Tunnel based spin injection devices for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides insight into spin relaxation mechanisms within the semiconductor heterostructure.

Efficient spin-current injection in single-molecule magnet junctions

NASA Astrophysics Data System (ADS)

Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

2018-01-01

We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

NASA Astrophysics Data System (ADS)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin-polarized contacts, a crucial requirement enabling future semiconductor spintronic devices, which rely upon two-terminal magnetoresistance, including spin-based transistors, logic and memory.

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

PubMed Central

Park, Tae-Eon; Park, Youn Ho; Lee, Jong-Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung-Chul; Kim, Hyung-jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon

2017-01-01

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems. PMID:28569767

Spin accumulation in permalloy-ZnO heterostructures from both electrical injection and spin pumping

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Yumeng; Wang, Ying; Luo, Ziyan; Xie, Hang; Wu, Yihong

2017-11-01

We report the results of room temperature spin injection and detection studies in ZnO using both electrical injection and spin pumping. At ferromagnetic resonance, an interfacial voltage with a constant polarity upon magnetization reversal is observed in permalloy-ZnO heterostructures, which is attributed to spin accumulation after ruling out other origins. Simultaneous electrical injection during spin pumping is achieved in samples with large interface resistance or insertion of a thin MgO layer at the interface of permalloy and ZnO. From the pumping frequency dependence of detected voltage, a spin lifetime of 32 ps is extracted for ZnO at room temperature, despite the fact that there was no Hanle effect observed in the same device using the conventional three-terminal DC measurement.

Spintronics: spin accumulation in mesoscopic systems.

PubMed

Johnson, Mark

2002-04-25

In spintronics, in which use is made of the spin degree of freedom of the electron, issues concerning electrical spin injection and detection of electron spin diffusion are fundamentally important. Jedema et al. describe a magneto-resistance study in which they claim to have observed spin accumulation in a mesoscopic copper wire, but their one-dimensional model ignores two-dimensional spin-diffusion effects, which casts doubt on their analysis. A two-dimensional vector formalism of spin transport is called for to model spin-injection experiments, and the identification of spurious background resistance effects is crucial.

Spin injection and transport in semiconductor and metal nanostructures

NASA Astrophysics Data System (ADS)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes directly to the realization of spin valve and spin transistor devices based on III-V semiconductors, and offers new opportunities to engineer the behavior of spintronic devices at the nanoscale.

Non-local electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

Spin injection devices with high mobility 2DEG channels (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ciorga, Mariusz; Oltscher, Martin; Kuczmik, Thomas; Loher, Josef; Bayer, Andreas; Schuh, Dieter; Bougeard, Dominique; Weiss, Dieter

2016-10-01

Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of 20% measured in local configuration, i.e., with spin-polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)

Memory and Spin Injection Devices Involving Half Metals

DOE PAGES

Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

2011-01-01

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

Investigation of charge injection and transport behavior in multilayer structure consisted of ferromagnetic metal and organic polymer under external fields

NASA Astrophysics Data System (ADS)

Zhao, Hua; Meng, Wei-Feng

2017-10-01

In this paper a five layer organic electronic device with alternately placed ferromagnetic metals and organic polymers: ferromagnetic metal/organic layer/ferromagnetic metal/organic layer/ferromagnetic metal, which is injected a spin-polarized electron from outsides, is studied theoretically using one-dimensional tight binding model Hamiltonian. We calculated equilibrium state behavior after an electron with spin is injected into the organic layer of this structure, charge density distribution and spin polarization density distribution of this injected spin-polarized electron, and mainly studied possible transport behavior of the injected spin polarized electron in this multilayer structure under different external electric fields. We analyze the physical process of the injected electron in this multilayer system. It is found by our calculation that the injected spin polarized electron exists as an electron-polaron state with spin polarization in the organic layer and it can pass through the middle ferromagnetic layer from the right-hand organic layer to the left-hand organic layer by the action of increasing external electric fields, which indicates that this structure may be used as a possible spin-polarized charge electronic device and also may provide a theoretical base for the organic electronic devices and it is also found that in the boundaries between the ferromagnetic layer and the organic layer there exist induced interface local dipoles due to the external electric fields.

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

NASA Astrophysics Data System (ADS)

Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

2017-12-01

We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

Highly Efficient Room Temperature Spin Injection Using Spin Filtering in MgO

NASA Astrophysics Data System (ADS)

Jiang, Xin

2007-03-01

Efficient electrical spin injection into GaAs/AlGaAs quantum well structures was demonstrated using CoFe/MgO tunnel spin injectors at room temperature. The spin polarization of the injected electron current was inferred from the circular polarization of electroluminescence from the quantum well. Polarization values as high as 57% at 100 K and 47% at 290 K were obtained in a perpendicular magnetic field of 5 Tesla. The interface between the tunnel spin injector and the GaAs interface remained stable even after thermal annealing at 400 ^oC. The temperature dependence of the electron-hole recombination time and the electron spin relaxation time in the quantum well was measured using time-resolved optical techniques. By taking into account of these properties of the quantum well, the intrinsic spin injection efficiency can be deduced. We conclude that the efficiency of spin injection from a CoFe/MgO spin injector is nearly independent of temperature and, moreover, is highly efficient with an efficiency of ˜ 70% for the temperature range studied (10 K to room temperature). Tunnel spin injectors are thus highly promising components of future semiconductor spintronic devices. Collaborators: Roger Wang^1, 3, Gian Salis^2, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^3, Glenn Solomon^3, James Harris^3, Stuart S. P. Parkin^1 ^1 IBM Almaden Research Center, San Jose, CA 95120 ^2 IBM Zurich Research Laboratory, S"aumerstrasse 4, 8803 R"uschlikon, Switzerland ^3 Solid States and Photonics Laboratory, Stanford University, Stanford, CA 94305

Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence.

PubMed

Tao, Bingshan; Barate, Philippe; Devaux, Xavier; Renucci, Pierre; Frougier, Julien; Djeffal, Abdelhak; Liang, Shiheng; Xu, Bo; Hehn, Michel; Jaffrès, Henri; George, Jean-Marie; Marie, Xavier; Mangin, Stéphane; Han, Xiufeng; Wang, Zhanguo; Lu, Yuan

2018-05-31

Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent PC under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.

Spin injection and detection in lateral spin valves with hybrid interfaces

NASA Astrophysics Data System (ADS)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Spin injection and spin transport in paramagnetic insulators

DOE PAGES

Okamoto, Satoshi

2016-02-22

We investigate the spin injection and the spin transport in paramagnetic insulators described by simple Heisenberg interactions using auxiliary particle methods. Some of these methods allow access to both paramagnetic states above magnetic transition temperatures and magnetic states at low temperatures. It is predicted that the spin injection at an interface with a normal metal is rather insensitive to temperatures above the magnetic transition temperature. On the other hand below the transition temperature, it decreases monotonically and disappears at zero temperature. We also analyze the bulk spin conductance. We show that the conductance becomes zero at zero temperature as predictedmore » by linear spin wave theory but increases with temperature and is maximized around the magnetic transition temperature. These findings suggest that the compromise between the two effects determines the optimal temperature for spintronics applications utilizing magnetic insulators.« less

Magneto-optical studies of quantum dots

NASA Astrophysics Data System (ADS)

Russ, Andreas Hans

Significant effort in condensed matter physics has recently been devoted to the field of "spintronics" which seeks to utilize the spin degree of freedom of electrons. Unlike conventional electronics that rely on the electron charge, devices exploiting their spin have the potential to yield new and novel technological applications, including spin transistors, spin filters, and spin-based memory devices. Any such application has the following essential requirements: 1) Efficient electrical injection of spin-polarized carriers; 2) Long spin lifetimes; 3) Ability to control and manipulate electron spins; 4) Effective detection of spin-polarized carriers. Recent work has demonstrated efficient electrical injection from ferromagnetic contacts such as Fe and MnAs, utilizing a spin-Light Emitting Diode (spin-LED) as a method of detection. Semiconductor quantum dots (QDs) are attractive candidates for satisfying requirements 2 and 3 as their zero dimensionality significantly suppresses many spin-flip mechanisms leading to long spin coherence times, as well as enabling the localization and manipulation of a controlled number of electrons and holes. This thesis is composed of three projects that are all based on the optical properties of QD structures including: I) Intershell exchange between spin-polarized electrons occupying adjacent shells in InAs QDs; II) Spin-polarized multiexitons in InAs QDs in the presence of spin-orbit interactions; III) The optical Aharonov-Bohm effect in AlxGa1-xAs/AlyGa1-yAs quantum wells (QWs). In the following we introduce some of the basic optical properties of quantum dots, describe the main tool (spin-LED) employed in this thesis to inject and detect spins in these QDs, and conclude with the optical Aharonov-Bohm effect (OAB) in type-II QDs.

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6

PubMed Central

Song, Qi; Mi, Jian; Zhao, Dan; Su, Tang; Yuan, Wei; Xing, Wenyu; Chen, Yangyang; Wang, Tianyu; Wu, Tao; Chen, Xian Hui; Xie, X. C.; Zhang, Chi; Shi, Jing; Han, Wei

2016-01-01

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6. PMID:27834378

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB 6

DOE PAGES

Song, Qi; Mi, Jian; Zhao, Dan; ...

2016-11-11

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observemore » the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB 6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Moreover, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6.« less

Inverse spin Hall effect by spin injection

NASA Astrophysics Data System (ADS)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

PubMed

Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

2018-04-24

Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

PubMed Central

Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

2014-01-01

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

Room-Temperature Spin Polariton Diode Laser

NASA Astrophysics Data System (ADS)

Bhattacharya, Aniruddha; Baten, Md Zunaid; Iorsh, Ivan; Frost, Thomas; Kavokin, Alexey; Bhattacharya, Pallab

2017-08-01

A spin-polarized laser offers inherent control of the output circular polarization. We have investigated the output polarization characteristics of a bulk GaN-based microcavity polariton diode laser at room temperature with electrical injection of spin-polarized electrons via a FeCo /MgO spin injector. Polariton laser operation with a spin-polarized current is characterized by a threshold of ˜69 A / cm2 in the light-current characteristics, a significant reduction of the electroluminescence linewidth and blueshift of the emission peak. A degree of output circular polarization of ˜25 % is recorded under remanent magnetization. A second threshold, due to conventional photon lasing, is observed at an injection of ˜7.2 kA /cm2 . The variation of output circular and linear polarization with spin-polarized injection current has been analyzed with the carrier and exciton rate equations and the Gross-Pitaevskii equations for the condensate and there is good agreement between measured and calculated data.

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure.

PubMed

Yu, Jiadong; Wang, Lai; Di Yang; Zheng, Jiyuan; Xing, Yuchen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-10-19

The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (~49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source.

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Non-equilibrium tunneling in zigzag graphene nanoribbon break-junction results in spin filtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010; National ICT Australia, The University of Melbourne, Parkville 3010

Spintronic devices promise new faster and lower energy-consumption electronic systems. Graphene, a versatile material and candidate for next generation electronics, is known to possess interesting spintronic properties. In this paper, by utilizing density functional theory and non-equilibrium green function formalism, we show that Fano resonance can be generated by introducing a break junction in a zigzag graphene nanoribbon (ZGNR). Using this effect, we propose a new spin filtering device that can be used for spin injection. Our theoretical results indicate that the proposed device could achieve high spin filtering efficiency (over 90%) at practical fabrication geometries. Furthermore, our results indicatemore » that the ZGNR break junction lattice configuration can dramatically affect spin filtering efficiency and thus needs to be considered when fabricating real devices. Our device can be fabricated on top of spin transport channel and provides good integration between spin injection and spin transport.« less

Oxide materials for spintronic device applications

NASA Astrophysics Data System (ADS)

Prestgard, Megan Campbell

Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for device-based applications. This dissertation presents experimental results on the use of oxides for fulfilling the three spintronic device requirements. In the case of spin injection, the study of dilute magnetic dielectrics (DMDs) shows the importance of doping on the magnetic properties of the resulting tunnel barriers. The study of spin transport in ZnO has shown that, even at room temperature, the spin diffusion length is relatively long, on the order of 100 nm. These studies have also probed the spin relaxation mechanics in ZnO and have shown that Dyakonov-Perel spin relaxation, operating according to Fermi-Dirac statistics, is the dominant spin relaxation mechanism in zinc oxide. Finally, spin detection in ZnO has shown that, similar to other semiconductors, by modifying the resistivity of the ZnO thin films, the spin Hall angle (SHA) can be enhanced to nearly that of metals. This is possible by enhancing extrinsic SOC due to skew-scattering from impurities as well as phonons. In addition, thermal spin injection has also been detected using ZnO, which results support the independently measured inverse spin-Hall effect studies. The work represented herein illustrates that oxide materials have the potential to enhance spintronic device potential in all processes pertinent to spintronic applications.

Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

NASA Astrophysics Data System (ADS)

Viglin, N. A.; Ustinov, V. V.; Demokritov, S. O.; Shorikov, A. O.; Bebenin, N. G.; Tsvelikhovskaya, V. M.; Pavlov, T. N.; Patrakov, E. I.

2017-12-01

Electric injection and detection of spin-polarized electrons in InSb semiconductors have been realized in nonlocal experimental geometry using an InSb-based "lateral spin valve." The valve of the InSb /MgO /C o0.9F e0.1 composition has semiconductor/insulator/ferromagnet nanoheterojunctions in which the thickness of the InSb layer considerably exceeded the spin diffusion length of conduction electrons. The spin direction in spin diffusion current has been manipulated by a magnetic field under the Hanle effect conditions. The spin polarization of the electron gas has been registered using ferromagnetic C o0.9F e0.1 probes by measuring electrical potentials arising in the probes in accordance with the Johnson-Silsbee concept of the spin-charge coupling. The developed theory is valid at any degree of degeneracy of electron gas in a semiconductor. The spin relaxation time and spin diffusion length of conduction electrons in InSb have been determined, and the electron-spin polarization in InSb has been evaluated for electrons injected from C o0.9F e0.1 through an MgO tunnel barrier.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Spectral linewidth of spin-current nano-oscillators driven by nonlocal spin injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demidov, V. E., E-mail: demidov@uni-muenster.de; Divinskiy, B.; Urazhdin, S.

2015-11-16

We study experimentally the auto-oscillation characteristics of magnetic nano-oscillators driven by pure spin currents generated by nonlocal spin injection. By combining micro-focus Brillouin light scattering spectroscopy with electronic microwave spectroscopy, we are able to simultaneously perform both the spatial and the high-resolution spectral analyses of auto-oscillations induced by spin current. We find that the devices exhibit a highly coherent dynamics with the spectral linewidth of a few megahertz at room temperature. This narrow linewidth can be achieved over a wide range of operational frequencies, demonstrating a significant potential of nonlocal oscillators for applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S. L., E-mail: shuch@ist.hokudai.ac.jp; Takayama, J.; Murayama, A.

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In{sub 0.1}Ga{sub 0.9}As quantum well (QW) and In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interactionmore » with random nuclear field.« less

Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Kumar, P. S. Anil

2016-12-01

Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (ΔV) in semiconductor is found to be associated with a drastic increment in ΔV in Fe3O4 based devices for temperature <120 K (T V, the Verwey transition). Such an enhancement of ΔV is absent in the devices with Fe as spin source. Further, the overall device resistance has no drastic difference at T V. This renders a direct proof that the observed ΔV is not influenced by the so-called metal-to-insulator transition of Fe3O4 at T V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T V has to be reinvestigated.

Experimental Demonstration of xor Operation in Graphene Magnetologic Gates at Room Temperature

NASA Astrophysics Data System (ADS)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Žutić, Igor; Krivorotov, Ilya; Sham, L. J.; Kawakami, Roland K.

2016-04-01

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single-layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (xor) logic operation. Furthermore, a simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing the device parameters such as the device dimensions. This advance holds promise as a basic building block for spin-based information processing.

Nano-fabricated perpendicular magnetic anisotropy electrodes for lateral spin valves and observation of Nernst-Ettingshausen related signals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chejanovsky, N.; Sharoni, A., E-mail: amos.sharoni@biu.ac.il

2014-08-21

Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano-scaling, these have almost not been studied. This is mainly due to difficulties in fabricating PMA FMs in a lateral geometry. We present here an efficient method, based on ion-milling through an AlN mask, for fabrication of LSVs with multi-layered PMA FMs such as Co/Pd and Co/Ni. We demonstrate, using standard permalloy FMs, that the method enables efficient spin injection.more » We show the multi-layer electrodes retain their PMA properties as well as spin injection and detection in PMA LSVs. In addition, we find a large asymmetric voltage signal which increases with current. We attribute this to a Nernst-Ettingshausen effect caused by local Joule heating and the perpendicular magnetic easy axis.« less

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

NASA Astrophysics Data System (ADS)

Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

2018-06-01

We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

Coherent Spin Amplification Using a Beam Splitter

NASA Astrophysics Data System (ADS)

Yan, Chengyu; Kumar, Sanjeev; Thomas, Kalarikad; See, Patrick; Farrer, Ian; Ritchie, David; Griffiths, Jonathan; Jones, Geraint; Pepper, Michael

2018-03-01

We report spin amplification using a capacitive beam splitter in n -type GaAs where the spin polarization is monitored via a transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled, and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of around 50% can be obtained. Additionally, the spin remains coherent as shown by the observation of quantum interference. Our results illustrate that spin-polarization amplification can be achieved in materials without strong spin-orbit interaction.

MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

ScienceCinema

Palmstrom, Chris [University of California, Santa Barbara, California, United States

2017-12-09

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wasner, Evan; Bearden, Sean; Žutić, Igor, E-mail: zigor@buffalo.edu

Digital operation of lasers with injected spin-polarized carriers provides an improved operation over their conventional counterparts with spin-unpolarized carriers. Such spin-lasers can attain much higher bit rates, crucial for optical communication systems. The overall quality of a digital signal in these two types of lasers is compared using eye diagrams and quantified by improved Q-factors and bit-error-rates in spin-lasers. Surprisingly, an optimal performance of spin-lasers requires finite, not infinite, spin-relaxation times, giving a guidance for the design of future spin-lasers.

Electrical spin injection and detection in molybdenum disulfide multilayer channel

PubMed Central

Liang, Shiheng; Yang, Huaiwen; Renucci, Pierre; Tao, Bingshan; Laczkowski, Piotr; Mc-Murtry, Stefan; Wang, Gang; Marie, Xavier; George, Jean-Marie; Petit-Watelot, Sébastien; Djeffal, Abdelhak; Mangin, Stéphane; Jaffrès, Henri; Lu, Yuan

2017-01-01

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. PMID:28387252

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

PubMed Central

Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

2016-01-01

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

Bias Dependence of the Electrical Spin Injection into GaAs from Co -Fe -B /MgO Injectors with Different MgO Growth Processes

NASA Astrophysics Data System (ADS)

Barate, P.; Liang, S. H.; Zhang, T. T.; Frougier, J.; Xu, B.; Schieffer, P.; Vidal, M.; Jaffrès, H.; Lépine, B.; Tricot, S.; Cadiz, F.; Garandel, T.; George, J. M.; Amand, T.; Devaux, X.; Hehn, M.; Mangin, S.; Tao, B.; Han, X. F.; Wang, Z. G.; Marie, X.; Lu, Y.; Renucci, P.

2017-11-01

We investigate the influence of the MgO growth process on the bias dependence of the electrical spin injection from a Co -Fe -B /MgO spin injector into a GaAs-based light-emitting diode (spin LED). With this aim, textured MgO tunnel barriers are fabricated either by sputtering or molecular-beam-epitaxy (MBE) methods. For the given growth parameters used for the two techniques, we observe that the circular polarization of the electroluminescence emitted by spin LEDs is rather stable as a function of the injected current or applied bias for the samples with sputtered tunnel barriers, whereas the corresponding circular polarization decreases abruptly for tunnel barriers grown by MBE. We attribute these different behaviors to the different kinetic energies of the injected carriers linked to differing amplitudes of the parasitic hole current flowing from GaAs to Co-Fe-B in both cases.

Electrical spin injection from CoFe2O4 into p-Si semiconductor across MgO tunnel barrier for spin electronics

NASA Astrophysics Data System (ADS)

Panda, J.; Maji, Nilay; Nath, T. K.

2017-05-01

The room temperature spin injection and detection in non magnetic p-Si semiconductor have been studied in details in our CoFe2O4 (CFO)/MgO/p-Si heterojunction. The 3-terminal tunnel contacts have been made on the device for transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The spin accumulation in non magnetic p-Si semiconductor has been observed at different bias current under the applied magnetic field parallel to the film plane in the temperature range of 40-300 K. We have observed a giant spin accumulation in p-Si semiconductor using MgO/CFO tunnel contact. The Hanley effect is used to control the reduction of spin accumulation by applying magnetic field perpendicular to the carrier spin in the p-Si. The accumulated spin signal decays as a function of applied magnetic field for fixed bias current. These results will enable utilization of the spin degree of freedom in complementary Si devices and its further development.

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily destroyed. In order to confirm the performance of tunnel junction, we use tunnel magnetoresistance(TMR). TMR consists of two kinds of ferromagnetic materials and an oxide layer as tunnel barrier in order to measure spin valve effect. Using silicon as a collector with Schottky barrier interface between metal and silicon, ballistic hot spin polarized electron injection into silicon is demonstrated. We also observed change of coercive field and magnetoresistance due to modification of local states in ferromagnetic materials and surface states at the interface between metal and silicon due to strain.

Magnetic proximity control of spin currents and giant spin accumulation in graphene

NASA Astrophysics Data System (ADS)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves

NASA Astrophysics Data System (ADS)

Anugrah, Yoska; Hu, Jiaxi; Stecklein, Gordon; Crowell, Paul A.; Koester, Steven J.

2018-01-01

Graphene is an ideal material for spintronic devices due to its low spin-orbit coupling and high mobility. One of the most important potential applications of graphene spintronics is for use in neuromorphic computing systems, where the tunable spin resistance of graphene can be used to apply analog weighting factors. A key capability needed to achieve spin-based neuromorphic computing systems is to achieve distinct regions of control, where injected and detected spin currents can be tuned independently. Here, we demonstrate the ability to achieve such independent control using a graphene spin valve geometry where the injector and detector regions are modulated by two separate bottom gate electrodes. The spin transport parameters and their dependence on each gate voltage are extracted from Hanle precession measurements. From this analysis, local spin transport parameters and their dependence on the local gate voltage are found, which provide a basis for a spatially-resolved spin resistance network that simulates the device. The data and model are used to calculate the spin currents flowing into, through, and out of the graphene channel. We show that the spin current flowing through the graphene channel can be modulated by 30% using one gate and that the spin current absorbed by the detector can be modulated by 50% using the other gate. This result demonstrates that spin currents can be controlled by locally tuning the spin resistance of graphene. The integration of chemical vapor deposition (CVD) grown graphene with local gates allows for the implementation of large-scale integrated spin-based circuits.

Spin injection into Pt-polymers with large spin-orbit coupling

NASA Astrophysics Data System (ADS)

Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

2014-03-01

Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

Electrical detection of spin transport in Si two-dimensional electron gas systems

NASA Astrophysics Data System (ADS)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Spin-polarized current injection induced magnetic reconstruction at oxide interface

DOE PAGES

Fang, F.; Yin, Y. W.; Li, Qi; ...

2017-01-04

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO 3/La 0.5Ca 0.5MnO 3/La 0.7Sr 0.3MnO 3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition ofmore » the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. As a result, the effect is robust and may serve as a viable route for electronic and spintronic applications.« less

Spin-polarized current injection induced magnetic reconstruction at oxide interface

NASA Astrophysics Data System (ADS)

Fang, F.; Yin, Y. W.; Li, Qi; Lüpke, G.

2017-01-01

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications.

Micro-focused Brillouin light scattering study of the magnetization dynamics driven by Spin Hall effect in a transversely magnetized NiFe nanowire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madami, M., E-mail: marco.madami@fisica.unipg.it; Carlotti, G.; Gubbiotti, G.

2015-05-07

We employed micro-focused Brillouin light scattering to study the amplification of the thermal spin wave eigenmodes by means of a pure spin current, generated by the spin-Hall effect, in a transversely magnetized Pt(4 nm)/NiFe(4 nm)/SiO{sub 2}(5 nm) layered nanowire with lateral dimensions 500 × 2750 nm{sup 2}. The frequency and the cross section of both the center (fundamental) and the edge spin wave modes have been measured as a function of the intensity of the injected dc electric current. The frequency of both modes exhibits a clear redshift while their cross section is greatly enhanced on increasing the intensity of the injected dc. A threshold-like behaviormore » is observed for a value of the injected dc of 2.8 mA. Interestingly, an additional mode, localized in the central part of the nanowire, appears at higher frequency on increasing the intensity of the injected dc above the threshold value. Micromagnetic simulations were used to quantitatively reproduce the experimental results and to investigate the complex non-linear dynamics induced by the spin-Hall effect, including the modification of the spatial profile of the spin wave modes and the appearance of the extra mode above the threshold.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tani, Yasuo; Shikoh, Eiji, E-mail: shikoh@elec.eng.osaka-cu.ac.jp; Teki, Yoshio

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni{sub 80}Fe{sub 20} tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni{sub 80}Fe{sub 20}, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

Dynamic spin injection into a quantum well coupled to a spin-split bound state

NASA Astrophysics Data System (ADS)

Maslova, N. S.; Rozhansky, I. V.; Mantsevich, V. N.; Arseyev, P. I.; Averkiev, N. S.; Lähderanta, E.

2018-05-01

We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to nontrivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Current-induced modulation of backward spin-waves in metallic microstructures

NASA Astrophysics Data System (ADS)

Sato, Nana; Lee, Seo-Won; Lee, Kyung-Jin; Sekiguchi, Koji

2017-03-01

We performed a propagating spin-wave spectroscopy for backward spin-waves in ferromagnetic metallic microstructures in the presence of electric-current. Even with the smaller current injection of 5× {{10}10} A m-2 into ferromagnetic microwires, the backward spin-waves exhibit a gigantic 200 MHz frequency shift and a 15% amplitude change, showing 60 times larger modulation compared to previous reports. Systematic experiments by measuring dependences on a film thickness of mirowire, on the wave-vector of spin-wave, and on the magnitude of bias field, we revealed that for the backward spin-waves a distribution of internal magnetic field generated by electric-current efficiently modulates the frequency and amplitude of spin-waves. The gigantic frequency and amplitude changes were reproduced by a micromagnetics simulation, predicting that the current-injection of 5× {{10}11} A m-2 allows 3 GHz frequency shift. The effective coupling between electric-current and backward spin-waves has a potential to build up a logic control method which encodes signals into the phase and amplitude of spin-waves. The metallic magnonics cooperating with electronics could suggest highly integrated magnonic circuits both in Boolean and non-Boolean principles.

Kondo physics in non-local metallic spin transport devices.

PubMed

O'Brien, L; Erickson, M J; Spivak, D; Ambaye, H; Goyette, R J; Lauter, V; Crowell, P A; Leighton, C

2014-05-29

The non-local spin-valve is pivotal in spintronics, enabling separation of charge and spin currents, disruptive potential applications and the study of pressing problems in the physics of spin injection and relaxation. Primary among these problems is the perplexing non-monotonicity in the temperature-dependent spin accumulation in non-local ferromagnetic/non-magnetic metal structures, where the spin signal decreases at low temperatures. Here we show that this effect is strongly correlated with the ability of the ferromagnetic to form dilute local magnetic moments in the NM. This we achieve by studying a significantly expanded range of ferromagnetic/non-magnetic combinations. We argue that local moments, formed by ferromagnetic/non-magnetic interdiffusion, suppress the injected spin polarization and diffusion length via a manifestation of the Kondo effect, thus explaining all observations. We further show that this suppression can be completely quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer.

Nonreciprocity of electrically excited thermal spin signals in CoFeAl-Cu-Py lateral spin valves

NASA Astrophysics Data System (ADS)

Hu, Shaojie; Cui, Xiaomin; Nomura, Tatsuya; Min, Tai; Kimura, Takashi

2017-03-01

Electrical and thermal spin currents excited by an electric current have been systematically investigated in lateral spin valves consisting of CoFeAl and Ni80Fe20 (Py) wires bridged by a Cu strip. In the electrical spin signal, the reciprocity between the current and voltage probes was clearly confirmed. However, a significant nonreciprocity was observed in the thermal spin signal. This provides clear evidence that a large spin-dependent Seebeck coefficient is more important than the spin polarization for efficient thermal spin injection and detection. We demonstrate that the spin-dependent Seebeck coefficient can be simply evaluated from the thermal spin signals for two configurations. Our experimental description paves a way for evaluating a small spin-dependent Seebeck coefficient for conventional ferromagnets without using complicated parameters.

Electronic spin transport in gate-tunable black phosphorus spin valves

NASA Astrophysics Data System (ADS)

Liu, Jiawei; Avsar, Ahmet; Tan, Jun You; Oezyilmaz, Barbaros

High charge mobility, the electric field effect and small spin-orbit coupling make semiconducting black phosphorus (BP) a promising material for spintronics device applications requiring long spin distance spin communication with all rectification and amplification actions. Towards this, we study the all electrical spin injection, transport and detection under non-local spin valve geometry in fully encapsulated ultra-thin BP devices. We observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. These values are an order of magnitude higher than what have been measured in typical graphene spin valve devices. Moreover, the spin transport depends strongly on charge carrier concentration and can be manipulated in a spin transistor-like manner by controlling electric field. This behaviour persists even at room temperature. Finally, we will show that similar to its electrical and optical properties, spin transport property is also strongly anisotropic.

Low-Resistance Spin Injection into Silicon Using Graphene Tunnel Barriers

DTIC Science & Technology

2012-11-01

compromise spin injection/transport/detection. Ferromagnetic metals readily form silicides even at room tempera- ture19, and diffusion of the ferromagnetic... metal /tunnel barrier/Si contacts using 2 nm SiO2 (triangles), 1.5 nm Al2O3 (diamond) and monolayer graphene (circles) tunnel barriers prepared from...and B. T. Jonker* Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore’s law. Ferromagnetic metals are ideal

Observation of long-lived persistent spin polarization in a topological insulator

NASA Astrophysics Data System (ADS)

Tian, Jifa; Hong, Seokmin; Miotkowski, Ireneusz; Datta, Supriyo; Chen, Yong P.

3D Topological insulators (TI), featuring helically spin-momentum-locked topological surface states (TSS), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current induced electronic spin polarization that may be used for all electrical spin generation and injection. Here, we report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large ``writing'' current applied for an extended time. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.

Enhanced spin pumping into superconductors provides evidence for superconducting pure spin currents

NASA Astrophysics Data System (ADS)

Jeon, Kun-Rok; Ciccarelli, Chiara; Ferguson, Andrew J.; Kurebayashi, Hidekazu; Cohen, Lesley F.; Montiel, Xavier; Eschrig, Matthias; Robinson, Jason W. A.; Blamire, Mark G.

2018-06-01

Unlike conventional spin-singlet Cooper pairs, spin-triplet pairs can carry spin1,2. Triplet supercurrents were discovered in Josephson junctions with metallic ferromagnet spacers, where spin transport can occur only within the ferromagnet and in conjunction with a charge current. Ferromagnetic resonance injects a pure spin current from a precessing ferromagnet into adjacent non-magnetic materials3,4. For spin-singlet pairing, the ferromagnetic resonance spin pumping efficiency decreases below the critical temperature (Tc) of a coupled superconductor5,6. Here we present ferromagnetic resonance experiments in which spin sink layers with strong spin-orbit coupling are added to the superconductor. Our results show that the induced spin currents, rather than being suppressed, are substantially larger in the superconducting state compared with the normal state; although further work is required to establish the details of the spin transport process, we show that this cannot be mediated by quasiparticles and is most likely a triplet pure spin supercurrent.

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Determination of intrinsic spin Hall angle in Pt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng

2014-10-13

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window

NASA Astrophysics Data System (ADS)

Roca, Ronel Christian; Nishizawa, Nozomi; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-06-01

A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin InGaAs active layer under the spin-detecting Fe contact in which spin-polarized carriers are generated and injected into the Fe contact through a crystalline AlOx tunnel barrier. Experiments have been carried out with a circular polarization spectrometry set up, through which the helicity-dependent photocurrent component, ΔI, is obtained with the conversion efficiency F ≈ 0.4%, where F is the ratio between ΔI and total photocurrent Iph. This value is the highest reported so far for pure lateral-type spin-photodiodes. It is discussed through the analysis with a model consisting of drift-diffusion and quantum tunneling equations that a factor that limits the F value is unoccupied spin-polarized density-of-states of Fe in energy region into which the spin-polarized electrons in a semiconductor are injected.

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

NASA Astrophysics Data System (ADS)

Avsar, Ahmet; Tan, Jun Y.; Kurpas, Marcin; Gmitra, Martin; Watanabe, Kenji; Taniguchi, Takashi; Fabian, Jaroslav; Özyilmaz, Barbaros

2017-09-01

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a bandgap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of two-dimensional semiconductors could help overcome this basic challenge. In this letter we report an important step towards making two-dimensional semiconductor spin devices. We have fabricated a spin valve based on ultrathin (~5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material, which supports all electrical spin injection, transport, precession and detection up to room temperature. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that the Elliott-Yafet spin relaxation mechanism is dominant. We also show that spin transport in ultrathin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect.

Coherent spin transport through a 350 micron thick silicon wafer.

PubMed

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

NASA Astrophysics Data System (ADS)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Critical current and linewidth reduction in spin-torque nano-oscillators by delayed self-injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalsa, Guru, E-mail: guru.khalsa@nist.gov; Stiles, M. D.; Grollier, J.

2015-06-15

Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel junctions show that with reasonable parameters this approach can decrease critical currents as much as 25% and linewidths by a factor of 4. Analytical calculations, which agree well with simulations, demonstrate that these results can be generalized to any kind of spin-torque oscillator.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

PubMed Central

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-01-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory. PMID:27374496

Spin Funneling for Enhanced Spin Injection into Ferromagnets

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, June-Young; Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr; Baek, Seung-heon Chris

We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced atmore » a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.« less

Evidence for spin injection and transport in solution-processed TIPS-pentacene at room temperature

NASA Astrophysics Data System (ADS)

Mooser, S.; Cooper, J. F. K.; Banger, K. K.; Wunderlich, J.; Sirringhaus, H.

2012-10-01

Recently, there has been growing interest in the field of organic spintronics, where the research on organic semiconductors (OSCs) has extended from the complex aspects of charge carrier transport to the study of the spin transport properties of those anisotropic and partly localized systems.1 Furthermore, solution-processed OSCs are not only interesting due to their technological applications, but it has recently been shown in 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin film transistors that they can exhibit a negative temperature coefficient of the mobility due to localized transport limited by thermal lattice fluctuations.2 Here, spin injection and transport in solution-processed TIPS-pentacene are investigated exploiting vertical CoPt/TIPSpentacene/AlOx/Co spin valve architectures.3 The antiparallel magnetization state of the relative orientation of CoPt and Co is achieved due to their different coercive fields. A spin valve effect is detected from T = 175 K up to room temperature, where the resistance of the device is lower for the antiparallel magnetization state. The first observation of the scaling of the magnetoresistance (MR) with the bulk mobility of the OSC as a function of temperature, together with the dependence of the MR on the interlayer thickness, clearly indicates spin injection and transport in TIPS-pentacene. From OSC-spacer thickness-dependent MR measurements, a spin relaxation length of TIPS-pentacene of (24+/-6) nm and a spin relaxation time of approximately 3.5 μs at room temperature are estimated, taking the measured bulk mobility of holes into account.

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

NASA Astrophysics Data System (ADS)

Andrianov, T.; Vedyaev, A.; Dieny, B.

2018-05-01

We analytically investigated the spin-dependent transport properties in a lateral spin-valve device comprising pinned ferromagnetic electrodes allowing the injection of a spin current in a spin conducting channel where spin orbit scattering takes place. This produces an inverse spin Hall (ISHE) voltage across the thickness of the spin conducting channel. It is shown that by adding an extra soft ferromagnetic electrode with rotatable magnetization along the spin conducting channel, the ISHE generated voltage can be magnetically modulated by changing the magnetization orientation of this additional electrode. The dependence of the ISHE voltage on the direction of magnetization of the ferromagnetic electrode with rotatable magnetization was calculated in various configurations. Our results suggest that such structures could be considered as magnetic field sensors in situations where the total thickness of the sensor is constrained such as in hard disk drive readers.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

NASA Astrophysics Data System (ADS)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Out-of-equilibrium spin transport in mesoscopic superconductors.

PubMed

Quay, C H L; Aprili, M

2018-08-06

The excitations in conventional superconductors, Bogoliubov quasi-particles, are spin-[Formula: see text] fermions but their charge is energy-dependent and, in fact, zero at the gap edge. Therefore, in superconductors (unlike normal metals) spin and charge degrees of freedom may be separated. In this article, we review spin injection into conventional superconductors and focus on recent experiments on mesoscopic superconductors. We show how quasi-particle spin transport and out-of-equilibrium spin-dependent superconductivity can be triggered using the Zeeman splitting of the quasi-particle density of states in thin-film superconductors with small spin-mixing scattering. Finally, we address the spin dynamics and the feedback of quasi-particle spin imbalances on the amplitude of the superconducting energy gap.This article is part of the theme issue 'Andreev bound states'. © 2018 The Author(s).

Modeling all-electrical detection of the inverse Edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure

NASA Astrophysics Data System (ADS)

Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

2018-04-01

The spin-momentum locking of the surface states in a three-dimensional topological insulator (TI) allows a charge current on the surface of the TI induced by an applied spin current onto the surface, which is known as the inverse Edelstein effect (IEE), that could be achieved either by injecting pure spin current by spin-pumping from a ferromagnetic metal (FM) layer or by injecting spin-polarized charge current by direct tunneling of electrons from the FM to the TI. Here, we present a theory of the observed IEE effect in a TI-FM heterostructure for the spin-polarized tunneling experiments. If an electrical current is passed from the FM to the surface of the TI, because of density-of-states polarization of the FM, an effective imbalance of spin-polarized electrons occurs on the surface of the TI. Due to the spin-momentum helical locking of the surface states in the TI, a difference of transverse charge accumulation appears on the TI surface in a direction orthogonal to the direction of the magnetization of the FM, which is measured as a voltage difference. Here, we derive the two-dimensional transport equations of electrons on the surface of a diffusive TI, coupled to a FM, starting from the quantum kinetic equation, and analytically solve the equations for a rectangular geometry to calculate the voltage difference.

Thermoelectric spin voltage in graphene

NASA Astrophysics Data System (ADS)

Sierra, Juan F.; Neumann, Ingmar; Cuppens, Jo; Raes, Bart; Costache, Marius V.; Valenzuela, Sergio O.

2018-02-01

In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents1,2. Amongst the most intriguing phenomena is the spin Seebeck effect3-5, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect6-8. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport9-11, energy-dependent carrier mobility and unique density of states12,13. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current14-17. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias.

Computational investigation of spin-polarization in cobalt/graphite superlattices

NASA Astrophysics Data System (ADS)

Goto, Kim F.; Hill, Nicola A.; Sanvito, Stefano

2003-03-01

We present results of a computational investigation of the magnetic properties of cobalt/ graphite superlattices. This work was motivated by experimental data showing spin injection into carbon nanotubes via cobalt contacts [1] as well as the discovery of a magnetic meteorite made from graphite and magnetic particles, in which part of the magnetization is on the carbon atoms [2]. Using density functional theory within the local spin-density approximation (the SIESTA implementation), we show that cobalt induces both n-doping and a magnetic moment in the graphite layers adjacent to the cobalt-carbon interface. We also show that the magnetic properties are strongly affected by the orientation of the graphite. Finally, implications for spin injection and spin-polarized transport are discussed. [1] K. Tsukagoshi, B.W. Alphenaar, and H. Ago, Nature (London) 401, 572 (1999) [2] J.M.D. Coey, M. Venkatesan, C.B. Fitzgerald, A.P. Douvalis and I.S. Sanders, Nature (London) 420, 156 (2002)

Room-temperature storage of quantum entanglement using decoherence-free subspace in a solid-state spin system

NASA Astrophysics Data System (ADS)

Wang, F.; Huang, Y.-Y.; Zhang, Z.-Y.; Zu, C.; Hou, P.-Y.; Yuan, X.-X.; Wang, W.-B.; Zhang, W.-G.; He, L.; Chang, X.-Y.; Duan, L.-M.

2017-10-01

We experimentally demonstrate room-temperature storage of quantum entanglement using two nuclear spins weakly coupled to the electronic spin carried by a single nitrogen-vacancy center in diamond. We realize universal quantum gate control over the three-qubit spin system and produce entangled states in the decoherence-free subspace of the two nuclear spins. By injecting arbitrary collective noise, we demonstrate that the decoherence-free entangled state has coherence time longer than that of other entangled states by an order of magnitude in our experiment.

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp; Shuto, Y.; Sugahara, S., E-mail: sugahara@isl.titech.ac.jp

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accuratelymore » fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.« less

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-03-20

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. Here, we measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. While using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. Furthermore, the relative strengthmore » of the effect is in agreement with spectroscopic measurements and first principles calculations. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Long-range mutual synchronization of spin Hall nano-oscillators

NASA Astrophysics Data System (ADS)

Awad, A. A.; Dürrenfeld, P.; Houshang, A.; Dvornik, M.; Iacocca, E.; Dumas, R. K.; Åkerman, J.

2017-03-01

The spin Hall effect in a non-magnetic metal with spin-orbit coupling injects transverse spin currents into adjacent magnetic layers, where the resulting spin transfer torque can drive spin wave auto-oscillations. Such spin Hall nano-oscillators (SHNOs) hold great promise as extremely compact and broadband microwave signal generators and magnonic spin wave injectors. Here we show that SHNOs can also be mutually synchronized with unprecedented efficiency. We demonstrate mutual synchronization of up to nine individual SHNOs, each separated by 300 nm. Through further tailoring of the connection regions we can extend the synchronization range to 4 μm. The mutual synchronization is observed electrically as an increase in the power and coherence of the microwave signal, and confirmed optically using micro-Brillouin light scattering microscopy as two spin wave regions sharing the same spectral content, in agreement with our micromagnetic simulations.

Current-induced spin polarization on a Pt surface: A new approach using spin-polarized positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Kawasuso, A.; Fukaya, Y.; Maekawa, M.; Zhang, H.; Seki, T.; Yoshino, T.; Saitoh, E.; Takanashi, K.

2013-09-01

Transversely spin-polarized positrons were injected near Pt and Au surfaces under an applied electric current. The three-photon annihilation of spin-triplet positronium, which was emitted from the surfaces into vacuum, was observed. When the positron spin polarization was perpendicular to the current direction, the maximum asymmetry of the three-photon annihilation intensity was observed upon current reversal for the Pt surfaces, whereas it was significantly reduced for the Au surface. The experimental results suggest that electrons near the Pt surfaces were in-plane and transversely spin-polarized with respect to the direction of the electric current. The maximum electron spin polarization was estimated to be more than 0.01 (1%).

