Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

NASA Astrophysics Data System (ADS)

Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

2018-04-01

Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

PubMed Central

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

Interface Schottky barrier engineering via strain in metal-semiconductor composites

NASA Astrophysics Data System (ADS)

Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

2016-01-01

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures. Electronic supplementary information (ESI) available: The changes of Au 5d DOS, valence bands of TiO2, the interfacial bond length and interfacial energy with strain, and the local DOS results for the change of SBH with strain. See DOI: 10.1039/c5nr05583k

Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures

NASA Astrophysics Data System (ADS)

Jin, Chenhao; Kim, Jonghwan; Utama, M. Iqbal Bakti; Regan, Emma C.; Kleemann, Hans; Cai, Hui; Shen, Yuxia; Shinner, Matthew James; Sengupta, Arjun; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wang, Feng

2018-05-01

Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS2)–tungsten diselenide (WSe2) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.

A bootstrap based space-time surveillance model with an application to crime occurrences

NASA Astrophysics Data System (ADS)

Kim, Youngho; O'Kelly, Morton

2008-06-01

This study proposes a bootstrap-based space-time surveillance model. Designed to find emerging hotspots in near-real time, the bootstrap based model is characterized by its use of past occurrence information and bootstrap permutations. Many existing space-time surveillance methods, using population at risk data to generate expected values, have resulting hotspots bounded by administrative area units and are of limited use for near-real time applications because of the population data needed. However, this study generates expected values for local hotspots from past occurrences rather than population at risk. Also, bootstrap permutations of previous occurrences are used for significant tests. Consequently, the bootstrap-based model, without the requirement of population at risk data, (1) is free from administrative area restriction, (2) enables more frequent surveillance for continuously updated registry database, and (3) is readily applicable to criminology and epidemiology surveillance. The bootstrap-based model performs better for space-time surveillance than the space-time scan statistic. This is shown by means of simulations and an application to residential crime occurrences in Columbus, OH, year 2000.

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

DOE PAGES

Yu, Yifei; Hu, Shi; Su, Liqin; ...

2014-12-03

Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

Interlayer electron-phonon coupling in WSe2/hBN heterostructures

NASA Astrophysics Data System (ADS)

Jin, Chenhao; Kim, Jonghwan; Suh, Joonki; Shi, Zhiwen; Chen, Bin; Fan, Xi; Kam, Matthew; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wu, Junqiao; Wang, Feng

2017-02-01

Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe2/hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe2 and a new hybrid state present only in WSe2/hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

PubMed

Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

2017-10-19

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE PAGES

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; ...

2016-12-14

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

[The application of the prospective space-time statistic in early warning of infectious disease].

PubMed

Yin, Fei; Li, Xiao-Song; Feng, Zi-Jian; Ma, Jia-Qi

2007-06-01

To investigate the application of prospective space-time scan statistic in the early stage of detecting infectious disease outbreaks. The prospective space-time scan statistic was tested by mimicking daily prospective analyses of bacillary dysentery data of Chengdu city in 2005 (3212 cases in 102 towns and villages). And the results were compared with that of purely temporal scan statistic. The prospective space-time scan statistic could give specific messages both in spatial and temporal. The results of June indicated that the prospective space-time scan statistic could timely detect the outbreaks that started from the local site, and the early warning message was powerful (P = 0.007). When the merely temporal scan statistic for detecting the outbreak was sent two days later, and the signal was less powerful (P = 0.039). The prospective space-time scan statistic could make full use of the spatial and temporal information in infectious disease data and could timely and effectively detect the outbreaks that start from the local sites. The prospective space-time scan statistic could be an important tool for local and national CDC to set up early detection surveillance systems.

Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures.

PubMed

Jin, Chenhao; Kim, Jonghwan; Utama, M Iqbal Bakti; Regan, Emma C; Kleemann, Hans; Cai, Hui; Shen, Yuxia; Shinner, Matthew James; Sengupta, Arjun; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wang, Feng

2018-05-25

Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )-tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field-free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

High pressure effect on optical gain in type-II InGaAs/GaAsSb nano-heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Nisha; Nirmal, H. K.; Yadav, Rashmi

This paper reports the simulation of optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain of the order of ∼ 9000 /cm in the heterostructure can be achieved at the lasing wavelength ∼ 1.95 µmmore » (SWIR region). The application of high pressure (2 and 5 GPa) on the structure shows that the gain as well as lasing wavelength both approach to higher values. Thus, the structure can be tuned externally by the application of high pressure.« less

A dewetting route to grow heterostructured nanoparticles based on thin film heterojunctions.

PubMed

Li, Junjie; Yin, Deqiang; Li, Qiang; Chen, Chunlin; Huang, Sumei; Wang, Zhongchang

2015-12-21

Heterostructured nanoparticles have received considerable attention for their various applications due to their unique and tunable functionalities with respect to their individual bulk constituents. However, the current wet chemical synthesis of multicomponent heterostructured nanoparticles is rather complicated. Here, we report a simple and quick method to fabricate Co-Au dumbbell arrays by dewetting Co/Au heterojunctions on a Si substrate and demonstrate that the Co-Au dumbbells vary in size from 2 to 28 nm. We further show by chemical mapping that Co bells are covered by a pseudomorphic Au wetting layer of ∼4 Å, preventing the bells from oxidation. By controlling the thickness of metal heterojunctions and the annealing time, the morphology of the Co-Au nanoparticle is found to be transformed from the dumbbell to the core shell. This facile route is demonstrated to be useful for fabricating other metal-metal and metal-oxide heterostructures and hence holds technological promise for functional applications.

Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

NASA Astrophysics Data System (ADS)

Maji, Tuhin Kumar; Tiwary, Krishna Kanhaiya; Karmakar, Debjani

2017-05-01

Doping nature of MoSe2, one of the promising Graphene analogous device material, can be tuned by controlling the concentration of functional groups in Graphene oxide (GO)@MoSe2 heterostructure. In this study, by first-principles simulation, we have observed that GO can be used as a carrier injection layer for MoSe2, where n or p type carriers are introduced within MoSe2 layer depending on the type and concentration of functional moieties in it. Both n and p-type Schottky barrier height modulations are investigated for different modeled configurations of the heterostructure. This combinatorial heterostructure can be a promising material for future electronic device application.

Maximizers in Lipschitz spacetimes are either timelike or null

NASA Astrophysics Data System (ADS)

Graf, Melanie; Ling, Eric

2018-04-01

We prove that causal maximizers in C 0,1 spacetimes are either timelike or null. This question was posed in Sämann and Steinbauer (2017 arXiv:1710.10887) since bubbling regions in C0, α spacetimes (α <1 ) can produce causal maximizers that contain a segment which is timelike and a segment which is null, see Chruściel and Grant (2012 Class. Quantum Grav. 29 145001). While C 0,1 spacetimes do not produce bubbling regions, the causal character of maximizers for spacetimes with regularity at least C 0,1 but less than C 1,1 was unknown until now. As an application we show that timelike geodesically complete spacetimes are C 0,1-inextendible.

Nanoscale Engineering of Heterostructured Anode Materials for Boosting Lithium-Ion Storage.

PubMed

Chen, Gen; Yan, Litao; Luo, Hongmei; Guo, Shaojun

2016-09-01

Rechargeable lithium-ion batteries (LIBs), as one of the most important electrochemical energy-storage devices, currently provide the dominant power source for a range of devices, including portable electronic devices and electric vehicles, due to their high energy and power densities. The interest in exploring new electrode materials for LIBs has been drastically increasing due to the surging demands for clean energy. However, the challenging issues essential to the development of electrode materials are their low lithium capacity, poor rate ability, and low cycling stability, which strongly limit their practical applications. Recent remarkable advances in material science and nanotechnology enable rational design of heterostructured nanomaterials with optimized composition and fine nanostructure, providing new opportunities for enhancing electrochemical performance. Here, the progress as to how to design new types of heterostructured anode materials for enhancing LIBs is reviewed, in the terms of capacity, rate ability, and cycling stability: i) carbon-nanomaterials-supported heterostructured anode materials; ii) conducting-polymer-coated electrode materials; iii) inorganic transition-metal compounds with core@shell structures; and iv) combined strategies to novel heterostructures. By applying different strategies, nanoscale heterostructured anode materials with reduced size, large surfaces area, enhanced electronic conductivity, structural stability, and fast electron and ion transport, are explored for boosting LIBs in terms of high capacity, long cycling lifespan, and high rate durability. Finally, the challenges and perspectives of future materials design for high-performance LIB anodes are considered. The strategies discussed here not only provide promising electrode materials for energy storage, but also offer opportunities in being extended for making a variety of novel heterostructured nanomaterials for practical renewable energy applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interface-engineered oxygen octahedral coupling in manganite heterostructures

NASA Astrophysics Data System (ADS)

Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

2017-12-01

Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low field sensors.

Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

Engineering charge transport by heterostructuring solution-processed semiconductors

NASA Astrophysics Data System (ADS)

Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

2017-06-01

Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

NASA Astrophysics Data System (ADS)

Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

2018-03-01

An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

Charge transport, interfacial interactions and synergistic mechanisms in BiNbO4/MWO4 (M = Zn and Cd) heterostructures for hydrogen production: insights from a DFT+U study.

PubMed

Opoku, Francis; Kuben Govender, Krishna; van Sittert, Cornelia Gertina Catharina Elizabeth; Poomani Govender, Penny

2017-10-25

In the 21st century, the growing demand of global energy is one of the key challenges. The photocatalytic generation of hydrogen has attracted extensive attention to discuss the increasing global demand for sustainable and clean energy. However, hydrogen evolution reactions normally use the economically expensive rare noble metals and the processes remain a challenge. Herein, low-cost BiNbO 4 /MWO 4 (010) heterostructures are studied for the first time to check their suitability towards photocatalytic hydrogen production. A theoretical study with the aid of density functional theory (DFT) is used to investigate the synergistic effect, ionisation energy, electron affinities, charge transfer, electronic properties and the underlying mechanism for hydrogen generation of BiNbO 4 /MWO 4 (010) heterostructures. The experimental band gaps of bulk ZnWO 4 , CdWO 4 and BiNbO 4 are well reproduced using the DFT+U method. The calculated band edge position shows a type-II staggered band alignment and the charge transfer between BiNbO 4 and MWO 4 monolayers results in a large interfacial built-in potential, which will favour the separation of charge carriers in the heterostructures. The effective mass of the photoinduced holes is higher compared to the electrons, making the heterostructures useful in hydrogen production. The relatively low ionisation energy and electron affinity for the heterostructures compared to the monolayers make them ideal for photocatalysis applications due to their small energy barrier for the injection of electrons and creation of holes. The BiNbO 4 /MWO 4 (010) heterostructures are more suitable for photocatalytic hydrogen production due to their strong reducing power relative to the H + /H 2 O potential. This study sheds light on the less known BiNbO 4 /ZnWO 4 (010) heterostructures and the fully explored electronic and optical properties will pave way for future photocatalytic water splitting applications.

Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures

NASA Astrophysics Data System (ADS)

Yang, Huihui; Gao, Feng; Dai, Mingjin; Jia, Dechang; Zhou, Yu; Hu, Pingan

2017-03-01

Two-dimensional (2D) layered materials, such as graphene, hexagonal boron nitride (h-BN), molybdenum disulfide (MoS{}2 ), have attracted tremendous interest due to their atom-thickness structures and excellent physical properties. h-BN has predominant advantages as the dielectric substrate in FET devices due to its outstanding properties such as chemically inert surface, being free of dangling bonds and surface charge traps, especially the large-band-gap insulativity. h-BN involved vertical heterostructures have been widely exploited during the past few years. Such heterostructures adopting h-BN as dielectric layers exhibit enhanced electronic performance, and provide further possibilities for device engineering. Besides, a series of intriguing physical phenomena are observed in certain vertical heterostructures, such as superlattice potential induced replication of Dirac points, band gap tuning, Hofstadter butterfly states, gate-dependent pseudospin mixing. Herein we focus on the rapid developments of h-BN synthesis and fabrication of vertical heterostructures devices based on h-BN, and review the novel properties as well as the potential applications of the heterostructures composed of h-BN. Project supported by the National Natural Science Foundation of China (Nos. 61390502, 21373068), the National Basic Research Program of China (No. 2013CB632900), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No. 51521003), and the Self-Planned Task of State Key Laboratory of Robotics and System (No. SKLRS201607B).

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

DOE PAGES

Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; ...

2016-09-21

Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also wemore » report a novel heterostructure composed of Ge and monolayer MoS 2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS 2. The electrical characteristics of Ge and MoS 2 in the Ge/MoS 2 heterostructure were remarkably different from those of isolated Ge and MoS 2. The field-effect conductivity type of the monolayer MoS 2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS 2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.« less

A geostatistical methodology for the optimal design of space-time hydraulic head monitoring networks and its application to the Valle de Querétaro aquifer.

PubMed

Júnez-Ferreira, H E; Herrera, G S

2013-04-01

This paper presents a new methodology for the optimal design of space-time hydraulic head monitoring networks and its application to the Valle de Querétaro aquifer in Mexico. The selection of the space-time monitoring points is done using a static Kalman filter combined with a sequential optimization method. The Kalman filter requires as input a space-time covariance matrix, which is derived from a geostatistical analysis. A sequential optimization method that selects the space-time point that minimizes a function of the variance, in each step, is used. We demonstrate the methodology applying it to the redesign of the hydraulic head monitoring network of the Valle de Querétaro aquifer with the objective of selecting from a set of monitoring positions and times, those that minimize the spatiotemporal redundancy. The database for the geostatistical space-time analysis corresponds to information of 273 wells located within the aquifer for the period 1970-2007. A total of 1,435 hydraulic head data were used to construct the experimental space-time variogram. The results show that from the existing monitoring program that consists of 418 space-time monitoring points, only 178 are not redundant. The implied reduction of monitoring costs was possible because the proposed method is successful in propagating information in space and time.

Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

PubMed

Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

2015-10-14

Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.

Fabrication and properties of nanoscale multiferroic heterostructures for application in magneto-electric random access memory (MERAM) devices

NASA Astrophysics Data System (ADS)

Kim, Gunwoo

Magnetoelectric random access memory (MERAM) has emerged as a promising new class of non-volatile solid-state memory device. It offers nondestructive reading along with low power consumption during the write operation. A common implementation of MERAM involves use of multiferroic tunneling junctions (MFTJs), which besides offering non-volatility are both electrically and magnetically tunable. Fundamentally, a MFTJ consists of a heterostructure of an ultrathin multiferroic or ferroelectric material as the active tunneling barrier sandwiched between ferromagnetic electrodes. Thereby, the MFTJ exhibits both tunnel electroresistance (TER) and tunnel magnetoresistance (TMR) effects with application of an electric and magnetic field, respectively. In this thesis work, we have developed two-dimensional (2D) thin-film multiferroic heterostructure METJ prototypes consisting of ultrathin ferroelectric BaTiO3 (BTO) layer and a conducting ferromagnetic La0.67Sr 0.33MnO3 (LSMO) electrode. The heteroepitaxial films are grown using the pulsed laser deposition (PLD) technique. This oxide heterostructure offers the opportunity to study the nano-scale details of the tunnel electroresistance (TER) effect using scanning probe microscopy techniques. We performed the measurements using the MFP-3D (Asylum Research) scanning probe microscope. The ultrathin BTO films (1.2-2.0 nm) grown on LSMO electrodes display both ferro- and piezo-electric properties and exhibit large tunnel resistance effect. We have explored the growth and properties of one-dimensional (1D) heterostructures, referred to as multiferoric nanowire (NW) heterostructures. The ferromagnetic/ferroelectric composite heterostructures are grown as sheath layers using PLD on lattice-matched template NWs, e.g. MgO, that are deposited by chemical vapor deposition utilizing the vapor-liquid-solid (VLS) mechanism. The one-dimensional geometry can substantially overcome the clamping effect of the substrate present in two-dimensional structures because of the reduced volume of the template. This leads to minimum constraint of displacements at the interface and thereby significantly enhances the magnetoelectric (ME) effect. We characterized the nanostructures using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results of our studies utilizing multiferroic 2-D thin films and 1-D NW architectures clearly demonstrate the potential of these heterostructures for future device applications, such as in MERAM, data storage, magneto-electric field sensors, etc.

Synthesis of Metal-Oxide/Carbon-Fiber Heterostructures and Their Properties for Organic Dye Removal and High-Temperature CO2 Adsorption

NASA Astrophysics Data System (ADS)

Shao, Liangzhi; Nie, Shibin; Shao, Xiankun; Zhang, LinLin; Li, Benxia

2018-03-01

One-dimensional metal-oxide/carbon-fiber (MO/CF) heterostructures were prepared by a facile two-step method using the natural cotton as a carbon source the low-cost commercial metal salts as precursors. The metal oxide nanostructures were first grown on the cotton fibers by a solution chemical deposition, and the metal-oxide/cotton heterostructures were then calcined and carbonized in nitrogen atmosphere. Three typical MO/CF heterostructures of TiO2/CF, ZnO/CF, and Fe2O3/CF were prepared and characterized. The loading amount of the metal oxide nanostructures on carbon fibers can be tuned by controlling the concentration of metal salt in the chemical deposition process. Finally, the performance of the as-obtained MO/CF heterostructures for organic dye removal from water was tested by the photocatalytic degradation under a simulated sunlight, and their properties of high-temperature CO2 adsorption were predicted by the temperature programmed desorption. The present study would provide a desirable strategy for the synthesis of MO/CF heterostructures for various applications.

Facile synthesis of hierarchical Ag3PO4/TiO2 nanofiber heterostructures with highly enhanced visible light photocatalytic properties

NASA Astrophysics Data System (ADS)

Xie, Jinlei; Yang, Yefeng; He, Haiping; Cheng, Ding; Mao, Minmin; Jiang, Qinxu; Song, Lixin; Xiong, Jie

2015-11-01

Heterostructured semiconductor nanostructures have provoked great interest in the areas of energy, environment and catalysis. Herein, we report a novel hierarchical Ag3PO4/TiO2 heterostructure consisting of nearly spherical Ag3PO4 particles firmly coupled on the surface of TiO2 nanofibers (NFs). The construction of Ag3PO4/TiO2 heterostructure with tailored morphologies, compositions and optical properties was simply achieved via a facile and green synthetic strategy involving the electrospinning and solution-based processes. Owing to the synergetic effects of the components, the resulting hybrid heterostructures exhibited much improved visible light photocatalytic performance, which could degrade the RhB dye completely in 7.5 min. In addition, the coupling of Ag3PO4 particles with UV-light-sensitive TiO2 NFs enabled full utilization of solar energy and less consumption of noble metals, significantly appealing for their practical use in new energy sources and environmental issues. The developed synthetic strategy was considered to be applicable for the rational design and construction of other heterostructured catalysts.

Self-assembly of electronically abrupt borophene/organic lateral heterostructures

PubMed Central

Liu, Xiaolong; Wei, Zonghui; Balla, Itamar; Mannix, Andrew J.; Guisinger, Nathan P.; Luijten, Erik; Hersam, Mark C.

2017-01-01

Two-dimensional boron sheets (that is, borophene) have recently been realized experimentally and found to have promising electronic properties. Because electronic devices and systems require the integration of multiple materials with well-defined interfaces, it is of high interest to identify chemical methods for forming atomically abrupt heterostructures between borophene and electronically distinct materials. Toward this end, we demonstrate the self-assembly of lateral heterostructures between borophene and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These lateral heterostructures spontaneously form upon deposition of PTCDA onto submonolayer borophene on Ag(111) substrates as a result of the higher adsorption enthalpy of PTCDA on Ag(111) and lateral hydrogen bonding among PTCDA molecules, as demonstrated by molecular dynamics simulations. In situ x-ray photoelectron spectroscopy confirms the weak chemical interaction between borophene and PTCDA, while molecular-resolution ultrahigh-vacuum scanning tunneling microscopy and spectroscopy reveal an electronically abrupt interface at the borophene/PTCDA lateral heterostructure interface. As the first demonstration of a borophene-based heterostructure, this work will inform emerging efforts to integrate borophene into nanoelectronic applications. PMID:28261662

Novel engineered compound semiconductor heterostructures for advanced electronics applications

NASA Astrophysics Data System (ADS)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Quantum estimation of parameters of classical spacetimes

NASA Astrophysics Data System (ADS)

Downes, T. G.; van Meter, J. R.; Knill, E.; Milburn, G. J.; Caves, C. M.

2017-11-01

We describe a quantum limit to the measurement of classical spacetimes. Specifically, we formulate a quantum Cramér-Rao lower bound for estimating the single parameter in any one-parameter family of spacetime metrics. We employ the locally covariant formulation of quantum field theory in curved spacetime, which allows for a manifestly background-independent derivation. The result is an uncertainty relation that applies to all globally hyperbolic spacetimes. Among other examples, we apply our method to the detection of gravitational waves with the electromagnetic field as a probe, as in laser-interferometric gravitational-wave detectors. Other applications are discussed, from terrestrial gravimetry to cosmology.

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

NASA Astrophysics Data System (ADS)

Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

2018-04-01

The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

Lateral topological crystalline insulator heterostructure

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

2017-06-01

The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

Parallel stitching of 2D materials

DOE PAGES

Ling, Xi; Wu, Lijun; Lin, Yuxuan; ...

2016-01-27

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

Modulation of band gap by an applied electric field in BN-based heterostructures

NASA Astrophysics Data System (ADS)

Luo, M.; Xu, Y. E.; Zhang, Q. X.

2018-05-01

First-principles density functional theory (DFT) calculations are performed on the structural and electronic properties of the SiC/BN van der Waals (vdW) heterostructures under an external electric field (E-field). Our results reveal that the SiC/BN vdW heterostructure has a direct band gap of 2.41 eV in the raw. The results also imply that electrons are likely to transfer from BN to SiC monolayer due to the deeper potential of BN monolayer. It is also observed that, by applying an E-field, ranging from -0.50 to +0.65 V/Å, the band gap decreases from 2.41 eV to zero, which presents a parabola-like relationship around 0.0 V/Å. Through partial density of states (PDOS) plots, it is revealed that, p orbital of Si, C, B, and N atoms are responsible for the significant variations of band gap. These obtained results predict that, the electric field tunable band gap of the SiC/BN vdW heterostructures carries potential applications for nanoelectronics and spintronic device applications.

GaAs-based micro/nanomechanical resonators

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroshi

2017-10-01

Micro/nanomechanical resonators have been extensively studied both for device applications, such as high-performance sensors and high-frequency devices, and for fundamental science, such as quantum physics in macroscopic objects. The advantages of GaAs-based semiconductor heterostructures include improved mechanical properties through strain engineering, highly controllable piezoelectric transduction, carrier-mediated optomechanical coupling, and hybridization with quantum low-dimensional structures. This article reviews our recent activities, as well as those of other groups, on the physics and applications of mechanical resonators fabricated using GaAs-based heterostructures.

Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

NASA Astrophysics Data System (ADS)

Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.

2016-11-01

Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.

Tunable Schottky barrier and electronic properties in borophene/g-C2N van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Jiang, J. W.; Wang, X. C.; Song, Y.; Mi, W. B.

2018-05-01

By stacking different layers of two dimensional (2D) monolayer materials, the electronic properties of the 2D van der Waals (vdW) heterostructures can be tailored. However, the Schottky barrier formed between 2D semiconductor and metallic electrode has greatly limited the application of 2D semiconductor in nanoelectronic and optoelectronic devices. Herewith, we investigate the electronic properties of borophene/g-C2N vdW heterostructures by first-principles calculations. The results indicate that electronic structures of borophene and g-C2N are preserved in borophene/g-C2N vdW heterostructures. Meanwhile, upon the external electric field, a transition from the n-type Schottky contact to Ohmic contact is induced, and the carrier concentration between the borophene and g-C2N interfaces can be tuned. These results are expected to provide useful insight in the nanoelectronic and optoelectronic devices based on the borophene/g-C2N vdW heterostructures.

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

NASA Astrophysics Data System (ADS)

Gkanatsiou, A.; Lioutas, Ch. B.; Frangis, N.; Polychroniadis, E. K.; Prystawko, P.; Leszczynski, M.

2017-03-01

AlGaN/GaN buffer heterostructures were grown on "on axis" and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved after full AlN layer growth. Step-graded AlGaN layers were introduced, in order to prevent the stress relaxation and to work as a dislocation filter. Thus, a crack-free smooth surface of the final GaN epitaxial layer is achieved in both cases, making the buffer structure ideal for the forthcoming growth of the heterostructure (used for HEMT device applications). Finally, the growth of the AlGaN/GaN heterostructure on top presents characteristic and periodic undulations (V-pits) on the surface, due to strain relaxation reasons. The AlN interlayer grown in between the heterostructure demonstrates an almost homogeneous thickness, probably reinforcing the 2DEG electrical characteristics.

nomalous Interface and Surface Strontium Segregation in (La 1-ySr y) 2CoO 4 /La 1-xSr xCoO 3- Heterostructured Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Zhenxing; Yacoby, Yuzhak; Gadre, Milind

2014-01-01

Heterostructured materials have shown unusual physiochemical properties at the interfaces such as two dimensional electron gas systems, high-temperature superconductivity, and enhanced catalysis. Here we report the first atomic-scale evidence of the microscopic structure of a perovskite/Ruddlesden-Popper heterostructure (having La1-xSrxCoO3- /(La1-ySry)2CoO4 ), and anomalous strontium segregation at the interface and in the Ruddlesden-Popper structure using direct X-ray methods combined with ab initio calculations. The remarkably enhanced activity of such heterostructured surfaces relative to bulk perovskite and Ruddlesden-Popper oxides previously shown for oxygen electrocatalysis at elevated temperatures can be attributed to reduced thermodynamic penalty of oxygen vacancies in the oxide structure associatedmore » with Sr segregation observed in the heterostructure. Our findings provide insights for the design of highly active catalysts for energy conversion and storage applications.« less

Conformal Yano-Killing Tensors for Space-times with Cosmological Constant

NASA Astrophysics Data System (ADS)

Czajka, P.; Jezierski, J.

We present a new method for constructing conformal Yano-Killing tensors in five-di\\-men\\-sio\\-nal Anti-de Sitter space-time. The found tensors are represented in two different coordinate systems. We also discuss, in terms of CYK tensors, global charges which are well defined for asymptotically (five-dimensional) Anti-de Sitter space-time. Additionally in Appendix we present our own derivation of conformal Killing one-forms in four-dimensional Anti-de Sitter space-time as an application of the Theorem presented in the paper.

Real-time Space-time Integration in GIScience and Geography.

PubMed

Richardson, Douglas B

2013-01-01

Space-time integration has long been the topic of study and speculation in geography. However, in recent years an entirely new form of space-time integration has become possible in GIS and GIScience: real-time space-time integration and interaction. While real-time spatiotemporal data is now being generated almost ubiquitously, and its applications in research and commerce are widespread and rapidly accelerating, the ability to continuously create and interact with fused space-time data in geography and GIScience is a recent phenomenon, made possible by the invention and development of real-time interactive (RTI) GPS/GIS technology and functionality in the late 1980s and early 1990s. This innovation has since functioned as a core change agent in geography, cartography, GIScience and many related fields, profoundly realigning traditional relationships and structures, expanding research horizons, and transforming the ways geographic data is now collected, mapped, modeled, and used, both in geography and in science and society more broadly. Real-time space-time interactive functionality remains today the underlying process generating the current explosion of fused spatiotemporal data, new geographic research initiatives, and myriad geospatial applications in governments, businesses, and society. This essay addresses briefly the development of these real-time space-time functions and capabilities; their impact on geography, cartography, and GIScience; and some implications for how discovery and change can occur in geography and GIScience, and how we might foster continued innovation in these fields.

Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating.

PubMed

Padilha, J E; Fazzio, A; da Silva, Antônio J R

2015-02-13

In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

Quantum field theory in curved graphene spacetimes, Lobachevsky geometry, Weyl symmetry, Hawking effect, and all that

NASA Astrophysics Data System (ADS)

Iorio, Alfredo; Lambiase, Gaetano

2014-07-01

The solutions of many issues, of the ongoing efforts to make deformed graphene a tabletop quantum field theory in curved spacetimes, are presented. A detailed explanation of the special features of curved spacetimes, originating from embedding portions of the Lobachevsky plane into R3, is given, and the special role of coordinates for the physical realizations in graphene is explicitly shown, in general, and for various examples. The Rindler spacetime is reobtained, with new important differences with respect to earlier results. The de Sitter spacetime naturally emerges, for the first time, paving the way to future applications in cosmology. The role of the Bañados, Teitelboim, and Zanelli (BTZ) black hole is also briefly addressed. The singular boundary of the pseudospheres, "Hilbert horizon," is seen to be closely related to the event horizon of the Rindler, de Sitter, and BTZ kind. This gives new, and stronger, arguments for the Hawking phenomenon to take place. An important geometric parameter, c, overlooked in earlier work, takes here its place for physical applications, and it is shown to be related to graphene's lattice spacing, ℓ. It is shown that all surfaces of constant negative curvature, K =-r-2, are unified, in the limit c/r→0, where they are locally applicable to the Beltrami pseudosphere. This, and c=ℓ, allow us (a) to have a phenomenological control on the reaching of the horizon; (b) to use spacetimes different from the Rindler spacetime for the Hawking phenomenon; and (c) to approach the generic surface of the family. An improved expression for the thermal LDOS is obtained. A nonthermal term for the total LDOS is found. It takes into account (i) the peculiarities of the graphene-based Rindler spacetime; (ii) the finiteness of a laboratory surface; and (iii) the optimal use of the Minkowski quantum vacuum, through the choice of this Minkowski-static boundary.

Numerical relativity beyond astrophysics.

PubMed

Garfinkle, David

2017-01-01

Though the main applications of computer simulations in relativity are to astrophysical systems such as black holes and neutron stars, nonetheless there are important applications of numerical methods to the investigation of general relativity as a fundamental theory of the nature of space and time. This paper gives an overview of some of these applications. In particular we cover (i) investigations of the properties of spacetime singularities such as those that occur in the interior of black holes and in big bang cosmology. (ii) investigations of critical behavior at the threshold of black hole formation in gravitational collapse. (iii) investigations inspired by string theory, in particular analogs of black holes in more than 4 spacetime dimensions and gravitational collapse in spacetimes with a negative cosmological constant.

Numerical relativity beyond astrophysics

NASA Astrophysics Data System (ADS)

Garfinkle, David

2017-01-01

Though the main applications of computer simulations in relativity are to astrophysical systems such as black holes and neutron stars, nonetheless there are important applications of numerical methods to the investigation of general relativity as a fundamental theory of the nature of space and time. This paper gives an overview of some of these applications. In particular we cover (i) investigations of the properties of spacetime singularities such as those that occur in the interior of black holes and in big bang cosmology. (ii) investigations of critical behavior at the threshold of black hole formation in gravitational collapse. (iii) investigations inspired by string theory, in particular analogs of black holes in more than 4 spacetime dimensions and gravitational collapse in spacetimes with a negative cosmological constant.

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, L.; Im, J.; DeGottardi, W.

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE PAGES

Fang, L.; Im, J.; DeGottardi, W.; ...

2016-10-12

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Spin-Orbit Torque from a Magnetic Heterostructure of High-Entropy Alloy

NASA Astrophysics Data System (ADS)

Chen, Tian-Yue; Chuang, Tsao-Chi; Huang, Ssu-Yen; Yen, Hung-Wei; Pai, Chi-Feng

2017-10-01

High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this work, we demonstrate current-induced spin-orbit torque (SOT) magnetization switching in a Ta-Nb-Hf-Zr-Ti HEA-based magnetic heterostructure with perpendicular magnetic anisotropy. The maximum dampinglike SOT efficiency from this particular HEA-based magnetic heterostructure is further determined to be |ζDLHEA | ≈0.033 by hysteresis-loop-shift measurements, while that for the Ta control sample is |ζDLTa | ≈0.04 . Our results indicate that HEA-based magnetic heterostructures can serve as an alternative group of potential candidates for SOT device applications due to the possibility of tuning buffer-layer properties with more than two constituent elements.

Application of Knowledge-Based Techniques to Tracking Function

DTIC Science & Technology

2006-09-01

38394041 42434445 46474849 505152 53545556 57585960 616263 646566 676869 707172 737475 7677 7879 8081 8283 8485 8687 8889 9091 9293 9495 969798 99100...Knowledge-based applications to adaptive space-time processing. Volume I: Summary”, AFRL-SN-TR-2001-146 Vol. I (of Vol. VI ), Final Technical Report, July...2001-146 Vol. IV (of Vol. VI ), Final Technical Report, July 2001. [53] C. Morgan, L. Moyer, “Knowledge-based applications to adaptive space-time

Application of hierarchical clustering method to classify of space-time rainfall patterns

NASA Astrophysics Data System (ADS)

Yu, Hwa-Lung; Chang, Tu-Je

2010-05-01

Understanding the local precipitation patterns is essential to the water resources management and flooding mitigation. The precipitation patterns can vary in space and time depending upon the factors from different spatial scales such as local topological changes and macroscopic atmospheric circulation. The spatiotemporal variation of precipitation in Taiwan is significant due to its complex terrain and its location at west pacific and subtropical area, where is the boundary between the pacific ocean and Asia continent with the complex interactions among the climatic processes. This study characterizes local-scale precipitation patterns by classifying the historical space-time precipitation records. We applied the hierarchical ascending clustering method to analyze the precipitation records from 1960 to 2008 at the six rainfall stations located in Lan-yang catchment at the northeast of the island. Our results identify the four primary space-time precipitation types which may result from distinct driving forces from the changes of atmospheric variables and topology at different space-time scales. This study also presents an important application of the statistical downscaling to combine large-scale upper-air circulation with local space-time precipitation patterns.

PbSe-Based Colloidal Core/Shell Heterostructures for Optoelectronic Applications

PubMed Central

Zaiats, Gary; Yanover, Diana; Vaxenburg, Roman; Tilchin, Jenya; Sashchiuk, Aldona; Lifshitz, Efrat

2014-01-01

Lead-based (IV–VI) colloidal quantum dots (QDs) are of widespread scientific and technological interest owing to their size-tunable band-gap energy in the near-infrared optical region. This article reviews the synthesis of PbSe-based heterostructures and their structural and optical investigations at various temperatures. The review focuses on the structures consisting of a PbSe core coated with a PbSexS1–x (0 ≤ x ≤ 1) or CdSe shell. The former-type shells were epitaxially grown on the PbSe core, while the latter-type shells were synthesized using partial cation-exchange. The influence of the QD composition and the ambient conditions, i.e., exposure to oxygen, on the QD optical properties, such as radiative lifetime, Stokes shift, and other temperature-dependent characteristics, was investigated. The study revealed unique properties of core/shell heterostructures of various compositions, which offer the opportunity of fine-tuning the QD electronic structure by changing their architecture. A theoretical model of the QD electronic band structure was developed and correlated with the results of the optical studies. The review also outlines the challenges related to potential applications of colloidal PbSe-based heterostructures. PMID:28788244

Computational Modeling of Photocatalysts for CO2 Conversion Applications

NASA Astrophysics Data System (ADS)

Tafen, De; Matranga, Christopher

2013-03-01

To make photocatalytic conversion approaches efficient, economically practical, and industrially scalable, catalysts capable of utilizing visible and near infrared photons need to be developed. Recently, a series of CdSe and PbS quantum dot-sensitized TiO2 heterostructures have been synthesized, characterized, and tested for reduction of CO2 under visible light. Following these experiments, we use density functional theory to model these heterostructured catalysts and investigate their CO2 catalytic activity. In particular, we study the nature of the heterostructure interface, charge transport/electron transfer, active sites and the electronic structures of these materials. The results will be presented and compared to experiments. The improvement of our understanding of the properties of these materials will aid not only the development of more robust, visible light active photocatalysts for carbon management applications, but also the development of quantum dot-sensitized semiconductor solar cells with high efficiencies in solar-to-electrical energy conversion.

Electromagnetic Field Enhancement on Axially Heterostructured NWs: The Role of the Heterojunctions

NASA Astrophysics Data System (ADS)

Pura, J. L.; Souto, J.; Periwal, P.; Baron, T.; Jiménez, J.

2018-05-01

Semiconductor nanowires are the building blocks of future nanoelectronic devices. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. We carried out experimental measurements through the micro-Raman spectroscopy of different group IV nanowires, both homogeneous Si nanowires and axially heterostructured SiGe/Si nanowires. These experimental measurements show an enhancement of the Raman signal in the vicinity of the heterojunction of SiGe/Si nanowires. The results are analysed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances, and the results are understood as a consequence of a finite change in the relative permittivity of the material at the SiGe/Si heterojunction. This effect opens a path to controlling interactions between light and matter at the nanoscale with direct applications in photonic nanodevices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Susarla, Sandhya; Kochat, Vidya; Kutana, Alex

Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo 1–xW xS 2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imagingmore » and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments demonstrate the possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.« less

Real-time Space-time Integration in GIScience and Geography

PubMed Central

Richardson, Douglas B.

2013-01-01

Space-time integration has long been the topic of study and speculation in geography. However, in recent years an entirely new form of space-time integration has become possible in GIS and GIScience: real-time space-time integration and interaction. While real-time spatiotemporal data is now being generated almost ubiquitously, and its applications in research and commerce are widespread and rapidly accelerating, the ability to continuously create and interact with fused space-time data in geography and GIScience is a recent phenomenon, made possible by the invention and development of real-time interactive (RTI) GPS/GIS technology and functionality in the late 1980s and early 1990s. This innovation has since functioned as a core change agent in geography, cartography, GIScience and many related fields, profoundly realigning traditional relationships and structures, expanding research horizons, and transforming the ways geographic data is now collected, mapped, modeled, and used, both in geography and in science and society more broadly. Real-time space-time interactive functionality remains today the underlying process generating the current explosion of fused spatiotemporal data, new geographic research initiatives, and myriad geospatial applications in governments, businesses, and society. This essay addresses briefly the development of these real-time space-time functions and capabilities; their impact on geography, cartography, and GIScience; and some implications for how discovery and change can occur in geography and GIScience, and how we might foster continued innovation in these fields. PMID:24587490

(2+1)-dimensional spacetimes containing closed timelike curves

NASA Astrophysics Data System (ADS)

Headrick, Matthew P.; Gott, J. Richard, III

1994-12-01

We investigate the global geometries of (2+1)-dimensional spacetimes as characterized by the transformations undergone by tangent spaces upon parallel transport around closed curves. We critically discuss the use of the term ``total energy-momentum'' as a label for such parallel-transport transformations, pointing out several problems with it. We then investigate parallel-transport transformations in the known (2+1)-dimensional spacetimes containing closed timelike curves (CTC's), and introduce a few new such spacetimes. Using the more specific concept of the holonomy of a closed curve, applicable in simply connected spacetimes, we emphasize that Gott's two-particle CTC-containing spacetime does not have a tachyonic geometry. Finally, we prove the following modified version of Kabat's conjecture: if a CTC is deformable to spacelike or null infinity while remaining a CTC, then its parallel-transport transformation cannot be a rotation; therefore its holonomy, if defined, cannot be a rotation other than through a multiple of 2π.

