40 CFR 721.10230 - Rutile, tin zinc, calcium doped.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Rutile, tin zinc, calcium doped. 721... Substances § 721.10230 Rutile, tin zinc, calcium doped. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as rutile, tin zinc, calcium-doped (PMN P-06...

77 FR 42990 - Significant New Use Rules on Certain Chemical Substances

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-23

... Toxic Substances Control Act (TSCA) for the chemical substances rutile, tin zinc, calcium-doped (CAS No. 389623-01-2) and rutile, tin zinc, sodium-doped (CAS No. 389623-07-8) which were the subject of..., tin zinc, calcium-doped (PMN P-06-36; CAS No. 389623-01-2) and rutile, tin zinc, sodium-doped (PMN P...

76 FR 75794 - Significant New Use Rules on Certain Chemical Substances; Withdrawal of Two Chemical Substances

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-05

...) for chemical substances which were the subject of premanufacture notices (PMNs), i.e., rutile, tin zinc, calcium-doped (PMN P-06-36; CAS No. 389623-01-2) and rutile, tin zinc, sodium-doped (PMN P-06-37... rutile, tin zinc, calcium-doped (PMN P-06-36; CAS No. 389623-01-2) and rutile, tin zinc, sodium-doped...

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Cadmium plating replacements

NASA Technical Reports Server (NTRS)

Nelson, Mary J.; Groshart, Earl C.

1995-01-01

The Boeing Company has been searching for replacements to cadmium plate. Two alloy plating systems seem close to meeting the needs of a cadmium replacement. The two alloys, zinc-nickel and tin-zinc are from alloy plating baths; both baths are neutral pH. The alloys meet the requirements for salt fog corrosion resistance, and both alloys excel as a paint base. Currently, tests are being performed on standard fasteners to compare zinc-nickel and tin-zinc on threaded hardware where cadmium is heavily used. The Hydrogen embrittlement propensity of the zinc-nickel bath has been tested, and just beginning for the tin-zinc bath. Another area of interest is the electrical properties on aluminum for tin-zinc and will be discussed. The zinc-nickel alloy plating bath is in production in Boeing Commercial Airplane Group for non-critical low strength steels. The outlook is promising that these two coatings will help The Boeing Company significantly reduce its dependence on cadmium plating.

Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.

PubMed

Ahn, Byung Du; Jeon, Hye Ji; Park, Jin-Seong

2014-06-25

This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH3COO)2·2H2O and/or SnCl2·2H2O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm(-1) for GaZTO:N films indicated the presence of ZnGa2O4, N-H, and N═O groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm(2) V(-1) s(-1) in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (Vth) of 0.04 V. In addition, the instability of Vth values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band.

76 FR 81441 - Proposed Significant New Use Rules on Certain Chemical Substances

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-28

... 5(a)(2) of the Toxic Substances Control Act (TSCA) for the chemical substances rutile, tin zinc, calcium-doped (CAS No. 389623-01- 2) and rutile, tin zinc, sodium-doped (CAS No. 389623-07-8) which were... two chemical substances are identified as rutile, tin zinc, calcium-doped (PMN P-06-36; CAS No. 389623...

Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

DOEpatents

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

METHOD OF APPLYING COPPER COATINGS TO URANIUM

DOEpatents

Gray, A.G.

1959-07-14

A method is presented for protecting metallic uranium, which comprises anodic etching of the uranium in an aqueous phosphoric acid solution containing chloride ions, cleaning the etched uranium in aqueous nitric acid solution, promptly electro-plating the cleaned uranium in a copper electro-plating bath, and then electro-plating thereupon lead, tin, zinc, cadmium, chromium or nickel from an aqueous electro-plating bath.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F.

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitivemore » substrates.« less

Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

NASA Astrophysics Data System (ADS)

Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

2017-05-01

A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Bae, Byung Seong; Jung, Myunghee; Yun, Eui-Jung

2016-06-01

We investigate the effects of high temperatures in the range of 292 - 393 K on the electrical properties of solution-processed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operated in the saturation region. The fabricated a-ZTO TFTs have a non-patterned bottom gate and top contact structure, and they use a heavily-doped Si wafer and SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO TFTs, the trap release energy ( E TR ) was deduced by using Maxwell-Boltzmann statistics. The decreasing E TR toward zero with increasing gate voltage (the density of trap states ( n s )) in the a-ZTO active layer can be attributed to a shift of the Fermi level toward the mobility edge with increasing gate voltage. The TFTs with low gate voltage (low n s ) exhibit multiple trap and release characteristics and show thermally-activated behavior. In TFTs with a high gate voltage (high n s ), however, we observe decreasing mobility and conductivity with increasing temperature at temperatures ranging from 303 to 363 K. This confirms that the E TR can drop to zero, indicating a shift of the Fermi level beyond the mobility edge. Hence, the mobility edge is detected at the cusp between thermally-activated transport and band transport.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

PubMed Central

2014-01-01

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

40 CFR 437.44 - Effluent limitations attainable by the application of the best available technology economically...

Code of Federal Regulations, 2011 CFR

2011-07-01

... Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2... Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2) The in-plant limitations that apply to metal... parameters Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium...

21 CFR 73.1646 - Bronze powder.

Code of Federal Regulations, 2012 CFR

2012-04-01

... electrolytic copper and zinc with small amounts of the virgin metals aluminum and tin. It contains small... part per million Aluminum (as Al), not more than 0.5 percent. Tin (as Sn), not more than 0.5 percent... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be...

40 CFR 437.44 - Effluent limitations attainable by the application of the best available technology economically...

Code of Federal Regulations, 2010 CFR

2010-07-01

... Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2... Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2) The in-plant limitations that apply to metal... parameters Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium...

21 CFR 73.1646 - Bronze powder.

Code of Federal Regulations, 2011 CFR

2011-04-01

... electrolytic copper and zinc with small amounts of the virgin metals aluminum and tin. It contains small... part per million Aluminum (as Al), not more than 0.5 percent. Tin (as Sn), not more than 0.5 percent... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be...

40 CFR 437.44 - Effluent limitations attainable by the application of the best available technology economically...

Code of Federal Regulations, 2013 CFR

2013-07-01

... Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2... Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2) The in-plant limitations that apply to metal... parameters Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium...

40 CFR 437.44 - Effluent limitations attainable by the application of the best available technology economically...

Code of Federal Regulations, 2012 CFR

2012-07-01

... Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2... Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2) The in-plant limitations that apply to metal... parameters Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium...

21 CFR 73.1646 - Bronze powder.

Code of Federal Regulations, 2014 CFR

2014-04-01

... electrolytic copper and zinc with small amounts of the virgin metals aluminum and tin. It contains small... part per million Aluminum (as Al), not more than 0.5 percent. Tin (as Sn), not more than 0.5 percent... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be...

21 CFR 73.1646 - Bronze powder.

Code of Federal Regulations, 2013 CFR

2013-04-01

... electrolytic copper and zinc with small amounts of the virgin metals aluminum and tin. It contains small... part per million Aluminum (as Al), not more than 0.5 percent. Tin (as Sn), not more than 0.5 percent... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be...

40 CFR 437.44 - Effluent limitations attainable by the application of the best available technology economically...

Code of Federal Regulations, 2014 CFR

2014-07-01

... Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2... Lead Mercury Nickel Silver Tin Titanium Vanadium Zinc (2) The in-plant limitations that apply to metal... parameters Antimony Arsenic Cadmium Chromium Cobalt Copper Lead Mercury Nickel Silver Tin Titanium Vanadium...

21 CFR 73.1646 - Bronze powder.

Code of Federal Regulations, 2010 CFR

2010-04-01

... electrolytic copper and zinc with small amounts of the virgin metals aluminum and tin. It contains small... part per million Aluminum (as Al), not more than 0.5 percent. Tin (as Sn), not more than 0.5 percent... percent. Maximum particle size 45µ (95 percent minimum). Aluminum, zinc, tin, and copper content shall be...

Combined flame and solution synthesis of nanoscale tungsten-oxide and zinc/tin-oxide heterostructures

NASA Astrophysics Data System (ADS)

Dong, Zhizhong; Huo, Di; Kear, Bernard H.; Tse, Stephen D.

2015-12-01

Heterostructures of tungsten-oxide nanowires decorated with zinc/tin-oxide nanostructures are synthesized via a combined flame and solution synthesis approach. Vertically well-aligned tungsten-oxide nanowires are grown on a tungsten substrate by a flame synthesis method. Here, tetragonal WO2.9 nanowires (diameters of 20-50 nm, lengths >10 μm, and coverage density of 109-1010 cm-2) are produced by the vapor-solid mechanism at 1720 K. Various kinds of Zn/Sn-oxide nanostructures are grown or deposited on the WO2.9 nanowires by adjusting the Sn2+ : Zn2+ molar ratio in an aqueous ethylenediamine solution at 65 °C. With WO2.9 nanowires serving as the base structures, sequential growth or deposition on them of hexagonal ZnO nanoplates, Zn2SnO4 nanocubes, and SnO2 nanoparticles are attained for Sn2+ : Zn2+ ratios of 0 : 1, 1 : 10, and 10 : 1, respectively, along with different saturation conditions. High-resolution transmission electron microscopy of the interfaces at the nanoheterojunctions shows abrupt interfaces for ZnO/WO2.9 and Zn2SnO4/WO2.9, despite lattice mismatches of >20%.

Relative toxicity of lead and five proposed substitute shot types to pen-reared mallards

USGS Publications Warehouse

Grandy, John W.; Locke, Louis N.; Bagley, George E.

1968-01-01

A 30-day toxicity test was made to determine the relative toxicity of lead, a tin-lead alloy, zinc, nickel, teflon-coated steel, and tin, all in shot form, to pen-reared mallard drakes. All of the 15 ducks dosed with lead died. Twenty-seven percent of 15 dosed with alloy, and 20 percent of 15 dosed with zinc also died. Ten of the remaining zinc-dosed ducks showed signs of distress, including losses of muscular control and body weight. There were no deaths among 15 ducks dosed with nickel, 15 dosed with teflon-coated steel, and 15 dosed with tin. Seventy-three percent of those dosed with nickel shot eliminated all shot before the end of the 30-day period. Acid-fast intranuclear inclusion bodies were present in the kidneys of mallards dosed with commercial lead shot, or with tin-lead alloy shot, but not in the kidneys of birds given nickel, tin, or teflon-coated steel shot. Atypical, pale, acid-fast bodies were found in kidneys of 1 of 15 birds dosed with zinc. An iron-containing pigment, which stained positive with the Prussian blue technique, was present in variable amounts in almost all livers. Zinc-dosed ducks that died or were killed while still showing signs of zinc intoxication had higher iron levels in the liver than ducks that had recovered from zinc intoxication.

The development of latent fingerprints by zinc oxide and tin oxide nanoparticles prepared by precipitation technique

NASA Astrophysics Data System (ADS)

Luthra, Deepali; Kumar, Sacheen

2018-05-01

Fingerprints are the very important evidence at the crime scene which must be developed clearly with shortest duration of time to solve the case. Metal oxide nanoparticles could be the mean to develop the latent fingerprints. Zinc oxide and Tin Oxide Nanoparticles were prepared by using chemical precipitation technique which were dried and characterized by X-ray diffraction, UV-Visible spectroscopy and FTIR. The size of zinc oxide crystallite was found to be 14.75 nm with minimum reflectance at 360 nm whereas tin oxide have the size of 90 nm and reflectance at minimum level 321 nm. By using these powdered samples on glass, plastic and glossy cardboard, latent fingerprints were developed. Zinc oxide was found to be better candidate than tin oxide for the fingerprint development on all the three types of substrates.

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

NASA Astrophysics Data System (ADS)

Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

2012-07-01

Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

Development of a soft-soldering system for aluminum

NASA Astrophysics Data System (ADS)

Falke, W. L.; Lee, A. Y.; Neumeier, L. A.

1983-03-01

The method employs application of a thin nickel copper alloy coating to the substrate, which enables the tin lead solders to wet readily and spread over the areas to be joined. The aluminum substrate is mechanically or chemically cleaned to facilitate bonding to a minute layer of zinc that is subsequently applied, with an electroless zincate solution. The nickel copper alloy (30 to 70 pct Ni) coating is then applied electrolytically over the zinc, using immersion cell or brush coating techniques. Development of acetate electrolytes has permitted deposition of the proper alloys coatings. The coated areas can then be readily joined with conventional tin lead solders and fluxs. The joints so formed are ductile, strong, and relatively corrosion resistant, and exhibit strengths equivalent to those formed on copper and brass when the same solders and fluxes are used. The method has also been employed to soft solder magnesium alloys.

Co-precipitation synthesis of nano-composites consists of zinc and tin oxides coatings on glass with enhanced photocatalytic activity on degradation of Reactive Blue 160 KE2B.

PubMed

Habibi, Mohammad Hossein; Mardani, Maryam

2015-02-25

Nano-composite containing zinc oxide-tin oxide was obtained by a facile co-precipitation route using tin chloride tetrahydrate and zinc chloride as precursors and coated on glass by Doctor Blade deposition. The crystalline structure and morphology of composites were evaluated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The XRD results showed peaks relative to zinc oxide with hexagonal wurtzite structure and tin oxide with tetragonal structure. FESEM observations showed that the nano-composite consisted of aggregates of particles with an average particle size of 18 nm. The photocatalytic activity of the pure SnO2, pure ZnO, ZnSnO3-Zn2SnO4 and ZnO-SnO2 nano-structure thin films was examined using the degradation of a textile dye Reactive Blue 160 (KE2B). ZnO-SnO2 nano-composite showed enhanced photo-catalytic activity than the pure zinc oxide and tin oxide. The enhanced photo-catalytic activity of the nano-composite was ascribed to an improved charge separation of the photo-generated electron-hole pairs. Copyright © 2014 Elsevier B.V. All rights reserved.

Epigenetic lead, zinc, silver, antimony, tin, and gold veins in Boulder Basin, Blaine and Custer counties, Idaho; potential for economic tin mineralization

USGS Publications Warehouse

Ratchford, Michael E.

2002-01-01

Boulder Basin is in a northwest-trending belt of allochthonous Paleozoic rocks in the Boulder Mountains of central Idaho. Regional Tertiary extension resulted in widespread normal faulting and coeval emplacement of shallow-level intrusions and extrusive rocks of the Challis Volcanic Group. Epigenetic lead-zinc-silver-antimony-tin-gold vein deposits formed during Tertiary extension and are hosted within Paleozoic strata. The major orebodies are in the lower plate of the Boulder Basin thrust fault, in massive quartzite of the Middle Pennsylvanian to Lower Permian Wood River Formation. Anomalous concentrations of tin are present in the base-metal mineral assemblage of the Boulder Basin ore deposits. The tin-bearing veins in Boulder Basin are strikingly similar to Bolivian tin deposits. The deposit model for Bolivian tin deposits identifies buried tin porphyry below the tin-bearing vein system.

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.

PubMed

Lim, Kiwon; Choi, Pyungho; Kim, Sangsub; Kim, Hyunki; Kim, Minsoo; Lee, Jeonghyun; Hyeon, Younghwan; Koo, Kwangjun; Choi, Byoungdeog

2018-09-01

Double stacked indium-zinc oxide (IZO)/zinc-tin oxide (ZTO) active layers were employed in amorphous-oxide-semiconductor thin-film transistors (AOS TFTs). Channel layers of the TFTs were optimized by varying the molarity of ZTO back channel layers (0.05, 0.1, 0.2, 0.3 M) and the electrical properties of IZO/ZTO double stacked TFTs were compared to single IZO and ZTO TFTs with varying the molarity and molar ratio. On the basis of the results, IZO/ZTO (0.1 M) TFTs showed the excellent electrical properties of saturation mobility (13.6 cm2/V·s), on-off ratio (7×106), and subthreshold swing (0.223 V/decade) compared to ZTO (0.1 M) of 0.73 cm2/V · s, 1 × 107, 0.416 V/decade and IZO (0.04 M) of 0.10 cm2/V · s, 5 × 106, 0.60 V/decade, respectively. This may be attributed to diffusing Sn into front layer during annealing process. In addition, with varying molarity of ZTO back channel layer, from 0.1 M to 0.3 M ZTO back channel TFTs, electrical properties and positive bias stability deteriorated with increasing molarity of back channel layer because of increasing total trap states. On the other hand, 0.05 M ZTO back channel TFT had inferior electrical properties than that of 0.1 M ZTO back channel TFT. It was related to back channel effect because of having thin thickness of channel layer. Among these devices, 0.1 M ZTO back channel TFT had a lowest total trap density, outstanding electrical properties and stability. Therefore, we recommended IZO/ZTO (0.1 M) TFT as a promising channel structure for advanced display applications.

Electrical properties of CZTS pellets made from microwave-processed powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghediya, Prashant R., E-mail: prashantghediya@yahoo.co.in; Chaudhuri, Tapas K.

2015-06-24

Electrical properties of the kesterite copper zinc tin sulphide (CZTS) pellets in the temperature range from 300 K to 500 K are reported. The pellets are p-type with thermoelectric power (TEP) of + 175 µV/K. Electrical conductivity (σ) increases with the temperatures and is found to be due to thermionic emission (TE) over grain boundary (GB) barriers with activation energy of 170 meV. CZTS pellets are made from micropowders synthesized by microwave irradiation of precursor solution. Formation of kesterite CZTS is confirmed by X-ray diffraction (XRD) and Raman spectroscopy. Scanning Electron Microscope (SEM) shows that powder is micron sized spherical particles.

Properties of Semiconductors: Synthesis of Oriented ZnO for Photoelectrochemistry and Photoremediation

ERIC Educational Resources Information Center

Koenig, Emma; Jacobs, Ari; Lisensky, George

2017-01-01

Semiconductors are an important class of materials; preparing ZnO nanorods allows semiconducting properties to be easily observed. The week before lab, groups of four students take 15 min to setup two fluorine-doped tin oxide glass (FTO) slides in a zinc nitrate and hexamethylenetetramine solution stored at 90°C until the next lab. Hexagonal ZnO…

40 CFR 437.47 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2013 CFR

2013-07-01

... 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0... 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0....000739 Nickel 3.95 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662...

Influences of Silver and Zinc Contents in the Stannite Ag2ZnSnS4 Photoelectrodes on Their Photoelectrochemical Performances in the Salt-Water Solution.

PubMed

Cheng, Kong-Wei; Hong, Shu-Wei

2018-06-13

The multicomponent metal sulphide (stannite Ag2ZnSnS4) samples were grown onto the conductive metal oxide coated glass substrates by using the sulfurization of co-sputtering silver-zinc-tin precursors. Several [Ag]/[Zn+Sn] and [Zn]/[Sn] ratios were set in the metal precursors to investigate their influences on the crystal phases, microstructures and physical properties of the stannite Ag2ZnSnS4 samples. The results of the crystal phases and compositions of samples showed that the stannite Ag2ZnSnS4 phase can be obtained using the two-step sulfurization process, which maintained the silver-zinc-tin precursors at 160C for 1 hour and then kept them at 450oC for 30 minutes under sulfur/nitrogen atmosphere. N-type stannite Ag2ZnSnS4 samples with the carrier concentrations of 5.54x1012 - 9.11x1012 cm-3 can be obtained. High resistivities of Ag2ZnSnS4 samples were observed due to the low values of carrier concentration. Increasing the silver content in the sample can improve its PEC performance due to the decrease in the sample resistivity. The ratio of [Ag]/[Zn+Sn] kept at 0.8 and ratio of [Zn]/[Sn] set at 0.90 in the stannite Ag2ZnSnS4 sample had the highest photoelectrochemical performance of 0.31 mA.cm-2 with the potential set at 1.23 V vs. relative hydrogen electrode applied on the sample because of it having the lowest charge transfer resistance in electrolyte.

Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

NASA Astrophysics Data System (ADS)

Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

2014-08-01

Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Strategies to Reduce Tin and Other Metals in Electronic Cigarette Aerosol

PubMed Central

Williams, Monique; To, An; Bozhilov, Krassimir; Talbot, Prue

2015-01-01

Background Metals are present in electronic cigarette (EC) fluid and aerosol and may present health risks to users. Objective The objective of this study was to measure the amounts of tin, copper, zinc, silver, nickel and chromium in the aerosol from four brands of EC and to identify the sources of these metals by examining the elemental composition of the atomizer components. Methods Four brands of popular EC were dissected and the cartomizers were examined microscopically. Elemental composition of cartomizer components was determined using integrated energy dispersive X-ray microanalysis, and the concentrations of the tin, copper, zinc silver, nickel, and chromium in the aerosol were determined for each brand using inductively coupled plasma optical emission spectroscopy. Results All filaments were made of nickel and chromium. Thick wires were copper coated with either tin or silver. Wires were joined to each other by tin solder, brazing, or by brass clamps. High concentrations of tin were detected in the aerosol when tin solder joints were friable. Tin coating on copper wires also contributed to tin in the aerosol. Conclusions Tin concentrations in EC aerosols varied both within and between brands. Tin in aerosol was reduced by coating the thick wire with silver rather than tin, placing stable tin solder joints outside the atomizing chamber, joining wires with brass clamps or by brazing rather than soldering wires. These data demonstrate the feasibility of removing tin and other unwanted metals from EC aerosol by altering designs and using materials of suitable quality. PMID:26406602

Theoretic model and computer simulation of separating mixture metal particles from waste printed circuit board by electrostatic separator.

PubMed

Li, Jia; Xu, Zhenming; Zhou, Yaohe

2008-05-30

Traditionally, the mixture metals from waste printed circuit board (PCB) were sent to the smelt factory to refine pure copper. Some valuable metals (aluminum, zinc and tin) with low content in PCB were lost during smelt. A new method which used roll-type electrostatic separator (RES) to recovery low content metals in waste PCB was presented in this study. The theoretic model which was established from computing electric field and the analysis of forces on the particles was used to write a program by MATLAB language. The program was design to simulate the process of separating mixture metal particles. Electrical, material and mechanical factors were analyzed to optimize the operating parameters of separator. The experiment results of separating copper and aluminum particles by RES had a good agreement with computer simulation results. The model could be used to simulate separating other metal (tin, zinc, etc.) particles during the process of recycling waste PCBs by RES.

Synthesis of ligand-stabilized metal oxide nanocrystals and epitaxial core/shell nanocrystals via a lower-temperature esterification process.

PubMed

Ito, Daisuke; Yokoyama, Shun; Zaikova, Tatiana; Masuko, Keiichiro; Hutchison, James E

2014-01-28

The properties of metal oxide nanocrystals can be tuned by incorporating mixtures of matrix metal elements, adding metal ion dopants, or constructing core/shell structures. However, high-temperature conditions required to synthesize these nanocrystals make it difficult to achieve the desired compositions, doping levels, and structural control. We present a lower temperature synthesis of ligand-stabilized metal oxide nanocrystals that produces crystalline, monodisperse nanocrystals at temperatures well below the thermal decomposition point of the precursors. Slow injection (0.2 mL/min) of an oleic acid solution of the metal oleate complex into an oleyl alcohol solvent at 230 °C results in a rapid esterification reaction and the production of metal oxide nanocrystals. The approach produces high yields of crystalline, monodisperse metal oxide nanoparticles containing manganese, iron, cobalt, zinc, and indium within 20 min. Synthesis of tin-doped indium oxide (ITO) can be accomplished with good control of the tin doping levels. Finally, the method makes it possible to perform epitaxial growth of shells onto nanocrystal cores to produce core/shell nanocrystals.

Combinatorial study of zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

2008-01-01

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

Study of earth abundant tco and absorber materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Prabhakar, Tejas

In order to make photovoltaic power generation a sustainable venture, it is necessary to use cost-effective materials in the manufacture of solar cells. In this regard, AZO (Aluminum doped Zinc Oxide) and CZTS (Copper Zinc Tin Sulfide) have been studied for their application in thin film solar cells. While AZO is a transparent conducting oxide, CZTS is a photovoltaic absorber. Both AZO and CZTS consist of earth abundant elements and are non-toxic in nature. Highly transparent and conductive AZO thin films were grown using RF sputtering. The influence of deposition parameters such as working pressure, RF power, substrate temperature and flow rate on the film characteristics was investigated. The as-grown films had a high degree of preferred orientation along the (002) direction which enhanced at lower working pressures, higher RF powers and lower substrate temperatures. Williamson-Hall analysis on the films revealed that as the working pressure was increased, the nature of stress and strain gradually changed from being compressive to tensile. The fall in optical transmission of the films was a consequence of free carrier absorption resulting from enhanced carrier density due to incorporation of Al atoms or oxygen vacancies. The optical and electrical properties of the films were described well by the Burstein-Moss effect. CZTS absorber layers were grown using ultrasonic spray pyrolysis at a deposition temperature of 350 C and subsequently annealed in a sulfurization furnace. Measurements from XRD and Raman spectra confirmed the presence of pure single phase Cu2ZnSnS4. Texture analysis of as-deposited and annealed CZTS films indicated that the (112) plane which is characteristic of the kesterite phase was preferred. The grain size increased from 50 nm to 100 nm on conducting post-deposition annealing. CZTS films with stoichiometric composition yielded a band gap of 1.5 eV, which is optimal for solar energy conversion. The variation of tin in the film changed its resistivity by several orders of magnitude and subsequently the tin free ternary chalcogenide Cu2ZnS2 having very low resistivity was obtained. By carefully optimization of concentrations of tin, zinc and copper, a zinc-rich/tin-rich/copper-poor composition was found to be most suitable for solar cell applications. Etching of CZTS films using KCN solution reduced their resistivity, possibly due to the elimination of binary copper sulfide phases. CZTS solar cells were fabricated both in the substrate and superstrate configurations.

Synthesis of non-hydrazine solution processed Cu2(ZnSn)S4 thin films for solar cells applications

NASA Astrophysics Data System (ADS)

Gupta, Indu; Gupta, Preeti; Mohanty, Bhaskar Chandra

2017-05-01

Solution processing provides a versatile and inexpensive means to prepare Cu2ZnSnS4 (CZTS) thin films for photovoltaic applications. Differently with the reported growth of CZTS films from hydrazine based toxic solutions, we demonstrate a simple non-toxic ethanol based solution approach to synthesize the films. Using the chemical bath deposition (CBD) method, the CZTS thin films were grown from metal salts (copper chloride, zinc chloride, and tin chloride) in ethanol and monoethanol amine (MEA) and thioacetamide in ethanol as sulfur source in a single dip followed by sulfurization. The structure, composition, morphology and optical properties of the CZTS film were studied by X-ray diffraction, scanning electron microscopy and UV-vis spectroscopy. The results revealed that a post-deposition sulfurization is necessary to the phase formation and among all, sulfurization at 450°C for 60 min yielded phase pure CZTS films having kesterite structure, relatively compact morphology and an optical band gap of ˜1.52 eV indicating its suitability for solar cell applications. The results clearly validate the CBD method as a potential scalable route of preparation of CZTS thin films.

Metal Whiskers: A Discussion of Risks and Mitigation

DTIC Science & Technology

2010-11-30

efforts to investigate – Chromate conversion finishes DO NOT appear to stop whisker formation [4] S. Arnold, "Repressing the Growth of Tin Whiskers...November 30, 2010 Metal Whiskers 10 Examples of Metal Whiskers Zinc-Plated Steel Bus Rail with Yellow Chromate Conversion Finish Zinc whiskers grew...Metal Whiskers 11 Examples of Metal Whiskers Tin-Plated D-Sub Connector Shell Connector Advertised as “RoHS Compliant” November 30, 2010 Metal

An Investigation of Electrodeposited Alloys and Pure Metals as Substitutes for Zinc and Cadmium for Protective Finishes for Steel Parts of Aircraft

DTIC Science & Technology

1947-11-30

t » 35 Electropolishing Bath . .... 4 ... • »»«.»•» 35 Operating Conditions . ... ....«.»«•» 4 » . 35 Operating Details...electrodeposited or cast (Figure 6 , Appendix II, Table 4 , Appendix III). =trr 11. ’i. "•i Zinc - Tin Alloys The static potentials of the zinc - tin alloys...UJ Ul 8 J o < X-4130 ALLOY S2 ’I -O -o 4 O- o- 6 POTENTI- OMETER Q UJ CO UJ < o A FIGURE 2 ~ SCHEMATIC REPRESENTATION OF

Process for the manufacture of an attrition resistant sorbent used for gas desulfurization

DOEpatents

Venkataramani, Venkat S.; Ayala, Raul E.

2003-09-16

This process produces a sorbent for use in desulfurization of coal gas. A zinc titanate compound and a metal oxide are mixed by milling the compounds in an aqueous medium, the resulting mixture is dried and then calcined, crushed, sleved and formed into pellets for use in a moving-bed reactor. Metal oxides suitable for use as an additive in this process include: magnesium oxide, magnesium oxide plus molybdenum oxide, calcium oxide, yttrium oxide, hafnium oxide, zirconium oxide, cupric oxide, and tin oxide. The resulting sorbent has a percentage of the original zinc or titanium ions substituted for the oxide metal of the chosen additive.

Engineering and Development Support of General Decon Technology for the DARCOM Installation Restoration Program. Task 4. General Technology Literature Searches (II) Solidification Techniques for Lagoon Waters

DTIC Science & Technology

1980-12-01

40.8 Sodium 70.1 Zinc 0.01 37 The process includes the following steps (Pichat et al., 1979): - neutralization precipitation (silicates, borates...Compressive Strength of Polyester - Encapsulated Sodium Sulfate Waste Composite ....... .............. 64 9. Deep Chemical Mixer Mounted on a Barge...zinc, copper, lead, manganese and tin; sodium salts of arsenate, borate, phosphate, iodate, and sulfide; and sulfate salts. Sulfate salts form calcium

Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Williams, Bryce Arthur

A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis techniques. From these results, a deeper understanding of the interplay between the numerous annealing variables was achieved and improved annealing processes were developed.

Solution based zinc tin oxide TFTs: the dual role of the organic solvent

NASA Astrophysics Data System (ADS)

Salgueiro, Daniela; Kiazadeh, Asal; Branquinho, Rita; Santos, Lídia; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira

2017-02-01

Chemical solution deposition is a low cost, scalable and high performance technique to obtain metal oxide thin films. Recently, solution combustion synthesis has been introduced as a chemical route to reduce the processing temperature. This synthesis method takes advantage of the chemistry of the precursors as a source of energy for localized heating. According to the combustion chemistry some organic solvents can have a dual role in the reaction, acting both as solvent and fuel. In this work, we studied the role of 2-methoxyethanol in solution based synthesis of ZTO thin films and its influence on the performance of ZTO TFTs. The thermal behaviour of ZTO precursor solutions confirmed that 2-methoxyethanol acts simultaneously as a solvent and fuel, replacing the fuel function of urea. The electrical characterization of the solution based ZTO TFTs showed a slightly better performance and lower variability under positive gate bias stress when urea was not used as fuel, confirming that the excess fuel contributes negatively to the device operation and stability. Solution based ZTO TFTs demonstrated a low hysteresis (ΔV  =  -0.3 V) and a saturation mobility of 4-5 cm2 V-1 s-1.

40 CFR 437.46 - Pretreatment standards for existing sources (PSES).

Code of Federal Regulations, 2013 CFR

2013-07-01

....409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0.641 Organic Parameters Bis(2... 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0... Lead 1.32 0.283 Mercury 0.00234 0.000739 Nickel 3.95 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium...

Fort Campbell Childers House: Historic Maintenance and Repair Manual

DTIC Science & Technology

2006-09-01

coal-tar pitch and surfaced with a layer of gravel or slag in a heavy coat of asphalt or coal-tar pitch or finished with a cap sheet; generally used...such as lead, tin, copper, terneplate, and zinc with appropriate chemical methods because their finishes can be easily abraded by blasting methods...tin, copper, terneplate, and zinc with grit blasting which will abrade the surface of the metal. • Using cleaning methods, which alter or damage

Hybrid structure of biotemplate-zinc-tin oxide for better optical, morphological and photocatalytic properties

NASA Astrophysics Data System (ADS)

Karpuraranjith, M.; Thambidurai, S.

2017-03-01

A new chitosan (as biotemplate)-zinc-tin oxide hybrid structure was successfully synthesized by a chemical precipitation method and annealed at 500 °C. We studied the structural changes, optical, thermal and photo catalytic properties. The chemical bonding of the Zn-O and Sn-O-Sn functional groups were confirmed by FT-IR absorption peaks appearing at 538 and 635 cm-1. The different ratio of ZnO to SnO2 particles on the biotemplate matrix altered the morphology of the hybrids from an agglomerated state to a microcrystalline form confirmed by HR-SEM and TEM analysis. The formation of a Zn0.15Sn0.85O hybrid structure was observed in the visible light region, with an energy band gap of ˜3.19 eV and higher surface area of 98 m2 g-1. The thermal property shows that CS-Zn0.15Sn0.85O has a higher thermal stability than a CS-Zn0.25Sn0.75O hybrid structure. The results demonstrate that the biotemplate-zinc-tin oxide hybrid structure has a reinforced effect compared to the other components. Therefore, a biotemplate-based zinc-tin oxide hybrid structure could be a promising material for better dye removal efficiency, which was obtained for ˜100 and 96% with MB and RY-15 dyes.

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

Dual-step synthesis of 3-dimensional niobium oxide - Zinc oxide

NASA Astrophysics Data System (ADS)

Rani, Rozina Abdul; Zoolfakar, Ahmad Sabirin; Rusop, M.

2018-05-01

A facile fabrication process for constructing 3-dimensional (3D) structure of Niobium oxide - Zinc oxide (Nb2O5-ZnO) consisting of branched ZnO microrods on top of nanoporous Nb2O5 films was developed based on dual-step synthesis approach. The preliminary procedure was anodization of sputtered niobium metal on Fluorine doped Tin Oxide (FTO) to produce nanoporous Nb2O5, and continued with the growth of branched microrods of ZnO by hydrothermal process. This approach offers insight knowledge on the development of novel 3D metal oxide films via dual-step synthesis process, which might potentially use for multi-functional applications ranging from sensing to photoconversion.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Use of radiation in preparative chemistry

NASA Technical Reports Server (NTRS)

Philipp, W. H.; Marksik, S. J.; May, C. E.; Lad, R. A.

1971-01-01

A summary and updating of previous work on the use of radiation chemistry for the preparation of pure materials are presented. Work was chiefly concerned with the reduction of metal salts in solution to the free metal using 2 MeV electrons. Metals deposited from aqueous solution are copper, silver, zinc, cadmium, thallium, tin, lead, antimony, iron, nickel, cobalt, and palladium. Dry organic solvents were evaluated for the deposition of metals based on a study involving deposition of antimony from soltions of antimony (III) chloride. The use of organic liquids for the preparation of anhydrous metal halides is also presented. Reaction mechanisms for both organic liquids and aqueous system are discussed.

Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

DOEpatents

Lapshina, Elena V [Troitsk, RU; Zhuikov, Boris L [Troitsk, RU; Srivastava, Suresh C [Setauket, NY; Ermolaev, Stanislav V [Obninsk, RU; Togaeva, Natalia R [Obninsk, RU

2012-01-17

The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

Synthesis and characterization of single-crystalline zinc tin oxide nanowires

NASA Astrophysics Data System (ADS)

Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

2014-05-01

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Synthesis and characterization of single-crystalline zinc tin oxide nanowires.

PubMed

Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

2014-01-01

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for themore » performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.« less

PRECIPITATION OF PROTACTINIUM

DOEpatents

Moore, R.L.

1958-07-15

An lmprovement in the separation of protactinium from aqueous nitric acid solutions is described. 1t covers the use of lead dioxide and tin dioxide as carrier precipitates for the protactinium. In carrying out the process, divalent lead or divalent tin is addcd to the solution and oxidized, causing formation of a carrier precipitate of lead dioxide or stannic oxide, respectively.

Electrodeposition of nanostructured Sn-Zn coatings

NASA Astrophysics Data System (ADS)

Salhi, Y.; Cherrouf, S.; Cherkaoui, M.; Abdelouahdi, K.

2016-03-01

The electrodeposition of Sn-Zn coating at ambient temperature was investigated. The bath consists of metal salts SnCl2·2H2O and ZnSO4·7H2O and sodium citrate (NaC6H5Na3O7·2H2O) as complexing agent. To prevent precipitation, the pH is fixed at 5. Reducing tin and zinc through Sncit2- and ZnHcit- complex respectively is confirmed by the presence of two cathodic peaks on the voltammogram. The kinetic of tin (II) reduction process is limited by the SnCit2- dissociation. The SEM and TEM observations have showed that the coating consists of a uniform Sn-Zn layer composed of fine grains on which tin aggregates grow up. XRD revealed peaks corresponding to the hexagonal Zn phase and the tetragonal β-Sn phase.

Facile and Rapid Growth of Nanostructured Ln-BTC Metal-Organic Framework Films by Electrophoretic Deposition for Explosives sensing in Gas and Cr 3+ Detection in Solution.

PubMed

Feng, Ji-Fei; Yang, Xue; Gao, Shui-Ying; Shi, Jianlin; Cao, Rong

2017-12-19

Until now, it has been a challenge to prepare lanthanide metal-organic framework films on traditional substrates, like zinc plate, indium oxide (ITO), and fluorine-doped tin oxide (FTO) glasses in a rapid and facile method. In this paper, continuous and dense Ln-BTC MOFs films on unmodified low-cost substrates have been rapidly and easily fabricated though the newly developed electrophoretic deposition (EPD) method in 5 min. Moreover, the as-prepared luminescent films were successfully used for the detection of nitrobenzene (NB), trinitrotoluene (TNT) in gas phases, as well as NB, Cr 3+ ions for detection in solution.

Recovery of tin from metal powders of waste printed circuit boards.

PubMed

Yang, Tianzu; Zhu, Pengchun; Liu, Weifeng; Chen, Lin; Zhang, Duchao

2017-10-01

To avoid the adverse effects of tin on the smelting process used to recover copper from metal powders of waste printed circuit boards, an effective process is proposed that selectively extracts tin and its associated metals. That impacts of alkaline pressure oxidation leaching parameters on metal conversion were systematically investigated. The results showed that Sn, Pb, Al and small amounts of Zn in the metal powders were leached out, leaving copper residue. By optimizing the conditions, leaching recovery of 98.2%, 77.6%, 78.3 and 6.8% for Sn, Pb, Al and Zn, respectively, were achieved. Subsequently, more than 99.9% of Pb and Zn in the leaching solution were removed as a mixture of PbS-ZnS in the purification process, which can be used as a raw material in Pb smelting. Approximately 86.2% of Sn in the purified solution was recovered by electrowinning, and the purity of the cathode tin was over 99.8%. Copyright © 2017 Elsevier Ltd. All rights reserved.

Trace elements in seminal plasma of men from infertile couples.

PubMed

Guzikowski, Wojciech; Szynkowska, Małgorzata I; Motak-Pochrzęst, Hanna; Pawlaczyk, Aleksandra; Sypniewski, Stanisław

2015-06-19

An analysis of lead, zinc, cadmium and other trace elements in semen of men from infertile couples was performed to determine the association between abnormal semen parameters and enviromental or occupational exposure to some trace metals. Presence of manganese, cobalt, nickel, copper, zinc, molybdenum, cadmium, tin and lead was measured in seminal plasma of 34 men from infertile couples using spectrometry with time-of-flight analysis. Correlations among sperm parameters and trace metals were determined using cluster analysis and Pearson's correlation coefficient. Abnormally high concentrations of lead, cadmium, zinc and cobalt were found in 23 seminal plasma of men from infertile couples. The most consistent evidence was determined for an association between high cadmium concentration in seminal plasma and sperm count, motility and morphology below reference limits (p < 0.01). A correlation of significantly increased tin level and reduced sperm count in semen of men with limited fertility potential was observed (p = 0.04). In our study we observed a correlation of tin level with sperm count in semen of men with limited fertility potential.

[Exposure to metal compounds in occupational galvanic processes].

PubMed

Surgiewicz, Jolanta; Domański, Wojciech

2006-01-01

Occupational galvanic processes are provided in more than 600 small and medium enterprises in Poland. Workers who deal with galvanic coating are exposed to heavy metal compounds: tin, silver, copper and zinc. Some of them are carcinogenic, for example, hexavalent chromium compounds, nickel and cadmium compounds. Research covered several tens of workstations involved in chrome, nickel, zinc, tin, silver, copper and cadmium plating. Compounds of metals present in the air were determined: Cr, Ni, Cd, Sn, Ag--by atomic absorption spectrometry with electrothermal atomization (ET-AAS) and Zn--by atomic absorption spectrometry with flame atomization (F-AAS). The biggest metal concentrations--of silver and copper--were found at workstations of copper, brass, cadmium, nickel and chrome plating, conducted at the same time. Significant concentrations of copper were found at workstations of maintenance bathing and neutralizing of sewage. The concentrations of metals did not exceed Polish MAC values. MAC values were not exceeded for carcinogenic chromium(VI), nickel or cadmium, either. In galvanic processes there was no hazard related to single metals or their compounds, even carcinogenic ones. Combined exposure indicators for metals at each workstation did not exceed 1, either. However, if there are even small quantities of carcinogenic agents, health results should always be taken into consideration.

Silver-tin alloys and amalgams: electrochemical considerations.

PubMed

Mueller, H J

1980-01-01

The corrosion potential and anodic polarization profiles of a representative number of silver-tin alloys and their corresponding amalgams in a physiological solution were determined and compared to their microstructures. For the alloys with tin-content greater than 27%(wt) and for all amalgams, the corrosion process is related to the attack of free tin for the alloys and to the gamma-2 tin for the amalgams. The gamma-2 concentration in the amalgams increases with an increase in tin-content. For alloys with tin-content less than 27%, the corrosion process is even more restricted than for the process observed with pure silver. From a developed theory based upon the potential-time and polarization results, association of the O2 reduction process on a SnO cathodic film to an intermediate specie of H2O2 is made. The rate of H2O2 decomposition on a SnO surface in a four electron process is thought to control the O2 reduction overvoltage. The O2 reduction overvoltage decreases with increases in the silver-content of the amalgam, particularily seen with the 8 and 12% tin compositions. Due to the polarization induced corrosion process, a phase with high silver and high mercury concentrations was observed over the unreacted particles.

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu; Johnson, Forrest

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. %more » Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.« less

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Realizing Full Coverage of Stable Perovskite Film by Modified Anti-Solvent Process

NASA Astrophysics Data System (ADS)

Ji, Long; Zhang, Ting; Wang, Yafei; Zhang, Peng; Liu, Detao; Chen, Zhi; Li, Shibin

2017-05-01

Lead-free solution-processed solid-state photovoltaic devices based on formamidinium tin triiodide (FASnI3) and cesium tin triiodide (CsSnI3) perovskite semiconductor as the light harvester are reported. In this letter, we used solvent engineering and anti-solvent dripping method to fabricate perovskite films. SnCl2 was used as an inhibitor of Sn4+ in FASnI3 precursor solution. We obtained the best films under the function of toluene or chlorobenzene in anti-solvent dripping method and monitored the oxidation of FASnI3 films in air. We chose SnF2 as an additive of CsSnI3 precursor solution to prevent the oxidation of the Sn2+, improving the stability of CsSnI3. The experimental results we obtained can pave the way for lead-free tin-based perovskite solar cells (PSCs).

Germanium and indium

USGS Publications Warehouse

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in southeastern Yunnan Province), and the Dabaoshan SEDEX deposit (located in the Nanling region of China) contain indium-enriched sphalerite. Another major potential source of indium occurs in the polymetallic tin-tungsten belt in the Eastern Cordillera of the Andes Mountains of Bolivia. Deposits there occur as dense arrays of narrow, elongate, indium-enriched tin oxide-polymetallic sulfide veins in volcanic rocks and porphyry stocks.Information about the behavior of germanium and indium in the environment is limited. In surface weathering environments, germanium and indium may dissolve from host minerals and form complexes with chloride, fluoride, hydroxide, organic matter, phosphate, or sulfate compounds. The tendency for germanium and indium to be dissolved and transported largely depends upon the pH and temperature of the weathering solutions. Because both elements are commonly concentrated in sulfide minerals, they can be expected to be relatively mobile in acid mine drainage where oxidative dissolution of sulfide minerals releases metals and sulfuric acid, resulting in acidic pH values that allow higher concentrations of metals to be dissolved into solution.

Design of an experiment for the production of a foamed tin sample

NASA Technical Reports Server (NTRS)

Wernimont, E.

1986-01-01

One of the major experiments in the GAS container is concerned with the experimental production of a foamed metal. A foamed metal is one that contains a significant amount of gas bubbles suspended in its solid volume. Purdue's GAS team proposes to do this with the help of a solid zinc carbonate that gives off carbon dioxide at high temperatures. Because of low energy requirements, the metal used for this experiment is tin. It is hoped that the use of near zero environment will keep the suspended bubbles more uniform than in an Earth based process, hence not depleting the physical strength of the material as greatly as is observed on Earth.

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Grehl, Thomas; Brongersma, Hidde H.

2016-03-15

A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with atomic layer deposition requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitivemore » technique of low energy ion scattering, combined with bulk composition and thickness determination, and x-ray diffraction. At the low temperatures used for deposition (150 °C), there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnO{sub x} matrix is deduced. Postannealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn{sub 2}SnO{sub 4}. Annealing to 800 °C results in films containing crystalline Zn{sub 2}SnO{sub 4}, or multilayered films of crystalline ZnO, Zn{sub 2}SnO{sub 4}, and SnO{sub 2} phases, depending on the bilayer period.« less

Low-temperature solution-processed zinc oxide field effect transistor by blending zinc hydroxide and zinc oxide nanoparticle in aqueous solutions

NASA Astrophysics Data System (ADS)

Shin, Hyeonwoo; Kang, Chan-mo; Baek, Kyu-Ha; Kim, Jun Young; Do, Lee-Mi; Lee, Changhee

2018-05-01

We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO • H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (I on/I off), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH‑ impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.

