takahasi, Masamitu

2016-03-15

The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain sizemore » was smaller for all film thicknesses.« less

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Xia, Y.; Brault, J.; Nemoz, M.; Teisseire, M.; Vinter, B.; Leroux, M.; Chauveau, J.-M.

2011-12-01

Nonpolar (112¯0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (112¯0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Novikov, S. V.; Powell, R. E. L.; Staddon, C. R.; Kent, A. J.; Foxon, C. T.

2014-10-01

Currently there is high level of interest in developing of vertical device structures based on the group III nitrides. We have studied n- and p-doping of free-standing zinc-blende GaN grown by plasma-assisted molecular beam epitaxy (PA-MBE). Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN. Controllable levels of doping with Si and Mg in free-standing zinc-blende GaN have been achieved by PA-MBE. The Si and Mg doping depth uniformity through the zinc-blende GaN layers have been confirmed by secondary ion mass spectrometry (SIMS). Controllable Si and Mg doping makes PA-MBE a promising method for the growth of conducting group III-nitrides bulk crystals.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridhara Rao, D. V.; Jain, Anubha; Lamba, Sushil

2013-05-13

The electron microscopy was used to characterize the AlN interlayer in Al{sub x}Ga{sub 1-x}N/AlN/GaN heterostructures grown by plasma assisted molecular beam epitaxy (PAMBE). We show that the AlN interlayer grown by PAMBE is without gallium and oxygen incorporation and the interfaces are coherent. The AlN interlayer has the ABAB stacking of lattice planes as expected for the wurtzite phase. High purity of AlN interlayer with the ABAB stacking leads to larger conduction band offset along with stronger polarization effects. Our studies show that the origin of lower sheet resistance obtained by PAMBE is the purity of AlN interlayer.

Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors

NASA Astrophysics Data System (ADS)

Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; Makitsubo, Hironobu; Kaneda, Hidehiro

2012-08-01

We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low-resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95% within the wavelength range of 40-200 μm, while low-resistivity ( ˜5 Ω cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.

Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Colniţă, Alia; Marconi, Daniel; Brătfălean, Radu Tiberiu; Turcu, Ioan

2018-04-01

The purpose of this work was to optimize a single-step fabrication process of silicon (Si) cones-like nanostructures on Si(111) reconstructed substrates. The substrate temperature is the most important parameter in the Si/Si growth, due to its high influence over the surface nanostructuring and the occurrence of well defined nanocones. We investigate the effect of different substrate temperatures on the density and size distributions of Si nanocones formed during the molecular beam epitaxy (MBE) deposition of Si/Si(111) 7 × 7 reconstructed surfaces. The nanocones were characterized using scanning tunnelling microscopy (STM) and the height and the bottom area distributions of the Si nanocones were assessed. It was found that the obtained distributions are interrelated suggesting the self-similarity of the nanostructures grown during the deposition protocol.

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

2018-05-01

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

NASA Astrophysics Data System (ADS)

Lin, Meng-Yu; Wang, Cheng-Hung; Pao, Chun-Wei; Lin, Shih-Yen

2015-09-01

Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600 °C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE.

Thermal conductivity of Bi2(SexTe1-x)3 alloy films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yoo, Taehee; Lee, Eungkyu; Dong, Sining; Li, Xiang; Liu, Xinyu; Furdyna, Jacek K.; Dobrowolska, Margaret; Luo, Tengfei

2017-06-01

We studied the thermal conductivity of Bi2Se3, Bi2Te3, and their alloy Bi2(SexTe1-x)3 at room temperature using time-domain thermoreflectance measurements. The Bi2(SexTe1-x)3 films with various concentrations of Se and Te prepared by molecular beam epitaxy on GaAs substrates were investigated to study the dependence of thermal conductivity on film composition. We observed that the Bi2(SexTe1-x)3 ternary alloys can have much lower thermal conductivity values compared to those of Bi2Se3 and Bi2Te3. These results may provide useful information for developing and engineering low thermal conductivity materials for thermoelectric applications.

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

1983-01-01

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J.; Riechert, H.

2015-05-01

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ok, Young-Woo; Choi, Chel-Jong; Seong, Tae-Yeon; Uesugi, K.; Suemune, I.

2001-07-01

Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.

Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

2017-01-01

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001).

PubMed

Yakimov, A I; Nikiforov, A I; Dvurechenskii, A V; Ulyanov, V V; Volodin, V A; Groetzschel, R

2006-09-28

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500 °C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02-2 ML s(-1), to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s(-1) to 9.8 nm at R = 2 ML s(-1). The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s(-1). Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (∼0.9).

InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

NASA Astrophysics Data System (ADS)

Liang, B. L.; Wang, Zh M.; Mazur, Yu I.; Strelchuck, V. V.; Holmes, K.; Lee, J. H.; Salamo, G. J.

2006-06-01

We systematically investigated the correlation between morphological and optical properties of InGaAs self-assembled quantum dots (QDs) grown by solid-source molecular beam epitaxy on GaAs (n 11)B (n = 9, 8, 7, 5, 3, 2) substrates. Remarkably, all InGaAs QDs on GaAs(n 11)B under investigation show optical properties superior to those for ones on GaAs(100) as regards the photoluminescence (PL) linewidth and intensity. The morphology for growth of InGaAs QDs on GaAs (n 11)B, where n = 9, 8, 7, 5, is observed to have a rounded shape with a higher degree of lateral ordering than that on GaAs(100). The optical property and the lateral ordering are best for QDs grown on a (511)B substrate surface, giving a strong correlation between lateral ordering and PL optical quality. Our results demonstrate the potential for high quality InGaAs QDs on GaAs(n 11)B for optoelectronic applications.

MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers

NASA Astrophysics Data System (ADS)

Gutowski, P.; Sankowska, I.; Karbownik, P.; Pierścińska, D.; Serebrennikova, O.; Morawiec, M.; Pruszyńska-Karbownik, E.; Gołaszewska-Malec, K.; Pierściński, K.; Muszalski, J.; Bugajski, M.

2017-05-01

We investigate growth conditions for strain-compensated In0.67Ga0.33As/In0.36Al0.64As/InP quantum cascade lasers (QCLs) by solid-source molecular beam epitaxy (SSMBE). The extensive discussion of growth procedures is presented. The technology was first elaborated for In0.53Ga0.47As/In0.52Al0.48As material system lattice matched to InP. After that QCLs with lattice matched active region were grown for validation of design and obtained material quality. The next step was elaboration of growth process and especially growth preparation procedures for strain compensated active regions. The grown structures were examined by HRXRD, AFM, and TEM techniques. The on-line implementation of obtained results in subsequent growth runs was crucial for achieving room temperature operating 4.4-μm lasers. For uncoated devices with Fabry-Perrot resonator up to 250 mW of optical power per facet at 300 K was obtained under pulsed conditions. The paper focuses on MBE technology and presents developed algorithm for strain-compensated QCL growth.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

NASA Astrophysics Data System (ADS)

Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

2017-12-01

Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

DOE PAGES

Young, E. C.; Grandjean, N.; Mates, T. E.; ...

2016-11-23

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It has been found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ~10 12 cm -2, which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperaturemore » is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 10 18 cm -3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.« less

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

2017-09-01

Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be <1% over the area of a 7 cm × 7.5 cm wafer. The films are further characterized by Fourier-transform infrared spectroscopy, optical microscopy, and Hall measurements. Additionally, defect maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

Mass Spectrometry as a Preparative Tool for the Surface Science of Large Molecules

NASA Astrophysics Data System (ADS)

Rauschenbach, Stephan; Ternes, Markus; Harnau, Ludger; Kern, Klaus

2016-06-01

Measuring and understanding the complexity that arises when nanostructures interact with their environment are one of the major current challenges of nanoscale science and technology. High-resolution microscopy methods such as scanning probe microscopy have the capacity to investigate nanoscale systems with ultimate precision, for which, however, atomic scale precise preparation methods of surface science are a necessity. Preparative mass spectrometry (pMS), defined as the controlled deposition of m/z filtered ion beams, with soft ionization sources links the world of large, biological molecules and surface science, enabling atomic scale chemical control of molecular deposition in ultrahigh vacuum (UHV). Here we explore the application of high-resolution scanning probe microscopy and spectroscopy to the characterization of structure and properties of large molecules. We introduce the fundamental principles of the combined experiments electrospray ion beam deposition and scanning tunneling microscopy. Examples for the deposition and investigation of single particles, for layer and film growth, and for the investigation of electronic properties of individual nonvolatile molecules show that state-of-the-art pMS technology provides a platform analog to thermal evaporation in conventional molecular beam epitaxy. Additionally, it offers additional, unique features due to the use of charged polyatomic particles. This new field is an enormous sandbox for novel molecular materials research and demands the development of advanced molecular ion beam technology.

Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Toporkov, M.; Ullah, M. B.; Demchenko, D. O.; Avrutin, V.; Morkoç, H.; Özgür, Ü.

2017-06-01

Owing to its large bandgap covering the UV region of the optical spectrum, the quaternary BeMgZnO is of interest, particularly the collective effect Be and Mg fluxes on the solid composition. Incorporation of Be, Mg, and Zn in the wurtzite BeMgZnO quaternary alloy was found to depend strongly on the reactive-oxygen to metal flux ratio during growth by plasma-assisted molecular beam epitaxy under metal-rich conditions. For a given set of metal fluxes, reducing the VI/II (oxygen to metal flux) ratio from 1.0 to 0.6 increased the bandgap from 4.0 eV to 4.5 eV and decreased the c lattice parameter from 5.08 Å to 5.02 Å. The corresponding change in composition from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.34Zn0.56O was consistent with a systematic reduction in the Zn incorporation coefficient from 0.23 to 0.12, while those of Be and Mg remained at ∼1. This behavior was explained by the substantially lower formation enthalpies of wurtzite BeO and MgO, -5.98 eV and -5.64 eV, respectively, compared to that of ZnO, -3.26 eV, determined using first principles calculations, as well as the high equilibrium vapor pressure of Zn, which results in re-evaporation of excessive Zn from the growing surface, details of which are the topic of this manuscript.

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Fedler, F.; Hauenstein, R. J.

1999-10-01

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1-xN epitaxial materials. HRXRD results for InxGa1-xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x¯ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x¯ with increasing growth temperature within the narrow range 590-670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO

NASA Astrophysics Data System (ADS)

Wicks, R.; Altendorf, S. G.; Caspers, C.; Kierspel, H.; Sutarto, R.; Tjeng, L. H.; Damascelli, A.

2012-04-01

We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO1 -xNx films with good control over the films' nitrogen concentration. In situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connected to the formation Eu3+4f6 and a corresponding decrease in the number of Eu2+4f7, indicating that nitrogen is being incorporated in its 3- oxidation state. While small amounts of Eu3+ in over-oxidized Eu1-δO thin films lead to a drastic suppression of the ferromagnetism, the formation of Eu3+ in EuO1-xNx still allows the ferromagnetic phase to exist with an unaffected Tc, thus providing an ideal model system to study the interplay between the magnetic f7 (J = 7/2) and the non-magnetic f6 (J = 0) states close to the Fermi level.

