CMOS-Compatible SOI MESFETS for Radiation-Hardened DC-to-DC Converters

NASA Technical Reports Server (NTRS)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2013-01-01

A radiation-tolerant transistor switch has been developed that can operate between 196 and +150 C for DC-to-DC power conversion applications. A prototype buck regulator component was demonstrated to be performing well after a total ionizing dose of 300 krad(Si). The prototype buck converters showed good efficiencies at ultra-high switching speeds in the range of 1 to 10 MHz. Such high switching frequency will enable smaller, lighter buck converters to be developed as part of the next project. Switching regulators are widely used in commercial applications including portable consumer electronics.

Ultra High-Speed Radio Frequency Switch Based on Photonics.

PubMed

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

PubMed Central

Singh, P. K.; Sonkusale, S.

2017-01-01

This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306

Lightning protection of full authority digital electronic systems

NASA Astrophysics Data System (ADS)

Crofts, David

1991-08-01

Modern electronic systems are vulnerable to transient and they now provide safety critical functions such as full authority digital electronic control (FADEC) units for fly by wire aircraft. Of the traditional suppression technologies available diodes have gained the wider acceptance, however, they lack the current handling capacity to meet existing threat levels. The development of high speed fold back devices where, at a specified voltage, the off state resistance switches to a very low on state one has provided the equivalent to a semiconductor spark gap. The size of the technology enables it to be integrated into connectors of interconnection cables. To illustrate the performance the technology was developed to meet the Lightning Protection requirements for FADEC units within aeroengines. Work was also carried out to study switching behavior with the waveform 5, the 500 us, 10 kA pulse applied to cable assemblies. This test enabled all the switches in a connector to be fired simultaneously.

Lightning protection of full authority digital electronic systems

NASA Technical Reports Server (NTRS)

Crofts, David

1991-01-01

Modern electronic systems are vulnerable to transient and they now provide safety critical functions such as full authority digital electronic control (FADEC) units for fly by wire aircraft. Of the traditional suppression technologies available diodes have gained the wider acceptance, however, they lack the current handling capacity to meet existing threat levels. The development of high speed fold back devices where, at a specified voltage, the off state resistance switches to a very low on state one has provided the equivalent to a semiconductor spark gap. The size of the technology enables it to be integrated into connectors of interconnection cables. To illustrate the performance the technology was developed to meet the Lightning Protection requirements for FADEC units within aeroengines. Work was also carried out to study switching behavior with the waveform 5, the 500 us, 10 kA pulse applied to cable assemblies. This test enabled all the switches in a connector to be fired simultaneously.

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE PAGES

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

2017-01-19

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

New scheme for image edge detection using the switching mechanism of nonlinear optical material

NASA Astrophysics Data System (ADS)

Pahari, Nirmalya; Mukhopadhyay, Sourangshu

2006-03-01

The limitations of electronics in conducting parallel arithmetic, algebraic, and logic processing are well known. Very high-speed (terahertz) performance cannot be expected in conventional electronic mechanisms. To achieve such performance we can introduce optics instead of electronics for information processing, computing, and data handling. Nonlinear optical material (NOM) is a successful candidate in this regard to play a major role in the domain of optically controlled switching systems. The character of some NOMs is such as to reflect the probe beam in the presence of two read beams (or pump beams) exciting the material from opposite directions, using the principle of four-wave mixing. In image processing, edge extraction from an image is an important and essential task. Several optical methods of digital image processing are used for properly evaluating the image edges. We propose here a new method of image edge detection, extraction, and enhancement by use of AND-based switching operations with NOM. In this process we have used the optically inverted image of a supplied image. This can be obtained by the EXOR switching operation of the NOM.

High optical switching speed and flexible electrochromic display based on WO3 nanoparticles with ZnO nanorod arrays' supported electrode

NASA Astrophysics Data System (ADS)

Wang, Mingjun; Fang, Guojia; Yuan, Longyan; Huang, Huihui; Sun, Zhenhua; Liu, Nishuang; Xia, Shanhong; Zhao, Xingzhong

2009-05-01

The electrochromic (EC) property of WO3 nanoparticles grown on vertically self-aligned ZnO nanorods (ZNRs) is reported. An electrochromic character display based on WO3 nanoparticle-modified ZnO nanorod arrays on a flexible substrate has been fabricated and demonstrated. The ZNRs were first synthesized on ZnO-seed-coated In2O3:Sn (ITO) glass (1 cm2 cell) and polyethylene terephthalate (PET) (4 cm2 cell) substrates by a low temperature hydrothermal method, and then amorphous WO3 nanoparticles were grown directly on the surface of the ZNRs by the pulsed laser deposition (PLD) method. The ZNR-based EC device shows high transparence, good electrochromic stability and fast switching speed (4.2 and 4 s for coloration and bleaching, respectively, for a 1 cm2 cell). The good performance of the ZNR electrode-based EC display can be attributed to the large surface area, high crystallinity and good electron transport properties of the ZNR arrays. Its high contrast, fast switching, good memory and flexible characteristics indicate it is a promising candidate for flexible electrochromic displays or electronic paper.

A low-latency optical switch architecture using integrated μm SOI-based contention resolution and switching

NASA Astrophysics Data System (ADS)

Mourgias-Alexandris, G.; Moralis-Pegios, M.; Terzenidis, N.; Cherchi, M.; Harjanne, M.; Aalto, T.; Vyrsokinos, K.; Pleros, N.

2018-02-01

The urgent need for high-bandwidth and high-port connectivity in Data Centers has boosted the deployment of optoelectronic packet switches towards bringing high data-rate optics closer to the ASIC, realizing optical transceiver functions directly at the ASIC package for high-rate, low-energy and low-latency interconnects. Even though optics can offer a broad range of low-energy integrated switch fabrics for replacing electronic switches and seamlessly interface with the optical I/Os, the use of energy- and latency-consuming electronic SerDes continues to be a necessity, mainly dictated by the absence of integrated and reliable optical buffering solutions. SerDes undertakes the role of optimally synergizing the lower-speed electronic buffers with the incoming and outgoing optical streams, suggesting that a SerDes-released chip-scale optical switch fabric can be only realized in case all necessary functions including contention resolution and switching can be implemented on a common photonic integration platform. In this paper, we demonstrate experimentally a hybrid Broadcast-and-Select (BS) / wavelength routed optical switch that performs both the optical buffering and switching functions with μm-scale Silicon-integrated building blocks. Optical buffering is carried out in a silicon-integrated variable delay line bank with a record-high on-chip delay/footprint efficiency of 2.6ns/mm2 and up to 17.2 nsec delay capability, while switching is executed via a BS design and a silicon-integrated echelle grating, assisted by SOA-MZI wavelength conversion stages and controlled by a FPGA header processing module. The switch has been experimentally validated in a 3x3 arrangement with 10Gb/s NRZ optical data packets, demonstrating error-free switching operation with a power penalty of <5dB.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

PubMed

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Future optical communication networks beyond 160 Gbit/s based on OTDM

NASA Astrophysics Data System (ADS)

Prati, Giancarlo; Bogoni, Antonella; Poti, Luca

2005-01-01

The virtually unlimited bandwidth of optical fibers has caused a great increase in data transmission speed over the past decade and, hence, stimulated high-demand multimedia services such as distance learning, video-conferencing and peer to peer applications. For this reason data traffic is exceeding telephony traffic, and this trend is driving the convergence of telecommunications and computer communications. In this scenario Internet Protocol (IP) is becoming the dominant protocol for any traffic, shifting the attention of the network designers from a circuit switching approach to a packet switching approach. A role of paramount importance in packet switching networks is played by the router that must implement the functionalities to set up and maintain the inter-nodal communications. The main functionalities a router must implement are routing, forwarding, switching, synchronization, contention resolution, and buffering. Nowadays, opto-electronic conversion is still required at each network node to process the incoming signal before routing that to the right output port. However, when the single channel bit rate increases beyond electronic speed limit, Optical Time Division Multiplexing (OTDM) becomes a forced choice, and all-optical processing must be performed to extract the information from the incoming packet. In this paper enabling techniques for ultra-fast all-optical network will be addressed. First a 160 Gbit/s complete transmission system will be considered. As enabling technique, an overview for all-optical logics will be discussed and experimental results will be presented using a particular reconfigurable NOLM based on Self-Phase-Modulation (SPM) or Cross-Phase-Modulation (XPM). Finally, a rough experiment on label extraction, all-optical switching and packet forwarding is shown.

75 FR 37453 - Notice of Issuance of Final Determination Concerning Dimmer and Fan Speed Switch Controls

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-29

... Determination Concerning Dimmer and Fan Speed Switch Controls AGENCY: U.S. Customs and Border Protection... country of origin of certain dimmer and fan speed switch controls which may be offered to the United... determination CBP concluded that Mexico is the country of origin of the dimmer and fan speed switch controls for...

Multiple switching modes and multiple level states in memristive devices

NASA Astrophysics Data System (ADS)

Miao, Feng; Yang, J. Joshua; Borghetti, Julien; Strachan, John Paul; Zhang, M.-X.; Goldfarb, Ilan; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2011-03-01

As one of the most promising technologies for next generation non-volatile memory, metal oxide based memristive devices have demonstrated great advantages on scalability, operating speed and power consumption. Here we report the observation of multiple switching modes and multiple level states in different memristive systems. The multiple switching modes can be obtained by limiting the current during electroforming, and related transport behaviors, including ionic and electronic motions, are characterized. Such observation can be rationalized by a model of two effective switching layers adjacent to the bottom and top electrodes. Multiple level states, corresponding to different composition of the conducting channel, will also be discussed in the context of multiple-level storage for high density, non-volatile memory applications.

A battery-run pulsed motor with inherent dynamic electronic switch control

NASA Astrophysics Data System (ADS)

Tripathi, K. C.; Lal, P.; Sarma, P. R.; Sharma, A. K.; Prakash, V.

1980-02-01

A new type of battery-run brushless ferrite-magnet dc motor system is described. Its rotor part consists of a few permanent ceramic (ferrite) magnets uniformly spread on the rim of a disk (wheel) and the stator part consists of electromagnets placed in such a way that when energized, they always form a repulsive couple to rotate the disk. A sensor coil is placed to give an induced pulse signal, which acts as an inherent dynamic switching time control for the automatic electronic control system. Control of speed, brake system, and safety measures are also discussed. Experimental values for the present system are given. Some possible applications are suggested.

An Improved Power Quality Based Sheppard-Taylor Converter Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2015-12-01

This paper deals with the design and analysis of a power factor correction based Sheppard-Taylor converter fed brushless dc motor (BLDCM) drive. The speed of the BLDCM is controlled by adjusting the dc link voltage of the voltage source inverter (VSI) feeding BLDCM. Moreover, a low frequency switching of the VSI is used for electronically commutating the BLDCM for reduced switching losses. The Sheppard-Taylor converter is designed to operate in continuous conduction mode to achieve an improved power quality at the ac mains for a wide range of speed control and supply voltage variation. The BLDCM drive is designed and its performance is simulated in a MATLAB/Simulink environment to achieve the power quality indices within the limits of the international power quality standard IEC-61000-3-2.

Ultrafast Manipulation of Magnetic Order with Electrical Pulses

NASA Astrophysics Data System (ADS)

Yang, Yang

During the last 30 years spintronics has been a very rapidly expanding field leading to lots of new interesting physics and applications. As with most technology-oriented fields, spintronics strives to control devices with very low energy consumption and high speed. The combination of spin and electronics inherent to spintronics directly tackles energy efficiency, due to the non-volatility of magnetism. However, speed of operation of spintronic devices is still rather limited ( nanoseconds), due to slow magnetization precessional frequencies. Ultrafast magnetism (or opto-magnetism) is a relatively new field that has been very active in the last 20 years. The main idea is that intense femtosecond laser pulses can be used in order to manipulate the magnetization at very fast time-scales ( 100 femtoseconds). However, the use of femtosecond lasers poses great application challenges such as diffraction limited optical spot sizes which hinders device density, and bulky and expensive integration of femtosecond lasers into devices. In this thesis, our efforts to combine ultrafast magnetism and spintronics are presented. First, we show that the magnetization of ferrimagnetic GdFeCo films can be switched by picosecond electronic heat current pulses. This result shows that a non-thermal distribution of electrons directly excited by laser is not necessary for inducing ultrafast magnetic dynamics. Then, we fabricate photoconductive switch devices on a LT-GaAs substrate, to generate picosecond electrical pulses. Intense electrical pulses with 10ps (FWHM) duration and peak current up to 3A can be generated and delivered into magnetic films. Distinct magnetic dynamics in CoPt films are found between direct optical heating and electrical heating. More importantly, by delivering picosecond electrical pulses into GdFeCo films, we are able to deterministically reverse the magnetization of GdFeCo within 10ps. This is more than one order of magnitude faster than any other electrically controlled magnetic switching. Our results present a fundamentally new switching mechanism electrically, without requirement for any spin polarized current or spin transfer/orbit torques. Our discovery that ultrafast magnetization switching can be achieved with electrical pulses will launch a new frontier of spintronics science and herald a new generation of spintronic devices that operate at high speed with low energy consumption. At last, to push ultrafast spintronics to practical use, ultrafast switching of a ferromagnetic film is desired. By exploiting the exchange interaction between GdFeCo and ferromagnetic Co/Pt layer, we achieved ultrafast (sub 10ps) switching of ferromagnetic film with a single laser pulse. This result will open up the possibility to control ferromagnetic materials at ultrafast time scale, critical for practical applications.

Extreme nonlinear terahertz electro-optics in diamond for ultrafast pulse switching

NASA Astrophysics Data System (ADS)

Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

2017-03-01

Polarization switching of picosecond laser pulses is a fundamental concept in signal processing [C. Chen and G. Liu, Annu. Rev. Mater. Sci. 16, 203 (1986); V. R. Almeida et al., Nature 431, 1081 (2004); and A. A. P. Pohl et al., Photonics Sens. 3, 1 (2013)]. Conventional switching devices rely on the electro-optical Pockels effect and work at radio frequencies. The ensuing gating time of several nanoseconds is a bottleneck for faster switches which is set by the performance of state-of-the-art high-voltage electronics. Here we show that by substituting the electric field of several kV/cm provided by modern electronics by the MV/cm field of a single-cycle THz laser pulse, the electro-optical gating process can be driven orders of magnitude faster, at THz frequencies. In this context, we introduce diamond as an exceptional electro-optical material and demonstrate a pulse gating time as fast as 100 fs using sub-cycle THz-induced Kerr nonlinearity. We show that THz-induced switching in the insulator diamond is fully governed by the THz pulse shape. The presented THz-based electro-optical approach overcomes the bandwidth and switching speed limits of conventional MHz/GHz electronics and establishes the ultrafast electro-optical gating technology for the first time in the THz frequency range. We finally show that the presented THz polarization gating technique is applicable for advanced beam diagnostics. As a first example, we demonstrate tomographic reconstruction of a THz pulse in three dimensions.

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

NASA Technical Reports Server (NTRS)

Moise, T. S.; Kao, Y. -C.; Jovanovic, D.; Sotirelis, P.

1995-01-01

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Switching speeds in NCAP displays: dependence on collection angle and wavelength

NASA Astrophysics Data System (ADS)

Reamey, Robert H.; Montoya, Wayne; Wartenberg, Mark

1991-06-01

The on and off switching speeds of nematic droplet-polymer films (NCAP) are shown to depend on the collection angle (f/#) and the wavelength of the light used in the measurement. Conventional twisted nematic liquid crystal displays have switching speeds which depend little on these factors. The switching speed dependence on collection angle (f/#) and wavelength for nematic droplet-polymer films is inherent to the mechanism by which light is modulated in these films. This mechanism is the scattering of light by the nematic droplets. The on times become faster and the off times become slower as the collection angle of detection is increased. The overall change in switching speed can be large. Greater than 100X changes in off time have been observed. As the wavelength of the light used to interrogate the sample is increased (blue yields green yields red) the on times become faster and the off times become slower. This dependence of switching speed on wavelength is apparent at all collection angles. An awareness of these effects is necessary when developing nematic droplet-polymer films for display applications and when comparing switching speed data from different sources.

Solid-state switch increases switching speed

NASA Technical Reports Server (NTRS)

Mcgowan, G. F.

1966-01-01

Solid state switch for commutating capacitors in an RC commutated network increases switching speed and extends the filtering or commutating frequency spectrum well into the kilocycle region. The switch is equivalent to the standard double- pole double-throw /DPDT/ relay and is driven from digital micrologic circuits.

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Microcomputer control of an electronically commutated dc motor

NASA Astrophysics Data System (ADS)

El-Sharkawi, M. A.; Coleman, J. S.; Mehdi, I. S.; Sommer, D. L.

A microcomputer control system for an electronically commutated dc motor (ECM) has been designed, built and tested. A 3-hp, 270-volt, samarium-cobalt brushless dc motor is controlled by an Intel 8086-based microcomputer. The main functions of the microcomputer are to control the speed of the motor, to provide forward or reverse rotation, to brake, and to protect the motor and its power electronic switching circuits from overcurrents. The necessary interface circuits were designed and built, and the system components have been integrated and tested. It is shown that the proposed ECM system with the microcomputer control operate the motor reliably over a wide range of speeds. The purpose of this effort is to develop the motorcontroller for driving electromechanical actuators for flight control and other aircraft applications.

International Conference on Integrated Optical Circuit Engineering, 1st, Cambridge, MA, October 23-25, 1984, Proceedings

NASA Astrophysics Data System (ADS)

Ostrowsky, D. B.; Sriram, S.

Aspects of waveguide technology are explored, taking into account waveguide fabrication techniques in GaAs/GaAlAs, the design and fabrication of AlGaAs/GaAs phase couplers for optical integrated circuit applications, ion implanted GaAs integrated optics fabrication technology, a direct writing electron beam lithography based process for the realization of optoelectronic integrated circuits, and advances in the development of semiconductor integrated optical circuits for telecommunications. Other subjects examined are related to optical signal processing, optical switching, and questions of optical bistability and logic. Attention is given to acousto-optic techniques in integrated optics, acousto-optic Bragg diffraction in proton exchanged waveguides, optical threshold logic architectures for hybrid binary/residue processors, integrated optical modulation and switching, all-optic logic devices for waveguide optics, optoelectronic switching, high-speed photodetector switching, and a mechanical optical switch.

Speed control of an induction motor by 6-switched 3-level inverter

NASA Astrophysics Data System (ADS)

Saygin, Ali; Kerem, Alper

2017-12-01

This paper presents speed control analysis of an induction motor by a 6-switched 3-level inverter. In the analysis of topology, the study used the field oriented control technique which is widely used in the literature, easy and stable for operating systems. The field weaking technique was used for speeds exceeding nominal speed to reduce magnetic saturation and thermal losses. At the end of the process, it was observed to increase motor torque and inverter efficiency. Instead of using 12 switches in conventional 3-level inverters, 6 switches are used in this topology. Reduced number of switches is the greatest contribution of this study.

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

PubMed Central

Song, Ji-Min; Lee, Jang-Sik

2016-01-01

Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

Integrated tests of a high speed VXS switch card and 250 MSPS flash ADCs

DOE Office of Scientific and Technical Information (OSTI.GOV)

H. Dong, C. Cuevas, D. Curry, E. Jastrzembski, F. Barbosa, J. Wilson, M. Taylor, B. Raydo

2008-01-01

High trigger rate nuclear physics experiments proposed for the 12 GeV upgrade at the Thomas Jefferson National Accelerator Facility create a need for new high speed digital systems for energy summing. Signals from electronic detectors will be captured with the Jefferson Lab FADC module, which collects and processes data from 16 charged particle sensors with 10 or 12 bit resolution at 250 MHz sample rate. Up to sixteen FADC modules transfer energy information to a central energy summing module for each readout crate. The sums from the crates are combined to form a global energy sum that is used tomore » trigger data readout for all modules. The Energy Sum module and FADC modules have been designed using the VITA-41 VME64 switched serial (VXS) standard. The VITA- 41 standard defines payload and switch slot module functions, and offers an elegant engineered solution for Multi-Gigabit serial transmission on a standard VITA-41 backplane. The Jefferson Lab Energy Sum module receives data serially at a rate of up to 6 Giga-bits per second from the FADC modules. Both FADC and Energy Sum modules have been designed and assembled and this paper describes the integrated tests using both high speed modules in unison« less

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk; Neeves, Matthew

2014-11-10

High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

Observation of Third-order Nonlinearities in Graphene Oxide Film at Telecommunication Wavelengths

DOE PAGES

Xu, Xiaochuan; Zheng, Xiaorui; He, Feng; ...

2017-08-29

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here in this paper we report the observation of ultrahigh third-order nonlinearity about 0.45 cm 2/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantlymore » advance the performance of alloptical switches.« less

Observation of Third-order Nonlinearities in Graphene Oxide Film at Telecommunication Wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaochuan; Zheng, Xiaorui; He, Feng

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here in this paper we report the observation of ultrahigh third-order nonlinearity about 0.45 cm 2/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantlymore » advance the performance of alloptical switches.« less

An Improved Power Quality BIBRED Converter-Based VSI-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2014-01-01

This paper presents an IHQRR (integrated high-quality rectifier regulator) BIBRED (boost integrated buck rectifier energy storage DC-DC) converter-based VSI (voltage source inverter)-fed BLDC (brushless DC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the VSI using a single voltage sensor. This allows VSI to operate in fundamental frequency switching mode for electronic commutation of BLDC motor which reduces the switching losses due to high-frequency switching used in conventional approach of PWM (pulse width modulation)-based VSI-fed BLDC motor drive. A BIBRED converter is operated in a dual-DCM (discontinuous conduction mode) thus using a voltage follower approach for PFC (power factor correction) and DC link voltage control. The performance of the proposed drive is evaluated for improved power quality over a wide range of speed control and supply voltage variation for demonstrating the behavior of proposed drive. The power quality indices thus obtained are within the recommended limits by international PQ (power quality) standards such as IEC 61000-3-2.

Pulsed laser triggered high speed microfluidic switch

NASA Astrophysics Data System (ADS)

Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

2008-10-01

We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

Adjustable speed drive study, part 1

NASA Astrophysics Data System (ADS)

Wallace, A.

1989-08-01

Advances in speed control for motors in recent years, notably those in power electronics, have widened the range of application for several adjustable speed drive (ASD) types to include the smaller horsepower sizes. The dc motor drive, formerly in almost universal use for speed control, is being challenged by the high efficiency induction motor/pulse width modulation (PWM) drive; and for special small horsepower size applications, by the permanent magnet motor/PWM inverter drive or by the switched reluctance motor drive. The main characteristics of the several ASD types suitable for small horsepower size applications are discussed, as well as their unwanted side effects: poor power factor, harmonic distortion of the supply, acoustic noise, and electromagnetic interference. A procedure is recommended for determining which, if any, ASD to use.

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating

PubMed Central

Said, Asmaa; Salah, Abeer; Abdel Fattah, Gamal

2017-01-01

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin’s rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications. PMID:28772884

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating.

PubMed

Said, Asmaa; Salah, Abeer; Fattah, Gamal Abdel

2017-05-12

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin's rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications.

The role of the tunneling matrix element and nuclear reorganization in the design of quantum-dot cellular automata molecules

NASA Astrophysics Data System (ADS)

Henry, Jackson; Blair, Enrique P.

2018-02-01

Mixed-valence molecules provide an implementation for a high-speed, energy-efficient paradigm for classical computing known as quantum-dot cellular automata (QCA). The primitive device in QCA is a cell, a structure with multiple quantum dots and a few mobile charges. A single mixed-valence molecule can function as a cell, with redox centers providing quantum dots. The charge configuration of a molecule encodes binary information, and device switching occurs via intramolecular electron transfer between dots. Arrays of molecular cells adsorbed onto a substrate form QCA logic. Individual cells in the array are coupled locally via the electrostatic electric field. This device networking enables general-purpose computing. Here, a quantum model of a two-dot molecule is built in which the two-state electronic system is coupled to the dominant nuclear vibrational mode via a reorganization energy. This model is used to explore the effects of the electronic inter-dot tunneling (coupling) matrix element and the reorganization energy on device switching. A semi-classical reduction of the model also is made to investigate the competition between field-driven device switching and the electron-vibrational self-trapping. A strong electron-vibrational coupling (high reorganization energy) gives rise to self-trapping, which inhibits the molecule's ability to switch. Nonetheless, there remains an expansive area in the tunneling-reorganization phase space where molecules can support adequate tunneling. Thus, the relationship between the tunneling matrix element and the reorganization energy affords significant leeway in the design of molecules viable for QCA applications.

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

The NASA satellite communication 20 x 20 matrix switches

NASA Technical Reports Server (NTRS)

Saunders, A. L.

1983-01-01

The characteristics of two matrix switches designed for high capacity satellite communications systems are described. The switches provide routing between 20 input and 20 output ports at an IF frequency during TDMA operations. Switching speeds of 10 nsec are projected for dual gate GaAs FETs. The two designs differed in the coupling configurations, bandwidth (2.69-1.2 GHz), off-state isolation (-54 to -40 dB), switching speeds (16-37 nsec), and gain ripple (5.3-2.2 dB). Both designs achieved a 2 nsec reconfiguration rate. Further development is required to reduce the ripple effects and attain the potential 2 nsec switching speed offered by the GaAs FETs.

Electrically and Optically Readable Light Emitting Memories

PubMed Central

Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

2014-01-01

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

Between-person and within-person associations among processing speed, attention switching, and working memory in younger and older adults.

PubMed

Stawski, Robert S; Sliwinski, Martin J; Hofer, Scott M

2013-01-01

BACKGROUND/STUDY CONTEXT: Theories of cognitive aging predict associations among processes that transpire within individuals, but are often tested by examining between-person relationships. The authors provide an empirical demonstration of how associations among measures of processing speed, attention switching, and working memory are different when considered between persons versus within persons over time. A sample of 108 older adults (M (age) = 80.8, range = 66-95) and 68 younger adults (M (age) = 20.2, range = 18-24) completed measures of processing speed, attention switching, and working memory on six occasions over a 14-day period. Multilevel modeling was used to examine processing speed and attention switching performance as predictors of working memory performance simultaneously across days (within-person) and across individuals (between-person). The findings indicates that simple comparison and response speed predicted working memory better than attention switching between persons, whereas attention switching predicted working memory better than simple comparison and response speed within persons over time. Furthermore, the authors did not observe strong evidence of age differences in these associations either within or between persons. The findings of the current study suggest that processing speed is important for understanding between-person and age-related differences in working memory, whereas attention switching is more important for understanding within-person variation in working memory. The authors conclude that theories of cognitive aging should be evaluated by analysis of within-person processes, not exclusively age-related individual differences.

Between-Person and Within-Person Associations among Processing Speed, Attention Switching and Working Memory in Younger and Older Adults

PubMed Central

Stawski, Robert S.; Sliwinski, Martin J.; Hofer, Scott M.

2013-01-01

Background/Study Context Theories of cognitive aging predict associations among processes that transpire within individuals, but are often tested by examining between-person relationships. The authors provide an empirical demonstration of how associations among measures of processing speed, attention switching, and working memory are different when considered between persons versus within persons over time. Methods A sample of 108 older adults (Mage: 80.8, range: 66–95) and 68 younger adults (Mage: 20.2, range:18–24) completed measures of processing speed, attention switching, and working memory on six occasions over a 14-day period. Multilevel modeling was used to examine processing speed and attention switching performance as predictors of working memory performance simultaneously across days (within-person) and across individuals (between-person). Results The findings indicates that simple comparison and response speed predicted working memory better than attention switching between persons, whereas attention switching predicted working memory better than simple comparison and response speed within persons over time. Furthermore, the authors did not observe strong evidence of age differences in these associations either within or between persons. Conclusion The findings of the current study suggest that processing speed is important for understanding between-person and age-related differences in working memory, whereas attention switching is more important for understanding within-person variation in working memory. The authors conclude that theories of cognitive aging should be evaluated by analysis of within-person processes, not exclusively age-related individual differences. PMID:23421639

Coulomb Blockade Plasmonic Switch.

PubMed

Xiang, Dao; Wu, Jian; Gordon, Reuven

2017-04-12

Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

Adjustable speed drive study, June 1985 to September 1988. Part 2: Appendices

NASA Astrophysics Data System (ADS)

Wallace, Alan

1989-08-01

Advances in speed control for motors in recent years, notably those in power electronics, have widened the range of application for several adjustable speed drive (ASD) types to include the smaller horsepower sizes. The dc motor drive, formerly in almost universal use for speed control, is being challenged by the high efficiency induction motor/pulse width modulation (PWM) drive; and for special small horsepower size applications, by the permanent magnet motor/PWM inverter drive or by the switched reluctance motor drive. The main characteristics of the several ASD types suitable for small horsepower size applications are discussed, as well as their unwanted side effects: poor power factor, harmonic distortion of the supply, acoustic noise, and electromagnetic interference. A procedure is recommended for determining which, if any, ASD to use.

M113 Electric Land Drive Demonstration Project. Volume 1: Vehicle Systems Design and Integration

DTIC Science & Technology

1992-08-01

pickup for L-final drive output speed MP-5 Magnetic pickup for engine speed Pressure Switches PS-I Pressure switch for gearbox pressure (5 lb/in2 ) PS...2 Pressure switch for ac generator pressure (5 lb/in 2 ) PS-3 Pressure switch for dc generator pressure (5 lb/in2 ) PS-4 Pressure switch for ac...generator-i scavenge pressure (5 lb/in 2 ) PS-5 Pressure switch for ac generator-2 scavenge pressure (5 lb/in2 ) PS-6 Pressure switch for engine

Constant power speed range extension of surface mounted PM motors

DOEpatents

Lawler, Jack Steward; Bailey, John Milton

2001-01-01

A circuit and method for controlling a rotating machine (11) in the constant horsepower range above base speed uses an inverter (15) having SCR's (T1-T6) connected in series with the primary commutation switches (Q1-Q6) to control turn off of the primary commutation switches and to protect the primary commutation switches from faults. The primary commutation switches (Q1-Q6) are controlled by a controller (14), to fire in advance or after a time when the back emf equals the applied voltage, and then to turn off after a precise dwell time, such that suitable power is developed at speeds up to at least six times base speed.

Nano- and micro-electromechanical switch dynamics

NASA Astrophysics Data System (ADS)

Pulskamp, Jeffrey S.; Proie, Robert M.; Polcawich, Ronald G.

2013-01-01

This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deline, Chris; Dann, Geoff

Recent increases in photovoltaic (PV) systems on Department of the Navy (DON) land and potential siting near airfields prompted Commander, Naval Installations Command to fund the Naval Facilities Engineering Command to evaluate the impact of electromagnetic interference (EMI) from PV systems on airfield electronic equipment. Naval Facilities Engineering and Expeditionary Warfare Center tasked Department of Energy National Renewable Energy laboratory (NREL) to conduct the assessment. PV systems often include high-speed switching semiconductor circuits to convert the voltage produced by the PV arrays to the voltage needed by the end user. Switching circuits inherently produce electromagnetic radiation at harmonics of themore » switching frequency. In this report, existing literature is summarized and tests to measure emissions and mitigation methods are discussed. The literature shows that the emissions from typical PV systems are low strength and unlikely to cause interference to most airfield electronic systems. With diligent procurement and siting of PV systems, including specifications for FCC Part 15 Class A compliant equipment and a 250-foot setback from communication equipment, NREL anticipates little to no EMI impact on nearby communications or telemetry equipment.« less

Development of a microwave 20 x 20 switch matrix for 30/20 GHz SS-TDMA application

NASA Technical Reports Server (NTRS)

Cory, B. J.; Berkowitz, M.; Wallis, R.; Schiavone, A.; Shieh, D.; Campbell, J.

1982-01-01

The design and fabrication of a 3-8 GHz, 20 x 20 Satellite Switched-Time Division Multiple Access IF switch matrix applicable to a 30/20 GHz communications satellite are described. An assessment of switch architecture in 1980 concluded that the GaAs FET-based coupled crossbar switch matrix, incorporating high speed CMOS LSI logic for switch crosspoint addressing, would be the optimum technology available for communications satellite switching by 1982. This assessment was based on such factors as switching speed, bandwidth, off-state isolation, and reliability, over a 10-year mission life. A proof-of-concept model's construction and testing are presented.

Conceptual design of a high-speed electromagnetic switch for a modified flux-coupling-type SFCL and its application in renewable energy system.

PubMed

Chen, Lei; Chen, Hongkun; Yang, Jun; Shu, Zhengyu; He, Huiwen; Shu, Xin

2016-01-01

The modified flux-coupling-type superconducting fault current (SFCL) is a high-efficient electrical auxiliary device, whose basic function is to suppress the short-circuit current by controlling the magnetic path through a high-speed switch. In this paper, the high-speed switch is based on electromagnetic repulsion mechanism, and its conceptual design is carried out to promote the application of the modified SFCL. Regarding that the switch which is consisting of a mobile copper disc, two fixed opening and closing coils, the computational method for the electromagnetic force is discussed, and also the dynamic mathematical model including circuit equation, magnetic field equation as well as mechanical motion equation is theoretically deduced. According to the mathematical modeling and calculation of characteristic parameters, a feasible design scheme is presented, and the high-speed switch's response time can be less than 0.5 ms. For that the modified SFCL is equipped with this high-speed switch, the SFCL's application in a 10 kV micro-grid system with multiple renewable energy sources are assessed in the MATLAB software. The simulations are well able to affirm the SFCL's performance behaviors.

The other fiber, the other fabric, the other way

NASA Astrophysics Data System (ADS)

Stephens, Gary R.

1993-02-01

Coaxial cable and distributed switches provide a way to configure high-speed Fiber Channel fabrics. This type of fabric provides a cost-effective alternative to a fabric of optical fibers and centralized cross-point switches. The fabric topology is a simple tree. Products using parallel busses require a significant change to migrate to a serial bus. Coaxial cables and distributed switches require a smaller technology shift for these device manufacturers. Each distributed switch permits both medium type and speed changes. The fabric can grow and bridge to optical fibers as the needs expand. A distributed fabric permits earlier entry into high-speed serial operations. For very low-cost fabrics, a distributed switch may permit a link configured as a loop. The loop eliminates half of the ports when compared to a switched point-to-point fabric. A fabric of distributed switches can interface to a cross-point switch fabric. The expected sequence of migration is: closed loops, small closed fabrics, and, finally, bridges, to connect optical cross-point switch fabrics. This paper presents the concept of distributed fabrics, including address assignment, frame routing, and general operation.

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng

Due to the favorable operating power, endurance, speed, and density., transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physiocochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resettingmore » the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.« less

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Design Sketches For Optical Crossbar Switches Intended For Large-Scale Parallel Processing Applications

NASA Astrophysics Data System (ADS)

Hartmann, Alfred; Redfield, Steve

1989-04-01

This paper discusses design of large-scale (1000x 1000) optical crossbar switching networks for use in parallel processing supercom-puters. Alternative design sketches for an optical crossbar switching network are presented using free-space optical transmission with either a beam spreading/masking model or a beam steering model for internodal communications. The performances of alternative multiple access channel communications protocol-unslotted and slotted ALOHA and carrier sense multiple access (CSMA)-are compared with the performance of the classic arbitrated bus crossbar of conventional electronic parallel computing. These comparisons indicate an almost inverse relationship between ease of implementation and speed of operation. Practical issues of optical system design are addressed, and an optically addressed, composite spatial light modulator design is presented for fabrication to arbitrarily large scale. The wide range of switch architecture, communications protocol, optical systems design, device fabrication, and system performance problems presented by these design sketches poses a serious challenge to practical exploitation of highly parallel optical interconnects in advanced computer designs.