Tin recovery from tin slag using electrolysis method

NASA Astrophysics Data System (ADS)

Jumari, Arif; Purwanto, Agus; Nur, Adrian; Budiman, Annata Wahyu; Lerian, Metty; Paramita, Fransisca A.

2018-02-01

The process in industry, including in mining industry, would surely give negative effect such as waste polluting to the environment. Some of waste could be potentially reutilized to be a commodity with the higher economic value. Tin slag is one of them. The aim of this research was to recover the tin contained in tin slag. Before coming to the electrolysis, tin slag must be treated by dissolution. The grinded tin slag was dissolved into HCl solution to form a slurry. During dissolution, the slurry was agitated and heated, and finally filtered. The filtrate obtained was then electrolyzed. During the process of electrolysis, solid material precipitated on the used cathode. The precipitated solid was then separated and dried. The solid was then analyzed using XRD, XRF and SEM. The XRD analysis showed that the longest time of dissolution and electrolysis the highest the purity obtained in the product. The SEM analysis showed that the longest time of electrolysis the smallest tin particle obtained. Optimum time achieved in this research was 2 hours for the recovering time and 3 hours for the electrolysis time, with 9% tin recovered.

Corrosion Behavior of Carbon Steel in Concrete Material Composed of Tin Slag Waste in Aqueous Chloride Solution

NASA Astrophysics Data System (ADS)

Rustandi, Andi; Cahyadi, Agung; Taruli Siallagan, Sonia; Wafa' Nawawi, Fuad; Pratesa, Yudha

2018-01-01

Tin slag is a byproduct of tin ore smelting process which is rarely utilized. The main purpose of this work is to investigate the use of tin slag for concrete cement material application compared to the industrial Ordinary Portland Cement (OPC). Tin slag composition was characterized by XRD and XRF analysis. The characterization results showed the similar chemical composition of tin slag and OPC. It also revealed the semi crystalline structure of tin slag sample. Several electrochemical tests were performed to evaluate corrosion behavior of tin slag, OPC and various mixed composition of both materials and the addition of CaO. The corrosion behavior of OPC and tin slag were evaluated by using Cyclic Polarization, Electrochemical Impedance Spectroscopy (EIS) and Electrochemical Frequency Modulation (EFM) methods. Aqueous sodium chloride (NaCl) solution with 3.5% w.t concentration which similar to seawater was used as the electrolyte in this work. The steel specimen used as the reinforce bar (rebar) material of the concrete was carbon steel AISI 1045. The rebar was embedded in the concrete cement which composed of OPC and the various composition of tin slag including slag without addition of CaO and slag mixed with addition of 50 % CaO. The electrochemical tests results revealed that tin slag affected its corrosion behavior which becoming more active and increasing the corrosion rate as well as decreasing the electrochemical impedance.

Nanoporous structures on ZnO thin films

NASA Astrophysics Data System (ADS)

Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

2010-01-01

Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Structural and Thermodynamic Consequences of the Replacement of Zinc with Environmental Metals on ERα-DNA Interactions

PubMed Central

Deegan, Brian J.; Bona, Anna M.; Bhat, Vikas; Mikles, David C.; McDonald, Caleb B.; Seldeen, Kenneth L.; Farooq, Amjad

2011-01-01

Estrogen receptor α (ERα) acts as a transcription factor by virtue of the ability of its DNA-binding (DB) domain, comprised of a tandem pair of zinc fingers, to recognize the estrogen response element (ERE) within the promoters of target genes. Herein, using an array of biophysical methods, we probe structural consequences of the replacement of zinc within the DB domain of ERα with various environmental metals and their effects on the thermodynamics of binding to DNA. Our data reveal that while the DB domain reconstituted with divalent ions of zinc, cadmium, mercury and cobalt binds to DNA with affinities in the nanomolar range, divalent ions of barium, copper, iron, lead, manganese, nickel and tin are unable to regenerate DB domain with DNA-binding potential though they can compete with zinc for coordinating the cysteine ligands within the zinc fingers. We also show that the metal-free DB domain is a homodimer in solution and that the binding of various metals only results in subtle secondary and tertiary structural changes, implying that metal-coordination may only be essential for DNA-binding. Collectively, our findings provide mechanistic insights into how environmental metals may modulate the physiological function of a key nuclear receptor involved in mediating a plethora of cellular functions central to human health and disease. PMID:22038807

Influence of Sn doping on structural, optical and electrical properties of ZnO thin films prepared by cost effective sol-gel process.

PubMed

Vishwas, M; Narasimha Rao, K; Arjuna Gowda, K V; Chakradhar, R P S

2012-09-01

Tin (Sn) doped zinc oxide (ZnO) thin films were synthesized by sol-gel spin coating method using zinc acetate di-hydrate and tin chloride di-hydrate as the precursor materials. The films were deposited on glass and silicon substrates and annealed at different temperatures in air ambient. The agglomeration of grains was observed by the addition of Sn in ZnO film with an average grain size of 60 nm. The optical properties of the films were studied using UV-VIS-NIR spectrophotometer. The optical band gap energies were estimated at different concentrations of Sn. The MOS capacitors were fabricated using Sn doped ZnO films. The capacitance-voltage (C-V), dissipation vs. voltage (D-V) and current-voltage (I-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated. The porosity and surface area of the films were increased with the doping of Sn which makes these films suitable for opto-electronic applications. Copyright © 2012 Elsevier B.V. All rights reserved.

40 CFR 437.46 - Pretreatment standards for existing sources (PSES)

Code of Federal Regulations, 2011 CFR

2011-07-01

....218 0.0662 Zinc 2.87 0.641 Organic Parameters Bis(2-ethylhexyl) phthalate 0.267 0.158 Carbazole 0.392... Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0.641 Organic Parameters Bis(2-ethylhexyl) phthalate... Tin 0.249 0.146 Zinc 6.95 4.46 Organic Parameters Bis (2-ethylhexyl) phthalate 0.267 0.158 Carbazole 0...

Electrochemical mechanism of tin membrane electrodeposition under ultrasonic waves.

PubMed

Nan, Tianxiang; Yang, Jianguang; Chen, Bing

2018-04-01

Tin was electrodeposited from chloride solutions using a membrane cell under ultrasonic waves. Cyclic voltammetry (CV), linear sweep voltammetry (LSV), chronoamperometry (CHR), and chronopotentiometry were applied to investigate the electrochemical mechanism of tin electrodeposition under ultrasonic field. Chronoamperometry curves showed that the initial process of tin electrodeposition followed the diffusion controlled three-dimensional nucleation and grain growth mechanism. The analysis of the cyclic voltammetry and linear sweep voltammetry diagrams showed that the application of ultrasound can change the tin membrane electro-deposition reaction from diffusion to electrochemical control, and the optimum parameters for tin electrodeposition were H + concentration 3.5 mol·L -1 , temperature 35 °C and ultrasonic power 100 W. The coupling ultrasonic field played a role in refining the grain in this process. The growth of tin crystals showed no orientation preferential, and the tin deposition showed a tendency to form a regular network structure after ultrasonic coupling. While in the absence of ultrasonic coupling, the growth of tin crystals has a high preferential orientation, and the tin deposition showed a tendency to form tin whiskers. Ultrasonic coupling was more favorable for obtaining a more compact and smoother cathode tin layer. Copyright © 2017 Elsevier B.V. All rights reserved.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

Studies on the electrodeposition of tin from acidic chloride-gluconate solutions

NASA Astrophysics Data System (ADS)

Rudnik, Ewa; Włoch, Grzegorz

2013-01-01

Electrodeposition of tin from acidic chloride-gluconate baths was investigated. Equilibrium distribution of tin(II) species showed domination of Sn(II)-gluconate complexes, but for Sn2+ concentrations 50 mM or higher increased percentage of Sn(II)-chloride complexes was found. Cyclic voltammetry, anodic stripping analysis and potentiostatic measurements indicated that rate of the cathodic process is determined by the release of metal cations from gluconate complexes in diluted bath (5 mM), but for more concentrated solutions reduction of Sn(II) ions run under diffusion control. Studies of anodic response showed that it depends on the Sn(II)/Glu ratio in the bath and deposition potential due to development of different planes of metal crystal. Average effective diffusion coefficients of metal species were determined. Morphology and structure tin deposits were also presented.

Effect of Sn doping on structural, mechanical, optical and electrical properties of ZnO nanoarrays prepared by sol-gel and hydrothermal process

NASA Astrophysics Data System (ADS)

Agarwal, Manish Baboo; Sharma, Akash; Malaidurai, M.; Thangavel, R.

2018-05-01

Undoped and Sn doped Zinc oxide nanorods were prepared by two step process: initially growth of seed layers by sol-gel spin coating technique and then zinc oxide nanorods by hydrothermal process using the precursors zinc nitrate hexahydrate, hexamine and tin chloride. The effects on the electrical, optical, mechanical and structural properties for various Sn concentrations were studied. The crystalline phase determination from X-ray diffraction (XRD) confirms that Sn doped ZnO nanorods have hexagonal wurtzite structure. The variations of stress and strain with different doping concentration of Sn in ZnO nanorods were studied. The doping effect on electrical properties and optical bandgap is estimated by current voltage characteristics and absorbance spectra respectively. The surface morphology was studied with field emission scanning electron microscope (FESEM), which shows that the formation of hexagonal nanorods arrays with increasing Sn concentration. The calculated value of Young's modulus of elasticity (Y) for all the samples remains same. These results can be used in optoelectronic devices.

The influence of visible light on transparent zinc tin oxide thin film transistors

NASA Astrophysics Data System (ADS)

Görrn, P.; Lehnhardt, M.; Riedl, T.; Kowalsky, W.

2007-11-01

The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage Vth, saturation field effect mobility μsat, and an increase of the off current are found. The time scale of the recovery in the dark is governed by the persistent photoconductivity in the semiconductor. Devices with tuned [Zn]:[Sn] ratio show a shift of Vth of less 2V upon illumination at 5mW/cm2 (brightness >30000cd/m2) throughout the visible spectrum. These results demonstrate TTFTs which are candidates as pixel drivers in transparent active-matrix organic light emitting diode displays.

Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

NASA Astrophysics Data System (ADS)

Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

2017-02-01

Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

NASA Astrophysics Data System (ADS)

Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong

2016-04-01

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.

Attachment of Quantum Dots on Zinc Oxide Nanorods

NASA Astrophysics Data System (ADS)

Seay, Jared; Liang, Huan; Harikumar, Parameswar

2011-03-01

ZnO nanorods grown by hydrothermal technique are of great interest for potential applications in photovoltaic and optoelectronic devices. In this study we investigate the optimization of the optical absorption properties by a low temperature, chemical bath deposition technique. Our group fabricated nanorods on indium tin oxide (ITO) substrate with precursor solution of zinc nitrate hexahydrate and hexamethylenetramine (1:1 molar ratio) at 95C for 9 hours. In order to optimize the light absorption characteristics of ZnO nanorods, CdSe/ZnS core-shell quantum dots (QDs) of various diameters were attached to the surface of ZnO nanostructures grown on ITO and gold-coated silicon substrates. Density of quantum dots was varied by controlling the number drops on the surface of the ZnO nanorods. For a 0.1 M concentration of QDs of 10 nm diameter, the PL intensity at 385 nm increased as the density of the quantum dots on ZnO nanostructures was increased. For quantum dots at 1 M concentration, the PL intensity at 385 nm increased at the beginning and then decreased at higher density. We will discuss the observed changes in PL intensity with QD concentration with ZnO-QD band structure and recombination-diffusion processes taking place at the interface.

Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

PubMed

Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

2015-06-21

A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV).

Pourbaix Diagrams at Elevated Temperatures A Study of Zinc and Tin

NASA Astrophysics Data System (ADS)

Palazhchenko, Olga

Metals in industrial settings such as power plants are often subjected to high temperature and pressure aqueous environments, where failure to control corrosion compromises worker and environment safety. For instance, zircaloy (1.2-1.7 wt.% Sn) fuel rods are exposed to aqueous 250-310 °C coolant in CANDU reactors. The Pourbaix (EH-pH) diagram is a plot of electrochemical potential versus pH, which shows the domains of various metal species and by inference, corrosion susceptibility. Elevated temperature data for tin +II and tin +IV species were obtained using solid-aqueous phase equilibria with the respective oxides, in a batch vessel with in-situ pH measurement. Solubilities, determined via spectroscopic techniques, were used to calculate equilibrium constants and the Gibbs energies of Sn complexes for E-pH diagram construction. The SnOH3+ and Sn(OH )-5 species were incorporated, for the first time, into the 298.15 K and 358.15 K diagrams, with novel Go values determined at 358.15 K. Key words: Pourbaix diagrams, EH-pH, elevated temperatures, solubility, equilibrium, metal oxides, hydrolysis, redox potential, pH, thermochemical data, tin, zinc, zircaloy, corrosion, passivity.

Metal oxide nanorod arrays on monolithic substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can includemore » a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.« less

PROCESS OF MAKING SHAPED FUEL FOR NUCLEAR REACTORS

DOEpatents

O'Leary, W.J.; Fisher, E.A.

1964-02-11

A process for making uranium dioxide fuel of great strength, density, and thermal conductivity by mixing it with 0.1 to 1% of a densifier oxide (tin, aluminum, zirconium, ferric, zinc, chromium, molybdenum, titanium, or niobium oxide) and with a plasticizer (0.5 to 3% of bentonite and 0.05 to 2% of methylcellulose, propylene glycol alginate, or ammonium alginate), compacting the mixture obtained, and sintering the bodies in an atmosphere of carbon monoxide or carbon dioxide, with or without hydrogen, or of a nitrogen-hydrogen mixture is described. (AEC)

Cadmium Alternatives High Strength Steel JTP

DTIC Science & Technology

2005-03-01

Cadmium Alternatives HSS JTP Alternative Coatings Selected by JCAT: Primary Repair LHE Cadmium (control) IVD Aluminum (control) Zinc-Nickel, acid...Tin-Zinc Cadmium Alternatives HSS JTP Demonstration Tests Selected by JCAT: Phase I Phase II Hydrogen Embrittlement Hydrogen Re-Embrittlement (NRB...immersion, exposed C-ring (Army)) Bend Adhesion (Q/A) Appearance Throwing Power Composition Uniformity Strippability Galvanic Potential Bend Adhesion

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

In situ microcosms to study the impact of heavy metals resuspended by dredging on periphyton in a tropical estuary.

PubMed

Nayar, S; Goh, B P L; Chou, L M; Reddy, S

2003-08-20

Ponggol estuary, located on the northeastern coast of Singapore, is heavily impacted by reclamation, dredging, construction and shipping. Tin, lead, nickel, cadmium, copper and zinc in the particulate and dissolved fraction and in sediments were monitored biweekly in the estuary from July 1999 to June 2000. The concentrations of tin, lead, nickel, cadmium, copper and zinc were observed to range from ND-92 ppm, ND-303 ppm, ND-2818 ppm, ND-74 ppm, ND-1117 ppm and ND-137000 ppm, respectively, in the dissolved, particulate and sediments fractions. Intensive dredging activity occurred during the monitoring period, and this may have led to the resuspension and increased bioavailability of particulate metals. Periphytic algae were established on glass slides and exposed to previously measured environmental levels of heavy metals using in situ estuarine microcosms. The toxicity of heavy metals in various fractions to periphytic algae was assessed from the changes in their chlorophyll a content. Cadmium had the least significant effect followed by lead, zinc, nickel, tin and copper at all concentrations tested. A reduction in periphyton biomass (with respect to controls) of 95-100% was observed for treatments with metals in particulate form. In addition, exposure to contaminated sediments for 3 days significantly decreased chlorophyll a by 90-99% compared to controls. High concentrations of zinc (9893-17240 mg l(-1)), copper (5-11 mg l(-1)) and cadmium (1-1.8 mg l(-1)) recorded in the aqueous phase of treatment microcosms, and attributed to release from the contaminated sediments, could account for the toxicity to periphyton.

Recycling of an electric arc furnace flue dust to obtain high grade ZnO.

PubMed

Ruiz, Oscar; Clemente, Carmen; Alonso, Manuel; Alguacil, Francisco Jose

2007-03-06

The production of steel in electric arc furnace (EAF) generates a by-product called EAF dusts. These steelmaking flue dusts are classified in most industrialized countries as hazardous residues because the heavy metals contained in them, tend to leach under slightly acidic rainfall conditions. However, and at the same time they contain zinc species which can be used as a source to obtain valuable by-products. The present investigation shows results on the processing of an EAF flue dust using ammonium carbonate solutions. Once zinc is dissolved: ZnO + 4NH3 + H2O --> Zn(NH3)4(2+) + 2OH- with other impurities (i.e. cadmium and copper), these are eliminated from the zinc solution via cementation with metallic zinc. The purified zinc solution was evaporated (distilled) until precipitation of a zinc carbonate species, which then was calcined to yield a zinc oxide of a high grade. For the unattacked dust residue from the leaching operation, mainly composed of zinc ferrite, several options can be considered: back-recycling to the furnace, further treatment by sodium hydroxide processing or a more safely dumping due to its relatively inertness.

Novel Film Formation Pathways for Copper Zinc Tin Selenide for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Bendapudi, Sree Satya Kanth

Because of the anticipated high demand for Indium, ongoing growth of CIGS technology may be limited. Kesterite materials, which replace In with a Zn/Sn couple, are thought to be a solution to this issue. However, efficiencies are still below the 10% level, and these materials are proving to be complex. Even determination of the bandgap is not settled because of the occurrence of secondary phases. We use a film growth process, 2SSS, which we believe helps control the formation of secondary phases. Under the right growth conditions we find 1/1 Zn/Sn ratios and XRD signatures for Cu2ZnSnSe 4 with no evidence of secondary phases. The optical absorption profile of our films is also a good match to the CIS profile even for films annealed at 500°C. We see no evidence of phase separation. The effect of intentional variation of the Zn/Sn ratio on material and device properties is also presented.

An enhanced mangiferaindica for dye sensitized solar cell application

NASA Astrophysics Data System (ADS)

Uno, U. E.; Emetere, M. E.; Fadipe, L. A.; Oluranti, Jonathan

2016-02-01

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO2 conductive. The DSSC fabricated consist of 2.25 cm2 active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filled with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10-2, current density (Jsc)=4.07×10-2, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.

Nanocrystal grain growth and device architectures for high-efficiency CdTe ink-based photovoltaics.

PubMed

Crisp, Ryan W; Panthani, Matthew G; Rance, William L; Duenow, Joel N; Parilla, Philip A; Callahan, Rebecca; Dabney, Matthew S; Berry, Joseph J; Talapin, Dmitri V; Luther, Joseph M

2014-09-23

We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

Photonic Nanoparticle Doped Architectures for Enhanced Solar to Fuel Photocatalytic Conversion 154060

DTIC Science & Technology

2016-12-09

coverage of the ZIS shell. We are also exploring the use of nanoshells coated with tin oxide (SnO2) rather than silica (SiO2) and coating the GS-NSs with...exploring the use of nanoshells coated with tin oxide (SnO2) rather than silica (SiO2) and coating the GS-NSs with zinc- and antimony-doped SnO2...to the preparation of GS-NS@SiO2 particles, we are also exploring the GS-NS coated with tin oxide (SnO2) and doped SnO2. Nanoshells with other

Stabilizing contact resistance of isotropically conductive adhesives on various metal surfaces by incorporating sacrificial anode materials

NASA Astrophysics Data System (ADS)

Moon, Kyoung-Sik; Liong, Silvia; Li, Haiying; Wong, C. P.

2004-11-01

The contact resistance stability of isotropically conductive adhesives (ICAs) on non-noble metal surfaces under the 85°C/85% relative humidity (RH) aging test was investigated. Previously, we demonstrated that galvanic corrosion has been shown as the main mechanism of the unstable contact resistance of ICAs on non-noble metal surfaces. A sacrificial anode was introduced into the ICA joint for cathodic protection. Zinc, chromium, and magnesium were employed in the ICA formulations as sacrificial anode materials that have much lower electrode-potential values than the metal pad surface, such as tin or tin-based alloys. The effect of particle sizes and loading levels of sacrificial anode materials were studied. Chromium was not as effective in suppressing corrosion as magnesium or zinc because of its strong tendency to self-passivate. The corrosion potential of ICAs was reduced by half with the addition of zinc and magnesium into the ICA formulation. The addition of zinc and magnesium was very effective in controlling galvanic corrosion that takes place in the ICA joints, resulting in stabilized contact resistance of ICAs on Sn, SnPb, and SnAgCu surfaces during the 85°C/85% RH aging test.

Solder poisoning

MedlinePlus

... can be harmful are: Antimony Bismuth Cadmium Copper Ethylene glycol Lead Mild acids Silver Tin Zinc ... INTESTINES Diarrhea Vomiting SKIN Yellow skin Symptoms for ethylene glycol: Disturbance in the acid balance of the ...

Tin, Bismuth, and Tin-Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents.

PubMed

Vieira, Luciana; Burt, Jennifer; Richardson, Peter W; Schloffer, Daniel; Fuchs, David; Moser, Alwin; Bartlett, Philip N; Reid, Gillian; Gollas, Bernhard

2017-06-01

The electrodeposition of tin, bismuth, and tin-bismuth alloys from Sn II and Bi III chlorometalate salts in the choline chloride/ethylene glycol (1:2 molar ratio) deep eutectic solvent was studied on glassy carbon and gold by cyclic voltammetry, rotating disc voltammetry, and chronoamperometry. The Sn II -containing electrolyte showed one voltammetric redox process corresponding to Sn II /Sn 0 . The diffusion coefficient of [SnCl 3 ] - , detected as the dominating species by Raman spectroscopy, was determined from Levich and Cottrell analyses. The Bi III -containing electrolyte showed two voltammetric reduction processes, both attributed to Bi III /Bi 0 . Dimensionless current/time transients revealed that the electrodeposition of both Sn and Bi on glassy carbon proceeded by 3D-progressive nucleation at a low overpotential and changed to instantaneous at higher overpotentials. The nucleation rate of Bi on glassy carbon was considerably smaller than that of Sn. Elemental Sn and Bi were electrodeposited on Au-coated glass slides from their respective salt solutions, as were Sn-Bi alloys from a 2:1 Sn II /Bi III solution. The biphasic Sn-Bi alloys changed from a Bi-rich composition to a Sn-rich composition by making the deposition potential more negative.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

NASA Astrophysics Data System (ADS)

Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael

We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Ah Young; Ji, Hyuk; Kim, Sang Tae

2016-04-11

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

ELECTROLYSIS OF THORIUM AND URANIUM

DOEpatents

Hansen, W.N.

1960-09-01

An electrolytic method is given for obtaining pure thorium, uranium, and thorium-uranium alloys. The electrolytic cell comprises a cathode composed of a metal selected from the class consisting of zinc, cadmium, tin, lead, antimony, and bismuth, an anode composed of at least one of the metals selected from the group consisting of thorium and uranium in an impure state, and an electrolyte composed of a fused salt containing at least one of the salts of the metals selected from the class consisting of thorium, uranium. zinc, cadmium, tin, lead, antimony, and bismuth. Electrolysis of the fused salt while the cathode is maintained in the molten condition deposits thorium, uranium, or thorium-uranium alloys in pure form in the molten cathode which thereafter may be separated from the molten cathode product by distillation.

Reductive atmospheric acid leaching of spent alkaline batteries in H2SO4/Na2SO3 solutions

NASA Astrophysics Data System (ADS)

Morcali, Mehmet Hakan

2015-07-01

This work studies the optimum reductive leaching process for manganese and zinc recovery from spent alkaline battery paste. The effects of reducing agents, acid concentration, pulp density, reaction temperature, and leaching time on the dissolution of manganese and zinc were investigated in detail. Manganese dissolution by reductive acidic media is an intermediate-controlled process with an activation energy of 12.28 kJ·mol-1. After being leached, manganese and zinc were selectively precipitated with sodium hydroxide. The zinc was entirely converted into zincate (Zn(OH){4/2-}) ions and thus did not co-precipitate with manganese hydroxide during this treatment (2.0 M NaOH, 90 min, 200 r/min, pH > 13). After the manganese was removed from the solution, the Zn(OH){4/2-} was precipitated as zinc sulfate in the presence of sulfuric acid. The results indicated that this process could be effective in recovering manganese and zinc from alkaline batteries.

Preparation & characterization of high purity Cu2 ZnSn(SxSe1-x)4 nanoparticles

NASA Astrophysics Data System (ADS)

Negash, Bethlehem G.

Research in thin film solar cells applies novel techniques to synthesize cost effective and highly efficient absorber materials in order to generate electricity directly from solar energy. Of these materials, copper zinc tin sulfoselenide (Cu2ZnSn(SxSe1-x) 4) nanoparticles have shown great promise in solar cell applications due to optimal material properties as well as low cost & relative abundance of materials.1,2 Sulfoselenide nanoparticles have also a broader impact in other industries including electronics3, LED 4, and biomedical research5. Of the many routes of manufacturing these class of semiconductors, colloidal synthesis of Cu 2ZnSn(SxSe1-x)4 offers a scalable, low cost and high-throughput route for manufacturing high efficiency thin-film solar cells. Hydrazine processed Cu2ZnSn(SxSe1-x )4 devices have reached a record power conversion efficiency (PCE) of 12.6%, much higher than the 9.6% reported for physical vapor deposition (PVD) systems.6,7. Despite high efficiencies, wet synthesis of nanoparticles, however, is made more complicated in multi-element, quaternary and quinary systems such as copper zinc tin sulfoselenide (CZTSSe) and copper indium gallium diselenide (CIGSe). One major disadvantage in these systems is growth of the desired quaternary or quinary phase in competition with unwanted binary and ternary phases with low energy of formation.8,9 Moreover, various reaction parameters such as reaction time, temperature, and choice of ligand also affect, chemical as well as physical properties of resulting nanoparticles. Understanding of the formation mechanisms of the particles is necessary in order to address some of these challenges in wet synthesis of CZTSSe nanoparticles. In this study, we investigate synthesis conditions & reaction parameters which yield high purity Cu2ZnSn(SxSe1-x) 4 nanoparticles as well as attempt to understand the growth mechanism of these nanoparticles. This was achieved by manipulating anion precursor preparation routes as well order in which precursors are introduced into a reaction system. We report a new solution based sulfoselenide preparation route which has been used to synthesize high purity Cu2ZnSn(S xSe1-x)4 nanoparticles. Uniform phase Cu 2ZnSn(SxSe1-x)4 nanoparticles were successfully synthesized over a wide range of varying chalcogen ratios. It was found that anion precursor solution plays a key role in determining the morphology & phase purity of the final nanoparticles, as observed from X-ray Diffraction (XRD) and Raman spectroscopy. A uniform sulfoselenide solution is needed to produce high purity Cu2ZnSn(SxSe1-x )4 nanoparticles with narrow phase distribution. Moreover, the relative reactivity of each anion must be balanced in order to yield uniform phase nanoparticles. The findings of this study as well as the reported mixed chalcogen precursor preparation route can be applied in various industries, including photovoltaics to produce uniform phase, solution processed sulfoselenide nanoparticles.

Stability study: Transparent conducting oxides in chemically reactive plasmas

NASA Astrophysics Data System (ADS)

Manjunatha, Krishna Nama; Paul, Shashi

2017-12-01

Effect of plasma treatment on transparent conductive oxides (TCOs) including indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO) and aluminium-doped zinc oxide (AZO) are discussed. Stability of electrical and optical properties of TCOs, when exposed to plasma species generated from gases such as hydrogen and silane, are studied extensively. ITO and FTO thin films are unstable and reduce to their counterparts such as Indium and Tin when subjected to plasma. On the other hand, AZO is not only stable but also shows superior electrical and optical properties. The stability of AZO makes it suitable for electronic applications, such as solar cells and transistors that are fabricated under plasma environment. TCOs exposed to plasma with different fabrication parameters are used in the fabrication of silicon nanowire solar cells. The performance of solar cells, which is mired by the plasma, fabricated on ITO and FTO is discussed with respect to plasma exposure parameters while showing the advantages of using chemically stable AZO as an ideal TCO for solar cells. Additionally, in-situ diagnostic tool (optical emission spectroscopy) is used to monitor the deposition process and damage caused to TCOs.

Removal of toxic zinc from water/wastewater using eucalyptus seeds activated carbon: non-linear regression analysis.

PubMed

Senthil Kumar, Ponnusamy; Saravanan, Anbalagan; Anish Kumar, Kodyingil; Yashwanth, Ramesh; Visvesh, Sridharan

2016-08-01

In the present study, a novel activated carbon was prepared from low-cost eucalyptus seeds, which was utilised for the effectively removal of toxic zinc from the water/wastewater. The prepared adsorbent was studied by Fourier transform infrared spectroscopy and scanning electron microscopic characterisation studies. Adsorption process was experimentally performed for optimising the influencing factors such as adsorbent dosage, solution pH, contact time, initial zinc concentration, and temperature for the maximum removal of zinc from aqueous solution. Adsorption isotherm of zinc removal was ensued Freundlich model, and the kinetic model ensued pseudo-second order model. Langmuir monolayer adsorption capacity of the adsorbent for zinc removal was evaluated as 80.37 mg/g. The results of the thermodynamic studies suggested that the adsorption process was exothermic, thermodynamically feasible and impulsive process. Finally, a batch adsorber was planned to remove zinc from known volume and known concentration of wastewater using best obeyed model such as Freundlich. The experimental details showed the newly prepared material can be effectively utilised as a cheap material for the adsorption of toxic metal ions from the contaminated water.

40 CFR 437.15 - Pretreatment standards for existing sources (PSES).

Code of Federal Regulations, 2010 CFR

2010-07-01

...) EFFLUENT GUIDELINES AND STANDARDS THE CENTRALIZED WASTE TREATMENT POINT SOURCE CATEGORY Metals Treatment..., cadmium, chromium, cobalt, copper, lead, mercury, nickel, silver, tin, titanium, vanadium, and zinc are...

40 CFR 437.24 - New source performance standards (NSPS).

Code of Federal Regulations, 2010 CFR

2010-07-01

..., TSS, arsenic, cadmium, chromium, cobalt, copper, lead, mercury, tin, zinc, butylbenzyl phthalate, carbazole, n-decane, bis(2-ethylhexyl) phthalate, fluoranthene, and n-octadecane are the same as the...

40 CFR 437.24 - New source performance standards (NSPS).

Code of Federal Regulations, 2011 CFR

2011-07-01

..., TSS, arsenic, cadmium, chromium, cobalt, copper, lead, mercury, tin, zinc, butylbenzyl phthalate, carbazole, n-decane, bis(2-ethylhexyl) phthalate, fluoranthene, and n-octadecane are the same as the...

Molecular solution processing of metal chalcogenide thin film solar cells

NASA Astrophysics Data System (ADS)

Yang, Wenbing

The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum-based techniques and is partially attributed to the ease in controlling composition and CZTS phase through this technique. Based on this platform, comprehensive characterization on CZTS devices is carried out including solar cells and transistors. Especially defects properties are exploited in Chapter 4 targeting to identify the limiting factors for further improvement on CZTS solar cells efficiency. Finally, molecular structures and precursor solution stability have been explored, potentially to provide a universal approach to process multinary compounds.

Low-temperature processed Ga-doped ZnO coatings from colloidal inks.

PubMed

Della Gaspera, Enrico; Bersani, Marco; Cittadini, Michela; Guglielmi, Massimo; Pagani, Diego; Noriega, Rodrigo; Mehra, Saahil; Salleo, Alberto; Martucci, Alessandro

2013-03-06

We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transparent in the visible and absorb in the near-infrared. Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in a mixture of organic amines leads to nanocrystals with tunable properties according to gallium amount. Substitutional Ga(3+) ions trigger a plasmonic resonance in the infrared region resulting from an increase in the free electrons concentration. These nanocrystals can be deposited by spin coating, drop casting, and spray coating resulting in homogeneous and high-quality thin films. The optical transmission of the Ga-ZnO nanoparticle assemblies in the visible is greater than 90%, and at the same time, the near-infrared absorption of the nanocrystals is maintained in the films as well. Several strategies to improve the films electrical and optical properties have been presented, such as UV treatments to remove the organic compounds responsible for the observed interparticle resistance and reducing atmosphere treatments on both colloidal solutions and thin films to increase the free carriers concentration, enhancing electrical conductivity and infrared absorption. The electrical resistance of the nanoparticle assemblies is about 30 kΩ/sq for the as-deposited, UV-exposed films, and it drops down to 300 Ω/sq after annealing in forming gas at 450 °C, comparable with state of the art tin-doped indium oxide coatings deposited from nanocrystal inks.

The application and research status of tin whisker formation in electric usage

NASA Astrophysics Data System (ADS)

Zhao, Heng; Liu, Qing-bin; Lan, Yuan-pei; Wang, Hua; Yao, Da-wei

2017-05-01

`Hair Like' crystalline structure grows from most pure tin or zinc finishes. Usually, the diameter of tin whisker is up to 10 mm and the length of tin whisker is typically 1 µm. In detail, the questions for tin whisker formation are classified into 6 categories: 1. Residual stress with in the tin plating; 2. Intermetallic Formation; 3. Externally Applied Compressive Stress; 4. Bending and Stretching; 5. Scratches and Nicks; 6. Coefficient of Thermal Expansion Mismatches. The result shows that, whisker formation could causes electrical short circuit (High current of whisker melting), debris contamination (Sensitive Optical and Micro Electrical Mechanical System) and metal vapor (Vaporize Damage). Thus, it is suggested that environmental tests and standards (Whisker Shape, Temperature, Pressure, Moisture, Thermal Cycling, and Electrical Field) are required for suppressing whisker formation. Nowadays, the new standards committee of Europe Union acts RoHS (Restriction of certain Hazardous Substances) and WEEE (Waste Electrical and Electronic Equipment) to restrict Pb usage. Thus, new compounds adding to alloys to suppress whiskers are required in electronic application area. In summary, the tin whisker formation is largely influenced by compositions and precipitations.

Cesium recovery from aqueous solutions

DOEpatents

Goodhall, C. A.

1960-09-13

A process for recovering cesium from aqueous solutions is given in which precipitation on zinc ferricyanide is used. The precipitation is preferably carried out in solutions containing at least 0.0004M zinc ferricyanide, an acidity ranging from 0.2N mineral acid to 0.61N acid deficiency, and 1 to 2.5M aluminum nitrate. (D.L.C.)

Occurrences and inventories of heavy metals and brominated flame retardants in wastes from printed circuit board production.

PubMed

Zhou, Xiaoyu; Guo, Jie; Zhang, Wei; Zhou, Peng; Deng, Jingjing; Lin, Kuangfei

2014-09-01

Pollutants including heavy metals and brominated flame retardant were detected in 10 types of production wastes from a typical printed circuit board manufacturing plant, and their inventories were estimated. Rinsing water from etching process had the highest concentrations of copper (665.51 mg/L), lead (1.02 mg/L), nickel (3.60 mg/L), chromium (0.97 mg/L), and tin (1.79 mg/L). Powdered solid waste (SW) from the cut lamination process contained the highest tetrabromobisphenol-A (TBBPA) levels (49.86 mg/kg). Polybrominated diphenyl ethers (PBDEs) were absent in this plant, in agreement with the international regulations of PBDE phase out. The pollutant inventories in the wastes exhibited in the order of copper > > zinc > tin ≈ nickel > lead > chromium > > TBBPA. The potential environmental impact of pollutants in SW during production and disposal were further investigated. A high partitioning of pollutant concentration between the total suspended particle and SW (-0.10 < log K TS < 2.12) was observed for most pollutants, indicating the emission pathway from SW to the airborne atmosphere in the workshop. Although SW met the toxicity characteristic leaching procedure, drilling powder with the smallest particle diameter still showed high leachabilities of lead and tin which may lead to a negative environmental impact during disposal.

Calculating Equilibrium Constants in the SnCl2-H2O-NaOH System According to Potentiometric Titration Data

NASA Astrophysics Data System (ADS)

Maskaeva, L. N.; Fedorova, E. A.; Yusupov, R. A.; Markov, V. F.

2018-05-01

The potentiometric titration of tin chloride SnCl2 is performed in the concentration range of 0.00009-1.1 mol/L with a solution of sodium hydroxide NaOH. According to potentiometric titration data based on modeling equilibria in the SnCl2-H2O-NaOH system, basic equations are generated for the main processes, and instability constants are calculated for the resulting hydroxo complexes and equilibrium constants of low-soluble tin(II) compounds. The data will be of interest for specialists in the field of theory of solutions.

Process for making a noble metal on tin oxide catalyst

NASA Technical Reports Server (NTRS)

Upchurch, Billy T. (Inventor); Davis, Patricia (Inventor); Miller, Irvin M. (Inventor)

1989-01-01

A quantity of reagent grade tin metal or compound, chloride-free, and high-surface-area silica spheres are placed in deionized water, followed by deaerating the mixture by boiling and adding an oxidizing agent, such as nitric acid. The nitric acid oxidizes the tin to metastannic acid which coats the spheres because the acid is absorbed on the substrate. The metastannic acid becomes tin oxide upon drying and calcining. The tin-oxide coated silica spheres are then placed in water and boiled. A chloride-free precious metal compound in aqueous solution is then added to the mixture containing the spheres, and the precious metal compound is reduced to a precious metal by use of a suitable reducing agent such as formic acid. Very beneficial results were obtained using the precious metal compound tetraammine platinum(II) hydroxide.

All-solution processed transparent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

2015-11-01

In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

Mercury removal from aqueous solutions by zinc cementation.

PubMed

Ku, Young; Wu, Ming-Huan; Shen, Yung-Shen

2002-01-01

The main purpose of this research is to study the addition effect of the surfactant and other operating factors on the treatment of wastewater containing mercury ions in aqueous solution by cementation with sacrificing metal, zinc. The removal of mercury ions from aqueous solutions by cementation of zinc powder was found to be a function of solution pH and temperature, amount of zinc, concentration of mercury ion, contact time and the addition of several organic surfactants. Cementation of mercury was shown to be a feasible process to achieve a very high degree of mercury removal over a broad operational range within a fairly reasonable contact time. The reaction rate is approximately first order with respect to the concentration of mercury ion in aqueous solution. Among the surfactants used in this study, only the presence of SDS, an anionic surfactant, slightly enhanced the cementation rate of mercury. The presence of CTAB and Triton-X100 retarded the cementation of mercury by zinc.

40 CFR 60.131 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... containing copper as its predominant constituent, and lesser amounts of zinc, tin, lead, or other metals. (b... heat required in the production of refined brass or bronze. (d) Blast furnace means any furnace used to...

40 CFR 60.131 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... containing copper as its predominant constituent, and lesser amounts of zinc, tin, lead, or other metals. (b... heat required in the production of refined brass or bronze. (d) Blast furnace means any furnace used to...

The Laser-Assisted Field Effect Transistor Gas Sensor Based on Morphological Zinc-Excited Tin-Doped In2O3 Nanowires

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Khosravinejad, Fariba

The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy

Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water,more » carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.« less

Speciation and Characterization of E-Waste, Using Analytical Techniques

NASA Astrophysics Data System (ADS)

López, C. Cortés; Cruz, V. E. Reyes; Rodríguez, M. A. Veloz; Ávila, J. Hernández; Badillo, J. Flores; Murcia, J. A. Cobos

Electronic waste (e-waste), have a high potential as a source of precious metals, since they can contain metals like silver, gold, platinum, copper, zinc, nickel, tin and others. In this paper some e-waste were characterized using several analytical techniques as Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and inductively coupled plasma (ICP) in addition to the thermodynamic study by Pourbaix diagrams of silver (Ag), gold (Au), platinum (Pt), copper (Cu), nickel (Ni), tin (Sn) and zinc (Zn); considering an average low concentration of HNO3 (10% v/v). With results of the characterization was determined that the e-waste is an ideal source for the recovery of valuable metals. Similarly, the thermodynamic studies showed that it is possible to obtain all metallic species except Pt, in a potential window of 1.45V to 2.0V vs SCE.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications.

PubMed

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-17

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

NASA Astrophysics Data System (ADS)

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-01

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Development of zinc-plated regenerator material

NASA Astrophysics Data System (ADS)

Y Xu, M.; Morie, T.; Tsuchiya, A.

2017-12-01

An effective way to improve the efficiency of a cryocooler is to improve the efficiency of the regenerator. In general, the heat capacity of materials decreases as temperature decreases. Thus, when temperature is below 40 K, lead or bismuth spheres are often used as regenerator materials. However, the pressure drop in a sphere regenerator is much larger than that in a screen regenerator. To overcome this dilemma, Xu et al. reported that cooling performance at the temperature of less than 40 K was improved when using tin-plated screens at the cold end of the regenerator. However, the reliability of tin at low temperatures is still not verified fully because of its phase transition from a normal β phase to an abnormal α phase, which may result in a significant reduction of the mechanical strength. In this paper, a zinc-plated screen is proposed as another potential alternative. A comparison test was performed with a two-stage GM cryocooler by replacing part of the first stage regenerator material, phosphorus bronze screens, with zinc-plated screens. Compared to a regenerator filled with bronze screens, the cooling capacity of the first stage increased by about 11% at 40 K and 60% at 30 K with these zinc-plated screens. The detailed experimental results are reported in this paper.

Neurotoxicity of dental amalgam is mediated by zinc.

PubMed

Lobner, D; Asrari, M

2003-03-01

The use of dental amalgam is controversial largely because it contains mercury. We tested whether amalgam caused toxicity in neuronal cultures and whether that toxicity was caused by mercury. In this study, we used cortical cell cultures to show for the first time that amalgam causes nerve cell toxicity in culture. However, the toxicity was not blocked by the mercury chelator, 2,3-dimercaptopropane-1-sulphonate (DMPS), but was blocked by the metal chelator, calcium disodium ethylenediaminetetraacetate (CaEDTA). DMPS was an effective mercury chelator in this system, since it blocked mercury toxicity. Of the components that comprise amalgam (mercury, zinc, tin, copper, and silver), only zinc neurotoxicity was blocked by CaEDTA. These results indicate that amalgam is toxic to nerve cells in culture by releasing zinc. While zinc is known to be neurotoxic, ingestion of zinc is not a major concern because zinc levels in the body are tightly regulated.

Ferrous Analysis.

ERIC Educational Resources Information Center

Straub, William A.

1989-01-01

Elements covered in this review include: aluminum, antimony, arsenic, bismuth, boron, calcium, carbon, chromium, cobalt, copper, hydrogen, iron, lead, magnesium, manganese, molybdenum, nickel, niobium, nitrogen, oxygen, phosphorus, platinum, rare earths, silicons, sulfur, tin, titanium, tungsten, vanadium, zinc, and zirconium. Analytical methods…

40 CFR 437.15 - Pretreatment standards for existing sources (PSES).

Code of Federal Regulations, 2011 CFR

2011-07-01

..., cadmium, chromium, cobalt, copper, lead, mercury, nickel, silver, tin, titanium, vanadium, and zinc are the same as the corresponding limitation specified in § 437.11(a). (b) In-plant standards for cyanide...

Enhanced photoelectrochemical performance and photocatalytic activity of ZnO/TiO2 nanostructures fabricated by an electrostatically modified electrospinning

NASA Astrophysics Data System (ADS)

Ramos, Pierre G.; Flores, Edson; Sánchez, Luis A.; Candal, Roberto J.; Hojamberdiev, Mirabbos; Estrada, Walter; Rodriguez, Juan

2017-12-01

In this work, ZnO/TiO2 nanostructures were fabricated by an electrostatically modified electrospinning technique using zinc acetate and commercially available TiO2-P25, polyvinyl alcohol, and a solvent. The ZnO/TiO2 nanostructures were fabricated on fluorine-doped tin oxide (FTO) glass substrate by electrospinning of aqueous solution containing different amounts of zinc acetate. The TiO2-P25 nanoparticles were immobilized within zinc acetate/PVA nanofibers. The precursor nanofibers obtained were converted into polycrystalline ZnO and ZnO/TiO2 by calcination at 600 °C. The structure and morphology of the obtained nanostructures were characterized by X-ray diffraction and field emission scanning electron microscopy, respectively. It was found that the TiO2-P25 nanoparticles were attached to the ZnO nanostructures, and the mean diameter of the nanoparticles forming the nanostructures ranged from 31 to 52 nm with increasing the amount of zinc acetate. The incident photon-to-current efficiency (IPCE) spectra of the fabricated nanostructures were measured in a three-electrode cell. The photocatalytic activities of ZnO and ZnO/TiO2 nanostructures were evaluated toward the decomposition of methyl orange. The obtained results evidenced that the coupling of TiO2 with ZnO enhanced the IPCE and improved the photocatalytic activity of ZnO. Particularly, the ZnO/TiO2 nanostructures fabricated with a zinc acetate-to-PVA ratio of 2:3 exhibited the highest IPCE and photocatalytic activity.

PROCESSES OF RECLAIMING URANIUM FROM SOLUTIONS

DOEpatents

Zumwalt, L.R.

1959-02-10

A process is described for reclaiming residual enriched uranium from calutron wash solutions containing Fe, Cr, Cu, Ni, and Mn as impurities. The solution is adjusted to a pH of between 2 and 4 and is contacted with a metallic reducing agent, such as iron or zinc, in order to reduce the copper to metal and thereby remove it from the solution. At the same time the uranium present is reduced to the uranous state The solution is then contacted with a precipitate of zinc hydroxide or barium carbonate in order to precipitate and carry uranium, iron, and chromium away from the nickel and manganese ions in the solution. The uranium is then recovered fronm this precipitate.

Tin oxide nanosheet assembly for hydrophobic/hydrophilic coating and cancer sensing.