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

1997-07-01

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

Method of deposition by molecular beam epitaxy

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-01-10

A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Abe, Ryota; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-08-01

Growth optimization toward low angle incidence microchannel epitaxy (LAIMCE) of GaN was accomplished using ammonia-based metal-organic molecular beam epitaxy (NH3-based MOMBE). Firstly, the [NH3]/[trimethylgallium (TMG)] ratio (R) dependence of selective GaN growth was studied. The growth temperature was set at 860 °C while R was varied from 5 to 200 with precursors being supplied parallel to the openings cut in the SiO2 mask. The selectivity of the growth was superior for all R, because TMG and NH3 preferably decompose on the GaN film. The formation of {112¯0}GaN or {112¯2}GaN sidewalls and (0001)GaN surface were observed by the change in R. The intersurface diffusion of Ga adatoms was also changed by a change in R. Ga adatoms migrate from the sidewalls to the top at R lower than 50, whereas the migration weakened with R greater than 100. Secondly, LAIMCE was optimized by changing the growth temperature. Consequently, 6 μm wide lateral overgrowth in the direction of precursor incidence was achieved with no pit after etching by H3PO4, which was six times wider than that in the opposite direction.

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Zhongguang; Khanaki, Alireza; Tian, Hao

2016-07-25

Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layersmore » were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.« less

Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1996-01-01

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Fang; Zhang, Qinghua; Yang, Zhenzhong

2015-08-24

The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth.more » Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.« less

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, C. Y.; Torfi, A.; Pei, C.

2016-05-09

In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientationmore » presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.« less

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudrawiec, R.; Janicki, L.; Gladysiewicz, M.

2013-07-29

Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 ± 0.05 and 0.60 ± 0.05 eV below the conduction band formore » N- and Ga-face GaN surface, respectively.« less

Tin-Assisted Synthesis of ɛ -Ga2O3 by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Kracht, M.; Karg, A.; Schörmann, J.; Weinhold, M.; Zink, D.; Michel, F.; Rohnke, M.; Schowalter, M.; Gerken, B.; Rosenauer, A.; Klar, P. J.; Janek, J.; Eickhoff, M.

2017-11-01

The synthesis of ɛ -Ga2O3 and β -Ga2O3 by plasma-assisted molecular beam epitaxy on (001 )Al2O3 substrates is studied. The growth window of β -Ga2O3 in the Ga-rich regime, usually limited by the formation of volatile gallium suboxide, is expanded due to the presence of tin during the growth process, which stabilizes the formation of gallium oxides. X-ray diffraction, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, Raman spectroscopy, and atomic force microscopy are used to analyze the influence of tin on the layer formation. We demonstrate that it allows the synthesis of phase-pure ɛ -Ga2O3 . A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhanovskaya, N. V., E-mail: NataliaKryzh@gmail.com; Polubavkina, Yu. S.; Nevedomskiy, V. N.

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of themore » emission line.« less

Soft X-ray multilayers produced by sputtering and molecular beam epitaxy (MBE) - Substrate and interfacial roughness

NASA Astrophysics Data System (ADS)

Kearney, Patrick A.; Slaughter, J. M.; Powers, K. D.; Falco, Charles M.

1988-01-01

Roughness measurements were made on uncoated silicon wafers and float glass using a WYKO TOPO-3D phase shifting interferometry, and the results are reported. The wafers are found to be slightly smoother than the flat glass. The effects of different cleaning methods and of the deposition of silicon 'buffer layers' on substrate roughness are examined. An acid cleaning method is described which gives more consistent results than detergent cleaning. Healing of the roughness due to sputtered silicon buffer layers was not observed on the length scale probed by the WYKO. Sputtered multilayers are characterized using both the WYKO interferometer and low-angle X-ray diffraction in order to yield information about the roughness of the top surface and of the multilayer interfaces. Preliminary results on film growth using molecular beam epitaxy are also presented.

Observation of spin-glass behavior in homogeneous (Ga,Mn)N layers grown by reactive molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Dhar, S.; Brandt, O.; Trampert, A.; Friedland, K. J.; Sun, Y. J.; Ploog, K. H.

2003-04-01

We present a detailed study of the magnetic properties of (Ga,Mn)N layers grown directly on 4H-SiC substrates by reactive molecular-beam epitaxy. X-ray diffraction and transmission electron microscopy demonstrates that homogeneous (Ga,Mn)N alloys of high crystal quality can be synthesized by this growth method up to a Mn-content of 10 12 %. Using a variety of magnetization experiments (temperature-dependent dc magnetization, isothermal remanent magnetization, frequency and field dependent ac susceptibility), we demonstrate that insulating (Ga,Mn)N alloys represent a Heisenberg spin-glass with a spin-freezing temperature around 4.5 K. We discuss the origins of this spin-glass characteristics in terms of the deep-acceptor nature of Mn in GaN and the resulting insulating character of this compound.

Effects of growth rate on structural property and adatom migration behaviors for growth of GaInNAs/GaAs (001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Li, Jingling; Gao, Peng; Zhang, Shuguang; Wen, Lei; Gao, Fangliang; Li, Guoqiang

2018-03-01

We have investigated the structural properties and the growth mode of GaInNAs films prepared at different growth rates (Rg) by molecular beam epitaxy. The crystalline structure is studied by high resolution X-ray diffraction, and the evolution of GaInNAs film surface morphologies is studied by atomic force microscopy. It is found that both the crystallinity and the surface roughness are improved by increasing Rg, and the change in the growth mode is attributed to the adatom migration behaviors particularly for In atoms, which is verified by elemental analysis. In addition, we have presented some theoretical calculation results related to the N adsorption energy to show the unique N migration behavior, which is instructive to interpret the growth mechanism of GaInNAs films.

Microstructure of In x Ga1-x N nanorods grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Webster, R. F.; Soundararajah, Q. Y.; Griffiths, I. J.; Cherns, D.; Novikov, S. V.; Foxon, C. T.

2015-11-01

Transmission electron microscopy is used to examine the structure and composition of In x Ga1-x N nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core-shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

NASA Astrophysics Data System (ADS)

Zhang, Meng; Bhattacharya, Pallab; Guo, Wei; Banerjee, Animesh

2010-03-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm-3. The corresponding doping efficiency and hole mobility are ˜4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

NASA Astrophysics Data System (ADS)

Liu, Shuanglong; Sheng, Bowen; Wang, Xinqiang; Dong, Dashan; Wang, Ping; Chen, Zhaoying; Wang, Tao; Rong, Xin; Li, Duo; Yang, Liuyun; Liu, Shangfeng; Li, Mo; Zhang, Jian; Ge, Weikun; Shi, Kebin; Tong, Yuzhen; Shen, Bo

2018-06-01

High-quality single-crystalline aluminum films have been grown on Si(111) substrates by molecular beam epitaxy. The x-ray diffraction rocking curve of the (111) plane of the Al film shows a full width at half maximum of 564 arc sec for the sample grown at 100 °C, where the surface is atomically flat with a root-mean-square roughness of 0.40 nm in a scanned area of 3 × 3 μm2. By using such a high-quality Al film, we have demonstrated a room temperature ultraviolet surface-plasmon-polariton nanolaser at a wavelength of 360 nm with a threshold as low as ˜0.2 MW/cm2, which provides a powerful evidence for potential application of the single-crystalline Al film in plasmonic devices.

Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wofford, Joseph M.; Speck, Florian; Seyller, Thomas; Lopes, Joao Marcelo J.; Riechert, Henning

2016-07-01

The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al2O3(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

Examination of the nature of lattice matched III V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces

NASA Astrophysics Data System (ADS)

Thomsen, M.; Ghaisas, S. V.; Madhukar, A.

1987-07-01

A previously developed computer simulation of molecular beam epitaxial growth of III-V semiconductors based on the configuration dependent reactive incorporation (CDRI) model is extended to allow for two different cation species. Attention is focussed on examining the nature of interfaces formed in lattice matched quantum well structures of the form AC/BC/AC(100). We consider cation species with substantially different effective diffusion lengths, as is the case with Al and Ga during the growth of their respective As compounds. The degree of intermixing occuring at the interface is seen to be dependent upon, among other growth parameters, the pressure of the group V species during growth. Examination of an intraplanar order parameter at the interfaces reveals the existence of short range clustering of the cation species.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; DeCapua, Matthew C.; Player, Gabriel; Heiman, Don

2016-10-01

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

PubMed Central

Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Müller, Mathias; August, Olga; Bertram, Frank; Christen, Jürgen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang

2017-01-01

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1−xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ~220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices. PMID:28417975

Magnetic properties of low-moment ferrimagnetic Heusler Cr 2CoGa thin films grown by molecular beam epitaxy

DOE PAGES

Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; ...

2016-10-31

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr 2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87more » meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.« less

Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy

NASA Astrophysics Data System (ADS)

Dahiya, Vinita; Zamiri, Marziyeh; So, Mo Geun; Hollingshead, David A.; Kim, JongSu; Krishna, Sanjay

2018-06-01

In this article, we report the formation of InAs quantum ring nanostructures (QRNs) on GaSb (0 0 1) surface by droplet epitaxy (DE) mode using molecular beam epitaxy. We examined the impact of various growth conditions, including substrate temperature (Ts), As2 beam equivalent pressure (BEP) and surface stoichiometry, on the shape, density and size of the InAs QRNs. We confirmed that the InAs QRNs have better rotational symmetry at relatively high Ts and low As2 BEP. The symmetry of the QRN is due to the isotropic indium (In) out-migration along [1 1 0] and [1 -1 0], controlled via change in stoichiometry (surface As coverage) with temperature and the As2 BEP. These results indicate that we can realize InAs QRN on GaSb surface by DE process.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Role of topographical defects in organic film growth of 4,4' -biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study

NASA Astrophysics Data System (ADS)

Khokhar, Fawad S.; van Gastel, Raoul; Poelsema, Bene

2010-11-01

We have used low-energy electron microscopy (LEEM) to study the formation of self-assembled molecular networks on graphene sheets. 4,4' -biphenyldicarboxylic acid (BDA) molecular networks were grown using organic molecular beam epitaxy. LEEM images provide direct insight in the growth dynamics and show that defects in the graphene play a crucial role in the final morphology of the molecular film that forms. BDA is demonstrated to form hydrogen bond-stabilized chains on graphene. Dark-field LEEM images reveal that the same defects that determine the morphology of the film, also direct the orientation of the domains, highlighting the importance of understanding the role of defects in epitaxial processes on graphene.

Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications

DTIC Science & Technology

2009-05-01

shown in Fig. 1 was grown by molecular - beam epitaxy (MBE) on 3-inch semi-insulating GaAs substrates. AlGaSb was used as a buffer. AlSb was used as... beam epitaxy for low-power applications,” J. Vac. Sci. Technol. B. 24, pp. 2581-2585, 2006. [12] Y. C. Chou, L. J. Lee, J. M. Yang, M. D. Lange, P...passivation AlGaSb buffer Figure 1: Cross section of an AlSb/InAs HEMT device on a 3-inch GaAs substrate. The interface region between the

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Direct observation of spin-resolved full and empty electron states in ferromagnetic surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berti, G., E-mail: giulia.berti@polimi.it; Calloni, A.; Brambilla, A.