Exact geodesic distances in FLRW spacetimes

NASA Astrophysics Data System (ADS)

Cunningham, William J.; Rideout, David; Halverson, James; Krioukov, Dmitri

2017-11-01

Geodesics are used in a wide array of applications in cosmology and astrophysics. However, it is not a trivial task to efficiently calculate exact geodesic distances in an arbitrary spacetime. We show that in spatially flat (3 +1 )-dimensional Friedmann-Lemaître-Robertson-Walker (FLRW) spacetimes, it is possible to integrate the second-order geodesic differential equations, and derive a general method for finding both timelike and spacelike distances given initial-value or boundary-value constraints. In flat spacetimes with either dark energy or matter, whether dust, radiation, or a stiff fluid, we find an exact closed-form solution for geodesic distances. In spacetimes with a mixture of dark energy and matter, including spacetimes used to model our physical universe, there exists no closed-form solution, but we provide a fast numerical method to compute geodesics. A general method is also described for determining the geodesic connectedness of an FLRW manifold, provided only its scale factor.

Beyond Discrete Vacuum Spacetimes

NASA Astrophysics Data System (ADS)

McDonald, Jonathan; Miller, Warner

2008-04-01

In applications to pre-geometric models of quantum gravity, one expects matter to play an important role in the geometry of the spacetime. Such models often posit that the matter fields play a crucial role in the determination of the spacetime geometry. However, it is not well understood at a fundamental level how one couples matter into the Regge geometry. In order to better understand the nature of such theories that rely on Regge Calculus, we must first gain a better understanding of the role of matter in a lattice spacetime. We investigate consistent methods of incorporating matter into spacetime, and particularly focus on the role of spinors in Regge Calculus. Since spinors are fundamental to fermionic fields, this investigation is crucial in understanding fermionic coupling to discrete spacetime. Our focus is primarily on the geometric interpretation of the fields on the lattice geometry with a goal on understanding the dynamic coupling between the fields and the geometry.

Hypersurface-deformation algebroids and effective spacetime models

NASA Astrophysics Data System (ADS)

Bojowald, Martin; Büyükçam, Umut; Brahma, Suddhasattwa; D'Ambrosio, Fabio

2016-11-01

In canonical gravity, covariance is implemented by brackets of hypersurface-deformation generators forming a Lie algebroid. Lie-algebroid morphisms, therefore, allow one to relate different versions of the brackets that correspond to the same spacetime structure. An application to examples of modified brackets found mainly in models of loop quantum gravity can, in some cases, map the spacetime structure back to the classical Riemannian form after a field redefinition. For one type of quantum corrections (holonomies), signature change appears to be a generic feature of effective spacetime, and it is shown here to be a new quantum spacetime phenomenon which cannot be mapped to an equivalent classical structure. In low-curvature regimes, our constructions not only prove the existence of classical spacetime structures assumed elsewhere in models of loop quantum cosmology, they also show the existence of additional quantum corrections that have not always been included.

Pseudo-Newtonian Equations for Evolution of Particles and Fluids in Stationary Space-times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witzany, Vojtěch; Lämmerzahl, Claus, E-mail: vojtech.witzany@zarm.uni-bremen.de, E-mail: claus.laemmerzahl@zarm.uni-bremen.de

Pseudo-Newtonian potentials are a tool often used in theoretical astrophysics to capture some key features of a black hole space-time in a Newtonian framework. As a result, one can use Newtonian numerical codes, and Newtonian formalism, in general, in an effective description of important astrophysical processes such as accretion onto black holes. In this paper, we develop a general pseudo-Newtonian formalism, which pertains to the motion of particles, light, and fluids in stationary space-times. In return, we are able to assess the applicability of the pseudo-Newtonian scheme. The simplest and most elegant formulas are obtained in space-times without gravitomagnetic effects,more » such as the Schwarzschild rather than the Kerr space-time; the quantitative errors are smallest for motion with low binding energy. Included is a ready-to-use set of fluid equations in Schwarzschild space-time in Cartesian and radial coordinates.« less

Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

NASA Astrophysics Data System (ADS)

Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

2018-05-01

Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

Three-particle annihilation in a 2D heterostructure revealed through data-hypercubic photoresponse microscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gabor, Nathaniel M.

2017-05-01

Van de Waals (vdW) heterostructures - which consist of precisely assembled atomically thin electronic materials - exhibit unusual quantum behavior. These quantum materials-by-design are of fundamental interest in basic scientific research and hold tremendous potential in advanced technological applications. Problematically, the fundamental optoelectronic response in these heterostructures is difficult to access using the standard techniques within the traditions of materials science and condensed matter physics. In the standard approach, characterization is based on the measurement of a small amount of one-dimensional data, which is used to gain a precise picture of the material properties of the sample. However, these techniques are fundamentally lacking in describing the complex interdependency of experimental degrees of freedom in vdW heterostructures. In this talk, I will present our recent experiments that utilize a highly data-intensive approach to gain deep understanding of the infrared photoresponse in vdW heterostructure photodetectors. These measurements, which combine state-of-the-art data analytics and measurement design with fundamentally new device structures and experimental parameters, give a clear picture of electron-hole pair interactions at ultrafast time scales.

Construction of CuS/Au Heterostructure through a Simple Photoreduction Route for Enhanced Electrochemical Hydrogen Evolution and Photocatalysis

NASA Astrophysics Data System (ADS)

Basu, Mrinmoyee; Nazir, Roshan; Fageria, Pragati; Pande, Surojit

2016-10-01

An efficient Hydrogen evolution catalyst has been developed by decorating Au nanoparticle on the surface of CuS nanostructure following a green and environmental friendly approach. CuS nanostructure is synthesized through a simple wet-chemical route. CuS being a visible light photocatalyst is introduced to function as an efficient reducing agent. Photogenerated electron is used to reduce Au(III) on the surface of CuS to prepare CuS/Au heterostructure. The as-obtained heterostructure shows excellent performance in electrochemical H2 evolution reaction with promising durability in acidic condition, which could work as an efficient alternative for novel metals. The most efficient CuS-Au heterostructure can generate 10 mA/cm2 current density upon application of 0.179 V vs. RHE. CuS-Au heterostructure can also perform as an efficient photocatalyst for the degradation of organic pollutant. This dual nature of CuS and CuS/Au both in electrocatalysis and photocatalysis has been unveiled in this study.

Tunable two-dimensional interfacial coupling in molecular heterostructures

DOE PAGES

Xu, Beibei; Chakraborty, Himanshu; Yadav, Vivek K.; ...

2017-08-22

Two-dimensional van der Waals heterostructures are of considerable interest for the next generation nanoelectronics because of their unique interlayer coupling and optoelectronic properties. Here, we report a modified Langmuir–Blodgett method to organize twodimensional molecular charge transfer crystals into arbitrarily and vertically stacked heterostructures, consisting of bis(ethylenedithio)tetrathiafulvalene (BEDT–TTF)/C 60 and poly (3-dodecylthiophene-2,5-diyl) (P3DDT)/C 60 nanosheets. A strong and anisotropic interfacial coupling between the charge transfer pairs is demonstrated. The van der Waals heterostructures exhibit pressure dependent sensitivity with a high piezoresistance coefficient of -4.4 × 10 -6 Pa -1, and conductance and capacitance tunable by external stimuli (ferroelectric field and magneticmore » field). Density functional theory calculations confirm charge transfer between the n-orbitals of the S atoms in BEDT–TTF of the BEDT–TTF/C 60 layer and the π* orbitals of C atoms in C 60 of the P3DDT/C 60 layer contribute to the inter-complex CT. Thus, the two-dimensional molecular van der Waals heterostructures with tunable optical–electronic–magnetic coupling properties are promising for flexible electronic applications.« less

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2016-07-06

Here, the highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent xray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patternsmore » of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.« less

Construction of CuS/Au Heterostructure through a Simple Photoreduction Route for Enhanced Electrochemical Hydrogen Evolution and Photocatalysis

PubMed Central

Basu, Mrinmoyee; Nazir, Roshan; Fageria, Pragati; Pande, Surojit

2016-01-01

An efficient Hydrogen evolution catalyst has been developed by decorating Au nanoparticle on the surface of CuS nanostructure following a green and environmental friendly approach. CuS nanostructure is synthesized through a simple wet-chemical route. CuS being a visible light photocatalyst is introduced to function as an efficient reducing agent. Photogenerated electron is used to reduce Au(III) on the surface of CuS to prepare CuS/Au heterostructure. The as-obtained heterostructure shows excellent performance in electrochemical H2 evolution reaction with promising durability in acidic condition, which could work as an efficient alternative for novel metals. The most efficient CuS-Au heterostructure can generate 10 mA/cm2 current density upon application of 0.179 V vs. RHE. CuS-Au heterostructure can also perform as an efficient photocatalyst for the degradation of organic pollutant. This dual nature of CuS and CuS/Au both in electrocatalysis and photocatalysis has been unveiled in this study. PMID:27703212

Solvent mediated hybrid 2D materials: black phosphorus - graphene heterostructured building blocks assembled for sodium ion batteries.

PubMed

Li, Mengya; Muralidharan, Nitin; Moyer, Kathleen; Pint, Cary L

2018-06-07

Here we demonstrate the broad capability to exploit interactions at different length scales in 2D materials to prepare macroscopic functional materials containing hybrid black phosphorus/graphene (BP/G) heterostructured building blocks. First, heterostructured 2D building blocks are self-assembled during co-exfoliation in the solution phase based on electrostatic attraction of different 2D materials. Second, electrophoretic deposition is used as a tool to assemble these building blocks into macroscopic films containing these self-assembled 2D heterostructures. Characterization of deposits formed using this technique elucidates the presence of stacked and sandwiched 2D heterostructures, and zeta potential measurements confirm the mechanistic interactions driving this assembly. Building on the exceptional sodium alloying capacity of BP, these materials were demonstrated as superior binder-free and additive-free anodes for sodium batteries with specific discharge capacity of 2365 mA h gP-1 and long stable cycling duration. This study demonstrates how controllable co-processing of 2D materials can enable material control for stacking and building block assembly relevant to broad future applications of 2D materials.

Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

NASA Astrophysics Data System (ADS)

Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

2017-03-01

The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures.

PubMed

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-04-14

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with Species, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene "painting" on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

PubMed Central

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-01-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene “painting” on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis. PMID:24728289

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

NASA Astrophysics Data System (ADS)

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-04-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

Enhancement of SOFC Cathode Electrochemical Performance Using Multi-Phase Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan, Dane

2015-09-30

This work explored the use of oxide heterostructures for enhancing the catalytic and degradation properties of solid oxide fuel cell (SOFC) cathode electrodes. We focused on heterostructures of Ruddlesden-Popper and perovskite phases. Building on previous work showing enhancement of the Ruddlesden-Popper (La,Sr) 2CoO 4 / perovskite (La,Sr)CoO 3 heterostructure compared to pure (La,Sr)CoO 3 we explored the application of related heterostructures of Ruddlesden-Popper phases on perovskite (La,Sr)(Co,Fe)O 3. Our approaches included thin-film electrodes, physical and electrochemical characterization, elementary reaction kinetics modeling, and ab initio simulations. We demonstrated that Sr segregation to surfaces is likely playing a critical role in themore » performance of (La,Sr)CoO 3 and (La,Sr)(Co,Fe)O 3 and that modification of this Sr segregation may be the mechanism by which Ruddlesden-Popper coatings enhance performances. We determined that (La,Sr)(Co,Fe)O 3 could be enhanced in thin films by about 10× by forming a heterostructure simultaneously with (La,Sr) 2CoO 4 and (La,Sr)CoO 3. We hope that future work will develop this heterostructure for use as a bulk porous electrode.« less

Terrain Dynamics Analysis Using Space-Time Domain Hypersurfaces and Gradient Trajectories Derived From Time Series of 3D Point Clouds

DTIC Science & Technology

2015-08-01

optimized space-time interpolation method. Tangible geospatial modeling system was further developed to support the analysis of changing elevation surfaces...Evolution Mapped by Terrestrial Laser Scanning, talk, AGU Fall 2012 *Hardin E, Mitas L, Mitasova H., Simulation of Wind -Blown Sand for...Geomorphological Applications: A Smoothed Particle Hydrodynamics Approach, GSA 2012 *Russ, E. Mitasova, H., Time series and space-time cube analyses on

On the Application of Time-Reversed Space-Time Block Code to Aeronautical Telemetry

DTIC Science & Technology

2014-06-01

Keying (SOQPSK), bit error rate (BER), Orthogonal Frequency Division Multiplexing ( OFDM ), Generalized time-reversed space-time block codes (GTR-STBC) 16...Alamouti code [4]) is optimum [2]. Although OFDM is generally applied on a per subcarrier basis in frequency selective fading, it is not a viable...Calderbank, “Finite-length MIMO decision feedback equal- ization for space-time block-coded signals over multipath-fading channels,” IEEE Transac- tions on

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

PubMed

Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg

2017-08-09

The key appeal of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene for electronic applications certainly lies in their atomically thin nature that offers opportunities for devices beyond conventional transistors. It is also this property that makes them naturally suited for a type of integration that is not possible with any three-dimensional (3D) material, that is, forming heterostructures by stacking dissimilar 2D materials together. Recently, a number of research groups have reported on the formation of atomically sharp p/n-junctions in various 2D heterostructures that show strong diode-type rectification. In this article, we will show that truly vertical heterostructures do exhibit much smaller rectification ratios and that the reported results on atomically sharp p/n-junctions can be readily understood within the framework of the gate and drain voltage response of Schottky barriers that are involved in the lateral transport.

The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures

NASA Astrophysics Data System (ADS)

Pokatilov, E. P.; Nika, D. L.; Askerov, A. S.; Zincenco, N. D.; Balandin, A. A.

2007-12-01

nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of the size-quantized excited electron subbands and the Fermi energy becomes comparable to the optical phonon energy. The latter leads to the oscillatory dependence of the electron mobility on the thickness of the heterostructure conduction channel layer. This effect is observable at room temperature and over a wide range of the carrier densities. The developed formalism and calculation procedure are readily applicable to other material systems. The described effect can be used for fine-tuning the confined electron and phonon states in the nanoscale heterostructures in order to achieve performance enhancement of the nanoscale electronic and optoelectronic devices.

Fabrication and assembly of two-dimensional TiO2/WO3·H2O heterostructures with type II band alignment for enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Xu, Tao; Wang, Yun; Zhou, Xiaofang; Zheng, Xiaoli; Xu, Qun; Chen, Zhimin; Ren, Yumei; Yan, Bo

2017-05-01

The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO2/WO3·H2O heterostructures with the assistance of supercritical CO2 (SC CO2) in this work. The as-fabricated heterostructures possess high photocatalytic activity for the degradation of methyl orange(MO) and high photocurrent response under simulated solar light (AM 1.5). For the TiO2/WO3·H2O heterostructures, the MO solution could be degraded by 95.5% in 150 min, and the photocurrent density reaches to 6.5 μA cm-2, exhibiting a significant enhancement compared with pure TiO2 and WO3·H2O nanosheets.

Electronic structure robustness and design rules for 2D colloidal heterostructures

NASA Astrophysics Data System (ADS)

Chu, Audrey; Livache, Clément; Ithurria, Sandrine; Lhuillier, Emmanuel

2018-01-01

Among the colloidal quantum dots, 2D nanoplatelets present exceptionally narrow optical features. Rationalizing the design of heterostructures of these objects is of utmost interest; however, very little work has been focused on the investigation of their electronic properties. This work is organized into two main parts. In the first part, we use 1D solving of the Schrödinger equation to extract the effective masses for nanoplatelets (NPLs) of CdSe, CdS, and CdTe and the valence band offset for NPL core/shell of CdSe/CdS. In the second part, using the determined parameters, we quantize how the spectra of the CdSe/CdS heterostructure get affected by (i) the application of an electric field and (ii) by the presence of a dull interface. We also propose design strategies to make the heterostructure even more robust.

Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors

PubMed Central

Robin, A.; Lhuillier, E.; Xu, X. Z.; Ithurria, S.; Aubin, H.; Ouerghi, A.; Dubertret, B.

2016-01-01

Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1–1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties. PMID:27143413

Rare-earth nickelates RNiO3: thin films and heterostructures

NASA Astrophysics Data System (ADS)

Catalano, S.; Gibert, M.; Fowlie, J.; Íñiguez, J.; Triscone, J.-M.; Kreisel, J.

2018-04-01

This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

Rare-earth nickelates RNiO3: thin films and heterostructures.

PubMed

Catalano, S; Gibert, M; Fowlie, J; Íñiguez, J; Triscone, J-M; Kreisel, J

2018-04-01

This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO 3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron-lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg

2016-02-14

Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat currentmore » along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.« less

Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

PubMed

Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

2014-12-19

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-10 K. The low-temperature data follow a logarithmic law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Wei, Lan-ying; Lian, Chao; Meng, Sheng

2017-05-01

First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications.

PubMed

Akkari, Marwa; Aranda, Pilar; Ben Haj Amara, Abdessalem; Ruiz-Hitzky, Eduardo

2016-01-01

In this study, ZnO/SiO 2 -clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica-organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP) dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica-organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP) homogeneously assembled to the clay-SiO 2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO 2 -clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite-silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM). The efficiency of these new porous ZnO/SiO 2 -clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants.

Synthesis, properties and applications of 2D non-graphene materials.

PubMed

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-07-24

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

On the structure and applications of the Bondi-Metzner-Sachs group

NASA Astrophysics Data System (ADS)

Alessio, Francesco; Esposito, Giampiero

This work is a pedagogical review dedicated to a modern description of the Bondi-Metzner-Sachs (BMS) group. Minkowski space-time has an interesting and useful group of isometries, but, for a generic space-time, the isometry group is simply the identity and hence provides no significant informations. Yet symmetry groups have important role to play in physics; in particular, the Poincaré group describing the isometries of Minkowski space-time plays a role in the standard definitions of energy-momentum and angular-momentum. For this reason alone it would seem to be important to look for a generalization of the concept of isometry group that can apply in a useful way to suitable curved space-times. The curved space-times that will be taken into account are the ones that suitably approach, at infinity, Minkowski space-time. In particular we will focus on asymptotically flat space-times. In this work, the concept of asymptotic symmetry group of those space-times will be studied. In the first two sections we derive the asymptotic group following the classical approach which was basically developed by Bondi, van den Burg, Metzner and Sachs. This is essentially the group of transformations between coordinate systems of a certain type in asymptotically flat space-times. In the third section the conformal method and the notion of “asymptotic simplicity” are introduced, following mainly the works of Penrose. This section prepares us for another derivation of the BMS group which will involve the conformal structure, and is thus more geometrical and fundamental. In the subsequent sections we discuss the properties of the BMS group, e.g. its algebra and the possibility to obtain as its subgroup the Poincaré group, as we may expect. The paper ends with a review of the BMS invariance properties of classical gravitational scattering discovered by Strominger, that are finding application to black hole physics and quantum gravity in the literature.

Toward a holographic theory for general spacetimes

NASA Astrophysics Data System (ADS)

Nomura, Yasunori; Salzetta, Nico; Sanches, Fabio; Weinberg, Sean J.

2017-04-01

We study a holographic theory of general spacetimes that does not rely on the existence of asymptotic regions. This theory is to be formulated in a holographic space. When a semiclassical description is applicable, the holographic space is assumed to be a holographic screen: a codimension-1 surface that is capable of encoding states of the gravitational spacetime. Our analysis is guided by conjectured relationships between gravitational spacetime and quantum entanglement in the holographic description. To understand basic features of this picture, we catalog predictions for the holographic entanglement structure of cosmological spacetimes. We find that qualitative features of holographic entanglement entropies for such spacetimes differ from those in AdS/CFT but that the former reduce to the latter in the appropriate limit. The Hilbert space of the theory is analyzed, and two plausible structures are found: a direct-sum and "spacetime-equals-entanglement" structure. The former preserves a naive relationship between linear operators and observable quantities, while the latter respects a more direct connection between holographic entanglement and spacetime. We also discuss the issue of selecting a state in quantum gravity, in particular how the state of the multiverse may be selected in the landscape.

Cu2O-directed in situ growth of Au nanoparticles inside HKUST-1 nanocages.

PubMed

Liu, Yongxin; Liu, Ting; Tian, Long; Zhang, Linlin; Yao, Lili; Tan, Taixing; Xu, Jin; Han, Xiaohui; Liu, Dan; Wang, Cheng

2016-12-07

Controllable integration of metal nanoparticles (MNPs) and metal-organic frameworks (MOFs) is attracting considerable attention as the obtained composite materials always show synergistic effects in applications of catalysis, delivery, as well as sensing. Herein, a Cu 2 O-directed in situ growth strategy was developed to integrate Au nanoparticles and HKUST-1. In this strategy, Cu 2 O@HKUST-1 core-shell heterostructures, HKUST-1 nanocages, Cu 2 O@Au@HKUST-1 sandwich core-shell heterostructures and Au@HKUST-1 balls-in-cage heterostructures were successfully synthesized. Cu 2 O@HKUST-1 core-shell heterostructures were synthesized by soaking Cu 2 O nanocrystals in benzene-1,3,5-tricarboxylic acid solution. The well-defined Cu 2 O@HKUST-1 core-shell heterostructures were demonstrated to be dominated by the ratio of Cu 2+ cations to btc 3- ligands in solution during the period of HKUST-1 formation. Cu 2 O@Au@HKUST-1 sandwich core-shell or Au@HKUST-1 balls-in-cage heterostructures were obtained by impregnating HAuCl 4 into Cu 2 O@HKUST-1 core-shell heterostructures. Due to the porosity of HKUST-1 and reducibility of Cu 2 O, HAuCl 4 could pass through the HKUST-1 shell and be reduced by the Cu 2 O core in situ forming Au nanoparticles. Finally, CO oxidation reaction at high temperatures was carried out to assess the catalytic functionality of the obtained composite heterostructures. This strategy can circumvent some drawbacks of the existing approaches for integrating MNPs and MOFs, such as nonselective deposition of MNPs at the outer surface of the MOF matrices, extreme treatment conditions and additional surface modifications.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems

PubMed Central

Dong, Rui; Kuljanishvili, Irma

2017-01-01

Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures. PMID:29075580

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

NASA Astrophysics Data System (ADS)

Cui, Jizhai; Liang, Cheng-Yen; Paisley, Elizabeth A.; Sepulveda, Abdon; Ihlefeld, Jon F.; Carman, Gregory P.; Lynch, Christopher S.

2015-08-01

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the "onion" state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

2D Vertical Heterostructures for Novel Tunneling Device Applications

DTIC Science & Technology

2017-03-01

controlled by a combination of the drain-source voltage bias (VDS) and the top and bottom gate biases (VTG and VBG, respectively). The drain-source...properties that can potentially overcome some of the limitations of epitaxial 3D semiconductor heterostructures. Simulations of 2D...interlayer barrier, such as h-BN, a high-k dielectric material, or a van der Waal gap. Under appropriate bias conditions, charge carriers can tunnel

Visible-light-driven activity and synergistic mechanism of TiO2@g-C3N4 heterostructured photocatalysts fabricated through a facile and green procedure for various toxic pollutants removal.

PubMed

Xiao, Gang; Xu, Shengnan; Li, Peifeng; Su, Haijia

2018-08-03

Heterostructured photocatalysts based on g-C 3 N 4 and TiO 2 represent a promising kind of photocatalyst in environmental fields, but the synthesis methods are always complex and not green. In the present paper, a facile and green one-step calcination procedure at lower temperature (450 °C) with the assistance of water is developed to synthesize a visible-light-active TiO 2 @g-C 3 N 4 heterostructured photocatalyst, which shows higher visible-light-driven activity (k = 0.014 min -1 ) than pure g-C 3 N 4 (k = 0.0036 min -1 ) and TiO 2 (k = 0.0067 min -1 ) for methyl orange degradation. Excellent performance (over 90% conversion) was also observed for the removal of rhodamine B, phenol, and Cr(VI) under visible light. The heterostructured photocatalyst showed favorable reusability, preserving 86% of its activity after five successive cycles. A mechanism study demonstrates that the enhanced photocatalytic activity results from the efficient separation of the photo-generated charge carriers through the intimate interface between the two semiconductors based on their appropriate band structures and light-induced mechanism. The heterostructured photocatalyst will certainly find wide applications in the treatment of various toxic pollutants in wastewater using abundant solar energy. Furthermore, this facile and green procedure and the proposed synergistic mechanism will provide guidelines in designing other g-C 3 N 4 based organic-inorganic composite photocatalysts for various applications.

Mapping superintegrable quantum mechanics to resonant spacetimes

NASA Astrophysics Data System (ADS)

Evnin, Oleg; Demirchian, Hovhannes; Nersessian, Armen

2018-01-01

We describe a procedure naturally associating relativistic Klein-Gordon equations in static curved spacetimes to nonrelativistic quantum motion on curved spaces in the presence of a potential. Our procedure is particularly attractive in application to (typically, superintegrable) problems whose energy spectrum is given by a quadratic function of the energy level number, since for such systems the spacetimes one obtains possess evenly spaced, resonant spectra of frequencies for scalar fields of a certain mass. This construction emerges as a generalization of the previously studied correspondence between the Higgs oscillator and anti-de Sitter spacetime, which has been useful for both understanding weakly nonlinear dynamics in anti-de Sitter spacetime and algebras of conserved quantities of the Higgs oscillator. Our conversion procedure ("Klein-Gordonization") reduces to a nonlinear elliptic equation closely reminiscent of the one emerging in relation to the celebrated Yamabe problem of differential geometry. As an illustration, we explicitly demonstrate how to apply this procedure to superintegrable Rosochatius systems, resulting in a large family of spacetimes with resonant spectra for massless wave equations.

New ultrathin film heterostructure for low-e application by sputtering technique: a theoretical and experimental study

NASA Astrophysics Data System (ADS)

Ruíz-Robles, M. A.; Abundiz-Cisneros, N.; Bender-Pérez, C. E.; Gutiérrez-Lazos, C. D.; Fundora-Cruz, A.; Solís-Pomar, F.; Pérez-Tijerina, E.

2018-03-01

The design and optical characterization by UV–vis transmittance of ultrathin low-emissivity (low-e) windows by reactive sputtering are reported. Two heterostructures on a glass substrate were considered for the low-e windows. The first heterostructure is Si3N4/TiO2/ZnO/Ag/SnO2/Si3N4 and the second is Si3N4/Ag/Si3N4. The transmittance and reflectance of these heterostructures were simulated to determine the required thickness of each layer. The first heterostructure exhibited maximum transmittance of 85% at 550 nm, slightly higher than the one determined by simulation and less than 50% transmittance in the near-infrared region (900 nm). The second heterostructure exhibited transmittance greater than 86% at 550 nm and <50% transmittance in the near-infrared region. In addition, we found that the bandwidth and maximum position of the transmittance depend on the Si3N4 layer thickness. Specifically, the thickness of the first Si3N4 layer allows the modulation of the transmittance bandwidth and the thickness of the second Si3N4 layer allows the modulation of the maximum position. The low-e windows were protected by the deposition of an ultrathin film of NiCr alloy (Ni 80%, Cr 20%) that preserved the optical characteristics and decreased the maximum of the transmittance only by 3%.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.

PubMed

Hong, Young Joon; Kim, Yong-Jin; Jeon, Jong-Myeong; Kim, Miyoung; Choi, Jun Hee; Baik, Chan Wook; Kim, Sun Il; Park, Sung Soo; Kim, Jong Min; Yi, Gyu-Chul

2011-05-20

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.

Hierarchical CuInS2-based heterostructure: Application for photocathodic bioanalysis of sarcosine.

PubMed

Jiang, Xin-Yuan; Zhang, Ling; Liu, Yi-Li; Yu, Xiao-Dong; Liang, Yan-Yu; Qu, Peng; Zhao, Wei-Wei; Xu, Jing-Juan; Chen, Hong-Yuan

2018-06-01

In this study, on the basis of hierarchical CuInS 2 -based heterostructure, a novel cathodic photoelectrochemical (PEC) enzymatic bioanalysis of the sarcosine detection was reported. Specifically, heterostructured CuInS 2 /NiO/ITO photocathode was prepared and sarcosine oxidases (SOx) were integrated for the construction of the enzymatic biosensor. In the bioanalysis, the O 2 -dependent suppression of the cathodic photocurrent can be observed due to the competition between the as-fabricated O 2 -sensitive photocathode and the SOx-catalytic event toward O 2 reduction. Based on the sarcosine-controlled O 2 concentration, a novel photocathodic enzymatic biosensor could be realized for the sensitive and specific sarcosine detection. This work manifested the great potential of CuInS 2 -based heterostructure as a novel platform for future PEC bioanalytical development and also a PEC method for sarcosine detection, which could be easily extended to numerous other enzymatic systems and to our knowledge has not been reported. This work is expected to stimulate more interest in the design and implementation of numerous CuInS 2 -based heterostructured photocathodic enzymatic sensing. Copyright © 2018 Elsevier B.V. All rights reserved.

Voltage control of magnetism in NiZn ferrite/mica/PMNPT heterostructure with giant tunability and narrow linewidth

NASA Astrophysics Data System (ADS)

Wang, Xinjun; Chen, Yunpeng; Chen, Huaihao; Gao, Yuan; He, Yifan; Li, Menghui; Lin, Hwaider; Sun, Neville; Sun, Nian

2018-05-01

Recently, large magnetoelectric coupling of a spinel/piezoelectric heterostructure has been reported. However, the linewidth of the spinel is very large due to lattice mismatch when ferrite is directly deposited on piezoelectric substrates. This indicates a large magnetic loss, which impedes the spinel/piezoelectric heterostructure from useful device applications. Mica is a well-known 2D material, which can be split manually layer by layer without the substrate clamping effect. In this report, NiZn ferrite was deposited on a mica substrate by a spin-spray deposition technique. Spin-spray deposition is a wet chemical synthesis technique involving several chemical reactions for generating high-quality crystalline spinel ferrite films with various compositions directly from an aqueous solution. The thickness of ferrite is 2 μm, and the linewidth of the ferromagnetic resonance (FMR) is 115 Oe which is suitable for RF/microwave devices. The large FMR field tuning of 605 Oe was observed in NiZn ferrite/mica/PMN-PT heterostructures with minimal substrate clamping effect by reducing the thickness of the mica substrate. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for flexible RF magnetic devices.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com; Chaudhuri, Arka

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, whichmore » demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.« less

Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution

DOE PAGES

Susarla, Sandhya; Kochat, Vidya; Kutana, Alex; ...

2017-08-15

Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo 1–xW xS 2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imagingmore » and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments demonstrate the possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.« less

Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

PubMed

Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

2013-06-07

Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

Challenges and opportunities of ZnO-related single crystalline heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozuka, Y.; Tsukazaki, A.; PRESTO, Japan Science and Technology Agency

2014-03-15

Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg{sub x}Zn{sub 1-x}O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such asmore » a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg{sub x}Zn{sub 1-x}O as intrinsic as possible has opened the possibilities of making p-type Mg{sub x}Zn{sub 1-x}O through NH{sub 3} doping method. For the latter, conducting and transparent polymer films spin-coated on Mg{sub x}Zn{sub 1-x}O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg{sub x}Zn{sub 1-x}O/ZnO interfaces are promising candidate for quantum devices because of high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.« less

Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

NASA Astrophysics Data System (ADS)

Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

2016-05-01

The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. Electronic supplementary information (ESI) available: XPS spectra, Raman spectra, sheet resistance and transmittance of graphene films with different numbers of layers and different ozone treatment times, doping effect of MoO3 on graphene and GO/G electrodes, performance of green OLEDs with different graphene anodes, a movie showing the flexibility of device. See DOI: 10.1039/c6nr01649a

Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

PubMed

Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

2011-01-11

The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures

NASA Astrophysics Data System (ADS)

McManus, Daryl; Vranic, Sandra; Withers, Freddie; Sanchez-Romaguera, Veronica; Macucci, Massimo; Yang, Huafeng; Sorrentino, Roberto; Parvez, Khaled; Son, Seok-Kyun; Iannaccone, Giuseppe; Kostarelos, Kostas; Fiori, Gianluca; Casiraghi, Cinzia

2017-05-01

Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications.

Franckeite as a naturally occurring van der Waals heterostructure

PubMed Central

Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

2017-01-01

The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors. PMID:28194037

Observation of long-lived interlayer excitons in monolayer MoSe 2–WSe 2 heterostructures

DOE PAGES

Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M.; ...

2015-02-24

Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in both device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and holes localized in individual monolayers, that is, interlayer excitons. Here, we report the observation of interlayer excitons in monolayer MoSe 2–WSe 2 heterostructures by photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity are highly tunable by an applied vertical gate voltage. Moreover, we measure an interlayermore » exciton lifetime of ~1.8 ns, an order of magnitude longer than intralayer excitons in monolayers. Ultimately, our work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of interlayer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.« less

Bottle-brush-shaped heterostructures of NiO-ZnO nanowires: growth study and sensing properties

NASA Astrophysics Data System (ADS)

Baratto, C.; Kumar, R.; Comini, E.; Ferroni, M.; Campanini, M.

2017-11-01

We present here heterostructured ZnO-NiO nanowires (NWs), constituted by a core of single crystalline ZnO NWs, covered by poly-crystalline NiO nanorods (NRs). The bottle-brush shape was investigated by scanning electron microscopy and transmission electron microscope, confirming that a columnar growth of NiO occurred over the ZnO core, with a preferred orientation of NiO over ZnO NWs. The heterostructured devices are proposed for gas sensing application. Bare ZnO NWs and heterostructured sensors with two different thicknesses of NiO poly-crystalline NRs were analysed for acetone, ethanol, NO2 and H2 detection. All sensors maintained n-type sensing mechanism, with improved sensing performance for lower thickness of NiO, due to high catalytic activity of NiO. The sensing dynamic is also strongly modified by the presence of heterojunction of NiO/ZnO, with a reduction of response and recovery times towards ethanol and acetone at 400 °C.

Rashba effect and enriched spin-valley coupling in Ga X /M X2 (M = Mo, W; X = S, Se, Te) heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Qingyun; Schwingenschlögl, Udo

2018-04-01

Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Arimoto, Keisuke; Nakazawa, Hiroki; Mitsui, Shohei; Utsuyama, Naoto; Yamanaka, Junji; Hara, Kosuke O.; Usami, Noritaka; Nakagawa, Kiyokazu

2017-11-01

A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface morphology and microstructural aspects of strained Si/relaxed SiGe/Si(110) heterostructures grown by solid-source (SS) molecular beam epitaxy (MBE). It was revealed that SSMBE provides a way to grow strained Si/relaxed SiGe heterostructures with smooth surfaces. In addition, it was found that the strain in the SiGe layer of the SSMBE-grown sample is highly anisotropic whereas that of the GSMBE-grown sample is almost biaxially relaxed. Along with the surface morphology, the symmetry in degree of strain relaxation has implications for the electrical property. Results of a calculation shows that anisotropic strain is preferable for device application since it confines holes solely in the strained Si layer where hole mobility is enhanced.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

PubMed Central

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Jizhai; Liang, Cheng-Yen; Sepulveda, Abdon

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroicmore » devices.« less

Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

NASA Astrophysics Data System (ADS)

Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

2017-02-01

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage ( I- V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I- V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

Spin-gapless and half-metallic ferromagnetism in potassium and calcium δ-doped GaN digital magnetic heterostructures for possible spintronic applications: insights from first principles

NASA Astrophysics Data System (ADS)

Du, Jiangtao; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Feng, Liefeng

2017-04-01

The reports previously issued predominantly paid attention to the d-block magnetic elements δ-doped digital magnetic materials. In this work, GaN δ-doped with non-magnetic main group s-block elements K and Ca as digital magnetic heterostructures were purposed and explored theoretically. We found that K- and Ca-embedded GaN digital alloys exhibit spin-gapless and half-metallic ferromagnetic characteristics, respectively. All compounds obey the Slater-Pauling rule with diverse electronic and magnetic properties. For these digital ferromagnetic heterostructures, spin polarization occurs in nitrogen within a confined space around the δ-doped layer, demonstrating a hole-mediated two-dimensional magnetic phenomenon.