PubMed

Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi

2012-03-01

Tin oxide nanosheets were crystallized on transparent conductive oxide substrates of fluorine-doped tin oxide in aqueous solutions. The nanosheets had chemical ratio of Sn:O:F = 1:1.85:0.076, suggesting fluorine doping into SnO(2). They were hydrophobic surfaces with contact angle of 140°. They were converted to hydrophilic surfaces with contact angle of below 1° by light irradiation. The simple water process will be applied to surface coating of polymers, metals, biomaterials, papers, etc. Furthermore, the tin oxide nanosheets were modified with dye-labeled monoclonal antibody. Monoclonal antibody reacts with human alpha-fetoprotein in blood serum of hepatocellular cancer patient. Photoluminescence and photocurrent were obtained from the nanosheets under excitation light. Photoelectric conversion was an essence in the sensing system. The tin oxide nanosheets with dye-labeled prostate specific antigen will be used for electrodes of prostate cancer sensors. © 2012 American Chemical Society

Determination of total tin in silicate rocks by graphite furnace atomic absorption spectrometry

USGS Publications Warehouse

Elsheimer, H.N.; Fries, T.L.

1990-01-01

A method is described for the determination of total tin in silicate rocks utilizing a graphite furnace atomic absorption spectrometer with a stabilized-temperature platform furnace and Zeeman-effect background correction. The sample is decomposed by lithium metaborate fusion (3 + 1) in graphite crucibles with the melt being dissolved in 7.5% hydrochloric acid. Tin extractions (4 + 1 or 8 + 1) are executed on portions of the acid solutions using a 4% solution of tricotylphosphine oxide in methyl isobutyl ketone (MIBK). Ascorbic acid is added as a reducing agent prior to extraction. A solution of diammonium hydrogenphosphate and magnesium nitrate is used as a matrix modifier in the graphite furnace determination. The limit of detection is > 10 pg, equivalent to > 1 ??g l-1 of tin in the MIBK solution or 0.2-0.3 ??g g-61 in the rock. The concentration range is linear between 2.5 and 500 ??g l-1 tin in solution. The precision, measured as relative standard deviation, is < 20% at the 2.5 ??g l-1 level and < 7% at the 10-30 ??g l-1 level of tin. Excellent agreement with recommended literature values was found when the method was applied to the international silicate rock standards BCR-1, PCC-1, GSP-1, AGV-1, STM-1, JGb-1 and Mica-Fe. Application was made to the determination of tin in geological core samples with total tin concentrations of the order of 1 ??g g-1 or less.

Controlled atmosphere for fabrication of cermet electrodes

DOEpatents

Ray, Siba P.; Woods, Robert W.

1998-01-01

A process for making an inert electrode composite wherein a metal oxide and a metal are reacted in a gaseous atmosphere at an elevated temperature of at least about 750.degree. C. The metal oxide is at least one of the nickel, iron, tin, zinc and zirconium oxides and the metal is copper, silver, a mixture of copper and silver or a copper-silver alloy. The gaseous atmosphere has an oxygen content that is controlled at about 5-3000 ppm in order to obtain a desired composition in the resulting composite.

Controlled atmosphere for fabrication of cermet electrodes

DOEpatents

Ray, S.P.; Woods, R.W.

1998-08-11

A process is disclosed for making an inert electrode composite wherein a metal oxide and a metal are reacted in a gaseous atmosphere at an elevated temperature of at least about 750 C. The metal oxide is at least one of the nickel, iron, tin, zinc and zirconium oxides and the metal is copper, silver, a mixture of copper and silver or a copper-silver alloy. The gaseous atmosphere has an oxygen content that is controlled at about 5--3000 ppm in order to obtain a desired composition in the resulting composite. 2 figs.

Synthesis of tin (II) oxide from tin (II) oxohydroxide

NASA Astrophysics Data System (ADS)

Kuznetsova, Svetlana; Lisitsa, Konstantin

2017-11-01

Sufficiently limited use of tin (II) oxide is associated with the difficulties of its preparation without impurities of tin (IV) oxide. Understanding the cause of the oxidation process will make it possible to develop methods for obtaining SnO without impurities. The influence of ammonium chloride concentration in the suspension on the oxide composition was investigated. The temperature of oxidation (400 °C) on the air and temperature decomposition in the argon (350 °C) of Sn6O4(OH)4 in the solid phase were determined by the thermal analysis method. The decomposition temperature of the oxyhydroxide in the suspension of ammonium chloride does not exceed 100 °C. An increase in the content of ammonium chloride in an aqueous solution leads to an increase i n the solubility of oxohydroxide and leads to an increase in pH. The suspensions of Sn6O4(OH)4 were subjected to heat treatment on a sand bath and under microwave irradiation. Samples of tin oxide were obtained. The quantitative composition of the mixture of tin oxides was determined. The research also highlights emphasizes that the oxidation of tin (II) to tin (IV) is associated with the dissolved oxygen content in the suspension.

77 FR 22780 - Certain New Chemicals; Receipt and Status Information

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-17

... phenolic- epoxy coating system used to produce a water-immersion lining on concrete and steel. The coating... 06/17/2012 Shepherd Color Company (S) Colored pigment (S) Niobium sulfur tin zinc used. oxide. P-12...

40 CFR 437.26 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2011 CFR

2011-07-01

... Recovery § 437.26 Pretreatment standards for new sources (PSNS). Except as provided in 40 CFR 403.7 or...: Standards for chromium, cobalt, copper, lead, tin, zinc, carbazole, n-decane, bis(2-ethylhexyl) phthalate...

40 CFR 437.26 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2010 CFR

2010-07-01

... Recovery § 437.26 Pretreatment standards for new sources (PSNS). Except as provided in 40 CFR 403.7 or...: Standards for chromium, cobalt, copper, lead, tin, zinc, carbazole, n-decane, bis(2-ethylhexyl) phthalate...

Publications - IC 45 | Alaska Division of Geological & Geophysical Surveys

Science.gov Websites

Surveys Comments: Your help is crucial in the compilation of future Alaska Minerals Reports. The quality ; Production Data; Rocks; Sand and Gravel; Silver; Soapstone; Tin; Zinc Top of Page Department of Natural

Publications - IC 43 | Alaska Division of Geological & Geophysical Surveys

Science.gov Websites

Surveys Comments: Your help is crucial in the compilation of future Alaska Minerals Reports. The quality Assessment; Sand and Gravel; Silver; Soapstone; Soils; Tin; Zinc Top of Page Department of Natural Resources

Preparation and photovoltaic properties of CdS quantum dot-sensitized solar cell based on zinc tin mixed metal oxides.

PubMed

Cao, Jiupeng; Zhao, Yifan; Zhu, Yatong; Yang, Xiaoyu; Shi, Peng; Xiao, Hongdi; Du, Na; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

2017-07-15

The present study reports a new type of quantum dot sensitized solar cells (QDSSCs) using the zinc tin mixed metal oxides (MMO) as the anode materials, which were obtained from the layered double hydroxide (LDH) precursor. The successive ionic layer adsorption and reaction (SILAR) method is applied to deposit CdS quantum dots. The effects of sensitizing cycles on the performance of CdS QDSSC are studied. Scanning electron microscopy (SEM), Transmission electron microscope (TEM) and X-ray diffraction (XRD) are used to identify the surface profile and crystal structure of the mixed metal oxides anode. The photovoltaic performance of the QDSSC is studied by the electrochemical method. The new CdS QDSSC exhibits power conversion efficiency (PCE) up to 0.48% when the anode was sensitized for eight cycles. Copyright © 2017 Elsevier Inc. All rights reserved.

Properties of zinc tin oxide thin film by aerosol assisted chemical vapor deposition (AACVD)

NASA Astrophysics Data System (ADS)

Riza, Muhammad Arif; Rahman, Abu Bakar Abd; Sepeai, Suhaila; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib

2018-05-01

This study focuses on the properties of ZTO which have been deposited by a low-cost method namely aerosol assisted chemical vapor deposition (AACVD). The precursors used in this method were zinc acetate dihidrate and tin chloride dihydrate for ZTO thin film deposition. Both precursors were mixed and stirred until fully dissolved before deposition. The ZTO was deposited on borosilicate glass substrate for the investigation of optical properties. The films deposited have passed the scotch tape adherence test. XRD revealed that the crystal ZTO is slightly in the form of perovskite structure but several deteriorations were also seen in the spectrum. The UV-Vis analysis showed high transmittance of ˜85% and the band gap was calculated to be 3.85 eV. The average thickness of the film is around 284 nm. The results showed that the ZTO thin films have been successfully deposited by the utilization of AACVD method.

Evaluation of the radiopacity of calcium silicate cements containing different radiopacifiers.

PubMed

Camilleri, J; Gandolfi, M G

2010-01-01

To identify the suitable ratio of alternative radiopacifiers to impart the necessary radiopacity to calcium silicate cements (CSC) and assess the purity of the radiopacifying agents. Alternative radiopacifying materials for incorporation into CSC included barium sulphate, titanium oxide, zinc oxide, gold powder and silver/tin alloy. The chemical composition of the alternative radipacifying materials and bismuth oxide, which is used in mineral trioxide aggregate (MTA), was determined using energy dispersive X-ray analysis. In addition, using an aluminium step-wedge and densitometer, the radiopacity of each material was evaluated as recommended by international standards. The optical density was compared with the relevant thickness of aluminium (Al). A commercial MTA and CSC were used as controls. Statistical analysis comparing the radiodensity of the different cements to MTA was performed using anova with P = 0.05 and post hoc Tukey test. All percentage replacements of bismuth oxide, gold and silver-tin alloy powder, and the 25% and 30% replacements with barium sulphate and zinc oxide had radiopacities greater than 3 mm thickness of aluminium (Al) recommended by ISO 6876 (2002). The 25% replacement of cement with gold powder and 20% replacement of cement with silver/tin alloy powder exhibited radiopacity values of 8.04 mm Al and 7.52 mm Al, respectively, similar to MTA (P > 0.05). The cement replaced with 20% bismuth oxide showed a radiopacity of 6.83 mm Al, lower than MTA (P = 0.003). Silver/tin alloy and gold powder imparted the necessary radiopacity to a calcium silicate-based cement. Barium sulphate was also a suitable radiopacifier together with a lower concentration of silver/tin alloy and gold powder that achieved the radiodensity recommended by ISO 6876. Further research is required to investigate the broader properties of the calcium silicate-based cement with the different radiopacifiers.

Process and targets for production of no-carrier-added radiotin

DOEpatents

Srivastava, Suresh C; Zhuikov, Boris Leonidovich; Ermolaev, Stanislav Victorovich; Konyakhin, Nikolay Alexandrovich; Kokhanyuk, Vladimir Mikhailovich; Khamyanov, Stepan Vladimirovich; Togaeva, Natalya Roaldovna

2014-04-22

One embodiment of the present invention includes a process for production and recovery of no-carrier-added radioactive tin (NCA radiotin). An antimony target can be irradiated with a beam of accelerated particles forming NCA radiotin, followed by separation of the NCA radiotin from the irradiated target. The target is metallic Sb in a hermetically sealed shell. The shell can be graphite, molybdenum, or stainless steel. The irradiated target can be removed from the shell by chemical or mechanical means, and dissolved in an acidic solution. Sb can be removed from the dissolved irradiated target by extraction. NCA radiotin can be separated from the remaining Sb and other impurities using chromatography on silica gel sorbent. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

NASA Astrophysics Data System (ADS)

Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

2016-10-01

Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

XRF measurements of tin, copper and zinc in antifouling paints coated on leisure boats.

PubMed

Ytreberg, Erik; Bighiu, Maria Alexandra; Lundgren, Lennart; Eklund, Britta

2016-06-01

Tributyltin (TBT) and other organotin compounds have been restricted for use on leisure boats since 1989 in the EU. Nonetheless, release of TBT is observed from leisure boats during hull maintenance work, such as pressure hosing. In this work, we used a handheld X-ray Fluorescence analyser (XRF) calibrated for antifouling paint matrixes to measure tin, copper and zinc in antifouling paints coated on leisure boats in Sweden. Our results show that over 10% of the leisure boats (n = 686) contain >400 μg/cm(2) of tin in their antifouling coatings. For comparison, one layer (40 μm dry film) of a TBT-paint equals ≈ 800 μg Sn/cm(2). To our knowledge, tin has never been used in other forms than organotin (OT) in antifouling paints. Thus, even though the XRF analysis does not provide any information on the speciation of tin, the high concentrations indicate that these leisure boats still have OT coatings present on their hull. On several leisure boats we performed additional XRF measurements by progressively scraping off the top coatings and analysing each underlying layer. The XRF data show that when tin is detected, it is most likely present in coatings close to the hull with several layers of other coatings on top. Thus, leaching of OT compounds from the hull into the water is presumed to be negligible. The risk for environmental impacts arises during maintenance work such as scraping, blasting and high pressure hosing activities. The data also show that many boat owners apply excessive paint layers when following paint manufacturers recommendations. Moreover, high loads of copper were detected even on boats sailing in freshwater, despite the more than 20 year old ban, which poses an environmental risk that has not been addressed until now. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Zinc titanate sorbents

DOEpatents

Gupta, R.P.; Gangwal, S.K.; Jain, S.C.

1998-02-03

The present invention provides a zinc titanate sorbent material useful in desulfurization applications. The zinc titanate material is in the form of generally spherical particles of substantially uniform chemical distribution. The sorbent material is capable of absorbing sulfur compounds from a gaseous feed in an amount of at least about 15 weight percent based on the weight of the sorbent. The sorbent material is prepared by a process including: (a) forming a zinc oxide/titanium dioxide dry blend, (b) preparing a substantially uniform aqueous slurry comprising the zinc oxide/titanium dioxide dry blend, organic binder, and at least about 1 weight percent inorganic binder based on the solids weight of the slurry, (c) spray drying the slurry to produce substantially spherical particles, and (d) calcining the particles at a temperature of between about 750 to about 950 C. The dry blend is formed by mixing between about 0.5 to about 2 parts zinc oxide having a median particle size of less than about 0.5 microns, and about 1 part titanium dioxide having a median particle size of less than about 1 micron. The slurry contains substantially no free silica and may be prepared by the process including (1) preparing an aqueous solution of organic binder, (2) adding the dry blend to the aqueous solution of organic binder, and (3) adding the inorganic binder to the solution of organic binder, and blend. Additional reagents, such as a surfactant, may also be incorporated into the sorbent material. The present invention also provides a process for desulfurizing a gaseous stream. The process includes passing a gaseous stream through a reactor containing an attrition resistant zinc titanate sorbent material of the present invention.

Zinc titanate sorbents

DOEpatents

Gupta, Raghubir P.; Gangwal, Santosh K.; Jain, Suresh C.

1998-01-01

The present invention provides a zinc titanate sorbent material useful in desulfurization applications. The zinc titanate material is in the form of generally spherical particles of substantially uniform chemical distribution. The sorbent material is capable of absorbing sulfur compounds from a gaseous feed in an amount of at least about 15 weight percent based on the weight of the sorbent. The sorbent material is prepared by a process including: (a) forming a zinc oxide/titanium dioxide dry blend, (b) preparing a substantially uniform aqueous slurry comprising the zinc oxide/titanium dioxide dry blend, organic binder, and at least about 1 weight percent inorganic binder based on the solids weight of the slurry, (c) spray drying the slurry to produce substantially spherical particles, and (d) calcining the particles at a temperature of between about 750.degree. C. to about 950.degree. C. The dry blend is formed by mixing between about 0.5 to about 2 parts zinc oxide having a median particle size of less than about 0.5 .mu., and about 1 part titanium dioxide having a median particle size of less than about 1 .mu.. The slurry contains substantially no free silica and may be prepared by the process including (1) preparing an aqueous solution of organic binder, (2) adding the dry blend to the aqueous solution of organic binder, and (3) adding the inorganic binder to the solution of organic binder, and blend. Additional reagents, such as a surfactant, may also be incorporated into the sorbent material. The present invention also provides a process for desulfurizing a gaseous stream. The process includes passing a gaseous stream through a reactor containing an attrition resistant zinc titanate sorbent material of the present invention.

An enhanced mangiferaindica for dye sensitized solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uno, U. E., E-mail: moses.emetere@covenantuniversity.edu.ng; Emetere, M. E., E-mail: uno-essang@yahoo.co.uk; Fadipe, L. A.

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO{sub 2} conductive. The DSSC fabricated consist of 2.25 cm{sup 2} active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filledmore » with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10{sup −2}, current density (Jsc)=4.07×10{sup −2}, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.« less

Electrochemical synthesis of one-dimensional ZnO nanostructures on ZnO seed layer for DSSC applications

NASA Astrophysics Data System (ADS)

Marimuthu, T.; Anandhan, N.; Thangamuthu, R.

2018-01-01

Electrochemical deposition of vertically aligned zinc oxide (ZnO) nanorods were prepared on ZnO seeded fluorine doped tin oxide (FTO) substrate in the solutions consisting of different concentrations of hexamethylenetetramine (HMTA). The electrochemical, structural, morphological, vibrational and optical properties were characterized by cyclic voltammetry (CV), X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy and photoluminescence (PL) spectroscopy, respectively. CV curves confirm that metallic zinc phase is not deposited as the HMTA concentration is about 9 mM in a deposition solution. XRD patterns of the as-prepared films show that the increasing HMTA concentrations from 0 mM to 9 mM not only increase the formation of zinc hydrate chloride (Zn5(OH)8Cl2·H2O) but also decrease and finally disappear the metallic Zn deposition. After the as-prepared films annealed at 450 ° C, the crystalline phases of Zn and Zn5(OH)8Cl2·H2O are completely converted to ZnO hexagonal wurtzite phase with high intense growth (002) plane orientation. SEM images support that the vertical growth of ZnO nanostructures (nanorods and petals) with a few flowers is found to be in the cordillera structure as the films are deposited in the solutions consisting of 3 mM, 6 mM and 9 mM HMTA respectively. Raman and PL spectra confirm that the ZnO film deposited in the solution consisting of 9 mM HMTA has a higher crystalline nature with lesser atomic defects and is also higher c-axis growth than that of other films deposited in the solutions consisting of 0 mM, 3 mM and 6 mM, respectively. UV-vis absorbance spectra corroborate that the ZnO film deposited in the solution consisting of 9 mM HMTA shows a high dye absorbance as compared with other films. The efficiency of DSSCs based on ZnO photoanodes deposited in the solutions consisting of 0 mM and 9 mM HMTA was 1.79 and 3.75%, respectively. Electrochemical impedance spectra revealed that DSSC based on ZnO photoanode deposited in the solution consisting of 9 mM HMTA has a higher charge recombination resistance (Rrec) than that of another DSSC.

A review on methods of recovery of acid(s) from spent pickle liquor of steel industry.

PubMed

Ghare, N Y; Wani, K S; Patil, V S

2013-04-01

Pickling is the process of removal of oxide layer and rust formed on metal surface. It also removes sand and corrosion products from the surface of metal. Acids such as sulfuric acid, hydrochloric acid are used for pickling. Hydrofluoric acid-Nitric acid mixture is used for stainless steel pickling. Pickling solutions are spent when acid concentration in pickling solutions decreases by 75-85%, which also has metal content up to 150-250 g/ dm3. Spent pickling liquor (SPL) should be dumped because the efficiency of pickling decreases with increasing content of dissolved metal in the bath. The SPL content depends on the plant of origin and the pickling method applied there. SPL from steel pickling in hot-dip galvanizing plants contains zinc(II), iron, traces of lead, chromium. and other heavy metals (max. 500 mg/dm3) and hydrochloric acid. Zinc(II) passes tothe spent solution after dissolution of this metal from zinc(II)-covered racks, chains and baskets used for transportation of galvanized elements. Unevenly covered zinc layers are usually removed in another pickling bath. Due to this, zinc(II) concentration increases even up to 110 g/dm3, while iron content may reach or exceed even 80 g/dm3 in the same solution. This review presents an overview on different aspects of generation and treatment of SPL with recourse to recovery of acid for recycling. Different processes are described in this review and higher weightage is given to membrane processes.

Liquid and Solid Metal Embrittlement.

DTIC Science & Technology

1981-09-05

example, embrittlement of AISI 4140 steel begins at T/T, - 0.75 for cadmium, and 0.85 for lead and tin environments (2). In a few cases, e.g. zinc...has recently proposed, however, that liquid zinc can penetrate to very near the tip of a sharp crack in 4140 steel, based upon both direct observation...long could be detected, was observed in delayed failure experi- ments on unnotched 4140 steel, in the quenched and tempered condi- tion, embrittled by

Experiments On Transparent Conductive Films For Spacecraft

NASA Technical Reports Server (NTRS)

Perez-Davis, Marla E.; Rutledge, Sharon K.; De Groh, Kim K.; Hung, Ching-Cheh; Malave-Sanabria, Tania; Hambourger, Paul; Roig, David

1995-01-01

Report describes experiments on thin, transparent, electrically conductive films made, variously, of indium tin oxide covered by magnesium fluoride (ITO/MgF2), aluminum-doped zinc oxide (AZO), or pure zinc oxide (ZnO). Films are candidates for application to such spacecraft components, including various optoelectronic devices and window surfaces that must be protected against buildup of static electric charge. On Earth, such films useful on heat mirrors, optoelectronic devices, gas sensors, and automotive and aircraft windows.

An Improved Process for Precipitating Cyanide Ions from the Barren Solution at Different pHs

NASA Astrophysics Data System (ADS)

Figueroa, Gabriela V.; Parga, José R.; Valenzuela, Jesus L.; Vázquez, Victor; Valenzuela, Alejandro; Rodriguez, Mario

2016-02-01

In recent decades, the use of metal sulfides instead of hydroxide precipitation in hydrometallurgical processes has gained prominence. Some arguments for its preferential use are as follows: a high degree of metal removal at relatively low pH values, the sparingly soluble nature of sulfide precipitates, favorable dewatering characteristics, and the stability of the formed metal sulfides. The Merrill-Crowe zinc-precipitation process has been applied worldwide in a large number of operations for the recovery of gold and silver from cyanide solutions. However, in some larger plants, the quality of this precious precipitate is low because copper, zinc and especially lead are precipitated along with gold and silver. This results in higher consumption of zinc dust and flux during the smelting of the precipitate, the formation of the matte, and a shorter crucible life. The results show that pH has a significant effect on the removal efficiency of zinc and copper cyanide ions. The optimal pH range was determined to be 3-4, and the removal efficiency of zinc and copper cyanide ions was up to 99%.

The interaction of zinc oxide-based dental cements with aqueous solutions of potassium fluoride.

PubMed

Pawluk, K; Booth, S E; Coleman, N J; Nicholson, J W

2008-09-01

The ability of zinc oxide-based dental cements (zinc phosphate and zinc polycarboxylate) to take up fluoride from aqueous solution has been studied. Only zinc phosphate cement was found to take up any measurable fluoride after 5 h exposure to the solutions. The zinc oxide filler of the zinc phosphate also failed to take up fluoride from solution. The key interaction for this uptake was thus shown to involve the phosphate groups of the set cement. However, whether this took the form of phosphate/fluoride exchange, or the formation of oxyfluoro-phosphate groups was not clear. Fluoride uptake followed radicaltime kinetics for about 2 h in some cases, but was generally better modelled by the Elovich equation, dq(t)/dt = alpha exp(-betaq(t)). Values for alpha varied from 3.80 to 2.48 x 10(4), and for beta from 7.19 x 10(-3) to 0.1946, though only beta showed any sort of trend, becoming smaller with increasing fluoride concentration. Fluoride was released from the zinc phosphate cements in processes that were diffusion based up to M(t)/M(infinity) of about 0.4. No further release occurred when specimens were placed in fresh volumes of deionised water. Only a fraction of the fluoride taken up was re-released, demonstrating that most of the fluoride taken up becomes irreversibly bound within the cement.

Novel Materials, Processing and Device Technologies for Space Exploration with Potential Dual-Use Applications

NASA Technical Reports Server (NTRS)

Hepp, A. F.; Bailey, S. G.; McNatt, J. S.; Chandrashekhar, M. V. S.; Harris, J. D.; Rusch, A. W.; Nogales, K. A.; Goettsche, K.V.; Hanson, W.; Amos, D.;

Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

NASA Technical Reports Server (NTRS)

Hepp, A. F.; Bailey, S. G.; McNatt, J. S.; Chandrashekhar, M. V. S.; Harris, J. D.; Rusch, A. W.; Nogales, K. A.; Goettsche, K. V.; Hanson, W.; Amos, D.;

PHOTOCROSSLINKED IMMOBILIZATION OF POLYELECTROLYTES FOR TEMPLATE ASSISTED ENZYMATIC POLYMERIZATION OF CONJUGATED POLYMERS

EPA Science Inventory

Growing demand in consumer electronics raises need for efficient, affordable, environmentally benign and biodegradable substitutes for current technologies. Printed circuit boards contain heavy metals such as antimony, silver, chromium, zinc, lead, tin and copper. According t...

40 CFR 437.16 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2011 CFR

2011-07-01

..., tin, titanium, vanadium, and zinc are the same as the corresponding limitation specified in § 437.11(a) (b) In-plant standards for cyanide are the same as the limitations specified in § 437.11(b). [65 FR...

Synthesis and Characterization of Phase-pure Copper Zinc Tin Sulfide (Cu2ZnSnS4) Nanoparticles

NASA Astrophysics Data System (ADS)

Monahan, Bradley Michael

Semiconductor nanoparticles have been an important area of research in many different disciplines. A substantial amount of this work has been put toward advancing the field of photovoltaics. However, current p-type photovoltaic materials can not sustain the large scale production needed for future energy demands due to their low elemental abundance. Therefore, Earth abundant semiconductor materials have become of great interest to the photovoltaic community especially, the material copper zinc tin sulfide (CZTS), also known by its mineral name kesterite. CZTS exhibits desirable properties for photovoltaics, such as elemental abundance, high absorption coefficient (~104 cm-1 ), high carrier concentration, and optimum direct band gap (1.5 eV). To date, solution based approaches for making CZTS have yielded the most promising conversion efficiencies in solar cells. To that end, the motivation of nanoparticle based inks that can be used in high throughput production are an attractive route for large scale deployment. This has driven the need to make high quality CZTS nanoparticles that possess the properties of the pure kesterite phase with high monodispersity that can be deposited into dense thin films. The inherent challenge of making a quaternary compound of a single phase has made this a difficult task; however, some of those fundamental problems are addressed in this thesis. This had resulted in the synthesis of phase-pure k-CZTS confirmed by powder X-ray diffraction, Raman spectroscopy, UV-visible absorption spectroscopy and energy dispersive x-ray spectroscopy. Furthermore, ultra-fast laser spectroscopy was done on CZTS thin films made from phase-pure kesterite nanoparticles synthesized in this work. This thesis provides new data that directly probes the lifetime of photogenerated free carriers in kesterite CZTS (k-CZTS) thin films.

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE PAGES

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.; ...

2017-09-27

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

Ammonium removal pathways and microbial community in GAC-sand dual media filter in drinking water treatment.

PubMed

Feng, Shuo; Xie, Shuguang; Zhang, Xiaojian; Yang, Zhiyu; Ding, Wei; Liao, Xiaobin; Liu, Yuanyuan; Chen, Chao

2012-01-01

A GAC-sand dual media filter (GSF) was devised as an alternative solution for drinking water treatment plant to tackle the raw water polluted by ammonium in place of expensive ozone-GAC processes or bio-pretreatments. The ammonium removal pathways and microbial community in the GSFs were investigated. The concentrations of ammonium, nitrite and nitrate nitrogen were monitored along the filter. Total inorganic nitrogen (TIN) loss occurred during the filtration. For 1 mg ammonium removal, the TIN loss was as high as 0.35 mg, DO consumption was 3.06 mg, and alkalinity consumption was 5.55 mg. It was assumed that both nitrification and denitrification processes occur in the filters to fit the TIN loss and low DO consumption. During the filtration, nitritation, nitrification and nitritation-anaerobic ammonium oxidation processes probably occur, while traditional nitrification and denitrification and simultaneous nitrification and denitrification processes may occur. In the GSFs, Nitrosomonas and Nitrospira are likely to be involved in nitrification processes, while Novosphingobium, Comamonadaceae and Oxalobacteraceae may be involved in denitrification processes.

In vitro corrosion behaviour and microhardness of high-copper amalgams with platinum and indium.

PubMed

Ilikli, B G; Aydin, A; Işimer, A; Alpaslan, G

1999-02-01

Samples prepared from Luxalloy, GS-80, Permite-C and Logic and polished after 24 h by traditional methods were stored in polypropylene tubes containing phosphate-buffered saline solutions (pH 3.5 and 6.5) and distilled water. The amounts of mercury, silver, tin, copper, zinc, platinum and indium in the test solutions were determined at the first, second, eighth, 52nd and 78th week by atomic absorption spectrometry. At the end of the eighth week the amalgam samples were removed from solutions and evaluated by Rockwell Super Scial Microhardness tester. Statistically significant low amounts of metal ions were measured for Permite-C containing indium and Logic containing platinum. The microhardness test results showed that there were statistically significant increases in the microhardness of Permite-C and Logic. As a result it was shown that the amalgam samples were affected from corrosion conditions to different degrees. Sample of the Logic group that was stored in distilled water, showed smoother surface properties than other amalgam samples containing high copper. However, it was observed that samples of Permite-C group had the smoothest surface properties.

Flow studies for recycling metal commodities in the United States [Chapters A-M : gold, platinum, chromium, zinc, magnesium, lead, iron, manganese, columbium (niobium), tantalum, tin, molybdenum, and cobalt

USGS Publications Warehouse

Sibley, Scott F.

2004-01-01

USGS Circular 1196, 'Flow Studies for Recycling Metal Commodities in the United States,' presents the results of flow studies for recycling 26 metal commodities, from aluminum to zinc. These metals are a key component of the U.S. economy. Overall, recycling accounts for more than half of the U.S. metal supply by weight and roughly 40 percent by value.

Polyethylene glycol assisted growth of Sn-doped ZnO nanorod arrays prepared via sol-gel immersion method

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Tin-doped zinc oxide (SZO) nanorod films at different concentrations of polyethylene glycol (PEG) were successfully deposited on zinc oxide (ZnO) seeded layer catalyst using sol-gel immersion method. The morphology of the samples were characterized using field emission scanning electron microscopy (FESEM), optical properties using UV-Vis spectrophotometer and electrical properties using I-V measurement system. The current-voltage (I-V) characteristics displayed that 5 wt % sample produced the highest conductivity.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Synthesis of Ferrite Nickel Nano-particles and Its Role as a p-Dopant in the Improvement of Hole Injection of an Organic Light-Emitting Diode

NASA Astrophysics Data System (ADS)

Noori, Maryam; Jafari, Mohammad Reza; Hosseini, Sayed Mohsen; Shahedi, Zahra

2017-07-01

We fabricated an organometallic complex based on zinc ions using zinc complex as a fluorescent in organic light-emitting diodes (OLEDs). Also, the nano-particles of ferrite nickel were produced in a simple aqueous system prepared by mixing Ni (NO3)2, Fe (NO3)3 and deionized water solutions. The synthesized zinc bis (8-hydroxyquinoline) (Znq2) complex and NiFe2O4 nano-particles were characterized by using x-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Fourier transform infrared spectroscopy (FT-IR) as well as photoluminescence spectroscopy analysis. Their energy level was also determined by some cyclic voltammetry (CV) measurements. The maximum green photoluminescence was observed at 565 nm. The nano-particles of ferrite nickel were utilized in preparation of OLEDs by blending of the magnetic nano-particles with PEDOT:PSS and Zn-complex solutions. The electrical and optical performance of prepared OLEDs with/without doped nano-particle was studied. The samples were configured into two structures: (1) Indium Tin Oxide (ITO)/ poly(3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/Znq2/(2-4-biphenylyl)-5-phenyl-oxadiazole (PBD)/aluminum (Al) and (2) ITO/PEDOT:PSS:NiFe2O4(NPs)/Znq2/PBD/Al. Obtained results showed that the current density and electroluminescence efficiency were increased and the turn-on voltage decreased (about 3 V) by using nano-particles into a PEDOT:PSS layer (Hole transport layer). Also, the electroluminescence efficiency was decreased by incorporating magnetic nano-particles into a Zn-complex layer (emissive layer). It was found that utilizing NiFe2O4 nano-particles caused an increase of hole-injection layer conductivity effectively and a decrease of the turn-on voltage.

WILDERNESSES AND ROADLESS AREAS IN WHITE MOUNTAIN NATIONAL FOREST NEW HAMPSHIRE.

USGS Publications Warehouse

Moench, Robert H.; Gazdik, Gertrude C.

1984-01-01

On the basis of a mineral survey, a geologic terrane in north-central New Hampshire having an area of at least 300 sq mi has probable potential for the occurrence of tin resources. This terrane covers all of the Sandwich Range Roadless Area, approximately the eastern two thirds of the Pemigewasset Roadless Area, a large part of the Presidential Range-Dry River Wilderness, and the southern part of the Dry River Extension Roadless Area. If major tin deposits occur in New Hampshire, they are probably associated with the Mesozoic Conway Granite. Tin resources in the New Hampshire terrane may also occur in small but high-grade veins, as at the old Jackson tin mine; and in iron-beryllium deposits that are low grade with respect to tin but richer in iron, beryllium, lead, zinc, and silver, as at the old Iron Mountain mine. The resource potential for uranium, tungsten, and niobium in the same and other parts of the area investigated cannot be evaluated frpm present data. The nature of the geologic terrain indicates little likelihood of the occurrence of organic fuels.

Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

2018-04-01

We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

Substrate Selection for Fundamental Studies of Electrocatalysts and Photoelectrodes: Inert Potential Windows in Acidic, Neutral, and Basic Electrolyte

PubMed Central

Gorlin, Yelena; Jaramillo, Thomas F.

2014-01-01

The selection of an appropriate substrate is an important initial step for many studies of electrochemically active materials. In order to help researchers with the substrate selection process, we employ a consistent experimental methodology to evaluate the electrochemical reactivity and stability of seven potential substrate materials for electrocatalyst and photoelectrode evaluation. Using cyclic voltammetry with a progressively increased scan range, we characterize three transparent conducting oxides (indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide) and four opaque conductors (gold, stainless steel 304, glassy carbon, and highly oriented pyrolytic graphite) in three different electrolytes (sulfuric acid, sodium acetate, and sodium hydroxide). We determine the inert potential window for each substrate/electrolyte combination and make recommendations about which materials may be most suitable for application under different experimental conditions. Furthermore, the testing methodology provides a framework for other researchers to evaluate and report the baseline activity of other substrates of interest to the broader community. PMID:25357131

Substrate Selection for Fundamental Studies of Electrocatalysts and Photoelectrodes: Inert Potential Windows in Acidic, Neutral, and Basic Electrolyte

DOE PAGES

Benck, Jesse D.; Pinaud, Blaise A.; Gorlin, Yelena; ...

2014-10-30

The selection of an appropriate substrate is an important initial step for many studies of electrochemically active materials. In order to help researchers with the substrate selection process, we employ a consistent experimental methodology to evaluate the electrochemical reactivity and stability of seven potential substrate materials for electrocatalyst and photoelectrode evaluation. Using cyclic voltammetry with a progressively increased scan range, we characterize three transparent conducting oxides (indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide) and four opaque conductors (gold, stainless steel 304, glassy carbon, and highly oriented pyrolytic graphite) in three different electrolytes (sulfuric acid, sodium acetate, andmore » sodium hydroxide). Here, we determine the inert potential window for each substrate/electrolyte combination and make recommendations about which materials may be most suitable for application under different experimental conditions. Furthermore, the testing methodology provides a framework for other researchers to evaluate and report the baseline activity of other substrates of interest to the broader community.« less

Heat transfer capability of solar radiation in colored roof and influence on room thermal comfort

NASA Astrophysics Data System (ADS)

Syuhada, Ahmad; Maulana, Muhammad Ilham

2018-02-01

Colored zinc is the most widely used by people in Indonesia as the roof of the building. Each color has different heat absorption capability, the higher the absorption capacity of a roof will cause high room temperature. A high temperature in the room will cause the room is not thermally comfortable for activity. Lack of public knowledge about the ability of each color to absorb heat can cause errors in choosing the color of the roof of the building so that it becomes uncomfortable regarding thermal comfort. This study examined how big the ability of each color in influencing the heat absorption on the roof of the zinc. The purpose of this study is to examine which colors are the lowest to absorb radiation heat. This research used theexperimental method. Data collected by measuring the temperature of the environment above and below the colored tin roof, starting at 11:00 am until 15:00 pm. The zinc roofs tested in this study are zinc black, red zinc, green zinc, blue zinc, brown zinc, maroon zinc, orange zinc, zinc gray, zinc color chrome and zinc white color. The study results show that black and blackish colors will absorb more heat than other colors. While the color white or close to whitish color will absorb a slight heat.

Lithiation-induced zinc clustering of Zn 3, Zn 12, and Zn 18 units in Zintl-like Ca ~30Li 3+xZn 60-x (x=0.44-1.38)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Qisheng

2014-11-14

Zinc clusters are not common for binary intermetallics with relatively low zinc content, but this work shows that zinc clustering can be triggered by lithiation, as exemplified by Ca ~30Li 3+xZn 60-x, P6/mmm, Z = 1, which can be directly converted from CaZn 2. Two end members of the solid solution (x = 0.44 and 1.38) were established and structurally characterized by single-crystal X-ray diffraction analyses: Ca 30Li 3.44(6)Zn59.56(6), a = 15.4651(9) Å, c = 9.3898(3) Å; Ca 30.45(2)Li 4.38(6)Zn 58.62(6), a = 15.524(3) Å, c = 9.413(2) Å. The structures of Ca ~30Li 3+xZn 60-x feature a condensed anionicmore » network of Zn3 triangles, lithium-centered Zn12 icosahedra, and arachno-(Zn,Li)18 tubular clusters that are surrounded respectively by Ca 14, Ca 20, and Ca 30 polyhedra. These polyhedra share faces and form a clathrate-like cationic framework. The specific occupation of lithium in the structure is consistent with theoretical “coloring” analyses. Analysis by the linear muffin-tin orbital (LMTO) method within the atomic sphere approximation reveals that Ca ~30Li 3+xZn 60-x is a metallic, Zintl-like phase with an open-shell electronic structure. The contribution of Ca–Zn polar covalent interactions is about 41%.« less

Characteristics of TiO2/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

NASA Astrophysics Data System (ADS)

Rahman, Rohanieza Abdul; Zulkefle, Muhammad Al Hadi; Abdullah, Wan Fazlida Hanim; Rusop, M.; Herman, Sukreen Hana

2016-07-01

In this study, titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO2/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO2/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

Characteristics of TiO{sub 2}/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, Rohanieza Abdul, E-mail: rohanieza.abdrahman@gmail.com; Zulkefle, Muhammad Al Hadi, E-mail: alhadizulkefle@gmail.com; Abdullah, Wan Fazlida Hanim, E-mail: wanfaz@salam.uitm.edu.my

In this study, titanium dioxide (TiO{sub 2}) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO{sub 2}/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V)more » biasing interfacing circuit. TiO{sub 2}/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.« less

Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

DOEpatents

Giolando, Dean M.

2003-09-30

Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

2017-09-01

This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

Composition of coarse-grained magnetite from pegmatite dikes related to plutons of quartz monzonite in the Jabal Lababa area, Kingdom of Saudi Arabia

USGS Publications Warehouse

Overstreet, William C.; Mousa, Hassan; Matzko, John J.

1985-01-01

Crystals of magnetite as large as 30 mm long and 7 mm thick are locally present in quartz-rich zones of interior and exterior pegmatite dikes related to plutons of quartz monzonite in the Jabal Lababa area. Niobium, tin, and yttrium are strongly enriched in six specimens of magnetite from interior pegmatite dikes in a small pluton where these elements form geochemical anomalies in nonmagnetic heavy-mineral concentrates from wadi sediment. Less abundant anomalous elements in the magnetite are molybdenum, lead, and zirconium, which also tend to be present in anomalous amounts in the nonmagnetic concentrates from the niobium-bearing pluton. The most anomalous trace element in the magnetite is zinc, which is at least 10 times as abundant as it is in the quartz monzonite plutons or in the nonmagnetic concentrates. The capacity of magnetite to scavenge molybdenum, zinc, niobium, lead, tin, yttrium, and zirconium suggests the possible utility of magnetite as a geochemical sample medium.

Hemimorphite Ores: A Review of Processing Technologies for Zinc Extraction

NASA Astrophysics Data System (ADS)

Chen, Ailiang; Li, Mengchun; Qian, Zhen; Ma, Yutian; Che, Jianyong; Ma, Yalin

2016-10-01

With the gradual depletion of zinc sulfide ores, exploration of zinc oxide ores is becoming more and more important. Hemimorphite is a major zinc oxide ore, attracting much attention in the field of zinc metallurgy although it is not the major zinc mineral. This paper presents a critical review of the treatment for extraction of zinc with emphasis on flotation, pyrometallurgical and hydrometallurgical methods based on the properties of hemimorphite. The three-dimensional framework structure of hemimorphite with complex linkage of its structural units lead to difficult desilicification before extracting zinc in the many metallurgical technologies. It is found that the flotation method is generally effective in enriching zinc minerals from hemimorphite ores into a high-grade concentrate for recovery of zinc. Pure zinc can be produced from hemimorphite or/and willemite with a reducing reagent, like methane or carbon. Leaching reagents, such as acid and alkali, can break the complex structure of hemimorphite to release zinc in the leached solution without generation of silica gel in the hydrometallurgical process. For optimal zinc extraction, combing flotation with pyrometallurgical or hydrometallurgical methods may be required.

[Leaching of nonferrous metals from copper-smelting slag with acidophilic microorganisms].

PubMed

Murav'ev, M I; Fomchenko, N V

2013-01-01

The leaching process of copper and zinc from copper converter slag with sulphuric solutions of trivalent iron sulphate obtained using the association of acidophilic chemolithotrophic microorganisms was investigated. The best parameters of chemical leaching (temperature 70 degrees C, an initial concentration of trivalent iron in the leaching solution of 10.1 g/L, and a solid-phase content in the suspension of 10%) were selected. Carrying out the process under these parameters resulted in the recovery of 89.4% of copper and 39.3% of zinc in the solution. The possibility of the bioregeneration of trivalent iron in the solution obtained after the chemical leaching of slag by iron-oxidizingacidophilic chemolithotrophic microorganisms without inhibiting their activity was demonstrated.

Process for strontium-82 separation

DOEpatents

Heaton, Richard C.; Jamriska, Sr., David J.; Taylor, Wayne A.

1992-01-01

A process for selective separation of strontium-82 and strontium-85 from proton irradiated molybdenum targets comprises dissolving the molybdenum target in a hydrogen peroxide solution to form a first solution containing ions selected from a group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium, rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, and yttrium; passing the solution through a first cationic resin whereby ions selected from a group consisting of zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium a portion of zirconium and a portion of rubidium are selectively absorbed by the first resin; contacting the first resin with an acid solution to strip and remove the absorbed ions from the first cationic exchange resin to form a second solution; evaporating the second solution for a time sufficient to remove substantially all of the acid and water from the solution whereby a residue remains; dissolving the residue in a dilute acid to form a third solution; passing the third solution through a second cationic resin whereby the ions are absorbed by the second resin; contacting the second resin with a dilute sulfuric acid solution whereby the absorbed ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium and zirconium are selectively removed from the second resin; and contacting the second resin with a dilute acid solution whereby the absorbed strontium ions are selectively removed.

Process for strontium-82 separation

DOEpatents

Heaton, R.C.; Jamriska, D.J. Sr.; Taylor, W.A.

1992-12-01

A process for selective separation of strontium-82 and strontium-85 from proton irradiated molybdenum targets comprises dissolving the molybdenum target in a hydrogen peroxide solution to form a first solution containing ions selected from a group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium, rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, and yttrium; passing the solution through a first cationic resin whereby ions selected from a group consisting of zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium a portion of zirconium and a portion of rubidium are selectively absorbed by the first resin; contacting the first resin with an acid solution to strip and remove the absorbed ions from the first cationic exchange resin to form a second solution; evaporating the second solution for a time sufficient to remove substantially all of the acid and water from the solution whereby a residue remains; dissolving the residue in a dilute acid to form a third solution; passing the third solution through a second cationic resin whereby the ions are absorbed by the second resin; contacting the second resin with a dilute sulfuric acid solution whereby the absorbed ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium and zirconium are selectively removed from the second resin; and contacting the second resin with a dilute acid solution whereby the absorbed strontium ions are selectively removed. 1 fig.

Metallic biomaterials TiN-coated: corrosion analysis and biocompatibility.

PubMed

Paschoal, André Luís; Vanâncio, Everaldo Carlos; Canale, Lauralice de Campos Franceschini; da Silva, Orivaldo Lopes; Huerta-Vilca, Domingos; Motheo, Artur de Jesus

2003-05-01

Corrosion processes due to contact with the physiological environment should be avoided or minimized in orthopedic implants. Four metallic substrates frequently used as biomaterials: pure Ti, Ti-6Al-4V alloy, ASTM F138 stainless steel, and Co-Cr-Mo alloy, were coated with TiN using the physical vapor deposition (PVD) technique. These coatings have been screened by polarization curves in physiological solutions. TiN prepared by PVD is efficient as coating for stainless steel. On titanium and alloy there are no benefits concerning the corrosion resistance compared to the bare Ti-materials. TiN coatings have been screened according to ISO 10993 standard tests for biocompatibility and exhibited no cytotoxicity, dermal irritation, or acute systemic toxicity response.

Materials flow of indium in the United States in 2008 and 2009

USGS Publications Warehouse

Goonan, Thomas G.

2012-01-01

Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.