2014-07-15

We present a versatile apparatus for the study of ferromagnetic surfaces, which combines spin-polarized photoemission and inverse photoemission spectroscopies. Samples can be grown by molecular beam epitaxy and analyzed in situ. Spin-resolved photoemission spectroscopy analysis is done with a hemispherical electron analyzer coupled to a 25 kV-Mott detector. Inverse photoemission spectroscopy experiments are performed with GaAs crystals as spin-polarized electron sources and a UV bandpass photon detector. As an example, measurements on the oxygen passivated Fe(100)-p(1×1)O surface are presented.

Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Yong-Lim

Si1-yCy alloys were grown on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6/CH3 SiH3 mixtures as a function of C concentration y (0 to 2.6 at %) and deposition temperature Ts (500--600°C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In-situ isotopically-tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregates to the second-layer during steady-state Si1-y Cy(001) growth. This, in turn, results in charge-transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θ Si*(y, Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H 6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts, JSi2H6,J CH3SiH3 ) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in good agreement with the experimental data. At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations

NASA Astrophysics Data System (ADS)

Kanjanachuchai, Songphol; Wongpinij, Thipusa; Kijamnajsuk, Suphakan; Himwas, Chalermchai; Panyakeow, Somsak; Photongkam, Pat

2018-04-01

Lattice-mismatched layers of GaAs/InGaAs are grown on GaAs(001) using molecular beam epitaxy and subsequently heated in vacuum while the surface is imaged in situ using low-energy electron microscopy, in order to study (i) the nucleation of group-III droplets formed as a result of noncongruent sublimation and (ii) the dynamics of these self-propelled droplets as they navigate the surface. It is found that the interfacial misfit dislocation network not only influences the nucleation sites of droplets, but also exerts unusual steering power over their subsequent motion. Atypical droplet flow patterns including 90° and 180° turns are found. The directions of these dislocations-guided droplets are qualitatively explained in terms of in-plane and out-of-plane stress fields associated with the buried dislocations and the driving forces due to chemical potential and stress gradients typical of Marangoni flow. The findings would benefit processes and devices that employ droplets as catalysts or active structures such as droplet epitaxy of quantum nanostructures, vapor-liquid-solid growth of nanowires, or the fabrication of self-integrated circuits.

Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 {mu}m p-i-n photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wicaksono, S.; Yoon, S.F.; Loke, W.K.

2006-05-15

GaAsSbN layers closely lattice-matched to GaAs were studied for application as the intrinsic layer in GaAs-based 1.3 {mu}m p-i-n photodetector. The GaAsSbN was grown as the intrinsic layer for the GaAs/GaAsSbN/GaAs photodetector structure using solid-source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and valved antimony cracker source. The lattice mismatch of the GaAsSbN layer to GaAs was kept below 4000 ppm, which is sufficient to maintain coherent growth of {approx}0.45 {mu}m thick GaAsSbN on the GaAs substrate. The growth temperature of the GaAsSbN layer was varied from 420-480 deg. C. All samples exhibit room temperaturemore » photocurrent response in the 1.3 {mu}m wavelength region, with dark current density of {approx}0.3-0.5 mA/cm{sup 2} and responsivity of up to 33 mA/W at 2 V reverse bias. Reciprocal space maps reveal traces of point defects and segregation (clustering) of N and Sb, which may have a detrimental effect on the photocurrent responsivity.« less

Design and Characterization of Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1992-12-01

technology to make VCSELs (e.g. Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD)) motivated the research in this area over the...Resistances for Current Injected VCSELs 3-14 4.1. Equipment Configuration used for Output Beam Characterization . . . 4-1 4.2. Optical Pump Beam and Focusing...pursued over the past few years because VCSELs have ad- ditional inherent advantages. The VCSEL design exhibits better exit beam quality, is of smaller

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

PubMed

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Microwave Semiconductor Research-Materials, Devices and Circuits.

DTIC Science & Technology

1987-10-01

Quantum Well and Graded Refractive Index Separate Confinement Heterostructure Quantum Well Lasers Grown Via Molecular Beam Epitaxy" JSEP PUBLICATIONS...J.M. Ballantyne and A.J. Sievers, J. Appl. Phys., 58, 3145 (1985). 6. "Epitaxial Growth and Characterization of Indian Phosphide and Gallium Indian...Approach to Dispersion Analysis in Graded Index Optical Fiber", by H.J. Carlin and Henry Zmuda. DEGREES 1. Henry Zmuda, Ph.D., July 1984 "A New Approach

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

The International Symposium on Si-Based Molecular Beam (4th) held in Anaheim, California, on 29 April-3 May 1991

DTIC Science & Technology

1992-04-14

P.J. Restle, and S.S. Iyer SILICON-BASED LONG WAVELENGTH INFRARED DETECTORS FABRICATED BY MOLECULAR BEAM EPITAXY 477 T.L. Lin, E.W. Jones, T. George, A...behaviour was defect generation cause by cascade propagation by the Si+ ions. Two important questions arise in use of PED. Firstly, relying as it does...Avenue, Santa Clara, CA 95052 ABSTRACT Strong hole intersubband infrared absorption in 6-doped Si multiple quantum wells is observed. The structures

Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei

2016-01-06

Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe 2 by MBE, MoSe 2 on Bi 2Se 3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi 2Te 3 andmore » a triple atomic layer of MoTe 2. In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

NASA Technical Reports Server (NTRS)

Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

1991-01-01

Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. J.; Chang, Y.; Hou, Y. B.

2011-09-15

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermalmore » strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.« less

Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie S.; van Helvoort, Antonius T. J.; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi

2017-12-01

We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 109 cm-2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission.

VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

PubMed Central

Zhang, Dong; Sun, Hong-Jun; Wang, Min-Huan; Miao, Li-Hua; Liu, Hong-Zhu; Zhang, Yu-Zhi; Bian, Ji-Ming

2017-01-01

Vanadium dioxide (VO2) thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF)-plasma assisted oxide molecular beam epitaxy (O-MBE). The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses. An excellent reversible metal-to-insulator transition (MIT) characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR) transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT) deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows. PMID:28772673

Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

DOE PAGES

Burton, George L.; Diercks, David R.; Perkins, Craig L.; ...

2017-07-01

Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth ofmore » films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.« less

Self-consistent expansion for the molecular beam epitaxy equation

NASA Astrophysics Data System (ADS)

Katzav, Eytan

2002-03-01

Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-->-r',t-t')=2D0\\|r-->- r'\\|2ρ-dδ(t-t'). I find a lower critical dimension dc(ρ)=4+2ρ, above which the linear MBE solution appears. Below the lower critical dimension a ρ-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

NASA Astrophysics Data System (ADS)

Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

2006-06-01

The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

2018-04-01

Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

Self-consistent expansion for the molecular beam epitaxy equation.

PubMed

Katzav, Eytan

2002-03-01

Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-r('),t-t('))=2D(0)[r-->-r(')](2rho-d)delta(t-t(')). I find a lower critical dimension d(c)(rho)=4+2rho, above which the linear MBE solution appears. Below the lower critical dimension a rho-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia

2014-02-17

The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

2018-01-01

We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

Fabrication of wide-band-gap Mg{sub x}Zn{sub 1-x}O quasi-ternary alloys by molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Hiroshi; Fujita, Shigeo; Fujita, Shizuo

2005-05-09

A series of wurtzite MgZnO quasi-ternary alloys, which consist of wurtzite MgO/ZnO superlattices, were grown by molecular-beam epitaxy on sapphire substrates. By changing the thicknesses of ZnO layers and/or of MgO layers of the superlattice, the band-gap energy was artificially tuned from 3.30 to 4.65 eV. The highest band gap, consequently realized by the quasi-ternary alloy, was larger than that of the single MgZnO layer, we have ever reported, keeping the wurtzite structure. The band gap of quasi-ternary alloys was well analyzed by the Kronig-Penny model supposing the effective masses of wurtzite MgO as 0.30m{sub 0} and (1-2)m{sub 0} formore » electrons and holes, respectively.« less

Graphitic carbon grown on fluorides by molecular beam epitaxy.

PubMed

Jerng, Sahng-Kyoon; Lee, Jae Hong; Kim, Yong Seung; Chun, Seung-Hyun

2013-01-03

We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate.

Graphitic carbon grown on fluorides by molecular beam epitaxy

PubMed Central

2013-01-01

We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate. PMID:23286607

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

NASA Astrophysics Data System (ADS)

Mizutani, Mitsuhiro; Teramae, Fumiharu; Takeuchi, Kazutaka; Murase, Tatsunori; Naritsuka, Shigeya; Maruyama, Takahiro

2006-04-01

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

PubMed Central

Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

2016-01-01

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

Hybrid Molecular and Spin-Semiconductor Based Research

DTIC Science & Technology

2005-02-02

thick layers of low- temperature-grown (LTG) GaAs, i.e. GaAs grown at lower than normal substrate temperatures in a molecular beam epitaxy system...1999 – Oct.31, 2004 4. TITLE AND SUBTITLE Hybrid Molecular and Spin-Semiconductor Based research 5. FUNDING NUMBERS DAAD19-99-1-0198...spintronic devices. Thrust III is entitled “ Molecular Electronics” and its objective is to develop, characterize and model organic/inorganic

X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

NASA Technical Reports Server (NTRS)

Park, Yoonjoon; Choi, Sang Hyouk; King, Glen C.; Elliott, James R.; Dimarcantonio, Albert L.

2010-01-01

A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

InGaAs Multiple Quantum Well Modulating Retro-reflector for Free Space Optical Communications

DTIC Science & Technology

2002-01-01

PIN optical modulators grown on GaAs substrates by molecular beam epitaxy ,J. Vac Sci. B 18, 1609-16 13 (2000). Peter G. Goetz, W. S. Rabinovich...reflector is then interrogated by a cw laser beam from a conventional optical communications system and returns a modulated signal beam to the...optical communication systems. By mounting an electro-optic shutter in front of the corner- cube, the retro-reflected beam can be turned on or off (or at

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, S. V.; Ting, M.; Yu, K. M.

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers hasmore » been determined.« less

MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

NASA Astrophysics Data System (ADS)

El Kazzi, S.; Mortelmans, W.; Nuytten, T.; Meersschaut, J.; Carolan, P.; Landeloos, L.; Conard, T.; Radu, I.; Heyns, M.; Merckling, C.

2018-04-01

We present in this paper the use of Gas Source Molecular Beam Epitaxy for the large-scale growth of transition metal dichalcogenides. Fiber-textured MoS2 co-deposited thin films (down to 1 MLs) are grown on commercially 200 mm wafer size templates where MX2 crystalline layers are achieved at temperatures ranging from RT to 550 °C. Raman Spectroscopy and photoluminescence measurements along with X-Ray Photoelectron Spectroscopy show that a low growth rate is essential for complete Mo sulfurization during MoS2 co-deposition. Finally, cross-section Transmission Electron Microscopy investigations are discussed to highlight the influence of SiO2 and Al2O3 used surfaces on MoS2 deposition.