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

NASA Astrophysics Data System (ADS)

Bhardwaj, Ravindra G.; Lou, Paul C.; Kumar, Sandeep

2018-01-01

The development of spintronics and spin-caloritronics devices needs efficient generation, detection, and manipulation of spin current. The thermal spin current from the spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. However, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without a heavy metal spin detector. p-Si, having a centrosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling, leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for the detection of spin-Seebeck effects, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to the Ni80Fe20 layer due to the thermal spin galvanic effect and the spin-Hall effect, causing spin-orbit torques. The thermal spin-orbit torques lead to collapse of magnetic hysteresis of the 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

NASA Astrophysics Data System (ADS)

Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

2017-04-01

Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

Spin-Wave Chirality and Its Manifestations in Antiferromagnets

NASA Astrophysics Data System (ADS)

Proskurin, Igor; Stamps, Robert L.; Ovchinnikov, Alexander S.; Kishine, Jun-ichiro

2017-10-01

As first demonstrated by Tang and Cohen in chiral optics, the asymmetry in the rate of electromagnetic energy absorption between left and right enantiomers is determined by an optical chirality density. Here, we demonstrate that this effect can exist in magnetic spin systems. By constructing a formal analogy with electrodynamics, we show that in antiferromagnets with broken chiral symmetry, the asymmetry in local spin-wave energy absorption is proportional to a spin-wave chirality density, which is a direct counterpart of optical zilch. We propose that injection of a pure spin current into an antiferromagnet may serve as a chiral symmetry breaking mechanism, since its effect in the spin-wave approximation can be expressed in terms of additional Lifshitz invariants. We use linear response theory to show that the spin current induces a nonequilibrium spin-wave chirality density.

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules.

PubMed

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-08-31

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices.

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules

PubMed Central

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-01-01

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices. PMID:27578395

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules

NASA Astrophysics Data System (ADS)

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-08-01

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie; Chen, Zhaoxia

2014-06-14

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Furthermore » study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.« less

Spin Dynamics in Novel Materials Systems

NASA Astrophysics Data System (ADS)

Yu, Howard

Spintronics and organic electronics are fields that have made considerable advances in recent years, both in fundamental research and in applications. Organic materials have a number of attractive properties that enable them to complement applications traditionally fulfilled by inorganic materials, while spintronics seeks to take advantage of the spin degree of freedom to produce new applications. My research is aimed at combining these two fields to develop organic materials for spintronics use. My thesis is divided into three primary projects centered around an organic-based semiconducting ferrimagnet, vanadium tetracyanoethylene. First, we investigated the transport characteristics of a hybrid organic-inorganic heterostructure. Semiconductors form the basis of the electronics industry, and there has been considerable effort put forward to develop organic semiconductors for applications like organic light-emitting diodes and organic thin film transistors. Working with hybrid organic-inorganic semiconductor device structures allows us to potentially take advantage of the infrastructure that has already been developed for silicon and other inorganic semiconductors. This could potentially pave the way for a new class of active hybrid devices with multifunctional behavior. Second, we investigated the magnetic resonance characteristics of V[TCNE]x, in multiple measurement schemes and exploring the effect of temperature, frequency, and chemical tuning. Recently, the spintronics community has shifted focus from static electrical spin injection to various dynamic processes, such as spin pumping and thermal effects. Spin pumping in particular is an intriguing way to generate pure spin currents via magnetic resonance that has attracted a high degree of interest, with the FMR linewidth being an important metric for spin injection. Furthermore, we can potentially use these measurements to probe the magnetic properties as we change the physical properties of the materials by chemically tuning the organic ligand. We are therefore interested in exploring the resonance properties of this materials system to lay the groundwork for future spin pumping applications. Third, we have made preliminary measurements of spin pumping in hybrid and all-organic bilayer structures. As mentioned above, FMR-driven spin pumping is method for generating pure spin currents with no associated charge motion. This can be detected in a number of ways, one of which is monitoring the FMR characteristics of two ferromagnets in close contact, where spins injected from one magnet into the other changes the linewidth. In conjunction with the magnetic resonance measurements, we have started to investigate the FMR properties of these bilayer systems.

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

PubMed

Yu, T; Wu, M W

2015-07-01

The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

NASA Astrophysics Data System (ADS)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

Teleportation between distant qudits via scattering of mobile qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciccarello, Francesco; Zarcone, Michelangelo; Bose, Sougato

2010-04-15

We consider a one-dimensional structure where noninteracting spin-s scattering centers, such as quantum impurities or multilevel atoms, are embedded at given positions. We show that the injection into the structure of unpolarized flying qubits, such as electrons or photons, along with path detection suffice to accomplish spin-state teleportation between two centers via a third ancillary one. No action over the internal quantum state of both the spin-s particles and the flying qubits is required. The protocol enables the transfer of quantum information between well-separated static entities in nanostructures by exploiting a very low control mechanism, namely scattering.

A two-dimensional spin field-effect switch

NASA Astrophysics Data System (ADS)

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; Dery, Hanan; Hueso, Luis E.; Casanova, Fèlix

2016-11-01

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

Generation and detection of dissipationless spin current in a MgO/Si bilayer

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spintronics is an analogue to electronics where the spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two of the biggest challenges for spintronics devices. In this study, we report a solution to the two problems of spin current generation and detection in Si. Using non-local measurement, we experimentally demonstrate the generation of helical dissipationless spin current using the spin-Hall effect. Contrary to the theoretical prediction, we observe the spin-Hall effect in both n-doped and p-doped Si. The helical spin current is attributed to the site-inversion asymmetry of the diamond cubic lattice of Si and structure inversion asymmetry in a MgO/Si bilayer. The spin to charge conversion in Si is insignificant due to weak spin-orbit coupling. For the efficient detection of spin current, we report spin to charge conversion at the MgO (1 nm)/Si (2 µm) (p-doped and n-doped) thin film interface due to Rashba spin-orbit coupling. We detected the spin current at a distance of  >100 µm, which is an order of magnitude larger than the longest spin diffusion length measured using spin injection techniques. The existence of spin current in Si is verified from the coercivity reduction in a Co/Pd multilayer due to spin-orbit torque generated by spin current from Si.

Terahertz spin current pulses controlled by magnetic heterostructures

NASA Astrophysics Data System (ADS)

Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

2013-04-01

In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

Proposal for a graphene-based all-spin logic gate

NASA Astrophysics Data System (ADS)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

2015-02-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

Increase in Spin Injection Efficiency of a CoFe/MgO (100) Tunnel Spin Injector with Thermal Annealing

DTIC Science & Technology

2005-01-24

geometry, the optical selection rules provide a direct correlation between the EL polarization and the spin polarization of the electrons just prior...Holland, Amsterdam, 1984d. 18M. Gurioli, A. Vinattieri, M. Colocci, C. Deparis, J. Massies, G. Neu, A. Bosacchi, and S. Franchi , Phys. Rev. B 44, 3115

GMAG Dissertation Award: Tunnel spin injectors for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

2004-03-01

Spin-based electronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The magneto-transport properties of two families of tunnel spin injectors will be discussed. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence (EL) from a quantum well light emitting diode structure. The temperature and bias dependence of the EL polarization provides insight into the mechanism of spin relaxation within the semiconductor heterostructure. Collaborators: Roger Wang^1,2, Sebastiaan van Dijken^1,*, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^2, Glenn Solomon^2, James Harris^2, and Stuart S. P. Parkin^1 * Currently at Trinity College, Dublin, Ireland

Thermal imaging of spin Peltier effect

NASA Astrophysics Data System (ADS)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

Nonlinear and Nonequilibrium Spin Injection in Magnetic Tunneling Junctions

NASA Astrophysics Data System (ADS)

Guo, Hong

2007-03-01

Quantitative analysis of charge and spin quantum transport in spintronic devices requires an atomistic first principles approach that can handle nonlinear and nonequilibrium transport conditions. We have developed an approach for this purpose based on real space density functional theory (DFT) carried out within the Keldysh nonequilibrium Green's function formalism (NEGF). We report theoretical analysis of nonlinear and nonequilibrium spin injection and quantum transport in Fe/MgO/Fe trilayer structures as a function of external bias voltage. Devices with well relaxed atomic structures and with FeO oxidization layers are investigated as a function of external bias voltage. We also report calculations of nonequilibrium spin injection into molecular layers and graphene. Comparisons to experimental data will be presented. Work in collaborations with: Derek Waldron, Vladimir Timochevski (McGill University); Ke Xia (Institute of Physics, Chinese Academy of Science, Beijing, China); Eric Zhu, Jian Wang (University of Hong Kong); Paul Haney, and Allan MacDonald (University of Texas at Austin).

Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1998-01-01

Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

A generalized spin diffusion equation with four electrochemical potentials for channels with spin-orbit coupling

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Hong, Seokmin; Datta, Supriyo

We will present a general semiclassical theory for an arbitrary channel with spin-orbit coupling (SOC), that uses four electrochemical potential (U + , D + , U - , and D -) depending on the sign of z-component of the spin (up (U) , down (D)) and the sign of the x-component of the group velocity (+ , -) . This can be considered as an extension of the standard spin diffusion equation that uses two electrochemical potentials for up and down spin states, allowing us to take into account the unique coupling between charge and spin degrees of freedom in channels with SOC. We will describe applications of this model to answer a number of interesting questions in this field such as: (1) whether topological insulators can switch magnets, (2) how the charge to spin conversion is influenced by the channel resistivity, and (3) how device structures can be designed to enhance spin injection. This work was supported by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

NASA Astrophysics Data System (ADS)

Rasly, Mahmoud; Lin, Zhichao; Yamamoto, Masafumi; Uemura, Tetsuya

2016-05-01

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarized electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of 75As, 69Ga and 71Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.

Super-Poissonian Shot Noise of Squeezed-Magnon Mediated Spin Transport.

PubMed

Kamra, Akashdeep; Belzig, Wolfgang

2016-04-08

The magnetization of a ferromagnet (F) driven out of equilibrium injects pure spin current into an adjacent conductor (N). Such F|N bilayers have become basic building blocks in a wide variety of spin-based devices. We evaluate the shot noise of the spin current traversing the F|N interface when F is subjected to a coherent microwave drive. We find that the noise spectrum is frequency independent up to the drive frequency, and increases linearly with frequency thereafter. The low frequency noise indicates super-Poissonian spin transfer, which results from quasiparticles with effective spin ℏ^{*}=ℏ(1+δ). For typical ferromagnetic thin films, δ∼1 is related to the dipolar interaction-mediated squeezing of F eigenmodes.

All-electric spin modulator based on a two-dimensional topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo; Ai, Guoping; Liu, Ying

2016-01-18

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarizationmore » rotator by replacing the drain electrode with a non-magnetic material.« less

Spin interactions in InAs quantum dots

NASA Astrophysics Data System (ADS)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei, E-mail: zwei@anl.gov; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-05-07

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreementmore » with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides.

PubMed

Zhao, Pei; Li, Jianwei; Jin, Hao; Yu, Lin; Huang, Baibiao; Ying, Dai

2018-04-18

Giant tunnel magnetoresistance (TMR) and perfect spin-injection efficiency (SIE) are extremely significant for modern spintronic devices. Quantum transport properties in a two-dimensional (2D) VS2/MoS2/VS2 magnetic tunneling junction (MTJ) are investigated theoretically within the framework of density functional theory combining with the non-equilibrium Green's functions (DFT-NEGF) method. Our results indicate that the designed MTJ exhibits a TMR with a value up to 4 × 103, which can be used as a switch of spin-electron devices. And due to the huge barrier for spin-down transport, the spin-down electrons could hardly cross the central scattering region, thus achieving a perfect SIE. Furthermore, we also explore for the effect of bias voltage on the TMR and SIE. We find that the TMR increases with the increasing bias voltage, and the SIE is robust against either bias or gate voltage in MTJs, which can serve as effective spin filter devices. Our results can not only give fresh impetus to the research community to build MTJs but also provide potential materials for spintronic devices.

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Resonant spin wave excitations in a magnonic crystal cavity

NASA Astrophysics Data System (ADS)

Kumar, N.; Prabhakar, A.

2018-03-01

Spin polarized electric current, injected into permalloy (Py) through a nano contact, exerts a torque on the magnetization. The spin waves (SWs) thus excited propagate radially outward. We propose an antidot magnonic crystal (MC) with a three-hole defect (L3) around the nano contact, designed so that the frequency of the excited SWs, lies in the band gap of the MC. L3 thus acts as a resonant SW cavity. The energy in this magnonic crystal cavity can be tapped by an adjacent MC waveguide (MCW). An analysis of the simulated micromagnetic power spectrum, at the output port of the MCW reveals stable SW oscillations. The quality factor of the device, calculated using the decay method, was estimated as Q > 105 for an injected spin current density of 7 ×1012 A/m2.

Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Epstein, Arthur J.

2013-09-10

Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene wasmore » demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.« less

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

NASA Astrophysics Data System (ADS)

Lesne, E.; Fu, Yu; Oyarzun, S.; Rojas-Sánchez, J. C.; Vaz, D. C.; Naganuma, H.; Sicoli, G.; Attané, J.-P.; Jamet, M.; Jacquet, E.; George, J.-M.; Barthélémy, A.; Jaffrès, H.; Fert, A.; Bibes, M.; Vila, L.

2016-12-01

The spin-orbit interaction couples the electrons’ motion to their spin. As a result, a charge current running through a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronic functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronic hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism--the Rashba effect--in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES and highlight the importance of a long scattering time to achieve efficient spin-to-charge interconversion.

Demonstrating ultrafast polarization dynamics in spin-VCSELs

NASA Astrophysics Data System (ADS)

Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Gerhardt, Nils C.; Hofmann, Martin R.

2018-02-01

Vertical-cavity surface-emitting lasers (VCSELs) are used for short-haul optical data transmission with increasing bit rates. The optimization involves both enhanced device designs and the use of higher-order modulation formats. In order to improve the modulation bandwidth substantially, the presented work employs spin-pumped VCSELs (spin-VCSELs) and their polarization dynamics instead of relying on intensity-modulated devices. In spin-VCSELs, the polarization state of the emitted light is controllable via spin injection. By optical spin pumping a single-mode VCSEL is forced to emit light composed of both orthogonal linearly polarized fundamental modes. The frequencies of these two modes differ slightly by a value determined by the cavity birefringence. As a result, the circular polarization degree oscillates with their beat frequency, i.e., with the birefringence-induced mode splitting. We used this phenomenon to show so-called polarization oscillations, which are generated by pulsed spin injection. Their frequency represents the polarization dynamics resonance frequency and can be tuned over a wide range via the birefringence, nearly independent from any other laser parameter. In previous work we demonstrated a maximum birefringence-induced mode splitting of more than 250 GHz. In this work, compared to previous publications, we show an almost doubled polarization oscillation frequency of more than 80 GHz. Furthermore, we discuss concepts to achieve even higher values far above 100 GHz.

Pure spin current manipulation in antiferromagnetically exchange coupled heterostructures

NASA Astrophysics Data System (ADS)

Avilés-Félix, L.; Butera, A.; González-Chávez, D. E.; Sommer, R. L.; Gómez, J. E.

2018-03-01

We present a model to describe the spin currents generated by ferromagnet/spacer/ferromagnet exchange coupled trilayer systems and heavy metal layers with strong spin-orbit coupling. By exploiting the magnitude of the exchange coupling (oscillatory RKKY-like coupling) and the spin-flop transition in the magnetization process, it has been possible to produce spin currents polarized in arbitrary directions. The spin-flop transition of the trilayer system originates pure spin currents whose polarization vector depends on the exchange field and the magnetization equilibrium angles. We also discuss a protocol to control the polarization sign of the pure spin current injected into the metallic layer by changing the initial conditions of magnetization of the ferromagnetic layers previously to the spin pumping and inverse spin Hall effect experiments. The small differences in the ferromagnetic layers lead to a change in the magnetization vector rotation that permits the control of the sign of the induced voltage components due to the inverse spin Hall effect. Our results can lead to important advances in hybrid spintronic devices with new functionalities, particularly, the ability to control microscopic parameters such as the polarization direction and the sign of the pure spin current through the variation of macroscopic parameters, such as the external magnetic field or the thickness of the spacer in antiferromagnetic exchange coupled systems.

On the search for new anticancer drugs 14: the plasma pharmacokinetics and tissue distribution of spin-labeled thio-TEPA (SL-O-TT).

PubMed

Gutierrez, P L; Cohen, B E; Sosnovsky, G; Davis, T A; Egorin, M J

1985-01-01

We defined the plasma and tissue concentrations and pharmacokinetics of SL-O-TT, a spin-labeled analog of thio-TEPA, in 35-44-g male Swiss Webster mice that had received spin-labeled thio-TEPA at a dosage of 10 mg/kg. Concentrations of spin-labeled thio-TEPA in ethyl acetate extracts of tissue and plasma were determined by gas-liquid chromatography and electron spin resonance spectroscopy. Plasma concentrations of spin-labeled thio-TEPA declined in a biexponential fashion that was well described by the equation: Ct = 21.5e-0.276t + 2.30e-0.026t indicating a half-life alpha of 2.5 min and a half-life beta of 26.6 min. After 2 h there was still spin-labeled thio-TE-PA in plasma, but not in tissues. In tissues, no spin-labeled thio-TEPA was detected with gas-liquid chromatography 15 min after injection, but with electron-spin resonance label was found in lung and skeletal muscle. The main metabolite of spin-labeled thio-TEPA is spin-labeled TEPA, where oxidative desulfurization is invoked as the main metabolic mechanism. Reduction of the spin label to the hydroxylamine was also observed with time.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

NASA Astrophysics Data System (ADS)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Spin-polarized transport in multiterminal silicene nanodevices

NASA Astrophysics Data System (ADS)

Xu, Ning

2018-01-01

The spin-polarized transport properties of multiterminal silicene nanodevices are studied using the tight binding model and Landauer-Buttier approach. We propose a four-terminal †-shaped junction device and two types of three-terminal T-shaped junction devices, which are made of the crossing of a zigzag and an armchair silicene nanoribbon. If the electrons are injected into the metallic lead, the near-perfect spin polarization with 100% around the Fermi energy can be achieved easily at the other semiconducting leads. Thus the multiterminal silicene nanodevices can act as controllable spin filters.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

NASA Astrophysics Data System (ADS)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.

PubMed

Korenev, V L; Akimov, I A; Zaitsev, S V; Sapega, V F; Langer, L; Yakovlev, D R; Danilov, Yu A; Bayer, M

2012-07-17

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Quasiparticle-mediated spin Hall effect in a superconductor.

PubMed

Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

2015-07-01

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

Spin-Polarized Hybridization at the interface between different 8-hydroxyquinolates and the Cr(001) surface

NASA Astrophysics Data System (ADS)

Wang, Jingying; Deloach, Andrew; Dougherty, Daniel B.; Dougherty Lab Team

Organic materials attract a lot of attention due to their promising applications in spintronic devices. It is realized that spin-polarized metal/organic interfacial hybridization plays an important role to improve efficiency of organic spintronic devices. Hybridized interfacial states help to increase spin injection at the interface. Here we report spin-resolved STM measurements of single tris(8-hydroxyquinolinato) aluminum molecules adsorbed on the antiferromagnetic Cr(001). Our observations show a spin-polarized interface state between Alq3 and Cr(001). Tris(8-hydroxyquinolinato) chromium has also been studied and compared with Alq3, which exhibits different spin-polarized hybridization with the Cr(001) surface state than Alq3. We attribute the differences to different character of molecular orbitals in the two different quinolates.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

PubMed

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rasly, Mahmoud; Lin, Zhichao; Yamamoto, Masafumi

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarizedmore » electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of {sup 75}As, {sup 69}Ga and {sup 71}Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.« less

Reexamination of Spin Transport Through a DOUBLE-δ Magnetic Barrier with Spin-Orbit Interactions

NASA Astrophysics Data System (ADS)

Bi, Caihua; Zhai, Feng

We revisit the properties of spin transport through a semiconductor 2DEG system subjected to the modulation of both a ferromagnetic metal (FM) stripe on top and the Rashba and Dresselhaus spin-orbit interactions (SOIs). The FM stripe has a magnetization along the transporting direction and generates an inhomogeneous magnetic field in the 2DEG plane which is taken as a double-δ shape. It is found that the spin polarization of this system generated from a spin-unpolarized injection can be remarkable only within a low Fermi energy region and is not more than 30% for the parameters available in current experiments. In this energy region, both the magnitude and the orientation of the spin polarization can be tuned by the Rashba strength, the Dresselhaus strength, and the magnetic field strength. The magnetization reversal of the FM stripe cannot result in a change of the conductance, but can rotate the orientation of the spin polarization. The results are in contrast to those in [ J. Phys.: Condens. Matter 15 (2003) L31] where a pure spin state for incident electrons is artificially assumed.

Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets

NASA Astrophysics Data System (ADS)

Akosa, Collins Ashu; Kim, Won-Seok; Bisig, André; Kläui, Mathias; Lee, Kyung-Jin; Manchon, Aurélien

2015-03-01

Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ˜∇2[m ×(u .∇ ) m ] +ξ ∇2[(u .∇ ) m ] , where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.

Extrinsic Rashba spin-orbit coupling effect on silicene spin polarized field effect transistors

NASA Astrophysics Data System (ADS)

Pournaghavi, Nezhat; Esmaeilzadeh, Mahdi; Abrishamifar, Adib; Ahmadi, Somaieh

2017-04-01

Regarding the spin field effect transistor (spin FET) challenges such as mismatch effect in spin injection and insufficient spin life time, we propose a silicene based device which can be a promising candidate to overcome some of those problems. Using non-equilibrium Green’s function method, we investigate the spin-dependent conductance in a zigzag silicene nanoribbon connected to two magnetized leads which are supposed to be either in parallel or anti-parallel configurations. For both configurations, a controllable spin current can be obtained when the Rashba effect is present; thus, we can have a spin filter device. In addition, for anti-parallel configuration, in the absence of Rashba effect, there is an intrinsic energy gap in the system (OFF-state); while, in the presence of Rashba effect, electrons with flipped spin can pass through the channel and make the ON-state. The current voltage (I-V) characteristics which can be tuned by changing the gate voltage or Rashba strength, are studied. More importantly, reducing the mismatch conductivity as well as energy consumption make the silicene based spin FET more efficient relative to the spin FET based on two-dimensional electron gas proposed by Datta and Das. Also, we show that, at the same conditions, the current and {{I}\\text{on}}/{{I}\\text{off}} ratio of silicene based spin FET are significantly greater than that of the graphene based one.

Pure detection of the acoustic spin pumping in Pt/YIG/PZT structures

NASA Astrophysics Data System (ADS)

Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Saitoh, Eiji

2014-11-01

The acoustic spin pumping (ASP) stands for the generation of a spin voltage from sound waves in a ferromagnet/paramagnet junction. In this letter, we propose and demonstrate a method for pure detection of the ASP, which enables the separation of sound-wave-driven spin currents from the spin Seebeck effect due to the heating of a sample caused by a sound-wave injection. Our demonstration using a Pt/YIG/PZT sample shows that the ASP signal in this structure measured by a conventional method is considerably offset by the heating signal and that the pure ASP signal is one order of magnitude greater than that reported in the previous study.

A molecular spin-photovoltaic device.

PubMed

Sun, Xiangnan; Vélez, Saül; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Parui, Subir; Zhu, Xiangwei; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

2017-08-18

We fabricated a C 60 fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Kondo Physics at Interfaces in Metallic Non-Local Spin Transport Devices

NASA Astrophysics Data System (ADS)

Leighton, Chris

2015-03-01

Despite the maturity of metallic spintronics there remain large gaps in our understanding of spin transport in metals, particularly with injection of spins across ferromagnetic/non-magnetic (FM/NM) interfaces, and their subsequent diffusion and relaxation. Unresolved issues include the limits of applicability of Elliott-Yafet spin relaxation, quantification of the influence of defects, surfaces, and interfaces on spin relaxation at nanoscopic dimensions, and the importance of magnetic and spin-orbit scattering. The non-local spin-valve is an enabling device in this context as, in addition to offering potentially disruptive applications, it allows for the separation of charge and spin currents. One particularly perplexing issue in metallic non-local spin valves is the widely observed non-monotonicity in the T-dependent spin accumulation, where the spin signal actually decreases at low T, in contrast to simple expectations. In this work, by studying an expanded range of FM/NM combinations (encompassing Ni80Fe20, Ni, Fe, Co, Cu, and Al), we demonstrate that this effect is not a property of a given FM or NM, but rather of the FM/NM pair. The non-monotonicity is in fact strongly correlated with the ability of the FM to form a dilute local magnetic moment in the NM. We show that local moments, resulting in this case from the ppm-level tail of the FM/NM interdiffusion profile, suppress the injected spin polarization and diffusion length via a novel manifestation of the Kondo effect, explaining all observations associated with the low T downturn in spin accumulation. We further show: (a) that this effect can be promoted by thermal annealing, at which point the conventional charge transport Kondo effect is simultaneously detected in the NM, and (b) that this suppression in spin accumulation can be quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer. Important implications for room temperature devices will be discussed. Work supported by: Seagate Technology, NSF MRSEC (DMR-0819885), Marie Curie International Outgoing Fellowship, 7th European Community Framework Programme (No. 299376). Work at SNS, ORNL, supported by DOE. Work in collaboration with: L. O'Brien, J. Watts, D. Spivak, M. Erickson, H. Ambaye, R.J. Goyette, V. Lauter, P.A. Crowell.

Evidence of Spin-Injection-Induced Cooper Pair Breaking in Perovskite Ferromagnet-Insulator-Superconductor Heterostructures via Pulsed Current Measurements

NASA Technical Reports Server (NTRS)

Yeh, N. C.; Samoilov, A. V.; Veasquez, R. P.; Li, Y.

1998-01-01

The effect of spin-polarized currents on the critical current densities of cuprate superconductors is investigated in perovskite ferromagnet-insulator-superconductor heterostructures with a pulsed current technique.

A two-dimensional spin field-effect switch

NASA Astrophysics Data System (ADS)

Casanova, Felix

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The mainstream approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. In our recent work, we demonstrate a radically different approach by engineering a van der Waals heterostructure from atomically thin crystals, and which combines the superior spin transport properties of graphene with the strong SOC of MoS2, a transition metal dichalcogenide with semiconducting properties. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS2 layer with a gate electrode. Our demonstration of a spin field-effect switch using two-dimensional (2D) materials identifies a new route towards spin logic operations for beyond CMOS technology. Furthermore, the van der Waals heterostructure at the core of our experiments opens the path for fundamental research of exotic transport properties predicted for transition metal dichalcogenides, in which electrical spin injection has so far been elusive.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

NASA Astrophysics Data System (ADS)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

NASA Astrophysics Data System (ADS)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

A two-dimensional spin field-effect switch

DOE PAGES

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; ...

2016-11-11

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS 2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS 2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS 2 with a gatemore » electrode. Lastly, our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.« less

Time-domain detection of current controlled magnetization damping in Pt/Ni{sub 81}Fe{sub 19} bilayer and determination of Pt spin Hall angle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganguly, A.; Haldar, A.; Sinha, J.

2014-09-15

The effect of spin torque from the spin Hall effect in Pt/Ni{sub 81}Fe{sub 19} rectangular bilayer film was investigated using time-resolved magneto-optical Kerr microscopy. Current flow through the stack resulted in a linear variation of effective damping up to ±7%, attributed to spin current injection from the Pt into the Ni{sub 81}Fe{sub 19}. The spin Hall angle of Pt was estimated as 0.11 ± 0.03. The modulation of the damping depended on the angle between the current and the bias magnetic field. These results demonstrate the importance of optical detection of precessional magnetization dynamics for studying spin transfer torque due to spinmore » Hall effect.« less

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

NASA Astrophysics Data System (ADS)

Cornelissen, L. J.; Liu, J.; van Wees, B. J.; Duine, R. A.

2018-03-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6 %/mA at T =250 K . Finite element modeling shows that this could be increased to well above 10 %/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Magnetic nano-oscillator driven by pure spin current.

PubMed

Demidov, Vladislav E; Urazhdin, Sergei; Ulrichs, Henning; Tiberkevich, Vasyl; Slavin, Andrei; Baither, Dietmar; Schmitz, Guido; Demokritov, Sergej O

2012-12-01

With the advent of pure-spin-current sources, spin-based electronic (spintronic) devices no longer require electrical charge transfer, opening new possibilities for both conducting and insulating spintronic systems. Pure spin currents have been used to suppress noise caused by thermal fluctuations in magnetic nanodevices, amplify propagating magnetization waves, and to reduce the dynamic damping in magnetic films. However, generation of coherent auto-oscillations by pure spin currents has not been achieved so far. Here we demonstrate the generation of single-mode coherent auto-oscillations in a device that combines local injection of a pure spin current with enhanced spin-wave radiation losses. Counterintuitively, radiation losses enable excitation of auto-oscillation, suppressing the nonlinear processes that prevent auto-oscillation by redistributing the energy between different modes. Our devices exhibit auto-oscillations at moderate current densities, at a microwave frequency tunable over a wide range. These findings suggest a new route for the implementation of nanoscale microwave sources for next-generation integrated electronics.

Disorder induced spin coherence in polyfluorene thin film semiconductors

NASA Astrophysics Data System (ADS)

Miller, Richard G.; van Schooten, Kipp; Malissa, Hans; Waters, David P.; Lupton, John M.; Boehme, Christoph

2014-03-01

Charge carrier spins in polymeric organic semiconductors significantly influence magneto-optoelectronic properties of these materials. In particular, spin relaxation times influence magnetoresistance and electroluminescence. We have studied the role of structural and electronic disorder in polaron spin-relaxation times. As a model polymer, we used polyfluorene, which can exist in two distinct morphologies: an amorphous (glassy) and an ordered (beta) phase. The phases can be controlled in thin films by preparation parameters and verified by photoluminescence spectroscopy. We conducted pulsed electrically detected magnetic resonance (pEDMR) measurements to determine spin-dephasing times by transient current measurements under bipolar charge carrier injection conditions and a forward bias. The measurements showed that, contrary to intuition, spin-dephasing times increase with material disorder. We attribute this behavior to a reduction in hyperfine field strength for carriers in the glassy phase due to increased structural disorder in the hydrogenated side chains, leading to longer spin coherence times. We acknowledge support by the Department of Energy, Office of Basic Energy Sciences under Award #DE-SC0000909.

Tuning Interfacial States Using Organic Molecules as Spin Filters

NASA Astrophysics Data System (ADS)

Deloach, Andrew; Wang, Jingying; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Dougherty, Daniel B.; Jiang, Wei; Liu, Feng

Organic semiconductors are known to have long spin relaxation times which makes them a good candidate for spintronics. However, an issue with these materials is that at metal-organic interfaces there is a conductivity mismatch problem that suppresses spin injection. To overcome this, orbital mixing at the interface can be tuned with an organic spacer layer to promote the formation of spin polarized interface states. These states act as a ``spin filters'' and have been proposed as an explanation for the large tunneling magnetoresistance seen in devices using tris-(8-hydroxyquinolate)-aluminum(Alq3). Here, we show that the spin polarized interface states can be tuned from metallic to resistive by subtle changes in molecular orbitals. This is done using spin polarized scanning tunneling microscopy with three different tris-(8-hydroxyquinolate) compounds: aluminum, chromium, and iron. Differences in d-orbital mixing results in different mechanisms of interfacial coupling, giving rise to metallic or resistive interface states. Supported by the U.S. DoE award No. DE-SC0010324.

Pure spin current injection in hydrogenated graphene structures

NASA Astrophysics Data System (ADS)

Zapata-Peña, Reinaldo; Mendoza, Bernardo S.; Shkrebtii, Anatoli I.

2017-11-01

We present a theoretical study of spin-velocity injection (SVI) of a pure spin current (PSC) induced by linearly polarized light that impinges normally on the surface of two 50% hydrogenated noncentrosymmetric two-dimensional (2D) graphene structures. The first structure, labeled Up and also known as graphone, is hydrogenated only on one side, and the second, labeled Alt, is 25% hydrogenated at both sides. The hydrogenation opens an energy gap on both structures. The PSC formalism has been developed in the length gauge perturbing Hamiltonian, and includes, through the single-particle density matrix, the excited coherent superposition of the spin-split conduction bands inherent to the noncentrosymmetric nature of the structures considered in this work. We analyze two possibilities: in the first, the spin is fixed along a chosen direction, and the resulting SVI is calculated; in the second, we choose the SVI direction along the surface plane, and calculate the resulting spin orientation. This is done by changing the energy ℏ ω and polarization angle α of the incoming light. The results are calculated within a full electronic band structure scheme using the density functional theory (DFT) in the local density approximation (LDA). The maxima of the spin velocities are reached when ℏ ω =0.084 eV and α =35∘ for the Up structure, and ℏ ω =0.720 eV and α =150∘ for the Alt geometry. We find a speed of 668 and 645 km/s for the Up and the Alt structures, respectively, when the spin points perpendicularly to the surface. Also, the response is maximized by fixing the spin-velocity direction along a high-symmetry axis, obtaining a speed of 688 km/s with the spin pointing at 13∘ from the surface normal, for the Up, and 906 km/s and the spin pointing at 60∘ from the surface normal, for the Alt system. These speed values are orders of magnitude larger than those of bulk semiconductors, such as CdSe and GaAs, thus making the hydrogenated graphene structures excellent candidates for spintronics applications.

Pairing versus phase coherence of doped holes in distinct quantum spin backgrounds

NASA Astrophysics Data System (ADS)

Zhu, Zheng; Sheng, D. N.; Weng, Zheng-Yu

2018-03-01

We examine the pairing structure of holes injected into two distinct spin backgrounds: a short-range antiferromagnetic phase versus a symmetry protected topological phase. Based on density matrix renormalization group (DMRG) simulation, we find that although there is a strong binding between two holes in both phases, phase fluctuations can significantly influence the pair-pair correlation depending on the spin-spin correlation in the background. Here the phase fluctuation is identified as an intrinsic string operator nonlocally controlled by the spins. We show that while the pairing amplitude is generally large, the coherent Cooper pairing can be substantially weakened by the phase fluctuation in the symmetry-protected topological phase, in contrast to the short-range antiferromagnetic phase. It provides an example of a non-BCS mechanism for pairing, in which the paring phase coherence is determined by the underlying spin state self-consistently, bearing an interesting resemblance to the pseudogap physics in the cuprate.

Spintronics Based on Topological Insulators

NASA Astrophysics Data System (ADS)

Fan, Yabin; Wang, Kang L.

2016-10-01

Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

Electric field induced spin-polarized current

DOEpatents

Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

2006-05-02

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

Control of exciton spin statistics through spin polarization in organic optoelectronic devices

PubMed Central

Wang, Jianpu; Chepelianskii, Alexei; Gao, Feng; Greenham, Neil C.

2012-01-01

Spintronics based on organic semiconductor materials is attractive because of its rich fundamental physics and potential for device applications. Manipulating spins is obviously important for spintronics, and is usually achieved by using magnetic electrodes. Here we show a new approach where spin populations can be controlled primarily by energetics rather than kinetics. We find that exciton spin statistics can be substantially controlled by spin-polarizing carriers after injection using high magnetic fields and low temperatures, where the Zeeman energy is comparable with the thermal energy. By using this method, we demonstrate that singlet exciton formation can be suppressed by up to 53% in organic light-emitting diodes, and the dark conductance of organic photovoltaic devices can be increased by up to 45% due to enhanced formation of triplet charge-transfer states, leading to less recombination to the ground state. PMID:23149736

Spin transport in lateral structures with semiconducting channel

NASA Astrophysics Data System (ADS)

Zainuddin, Abu Naser

Spintronics is an emerging field of electronics with the potential to be used in future integrated circuits. Spintronic devices are already making their mark in storage technologies in recent times and there are proposals for using spintronic effects in logic technologies as well. So far, major improvement in spintronic effects, for example, the `spin-valve' effect, is being achieved in metals or insulators as channel materials. But not much progress is made in semiconductors owing to the difficulty in injecting spins into them, which has only very recently been overcome with the combined efforts of many research groups around the world. The key motivations for semiconductor spintronics are their ease in integration with the existing semiconductor technology along with the gate controllability. At present semiconductor based spintronic devices are mostly lateral and are showing a very poor performance compared to their metal or insulator based vertical counterparts. The objective of this thesis is to analyze these devices based on spin-transport models and simulations. At first a lateral spin-valve device is modeled with the spin-diffusion equation based semiclassical approach. Identifying the important issues regarding the device performance, a compact circuit equivalent model is presented which would help to improve the device design. It is found that the regions outside the current path also have a significant influence on the device performance under certain conditions, which is ordinarily neglected when only charge transport is considered. Next, a modified spin-valve structure is studied where the spin signal is controlled with a gate in between the injecting and detecting contacts. The gate is used to modulate the rashba spin-orbit coupling of the channel which, in turn, modulates the spin-valve signal. The idea of gate controlled spin manipulation was originally proposed by Datta and Das back in 1990 and is called 'Datta-Das' effect. In this thesis, we have extended the model described in the original proposal to include the influence of channel dimensions on the nature of electron flow and the contact dimensions on the magnitude and phase of the spin-valve signal. In order to capture the spin-orbit effect a non-equilibrium Green's function (NEGF) based quantum transport model for spin-valve device have been developed which is also explained with simple theoretical treatment based on stationary phase approximation. The model is also compared against a recent experiment that demonstrated such gate modulated spin-valve effect. This thesis also evaluates the possibility of gate controlled magnetization reversal or spin-torque effect as a means to validate this, so called, 'Datta-Das' effect on a more solid footing. Finally, the scope for utilizing topological insulator material in semiconductor spintronics is discussed as a possible future work for this thesis.

Spin-dependent transport behavior in C{sub 60} and Alq{sub 3} based spin valves with a magnetite electrode (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xianmin, E-mail: xmzhang@wpi-aimr.tohoku.ac.jp; Mizukami, Shigemi; Ma, Qinli

2014-05-07

The spin-dependent transport behavior in organic semiconductors (OSs) is generally observed at low temperatures, which likely results from poor spin injection efficiency at room temperature from the ferromagnetic metal electrodes to the OS layer. Possible reasons for this are the low Curie temperature and/or the small spin polarization efficiency for the ferromagnetic electrodes used in these devices. Magnetite has potential as an advanced candidate for use as the electrode in spintronic devices, because it can achieve 100% spin polarization efficiency in theory, and has a high Curie temperature (850 K). Here, we fabricated two types of organic spin valves using magnetitemore » as a high efficiency electrode. C{sub 60} and 8-hydroxyquinoline aluminum (Alq{sub 3}) were employed as the OS layers. Magnetoresistance ratios of around 8% and over 6% were obtained in C{sub 60} and Alq{sub 3}-based spin valves at room temperature, respectively, which are two of the highest magnetoresistance ratios in organic spin valves reported thus far. The magnetoresistance effect was systemically investigated by varying the thickness of the Alq{sub 3} layer. Moreover, the temperature dependence of the magnetoresistance ratios for C{sub 60} and Alq{sub 3}-based spin valves were evaluated to gain insight into the spin-dependent transport behavior. This study provides a useful method in designing organic spin devices operated at room temperature.« less

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Excitation of propagating spin waves by pure spin current

NASA Astrophysics Data System (ADS)

Demokritov, Sergej

Recently it was demonstrated that pure spin currents can be utilized to excite coherent magnetization dynamics, which enables development of novel magnetic nano-oscillators. Such oscillators do not require electric current flow through the active magnetic layer, which can help to reduce the Joule power dissipation and electromigration. In addition, this allows one to use insulating magnetic materials and provides an unprecedented geometric flexibility. The pure spin currents can be produced by using the spin-Hall effect (SHE). However, SHE devices have a number of shortcomings. In particular, efficient spin Hall materials exhibit a high resistivity, resulting in the shunting of the driving current through the active magnetic layer and a significant Joule heating. These shortcomings can be eliminated in devices that utilize spin current generated by the nonlocal spin-injection (NLSI) mechanism. Here we review our recent studies of excitation of magnetization dynamics and propagating spin waves by using NLSI. We show that NLSI devices exhibit highly-coherent dynamics resulting in the oscillation linewidth of a few MHz at room temperature. Thanks to the geometrical flexibility of the NLSI oscillators, one can utilize dipolar fields in magnetic nano-patterns to convert current-induced localized oscillations into propagating spin waves. The demonstrated systems exhibit efficient and controllable excitation and directional propagation of coherent spin waves characterized by a large decay length. The obtained results open new perspectives for the future-generation electronics using electron spin degree of freedom for transmission and processing of information on the nanoscale.

Modification of the magnetization dynamics of a NiFe nanodot due to thermal spin injection

NASA Astrophysics Data System (ADS)

Asam, Nagarjuna; Yamanoi, Kazuto; Kimura, Takashi

2018-06-01

An array of NiFe nanodots has been prepared on a Cu/CoFeAl film. Since a thermal spin current is expected to be excited owing to a large spin-dependent Seebeck coefficient for the CoFeAl, we investigate the magnetization dynamics of the NiFe dots under the temperature gradient along the vertical direction. By using vector network analyzer measurements, we have demonstrated that the temperature gradient produces modulations of the frequency of ferromagnetic resonance and the linewidth of the resonance spectra. The observed parabolic dependences are well explained by the damping-like and field-like components of spin transfer torque.

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

NASA Astrophysics Data System (ADS)

Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

2012-09-01

We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

Antiferromagnetic resonance excited by oscillating electric currents

NASA Astrophysics Data System (ADS)

Sluka, Volker

2017-12-01

In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can be excited using the inverse spin-Hall effect in a system consisting of an antiferromagnetic insulator coupled to a normal-metal waveguide. The time-dependent interplay between spin torque, ac spin accumulation, and magnetic degrees of freedom is studied. It is found that the dynamics of the antiferromagnet affects the frequency-dependent conductivity of the normal metal. Further, a comparison is made between spin-current-induced and Oersted-field-induced excitation under the condition of constant power injection.

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor.

PubMed

Cornelissen, L J; Liu, J; van Wees, B J; Duine, R A

2018-03-02

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6%/mA at T=250  K. Finite element modeling shows that this could be increased to well above 10%/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Controlling Gilbert damping in a YIG film using nonlocal spin currents

NASA Astrophysics Data System (ADS)

Haidar, M.; Dürrenfeld, P.; Ranjbar, M.; Balinsky, M.; Fazlali, M.; Dvornik, M.; Dumas, R. K.; Khartsev, S.; Åkerman, J.