PubMed

Filipovic, Lado; Selberherr, Siegfried

2015-03-25

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250°C and 550°C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed.

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

PubMed Central

Filipovic, Lado; Selberherr, Siegfried

2015-01-01

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250 °C and 550 °C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed. PMID:25815445

Fabrication of TiN nanorods by electrospinning and their electrochemical properties

NASA Astrophysics Data System (ADS)

Sun, Dongfei; Lang, Junwei; Yan, Xingbin; Hu, Litian; Xue, Qunji

2011-05-01

TiN nanorods were synthesized using electrospinning technique followed by thermolysis in different atmospheres. A dimethyl formamide-ethanol solution of poly-(vinyl pyrrolidone) and Ti (IV)-isopropoxide was used as the electrospinning precursor solution and as-spun nanofibers were calcined at 500 °C in air to generate TiO 2 nanofibers. Subsequently, a conversion from TiO 2 nanofibers to TiN nanorods was employed by the nitridation treatment at 600˜1400 °C in ammonia atmosphere. A typical characteristic of the final products was that the pristine nanofibers were cut into nanorods. The conversion from TiO 2 to TiN was realized when the nitridation temperature was above 800 °C. As-prepared nanorods were composed of TiN nano-crystallites and the average crystallite size gradually increased with the increase of the nitridation temperature. Electrochemical properties of TiN nanorods showed strong dependence on the nitridation temperature. The maximum value of the specific capacitance was obtained from the TiN nanorods prepared at 800 °C.

Decomposition Mechanism and Decomposition Promoting Factors of Waste Hard Metal for Zinc Decomposition Process (ZDP)

NASA Astrophysics Data System (ADS)

Pee, J. H.; Kim, Y. J.; Kim, J. Y.; Seong, N. E.; Cho, W. S.; Kim, K. J.

2011-10-01

Decomposition promoting factors and decomposition mechanism in the zinc decomposition process of waste hard metals which are composed mostly of tungsten carbide and cobalt were evaluated. Zinc volatility amount was suppressed and zinc steam pressure was produced in the reaction graphite crucible inside an electric furnace for ZDP. Reaction was done for 2 hrs at 650 °C, which 100 % decomposed the waste hard metals that were over 30 mm thick. As for the separation-decomposition of waste hard metals, zinc melted alloy formed a liquid composed of a mixture of γ-β1 phase from the cobalt binder layer (reaction interface). The volume of reacted zone was expanded and the waste hard metal layer was decomposed-separated horizontally from the hard metal. Zinc used in the ZDP process was almost completely removed-collected by decantation and volatilization-collection process at 1000 °C. The small amount of zinc remaining in the tungsten carbide-cobalt powder which was completely decomposed was fully removed by using phosphate solution which had a slow cobalt dissolution speed.

Process for preparing improved silvered glass mirrors

DOEpatents

Buckwalter, Jr., Charles Q.

1981-01-01

Glass mirrors having improved weathering properties are prepared by an improvement in the process for making the mirrors. The glass surface after it has been cleaned but before it is silvered, is contacted with a solution of lanthanide rare earths in addition to a sensitization solution of tin or palladium. The addition of the rare earths produces a mirror which has increased resistance to delamination of the silver from the glass surface in the presence of water.

Process for preparing improved silvered glass mirrors

DOEpatents

Buckwalter, C.Q. Jr.

1980-01-28

Glass mirrors having improved weathering properties are prepared by an improvement in the process for making the mirrors. The glass surface after it has been cleaned but before it is silvered, is contacted with a solution of lanthanide rare earths in addition to a sensitization solution of tin or palladium. The addition of the rare earths produces a mirror which has increased resistance to delamination of the silver from the glass surface in the presence of water.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com; Mummoorthi, M.

Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

Acidic leaching both of zinc and iron from basic oxygen furnace sludge.

PubMed

Trung, Zuzana Hoang; Kukurugya, Frantisek; Takacova, Zita; Orac, Dusan; Laubertova, Martina; Miskufova, Andrea; Havlik, Tomas

2011-09-15

During the steel production in the basic oxygen furnace (BOF), approximately 7-15 kg of dust per tonne of produced steel is generated. This dust contains approximately 1.4-3.2% Zn and 54-70% Fe. Regarding the zinc content, the BOF dust is considered to be highly problematic, and therefore new technological processes for recycling dusts and sludge from metallurgical production are still searched for. In this study the hydrometallurgical processing of BOF sludge in the sulphuric acid solutions under atmospheric pressure and temperatures up to 100 °C is investigated on laboratory scale. The influence of sulphuric acid concentration, temperature, time and liquid to solid ratio (L:S) on the leaching process was studied. The main aim of this study was to determine optimal conditions when the maximum amount of zinc passes into the solution whilst iron remains in a solid residue. Copyright © 2011 Elsevier B.V. All rights reserved.

Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

NASA Astrophysics Data System (ADS)

Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

2017-10-01

Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

Electrochemical synthesis and characterization of zinc oxalate nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com; Roushani, Mahmoud; Department of Chemistry, Ilam University, Ilam

2013-03-15

Highlights: ► Synthesis of zinc oxalate nanoparticles via electrolysis of a zinc plate anode in sodium oxalate solutions. ► Design of a Taguchi orthogonal array to identify the optimal experimental conditions. ► Controlling the size and shape of particles via applied voltage and oxalate concentration. ► Characterization of zinc oxalate nanoparticles by SEM, UV–vis, FT-IR and TG–DTA. - Abstract: A rapid, clean and simple electrodeposition method was designed for the synthesis of zinc oxalate nanoparticles. Zinc oxalate nanoparticles in different size and shapes were electrodeposited by electrolysis of a zinc plate anode in sodium oxalate aqueous solutions. It was foundmore » that the size and shape of the product could be tuned by electrolysis voltage, oxalate ion concentration, and stirring rate of electrolyte solution. A Taguchi orthogonal array design was designed to identify the optimal experimental conditions. The morphological characterization of the product was carried out by scanning electron microscopy. UV–vis and FT-IR spectroscopies were also used to characterize the electrodeposited nanoparticles. The TG–DTA studies of the nanoparticles indicated that the main thermal degradation occurs in two steps over a temperature range of 350–430 °C. In contrast to the existing methods, the present study describes a process which can be easily scaled up for the production of nano-sized zinc oxalate powder.« less

Reductive precipitation of metals photosensitized by tin and antimony porphyrins

DOEpatents

Shelnutt, John A.; Gong, Weiliang; Abdelouas, Abdesselam; Lutze, Werner

2003-09-30

A method for reducing metals using a tin or antimony porphyrin by forming an aqueous solution of a tin or antimony porphyrin, an electron donor, such as ethylenediaminetetraaceticacid, triethylamine, triethanolamine, and sodium nitrite, and at least one metal compound selected from a uranium-containing compound, a mercury-containing compound, a copper-containing compound, a lead-containing compound, a gold-containing compound, a silver-containing compound, and a platinum-containing compound through irradiating the aqueous solution with light.

LiGe(SiMe₃)₃: A New Substituent for the Synthesis of Metalloid Tin Clusters from Metastable Sn(I) Halide Solutions.

PubMed

Binder, Mareike; Schrenk, Claudio; Block, Theresa; Pöttgen, Rainer; Schnepf, Andreas

2018-04-26

The most fruitful synthetic route to metalloid tin clusters applies the disproportionation reaction of metastable Sn(I) halide solutions, whereby Si(SiMe₃)₃ is mostly used as the stabilizing substituent. Here, we describe the synthesis and application of the slightly modified substituent Ge(SiMe₃)₃, which can be used for the synthesis of metalloid tin clusters to give the neutral cluster Sn 10 [Ge(SiMe₃)₃]₆ as well as the charged clusters {Sn 10 [Ge(SiMe₃)₃]₅} − and {Sn 10 [Ge(SiMe₃)₃]₄} 2− . The obtained metalloid clusters are structurally similar to their Si(SiMe₃)₃ derivatives. However, differences with respect to the stability in solution are observed. Additionally, a different electronic situation for the tin atoms is realized as shown by 119m Sn Mössbauer spectroscopy, giving further insight into the different kinds of tin atoms within the metalloid cluster {Sn 10 [Ge(SiMe₃)₃]₄} 2− . The synthesis of diverse derivatives gives the opportunity to check the influence of the substituent for further investigations of metalloid tin cluster compounds.

21 CFR 872.3100 - Dental amalgamator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Dental amalgamator. 872.3100 Section 872.3100 Food... DEVICES DENTAL DEVICES Prosthetic Devices § 872.3100 Dental amalgamator. (a) Identification. A dental... and dental alloy particles, such as silver, tin, zinc, and copper. The mixed dental amalgam material...

21 CFR 872.3100 - Dental amalgamator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Dental amalgamator. 872.3100 Section 872.3100 Food... DEVICES DENTAL DEVICES Prosthetic Devices § 872.3100 Dental amalgamator. (a) Identification. A dental... and dental alloy particles, such as silver, tin, zinc, and copper. The mixed dental amalgam material...

21 CFR 872.3100 - Dental amalgamator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Dental amalgamator. 872.3100 Section 872.3100 Food... DEVICES DENTAL DEVICES Prosthetic Devices § 872.3100 Dental amalgamator. (a) Identification. A dental... and dental alloy particles, such as silver, tin, zinc, and copper. The mixed dental amalgam material...

21 CFR 872.3100 - Dental amalgamator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Dental amalgamator. 872.3100 Section 872.3100 Food... DEVICES DENTAL DEVICES Prosthetic Devices § 872.3100 Dental amalgamator. (a) Identification. A dental... and dental alloy particles, such as silver, tin, zinc, and copper. The mixed dental amalgam material...

21 CFR 872.3100 - Dental amalgamator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Dental amalgamator. 872.3100 Section 872.3100 Food... DEVICES DENTAL DEVICES Prosthetic Devices § 872.3100 Dental amalgamator. (a) Identification. A dental... and dental alloy particles, such as silver, tin, zinc, and copper. The mixed dental amalgam material...

URANIUM COMPOSITIONS

DOEpatents

Allen, N.P.; Grogan, J.D.

1959-05-12

This patent relates to high purity uranium alloys characterized by improved stability to thermal cycling and low thermal neutron absorption. The high purity uranium alloy contains less than 0.1 per cent by weight in total amount of any ore or more of the elements such as aluminum, silicon, phosphorous, tin, lead, bismuth, niobium, and zinc.

46 CFR 114.600 - Incorporation by reference.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Conshohocken, PA 19428-2959 ASTM B 96-93, Standard Specification for Copper-Silicon Alloy Plate, Sheet, Strip... Operating Salt Spray (Fog) Apparatus 114.400 ASTM B 122/B 122M-95, Standard Specification for Copper-Nickel-Tin Alloy , Copper-Nickel-Zinc Alloy (Nickel Silver), and Copper-Nickel Alloy Plate, Sheet, Strip, and...

46 CFR 114.600 - Incorporation by reference.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Conshohocken, PA 19428-2959 ASTM B 96-93, Standard Specification for Copper-Silicon Alloy Plate, Sheet, Strip... Operating Salt Spray (Fog) Apparatus 114.400 ASTM B 122/B 122M-95, Standard Specification for Copper-Nickel-Tin Alloy , Copper-Nickel-Zinc Alloy (Nickel Silver), and Copper-Nickel Alloy Plate, Sheet, Strip, and...

Cadmium zinc sulfide by solution growth

DOEpatents

Chen, Wen S.

1992-05-12

A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Li-Chih; Chen, Jen-Sue, E-mail: jenschen@mail.ncku.edu.tw, E-mail: jsjeng@mail.nutn.edu.tw; Jeng, Jiann-Shing, E-mail: jenschen@mail.ncku.edu.tw, E-mail: jsjeng@mail.nutn.edu.tw

Solution-processed ultra-thin (∼3 nm) zinc tin oxide (ZTO) thin film transistors (TFTs) with a mobility of 8 cm{sup 2}/Vs are obtained with post spin-coating annealing at only 350 °C. The effect of light illumination (at wavelengths of 405 nm or 532 nm) on the stability of TFT transfer characteristics under various gate bias stress conditions (zero, positive, and negative) is investigated. It is found that the ΔV{sub th} (V{sub th}{sup stress} {sup 3400} {sup s − stress} {sup 0} {sup s}) window is significantly positive when ZTO TFTs are under positive bias stress (PBS, ΔV{sub th} = 9.98 V) and positive bias illumination stress (λ = 405 nm and ΔV{sub th} = 6.96 V), butmore » ΔV{sub th} is slightly negative under only light illumination stress (λ = 405 nm and ΔV{sub th} = −2.02 V) or negative bias stress (ΔV{sub th} = −2.27 V). However, the ΔV{sub th} of ZTO TFT under negative bias illumination stress is substantial, and it will efficiently recover the ΔV{sub th} caused by PBS. The result is attributed to the photo-ionization and subsequent transition of electronic states of oxygen vacancies (i.e., V{sub o}, V{sub o}{sup +}, and V{sub o}{sup ++}) in ZTO. A detailed mechanism is discussed to better understand the bias stress stability of solution processed ZTO TFTs.« less

High performance zinc anode for battery applications

NASA Technical Reports Server (NTRS)

Casey, John E., Jr. (Inventor)

1998-01-01

An improved zinc anode for use in a high density rechargeable alkaline battery is disclosed. A process for making the zinc electrode comprises electrolytic loading of the zinc active material from a slightly acidic zinc nitrate solution into a substrate of nickel, copper or silver. The substrate comprises a sintered plaque having very fine pores, a high surface area, and 80-85 percent total initial porosity. The residual porosity after zinc loading is approximately 25-30%. The electrode of the present invention exhibits reduced zinc mobility, shape change and distortion, and demonstrates reduced dendrite buildup cycling of the battery. The disclosed battery is useful for applications requiring high energy density and multiple charge capability.

Zinc Tantalum Oxynitride (ZnTaO2N) Photoanode Modified with Cobalt Phosphate Layers for the Photoelectrochemical Oxidation of Alkali Water

PubMed Central

T. Weller, Mark

2018-01-01

Photoanodes fabricated by the electrophoretic deposition of a thermally prepared zinc tantalum oxynitride (ZnTaO2N) catalyst onto indium tin oxide (ITO) substrates show photoactivation for the oxygen evolution reaction (OER) in alkaline solutions. The photoactivity of the OER is further boosted by the photodeposition of cobalt phosphate (CoPi) layers onto the surface of the ZnTaO2N photoanodes. Structural, morphological, and photoelectrochemical (PEC) properties of the modified ZnTaO2N photoanodes are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible (UV−Vis) diffuse reflectance spectroscopy, and electrochemical techniques. The presence of the CoPi layer significantly improved the PEC performance of water oxidation in an alkaline sulphate solution. The photocurrent-voltage behavior of the CoPi-modified ZnTaO2N anodes was improved, with the influence being more prominent at lower oxidation potentials. A stable photocurrent density of about 2.3 mA·cm−2 at 1.23 V vs. RHE was attained upon visible light illumination. Relative to the ZnTaO2N photoanodes, an almost three-fold photocurrent increase was achieved at the CoPi/ZnTaO2N photoelectrode. Perovskite-based oxynitrides are modified using an oxygen-evolution co-catalyst of CoPi, and provide a new dimension for enhancing the photoactivity of oxygen evolution in solar-assisted water-splitting reactions. PMID:29346306

Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods.

PubMed

Sun, Baoquan; Sirringhaus, Henning

2005-12-01

Colloidal zinc oxide (ZnO) nanocrystals are attractive candidates for a low-temperature and solution-processible semiconductor for high-performance thin-film field-effect transistors (TFTs). Here we show that by controlling the shape of the nanocrystals from spheres to rods the semiconducting properties of spin-coated ZnO films can be much improved as a result of increasing particle size and self-alignment of the nanorods along the substrate. Postdeposition hydrothermal growth in an aqueous zinc ion solution has been found to further enhance grain size and connectivity and improve device performance. TFT devices made from 65-nm-long and 10-nm-wide nanorods deposited by spin coating have been fabricated at moderate temperatures of 230 degrees C with mobilities of 0.61 cm(2)V(-1)s(-1) and on/off ratios of 3 x 10(5) after postdeposition growth, which is comparable to the characteristics of TFTs fabricated by traditional sputtering methods.

Influence of sodium bis(2-ethylhexyl) sulfosuccinate (AOT) on zinc electrodeposition

NASA Astrophysics Data System (ADS)

Lehr, I. L.; Saidman, S. B.

2012-03-01

This work is a study of the electrodeposition of zinc onto SAE 4140 steel electrodes using solutions containing zinc sulfate and bis(2-ethylhexyl) sodium sulfosuccinate (AOT). The influence of different parameters such as electrolyte concentration, electrodeposition time and temperature on the morphology of the electrodeposits was analyzed. The deposits were characterized by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and X-ray diffraction. The variation of open circuit potential over time in chloride solutions was also evaluated. The nucleation-growth process and consequently the morphology of the electrodeposits are modified in the presence of AOT. The surfactant induces the formation of a porous deposit.

Preparation of superhydrophobic coatings on zinc as effective corrosion barriers.

PubMed

Liu, Hongqin; Szunerits, Sabine; Xu, Wenguo; Boukherroub, Rabah

2009-06-01

Stable superhydrophobic films with a contact angle of 151 +/- 2 degrees were prepared on zinc substrates by a simple immersion technique into a methanol solution of hydrolyzed 1H,1H,2H,2H-perfluorooctyltrichlorosilane [CF3(CF2)5(CH2)2SiCl3, PFTS] for 5 days at room temperature followed by a short annealing at 130 degrees C in air for 1 h. The superhydrophobic film provides an effective corrosion-resistant coating for the zinc interface when immersed in an aqueous solution of sodium chloride (3% NaCl) for up to 29 days. The corrosion process was investigated by following the change of the water contact angle over time and by electrochemical means. The results are compared to those of unprotected zinc interfaces.

Mechanistic study of the electrodeposition of nanoporous self-assembled ZnO/Eosin Y hybrid thin films: effect of eosin concentration.

PubMed

Goux, Aurélie; Pauporté, Thierry; Yoshida, Tsukasa; Lincot, Daniel

2006-12-05

ZnO films prepared by one-step electrodeposition in the presence of dissolved eosin molecules present an internal nanoporous hybrid structure resulting from self-assembling processes occurring in solution between ZnO and eosin components. This study aims to better understand the underlying growth mechanism, which is still unexplained. The films were deposited by cathodic electrodeposition from an oxygen-saturated aqueous zinc chloride solution. The effects of the addition of 10 to 100 micromol.L(-1) eosin Y, as a sodium salt, on the growth rate and film properties, were systematically studied while all other parameters remained constant (concentrations of zinc salt and supporting electrolyte, applied potential of -1.4 V versus the mercurous sulfate electrode (MSE), temperature of 70 degrees C, rotating disk electrode at 300 rotations per min, and a glass-coated tin oxide electrode). It is shown that the addition of eosin provokes the formation of a nanoporous "cauliflower" structure whose nodule size and composition depend on the eosin concentration in the bath. The growth rate of the hybrid films increases markedly with the eosin concentration. The ZnO and eosin contents of the films are determined for each concentration by chemical analysis. Comparing with thickness determinations, it is shown that the total porosity increases up to 60-65% in volume fraction toward an eosin concentration of 100 micromol.L(-1). The empty pore volume fraction increases up to about 30% at an eosin concentration of about 20 micromol.L(-1) and then decreases. These correlations have been precisely established for the first time. It is shown that the global composition is fixed by the relative rate of deposition for zinc oxide, which is constant, and for the relative rate of eosin inclusion, which is proportional to the concentration in solution. This is explained on the basis of different steps in the growth mechanism, in particular, a diffusion effect limitation for both oxygen and eosin. This variation explains part of the increase in the growth rate. Another contribution is related by the structural effect on the nanoscale leading to the formation of the interpenetrated porous network. Competition between empty and eosin-filled parts of the pore network is evidenced. The formation of the porous network structure could be governed by a diffusion-limited aggregation mechanism. The system may represent a reference case of competing reactions in the electrochemical self-assembly of hybrid nanostructures.

Comparative Analysis of Data Structures for Storing Massive Tins in a Dbms

NASA Astrophysics Data System (ADS)

Kumar, K.; Ledoux, H.; Stoter, J.

2016-06-01

Point cloud data are an important source for 3D geoinformation. Modern day 3D data acquisition and processing techniques such as airborne laser scanning and multi-beam echosounding generate billions of 3D points for simply an area of few square kilometers. With the size of the point clouds exceeding the billion mark for even a small area, there is a need for their efficient storage and management. These point clouds are sometimes associated with attributes and constraints as well. Storing billions of 3D points is currently possible which is confirmed by the initial implementations in Oracle Spatial SDO PC and the PostgreSQL Point Cloud extension. But to be able to analyse and extract useful information from point clouds, we need more than just points i.e. we require the surface defined by these points in space. There are different ways to represent surfaces in GIS including grids, TINs, boundary representations, etc. In this study, we investigate the database solutions for the storage and management of massive TINs. The classical (face and edge based) and compact (star based) data structures are discussed at length with reference to their structure, advantages and limitations in handling massive triangulations and are compared with the current solution of PostGIS Simple Feature. The main test dataset is the TIN generated from third national elevation model of the Netherlands (AHN3) with a point density of over 10 points/m2. PostgreSQL/PostGIS DBMS is used for storing the generated TIN. The data structures are tested with the generated TIN models to account for their geometry, topology, storage, indexing, and loading time in a database. Our study is useful in identifying what are the limitations of the existing data structures for storing massive TINs and what is required to optimise these structures for managing massive triangulations in a database.

Alkali Silicate Glass Coatings for Mitigating the Risks of Tin Whiskers

NASA Astrophysics Data System (ADS)

Hillman, Dave; Wilcoxon, Ross; Lower, Nate; Grossman, Dan

2015-12-01

Alkali silicate glass (ASG) coatings were investigated as a possible method for inhibiting tin whisker initiation and growth. The aqueous-based ASG formulations used in this study were deposited with equipment and conditions that are typical of those used to apply conventional conformal coatings. Processes for controlling ASG coating properties were developed, and a number of ASG-based coating combinations were applied to test components with pure tin surfaces. Coatings were applied both in a laboratory environment at Rockwell Collins and in a manufacturing environment at Plasma Ruggedized Solutions. Testing in elevated humidity/temperature environments and subsequent inspection of the test articles identified coating combinations that inhibited tin whisker growth as well as other material combinations that actually accelerated tin whisker growth. None of the coatings evaluated in this study, including conventional acrylic and Parylene conformal coatings, completely prevented the formation of tin whiskers. Two of the coatings were particularly effective at reducing the risks of whisker growth, albeit through different mechanisms. Parylene conformal coating almost, but not completely, eliminated whisker formation, and only a few tin whiskers were found on these surfaces during the study. A composite of ASG and alumina nanoparticles inhibited whisker formation to a lesser degree than Parylene, but did disrupt whisker growth mechanisms so as to inhibit the formation of long, and more dangerous, tin whiskers. Additional testing also demonstrated that the conformal coatings had relatively little effect on the dielectric loss of a stripline test structure operating at frequencies over 30 GHz.

Occurrence of silver minerals in a silver-rich pocket in the massive sulfide zinc-lead ores in the Edwards mine, New York

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serviss, C.R.; Grout, C.M.; Hagni, R.D.

1985-01-01

Ore microscopic examination of uncommon silver-rich ores from the Edwards mine has detected three silver minerals, native silver, freibergite, and argentite, that were previously unreported in the literature from the Balmat-Edwards district. The zinc-lead ore deposits of the Balmat-Edwards District in northern New York are composed of very coarse-grained massive sulfides, principally sphalerite, galena, and pyrite. The typical ores contain small amounts of silver in solid solution galena. Galena concentrates produced from those ores have contained an average of 15 ounces of silver per ton of 60% lead concentrates. In contrast to the typical ore a silver-rich pocket, that measuredmore » three feet by three feet on the vertical mine face and was the subject of this study, contained nearly 1% silver in a zinc ore. Ore microscopic study shows that this ore is especially characterized by abundant, relatively fine-grained chalcopyrite with anhedral pyrite inclusions. Fine-grained sphalerite, native silver, argentite, freibergite and arsenopyrite occur in association with the chalcopyrite and as fracture-fillings in gangue minerals. Geochemically anomalous amounts of tin, barium, chromium, and nickel also are present in the silver-rich pocket. The silver-rich pocket may mark the locus of an early feeder vent or alternatively it may record a hydrothermal event that was superimposed upon the event responsible for the metamorphic ore textures.« less

Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kawaharamura, Toshiyuki; Hirao, Takashi

2012-03-01

A novel etching process with etchant mist was developed and applied to oxide thin films such as zinc oxide (ZnO), zinc magnesium oxide (ZnMgO), and indium tin oxide (ITO). By using this process, it was shown that precise control of the etching characteristics is possible with a reasonable etching rate, for example, in the range of 10-100 nm/min, and a fine pattern of high accuracy can also be realized, even though this is usually very difficult by conventional wet etching processes, for ZnO and ZnMgO. The mist etching process was found to be similarly and successfully applied to ITO. The mechanism of mist etching has been studied by examining the etching temperature dependence of pattern accuracy, and it was shown that the mechanism was different from that of conventional liquid-phase spray etching. It was ascertained that fine pattern etching was attained using mist droplets completely (or partly) gasified by the heat applied to the substrate. This technique was applied to the fabrication of a ZnO thin-film transistor (TFT) with a ZnO active channel length of 4 µm. The electrical properties of the TFT were found to be excellent with fine uniformity over the entire 4-in. wafer.

Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

NASA Astrophysics Data System (ADS)

Lo, Chun-Chieh; Hsieh, Tsung-Eong

2016-09-01

Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V SET  =  0.61 V V RESET  =  -0.76 V R HRS/R LRS (i.e. the R-ratio)  >103) was observed in the device subject to a post-annealing at 300 °C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 °C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.

Preparation of nanocrystalline TiN coated cubic boron nitride powders by a sol-gel process.

PubMed

Park, Hee S; Umer, M Adeel; Ryu, Ho J; Hong, Soon H

2011-01-01

Cubic boron nitride (cBN) particles coated with 20 wt% nanocrystalline TiN were prepared by coating the surface of cBN particles with TiO2, followed by nitridation with NH3 gas at 900 degrees C. Coating of TiO2 on cBN powders was accomplished by a sol-gel process from a solution of titanium (IV) isopropoxide and anhydrous ethanol. An amorphous TiO(x) layer of 50 nm thickness was homogenously formed on the surface of the cBN particles by the sol-gel process. The amorphous layer was then crystallized to an anatase TiO2 phase through calcination in air at 400 degrees C. The crystallized TiO2 layer was 50 nm in thickness, and the size of TiO2 particles comprising the layer was nearly 10 nm. The TiO2 on cBN surfaces was completely converted into nanocrystalline TiN of uniform particles 20 nm in size on cBN particles by nitridation under flowing NH3 gas.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

[Evaluation of uncertainty for determination of tin and its compounds in air of workplace by flame atomic absorption spectrometry].

PubMed

Wei, Qiuning; Wei, Yuan; Liu, Fangfang; Ding, Yalei

2015-10-01

To investigate the method for uncertainty evaluation of determination of tin and its compounds in the air of workplace by flame atomic absorption spectrometry. The national occupational health standards, GBZ/T160.28-2004 and JJF1059-1999, were used to build a mathematical model of determination of tin and its compounds in the air of workplace and to calculate the components of uncertainty. In determination of tin and its compounds in the air of workplace using flame atomic absorption spectrometry, the uncertainty for the concentration of the standard solution, atomic absorption spectrophotometer, sample digestion, parallel determination, least square fitting of the calibration curve, and sample collection was 0.436%, 0.13%, 1.07%, 1.65%, 3.05%, and 2.89%, respectively. The combined uncertainty was 9.3%.The concentration of tin in the test sample was 0.132 mg/m³, and the expanded uncertainty for the measurement was 0.012 mg/m³ (K=2). The dominant uncertainty for determination of tin and its compounds in the air of workplace comes from least squares fitting of the calibration curve and sample collection. Quality control should be improved in the process of calibration curve fitting and sample collection.

Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

NASA Astrophysics Data System (ADS)

Kim, Dong Wook; Park, Jaehoon; Hwang, Jaeeun; Kim, Hong Doo; Ryu, Jin Hwa; Lee, Kang Bok; Baek, Kyu Ha; Do, Lee-Mi; Choi, Jong Sun

2015-01-01

In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of 0.05 cm2/Vs and an on/off current ratio of 106. Such electrical properties are quite close to those of devices that are thermally annealed at 165℃ for 40 min. X-ray photoelectron spectroscopy analysis of ZnO films showed that the activation energy required to form a Zn-O bond is entirely supplied within 15 s of pulse-light exposure. We conclude that the pulse-light annealing method is viable for rapidly curing solution-processable oxide semiconductors for TFT applications.

Influence of zinc on the calcium carbonate biomineralization of Halomonas halophila

PubMed Central

2012-01-01

Background The salt tolerance of halophilic bacteria make them promising candidates for technical applications, like isolation of salt tolerant enzymes or remediation of contaminated saline soils and waters. Furthermore, some halophilic bacteria synthesize inorganic solids resulting in organic–inorganic hybrids. This process is known as biomineralization, which is induced and/or controlled by the organism. The adaption of the soft and eco-friendly reaction conditions of this formation process to technical syntheses of inorganic nano materials is desirable. In addition, environmental contaminations can be entrapped in biomineralization products which facilitate the subsequent removal from waste waters. The moderately halophilic bacteria Halomonas halophila mineralize calcium carbonate in the calcite polymorph. The biomineralization process was investigated in the presence of zinc ions as a toxic model contaminant. In particular, the time course of the mineralization process and the influence of zinc on the mineralized inorganic materials have been focused in this study. Results H. halophila can adapt to zinc contaminated medium, maintaining the ability for biomineralization of calcium carbonate. Adapted cultures show only a low influence of zinc on the growth rate. In the time course of cultivation, zinc ions accumulated on the bacterial surface while the medium depleted in the zinc contamination. Intracellular zinc concentrations were below the detection limit, suggesting that zinc was mainly bound extracellular. Zinc ions influence the biomineralization process. In the presence of zinc, the polymorphs monohydrocalcite and vaterite were mineralized, instead of calcite which is synthesized in zinc-free medium. Conclusions We have demonstrated that the bacterial mineralization process can be influenced by zinc ions resulting in the modification of the synthesized calcium carbonate polymorph. In addition, the shape of the mineralized inorganic material is chancing through the presence of zinc ions. Furthermore, the moderately halophilic bacterium H. halophila can be applied for the decontamination of zinc from aqueous solutions. PMID:23198844

HUMAN SCALP HAIR: AN ENVIRONMENTAL EXPOSURE INDEX FOR TRACE ELEMENTS. II. SEVENTEEN TRACE ELEMENTS IN FOUR NEW JERSEY COMMUNITIES (1972)

EPA Science Inventory

Seventeen trace elements - arsenic (As), barium (Ba), boron (B), cadmium (Cd), chromium (Cr), copper (Cu), Iron (Fe), lead (Pb), lithium (Li), manganese (Mn), mercury (Hg), nickle (Ni), selenium (Se), silver (Ag), tin (Sn), vanadium (V), and zinc (Zn) - were measured in human sca...

Composition of the edible portion of raw (fresh or frozen) crustaceans, finfish, and mollusks. III. Microelements. [Review

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sidwell, V.D.; Loomis, A.L.; Loomis, K.J.

1978-09-01

This report summarizes data from 224 publications referring to the microelements found in the flesh of commonly eaten seafoods. These microelements are: copper, iron, zinc, iodine, manganese, mercury, organic mercury, lead arsenic, fluorine, silver, cadmium, cobalt, selenium, chromium, vanadium, tin, aluminum, nickel, barium, and molybdenum.

Surface modification of graphene using HBC-6ImBr in solution-processed OLEDs

NASA Astrophysics Data System (ADS)

Cheng, Tsung-Chin; Ku, Ting-An; Huang, Kuo-You; Chou, Ang-Sheng; Chang, Po-Han; Chang, Chao-Chen; Yue, Cheng-Feng; Liu, Chia-Wei; Wang, Po-Han; Wong, Ken-Tsung; Wu, Chih-I.

2018-01-01

In this work, we report a simple method for solution-processed organic light emitting devices (OLEDs), where single-layer graphene acts as the anode and the hexa-peri-hexabenzocoronene exfoliating agent (HBC-6ImBr) provides surface modification. In SEM images, the PEDOT:PSS solution fully covered the graphene electrode after coating with HBC-6ImBr. The fabricated solution-processed OLEDs with a single-layer graphene anode showed outstanding brightness at 3182 cd/m2 and current efficiency up to 6 cd/A which is comparable to that of indium tin oxide films, and the OLED device brightness performance increases six times compared to tri-layer graphene treated with UV-Ozone at the same driving voltage. This method can be used in a wide variety of solution-processed organic optoelectronics on surface-modified graphene anodes.

Contribution to the aluminum-tin-zinc ternary system

NASA Astrophysics Data System (ADS)

Drápala, J.; Kostiuková, G.; Losertová, M.

2017-11-01

The Sn-Zn-Al alloys are one of significant candidates in the proposal of alternative lead-free solders for higher temperature soldering. This paper deals with the study of the aluminum-tin-zinc system. Twenty Sn-Zn-Al alloys together with six binary Sn-Zn alloys were prepared and studied experimentally. Alloys were prepared from pure Sn, Zn and Al (melting and cooling in a vacuum resistance furnace). The specimens were studied metallographically including the micro-hardness measurements, complete chemical analysis (ICP-AES, OES), X-ray micro-analysis of alloys by SEM and EDX in order to determine the composition and identification of individual phases. Significant temperatures and enthalpies of phase transformations were determined by DTA. After long-term annealing of selected alloys in vacuum followed by quenching the structural and chemical microanalyses of the present phases and their limit concentrations were carried out. The achieved results were compared with the thermodynamic modelling of the ternary Sn-Zn-Al system (computer programs THERMOCALC, MTDATA, PANDAT and databases CALPHAD, COST). Electrical resistivity, density, magnetic susceptibility and wettability of Sn-Zn-Al solders were measured as well.

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Park, Jinhee; Rim, You Seung; Li, Chao; Wu, Jiechen; Goorsky, Mark; Streit, Dwight

2018-04-01

We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function of oxygen ratio [O2/(Ar + O2)] during growth. Increasing the oxygen ratio enhanced the incorporation of oxygen during ITZO film growth and reduced the concentration of deep-level defects associated with oxygen vacancies. Under illumination with no bias stress, device stability and persistent photocurrent were improved with increased oxygen ratio. Bias stress tests of the devices were also performed with and without illumination. While high oxygen ratio growth conditions resulted in decreased deep-level oxygen vacancies in the ITZO material, the same conditions resulted in degradation of the interfacial layer between the ITZO channel and dielectric due to the migration of energetic oxygen ions to the interface. Therefore, when bias stress was applied, increased carrier trap density at the interface led to a decrease in device stability that offsets any improvement in the material itself. In order to take advantage of the improved ITZO material growth at a high oxygen ratio, the interface-related problems must be solved.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Techno-Economic Assessment of Recycling BOF Offgas Cleaning System Solid Wastes by Using Zinc-Free Scrap

NASA Astrophysics Data System (ADS)

Ma, Naiyang

High zinc concentration in basic oxygen furnace (BOF) steelmaking offgas (OG) cleaning system solid wastes is one of the main barriers for recycling of the solid wastes in sintering — blast furnace ironmaking process. One of the possible solutions is to utilize zinc-free scrap in BOF steelmaking so that the BOF OG solid wastes will not be contaminated with zinc and can be recycled through sintering — blast furnace ironmaking. This paper describes a model for helping to decide whether to use zinc-free scrap in a BOF process. A model computing marginal price increment of zinc-free scrap is developed. The marginal price increment is proportional to value change of the BOF OG solid wastes after and before using zinc-free scrap, to ratio of BOF solid waste rate to purchased galvanized scrap rate, and to price of galvanized scrap. Due to the variations of consumption rate of purchased galvanized scrap and home galvanized scrap, iron ore price, landfill cost, and price of purchased galvanized scrap, using zinc-free scrap in a BOF process might be economically feasible for some ironmaking and steelmaking plants or in some particular market circumstances.

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Jungwon; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. PMID:29283408

Effect of solution treatment on the microstructure, tensile properties, and corrosion behavior of the Mg-5Sn-2Zn-0.1Mn alloy

NASA Astrophysics Data System (ADS)

El Mahallawy, N.; Hammouda, R.; Shoeib, M.; Diaa, Alia A.

2018-01-01

Working on magnesium alloys containing relatively inexpensive alloying elements such as tin, zinc, and manganese have been a target for many studies. The binary Mg-Sn and Mg-Zn systems have a wide range of solid solubility which make them heat-treatable alloys. In the present study, the microstructure, tensile properties, and corrosion behavior of the Mg-5Sn-2Zn-0.1Mn alloy was studied in the as cast state and after heat treatment at a temperature reaching 450 °C for about 24 h. It was found that a noticeable enhancement in strength and corrosion resistance was achieved through heat treatment. The strength of the as cast alloy increased from 76.24 ± 6.21 MPa to 187.33 ± 10.3 MPa, while the corrosion rate decreased from 1.129 to 0.399 mm y-1.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Characterisation of a PdCl 2/SnCl 2 electroless plating catalyst system adsorbed on barium titanate-based electroactive ceramics

NASA Astrophysics Data System (ADS)

Meenan, B. J.; Brown, N. M. D.; Wilson, J. W.

1994-03-01

A PdCl 2/SnCl 2 metallisation catalyst system, of the type used to activate non-conducting surfaces for electroless metal deposition, has been characterised by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The substrate is a barium titanate (BaTiO 3)-based electroactive ceramic of the type used in the fabrication of multilayer ceramic capacitors (MLCC). The treatment of the substrate surface with the PdCl 2/SnCl 2 "sensitiser" solution leads to the adsorption of catalytically inactive compounds of palladium and tin. Subsequent treatment of this surface with an "accelerator" solution removes excess oxides, hydroxides and salts of tin thereby leaving the active catalyst species, Pd xSn y, on the surface. Such sites, on exposure to the appropriete electroless plating bath, are then responsible for the metal deposition. In this study, the chemical state and relative quantities of the various surface species present after each of the processing stages have been determined by XPS. The surface roughness of the substrate results in less of the tin compounds present thereon being removed on washing the catalysed surface in the accelerator solution than normally reported for such systems, thereby affecting the measured Pd: Sn ratio. SEM studies show that the accelerator solution treatment generates crystalline areas, which may be a result of coagulation of the Pd xSn y particles present, in the otherwise amorphous catalyst coating.

Structural studies of ZnO nanostructures by varying the deposition parameters

NASA Astrophysics Data System (ADS)

Yunus, S. H. A.; Sahdan, M. Z.; Ichimura, M.; Supee, A.; Rahim, S.

2017-01-01

The effect of Zinc Oxide (ZnO) thin film on the growth of ZnO nanorods (NRs) was investigated. The structures of ZnO NRs were synthesized by chemical bath deposition (CBD) method in aqueous solution of N2O6Zn.6H2O and C6H12N4 at 90°C of deposition temperature. One of the ZnO NRs samples was deposited on a ZnO seed layer coated on a glass substrate to investigate the properties of ZnO NRs without receiving effect of other materials. Next, for diode application, the ZnO NRs was deposited on tin monosulfide (SnS) coated on indium-tin-oxide (ITO) coated glass substrate (SnS/ITO). The next, the ZnO structural properties were studied from surface morphology, X-ray diffractometer (XRD) spectra, and chemical composition by using field emission scanning electron microscope (FESEM), XRD and energy dispersive X-ray Spectroscopy (EDX). The growth of ZnO NRs on ZnO seed layer was investigated by ZnO seed layer condition while the growth of ZnO NRs on SnS/ITO was investigated by deposition time and deposition temperature parameters. From FESEM images, aligned ZnO NRs were obtained, and the diameters of ZnO NRs were 0.024-3.94 µm. The SnS thin film was affected by the diameter of ZnO NRs which are the ZnO NRs grow on SnS thin films has a larger diameter compared to ZnO NRs grow on ZnO seed layer. Besides that, all of ZnO peaks observed from XRD corresponding to the wurzite structure and preferentially oriented along the c-axis. In addition, EDX shows a high composition of zinc (Zn) and oxygen (O) signals, which indicated that the NRs are indeed made up of Zn and O.

Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents.

PubMed

You, Hsin-Chiang; Wang, Cheng-Jyun

2017-02-26

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In this work, we demonstrate the utility of the TFT ZnO channel to sense various liquids, such as polar solvents (ethanol), non-polar solvents (toluene) and deionized (DI) water, which were dropped and adsorbed onto the channel. It is discussed how different dielectric constants of polar/non-polar solvents and DI water were associated with various charge transport properties, demonstrating the main detection mechanisms of the thin-film transistor.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.

PubMed

Na, Jae Won; Rim, You Seung; Kim, Hee Jun; Lee, Jin Hyeok; Hong, Seonghwan; Kim, Hyun Jae

2017-09-06

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO 2 ) dielectric layer are in contact and thermally processed, a Si 4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm 2 V -1 s -1 and a on/off current ratio over 10 7 is successfully demonstrated.

Purification process for .sup.153Gd produced in natural europium targets

DOEpatents

Johnsen, Amanda M; Soderquist, Chuck Z; McNamara, Bruce K; Risher, Darrell R

2013-04-23

An alteration of the traditional zinc/zinc-amalgam reduction procedure which eliminates both the hazardous mercury and dangerous hydrogen gas generation. In order to avoid the presence of water and hydrated protons in the working solution, which can oxidize Eu.sup.2+ and cause hydrogen gas production, a process utilizing methanol as the process solvent is described. While methanol presents some flammability hazard in a radiological hot cell, it can be better managed and is less of a flammability hazard than hydrogen gas generation.

Effect of alloying elements on the physicomechanical properties of copper and tin bronze

NASA Astrophysics Data System (ADS)

Ri, Kh.; Komkov, V. G.; Ri, E. Kh.

2014-09-01

The effect of alloying elements (Al, Si, Mn, Zn, Ni, As) on the physicomechanical properties of copper and tin bronze (6 wt % Sn) is studied. These alloying elements are found to increase the hardness and the microhardness of the structural constituents of Cu- X alloys due to hardening the α solid solution and eutectoid, and this effect of alloying elements is most effective in tin bronze. Alloyed copper and tin bronze have a lower thermal conductivity and corrosion resistance as compared to plain copper and tin bronze.

40 CFR 437.21 - Effluent limitations attainable by the application of the best practicable control technology...

Code of Federal Regulations, 2010 CFR

2010-07-01

....6 Metal Parameters Arsenic 2.95 1.33 Cadmium 0.0172 0.0102 Chromium 0.746 0.323 Cobalt 56.4 18.8 Copper 0.500 0.242 Lead 0.350 0.160 Mercury 0.0172 0.00647 Tin 0.335 0.165 Zinc 8.26 4.50 Organic...

HUMAN SCALP HAIR: AN ENVIRONMENTAL EXPOSURE INDEX FOR TRACE ELEMENTS. III. SEVENTEEN TRACE ELEMENTS IN BIRMINGHAM, ALABAMA AND CHARLOTTE, NORTH CAROLINA (1972)

EPA Science Inventory

Seventeen trace elements - arsenic (As), barium (Ba), boron, (B), cadmium, (Cd), chromium (Cr), copper (Cu), Iron (Fe), lead (Pb), lithium (Li), manganese (Mn), mercury (Hg), nickel (Ni), selenium (Se), silver (Ag), tin (Sn), vanadium (V), and Zinc (Zn) - were measured in human s...

High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cells.

PubMed

Steichen, Marc; Malaquias, João C; Arasimowicz, Monika; Djemour, Rabie; Brooks, Neil R; Van Meervelt, Luc; Fransaer, Jan; Binnemans, Koen; Dale, Phillip J

2017-01-16

Cu 2 ZnSnSe 4 -based solar cells with 5.5% power conversion efficiency were fabricated from Cu/Sn/Zn stacks electrodeposited from liquid metal salts. These electrolytes allow metal deposition rates one order of magnitude higher than those of other deposition methods.

Determination of trace and minor elements in alloys by atomic-absorption spectroscopy using an induction-heated graphite-well furnace as atom source-II.

PubMed

Ashy, M A; Headridge, J B; Sowerbutts, A

1974-06-01

Results are presented for the atomic-absorption spectrophotometric determination of zinc in aluminium and aluminium-silicon alloys, and aluminium, antimony and tin in steels, by means of solid samples dropped into an induction-heated graphite-well furnace to produce the atomic vapour.

Highly patterned growth of SnO2 nanowires using a sub-atmospheric vapor-liquid-solid deposition

NASA Astrophysics Data System (ADS)

Akbari, M.; Mohajerzadeh, S.

2017-08-01

We report the realization of tin-oxide nanowires on patterned structures using a vapor-liquid-solid (VLS) process. While gold acts as the catalyst for the growth of wires, a tin-oxide containing sol-gel solution is spin coated on silicon substrate to act as the source for SnO vapor. The growth of tin-oxide nano-structures occurs mostly at the vicinity of the pre-deposited solution. By patterning the gold as the catalyst material, one is able to observe the growth at desired places. The growth of nanowires is highly dense within 100 µm away from such in situ source and their length is of the order of 5 µm. By further distancing from the source, the growth becomes more limited and nanowires become shorter and more sparsely distributed. The growth of nanowires has been studied using scanning and transmission electron microscopy tools while their composition has been investigated using XRD and EDS analyses. As a novel application, we have employed the grown nanowires as electron detection elements to measure the emitted electrons from electron sources. This configuration can be further used as electron detectors for scanning electron microscopes.