A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S.; Kokh, K. A.; Tereshchenko, O. E.

2018-03-01

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy.

DTIC Science & Technology

1980-03-01

incident beams of As and P, respectively. The high vapor pressure , group V elements have a very short lifetime on the heated substrate unless there is...oven loaded with a high vapor pressure , group V element such as arsenic and phosphorous. An error analysis of Equation 5 reveals that incremental

Vertical-cavity surface-emitting lasers - Design, growth, fabrication, characterization

NASA Astrophysics Data System (ADS)

Jewell, Jack L.; Lee, Y. H.; Harbison, J. P.; Scherer, A.; Florez, L. T.

1991-06-01

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 microns to above 50 microns. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching; packaging and arrays; and ultrasmall devices.

Control of Anion in Corporation in the Molecular Beam Epitaxy of Ternary Antimonide Superlattices for Very Long Wavelength Infrared Detection (Postprint)

DTIC Science & Technology

2015-10-01

ASSIGNED DISTRIBUTION STATEMENT. //Signature// //Signature// GAIL J. BROWN DIANA M. CARLIN, Chief Nanoelectronic ...Materials Branch Nanoelectronic Materials Branch Functional Materials Division Functional Materials Division //Signature// KAREN

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

NASA Technical Reports Server (NTRS)

Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

1989-01-01

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.

PubMed

Mariager, Simon O; Lauridsen, Søren L; Sørensen, Claus B; Dohn, Asmus; Willmott, Phillip R; Nygård, Jesper; Feidenhans'l, Robert

2010-03-19

GaAs nanowires were grown by molecular beam epitaxy and studied by glancing-angle x-ray diffraction during five different stages of the growth process. An entire forest of randomly positioned epitaxial nanowires was sampled simultaneously and a large variation in the Au-Ga catalyst was found. Au, AuGa, AuGa(2) and the hexagonal beta phase were all identified in several orientations and in similar amounts. The nanowires are shown to consist of regular zinc blende crystal, its twin and the hexagonal wurtzite. The evolution of the various Au-Ga catalysts and the development in the twin to the wurtzite abundance ratio indicate that the Au catalyst is saturated upon initiation of growth leading to an increased amount of wurtzite structure in the wires. A specular x-ray scan identifies the various Au-Ga alloys, three Au lattice constants and a rough interface between nanowires and catalyst. Reciprocal space maps were obtained around Au Bragg points and show the development of the Au catalyst from a distribution largely oriented with respect to the lattice to a non-uniform distribution with several well-defined lattice constants.

The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

2013-05-01

In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhou, Yunxia; Zhu, Jun; Liu, Xingpeng; Wu, Zhipeng

Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) 〈100〉 PZT//(002) 〈100〉 STO//(001) 〈110〉 GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45∘ in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5G (100mW/cm2) illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Growth of beta-MnO2 Films on TiO2(110) by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chambers, Scott A.; Liang, Yong

Discusses the essential need to understand the heterogeneous chemistry of mineral surfaces at a molecular level for accurate modeling of surface complexion processes in natural environments. Describes the first MBE growth and characterization of ultrathin films of B-MnO2 on TiO2 (110).

Chemical Beam Epitaxial Growth of Indium Phosphide Using Alternative, Safer Phosphorus Sources

NASA Astrophysics Data System (ADS)

Kim, Chungwoo

1995-11-01

Chemical beam epitaxy (CBE) is a relatively new III-V semiconductor growth technique that combines important advantages of molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE). Although CBE grown-InP using phosphine (PH_3) combined with trimethylindium (TMIn) or triethylindium (TEIn) has produced high quality material comparable to OMVPE-and gas source MBE-grown InP, the highly hazardous and toxic nature of PH_3 is becoming a main obstacle to mass production of semiconductor devices. In this dissertation, InP epilayers were grown using tertiarybutylphosphine (TBP) and bisphosphinoethane (BPE) as possible replacements for PH_3, together with ethyldimethylindium (EDMIn) as the indium source. For the first time, InP epilayers have been grown using TBP and EDMIn by CBE. The surface morphology and the electrical and optical properties improved with increasing substrate and cracker cell temperatures and input V/III ratio. High quality n-type InP epilayers with electron mobilities of up to 3830 cm^2/Vs and net carrier concentrations of approximately 6 times 10^{14} cm^{-3} at room temperature were achieved at a growth temperature of 500^ circC using a V/III ratio of 70 and a TBP cracker cell temperature of 900^circ C. Strong band-edge emission was observed at growth temperatures between 460 and 500^circ C. The bound exciton halfwidth of the sample grown at 500^circC was as narrow as 3.6 meV at 14 K with a barely observable acceptor related peak indicating a very low concentration of acceptors. For growth of InP using BPE and EDMIn, good surface morphologies were obtained at a substrate temperature of 485^circC using V/III ratios of >=q53. At fixed growth and cracker cell temperatures of 485 and 800^circ C, respectively, the net carrier concentration at a V/III ratio of 53 was 7.8 times 10 ^{15} at room temperature and 3.2 times 10^{15} cm^{-3} at 77 K with respective electron mobilities of 3,630 and 21,800 cm^2 /Vs. The 14 K PL spectra were dominated by band -edge emission and exhibited very weak acceptor related peak intensities for InP layers grown at 485^ circC for several different V/III ratios and cracker cell temperatures. The narrowest value of FWHM for the band edge emission was 3.5 meV at 14 K.

GaAs quantum dots in a GaP nanowire photodetector

NASA Astrophysics Data System (ADS)

Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

2018-03-01

We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gálvez, S.; Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing

NASA Astrophysics Data System (ADS)

Tang, Jun; Liu, Zhong-Liang; Kang, Chao-Yang; Pan, Hai-Bin; Wei, Shi-Qiang; Xu, Peng-Shou; Gao, Yu-Qiang; Xu, Xian-Gang

2009-08-01

An epitaxial graphene (EG) layer is successfully grown on a Si-terminated 6H-SiC (0001) substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by reflection high energy diffraction (RHEED), Raman spectroscopy and atomic force microscopy (AFM). Graphene diffraction streaks can be seen in RHEED. The G and 2D peaks of graphene are clearly observed in the Raman spectrum. The AFM results show that the graphene nominal thickness is about 4-10 layers.

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

PubMed

Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

2015-10-05

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900-1200 °C temperature range

NASA Astrophysics Data System (ADS)

Tamariz, Sebastian; Martin, Denis; Grandjean, Nicolas

2017-10-01

We present a comprehensive study of AlN growth on Si(1 1 1) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 × 7 surface reconstruction by reflection high energy electron diffraction can be misleading as this technique is not sensitive to low density surface defects like SiC crystallites. A careful in situ cleaning procedure with annealing cycles at 1100 °C allows getting rid of any surface defects, as shown by atomic force microscopy imaging. Then, we explore the effect of the growth temperature on the surface morphology and structural properties of 100 nm thick AlN epilayers. At 1200 °C, the growth proceeds with the step flow mode regime, which induces spiral-growth around screw-type dislocations and therefore surface roughening. On the other hand, a smooth surface morphology can be achieved by setting the temperature at 1100 °C, which corresponds to the growth mode transition from two-dimensional nucleation to step flow. A further decrease of the growth temperature to 900 °C leads to surface defects ascribed to polarity inversion domains. Similar defects are observed for growths performed at 1100 °C when the NH3 flow is reduced below 100 sccm. This points out the sensitivity of AlN to the surface stoichiometry.

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

NASA Astrophysics Data System (ADS)

Burnham, Shawn D.; Namkoong, Gon; Look, David C.; Clafin, Bruce; Doolittle, W. Alan

2008-07-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7×1020cm-3, leading to a hole concentration as high as 4.5×1018cm-3 at room temperature, with a mobility of 1.1cm2V-1s-1 and a resistivity of 1.3Ωcm. At 580K, the corresponding values were 2.6×1019cm-3, 1.2cm2V-1s-1, and 0.21Ωcm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

PubMed

Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2018-04-30

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Synthesis of Multifunctional Materials

DTIC Science & Technology

2006-09-01

temperatures of 600’C and higher, whereas layers grown at lower temperature contained PbO inclusions. Growth of Pb(ZrxTi1 ..)0 3 ( PZT ) films by molecular...beam epitaxy was demonstrated for the first time. Single-crystal, single-phase PZT films were grown on (001) SrTiO3 substrates at a growth temperature...compounds of the PZT system, PbTiO 3 and PbZrO 3, and three-dimensional growth mode for PZT films of intermediate compositions. Epitaxial growth of PbO

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

NASA Technical Reports Server (NTRS)

Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

1991-01-01

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE PAGES

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R; ...

2017-08-12

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Ferrer, Domingo A.; Bank, Seth R.

2011-08-01

We present a growth method that overcomes the mismatch in rotational symmetry of ErAs and conventional III-V semiconductors, allowing for epitaxially integrated semimetal/semiconductor heterostructures. Transmission electron microscopy and reflection high-energy electron diffraction reveal defect-free overgrowth of ErAs layers, consisting of >2× the total amount of ErAs that can be embedded with conventional layer-by-layer growth methods. We utilize epitaxial ErAs nanoparticles, overgrown with GaAs, as a seed to grow full films of ErAs. Growth proceeds by diffusion of erbium atoms through the GaAs spacer, which remains registered to the underlying substrate, preventing planar defect formation during subsequent GaAs growth. This growth method is promising for metal/semiconductor heterostructures that serve as embedded Ohmic contacts to epitaxial layers and epitaxially integrated active plasmonic devices.

Studies of the Initial Stages of Epitaxial Growth of Germanium on Silicon

NASA Astrophysics Data System (ADS)

Krishnamurthy, Mohan

The epitaxial growth of ultra-thin films (< 1nm thick) of Ge on Si(100) has been studied in -situ in an Ultra High Vacuum-Scanning Transmission Electron Microscope. Ge was deposited on clean Si(100) using molecular beam techniques to study two types of growth processes, Molecular Beam Epitaxy (MBE) and Solid Phase MBE. Ge grows in the Stranski-Krastanov growth mode, forming islands after initial layer growth. This islanding transition has been studied with high spatial resolution biassed Secondary Electron Imaging and Auger spectroscopy and imaging. Ex -situ Transmission Electron Microscopy (TEM) and Reflection High Energy Diffraction (RHEED) were also used to characterize the transition. The islanding process and its subsequent evolution was monitored with the help of island size distributions, sensitive to islands above 2nm in size. The studies indicate that Ge forms islands in equilibrium with a 3 monolayer (ML) thick intermediate layer. These islands may initially grow coherently strained (dislocation free) with radii usually below 10nm under the conditions. The strain in these islands reduces the adatom sticking coefficient and strongly influences the microstructural evolution. The intermediate layer may grow metastably under certain conditions to as much as 7 ML before collapsing to its equilibrium form. The influence of three types of adatom sinks--strained islands, dislocated islands and contaminant particles have been studied. The contaminant particles are the strongest sinks, followed by dislocated islands and strained islands. Stepped (vicinal) surfaces (1^circ and 5 ^circ toward {110 }) had no significant influence possibly due to the steps being weak adatom sinks. The coarsening of Ge islands does not follow the Ostwald ripening model at the early stages and is influenced by the supersaturation in the intermediate layer and the strain in the coherent islands. A novel mechanism has been observed, where the larger (dislocated) islands grow at the expense of the unstable intermediate layer while the distribution of smaller (strained) islands is constant. This is possibly due to the lower sticking coefficient at the strained islands.