2016-11-01

We demonstrate the control of Gilbert damping in 65-nm-thick yttrium iron garnet (YIG) films using a spin-polarized current generated by a direct current through a nanocontact, spin filtered by a thin Co layer. The magnetodynamics of both the YIG and the Co layers can be excited by a pulse-modulated microwave current injected through the nanocontact and the response detected as a lock-in amplified voltage over the device. The spectra show three clear peaks, two associated with the ferromagnetic resonance (FMR) in each layer, and an additional Co mode with a higher wave vector proportional to the inverse of the nanocontact diameter. By varying the sign and magnitude of the direct nanocontact current, we can either increase or decrease the linewidth of the YIG FMR peak consistent with additional positive or negative damping being exerted by the nonlocal spin current injected into the YIG film. Our nanocontact approach thus offers an alternative route in the search for auto-oscillations in YIG films.

Mesoscopic spin Hall effect in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities, appeared in 1970s, it is only in the past few years that advances in optical detection of nonequilibrium magnetization in semiconductors have made possible the detection of such extrinsic SHE in groundbreaking experiments. The experimental pursuits of SHE have, in fact, been largely motivated by very recent theoretical speculations for several order of magnitude greater spin Hall currents driven by intrinsic SO mechanisms due to SO couplings existing not only around the impurity but also throughout the sample. The homogeneous intrinsic SO couplings are capable of spin-splitting the band structure and appear as momentum-dependent magnetic field within the sample which causes spin non-conservation due to precession of injected spins which are not in the eigenstates of the corresponding Zeeman term. Besides deepening our understanding of subtle relativistic effects in solids, SHE has attracted a lot of attention since it offers an all-electrical way of generating pure spin currents in semiconductors. (Abstract shortened by UMI.)

Discrimination between spin-dependent charge transport and spin-dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance

NASA Astrophysics Data System (ADS)

Kavand, Marzieh; Baird, Douglas; van Schooten, Kipp; Malissa, Hans; Lupton, John M.; Boehme, Christoph

2016-08-01

Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is not straightforward to differentiate between pure single-carrier spin-dependent transport processes which control the current and therefore the electroluminescence, and spin-dependent electron-hole recombination which determines the electroluminescence yield and in turn modulates the current. We therefore investigate the correlation between the dynamics of spin-dependent electric current and spin-dependent electroluminescence in two derivatives of the conjugated polymer poly(phenylene-vinylene) using simultaneously measured pulsed electrically detected (pEDMR) and optically detected (pODMR) magnetic resonance spectroscopy. This experimental approach requires careful analysis of the transient response functions under optical and electrical detection. At room temperature and under bipolar charge-carrier injection conditions, a correlation of the pEDMR and the pODMR signals is observed, consistent with the hypothesis that the recombination currents involve spin-dependent electronic transitions. This observation is inconsistent with the hypothesis that these signals are caused by spin-dependent charge-carrier transport. These results therefore provide no evidence that supports earlier claims that spin-dependent transport plays a role for room-temperature magnetoresistance effects. At low temperatures, however, the correlation between pEDMR and pODMR is weakened, demonstrating that more than one spin-dependent process influences the optoelectronic materials' properties. This conclusion is consistent with prior studies of half-field resonances that were attributed to spin-dependent triplet exciton recombination, which becomes significant at low temperatures when the triplet lifetime increases.

EVOLUTION OF SPINNING AND BRAIDING HELICITY FLUXES IN SOLAR ACTIVE REGION NOAA 10930

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravindra, B.; Yoshimura, Keiji; Dasso, Sergio, E-mail: ravindra@iiap.res.in, E-mail: yosimura@solar.physics.montana.edu, E-mail: dasso@df.uba.ar

2011-12-10

The line-of-sight magnetograms from Solar Optical Telescope Narrowband Filter Imager observations of NOAA Active Region 10930 have been used to study the evolution of spinning and braiding helicities over a period of five days starting from 2006 December 9. The north (N) polarity sunspot was the follower and the south (S) polarity sunspot was the leader. The N-polarity sunspot in the active region was rotating in the counterclockwise direction. The rate of rotation was small during the first two days of observations and it increased up to 8 Degree-Sign hr{sup -1} on the third day of the observations. On themore » fourth and fifth days it remained at 4 Degree-Sign hr{sup -1} with small undulations in its magnitude. The sunspot rotated about 260 Degree-Sign in the last three days. The S-polarity sunspot did not complete more than 20 Degree-Sign in five days. However, it changed its direction of rotation five times over a period of five days and injected both the positive and negative type of spin helicity fluxes into the corona. Through the five days, both the positive and negative sunspot regions injected equal amounts of spin helicity. The total injected helicity is predominantly negative in sign. However, the sign of the spin and braiding helicity fluxes computed over all the regions were reversed from negative to positive five times during the five-day period of observations. The reversal in spinning helicity flux was found before the onset of the X3.4-class flare, too. Though, the rotating sunspot has been observed in this active region, the braiding helicity has contributed more to the total accumulated helicity than the spinning helicity. The accumulated helicity is in excess of -7 Multiplication-Sign 10{sup 43} Mx{sup 2} over a period of five days. Before the X3.4-class flare that occurred on 2006 December 13, the rotation speed and spin helicity flux increased in the S-polarity sunspot. Before the flare, the total injected helicity was larger than -6 Multiplication-Sign 10{sup 43} Mx{sup 2}. The observed reversal in the sign of spinning and braiding helicity fluxes could be the signature of the emergence of a twisted flux tube, which acquires the writhe of an opposite sign. The magnetic cloud associated with the ejected mass has carried about -7 Multiplication-Sign 10{sup 41} Mx{sup 2} of helicity. A time integration of helicity flux of about 1.2 hr integrated backward in time of the observation of the coronal mass ejection is sufficient for this event.« less

Advances in graphene spintronics

NASA Astrophysics Data System (ADS)

van Wees, Bart

I will give an overview of the status of graphene spintronics, from both scientific as technological perspectives. In the introduction I will show that (single) layer graphene is the ideal host for electronic spins, allowing spin transport by diffusion over distances exceeding 20 micrometers at room temperature. I will show how by the use of carrier drift, induced by charge currents, effective spin relaxation lengths of 90 micrometer can be obtained in graphene encapsulated between boron-nitride layers. This also allows the controlled flow and guiding of spin currents, opening new avenues for spin logic devices based on lateral architectures. By preparing graphene on top of a ferromagnetic insulator (yttrium iron garnet (YIG)) we have shown that we can induce an exchange interaction in the graphene, thus effectively making the graphene magnetic. This allows for new ways to induce and control spin precession for new applications. Finally I will show how, by using two-layer BN tunnel barriers, spins can be injected from a ferromagnet into graphene with a spin polarization which can be tuned continuously from -80% to 40%, using a bias range from -0.3V to 0.3V across the barrier. These unique record values of the spin polarization are not yet understood, but they highlight the potential of Van der Waals stacking of graphene and related 2D materials for spintronics.

Novel diluted magnetic semiconductor materials based on zinc oxide

NASA Astrophysics Data System (ADS)

Chakraborti, Deepayan

The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor (DMS) materials system which displays ferromagnetism above room temperature and to understand the origin of long-range ferromagnetic ordering in these systems. Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. For these devices we require a high efficiency of spin current injection at room temperature. Diluted magnetic semiconductors (DMS) can serve this role, but they should not only display room temperature ferromagnetism (RTFM) but also be capable of generating spin polarized carriers. Transition metal doped ZnO has proved to be a potential candidate as a DMS showing RTFM. The origin of ferromagnetic ordering in ZnO is still under debate. However, the presence of magnetic secondary phases, composition fluctuations and nanoclusters could also explain the observation of ferromagnetism in the DMS samples. This encouraged us to investigate Cu-doped(+ spin in the 2+ valence state) ZnO system as a probable candidate exhibiting RTFM because neither metallic Cu nor its oxides (Cu2O or CuO) are ferromagnetic. The role of defects and free carriers on the ferromagnetic ordering of Cu-doped ZnO thin films was studied to ascertain the origin of ferromagnetism in this system. A novel non-equilibrium Pulsed Laser Deposition technique has been used to grow high quality epitaxial thin films of Cu:ZnO and (Co,Cu):ZnO on c-plane Sapphire by domain matching epitxay. Both the systems showed ferromagnetic ordering above 300K but Cu ions showed a much stronger ferromagnetic ordering than Co, especially at low concentrations (1-2%) of Cu where we realized near 100% polarization. But, the incorporation of Cu resulted in a 2-order of magnitude rise in the resistivity from 10-1 to 101 Ohm cm which can prove to be detrimental to the injection of polarized electrons. In order to decrease the resistivity and to understand the role of free carriers in mediating the ferromagnetic ordering, the Cu-doped ZnO films were co-doped with an n-type dopant like Al which increased the free carriers concentration by 3 orders of magnitude from 1017 to 1020 cm -3 without significantly altering the near 100% spin polarization in the Cu:ZnO system. This lack of correlation between free carrier concentration and the magnetic moment implied that a free carrier mediated exchange does not stabilize the long range ferromagnetic ordering. A reduction in the number of oxygen vacancies brought about by high temperature oxygen annealing had a large degrading effect on the ferromagnetism by reducing the total saturation magnetization by almost an order of magnitude. This strong dependence of magnetization on vacancy concentration and the corresponding weak relationship with free carriers pointed towards a defect mediated mechanism, such as a bound magnetic polaron mediated exchange as being responsible for stabilizing the ferromagnetic ordering in these systems. However, a BMP mechanism would not guarantee a strong coupling between the free carriers and the localized spins to produce spin-polarized current. To investigate this we have fabricated spin valve type device structures where a nonmagnetic ZnO layer was sandwiched between two ferromagnetic (Cu,Al):ZnO layers allowing us to study spin polarized carrier injection across the nonmagnetic semiconductor gap. Initial results have shown evidence of spin polarized carrier injection across the nonmagnetic semiconductor layer even at 300K. Hence, this work demonstrates that the (Cu,Al):ZnO system may become a viable solution for spin injection into spintronic devices.

Spin-coating: A new approach for improving dispersion of cellulose nanocrystals and mechanical properties of poly (lactic acid) composites.

PubMed

Shojaeiarani, Jamileh; Bajwa, Dilpreet S; Stark, Nicole M

2018-06-15

This study systematically evaluated the influence of masterbatch preparation techniques, solvent casting and spin-coating methods, on composite properties. Composites were manufactured by combining CNCs masterbatches and PLA resin using twin screw extruder followed by injection molding. Different microscopy techniques were used to investigate the dispersion of CNCs in masterbatches and composites. Thermal, thermomechanical, and mechanical properties of composites were evaluated. Scanning electron microscopy (SEM) images showed superior dispersion of CNCs in spin-coated masterbatches compared to solvent cast masterbatches. At lower CNCs concentrations, both SEM and optical microscope images confirmed more uniform CNCs dispersion in spin-coated composites than solvent cast samples. Degree of crystallinity of PLA exhibited a major enhancement by 147% and 380% in solvent cast and spin-coated composites, respectively. Spin-coated composites with lower CNCs concentration exhibited a noticeable improvement in mechanical properties. However, lower thermal characteristics in spin-coated composites were observed, which could be attributed to the residual solvents in masterbatches. Copyright © 2018 Elsevier Ltd. All rights reserved.

Rashba quantum wire: exact solution and ballistic transport.

PubMed

Perroni, C A; Bercioux, D; Ramaglia, V Marigliano; Cataudella, V

2007-05-08

The effect of Rashba spin-orbit interaction in quantum wires with hard-wall boundaries is discussed. The exact wavefunction and eigenvalue equation are worked out, pointing out the mixing between the spin and spatial parts. The spectral properties are also studied within perturbation theory with respect to the strength of the spin-orbit interaction and diagonalization procedure. A comparison is made with the results of a simple model, the two-band model, that takes account only of the first two sub-bands of the wire. Finally, the transport properties within the ballistic regime are analytically calculated for the two-band model and through a tight-binding Green function for the entire system. Single and double interfaces separating regions with different strengths of spin-orbit interaction are analysed by injecting carriers into the first and the second sub-band. It is shown that in the case of a single interface the spin polarization in the Rashba region is different from zero, and in the case of two interfaces the spin polarization shows oscillations due to spin-selective bound states.

Anomalous modulation of spin torque-induced ferromagnetic resonance caused by direct currents in permalloy/platinum bilayer thin films

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-01-01

We systematically investigated the spin-torque ferromagnetic resonance (ST-FMR) in permalloy/Pt bilayer thin films under bias direct currents. According to the conventional ST-FMR theory, the half widths of the resonant peaks in the spectra can be modulated by bias currents, which give a reliable value of the spin injection efficiency of the spin Hall effect. On the other hand, the symmetric components of the spectra show an unexpected strong bias current dependence, while the asymmetric components are free from the modulation. These findings suggest that some contributions are missing in the ST-FMR analysis of the ferromagnetic/nonmagnetic metal bilayer thin films.

Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions.

PubMed

Song, Yang; Dery, Hanan

2014-07-25

We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical transport properties since such systems are halfmetallic in nature and promise the possibilities of spin injection and detection. The study was extended to dilute magnetic semiconducting nanowire system of Cd1-xMnxTe which possess both magnetic and semiconducting properties. In summary, the studies made in this thesis will offer a new understanding of spin transport behavior for future technology.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Spin-dependent transport phenomena in organic semiconductors

NASA Astrophysics Data System (ADS)

Bergeson, Jeremy D.

Thin-film organic semiconductors transport can have an anomalously high sensitivity to low magnetic fields. Such a response is unexpected considering that thermal fluctuation energies are greater than the energy associated with the intrinsic spin of charge carriers at a modest magnetic field of 100 Oe by a factor of more than 104 at room temperature and is still greater by 102 even at liquid helium temperatures. Nevertheless, we report experimental characterization of (1) spin-dependent injection, detection and transport of spin-polarized current through organic semiconductors and (2) the influence of a magnetic field on the spin dynamics of recombination-limited transport. The first focus of this work was accomplished by fabricating basic spin-valve devices consisting of two magnetic layers spatially separated by a nonmagnetic organic semiconductor. The spin-valve effect is a change in electrical resistance due to the magnetizations of the magnetic layers changing from parallel to antiparallel alignment, or vice versa. The conductivities of the metallic contacts and that of the semiconductor differed by many orders of magnitude, which inhibited the injection of a spin-polarized current from the magnet into the nonmagnet. We successfully overcame the problem of conductivity mismatch by inserting ultra-thin tunnel barriers at the metal/semiconductor interfaces which aided in yielding a ˜20% spin-valve effect at liquid helium temperatures and the effect persisted up to 150 K. We built on this achievement by constructing spin valves where one of the metallic contacts was replaced by the organic-based magnetic semiconductor vanadium tetracyanoethylene (V[TCNE]2). At 10 K these devices produced the switching behavior of the spin-valve effect. The second focus of this work was the bulk magnetoresistance (MR) of small molecule, oligomer and polymer organic semiconductors in thin-film structures. At room temperature the resistance can change up to 8% at 100 Oe and 15% at 1000 Oe. Depending on parameters such as temperature, layer thickness, or applied voltage, the resistance of these materials may increase or decrease as a function of field. A model for this phenomenon, termed magnetoresistance by the interconversion of singlets and triplets (MIST), is developed to account for this anomalous behavior. This model predicts that increasing the spin-orbit coupling in the organic semiconductor should decrease the magnitude of the MR. In an experiment where the small molecule Alq3 was doped with phosphorescent sensitizers, to increase the spin-orbit coupling, the MR was observed to decrease by an order of magnitude or more, depending on the doping. In addition to low-magnetic-field effects, we show the experimental observation of high-field MR in devices with and without magnetic contacts. To the best of our knowledge, we are the first to report (1) a tunnel-barrier-assisted spin-valve effect into an organic semiconductor using partially polarized metallic magnetic electrodes and (2) an experimental characterization of the central impact of the hyperfine interaction and spin-orbit coupling on MR in organic semiconductors.

Energy efficient hybrid computing systems using spin devices

NASA Astrophysics Data System (ADS)

Sharad, Mrigank

Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Electric field controlled spin interference in a system with Rashba spin-orbit coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciftja, Orion, E-mail: ogciftja@pvamu.edu

There have been intense research efforts over the last years focused on understanding the Rashba spin-orbit coupling effect from the perspective of possible spintronics applications. An important component of this line of research is aimed at control and manipulation of electron’s spin degrees of freedom in semiconductor quantum dot devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction in a two-dimensional electron system embedded in a host semiconducting material that lacks inversion-symmetry. This way, the Rashba spin-orbit coupling effect may potentially lead to fabrication of amore » new generation of spintronic devices where control of spin, thus magnetic properties, is achieved via an electric field and not a magnetic field. In this work we investigate theoretically the electron’s spin interference and accumulation process in a Rashba spin-orbit coupled system consisting of a pair of two-dimensional semiconductor quantum dots connected to each other via two conducting semi-circular channels. The strength of the confinement energy on the quantum dots is tuned by gate potentials that allow “leakage” of electrons from one dot to another. While going through the conducting channels, the electrons are spin-orbit coupled to a microscopically generated electric field applied perpendicular to the two-dimensional system. We show that interference of spin wave functions of electrons travelling through the two channels gives rise to interference/conductance patterns that lead to the observation of the geometric Berry’s phase. Achieving a predictable and measurable observation of Berry’s phase allows one to control the spin dynamics of the electrons. It is demonstrated that this system allows use of a microscopically generated electric field to control Berry’s phase, thus, enables one to tune the spin-dependent interference pattern and spintronic properties with no need for injection of spin-polarized electrons.« less

Spin-injection optical pumping of molten cesium salt and its NMR diagnosis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishikawa, Kiyoshi

2015-07-15

Nuclear spin polarization of cesium ions in the salt was enhanced during optical pumping of cesium vapor at high magnetic field. Significant motional narrowing and frequency shift of NMR signals were observed by intense laser heating of the salt. When the hyperpolarized salt was cooled by blocking the heating laser, the signal width and frequency changed during cooling and presented the phase transition from liquid to solid. Hence, we find that the signal enhancement is mostly due to the molten salt and nuclear spin polarization is injected into the salt efficiently in the liquid phase. We also show that opticalmore » pumping similarly induces line narrowing in the solid phase. The use of powdered salt provided an increase in effective surface area and signal amplitude without glass wool in the glass cells.« less

Dynamics of quantum tomography in an open system

NASA Astrophysics Data System (ADS)

Uchiyama, Chikako

2015-06-01

In this study, we provide a way to describe the dynamics of quantum tomography in an open system with a generalized master equation, considering a case where the relevant system under tomographic measurement is influenced by the environment. We apply this to spin tomography because such situations typically occur in μSR (muon spin rotation/relaxation/resonance) experiments where microscopic features of the material are investigated by injecting muons as probes. As a typical example to describe the interaction between muons and a sample material, we use a spin-boson model where the relevant spin interacts with a bosonic environment. We describe the dynamics of a spin tomogram using a time-convolutionless type of generalized master equation that enables us to describe short time scales and/or low-temperature regions. Through numerical evaluation for the case of Ohmic spectral density with an exponential cutoff, a clear interdependency is found between the time evolution of elements of the density operator and a spin tomogram. The formulation in this paper may provide important fundamental information for the analysis of results from, for example, μSR experiments on short time scales and/or in low-temperature regions using spin tomography.

Evaluating Graphene as a Channel Material in Spintronic Logic Devices

NASA Astrophysics Data System (ADS)

Anugrah, Yoska

Spintronics, a class of devices that exploit the spin properties of electrons in addition to the charge properties, promises the possibility for nonvolatile logic and memory devices that operate at low power. Graphene is a material in which the spin orientation of electrons can be conserved over a long distance, which makes it an attractive channel material in spintronics devices. In this dissertation, the properties of graphene that are interesting for spintronics applications are explored. A robust fabrication process is described for graphene spin valves using Al2O3 tunnel tunnel barriers and Co ferromagnetic contacts. Spin transport was characterized in both few-layer exfoliated and single-layer graphene, and spin diffusion lengths and spin relaxation times were extracted using the nonlocal spin valve geometry and Hanle measurements. The effect of input-output asymmetry on the spin transport was investigated. The effect of an applied drift electric field on spin transport was investigated and the spin diffusion length was found to be tunable by a factor of 8X (suppressed to 1.6 microm and enhanced to 13 microm from the intrinsic length of 4.6 microm using electric field of +/-1800 V/cm). A mechanism to induce asymmetry without excess power dissipation is also described which utilizes a double buried-gate structure to tune the Fermi levels on the input and output sides of a graphene spin logic device independently. It was found that different spin scattering mechanisms were at play in the two halves of a small graphene strip. This suggests that the spin properties of graphene are strongly affected by its local environment, e.g. impurities, surface topography, defects. Finally, two-dimensional materials beyond graphene have been explored as spin channels. One such material is phosphorene, which has low spin-orbit coupling and high mobility, and the interface properties of ferromagnets (cobalt and permalloy) with this material were explored. This work could potentially enable spin injection without the need for a physical tunnel barrier to solve the conductivity mismatch problem inherent to graphene.

Spin injection in n-type resonant tunneling diodes.

PubMed

Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

2012-10-25

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

NASA Astrophysics Data System (ADS)

Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

2016-10-01

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (< 100 psec), a regime that is not accessible in semiconductors using traditional Hanle techniques. The measurements were carried out on epitaxial Heusler alloy (Co2FeSi or Co2MnSi)/n-GaAs heterostructures. Lateral spin valve devices were fabricated by electron beam and photolithography. We compare measurements carried out by the new FMR-based technique with traditional non-local and three-terminal Hanle measurements. A full model appropriate for the measurements will be introduced, and a broader discussion in the context of spin pumping experimenments will be included in the talk. The new technique provides a simple and powerful means for detecting spin accumulation at high temperatures. Reference: C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

NASA Astrophysics Data System (ADS)

Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

2016-10-01

Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, M.; Laczkowski, P.; Vergnaud, C.

2015-02-28

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputteringmore » deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene.« less

Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

NASA Astrophysics Data System (ADS)

Kallaher, Raymond L.

This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to those characteristics found in previous reported work on doped EuS crystals. In particular, the magnetic switching behavior of individual micro-fabricated EuS structures was investigated to determine what types of spintronic devices EuS is best suited for. These studies found that the crystalline anisotropy of EuS dominates the switching behavior in EuS thin film structures with minimum feature sizes greater than ˜5 mum. This, in conjunction with the relatively high resistance of junctions between EuS and semiconductors, restricts the use of two tandem EuS electrodes in all semiconductor spintronic devices that require independently switching ferromagnetic electrodes. Spin transport studies in InAs 2DES are particularly interesting because of the heterostructure's high electron mobility and tunable spin-orbit interactions. Detailed measurements of the electrical transport characteristics across the heterojunction formed between EuS and InAs were taken in order to investigate the spin transport characteristics across the junction. These measurements show that the electrical transport across the heterojunction, below the ferromagnetic transition temperature, is directly related to the magnetization of the EuS layer and thus the transport is dominated by the spin-dependent Schottky barrier formed in EuS. Using a simple theory developed for these junctions, the magnitude of the change in barrier height---half the Zeeman splitting of the conduction band in EuS---as found to be ˜0.22 eV. The electrical transport measurements of the heterojunction between EuS and InAs at temperatures well above the ferromagnetic transition temperature of EuS shows that there are at least two separate scattering mechanisms in these junctions. As expected, critical scattering is the dominate scattering mechanism in the strongly paramagnetic regime; however, unexpectedly, the data show that critical scattering is not the dominate mechanism at temperatures greater than ˜100 K. The high temperature electrical transport measurements of the EuS/InAs heterojunction, in conjunction with low temperature zero-bias conductance measurements on junctions between EuS and gold (Au), suggest that there exists an interfacial layer in series with the magnetic Schottky barrier in these EuS junctions. This interfacial layer is modeled and explained as resulting from a rather high concentration of defects at the interface between EuS and the counter electrode.

Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

NASA Astrophysics Data System (ADS)

Aji, J. R. P.; Kusumandari; Purnama, B.

2018-03-01

The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

Intrinsic superspin Hall current

NASA Astrophysics Data System (ADS)

Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

2017-09-01

We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Optimization of the AGS superconducting helical partial snake strength.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin,F.; Huang, H.; Luccio, A.U.

2008-06-23

Two helical partial snakes, one super-conducting (a.k.a cold snake) and one normal conducting (a.k.a warm snake), have preserved the polarization of proton beam up to 65% in the Brookhaven Alternating Gradient Synchrotron (AGS) at the extraction energy from 85% at injection. In order to overcome spin resonances, stronger partial snakes would be required. However, the stronger the partial snake, the more the stable spin direction tilted producing a stronger horizontal intrinsic resonance. The balance between increasing the spin tune gap generated by the snakes and reducing the tilted stable spin direction has to be considered to maintain the polarization. Becausemore » the magnetic field of the warm snake has to be a constant, only the cold snake with a maximum 3T magnetic field can be varied to find out the optimum snake strength. This paper presents simulation results by spin tracking with different cold snake magnetic fields. Some experimental data are also analyzed.« less

Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

NASA Astrophysics Data System (ADS)

Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

2014-03-01

In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

Theory of Magnetic Bipolar Transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor; Fabian, Jaroslav; Das Sarma, S.

2003-03-01

We introduce the concept of a magnetic bipolar transistor (MBT) (J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639.), which can be realized using already available materials. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin. If a base is a ferromagnetic semiconductor we suggest several methods for using spin-polarized bipolar transport (I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. f 88, 066603 (2002); J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B f 66, 165301 (2002).) to manipulate semiconductor ferromagnetism.

Spin injection in n-type resonant tunneling diodes

PubMed Central

2012-01-01

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers. PMID:23098559

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

NASA Astrophysics Data System (ADS)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Boltzmann sampling for an XY model using a non-degenerate optical parametric oscillator network

NASA Astrophysics Data System (ADS)

Takeda, Y.; Tamate, S.; Yamamoto, Y.; Takesue, H.; Inagaki, T.; Utsunomiya, S.

2018-01-01

We present an experimental scheme of implementing multiple spins in a classical XY model using a non-degenerate optical parametric oscillator (NOPO) network. We built an NOPO network to simulate a one-dimensional XY Hamiltonian with 5000 spins and externally controllable effective temperatures. The XY spin variables in our scheme are mapped onto the phases of multiple NOPO pulses in a single ring cavity and interactions between XY spins are implemented by mutual injections between NOPOs. We show the steady-state distribution of optical phases of such NOPO pulses is equivalent to the Boltzmann distribution of the corresponding XY model. Estimated effective temperatures converged to the setting values, and the estimated temperatures and the mean energy exhibited good agreement with the numerical simulations of the Langevin dynamics of NOPO phases.

Electrical Spin-Injection into Silicon and Spin FET

DTIC Science & Technology

2010-02-18

differential conductance ( NDC ), which saw the limelight with the realization of the Esaki tunneling diode, had been predicted and observed to occur in a...collector current of a tunneling emitter bipolar transistor, i.e., negative differential transconductance NDTC. Gate controlled NDC had been observed in...measurement and simulation results are relevant as well for other NDC geometries such as FET style tunnel transistors since they offer crucial

Spin-Polarized Tunneling at Interfaces Between Oxides and Metals or Semiconductors

DTIC Science & Technology

2006-09-01

solution 3 3. Several miscellaneous compounds , including molecular oxygen and organic biradicals 4. Metals When a variable magnetic field is...substrate layer) Heusler alloys are considered to be prime candidates, because they show great potential for spin-injection contacts to compound and...usually employ simple parabolic bands and/or momentum and energy independent tunneling matrix elements. The classical theory of tunneling assumes that the

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

NASA Astrophysics Data System (ADS)

Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.

2016-12-01

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by preforming continuous wave (cw) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and room temperature using microwave frequencies between about 1 GHz and 20 GHz, as well as pulsed EDMR at the X band (10 GHz). Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes whereas pulsed EDMR allows for the observation of coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, in which monomer units are twisted with respect to each other, and an ordered (β) phase, where all monomers lie within one plane. In thin films of organic light-emitting diodes, the appearance of a particular phase can be controlled by deposition parameters and solvent vapor annealing, and is verified by electroluminescence spectroscopy. Under bipolar charge-carrier injection conditions, we conducted multifrequency cw EDMR, electrically detected Rabi spin-beat experiments, and Hahn echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron-spin-echo envelope modulation due to the coupling of the carrier spins to nearby nuclear spins. Our results demonstrate that, while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge-carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. In both morphologies, we observe the presence of at least two different spin-dependent recombination processes. At room temperature and 10 K, polaron-pair recombination through weakly spin-spin coupled intermediate charge-carrier pair states is dominant, while at low temperatures, additional signatures of spin-dependent charge transport through the interaction of polarons with triplet excitons are seen in the half-field resonance of a triplet spin-1 species. This additional contribution arises since triplet lifetimes are increased at lower temperatures. We tentatively conclude that spectral broadening induced by hyperfine coupling is slightly weaker in the more ordered β-phase than in the glassy phase since protons are more evenly spaced, whereas broadening effects due to spin-orbit coupling, which impacts the distribution of g -factors, appear to be somewhat more significant in the β-phase.

Polarized He 3 + 2 ions in the Alternate Gradient Synchrotron to RHIC transfer line

DOE PAGES

Tsoupas, N.; Huang, H.; Méot, F.; ...

2016-09-06

The proposed electron-hadron collider (eRHIC) to be built at Brookhaven National Laboratory (BNL) will allow the collisions of 20 GeV polarized electrons with 250 GeV polarized protons, or 100 GeV/n polarized 3He +2 ions, or other unpolarized ion species. The large value of the anomalous magnetic moment of the 3He nucleus G He=(g₋2)/2=₋4.184 (where g is the g-factor of the 3He nuclear spin) combined with the peculiar layout of the transfer line which transports the beam bunches from the Alternate Gradient Synchrotron (AGS) to the Relativistic Heavy Ion Collider (RHIC) makes the transfer and injection of polarized 3He ions frommore » AGS to RHIC (AtR) a special case as we explain in the paper. Specifically in this paper we calculate the stable spin direction of a polarized 3He beam at the exit of the AtR line which is also the injection point of RHIC, and lastly, we discuss a simple modifications of the AtR beam-transfer-line, to perfectly match the stable spin direction of the injected polarized 3He beam to that of the circulating beam, at the injection point of RHIC.« less

Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

PubMed Central

Nedelkoski, Zlatko; Kuerbanjiang, Balati; Glover, Stephanie E.; Sanchez, Ana M.; Kepaptsoglou, Demie; Ghasemi, Arsham; Burrows, Christopher W.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hasnip, Philip J.; Hase, Thomas; Bell, Gavin R.; Hirohata, Atsufumi; Lazarov, Vlado K.

2016-01-01

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors. PMID:27869132

Toward spin-based Magneto Logic Gate in Graphene

NASA Astrophysics Data System (ADS)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

Spin Transport in Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Schoenenberger, Christian

2005-03-01

We report on spin transport in carbon nanotubes. First, spin injection in arc-discharge grown multi-walled carbon nanotubes (MWNTs) is achieved by using a ferromagnetic PdNi alloy as contact material. The two contacts, i.e. source and drain, have different shape rendering different magnetic switching fields. Typical two-terminal resistances are in the range of 5-100 kOhm. We find a tunneling magneto resistance (TMR) signal amounting to 2.5-3%. Secondly, we explore the TMR signal as a function of temperature T, source-drain voltage Vsd, and gate voltage Vg. As expected the TMR signal decays with T and Vsd. Remarkably, however, we find a sign change in the spin signal (the TMR signal) as a function of both Vsd and Vg. This work has been done in collaboration with: S. Sahoo and T. Kontos (Univ. of Basel), C. Sürgers (Univ. of Karlsruhe), and L. Forro (EPFL Lausanne).

Spin transport in carbon nanotubes bundles: An ab-initio study

NASA Astrophysics Data System (ADS)

Meena, Shweta; Choudhary, Sudhanshu

2017-10-01

First principles investigations are performed on understanding the spin-polarized transport in carbon nanotubes and carbon nanotube bundles consisting of (8 , 0) and (17 , 0) SWCNTs kept in vertical (out-of-plane) arrangement and contacted by two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes. On comparison of the results for all the structures, it is observed that carbon nanotube bundle consisting of (17 , 0) CNT offers high TMR ∼100% and the transport phenomenon is tunneling, since there are no transmission states near Fermi level. However, in individual (8 , 0) and (17 , 0) CNT the transport is not because of tunneling, since there are significant number of transmission states near Fermi level. High Magneto Resistance (MR) 96% and 99% is observed in individual (8 , 0) and (17 , 0) CNTs respectively. Both TMR and Spin Injection Efficiency η (Spin-Filtration) are higher in (17 , 0) carbon nanotube bundle structure, which is due to carbon nanotube bundle acting as a perfect barrier in vertical (out-of-plane) arrangement resulting in negligible spin-down current (I↓) in both Parallel Configuration (PC) and Antiparallel Configuration (APC).

Field-free deterministic ultrafast creation of magnetic skyrmions by spin-orbit torques

NASA Astrophysics Data System (ADS)

Büttner, Felix; Lemesh, Ivan; Schneider, Michael; Pfau, Bastian; Günther, Christian M.; Hessing, Piet; Geilhufe, Jan; Caretta, Lucas; Engel, Dieter; Krüger, Benjamin; Viefhaus, Jens; Eisebitt, Stefan; Beach, Geoffrey S. D.

2017-11-01

Magnetic skyrmions are stabilized by a combination of external magnetic fields, stray field energies, higher-order exchange interactions and the Dzyaloshinskii-Moriya interaction (DMI). The last favours homochiral skyrmions, whose motion is driven by spin-orbit torques and is deterministic, which makes systems with a large DMI relevant for applications. Asymmetric multilayers of non-magnetic heavy metals with strong spin-orbit interactions and transition-metal ferromagnetic layers provide a large and tunable DMI. Also, the non-magnetic heavy metal layer can inject a vertical spin current with transverse spin polarization into the ferromagnetic layer via the spin Hall effect. This leads to torques that can be used to switch the magnetization completely in out-of-plane magnetized ferromagnetic elements, but the switching is deterministic only in the presence of a symmetry-breaking in-plane field. Although spin-orbit torques led to domain nucleation in continuous films and to stochastic nucleation of skyrmions in magnetic tracks, no practical means to create individual skyrmions controllably in an integrated device design at a selected position has been reported yet. Here we demonstrate that sub-nanosecond spin-orbit torque pulses can generate single skyrmions at custom-defined positions in a magnetic racetrack deterministically using the same current path as used for the shifting operation. The effect of the DMI implies that no external in-plane magnetic fields are needed for this aim. This implementation exploits a defect, such as a constriction in the magnetic track, that can serve as a skyrmion generator. The concept is applicable to any track geometry, including three-dimensional designs.

Effects of interface electric field on the magnetoresistance in spin devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interfacemore » electronic structures.« less

Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons

NASA Astrophysics Data System (ADS)

Li, Kuanhong; Zhang, Xiang-Hua

2018-05-01

We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.

Recent Advance in Organic Spintronics and Magnetic Field Effect

NASA Astrophysics Data System (ADS)

Valy Vardeny, Z.

2013-03-01

In this talk several important advances in the field of Organic Spintronics and magnetic field effect (MFE) of organic films and optoelectronic devices that have occurred during the past two years from the Utah group will be surveyed and discussed. (i) Organic Spintronics: We demonstrated spin organic light emitting diode (spin-OLED) using two FM injecting electrodes, where the electroluminescence depends on the mutual orientation of the electrode magnetization directions. This development has opened up research studies into organic spin-valves (OSV) in the space-charge limited current regime. (ii) Magnetic field effect: We demonstrated that the photoinduced absorption spectrum in organic films (where current is not involved) show pronounced MFE. This unravels the underlying mechanism of the MFE in organic devices, to be more in agreement with the field of MFE in Biochemistry. (iii) Spin effects in organic optoelectronic devices: We demonstrated that certain spin 1/2 radical additives to donor-acceptor blends substantially enhance the power conversion efficiency of organic photovoltaic (OPV) solar cells. This effect shows that studies of spin response and MFE in OPV devices are promising. In collaboration with T. Nguyen, E. Ehrenfreund, B. Gautam, Y. Zhang and T. Basel. Supported by the DOE grant 04ER46109 ; NSF Grant # DMR-1104495 and MSF-MRSEC program DMR-1121252 [2,3].

Gas-injection-start and shutdown characteristics of a 2-kilowatt to 15-kilowatt Brayton power system

NASA Technical Reports Server (NTRS)

Cantoni, D. A.

1972-01-01

Two methods of starting the Brayton power system have been considered: (1) using the alternator as a motor to spin the Brayton rotating unit (BRU), and (2) spinning the BRU by forced gas injection. The first method requires the use of an auxiliary electrical power source. An alternating voltage is applied to the terminals of the alternator to drive it as an induction motor. Only gas-injection starts are discussed in this report. The gas-injection starting method requires high-pressure gas storage and valves to route the gas flow to provide correct BRU rotation. An analog computer simulation was used to size hardware and to determine safe start and shutdown procedures. The simulation was also used to define the range of conditions for successful startups. Experimental data were also obtained under various test conditions. These data verify the validity of the start and shutdown procedures.

Spin dependent transport and spin transfer in nanoconstrictions and current confined nanomagnets

NASA Astrophysics Data System (ADS)

Ozatay, Ozhan

In this thesis, I have employed point contact spectroscopy to determine the nature of electron transport across constrained domain walls in a ferromagnetic nanocontact and to uncover the relationship between ballisticity of electron transport and domain wall magnetoresistance. In the range of hole sizes studied (from 10 to 3 nm) the resulting magnetoresistance was found to be less than 0.5% and one that increases with decreasing contact size. I have used point contacts as local probes, to study the spin dependent transport across Ferromagnet/Normal Metal/Ferromagnet(FM/NM/FM) trilayers as well as the consequences of localized spin polarized current injection into a nano magnet on spin angular momentum transfer and high frequency magnetization dynamics. I have demonstrated that absolute values for spin transfer switching critical currents are reduced in this new geometry as compared to uniform current injection. I have also performed micromagnetic simulations to determine the evolution of magnetization under the application of magnetic fields and currents to gain more insights into experimental results. I have used Scanning Transmission Electron Microscopy (STEM), X-Ray Photoemission Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) techniques to characterize the interfacial mixing and oxygen diffusion in the metallic multilayers of interest. I have shown that the Ta/CuOx bilayer structure provides a smooth substrate by improving interfacial roughness due to grain boundary diffusion of oxygen and reaction with Ta that fills in the grain boundary gaps in Cu. Analysis of the Py/AlOx interface proved a strong oxidation passivation on the Py surface by Al coating accompanied by Fe segregation into the alumina. I have utilized the characterization results to design a new nanomagnet whose sidewalls are protected from adventitious sidewall oxide layers and yields improved device performance. The oxide layers that naturally develop at the sidewalls of Py nanomagnets cause an enhancement in magnetic damping especially for temperatures below the blocking temperature of the AFM layer (≤40K). Studies with pillars protected by Al coating and ones with more NiO coating (˜2.5 nm) shed light onto the role of surface oxides in determining temperature dependent behaviour of both spin torque and field driven switching characteristics.

Spin-lock imaging of exogenous exchange-based contrast agents to assess tissue pH.

PubMed

Zu, Zhongliang; Li, Hua; Jiang, Xiaoyu; Gore, John C

2018-01-01

Some X-ray contrast agents contain exchangeable protons that give rise to exchange-based effects on MRI, including chemical exchange saturation transfer (CEST). However, CEST has poor specificity to explicit exchange parameters. Spin-lock sequences at high field are also sensitive to chemical exchange. Here, we evaluate whether spin-locking techniques can detect the contrast agent iohexol in vivo after intravenous administration, and their potential for measuring changes in tissue pH. Two metrics of contrast based on R 1ρ , the spin lattice relaxation rate in the rotating frame, were derived from the behavior of R 1ρ at different locking fields. Solutions containing iohexol at different concentrations and pH were used to evaluate the ability of the two metrics to quantify exchange effects. Images were also acquired from rat brains bearing tumors before and after intravenous injections of iohexol to evaluate the potential of spin-lock techniques for detecting the agent and pH variations. The two metrics were found to depend separately on either agent concentration or pH. Spin-lock imaging may therefore provide specific quantification of iohexol concentration and the iohexol-water exchange rate, which reports on pH. Spin-lock techniques may be used to assess the dynamics of intravenous contrast agents and detect extracellular acidification. Magn Reson Med 79:298-305, 2018. © 2017 International Society for Magnetic Resonance in Medicine. © 2017 International Society for Magnetic Resonance in Medicine.

Electron-Spin Filters Based on the Rashba Effect

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y.; Cartoixa, Xavier; McGill, Thomas C.; Moon, Jeong S.; Chow, David H.; Schulman, Joel N.; Smith, Darryl L.

2004-01-01

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Optical and Terahertz Measurements of Spintronic Materials

NASA Astrophysics Data System (ADS)

Bas, Derek A.

Terahertz time-domain spectroscopy (THz-TDS) is a versatile method to determine lattice, electronic charge and spin dynamics. This dissertation employs THz-TDS to study the spin and charge dynamics in topological insulator and antiferromagnetic systems. Observing time-domain effects on the scale of picoseconds gives unprecedented control over optoelectronic properties. Methods and challenges of THz generation, detection, and transmission are outlined. The wealth of light-matter interactions present in all nonlinear optical experiments are discussed, including primarily optical rectification, shift currents, and injection currents. Each of these gives valuable insight into the carrier dynamics of a material type. Conventional electronics can be improved in their speed and efficiency by taking advantage of an additional degree of freedom- electron spin. Therefore, we consider material types which exhibit great potential to replace common electronic materials while simultaneously employing electron spin for information storage or transport. Antiferromagnets show a type of spin-order that has the ability to store bits without unwanted interactions between neighboring particles. In antiferromagnetic MnF2 which has a Neel temperature of TN = 67 K, THz-TDS is performed on one-magnon and two-magnon resonances in the 0.1-2.3 THz range while varying the temperature from 6 to 295 K. The behavior of the one-magnon resonance is modeled by modified molecular field theory with an additional coupling term j set as a free parameter to fit the data. The resulting best fit value j = 1.1 provides the first experimental evidence indicating that neighboring spins in MnF 2 are only weakly coupled, closely approximating mean-field theory. Time-of-flight analysis was performed on the transmitted THz pulses to measure the temperature-dependent THz refractive index, which was modeled by phonon energy in the T > TN regime and magnetic energy in the T < TN regime. In the range T < 10 K, measured data deviates from this theory, and can be modeled by internal energy from hyperfine interactions, providing the first direct observation of hyperfine interactions in THz spectroscopy. Topological insulators exhibit the ability to transport spin-polarized currents along their surfaces with high mobilities. Phase-related pulses at photon energies 0.8 and 1.6 eV are used to simultaneously inject shift and injection currents into thin-films of the prototypical topological insulator Bi2Se3, and the foundation is laid out for an extensive study of the novel carrier properties in topological surface states. A method of symmetry analysis based on the crystal lattice is developed for isolation and individual study of the surfaceonly shift currents, which are threefold symmetric with equal components parallel and perpendicular to the pump polarization, and bulk/surface injection currents, which are isotropic parallel to the pump polarization and vanishing perpendicular to it. Pump energies can be tuned through the Dirac point, a capability which holds promise for the search of smoking gun evidence for the novel topological insulator surface state behavior that has been theorized.

Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

NASA Astrophysics Data System (ADS)

Graziosi, Patrizio; Neophytou, Neophytos

2018-02-01

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

NASA Astrophysics Data System (ADS)

Ye, Yu; Xiao, Jun; Wang, Hailong; Ye, Ziliang; Zhu, Hanyu; Zhao, Mervin; Wang, Yuan; Zhao, Jianhua; Yin, Xiaobo; Zhang, Xiang

2016-07-01

Electrically controlling the flow of charge carriers is the foundation of modern electronics. By accessing the extra spin degree of freedom (DOF) in electronics, spintronics allows for information processes such as magnetoresistive random-access memory. Recently, atomic membranes of transition metal dichalcogenides (TMDCs) were found to support unequal and distinguishable carrier distribution in different crystal momentum valleys. This valley polarization of carriers enables a new DOF for information processing. A variety of valleytronic devices such as valley filters and valves have been proposed, and optical valley excitation has been observed. However, to realize its potential in electronics it is necessary to electrically control the valley DOF, which has so far remained a significant challenge. Here, we experimentally demonstrate the electrical generation and control of valley polarization. This is achieved through spin injection via a diluted ferromagnetic semiconductor and measured through the helicity of the electroluminescence due to the spin-valley locking in TMDC monolayers. We also report a new scheme of electronic devices that combine both the spin and valley DOFs. Such direct electrical generation and control of valley carriers opens up new dimensions in utilizing both the spin and valley DOFs for next-generation electronics and computing.

Ultrafast magnetization switching by spin-orbit torques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garello, Kevin, E-mail: kevin.garello@mat.ethz.ch; Avci, Can Onur; Baumgartner, Manuel

2014-11-24

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180 ps to ms in Pt/Co/AlO{sub x} dots with lateral dimensions of 90 nm. We characterize the switching probability and critical current I{sub c} as a function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where I{sub c} scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime, where I{sub c} variesmore » weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that I{sub c} is a factor 3–4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques.« less

Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region

NASA Astrophysics Data System (ADS)

Ji, Yang; Miao, J.; Zhu, Y. M.; Meng, K. K.; Xu, X. G.; Chen, J. K.; Wu, Y.; Jiang, Y.

2018-06-01

We demonstrate the negative spin Hall magnetoresistance (SMR) observed in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The SMR signals are changed from the positive to negative magnitude when monotonously reducing the temperature from 300 K to 50 K. The positive and negative SMR signals are expected to be associated with the two different ways for injection of the spin current, into the boundary ferromagnetic region and the bulk antiferromagnetic region of α-Cr2O3 (0001), respectively. The slopes of the abnormal Hall curves exhibit the same sign with the SMR signal. From the SMR ratio under 3 T, the spin mixing conductance at the Cr2O3/Ta interface is estimated to be 1.12 × 1014 Ω-1.m-2, which is comparable to the one observed in the Y3Fe5O12(YIG)/Pt structure and our early results of the Cr2O3/W structure.

Generation of magnetic skyrmion bubbles by inhomogeneous spin Hall currents

DOE PAGES

Heinonen, Olle; Jiang, Wanjun; Somaily, Hamoud; ...

2016-03-07

Recent experiments have shown that magnetic skyrmion bubbles can be generated and injected at room temperature in thin films. In this study, we demonstrate, using micromagnetic modeling, that such skyrmions can be generated by an inhomogeneous spin Hall torque in the presence of Dzyaloshinskii-Moriya interactions (DMIs). In the experimental Ta-Co 20Fe 60B 20 thin films, the DMI is rather small; nevertheless, the skyrmion bubbles are stable, or at least metastable on observational time scales.

Laser Spinning: A New Technique for Nanofiber Production

NASA Astrophysics Data System (ADS)

Penide, J.; Quintero, F.; del Val, J.; Comesaña, R.; Lusquiños, F.; Riveiro, A.; Pou, J.

Laser Spinning is a new technique to produce ultralongnanofibers with tailored chemical compositions. In this method, a high power laser is employed to melt a small volume of the precursor material at high temperatures. At the same time, a supersonic gas jet is injected on this molten volume producing its rapid cooling and elongation by viscous friction with the high speed gas flow, hence forming the amorphous nanofibers. This paper collects the main results obtained since the introduction of this technique in 2007.

Boolean and brain-inspired computing using spin-transfer torque devices

NASA Astrophysics Data System (ADS)

Fan, Deliang

Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching of a nano-magnet due to current induced spin-transfer torque (STT) have been demonstrated in recent experiments. Such STT devices can be explored in compact, low power memory and logic design. In order to truly leverage STT devices based computing, researchers require a re-think of circuit, architecture, and computing model, since the STT devices are unlikely to be drop-in replacements for CMOS. The potential of STT devices based computing will be best realized by considering new computing models that are inherently suited to the characteristics of STT devices, and new applications that are enabled by their unique capabilities, thereby attaining performance that CMOS cannot achieve. The goal of this research is to conduct synergistic exploration in architecture, circuit and device levels for Boolean and brain-inspired computing using nanoscale STT devices. Specifically, we first show that the non-volatile STT devices can be used in designing configurable Boolean logic blocks. We propose a spin-memristor threshold logic (SMTL) gate design, where memristive cross-bar array is used to perform current mode summation of binary inputs and the low power current mode spintronic threshold device carries out the energy efficient threshold operation. Next, for brain-inspired computing, we have exploited different spin-transfer torque device structures that can implement the hard-limiting and soft-limiting artificial neuron transfer functions respectively. We apply such STT based neuron (or 'spin-neuron') in various neural network architectures, such as hierarchical temporal memory and feed-forward neural network, for performing "human-like" cognitive computing, which show more than two orders of lower energy consumption compared to state of the art CMOS implementation. Finally, we show the dynamics of injection locked Spin Hall Effect Spin-Torque Oscillator (SHE-STO) cluster can be exploited as a robust multi-dimensional distance metric for associative computing, image/ video analysis, etc. Our simulation results show that the proposed system architecture with injection locked SHE-STOs and the associated CMOS interface circuits can be suitable for robust and energy efficient associative computing and pattern matching.

A geometric model of a V-slit Sun sensor correcting for spacecraft wobble

NASA Technical Reports Server (NTRS)

Mcmartin, W. P.; Gambhir, S. S.

1994-01-01

A V-Slit sun sensor is body-mounted on a spin-stabilized spacecraft. During injection from a parking or transfer orbit to some final orbit, the spacecraft may not be dynamically balanced. This may result in wobble about the spacecraft spin axis as the spin axis may not be aligned with the spacecraft's axis of symmetry. While the widely used models in Spacecraft Attitude Determination and Control, edited by Wertz, correct for separation, elevation, and azimuthal mounting biases, spacecraft wobble is not taken into consideration. A geometric approach is used to develop a method for measurement of the sun angle which corrects for the magnitude and phase of spacecraft wobble. The algorithm was implemented using a set of standard mathematical routines for spherical geometry on a unit sphere.

Energy consumption analysis of graphene based all spin logic device with voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Zhang, Zhizhong; Zhang, Yue; Zheng, Zhenyi; Wang, Guanda; Su, Li; Zhang, Youguang; Zhao, Weisheng

2017-05-01

All spin logic device (ASLD) is a promising option to realize the ultra-low power computing systems. However, the low spin transport efficiency and the non-local switching of the detector have become two key challenges of the ASLD. In this paper, we analyze the energy consumption of a graphene based ASLD with the ferromagnetic layer switching assistance by voltage control magnetic anisotropy (VCMA) effect. This structure has significant potential towards ultra-low power consumption: the applied voltage can not only shorten switching time of the ferromagnetic layer, but also decreases the critical injection current; the graphene channel enhances greatly the spin transport efficiency. By applying the approximate circuit model, the impact of material configurations, interfaces and geometry can be synthetically studied. An accurate physic model was also developed, based on which, we carry out the micro-magnetic simulations to analyze the magnetization dynamics. Combining these electrical and magnetic investigations, the energy consumption of the proposed ASLD can be estimated. With the optimizing parameters, the energy consumption can be reduced to 2.5 pJ for a logic operation.

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

NASA Astrophysics Data System (ADS)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

Monte Carlo studies of thermalization of electron-hole pairs in spin-polarized degenerate electron gas in monolayer graphene

NASA Astrophysics Data System (ADS)

Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

2018-02-01

Monte Carlo method is applied to the study of relaxation of excited electron-hole (e-h) pairs in graphene. The presence of background of spin-polarized electrons, with high density imposing degeneracy conditions, is assumed. To such system, a number of e-h pairs with spin polarization parallel or antiparallel to the background is injected. Two stages of relaxation: thermalization and cooling are clearly distinguished when average particles energy < E> and its standard deviation σ _E are examined. At the very beginning of thermalization phase, holes loose energy to electrons, and after this process is substantially completed, particle distributions reorganize to take a Fermi-Dirac shape. To describe the evolution of < E > and σ _E during thermalization, we define characteristic times τ _ {th} and values at the end of thermalization E_ {th} and σ _ {th}. The dependence of these parameters on various conditions, such as temperature and background density, is presented. It is shown that among the considered parameters, only the standard deviation of electrons energy allows to distinguish between different cases of relative spin polarizations of background and excited electrons.

Graphene-passivated cobalt as a spin-polarized electrode: growth and application to organic spintronics

NASA Astrophysics Data System (ADS)

Zhou, Guoqing; Tang, Guoqiang; Li, Tian; Pan, Guoxing; Deng, Zanhong; Zhang, Fapei

2017-03-01

The ferromagnetic electrode on which a clean high-quality electrode/interlayer interface is formed, is critical to achieve efficient injection of spin-dependent electrons in spintronic devices. In this work, we report on the preparation of graphene-passivated cobalt electrodes for application in vertical spin valves (SVs). In this strategy, high-quality monolayer and bi-layer graphene sheets have been grown directly on the crystal Co film substrates in a controllable process by chemical vapor deposition. The electrode is oxidation resistant and ensures a clean crystalline graphene/Co interface. The AlO x -based magnetic junction devices using such bottom electrodes, exhibit a negative tunnel magneto-resistance (TMR) of ca. 1.0% in the range of 5 K-300 K. Furthermore, we have also fabricated organic-based SVs employing a thin layer of fullerene C60 or an N-type polymeric semiconductor as the interlayer. The devices of both materials show a tunneling behavior of spin-polarized electron transport as well as appreciable TMR effect, demonstrating the high potential of such graphene-coated Co electrodes for organic-based spintronics.

Structural, chemical, and magnetic properties of Fe films grown on InAs(100)

NASA Astrophysics Data System (ADS)

Ruppel, L.; Witte, G.; Wöll, Ch.; Last, T.; Fischer, S. F.; Kunze, U.

2002-12-01

The structure of epitaxial Fe films grown on an InAs(100)-c(8×2)/(4×2) surface has been studied in situ by means of low-energy electron diffraction and x-ray photoelectron spectroscopy, while their magnetic properties were characterized ex situ by superconducting quantum interference device magnetometry at temperatures of 5 300 K. Deposition of iron at room temperature or below leads to the formation of a thin iron arsenide layer that floats on the Fe film upon further deposition. Postdeposition annealing causes no significant improvement of the film structure but activates a further arsenic diffusion through the Fe film. Significant exchange-bias effects were found at low temperatures for insufficiently capped and partially oxidized Fe films, and are attributed to noncollinear spin order at the Ag capping layer/Fe interface. For perfect, nonoxidized Fe films, such a noncollinear spin order at the Fe/InAs interface is excluded as no thermomagnetic irreversibilities were found. This indicates that the spin order at the Fe/InAs interface is suitable for spin injection.

Spatially and time-resolved magnetization dynamics driven by spin-orbit torques

NASA Astrophysics Data System (ADS)

Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can Onur; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro

2017-10-01

Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlOx dots during current pulse injection. Time-resolved X-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a subnanosecond current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 1012 reversal cycles.

The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongtao; Desai, P.; Kreouzis, T.

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes aremore » holes.« less

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, Murat; Boulle, Olivier; Drouard, Marc

2014-01-27

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memorymore » cell.« less

Spin caloritronic nano-oscillator

DOE PAGES

Safranski, C.; Barsukov, I.; Lee, H. K.; ...

2017-07-18

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Spin caloritronic nano-oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safranski, C.; Barsukov, I.; Lee, H. K.

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Terahertz-Frequency Spin Hall Auto-oscillator Based on a Canted Antiferromagnet

NASA Astrophysics Data System (ADS)

Sulymenko, O. R.; Prokopenko, O. V.; Tiberkevich, V. S.; Slavin, A. N.; Ivanov, B. A.; Khymyn, R. S.

2017-12-01

We propose a design of a terahertz-frequency signal generator based on a layered structure consisting of a current-driven platinum (Pt) layer and a layer of an antiferromagnet (AFM) with easy-plane anisotropy, where the magnetization vectors of the AFM sublattices are canted inside the easy plane by the Dzyaloshinskii-Moriya interaction (DMI). The dc electric current flowing in the Pt layer creates due to the spin Hall effect, a perpendicular spin current that, being injected in the AFM layer, tilts the DMI-canted AFM sublattices out of the easy plane, thus exposing them to the action of a strong internal exchange magnetic field of the AFM. The sublattice magnetizations, along with the small net magnetization vector mDMI of the canted AFM, start to rotate about the hard anisotropy axis of the AFM with the terahertz frequency proportional to the injected spin current and the AFM exchange field. The rotation of the small net magnetization mDMI results in the terahertz-frequency dipolar radiation that can be directly received by an adjacent (e.g., dielectric) resonator. We demonstrate theoretically that the radiation frequencies in the range f =0.05 - 2 THz are possible at the experimentally reachable magnitudes of the driving current density, and we evaluate the power of the signal radiated into different types of resonators. This power increases with the increase of frequency f , and it can exceed 1 μ W at f ˜0.5 THz for a typical dielectric resonator of the electric permittivity ɛ ˜10 and a quality factor Q ˜750 .

Evaluation of the specificity and sensitivity of ferritin as an MRI reporter gene in the mouse brain using lentiviral and adeno-associated viral vectors.

PubMed

Vande Velde, G; Rangarajan, J R; Toelen, J; Dresselaers, T; Ibrahimi, A; Krylychkina, O; Vreys, R; Van der Linden, A; Maes, F; Debyser, Z; Himmelreich, U; Baekelandt, V

2011-06-01

The development of in vivo imaging protocols to reliably track transplanted cells or to report on gene expression is critical for treatment monitoring in (pre)clinical cell and gene therapy protocols. Therefore, we evaluated the potential of lentiviral vectors (LVs) and adeno-associated viral vectors (AAVs) to express the magnetic resonance imaging (MRI) reporter gene ferritin in the rodent brain. First, we compared the induction of background MRI contrast for both vector systems in immune-deficient and immune-competent mice. LV injection resulted in hypointense (that is, dark) changes of T(2)/T(2)(*) (spin-spin relaxation time)-weighted MRI contrast at the injection site, which can be partially explained by an inflammatory response against the vector injection. In contrast to LVs, AAV injection resulted in reduced background contrast. Moreover, AAV-mediated ferritin overexpression resulted in significantly enhanced contrast to background on T(2)(*)-weighted MRI. Although sensitivity associated with the ferritin reporter remains modest, AAVs seem to be the most promising vector system for in vivo MRI reporter gene imaging.

Controlling heat and particle currents in nanodevices by quantum observation

NASA Astrophysics Data System (ADS)

Biele, Robert; Rodríguez-Rosario, César A.; Frauenheim, Thomas; Rubio, Angel

2017-07-01

We demonstrate that in a standard thermo-electric nanodevice the current and heat flows are not only dictated by the temperature and potential gradient, but also by the external action of a local quantum observer that controls the coherence of the device. Depending on how and where the observation takes place, the direction of heat and particle currents can be independently controlled. In fact, we show that the current and heat flow in a quantum material can go against the natural temperature and voltage gradients. Dynamical quantum observation offers new possibilities for the control of quantum transport far beyond classical thermal reservoirs. Through the concept of local projections, we illustrate how we can create and directionality control the injection of currents (electronic and heat) in nanodevices. This scheme provides novel strategies to construct quantum devices with application in thermoelectrics, spintronic injection, phononics, and sensing among others. In particular, highly efficient and selective spin injection might be achieved by local spin projection techniques.

In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure

NASA Astrophysics Data System (ADS)

Islam, Md. Earul; Akabori, Masashi

2018-03-01

We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [ 2 ̅ 110 ] and [ 0 1 ̅ 10 ] of hexagonal MnAs i.e. [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [ 11 2 ̅ ] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.

Pryce-Hoyle Tensor in a Combined Einstein-Cartan-Brans-Dicke Model

NASA Astrophysics Data System (ADS)

Berman, Marcelo Samuel

2009-03-01

In addition to introducing matter injection through a scalar field determined by Pryce-Hoyle tensor, we also combine it with a BCDE (Brans-Dicke-Einstein-Cartan) theory with lambda-term developed earlier by Berman (Astrophys. Space Sci. 314:79-82, 2008), for inflationary scenario. It involves a variable cosmological constant, which decreases with time, jointly with energy density, cosmic pressure, shear, vorticity, and Hubble’s parameter, while the scale factor, total spin and scalar field increase exponentially. The post-inflationary fluid resembles a perfect one, though total spin grows, but not the angular speed (Berman, in Astrophys. Space Sci. 312:275, 2007). The Pryce-Hoyle tensor, which can measured by the number of injected particles per unit proper volume and time, as well as shear and vorticity, can be neglected in the aftermath of inflation (“no-hair”).

Heteroclinic tangle phenomena in nanomagnets subject to time-harmonic excitations

NASA Astrophysics Data System (ADS)

Serpico, C.; Quercia, A.; Bertotti, G.; d'Aquino, M.; Mayergoyz, I.; Perna, S.; Ansalone, P.

2015-05-01

Magnetization dynamics in uniformly magnetized nanomagnets excited by time-harmonic (AC) external fields or spin-polarized injected currents is considered. The analysis is focused on the behaviour of the AC-excited dynamics near saddle equilibria. It turns out that this dynamics has a chaotic character at moderately low power level. This chaotic and fractal nature is due to the phenomenon of heteroclinic tangle which is produced by the combined effect of AC-excitations and saddle type dynamics. By using the perturbation technique based on Melnikov function, analytical formulas for the threshold AC excitation amplitudes necessary to create the heteroclinic tangle are derived. Both the cases of AC applied fields and AC spin-polarized injected currents are treated. Then, by means of numerical simulations, we show how heteroclinic tangle is accompanied by the erosion of the safe basin around the stable regimes.

Writing and deleting single magnetic skyrmions.

PubMed

Romming, Niklas; Hanneken, Christian; Menzel, Matthias; Bickel, Jessica E; Wolter, Boris; von Bergmann, Kirsten; Kubetzka, André; Wiesendanger, Roland

2013-08-09

Topologically nontrivial spin textures have recently been investigated for spintronic applications. Here, we report on an ultrathin magnetic film in which individual skyrmions can be written and deleted in a controlled fashion with local spin-polarized currents from a scanning tunneling microscope. An external magnetic field is used to tune the energy landscape, and the temperature is adjusted to prevent thermally activated switching between topologically distinct states. Switching rate and direction can then be controlled by the parameters used for current injection. The creation and annihilation of individual magnetic skyrmions demonstrates the potential for topological charge in future information-storage concepts.

Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

NASA Astrophysics Data System (ADS)

Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

2018-03-01

We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

Application of Medical Magnetic Resonance Imaging for Particle Concentration Measurement

NASA Astrophysics Data System (ADS)

Borup, Daniel; Elkins, Christopher; Eaton, John

2014-11-01

Particle transport and deposition in internal flows is important in a range of applications such as dust aggregation in turbine engines and aerosolized medicine deposition in human airways. Unlike optical techniques, Magnetic Resonance Imaging (MRI) is well suited for complex applications in which optical access is not possible. Here we present efforts to measure 3D particle concentration distribution using MRI. Glass particles dispersed in water flow reduce MRI signal from a spin-echo or gradient-echo scanning sequence by decreasing spin density and dephasing the spins present in the fluid. A preliminary experiment was conducted with a particle streak injected at the centerline of a turbulent round pipe flow with a U bend. Measurements confirmed that signal strength was related to particle concentration and showed the effects of gravitational settling and turbulent dispersion. Next, measurements of samples in a mixing chamber were taken. Particle volume fraction was varied and sensitivity to particle/fluid velocity was investigated. These results give a relationship between MRI signal, particle volume fraction, MRI sequence echo time, and spin relaxation parameters that can be used to measure local particle volume fraction in other turbulent flows of interest.

Bipolar Spintronics: From magnetic diodes to magnetic bipolar transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor

2004-03-01

We develop a theory of bipolar (electrons and holes) spin-polarized transport [1,2] in semiconductors and discuss its implications for spintronic devices [3]. In our proposal for magnetic bipolar transistors [4,5] we show how bipolar spintronics can lead to spin and magnetic field controlled active devices, not limited by the magnetoresistive effects used in all-metallic structures [3]. We focus on magnetic p-n diodes [1,2] with spatially dependent spin splitting (Zeeman or exchange) of carrier bands. An exchange splitting can be provided by ferromagnetic semiconductors [6], while a large Zeeman splitting can be realized in the presence of magnetic field in magnetically doped or narrow band gap semiconductors [3]. Our theory of magnetic diodes [1,2] can be directly applied to magnetic bipolar transistors--the three-terminal devices which consist of two magnetic p-n diodes connected in series [4,5]. Predictions of exponentially large magnetoresistance [1] and a strong coupling between the spin and charge transport leading to the spin-voltaic effect [1,7] for magnetic diodes are also relevant for magnetic bipolar transistors. In particular, in n-p-n transistors, we show the importance of considering the nonequilibrium spin leading to the spin-voltaic effect. In addition to the applied magnetic filed, the injected nonequilibrium spin can be used to dynamically control the current amplification (gain). Recent experimental progress [8,9] supports the viability of our theoretical proposals. [1] I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. 88, 066603 (2002). [2] J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B 66, 165301 (2002). [3] I. Zutic, J. Fabian, S. Das Sarma, Rev. Mod. Phys., in press. [4] J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639; cond-mat/0307014, Appl. Phys. Lett., in press. [5] J. Fabian and I. Zutic, cond-mat/0311456. [6] H. Ohno, Science 281, 951 (1998). [7] I. Zutic, J. Fabian, S. Das Sarma, Appl. Phys. Lett. 82, 221 (2003). [8] N. Samarth, S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer, Solid State Commun. 127, 173 (2003). [9] F. Tsui, L. Ma, L. He, Appl. Phys. 83, 954 (2003).

Graphene-diamond interface: Gap opening and electronic spin injection

NASA Astrophysics Data System (ADS)

Ma, Yandong; Dai, Ying; Guo, Meng; Huang, Baibiao

2012-06-01

Creating a finite band gap, injecting electronic spin, and finding a suitable substrate are the three important challenges for building graphene-based devices. Here, first-principles calculations are performed to investigate the electronic and magnetic properties of graphene adsorbed on the (111) surface of diamond, which is synthesized experimentally [Nature10.1038/nature09979 472, 74 (2011); J. Appl. Phys.10.1063/1.3627370 110, 044324 (2011); Nano Lett.10.1021/nl204545q 12, 1603 (2012); ACS Nano10.1021/nn204362p 6, 1018 (2012)]. Our results reveal that the graphene adsorbed on the diamond surface is a semiconductor with a finite gap depending on the adsorption arrangements due to the variation of on-site energy induced by the diamond surface, with the extra advantage of maintaining main characters of the linear band dispersion of graphene. More interestingly, different from typical graphene/semiconductor hybrid systems, we find that electronic spin can arise ``intrinsically'' in graphene owing to the exchange proximity interaction between electrons in graphene and localized electrons in the diamond surface rather than the characteristic graphene states. These predications strongly revive this new synthesized system as a viable candidate to overcome all the aforementioned challenges, providing an ideal platform for future graphene-based electronics.

Non-Equilibrium Superconductivity and Magnetic Pair Breaking in Perovskite Half-Metallic Ferromagnet-Insulator-Superconductor (F-I-S) Heterostructures

NASA Technical Reports Server (NTRS)

Fu, C.-C.; Yeh, N.-C.; Samoilov, A. V.; Vakili, K.; Li, Y.; Vasquez, R. P.

1999-01-01

The effect of spin-polarized quasiparticle currents on the critical current density (J-c) of cuprate superconductors is studied in perovskite F-I-S heterostructures as a function of insulator thickness and of underlying magnetic materials. A pulsed current technique is employed to minimize extraneous Joule heating on the superconductor. At temperatures near T-c, F-I-S samples with insulator thicknesses\\1e2nm show precipitous decrease in J_c as current injection (I_m) is increased. In contrast, J_c in a controlled sample with a substituted non-magnetic material (N-I-S) exhibit no dependence on I_m. Similarly, a F-I-S sample with a 10 mn insulating barrier also show little J_c effect versus I_m. At low temperatures with I_m = 0, significant suppression of J-c is observed only in the thin barrier F-I-S samples, although T_c and the normal-state resistivity of all samples are comparable. These phenomena can be attributed to the Cooper pair breaking induced by externally-injected and internally-reflected spin-polarized quasiparticle currents. We estimate an order of magnitude range for the spin diffusion length of 100 nm to 100\\ mum.

Differential-Integral method in polymer processing: Taking melt electrospinning technique for example

NASA Astrophysics Data System (ADS)

Haoyi, Li; Weimin, Yang; Hongbo, Chen; Jing, Tan; Pengcheng, Xie

2016-03-01

A concept of Differential-Integral (DI) method applied in polymer processing and molding was proposed, which included melt DI injection molding, DI nano-composites extrusion molding and melt differential electrospinning principle and equipment. Taking the melt differential electrospinning for example to introduce the innovation research progress, two methods preparing polymer ultrafine fiber have been developed: solution electro-spinning and melt electro-spinning, between which solution electro-spinning is much simpler to realize in lab. More than 100 institutions have endeavored to conduct research on it and more than 30 thousand papers have been published. However, its industrialization was restricted to some extend because of the existence of toxic solvent during spinning process and poor mechanical strength of resultant fibers caused by small pores on fiber surface. Solvent-free melt electrospinning is environmentally friendly and highly productive. However, problems such as the high melt viscosity, thick fiber diameter and complex equipment makes it relatively under researched compared with solution electrospinning. With the purpose of solving the shortage of traditional electro-spinning equipment with needles or capillaries, a melt differential electro-spinning method without needles or capillaries was firstly proposed. Nearly 50 related patents have been applied since 2005, and systematic method innovations and experimental studies have also been conducted. The prepared fiber by this method had exhibited small diameter and smooth surface. The average fiber diameter can reach 200-800 nm, and the single nozzle can yield two orders of magnitude more than the capillaries. Based on the above principle, complete commercial techniques and equipment have been developed to produce ultra-fine non-woven fabrics for the applications in air filtration, oil spill recovery and water treatment, etc.

Observation of spinon spin currents in one-dimensional spin liquid

NASA Astrophysics Data System (ADS)

Hirobe, Daichi; Sato, Masahiro; Kawamata, Takayuki; Shiomi, Yuki; Uchida, Ken-Ichi; Iguchi, Ryo; Koike, Yoji; Maekawa, Sadamichi; Saitoh, Eiji

To date, two types of spin current have been explored experimentally: conduction-electron spin current and spin-wave spin current. Here, we newly present spinon spin current in quantum spin liquid. An archetype of quantum spin liquid is realized in one-dimensional spin-1/2 chains with the spins coupled via antiferromagnetic interaction. Elementary excitation in such a system is known as a spinon. Theories have predicted that the correlation of spinons reaches over a long distance. This suggests that spin current may propagate via one-dimensional spinons even in spin liquid states. In this talk, we report the experimental observation that a spin liquid in a spin-1/2 quantum chain generates and conveys spin current, which is attributed to spinon spin current. This is demonstrated by observing an anisotropic negative spin Seebeck effect along the spin chains in Sr2CuO3. The results show that spin current can flow via quantum fluctuation in spite of the absence of magnetic order, suggesting that a variety of quantum spin systems can be applied to spintronics. Spin Quantum Rectification Project, ERATO, JST, Japan; PRESTO, JST, Japan.

Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology

NASA Astrophysics Data System (ADS)

Ishioka, Sachio; Fujikawa, Kazuo

2009-06-01

Committee -- Obituary: Professor Sadao Nakajima -- Opening address / H. Fukuyama -- Welcoming address / N. Osakabe -- Cold atoms and molecules. Pseudopotential method in cold atom research / C. N. Yang. Symmetry breaking in Bose-Einstein condensates / M. Ueda. Quantized vortices in atomic Bose-Einstein condensates / M. Tsubota. Quantum degenerate gases of Ytterbium atoms / S. Uetake ... [et al.]. Superfluid properties of an ultracold fermi gas in the BCS-BEC crossover region / Y. Ohashi, N. Fukushima. Fermionic superfluidity and the BEC-BCS crossover in ultracold atomic fermi gases / M. W. Zwierlein. Kibble-Zurek mechanism in magnetization of a spinor Bose-Einstein condensate / H. Saito, Y. Kawaguchi, M. Ueda. Quasiparticle inducing Josephson effect in a Bose-Einstein condensate / S. Tsuchiya, Y. Ohashi. Stability of superfluid fermi gases in optical lattices / Y. Yunomae ... [et al.]. Z[symbol] symmetry breaking in multi-band bosonic atoms confined by a two-dimensional harmonic potential / M. Sato, A. Tokuno -- Spin hall effect and anomalous hall effect. Recent advances in anomalous hall effect and spin hall effect / N. Nagaosa. Topological insulators and the quantum spin hall effect / C. L. Kane. Application of direct and inverse spin-hall effects: electric manipulation of spin relaxation and electric detection of spin currents / K. Ando, E. Saitoh. Novel current pumping mechanism by spin dynamics / A. Takeuchi, K. Hosono, G. Tatara. Quantum spin hall phase in bismuth ultrathin film / S. Murakami. Anomalous hall effect due to the vector chirality / K. Taguchi, G. Tatara. Spin current distributions and spin hall effect in nonlocal magnetic nanostructures / R. Sugano ... [et al.]. New boundary critical phenomenon at the metal-quantum spin hall insulator transition / H. Obuse. On scaling behaviors of anomalous hall conductivity in disordered ferromagnets studied with the coherent potential approximation / S. Onoda -- Magnetic domain wall dynamics and spin related phenomena. Dynamical magnetoelectric effects in multiferroics / Y. Tokura. Exchange-stabilization of spin accumulation in the two-dimensional electron gas with Rashba-type of spin-orbit interaction / H. M. Saarikoski, G. E. W. Bauer. Electronic Aharonov-Casher effect in InGaAs ring arrays / J. Nitta, M. Kohda, T. Bergsten. Microscopic theory of current-spin interaction in ferromagnets / H. Kohno ... [et al.]. Spin-polarized carrier injection effect in ferromagnetic semiconductor / diffusive semiconductor / superconductor junctions / H. Takayanagi ... [et al.]. Low voltage control of ferromagnetism in a semiconductor P-N junction / J. Wunderlich ... [et al.].Measurement of nanosecond-scale spin-transfer torque magnetization switching / K. Ito ... [et al.]. Current-induced domain wall creep in magnetic wires / J. Ieda, S. Maekawa, S. E. Barnes. Pure spin current injection into superconducting niobium wire / K. Ohnishi, T. Kimura, Y. Otani. Switching of a single atomic spin induced by spin injection: a model calculation / S. Kokado, K. Harigaya, A. Sakuma. Spin transfer torque in magnetic tunnel junctions with synthetic ferrimagnetic layers / M. Ichimura ... [et al.]. Gapless chirality excitations in one-dimensional spin-1/2 frustrated magnets / S. Furukawa ... [et al.] -- Dirac fermions in condensed matter. Electronic states of graphene and its multi-layers / T. Ando, M. Koshino. Inter-layer magnetoresistance in multilayer massless dirac fermions system [symbol]-(BEDT-TTF)[symbol]I[symbol] / N. Tajima ... [et al.]. Theory on electronic properties of gapless states in molecular solids [symbol]-(BEDT-TTF)[symbol]I[symbol] / A. Kobayashi, Y. Suzumura, H. Fukuyama. Hall effect and diamagnetism of bismuth / Y. Fuseya, M. Ogata, H. Fukuyama. Quantum Nernst effect in a bismuth single crystal / M. Matsuo ... [et al.] -- Quantum dot systems. Kondo effect and superconductivity in single InAs quantum dots contacted with superconducting leads / S. Tarucha ... [et al.]. Electron transport through a laterally coupled triple quantum dot forming Aharonov-Bohm interferometer / T. Kubo ... [et al.]. Aharonov-Bohm oscillations in parallel coupled vertical double quantum dot / T. Hatano ... [et al.]. Laterally coupled triple self-assembled quantum dots / S. Amaha ... [et al.]. Spectroscopy of charge states of a superconducting single-electron transistor in an engineered electromagnetic environment / E. Abe ... [et al.]. Numerical study of the coulomb blockade in an open quantum dot / Y. Hamamoto, T. Kato. Symmetry in the full counting statistics, the fluctuation theorem and an extension of the Onsager theorem in nonlinear transport regime / Y. Utsumi, K. Saito. Single-artificial-atom lasing and its suppression by strong pumping / J. R. Johansson ... [et al.] -- Entanglement and quantum information processing, qubit manipulations. Photonic entanglement in quantum communication and quantum computation / A. Zeilinger. Quantum non-demolition measurement of a superconducting flux qubit / J. E. Mooij. Atomic physics and quantum information processing with superconducting circuits / F. Nori. Theory of macroscopic quantum dynamics in high-T[symbol] Josephson junctions / S. Kawabata. Silicon isolated double quantum-dot qubit architectures / D. A. Williams ... [et al.]. Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use / M. G. Tanner ... [et al.].Modelling of charge qubits based on Si/SiO[symbol] double quantum dots / P. Howard, A. D. Andreev, D. A. Williams. InAs based quantum dots for quantum information processing: from fundamental physics to 'plug and play' devices / X. Xu ... [et al.]. Quantum aspects in superconducting qubit readout with Josephson bifurcation amplifier / H. Nakano ... [et al.]. Double-loop Josephson-junction flux qubit with controllable energy gap / Y. Shimazu, Y. Saito, Z. Wada. Noise characteristics of the Fano effect and Fano-Kondo effect in triple quantum dots, aiming at charge qubit detection / T. Tanamoto, Y. Nishi, S. Fujita. Geometric universal single qubit operation of cold two-level atoms / H. Imai, A. Morinaga. Entanglement dynamics in quantum Brownian motion / K. Shiokawa. Coupling superconducting flux qubits using AC magnetic flxues / Y. Liu, F. Nori. Entanglement purification using natural spin chain dynamics and single spin measurements / K. Maruyama, F. Nori. Experimental analysis of spatial qutrit entanglement of down-converted photon pairs / G. Taguchi ... [et al.]. On the phase sensitivity of two path interferometry using path-symmetric N-photon states / H. F. Hofmann. Control of multi-photon coherence using the mixing ratio of down-converted photons and weak coherent light / T. Ono, H. F. Hofmann -- Mechanical properties of confined geometry. Rattling as a novel anharmonic vibration in a solid / Z. Hiroi, J. Yamaura. Micro/nanomechanical systems for information processing / H. Yamaguchi, I. Mahboob -- Precise measurements. Electron phase microscopy for observing superconductivity and magnetism / A. Tonomura. Ratio of the Al[symbol] and Hg[symbol] optical clock frequencies to 17 decimal places / W. M. Itano ... [et al.]. STM and STS observation on titanium-carbide metallofullerenes: [symbol] / N. Fukui ... [et al.]. Single shot measurement of a silicon single electron transistor / T. Ferrus ... [et al.]. Derivation of sensitivity of a Geiger mode APDs detector from a given efficiency to estimate total photon counts / K. Hammura, D. A. Williams -- Novel properties in nano-systems. First principles study of electroluminescence in ultra-thin silicon film / Y. Suwa, S. Saito. First principles nonlinear optical spectroscopy / T. Hamada, T. Ohno. Field-induced disorder and carrier localization in molecular organic transistors / M. Ando ... [et al.]. Switching dynamics in strongly coupled Josephson junctions / H. Kashiwaya ... [et al.]. Towards quantum simulation with planar coulomb crystals / I. M. Buluta, S. Hasegawa -- Fundamental problems in quantum physics. The negative binomial distribution in quantum physics / J. Söderholm, S. Inoue. On the elementary decay process / D. Kouznetsov -- List of participants.

Conversion of spin current into charge current in a topological insulator: Role of the interface

NASA Astrophysics Data System (ADS)

Dey, Rik; Prasad, Nitin; Register, Leonard F.; Banerjee, Sanjay K.

2018-05-01

Three-dimensional spin current density injected onto the surface of a topological insulator (TI) produces a two-dimensional charge current density on the surface of the TI, which is the so-called inverse Edelstein effect (IEE). The ratio of the surface charge current density on the TI to the spin current density injected across the interface defined as the IEE length was shown to be exactly equal to the mean free path in the TI determined to be independent of the electron transmission rate across the interface [Phys. Rev. B 94, 184423 (2016), 10.1103/PhysRevB.94.184423]. However, we find that the transmission rate across the interface gives a nonzero contribution to the transport relaxation rate in the TI as well as to the effective IEE relaxation rate (over and above any surface hybridization effects), and the IEE length is always less than the original mean free path in the TI without the interface. We show that both the IEE relaxation time and the transport relaxation time in the TI are modified by the interface transmission time. The correction becomes significant when the transmission time across the interface becomes comparable to or less than the original momentum scattering time in the TI. This correction is similar to experimental results in Rashba electron systems in which the IEE relaxation time was found shorter in the case of direct interface with metal in which the interface transmission rate will be much higher, compared to interfaces incorporating insulating oxides. Our results indicate the continued importance of the interface to obtain a better spin-to-charge current conversion and a limitation to the conversion efficiency due to the quality of the interface.

Retrograde spins of near-Earth asteroids from the Yarkovsky effect.

PubMed

La Spina, A; Paolicchi, P; Kryszczyńska, A; Pravec, P

2004-03-25

Dynamical resonances in the asteroid belt are the gateway for the production of near-Earth asteroids (NEAs). To generate the observed number of NEAs, however, requires the injection of many asteroids into those resonant regions. Collisional processes have long been claimed as a possible source, but difficulties with that idea have led to the suggestion that orbital drift arising from the Yarkovsky effect dominates the injection process. (The Yarkovsky effect is a force arising from differential heating-the 'afternoon' side of an asteroid is warmer than the 'morning' side.) The two models predict different rotational properties of NEAs: the usual collisional theories are consistent with a nearly isotropic distribution of rotation vectors, whereas the 'Yarkovsky model' predicts an excess of retrograde rotations. Here we report that the spin vectors of NEAs show a strong and statistically significant excess of retrograde rotations, quantitatively consistent with the theoretical expectations of the Yarkovsky model.

Spin transfer and spin pumping in disordered normal metal-antiferromagnetic insulator systems

NASA Astrophysics Data System (ADS)

Gulbrandsen, Sverre A.; Brataas, Arne

2018-02-01

We consider an antiferromagnetic insulator that is in contact with a metal. Spin accumulation in the metal can induce spin-transfer torques on the staggered field and on the magnetization in the antiferromagnet. These torques relate to spin pumping: the emission of spin currents into the metal by a precessing antiferromagnet. We investigate how the various components of the spin-transfer torque are affected by spin-independent disorder and spin-flip scattering in the metal. Spin-conserving disorder reduces the coupling between the spins in the antiferromagnet and the itinerant spins in the metal in a manner similar to Ohm's law. Spin-flip scattering leads to spin-memory loss with a reduced spin-transfer torque. We discuss the concept of a staggered spin current and argue that it is not a conserved quantity. Away from the interface, the staggered spin current varies around a 0 mean in an irregular manner. A network model explains the rapid decay of the staggered spin current.

Arterial spin labeling blood flow magnetic resonance imaging for evaluation of renal injury.

PubMed

Liu, Yupin P; Song, Rui; Liang, Chang hong; Chen, Xin; Liu, Bo

2012-08-15

A multitude of evidence suggests that iodinated contrast material causes nephrotoxicity; however, there have been no previous studies that use arterial spin labeling (ASL) blood flow functional magnetic resonance imaging (fMRI) to investigate the alterations in effective renal plasma flow between normointensive and hypertensive rats following injection of contrast media. We hypothesized that FAIR-SSFSE arterial spin labeling MRI may enable noninvasive and quantitative assessment of regional renal blood flow abnormalities and correlate with disease severity as assessed by histological methods. Renal blood flow (RBF) values of the cortex and medulla of rat kidneys were obtained from ASL images postprocessed at ADW4.3 workstation 0.3, 24, 48, and 72 h before and after injection of iodinated contrast media (6 ml/kg). The H&E method for morphometric measurements was used to confirm the MRI findings. The RBF values of the outer medulla were lower than those of the cortex and the inner medulla as reported previously. Iodinated contrast media treatment resulted in decreases in RBF in the outer medulla and cortex in spontaneously hypertensive rats (SHR), but only in the outer medulla in normotensive rats. The iodinated contrast agent significantly decreased the RBF value in the outer medulla and the cortex in SHR compared with normotensive rats after injection of the iodinated contrast media. Histological observations of kidney morphology were also consistent with ASL perfusion changes. These results demonstrate that the RBF value can reflect changes of renal perfusion in the cortex and medulla. ASL-MRI is a feasible and accurate method for evaluating nephrotoxic drugs-induced kidney damage.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

NASA Astrophysics Data System (ADS)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Optically probing the fine structure of a single Mn atom in an InAs quantum dot.

PubMed

Kudelski, A; Lemaître, A; Miard, A; Voisin, P; Graham, T C M; Warburton, R J; Krebs, O

2007-12-14

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A0 whose effective spin J=1 is significantly perturbed by the quantum dot potential and its associated strain field. The spin interaction with photocarriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of mueV, but vanishingly small for electrons.