Enhanced photovoltaic performance and stability with a new type of hollow 3D perovskite {en}FASnI 3

DOE PAGES

Ke, Weijun; Stoumpos, Constantinos C.; Zhu, Menghua; ...

2017-08-30

Perovskite solar cells have revolutionized the fabrication of solution-processable solar cells. The presence of lead in the devices makes this technology less attractive, and alternative metals in perovskites are being researched as suitable alternatives. We demonstrate a new type of tin-based perovskite absorber that incorporates both ethylenediammonium (en) and formamidinium (FA), forming new materials of the type {en}FASnI 3. The three-dimensional ASnI 3 structure is stable only with methylammonium, FA, and Cs cations, and the bandgap can be tuned with solid solutions, such as ASnI 3-xBr x. We show that en can serve as a new A cation capable ofmore » achieving marked increases in the bandgap without the need for solid solutions. The en introduces a new bandgap tuning mechanism that arises from massive Schottky style defects. In addition, incorporation of the en cation in the structure markedly increases the air stability and improves the photoelectric properties of the tin-based perovskite absorbers. Our best-performing {en}FASnI 3 solar cell has the highest efficiency of 7.14%, which is achieved for a lead-free perovskite cell, and retains 96% of its initial efficiency after aging over 1000 hours with encapsulation. Our results introduce a new approach for improving the performance and stability of tin-based, lead-free perovskite solar cells.« less

Enhanced photovoltaic performance and stability with a new type of hollow 3D perovskite {en}FASnI 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, Weijun; Stoumpos, Constantinos C.; Zhu, Menghua

Perovskite solar cells have revolutionized the fabrication of solution-processable solar cells. The presence of lead in the devices makes this technology less attractive, and alternative metals in perovskites are being researched as suitable alternatives. We demonstrate a new type of tin-based perovskite absorber that incorporates both ethylenediammonium (en) and formamidinium (FA), forming new materials of the type {en}FASnI 3. The three-dimensional ASnI 3 structure is stable only with methylammonium, FA, and Cs cations, and the bandgap can be tuned with solid solutions, such as ASnI 3-xBr x. We show that en can serve as a new A cation capable ofmore » achieving marked increases in the bandgap without the need for solid solutions. The en introduces a new bandgap tuning mechanism that arises from massive Schottky style defects. In addition, incorporation of the en cation in the structure markedly increases the air stability and improves the photoelectric properties of the tin-based perovskite absorbers. Our best-performing {en}FASnI 3 solar cell has the highest efficiency of 7.14%, which is achieved for a lead-free perovskite cell, and retains 96% of its initial efficiency after aging over 1000 hours with encapsulation. Our results introduce a new approach for improving the performance and stability of tin-based, lead-free perovskite solar cells.« less

Enhanced photovoltaic performance and stability with a new type of hollow 3D perovskite {en}FASnI3

PubMed Central

Ke, Weijun; Stoumpos, Constantinos C.; Zhu, Menghua; Mao, Lingling; Spanopoulos, Ioannis; Liu, Jian; Kontsevoi, Oleg Y.; Chen, Michelle; Sarma, Debajit; Zhang, Yongbo; Wasielewski, Michael R.; Kanatzidis, Mercouri G.

2017-01-01

Perovskite solar cells have revolutionized the fabrication of solution-processable solar cells. The presence of lead in the devices makes this technology less attractive, and alternative metals in perovskites are being researched as suitable alternatives. We demonstrate a new type of tin-based perovskite absorber that incorporates both ethylenediammonium (en) and formamidinium (FA), forming new materials of the type {en}FASnI3. The three-dimensional ASnI3 structure is stable only with methylammonium, FA, and Cs cations, and the bandgap can be tuned with solid solutions, such as ASnI3−xBrx. We show that en can serve as a new A cation capable of achieving marked increases in the bandgap without the need for solid solutions. The en introduces a new bandgap tuning mechanism that arises from massive Schottky style defects. In addition, incorporation of the en cation in the structure markedly increases the air stability and improves the photoelectric properties of the tin-based perovskite absorbers. Our best-performing {en}FASnI3 solar cell has the highest efficiency of 7.14%, which is achieved for a lead-free perovskite cell, and retains 96% of its initial efficiency after aging over 1000 hours with encapsulation. Our results introduce a new approach for improving the performance and stability of tin-based, lead-free perovskite solar cells. PMID:28875173

Nucleophilically assisted and cationic ring-opening polymerization of tin-bridged [1]ferrocenophanes.

PubMed

Baumgartner, Thomas; Jäkle, Frieder; Rulkens, Ron; Zech, Gernot; Lough, Alan J; Manners, Ian

2002-08-28

To obtain mechanistic insight, detailed studies of the intriguing "spontaneous" ambient temperature ring-opening polymerization (ROP) of tin-bridged [1]ferrocenophanes Fe(eta-C(5)H(4))(2)SnR(2) 3a (R = t-Bu) and 3b (R = Mes) in solution have been performed. The investigations explored the influence of non-nucleophilic additives such as radicals and radical traps, neutral and anionic nucleophiles, Lewis acids, protic species, and other cationic electrophiles. Significantly, two novel methodologies and mechanisms for the ROP of strained [1]ferrocenophanes are proposed based on this study. First, as the addition of amine nucleophiles such as pyridine was found to strongly accelerate the polymerization rate in solution, a new nucleophilicallyassisted ROP methodology was proposed. This operates at ambient temperature in solution even in the presence of chlorosilanes but, unlike the anionic polymerization of ferrocenophanes, does not involve cyclopentadienyl anions. Second, the addition of small quantities of the electrophilic species H(+) and Bu(3)Sn(+) was found to lead to a cationic ROP process. These studies suggest that the "spontaneous" ROP of tin-bridged [1]ferrocenophanes may be a consequence of the presence of spurious, trace quantities of Lewis basic or acidic impurities. The new ROP mechanisms reported are likely to be of general significance for the ROP of other metallocenophanes (e.g., for thermal ROP in the melt) and for other metallacycles containing group 14 elements.

METHOD FOR COATING GRAPHITE WITH METALLIC CARBIDES

DOEpatents

Steinberg, M.A.

1960-03-22

A method for producing refractory coatings of metallic carbides on graphite was developed. In particular, the graphite piece to be coated is immersed in a molten solution of 4 to 5% by weight of zirconium, titanium, or niobium dissolved in tin. The solution is heated in an argon atmosphere to above 1400 deg C, whereby the refractory metal reacts with the surface of the graphite to form a layer of metalic carbide. The molten solution is cooled to 300 to 400 deg C, and the graphite piece is removed. Excess tin is wiped from the graphite, which is then heated in vacuum to above 2300 deg C. The tin vaporizes from the graphite surface, leaving the surface coated with a tenacious layer of refractory metallic carbide.

Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo.

PubMed

Meijs, S; Alcaide, M; Sørensen, C; McDonald, M; Sørensen, S; Rechendorff, K; Gerhardt, A; Nesladek, M; Rijkhoff, N J M; Pennisi, C P

2016-10-01

The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

Kinetic Aspects of Leaching Zinc from Waste Galvanizing Zinc by Using Hydrochloric Acid Solutions

NASA Astrophysics Data System (ADS)

Sminčáková, Emília; Trpčevská, Jarmila; Pirošková, Jana

2017-10-01

In this work, the results of acid leaching of flux skimmings coming from two plants are presented. Sample A contained two phases, Zn(OH)Cl and NH4Cl. In sample B, the presence of three phases, Zn5(OH)8Cl2·H2O, (NH4)2(ZnCl4) and ZnCl2(NH3)2, was proved. The aqueous solution of hydrochloric acid and distilled water was used as the leaching medium. The effects of the leaching time, temperature and concentration of the leaching medium on the zinc extraction were investigated. The apparent activation energy, E a = 4.61 kJ mol-1, and apparent reaction order n = 0.18 for sample A, and the values E a = 6.28 kJ mol-1 and n = 0.33 for sample B were experimentally determined. Zinc leaching in acid medium is a diffusion-controlled process.

Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

PubMed

Park, Won-Tae; Son, Inyoung; Park, Hyun-Woo; Chung, Kwun-Bum; Xu, Yong; Lee, Taegweon; Noh, Yong-Young

2015-06-24

Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s).

Electrosynthesis and characterization of zinc tungstate nanoparticles

NASA Astrophysics Data System (ADS)

Rahimi-Nasrabadi, Mehdi; Pourmortazavi, Seied Mahdi; Ganjali, Mohammad Reza; Hajimirsadeghi, Seiedeh Somayyeh; Zahedi, Mir Mahdi

2013-09-01

Zinc tungstate nanoparticles with different sizes are produced through an electrolysis process including a zinc plate anode in sodium tungstate solution. The shape and size of the product was found to be controlled by varying reaction parameters such as electrolysis voltage, stirring rate of electrolyte solution and temperature. The morphological (SEM) characterization analysis was performed on the product and UV-Vis spectrophotometry and FT-IR spectroscopy was utilized to characterize the electrodeposited nanoparticles. Study of the particle size of the product versus the electrolysis voltage showed that, increasing the voltage from 4 to 8 V, led to the particle size of zinc tungstate to decrease, but further increasing the voltage from 8 to 12 V, the particle size of the produced particles increased. The size and shape of the product was also found to be dependent on the stirring rate and temperature of the electrolyte solution. X-ray diffraction (XRD), scanning electron microscopy (SEM), FT-IR spectroscopy, and photoluminescence, were used to study the structure as well as composition of the nano-material prepared under optimum conditions.

Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Seungwoon; Jeong, Jaewook

2017-08-01

In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

NASA Astrophysics Data System (ADS)

Jafari, Mohammad Reza; Janghouri, Mohammad; Shahedi, Zahra

2017-01-01

A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del'Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents

PubMed Central

You, Hsin-Chiang; Wang, Cheng-Jyun

2017-01-01

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In this work, we demonstrate the utility of the TFT ZnO channel to sense various liquids, such as polar solvents (ethanol), non-polar solvents (toluene) and deionized (DI) water, which were dropped and adsorbed onto the channel. It is discussed how different dielectric constants of polar/non-polar solvents and DI water were associated with various charge transport properties, demonstrating the main detection mechanisms of the thin-film transistor. PMID:28772592

Efficient inverted polymer solar cells based on conjugated polyelectrolyte and zinc oxide modified ITO electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Tao; Zhu, Xiaoguang; Tu, Guoli, E-mail: tgl@hust.edu.cn

Efficient inverted polymer solar cells (PSCs) were constructed by utilizing a conjugated polyelectrolyte PF{sub EO}SO{sub 3}Na and zinc oxide to modify the indium tin oxide (ITO) electrode. The ITO electrode modified by PF{sub EO}SO{sub 3}Na and zinc oxide possesses high transparency, increased electron mobility, smoothened surface, and lower work function. PTB7:PC{sub 71}BM inverted PSCs containing the modified ITO electrode achieved a high power conversion efficiency (PCE) of 8.49%, exceeding that of the control device containing a ZnO modified ITO electrode (7.48%). Especially, PCE-10:PC{sub 71}BM inverted polymer solar cells achieved a high PCE up to 9.4%. These results demonstrate a usefulmore » approach to improve the performance of inverted polymer solar cells.« less

Optimisation of spray-drying process variables for dry powder inhalation (DPI) formulations of corticosteroid/cyclodextrin inclusion complexes.

PubMed

Cabral-Marques, Helena; Almeida, Rita

2009-09-01

This study aims to develop and characterise a beclomethasone diproprionate:gamma-cyclodextrin (BDP:gamma-CYD) complex and to optimise the variables on the spray-drying process, in order to obtain a powder with the most suitable characteristics for lung delivery. The spray-dried powder--in a mass ratio of 2:5 (BDP:gamma-CYD)--was physically mixed with three carriers of different particle sizes and in different ratios. Particle-size distribution, shape and morphology, moisture content, and uniformity in BDP content of formulations were studied. In vitro aerolisation behaviour of the formulations was evaluated using the Rotahaler, and the performance was characterised based on the uniformity of emitted dose and aerodynamic particle-size distribution (respirable fraction (RF), as a percentage of nominal dose (RFN) and emitted dose (RFE)). The most suitable conditions for the preparation of BDP:gamma-CYD complexes were obtained with the solution flow of 5 ml/min, T(in) of 70 degrees C and T(out) of 50 degrees C. Statistically significant differences in the aerodynamic performances were obtained for formulations containing BDP:gamma-CYD complexes prepared using different solution flows and different T(in) (p<0.05). RFN and RFE vary in direct proportion with T(in), while an inverse relationship was observed for the solution flow. A direct correlation between the RFE and the T(out) was identified. Performance of the formulations was compared with an established commercial product (Beclotaide Rotacaps 100 microg) with improved performance of RF: formulations with respitose carrier attained RFN and RFE twofold greater, and formulations based on 63-90 microm fraction lactose and trehalose achieved a threefold improvement; also, all formulations showed that the percentage of dose of BDP deposited in the "oropharynx" compartment was reduced to half.

Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

NASA Astrophysics Data System (ADS)

Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

2016-09-01

The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

Zinc Removal from the Aqueous Solutions by the Chemically Modified Biosorbents.

PubMed

Rajczykowski, Krzysztof; Sałasińska, Oktawia; Loska, Krzysztof

2018-01-01

Biosorbents are the natural origin adsorbents, which popularity in environmental engineering is steadily increasing due to their low price, ease of acquisition, and lack of the toxic properties. Presented research aimed to analyze the possibility of chemical modification of the straw, which is a characteristic waste in the Polish agriculture, to improve its biosorption properties with respect to removal of selected metals from aquatic solutions. Biosorbents used during the tests was a barley straw that was shredded to a size in the range of 0.2-1.0 mm. The biosorption process was performed for aqueous solutions of zinc at a pH 5. Two different modifications of straw were analyzed: esterification with methanol and modification using the citric acid at elevated temperature. The results, obtained during the research, show a clear improvement in sorption capacity of the straw modified by the citric acid. In the case of straw modified with methanol, it has been shown that the effectiveness of zinc biosorption process was even a twice lower with respect to the unmodified straw. Moreover, it was concluded that the removal of analyzed metals was based mainly on the ion-exchange adsorption mechanism by releasing a calcium and magnesium ions from the straw surface to the solution. Graphical Abstractᅟ.

Velocity of action of oxygen, hydrogen sulfide, and halogens on metals

NASA Technical Reports Server (NTRS)

Tammann, Gustav; Koster, Werner

1952-01-01

This report discusses a method of determining the rate of surface oxidation of a metal by the change in the color of the surface film produced by reactions with oxygen, chlorine, or iodine. The metals studied included iron, nickel, copper, zinc, cadmium, tin, lead, cobalt, and manganese. Tables are given for surface film thickness versus color for various times.

Intermediate coating layer for high temperature rubbing seals for rotary regenerators

DOEpatents

Schienle, James L.; Strangman, Thomas E.

1995-01-01

A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

Strain-tolerant ceramic coated seal

DOEpatents

Schienle, James L.; Strangman, Thomas E.

1994-01-01

A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. An array of discontinuous grooves is laser machined into the outer surface of the solid lubricant surface layer making the coating strain tolerant.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.

PubMed

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-12

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O 2 /Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O 2 /Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (I off ) of 3 pA, a high on/off current ratio of 2 × 10 7 , a high saturation mobility (μ sat ) of 66.7 cm 2 /V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (V th ) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

NASA Astrophysics Data System (ADS)

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-01

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

A Fast Responsive Ultraviolet Sensor from mSILAR-Processed Sn-ZnO

NASA Astrophysics Data System (ADS)

Thomas, Deepu; Vijayalakshmi, K. A.; Sadasivuni, Kishor Kumar; Thomas, Ajith; Ponnamma, Deepalekshmi; Cabibihan, John-John

2017-11-01

Microwave-assisted successive ionic layer adsorption and reaction was employed to synthesize Sn-ZnO (tin-doped zinc oxide), and its sensitivity to ultraviolet radiation is compared with zinc oxide (ZnO). The sensing films were made by the dip-coated method on an indium titanium oxide glass substrate, and the sensing performance was monitored using the 300-700 nm wavelength of UV-Vis light. Excellent sensitivity and recovery were observed for the Sn-doped ZnO sensor device, especially at 380 nm wavelength of ultraviolet (UV) light (response and recovery time 2.26 s and 8.63 s, respectively, at 5 V bias voltage). The variation in photocurrent with respect to dark and light illumination atmosphere was well illustrated based on the Schottky and inter-particle network effects. Doping of Sn on ZnO nanoparticles varied the surface roughness and crystallite size as observed from scanning electron microscopic and x-ray diffraction studies. Here, we demonstrate a simple and economical fabrication technique for designing a high-performance UV light sensor. The developed device works at room temperature with high durability and stability.

Post-annealing effect on optical absorbance of hydrothermally grown zinc oxide nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohar, Rahmat Setiawan; Djuhana, Dede; Imawan, Cuk

In this study, the optical absorbance of zinc oxide (ZnO) nanorods was investigated. The ZnO thin film were deposited on indium tin oxide (ITO) layers using ultrasonic spray pyrolysis (USP) method and then grown by hydrothermal method. In order to improve the optical absorbance, the ZnO nanorods were then post-annealed for one hour at three different of temperatures, namely 250, 400, and 500 °C. The X-ray diffraction (XRD) spectra and FESEM images show that the ZnO nanorods have the hexagonal wurtzite crystal structure and the increasing of post-annealing temperature resulted in the increasing of crystallite size from 38.2 nm to 48.4 nm.more » The UV-vis spectra shows that all samples of ZnO nanorods exhibited the identical sharp absorption edge at 390 nm indicating that all samples have the same bandgap. The post-annealing process seemed to decrease the optical absorbance in the region of 300-550 nm and increase the optical absorbance in the region of 550-700 nm..« less

40 CFR 471.11 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2013 CFR

2013-07-01

... SOURCE CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.11 Effluent limitations representing the... lead-tin-bismuth rolled with emulsions Antimony 0.068 0.030 Lead 0.010 0.005 Oil and grease 0.468 0.281... mg/off-kg (pounds per million off-pound) of lead-tin-bismuth rolled with soap solutions Antimony 0...

40 CFR 471.11 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2012 CFR

2012-07-01

... SOURCE CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.11 Effluent limitations representing the... lead-tin-bismuth rolled with emulsions Antimony 0.068 0.030 Lead 0.010 0.005 Oil and grease 0.468 0.281... mg/off-kg (pounds per million off-pound) of lead-tin-bismuth rolled with soap solutions Antimony 0...

40 CFR 471.12 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2014 CFR

2014-07-01

... CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.12 Effluent limitations representing the degree of... average mg/off-kg (pounds per million off-pounds) of lead-tin-bismuth rolled with emulsion Antimony 0.067... lead-tin-bismuth rolled with soap solutions Antimony 0.120 0.055 Lead 0.018 0.009 (c) Drawing spent...

40 CFR 471.11 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2014 CFR

2014-07-01

... SOURCE CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.11 Effluent limitations representing the... lead-tin-bismuth rolled with emulsions Antimony 0.068 0.030 Lead 0.010 0.005 Oil and grease 0.468 0.281... mg/off-kg (pounds per million off-pound) of lead-tin-bismuth rolled with soap solutions Antimony 0...

40 CFR 471.12 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2012 CFR

2012-07-01

... CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.12 Effluent limitations representing the degree of... average mg/off-kg (pounds per million off-pounds) of lead-tin-bismuth rolled with emulsion Antimony 0.067... lead-tin-bismuth rolled with soap solutions Antimony 0.120 0.055 Lead 0.018 0.009 (c) Drawing spent...

40 CFR 471.12 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-Tin-Bismuth Forming Subcategory § 471.12 Effluent limitations representing the degree of effluent... average mg/off-kg (pounds per million off-pounds) of lead-tin-bismuth rolled with emulsion Antimony 0.067... lead-tin-bismuth rolled with soap solutions Antimony 0.120 0.055 Lead 0.018 0.009 (c) Drawing spent...

40 CFR 471.12 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2010 CFR

2010-07-01

...-Tin-Bismuth Forming Subcategory § 471.12 Effluent limitations representing the degree of effluent... average mg/off-kg (pounds per million off-pounds) of lead-tin-bismuth rolled with emulsion Antimony 0.067... lead-tin-bismuth rolled with soap solutions Antimony 0.120 0.055 Lead 0.018 0.009 (c) Drawing spent...

40 CFR 471.12 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2013 CFR

2013-07-01

... CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.12 Effluent limitations representing the degree of... average mg/off-kg (pounds per million off-pounds) of lead-tin-bismuth rolled with emulsion Antimony 0.067... lead-tin-bismuth rolled with soap solutions Antimony 0.120 0.055 Lead 0.018 0.009 (c) Drawing spent...

Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

PubMed

Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

2016-06-28

Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

Feasibility Study on a Process for Electroless Metal Deposition in Pits and Fissures of Teeth for Use in Preventive Dentistry.

DTIC Science & Technology

1980-08-01

been used in topical fluoride solutions applied to prevent caries . The use of SnF 2 . and similar chemical compounds, in the plating process appears to...Methods Tin fluoride solutions are prepared by dissolving SnF 2 in demineralized water at concentrations of 1, 5, 5.7, and 10%. The pH ranges from...saturated FeSO4 with or without 1 gpl thiourea a. .4 34 REFERENCES 1. P. Gron, "Chemistry of Topical Fluorides ", Caries Res. 11 (Suppl. 1): 172-204

Interfacial and Electrode Modifications in P3HT:PC61BM based Organic Solar Cells: Devices, Processing and Characterization

NASA Astrophysics Data System (ADS)

Das, Sayantan

The inexorable upsurge in world’s energy demand has steered the search for newer renewable energy sources and photovoltaics seemed to be one of the best alternatives for energy production. Among the various photovoltaic technologies that emerged, organic/polymer photovoltaics based on solution processed bulk-heterojunctions (BHJ) of semiconducting polymers has gained serious attention owing to the use of inexpensive light-weight materials, exhibiting high mechanical flexibility and compatibility with low temperature roll-to-roll manufacturing techniques on flexible substrates. The most widely studied material to date is the blend of regioregular P3HT and PC61BM used as donor and acceptor materials. The object of this study was to investigate and improve the performance/stability of the organic solar cells by use of inexpensive materials. In an attempt to enhance the efficiency of organic solar cells, we have demonstrated the use of hexamethyldisilazane (HMDS) modified indium tin oxide (ITO) electrode in bulk heterojunction solar cell structure The device studies showed a significant enhancement in the short-circuit current as well as in the shunt resistance on use of the hexamethyldisilazane (HMDS) layer. In another approach a p-type CuI hole-transport layer was utilized that could possibly replace the acidic PEDOT:PSS layer in the fabrication of high-efficiency solar cells. The device optimization was done by varying the concentration of CuI in the precursor solution which played an important role in the efficiency of the solar cell devices. Recently a substantial amount of research has been focused on identifying suitable interfacial layers in organic solar cells which has efficient charge transport properties. It was illustrated that a thin layer of silver oxide interfacial layer showed a 28% increase in power conversion efficiency in comparison to that of the control cell. The optoelectronic properties and morphological features of indium-free ZnO/Ag/MoOx electrodes was also studied. Organic solar cells on these composite electrodes revealed good optical and electrical properties, making them a promising alternative indium free and PEDOT:PSS-free organic solar cells. Lastly, inverted solar cells utilizing zinc oxide and yttrium doped zinc oxide electron transport was also created and their device properties revealed that optimum annealing conditions and yttrium doping was essential to obtain high efficiency solar cells.

Aqueous rechargeable zinc/sodium vanadate batteries with enhanced performance from simultaneous insertion of dual carriers.

PubMed

Wan, Fang; Zhang, Linlin; Dai, Xi; Wang, Xinyu; Niu, Zhiqiang; Chen, Jun

2018-04-25

Rechargeable aqueous zinc-ion batteries are promising energy storage devices due to their high safety and low cost. However, they remain in their infancy because of the limited choice of positive electrodes with high capacity and satisfactory cycling performance. Furthermore, their energy storage mechanisms are not well established yet. Here we report a highly reversible zinc/sodium vanadate system, where sodium vanadate hydrate nanobelts serve as positive electrode and zinc sulfate aqueous solution with sodium sulfate additive is used as electrolyte. Different from conventional energy release/storage in zinc-ion batteries with only zinc-ion insertion/extraction, zinc/sodium vanadate hydrate batteries possess a simultaneous proton, and zinc-ion insertion/extraction process that is mainly responsible for their excellent performance, such as a high reversible capacity of 380 mAh g -1 and capacity retention of 82% over 1000 cycles. Moreover, the quasi-solid-state zinc/sodium vanadate hydrate battery is also a good candidate for flexible energy storage device.

PHASE DIAGRAM FOR THE SYSTEM TITANIUM-TIN (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kornilov, I.I.; Nartova, T.T.

1960-03-01

Differential thermal analysis, microstructural analyses, and determinations of hardness values and electric resistance were used to construct a diagram of state for the binary system Ti-Sn up to the composition of the compound Ti/sub 3/Sn (from 0 to 25 at.% Sn). Analyses of the thermograms showed that all conversions proceeding with the absorption of heat could be detected on the heating curves. Tin lowers the temperature of conversion of titunium with 5.0 at.% tin first to a minimum at 860 tained C which then increases to 890 tained C at higher tin contents. A peritectoid reaction ( alpha / submore » 2/ were ob ore resistant t + ) takes place with a conversion temperature at 890 tained C. A HF-HNO/sub 3/-glycerin etch showed a single-phase homogeneous structure of an alpha -solid solution with alloys containing up to 9 at.% Q. The amount of a second -phase increases with increasing tin content until a single-phase structure of a -solid solution of the compound Ti/sub 3/Sn is noted with alloys containing 23 to 25 at.% Sn. Alloys containing 8 to 22.5 at.% Sn undergo a peritectoid reaction, at a temperature of 890 tained C as shown by thermal analyses and by microstructural analyses of samples quenched frorn above and below the conversion temperature. A study of the microstructure of quenched alloys showed that the solubility of tin in ore resistant t -titanium increases from 8 at.% Sn at 890 tained C to 10.5 at.% Sn at 1100 tained C. X-ray analyses of annealed samples of alloy showed only the lines of an alpha solid solution for 5, 8, 9 at.% Sn, a -solid solution for 23 at.% Sn (close to the composition Ti/sub 3/Sn), and an alpha and mixed phase for a 15 at.% Sn. Vickers hardness numbers were determined with a diamond pyramid at a loading of 10 kg. The hardness increases smoothly with increasing tin content to a maximum at the saturation solubility of the tin in the alpha - or ore resistant t -solid solution. The hardness decreases smoothly with the appearance of the -phase until it attains a minimum at the composition of the compound Ti/sub 3/Sn. The specific electric resistance increases with an increase of tin in the solid solution of alpha -titanium. The rate of increase of the specific electric resistance decreases markedly with the appearance of the -phase. The electric resistance of an alloy with 14.3 at.% Sn was studied as a function of temperature from room temperature to 1100 tained C in special vacuum equipment. A sharp drop in electric resistance a; 890 tained C confirmed the existence of a peritectoid reaction in the system Ti-Sn. (TTT)« less

Selective separation of copper over solder alloy from waste printed circuit boards leach solution.

PubMed

Kavousi, Maryam; Sattari, Anahita; Alamdari, Eskandar Keshavarz; Firozi, Sadegh

2017-02-01

The printed circuit boards (PCBs) from electronic waste are important resource, since the PCBs contain precious metals such as gold, copper, tin, silver, platinum and so forth. In addition to the economic point of view, the presence of lead turns this scrap into dangerous to environment. This study was conducted as part of the development of a novel process for selective recovery of copper over tin and lead from printed circuit boards by HBF 4 leaching. In previous study, Copper with solder alloy was associated, simultaneously were leached in HBF 4 solution using hydrogen peroxide as an oxidant at room temperature. The objective of this study is the separation of copper from tin and lead from Fluoroborate media using CP-150 as an extractant. The influence of organic solvent's concentration, pH, temperature and A/O phase ratio was investigated. The possible extraction mechanism and the composition of the extracted species have been determined. The separation factors for these metals using this agent are reported, while efficient methods for separation of Cu (II) from other metal ions are proposed. The treatment of leach liquor for solvent extraction of copper with CP-150 revealed that 20% CP-150 in kerosene, a 30min period of contact time, and a pH of 3 were sufficient for the extraction of Cu(II) and 99.99% copper was recovered from the leached solution. Copyright © 2016. Published by Elsevier Ltd.

Corrosion of Cu-xZn alloys in slightly alkaline chloride solutions studied by stripping voltammetry and microanalysis.

PubMed

Milosev, I; Minović, A

2001-01-01

The mechanism of corrosion of Cu-xZn alloys (x = 10-40 wt %) in slightly alkaline chloride solutions was investigated by analysing solid reaction products by energy dispersive X-ray analysis (EDS) and dissolved reaction products by differential anodic pulse stripping (DAPS) voltammetry. The corrosion process was studied under open circuit and under potentiostatic conditions at selected potentials. Pure metals were studied comparatively so that an interacting effect of particular metal components in the alloy could be determined. All four Cu-xZn alloys show an improved behaviour compared to pure metals. Under open-circuit condition both components dissolve simultaneously in the solution. With increasing immersion time the preferential, dissolution of zinc in the solution becomes pronounced. It is the highest for Cu-10Zn and the lowest for Cu-30Zn alloy. Under potentiostatic control the dissolution mechanism depends on the electrode potential and changes from exclusive dissolution of zinc to simultaneous dissolution of both components with preferential dissolution of zinc. The latter decreases, as the electrode potential becomes more positive.

40 CFR 471.11 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2010 CFR

2010-07-01

... CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.11 Effluent limitations representing the degree of... lead-tin-bismuth rolled with emulsions Antimony 0.068 0.030 Lead 0.010 0.005 Oil and grease 0.468 0.281... mg/off-kg (pounds per million off-pound) of lead-tin-bismuth rolled with soap solutions Antimony 0...

40 CFR 471.11 - Effluent limitations representing the degree of effluent reduction attainable by the application...

Code of Federal Regulations, 2011 CFR

2011-07-01

... CATEGORY Lead-Tin-Bismuth Forming Subcategory § 471.11 Effluent limitations representing the degree of... lead-tin-bismuth rolled with emulsions Antimony 0.068 0.030 Lead 0.010 0.005 Oil and grease 0.468 0.281... mg/off-kg (pounds per million off-pound) of lead-tin-bismuth rolled with soap solutions Antimony 0...

The Installation Restoration Program Toxicology Guide. Volume 1

DTIC Science & Technology

1989-07-01

affinity for adipose tissue , which is more prevalent in women and would result in less unchanged chloroform and more carbon dioxide exhaled. This...magnesium, potassium, sodium, tin, zinc , and their alloys. ADI Acceptable daily intake ADL Arthur D. Little, Inc. Adenocarcinoma A malignant tumor...originating in glandular or ductal epithelium. Adenoma A benign growth of glandular tissue . ae Acid equivalent Aerosol A suspension or dispersion of small

40 CFR 437.11 - Effluent limitations attainable by the application of the best practicable control technology...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 1.45 Silver 0.120 0.0351 Tin 0.409 0.120 Titanium 0.0947 0.0618 Vanadium 0.218 0.0662 Zinc 2.87 0.641 1 mg/L (ppm). 2 Within the range 6 to 9. (b) The following in-plant limitations apply to metal-bearing wastewater containing cyanide: In-Plant Limitations Regulatedparameter Maximum daily 1 Maximum...

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

The use of a rotating cylinder electrode to recover zinc from rinse water generated by the electroplating industry.

PubMed

Matlalcuatzi, Sairi; Nava, José L

2012-01-01

This work concerns the application of a laboratory scale rotating cylinder electrode (RCE) to recover zinc from rinse water generated by the electrolytic zinc process (initially 1,300, 4,400, 50, 20 mg L(-1) of Zn(II), Fe(III), Ag(I) and Cr(VI), respectively, at pH 2), although it is also applicable to other electroplating industries. Experimental results demonstrated the convenience of the removal of ferric ions, as (Fe(OH)(3(s))) by a pH adjustment to 4, before zinc electro recovery on the RCE. The generation of smooth zinc deposits on the RCE was obtained at Reynolds numbers within the range of 15,000 ≤ Re ≤ 124,000 and limiting current densities (J(L)) in the interval of -4.8 to -13 mA cm(-2). The zinc recovery reached a conversion of 67% in 90 min of electrolysis for Re = 124,000 and J = -13 mA cm(-2), 21% current efficiency, and energy consumption of 9.5 kWh m(-3). The treated solution can be recycled back through the same rinsing process.

Biosorption of lead, cadmium, and zinc by Citrobacter strain MCM B-181: Characterization studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puranik, P.R.; Paknikar, K.M.

1999-03-01

The biosorption process for removal of lead, cadmium, and zinc by Citrobacter strain MCM B-181, a laboratory isolate, was characterized. Effects of environmental factors and growth conditions on metal uptake capacity were studied. Pretreatment of biomass with chemical agents increased cadmium sorption efficiency; however, there was no significant enhancement in lead and zinc sorption capacity. Metal sorption by Citrobacter strain MCM B-181 was found to be influenced by the pH of the solution, initial metal concentration, biomass concentration, and type of growth medium. The metal sorption process was not affected by the age of the culture or change in temperature.more » Equilibrium metal sorption was found to fit the Langmuir adsorption model. Kinetic studies showed that metal uptake by Citrobacter strain MCm B-181 was a fast process, requiring < 20 min to achieve > 90% adsorption efficiency. The presence of cations reduced lead, zinc, and cadmium sorption to the extent of 11.8%, 84.3%, and 33.4%, respectively. When biomass was exposed to multimetal solutions, metals were adsorbed in the order Co{sup 2+} < Ni{sup 2+} < Cd{sup 2+} < Cu{sup 2+}, Zn{sup 2+} < Pb{sup 2+}. A new mathematical model used for batch kinetic studies was found to be highly useful in prediction of experimentally obtained metal concentration profiles as a function of time.« less

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

2014-10-01

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

Properties of solid solutions, doped film, and nanocomposite structures based on zinc oxide

NASA Astrophysics Data System (ADS)

Lashkarev, G. V.; Shtepliuk, I. I.; Ievtushenko, A. I.; Khyzhun, O. Y.; Kartuzov, V. V.; Ovsiannikova, L. I.; Karpyna, V. A.; Myroniuk, D. V.; Khomyak, V. V.; Tkach, V. N.; Timofeeva, I. I.; Popovich, V. I.; Dranchuk, N. V.; Khranovskyy, V. D.; Demydiuk, P. V.

2015-02-01

A study of the properties of materials based on the wide bandgap zinc oxide semiconductor, which are promising for application in optoelectronics, photovoltaics and nanoplasmonics. The structural and optical properties of solid solution Zn1-xCdxO films with different cadmium content, are studied. The samples are grown using magnetron sputtering on sapphire backing. Low-temperature photoluminescence spectra revealed emission peaks associated with radiative recombination processes in those areas of the film that have varying amounts of cadmium. X-ray phase analysis showed the presence of a cadmium oxide cubic phase in these films. Theoretical studies of the solid solution thermodynamic properties allowed for a qualitative interpretation of the observed experimental phenomena. It is established that the growth of the homogeneous solid solution film is possible only at high temperatures, whereas regions of inhomogeneous composition can be narrowed through elastic deformation, caused by the mismatch of the film-backing lattice constants. The driving forces of the spinodal decomposition of the Zn1-xCdxO system are identified. Fullerene-like clusters of Znn-xCdxOn are used to calculate the bandgap and the cohesive energy of ZnCdO solid solutions. The properties of transparent conductive ZnO films, doped with Group III donor impurities (Al, Ga, In), are examined. It is shown that oxygen vacancies are responsible for the hole trap centers in the zinc oxide photoconductivity process. We also examine the photoluminescence properties of metal-ZnO nanocomposite structures, caused by surface plasmons.

The effect of gypsum products and separating materials on the typography of denture base materials.

PubMed

Firtell, D N; Walsh, J F; Elahi, J M

1980-09-01

The typography of polymethyl methacrylate processed against various gypsum products coated with various separating materials was studied under an SEM. Tinfoil and two commercial tin foil substitutes were used as separating material during processing, and the surfaces of the resulting acrylic resin forms were studied for topographical differences. Tinfoil and alpha 2 hemihydrates produced the smoothest surfaces. As a practical solution, a good quality tinfoil substitute and alpha 1 hemihydrate could be used when processing polymethyl methacrylate resin.

Luminescent zinc(ii) and copper(i) complexes for high-performance solution-processed monochromic and white organic light-emitting devices.

PubMed

Cheng, Gang; So, Gary Kwok-Ming; To, Wai-Pong; Chen, Yong; Kwok, Chi-Chung; Ma, Chensheng; Guan, Xiangguo; Chang, Xiaoyong; Kwok, Wai-Ming; Che, Chi-Ming

2015-08-01

The synthesis and spectroscopic properties of luminescent tetranuclear zinc(ii) complexes of substituted 7-azaindoles and a series of luminescent copper(i) complexes containing 7,8-bis(diphenylphosphino)-7,8-dicarba- nido -undecaborate ligand are described. These complexes are stable towards air and moisture. Thin film samples of the luminescent copper(i) complexes in 2,6-dicarbazolo-1,5-pyridine and zinc(ii) complexes in poly(methyl methacrylate) showed emission quantum yields of up to 0.60 (for Cu-3 ) and 0.96 (for Zn-1 ), respectively. Their photophysical properties were examined by ultrafast time-resolved emission spectroscopy, temperature dependent emission lifetime measurements and density functional theory calculations. Monochromic blue and orange solution-processed OLEDs with these Zn(ii) and Cu(i) complexes as light-emitting dopants have been fabricated, respectively. Maximum external quantum efficiency (EQE) of 5.55% and Commission Internationale de l'Eclairage (CIE) coordinates of (0.16, 0.19) were accomplished with the optimized Zn-1 -OLED while these values were, respectively 15.64% and (0.48, 0.51) for the optimized Cu-3 -OLED. Solution-processed white OLEDs having maximum EQE of 6.88%, CIE coordinates of (0.42, 0.44), and colour rendering index of 81 were fabricated by using these luminescent Zn(ii) and Cu(i) complexes as blue and orange light-emitting dopant materials, respectively.

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

DOEpatents

Chen, Wen S.; Stewart, John M.

1992-01-07

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Recovery of Metal Values from Spent Zinc-Carbon Dry Cell Batteries

NASA Astrophysics Data System (ADS)

Khan, Majharul Haque; Gulshan, Fahmida; Kurny, A. S. W.

2013-04-01

Spent zinc-carbon dry cell batteries were characterized in the process of recovery of metal values. Zinc, manganese and steel were the major metallic materials constituting 63 % of the weight of spent batteries. Different components of the spent batteries were separately processed to extract the metallic values. A maximum of 92 % of total amount of zinc contained in the anodes could be extracted with a purity of over 99.0 % from the anodes by heating at 600 °C for 10 min in presence of 12 % NH4Cl flux. Spent electrolyte paste containing manganese and zinc as major metallic elements, was leached in sulfuric acid solution in presence of hydrogen peroxide as a reducing agent. The optimum condition for leaching was found to be concentration of sulfuric acid: 2.5 M, concentration of hydrogen peroxide: 10 %, temperature: 60 °C, stirring speed: 600 rpm and solid/liquid ratio 1:12. A maximum of 88 % manganese contained in the paste could be dissolved within 27 min of leaching under the optimized conditions. Dissolution of zinc under the same conditions was 97 %. A maximum of 69.89 % of manganese and 83.29 % of zinc contained in the leach liquor could be precipitated in the form of manganese carbonate and zinc oxalate.

Properties of a new type Al/Pb-0.3%Ag alloy composite anode for zinc electrowinning

NASA Astrophysics Data System (ADS)

Yang, Hai-tao; Liu, Huan-rong; Zhang, Yong-chun; Chen, Bu-ming; Guo, Zhong-cheng; Xu, Rui-dong

2013-10-01

An Al/Pb-0.3%Ag alloy composite anode was produced via composite casting. Its electrocatalytic activity for the oxygen evolution reaction and corrosion resistance was evaluated by anodic polarization curves and accelerated corrosion test, respectively. The microscopic morphologies of the anode section and anodic oxidation layer during accelerated corrosion test were obtained by scanning electron microscopy. It is found that the composite anode (hard anodizing) displays a more compact interfacial combination and a better adhesive strength than plating tin. Compared with industrial Pb-0.3%Ag anodes, the oxygen evolution overpotentials of Al/Pb-0.3%Ag alloy (hard anodizing) and Al/Pb-0.3%Ag alloy (plating tin) at 500 A·m-2 were lower by 57 and 14 mV, respectively. Furthermore, the corrosion rates of Pb-0.3%Ag alloy, Al/Pb-0.3%Ag alloy (hard anodizing), and Al/Pb-0.3%Ag alloy (plating tin) were 13.977, 9.487, and 11.824 g·m-2·h-1, respectively, in accelerated corrosion test for 8 h at 2000 A·m-2. The anodic oxidation layer of Al/Pb-0.3%Ag alloy (hard anodizing) is more compact than Pb-0.3%Ag alloy and Al/Pb-0.3%Ag alloy (plating tin) after the test.

Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

2015-12-01

Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

Effect of multiple deposition of NiO layer on the performance of inverted type organic solar cell based on ZnO/P3HT:PCBM

NASA Astrophysics Data System (ADS)

Sabri, Nasehah Syamin; Lim, Eng Liang; Yap, Chi Chin; Yahaya, Muhammad; Salleh, Muhamad Mat; Jumali, Mohammad Hafizuddin Haji

2017-05-01

In this work, the effect of multiple deposition of nickel oxide (NiO) hole transport layer (HTL) on the performance of inverted type organic solar cell with a configuration of fluorine tin oxide (FTO)/zinc oxide (ZnO) nanorods/ poly(3-hexylthiopene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/NiO/silver (Ag) was investigated. The NiO nanoparticles solution was spin-coated on top of the photoactive layer (P3HT:PCBM) prior to deposition of Ag electrode. Different numbers of NiO layers (1, 2, and 4) were deposited on the photoactive layer to obtain the optimum surface morphology of HTL. The device with 2 layers of NiO exhibited the optimum power conversion efficiency of 1.10%. It is believed that the optimum NiO deposition layer gives the complete coverage at photoactive layer and forms ohmic contact between the photoactive layer and Ag electrode.

Optical response of mixed methylammonium lead iodide and formamidinium tin iodide perovskite thin films

DOE PAGES

Ghimire, Kiran; Zhao, Dewei; Yan, Yanfa; ...

2017-07-13

Here, mixed tin (Sn) and lead (Pb) based perovskite thin films have been prepared by solution processing combining methylammonium lead iodide (MAPbI 3) and formamidinium tin iodide (FASnI 3) precursors. Optical response in the form of complex dielectric function (ε = ε 1 + iε 2) spectra and absorption coefficient (α) spectra of (FASnI 3) 1-x(MAPbI 3) x based perovskite films have been extracted over a spectral range 0.74 to 5.89 eV using spectroscopic ellipsometry. Absorption band edge energy changes as a function of composition for films including FASnI 3, MAPbI 3, and mixed x = 0.20, 0.35, 0.40, andmore » 0.6 (FASnI 3) 1-x(MAPbI 3) x perovskites. (FASnI 3) 0.60(MAPbI 3) 0.4 is found to have the minimum absorption band edge energy near ~1.2 eV.« less

CESIUM RECOVERY FROM AQUEOUS SOLUTIONS

DOEpatents

Goodall, C.A.

1960-09-13

A process is given for precipitating cesium on zinc ferricyanide (at least 0.0004 M) from aqueous solutions containing mineral acid in a concentration of from 0.2 N acidity to 0.61 N acid-deficiency and advantageously, but not necessarily, also aluminum nitrate in a concentration of from l to 2.5 M.

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Recovery of yttrium from fluorescent powder of cathode ray tube, CRT: Zn removal by sulphide precipitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Innocenzi, Valentina, E-mail: valentina.innocenzi1@univaq.it; De Michelis, Ida; Ferella, Francesco

2013-11-15

Highlights: • Treatment of fluorescent powder of CRT waste. • Factorial experimental designs to study acid leaching of fluorescent powder and the purification of leach liquors. • Recover of yttrium by precipitation using oxalic acid. • Suitable flowsheet to recover yttrium from fluorescent powder. - Abstract: This work is focused on the recovery of yttrium and zinc from fluorescent powder of cathode ray tube (CRT). Metals are extracted by sulphuric acid in the presence of hydrogen peroxide. Leaching tests are carried out according to a 2{sup 2} full factorial plan and the highest extraction yields for yttrium and zinc equalmore » to 100% are observed under the following conditions: 3 M of sulphuric acid, 10% v/v of H{sub 2}O{sub 2} concentrated solution at 30% v/v, 10% w/w pulp density, 70 °C and 3 h of reaction. Two series of precipitation tests for zinc are carried out: a 2{sup 2} full factorial design and a completely randomized factorial design. In these series the factors investigated are pH of solution during the precipitation and the amount of sodium sulphide added to precipitate zinc sulphide. The data of these tests are used to describe two empirical mathematical models for zinc and yttrium precipitation yields by regression analysis. The highest precipitation yields for zinc are obtained under the following conditions: pH equal to 2–2.5% and 10–12% v/v of Na{sub 2}S concentrated solution at 10% w/v. In these conditions the coprecipitation of yttrium is of 15–20%. Finally further yttrium precipitation experiments by oxalic acid on the residual solutions, after removing of zinc, show that yttrium could be recovered and calcined to obtain the final product as yttrium oxide. The achieved results allow to propose a CRT recycling process based on leaching of fluorescent powder from cathode ray tube and recovery of yttrium oxide after removing of zinc by precipitation. The final recovery of yttrium is 75–80%.« less

REMOVAL OF RADIOACTIVE IONS FROM WATERS

DOEpatents

Silker, W.B.