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

NASA Astrophysics Data System (ADS)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Kawamura, Jonathan H.; Lin, Robert H.; Williams, Benjamin

2012-01-01

Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.

Experimental Investigation and Computer Modeling of Optical Switching in Distributed Bragg Reflector and Vertical Cavity Surface Emitting Laser Structures.

DTIC Science & Technology

1995-12-01

of a Molecular Beam Epitaxy (MBE) system prior to growing a Vertical Cavity Surface Emitting Laser ( VCSEL ). VCSEL bistability is discussed later in...addition, optical bistability 1 in the reflectivity of a DBR, as well as in the lasing power, wavelength, and beam divergence of a lasing VCSEL are...Spectral Reflectivity of AlGaAs/AlAs VCSEL Top DBR Mirror Cavity Bottom DBR Mirror Substrate Output Beam Resonance Pump Minimum Stop Band Figure 2. VCSEL

Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

NASA Astrophysics Data System (ADS)

Richter, Wolfgang

2007-06-01

In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, K. H.; Yoon, S. F.; Wicaksono, S.

2013-09-09

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductivemore » switch application.« less

An advanced molecule-surface scattering instrument for study of vibrational energy transfer in gas-solid collisions.

PubMed

Ran, Qin; Matsiev, Daniel; Wodtke, Alec M; Auerbach, Daniel J

2007-10-01

We describe an advanced and highly sensitive instrument for quantum state-resolved molecule-surface energy transfer studies under ultrahigh vacuum (UHV) conditions. The apparatus includes a beam source chamber, two differential pumping chambers, and a UHV chamber for surface preparation, surface characterization, and molecular beam scattering. Pulsed and collimated supersonic molecular beams are generated by expanding target molecule mixtures through a home-built pulsed nozzle, and excited quantum state-selected molecules were prepared via tunable, narrow-band laser overtone pumping. Detection systems have been designed to measure specific vibrational-rotational state, time-of-flight, angular and velocity distributions of molecular beams coming to and scattered off the surface. Facilities are provided to clean and characterize the surface under UHV conditions. Initial experiments on the scattering of HCl(v = 0) from Au(111) show many advantages of this new instrument for fundamental studies of the energy transfer at the gas-surface interface.

An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Chen; Zhang, Kelvin H. L.

2017-08-07

Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO 3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

Method of forming silicon structures with selectable optical characteristics

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Schowalter, Leo (Inventor)

1993-01-01

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Schowalter, Leo (Inventor)

1994-01-01

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers of phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in silicon

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; Ksendzov, A.; Iannelli, J. M.; George, T.

1991-01-01

Epitaxial CoSi2 particles in a single-crystal silicon matrix are grown by molecular-beam epitaxy using a technique that allows nanometer control over particle size in three dimensions. These composite layers exhibit resonant absorption predicted by effective-medium theory. Selection of the height and diameter of disklike particles through a choice of growth conditions allows tailoring of the depolarization factor and hence of the surface-plasmon resonance energy. Resonant absorption from 0.49 to 1.04 eV (2.5 to 1.2 micron) is demonstrated and shown to agree well with values predicted by the Garnett (1904, 1906) theory using the bulk dielectric constants for CoSi2 and Si.

Research in the Optical Sciences

DTIC Science & Technology

1994-02-01

Gain Asymmetry and the Generation of New Frequencies2 "’ When a stable coherent beam is injected into a VCSEL that is lasing just above threshold, we... optical microscope was developed and tested. High quality single-crystal layers of beryllium were grown on germanium by molecular beam epitaxy (MBE... OPTICAL ELEWENTS FOR X-UV WAVELENGTHS FALCO AND SLAUGHTEM indicate an increase in crystalline quality as T is increased. However, samples deposited at

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uedono, Akira; Malinverni, Marco; Martin, Denis

Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 10{sup 19 }cm{sup −3}, vacancy-type defects were introduced starting at above [Mg] = 1 × 10{sup 20 }cm{sup −3}. The major defect species was identified as a complex between Ga vacancy (V{sub Ga}) and multiple nitrogen vacancies (V{sub N}s). The introduction of vacancy complexes was found to correlate with a decreasemore » in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.« less

MBE growth of GaAs and InAs nanowires using colloidal Ag nanoparticles

NASA Astrophysics Data System (ADS)

Ilkiv, I. V.; Reznik, R. R.; Kotlyar, K. P.; Bouravleuv, A. D.; Cirlin, G. E.

2017-11-01

Ag colloidal nanoparticles were used as a catalyst for molecular beam epitaxy of GaAs and InAs nanowires on the Si(111) substrates. The scanning electron microscopy measurements revealed that nanowires obtained are uniform and have small size distribution.

Low-temperature, ultrahigh-vacuum tip-enhanced Raman spectroscopy combined with molecular beam epitaxy for in situ two-dimensional materials' studies

NASA Astrophysics Data System (ADS)

Sheng, Shaoxiang; Li, Wenbin; Gou, Jian; Cheng, Peng; Chen, Lan; Wu, Kehui

2018-05-01

Tip-enhanced Raman spectroscopy (TERS), which combines scanning probe microscopy with the Raman spectroscopy, is capable to access the local structure and chemical information simultaneously. However, the application of ambient TERS is limited by the unstable and poorly controllable experimental conditions. Here, we designed a high performance TERS system based on a low-temperature ultrahigh-vacuum scanning tunneling microscope (LT-UHV-STM) and combined with a molecular beam epitaxy (MBE) system. It can be used for growing two-dimensional (2D) materials and for in situ STM and TERS characterization. Using a 2D silicene sheet on the Ag(111) surface as a model system, we achieved an unprecedented 109 Raman single enhancement factor in combination with a TERS spatial resolution down to 0.5 nm. The results show that TERS combined with a MBE system can be a powerful tool to study low dimensional materials and surface science.

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Jiayi; Malis, Oana; Physics Department, Purdue University, West Lafayette, Indiana 47907

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by eithermore » Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup −5} cm{sup −1}, and the length of SFs is less than 15 nm.« less

Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Wuwei, E-mail: wfeng@cugb.edu.cn; Wang, Weihua; Zhao, Chenglong

2015-11-15

We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperaturemore » is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.« less

Strain relaxation in convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001)

NASA Astrophysics Data System (ADS)

Solov'ev, V. A.; Chernov, M. Yu; Baidakova, M. V.; Kirilenko, D. A.; Yagovkina, M. A.; Sitnikova, A. A.; Komissarova, T. A.; Kop'ev, P. S.; Ivanov, S. V.

2018-01-01

This paper presents a study of structural properties of InGaAs/InAlAs quantum well (QW) heterostructures with convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers (MBLs) grown by molecular beam epitaxy on GaAs substrates. Mechanisms of elastic strain relaxation in the convex-graded MBLs were studied by the X-ray reciprocal space mapping combined with the data of spatially-resolved selected area electron diffraction implemented in a transmission electron microscope. The strain relaxation degree was approximated for the structures with different values of an In step-back. Strong contribution of the strain relaxation via lattice tilt in addition to the formation of the misfit dislocations has been observed for the convex-graded InAlAs MBL, which results in a reduced threading dislocation density in the QW region as compared to a linear-graded MBL.

Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

2017-07-01

β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

NASA Astrophysics Data System (ADS)

Zhang, Dainan; Liao, Yulong; Jin, Lichuan; Wen, Qi-Ye; Zhong, Zhiyong; Wen, Tianlong; Xiao, John Q.

2017-12-01

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.

2018-03-01

Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.

Commercial production of QWIP wafers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

2001-06-01

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Molecular beam epitaxy of quasi-freestanding transition metal disulphide monolayers on van der Waals substrates: a growth study

NASA Astrophysics Data System (ADS)

Hall, Joshua; Pielić, Borna; Murray, Clifford; Jolie, Wouter; Wekking, Tobias; Busse, Carsten; Kralj, Marko; Michely, Thomas

2018-04-01

Based on an ultra-high vacuum compatible two-step molecular beam epitaxy synthesis with elemental sulphur, we grow clean, well-oriented, and almost defect-free monolayer islands and layers of the transition metal disulphides MoS2, TaS2 and WS2. Using scanning tunneling microscopy and low energy electron diffraction we investigate systematically how to optimise the growth process, and provide insight into the growth and annealing mechanisms. A large band gap of 2.55 eV and the ability to move flakes with the scanning tunneling microscope tip both document the weak interaction of MoS2 with its substrate consisting of graphene grown on Ir(1 1 1). As the method works for the synthesis of a variety of transition metal disulphides on different substrates, we speculate that it could be of great use for providing hitherto unattainable high quality monolayers of transition metal disulphides for fundamental spectroscopic investigations.

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, X. Q.; Takahashi, T.; Matsuhata, H.

2013-12-02

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayersmore » grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.« less

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shen, X. Q.; Takahashi, T.; Rong, X.; Chen, G.; Wang, X. Q.; Shen, B.; Matsuhata, H.; Ide, T.; Shimizu, M.

2013-12-01

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe{sub 2}/MoS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane

2016-05-09

Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe{sub 2} monolayers on MoS{sub 2} substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic “wagon wheel” pattern with only ∼2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give themore » monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe{sub 2} and thus determine the band-alignment in the MoTe{sub 2}/MoS{sub 2} interface.« less

The demise of superfluid density in overdoped La 2-xSr xCuO 4 films grown by molecular beam epitaxy

DOE PAGES

Bozovic, I.; He, X.; Wu, J.; ...