Gravitational Radiation with a Positive Cosmological Constant

NASA Astrophysics Data System (ADS)

Bonga, Beatrice

Gravitational radiation is well-understood in spacetimes that are asymptotically flat. However, our Universe is currently expanding at an accelerated rate, which is best described by including a positive cosmological constant, Lambda, in Einstein's equations. Consequently, no matter how far one recedes from sources generating gravitational waves, spacetime curvature never dies and is not asymptotically flat. This dissertation provides first steps to incorporate Lambda in the study of gravitational radiation by analyzing linearized gravitational waves on a de Sitter background. Since the asymptotic structure of de Sitter is very different from that of Minkowski spacetime, many conceptual and technical difficulties arise. The limit Lambda → 0 can be discontinuous: Although energy carried by gravitational waves is always positive in Minkowski spacetime, it can be arbitrarily negative in de Sitter spacetime. Additionally, many of the standard techniques, including 1/r expansions, are no longer applicable. We generalize Einstein's celebrated quadrupole formula describing the power radiated on a flat background to de Sitter spacetime. Even a tiny Lambda brings in qualitatively new features such as contributions from pressure quadrupole moments. Nonetheless, corrections induced by Lambda are O(√Lambda tc) with tc the characteristic time scale of the source and are negligible for current gravitational wave observatories. We demonstrate this explicitly for a binary system in a circular orbit. Radiative modes are encoded in the transverse-traceless part of the spatial components of a gravitational perturbation. When Lambda = 0, one typically extracts these modes in the wave zone by projecting the gravitational perturbation onto the two-sphere orthogonal to the radial direction. We show that this method for waves emitted by spatially compact sources on Minkowski spacetime generically does not yield the transverse-traceless modes; not even infinitely far away. However, the difference between the transverse-traceless and projected modes is non-dynamical and disappears from all physical observables. When one is interested in 'Coulombic' information not captured by the radiative modes, the projection method does not suffice. This is, for example, important for angular momentum carried by gravitational waves. This result relies on Bondi-type expansions for asymptotically flat spacetimes. Therefore, the projection method is not applicable to de Sitter spacetimes.

Co3O4-x-Carbon@Fe2-yCoyO3 Heterostructural Hollow Polyhedrons for the Oxygen Evolution Reaction.

PubMed

Xu, Wangwang; Xie, Weiwei; Wang, Ying

2017-08-30

Hollow heterostructured nanomaterials have received tremendous interest in new-generation electrocatalyst applications. However, the design and fabrication of such materials remain a significant challenge. In this work, we present Co 3 O 4-x -carbon@Fe 2-y Co y O 3 heterostructural hollow polyhedrons that have been fabricated by facile thermal treatment followed by solution-phase growth for application as efficient oxygen evolution reaction (OER) electrocatalysts. Starting from a single ZIF-67 hollow polyhedron, a novel complex structured composite material constructed from Co 3 O 4-x nanocrystallite-embedded carbon matrix embedded with Fe 2-y Co y O 3 nanowires was successfully prepared. The Co 3 O 4-x nanocrystallite with oxygen vacancies provides both heterogeneous nucleation sites and growth platform for Fe 2-y Co y O 3 nanowires. The resultant heterostructure combines the advantages of Fe 2-y Co y O 3 nanowires with the large surface area and surface defects of Co 3 O 4-x nanocrystallite, resulting in improved electrocatalytic activity and electrical conductivity. As a result, such novel heterostructured OER electrocatalysts exhibit much lower onset potential (1.52 V) and higher current density (70 mA/cm 2 at 1.7 V) than Co 3 O 4-x -carbon hollow polyhedrons (onset 1.55 V, 35 mA/cm 2 at 1.7 V) and pure Co 3 O 4 hollow polyhedrons (onset 1.62 V, 5 mA/cm 2 at 1.7 V). Furthermore, the design and synthesis of metal-organic framework (MOF)-derived nanomaterials in this work offer new opportunities for developing novel and efficient electrocatalysts in electrochemical devices.

Two-step growth of two-dimensional WSe 2/MoSe 2 heterostructures

DOE PAGES

Gong, Yongji; Lei, Sidong; Lou, Jun; ...

2015-08-03

Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe 2 was synthesized first and followed by an epitaxial growth of WSe 2 on the edge and on the top surface of MoSe 2. Compared to previously reported one-stepmore » growth methods, this two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe 2/MoSe 2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe 2/WSe 2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe 2/MoSe 2 bilayer and the exposed MoSe 2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.« less

Morphological control of heterostructured nanowires synthesized by sol-flame method

PubMed Central

2013-01-01

Heterostructured nanowires, such as core/shell nanowires and nanoparticle-decorated nanowires, are versatile building blocks for a wide range of applications because they integrate dissimilar materials at the nanometer scale to achieve unique functionalities. The sol-flame method is a new, rapid, low-cost, versatile, and scalable method for the synthesis of heterostructured nanowires, in which arrays of nanowires are decorated with other materials in the form of shells or chains of nanoparticles. In a typical sol-flame synthesis, nanowires are dip-coated with a solution containing precursors of the materials to be decorated, then dried in air, and subsequently heated in the post-flame region of a flame at high temperature (over 900°C) for only a few seconds. Here, we report the effects of the precursor solution on the final morphology of the heterostructured nanowire using Co3O4 decorated CuO nanowires as a model system. When a volatile cobalt salt precursor is used with sufficient residual solvent, both solvent and cobalt precursor evaporate during the flame annealing step, leading to the formation of Co3O4 nanoparticle chains by a gas-solid transition. The length of the nanoparticle chains is mainly controlled by the temperature of combustion of the solvent. On the other hand, when a non-volatile cobalt salt precursor is used, only the solvent evaporates and the cobalt salt is converted to nanoparticles by a liquid–solid transition, forming a conformal Co3O4 shell. This study facilitates the use of the sol-flame method for synthesizing heterostructured nanowires with controlled morphologies to satisfy the needs of diverse applications. PMID:23924299

Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

PubMed

Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

2018-01-10

The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerner, Ryan; Mann, R.B.

We investigate quantum tunnelling methods for calculating black hole temperature, specifically the null-geodesic method of Parikh and Wilczek and the Hamilton-Jacobi Ansatz method of Angheben et al. We consider application of these methods to a broad class of spacetimes with event horizons, including Rindler and nonstatic spacetimes such as Kerr-Newman and Taub-NUT. We obtain a general form for the temperature of Taub-NUT-AdS black holes that is commensurate with other methods. We examine the limitations of these methods for extremal black holes, taking the extremal Reissner-Nordstrom spacetime as a case in point.

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

PubMed

Zhang, Zhaofu; Qian, Qingkai; Li, Baikui; Chen, Kevin J

2018-05-23

Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D material can easily be impacted by the substrate environment. In this work, the structural, electronic, and optical properties of the 2D/3D heterostructure of monolayer MoS 2 on wurtzite GaN surface without and with nitridation interfacial layer are systematically investigated by first-principles calculation and experimental analysis. The nitridation interfacial layer can be introduced into the 2D/3D heterostructure by remote N 2 plasma treatment to GaN sample surface prior to stacking monolayer MoS 2 on top. The calculation results reveal that the 2D/3D integrated heterostructure is energetically favorable with a negative formation energy. Both interfaces demonstrate indirect band gap, which is a benefit for longer lifetime of the photoexcited carriers. Meanwhile, the conduction band edge and valence band edge of the MoS 2 side increases after nitridation treatment. The modification to band alignment is then verified by X-ray photoelectron spectroscopy measurement on MoS 2 /GaN heterostructures constructed by a modified wet-transfer technique, which indicates that the MoS 2 /GaN heterostructure without nitridation shows a type-II alignment with a conduction band offset (CBO) of only 0.07 eV. However, by the deployment of interface nitridation, the band edges of MoS 2 move upward for ∼0.5 eV as a result of the nitridized substrate property. The significantly increased CBO could lead to better electron accumulation capability at the GaN side. The nitridized 2D/3D heterostructure with effective interface treatment exhibits a clean band gap and substantial optical absorption ability and could be potentially used as practical photocatalyst for hydrogen generation by water splitting using solar energy.

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

DOE PAGES

Limbach, F.; Gotschke, T.; Stoica, T.; ...

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Höfling, S.; Worschech, L.; Grützmacher, D.

2011-01-01

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling

DTIC Science & Technology

2014-01-08

more energy efficient, lightweight, compact, and less noisy. Studies on ME heterostructures are mostly based on complex oxide piezoelectric ceramic or...except for a recent demonstration of a spin spray deposited ZnO films [17, 18]. ZnO is a typical piezoelectric material , which makes it a good...erties which makes it applicable in a wide variety of electron, optoelectronic, spintronics and nanodevices [17, 18]. The piezoelectric properties of

Probing the structural flexibility of MOFs by constructing metal oxide@MOF-based heterostructures for size-selective photoelectrochemical response

NASA Astrophysics Data System (ADS)

Zhan, Wenwen; He, Yue; Guo, Jiangbin; Chen, Luning; Kong, Xiangjian; Zhao, Haixia; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

2016-07-01

It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies.It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies. Electronic supplementary information (ESI) available: Experimental details, XRD patterns and SEM images of products in other reactions, concentration-dependent photocurrent responses, and supplementary data of dielectric measurements. See DOI: 10.1039/c6nr02257j

Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

PubMed

Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

2017-12-13

Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

Magnetoelectric coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy

NASA Astrophysics Data System (ADS)

Chen, Lei; Wang, Yao

2016-05-01

Magnetoelectric(ME) coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy has been investigated at low frequency. The ME response with obvious hysteresis, self-biased and dual-peak phenomenon is observed for multiferroic heterostructures, which results from strong magnetic interactions between two ferromagnetic materials with different magnetic properties, magnetostrictions and optimum bias magnetic fields Hdc,opti. The proposed multiferroic heterostructures not only enhance ME coupling significantly, but also broaden dc magnetic bias operating range and overcomes the limitations of narrow bias range. By optimizing the thickness of nanocrystalline soft magnetic alloy Tf, a significantly zero-biased ME voltage coefficient(MEVC) of 14.8mV/Oe (185 mV/cmṡ Oe) at Tf = 0.09 mm can be obtained, which is about 10.8 times as large as that of traditional PZT/Terfenol-D composite with a weak ME coupling at zero bias Hdc,zero. Furthermore, when Tf increases from 0.03 mm to 0.18 mm, the maximum MEVC increases nearly linearly with the increased Tf at Hdc,opti. Additionally, the experimental results demonstrate the ME response for multiferroic heterostructures spreads over a wide magnetic dc bias operating range. The excellent ME performance provides a promising and practicable application for both highly sensitive magnetic field sensors without bias and ME energy harvesters.

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

1993-01-01

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

NASA Astrophysics Data System (ADS)

Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

2013-09-01

Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields. Electronic supplementary information (ESI) available: Fig. S1-S8 and Table S1. See DOI: 10.1039/c3nr03601d

Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M.

2006-11-28

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

NASA Astrophysics Data System (ADS)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

Physics and application of persistent spin helix state in semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

Light-matter interaction in transition metal dichalcogenides and their heterostructures

NASA Astrophysics Data System (ADS)

Wurstbauer, Ursula; Miller, Bastian; Parzinger, Eric; Holleitner, Alexander W.

2017-05-01

The investigation of two-dimensional (2D) van der Waals materials is a vibrant, fast-moving and still growing interdisciplinary area of research. These materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers, and have a variety of different electronic, optical and mechanical properties. Transition metal dichalcogenides are a very prominent class of 2D materials, particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-) catalytic and mechanical stability, and exotic many-body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light-matter interaction, providing a high sunlight absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments, and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light-matter interaction in MoS2, WS2, MoSe2 and WSe2, which is dictated by the materials’ complex dielectric functions, and on the multiplicity of studying the first-order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform for stacking them into van der Waals heterostructures without the limitation of lattice mismatch, resulting in novel devices for applications but also to enable the study of exotic many-body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined, and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed.

THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures.

PubMed

Mante, Pierre-Adrien; Huang, Yu-Ru; Yang, Szu-Chi; Liu, Tzu-Ming; Maznev, Alexei A; Sheu, Jinn-Kong; Sun, Chi-Kuang

2015-02-01

Thanks to ultrafast acoustics, a better understanding of acoustic dynamics on a short time scale has been obtained and new characterization methods at the nanoscale have been developed. Among the materials that were studied during the development of ultrafast acoustics, nitride based heterostructures play a particular role due to their piezoelectric properties and the possibility to generate phonons with over-THz frequency and bandwidth. Here, we review some of the work performed using this type of structure, with a focus on THz phonon spectroscopy and nanoscopy. First, we present a brief description of the theory of coherent acoustic phonon generation by piezoelectric heterostructure. Then the first experimental observation of coherent acoustic phonon generated by the absorption of ultrashort light pulses in piezoelectric heterostructures is presented. From this starting point, we then present some methods developed to realize customizable phonon generation. Finally we review some more recent applications of these structures, including imaging with a nanometer resolution, broadband attenuation measurements with a frequency up to 1THz and phononic bandgap characterization. Copyright © 2014 Elsevier B.V. All rights reserved.

Facile preparation of a TiO2 quantum dot/graphitic carbon nitride heterojunction with highly efficient photocatalytic activity

NASA Astrophysics Data System (ADS)

Wang, Xing; Jiang, Subin; Huo, Xuejian; Xia, Rui; Muhire, Elisée; Gao, Meizhen

2018-05-01

In this article, mechanical grinding, an effortless and super-effective synthetic strategy, is used to successfully synthesize a TiO2 quantum dot (TiO2QD)/graphitic carbon nitride (g-C3N4) heterostructure. X-ray photoelectron spectroscopy results together with transmission electron microscopy reveal the formation of the TiO2QD/g-C3N4 heterostructure with strong interfacial interaction. Because of the advantages of this characteristic, the prepared heterostructure exhibits excellent properties for photocatalytic wastewater treatment. Notably, the optimum photocatalytic activity of the TiO2QD/g-C3N4 heterostructure is nearly 3.4 times higher than that of the g-C3N4 nanosheets used for the photodegradation of rhodamine B pollutant. In addition, the stability and possible degradation mechanism of the TiO2QD/g-C3N4 heterojunction are studied in detail. This method may stimulate an effective approach to synthesizing QD-sensitized semiconductor materials and facilitate their application in environmental protection.

In situ degradation studies of two-dimensional WSe₂-graphene heterostructures.

PubMed

Wang, B; Eichfield, S M; Wang, D; Robinson, J A; Haque, M A

2015-09-14

Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

Directional interlayer spin-valley transfer in two-dimensional heterostructures

DOE PAGES

Schaibley, John R.; Rivera, Pasqual; Yu, Hongyi; ...

2016-12-14

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. In this paper, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe 2–WSe 2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weaklymore » dependent on the twist angle between layers. Finally, our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.« less

Conformal Yano-Killing Tensors in General Relativity

NASA Astrophysics Data System (ADS)

Jezierski, Jacek

2011-09-01

How CYK tensors appear in General Relativity? Geometric definition of the asymptotic flat spacetime: strong asymptotic flatness, which guarantees well defined total angular momentum [2, 3, 4] Conserved quantities - asymptotic charges (ℐ, 𝓲0) [2, 3, 4, 5, 6, 9] Quasi-local mass and "rotational energy" for Kerr black hole [5] Constants of motion along geodesics and symmetric Killing tensors [5, 6] Spacetimes possessing CYK tensor [10]: Minkowski (quadratic polynomials) [5] (Anti-)deSitter (natural construction) [7, 8, 9] Kerr (type D spacetime) [5] Taub-NUT (new symmetric conformal Killing tensors) [6] Other applications: Symmetries of Dirac operator Symmetries of Maxwell equations

Heterostructure-based high-speed/high-frequency electronic circuit applications

NASA Astrophysics Data System (ADS)

Zampardi, P. J.; Runge, K.; Pierson, R. L.; Higgins, J. A.; Yu, R.; McDermott, B. T.; Pan, N.

1999-08-01

With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J. Power-amplifier MMICs drive commercial circuits. Microwaves & RF, 1998. p. 116-24.]. In particular, HBTs are an attractive device for handset power amplifiers at 900 MHz and 1.9 GHz for CDMA applications [Lum E. GaAs technology rides the wireless wave. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 11-13; "Rockwell Ramps Up". Compound Semiconductor, May/June 1997.]. At higher frequencies, both HBTs and p-HEMTs are expected to dominate the marketplace. For high-speed lightwave circuit applications, heterostructure based products on the market for OC-48 (2.5 Gb/s) and OC-192 (10 Gb/s) are emerging [http://www.nb.rockwell.com/platforms/network_access/nahome.html#5.; http://www.nortel.com/technology/opto/receivers/ptav2.html.]. Chips that operate at 40 Gb/ have been demonstrated in a number of research laboratories [Zampardi PJ, Pierson RL, Runge K, Yu R, Beccue SM, Yu J, Wang KC. hybrid digital/microwave HBTs for >30 Gb/s optical communications. IEDM Technical Digest, 1995. p. 803-6; Swahn T, Lewin T, Mokhtari M, Tenhunen H, Walden R, Stanchina W. 40 Gb/s 3 Volt InP HBT ICs for a fiber optic demonstrator system. Proceedings of the 1996 GaAs IC Symposium, 1996. p. 125-8; Suzuki H, Watanabe K, Ishikawa K, Masuda H, Ouchi K, Tanoue T, Takeyari R. InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 215-8]. In addition to these two markets, another area where heterostructure devices are having significant impact is for data conversion [Walden RH. Analog-to digital convertor technology comparison. Proceedings of the 1994 GaAs IC Symposium, 1994. p. 217-9; Poulton K, Knudsen K, Corcoran J, Wang KC, Nubling RB, Chang M-CF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC. IEEE J Solid-State Circuits 1995;30:1109-18; Nary K, Nubling R, Beccue S, Colleran W, Penney J, Wang KC. An 8-bit, 2 gigasample per second analog to digital converter. Proceedings of the 1995 GaAs IC Symposium, 1995. p. 303-6.]. In this paper, we will discuss the present and future trends of heterostructure device applications to these areas.

Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts.

PubMed

Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

2013-10-21

Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.

Reduced-order surrogate models for Green's functions in black hole spacetimes

NASA Astrophysics Data System (ADS)

Galley, Chad; Wardell, Barry

2016-03-01

The fundamental nature of linear wave propagation in curved spacetime is encoded in the retarded Green's function (or propagator). Green's functions are useful tools because almost any field quantity of interest can be computed via convolution integrals with a source. In addition, perturbation theories involving nonlinear wave propagation can be expressed in terms of multiple convolutions of the Green's function. Recently, numerical solutions for propagators in black hole spacetimes have been found that are globally valid and accurate for computing physical quantities. However, the data generated is too large for practical use because the propagator depends on two spacetime points that must be sampled finely to yield accurate convolutions. I describe how to build a reduced-order model that can be evaluated as a substitute, or surrogate, for solutions of the curved spacetime Green's function equation. The resulting surrogate accurately and quickly models the original and out-of-sample data. I discuss applications of the surrogate, including self-consistent evolutions and waveforms of extreme mass ratio binaries. Green's function surrogate models provide a new and practical way to handle many old problems involving wave propagation and motion in curved spacetimes.

Existence and stability of circular orbits in general static and spherically symmetric spacetimes

NASA Astrophysics Data System (ADS)

Jia, Junji; Liu, Jiawei; Liu, Xionghui; Mo, Zhongyou; Pang, Xiankai; Wang, Yaoguang; Yang, Nan

2018-02-01

The existence and stability of circular orbits (CO) in static and spherically symmetric (SSS) spacetime are important because of their practical and potential usefulness. In this paper, using the fixed point method, we first prove a necessary and sufficient condition on the metric function for the existence of timelike COs in SSS spacetimes. After analyzing the asymptotic behavior of the metric, we then show that asymptotic flat SSS spacetime that corresponds to a negative Newtonian potential at large r will always allow the existence of CO. The stability of the CO in a general SSS spacetime is then studied using the Lyapunov exponent method. Two sufficient conditions on the (in)stability of the COs are obtained. For null geodesics, a sufficient condition on the metric function for the (in)stability of null CO is also obtained. We then illustrate one powerful application of these results by showing that three SSS spacetimes whose metric function is not completely known will allow the existence of timelike and/or null COs. We also used our results to assert the existence and (in)stabilities of a number of known SSS metrics.

Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

PubMed

Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

2013-02-06

Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Facile synthesis of Ag@ZIF-8 core-shell heterostructure nanowires for improved antibacterial activities

NASA Astrophysics Data System (ADS)

Guo, Yu-Feng; Fang, Wei-Jun; Fu, Jie-Ru; Wu, Yun; Zheng, Jun; Gao, Gui-Qi; Chen, Cheng; Yan, Rui-Wen; Huang, Shou-Guo; Wang, Chun-Chang

2018-03-01

Compared with pure MOFs, core-shell heterostructures of noble-metal@MOFs have attracted tremendous interest due to their unique structure and extensive applications. In the present study, we have successfully synthesized well-defined core-shell Ag@ZIF-8 nanowires. The products growth process has been investigated by examining the products obtained at different intervals and the thickness of ZIF-8 shell ranging from 30 to 100 nm can be technically obtained by tuning the quantity of Ag nanowires. Ag@ZIF-8 has been proven to possess large specific surfaces and high thermal stability. Additionally, the antibacterial activity of Ag@ZIF-8 is further tested against Bacillus subtilis and Escherichia coli BL21. The results reveal that Ag@ZIF-8 core-shell heterostructure nanowires have effective activities against the two types of bacterial strains.

First principle study of heterostructure of BaBi3-stanene for topological superconductor applications

NASA Astrophysics Data System (ADS)

Kore, Ashish; Singh, Poorva

2018-05-01

We have studied the heterostructure of BaBi3 (superconductor) and stanene (topological insulator) with the aim of inducing topological superconductivity in stanene, due to proximity with superconductor BaBi3. The density functional theory calculations have been done for 2D structure of BaBi3 as well as for monolayer of stanene, separately. We find that compared to bulk BaBi3, the 2D bandstructure has contributions coming from both Ba and Bi atoms, unlike bulk where only Bi-p states are contributing to the bandstructure. Surface reconstruction of surface and sub-surface layer of 2D BaBi3 is also evident. The bandstructure of heterostructure of BaBi3-stanene is expected to bring out explicit features of topological superconductivity and indicating the presence of Majorana fermions.

Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun

2016-06-06

We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead tomore » spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.« less

TEM-nanoindentation studies of semiconducting structures.

PubMed

Le Bourhis, E; Patriarche, G

2007-01-01

This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.

Two dimensional graphene nanogenerator by coulomb dragging: Moving van der Waals heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Huikai; Li, Xiaoqiang; Wu, Zhiqian

2015-06-15

Harvesting energy from environment is the current focus of scientific community. Here, we demonstrate a graphene nanogenerator, which is based on moving van der Waals heterostructure formed between graphene and two dimensional (2D) graphene oxide (GO). This nanogenerator can convert mechanical energy into electricity with a voltage output of around 10 mV. Systematic experiments reveal the generated electricity originates from the coulomb interaction induced momentum transfer between 2D GO and holes in graphene. 2D boron nitride was also demonstrated to be effective in the framework of moving van der Waals heterostructure nanogenerator. This investigation of nanogenerator based on the interaction betweenmore » 2D macromolecule materials will be important to understand the origin of the flow-induced potential in nanomaterials and may have great potential in practical applications.« less

Spin Hall Effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures.

PubMed

Garcia, Jose H; Cummings, Aron W; Roche, Stephan

2017-08-09

We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS 2 system is found to maximize spin proximity effects compared to graphene on MoS 2 , WSe 2 , or MoSe 2 with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Investigation of energy band alignments and interfacial properties of rutile NMO2/TiO2 (NM = Ru, Rh, Os, and Ir) by first-principles calculations.

PubMed

Yang, Chen; Zhao, Zong-Yan

2017-11-08

In the field of photocatalysis, constructing hetero-structures is an efficient strategy to improve quantum efficiency. However, a lattice mismatch often induces unfavorable interfacial states that can act as recombination centers for photo-generated electron-hole pairs. If the hetero-structure's components have the same crystal structure, this disadvantage can be easily avoided. Conversely, in the process of loading a noble metal co-catalyst onto the TiO 2 surface, a transition layer of noble metal oxides is often formed between the TiO 2 layer and the noble metal layer. In this article, interfacial properties of hetero-structures composed of a noble metal dioxide and TiO 2 with a rutile crystal structure have been systematically investigated using first-principles calculations. In particular, the Schottky barrier height, band bending, and energy band alignments are studied to provide evidence for practical applications. In all cases, no interfacial states exist in the forbidden band of TiO 2 , and the interfacial formation energy is very small. A strong internal electric field generated by interfacial electron transfer leads to an efficient separation of photo-generated carriers and band bending. Because of the differences in the atomic properties of the components, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures demonstrate band dividing, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures have a pseudo-gap near the Fermi energy level. Furthermore, NMO 2 /TiO 2 hetero-structures show upward band bending. Conversely, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures present a relatively strong infrared light absorption, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures show an obvious absorption edge in the visible light region. Overall, considering all aspects of their properties, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures are more suitable than others for improving the photocatalytic performance of TiO 2 . These findings will provide useful information for understanding the role and effects of a noble metal dioxide as a transition layer between a noble metal co-catalyst and a TiO 2 photocatalyst.

Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2

PubMed Central

Wang, Fang; Wang, Junyong; Guo, Shuang; Zhang, Jinzhong; Hu, Zhigao; Chu, Junhao

2017-01-01

The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS2-WS2 heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS2-WSe2 and WS2-WSe2 heterostructure is less sensitive to the interlayer spacing than those from the MoS2-WS2 heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 based device applications. PMID:28303932

Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures.

PubMed

Sun, Minglei; Chou, Jyh-Pin; Yu, Jin; Tang, Wencheng

2017-07-05

Blue phosphorene (BlueP) is a graphene-like phosphorus nanosheet which was synthesized very recently for the first time [Nano Lett., 2016, 16, 4903-4908]. The combination of electronic properties of two different two-dimensional materials in an ultrathin van der Waals (vdW) vertical heterostructure has been proved to be an effective approach to the design of novel electronic and optoelectronic devices. Therefore, we used density functional theory to investigate the structural and electronic properties of two BlueP-based heterostructures - BlueP/graphene (BlueP/G) and BlueP/graphene-like gallium nitride (BlueP/g-GaN). Our results showed that the semiconducting nature of BlueP and the Dirac cone of G are well preserved in the BlueP/G vdW heterostructure. Moreover, by applying a perpendicular electric field, it is possible to tune the position of the Dirac cone of G with respect to the band edge of BlueP, resulting in the ability to control the Schottky barrier height. For the BlueP/g-GaN vdW heterostructure, BlueP forms an interface with g-GaN with a type-II band alignment, which is a promising feature for unipolar electronic device applications. Furthermore, we discovered that both G and g-GaN can be used as an active layer for BlueP to facilitate charge injection and enhance the device performance.

Marginally outer trapped surfaces and symmetries

NASA Astrophysics Data System (ADS)

Carrasco, Alberto; Mars, Marc

2009-05-01

We study properties of outermost marginally outer trapped surfaces in slices of space-times possessing certain symmetries, like isometries, homotheties or conformal Killings. In particular, we find restrictions on these surfaces for the vector field generating the symmetry. As an application we give a result of non-existence of outermost marginally outer trapped surfaces in accelerated Friedmann-Lemaître-Roberson-Walker spacetimes.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

NASA Astrophysics Data System (ADS)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the junctions. Our new approach offers greater flexibility and control than previous methods for continuous growth of transition-metal-dichalcogenide-based multi-junction lateral heterostructures. These findings could be extended to other families of two-dimensional materials, and establish a foundation for the development of complex and atomically thin in-plane superlattices, devices and integrated circuits.

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

2018-06-01

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm-2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V.s at 40 K and 123 cm2/V.s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of -7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.

Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

PubMed Central

Oezelt, Harald; Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon; Gusenbauer, Markus; Schubert, Christian; Albrecht, Manfred; Schrefl, Thomas

2015-01-01

Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau–Lifshitz–Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed. PMID:25937693

Enhancing Light Emission of ZnO-Nanofilm/Si-Micropillar Heterostructure Arrays by Piezo-Phototronic Effect.

PubMed

Li, Xiaoyi; Chen, Mengxiao; Yu, Ruomeng; Zhang, Taiping; Song, Dongsheng; Liang, Renrong; Zhang, Qinglin; Cheng, Shaobo; Dong, Lin; Pan, Anlian; Wang, Zhong Lin; Zhu, Jing; Pan, Caofeng

2015-06-22

n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zinc-oxide-based nanostructured materials for heterostructure solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A., E-mail: vamoshnikov@mail.ru

Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

Aligned TiO₂ nanotube/nanoparticle heterostructures with enhanced electrochemical performance as three-dimensional anode for lithium-ion microbatteries.

PubMed

Xie, Keyu; Guo, Min; Lu, Wei; Huang, Haitao

2014-11-14

A novel TiO₂ three-dimensional (3D) anode with an aligned TiO₂ nanotube/nanoparticle heterostructure (TiO₂ NTs/NPs) is developed by simply immersing as-anodized TiO₂ NTs into water and further crystallizing the TiO₂ NTs by post-annealing. The heterostructure, with its core in a tubular morphology and with both the outer and inner surface consisting of nanoparticles, is confirmed by FESEM and TEM. A reversible areal capacity of 0.126 mAh · cm(-2) is retained after 50 cycles for the TiO₂ NTs/NPs heterostructure electrode, which is higher than that of the TiO₂ NTs electrode (0.102 mAh · cm(-2) after 50 cycles). At the current densities of 0.02, 0.04, 0.06, 0.08, 0.10 and 0.20 mA · cm(-2), the areal capacities are 0.142, 0.127, 0.117, 0.110, 0.104 and 0.089 mAh · cm(-2), respectively, for the TiO₂ NTs/NPs heterostructure electrode compared to the areal capacities of 0.123, 0.112, 0.105, 0.101, 0.094 and 0.083 mAh · cm(-2), respectively, for the the TiO₂ NTs electrode. The enhanced electrochemical performance is attributed to the unique microstructure of the TiO₂ NTs/NPs heterostructure electrode with the TiO₂ NT core used as a straight pathway for electronic transport and with TiO₂ NP offering enhanced surface areas for facile Li+ insertion/extraction. The results described here inspire a facile approach to fabricate a 3D anode with an enhanced electrochemical performance for lithium-ion microbattery applications.

Molecular level control of nanoscale composition and morphology: Toward photocatalytic nanocomposites for solar-to-chemical energy conversion of biomass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruberu, Thanthrige P.

2013-01-01

Understanding the factors influencing nanocrystal formation is a challenge yet to be realized. In comparison to the large number of studies on nanocrystal synthesis and their applications, the number of studies on the effect of the precursor chemistry on nanocrystal composition and shape remains low. Although photochemical fabrication of metalsemiconductor nano-heterostructures is reported in literature, control over the free particle formation and the site of metal deposition have not been achieved. Moreover, utilization of metal- semiconductor nano-heterostructures in photocatalytic reactions other than water splitting is hardly explored. In this thesis, we studied the effect of chalcogenide precursor reactivity on themore » composition, morphology and the axial anisotropy of cadmiumchalcogenide nanocrystals. We also investigated the influence of the irradiation wavelength in synthesizing metal-semiconductor nano-heterostructures. Finally, we showed that metal semiconductor nano-heterostructures can be used as a photocatalyst for alcohol dehydrogenation reactions. We explored the pathways for the formation of Pt and Pd nanoparticles on CdS and CdS{sub 0.4}Se{sub 0.6} nanorods. This study revealed that the wavelength of irradiation is critical to control free-standing vs. bound metal (Pt and Pd) nanoparticles to semiconductor. Additionally, we observed that metal photodeposition occurs on specific segments of axially anisotropic, compositionally graded CdS0.4Se0.6 nanorods due to the band-gap differential between their nano-domains. We used semiconductor-metal heterostructures for sunlightdriven dehydrogenation and hydrogenolysis of benzyl alcohol. Heterostructure composition dictates activity (turnovers) and product distribution. A few metal (Pt, Pd) islands on the semiconductor surface significantly enhance activity and selectivity and also greatly stabilize the semiconductor against photoinduced etching and degradation.« less

Co-electrospun lead selenide/titania-core/sheath nanowires for photovoltaic applications.

DOT National Transportation Integrated Search

2012-12-01

This study presents a novel, low-cost, all-inorganic lead selenide-titania (PbSe/TiO2) nanowire : heterostructure material synthesis for photovoltaic applications. PbSe nanorods (NRs) have been coelectrospun : within a TiO2 nanotube with high connect...

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

Conformal Collineations of the Ricci and Energy-Momentum Tensors in Static Plane Symmetric Space-Times

NASA Astrophysics Data System (ADS)

Akhtar, S. S.; Hussain, T.; Bokhari, A. H.; Khan, F.

2018-04-01

We provide a complete classification of static plane symmetric space-times according to conformal Ricci collineations (CRCs) and conformal matter collineations (CMCs) in both the degenerate and nondegenerate cases. In the case of a nondegenerate Ricci tensor, we find a general form of the vector field generating CRCs in terms of unknown functions of t and x subject to some integrability conditions. We then solve the integrability conditions in different cases depending upon the nature of the Ricci tensor and conclude that the static plane symmetric space-times have a 7-, 10- or 15-dimensional Lie algebra of CRCs. Moreover, we find that these space-times admit an infinite number of CRCs if the Ricci tensor is degenerate. We use a similar procedure to study CMCs in the case of a degenerate or nondegenerate matter tensor. We obtain the exact form of some static plane symmetric space-time metrics that admit nontrivial CRCs and CMCs. Finally, we present some physical applications of our obtained results by considering a perfect fluid as a source of the energy-momentum tensor.

Effect of a magnetic field on Schwinger mechanism in de Sitter spacetime

NASA Astrophysics Data System (ADS)

Bavarsad, Ehsan; Kim, Sang Pyo; Stahl, Clément; Xue, She-Sheng

2018-01-01

We investigate the effect of a uniform magnetic field background on scalar QED pair production in a four-dimensional de Sitter spacetime (dS4 ). We obtain a pair production rate which agrees with the known Schwinger result in the limit of Minkowski spacetime and with Hawking radiation in dS spacetime in the zero electric field limit. Our results describe how the cosmic magnetic field affects the pair production rate in cosmological setups. In addition, using the zeta function regularization scheme we calculate the induced current and examine the effect of a magnetic field on the vacuum expectation value of the current operator. We find that, in the case of a strong electromagnetic background the current responds as E .B , while in the infrared regime, it responds as B /E , which leads to a phenomenon of infrared hyperconductivity. These results for the induced current have important applications for the cosmic magnetic field evolution.

Exposing high-energy surfaces by rapid-anneal solid phase epitaxy

DOE PAGES

Wang, Y.; Song, Y.; Peng, R.; ...

2017-08-08

The functional design of nanoscale transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Much of the time, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to energy-lowering faceting transitions. We propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of atomically flat, high surface free energy oxide heterostructures. We also demonstratemore » its efficacy via the synthesis of atomically flat, epitaxial RuO 2(001) films with a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO 2(110) films.« less

CuI as Hole-Transport Channel for Enhancing Photoelectrocatalytic Activity by Constructing CuI/BiOI Heterojunction.

PubMed

Sun, Mingjuan; Hu, Jiayue; Zhai, Chunyang; Zhu, Mingshan; Pan, Jianguo

2017-04-19

In this paper, CuI, as a typical hole-transport channel, was used to construct a high-performance visible-light-driven CuI/BiOI heterostructure for photoelectrocatalytic applications. The heterostructure combines the broad visible absorption of BiOI and high hole mobility of CuI. Compared to pure BiOI, the CuI/BiOI heterostructure exhibited distinctly enhanced photoelectrocatalytic performance for the oxidation of methanol and organic pollutants under visible-light irradiation. The photogenerated electron-hole pairs of the excited BiOI can be separated efficiently through CuI, in which the CuI acts as a superior hole-transport channel to improve photoelectrocatalytic oxidization of methanol and organic pollutants. The outstanding photoelectrocatalytic activity shows that the p-type CuI works as a promising hole-transport channel to improve the photocatalytic performance of traditional semiconductors.

Interface Physics in Complex Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Zubko, Pavlo; Gariglio, Stefano; Gabay, Marc; Ghosez, Philippe; Triscone, Jean-Marc

2011-03-01

Complex transition metal oxides span a wide range of crystalline structures and play host to an incredible variety of physical phenomena. High dielectric permittivities, piezo-, pyro-, and ferroelectricity are just a few of the functionalities offered by this class of materials, while the potential for applications of the more exotic properties like high temperature superconductivity and colossal magnetoresistance is still waiting to be fully exploited. With recent advances in deposition techniques, the structural quality of oxide heterostructures now rivals that of the best conventional semiconductors, taking oxide electronics to a new level. Such heterostructures have enabled the fabrication of artificial multifunctional materials. At the same time they have exposed a wealth of phenomena at the boundaries where compounds with different structural instabilities and electronic properties meet, giving unprecedented access to new physics emerging at oxide interfaces. Here we highlight some of these exciting new interface phenomena.

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Mingda; Song, Qichen; Zhao, Weiwei

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

van der Waals Heterostructures with High Accuracy Rotational Alignment.

PubMed

Kim, Kyounghwan; Yankowitz, Matthew; Fallahazad, Babak; Kang, Sangwoo; Movva, Hema C P; Huang, Shengqiang; Larentis, Stefano; Corbet, Chris M; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; LeRoy, Brian J; Tutuc, Emanuel

2016-03-09

We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE PAGES

Li, Mingda; Song, Qichen; Zhao, Weiwei; ...

2017-11-01

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Enhanced magnetocaloric effect material

DOEpatents

Lewis, Laura J. H.

2006-07-18

A magnetocaloric effect heterostructure having a core layer of a magnetostructural material with a giant magnetocaloric effect having a magnetic transition temperature equal to or greater than 150 K, and a constricting material layer coated on at least one surface of the magnetocaloric material core layer. The constricting material layer may enhance the magnetocaloric effect by restriction of volume changes of the core layer during application of a magnetic field to the heterostructure. A magnetocaloric effect heterostructure powder comprising a plurality of core particles of a magnetostructural material with a giant magnetocaloric effect having a magnetic transition temperature equal to or greater than 150 K, wherein each of the core particles is encapsulated within a coating of a constricting material is also disclosed. A method for enhancing the magnetocaloric effect within a giant magnetocaloric material including the step of coating a surface of the magnetocaloric material with a constricting material is disclosed.