Effect of electron spin-spin interaction on level crossings and spin flips in a spin-triplet system

NASA Astrophysics Data System (ADS)

Jia, Wei; Hu, Fang-Qi; Wu, Ning; Zhao, Qing

2017-12-01

We study level crossings and spin flips in a system consisting of a spin-1 (an electron spin triplet) coupled to a nuclear spin of arbitrary size K , in the presence of a uniform magnetic field and the electron spin-spin interaction within the triplet. Through an analytical diagonalization based on the SU (3 ) Lie algebra, we find that the electron spin-spin interaction not only removes the curious degeneracy which appears in the absence of the interaction, but also produces some level anticrossings (LACs) for strong interactions. The real-time dynamics of the system shows that periodic spin flips occur at the LACs for arbitrary K , which might provide an option for nuclear or electron spin polarization.

Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

NASA Astrophysics Data System (ADS)

Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

2014-09-01

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

2015-02-14

We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

Polar-Core Spin Vortex of Quasi-2D Spin-2 Condensate in a Flat-Bottomed Optical Trap

NASA Astrophysics Data System (ADS)

Zheng, Gong-Ping; Chang, Gao-Zhan; Li, Pin; Li, Ting

2017-10-01

Motivated by the recent experiments realized in a flat-bottomed optical trap [Science 347 (2015) 167; Nat. Commun. 6 (2015) 6162], we study the ground state of polar-core spin vortex of quasi-2D spin-2 condensate in a homogeneous trap plus a weak magnetic field. The exact spatial distribution of local spin is obtained and the vortex core are observed to decrease with the growth of the effective spin-spin interaction. For the larger effective spin-spin interaction, the spatial distribution of spin magnitude in spin-2 condensate we obtained agrees well with that of spin-1 condensate in a homogeneous trap, where a polar-core spin vortex was schematically demonstrated as a fully-magnetized planar spin texture with a zero-spin core. The effective spin-spin interaction is proportional to both the bare spin-spin interaction and the radius of the homogeneous trap, simultaneously. Thus the polar-core spin vortex we obtained can be easily controlled by the radius of the trap. Supported by the National Natural Science Foundation of China under Grant No. 11274095, the Key Scientific Research Project of Henan Province of China under Grant No. 16A140011, and the High Performance Computing Center of Henan Normal University

Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2017-11-01

There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

Generation and stability of dynamical skyrmions and droplet solitons.

PubMed

Statuto, Nahuel; Hernàndez, Joan Manel; Kent, Andrew D; Macià, Ferran

2018-08-10

A spin-polarized current in a nanocontact to a magnetic film can create collective magnetic oscillations by compensating the magnetic damping. In particular, in materials with uniaxial magnetic anisotropy, droplet solitons have been observed-a self-localized excitation consisting of partially reversed magnetization that precesses coherently in the nanocontact region. It is also possible to generate topological droplet solitons, known as dynamical skyrmions (DSs). Here, we show that spin-polarized current thresholds for DS creation depend not only on the material's parameters but also on the initial magnetization state and the rise time of the spin-polarized current. We study the conditions that promote either droplet or DS formation and describe their stability in magnetic films without Dzyaloshinskii-Moriya interactions. The Oersted fields from the applied current, the initial magnetization state, and the rise time of the injected current can determine whether a droplet or a DS forms. DSs are found to be more stable than droplets. We also discuss electrical characteristics that can be used to distinguish these magnetic objects.

Entanglement of Electron Spins in Two Coupled Quantum Dots

NASA Astrophysics Data System (ADS)

Chen, Yuanzhen; Webb, Richard

2004-03-01

We study the entanglement of electron spins in a coupled quantum dots system at 70 mK. Two quantum dots are fabricated in a GaAs/AlGaAs heterostructure containing a high mobility 2-D electron gas. The two dots can be tuned independently and the electron spins in the dots are coupled through an exchange interaction between them. An exchange gate is used to vary the height and width of a potential barrier between the two dots, thus controlling the strength of the exchange interaction. Electrons are injected to the coupled dots by two independent DC currents and the output of the dots is incident on a beam splitter, which introduces quantum interferences. Cross-correlations of the shot noise of currents from the two output channels are measured and compared with theory (1). *Work supported by LPS and ARDA under MDA90401C0903 and NSF under DMR 0103223. (1) Burkard, Loss, & Sukhorukov, Phys. Rev. B61, R16303 (2000).

Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

NASA Astrophysics Data System (ADS)

Hayakawa, Naoki; Muneta, Iriya; Ohashi, Takumi; Matsuura, Kentaro; Shimizu, Jun’ichi; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

2018-04-01

Molybdenum disulfide (MoS2) among two-dimensional semiconductor films is promising for spintronic devices because it has a longer spin-relaxation time with contrasting spin splitting than silicon. However, it is difficult to fabricate integrated circuits by the widely used exfoliation method. Here, we investigate the contact characteristics in the Fe/Al2O3/sputtered-MoS2 system with various thicknesses of the Al2O3 film. Current density increases with increasing thickness up to 2.5 nm because of both thermally-assisted and direct tunneling currents. On the other hand, it decreases with increasing thickness over 2.5 nm limited by direct tunneling currents. These results suggest that the Schottky barrier width can be controlled by changing thicknesses of the Al2O3 film, as supported by calculations. The reduction of conductance mismatch with this technique can lead to highly efficient spin injection from iron into the MoS2 film.

Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

2018-04-01

This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

Macrospin dynamics in antiferromagnets triggered by sub-20 femtosecond injection of nanomagnons.

PubMed

Bossini, D; Dal Conte, S; Hashimoto, Y; Secchi, A; Pisarev, R V; Rasing, Th; Cerullo, G; Kimel, A V

2016-02-05

The understanding of how the sub-nanoscale exchange interaction evolves in macroscale correlations and ordered phases of matter, such as magnetism and superconductivity, requires to bridging the quantum and classical worlds. This monumental challenge has so far only been achieved for systems close to their thermodynamical equilibrium. Here we follow in real time the ultrafast dynamics of the macroscale magnetic order parameter in the Heisenberg antiferromagnet KNiF3 triggered by the impulsive optical generation of spin excitations with the shortest possible nanometre wavelength and femtosecond period. Our magneto-optical pump-probe experiments also demonstrate the coherent manipulation of the phase and amplitude of these femtosecond nanomagnons, whose frequencies are defined by the exchange energy. These findings open up opportunities for fundamental research on the role of short-wavelength spin excitations in magnetism and strongly correlated materials; they also suggest that nanospintronics and nanomagnonics can employ coherently controllable spin waves with frequencies in the 20 THz domain.

Macrospin dynamics in antiferromagnets triggered by sub-20 femtosecond injection of nanomagnons

NASA Astrophysics Data System (ADS)

Bossini, D.; Dal Conte, S.; Hashimoto, Y.; Secchi, A.; Pisarev, R. V.; Rasing, Th.; Cerullo, G.; Kimel, A. V.

2016-02-01

The understanding of how the sub-nanoscale exchange interaction evolves in macroscale correlations and ordered phases of matter, such as magnetism and superconductivity, requires to bridging the quantum and classical worlds. This monumental challenge has so far only been achieved for systems close to their thermodynamical equilibrium. Here we follow in real time the ultrafast dynamics of the macroscale magnetic order parameter in the Heisenberg antiferromagnet KNiF3 triggered by the impulsive optical generation of spin excitations with the shortest possible nanometre wavelength and femtosecond period. Our magneto-optical pump-probe experiments also demonstrate the coherent manipulation of the phase and amplitude of these femtosecond nanomagnons, whose frequencies are defined by the exchange energy. These findings open up opportunities for fundamental research on the role of short-wavelength spin excitations in magnetism and strongly correlated materials; they also suggest that nanospintronics and nanomagnonics can employ coherently controllable spin waves with frequencies in the 20 THz domain.

Current-driven non-linear magnetodynamics in exchange-biased spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seinige, Heidi; Wang, Cheng; Tsoi, Maxim, E-mail: tsoi@physics.utexas.edu

2015-05-07

This work investigates the excitation of parametric resonance in exchange-biased spin valves (EBSVs). Using a mechanical point contact, high density dc and microwave currents were injected into the EBSV sample. Observing the reflected microwave power and the small rectification voltage that develops across the contact allows detecting the current-driven magnetodynamics not only in the bulk sample but originating exclusively from the small contact region. In addition to ferromagnetic resonance (FMR), parametric resonance at twice the natural FMR frequency was observed. In contrast to FMR, this non-linear resonance was excited only in the vicinity of the point contact where current densitiesmore » are high. Power-dependent measurements displayed a typical threshold-like behavior of parametric resonance and a broadening of the instability region with increasing power. Parametric resonance showed a linear shift as a function of applied dc bias which is consistent with the field-like spin-transfer torque induced by current on magnetic moments in EBSV.« less

Spin-orbit-torque-induced skyrmion dynamics for different types of spin-orbit coupling

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Kim, Kyoung-Whan; Lee, Hyun-Woo; Lee, Kyung-Jin

2018-06-01

We investigate current-induced skyrmion dynamics in the presence of Dzyaloshinskii-Moriya interaction and spin-orbit spin-transfer torque corresponding to various types of spin-orbit coupling. We determine the symmetries of Dzyaloshinskii-Moriya interaction and spin-orbit spin-transfer torque based on linear spin-orbit coupling model. We find that like interfacial Dzyaloshinskii-Moriya interaction (Rashba spin-orbit coupling) and bulk Dzyaloshinskii-Moriya interaction (Weyl spin-orbit coupling), Dresselhaus spin-orbit coupling also has a possibility for stabilizing skyrmion and current-induced skyrmion dynamics.

Spin Hall and Spin Swapping Torques in Diffusive Ferromagnets

NASA Astrophysics Data System (ADS)

Pauyac, Christian Ortiz; Chshiev, Mairbek; Manchon, Aurelien; Nikolaev, Sergey A.

2018-04-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession, and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precession effects displays a complex spatial dependence that can be exploited to generate torques and nucleate or propagate domain walls in centrosymmetric geometries without the use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin pumping and inverse spin Hall effects—Insights for future spin-orbitronics (invited)

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2015-03-13

Quantification of spin-charge interconversion has become increasingly important in the fast-developing field of spin-orbitronics. Pure spin current generated by spin pumping acts a sensitive probe for many bulk and interface spin-orbit effects, which has been indispensable for the discovery of many promising new spin-orbit materials. Here, we apply spin pumping and inverse spin Hall effect experiments, as a useful metrology, and study spin-orbit effects in a variety of metals and metal interfaces. We also quantify the spin Hall effects in Ir and W using the conventional bilayer structures, and discuss the self-induced voltage in a single layer of ferromagnetic permalloy.more » Finally, we extend our discussions to multilayer structures and quantitatively reveal the spin current flow in two consecutive normal metal layers.« less

Eavesdropping on spin waves inside the domain-wall nanochannel via three-magnon processes

NASA Astrophysics Data System (ADS)

Zhang, Beining; Wang, Zhenyu; Cao, Yunshan; Yan, Peng; Wang, X. R.

2018-03-01

One recent breakthrough in the field of magnonics is the experimental realization of reconfigurable spin-wave nanochannels formed by a magnetic domain wall with a width of 10-100 nm [Wagner et al., Nat. Nano. 11, 432 (2016), 10.1038/nnano.2015.339]. This remarkable progress enables an energy-efficient spin-wave propagation with a well-defined wave vector along its propagating path inside the wall. In the mentioned experiment, a microfocus Brillouin light scattering spectroscopy was taken in a line-scans manner to measure the frequency of the bounded spin wave. Due to their localization nature, the confined spin waves can hardly be detected from outside the wall channel, which guarantees the information security to some extent. In this work, we theoretically propose a scheme to detect/eavesdrop on the spin waves inside the domain-wall nanochannel via nonlinear three-magnon processes. We send a spin wave (ωi,ki) in one magnetic domain to interact with the bounded mode (ωb,kb) in the wall, where kb is parallel with the domain-wall channel defined as the z ̂ axis. Two kinds of three-magnon processes, i.e., confluence and splitting, are expected to occur. The confluence process is conventional: conservation of energy and momentum parallel with the wall indicates a transmitted wave in the opposite domain with ω (k ) =ωi+ωb and (ki+kb-k ) .z ̂=0 , while the momentum perpendicular to the domain wall is not necessary to be conserved due to the nonuniform internal field near the wall. We predict a stimulated three-magnon splitting (or "magnon laser") effect: the presence of a bound magnon propagating along the domain wall channel assists the splitting of the incident wave into two modes, one is ω1=ωb,k1=kb identical to the bound mode in the channel, and the other one is ω2=ωi-ωb with (ki-kb-k2) .z ̂=0 propagating in the opposite magnetic domain. Micromagnetic simulations confirm our theoretical analysis. These results demonstrate that one is able to uniquely infer the spectrum of the spin wave in the domain-wall nanochannel once we know both the injection and the transmitted waves.

Thermally Generated Spin Signals in a Nondegenerate Silicon Spin Valve

NASA Astrophysics Data System (ADS)

Yamashita, Naoto; Ando, Yuichiro; Koike, Hayato; Miwa, Shinji; Suzuki, Yoshishige; Shiraishi, Masashi

2018-05-01

Thermally generated spin signals are observed in a nondegenerate Si spin valve. The spin-dependent Seebeck effect is used for thermal spin-signal generation. A thermal gradient of about 200 mK at the interface of Fe and Si enables the generation of a spin voltage of 8 μ V at room temperature. A simple expansion of the conventional spin-drift-diffusion model that takes into account the spin-dependent Seebeck effect shows that semiconductor materials are more promising for thermal spin-signal generation comparing than metallic materials, and thus enable efficient heat recycling in semiconductor spin devices.

Magnetization curves of di-, tri- and tetramerized mixed spin-1 and spin-2 Heisenberg chains

NASA Astrophysics Data System (ADS)

Karľová, Katarína; Strečka, Jozef

2018-05-01

Magnetization curves of ferrimagnetic mixed spin-1 and spin-2 Heisenberg chains are calculated with the help of density-matrix renormalization group method and quantum Monte Carlo simulations by considering a spin dimerization (1,2), trimerization (1,1,2) and tetramerization (1,1,1,2). The investigated mixed-spin Heisenberg chains can be alternatively viewed as a pure spin-1 Heisenberg chain, which contains at a regular lattice positions spin-2 particles. Unlike the antiferromagnetic spin-1 Heisenberg chain solely displaying a zero magnetization plateau due to the Haldane phase, the ferrimagnetic mixed spin-(1,2), spin-(1,1,2) and spin-(1,1,1,2) Heisenberg chains exhibit more striking magnetization curves involving at least two intermediate magnetization plateaux and quantum spin-liquid states.

Radiation reaction for spinning bodies in effective field theory. II. Spin-spin effects

NASA Astrophysics Data System (ADS)

Maia, Natália T.; Galley, Chad R.; Leibovich, Adam K.; Porto, Rafael A.

2017-10-01

We compute the leading post-Newtonian (PN) contributions at quadratic order in the spins to the radiation-reaction acceleration and spin evolution for binary systems, entering at four-and-a-half PN order. Our calculation includes the backreaction from finite-size spin effects, which is presented for the first time. The computation is carried out, from first principles, using the effective field theory framework for spinning extended objects. At this order, nonconservative effects in the spin-spin sector are independent of the spin supplementary conditions. A nontrivial consistency check is performed by showing that the energy loss induced by the resulting radiation-reaction force is equivalent to the total emitted power in the far zone. We find that, in contrast to the spin-orbit contributions (reported in a companion paper), the radiation reaction affects the evolution of the spin vectors once spin-spin effects are incorporated.

Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence

PubMed Central

Ma, Wen-Long; Wolfowicz, Gary; Zhao, Nan; Li, Shu-Shen; Morton, John J.L.; Liu, Ren-Bao

2014-01-01

Central spin decoherence caused by nuclear spin baths is often a critical issue in various quantum computing schemes, and it has also been used for sensing single-nuclear spins. Recent theoretical studies suggest that central spin decoherence can act as a probe of many-body physics in spin baths; however, identification and detection of many-body correlations of nuclear spins in nanoscale systems are highly challenging. Here, taking a phosphorus donor electron spin in a 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in decoherence of the central spin under multiple-pulse dynamical decoupling control. We demonstrate that under control by an odd or even number of pulses, the central spin decoherence is principally caused by second- or fourth-order nuclear spin correlations, respectively. This study marks an important step toward studying many-body physics using spin qubits. PMID:25205440

Prediction of Spin-Polarization Effects in Quantum Wire Transport

NASA Astrophysics Data System (ADS)

Fasol, Gerhard; Sakaki, Hiroyuki

1994-01-01

We predict a new effect for transport in quantum wires: spontaneous spin polarization. Most work on transport in mesoscopic devices has assumed a model of non interacting, spin-free electrons. We introduce spin, electron pair scattering and microscopic crystal properties into the design of mesoscopic devices. The new spin polarization effect results from the fact that in a single mode quantum wire, electron and hole bands still have two spin subbands. In general, these two spin subbands are expected to be split even in zero magnetic field. At sufficiently low temperatures the electron pair scattering rates for one spin subband ( e.g., the spin-down) can be much larger than for the other spin subband. This effect can be used for an active spin polarizer device: hot electrons in one subband ( e.g., `spin up') pass with weak pair scattering, while electrons in the opposite subband ( e.g., `spin down'), have high probability of scattering into the `spin-up' subband, resulting in spin polarization of a hot electron beam.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

NASA Astrophysics Data System (ADS)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Controlling electric and magnetic currents in artificial spin ice (Presentation Recording)

NASA Astrophysics Data System (ADS)

Branford, Will R.

2015-09-01

I will discuss the collective properties of arrays of single domain nanomagnets called Artificial Spin Ice.1 The shape of each nanomagnet controls the magnetic anisotropy and the elements are closely spaced so dipolar interactions are important. The honeycomb lattice geometry prevents the satisfaction of all dipole interactions. Here I will show direct magnetic imaging studies of magnetic charge flow.2 The magnetic charge is carried by transverse domain walls and the chirality of the domain wall is found to control the direction of propagation.3,4 Injection of domain walls within the arrays with local fields is also explored.5 References 1 Branford, W. R., Ladak, S., Read, D. E., Zeissler, K. and Cohen, L. F. Emerging Chirality in Artificial Spin Ice. Science 335, 1597-1600, (2012). 2 Ladak, S., Read, D. E., Perkins, G. K., Cohen, L. F. and Branford, W. R. Direct observation of magnetic monopole defects in an artificial spin-ice system. Nature Physics 6, 359-363, (2010). 3 Burn, D. M., Chadha, M., Walton, S. K. and Branford, W. R. Dynamic interaction between domain walls and nanowire vertices. Phys. Rev. B 90, 144414, (2014). 4 Zeissler, K., Walton, S. K., Ladak, S., Read, D. E., Tyliszczak, T., Cohen, L. F. and Branford, W. R. The non-random walk of chiral magnetic charge carriers in artificial spin ice. Sci Rep-Uk 3, 1252, (2013). 5 Pushp, A., Phung, T., Rettner, C., Hughes, B. P., Yang, S. H., Thomas, L. and Parkin, S. S. P. Domain wall trajectory determined by its fractional topological edge defects. Nature Physics 9, 505-511, (2013).

Separated spin-up and spin-down quantum hydrodynamics of degenerated electrons: Spin-electron acoustic wave appearance.

PubMed

Andreev, Pavel A

2015-03-01

The quantum hydrodynamic (QHD) model of charged spin-1/2 particles contains physical quantities defined for all particles of a species including particles with spin-up and with spin-down. Different populations of states with different spin directions are included in the spin density (the magnetization). In this paper I derive a QHD model, which separately describes spin-up electrons and spin-down electrons. Hence electrons with different projections of spins on the preferable direction are considered as two different species of particles. It is shown that the numbers of particles with different spin directions do not conserve. Hence the continuity equations contain sources of particles. These sources are caused by the interactions of the spins with the magnetic field. Terms of similar nature arise in the Euler equation. The z projection of the spin density is no longer an independent variable. It is proportional to the difference between the concentrations of the electrons with spin-up and the electrons with spin-down. The propagation of waves in the magnetized plasmas of degenerate electrons is considered. Two regimes for the ion dynamics, the motionless ions and the motion of the degenerate ions as the single species with no account of the spin dynamics, are considered. It is shown that this form of the QHD equations gives all solutions obtained from the traditional form of QHD equations with no distinction of spin-up and spin-down states. But it also reveals a soundlike solution called the spin-electron acoustic wave. Coincidence of most solutions is expected since this derivation was started with the same basic equation: the Pauli equation. Solutions arise due to the different Fermi pressures for the spin-up electrons and the spin-down electrons in the magnetic field. The results are applied to degenerate electron gas of paramagnetic and ferromagnetic metals in the external magnetic field. The dispersion of the spin-electron acoustic waves in the partially spin-polarized degenerate neutron matter are also considered.

Loschmidt echo in many-spin systems: a quest for intrinsic decoherence and emergent irreversibility

NASA Astrophysics Data System (ADS)

Zangara, Pablo R.; Pastawski, Horacio M.

2017-03-01

If a magnetic polarization excess is locally injected in a crystal of interacting spins in thermal equilibrium, this ‘excitation’ would spread as consequence of spin-spin interactions. Such an apparently irreversible process is known as spin diffusion and it can lead the system back to ‘equilibrium’. Even so, a unitary quantum dynamics would ensure a precise memory of the non-equilibrium initial condition. Then, if at a certain time, say t/2, an experimental protocol reverses the many-body dynamics by changing the sign of the effective Hamiltonian, it would drive the system back to the initial non-equilibrium state at time t. As a matter of fact, the reversal is always perturbed by small experimental imperfections and/or uncontrolled internal or environmental degrees of freedom. This limits the amount of signal M(t) recovered locally at time t. The degradation of M(t) accounts for these perturbations, which can also be seen as the sources of decoherence. This general idea defines the Loschmidt echo (LE), which embodies the various time-reversal procedures implemented in nuclear magnetic resonance. Here, we present an invitation to the study of the LE following the pathway induced by the experiments. With such a purpose, we provide a historical and conceptual overview that briefly revisits selected phenomena that underlie the LE dynamics including chaos, decoherence, localization and equilibration. This guiding thread ultimately leads us to the discussion of decoherence and irreversibility as an emergent phenomenon. In addition, we introduce the LE formalism by means of spin-spin correlation functions in a manner suitable for presentation in a broad scope physics journal. Last, but not least, we present new results that could trigger new experiments and theoretical ideas. In particular, we propose to transform an initially localized excitation into a more complex initial state, enabling a dynamically prepared LE. This induces a global definition of the LE in terms of the raw overlap between many-body wave functions. Our results show that as the complexity of the prepared state increases, it becomes more fragile towards small perturbations.

Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)

NASA Astrophysics Data System (ADS)

Zollner, Klaus; Gmitra, Martin; Frank, Tobias; Fabian, Jaroslav

2016-10-01

Graphene, being essentially a surface, can borrow some properties of an insulating substrate (such as exchange or spin-orbit couplings) while still preserving a great degree of autonomy of its electronic structure. Such derived properties are commonly labeled as proximity. Here we perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin splitting of the graphene bands is of the order of 10 meV for a monolayer of hBN, decreasing in magnitude but alternating in sign by adding each new insulating layer. We find that the proximity exchange can be giant if there is a resonant d level of the transition metal close to the Dirac point. Our calculations suggest that this effect could be present in Co heterostructures, in which a d level strongly hybridizes with the valence-band orbitals of graphene. Since this hybridization is spin dependent, the proximity spin splitting is unusually large, about 10 meV even for two layers of hBN. An external electric field can change the offset of the graphene and transition-metal orbitals and can lead to a reversal of the sign of the exchange parameter. This we predict to happen for the case of two monolayers of hBN, enabling electrical control of proximity spin polarization (but also spin injection) in graphene/hBN/Co structures. Nickel-based heterostructures show weaker proximity effects than cobalt heterostructures. We introduce two phenomenological models to describe the first-principles data. The minimal model comprises the graphene (effective) pz orbitals and can be used to study transport in graphene with proximity exchange, while the pz-d model also includes hybridization with d orbitals, which is important to capture the giant proximity exchange. Crucial to both models is the pseudospin-dependent exchange coupling, needed to describe the different spin splittings of the valence and conduction bands.

Spin temperature concept verified by optical magnetometry of nuclear spins

NASA Astrophysics Data System (ADS)

Vladimirova, M.; Cronenberger, S.; Scalbert, D.; Ryzhov, I. I.; Zapasskii, V. S.; Kozlov, G. G.; Lemaître, A.; Kavokin, K. V.

2018-01-01

We develop a method of nonperturbative optical control over adiabatic remagnetization of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization. These findings open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces.

Y{sub 3}Fe{sub 5}O{sub 12} spin pumping for quantitative understanding of pure spin transport and spin Hall effect in a broad range of materials (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhui; Wang, Hailong; Hammel, P. Chris

2015-05-07

Using Y{sub 3}Fe{sub 5}O{sub 12} (YIG) thin films grown by our sputtering technique, we study dynamic spin transport in nonmagnetic, ferromagnetic, and antiferromagnetic (AF) materials by ferromagnetic resonance spin pumping. From both inverse spin Hall effect and damping enhancement, we determine the spin mixing conductance and spin Hall angle in many metals. Surprisingly, we observe robust spin conduction in AF insulators excited by an adjacent YIG at resonance. This demonstrates that YIG spin pumping is a powerful and versatile tool for understanding spin Hall physics, spin-orbit coupling, and magnetization dynamics in a broad range of materials.

Adiabatic quantum computing with spin qubits hosted by molecules.

PubMed

Yamamoto, Satoru; Nakazawa, Shigeaki; Sugisaki, Kenji; Sato, Kazunobu; Toyota, Kazuo; Shiomi, Daisuke; Takui, Takeji

2015-01-28

A molecular spin quantum computer (MSQC) requires electron spin qubits, which pulse-based electron spin/magnetic resonance (ESR/MR) techniques can afford to manipulate for implementing quantum gate operations in open shell molecular entities. Importantly, nuclear spins, which are topologically connected, particularly in organic molecular spin systems, are client qubits, while electron spins play a role of bus qubits. Here, we introduce the implementation for an adiabatic quantum algorithm, suggesting the possible utilization of molecular spins with optimized spin structures for MSQCs. We exemplify the utilization of an adiabatic factorization problem of 21, compared with the corresponding nuclear magnetic resonance (NMR) case. Two molecular spins are selected: one is a molecular spin composed of three exchange-coupled electrons as electron-only qubits and the other an electron-bus qubit with two client nuclear spin qubits. Their electronic spin structures are well characterized in terms of the quantum mechanical behaviour in the spin Hamiltonian. The implementation of adiabatic quantum computing/computation (AQC) has, for the first time, been achieved by establishing ESR/MR pulse sequences for effective spin Hamiltonians in a fully controlled manner of spin manipulation. The conquered pulse sequences have been compared with the NMR experiments and shown much faster CPU times corresponding to the interaction strength between the spins. Significant differences are shown in rotational operations and pulse intervals for ESR/MR operations. As a result, we suggest the advantages and possible utilization of the time-evolution based AQC approach for molecular spin quantum computers and molecular spin quantum simulators underlain by sophisticated ESR/MR pulsed spin technology.

Bulk electron spin polarization generated by the spin Hall current

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2006-07-01

It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

Is perpendicular magnetic anisotropy essential to all-optical ultrafast spin reversal in ferromagnets?

NASA Astrophysics Data System (ADS)

Zhang, G. P.; Bai, Y. H.; George, Thomas F.

2017-10-01

All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown whether PMA is necessary for spin reversal. Here we theoretically investigate magnetic thin films with either PMA or in-plane magnetic anisotropy (IMA). Our results show that spin reversal in IMA systems is possible, but only with a longer laser pulse and within a narrow laser parameter region. Spin reversal does not show a strong helicity dependence where the left- and right-circularly polarized light lead to the identical results. By contrast, the spin reversal in PMA systems is robust, provided both the spin angular momentum and laser field are strong enough while the magnetic anisotropy itself is not too strong. This explains why experimentally the majority of all-optical spin-reversal samples are found to have strong PMA and why spins in Fe nanoparticles only cant out of plane. It is the laser-induced spin-orbit torque that plays a key role in the spin reversal. Surprisingly, the same spin-orbit torque results in laser-induced spin rectification in spin-mixed configuration, a prediction that can be tested experimentally. Our results clearly point out that PMA is essential to spin reversal, though there is an opportunity for in-plane spin reversal.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

NASA Astrophysics Data System (ADS)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-05-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy

2015-05-07

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this usingmore » inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.« less

Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

NASA Astrophysics Data System (ADS)

Hao, Runrun; Zhong, Hai; Kang, Yun; Tian, Yufei; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo; Kang, Shishou

2018-03-01

The spin transparency at the normal/ferromagnetic metal (NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect (SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect (ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents ({{\\boldsymbol{σ }}}sc}), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 (Py) than that of Ni is obtained from the nonlocal voltage measurements. Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

Dynamics of a localized spin excitation close to the spin-helix regime

NASA Astrophysics Data System (ADS)

Salis, Gian; Walser, Matthias; Altmann, Patrick; Reichl, Christian; Wegscheider, Werner

2014-03-01

The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of a finite spatial extension of the initial spin polarization are studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value q0 of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width w of the spin excitation reduces the spin polarization by a factor that approaches exp(-q02w2 / 2) at longer times. This result bridges the gap between the formation of a long-lived helical spin mode and a spatially homogeneous spin decay described by the Dyakonov-Perel mechanism. This work is financially supported by NCCR QSIT.

Noise in tunneling spin current across coupled quantum spin chains

NASA Astrophysics Data System (ADS)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

Bending strain engineering in quantum spin hall system for controlling spin currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bing; Jin, Kyung-Hwan; Cui, Bin

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curvedmore » quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.« less

Bending strain engineering in quantum spin hall system for controlling spin currents

DOE PAGES

Huang, Bing; Jin, Kyung-Hwan; Cui, Bin; ...

2017-06-16

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curvedmore » quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.« less

Enhanced Spin Conductance of a Thin-Film Insulating Antiferromagnet

NASA Astrophysics Data System (ADS)

Bender, Scott A.; Skarsvâg, Hans; Brataas, Arne; Duine, Rembert A.

2017-08-01

We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to spin biasing and a temperature gradient, we compute the spin transport through a normal-metal-antiferromagnet-normal-metal heterostructure. We show that the spin conductance diverges as one approaches the spin-flop transition; this enhancement of the conductance should be readily observable by sweeping the magnetic field across the spin-flop transition. The results from such experiments may, on the one hand, enhance our understanding of spin transport near a phase transition, and on the other be useful for applications that require a large degree of tunability of spin currents. In contrast, the spin Seebeck coefficient does not diverge at the spin-flop transition. Furthermore, the spin Seebeck coefficient is finite even at zero magnetic field, provided that the normal metal contacts break the symmetry between the antiferromagnetic sublattices.

Gate-Driven Pure Spin Current in Graphene

NASA Astrophysics Data System (ADS)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Controlling the quantum dynamics of a mesoscopic spin bath in diamond

PubMed Central

de Lange, Gijs; van der Sar, Toeno; Blok, Machiel; Wang, Zhi-Hui; Dobrovitski, Viatcheslav; Hanson, Ronald

2012-01-01

Understanding and mitigating decoherence is a key challenge for quantum science and technology. The main source of decoherence for solid-state spin systems is the uncontrolled spin bath environment. Here, we demonstrate quantum control of a mesoscopic spin bath in diamond at room temperature that is composed of electron spins of substitutional nitrogen impurities. The resulting spin bath dynamics are probed using a single nitrogen-vacancy (NV) centre electron spin as a magnetic field sensor. We exploit the spin bath control to dynamically suppress dephasing of the NV spin by the spin bath. Furthermore, by combining spin bath control with dynamical decoupling, we directly measure the coherence and temporal correlations of different groups of bath spins. These results uncover a new arena for fundamental studies on decoherence and enable novel avenues for spin-based magnetometry and quantum information processing. PMID:22536480

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

NASA Astrophysics Data System (ADS)

Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

2017-11-01

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

The classical and quantum dynamics of molecular spins on graphene.

PubMed

Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

2016-02-01

Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic and quantum computing devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics and electrical spin manipulation. However, the influence of the graphene environment on the spin systems has yet to be unravelled. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets on graphene. Whereas the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly developed model. Coupling to Dirac electrons introduces a dominant quantum relaxation channel that, by driving the spins over Villain's threshold, gives rise to fully coherent, resonant spin tunnelling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin manipulation in graphene nanodevices.

The classical and quantum dynamics of molecular spins on graphene

NASA Astrophysics Data System (ADS)

Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

2016-02-01

Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic and quantum computing devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics and electrical spin manipulation. However, the influence of the graphene environment on the spin systems has yet to be unravelled. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets on graphene. Whereas the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly developed model. Coupling to Dirac electrons introduces a dominant quantum relaxation channel that, by driving the spins over Villain’s threshold, gives rise to fully coherent, resonant spin tunnelling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin manipulation in graphene nanodevices.

Effect of hyperfine-induced spin mixing on the defect-enabled spin blockade and spin filtering in GaNAs

NASA Astrophysics Data System (ADS)

Puttisong, Y.; Wang, X. J.; Buyanova, I. A.; Chen, W. M.

2013-03-01

The effect of hyperfine interaction (HFI) on the recently discovered room-temperature defect-enabled spin-filtering effect in GaNAs alloys is investigated both experimentally and theoretically based on a spin Hamiltonian analysis. We provide direct experimental evidence that the HFI between the electron and nuclear spin of the central Ga atom of the spin-filtering defect, namely, the Gai interstitials, causes strong mixing of the electron spin states of the defect, thereby degrading the efficiency of the spin-filtering effect. We also show that the HFI-induced spin mixing can be suppressed by an application of a longitudinal magnetic field such that the electronic Zeeman interaction overcomes the HFI, leading to well-defined electron spin states beneficial to the spin-filtering effect. The results provide a guideline for further optimization of the defect-engineered spin-filtering effect.

Gate-driven pure spin current in graphene

NASA Astrophysics Data System (ADS)

Lin, Xiaoyang; Su, Li; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Zhao, Weisheng; Fert, Albert

An important challenge of spin current based devices is to realize long-distance transport and efficient manipulation of pure spin current without frequent spin-charge conversions. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of conductivity and spin diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel spin relaxation mechanism results in more appreciable demultiplexing performance, which also implies a feasible strategy to characterize the spin relaxation mechanisms. The unique feature of the pure spin current demultiplexing operation would pave a way for ultra-low power spin logic beyond CMOS. Supported by the NSFC (61627813, 51602013) and the 111 project (B16001).

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

NASA Astrophysics Data System (ADS)

Saidaoui, Hamed Ben Mohamed; Manchon, A.

2016-07-01

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ . While the spin Hall effect dominates in the diffusive limit (d ≫λ ), spin swapping dominates in the Knudsen regime (d ≲λ ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

NASA Astrophysics Data System (ADS)

Torres, Williams Savero; Marty, Alain; Laczkowski, Piotr; Jamet, Matthieu; Vila, Laurent; Attané, Jean-Philippe

2018-02-01

Determination of spin accumulations and spin currents is essential for a deep understanding of spin transport in nanostructures and further optimization of spintronic devices. So far, they are easily obtained using different approaches in nanostructures composed of few elements; however their calculation becomes complicated as the number of elements increases. Here, we propose a 1-D spin resistor approach to calculate analytically spin accumulations, spin currents and magneto-resistances in heterostructures. Our method, particularly applied to multi-terminal metallic nanostructures, provides a fast and systematic mean to determine such spin properties in structures where conventional methods remain complex.

Control of electron spin decoherence in nuclear spin baths

NASA Astrophysics Data System (ADS)

Liu, Ren-Bao

2011-03-01

Nuclear spin baths are a main mechanism of decoherence of spin qubits in solid-state systems, such as quantum dots and nitrogen-vacancy (NV) centers of diamond. The decoherence results from entanglement between the electron and nuclear spins, established by quantum evolution of the bath conditioned on the electron spin state. When the electron spin is flipped, the conditional bath evolution is manipulated. Such manipulation of bath through control of the electron spin not only leads to preservation of the center spin coherence but also demonstrates quantum nature of the bath. In an NV center system, the electron spin effectively interacts with hundreds of 13 C nuclear spins. Under repeated flip control (dynamical decoupling), the electron spin coherence can be preserved for a long time (> 1 ms) . Thereforesomecharacteristicoscillations , duetocouplingtoabonded 13 C nuclear spin pair (a dimer), are imprinted on the electron spin coherence profile, which are very sensitive to the position and orientation of the dimer. With such finger-print oscillations, a dimer can be uniquely identified. Thus, we propose magnetometry with single-nucleus sensitivity and atomic resolution, using NV center spin coherence to identify single molecules. Through the center spin coherence, we could also explore the many-body physics in an interacting spin bath. The information of elementary excitations and many-body correlations can be extracted from the center spin coherence under many-pulse dynamical decoupling control. Another application of the preserved spin coherence is identifying quantumness of a spin bath through the back-action of the electron spin to the bath. We show that the multiple transition of an NV center in a nuclear spin bath can have longer coherence time than the single transition does, when the classical noises due to inhomogeneous broadening is removed by spin echo. This counter-intuitive result unambiguously demonstrates the quantumness of the nuclear spin bath. This work was supported by Hong Kong RGC/GRF CUHK402207, CUHK402209, and CUHK402410. The author acknowledges collaboration with Nan Zhao, Jian-Liang Hu, Sai Wah Ho, Jones T. K. Wan, and Jiangfeng Du.

Physics and application of persistent spin helix state in semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

Polar-core spin vortex of quasi-2D ferromagnetic spin-1 condensate in a flat-bottomed optical trap with a weak magnetic field

NASA Astrophysics Data System (ADS)

Zheng, Gong-Ping; Li, Pin; Li, Ting; Xue, Ya-Jie

2018-02-01

Motivated by the recent experiments realized in a flat-bottomed optical trap (Navon et al., 2015; Chomaz et al., 2015), we study the ground state of polar-core spin vortex of quasi-2D ferromagnetic spin-1 condensate in a finite-size homogeneous trap with a weak magnetic field. The exact spatial distribution of local spin is obtained with a variational method. Unlike the fully-magnetized planar spin texture with a zero-spin core, which was schematically demonstrated in previous studies for the ideal polar-core spin vortex in a homogeneous trap with infinitely large boundary, some plateaus and two-cores structure emerge in the distribution curves of spin magnitude in the polar-core spin vortex we obtained for the larger effective spin-dependent interaction. More importantly, the spin values of the plateaus are not 1 as expected in the fully-magnetized spin texture, except for the sufficiently large spin-dependent interaction and the weak-magnetic-field limit. We attribute the decrease of spin value to the effect of finite size of the system. The spin values of the plateaus can be controlled by the quadratic Zeeman energy q of the weak magnetic field, which decreases with the increase of q.

Emergent spin electromagnetism induced by magnetization textures in the presence of spin-orbit interaction (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tatara, Gen, E-mail: gen.tatara@riken.jp; Nakabayashi, Noriyuki; Graduate School of Science and Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 Japan

2014-05-07

Emergent electromagnetic field which couples to electron's spin in ferromagnetic metals is theoretically studied. Rashba spin-orbit interaction induces spin electromagnetic field which is in the linear order in gradient of magnetization texture. The Rashba-induced effective electric and magnetic fields satisfy in the absence of spin relaxation the Maxwell's equations as in the charge-based electromagnetism. When spin relaxation is taken into account besides spin dynamics, a monopole current emerges generating spin motive force via the Faraday's induction law. The monopole is expected to play an important role in spin-charge conversion and in the integration of spintronics into electronics.

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

NASA Astrophysics Data System (ADS)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Kewisch, J.; Huang, H.

At RHIC, the spin polarization is preserved with a pair of Siberian snakes on the oppo- site sides in each ring. The polarized proton beam with finite spin tune spread might cross spin resonances multiple times in two cases, one is when beam going through strong spin intrinsic resonances during acceleration, the other is when sweeping spin flipper’ frequency across the spin tune to flip the direction of spin polarization. The consequence is loss of spin polarization in both cases. Therefore, a scheme of min- imizing the spin tune spread by matching the dispersion primes at the two snakes wasmore » introduced based on the fact that the spin tune spread is proportional to the difference of dispersion primes at the two snakes. The scheme was implemented at fixed energies for the spin flipper study and during beam acceleration for better spin polarization transmission efficiency. The effect of minimizing the spin tune spread by matching the dispersion primes was observed and confirmed experimentally. The principle of minimizing the spin tune spread by matching the dispersion primes, the impact on the beam optics, and the effect of a narrower spin tune spread are presented in this report.« less

Entangled spins and ghost-spins

NASA Astrophysics Data System (ADS)

Jatkar, Dileep P.; Narayan, K.

2017-09-01

We study patterns of quantum entanglement in systems of spins and ghost-spins regarding them as simple quantum mechanical toy models for theories containing negative norm states. We define a single ghost-spin as in [20] as a 2-state spin variable with an indefinite inner product in the state space. We find that whenever the spin sector is disentangled from the ghost-spin sector (both of which could be entangled within themselves), the reduced density matrix obtained by tracing over all the ghost-spins gives rise to positive entanglement entropy for positive norm states, while negative norm states have an entanglement entropy with a negative real part and a constant imaginary part. However when the spins are entangled with the ghost-spins, there are new entanglement patterns in general. For systems where the number of ghost-spins is even, it is possible to find subsectors of the Hilbert space where positive norm states always lead to positive entanglement entropy after tracing over the ghost-spins. With an odd number of ghost-spins however, we find that there always exist positive norm states with negative real part for entanglement entropy after tracing over the ghost-spins.

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

NASA Astrophysics Data System (ADS)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Spin-bowling in cricket re-visited: model trajectories for various spin-vector angles

NASA Astrophysics Data System (ADS)

Robinson, Garry; Robinson, Ian

2016-08-01

In this paper we investigate, via the calculation of model trajectories appropriate to slow bowling in cricket, the effects on the flight path of the ball before pitching due to changes in the angle of the spin-vector. This was accomplished by allowing the spin-vector to vary in three ways. Firstly, from off-spin, where the spin-vector points horizontally and directly down the pitch, to top-spin where it points horizontally towards the off-side of the pitch. Secondly, from off-spin to side-spin where, for side-spin, the spin-vector points vertically upwards. Thirdly, where the spin-vector points horizontally and at 45° to the pitch (in the general direction of ‘point’, as viewed by the bowler), and is varied towards the vertical, while maintaining the 45° angle in the horizontal plane. It is found that, as is well known, top-spin causes the ball to dip in flight, side-spin causes the ball to move side-ways in flight and, perhaps most importantly, off-spin can cause the ball to drift to the off-side of the pitch late in its flight as it begins to fall. At a more subtle level it is found that, if the total spin is kept constant and a small amount of top-spin is added to the ball at the expense of some off-spin, there is little change in the side-ways drift. However, a considerable reduction in the length at which the ball pitches occurs, ˜25 cm, an amount that batsmen can ignore at their peril. On the other hand, a small amount of side-spin introduced to a top-spin delivery does not alter the point of pitching significantly, but produces a considerable amount of side-ways drift, ˜10 cm or more. For pure side-spin the side-ways drift is up to ˜30 cm. When a side-spin component is added to the spin of a ball bowled with a mixture of off-spin and top-spin in equal proportions, significant movement occurs in both the side-ways direction and in the point of pitching, of the order of a few tens of centimetres.