1962-04-10

A process for removing neutron-reaction products, such as phosphorus, arsenic, manganese, copper, zinc, lanthanides, and actinides, from aqueous solutions by sorption on particles of aluminum metal is described. (AEC)

Electric double-layer capacitor based on zinc metaphosphate glass-derived hydrogel

NASA Astrophysics Data System (ADS)

Akamatsu, Takafumi; Kasuga, Toshihiro; Nogami, Masayuki

2006-04-01

The present work reports the electrochemical characteristics of an electric double-layer capacitor (EDC) cell with an electrolyte consisting of a glass-derived zinc metaphosphate hydrogel (ZP gel) or H3PO4 solution. The EDC cell showed specific discharge capacities of 2.06 and 3.21F/g using the ZP gel and H3PO4 solution, respectively. The EDC cell performed higher voltage retentionability for self-discharge behavior after constant voltage using the ZP gel (0.83V after 24h) than using H3PO4 solution (0.45V after 24h). Self-discharge behaviors of the ZP gel and H3PO4 solution were controlled by a diffusion and current leakage process, respectively. These results show that the ZP gel has a great potential for practical use as an EDC electrolyte.

Electrical properties of solution processed highly transparent ZnO TFT with organic gate dielectric

NASA Astrophysics Data System (ADS)

Pandya, Nirav C.; Joshi, Nikhil G.; Trivedi, U. N.; Joshi, U. S.

2013-02-01

All oxide thin film transistors (TFT) with zinc oxide active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Thin film transistors (TFTs) with amorphous zinc oxide as channel layers and poly-vinyl alcohol as dielectric layers were fabricated at low temperatures by chemical solution deposition (CSD). Atomic force microscopy (AFM) confirmed nano grain size with fairly smooth surface topography. Very small leakage currents were achieved in the transfer curves, while soft saturation was observed in the output current voltage (I-V) characteristics of the device. Optical transmission of better than 87% in the visible region was estimated, which is better than the organic gate insulator based ZnO TFTs reported so far. Our results offer lot of promise to TFT based display and optoelectronics.

Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

PubMed

Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

2013-05-07

We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

A Study of GSZO TFTs for Fabrication on Plastic Substrates

DTIC Science & Technology

2014-01-01

GalliunTin Zinc oxide, Thin film transistors,RF sputerring, Transparent amorphous oxide semiconductors, Xray reflectances, I-V, C - V, Rutherford...19a. NAME OF RESPONSIBLE PERSON 19b. TELEPHONE NUMBER Shanthi Iyer Robert Alston 611104 c . THIS PAGE The public reporting burden for this...performance for the GSZO channel deposition and annealing temperature below 140 ° C are sensitive to the deposition parameters. The oxygen deficient deposited

Prospects and performance limitations for Cu-Zn-Sn-S-Se photovoltaic technology.

PubMed

Mitzi, David B; Gunawan, Oki; Todorov, Teodor K; Barkhouse, D Aaron R

2013-08-13

While cadmium telluride and copper-indium-gallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr⁻¹ production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

Insoluble zinc, cupric and tin pyrophosphates inhibit the formation of volatile sulphur compounds.

PubMed

Jonski, G; Young, A; Wåler, S M; Rölla, G

2004-10-01

Oral malodour is mainly a result of the production of volatile sulphur compounds (VSC). The present study was concerned with investigating the anti-VSC effect of insoluble pyrophosphates (PP) of zinc, copper(II) and tin(II). The hypothesis to be tested was that the sulphide anions produced when VSC are solubilized in water have a higher affinity for the respective metal ions than the PP anion. The anti-VSC effects of insoluble PP were compared with the corresponding soluble metal salts using three in vitro methods: saliva putrefaction; dialysis of a suspension of PP and saliva against water; and analysis of water containing hydrogen sulphide and methyl mercaptan gases, and gases in the headspace. The levels of VSC were analysed by gas chromatography in the first and third methods, and released metal ions were analysed by atomic absorption spectroscopy in the second. The results showed that: the insoluble metal PP inhibited VSC formation in saliva by 99-100%; under dialysis, only minute amounts of metal ions are released from the combination of PP and saliva; and the PP lost their metal cations in water containing dissolved gases and inhibited VSC formation. Hence, the results support the experimental hypothesis. Sulphide ions are obviously very strong ligands for these metal ions.

Electrical properties of thin film transistors with zinc tin oxide channel layer

NASA Astrophysics Data System (ADS)

Hong, Seunghwan; Oh, Gyujin; Kim, Eun Kyu

2017-10-01

We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 °C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm2/V·s, specific resistivity of about 2 × 102 Ω·cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm2/V·s and on-off ratio ( I on / I off ) of 104 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 °C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.

Sacrificial component fabrication for optimised production of micro-vascular polymer composite

NASA Astrophysics Data System (ADS)

Dalton, B.; Dixon, D.; McIlhagger, A.; Archer, E.

2015-02-01

Smart functional materials are a viable future goal for advanced applications in aerospace, space and medical applications. In this work micro-vascular polymer composite systems have been developed using sacrificial fibres produced from catalyst loaded Poly(lactic acid). The sacrificial fibres have been produced via a published technique which treated PLA in a solvent catalyst mixture of 60% Trifluoroethanol, 40% H2O dispersed with 10 wt% tin (II) oxalate catalyst. A second process of polymer extrusion of PLA using graded fill contents of tin (II) oxalate has also been developed for the up scaled production of fibres as an alternative to solution treatment. Thermal analysis (TGA) was used to compare sacrificial fibre specimens. PLA fibres produced via the polymer extrusion method outperformed solution treated fibres displaying a lower degradation onset temperature (average 25°C lower), higher degradation rates (observed through a derivative curve comparison) and lower residual catalyst content (0.67% solvent treated fibre against 0.16% extruded fibre). The continuous extrusion process is solvent free and is suitable for high volume production. This work has been carried out to fully understand the fabrication issues with sacrificial components.

Temperature effect on the structure and conformational fluctuations in two zinc knuckles from the mouse mammary tumor virus.

PubMed

Nedjoua, Drici; Krallafa, Abdelghani Mohamed

2018-06-01

Zinc fingers are small protein domains in which zinc plays a structural role, contributing to the stability of the zinc-peptide complex. Zinc fingers are structurally diverse and are present in proteins that perform a broad range of functions in various cellular processes, such as replication and repair, transcription and translation, metabolism and signaling, cell proliferation, and apoptosis. Zinc fingers typically function as interaction modules and bind to a wide variety of compounds, such as nucleic acids, proteins, and small molecules. In this study, we investigated the structural properties, in solution, of the proximal and distal zinc knuckles of the nucleocapsid (NC) protein from the mouse mammary tumor virus (MMTV) (MMTV NC). For this purpose, we performed a series of molecular dynamics simulations in aqueous solution at 300 K, 333 K, and 348 K. The temperature effect was evaluated in terms of root mean square deviation of the backbone atoms and root mean square fluctuation of the coordinating residue atoms. The stability of the zinc coordination sphere was analyzed based upon the time profile of the interatomic distances between the zinc ions and the chelator atoms. The results indicate that the hydrophobic character of the proximal zinc finger is dominant at 333 K. The low mobility of the coordinating residues suggests that the strong electrostatic effect exerted by the zinc ion on its coordinating residues is not influenced by the increase in temperature. The evolution of the structural parameters of the coordination sphere of the distal zinc finger at 300 K gives us a reasonable picture of the unfolding pathway, as proposed by Bombarda and coworkers (Bombarda et al., 2005), which can predict the binding order of the four conserved ligand-binding residues. Our results support the conclusion that the structural features can vary significantly between the two zinc knuckles of MMTV NC. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effect of Growth Parameters on SnO2 Nanowires Growth by Electron Beam Evaporation Method

NASA Astrophysics Data System (ADS)

Rakesh Kumar, R.; Manjula, Y.; Narasimha Rao, K.

2018-02-01

Tin oxide (SnO2) nanowires were synthesized via catalyst assisted VLS growth mechanism by the electron beam evaporation method at a growth temperature of 450 °C. The effects of growth parameters such as evaporation rate of Tin, catalyst film thickness, and different types of substrates on the growth of SnO2 nanowires were studied. Nanowires (NWs) growth was completely seized at higher tin evaporation rates due to the inability of the catalyst particle to initiate the NWs growth. Nanowires diameters were able to tune with catalyst film thickness. Nanowires growth was completely absent at higher catalyst film thickness due to agglomeration of the catalyst film. Optimum growth parameters for SnO2 NWs were presented. Nanocomposites such as Zinc oxide - SnO2, Graphene oxide sheets- SnO2 and Graphene nanosheets-SnO2 were able to synthesize at a lower substrate temperature of 450 °C. These nanocompsoites will be useful in enhancing the capacity of Li-ion batteries, the gas sensing response and also useful in increasing the photo catalytic activity.

TREATMENT FOR IMPROVING THE OPERATION OF STRONG BASE ANION EXCHANGE RESINS

DOEpatents

Stevenson, P.C.

1960-11-29

A process is offered for improving quaternary ammonium type strongly basic anion exchange resins so that centain zinc and cadmium residues, which normally stick to and "poison" this type of resin, can be removed by elution. Specifically, the resin as obtained commercially is treated with an aqueous solution of sodium hydroxide of about 1 to 4 M concentration by heating therein and periodically adding small amounts of oxidizing agent selected from hydrogen peroxide, sodium peroxide and hypochlorite. Zinc and cadmium values may then be adsorbed onto the resin from a 0.1 to 3 M HCl and thereafter eluted therefrom with very dilute HCl solutions.

Self-consistent calculations for the electronic structure of a vacancy in copper. A solution of the embedding problem

NASA Astrophysics Data System (ADS)

Zeller, R.; Braspenning, P. J.

1982-06-01

The charge density and the local density of states for a vacancy in Cu and for the first shell of Cu neighbours are calculated by the KKR-Green's function technique. The muffin-tin potentials for the vacancy and the neighbour shell atoms are determined self-consistently in the local density approximation of density functional theory. By the use of the proper host Green's function the embedding of this cluster of 13 perturbed muffin-tins into the infinite array of bulk Cu muffin-tin potentials is described rigorously, thus representing a solution of the embedding problem. The calculations demonstrate a rather large charge transfer of 1.1 electrons from the first neighbour shell to the vacancy.

Development of solution-processed nanowire composites for opto-electronics

DOE PAGES

Ginley, David S.; Aggarwal, Shruti; Singh, Rajiv; ...

2016-12-20

Here, silver nanowire-based contacts represent one of the major new directions in transparent contacts for opto-electronic devices with the added advantage that they can have Indium-Tin-Oxide-like properties at substantially reduced processing temperatures and without the use of vacuum-based processing. However, nanowires alone often do not adhere well to the substrate or other film interfaces; even after a relatively high-temperature anneal and unencapsulated nanowires show environmental degradation at high temperature and humidity. Here we report on the development of ZnO/Ag-nanowire composites that have sheet resistance below 10 Ω/sq and >90% transmittance from a solution-based process with process temperatures below 200 °C.more » These films have significant applications potential in photovoltaics and displays.« less

Spherical nitroguanidine process

DOEpatents

Sanchez, John A.; Roemer, Edward L.; Stretz, Lawrence A.

1990-01-01

A process of preparing spherical high bulk density nitroguanidine by dissing low bulk density nitroguanidine in N-methyl pyrrolidone at elevated temperatures and then cooling the solution to lower temperatures as a liquid characterized as a nonsolvent for the nitroguanidine is provided. The process is enhanced by inclusion in the solution of from about 1 ppm up to about 250 ppm of a metal salt such as nickel nitrate, zinc nitrate or chromium nitrate, preferably from about 20 to about 50 ppm.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

PubMed

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles

NASA Astrophysics Data System (ADS)

Paik, Young Hun; Shokri Kojori, Hossein; Kim, Sung Jin

2016-02-01

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Fangmei; Sun, Jia; Qian, Chuan; Hu, Xiaotao; Wu, Han; Huang, Yulan; Yang, Junliang

2016-09-01

Solution-processed thin-film transistors (TFTs) are the essential building blocks for manufacturing the low-cost and large-area consumptive electronics. Herein, solution-processed TFTs based on the composites of zinc oxide (ZnO) nanoparticles and single-walled carbon nanotubes (SWCNTs) were fabricated by the methods of spin-coating and doctor-blading. Through controlling the weight of SWCNTs, the ZnO/SWCNTs TFTs fabricated by spin-coating demonstrated a field-effect mobility of 4.7 cm2/Vs and a low threshold voltage of 0.8 V, while the TFTs devices fabricated by doctor-blading technique showed reasonable electrical performance with a mobility of 0.22 cm2/Vs. Furthermore, the ion-gel was used as an efficient electrochemical gate dielectric because of its large electric double-layer capacitance. The operating voltage of all the TFTs devices is as low as 4.0 V. The research suggests that ZnO/SWCNTs TFTs have the potential applications in low-cost, large-area and flexible consumptive electronics, such as chemical-biological sensors and smart label.

Superlative TINs

NASA Technical Reports Server (NTRS)

Chamberlin, R.

2002-01-01

TIN is short for 'triangulated irregular network,' which is a piecewise planar model of a surface. If properly constructed, a TIN can be more than 30 times as efficient as a regular triangulation. In our project (a ground combat simulation to support U.S. Army training exercises), the TIN is used to represent the Earth's surface and is used primarily to determine whether line of sight is blocked by terrain. High efficiency requires accurate identification of ridgelines with as few triangles as possible. The work currently in progress is the implementation of a TINning process that we hope will produce superlative TINs. This presentation describes that process.

Long-lived, charge-shift states in heterometallic, porphyrin-based dendrimers formed via click chemistry.

PubMed

Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol; Odobel, Fabrice; Harriman, Anthony

2011-05-26

A series of multiporphyrin clusters has been synthesized and characterized in which there exists a logical gradient for either energy or electron transfer between the porphyrins. A central free-base porphyrin (FbP), for example, is equipped with peripheral zinc(II) porphyrins (ZnP) which act as ancillary light harvesters and transfer excitation energy to the FbP under visible light illumination. Additional energy-transfer steps occur at the triplet level, and the series is expanded by including magnesium(II) porphyrins and/or tin(IV) porphyrins as chromophores. Light-induced electron transfer is made possible by incorporating a gold(III) porphyrin (AuP(+)) into the array. Although interesting by themselves, these clusters serve as control compounds by which to understand the photophysical processes occurring within a three-stage dendrimer comprising an AuP(+) core, a second layer formed from four FbP units, and an outer layer containing 12 ZnP residues. Here, illumination into a peripheral ZnP leads to highly efficient electronic energy transfer to FbP, followed by charge transfer to the central AuP(+). Charge recombination within the resultant charge-shift state is intercepted by secondary hole transfer to the ZnP, which occurs with a quantum yield of around 20%. The final charge-shift state survives for some microseconds in fluid solution at room temperature.

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Effect of thermal implying during ageing process of nanorods growth on the properties of zinc oxide nanorod arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, M., E-mail: rusop@salam.uitm.my

Undoped and Sn-doped Zinc oxide (ZnO) nanostructures have been fabricated using a simple sol-gel immersion method at 95°C of growth temperature. Thermal sourced by hot plate stirrer was supplied to the solution during ageing process of nanorods growth. The results showed significant decrement in the quality of layer produced after the immersion process where the conductivity and porosity of the samples reduced significantly due to the thermal appliance. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM) electrical properties has been characterized using current voltage (I-V) measurement.

Germanium and Tin Based Anode Materials for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Ji, Dongsheng

The discovery of safe anode materials with high energy density for lithium-ion batteries has always been a significant topic. Group IV elements have been under intensive study for their high capability of alloying with lithium. Batteries with graphite and tin based anode material have already been applied in cell phones and vehicles. In order to apply group IV elements, their dramatic volume change during lithiation and delithiation processes is the key point to work on. Reducing the particle size is the most common method to buffer the volume expansion. This strategy has been applied on both germanium and tin based materials. Germanium based anode material has been made by two different synthesis methods. The amorphous Ge-C-Ti composite material was made by ball milling method and performed much better than other germanium alloy including Ge-Mg, Ge-Fe and Ge-Fe.Germanium sphere nano particles with diameter of around 50 nm have been made by solution method. After ball milled with graphite, the resulted product performed stable capacity over 500 mAh˙g-1 for more than 20 cycles. Ball milled graphite in the composite plays an important role of buffering volume change and stabilizing germanium. Sn-Fe alloy is one of the feasible solutions to stabilize tin. Sn 2Fe-C composite has been made by ball milling method. After optimizations of the ratio of precursors, reaction time, milling balls and electrolyte additives, the electrochemistry performance was improved. The anode performed 420 mAh˙ -1 at 1.0 mA/cm2 and maintained its structure after cycling at 2.0 mA/cm2. At 0.3 mA/cm2 cycling rate, the anode performed 978 mAh/cm3 after 500 cycles, which still exceeds the theoretical capacity of graphite.

Process parameters in the manufacture of ceramic ZnO nanofibers made by electrospinning

NASA Astrophysics Data System (ADS)

Nonato, Renato C.; Morales, Ana R.; Rocha, Mateus C.; Nista, Silvia V. G.; Mei, Lucia H. I.; Bonse, Baltus C.

2017-01-01

Zinc oxide (ZnO) nanofibers were prepared by electrospinning under different conditions using a solution of poly(vinyl alcohol) and zinc acetate as precursor. A 23 factorial design was made to study the influence of the process parameters in the electrospinning (collector distance, flow rate and voltage), and a 22 factorial design was made to study the influence of the calcination process (time and temperature). SEM images were made to analyze the fiber morphology before and after calcination process, and the images were made to measure the nanofiber diameter. X-ray diffraction was made to analyze the total precursor conversion to ZnO and the elimination of the polymeric carrier.

Determination of organo-zinc based fungicides in timber treatments employing gas chromatographic analysis with mass selective detection and/or inductively coupled plasma atomic emission spectroscopy.

PubMed

Rimmer, D A; Johnson, P D; Bradley, S D

2001-09-14

A method for the determination of zinc octoate (zinc 2-ethylhexanoate) and acypetacs zinc in occupational hygiene samples and wood treatments formulations is described. The zinc carboxylates are liquid-liquid partitioned between toluene and 1 M HCl, with the liberated acids being extracted into the toluene and zinc (chloride) into the acid. The carboxylic acids are then methylated using trimethylsilyldiazomethane-methanol and the resultant methyl esters are selectively and sensitively analysed by gas chromatography with mass selective detection (GC-MS). Alternatively, the zinc content of the acid extract can be analysed by inductively coupled plasma atomic emission spectroscopy (ICP-AES). GC-MS is the preferred method of analysis for zinc octoate, where a single analyte (methyl-2-ethylhexanoate) is produced for analysis. Because acypetacs zinc contains a complex mixture of carboxylates, quantitative GC-MS analysis of the methyl esters produced is impractical and ICP-AES is the preferred method for quantitation. In this case, GC-MS can be used to confirm the identity of the product used. The analysis of occupational hygiene samples (cotton pads, gloves and socks as well as Tenax tubes and GF/A filters) spiked with metal carboxylates is demonstrated. Recoveries around 70-90% and reproducibilities of 5-23% (n=6-8) were typically achieved for the determination of tin octoate (a surrogate for zinc octoate) at spiking levels ranging from 4 to 190 microg per sampling device. Recoveries around 102-106% and reproducibilities of 10-12% (n=5-6) were typically achieved for acypetacs zinc at spiking levels ranging from 100 mg per sampling device. Reaction yields for the octoate methylation reaction were in the region of 85-87%. The method was used to monitor for occupational exposure to zinc octoate and acypetacs zinc during the application of wood treatments to fences.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

PubMed

Zhang, Xue; Lee, Hyeonju; Kwon, Jung-Hyok; Kim, Eui-Jik; Park, Jaehoon

2017-07-31

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242

Dye-sensitized solar cell characteristics of nanocomposite zinc ferrite working electrode: effect of composite precursors and titania as a blocking layer on photovoltaic performance.

PubMed

Habibi, Mohammad Hossein; Habibi, Amir Hossein; Zendehdel, Mahmoud; Habibi, Mehdi

2013-06-01

This research investigates the performance of a zinc ferrite (ZF) as working electrodes in a dye-sensitized solar cell (DSSC). This ZF working electrode was prepared by sol-gel and thermal decomposition of four different precursors including: zinc acetate dihydrate (Zn(CH3COO)2·2H2O), ferric nitrate nonahydrate (Fe(NO3)3·9H2O), iron(III) acetate; Fe(C2H3O2)3, and zinc nitrate hexahydrate, Zn(NO3)2·6H2O. The effects of annealing temperature and precursors on the structural, morphological, and optical properties were investigated. The field emission scanning electron microscope images (FESEM) and scanning electron microscopy (SEM) show that ZFe films are polycrystalline in nature and homogeneous with densely packed grains. Nanoporous zinc ferrite coatings were prepared by doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in DSSC. In all DSSCs, platinized FTO and [Co(bpy)3](2+/3+) in 3-methoxy proponitrile were used as counter electrode and redox mediator system respectively. Comparing the fill factors of four different zinc ferrite nanocomposites, the highest fill factor was for ZnFe2O4-TBL sample. Cell fabricated with ZnFeA working electrode shows relatively higher Jsc. Copyright © 2013 Elsevier B.V. All rights reserved.

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

PubMed

Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2016-03-02

Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

Alternate current magnetic property characterization of nonstoichiometric zinc ferrite nanocrystals for inductor fabrication via a solution based process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Hongseok; Kim, Jungkwun; Allen, Mark G.

2016-03-21

We investigate the ac magnetic behavior of solution processable, non-stoichiometric zinc ferrite nanocrystals with a series of sizes and zinc concentrations. Nearly monodisperse Zn{sub x}Fe{sub 3−x}O{sub 4} nanocrystals (x = 0–0.25) with an average size ranging from 7.4 nm to 13.8 nm are synthesized by using a solvothermal method. All the nanocrystals are in a superparamagnetic state at 300 K, which is confirmed by Superconductive Quantum Interference Device magnetometry. Due to the doping of non-magnetic Zn{sup 2+} into A site of ferrite, the saturation magnetization of nanocrystals increases as the size and Zn concentration increases. The ac magnetic permeability measurements at radio frequencies reveal thatmore » the real part of the magnetic permeability of similarly sized ferrite nanocrystals can be enhanced by almost twofold as the Zn{sup 2+} doping level increases from 0 to 0.25. The integration of 12.3 nm Zn{sub 0.25}Fe{sub 2.75}O{sub 4} nanocrystals into a toroidal inductor and a solenoid inductor prepared via a simple solution cast process yields a higher quality factors than air core inductors with the same geometries up to 5 MHz and 9 MHz, respectively, which is in the regime of the switching frequencies for the advanced integrated power converters.« less

Transient photocurrent responses in amorphous Zn-Sn-O thin films

NASA Astrophysics Data System (ADS)

Kim, Ju-Yeon; Oh, Sang-A.; Yu, Kyeong Min; Bae, Byung Seong; Yun, Eui-Jung

2015-04-01

In this study we characterized the transient photocurrent responses in solution-processed amorphous zinc-tin-oxide (a-ZTO) thin films measured under light illumination with a wavelength of 400 nm at different temperatures. By using the temperature-dependent photoconductivities of a-ZTO thin films, we extracted the activation energies (E ac ) of photo-excitation and dark relaxation through an extended stretched exponential analysis (SEA). The SEA was found to describe well the dark relaxation characteristics as well as the photo-excitation processes. The SEA also indicates that the dark relaxation process reveals a dispersive transient photoconductivity with a broader distribution of the E ac while the photo-excitation process shows non-dispersive characteristics. Samples exposed by light at temperatures less than 373 K possess the fast processes of photo-excitation and dark relaxation. This suggests that a fast process, for example, a generation/recombination of charged carriers related to a band-to-band transition and/or shallow/deep oxygen-vacancy (V o ) sub-gap donor states, is dominant in the case of light illumination at low temperatures of less than 373 K. The SEA indicates, however, that a much slower process due mainly to the delay of the onset of ionization/neutralization of the deep V o states by multiple-trapping is dominant for samples under light illumination at a high temperature of 373 K. Based on the experimental results, for the dark relaxation process, we conclude that the process transitions from a fast recombination of electrons through band-to-band transitions and/or shallow/deep V o donor states to a slow neutralization of the ionized V o states occurs due to enhanced carrier multiple-trapping by relatively deep V o trap states when the temperature becomes greater than 363 K. An energy band diagram of a-ZTO thin films was proposed in terms of the temperature and the E ac distribution to explain these observed results.

Stormwater Collection, Treatment, Recycling and Reuse in a Shipyard

DTIC Science & Technology

1999-05-26

effluent is monitored as if it was a confined, discrete source. Where tributyltin ( TBT ) paint is removed or applied to ships, it is one of the...ppt TBT limit). Based on NURP findings and the monitoring requirements of many shipyards, it would appear that copper, zinc, and lead would be likely...candidates for numeric limits on stormwater discharges. Stormwater discharge limits for tributyl tin ( TBT ) may also occur in the future; limits of 50

Target immobilization as a strategy for NMR-based fragment screening: comparison of TINS, STD, and SPR for fragment hit identification.

PubMed

Kobayashi, Masakazu; Retra, Kim; Figaroa, Francis; Hollander, Johan G; Ab, Eiso; Heetebrij, Robert J; Irth, Hubertus; Siegal, Gregg

2010-09-01

Fragment-based drug discovery (FBDD) has become a widely accepted tool that is complementary to high-throughput screening (HTS) in developing small-molecule inhibitors of pharmaceutical targets. Because a fragment campaign can only be as successful as the hit matter found, it is critical that the first stage of the process be optimized. Here the authors compare the 3 most commonly used methods for hit discovery in FBDD: high concentration screening (HCS), solution ligand-observed nuclear magnetic resonance (NMR), and surface plasmon resonance (SPR). They selected the commonly used saturation transfer difference (STD) NMR spectroscopy and the proprietary target immobilized NMR screening (TINS) as representative of the array of possible NMR methods. Using a target typical of FBDD campaigns, the authors find that HCS and TINS are the most sensitive to weak interactions. They also find a good correlation between TINS and STD for tighter binding ligands, but the ability of STD to detect ligands with affinity weaker than 1 mM K(D) is limited. Similarly, they find that SPR detection is most suited to ligands that bind with K(D) better than 1 mM. However, the good correlation between SPR and potency in a bioassay makes this a good method for hit validation and characterization studies.

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Development of a combined pyro- and hydro-metallurgical route to treat spent zinc-carbon batteries.

PubMed

Baba, A A; Adekola, A F; Bale, R B

2009-11-15

The potential of solvent extraction using Cynanex272 for the recovery of zinc from spent zinc carbon batteries after a prior leaching in hydrochloric acid has been investigated. The elemental analysis of the spent material was carried out by ICP-MS. The major metallic elements are: ZnO (41.30%), Fe(2)O(3) (4.38%), MnO(2) (2.69%), Al(2)O(3) (1.01%), CaO (0.36%) and PbO (0.11%). The quantitative leaching by hydrochloric acid showed that the dissolution rates are significantly influenced by temperature and concentration of the acid solutions. The experimental data for the dissolution rates have been analyzed and were found to follow the shrinking core model for mixed control reaction with surface chemical reaction as the rate-determining step. About 90.3% dissolution was achieved with 4M HCl solution at 80 degrees C with 0.050-0.063 mm particle size within 120 min at 360 rpm. Activation energy value of 22.78 kJ/mol and a reaction order of 0.74 with respect to H(+) ion concentration were obtained for the dissolution process. An extraction yield of 94.23% zinc by 0.032M Cyanex272 in kerosene was obtained from initial 10 g/L spent battery leach liquor at 25+/-2 degrees C and at optimal stirring time of 25 min. Iron has been effectively separated by precipitation prior to extraction using ammoniacal solution at pH 3.5, while lead and other trace elements were firstly separated from Zn and Fe by cementation prior to iron removal and zinc extraction. Finally, the stripping study showed that 0.1M HCl led to the stripping of about 95% of zinc from the organic phase.

Properties of ZnO nanocrystals prepared by radiation method

NASA Astrophysics Data System (ADS)

Čuba, Václav; Gbur, Tomáš; Múčka, Viliam; Nikl, Martin; Kučerková, Romana; Pospíšil, Milan; Jakubec, Ivo

2010-01-01

Zinc oxide nanoparticles were prepared by irradiation of aqueous solutions containing zinc(II) ions, propan-2-ol, polyvinyl alcohol, and hydrogen peroxide. Zinc oxide was found in solid phase either directly after irradiation, or after additional heat treatment. Various physicochemical parameters, including scintillation properties of prepared materials, were studied. After decomposition of impurities and annealing of oxygen vacancies, the samples showed intensive emission in visible spectral range and well-shaped exciton luminescence at 390-400 nm. The best scintillating properties had zinc oxide prepared from aqueous solutions containing zinc formate as initial precursor and hydrogen peroxide. Size of the crystalline particles ranged from tens to hundreds nm, depending on type of irradiated solution and post-irradiation thermal treatment.

Photocatalysis as an Effective Advanced Oxidation Process

EPA Science Inventory

Photocatalysis is generally referred to as the acceleration of a photoreaction by the presence of a semiconductor catalyst such as titanium dioxide (TiO2) or zinc oxide (ZnO). Photocatalytic materials can be prepared by using various methods such as a sol-gel process, solution pr...

Effect of Sn4+ Additives on the Microstructure and Corrosion Resistance of Anodic Coating Formed on AZ31 Magnesium Alloy in Alkaline Solution

NASA Astrophysics Data System (ADS)

Salman, S. A.; Kuroda, K.; Saito, N.; Okido, M.

Magnesium is the lightest structural metal with high specific strength and good mechanical properties. However, poor corrosion resistance limits its widespread use in many applications. Magnesium is usually treated with Chromate conversion coatings. However, due to changing environmental regulations and pollution prevention requirements, a significant push exists to find new, alternative for poisonous Cr6+. Therefore, we aim to improve corrosion resistance of anodic coatings on AZ31 alloys using low cost non-chromate electrolyte. Anodizing was carried out in alkaline solutions with tin additives. The effect of tin additives on the coating film was characterized by SEM and XRD. The corrosion resistance was evaluated using anodic and cathodic polarizations and electrochemical impedance spectroscopy (EIS). Corrosion resistance property was improved with tin additives and the best anti-corrosion property was obtained with addition of 0.03 M Na2SnO3.3H2O to anodizing solution.

Effect of Zinc Oxide Doping on Electroluminescence and Electrical Behavior of Metalloporphyrins-Doped Samarium Complex

NASA Astrophysics Data System (ADS)

Janghouri, Mohammad; Amini, Mostafa M.

2018-02-01

Samarium complex [(Sm(III)] as a new host material was used for preparation of red organic light-emitting diodes (OLEDs). Devices with configurations of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):(poly(styrenesulfonate) (PEDOT:PSS (50 nm)/polyvinyl carbazole (PVK):[zinc oxide (ZnO)] (50 nm)/[(Sm(III)]:[zinc(II) 2,3-tetrakis(dihydroxyphenyl)-porphyrin and Pt(II) 2,3-dimethoxyporphyrin] (60 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (15 nm)/Al (150 nm) have been fabricated and investigated. An electroplex occurring at the (PVK/Sm: Pt(II) 2,3-dimethoxyporphyrin) interface has been suggested when ZnO nanoparticles were doped in PVK. OLED studies have revealed that the photophysical characteristics and electrical behavior of devices with ZnO nanoparticles are much better than those of devices with pure PVK. The efficiency of devices based on [(Sm(III)] was superior than that of known aluminum tris(8-hydroxyquinoline) (Alq3) and also our earlier reports on red OLEDs under the same conditions.

Zinc phthalocyanine nanowires based flexible sensor for room temperature Cl2 detection

NASA Astrophysics Data System (ADS)

Devi, Pooja; Saini, Rajan; Singh, Rajinder; Mahajan, A.; Bedi, R. K.; Aswal, D. K.; Debnath, A. K.

2018-04-01

We have fabricated highly sensitive and Cl2 selective flexible sensor by depositing solution processed zinc phthalocyanine nanowires onto the flexible PET substrate and studied its Cl2 sensing characteristics in Cl2 concentration range 5-1500 ppb. The flexible sensor has a minimum detection limit as low as 5 ppb of Cl2 and response as high as 550% within 10 seconds. Interestingly, the sensor exhibited enhanced and faster response kinetics under bending conditions. The gas sensing mechanism of sensor has been discussed on the basis of XPS and Raman spectroscopic studies which revealed that zinc ions were the preferred sites for Cl2 interactions.

Electrocatalytic Zinc Composites as the Efficient Counter Electrodes of Dye-Sensitized Solar Cells: Study on the Electrochemical Performances and Density Functional Theory Calculations.

PubMed

Li, Chun-Ting; Chang, Hung-Yu; Li, Yu-Yan; Huang, Yi-June; Tsai, Yu-Lin; Vittal, R; Sheng, Yu-Jane; Ho, Kuo-Chuan

2015-12-30

Highly efficient zinc compounds (Zn3N2, ZnO, ZnS, and ZnSe) have been investigated as low-cost electrocatalysts for the counter electrodes (CE) of dye-sensitized solar cells (DSSCs). Among them, Zn3N2 and ZnSe are introduced for the first time in DSSCs. The zinc compounds were separately mixed with a conducting binder, poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) ( PSS), and thereby four composite films of Zn3N2/PEDOT:PSS, ZnO/PEDOT:PSS, ZnS/PEDOT:PSS, and ZnSe/ PSS were coated on the tin-doped indium oxide (ITO) substrates through a simple drop-coating process. In the composite film, nanoparticles of the zinc compound form active sites for the electrocatalytic reduction of triiodide ions, and PSS provides a continuous conductive matrix for fast electron transfer. By varying the weight percentage (5-20 wt %) of a zinc compound with respect to the weight of the PSS, the optimized concentration of a zinc compound was found to be 10 wt % in all four cases, based on the photovoltaic performances of the corresponding DSSCs. At this concentration (10 wt %), the composites films with Zn3N2 (Zn3N2-10), ZnO (ZnO-10), ZnS (ZnS-10), and ZnSe (ZnSe-10) rendered, for their DSSCs, power conversion efficiencies (η) of 8.73%, 7.54%, 7.40%, and 8.13%, respectively. The difference in the power conversion efficiency is explained based on the electrocatalytic abilities of those composite films as determined by cyclic voltammetry (CV), Tafel polarization plots, and electrochemical impedance spectroscopy (EIS) techniques. The energy band gaps of the zinc compounds, obtained by density functional theory (DFT) calculations, were used to explain the electrocatalytic behaviors of the compounds. Among all the zinc-based composites, the one with Zn3N2-10 showed the best electrocatalytic ability and thereby rendered for its DSSC the highest η of 8.73%, which is even higher than that of the cell with the traditional Pt CE (8.50%). Therefore, Zn3N2 can be considered as a promising inexpensive electrocatalyst to replace the rare and expensive Pt.

Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors

NASA Astrophysics Data System (ADS)

Kim, Dongwook; Lee, Woo-Sub; Shin, Hyunji; Choi, Jong Sun; Zhang, Xue; Park, Jaehoon; Hwang, Jaeeun; Kim, Hongdoo; Bae, Jin-Hyuk

2014-08-01

We studied the effects of negative gate-bias stress on the electrical characteristics of top-contact zinc-oxide (ZnO) thin-film transistors (TFTs), which were fabricated by spin coating a ZnO solution onto a silicon-nitride gate dielectric layer. The negative gate-bias stress caused characteristic degradations in the on-state currents and the field-effect mobility of the fabricated ZnO TFTs. Additionally, a decrease in the off-state currents and a positive shift in the threshold voltage occurred with increasing stress time. These results indicate that the negative gate-bias stress caused an injection of electrons into the gate dielectric, thereby deteriorating the TFT's performance.

Polymorphic one-dimensional (N2H4)2ZnTe: soluble precursors for the formation of hexagonal or cubic zinc telluride.

PubMed

Mitzi, David B

2005-10-03

Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.

Fully solution-processed, transparent organic power-generating polarizer

NASA Astrophysics Data System (ADS)

Chou, Wei-Yu; Hsu, Fang-Chi; Chen, Yang-Fang

2017-03-01

We fabricate transparent organic power-generating polarizer by all solution process. Based on the conventional indium-tin-oxide-coated glass as the bottom cathode, the subsequent layers are prepared by a combination of solution processing methods. Sprayed silver nanowires film serves as the top anode and can transmit greater than 80% of the visible light with sheet resistance of 16 Ω/□. By adopting the quasi-bilayer structure for the photoactive layer composed of rubbed polymer donors to produce anisotropic optical property underneath fullerene acceptors, the finished device demonstrates a power conversion efficiency of 1.36% with unpolarized light, a dichroic ratio of 3.2, and a high short circuit current ratio of 2.6 with polarized light. Our proposed fabrication procedures of devices take into account not only the cost-effective production, but also the flexibility of devices for applying in flexible, scalable circuits to advance the development of future technology.

Effect of Process Parameter on Barium Titanate Stannate (BTS) Materials Sintered at Low Sintering

NASA Astrophysics Data System (ADS)

Shukla, Alok; Bajpai, P. K.

2011-11-01

Ba(Ti1-xSnx)O3 solid solutions with (x = 0.15, 0.20, 0.30 and 0.40) are synthesized using conventional solid state reaction method. Formation of solid solutions in the range 0 ≤ x ≤0.40 is confirmed using X-ray diffraction technique. Single phase solid solutions with homogeneous grain distribution are observed at relatively low sintering by controlling process parameters viz. sintering time. Composition at optimized temperature (1150 °C) sintered by varying the sintering time, stabilize in cubic perovskite phase. The % experimental density increase with increasing the time of sintering instead of increasing sintering temperature. The lattice parameter increases by increasing the tin composition in the material. This demonstrates that process parameter optimization can lead to single phase at relatively lower sintering-a major advantage for the materials used as capacitor element in MLCC.

Small molecule solution-processed bulk heterojunction solar cells with inverted structure using porphyrin donor

NASA Astrophysics Data System (ADS)

Yamamoto, Takaki; Hatano, Junichi; Nakagawa, Takafumi; Yamaguchi, Shigeru; Matsuo, Yutaka

2013-01-01

Utilizing tetraethynyl porphyrin derivative (TE-Por) as a small molecule donor material, we fabricated a small molecule solution-processed bulk heterojunction (BHJ) solar cell with inverted structure, which exhibited 1.6% power conversion efficiency (JSC (short-circuit current) = 4.6 mA/cm2, VOC (open-circuit voltage) = 0.90 V, and FF (fill factor) = 0.39) in the device configuration indium tin oxide/TiOx (titanium sub-oxide)/[6,6]-phenyl-C61-butyric acid methyl ester:TE-Por (5:1)/MoOx (molybdenum sub-oxide)/Au under AM1.5 G illumination at 100 mW/cm2. Without encapsulation, the small molecule solution-processed inverted BHJ solar cell also showed remarkable durability to air, where it kept over 73% of its initial power conversion efficiency after storage for 28 days under ambient atmosphere in the dark.

Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes.

PubMed

Valitova, Irina; Natile, Marta Maria; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2017-10-25

Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO 2 ) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO 2 transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO 2 films. Since decreasing the SnO 2  area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO 2 transistors that operate in the enhancement mode that can withstand moderate mechanical bending.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

NASA Astrophysics Data System (ADS)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

The biological inorganic chemistry of zinc ions.

PubMed

Krężel, Artur; Maret, Wolfgang

2016-12-01

The solution and complexation chemistry of zinc ions is the basis for zinc biology. In living organisms, zinc is redox-inert and has only one valence state: Zn(II). Its coordination environment in proteins is limited by oxygen, nitrogen, and sulfur donors from the side chains of a few amino acids. In an estimated 10% of all human proteins, zinc has a catalytic or structural function and remains bound during the lifetime of the protein. However, in other proteins zinc ions bind reversibly with dissociation and association rates commensurate with the requirements in regulation, transport, transfer, sensing, signalling, and storage. In contrast to the extensive knowledge about zinc proteins, the coordination chemistry of the "mobile" zinc ions in these processes, i.e. when not bound to proteins, is virtually unexplored and the mechanisms of ligand exchange are poorly understood. Knowledge of the biological inorganic chemistry of zinc ions is essential for understanding its cellular biology and for designing complexes that deliver zinc to proteins and chelating agents that remove zinc from proteins, for detecting zinc ion species by qualitative and quantitative analysis, and for proper planning and execution of experiments involving zinc ions and nanoparticles such as zinc oxide (ZnO). In most investigations, reference is made to zinc or Zn 2+ without full appreciation of how biological zinc ions are buffered and how the d-block cation Zn 2+ differs from s-block cations such as Ca 2+ with regard to significantly higher affinity for ligands, preference for the donor atoms of ligands, and coordination dynamics. Zinc needs to be tightly controlled. The interaction with low molecular weight ligands such as water and inorganic and organic anions is highly relevant to its biology but in contrast to its coordination in proteins has not been discussed in the biochemical literature. From the discussion in this article, it is becoming evident that zinc ion speciation is important in zinc biochemistry and for biological recognition as a variety of low molecular weight zinc complexes have already been implicated in biological processes, e.g. with ATP, glutathione, citrate, ethylenediaminedisuccinic acid, nicotianamine, or bacillithiol. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Investigating Sodium Storage Mechanisms in Tin Anodes: A Combined Pair Distribution Function Analysis, Density Functional Theory, and Solid-State NMR Approach.

PubMed

Stratford, Joshua M; Mayo, Martin; Allan, Phoebe K; Pecher, Oliver; Borkiewicz, Olaf J; Wiaderek, Kamila M; Chapman, Karena W; Pickard, Chris J; Morris, Andrew J; Grey, Clare P

2017-05-31

The alloying mechanism of high-capacity tin anodes for sodium-ion batteries is investigated using a combined theoretical and experimental approach. Ab initio random structure searching (AIRSS) and high-throughput screening using a species-swap method provide insights into a range of possible sodium-tin structures. These structures are linked to experiments using both average and local structure probes in the form of operando pair distribution function analysis, X-ray diffraction, and 23 Na solid-state nuclear magnetic resonance (ssNMR), along with ex situ 119 Sn ssNMR. Through this approach, we propose structures for the previously unidentified crystalline and amorphous intermediates. The first electrochemical process of sodium insertion into tin results in the conversion of crystalline tin into a layered structure consisting of mixed Na/Sn occupancy sites intercalated between planar hexagonal layers of Sn atoms (approximate stoichiometry NaSn 3 ). Following this, NaSn 2 , which is predicted to be thermodynamically stable by AIRSS, forms; this contains hexagonal layers closely related to NaSn 3 , but has no tin atoms between the layers. NaSn 2 is broken down into an amorphous phase of approximate composition Na 1.2 Sn. Reverse Monte Carlo refinements of an ab initio molecular dynamics model of this phase show that the predominant tin connectivity is chains. Further reaction with sodium results in the formation of structures containing Sn-Sn dumbbells, which interconvert through a solid-solution mechanism. These structures are based upon Na 5-x Sn 2 , with increasing occupancy of one of its sodium sites commensurate with the amount of sodium added. ssNMR results indicate that the final product, Na 15 Sn 4 , can store additional sodium atoms as an off-stoichiometry compound (Na 15+x Sn 4 ) in a manner similar to Li 15 Si 4 .

Investigating Sodium Storage Mechanisms in Tin Anodes: A Combined Pair Distribution Function Analysis, Density Functional Theory, and Solid-State NMR Approach

DOE PAGES

Stratford, Joshua M.; Mayo, Martin; Allan, Phoebe K.; ...

2017-05-04

Here, the alloying mechanism of high-capacity tin anodes for sodium-ion batteries is investigated using a combined theoretical and experimental approach. Ab initio random structure searching (AIRSS) and high-throughput screening using a species-swap method provide insights into a range of possible sodium–tin structures. These structures are linked to experiments using both average and local structure probes in the form of operando pair distribution function analysis, X-ray diffraction, and 23Na solid-state nuclear magnetic resonance (ssNMR), along with ex situ 119Sn ssNMR. Through this approach, we propose structures for the previously unidentified crystalline and amorphous intermediates. The first electrochemical process of sodium insertionmore » into tin results in the conversion of crystalline tin into a layered structure consisting of mixed Na/Sn occupancy sites intercalated between planar hexagonal layers of Sn atoms (approximate stoichiometry NaSn 3). Following this, NaSn 2, which is predicted to be thermodynamically stable by AIRSS, forms; this contains hexagonal layers closely related to NaSn 3, but has no tin atoms between the layers. NaSn 2 is broken down into an amorphous phase of approximate composition Na 1.2Sn. Reverse Monte Carlo refinements of an ab initio molecular dynamics model of this phase show that the predominant tin connectivity is chains. Further reaction with sodium results in the formation of structures containing Sn–Sn dumbbells, which interconvert through a solid-solution mechanism. These structures are based upon Na 5–xSn 2, with increasing occupancy of one of its sodium sites commensurate with the amount of sodium added. ssNMR results indicate that the final product, Na 15Sn 4, can store additional sodium atoms as an off-stoichiometry compound (Na 15+xSn 4) in a manner similar to Li 15Si 4.« less

Investigating Sodium Storage Mechanisms in Tin Anodes: A Combined Pair Distribution Function Analysis, Density Functional Theory, and Solid-State NMR Approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stratford, Joshua M.; Mayo, Martin; Allan, Phoebe K.