2016-09-30

Here, we synthesize La 2–xSr xCuO 4 thin films using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). The films are high-quality—singe crystal, atomically smooth, and very homogeneous. The critical temperature (T c) shows a very little (<1 K) variation within a film of 10×10 mm 2 area. The large statistics (over 2000 films) is crucial to discern intrinsic properties. We measured the absolute value of the magnetic penetration depth λ with the accuracy better than 1 % and mapped densely the entire overdoped side of the La 2–xSr xCuO 4 phase diagram. A new scaling law is established accurately for themore » dependence of T c on the superfluid density. The scaling we observe is incompatible with the standard Bardeen-Cooper-Schrieffer picture and points to local pairing.« less

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Molecular Beam Epitaxy of Layered Material Superlattices and Heterostructures

NASA Astrophysics Data System (ADS)

Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Furdyna, Jacek K.; Jena, Debdeep; Xing, Huili Grace

2014-03-01

Stacking of various layered materials is being pursued widely to realize various devices and observe novel physics. Mostly, these have been limited to exfoliation and stacking either manually or in solution, where control on rotational alignment or order of stacking is lost. We have demonstrated molecular beam epitaxy (MBE) growth of Bi2Se3/MoSe2 superlatticeand Bi2Se3/MoSe2/SnSe2 heterostructure on sapphire. We have achieved a better control on the order of stacking and number of layers as compared to the solution technique. We have characterized these structures using RHEED, Raman spectroscopy, XPS, AFM, X-ray reflectometry, cross-section (cs) and in-plane (ip) TEM. The rotational alignment is dictated by thermodynamics and is understood using ip-TEM diffraction patterns. Layered growth and long range order is evident from the streaky RHEED pattern. Abrupt change in RHEED pattern, clear demarcation of boundary between layers seen using cs-TEM and observation of Raman peaks corresponding to all the layers suggest van-der-waals epitaxy. In our knowledge this is a first demonstration of as grown superlattices and heterostuctures involving transition metal dichalcogenides and is an important step towards the goal of stacking of 2D crystals like lego blocks.

Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

SpringThorpe, A.J.; Moore, W.T.; Majeed, A.

1993-07-01

Recent proposals by Wood and Wilson, to explain the formation of impurity spikes at substrate/epitaxial layer interfaces in GaAs prepared by molecular-beam epitaxy (MBE), have been experimentally investigated. Their suggestion that the spikes form due to suboxide transport via reactions that involve the As{sub 2}O{sub 3} released from the substrate during oxide desorption and hot Knudsen cells, is not supported by the experimental data. The same authors have also speculated that there may be significant flux leakage from nominally closed cells. For this to occur, reflection and scattering of flux by inadequately cooled cryoshroud baffle surfaces are necessary. Secondary ionmore » mass spectrometry analyses of interfaces, at which the growth of GaAs and AlAs was interrupted for times up to 30 min, confirm that this takes place. However, flux leakage is only found to be significant for the high vapor pressure group III elements. For these elements, incorporation levels in the range 0.02%-0.1% are found under normal deposition conditions. These results suggest that careful attention should be given to increasing the internal MBE system baffling in order to eliminate cross contamination problems. 14 refs., 2 figs., 1 tab.« less

Heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Gladyshev, A. G.; Filimonov, A. V.; Nevedomskii, V. N.; Kurochkin, A. S.; Kolodeznyi, E. S.; Sokolovskii, G. S.; Bugrov, V. E.; Karachinsky, L. Ya.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu.

2017-07-01

It is shown that molecular-beam-epitaxy technology can be used to fabricate heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm with an active region comprising 50 cascades based on a heterojunction of In0.53Ga0.47As/Al0.48In0.52As solid solutions. The optical emission is obtained using a quantum-cascade design operating on the principle of two-phonon resonance scattering. The properties of heterostructures were studied by the methods of X-ray diffraction and transmission electron microscopy, which showed their high quality with respect to the identical compositions and thicknesses of all 50 cascades. Stripe-geometry lasers made of these heterostructures exhibited lasing with a threshold current density below 1.6 kA/cm2 at a temperature of 78 K.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

2010-04-01

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lotsari, A.; Kehagias, Th.; Katsikini, M.

2014-06-07

Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults,more » and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.« less

Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

NASA Astrophysics Data System (ADS)

Yang, W. C.; Lee, P. Y.; Tseng, H. Y.; Lin, C. W.; Tseng, Y. T.; Cheng, K. Y.

2016-04-01

The influence of growth conditions on the incorporation and activation of Mg in GaN grown by plasma-assisted molecular beam epitaxy at high growth temperature (>700 °C) is presented. It is found that the highest Mg incorporation with optimized electrical properties is highly sensitive both to the Mg/Ga flux ratio and III/V flux ratio. A maximum Mg activation of ~5% can be achieved at a growth temperature of 750 °C. The lowest resistivity achieved is 0.56 Ω-cm which is associated with a high hole mobility of 6.42 cm2/V-s and a moderately high hole concentration of 1.7×1018 cm-3. Although the highest hole concentration achieved in a sample grown under a low III/V flux ratio and a high Mg/Ga flux ratio reaches 7.5×1018 cm-3, the mobility is suffered due to the formation of defects by the excess Mg. In addition, we show that modulated beam growth methods do not enhance Mg incorporation at high growth temperature in contrast to those grown at a low temperature of 500 °C (Appl. Phys. Lett. 93, 172112, Namkoong et al., 2008 [19]).

Study of process technology for GaAlAs/GaAs heteroface solar cells

NASA Technical Reports Server (NTRS)

Conway, E. J.; Walker, G. H.; Byvik, C. E.; Almgren, D. W.

1980-01-01

Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per cell was achieved with the advanced metal organic chemical vapor deposition process. Molecular beam epitaxy was limited by the slow growth rate. The lowest cost, an 18 percent efficient cell at air mass zero, was approximately $70 per watt.

DOE Office of Scientific and Technical Information (OSTI.GOV)

He Liang; Xiu Faxian; Huang Guan

In this paper, we report the epitaxial growth of Bi{sub 2}Se{sub 3} thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of {approx}100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.

Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

DTIC Science & Technology

2000-06-23

when Nitrogen concentration is increased [91. In molecular beam epitaxy (MBE) one of the reasons of this is the surface quality degradation due to the...cavity surface emitting laser ( VCSEL ) emitting at 1.18 /tm was also reported [7 1. The main problem in the InGaAsN epitaxy is a large difference in the...vertical cavity surface emitting lasers ( VCSELs ). This stimulates attempts to fabricate high quality 1.3 /tm lasers on GaAs substrates. The best results

Sulfur Doping of InAs

DTIC Science & Technology

2015-06-04

dopant in III-V molecular beam epitaxial (MBE) growth, due to the high vapor pressure. This is a significant concern as high vapor pressure species...results were also observed with co-implantation of gallium with selenium, which sits on the group-V site [10]. Consequently, the sulfur dose was

On the origin and elimination of macroscopic defects in MBE films

NASA Astrophysics Data System (ADS)

Wood, C. E. C.; Rathbun, L.; Ohno, H.; DeSimone, D.

1981-02-01

Spitting of group III metal droplets from Knudsen type effusion cells has been found culpable for a genre of problematical macroscopic surface topographical defects observed in the growth of semiconductor films by molecular beam epitaxy. Successful precautions are described which virtually eliminate the problem.

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

NASA Astrophysics Data System (ADS)

Maddox, S. J.; Sun, W.; Lu, Z.; Nair, H. P.; Campbell, J. C.; Bank, S. R.

2012-10-01

We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ˜80, at a record low reverse bias of 12 V.

Magnetic x-ray linear dichroism of ultrathin Fe-Ni alloy films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, F.O.; Willis, R.F.; Goodman, K.W.

1997-04-01

The authors have studied the magnetic structure of ultrathin Fe-Ni alloy films as a function of Fe concentration by measuring the linear dichroism of the 3p-core levels in angle-resolved photoemission spectroscopy. The alloy films, grown by molecular-beam epitaxy on Cu(001) surfaces, were fcc and approximately four monolayers thick. The intensity of the Fe dichroism varied with Fe concentration, with larger dichroisms at lower Fe concentrations. The implication of these results to an ultrathin film analogue of the bulk Invar effect in Fe-Ni alloys will be discussed. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Lightmore » Source.« less

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

PubMed Central

Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Galkin, K. N.; Galkin, N. G.; Gutakovskii, A. K.

2015-01-01

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3–4 and 15–20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2. PMID:26434582

InN: A material with photovoltaic promise and challenges

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Burnham, Shawn; Doolittle, W. Alan; Cheung, Maurice; Cartwright, Alexander

2006-03-01

The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice mismatched material system. For this reason, the characteristics of InN grown on (1 1 1)-oriented germanium and (0 0 0 1)-plane sapphire substrates via molecular beam epitaxy for the application of InN solar cells is described. To provide an efficient sub-cell interconnect for tandem solar cells, epitaxial Al was deposited on a germanium substrate with InN grown on this epitaxial aluminum layer. Consistent with previous results, the electrical characteristics of n-InN/p-Ge, n-InN/n-Ge, and n-InN/Al/Ge were measured and showed no rectifying behavior. As evidenced by X-ray diffraction, minute amounts of unintentional oxygen incorporation during InN growth forms a secondary phase, tentatively assigned to an indium oxynitride, InON x, phase. Photoluminescence measurements of the InN/InON x show spectral peaks at ˜0.7 and ˜3.8 eV consistent with the bulk excitonic bandgap of the two materials. Photoluminescence was also found at ˜1.7 eV and shown to be related to emission from the sapphire substrates.

Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO{sub 3}){sub n} films by means of metalorganic aerosol deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungbauer, M.; Hühn, S.; Moshnyaga, V.

2014-12-22

We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO{sub 3}){sub n} (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO{sub 3}(001) substrates by means of a sequential deposition of Sr-O/Ti-O{sub 2} atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidlymore » decreases and saturates after 5–6 repetitions of the SrO(SrTiO{sub 3}){sub 4} block at the level of 2.4%. This identifies the SrTiO{sub 3} substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy.« less

Teresa Barnes, Ph.D. | NREL

Science.gov Websites

Engineering, Colorado School of Mines B.S. Chemical Engineering, University of Maryland Featured Publications studied plasma-assisted chemical vapor deposition chemistry and transparent conducting oxide growth as a exploring the fundamental limits of CdTe performance using molecular beam epitaxy. Education Ph.D. Chemical

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, A. E., E-mail: Zhukale@gmail.com; Cirlin, G. E.; Reznik, R. R.

2016-05-15

The results obtained in a study of the structural and optical properties of GaAs/AlGaAs heterostructures with 228 quantum cascades, grown by molecular-beam epitaxy, and in a simulation of interband optical transitions and transitions between the energy levels of a cascade are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ast, D.G.

Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The researchmore » program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.« less

Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication.

PubMed

Damilano, B; Vézian, S; Brault, J; Alloing, B; Massies, J

2016-03-09

Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and InxGa1-xN/GaN quantum well epitaxial structures. After GaN regrowth on InxGa1-xN/GaN NWs resulting from SAS, InxGa1-xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate QDisk multilines photon emission around 3 eV with individual line widths of 1-2 meV.

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Desrat, W.; Moret, M.; Briot, O.; Ngo, T.-H.; Piot, B. A.; Jabakhanji, B.; Gil, B.

2018-04-01

We report on the growth of GaSe films by molecular beam epitaxy on both (111)B GaAs and sapphire substrates. X-ray diffraction reveals the perfect crystallinity of GaSe with the c-axis normal to the substrate surface. The samples grown under Ga rich conditions possess an additional gallium film on top of the monochalcogenide layer. This metallic film shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K and 6.0 K. They correspond likely to the β and α-phases of gallium in the form of bulk and droplets respectively. Our results demonstrate that van der Waals epitaxy can lead to future high quality hybrid superconductor/monochalcogenide heterostructures.

Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

Computer simulation studies of the growth of strained layers by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Faux, D. A.; Gaynor, G.; Carson, C. L.; Hall, C. K.; Bernholc, J.

1990-08-01

Two new types of discrete-space Monte Carlo computer simulation are presented for the modeling of the early stages of strained-layer growth by molecular-beam epitaxy. The simulations are more economical on computer resources than continuous-space Monte Carlo or molecular dynamics. Each model is applied to the study of growth onto a substrate in two dimensions with use of Lennard-Jones interatomic potentials. Up to seven layers are deposited for a variety of lattice mismatches, temperatures, and growth rates. Both simulations give similar results. At small lattice mismatches (<~4%) the growth is in registry with the substrate, while at high mismatches (>~6%) the growth is incommensurate with the substrate. At intermediate mismatches, a transition from registered to incommensurate growth is observed which commences at the top of the crystal and propagates down to the first layer. Faster growth rates are seen to inhibit this transition. The growth mode is van der Merwe (layer-by-layer) at 2% lattice mismatch, but at larger mismatches Volmer-Weber (island) growth is preferred. The Monte Carlo simulations are assessed in the light of these results and the ease at which they can be extended to three dimensions and to more sophisticated potentials is discussed.

Epitaxy of semiconductor-superconductor nanowires

NASA Astrophysics Data System (ADS)

Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

2015-04-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy

NASA Astrophysics Data System (ADS)

Ortega-Gallegos, J.; Guevara-Macías, L. E.; Ariza-Flores, A. D.; Castro-García, R.; Lastras-Martínez, L. F.; Balderas-Navarro, R. E.; López-Estopier, R. E.; Lastras-Martínez, A.

2018-05-01

We report on the first spectroscopic study of reflectance-anisotropy (RA) oscillations during molecular beam epitaxy (MBE) GaAs homoepitaxy. Real-time RA spectra measured during epitaxial growth were carried out with a recently developed rapid RA multichannel spectrometer with 100 ms per spectrum acquisition time. An analysis of the time-resolved RA spectra shows that RA oscillations are mostly due to the periodic modulation of the surface orthorhombic strain associated to surface reconstruction. Results reported here demonstrate the power of real-time RA spectroscopy as a probe for the study of epitaxial growth processes. In particular, given its sub monolayer surface-strain sensitivity, RA spectroscopy results a very convenient tool to study epitaxial growth mechanisms in real-time with sub monolayer resolution. This capability allows for real-time RA spectroscopy to be used as a probe for the in situ, real-time control of epitaxial growth, with the additional advantage of operating in higher pressure systems such as CVD, where RHEED monitoring cannot be implemented.

Epitaxial growth of MgO/Ga2O3 heterostructure and its band alignment studied by X-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Matsuo, Norihiro; Doko, Naoki; Yasukawa, Yukiko; Saito, Hidekazu; Yuasa, Shinji

2018-07-01

We have grown an epitaxial MgO/Ga2O3 heterostructure on a MgO(001) substrate by molecular beam epitaxy. Crystallographic studies revealed the out-of-plane and in-plane crystal orientations between the MgO overlayer and the Ga2O3 layer, which were MgO(001) ∥ β-Ga2O3(001) and MgO[100] ∥ β-Ga2O3 [02\\bar{1}], respectively. The valence band offset at the MgO/β-Ga2O3 interface was determined to be 0.19 eV (type-II band alignment) by X-ray photoelectron spectroscopy, resulting in a large conduction band offset of 2.7–3.2 eV. These results indicate that MgO is a promising potential barrier for electrons in an epitaxial MgO/Ga2O3 multilayered structure.

Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles

NASA Astrophysics Data System (ADS)

Lang, O.; Klein, A.; Pettenkofer, C.; Jaegermann, W.; Chevy, A.

1996-10-01

Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low-energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x-ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule).

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Aloni, Shaul; Weiss, Robert

Si-based photovoltaic devices dominate the market. As photovoltaic (PV) manufacturing costs have plummeted, technologies which increase efficiency have become critical. Si cell efficiencies are nearing theoretical limits and Si-based PV modules are unlikely to reach the 25-30% efficiency range. The use of III-V semiconductors is an obvious technical solution to improve efficiency, especially if they can be integrated directly with existing Si technology as tandems. High coefficients of light absorption along with tunable bandgaps and lattice constants have resulted in record conversion efficiencies for both one-sun and concentrator PV applications. GaAs, for example, has been used to manufacture single-junction photovoltaicsmore » with world-record efficiencies of 28.8% at one sun.2 However, costs for III-Vs must be dramatically reduced to produce cost-effective, high-efficiency PV solutions. III-V costs are controlled by two factors: semiconductor growth and the substrate. III-V growth is dominated today by metal-organic vapor phase epitaxy (MOVPE) with a lesser role played by molecular beam epitaxy (MBE). MOVPE costs are high due to the expense and low utilization (~30%) of precursors, modest growth rates (~100 nm min-1), equipment complexity, and safety infrastructure needed to handle toxic, pyrophoric gases.3 MBE costs are high due to slow growth rates and limitations of scalability. Details comparing plausible low-cost III-V growth methods are available in a review article published as a result of this project. The primary goal of this project was to demonstrate that close-spaced vapor transport (CSVT) using chloride (from HCl) as a transport agent can be used for the rapid growth of device-ready III-V layers from safe, solid-source precursors. In pursuit of this goal, we designed, built, and installed a new Cl-CSVT reactor based on insights from our previous H2O-CSVT growth system and in collaboration with equipment professionals at Malachite Technologies. This system was successfully used to grow epitaxial GaAs with controlled n-type doping, having mobilities similar to MOVPE. Detailed technical information and results can also be found in the primary publication resulting from this project. This work sets the stage for tackling the development of high-performance III-V single junctions and tandem devices directly on Si substrates, which was beyond the capabilities of our H2O-CSVT system. The design of the reactor’s source and substrate transfer system should allow for direct deposition of device structures. The collective innovations of our Cl-CSVT system might ultimately serve as an enabling process for commercialization of the technology through a collaboration with appropriate industrial partners.« less

Strain-Balanced InAs/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy on GaSb Substrates

DTIC Science & Technology

2011-12-21

C. Four samples A, B, C, and D with 20 period SLs were grown under identical condi- tions with varying Sb/(Asþ Sb) beam equivalent pressure ( BEP ) flux...incorporation can be achieved. Thus, the InAs1xSbx layers in samples A, B, C, and D have Sb/(AsþSb) BEP ratios of 0.32, 0.347, 0.378, and 0.412

Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

2018-04-01

It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.

Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects,more » like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.« less

Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

NASA Astrophysics Data System (ADS)

Mula, Guido; Adelmann, C.; Moehl, S.; Oullier, J.; Daudin, B.

2001-11-01

We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN surface for appropriate Ga fluxes and substrate temperatures. The influence of the presence of this Ga film on the growth mode of GaN on AlN(0001) by plasma-assisted molecular-beam epitaxy is studied. It is demonstrated that under nearly stoichiometric and N-rich conditions, the GaN layer relaxes elastically during the first stages of epitaxy. At high temperatures the growth follows a Stranski-Krastanov mode, whereas at lower temperatures kinetically formed flat platelets are observed. Under Ga-rich conditions-where a Ga bilayer is rapidly formed due to excess Ga accumulating on the surface-the growth follows a Frank-van der Merwe layer-by-layer mode at any growth temperature and no initial elastic relaxation occurs. Hence, it is concluded that excess Ga acts as a surfactant, effectively suppressing both Stranski-Krastanov islanding and platelet formation. It is further demonstrated that the Stranski-Krastanov transition is in competition with elastic relaxation by platelets, and it is only observed when relaxation by platelets is inefficient. As a result, a growth mode phase diagram is outlined for the growth of GaN on AlN(0001).

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

NASA Astrophysics Data System (ADS)

Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

2017-04-01

We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

NASA Technical Reports Server (NTRS)

Goldman, Rachel S.

2004-01-01

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Springholz, G.; Wimmer, S.; Groiss, H.; Albu, M.; Hofer, F.; Caha, O.; Kriegner, D.; Stangl, J.; Bauer, G.; Holý, V.

2018-05-01

The structure and morphology of BimSen epitaxial layers with compositions ranging from Bi2Se3 to the Bi1Se1 grown by molecular beam epitaxy with different flux compositions are investigated by transmission electron microscopy, high-resolution x-ray diffraction, and atomic force microscopy. It is shown that the lattice structure changes significantly as a function of the beam flux composition, i.e., Se/BiSe flux ratio that determines the stoichiometry of the layers. A perfect Bi2Se3 phase is formed only with a sufficiently high additional Se flux, whereas Bi1Se1 is obtained when only a BiSe compound source without additional Se is used. For intermediate values of the excess Se flux during growth, Bi2Se3 -δ layers are obtained with the Se deficit δ varying between 0 and 1. This Se deficit is accommodated by incorporation of additional Bi-Bi double layers into the Bi2Se3 structure that otherwise exclusively consists of Se-Bi-Se-Bi-Se quintuple layers. While a periodic insertion of such Bi double layers would result in the formation of natural BimSen superlattices, we find that this Bi double-layer insertion is rather stochastic with a high degree of disorder depending on the film composition. Therefore, the structure of such epilayers is better described by a one-dimensional paracrystal model, consisting of disordered sequences of quintuple and double layers rather than by strictly periodic natural superlattices. From detailed analysis of the x-ray diffraction data, we determine the dependence of the lattice parameters a and c and distances of the individual (0001) planes dj as a function of composition, evidencing that only the in-plane lattice parameter a shows a linear dependence on composition. The simulation of the diffraction curves with the random stacking paracrystal model yields an excellent agreement with the experimental data and it brings quantitative information on the randomness of the stacking sequence, which is compared to growth modeling using Monte Carlo simulations. The analysis of transmission electron microscopy data furthermore confirms that the Bi-Bi bilayers contain a large amount of vacancies of up to 25%. Conductivity and Hall data confirm that BimSen phases containing Bi-Bi double layers exhibit a rather semimetallic behavior.

Engineering the oxygen coordination in digital superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong

The oxygen sublattice in the complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, demonstrating a new strategy for achieving unique electronic properties in the transition metal oxides.

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

NASA Astrophysics Data System (ADS)

Roodenko, K.; Choi, K. K.; Clark, K. P.; Fraser, E. D.; Vargason, K. W.; Kuo, J.-M.; Kao, Y.-C.; Pinsukanjana, P. R.

2016-09-01

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

Current-direction dependence of the transport properties in single-crystalline face-centered-cubic cobalt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, X.; Liang, J. H.; Chen, B. L.

2015-07-28

Face-centered-cubic cobalt films are epitaxially grown on insulating LaAlO{sub 3}(001) substrates by molecular beam epitaxy. Transport measurements are conducted in different current directions relative to the crystal axes. We find that the temperature dependent anisotropic magnetoresistance ratio strongly depends on the current direction. However, the anomalous Hall effect shows isotropic behavior independent of the current direction. Our results demonstrate the interplay between the current direction and the crystalline lattice in single-crystalline ferromagnetic films. A phenomenological analysis is presented to interpret the experimental data.