Controlling the electronic properties of van der Waals heterostructures by applying electrostatic design

NASA Astrophysics Data System (ADS)

Winkler, Christian; Harivyasi, Shashank S.; Zojer, Egbert

2018-07-01

Van der Waals heterostructures based on the heteroassembly of 2D materials represent a recently developed class of materials with promising properties especially for optoelectronic applications. The alignment of electronic energy bands between consecutive layers of these heterostructures crucially determines their functionality. In the present paper, relying on dispersion-corrected density-functional theory calculations, we present electrostatic design as a promising tool for manipulating this band alignment. The latter is achieved by inserting a layer of aligned polar molecules between consecutive transition-metal dichalcogenide (TMD) sheets. As a consequence, collective electrostatic effects induce a shift of as much as 0.3 eV in the band edges of successive TMD layers. Building on that, the proposed approach can be used to design electronically more complex systems, like quantum cascades or quantum wells, or to change the type of band lineup between type II and type I.

Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Z. Q.; Chim, W. K.; Chiam, S. Y

2011-11-01

In this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a newmore » correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model.« less

Epitaxial cuprate superconductor/ferroelectric heterostructures.

PubMed

Ramesh, R; Inam, A; Chan, W K; Wilkens, B; Myers, K; Remschnig, K; Hart, D L; Tarascon, J M

1991-05-17

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

NASA Astrophysics Data System (ADS)

Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

2017-04-01

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

Development of Si/SiGe heterostructures

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Veteran, J. L.; Young, M. H.

1991-01-01

New molecular beam epitaxy (MBE) materials growth and doping processes were developed for the fabrication of Si/SiGe heterostructure devices. These new materials processes are applied to the demonstration of cryogenic n-p-n Si/Si 1-x Gex/Si heterojunction bipolar transistors (HBT). This application has special significance as an enabling DoD technology for fast low noise, high performance readout and signal processing circuits for IR focal systems. Reliable, versatile methods were developed to grow very high quality Si/SiGe strained layer heterostructures and multilayers. In connection with this program methods were developed to dope the Si and SiGe with B, Sb and Ga. B and Sb were found to be the preferred dopants for p and n regions respectively, of the HBT devices. The test devices clearly displayed gain enhancement due to the heterojunction and provided useful gains from room temperature down to 10 K.

Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

2018-03-01

Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

Self-powered highly enhanced broad wavelength (UV to visible) photoresponse of ZnO@ZnO1-xSx@ZnS core-shell heterostructures.

PubMed

Sarkar, Sanjit; Das Mahapatra, Ayon; Basak, Durga

2018-08-01

In the present scenario of energy crisis, it is inevitable to focus on the low powered or self-powered devices. Multi-spectral photoresponse is an additional advantage to the above feature. We have developed an efficient self-powered photodetector with broad wavelength detection range based on heterostructures of two wide band-gap materials ZnO and ZnS. More than two orders higher responsivity and 'ON/OFF' ratio has been observed in case of heterostructure sample as compared to pristine ZnO. On the basis of the controlled experimental results, it has been established that the interfacial surface engineering, can be useful to improve the visible response and a significant photovoltaic performance under visible light illumination can be achieved. Unlike the other recent reports on self-powered UV-visible photodetector, we have achieved two order higher visible response without compromising the UV photoresponse. Unprecedented broad wavelength photodetection in self-powered mode in the present study highlights the uniqueness and advantage of an interface in a core-shell heterostructure for photodetection applications. Copyright © 2018 Elsevier Inc. All rights reserved.

Magnetometory Measurement of AlGaN/GaN 2DEG

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2004-03-01

AlGaN/GaN heterostructure devices have been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the magnetometory measurement of AlGaN/GaN 2DEG at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540 cm^2/Vs and 6.6 × 10^12 cm-2, respectively. When the temperature is lower than 4.5 K the hysteresis of magnetometric data is observed near zero magnetic field. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears and the slope of magnetometric data with respect to magnetic field becomes lower as obeying Currie-Weiss law. In general the hysteresis and Currie-Weiss law behavior in magnetometric data imply the possibility of the ferromagnetism, but the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications

NASA Astrophysics Data System (ADS)

Fuchs, C.; Beyer, A.; Volz, K.; Stolz, W.

2017-04-01

The growth of high quality (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well heterostructures is discussed with respect to their application in 1300 nm laser devices. The structures are grown using metal organic vapor phase epitaxy and characterized using high-resolution X-ray diffraction, scanning transmission electron microscopy and photoluminescence measurements. The agreement between experimental high-resolution X-ray diffraction patterns and full dynamical simulations is verified for these structurally challenging heterostructures. Scanning transmission electron microscopy is used to demonstrate that the structure consists of well-defined quantum wells and forms the basis for future improvements of the optoelectronic quality of this materials system. By altering the group-V gas phase ratio, it is possible to cover a large spectral range between 1200 nm and 1470 nm using a growth temperature of 550 °C and a V/III ratio of 7.5. A comparison of a sample with a photoluminescence emission wavelength at 1360 nm with single quantum well material reference samples proves the type-II character of the emission. A further optimization of these structures for application in 1300 nm lasers by applying different V/III ratios yields a stable behavior of the photoluminescence intensity using a growth temperature of 550 °C.

Regge calculus and observations. II. Further applications.

NASA Astrophysics Data System (ADS)

Williams, Ruth M.; Ellis, G. F. R.

1984-11-01

The method, developed in an earlier paper, for tracing geodesies of particles and light rays through Regge calculus space-times, is applied to a number of problems in the Schwarzschild geometry. It is possible to obtain accurate predictions of light bending by taking sufficiently small Regge blocks. Calculations of perihelion precession, Thomas precession, and the distortion of a ball of fluid moving on a geodesic can also show good agreement with the analytic solution. However difficulties arise in obtaining accurate predictions for general orbits in these space-times. Applications to other problems in general relativity are discussed briefly.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.

PubMed

Broderick, Christopher A; Jin, Shirong; Marko, Igor P; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L; Stolz, Wolfgang; Rorison, Judy M; O'Reilly, Eoin P; Volz, Kerstin; Sweeney, Stephen J

2017-04-19

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs 1-x Bi x /GaN y As 1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs 0.967 Bi 0.033 /GaN 0.062 As 0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

NASA Astrophysics Data System (ADS)

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O'Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-04-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1-xBix/GaNyAs1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

PubMed Central

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O’Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-01-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications. PMID:28422129

Ferroelectricity in Pb 1+δZrO 3 Thin Films

DOE PAGES

Gao, Ran; Reyes-Lillo, Sebastian E.; Xu, Ruijuan; ...

2017-07-16

Antiferroelectric PbZrO 3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO 3 thin films and understanding the chemistry structure coupling in Pb 1+δ ZrO 3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb 1+δZrO 3 films are synthesized via pulsed-laser deposition. Though no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO 3 and Pb 1.1ZrO 3 heterostructures remain intrinsically antiferroelectric, the Pb 1.2ZrO 3 heterostructures exhibit a hysteresis loopmore » indicative of ferroelectric response. Furthermore X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO 3 and Pb 1.1ZrO 3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb 1.2ZrO 3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite Pb-Zr defects, which drive the Pb 1.2ZrO 3 heterostructures to a ferroelectric phase with R3c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.« less

Insights into the photocatalytic mechanism of mediator-free direct Z-scheme g-C3N4/Bi2MoO6(010) and g-C3N4/Bi2WO6(010) heterostructures: A hybrid density functional theory study

NASA Astrophysics Data System (ADS)

Opoku, Francis; Govender, Krishna Kuben; Sittert, Cornelia Gertina Catharina Elizabeth van; Govender, Penny Poomani

2018-01-01

Graphite-like carbon nitride (g-C3N4)-based heterostructures have received much attention due to their prominent photocatalytic activity. The g-C3N4/Bi2WO6 and g-C3N4/Bi2MoO6 heterostructures, which follow a typical hetero-junction charge transfer mechanisms show a weak potential for hydrogen evolution and reactive radical generation under visible light irradiation. A mediator-free Z-scheme g-C3N4/Bi2MoO6(010) and g-C3N4/Bi2WO6(010) heterostructures photocatalyst are designed for the first time using first-principles studies. Moreover, theoretical understanding of the underlying mechanism, the effects of interfacial composition and the role the interface play in the overall photoactivity is still unexplained. The calculated band gap of the heterostructures is reduced compared to the bulk Bi2WO6 and Bi2MoO6. In this study, we systematically calculated energy band structure, optical properties and charge transfer of the g-C3N4/Bi2MoO6(010) and g-C3N4/Bi2WO6(010) heterostructures using the hybrid density functional theory approach. The results show that the charge transfer at the interface of the heterostructures induces a built-in potential, which benefits the separation of photogenerated charge carriers. The g-C3N4/Bi2MoO6(010) heterostructure with more negative adhesion energy (-1.10 eVA-2) is predicted to have a better adsorptive ability and can form more easily compared to the g-C3N4/Bi2WO6(010) interface (-1.16 eVA-2). Therefore, our results show that the g-C3N4 interaction with Bi2MoO6 is stronger than Bi2WO6, which is also verified by the smaller vertical separation (3.25 Å) between Bi2MoO6 and g-C3N4 compared to the g-C3N4/Bi2WO6(010) interface (3.36 Å). The optical absorption verifies that these proposed Z-scheme heterostructures are excellent visible light harvesting semiconductor photocatalyst materials. This enhancement is ascribed to the role of g-C3N4 monolayer as an electron acceptor and the direct Z-scheme charge carrier transfer at the interface of the heterostructures. This work is useful for designing new types of Z-scheme photocatalyst and offers new insight into Z-scheme charge transfer mechanism for applications in the field of solar energy conversion.

The 1-loop effective potential for the Standard Model in curved spacetime

NASA Astrophysics Data System (ADS)

Markkanen, Tommi; Nurmi, Sami; Rajantie, Arttu; Stopyra, Stephen

2018-06-01

The renormalisation group improved Standard Model effective potential in an arbitrary curved spacetime is computed to one loop order in perturbation theory. The loop corrections are computed in the ultraviolet limit, which makes them independent of the choice of the vacuum state and allows the derivation of the complete set of β-functions. The potential depends on the spacetime curvature through the direct non-minimal Higgs-curvature coupling, curvature contributions to the loop diagrams, and through the curvature dependence of the renormalisation scale. Together, these lead to significant curvature dependence, which needs to be taken into account in cosmological applications, which is demonstrated with the example of vacuum stability in de Sitter space.

Variation of refractive index in strained In(x)Ga(1-x)As-GaAs heterostructures

NASA Technical Reports Server (NTRS)

Das, U.; Bhattacharya, P. K.

1986-01-01

In(x)Ga(1-x)As-GaAs heterostructures and strained-layer superlattices can be used as optical waveguides. For such applications it is important to know explicitly the refractive index variation with mismatch strain and with alloying in the ternary layer. Starting from the Kramers-Kronig integral dispersion relations, a model has been developed from which the refractive index change in the ternary layer of In(x)Ga(1-x)As-GaAs heterojunctions can be calculated. The results are presented and discussed. The expected changes in a superlattice have been qualitatively predicted.

Low-energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure

NASA Astrophysics Data System (ADS)

Di Gaspare, L.; Capellini, G.; Chudoba, C.; Sebastiani, M.; Evangelisti, F.

1996-09-01

We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 ± 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.

Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs heterostructures

DOE PAGES

Raichev, O. E.; Hatke, A. T.; Zudov, M. A.; ...

2017-08-22

We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which exhibits a pronounced maximum followed by a plateau. With increasing temperature, the nonlinearity diminishes and disappears. These observations can be understood in terms of a crossover from the Bloch-Gr¨uneisen regime to the quasielastic scattering regime as the electrons are heated by direct current. Calculations considering interaction of electrons with acoustic phonons provide reasonable description of our experimental findings.

A space-time tensor formulation for continuum mechanics in general curvilinear, moving, and deforming coordinate systems

NASA Technical Reports Server (NTRS)

Avis, L. M.

1976-01-01

Tensor methods are used to express the continuum equations of motion in general curvilinear, moving, and deforming coordinate systems. The space-time tensor formulation is applicable to situations in which, for example, the boundaries move and deform. Placing a coordinate surface on such a boundary simplifies the boundary condition treatment. The space-time tensor formulation is also applicable to coordinate systems with coordinate surfaces defined as surfaces of constant pressure, density, temperature, or any other scalar continuum field function. The vanishing of the function gradient components along the coordinate surfaces may simplify the set of governing equations. In numerical integration of the equations of motion, the freedom of motion of the coordinate surfaces provides a potential for enhanced resolution of the continuum field function. An example problem of an incompressible, inviscid fluid with a top free surface is considered, where the surfaces of constant pressure (including the top free surface) are coordinate surfaces.

Loop Quantum Cosmology.

PubMed

Bojowald, Martin

2008-01-01

Quantum gravity is expected to be necessary in order to understand situations in which classical general relativity breaks down. In particular in cosmology one has to deal with initial singularities, i.e., the fact that the backward evolution of a classical spacetime inevitably comes to an end after a finite amount of proper time. This presents a breakdown of the classical picture and requires an extended theory for a meaningful description. Since small length scales and high curvatures are involved, quantum effects must play a role. Not only the singularity itself but also the surrounding spacetime is then modified. One particular theory is loop quantum cosmology, an application of loop quantum gravity to homogeneous systems, which removes classical singularities. Its implications can be studied at different levels. The main effects are introduced into effective classical equations, which allow one to avoid the interpretational problems of quantum theory. They give rise to new kinds of early-universe phenomenology with applications to inflation and cyclic models. To resolve classical singularities and to understand the structure of geometry around them, the quantum description is necessary. Classical evolution is then replaced by a difference equation for a wave function, which allows an extension of quantum spacetime beyond classical singularities. One main question is how these homogeneous scenarios are related to full loop quantum gravity, which can be dealt with at the level of distributional symmetric states. Finally, the new structure of spacetime arising in loop quantum gravity and its application to cosmology sheds light on more general issues, such as the nature of time. Supplementary material is available for this article at 10.12942/lrr-2008-4.

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

NASA Astrophysics Data System (ADS)

Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

2017-02-01

Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device `on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

NASA Astrophysics Data System (ADS)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Zhongguang; Khanaki, Alireza; Tian, Hao

2016-07-25

Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layersmore » were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.« less

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures.

PubMed

Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing

2018-01-10

Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Yuan, Hao; Li, Zhenyu

2018-06-01

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zr n+1C n T2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zr n+1C n T2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/Å electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

PubMed

Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

2018-03-01

It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review

NASA Astrophysics Data System (ADS)

Ray, Samit K.; Katiyar, Ajit K.; Raychaudhuri, Arup K.

2017-03-01

Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study.

PubMed

Bano, Amreen; Gaur, N K

2018-01-15

A variety of theoretical and experimental works have reported several potential applications of MoS 2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS 2 monolayer deposited over insulating SrTiO 3 (001) to study the band alignment at TiO 2 termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS 2 /TiO 2 interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS 2 monolayer when confined in a cubic environment of SrTiO 3 (STO). Adsorption analysis showed the chemisorption of MoS 2 on the surface of STO substrate with TiO 2 termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications.

Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Ziyao; Yang, Qu; Liu, Ming; Zhang, Zhiguo; Zhang, Xinyang; Sun, Dazhi; Nan, Tianxiang; Sun, Nianxiang; Chen, Xing

2015-04-01

Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE-ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60-70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice-spin, lattice-phonon, and lattice-charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

A comparison between space-time video descriptors

NASA Astrophysics Data System (ADS)

Costantini, Luca; Capodiferro, Licia; Neri, Alessandro

2013-02-01

The description of space-time patches is a fundamental task in many applications such as video retrieval or classification. Each space-time patch can be described by using a set of orthogonal functions that represent a subspace, for example a sphere or a cylinder, within the patch. In this work, our aim is to investigate the differences between the spherical descriptors and the cylindrical descriptors. In order to compute the descriptors, the 3D spherical and cylindrical Zernike polynomials are employed. This is important because both the functions are based on the same family of polynomials, and only the symmetry is different. Our experimental results show that the cylindrical descriptor outperforms the spherical descriptor. However, the performances of the two descriptors are similar.

Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn : CdS nanoflake/nanowire heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Weichang; Zhou, Yong; Peng, Yuehua; Zhang, Yong; Yin, Yanling; Tang, Dongsheng

2014-11-01

Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn : CdS nanoflake/nanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn : CdS or GaTe, the electrical measurement of GaTe/Sn : CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 A W-1 and (1.06-2.16) × 105%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the Ids-Vds curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn : CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn : CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.

Rational construction of multiple interfaces in ternary heterostructure for efficient spatial separation and transfer of photogenerated carriers in the application of photocatalytic hydrogen evolution

NASA Astrophysics Data System (ADS)

Shi, Jian-Wen; Ma, Dandan; Zou, Yajun; Fan, Zhaoyang; Shi, Jinwen; Cheng, Linhao; Ji, Xin; Niu, Chunming

2018-03-01

The design of efficient and stable photocatalyst plays a critical role in the photocatalytic hydrogen evolution from water splitting. Herein, we develop a novel ZnS/CdS/ZnO ternary heterostructure by the in-situ sulfuration of CdS/ZnO, which includes four contact interfaces: CdS-ZnS interface, ZnS-ZnO interface, CdS-ZnO interface and ZnS-CdS-ZnO ternary interface, forming three charge carrier-transfer modes (type-I, type-II and direct Z-scheme) through five carrier-transfer pathways. As a result, the separation and transfer of photoexcited electron-hole pairs are promoted significantly, resulting in a high hydrogen evolution rate of 44.70 mmol h-1 g-1, which is 2, 3.7 and 8 times higher than those of binary heterostructures, CdS/ZnO, CdS/ZnS and ZnS/ZnO, respectively, and 26.5, 280 and 298 times higher than those of single CdS, ZnO and ZnS, respectively. As a counterpart ternary heterostructure, CdS/ZnS/ZnO contains only two interfaces: CdS-ZnS interface and ZnS-ZnO interface, which form two charge carrier-transfer modes (type-I and type-II) through two carrier-transfer pathways, leading to its much lower hydrogen evolution rate (27.25 mmol h-1 g-1) than ZnS/CdS/ZnO ternary heterostructure. This work is relevant for understanding the charge-transfer pathways between multi-interfaces in multicomponent heterojunctions.

Understanding the interfacial properties of graphene-based materials/BiOI heterostructures by DFT calculations

NASA Astrophysics Data System (ADS)

Dai, Wen-Wu; Zhao, Zong-Yan

2017-06-01

Heterostructure constructing is a feasible and powerful strategy to enhance the performance of photocatalysts, because they can be tailored to have desirable photo-electronics properties and couple distinct advantageous of components. As a novel layered photocatalyst, the main drawback of BiOI is the low edge position of the conduction band. To address this problem, it is meaningful to find materials that possess suitable band gap, proper band edge position, and high mobility of carrier to combine with BiOI to form hetertrostructure. In this study, graphene-based materials (including: graphene, graphene oxide, and g-C3N4) were chosen as candidates to achieve this purpose. The charge transfer, interface interaction, and band offsets are focused on and analyzed in detail by DFT calculations. Results indicated that graphene-based materials and BiOI were in contact and formed van der Waals heterostructures. The valence and conduction band edge positions of graphene oxide, g-C3N4 and BiOI changed with the Fermi level and formed the standard type-II heterojunction. In addition, the overall analysis of charge density difference, Mulliken population, and band offsets indicated that the internal electric field is facilitate for the separation of photo-generated electron-hole pairs, which means these heterostructures can enhance the photocatalytic efficiency of BiOI. Thus, BiOI combines with 2D materials to construct heterostructure not only make use of the unique high electron mobility, but also can adjust the position of energy bands and promote the separation of photo-generated carriers, which provide useful hints for the applications in photocatalysis.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Nanowires, nanostructures and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2005-04-19

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Observation of Switchable Photoresponse of a Monolayer WSe2-MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging.

PubMed

Son, Youngwoo; Li, Ming-Yang; Cheng, Chia-Chin; Wei, Kung-Hwa; Liu, Pingwei; Wang, Qing Hua; Li, Lain-Jong; Strano, Michael S

2016-06-08

In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances have been made in exploring the exciting and useful properties of transition metal dichalcogenides (TMDCs), such as a permanent band gap in the visible range and the transition from indirect to direct band gap due to 2D quantum confinement, and their potential for a wide range of device applications. In particular, recent success in the synthesis of seamless monolayer lateral heterostructures of different TMDCs via chemical vapor deposition methods has provided an effective solution to producing an in-plane p-n junction, which is a critical component in electronic and optoelectronic device applications. However, spatial variation of the electronic and optoelectonic properties of the synthesized heterojunction crystals throughout the homogeneous as well as the lateral junction region and the charge carrier transport behavior at their nanoscale junctions with metals remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2-MoS2 lateral heterostructure. Current measurements in the dark in both forward and reverse bias reveal an opposite characteristic diode behavior for WSe2 and MoS2, owing to the formation of a Schottky barrier of dissimilar properties. Notably, by changing the polarity and magnitude of the tip voltage applied, pixels that show the photoresponse of the heterostructure are observed to be selectively switched on and off, allowing for the realization of a hyper-resolution array of the switchable photodiode pixels. This experimental approach has significant implications toward the development of novel optoelectronic technologies for regioselective photodetection and imaging at nanoscale resolutions. Comparative 2D Fourier analysis of physical height and current images shows high spatial frequency variations in substrate/MoS2 (or WSe2) contact that exceed the frequencies imposed by the underlying substrates. These results should provide important insights in the design and understanding of electronic and optoelectronic devices based on quantum confined atomically thin 2D lateral heterostructures.

Minimizing residues and strain in 2D materials transferred from PDMS.

PubMed

Jain, Achint; Bharadwaj, Palash; Heeg, Sebastian; Parzefall, Markus; Taniguchi, Takashi; Watanabe, Kenji; Novotny, Lukas

2018-06-29

Integrating layered two-dimensional (2D) materials into 3D heterostructures offers opportunities for novel material functionalities and applications in electronics and photonics. In order to build the highest quality heterostructures, it is crucial to preserve the cleanliness and morphology of 2D material surfaces that come in contact with polymers such as PDMS during transfer. Here we report that substantial residues and up to ∼0.22% compressive strain can be present in monolayer MoS 2 transferred using PDMS. We show that a UV-ozone pre-cleaning of the PDMS surface before exfoliation significantly reduces organic residues on transferred MoS 2 flakes. An additional 200 ◦ C vacuum anneal after transfer efficiently removes interfacial bubbles and wrinkles as well as accumulated strain, thereby restoring the surface morphology of transferred flakes to their native state. Our recipe is important for building clean heterostructures of 2D materials and increasing the reproducibility and reliability of devices based on them.

All-angle negative refraction of highly squeezed plasmon and phonon polaritons in graphene-boron nitride heterostructures.

PubMed

Lin, Xiao; Yang, Yi; Rivera, Nicholas; López, Josué J; Shen, Yichen; Kaminer, Ido; Chen, Hongsheng; Zhang, Baile; Joannopoulos, John D; Soljačić, Marin

2017-06-27

A fundamental building block for nanophotonics is the ability to achieve negative refraction of polaritons, because this could enable the demonstration of many unique nanoscale applications such as deep-subwavelength imaging, superlens, and novel guiding. However, to achieve negative refraction of highly squeezed polaritons, such as plasmon polaritons in graphene and phonon polaritons in boron nitride (BN) with their wavelengths squeezed by a factor over 100, requires the ability to flip the sign of their group velocity at will, which is challenging. Here we reveal that the strong coupling between plasmon and phonon polaritons in graphene-BN heterostructures can be used to flip the sign of the group velocity of the resulting hybrid (plasmon-phonon-polariton) modes. We predict all-angle negative refraction between plasmon and phonon polaritons and, even more surprisingly, between hybrid graphene plasmons and between hybrid phonon polaritons. Graphene-BN heterostructures thus provide a versatile platform for the design of nanometasurfaces and nanoimaging elements.

Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

PubMed

Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

2018-05-10

Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

Novel p-n heterojunction copper phosphide/cuprous oxide photocathode for solar hydrogen production.

PubMed

Chen, Ying-Chu; Chen, Zhong-Bo; Hsu, Yu-Kuei

2018-08-01

A Copper phosphide (Cu 3 P) micro-rod (MR) array, with coverage by an n-Cu 2 O thin layer by electrodeposition as a photocathode, has been directly fabricated on copper foil via simple electro-oxidation and phosphidation for photoelectrochemical (PEC) hydrogen production. The morphology, structure, and composition of the Cu 3 P/Cu 2 O heterostructure are systematically analyzed using a scanning electron microscope (SEM), X-ray diffraction and X-ray photoelectron spectra. The PEC measurements corroborate that the p-Cu 3 P/n-Cu 2 O heterostructural photocathode illustrates efficient charge separation and low charge transfer resistance to achieve the highest photocurrent of 430 μA cm -2 that is greater than other transition metal phosphide materials. In addition, a detailed energy diagram of the p-Cu 3 P/n-Cu 2 O heterostructure was investigated using Mott-Schottky analysis. Our study paves the way to explore phosphide-based materials in a new class for solar energy applications. Copyright © 2018 Elsevier Inc. All rights reserved.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

PubMed

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

PubMed Central

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-01-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

PubMed

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

NASA Astrophysics Data System (ADS)

Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

2018-03-01

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.

PubMed

Müller, Knut; Rosenauer, Andreas; Schowalter, Marco; Zweck, Josef; Fritz, Rafael; Volz, Kerstin

2012-10-01

This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very different as one is based on edge detection, one on rotational averages, and one on cross correlation with masks, it is found that identical strain profiles result for an In x Ga1-x N y As1-y /GaAs heterostructure consisting of five compressively and tensile strained layers. We achieve a precision of strain measurements of 7-9·10-4 and a spatial resolution of 0.5-0.7 nm over the whole width of the layer stack which was 350 nm. Being already very applicable to strain measurements in contemporary nanostructures, we additionally suggest future hardware and software designs optimized for fast and direct acquisition of strain distributions, motivated by the present studies.

All-angle negative refraction of highly squeezed plasmon and phonon polaritons in graphene–boron nitride heterostructures

PubMed Central

Lin, Xiao; Yang, Yi; Rivera, Nicholas; López, Josué J.; Shen, Yichen; Kaminer, Ido; Chen, Hongsheng; Zhang, Baile; Joannopoulos, John D.; Soljačić, Marin

2017-01-01

A fundamental building block for nanophotonics is the ability to achieve negative refraction of polaritons, because this could enable the demonstration of many unique nanoscale applications such as deep-subwavelength imaging, superlens, and novel guiding. However, to achieve negative refraction of highly squeezed polaritons, such as plasmon polaritons in graphene and phonon polaritons in boron nitride (BN) with their wavelengths squeezed by a factor over 100, requires the ability to flip the sign of their group velocity at will, which is challenging. Here we reveal that the strong coupling between plasmon and phonon polaritons in graphene–BN heterostructures can be used to flip the sign of the group velocity of the resulting hybrid (plasmon–phonon–polariton) modes. We predict all-angle negative refraction between plasmon and phonon polaritons and, even more surprisingly, between hybrid graphene plasmons and between hybrid phonon polaritons. Graphene–BN heterostructures thus provide a versatile platform for the design of nanometasurfaces and nanoimaging elements. PMID:28611222

Minimizing residues and strain in 2D materials transferred from PDMS

NASA Astrophysics Data System (ADS)

Jain, Achint; Bharadwaj, Palash; Heeg, Sebastian; Parzefall, Markus; Taniguchi, Takashi; Watanabe, Kenji; Novotny, Lukas

2018-06-01

Integrating layered two-dimensional (2D) materials into 3D heterostructures offers opportunities for novel material functionalities and applications in electronics and photonics. In order to build the highest quality heterostructures, it is crucial to preserve the cleanliness and morphology of 2D material surfaces that come in contact with polymers such as PDMS during transfer. Here we report that substantial residues and up to ∼0.22% compressive strain can be present in monolayer MoS2 transferred using PDMS. We show that a UV-ozone pre-cleaning of the PDMS surface before exfoliation significantly reduces organic residues on transferred MoS2 flakes. An additional 200 ◦C vacuum anneal after transfer efficiently removes interfacial bubbles and wrinkles as well as accumulated strain, thereby restoring the surface morphology of transferred flakes to their native state. Our recipe is important for building clean heterostructures of 2D materials and increasing the reproducibility and reliability of devices based on them.

A microwave cryogenic low-noise amplifier based on sige heterostructures

NASA Astrophysics Data System (ADS)

Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

2016-04-01

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ci, Penghong; Liu, Guoxi; Dong, Shuxiang, E-mail: sxdong@pku.edu.cn

We report a strain-mediated electric field manipulation of permittivity in BaTiO{sub 3} (barium titanate, BT) ceramic by a Pb(Zr,Ti)O{sub 3} (PZT) bimorph. This BT/PZT heterostructure exhibited a relatively large permittivity tunability of BT up to ±10% in a wide frequency range under an electric field of ±4 kV/cm applied to the PZT bimorph. The permittivity tunability is attributed to the strain in BT produced by the PZT bimorph. Calculations of the relationship between permittivity and applied electric field were developed, and corresponded well with measurements. The BT/PZT heterostructure has potential for applications in broadband field tunable smart electronic devices.

Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

PubMed

Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

2013-01-01

Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

Npn double heterostructure bipolar transistor with ingaasn base region

DOEpatents

Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

2004-07-20

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures.

PubMed

Yannopapas, Vassilios

2015-03-19

We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional electromagnetic response. In particular, we show that the use of scatterers with low refractive-index contrast favors the formation of unidirectional frequency gaps which is the optimal route for achieving unidirectional wave propagation.

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jandieri, K., E-mail: kakhaber.jandieri@physik.uni-marburg.de; Ludewig, P.; Wegele, T.

We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun [Orinda, CA; Shakouri, Ali [Santa Cruz, CA; Sands, Timothy D [Moraga, CA; Yang, Peidong [Berkeley, CA; Mao, Samuel S [Berkeley, CA; Russo, Richard E [Walnut Creek, CA; Feick, Henning [Kensington, CA; Weber, Eicke R [Oakland, CA; Kind, Hannes [Schaffhausen, CH; Huang, Michael [Los Angeles, CA; Yan, Haoquan [Albany, CA; Wu, Yiying [Albany, CA; Fan, Rong [El Cerrito, CA

2009-08-04

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanosturctures And Nanowires And Devices Fabricated Therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2006-02-07

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2010-11-16

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2018-01-30

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; McWhinney, Hylton G.; Shi Wenwu

2011-06-15

Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg.more » C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.« less

Molecular Beam Epitaxial Growth and Characterization of Graphene and Hexagonal Boron Nitride Two-Dimensional Layers

NASA Astrophysics Data System (ADS)

Zheng, Renjing

Van der Waals (vdW) materials (also called as two-dimensional (2D) material in some literature) systems have received extensive attention recently due to their potential applications in next-generation electronics platform. Exciting properties have been discovered in this field, however, the performance and properties of the systems rely on the materials' quality and interface significantly, leading to the urgent need for scalable synthesis of high-quality vdW crystals and heterostructures. Toward this direction, this dissertation is devoted on the study of Molecular Beam Epitaxy (MBE) growth and various characterization of vdW materials and heterostructures, especially graphene and hexagonal boron nitride (h-BN). The goal is to achieve high-quality vdW materials and related heterostructures. There are mainly four projects discussed in this dissertation. The first project (Chapter 2) is about MBE growth of large-area h-BN on copper foil. After the growth, the film was transferred onto SiO2 substrate for characterization. It is observed that as-grown film gives evident h-BN Raman spectrum; what's more, h-BN peak intensity and position is dependent on film thickness. N-1s and B-1s XPS peaks further suggest the formation of h-BN. AFM and SEM images show the film is flat and continuous over large area. Our synthesis method shows it's possible to use MBE to achieve h-BN growth and could also pave a way for some unique structure, such as h-BN/graphene heterostructures and doped h-BN films by MBE. The second project (Chapter 3) is focused on establishment of grapehene/h-BN heterostructure on cobalt (Co) film. In-situ epitaxial growth of graphene/h-BN heterostructures on Co film substrate was achieved by using plasma-assisted MBE. The direct graphene/h-BN vertical stacking structures were demonstrated and further confirmed by various characterizations, such as Raman spectroscopy, SEM, XPS and TEM. Large area heterostructures consisting of single- /bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1º. The third project (Chapter 4) is about graphene growth on Fe by MBE at low temperature. Temperature-dependent growth of graphene on Fe using MBE is studied. Two-dimensional (2D), large-area graphene samples were grown on Fe thin films, and characterized by Raman, X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy, transmission electron microscopy and atomic force microscopy. Graphene is achieved on Fe at a wide growth temperature range and as low as 400 °C. The growth mechanism is studied and shows graphene growth is associated with formation and decomposition of iron carbide. The forth part is about a convenient way to produce vdW heterostructures: graphene growth of exfoliated h-BN on Co. We demonstrated graphene/h-BN heterostructures by growing graphene onto the substrates which consist of exfoliated h-BN on Co thin film using MBE. The heterostructure samples grown at different temperatures and growth durations were characterized by Raman, optical microscopy, atomic force microscopy, microwave impedance microscopy and scanning tunneling microscopy. It is found that the graphene/h-BN heterostructures were formed by the formation of graphene underneath rather than on top of the h-BN flakes. The growth mechanism is discussed. In summary, we develop and optimize growth of vdW materials (h-BN and graphene), and vdW heterostructures by MBE. Various characterization has been carried out to evaluate properties of the films in structural, optical and electrical aspects. Our results reveal that MBE can provide an excellent alternative way for reliable growth of high-quality and large-size vdW materials and related heterostructures, which will attract more attention for the utilization of MBE in vdW materials research.

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

The Bach equations in spin-coefficient form

NASA Astrophysics Data System (ADS)

Forbes, Hamish

2018-06-01

Conformal gravity theories are defined by field equations that determine only the conformal structure of the spacetime manifold. The Bach equations represent an early example of such a theory, we present them here in component form in terms of spin- and boost-weighted spin-coefficients using the compacted spin-coefficient formalism. These equations can be used as an efficient alternative to the standard tensor form. As a simple application we solve the Bach equations for pp-wave and static spherically symmetric spacetimes.

Unified space--time trigonometry and its applications to relativistic kinematics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaccarini, A.

1973-06-15

A geometrical approach to relativistic kinematics is presented. Owing to a unified space-time trigonometry, the spherical trigonometry formalism may be used to describe and study the kinematics of any collision process. Lorentz transformations may thus lie treated as purely geometrical problems. A different way to define a unified trigonometry is also proposed, which is based on the spinor representation of the Lorentz group. This leads to a different and more general formalism than the former one. (auth)

High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

PubMed

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-03-01

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature ferroelectricity in CuInP 2S 6 ultrathin flakes

DOE PAGES

Liu, Fucai; You, Lu; Seyler, Kyle L.; ...

2016-08-11

In this study, two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP 2S 6 (CIPS) with a transition temperature of ~320 K. Switchable polarization is observed in thin CIPS of ~4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio ofmore » ~100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.« less

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

PubMed Central

Liu, Fucai; You, Lu; Seyler, Kyle L.; Li, Xiaobao; Yu, Peng; Lin, Junhao; Wang, Xuewen; Zhou, Jiadong; Wang, Hong; He, Haiyong; Pantelides, Sokrates T.; Zhou, Wu; Sharma, Pradeep; Xu, Xiaodong; Ajayan, Pulickel M.; Wang, Junling; Liu, Zheng

2016-01-01

Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity. PMID:27510418

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

NASA Astrophysics Data System (ADS)

Liu, Fucai; You, Lu; Seyler, Kyle L.; Li, Xiaobao; Yu, Peng; Lin, Junhao; Wang, Xuewen; Zhou, Jiadong; Wang, Hong; He, Haiyong; Pantelides, Sokrates T.; Zhou, Wu; Sharma, Pradeep; Xu, Xiaodong; Ajayan, Pulickel M.; Wang, Junling; Liu, Zheng

2016-08-01

Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ~320 K. Switchable polarization is observed in thin CIPS of ~4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ~100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.

PubMed

Liu, Fucai; You, Lu; Seyler, Kyle L; Li, Xiaobao; Yu, Peng; Lin, Junhao; Wang, Xuewen; Zhou, Jiadong; Wang, Hong; He, Haiyong; Pantelides, Sokrates T; Zhou, Wu; Sharma, Pradeep; Xu, Xiaodong; Ajayan, Pulickel M; Wang, Junling; Liu, Zheng

2016-08-11

Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

A review on applications of magnetoelectric composites: from heterostructural uncooled magnetic sensors, energy harvesters to highly efficient power converters

NASA Astrophysics Data System (ADS)

Leung, Chung Ming; Li, Jiefang; Viehland, D.; Zhuang, X.

2018-07-01

Over the past two decades, magnetoelectric (ME) composites and their devices have been an important topic of research. Potential applications ranging from low-power sensing to high-power converters have been investigated. This review, first begins with a summary of multiferroic materials that work at room temperature. Such ME materials are usually in composites, and their ME effect generated as a product property of magnetostrictive and piezoelectric composite layers. After that, mechanisms, working principles, and applications of ME composites from heterostructural uncooled magnetic sensors, energy harvesters to highly efficient power converters will be discussed. First, the development of ME sensors in terms of materials and structures to enhance their sensitivities and to reduce noise level is reviewed and discussed. Second, the structure of ME-based energy harvesters is discussed and summarized. Third, the development of ME gyrators is summarized for power applications, including current/voltage conversion, power efficiency, power density and figures of merit. Results demonstrate that our ME gyrator has the ability to satisfy the needs of power conversion with superior efficiency (>90%), offering potential uses in power electronic applications.

Extracting Hydrologic Understanding from the Unique Space-time Sampling of the Surface Water and Ocean Topography (SWOT) Mission

NASA Astrophysics Data System (ADS)

Nickles, C.; Zhao, Y.; Beighley, E.; Durand, M. T.; David, C. H.; Lee, H.