? stability of wind turbine switching control

NASA Astrophysics Data System (ADS)

Palejiya, Dushyant; Shaltout, Mohamed; Yan, Zeyu; Chen, Dongmei

2015-01-01

In order to maximise the wind energy capture, wind turbines are operated at variable speeds. Depending on the wind speed, a turbine switches between two operating modes: a low wind speed mode and a high wind speed mode. During the low wind speed mode, the control objective is to maximise wind energy capture by controlling both the blade pitch angle and the electrical generator torque. During the high wind speed mode, the control goal is to maintain the rated power generation by only adjusting the blade pitch angle. This paper establishes the stability criteria for the switching operation of wind turbines using ? gain under the nonlinear control framework. Also, the performance of the wind turbine system is analysed by using the step response, a well-known measure for second-order linear systems.

Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime

DTIC Science & Technology

2014-12-10

that utilize electron spin properties for achieving higher- level functionality (e.g., transistor action) at very high switching speeds and...influence of the carrier-ion interaction on the properties of a semi-magnetic semi- conductor with a moderate energy gap it is important to keep in mind...the relative numbers: Some of the double barrier experiments, particularly those with II-VI materials are constructed with materials in which the

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

NASA Astrophysics Data System (ADS)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

NASA Technical Reports Server (NTRS)

Cory, B. J.

1982-01-01

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Fast Electromechanical Switches Based on Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Wong, Eric; Epp, Larry

2008-01-01

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Prosthetic design directives: Low-cost hands within reach.

PubMed

Jones, G K; Rosendo, A; Stopforth, R

2017-07-01

Although three million people around the world suffer from the lack of one or both upper limbs 80% of this number is located within developing countries. While prosthetic prices soar with technology 3D printing and low cost electronics present a sensible solution for those that cannot afford expensive prosthetics. The electronic and control design of a low-cost prosthetic hand, the Touch Hand II, is discussed. This paper shows that sensorless techniques can be used to reduce design complexities, costs, and provide easier access to the electronics. A closing and opening finite state machine (COFSM) was developed to handle the actuated digit joint control state and a supervisory switching control scheme, used for speed and grip strength control. Three torque and speed settings were created to be preset for specific grasps. The hand was able to replicate ten frequently used grasps and grip some common objects. Future work is necessary to enable a user to control it with myoelectric signals (MESs) and to solve operational problems related to electromagnetic interference (EMI).

Constant Switching Frequency DTC for Matrix Converter Fed Speed Sensorless Induction Motor Drive

NASA Astrophysics Data System (ADS)

Mir, Tabish Nazir; Singh, Bhim; Bhat, Abdul Hamid

2018-05-01

The paper presents a constant switching frequency scheme for speed sensorless Direct Torque Control (DTC) of Matrix Converter fed Induction Motor Drive. The use of matrix converter facilitates improved power quality on input as well as motor side, along with Input Power Factor control, besides eliminating the need for heavy passive elements. Moreover, DTC through Space Vector Modulation helps in achieving a fast control over the torque and flux of the motor, with added benefit of constant switching frequency. A constant switching frequency aids in maintaining desired power quality of AC mains current even at low motor speeds, and simplifies input filter design of the matrix converter, as compared to conventional hysteresis based DTC. Further, stator voltage estimation from sensed input voltage, and subsequent stator (and rotor) flux estimation is done. For speed sensorless operation, a Model Reference Adaptive System is used, which emulates the speed dependent rotor flux equations of the induction motor. The error between conventionally estimated rotor flux (reference model) and the rotor flux estimated through the adaptive observer is processed through PI controller to generate the rotor speed estimate.

Dramatic switching behavior in suspended MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Chen, Huawei; Li, Jingyu; Chen, Xiaozhang; Zhang, David; Zhou, Peng

2018-02-01

When integrating MoS2 flakes into scaling-down transistors, the short-channel effect, which is severe in silicon technology below 5-nanometer, can be avoided effectively. MoS2 transistors not only exhibit a high on/off ratio but also demonstrate a rapid switching speed. According to the theoretical calculation, the thermionic limit subthreshold slope (SS) of the ideal device could reach 60 mV/dec. However, due to the confinement of defects from substrates or contamination during the process, the SS deteriorates to more than 300 mV/dec, causing serious power consumption. In this work, we optimize the SS through structure design of MoS2 transistors. The suspended transistors exhibit a high on/off ratio of 107 and a minimum SS of 63 mV/dec with an ultralow standby power at room temperature. This study demonstrates the promising potential of structure design for electronic devices with ultralow-power switching behaviors.

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, S.; Citrin, D.; Saini, Subhash (Technical Monitor)

1998-01-01

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Identifying Read/Write Speeds for Field-Induced Interfacial Resistive Switching.

NASA Astrophysics Data System (ADS)

Tsui, Stephen; Das, Nilanjan; Wang, Yaqi; Xue, Yuyi; Chu, C. W.

2007-03-01

Efforts continue to explore new phenomena that may allow for next generation nonvolatile memory technology. Much attention has been drawn to the field-induced resistive switch occurring at the interface between a metal electrode and perovskite oxide. The switch between high (off) and low (on) resistance states is controlled by the polarity of applied voltage pulsing. Characterization of Ag-Pr0.7Ca0.3MnO3 interfaces via impedance spectroscopy shows that the resistances above 10^6 Hz are the same at the on and off states, which limits the reading speed to far slower than the applied switching pulses, or device write speed at the order of 10^7 Hz. We deduce that the switching interface is percolative in nature and that small local rearrangement of defect structures may play a major role.

Applied Physics Research for Innovation in Pulsed Power

DTIC Science & Technology

1994-09-30

yet li.... hilh I"*~ OWLC Figeue of (r-esoh gad) worik So e 0o0 baeer i*s es..esem or": Lane. bndgs, low N bu ilk ,, ly e w a, ver h voka" Oiemoed...4)~~ ~ 2WV"tW ~ electron drift mobility C) 2 V 3 FurLow forward voltage drop and 4) CO V OA. PEfT fast switching speed In majority carriler devices t

Data and clock transmission interface for the WCDA in LHAASO

NASA Astrophysics Data System (ADS)

Chu, S. P.; Zhao, L.; Jiang, Z. Y.; Ma, C.; Gao, X. S.; Yang, Y. F.; Liu, S. B.; An, Q.

2016-12-01

The Water Cherenkov Detector Array (WCDA) is one of the major components of the Large High Altitude Air Shower Observatory (LHAASO). In the WCDA, 3600 Photomultiplier Tubes (PMTs) and the Front End Electronics (FEEs) are scattered over a 90000 m2 area, while high precision time measurements (0.5 ns RMS) are required in the readout electronics. To meet this requirement, the clock has to be distributed to the FEEs with high precision. Due to the ``triggerless'' architecture, high speed data transfer is required based on the TCP/IP protocol. To simplify the readout electronics architecture and be consistent with the whole LHAASO readout electronics, the White Rabbit (WR) switches are used to transfer clock, data, and commands via a single fiber of about 400 meters. In this paper, a prototype of data and clock transmission interface for LHAASO WCDA is developed. The performance tests are conducted and the results indicate that the clock synchronization precision of the data and clock transmission is better than 50 ps. The data transmission throughput can reach 400 Mbps for one FEE board and 180 Mbps for 4 FEE boards sharing one up link port in WR switch, which is better than the requirement of the LHAASO WCDA.

High-speed and low-energy nitride memristors

DOE PAGES

Choi, Byung Joon; Torrezan, Antonio C.; Strachan, John Paul; ...

2016-05-24

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Dynamic Average-Value Modeling of Doubly-Fed Induction Generator Wind Energy Conversion Systems

NASA Astrophysics Data System (ADS)

Shahab, Azin

In a Doubly-fed Induction Generator (DFIG) wind energy conversion system, the rotor of a wound rotor induction generator is connected to the grid via a partial scale ac/ac power electronic converter which controls the rotor frequency and speed. In this research, detailed models of the DFIG wind energy conversion system with Sinusoidal Pulse-Width Modulation (SPWM) scheme and Optimal Pulse-Width Modulation (OPWM) scheme for the power electronic converter are developed in detail in PSCAD/EMTDC. As the computer simulation using the detailed models tends to be computationally extensive, time consuming and even sometimes not practical in terms of speed, two modified approaches (switching-function modeling and average-value modeling) are proposed to reduce the simulation execution time. The results demonstrate that the two proposed approaches reduce the simulation execution time while the simulation results remain close to those obtained using the detailed model simulation.

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2014 CFR

2014-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2014-10-01 2014-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2011 CFR

2011-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2011-10-01 2011-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2013 CFR

2013-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2013-10-01 2013-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2010 CFR

2010-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2010-10-01 2010-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2012 CFR

2012-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2012-10-01 2012-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

NREL`s variable speed test bed: Preliminary results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlin, P.W.; Fingersh, L.J.; Fuchs, E.F.

1996-10-01

Under an NREL subcontract, the Electrical and Computer Engineering Department of the University of Colorado (CU) designed a 20-kilowatt, 12-pole, permanent-magnet, electric generator and associated custom power electronics modules. This system can supply power over a generator speed range from 60 to 120 RPM. The generator was fabricated and assembled by the Denver electric-motor manufacturer, Unique Mobility, and the power electronics modules were designed and fabricated at the University. The generator was installed on a 56-foot tower in the modified nacelle of a Grumman Windstream 33 wind turbine in early October 1995. For checkout it was immediately loaded directly intomore » a three-phase resistive load in which it produced 3.5 kilowatts of power. Abstract only included. The ten-meter Grumman host wind machine is equipped with untwisted, untapered, NREL series S809 blades. The machine was instrumented to record both mechanical hub power and electrical power delivered to the utility. Initial tests are focusing on validating the calculated power surface. This mathematical surface shows the wind machine power as a function of both wind speed and turbine rotor speed. Upon the completion of this task, maximum effort will be directed toward filling a test matrix in which variable-speed operation will be contrasted with constant-speed mode by switching the variable speed control algorithm with the baseline constant speed control algorithm at 10 minutes time intervals. Other quantities in the test matrix will be analyzed to detect variable speed-effects on structural loads and power quality.« less

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2012 CFR

2012-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2012-10-01 2012-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2014 CFR

2014-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2014-10-01 2014-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2011 CFR

2011-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2011-10-01 2011-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2010 CFR

2010-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2010-10-01 2010-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2013 CFR

2013-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2013-10-01 2013-10-01 false Digital electronic switching. 32.2212 Section...

Ultralow Power Consumption Flexible Biomemristors.

PubMed

Kim, Min-Kyu; Lee, Jang-Sik

2018-03-28

Low power consumption is the important requirement in memory devices for saving energy. In particular, improved energy efficiency is essential in implantable electronic devices for operation under a limited power supply. Here, we demonstrate the use of κ-carrageenan (κ-car) as the resistive switching layer to achieve memory that has low power consumption. A carboxymethyl (CM) group is introduced to the κ-car to increase its ionic conductivity. Ag was doped in CM:κ-car to improve the resistive switching properties of the devices. Memory devices based on Ag-doped CM:κ-car showed electroforming-free resistive switching. This device exhibited low reset voltage (∼0.05 V), fast switching speed (50 ns), and high on/off ratio (>10 3 ) under low compliance current (10 -5 A). Its power consumption (∼0.35 μW) is much lower than those of the previously reported biomemristors. The resistive switching may be a result of an electrochemical redox process and Ag filament formation in the CM:κ-car under an electric field. This biopolymer memory can also be fabricated on flexible substrate. This study verifies the feasibility of using biopolymers for applications to future implantable and biocompatible nanoelectronics.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

NASA Astrophysics Data System (ADS)

Schlaepfer, F.; Lucchini, M.; Sato, S. A.; Volkov, M.; Kasmi, L.; Hartmann, N.; Rubio, A.; Gallmann, L.; Keller, U.

2018-06-01

Resolving the fundamental carrier dynamics induced in solids by strong electric fields is essential for future applications, ranging from nanoscale transistors1,2 to high-speed electro-optical switches3. How fast and at what rate can electrons be injected into the conduction band of a solid? Here, we investigate the sub-femtosecond response of GaAs induced by resonant intense near-infrared laser pulses using attosecond transient absorption spectroscopy. In particular, we unravel the distinct role of intra- versus interband transitions. Surprisingly, we found that despite the resonant driving laser, the optical response during the light-matter interaction is dominated by intraband motion. Furthermore, we observed that the coupling between the two mechanisms results in a significant enhancement of the carrier injection from the valence into the conduction band. This is especially unexpected as the intraband mechanism itself can accelerate carriers only within the same band. This physical phenomenon could be used to control ultrafast carrier excitation and boost injection rates in electronic switches in the petahertz regime.

HNET - A National Computerized Health Network

PubMed Central

Casey, Mark; Hamilton, Richard

1988-01-01

The HNET system demonstrated conceptually and technically a national text (and limited bit mapped graphics) computer network for use between innovative members of the health care industry. The HNET configuration of a leased high speed national packet switching network connecting any number of mainframe, mini, and micro computers was unique in it's relatively low capital costs and freedom from obsolescence. With multiple simultaneous conferences, databases, bulletin boards, calendars, and advanced electronic mail and surveys, it is marketable to innovative hospitals, clinics, physicians, health care associations and societies, nurses, multisite research projects libraries, etc.. Electronic publishing and education capabilities along with integrated voice and video transmission are identified as future enhancements.

Improvement of automatic control systems of high-power turbines of PAO tubroatom for nuclear power plants

NASA Astrophysics Data System (ADS)

Shvetsov, V. L.; Babaev, I. N.

2017-09-01

The main technical solutions applied by PAO Turboatom used as the compensatory measures at the increase of the period of nonstop operation of nuclear power plants' (NPP) turbines with VVER-1000 type reactors up to 18 months are (1) replacing the standard hydraulic speed controller with an electronic one, (2) introduction of overclocking protection, (3) modernization of units of stop-control valves of high pressures, (4) installation of locking dampers on the receiver tubes of turbines of the first and second modification, and (5) improving the quality of repairs by reviewing the requirements for their implementation. The introduction of complex diagnostics of a control system on the basis of automatic treatment of results of registration of working parameters of the turbine is allocated as a separate prospective direction. Using an electronic controller of speed makes it possible to simplify the procedure of its inclusion in work at the failure of an electro-hydraulic system of control and vice versa. The regimes of maintaining the turbine rotor speed, steam pressure on the outlet of turbine, and the positions of main servomotors were introduced into the functions of the electronic controller. An electronic controller of speed includes its own electro-hydraulic transducer, turbine rotor speed sensor, and sensors of the position of main servomotors. Into the functions of electro- hydraulic control system and electronic speed controller, the function of overclocking protection, which determines the formation of commands for stopping the turbine at the exceeding of both the defined level of rotation speed and the defined combination of achieved rotation speed and angular acceleration of rotor, was introduced. To simplify the correction of forces acting on the control valve cups, the design of the cups was changed, and it has the profiled inserts. The solutions proposed were implemented on K-1100-60/1500-2M turbines of Rostov NPP. From the composition of control system of already made turbines, the devices of speed switching of moving of control flaps for opening and hydraulic damper in the servomotors of regulating flaps were excluded; the fists of the control valves providing the increased valve stroke for opening and the construction of filters for regulation, electro-hydraulic converters, oil draining device, etc. was changed.

Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

NASA Astrophysics Data System (ADS)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

NASA Astrophysics Data System (ADS)

Lim, Heuijin; Hyeok Jeong, Dong; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-04-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun.

Monolithic millimeter-wave diode array beam controllers: Theory and experiment

NASA Technical Reports Server (NTRS)

Sjogren, L. B.; Liu, H.-X. L.; Wang, F.; Liu, T.; Wu, W.; Qin, X.-H.; Chung, E.; Domier, C. W.; Luhmann, N. C., Jr.; Maserjian, J.

1992-01-01

In the current work, multi-function beam control arrays have been fabricated and have successfully demonstrated amplitude control of transmitted beams in the W and D bands (75-170 GHz). While these arrays are designed to provide beam control under DC bias operation, new designs for high-speed electronic and optical control are under development. These arrays will fill a need for high-speed watt-level beam switches in pulsed reflectometer systems under development for magnetic fusion plasma diagnostics. A second experimental accomplishment of the current work is the demonstration in the 100-170 GHz (D band) frequency range of a new technique for the measurement of the transmission phase as well as amplitude. Transmission data can serve as a means to extract ('de-embed') the grid parameters; phase information provides more complete data to assist in this process. Additional functions of the array beam controller yet to be tested include electronically controlled steering and focusing of a reflected beam. These have application in the areas of millimeter-wave electronic scanning radar and reflectometry, respectively.

Microwave Amplifiers.

DTIC Science & Technology

1988-01-25

Phys. Rev. B , to be published. 17. D. Ahi and S. L. Chuang, Phvs. Rev. B 34, 9034 (1986). 18. I. Suemune, T. Takeoka , M. Yamanichi. and Y. Lee, IEEE J...lifetime which 6,7,8limits the switching speed Recent exnerimental results by T. Takeoka et 8 al. show that a short optical pulse as narrow as 140 ps full...Phys. 22, L22(1983). 7. 1. Suemune, T. Takeoka , M. Yamanishi, and Y. Lee, IEEE J. Quantum Electron. 22, 1900(1986). 8. T. Takeoka , M. Yamanishi, Y

Investigation of noise insensitive electronic circuits for automotive applications with particular regard to MOS circuits

NASA Astrophysics Data System (ADS)

Gorille, I.

1980-11-01

The application of MOS switching circuits of high complexity in essential automobile systems, such as ignition and injection, was investigated. A bipolar circuit technology, current hogging logic (CHL), was compared to MOS technologies for its competitiveness. The functional requirements of digital automotive systems can only be met by technologies allowing large packing densities and medium speeds. The properties of n-MOS and CMOS are promising whereas the electrical power needed by p-MOS circuits is in general prohibitively large.

Conference Proceedings of The Human-Electronic Crew: Can They Work Together? Held in Ingolstadt, FRG on 19-22 September 1988

DTIC Science & Technology

1989-07-01

and it was not possible to apply any existing planning techniques to this application. As a demonstrator the Route Planning Expert shows the powerful ...digital quantities, e.g. rotor speeds, engine torques, power rail states, switch settings, etc. It interacts with the pilot to obtain further...Befavior in Nuclear Power Plant Personnel. Nuclear Regulatory Commission, Report Ni. NUREG-CR-4532, 1987. (9) Abbott, K. Il~~tDaumininKweu.wtFut Dicynosig

Control system for a wound-rotor motor

DOEpatents

Ellis, James N.

1983-01-01

A load switching circuit for switching two or more transformer taps under load carrying conditions includes first and second parallel connected bridge rectifier circuits which control the selective connection of a direct current load to taps of a transformer. The first bridge circuit is normally conducting so that the load is connected to a first tap through the first bridge circuit. To transfer the load to the second tap, a switch is operable to connect the second bridge circuit to a second tap, and when the second bridge circuit begins to conduct, the first bridge circuit ceases conduction because the potential at the second tap is higher than the potential at the first tap, and the load is thus connected to the second tap through the second bridge circuit. The load switching circuit is applicable in a motor speed controller for a wound-rotor motor for effecting tap switching as a function of motor speed while providing a stepless motor speed control characteristic.

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

NASA Technical Reports Server (NTRS)

Adams, Michael J. (Editor)

1987-01-01

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Controlling the mode of operation of organic transistors through side-chain engineering.

PubMed

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B; Bandiello, Enrico; Hanifi, David A; Sessolo, Michele; Malliaras, George G; McCulloch, Iain; Rivnay, Jonathan

2016-10-25

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

Controlling the mode of operation of organic transistors through side-chain engineering

PubMed Central

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B.; Bandiello, Enrico; Hanifi, David A.; Sessolo, Michele; Malliaras, George G.; McCulloch, Iain; Rivnay, Jonathan

2016-01-01

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors. PMID:27790983

Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

NASA Astrophysics Data System (ADS)

Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

2017-01-01

Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.

Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber

DOE PAGES

Yang, Yuanmu; Kelley, Kyle; Sachet, Edward; ...

2017-05-01

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance frommore » 1.0 to 86.3%. As a result, by combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.« less

Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuanmu; Kelley, Kyle; Sachet, Edward

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance frommore » 1.0 to 86.3%. As a result, by combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.« less

Fast and efficient STT switching in MTJ using additional transient pulse current

NASA Astrophysics Data System (ADS)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Digital switched hydraulics

NASA Astrophysics Data System (ADS)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

Mapper: high throughput maskless lithography

NASA Astrophysics Data System (ADS)

Kuiper, V.; Kampherbeek, B. J.; Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Boers, J.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.

2009-01-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. A new platform has been designed and built which contains a 300 mm wafer stage, a wafer handler and an electron beam column with 110 parallel electron beams. This manuscript describes the first patterning results with this 300 mm platform.

Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

NASA Astrophysics Data System (ADS)

Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2018-04-01

Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

High-speed optical switch fabrics with large port count.

PubMed

Yeo, Yong-Kee; Xu, Zhaowen; Wang, Dawei; Liu, Jianguo; Wang, Yixin; Cheng, Tee-Hiang

2009-06-22

We report a novel architecture that can be used to construct optical switch fabrics with very high port count and nanoseconds switching speed. It is well known that optical switch fabrics with very fast switching time and high port count are challenging to realize. Currently, one of the most promising solutions is based on a combination of wavelength-tunable lasers and the arrayed waveguide grating router (AWGR). To scale up the number of ports in such switches, a direct method is to use AWGRs with a high channel count. However, such AWGRs introduce very large crosstalk noise due to the close wavelength channel spacing. In this paper, we propose an architecture for realizing a high-port count optical switch fabric using a combination of low-port count AWGRs, optical ON-OFF gates and WDM couplers. Using this new methodology, we constructed a proof-of concept experiment to demonstrate the feasibility of a 256 x 256 optical switch fabric. To our knowledge, this port count is the highest ever reported for switch fabrics of this type.

High-speed electro-optic switch based on nonlinear polymer-clad waveguide incorporated with quasi-in-plane coplanar waveguide electrodes

NASA Astrophysics Data System (ADS)

Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming

2018-01-01

Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.

High speed chalcogenide glass electrochemical metallization cells with various active metals.

PubMed

Hughes, Mark A; Burgess, Alexander; Hinder, Steven; Gholizadeh, A Baset; Craig, Christopher; Hewak, Daniel W

2018-08-03

We fabricated electrochemical metallization cells using a GaLaSO solid electrolyte, an InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of <5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer.

Sensitivity and Switching Delay in Trigger Circuits; SENSIBILITA E RITARDO ENI CIRCUITI A SCATTO

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Lotto, I.; Stanchi, L.

The problem of regeneration in trigger circuits is studied, particularly in relation to switching delay and switching time. The factors that affect the speed, such as the threshold as a function of the input signal duration, are examined. The sensitivity of the circuit is also discussed. The characteristics of the dipole equivalent to a trigger circuit are determined, and the switching delay and switching rise time are examined using considerable simplifications (circuits with constant parameters) and graphical methods. For the particular case of a transistor circuit, the equation of the equivalent circuit is derived taking into account the nonlinearity ofmore » the parameters. This equation is processed by means of an analog computer. Using experimental data, the circuits are classified according to their sensitivity and the switching delay. A merit figure is obtained for synthetically evaluating different circuits and optimizing circuit sensitivity and speed. (auth)« less

High-speed multi-frame dynamic transmission electron microscope image acquisition system with arbitrary timing

DOEpatents

Reed, Bryan W.; DeHope, William J.; Huete, Glenn; LaGrange, Thomas B.; Shuttlesworth, Richard M.

2016-02-23

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a train of temporally-shaped laser pulses each being of a programmable pulse duration, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has a plurality of plates. A control system having a digital sequencer controls the laser and a plurality of switching components, synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to enable programmable pulse durations and programmable inter-pulse spacings.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

High-speed multiframe dynamic transmission electron microscope image acquisition system with arbitrary timing

DOEpatents

Reed, Bryan W.; DeHope, William J.; Huete, Glenn; LaGrange, Thomas B.; Shuttlesworth, Richard M.

2015-10-20

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings.

High-speed multiframe dynamic transmission electron microscope image acquisition system with arbitrary timing

DOEpatents

Reed, Bryan W.; Dehope, William J; Huete, Glenn; LaGrange, Thomas B.; Shuttlesworth, Richard M

2016-06-21

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings.

Integrated Circuit Chip Improves Network Efficiency

NASA Technical Reports Server (NTRS)

2008-01-01

Prior to 1999 and the development of SpaceWire, a standard for high-speed links for computer networks managed by the European Space Agency (ESA), there was no high-speed communications protocol for flight electronics. Onboard computers, processing units, and other electronics had to be designed for individual projects and then redesigned for subsequent projects, which increased development periods, costs, and risks. After adopting the SpaceWire protocol in 2000, NASA implemented the standard on the Swift mission, a gamma ray burst-alert telescope launched in November 2004. Scientists and developers on the James Webb Space Telescope further developed the network version of SpaceWire. In essence, SpaceWire enables more science missions at a lower cost, because it provides a standard interface between flight electronics components; new systems need not be custom built to accommodate individual missions, so electronics can be reused. New protocols are helping to standardize higher layers of computer communication. Goddard Space Flight Center improved on the ESA-developed SpaceWire by enabling standard protocols, which included defining quality of service and supporting plug-and-play capabilities. Goddard upgraded SpaceWire to make the routers more efficient and reliable, with features including redundant cables, simultaneous discrete broadcast pulses, prevention of network blockage, and improved verification. Redundant cables simplify management because the user does not need to worry about which connection is available, and simultaneous broadcast signals allow multiple users to broadcast low-latency side-band signal pulses across the network using the same resources for data communication. Additional features have been added to the SpaceWire switch to prevent network blockage so that more robust networks can be designed. Goddard s verification environment for the link-and-switch implementation continuously randomizes and tests different parts, constantly anticipating situations, which helps improve communications reliability. It has been tested in many different implementations for compatibility.

Operating principles of an electrothermal vibrometer for optical switching applications

NASA Astrophysics Data System (ADS)

Pai, Min-fan; Tien, Norman C.

1999-09-01

A compact polysilicon surface-micromachined microactuator designed for optical switching applications is described. This actuator is fabricated using the foundry MUMPs process provided by Cronos Integrated Microsystems Inc. Actuated electrothermally, the microactuator allows fast switching speeds and can be operated with a low voltage square-wave signal. The design, operation mechanisms for this long-range and high frequency thermal actuation are described. A vertical micromirror integrated with this actuator can be operated with a 10.5 V, 20 kHz 15% duty-cycle pulse signal, achieving a lateral moving speed higher than 15.6 mm/sec. The optical switch has been operated to frequencies as high as 30 kHz.

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org; Brown, E. R.

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

PubMed

Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

2012-12-17

A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

NASA Astrophysics Data System (ADS)

Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

2018-01-01

We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

Reconfigurable liquid metal circuits by Laplace pressure shaping

NASA Astrophysics Data System (ADS)

Cumby, Brad L.; Hayes, Gerard J.; Dickey, Michael D.; Justice, Ryan S.; Tabor, Christopher E.; Heikenfeld, Jason C.

2012-10-01

We report reconfigurable circuits formed by liquid metal shaping with <10 pounds per square inch (psi) Laplace and vacuum pressures. Laplace pressure drives liquid metals into microreplicated trenches, and upon release of vacuum, the liquid metal dewets into droplets that are compacted to 10-100× less area than when in the channel. Experimental validation includes measurements of actuation speeds exceeding 30 cm/s, simple erasable resistive networks, and switchable 4.5 GHz antennas. Such capability may be of value for next generation of simple electronic switches, tunable antennas, adaptive reflectors, and switchable metamaterials.

Exponential increase in the on-off ratio of conductance in organic memory devices by controlling the surface morphology of the devices

NASA Astrophysics Data System (ADS)

Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

2018-05-01

We have shown an exponential increase in the ratio of conductance in the on and off states of switching devices by controlling the surface morphology of the thin films for the device by depositing at different rotational speeds. The pinholes which are preferred topography on the surface at higher rotational speed give rise to higher on-off ratio of current from the devices fabricated at the speed. The lower rotational speed contributes to higher thickness of the film and hence no switching. For thicker films, the domain is formed due to phase segregation between the two components in the film, which also indicates that the film is far from thermal equilibrium. At higher speed, there is very little scope of segregation when the film is drying up. Hence, there are only few pinholes on the surface of the film which are shallow. So, the filamentary mechanism of switching in memory devices can be firmly established by varying the speed of thin film deposition which leads to phase segregation of the materials. Thus, the formation of filament can be regulated by controlling the thickness and the surface morphology.

Comparison of high speed DI-LIGBT structures

NASA Astrophysics Data System (ADS)

Sunkavalli, Ravishankar; Baliga, B. Jayant

1997-12-01

The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs.

Electro-optical full-adder/full-subtractor based on graphene-silicon switches

NASA Astrophysics Data System (ADS)

Zivarian, Hossein; Zarifkar, Abbas; Miri, Mehdi

2018-01-01

A compact footprint, low-power consumption, and high-speed operation electro-optical full-adder/full-subtractor based on graphene-silicon electro-optical switches is demonstrated. Each switch consists of a Mach-Zehnder interferometer in which few-layer graphene is embedded in a silicon slot waveguide to construct phase shifters. The presented structure can be used as full-adder and full-subtractor simultaneously. The analysis of various factors such as extinction ratio, power consumption, and operation speed has been presented. As will be shown, the proposed electro-optical switch has a minimum extinction ratio of 36.21 dB, maximum insertion loss about 0.18 dB, high operation speed of 180 GHz, and is able to work with a low applied voltage about 1.4 V. Also, the extinction ratio and insertion loss of the full-adder/full-subtractor are about 30 and 1.5 dB, respectively, for transfer electric modes at telecommunication wavelength of 1.55 μm.

Reconfigurable electro-optical directed-logic circuit using carrier-depletion micro-ring resonators.

PubMed

Qiu, Ciyuan; Gao, Weilu; Soref, Richard; Robinson, Jacob T; Xu, Qianfan

2014-12-15

Here we demonstrate a reconfigurable electro-optical directed-logic circuit based on a regular array of integrated optical switches. Each 1×1 optical switch consists of a micro-ring resonator with an embedded lateral p-n junction and a micro-heater. We achieve high-speed on-off switching by applying electrical logic signals to the p-n junction. We can configure the operation mode of each switch by thermal tuning the resonance wavelength. The result is an integrated optical circuit that can be reconfigured to perform any combinational logic operation. As a proof-of-principle, we fabricated a multi-spectral directed-logic circuit based on a fourfold array of switches and showed that this circuit can be reconfigured to perform arbitrary two-input logic functions with speeds up to 3  GB/s.

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2010 CFR

2010-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2013 CFR

2013-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2012 CFR

2012-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2011 CFR

2011-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2014 CFR

2014-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

Fuzzy Logic Controlled Solar Module for Driving Three- Phase Induction Motor

NASA Astrophysics Data System (ADS)

Afiqah Zainal, Nurul; Sooi Tat, Chan; Ajisman

2016-02-01

Renewable energy produced by solar module gives advantages for generated three- phase induction motor in remote area. But, solar module's ou tput is uncertain and complex. Fuzzy logic controller is one of controllers that can handle non-linear system and maximum power of solar module. Fuzzy logic controller used for Maximum Power Point Tracking (MPPT) technique to control Pulse-Width Modulation (PWM) for switching power electronics circuit. DC-DC boost converter used to boost up photovoltaic voltage to desired output and supply voltage source inverter which controlled by three-phase PWM generated by microcontroller. IGBT switched Voltage source inverter (VSI) produced alternating current (AC) voltage from direct current (DC) source to control speed of three-phase induction motor from boost converter output. Results showed that, the output power of solar module is optimized and controlled by using fuzzy logic controller. Besides that, the three-phase induction motor can be drive and control using VSI switching by the PWM signal generated by the fuzzy logic controller. This concluded that the non-linear system can be controlled and used in driving three-phase induction motor.

Reverse surface-polariton cherenkov radiation

PubMed Central

Tao, Jin; Wang, Qi Jie; Zhang, Jingjing; Luo, Yu

2016-01-01

The existence of reverse Cherenkov radiation for surface plasmons is demonstrated analytically. It is shown that in a metal-insulator-metal (MIM) waveguide, surface plasmon polaritons (SPPs) excited by an electron moving at a speed higher than the phase velocity of SPPs can generate Cherenkov radiation, which can be switched from forward to reverse direction by tuning the core thickness of the waveguide. Calculations are performed in both frequency and time domains, demonstrating that a radiation pattern with a backward-pointing radiation cone can be achieved at small waveguide core widths, with energy flow opposite to the wave vector of SPPs. Our study suggests the feasibility of generating and steering electron radiation in simple plasmonic systems, opening the gate for various applications such as velocity-selective particle detections. PMID:27477061

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials

DOE PAGES

Zalden, Peter; Shu, Michael J.; Chen, Frank; ...

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4In 3Sb 67Te 26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of thresholdmore » switching and reveals potential applications as an ultrafast electronic switch.« less

Feasibility study of an integrated optic switching center. [satellite tracking application

NASA Technical Reports Server (NTRS)

1979-01-01

The design of a high data rate switching center for a satellite tracking station is discussed. The feasibility of a switching network using an integrated switching matrix is assessed. The preferred integrated optical switching scheme was found to be an electro-optic Bragg diffraction switch. To ascertain the advantages of the integrated optics switching center, its properties are compared to those of opto-electronic and to electronics switching networks.

High-speed microwave photonic switch for millimeter-wave ultra-wideband signal generation.

PubMed

Wang, Li Xian; Li, Wei; Zheng, Jian Yu; Wang, Hui; Liu, Jian Guo; Zhu, Ning Hua

2013-02-15

We propose a scheme for generating millimeter-wave (MMW) ultra-wideband (UWB) signal that is free from low-frequency components and a residual local oscillator. The system consists of two cascaded polarization modulators and is equivalent to a high-speed microwave photonic switch, which truncates a sinusoidal MMW into short pulses. The polarity switchability of the generated MMW-UWB pulse is also demonstrated.

Variable-Speed Induction Motor Drives for Aircraft Environmental Control Compressors

NASA Technical Reports Server (NTRS)

Mildice, J. W.; Hansen, I. G.; Schreiner, K. E.; Roth, M. E.

1996-01-01

New, more-efficient designs for aircraft jet engines are not capable of supplying the large quantities of bleed air necessary to provide pressurization and air conditioning for the environmental control systems (ECS) of the next generation of large passenger aircraft. System analysis and engineering have determined that electrically-driven ECS can help to maintain the improved fuel efficiencies; and electronic controllers and induction motors are now being developed in a NASA/NPD SBIR Program to drive both types of ECS compressors. Previous variable-speed induction motor/controller system developments and publications have primarily focused on field-oriented control, with large transient reserve power, for maximum acceleration and optimum response in actuator and robotics systems. The application area addressed herein is characterized by slowly-changing inputs and outputs, small reserve power capability for acceleration, and optimization for maximum efficiency. This paper therefore focuses on the differences between this case and the optimum response case, and shows the development of this new motor/controller approach. It starts with the creation of a new set of controller requirements. In response to those requirements, new control algorithms are being developed and implemented in an embedded computer, which is integrated into the motor controller closed loop. Buffered logic outputs are used to drive the power switches in a resonant-technology, power processor/motor-controller, at switching/resonant frequencies high enough to support efficient high-frequency induction motor operation at speeds up to 50,000-RPA

Social strain and executive function across the lifespan: The dark (and light) sides of social engagement

PubMed Central

Tun, Patricia A.; Miller-Martinez, Dana; Lachman, Margie E.; Seeman, Teresa

2012-01-01

We investigated how the association between social strain and cognitive efficiency varies with task demands across adulthood, from latencies on simpler speeded tasks to tests involving executive function. Participants (N= 3280) were drawn from the MIDUS survey, a large, diverse national sample of adults who completed cognitive tests including speeded task-switching (Tun & Lachman, 2008). After controlling for demographic and health variables, we found that higher levels of reported social strain were associated with slower processing speed, particularly for the complex task-switching test relative to simpler speeded tests. Effects of strain were greatest for those with the lowest general cognitive ability. Moreover, those with very high levels of social strain but low levels of social support gave the poorest task-switching performance. These findings provide further evidence for the complex relationship between the social environment and cognition across adulthood, particularly the association between efficiency of executive functions and negative social interactions. PMID:22873285

Spool-type control valve assembly with reduced spool stroke for hydraulic belt-and-pulley type continuously variable transmission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Itoh, H.; Akashi, T.; Takada, M.