Engineering the Eigenstates of Coupled Spin-1/2 Atoms on a Surface.

PubMed

Yang, Kai; Bae, Yujeong; Paul, William; Natterer, Fabian D; Willke, Philip; Lado, Jose L; Ferrón, Alejandro; Choi, Taeyoung; Fernández-Rossier, Joaquín; Heinrich, Andreas J; Lutz, Christopher P

2017-12-01

Quantum spin networks having engineered geometries and interactions are eagerly pursued for quantum simulation and access to emergent quantum phenomena such as spin liquids. Spin-1/2 centers are particularly desirable, because they readily manifest coherent quantum fluctuations. Here we introduce a controllable spin-1/2 architecture consisting of titanium atoms on a magnesium oxide surface. We tailor the spin interactions by atomic-precision positioning using a scanning tunneling microscope (STM) and subsequently perform electron spin resonance on individual atoms to drive transitions into and out of quantum eigenstates of the coupled-spin system. Interactions between the atoms are mapped over a range of distances extending from highly anisotropic dipole coupling to strong exchange coupling. The local magnetic field of the magnetic STM tip serves to precisely tune the superposition states of a pair of spins. The precise control of the spin-spin interactions and ability to probe the states of the coupled-spin network by addressing individual spins will enable the exploration of quantum many-body systems based on networks of spin-1/2 atoms on surfaces.

Effects of symmetry and spin configuration on spin-dependent transport properties of iron-phthalocyanine-based devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Li-Ling; School of Science, Hunan University of Technology, Zhuzhou 412007; Yang, Bing-Chu, E-mail: bingchuyang@csu.edu.cn

2014-07-21

Spin-dependent transport properties of nanodevices constructed by iron-phthalocyanine (FePc) molecule sandwiched between two zigzag graphene nanoribbon electrodes are studied using first-principles quantum transport calculations. The effects of the symmetry and spin configuration of electrodes have been taken into account. It is found that large magnetoresistance, large spin polarization, dual spin-filtering, and negative differential resistance (NDR) can coexist in these devices. Our results show that 5Z-FePc system presents well conductive ability in both parallel (P) and anti-parallel (AP) configurations. For 6Z-FePc-P system, spin filtering effect and large spin polarization can be found. A dual spin filtering and NDR can also bemore » shown in 6Z-FePc-AP. Our studies indicate that the dual spin filtering effect depends on the orbitals symmetry of the energy bands and spin mismatching of the electrodes. And all the effects would open up possibilities for their applications in spin-valve, spin-filter as well as effective spin diode devices.« less

Engineering the Eigenstates of Coupled Spin-1 /2 Atoms on a Surface

NASA Astrophysics Data System (ADS)

Yang, Kai; Bae, Yujeong; Paul, William; Natterer, Fabian D.; Willke, Philip; Lado, Jose L.; Ferrón, Alejandro; Choi, Taeyoung; Fernández-Rossier, Joaquín; Heinrich, Andreas J.; Lutz, Christopher P.

2017-12-01

Quantum spin networks having engineered geometries and interactions are eagerly pursued for quantum simulation and access to emergent quantum phenomena such as spin liquids. Spin-1 /2 centers are particularly desirable, because they readily manifest coherent quantum fluctuations. Here we introduce a controllable spin-1 /2 architecture consisting of titanium atoms on a magnesium oxide surface. We tailor the spin interactions by atomic-precision positioning using a scanning tunneling microscope (STM) and subsequently perform electron spin resonance on individual atoms to drive transitions into and out of quantum eigenstates of the coupled-spin system. Interactions between the atoms are mapped over a range of distances extending from highly anisotropic dipole coupling to strong exchange coupling. The local magnetic field of the magnetic STM tip serves to precisely tune the superposition states of a pair of spins. The precise control of the spin-spin interactions and ability to probe the states of the coupled-spin network by addressing individual spins will enable the exploration of quantum many-body systems based on networks of spin-1 /2 atoms on surfaces.

Peculiarities of magnetic and spin effects in a biradical/stable radical complex (three-spin system). Theory and comparison with experiment.

PubMed

Magin, Ilya M; Purtov, Petr A; Kruppa, Alexander I; Leshina, Tatiana V

2005-08-25

The field dependencies of biradical recombination probability in the presence of paramagnetic species with spins S(3) = 1 and S(3) = (1)/(2) have been calculated in the framework of the density matrix formalism. To describe the effect of the "third" spin on the spin evolution in biradical, we have also considered the spin exchange interaction between the added spin and one of the paramagnetic biradical centers. A characteristic feature of the calculated field dependencies is the existence of several extrema with positions and magnitudes depending on the signs and values of the exchange integrals in the system. The method proposed can be used to describe the effect of spin catalysis. It is shown that for the system with the third spin S(3) = 1 spin catalysis manifests itself stronger than in the case of spin S(3) = (1)/(2). The dependence of spin catalysis efficiency on the exchange interaction with the third spin has an extremum with position independent of the value of the spin added.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

PubMed

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Spin-orbit assisted transmission at 3d/5d metallic interfaces

NASA Astrophysics Data System (ADS)

Jaffres, Henri; Barbedienne, Quentin; Jouy, Augustin; Reyren, Nicolas; George, Jean-Marie; Laboratoire de Physique Et Des Plasmas, Ecole Polytechnique, Palaiseau, France Team; Unite Mixte de Physique Cnrs-Thales, Palaiseau, France Team

We will describe the anatomy of spin-transport and spin-orbit torques (SOT) at spin-orbit active interfaces involving 5d transition metals (TM) as heavy metals spin-Hall effect (SHE) materials and 3d TM in [Co,Ni]/Pt, NiFe. NiFe/Au:W and Co/Pt/Au;W systems. In the case of Pt, recent studies have put forward the major role played by the spin-memory loss (SML), the electronic transparency at 3d/5d interfaces and the inhomogeneity of the conductivity in the CIP-geometry. Ingredients to consider for spin-transport and spin-Hall Magnetoresistance (SMR) are the conductivity, the spin-current profiles across the multilayers and the spin-transmission. We will present SMR measurements observed on these systems possibly involving interfacial Anisotropy of Magnetoresistance (AIMR) contributions. We analyze in large details our SMR signals in the series of samples owing: i) the exact conductivity profile across the multilayers via the Camley-Barnas approach and the spin current profile generated by SHE. We will discuss the role of the generalized spin-mixing conductance on the spin-transport properties and spin-orbit torques.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schäfer, Gerhard

The current knowledge in the post-Newtonian (PN) dynamics and motion of non-spinning and spinning compact binaries will be presented based on the Arnowitt-Deser-Misner Hamiltonian approach to general relativity. The presentation will cover the binary dynamics with non-spinning components up to the 4PN order and for spinning binaries up to the next-to-next-to-leading order in the spin-orbit and spin-spin couplings. Radiation reaction will be treated for both non-spinning and spinning binaries. Explicit analytic expressions for the motion will be given, innermost stable circular orbits will be discussed.

Excitations in a spin-polarized two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Kreil, Dominik; Hobbiger, Raphael; Drachta, Jürgen T.; Böhm, Helga M.

2015-11-01

A remarkably long-lived spin plasmon may exist in two-dimensional electron liquids with imbalanced spin-up and spin-down population. The predictions for this interesting mode by Agarwal et al. [Phys. Rev. B 90, 155409 (2014), 10.1103/PhysRevB.90.155409] are based on the random phase approximation. Here, we show how to account for spin-dependent correlations from known ground-state pair correlation functions and study the consequences on the various spin-dependent longitudinal response functions. The spin-plasmon dispersion relation and its critical wave vector for Landau damping by minority spins turn out to be significantly lower. We further demonstrate that spin-dependent effective interactions imply a rich structure in the excitation spectrum of the partially spin-polarized system. Most notably, we find a "magnetic antiresonance," where the imaginary part of both, the spin-spin as well as the density-spin response function vanish. The resulting minimum in the double-differential cross section is awaiting experimental confirmation.

Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond

NASA Astrophysics Data System (ADS)

Epstein, R. J.; Mendoza, F. M.; Kato, Y. K.; Awschalom, D. D.

2005-11-01

Experiments on single nitrogen-vacancy (N-V) centres in diamond, which include electron spin resonance, Rabi oscillations, single-shot spin readout and two-qubit operations with a nearby13C nuclear spin, show the potential of this spin system for solid-state quantum information processing. Moreover, N-V centre ensembles can have spin-coherence times exceeding 50 μs at room temperature. We have developed an angle-resolved magneto-photoluminescence microscope apparatus to investigate the anisotropic electron-spin interactions of single N-V centres at room temperature. We observe negative peaks in the photoluminescence as a function of both magnetic-field magnitude and angle that are explained by coherent spin precession and anisotropic relaxation at spin-level anti-crossings. In addition, precise field alignment unmasks the resonant coupling to neighbouring `dark' nitrogen spins, otherwise undetected by photoluminescence. These results demonstrate the capability of our spectroscopic technique for measuring small numbers of dark spins by means of a single bright spin under ambient conditions.

Wurtzite spin lasers

NASA Astrophysics Data System (ADS)

Faria Junior, Paulo E.; Xu, Gaofeng; Chen, Yang-Fang; Sipahi, Guilherme M.; Žutić, Igor

2017-03-01

Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room-temperature electrical manipulation was first demonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic dependence on electron-spin polarization, even for a nonvanishing hole spin polarization.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE PAGES

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide; ...

2017-11-16

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

The classical and quantum dynamics of molecular spins on graphene

PubMed Central

Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

2015-01-01

Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic1 and quantum computing2 devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics3,4, and electrical spin-manipulation4-11. However, the influence of the graphene environment on the spin systems has yet to be unraveled12. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets13 on graphene. While the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly-developed model. Coupling to Dirac electrons introduces a dominant quantum-relaxation channel that, by driving the spins over Villain’s threshold, gives rise to fully-coherent, resonant spin tunneling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin-manipulation in graphene nanodevices. PMID:26641019

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noiri, A.; Yoneda, J.; Nakajima, T.

2016-04-11

Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantummore » dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.« less

Quenching of dynamic nuclear polarization by spin-orbit coupling in GaAs quantum dots.

PubMed

Nichol, John M; Harvey, Shannon P; Shulman, Michael D; Pal, Arijeet; Umansky, Vladimir; Rashba, Emmanuel I; Halperin, Bertrand I; Yacoby, Amir

2015-07-17

The central-spin problem is a widely studied model of quantum decoherence. Dynamic nuclear polarization occurs in central-spin systems when electronic angular momentum is transferred to nuclear spins and is exploited in quantum information processing for coherent spin manipulation. However, the mechanisms limiting this process remain only partially understood. Here we show that spin-orbit coupling can quench dynamic nuclear polarization in a GaAs quantum dot, because spin conservation is violated in the electron-nuclear system, despite weak spin-orbit coupling in GaAs. Using Landau-Zener sweeps to measure static and dynamic properties of the electron spin-flip probability, we observe that the size of the spin-orbit and hyperfine interactions depends on the magnitude and direction of applied magnetic field. We find that dynamic nuclear polarization is quenched when the spin-orbit contribution exceeds the hyperfine, in agreement with a theoretical model. Our results shed light on the surprisingly strong effect of spin-orbit coupling in central-spin systems.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

NASA Astrophysics Data System (ADS)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Strongly anisotropic spin relaxation in graphene-transition metal dichalcogenide heterostructures at room temperature

NASA Astrophysics Data System (ADS)

Benítez, L. Antonio; Sierra, Juan F.; Savero Torres, Williams; Arrighi, Aloïs; Bonell, Frédéric; Costache, Marius V.; Valenzuela, Sergio O.

2018-03-01

A large enhancement in the spin-orbit coupling of graphene has been predicted when interfacing it with semiconducting transition metal dichalcogenides. Signatures of such an enhancement have been reported, but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and tungsten or molybdenum disulphide (WS2, MoS2). We observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, being largest when the spins point out of the graphene plane. This indicates that the strong spin-valley coupling in the transition metal dichalcogenide is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials.

Spin polarization transfer by the radical pair mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarea, Mehdi, E-mail: m-zarea@northwestern.edu; Ratner, Mark A.; Wasielewski, Michael R.

2015-08-07

In a three-site representation, we study a spin polarization transfer from radical pair spins to a nearby electron or nuclear spin. The quantum dynamics of the radical pair spins is governed by a constant exchange interaction between the radical pair spins which have different Zeeman frequencies. Radical pair spins can recombine to the singlet ground state or to lower energy triplet states. It is then shown that the coherent dynamics of the radical pair induces spin polarization on the nearby third spin in the presence of a magnetic field. The spin polarization transfer depends on the difference between Zeeman frequencies,more » the singlet and triplet recombination rates, and on the exchange and dipole-dipole interactions between the different spins. In particular, the sign of the polarization depends on the exchange coupling between radical pair spins and also on the difference between singlet and triplet recombination rate constants.« less

FMR-driven spin pumping in Y3Fe5O12-based structures

NASA Astrophysics Data System (ADS)

Yang, Fengyuan; Hammel, P. Chris

2018-06-01

Ferromagnetic resonance driven spin pumping, a topic of steadily increasing interest since its emergence over two decades ago, remains one of the most exciting research fields in condensed matter physics. Among the many materials that have been explored for spin pumping, yttrium iron garnet (YIG) is one of the most extensively studied because of its exceptionally low magnetic damping and insulating nature. There is a great amount of literature in the spin pumping and related research fields, too broad for this review to cover. In this Topical Review, we focus on the YIG-based spin pumping results carried out by our groups, including: the mechanism and technical details of our off-axis sputtering technique for the growth of single-crystalline YIG epitaxial films with a high degree ordering, experimental evidence for the high quality of the YIG films, spin pumping results from YIG into various transition metals and their heterostructures, dynamic spin transport in YIG/antiferromagnet hybrid structures, intralayer spin pumping by localized spin wave modes confined by a micromagnetic probe, dynamic spin coupling between YIG and nitrogen-vacancy centers in diamond, parametric spin pumping from high-wavevector spin waves in YIG, and localized spin wave mode behavior in broadly tunable spatially complex magnetic configurations. These results build on the power and versatility of YIG spin pumping to improve our understanding of spin dynamics, spin currents, spin Hall physics, spin–orbit coupling, dynamic magnetic coupling, and the relationship between these phenomena in a broad range of materials, geometries, and settings.

Quantum logic readout and cooling of a single dark electron spin

NASA Astrophysics Data System (ADS)

Shi, Fazhan; Zhang, Qi; Naydenov, Boris; Jelezko, Fedor; Du, Jiangfeng; Reinhard, Friedemann; Wrachtrup, Jörg

2013-05-01

We study a single dark N2 electron spin defect in diamond, which is magnetically coupled to a nearby nitrogen-vacancy (NV) center. We perform pulsed electron spin resonance on this single spin by mapping its state to the NV center spin and optically reading out the latter. Moreover, we show that the NV center's spin polarization can be transferred to the electron spin by combined two decoupling control-NOT gates. These two results allow us to extend the NV center's two key properties—optical spin polarization and detection—to any electron spin in its vicinity. This enables dark electron spins to be used as local quantum registers and engineerable memories.

Spin-electron acoustic soliton and exchange interaction in separate spin evolution quantum plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreev, Pavel A., E-mail: andreevpa@physics.msu.ru

Separate spin evolution quantum hydrodynamics is generalized to include the Coulomb exchange interaction, which is considered as interaction between the spin-down electrons being in quantum states occupied by one electron. The generalized model is applied to study the non-linear spin-electron acoustic waves. Existence of the spin-electron acoustic soliton is demonstrated. Contributions of concentration, spin polarization, and exchange interaction to the properties of the spin electron acoustic soliton are studied.

Magnetic Properties of Restacked 2D Spin 1/2 honeycomb RuCl3 Nanosheets.

PubMed

Weber, Daniel; Schoop, Leslie M; Duppel, Viola; Lippmann, Judith M; Nuss, Jürgen; Lotsch, Bettina V

2016-06-08

Spin 1/2 honeycomb materials have gained substantial interest due to their exotic magnetism and possible application in quantum computing. However, in all current materials out-of-plane interactions are interfering with the in-plane order, hence a true 2D magnetic honeycomb system is still in demand. Here, we report the exfoliation of the magnetic semiconductor α-RuCl3 into the first halide monolayers and the magnetic characterization of the spin 1/2 honeycomb arrangement of turbostratically stacked RuCl3 monolayers. The exfoliation is based on a reductive lithiation/hydration approach, which gives rise to a loss of cooperative magnetism due to the disruption of the spin 1/2 state by electron injection into the layers. The restacked, macroscopic pellets of RuCl3 layers lack symmetry along the stacking direction. After an oxidative treatment, cooperative magnetism similar to the bulk is restored. The oxidized pellets of restacked single layers feature a magnetic transition at TN = 7 K if the field is aligned parallel to the ab-plane, while the magnetic properties differ from bulk α-RuCl3 if the field is aligned perpendicular to the ab-plane. The deliberate introduction of turbostratic disorder to manipulate the magnetic properties of RuCl3 is of interest for research in frustrated magnetism and complex magnetic order as predicted by the Kitaev-Heisenberg model.

Fast radio bursts as giant pulses from young rapidly rotating pulsars

NASA Astrophysics Data System (ADS)

Lyutikov, Maxim; Burzawa, Lukasz; Popov, Sergei B.

2016-10-01

We discuss possible association of fast radio bursts (FRBs) with supergiant pulses emitted by young pulsars (ages ˜ tens to hundreds of years) born with regular magnetic field but very short - few milliseconds - spin periods. We assume that FRBs are extra-Galactic events coming from distances d ≲ 100 Mpc and that most of the dispersion measure (DM) comes from the material in the freshly ejected SNR shell. We then predict that for a given burst the DM should decrease with time and that FRBs are not expected to be seen below ˜300 MHz due to free-free absorption in the expanding ejecta. A supernova might have been detected years before the burst; FRBs are mostly associated with star-forming galaxies. The model requires that some pulsars are born with very fast spins, of the order of few milliseconds. The observed distribution of spin-down powers dot{E} in young energetic pulsars is consistent with equal birth rate per decade of dot{E}. Accepting this injection distribution and scaling the intrinsic brightness of FRBs with dot{E}, we predict the following properties of a large sample of FRBs: (I) the brightest observed events come from a broad distribution in distances; (II) for repeating bursts brightness either remains nearly constant (if the spin-down time is longer than the age of the pulsar) or decreases with time otherwise; in the latter case DM ∝ dot{E}.

A spin exchange model for singlet fission

NASA Astrophysics Data System (ADS)

Yago, Tomoaki; Wakasa, Masanobu

2018-03-01

Singlet fission has been analyzed with the Dexter model in which electron exchange occurs between chromophores, conserving the spin for each electron. In the present study, we propose a spin exchange model for singlet fission. In the spin exchange model, spins are exchanged by the exchange interaction between two electrons. Our analysis with simple spin functions demonstrates that singlet fission is possible by spin exchange. A necessary condition for spin exchange is a variation in exchange interactions. We also adapt the spin exchange model to triplet fusion and triplet energy transfer, which often occur after singlet fission in organic solids.

Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takamura, Yota, E-mail: takamura@spin.pe.titech.ac.jp; Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552; Akushichi, Taiju

2014-05-07

We reexamined curve-fitting analysis for spin-accumulation signals observed in Si-channel spin-accumulation devices, employing widely-used Lorentz functions and a new formula developed from the spin diffusion equation. A Si-channel spin-accumulation device with a high quality ferromagnetic spin injector was fabricated, and its observed spin-accumulation signals were verified. Experimentally obtained Hanle-effect signals for spin accumulation were not able to be fitted by a single Lorentz function and were reproduced by the newly developed formula. Our developed formula can represent spin-accumulation signals and thus analyze Hanle-effect signals.

Observation of the Spin Nernst Effect in Platinum

NASA Astrophysics Data System (ADS)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Suppression of Pauli Spin Blockade in Few Hole Laterally Gated Double Quantum Dots

NASA Astrophysics Data System (ADS)

Gaudreau, Louis; Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek; Aers, Geof; Zawadzki, Piotr; Sachrajda, Andy; Tracy, Lisa; Reno, John; Hargett, Terry; National Research Council Team; Sandia Labs Team

Hole spins have attracted increasing attention as candidates for qubits in quantum information applications. The p-type character of their wavefunction leads to smaller hyperfine interaction with the nuclei resulting in longer coherence times. Additionally, strong spin-orbit interaction allows for enhanced all-electrical manipulation of spin qubit states. Single hole spins have been electrically studied in InSb and Si nanowire quantum dots, however, electrostatically confined hole spins in a 2D hole gas have thus far been limited to the many hole regime. In this talk we will present a full description of the two-hole spin spectrum in a lateral GaAs/AlGaAs double quantum. High-bias magneto-transport spectroscopy reveals all four states of the spectrum (singlet and triplets) in both the (1,1) and (2,0) configurations, essential for spin readout based on Pauli spin blockade. We show that spin-flip tunneling between dots is as strong as spin conserving tunneling, a consequence of the strong spin-orbit interaction. This suppresses the Pauli spin blockade. Our results suggest that alternate techniques for single hole spin qubit readout need to be explored.

SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

NASA Astrophysics Data System (ADS)

Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

2018-05-01

We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

2018-03-01

Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

Nonreciprocal Transverse Photonic Spin and Magnetization-Induced Electromagnetic Spin-Orbit Coupling

PubMed Central

Levy, Miguel; Karki, Dolendra

2017-01-01

We present a formulation of electromagnetic spin-orbit coupling in magneto-optic media, and propose an alternative source of spin-orbit coupling to non-paraxial optics vortices. Our treatment puts forth a formulation of nonreciprocal transverse-spin angular-momentum-density shifts for evanescent waves in magneto-optic waveguide media. It shows that magnetization-induced electromagnetic spin-orbit coupling is possible, and that it leads to unequal spin to orbital angular momentum conversion in magneto-optic media evanescent waves in opposite propagation-directions. Generation of free-space helicoidal beams based on this conversion is shown to be spin-helicity- and magnetization-dependent. We show that transverse-spin to orbital angular momentum coupling into magneto-optic waveguide media engenders spin-helicity-dependent unidirectional propagation. This unidirectional effect produces different orbital angular momenta in opposite directions upon excitation-spin-helicity reversals. PMID:28059120

A BROADBAND EMISSION MODEL OF MAGNETAR WIND NEBULAE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Shuta J.

2016-08-20

Angular momentum loss by the plasma wind is considered as a universal feature of isolated neutron stars including magnetars. The wind nebulae that are powered by magnetars allow us to compare the wind properties and the spin evolution of magnetars with those of rotation-powered pulsars (RPPs). In this paper, we construct a broadband emission model of magnetar wind nebulae (MWNe). This model is similar to past studies of young pulsar wind nebulae (PWNe) around RPPs, but is modified for the application to MWNe that have far less observational information than the young PWNe. We apply the model to the MWNmore » around the youngest (∼1 kyr) magnetar, 1E 1547.0-5408, which has the largest spin-down power L {sub spin} among all the magnetars. However, the MWN is faint because of the low L {sub spin} of 1E 1547.0-5408 when compared to the young RPPs. Since most parameters are not well constrained by only an X-ray flux upper limit of the MWN, we adopt the model’s parameters from the young PWN Kes 75 around PSR J1846-0258, which is a peculiar RPP showing magnetar-like behaviors. The model predicts that γ -ray flux will be detected in a future TeV γ -ray observation by CTA (Cherenkov Telescope Array). The MWN spectrum does not allow us to test the hypothesis that 1E 1547.0-5408 had a period of milliseconds at its birth because the particles injected during the early phase of evolution suffered from severe adiabatic and synchrotron losses. Furthermore, both observational and theoretical studies of the wind nebulae around magnetars are required to constrain the wind and the spin-down properties of magnetars.« less

A Broadband Emission Model of Magnetar Wind Nebulae

NASA Astrophysics Data System (ADS)

Tanaka, Shuta J.

2016-08-01

Angular momentum loss by the plasma wind is considered as a universal feature of isolated neutron stars including magnetars. The wind nebulae that are powered by magnetars allow us to compare the wind properties and the spin evolution of magnetars with those of rotation-powered pulsars (RPPs). In this paper, we construct a broadband emission model of magnetar wind nebulae (MWNe). This model is similar to past studies of young pulsar wind nebulae (PWNe) around RPPs, but is modified for the application to MWNe that have far less observational information than the young PWNe. We apply the model to the MWN around the youngest (˜1 kyr) magnetar, 1E 1547.0-5408, which has the largest spin-down power L spin among all the magnetars. However, the MWN is faint because of the low L spin of 1E 1547.0-5408 when compared to the young RPPs. Since most parameters are not well constrained by only an X-ray flux upper limit of the MWN, we adopt the model’s parameters from the young PWN Kes 75 around PSR J1846-0258, which is a peculiar RPP showing magnetar-like behaviors. The model predicts that γ-ray flux will be detected in a future TeV γ-ray observation by CTA (Cherenkov Telescope Array). The MWN spectrum does not allow us to test the hypothesis that 1E 1547.0-5408 had a period of milliseconds at its birth because the particles injected during the early phase of evolution suffered from severe adiabatic and synchrotron losses. Furthermore, both observational and theoretical studies of the wind nebulae around magnetars are required to constrain the wind and the spin-down properties of magnetars.

Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

PubMed

Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

2016-09-14

Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (<200 K), and the low spin-injection efficiencies of existing III-V, II-VI, and transparent conductive oxide semiconductors in a multilayer device structure, which are caused by precipitation and migration of dopants from the host layer to the adjacent layers. Here, we use catalyst-assisted pulsed laser deposition to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g). The observed magnetization is significantly greater than both doped and defect-rich transparent conductive oxide nanomaterials reported to date. We also provide the first experimental evidence that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures. To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothesize a new defect-induced bound polaron model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials.

New pathways towards efficient metallic spin Hall spintronics

DOE PAGES

Jungfleisch, Matthias Benjamin; Zhang, Wei; Jiang, Wanjun; ...

2015-11-16

Spin Hall effects (SHEs) interconvert spin- and charge currents due to spin- orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here, we review recent experimental efforts exploring efficient spin Hall detector materials as well as new approaches to drive collective magnetization dynamics and to manipulate spin textures by SHEs. As a result, these studies are also expected to impact practical spintronics applications beyond their significance in fundamental research.

Half-metallic properties, single-spin negative differential resistance, and large single-spin Seebeck effects induced by chemical doping in zigzag-edged graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xi-Feng; Zhou, Wen-Qian; Hong, Xue-Kun

2015-01-14

Ab initio calculations combining density-functional theory and nonequilibrium Green’s function are performed to investigate the effects of either single B atom or single N atom dopant in zigzag-edged graphene nanoribbons (ZGNRs) with the ferromagnetic state on the spin-dependent transport properties and thermospin performances. A spin-up (spin-down) localized state near the Fermi level can be induced by these dopants, resulting in a half-metallic property with 100% negative (positive) spin polarization at the Fermi level due to the destructive quantum interference effects. In addition, the highly spin-polarized electric current in the low bias-voltage regime and single-spin negative differential resistance in the highmore » bias-voltage regime are also observed in these doped ZGNRs. Moreover, the large spin-up (spin-down) Seebeck coefficient and the very weak spin-down (spin-up) Seebeck effect of the B(N)-doped ZGNRs near the Fermi level are simultaneously achieved, indicating that the spin Seebeck effect is comparable to the corresponding charge Seebeck effect.« less

Spin caloric effects in antiferromagnets assisted by an external spin current

NASA Astrophysics Data System (ADS)

Gomonay, O.; Yamamoto, Kei; Sinova, Jairo

2018-07-01

Searching for novel spin caloric effects in antiferromagnets, we study the properties of thermally activated magnons in the presence of an external spin current and temperature gradient. We predict the spin Peltier effect—generation of a heat flux by spin accumulation—in an antiferromagnetic insulator with cubic or uniaxial magnetic symmetry. This effect is related to the spin-current induced splitting of the relaxation times of the magnons with the opposite spin direction. We show that the Peltier effect can trigger antiferromagnetic domain wall motion with a force whose value grows with the temperature of a sample. At a temperature larger than the energy of the low-frequency magnons, this force is much larger than the force caused by direct spin transfer between the spin current and the domain wall. We also demonstrate that the external spin current can induce the magnon spin Seebeck effect. The corresponding Seebeck coefficient is controlled by the current density. These spin-current assisted caloric effects open new ways for the manipulation of the magnetic states in antiferromagnets.

Spin decoherence of InAs surface electrons by transition metal ions

NASA Astrophysics Data System (ADS)

Zhang, Yao; Soghomonian, V.; Heremans, J. J.

2018-04-01

Spin interactions between a two-dimensional electron system at the InAs surface and transition metal ions, Fe3 +, Co2 +, and Ni2 +, deposited on the InAs surface, are probed by antilocalization measurements. The spin-dependent quantum interference phenomena underlying the quantum transport phenomenon of antilocalization render the technique sensitive to the spin states of the transition metal ions on the surface. The experiments yield data on the magnitude and temperature dependence of the electrons' inelastic scattering rates, spin-orbit scattering rates, and magnetic spin-flip rates as influenced by Fe3 +, Co2 +, and Ni2 +. A high magnetic spin-flip rate is shown to mask the effects of spin-orbit interaction, while the spin-flip rate is shown to scale with the effective magnetic moment of the surface species. The spin-flip rates and their dependence on temperature yield information about the spin states of the transition metal ions at the surface, and in the case of Co2 + suggest either a spin transition or formation of a spin-glass system.

Selective coupling of individual electron and nuclear spins with integrated all-spin coherence protection

NASA Astrophysics Data System (ADS)

Terletska, Hanna; Dobrovitski, Viatcheslav

2015-03-01

The electron spin of the NV center in diamond is a promising platform for spin sensing. Applying the dynamical decoupling, the NV electron spin can be used to detect the individual weakly coupled carbon-13 nuclear spins in diamond and employ them for small-scale quantum information processing. However, the nuclear spins within this approach remain unprotected from decoherence, which ultimately limits the detection and restricts the fidelity of the quantum operation. Here we investigate possible schemes for combining the resonant decoupling on the NV spin with the decoherence protection of the nuclear spins. Considering several schemes based on pulse and continuous-wave decoupling, we study how the joint electron-nuclear spin dynamics is affected. We identify regimes where the all-spin coherence protection improves the detection and manipulation. We also discuss potential applications of the all-spin decoupling for detecting spins outside diamond, with the purpose of implementing the nanoscale NMR. This work was supported by the US Department of Energy Basic Energy Sciences (Contract No. DE-AC02-07CH11358).

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

PubMed

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Luyi

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstrationmore » and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly suppressed by electron-electron interactions, leading to remarkable resistance to diffusive spreading of the drifting pulse of spin polarization. Finally, we show that spin helices continue propagate at the same speed as the Fermi sea even when the electron drift velocity exceeds the Fermi velocity of 107 cm s -1.« less

Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

NASA Astrophysics Data System (ADS)

McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

2010-12-01

Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Electric dipole spin resonance in a quantum spin dimer system driven by magnetoelectric coupling

NASA Astrophysics Data System (ADS)

Kimura, Shojiro; Matsumoto, Masashige; Akaki, Mitsuru; Hagiwara, Masayuki; Kindo, Koichi; Tanaka, Hidekazu

2018-04-01

In this Rapid Communication, we propose a mechanism for electric dipole active spin resonance caused by spin-dependent electric polarization in a quantum spin gapped system. This proposal was successfully confirmed by high-frequency electron spin resonance (ESR) measurements of the quantum spin dimer system KCuCl3. ESR measurements by an illuminating linearly polarized electromagnetic wave reveal that the optical transition between the singlet and triplet states in KCuCl3 is driven by an ac electric field. The selection rule of the observed transition agrees with the calculation by taking into account spin-dependent electric polarization. We suggest that spin-dependent electric polarization is effective in achieving fast control of quantum spins by an ac electric field.

Spin relaxation 1/f noise in graphene

NASA Astrophysics Data System (ADS)

Omar, S.; Guimarães, M. H. D.; Kaverzin, A.; van Wees, B. J.; Vera-Marun, I. J.

2017-02-01

We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, and the noise originated from the spin relaxation processes. The noise magnitude for spin and charge transport differs by three orders of magnitude, implying different scattering mechanisms for the 1/f fluctuations in the charge and spin transport processes. A modulation of the spin-dependent noise magnitude by changing the spin relaxation length and time indicates that the spin-flip processes dominate the spin-dependent noise.

Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladii, O.; Henry, Y.; Bailleul, M.

2016-05-16

We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 10{sup 11} A/m{sup 2} in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

Macrorealism from entropic Leggett-Garg inequalities

NASA Astrophysics Data System (ADS)

Devi, A. R. Usha; Karthik, H. S.; Sudha; Rajagopal, A. K.

2013-05-01

We formulate entropic Leggett-Garg inequalities, which place constraints on the statistical outcomes of temporal correlations of observables. The information theoretic inequalities are satisfied if macrorealism holds. We show that the quantum statistics underlying correlations between time-separated spin component of a quantum rotor mimics that of spin correlations in two spatially separated spin-s particles sharing a state of zero total spin. This brings forth the violation of the entropic Leggett-Garg inequality by a rotating quantum spin-s system in a similar manner as does the entropic Bell inequality [S. L. Braunstein and C. M. Caves, Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.61.662 61, 662 (1988)] by a pair of spin-s particles forming a composite spin singlet state.

Spin-Triplet Pairing Induced by Spin-Singlet Interactions in Noncentrosymmetric Superconductors

NASA Astrophysics Data System (ADS)

Matsuzaki, Tomoaki; Shimahara, Hiroshi

2017-02-01

In noncentrosymmetric superconductors, we examine the effect of the difference between the intraband and interband interactions, which becomes more important when the band splitting increases. We define the difference ΔVμ between their coupling constants, i.e., that between the intraband and interband hopping energies of intraband Cooper pairs. Here, the subscript μ of ΔVμ indicates that the interactions scatter the spin-singlet and spin-triplet pairs when μ = 0 and μ = 1,2,3, respectively. It is shown that the strong antisymmetric spin-orbit interaction reverses the target spin parity of the interaction: it converts the spin-singlet and spin-triplet interactions represented by ΔV0 and ΔVμ>0 into effective spin-triplet and spin-singlet pairing interactions, respectively. Hence, for example, triplet pairing can be induced solely by the singlet interaction ΔV0. We name the pairing symmetry of the system after that of the intraband Cooper pair wave function, but with an odd-parity phase factor excluded. The pairing symmetry must then be even, even for the triplet component, and the following results are obtained. When ΔVμ is small, the spin-triplet p-wave interactions induce spin-triplet s-wave and spin-triplet d-wave pairings in the regions where the repulsive singlet s-wave interaction is weak and strong, respectively. When ΔV0 is large, a repulsive interband spin-singlet interaction can stabilize spin-triplet pairing. When the Rashba interaction is adopted for the spin-orbit interaction, the spin-triplet pairing interactions mediated by transverse magnetic fluctuations do not contribute to triplet pairing.

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

NASA Astrophysics Data System (ADS)

Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst; Mahmoodian, Sahand; Löbl, Matthias Christian; Söllner, Immo; Schott, Rüdiger; Papon, Camille; Pregnolato, Tommaso; Stobbe, Søren; Midolo, Leonardo; Schröder, Tim; Wieck, Andreas Dirk; Ludwig, Arne; Warburton, Richard John; Lodahl, Peter

2018-05-01

The spin of an electron is a promising memory state and qubit. Connecting spin states that are spatially far apart will enable quantum nodes and quantum networks based on the electron spin. Towards this goal, an integrated spin-photon interface would be a major leap forward as it combines the memory capability of a single spin with the efficient transfer of information by photons. Here, we demonstrate such an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared in the ground state with a fidelity of up to 96%. Subsequently, the system is used to implement a single-spin photonic switch, in which the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates, single-photon transistors and the efficient generation of a photonic cluster state.

Higher spin conformal geometry in three dimensions and prepotentials for higher spin gauge fields

NASA Astrophysics Data System (ADS)

Henneaux, Marc; Hörtner, Sergio; Leonard, Amaury

2016-01-01

We study systematically the conformal geometry of higher spin bosonic gauge fields in three spacetime dimensions. We recall the definition of the Cotton tensor for higher spins and establish a number of its properties that turn out to be key in solving in terms of prepotentials the constraint equations of the Hamiltonian (3 + 1) formulation of four-dimensional higher spin gauge fields. The prepotentials are shown to exhibit higher spin conformal symmetry. Just as for spins 1 and 2, they provide a remarkably simple, manifestly duality invariant formulation of the theory. While the higher spin conformal geometry is developed for arbitrary bosonic spin, we explicitly perform the Hamiltonian analysis and derive the solution of the constraints only in the illustrative case of spin 3. In a separate publication, the Hamiltonian analysis in terms of prepotentials is extended to all bosonic higher spins using the conformal tools of this paper, and the same emergence of higher spin conformal symmetry is confirmed.

Moderate MAS enhances local (1)H spin exchange and spin diffusion.

PubMed

Roos, Matthias; Micke, Peter; Saalwächter, Kay; Hempel, Günter

2015-11-01

Proton NMR spin-diffusion experiments are often combined with magic-angle spinning (MAS) to achieve higher spectral resolution of solid samples. Here we show that local proton spin diffusion can indeed become faster at low (<10 kHz) spinning rates as compared to static conditions. Spin diffusion under static conditions can thus be slower than the often referred value of 0.8 nm(2)/ms, which was determined using slow MAS (Clauss et al., 1993). The enhancement of spin diffusion by slow MAS relies on the modulation of the orientation-dependent dipolar couplings during sample rotation and goes along with transient level crossings in combination with dipolar truncation. The experimental finding and its explanation is supported by density matrix simulations, and also emphasizes the sensitivity of spin diffusion to the local coupling topology. The amplification of spin diffusion by slow MAS cannot be explained by any model based on independent spin pairs; at least three spins have to be considered. Copyright © 2015 Elsevier Inc. All rights reserved.

Acceleration of Polarized Protons up to 3.4 GeV/c in the Nuclotron at JINR

NASA Astrophysics Data System (ADS)

Kovalenko, A. D.; Butenko, A. V.; Mikhaylov, V. A.; Kondratenko, M. A.; Kondratenko, A. M.; Filatov, Yu N.

2017-12-01

To preserve proton polarization in the Nuclotron up to 13.5 GeV/c, it is enough to use a partial solenoid snake with maximal field integral of 25 Tm that allows one to eliminate crossings of the most dangerous intrinsic and integer spin resonances. The insertion of weak field integral is sufficient to preserve the proton polarization up to 3.4 GeV/c. This momentum corresponds to the first intrinsic resonance. To preserve polarization during crossings of five integer spin resonances, it is possible to choose crossing rates that correspond to either the fast or the slow resonance crossings. Another possibility is a deliberate increasing of the resonance strength. To eliminate depolarization during protons injection into the Nuclotron, a scheme of matching of the polarization with a vertical direction is presented. During the run in February-March 2017, the three measurements of the proton polarization at kinetic energies of 0.5 GeV, 1 GeV and 2 GeV were made that allow one to obtain the integer spin resonances strengths.

Ballistic Electron Emission Microscopy Studies of Ferromagnet - Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Mather, P. G.; Perrella, A. C.; Yurtsever, A.; Buhrman, R. A.

2004-03-01

Devices that employ spin as well as charge effects have been the subjects of extensive study recently. The magnetic tunneling transistor (1) is one important device that demonstrates an electrical means of injecting spin-polarized electrons into a semiconductor. A Schottky barrier lies at the heart of the device, and a high quality spatially homogenous and uniform barrier formed on GaAs is highly desirable. We have used ballistic electron emission microscopy (BEEM) to study CoFe, Fe and permalloy deposited on a GaAs substrate to give nanometer resolved evaluation of hot electron transport through the films and across the Schottky barrier. All films give a homogenous, uniform barrier as compared with evaporated Au/GaAs and Ag/GaAs interfaces. We will report on BEEM measurements of the hot electron transfer ratio across the Schottky barrier for the different ferromagnetic materials, and on the energy and spin-dependent hot electron attenuation lengths of the CoFe, Fe, and permalloy films. (1) Sebastiaan van Dijken, Xin Jiang, Stuart S. P. Parkin, APL, 80, 3364.

Entanglement distribution in star network based on spin chain in diamond

NASA Astrophysics Data System (ADS)

Zhu, Yuan-Ming; Ma, Lei

2018-06-01

After star network of spins was proposed, generating entanglement directly through spin interactions between distant parties became possible. We propose an architecture which involves coupled spin chains based on nitrogen-vacancy centers and nitrogen defect spins to expand star network. The numerical analysis shows that the maximally achievable entanglement Em exponentially decays with the length of spin chains M and spin noise. The entanglement capability of this configuration under the effect of disorder and spin loss is also studied. Moreover, it is shown that with this kind of architecture, star network of spins is feasible in measurement of magnetic-field gradient.

Thermoelectronic transport through spin-crossover single molecule Fe[(H2Bpz2)2bipy

NASA Astrophysics Data System (ADS)

Liu, N.; Zhu, L.; Yao, K. L.

2018-04-01

By means of density functional theory combined with the method of Keldysh nonequilibrium Green’s function, the thermal transport properties of high- and low-spin states of mononuclear FeII molecules with spin-crossover characteristics are studied. It is found that the high-spin molecular junction has a larger current than the low-spin one, producing thermally-induced switching effect. Furthermore, for high spin state molecule, the spin-up thermo-current is strongly blocked, thus achieving a pure thermo spin current. The enhanced Seebeck coefficient and the figure of merit value of high-spin state indicate that it is an ideal candidate for thermoelectric applications.

Quantum spin circulator in Y junctions of Heisenberg chains

NASA Astrophysics Data System (ADS)

Buccheri, Francesco; Egger, Reinhold; Pereira, Rodrigo G.; Ramos, Flávia B.

2018-06-01

We show that a quantum spin circulator, a nonreciprocal device that routes spin currents without any charge transport, can be achieved in Y junctions of identical spin-1 /2 Heisenberg chains coupled by a chiral three-spin interaction. Using bosonization, boundary conformal field theory, and density matrix renormalization group simulations, we find that a chiral fixed point with maximally asymmetric spin conductance arises at a critical point separating a regime of disconnected chains from a spin-only version of the three-channel Kondo effect. We argue that networks of spin-chain Y junctions provide a controllable approach to construct long-sought chiral spin-liquid phases.

Spin-current emission governed by nonlinear spin dynamics.