2017-12-01

The Surface Water and Ocean Topography (SWOT) satellite mission is jointly developed by NASA, the French space agency (CNES), with participation from the Canadian and UK space agencies to serve both the hydrology and oceanography communities. The SWOT mission will sample global surface water extents and elevations (lakes/reservoirs, rivers, estuaries, oceans, sea and land ice) at a finer spatial resolution than is currently possible enabling hydrologic discovery, model advancements and new applications that are not currently possible or likely even conceivable. Although the mission will provide global cover, analysis and interpolation of the data generated from the irregular space/time sampling represents a significant challenge. In this study, we explore the applicability of the unique space/time sampling for understanding river discharge dynamics throughout the Ohio River Basin. River network topology, SWOT sampling (i.e., orbit and identified SWOT river reaches) and spatial interpolation concepts are used to quantify the fraction of effective sampling of river reaches each day of the three-year mission. Streamflow statistics for SWOT generated river discharge time series are compared to continuous daily river discharge series. Relationships are presented to transform SWOT generated streamflow statistics to equivalent continuous daily discharge time series statistics intended to support hydrologic applications using low-flow and annual flow duration statistics.

Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw; Lupina, L.

2014-08-28

Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. Asmore » revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.« less

Photocatalysis-Based Nanoprobes Using Noble Metal-Semiconductor Heterostructure for Visible Light-Driven in Vivo Detection of Mercury.

PubMed

Zhi, Lihua; Zeng, Xiaofan; Wang, Hao; Hai, Jun; Yang, Xiangliang; Wang, Baodui; Zhu, Yanhong

2017-07-18

The development of sensitive and reliable methods to monitor the presence of mercuric ions in cells and organisms is of great importance to biological research and biomedical applications. In this work, we propose a strategy to construct a solar-driven nanoprobe using a 3D Au@MoS 2 heterostructure as a photocatalyst and rhodamine B (RB) as a fluorescent and color change reporter molecule for monitoring Hg 2+ in living cells and animals. The sensing mechanism is based on the photoinduced electron formation of gold amalgam in the 3D Au@MoS 2 heterostructure under visible light illumination. This formation is able to remarkably inhibit the photocatalytic activity of the heterostructure toward RB decomposition. As a result, "OFF-ON" fluorescence and color change are produced. Such characteristics enable this new sensing platform to sensitively and selectively detect Hg 2+ in water by fluorescence and colorimetric methods. The detection limits of the fluorescence assay and colorimetric assay are 0.22 and 0.038 nM for Hg 2+ , respectively; these values are well below the acceptable limits in drinking water standards (10 nM). For the first time, such photocatalysis-based sensing platform is successfully used to monitor Hg 2+ in live cells and mice. Our work therefore opens a promising photocatalysis-based analysis methodology for highly sensitive and selective in vivo Hg 2+ bioimaging studies.

Tailored Assembly of 2D Heterostructures beyond Graphene

DTIC Science & Technology

2017-05-11

liquid crystal and catalyst application. Another important approach we have explored during this project is the solution phase assembly of two...graphene oxide, and its potential functionalities in liquid crystal and catalyst application. Another important approach we have explored during...exfoliation, liquid phase exfoliation, and chemical vapor deposition, and opened up new opportunities to graphene based platform for novel

Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS 2 on Graphene for Enhanced Photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Weili; Xu, Shanshan S.; Yan, Bo

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS 2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficientlymore » hop to the 1T'-MoS 2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS 2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS 2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS 2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.« less

A review on III-V core-multishell nanowires: growth, properties, and applications

NASA Astrophysics Data System (ADS)

Royo, Miquel; De Luca, Marta; Rurali, Riccardo; Zardo, Ilaria

2017-04-01

This review focuses on the emerging field of core-multishell (CMS) semiconductor nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a template for the coaxial growth of two or more layers wrapped around it. Thanks to the peculiar geometry, the strain is partially released along the radial direction, thus allowing the creation of fascinating heterostructures, even based on lattice mismatched materials that would hardly grow in a planar geometry. Enabling the unique bridging of the 1D nature of NWs with the exciting properties of 2D heterostructures, these novel systems are becoming attractive for material science, as well as fundamental and applied physics. We will focus on NWs made of III-V and III-V-based alloys as they represent a model system in which present growth techniques have reached a high degree of control on the material structural properties, and many physical properties have been assessed, from both the theoretical and experimental points of view. In particular, we provide an overview on the growth methods and structural properties of CMS NWs, on the modulation doping mechanisms enabled by these heterostructures, on the effects of a magnetic field, and on the phononic and optical properties typical of CMS NWs. Moreover, we review the main technological applications based on these systems, such as optoelectronic and photovoltaic devices.

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

PubMed

Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

2016-05-05

Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS 2 on Graphene for Enhanced Photoresponse

DOE PAGES

Cui, Weili; Xu, Shanshan S.; Yan, Bo; ...

2017-05-11

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS 2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficientlymore » hop to the 1T'-MoS 2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS 2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS 2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS 2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.« less

Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors

NASA Astrophysics Data System (ADS)

Özçelik, V. Ongun; Fathi, Mohammad; Azadani, Javad G.; Low, Tony

2018-05-01

Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wave functions of the conduction and valence band edges are delocalized across the heterostructure. The resultant band gaps of the heterostructures reside in the infrared region. With strain engineering, the heterostructure band gap undergoes a transition from indirect to direct in the puckered phase. Our results show that there is a direct correlation between the electronic wave function and the mechanical rigidity of the layered heterostructure.

Fabrication of lateral lattice-polarity-inverted GaN heterostructure

NASA Astrophysics Data System (ADS)

Katayama, Ryuji; Kuge, Yoshihiro; Kondo, Takashi; Onabe, Kentaro

2007-04-01

Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems

NASA Astrophysics Data System (ADS)

Zappe, Hans P.; Jantz, Wolfgang

1990-12-01

The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.

Resonance of magnetization excited by voltage in magnetoelectric heterostructures

NASA Astrophysics Data System (ADS)

Yu, Guoliang; Zhang, Huaiwu; Li, Yuanxun; Li, Jie; Zhang, Dainan; Sun, Nian

2018-04-01

Manipulation of magnetization dynamics is critical for spin-based devices. Voltage driven magnetization resonance is promising for realizing low-power information processing systems. Here, we show through Finite Element Method (FEM) simulations that magnetization resonance in nanoscale magnetic elements can be generated by a radio frequency (rf) voltage via the converse magnetoelectric (ME) effect. The magnetization dynamics induced by voltage in a ME heterostructures is simulated by taking into account the magnetoelastic and piezoelectric coupling mechanisms among magnetization, strain and voltage. The frequency of the excited magnetization resonance is equal to the driving rf voltage frequency. The proposed voltage driven magnetization resonance excitation mechanism opens a way toward energy-efficient spin based device applications.

The Fano-type transmission and field enhancement in heterostructures composed of epsilon-near-zero materials and truncated photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zhi-fang; Jiang, Hai-tao, E-mail: davies2000@163.com, E-mail: jiang-haitao@tongji.edu.cn; Li, Yun-hui

2013-11-11

The Fano-type interference effect is studied in the heterostructure composed of an epsilon-near-zero (ENZ) material and a truncated photonic crystal for transverse magnetic polarized light. In the Fano-type interference effect, the ENZ material provides narrow reflection pathway and the photonic crystal provides broadband reflection pathway. The boundary condition across the ENZ interface and the confinement effect provided by the photonic crystal can enhance the electric fields in the ENZ material greatly. The field enhancements, together with the asymmetric property of Fano-type spectrum, possess potential applications for significantly lowering the threshold of nonlinear processes such as optical switching and bistability.

Removal of GaAs growth substrates from II-VI semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

2014-04-01

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors.

PubMed

Campbell, Philip M; Tarasov, Alexey; Joiner, Corey A; Ready, William J; Vogel, Eric M

2015-05-26

Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. However, most attempts to demonstrate resonant tunneling devices, including graphene-insulator-graphene structures, have resulted in low peak-to-valley ratios, limiting their application. We theoretically demonstrate that vertical heterostructures consisting of two identical monolayer 2D transition-metal dichalcogenide semiconductor electrodes and a hexagonal boron nitride barrier result in a peak-to-valley ratio several orders of magnitude higher than the best that can be achieved using graphene electrodes. The peak-to-valley ratio is large even at coherence lengths on the order of a few nanometers, making these devices appealing for nanoscale electronics.

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

1993-01-01

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asokakumar, P.P.V.; Lynn, K.G.

1993-04-06

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO[sub 2]/Si, MOS or other semiconductor devices.

Scalable Synthesis of Graphene Based Heterostructures and Their Use in Energy Sensing, Conversion and Storage

NASA Astrophysics Data System (ADS)

Bhimanapati, Ganesh Rahul

2D materials are a unique class of materials system which has spread across the entire spectrum of materials including semi-metallic graphene to insulating boron nitride. Since graphene there has been many other 2D material systems (such as boron nitride (hBN), transition metal dichalcogenides (TMDs)) that provide a wider array of unique chemistries and properties to explore for applications specifically in optoelectronics, mechanical and energy applications. Specifically tailored heterostructures can be made which can retain the character of single-atom thick sheets while having an entirely different optical and mechanical properties compared to the parent materials. In the current work, heterostructures based on graphene, hBN and TMDs have been made, which were used to study the fundamental process-property relations and their use in energy conversion and storage have been studied. The first part of this dissertation focuses on scalable approach for liquid phase exfoliation of graphene oxide (GO) and hBN (Chapter 2). The current work successfully shows an exfoliation efficiency of 25% monolayer material for hBN, which was not previously achieved. These exfoliated materials were further mixed in the liquid environment to form a new heterostructure BCON (Chapter 3). This newly formed heterostructure was studied in detail for its process-property relations. At pH 4-8, BCON was highly stable and can be dried to form paper or ribbon like material. New bonds were observed in BCON which could be linked to the GO linkage at the nitrogen sites of the hBN. This free standing BCON was tested under various radiation sources like x-rays, alpha, beta, gamma sources and heavy ion like Ar particles and was found that it is very robust to radiation (Chapter 5). By understanding the chemistry, stability and properties of these materials, this could lay a foundation in using these materials for integration in conductive and insulating ink development, polymer composite development to improve the thermal and mechanical properties. Another major focus of this dissertation work is combining TMDs and graphene for energy applications specifically hydrogen evolution reactions (HERs) and Lithium ion batteries (LiBs). TMD's specifically MoS2 and WSe2 were grown on graphite paper using powder vaporization and metal organic chemical vapor deposition (MOCVD) (Chapter 4). Control over the architecture of the MoS2 and WSe2 was achieved by varying the precursor concentration and pressure, which was observed by using scanning electron microscopy. These samples were further characterized using cross-sectional transmission electron microscopy, x-ray photoelectron spectroscopy and Raman microscopy confirming the high quality of the material that was grown. The MoS2/graphite flowers were tested for hydrogen evolution reactions and were found that they are highly active for catalysis and by modifying the surface using simple UV-Ozone treatments, this activity can be increased by 4x (reducing the Tafel slope from 185 to 54 mV/Dec). Similar performance was observed for WSe2/Graphite heterostructure where the tiny 100 nm vertical flakes on graphite paper showed one of the lowest reported Tafel slope of 64 mV/Dec (Chapter 6). MoS2/Graphite was further tested for lithium ion batteries and was found that it had a higher cyclic capacity of 750 mV/Dec. This enhanced stability and performance for energy applications was achieved because of the direct growth technique on graphite. Hence this technique could be used as a scalable alternative to make anodes for lithium ion batteries.

Nonergodic property of the space-time coupled CTRW: Dependence on the long-tailed property and correlation

NASA Astrophysics Data System (ADS)

Liu, Jian; Li, Baohe; Chen, Xiaosong

2018-02-01

The space-time coupled continuous time random walk model is a stochastic framework of anomalous diffusion with many applications in physics, geology and biology. In this manuscript the time averaged mean squared displacement and nonergodic property of a space-time coupled continuous time random walk model is studied, which is a prototype of the coupled continuous time random walk presented and researched intensively with various methods. The results in the present manuscript show that the time averaged mean squared displacements increase linearly with lag time which means ergodicity breaking occurs, besides, we find that the diffusion coefficient is intrinsically random which shows both aging and enhancement, the analysis indicates that the either aging or enhancement phenomena are determined by the competition between the correlation exponent γ and the waiting time's long-tailed index α.

Theory of negative refraction in periodic stratified metamaterials.

PubMed

Rukhlenko, Ivan D; Premaratne, Malin; Agrawal, Govind P

2010-12-20

We present a general theory of negative refraction in periodic stratified heterostructures with an arbitrary number of homogeneous, isotropic, nonmagnetic layers in a unit cell. With a 4×4-matrix technique, we derive analytic expressions for the normal modes of such a heterostructure slab, introduce the average refraction angles of the energy flow and wavevector for the TE- and TM-polarized plane waves falling obliquely on the slab, and derive expressions for the reflectivity and transmissivity of the whole slab. For a specific case, in which all layers in a unit cell are much thinner than the wavelength of light, we obtain approximate simple formulae for the effective refraction angles. Using the example of a semiconductor heterostructure slab with two layers in a unit cell, we demonstrate that ultrathin layers are preferable for metamaterial applications because they enable higher transmissivity within the frequency band of negative refraction. Our theory can be used to study the optical properties of any stratified metamaterial, irrespective of whether semiconductors or metals are employed for fabricating its various layers, because it includes absorption within each layer.

Effects of complexing agents on electrochemical deposition of FeS x O y in ZnO/FeS x O y heterostructures

NASA Astrophysics Data System (ADS)

Supee, A.; Ichimura, M.

2017-12-01

Heterostructures which consist of ZnO and FeS x O y were deposited via electrochemical deposition (ECD) for application to solar cells. Galvanostatic ECD was used in FeS x O y deposition with a solution containing 100 mM Na2S2O3 and 30 mM FeSO4. To alter the film properties, L(+)-tartaric acid (C4H6O6) and lactic acid [CH3CH(OH)COOH] were introduced as the complexing agents into the FeS x O y deposition solution. Larger film thickness and smaller oxygen content were obtained for the films deposited with the complexing agents. ZnO was deposited on FeS x O y by two-step pulse ECD from a solution containing Zn(NO3)2. For the ZnO/FeS x O y heterostructures fabricated with/without complexing agents, rectifying properties were confirmed in the current density-voltage ( J- V) characteristics. However, photovoltaic properties were not improved with addition of both complexing agents.

Interfacial magnetic coupling in hetero-structure of Fe/double-perovskite NdBaMn2O6 single crystal

NASA Astrophysics Data System (ADS)

Lin, W. C.; Tsai, C. L.; Ogawa, K.; Yamada, S.; Gandhi, Ashish C.; Lin, J. G.

2018-04-01

The interfacial magnetic coupling between metallic Fe and the double-perovskite NdBaMn2O6 single crystal was investigated in the heterostructure of 4-nm Pd/10-nm Fe/NdBaMn2O6. A considerable magnetic coupling effect was observed in the temperature range coincident with the magnetic phase transition of NdBaMn2O6. When the temperature was elevated above 270 K, NdBaMn2O6 transformed from a state of antiferromagnetic fluctuating domains to a superparamagnetism-like (ferromagnetic fluctuation) state with high magnetic susceptibility. Concurrently, the interfacial magnetic coupling between the Fe layer and the NdBaMn2O6 crystal was observed, as indicated by the considerable squareness reduction and coercivity enhancement in the Fe layer. Moreover, the presence of the Fe layer changed the magnetic structure of NdBaMn2O6 from conventional 4-fold symmetry to 2-fold symmetry. These observations offer applicable insights into the mutual magnetic interaction in the heterostructures of metallic ferromagnetism/perovskite materials.

Interfacial exchange coupling and magnetization reversal in perpendicular [Co/Ni]N/TbCo composite structures.

PubMed

Tang, M H; Zhang, Zongzhi; Tian, S Y; Wang, J; Ma, B; Jin, Q Y

2015-06-15

Interfacial exchange coupling and magnetization reversal characteristics in the perpendicular heterostructures consisting of an amorphous ferrimagnetic (FI) TbxCo(100-x) alloy layer exchange-coupled with a ferromagnetic (FM) [Co/Ni]N multilayer have been investigated. As compared with pure TbxCo(100-x) alloy, the magnetization compensation composition of the heterostructures shift to a higher Tb content, implying Co/Ni also serves to compensate the Tb moment in TbCo layer. The net magnetization switching field Hc⊥ and interlayer interfacial coupling field Hex, are not only sensitive to the magnetization and thickness of the switched TbxCo(100-x) or [Co/Ni]N layer, but also to the perpendicular magnetic anisotropy strength of the pinning layer. By tuning the layer structure we achieve simultaneously both large Hc⊥ = 1.31 T and Hex = 2.19 T. These results, in addition to the fundamental interest, are important to understanding of the interfacial coupling interaction in the FM/FI heterostructures, which could offer the guiding of potential applications in heat-assisted magnetic recording or all-optical switching recording technique.

MAPLE prepared heterostructures with oligoazomethine: Fullerene derivative mixed layer for photovoltaic applications

NASA Astrophysics Data System (ADS)

Stanculescu, A.; Rasoga, O.; Socol, M.; Vacareanu, L.; Grigoras, M.; Socol, G.; Stanculescu, F.; Breazu, C.; Matei, E.; Preda, N.; Girtan, M.

2017-09-01

Mixed layers of azomethine oligomers containing 2,5-diamino-3,4-dicyanothiophene as central unit and triphenylamine (LV5) or carbazol (LV4) at both ends as donor and fullerene derivative, [6,6]-phenyl-C61 butyric acid butyl ester ([C60]PCB-C4) as acceptor, have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) on glass/ITO and Si substrates. The effect of weight ratio between donor and acceptor (1:1; 1:2) and solvent type (chloroform, dimethylsulphoxide) on the optical (UV-vis transmission/absorption, photoluminescence) and morphological properties of LV4 (LV5): [C60]PCB-C4 mixed layers has been evidenced. Dark and under illumination I-V characteristics of the heterostructures realized with these mixed layers sandwiched between ITO and Al electrodes have revealed a solar cell behavior for the heterostructures prepared with both LV4 and LV5 using chloroform as matrix solvent. The solar cell structure realized with oligomer LV5, glass/ITO/LV5: [C60]PCB-C4 (1:1) has shown the best parameters.

High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

PubMed

Jia, Chuancheng; Ma, Wei; Gu, Chunhui; Chen, Hongliang; Yu, Haomiao; Li, Xinxi; Zhang, Fan; Gu, Lin; Xia, Andong; Hou, Xiaoyuan; Meng, Sheng; Guo, Xuefeng

2016-06-08

A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.

Computational nanoelectronics towards: design, analysis, synthesis, and fundamental limits

NASA Technical Reports Server (NTRS)

Klimeck, G.

2003-01-01

This seminar will review the development of a comprehensive nanoelectronic modeling tool (NEMO 1-D and NEMO 3-D) and its application to high-speed electronics (resonant tunneling diodes) and IR detectors and lasers (quantum dots and 1-D heterostructures).

Design of lateral heterostructure from arsenene and antimonene

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

2016-09-01

Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

2018-06-25

Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

Coupling gravity, electromagnetism and space-time for space propulsion breakthroughs

NASA Technical Reports Server (NTRS)

Millis, Marc G.

1994-01-01

spaceflight would be revolutionized if it were possible to propel a spacecraft without rockets using the coupling between gravity, electromagnetism, and space-time (hence called 'space coupling propulsion'). New theories and observations about the properties of space are emerging which offer new approaches to consider this breakthrough possibility. To guide the search, evaluation, and application of these emerging possibilities, a variety of hypothetical space coupling propulsion mechanisms are presented to highlight the issues that would have to be satisfied to enable such breakthroughs. A brief introduction of the emerging opportunities is also presented.

Space-time latent component modeling of geo-referenced health data.

PubMed

Lawson, Andrew B; Song, Hae-Ryoung; Cai, Bo; Hossain, Md Monir; Huang, Kun

2010-08-30

Latent structure models have been proposed in many applications. For space-time health data it is often important to be able to find the underlying trends in time, which are supported by subsets of small areas. Latent structure modeling is one such approach to this analysis. This paper presents a mixture-based approach that can be applied to component selection. The analysis of a Georgia ambulatory asthma county-level data set is presented and a simulation-based evaluation is made. Copyright (c) 2010 John Wiley & Sons, Ltd.

Dark matter and weak signals of quantum spacetime

NASA Astrophysics Data System (ADS)

Doplicher, Sergio; Fredenhagen, Klaus; Morsella, Gerardo; Pinamonti, Nicola

2017-03-01

In physically motivated models of quantum spacetime, a U (1 ) gauge theory turns into a U (∞ ) gauge theory; hence, free classical electrodynamics is no longer free and neutral fields may have electromagnetic interactions. We discuss the last point for scalar fields, as a way to possibly describe dark matter; we have in mind the gravitational collapse of binary systems or future applications to self-gravitating Bose-Einstein condensates as possible sources of evidence of quantum gravitational phenomena. The effects considered so far, however, seem too faint to be detectable at present.

Analogue Transformations in Physics and their Application to Acoustics

PubMed Central

García-Meca, C.; Carloni, S.; Barceló, C.; Jannes, G.; Sánchez-Dehesa, J.; Martínez, A.

2013-01-01

Transformation optics has shaped up a revolutionary electromagnetic design paradigm, enabling scientists to build astonishing devices such as invisibility cloaks. Unfortunately, the application of transformation techniques to other branches of physics is often constrained by the structure of the field equations. We develop here a complete transformation method using the idea of analogue spacetimes. The method is general and could be considered as a new paradigm for controlling waves in different branches of physics, from acoustics in quantum fluids to graphene electronics. As an application, we derive an “analogue transformation acoustics” formalism that naturally allows the use of transformations mixing space and time or involving moving fluids, both of which were impossible with the standard approach. To demonstrate the power of our method, we give explicit designs of a dynamic compressor, a spacetime cloak for acoustic waves and a carpet cloak for a moving aircraft. PMID:23774575

Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

2017-03-01

Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

A Proof of Friedman's Ergosphere Instability for Scalar Waves

NASA Astrophysics Data System (ADS)

Moschidis, Georgios

2018-03-01

Let {(M^{3+1},g)} be a real analytic, stationary and asymptotically flat spacetime with a non-empty ergoregion E and no future event horizon H}^{+. In Friedman (Commun Math Phys 63(3):243-255, 1978), Friedman observed that, on such spacetimes, there exist solutions φ to the wave equation \\squaregφ=0 such that their local energy does not decay to 0 as time increases. In addition, Friedman provided a heuristic argument that the energy of such solutions actually grows to +∞. In this paper, we provide a rigorous proof of Friedman's instability. Our setting is, in fact, more general. We consider smooth spacetimes {(M^{d+1},g)}, for any {d≥2}, not necessarily globally real analytic. We impose only a unique continuation condition for the wave equation across the boundary partial{E} of E on a small neighborhood of a point p\\inpartialE. This condition always holds if {(M,g)} is analytic in that neighborhood of p, but it can also be inferred in the case when {(M,g)} possesses a second Killing field {Φ} such that the span of {Φ} and the stationary Killing field T is timelike on partial{E}. We also allow the spacetimes {(M,g)} under consideration to possess a (possibly empty) future event horizon H}^{+, such that, however, {H+\\cap E=\\emptyset} (excluding, thus, the Kerr exterior family). As an application of our theorem, we infer an instability result for the acoustical wave equation on the hydrodynamic vortex, a phenomenon first investigated numerically by Oliveira et al. in (Phys Rev D 89(12):124008, 2014). Furthermore, as a side benefit of our proof, we provide a derivation, based entirely on the vector field method, of a Carleman-type estimate on the exterior of the ergoregion for a general class of stationary and asymptotically flat spacetimes. Applications of this estimate include a Morawetz-type bound for solutions φ of \\squaregφ=0 with frequency support bounded away from {{ω}=0} and {{ω}=±∞}.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Preface: Heterostructure terahertz devices

NASA Astrophysics Data System (ADS)

Ryzhii, Victor

2008-08-01

The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which appear to be feasible for the realization of novel THz devices are put forward and discussed in this collection of experimental and theoretical papers. The issue starts with a paper by Akis et al which deals with a theoretical study of the operation of high electron mobility transistors at THz frequencies. For this, the authors use the numerical simulations using a full-band, cellular Monte Carlo transport model coupled to a full Poisson equation solver. The next three papers by Reklaitis, Balocco et al , and Mikhailov and Zieglel are devoted to considering new ideas related to frequency multiplication which can lead to the up-conversion of ac signals to THz frequencies. For this purpose, different concepts of the devices based on nontrivial heterostructures and materials are proposed and studied. The paper by Knap et al provides an overview of the authors experimental results on the plasma effects infield effect transistors. These effects can be used for the resonant detection of THz radiation and its emission. The observed THz emission from more complex device structures, namely, dual grating gate heterostrucures, which is attributed to the self-excitation of plasma waves, is discussed by Otsuji and his co-workers. The following two papers (by Ryzhii et al and Popov et al) deal with the development of device models and using the one which could explain the results of experimental observations described in the paper by Otsuji et al . In both these papers, the mechanisms of plasma wave instability in spatially periodic heterostructures are analyzed. In the paper by Starikov and his colleagues, an idea to utilize the transit-time resonance assisted by optical phonon emissionis revived and revisited. As demonstrated, this mechanism in the electron system in nitride-made heterostructures can lead to negative dynamic conductivity in the THz range of frequencies and, hence, be used for the generation of THz radiation. In the paper by Millithaler et al, Monte Carlo simulations are used to study the voltage fluctuationsaffected by the plasma oscillations in two-terminal heterostructures with an n-type InGaAs channel.Finally, the paper by Liu {\\it et al} is devoted to the concept of quantum cascade THz lasers using resonant tunneling in quantum dot systems instead of the standard multiple quantum well heterostructures.I would like to express my deep gratitude to all of the authors for having submitted high-quality papers. I am confident that this special issue will substantially promote further progress in THz technology.

Synthesis of nanowire bundle-like WO3-W18O49 heterostructures for highly sensitive NH3 sensor application.

PubMed

Xiong, Ya; Zhu, Zongye; Guo, Tianchao; Li, Hui; Xue, Qingzhong

2018-04-14

Heterojunctions are very promising structures due to their hybrid properties, which are usually obtained via a multistep growth process. However, in this paper, WO 3 -W 18 O 49 heterostructures are synthesized via a novel one-step approach by using isopropanol as reaction media and are applied in NH 3 gas detection for the first time. The obtained WO 3 -W 18 O 49 heterostructures with loose nanowire bundle-like morphology show a response value of 23.3 toward 500 ppm NH 3 at 250 °C, which is 5.63 times higher than that of pristine W 18 O 49 . In addition, the WO 3 -W 18 O 49 sensor also exhibits great dynamic response/recovery characteristics (13 s/49 s @ 500 ppm NH 3 ), superb selectivity and low detection limit of 460 ppb. The substantial improvement in the response of WO 3 -W 18 O 49 heterostructures toward NH 3 can be explained by the formation of n-WO 3 /n-W 18 O 49 heterojunctions that facilitate the generation of a more extended depletion layer as well as the enhancement of specific surface area and pore volume. Our research results open an easy pathway for facile one-step preparation of heterojunctions with high response and low cost, which can be used for the development of other high-performance gas sensors. Copyright © 2018 Elsevier B.V. All rights reserved.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

PubMed

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

CeO2 /Bi2 WO6 Heterostructured Microsphere with Excellent Visible-light-driven Photocatalytic Performance for Degradation of Tetracycline Hydrochloride.

PubMed

Zhang, Fengjun; Zou, Shuang; Wang, Tianye; Shi, Yuxi; Liu, Peng

2017-10-01

CeO 2 /Bi 2 WO 6 heterostructured microsphere with excellent and stable photocatalytic activity for degradation tetracyclines was successfully synthesized via a facile solvothermal route. The photocatalytic experiments indicated that CeO 2 /Bi 2 WO 6 heterostructured microspheres exhibited enhanced photocatalytic activity compared to pure Bi 2 WO 6 in both the degradation of tetracycline hydrochloride (TCH) and rhodamine B (RhB) under visible-light irradiation. The 1CeO 2 /2Bi 2 WO 6 exhibited the best photocatalytic activity for degradation of TCH, reaching 91% after 60 min reaction. The results suggested that the particular morphological conformation of the microspheres resulted in smaller size and more uniform morphology so as to increase the specific surface area. Meanwhile, the heterojunction was formed by coupling CeO 2 and Bi 2 WO 6 in the as-prepared microspheres, so that the separation efficiency of photogenerated electrons and holes was dramatically improved and the lifetimes of charge carriers were prolonged. Hence, introduction of CeO 2 could significantly enhance the photocatalytic activity of CeO 2 /Bi 2 WO 6 heterostructured microspheres and facilitate the degradation of TCH. This work provided not only a principle method to synthesize CeO 2 /Bi 2 WO 6 with the excellent photocatalytic performance for actual produce, but also a excellent property of the photocatalyst for potential application in photocatalytic treatment of tetracyclines wastewater from pharmaceutical factory. © 2017 The American Society of Photobiology.

Synthesis of scaly Sn3O4/TiO2 nanobelt heterostructures for enhanced UV-visible light photocatalytic activity

NASA Astrophysics Data System (ADS)

Chen, Guohui; Ji, Shaozheng; Sang, Yuanhua; Chang, Sujie; Wang, Yana; Hao, Pin; Claverie, Jerome; Liu, Hong; Yu, Guangwei

2015-02-01

A novel scaly Sn3O4/TiO2 nanobelt heterostructured photocatalyst was fabricated via a facile hydrothermal route. The scaly Sn3O4 nanoflakes can be synthesized in situ and assembled on surface coarsened TiO2 nanobelts through a hydrothermal process. The morphology and distribution of Sn3O4 nanoflakes can be well-controlled by simply tuning the Sn/Ti molar ratio of the reactants. Compared with single phase nanostructures of Sn3O4 and TiO2, the scaly hybrid nanobelts exhibited markedly enhanced photoelectrochemical (PEC) response, which caused higher photocatalytic hydrogen evolution even without the assistance of Pt as a co-catalyst, and enhanced the degradation ability of organic pollutants under both UV and visible light irradiation. In addition to the increased exposure of active facets and broad light absorption, the outstanding performance is ascribed to the matching energy band structure between Sn3O4 and TiO2 at the two sides of the heterostructure, which efficiently reduces the recombination of photo-excited electron-hole pairs and prolongs the lifetime of charge carriers. Both photocatalytic assessment and PEC tests revealed that Sn3O4/TiO2 heterostructures with a molar ratio of Sn/Ti of 2/1 exhibited the highest photocatalytic activity. This study provides a facile and low-cost method for the large scale production of Sn3O4 based materials in various applications.A novel scaly Sn3O4/TiO2 nanobelt heterostructured photocatalyst was fabricated via a facile hydrothermal route. The scaly Sn3O4 nanoflakes can be synthesized in situ and assembled on surface coarsened TiO2 nanobelts through a hydrothermal process. The morphology and distribution of Sn3O4 nanoflakes can be well-controlled by simply tuning the Sn/Ti molar ratio of the reactants. Compared with single phase nanostructures of Sn3O4 and TiO2, the scaly hybrid nanobelts exhibited markedly enhanced photoelectrochemical (PEC) response, which caused higher photocatalytic hydrogen evolution even without the assistance of Pt as a co-catalyst, and enhanced the degradation ability of organic pollutants under both UV and visible light irradiation. In addition to the increased exposure of active facets and broad light absorption, the outstanding performance is ascribed to the matching energy band structure between Sn3O4 and TiO2 at the two sides of the heterostructure, which efficiently reduces the recombination of photo-excited electron-hole pairs and prolongs the lifetime of charge carriers. Both photocatalytic assessment and PEC tests revealed that Sn3O4/TiO2 heterostructures with a molar ratio of Sn/Ti of 2/1 exhibited the highest photocatalytic activity. This study provides a facile and low-cost method for the large scale production of Sn3O4 based materials in various applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05749j

Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

PubMed

Tang, Jianshi; Wang, Chiu-Yen; Hung, Min-Hsiu; Jiang, Xiaowei; Chang, Li-Te; He, Liang; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

2012-06-26

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

z -Weyl gravity in higher dimensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moon, Taeyoon; Oh, Phillial, E-mail: dpproject@skku.edu, E-mail: ploh@skku.edu

We consider higher dimensional gravity in which the four dimensional spacetime and extra dimensions are not treated on an equal footing. The anisotropy is implemented in the ADM decomposition of higher dimensional metric by requiring the foliation preserving diffeomorphism invariance adapted to the extra dimensions, thus keeping the general covariance only for the four dimensional spacetime. The conformally invariant gravity can be constructed with an extra (Weyl) scalar field and a real parameter z which describes the degree of anisotropy of conformal transformation between the spacetime and extra dimensional metrics. In the zero mode effective 4D action, it reduces tomore » four-dimensional scalar-tensor theory coupled with nonlinear sigma model described by extra dimensional metrics. There are no restrictions on the value of z at the classical level and possible applications to the cosmological constant problem with a specific choice of z are discussed.« less

Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

NASA Astrophysics Data System (ADS)

Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

2018-06-01

Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

Organic heterostructures deposited by MAPLE on AZO substrate

NASA Astrophysics Data System (ADS)

Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

2017-09-01

Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the c-Si\\(100\\)/a-Si:H Heterostructure

NASA Astrophysics Data System (ADS)

Sebastiani, M.; di Gaspare, L.; Capellini, G.; Bittencourt, C.; Evangelisti, F.

1995-10-01

We present a new experimental method for determining band lineups at the semiconductor heterojunctions and apply it to the c-Si100/a-Si:H heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum due to the high escape depth and the high dynamical range of the technique, thus allowing a direct and precise determination of the band lineup. A value of ΔEV = 0.44+/-0.02 eV was found for the valence band discontinuity.

Piezostrain tuning exchange bias mediated by electric field in composite heterostructure

NASA Astrophysics Data System (ADS)

Li, Pingping; Zhou, Cai; Wang, Wenqiang; Cao, Cuimei; Yao, Jinli; Jiang, Changjun

2017-12-01

The change of unidirectional anisotropy and uniaxial anisotropy field turned by piezostrain in an IrMn/Co/Ta/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure with an exchange bias was investigated by ferromagnetic resonance at room temperature. The curve of the magnetic resonance field versus the electric fields showed an asymmetric butterfly-like behavior, which was consistent with the result of strain versus electric field curves. This butterfly-like behavior can be attributed to the piezostrain effect. Specifically, the non-volatile uniaxial anisotropy field and unidirectional anisotropy field behavior under different electric fields induced by piezostrain effect were obtained. Our result is crucial for further application of future multiferroic devices.

Electronic structure, transport, and collective effects in molecular layered systems.

PubMed

Hahn, Torsten; Ludwig, Tim; Timm, Carsten; Kortus, Jens

2017-01-01

The great potential of organic heterostructures for organic device applications is exemplified by the targeted engineering of the electronic properties of phthalocyanine-based systems. The transport properties of two different phthalocyanine systems, a pure copper phthalocyanine (CoPc) and a flourinated copper phthalocyanine-manganese phthalocyanine (F 16 CoPc/MnPc) heterostructure, are investigated by means of density functional theory (DFT) and the non-equilibrium Green's function (NEGF) approach. Furthermore, a master-equation-based approach is used to include electronic correlations beyond the mean-field-type approximation of DFT. We describe the essential theoretical tools to obtain the parameters needed for the master equation from DFT results. Finally, an interacting molecular monolayer is considered within a master-equation approach.

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

NASA Astrophysics Data System (ADS)

Deen, David A.; Osinsky, Andrei; Miller, Ross

2014-03-01

A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

Positrons as interface-sensitive probes of polar semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Makkonen, I.; Snicker, A.; Puska, M. J.; Mäki, J.-M.; Tuomisto, F.

2010-07-01

Group-III nitrides in their wurtzite crystal structure are characterized by large spontaneous polarization and significant piezoelectric contributions in heterostructures formed of these materials. Polarization discontinuities in polar heterostructures grown along the (0001) direction result in huge built-in electric fields on the order of megavolt per centimeter. We choose the III-nitride heterostructures as archetypal representatives of polar heterostructures formed of semiconducting or insulating materials and study the behavior of positrons in these structures using first-principles electronic-structure theory supported by positron annihilation experiments for bulk systems. The strong electric fields drive positrons close to interfaces, which is clearly seen in the predicted momentum distributions of annihilating electron-positron pairs as changes relative to the constituent bulk materials. Implications of the effect to positron defect studies of polar heterostructures are addressed.

Generalized Ellipsometry on Complex Nanostructures and Low-Symmetry Materials

NASA Astrophysics Data System (ADS)

Mock, Alyssa Lynn

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with monoclinic and triclinic symmetries. A model eigendielectric displacement vector approach is developed, described and utilized to characterize monoclinic materials. Materials are investigated in spectral regions spanning from the far-infrared to the vacuum ultraviolet. Examples are demonstrated for phonon mode determination in cadmium tungstate and yttrium silicate and for band-to-band transitions in gallia (beta-Ga2O3) single crystals. Furthermore, the anisotropic optical properties of an emerging class of spatially coherent heterostructure materials with nanostructure dimensions are investigated. The so-called anisotropic effective medium approximation for slanted columnar thin films is extended to the concept of slanted columnar heterostructure thin films as well as core-shell heterostructure thin films. Examples include the determination of band-to-band transitions, phonon modes and oxidation properties of cobalt-oxide core shell structures and gas-liquid-solid distribution during controlled adsorption of organic solvents in silicon slanted columnar thin films.

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

PubMed

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Ultrafast Charge Transfer and Hybrid Exciton Formation in 2D/0D Heterostructures

DOE PAGES

Boulesbaa, Abdelaziz; Wang, Kai; Mahjouri-Samani, Masoud; ...