1987-03-31

This patent describes a hydraulic control system for controlling a speed ratio of a hydraulically-operated continuously variable transmission of belt-and-pulley type having a variable-diameter pulley and a hydraulic cylinder for changing an effective diameter of the variable diameter-pulley of the transmission. The hydraulic control system includes a speed-ratio control valve assembly for controlling the supply and discharge of a pressurized fluid to and from the hydraulic cylinder to thereby change the speed ratio of the transmission. The speed-ratio control valve assembly comprises: a shift-direction switching valve unit disposed in fluid supply and discharge conduits communicating with the hydraulic cylinder, formore » controlling a direction in which the speed ratio of the transmission is varied; a shift-speed control valve unit of spool-valve type connected to the shift-direction switching valve unit. The shift-speed control valve unit is selectively placed in a first state in which the fluid supply and discharge flows to and from the hydraulic cylinder through the conduits are permitted, or in a second state in which the fluid supply flow is restricted while the fluid discharge flow is inhibited; an actuator means for placing the shift speed control valve unit alternately in the first and second states to control a rate of variation in the speed ratio of the transmission in the direction established by the shift-direction switching valve unit.« less

Recommendation of Sensors for Vehicle Transmission Diagnostics

DTIC Science & Technology

2012-05-01

and a pressure switch module form the Control value module. A thermistor is contained within the pressure switch module in order to monitor the sump...fluid temperature. Sensor information is provided to the TCM through various sensors such as throttle position, speed sensor, pressure switch module

Halbach array DC motor/generator

DOEpatents

Merritt, B.T.; Dreifuerst, G.R.; Post, R.F.

1998-01-06

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An ``inside-out`` design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then ``switched`` or ``commutated`` to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives. 17 figs.

Halbach array DC motor/generator

DOEpatents

Merritt, Bernard T.; Dreifuerst, Gary R.; Post, Richard F.

1998-01-01

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Room-temperature ballistic energy transport in molecules with repeating units

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubtsova, Natalia I.; Nyby, Clara M.; Zhang, Hong

2015-06-07

In materials, energy can propagate by means of two limiting regimes: diffusive and ballistic. Ballistic energy transport can be fast and efficient and often occurs with a constant speed. Using two-dimensional infrared spectroscopy methods, we discovered ballistic energy transport via individual polyethylene chains with a remarkably high speed of 1440 m/s and the mean free path length of 14.6 Å in solution at room temperature. Whereas the transport via the chains occurs ballistically, the mechanism switches to diffusive with the effective transport speed of 130 m/s at the end-groups attached to the chains. A unifying model of the transport inmore » molecules is presented with clear time separation and additivity among the transport along oligomeric fragments, which occurs ballistically, and the transport within the disordered fragments, occurring diffusively. The results open new avenues for making novel elements for molecular electronics, including ultrafast energy transporters, controlled chemical reactors, and sub-wavelength quantum nanoseparators.« less

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

PubMed

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Organic solid state optical switches and method for producing organic solid state optical switches

DOEpatents

Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

1993-01-01

This invention consists of a light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, and a method for making said compound.

Switching electrochromic performance improvement enabled by highly developed mesopores and oxygen vacancy defects of Fe-doped WO3 films

NASA Astrophysics Data System (ADS)

Koo, Bon-Ryul; Kim, Kue-Ho; Ahn, Hyo-Jin

2018-09-01

In recent years, owing to the capability to reversibly adjust transparency, reflection, and color by the low electric field, electrochromic devices (ECDs) have received an extensive attention for their potential use in optoelectronic applications. However, considering that the performances of the ECDs, including coloration efficiency (CE, <30.0 cm2/C) and switching speed (>10.0 s), are still low for an effective applied use, critical efforts are needed to push the development of a unique nanostructure film to improve electrochromic (EC) performances. Specifically, as the large-scale applications (e.g. refrigerators, vehicles, and airplanes) of the ECDs have been recently developed, the study for improving switching speed is urgently needed for commercialization of the devices. In this context, the present study reports a novel nanostructure film of Fe-doped WO3 films with highly developed mesopores and oxygen vacancy defects, fabricated using the Fe agent and the camphene-assisted sol-gel method. Fe-doped WO3 films with highly developed mesopores and oxygen vacancy defects show remarkable EC performances with both fast switching speed (2.8 s for the coloration speed and 0.3 s for the bleaching speed) and high CE (71.1 cm2/C). These two aspects contribute to the synergistic effects of optimized Fe doping and camphene on the films and have outstanding values as compared to previously reported results of WO3-based materials. Specifically, the fast switching speed is attributed to the shortened Li+ diffusion pathway of the highly developed mesopores; and the other is the improved electrical conductivity of the highly increased oxygen vacancy defects. In addition, the high CE value is due to an efficient charge transport as the result of a more effective electroactive contact of the morphology with highly developed mesopores, resulting in a large transmittance modulation with a small intercalated charge density.

Demonstration of 720×720 optical fast circuit switch for intra-datacenter networks

NASA Astrophysics Data System (ADS)

Ueda, Koh; Mori, Yojiro; Hasegawa, Hiroshi; Matsuura, Hiroyuki; Ishii, Kiyo; Kuwatsuka, Haruhiko; Namiki, Shu; Sato, Ken-ichi

2016-03-01

Intra-datacenter traffic is growing more than 20% a year. In typical datacenters, many racks/pods including servers are interconnected via multi-tier electrical switches. The electrical switches necessitate power-consuming optical-to- electrical (OE) and electrical-to-optical (EO) conversion, the power consumption of which increases with traffic. To overcome this problem, optical switches that eliminate costly OE and EO conversion and enable low power consumption switching are being investigated. There are two major requirements for the optical switch. First, it must have a high port count to construct reduced tier intra-datacenter networks. Second, switching speed must be short enough that most of the traffic load can be offloaded from electrical switches. Among various optical switches, we focus on those based on arrayed-waveguide gratings (AWGs), since the AWG is a passive device with minimal power consumption. We previously proposed a high-port-count optical switch architecture that utilizes tunable lasers, route-and-combine switches, and wavelength-routing switches comprised of couplers, erbium-doped fiber amplifiers (EDFAs), and AWGs. We employed conventional external cavity lasers whose wavelength-tuning speed was slower than 100 ms. In this paper, we demonstrate a large-scale optical switch that offers fast wavelength routing. We construct a 720×720 optical switch using recently developed lasers whose wavelength-tuning period is below 460 μs. We evaluate the switching time via bit-error-ratio measurements and achieve 470-μs switching time (includes 10-μs guard time to handle EDFA surge). To best of our knowledge, this is the first demonstration of such a large-scale optical switch with practical switching time.

Switching-angle sample spinning NMR probe with a commercially available 20 kHz spinning system

NASA Astrophysics Data System (ADS)

Mizuno, Takashi; Takegoshi, K.; Terao, Takehiko

2004-11-01

A switching-angle sample spinning (SASS) probe workable at high spinning speeds was developed using a commercially available rotor/housing system. Details of the construction are described. As application examples of the SASS probe, we report experiments of powder pattern separation at the spinning speed of 20 kHz and broadband 13C- 13C polarization transfer at 16 kHz.

Resonant Tunneling Quantum Well Integrated Optical Waveguide Modulator/ Switch

DTIC Science & Technology

1994-07-01

time, which leads to the high speed operation. In this Phase I project, POC designed the RTDBQW device, including the optimization and precise definition...Effect of Free Carriers ............ 7 3.0 CHANNEL WAVEGUIDE DESIGN AND OPTIMIZATION ................... 10 3.1 Design Of Directional Coupling Mach...are essential for high speed signal routing and regeneration. POC’s design relies on the integration of an optical guided wave switch/modulator with a

BiCMOS circuit technology for a 704 MHz ATM switch LSI

NASA Astrophysics Data System (ADS)

Ohtomo, Yusuke; Yasuda, Sadayuki; Togashi, Minoru; Ino, Masayuki; Tanabe, Yasuyuki; Inoue, Jun-Ichi; Nogawa, Masafumi; Hino, Shigeki

1994-05-01

This paper describes BiCMOS level-converter circuits and clock circuits that increase VLSI interface speed to 1 GHz, and their application to a 704 MHz ATM switch LSI. An LSI with high speed interface requires a BiCMOS multiplexer/demultiplexer (MUX/DEMUX) on the chip to reduce internal operation speed. A MUX/DEMUX with minimum power dissipation and a minimum pattern area can be designed using the proposed converter circuits. The converter circuits, using weakly cross-coupled CMOS inverters and a voltage regulator circuit, can convert signal levels between LCML and positive CMOS at a speed of 500 MHz. Data synchronization in the high speed region is ensured by a new BiCMOS clock circuit consisting of a pure ECL path and retiming circuits. The clock circuit reduces the chip latency fluctuation of the clock signal and absorbs the delay difference between the ECL clock and data through the CMOS circuits. A rerouting-Banyan (RRB) ATM switch, employing both the proposed converter circuits and the clock circuits, has been fabricated with 0.5 micron BiCMOS technology. The LSI, composed of CMOS 15 K gate LOGIC, 8 Kb RAM, 1 Kb FIFO and ECL 1.6 K gate LOGIC, achieved an operation speed of 704-MHz with power dissipation of 7.2 W.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Design and analysis of a novel doubly salient permanent- magnet generator

NASA Astrophysics Data System (ADS)

Sarlioglu, Bulent

Improvements in permanent magnets and power electronics technologies have made it possible to devise different configurations of electrical machines which were not previously possible to implement. In this dissertation, a novel Doubly Salient Permanent Magnet (DSPM) generator has been designed, analyzed, and tested. The DSPM generator has four stator poles and six rotor poles. Two high density permanent magnets are located in the stator yoke. Since there are no windings or permanent magnets in the rotor, the DSPM generator has several advantages: the rotor has low inertia, no copper loss, no PM attachments, no brushes, and no slip rings. This type of rotor can be manufactured easily, and can be run at very high speeds as in the case of a switched reluctance machine. Compared to induction and switched reluctance machines, the DSPM generator can produce more power from the same geometry. Moreover, the efficiency of the DSPM generator is higher, since there is no copper loss associated with excitation of the machine. Another advantage of the DSPM generator is that the output AC voltage can easily be rectified by a diode bridge rectifier, while in the case of the switched reluctance machine one needs to use active semiconductor switches for power generation. If greater utilization and control of power production capability are desired, the AC output of the DSPM generator can be rectified using an active converter. In this dissertation, a novel doubly salient permanent magnet generator is introduced. First, the theory of the DSPM generator is given. Later, this novel generator is investigated using conventional magnetic circuits, nonlinear finite element analysis, and simulations with first order approximations and nonlinear modeling. It is compared with other generators. Static and no-load testing of the prototype DSPM generator are presented, and generator performance is evaluated with various power electronic circuits.

High-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical interference.

PubMed

Huang, Yingyan; Ho, Seng-Tiong

2008-10-13

We show that a photonic transistor device can be realized via the manipulation of optical interference by optically controlled gain or absorption in novel ways, resulting in efficient transistor signal gain and switching action. Exemplary devices illustrate two complementary device types with high operating speed, microm size, microW switching power, and switching gain. They can act in tandem to provide a wide variety of operations including wavelength conversion, pulse regeneration, and logical operations. These devices could have a Transistor Figure-of-Merits >10(5) times higher than current chi((3)) approaches and are highly attractive.

Bilayer avalanche spin-diode logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien; Fadel, Eric R.

2015-11-15

A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

Electron-Impact-Ionization and Electron-Attachment Cross Sections of Radicals Important in Transient Gaseous Discharges.

DTIC Science & Technology

1988-02-05

for understanding the microscopic processes of electrical discharges and for designing gaseous discharge switches. High power gaseous discharge switches...half-maximum) energy resolution. The electron gun and ion extraction were of the same design of Srivastava at the Jet Propulsion Laboratory. Ions...photons. - The observed current switching can be applied to the design of discharge switches. Elec- tron transport parameters are needed for the

Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

DOEpatents

Wasielewski, Michael R.; Gaines, George L.; Niemczyk, Mark P.; Johnson, Douglas G.; Gosztola, David J.; O'Neil, Michael P.

1996-01-01

A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound.

High-speed spectral domain polarization-sensitive OCT using a single InGaAs line-scan camera and an optical switch

NASA Astrophysics Data System (ADS)

Lee, Sang-Won; Jeong, Hyun-Woo; Kim, Beop-Min

2010-02-01

We demonstrated high-speed spectral domain polarization-sensitive optical coherence tomography (SD-PSOCT) using a single InGaAs line-scan camera and an optical switch at 1.3-μm region. The polarization-sensitive low coherence interferometer in the system was based on the original free-space PS-OCT system published by Hee et al. The horizontal and vertical polarization light rays split by polarization beam splitter were delivered and detected via an optical switch to a single spectrometer by turns instead of dual spectrometers. The SD-PSOCT system had an axial resolution of 8.2 μm, a sensitivity of 101.5 dB, and an acquisition speed of 23,496 Alines/s. We obtained the intensity, phase retardation, and fast axis orientation images of a biological tissue. In addition, we calculated the averaged axial profiles of the phase retardation in human skin.

A fast low-power optical memory based on coupled micro-ring lasers

NASA Astrophysics Data System (ADS)

Hill, Martin T.; Dorren, Harmen J. S.; de Vries, Tjibbe; Leijtens, Xaveer J. M.; den Besten, Jan Hendrik; Smalbrugge, Barry; Oei, Yok-Siang; Binsma, Hans; Khoe, Giok-Djan; Smit, Meint K.

2004-11-01

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20ps with 5.5fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

High-speed spectral domain polarization- sensitive optical coherence tomography using a single camera and an optical switch at 1.3 microm.

PubMed

Lee, Sang-Won; Jeong, Hyun-Woo; Kim, Beop-Min

2010-01-01

We propose high-speed spectral domain polarization-sensitive optical coherence tomography (SD-PS-OCT) using a single camera and a 1x2 optical switch at the 1.3-microm region. The PS-low coherence interferometer used in the system is constructed using free-space optics. The reflected horizontal and vertical polarization light rays are delivered via an optical switch to a single spectrometer by turns. Therefore, our system costs less to build than those that use dual spectrometers, and the processes of timing and triggering are simpler from the viewpoints of both hardware and software. Our SD-PS-OCT has a sensitivity of 101.5 dB, an axial resolution of 8.2 microm, and an acquisition speed of 23,496 A-scans per second. We obtain the intensity, phase retardation, and fast axis orientation images of a rat tail tendon ex vivo.

Experimental investigation of 4 K pulse tube refrigerator

NASA Astrophysics Data System (ADS)

Gao, J. L.; Matsubara, Y.

During the last decades superconducting electronics has been the most prominent area of research for small scale applications of superconductivity. It has experienced quite a stormy development, from individual low frequency devices to devices with high integration density and pico second switching time. Nowadays it offers small losses, high speed and the potential for large scale integration and is superior to semiconducting devices in many ways — apart from the need for cooling by liquid helium for devices based on classical superconductors like niobium, or cooling by liquid nitrogen or cryocoolers (40K to 77K) for high-T c superconductors like YBa 2Cu 3O 7. This article gives a short overview over the current state of the art on typical devices out of the main application areas of superconducting electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Graphene: an emerging electronic material.

PubMed

Weiss, Nathan O; Zhou, Hailong; Liao, Lei; Liu, Yuan; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-11-14

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Zhou, You; Fisher, Christopher J.; Ramanathan, Shriram; Treadway, Jacob P.

2013-05-01

Vanadium dioxide (VO2) is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>103) in both electrically (i.e., by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state, and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.

Ames Lab 101: Ultrafast Magnetic Switching

ScienceCinema

Wang; Jigang

2018-01-01

Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

All-optical switching of silicon disk resonator based on photothermal effect in metal-insulator-metal absorber.

PubMed

Shi, Yuechun; Chen, Xi; Lou, Fei; Chen, Yiting; Yan, Min; Wosinski, Lech; Qiu, Min

2014-08-01

Efficient narrowband light absorption by a metal-insulator-metal (MIM) structure can lead to high-speed light-to-heat conversion at a micro- or nanoscale. Such a MIM structure can serve as a heater for achieving all-optical light control based on the thermo-optical (TO) effect. Here we experimentally fabricated and characterized a novel all-optical switch based on a silicon microdisk integrated with a MIM light absorber. Direct integration of the absorber on top of the microdisk reduces the thermal capacity of the whole device, leading to high-speed TO switching of the microdisk resonance. The measurement result exhibits a rise time of 2.0 μs and a fall time of 2.6 μs with switching power as low as 0.5 mW; the product of switching power and response time is only about 1.3  mW·μs. Since no auxiliary elements are required for the heater, the switch is structurally compact, and its fabrication is rather easy. The device potentially can be deployed for new kinds of all-optical applications.

Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

DOEpatents

Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

1996-07-23

A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound are disclosed. 4 figs.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Low threshold all-optical crossbar switch on GaAs-GaAlAs channel waveguide arrays

NASA Astrophysics Data System (ADS)

Jannson, Tomasz; Kostrzewski, Andrew

1994-09-01

During the Phase 2 project entitled 'Low Threshold All-Optical Crossbar Switch on GaAs - GaAlAs Channel Waveguide Array,' Physical Optics Corporation (POC) developed the basic principles for the fabrication of all-optical crossbar switches. Based on this development. POC fabricated a 2 x 2 GaAs/GaAlAs switch that changes the direction of incident light with minimum insertion loss and nonlinear distortion. This unique technology can be used in both analog and digital networks. The applications of this technology are widespread. Because the all-optical network does not have any speed limitations (RC time constant), POC's approach will be beneficial to SONET networks, phased array radar networks, very high speed oscilloscopes, all-optical networks, IR countermeasure systems, BER equipment, and the fast growing video conferencing network market. The novel all-optical crossbar switch developed in this program will solve interconnect problems. and will be a key component in the widely proposed all-optical 200 Gb/s SONET/ATM networks.

Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

NASA Astrophysics Data System (ADS)

Ran, Ke; Rösner, Benedikt; Butz, Benjamin; Fink, Rainer H.; Spiecker, Erdmann

2016-10-01

The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

Occupational health hazards resulting from elevated work rate situations.

PubMed

Ohara, H; Nakagiri, S; Itani, T; Wake, K; Aoyama, H

1976-12-01

Some occupational health hazards resulting from an elevated rate of work due to recent mechanization and automatization are discussed on the basis of results of health examinations. A rapid increase of a cervicobrachial disorder among young cash register and packing machine operators has been observed. Switching to the use of electronic cash registers has been shown to have only limited efficacy due to increased operation speed, and high-speed complex finger and hand movements of packer operators have also proven to be as hazardous as key-board operations. The high incidence of low-back pain, in particular gradually developing pain, among workers in electric power supply work has been suggested to be the result of quick and intensified work to meet increasing supply demand. Likewise, the workload of electric locomotive and bullet train drivers has increased in accordance with increased train speeds, and has been shown to have had significant effects on their health particularly in regards to neural strain, intra-cab environment such as air pressure change, vibration, and noise, and rotation on irregular shifts. New steps seem required therefore to meet the new health problems arising from a combination of modern technological changes and elevated working speeds.

Optimal PID gain schedule for hydrogenerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orelind, G.; Wozniak, L.; Medanic, J.

1989-09-01

This paper describes the development and testing of a digital gain switching governor for hydrogenerators. Optimal gains were found at different load points by minimizing a quadratic performance criterion prior to controller operating. During operation, the gain sets are switched in depending on the gate position and speed error magnitude. With gain switching operating, the digital governor was shown to have a substantial reduction of noise on the command signal and up to 42% faster responses to power requests. Non-linear control strategies enabled the digital governor to have a 2.5% to 2% reduction in speed overshoot on startups, and anmore » 8% to 1% reduction in undershoot on load rejections as compared to the analog.« less

High-speed true random number generation based on paired memristors for security electronics

NASA Astrophysics Data System (ADS)

Zhang, Teng; Yin, Minghui; Xu, Changmin; Lu, Xiayan; Sun, Xinhao; Yang, Yuchao; Huang, Ru

2017-11-01

True random number generator (TRNG) is a critical component in hardware security that is increasingly important in the era of mobile computing and internet of things. Here we demonstrate a TRNG using intrinsic variation of memristors as a natural source of entropy that is otherwise undesirable in most applications. The random bits were produced by cyclically switching a pair of tantalum oxide based memristors and comparing their resistance values in the off state, taking advantage of the more pronounced resistance variation compared with that in the on state. Using an alternating read scheme in the designed TRNG circuit, the unbiasedness of the random numbers was significantly improved, and the bitstream passed standard randomness tests. The Pt/TaO x /Ta memristors fabricated in this work have fast programming/erasing speeds of ˜30 ns, suggesting a high random number throughput. The approach proposed here thus holds great promise for physically-implemented random number generation.

High-speed true random number generation based on paired memristors for security electronics.

PubMed

Zhang, Teng; Yin, Minghui; Xu, Changmin; Lu, Xiayan; Sun, Xinhao; Yang, Yuchao; Huang, Ru

2017-11-10

True random number generator (TRNG) is a critical component in hardware security that is increasingly important in the era of mobile computing and internet of things. Here we demonstrate a TRNG using intrinsic variation of memristors as a natural source of entropy that is otherwise undesirable in most applications. The random bits were produced by cyclically switching a pair of tantalum oxide based memristors and comparing their resistance values in the off state, taking advantage of the more pronounced resistance variation compared with that in the on state. Using an alternating read scheme in the designed TRNG circuit, the unbiasedness of the random numbers was significantly improved, and the bitstream passed standard randomness tests. The Pt/TaO x /Ta memristors fabricated in this work have fast programming/erasing speeds of ∼30 ns, suggesting a high random number throughput. The approach proposed here thus holds great promise for physically-implemented random number generation.

Electronic switching circuit uses complementary non-linear components

NASA Technical Reports Server (NTRS)

Zucker, O. S.

1972-01-01

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

Speed and Accuracy of Accessing Information in Working Memory: An Individual Differences Investigation of Focus Switching

ERIC Educational Resources Information Center

Unsworth, Nash; Engle, Randall W.

2008-01-01

Three experiments examined the nature of individual differences in switching the focus of attention in working memory. Participants performed 3 versions of a continuous counting task that required successive updating and switching between counts. Across all 3 experiments, individual differences in working memory span and fluid intelligence were…

Ultrafast Directional Beam Switching in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast directional beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 microns in diameter placed about 1 micron apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degrees.

Spacecraft IF switch matrix for wideband service applications in 30/20 GHz communications satellite systems: Proof-of-concept model, executive summary

NASA Technical Reports Server (NTRS)

Ho, P. T.; Coban, E.; Pelose, J.

1983-01-01

The design and development of a unique coupler crossbar 20 x 20 microwave switch matrix are described. The test results of the proof of concept model that meets the requirements for a high speed satellite switched, time division multiple access (SS-TDMA) system are presented.

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

General Slowing and Education Mediate Task Switching Performance Across the Life-Span

PubMed Central

Moretti, Luca; Semenza, Carlo; Vallesi, Antonino

2018-01-01

Objective: This study considered the potential role of both protective factors (cognitive reserve, CR) and adverse ones (general slowing) in modulating cognitive flexibility in the adult life-span. Method: Ninety-eight individuals performed a task-switching (TS) paradigm in which we adopted a manipulation concerning the timing between the cue and the target. Working memory demands were minimized by using transparent cues. Additionally, indices of cognitive integrity, depression, processing speed and different CR dimensions were collected and used in linear models accounting for TS performance under the different time constraints. Results: The main results showed similar mixing costs and higher switching costs in older adults, with an overall age-dependent effect of general slowing on these costs. The link between processing speed and TS performance was attenuated when participants had more time to prepare. Among the different CR indices, formal education only was associated with reduced switch costs under time pressure. Discussion: Even though CR is often operationalized as a unitary construct, the present research confirms the benefits of using tools designed to distinguish between different CR dimensions. Furthermore, our results provide empirical support to the assumption that processing speed influence on executive performance depends on time constraints. Finally, it is suggested that whether age differences appear in terms of switch or mixing costs depends on working memory demands (which were low in our tasks with transparent cues). PMID:29780341

E-field induced resistive switch in metal/praseodymium calcium manganite interfaces: A model for future nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Das, Nilanjan

Among the various candidates for non-volatile random access memory (RAM), interfacial resistive switch in Ag/Pr0.7Ca0.3 MnO3 (PCMO) configuration has drawn major attention in recent years due to its potential as a high storage density (˜ terabyte) device. However, the diverse nature of the resistive switch in different systems makes the development of a unifying model for its underlying physics very difficult. This dissertation will address both issues, namely, characterization of switches for device applications and development of a system-independent generic model, in detail. In our work, we have studied the properties electric pulse induced interfacial switch in electrode/PCMO system. A very fast speed ("write speed") of 100 ns, threshold ("programming voltage") as low as 2 V (for micro electrodes), and non-volatility ("data retention") of switched states have been achieved. A clear distinction between fast switch and sub-threshold slow quasistatic-dc switch has been made. Results obtained from time-dependence studies and impedance spectroscopy suggest that defect creation/annihilation, such as broken bonds (under very high field at interface, 107V/cm), is likely the mechanism for the sub-micros fast switching. On the other hand, slow accumulative process, such as electromigration of point defects, are responsible for the subthreshold quasi-dc switch. Scanning probe imaging has revealed the nanoscale inhomogeneity of the switched surfaces, essential for observing a resistive switch. Evolution of such structures has been observed under surface pre-training. Device scalability has been tested by creating reversible modification of surface conductivities with atomic force microscopy, thus creating the "nano-switch" (limited to a region of 10--100 nm).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Triggered plasma opening switch

DOEpatents

Mendel, Clifford W.

1988-01-01

A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

High-speed wavelength switching of tunable MEMS vertical cavity surface emitting laser by ringing suppression

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Nishimura, Shun; Nakahama, Masanori; Matsutani, Akihiro; Sakaguchi, Takahiro; Koyama, Fumio

2018-04-01

For use in wavelength division multiplexing (WDM) with high-speed wavelength routing functions, the fast wavelength switching of tunable lasers is a key function. A tunable MEMS vertical cavity surface emitting laser (VCSEL) is a good candidate as a light source for this purpose. The cantilever in MEMS VCSELs has a high mechanical resonance frequency thanks to its small size, but the switching time is limited by the ringing of the cantilever structure. In this paper, we analyzed the mechanical behavior of a cantilever MEMS mirror and demonstrated ringing-free operation with an engineered voltage signal. The applied voltage waveform was optimized in a two-step format and we experimentally obtained ringing free wavelength switching. We measured the transient response of the wavelength by inserting a tunable filter, exhibiting the settling time of less than 2.5 µs, which corresponds to a half period of the cantilever resonance frequency.

Electro-optical logic gates based on graphene-silicon waveguides

NASA Astrophysics Data System (ADS)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

REMOTE CONTROLLED SWITCHING DEVICE

DOEpatents

Hobbs, J.C.

1959-02-01

An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

Reinventing the wheel: comparison of two wheel cage styles for assessing mouse voluntary running activity.

PubMed

Seward, T; Harfmann, B D; Esser, K A; Schroder, E A

2018-04-01

Voluntary wheel cage assessment of mouse activity is commonly employed in exercise and behavioral research. Currently, no standardization for wheel cages exists resulting in an inability to compare results among data from different laboratories. The purpose of this study was to determine whether the distance run or average speed data differ depending on the use of two commonly used commercially available wheel cage systems. Two different wheel cages with structurally similar but functionally different wheels (electromechanical switch vs. magnetic switch) were compared side-by-side to measure wheel running data differences. Other variables, including enrichment and cage location, were also tested to assess potential impacts on the running wheel data. We found that cages with the electromechanical switch had greater inherent wheel resistance and consistently led to greater running distance per day and higher average running speed. Mice rapidly, within 1-2 days, adapted their running behavior to the type of experimental switch used, suggesting these running differences are more behavioral than due to intrinsic musculoskeletal, cardiovascular, or metabolic limits. The presence of enrichment or location of the cage had no detectable impact on voluntary wheel running. These results demonstrate that mice run differing amounts depending on the type of cage and switch mechanism used and thus investigators need to report wheel cage type/wheel resistance and use caution when interpreting distance/speed run across studies. NEW & NOTEWORTHY The results of this study highlight that mice will run different distances per day and average speed based on the inherent resistance present in the switch mechanism used to record data. Rapid changes in running behavior for the same mouse in the different cages demonstrate that a strong behavioral factor contributes to classic exercise outcomes in mice. Caution needs to be taken when interpreting mouse voluntary wheel running activity to include potential behavioral input and physiological parameters.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

78 FR 6202 - Airworthiness Directives; the Boeing Company

Federal Register 2010, 2011, 2012, 2013, 2014

2013-01-30

... Descent (If INITIATE Required). Passenger Oxygen Switch.... ON Thrust Levers CLOSE Speed Brakes FLIGHT... Engineer, Systems and Equipment Branch, ANM-130S, FAA, Seattle Aircraft Certification Office, 1601 Lind... regard. Request To Correct AFM Reference to Target Speed Delta Airlines (DAL) asked that the target speed...

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

STE/ICE (Simplified Test Equipment/Internal Combustion Engines) Design Guide for Vehicle Diagnostic Connector Assemblies

DTIC Science & Technology

1982-08-01

19 3.2 Diesel Engine Speed Transducer 20 3.3 Pressure Transducer 20 3.4 Temperature Transducer 22 3.5 Differential Pressure Switch 22 3.6 Differential... Pressure Switch , Multi-Point 22 3.7 Current Measurement Transducer 23 - 3.8 Electrolyte Level Probes 23 3.9 Diagnostic Connector 24 3.10 Harness...12258933 Differential Pressure Switch - Multi-point 12258934 K -. Differential Pressure Switch 12258938 Electrolyte Level Sensor 12258935 Shunt 1000

Ion-Transport Design for High-Performance Na+-Based Electrochromics.

PubMed

Li, Ran; Li, Kerui; Wang, Gang; Li, Lei; Zhang, Qiangqiang; Yan, Jinhui; Chen, Yao; Zhang, Qinghong; Hou, Chengyi; Li, Yaogang; Wang, Hongzhi

2018-04-24

Sodium ion (Na + )-based electrochemical systems have been extensively investigated in batteries and supercapacitors and also can be quality candidates for electrochromic (EC) devices. However, poor diffusion kinetics and severe EC performance degradation occur during the intercalation/deintercalation processes because the ionic radii of Na + are larger than those of conventional intercalation ions. Here, through intentional design of ion-transport channels in metal-organic frameworks (MOFs), Na + serves as an efficient intercalation ion for incorporation into a nanostructured electrode with a high diffusion coefficient of approximately 10 -8 cm 2 s -1 . As a result, the well-designed MOF-based EC device demonstrates desirable Na + EC performance, including fast switching speed, multicolor switching, and high stability. A smart "quick response code" display is fabricated using a mask-free laser writing method for application in the "Internet of Things". In addition, the concept of ion transport pathway design can be widely adopted for fabricating high-performance ion intercalation materials and devices for consumer electronics.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

ROADMs for reconfigurable metro networks

NASA Astrophysics Data System (ADS)

Homa, Jonathan; Bala, Krishna

2009-01-01

Reconfigurable Optical Add-Drop Multiplexers (ROADMs) are the key nodal sub-systems that are used to implement modern DWDM networks. They provide network flexibility by switching wavelengths among fibers under software control without expensive conversion to the electronic domain. They speed up provisioning time, reduce operational costs and eliminate human errors. Two general types of ROADMs are used in Metro optical networks, two-degree and multi-degree, where the degree refers to the numbers of DWDM fibers entering and exiting the ROADM node. A twodegree ROADM is like a location on a highway with off and on ramps to drop off and accept local traffic while a multidegree ROADM is like an interchange where highways meet and is used for interconnecting DWDM rings or for mesh networking. The paper describes two-degree and multi-degree ROADM architectures and how these relate to the technology alternatives used to implement the ROADMs themselves. Focus is provided on the role and expected evolution of the wavelength selective switch (WSS) which is the primary engine used to power ROADMs.

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density.

PubMed

Al-Haddad, Ahmed; Wang, Chengliang; Qi, Haoyuan; Grote, Fabian; Wen, Liaoyong; Bernhard, Jörg; Vellacheri, Ranjith; Tarish, Samar; Nabi, Ghulam; Kaiser, Ute; Lei, Yong

2016-09-07

Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (10(8)-10(9) cm(-2)), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.

Optically switched magnetism in photovoltaic perovskite CH3NH3(Mn:Pb)I3

PubMed Central

Náfrádi, B.; Szirmai, P.; Spina, M.; Lee, H.; Yazyev, O. V.; Arakcheeva, A.; Chernyshov, D.; Gibert, M.; Forró, L.; Horváth, E.

2016-01-01

The demand for ever-increasing density of information storage and speed of manipulation boosts an intense search for new magnetic materials and novel ways of controlling the magnetic bit. Here, we report the synthesis of a ferromagnetic photovoltaic CH3NH3(Mn:Pb)I3 material in which the photo-excited electrons rapidly melt the local magnetic order through the Ruderman–Kittel–Kasuya–Yosida interactions without heating up the spin system. Our finding offers an alternative, very simple and efficient way of optical spin control, and opens an avenue for applications in low-power, light controlling magnetic devices. PMID:27882917

Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

PubMed

Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

2007-07-01

We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

The DDN (Defense Data Network) Course,

DTIC Science & Technology

1986-04-01

devices will share the same node-to-node channels. * Simultaneous availability of source and destination is not required. * Speed and code conversion can...address multiple addresses simultaneously 3) Disadvantages of Message Switching Systems Not suited to real time or interactive use * Long and highly...transmission b) Unlike message switching, packet switching requires the -. simultaneous availability of source and destination. 64 -4 ) ..xa...e s

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Research and development of a NYNEX switched multi-megabit data service prototype system

NASA Astrophysics Data System (ADS)

Maman, K. H.; Haines, Robert; Chatterjee, Samir

1991-02-01

Switched Multi-megabit Data Service (SMDS) is a proposed high-speed packet-switched service which will support broadband applications such as Local Area Network (LAN) interconnections across a metropolitan area and beyond. This service is designed to take advantage of evolving Metropolitan Area Network (MAN) standards and technology which will provide customers with 45-mbps and 1 . 5-mbps access to high-speed public data communications networks. This paper will briefly discuss SMDS and review its architecture including the Subscriber Network Interface (SNI) and the SMDS Interface Protocol (SIP). It will review the fundamental features of SMDS such as address screening addressing scheme and access classes. Then it will describe the SMDS prototype system developed in-house by NYNEX Science Technology.

Harnessing the polariton drag effect to design an electrically controlled optical switch.

PubMed

Berman, Oleg L; Kezerashvili, Roman Ya; Kolmakov, German V

2014-10-28

We propose a design of a Y-shaped electrically controlled optical switch based on the studies of propagation of an exciton-polariton condensate in a patterned optical microcavity with an embedded quantum well. The polaritons are driven by a time-independent force due to the microcavity wedge shape and by a time-dependent drag force owing to the interaction of excitons in a quantum well and the electric current running in a neighboring quantum well. It is demonstrated that by applying the drag force one can direct more than 90% of the polariton flow toward the desired branch of the switch with no hysteresis. By considering the transient dynamics of the polariton condensate, we estimate the response speed of the switch as 9.1 GHz. We also propose a design of the polariton switch in a flat microcavity based on the geometrically identical Y-shaped quantum wells where the polariton flow is only induced by the drag force. The latter setup enables one to design a multiway switch that can act as an electrically controlled optical transistor with on and off functions. Finally, we performed the simulations for a microcavity with an embedded gapped graphene layer and demonstrated that in this case the response speed of the switch can be increased up to 14 GHz for the same switch size. The simulations also show that the energy gap in the quasiparticle spectrum in graphene can be utilized as an additional parameter that controls the propagation of the signals in the switch.