PubMed

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Rigorous decoupling between edge states in frustrated spin chains and ladders

NASA Astrophysics Data System (ADS)

Chepiga, Natalia; Mila, Frédéric

2018-05-01

We investigate the occurrence of exact zero modes in one-dimensional quantum magnets of finite length that possess edge states. Building on conclusions first reached in the context of the spin-1/2 X Y chain in a field and then for the spin-1 J1-J2 Heisenberg model, we show that the development of incommensurate correlations in the bulk invariably leads to oscillations in the sign of the coupling between edge states, and hence to exact zero energy modes at the crossing points where the coupling between the edge states rigorously vanishes. This is true regardless of the origin of the frustration (e.g., next-nearest-neighbor coupling or biquadratic coupling for the spin-1 chain), of the value of the bulk spin (we report on spin-1/2, spin-1, and spin-2 examples), and of the value of the edge-state emergent spin (spin-1/2 or spin-1).

Spin-current emission governed by nonlinear spin dynamics

PubMed Central

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-01-01

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators. PMID:26472712

Thermally driven spin-Seebeck transport in chiral dsDNA-based molecular devices

NASA Astrophysics Data System (ADS)

Nian, L. L.; Zhang, Rong; Tang, F. R.; Tang, Jun; Bai, Long

2018-03-01

By employing the nonequilibrium Green's function technique, we study the thermal-induced spin-Seebeck transport through a chiral double-stranded DNA (dsDNA) connected to a normal-metal and a ferromagnetic lead. How the main parameters of the dsDNA-based system influence the spin-Seebeck transport is analyzed at length, and the thermally created charge (spin-related) current displays the rectification effect and the negative differential thermal conductance feature. More importantly, the spin current exhibits the rectification behavior of the spin-Seebeck effect; even the perfect spin-Seebeck effect can be obtained with the null charge current. Thus, the chiral dsDNA-based system can act as a spin(charge)-Seebeck diode, spin(charge)-Seebeck switch, and spin(charge)-Seebeck transistor. Our results provide new ways to design spin caloritronic devices based on dsDNA or other organic molecules.

Spin noise spectroscopy of donor-bound electrons in ZnO

NASA Astrophysics Data System (ADS)

Horn, H.; Balocchi, A.; Marie, X.; Bakin, A.; Waag, A.; Oestreich, M.; Hübner, J.

2013-01-01

We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring 67Zn isotope. We measure a typical spin dephasing time of 23 ns, in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.

Spin-current probe for phase transition in an insulator

DOE PAGES

Qiu, Zhiyong; Li, Jia; Hou, Dazhi; ...

2016-08-30

Spin fluctuation and transition have always been one of the central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron-scattering process, which is represented by dynamical magnetic susceptibility and maximized at phase transitions. Importantly, a neutron carries spin without electric charge, and therefore it can bring spin into a sample without being disturbed by electric energy. However, large facilities such as a nuclear reactor are necessary. Here we present that spin pumping, frequently used in nanoscale spintronic devices, provides a desktop microprobe for spin transition; spin current is amore » flux of spin without an electric charge and its transport reflects spin excitation. Additionally, we demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via frequency-dependent spin-current transmission measurements, which provides a versatile probe for phase transition in an electric manner in minute devices.« less

Efficient micromagnetic modelling of spin-transfer torque and spin-orbit torque

NASA Astrophysics Data System (ADS)

Abert, Claas; Bruckner, Florian; Vogler, Christoph; Suess, Dieter

2018-05-01

While the spin-diffusion model is considered one of the most complete and accurate tools for the description of spin transport and spin torque, its solution in the context of dynamical micromagnetic simulations is numerically expensive. We propose a procedure to retrieve the free parameters of a simple macro-spin like spin-torque model through the spin-diffusion model. In case of spin-transfer torque the simplified model complies with the model of Slonczewski. A similar model can be established for the description of spin-orbit torque. In both cases the spin-diffusion model enables the retrieval of free model parameters from the geometry and the material parameters of the system. Since these parameters usually have to be determined phenomenologically through experiments, the proposed method combines the strength of the diffusion model to resolve material parameters and geometry with the high performance of simple torque models.

Tunable spin splitting and spin lifetime in polar WSTe monolayer

NASA Astrophysics Data System (ADS)

Adhib Ulil Absor, Moh.; Kotaka, Hiroki; Ishii, Fumiyuki; Saito, Mineo

2018-04-01

The established spin splitting with out-of-plane Zeeman spin polarizations in the monolayer (ML) of transition metal dichalcogenides (TMDs) is dictated by inversion symmetry breaking together with mirror symmetry in the surface plane. Here, by density functional theory calculations, we find that mirror symmetry breaking in the polar WSTe ML leads to large spin splitting exhibiting in-plane Rashba spin polarizations. We also find that the interplay between the out-of-plane Zeeman- and in-plane Rashba spin-polarized states sensitively affects the spin lifetime, which can be effectively controlled by in-plane strain. In addition, the tunability of spin splitting using an external electric field is also demonstrated. Our study clarifies that the use of in-plane strain and an external electric field is effective for tuning the spin splitting and spin lifetime of the polar WSTe ML; thus, it is useful for designing spintronic devices.

14 CFR 61.49 - Retesting after failure.

Code of Federal Regulations, 2012 CFR

2012-01-01

... instructor who gave the applicant the additional training. (b) An applicant for a flight instructor... awareness, spin entry, spins, or spin recovery must: (1) Comply with the requirements of paragraph (a) of... instructional proficiency on stall awareness, spin entry, spins, and spin recovery to an examiner during the...

14 CFR 61.49 - Retesting after failure.

Code of Federal Regulations, 2014 CFR

2014-01-01

... instructor who gave the applicant the additional training. (b) An applicant for a flight instructor... awareness, spin entry, spins, or spin recovery must: (1) Comply with the requirements of paragraph (a) of... instructional proficiency on stall awareness, spin entry, spins, and spin recovery to an examiner during the...

14 CFR 61.49 - Retesting after failure.

Code of Federal Regulations, 2013 CFR

2013-01-01

... instructor who gave the applicant the additional training. (b) An applicant for a flight instructor... awareness, spin entry, spins, or spin recovery must: (1) Comply with the requirements of paragraph (a) of... instructional proficiency on stall awareness, spin entry, spins, and spin recovery to an examiner during the...

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

NASA Astrophysics Data System (ADS)

Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

2015-07-01

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.

Spin-dependent delay time in ferromagnet/insulator/ferromagnet heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, ZhengWei; Zheng Shi, De; Lv, HouXiang

2014-07-07

We study theoretically spin-dependent group delay and dwell time in ferromagnet/insulator/ferromagnet (FM/I/FM) heterostructure. The results indicate that, when the electrons with different spin orientations tunnel through the FM/I/FM junction, the spin-up process and the spin-down process are separated on the time scales. As the self-interference delay has the spin-dependent features, the variations of spin-dependent dwell-time and spin-dependent group-delay time with the structure parameters appear different features, especially, in low incident energy range. These different features show up as that the group delay times for the spin-up electrons are always longer than those for spin-down electrons when the barrier height ormore » incident energy increase. In contrast, the dwell times for the spin-up electrons are longer (shorter) than those for spin-down electrons when the barrier heights (the incident energy) are under a certain value. When the barrier heights (the incident energy) exceed a certain value, the dwell times for the spin-up electrons turn out to be shorter (longer) than those for spin-down electrons. In addition, the group delay time and the dwell time for spin-up and down electrons also relies on the comparative direction of magnetization in two FM layers and tends to saturation with the thickness of the barrier.« less

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wójcik, P., E-mail: pawel.wojcik@fis.agh.edu.pl; Adamowski, J., E-mail: janusz.adamowski@fis.agh.edu.pl; Wołoszyn, M.

2015-07-07

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be usedmore » to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.« less

Phase transitions and thermal entanglement of the distorted Ising-Heisenberg spin chain: topology of multiple-spin exchange interactions in spin ladders

NASA Astrophysics Data System (ADS)

Arian Zad, Hamid; Ananikian, Nerses

2017-11-01

We consider a symmetric spin-1/2 Ising-XXZ double sawtooth spin ladder obtained from distorting a spin chain, with the XXZ interaction between the interstitial Heisenberg dimers (which are connected to the spins based on the legs via an Ising-type interaction), the Ising coupling between nearest-neighbor spins of the legs and rungs spins, respectively, and additional cyclic four-spin exchange (ring exchange) in the square plaquette of each block. The presented analysis supplemented by results of the exact solution of the model with infinite periodic boundary implies a rich ground state phase diagram. As well as the quantum phase transitions, the characteristics of some of the thermodynamic parameters such as heat capacity, magnetization and magnetic susceptibility are investigated. We prove here that among the considered thermodynamic and thermal parameters, solely heat capacity is sensitive versus the changes of the cyclic four-spin exchange interaction. By using the heat capacity function, we obtain a singularity relation between the cyclic four-spin exchange interaction and the exchange coupling between pair spins on each rung of the spin ladder. All thermal and thermodynamic quantities under consideration should be investigated by regarding those points which satisfy the singularity relation. The thermal entanglement within the Heisenberg spin dimers is investigated by using the concurrence, which is calculated from a relevant reduced density operator in the thermodynamic limit.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

PubMed Central

2011-01-01

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds. PMID:21711662

Temperature for a dynamic spin ensemble

NASA Astrophysics Data System (ADS)

Ma, Pui-Wai; Dudarev, S. L.; Semenov, A. A.; Woo, C. H.

2010-09-01

In molecular dynamics simulations, temperature is evaluated, via the equipartition principle, by computing the mean kinetic energy of atoms. There is no similar recipe yet for evaluating temperature of a dynamic system of interacting spins. By solving semiclassical Langevin spin-dynamics equations, and applying the fluctuation-dissipation theorem, we derive an equation for the temperature of a spin ensemble, expressed in terms of dynamic spin variables. The fact that definitions for the kinetic and spin temperatures are fully consistent is illustrated using large-scale spin dynamics and spin-lattice dynamics simulations.

Roles of nonlocal conductivity on spin Hall angle measurement

NASA Astrophysics Data System (ADS)

Chen, Kai; Zhang, Shufeng

2017-10-01

Spin Hall angle characterizes the rate of spin-charge current conversion and it has become one of the most important material parameters for spintronics physics and device application. A long-standing controversy is that the spin Hall angles for a given material measured by spin pumping and by spin Hall torque experiments are inconsistent and they could differ by as much as an order of magnitude. By using the linear response spin transport theory, we explicitly formulate the relation between the spin Hall angle and measured variables in different experiments. We find that the nonlocal conductivity inherited in the layered structure plays a key role to resolve conflicting values of the spin Hall angle. We provide a generalized scheme for extracting spin transport coefficients from experimental data.

Electron spin dynamics and optical orientation of Mn2+ ions in GaAs

NASA Astrophysics Data System (ADS)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Sapega, V. F.; Yakovlev, D. R.; Bayer, M.

2013-04-01

We present an overview of spin-related phenomena in GaAs doped with low concentration of Mn-acceptors (below 1018 cm-3). We use the combination of different experimental techniques such as spin-flip Raman scattering and time-resolved photoluminescence. This allows to evaluate the time evolution of both electron and Mn spins. We show that optical orientation of Mn ions is possible under application of weak magnetic field, which is required to suppress the manganese spin relaxation. The optically oriented Mn2+ ions maintain the spin and return part of the polarization back to the electron spin system providing a long-lived electron spin memory. This leads to a bunch of spectacular effects such as non-exponential electron spin decay and spin precession in the effective exchange fields.

Design of spin-Seebeck diode with spin semiconductors.

PubMed

Zhang, Zhao-Qian; Yang, Yu-Rong; Fu, Hua-Hua; Wu, Ruqian

2016-12-16

We report a new design of spin-Seebeck diode using two-dimensional spin semiconductors such as sawtooth-like (ST) silicence nanoribbons (SiNRs), to generate unidirectional spin currents with a temperature gradient. ST SiNRs have subbands with opposite spins across the Fermi level and hence the flow of thermally excited carriers may produce a net spin current but not charge current. Moreover, we found that even-width ST SiNRs display a remarkable negative differential thermoelectric resistance due to a charge-current compensation mechanism. In contrast, odd-width ST SiNRs manifest features of a thermoelectric diode and can be used to produce both charge and spin currents with temperature gradient. These findings can be extended to other spin semiconductors and open the door for designs of new materials and spin caloritronic devices.

Nuclear spin polarized H and D by means of spin-exchange optical pumping

NASA Astrophysics Data System (ADS)

Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

1998-01-01

Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

Quasiparticle spin resonance and coherence in superconducting aluminium

NASA Astrophysics Data System (ADS)

Quay, C. H. L.; Weideneder, M.; Chiffaudel, Y.; Strunk, C.; Aprili, M.

2015-10-01

Conventional superconductors were long thought to be spin inert; however, there is now increasing interest in both (the manipulation of) the internal spin structure of the ground-state condensate, as well as recently observed long-lived, spin-polarized excitations (quasiparticles). We demonstrate spin resonance in the quasiparticle population of a mesoscopic superconductor (aluminium) using novel on-chip microwave detection techniques. The spin decoherence time obtained (~100 ps), and its dependence on the sample thickness are consistent with Elliott-Yafet spin-orbit scattering as the main decoherence mechanism. The striking divergence between the spin coherence time and the previously measured spin imbalance relaxation time (~10 ns) suggests that the latter is limited instead by inelastic processes. This work stakes out new ground for the nascent field of spin-based electronics with superconductors or superconducting spintronics.

Generalized Elliott-Yafet spin-relaxation time for arbitrary spin mixing

NASA Astrophysics Data System (ADS)

Vollmar, Svenja; Hilton, David J.; Schneider, Hans Christian

2017-08-01

We extend our recent result for the spin-relaxation time due to acoustic electron-phonon scattering in degenerate bands with spin mixing [New J. Phys. 18, 023012 (2016), 10.1088/1367-2630/18/2/023012] to include interactions with optical phonons, and present a numerical evaluation of the spin-relaxation time for intraband hole-phonon scattering in the heavy-hole (HH) bands of bulk GaAs. Comparing our computed spin-relaxation times to the conventional Elliott-Yafet result quantitatively demonstrates that the latter underestimates the spin-relaxation time because it does not correctly describe how electron-phonon interactions change the (vector) spin expectation value of the single-particle states. We show that the conventional Elliott-Yafet spin relaxation time is a special case of our result for weak spin mixing.

Spin-resolved inelastic electron scattering by spin waves in noncollinear magnets

NASA Astrophysics Data System (ADS)

dos Santos, Flaviano José; dos Santos Dias, Manuel; Guimarães, Filipe Souza Mendes; Bouaziz, Juba; Lounis, Samir

2018-01-01

Topological noncollinear magnetic phases of matter are at the heart of many proposals for future information nanotechnology, with novel device concepts based on ultrathin films and nanowires. Their operation requires understanding and control of the underlying dynamics, including excitations such as spin waves. So far, no experimental technique has attempted to probe large wave-vector spin waves in noncollinear low-dimensional systems. In this paper, we explain how inelastic electron scattering, being suitable for investigations of surfaces and thin films, can detect the collective spin-excitation spectra of noncollinear magnets. To reveal the particularities of spin waves in such noncollinear samples, we propose the usage of spin-polarized electron-energy-loss spectroscopy augmented with a spin analyzer. With the spin analyzer detecting the polarization of the scattered electrons, four spin-dependent scattering channels are defined, which allow us to filter and select specific spin-wave modes. We take as examples a topological nontrivial skyrmion lattice, a spin-spiral phase, and the conventional ferromagnet. Then we demonstrate that, counterintuitively and in contrast to the ferromagnetic case, even non-spin-flip processes can generate spin waves in noncollinear substrates. The measured dispersion and lifetime of the excitation modes permit us to fingerprint the magnetic nature of the substrate.

Observation of Spin Polarons in a Tunable Fermi Liquid of Ultracold Atoms

NASA Astrophysics Data System (ADS)

Zwierlein, Martin

2009-05-01

We have observed spin polarons, dressed spin down impurities in a spin up Fermi sea of ultracold atoms via tomographic RF spectroscopy. Feshbach resonances allow to freely tune the interactions between the two spin states involved. A single spin down atom immersed in a Fermi sea of spin up atoms can do one of two things: For strong attraction, it can form a molecule with exactly one spin up partner, but for weaker interaction it will spread its attraction and surround itself with a collection of majority atoms. This spin down atom dressed with a spin up cloud constitutes the spin- or Fermi polaron. We have observed a striking spectroscopic signature of this quasi-particle for various interaction strengths, a narrow peak in the spin down spectrum that emerges above a broad background. The spectra allow us to directly measure the polaron energy and the quasi-particle residue Z. The polarons are found to be only weakly interacting with each other, and can thus be identified with the quasi-particles of Landau's Fermi liquid theory. At a critical interaction strength, we observe a transition from spin one-half polarons to spin zero molecules. At this point the Fermi liquid undergoes a phase transition into a superfluid Bose liquid.

Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet.

PubMed

Korkusinski, M; Hawrylak, P; Liu, H W; Hirayama, Y

2017-03-06

The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means.

Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet

PubMed Central

Korkusinski, M.; Hawrylak, P.; Liu, H. W.; Hirayama, Y.

2017-01-01

The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means. PMID:28262758

Non-Markovian spin-resolved counting statistics and an anomalous relation between autocorrelations and cross correlations in a three-terminal quantum dot

NASA Astrophysics Data System (ADS)

Luo, JunYan; Yan, Yiying; Huang, Yixiao; Yu, Li; He, Xiao-Ling; Jiao, HuJun

2017-01-01

We investigate the noise correlations of spin and charge currents through an electron spin resonance (ESR)-pumped quantum dot, which is tunnel coupled to three electrodes maintained at an equivalent chemical potential. A recursive scheme is employed with inclusion of the spin degrees of freedom to account for the spin-resolved counting statistics in the presence of non-Markovian effects due to coupling with a dissipative heat bath. For symmetric spin-up and spin-down tunneling rates, an ESR-induced spin flip mechanism generates a pure spin current without an accompanying net charge current. The stochastic tunneling of spin carriers, however, produces universal shot noises of both charge and spin currents, revealing the effective charge and spin units of quasiparticles in transport. In the case of very asymmetric tunneling rates for opposite spins, an anomalous relationship between noise autocorrelations and cross correlations is revealed, where super-Poissonian autocorrelation is observed in spite of a negative cross correlation. Remarkably, with strong dissipation strength, non-Markovian memory effects give rise to a positive cross correlation of the charge current in the absence of a super-Poissonian autocorrelation. These unique noise features may offer essential methods for exploiting internal spin dynamics and various quasiparticle tunneling processes in mesoscopic transport.

Extrinsic spin Hall effect in graphene

NASA Astrophysics Data System (ADS)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

A new spin on electron liquids: Phenomena in systems with spin-orbit coupling

NASA Astrophysics Data System (ADS)

Bernevig, B. Andrei

Conventional microelectronic devices are based on the ability to store and control the flow of electronic charge. Spin-based electronics promises a radical alternative, offering the possibility of logic operations with much lower power consumption than equivalent charge-based logic operations. Our research suggests that spin transport is fundamentally different from the transport of charge. The generalized Ohm's law that governs the flow of spins indicates that the generation of spin current by an electric field can be reversible and non-dissipative. Spin-orbit coupling and spin currents appear in many other seemingly unrelated areas of physics. Spin currents are as fundamental in theoretical physics as charge currents. In strongly correlated systems such as spin-chains, one can write down the Hamiltonian as a spin-current - spin-current interaction. The research presented here shows that the fractionalized excitations of one-dimensional spin chains are gapless and carry spin current. We present the most interesting example of such a chain, the Haldane-Shastry spin chain, which is exactly solvable in terms of real-space wavefunctions. Spin-orbit coupling can be found in high-energy physics, hidden under a different name: non-trivial fibrations. Particles moving in a space which is non-trivially related to an (iso)spin space acquire a gauge connection (the condensed-matter equivalent of a Berry phase) which can be either abelian or non-abelian. In most cases, the consequences of such gauge connection are far-reaching. We present a problem where particles move on an 8-dimensional manifold and posses an isospin space with is a 7-sphere S 7. The non-trivial isospin space gives the Hamiltonian SO (8) landau-level structure, and the system exhibits a higher-dimensional Quantum Hall Effect.

Probing long-range carrier-pair spin–spin interactions in a conjugated polymer by detuning of electrically detected spin beating

PubMed Central

van Schooten, Kipp J.; Baird, Douglas L.; Limes, Mark E.; Lupton, John M.; Boehme, Christoph

2015-01-01

Weakly coupled electron spin pairs that experience weak spin–orbit interaction can control electronic transitions in molecular and solid-state systems. Known to determine radical pair reactions, they have been invoked to explain phenomena ranging from avian magnetoreception to spin-dependent charge-carrier recombination and transport. Spin pairs exhibit persistent spin coherence, allowing minute magnetic fields to perturb spin precession and thus recombination rates and photoreaction yields, giving rise to a range of magneto-optoelectronic effects in devices. Little is known, however, about interparticle magnetic interactions within such pairs. Here we present pulsed electrically detected electron spin resonance experiments on poly(styrene-sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) devices, which show how interparticle spin–spin interactions (magnetic-dipolar and spin-exchange) between charge-carrier spin pairs can be probed through the detuning of spin-Rabi oscillations. The deviation from uncoupled precession frequencies quantifies both the exchange (<30 neV) and dipolar (23.5±1.5 neV) interaction energies responsible for the pair's zero-field splitting, implying quantum mechanical entanglement of charge-carrier spins over distances of 2.1±0.1 nm. PMID:25868686

Probing long-range carrier-pair spin–spin interactions in a conjugated polymer by detuning of electrically detected spin beating

DOE PAGES

van Schooten, Kipp J.; Baird, Douglas L.; Limes, Mark E.; ...

2015-04-14

Here, weakly coupled electron spin pairs that experience weak spin–orbit interaction can control electronic transitions in molecular and solid-state systems. Known to determine radical pair reactions, they have been invoked to explain phenomena ranging from avian magnetoreception to spin-dependent charge-carrier recombination and transport. Spin pairs exhibit persistent spin coherence, allowing minute magnetic fields to perturb spin precession and thus recombination rates and photoreaction yields, giving rise to a range of magneto-optoelectronic effects in devices. Little is known, however, about interparticle magnetic interactions within such pairs. Here we present pulsed electrically detected electron spin resonance experiments on poly(styrene-sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) devices,more » which show how interparticle spin–spin interactions (magnetic-dipolar and spin-exchange) between charge-carrier spin pairs can be probed through the detuning of spin-Rabi oscillations. The deviation from uncoupled precession frequencies quantifies both the exchange (<30 neV) and dipolar (23.5±1.5 neV) interaction energies responsible for the pair’s zero-field splitting, implying quantum mechanical entanglement of charge-carrier spins over distances of 2.1±0.1 nm.« less

Thermal properties of spin-S Kitaev-Heisenberg model on a honeycomb lattice

NASA Astrophysics Data System (ADS)

Suzuki, Takafumi; Yamaji, Youhei

2018-05-01

Temperature (T) dependence of heat capacity C (T) in the S = 1 / 2 Kitaev honeycomb model shows a double-peak structure resulting from fractionalization of spins into two kinds of Majorana fermions. Recently it has been discussed that the double-peak structure in C (T) is also observed in magnetic ordered phases of the S = 1 / 2 Kitaev-Heisenberg (KH) model on a honeycomb lattice when the system is located in the vicinity of the Kitaev's spin liquid phase. In addition to the S = 1 / 2 spin case, similar double-peak structure has been confirmed in the KH honeycomb model for classical Heisenberg spins, where spin S is regarded as S → ∞ . We investigate spin-S dependence of C (T) for the KH honeycomb models by using thermal pure quantum state. We also perform classical Monte Carlo calculations to obtain C (T) for the classical KH model. From obtained results, we find that the origin of the high-temperature peak is different between the quantum spin case with small Ss and the classical Heisenberg spin case. Furthermore, the high-temperature peak in the quantum spin case, which is one of the clues for fractionalization of spins, disappears for S > 1 .

NICA project at JINR: status and prospects

NASA Astrophysics Data System (ADS)

Kekelidze, V. D.

2017-06-01

The project NICA (Nuclotron-based Ion Collider fAcility) is aimed to study hot and dense baryonic matter in heavy-ion collisions in the energy range up to 11.0 AGeV . The plan of NICA accelerator block development includes an upgrade of the existing superconducting (SC) synchrotron Nuclotron and construction of the new injection complex, SC Booster, and SC Collider with two interaction points (IP). The heavy-ion collision program will be performed with the fixed target experiment Baryonic Matter at Nuclotron (BM@N) at the beam extracted from the Nuclotron, and with Multi-Purpose Detector (MPD) at the first IP of NICA Collider. Investigation of nucleon spin structure and polarization phenomena is foreseen with the Spin Physics Detector (SPC) at the second IP of the Collider.

Spintronic signatures of Klein tunneling in topological insulators

NASA Astrophysics Data System (ADS)

Xie, Yunkun; Tan, Yaohua; Ghosh, Avik W.

2017-11-01

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show an alternative way to directly measure Klein tunneling for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.

Surface hopping trajectory simulations with spin-orbit and dynamical couplings

NASA Astrophysics Data System (ADS)

Granucci, Giovanni; Persico, Maurizio; Spighi, Gloria

2012-12-01

In this paper we consider the inclusion of the spin-orbit interaction in surface hopping molecular dynamics simulations to take into account spin forbidden transitions. Two alternative approaches are examined. The spin-diabatic one makes use of eigenstates of the spin-free electronic Hamiltonian and of hat{S}^2 and is commonly applied when the spin-orbit coupling is weak. We point out some inconsistencies of this approach, especially important when more than two spin multiplets are coupled. The spin-adiabatic approach is based on the eigenstates of the total electronic Hamiltonian including the spin-orbit coupling. Advantages and drawbacks of both strategies are discussed and illustrated with the help of two model systems.

ECN-22193

NASA Image and Video Library

1982-12-22

A close-up photo of the spin chute mounted on the rear fuselage of the AFTI F-16, a safety device designed to prevent the loss of aircraft in spin conditions. Under some circumstances, pilots cannot recover from spins using normal controls. It these instances, the spin chute is deployed, thus "breaking" the spin and enabling the pilot to recover. The spin chute is held in a metal cylinder attached to the AFTI F-16 by four tubes, a structure strong enough to withstand the shock of the spin chute opening. Unlike the air probe in the last photo, spin chutes are not standard equipment on research or prototype aircraft but are commonly attached expressly for actual spin tests.

Complete quantum control of a single quantum dot spin using ultrafast optical pulses.

PubMed

Press, David; Ladd, Thaddeus D; Zhang, Bingyang; Yamamoto, Yoshihisa

2008-11-13

A basic requirement for quantum information processing systems is the ability to completely control the state of a single qubit. For qubits based on electron spin, a universal single-qubit gate is realized by a rotation of the spin by any angle about an arbitrary axis. Driven, coherent Rabi oscillations between two spin states can be used to demonstrate control of the rotation angle. Ramsey interference, produced by two coherent spin rotations separated by a variable time delay, demonstrates control over the axis of rotation. Full quantum control of an electron spin in a quantum dot has previously been demonstrated using resonant radio-frequency pulses that require many spin precession periods. However, optical manipulation of the spin allows quantum control on a picosecond or femtosecond timescale, permitting an arbitrary rotation to be completed within one spin precession period. Recent work in optical single-spin control has demonstrated the initialization of a spin state in a quantum dot, as well as the ultrafast manipulation of coherence in a largely unpolarized single-spin state. Here we demonstrate complete coherent control over an initialized electron spin state in a quantum dot using picosecond optical pulses. First we vary the intensity of a single optical pulse to observe over six Rabi oscillations between the two spin states; then we apply two sequential pulses to observe high-contrast Ramsey interference. Such a two-pulse sequence realizes an arbitrary single-qubit gate completed on a picosecond timescale. Along with the spin initialization and final projective measurement of the spin state, these results demonstrate a complete set of all-optical single-qubit operations.

Free-Spinning-Tunnel Investigation to Determine the Effect of Spin-Recovery Rockets and Thrust Simulation on the Recovery Characteristics of a 1/21-Scale Model of the Chance Vought F7U-3 Airplane, TED No. NACA AD 3103

NASA Technical Reports Server (NTRS)

Burk, Sanger H., Jr.; Healy, Frederick M.

1955-01-01

An investigation of a l/21-scale model of the Chance Vought F7U-3 airplane in the co&at-load- condition has been conducted in the Langley 20-foot free-spinning tunnel, The recovery characteristics of the model were determined by use of spin-recovery rockets for the erect and inverted spinning condition. The rockets were so placed as to provide either a yawing or rolling moment about the model center of gravity. Also included in the investigation were tests to determine the effect of simulated engine thrust on the recovery characteristics of the model. On the basis of model tests, recoveries from erect and inverted spins were satisfactory when a yawing moment of 22,200 foot-pounds (full scale) was provided against the spin by rockets attached to the wing tips; the anti-spin yawing moment was applied for approximately 9 seconds, (full scale). Satisfactory recoveries were obtained from erect spins when a rolling moment of 22,200 foot-pounds (full scale) was provided with the spin (rolls right wing down in right spin). Although the inverted spin was satisfactorily terminated when a rolling moment of equal magnitude was provided, a roll rocket was not considered to be an optimum spin-recovery device to effect recoveries from inverted spins for this airplane because of resulting gyrations during spin recovery. Simulation of engine thrust had no apparent effect on the spin recovery characteristics.

Spin noise spectroscopy of ZnO

NASA Astrophysics Data System (ADS)

Horn, H.; Berski, F.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.; Hübner, J.; Oestreich, M.

2013-12-01

We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

The Scattering of Particles with Spin from Targets with Spin

ERIC Educational Resources Information Center

Stewart, Noel M.

1978-01-01

The density matrix is used to obtain an expression for the mean value of any spin operator in the scattering of particles with arbitrary spin. The example of spin-1/2-spin-1 scattering is developed and physical information obtained by establishing connections with the polarization tensor and Wolfenstein observables. (Author/GA)

π Spin Berry Phase in a Quantum-Spin-Hall-Insulator-Based Interferometer: Evidence for the Helical Spin Texture of the Edge States

NASA Astrophysics Data System (ADS)

Chen, Wei; Deng, Wei-Yin; Hou, Jing-Min; Shi, D. N.; Sheng, L.; Xing, D. Y.

2016-08-01

The quantum spin Hall insulator is characterized by helical edge states, with the spin polarization of the electron being locked to its direction of motion. Although the edge-state conduction has been observed, unambiguous evidence of the helical spin texture is still lacking. Here, we investigate the coherent edge-state transport in an interference loop pinched by two point contacts. Because of the helical character, the forward interedge scattering enforces a π spin rotation. Two successive processes can only produce a nontrivial 2 π or trivial 0 spin rotation, which can be controlled by the Rashba spin-orbit coupling. The nontrivial spin rotation results in a geometric π Berry phase, which can be detected by a π phase shift of the conductance oscillation relative to the trivial case. Our results provide smoking gun evidence for the helical spin texture of the edge states. Moreover, it also provides the opportunity to all electrically explore the trajectory-dependent spin Berry phase in condensed matter.

Direct evidence of hidden local spin polarization in a centrosymmetric superconductor LaO0.55 F0.45BiS2.

PubMed

Wu, Shi-Long; Sumida, Kazuki; Miyamoto, Koji; Taguchi, Kazuaki; Yoshikawa, Tomoki; Kimura, Akio; Ueda, Yoshifumi; Arita, Masashi; Nagao, Masanori; Watauchi, Satoshi; Tanaka, Isao; Okuda, Taichi

2017-12-04

Conventional Rashba spin polarization is caused by the combination of strong spin-orbit interaction and spatial inversion asymmetry. However, Rashba-Dresselhaus-type spin-split states are predicted in the centrosymmetric LaOBiS 2 system by recent theory, which stem from the local inversion asymmetry of active BiS 2 layer. By performing high-resolution spin- and angle-resolved photoemission spectroscopy, we have investigated the electronic band structure and spin texture of superconductor LaO 0.55 F 0.45 BiS 2 . Here we present direct spectroscopic evidence for the local spin polarization of both the valence band and the conduction band. In particular, the coexistence of Rashba-like and Dresselhaus-like spin textures has been observed in the conduction band. The finding is of key importance for fabrication of proposed dual-gated spin-field effect transistor. Moreover, the spin-split band leads to a spin-momentum locking Fermi surface from which superconductivity emerges. Our demonstration not only expands the scope of spintronic materials but also enhances the understanding of spin-orbit interaction-related superconductivity.

Orbit-induced localized spin angular momentum in strong focusing of optical vectorial vortex beams

NASA Astrophysics Data System (ADS)

Li, Manman; Cai, Yanan; Yan, Shaohui; Liang, Yansheng; Zhang, Peng; Yao, Baoli

2018-05-01

Light beams may carry optical spin or orbital angular momentum, or both. The spin and orbital parts manifest themselves by the ellipticity of the state of polarization and the vortex structure of phase of light beams, separately. Optical spin and orbit interaction, arising from the interaction between the polarization and the spatial structure of light beams, has attracted enormous interest recently. The optical spin-to-orbital angular momentum conversion under strong focusing is well known, while the converse process, orbital-to-spin conversion, has not been reported so far. In this paper, we predict in theory that the orbital angular momentum can induce a localized spin angular momentum in strong focusing of a spin-free azimuthal polarization vortex beam. This localized longitudinal spin of the focused field can drive the trapped particle to spin around its own axis. This investigation provides a new degree of freedom for spinning particles by using a vortex phase, which may have considerable potentials in optical spin and orbit interaction, light-beam shaping, or optical manipulation.

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, L.; Im, J.; DeGottardi, W.

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Direct detection of spin Nernst effect in platinum

NASA Astrophysics Data System (ADS)

Bose, A.; Bhuktare, S.; Singh, H.; Dutta, S.; Achanta, V. G.; Tulapurkar, A. A.

2018-04-01

Generation of spin current lies at the heart of spintronic research. The spin Hall effect and the spin Seebeck effect have drawn considerable attention in the last few years to create pure spin current by heavy metals and ferromagnets, respectively. In this work, we show the direct evidence of heat current to spin current conversion in non-magnetic Platinum by the spin Nernst effect (SNE) at room temperature. This is the thermal analogue of the spin Hall effect in non-magnets. We have shown that the 8 K/μm thermal gradient in Pt can lead to the generation of pure spin current density of the order of 108 A/m2 by virtue of SNE. This opens up an additional possibility to couple the relativistic spin-orbit interaction with the thermal gradient for spintronic applications.

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE PAGES

Fang, L.; Im, J.; DeGottardi, W.; ...

2016-10-12

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Extraordinary SEAWs under influence of the spin-spin interaction and the quantum Bohm potential

NASA Astrophysics Data System (ADS)

Andreev, Pavel A.

2018-06-01

The separate spin evolution (SSE) of electrons causes the existence of the spin-electron acoustic wave. Extraordinary spin-electron acoustic waves (SEAWs) propagating perpendicular to the external magnetic field have a large contribution of the transverse electric field. Its spectrum has been studied in the quasi-classical limit at the consideration of the separate spin evolution. The spin-spin interaction and the quantum Bohm potential give contribution in the spectrum extraordinary SEAWs. This contribution is studied in this paper. Moreover, it is demonstrated that the spin-spin interaction leads to the existence of the extraordinary SEAWs if the SSE is neglected. It has been found that the SSE causes the instability of the extraordinary SEAW at the large wavelengths, but the quantum Bohm potential leads to the full stabilization of the spectrum.

Spinon dynamics in quantum integrable antiferromagnets

NASA Astrophysics Data System (ADS)

Vlijm, R.; Caux, J.-S.

2016-05-01

The excitations of the Heisenberg antiferromagnetic spin chain in zero field are known as spinons. As pairwise-created fractionalized excitations, spinons are important in the understanding of inelastic neutron scattering experiments in (quasi-)one-dimensional materials. In the present paper, we consider the real space-time dynamics of spinons originating from a local spin flip on the antiferromagnetic ground state of the (an)isotropic Heisenberg spin-1/2 model and the Babujan-Takhtajan spin-1 model. By utilizing algebraic Bethe ansatz methods at finite system size to compute the expectation value of the local magnetization and spin-spin correlations, spinons are visualized as propagating domain walls in the antiferromagnetic spin ordering with anisotropy dependent behavior. The spin-spin correlation after the spin flip displays a light cone, satisfying the Lieb-Robinson bound for the propagation of correlations at the spinon velocity.

Widespread spin polarization effects in photoemission from topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations ofmore » photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.« less

Stern-Gerlach dynamics with quantum propagators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, Bailey C.; Berrondo, Manuel; Van Huele, Jean-Francois S.

2011-01-15

We study the quantum dynamics of a nonrelativistic neutral particle with spin in inhomogeneous external magnetic fields. We first consider fields with one-dimensional inhomogeneities, both unphysical and physical, and construct the corresponding analytic propagators. We then consider fields with two-dimensional inhomogeneities and develop an appropriate numerical propagation method. We propagate initial states exhibiting different degrees of space localization and various initial spin configurations, including both pure and mixed spin states. We study the evolution of their spin densities and identify characteristic features of spin density dynamics, such as the spatial separation of spin components, and spin localization or accumulation. Wemore » compare our approach and our results with the coverage of the Stern-Gerlach effect in the literature, and we focus on nonstandard Stern-Gerlach outcomes, such as radial separation, spin focusing, spin oscillation, and spin flipping.« less

Localizable entanglement in antiferromagnetic spin chains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, B.-Q.; Korepin, V.E.

2004-06-01

Antiferromagnetic spin chains play an important role in condensed matter and statistical mechanics. Recently XXX spin chain was discussed in relation to information theory. Here we consider localizable entanglement. It is how much entanglement can be localized on two spins by performing local measurements on other individual spins (in a system of many interacting spins). We consider the ground state of antiferromagnetic spin chain. We study localizable entanglement [represented by concurrence] between two spins. It is a function of the distance. We start with isotropic spin chain. Then we study effects of anisotropy and magnetic field. We conclude that anisotropymore » increases the localizable entanglement. We discovered high sensitivity to a magnetic field in cases of high symmetry. We also evaluated concurrence of these two spins before the measurement to illustrate that the measurement raises the concurrence.« less

Enhanced thermo-spin effects in iron-oxide/metal multilayers

NASA Astrophysics Data System (ADS)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Quasiparticle spin resonance and coherence in superconducting aluminium.

PubMed

Quay, C H L; Weideneder, M; Chiffaudel, Y; Strunk, C; Aprili, M

2015-10-26

Conventional superconductors were long thought to be spin inert; however, there is now increasing interest in both (the manipulation of) the internal spin structure of the ground-state condensate, as well as recently observed long-lived, spin-polarized excitations (quasiparticles). We demonstrate spin resonance in the quasiparticle population of a mesoscopic superconductor (aluminium) using novel on-chip microwave detection techniques. The spin decoherence time obtained (∼100 ps), and its dependence on the sample thickness are consistent with Elliott-Yafet spin-orbit scattering as the main decoherence mechanism. The striking divergence between the spin coherence time and the previously measured spin imbalance relaxation time (∼10 ns) suggests that the latter is limited instead by inelastic processes. This work stakes out new ground for the nascent field of spin-based electronics with superconductors or superconducting spintronics.

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

Effective one body approach to the dynamics of two spinning black holes with next-to-leading order spin-orbit coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damour, Thibault; Jaranowski, Piotr; Schaefer, Gerhard

2008-07-15

Using a recent, novel Hamiltonian formulation of the gravitational interaction of spinning binaries, we extend the effective one body (EOB) description of the dynamics of two spinning black holes to next-to-leading order (NLO) in the spin-orbit interaction. The spin-dependent EOB Hamiltonian is constructed from four main ingredients: (i) a transformation between the 'effective' Hamiltonian and the 'real' one; (ii) a generalized effective Hamilton-Jacobi equation involving higher powers of the momenta; (iii) a Kerr-type effective metric (with Pade-resummed coefficients) which depends on the choice of some basic 'effective spin vector' S{sub eff}, and which is deformed by comparable-mass effects; and (iv)more » an additional effective spin-orbit interaction term involving another spin vector {sigma}. As a first application of the new, NLO spin-dependent EOB Hamiltonian, we compute the binding energy of circular orbits (for parallel spins) as a function of the orbital frequency, and of the spin parameters. We also study the characteristics of the last stable circular orbit: binding energy, orbital frequency, and the corresponding dimensionless spin parameter a{sub LSO}{identical_to}cJ{sub LSO}/(G(H{sub LSO}/c{sup 2}){sup 2}). We find that the inclusion of NLO spin-orbit terms has a significant 'moderating' effect on the dynamical characteristics of the circular orbits for large and parallel spins.« less

Antiferromagnetic spintronics

NASA Astrophysics Data System (ADS)

Baltz, V.; Manchon, A.; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

2018-01-01

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

Spin Hall effects

NASA Astrophysics Data System (ADS)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical point of view, focusing on well-established and accepted physics. In such a young field, there remains much to be understood and explored, hence some of the future challenges and opportunities of this rapidly evolving area of spintronics are outlined.

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laczkowski, P.; Rojas-Sánchez, J.-C.; INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble

2014-04-07

We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

Lattice spin models for non-Abelian chiral spin liquids

DOE PAGES

Lecheminant, P.; Tsvelik, A. M.

2017-04-26

Here, we suggest a class of two-dimensional lattice spin Hamiltonians describing non-Abelian SU(2) chiral spin liquids—spin analogs of fractional non-Abelian quantum Hall states—with gapped bulk and gapless chiral edge excitations described by the SU(2) n Wess-Zumino-Novikov-Witten conformal field theory. The models are constructed from an array of generalized spin-n/2 ladders with multi-spin-exchange interactions which are coupled by isolated spins. Such models allow a controllable analytic treatment starting from the one-dimensional limit and are characterized by a bulk gap and non-Abelian SU(2) n gapless edge excitations.

Spin-dependent thermoelectric effect and spin battery mechanism in triple quantum dots with Rashba spin-orbital interaction

NASA Astrophysics Data System (ADS)

Xu, Wei-Ping; Zhang, Yu-Ying; Wang, Qiang; Nie, Yi-Hang

2016-11-01

We have studied spin-dependent thermoelectric transport through parallel triple quantum dots with Rashba spin-orbital interaction (RSOI) embedded in an Aharonov-Bohm interferometer connected symmetrically to leads using nonequilibrium Green’s function method in the linear response regime. Under the appropriate configuration of magnetic flux phase and RSOI phase, the spin figure of merit can be enhanced and is even larger than the charge figure of merit. In particular, the charge and spin thermopowers as functions of both the magnetic flux phase and the RSOI phase present quadruple-peak structures in the contour graphs. For some specific configuration of the two phases, the device can provide a mechanism that converts heat into a spin voltage when the charge thermopower vanishes while the spin thermopower is not zero, which is useful in realizing the thermal spin battery and inducing a pure spin current in the device. Project supported by the National Natural Science Foundation of China (Grant Nos. 11274208 and 11447170).