2016-10-18

We report that photoinduced interfacial charge transfer is at the heart of many applications, including photovoltaics, photocatalysis, and photodetection. With the emergence of a new class of semiconductors such as monolayer two-dimensional transition metal dichalcogenides (2D-TMDs), charge transfer at the 2D/2D heterojunctions attracted several efforts due to the remarkable optical and electrical properties of 2D-TMDs. Unfortunately, in 2D/2D heterojunctions, for a given combination of two materials, the relative energy band alignment and the charge transfer efficiency are locked. Due to their large variety and broad size tunability, semiconductor quantum dots (0D-QDs) interfaced with 2D-TMDs may become an attractive heterostructure formore » optoelectronic applications. Here, we incorporate femtosecond pump-probe spectroscopy to reveal the sub-45 fs charge transfer at a 2D/0D heterostructure composed of tungsten disulfide monolayers (2D-WS 2) and a single layer of cadmium selenide (CdSe)/zinc sulfide (ZnS) core/shell 0D-QDs. Furthermore, ultrafast dynamics and steady-state measurements suggested that following electron transfer from the 2D to the 0D, hybrid excitons (HXs), wherein the electron resides in the 0D and hole resides in the 2D-TMD monolayer, are formed with a binding energy on the order of ~140 meV, which is several times lower than that of tightly bound excitons in 2D-TMDs.« less

Ultrafast Charge Transfer and Hybrid Exciton Formation in 2D/0D Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boulesbaa, Abdelaziz; Wang, Kai; Mahjouri-Samani, Masoud

We report that photoinduced interfacial charge transfer is at the heart of many applications, including photovoltaics, photocatalysis, and photodetection. With the emergence of a new class of semiconductors such as monolayer two-dimensional transition metal dichalcogenides (2D-TMDs), charge transfer at the 2D/2D heterojunctions attracted several efforts due to the remarkable optical and electrical properties of 2D-TMDs. Unfortunately, in 2D/2D heterojunctions, for a given combination of two materials, the relative energy band alignment and the charge transfer efficiency are locked. Due to their large variety and broad size tunability, semiconductor quantum dots (0D-QDs) interfaced with 2D-TMDs may become an attractive heterostructure formore » optoelectronic applications. Here, we incorporate femtosecond pump-probe spectroscopy to reveal the sub-45 fs charge transfer at a 2D/0D heterostructure composed of tungsten disulfide monolayers (2D-WS 2) and a single layer of cadmium selenide (CdSe)/zinc sulfide (ZnS) core/shell 0D-QDs. Furthermore, ultrafast dynamics and steady-state measurements suggested that following electron transfer from the 2D to the 0D, hybrid excitons (HXs), wherein the electron resides in the 0D and hole resides in the 2D-TMD monolayer, are formed with a binding energy on the order of ~140 meV, which is several times lower than that of tightly bound excitons in 2D-TMDs.« less

2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation

NASA Astrophysics Data System (ADS)

Guo, Yaguang; Saidi, Wissam A.; Wang, Qian

2017-09-01

Halide perovskites and van der Waals (vdW) heterostructures are both of current interest owing to their novel properties and potential applications in nano-devices. Here, we show the great potential of 2D halide perovskite sheets (C4H9NH3)2PbX4 (X  =  Cl, Br and I) that were synthesized recently (Dou et al 2015 Science 349 1518-21) as the channel materials contacting with graphene and other 2D metallic sheets to form van der Waals heterostructures for field effect transistor (FET). Based on state-of-the-art theoretical simulations, we show that the intrinsic properties of the 2D halide perovskites are preserved in the heterojunction, which is different from the conventional contact with metal surfaces. The 2D halide perovskites form a p-type Schottky barrier (Φh) contact with graphene, where tunneling barrier exists, and a negative band bending occurs at the lateral interface. We demonstrate that the Schottky barrier can be turned from p-type to n-type by doping graphene with nitrogen atoms, and a low-Φh or an Ohmic contact can be realized by doping graphene with boron atoms or replacing graphene with other high-work-function 2D metallic sheets such as ZT-MoS2, ZT-MoSe2 and H-NbS2. This study not only predicts a 2D halide perovskite-based FETs, but also enhances the understanding of tuning Schottky barrier height in device applications.

Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

NASA Astrophysics Data System (ADS)

Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

2018-06-01

Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

New faces of porous Prussian blue: interfacial assembly of integrated hetero-structures for sensing applications.

PubMed

Kong, Biao; Selomulya, Cordelia; Zheng, Gengfeng; Zhao, Dongyuan

2015-11-21

Prussian blue (PB), the oldest synthetic coordination compound, is a classic and fascinating transition metal coordination material. Prussian blue is based on a three-dimensional (3-D) cubic polymeric porous network consisting of alternating ferric and ferrous ions, which provides facile assembly as well as precise interaction with active sites at functional interfaces. A fundamental understanding of the assembly mechanism of PB hetero-interfaces is essential to enable the full potential applications of PB crystals, including chemical sensing, catalysis, gas storage, drug delivery and electronic displays. Developing controlled assembly methods towards functionally integrated hetero-interfaces with adjustable sizes and morphology of PB crystals is necessary. A key point in the functional interface and device integration of PB nanocrystals is the fabrication of hetero-interfaces in a well-defined and oriented fashion on given substrates. This review will bring together these key aspects of the hetero-interfaces of PB nanocrystals, ranging from structure and properties, interfacial assembly strategies, to integrated hetero-structures for diverse sensing.

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

PubMed Central

Hsu, Chih-Hung; Chen, Lung-Chien; Lin, Yi-Feng

2013-01-01

This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas. PMID:28788341

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

NASA Astrophysics Data System (ADS)

Sivakumar, Chockalingam

Efficient electrical spin injection from half-metal (HM) electrodes into semiconducting (SC) channel material is a desirable aspect in spintronics, but a challenging one. Half-metals based on the Heusler alloy family are promising candidates as spin sources due to their compatibility with compound SCs, and very high Curie temperatures. Numerous efforts were made in the past two decades to grow atomically abrupt interfaces between HM_Heusler and SC heterostructures. However, diffusion of magnetic impurities into the semiconductor, defects and disorder near the interface, and formation of reacted phases were great challenges. A number of theoretical efforts were undertaken to understand the role of such material defects in destroying the half-metallicity and also to propose promising half-metal/SC heterostructures based on first principles. This dissertation summarizes the investigations undertaken to decode the complexity of, and to understand the various physical properties of, a number of real-world Heusler/SC heterostructure samples, based on the ab initio density functional theory (DFT) approach. In addition, it summarizes various results from the first principles-based search for promising half-metal/SC heterostructures. First, I present results from DFT-based predictive models of actual Co 2MnSi (CMS)/GaAs heterostructures grown in (001) texture. I investigate the physical, chemical, electronic, and magnetic properties to understand the complexity of these structures and to pinpoint the origin of interfacial effects, when present. Based on the investigations of such models, I discuss the utility of those actual samples in spintronic applications. Next, I summarise the results from an ab initio DFT-based survey of 6 half-Heusler half-metal/GaAs heterostructure models in (110) texture, since compound semiconductors such as GaAs have very long spin lifetime in (110) layering. I show 3 half-Heusler alloys (CoVAs, NiMnAs, and RhFeGe), that when interfaced with GaAs(110), fully preserve the half-metallicity at the interface. Finally, I show the advantages of inserting half-Heusler SCs, particularly CoTiAs and CoTiSb, as spacers in between CMS/GaAs systems in (110) layering. Based on DFT calculations, I show that CoTiAs is a promising spacer that could enhance the perpendicular magnetic anisotropy in CMS, while preserving the important half-metallic character at the heterojunctions between CMS/CoTiAs/GaAs(110). This spacer could also serve to prevent in-diffusion of magnetic impurities into the channel material.

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

NASA Astrophysics Data System (ADS)

Li, Jiayu; Lin, Li; Huang, Guang-Yao; Kang, N.; Zhang, Jincan; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.

2018-02-01

Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0 ° -twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm2 V-1 s-1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures.

Clock synchronization by accelerated observers - Metric construction for arbitrary congruences of world lines

NASA Technical Reports Server (NTRS)

Henriksen, R. N.; Nelson, L. A.

1985-01-01

Clock synchronization in an arbitrarily accelerated observer congruence is considered. A general solution is obtained that maintains the isotropy and coordinate independence of the one-way speed of light. Attention is also given to various particular cases including, rotating disk congruence or ring congruence. An explicit, congruence-based spacetime metric is constructed according to Einstein's clock synchronization procedure and the equation for the geodesics of the space-time was derived using Hamilton-Jacobi method. The application of interferometric techniques (absolute phase radio interferometry, VLBI) to the detection of the 'global Sagnac effect' is also discussed.

Reference Frames in Relativistic Space-Time

NASA Astrophysics Data System (ADS)

Soffel, M.; Herold, H.; Ruder, H.; Schneider, M.

Three fundamental concepts of reference frames in relativistic space-time are confronted: 1. the gravitation compass, 2. the stellar compass and 3. the inertial compass. It is argued that under certain conditions asymptotically fixed (stellar) reference frames can be introduced with the same rigour as local Fermi frames, thereby eliminating one possible psychological reason why the importance of Fermi frames frequently has been overestimated in the past. As applications of these three concepts the authors discuss: 1. a relativistic definition of the geoid, 2. a relativistic astrometric problem and 3. the post-Newtonian theory of a laser gyroscope fixed to the Earth's surface.

Heterostructures Prepared by Surface Modification of Nanocrystals

ERIC Educational Resources Information Center

Lee, Bo Hyun

2009-01-01

Inorganic nanocrystals (NCs) have drawn the attention from many researchers due to their promising potentials for next generation technologies, from photovoltaics to biological applications. Various types of NCs have become available by synthetic protocols developed in the last two decades. In addition, multicomponent hybrid NCs which can be…

Graphene/blue-phosphorus heterostructure as potential anode materials for sodium-ion batteries

NASA Astrophysics Data System (ADS)

Fan, Kaimin; Tang, Ting; Wu, Shiyun; Zhang, Zhiyuan

2018-01-01

The first-principles calculations based on density functional theory (DFT) have been implemented to investigate the graphene/blue-phosphorus (G/BP) heterostructure as potential anode material for SIBs. The adsorption and diffusion behaviors of sodium (Na) in G/BP heterostructure and the effect of external electric field on Na adsorption have been investigated. The results indicate that G/BP heterostructure with Na adsorption is metallic due to Na incorporation, which is of benefit for electronic conductivity as anode material. The results show that the design of G/BP heterostructure is an efficient scheme to enhance the Na adsorption in G/BP without affecting the high mobility of Na in the G/BP heterostructure surface. The present work demonstrates that the external electric field can effectively modulate the adsorption of Na, and the adsorption behavior of Na is more sensitive to the external electric field when E > 0.10 V Å-1 in G/BP heterostructure. The Mulliken population analysis and DOS calculations have been performed to explore the charge transfer and the interaction between Na and G/BP.

Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; David-Bosne, E.; Wahl, U.; Miranda, P.; da Silva, M. R.; Correia, J. G.; Lorenz, K.

2018-03-01

Strain is a critical parameter affecting the growth and the performance of many semiconductor systems but, at the same time, the accurate determination of strain profiles in heterostructures can be challenging, especially at the nanoscale. Ion channelling/blocking is a powerful technique for the detection of the strain state of thin films, normally carried out through angular scans with conventional particle detectors. Here we report the novel application of position sensitive detectors for the evaluation of the strain in a series of AlInN/GaN heterostructures with different compositions and thicknesses. The tetragonal strain is varied from compressive to tensile and analysed through bidimensional blocking patterns. The results demonstrate that strain can be correctly quantified when compared to Monte Carlo channelling simulations, which are essential because of the presence of ion steering effects at the interface between the layer and the substrate. Despite this physical limitation caused by ion steering, our results show that full bidimensional patterns can be applied to detect fingerprints and enhance the accuracy for most critical cases, in which the angular shift associated to the lattice distortion is below the critical angle for channelling.

Graphene analogue in (111)-oriented BaBiO3 bilayer heterostructures for topological electronics.

PubMed

Kim, Rokyeon; Yu, Jaejun; Jin, Hosub

2018-01-11

Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to their multiple Dirac cones and the π-Berry phase of each Dirac cone, graphene-like electronic structures constitute an ideal platform for topological electronics; graphene can provide various topological phases when incorporated with large spin-orbit coupling and mass-gap tunability via symmetry-breaking. Here, we propose that a (111)-oriented BaBiO 3 bilayer (BBL) sandwiched between large-gap perovskite oxides is a promising candidate for topological electronics by realizing a gap-tunable, and consequently a topology-tunable, graphene analogue. Depending on how neighboring perovskite spacers are chosen, the inversion symmetry of the BBL heterostructure can be either conserved or broken, leading to the quantum spin Hall (QSH) and quantum valley Hall (QVH) phases, respectively. BBL sandwiched by ferroelectric compounds enables switching of the QSH and QVH phases and generates the topological domain boundary. Given the abundant order parameters of the sandwiching oxides, the BBL can serve as versatile topological building blocks in oxide heterostructures.

Tuning static and dynamic properties of FeGa/NiFe heterostructures

NASA Astrophysics Data System (ADS)

Rementer, Colin R.; Fitzell, Kevin; Xu, Qiang; Nordeen, Paul; Carman, Gregory P.; Wang, Yuanxun E.; Chang, Jane P.

2017-06-01

In this work, the frequency-dependent magnetic properties of sputtered Galfenol/Permalloy (Fe85Ga15/Ni81Fe19 or FeGa/NiFe) magnetic multilayers were examined to tailor their magnetic softness, loss at microwave frequencies, permeability, and magnetoelasticity, leveraging the magnetic softness and low loss of NiFe and the high saturation magnetostriction (λs) and magnetization (MS) of FeGa. The total volume of each material and their ratio were kept constant, and the number of alternating layers was increased (with decreasing individual layer thickness) to assess the role of increasing interfaces in these magnetic heterostructures. A systematic change was observed as the number of bilayers or interfaces increases: a seven-bilayer structure results in an 88% reduction in coercivity and a 55% reduction in ferromagnetic resonance linewidth at the X-band compared to a single phase FeGa film, while maintaining a high relative permeability of 700. The magnetostriction was slightly reduced by the addition of NiFe but was still maintained at up to 67% that of single phase FeGa. The tunability of these magnetic heterostructures makes them excellent candidates for RF magnetic applications requiring strong magnetoelastic coupling and low loss.

Thin film GaP for solar cell application

NASA Astrophysics Data System (ADS)

Morozov, I. A.; Gudovskikh, A. S.; Kudryashov, D. A.; Nikitina, E. V.; Kleider, J.-P.; Myasoedov, A. V.; Levitskiy, V.

2016-08-01

A new approach to the silicon based heterostructures technology consisting of the growth of III-V compounds (GaP) on a silicon substrate by low-temperature plasma enhanced atomic layer deposition (PE-ALD) is proposed. The basic idea of the method is to use a time modulation of the growth process, i.e. time separated stages of atoms or precursors transport to the growing surface, migration over the surface, and crystal lattice relaxation for each monolayer. The GaP layers were grown on Si substrates by PE-ALD at 350°C with phosphine (PH3) and trimethylgallium (TMG) as sources of III and V atoms. Scanning and transmission electron microscopy demonstrate that the grown GaP films have homogeneous amorphous structure, smooth surface and a sharp GaP/Si interface. The GaP/Si heterostructures obtained by PE-ALD compare favourably to that conventionally grown by molecular beam epitaxy (MBE). Indeed, spectroscopic ellipsometry measurements indicate similar interband optical absorption while photoluminescence measurements indicate higher charge carrier effective lifetime. The better passivation properties of GaP layers grown by PE-ALD demonstrate a potential of this technology for new silicon based photovoltaic heterostructure

Two-Dimensional Graphene-Gold Interfaces Serve as Robust Templates for Dielectric Capacitors.

PubMed

Teshome, Tamiru; Datta, Ayan

2017-10-04

The electronic structures of novel heterostructures, namely, graphene-Au van der Waals (vdW) interfaces, have been studied using density functional theory. Dispersion-corrected PBE-D2 functionals are used to describe the phonon spectrum and binding energies. Ab initio molecular dynamics simulations reveal that the vdW framework is preserved till 1200 K. Beyond T = 1200 K, a transition of the quasiplanar Au into the three-dimensional cluster-like structure is observed. A dielectric capacitor is designed by placing 1-4 hexagonal boron nitride (h-BN) monolayers between graphene and Au conductive plates. Charge separation between the Au and graphene plates is carried out under the effect of an external field normal to the graphene-h-BN-Au interface. The gravimetric capacitances are computed as C 1 = 7.6 μF/g and C 2 = 3.2 μF/g for h-BN bilayers with the Au-graphene heterostructures. The capacitive behavior shows strong deviations from the classical charging models and exemplifies the importance of quantum phenomenon at short contacts, which eventually nullifies at large interelectrode distances. The graphene-Au interface is predicted to be an exciting vdW heterostructure with a potential application as a dielectric capacitor.

Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

NASA Astrophysics Data System (ADS)

Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

PubMed Central

Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

2014-01-01

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kaun, Stephen W.; Mazumder, Baishakhi; Fireman, Micha N.; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

2015-05-01

When grown at a high temperature (820 °C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (∼0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 °C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Ω/□, respectively.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

NASA Astrophysics Data System (ADS)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

One-step synthesis of van der Waals heterostructures of graphene and two-dimensional superconducting α -M o2C

NASA Astrophysics Data System (ADS)

Qiao, Jia-Bin; Gong, Yue; Zuo, Wei-Jie; Wei, Yi-Cong; Ma, Dong-Lin; Yang, Hong; Yang, Ning; Qiao, Kai-Yao; Shi, Jin-An; Gu, Lin; He, Lin

2017-05-01

Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables unprecedented possibilities for combining the best of different ingredients in one objective material. So far, metallic, semiconducting, and insulating 2D crystals have been used successfully in making functional vdW heterostructures with properties by design. Here, we expand 2D superconducting crystals as a building block of vdW hererostructures. One-step growth of large-scale high-quality vdW heterostructures of graphene and 2D superconducting α -M o2C by using chemical vapor deposition is reported. The superconductivity and its 2D nature of the heterostructures are characterized by our scanning tunneling microscopy measurements. This adds 2D superconductivity, the most attractive property of condensed matter physics, to vdW heterostructures.

Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation.

PubMed

Xie, Ying Peng; Yang, Yongqiang; Wang, Guosheng; Liu, Gang

2017-10-01

The solid-state Z-scheme trinary/binary heterostructures show the advantage of utilizing the high-energy photogenerated charge carriers in photocatalysis. However, the key factors controlling such Z-scheme in the binary heterostructures are still unclear. In this paper, we showed that oxygen vacancies could act as an interface electron transfer mediator to promote the direct Z-scheme charge transfer process in binary semiconductor heterostructures of CdS/ZnS. Increasing the concentration of surface oxygen vacancies of ZnO crystal can greatly enhance photocatalytic hydrogen generation of CdS/ZnO heterostructure. This was attributed to the strengthened direct Z-scheme charge transfer process in CdS/ZnO, as evidenced by steady-state/time-resolved photoluminescence spectroscopy and selective photodeposition of metal particles on the heterostructure. Copyright © 2017 Elsevier Inc. All rights reserved.

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

PubMed Central

Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

2016-01-01

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

Precise tuning in platinum-nickel/nickel sulfide interface nanowires for synergistic hydrogen evolution catalysis

PubMed Central

Wang, Pengtang; Zhang, Xu; Zhang, Jin; Wan, Sheng; Guo, Shaojun; Lu, Gang; Yao, Jianlin; Huang, Xiaoqing

2017-01-01

Comprising abundant interfaces, multicomponent heterostructures can integrate distinct building blocks into single entities and yield exceptional functionalities enabled by the synergistic components. Here we report an efficient approach to construct one-dimensional metal/sulfide heterostructures by directly sulfuring highly composition-segregated platinum-nickel nanowires. The heterostructures possess a high density of interfaces between platinum-nickel and nickel sulfide components, which cooperate synergistically towards alkaline hydrogen evolution reaction. The platinum-nickel/nickel sulfide heterostructures can deliver a current density of 37.2 mA cm−2 at an overpotential of 70 mV, which is 9.7 times higher than that of commercial Pt/C. The heterostructures also offer enhanced stability revealed by long-term chronopotentiometry measurements. The present work highlights a potentially powerful interface-engineering strategy for designing multicomponent heterostructures with advanced performance in hydrogen evolution reaction and beyond. PMID:28239145

Electronic transport and photovoltaic properties in Bi2Sr2Co2Oyepitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Hai-Zhong; Gu, Lin; Yang, Zhen-Zhong; Wang, Shu-Fang; Fu, Guang-Sheng; Wang, Le; Jin, Kui-Juan; Lu, Hui-Bin; Wang, Can; Ge, Chen; He, Meng; Yang, Guo-Zhen

2013-08-01

Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition. The scanning transmission electron microscopy results confirm that the heterostructures are epitaxial, with sharp and coherent interfaces. The temperature-dependent electrical transport properties and the Hall effects were systematically investigated. The Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 p-n heterostructure exhibits good rectifying current-voltage characteristics over a wide temperature range. A strong photovoltaic effect was observed in the Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 heterostructure, with the temperature-dependent photovoltage being systematically investigated. The present work shows a great potential of this new heterostructures as photoelectric devices.

Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487; Shi, Wenwu

2014-10-15

Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titaniamore » or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.« less

2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

DOE PAGES

Lin, Zhong; McCreary, Amber; Briggs, Natalie; ...

2016-12-08

The rise of two-dimensional (2D) materials research took place following the isolation of graphene in 2004. These new 2D materials include transition metal dichalcogenides, mono-elemental 2D sheets, and several carbide- and nitride-based materials. The number of publications related to these emerging materials has been drastically increasing over the last five years. Thus, through this comprehensive review, we aim to discuss the most recent groundbreaking discoveries as well as emerging opportunities and remaining challenges. This review starts out by delving into the improved methods of producing these new 2D materials via controlled exfoliation, metal organic chemical vapor deposition, and wet chemicalmore » means. Here we look into recent studies of doping as well as the optical properties of 2D materials and their heterostructures. Recent advances towards applications of these materials in 2D electronics are also reviewed, and include the tunnel MOSFET and ways to reduce the contact resistance for fabricating high-quality devices. Finally, several unique and innovative applications recently explored are discussed as well as perspectives of this exciting and fast moving field.« less

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less

Mesoporous Phosphate Heterostructures: Synthesis and Application on Adsorption and Catalysis

NASA Astrophysics Data System (ADS)

Moreno-Tost, Ramón; Jiménez-Jiménez, José; Infantes-Molina, Antonia; Cavalcante, Celio L.; Azevedo, Diana C. S.; Soriano, María Dolores; López Nieto, José Manuel; Jiménez-López, Antonio; Rodríguez-Castellón, Enrique

Porous phosphate heterostructures (PPHs) are solids formed by a layered metal(IV) phosphate expanded with silica galleries obtained by combining the two main strategies for obtaining mesoporous materials [pillared layered structures (PLS') and MCM-41]. The different synthetic pathways for obtaining mesoporous phosphate structures with silica galleries with Zr- or Ti-doped silica, the study of their structural, textural and acid properties, its functionalisation with different organic substances such as propionitrile, 3-aminopropyl triethoxysilane, (3-mercaptopropyl)trimethoxysilane, vinyltrimethoxysilane, phenyltriethoxysilane and 3-(triethoxysilyl)propionitrile are discussed. The preparation of metal-supported catalysts and their application in gas separation, adsorption and catalysis are reviewed. Specifically, the use of Cu- and Fe-exchanged PPH for the adsorption of benzothiophene and the separation of propane/propene is the main application as adsorbent. The hydrotreating of aromatic hydrocarbons using ruthenium-impregnated catalysts via hydrogenation and hydrogenolysis/hydrocracking for the production of clean diesel fuels, the selective catalytic reduction of NO from stationary and mobile sources by using Cu-PPH with 1, 3 and 7 wt% of Cu and the selective oxidation of hydrogen sulphide to sulphur with vanadium-containing PPH are the three catalytic reactions of environmental interest studied.

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-02-15

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces themore » Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

Impurity-induced states in superconducting heterostructures

NASA Astrophysics Data System (ADS)

Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

2018-04-01

Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

NASA Astrophysics Data System (ADS)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1993-01-01

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

NASA Astrophysics Data System (ADS)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

2018-07-01

Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

Preparation and characterization of BiFeO3/La0.7Sr0.3MnO3 heterostructure grown on SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Zhao, Chenwei; Zhou, Chaochao; Chen, Changle

2017-09-01

In this paper, BiFeO3/La0.7Sr0.3MnO3 heterostructure is fabricated on the SrTiO (100) substrate using the pulsed laser deposition method (PLD). Magnetization hystersis loops of the BiFeO3/La0.7Sr0.3MnO3 heterostructure are obtained at 300 K and 80 K. The heterostructure exhibits evident ferromagnetic characteristic at both room temperature and 80 K. At 80 K, magnetization of the heterostructure is stronger than room temperature magnetic measure. The temperature dependence of resistance of the heterostructure with different currents is also studied. With different currents, there appears to be a peak resistance about 180 K. When I is 50 uA, ΔR is 68.4%. And when I is 100 uA, ΔR is 79.3%. The BiFeO3/La0.7Sr0.3MnO3 heterostructure exhibits a positive colossal magnetoresistance (MR) effect over a temperature range of 80-300 K. In our heterostructure, maximum magnetic resistance appears in 210 K, and MR = 44.34%. Mechanism analysis of the leakage current at room temperature shows that the leakage current is the interface-limited Schottky emission, but not dominated by the Poole-Frenkel emission or SCLC.

Frontiers in Relativistic Celestial Mechanics, Vol. 2, Applications and Experiments

NASA Astrophysics Data System (ADS)

Kopeikin, Sergei

2014-08-01

Relativistic celestial mechanics - investigating the motion celestial bodies under the influence of general relativity - is a major tool of modern experimental gravitational physics. With a wide range of prominent authors from the field, this two-volume series consists of reviews on a multitude of advanced topics in the area of relativistic celestial mechanics - starting from more classical topics such as the regime of asymptotically-flat spacetime, light propagation and celestial ephemerides, but also including its role in cosmology and alternative theories of gravity as well as modern experiments in this area. This second volume of a two-volume series covers applications of the theory as well as experimental verifications. From tools to determine light travel times in curved space-time to laser ranging between earth and moon and between satellites, and impacts on the definition of time scales and clock comparison techniques, a variety of effects is discussed. On the occasion of his 80-th birthday, these two volumes honor V. A. Brumberg - one of the pioneers in modern relativistic celestial mechanics. Contributions include: J. Simon, A. Fienga: Victor Brumberg and the French school of analytical celestial mechanics T. Fukushima: Elliptic functions and elliptic integrals for celestial mechanics and dynamical astronomy P. Teyssandier: New tools for determining the light travel time in static, spherically symmetric spacetimes beyond the order G2 J. Müller, L. Biskupek, F. Hofmann and E. Mai: Lunar laser ranging and relativity N. Wex: Testing relativistic celestial mechanics with radio pulsars I. Ciufolini et al.: Dragging of inertial frames, fundamental physics, and satellite laser ranging G. Petit, P. Wolf, P. Delva: Atomic time, clocks, and clock comparisons in relativistic spacetime: a review

TiO{sub 2} nanobelts with a uniform coating of g-C{sub 3}N{sub 4} as a highly effective heterostructure for enhanced photocatalytic activities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Xing; Jin, Meimei; Dong, Huaqing

2014-12-15

A novel g-C{sub 3}N{sub 4}/TiO{sub 2} nanobelt (NB) heterostructure was successfully designed and prepared. The as-prepared g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructure exhibited high photocatalytic activity not only in the photodegradation of Rhodamine B (RhB) but also in photocatalytic H{sub 2} production. The g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructure with a mass ratio of 1:1 demonstrated the best performance in the photodegradation of RhB, whereas a mass ratio of 3:1 demonstrated the highest H{sub 2} production rate of 46.6 μmol h{sup −1} in photocatalytic H{sub 2} production. We conclude that the synergistic effect between g-C{sub 3}N{sub 4} and TiO{sub 2}more » NBs promotes the photogenerated carrier separation in space. This valuable insight into the rational architectural design of nanostructure-based photocatalysts is expected to shed light on other photocatalytic reaction systems in the future. - Graphical abstract: A novel strategy to fabricate the g-C{sub 3}N{sub 4}/TiO{sub 2} nanobelt (NB) heterostructures was reported. The g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructures exhibited highly effective photocatalytic activities for photodegradation of Rhodamine B and H{sub 2} production. - Highlights: • A novel strategy to fabricate the g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructures was reported. • The heterostructure exhibited high catalytic activity in photodegradation of RhB. • The heterostructure showed good H{sub 2} productivity in photocatalytic water splitting. • The synergistic effect between g-C{sub 3}N{sub 4} and TiO{sub 2} NBs are important. • This study shows that the heterostructure can be an effective photocatalyst.« less

NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

NASA Astrophysics Data System (ADS)

Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

2017-08-01

Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

NASA Astrophysics Data System (ADS)

Nguyen, Chuong V.

2018-04-01

In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

PubMed

Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

2016-12-01

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DFT study on the interfacial properties of vertical and in-plane BiOI/BiOIO3 hetero-structures.

PubMed

Dai, Wen-Wu; Zhao, Zong-Yan

2017-04-12

Composite photocatalysts with hetero-structures usually favor the effective separation of photo-generated carriers. In this study, BiOIO 3 was chosen to form a hetero-structure with BiOI, due to its internal polar field and good lattice matching with BiOI. The interfacial properties and band offsets were focused on and analyzed in detail by DFT calculations. The results show that the charge depletion and accumulation mainly occur in the region near the interface. This effect leads to an interfacial electric field and thus, the photo-generated electron-hole pairs can be easily separated and transferred along opposite directions at the interface, which is significant for the enhancement of the photocatalytic activity. Moreover, according to the analysis of band offsets, the vertical BiOI/BiOIO 3 belongs to the type-II hetero-structure, while the in-plane BiOI/BiOIO 3 belongs to the type-I hetero-structure. The former type of hetero-structure has more favorable effects to enhance the photocatalytic activity of BiOI than that of the latter type of hetero-structure. In the case of the vertical BiOI/BiOIO 3 hetero-structure, photo-generated electrons can move from the conduction band of BiOI to that of BiOIO 3 , while holes can move from the valence band of BiOIO 3 to that of BiOI under solar radiation. In addition, the introduced internal electric field functions as a selector that can promote the separation of photo-generated carriers, resulting in the higher photocatalytic quantum efficiency. These findings illustrate the underlying mechanism for the reported experiments, and can be used as a basis for the design of novel highly efficient composite photocatalysts with hetero-structures.

Loop Quantum Gravity.

PubMed

Rovelli, Carlo

2008-01-01

The problem of describing the quantum behavior of gravity, and thus understanding quantum spacetime , is still open. Loop quantum gravity is a well-developed approach to this problem. It is a mathematically well-defined background-independent quantization of general relativity, with its conventional matter couplings. Today research in loop quantum gravity forms a vast area, ranging from mathematical foundations to physical applications. Among the most significant results obtained so far are: (i) The computation of the spectra of geometrical quantities such as area and volume, which yield tentative quantitative predictions for Planck-scale physics. (ii) A physical picture of the microstructure of quantum spacetime, characterized by Planck-scale discreteness. Discreteness emerges as a standard quantum effect from the discrete spectra, and provides a mathematical realization of Wheeler's "spacetime foam" intuition. (iii) Control of spacetime singularities, such as those in the interior of black holes and the cosmological one. This, in particular, has opened up the possibility of a theoretical investigation into the very early universe and the spacetime regions beyond the Big Bang. (iv) A derivation of the Bekenstein-Hawking black-hole entropy. (v) Low-energy calculations, yielding n -point functions well defined in a background-independent context. The theory is at the roots of, or strictly related to, a number of formalisms that have been developed for describing background-independent quantum field theory, such as spin foams, group field theory, causal spin networks, and others. I give here a general overview of ideas, techniques, results and open problems of this candidate theory of quantum gravity, and a guide to the relevant literature.

2D materials and van der Waals heterostructures.

PubMed

Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

2016-07-29

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices. Copyright © 2016, American Association for the Advancement of Science.

Action detection by double hierarchical multi-structure space-time statistical matching model

NASA Astrophysics Data System (ADS)

Han, Jing; Zhu, Junwei; Cui, Yiyin; Bai, Lianfa; Yue, Jiang

2018-03-01

Aimed at the complex information in videos and low detection efficiency, an actions detection model based on neighboring Gaussian structure and 3D LARK features is put forward. We exploit a double hierarchical multi-structure space-time statistical matching model (DMSM) in temporal action localization. First, a neighboring Gaussian structure is presented to describe the multi-scale structural relationship. Then, a space-time statistical matching method is proposed to achieve two similarity matrices on both large and small scales, which combines double hierarchical structural constraints in model by both the neighboring Gaussian structure and the 3D LARK local structure. Finally, the double hierarchical similarity is fused and analyzed to detect actions. Besides, the multi-scale composite template extends the model application into multi-view. Experimental results of DMSM on the complex visual tracker benchmark data sets and THUMOS 2014 data sets show the promising performance. Compared with other state-of-the-art algorithm, DMSM achieves superior performances.

A short essay on quantum black holes and underlying noncommutative quantized space-time

NASA Astrophysics Data System (ADS)

Tanaka, Sho

2017-01-01

We emphasize the importance of noncommutative geometry or Lorenz-covariant quantized space-time towards the ultimate theory of quantum gravity and Planck scale physics. We focus our attention on the statistical and substantial understanding of the Bekenstein-Hawking area-entropy law of black holes in terms of the kinematical holographic relation (KHR). KHR manifestly holds in Yang’s quantized space-time as the result of kinematical reduction of spatial degrees of freedom caused by its own nature of noncommutative geometry, and plays an important role in our approach without any recourse to the familiar hypothesis, so-called holographic principle. In the present paper, we find a unified form of KHR applicable to the whole region ranging from macroscopic to microscopic scales in spatial dimension d  =  3. We notice a possibility of nontrivial modification of area-entropy law of black holes which becomes most remarkable in the extremely microscopic system close to Planck scale.

Time-Accurate, Unstructured-Mesh Navier-Stokes Computations with the Space-Time CESE Method

NASA Technical Reports Server (NTRS)

Chang, Chau-Lyan

2006-01-01

Application of the newly emerged space-time conservation element solution element (CESE) method to compressible Navier-Stokes equations is studied. In contrast to Euler equations solvers, several issues such as boundary conditions, numerical dissipation, and grid stiffness warrant systematic investigations and validations. Non-reflecting boundary conditions applied at the truncated boundary are also investigated from the stand point of acoustic wave propagation. Validations of the numerical solutions are performed by comparing with exact solutions for steady-state as well as time-accurate viscous flow problems. The test cases cover a broad speed regime for problems ranging from acoustic wave propagation to 3D hypersonic configurations. Model problems pertinent to hypersonic configurations demonstrate the effectiveness of the CESE method in treating flows with shocks, unsteady waves, and separations. Good agreement with exact solutions suggests that the space-time CESE method provides a viable alternative for time-accurate Navier-Stokes calculations of a broad range of problems.

Physics in space-time with scale-dependent metrics

NASA Astrophysics Data System (ADS)

Balankin, Alexander S.

2013-10-01

We construct three-dimensional space Rγ3 with the scale-dependent metric and the corresponding Minkowski space-time Mγ,β4 with the scale-dependent fractal (DH) and spectral (DS) dimensions. The local derivatives based on scale-dependent metrics are defined and differential vector calculus in Rγ3 is developed. We state that Mγ,β4 provides a unified phenomenological framework for dimensional flow observed in quite different models of quantum gravity. Nevertheless, the main attention is focused on the special case of flat space-time M1/3,14 with the scale-dependent Cantor-dust-like distribution of admissible states, such that DH increases from DH=2 on the scale ≪ℓ0 to DH=4 in the infrared limit ≫ℓ0, where ℓ0 is the characteristic length (e.g. the Planck length, or characteristic size of multi-fractal features in heterogeneous medium), whereas DS≡4 in all scales. Possible applications of approach based on the scale-dependent metric to systems of different nature are briefly discussed.

Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Di; Baek, David J.; Hong, Seung Sae

2016-08-22

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-solublemore » Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.« less

A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis.

PubMed

Park, Beomjin; Park, Jaesung; Son, Jin Gyeong; Kim, Yong-Jin; Yu, Seong Uk; Park, Hyo Ju; Chae, Dong-Hun; Byun, Jinseok; Jeon, Gumhye; Huh, Sung; Lee, Seoung-Ki; Mishchenko, Artem; Hyun, Seung; Lee, Tae Geol; Han, Sang Woo; Ahn, Jong-Hyun; Lee, Zonghoon; Hwang, Chanyong; Novoselov, Konstantin S; Kim, Kwang S; Hong, Byung Hee; Kim, Jin Kon

2015-08-25

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.

Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

PubMed

Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

2010-05-01

The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

Galilean generalized Robertson-Walker spacetimes: A new family of Galilean geometrical models

NASA Astrophysics Data System (ADS)

de la Fuente, Daniel; Rubio, Rafael M.

2018-02-01

We introduce a new family of Galilean spacetimes, the Galilean generalized Robertson-Walker spacetimes. This new family is relevant in the context of a generalized Newton-Cartan theory. We study its geometrical structure and analyse the completeness of its inextensible free falling observers. This sort of spacetimes constitutes the local geometric model of a much wider family of spacetimes admitting certain conformal symmetry. Moreover, we find some sufficient geometric conditions which guarantee a global splitting of a Galilean spacetime as a Galilean generalized Robertson-Walker spacetime.

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Canonical quantization of general relativity in discrete space-times.

PubMed

Gambini, Rodolfo; Pullin, Jorge

2003-01-17

It has long been recognized that lattice gauge theory formulations, when applied to general relativity, conflict with the invariance of the theory under diffeomorphisms. We analyze discrete lattice general relativity and develop a canonical formalism that allows one to treat constrained theories in Lorentzian signature space-times. The presence of the lattice introduces a "dynamical gauge" fixing that makes the quantization of the theories conceptually clear, albeit computationally involved. The problem of a consistent algebra of constraints is automatically solved in our approach. The approach works successfully in other field theories as well, including topological theories. A simple cosmological application exhibits quantum elimination of the singularity at the big bang.

A Linear-Elasticity Solver for Higher-Order Space-Time Mesh Deformation

NASA Technical Reports Server (NTRS)

Diosady, Laslo T.; Murman, Scott M.