Adaptation of superconducting fault current limiter to high-speed reclosing

NASA Astrophysics Data System (ADS)

Koyama, T.; Yanabu, S.

2009-10-01

Using a high temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor might break in some cases because of its excessive generation of heat. Therefore, it is desirable to interrupt early the current that flows to superconductor. So, we proposed the SFCL using an electromagnetic repulsion switch which is composed of a superconductor, a vacuum interrupter and a by-pass coil, and its structure is simple. Duration that the current flow in the superconductor can be easily minimized to the level of less than 0.5 cycle using this equipment. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. There is duty of high-speed reclosing after interrupting fault current in the electric power system. After the fault current is interrupted, the back-up breaker is re-closed within 350 ms. So, the electromagnetic repulsion switch should return to former state and the superconductor should be recovered to superconducting state before high-speed reclosing. Then, we proposed the SFCL using an electromagnetic repulsion switch which employs our new reclosing function. We also studied recovery time of the superconductor, because superconductor should be recovered to superconducting state within 350 ms. In this paper, the recovery time characteristics of the superconducting wire were investigated. Also, we combined the superconductor with the electromagnetic repulsion switch, and we did performance test. As a result, a high-speed reclosing within 350 ms was proven to be possible.

78 FR 18531 - Airworthiness Directives; Learjet Inc. Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-27

... cause damage to various components, including the MLG squat switches, brake hydraulic tubes, wheel speed... airplanes. This proposed AD was prompted by a report of a high-speed rejected takeoff caused by all four... necessary; and, for certain airplanes; installing a new wheel speed detect box assembly, nutplates, and...

Piezoelectric-based self-powered electronic adjustable impulse switches

NASA Astrophysics Data System (ADS)

Rastegar, Jahangir; Kwok, Philip

2018-03-01

Novel piezoelectric-based self-powered impulse detecting switches are presented. The switches are designed to detect shock loading events resulting in acceleration or deceleration above prescribed levels and durations. The prescribed acceleration level and duration thresholds are adjustable. They are provided with false trigger protection logic. The impulse switches are provided with electronic and logic circuitry to detect prescribed impulse events and reject events such as high amplitude but short duration shocks, and transportation vibration and similar low amplitude and relatively long duration events. They can be mounted directly onto electronics circuit boards, thereby significantly simplifying the electrical and electronic circuitry, simplifying the assembly process and total cost, significantly reducing the occupied volume, and in some applications eliminating the need for physical wiring to and from the impulse switches. The design of prototypes and testing under realistic conditions are presented.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE PAGES

Ji, Shiqi; Zheng, Sheng; Wang, Fei; ...

2017-07-06

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Cognitive switching processes in young people with attention-deficit/hyperactivity disorder.

PubMed

Oades, Robert D; Christiansen, Hanna

2008-01-01

Patients with attention-deficit/hyperactivity disorder (ADHD) can be slow at switching between stimuli, or between sets of stimuli to control behaviour appropriate to changing situations. We examined clinical and experimental parameters that may influence the speed of such processes measured in the trail-making (TMT) and switch-tasks in cases with ADHD combined type, their non-affected siblings and unrelated healthy controls. The latency for completion of the trail-making task controlling for psychomotor processing (TMT-B-A) was longer for ADHD cases, and correlated with Conners' ratings of symptom severity across all subjects. The effect decreased with age. Switch-task responses to questions of "Which number?" and "How many?" between sets of 1/111 or 3/333 elicited differential increases in latency with condition that affected all groups. But there was evidence for increased symptom-related intra-individual variability among the ADHD cases, and across all subjects. Young siblings showed familiality for some measures of TMT and switch-task performance but these were modest. The potential influences of moderator variables on the efficiency of processing stimulus change rather than the speed of processing are discussed.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Shiqi; Zheng, Sheng; Wang, Fei

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

An advanced robust method for speed control of switched reluctance motor

NASA Astrophysics Data System (ADS)

Zhang, Chao; Ming, Zhengfeng; Su, Zhanping; Cai, Zhuang

2018-05-01

This paper presents an advanced robust controller for the speed system of a switched reluctance motor (SRM) in the presence of nonlinearities, speed ripple, and external disturbances. It proposes that the adaptive fuzzy control is applied to regulate the motor speed in the outer loop, and the detector is used to obtain rotor detection in the inner loop. The new fuzzy logic tuning rules are achieved from the experience of the operator and the knowledge of the specialist. The fuzzy parameters are automatically adjusted online according to the error and its change of speed in the transient period. The designed detector can obtain the rotor's position accurately in each phase module. Furthermore, a series of contrastive simulations are completed between the proposed controller and proportion integration differentiation controller including low speed, medium speed, and high speed. Simulations show that the proposed robust controller enables the system reduced by at least 3% in overshoot, 6% in rise time, and 20% in setting time, respectively, and especially under external disturbances. Moreover, an actual SRM control system is constructed at 220 V 370 W. The experiment results further prove that the proposed robust controller has excellent dynamic performance and strong robustness.

Quantum switching of π-electron rotations in a nonplanar chiral molecule by using linearly polarized UV laser pulses.

PubMed

Mineo, Hirobumi; Yamaki, Masahiro; Teranishi, Yoshiaki; Hayashi, Michitoshi; Lin, Sheng Hsien; Fujimura, Yuichi

2012-09-05

Nonplanar chiral aromatic molecules are candidates for use as building blocks of multidimensional switching devices because the π electrons can generate ring currents with a variety of directions. We employed (P)-2,2'-biphenol because four patterns of π-electron rotations along the two phenol rings are possible and theoretically determine how quantum switching of the π-electron rotations can be realized. We found that each rotational pattern can be driven by a coherent excitation of two electronic states under two conditions: one is the symmetry of the electronic states and the other is their relative phase. On the basis of the results of quantum dynamics simulations, we propose a quantum control method for sequential switching among the four rotational patterns that can be performed by using ultrashort overlapped pump and dump pulses with properly selected relative phases and photon polarization directions. The results serve as a theoretical basis for the design of confined ultrafast switching of ring currents of nonplanar molecules and further current-induced magnetic fluxes of more sophisticated systems.

Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors

NASA Astrophysics Data System (ADS)

Wang, Kangpeng; Feng, Yanyan; Chang, Chunxia; Zhan, Jingxin; Wang, Chengwei; Zhao, Quanzhong; Coleman, Jonathan N.; Zhang, Long; Blau, Werner J.; Wang, Jun

2014-08-01

A series of layered molybdenum dichalcogenides, i.e., MoX2 (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX2 dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS2 and MoSe2 dispersions after higher speed centrifugation (10 000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc.A series of layered molybdenum dichalcogenides, i.e., MoX2 (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX2 dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS2 and MoSe2 dispersions after higher speed centrifugation (10 000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc. Electronic supplementary information (ESI) available: Electron scattering patterns from TEM characterizations of MX2 nanosheets; CA Z-scan results of graphene dispersions in the ps region. See DOI: 10.1039/c4nr02634a

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

PubMed Central

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-01-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

Scalable sub-micron patterning of organic materials toward high density soft electronics

DOE PAGES

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Texturing Copper To Reduce Secondary Emission Of Electrons

NASA Technical Reports Server (NTRS)

Jensen, Kenneth A.; Curren, Arthur N.; Roman, Robert F.

1995-01-01

Ion-beam process produces clean, deeply textured surfaces on copper substrates with reduced secondary electron emission. In process, molybdenum ring target positioned above and around copper substrate. Target potential repeatedly switched on and off. Switching module described in "High-Voltage MOSFET Switching Circuit" (LEW-15986). Useful for making collector electrodes for traveling-wave-tube and klystron microwave amplifiers, in which secondary emission of electrons undesirable because of reducing efficiency.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

PubMed

Mitrofanov, Kirill V; Fons, Paul; Makino, Kotaro; Terashima, Ryo; Shimada, Toru; Kolobov, Alexander V; Tominaga, Junji; Bragaglia, Valeria; Giussani, Alessandro; Calarco, Raffaella; Riechert, Henning; Sato, Takahiro; Katayama, Tetsuo; Ogawa, Kanade; Togashi, Tadashi; Yabashi, Makina; Wall, Simon; Brewe, Dale; Hase, Muneaki

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

DOE PAGES

Mitrofanov, Kirill V.; Fons, Paul; Makino, Kotaro; ...

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge 2Sb 2Te 5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structuremore » experiment confirms the existence of an intermediate state with disordered bonds. Furthermore, this newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.« less

Indicator system provides complete data of engine cylinder pressure variation

NASA Technical Reports Server (NTRS)

Mc Jones, R. W.; Morgan, N. E.

1966-01-01

Varying reference pressure used together with a balanced pressure pickup /a diaphragm switch/ to switch the electric output of the pressure transducer in a reference pressure line obtains precise engine cylinder pressure data from a high speed internal combustion engine.

Study of Electromagnetic Repulsion Switch to High Speed Reclosing and Recover Time Characteristics of Superconductor

NASA Astrophysics Data System (ADS)

Koyama, Tomonori; Kaiho, Katsuyuki; Yamaguchi, Iwao; Yanabu, Satoru

Using a high-temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor and vacuum interrupter as the commutation switch were connected in parallel using a bypass coil. When the fault current flows in this equipment, the superconductor is quenched and the current is then transferred to the parallel coil due to the voltage drop in the superconductor. This large current in the parallel coil actuates the magnetic repulsion mechanism of the vacuum interrupter and the current in the superconductor is broken. Using this equipment, the current flow time in the superconductor can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. This system has many merits. So, we introduced to electromagnetic repulsion switch. There is duty of high speed re-closing after interrupting fault current in the electrical power system. So the SFCL should be recovered to superconducting state before high speed re-closing. But, superconductor generated heat at the time of quench. It takes time to recover superconducting state. Therefore it is a matter of recovery time. In this paper, we studied recovery time of superconductor. Also, we proposed electromagnetic repulsion switch with reclosing system.

High speed Deans switch for low duty cycle comprehensive two-dimensional gas chromatography.

PubMed

Ghosh, Abhijit; Bates, Carly T; Seeley, Stacy K; Seeley, John V

2013-05-24

A new high-speed valve-based modulator has been designed and tested for use in comprehensive two-dimensional gas chromatography (GC×GC). The modulator is a Deans switch constructed from two micro-volume fittings and a solenoid valve. Modulator performance was characterized over a wide range of device settings including the magnitude of the switching flow, the gap between the tips of the primary and secondary column, the primary column flow rate, and the carrier gas identity. Under optimized conditions, the modulator was found to be capable of generating narrow pulses (<50ms) of primary effluent with a 2mL/min secondary column flow. This capability will ultimately allow the modulator to be used with GC×GC separations employing a wide range of detectors and secondary column geometries. The main disadvantage of this modulator is that it employs a low sampling duty cycle, and thus it produces separations with sensitivities that are lower than those produced with thermal modulators or differential flow modulators. The efficacy of the new high-speed Deans switch modulator was demonstrated through the GC×GC separation of a hydrocarbon standard and gasoline. Precise quantitation of individual components was possible provided the modulation ratio was kept greater than 2.0. Copyright © 2013 Elsevier B.V. All rights reserved.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

PubMed

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

Single-crystalline monolayer and multilayer graphene nano switches

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-03-01

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

Single-crystalline monolayer and multilayer graphene nano switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Peng; Cui, Tianhong, E-mail: tcui@me.umn.edu; Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

2014-03-17

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

Carbon Nanotube Switches for Communication and Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Epp, Larry; Wong, Eric W.; Kowalczyk, Robert

2008-01-01

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

40 CFR 86.1333-90 - Transient test cycle generation.

Code of Federal Regulations, 2012 CFR

2012-07-01

... zero percent speed specified in the engine dynamometer schedules (appendix I (f)(1), (f)(2), or (f)(3... feedback torque equal to zero (using, for example, clutch disengagement, speed to torque control switching... reference speed and reference torque are zero percent values. For each idle segment that is ten seconds or...

40 CFR 86.1333-90 - Transient test cycle generation.

Code of Federal Regulations, 2013 CFR

2013-07-01

... zero percent speed specified in the engine dynamometer schedules (appendix I (f)(1), (f)(2), or (f)(3... feedback torque equal to zero (using, for example, clutch disengagement, speed to torque control switching... reference speed and reference torque are zero percent values. For each idle segment that is ten seconds or...

40 CFR 86.1333-90 - Transient test cycle generation.

Code of Federal Regulations, 2011 CFR

2011-07-01

... zero percent speed specified in the engine dynamometer schedules (appendix I (f)(1), (f)(2), or (f)(3... feedback torque equal to zero (using, for example, clutch disengagement, speed to torque control switching... reference speed and reference torque are zero percent values. For each idle segment that is ten seconds or...

Power inverter with optical isolation

DOEpatents

Duncan, Paul G.; Schroeder, John Alan

2005-12-06

An optically isolated power electronic power conversion circuit that includes an input electrical power source, a heat pipe, a power electronic switch or plurality of interconnected power electronic switches, a mechanism for connecting the switch to the input power source, a mechanism for connecting comprising an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or input bus bars, an optically isolated drive circuit connected to the switch, a heat sink assembly upon which the power electronic switch or switches is mounted, an output load, a mechanism for connecting the switch to the output load, the mechanism for connecting including an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or output bus bars, at least one a fiber optic temperature sensor mounted on the heat sink assembly, at least one fiber optic current sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic voltage sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic current sensor mounted on the input power interconnection cable and/or input bus bar, and at least one fiber optic voltage sensor mounted on the input power interconnection cable and/or input bus bar.

High-contrast and fast electrochromic switching enabled by plasmonics

PubMed Central

Xu, Ting; Walter, Erich C.; Agrawal, Amit; Bohn, Christopher; Velmurugan, Jeyavel; Zhu, Wenqi; Lezec, Henri J.; Talin, A. Alec

2016-01-01

With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thin electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. We further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer. PMID:26814453

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio

NASA Astrophysics Data System (ADS)

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-01

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio.

PubMed

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-12

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

High-contrast and fast electrochromic switching enabled by plasmonics

DOE PAGES

Xu, Ting; Walter, Erich C.; Agrawal, Amit; ...

2016-01-27

With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thinmore » electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. In conclusion, we further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer.« less

Rapid thermal responsive conductive hybrid cryogels with shape memory properties, photothermal properties and pressure dependent conductivity.

PubMed

Deng, Zexing; Guo, Yi; Ma, Peter X; Guo, Baolin

2018-09-15

Stimuli responsive cryogels with multi-functionality have potential application for electrical devices, actuators, sensors and biomedical devices. However, conventional thermal sensitive poly(N-isopropylacrylamide) cryogels show slow temperature response speed and lack of multi-functionality, which greatly limit their practical application. Herein we present conductive fast (2 min for both deswelling and reswelling behavior) thermally responsive poly(N-isopropylacrylamide) cryogels with rapid shape memory properties (3 s for shape recovery), near-infrared (NIR) light sensitivity and pressure dependent conductivity, and further demonstrated their applications as temperature sensitive on-off switch, NIR light sensitive on-off switch, water triggered shape memory on-off switch and pressure dependent device. These cryogels were first prepared in dimethyl sulfoxide below its melting temperature in ice bath and subsequently put into aniline or pyrrole solution to in situ deposition of conducting polyaniline or polypyrrole nanoparticles. The continuous macroporous sponge-like structure provides cryogels with rapid responsivity both in deswelling, reswelling kinetics and good elasticity. After incorporating electrically conductive polyaniline or polypyrrole nanoaggregates, the hybrid cryogels exhibit desirable conductivity, photothermal property, pressure dependent conductivity and good cytocompatibility. These multifunctional hybrid cryogels make them great potential as stimuli responsive electrical device, tissue engineering scaffolds, drug delivery vehicle and electronic skin. Copyright © 2018 Elsevier Inc. All rights reserved.

Improving the Response of a Wheel Speed Sensor by Using a RLS Lattice Algorithm

PubMed Central

Hernandez, Wilmar

2006-01-01

Among the complete family of sensors for automotive safety, consumer and industrial application, speed sensors stand out as one of the most important. Actually, speed sensors have the diversity to be used in a broad range of applications. In today's automotive industry, such sensors are used in the antilock braking system, the traction control system and the electronic stability program. Also, typical applications are cam and crank shaft position/speed and wheel and turbo shaft speed measurement. In addition, they are used to control a variety of functions, including fuel injection, ignition timing in engines, and so on. However, some types of speed sensors cannot respond to very low speeds for different reasons. What is more, the main reason why such sensors are not good at detecting very low speeds is that they are more susceptible to noise when the speed of the target is low. In short, they suffer from noise and generally only work at medium to high speeds. This is one of the drawbacks of the inductive (magnetic reluctance) speed sensors and is the case under study. Furthermore, there are other speed sensors like the differential Hall Effect sensors that are relatively immune to interference and noise, but they cannot detect static fields. This limits their operations to speeds which give a switching frequency greater than a minimum operating frequency. In short, this research is focused on improving the performance of a variable reluctance speed sensor placed in a car under performance tests by using a recursive least-squares (RLS) lattice algorithm. Such an algorithm is situated in an adaptive noise canceller and carries out an optimal estimation of the relevant signal coming from the sensor, which is buried in a broad-band noise background where we have little knowledge of the noise characteristics. The experimental results are satisfactory and show a significant improvement in the signal-to-noise ratio at the system output.

High-speed pulsed mixing in a short distance with high-frequency switching of pumping from three inlets

NASA Astrophysics Data System (ADS)

Sugano, K.; Nakata, A.; Tsuchiya, T.; Tabata, O.

2015-08-01

In this study, we propose a mixing method using alternate pulsed flows from three inlets with flow direction control. In conventional pulsed mixing, a residual flow near the sidewalls inhibits the rapid mixing of two solutions at high switching frequency. In this study, we addressed this issue in order to perform rapid mixing in a short distance with a low Reynolds number. We fabricated a microfluidic mixing device consisting of a cross-shaped mixing channel with three inlet microchannels and three valveless micropumps. In conventional T-shaped or Y-shaped mixing channels, a residual flow is observed because of the incomplete switching of solutions. The three inlet configuration enabled us to split the residual flow at a switching frequency of pumping of up to 200 Hz, thus resulting in rapid mixing. Furthermore, by controlling the flow direction at the confluent area using the reverse flow of the micropump, the mixing speed was dramatically increased because of the complete switching of the two solutions. As a result, we achieved the mixing time of 3.6 ms and the mixing length of 20.7 µm, which were necessary to achieve a 90% mixing ratio at a high micropump switching frequency of 400 Hz and reverse flow ratio of 1/4.

Inactivation of ferric uptake regulator (Fur) attenuates Helicobacter pylori J99 motility by disturbing the flagellar motor switch and autoinducer-2 production.

PubMed

Lee, Ai-Yun; Kao, Cheng-Yen; Wang, Yao-Kuan; Lin, Ssu-Yuan; Lai, Tze-Ying; Sheu, Bor-Shyang; Lo, Chien-Jung; Wu, Jiunn-Jong

2017-08-01

Flagellar motility of Helicobacter pylori has been shown to be important for the bacteria to establish initial colonization. The ferric uptake regulator (Fur) is a global regulator that has been identified in H. pylori which is involved in the processes of iron uptake and establishing colonization. However, the role of Fur in H. pylori motility is still unclear. Motility of the wild-type, fur mutant, and fur revertant J99 were determined by a soft-agar motility assay and direct video observation. The bacterial shape and flagellar structure were evaluated by transmission electron microscopy. Single bacterial motility and flagellar switching were observed by phase-contrast microscopy. Autoinducer-2 (AI-2) production in bacterial culture supernatant was analyzed by a bioluminescence assay. The fur mutant showed impaired motility in the soft-agar assay compared with the wild-type J99 and fur revertant. The numbers and lengths of flagellar filaments on the fur mutant cells were similar to those of the wild-type and revertant cells. Phenotypic characterization showed similar swimming speed but reduction in switching rate in the fur mutant. The AI-2 production of the fur mutant was dramatically reduced compared with wild-type J99 in log-phase culture medium. These results indicate that Fur positively modulates H. pylori J99 motility through interfering with bacterial flagellar switching. © 2017 John Wiley & Sons Ltd.

Organic Power Electronics: Transistor Operation in the kA/cm2 Regime

PubMed Central

Klinger, Markus P.; Fischer, Axel; Kaschura, Felix; Widmer, Johannes; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Leo, Karl

2017-01-01

In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed. PMID:28303924

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

DTIC Science & Technology

2015-11-19

between the binary oxides and the  perovskite  nickelates and the nature of  d‐orbital filling leads to profound complexity in the electronic nature of the...Al2O3,  (111) MgO,  (111) MgAl2O4,  and  (111)  perovskite  oxide  substrates  [20,21]. The key to achieving epitaxy of (100) rutile‐type compounds is...due to the small path length difference between the p and the s polarized  light  within  the  thin  films.  Thus,  our measurements  are  not  sensitive

Electronic differential for tramcar bogies: system development and performance evaluation by means of numerical simulation

NASA Astrophysics Data System (ADS)

Barbera, Andrea N.; Bucca, Giuseppe; Corradi, Roberto; Facchinetti, Alan; Mapelli, Ferdinando

2014-05-01

The dynamic behaviour of railway vehicles depends on the wheelset configuration, i.e. solid axle wheelset or independently rotating wheels (IRWs). The self-centring behaviour, peculiar of the solid axle wheelset, makes this kind of wheelset very suitable for tangent track running at low speed: the absence of the self-centring mechanism in the IRWs may lead to anomalous wheel/rail wear, reduced vehicle safety and passengers' discomfort. On the contrary, during negotiation of the sharp curves typical of urban tramways, solid axle wheelsets produce lateral contact forces higher than those of IRWs. This paper illustrates an electronic differential system to be applied to tramcar bogies equipped with wheel-hub motors which allows switching from solid axle in tangent track to IRWs in sharp curve (and vice versa). An electro-mechanical vehicle model is adopted for the design of the control system and for the evaluation of the vehicle dynamic performances.

Organic Power Electronics: Transistor Operation in the kA/cm2 Regime.

PubMed

Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Widmer, Johannes; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Leo, Karl

2017-03-17

In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm -2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm 2  V -1  s -1 , this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.

An Approach to Average Modeling and Simulation of Switch-Mode Systems

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of average modeling of PWM switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The paper discusses the derivation of PSPICE/ORCAD-compatible average models of the switch-mode power stages, their software implementation, and…

Is there a general task switching ability?

PubMed

Yehene, Einat; Meiran, Nachshon

2007-11-01

Participants were tested on two analogous task switching paradigms involving Shape/Size tasks and Vertical/Horizontal tasks, respectively, and three measures of psychometric intelligence, tapping fluid, crystallized and perceptual speed abilities. The paradigms produced similar patterns of group mean reaction times (RTs) and the vast majority of the participants showed switching cost (switch RT minus repeat RT), mixing cost (repeat RT minus single-task RT) and congruency effects. The shared intra-individual variance across paradigms and with psychometric intelligence served as criteria for general ability. Structural equations modeling indicated that switching cost with ample preparation ("residual cost") and mixing cost met these criteria. However, switching cost with little preparation and congruency effects were predominantly paradigm specific.

128×128 three-dimensional MEMS optical switch module with simultaneous optical path connection for optical cross-connect systems.

PubMed

Mizukami, Masato; Yamaguchi, Joji; Nemoto, Naru; Kawajiri, Yuko; Hirata, Hirooki; Uchiyama, Shingo; Makihara, Mitsuhiro; Sakata, Tomomi; Shimoyama, Nobuhiro; Oda, Kazuhiro

2011-07-20

A 128×128 three-dimensional MEMS optical switch module and a switching-control algorithm for high-speed connection and optical power stabilization are described. A prototype switch module enables the simultaneous switching of all optical paths. The insertion loss is less than 4.6 dB and is 2.3 dB on average. The switching time is less than 38 ms and is 8 ms on average. We confirmed that the maximum optical power can be obtained and optical power stabilization control is possible. The results confirm that the module is suitable for practical use in optical cross-connect systems. © 2011 Optical Society of America

Binary-selectable detector holdoff circuit

NASA Technical Reports Server (NTRS)

Kadrmas, K. A.

1974-01-01

High-speed switching circuit protects detectors from sudden, extremely-intense backscattered radiation that results from short-range atmospheric dust layers, or low-level clouds, entering laser/radar field of view. Function of circuit is to provide computer-controlled switching of photodiode detector, preamplifier power-supply voltages, in approximately 10 nanoseconds.

Simulation of load traffic and steeped speed control of conveyor

NASA Astrophysics Data System (ADS)

Reutov, A. A.

2017-10-01

The article examines the possibilities of the step control simulation of conveyor speed within Mathcad, Simulink, Stateflow software. To check the efficiency of the control algorithms and to more accurately determine the characteristics of the control system, it is necessary to simulate the process of speed control with real values of traffic for a work shift or for a day. For evaluating the belt workload and absence of spillage it is necessary to use empirical values of load flow in a shorter period of time. The analytical formulas for optimal speed step values were received using empirical values of load. The simulation checks acceptability of an algorithm, determines optimal parameters of regulation corresponding to load flow characteristics. The average speed and the number of speed switching during simulation are admitted as criteria of regulation efficiency. The simulation example within Mathcad software is implemented. The average conveyor speed decreases essentially by two-step and three-step control. A further increase in the number of regulatory steps decreases average speed insignificantly but considerably increases the intensity of the speed switching. Incremental algorithm of speed regulation uses different number of stages for growing and reducing load traffic. This algorithm allows smooth control of the conveyor speed changes with monotonic variation of the load flow. The load flow oscillation leads to an unjustified increase or decrease of speed. Work results can be applied at the design of belt conveyors with adjustable drives.

Grammatical Constraints on Language Switching: Language Control is not Just Executive Control

PubMed Central

Gollan, Tamar H.; Goldrick, Matthew

2016-01-01

The current study investigated the roles of grammaticality and executive control on bilingual language selection by examining production speed and failures of language control, or intrusion errors (e.g., saying el instead of the), in young and aging bilinguals. Production of mixed-language connected speech was elicited by asking Spanish-English bilinguals to read aloud paragraphs that had mostly grammatical (conforming to naturally occurring constraints) or mostly ungrammatical (haphazard mixing) language switches, and low or high switching rate. Mixed-language speech was slower and less accurate when switch-rate was high, but especially (for speed) or only (for intrusion errors) if switches were also ungrammatical. Executive function ability (measured with a variety of tasks in young bilinguals in Experiment 1, and aging bilinguals in Experiment 2), slowed production and increased intrusion rate in a generalized fashion, but with little or no interaction with grammaticality. Aging effects appeared to reflect reduced monitoring ability (evidenced by a lower rate of self-corrected intrusions). These results demonstrate robust effects of grammatical encoding on language selection, and imply that executive control influences bilingual language production only after sentence planning and lexical selection. PMID:27667899

Power-Quality Improvement in PFC Bridgeless SEPIC-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2013-06-01

This article presents a design of a power factor correction (PFC)-based brushless DC (BLDC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the voltage source inverter (VSI) feeding BLDC motor using a single voltage sensor. A front-end bridgeless single-ended primary inductance converter (SEPIC) is used for DC link voltage control and PFC operation. A bridgeless SEPIC is designed to operate in discontinuous inductor current mode (DICM) thus utilizing a simple control scheme of voltage follower. An electronic commutation of BLDC motor is used for VSI to operate in a low-frequency operation for reduced switching losses in the VSI. Moreover, a bridgeless topology offers less conduction losses due to absence of diode bridge rectifier for further increasing the efficiency. The proposed BLDC motor drive is designed to operate over a wide range of speed control with an improved power-quality at the AC mains under the recommended international power-quality standards such as IEC 61000-3-2.

DMD-based LED-illumination super-resolution and optical sectioning microscopy.

PubMed

Dan, Dan; Lei, Ming; Yao, Baoli; Wang, Wen; Winterhalder, Martin; Zumbusch, Andreas; Qi, Yujiao; Xia, Liang; Yan, Shaohui; Yang, Yanlong; Gao, Peng; Ye, Tong; Zhao, Wei

2013-01-01

Super-resolution three-dimensional (3D) optical microscopy has incomparable advantages over other high-resolution microscopic technologies, such as electron microscopy and atomic force microscopy, in the study of biological molecules, pathways and events in live cells and tissues. We present a novel approach of structured illumination microscopy (SIM) by using a digital micromirror device (DMD) for fringe projection and a low-coherence LED light for illumination. The lateral resolution of 90 nm and the optical sectioning depth of 120 μm were achieved. The maximum acquisition speed for 3D imaging in the optical sectioning mode was 1.6×10(7) pixels/second, which was mainly limited by the sensitivity and speed of the CCD camera. In contrast to other SIM techniques, the DMD-based LED-illumination SIM is cost-effective, ease of multi-wavelength switchable and speckle-noise-free. The 2D super-resolution and 3D optical sectioning modalities can be easily switched and applied to either fluorescent or non-fluorescent specimens.

DMD-based LED-illumination Super-resolution and optical sectioning microscopy

PubMed Central

Dan, Dan; Lei, Ming; Yao, Baoli; Wang, Wen; Winterhalder, Martin; Zumbusch, Andreas; Qi, Yujiao; Xia, Liang; Yan, Shaohui; Yang, Yanlong; Gao, Peng; Ye, Tong; Zhao, Wei

2013-01-01

Super-resolution three-dimensional (3D) optical microscopy has incomparable advantages over other high-resolution microscopic technologies, such as electron microscopy and atomic force microscopy, in the study of biological molecules, pathways and events in live cells and tissues. We present a novel approach of structured illumination microscopy (SIM) by using a digital micromirror device (DMD) for fringe projection and a low-coherence LED light for illumination. The lateral resolution of 90 nm and the optical sectioning depth of 120 μm were achieved. The maximum acquisition speed for 3D imaging in the optical sectioning mode was 1.6×107 pixels/second, which was mainly limited by the sensitivity and speed of the CCD camera. In contrast to other SIM techniques, the DMD-based LED-illumination SIM is cost-effective, ease of multi-wavelength switchable and speckle-noise-free. The 2D super-resolution and 3D optical sectioning modalities can be easily switched and applied to either fluorescent or non-fluorescent specimens. PMID:23346373

Sub-nanosecond signal propagation in anisotropy-engineered nanomagnetic logic chains

DOE PAGES

Gu, Zheng; Nowakowski, Mark E.; Carlton, David B.; ...

2015-03-16

Energy efficient nanomagnetic logic (NML) computing architectures propagate binary information by relying on dipolar field coupling to reorient closely spaced nanoscale magnets. In the past, signal propagation in nanomagnet chains were characterized by static magnetic imaging experiments; however, the mechanisms that determine the final state and their reproducibility over millions of cycles in high-speed operation have yet to be experimentally investigated. Here we present a study of NML operation in a high-speed regime. We perform direct imaging of digital signal propagation in permalloy nanomagnet chains with varying degrees of shape-engineered biaxial anisotropy using full-field magnetic X-ray transmission microscopy and time-resolvedmore » photoemission electron microscopy after applying nanosecond magnetic field pulses. Moreover, an intrinsic switching time of 100 ps per magnet is observed. In conclusion these experiments, and accompanying macrospin and micromagnetic simulations, reveal the underlying physics of NML architectures repetitively operated on nanosecond timescales and identify relevant engineering parameters to optimize performance and reliability.« less

Design and experimental study of a novel giant magnetostrictive actuator

NASA Astrophysics Data System (ADS)

Xue, Guangming; Zhang, Peilin; He, Zhongbo; Li, Dongwei; Huang, Yingjie; Xie, Wenqiang

2016-12-01

Giant magnetostrictive actuator has been widely used in precise driving occasions for its excellent performance. However, in driving a switching valve, especially the ball-valve in an electronic controlled injector, the actuator can't exhibit its good performance for limits in output displacement and responding speed. A novel giant magnetostrictive actuator, which can reach its maximum displacement for being exerted with no bias magnetic field, is designed in this paper. Simultaneously, elongating of the giant magetostrictive material is converted to shortening of the actuator's axial dimension with the help of an output rod in "T" type. Furthermore, to save responding time, the driving voltage with high opening voltage while low holding voltage is designed. Responding time and output displacement are studied experimentally with the help of a measuring system. From measured results, designed driving voltage can improve the responding speed of actuator displacement quite effectively. And, giant magnetostrictive actuator can output various steady-state displacements to reach more driving effects.

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

NASA Astrophysics Data System (ADS)

Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

2018-04-01

Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

Optical frequency switching scheme for a high-speed broadband THz measurement system based on the photomixing technique.

PubMed

Song, Hajun; Hwang, Sejin; Song, Jong-In

2017-05-15

This study presents an optical frequency switching scheme for a high-speed broadband terahertz (THz) measurement system based on the photomixing technique. The proposed system can achieve high-speed broadband THz measurements using narrow optical frequency scanning of a tunable laser source combined with a wavelength-switchable laser source. In addition, this scheme can provide a larger output power of an individual THz signal compared with that of a multi-mode THz signal generated by multiple CW laser sources. A swept-source THz tomography system implemented with a two-channel wavelength-switchable laser source achieves a reduced time for acquisition of a point spread function and a higher depth resolution in the same amount of measurement time compared with a system with a single optical source.

Quantum coherent π-electron rotations in a non-planar chiral molecule induced by using a linearly polarized UV laser pulse

NASA Astrophysics Data System (ADS)

Mineo, Hirobumi; Fujimura, Yuichi

2015-06-01

We propose an ultrafast quantum switching method of π-electron rotations, which are switched among four rotational patterns in a nonplanar chiral aromatic molecule (P)-2,2’- biphenol and perform the sequential switching among four rotational patterns which are performed by the overlapped pump-dump laser pulses. Coherent π-electron dynamics are generated by applying the linearly polarized UV pulse laser to create a pair of coherent quasidegenerated excited states. We also plot the time-dependent π-electron ring current, and discussed ring current transfer between two aromatic rings.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

NASA Astrophysics Data System (ADS)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

CMOS output buffer wave shaper

NASA Technical Reports Server (NTRS)

Albertson, L.; Whitaker, S.; Merrell, R.

1990-01-01

As the switching speeds and densities of Digital CMOS integrated circuits continue to increase, output switching noise becomes more of a problem. A design technique which aids in the reduction of switching noise is reported. The output driver stage is analyzed through the use of an equivalent RLC circuit. The results of the analysis are used in the design of an output driver stage. A test circuit based on these techniques is being submitted to MOSIS for fabrication.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

Alpha Control - A new Concept in SPM Control

NASA Astrophysics Data System (ADS)

Spizig, P.; Sanchen, D.; Volswinkler, G.; Ibach, W.; Koenen, J.

2006-03-01

Controlling modern Scanning Probe Microscopes demands highly sophisticated electronics. While flexibility and powerful computing power is of great importance in facilitating the variety of measurement modes, extremely low noise is also a necessity. Accordingly, modern SPM Controller designs are based on digital electronics to overcome the drawbacks of analog designs. While todays SPM controllers are based on DSPs or Microprocessors and often still incorporate analog parts, we are now introducing a completely new approach: Using a Field Programmable Gate Array (FPGA) to implement the digital control tasks allows unrivalled data processing speed by computing all tasks in parallel within a single chip. Time consuming task switching between data acquisition, digital filtering, scanning and the computing of feedback signals can be completely avoided. Together with a star topology to avoid any bus limitations in accessing the variety of ADCs and DACs, this design guarantees for the first time an entirely deterministic timing capability in the nanosecond regime for all tasks. This becomes especially useful for any external experiments which must be synchronized with the scan or for high speed scans that require not only closed loop control of the scanner, but also dynamic correction of the scan movement. Delicate samples additionally benefit from extremely high sample rates, allowing highly resolved signals and low noise levels.