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

NASA Astrophysics Data System (ADS)

Wu, C. Z.; Tsou, Y.; Tsai, C. M.

1999-05-01

Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecular beam epitaxy (MBE) without resorting to any real-time monitoring technique is reported. Continuous grading of Al xGa 1- xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temperatures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demonstrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5% and 1.4% for VCSEL etalon wavelength.

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tangi, Malleswararao; De, Arpan; Ghatak, Jay

2016-05-28

A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-Vmore » measurements that yield mobility values as high as ≈4453 cm{sup 2}/V s and the carrier concentration of ≈1.1 × 10{sup 17} cm{sup −3}, which are unprecedented in the literature for comparable InN NR diameters.« less

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

2017-11-01

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

Electronics Devices and Materials

DTIC Science & Technology

2008-03-17

Molecular -bea epitaxy MCNPX ............... Software code Misse6 ................. Satellite expected to carry ORMatE-I Misse7...patterning using electron beam lithography), spaces (class 1000 clean benches), and skills (appropriate mix of skilled technicians and professionals...34 Process samples for various projects such as Antimode Base High Electron Mobility Transistors ( HEMT ) and Double Heterojuction Bipolar Transistors

Arsenic complexes optical signatures in As-doped HgCdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gemain, F.; Robin, I. C.; Brochen, S.

2013-04-08

In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

NASA Astrophysics Data System (ADS)

Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

2018-01-01

Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

Topological insulator film growth by molecular beam epitaxy: A review

DOE PAGES

Ginley, Theresa P.; Wang, Yong; Law, Stephanie

2016-11-23

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2-VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have amore » high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.« less

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Fellmann, Vincent; Jaffrennou, Périne; Sam-Giao, Diane; Gayral, Bruno; Lorenz, Katharina; Alves, Eduardo; Daudin, Bruno

2011-03-01

We have studied the influence of III/N flux ratio and growth temperature on structural and optical properties of high Al-content, around 50-60%, AlGaN alloy layers grown by plasma-assisted molecular beam epitaxy. In a first part, based on structural analysis by Rutherford Backscattering Spectroscopy, we establish that a III/N flux ratio slightly above 1 produces layers with low amount of structural defects. In a second part, we study the effect of growth temperature on structural and optical properties of layers grown with previously determined optimal III/N flux ratio. We find that optimal growth temperatures for Al0.50Ga0.50N layers with compositional homogeneity related with narrow UV photoluminescence properties are in the low temperature range for growing GaN layers, i.e., 650-680 °C. We propose that lowering Ga adatom diffusion on the surface favors random incorporation of both Ga and Al adatoms on wurtzite crystallographic sites leading to the formation of an homogeneous alloy.

Thermal stability and relaxation mechanisms in compressively strained Ge{sub 0.94}Sn{sub 0.06} thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fleischmann, C.; Lieten, R. R.; Shimura, Y.

Strained Ge{sub 1-x}Sn{sub x} thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with high crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated the evolution (and the interplay) of composition, strain, and morphology of strained Ge{sub 0.94}Sn{sub 0.06} films with temperature. We observed a diffusion-driven formation of Sn-enriched islands (and their self-organization) as well as surface depressions (pits), resulting in phase separation and (local) reduction in strain energy,more » respectively. Remarkably, these compositional and morphological instabilities were found to be the dominating mechanisms to relieve energy, implying that the relaxation via misfit generation and propagation is not intrinsic to compressively strained Ge{sub 0.94}Sn{sub 0.06} films grown by molecular beam epitaxy.« less

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

2016-08-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

NASA Astrophysics Data System (ADS)

Mynbaev, K. D.; Bazhenov, N. L.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Marin, D. V.; Yakushev, M. V.

2018-05-01

Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature photoluminescence (PL) measurements. A substantial difference in defect structure between films grown on GaAs (013) and Si (013) substrates was revealed. HgCdTe/GaAs films were mostly free of defect-related energy levels within the bandgap, which was confirmed by PL and carrier lifetime measurements. By contrast, the properties of HgCdTe/Si films are affected by uncontrolled point defects. These could not be always associated with typical "intrinsic" HgCdTe defects, such as mercury vacancies, so consideration of other defects, possibly inherent in HgCdTe/Si structures, was required. The post-growth annealing was found to have a positive effect on the defect structure by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgCdTe/Si.

Thin film growth of CaFe2As2 by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

2016-01-01

Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Molecular beam epitaxy of InN nanowires on Si

NASA Astrophysics Data System (ADS)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

NASA Astrophysics Data System (ADS)

Bandić, Z. Z.; Hauenstein, R. J.; O'Steen, M. L.; McGill, T. C.

1996-03-01

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma-assisted MBE (ECR-MBE) growth of a set of δ-GaNyAs1-y/GaAs strained-layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540-580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface-desorption and surface-segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1-y layers at typical GaN ECR-MBE growth temperatures, with an estimated activation energy Es˜0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes.

Structural control of In2Se3 polycrystalline thin films by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Okamoto, T.; Nakada, Y.; Aoki, T.; Takaba, Y.; Yamada, A.; Konagai, M.

2006-09-01

Structural control of In2Se3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In2Se3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400 °C. VI/III ratio greatly affected crystal structure of In2Se3 polycrystalline films. Mixtures of -In2Se3 and γ-In2Se3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In2Se3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In2Se3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In2Se3. Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm2) were approximately 10-9 and 10-5 S/cm in the γ-In2Se3 polycrystalline thin films, respectively.

Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

2009-10-01

The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tang, Shujie; Zhang, Chaofan; Jia, Chunjing; Ryu, Hyejin; Hwang, Choongyu; Hashimoto, Makoto; Lu, Donghui; Liu, Zhi; Devereaux, Thomas P.; Shen, Zhi-Xun; Mo, Sung-Kwan

2018-02-01

Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe2 on bilayer graphene a semimetal.

Electronic structure of monolayer 1T'-MoTe 2 grown by molecular beam epitaxy

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Jia, Chunjing; ...

2017-11-14

Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe 2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe 2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemissionmore » spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe 2 on bilayer graphene a semimetal.« less

Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.

2008-08-01

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

PubMed Central

2017-01-01

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe2 on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates, allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe2. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film. PMID:28530829

High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

McSkimming, Brian M., E-mail: mcskimming@engineering.ucsb.edu; Speck, James S.; Chaix, Catherine

2015-09-15

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions,more » the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.« less

Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

NASA Astrophysics Data System (ADS)

Asai, K.; Feng, J. M.; Vaccaro, P. O.; Fujita, K.; Ohachi, T.

2000-06-01

The As vapor pressure dependence of the Ga desorption rate during molecular beam epitaxy (MBE) growth on GaAs( n11)A ( n=1-4 hereafter) substrates was studied by photoluminescence (PL) measurements at 12 K for undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs). Reflection high energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface were also used. Two K-cells of As solid sources (corresponding to beam equivalent pressures (BEPs) of 9.0×10 -6 and 4.5×10 -5 Torr) were used to change the As pressure rapidly. The Ga flux and substrate temperature were kept constant at 0.76 ML/s and 12 K, respectively, while the As flux changed from 7.6 (BEP 9.0×10 -6 Torr) to 32 ML/s (4.5×10 -5 Torr). With increasing As pressure, two separated PL peaks for the wide well (WW) of high index substrates were observed. This peak separation is attributed to a reduced well depth from an increasing Ga desorption rate. The energy differences of the PL peak depending on the off-angle from (111)A to (100) plane indicates an orientation-dependent Ga desorption rate. Moreover, amongst all ( n11)A and (100) planes, the Ga desorption rate was smallest from the (111)A surface. The increase of Ga desorption from the surface at high As pressures probably arose from an increasing coverage with a quasi-liquid layer (QLL).

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.

2015-01-07

By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate thatmore » the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.« less

Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dimitrakopulos, G. P.

2012-07-02

The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Liu, Yang; Ruf, Jacob P.; Schreiber, Nathaniel J.; Shang, Shun-Li; Baek, David J.; Goodge, Berit H.; Kourkoutis, Lena F.; Liu, Zi-Kui; Shen, Kyle M.; Schlom, Darrell G.

2018-04-01

Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

NASA Astrophysics Data System (ADS)

Niu, Wei; Wang, Xuefeng; Gao, Ming; Xia, Zhengcai; Du, Jun; Nie, Yuefeng; Song, Fengqi; Xu, Yongbing; Zhang, Rong

2017-05-01

We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

NASA Astrophysics Data System (ADS)

Van Hove, J. M.; Carpenter, G.; Nelson, E.; Wowchak, A.; Chow, P. P.

1996-07-01

Homo- and heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films deposited on sapphire using this growth technique exhibited an extremely sharp X-ray diffraction with a full width half maximum of 112 arc sec. p-type doping of the nitride films was done with elemental Mg and resulted in as-grown p-type material with resistivities as low as 2 Ω · cm. Both homo- and heterojunction LEDs showed clear rectification. Emission from the GaN homojunction deposited on n-type SiC was peaked at 410 nm while the AlGaNGaN(Zn)AlGaN double heterojunction LEDs emission was centered about 520 nm.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

NASA Astrophysics Data System (ADS)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Highly temperature insensitive quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Y.; Bandyopadhyay, N.; Tsao, S.

2010-12-20

An InP based quantum cascade laser (QCL) heterostructure emitting around 5 {mu}m is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T{sub 0} and T{sub 1}, for operations above room temperature. A T{sub 0} value of 383 K and a T{sub 1} value of 645 K are obtained within a temperature range of 298-373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mmmore » and a ridge width of 8 {mu}m.« less

International Conference on Superlattices, Microstructures and Microdevices (3rd) Held in Chicago, Illinois on August 17-20, 1987.

DTIC Science & Technology

1987-08-20

contributed) A. Scherer, P. S. 0. Lin, P. Grobbe, Tp6 electron Impact Ionization from GaAs J. Harbison, L. Schiavone , Bell imntibued) quantum well...molecular beam epitaxy. 20 :’% .•% , *U.%.*. Mp 4 eVV % % Semiconductor Microcrystallites in Porous Glass and Their Applications in Optics .1%• John C. Luong...A. Scherer, P.S.D. Lin, P. Grabbe, J. Harbison, L. Schiavone .v/- Bell Communications Research Red Bank, NJ 07701 Recent advances in electron beam

Joint Services Electronics Program: Electronics Research at the University of Texas at Austin

DTIC Science & Technology

1990-12-31

large area 2-dimensional phased arrays , and improved beam qualities . This device structure is expected to impact laser technology over a wide range...energy. In the following pages we report on two significant accomplishments. The first involves the influence oi mirror-quantum well optical coupling on... intensity enhancements in the normal direction to the mirror of a 24 (Research Unit SSE89-1, "Growth of Ill-V Compounds by Molecular Beam Epitaxy") factor of

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.