2018-01-01

A linear-elasticity approach is presented for the generation of meshes appropriate for a higher-order space-time discontinuous finite-element method. The equations of linear-elasticity are discretized using a higher-order, spatially-continuous, finite-element method. Given an initial finite-element mesh, and a specified boundary displacement, we solve for the mesh displacements to obtain a higher-order curvilinear mesh. Alternatively, for moving-domain problems we use the linear-elasticity approach to solve for a temporally discontinuous mesh velocity on each time-slab and recover a continuous mesh deformation by integrating the velocity. The applicability of this methodology is presented for several benchmark test cases.

Geometry of a naked singularity created by standing waves near a Schwarzschild horizon, and its application to the binary black hole problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandel, Ilya

The most promising way to compute the gravitational waves emitted by binary black holes (BBHs) in their last dozen orbits, where post-Newtonian techniques fail, is a quasistationary approximation introduced by Detweiler and being pursued by Price and others. In this approximation the outgoing gravitational waves at infinity and downgoing gravitational waves at the holes' horizons are replaced by standing waves so as to guarantee that the spacetime has a helical Killing vector field. Because the horizon generators will not, in general, be tidally locked to the holes' orbital motion, the standing waves will destroy the horizons, converting the black holesmore » into naked singularities that resemble black holes down to near the horizon radius. This paper uses a spherically symmetric, scalar-field model problem to explore in detail the following BBH issues: (i) The destruction of a horizon by the standing waves. (ii) The accuracy with which the resulting naked singularity resembles a black hole. (iii) The conversion of the standing-wave spacetime (with a destroyed horizon) into a spacetime with downgoing waves by the addition of a 'radiation-reaction field'. (iv) The accuracy with which the resulting downgoing waves agree with the downgoing waves of a true black-hole spacetime (with horizon). The model problem used to study these issues consists of a Schwarzschild black hole endowed with spherical standing waves of a scalar field, whose wave frequency and near-horizon energy density are chosen to match those of the standing gravitational waves of the BBH quasistationary approximation. It is found that the spacetime metric of the singular, standing-wave spacetime, and its radiation-reaction-field-constructed downgoing waves are quite close to those for a Schwarzschild black hole with downgoing waves--sufficiently close to make the BBH quasistationary approximation look promising for non-tidally-locked black holes.« less

Simulation of spatially evolving turbulence and the applicability of Taylor's hypothesis in compressible flow

NASA Technical Reports Server (NTRS)

Lee, Sangsan; Lele, Sanjiva K.; Moin, Parviz

1992-01-01

For the numerical simulation of inhomogeneous turbulent flows, a method is developed for generating stochastic inflow boundary conditions with a prescribed power spectrum. Turbulence statistics from spatial simulations using this method with a low fluctuation Mach number are in excellent agreement with the experimental data, which validates the procedure. Turbulence statistics from spatial simulations are also compared to those from temporal simulations using Taylor's hypothesis. Statistics such as turbulence intensity, vorticity, and velocity derivative skewness compare favorably with the temporal simulation. However, the statistics of dilatation show a significant departure from those obtained in the temporal simulation. To directly check the applicability of Taylor's hypothesis, space-time correlations of fluctuations in velocity, vorticity, and dilatation are investigated. Convection velocities based on vorticity and velocity fluctuations are computed as functions of the spatial and temporal separations. The profile of the space-time correlation of dilatation fluctuations is explained via a wave propagation model.

Incorporation of heterostructured Sn/SnO nanoparticles in crumpled nitrogen-doped graphene nanosheets for application as anodes in lithium-ion batteries.

PubMed

Du, Fei-Hu; Liu, Yu-Si; Long, Jie; Zhu, Qian-Cheng; Wang, Kai-Xue; Wei, Xiao; Chen, Jie-Sheng

2014-09-07

Sn/SnO nanoparticles are incorporated in crumpled nitrogen-doped graphene nanosheets by a simple melting diffusion method. The resulting composite exhibits large specific capacity, excellent cycling stability and high rate capability as an anode for lithium-ion batteries.

Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro

2018-04-01

We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample with those of reference (113)A and (113)B GaAs substrates. The interfaces of GaAs/Ge/GaAs were evaluated at the atomic level by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping. Defect-free GaAs/Ge/GaAs heterostructures were observed in STEM images and the sublattice lattice was directly seen through atomic arrangements in EDX mapping. A GaAs/AlAs coupled multilayer cavity with a sublattice reversal structure was grown on the (113)B GaAs substrate after the confirmation of sublattice reversal. Smooth GaAs/AlAs interfaces were formed over the entire region of the coupled multilayer cavity structure both below and above the Ge layer. Two cavity modes with a frequency difference of 2.9 THz were clearly observed.

Optimising the visibility of graphene and graphene oxide on gold with multilayer heterostructures

NASA Astrophysics Data System (ADS)

Velický, Matěj; Hendren, William R.; Donnelly, Gavin E.; Katzen, Joel M.; Bowman, Robert M.; Huang, Fumin

2018-07-01

Metals have been increasingly used as substrates in devices based on two-dimensional (2D) materials. However, the high reflectivity of bulk metals results in low optical contrast (<3%) and therefore poor visibility of transparent mono- and few-layer 2D materials on these surfaces. Here we demonstrate that by engineering the complex reflectivity of a purpose-designed multilayer heterostructure composed of thin Au films (2–8 nm) on SiO2/Si substrate, the optical contrast of graphene and graphene oxide (GO) can be significantly enhanced in comparison to bulk Au, up to about 3 and 5 times, respectively. In particular, we achieved ∼17% optical contrast for monolayer GO, which is even 2 times higher than that on bare SiO2/Si substrate. The experimental results are in good agreement with theoretical simulations. This concept is demonstrated for Au, but the methodology is applicable to other metals and can be adopted to design a variety of high-contrast metallic substrates. This will facilitate research and applications of 2D materials in areas such as plasmonics, photonics, catalysis and sensors.

Enhanced Photoelectrochemical Water Splitting Behaviour of Tuned Band Gap CdSe QDs Sensitized LaB₆.

PubMed

Babu, M Soban; Sivanantham, A; Chakravarthi, B Barath; Kannan, R Sujith; Panda, Subhendu K; Berchmans, L John; Arya, S B; Sreedhar, Gosipathala

2017-01-01

We report the fabrication of tuned band gap quantum dots sensitized LaB₆ hybrid nanostructures and their application as a photoanode for photoelectrochemical water splitting. The lanthanum hexaboride (LaB₆) obtained by molten salt electrolysis method is sensitized with different sized CdSe quantum dots, which form a multiple-level hierarchical heterostructure and such design enhance the light absorption and charge carrier separation, which in turn showed higher photocurrent density compared to that of pristine LaB₆. When LaB₆ is sensitized with CdSe quantum dots of different band gaps, which have the absorption in the green and red (530 and 605 nm) regions in visible light, developed a ten times higher photocurrent density (11.0 mA cm(−2)) compared to that of pristine LaB6 (0.5 mA cm(−2) at 0.75 V vs. Ag/AgCl) in 1 M Na₂S electrolyte under illumination. These results prove that the tuned band gap quantum dots sensitized LaB₆ heterostructures are an ideal candidate for a photoanode in solar water splitting applications.

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials.

PubMed

Ding, Wenjun; Zhu, Jianbao; Wang, Zhe; Gao, Yanfei; Xiao, Di; Gu, Yi; Zhang, Zhenyu; Zhu, Wenguang

2017-04-07

Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In 2 Se 3 and other III 2 -VI 3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier, and In 2 Se 3 /WSe 2 , showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

PubMed Central

Ding, Wenjun; Zhu, Jianbao; Wang, Zhe; Gao, Yanfei; Xiao, Di; Gu, Yi; Zhang, Zhenyu; Zhu, Wenguang

2017-01-01

Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In2Se3 and other III2-VI3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunable Schottky barrier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications. PMID:28387225

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

NASA Astrophysics Data System (ADS)

Ding, Wenjun; Zhu, Jianbao; Wang, Zhe; Gao, Yanfei; Xiao, Di; Gu, Yi; Zhang, Zhenyu; Zhu, Wenguang

2017-04-01

Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In2Se3 and other III2-VI3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunable Schottky barrier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.

Diffraction contrast near heterostructure boundaries--its nature and its application.

PubMed

Bangert, U; Harvey, A J

1993-03-01

Two phenomena of diffraction contrast arising at or near III-V compound heterostructure boundaries are described and quantitatively analyzed. In the first observation alpha/delta-fringe contrast at boundaries inclined to the electron beam is discussed. Theoretical fringe profiles are generated according to the theory by Gevers et al. in 1964, which are then compared with experimental profiles. Applications to the characterization of AlGaAs/GaAs and InGaAsP/InP interfaces regarding composition, abruptness, and lattice tilt are presented. In the second study a new and very sensitive characterization technique for the direct determination of the strain in strained-layer structures is described. The method uses electron microscope images of 90 degrees-wedges, which exhibit a shift in the thickness contours due to strain relaxation at the edge, and compares these to images which are obtained theoretically by implementing finite element strain calculations in wedges in the dynamical theory of diffraction contrast. The considerable potential of this method is demonstrated on the strain analysis of strained GaInAs/GaAs structures.

Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

PubMed Central

Zhang, Jin; Hong, Hao; Lian, Chao; Ma, Wei; Xu, Xiaozhi; Zhou, Xu; Fu, Huixia

2017-01-01

Light‐induced interlayer ultrafast charge transfer in 2D heterostructures provides a new platform for optoelectronic and photovoltaic applications. The charge separation process is generally hypothesized to be dependent on the interlayer stackings and interactions, however, the quantitative characteristic and detailed mechanism remain elusive. Here, a systematical study on the interlayer charge transfer in model MoS2/WS2 bilayer system with variable stacking configurations by time‐dependent density functional theory methods is demonstrated. The results show that the slight change of interlayer geometry can significantly modulate the charge transfer time from 100 fs to 1 ps scale. Detailed analysis further reveals that the transfer rate in MoS2/WS2 bilayers is governed by the electronic coupling between specific interlayer states, rather than the interlayer distances, and follows a universal dependence on the state‐coupling strength. The results establish the interlayer stacking as an effective freedom to control ultrafast charge transfer dynamics in 2D heterostructures and facilitate their future applications in optoelectronics and light harvesting. PMID:28932669

Optimising the visibility of graphene and graphene oxide on gold with multilayer heterostructures.

PubMed

Velický, Matěj; Hendren, William R; Donnelly, Gavin E; Katzen, Joel M; Bowman, Robert M; Huang, Fumin

2018-07-06

Metals have been increasingly used as substrates in devices based on two-dimensional (2D) materials. However, the high reflectivity of bulk metals results in low optical contrast (<3%) and therefore poor visibility of transparent mono- and few-layer 2D materials on these surfaces. Here we demonstrate that by engineering the complex reflectivity of a purpose-designed multilayer heterostructure composed of thin Au films (2-8 nm) on SiO 2 /Si substrate, the optical contrast of graphene and graphene oxide (GO) can be significantly enhanced in comparison to bulk Au, up to about 3 and 5 times, respectively. In particular, we achieved ∼17% optical contrast for monolayer GO, which is even 2 times higher than that on bare SiO 2 /Si substrate. The experimental results are in good agreement with theoretical simulations. This concept is demonstrated for Au, but the methodology is applicable to other metals and can be adopted to design a variety of high-contrast metallic substrates. This will facilitate research and applications of 2D materials in areas such as plasmonics, photonics, catalysis and sensors.

Heterostructure of ferromagnetic and ferroelectric materials with magneto-optic and electro-optic effects

NASA Technical Reports Server (NTRS)

Zou, Yingyin Kevin (Inventor); Jiang, Hua (Inventor); Li, Kewen Kevin (Inventor); Guo, Xiaomei (Inventor)

2012-01-01

A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

NASA Astrophysics Data System (ADS)

Rout, Dipak; Kumar, Govind; Vijaya, R.

2018-01-01

A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

Imaging interfacial electrical transport in graphene–MoS{sub 2} heterostructures with electron-beam-induced-currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, E. R., E-mail: ewhite@physics.ucla.edu; Kerelsky, Alexander; Hubbard, William A.

2015-11-30

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS{sub 2} heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrentmore » collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.« less

Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

2018-02-01

Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

2017-04-01

Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

Multilevel resistance switching effect in Au/La2/3Ba1/3MnO3/Pt heterostructure manipulated by external fields

NASA Astrophysics Data System (ADS)

Wen, Jiahong; Zhao, Xiaoyu; Li, Qian; Zhang, Sheng; Wang, Dunhui; Du, Youwei

2018-04-01

Multilevel resistance switching (RS) effect has attracted more and more attention due to its promising potential for the increase of storage density in memory devices. In this work, the transport properties are investigated in an Au/La2/3Ba1/3MnO3 (LBMO)/Pt heterostructure. Taking advantage of the strong interplay among the spin, charge, orbital and lattice of LBMO, the Au/LBMO/Pt device can exhibit bipolar RS effect and magnetoresistance effect simultaneously. Under the coaction of electric field and magnetic field, four different resistance states are achieved in this device. These resistance states show excellent repeatability and retentivity and can be switched between any two states, which suggest the potential applications in the multilevel RS memory devices with enhanced storage density.

Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sata, Yohta; Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp, E-mail: tmachida@iis.u-tokyo.ac.jp; Morikawa, Sei

2015-07-13

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance ofmore » the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.« less

One-dimensional carbon nanotube@barium titanate@polyaniline multiheterostructures for microwave absorbing application

NASA Astrophysics Data System (ADS)

Ni, Qing-Qing; Zhu, Yao-Feng; Yu, Lu-Jun; Fu, Ya-Qin

2015-04-01

Multiple-phase nanocomposites filled with carbon nanotubes (CNTs) have been developed for their significant potential in microwave attenuation. The introduction of other phases onto the CNTs to achieve CNT-based heterostructures has been proposed to obtain absorbing materials with enhanced microwave absorption properties and broadband frequency due to their different loss mechanisms. The existence of polyaniline (PANI) as a coating with controllable electrical conductivity can lead to well-matched impedance. In this work, a one-dimensional CNT@BaTiO3@PANI heterostructure composite was fabricated. The fabrication processes involved coating of an acid-modified CNT with BaTiO3 (CNT@BaTiO3) through a sol-gel technique followed by combustion and the formation of CNT@BaTiO3@PANI nanohybrids by in situ polymerization of an aniline monomer in the presence of CNT@BaTiO3, using ammonium persulfate as an oxidant and HCl as a dopant. The as-synthesized CNT@BaTiO3@PANI composites with heterostructures were confirmed by various morphological and structural characterization techniques, as well as conductivity and microwave absorption properties. The measured electromagnetic parameters showed that the CNT@BaTiO3@PANI composites exhibited excellent microwave absorption properties. The minimum reflection loss of the CNT@BaTiO3@PANI composites with 20 wt % loadings in paraffin wax reached -28.9 dB (approximately 99.87% absorption) at 10.7 GHz with a thickness of 3 mm, and a frequency bandwidth less than -20 dB was achieved from 10 to 15 GHz. This work demonstrated that the CNT@BaTiO3@PANI heterostructure composite can be potentially useful in electromagnetic stealth materials, sensors, and electronic devices.

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

NASA Astrophysics Data System (ADS)

Gao, Yuanda

Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

Enhanced photo-stability and photocatalytic activity of Ag3PO4 via modification with BiPO4 and polypyrrole

NASA Astrophysics Data System (ADS)

Cai, Li; Jiang, Hui; Wang, Luxi

2017-10-01

Ag3PO4 photocatalysts modified with BiPO4 and polypyrrole (PPy) were successfully synthesized via a combination of co-precipitation hydrothermal technique and oxidative polymerization method. Their morphologies, structures and optical and electronic properties were characterized by means of scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscope (TEM), Brunauer-Emmett-Teller (BET) surface areas, X-ray diffraction (XRD), fourier transform infrared spectra (FT-IR), X-ray photo-electron spectroscopy (XPS), UV-vis diffuse reflection spectra (UV-vis DRS), photocurrent technique and electrochemical impedance spectra (EIS). The typical triphenylmethane dye (malachite green) was chosen as a target organic contaminants to estimate the photocatalytic activities and photo-stabilities of Ag3PO4-BiPO4-PPy heterostructures under visible light irradiation. The results indicated that the existence of BiPO4 and PPy not only showed great influences on the photocatalytic activity, but also significantly enhanced photo-stability of Ag3PO4 in repeated and long-term applications. The degradation conversion of Ag3PO4-BiPO4-PPy heterostructures (ABP-3) was 1.58 times of that of pure Ag3PO4. The photo-corrosion phenomenon of Ag3PO4 was effectively avoided. The photocatalytic activity of up to 87% in the Ag3PO4-BiPO4-PPy heterostructures (ABP-3) can be remained after five repeated cycles, while only about 33% of the degradation efficiency can be reserved in pure Ag3PO4. The possible mechanism of enhanced photo-stability and photocatalytic activity of Ag3PO4-BiPO4-PPy heterostructures was also discussed in this work.

One-dimensional carbon nanotube@barium titanate@polyaniline multiheterostructures for microwave absorbing application.

PubMed

Ni, Qing-Qing; Zhu, Yao-Feng; Yu, Lu-Jun; Fu, Ya-Qin

2015-01-01

Multiple-phase nanocomposites filled with carbon nanotubes (CNTs) have been developed for their significant potential in microwave attenuation. The introduction of other phases onto the CNTs to achieve CNT-based heterostructures has been proposed to obtain absorbing materials with enhanced microwave absorption properties and broadband frequency due to their different loss mechanisms. The existence of polyaniline (PANI) as a coating with controllable electrical conductivity can lead to well-matched impedance. In this work, a one-dimensional CNT@BaTiO3@PANI heterostructure composite was fabricated. The fabrication processes involved coating of an acid-modified CNT with BaTiO3 (CNT@BaTiO3) through a sol-gel technique followed by combustion and the formation of CNT@BaTiO3@PANI nanohybrids by in situ polymerization of an aniline monomer in the presence of CNT@BaTiO3, using ammonium persulfate as an oxidant and HCl as a dopant. The as-synthesized CNT@BaTiO3@PANI composites with heterostructures were confirmed by various morphological and structural characterization techniques, as well as conductivity and microwave absorption properties. The measured electromagnetic parameters showed that the CNT@BaTiO3@PANI composites exhibited excellent microwave absorption properties. The minimum reflection loss of the CNT@BaTiO3@PANI composites with 20 wt % loadings in paraffin wax reached -28.9 dB (approximately 99.87% absorption) at 10.7 GHz with a thickness of 3 mm, and a frequency bandwidth less than -20 dB was achieved from 10 to 15 GHz. This work demonstrated that the CNT@BaTiO3@PANI heterostructure composite can be potentially useful in electromagnetic stealth materials, sensors, and electronic devices.

Reduced TiO2-Graphene Oxide Heterostructure As Broad Spectrum-Driven Efficient Water-Splitting Photocatalysts.

PubMed

Li, Lihua; Yu, Lili; Lin, Zhaoyong; Yang, Guowei

2016-04-06

The reduced TiO2-graphene oxide heterostructure as an alternative broad spectrum-driven efficient water splitting photocatalyst has become a really interesting topic, however, its syntheses has many flaws, e.g., tedious experimental steps, time-consuming, small scale production, and requirement of various additives, for example, hydrazine hydrate is widely used as reductant to the reduction of graphene oxide, which is high toxicity and easy to cause the second pollution. For these issues, herein, we reported the synthesis of the reduced TiO2-graphene oxide heterostructure by a facile chemical reduction agent-free one-step laser ablation in liquid (LAL) method, which achieves extended optical response range from ultraviolet to visible and composites TiO(2-x) (reduced TiO2) nanoparticle and graphene oxide for promoting charge conducting. 30.64% Ti(3+) content in the reduced TiO2 nanoparticles induces the electronic reconstruction of TiO2, which results in 0.87 eV decrease of the band gap for the visible light absorption. TiO(2-x)-graphene oxide heterostructure achieved drastically increased photocatalytic H2 production rate, up to 23 times with respect to the blank experiment. Furthermore, a maximum H2 production rate was measured to be 16 mmol/h/g using Pt as a cocatalyst under the simulated sunlight irradiation (AM 1.5G, 135 mW/cm(2)), the quantum efficiencies were measured to be 5.15% for wavelength λ = 365 ± 10 nm and 1.84% for λ = 405 ± 10 nm, and overall solar energy conversion efficiency was measured to be 14.3%. These findings provided new insights into the broad applicability of this methodology for accessing fascinate photocatalysts.

Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

NASA Astrophysics Data System (ADS)

Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

2018-02-01

A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

Phonon-coupled ultrafast interlayer charge oscillation at van der Waals heterostructure interfaces

NASA Astrophysics Data System (ADS)

Zheng, Qijing; Xie, Yu; Lan, Zhenggang; Prezhdo, Oleg V.; Saidi, Wissam A.; Zhao, Jin

2018-05-01

Van der Waals (vdW) heterostructures of transition-metal dichalcogenide (TMD) semiconductors are central not only for fundamental science, but also for electro- and optical-device technologies where the interfacial charge transfer is a key factor. Ultrafast interfacial charge dynamics has been intensively studied, however, the atomic scale insights into the effects of the electron-phonon (e-p) coupling are still lacking. In this paper, using time dependent ab initio nonadiabatic molecular dynamics, we study the ultrafast interfacial charge transfer dynamics of two different TMD heterostructures MoS2/WS2 and MoSe2/WSe2 , which have similar band structures but different phonon frequencies. We found that MoSe2/WSe2 has softer phonon modes compared to MoS2/WS2 , and thus phonon-coupled charge oscillation can be excited with sufficient phonon excitations at room temperature. In contrast, for MoS2/WS2 , phonon-coupled interlayer charge oscillations are not easily excitable. Our study provides an atomic level understanding on how the phonon excitation and e-p coupling affect the interlayer charge transfer dynamics, which is valuable for both the fundamental understanding of ultrafast dynamics at vdW hetero-interfaces and the design of novel quasi-two-dimensional devices for optoelectronic and photovoltaic applications.

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

NASA Astrophysics Data System (ADS)

Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-03-01

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

PubMed

Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-03-08

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

Photonic slab heterostructures based on opals

NASA Astrophysics Data System (ADS)

Palacios-Lidon, Elisa; Galisteo-Lopez, Juan F.; Juarez, Beatriz H.; Lopez, Cefe

2004-09-01

In this paper the fabrication of photonic slab heterostructures based on artificial opals is presented. The innovated method combines high-quality thin-films growing of opals and silica infiltration by Chemical Vapor Deposition through a multi-step process. By varying structure parameters, such as lattice constant, sample thickness or refractive index, different heterostructures have been obtained. The optical study of these systems, carried out by reflectance and transmittance measurements, shows that the prepared samples are of high quality further confirmed by Scanning Electron Microscopy micrographs. The proposed novel method for sample preparation allows a high control of the involved structure parameters, giving the possibility of tunning their photonic behavior. Special attention in the optical response of these materials has been addressed to the study of planar defects embedded in opals, due to their importance in different photonic fields and future technological applications. Reflectance and transmission measurements show a sharp resonance due to localized states associated with the presence of planar defects. A detailed study of the defect mode position and its dependance on defect thickness and on the surrounding photonic crystal is presented as well as evidence showing the scalability of the problem. Finally, it is also concluded that the proposed method is cheap and versatile allowing the preparation of opal-based complex structures.

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Germanene on single-layer ZnSe substrate: novel electronic and optical properties.

PubMed

Ye, H Y; Hu, F F; Tang, H Y; Yang, L W; Chen, X P; Wang, L G; Zhang, G Q

2018-06-01

In this work, the structural, electronic and optical properties of germanene and ZnSe substrate nanocomposites have been investigated using first-principles calculations. We found that the large direct-gap ZnSe semiconductors and zero-gap germanene form a typical orbital hybridization heterostructure with a strong binding energy, which shows a moderate direct band gap of 0.503 eV in the most stable pattern. Furthermore, the heterostructure undergoes semiconductor-to-metal band gap transition when subjected to external out-of-plane electric field. We also found that applying external strain and compressing the interlayer distance are two simple ways of tuning the electronic structure. An unexpected indirect-direct band gap transition is also observed in the AAII pattern via adjusting the interlayer distance. Quite interestingly, the calculated results exhibit that the germanene/ZnSe heterobilayer structure has perfect optical absorption in the solar spectrum as well as the infrared and UV light zones, which is superior to that of the individual ZnSe substrate and germanene. The staggered interfacial gap and tunability of the energy band structure via interlayer distance and external electric field and strain thus make the germanene/ZnSe heterostructure a promising candidate for field effect transistors (FETs) and nanoelectronic applications.

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

PubMed Central

Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-01-01

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices. PMID:26954833

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.

PubMed

Wang, Qisheng; Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo; He, Jun

2018-04-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS 2 /PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 10 4 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS 2 to PbS. The demonstrated MoS 2 heterostructure-based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jonghwan; Jin, Chenhao; Chen, Bin

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE PAGES

Kim, Jonghwan; Jin, Chenhao; Chen, Bin; ...

2017-07-26

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Closed Conformal Killing-Yano Tensor and Uniqueness of Generalized Kerr-NUT-de Sitter Spacetime

NASA Astrophysics Data System (ADS)

Houri, Tsuyoshi

We classify all spacetimes with a rank-2 closed conformal Killing-Yano tensor. They give a generalization of Kerr-NUT-de Sitter spacetime. The Einstein condition is explicitly solved. The Kerr-NUT-de Sitter spacetime is obtained as a spacetime with a non-degenerate CKY tensor.

Space-Time Crystal and Space-Time Group

NASA Astrophysics Data System (ADS)

Xu, Shenglong; Wu, Congjun

2018-03-01

Crystal structures and the Bloch theorem play a fundamental role in condensed matter physics. We extend the static crystal to the dynamic "space-time" crystal characterized by the general intertwined space-time periodicities in D +1 dimensions, which include both the static crystal and the Floquet crystal as special cases. A new group structure dubbed a "space-time" group is constructed to describe the discrete symmetries of a space-time crystal. Compared to space and magnetic groups, the space-time group is augmented by "time-screw" rotations and "time-glide" reflections involving fractional translations along the time direction. A complete classification of the 13 space-time groups in one-plus-one dimensions (1 +1 D ) is performed. The Kramers-type degeneracy can arise from the glide time-reversal symmetry without the half-integer spinor structure, which constrains the winding number patterns of spectral dispersions. In 2 +1 D , nonsymmorphic space-time symmetries enforce spectral degeneracies, leading to protected Floquet semimetal states. We provide a general framework for further studying topological properties of the (D +1 )-dimensional space-time crystal.

Space-Time Crystal and Space-Time Group.

PubMed

Xu, Shenglong; Wu, Congjun

2018-03-02

Crystal structures and the Bloch theorem play a fundamental role in condensed matter physics. We extend the static crystal to the dynamic "space-time" crystal characterized by the general intertwined space-time periodicities in D+1 dimensions, which include both the static crystal and the Floquet crystal as special cases. A new group structure dubbed a "space-time" group is constructed to describe the discrete symmetries of a space-time crystal. Compared to space and magnetic groups, the space-time group is augmented by "time-screw" rotations and "time-glide" reflections involving fractional translations along the time direction. A complete classification of the 13 space-time groups in one-plus-one dimensions (1+1D) is performed. The Kramers-type degeneracy can arise from the glide time-reversal symmetry without the half-integer spinor structure, which constrains the winding number patterns of spectral dispersions. In 2+1D, nonsymmorphic space-time symmetries enforce spectral degeneracies, leading to protected Floquet semimetal states. We provide a general framework for further studying topological properties of the (D+1)-dimensional space-time crystal.

The science of space-time

NASA Astrophysics Data System (ADS)

Raine, D. J.; Heller, M.

Analyzing the development of the structure of space-time from the theory of Aristotle to the present day, the present work attempts to sketch a science of relativistic mechanics. The concept of relativity is discussed in relation to the way in which space-time splits up into space and time, and in relation to Mach's principle concerning the relativity of inertia. Particular attention is given to the following topics: Aristotelian dynamics; Copernican kinematics; Newtonian dynamics; the space-time of classical dynamics; classical space-time in the presence of gravity; the space-time of special relativity; the space-time of general relativity; solutions and problems in general relativity; Mach's principle and the dynamics of space-time; theories of inertial mass; the integral formation of general relativity; and the frontiers of relativity (e.g., unified field theories and quantum gravity).

Two-Dimensional Heterostructure as a Platform for Surface-Enhanced Raman Scattering.

PubMed

Tan, Yang; Ma, Linan; Gao, Zhibin; Chen, Ming; Chen, Feng

2017-04-12

Raman enhancement on a flat nonmetallic surface has attracted increasing attention, ever since the discovery of graphene enhanced Raman scattering. Recently, diverse two-dimensional layered materials have been applied as a flat surface for the Raman enhancement, attributed to different mechanisms. Looking beyond these isolated materials, atomic layers can be reassembled to design a heterostructure stacked layer by layer with an arbitrary chosen sequence, which allows the flow of charge carriers between neighboring layers and offers novel functionalities. Here, we demonstrate the heterostructure as a novel Raman enhancement platform. The WSe 2 (W) monolayer and graphene (G) were stacked together to form a heterostructure with an area of 10 mm × 10 mm. Heterostructures with different stacked structuress are used as platforms for the enhanced Raman scattering, including G/W, W/G, G/W/G/W, and W/G/G/W. On the surface of the heterostructure, the intensity of the Raman scattering is much stronger compared with isolated layers, using the copper phthalocyanine (CuPc) molecule as a probe. It is found that the Raman enhancement effect on heterostructures depends on stacked methods. Phonon modes of CuPc have the strongest enhancement on G/W. W/G and W/G/G/W have a stronger enhancement than that on the isolated WSe 2 monolayer, while lower than the graphene monolayer. The G/W/G/W/substrate demonstrated a comparable Raman enhancement effect than the G/W/substrate. These differences are due to the different interlayer couplings in heterostructures related to electron transition probability rates, which are further proved by first-principle calculations and probe-pump measurements.

Electronic Transport in Ultrathin Heterostructures.

DTIC Science & Technology

1981-10-01

heterostructures, superlattices, diffusion-enhanced disorder, transport properties, molecular beam epitaxy (MBE), photoluminescence, optical absorption...tion of single and multilayer GatlAs/GaAs heterostructures by metalorganic chemical vapor deposition (MJCVD) and molecular beam epitaxy (MBE) has...fundamental nature of these clusters and their relevance to other epitaxial techniques such as molecular beam epitaxy (MBE). To further varify or

Optimization of Microelectronic Devices for Sensor Applications

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

2000-01-01

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Degradation of Si/Ge core/shell nanowire heterostructures during lithiation and delithiation at 0.8 and 20 A g-1.

PubMed

Kim, Dongheun; Li, Nan; Sheehan, Chris J; Yoo, Jinkyoung

2018-04-26

Si/Ge core/shell nanowire heterostructures have been expected to provide high energy and power densities for lithium ion battery anodes due to the large capacity of Si and the high electrical and ionic conductivities of Ge. Although the battery anode performances of Si/Ge core/shell nanowire heterostructures have been characterized, the degradation of Si/Ge core/shell nanowire heterostructures has not been thoroughly investigated. Here we report the compositional and structural changes of the Si/Ge core/shell nanowire heterostructure over cycling of lithiation and delithiation at different charging rates. The Si/Ge core/shell nanowire heterostructure holds the core and shell structure at a charging rate of 0.8 A g-1 up to 50 cycles. On the other hand, compositional intermixing and loss of Si occur at a charging rate of 20 A g-1 within 50 cycles. The operation condition-dependent degradation provides a new aspect of materials research for the development of high performance lithium ion battery anodes with a long cycle life.

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

DOE PAGES

Lu, Di; Baek, David J.; Hong, Seung Sae; ...

2016-09-12

Here, the ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals 1, 2, 3, 4, 5, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality 6, 7, 8, 9 and emergent phenomena, as seen in perovskite heterostructures 10, 11, 12. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general methodmore » to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds 13, 14.« less

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.

PubMed

Liu, Baodan; Yang, Bing; Yuan, Fang; Liu, Qingyun; Shi, Dan; Jiang, Chunhai; Zhang, Jinsong; Staedler, Thorsten; Jiang, Xin

2015-12-09

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.

Analysis of the auger recombination rate in P+N-n-N-N HgCdTe detectors for HOT applications

NASA Astrophysics Data System (ADS)

Schuster, J.; Tennant, W. E.; Bellotti, E.; Wijewarnasuriya, P. S.

2016-05-01

Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or "AL"). A variant of this architecture, the P+N-n-N-N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N-n-N-N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term "recombination rate" for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N-n-N-N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be utilized to predict and understand the device operation, as analytical models do not exist for heterojunction devices.

High-Resolution Genuinely Multidimensional Solution of Conservation Laws by the Space-Time Conservation Element and Solution Element Method

NASA Technical Reports Server (NTRS)

Himansu, Ananda; Chang, Sin-Chung; Yu, Sheng-Tao; Wang, Xiao-Yen; Loh, Ching-Yuen; Jorgenson, Philip C. E.

1999-01-01

In this overview paper, we review the basic principles of the method of space-time conservation element and solution element for solving the conservation laws in one and two spatial dimensions. The present method is developed on the basis of local and global flux conservation in a space-time domain, in which space and time are treated in a unified manner. In contrast to the modern upwind schemes, the approach here does not use the Riemann solver and the reconstruction procedure as the building blocks. The drawbacks of the upwind approach, such as the difficulty of rationally extending the 1D scalar approach to systems of equations and particularly to multiple dimensions is here contrasted with the uniformity and ease of generalization of the Conservation Element and Solution Element (CE/SE) 1D scalar schemes to systems of equations and to multiple spatial dimensions. The assured compatibility with the simplest type of unstructured meshes, and the uniquely simple nonreflecting boundary conditions of the present method are also discussed. The present approach has yielded high-resolution shocks, rarefaction waves, acoustic waves, vortices, ZND detonation waves, and shock/acoustic waves/vortices interactions. Moreover, since no directional splitting is employed, numerical resolution of two-dimensional calculations is comparable to that of the one-dimensional calculations. Some sample applications displaying the strengths and broad applicability of the CE/SE method are reviewed.

GNSS Space-Time Interference Mitigation and Attitude Determination in the Presence of Interference Signals

PubMed Central

Daneshmand, Saeed; Jahromi, Ali Jafarnia; Broumandan, Ali; Lachapelle, Gérard

2015-01-01

The use of Space-Time Processing (STP) in Global Navigation Satellite System (GNSS) applications is gaining significant attention due to its effectiveness for both narrowband and wideband interference suppression. However, the resulting distortion and bias on the cross correlation functions due to space-time filtering is a major limitation of this technique. Employing the steering vector of the GNSS signals in the filter structure can significantly reduce the distortion on cross correlation functions and lead to more accurate pseudorange measurements. This paper proposes a two-stage interference mitigation approach in which the first stage estimates an interference-free subspace before the acquisition and tracking phases and projects all received signals into this subspace. The next stage estimates array attitude parameters based on detecting and employing GNSS signals that are less distorted due to the projection process. Attitude parameters enable the receiver to estimate the steering vector of each satellite signal and use it in the novel distortionless STP filter to significantly reduce distortion and maximize Signal-to-Noise Ratio (SNR). GPS signals were collected using a six-element antenna array under open sky conditions to first calibrate the antenna array. Simulated interfering signals were then added to the digitized samples in software to verify the applicability of the proposed receiver structure and assess its performance for several interference scenarios. PMID:26016909

GNSS space-time interference mitigation and attitude determination in the presence of interference signals.

PubMed

Daneshmand, Saeed; Jahromi, Ali Jafarnia; Broumandan, Ali; Lachapelle, Gérard

2015-05-26

The use of Space-Time Processing (STP) in Global Navigation Satellite System (GNSS) applications is gaining significant attention due to its effectiveness for both narrowband and wideband interference suppression. However, the resulting distortion and bias on the cross correlation functions due to space-time filtering is a major limitation of this technique. Employing the steering vector of the GNSS signals in the filter structure can significantly reduce the distortion on cross correlation functions and lead to more accurate pseudorange measurements. This paper proposes a two-stage interference mitigation approach in which the first stage estimates an interference-free subspace before the acquisition and tracking phases and projects all received signals into this subspace. The next stage estimates array attitude parameters based on detecting and employing GNSS signals that are less distorted due to the projection process. Attitude parameters enable the receiver to estimate the steering vector of each satellite signal and use it in the novel distortionless STP filter to significantly reduce distortion and maximize Signal-to-Noise Ratio (SNR). GPS signals were collected using a six-element antenna array under open sky conditions to first calibrate the antenna array. Simulated interfering signals were then added to the digitized samples in software to verify the applicability of the proposed receiver structure and assess its performance for several interference scenarios.

Quantum engineering of transistors based on 2D materials heterostructures

NASA Astrophysics Data System (ADS)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE PAGES

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.; ...

2017-06-19

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Quantum engineering of transistors based on 2D materials heterostructures.

PubMed

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Two-dimensional spinodal interface in one-step grown graphene-molybdenum carbide heterostructures

NASA Astrophysics Data System (ADS)

Qiao, Jia-Bin; Gong, Yue; Liu, Haiwen; Shi, Jin-An; Gu, Lin; He, Lin

2018-05-01

Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report the observation of a two-dimensional (2D) spinodal interface in graphene-molybdenum carbide (α -M o2C ) heterostructures, which arises from spinodal decomposition occurring at the heterointerface, by using scanning tunneling microscopy. Our experiment demonstrates that the 2D spinodal interface modulates graphene into whispering gallery resonant networks filled with quasibound states of massless Dirac fermions. Moreover, below the superconducting transition temperature of the underlying α -M o2C , the 2D spinodal interface behaves as disorders, resulting in the breakdown of the proximity-induced superconductivity in graphene. Our result sheds light on tuning properties of heterostructures based on interface engineering.

Controlled fabrication of photoactive copper oxide-cobalt oxide nanowire heterostructures for efficient phenol photodegradation.