Grating-based real-time smart optics for biomedicine and communications

NASA Astrophysics Data System (ADS)

Yaqoob, Zahid

Novel photonic systems are proposed and experimentally validated using active as well as passive wavelength dispersive optical devices in unique fashions to solve important system level application problems in biomedicine and laser communications. Specifically for the first time are proposed, high dynamic range variable optical attenuators (VOAs) using bulk acousto-optics (AO). These AO-based architectures have excellent characteristics such as high laser damage threshold (e.g., 1 Watt CW laser power operations), large (e.g., >40 dB) dynamic range, and microsecond domain attenuation setting speed. The demonstrated architectures show potentials for compact, low static insertion loss, and low power VOA designs for wavelength division multiplexed (WDM) fiber-optic communication networks and high speed photonic signal processing for optical and radio frequency (RF) radar and electronic warfare (EW). Acoustic diffraction of light in isotropic media has been manipulated to design and demonstrate on a proof-of-principle basis, the first bulk AO-based optical coherence tomography (OCT) system for high-resolution sub-surface tissue diagnostics. As opposed to the current OCT systems that use mechanical means to generate optical delays, both free-space as well as fiber-optic AO-based OCT systems utilize unique electronically-controlled acousto-optically switched no-moving parts optical delay lines and therefore promise microsecond speed OCT data acquisition rates. The proposed OCT systems also feature high (e.g., >100 MHz) intermediate frequency for low 1/f noise heterodyne detection. For the first time, two agile laser beam steering schemes that are members of a new beam steering technology known as Multiplexed-Optical Scanner Technology (MOST) are theoretically investigated and experimentally demonstrated. The new scanner technologies are based on wavelength and space manipulations and possess remarkable features such as a no-moving parts fast (e.g., microseconds domain or less) beam switching speed option, large (e.g., several centimeters) scanner apertures for high-resolution scans, and large (e.g., >10°) angular scans in more than one dimensions. These incredible features make these scanners excellent candidates for high-end applications. Specifically discussed and experimentally analyzed for the first time are novel MOST-based systems for agile free-space lasercom links, internal and external cavity scanning biomedical probes, and high-speed optical data handling such as barcode scanners. In addition, a novel low sidelobe wavelength selection filter based on a single bulk crystal acousto-optic tunable filter device is theoretically analyzed and experimentally demonstrated showing its versatility as a scanner control fiber-optic component for interfacing with the proposed wavelength based optical scanners. In conclusion, this thesis has shown how powerful photonic systems can be realized via novel architectures using active and passive wavelength sensitive optics leading to advanced solutions for the biomedical and laser communications research communities.

Electronically-Scanned Pressure Sensors

NASA Technical Reports Server (NTRS)

Coe, C. F.; Parra, G. T.; Kauffman, R. C.

1984-01-01

Sensors not pneumatically switched. Electronic pressure-transducer scanning system constructed in modular form. Pressure transducer modules and analog to digital converter module small enough to fit within cavities of average-sized wind-tunnel models. All switching done electronically. Temperature controlled environment maintained within sensor modules so accuracy maintained while ambient temperature varies.

Electronic Computer and Switching Systems Specialist (AFSC 30554).

ERIC Educational Resources Information Center

Air Univ., Gunter AFS, Ala. Extension Course Inst.

This course is intended to train Air Force personnel to become electronic computer and switching systems specialists. One part of the course consists of a three-volume career development course. Topics are maintenance orientation (15 hours), electronic principles and digital techniques (87 hours), and systems maintenance (51 hours). Each volume…

An optical switch

DOEpatents

Christophorou, L.G.; Hunter, S.R.

1987-04-30

The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

Solid-state active switch matrix for high energy, moderate power battery systems

DOEpatents

Deal, Larry; Paris, Peter; Ye, Changqing

2016-06-07

A battery management system employs electronic switches and capacitors. No traditional cell-balancing resistors are used. The BMS electronically switches individual cells into and out of a module of cells in order to use the maximum amount of energy available in each cell and to completely charge and discharge each cell without overcharging or under-discharging.

47 CFR 32.5999 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

47 CFR 32.5999 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

47 CFR 32.5999 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

Thermal re-ignition processes of switching arcs with various gas-blast using voltage application highly controlled by powersemiconductors

NASA Astrophysics Data System (ADS)

Nakano, Tomoyuki; Tanaka, Yasunori; Murai, K.; Uesugi, Y.; Ishijima, T.; Tomita, K.; Suzuki, K.; Shinkai, T.

2018-05-01

This paper focuses on a fundamental experimental approach to thermal arc re-ignition processes in a variety of gas flows in a nozzle. Using power semiconductor switches in the experimental system, the arc current and the voltage applied to the arc were controlled with precise timing. With this system, residual arcs were created in decaying phase under free recovery conditions; arc re-ignition was then intentionally instigated by application of artificial voltage—i.e. quasi-transient recovery voltage—to study the arc behaviour in both decaying and re-ignition phases. In this study, SF6, CO2, N2, O2, air and Ar arcs were intentionally re-ignited by quasi-TRV application at 20 μs delay time from initiation of free recovery condition. Through these experiments, the electron density at the nozzle throat was measured using a laser Thomson scattering method together with high speed video camera observation during the re-ignition process. Temporal variations in the electron density from the arc decaying to re-ignition phases were successfully obtained for each gas-blast arc at the nozzle throat. In addition, initial dielectric recovery properties of SF6, CO2, air and Ar arcs were measured under the same conditions. These data will be useful in the fundamental elucidation of thermal arc re-ignition processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kandlakunta, P; Pham, R; Zhang, T

Purpose: To develop and characterize a high brightness multiple-pixel thermionic emission x-ray (MPTEX) source. Methods: Multiple-pixel x-ray sources allow for designs of novel x-ray imaging techniques, such as fixed gantry CT, digital tomosynthesis, tetrahedron beam computed tomography, etc. We are developing a high-brightness multiple-pixel thermionic emission x-ray (MPTEX) source based on oxide coated cathodes. Oxide cathode is chosen as the electron source due to its high emission current density and low operating temperature. A MPTEX prototype has been developed which may contain up to 41 micro-rectangular oxide cathodes in 4 mm pixel spacing. Electronics hardware was developed for source controlmore » and switching. The cathode emission current was evaluated and x-ray measurements were performed to estimate the focal spot size. Results: The oxide cathodes were able to produce ∼110 mA cathode current in pulse mode which corresponds to an emission current density of 0.55 A/cm{sup 2}. The maximum kVp of the MPTEX prototype currently is limited to 100 kV due to the rating of high voltage feedthrough. Preliminary x-ray measurements estimated the focal spot size as 1.5 × 1.3 mm{sup 2}. Conclusion: A MPTEX source was developed with thermionic oxide coated cathodes and preliminary source characterization was successfully performed. The MPTEX source is able to produce an array of high brightness x-ray beams with a fast switching speed.« less

High-speed electro-optic switch with -80 dB crosstalk

NASA Technical Reports Server (NTRS)

Pan, J. J.; Su, W. H.; Xu, J. Y.; Grove, C. H.

1992-01-01

Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.

Electro-plasmonic 2 × 2 channel-routing switch arranged on a thin-Si-doped metal/insulator/semiconductor/metal structure.

PubMed

Moazzam, Mostafa Keshavarz; Kaatuzian, Hassan

2016-01-20

Plasmonics as a new field of chip-scale technology is the interesting substrate of this study to propose and numerically investigate a metal/insulator/semiconductor/metal (MISM)-structure 2×2 plasmonic routing switch. As a planar subwavelength arrangement, the presented design has two npn-doped side-coupled dual waveguides whose duty is to route the propagating surface plasmon polaritons through the device. Relying on the MISM structure, which has a MOS-like thin-film arrangement of typically 45 nm doped silicon covered by a layer of 8 nm thick HfO(2) gate insulator, the routing configuration is electrically addressed based on the carrier-induced plasma dispersion effects as an external electro-plasmonic switching control. Finite-element-method-conducted electromagnetic simulations are employed to evaluate the switch optical response at telecom wavelength of λ=1550  nm, due to which the balanced operation measure of extinction ratios larger than 10 dB and insertion losses of around -1.8  dB are obtained for both channels of CROSS and STRAIGHT. Compared with other photonic and plasmonic switching counterparts, this configuration, besides its potential for CMOS compatibility, can be utilized as a high-speed compact building block to sustain higher-speed, more miniaturized, and less consuming electro-optic routing/switching protocols toward complicated optical integrated circuits and systems.

Power Electronic Transformer based Three-Phase PWM AC Drives

NASA Astrophysics Data System (ADS)

Basu, Kaushik

A Transformer is used to provide galvanic isolation and to connect systems at different voltage levels. It is one of the largest and most expensive component in most of the high voltage and high power systems. Its size is inversely proportional to the operating frequency. The central idea behind a power electronic transformer (PET) also known as solid state transformer is to reduce the size of the transformer by increasing the frequency. Power electronic converters are used to change the frequency of operation. Steady reduction in the cost of the semiconductor switches and the advent of advanced magnetic materials with very low loss density and high saturation flux density implies economic viability and feasibility of a design with high power density. Application of PET is in generation of power from renewable energy sources, especially wind and solar. Other important application include grid tied inverters, UPS e.t.c. In this thesis non-resonant, single stage, bi-directional PET is considered. The main objective of this converter is to generate adjustable speed and magnitude pulse width modulated (PWM) ac waveforms from an ac or dc grid with a high frequency ac link. The windings of a high frequency transformer contains leakage inductance. Any switching transition of the power electronic converter connecting the inductive load and the transformer requires commutation of leakage energy. Commutation by passive means results in power loss, decrease in the frequency of operation, distortion in the output voltage waveform, reduction in reliability and power density. In this work a source based partially loss-less commutation of leakage energy has been proposed. This technique also results in partial soft-switching. A series of converters with novel PWM strategies have been proposed to minimize the frequency of leakage inductance commutation. These PETs achieve most of the important features of modern PWM ac drives including 1) Input power factor correction, 2) Common-mode voltage suppression at the load end, 3) High quality output voltage waveform (comparable to conventional space vector PWM modulated two level inverter) and 4) Minimization of output voltage loss, common-mode voltage switching and distortion of the load current waveform due to leakage inductance commutation. All of the proposed topologies along with the proposed control schemes have been analyzed and simulated in MATLABSimulink. A hardware prototype has been fabricated and tested. The simulation and experimental results verify the operation and advantages of the proposed topologies and their control.

LED lamp power management system and method

DOEpatents

Gaines, James; Clauberg, Bernd; Van Erp, Josephus A. M.

2013-03-19

An LED lamp power management system and method including an LED lamp having an LED controller 58; a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 reduces power loss in one of the channel switch 62 and the shunt switch 68 when LED lamp electronics power loss (P.sub.loss) exceeds an LED lamp electronics power loss limit (P.sub.lim); and each of the channel switches 62 receives a channel switch control signal 63 from the LED controller 58 and each of the shunt switches 68 receives a shunt switch control signal 69 from the LED controller 58.

Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-09-15

For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s.

Correlation and squeezing for optical transistor and intensity router applications in diamond NV center.

PubMed

Ahmed, Noor; Khan, Ghulam Abbas; Wang, Ruimin; Hou, Jingru; Gong, Rui; Yang, Lingmeng; Zhang, Yanpeng

2017-05-01

We study an optical transistor (switch and amplifier) and router by spontaneous parametric four-wave mixing and fluorescence in diamond nitrogen-vacancy (NV) center. The routing results from three peaks of fluorescence signal in the time domain, while the switching and amplification are realized by correlation and squeezing. The intensity switching speed is about 17 ns. The optical transistor and router are controlled by the power of incident beams. Our experimental results provide that the advance technique of peak division and channel equalization ratio of about 90% are applicable to all optical switching and routing.

Time- and frequency-resolved measurements of frequency modulation and switching of a tunable semiconductor laser

NASA Astrophysics Data System (ADS)

Kuznetsov, M.; Stone, J.; Stulz, L. W.

1991-11-01

We report measurements of intensity as a function of both time and frequency for frequency modulation and switching of a tunable semiconductor laser. Because of the uncertainty principle limitations, the measured time-frequency signal can have a complex structure and does not show the simple-minded picture of a laser spectrum whose center frequency varies in time. The observations are explained by a theory of the time-dependent spectral measurements, well known in the field of speech analysis. We discuss implications for channel switching speed and channel interference in switched, frequency-multiplexed optical networks.

A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

PubMed

Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

2016-01-21

We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

Video signal processing system uses gated current mode switches to perform high speed multiplication and digital-to-analog conversion

NASA Technical Reports Server (NTRS)

Gilliland, M. G.; Rougelot, R. S.; Schumaker, R. A.

1966-01-01

Video signal processor uses special-purpose integrated circuits with nonsaturating current mode switching to accept texture and color information from a digital computer in a visual spaceflight simulator and to combine these, for display on color CRT with analog information concerning fading.

Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices.

PubMed

Yoo, Jongmyung; Song, Jeonghwan; Hwang, Hyunsang

2018-06-18

In this study, we investigate the effect of cation amount in electrolyte on Ag/TiO2 based threshold switching devices based on field-induced nucleation theory. For this purpose, normal Ag/TiO2, annealed Ag/TiO2, and Ag-Te/TiO2 based TS devices are prepared, which have different cation amounts in their electrolytes during the switching process. First, we find that all of the prepared TS devices follow the field-induced nucleation theory with different nucleation barrier energy (W0) by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the amount of cations in the electrolyte during the switching process is the control parameter that affects the W0 values, which are found to be inversely proportional to the turn-off speed of the TS devices. This implies that the turn-off speed of the TS devices can be modulated by controlling the amount of cations in the matrix. © 2018 IOP Publishing Ltd.

Categorization difficulty modulates the mediated route for response selection in task switching.

PubMed

Schneider, Darryl W

2017-12-22

Conflict during response selection in task switching is indicated by the response congruency effect: worse performance for incongruent targets (requiring different responses across tasks) than for congruent targets (requiring the same response). The effect can be explained by dual-task processing in a mediated route for response selection, whereby targets are categorized with respect to both tasks. In the present study, the author tested predictions for the modulation of response congruency effects by categorization difficulty derived from a relative-speed-of-processing hypothesis. Categorization difficulty was manipulated for the relevant and irrelevant task dimensions in a novel spatial task-switching paradigm that involved judging the locations of target dots in a grid, without repetition of dot configurations. Response congruency effects were observed and they varied systematically with categorization difficulty (e.g., being larger when irrelevant categorization was easy than when it was hard). These results are consistent with the relative-speed-of-processing hypothesis and suggest that task-switching models that implement variations of the mediated route for response selection need to address the time course of categorization.

Inhibition and Updating, but Not Switching, Predict Developmental Dyslexia and Individual Variation in Reading Ability

PubMed Central

Doyle, Caoilainn; Smeaton, Alan F.; Roche, Richard A. P.; Boran, Lorraine

2018-01-01

To elucidate the core executive function profile (strengths and weaknesses in inhibition, updating, and switching) associated with dyslexia, this study explored executive function in 27 children with dyslexia and 29 age matched controls using sensitive z-mean measures of each ability and controlled for individual differences in processing speed. This study found that developmental dyslexia is associated with inhibition and updating, but not switching impairments, at the error z-mean composite level, whilst controlling for processing speed. Inhibition and updating (but not switching) error composites predicted both dyslexia likelihood and reading ability across the full range of variation from typical to atypical. The predictive relationships were such that those with poorer performance on inhibition and updating measures were significantly more likely to have a diagnosis of developmental dyslexia and also demonstrate poorer reading ability. These findings suggest that inhibition and updating abilities are associated with developmental dyslexia and predict reading ability. Future studies should explore executive function training as an intervention for children with dyslexia as core executive functions appear to be modifiable with training and may transfer to improved reading ability. PMID:29892245

Single-Stage Step up/down Driver for Permanent-Magnet Synchronous Machines

NASA Astrophysics Data System (ADS)

Chen, T. R.; Juan, Y. L.; Huang, C. Y.; Kuo, C. T.

2017-11-01

The two-stage circuit composed of a step up/down dc converter and a three-phase voltage source inverter is usually adopted as the electric vehicle’s motor driver. The conventional topology is more complicated. Additional power loss resulted from twice power conversion would also cause lower efficiency. A single-stage step up/down Permanent-Magnet Synchronous Motor driver for Brushless DC (BLDC) Motor is proposed in this study. The number components and circuit complexity are reduced. The low frequency six-step square-wave control is used to reduce the switching losses. In the proposed topology, only one active switch is gated with a high frequency PWM signal for adjusting the rotation speed. The rotor position signals are fed back to calculate the motor speed for digital close-loop control in a MCU. A 600W prototype circuit is constructed to drive a BLDC motor with rated speed 3000 rpm, and can control the speed of six sections.

Co-existence and switching between fast and Ω-slow wind solutions in rapidly rotating massive stars

NASA Astrophysics Data System (ADS)

Araya, I.; Curé, M.; ud-Doula, A.; Santillán, A.; Cidale, L.

2018-06-01

Most radiation-driven winds of massive stars can be modelled with m-CAK theory, resulting in the so-called fast solution. However, the most rapidly rotating stars among them, especially when the rotational speed is higher than {˜ } 75 per cent of the critical rotational speed, can adopt a different solution, the so-called Ω-slow solution, characterized by a dense and slow wind. Here, we study the transition region of the solutions where the fast solution changes to the Ω-slow solution. Using both time-steady and time-dependent numerical codes, we study this transition region for various equatorial models of B-type stars. In all cases, in a certain range of rotational speeds we find a region where the fast and the Ω-slow solution can co-exist. We find that the type of solution obtained in this co-existence region depends stongly on the initial conditions of our models. We also test the stability of the solutions within the co-existence region by performing base-density perturbations in the wind. We find that under certain conditions, the fast solution can switch to the Ω-slow solution, or vice versa. Such solution-switching may be a possible contributor of material injected into the circumstellar environment of Be stars, without requiring rotational speeds near critical values.

QKD-Based Secured Burst Integrity Design for Optical Burst Switched Networks

NASA Astrophysics Data System (ADS)

Balamurugan, A. M.; Sivasubramanian, A.; Parvathavarthini, B.

2016-03-01

The field of optical transmission has undergone numerous advancements and is still being researched mainly due to the fact that optical data transmission can be done at enormous speeds. It is quite evident that people prefer optical communication when it comes to large amount of data involving its transmission. The concept of switching in networks has matured enormously with several researches, architecture to implement and methods starting with Optical circuit switching to Optical Burst Switching. Optical burst switching is regarded as viable solution for switching bursts over networks but has several security vulnerabilities. However, this work exploited the security issues associated with Optical Burst Switching with respect to integrity of burst. This proposed Quantum Key based Secure Hash Algorithm (QKBSHA-512) with enhanced compression function design provides better avalanche effect over the conventional integrity algorithms.

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Bhasin, Kul B.; Romanofsky, Robert R.

1991-01-01

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Note: Four-port microfluidic flow-cell with instant sample switching

NASA Astrophysics Data System (ADS)

MacGriff, Christopher A.; Wang, Shaopeng; Tao, Nongjian

2013-10-01

A simple device for high-speed microfluidic delivery of liquid samples to a surface plasmon resonance sensor surface is presented. The delivery platform is comprised of a four-port microfluidic cell, two ports serve as inlets for buffer and sample solutions, respectively, and a high-speed selector valve to control the alternate opening and closing of the two outlet ports. The time scale of buffer/sample switching (or sample injection rise and fall time) is on the order of milliseconds, thereby minimizing the opportunity for sample plug dispersion. The high rates of mass transport to and from the central microfluidic sensing region allow for SPR-based kinetic analysis of binding events with dissociation rate constants (kd) up to 130 s-1. The required sample volume is only 1 μL, allowing for minimal sample consumption during high-speed kinetic binding measurement.

Optical modulation in silicon waveguides via charge state control of deep levels.

PubMed

Logan, D F; Jessop, P E; Knights, A P; Wojcik, G; Goebel, A

2009-10-12

The control of defect mediated optical absorption at a wavelength of 1550 nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A 'normally-off' depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

Fast superconducting magnetic field switch

DOEpatents

Goren, Yehuda; Mahale, Narayan K.

1996-01-01

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

Fast superconducting magnetic field switch

DOEpatents

Goren, Y.; Mahale, N.K.

1996-08-06

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

Valley switch in a graphene superlattice due to pseudo-Andreev reflection

NASA Astrophysics Data System (ADS)

Beenakker, C. W. J.; Gnezdilov, N. V.; Dresselhaus, E.; Ostroukh, V. P.; Herasymenko, Y.; Adagideli, I.; Tworzydło, J.

2018-06-01

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here, we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene-superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree of freedom playing the role of the valley index. The valley switch is ideal at a symmetry point of the superlattice potential, but remains close to 100% in a broad parameter range.

A parallel algorithm for switch-level timing simulation on a hypercube multiprocessor

NASA Technical Reports Server (NTRS)

Rao, Hariprasad Nannapaneni

1989-01-01

The parallel approach to speeding up simulation is studied, specifically the simulation of digital LSI MOS circuitry on the Intel iPSC/2 hypercube. The simulation algorithm is based on RSIM, an event driven switch-level simulator that incorporates a linear transistor model for simulating digital MOS circuits. Parallel processing techniques based on the concepts of Virtual Time and rollback are utilized so that portions of the circuit may be simulated on separate processors, in parallel for as large an increase in speed as possible. A partitioning algorithm is also developed in order to subdivide the circuit for parallel processing.

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

NASA Astrophysics Data System (ADS)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

NASA Technical Reports Server (NTRS)

Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

1986-01-01

After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

Organic Materials For Optical Switching

NASA Technical Reports Server (NTRS)

Cardelino, Beatriz H.

1993-01-01

Equations predict properties of candidate materials. Report presents results of theoretical study of nonlinear optical properties of organic materials. Such materials used in optical switching devices for computers and telecommunications, replacing electronic switches. Optical switching potentially offers extremely high information throughout in compact hardware.

Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

DTIC Science & Technology

2005-01-01

We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real - time systems , and present a...scheduling algorithm and apply it to two real-life task sets. Our results show that energy can be conserved in embedded real - time systems using energy...aware task scheduling. We also show that switching times have a significant effect on the energy consumed in hard real - time systems .

Hyperswitch Network For Hypercube Computer

NASA Technical Reports Server (NTRS)

Chow, Edward; Madan, Herbert; Peterson, John

1989-01-01

Data-driven dynamic switching enables high speed data transfer. Proposed hyperswitch network based on mixed static and dynamic topologies. Routing header modified in response to congestion or faults encountered as path established. Static topology meets requirement if nodes have switching elements that perform necessary routing header revisions dynamically. Hypercube topology now being implemented with switching element in each computer node aimed at designing very-richly-interconnected multicomputer system. Interconnection network connects great number of small computer nodes, using fixed hypercube topology, characterized by point-to-point links between nodes.

Crossbar Switches For Optical Data-Communication Networks

NASA Technical Reports Server (NTRS)

Monacos, Steve P.

1994-01-01

Optoelectronic and electro-optical crossbar switches called "permutation engines" (PE's) developed to route packets of data through fiber-optic communication networks. Basic network concept described in "High-Speed Optical Wide-Area Data-Communication Network" (NPO-18983). Nonblocking operation achieved by decentralized switching and control scheme. Each packet routed up or down in each column of this 5-input/5-output permutation engine. Routing algorithm ensures each packet arrives at its designated output port without blocking any other packet that does not contend for same output port.

Optical burst switching based satellite backbone network

NASA Astrophysics Data System (ADS)

Li, Tingting; Guo, Hongxiang; Wang, Cen; Wu, Jian

2018-02-01

We propose a novel time slot based optical burst switching (OBS) architecture for GEO/LEO based satellite backbone network. This architecture can provide high speed data transmission rate and high switching capacity . Furthermore, we design the control plane of this optical satellite backbone network. The software defined network (SDN) and network slice (NS) technologies are introduced. Under the properly designed control mechanism, this backbone network is flexible to support various services with diverse transmission requirements. Additionally, the LEO access and handoff management in this network is also discussed.

Self-monitoring of driving speed.

PubMed

Etzioni, Shelly; Erev, Ido; Ishaq, Robert; Elias, Wafa; Shiftan, Yoram

2017-09-01

In-vehicle data recorders (IVDR) have been found to facilitate safe driving and are highly valuable in accident analysis. Nevertheless, it is not easy to convince drivers to use them. Part of the difficulty is related to the "Big Brother" concern: installing IVDR impairs the drivers' privacy. The "Big Brother" concern can be mitigated by adding a turn-off switch to the IVDR. However, this addition comes at the expense of increasing speed variability between drivers, which is known to impair safety. The current experimental study examines the significance of this negative effect of a turn-off switch under two experimental settings representing different incentive structures: small and large fines for speeding. 199 students were asked to participate in a computerized speeding dilemma task, where they could control the speed of their "car" using "brake" and "speed" buttons, corresponding to automatic car foot pedals. The participants in two experimental conditions had IVDR installed in their "cars", and were told that they could turn it off at any time. Driving with active IVDR implied some probability of "fines" for speeding, and the two experimental groups differed with respect to the fine's magnitude, small or large. The results indicate that the option to use IVDR reduced speeding and speed variance. In addition, the results indicate that the reduction of speed variability was maximal in the small fine group. These results suggest that using IVDR with gentle fines and with a turn-off option maintains the positive effect of IVDR, addresses the "Big Brother" concern, and does not increase speed variance. Copyright © 2017 Elsevier Ltd. All rights reserved.

Integrating silicon photonic interconnects with CMOS: Fabrication to architecture

NASA Astrophysics Data System (ADS)

Sherwood, Nicholas Ramsey

While it was for many years the goal of microelectronics to speed up our daily tasks, the focus of today's technological developments is heavily centered on electronic media. Anyone can share their thoughts as text, sound, images or full videos, they can even make phone calls and download full movies on their computers, tablets and phones. The impact of this upsurge in bandwidth is directly on the infrastructure that carries this data. Long distance telecom lines were long ago replaced by optical fibers; now shorter and shorter distance connections have moved to optical transmission to keep up with the bandwidth requirements. Yet microprocessors that make up the switching nodes as well as the endpoints are not only stagnant in terms of processing speed, but also unlikely to continue Moore's transistor-doubling trend for much longer. Silicon photonics stands to make a technical leap in microprocessor technology by allowing monolithic communication speeds between arbitrarily spaced processing elements. The improvement in on-chip communication could reduce power and enable new improvements in this field. This work explores a few aspects involved in making such a leap practical in real life. The first part of the thesis develops process techniques and materials to make silicon photonics truly compatible with CMOS electronics, for two different stack layouts, including a glimpse into multilayerd photonics. Following this is an evaluation of the limitations of integrated devices and a post-fabrication/stabilizing solution using thermal index shifting. In the last parts we explore higher level device design and architecture on the SOI platform.

Minimum-Cost Aircraft Descent Trajectories with a Constrained Altitude Profile

NASA Technical Reports Server (NTRS)

Wu, Minghong G.; Sadovsky, Alexander V.

2015-01-01

An analytical formula for solving the speed profile that accrues minimum cost during an aircraft descent with a constrained altitude profile is derived. The optimal speed profile first reaches a certain speed, called the minimum-cost speed, as quickly as possible using an appropriate extreme value of thrust. The speed profile then stays on the minimum-cost speed as long as possible, before switching to an extreme value of thrust for the rest of the descent. The formula is applied to an actual arrival route and its sensitivity to winds and airlines' business objectives is analyzed.

Scalable Active Optical Access Network Using Variable High-Speed PLZT Optical Switch/Splitter

NASA Astrophysics Data System (ADS)

Ashizawa, Kunitaka; Sato, Takehiro; Tokuhashi, Kazumasa; Ishii, Daisuke; Okamoto, Satoru; Yamanaka, Naoaki; Oki, Eiji

This paper proposes a scalable active optical access network using high-speed Plumbum Lanthanum Zirconate Titanate (PLZT) optical switch/splitter. The Active Optical Network, called ActiON, using PLZT switching technology has been presented to increase the number of subscribers and the maximum transmission distance, compared to the Passive Optical Network (PON). ActiON supports the multicast slot allocation realized by running the PLZT switch elements in the splitter mode, which forces the switch to behave as an optical splitter. However, the previous ActiON creates a tradeoff between the network scalability and the power loss experienced by the optical signal to each user. It does not use the optical power efficiently because the optical power is simply divided into 0.5 to 0.5 without considering transmission distance from OLT to each ONU. The proposed network adopts PLZT switch elements in the variable splitter mode, which controls the split ratio of the optical power considering the transmission distance from OLT to each ONU, in addition to PLZT switch elements in existing two modes, the switching mode and the splitter mode. The proposed network introduces the flexible multicast slot allocation according to the transmission distance from OLT to each user and the number of required users using three modes, while keeping the advantages of ActiON, which are to support scalable and secure access services. Numerical results show that the proposed network dramatically reduces the required number of slots and supports high bandwidth efficiency services and extends the coverage of access network, compared to the previous ActiON, and the required computation time for selecting multicast users is less than 30msec, which is acceptable for on-demand broadcast services.

Electrochemical metallization memories--fundamentals, applications, prospects.

PubMed

Valov, Ilia; Waser, Rainer; Jameson, John R; Kozicki, Michael N

2011-06-24

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.

Electrochemical metallization memories—fundamentals, applications, prospects

NASA Astrophysics Data System (ADS)

Valov, Ilia; Waser, Rainer; Jameson, John R.; Kozicki, Michael N.

2011-06-01

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, RON to ROFF ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.

High-performance silicon photonic tri-state switch based on balanced nested Mach-Zehnder interferometer.

PubMed

Lu, Zeqin; Celo, Dritan; Mehrvar, Hamid; Bernier, Eric; Chrostowski, Lukas

2017-09-25

This work proposes a novel silicon photonic tri-state (cross/bar/blocking) switch, featuring high-speed switching, broadband operation, and crosstalk-free performance. The switch is designed based on a 2 × 2 balanced nested Mach-Zehnder interferometer structure with carrier injection phase tuning. As compared to silicon photonic dual-state (cross/bar) switches based on Mach-Zehnder interferometers with carrier injection phase tuning, the proposed switch not only has better performance in cross/bar switching but also provides an extra blocking state. The unique blocking state has a great advantage in applications of N × N switch fabrics, where idle switching elements in the fabrics can be configured to the blocking state for crosstalk suppression. According to our numerical experiments on a fully loaded 8 × 8 dilated Banyan switch fabric, the worst output crosstalk of the 8 × 8 switch can be dramatically suppressed by more than 50 dB, by assigning the blocking state to idle switching elements in the fabric. The results of this work can extend the functionality of silicon photonic switches and significantly improve the performance of on-chip N × N photonic switching technologies.

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

NASA Astrophysics Data System (ADS)

Jeffrey, Mike R.

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems.

PubMed

Jeffrey, Mike R

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeffrey, Mike R., E-mail: mike.jeffrey@bristol.ac.uk

2015-10-15

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We showmore » how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to “hidden” attractors inside the switching surface.« less

Development of Simulated Disturbing Source for Isolation Switch

NASA Astrophysics Data System (ADS)

Cheng, Lin; Liu, Xiang; Deng, Xiaoping; Pan, Zhezhe; Zhou, Hang; Zhu, Yong

2018-01-01

In order to simulate the substation in the actual scene of the harsh electromagnetic environment, and then research on electromagnetic compatibility testing of electronic instrument transformer, On the basis of the original isolation switch as a harassment source of the electronic instrument transformer electromagnetic compatibility test system, an isolated switch simulation source system was developed, to promote the standardization of the original test. In this paper, the circuit breaker is used to control the opening and closing of the gap arc to simulate the operating of isolating switch, and the isolation switch simulation harassment source system is designed accordingly. Comparison with the actual test results of the isolating switch, it is proved that the system can meet the test requirements, and the simulation harassment source system has good stability and high reliability.

Bio-recognition and detection using liquid crystals.

PubMed

Hussain, A; Pina, A S; Roque, A C A

2009-09-15

Liquid crystals (LCs) are used extensively by the electronics industry as display devices. Advances in the understanding of the liquid crystalline phase and the chemistry therein lead to the development of LC exhibiting faster switching speed with greater twist angle. This in turn lead to the emergence of liquid crystal displays, rendering dial-and-needle based displays (such as those used in various meters) and cathode ray tubes obsolete. In this article, we review the history of LC and their emergence as an invaluable material for display devices and the more recent discovery of their use as sensing elements in biosensors. This new application of LC as tools in the development of fast and simple biosensors is envisaged to gain more importance in the foreseeable future.

Safety Assessment of TACOM’s Crew Station/Turret Motion Base Simulator

DTIC Science & Technology

1992-04-01

mode. The power ON switch is interlocked with the system hydraulic pressure switch so that the electronics can not be turned off while the system...analog) "o Oil Temperature Transducer (analog) "o Facility Pressure Switch o Pressure Critical Switch "o Six Supply Solenoid Valves "O Three Accumulator...Relief Solenoid Valves o Return Pressure Switch o Return Valve Switch o Six Filter Clogged Switches (one per filter) The Facility Pressure switch detects

Fast all-optical switch

NASA Technical Reports Server (NTRS)

Shay, Thomas M. (Inventor); Poliakov, Evgeni Y. (Inventor); Hazzard, David A. (Inventor)

2001-01-01

An apparatus and method wherein polarization rotation in alkali vapors or other mediums is used for all-optical switching and digital logic and where the rate of operation is proportional to the amplitude of the pump field. High rates of speed are accomplished by Rabi flopping of the atomic states using a continuously operating monochromatic atomic beam as the pump.

49 CFR Appendix A to Part 236 - Civil Penalties 1

Code of Federal Regulations, 2010 CFR

2010-10-01

... protection; where required 1,000 2,000 236.13Spring switch; selection of signal control circuits through circuit controller 1,000 2,000 236.14Spring switch signal protection; requirements 1,000 2,000 236... speed through turnout greater than 45 m.p.h 2,500 5,000 (b) Track relay not in de-energized position or...

49 CFR Appendix A to Part 236 - Civil Penalties 1

Code of Federal Regulations, 2011 CFR

2011-10-01

... protection; where required 1,000 2,000 236.13Spring switch; selection of signal control circuits through circuit controller 1,000 2,000 236.14Spring switch signal protection; requirements 1,000 2,000 236... speed through turnout greater than 45 m.p.h 2,500 5,000 (b) Track relay not in de-energized position or...

Adult age differences in task switching.

PubMed

Kray, J; Lindenberger, U

2000-03-01

Age differences in 2 components of task-set switching speed were investigated in 118 adults aged 20 to 80 years using task-set homogeneous (e.g., AAAA ...) and task-set heterogeneous (e.g., AABBAABB ... ) blocks. General switch costs were defined as latency differences between heterogeneous and homogeneous blocks. whereas specific switch costs were defined as differences between switch and nonswitch trials within heterogeneous blocks. Both types of costs generalized over verbal, figural, and numeric stimulus materials; were more highly correlated to fluid than to crystallized abilities; and were not eliminated after 6 sessions of practice, indicating that they reflect basic and domain-general aspects of cognitive control. Most important, age-associated increments in costs were significantly greater for general than for specific switch costs, suggesting that the ability to efficiently maintain and coordinate 2 alternating task sets in working memory instead of 1 is more negatively affected by advancing age than the ability to execute the task switch itself.

EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

NASA Astrophysics Data System (ADS)

Weinelt, Martin; von Oppen, Felix

2012-10-01

In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on metal surfaces, focusing on electronic and vibrational spectroscopy in one case and scanning tunneling microscopy studies in the other. Original research articles describe results in many aspects of the field, including: Self-assembly, self-organization, and controlled growth of molecular layers on various substrates. Highly-ordered arrays provide model systems with extraordinary structural properties, allowing one to adjust interactions between molecules and between molecule and substrate, and can be robustly prepared from solution, an essential prerequisite for applications. Conformational or electronic switching of molecules adsorbed at metal and semiconductor surfaces. These studies highlight the elementary processes governing molecular switching at surfaces as well as the wide range of possible stimuli. Carbon-based substrates such as graphene or carbon nanotubes. These substrates are attractive due to their effective two-dimensionality which implies that switching of adsorbed molecules can effect a significant back-action on the substrate. Mechanisms of conformational switching. Several contributions study the role of electron-vibron coupling and heating in current-induced conformational switching. We hope that the collection of articles presented here will stimulate and encourage researchers in surface physics and interfacial chemistry to contribute to the still emerging field of molecular switches at surfaces. We wish to acknowledge the support and input from many colleagues in preparing this special section. A significant part of this work has been conducted in the framework of the Sonderforschungsbereich 658 Elementary Processes in Molecular Switches at Surfaces of the Deutsche Forschungsgemeinschaft, to which we are grateful for financial support. Molecular surfaces at switches contents Molecular switches at surfacesMartin Weinelt and Felix von Oppen Optically and thermally induced molecular switching processes at metal surfacesPetra Tegeder Effects of electron-vibration coupling in transport through single moleculesKatharina J Franke and Jose Ignacio Pascual Vibrational heating in single-molecule switches: an energy-dependent density-of-states approachT Brumme, R Gutierrez and G Cuniberti Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surfaceC Nacci, K Kanisawa and S Fölsch Tuning the interaction between carbon nanotubes and dipole switches: the influence of the change of the nanotube-spiropyran distanceP Bluemmel, A Setaro, C Maity, S Hecht and S Reich Carbon nanotubes as substrates for molecular spiropyran-based switchesE Malic, A Setaro, P Bluemmel, Carlos F Sanz-Navarro, Pablo Ordejón, S Reich and A Knorr Ultrafast dynamics of dithienylethenes differently linked to the surface of TiO2 nanoparticlesLars Dworak, Marc Zastrow, Gehad Zeyat, Karola Rück-Braun and Josef Wachtveitl Switching the electronic properties of Co-octaethylporphyrin molecules on oxygen-covered Ni films by NO adsorptionC F Hermanns, M Bernien, A Krüger, J Miguel and W Kuch STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)K Zenichowski, Ch Nacci, S Fölsch, J Dokić, T Klamroth and P Saalfrank A switch based on self-assembled thymineFatih Kalkan, Michael Mehlhorn and Karina Morgenstern The growth and electronic structure of azobenzene-based functional molecules on layered crystalsJ Iwicki, E Ludwig, J Buck, M Kalläne, F Köhler, R Herges, L Kipp and K Rossnagel Voltage-dependent conductance states of a single-molecule junctionY F Wang, N Néel, J Kröger, H Vázquez, M Brandbyge, B Wang and R Berndt Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulationJohannes Mielke, Sofia Selvanathan, Maike Peters, Jutta Schwarz, Stefan Hecht and Leonhard Grill Preparing and regulating a bi-stable molecular switch by atomic manipulationS Sakulsermsuk, R E Palmer and P A Sloan Mixed self-assembled monolayers of azobenzene photoswitches with trifluoromethyl and cyano end groupsDaniel Brete, Daniel Przyrembel, Christian Eickhoff, Robert Carley, Wolfgang Freyer, Karsten Reuter, Cornelius Gahl and Martin Weinelt Reversible electron-induced cis-trans isomerization mediated by intermolecular interactionsCh Lotze, Y Luo, M Corso, K J Franke, R Haag and J I Pascual Transport properties of graphene functionalized with molecular switchesNiels Bode, Eros Mariani and Felix von Oppen

Silicon-Germanium Fast Packet Switch Developed for Communications Satellites

NASA Technical Reports Server (NTRS)

Quintana, Jorge A.

1999-01-01

Emerging multimedia applications and future satellite systems will require high-speed switching networks to accommodate high data-rate traffic among thousands of potential users. This will require advanced switching devices to enable communication between satellites. The NASA Lewis Research Center has been working closely with industry to develop a state-of-the-art fast packet switch (FPS) to fulfill this requirement. Recently, the Satellite Industry Task Force identified the need for high-capacity onboard processing switching components as one of the "grand challenges" for the satellite industry in the 21st century. In response to this challenge, future generations of onboard processing satellites will require low power and low mass components to enable transmission of services in the 100 gigabit (1011 bits) per second (Gbps) range.

On-Board Switching and Routing Advanced Technology Study

NASA Technical Reports Server (NTRS)

Yegenoglu, F.; Inukai, T.; Kaplan, T.; Redman, W.; Mitchell, C.

1998-01-01

Future satellite communications is expected to be fully integrated into National and Global Information Infrastructures (NII/GII). These infrastructures will carry multi gigabit-per-second data rates, with integral switching and routing of constituent data elements. The satellite portion of these infrastructures must, therefore, be more than pipes through the sky. The satellite portion will also be required to perform very high speed routing and switching of these data elements to enable efficient broad area coverage to many home and corporate users. The technology to achieve the on-board switching and routing must be selected and developed specifically for satellite application within the next few years. This report presents evaluation of potential technologies for on-board switching and routing applications.

Membrane Switches Check Seal Pressure

NASA Technical Reports Server (NTRS)

Hodgetts, P. J.; Stuckenberg, F. H.; Morrissey, E. T.

1984-01-01

Array of flexible membrane switches used to indicate closure of seal. Switch membrane responds to pressure exerted by rigid surface on compliant sealing medium and provides switch contacts monitored electronically. Membrane switches connected in series and placed under seal. When all switches are closed lamp or LED lights up, indicating requisite seal pressure has been realized at all switch positions. Principle used to ensure integrity of seals on refrigerator and oven doors, weatherstripping, hatches, spacecraft, airplanes, and submarines.

Optical Circuit Switched Protocol

NASA Technical Reports Server (NTRS)

Monacos, Steve P. (Inventor)

2000-01-01

The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

NASA Astrophysics Data System (ADS)

Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

2018-03-01

A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

Base drive circuit for a four-terminal power Darlington

DOEpatents

Lee, Fred C.; Carter, Roy A.

1983-01-01

A high power switching circuit which utilizes a four-terminal Darlington transistor block to improve switching speed, particularly in rapid turn-off. Two independent reverse drive currents are utilized during turn off in order to expel the minority carriers of the Darlington pair at their own charge sweep-out rate. The reverse drive current may be provided by a current transformer, the secondary of which is tapped to the base terminal of the power stage of the Darlington block. In one application, the switching circuit is used in each power switching element in a chopper-inverter drive of an electric vehicle propulsion system.

A Study of Quality of Service Communication for High-Speed Packet-Switching Computer Sub-Networks

NASA Technical Reports Server (NTRS)

Cui, Zhenqian

1999-01-01

In this thesis, we analyze various factors that affect quality of service (QoS) communication in high-speed, packet-switching sub-networks. We hypothesize that sub-network-wide bandwidth reservation and guaranteed CPU processing power at endpoint systems for handling data traffic are indispensable to achieving hard end-to-end quality of service. Different bandwidth reservation strategies, traffic characterization schemes, and scheduling algorithms affect the network resources and CPU usage as well as the extent that QoS can be achieved. In order to analyze those factors, we design and implement a communication layer. Our experimental analysis supports our research hypothesis. The Resource ReSerVation Protocol (RSVP) is designed to realize resource reservation. Our analysis of RSVP shows that using RSVP solely is insufficient to provide hard end-to-end quality of service in a high-speed sub-network. Analysis of the IEEE 802.lp protocol also supports the research hypothesis.

Intelligent control for PMSM based on online PSO considering parameters change

NASA Astrophysics Data System (ADS)

Song, Zhengqiang; Yang, Huiling

2018-03-01

A novel online particle swarm optimization method is proposed to design speed and current controllers of vector controlled interior permanent magnet synchronous motor drives considering stator resistance variation. In the proposed drive system, the space vector modulation technique is employed to generate the switching signals for a two-level voltage-source inverter. The nonlinearity of the inverter is also taken into account due to the dead-time, threshold and voltage drop of the switching devices in order to simulate the system in the practical condition. Speed and PI current controller gains are optimized with PSO online, and the fitness function is changed according to the system dynamic and steady states. The proposed optimization algorithm is compared with conventional PI control method in the condition of step speed change and stator resistance variation, showing that the proposed online optimization method has better robustness and dynamic characteristics compared with conventional PI controller design.

High speed magneto-resistive random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1992-01-01

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Control method for peak power delivery with limited DC-bus voltage

DOEpatents

Edwards, John; Xu, Longya; Bhargava, Brij B.

2006-09-05

A method for driving a neutral point-clamped multi-level voltage source inverter supplying a synchronous motor is provided. A DC current is received at a neutral point-clamped multi-level voltage source inverter. The inverter has first, second, and third output nodes. The inverter also has a plurality of switches. A desired speed of a synchronous motor connected to the inverter by the first second and third nodes is received by the inverter. The synchronous motor has a rotor and the speed of the motor is defined by the rotational rate of the rotor. A position of the rotor is sensed, current flowing to the motor out of at least two of the first, second, and third output nodes is sensed, and predetermined switches are automatically activated by the inverter responsive to the sensed rotor position, the sensed current, and the desired speed.

Software and hardware complex for research and management of the separation process

NASA Astrophysics Data System (ADS)

Borisov, A. P.

2018-01-01

The article is devoted to the development of a program for studying the operation of an asynchronous electric drive using vector-algorithmic switching of windings, as well as the development of a hardware-software complex for controlling parameters and controlling the speed of rotation of an asynchronous electric drive for investigating the operation of a cyclone. To study the operation of an asynchronous electric drive, a method was used in which the average value of flux linkage is found and a method for vector-algorithmic calculation of the power and electromagnetic moment of an asynchronous electric drive feeding from a single-phase network is developed, with vector-algorithmic commutation, and software for calculating parameters. The software part of the complex allows to regulate the speed of rotation of the motor by vector-algorithmic switching of transistors or, using pulse-width modulation (PWM), set any engine speed. Also sensors are connected to the hardware-software complex at the inlet and outlet of the cyclone. The developed cyclone with an inserted complex allows to receive high efficiency of product separation at various entrance speeds. At an inlet air speed of 18 m / s, the cyclone’s maximum efficiency is achieved. For this, it is necessary to provide the rotational speed of an asynchronous electric drive with a frequency of 45 Hz.

Novel electronic ferroelectricity in an organic charge-order insulator investigated with terahertz-pump optical-probe spectroscopy

PubMed Central

Yamakawa, H.; Miyamoto, T.; Morimoto, T.; Yada, H.; Kinoshita, Y.; Sotome, M.; Kida, N.; Yamamoto, K.; Iwano, K.; Matsumoto, Y.; Watanabe, S.; Shimoi, Y.; Suda, M.; Yamamoto, H. M.; Mori, H.; Okamoto, H.

2016-01-01

In electronic-type ferroelectrics, where dipole moments produced by the variations of electron configurations are aligned, the polarization is expected to be rapidly controlled by electric fields. Such a feature can be used for high-speed electric-switching and memory devices. Electronic-type ferroelectrics include charge degrees of freedom, so that they are sometimes conductive, complicating dielectric measurements. This makes difficult the exploration of electronic-type ferroelectrics and the understanding of their ferroelectric nature. Here, we show unambiguous evidence for electronic ferroelectricity in the charge-order (CO) phase of a prototypical ET-based molecular compound, α-(ET)2I3 (ET:bis(ethylenedithio)tetrathiafulvalene), using a terahertz pulse as an external electric field. Terahertz-pump second-harmonic-generation(SHG)-probe and optical-reflectivity-probe spectroscopy reveal that the ferroelectric polarization originates from intermolecular charge transfers and is inclined 27° from the horizontal CO stripe. These features are qualitatively reproduced by the density-functional-theory calculation. After sub-picosecond polarization modulation by terahertz fields, prominent oscillations appear in the reflectivity but not in the SHG-probe results, suggesting that the CO is coupled with molecular displacements, while the ferroelectricity is electronic in nature. The results presented here demonstrate that terahertz-pump optical-probe spectroscopy is a powerful tool not only for rapidly controlling polarizations, but also for clarifying the mechanisms of ferroelectricity. PMID:26864779

Novel electronic ferroelectricity in an organic charge-order insulator investigated with terahertz-pump optical-probe spectroscopy.

PubMed

Yamakawa, H; Miyamoto, T; Morimoto, T; Yada, H; Kinoshita, Y; Sotome, M; Kida, N; Yamamoto, K; Iwano, K; Matsumoto, Y; Watanabe, S; Shimoi, Y; Suda, M; Yamamoto, H M; Mori, H; Okamoto, H

2016-02-11

In electronic-type ferroelectrics, where dipole moments produced by the variations of electron configurations are aligned, the polarization is expected to be rapidly controlled by electric fields. Such a feature can be used for high-speed electric-switching and memory devices. Electronic-type ferroelectrics include charge degrees of freedom, so that they are sometimes conductive, complicating dielectric measurements. This makes difficult the exploration of electronic-type ferroelectrics and the understanding of their ferroelectric nature. Here, we show unambiguous evidence for electronic ferroelectricity in the charge-order (CO) phase of a prototypical ET-based molecular compound, α-(ET)2I3 (ET:bis(ethylenedithio)tetrathiafulvalene), using a terahertz pulse as an external electric field. Terahertz-pump second-harmonic-generation(SHG)-probe and optical-reflectivity-probe spectroscopy reveal that the ferroelectric polarization originates from intermolecular charge transfers and is inclined 27° from the horizontal CO stripe. These features are qualitatively reproduced by the density-functional-theory calculation. After sub-picosecond polarization modulation by terahertz fields, prominent oscillations appear in the reflectivity but not in the SHG-probe results, suggesting that the CO is coupled with molecular displacements, while the ferroelectricity is electronic in nature. The results presented here demonstrate that terahertz-pump optical-probe spectroscopy is a powerful tool not only for rapidly controlling polarizations, but also for clarifying the mechanisms of ferroelectricity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, K.; Chen, H.; Wu, W.

We present that in the upgrade of ATLAS experiment, the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, themore » GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system is used to interface the front end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. Finally, the system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.« less

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

NASA Astrophysics Data System (ADS)

Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

2017-06-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

Optimization on fixed low latency implementation of the GBT core in FPGA

DOE PAGES

Chen, K.; Chen, H.; Wu, W.; ...

2017-07-11

We present that in the upgrade of ATLAS experiment, the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, themore » GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system is used to interface the front end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. Finally, the system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.« less

Optimization on fixed low latency implementation of the GBT core in FPGA

NASA Astrophysics Data System (ADS)

Chen, K.; Chen, H.; Wu, W.; Xu, H.; Yao, L.

2017-07-01

In the upgrade of ATLAS experiment [1], the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link [2]. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, the GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA [3]. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system [4, 5] is used to interface the front-end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. The system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.

Microwave switching power divider. [antenna feeds

NASA Technical Reports Server (NTRS)

Stockton, R. J.; Johnson, R. W. (Inventor)

1981-01-01

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

PubMed

Pickett, Matthew D; Williams, R Stanley

2012-06-01

We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.

Compact, low-loss and low-power 8×8 broadband silicon optical switch.

PubMed

Chen, Long; Chen, Young-kai

2012-08-13

We demonstrated a 8×8 broadband optical switch on silicon for transverse-electrical polarization using a switch-and-selector architecture. The switch has a footprint of only 8 mm × 8 mm, minimum on-chip loss of about 4 dB, and a port-to-port insertion loss variation of only 0.8 dB near some spectral regions. The port-to-port isolation is above 30 dB over the entire 80-nm-wide spectral range or above 45 dB near the central 30 nm. We also demonstrated a switching power of less than 1.5 mW per element and a speed of 2 kHz, and estimated the upper bound of total power consumption to be less than 70 mW even without optimization of the default state of the individual switch elements.

Call for Papers: Photonics in Switching

NASA Astrophysics Data System (ADS)

Wosinska, Lena; Glick, Madeleine

2006-04-01

Call for Papers: Photonics in Switching

Guest Editors:

Lena Wosinska, Royal Institute of Technology (KTH) / ICT Sweden Madeleine Glick, Intel Research, Cambridge, UK

Scope of Submission

• WDM node architectures
• Novel device technologies enabling photonics in switching, such as optical switch fabrics, optical memory, and wavelength conversion
• Routing protocols
• WDM switching and routing
• Quality of service
• Performance measurement and evaluation
• Next-generation optical networks: architecture, signaling, and control
• Traffic measurement and field trials
• Optical burst and packet switching
• OBS/OPS node architectures
• Burst/Packet scheduling and routing algorithms
• Contention resolution/avoidance strategies
• Services and applications for OBS/OPS (e.g., grid networks, storage-area networks, etc.)
• Burst assembly and ingress traffic shaping
• Hybrid OBS/TDM or OBS/wavelength routing

Manuscript Submission

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Wong, Eric W.; Epp, Larry; Bronikowski, Michael J.; Hunt, BBrian D.

2006-01-01

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

Ultrafast Power Processor for Smart Grid Power Module Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

MAITRA, ARINDAM; LITWIN, RAY; lai, Jason

This project’s goal was to increase the switching speed and decrease the losses of the power semiconductor devices and power switch modules necessary to enable Smart Grid energy flow and control equipment such as the Ultra-Fast Power Processor. The primary focus of this project involves exploiting the new silicon-based Super-GTO (SGTO) technology and build on prototype modules already being developed. The prototype super gate-turn-off thyristor (SGTO) has been tested fully under continuously conducting and double-pulse hard-switching conditions for conduction and switching characteristics evaluation. The conduction voltage drop measurement results indicate that SGTO has excellent conduction characteristics despite inconsistency among somemore » prototype devices. Tests were conducted with two conditions: (1) fixed gate voltage and varying anode current condition, and (2) fixed anode current and varying gate voltage condition. The conduction voltage drop is relatively a constant under different gate voltage condition. In terms of voltage drop as a function of the load current, there is a fixed voltage drop about 0.5V under zero current condition, and then the voltage drop is linearly increased with the current. For a 5-kV voltage blocking device that may operate under 2.5-kV condition, the projected voltage drop is less than 2.5 V under 50-A condition, or 0.1%. If the device is adopted in a converter operating under soft-switching condition, then the converter can achieve an ultrahigh efficiency, typically above 99%. The two-pulse switching test results indicate that SGTO switching speed is very fast. The switching loss is relatively low as compared to that of the insulated-gate-bipolar-transistors (IGBTs). A special phenomenon needs to be noted is such a fast switching speed for the high-voltage switching tends to create an unexpected Cdv/dt current, which reduces the turn-on loss because the dv/dt is negative and increases the turn-off loss because the dv/dt is positive. As a result, the turn-on loss at low current is quite low, and the turn-off loss at low current is relatively high. The phenomenon was verified with junction capacitance measurement along with the dv/dt calculation. Under 2-kV test condition, the turn-on and turn-off losses at 25-A is about 3 and 9 mJ, respectively. As compared to a 4.5-kV, 60-A rated IGBT, which has turn-on and turn-off losses about 25 and 20 mJ under similar test condition, the SGTO shows significant switching loss reduction. The switching loss depends on the switching frequency, but under hard-switching condition, the SGTO is favored to the IGBT device. The only concern is during low current turn-on condition, there is a voltage bump that can translate to significant power loss and associated heat. The reason for such a current bump is not known from this study. It is necessary that the device manufacturer perform though test and provide the answer so the user can properly apply SGTO in pulse-width-modulated (PWM) converter and inverter applications.« less

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

PubMed

Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

2012-01-10

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic switches and control circuits: A compilation

NASA Technical Reports Server (NTRS)

1971-01-01

The innovations in this updated series of compilations dealing with electronic technology represents a carefully selected collection of items on electronic switches and control circuits. Most of the items are based on well-known circuit design concepts that have been simplified or refined to meet NASA's demanding requirement for reliability, simplicity, fail-safe characteristics, and the capability of withstanding environmental extremes.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

A new energy-efficient control approach for space telescope drive system

NASA Astrophysics Data System (ADS)

Zhou, Wangping; Wang, Yong

Drive control makes the telescope accurately track celestial bodies in spite of external and in-ternal disturbances, and is a key technique to the performance of telescopes. In this paper, we propose a nonlinear adaptive observer based on power reversible approach for high preci-sion position tracking, i.e., space telescopes. The nonlinear adaptive observer automatically estimates the disturbances in drive system, and the observed value is applied to compensate for the real disturbances. With greatly reduced disturbances, the control precision can be ev-idently improved. In conventional drive control, the brake device is often used to slow down the reaction wheel and may waste enormous energy. To avoid those disadvantages, an H-bridge is put forward for wheel speed regulation. Such H-bridge has four independent sections, and each section mainly consists of a power electronic switch and an anti-parallel diode. A pair of diagonal sections is switched on for speeding up the reaction wheel and the other pair act in reverse. During the period of the wheel slowing down, the armature current of drive motor goes through the two path-wise diodes to discharge the battery. Thusly, energy waste is avoided. Based on the disturbance compensation, an optimal controller is designed to minimize an eval-uation function which is made up of a weighted sum of position errors and energy consumption. The outputs of the controller are amplified to control the H-bridge. Simulations are performed in MATLAB language. The results show that high precision control can be obtained by the proposed approach. And the energy consumption will be remarkably reduced.

Displacement monitoring of switch track and its slab on a bridge of high speed railway by FBG

NASA Astrophysics Data System (ADS)

Li, Weilai; Li, He; Cheng, Jian; Huang, Xiaomei; Pan, Jianjun; Zhou, Ciming; Yang, Minghong

2011-05-01

In a 350km/h high speed railway line, there is a seamless switch with ballastless slabs built on a bridge. 54 Fiber Bragg Grating detecting cells are employed to monitor the displacement of track and slab. The cell is of extending function of measurement range, up to 50mm displacement, and is of good linearity. Protecting methods for cells and fiber are adopted to keep them surviving from the harsh conditions. The results show that in 75 days, the displacement of the track and sleeper slab was 8-9mm, and the displacement is of high correlation with daily environmental temperature change.

On the Origins of the Intercorrelations Between Solar Wind Variables

NASA Astrophysics Data System (ADS)

Borovsky, Joseph E.

2018-01-01

It is well known that the time variations of the diverse solar wind variables at 1 AU (e.g., solar wind speed, density, proton temperature, electron temperature, magnetic field strength, specific entropy, heavy-ion charge-state densities, and electron strahl intensity) are highly intercorrelated with each other. In correlation studies of the driving of the Earth's magnetosphere-ionosphere-thermosphere system by the solar wind, these solar wind intercorrelations make determining cause and effect very difficult. In this report analyses of solar wind spacecraft measurements and compressible-fluid computer simulations are used to study the origins of the solar wind intercorrelations. Two causes are found: (1) synchronized changes in the values of the solar wind variables as the plasma types of the solar wind are switched by solar rotation and (2) dynamic interactions (compressions and rarefactions) in the solar wind between the Sun and the Earth. These findings provide an incremental increase in the understanding of how the Sun-Earth system operates.

Neural networks supporting switching, hypothesis testing, and rule application

PubMed Central

Liu, Zhiya; Braunlich, Kurt; Wehe, Hillary S.; Seger, Carol A.

2015-01-01

We identified dynamic changes in recruitment of neural connectivity networks across three phases of a flexible rule learning and set-shifting task similar to the Wisconsin Card Sort Task: switching, rule learning via hypothesis testing, and rule application. During fMRI scanning, subjects viewed pairs of stimuli that differed across four dimensions (letter, color, size, screen location), chose one stimulus, and received feedback. Subjects were informed that the correct choice was determined by a simple unidimensional rule, for example “choose the blue letter.” Once each rule had been learned and correctly applied for 4-7 trials, subjects were cued via either negative feedback or visual cues to switch to learning a new rule. Task performance was divided into three phases: Switching (first trial after receiving the switch cue), hypothesis testing (subsequent trials through the last error trial), and rule application (correct responding after the rule was learned). We used both univariate analysis to characterize activity occurring within specific regions of the brain, and a multivariate method, constrained principal component analysis for fMRI (fMRI-CPCA), to investigate how distributed regions coordinate to subserve different processes. As hypothesized, switching was subserved by a limbic network including the ventral striatum, thalamus, and parahippocampal gyrus, in conjunction with cortical salience network regions including the anterior cingulate and frontoinsular cortex. Activity in the ventral striatum was associated with switching regardless of how switching was cued; visually cued shifts were associated with additional visual cortical activity. After switching, as subjects moved into the hypothesis testing phase, a broad fronto-parietal-striatal network (associated with the cognitive control, dorsal attention, and salience networks) increased in activity. This network was sensitive to rule learning speed, with greater extended activity for the slowest learning speed late in the time course of learning. As subjects shifted from hypothesis testing to rule application, activity in this network decreased and activity in the somatomotor and default mode networks increased. PMID:26197092

Neural networks supporting switching, hypothesis testing, and rule application.

PubMed

Liu, Zhiya; Braunlich, Kurt; Wehe, Hillary S; Seger, Carol A

2015-10-01

We identified dynamic changes in recruitment of neural connectivity networks across three phases of a flexible rule learning and set-shifting task similar to the Wisconsin Card Sort Task: switching, rule learning via hypothesis testing, and rule application. During fMRI scanning, subjects viewed pairs of stimuli that differed across four dimensions (letter, color, size, screen location), chose one stimulus, and received feedback. Subjects were informed that the correct choice was determined by a simple unidimensional rule, for example "choose the blue letter". Once each rule had been learned and correctly applied for 4-7 trials, subjects were cued via either negative feedback or visual cues to switch to learning a new rule. Task performance was divided into three phases: Switching (first trial after receiving the switch cue), hypothesis testing (subsequent trials through the last error trial), and rule application (correct responding after the rule was learned). We used both univariate analysis to characterize activity occurring within specific regions of the brain, and a multivariate method, constrained principal component analysis for fMRI (fMRI-CPCA), to investigate how distributed regions coordinate to subserve different processes. As hypothesized, switching was subserved by a limbic network including the ventral striatum, thalamus, and parahippocampal gyrus, in conjunction with cortical salience network regions including the anterior cingulate and frontoinsular cortex. Activity in the ventral striatum was associated with switching regardless of how switching was cued; visually cued shifts were associated with additional visual cortical activity. After switching, as subjects moved into the hypothesis testing phase, a broad fronto-parietal-striatal network (associated with the cognitive control, dorsal attention, and salience networks) increased in activity. This network was sensitive to rule learning speed, with greater extended activity for the slowest learning speed late in the time course of learning. As subjects shifted from hypothesis testing to rule application, activity in this network decreased and activity in the somatomotor and default mode networks increased. Copyright © 2015 Elsevier Ltd. All rights reserved.

Solid state switch panel. [determination of optimum transducer type for required switches

NASA Technical Reports Server (NTRS)

Beenfeldt, E.

1973-01-01

An intensive study of various forms of transducers was conducted with application towards hermetically sealing the transducer and all electronics. The results of the study indicated that the Hall effect devices and a LED/phototransistor combination were the most practical for this type of application. Therefore, hardware was developed utilizing a magnet/Hall effect transducer for single action switches and LED/phototransistor transducers for rotary multiposition or potentiometer applications. All electronics could be housed in a hermetically sealed compartment. A number of switches were built and models were hermetically sealed to prove the feasibility of this type of fabrication. One of each type of switch was subjected to temperature cycling, vibration, and EMI tests. The results of these tests are presented.

Applications of High Speed Networks

DTIC Science & Technology

1991-09-01

plished in order to achieve a dpgree of parallelism by constructing a distributed switch. The type of switch, self -routing, processes the packet...control more than a dozen missiles in flight, and the four Mark 99 target illuminators direct missiles in the terminal phase. The self -contained Phalanx...military installations, weapon system respose and expected missile performance against a threat. Projects are already underway transposing of

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-06-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

A chameleon catalyst for nonheme iron-promoted olefin oxidation.

PubMed

Iyer, Shyam R; Javadi, Maedeh Moshref; Feng, Yan; Hyun, Min Young; Oloo, Williamson N; Kim, Cheal; Que, Lawrence

2014-11-18

We report the chameleonic reactivity of two nonheme iron catalysts for olefin oxidation with H2O2 that switch from nearly exclusive cis-dihydroxylation of electron-poor olefins to the exclusive epoxidation of electron-rich olefins upon addition of acetic acid. This switching suggests a common precursor to the nucleophilic oxidant proposed to Fe(III)-η(2)-OOH and electrophilic oxidant proposed to Fe(V)(O)(OAc), and reversible coordination of acetic acid as a switching pathway.

High speed, intermediate resolution, large area laser beam induced current imaging and laser scribing system for photovoltaic devices and modules

NASA Astrophysics Data System (ADS)

Phillips, Adam B.; Song, Zhaoning; DeWitt, Jonathan L.; Stone, Jon M.; Krantz, Patrick W.; Royston, John M.; Zeller, Ryan M.; Mapes, Meghan R.; Roland, Paul J.; Dorogi, Mark D.; Zafar, Syed; Faykosh, Gary T.; Ellingson, Randy J.; Heben, Michael J.

2016-09-01

We have developed a laser beam induced current imaging tool for photovoltaic devices and modules that utilizes diode pumped Q-switched lasers. Power densities on the order of one sun (100 mW/cm2) can be produced in a ˜40 μm spot size by operating the lasers at low diode current and high repetition rate. Using galvanostatically controlled mirrors in an overhead configuration and high speed data acquisition, large areas can be scanned in short times. As the beam is rastered, focus is maintained on a flat plane with an electronically controlled lens that is positioned in a coordinated fashion with the movements of the mirrors. The system can also be used in a scribing mode by increasing the diode current and decreasing the repetition rate. In either mode, the instrument can accommodate samples ranging in size from laboratory scale (few cm2) to full modules (1 m2). Customized LabVIEW programs were developed to control the components and acquire, display, and manipulate the data in imaging mode.

Cryogenic switched MOSFET characterization

NASA Technical Reports Server (NTRS)

1981-01-01

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

CHEETAH: circuit-switched high-speed end-to-end transport architecture

NASA Astrophysics Data System (ADS)

Veeraraghavan, Malathi; Zheng, Xuan; Lee, Hyuk; Gardner, M.; Feng, Wuchun

2003-10-01

Leveraging the dominance of Ethernet in LANs and SONET/SDH in MANs and WANs, we propose a service called CHEETAH (Circuit-switched High-speed End-to-End Transport ArcHitecture). The service concept is to provide end hosts with high-speed, end-to-end circuit connectivity on a call-by-call shared basis, where a "circuit" consists of Ethernet segments at the ends that are mapped into Ethernet-over-SONET long-distance circuits. This paper focuses on the file-transfer application for such circuits. For this application, the CHEETAH service is proposed as an add-on to the primary Internet access service already in place for enterprise hosts. This allows an end host that is sending a file to first attempt setting up an end-to-end Ethernet/EoS circuit, and if rejected, fall back to the TCP/IP path. If the circuit setup is successful, the end host will enjoy a much shorter file-transfer delay than on the TCP/IP path. To determine the conditions under which an end host with access to the CHEETAH service should attempt circuit setup, we analyze mean file-transfer delays as a function of call blocking probability in the circuit-switched network, probability of packet loss in the IP network, round-trip times, link rates, and so on.

Demonstration of optical computing logics based on binary decision diagram.

PubMed

Lin, Shiyun; Ishikawa, Yasuhiko; Wada, Kazumi

2012-01-16

Optical circuits are low power consumption and fast speed alternatives for the current information processing based on transistor circuits. However, because of no transistor function available in optics, the architecture for optical computing should be chosen that optics prefers. One of which is Binary Decision Diagram (BDD), where signal is processed by sending an optical signal from the root through a serial of switching nodes to the leaf (terminal). Speed of optical computing is limited by either transmission time of optical signals from the root to the leaf or switching time of a node. We have designed and experimentally demonstrated 1-bit and 2-bit adders based on the BDD architecture. The switching nodes are silicon ring resonators with a modulation depth of 10 dB and the states are changed by the plasma dispersion effect. The quality, Q of the rings designed is 1500, which allows fast transmission of signal, e.g., 1.3 ps calculated by a photon escaping time. A total processing time is thus analyzed to be ~9 ps for a 2-bit adder and would scales linearly with the number of bit. It is two orders of magnitude faster than the conventional CMOS circuitry, ~ns scale of delay. The presented results show the potential of fast speed optical computing circuits.

Switching PD-based sliding mode control for hovering of a tilting-thruster underwater robot.

PubMed

Jin, Sangrok; Bak, Jeongae; Kim, Jongwon; Seo, TaeWon; Kim, Hwa Soo

2018-01-01

This paper presents a switching PD-based sliding mode control (PD-SMC) method for the 6-degree-of-freedom (DOF) hovering motion of the underwater robot with tilting thrusters. Four thrusters of robot can be tilted simultaneously in the horizontal and vertical directions, and the 6-DOF motion is achieved by switching between two thruster configurations. Therefore, the tilting speed of thruster becomes the most essential parameter to determine the stability of hovering motion. Even though the previous PD control ensures stable hovering motion within a certain ranges of tilting speed, a PD-SMC is suggested in this paper by combining PD control with sliding mode control in order to achieve acceptable hovering performance even at the much lower tilting speeds. Also, the sign function in the sliding mode control is replaced by a sigmoid function to reduce undesired chattering. Simulations show that while PD control is effective only for tilting duration of 600 ms, the PD-based sliding mode control can guarantee the stable hovering motion of underwater robot even for the tilting duration of up to 1500 ms. Extensive experimental results confirm the hovering performance of the proposed PD-SMC method is much superior to that of PD method for much larger tilting durations.

New coherent laser communication detection scheme based on channel-switching method.

PubMed

Liu, Fuchuan; Sun, Jianfeng; Ma, Xiaoping; Hou, Peipei; Cai, Guangyu; Sun, Zhiwei; Lu, Zhiyong; Liu, Liren

2015-04-01

A new coherent laser communication detection scheme based on the channel-switching method is proposed. The detection front end of this scheme comprises a 90° optical hybrid and two balanced photodetectors which outputs the in-phase (I) channel and quadrature-phase (Q) channel signal current, respectively. With this method, the ultrahigh speed analog/digital transform of the signal of the I or Q channel is not required. The phase error between the signal and local lasers is obtained by simple analog circuit. Using the phase error signal, the signals of the I/Q channel are switched alternately. The principle of this detection scheme is presented. Moreover, the comparison of the sensitivity of this scheme with that of homodyne detection with an optical phase-locked loop is discussed. An experimental setup was constructed to verify the proposed detection scheme. The offline processing procedure and results are presented. This scheme could be realized through simple structure and has potential applications in cost-effective high-speed laser communication.

Global increase in replication fork speed during a p57KIP2-regulated erythroid cell fate switch

PubMed Central

Hwang, Yung; Futran, Melinda; Hidalgo, Daniel; Pop, Ramona; Iyer, Divya Ramalingam; Scully, Ralph; Rhind, Nicholas; Socolovsky, Merav

2017-01-01

Cell cycle regulators are increasingly implicated in cell fate decisions, such as the acquisition or loss of pluripotency and self-renewal potential. The cell cycle mechanisms that regulate these cell fate decisions are largely unknown. We studied an S phase–dependent cell fate switch, in which murine early erythroid progenitors transition in vivo from a self-renewal state into a phase of active erythroid gene transcription and concurrent maturational cell divisions. We found that progenitors are dependent on p57KIP2-mediated slowing of replication forks for self-renewal, a novel function for cyclin-dependent kinase inhibitors. The switch to differentiation entails rapid down-regulation of p57KIP2 with a consequent global increase in replication fork speed and an abruptly shorter S phase. Our work suggests that cell cycles with specialized global DNA replication dynamics are integral to the maintenance of specific cell states and to cell fate decisions. PMID:28560351

Novel all-optical logic gate using an add/drop filter and intensity switch.