Here, the alloying mechanism of high-capacity tin anodes for sodium-ion batteries is investigated using a combined theoretical and experimental approach. Ab initio random structure searching (AIRSS) and high-throughput screening using a species-swap method provide insights into a range of possible sodium–tin structures. These structures are linked to experiments using both average and local structure probes in the form of operando pair distribution function analysis, X-ray diffraction, and 23Na solid-state nuclear magnetic resonance (ssNMR), along with ex situ 119Sn ssNMR. Through this approach, we propose structures for the previously unidentified crystalline and amorphous intermediates. The first electrochemical process of sodium insertionmore » into tin results in the conversion of crystalline tin into a layered structure consisting of mixed Na/Sn occupancy sites intercalated between planar hexagonal layers of Sn atoms (approximate stoichiometry NaSn 3). Following this, NaSn 2, which is predicted to be thermodynamically stable by AIRSS, forms; this contains hexagonal layers closely related to NaSn 3, but has no tin atoms between the layers. NaSn 2 is broken down into an amorphous phase of approximate composition Na 1.2Sn. Reverse Monte Carlo refinements of an ab initio molecular dynamics model of this phase show that the predominant tin connectivity is chains. Further reaction with sodium results in the formation of structures containing Sn–Sn dumbbells, which interconvert through a solid-solution mechanism. These structures are based upon Na 5–xSn 2, with increasing occupancy of one of its sodium sites commensurate with the amount of sodium added. ssNMR results indicate that the final product, Na 15Sn 4, can store additional sodium atoms as an off-stoichiometry compound (Na 15+xSn 4) in a manner similar to Li 15Si 4.« less

Synthesis and characterization of novel 4-Tetra-4-Tolylsulfonyl ZnPc thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Khalil, Salah; Tazarki, Helmi; Souli, Mehdi; Guasch, Cathy; Jamoussi, Bassem; Kamoun, Najoua

2017-11-01

Novel 4-Tetra-4-Tolylsulfonyl:zinc phthalocyanine and simple zinc phthalocyanine were synthesized. Our materials were grown on glass substrates by spin coating technique. Thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electronic micrograph (SEM), atomic force microscopy (AFM), spectrophotometer and Hall effect measurement. X-ray spectra reveal that 4-Tetra-4-Tolylsulfonyl:zinc phthalocyanine (4T4TS:ZnPc) and zinc phthalocyanine (ZnPc) thin films have a monoclinic crystalline structure in β phase. The surface properties and chemical composition were detailed using XPS measurement. SEM were used to investigate the surface morphology for 4T4TS:ZnPc and ZnPc thin films. Atomic force microscopy images have shown a decrease in surface roughness after substitution. Optical properties were investigated by measuring transmission and reflection spectra. Electrical properties were studied and the different electrical parameters was measured and compared on glass, silicon and tin dioxide substrates by Hall Effect technique. All obtained results indicate an improvement in physical properties of 4T4TS:ZnPc which allows used it in optoelectronic applications.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility

NASA Astrophysics Data System (ADS)

Tseng, Wei-Hao; Fang, Shao-Wei; Lu, Chia-Yang; Chuang, Hung-Yang; Chang, Fan-Wei; Lin, Guan-Yu; Chen, Tsu-Wei; Ma, Kang-Hung; Chen, Hong-Syu; Chen, Teng-Ke; Chen, Yu-Hung; Lee, Jen-Yu; Shih, Tsung-Hsiang; Ting, Hung-Che; Chen, Chia-Yu; Lin, Yu-Hsin; Hong, Hong-Jye

2015-01-01

In this work, the effects of nitrous oxide plasma treatment on the negative bias temperature stress of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) were reported. ITZO TFTs were more suitable for the back channel etched-type device structure because they could withstand both Al- and Cu-acid damage. The initial threshold voltage range could be controlled to within 1 V. The root cause of poor negative bias temperature stress for ITZO was likely due to a higher mobility (∼3.3 times) and more carbon related contamination bonds (∼5.9 times) relative to IGZO. Finally, 65″ active-matrix organic light-emitting diode televisions using the ITZO and IGZO TFTs were fabricated.

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of Zinc Tin Nitride for Application as an Earth Abundant Photovoltaic Absorber

NASA Astrophysics Data System (ADS)

Fioretti, Angela N.

In recent years, many new potential absorber materials based on earth-abundant and non-toxic elements have been predicted. These materials, often made in thin film form and known to absorb light 10-1000 times more e ciently than crystalline silicon, could lower module cost and enable broader solar deployment. One such material is zinc tin nitride (ZnSnN 2), a II-IV-nitride analog of the III-nitride materials, which was identified as a suitable solar absorber due to its direct bandgap, large absorption coefficient, and disorder-driven bandgap tunability. Despite these desirable properties, initial attempts at synthesis resulted in degenerate n-type carrier density. Computational work on the point defect formation energies for this material revealed three donor defects were likely the cause; specifically SnZn antisites, VN sites, and ON substitutions. Given this framework, a defect-driven hypothesis was proposed as a starting point for the present work: if each donor defect could be addressed by tuning deposition parameters, n-type degeneracy may be defeated. By using combinatorial co- sputtering to grow compositionally-graded thin film samples, n-type carrier density was reduced by two orders of magnitude compared to state-of-the-art. This reduction in carrier density was observed for zinc-rich samples, which supported the defect-driven hypothesis initially proposed. These results and their implications are the topic of Chapter 2. Further carrier density control in zinc-rich ZTN was achieved via hydrogen incorporation and post-growth annealing. This strategy was hypothesized to operate by passivating acceptor defects to avoid self-compensation, which were then activated by hydrogen drive- out upon annealing. Carrier density was reduced another order of magnitude using this technique, which is presented in Chapter 3. After defeating n-type degeneracy, a deeper understanding of the electronic structure was pursued. Photoluminescence (PL) was used to study electronic structure and recombination pathways in zinc-rich ZTN, and excitonic emission was observed despite its many crystallographic defects. PL results are presented in Chapter 4. Ultimately, this work has advanced the field of ZTN research both technologically and scientifically, by providing strategies for self-doping control and identifying critical defect interactions giving rise to n-type degeneracy and carrier density reduction.

Energetic Materials and Metals Contamination at CFB/ASU Wainwirght, Alberta Phase 1

DTIC Science & Technology

2008-11-01

Edmonton, Alberta). Metals analyzed for this study were silver (Ag), aluminium (Al), arsenic (As), boron (B), barium (Ba), beryllium (Be), bismuth 4...selenium (Se), antimony (Sb), tin (Sn), strontium (Sr), tellurium (Te), titanium (Ti), thallium (Tl), uranium (U), vanadium (V), zinc (Zn), and...mg/kg mg/kg mg/kg Aluminium - 9070 1040 Antimony 40 2 1 Arsenic 12 7 13.6 Barium 2000 177 73.4 Beryllium 8 40 40 Bismuth - 20 20 Boron - 10

Final Report: Sintered CZTS Nanoparticle Solar Cells on Metal Foil; July 26, 2011 - July 25, 2012

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leidholm, C.; Hotz, C.; Breeze, A.

2012-09-01

This is the final report covering 12 months of this subcontract for research on high-efficiency copper zinc tin sulfide (CZTS)-based thin-film solar cells on flexible metal foil. Each of the first three quarters of the subcontract has been detailed in quarterly reports. In this final report highlights of the first three quarters will be provided and details will be given of the final quarter of the subcontract.

Process for the recycling of alkaline and zinc-carbon spent batteries

NASA Astrophysics Data System (ADS)

Ferella, Francesco; De Michelis, Ida; Vegliò, Francesco

In this paper a recycling process for the recovery of zinc and manganese from spent alkaline and zinc-carbon batteries is proposed. Laboratory tests are performed to obtain a purified pregnant solution from which metallic zinc (purity 99.6%) can be recovered by electrolysis; manganese is recovered as a mixture of oxides by roasting of solid residue coming from the leaching stage. Nearly 99% of zinc and 20% of manganese are extracted after 3 h, at 80 °C with 10% w/v pulp density and 1.5 M sulphuric acid concentration. The leach liquor is purified by a selective precipitation of iron, whereas metallic impurities, such as copper, nickel and cadmium are removed by cementation with zinc powder. The solid residue of leaching is roasted for 30 min at 900 °C, removing graphite completely and obtaining a mixture of Mn 3O 4 and Mn 2O 3 with 70% grade of Mn. After that a technical-economic assessment is carried out for a recycling plant with a feed capacity of 5000 t y -1 of only alkaline and zinc-carbon batteries. This analysis shows the economic feasibility of that plant, supposing a battery price surcharge of 0.5 € kg -1, with a return on investment of 34.5%, gross margin of 35.8% and around 3 years payback time.

Progress in Noise Thermometry at 505 K and 693 K Using Quantized Voltage Noise Ratio Spectra

NASA Astrophysics Data System (ADS)

Tew, W. L.; Benz, S. P.; Dresselhaus, P. D.; Coakley, K. J.; Rogalla, H.; White, D. R.; Labenski, J. R.

2010-09-01

Technical advances and new results in noise thermometry at temperatures near the tin freezing point and the zinc freezing point using a quantized voltage noise source (QVNS) are reported. The temperatures are derived by comparing the power spectral density of QVNS synthesized noise with that of Johnson noise from a known resistance at both 505 K and 693 K. Reference noise is digitally synthesized so that the average power spectra of the QVNS match those of the thermal noise, resulting in ratios of power spectra close to unity in the low-frequency limit. Three-parameter models are used to account for differences in impedance-related time constants in the spectra. Direct comparison of noise temperatures to the International Temperature Scale of 1990 (ITS-90) is achieved in a comparison furnace with standard platinum resistance thermometers. The observed noise temperatures determined by operating the noise thermometer in both absolute and relative modes, and related statistics together with estimated uncertainties are reported. The relative noise thermometry results are combined with results from other thermodynamic determinations at temperatures near the tin freezing point to calculate a value of T - T 90 = +4(18) mK for temperatures near the zinc freezing point. These latest results achieve a lower uncertainty than that of our earlier efforts. The present value of T - T 90 is compared to other published determinations from noise thermometry and other methods.

Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

NASA Astrophysics Data System (ADS)

Kadhim, Imad H.; Abu Hassan, H.

2017-04-01

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol-gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400∘C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

Determination of total tin in geological materials by electrothermal atomic-absorption spectrophotometry using a tungsten-impregnated graphite furnace

USGS Publications Warehouse

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

An electrothermal atomic-absorption spectrophotometric method is described for the determination of total tin in geological materials, with use of a tungsten-impregnated graphite furnace. The sample is decomposed by fusion with lithium metaborate and the melt is dissolved in 10% hydrochloric acid. Tin is then extracted into trioctylphosphine oxide-methyl isobutyl ketone prior to atomization. Impregnation of the furnace with a sodium tungstate solution increases the sensitivity of the determination and improves the precision of the results. The limits of determination are 0.5-20 ppm of tin in the sample. Higher tin values can be determined by dilution of the extract. Replicate analyses of eighteen geological reference samples with diverse matrices gave relative standard deviations ranging from 2.0 to 10.8% with an average of 4.6%. Average tin values for reference samples were in general agreement with, but more precise than, those reported by others. Apparent recoveries of tin added to various samples ranged from 95 to 111% with an average of 102%. ?? 1984.

Inductively coupled plasma atomic emission spectrometric determination of tin in canned food.

PubMed

Sumitani, H; Suekane, S; Nakatani, A; Tatsuka, K

1993-01-01

Various canned foods were digested sequentially with HNO3 and HCl, diluted to 100 mL, and filtered, and then tin was determined by inductively coupled plasma atomic emission spectrometry (ICP/AES). Samples of canned Satsuma mandarin, peach, apricot, pineapple, apple juice, mushroom, asparagus, evaporated milk, short-necked clam, spinach, whole tomato, meat, and salmon were evaluated. Sample preparations did not require time-consuming dilutions, because ICP/AES has wide dynamic range. The standard addition method was used to determine tin concentration. Accuracy of the method was tested by analyzing analytical standards containing tin at 2 levels (50 and 250 micrograms/g). The amounts of tin found for the 50 and 250 micrograms/g levels were 50.5 and 256 micrograms/g, respectively, and the repeatability coefficients of variation were 4.0 and 3.8%, respectively. Recovery of tin from 13 canned foods spiked at 2 levels (50 and 250 micrograms/g) ranged from 93.9 to 109.4%, with a mean of 99.2%. The quantitation limit for tin standard solution was about 0.5 microgram/g.

Study on the removal of iron impurities in methanesulfonic acid tin plating bath

NASA Astrophysics Data System (ADS)

Hou-li, LIU; Jian-Jun, CHEN; Hong-Liang, PAN

2018-03-01

This thesis investigated the the influence of sodium sulfite as reducing agent on the recovery rate of tin ion. The approach is that HZ016 type cation exchange resin was used to adsorb Sn2+ and Fe2+ in electroplated tin solution first. After adsorption, the resin was removed by sulfuric acid, which was added with NaOH to adjust pH value to form precipitation and separate tin. X-ray diffraction (XRD) and energy spectrum (EDS) method were used to analyze the composition of the precipitates adjusted by pH. The results show that when the mass ratio of resin to bath is 1:2, the adsorption efficiency of resin reaches 98.3% and 97.1% respectively, and the elution efficiency of tin and iron reaches 95.1% and 94% respectively when the mass ratio of resin to eluent sulfuric acid is 1:4. Sodium sulfite was added to increase the efficiency of tin recovery by 8.1%. EDS and XRD atlas showed that after pH regulation, the main composition of the filtration precipitation was the hydroxides of tin.

Tin, Bismuth, and Tin–Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents

PubMed Central

Vieira, Luciana; Burt, Jennifer; Richardson, Peter W.; Schloffer, Daniel; Fuchs, David; Moser, Alwin; Bartlett, Philip N.; Reid, Gillian

2017-01-01

Abstract The electrodeposition of tin, bismuth, and tin–bismuth alloys from SnII and BiIII chlorometalate salts in the choline chloride/ethylene glycol (1:2 molar ratio) deep eutectic solvent was studied on glassy carbon and gold by cyclic voltammetry, rotating disc voltammetry, and chronoamperometry. The SnII‐containing electrolyte showed one voltammetric redox process corresponding to SnII/Sn0. The diffusion coefficient of [SnCl3]−, detected as the dominating species by Raman spectroscopy, was determined from Levich and Cottrell analyses. The BiIII‐containing electrolyte showed two voltammetric reduction processes, both attributed to BiIII/Bi0. Dimensionless current/time transients revealed that the electrodeposition of both Sn and Bi on glassy carbon proceeded by 3D‐progressive nucleation at a low overpotential and changed to instantaneous at higher overpotentials. The nucleation rate of Bi on glassy carbon was considerably smaller than that of Sn. Elemental Sn and Bi were electrodeposited on Au‐coated glass slides from their respective salt solutions, as were Sn–Bi alloys from a 2:1 SnII/BiIII solution. The biphasic Sn–Bi alloys changed from a Bi‐rich composition to a Sn‐rich composition by making the deposition potential more negative. PMID:28638772

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

NASA Astrophysics Data System (ADS)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Wrapping process for fabrication of A-15 superconducting composite wires

DOEpatents

Suenaga, M.; Klamut, C.J.; Luhman, T.S.

1980-08-15

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Application of solution-processed V2O5 in inverted polymer solar cells based on fluorine-doped tin oxide substrate.

PubMed

Wu, Jian; Zhang, Yupeng; He, Yeyuan; Liu, Chunyu; Guolt, Wenbin; Ruan, Shengping

2014-06-01

We used a hydrothermal method to synthesis the solution-processed V2O5 as anode buffer layer, which applied on inverted polymer solar cells based on FTO substrate. The structure of the device is glass/FTO/TiO2/P3HT:PCBM/V2O5/Ag. We discussed the dependence of device performance on the concentrations of V2O5 solution. It is found that when the concentration of V2O5 is 300 microg/ml, the power conversion efficiency (PCE of 2.38%) is the highest, which is much higher than that of the device without anode buffer layer (PCE of only 0.87%). Moreover, it can significantly reduce the energy consumption and make it more cost-effective.

Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

PubMed

Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

2015-06-07

Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

NASA Astrophysics Data System (ADS)

Choi, Seon Bin; Song, Man Suk; Kim, Yong

2018-04-01

The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing

2015-10-12

We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of themore » technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.« less

Suppressed decomposition of organometal halide perovskites by impermeable electron-extraction layers in inverted solar cells

PubMed Central

Brinkmann, K.O.; Zhao, J.; Pourdavoud, N.; Becker, T.; Hu, T.; Olthof, S.; Meerholz, K.; Hoffmann, L.; Gahlmann, T.; Heiderhoff, R.; Oszajca, M. F.; Luechinger, N. A.; Rogalla, D.; Chen, Y.; Cheng, B.; Riedl, T

2017-01-01

The area of thin-film photovoltaics has been overwhelmed by organometal halide perovskites. Unfortunately, serious stability concerns arise with perovskite solar cells. For example, methyl-ammonium lead iodide is known to decompose in the presence of water and, more severely, even under inert conditions at elevated temperatures. Here, we demonstrate inverted perovskite solar cells, in which the decomposition of the perovskite is significantly mitigated even at elevated temperatures. Specifically, we introduce a bilayered electron-extraction interlayer consisting of aluminium-doped zinc oxide and tin oxide. We evidence tin oxide grown by atomic layer deposition does form an outstandingly dense gas permeation barrier that effectively hinders the ingress of moisture towards the perovskite and—more importantly—it prevents the egress of decomposition products of the perovskite. Thereby, the overall decomposition of the perovskite is significantly suppressed, leading to an outstanding device stability. PMID:28067308

Directed spatial organization of zinc oxide nanostructures

DOEpatents

Hsu, Julia [Albuquerque, NM; Liu, Jun [Richland, WA

2009-02-17

A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

40 CFR 421.296 - Pretreatment standards for new sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin Subcategory... wastewater pollutants in secondary tin process wastewater introduced into a POTW shall not exceed the following values: (a) Tin smelter SO2 scrubber. PSNS for the Secondary Tin Subcategory Pollutant or...

40 CFR 421.296 - Pretreatment standards for new sources.

Code of Federal Regulations, 2012 CFR

2012-07-01

... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin Subcategory... wastewater pollutants in secondary tin process wastewater introduced into a POTW shall not exceed the following values: (a) Tin smelter SO2 scrubber. PSNS for the Secondary Tin Subcategory Pollutant or...

40 CFR 421.296 - Pretreatment standards for new sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin Subcategory... wastewater pollutants in secondary tin process wastewater introduced into a POTW shall not exceed the following values: (a) Tin smelter SO2 scrubber. PSNS for the Secondary Tin Subcategory Pollutant or...

40 CFR 421.296 - Pretreatment standards for new sources.

Code of Federal Regulations, 2014 CFR

2014-07-01

... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin Subcategory... wastewater pollutants in secondary tin process wastewater introduced into a POTW shall not exceed the following values: (a) Tin smelter SO2 scrubber. PSNS for the Secondary Tin Subcategory Pollutant or...

40 CFR 421.296 - Pretreatment standards for new sources.

Code of Federal Regulations, 2013 CFR

2013-07-01

... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin Subcategory... wastewater pollutants in secondary tin process wastewater introduced into a POTW shall not exceed the following values: (a) Tin smelter SO2 scrubber. PSNS for the Secondary Tin Subcategory Pollutant or...

Evolution of the degradation mechanism of pure zinc stent in the one-year study of rabbit abdominal aorta model.

PubMed

Yang, Hongtao; Wang, Cong; Liu, Chaoqiang; Chen, Houwen; Wu, Yifan; Han, Jintao; Jia, Zichang; Lin, Wenjiao; Zhang, Deyuan; Li, Wenting; Yuan, Wei; Guo, Hui; Li, Huafang; Yang, Guangxin; Kong, Deling; Zhu, Donghui; Takashima, Kazuki; Ruan, Liqun; Nie, Jianfeng; Li, Xuan; Zheng, Yufeng

2017-11-01

In the present study, pure zinc stents were implanted into the abdominal aorta of rabbits for 12 months. Multiscale analysis including micro-CT, scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM) and histological stainings was performed to reveal the fundamental degradation mechanism of the pure zinc stent and its biocompatibility. The pure zinc stent was able to maintain mechanical integrity for 6 months and degraded 41.75 ± 29.72% of stent volume after 12 months implantation. No severe inflammation, platelet aggregation, thrombosis formation or obvious intimal hyperplasia was observed at all time points after implantation. The degradation of the zinc stent played a beneficial role in the artery remodeling and healing process. The evolution of the degradation mechanism of pure zinc stents with time was revealed as follows: Before endothelialization, dynamic blood flow dominated the degradation of pure zinc stent, creating a uniform corrosion mode; After endothelialization, the degradation of pure zinc stent depended on the diffusion of water molecules, hydrophilic solutes and ions which led to localized corrosion. Zinc phosphate generated in blood flow transformed into zinc oxide and small amounts of calcium phosphate during the conversion of degradation microenvironment. The favorable physiological degradation behavior makes zinc a promising candidate for future stent applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Fabrication and characterization of highly transparent and conductive indium tin oxide films made with different solution-based methods

NASA Astrophysics Data System (ADS)

Xia, N.; Gerhardt, R. A.

2016-11-01

Solution-based fabrication methods can greatly reduce the cost and broaden the applications of transparent conducting oxides films, such as indium tin oxide (ITO) films. In this paper, we report on ITO films fabricated by spin coating methods on glass substrates with two different ITO sources: (1) a commercial ITO nanopowder water dispersion and (2) a sol-gel ITO solution. A simple and fast air annealing process was used to treat as-coated ITO films on a controlled temperature hot plate. Thermogravimetric analysis and x-ray diffraction showed that highly crystalline ITO films were formed after the annealing steps. The final ITO films had a good combination of optical properties and electrical properties, especially for films made from five layers of sol-gel ITO (92.66% transmittance and 8.7 × 10-3 Ω cm resistivity). The surface morphology and conducting network on the ITO films were characterized by non-contact and current atomic force microscopy. It was found that conducting paths were only partially connected for the nanoparticle ITO dispersion films, whereas the sol-gel ITO films had a more uniformly distributed conducting network on the surface. We also used the sol-gel ITO films to fabricate a simple liquid crystal display (LCD) device to demonstrate the excellent properties of our films.

Study of metal whiskers growth and mitigation technique using additive manufacturing

NASA Astrophysics Data System (ADS)

Gullapalli, Vikranth

For years, the alloy of choice for electroplating electronic components has been tin-lead (Sn-Pb) alloy. However, the legislation established in Europe on July 1, 2006, required significant lead (Pb) content reductions from electronic hardware due to its toxic nature. A popular alternative for coating electronic components is pure tin (Sn). However, pure tin has the tendency to spontaneously grow electrically conductive Sn whisker during storage. Sn whisker is usually a pure single crystal tin with filament or hair-like structures grown directly from the electroplated surfaces. Sn whisker is highly conductive, and can cause short circuits in electronic components, which is a very significant reliability problem. The damages caused by Sn whisker growth are reported in very critical applications such as aircraft, spacecraft, satellites, and military weapons systems. They are also naturally very strong and are believed to grow from compressive stresses developed in the Sn coating during deposition or over time. The new directive, even though environmentally friendly, has placed all lead-free electronic devices at risk because of whisker growth in pure tin. Additionally, interest has occurred about studying the nature of other metal whiskers such as zinc (Zn) whiskers and comparing their behavior to that of Sn whiskers. Zn whiskers can be found in flooring of data centers which can get inside electronic systems during equipment reorganization and movement and can also cause systems failure. Even though the topic of metal whiskers as reliability failure has been around for several decades to date, there is no successful method that can eliminate their growth. This thesis will give further insights towards the nature and behavior of Sn and Zn whiskers growth, and recommend a novel manufacturing technique that has potential to mitigate metal whiskers growth and extend life of many electronic devices.

Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

NASA Astrophysics Data System (ADS)

Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

2016-08-01

In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Mechanisms of zinc binding to the solute-binding protein AztC and transfer from the metallochaperone AztD.

PubMed

Neupane, Durga P; Avalos, Dante; Fullam, Stephanie; Roychowdhury, Hridindu; Yukl, Erik T

2017-10-20

Bacteria can acquire the essential metal zinc from extremely zinc-limited environments by using ATP-binding cassette (ABC) transporters. These transporters are critical virulence factors, relying on specific and high-affinity binding of zinc by a periplasmic solute-binding protein (SBP). As such, the mechanisms of zinc binding and release among bacterial SBPs are of considerable interest as antibacterial drug targets. Zinc SBPs are characterized by a flexible loop near the high-affinity zinc-binding site. The function of this structure is not always clear, and its flexibility has thus far prevented structural characterization by X-ray crystallography. Here, we present intact structures for the zinc-specific SBP AztC from the bacterium Paracoccus denitrificans in the zinc-bound and apo-states. A comparison of these structures revealed that zinc loss prompts significant structural rearrangements, mediated by the formation of a sodium-binding site in the apo-structure. We further show that the AztC flexible loop has no impact on zinc-binding affinity, stoichiometry, or protein structure, yet is essential for zinc transfer from the metallochaperone AztD. We also found that 3 His residues in the loop appear to temporarily coordinate zinc and then convey it to the high-affinity binding site. Thus, mutation of any of these residues to Ala abrogated zinc transfer from AztD. Our structural and mechanistic findings conclusively identify a role for the AztC flexible loop in zinc acquisition from the metallochaperone AztD, yielding critical insights into metal binding by AztC from both solution and AztD. These proteins are highly conserved in human pathogens, making this work potentially useful for the development of novel antibiotics. © 2017 by The American Society for Biochemistry and Molecular Biology, Inc.

40 CFR 421.295 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2013 CFR

2013-07-01

...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin... existing sources. The mass of wastewater pollutants in secondary tin process wastewater introduced into a POTW must not exceed the following values: (a) Tin smelter SO2 scrubber. PSES for the Secondary Tin...

40 CFR 421.295 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2012 CFR

2012-07-01

...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin... existing sources. The mass of wastewater pollutants in secondary tin process wastewater introduced into a POTW must not exceed the following values: (a) Tin smelter SO2 scrubber. PSES for the Secondary Tin...

40 CFR 421.295 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2014 CFR

2014-07-01

...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin... existing sources. The mass of wastewater pollutants in secondary tin process wastewater introduced into a POTW must not exceed the following values: (a) Tin smelter SO2 scrubber. PSES for the Secondary Tin...

40 CFR 421.295 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin... existing sources. The mass of wastewater pollutants in secondary tin process wastewater introduced into a POTW must not exceed the following values: (a) Tin smelter SO2 scrubber. PSES for the Secondary Tin...

40 CFR 421.295 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Tin... existing sources. The mass of wastewater pollutants in secondary tin process wastewater introduced into a POTW must not exceed the following values: (a) Tin smelter SO2 scrubber. PSES for the Secondary Tin...

Synthesis of organically templated nanoporous tin (II/IV) phosphate for radionuclide and metal sequestration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wellman, Dawn M.; Mattigod, Shas V.; Parker, Kent E.

2006-03-20

Nanoporous tin (II/IV) phosphate materials, with spherical morphology, have been synthesized using cetyltrimethylammonium chloride (CH3(CH2)15N(CH3)3Cl) as the surfactant. The structure of the material is stable at 500°C; however, partial oxidation of the material occurs with redox conversion of Sn2+ to Sn4+, resulting in a mixed Sn(II)/ Sn(IV) material. Preliminary batch contact studies were conducted to assess the effectiveness of nanoporous tin phosphate, NP-SnPO, in sequestering redox sensitive metals and radionuclides, technetium(VII), neptunium(V), thorium(IV), and a toxic metal, chromium(VI), from aqueous matrices. Results indicate tin (II) phosphate removed > 95% of all contaminants investigated from solution.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, U. P.; Nayak, V.

Quantum mechanical first principle calculations have been performed to study the electronic and structural properties of TiN and TiAs in zinc blende (ZB) and rock salt (RS) structures. The full-potential linearized augmented plane wave (FP-LAPW) method has been used within the framework of density functional theory (DFT). The exchange correlation functional has been solved employing generalized gradient approximation (GGA). Our predicted results for lattice constants are in good agreement with the earlier findings. The electronic band structures of TiX are metallic in both the phases.

Low TCR nanocomposite strain gages

NASA Technical Reports Server (NTRS)

Gregory, Otto J. (Inventor); Chen, Ximing (Inventor)

2012-01-01

A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400.degree. C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.

Japanese Resource Dependence.

DTIC Science & Technology

1982-03-01

56% 78% 86% Coal 36 68 80 Crude Oil 98 99 99 Natural Gas -- 78 78 Iron Ore 92 98 98 Copper 86 93 94 Lead 55 64 79 Zinc 36 55 79 Tin 99 98 98 Aluminum...represented by energy resources (oil, gas , coal): The availabilty of adequate energy supplies is of great significance to the minerals and metals production...liquefied natural/petroleum gas , natural gas , and uranium. To meet the country’s energy needs, virtually all forms of mineral fuels were imported to

High temperature regenerable hydrogen sulfide removal agents

DOEpatents

Copeland, Robert J.

1993-01-01

A system for high temperature desulfurization of coal-derived gases using regenerable sorbents. One sorbent is stannic oxide (tin oxide, SnO.sub.2), the other sorbent is a metal oxide or mixed metal oxide such as zinc ferrite (ZnFe.sub.2 O.sub.4). Certain otherwise undesirable by-products, including hydrogen sulfide (H.sub.2 S) and sulfur dioxide (SO.sub.2) are reused by the system, and elemental sulfur is produced in the regeneration reaction. A system for refabricating the sorbent pellets is also described.

Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process

DOEpatents

Heckman, R.A.

1980-12-19

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

Process for separation of zirconium-88, rubidium-83 and yttrium-88

DOEpatents

Heaton, Richard C.; Jamriska, Sr., David J.; Taylor, Wayne A.

1994-01-01

A process for selective separation of strontium-82 and strontium-85 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, passing the first ion-containing solution through a first cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in the first ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, contacting the first resin with an acid solution capable of stripping adsorbed ions from the first cationic exchange resin whereby the adsorbed ions are removed from the first resin to form a second ion-containing solution, evaporating the second ion-containing solution for time sufficient to remove substantially all of the acid and water from the second ion-containing solution whereby a residue remains, dissolving the residue from the evaporated second-ion containing solution in a dilute acid to form a third ion-containing solution, said third ion-containing solution having an acid molarity adapted to permit said ions to be adsorbed by a cationic exchange resin, passing the third ion-containing solution through a second cationic resin whereby the ions are adsorbed by the second resin, contacting the second resin with a dilute sulfuric acid solution whereby the adsorbed ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, and zirconium are selectively removed from the second resin, and contacting the second resin with a dilute acid solution whereby the adsorbed strontium ions are selectively removed. Zirconium, rubidium, and yttrium radioisotopes can also be recovered with additional steps.

A CityGML Extension for Handling Very Large Tins

NASA Astrophysics Data System (ADS)

Kumar, K.; Ledoux, H.; Stoter, J.

2016-10-01

In addition to buildings, the terrain forms an important part of a 3D city model. Although in GIS terrains are usually represented with 2D grids, TINs are also increasingly being used in practice. One example is 3DTOP10NL, the 3D city model covering the whole of the Netherlands, which stores the relief with a constrained TIN containing more than 1 billion triangles. Due to the massive size of such datasets, the main problem that arises is: how to efficiently store and maintain them? While CityGML supports the storage of TINs, we argue in this paper that the current solution is not adequate. For instance, the 1 billion+ triangles of 3DTOP10NL require 686 GB of storage space with CityGML. Furthermore, the current solution does not store the topological relationships of the triangles, and also there are no clear mechanisms to handle several LODs. We propose in this paper a CityGML extension for the compact representation of terrains. We describe our abstract and implementation specifications (modelled in UML), and our prototype implementation to convert TINs to our CityGML structure. It increases the topological relationships that are explicitly represented, and allows us to compress up to a factor of ∼ 25 in our experiments with massive real-world terrains (more than 1 billion triangles).

Combustion Synthesis Technology Applied to In-situ Resource Utilization

DTIC Science & Technology

2006-06-15

or bond energies. When both the precursor salts and the fuel are water soluble, a good homogenization can be achieved in the solution. In the...metallic compounds, e.g. Ni-Al. Steel processing additives, e.g. ferro-nitrides. Electrodes for electrolysis of corrosive media, e.g. TiN, TiB2...reactants; 4. Spreading of a molten phase; 5. Gasification of volatile impurities and reactants; 6. Chemical reaction with initial product formation; 7

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Process for removal of mineral particulates from coal-derived liquids

DOEpatents

McDowell, William J.

1980-01-01

Suspended mineral solids are separated from a coal-derived liquid containing the solids by a process comprising the steps of: (a) contacting said coal-derived liquid containing solids with a molten additive having a melting point of 100.degree.-500.degree. C. in an amount of up to 50 wt. % with respect to said coal-derived liquid containing solids, said solids present in an amount effective to increase the particle size of said mineral solids and comprising material or mixtures of material selected from the group of alkali metal hydroxides and inorganic salts having antimony, tin, lithium, sodium, potassium, magnesium, calcium, beryllium, aluminum, zinc, molybdenum, cobalt, nickel, ruthenium, rhodium or iron cations and chloride, iodide, bromide, sulfate, phosphate, borate, carbonate, sulfite, or silicate anions; and (b) maintaining said coal-derived liquid in contact with said molten additive for sufficient time to permit said mineral matter to agglomerate, thereby increasing the mean particle size of said mineral solids; and (c) recovering a coal-derived liquid product having reduced mineral solids content. The process can be carried out with less than 5 wt. % additive and in the absence of hydrogen pressure.

Modeling effects of solute concentration in Bridgman growth of cadmium zinc telluride

NASA Astrophysics Data System (ADS)

Stelian, Carmen; Duffar, Thierry

2016-07-01

Numerical modeling is used to investigate the effect of solute concentration on the melt convection and interface shape in Bridgman growth of Cd1-x Znx Te (CZT). The numerical analysis is compared to experimental growth in cylindrical ampoules having a conical tip performed by Komar et al. (2001) [15]. In these experiments, the solidification process occurs at slow growth rate (V = 2 ṡ10-7 m / s) in a thermal field characterized by a vertical gradient GT = 20 K / cm at the growth interface. The computations performed by accounting the solutal effect show a progressive damping of the melt convection due to the depleted Zn at the growth interface. The computed shape of the crystallization front is in agreement with the experimental measurement showing a convex-concave shape for the growth through the conical part of the ampoule and a concave shape of the interface in the cylindrical region. The distribution of Zn is nearly uniform over the crystal length except for the end part of the ingots. The anomalous zinc segregation observed in some experiments is explained by introducing the hypothesis of incomplete charge mixing during the homogenization time which precedes the growth process. When the crystallization is started in ampoules having a very sharp conical tip, the heavy CdTe is accumulated at the bottom part of the melt, giving rise to anomalous segregation patterns, featuring very low zinc concentration in the ingots during the first stage of the solidification.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

PubMed

Everaerts, Ken; Zeng, Li; Hennek, Jonathan W; Camacho, Diana I; Jariwala, Deep; Bedzyk, Michael J; Hersam, Mark C; Marks, Tobin J

2013-11-27

Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.

PubMed

Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

2013-11-01

In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors.

PubMed

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-10-19

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

PubMed Central

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-01-01

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites. PMID:28773973

21 CFR 522.2690 - Zinc gluconate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Zinc gluconate. 522.2690 Section 522.2690 Food and..., FEEDS, AND RELATED PRODUCTS IMPLANTATION OR INJECTABLE DOSAGE FORM NEW ANIMAL DRUGS § 522.2690 Zinc gluconate. (a) Specifications. Each milliliter of solution contains 13.1 milligrams zinc as zinc gluconate...

21 CFR 522.2690 - Zinc gluconate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc gluconate. 522.2690 Section 522.2690 Food and..., FEEDS, AND RELATED PRODUCTS IMPLANTATION OR INJECTABLE DOSAGE FORM NEW ANIMAL DRUGS § 522.2690 Zinc gluconate. (a) Specifications. Each milliliter of solution contains 13.1 milligrams zinc as zinc gluconate...

A-15 Superconducting composite wires and a method for making

DOEpatents

Suenaga, Masaki; Klamut, Carl J.; Luhman, Thomas S.

1984-01-01

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

KINETICS OF TRICHLOROETHENE REDUCTION BY ZEROVALENT IRON AND TIN: PRETREATMENT EFFECT, APPARENT ACTIVATION ENERGY, AND INTERMEDIATE PRODUCTS

EPA Science Inventory

The degradation of trichloroethene (TCE) at 2 mg L-1 in headspace free aqueous solution by zerovalent iron (Feo) and tin (Sno) was studied in batch tests at 10, 25, 40, and 55 degrees C and HCI-treated Feo and Sno at 25 and 55 degrees C. The HCI-washing increased metal surface a...

Structural characterization of metal complexes in aqueous solutions: a XAS study of stannous fluoride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsina, Marco A.; Gaillard, Jean-François

The identity and structure of tin(ii)-fluoride complexes formed in aqueous solutions are determined by combining X-ray absorption spectroscopy, thermodynamic modeling and quantum mechanical calculations.

On the composition dependence of faceting behaviour of primary phases during solidification

NASA Astrophysics Data System (ADS)

Saroch, Mamta; Dubey, K. S.; Ramachandrarao, P.

1993-02-01

The entropy of solution of the primary aluminium-rich phase in the aluminium-tin melts has been evaluated as a function of temperature using available thermodynamic and phase equilibria data with a view to understand the faceting behaviour of this phase. It was noticed that the range of compositions in which alloys of aluminium and tin yield a faceted primary phase is correlated with the domain of compositions over which the entropy of solution shows a strong temperature dependence. It is demonstrated that both a high value of the entropy of solution and a strong temperature dependence of it are essential for providing faceting. A strong temperature dependence of the entropy of solution is in turn a consequence of negligible liquidus slope and existence of retrograde solubility. The AgBi and AgPb systems have similar features.

Organo-tins in sediments and mussels from the Sado estuarine system (Portugal).

PubMed

Quevauviller, P; Lavigne, R; Pinel, R; Astruc, M

1989-01-01

Analyses of methyl- and butyl-tin levels in freshwater, estuarine and marine sediments from the Sado estuarine system, and in mussels (Mytilus galloprovincialis) from its adjacent coast, have been performed in order to detect the contaminated areas. The main inputs of tributyl-tin (TBT), along with degradation products di- and monobutyl-tin (DBT and MBT), were detected in the estuarine zone, due to high discharge from shipyards located in this area. These levels are sometimes very high, ranging from 235 to 12,200 ng g(-1) total butyl-tins in sediments. Such inputs lead to higher bioconcentration values in mussels in the estuarine zone, as well as in a harbour located along the adjacent coast. The bioconcentration of organo-tins in mussel tissues could be enhanced in estuarine turbid waters, due to an ingestion of butyl-tins adsorbed onto fine particles, in comparison with non-turbid coastal waters. Debutylation processes occur in both sediments and mussel tissues; in organisms, these processes may lead to the formation of inorganic tin, which may be methylated differently according to the period of the year.

Pechini process-derived tin oxide and tin oxide-graphite composites for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, R.; Lee, Jim Y.; Liu, Z. L.

The Pechini process [Ceram. Bull. 68 (1989) 1002] is used to obtain fine tin oxide powders that reduce the specific volume change in Li + insertion and extraction reactions. The suitability of these tin oxides as active materials for negative electrodes in lithium-ion batteries is investigated. From elemental analysis, it is found that the templating polymer network is almost completely obliterated after heating at 500 °C. The best tin oxide does not exhibit extensive crystallization of tin atoms even after 30 cycles of alloying and de-alloying reactions with Li. The structure and the specific capacity of the oxides are dependent on the heat treatment and remnants of the polymeric CH network can impose an unfavorable outcome. A capacity of 600 mAh g -1, which is unchanged for 30 cycles, can be obtained from tin oxide heat treated at 1000 °C. Composites of graphite and SnO 2 are also prepared and exhibit synergistic interactions between graphite and tin oxide which are similar to those reported previously [Electrochem. Solid State Lett. 3 (2000) 167].

[Concordance between the zinc sulphate flotation and centrifugal sedimentation methods for the diagnosis of intestinal parasites].

PubMed

Inês, Elizabete De Jesus; Pacheco, Flavia Thamiris Figueiredo; Pinto, Milena Carneiro; Mendes, Patrícia Silva de Almeida; Da Costa-Ribeiro, Hugo; Soares, Neci Matos; Teixeira, Márcia Cristina Aquino

2016-12-01

The diagnosis of intestinal parasitic infections depends on the parasite load, the specific gravity density of the parasite eggs, oocysts or cysts, and the density and viscosity of flotation or sedimentation medium where faeces are processed. To evaluate the concordance between zinc sulphate flotation and centrifugal sedimentation in the recovery of parasites in faecal samples of children. Faecal samples of 330 children from day care centers were evaluated by zinc sulphate flotation and centrifugal sedimentation techniques. The frequencies of detection of parasites by each method were determined and the agreement between the diagnostic techniques was evaluated using the kappa index, with 95% confidence intervals. The faecal flotation in zinc sulphate diagnosed significantly more cases of Trichuris trichiura infection when compared to centrifugal sedimentation (39/330; 11.8% vs. 13/330; 3.9%, p<0.001), with low diagnostic concordance between methods (kappa=0.264; 95% CI: 0.102-0.427). Moreover, all positive samples for Enterobius vermicularis eggs (n=5) and Strongyloides stercoralis larvae (n=3) were diagnosed only by zinc sulphate. No statistical differences were observed between methods for protozoa identification. The results showed that centrifugal flotation in zinc sulphate solution was significantly more likely to detect light helminths eggs such as those of T. trichiura and E. vermicularis in faeces than the centrifugal sedimentation process.

Morphological Control of Metal Oxide-Doped Zinc Oxide and Application to Cosmetics

NASA Astrophysics Data System (ADS)

Goto, Takehiro; Yin, Shu; Sato, Tsugio; Tanaka, Takumi

2012-06-01

Zinc oxide shows excellent transparency and ultraviolet radiation shielding ability, and is used for various cosmetics.1-3 However, it possesses high catalytic activity and lower dispersibility. Therefore, spherical particles of zinc oxide have been synthesized by soft solution reaction using zinc nitrate, ethylene glycol, sodium hydroxide and triethanolamine as starting materials. After dissolving these compounds in water, the solution was heated at 90°C for 1 h to form almost mono-dispersed spherical zinc oxide particles. The particle size changed depending on zinc ion concentration, ethylene glycol concentration and so on. Furthermore, with doping some metal ions, the phtocatalytic activity could be decreased. The obtained monodispersed metal ion-doped spherical zinc oxides showed excellent UV shielding ability and low photocatalytic activity. Therefore, they are expected to be used as cosmetics ingredients.

PLUTONIUM CLEANING PROCESS

DOEpatents

Kolodney, M.

1959-12-01

A method is described for rapidly removing iron, nickel, and zinc coatings from plutonium objects while simultaneously rendering the plutonium object passive. The method consists of immersing the coated plutonium object in an aqueous acid solution containing a substantial concentration of nitrate ions, such as fuming nitric acid.

Nanowire liquid pumps

NASA Astrophysics Data System (ADS)

Huang, Jian Yu; Lo, Yu-Chieh; Niu, Jun Jie; Kushima, Akihiro; Qian, Xiaofeng; Zhong, Li; Mao, Scott X.; Li, Ju

2013-04-01

The ability to form tiny droplets of liquids and control their movements is important in printing or patterning, chemical reactions and biological assays. So far, such nanofluidic capabilities have principally used components such as channels, nozzles or tubes, where a solid encloses the transported liquid. Here, we show that liquids can flow along the outer surface of solid nanowires at a scale of attolitres per second and the process can be directly imaged with in situ transmission electron microscopy. Microscopy videos show that an ionic liquid can be pumped along tin dioxide, silicon or zinc oxide nanowires as a thin precursor film or as beads riding on the precursor film. Theoretical analysis suggests there is a critical film thickness of ~10 nm below which the liquid flows as a flat film and above which it flows as discrete beads. This critical thickness is the result of intermolecular forces between solid and liquid, which compete with liquid surface energy and Rayleigh-Plateau instability.

Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.

PubMed

Choi, Pyungho; Lee, Junki; Park, Hyoungsun; Baek, Dohyun; Lee, Jaehyeong; Yi, Junsin; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O2/(Ar + O2)) and subsequent annealing process. The electrical properties exhibited by this device include field-effect mobility (μ(eff)), sub-threshold swing (SS), and on/off current ratio (I(ON/OFF)) values of 28.97 cm2/V x s, 0.2 V/decade, and 2.64 x 10(7), respectively. The average transmittance values for each OPP condition in the visible range were greater than 80%. The positive gate bias stress resulted in a positive threshold voltage (V(th)) shift in the transfer curves and degraded the parameters μ(eff) and SS. These phenomena originated from electron trapping from the ITZO channel layer into the oxide/ITZO interface trap sites.

Realization of the Temperature Scale in the Range from 234.3 K (Hg Triple Point) to 1084.62°C (Cu Freezing Point) in Croatia

NASA Astrophysics Data System (ADS)

Zvizdic, Davor; Veliki, Tomislav; Grgec Bermanec, Lovorka

2008-06-01

This article describes the realization of the International Temperature Scale in the range from 234.3 K (mercury triple point) to 1084.62°C (copper freezing point) at the Laboratory for Process Measurement (LPM), Faculty of Mechanical Engineering and Naval Architecture (FSB), University of Zagreb. The system for the realization of the ITS-90 consists of the sealed fixed-point cells (mercury triple point, water triple point and gallium melting point) and the apparatus designed for the optimal realization of open fixed-point cells which include the gallium melting point, tin freezing point, zinc freezing point, aluminum freezing point, and copper freezing point. The maintenance of the open fixed-point cells is described, including the system for filling the cells with pure argon and for maintaining the pressure during the realization.