Identifying a correlated spin fluctuation in an entangled spin chain subject to a quantum phase transition.

PubMed

Shimizu, Kaoru; Tokura, Yasuhiro

2015-12-01

This paper presents a theoretical framework for analyzing the quantum fluctuation properties of a quantum spin chain subject to a quantum phase transition. We can quantify the fluctuation properties by examining the correlation between the fluctuations of two neighboring spins subject to the quantum uncertainty. To do this, we first compute the reduced density matrix ρ of the spin pair from the ground state |Ψ⟩ of a spin chain, and then identify the quantum correlation part ρ(q) embedded in ρ. If the spin chain is translationally symmetric and characterized by a nearest-neighbor two-body spin interaction, we can determine uniquely the form of ρ(q) as W|Φ〉〈Φ| with the weight W ≤1, and quantify the fluctuation properties using the two-spin entangled state |Φ〉. We demonstrate the framework for a transverse-field quantum Ising spin chain and indicate its validity for more general spin chain models.

Non-volatile Clocked Spin Wave Interconnect for Beyond-CMOS Nanomagnet Pipelines

PubMed Central

Dutta, Sourav; Chang, Sou-Chi; Kani, Nickvash; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Naeemi, Azad

2015-01-01

The possibility of using spin waves for information transmission and processing has been an area of active research due to the unique ability to manipulate the amplitude and phase of the spin waves for building complex logic circuits with less physical resources and low power consumption. Previous proposals on spin wave logic circuits have suggested the idea of utilizing the magneto-electric effect for spin wave amplification and amplitude- or phase-dependent switching of magneto-electric cells. Here, we propose a comprehensive scheme for building a clocked non-volatile spin wave device by introducing a charge-to-spin converter that translates information from electrical domain to spin domain, magneto-electric spin wave repeaters that operate in three different regimes - spin wave transmitter, non-volatile memory and spin wave detector, and a novel clocking scheme that ensures sequential transmission of information and non-reciprocity. The proposed device satisfies the five essential requirements for logic application: nonlinearity, amplification, concatenability, feedback prevention, and complete set of Boolean operations. PMID:25955353

Correlation study of theoretical and experimental results for spin tests of a 1/10 scale radio control model

NASA Technical Reports Server (NTRS)

Bihrle, W., Jr.

1976-01-01

A correlation study was conducted to determine the ability of current analytical spin prediction techniques to predict the flight motions of a current fighter airplane configuration during the spin entry, the developed spin, and the spin recovery motions. The airplane math model used aerodynamics measured on an exact replica of the flight test model using conventional static and forced-oscillation wind-tunnel test techniques and a recently developed rotation-balance test apparatus capable of measuring aerodynamics under steady spinning conditions. An attempt was made to predict the flight motions measured during stall/spin flight testing of an unpowered, radio-controlled model designed to be a 1/10 scale, dynamically-scaled model of a current fighter configuration. Comparison of the predicted and measured flight motions show that while the post-stall and spin entry motions were not well-predicted, the developed spinning motion (a steady flat spin) and the initial phases of the spin recovery motion are reasonably well predicted.

Thermodynamic properties of Fermi gases in states with defined many-body spins

NASA Astrophysics Data System (ADS)

Yurovsky, Vladimir

2016-05-01

Zero-range interactions in cold spin- 1 / 2 Fermi gases can be described by single interaction strength, since collisions of atoms in the same spin state are forbidden by the Pauli principle. In a spin-independent trap potential (even in the presence of a homogeneous spin-dependent external field), the gas can persist in a state with the given many-body spin, since the spin operator commutes with the Hamiltonian. Spin and spatial degrees of freedom in such systems are separated, and the spin and spatial wavefunctions form non-Abelian irreducible representations of the symmetric group, unless the total spin is S = N / 2 for N atoms (see). Although the total wavefunction, being a linear combination of products of the spin and spatial functions, is permutation-antisymmetric, the non-Abelian permutation symmetry is disclosed in the matrix elements and, as demonstrated here, in thermodynamic properties. The effects include modification of the specific heat and compressibility of the gas.

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

PubMed Central

Boschini, F.; Mansurova, M.; Mussler, G.; Kampmeier, J.; Grützmacher, D.; Braun, L.; Katmis, F.; Moodera, J. S.; Dallera, C.; Carpene, E.; Franz, C.; Czerner, M.; Heiliger, C.; Kampfrath, T.; Münzenberg, M.

2015-01-01

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. We investigate a spin-related signal present only during the laser excitation studying real and imaginary part of the complex Kerr angle by disentangling spin and lattice contributions. This coherent signal is only present at the time of the pump-pulses’ light field and can be described in terms of a Raman coherence time. The Raman transition involves states at the bottom edge of the conduction band. We demonstrate a coherent femtosecond control of spin-polarization for electronic states at around the Dirac cone. PMID:26510509

Spin-orbit scattering visualized in quasiparticle interference

NASA Astrophysics Data System (ADS)

Kohsaka, Y.; Machida, T.; Iwaya, K.; Kanou, M.; Hanaguri, T.; Sasagawa, T.

2017-03-01

In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons—spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle interference (QPI) imaged by spectroscopic-imaging scanning tunneling microscopy. The experimental data of a polar semiconductor BiTeI are well reproduced by numerical simulations with the T -matrix formalism that include not only scalar scattering normally adopted but also spin-orbit scattering stronger than scalar scattering. To accelerate the simulations, we extend the standard efficient method of QPI calculation for momentum-independent scattering to be applicable even for spin-orbit scattering. We further identify a selection rule that makes spin-orbit scattering visible in the QPI pattern. These results demonstrate that spin-orbit scattering can exert predominant influence on QPI patterns and thus suggest that QPI measurement is available to detect spin-orbit scattering.

Enhancing Spin Filters by Use of Bulk Inversion Asymmetry

NASA Technical Reports Server (NTRS)

Ting, David; Cartoixa,Xavier

2007-01-01

Theoretical calculations have shown that the degrees of spin polarization in proposed nonmagnetic semiconductor resonant tunneling spin filters could be increased through exploitation of bulk inversion asymmetry (BIA). These enhancements would be effected through suitable orientation of spin collectors (or spin-polarization- inducing lateral electric fields), as described below. Spin filters -- more precisely, sources of spin-polarized electron currents -- have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-transport electronics). The proposed spin filters were to be based on the Rashba effect, which is an energy splitting of what would otherwise be degenerate quantum states, caused by a spinorbit interaction in conjunction with a structural-inversion asymmetry (SIA) in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. In a spin filter, the spin-polarized currents produced by the Rashba effect would be extracted by quantum-mechanical resonant tunneling.

When measured spin polarization is not spin polarization

NASA Astrophysics Data System (ADS)

Dowben, P. A.; Wu, Ning; Binek, Christian

2011-05-01

Spin polarization is an unusually ambiguous scientific idiom and, as such, is rarely well defined. A given experimental methodology may allow one to quantify a spin polarization but only in its particular context. As one might expect, these ambiguities sometimes give rise to inappropriate interpretations when comparing the spin polarizations determined through different methods. The spin polarization of CrO2 and Cr2O3 illustrate some of the complications which hinders comparisons of spin polarization values.

Inductive detection of fieldlike and dampinglike ac inverse spin-orbit torques in ferromagnet/normal-metal bilayers

NASA Astrophysics Data System (ADS)

Berger, Andrew J.; Edwards, Eric R. J.; Nembach, Hans T.; Karenowska, Alexy D.; Weiler, Mathias; Silva, Thomas J.

2018-03-01

Functional spintronic devices rely on spin-charge interconversion effects, such as the reciprocal processes of electric field-driven spin torque and magnetization dynamics-driven spin and charge flow. Both dampinglike and fieldlike spin-orbit torques have been observed in the forward process of current-driven spin torque and dampinglike inverse spin-orbit torque has been well studied via spin pumping into heavy metal layers. Here, we demonstrate that established microwave transmission spectroscopy of ferromagnet/normal metal bilayers under ferromagnetic resonance can be used to inductively detect the ac charge currents driven by the inverse spin-charge conversion processes. This technique relies on vector network analyzer ferromagnetic resonance (VNA-FMR) measurements. We show that in addition to the commonly extracted spectroscopic information, VNA-FMR measurements can be used to quantify the magnitude and phase of all ac charge currents in the sample, including those due to spin pumping and spin-charge conversion. Our findings reveal that Ni80Fe20/Pt bilayers exhibit both dampinglike and fieldlike inverse spin-orbit torques. While the magnitudes of both the dampinglike and fieldlike inverse spin-orbit torque are of comparable scale to prior reported values for similar material systems, we observed a significant dependence of the dampinglike magnitude on the order of deposition. This suggests interface quality plays an important role in the overall strength of the dampinglike spin-to-charge conversion.

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

PubMed

Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

2015-05-01

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

Kinetic analysis of spin current contribution to spectrum of electromagnetic waves in spin-1/2 plasma. I. Dielectric permeability tensor for magnetized plasmas

NASA Astrophysics Data System (ADS)

Andreev, Pavel A.

2017-02-01

The dielectric permeability tensor for spin polarized plasmas is derived in terms of the spin-1/2 quantum kinetic model in six-dimensional phase space. Expressions for the distribution function and spin distribution function are derived in linear approximations on the path of dielectric permeability tensor derivation. The dielectric permeability tensor is derived for the spin-polarized degenerate electron gas. It is also discussed at the finite temperature regime, where the equilibrium distribution function is presented by the spin-polarized Fermi-Dirac distribution. Consideration of the spin-polarized equilibrium states opens possibilities for the kinetic modeling of the thermal spin current contribution in the plasma dynamics.

Spin filter and spin valve in ferromagnetic graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yu, E-mail: kwungyusung@gmail.com; Dai, Gang; Research Center for Microsystems and Terahertz, China Academy of Engineering Physics, Mianyang 621999

2015-06-01

We propose and demonstrate that a EuO-induced and top-gated graphene ferromagnetic junction can be simultaneously operated as a spin filter and a spin valve. We attribute such a remarkable result to a coexistence of a half-metal band and a common energy gap for opposite spins in ferromagnetic graphene. We show that both the spin filter and the spin valve can be effectively controlled by a back gate voltage, and they survive for practical metal contacts and finite temperature. Specifically, larger single spin currents and on-state currents can be reached with contacts with work functions similar to graphene, and the spinmore » filter can operate at higher temperature than the spin valve.« less

Field-induced negative differential spin lifetime in silicon.

PubMed

Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

2012-04-13

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

Electrical manipulation of dynamic magnetic impurity and spin texture of helical Dirac fermions

NASA Astrophysics Data System (ADS)

Wang, Rui-Qiang; Zhong, Min; Zheng, Shi-Han; Yang, Mou; Wang, Guang-Hui

2016-05-01

We have theoretically investigated the spin inelastic scattering of helical electrons off a high-spin nanomagnet absorbed on a topological surface. The nanomagnet is treated as a dynamic quantum spin and driven by the spin transfer torque effect. We proposed a mechanism to electrically manipulate the spin texture of helical Dirac fermions rather than by an external magnetic field. By tuning the bias voltage and the direction of impurity magnetization, we present rich patterns of spin texture, from which important fingerprints exclusively associated with the spin helical feature are obtained. Furthermore, it is found that the nonmagnetic potential can create the resonance state in the spin density with different physics as the previously reported resonance of charge density.

Spin resonance and spin fluctuations in a quantum wire

NASA Astrophysics Data System (ADS)

Pokrovsky, V. L.

2017-02-01

This is a review of theoretical works on spin resonance in a quantum wire associated with the spin-orbit interaction. We demonstrate that the spin-orbit induced internal "magnetic field" leads to a narrow spin-flip resonance at low temperatures in the absence of an applied magnetic field. An applied dc magnetic field perpendicular to and small compared with the spin-orbit field enhances the resonance absorption by several orders of magnitude. The component of applied field parallel to the spin-orbit field separates the resonance frequencies of right and left movers and enables a linearly polarized ac electric field to produce a dynamic magnetization as well as electric and spin currents. We start with a simple model of noninteracting electrons and then consider the interaction that is not weak in 1d electron system. We show that electron spin resonance in the spin-orbit field persists in the Luttinger liquid. The interaction produces an additional singularity (cusp) in the spin-flip channel associated with the plasma oscillation. As it was shown earlier by Starykh and his coworkers, the interacting 1d electron system in the external field with sufficiently large parallel component becomes unstable with respect to the appearance of a spin-density wave. This instability suppresses the spin resonance. The observation of the electron spin resonance in a thin wires requires low temperature and high intensity of electromagnetic field in the terahertz diapason. The experiment satisfying these two requirements is possible but rather difficult. An alternative approach that does not require strong ac field is to study two-time correlations of the total spin of the wire with an optical method developed by Crooker and coworkers. We developed theory of such correlations. We prove that the correlation of the total spin component parallel to the internal magnetic field is dominant in systems with the developed spin-density waves but it vanishes in Luttinger liquid. Thus, the measurement of spin correlations is a diagnostic tool to distinguish between the two states of electronic liquid in the quantum wire.

Do Gluons Carry Proton Spin? - Toward Resolving the Spin Crisis (445th Brookhaven Lecture)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazilevsky, Alexander

2009-01-21

Just as Earth and other planets spin within the solar system, subatomic quark and gluon particles spin within the protons and neutrons that spin within the nucleus of an atom. Quantum Chromodynamics (QCD) is a theory that describes interactions between subatomic particles and it has played a defining role in understanding the spin of protons and neutrons, which make up most of the visible mass in the universe. Experiments first completed at CERN and furthered at several other laboratories around the world revealed that surprisingly, quarks and their partnering anti-quarks are responsible for only 20 to 30 percent of protonmore » spin. These findings pointed to what would become known as "spin crisis." More recent experiments at BNL's Relativistic Heavy Ion Collider (RHIC), the first collider to smash protons that are "polarized," or made to spin in the same orientation, have helped to isolate the role of the gluon's spin within the spinning proton in hopes of resolving this crisis. In his lecture, Bazilevsky will explain how data from RHIC's PHENIX and STAR detectors help to reveal the role of gluons in the proton's spin. Bazilevsky will also discuss long- and short-term plans to attain a deeper look into the proton spin structure, utilizing RHIC and its future upgrades« less

Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

NASA Astrophysics Data System (ADS)

Majidi, Danial; Faez, Rahim

2017-02-01

In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

Graphene based superconducting junctions as spin sources for spintronics

NASA Astrophysics Data System (ADS)

Emamipour, Hamidreza

2018-02-01

We investigate spin-polarized transport in graphene-based ferromagnet-superconductor junctions within the Blonder-Tinkham-Klapwijk formalism by using spin-polarized Dirac-Bogoliubov-de-Gennes equations. We consider superconductor in spin-singlet s-wave pairing state and ferromagnet is modeled by an exchange field with energy of Ex. We have found that graphene-based junctions can be used to produce highly spin-polarized current in different situations. For example, if we design a junction with high Ex and EF compared to order parameter of superconductor, then one can have a large spin-polarized current which is tunable in magnitude and sign by bias voltage and Ex. Therefore graphene-based superconducting junction can be used in spintronic devices in alternative to conventional junctions or half-metallic ferromagnets. Also, we have found that the calculated spin polarization can be used as a tool to distinguish specular Andreev reflection (SAR) from the conventional Andreev reflection (CAR) such that in the case of CAR, spin polarization in sub-gap region is completely negative which means that spin-down current is greater than spin-up current. When the SAR is dominated, the spin polarization is positive at all bias-voltages, which itself shows that spin-up current is greater than spin-down current.

Spin-resolved electron waiting times in a quantum-dot spin valve

NASA Astrophysics Data System (ADS)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Two spinning ways for precession dynamo.

PubMed

Cappanera, L; Guermond, J-L; Léorat, J; Nore, C

2016-04-01

It is numerically demonstrated by means of a magnetohydrodynamic code that precession can trigger dynamo action in a cylindrical container. Fixing the angle between the spin and the precession axis to be 1/2π, two limit configurations of the spinning axis are explored: either the symmetry axis of the cylinder is parallel to the spin axis (this configuration is henceforth referred to as the axial spin case), or it is perpendicular to the spin axis (this configuration is referred to as the equatorial spin case). In both cases, the centro-symmetry of the flow breaks when the kinetic Reynolds number increases. Equatorial spinning is found to be more efficient in breaking the centro-symmetry of the flow. In both cases, the average flow in the reference frame of the mantle converges to a counter-rotation with respect to the spin axis as the Reynolds number grows. We find a scaling law for the average kinetic energy in term of the Reynolds number in the axial spin case. In the equatorial spin case, the unsteady asymmetric flow is shown to be capable of sustaining dynamo action in the linear and nonlinear regimes. The magnetic field is mainly dipolar in the equatorial spin case, while it is is mainly quadrupolar in the axial spin case.

Theory of nonreciprocal spin-wave excitations in spin Hall oscillators with Dzyaloshinskii-Moriya interaction

NASA Astrophysics Data System (ADS)

Zivieri, R.; Giordano, A.; Verba, R.; Azzerboni, B.; Carpentieri, M.; Slavin, A. N.; Finocchio, G.

2018-04-01

A two-dimensional analytical model for the description of the excitation of nonreciprocal spin waves by spin current in spin Hall oscillators in the presence of the interfacial Dzyaloshinskii-Moriya interaction (i -DMI) is developed. The theory allows one to calculate the threshold current for the excitation of spin waves, as well as the frequencies and spatial profiles of the excited spin-wave modes. It is found that the frequency of the excited spin waves exhibits a quadratic redshift with the i -DMI strength. At the same time, in the range of small and moderate values of the i -DMI constant, the averaged wave number of the excited spin waves is almost independent of the i -DMI, which results in a rather weak dependence on the i -DMI of the threshold current of the spin-wave excitation. The obtained analytical results are confirmed by the results of micromagnetic simulations.

Influence of DC-biasing on the performance of graphene spin valve

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Hussain, Tassadaq; Iqbal, Muhammad Javaid

2018-04-01

Generating and controlling the spin valve signal are key factors in 'spintronics', which aims to utilize the spin degree of electrons. For this purpose, spintronic devices are constructed that can detect the spin signal. Here we investigate the effect of direct current (DC) on the magnetoresistance (MR) of graphene spin valve. The DC input not only decreases the magnitude of MR but also distorts the spin valve signal at higher DC inputs. Also, low temperature measurements revealed higher MR for the device, while the magnitude is noticed to decrease at higher temperatures. Furthermore, the spin polarization associated with NiFe electrodes is continuously increased at low DC bias and low temperatures. We also demonstrate the ohmic behavior of graphene spin valve by showing linear current-voltage (I-V) characteristics of the junction. Our findings may contribute significantly in modulating and controlling the spin transport properties of vertical spin valve structures.

Non-metal spintronics: study of spin-dependent transport in InSb- and InAs-based nanopatterned heterostructures

NASA Astrophysics Data System (ADS)

Heremans, J. J.; Chen, Hong; Peters, J. A.; Goel, N.; Chung, S. J.; Santos, M. B.; van Roy, W.; Borghs, G.

2006-03-01

Spin-orbit interaction in semiconductor heterostructures can lead to various spin-dependent electronic transport effects without the presence of magnetic materials. Mesoscopic samples were fabricated on InSb/InAlSb and InAs/AlGaSb two-dimensional electron systems, where spin-orbit interaction is strong. In mesoscopic devices, the effects of spin-orbit interaction are not averaged out over the geometry, and lead to observable electronic properties. We experimentally demonstrate spin-split ballistic transport and the creation of fully spin-polarized electron beams using spin-dependent reflection geometries and transverse magnetic focusing geometries. Spin-dependent transport properties in the semiconductor materials are also investigated using antidot lattices. Spin-orbit interaction effects in high-mobility semiconductor devices may be utilized toward the design of novel spintronics implementations. We acknowledge NSF DMR-0094055 (JJH), DMR-0080054, DMR-0209371 (MBS).

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes.

PubMed

Nishizawa, Nozomi; Nishibayashi, Kazuhiro; Munekata, Hiro

2017-02-21

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density ( J ) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm 2 There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Charge instability in double quantum dots in Ge/Si core/shell nanowires

NASA Astrophysics Data System (ADS)

Zarassi, Azarin; Su, Zhaoen; Schwenderling, Jens; Frolov, Sergey M.; Hocevar, Moïra; Nguyen, Binh-Minh; Yoo, Jinkyoung; Dayeh, Shadi A.

Controlling dephasing times are of great challenge in the studies of spin qubit. Reported long spin coherence time and predicted strong spin-orbit interaction of holes in Ge/Si core/shell nanowires, as well as their weak coupling to very few nuclear spins of these group IV semiconductors, persuade electrical spin control. We have established Pauli spin blockade in gate-tunable quantum dots formed in these nanowires. The g-factor has been measured and evidence of spin-orbit interaction has been observed in the presence of magnetic field. However, electrical control of spins requires considerable stability in the double dot configuration, and imperfectly these dots suffer from poor stability. We report on fabrication modifications on Ge/Si core/shell nanowires, as well as measurement techniques to suppress the charge instabilities and ease the way to study spin-orbit coupling and resolve electric dipole spin resonance.

Optical Control of a Nuclear Spin in Diamond

NASA Astrophysics Data System (ADS)

Levonian, David; Goldman, Michael; Degreve, Kristiaan; Choi, Soonwon; Markham, Matthew; Twitchen, Daniel; Lukin, Mikhail

2017-04-01

The nitrogen-vacancy (NV) center in diamond has emerged as a promising candidate for quantum information and quantum communication applications. The NV center's potential as a quantum register is due to the long coherence time of its spin-triplet electronic ground state, the optical addressability of its electronic transitions, and the presence of nearby ancillary nuclear spins. The NV center's electronic spin and nearby nuclear spins are most commonly manipulated using applied microwave and RF fields, but this approach would be difficult to scale up for use with an array of NV-based quantum registers. In this context, all-optical manipulation would be more scalable, technically simpler, and potentially faster. Although all-optical control of the electronic spin has been demonstrated, it is an outstanding problem for the nuclear spins. Here, we use an optical Raman scheme to implement nuclear spin-specific control of the electronic spin and coherent control of the 14N nuclear spin.

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

NASA Astrophysics Data System (ADS)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

Angular dependence of spin-orbit spin-transfer torques

NASA Astrophysics Data System (ADS)

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurélien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-04-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Charge-induced spin torque in Weyl semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai,M.; Ptitsyn, V.; Roser, T.

To keep the spin tune in the spin depolarizing resonance free region is required for accelerating polarized protons to high energy. In RHIC, two snakes are located at the opposite side of each accelerator. They are configured to yield a spin tune of 1/2. Two pairs of spin rotators are located at either side of two detectors in each ring in RHIC to provide longitudinal polarization for the experiments. Since the spin rotation from vertical to longitudinal is localized between the two rotators, the spin rotators do not change the spin tune. However, due to the imperfection of the orbitsmore » around the snakes and rotators, the spin tune can be shifted. This note presents the impact of the horizontal orbital angle between the two snakes on the spin tune, as well as the effect of the vertical orbital angle between two rotators at either side of the collision point on the spin tune.« less

Quantum spin transistor with a Heisenberg spin chain

PubMed Central

Marchukov, O. V.; Volosniev, A. G.; Valiente, M.; Petrosyan, D.; Zinner, N. T.

2016-01-01

Spin chains are paradigmatic systems for the studies of quantum phases and phase transitions, and for quantum information applications, including quantum computation and short-distance quantum communication. Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a control spin excitation in the central gate part of the spin chain results in either perfect transfer of an arbitrary state of a target spin between the weakly coupled input and output ports, or its complete blockade at the input port. We also discuss a possible proof-of-concept realization of the corresponding spin chain with a one-dimensional ensemble of cold atoms with strong contact interactions. Our scheme is generally applicable to various implementations of tunable spin chains, and it paves the way for the realization of integrated quantum logic elements. PMID:27721438

Quantum spin transistor with a Heisenberg spin chain.

PubMed

Marchukov, O V; Volosniev, A G; Valiente, M; Petrosyan, D; Zinner, N T

2016-10-10

Spin chains are paradigmatic systems for the studies of quantum phases and phase transitions, and for quantum information applications, including quantum computation and short-distance quantum communication. Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a control spin excitation in the central gate part of the spin chain results in either perfect transfer of an arbitrary state of a target spin between the weakly coupled input and output ports, or its complete blockade at the input port. We also discuss a possible proof-of-concept realization of the corresponding spin chain with a one-dimensional ensemble of cold atoms with strong contact interactions. Our scheme is generally applicable to various implementations of tunable spin chains, and it paves the way for the realization of integrated quantum logic elements.

Competition between Bose-Einstein Condensation and Spin Dynamics.

PubMed

Naylor, B; Brewczyk, M; Gajda, M; Gorceix, O; Maréchal, E; Vernac, L; Laburthe-Tolra, B

2016-10-28

We study the impact of spin-exchange collisions on the dynamics of Bose-Einstein condensation by rapidly cooling a chromium multicomponent Bose gas. Despite relatively strong spin-dependent interactions, the critical temperature for Bose-Einstein condensation is reached before the spin degrees of freedom fully thermalize. The increase in density due to Bose-Einstein condensation then triggers spin dynamics, hampering the formation of condensates in spin-excited states. Small metastable spinor condensates are, nevertheless, produced, and they manifest in strong spin fluctuations.

Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

DTIC Science & Technology

2017-11-09

to correlate the atomic-scale magnetism and spin density with the macroscopic spin transport properties of 2D materials. This is a long-term effort...devices, our goal is to correlate the atomic-scale magnetism and spin density with the macroscopic spin transport properties of 2D materials. This is a... correlate the change in transport with the atomic structure of hydrogen-doped graphene, we subsequently use the STM to investigate the graphene

Analysis of Bose system in spin-orbit coupled Bose-Fermi mixture to induce a spin current of fermions

NASA Astrophysics Data System (ADS)

Sakamoto, R.; Ono, Y.; Hatsuda, R.; Shiina, K.; Arahata, E.; Mori, H.

2018-03-01

We found that a spin current of fermions could be induced in spin-orbit coupled Bose-Fermi mixture at zero temperature. Since spatial change of the spin structure of the bosons is necessary to induce the spin current of the fermions, we analyzed the ground state of the bosons in the mixture system, using a variational method. The obtained phase diagram indicated the presence of a bosonic phase that allowed the fermions to have a spin current.

Optically controlled locking of the nuclear field via coherent dark-state spectroscopy.

PubMed

Xu, Xiaodong; Yao, Wang; Sun, Bo; Steel, Duncan G; Bracker, Allan S; Gammon, Daniel; Sham, L J

2009-06-25

A single electron or hole spin trapped inside a semiconductor quantum dot forms the foundation for many proposed quantum logic devices. In group III-V materials, the resonance and coherence between two ground states of the single spin are inevitably affected by the lattice nuclear spins through the hyperfine interaction, while the dynamics of the single spin also influence the nuclear environment. Recent efforts have been made to protect the coherence of spins in quantum dots by suppressing the nuclear spin fluctuations. However, coherent control of a single spin in a single dot with simultaneous suppression of the nuclear fluctuations has yet to be achieved. Here we report the suppression of nuclear field fluctuations in a singly charged quantum dot to well below the thermal value, as shown by an enhancement of the single electron spin dephasing time T(2)*, which we measure using coherent dark-state spectroscopy. The suppression of nuclear fluctuations is found to result from a hole-spin assisted dynamic nuclear spin polarization feedback process, where the stable value of the nuclear field is determined only by the laser frequencies at fixed laser powers. This nuclear field locking is further demonstrated in a three-laser measurement, indicating a possible enhancement of the electron spin T(2)* by a factor of several hundred. This is a simple and powerful method of enhancing the electron spin coherence time without use of 'spin echo'-type techniques. We expect that our results will enable the reproducible preparation of the nuclear spin environment for repetitive control and measurement of a single spin with minimal statistical broadening.

Geometry of spin coherent states

NASA Astrophysics Data System (ADS)

Chryssomalakos, C.; Guzmán-González, E.; Serrano-Ensástiga, E.

2018-04-01

Spin states of maximal projection along some direction in space are called (spin) coherent, and are, in many respects, the ‘most classical’ available. For any spin s, the spin coherent states form a 2-sphere in the projective Hilbert space \

Rotational Invariance of the 2d Spin - Spin Correlation Function

NASA Astrophysics Data System (ADS)

Pinson, Haru

2012-09-01

At the critical temperature in the 2d Ising model on the square lattice, we establish the rotational invariance of the spin-spin correlation function using the asymptotics of the spin-spin correlation function along special directions (McCoy and Wu in the two dimensional Ising model. Harvard University Press, Cambridge, 1973) and the finite difference Hirota equation for which the spin-spin correlation function is shown to satisfy (Perk in Phys Lett A 79:3-5, 1980; Perk in Proceedings of III international symposium on selected topics in statistical mechanics, Dubna, August 22-26, 1984, JINR, vol II, pp 138-151, 1985).

Spin Current through a Quantum Dot in the Presence of an Oscillating Magnetic Field

NASA Astrophysics Data System (ADS)

Zhang, Ping; Xue, Qi-Kun; Xie, X. C.

2003-11-01

Nonequilibrium spin transport through an interacting quantum dot is analyzed. The coherent spin oscillations in the dot provide a generating source for spin current. In the interacting regime, the Kondo effect is influenced in a significant way by the presence of the processing magnetic field. In particular, when the precession frequency is tuned to resonance between spin-up and spin-down states of the dot, Kondo singularity for each spin splits into a superposition of two resonance peaks. The Kondo-type cotunneling contribution is manifested by a large enhancement of the pumped spin current in the strong coupling low temperature regime.

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

NASA Astrophysics Data System (ADS)

Yoneda, Jun; Takeda, Kenta; Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Allison, Giles; Honda, Takumu; Kodera, Tetsuo; Oda, Shunri; Hoshi, Yusuke; Usami, Noritaka; Itoh, Kohei M.; Tarucha, Seigo

2018-02-01

The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility1-4, has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations5-7. Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations8-10. Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 μs)11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise—rather than conventional magnetic noise—as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.

Cross-correlation spin noise spectroscopy of heterogeneous interacting spin systems

DOE PAGES

Roy, Dibyendu; Yang, Luyi; Crooker, Scott A.; ...

2015-04-30

Interacting multi-component spin systems are ubiquitous in nature and in the laboratory. As such, investigations of inter-species spin interactions are of vital importance. Traditionally, they are studied by experimental methods that are necessarily perturbative: e.g., by intentionally polarizing or depolarizing one spin species while detecting the response of the other(s). Here, we describe and demonstrate an alternative approach based on multi-probe spin noise spectroscopy, which can reveal inter-species spin interactions - under conditions of strict thermal equilibrium - by detecting and cross-correlating the stochastic fluctuation signals exhibited by each of the constituent spin species. Specifically, we consider a two-component spinmore » ensemble that interacts via exchange coupling, and we determine cross-correlations between their intrinsic spin fluctuations. The model is experimentally confirmed using “two-color” optical spin noise spectroscopy on a mixture of interacting Rb and Cs vapors. Noise correlations directly reveal the presence of inter-species spin exchange, without ever perturbing the system away from thermal equilibrium. These non-invasive and noise-based techniques should be generally applicable to any heterogeneous spin system in which the fluctuations of the constituent components are detectable.« less

Design of Transverse Spinning of Light with Globally Unique Handedness

NASA Astrophysics Data System (ADS)

Piao, Xianji; Yu, Sunkyu; Park, Namkyoo

2018-05-01

Access to the transverse spin of light has unlocked new regimes in topological photonics. To achieve the transverse spin from nonzero longitudinal fields, various platforms that derive transversely confined waves based on focusing, interference, or evanescent waves have been suggested. Nonetheless, because of the transverse confinement inherently accompanying sign reversal of the field derivative, the resulting transverse spin handedness of each field experiences spatial inversion, which leads to a mismatch between the intensities of the field and its spin component and hinders the global observation of the transverse spin. Here, we reveal a globally pure transverse spin of the electric field in which the field intensity signifies the spin distribution. Starting from the target spin mode for the inverse design of required spatial profiles of anisotropic permittivities, we show that the elliptic-hyperbolic transition around the epsilon-near-zero permittivity allows for the global conservation of transverse spin handedness of the electric field across the topological interface between anisotropic metamaterials. Extending to the non-Hermitian regime, we develop annihilated transverse spin modes to cover the entire Poincaré sphere of the meridional plane. This result realizes the complete optical analogy of three-dimensional quantum spin states.

Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

NASA Astrophysics Data System (ADS)

Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

2016-09-01

Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

Interplay between resonant tunneling and spin precession oscillations in all-electric all-semiconductor spin transistors

NASA Astrophysics Data System (ADS)

Alomar, M. I.; Serra, Llorenç; Sánchez, David

2016-08-01

We investigate the transmission properties of a spin transistor coupled to two quantum point contacts acting as a spin injector and detector. In the Fabry-Pérot regime, transport is mediated by quasibound states formed between tunnel barriers. Interestingly, the spin-orbit interaction of the Rashba type can be tuned in such a way that nonuniform spin-orbit fields can point along distinct directions at different points of the sample. We discuss both spin-conserving and spin-flipping transitions as the spin-orbit angle of orientation increases from parallel to antiparallel configurations. Spin precession oscillations are clearly seen as a function of the length of the central channel. Remarkably, we find that these oscillations combine with the Fabry-Pérot motion, giving rise to quasiperiodic transmissions in the purely one-dimensional case. Furthermore, we consider the more realistic case of a finite width in the transverse direction and find that the coherent oscillations become deteriorated for moderate values of the spin-orbit strength. Our results then determine the precise role of the spin-orbit intersubband coupling potential in the Fabry-Pérot-Datta-Das intermixed oscillations.

Development of New Open-Shell Perturbation and Coupled-Cluster Theories Based on Symmetric Spin Orbitals

NASA Technical Reports Server (NTRS)

Lee, Timothy J.; Arnold, James O. (Technical Monitor)

1994-01-01

A new spin orbital basis is employed in the development of efficient open-shell coupled-cluster and perturbation theories that are based on a restricted Hartree-Fock (RHF) reference function. The spin orbital basis differs from the standard one in the spin functions that are associated with the singly occupied spatial orbital. The occupied orbital (in the spin orbital basis) is assigned the delta(+) = 1/square root of 2(alpha+Beta) spin function while the unoccupied orbital is assigned the delta(-) = 1/square root of 2(alpha-Beta) spin function. The doubly occupied and unoccupied orbitals (in the reference function) are assigned the standard alpha and Beta spin functions. The coupled-cluster and perturbation theory wave functions based on this set of "symmetric spin orbitals" exhibit much more symmetry than those based on the standard spin orbital basis. This, together with interacting space arguments, leads to a dramatic reduction in the computational cost for both coupled-cluster and perturbation theory. Additionally, perturbation theory based on "symmetric spin orbitals" obeys Brillouin's theorem provided that spin and spatial excitations are both considered. Other properties of the coupled-cluster and perturbation theory wave functions and models will be discussed.

Controllable spin polarization and spin filtering in a zigzag silicene nanoribbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farokhnezhad, Mohsen, E-mail: Mohsen-farokhnezhad@physics.iust.ac.ir; Esmaeilzadeh, Mahdi, E-mail: mahdi@iust.ac.ir; Pournaghavi, Nezhat

2015-05-07

Using non-equilibrium Green's function, we study the spin-dependent electron transport properties in a zigzag silicene nanoribbon. To produce and control spin polarization, it is assumed that two ferromagnetic strips are deposited on the both edges of the silicene nanoribbon and an electric field is perpendicularly applied to the nanoribbon plane. The spin polarization is studied for both parallel and anti-parallel configurations of exchange magnetic fields induced by the ferromagnetic strips. We find that complete spin polarization can take place in the presence of perpendicular electric field for anti-parallel configuration and the nanoribbon can work as a perfect spin filter. Themore » spin direction of transmitted electrons can be easily changed from up to down and vice versa by reversing the electric field direction. For parallel configuration, perfect spin filtering can occur even in the absence of electric field. In this case, the spin direction can be changed by changing the electron energy. Finally, we investigate the effects of nonmagnetic Anderson disorder on spin dependent conductance and find that the perfect spin filtering properties of nanoribbon are destroyed by strong disorder, but the nanoribbon retains these properties in the presence of weak disorder.« less

Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

PubMed

Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

2015-05-22

Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

PubMed

Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

2009-10-09

Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

Collisional spin-oriented Sherman function in electron-hole semiconductor plasmas: Landau damping effect

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Jung, Young-Dae

2018-04-01

The influence of Landau damping on the spin-oriented collisional asymmetry is investigated in electron-hole semiconductor plasmas. The analytical expressions of the spin-singlet and the spin-triplet scattering amplitudes as well as the spin-oriented asymmetry Sherman function are obtained as functions of the scattering angle, the Landau parameter, the effective Debye length, and the collision energy. It is found that the Landau damping effect enhances the spin-singlet and spin-triplet scattering amplitudes in the forward and back scattering domains, respectively. It is also found that the Sherman function increases with an increase in the Landau parameter. In addition, the spin-singlet scattering process is found to be dominant rather than the spin-triplet scattering process in the high collision energy domain.

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

DOE PAGES

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

2016-03-07

In this paper, we investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. Finally, we also suggest that metallic antiferromagnets may be good candidates for the investigationmore » of various unidirectional effects related to novel spin-orbitronics phenomena.« less

Relaxation-optimized transfer of spin order in Ising spin chains

NASA Astrophysics Data System (ADS)

Stefanatos, Dionisis; Glaser, Steffen J.; Khaneja, Navin

2005-12-01

In this paper, we present relaxation optimized methods for the transfer of bilinear spin correlations along Ising spin chains. These relaxation optimized methods can be used as a building block for the transfer of polarization between distant spins on a spin chain, a problem that is ubiquitous in multidimensional nuclear magnetic resonance spectroscopy of proteins. Compared to standard techniques, significant reduction in relaxation losses is achieved by these optimized methods when transverse relaxation rates are much larger than the longitudinal relaxation rates and comparable to couplings between spins. We derive an upper bound on the efficiency of the transfer of the spin order along a chain of spins in the presence of relaxation and show that this bound can be approached by the relaxation optimized pulse sequences presented in the paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fajardo, E. A.; Zülicke, U.; Winkler, R.

We discuss the universal spin dynamics in quasi-one-dimensional systems including the real spin in narrow-gap semiconductors like InAs and InSb, the valley pseudospin in staggered single-layer graphene, and the combination of real spin and valley pseudospin characterizing single-layer transition metal dichalcogenides (TMDCs) such as MoS2, WS2, MoS2, and WSe2. All these systems can be described by the same Dirac-like Hamiltonian. Spin-dependent observable effects in one of these systems thus have counterparts in each of the other systems. Effects discussed in more detail include equilibrium spin currents, current-induced spin polarization (Edelstein effect), and spin currents generated via adiabatic spin pumping. Ourmore » work also suggests that a long-debated spin-dependent correction to the position operator in single-band models should be absent.« less

Compilation of Test Data on 111 Free-Spinning Airplane Models Tested in the Langley 15-Foot and 20-Foot Free-Spinning Tunnels

NASA Technical Reports Server (NTRS)

Malvestuto, Frank S.; Gale, Lawrence J.; Wood, John H.

1947-01-01

A compilation of free-spinning-airplane model data on the spin and recovery characteristics of 111 airplanes is presented. These data were previously published in separate memorandum reports and were obtained from free-spinning tests in the Langley 15-foot and the Langley 20-foot free-spinning tunnels. The model test data presented include the steady-spin and recovery characteristics of each model for various combinations of aileron and elevator deflections and for various loadings and dimensional configurations. Dimensional data, mass data, and a three-view drawing of the corresponding free-spinning tunnel model are also presented for each airplane. The data presented should be of value to designers and should facilitate the design of airplanes incorporating satisfactory spin-recovery characteristics.

Current interactions from the one-form sector of nonlinear higher-spin equations

NASA Astrophysics Data System (ADS)

Gelfond, O. A.; Vasiliev, M. A.

2018-06-01

The form of higher-spin current interactions in the sector of one-forms is derived from the nonlinear higher-spin equations in AdS4. Quadratic corrections to higher-spin equations are shown to be independent of the phase of the parameter η = exp ⁡ iφ in the full nonlinear higher-spin equations. The current deformation resulting from the nonlinear higher-spin equations is represented in the canonical form with the minimal number of space-time derivatives. The non-zero spin-dependent coupling constants of the resulting currents are determined in terms of the higher-spin coupling constant η η bar . Our results confirm the conjecture that (anti-)self-dual nonlinear higher-spin equations result from the full system at (η = 0) η bar = 0.

Electron spin relaxation in carbon nanotubes: Dyakonov-Perel mechanism

NASA Astrophysics Data System (ADS)

Semenov, Yuriy; Zavada, John; Kim, Ki Wook

2010-03-01

The long standing problem of unaccountable short spin relaxation in carbon nanotubes (CNT) meets a disclosure in terms of curvature-mediated spin-orbital interaction that leads to spin fluctuating precession analogous to Dyakonov-Perel mechanism. Strong anisotropy imposed by arbitrary directed magnetic field has been taken into account in terms of extended Bloch equations. Especially, stationary spin current through CNT can be controlled by spin-flip processes with relaxation time as less as 150 ps, the rate of transversal polarization (i.e. decoherence) runs up to 1/(70 ps) at room temperature while spin interference of the electrons related to different valleys can be responsible for shorter spin dephasing. Dependencies of spin-relaxation parameters on magnetic field strength and orientation, CNT curvature and chirality have been analyzed.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

PubMed Central

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evelt, M.; Demidov, V. E., E-mail: demidov@uni-muenster.de; Bessonov, V.

2016-04-25

We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by themore » nonlinear scattering of the coherent spin waves from current-induced excitations.« less

Spin-tunnel investigation of the spinning characteristics of typical single-engine general aviation airplane designs. 2: Low-wing model A; tail parachute diameter and canopy distance for emergency spin recovery

NASA Technical Reports Server (NTRS)

Burk, S. M., Jr.; Bowman, J. S., Jr.; White, W. L.

1977-01-01

A spin tunnel study is reported on a scale model of a research airplane typical of low-wing, single-engine, light general aviation airplanes to determine the tail parachute diameter and canopy distance (riser length plus suspension-line length) required for energency spin recovery. Nine tail configurations were tested, resulting in a wide range of developed spin conditions, including steep spins and flat spins. The results indicate that the full-scale parachute diameter required for satisfactory recovery from the most critical conditions investigated is about 3.2 m and that the canopy distance, which was found to be critical for flat spins, should be between 4.6 and 6.1 m.