PubMed

Threepak, T; Mitatha, S; Yupapin, P P

2011-12-01

A novel design of all-optical logic device is proposed. An all-optical logic device system composes of an optical intensity switch and add/drop filter. The intensity switch is formed to switch signal by using the relationship between refraction angle and signal intensity. In operation, two input signals are coupled into one with some coupling loss and attenuation, in which the combination of add/drop with intensity switch produces the optical logic gate. The advantage is that the proposed device can operate the high speed logic function. Moreover, it uses low power consumption. Furthermore, by using the extremely small component, this design can be put into a single chip. Finally, we have successfully produced the all-optical logic gate that can generate the accurate AND and NOT operation results.

Preliminary study, analysis and design for a power switch for digital engine actuators

NASA Technical Reports Server (NTRS)

Beattie, E. C.; Zickwolf, H. C., Jr.

1979-01-01

Innovative control configurations using high temperature switches to operate actuator driving solenoids were studied. The impact on engine control system life cycle costs and reliability of electronic control and (ECU) heat dissipation due to power conditioning and interface drivers were addressed. Various power supply and actuation schemes were investigated, including optical signal transmission and electronics on the actuator, engine driven alternator, and inside the ECU. The use of a switching shunt power conditioner results in the most significant decrease in heat dissipation within the ECU. No overall control system reliability improvement is projected by the use of remote high temperature switches for solenoid drivers.

New Remote Gas Sensor Using Rapid Electro-Optical Path Switching

NASA Technical Reports Server (NTRS)

Sachse, G. W.; Lebel, P. J.; Wallio, H. A.; Vay, S. A.; Wang, L. G.

1994-01-01

Innovative gas filter correlation radiometer (GFCR) features nonmechanical switching of internal optical paths. Incoming radiation switched electro-optically, by means of polarization, between two optical paths, one of which contains correlation gas cell while other does not. Advantages include switching speed, 2 to 3 orders of magnitude faster than mechanical techniques, and high reliability. Applications include regional studies of atmospheric chemistry from either manned or unmanned aircraft as well as satellite studies of global distributions, sources and sink mechanisms for key species involved in chemistry of troposphere. Commercial applications: ability to survey many miles of natural gas pipelines rapidly from aircraft, pinpointing gas leaks by measuring methane at 2.3 micrometers.

An open-closed-loop iterative learning control approach for nonlinear switched systems with application to freeway traffic control

NASA Astrophysics Data System (ADS)

Sun, Shu-Ting; Li, Xiao-Dong; Zhong, Ren-Xin

2017-10-01

For nonlinear switched discrete-time systems with input constraints, this paper presents an open-closed-loop iterative learning control (ILC) approach, which includes a feedforward ILC part and a feedback control part. Under a given switching rule, the mathematical induction is used to prove the convergence of ILC tracking error in each subsystem. It is demonstrated that the convergence of ILC tracking error is dependent on the feedforward control gain, but the feedback control can speed up the convergence process of ILC by a suitable selection of feedback control gain. A switched freeway traffic system is used to illustrate the effectiveness of the proposed ILC law.

FPGA Based Reconfigurable ATM Switch Test Bed

NASA Technical Reports Server (NTRS)

Chu, Pong P.; Jones, Robert E.

1998-01-01

Various issues associated with "FPGA Based Reconfigurable ATM Switch Test Bed" are presented in viewgraph form. Specific topics include: 1) Network performance evaluation; 2) traditional approaches; 3) software simulation; 4) hardware emulation; 5) test bed highlights; 6) design environment; 7) test bed architecture; 8) abstract sheared-memory switch; 9) detailed switch diagram; 10) traffic generator; 11) data collection circuit and user interface; 12) initial results; and 13) the following conclusions: Advances in FPGA make hardware emulation feasible for performance evaluation, hardware emulation can provide several orders of magnitude speed-up over software simulation; due to the complexity of hardware synthesis process, development in emulation is much more difficult than simulation and requires knowledge in both networks and digital design.

Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator

NASA Astrophysics Data System (ADS)

Cuansing, Eduardo C.; Liang, Gengchiau

2011-10-01

Time-dependent nonequilibrium Green's functions are used to study electron transport properties in a device consisting of two linear chain leads and a time-dependent interlead coupling that is switched on non-adiabatically. We derive a numerically exact expression for the particle current and examine its characteristics as it evolves in time from the transient regime to the long-time steady-state regime. We find that just after switch-on, the current initially overshoots the expected long-time steady-state value, oscillates and decays as a power law, and eventually settles to a steady-state value consistent with the value calculated using the Landauer formula. The power-law parameters depend on the values of the applied bias voltage, the strength of the couplings, and the speed of the switch-on. In particular, the oscillating transient current decays away longer for lower bias voltages. Furthermore, the power-law decay nature of the current suggests an equivalent series resistor-inductor-capacitor circuit wherein all of the components have time-dependent properties. Such dynamical resistive, inductive, and capacitive influences are generic in nano-circuits where dynamical switches are incorporated. We also examine the characteristics of the dynamical current in a nano-oscillator modeled by introducing a sinusoidally modulated interlead coupling between the two leads. We find that the current does not strictly follow the sinusoidal form of the coupling. In particular, the maximum current does not occur during times when the leads are exactly aligned. Instead, the times when the maximum current occurs depend on the values of the bias potential, nearest-neighbor coupling, and the interlead coupling.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

DOEpatents

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

2013-01-15

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide

DTIC Science & Technology

2014-12-04

demonstrated by using photothermal heating to induce the VO2 semiconductor-to- metal phase transition and modulate the transmitted optical signal...speeds. By utilizing the sub-picosecond semiconductor-to- metal transition (SMT) in VO2 as the active switching mechanism that enables direct... metallic phases. The steep slope, high contrast, and relatively narrow hysteresis exhibited by these reflectivity measurements indicate the high quality

25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

PubMed

Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

2014-01-13

25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

40-Gbit/s all-optical circulating shift register with an inverter.

PubMed

Hall, K L; Donnelly, J P; Groves, S H; Fennelly, C I; Bailey, R J; Napoleone, A

1997-10-01

We report what is believed to be the first demonstration of an all-optical circulating shift register using an ultrafast nonlinear interferometer with a polarization-insensitive semiconductor optical amplifier as the nonlinear switching element. The device operates at 40 Gbits/s, to our knowledge the highest speed demonstrated to date. Also, the demonstration proves the cascadability of the ultrafast nonlinear interferometric switch.

Fast packet switch architectures for broadband integrated services digital networks

NASA Technical Reports Server (NTRS)

Tobagi, Fouad A.

1990-01-01

Background information on networking and switching is provided, and the various architectures that have been considered for fast packet switches are described. The focus is solely on switches designed to be implemented electronically. A set of definitions and a brief description of the functionality required of fast packet switches are given. Three basic types of packet switches are identified: the shared-memory, shared-medium, and space-division types. Each of these is described, and examples are given.

Electro-optofluidics: achieving dynamic control on-chip

PubMed Central

Soltani, Mohammad; Inman, James T.; Lipson, Michal; Wang, Michelle D.

2012-01-01

A vital element in integrated optofluidics is dynamic tuning and precise control of photonic devices, especially when employing electronic techniques which are challenging to utilize in an aqueous environment. We overcome this challenge by introducing a new platform in which the photonic device is controlled using electro-optical phase tuning. The phase tuning is generated by the thermo-optic effect using an on-chip electric microheater located outside the fluidic channel, and is transmitted to the optofluidic device through optical waveguides. The microheater is compact, high-speed (> 18 kHz), and consumes low power (~mW). We demonstrate dynamic optical trapping control of nanoparticles by an optofluidic resonator. This novel electro-optofluidic platform allows the realization of high throughput optofluidic devices with switching, tuning, and reconfiguration capability, and promises new directions in optofluidics. PMID:23037380

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Coordinated Speed Oscillations in Schooling Killifish Enrich Social Communication

NASA Astrophysics Data System (ADS)

Swain, Daniel T.; Couzin, Iain D.; Leonard, Naomi Ehrich

2015-10-01

We examine the spatial dynamics of individuals in small schools of banded killifish ( Fundulus diaphanus) that exhibit rhythmic, oscillating speed, typically with sustained, coordinated, out-of-phase speed oscillations as they move around a shallow water tank. We show that the relative motion among the fish yields a periodically time-varying network of social interactions that enriches visually driven social communication. The oscillations lead to the regular making and breaking of occlusions, which we term "switching." We show that the rate of convergence to consensus (biologically, the capacity for individuals in groups to achieve effective coordinated motion) governed by the switching outperforms static alternatives, and performs as well as the less practical case of every fish sensing every other fish. We show further that the oscillations in speed yield oscillations in relative bearing between fish over a range that includes the angles previously predicted to be optimal for a fish to detect changes in heading and speed of its neighbors. To investigate systematically, we derive and analyze a dynamic model of interacting agents that move with oscillatory speed. We show that coordinated circular motion of the school leads to systematic cycling of spatial ordering of agents and possibilities for enriched spatial density of measurements of the external environment. Our results highlight the potential benefits of dynamic communication topologies in collective animal behavior, and suggest new, useful control laws for the distributed coordination of mobile robotic networks.

Windscapes shape seabird instantaneous energy costs but adult behavior buffers impact on offspring.

PubMed

Elliott, Kyle Hamish; Chivers, Lorraine S; Bessey, Lauren; Gaston, Anthony J; Hatch, Scott A; Kato, Akiko; Osborne, Orla; Ropert-Coudert, Yan; Speakman, John R; Hare, James F

2014-01-01

Windscapes affect energy costs for flying animals, but animals can adjust their behavior to accommodate wind-induced energy costs. Theory predicts that flying animals should decrease air speed to compensate for increased tailwind speed and increase air speed to compensate for increased crosswind speed. In addition, animals are expected to vary their foraging effort in time and space to maximize energy efficiency across variable windscapes. We examined the influence of wind on seabird (thick-billed murre Uria lomvia and black-legged kittiwake Rissa tridactyla) foraging behavior. Airspeed and mechanical flight costs (dynamic body acceleration and wing beat frequency) increased with headwind speed during commuting flights. As predicted, birds adjusted their airspeed to compensate for crosswinds and to reduce the effect of a headwind, but they could not completely compensate for the latter. As we were able to account for the effect of sampling frequency and wind speed, we accurately estimated commuting flight speed with no wind as 16.6 ms(?1) (murres) and 10.6 ms(?1) (kittiwakes). High winds decreased delivery rates of schooling fish (murres), energy (murres) and food (kittiwakes) but did not impact daily energy expenditure or chick growth rates. During high winds, murres switched from feeding their offspring with schooling fish, which required substantial above-water searching, to amphipods, which required less above-water searching. Adults buffered the adverse effect of high winds on chick growth rates by switching to other food sources during windy days or increasing food delivery rates when weather improved.

Conductive bridging random access memory—materials, devices and applications

NASA Astrophysics Data System (ADS)

Kozicki, Michael N.; Barnaby, Hugh J.

2016-11-01

We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Electron transport and light-harvesting switches in cyanobacteria

PubMed Central

Mullineaux, Conrad W.

2014-01-01

Cyanobacteria possess multiple mechanisms for regulating the pathways of photosynthetic and respiratory electron transport. Electron transport may be regulated indirectly by controlling the transfer of excitation energy from the light-harvesting complexes, or it may be more directly regulated by controlling the stoichiometry, localization, and interactions of photosynthetic and respiratory electron transport complexes. Regulation of the extent of linear vs. cyclic electron transport is particularly important for controlling the redox balance of the cell. This review discusses what is known of the regulatory mechanisms and the timescales on which they occur, with particular regard to the structural reorganization needed and the constraints imposed by the limited mobility of membrane-integral proteins in the crowded thylakoid membrane. Switching mechanisms requiring substantial movement of integral thylakoid membrane proteins occur on slower timescales than those that require the movement only of cytoplasmic or extrinsic membrane proteins. This difference is probably due to the restricted diffusion of membrane-integral proteins. Multiple switching mechanisms may be needed to regulate electron transport on different timescales. PMID:24478787

Resistive switching behavior in oxygen ion irradiated TiO2-x films

NASA Astrophysics Data System (ADS)

Barman, A.; Saini, C. P.; Sarkar, P. K.; Bhattacharjee, G.; Bhattacharya, G.; Srivastava, S.; Satpati, B.; Kanjilal, D.; Ghosh, S. K.; Dhar, S.; Kanjilal, A.

2018-02-01

The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2-x layers at an ion fluence of 5  ×  1016 ions cm-2 is reported. A clear transformation from columnar to layered polycrystalline films is revealed by transmission electron microscopy with increasing ion fluence, while the complementary electron energy loss spectroscopy suggests an evolution of oxygen vacancy (OV) in TiO2-x matrix. This is further verified by determining electron density with the help of x-ray reflectivity. Both local and device current-voltage measurements illustrate that the ion-beam induced OVs play a key role in bistable resistive switching mechanism.

New super-computing facility in RIKEN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohta, Shigemi

1994-12-31

A new superconductor, Fujitsu VPP500/28, was installed in the Institute of Physical and Chemical Research (RIKEN) at the end of March, 1994. It consists of 28 processing elements (PE`s) connected by a high-speed crossbar switch. The switch is a combination of GaAs and ECL circuitry with peak band width of 800 Mbyte per second. Each PE consists of a GaAs/ECL vector processor with 1.6 Gflops peak speed and 256 Mbyte SRAM local memory. In addition, there are 8 GByte DRAM space, two 100 Gbyte RAID disks and a 10 TByte archive based on SONY File Bank system. The author ranmore » three major benchmarks on this machine: modified LINPACK, lattice QCD and FFT. In the modified LINPACK benchmark, a sustained speed of about 28 Gflops is achieved, by removing the restriction on the size of the matrices. In the lattice QCD benchmark, a sustained speed of about 30 Gflops is achieved for inverting staggered fermion propagation matrix on a 32{sup 4} lattice. In the FFT benchmark, real data of 32, 128, 512, and 2048 MByte are Fourier-transformed. The sustained speed for each is respectively 21, 21, 20, and 19 Gflops. The numbers are obtained after only a few weeks of coding efforts and can be improved further.« less

Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

NASA Astrophysics Data System (ADS)

Singh, Bharti; Mehta, B. R.; Govind, Feng, X.; Müllen, Klaus

2011-11-01

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

2016-05-15

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

Ultra-wideband high-speed Mach-Zehnder switch based on hybrid plasmonic waveguides.

PubMed

Janjan, Babak; Fathi, Davood; Miri, Mehdi; Ghaffari-Miab, Mohsen

2017-02-20

In this paper, the distinctive dispersion characteristic of hybrid plasmonic waveguides is exploited for designing ultra-wideband directional couplers. It is shown that by using optimized geometrical dimensions for hybrid plasmonic waveguides, nearly wavelength-independent directional couplers can be achieved. These broadband directional couplers are then used to design Mach-Zehnder-interferometer-based switches. Our simulation results show the ultra-wide bandwidth of ∼260  nm for the proposed hybrid plasmonic-waveguide-based switch. Further investigation of the proposed Mach-Zehnder switch confirms that because of the strong light confinement in the hybrid plasmonic waveguide structure, the switching time, power consumption, and overall footprint of the device can be significantly improved compared to silicon-ridge-waveguide-based Mach-Zehnder switches. For the Mach-Zehnder switch designed by using the optimized directional coupler, the switching time is found to be less than one picosecond, while the power consumption, V_πL_π figure of merit, and active length of the device are ∼61  fJ/bit, 85  V×μm, and 30 μm, respectively.

All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling.

PubMed

Lin, Yen-Chih; Mao, Ming-Hua; Lin, You-Ru; Lin, Hao-Hsiung; Lin, Che-An; Wang, Lon A

2014-09-01

We demonstrate ultrafast all-optical switching in GaAs microdisk resonators using a femtosecond pump-probe technique through tapered-fiber coupling. The temporal tuning of the resonant modes resulted from the refractive index change due to photoexcited carrier density variation inside the GaAs microdisk resonator. Transmission through the GaAs microdisk resonator can be modulated by more than 10 dB with a switching time window of 8 ps in the switch-off operation using pumping pulses with energies as low as 17.5 pJ. The carrier lifetime was fitted to be 42 ps, much shorter than that of the bulk GaAs, typically of the order of nanoseconds. The above observation indicates that the surface recombination plays an important role in increasing the switching speed.

Switching for electric rail guns

NASA Astrophysics Data System (ADS)

Barber, J. P.; Bauer, D. P.

1984-03-01

The switching requirements of single-stage electric railguns powered by inductive energy stores are analyzed, and the design of a 500-kA commutation switch is shown. The closed, commutation, and off states of the switch and the reclosure function at the end of the projectile acceleration are discussed in general terms, and the specific requirements of the railgun facility at Australian National University are listed. The switch designed is essentially a railgun mounted perpendicular to the breech of the electric railgun, with the armature accelerating down copper rails at closing speeds from 50 m/sec at 100 kA to 300 m/sec at 500 kA to commutate current to the railgun. Commutation time and maximum voltage during 200 shots at 400 kA were found to be 50 microsec and 100 V; commutation inductance was 18-20 nH.

Fully Printed High-Frequency Phased-Array Antenna on Flexible Substrate

NASA Technical Reports Server (NTRS)

Chen, Yihong; Lu, Xuejun

2010-01-01

To address the issues of flexible electronics needed for surface-to-surface, surface-to-orbit, and back-to-Earth communications necessary for manned exploration of the Moon, Mars, and beyond, a room-temperature printing process has been developed to create active, phased-array antennas (PAAs) on a flexible Kapton substrate. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proven feasible for phased-array antenna systems. The carrier mobility of an individual CNT is estimated to be at least 100,000 sq cm/V(dot)s. The CNT network in solution has carrier mobility as high as 46,770 sq cm/V(dot)s, and has a large current-density carrying capacity of approx. 1,000 mA/sq cm , which corresponds to a high carrying power of over 2,000 mW/ sq cm. Such high carrier mobility, and large current carrying capacity, allows the achievement of high-speed (>100 GHz), high-power, flexible electronic circuits that can be monolithically integrated on NASA s active phasedarray antennas for various applications, such as pressurized rovers, pressurized habitats, and spacesuits, as well as for locating beacon towers for lunar surface navigation, which will likely be performed at S-band and attached to a mobile astronaut. A fully printed 2-bit 2-element phasedarray antenna (PAA) working at 5.6 GHz, incorporating the CNT FETs as phase shifters, is demonstrated. The PAA is printed out at room temperature on 100-mm thick Kapton substrate. Four CNT FETs are printed together with microstrip time delay lines to function as a 2-bit phase shifter. The FET switch exhibits a switching speed of 0.2 ns, and works well for a 5.6-GHz RF signal. The operating frequency is measured to be 5.6 GHz, versus the state-of-the-art flexible FET operating frequency of 52 MHz. The source-drain current density is measured to be over 1,000 mA/sq cm, while the conventional organic FETs, and single carbon nanotube-based FETs, are typically in the mA to mA/sq cm range. The switching voltage used is 1.8 V, while the state-of-the-art flexible FET has a gate voltage around 50 V. The gate voltage can effectively control the source-drain current with an ON-OFF ratio of over 1,000 obtained at a low Vds bias of 1.8 V. The azimuth steering angles of PAA are measured at 0deg, -14.5deg, -30deg, and 48.6deg. The measured far-field patterns agree well with simulation results. The efficiency of the 2-bit 2-element PAA is measured to be 39 percent, including the loss of transmission line, FET switch, and coupling loss of RF probes. With further optimization, the efficiency is expected to be around 50-60 percent.

Ultrafast optical transistor and router of multi-order fluorescence and spontaneous parametric four-wave mixing in Pr³⁺:YSO.

PubMed

Wen, Feng; Ali, Imran; Hasan, Abdulkhaleq; Li, Changbiao; Tang, Haijun; Zhang, Yufei; Zhang, Yanpeng

2015-10-15

We study the realization of an optical transistor (switch and amplifier) and router in multi-order fluorescence (FL) and spontaneous parametric four-wave mixing (SP-FWM). We estimate that the switching speed is about 15 ns. The router action results from the Autler-Townes splitting in spectral or time domain. The switch and amplifier are realized by dressing suppression and enhancement in FL and SP-FWM. The optical transistor and router can be controlled by multi-parameters (i.e., power, detuning, or polarization).

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, P.J.; Tucker, T.J.

1986-05-02

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, Phillip J.; Tucker, Tillman J.

1987-01-01

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

Fiber-optical switch using cam-micromotor driven by scratch drive actuators

NASA Astrophysics Data System (ADS)

Kanamori, Y.; Aoki, Y.; Sasaki, M.; Hosoya, H.; Wada, A.; Hane, K.

2005-01-01

We fabricated a 1 × 1 fiber-optic switch using a cam-micromotor driven by scratch drive actuators (SDAs). Using the cam-micromotor, mechanical translation and precise positioning of an optical fiber were performed. An optical fiber of diameter 50 µm was bent and pushed out with a cam-mechanism driven by the SDAs fabricated by surface micromachining. The maximum rotation speed of the cam-micromotor was 7.5 rpm at a driving frequency of 1.5 kHz. The transient time of the switch to attenuate coupling efficiency less than -40 dB was around 10 ms.

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

2003-01-01

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

2004-01-01

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

Low inductance power electronics assembly

DOEpatents

Herron, Nicholas Hayden; Mann, Brooks S.; Korich, Mark D.; Chou, Cindy; Tang, David; Carlson, Douglas S.; Barry, Alan L.

2012-10-02

A power electronics assembly is provided. A first support member includes a first plurality of conductors. A first plurality of power switching devices are coupled to the first support member. A first capacitor is coupled to the first support member. A second support member includes a second plurality of conductors. A second plurality of power switching devices are coupled to the second support member. A second capacitor is coupled to the second support member. The first and second pluralities of conductors, the first and second pluralities of power switching devices, and the first and second capacitors are electrically connected such that the first plurality of power switching devices is connected in parallel with the first capacitor and the second capacitor and the second plurality of power switching devices is connected in parallel with the second capacitor and the first capacitor.

Switching behaviors of graphene-boron nitride nanotube heterojunctions

DOE PAGES

Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; ...

2015-07-20

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

Electronic transport properties of a quinone-based molecular switch

NASA Astrophysics Data System (ADS)

Zheng, Ya-Peng; Bian, Bao-An; Yuan, Pei-Pei

2016-09-01

In this paper, we carried out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a quinone-based molecule sandwiched between two Au electrodes. The molecular switch can be reversibly switched between the reduced hydroquinone (HQ) and oxidized quinone (Q) states via redox reactions. The switching behavior of two forms is analyzed through their I- V curves, transmission spectra and molecular projected self-consistent Hamiltonian at zero bias. Then we discuss the transmission spectra of the HQ and Q forms at different bias, and explain the oscillation of current according to the transmission eigenstates of LUMO energy level for Q form. The results suggest that this kind of a quinone-based molecule is usable as one of the good candidates for redox-controlled molecular switches.

47 CFR 36.121 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2011 CFR

2011-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2010 CFR

2010-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

Effects of the electron-phonon coupling activation in collision cascades

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

Using the two-temperature (2T-MD) model in molecular dynamics simulations, here we investigate the condition of switching the electronic stopping term off when the electron-phonon coupling is activated in the damage production due to 50 keV Ni ion cascades in Ni and equiatomic NiFe. Additionally we investigate the effect of the electron-phonon coupling activation time in the damage production. We find that the switching condition has negligible effect in the produced damage, while the choice of the activation time of the electron-phonon coupling can affect the amount of surviving damage.

Effects of the electron-phonon coupling activation in collision cascades

DOE PAGES

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

2017-04-20

Using the two-temperature (2T-MD) model in molecular dynamics simulations, here we investigate the condition of switching the electronic stopping term off when the electron-phonon coupling is activated in the damage production due to 50 keV Ni ion cascades in Ni and equiatomic NiFe. Additionally we investigate the effect of the electron-phonon coupling activation time in the damage production. We find that the switching condition has negligible effect in the produced damage, while the choice of the activation time of the electron-phonon coupling can affect the amount of surviving damage.

Organic-based molecular switches for molecular electronics.

PubMed

Fuentes, Noelia; Martín-Lasanta, Ana; Alvarez de Cienfuegos, Luis; Ribagorda, Maria; Parra, Andres; Cuerva, Juan M

2011-10-05

In a general sense, molecular electronics (ME) is the branch of nanotechnology which studies the application of molecular building blocks for the fabrication of electronic components. Among the different types of molecules, organic compounds have been revealed as promising candidates for ME, due to the easy access, great structural diversity and suitable electronic and mechanical properties. Thanks to these useful capabilities, organic molecules have been used to emulate electronic devices at the nanoscopic scale. In this feature article, we present the diverse strategies used to develop organic switches towards ME with special attention to non-volatile systems.

Electron beam magnetic switch for a plurality of free electron lasers

DOEpatents

Schlitt, Leland G.

1984-01-01

Apparatus for forming and utilizing a sequence of electron beam segments, each of the same temporal length (substantially 15 nsec), with consecutive beams being separated by a constant time interval of the order of 3 nsec. The beam sequence is used for simultaneous inputs to a plurality of wiggler magnet systems that also accept the laser beams to be amplified by interaction with the co-propagating electron beams. The electron beams are arranged substantially in a circle to allow proper distribution of and simultaneous switching out of the beam segments to their respective wiggler magnets.

Electron-impact ionization and electron attachment cross sections of radicals important in transient gaseous discharges

NASA Technical Reports Server (NTRS)

Lee, Long C.; Srivastava, Santosh K.

1990-01-01

Electron-impact ionization and electron attachment cross sections of radicals and excited molecules were measured using an apparatus that consists of an electron beam, a molecular beam and a laser beam. The information obtained is needed for the pulse power applications in the areas of high power gaseous discharge switches, high energy lasers, particle beam experiments, and electromagnetic pulse systems. The basic data needed for the development of optically-controlled discharge switches were also investigated. Transient current pulses induced by laser irradiation of discharge media were observed and applied for the study of electron-molecule reaction kinetics in gaseous discharges.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

An agile high-capacity FDMA digital satellite network

NASA Astrophysics Data System (ADS)

Hawkins, R. B.; Johannes, V. I.; Lowell, R.

A centrally controlled digital transmission satellite network has been designed for High Speed Switched Digital Service (HSSDS), which uses both satellite and earth transmission facilities to provide point-to-point digital trunks on a reservation basis. HSSDS customers connect via 1.544 Mb/s loops to the nodes where switches are located, and the FDMA system employed offers 24 one-way 1.544 Mb/s trunks per satellite transponder.

A Transformerless Hybrid Active Filter Capable of Complying with Harmonic Guidelines for Medium-Voltage Motor Drives

NASA Astrophysics Data System (ADS)

Kondo, Ryota; Akagi, Hirofumi

This paper presents a transformerless hybrid active filter that is integrated into medium-voltage adjustable-speed motor drives for fans, pumps, and compressors without regenerative braking. The authors have designed and constructed a three-phase experimental system rated at 400V and 15kW, which is a downscaled model from a feasible 6.6-kV 1-MW motor drive system. This system consists of the hybrid filter connecting a passive filter tuned to the 7th harmonic filter in series with an active filter that is based on a three-level diode-clamped PWM converter, as well as an adjustable-speed motor drive in which a diode rectifier is used as the front end. The hybrid filter is installed on the ac side of the diode rectifier with no line-frequency transformer. The downscaled system has been exclusively tested so as to confirm the overall compensating performance of the hybrid filter and the filtering performance of a switching-ripple filter for mitigating switching-ripple voltages produced by the active filter. Experimental results verify that the hybrid filter achieves harmonic compensation of the source current in all the operating regions from no-load to the rated-load conditions, and that the switching-ripple filter reduces the switching-ripple voltages as expected.

Reconfigurable optofluidic switch for generation of optical pulse width modulation based on tunable reflective interface.

PubMed

Mansuori, M; Zareei, G H; Hashemi, H

2015-10-01

We present a numerical method for generation of optical pulse width modulation (PWM) based on tunable reflective interface by using a microfluidic droplet. We demonstrate a single layer, planar, optofluidic PWM switch that is driven by excited alternating microbubbles. The main parameters of generation of this PWM such as frequency and speed of switching can be controlled by the mass flow rates of input fluids, and the shape of plug or droplet. Advantages of this design are the reconfigurability in design and the easy control of the switching parameters. The validation of the proposed design is carried out by employing the finite element method (FEM) for the mechanical simulation and the finite-difference time-domain (FDTD) for the optical simulation.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe

NASA Astrophysics Data System (ADS)

Nakano, Haruhisa; Takahashi, Makoto; Sato, Motonobu; Kotsugi, Masato; Ohkochi, Takuo; Muro, Takayuki; Nihei, Mizuhisa; Yokoyama, Naoki

2013-11-01

The resistive switching characteristics of a TiO2/Ti structure have been investigated using a conductive atomic force microscopy (AFM) system with 5-nm-diameter carbon nanotube (CNT) probes. The resistive switching showed bipolar resistive random access memory (ReRAM) behaviors with extremely low switching currents in the order of Picoamperes when voltages were applied. From transmission electron microscopy (TEM) observation, we confirmed that filament-like nanocrystals, having a diameter of about 10 nm, existed in TiO2 films at resistive switching areas after not only set operation but also reset operation. Moreover, photoemission electron microscopy (PEEM) analysis showed that the anatase-type TiO2 structure did not change after set and reset operations. From these results, we suggested that the Picoampere resistive switching occurred at the interface between the TiO2 dielectric and conductive nanocrystal without any structural changes in the TiO2 film and nanocrystal. The resistive switching mechanism we suggested is highly promising to realize extremely low-power-consumption ReRAMs with vertically contacted CNT electrodes.

Electro-optic Q-switch

NASA Technical Reports Server (NTRS)

Zou, Yingyin (Inventor); Chen, Qiushui (Inventor); Zhang, Run (Inventor); Jiang, Hua (Inventor)

2006-01-01

An electro-optic Q-switch for generating sequence of laser pulses was disclosed. The Q-switch comprises a quadratic electro-optic material and is connected with an electronic unit generating a radio frequency wave with positive and negative pulses alternatively. The Q-switch is controlled by the radio frequency wave in such a way that laser pulse is generated when the radio frequency wave changes its polarity.

Gamma-ray irradiation of ohmic MEMS switches

NASA Astrophysics Data System (ADS)

Maciel, John J.; Lampen, James L.; Taylor, Edward W.

2012-10-01

Radio Frequency (RF) Microelectromechanical System (MEMS) switches are becoming important building blocks for a variety of military and commercial applications including switch matrices, phase shifters, electronically scanned antennas, switched filters, Automatic Test Equipment, instrumentation, cell phones and smart antennas. Low power consumption, large ratio of off-impedance to on-impedance, extreme linearity, low mass, small volume and the ability to be integrated with other electronics makes MEMS switches an attractive alternative to other mechanical and solid-state switches for a variety of space applications. Radant MEMS, Inc. has developed an electrostatically actuated broadband ohmic microswitch that has applications from DC through the microwave region. Despite the extensive earth based testing, little is known about the performance and reliability of these devices in space environments. To help fill this void, we have irradiated our commercial-off-the-shelf SPST, DC to 40 GHz MEMS switches with gamma-rays as an initial step to assessing static impact on RF performance. Results of Co-60 gamma-ray irradiation of the MEMS switches at photon energies ≥ 1.0 MeV to a total dose of ~ 118 krad(Si) did not show a statistically significant post-irradiation change in measured broadband, RF insertion loss, insertion phase, return loss and isolation.

Research on the electromagnetic radiation characteristics of the gas main switch of a capacitive intense electron-beam accelerator

NASA Astrophysics Data System (ADS)

Qiu, Yongfeng; Liu, Jinliang; Yang, Jianhua; Cheng, Xinbing; Li, Guolin

2017-11-01

Strong electromagnetic fields are radiated during the operation of the intense electron-beam accelerator (IEBA), which may lead to the nearby electronic devices out of order. In this paper, the research on the electromagnetic radiation characteristic of the gas main switch of a capacitive IEBA is carried out by the methods of theory analysis and experiment investigation. It is obtained that the gas main switch is the dominating radiation resource. In the absence of electromagnetic shielding for the gas main switch, when the pulse forming line of the IEBA is charged to 700 kV, the radiation field with amplitude of 3280 V/m, dominant frequency of 84 MHz and high frequency 100 MHz is obtained at a distance of 10 meters away from the gas main switch. The experimental results of the radiation field agree with the theoretical calculations. We analyze the achievements of several research groups and find that there is a relationship between the rise time (T) of the transient current of the gas main switch and the dominant frequency (F) of the radiation field, namely, F*T=1. Contrast experiment is carried out with a metal shield cover for the gas main switch. Experimental results show that for the shielded setup the radiation field reduces to 115 V/m, the dominant frequency increases to 86.5 MHz at a distance of 10 away meters from the gas main switch. These conclusions are beneficial for further research on the electromagnetic radiation and protection of the IEBA.

Response characteristic of high-speed on/off valve with double voltage driving circuit

NASA Astrophysics Data System (ADS)

Li, P. X.; Su, M.; Zhang, D. B.

2017-07-01

High-speed on/off valve, an important part of turbocharging system, its quick response has a direct impact on the turbocharger pressure cycle. The methods of improving the response characteristic of high speed on/off valve include increasing the magnetic force of armature and the voltage, decreasing the mass and current of coil. The less coil number of turns, the solenoid force is smaller. The special armature structure and the magnetic material will raise cost. In this paper a new scheme of double voltage driving circuit is investigated, in which the original driving circuit of high-speed on/off valve is replaced by double voltage driving circuit. The detailed theoretical analysis and simulations were carried out on the double voltage driving circuit, it showed that the switching time and delay time of the valve respectively are 3.3ms, 5.3ms, 1.9ms and 1.8ms. When it is driven by the double voltage driving circuit, the switching time and delay time of this valve are reduced, optimizing its response characteristic. By the comparison related factors (such as duty cycle or working frequency) about influences on response characteristic, the superior of double voltage driving circuit has been further confirmed.

Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet Mn2Au

NASA Astrophysics Data System (ADS)

Zhou, X. F.; Zhang, J.; Li, F.; Chen, X. Z.; Shi, G. Y.; Tan, Y. Z.; Gu, Y. D.; Saleem, M. S.; Wu, H. Q.; Pan, F.; Song, C.

2018-05-01

Antiferromagnets with zero net magnetic moment, strong anti-interference, and ultrafast switching speed are potentially competitive in high-density information storage. The body-centered tetragonal antiferromagnet Mn2Au with opposite-spin sublattices is a unique metallic material for Néel-order spin-orbit-torque (SOT) switching. We investigate the SOT switching in quasiepitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current-induced antiferromagnetic moment switching in all of the prepared Mn2Au films by using a short current pulse at room temperature, whereas differently oriented films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but it becomes attenuated seriously during initial switching circles when the current is applied along the hard axis because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation-dependent SOT switching, which is not realized, irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.

Switching Matrix For Optical Signals

NASA Technical Reports Server (NTRS)

Grove, Charles H.

1990-01-01

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

High Peak Power Test and Evaluation of S-band Waveguide Switches

NASA Astrophysics Data System (ADS)

Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

1997-05-01

The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

Miniaturized, High-Speed, Modulated X-Ray Source

NASA Technical Reports Server (NTRS)

Gendreau, Keith; Arzoumanian, Zaven; Kenyon, Steve; Spartana, Nick

2013-01-01

A low-cost, miniature x-ray source has been developed that can be modulated in intensity from completely off to full intensity on nanosecond timescales. This modulated x-ray source (MXS) has no filaments and is extremely rugged. The energy level of the MXS is adjustable from 0 to more than 100 keV. It can be used as the core of many new devices, providing the first practical, arbitrarily time-variable source of x-rays. The high-speed switching capability and miniature size make possible many new technologies including x-ray-based communication, compact time-resolved x-ray diffraction, novel x-ray fluorescence instruments, and low- and precise-dose medical x-rays. To make x-rays, the usual method is to accelerate electrons into a target material held at a high potential. When the electrons stop in the target, x-rays are produced with a spectrum that is a function of the target material and the energy to which the electrons are accelerated. Most commonly, the electrons come from a hot filament. In the MXS, the electrons start off as optically driven photoelectrons. The modulation of the x-rays is then tied to the modulation of the light that drives the photoelectron source. Much of the recent development has consisted of creating a photoelectrically-driven electron source that is robust, low in cost, and offers high intensity. For robustness, metal photocathodes were adopted, including aluminum and magnesium. Ultraviolet light from 255- to 350-nm LEDs (light emitting diodes) stimulated the photoemissions from these photocathodes with an efficiency that is maximized at the low-wavelength end (255 nm) to a value of roughly 10(exp -4). The MXS units now have much higher brightness, are much smaller, and are made using a number of commercially available components, making them extremely inexpensive. In the latest MXS design, UV efficiency is addressed by using a high-gain electron multiplier. The photocathode is vapor-deposited onto the input cone of a Burle Magnum(TradeMark) multiplier. This system yields an extremely robust photon-driven electron source that can tolerate long, weeks or more, exposure to air with negligible degradation. The package is also small. When combined with the electron target, necessary vacuum fittings, and supporting components (but not including LED electronics or high-voltage sources), the entire modulated x-ray source weighs as little as 158 grams.