PubMed

Shi, Wenwu; Chopra, Nitin

2012-10-24

Fabrication of oxide nanowire heterostructures with controlled morphology, interface, and phase purity is critical for high-efficiency and low-cost photocatalysis. Here, we have studied the formation of copper oxide-cobalt nanowire heterostructures by sputtering and subsequent air annealing to result in cobalt oxide (Co(3)O(4))-coated CuO nanowires. This approach allowed fabrication of standing nanowire heterostructures with tunable compositions and morphologies. The vertically standing CuO nanowires were synthesized in a thermal growth method. The shell growth kinetics of Co and Co(3)O(4) on CuO nanowires, morphological evolution of the shell, and nanowire self-shadowing effects were found to be strongly dependent on sputtering duration, air-annealing conditions, and alignment of CuO nanowires. Finite element method (FEM) analysis indicated that alignment and stiffness of CuO-Co nanowire heterostructures greatly influenced the nanomechanical aspects such as von Mises equivalent stress distribution and bending of nanowire heterostructures during the Co deposition process. This fundamental knowledge was critical for the morphological control of Co and Co(3)O(4) on CuO nanowires with desired interfaces and a uniform coating. Band gap energies and phenol photodegradation capability of CuO-Co(3)O(4) nanowire heterostructures were studied as a function of Co(3)O(4) morphology. Multiple absorption edges and band gap tailings were observed for these heterostructures, indicating photoactivity from visible to UV range. A polycrystalline Co(3)O(4) shell on CuO nanowires showed the best photodegradation performance (efficiency ~50-90%) in a low-powered UV or visible light illumination with a sacrificial agent (H(2)O(2)). An anomalously high efficiency (~67.5%) observed under visible light without sacrificial agent for CuO nanowires coated with thin (∼5.6 nm) Co(3)O(4) shell and nanoparticles was especially interesting. Such photoactive heterostructures demonstrate unique sacrificial agent-free, robust, and efficient photocatalysts promising for organic decontamination and environmental remediation.

Light deflection and Gauss-Bonnet theorem: definition of total deflection angle and its applications

NASA Astrophysics Data System (ADS)

Arakida, Hideyoshi

2018-05-01

In this paper, we re-examine the light deflection in the Schwarzschild and the Schwarzschild-de Sitter spacetime. First, supposing a static and spherically symmetric spacetime, we propose the definition of the total deflection angle α of the light ray by constructing a quadrilateral Σ^4 on the optical reference geometry M^opt determined by the optical metric \\bar{g}_{ij}. On the basis of the definition of the total deflection angle α and the Gauss-Bonnet theorem, we derive two formulas to calculate the total deflection angle α ; (1) the angular formula that uses four angles determined on the optical reference geometry M^opt or the curved (r, φ ) subspace M^sub being a slice of constant time t and (2) the integral formula on the optical reference geometry M^opt which is the areal integral of the Gaussian curvature K in the area of a quadrilateral Σ ^4 and the line integral of the geodesic curvature κ _g along the curve C_{Γ}. As the curve C_{Γ}, we introduce the unperturbed reference line that is the null geodesic Γ on the background spacetime such as the Minkowski or the de Sitter spacetime, and is obtained by projecting Γ vertically onto the curved (r, φ ) subspace M^sub. We demonstrate that the two formulas give the same total deflection angle α for the Schwarzschild and the Schwarzschild-de Sitter spacetime. In particular, in the Schwarzschild case, the result coincides with Epstein-Shapiro's formula when the source S and the receiver R of the light ray are located at infinity. In addition, in the Schwarzschild-de Sitter case, there appear order O(Lambda;m) terms in addition to the Schwarzschild-like part, while order O(Λ) terms disappear.

Spacetime and orbits of bumpy black holes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vigeland, Sarah J.; Hughes, Scott A.

2010-01-15

Our Universe contains a great number of extremely compact and massive objects which are generally accepted to be black holes. Precise observations of orbital motion near candidate black holes have the potential to determine if they have the spacetime structure that general relativity demands. As a means of formulating measurements to test the black hole nature of these objects, Collins and Hughes introduced ''bumpy black holes'': objects that are almost, but not quite, general relativity's black holes. The spacetimes of these objects have multipoles that deviate slightly from the black hole solution, reducing to black holes when the deviation ismore » zero. In this paper, we extend this work in two ways. First, we show how to introduce bumps which are smoother and lead to better behaved orbits than those in the original presentation. Second, we show how to make bumpy Kerr black holes--objects which reduce to the Kerr solution when the deviation goes to zero. This greatly extends the astrophysical applicability of bumpy black holes. Using Hamilton-Jacobi techniques, we show how a spacetime's bumps are imprinted on orbital frequencies, and thus can be determined by measurements which coherently track the orbital phase of a small orbiting body. We find that in the weak field, orbits of bumpy black holes are modified exactly as expected from a Newtonian analysis of a body with a prescribed multipolar structure, reproducing well-known results from the celestial mechanics literature. The impact of bumps on strong-field orbits is many times greater than would be predicted from a Newtonian analysis, suggesting that this framework will allow observations to set robust limits on the extent to which a spacetime's multipoles deviate from the black hole expectation.« less

Temperature dependence of material gain of InGaAsP/InP nano-heterostructure

NASA Astrophysics Data System (ADS)

Yadav, Rashmi; Alvi, P. A.

2014-04-01

This paper deals with temperature dependent study on material gain of InGaAsP/InP lasing nano-heterostructure with in TE mode. The model is based on simple separate confinement heterostructure (SCH). Material gain for the structure has been simulated for below and above the room temperatures. Different behaviors of the material gain for both ranges of the temperature have been reported in this paper. The results obtained in the simulation of the heterostructures suggest that only the shift in maximum gain takes place that appears at the lasing wavelength ˜ 1.40 μm.

Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Shisheng, E-mail: shishenglin@zju.edu.cn; Chen, Hongsheng; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027

2015-11-09

We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The science of space-time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raine, D.J.; Heller, M.

1981-01-01

Analyzing the development of the structure of space-time from the theory of Aristotle to the present day, the present work attempts to sketch a science of relativistic mechanics. The concept of relativity is discussed in relation to the way in which space-time splits up into space and time, and in relation to Mach's principle concerning the relativity of inertia. Particular attention is given to the following topics: Aristotelian dynamics Copernican kinematics Newtonian dynamics the space-time of classical dynamics classical space-time in the presence of gravity the space-time of special relativity the space-time of general relativity solutions and problems in generalmore » relativity Mach's principle and the dynamics of space-time theories of inertial mass the integral formation of general relativity and the frontiers of relativity (e.g., unified field theories and quantum gravity).« less

Graphitic carbon nitride based nanocomposites: a review

NASA Astrophysics Data System (ADS)

Zhao, Zaiwang; Sun, Yanjuan; Dong, Fan

2014-11-01

Graphitic carbon nitride (g-C3N4), as an intriguing earth-abundant visible light photocatalyst, possesses a unique two-dimensional structure, excellent chemical stability and tunable electronic structure. Pure g-C3N4 suffers from rapid recombination of photo-generated electron-hole pairs resulting in low photocatalytic activity. Because of the unique electronic structure, the g-C3N4 could act as an eminent candidate for coupling with various functional materials to enhance the performance. According to the discrepancies in the photocatalytic mechanism and process, six primary systems of g-C3N4-based nanocomposites can be classified and summarized: namely, the g-C3N4 based metal-free heterojunction, the g-C3N4/single metal oxide (metal sulfide) heterojunction, g-C3N4/composite oxide, the g-C3N4/halide heterojunction, g-C3N4/noble metal heterostructures, and the g-C3N4 based complex system. Apart from the depiction of the fabrication methods, heterojunction structure and multifunctional application of the g-C3N4-based nanocomposites, we emphasize and elaborate on the underlying mechanisms in the photocatalytic activity enhancement of g-C3N4-based nanocomposites. The unique functions of the p-n junction (semiconductor/semiconductor heterostructures), the Schottky junction (metal/semiconductor heterostructures), the surface plasmon resonance (SPR) effect, photosensitization, superconductivity, etc. are utilized in the photocatalytic processes. Furthermore, the enhanced performance of g-C3N4-based nanocomposites has been widely employed in environmental and energetic applications such as photocatalytic degradation of pollutants, photocatalytic hydrogen generation, carbon dioxide reduction, disinfection, and supercapacitors. This critical review ends with a summary and some perspectives on the challenges and new directions in exploring g-C3N4-based advanced nanomaterials.

Carrier Localization in Confined Vanadate Superlattices

NASA Astrophysics Data System (ADS)

Eaton, Craig; Zhang, Lei; Engel-Herbert, Roman

2015-03-01

Perovskite oxide heterostructures have attracted attention due to the wealth of phenomena emerging at the interface, as well as the presence of strong electron correlations with potential applications as active electronic material for logic application utilizing the metal-to-insulator transition. Successful monolithic integration of perovskite oxides with Si makes them an ideal material choice. Here we present the growth of cubic SrTiO3/SrVO3/SrTiO3 heterostructures on (La0.3Sr0.7) (Al0.65Ta0.35) O3 substrates and orthorhombically distorted CaTiO3/CaVO3/CaTiO3 heterostructures on (LaSrAlTa4) O3 substrates by hybrid molecular beam epitaxy, where alkaline earth metals were supplied using conventional effusion cells and the transition metals from the metal-organic precursor titanium-isopropoxide and vanadium oxi-tri-isopropoxide. Here, the interfaces are non-polar and carrier confinement in the correlated vanadate metals (d1 configuration, 1 electron per unit cell) is achieved using insulating titanates as barrier material. Growth challenges associated with optimizing conditions for cation and oxygen stoichiometry are discussed. Confined structures down to 2 ML have been studied to demonstrate the potential for tuning incipient 2D Mott transition from 3D correlated metal. Room temperature hall measurements revealed carrier concentration in SrVO3 films are 2 × 1022 cm-3 in thick films and decreases to 8 × 1020 cm-3 at 3 ML confinement, revealing the onset of strong carrier localization. Direct comparison between SrVO3 and CaVO3 structures are presented to elucidate the role of dimensional confinement and structural distortion.

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Constant scalar curvature hypersurfaces in (3 + 1) -dimensional GHMC Minkowski spacetimes

NASA Astrophysics Data System (ADS)

Smith, Graham

2018-06-01

We prove that every (3 + 1) -dimensional flat GHMC Minkowski spacetime which is not a translation spacetime or a Misner spacetime carries a unique foliation by spacelike hypersurfaces of constant scalar curvature. In other words, we prove that every such spacetime carries a unique time function with isochrones of constant scalar curvature. Furthermore, this time function is a smooth submersion.

Gravitational tension, spacetime pressure and black hole volume

NASA Astrophysics Data System (ADS)

Armas, Jay; Obers, Niels A.; Sanchioni, Marco

2016-09-01

We study the first law of black hole thermodynamics in the presence of surrounding gravitational fields and argue that variations of these fields are naturally incorporated in the first law by defining gravitational tension or gravitational binding energy. We demonstrate that this notion can also be applied in Anti-de Sitter spacetime, in which the surrounding gravitational field is sourced by a cosmological fluid, therefore showing that spacetime volume and gravitational tension encode the same physics as spacetime pressure and black hole volume. We furthermore show that it is possible to introduce a definition of spacetime pressure and black hole volume for any spacetime with characteristic length scales which does not necessarily require a cosmological constant sourcing Einstein equations. However, we show that black hole volume is non-universal in the flat spacetime limit, questioning its significance. We illustrate these ideas by studying the resulting black hole volume of Kaluza-Klein black holes and of a toy model for a black hole binary system in five spacetime dimensions (the black saturn solution) as well as of several novel perturbative black hole solutions. These include the higher-dimensional Kerr-Newman solution in Anti-de Sitter spacetime as well as other black holes in plane wave and Lifshitz spacetimes.

The application of prototype point processes for the summary and description of California wildfires

USGS Publications Warehouse

Nichols, K.; Schoenberg, F.P.; Keeley, J.E.; Bray, A.; Diez, D.

2011-01-01

A method for summarizing repeated realizations of a space-time marked point process, known as prototyping, is discussed and applied to catalogues of wildfires in California. Prototype summaries are constructed for varying time intervals using California wildfire data from 1990 to 2006. Previous work on prototypes for temporal and space-time point processes is extended here to include methods for computing prototypes with marks and the incorporation of prototype summaries into hierarchical clustering algorithms, the latter of which is used to delineate fire seasons in California. Other results include summaries of patterns in the spatial-temporal distribution of wildfires within each wildfire season. ?? 2011 Blackwell Publishing Ltd.

Simple-random-sampling-based multiclass text classification algorithm.

PubMed

Liu, Wuying; Wang, Lin; Yi, Mianzhu

2014-01-01

Multiclass text classification (MTC) is a challenging issue and the corresponding MTC algorithms can be used in many applications. The space-time overhead of the algorithms must be concerned about the era of big data. Through the investigation of the token frequency distribution in a Chinese web document collection, this paper reexamines the power law and proposes a simple-random-sampling-based MTC (SRSMTC) algorithm. Supported by a token level memory to store labeled documents, the SRSMTC algorithm uses a text retrieval approach to solve text classification problems. The experimental results on the TanCorp data set show that SRSMTC algorithm can achieve the state-of-the-art performance at greatly reduced space-time requirements.

Location-oblivious data transfer with flying entangled qudits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kent, Adrian

2011-07-15

We present a simple and practical quantum protocol involving two mistrustful agencies in Minkowski space, which allows Alice to transfer data to Bob at a space-time location that neither can predict in advance. The location depends on both Alice's and Bob's actions. The protocol guarantees unconditionally to Alice that Bob learns the data at a randomly determined location; it guarantees to Bob that Alice will not learn the transfer location even after the protocol is complete. The task implemented, transferring data at a space-time location that remains hidden from the transferrer, has no precise analog in nonrelativistic quantum cryptography. Itmore » illustrates further the scope for novel cryptographic applications of relativistic quantum theory.« less

An Optoelectronics Research Center

DTIC Science & Technology

2006-03-08

compared with a -2 mm wide slab, -200 nrn thick silicon (SOl) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and...acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the...application areas including: nanoscale epitaxial growth for semiconductor heterostructures; nanofluidics for biological separations; nanomagnetics for

Voronoi distance based prospective space-time scans for point data sets: a dengue fever cluster analysis in a southeast Brazilian town

PubMed Central

2011-01-01

Background The Prospective Space-Time scan statistic (PST) is widely used for the evaluation of space-time clusters of point event data. Usually a window of cylindrical shape is employed, with a circular or elliptical base in the space domain. Recently, the concept of Minimum Spanning Tree (MST) was applied to specify the set of potential clusters, through the Density-Equalizing Euclidean MST (DEEMST) method, for the detection of arbitrarily shaped clusters. The original map is cartogram transformed, such that the control points are spread uniformly. That method is quite effective, but the cartogram construction is computationally expensive and complicated. Results A fast method for the detection and inference of point data set space-time disease clusters is presented, the Voronoi Based Scan (VBScan). A Voronoi diagram is built for points representing population individuals (cases and controls). The number of Voronoi cells boundaries intercepted by the line segment joining two cases points defines the Voronoi distance between those points. That distance is used to approximate the density of the heterogeneous population and build the Voronoi distance MST linking the cases. The successive removal of edges from the Voronoi distance MST generates sub-trees which are the potential space-time clusters. Finally, those clusters are evaluated through the scan statistic. Monte Carlo replications of the original data are used to evaluate the significance of the clusters. An application for dengue fever in a small Brazilian city is presented. Conclusions The ability to promptly detect space-time clusters of disease outbreaks, when the number of individuals is large, was shown to be feasible, due to the reduced computational load of VBScan. Instead of changing the map, VBScan modifies the metric used to define the distance between cases, without requiring the cartogram construction. Numerical simulations showed that VBScan has higher power of detection, sensitivity and positive predicted value than the Elliptic PST. Furthermore, as VBScan also incorporates topological information from the point neighborhood structure, in addition to the usual geometric information, it is more robust than purely geometric methods such as the elliptic scan. Those advantages were illustrated in a real setting for dengue fever space-time clusters. PMID:21513556

Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

NASA Astrophysics Data System (ADS)

Singh, A. K.; Rathi, Amit; Riyaj, Md.; Bhardwaj, Garima; Alvi, P. A.

2017-11-01

Quaternary and ternary alloy semiconductors offer an extra degree of flexibility in terms of bandgap tuning. Modifications in the wave functions and alterations in optical transitions in quaternary and ternary QW (quantum well) heterostructures due to external uniaxial strain provide valuable insights on the characteristics of the heterostructure. This paper reports the optical gain in strained InGaAsP/GaAsSb type-II QW heterostructure (well width = 20 Å) under external uniaxial strain at room temperature (300 K). The entire heterostructure is supposed to be grown on InP substrate pseudomorphically. Band structure, wave functions, energy dispersion and momentum matrix elements of the heterostructure have been computed. 6 × 6 diagonalised k → ·p → Hamiltonian matrix of the system is evaluated and Luttinger-Kohn model has been applied for the band structure and wavefunction calculations. TE mode optical gain spectrum in the QW-heterostructure under uniaxial strain along [110] is calculated. Optical gain of the heterostructure as a function of 2D carrier density and temperature variation is investigated. The variation of the peak optical gain as a function of As and Sb fractions in InGaAsP as a barrier and GaAsSb as a well respectively is exhibited. For a charge carrier injection of 5 ×1012 /cm2 , the TE optical gain is 3952 cm-1 at room temperature under no external uniaxial strain. Significant increase in TE mode optical gain is observed under high external uniaxial strain (1, 5 and 10 GPa) along [110] within IR (Infrared region) region.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Picraux, Samuel T; Dayeh, Shadi A

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5}more » I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.« less

Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Ashish; Barth, Michael; Madan, Himanshu

2014-08-04

Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSbmore » for future technology node.« less

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

Gas Sensing Properties of p-Co₃O₄/n-TiO₂ Nanotube Heterostructures.

PubMed

Alev, Onur; Kılıç, Alp; Çakırlar, Çiğdem; Büyükköse, Serkan; Öztürk, Zafer Ziya

2018-03-23

In this paper, we fabricated p-Co₃O₄/n-TiO₂ heterostructures and investigated their gas sensing properties. The structural and morphological characterization were performed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy analysis (XPS). The electrical properties of the heterostructure were studied within the temperature range from 293 K to 423 K. Changes in electrical properties and sensing behavior against reducing and oxidizing gases were attributed to the formation of p-n heterojunctions at the Co₃O₄ and TiO₂ interface. In comparison with sensing performed with pristine TiO₂ nanotubes (NTs), a significant improvement in H₂ sensing at 200 °C was observed, while the sensing response against NO₂ decreased for the heterostructures. Additionally, a response against toluene gas, in contrast to pristine TiO₂ NTs, appeared in the Co₃O₄/TiO₂ heterostructure samples.

Photocatalytic reduction of CO2 by employing ZnO/Ag1-xCux/CdS and related heterostructures

NASA Astrophysics Data System (ADS)

Lingampalli, S. R.; Ayyub, Mohd Monis; Magesh, Ganesan; Rao, C. N. R.

2018-01-01

In view of the great importance of finding ways to reduce CO2 by using solar energy, we have examined the advantage of employing heterostructures containing bimetallic alloys for the purpose. This choice is based on the knowledge that metals such as Pt reduce CO2, although the activity may not be considerable. Our studies on the reduction of CO2 by ZnO/M/CdS (M = Ag, Au, Ag1-xAux, Ag1-xCux) heterostructures in liquid phase have shown good results specially in the case of ZnO/Ag1-xCux/CdS, reaching a CO production activity of 327.4 μmol h-1 g-1. The heterostructures also reduce CO2 in the gas-phase although the production activity is not high. Some of the heterostructures exhibit reduction of CO2 even in the absence of a sacrificial reagent.

Synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures and their electrical and field-emission properties.

PubMed

Lin, Jing; Huang, Yang; Bando, Yoshio; Tang, Chengchun; Li, Chun; Golberg, Dmitri

2010-04-27

We report on the synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In2O3 nanowire forms a sort of a "dorsal fin" on the Ga2O3 nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (approximately 1.31 V/microm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In2O3-decorated Ga2O3 heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

PubMed

Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

2016-08-10

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

NASA Astrophysics Data System (ADS)

Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

2012-10-01

Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

Gravitational Lensing from a Spacetime Perspective.

PubMed

Perlick, Volker

2004-01-01

The theory of gravitational lensing is reviewed from a spacetime perspective, without quasi-Newtonian approximations. More precisely, the review covers all aspects of gravitational lensing where light propagation is described in terms of lightlike geodesics of a metric of Lorentzian signature. It includes the basic equations and the relevant techniques for calculating the position, the shape, and the brightness of images in an arbitrary general-relativistic spacetime. It also includes general theorems on the classification of caustics, on criteria for multiple imaging, and on the possible number of images. The general results are illustrated with examples of spacetimes where the lensing features can be explicitly calculated, including the Schwarzschild spacetime, the Kerr spacetime, the spacetime of a straight string, plane gravitational waves, and others.

Uniqueness of complete maximal hypersurfaces in spatially parabolic generalized Robertson-Walker spacetimes

NASA Astrophysics Data System (ADS)

Romero, Alfonso; Rubio, Rafael M.; Salamanca, Juan J.

2013-06-01

A new technique for the study of noncompact complete spacelike hypersurfaces in generalized Robertson-Walker (GRW) spacetimes whose fiber is a parabolic Riemannian manifold is introduced. This class of spacetimes allows us to model open universes which extend to spacelike closed GRW spacetimes from the viewpoint of the geometric analysis of the fiber, and which, unlike those spacetimes, could be compatible with the holographic principle. First, under reasonable assumptions on the restriction of the warping function to the spacelike hypersurface and on the hyperbolic angle between the unit normal vector field and a certain timelike vector field, a complete spacelike hypersurface in a spatially parabolic GRW spacetime is shown to be parabolic, and the existence of a simply connected parabolic spacelike hypersurface in a GRW spacetime also leads to the parabolicity of its fiber. Then, all the complete maximal hypersurfaces in spatially parabolic GRW spacetimes are determined in several cases, extending, in particular, to this family of open cosmological models several well-known uniqueness results for the case of spatially closed GRW spacetimes. Moreover, new Calabi-Bernstein problems are solved.

Recent advances in 2D materials for photocatalysis.

PubMed

Luo, Bin; Liu, Gang; Wang, Lianzhou

2016-04-07

Two-dimensional (2D) materials have attracted increasing attention for photocatalytic applications because of their unique thickness dependent physical and chemical properties. This review gives a brief overview of the recent developments concerning the chemical synthesis and structural design of 2D materials at the nanoscale and their applications in photocatalytic areas. In particular, recent progress on the emerging strategies for tailoring 2D material-based photocatalysts to improve their photo-activity including elemental doping, heterostructure design and functional architecture assembly is discussed.

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

PubMed

Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

2016-11-29

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Mangin, S.; Gottwald, M.; Lambert, C.-H.; Steil, D.; Uhlíř, V.; Pang, L.; Hehn, M.; Alebrand, S.; Cinchetti, M.; Malinowski, G.; Fainman, Y.; Aeschlimann, M.; Fullerton, E. E.

2014-03-01

The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

Giant switchable Rashba effect in oxide heterostructures

DOE PAGES

Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; ...

2015-03-01

One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

PubMed Central

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-01-01

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe{sub 2} heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Anyuan; Liu, Erfu; Long, Mingsheng

2016-05-30

We studied electrical transport properties including gate-tunable rectification inversion and polarity inversion, in atomically thin graphene/WSe{sub 2} heterojunctions. Such engrossing characteristics are attributed to the gate tunable mismatch of Fermi levels of graphene and WSe{sub 2}. Also, such atomically thin heterostructure shows excellent performances on photodetection. The responsivity of 66.2 mA W{sup −1} (without bias voltage) and 350 A W{sup −1} (with 1 V bias voltage) can be reached. What is more, the devices show great external quantum efficiency of 800%, high detectivity of 10{sup 13} cm Hz{sup 1/2}/W, and fast response time of 30 μs. Our study reveals that vertical stacking of 2D materials has great potentialmore » for multifunctional electronic and optoelectronic device applications in the future.« less

Toward highly efficient electrocatalyst for Li–O 2 batteries using biphasic N-doping cobalt@graphene multiple-capsule heterostructures

DOE PAGES

Tan, Guoqiang; Chong, Lina; Amine, Rachid; ...

2017-04-12

To promote lithium-oxygen batteries available for practical applications, the development of advanced cathode catalysts with low-cost, high activity and stable structural properties is demanded. Such development is rooted on certain intelligent catalyst-electrode design that fundamentally facilitates electronic and ionic transport, and improves oxygen diffusivity in a porous environment. Here we design a biphasic nitrogen-doped cobalt@graphene multiple-capsule heterostructure, combined with a flexible, stable porous electrode architecture, and apply it as promising cathodes for lithium-oxygen cells. The biphasic nitrogen-doping feature improves the electric conductivity and catalytic activity; the multiple-nanocapsule configuration makes high/uniform electro-active zones possible; furthermore, the colander-like porous electrode facilitates themore » oxygen diffusion, catalytic reaction, and stable deposition of discharge products. Finally, the electrode exhibits much improved electrocatalytic properties associated with unique morphologies of electrochemically grown lithium peroxides.« less

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

NASA Astrophysics Data System (ADS)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures

NASA Astrophysics Data System (ADS)

Yan, Lifan; Hazari, Arnab; Bhattacharya, Pallab; Millunchick, Joanna M.

2018-02-01

We have investigated the structure and shape of GaN-based nanowires grown on (001) Si substrates for optoelectronic device applications. The nanowire heterostructures contained InN disks and In0.4Ga0.6N barrier layers in the active region. The resulting nanowire array comprised two differently shaped nanowires: shorter pencil-like nanowires and longer bead-like nanowires. The two different nanowire shapes evolve due to a variation in the In incorporation rate, which was faster for the bead-like nanowires. Both types of nanowires exhibited evidence of significant migration of both Ga and In during growth. Ga tended to diffuse away and down along the sidewalls, resulting in a Ga-rich shell for all nanowires. Despite the complex structure and great variability in the In composition, the optical properties of the nanowire arrays were very good, with strong luminescence peaking at ˜ 1.63 μm.

Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures.

PubMed

Chen, Zefeng; Wang, Zhao; Li, Xinming; Lin, Yuxuan; Luo, Ningqi; Long, Mingzhu; Zhao, Ni; Xu, Jian-Bin

2017-05-23

The piezoelectric effect is widely applied in pressure sensors for the detection of dynamic signals. However, these piezoelectric-induced pressure sensors have challenges in measuring static signals that are based on the transient flow of electrons in an external load as driven by the piezopotential arisen from dynamic stress. Here, we present a pressure sensor with nanowires/graphene heterostructures for static measurements based on the synergistic mechanisms between strain-induced polarization charges in piezoelectric nanowires and the caused change of carrier scattering in graphene. Compared to the conventional piezoelectric nanowire or graphene pressure sensors, this sensor is capable of measuring static pressures with a sensitivity of up to 9.4 × 10 -3 kPa -1 and a fast response time down to 5-7 ms. This demonstration of pressure sensors shows great potential in the applications of electronic skin and wearable devices.

Tunable properties of spin waves in magnetoelastic {NiFe}/{{Gd}}_{2}{({{MoO}}_{4})}_{3} heterostructure

NASA Astrophysics Data System (ADS)

Graczyk, Piotr; Trzaskowska, Aleksandra; Załȩski, Karol; Mróz, Bogusław

2016-07-01

Full ferroelastic and simultaneously ferroelectric materials are interesting candidates for applications in devices based on multiferroic heterostructures. They should allow for non-volatile and low-power writing of data bits in magnetoelectric random access memories. Moreover, ferroelasticity, in contrast to piezoelectric material, make magnetic information in ferromagnetic film resistant to external fields. As an example for such a system, we have studied the magnetoelastic interaction between a thin ferromagnetic layer of {{Ni}}85{{Fe}}15 with a full ferroelastic-ferroelectric gadolinium molybdate {{Gd}}2{({{MoO}}4)}3 crystal. We have investigated the influence of {{Gd}}2{({{MoO}}4)}3 spontaneous strain onto magnetic properties of thin ferromagnetic film. Particularly, we have shown by Brillouin spectroscopy, that it is possible to modulate surface spin wave frequency of {{Ni}}85{{Fe}}15 by spontaneous strain of gadolinium molybdate substrate.

Si/Ge double-layered nanotube array as a lithium ion battery anode.

PubMed

Song, Taeseup; Cheng, Huanyu; Choi, Heechae; Lee, Jin-Hyon; Han, Hyungkyu; Lee, Dong Hyun; Yoo, Dong Su; Kwon, Moon-Seok; Choi, Jae-Man; Doo, Seok Gwang; Chang, Hyuk; Xiao, Jianliang; Huang, Yonggang; Park, Won Il; Chung, Yong-Chae; Kim, Hansu; Rogers, John A; Paik, Ungyu

2012-01-24

Problems related to tremendous volume changes associated with cycling and the low electron conductivity and ion diffusivity of Si represent major obstacles to its use in high-capacity anodes for lithium ion batteries. We have developed a group IVA based nanotube heterostructure array, consisting of a high-capacity Si inner layer and a highly conductive Ge outer layer, to yield both favorable mechanics and kinetics in battery applications. This type of Si/Ge double-layered nanotube array electrode exhibits improved electrochemical performances over the analogous homogeneous Si system, including stable capacity retention (85% after 50 cycles) and doubled capacity at a 3C rate. These results stem from reduced maximum hoop strain in the nanotubes, supported by theoretical mechanics modeling, and lowered activation energy barrier for Li diffusion. This electrode technology creates opportunities in the development of group IVA nanotube heterostructures for next generation lithium ion batteries. © 2011 American Chemical Society

van der Waals Layered Materials: Opportunities and Challenges.

PubMed

Duong, Dinh Loc; Yun, Seok Joon; Lee, Young Hee

2017-12-26

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

PubMed

Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

2009-01-05

We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics

NASA Astrophysics Data System (ADS)

Wang, Aaron; Chien, TeYu

2018-03-01

Complex oxide heterostructure interfaces have shown novel physical phenomena which do not exist in bulk materials. These heterostructures can be used in the potential applications in the next generation devices and served as the playgrounds for the fundamental physics research. The direct measurements of the interfaces with excellent spatial resolution and physical property information is rather difficult to achieve with the existing tools. Recently developed cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S) for complex oxide interfaces have proven to be capable of providing local electronic density of states (LDOS) information at the interface with spatial resolution down to nanometer scale. In this perspective, we will briefly introduce the basic idea and some recent achievements in using XSTM/S to study complex oxide interfaces. We will also discuss the future of this technique and the field of the interfacial physics.

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

PubMed

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-05-16

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

Toward Highly Efficient Electrocatalyst for Li–O 2 Batteries Using Biphasic N-Doping Cobalt@Graphene Multiple-Capsule Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Guoqiang; Chong, Lina; Amine, Rachid

For the promotion of lithium oxygen batteries available for :practical applications, the development of advanced cathode catalysts with low-high activity, and stable structural properties is demanded. Such development is rooted on certain intelligent catalyst-electrode design that fundamentally facilitates electronic and ionic transport and improves oxygen diffusivity in a porous environment. Here we design a biphasic nitrogen-doped cobalt@grapbene Multiple-capsule heterostructure, combined with a flexible, stable porous electrode architecture, and apply it as promising cathodes for lithium oxygen cells. 'The biphasic nitrogen-doping feature improves the electric conductivity and catalytic activity; the multiple-nanocapsule configuration makes high/uniform electroactive zones possible; furthermore the colander-like porousmore » electrode facilitates the oxygen diffusion, catalytic reaction,and stable deposition of discharge products. As a result, the electrode exhibits much improved electrocatalytic properties associated with unique morphologies of electrochemically grown lithium peroxides.« less

Toward highly efficient electrocatalyst for Li–O 2 batteries using biphasic N-doping cobalt@graphene multiple-capsule heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Guoqiang; Chong, Lina; Amine, Rachid

To promote lithium-oxygen batteries available for practical applications, the development of advanced cathode catalysts with low-cost, high activity and stable structural properties is demanded. Such development is rooted on certain intelligent catalyst-electrode design that fundamentally facilitates electronic and ionic transport, and improves oxygen diffusivity in a porous environment. Here we design a biphasic nitrogen-doped cobalt@graphene multiple-capsule heterostructure, combined with a flexible, stable porous electrode architecture, and apply it as promising cathodes for lithium-oxygen cells. The biphasic nitrogen-doping feature improves the electric conductivity and catalytic activity; the multiple-nanocapsule configuration makes high/uniform electro-active zones possible; furthermore, the colander-like porous electrode facilitates themore » oxygen diffusion, catalytic reaction, and stable deposition of discharge products. Finally, the electrode exhibits much improved electrocatalytic properties associated with unique morphologies of electrochemically grown lithium peroxides.« less

Toward Highly Efficient Electrocatalyst for Li-O2 Batteries Using Biphasic N-Doping Cobalt@Graphene Multiple-Capsule Heterostructures.

PubMed

Tan, Guoqiang; Chong, Lina; Amine, Rachid; Lu, Jun; Liu, Cong; Yuan, Yifei; Wen, Jianguo; He, Kun; Bi, Xuanxuan; Guo, Yuanyuan; Wang, Hsien-Hau; Shahbazian-Yassar, Reza; Al Hallaj, Said; Miller, Dean J; Liu, Dijia; Amine, Khalil

2017-05-10

For the promotion of lithium-oxygen batteries available for practical applications, the development of advanced cathode catalysts with low-cost, high activity, and stable structural properties is demanded. Such development is rooted on certain intelligent catalyst-electrode design that fundamentally facilitates electronic and ionic transport and improves oxygen diffusivity in a porous environment. Here we design a biphasic nitrogen-doped cobalt@graphene multiple-capsule heterostructure, combined with a flexible, stable porous electrode architecture, and apply it as promising cathodes for lithium-oxygen cells. The biphasic nitrogen-doping feature improves the electric conductivity and catalytic activity; the multiple-nanocapsule configuration makes high/uniform electroactive zones possible; furthermore, the colander-like porous electrode facilitates the oxygen diffusion, catalytic reaction, and stable deposition of discharge products. As a result, the electrode exhibits much improved electrocatalytic properties associated with unique morphologies of electrochemically grown lithium peroxides.

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

NASA Astrophysics Data System (ADS)

Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-05-01

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 106 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paskiewicz, Deborah M.; Sichel-Tissot, Rebecca; Karapetrova, Evguenia

The field of oxide electronics has benefited from the wide spectrum of functionalities available to the ABO 3 perovskites, and researchers are now employing defect engineering in single crystalline heterostructures to tailor properties. However, bulk oxide single crystals are not conducive to many types of applications, particularly those requiring mechanical flexibility. Here, we demonstrate the realization of an all-oxide, single-crystalline nanomembrane heterostructure. With a surface-to-volume ratio of 2 × 10 7 , the nanomembranes are fully flexible and can be readily transferred to other materials for handling purposes or for new materials integration schemes. Using in situ synchrotron X-ray scattering,more » we find that the nanomembranes can bond to other host substrates near room temperature and demonstrate coupling between surface reactivity and electromechanical properties in ferroelectric nanomembrane systems. Finally, the synthesis technique described here represents a significant advancement in materials integration and provides a new platform for the development of flexible oxide electronics.« less

Growth of heterostructures on InAs for high mobility device applications

NASA Astrophysics Data System (ADS)

Contreras-Guerrero, R.; Wang, S.; Edirisooriya, M.; Priyantha, W.; Rojas-Ramirez, J. S.; Bhuwalka, K.; Doornbos, G.; Holland, M.; Oxland, R.; Vellianitis, G.; Van Dal, M.; Duriez, B.; Passlack, M.; Diaz, C. H.; Droopad, R.

2013-09-01

The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As4 with a slight increase using As2. High structural quality lattice matched AlAsxSb1-x buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAsxSb1-x buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.

Microgravity and Charge Transfer in the Neuronal Membrane: Implications for Computational Neurobiology

NASA Technical Reports Server (NTRS)

Wallace, Ron

1995-01-01

Evidence from natural and artificial membranes indicates that the neural membrane is a liquid crystal. A liquid-to-gel phase transition caused by the application of superposed electromagnetic fields to the outer membrane surface releases spin-correlated electron pairs which propagate through a charge transfer complex. The propagation generates Rydberg atoms in the lipid bilayer lattice. In the present model, charge density configurations in promoted orbitals interact as cellular automata and perform computations in Hilbert space. Due to the small binding energies of promoted orbitals, their automata are highly sensitive to microgravitational perturbations. It is proposed that spacetime is classical on the Rydberg scale, but formed of contiguous moving segments, each of which displays topological equivalence. This stochasticity is reflected in randomized Riemannian tensor values. Spacetime segments interact with charge automata as components of a computational process. At the termination of the algorithm, an orbital of high probability density is embedded in a more stabilized microscopic spacetime. This state permits the opening of an ion channel and the conversion of a quantum algorithm into a macroscopic frequency code.

Axisymmetric black holes allowing for separation of variables in the Klein-Gordon and Hamilton-Jacobi equations

NASA Astrophysics Data System (ADS)

Konoplya, R. A.; Stuchlík, Z.; Zhidenko, A.

2018-04-01

We determine the class of axisymmetric and asymptotically flat black-hole spacetimes for which the test Klein-Gordon and Hamilton-Jacobi equations allow for the separation of variables. The known Kerr, Kerr-Newman, Kerr-Sen and some other black-hole metrics in various theories of gravity are within the class of spacetimes described here. It is shown that although the black-hole metric in the Einstein-dilaton-Gauss-Bonnet theory does not allow for the separation of variables (at least in the considered coordinates), for a number of applications it can be effectively approximated by a metric within the above class. This gives us some hope that the class of spacetimes described here may be not only generic for the known solutions allowing for the separation of variables, but also a good approximation for a broader class of metrics, which does not admit such separation. Finally, the generic form of the axisymmetric metric is expanded in the radial direction in terms of the continued fractions and the connection with other black-hole parametrizations is discussed.