Evaluation of layered zinc hydroxide nitrate and zinc/nickel double hydroxide salts in the removal of chromate ions from solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bortolaz de Oliveira, Henrique; Wypych, Fernando, E-mail: wypych@ufpr.br

Layered zinc hydroxide nitrate (ZnHN) and Zn/Ni layered double hydroxide salts were synthesized and used to remove chromate ions from solutions at pH 8.0. The materials were characterized by many instrumental techniques before and after chromate ion removal. ZnHN decomposed after contact with the chromate solution, whereas the layered structure of Zn/Ni hydroxide nitrate (Zn/NiHN) and Zn/Ni hydroxide acetate (Zn/NiHA) remained their layers intact after the topotactic anionic exchange reaction, only changing the basal distances. ZnHN, Zn/NiHN, and Zn/NiHA removed 210.1, 144.8, and 170.1 mg of CrO{sub 4}{sup 2−}/g of material, respectively. Although the removal values obtained for Zn/NiHN andmore » Zn/NiHA were smaller than the values predicted for the ideal formulas of the solids (194.3 and 192.4 mg of CrO{sub 4}{sup 2−}/g of material, respectively), the measured capacities were higher than the values achieved with many materials reported in the literature. Kinetic experiments showed the removal reaction was fast. To facilitate the solid/liquid separation process after chromium removal, Zn/Ni layered double hydroxide salts with magnetic supports were also synthesized, and their ability to remove chromate was evaluated. - Highlights: • Zinc hydroxide nitrate and Zn/Ni hydroxide nitrate or acetate were synthesized. • The interlayer anions were replaced by chromate anions at pH=8.0. • Only Zn/Ni hydroxide nitrate or acetate have the structure preserved after exchange. • Fast exchange reaction and high capacity of chromate removal were observed. • Magnetic materials were obtained to facilitate the solids removal the from solutions.« less

Test of an argon cusp plasma for tin LPP power scaling

NASA Astrophysics Data System (ADS)

McGeoch, Malcolm W.

2015-03-01

Scaling the power of the tin droplet laser-produced-plasma (LPP) extreme ultraviolet (EUV) source to 500W has eluded the industry after a decade of effort. In 2014 we proposed [2] a solution: placing the laser-plasma interaction region within an argon plasma in a magnetic cusp. This would serve to ionize tin atoms and guide them to a large area annular beam dump. We have since demonstrated the feasibility of this approach. We present first results from a full-scale test plasma at power levels relevant to the generation of at least 200W, showing both that the argon cusp plasma is very stable, and that its geometrical properties are ideal for the transport of exhaust power and tin to the beam dump.

REMOVAL OF CERTAIN FISSION PRODUCT METALS FROM LIQUID BISMUTH COMPOSITIONS

DOEpatents

Dwyer, O.E.; Howe, H.E.; Avrutik, E.R.

1959-11-24

A method is described for purifying a solution of urarium in liquid bismuth containing at least one metal from the group consisting of selenium, tellurium, palladium, ruthenium, rhodium, niobium, and zirconium. The solution is contacted with zinc in an inert atmosphere to form a homogeneous melt, a solid zinc phase is formed, and the zinc phase containing the metal is separated from the melt.

Structural, morphological and gas sensing study of zinc doped tin oxide nanoparticles synthesized via hydrothermal technique

NASA Astrophysics Data System (ADS)

Singh, Davender; Kundu, Virender Singh; Maan, A. S.

2016-07-01

The pure and Zn-doped SnO2 nanoparticles were prepared successfully by hydrothermal route on large scale having different doping concentration of zinc from 0 to 0.20%. The calcined nanoparticles were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) for structural and morphological studies. XRD analyses reveal that the nanoparticles of these doping concentrations are polycrystalline in nature and existed as tetragonal rutile structure, SEM study of images confirms the existence of very small, homogeneously distributed, and spherical nanoparticles. The particles size of the nanoparticles was calculated by Scherrer formula and was found in the range of 9-21 nm. The presence of dopant (i.e. zinc) and formation of Sn-O phase and hydrous nature of Zn-doped SnO2 nanoparticles are confirmed by EDX and FTIR study. The gas sensing properties of pure and Zn-doped SnO2 nanoparticles were investigated for various concentrations of methanol, ethanol and acetone at different operating temperatures and it has been found that with doping concentration of zinc (x = 0.20%) shows the maximum response 78% to methanol, 65% to ethanol and 62% to acetone respectively at different operating temperature within the measurement limit for a concentration of 100 ppm of each gases.

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Gary S.; Bluhm, Martin; Coffey, James

2011-01-02

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources ofmore » elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.« less

PROCESS FOR RECOVERY OF URANIUM VALUES FROM IMPURE SOLUTIONS THEREOF

DOEpatents

Kilner, S.B.

1959-11-01

A process is presented for the recovery of uraninm values from impure solutions which are obtained, for example, by washing residual uranium salt or uranium metal deposits from stainless steel surfaces using an aqueous or certain acidic aqueous solutions. The solutions include uranyl and oxidized iron, chromium, nickel, and copper ions and may contain manganese, zinc, and silver ions. In accordance with one procedure. the uranyl ions are reduced to the uranous state, and the impurity ions are complexed with cyanide under acidic conditions. The solution is then treated with ammonium hydroxide or alkali metal hydroxide to precipitate uranous hydroxide away from the complexed impurity ions in the solution. Alternatively, an excess of alkali metal cyanide is added to the reduced solution until the solution becomes sufficiently alkaline for the uranons hydroxide to precipitate. An essential feature in operating the process is in maintaining the pH of the solution sufficiently acid during the complexing operation to prevent the precipitation of the impurity metal hydroxides.

Linear topology in amorphous metal oxide electrochromic networks obtained via low-temperature solution processing

NASA Astrophysics Data System (ADS)

Llordés, Anna; Wang, Yang; Fernandez-Martinez, Alejandro; Xiao, Penghao; Lee, Tom; Poulain, Agnieszka; Zandi, Omid; Saez Cabezas, Camila A.; Henkelman, Graeme; Milliron, Delia J.

2016-12-01

Amorphous transition metal oxides are recognized as leading candidates for electrochromic window coatings that can dynamically modulate solar irradiation and improve building energy efficiency. However, their thin films are normally prepared by energy-intensive sputtering techniques or high-temperature solution methods, which increase manufacturing cost and complexity. Here, we report on a room-temperature solution process to fabricate electrochromic films of niobium oxide glass (NbOx) and `nanocrystal-in-glass’ composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass) via acid-catalysed condensation of polyniobate clusters. A combination of X-ray scattering and spectroscopic characterization with complementary simulations reveals that this strategy leads to a unique one-dimensional chain-like NbOx structure, which significantly enhances the electrochromic performance, compared to a typical three-dimensional NbOx network obtained from conventional high-temperature thermal processing. In addition, we show how self-assembled ITO-in-NbOx composite films can be successfully integrated into high-performance flexible electrochromic devices.

Recovering Zinc From Discarded Tires

NASA Technical Reports Server (NTRS)

Du Fresne, E. R.

1984-01-01

Zinc sulfate monohydrate sold at profit. Shredded tire material steeped in three sulfuric acid baths to extract zinc. Final product removed by evaporating part of solution until product crystallizes out. Recovered as zinc sulfate monohydrate and sold as fertilizer or for general use.

Luminescent zinc(ii) and copper(i) complexes for high-performance solution-processed monochromic and white organic light-emitting devices† †Electronic supplementary information (ESI) available: Experimental procedures, device performances, and computational details. CCDC 1054456, 1400003 and 1400004. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4sc03161j Click here for additional data file. Click here for additional data file.

PubMed Central

Cheng, Gang; So, Gary Kwok-Ming; To, Wai-Pong; Chen, Yong; Kwok, Chi-Chung; Ma, Chensheng; Guan, Xiangguo; Chang, Xiaoyong; Kwok, Wai-Ming

2015-01-01

The synthesis and spectroscopic properties of luminescent tetranuclear zinc(ii) complexes of substituted 7-azaindoles and a series of luminescent copper(i) complexes containing 7,8-bis(diphenylphosphino)-7,8-dicarba-nido-undecaborate ligand are described. These complexes are stable towards air and moisture. Thin film samples of the luminescent copper(i) complexes in 2,6-dicarbazolo-1,5-pyridine and zinc(ii) complexes in poly(methyl methacrylate) showed emission quantum yields of up to 0.60 (for Cu-3) and 0.96 (for Zn-1), respectively. Their photophysical properties were examined by ultrafast time-resolved emission spectroscopy, temperature dependent emission lifetime measurements and density functional theory calculations. Monochromic blue and orange solution-processed OLEDs with these Zn(ii) and Cu(i) complexes as light-emitting dopants have been fabricated, respectively. Maximum external quantum efficiency (EQE) of 5.55% and Commission Internationale de l'Eclairage (CIE) coordinates of (0.16, 0.19) were accomplished with the optimized Zn-1-OLED while these values were, respectively 15.64% and (0.48, 0.51) for the optimized Cu-3-OLED. Solution-processed white OLEDs having maximum EQE of 6.88%, CIE coordinates of (0.42, 0.44), and colour rendering index of 81 were fabricated by using these luminescent Zn(ii) and Cu(i) complexes as blue and orange light-emitting dopant materials, respectively. PMID:29142704

Thermodynamic Temperature Measurement to the Indium Point Based on Radiance Comparison

NASA Astrophysics Data System (ADS)

Yamaguchi, Y.; Yamada, Y.

2017-04-01

A multi-national project (the EMRP InK project) was completed recently, which successfully determined the thermodynamic temperatures of several of the high-temperature fixed points above the copper point. The National Metrology Institute of Japan contributed to this project with its newly established absolute spectral radiance calibration capability. In the current study, we have extended the range of thermodynamic temperature measurement to below the copper point and measured the thermodynamic temperatures of the indium point (T_{90} = 429.748 5 K), tin point (505.078 K), zinc point (692.677 K), aluminum point (933.473 K) and the silver point (1 234.93 K) by radiance comparison against the copper point, with a set of radiation thermometers having center wavelengths ranging from 0.65 μm to 1.6 μm. The copper-point temperature was measured by the absolute radiation thermometer which was calibrated by radiance method traceable to the electrical substitution cryogenic radiometer. The radiance of the fixed-point blackbodies was measured by standard radiation thermometers whose spectral responsivity and nonlinearity are precisely evaluated, and then the thermodynamic temperatures were determined from radiance ratios to the copper point. The values of T-T_{90} for the silver-, aluminum-, zinc-, tin- and indium-point cells were determined as -4 mK (U = 104 mK, k=2), -99 mK (88 mK), -76 mK (76 mK), -68 mK (163 mK) and -42 mK (279 mK), respectively.

Color in the corners: ITO-free white OLEDs with angular color stability.

PubMed

Gaynor, Whitney; Hofmann, Simone; Christoforo, M Greyson; Sachse, Christoph; Mehra, Saahil; Salleo, Alberto; McGehee, Michael D; Gather, Malte C; Lüssem, Björn; Müller-Meskamp, Lars; Peumans, Peter; Leo, Karl

2013-08-07

High-efficiency white OLEDs fabricated on silver nanowire-based composite transparent electrodes show almost perfectly Lambertian emission and superior angular color stability, imparted by electrode light scattering. The OLED efficiencies are comparable to those fabricated using indium tin oxide. The transparent electrodes are fully solution-processable, thin-film compatible, and have a figure of merit suitable for large-area devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

PubMed

Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

2016-01-27

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

Single-molecule interfacial electron transfer dynamics in solar energy conversion

NASA Astrophysics Data System (ADS)

Dhital, Bharat

This dissertation work investigated the parameters affecting the interfacial electron transfer (ET) dynamics in dye-semiconductor nanoparticles (NPs) system by using single-molecule fluorescence spectroscopy and imaging combined with electrochemistry. The influence of the molecule-substrate electronic coupling, the molecular structure, binding geometry on the surface and the molecule-attachment surface chemistry on interfacial charge transfer processes was studied on zinc porphyrin-TiO2 NP systems. The fluorescence blinking measurement on TiO2 NP demonstrated that electronic coupling regulates dynamics of charge transfer processes at the interface depending on the conformation of molecule on the surface. Moreover, semiconductor surface charge induced electronic coupling of molecule which is electrostatically adsorbed on the semiconductor surface also predominantly alters the ET dynamics. Furthermore, interfacial electric field and electron accepting state density dependent ET dynamics has been dissected in zinc porphyrin-TiO2 NP system by observing the single-molecule fluorescence blinking dynamics and fluorescence lifetime with and without applied bias. The significant difference in fluorescence fluctuation and lifetime suggested the modulation of charge transfer dynamics at the interface with external electric field perturbation. Quasi-continuous distribution of fluorescence intensity with applied negative potential was attributed to the faster charge recombination due to reduced density of electron accepting states. The driving force and electron accepting state density ET dependent dynamics has also been probed in zinc porphyrin-TiO2 NP and zinc porphyrin-indium tin oxide (ITO) systems. Study of a molecule adsorbed on two different semiconductors (ITO and TiO2), with large difference in electron densities and distinct driving forces, allows us to observe the changes in rates of back electron transfer process reflected by the suppressed fluorescence blinking of molecule on ITO surface. Finally, the electric field effect on the interface properties has been probed by using surface-enhanced Raman spectroscopy and supported by density functional theory calculations in alizarin-TiO2 system. The perturbation, created by the external potential, has been observed to cause a shift and/or splitting interfacial bond vibrational mode, typical indicator of the coupling energy changes between alizarin and TiO2. Such splitting provides evidence for electric field-dependent electronic coupling changes that have a significant impact on the interfacial electron transfer dynamics.

Inorganic chemistry of water and bed sediment in selected tributaries of the south Umpqua River, Oregon, 1998

USGS Publications Warehouse

Hinkle, Stephen R.

1999-01-01

Ten sites on small South Umpqua River tributaries were sampled for inorganic constituents in water and streambed sediment. In aqueous samples, high concentrations (concentrations exceeding U.S. Environmental Protection Agency criterion continuous concentration for the protection of aquatic life) of zinc, copper, and cadmium were detected in Middle Creek at Silver Butte, and the concentration of zinc was high at Middle Creek near Riddle. Similar patterns of trace-element occurrence were observed in streambed-sediment samples.The dissolved aqueous load of zinc carried by Middle Creek along the stretch between the upper site (Middle Creek at Silver Butte) and the lower site (Middle Creek near Riddle) decreased by about 0.3 pounds per day. Removal of zinc from solution between the upper and lower sites on Middle Creek evidently was occurring at the time of sampling. However, zinc that leaves the aqueous phase is not necessarily permanently lost from solution. For example, zinc solubility is pH-dependent, and a shift between solid and aqueous phases towards release of zinc to solution in Middle Creek could occur with a perturbation in stream-water pH. Thus, at least two potentially significant sources of zinc may exist in Middle Creek: (1) the upstream source(s) producing the observed high aqueous zinc concentrations and (2) the streambed sediment itself (zinc-bearing solid phases and/or adsorbed zinc). Similar behavior may be exhibited by copper and cadmium because these trace elements also were present at high concentrations in streambed sediment in the Middle Creek Basin.

Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C

NASA Astrophysics Data System (ADS)

Liu, Fangmei; Qian, Chuan; Sun, Jia; Liu, Peng; Huang, Yulan; Gao, Yongli; Yang, Junliang

2016-04-01

Lithium-doped zinc oxide (Li-ZnO) thin-film transistors (TFTs) were fabricated by solution process at the low temperatures ranged from 100 to 300 °C. Li-ZnO TFTs fabricated at 300 °C under nitrogen condition showed a mobility of 1.2 cm2/Vs. Most importantly, the mobility of Li-ZnO TFT devices fabricated at 100 °C could be increased significantly from 0.08 to 0.4 cm2/Vs by using double spin-coated and UV irradiation-treated Li-ZnO film, and the on-/off-current ratio is in the order of 106. Notably, the XPS analyses proved that the performance improvement was originated from the chemical composition or stoichiometry evolution, in which the hydroxide was converted into metal oxide and accelerated the formation of the oxygen vacancies. Furthermore, low-voltage operating Li-ZnO TFTs were demonstrated by using a high-capacitance ion gel gate dielectrics. The Li-ZnO TFTs with an operating voltage as low as 2 V exhibited the carrier mobilities of 2.1 and 0.65 cm2/Vs for the devices treated at 300 and 100 °C, respectively. The low-temperature, solution-processed Li-ZnO TFTs showed greatly potential applications in flexible displays, smart label, and sensors.

Fabrication of flexible indium tin oxide-free polymer solar cells with silver nanowire transparent electrode

NASA Astrophysics Data System (ADS)

Lin, Ming-Yi; Chen, Tsun-Jui; Xu, Wei-Feng; Hsiao, Li-Jen; Budiawan, Widhya; Tu, Wei-Chen; Chen, Shih-Lun; Chu, Chih-Wei; Wei, Pei-Kuen

2018-03-01

Flexible indium tin oxide (ITO)-free poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PC61BM) solar cells with a spin-coated silver nanowire transparent electrode are demonstrated. The solution-processed silver nanowire thin film not only exhibits high transmission (∼87%), but also shows low sheet resistance R s (∼25 Ω/sq). For solar cells with a conventional structure, the power conversion efficiency (PCE) of devices based on silver nanowires can reach around 2.29%. For the inverted structure, the PCE of devices can reach 3.39%. Conventional and inverted flexible ITO-based P3HT:PC61BM solar cells are also fabricated as a reference for comparison. For both types of solar cells, the PCE of ITO-free devices is very close that of an ITO-based polymer solar cell.

Conductive indium-tin oxidenanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching between wire and tube growth modes by surface chemical modification of the template

NASA Astrophysics Data System (ADS)

Kovtyukhova, Nina I.; Mallouk, Thomas E.

2011-04-01

Tin-doped indium hydroxide (InSnOH) nanowires (NWs) and nanotubes (NTs) were grown from acidic aqueous solutions of inorganic precursors in a simple one-step electrochemically assisted deposition (EAD) process inside Au-plugged anodic aluminium oxide and polycarbonatemembranes. When the membranes were used without any pre-treatment, InSnOH crystals nucleated on the both the Au-cathode and pore wall surfaces. By adjusting the surface chemistry of Au or the pore walls, it was possible to switch between NW and NT growth modes. InSnOH was converted into indiumtin oxide (ITO) by annealing the InSnOH-filled membranes at 300 °C. The resulting wires and tubes were characterized by field emission scanning electron microscopy, transmission electron microscopy, X-ray and electron diffraction, Auger electron spectroscopy and electrical conductivity measurements. InSnOH and ITO NWs and NTs consisted of ~25-50 nm in size crystalline grains with the cubic crystal structures of In(OH)3 and In2O3, respectively, and showed essentially the same morphological features as planar ITO films made by the same method. Separate tin oxide/hydroxide phases were not observed by any of the characterization methods. After heating in air at 600 °C, the ITO NWs had resistivity on the order of 10°Ω cm. EAD is an inexpensive and scalable solution-based technique, and allows one to grow dense arrays of vertically aligned, crystalline and conductive ITO NWs and NTs.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

PubMed

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Historical trends in U.S. mineral statistics for selected non-ferrous metals

USGS Publications Warehouse

Piper, David Z.; Nokleberg, Warren J.

2002-01-01

Production figures for selected nonferrous metals-aluminum (including bauxite and alumina), copper, lead, tin, titanium, and zinc-by the United States, as well as other statistics for these commodities, show strong volatility during 20th century. Major shifts were driven by the Great Depression and the two World Wars, but other major temporal changes are also noted that are not directly related to such global crises. For example, the price of tin exhibited a strong maximum in the 1980's, which is unrelated to world production, but rather to failed efforts of the International Tin Council to control price. In the case of copper, U.S. exports have varied throughout the second half of the century, by more than a factor of 5. Such volatility might be explained in part by global economic conditions, at least throughout recent decades. Supporting the interpretation of the importance of foreign pressure on the domestic commodities market is a close correlation between domestic consumption of antimony and its elevated price in the mid 1980's,possibly pushed up mostly by the world dominance in production of this commodity by China. However, only very superficial explanations can be advanced for such relations before we have examined, in concert, information for a much larger suite of commodities.

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

NASA Astrophysics Data System (ADS)

Gao, Dan; Liu, Bo; Xu, Zhen; Wang, Heng; Xia, Yangyang; Wang, Lei; Zhu, Nanfei; Li, Ying; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2016-10-01

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin ( 4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

Multichannel Interdiffusion Driven FASnI3 Film Formation Using Aqueous Hybrid Salt/Polymer Solutions toward Flexible Lead-Free Perovskite Solar Cells.

PubMed

Xi, Jun; Wu, Zhaoxin; Jiao, Bo; Dong, Hua; Ran, Chenxin; Piao, Chengcheng; Lei, Ting; Song, Tze-Bin; Ke, Weijun; Yokoyama, Takamichi; Hou, Xun; Kanatzidis, Mercouri G

2017-06-01

Tin (Sn)-based perovskites are increasingly attractive because they offer lead-free alternatives in perovskite solar cells. However, depositing high-quality Sn-based perovskite films is still a challenge, particularly for low-temperature planar heterojunction (PHJ) devices. Here, a "multichannel interdiffusion" protocol is demonstrated by annealing stacked layers of aqueous solution deposited formamidinium iodide (FAI)/polymer layer followed with an evaporated SnI 2 layer to create uniform FASnI 3 films. In this protocol, tiny FAI crystals, significantly inhibited by the introduced polymer, can offer multiple interdiffusion pathways for complete reaction with SnI 2 . What is more, water, rather than traditional aprotic organic solvents, is used to dissolve the precursors. The best-performing FASnI 3 PHJ solar cell assembled by this protocol exhibits a power conversion efficiency (PCE) of 3.98%. In addition, a flexible FASnI 3 -based flexible solar cell assembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12% is demonstrated. This novel interdiffusion process can help to further boost the performance of lead-free Sn-based perovskites. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of employee exposure to organic tin compounds used as stabilizers at PVC processing facilities.

PubMed

Boraiko, Carol; Batt, John

2005-02-01

Organic tin compounds are primary substances used as heat stabilizers by the polyvinyl chloride (PVC) industry. The use of these compounds in the PVC industry is generally well controlled, usually by automated processes. This study was conducted to provide an overview of worker exposure to organic tin compounds at PVC processing facilities and to verify that these exposures are below the threshold limit value (TLV((R))) set by the American Conference of Governmental Industrial Hygienists for organic tin. The basis of the TLV indicates the principal concern is to minimize adverse effects on immune function and the central nervous system from airborne exposure to organic tin. The TLV has a skin designation based on the potential for percutaneous absorption; the TLVs for inhalation exposures are based on the presumption that there is no concurrent exposure via the skin and oral ingestion routes. Personal exposure monitoring was conducted following the National Institute for Occupational Safety and Health (NIOSH) 5504 sampling method and a modified version of the NIOSH analytical method. The results were reported as"total tin."The data indicated no average exposure levels for individual tasks exceeded the organic tin TLV, and 96%of results the samples were less than 20%of the TLV. Only 1 sample of 102 exceeded the TLV, and the individual was wearing appropriate respiratory protection. Subsequent investigation indicated the highest exposures occurred while the operators were conducting tasks that included manual handling of the organic tin compounds. These data suggest manual operations may have a greater potential for organic tin exposure.

Critical analysis of adsorption data statistically

NASA Astrophysics Data System (ADS)

Kaushal, Achla; Singh, S. K.

2017-10-01

Experimental data can be presented, computed, and critically analysed in a different way using statistics. A variety of statistical tests are used to make decisions about the significance and validity of the experimental data. In the present study, adsorption was carried out to remove zinc ions from contaminated aqueous solution using mango leaf powder. The experimental data was analysed statistically by hypothesis testing applying t test, paired t test and Chi-square test to (a) test the optimum value of the process pH, (b) verify the success of experiment and (c) study the effect of adsorbent dose in zinc ion removal from aqueous solutions. Comparison of calculated and tabulated values of t and χ 2 showed the results in favour of the data collected from the experiment and this has been shown on probability charts. K value for Langmuir isotherm was 0.8582 and m value for Freundlich adsorption isotherm obtained was 0.725, both are <1, indicating favourable isotherms. Karl Pearson's correlation coefficient values for Langmuir and Freundlich adsorption isotherms were obtained as 0.99 and 0.95 respectively, which show higher degree of correlation between the variables. This validates the data obtained for adsorption of zinc ions from the contaminated aqueous solution with the help of mango leaf powder.

Evaluation of layered zinc hydroxide nitrate and zinc/nickel double hydroxide salts in the removal of chromate ions from solutions

NASA Astrophysics Data System (ADS)

de Oliveira, Henrique Bortolaz; Wypych, Fernando

2016-11-01

Layered zinc hydroxide nitrate (ZnHN) and Zn/Ni layered double hydroxide salts were synthesized and used to remove chromate ions from solutions at pH 8.0. The materials were characterized by many instrumental techniques before and after chromate ion removal. ZnHN decomposed after contact with the chromate solution, whereas the layered structure of Zn/Ni hydroxide nitrate (Zn/NiHN) and Zn/Ni hydroxide acetate (Zn/NiHA) remained their layers intact after the topotactic anionic exchange reaction, only changing the basal distances. ZnHN, Zn/NiHN, and Zn/NiHA removed 210.1, 144.8, and 170.1 mg of CrO42-/g of material, respectively. Although the removal values obtained for Zn/NiHN and Zn/NiHA were smaller than the values predicted for the ideal formulas of the solids (194.3 and 192.4 mg of CrO42-/g of material, respectively), the measured capacities were higher than the values achieved with many materials reported in the literature. Kinetic experiments showed the removal reaction was fast. To facilitate the solid/liquid separation process after chromium removal, Zn/Ni layered double hydroxide salts with magnetic supports were also synthesized, and their ability to remove chromate was evaluated.

All-solution-processed PbS quantum dot solar modules

NASA Astrophysics Data System (ADS)

Jang, Jihoon; Shim, Hyung Cheoul; Ju, Yeonkyeong; Song, Jung Hoon; An, Hyejin; Yu, Jong-Su; Kwak, Sun-Woo; Lee, Taik-Min; Kim, Inyoung; Jeong, Sohee

2015-05-01

A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas.A rapid increase in power conversion efficiencies in colloidal quantum dot (QD) solar cells has been achieved recently with lead sulphide (PbS) QDs by adapting a heterojunction architecture, which consists of small-area devices associated with a vacuum-deposited buffer layer with metal electrodes. The preparation of QD solar modules by low-cost solution processes is required to further increase the power-to-cost ratio. Herein we demonstrate all-solution-processed flexible PbS QD solar modules with a layer-by-layer architecture comprising polyethylene terephthalate (PET) substrate/indium tin oxide (ITO)/titanium oxide (TiO2)/PbS QD/poly(3-hexylthiophene) (P3HT)/poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonate) (PEDOT : PSS)/Ag, with an active area of up to 30 cm2, exhibiting a power conversion efficiency (PCE) of 1.3% under AM 1.5 conditions (PCE of 2.2% for a 1 cm2 unit cell). Our approach affords trade-offs between power and the active area of the photovoltaic devices, which results in a low-cost power source, and which is scalable to larger areas. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01508a

Synthesis of SnO_2 nanoparticles by electrooxidation of tin in quaternary ammonium salt for application in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Abrari, Masoud; Ghanaatshoar, Majid; Hosseiny Davarani, Saied Saeed; Moazami, Hamid Reza; Kazeminezhad, Iraj

2017-05-01

A facile synthetic route has been employed to prepare tin oxide nanoparticles. The route comprises anodic dissolution of metallic tin in the presence of tetramethylammonium chloride called electrooxidation. The effect of experimental parameters was investigated with special focus on solution pH. The obtained nanostructures have been characterized by XRD, EDS, TEM, FESEM, FTIR and UV-visible studies. The results show that the solution pH has a critical influence on the nanoparticles properties. The hydrophilic feature of nanoparticles decreases with pH growth, whereas their mean size increases. On the other hand, the size distribution is much uniform for the samples prepared at low pH. Having achieved the nanoparticles by electrooxidation, the dye-sensitized solar cells based on the produced SnO_2 nanoparticles were fabricated and the influence of nanoparticles on their performance was investigated. By variation in solution pH, we prepared nanoparticles with different particle sizes and photoanodes with various dye-loading abilities. The dye absorption and consequently current density of cells increased in acidic case, and therefore, power conversion efficiency grew up by 33% in acidic synthetic environment.

Zinc Chloride Influence on The Resins Furan Polymerization to Foundry Moulds

NASA Astrophysics Data System (ADS)

de Miranda, Leila Figueiredo; Vale, Marcus; Júnior, Antonio Hortêncio Munhoz; Masson, Terezinha Jocelen; de Andrade e Silva, Leonardo Gondin

The resins used in foundry molds developed for the automotive market has led to major changes in the manufacturing method of foundry molds. The polymerization of these resins and a subsequent curing are used to connect to the foundry sand in a rigid structure capable of receiving and holding liquid metal. It is essential to know the process of polymerization of these resins and their impact on the final properties of the obtained molds, especially in the mechanical characteristics. In this work it was studied the influence of the addition of zinc chloride (in solution) in the sand-furan resin mixture, with the aim of reducing the relation between the extraction time intervals and time bench life. The results showed that addition of percentages of the order of 5.0wt% to 7.5wt% zinc chloride solution reduces this ratio between 10% and 17%; this means that the casting model may be extracted from the sand mass in a smaller time interval increasing the productivity of manufacturing molds. It was also observed that there was also an increase of 9% to 18% in bench life intervals.

Long-term surveillance of zinc implant in murine artery: Surprisingly steady biocorrosion rate.

PubMed

Drelich, Adam J; Zhao, Shan; Guillory, Roger J; Drelich, Jaroslaw W; Goldman, Jeremy

2017-08-01

Metallic zinc implanted into the abdominal aorta of rats out to 6months has been demonstrated to degrade while avoiding responses commonly associated with the restenosis of vascular implants. However, major questions remain regarding whether a zinc implant would ultimately passivate through the production of stable corrosion products or via a cell mediated fibrous encapsulation process that prevents the diffusion of critical reactants and products at the metal surface. Here, we have conducted clinically relevant long term in vivo studies in order to characterize late stage zinc implant biocorrosion behavior and products to address these critical questions. We found that zinc wires implanted in the murine artery exhibit steady corrosion without local toxicity for up to at least 20months post-implantation, despite a steady buildup of passivating corrosion products and intense fibrous encapsulation of the wire. Although fibrous encapsulation was not able to prevent continued implant corrosion, it may be related to the reduced chronic inflammation observed between 10 and 20months post-implantation. X-ray elemental and infrared spectroscopy analyses confirmed zinc oxide, zinc carbonate, and zinc phosphate as the main components of corrosion products surrounding the Zn implant. These products coincide with stable phases concluded from Pourbaix diagrams of a physiological solution and in vitro electrochemical impedance tests. The results support earlier predictions that zinc stents could become successfully bio-integrated into the arterial environment and safely degrade within a time frame of approximately 1-2years. Previous studies have shown zinc to be a promising candidate material for bioresorbable endovascular stenting applications. An outstanding question, however, is whether a zinc implant would ultimately passivate through the production of stable corrosion products or via a cell mediated tissue encapsulation process that prevented the diffusion of critical reactants and products at the metal surface. We found that zinc wires implanted in the murine artery exhibit steady corrosion for up to at least 20months post-implantation. The results confirm earlier predictions that zinc stents could safely degrade within a time frame of approximately 1-2years. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectronmore » spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.« less

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCO5) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCO5, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanismsmore » associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.« less

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

NASA Astrophysics Data System (ADS)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Comparative assessment of the microhardness and plastic degradation mechanism of deposited modulated coatings on mild steel

NASA Astrophysics Data System (ADS)

Fayomi, O. S. I.; Anawe, P. A. L.; Inegbenebor, A. O.; Udoye, N. E.

2018-05-01

Zinc based coatings modified with aluminium and tin inclusions were electrodeposited in chloride zinc sulfate electrolytes containing a metallic powder of titanium. It was found that presence of these particulates is suitable to obtain ZnAlSn-Ti composites coating that could help increase the microhardnesss characteristics and wear properties. The hardness and wear properties of the deposited coatings were examined with diamond base micro-hardness tester and CETR reciprocating sliding tester respectively. The structural properties were examined with the help of scanning electron microscope. It was observed that structural coating surface impact on the hardness propagation with increases from 33.4 to 299 kgf mm-2 (HVN40), and shows a considerably higher wear resistance from 2.351g/min to 0.002g/min. It is obvious that plastic deformation of the working steel structure is dependent on protective coating and the concentration of the individual particulate.

The effect of urea on microstructures of tin dioxide grown on Ti plate and its supercapacitor performance

NASA Astrophysics Data System (ADS)

Jinlong, Lv; Meng, Yang; Miura, Hideo

2017-02-01

The effects of urea on microstructures of SnO2 during hydrothermal process and its supercapacitor performance were investigated. The sphere SnO2 was formed on Ti plate in hydrothermal solution without urea, while the SnO2 micro-flowers were assembled by numerous few-layered nanopetals due to adding to urea during hydrothermal process. The separated SnO2 nanopetals arrays showed better electrochemical performance than sphere SnO2. The gap between SnO2 nanopetals promoted penetration of the electrolyte and induced high supercapacitive performance.

Surface pre-treatment of aluminium by cleaning, chemical ething and conversion coating

NASA Astrophysics Data System (ADS)

Zaki, Mohammad Hafizudden Mohd; Mohd, Yusairie; Isa, Nik Norziehana Che

2017-12-01

Surface pre-treatment is one of the critical treatments for surface modification of aluminium (Al). In this study, pre-treatment of Al surface involved three stages; (1) cleaning (polishing and degreasing), (2) chemical etching (alkaline and acid) and (3) conversion coating (ie: zincate treatment). Cleaning process of Al was conducted by polishing and degreasing with acetone while etching process was done by immersion in 1.25 M NaOH solution (i.e: alkaline etching) followed with acid etching using 8 M HNO3 solution. The zincate treatment was conducted via electroless coating method by immersion of Al into a bath solution containing 0.5 M Zn(NO3)2, 0.1 M HNO3 and 0.2 M NaBH4 (reducing agent) for one hour. Different temperatures (ie: 25 °C, 50 °C, 75 °C, 90 °C) of bath solutions at pH 4 were used to investigate the effect of temperature on zincate treatment. Surface morphology and chemical composition of the pre-treated Al were characterized using Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersion X-ray analysis (EDX), respectively. The results showed that oxide layer on Al surface decreased after chemical etching process. Temperature of zincate solution has significantly affected the conversion coating process of aluminium. It was found that zinc oxide (ZnO) and zinc borate (ZnO.B2O3) were dominantly formed after zincate treatment at high temperature (ie:90 °C) with curved blade-like structure and composition of Zn, B and O with 13.70 wt.%, 3.52 wt.% and 54.39 wt.%, respectively. However, zincate treatment at low temperature (ie:<50 °C) has produced low metallic Zn.

The speciation of aqueous zinc(II) bromide solutions to 500 °C and 900 MPa determined using Raman spectroscopy

USGS Publications Warehouse

Mibe, Kenji; Chou, I-Ming; Anderson, Alan J.; Mayanovic, Robert A.; Bassett, William A.

2009-01-01

A Raman spectral study was carried out on 3 solutions of varying concentration and bromide/zinc ratios. Spectra were collected at 11 different temperature-pressure conditions ranging from ambient to 500????C-0.9??GPa. Raman band assignments for zinc(II) bromide species reported in previous studies were used to determine the relative concentrations of ZnBr42-, ZnBr3-, ZnBr2, and ZnBr+ species at various temperatures and pressures. Our results are in close agreement with X-ray absorption spectroscopic (XAS) data, and confirm that the tetrabromo zinc(II) complex, ZnBr42-, is the predominant species up to 500????C in solutions having high Zn concentrations (1??m) and high bromide/zinc molar ratios ([Br]/[Zn] = 8). In agreement with previous solubility and Raman spectroscopic experiments, our measurements indicate that species with a lower number of halide ligands and charge are favored with increasing temperature in dilute solutions, and solutions with low bromide/zinc ratios ([Br]/[Zn] < 2.5). The Raman technique provides an independent experimental means of evaluating the quality of XAS analyses of data obtained from high temperature disordered systems. The combination of these two techniques provides complementary data on speciation and the structure of zinc(II) bromide complexes. The preponderance of the ZnBr42- species in highly saline brines at high temperature is consistent with the predominance of ZnCl42- in chloride-rich brines reported in previous XAS studies. Knowledge of Zn complexing in metal-rich highly saline brines is important for numerical models of ore deposition in high temperature systems such as skarns and porphyry-type deposits. ?? 2008 Elsevier B.V.

Comparative studies on acid leaching of zinc waste materials

NASA Astrophysics Data System (ADS)

Rudnik, Ewa; Włoch, Grzegorz; Szatan, Leszek

2017-11-01

Three industrial waste materials were characterized in terms of their elemental and phase compositions, leaching behaviour in 10% sulfuric acid solution as well as leaching thermal effects. Slag from melting of mixed metallic scrap contained about 50% Zn and 10% Pb. It consisted mainly of various oxides and oxy-chlorides of metals. Zinc spray metallizing dust contained about 77% Zn in form of zinc and/or zinc-iron oxides, zinc metal and Zn-Fe intermetallic. Zinc ash from hot dip galvanizing was a mixture of zinc oxide, metallic zinc and zinc hydroxide chloride and contained about 80% Zn. Dissolution efficiency of zinc from the first material was 80% (independently on the solid to liquid ratio, 50-150 kg/m3), while decrease of the efficacy from 80% to 60% with increased solid to liquid ratio for the two remaining materials was observed. Both increase in the temperature (20 °C to 35 °C) and agitation rate (300 rpm to 900 rpm) did not improve seriously the leaching results. In all cases, transfer of zinc ions to the leachate was accompanied by different levels of solution contamination, depending on the type of the waste. Leaching of the materials was exothermic with the similar reaction heats for two high oxide-type products (slag, zinc ash) and higher values for the spray metallizing dust.

Method of manufacturing superconductor wire

DOEpatents

Motowidlo, Leszek

2014-09-16

A method for forming Nb.sub.3Sn superconducting wire is provided. The method employs a powder-in-tube process using a high-tin intermetallic compound, such as MnSn.sub.2, for producing the Nb.sub.3Sn. The use of a high-tin intermetallic compound enables the process to perform hot extrusion without melting the high-tin intermetallic compound. Alternatively, the method may entail drawing the wire without hot extrusion.

Ignition Temperatures of Metals in Oxygen Atmospheres

NASA Technical Reports Server (NTRS)

Laurendeau, N. M.; Glassman, I.

1971-01-01

The ignition temperature of ten common non-toxic metals has been determined experimentally in an oxygen environment. In this investigation a induction furnace facility that emphasized the preignition surface.oxidation effects upon the ignition temperature was used. The bulk ignition temperatures of barium, bismuth, calcium, iron, lead, magnesium, molybdenum, strontium, tin, and zinc were found and compared to the previous results of Grosse and Conway. The differences in the results are attributed to how the heating cycle is carried out and how the cycle affects the surface oxide coat.

EXTRACTION OF URANYL NITRATE FROM AQUEOUS SOLUTIONS

DOEpatents

Furman, N.H.; Mundy, R.J.

1957-12-10

An improvement in the process is described for extracting aqueous uranyl nitrate solutions with an organic solvent such as ether. It has been found that the organic phase will extract a larger quantity of uranyl nitrate if the aqueous phase contains in addition to the uranyl nitrate, a quantity of some other soluble nitrate to act as a salting out agent. Mentioned as suitable are the nitrates of lithium, calcium, zinc, bivalent copper, and trivalent iron.

Contribution of tin in electrochemical properties of zinc antimonate nanostructures: An electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Balasubramaniam, M.; Balakumar, S.

2018-04-01

Tin (Sn) doped ZnSb2O6 nanostructures was synthesized by chemical precipitation method and was used as an electrode material for supercapacitors to explore its electrochemical stability and potentiality as energy storage materials. Their characteristic structural, morphological and compositional features were investigated through XRD, FESEM and XPS analysis. Results showed that the nanostructures have well ordered crystalline features with spherical particle morphology. As the size and morphology are the vital parameters in exhibiting better electrochemical properties, the prepared nanostructures exhibited a significant specific capacitance of 222 F/g at a current density of 0.5 A/g respectively. While charging and discharging for 1000 cycles, the capacitance retention was enhanced to 105.0% which depicts the stability and activeness of electrochemical sites present in the Sn doped ZnSb2O6 nanostructures even after cycling. Hence, the inclusion of Sn into ZnSb2O6 has contributed in improving the electrochemical properties thereby it represents itself as a potential electrode material for supercapacitors.

X-ray fluorescence analysis of yellow pigments in altarpieces by Valencian artists of the XV and XVI centuries

NASA Astrophysics Data System (ADS)

Ferrero, J. L.; Roldán, C.; Ardid, M.; Navarro, E.

1999-02-01

XRF analysis has allowed a quick and precise detection and identification of the inorganic elements that compose the yellow pigments in altarpieces of the XV and XVI centuries painted by the Valencian artists Miguel Alcañiz, Vicente Macip, Juan de Juanes, Hernando Yáñez de la Almedina and Hernando Llanos. The analyses have been carried out with an XRF portable system that consists of a tube of X-rays and detectors of Si(Li) and cadmium zinc telluride. This system has enabled a non-aggressive and non-destructive analysis of many pieces at the Museo de Bellas Artes of Valencia (Spain). Among the yellow pigments we have identified a pigment composed by lead and tin oxides named lead-tin yellow (Pb 2SnO 4), frequently used in European paintings from the XIV century until the first half of the XVIII century. This fact demonstrates the influence of elements and pictorial techniques from Europe to the region of Valencia.

Nickel and zinc isotope fractionation in hyperaccumulating and nonaccumulating plants.

PubMed

Deng, Teng-Hao-Bo; Cloquet, Christophe; Tang, Ye-Tao; Sterckeman, Thibault; Echevarria, Guillaume; Estrade, Nicolas; Morel, Jean-Louis; Qiu, Rong-Liang

2014-10-21

Until now, there has been little data on the isotope fractionation of nickel (Ni) in higher plants and how this can be affected by plant Ni and zinc (Zn) homeostasis. A hydroponic cultivation was conducted to investigate the isotope fractionation of Ni and Zn during plant uptake and translocation processes. The nonaccumulator Thlaspi arvense, the Ni hyperaccumulator Alyssum murale and the Ni and Zn hyperaccumulator Noccaea caerulescens were grown in low (2 μM) and high (50 μM) Ni and Zn solutions. Results showed that plants were inclined to absorb light Ni isotopes, presumably due to the functioning of low-affinity transport systems across root cell membrane. The Ni isotope fractionation between plant and solution was greater in the hyperaccumulators grown in low Zn treatments (Δ(60)Ni(plant-solution) = -0.90 to -0.63‰) than that in the nonaccumulator T. arvense (Δ(60)Ni(plant-solution) = -0.21‰), thus indicating a greater permeability of the low-affinity transport system in hyperaccumulators. Light isotope enrichment of Zn was observed in most of the plants (Δ(66)Zn(plant-solution) = -0.23 to -0.10‰), but to a lesser extent than for Ni. The rapid uptake of Zn on the root surfaces caused concentration gradients, which induced ion diffusion in the rhizosphere and could result in light Zn isotope enrichment in the hyperaccumulator N. caerulescens. In high Zn treatment, Zn could compete with Ni during the uptake process, which reduced Ni concentration in plants and decreased the extent of Ni isotope fractionation (Δ(60)Ni(plant-solution) = -0.11 to -0.07‰), indicating that plants might take up Ni through a low-affinity transport system of Zn. We propose that isotope composition analysis for transition elements could become an empirical tool to study plant physiological processes.

The C-Terminal Extension Unique to the Long Isoform of the Shelterin Component TIN2 Enhances Its Interaction with TRF2 in a Phosphorylation- and Dyskeratosis Congenita Cluster-Dependent Fashion.

PubMed

Nelson, Nya D; Dodson, Lois M; Escudero, Laura; Sukumar, Ann T; Williams, Christopher L; Mihalek, Ivana; Baldan, Alessandro; Baird, Duncan M; Bertuch, Alison A

2018-06-15

TIN2 is central to the shelterin complex, linking the telomeric proteins TRF1 and TRF2 with TPP1/POT1. Mutations in TINF2 , which encodes TIN2, that are found in dyskeratosis congenita (DC) result in very short telomeres and cluster in a region shared by the two TIN2 isoforms, TIN2S (short) and TIN2L (long). Here we show that TIN2L, but not TIN2S, is phosphorylated. TRF2 interacts more with TIN2L than TIN2S, and both the DC cluster and phosphorylation promote this enhanced interaction. The binding of TIN2L, but not TIN2S, is affected by TRF2-F120, which is also required for TRF2's interaction with end processing factors such as Apollo. Conversely, TRF1 interacts more with TIN2S than with TIN2L. A DC-associated mutation further reduces TIN2L-TRF1, but not TIN2S-TRF1, interaction. Cells overexpressing TIN2L or phosphomimetic TIN2L are permissive to telomere elongation, whereas cells overexpressing TIN2S or phosphodead TIN2L are not. Telomere lengths are unchanged in cell lines in which TIN2L expression has been eliminated by clustered regularly interspaced short palindromic repeat (CRISPR)/Cas9-mediated mutation. These results indicate that TIN2 isoforms are biochemically and functionally distinguishable and that shelterin composition could be fundamentally altered in patients with TINF2 mutations. Copyright © 2018 Nelson et al.