Anode initiated surface flashover switch

DOEpatents

Brainard, John P.; Koss, Robert J.

2003-04-29

A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

Compact self-powered synchronous energy extraction circuit design with enhanced performance

NASA Astrophysics Data System (ADS)

Liu, Weiqun; Zhao, Caiyou; Badel, Adrien; Formosa, Fabien; Zhu, Qiao; Hu, Guangdi

2018-04-01

Synchronous switching circuit is viewed as an effective solution of enhancing the generator’s performance and providing better adaptability for load variations. A critical issue for these synchronous switching circuits is the self-powered realization. In contrast with other methods, the electronic breaker possesses the advantage of simplicity and reliability. However, beside the energy consumption of the electronic breakers, the parasitic capacitance decreases the available piezoelectric voltage. In this technical note, a new compact design of the self-powered switching circuit using electronic breaker is proposed. The envelope diodes are excluded and only a single envelope capacitor is used. The parasitic capacitance is reduced to half with boosted performance while the components are reduced with cost saved.

ATM encryption testing

NASA Astrophysics Data System (ADS)

Capell, Joyce; Deeth, David

1996-01-01

This paper describes why encryption was selected by Lockheed Martin Missiles & Space as the means for securing ATM networks. The ATM encryption testing program is part of an ATM network trial provided by Pacific Bell under the California Research Education Network (CalREN). The problem being addressed is the threat to data security which results when changing from a packet switched network infrastructure to a circuit switched ATM network backbone. As organizations move to high speed cell-based networks, there is a break down in the traditional security model which is designed to protect packet switched data networks from external attacks. This is due to the fact that most data security firewalls filter IP packets, restricting inbound and outbound protocols, e.g. ftp. ATM networks, based on cell-switching over virtual circuits, does not support this method for restricting access since the protocol information is not carried by each cell. ATM switches set up multiple virtual connections, thus there is no longer a single point of entry into the internal network. The problem is further complicated by the fact that ATM networks support high speed multi-media applications, including real time video and video teleconferencing which are incompatible with packet switched networks. The ability to restrict access to Lockheed Martin networks in support of both unclassified and classified communications is required before ATM network technology can be fully deployed. The Lockheed Martin CalREN ATM testbed provides the opportunity to test ATM encryption prototypes with actual applications to assess the viability of ATM encryption methodologies prior to installing large scale ATM networks. Two prototype ATM encryptors are being tested: (1) `MILKBUSH' a prototype encryptor developed by NSA for transmission of government classified data over ATM networks, and (2) a prototype ATM encryptor developed by Sandia National Labs in New Mexico, for the encryption of proprietary data.

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Danhong; Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106; Gumbs, Godfrey

2015-11-15

For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of two-electron states at low temperatures as the channel becomes wide. In this regime, the Coulomb effect on the two-electron states is calculated and found to lead to four split energy levels, including two anticrossing-level and two crossing-level states. Moreover, due to the interplay of anticrossing and crossing effects, our calculations reveal that the ground two-electron state will switch from one anticrossing state (strong confinement) to a crossing state (intermediate confinement) as the channel width gradually increases andmore » then back to the original anticrossing state (weak confinement) as the channel width becomes larger than a threshold value. This switching behavior leaves a footprint in the ballistic conductance as well as in the diffusion thermoelectric power of electrons. Such a switching is related to the triple spin degeneracy as well as to the Coulomb repulsion in the central region of the channel, which separates two electrons away and pushes them to different channel edges. The conductance reoccurrence region expands from the weak to the intermediate confinement regime with increasing electron density.« less

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic memory switching through phase-change.

Traffic routing in a switched regenerative satellite. Volume 1, task 3: Traffic assignment

NASA Astrophysics Data System (ADS)

1982-12-01

Time plan assignment in a multibeam SS-TDMA is discussed. System features fixed by the designer, such as the number and the speed of ground terminals installed in each station, and the number and the speed of satellite transponders working in each spot are described. Linkage among terminals and transponders is also discussed, including having more than one transponder linked to one terminal. A procedure to achieve a switching plan with high efficiency, taking into account all system constraints such as no bursts breaking and two transmission rates harmonization is proposed. Algorithms to be implemented are: the Hungarian method; branch and bound; the INSERT heuristic; and the HOLE heuristic. Computer programs were developed, and a time plan for a European Satellite System is produced.

Terahertz optoelectronics with surface plasmon polariton diode.

PubMed

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

First Performance Results of the PIP2IT MEBT 200 Ohm Kicker Prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saewert, G.; Awida, M. H.; Chase, B. E.

The PIP-II project is a program to upgrade the Fermilab accelerator complex. The PIP-II linac includes a 2.1 MeV Medium Energy Beam Transport (MEBT) section that incorporates a unique chopping system to perform arbitrary, bunch-by-bunch removal of 162.5 MHz structured beam. The MEBT chopping system will consist of two identical kickers working together and a beam absorber. One design of two having been proposed has been a 200 Ohm characteristic impedance traveling wave dual-helix kicker driven with custom designed high-speed switches. This paper reports on the first performance results of one prototype kicker built, installed and tested with beam at the PIP-II Injector Test (PIP2IT) facility. The helix deflector design details are discussed. The electrical performance of the high-speed switch driver operating at 500 V bias is presented. Tests performed were chopping beam at 81.25 MHz for microseconds as well as with a truly arbitrary pattern for 550more » $$\\mu$$s bursts having a 45 MHz average switching rate and repeating at 20 Hz.« less

Inhibition in task switching: The reliability of the n - 2 repetition cost.

PubMed

Kowalczyk, Agnieszka W; Grange, James A

2017-12-01

The n - 2 repetition cost seen in task switching is the effect of slower response times performing a recently completed task (e.g. an ABA sequence) compared to performing a task that was not recently completed (e.g. a CBA sequence). This cost is thought to reflect cognitive inhibition of task representations and as such, the n - 2 repetition cost has begun to be used as an assessment of individual differences in inhibitory control; however, the reliability of this measure has not been investigated in a systematic manner. The current study addressed this important issue. Seventy-two participants performed three task switching paradigms; participants were also assessed on rumination traits and processing speed-measures of individual differences potentially modulating the n - 2 repetition cost. We found significant n - 2 repetition costs for each paradigm. However, split-half reliability tests revealed that this cost was not reliable at the individual-difference level. Neither rumination tendencies nor processing speed predicted this cost. We conclude that the n - 2 repetition cost is not reliable as a measure of individual differences in inhibitory control.

Transient effects in beam-plasma interactions in a space simulation chamber stimulated by a fast pulse electron gun

NASA Technical Reports Server (NTRS)

Raitt, W. J.; Banks, P. M.; Denig, W. F.; Anderson, H. R.

1982-01-01

Interest in the interaction of electron beams with plasma generated by ionization caused by the primary electron beam was stimulated by the need to develop special vacuum tubes to operate in the kMHz frequency region. The experiments of Getty and Smullin (1963) indicated that the interaction of an energetic electron beam with its self-produced plasma resulted in the emission of wave energy over a wide range of frequencies associated with cyclotron and longitudinal plasma instabilities. This enhanced the thermal plasma density in the vicinity of the beam, and the term Beam-Plasma Discharge (BPD) was employed to described this phenomenon. The present investigation is concerned with some of the transient phenomena associated with wave emission during the beam switch-on and switch-off periods. Results are presented on the changes in electron energy spectra on a time scale of tens of milliseconds following beam switch-on. The results are discussed in terms of the beam plasma discharge phenomenon.

Combining Reaction Time and Accuracy: The Relationship Between Working Memory Capacity and Task Switching as a Case Example.

PubMed

Draheim, Christopher; Hicks, Kenny L; Engle, Randall W

2016-01-01

It is generally agreed upon that the mechanisms underlying task switching heavily depend on working memory, yet numerous studies have failed to show a strong relationship between working memory capacity (WMC) and task-switching ability. We argue that this relationship does indeed exist but that the dependent variable used to measure task switching is problematic. To support our claim, we reanalyzed data from two studies with a new scoring procedure that combines reaction time (RT) and accuracy into a single score. The reanalysis revealed a strong relationship between task switching and WMC that was not present when RT-based switch costs were used as the dependent variable. We discuss the theoretical implications of this finding along with the potential uses and limitations of the scoring procedure we used. More broadly, we emphasize the importance of using measures that incorporate speed and accuracy in other areas of research, particularly in comparisons of subjects differing in cognitive and developmental levels. © The Author(s) 2015.

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Rangra, Kamaljit

2016-10-01

A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold-hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44 μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator©; and an equivalent LCR circuit in advanced design system©;. Insertion loss of the switch lies in -0.1 to -0.5 dB with isolation better than -20 dB for the above-mentioned bandwidth.

Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

NASA Astrophysics Data System (ADS)

Niu, G.; Schubert, M. A.; Sharath, S. U.; Zaumseil, P.; Vogel, S.; Wenger, C.; Hildebrandt, E.; Bhupathi, S.; Perez, E.; Alff, L.; Lehmann, M.; Schroeder, T.; Niermann, T.

2017-05-01

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Switching LPV Control with Double-Layer LPV Model for Aero-Engines

NASA Astrophysics Data System (ADS)

Tang, Lili; Huang, Jinquan; Pan, Muxuan

2017-11-01

To cover the whole range of operating conditions of aero-engine, a double-layer LPV model is built so as to take into account of the variability due to the flight altitude, Mach number and the rotational speed. With this framework, the problem of designing LPV state-feedback robust controller that guarantees desired bounds on both H_∞ and H_2 performances is considered. Besides this, to reduce the conservativeness caused by a single LPV controller of the whole flight envelope and the common Lyapunov function method, a new method is proposed to design a family of LPV switching controllers. The switching LPV controllers can ensure that the closed-loop system remains stable in the sense of Lyapunov under arbitrary switching logic. Meanwhile, the switching LPV controllers can ensure the parameters change smoothly. The validity and performance of the theoretical results are demonstrated through a numerical example.

Method and apparatus for monitoring motor operated valve motor output torque and power at valve seating

DOEpatents

Casada, D.A.

1996-01-16

A method and apparatus are provided for monitoring a motor operated valve during the brief period when the valve seats and the torque switch trips to deenergize the valve motor. The method uses voltage measurements on the load side of a deenergizing switch that opens to deenergize the motor to determine, among other things, final motor rotational speed and the decelerating torque at motor deenergization. 14 figs.

Method and apparatus for monitoring motor operated valve motor output torque and power at valve seating

DOEpatents

Casada, Donald A.

1996-01-01

A method and apparatus are provided for monitoring a motor operated valve during the brief period when the valve seats and the torque switch trips to deenergize the valve motor. The method uses voltage measurements on the load side of a deenergizing switch that opens to deenergize the motor to determine, among other things, final motor rotational speed and the decelerating torque at motor deenergization.

Optimal swim speeds for traversing velocity barriers: An analysis of volitional high-speed swimming behavior of migratory fishes

USGS Publications Warehouse

Castro-Santos, T.

2005-01-01

Migrating fish traversing velocity barriers are often forced to swim at speeds greater than their maximum sustained speed (Ums). Failure to select an appropriate swim speed under these conditions can prevent fish from successfully negotiating otherwise passable barriers. I propose a new model of a distance-maximizing strategy for fishes traversing velocity barriers, derived from the relationships between swim speed and fatigue time in both prolonged and sprint modes. The model predicts that fish will maximize traversed distance by swimming at a constant groundspeed against a range of flow velocities, and this groundspeed is equal to the negative inverse of the slope of the swim speed-fatigue time relationship for each mode. At a predictable flow velocity, they should switch from the optimal groundspeed for prolonged mode to that for sprint mode. Data from six migratory fish species (anadromous clupeids: American shad Alosa sapidissima, alewife A. pseudoharengus and blueback herring A. aestivalis; amphidromous: striped bass Morone saxatilis; and potomodromous species: walleye (previously known as Stizostedion vitrium) and white sucker Catostomus commersonii) were used to explore the ability of fish to approximate the predicted distance-maximizing behaviors, as well as the consequences of deviating from the optima. Fish volitionally sprinted up an open-channel flume against fixed flow velocities of 1.5-4.5 m s-1, providing data on swim speeds and fatigue times, as well as their groundspeeds. Only anadromous clupeids selected the appropriate distance-maximizing groundspeed at both prolonged and sprint modes. The other three species maintained groundspeeds appropriate to the prolonged mode, even when they should have switched to the sprint optima. Because of this, these species failed to maximize distance of ascent. The observed behavioral variability has important implications both for distributional limits and fishway design.

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

NASA Astrophysics Data System (ADS)

Svetin, Damjan; Vaskivskyi, Igor; Brazovskii, Serguei; Mihailovic, Dragan

2017-04-01

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥ and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

Solvation and Evolution Dynamics of an Excess Electron in Supercritical CO2

NASA Astrophysics Data System (ADS)

Wang, Zhiping; Liu, Jinxiang; Zhang, Meng; Cukier, Robert I.; Bu, Yuxiang

2012-05-01

We present an ab initio molecular dynamics simulation of the dynamics of an excess electron solvated in supercritical CO2. The excess electron can exist in three types of states: CO2-core localized, dual-core localized, and diffuse states. All these states undergo continuous state conversions via a combination of long lasting breathing oscillations and core switching, as also characterized by highly cooperative oscillations of the excess electron volume and vertical detachment energy. All of these oscillations exhibit a strong correlation with the electron-impacted bending vibration of the core CO2, and the core-switching is controlled by thermal fluctuations.

Concept and design of a beam blanker with integrated photoconductive switch for ultrafast electron microscopy.

PubMed

Weppelman, I G C; Moerland, R J; Hoogenboom, J P; Kruit, P

2018-01-01

We present a new method to create ultrashort electron pulses by integrating a photoconductive switch with an electrostatic deflector. This paper discusses the feasibility of such a system by analytical and numerical calculations. We argue that ultrafast electron pulses can be achieved for micrometer scale dimensions of the blanker, which are feasible with MEMS-based fabrication technology. According to basic models, the design presented in this paper is capable of generating 100 fs electron pulses with spatial resolutions of less than 10 nm. Our concept for an ultrafast beam blanker (UFB) may provide an attractive alternative to perform ultrafast electron microscopy, as it does not require modification of the microscope nor realignment between DC and pulsed mode of operation. Moreover, only low laser pulse energies are required. Due to its small dimensions the UFB can be inserted in the beam line of a commercial microscope via standard entry ports for blankers or variable apertures. The use of a photoconductive switch ensures minimal jitter between laser and electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Relaxation Method for Navier-Stokes Equation

NASA Astrophysics Data System (ADS)

de Oliveira, P. M. C.

2012-04-01

The motivation for this work was a simple experiment [P. M. C. de Oliveira, S. Moss de Oliveira, F. A. Pereira and J. C. Sartorelli, preprint (2010), arXiv:1005.4086], where a little polystyrene ball is released falling in air. The interesting observation is a speed breaking. After an initial nearly linear time-dependence, the ball speed reaches a maximum value. After this, the speed finally decreases until its final, limit value. The provided explanation is related to the so-called von Kármán street of vortices successively formed behind the falling ball. After completely formed, the whole street extends for some hundred diameters. However, before a certain transient time needed to reach this steady-state, the street is shorter and the drag force is relatively reduced. Thus, at the beginning of the fall, a small and light ball may reach a speed superior to the sustainable steady-state value. Besides the real experiment, the numerical simulation of a related theoretical problem is also performed. A cylinder (instead of a 3D ball, thus reducing the effective dimension to 2) is positioned at rest inside a wind tunnel initially switched off. Suddenly, at t = 0 it is switched on with a constant and uniform wind velocity ěc{V} far from the cylinder and perpendicular to it. This is the first boundary condition. The second is the cylinder surface, where the wind velocity is null. In between these two boundaries, the velocity field is determined by solving the Navier-Stokes equation, as a function of time. For that, the initial condition is taken as the known Stokes laminar limit V → 0, since initially the tunnel is switched off. The numerical method adopted in this task is the object of the current text.

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

NASA Astrophysics Data System (ADS)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could be the basis for a new type of electrically pumped mid - to far-infrared semiconductor laser.

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

NASA. Lewis Research Center Advanced Modulation and Coding Project: Introduction and overview

NASA Technical Reports Server (NTRS)

Budinger, James M.

1992-01-01

The Advanced Modulation and Coding Project at LeRC is sponsored by the Office of Space Science and Applications, Communications Division, Code EC, at NASA Headquarters and conducted by the Digital Systems Technology Branch of the Space Electronics Division. Advanced Modulation and Coding is one of three focused technology development projects within the branch's overall Processing and Switching Program. The program consists of industry contracts for developing proof-of-concept (POC) and demonstration model hardware, university grants for analyzing advanced techniques, and in-house integration and testing of performance verification and systems evaluation. The Advanced Modulation and Coding Project is broken into five elements: (1) bandwidth- and power-efficient modems; (2) high-speed codecs; (3) digital modems; (4) multichannel demodulators; and (5) very high-data-rate modems. At least one contract and one grant were awarded for each element.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.

PubMed

Zhou, Li; Mao, Jingyu; Ren, Yi; Han, Su-Ting; Roy, Vellaisamy A L; Zhou, Ye

2018-03-01

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of multi-pixel x-ray source using oxide-coated cathodes.

PubMed

Kandlakunta, Praneeth; Pham, Richard; Khan, Rao; Zhang, Tiezhi

2017-07-07

Multiple pixel x-ray sources facilitate new designs of imaging modalities that may result in faster imaging speed, improved image quality, and more compact geometry. We are developing a high-brightness multiple-pixel thermionic emission x-ray (MPTEX) source based on oxide-coated cathodes. Oxide cathodes have high emission efficiency and, thereby, produce high emission current density at low temperature when compared to traditional tungsten filaments. Indirectly heated micro-rectangular oxide cathodes were developed using carbonates, which were converted to semiconductor oxides of barium, strontium, and calcium after activation. Each cathode produces a focal spot on an elongated fixed anode. The x-ray beam ON and OFF control is performed by source-switching electronics, which supplies bias voltage to the cathode emitters. In this paper, we report the initial performance of the oxide-coated cathodes and the MPTEX source.

A single electron nanomechanical Y-switch.

PubMed

Kim, Chulki; Kim, Hyun-Seok; Prada, Marta; Blick, Robert H

2014-08-07

We demonstrate current switching in the frequency domain using a nanomechanical shuttle with three terminals operating at room temperature. The shuttle consists of a metallic island on top of a Si nanopillar forming the Y-junction. A flexural mode of the nanopillar is excited by applying an external bias to one of the contacts, allowing electrons to be shuttled across the oscillating island.

67. Building 102, view of electronic switching amplifier (in retracted ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

67. Building 102, view of electronic switching amplifier (in retracted or open position) with video monitor mounted at top to monitor performance and condition of system in oil bath. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

Suitable Stimuli to Obtain (No) Gender Differences in the Speed of Cognitive Processes Involved in Mental Rotation

ERIC Educational Resources Information Center

Jansen-Osmann, Petra; Heil, Martin

2007-01-01

Gender differences in speed of perceptual comparison, of picture-plane mental rotation, and in switching costs between trials that do and do not require mental rotation, were investigated as a function of stimulus material with a total sample size of N=360. Alphanumeric characters, PMA symbols, animal drawings, polygons and 3D cube figures were…

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, P.J.; Tucker, T.J.

1987-07-14

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

Preliminary Experiments with a Unified Controller for a Powered Knee-Ankle Prosthetic Leg Across Walking Speeds

PubMed Central

Villarreal, Dario J.; Gregg, Robert D.

2016-01-01

This paper presents the experimental validation of a novel control strategy that unifies the entire gait cycle of a powered knee-ankle prosthetic leg without the need to switch between controllers for different periods of gait. Current control methods divide the gait cycle into several sequential periods each with independent controllers, resulting in many patient-specific control parameters and switching rules that must be tuned for a specific walking speed. The single controller presented is speed-invariant with a minimal number of control parameters to be tuned. A single, periodic virtual constraint is derived that exactly characterizes the desired actuated joint motion as a function of a mechanical phase variable across walking cycles. A single sensor was used to compute a phase variable related to the residual thigh angle’s phase plane, which was recently shown to robustly represent the phase of non-steady human gait. This phase variable allows the prosthesis to synchronize naturally with the human user for intuitive, biomimetic behavior. A custom powered knee-ankle prosthesis was designed and built to implement the control strategy and validate its performance. A human subject experiment was conducted across multiple walking speeds (1 to 3 miles/hour) in a continuous sequence with the single phase-based controller, demonstrating its adaptability to the user’s intended speed. PMID:28392969

Logic computation in phase change materials by threshold and memory switching.

PubMed

Cassinerio, M; Ciocchini, N; Ielmini, D

2013-11-06

Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel single-phase flux-switching permanent magnet linear generator used for free-piston Stirling engine

NASA Astrophysics Data System (ADS)

Zheng, Ping; Sui, Yi; Tong, Chengde; Bai, Jingang; Yu, Bin; Lin, Fei

2014-05-01

This paper investigates a novel single-phase flux-switching permanent-magnet (PM) linear machine used for free-piston Stirling engines. The machine topology and operating principle are studied. A flux-switching PM linear machine is designed based on the quasi-sinusoidal speed characteristic of the resonant piston. Considering the performance of back electromotive force and thrust capability, some leading structural parameters, including the air gap length, the PM thickness, the ratio of the outer radius of mover to that of stator, the mover tooth width, the stator tooth width, etc., are optimized by finite element analysis. Compared with conventional three-phase moving-magnet linear machine, the proposed single-phase flux-switching topology shows advantages in less PM use, lighter mover, and higher volume power density.

Ultrafast optical switching in three-dimensional photonic crystals

NASA Astrophysics Data System (ADS)

Mazurenko, D. A.

2004-09-01

The rapidly expanding research on photonic crystals is driven by potential applications in all-optical switches, optical computers, low-threshold lasers, and holographic data storage. The performance of such devices might surpass the speed of traditional electronics by several orders of magnitude and may result in a true revolution in nanotechnology. The heart of such devices would likely be an optical switching element. This thesis analyzes different regimes of ultrafast all-optical switching in various three-dimensional photonic crystals, in particular opals filled with silicon or vanadium dioxide and periodic arrays of silica-gold core-shell spherical particles with silica outer shell. In the experiment an ultrashort optical pulse is used to excite a photonic crystal and change its complex effective dielectric constant. The change in the imaginary part of the dielectric constant corresponds to the change in absorption that suppresses interference inside the photonic crystal and modifies the amplitude of the reflectivity, while the change in the real part of the dielectric constant accounts for a shift in a spectral position of the photonic stop band. The first type of switching is shown on an example of an opal filled with silicon. In this crystal, switching is induced by photo-excited carriers in silicon that act as an electron plasma and increase the absorption in silicon. Within 30 fs constructive interference inside the opal vanishes and Bragg reflectivity drops down. Changes in reflectivity reach values as high as 46% at maximum excitation power. The experimental results are in a good agreement with calculations. The second type of switching is demonstrated in opal filled with vanadium dioxide. Here, the optical switching is driven by a photoinduced phase transition of vanadium dioxide. The phase transition takes place on a subpicosecond time scale and changes the effective dielectric constant of the opal. As a result, the spectral position of the photonic stop band shifts to the blue leading to large (up to 35%) changes in the reflectivity. Metallo-dielectric photonic crystals give even more possibilities for the band-tuning, since in addition to the resonance for light they posses surface plasmon resonances. The interplay of these resonances leads to unusual optical phenomena. As an example, reflected light produces an unexpected beaming in the apexes of a hexagon with a divergence angle of 8°, in our sample. This angle is too small to be attributed to a simple diffraction on the periodic lattice of core-shells but can be explained by interference between surface plasmons and propagating surface waves. Time-resolved spectra demonstrate rapid changes immediately after the arrival of the pump pulse. Ultrafast reflection changes are dramatically enhanced by the plasmon resonances, and can reach values as high as 35%. A completely different mechanism for ultrafast switching is explored, based on the excitation of coherent acoustic radial vibrations of the gold spheres. This results in a 4% modulation of the reflectivity on a subnanosecond timescale. The observed oscillation properties of our gold-shell spheres are in excellent agreement with the calculations. The described results show that the demonstrated dynamical changes in the reflectivity of a three-dimensional photonic crystal can be made both large and ultrafast and therefore may prove to be relevant for future applications.

Flexible-rate optical packet generation/detection and label swapping for optical label switching networks

NASA Astrophysics Data System (ADS)

Wu, Zhongying; Li, Juhao; Tian, Yu; Ge, Dawei; Zhu, Paikun; Chen, Yuanxiang; Chen, Zhangyuan; He, Yongqi

2017-03-01

In recent years, optical label switching (OLS) gains lots of attentions due to its intrinsic advantages to implement protocol, bit-rate, granularity and data format transparency packet switching. In this paper, we propose a novel scheme to realize flexible-rate optical packet switching for OLS networks. At the transmitter node, flexible-rate packet is generated by parallel modulating different combinations of optical carriers generated from the optical multi-carrier generator (OMCG), among which the low-speed optical label occupies one carrier. At the switching node, label is extracted and re-generated in label processing unit (LPU). The payloads are switched based on routing information and new label is added after switching. At the receiver node, another OMCG serves as local oscillators (LOs) for optical payloads coherent detection. The proposed scheme offers good flexibility for dynamic optical packet switching by adjusting the payload bandwidth and could also effectively reduce the number of lasers, modulators and receivers for packet generation/detection. We present proof-of-concept demonstrations of flexible-rate packet generation/detection and label swapping in 12.5 GHz grid. The influence of crosstalk for cascaded label swapping is also investigated.

Performance, operational limits, of an Electronic Switching Spherical Array (ESSA) antenna

NASA Technical Reports Server (NTRS)

Stockton, R.

1979-01-01

The development of a microprocessor controller which provides multimode operational capability for the Electronic Switching Spherical Array (ESSA) Antenna is described. The best set of operating conditions were determined and the performance of an ESSA antenna was demonstrated in the following modes: (1) omni; (2) acquisition/track; (3) directive; and (4) multibeam. The control algorithms, software flow diagrams, and electronic circuitry were developed. The microprocessor and control electronics were built and interfaced with the antenna to carry out performance testing. The acquisition/track mode for users in the Tracking and Data Relay Satellite System is emphasized.

The modeling of an automotive electronic control system and the application of optimizing methods

NASA Astrophysics Data System (ADS)

Zhang, Yansheng; Yang, Zhigang; Zhang, Xiang

2005-12-01

Now, MATLAB/SIMULINK software is popularly used by automotive electronic control designers to develop automotive electronic control systems and perform numerical simulations. But they will face problems, such as value initialization in the "integrator" block, conversion among different data types, selection of "if" block and "switch" block, realization of the "if-clause" under multiple options and the auto-switching control, etc. Taking as an example the designing of an Automated Mechanical Transmission (AMT) system, this paper discusses some techniques and methods for modeling the automotive electronic control system with MATLAB/SIMULINK, offering designers some successful examples.

Design of materials configurations for enhanced phononic and electronic properties

NASA Astrophysics Data System (ADS)

Daraio, Chiara

The discovery of novel nonlinear dynamic and electronic phenomena is presented for the specific cases of granular materials and carbon nanotubes. This research was conducted for designing and constructing optimized macro-, micro- and nano-scale structural configurations of materials, and for studying their phononic and electronic behavior. Variation of composite arrangements of granular elements with different elastic properties in a linear chain-of-sphere, Y-junction or 3-D configurations led to a variety of novel phononic phenomena and interesting physical properties, which can be potentially useful for security, communications, mechanical and biomedical engineering applications. Mechanical and electronic properties of carbon nanotubes with different atomic arrangements and microstructures were also investigated. Electronic properties of Y-junction configured carbon nanotubes exhibit an exciting transistor switch behavior which is not seen in linear configuration nanotubes. Strongly nonlinear materials were designed and fabricated using novel and innovative concepts. Due to their unique strongly nonlinear and anisotropic nature, novel wave phenomena have been discovered. Specifically, violations of Snell's law were detected and a new mechanism of wave interaction with interfaces between NTPCs (Nonlinear Tunable Phononic Crystals) was established. Polymer-based systems were tested for the first time, and the tunability of the solitary waves speed was demonstrated. New materials with transformed signal propagation speed in the manageable range of 10-100 m/s and signal amplitude typical for audible speech have been developed. The enhancing of the mitigation of solitary and shock waves in 1-D chains were demonstrated and a new protective medium was designed for practical applications. 1-D, 2-D and 3-D strongly nonlinear system have been investigated providing a broad impact on the whole area of strongly nonlinear wave dynamics and creating experimental basis for new theories and models. Potential applications include (1) designing of a sound scrambler/decoder for secure voice communications, (2) improving invisibility of submarine to acoustic detection signal, (3) noise and shock wave mitigation for protection of vibration sensitive devices such as head mounted vision devices, (4) drastic compression of acoustic signals into centimeter regime impulses for artificial ear implants, hearing aid and devices for ease of conversion to electronic signals and processing, and acoustic delay lines for communication applications.

Electromagnetic liquid pistons for capillarity-based pumping.

PubMed

Malouin, Bernard A; Vogel, Michael J; Olles, Joseph D; Cheng, Lili; Hirsa, Amir H

2011-02-07

The small scales associated with lab-on-a-chip technologies lend themselves well to capillarity-dominated phenomena. We demonstrate a new capillarity-dominated system where two adjoining ferrofluid droplets can behave as an electronically-controlled oscillator or switch by an appropriate balance of magnetic, capillary, and inertial forces. Their oscillatory motion can be exploited to displace a surrounding liquid (akin to an axial piston pump), forming electromagnetic "liquid pistons." Such ferrofluid pistons can pump a precise volume of liquid via finely tunable amplitudes (cf. pump stroke) or resonant frequencies (cf. pump speed) with no solid moving parts for long-term operation without wear in a small device. Furthermore, the rapid propagation of electromagnetic fields and the favorable scaling of capillary forces with size permit micron sized devices with very fast operating speeds (∼kHz). The pumping dynamics and performance of these liquid pistons is explored, with experimental measurements showing good agreement with a spherical cap model. While these liquid pistons may find numerous applications in micro- and mesoscale fluidic devices (e.g., remotely activated drug delivery), here we demonstrate the use of these liquid pistons in capillarity-dominated systems for chip-level, fast-acting adaptive liquid lenses with nearly perfect spherical interfaces.

NRAM: a disruptive carbon-nanotube resistance-change memory.

PubMed

Gilmer, D C; Rueckes, T; Cleveland, L

2018-04-03

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

NRAM: a disruptive carbon-nanotube resistance-change memory

NASA Astrophysics Data System (ADS)

Gilmer, D. C.; Rueckes, T.; Cleveland, L.

2018-04-01

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

Magnetically Delayed Low-Pressure Gas Discharge Switching

DTIC Science & Technology

1993-06-01

the gap, minimizes this effect. It is this version of the low- pressure switch that we are presently studying. Our magnetically delayed low... pressure switch (MDLPS) test-stand was built primarily to support the long-pulse, relativistic klystron (RK) and free electron laser (FEL) work at... pressure switch and compared the performance with and without the saturable inductor. A comparison of typi- cal closure properties is shown in Fig

Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering

DTIC Science & Technology

2016-09-01

Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy...Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy Sensors and Electron Devices...08/2016 4. TITLE AND SUBTITLE Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering 5a

A Study of the IEEE 802.16 MAC Layer and its Utility in Augmenting the ADNS Architecture to Provide Adaptable Intra-Strike Group High-Speed Packet Switched Data, Imagery, and Voice Communications

DTIC Science & Technology

2005-09-01

This research explores the need for a high throughput, high speed network for use in a network centric wartime environment and how commercial...Automated Digital Network System (ADNS). This research explores the need for a high-throughput, high-speed network for use in a network centric ...1 C. DEPARTMENT OF DEFENSE (DOD) DESIRED END STATE ..............2 1. DOD Transformation to Network Centric Warfare (NCW) Operations

Controllable High-Speed Rotation of Nanowires

NASA Astrophysics Data System (ADS)

Fan, D. L.; Zhu, F. Q.; Cammarata, R. C.; Chien, C. L.

2005-06-01

We report a versatile method for executing controllable high-speed rotation of nanowires by ac voltages applied to multiple electrodes. The rotation of the nanowires can be instantly switched on or off with precisely controlled rotation speed (to at least 1800 rpm), definite chirality, and total angle of rotation. We have determined the torque due to the fluidic drag force on nanowire of different lengths. We also demonstrate a micromotor using a rotating nanowire driving a dust particle into circular motion. This method has been used to rotate magnetic and nonmagnetic nanowires as well as carbon nanotubes.

XUNET experimental high-speed network testbed CRADA 1136, DOE TTI No. 92-MULT-020-B2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, R.E.

1996-04-01

XUNET is a research program with AT&T and other partners to study high-speed wide area communication between local area networks over a backbone using Asynchronous Transfer Mode (ATM) switches. Important goals of the project are to develop software techniques for network control and management, and applications for high-speed networks. The project entails building a testbed between member sites to explore performance issues for mixed network traffic such as congestion control, multimedia communications protocols, segmentation and reassembly of ATM cells, and overall data throughput rates.

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect.

PubMed

Yüce, Emre; Ctistis, Georgios; Claudon, Julien; Gérard, Jean-Michel; Vos, Willem L

2016-01-11

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond when the nanostructure is pumped with low-energy photons. We investigate experimentally and theoretically the role of several parameters: the material backbone and its electronic bandgap, the quality factor, and the duration of the switch pulse. The magnitude of the frequency shift is reduced when the backbone of the central λ-layer has a greater electronic bandgap compared to the cavity resonance frequency and the frequency of the pump. This observation is caused by the fact that pumping with photon energies near the bandgap resonantly enhances the switched magnitude. We thus find that cavities operating in the telecom O-band are more amenable to ultrafast Kerr switching than those operating at lower frequencies, such as the C-band. Our results indicate that the large bandgap of AlGaAs/AlAs cavity allows to tune both the pump and the probe to the telecom range to perform Kerr switching without detrimental two-photon absorption. We observe that the magnitude of the resonance frequency shift decreases with increasing quality factor of the cavity. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time to within a factor two. In our experiments, we obtain a maximum shift of the cavity resonance relative to the cavity linewidth of 20%. We project that the shift of the cavity resonance can be increased twofold with a pump pulse duration that better matches the cavity storage time. We provide the essential parameter settings for different materials so that the frequency shift of the cavity resonance can be maximized using the electronic Kerr effect.

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

DOEpatents

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

High power RF coaxial switch

NASA Technical Reports Server (NTRS)

Caro, E. R. (Inventor)

1980-01-01

A coaxial switch capable of operating in a vacuum with high RF power in the 1.2 GHz range without multipactor breakdown, and without relying on pressurization with an inert gas is described. The RF carrying conductors of the switch are surrounded with a high grade solid dielectric, thus eliminating any gaps in which electrons can accelerate.